Single Mode Air-Clad Single Crystal Sapphire Optical Fiber

DOE PAGES

Hill, Cary; Homa, Dan; Yu, Zhihao; ...

2017-05-03

The observation of single mode propagation in an air-clad single crystal sapphire optical fiber at wavelengths at and above 783 nm is presented for the first time. A high-temperature wet acid etching method was used to reduce the diameter of a 10 cm length of commercially-sourced sapphire fiber from 125 micrometers to 6.5 micrometers, and far-field imaging provided modal information at intervals as the fiber diameter decreased. Modal volume was shown to decrease with decreasing diameter, and single mode behavior was observed at the minimum diameter achieved. While weakly-guiding approximations are generally inaccurate for low modal volume optical fiber withmore » high core-cladding refractive index disparity, consistency between these approximations and experimental results was observed when the effective numerical aperture was measured and substituted for the theoretical numerical aperture in weakly-guiding approximation calculations. With the demonstration of very low modal volume in sapphire at fiber diameters much larger than anticipated by legacy calculations, the resolution of sapphire fiber distributed sensors may be increased and other sensing schemes requiring very low modal volume, such as fiber Bragg gratings, may be realized in extreme environment applications.« less

Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

NASA Technical Reports Server (NTRS)

Duzik, Adam J.; Choi, Sang H.

2016-01-01

Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

Rise and fall of ferromagnetism in O-irradiated Al{sub 2}O{sub 3} single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Qiang; China Spallation Neutron Source, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan 523803; Xu, Juping

2015-06-21

In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al{sub 2}O{sub 3} single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al{sub 2}O{sub 3} crystal and form stable V{sub Al}-V{sub Al} ferromagnetic coupling at roommore » temperature.« less

Numerical simulation of the distribution of individual gas bubbles in shaped sapphire crystals

NASA Astrophysics Data System (ADS)

Borodin, A. V.; Borodin, V. A.

2017-11-01

The simulation of the effective density of individual gas bubbles in a two-phase melt, consisting of a liquid and gas bubbles, is performed using the virtual model of the thermal unit. Based on the studies, for the first time the theoretically and experimentally grounded mechanism of individual gas bubbles formation in shaped sapphire is proposed. It is shown that the change of the melt flow pattern in crucible affects greatly the bubble density at the crystallization front, and in the crystal. The obtained results allowed reducing the number of individual gas bubbles in sapphire sheets.

Properties Data for Adhesion and Surface Chemistry of Aluminum: Sapphire-Aluminum, Single-Crystal Couple

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Pohlchuck, Bobby; Whitle, Neville C.; Hector, Louis G., Jr.; Adams, Jim

1998-01-01

An investigation was conducted to examine the adhesion and surface chemistry of single-crystal aluminum in contact with single-crystal sapphire (alumina). Pull-off force (adhesion) measurements were conducted under loads of 0. I to I mN in a vacuum of 10(exp -1) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) at room temperature. An Auger electron spectroscopy analyzer incorporated directly into an adhesion-measuring vacuum system was primarily used to define the chemical nature of the surfaces before and after adhesion measurements. The surfaces were cleaned by argon ion sputtering. With a clean aluminum-clean -sapphire couple the mean value and standard deviation of pull-off forces required to separate the surfaces were 3015 and 298 micro-N, respectively. With a contaminated aluminum-clean sapphire couple these values were 231 and 241 micro-N. The presence of a contaminant film on the aluminum surface reduced adhesion by a factor of 13. Therefore, surfaces cleanliness, particularly aluminum cleanliness, played an important role in the adhesion of the aluminum-sapphire couples. Pressures on the order of 10(exp -8) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) maintained a clean aluminum surface for only a short time (less then 1 hr) but maintained a clean sapphire surface, once it was achieved, for a much longer time.

Energy output reduction and surface alteration of quartz and sapphire tips following Er:YAG laser contact irradiation for tooth enamel ablation.

PubMed

Eguro, Toru; Aoki, Akira; Maeda, Toru; Takasaki, Aristeo Atsushi; Hasegawa, Mitsuru; Ogawa, Masaaki; Suzuki, Takanori; Yonemoto, Kazuaki; Ishikawa, Isao; Izumi, Yuichi; Katsuumi, Ichiroh

2009-10-01

Despite the recent increase in application of Er:YAG laser for various dental treatments, limited information is available regarding the contact tips. This study examined the changes in energy output and surface condition of quartz and sapphire contact tips after Er:YAG laser contact irradiation for tooth enamel ablation. Ten sets of unused quartz or sapphire contact tips were employed for contact irradiation to sound enamel of extracted teeth. The teeth were irradiated with Er:YAG laser at approximately 75 J/cm(2)/pulse and 20 Hz under water spray for 60 minutes. The energy output was measured before and every 5 minutes after irradiation, and the changes in morphology and chemical composition of the contact surface were analyzed. The energy output significantly decreased with time in both tips. The energy output from the sapphire tips was generally higher on average than that of the quartz. The contact surfaces of all the used quartz tips were concave and irregular. Most of the sapphire tips also appeared rough with crater formation and fractures, except for a few tips in which a high energy output and the original smooth surface were maintained. Spots of melted tooth substances were seen attached to the surface of both tips. In contact enamel ablation, the sapphire tip appeared to be more resistant than the quartz tip. The quartz tips showed similar patterns of energy reduction and surface alteration, whereas the sapphire tips revealed a wider and more characteristic variation among tips. Lasers Surg. Med. 41:595-604, 2009. (c) 2009 Wiley-Liss, Inc.

The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.

PubMed

Huang, Jen-Ching; Weng, Yung-Jin

2014-01-01

This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model. © 2014 Wiley Periodicals, Inc.

Characterization of the Performance of Sapphire Optical Fiber in Intense Radiation Fields, when Subjected to Very High Temperatures

NASA Astrophysics Data System (ADS)

Petrie, Christian M.

The U.S. Department of Energy is interested in extending optically-based instrumentation from non-extreme environments to extremely high temperature radiation environments for the purposes of developing in-pile instrumentation. The development of in-pile instrumentation would help support the ultimate goal of understanding the behavior and predicting the performance of nuclear fuel systems at a microstructural level. Single crystal sapphire optical fibers are a promising candidate for in-pile instrumentation due to the high melting temperature and radiation hardness of sapphire. In order to extend sapphire fiber-based optical instrumentation to high temperature radiation environments, the ability of sapphire fibers to adequately transmit light in such an environment must first be demonstrated. Broadband optical transmission measurements of sapphire optical fibers were made in-situ as the sapphire fibers were heated and/or irradiated. The damage processes in sapphire fibers were also modeled from the primary knock-on event from energetic neutrons to the resulting damage cascade in order to predict the formation of stable defects that ultimately determine the resulting change in optical properties. Sapphire optical fibers were shown to withstand temperatures as high as 1300 °C with minimal increases in optical attenuation. A broad absorption band was observed to grow over time without reaching a dynamic equilibrium when the sapphire fiber was heated at temperatures of 1400 °C and above. The growth of this absorption band limits the use of sapphire optical fibers, at least in air, to temperatures of 1300 °C and below. Irradiation of sapphire fibers with gamma rays caused saturation of a defect center located below 500 nm, and extending as far as ~1000 nm, with little effect on the transmission at 1300 and 1550 nm. Increasing temperature during gamma irradiation generally reduced the added attenuation. Reactor irradiation of sapphire fibers caused an initial rapid

The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

NASA Astrophysics Data System (ADS)

Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

2018-03-01

Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

PubMed

Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

2016-11-21

The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators

DOE PAGES

Asadchikov, Victor E.; Butashin, Andrey V.; Buzmakov, Alexey V.; ...

2016-03-22

We report on the growth and characterization of several sapphire single crystals for the purpose of x-ray optics applications. Structural defects were studied by means of laboratory double-crystal X-ray diffractometry and white beam synchrotron-radiation topography. The investigations confirmed that the main defect types are dislocations. The best quality crystal was grown using the Kyropoulos technique with a dislocation density of 10 2-10 3 cm -2 and a small area with approximately 2*2 mm 2 did not show dislocation contrast in many reflections and has suitable quality for application as a backscattering monochromator. As a result, a clear correlation between growthmore » rate and dislocation density is observed, though growth rate is not the only parameter impacting the quality.« less

Control of melt-crystal interface shape during sapphire crystal growth by heat exchanger method

NASA Astrophysics Data System (ADS)

Wu, Ming; Liu, Lijun; Ma, Wencheng

2017-09-01

We numerically investigate the melt-crystal interface shape during the early stage of the solidification process when the crystal diameter increases. The contact angle between the melt-crystal interface and the crucible bottom wall is found obtuse during this stage, which is unfavorable for the crystal quality. We found that the obtuse contact angle is caused by the thermal resistance difference between the sapphire crystal and melt as well as the insufficient cooling effect of the crucible bottom. Two approaches are proposed to suppress the obtuse contact angle. The first approach is to increase the emissivity of the outer surface of crucible bottom. The second approach is to install a heat shield near the crucible bottom. The reduction of the emissivity of the heat shield is also favorable for the suppression of the obtuse contact angle. Compared with the increase of the emissivity of the crucible bottom, the installation of a heat shield is a more effective approach to prevent the appearance of an obtuse contact angle for the sake of reliability since a molybdenum heat shield can be reused and will not induce other impurities.

Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

NASA Astrophysics Data System (ADS)

Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.

2015-01-01

To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

Design and analysis of large-core single-mode windmill single crystal sapphire optical fiber

DOE PAGES

Cheng, Yujie; Hill, Cary; Liu, Bo; ...

2016-06-01

We present a large-core single-mode “windmill” single crystal sapphire optical fiber (SCSF) design, which exhibits single-mode operation by stripping off the higher-order modes (HOMs) while maintaining the fundamental mode. The “windmill” SCSF design was analyzed using the finite element analysis method, in which all the HOMs are leaky. The numerical simulation results show single-mode operation in the spectral range from 0.4 to 2 μm in the windmill SCSF, with an effective core diameter as large as 14 μm. Such fiber is expected to improve the performance of many of the current sapphire fiber optic sensor structures.

Evolution of the sapphire industry: Rubicon Technology and Gavish

NASA Astrophysics Data System (ADS)

Harris, Daniel C.

2009-05-01

A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

Temperature dependence of Ti:Sapphire fluorescence spectra for the design of cryogenic cooled Ti:Sapphire CPA laser.

PubMed

Burton, Harry; Debardelaben, Christopher; Amir, Wafa; Planchon, Thomas A

2017-03-20

The fluorescence spectra of titanium doped sapphire (Ti:Sapphire) crystals were measured for temperature ranging from 300K to 77K. The resulting gain cross-section line shapes were calculated and used in a three-dimensional amplification model to illustrate the importance of the precise knowledge of these fluorescence spectra for the design of cryogenic cooled Ti:Sapphire based chirped-pulse laser amplifiers.

The study of optical property of sapphire irradiated with 73 MeV Ca ions

NASA Astrophysics Data System (ADS)

Yang, Yitao; Zhang, Chonghong; Song, Yin; Gou, Jie; Liu, Juan; Xian, Yongqiang

2015-12-01

Single crystals of sapphire were irradiated with 73 MeV Ca ions at room temperature to the fluences of 0.1, 0.5 and 1.0 × 1014 ions/cm2. Optical properties of these samples were characterized by ultraviolet-visible spectrometry (UV-VIS) and fluorescence spectrometer (PL). In UV-VIS spectra, it is observed the absorbance bands from oxygen single vacancy (F and F+ color centers) and vacancy pair (F2+ and F22+ color centers). The oxygen single vacancy initially increases rapidly and then does not increase in the fluence range from 0.1 to 0.5 × 1014 ions/cm2. When the fluence is higher than 0.5 × 1014 ions/cm2, oxygen single vacancy starts to increase again. Oxygen vacancy pair increases monotonically with fluence for all irradiated samples. The variation of oxygen single vacancy with fluence is probably associated with the recombination of oxygen vacancies with Al interstitials and complex defect formation (such as vacancy clusters). From PL spectra, two emission bands around 3.1 and 2.34 eV are observed. The PL intensity of the emission band around 3.1 eV decreases for all the irradiated samples. For the emission band around 2.34 eV, the PL intensity initially decreases, and then increases with fluence. Meanwhile, the peak position of the emission band around 2.34 eV gradually shifts to high energy direction with increase of fluence. The decrease of the intensity of the emission bands around 3.1 and 2.34 eV could be induced by stress from the damage layer in the irradiated samples. The shift of peak position for the emission band around 2.34 eV is induced by the appearance of emission band from Al interstitials.

High performance sapphire windows

NASA Technical Reports Server (NTRS)

Bates, Stephen C.; Liou, Larry

1993-01-01

High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

High performance sapphire windows

NASA Astrophysics Data System (ADS)

Bates, Stephen C.; Liou, Larry

1993-02-01

High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

Rocking curve imaging of high quality sapphire crystals in backscattering geometry

DOE PAGES

Jafari, A.; European Synchrotron Radiation Facility; Univ. of Liege,; ...

2017-01-23

Here, we report on the characterization of high quality sapphire single crystals suitable for high-resolution X-ray optics at high energy. Investigations using rocking curve imaging reveal the crystals to be of uniformly good quality at the level of ~10 -4 in lattice parameter variations, deltad/d. But, investigations using backscattering rocking curve imaging with lattice spacing resolution of deltad/d ~ 5.10 -8 shows very diverse quality maps for all crystals. Our results highlight nearly ideal areas with edge length of 0.2-0.5 mm in most crystals, but a comparison of the back re ection peak positions shows that even neighboring ideal areasmore » exhibit a relative difference in the lattice parameters on the order of deltad/d = 10-20.10 -8; this is several times larger than the rocking curve width. Furthermore, the stress-strain analysis suggests that an extremely stringent limit on the strain at a level of ~100 kPa in the growth process is required in order to produce crystals with large areas of the quality required for X-ray optics at high energy.« less

Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2016-01-01

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Simulations of thermal lensing of a Ti:Sapphire crystal end-pumped with high average power

NASA Astrophysics Data System (ADS)

Wagner, Gerd; Shiler, Max; Wulfmeyer, Volker

2005-10-01

A detailed 3-dimensional calculation of the temperature field of a laser crystal pumped with high average power is presented. The pump configuration, the anisotropy of a Brewster-angle-cut Ti:Sapphire crystal, and the temperature dependence of the thermal conductivity are taken into account. The corresponding focal length of the thermal lens is calculated for pump levels up to 100 W. This refined thermal model is the basis for a optimized resonator design of a high-average power differential absorption lidar system transmitter.

Simulations of thermal lensing of a Ti:Sapphire crystal end-pumped with high average power.

PubMed

Wagner, Gerd; Shiler, Max; Wulfmeyer, Volker

2005-10-03

A detailed 3-dimensional calculation of the temperature field of a laser crystal pumped with high average power is presented. The pump configuration, the anisotropy of a Brewster-angle-cut Ti:Sapphire crystal, and the temperature dependence of the thermal conductivity are taken into account. The corresponding focal length of the thermal lens is calculated for pump levels up to 100 W. This refined thermal model is the basis for a optimized resonator design of a high-average power differential absorption lidar system transmitter.

Petrogenesis of alkaline basalt-hosted sapphire megacrysts. Petrological and geochemical investigations of in situ sapphire occurrences from the Siebengebirge Volcanic Field, Germany

NASA Astrophysics Data System (ADS)

Baldwin, L. C.; Tomaschek, F.; Ballhaus, C.; Gerdes, A.; Fonseca, R. O. C.; Wirth, R.; Geisler, T.; Nagel, T.

2017-06-01

Megacrystic sapphires are frequently associated with alkaline basalts, most notably in Asia and Australia, although basalt is not generally normative in corundum. Most of these sapphire occurrences are located in alluvial or eluvial deposits, making it difficult to study the enigmatic relationship between the sapphires and their host rocks. Here, we present detailed petrological and geochemical investigations of in situ megacrystic sapphires within alkaline basalts from the Cenozoic Siebengebirge Volcanic Field (SVF) in Germany. Markedly, the sapphires show several micrometer thick spinel coronas at the contact with the host basalt, indicating chemical disequilibrium between the sapphire and the basaltic melt, supporting a xenogenetic relationship. However, in situ U-Pb dating of a Columbite Group inclusion within one Siebengebirge sapphire using laser ablation-inductively coupled plasma-mass spectrometry (LA-ICP-MS) indicates a close genetic relationship between sapphire crystallization and alkaline mafic volcanism in the SVF. The syngenetic mineral inclusion suite including carbonates, members of the Pyrochlore, Betafite and Columbite Groupe minerals, as well as a high abundance of HFSE and of gaseous low-density CO2 inclusions support a parentage of a highly evolved, MgO and FeO deficient carbonatitic melt. We identified CO2 to be the link between alkaline basaltic volcanism and the xenocrystic sapphires. Only alkaline volcanic suites can build up enough CO2 in this magma chamber upon fractionation so that at high degrees of fractionation a carbonatitic melt exsolves which in turn can crystallize sapphires.

Detection of beryllium treatment of natural sapphires by NRA

NASA Astrophysics Data System (ADS)

Gutiérrez, P. C.; Ynsa, M.-D.; Climent-Font, A.; Calligaro, T.

2010-06-01

Since the 1990's, artificial treatment of natural sapphires (Al 2O 3 crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of μg/g of beryllium in Al 2O 3 crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-μm diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction 9Be(α, nγ) 12C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt γ-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt γ-ray produced during irradiation by the aluminium of the sapphire matrix through the 27Al(α, pγ) 30Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required μg/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 μC, beryllium concentrations from 5 to 16 μg/g have been measured in the samples, with a detection limit of 1 μg/g.

Surface-mount sapphire interferometric temperature sensor.

PubMed

Zhu, Yizheng; Wang, Anbo

2006-08-20

A fiber-optic high-temperature sensor is demonstrated by bonding a 45 degrees -polished single-crystal sapphire fiber on the surface of a sapphire wafer, whose optical thickness is temperature dependent and measured by white-light interferometry. A novel adhesive-free coupling between the silica and sapphire fibers is achieved by fusion splicing, and its performance is characterized. The sensor's interference signal is investigated for its dependence on angular alignment between the fiber and the wafer. A prototype sensor is tested to 1,170 degrees C with a resolution of 0.4 degrees C, demonstrating excellent potential for high-temperature measurement.

Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates.

PubMed

Xu, Zai-Quan; Zhang, Yupeng; Lin, Shenghuang; Zheng, Changxi; Zhong, Yu Lin; Xia, Xue; Li, Zhipeng; Sophia, Ponraj Joice; Fuhrer, Michael S; Cheng, Yi-Bing; Bao, Qiaoliang

2015-06-23

Two-dimensional layered transition metal dichalcogenides (TMDs) show intriguing potential for optoelectronic devices due to their exotic electronic and optical properties. Only a few efforts have been dedicated to large-area growth of TMDs. Practical applications will require improving the efficiency and reducing the cost of production, through (1) new growth methods to produce large size TMD monolayer with less-stringent conditions, and (2) nondestructive transfer techniques that enable multiple reuse of growth substrate. In this work, we report to employ atmospheric pressure chemical vapor deposition (APCVD) for the synthesis of large size (>100 μm) single crystals of atomically thin tungsten disulfide (WS2), a member of TMD family, on sapphire substrate. More importantly, we demonstrate a polystyrene (PS) mediated delamination process via capillary force in water which reduces the etching time in base solution and imposes only minor damage to the sapphire substrate. The transferred WS2 flakes are of excellent continuity and exhibit comparable electron mobility after several growth cycles on the reused sapphire substrate. Interestingly, the photoluminescence emission from WS2 grown on the recycled sapphire is much higher than that on fresh sapphire, possibly due to p-type doping of monolayer WS2 flakes by a thin layer of water intercalated at the atomic steps of the recycled sapphire substrate. The growth and transfer techniques described here are expected to be applicable to other atomically thin TMD materials.

Advances in sapphire optical fiber sensors

NASA Technical Reports Server (NTRS)

Wang, Anbo; Wang, George Z.; Gollapudi, Sridhar; May, Russell G.; Murphy, Kent A.; Claus, Richard O.

1993-01-01

We describe the development and testing of two sapphire fiber sensor designs intended for use in high temperature environments. The first is a birefringence-balanced polarimetric sapphire fiber sensor. In this sensor, two single crystal sapphire rods, acting as the birefringence sensing element, are connected to each other in such a way that the slow axis of the first rod is aligned along with the fast axis of the second rod, and the fast axis of the first rod is along the slow axis of the second rod. This sensor has been demonstrated for measurement of temperature up to 1500 C. The second is a sapphire-fiber-based intrinsic interferometric sensor. In this sensor, a length of uncoated, unclad, structural-graded multimode sapphire fiber is fusion spliced to a singlemode silica fiber to form a Fabry-Perot cavity. The reflections from the silica-to-sapphire fiber splice and the free endface of the sapphire fiber give rise to the interfering fringe output. This sensor has been demonstrated for the measurement of temperature above 1510 C, and a resolution of 0.1 C has been obtained.

Characterization of AFB sapphire single crystal composites for infrared window application

NASA Astrophysics Data System (ADS)

Lee, H.-C.; Meissner, H. E.

2007-04-01

Next generation weapons platforms may require 30" x 30" sapphire windows. Since these sizes exceed what can be manufactured directly, a concept is proposed and experimental data are furnished in this report on the viability of increasing the window dimensions by Adhesive-Free-Bonding (AFB®) of smaller starting components by their edges. The bonding scheme has been evaluated for single crystal sapphire but is expected to also work equally well for other IR window materials. The bonding mechanism is explained with Van der Waals theory of attractive forces and confirmed experimentally by applying the bending plate theory. The gap at the interface between two components is deduced from the measured roughness of the polished surfaces that are brought into optical contact and subsequently heat-treated, and is estimated to be about 2 Å rms. Stress relief at AFB® interfaces has been established. Experimental data of flexural strength determined by four-point bending at room temperature is reported. The data indicates that AFB® composite specimens and equivalently prepared blank samples fracture at statistically same loads under standardized testing conditions. Failure of composites has not been observed at the interface and only at random flaws that are a result of sample preparation.

Raman scattering in single-crystal sapphire at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thapa, Juddha; Liu, Bo; Woodruff, Steven D.

Sapphire is a widely used high-temperature material and this work presents thorough characterization of all the measurable Raman scattering modes in sapphire and their temperature dependencies. Here, Raman scattering in bulk sapphire rods is measured from room temperature to 1081 °C and is illustrated as a method of noncontact temperature measurement. A single-line argon ion laser at 488 nm was used to excite the sapphire rods inside a cylindrical furnace. All the anti-Stokes peaks (or lines) were observable through the entire temperature range of interest, while Stokes peaks were observable until they were obscured by background thermal emission. Temperature measurementsmore » were found to be most reliable for A 1g and E g modes using the peaks at ±418, ±379, +578, +645, and, +750 cm -1 (+ and – are designated for Stokes and anti-Stokes peaks respectively). The 418 cm -1 peak was found to be the most intense peak. The temperature dependence of peak position, peak width, and peak area of the ±418 and ±379 peaks is presented. For +578, +645 and +750, the temperature dependence of peak position is presented. The peaks’ spectral positions provide the most precise temperature information within the experimental temperature range. Finally, the resultant temperature calibration curves are given, which indicate that sapphire can be used in high-temperature Raman thermometry with an accuracy of about 1.38°C average standard deviation over the entire >1000°C temperature range.« less

Raman scattering in single-crystal sapphire at elevated temperatures

DOE PAGES

Thapa, Juddha; Liu, Bo; Woodruff, Steven D.; ...

2017-10-25

Sapphire is a widely used high-temperature material and this work presents thorough characterization of all the measurable Raman scattering modes in sapphire and their temperature dependencies. Here, Raman scattering in bulk sapphire rods is measured from room temperature to 1081 °C and is illustrated as a method of noncontact temperature measurement. A single-line argon ion laser at 488 nm was used to excite the sapphire rods inside a cylindrical furnace. All the anti-Stokes peaks (or lines) were observable through the entire temperature range of interest, while Stokes peaks were observable until they were obscured by background thermal emission. Temperature measurementsmore » were found to be most reliable for A 1g and E g modes using the peaks at ±418, ±379, +578, +645, and, +750 cm -1 (+ and – are designated for Stokes and anti-Stokes peaks respectively). The 418 cm -1 peak was found to be the most intense peak. The temperature dependence of peak position, peak width, and peak area of the ±418 and ±379 peaks is presented. For +578, +645 and +750, the temperature dependence of peak position is presented. The peaks’ spectral positions provide the most precise temperature information within the experimental temperature range. Finally, the resultant temperature calibration curves are given, which indicate that sapphire can be used in high-temperature Raman thermometry with an accuracy of about 1.38°C average standard deviation over the entire >1000°C temperature range.« less

Membrane Protein Crystallization Using Laser Irradiation

NASA Astrophysics Data System (ADS)

Adachi, Hiroaki; Murakami, Satoshi; Niino, Ai; Matsumura, Hiroyoshi; Takano, Kazufumi; Inoue, Tsuyoshi; Mori, Yusuke; Yamaguchi, Akihito; Sasaki, Takatomo

2004-10-01

We demonstrate the crystallization of a membrane protein using femtosecond laser irradiation. This method, which we call the laser irradiated growth technique (LIGHT), is useful for producing AcrB crystals in a solution of low supersaturation range. LIGHT is characterized by reduced nucleation times. This feature is important for crystallizing membrane proteins because of their labile properties when solubilized as protein-detergent micelles. Using LIGHT, high-quality crystals of a membrane transporter protein, AcrB, were obtained. The resulting crystals were found to be of sufficiently high resolution for X-ray diffraction. The results reported here indicate that LIGHT is a powerful tool for membrane protein crystallization, as well as for the growth of soluble proteins.

Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vetrov, V. N., E-mail: vasvetrov@mail.ru; Ignatenkov, B. A.

2013-05-15

The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

Method of Fabricating Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

NASA Technical Reports Server (NTRS)

Choi, Sang Hyouk (Inventor); Park, Yeonjoon (Inventor)

2017-01-01

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Chemical etching mechanism and properties of microstructures in sapphire modified by femtosecond laser

NASA Astrophysics Data System (ADS)

Liu, Manyu; Hu, Youwang; Sun, Xiaoyan; Wang, Cong; Zhou, Jianying; Dong, Xinran; Yin, Kai; Chu, Dongkai; Duan, Ji'an

2017-01-01

Sapphire, with extremely high hardness, high-temperature stability and wear resistance, often corroded in molten KOH at 300 °C after processing. The fabrication of microstructures on sapphire substrate performed by femtosecond laser irradiation combined with KOH solution chemical etching at room temperature is presented. It is found that this method reduces the harsh requirements of sapphire corrosion. After femtosecond irradiation, the sapphire has a high corrosion speed at room temperature. Through the analysis of Raman spectrum and XRD spectrum, a novel insight of femtosecond laser interaction with sapphire (α-Al2O3) is proposed. Results indicated that grooves on sapphire surface were formed by the lasers ablation removal, and the groove surface was modified in a certain depth. The modified area of the groove surface was changed from α-Al2O3 to γ-Al2O3. In addition, the impacts of three experimental parameters, laser power, scanning velocities and etching time, on the width and depth of microstructures are investigated, respectively. The modified area dimension is about 2 μm within limits power and speed. This work could fabricate high-quality arbitrary microstructures and enhance the performance of sapphire processing.

Removal of Lattice Imperfections that Impact the Optical Quality of Ti:Sapphire using Advanced Magnetorheological Finishing Techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menapace, J A; Schaffers, K I; Bayramian, A J

2008-02-26

Advanced magnetorheological finishing (MRF) techniques have been applied to Ti:sapphire crystals to compensate for sub-millimeter lattice distortions that occur during the crystal growing process. Precise optical corrections are made by imprinting topographical structure onto the crystal surfaces to cancel out the effects of the lattice distortion in the transmitted wavefront. This novel technique significantly improves the optical quality for crystals of this type and sets the stage for increasing the availability of high-quality large-aperture sapphire and Ti:sapphire optics in critical applications.

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

NASA Technical Reports Server (NTRS)

Choi, Sang; King, Glen; Park, Yeonjoon

2009-01-01

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

Tridimensional morphology and kinetics of etch pit on the {l_brace}0 0 0 1{r_brace} plane of sapphire crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Lunyong; Sun Jianfei, E-mail: jfsun_hit@263.net; Zuo Hongbo

2012-08-15

The tridimensional morphology and etching kinetics of the etch pit on the C-{l_brace}0 0 0 1{r_brace} plane of sapphire crystal ({alpha}-Al{sub 2}O{sub 3}) in molten KOH were studied experimentally. It was shown that the etch pit takes on tridimensional morphologies with triangular symmetry same as the symmetric property of the sapphire crystal. Pits like centric and eccentric triangular pyramid as well as hexagonal pyramid were observed, but the latter is less in density. In-depth analyses show the side walls of the etch pits belong to the {l_brace}1 1{sup Macron} 0 2{sup Macron }{r_brace} family, and the triangular pit contains edgesmore » full composed by Al{sup 3+} ions on the etching surface so it is more stable than the hexagonal pit since its edges on the etching surface contains Al{sup 2+} ions. The etch pits developed in a manner of kinematic wave by the step moving with constant speed, which is controlled by the chemical reaction with activation energy of 96.6 kJ/mol between Al{sub 2}O{sub 3} and KOH. - Graphical abstract: Schematic showing the atomic configuration of the predicted side walls of regular triangular pyramid shaped etch pit on the C-{l_brace}0 0 0 1{r_brace} plane of sapphire crystal. Highlights: Black-Right-Pointing-Pointer Observed the tridimensional morphology of etch pits. Black-Right-Pointing-Pointer Figured out the atomic configuration origin of the etch pits. Black-Right-Pointing-Pointer Quantitatively determined the etch rates of the etch pits.« less

Ti:sapphire - A theoretical assessment for its spectroscopy

NASA Astrophysics Data System (ADS)

Da Silva, A.; Boschetto, D.; Rax, J. M.; Chériaux, G.

2017-03-01

This article tries to theoretically compute the stimulated emission cross-sections when we know the oscillator strength of a broad material class (dielectric crystals hosting metal-transition impurity atoms). We apply the present approach to Ti:sapphire and check it by computing some emission cross-section curves for both π and σ polarizations. We also set a relationship between oscillator strength and radiative lifetime. Such an approach will allow future parametric studies for Ti:sapphire spectroscopic properties.

Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

NASA Astrophysics Data System (ADS)

Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

2018-03-01

The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Akazawa, Housei; Ueno, Yuko

2014-10-01

We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

A Century of Sapphire Crystal Growth

DTIC Science & Technology

2004-05-17

should be aware that notwithstanding any other provision of law , no person shall be subject to a penalty for failing to comply with a collection of...and ruby were oxides of the elements aluminum and silicon.1 In 1817, J. L. Gay- Lussac found that pure aluminum oxide (also called alumina) could...thought to consist of Al2O3 and SiO2 •1817: Gay- Lussac : •1840: Rose: Found SiO2 in sapphire is from agate mortar used for grinding •1837-72: Gaudin

Strain Evolution of Annealed Hydrogen-Implanted (0001) Sapphire

NASA Astrophysics Data System (ADS)

Wong, Christine Megan

Exfoliation is a technique used to remove a thin, uniform layer of material from the bulk that involves the annealing of hydrogen ion-implanted materials in order to initiate defect nucleation and growth leading to guided crack propagation. This study presents an investigation into the annealing process required to initiate blistering (an essential precursor to exfoliation) in (0001) sapphire implanted at room temperature with hydrogen ions. Triple axis x-ray diffraction was used to characterize the evolution of the implanted layer for single crystal (0001) sapphire substrates implanted at room temperature at 360 keV with either a 5x1016 cm -2 or 8x1016 cm-2 dose of hydrogen ions. A simulation of the ion distribution in TRIM estimated that the projected range and thickness of the implanted layer for both doses was approximately 2.2 mum. Following implantation, the implanted sapphire was annealed using a two-step annealing procedure. The first step was performed at a lower temperature, ideally to nucleate and coarsen defects. Temperatures investigated ranged from 550 - 650 °C. The second step was performed at a higher temperature (800 °C) to induce further defect coarsening and surface blistering. After all annealing steps, triple axis o/2theta and o scans were taken to observe any changes in the diffraction profile - namely, any reduction in the amplitude and shift in the location of the fringes associated with strain in the crystal - which would correlate with defect growth and nucleation. It was found that significant strain fringe reduction first occurred after annealing at 650 °C for 8 hours for both doses; however, it was not clear whether or not this strain reduction was due primarily to hydrogen diffusion or to recovery of other defects induced during the ion implantation. The o/2theta curves were then fit using Bede RADS in order to quantify the strain within the crystal and confirm the reduction of the strained layer within the crystal. Finally

Power amplification for petawatt Ti: Sapphire lasers: New strategies for high fluence pumping

NASA Astrophysics Data System (ADS)

Canova, F.; Chambaret, J.-P.

2006-06-01

One of the major bottlenecks when we pump large Ti:Sapphire crystals, to reach Petawatt level laser amplification, is the careful control of the spatial energy distribution of Nd:Glass pump lasers. Commercially available nanosecond Nd:Glass and Nd:YAG lasers exhibit poor spatial profile quality especially in the near and in the intermediate field, which can lead to local hot spots, responsible of damages in crystals, and parasitic transverse lasing enhancement, strongly dependent on the profile of the pump beam . For these reasons, it is mandatory to keep the pump beam intensity profile as flat as possible on the pumped crystal. To guarantee the best pumping conditions we are investigating the combined use of DOE (diffractive optical elements) and optical smoothing techniques. In parallel we are starting a study on laser induced damages mechanisms in crystal. With DOE and microlens arrays we plan to guarantee to the beam a supergaussian shape. Simulation and first experiments with both optical systems show that a flat top spatial profile with less than 10% fluctuations and a 8th order supergaussian is possible with the present technology.Optical smoothing will keep the beam free of hot spots. We especially focused on the smoothing techniques involving optical fibers. This is the first time to our knowledge that this technique is applied to the pumping beams for Ti:Sapphire systems. A deep study of laser-crystal interaction will allow us to fully understand the damages created by hot spots. The knowledge of the phenomena involved in laser damages on Ti:Sapphire is mandatory to control the pumping processes and thresholds. In conclusion, mixing the advantages of these different approaches to overcome this bottleneck will allow us to amplify in a safety way femtosecond laser beams to the Petawatt level using Ti:Sapphire crystals.

Electron Beam "Writes" Silicon On Sapphire

NASA Technical Reports Server (NTRS)

Heinemann, Klaus

1988-01-01

Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.

Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

NASA Astrophysics Data System (ADS)

Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

2017-04-01

ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

Emission from Crystals Irradiated with a Beam of Runaway Electrons

NASA Astrophysics Data System (ADS)

Buranchenko, A. G.; Tarasenko, V. F.; Beloplotov, D. V.; Baksht, E. Kh.

2018-01-01

An investigation of the spectral and amplitude-temporal characteristics of emission from different crystals, promising in terms of their application as detectors of runaway electrons, is performed. This emission is excited by subnanosecond electron beams generated in a gas diode. It is found out that at the electron energies of tens-hundreds of kiloelectronvolts, the main contribution into the emission from CsI, ZnS, type IIa artificial and natural diamonds, sapphire, CaF2, ZrO2, Ga2O3, CaCO3, CdS, and ZnSe crystals comes from the cathodoluminescence; the radiation pulse duration depends on the crystal used and sufficiently exceeds the Cherenkov radiation pulse duration. It is demonstrated that the latter radiation exhibits low intensity and can be detected in the short-wave region of the spectrum in the cases where a monochromator and a high-sensitivity photomultiplier tube (PMT) are used.

Crystal plasticity modeling of irradiation growth in Zircaloy-2

NASA Astrophysics Data System (ADS)

Patra, Anirban; Tomé, Carlos N.; Golubov, Stanislav I.

2017-08-01

A physically based reaction-diffusion model is implemented in the visco-plastic self-consistent (VPSC) crystal plasticity framework to simulate irradiation growth in hcp Zr and its alloys. The reaction-diffusion model accounts for the defects produced by the cascade of displaced atoms, their diffusion to lattice sinks and the contribution to crystallographic strain at the level of single crystals. The VPSC framework accounts for intergranular interactions and irradiation creep, and calculates the strain in the polycrystalline ensemble. A novel scheme is proposed to model the simultaneous evolution of both, number density and radius, of irradiation-induced dislocation loops directly from experimental data of dislocation density evolution during irradiation. This framework is used to predict the irradiation growth behaviour of cold-worked Zircaloy-2 and trends compared to available experimental data. The role of internal stresses in inducing irradiation creep is discussed. Effects of grain size, texture and external stress on the coupled irradiation growth and creep behaviour are also studied and compared with available experimental data.

Characterisation of irradiation-induced defects in ZnO single crystals

NASA Astrophysics Data System (ADS)

Prochazka, I.; Cizek, J.; Lukac, F.; Melikhova, O.; Valenta, J.; Havranek, V.; Anwand, W.; Skuratov, V. A.; Strukova, T. S.

2016-01-01

Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3×1012 to 1×1014 cm-2. The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.

High-temperature effects on the light transmission through sapphire optical fiber

DOE PAGES

Wilson, Brandon A.; Petrie, Christian M.; Blue, Thomas E.

2018-03-13

Single crystal sapphire optical fiber was tested at high temperatures (1500°C) to determine its suitability for optical instrumentation in high-temperature environments. Broadband light transmission (450-2300 nm) through sapphire fiber was measured as a function of temperature as a test of the fiber's ability to survive and operate in high-temperature environments. Upon heating sapphire fiber to 1400°C, large amounts of light attenuation were measured across the entire range of light wavelengths that were tested. SEM and TEM images of the heated sapphire fiber indicated that a layer had formed at the surface of the fiber, most likely due to a chemicalmore » change at high temperatures. The microscopy results suggest that the surface layer may be in the form of aluminum hydroxide. Subsequent tests of sapphire fiber in an inert atmosphere showed minimal light attenuation at high temperatures along with the elimination of any surface layers on the fiber, indicating that the air atmosphere is indeed responsible for the increased attenuation and surface layer formation at high temperatures.« less

High-temperature effects on the light transmission through sapphire optical fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilson, Brandon A.; Petrie, Christian M.; Blue, Thomas E.

Single crystal sapphire optical fiber was tested at high temperatures (1500°C) to determine its suitability for optical instrumentation in high-temperature environments. Broadband light transmission (450-2300 nm) through sapphire fiber was measured as a function of temperature as a test of the fiber's ability to survive and operate in high-temperature environments. Upon heating sapphire fiber to 1400°C, large amounts of light attenuation were measured across the entire range of light wavelengths that were tested. SEM and TEM images of the heated sapphire fiber indicated that a layer had formed at the surface of the fiber, most likely due to a chemicalmore » change at high temperatures. The microscopy results suggest that the surface layer may be in the form of aluminum hydroxide. Subsequent tests of sapphire fiber in an inert atmosphere showed minimal light attenuation at high temperatures along with the elimination of any surface layers on the fiber, indicating that the air atmosphere is indeed responsible for the increased attenuation and surface layer formation at high temperatures.« less

Titanium-doped sapphire laser research and design study

NASA Technical Reports Server (NTRS)

Moulton, Peter F.

1987-01-01

Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.

Effect of gamma-ray irradiation on isothermal crystallization of biodegradable poly(ethylene succinate)

NASA Astrophysics Data System (ADS)

Chuang, Yu-Fan; Chou, Yu-Cheng; Yang, Fuqian; Lee, Sanboh

2016-09-01

The effects of gamma-ray irradiation on the isothermal crystallization of biodegradable poly(ethylene succinate) (PESu) and the growth behavior of PESu spherulites have been studied by differential scanning calorimetry and polarized optical microscopy. The irradiation doses used in the study are 0, 200, 400, and 600 kGy. The kinetic parameters for the isothermal crystallization have been determined, using the Avrami relationship. The nucleation constants and activation energy for the growth of the PESu spherulites have been analyzed, using the Lauritzen-Hoffman growth theory. Triple melting points have been observed for all the irradiated PESu. The gamma irradiation has no observable effect on the Avrami exponent, and the composite rate constant increases first with the increase of the crystallization temperature, reaches maximum at the crystallization temperature of 35 °C, and then decreases with the increase of the crystallization temperature for both the non-irradiated and irradiated PESu. There exists a transition of the growth of the PESu spherulites from regime II to regime III. Both the nucleation constants and activation energy increase with increasing the irradiation dose. The gamma irradiation increases the energy barrier for the migration of polymer chains.

Influence of Er:YAG and Ti:sapphire laser irradiation on the microtensile bond strength of several adhesives to dentin.

PubMed

Portillo, M; Lorenzo, M C; Moreno, P; García, A; Montero, J; Ceballos, L; Fuentes, M V; Albaladejo, A

2015-02-01

The aim of the present study was to evaluate the influence of erbium:yttrium-aluminum-garnet (Er:YAG) and Ti:sapphire laser irradiation on the microtensile bond strength (MTBS) of three different adhesive systems to dentin. Flat dentin surfaces from 27 molars were divided into three groups according to laser irradiation: control, Er:YAG (2,940 nm, 100 μs, 2.7 W, 9 Hz) and Ti:sapphire laser (795 nm, 120 fs, 1 W, 1 kHz). Each group was divided into three subgroups according to the adhesive system used: two-step total-etching adhesive (Adper Scotchbond 1 XT, from now on XT), two-step self-etching adhesive (Clearfil SE Bond, from now on CSE), and all-in-one self-etching adhesive (Optibond All-in-One, from now on OAO). After 24 h of water storage, beams of section at 1 mm(2) were longitudinally cut from the samples. Each beam underwent traction test in an Instron machine. Fifteen polished dentin specimens were used for the surface morphology analysis by scanning electron microscopy (SEM). Failure modes of representative debonded microbars were SEM-assessed. Data were analyzed by ANOVA, chi-square test, and multiple linear regression (p < 0.05). In the control group, XT obtained higher MTBS than that of laser groups that performed equally. CSE showed higher MTBS without laser than that with laser groups, where Er:YAG attained higher MTBS than ultrashort laser. When OAO was used, MTBS values were equal in the three treatments. CSE obtained the highest MTBS regardless of the surface treatment applied. The Er:YAG and ultrashort laser irradiation reduce the bonding effectiveness when a two-step total-etching adhesive or a two-step self-etching adhesive are used and do not affect their effectiveness when an all-in-one self-etching adhesive is applied.

Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

NASA Astrophysics Data System (ADS)

Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wook Jin

2018-01-01

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. In this study, the evolution of thermally induced stress in sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model that simplified the real Bridgman process. A vertical Bridgman process of cylindrical sapphire crystal with a diameter of 50 mm was considered for the model. The solidification history effect during the growth was modeled by the quite element technique. The effects of temperature gradient, seeding interface shape and seeding position on the thermal stress during the process were discussed based on the finite element analysis results.

Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blue, Thomas; Windl, Wolfgang

The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

Cladding waveguide splitters fabricated by femtosecond laser inscription in Ti:Sapphire crystal

NASA Astrophysics Data System (ADS)

Ren, Yingying; Zhang, Limu; Xing, Hongguang; Romero, Carolina; Vázquez de Aldana, Javier R.; Chen, Feng

2018-07-01

Highly-compact devices capable of beam splitting are intriguing for a broad range of photonic applications. In this work, we report on the fabrication of optical waveguide splitters with rectangular cladding geometry in a Ti:Sapphire crystal by femtosecond laser inscription. Y-splitters are fabricated with 30 μm × 15 μm and 50 μm × 25 μm input ends, corresponding to two 15 μm × 15 μm and 25 μm × 25 μm output ends, respectively. The full branching angle θ between the two output arms are changing from 0.5° to 2°. The performances of the splitters are characterized at 632.8 nm and 1064 nm, showing very good properties including symmetrical output ends, single-mode guidance, equalized splitting ratios, all-angle-polarization light transmission and intact luminescence features in the waveguide cores. The realization of these waveguide splitters with good performances demonstrates the potential of such promising devices in complex monolithic photonic circuits and active optical devices such as miniature tunable lasers.

Effect of power history on the shape and the thermal stress of a large sapphire crystal during the Kyropoulos process

NASA Astrophysics Data System (ADS)

Nguyen, Tran Phu; Chuang, Hsiao-Tsun; Chen, Jyh-Chen; Hu, Chieh

2018-02-01

In this study, the effect of the power history on the shape of a sapphire crystal and the thermal stress during the Kyropoulos process are numerically investigated. The simulation results show that the thermal stress is strongly dependent on the power history. The thermal stress distributions in the crystal for all growth stages produced with different power histories are also studied. The results show that high von Mises stress regions are found close to the seed of the crystal, the highly curved crystal surface and the crystal-melt interface. The maximum thermal stress, which occurs at the crystal-melt interface, increases significantly in value as the crystal expands at the crown. After this, there is reduction in the maximum thermal stress as the crystal lengthens. There is a remarkable enhancement in the maximum von Mises stress when the crystal-melt interface is close to the bottom of the crucible. There are two obvious peaks in the maximum Von Mises stress, at the end of the crown stage and in the final stage, when cracking defects can form. To alleviate this problem, different power histories are considered in order to optimize the process to produce the lowest thermal stress in the crystal. The optimal power history is found to produce a significant reduction in the thermal stress in the crown stage.

Effect of 120 MeV Ag9+ ion irradiation of YCOB single crystals

NASA Astrophysics Data System (ADS)

Arun Kumar, R.; Dhanasekaran, R.

2012-09-01

Single crystals of yttrium calcium oxy borate (YCOB) grown from boron-tri-oxide flux were subjected to swift heavy ion irradiation using silver Ag9+ ions from the 15 UD Pelletron facility at Inter University Accelerator Center, New Delhi. The crystals were irradiated at 1 × 1013, 5 × 1013 and 1 × 1014 ions/cm2 fluences at room temperature and with 5 × 1013 ions/cm2 fluence at liquid nitrogen temperature. The pristine and the irradiated samples were characterized by glancing angle X-ray diffraction, UV-Vis-NIR and photoluminescence studies. From the characterization studies performed on the samples, it is inferred that the crystals irradiated at liquid nitrogen temperature had fewer defects compared to the crystals irradiated at room temperature and the defects increased when the ion fluence was increased at room temperature.

Heteroepitaxial Writing of Silicon-on-Sapphire Nanowires.

PubMed

Xu, Mingkun; Xue, Zhaoguo; Wang, Jimmy; Zhao, Yaolong; Duan, Yao; Zhu, Guangyao; Yu, Linwei; Xu, Jun; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Roca I Cabarrocas, Pere

2016-12-14

The heteroepitaxial growth of crystal silicon thin films on sapphire, usually referred to as SoS, has been a key technology for high-speed mixed-signal integrated circuits and processors. Here, we report a novel nanoscale SoS heteroepitaxial growth that resembles the in-plane writing of self-aligned silicon nanowires (SiNWs) on R-plane sapphire. During a low-temperature growth at <350 °C, compared to that required for conventional SoS fabrication at >900 °C, the bottom heterointerface cultivates crystalline Si pyramid seeds within the catalyst droplet, while the vertical SiNW/catalyst interface subsequently threads the seeds into continuous nanowires, producing self-oriented in-plane SiNWs that follow a set of crystallographic directions of the sapphire substrate. Despite the low-temperature fabrication process, the field effect transistors built on the SoS-SiNWs demonstrate a high on/off ratio of >5 × 10 4 and a peak hole mobility of >50 cm 2 /V·s. These results indicate the novel potential of deploying in-plane SoS nanowire channels in places that require high-performance nanoelectronics and optoelectronics with a drastically reduced thermal budget and a simplified manufacturing procedure.

Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation

NASA Astrophysics Data System (ADS)

Miyagawa, Chihiro; Kobayashi, Takumi; Taishi, Toshinori; Hoshikawa, Keigo

2014-09-01

Based on the growth of 3-inch diameter c-axis sapphire using the vertical Bridgman (VB) technique, numerical simulations were made and used to guide the growth of a 6-inch diameter sapphire. A 2D model of the VB hot-zone was constructed, the seeding interface shape of the 3-inch diameter sapphire as revealed by green laser scattering was estimated numerically, and the temperature distributions of two VB hot-zone models designed for 6-inch diameter sapphire growth were numerically simulated to achieve the optimal growth of large crystals. The hot-zone model with one heater was selected and prepared, and 6-inch diameter c-axis sapphire boules were actually grown, as predicted by the numerical results.

Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development

NASA Technical Reports Server (NTRS)

Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.

2004-01-01

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.

Nanostructuring of sapphire using time-modulated nanosecond laser pulses

NASA Astrophysics Data System (ADS)

Lorenz, P.; Zagoranskiy, I.; Ehrhardt, M.; Bayer, L.; Zimmer, K.

2017-02-01

The nanostructuring of dielectric surfaces using laser radiation is still a challenge. The IPSM-LIFE (laser-induced front side etching using in-situ pre-structured metal layer) method allows the easy, large area and fast laser nanostructuring of dielectrics. At IPSM-LIFE a metal covered dielectric is irradiated where the structuring is assisted by a self-organized molten metal layer deformation process. The IPSM-LIFE can be divided into two steps: STEP 1: The irradiation of thin metal layers on dielectric surfaces results in a melting and nanostructuring process of the metal layer and partially of the dielectric surface. STEP 2: A subsequent high laser fluence treatment of the metal nanostructures result in a structuring of the dielectric surface. At this study a sapphire substrate Al2O3(1-102) was covered with a 10 nm thin molybdenum layer and irradiated by an infrared laser with an adjustable time-dependent pulse form with a time resolution of 1 ns (wavelength λ = 1064 nm, pulse duration Δtp = 1 - 600 ns, Gaussian beam profile). The laser treatment allows the fabrication of different surface structures into the sapphire surface due to a pattern transfer process. The resultant structures were investigated by scanning electron microscopy (SEM). The process was simulated and the simulation results were compared with experimental results.

Electron paramagnetic resonance of gamma-irradiated single crystals of 3-nitroacetanilide

NASA Astrophysics Data System (ADS)

Aşik, Biray

2008-06-01

The electron paramagnetic resonance of single crystals of 3-nitroacetanilide has been observed and analyzed for different orientations of the crystal in the magnetic field, after being damaged at 300 K by γ-irradiation. The crystals have been investigated between 123 and 300 K. The spectra were found to be temperature independent. The irradiation of 3-nitroacetanilide by γ-rays produces radicals at the nitrogen atoms in the molecule. The principal values of the hyperfine coupling tensor of the unpaired electron and the principal values of the g-tensor were determined.

Development of a sapphire fiber thermometer using two wavelength bands

NASA Astrophysics Data System (ADS)

Ye, Linhua; Shen, Yonghang

1996-09-01

This paper reports the development of a sapphire ((alpha) - Al2O3) single crystal optical fiber thermometer using two wavelength bands. A thin film of precious metal or ceramic deposited onto one end of the sapphire fiber forms a mini-radiation cavity. The other end of the sapphire fiber is coupled to a low-loss silica fiber. Radiation from the small cavity is transmitted along the silica fiber into a photodetection system which consists of a lens, beam splitter, two interference filters (820 nm and 940 nm center wavelength, 30 nm bandwidth) and two silicon photocells. The temperature measurement is based on the detection of radiation from the small cavity. The sapphire fiber (0.25 - 1.0 mm diameter, 100 - 450 mm length) was grown by the laser heated pedestal growth (LHPG) methods. Transmission loss in the sapphire fiber was experimentally measured. Theoretical analysis shows the apparent emittance of the small cavity with a length to diameter (L/D) ratio greater than eight is a constant value near to one, so the small cavity can be considered as a small black-body cavity. Using the developed sapphire fiber temperature sensor, we have built a sapphire fiber thermometer based on a 8098 single-chip microcomputer system. It was calibrated at some known stable temperature point and uses the fundamental radiation law to extrapolate to other temperatures. By taking the ratio of the optical power at two wavelengths, errors due to changes in the system, such as emissivity and transmission losses, can be canceled out. The thermometer has an operating temperature range of 800 to 1900 degrees Celsius, and an accuracy of 0.2% at 1000 degrees Celsius. There are a number of applications of the thermometer both in science and industry.

Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

NASA Astrophysics Data System (ADS)

Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

2018-01-01

An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

Protein Crystallization by Combining Laser Irradiation and Solution-Stirring Techniques

NASA Astrophysics Data System (ADS)

Adachi, Hiroaki; Niino, Ai; Murakami, Satoshi; Takano, Kazufumi; Matsumura, Hiroyoshi; Kinoshita, Takayoshi; Warizaya, Masaichi; Inoue, Tsuyoshi; Mori, Yusuke; Sasaki, Takatomo

2005-03-01

Bovine adenosine deaminase in the absence of an inhibitor (free-ADA) does not form crystals when using conventional crystallization methods. Using a solution-stirring technique, we recently succeeded in generating a small number of free-ADA crystals. In this paper, we demonstrate the combination of laser-irradiated growth and stirring (COLAS). This technique was found to be useful for controlling crystal nucleation and growth, which led to the production of a much larger number of high-quality free-ADA crystals.

Re-crystallization of ITO films after carbon irradiation

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Khan, Shahid; Khan, Majid; Abbas, Turab Ali

2017-01-01

2.0 MeV carbon ion irradiation effects on Indium Tin Oxide (ITO) thin films on glass substrate are investigated. The films are irradiated with carbon ions in the fluence range of 1 × 1013 to 1 × 1015 ions/cm2. The irradiation induced effects in ITO are compared before and after ion bombardment by systematic study of structural, optical and electrical properties of the films. The XRD results show polycrystalline nature of un-irradiated ITO films which turns to amorphous state after 1 × 1013 ions/cm2 fluence of carbon ions. Further increase in ion fluence to 1 × 1014 ions/cm2 re-crystallizes the structure and retains for even higher fluences. A gradual decrease in the electrical conductivity and transmittance of irradiated samples is observed with increasing ion fluence. The band gap of the films is observed to be decreased after carbon irradiation.

Ti:Sapphire micro-structures by femtosecond laser inscription: Guiding and luminescence properties

NASA Astrophysics Data System (ADS)

Ren, Yingying; Jiao, Yang; Vázquez de Aldana, Javier R.; Chen, Feng

2016-08-01

We report on the fabrication of buried cladding waveguides with different diameters in a Ti:Sapphire crystal by femtosecond laser inscription. The propagation properties are studied, showing that the cladding waveguides could support near- to mid-infrared waveguiding at both TE and TM polarizations. Confocal micro-photoluminescence experiments reveal that the original fluorescence properties in the waveguide region are very well preserved, while it suffers from a strong quenching at the centers of laser induced filaments. Broadband waveguide fluorescence emissions with high efficiency are realized, indicating the application of the cladding waveguides in Ti:Sapphire as compact broadband luminescence sources in biomedical fields.

Crystal plasticity modeling of irradiation growth in Zircaloy-2

DOE PAGES

Patra, Anirban; Tome, Carlos; Golubov, Stanislav I.

2017-05-10

A reaction-diffusion based mean field rate theory model is implemented in the viscoplastic self-consistent (VPSC) crystal plasticity framework to simulate irradiation growth in hcp Zr and its alloys. A novel scheme is proposed to model the evolution (both number density and radius) of irradiation-induced dislocation loops that can be informed directly from experimental data of dislocation density evolution during irradiation. This framework is used to predict the irradiation growth behavior of cold-worked Zircaloy-2 and trends compared to available experimental data. The role of internal stresses in inducing irradiation creep is discussed. Effects of grain size, texture, and external stress onmore » the coupled irradiation growth and creep behavior are also studied.« less

Crystal plasticity modeling of irradiation growth in Zircaloy-2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patra, Anirban; Tome, Carlos; Golubov, Stanislav I.

A reaction-diffusion based mean field rate theory model is implemented in the viscoplastic self-consistent (VPSC) crystal plasticity framework to simulate irradiation growth in hcp Zr and its alloys. A novel scheme is proposed to model the evolution (both number density and radius) of irradiation-induced dislocation loops that can be informed directly from experimental data of dislocation density evolution during irradiation. This framework is used to predict the irradiation growth behavior of cold-worked Zircaloy-2 and trends compared to available experimental data. The role of internal stresses in inducing irradiation creep is discussed. Effects of grain size, texture, and external stress onmore » the coupled irradiation growth and creep behavior are also studied.« less

High-Temperature Mechanical Properties of Cr(3+) Doped Sapphire Fibers

NASA Technical Reports Server (NTRS)

Sayir, A.; QuispeCancapa, J. J.; deArellanoLopez, A. R.; Gray, Hugh R. (Technical Monitor)

2002-01-01

High-temperature slow-crack growth of single crystal 10 wt% Cr2O3 - Al2O3 (nominal composition) fibers has been studied by tensile rupture experiments at 1400 C, under different stressing rates (0.5 to 41.5 MPa/s). Slow-crack growth (SCG) is less pronounced with increasing Cr2O3. Rupture stresses increased with the stressing rate from 397 MPa to 515 MPa, resulting in a SCG exponent, N=19. The Cr2O3 composition was analyzed by Energy Dispersed X-Ray Spectra (EDS) and fracture surfaces were studied by scanning electron microscopy (SEM). Results are compared with previous studies on 100-300 ppm Cr3(+) doped sapphire fibers and on commercial sapphire fibers.

Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagase, Takeshi, E-mail: t-nagase@uhvem.osaka-u.ac.jp; Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871; Yamashita, Ryo

2016-04-28

Irradiation-induced crystallization of an amorphous phase was stimulated at a Pd-Si amorphous/silicon oxide (a(Pd-Si)/SiO{sub x}) interface at 298 K by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Under irradiation, a Pd-Si amorphous phase was initially formed at the crystalline face-centered cubic palladium/silicon oxide (Pd/SiO{sub x}) interface, followed by the formation of a Pd{sub 2}Si intermetallic compound through irradiation-induced crystallization. The irradiation-induced crystallization can be considered to be stimulated not by defect introduction through the electron knock-on effects and electron-beam heating, but by the electronic excitation mechanism. The observed irradiation-induced structural change at the a(Pd-Si)/SiO{sub x} and Pd/SiO{sub x}more » interfaces indicates multiple structural modifications at the metal/silicon oxide interfaces through electronic excitation induced by the electron-beam processes.« less

Visualization and Analysis of Impact Damage in Sapphire

DTIC Science & Technology

2011-11-01

transparent armor materials like Starphire soda - lime and borosilicate glass [8], fused silica [9] and the transparent polycrystalline ceramic AlON...conventional glass -based armor when a transparent ceramic is used as strike face on a glass -polymer laminate [1, 2, 3]. Sapphire, i.e. single crystal aluminum...materials. Since part of transparent armor consists of brittle materials, the fragmentation of the ceramic and glass layers plays a key role in the

Temporal intracavity detection of parasitic infrared absorption in Ti:Sapphire lasers

NASA Astrophysics Data System (ADS)

Deleva, A. D.; Peshev, Z. Y.; Aneva, Z. I.

1993-12-01

An intracavity technique with temporal sensitivity to optical losses is used to detect parasitic infrared absorption (PIRA) in Ti:sapphire crystals with high active-center concentrations. By means of comparative analysis, re-emission is established of part of the parasitically absorbed energy back into the laser action channel. A method is proposed for approximate quantitative determination of the relative part of re-emitting PIRA-centers with respect to their total number; for the highly-doped crystal described, it is estimated at about 11%.

EPR study of free radical in gamma-irradiated bis(cyclopentadienyl)zirconium dichloride single crystal

NASA Astrophysics Data System (ADS)

Caliskan, Betul; Caliskan, Ali Cengiz

2017-06-01

Bis(cyclopentadienyl)zirconium dichloride (BCZD; zirconocene dichloride) single crystals were exposed to 60Co-γ irradiation at room temperature. The irradiated single crystals were investigated between 125 and 470 K by electron paramagnetic resonance spectroscopy. The spectra of the crystals were found to be temperature independent. The paramagnetic center was attributed to the cyclopentadienyl radical. The g values of the radiation damage center observed in BCZD single crystal and the hyperfine structure constants of the free electron with nearby protons were obtained.

Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

NASA Astrophysics Data System (ADS)

Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

2018-02-01

(11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

NASA Astrophysics Data System (ADS)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Ferromagnetism in proton irradiated 4H-SiC single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Ren-Wei; Wang, Hua-Jie; Chen, Wei-Bin

Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

PubMed

Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

2015-11-16

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Co-doped sodium chloride crystals exposed to different irradiation temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ortiz-Morales, A.; Cruz-Zaragoza, E.; Furetta, C.

2013-07-03

Monocrystals of NaCl:XCl{sub 2}:MnCl{sub 2}(X = Ca,Cd) at four different concentrations have been analyzed. The crystals were exposed to different irradiation temperature, such as at room temperature (RT), solid water (SW), dry ice (DI) and liquid nitrogen (LN). The samples were irradiated with photon from {sup 60}Co irradiators. The co-doped sodium chloride crystals show a complex structure of glow curves that can be related to different distribution of traps. The linearity response was analyzed with the F(D) index. The F(D) value was less than unity indicating a sub-linear response was obtained from the TL response on the function of themore » dose. The glow curves were deconvoluted by using the CGCD program based on the first, second and general order kinetics.« less

Positron annihilation study of defects in electron-irradiated single crystal zinc oxide

NASA Astrophysics Data System (ADS)

To, C. K.; Yang, B.; Beling, C. D.; Fung, S.; Ling, C. C.; Gong, M.

2011-01-01

Pressurized melt grown zinc oxide (ZnO) single crystals purchased from Cermet Inc. were irradiated by 2MeV electrons with fluence of 6x1017cm-2. Isochronal annealing from 100°C-800°C was performed on the crystals under argon and air ambience. Variable Energy Doppler Broadening Spectroscopy (VEDBS) was carried out on both the as-grown and the irradiated samples at each annealing step. The migration, agglomeration and annealing of grown-in and irradiated-introduced defects were studied. It was observed that the grown-in vacancy-type defects concentration decreased at 300°C and 600 °C. For the irradiated sample annealed in argon, the positron trapping vacancy-type defect concentration decreased at 300°C and 600°C. Further annealing the as-grown and irradiated samples in argon increased the S parameter further. For the irradiated sample annealed in air, the vacancy-type defect concentration decreases at 300°C and 700°C.

Rhombohedral Super Hetero Epitaxy of Cubic SiGe on Trigonal c-plane Sapphire

NASA Technical Reports Server (NTRS)

Choi, Sang H.; Duzik, Adam J.

2017-01-01

New rhombohedral super-hetero-epitaxy technology was developed at NASA. This epitaxy technology enables the growth of unprecedented cubic-trigonal hybrid single crystal structures with lattice match on sapphire (Al2O3) substrates, hence with little strain and very few defects at the interface.

Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

PubMed

Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

2010-03-20

We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

High-temperature sensor instrumentation with a thin-film-based sapphire fiber.

PubMed

Guo, Yuqing; Xia, Wei; Hu, Zhangzhong; Wang, Ming

2017-03-10

A novel sapphire fiber-optic high-temperature sensor has been designed and fabricated based on blackbody radiation theory. Metallic molybdenum has been used as the film material to develop the blackbody cavity, owing to its relatively high melting point compared to that of sapphire. More importantly, the fabrication process for the blackbody cavity is simple, efficient, and economical. Thermal radiation emitted from such a blackbody cavity is transmitted via optical fiber to a remote place for detection. The operating principle, the sensor structure, and the fabrication process are described here in detail. The developed high-temperature sensor was calibrated through a calibration blackbody furnace at temperatures from 900°C to 1200°C and tested by a sapphire crystal growth furnace up to 1880°C. The experimental results of our system agree well with those from a commercial Rayteck MR1SCCF infrared pyrometer, and the maximum residual is approximately 5°C, paving the way for high-accuracy temperature measurement especially for extremely harsh environments.

Electron irradiation induced effects on the physico-chemical properties of L-Arginine Maleate Dihydrate (LAMD) single crystals

NASA Astrophysics Data System (ADS)

Thomas, Prince; Dhole, S. D.; Joseph, Ginson P.

2018-07-01

Single crystals of L-Arginine Maleate Dihydrate (LAMD) have been synthesized by slow solvent evaporation technique and irradiated with 6 MeV electrons at fluences of 0.5 ×1015e /cm2 , 1.0 ×1015e /cm2 and 1.5 ×1015e /cm2 . The Powder X-ray Diffraction (PXRD) studies showed that the intensity of the diffraction peaks of the Electron Beam (EB) irradiated crystals decreases with irradiation fluence. The electron irradiation induced effects on the optical parameters such as cut-off wavelength, band gap, Urbach energy and refractive index have been studied and the results are tabulated. The electronic parameters such as valence electron plasma energy, ℏωp , Penn gap, Ep , Fermi energy, EF and Electronic polarizability, α for pure and irradiated LAMD crystals are calculated. The electrical and thermal properties of the pure and irradiated LAMD crystals are also investigated.

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2017-01-01

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2016-01-01

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

EPR investigation of gamma irradiated single crystal guaifenesin: A combined experimental and computational study

NASA Astrophysics Data System (ADS)

Tasdemir, Halil Ugur; Sayin, Ulku; Türkkan, Ercan; Ozmen, Ayhan

2016-04-01

Gamma irradiated single crystal of Guaifenesin (Glyceryl Guaiacolate), an important expectorant drug, were investigated with Electron Paramagnetic Resonance (EPR) spectroscopy between 123 and 333 K temperature at different orientations in the magnetic field. Considering the chemical structure and the experimental spectra of the gamma irradiated single crystal of guaifenesin sample, we assumed that alkoxy or alkyl-type paramagnetic species may be produced by irradiation. Depending on this assumption, eight possible alkoxy and alkyl-type radicals were modeled and EPR parameters of these modeled radicals were calculated using the B3LYP/6-311++G(d,p)-level of density functional theory (DFT). Theoretically calculated values of alkyl-type modeled radical(R3) are in good agreement with experimentally determined EPR parameters of single crystal. Furthermore, simulation spectra which are obtained by using the theoretical initial values are well matched with the experimental spectra. It was determined that a stable Cα •H2αCβHβCγH2γ (R3) alkyl radical was produced in the host crystal as a result of gamma irradiation.

Sapphire tube pressure vessel

DOEpatents

Outwater, John O.

2000-01-01

A pressure vessel is provided for observing corrosive fluids at high temperatures and pressures. A transparent Teflon bag contains the corrosive fluid and provides an inert barrier. The Teflon bag is placed within a sapphire tube, which forms a pressure boundary. The tube is received within a pipe including a viewing window. The combination of the Teflon bag, sapphire tube and pipe provides a strong and inert pressure vessel. In an alternative embodiment, tie rods connect together compression fittings at opposite ends of the sapphire tube.

Irradiation effect on luminescence properties of fluoroperovskite single crystal (LiBaF3:Eu2+)

NASA Astrophysics Data System (ADS)

Daniel, D. Joseph; Madhusoodanan, U.; Nithya, R.; Ramasamy, P.

2014-03-01

Single crystals of pure and Eu2+ doped LiBaF3 have been grown from melt by using a vertical Bridgman-Stockbarger method. Effects induced by irradiation on europium doped LiBaF3 (lithium barium fluoride) single crystals were monitored by optical absorption, photoluminescence and thermoluminescence studies. The absorption bands of Eu2+ ions with peaks at 240, 290 and 320 nm were observed in the LiBaF3:Eu2+ crystal. Drastic increase in absorption was noted below 600 nm after gamma irradiation, which was dependent on the radiation dose. The additional absorption peak at around 570 nm was observed in irradiated crystal due to the ionization process Eu2+(-)e-→Eu3+. Photoluminescence of Eu2+ doped LiBaF3 single crystal shows sharp line peaked at ~359 nm and a broad band extending between 370 and 450 nm which shows a considerable reduction in Eu2+ PL intensity after gamma irradiation. Irradiated LiBaF3:Eu2+ sample has revealed three intense TL glow peaks at 128 °C (peak-1), 281 °C (peak-2) and 407 °C (peak-3). Activation energy (E) and frequency factor (s) of the latter two peaks were determined by various heating rate (VHR) method and graphical method.

Increase of bulk optical damage threshold fluences of KDP crystals by laser irradiation and heat treatment

DOEpatents

Swain, J.E.; Stokowski, S.E.; Milam, D.; Kennedy, G.C.; Rainer, F.

1982-07-07

The bulk optical damage threshold fluence of potassium dihydrogen phosphate (KDP) crystals is increased by irradiating the crystals with laser pulses of duration 1 to 20 nanoseconds of increasing fluence, below the optical damage threshold fluence for untreated crystals, or by baking the crystals for times of the order of 24 hours at temperatures of 110 to 165/sup 0/C, or by a combination of laser irradiation and baking.

Defects induced in cerium dioxide single crystals by electron irradiation

DOE PAGES

Costantini, Jean-Marc; Miro, Sandrine; Touati, Nadia; ...

2018-01-12

In this work, Micro-Raman spectroscopy, X-band electron paramagnetic resonance (EPR) spectroscopy, and UV-visible optical absorption spectroscopy were used to study the damage production in cerium dioxide (CeO 2) single crystals by electron irradiation for three energies (1.0, 1.4, and 2.5 MeV). The Raman-active T 2g peak was left unchanged after 2.5-MeV electron irradiation at a high fluence. This shows that no structural modifications occurred for the cubic fluorite structure. UV-visible optical absorption spectra exhibited a characteristic sub band-gap tail for 1.4-MeV and 2.5-MeV energies, but not for 1.0 MeV. Narrow EPR lines were recorded near liquid-helium temperature after 2.5-MeV electronmore » irradiation; whereas no such signal was found for the virgin un-irradiated crystal or after 1.0-MeV irradiation for the same fluence. The angular variation of these lines in the {111} plane revealed a weak g-factor anisotropy assigned to Ce 3+ ions (with the 4f 1 configuration) in a high-symmetry local environment. Finally, it is concluded that Ce 3+ ions may be produced by a reduction resulting from the displacement damage process. However, no evidence of F + or F 0 center or hole center formation due to irradiation was found from the present EPR and optical absorption spectra.« less

Defects induced in cerium dioxide single crystals by electron irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costantini, Jean-Marc; Miro, Sandrine; Touati, Nadia

In this work, Micro-Raman spectroscopy, X-band electron paramagnetic resonance (EPR) spectroscopy, and UV-visible optical absorption spectroscopy were used to study the damage production in cerium dioxide (CeO 2) single crystals by electron irradiation for three energies (1.0, 1.4, and 2.5 MeV). The Raman-active T 2g peak was left unchanged after 2.5-MeV electron irradiation at a high fluence. This shows that no structural modifications occurred for the cubic fluorite structure. UV-visible optical absorption spectra exhibited a characteristic sub band-gap tail for 1.4-MeV and 2.5-MeV energies, but not for 1.0 MeV. Narrow EPR lines were recorded near liquid-helium temperature after 2.5-MeV electronmore » irradiation; whereas no such signal was found for the virgin un-irradiated crystal or after 1.0-MeV irradiation for the same fluence. The angular variation of these lines in the {111} plane revealed a weak g-factor anisotropy assigned to Ce 3+ ions (with the 4f 1 configuration) in a high-symmetry local environment. Finally, it is concluded that Ce 3+ ions may be produced by a reduction resulting from the displacement damage process. However, no evidence of F + or F 0 center or hole center formation due to irradiation was found from the present EPR and optical absorption spectra.« less

Imaging of gamma-Irradiated Regions of a Crystal

NASA Technical Reports Server (NTRS)

Dragoi, Danut; McClure, Steven; Johnston, Allan; Chao, Tien-Hsin

2004-01-01

A holographic technique has been devised for generating a visible display of the effect of exposure of a photorefractive crystal to gamma rays. The technique exploits the space charge that results from trapping of electrons in defects induced by gamma rays. The technique involves a three-stage process. In the first stage, one writes a holographic pattern in the crystal by use of the apparatus shown in Figure 1. A laser beam of 532-nm wavelength is collimated and split into signal and reference beams by use of a polarizing beam splitter. On its way to the crystal, the reference beam goes through a two-dimensional optical scanner that contains two pairs of lenses (L1y, L2y and L1x,L2x) and mirrors M1 and M2, which can be rotated by use of micrometer drives to make fine adjustments. The signal beam is sent through a spatial light modulator that imposes the holographic pattern, then through two imaging lenses L(sub img) on its way to the crystal. An aperture is placed at the common focus of lenses Limg to suppress high-order diffraction from the spatial light modulator. The hologram is formed by interference between the signal and reference beams. A camera lens focuses an image of the interior of the crystal onto a charge-coupled device (CCD). If the crystal is illuminated by only the reference beam once the hologram has been formed, then an image of the hologram is formed on the CCD: this phenomenon is exploited to make visible the pattern of gamma irradiation of the crystal, as described next. In the second stage of the process, the crystal is removed from the holographic apparatus and irradiated with rays at a dose of about 100 krad. In the third stage of the process, the crystal is remounted in the holographic apparatus in the same position as in the first stage and illuminated with only the reference beam to obtain the image of the hologram as modified by the effect of the rays. The orientations of M1 and M2 can be adjusted slightly, if necessary, to maximize the

Growth and characterization of β-Ga2O3 crystals

NASA Astrophysics Data System (ADS)

Nikolaev, V. I.; Maslov, V.; Stepanov, S. I.; Pechnikov, A. I.; Krymov, V.; Nikitina, I. P.; Guzilova, L. I.; Bougrov, V. E.; Romanov, A. E.

2017-01-01

Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8 mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of 46″. Young's modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.

Miniature Sapphire Acoustic Resonator - MSAR

NASA Technical Reports Server (NTRS)

Wang, Rabi T.; Tjoelker, Robert L.

2011-01-01

A room temperature sapphire acoustics resonator incorporated into an oscillator represents a possible opportunity to improve on quartz ultrastable oscillator (USO) performance, which has been a staple for NASA missions since the inception of spaceflight. Where quartz technology is very mature and shows a performance improvement of perhaps 1 dB/decade, these sapphire acoustic resonators when integrated with matured quartz electronics could achieve a frequency stability improvement of 10 dB or more. As quartz oscillators are an essential element of nearly all types of frequency standards and reference systems, the success of MSAR would advance the development of frequency standards and systems for both groundbased and flight-based projects. Current quartz oscillator technology is limited by quartz mechanical Q. With a possible improvement of more than x 10 Q with sapphire acoustic modes, the stability limit of current quartz oscillators may be improved tenfold, to 10(exp -14) at 1 second. The electromagnetic modes of sapphire that were previously developed at JPL require cryogenic temperatures to achieve the high Q levels needed to achieve this stability level. However sapphire fs acoustic modes, which have not been used before in a high-stability oscillator, indicate the required Q values (as high as Q = 10(exp 8)) may be achieved at room temperature in the kHz range. Even though sapphire is not piezoelectric, such a high Q should allow electrostatic excitation of the acoustic modes with a combination of DC and AC voltages across a small sapphire disk (approximately equal to l mm thick). The first evaluations under this task will test predictions of an estimated input impedance of 10 kilohms at Q = 10(exp 8), and explore the Q values that can be realized in a smaller resonator, which has not been previously tested for acoustic modes. This initial Q measurement and excitation demonstration can be viewed similar to a transducer converting electrical energy to

Electron-beam-irradiation-induced crystallization of amorphous solid phase change materials

NASA Astrophysics Data System (ADS)

Zhou, Dong; Wu, Liangcai; Wen, Lin; Ma, Liya; Zhang, Xingyao; Li, Yudong; Guo, Qi; Song, Zhitang

2018-04-01

The electron-beam-irradiation-induced crystallization of phase change materials in a nano sized area was studied by in situ transmission electron microscopy and selected area electron diffraction. Amorphous phase change materials changed to a polycrystalline state after being irradiated with a 200 kV electron beam for a long time. The results indicate that the crystallization temperature strongly depends on the difference in the heteronuclear bond enthalpy of the phase change materials. The selected area electron diffraction patterns reveal that Ge2Sb2Te5 is a nucleation-dominated material, when Si2Sb2Te3 and Ti0.5Sb2Te3 are growth-dominated materials.

Kilohertz Pulse Repetition Frequency Slab Ti:sapphire Lasers with High Average Power (10 W)

NASA Astrophysics Data System (ADS)

Wadsworth, William J.; Coutts, David W.; Webb, Colin E.

1999-11-01

High-average-power broadband 780-nm slab Ti:sapphire lasers, pumped by a kilohertz pulse repetition frequency copper vapor laser (CVL), were demonstrated. These lasers are designed for damage-free power scaling when pumped by CVL s configured for maximum output power (of order 100 W) but with poor beam quality ( M 2 300 ). A simple Brewster-angled slab laser side pumped by a CVL produced 10-W average power (1.25-mJ pulses at 8 kHz) with 4.2-ns FWHM pulse duration at an absolute efficiency of 15% (68-W pump power). Thermal lensing in the Brewster slab laser resulted in multitransverse mode output, and pump absorption was limited to 72% by the maximum doping level for commercially available Ti:sapphire (0.25%). A slab laser with a multiply folded zigzag path was therefore designed and implemented that produced high-beam-quality (TEM 00 -mode) output when operated with cryogenic cooling and provided a longer absorption path for the pump. Excessive scattering of the Ti:sapphire beam at the crystal surfaces limited the efficiency of operation for the zigzag laser, but fluorescence diagnostic techniques, gain measurement, and modeling suggest that efficient power extraction ( 15 W TEM 00 , 23% efficiency) from this laser would be possible for crystals with an optical quality surface polish.

Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

NASA Astrophysics Data System (ADS)

Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

2017-05-01

Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

Removal of Lattice Imperfections that Impact the Optical Quality of Ti:Sapphire using Advanced Magnetorheological Finishing Techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menapace, J A; Schaffers, K I; Bayramian, A J

2007-10-09

Ti:sapphire has become the premier lasing medium material for use in solid-state femtosecond high-peak power laser systems because of its wide wavelength tuning range. With a tuneable range from 680 to 1100 nm, peaking at 800 nm, Ti:sapphire lasing crystals can easily be tuned to the required pump wavelength and provide very high pump brightness due to their good beam quality and high output power of typically several watts. Femtosecond lasers are used for precision cutting and machining of materials ranging from steel to tooth enamel to delicate heart tissue and high explosives. These ultra-short pulses are too brief tomore » transfer heat or shock to the material being cut, which means that cutting, drilling, and machining occur with virtually no damage to surrounding material. Furthermore, these lasers can cut with high precision, making hairline cuts of less than 100 microns in thick materials along a computer-generated path. Extension of laser output to higher energies is limited by the size of the amplification medium. Yields of high quality large diameter crystals have been constrained by lattice distortions that may appear in the boule limiting the usable area from which high quality optics can be harvested. Lattice distortions affect the transmitted wavefront of these optics which ultimately limits the high-end power output and efficiency of the laser system, particularly when operated in multi-pass mode. To make matters even more complicated, Ti:sapphire is extremely hard (Mohs hardness of 9 with diamond being 10) which makes it extremely difficult to accurately polish using conventional methods without subsurface damage or significant wavefront error. In this presentation, we demonstrate for the first time that Magnetorheological finishing (MRF) can be used to compensate for the lattice distortions in Ti:sapphire by perturbing the transmitted wavefront. The advanced MRF techniques developed allow for precise polishing of the optical inverse of lattice

Modeling Czochralski growth of oxide crystals for piezoelectric and optical applications

NASA Astrophysics Data System (ADS)

Stelian, C.; Duffar, T.

2018-05-01

Numerical modeling is applied to investigate the impact of crystal and crucible rotation on the flow pattern and crystal-melt interface shape in Czochralski growth of oxide semi-transparent crystals used for piezoelectric and optical applications. Two cases are simulated in the present work: the growth of piezoelectric langatate (LGT) crystals of 3 cm in diameter in an inductive furnace, and the growth of sapphire crystals of 10 cm in diameter in a resistive configuration. The numerical results indicate that the interface shape depends essentially on the internal radiative heat exchanges in the semi-transparent crystals. Computations performed by applying crystal/crucible rotation show that the interface can be flattened during LGT growth, while flat-interface growth of large diameter sapphire crystals may not be possible.

Some new results on the frequency characteristics on quartz crystals irradiated by ionizing and particle radiations

NASA Technical Reports Server (NTRS)

Bahadur, H.; Parshad, R.

1981-01-01

The frequency behavior of AT-cut quartz crystals irradiated by X -, gamma rays and fast neutrons. Initial instability in frequency for gamma and neutron irradiated crystals was found. All the different radiations first give a negative frequency shift at lower doses which are followed by positive frequency shift for increased doses. Results are explained in terms of the fundamental crystal structure. Applications of the frequency results for radiation hardening are proposed.

Temperature Compensated Sapphire Resonator for Ultrastable Oscillator Operating at Temperatures Near 77 Deg Kelvin

NASA Technical Reports Server (NTRS)

Dick, G. John (Inventor); Santiago, David G. (Inventor)

1999-01-01

A sapphire resonator for an ultrastable oscillator capable of substantial performance improvements over the best available crystal quartz oscillators in a compact cryogenic package is based on a compensation mechanism enabled by the difference between copper and sapphire thermal expansion coefficients for so tuning the resonator as to cancel the temperature variation of the sapphire's dielectric constant. The sapphire resonator consists of a sapphire ring separated into two parts with webs on the outer end of each to form two re-entrant parts which are separated by a copper post. The re-entrant parts are bonded to the post by indium solder for good thermal conductivity between parts of that subassembly which is supported on the base plate of a closed copper cylinder (rf shielding casing) by a thin stainless steel cylinder. A unit for temperature control is placed in the stainless steel cylinder and is connected to the subassembly of re-entrant parts and copper post by a layer of indium for good thermal conduction. In normal use, the rf shielding casing is placed in a vacuum tank which is in turn placed in a thermos flask of liquid nitrogen. The temperature regulator is controlled from outside the thermos flask to a temperature in a range of about 40K to 150K, such as 87K for the WGH-811, mode of resonance in response to microwave energy inserted into the rf shielding casing through a port from an outside source.

Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

NASA Technical Reports Server (NTRS)

Deluca, J. J. (Inventor)

1975-01-01

Bonding of an element comprising sapphire, ruby or blue sapphire to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide is discussed. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y2SiO5 crystal

NASA Astrophysics Data System (ADS)

Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; Qiao, Mei; Wang, Tie-Jun; Zhang, Jing; Liu, Yong; Liu, Peng; Zhu, Zi-Hua; Wang, Xue-Lin

2017-09-01

Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this paper, we used 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated Y2SiO5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prism coupling and the end-facet coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.

Primary and aggregate color centers in proton irradiated LiF crystals and thin films for luminescent solid state detectors

NASA Astrophysics Data System (ADS)

Piccinini, M.; Ambrosini, F.; Ampollini, A.; Bonfigli, F.; Libera, S.; Picardi, L.; Ronsivalle, C.; Vincenti, M. A.; Montereali, R. M.

2015-04-01

Proton beams of 3 MeV energy, produced by the injector of a linear accelerator for proton therapy, were used to irradiate at room temperature lithium fluoride crystals and polycrystalline thin films grown by thermal evaporation. The irradiation fluence range was 1011-1015 protons/cm2. The proton irradiation induced the stable formation of primary and aggregate color centers. Their formation was investigated by optical absorption and photoluminescence spectroscopy. The F2 and F3+ photoluminescence intensities, carefully measured in LiF crystals and thin films, show linear behaviours up to different maximum values of the irradiation fluence, after which a quenching is observed, depending on the nature of the samples (crystals and films). The Principal Component Analysis, applied to the absorption spectra of colored crystals, allowed to clearly identify the formation of more complex aggregate defects in samples irradiated at highest fluences.

Melt inclusions in alluvial sapphires from Montana, USA: Formation of sapphires as a restitic component of lower crustal melting?

NASA Astrophysics Data System (ADS)

Palke, Aaron C.; Renfro, Nathan D.; Berg, Richard B.

2017-05-01

We report here compositions of glassy melt inclusions hosted in sapphires (gem quality corundum) from three alluvial deposits in Montana, USA including the Rock Creek, Dry Cottonwood Creek, and Missouri River deposits. While it is likely that sapphires in these deposits were transported to the surface by Eocene age volcanic events, their ultimate origin is still controversial with many models suggesting the sapphires are xenocrysts with a metamorphic or metasomatic genesis. Melt inclusions are trachytic, dacitic, and rhyolitic in composition. Microscopic observations allow separation between primary and secondary melt inclusions. The primary melt inclusions represent the silicate liquid that was present at the time of sapphire formation and are enriched in volatile components (8-14 wt.%). Secondary melt inclusions analyzed here for Dry Cottonwood Creek and Rock Creek sapphires are relatively volatile depleted and represent the magma that carried the sapphires to the surface. We propose that alluvial Montana sapphires from these deposits formed through a peritectic melting reaction during partial melting of a hydrated plagioclase-rich protolith (e.g. an anorthosite). The heat needed to drive this reaction was likely derived from the intrusion of mantle-derived mafic magmas near the base of the continental lithosphere during rollback of the Farallon slab around 50 Ma. These mafic magmas may have ended up as the ultimate carrier of the sapphires to the surface as evidenced by the French Bar trachybasalt near the Missouri River deposit. Alternatively, the trachytic, rhyolitic, and dacitic secondary melt inclusions at Rock Creek and Dry Cottonwood Creek suggests that the same magmas produced during the partial melting event that generated the sapphires may have also transported them to the surface. Determining the genesis of these deposits will further our understanding of sapphire deposits around the world and may help guide future sapphire prospecting techniques. This

Photoluminescence and positron annihilation spectroscopic investigation on a H+ irradiated ZnO single crystal

NASA Astrophysics Data System (ADS)

Sarkar, A.; Chakrabarti, Mahuya; Sanyal, D.; Bhowmick, D.; Dechoudhury, S.; Chakrabarti, A.; Rakshit, Tamita; Ray, S. K.

2012-08-01

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H+ ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a ‘hydrogen at oxygen vacancy’ type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ˜4 × 1017 cm-3 (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ˜175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal.

PubMed

Sarkar, A; Chakrabarti, Mahuya; Sanyal, D; Bhowmick, D; Dechoudhury, S; Chakrabarti, A; Rakshit, Tamita; Ray, S K

2012-08-15

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

Spectral Behavior of Irradiated Sodium Chloride Crystals Under Europa-Like Conditions

NASA Astrophysics Data System (ADS)

Poston, Michael J.; Carlson, Robert W.; Hand, Kevin P.

2017-12-01

F- and M-color center formation (decay) was observed during (after) irradiation of sodium chloride crystal grains with 10 keV electrons as a function of temperature, radiation dose rate, and radiation dose. The F centers (peak center: 460 nm) were found to form and decay at a faster rate than the M centers (peak center: 720 nm). These effects were influenced by temperature and possibly by irradiation dose rate. Tracking the band depth ratio of the color center features during irradiation could enable age determination of geologically very young features on the surface of Europa and other icy ocean worlds.

Electrical and thermoluminescence properties of γ-irradiated La2CuO4 crystals

NASA Astrophysics Data System (ADS)

El-Kolaly, M. A.; Abd El-Kader, H. I.; Kassem, M. E.

1994-12-01

Measurements of the electrical properties of unirradiated as well as ?-irradiated La2CuO4 crystals were carried out at different temperatures in the frequency range of 0.1-100 kHz. Thermoluminescence (TL) studies were also performed on such crystals in the temperature range of 300-600K. The conductivity of the unirradiated La2CuO4 crystals were found to obey the power law frequency dependence at each measured temperature below the transition temperature (Tc = 450K). The activation energies for conduction and dielectric relaxation time have been calculated. The TL response and the dc resistance were found to increase with ?-irradiation dose up to 9-10 kGy. The results showed that the ferroelastic domain walls of La2CuO4 crystal as well as its TL traps are sensitive to ?-raditaion. This material can be used in radiation measurements in the range 225 Gy-10 kGy.

Some new results on irradiation characteristics of synthetic quartz crystals and their application to radiation hardening

NASA Technical Reports Server (NTRS)

Bahadur, H.; Parshad, R.

1983-01-01

The paper reports some new results on irradiation characteristics of synthetic quartz crystals and their application to radiation hardening. The present results show how the frequency shift in quartz crystals can be influenced by heat processing prior to irradiation and how this procedure can lead to radiation hardening for obtaining precise frequencies and time intervals from quartz oscillators in space.

Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y 2SiO 5 crystal

DOE PAGES

Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; ...

2017-01-28

Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this study, we used 6 MeV C ions with a fluence of 1 × 10 15 ion/cm 2 irradiated Y 2SiO 5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prismmore » coupling and the end-facet coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. Finally, 6 MeV C ions with a fluence of 1 × 10 15 ion/cm 2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.« less

Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

NASA Technical Reports Server (NTRS)

Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

2012-01-01

The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

Modelling irradiation-induced softening in BCC iron by crystal plasticity approach

NASA Astrophysics Data System (ADS)

Xiao, Xiazi; Terentyev, Dmitry; Yu, Long; Song, Dingkun; Bakaev, A.; Duan, Huiling

2015-11-01

Crystal plasticity model (CPM) for BCC iron to account for radiation-induced strain softening is proposed. CPM is based on the plastically-driven and thermally-activated removal of dislocation loops. Atomistic simulations are applied to parameterize dislocation-defect interactions. Combining experimental microstructures, defect-hardening/absorption rules from atomistic simulations, and CPM fitted to properties of non-irradiated iron, the model achieves a good agreement with experimental data regarding radiation-induced strain softening and flow stress increase under neutron irradiation.

Direct diode-pumped Kerr-lens mode-locked Ti:sapphire laser

PubMed Central

Durfee, Charles G.; Storz, Tristan; Garlick, Jonathan; Hill, Steven; Squier, Jeff A.; Kirchner, Matthew; Taft, Greg; Shea, Kevin; Kapteyn, Henry; Murnane, Margaret; Backus, Sterling

2012-01-01

We describe a Ti:sapphire laser pumped directly with a pair of 1.2W 445nm laser diodes. With over 30mW average power at 800 nm and a measured pulsewidth of 15fs, Kerr-lens-modelocked pulses are available with dramatically decreased pump cost. We propose a simple model to explain the observed highly stable Kerr-lens modelocking in spite of the fact that both the mode-locked and continuous-wave modes are smaller than the pump mode in the crystal. PMID:22714433

Oxidation and reduction in irradiated binary crystals of resorcinol and progesterone

NASA Astrophysics Data System (ADS)

Box, Harold C.; Budzinski, Edwin E.

1985-12-01

The binary single crystals of resorcinol and progesterone were x-irradiated at 4.2 K. The semiquinone of resorcinol was generated by radiation induced oxidation. The oxidation and reduction products were identified from ESR and ENDOR measurements. (AIP)

Ti : sapphire laser synchronised with femtosecond Yb pump laser via nonlinear pulse coupling in Ti : sapphire active medium

NASA Astrophysics Data System (ADS)

Didenko, N. V.; Konyashchenko, A. V.; Konyashchenko, D. A.; Kostryukov, P. V.; Kuritsyn, I. I.; Lutsenko, A. P.; Mavritskiy, A. O.

2017-02-01

A laser system utilising the method of synchronous pumping of a Ti : sapphire laser by a high-power femtosecond Yb3+-doped laser is described. The pulse repetition rate of the Ti : sapphire laser is successfully locked to the repetition rate of the Yb laser for more than 6 hours without the use of any additional electronics. The measured timing jitter is shown to be less than 1 fs. A simple qualitative model addressing the synchronisation mechanism utilising the cross-phase modulation of oscillation and pump pulses within a Ti : sapphire active medium is proposed. Output parameters of the Ti : sapphire laser as functions of its cavity length are discussed in terms of this model.

Synthesis of calcium oxalate crystals in culture medium irradiated with non-equilibrium atmospheric-pressure plasma

NASA Astrophysics Data System (ADS)

Kurake, Naoyuki; Tanaka, Hiromasa; Ishikawa, Kenji; Nakamura, Kae; Kajiyama, Hiroaki; Kikkawa, Fumitaka; Mizuno, Masaaki; Yamanishi, Yoko; Hori, Masaru

2016-09-01

Octahedral particulates several tens of microns in size were synthesized in a culture medium irradiated through contact with a plume of non-equilibrium atmospheric-pressure plasma (NEAPP). The particulates were identified in the crystalline phase as calcium oxalate dihydrate (COD). The original medium contained constituents such as NaCl, d-glucose, CaCl2, and NaHCO3 but not oxalate or oxalic acid. The oxalate was clearly synthesized and crystallized in the medium as thermodynamically unstable COD crystals after the NEAPP irradiation.

Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

NASA Astrophysics Data System (ADS)

Stoker, D. S.; Baek, J.; Wang, W.; Kovar, D.; Becker, M. F.; Keto, J. W.

2006-05-01

We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG ( z -scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN -sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χxxxx(3)(3ω;ω,ω,ω)=1.52±0.25×10-13esu . The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects.

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

NASA Astrophysics Data System (ADS)

Chan, Chia-Hua; Hou, Chia-Hung; Tseng, Shao-Ze; Chen, Tsing-Jen; Chien, Hung-Ta; Hsiao, Fu-Li; Lee, Chien-Chieh; Tsai, Yen-Ling; Chen, Chii-Chang

2009-07-01

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grachev, V.; Meyer, M.; Malovichko, G.

2014-12-07

Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20 MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of galliummore » electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and γ-radiation.« less

Leveraging Python Interoperability Tools to Improve Sapphire's Usability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gezahegne, A; Love, N S

2007-12-10

The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

Mode-converting coupler for silicon-on-sapphire devices

NASA Astrophysics Data System (ADS)

Zlatanovic, S.; Offord, B. W.; Owen, M.; Shimabukuro, R.; Jacobs, E. W.

2015-02-01

Silicon-on-sapphire devices are attractive for the mid-infrared optical applications up to 5 microns due to the low loss of both silicon and sapphire in this wavelength band. Designing efficient couplers for silicon-on-sapphire devices presents a challenge due to a highly confined mode in silicon and large values of refractive index of both silicon and sapphire. Here, we present design, fabrication, and measurements of a mode-converting coupler for silicon-on-sapphire waveguides. We utilize a mode converter layout that consists of a large waveguide that is overlays a silicon inverse tapered waveguide. While this geometry was previously utilized for silicon-on-oxide devices, the novelty is in using materials that are compatible with the silicon-on-sapphire platform. In the current coupler the overlaying waveguide is made of silicon nitride. Silicon nitride is the material of choice because of the large index of refraction and low absorption from near-infrared to mid-infrared. The couplers were fabricated using a 0.25 micron silicon-on-sapphire process. The measured coupling loss from tapered lensed silica fibers to the silicon was 4.8dB/coupler. We will describe some challenges in fabrication process and discuss ways to overcome them.

Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

NASA Astrophysics Data System (ADS)

Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

2018-04-01

Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

Reduced cost and improved figure of sapphire optical components

NASA Astrophysics Data System (ADS)

Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

2015-10-01

Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

A Compact Ti:Sapphire Laser With its Third Harmonic Generation (THG) for an Airborne Ozone Differential Absorption Lidar (DIAL) Transmitter

NASA Technical Reports Server (NTRS)

Chen, Songsheng; Storm, Mark E.; Marsh, Waverly D.; Petway, Larry B.; Edwards, William C.; Barnes, James C.

2000-01-01

A compact and high-pulse-energy Ti:Sapphire laser with its Third Harmonic Generation (THG) has been developed for an airborne ozone differential absorption lidar (DIAL) to study the distributions and concentrations of the ozone throughout the troposphere. The Ti:Sapphire laser, pumped by a frequency-doubled Nd:YAG laser and seeded by a single mode diode laser, is operated either at 867 nm or at 900 nm with a pulse repetition frequency of 20 Hz. High energy laser pulses (more than 110 mJ/pulse) at 867 nm or 900 nm with a desired beam quality have been achieved and utilized to generate its third harmonic at 289nm or 300nm, which are on-line and off-line wavelengths of an airborne ozone DIAL. After being experimentally compared with Beta-Barium Borate (beta - BaB2O4 or BBO) nonlinear crystals, two Lithium Triborate (LBO) crystals (5 x 5 x 20 cu mm) are selected for the Third Harmonic Generation (THG). In this paper, we report the Ti:Sapphire laser at 900 nm and its third harmonic at 300 nm. The desired high ultraviolet (UV) output pulse energy is more than 30 mJ at 300 nm and the energy conversion efficiency from 900 nm to 300 nm is 30%.

Electron spin resonance of an irradiated single crystal of potassium hydrogen maleate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwasaki, Machio; Itoh, Koichi

1963-09-15

Electron spin resonance absorptions of x-irradiated single crystals of potassium hydrogen maleate and potassium deuterium maleate were observed. Both compounds gave the same hyperfine structures, although the slightly sharper line widths were observed for the deuterium exchanged compound.

EPR study of a gamma-irradiated (2-hydroxyethyl)triphenylphosphonium chloride single crystal

NASA Astrophysics Data System (ADS)

Karakaş, E.; Türkkan, E.; Dereli, Ö.; Sayιn, Ü.; Tapramaz, R.

2011-12-01

In this study, gamma-irradiated single crystals of (2-hydroxyethyl)triphenylphosphonium chloride [CH2CH2OH P(C6H5)3Cl] were investigated with electron paramagnetic resonance (EPR) spectroscopy at room temperature for different orientations in the magnetic field. The single crystals were irradiated with a 60Co-γ-ray source at 0.818 kGy/h for about 36 h. Taking the chemical structure and the experimental spectra of the irradiated single crystal of the title compound into consideration, a paramagnetic species was produced with the unpaired electron delocalized around 31P and several 1H nuclei. The anisotropic hyperfine values due to the 31P nucleus, slightly anisotropic hyperfine values due to the 1H nuclei and the g-tensor of the radical were measured from the spectra. Depending on the molecular structure and measured parameters, three possible radicals were modeled using the B3LYP/6-31+G(d) level of density-functional theory, and EPR parameters were calculated for modeled radicals using the B3LYP/TZVP method/basis set combination. The calculated hyperfine coupling constants were found to be in good agreement with the observed EPR parameters. The experimental and theoretically simulated spectra for each of the three crystallographic axes were well matched with one of the modeled radicals (discussed in the text). We thus identified the radical C˙H2CH2 P(C 6H5)3 Cl as a paramagnetic species produced in a single crystal of the title compound in two magnetically distinct sites. The experimental g-factor and hyperfine coupling constants of the radical were found to be anisotropic, with the isotropic values g iso = 2.0032, ? G, ? G, ? G and ? G for site 1 and g iso=2.0031, ? G, ? G ? G and ? G for site 2.

Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

PubMed Central

2013-01-01

Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718

Vortex dynamics in β-FeSe single crystals: effects of proton irradiation and small inhomogeneous stress

NASA Astrophysics Data System (ADS)

Amigó, M. L.; Haberkorn, N.; Pérez, P.; Suárez, S.; Nieva, G.

2017-12-01

We report on the critical current density J c and the vortex dynamics of pristine and 3 MeV proton irradiated (cumulative dose equal to 2× {10}16 cm-2) β-FeSe single crystals. We also analyze a remarkable dependence of the superconducting critical temperature T c, J c and the flux creep rate S on the sample mounting method. Free-standing crystals present T c = 8.4(1) K, which increases to 10.5(1) K when they are fixed to the sample holder by embedding them with GE-7031 varnish. On the other hand, the irradiation has a marginal effect on T c. The pinning scenario can be ascribed to twin boundaries and random point defects. We find that the main effect of irradiation is to increase the density of random point defects, while the embedding mainly reduces the density of twin boundaries. Pristine and irradiated crystals present two outstanding features in the temperature dependence of the flux creep rate: S(T) presents large values at low temperatures, which can be attributed to small pinning energies, and a plateau at intermediate temperatures, which can be associated with glassy relaxation. From Maley analysis, we observe that the characteristic glassy exponent μ changes from ˜1.7 to 1.35-1.4 after proton irradiation.

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Kim, Young-Min

In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al{sub 2}O{sub 3}) with the substitutionmore » of Si for Al.« less

Sapphire Fabry-Perot high-temperature sensor study

NASA Astrophysics Data System (ADS)

Yao, Yi-qiang; Liang, Wei-long; Gui, Xinwang; Fan, Dian

2017-04-01

A new structure sapphire fiber Fabry-Perot (F-P) high-temperature sensor based on sapphire wafer was proposed and fabricated. The sensor uses the sapphire fiber as a transmission waveguide, the sapphire wafer as an Fabry-Perot (F-P) interferometer and the new structure of "Zirconia ferrule-Zirconia tube" as the sensor fixing structure of the sensor. The reflection spectrum of the interferometer was demodulated by a serial of data processing including FIR bandpass filter, FFT (Fast Fourier Transformation) estimation and LSE (least squares estimation) compensation to obtain more precise OPD. Temperature measurement range is from 20 to 1000°C in experiment. The experimental results show that the sensor has the advantages of small size, low cost, simple fabrication and high repeatability. It can be applied for longterm, stable and high-precision high temperature measurement in harsh environments.

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Khan, M. A.; Skogman, R. A.; van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates is reported. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. As best as is known this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

Isothermal crystallization of gamma irradiated LDPE in the presence of oxygen

NASA Astrophysics Data System (ADS)

Lanfranconi, M. R.; Alvarez, V. A.; Perez, C. J.

2015-06-01

This work is focused on the study of the effect of oxygen on the isothermal crystallization process of gamma irradiated low density polyethylene (LDPE). The induction time increased with the dose indicating a retarding effect. On other hand, at the same dose, this parameter decreased with the augment in the oxygen content. The classical Avrami equation was used to analyze the crystallization kinetic of these materials. n values suggested that both, the dose and the oxygen content, did not affect the mechanism of crystals growth. An Arrhenius type equation was used for the rate constant (k). Used models correctly reproduced the experimental data. TTT diagrams of studied materials were constructed and also reflected the effects of the doses and the oxygen content.

Increased effective reflection and transmission at the GaN-sapphire interface of LEDs grown on patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dongxue, Wu; Ping, Ma; Boting, Liu; Shuo, Zhang; Junxi, Wang; Jinmin, Li

2016-10-01

The effect of patterned sapphire substrate (PSS) on the top-surface (P-GaN-surface) and the bottom-surface (sapphire-surface) of the light output power (LOP) of GaN-based LEDs was investigated, in order to study the changes in reflection and transmission of the GaN-sapphire interface. Experimental research and computer simulations were combined to reveal a great enhancement in LOP from either the top or bottom surface of GaN-based LEDs, which are prepared on patterned sapphire substrates (PSS-LEDs). Furthermore, the results were compared to those of the conventional LEDs prepared on the planar sapphire substrates (CSS-LEDs). A detailed theoretical analysis was also presented to further support the explanation for the increase in both the effective reflection and transmission of PSS-GaN interface layers and to explain the causes of increased LOP values. Moreover, the bottom-surface of the PSS-LED chip shows slightly increased light output performance when compared to that of the top-surface. Therefore, the light extraction efficiency (LEE) can be further enhanced by integrating the method of PSS and flip-chip structure design. Project supported by the National High Technology Program of China (No. Y48A040000) and the National High Technology Program of China (No. Y48A040000).

Transition from Irradiation-Induced Amorphization to Crystallization in Nanocrystalline Silicon Carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Weilin; Jiao, Liang; Wang, Haiyan

2011-12-01

Response to irradiation of nanocrystalline 3C-SiC is studied using 2 MeV Au+ ions near the critical temperature for amorphization and is compared to the behavior of its monocrystalline counterpart under the identical irradiation conditions. The irradiated samples have been characterized using in-situ ion channeling, ex-situ x-ray diffraction, and helium ion microscopy. Compared to monocrystalline 3C-SiC, a faster amorphization process in the nanocrystalline material (average grain size = 3.3 nm) is observed at 500 K. However, the nanograin grows with increasing ion fluence at 550 K and the grain size tends to saturate at high fluences. The striking contrast demonstrates amore » sharp transition from irradiation-induced interface-driven amorphization at 500 K to crystallization at 550 K. The results could show potential impacts of nanocrystalline SiC on nuclear fuel cladding and structural components of next-generation nuclear energy systems.« less

Crystal Growth Technology

NASA Astrophysics Data System (ADS)

Scheel, Hans J.; Fukuda, Tsuguo

2004-06-01

This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics:

General aspects of crystal growth technology Silicon Compound semiconductors Oxides and halides Crystal machining Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

NASA Astrophysics Data System (ADS)

Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

2015-01-01

Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

NASA Astrophysics Data System (ADS)

Lu, L. W.; So, C. K.; Zhu, C. Y.; Gu, Q. L.; Li, C. J.; Fung, S.; Brauer, G.; Anwand, W.; Skorupa, W.; Ling, C. C.

2008-09-01

The resistivity of hydrothermally grown ZnO single crystals increased from ~103 Ω cm to ~106 Ω cm after 1.8 MeV electron irradiation with a fluence of ~1016 cm-2, and to ~109 Ω cm as the fluence increased to ~1018 cm-2. Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 1018 cm-2, the normalized TSC signal increased by a factor of ~100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 °C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

Intracavity frequency doubling of a continuous wave Ti:sapphire ring laser and application in resonance Raman spectroscopy of heme protein dynamics

NASA Astrophysics Data System (ADS)

Buchter, Scott C.; Williams, Curtis; Schulte, Alfons; Alekel, Theodore, III; Mizell, Gregory J.; Fay, William R.

1995-04-01

Noncritical temperature-tuned phase-matching and large nonlinear coefficients make potassium niobate an attractive material for frequency doubling tuneable near-infrared radiation. We have mounted a KNbO3 crystal intracavity in an argon ion pumped, continuous wave Ti:Sapphire ring laser to increase the power level of the second harmonic. Wavelength selection at the fundamental frequency is accomplished with a birefringent filter. By using the crystal orientation that defines the d32 coefficient of KNbO3 we have obtained a blue second harmonic output tuneable from 425-445 nm. The laser is also characterized by the narrow linewidth of the Ti:Sapphire ring oscillator and good temporal stability. A continuous wave, frequency doubled Ti:sapphire laser is well suited to excite the resonance Raman spectrum in heme proteins with strong absorption bands in the range of 400 to 450 nm. We demonstrate the feasibility of such a setup for Raman studies of ligand binding to myoglobin. The Raman bands yield information on the reaction dynamics and on conformational changes near the linkage between the heme and the protein. In particular, a shift of the stretch frequency of the iron- histidine bond with high pressure may be attributed to a protein conformational change.

Crystallization of calcium oxalate dihydrate in a buffered calcium-containing glucose solution by irradiation with non-equilibrium atmospheric pressure plasma

NASA Astrophysics Data System (ADS)

Kurake, Naoyuki; Tanaka, Hiromasa; Ishikawa, Kenji; Nakamura, Kae; Kajiyama, Hiroaki; Kikkawa, Fumitaka; Mizuno, Masaaki; Ikehara, Yuzuru; Hori, Masaru

2017-10-01

Oxalate was synthesized in the glucose solution by irradiation with non-equilibrium atmospheric pressure plasma (NEAPP), in which the NEAPP plume contacted the solution surface, via the generation of several intermediate organic products such as gluconic acid. A thermodynamically unstable phase of calcium oxalate dihydrate crystallized rapidly during incubation of a NEAPP-irradiated glucose solution that contained calcium ions and was buffered at neutral pH. Longer irradiation times increased the growth rate and the number of seed crystals.

Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yerci, S.; Serincan, U.; Dogan, I.

2006-10-01

Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 deg. C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. Whilemore » the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.« less

Temperature dependence of sapphire fiber Raman scattering

DOE PAGES

Liu, Bo; Yu, Zhihao; Tian, Zhipeng; ...

2015-04-27

Anti-Stokes Raman scattering in sapphire fiber has been observed for the first time. Temperature dependence of Raman peaks’ intensity, frequency shift, and linewidth were also measured. Three anti-Stokes Raman peaks were observed at temperatures higher than 300°C in a 0.72-m-long sapphire fiber excited by a second-harmonic Nd YAG laser. The intensity of anti-Stokes peaks are comparable to that of Stokes peaks when the temperature increases to 1033°C. We foresee the combination of sapphire fiber Stokes and anti-Stokes measurement in use as a mechanism for ultrahigh temperature sensing.

Final EDP Ti: sapphire amplifiers for ELI project

NASA Astrophysics Data System (ADS)

Chvykov, Vladimir; Kalashnikov, Mikhail; Osvay, Károly

2015-05-01

Recently several ultrahigh intensity Chirped Pulse Amplification (CPA) laser systems have reached petawatt output powers [1, 2] setting the next milestone at tens or even hundreds petawatts for the next three to ten years [3, 4]. These remarkable results were reached when laser amplifiers (opposite to Optical Parametric Amplification (OPA) [5]) were used as final ones and from them Ti:Sapphire crystals supposed to be the working horses as well in the future design of these laser systems. Nevertheless, the main limitation that arises on the path toward ultrahigh output power and intensity is the restriction on the pumping and extraction energy imposed by Transverse Amplified Spontaneous Emission (TASE) [6] and/or transverse parasitic generation (TPG) [7] within the large aperture of the disc-shape amplifier volume.

Statistical Nature of Atomic Disorder in Irradiated Crystals

NASA Astrophysics Data System (ADS)

Boulle, A.; Debelle, A.

2016-06-01

Atomic disorder in irradiated materials is investigated by means of x-ray diffraction, using cubic SiC single crystals as a model material. It is shown that, besides the determination of depth-resolved strain and damage profiles, x-ray diffraction can be efficiently used to determine the probability density function (PDF) of the atomic displacements within the crystal. This task is achieved by analyzing the diffraction-order dependence of the damage profiles. We thereby demonstrate that atomic displacements undergo Lévy flights, with a displacement PDF exhibiting heavy tails [with a tail index in the γ =0.73 - 0.37 range, i.e., far from the commonly assumed Gaussian case (γ =2 )]. It is further demonstrated that these heavy tails are crucial to account for the amorphization kinetics in SiC. From the retrieved displacement PDFs we introduce a dimensionless parameter fDXRD to quantify the disordering. fDXRD is found to be consistent with both independent measurements using ion channeling and with molecular dynamics calculations.

Wafer scale BN on sapphire substrates for improved graphene transport.

PubMed

Vangala, Shivashankar; Siegel, Gene; Prusnick, Timothy; Snure, Michael

2018-06-11

Wafer scale (2") BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO 2 /Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2" BN/sapphire substrates demonstrating scalability and device performance enhancement.

Effects of crystallization interfaces on irradiated ferroelectric thin films

NASA Astrophysics Data System (ADS)

Brewer, S. J.; Williams, S. C.; Cress, C. D.; Bassiri-Gharb, N.

2017-11-01

This work investigates the role of crystallization interfaces and chemical heterogeneity in the radiation tolerance of chemical solution-deposited lead zirconate titanate (PZT) thin films. Two sets of PZT thin films were fabricated with crystallization performed at (i) every deposited layer or (ii) every three layers. The films were exposed to a range of 60Co gamma radiation doses, between 0.2 and 20 Mrad, and their functional response was compared before and after irradiation. The observed trends indicate enhancements of dielectric, ferroelectric, and piezoelectric responses at low radiation doses and degradation of the same at higher doses. Response enhancements are expected to result from low-dose (≤2 Mrad), ionizing radiation-induced charging of internal interfaces—an effect that results in neutralization of pre-existing internal bias in the samples. At higher radiation doses (>2 Mrad), accumulation and self-ordering of radiation-modified, mobile, oxygen vacancy-related defects contribute to degradation of dielectric, ferroelectric, and piezoelectric properties, exacerbated in the samples with more crystallization layers, potentially due to increased defect accumulation at these internal interfaces. These results suggest that the interaction between radiation and crystallization interfaces is multifaceted—the effects of ionization, domain wall motion, point defect mobility, and microstructure are considered.

Features of the structural states of KNbO{sub 3} single crystals before and after fast-neutron irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stash, A. I., E-mail: astas@yandex.ru; Ivanov, S. A.; Stefanovich, S. Yu.

Neutron irradiation is a unique tool for forming new structural states of ferroelectrics, which cannot be obtained by conventional methods. The inf luence of the irradiation by two doses of fast neutrons (F = 1 × 10{sup 17} and 3 × 10{sup 17} cm{sup –2}) on the structure and properties of KNbO{sub 3} single crystals has been considered for the first time. The developed method for taking into account the experimental correction to the diffuse scattering has been used to analyze the structural changes occurring in KNbO{sub 3} samples at T = 295 K and their correlations with the behaviormore » of dielectric and nonlinear optical characteristics. The irradiation to the aforementioned doses retains the KNbO{sub 3} polar structure, shifting Т{sub Ð}¡ to lower temperatures and significantly affecting only the thermal parameters and microstructure of single crystals. Neutron irradiation with small atomic displacements provides a structure similar to the high-temperature modification of an unirradiated KNbO{sub 3} crystal.« less

Controllable laser thermal cleavage of sapphire wafers

NASA Astrophysics Data System (ADS)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Electron Beam Welder Used to Braze Sapphire to Platinum

NASA Technical Reports Server (NTRS)

Forsgren, Roger C.; Vannuyen, Thomas

1998-01-01

A new use for electron beam brazing was recently developed by NASA Lewis Research Center's Manufacturing Engineering Division. This work was done to fabricate a fiberoptic probe (developed by Sentec Corporation) that could measure high temperatures less than 600 deg C of vibrating machinery, such as in jet engine combustion research. Under normal circumstances, a sapphire fiber would be attached to platinum by a ceramic epoxy. However, no epoxies can adhere ceramic fibers to platinum under such high temperatures and vibration. Also, since sapphire and platinum have different thermal properties, the epoxy bond is subjected to creep over time. Therefore, a new method had to be developed that would permanently and reliably attach a sapphire fiber to platinum. Brazing a sapphire fiber to a platinum shell. The fiber-optic probe assembly consists of a 0.015-in.-diameter sapphire fiber attached to a 0.25-in.-long, 0.059-in.-diameter platinum shell. Because of the small size of this assembly, electron beam brazing was chosen instead of conventional vacuum brazing. The advantage of the electron beam is that it can generate a localized heat source in a vacuum. Gold reactive braze was used to join the sapphire fiber and the platinum. Consequently, the sapphire fiber was not affected by the total heat needed to braze the components together.

RBS/Channeling Studies of Swift Heavy Ion Irradiated GaN Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sathish, N.; Dhamodaran, S.; Pathak, A. P.

2009-03-10

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with 150 MeV Ag ions at a fluence of 5x10{sup 12} ions/cm{sup 2}. Samples used in this study are 2 {mu}m thick GaN layers, with and without a thin AlN cap-layer. Energy dependent RBS/Channeling measurements have been carried out on both irradiated and unirradiated samples for defects characterization. Observed results are compared and correlated with previous HRXRD, AFM and optical studies. The {chi}{sub min} values for unirradiated samples show very high value and the calculated defect densities are of the order of 10{sup 10} cm{sup -2} as expectedmore » in these samples. Effects of irradiation on these samples are different as initial samples had different defect densities. Epitaxial reconstruction of GaN buffer layer has been attributed to the observed changes, which are generally grown to reduce the strain between GaN and Sapphire.« less

An electron paramagnetic resonance study on irradiated triphenylphosphinselenid single crystal

NASA Astrophysics Data System (ADS)

Aras, Erdal; Karatas, Ozgul; Meric, Yasemin; Abbass, Hind Kh; Birey, Mehmet; Kilic, Ahmet

2014-09-01

The single crystals of triphenylphosphinselenid [C18H15PSe] were produced by slow evaporation of concentrated ethyl acetate solutions. These single crystals were exposed to 60Co gamma (γ) rays with a dose speed of 0.980 kGy/h at the room temperature for 72 h. The free radical over the sample was observed using electron paramagnetic resonance (EPR)-X band spectrometer. The EPR spectra were recorded between 120 and 400 K. Furthermore, the sample irradiated was rotated in steps of 10° and analyzed for different orientations of the crystal in the magnetic field. Only one radical structure was determined on the molecule. The hyperfine constants of the sample were found to be anisotropic. The average values of these constants and value of g were calculated as following: g=2.007656, aSe=37.47 G, aP=27.44 G, aHa=17.28 G, and aHb=18.16 G.

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Asif Khan, M.; Skogman, R. A.; Van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 °C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 °C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. To the best of our knowledge this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

Surface structure modification of single crystal graphite after slow, highly charged ion irradiation

NASA Astrophysics Data System (ADS)

Alzaher, I.; Akcöltekin, S.; Ban-d'Etat, B.; Manil, B.; Dey, K. R.; Been, T.; Boduch, P.; Rothard, H.; Schleberger, M.; Lebius, H.

2018-04-01

Single crystal graphite was irradiated by slow, highly charged ions. The modification of the surface structure was studied by means of Low-Energy Electron Diffraction. The observed damage cross section increases with the potential energy, i.e. the charge state of the incident ion, at a constant kinetic energy. The potential energy is more efficient for the damage production than the kinetic energy by more than a factor of twenty. Comparison with earlier results hints to a strong link between early electron creation and later target atom rearrangement. With increasing ion fluence, the initially large-scale single crystal is first transformed into μ m-sized crystals, before complete amorphisation takes place.

Electron beam irradiation induced changes in liquid-crystal compound 5CB

NASA Astrophysics Data System (ADS)

Rath, M. C.; Sarkar, S. K.; Wadhawan, V. K.; Verma, R.; Das, I. M. L.; Dąbrowski, R.; Tykarska, M.; Dhar, R.

2008-12-01

Electron beam irradiation studies on liquid crystal material 5CB have been carried out at a temperature where the compound exists in the isotropic liquid phase. In situ time-resolved spectroscopic characterization was carried out during the irradiation. Three different transients were observed during the 2-μs electron pulse. After about 50 μs, only one transient species was found to be present, which has an absorption peak at 360 nm. Radiolysed sample exhibits a broad absorption at ˜400 nm. The dielectric measurements show that even a low level of irradiation results in a dramatic increase in the component of dielectric permittivity normal to the long axes of the molecules ɛ⊥', and a corresponding decrease in the dielectric anisotropy (Δɛ'=ɛ∥'-ɛ⊥' ). These studies show that 5CB is prone to substantial radiation damage on exposure to the beam of high-energy electrons.

Effects of γ-ray irradiation on optical absorption and laser damage performance of KDP crystals containing arsenic impurities.

PubMed

Guo, D C; Jiang, X D; Huang, J; Wang, F R; Liu, H J; Xiang, X; Yang, G X; Zheng, W G; Zu, X T

2014-11-17

The effects of γ-irradiation on potassium dihydrogen phosphate crystals containing arsenic impurities are investigated with different optical diagnostics, including UV-VIS absorption spectroscopy, photo-thermal common-path interferometer and photoluminescence spectroscopy. The optical absorption spectra indicate that a new broad absorption band near 260 nm appears after γ-irradiation. It is found that the intensity of absorption band increases with the increasing irradiation dose and arsenic impurity concentration. The simulation of radiation defects show that this absorption is assigned to the formation of AsO₄⁴⁻ centers due to arsenic ions substituting for phosphorus ions. Laser-induced damage threshold test is conducted by using 355 nm nanosecond laser pulses. The correlations between arsenic impurity concentration and laser induced damage threshold are presented. The results indicate that the damage performance of the material decreases with the increasing arsenic impurity concentration. Possible mechanisms of the irradiation-induced defects formation under γ-irradiation of KDP crystals are discussed.

Oleophobic properties of the step-and-terrace sapphire surface

NASA Astrophysics Data System (ADS)

Muslimov, A. E.; Butashin, A. V.; Kanevsky, V. M.

2017-03-01

Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical-mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel-Deryagin homogeneous wetting model.

Oleophobic properties of the step-and-terrace sapphire surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M.

Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of themore » surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.« less

Statistical Nature of Atomic Disorder in Irradiated Crystals.

PubMed

Boulle, A; Debelle, A

2016-06-17

Atomic disorder in irradiated materials is investigated by means of x-ray diffraction, using cubic SiC single crystals as a model material. It is shown that, besides the determination of depth-resolved strain and damage profiles, x-ray diffraction can be efficiently used to determine the probability density function (PDF) of the atomic displacements within the crystal. This task is achieved by analyzing the diffraction-order dependence of the damage profiles. We thereby demonstrate that atomic displacements undergo Lévy flights, with a displacement PDF exhibiting heavy tails [with a tail index in the γ=0.73-0.37 range, i.e., far from the commonly assumed Gaussian case (γ=2)]. It is further demonstrated that these heavy tails are crucial to account for the amorphization kinetics in SiC. From the retrieved displacement PDFs we introduce a dimensionless parameter f_{D}^{XRD} to quantify the disordering. f_{D}^{XRD} is found to be consistent with both independent measurements using ion channeling and with molecular dynamics calculations.

Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

NASA Astrophysics Data System (ADS)

Carroz, L.; Duffar, T.

2018-05-01

In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

NASA Astrophysics Data System (ADS)

Maskell, P.; Oram, L.

The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

Lattice damage assessment and optical waveguide properties in LaAlO3 single crystal irradiated with swift Si ions

NASA Astrophysics Data System (ADS)

Liu, Y.; Crespillo, M. L.; Huang, Q.; Wang, T. J.; Liu, P.; Wang, X. L.

2017-02-01

As one of the representative ABO3 perovskite-structured oxides, lanthanum aluminate (LaAlO3) crystal has emerged as one of the most valuable functional-materials, and has attracted plenty of fundamental research and promising applications in recent years. Electronic, magnetic, optical and other properties of LaAlO3 strongly depend on its crystal structure, which could be strongly modified owing to the nuclear or electronic energy loss deposited in an ion irradiation environment and, therefore, significantly affecting the performance of LaAlO3-based devices. In this work, utilizing swift (tens of MeV) Si-ion irradiation, the damage behavior of LaAlO3 crystal induced by nuclear or electronic energy loss has been studied in detail utilizing complementary characterization techniques. Differing from other perovskite-structured crystals in which the electronic energy loss could lead to the formation of an amorphous region based on the thermal spike mechanism, in this case, intense electronic energy loss in LaAlO3 will not induce any obvious structural damage. The effects of ion irradiation on the mechanical properties, including hardness increase and elastic modulus decrease, have been confirmed. On the other hand, considering the potential applications of LaAlO3 in the field of integrated optoelectronics, the optical-waveguide properties of the irradiation region have been studied. The significant correspondence (symmetrical inversion) between the iWKB-reconstructed refractive-index profile and SRIM-simulated dpa profile further proves the effects (irradiation-damage production and refractive-index decrease) of nuclear energy loss during the swift-ion penetration process in LaAlO3 crystal. In the case of the rather-thick damage layer produced by swift-ion irradiation, obtaining a damage profile will be constrained owing to the analysis-depth limitation of the characterization techniques (RBS/channeling), and our analysis process (optical guided-mode measurement and

Carrier envelope offset frequency detection and stabilization of a diode-pumped mode-locked Ti:sapphire laser.

PubMed

Gürel, Kutan; Wittwer, Valentin J; Hakobyan, Sargis; Schilt, Stéphane; Südmeyer, Thomas

2017-03-15

We demonstrate the first diode-pumped Ti:sapphire laser frequency comb. It is pumped by two green laser diodes with a total pump power of 3 W. The Ti:sapphire laser generates 250 mW of average output power in 61-fs pulses at a repetition rate of 216 MHz. We generated an octave-spanning supercontinuum spectrum in a photonic-crystal fiber and detected the carrier envelope offset (CEO) frequency in a standard f-to-2f interferometer setup. We stabilized the CEO-frequency through direct current modulation of one of the green pump diodes with a feedback bandwidth of 55 kHz limited by the pump diode driver used in this experiment. We achieved a reduction of the CEO phase noise power spectral density by 140 dB at 1 Hz offset frequency. An advantage of diode pumping is the ability for high-bandwidth modulation of the pump power via direct current modulation. After this experiment, we studied the modulation capabilities and noise properties of green pump laser diodes with improved driver electronics. The current-to-output-power modulation transfer function shows a bandwidth larger than 1 MHz, which should be sufficient to fully exploit the modulation bandwidth of the Ti:sapphire gain for CEO stabilization in future experiments.

Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

2016-11-01

Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

High power continuous-wave titanium:sapphire laser

DOEpatents

Erbert, G.V.; Bass, I.L.; Hackel, R.P.; Jenkins, S.L.; Kanz, V.K.; Paisner, J.A.

1993-09-21

A high-power continuous-wave laser resonator is provided, wherein first, second, third, fourth, fifth and sixth mirrors form a double-Z optical cavity. A first Ti:sapphire rod is disposed between the second and third mirrors and at the mid-point of the length of the optical cavity, and a second Ti:sapphire rod is disposed between the fourth and fifth mirrors at a quarter-length point in the optical cavity. Each Ti:sapphire rod is pumped by two counter-propagating pump beams from a pair of argon-ion lasers. For narrow band operation, a 3-plate birefringent filter and an etalon are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors are disposed between the first and second mirrors to form a triple-Z optical cavity. A third Ti:sapphire rod is disposed between the seventh and eighth mirrors at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers. 5 figures.

Factors affecting color strength of printing on film-coated tablets by UV laser irradiation: TiO2 particle size, crystal structure, or concentration in the film, and the irradiated UV laser power.

PubMed

Hosokawa, Akihiro; Kato, Yoshiteru

2011-08-01

The purpose of this article is to study factors affecting color strength of printing on film-coated tablets by ultraviolet (UV) laser irradiation: particle size, crystal structure, or concentration of titanium dioxide (TiO2) in film, and irradiated UV laser power. Hydroxypropylmethylcellulose films containing 4.0% of TiO2, of which BET particle sizes were ranging from 126.1 to 219.8 nm, were irradiated 3.14W of UV laser at a wavelength 355 nm to study effects of TiO2 particle size and crystal structure on the printing. The films containing TiO2 concentration ranging from 1.0 to 7.7% were irradiated 3.14 or 5.39W of the UV laser to study effect of TiO2 concentration on the printing. The film containing 4.0% of TiO2, was irradiated the UV laser up to 6.42W to study effect of the UV laser power on the printing. The color strength of the printed films was estimated by a spectrophotometer as total color difference (dE). Particle size, crystal structure, and concentration of TiO2 in the films did not affect the printing. In the relationship between the irradiated UV laser power and dE, there found an inflection point (1.6W). When the UV laser power was below 1.6W, the films were not printed. When it was beyond the point, total color difference increased linearly in proportion with the irradiated laser power. The color strength of the printing on film was not changed by TiO2 particle size, crystal structure, and concentration, but could be controlled by regulating the irradiated UV laser power beyond the inflection point.

Photomultiplier window materials under electron irradiation - Fluorescence and phosphorescence

NASA Technical Reports Server (NTRS)

Viehmann, W.; Eubanks, A. G.; Pieper, G. F.; Bredekamp, J. H.

1975-01-01

The fluorescence and phosphorescence of photomultiplier window materials under electron irradiation have been investigated using a Sr-90/Y-90 beta emitter as the electron source. Spectral emission curves of UV-grade, optical-grade, and electron-irradiated samples of MgF2 and LiF, and of CaF2, BaF2, sapphire, fused silica, and UV-transmitting glasses were obtained over the 200-650-nm spectral range. Fluorescence yields were determined on these materials utilizing photomultiplier tubes with cesium telluride, bialkali, and trialkali (S-20) photocathodes, respectively. Optical-grade MgF2 and LiF, as well as electron-irradiated UV-grade samples of these two materials, show enhanced fluorescence due to color-center formation and associated emission bands in the blue and red wavelength regions. Large variations in fluorescence intensities were found in UV-grade sapphire samples of different origins, particularly in the red end of the spectrum, presumably due to various amounts of chromium-ion content. Phosphorescence decay with time is best described by a sum of exponential terms, with time constants ranging from a few minutes to several days.

Formation of metal nanoparticles in MgF2, CaF2 and BaF2 crystals under the electron beam irradiation

NASA Astrophysics Data System (ADS)

Bochkareva, Elizaveta S.; Sidorov, Alexander I.; Yurina, Uliana V.; Podsvirov, Oleg A.

2017-07-01

It is shown experimentally that electron beam action with electrons energies of 50 and 70 keV on MgF2, CaF2 and BaF2 crystals results in local formation in the crystal near-surface layer of Mg, Ca or Ba nanoparticles which possess plasmon resonance. In the case of MgF2 spheroidal nanoparticles are formed, in the cases of CaF2 and BaF2 - spherical. The formation of metal nanoparticles is confirmed by computer simulation in dipole quasistatic approximation. The dependence of absorption via electron irradiation dose is non-linear. It is caused by the increase of nanoparticles concentration and by the increase of nanoparticles sizes during irradiation. In the irradiated zones of MgF2 crystals, for irradiation doses less than 80 mC/cm2, the intense luminescence in a visible range appears. The practical application of fabricated composite materials for multilevel optical information recording is discussed.

Ion irradiation-induced crystal structure changes in inverse spinel MgIn 2O 4

DOE PAGES

Tang, Ming; Valdez, James A.; Wang, Yongqiang; ...

2016-07-29

We performed 400 keV Ne and 200 keV He ion irradiations on fully inverse MgIn 2O 4 samples at cryogenic temperature (~ 77 K), in order to examine the influence of radiation-induced cation disordering on crystal structure. In the case of MgIn 2O 4 samples irradiated with Ne ions to a peak displacement damage dose of 4 displacements per atom (dpa), a spinel-to-rocksalt phase transformation was observed. Conversely, for MgIn 2O 4 samples irradiated with He ions to a peak displacement damage dose of 5 dpa, the only observed structural effect involved cation rearrangements from an inverse to a “random”more » spinel structure.« less

Nanostructured sapphire optical fiber for sensing in harsh environments

NASA Astrophysics Data System (ADS)

Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

2017-05-01

We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

Fluorescence-based remote irradiation sensor in liquid-filled hollow-core photonic crystal fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeltner, R.; Russell, P. St.J.; Department of Physics, University of Erlangen-Nuremberg, Guenther-Scharowsky-Str. 1, 91058 Erlangen

2016-06-06

We report an irradiation sensor based on a fluorescent “flying particle” that is optically trapped and propelled inside the core of a water-filled hollow-core photonic crystal fiber. When the moving particle passes through an irradiated region, its emitted fluorescence is captured by guided modes of the fiber core and so can be monitored using a filtered photodiode placed at the fiber end. The particle speed and position can be precisely monitored using in-fiber Doppler velocimetry, allowing the irradiation profile to be measured to a spatial resolution of ∼10 μm. The spectral response can be readily adjusted by appropriate choice of particlemore » material. Using dye-doped polystyrene particles, we demonstrate detection of green (532 nm) and ultraviolet (340 nm) light.« less

High power continuous-wave titanium:sapphire laser

DOEpatents

Erbert, Gaylen V.; Bass, Isaac L.; Hackel, Richard P.; Jenkins, Sherman L.; Kanz, Vernon K.; Paisner, Jeffrey A.

1993-01-01

A high-power continuous-wave laser resonator (10) is provided, wherein first, second, third, fourth, fifth and sixth mirrors (11-16) form a double-Z optical cavity. A first Ti:Sapphire rod (17) is disposed between the second and third mirrors (12,13) and at the mid-point of the length of the optical cavity, and a second Ti:Sapphire rod (18) is disposed between the fourth and fifth mirrors (14,15) at a quarter-length point in the optical cavity. Each Ti:Sapphire rod (17,18) is pumped by two counter-propagating pump beams from a pair of argon-ion lasers (21-22, 23-24). For narrow band operation, a 3-plate birefringent filter (36) and an etalon (37) are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors (101, 192) are disposed between the first and second mirrors (11, 12) to form a triple-Z optical cavity. A third Ti:Sapphire rod (103) is disposed between the seventh and eighth mirrors (101, 102) at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers (104, 105).

Self-phase modulation of submicrojoule femtosecond pulses in a hollow-core photonic-crystal fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Konorov, S.O.; Sidorov-Biryukov, D.A.; Zheltikov, A.M.

Hollow-core photonic-crystal fibers (PCFs) capable of transporting sub-100-fs pulses of Ti:sapphire laser radiation in one of their transmission peaks centered around 800 nm have been designed and demonstrated. These fibers are shown to enhance self-phase modulation of submicrojoule 100-fs Ti:sapphire laser pulses, allowing a spectral bandwidth of 35 nm to be achieved with an 8-cm PCF sample.

Effect of electron beam irradiation on thermal and crystallization behavior of PP/EPDM blend

NASA Astrophysics Data System (ADS)

Balaji, Anand Bellam; Ratnam, Chantara Thevy; Khalid, Mohammad; Walvekar, Rashmi

2017-12-01

The irradiation stability of ethylene-propylene diene terpolymer (EPDM)/ polypropylene (PP) blends is studied in an attempt to develop radiation compatible PP/EPDM blends suitable for medical applications. The PP/EPDM blends with mixing ratios of 80/20, 50/50/ 20/80 were prepared in an internal mixer at 165 °C and a rotor speed of 50 rpm followed by compression molding. The blends and the individual components were irradiated using 3.0 MeV electron beam (EB) accelerator at doses ranging from 0 to 100 kGy in air and room temperature. Later, the PP/EPDM blends were subjected to gel content, thermal stability, crystallization and dynamic mechanical properties before and after irradiation. Results revealed that the irradiation-induced crosslinking in the PP/EPDM blend increases with the increasing irradiation dose and the EPDM content in the blend. However, the thermal stability of the blends did not show any significant changes upon irradiation. The dynamic mechanical analysis shows that the EPDM rich blend has higher compatibility than PP dominant blends. A further improvement in the blend compatibility found to be achieved upon irradiation.

Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

NASA Astrophysics Data System (ADS)

Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

2016-03-01

High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

Shear strength of metal-sapphire contacts

NASA Technical Reports Server (NTRS)

Pepper, S. V.

1976-01-01

The shear strength of polycrystalline Ag, Cu, Ni, and Fe contacts on clean (0001) sapphire has been studied in ultrahigh vacuum. Both clean metal surfaces and surfaces exposed to O2, Cl2, and C2H4 were used. The results indicate that there are two sources of strength of Al2O3-metal contacts: an intrinsic one that depends on the particular clean metal in contact with Al2O3 and an additional one due to intermediate films. The shear strength of the clean metal contacts correlated directly with the free energy of oxide formation for the lowest metal oxide, in accord with the hypothesis that a chemical bond is formed between metal cations and oxygen anions in the sapphire surface. Contacts formed by metals exposed to chlorine exhibited uniformly low shear strength indicative of van der Waals bonding between chlorinated metal surfaces and sapphire. Contacts formed by metals exposed to oxygen exhibited enhanced shear strength, in accord with the hypothesis that an intermediate oxide layer increases interfacial strength.

Tunable, continuous-wave Ti:sapphire channel waveguide lasers written by femtosecond and picosecond laser pulses.

PubMed

Grivas, Christos; Corbari, Costantino; Brambilla, Gilberto; Lagoudakis, Pavlos G

2012-11-15

Fabrication and cw lasing at 798.25 nm is reported for femtosecond (fs) and picosecond (ps) laser-inscribed channel waveguides in Ti:sapphire crystals. Lasing in channels written by fs (ps) pulses was obtained above a threshold of 84 mW (189 mW) with a maximum output power and a slope efficiency of 143 mW (45 mW) and 23.5% (7.1%), respectively. The emission wavelength was tuned over a 170 nm range by using a birefringent filter in an external cavity.

Progress on 10 Kelvin cryo-cooled sapphire oscillator

NASA Technical Reports Server (NTRS)

Wang, Rabi T.; Dick, G. John; Diener, William A.

2004-01-01

We present recent progress on the 10 Kelvin Cryocooled Sapphire Oscillator (10K CSO). Included are incorporation of a new pulse tube cryocooler, cryocooler vibration comparisons between G-M and pulse-tube types, phase noise, and frequency stability tests. For the advantage of a single stage pulse tube cryocooler, we also present results for a 40K Compensated Sapphire Oscillator (40K CSO).

The near-infrared waveguide properties of an LGS crystal formed by swift Kr8+ ion irradiation

NASA Astrophysics Data System (ADS)

Zhou, Yu-Fan; Liu, Peng; Liu, Tao; Zhang, Lian; Sun, Jian-Rong; Wang, Zhi-Guang; Wang, Xue-Lin

2013-11-01

In this work, we report on the optical properties in the near-infrared region of a LGS crystal planar waveguide formed by swift heavy ion irradiation. The planar optical waveguide in a LGS crystal was fabricated by 330 MeV Kr8+-ion implantation at a fluence of 1 × 1012 cm-2. The initial beam had an energy of 2.1 GeV and was slowed down by passing it through a 259 μm thick Al foil. The guided mode was measured using a prism coupler at a wavelength of 1539 nm. The near-field intensity distribution of the mode was recorded by a CCD camera using the end-face coupling method. The FD-BPM was used to simulate the guided mode profile. The lattice damage induced by SHI irradiation in the LGS crystal was studied using micro-Raman spectroscopy. The Raman spectra are consistent with the stopping power distributions of the Kr8+ ions simulated by SRIM and with the micro-photograph of the waveguide taken by a microscope using polarized light.

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

NASA Astrophysics Data System (ADS)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-12-01

Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

NASA Astrophysics Data System (ADS)

Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Lan, Ding; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin

2014-02-01

Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

NASA Astrophysics Data System (ADS)

Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

2017-09-01

Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

Molecular dynamics simulation of fast particle irradiation on the single crystal CeO2

NASA Astrophysics Data System (ADS)

Sasajima, Y.; Ajima, N.; Osada, T.; Ishikawa, N.; Iwase, A.

2013-11-01

We used a molecular dynamics method to simulate structural relaxation caused by the high-energy-ion irradiation of single crystal CeO2. As the initial condition, we assumed high thermal energy was supplied to the individual atoms within a cylindrical region of nanometer-order diameter located in the center of the single crystal. The potential proposed by Inaba et al. was utilized to calculate interactions between atoms [H. Inaba, R. Sagawa, H. Hayashi, K. Kawamura, Solid State Ionics 122 (1999) 95-103]. The supplied thermal energy was first spent to change the crystal structure into an amorphous one within a short period of about 0.3 ps, then it was dissipated in the crystal. We compared the obtained results with those of computer simulations for UO2 and found that CeO2 was more stable than UO2 when supplied with high thermal energy.

Reliability improvement methods for sapphire fiber temperature sensors

NASA Astrophysics Data System (ADS)

Schietinger, C.; Adams, B.

1991-08-01

Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

Picosecond temporal contrast of Ti:Sapphire lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kalashnikov, Mikhail P.; Khodakovskiy, Nikita

2017-05-01

The temporal shape of recompressed Ti:sapphire CPA pulses typically contains relatively long pre- and post- pedestals appearing on a picosecond time scale. Despite playing a key role in laser-matter interactions, these artifacts - especially the shape of the leading front of the recompressed pulses - are poorly investigated and understood. The related publications consider picosecond pedestals appearing at both fronts of the main pulse to be related to scattering of the stretched pulse off diffraction gratings inside the stretcher or due to clipping of the pulse spectrum at dielectric coatings. In our experiments we analyzed different types of stretcher-compressor combinations used in Ti:Sapphire laser systems. These include a prism-based stretcher and a bulk compressor, transmission and reflection diffraction gratings - based combinations. We identified pedestals that are typical for the particular stretcher-compressor combination. Especially investigated are those which are coherent with the major recompressed pulse, since with self-phase modulation in power amplifiers they will grow nonlinearly and finally appear symmetric around the major pulse, generating the pre-pedestal from the post-pedestal. Thus, a previously unreported influence of the trailing pedestal has been identified. It is commonly known that recompressed pulses from Ti:sapphire chirped-pulse amplifier systems are accompanied by a slowly decaying ragged post-pedestal. The detailed investigation shows that it consists of numerous pulses with temporal separation in the picosecond range. These are coherent with the main pulse. Moreover, the temporal structure of the trailing pedestal is independent of the particular realization of the Ti:sapphire system and it is present in radiation of any Ti:Sapphire CPA system including Kerr- mode locked master oscillators. Our investigations show that the coherent ragged post-pedestal is the post-radiation of inverted Ti:sapphire medium resulting from phonon

The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

NASA Technical Reports Server (NTRS)

Pisciotta, B. P.; Gross, C.

1976-01-01

Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

Fast crystallization of amorphous Gd{sub 2}Zr{sub 2}O{sub 7} induced by thermally activated electron-beam irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Zhangyi; Qi, Jianqi, E-mail: qijianqi@scu.edu.cn; Zhou, Li

2015-12-07

We investigate the ionization and displacement effects of an electron-beam (e-beam) on amorphous Gd{sub 2}Zr{sub 2}O{sub 7} synthesized by the co-precipitation and calcination methods. The as-received amorphous specimens were irradiated under electron beams at different energies (80 keV, 120 keV, and 2 MeV) and then characterized by X-ray diffraction and transmission electron microscopy. A metastable fluorite phase was observed in nanocrystalline Gd{sub 2}Zr{sub 2}O{sub 7} and is proposed to arise from the relatively lower surface and interface energy compared with the pyrochlore phase. Fast crystallization could be induced by 120 keV e-beam irradiation (beam current = 0.47 mA/cm{sup 2}). The crystallization occurred on the nanoscale upon ionizationmore » irradiation at 400 °C after a dose of less than 10{sup 17} electrons/cm{sup 2}. Under e-beam irradiation, the activation energy for the grain growth process was approximately 10 kJ/mol, but the activation energy was 135 kJ/mol by calcination in a furnace. The thermally activated ionization process was considered the fast crystallization mechanism.« less

Solid solutions of gadolinium doped zinc oxide nanorods by combined microwave-ultrasonic irradiation assisted crystallization

NASA Astrophysics Data System (ADS)

Kiani, Armin; Dastafkan, Kamran; Obeydavi, Ali; Rahimi, Mohammad

2017-12-01

Nanocrystalline solid solutions consisting of un-doped and gadolinium doped zinc oxide nanorods were fabricated by a modified sol-gel process utilizing combined ultrasonic-microwave irradiations. Polyvinylpyrrolidone, diethylene glycol, and triethylenetetramine respectively as capping, structure directing, and complexing agents were used under ultrasound dynamic aging and microwave heating to obtain crystalline nanorods. Crystalline phase monitoring, lattice parameters and variation, morphology and shape, elemental analysis, functional groups, reducibility, and the oxidation state of emerged species were examined by PXRD, FESEM, TEM, EDX, FTIR, micro Raman, H2-TPR, and EPR techniques. Results have verified that irradiation mechanism of gelation and crystallization reduces the reaction time, augments the crystal quality, and formation of hexagonal close pack structure of Wurtzite morphology. Besides, dissolution of gadolinium within host lattice involves lattice deformation, unit cell distortion, and angular position variation. Structure related shape and growth along with compositional purity were observed through microscopic and spectroscopic surveys. Furthermore, TPR and EPR studies elucidated more detailed behavior upon exposure to the exerted irradiations and subsequent air-annealing including the formed oxidation states and electron trapping centers, presence of gadolinium, zinc, and oxygen disarrays and defects, as well as alteration in the host unit cell via gadolinium addition.

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub

2015-01-26

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-fieldmore » split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.« less

Effect of proton irradiation on superconductivity in optimally doped BaFe 2 ( As 1 - x P x ) 2 single crystals

DOE PAGES

Smylie, M. P.; Leroux, M.; Mishra, V.; ...

2016-03-10

In this paper, irradiation with 4 MeV protons was used to systematically introduce defects in single crystals of the iron-arsenide superconductor BaFe 2(As 1-xP x) 2, x = 0.33. The effect of disorder on the low-temperature behavior of the London penetration depth λ(T) and transition temperature T c was investigated. In nearly optimally doped samples with T c ~ 29 K, signatures of a superconducting gap with nodes were observed. Contrary to previous reports on electron-irradiated crystals, we do not see a disorder-driven lifting of accidental nodes, and we observe that proton-induced defects are weaker pair breakers than electron-induced defects.more » Finally, we attribute our findings to anisotropic electron scattering caused by proton irradiation defects.« less

Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Hai; Tsai, Hai-Lung; Dong, Junhang

2014-09-30

This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologiesmore » that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.« less

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hao; Li, Yufeng; Wang, Shuai

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%.more » Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.« less

Failure Analysis of Sapphire Refractive Secondary Concentrators

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Quinn, George D.

2009-01-01

Failure analysis was performed on two sapphire, refractive secondary concentrators (RSC) that failed during elevated temperature testing. Both concentrators failed from machining/handling damage on the lens face. The first concentrator, which failed during testing to 1300 C, exhibited a large r-plane twin extending from the lens through much of the cone. The second concentrator, which was an attempt to reduce temperature gradients and failed during testing to 649 C, exhibited a few small twins on the lens face. The twins were not located at the origin, but represent another mode of failure that needs to be considered in the design of sapphire components. In order to estimate the fracture stress from fractographic evidence, branching constants were measured on sapphire strength specimens. The fractographic analysis indicated radial tensile stresses of 44 to 65 MPa on the lens faces near the origins. Finite element analysis indicated similar stresses for the first RSC, but lower stresses for the second RSC. Better machining and handling might have prevented the fractures, however, temperature gradients and resultant thermal stresses need to be reduced to prevent twinning.

Neurosurgical sapphire handheld probe for intraoperative optical diagnostics, laser coagulation and aspiration of malignant brain tissue

NASA Astrophysics Data System (ADS)

Shikunova, Irina A.; Zaytsev, Kirill I.; Stryukov, Dmitrii O.; Dubyanskaya, Evgenia N.; Kurlov, Vladimir N.

2017-07-01

In this paper, a handheld contact probe based on sapphire shaped crystal was developed for the intraoperative optical diagnosis and aspiration of malignant brain tissue combined with the laser hemostasis. Such a favorable combination of several functions in a single instrument significantly increases its clinical relevance. It makes possible highly-accurate real-time detection and removal of either large-scale malignancies or even separate invasive cancer cells. The proposed neuroprobe was integrated into the clinical neurosurgical workflow for the intraoperative fluorescence identification and removal of malignant tissues of the brain.

Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

DOE PAGES

Backus, Sterling; Durfee, Charles; Lemons, Randy; ...

2017-02-10

Here, we report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-uJ energies with repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as themore » solutions to these challenges.« less

Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Backus, Sterling; Durfee, Charles; Lemons, Randy

Here, we report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-uJ energies with repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as themore » solutions to these challenges.« less

Optimizing Ti:Sapphire laser for quantitative biomedical imaging

NASA Astrophysics Data System (ADS)

James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

2018-02-01

Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

Spatially resolved nuclear spin relaxation, electron spin relaxation and light absorption in swift heavy ion irradiated LiF crystals.

PubMed

Stork, H; Dinse, K-P; Ditter, M; Fujara, F; Masierak, W; Neumann, R; Schuster, B; Schwartz, K; Trautmann, C

2010-05-12

Spatially resolved (19)F and (7)Li spin-lattice relaxation rates are measured for LiF single crystals after irradiation with two kinds of swift heavy ions ((12)C of 133 MeV and (208)Pb of 1.78 GeV incident energy). Like in earlier studies on (130)Xe and (238)U irradiated LiF crystals, we found a strong enhancement of the nuclear spin-lattice relaxation rate within the ion penetration depth and a slight--but still significant--enhancement beyond. By evaluating the nuclear relaxation rate enhancement within the ion range after irradiation with different projectiles, a universal relationship between the spin-lattice relaxation rate and the dose is deduced. The results of accompanying X-band electron paramagnetic resonance relaxation measurements and optical absorption spectroscopy are included in a physical interpretation of this relationship. Also the reason for the enhanced relaxation rate beyond the ion range is further discussed.

EPR and photoluminescence study of irradiated anion-defective alumina single crystals

NASA Astrophysics Data System (ADS)

Kortov, V. S.; Ananchenko, D. V.; Konev, S. F.; Pustovarov, V. A.

2017-09-01

Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectra of anion-defective alumina single crystals were measured. Exposure to a dose 10 Gy-1 kGy causes isotropic EPR signal of a complex form, this signal contains narrow and broad components. At the same time, in the PL spectrum alongside with a band of F+-centers (3.8 eV) an additional emission band with the maximum of 2.25 eV is registered. This band corresponds to aggregate F22+-centers which were create under irradiation. By comparing measurements in EPR and PL spectra with further stepped annealing in the temperature range of 773-1473 K of the samples exposed to the same doses, we were able to conclude that a narrow component of isotropic EPR signal is associated with the formation of paramagnetic F22+-centers under irradiation. A wide component can be caused by deep hole traps which are created by a complex defect (VAl2- - F+) with a localized hole.

Femtosecond laser-induced periodic surface structural formation on sapphire with nanolayered gold coating

NASA Astrophysics Data System (ADS)

Yin, Kai; Wang, Cong; Duan, Ji'an; Guo, Chunlei

2016-09-01

Sapphire has a potential as a new generation of electronics display. However, direct processing of sapphire surface by visible or near-IR laser light is challenging since sapphire is transparent to these wavelengths. In this study, we investigate the formation of femtosecond laser-induced periodic surface structures (LIPSSs) on sapphire coated with nanolayered gold film. We found a reduced threshold by about 25 % in generating uniform LIPSSs on sapphire due to the nanolayered gold film. Different thickness of nanolayered gold films are studied, and it is shown that the change in thickness does not significantly affect the threshold reduction. It is believed that the diffusion of hot electrons in the gold films increases interfacial carrier density and electron-phonon coupling that results in a reduced threshold and more uniform periodic surface structure generation.

Comparison of luminescence property of gamma-ray irradiated Tb3+ -doped and Ce3+ co-doped potassium halide single crystals.

PubMed

Bangaru, S; Ravi, D; Saradha, K

2017-05-01

Single crystals of KCl and KBr singly and doubly doped with Tb 3 + and Ce 3 + , respectively, were successfully grown using the Bridgeman technique. This work reports the comparative luminescence behavior and optical absorption characterization of non-irradiated and γ-ray-irradiated single crystals of these materials. The existing defect and the defect created by γ-ray irradiation were monitored by optical absorption spectra. The excitation and emission spectra of these materials were measured at room temperature with a spectrofluorometer and the pertaining results were compared. The F-band comparison was made when bleached with F-light for 2 mins. The trap-level changes in KCl and KBr when it is singly and doubly doped enabled us to draw conclusions on the nature of the defect and on the recombination processes involved. Copyright © 2016 John Wiley & Sons, Ltd.

Laser welding of fused silica glass with sapphire using a non- stoichiometric, fresnoitic Ba2TiSi2O8·3 SiO2 thin film as an absorber

NASA Astrophysics Data System (ADS)

de Pablos-Martín, A.; Lorenz, M.; Grundmann, M.; Höche, Th.

2017-07-01

Laser welding of dissimilar materials is challenging, due to their difference in coefficients of thermal expansion (CTE). In this work, fused silica-to-sapphire joints were achieved by employment of a ns laser focused in the intermediate Si-enriched fresnoitic glass thin film sealant. The microstructure of the bonded interphase was analyzed down to the nanometer scale and related to the laser parameters used. The crystallization of fresnoite in the glass sealant upon laser process leads to an intense blue emission intensity under UV excitation. This crystallization is favored in the interphase with the silica glass substrate, rather than in the border with the sapphire. The formation of SiO2 particles was confirmed, as well. The bond quality was evaluated by scanning acoustic microscopy (SAM). The substrates remain bonded even after heat treatment at 100 °C for 30 min, despite the large CTE difference between both substrates.

Defect analysis of the LED structure deposited on the sapphire substrate

NASA Astrophysics Data System (ADS)

Nie, Qichu; Jiang, Zhimin; Gan, Zhiyin; Liu, Sheng; Yan, Han; Fang, Haisheng

2018-04-01

Transmission electron microscope (TEM) and double-crystal X-ray diffraction (DCXRD) measurements have been performed to investigate dislocations of the whole structure of the LED layers deposited on both the conventional (unpatterned sapphire substrate, UPSS) and patterned sapphire substrates (PSS). TEM results show that there exists a dislocation-accumulated region near the substrate/GaN interface, where the dislocation density is much higher with the UPPS than that with the PSS. It indicates that the pattern on the substrate surface is able to block the formation and propagation of dislocations. Further analysis discloses that slope of the pattern is found to suppress the deposition of GaN, and thus to provide more spaces for the epitaxially lateral overgrowth (ELO) of high temperature GaN, which significantly reduces the number of the initial islands, and minimizes dislocation formation due to the island coalescence. V-defect incorporating the threading dislocation is detected in the InGaN/GaN multi-quantum wells (MQWs), and its propagation mechanism is determined as the decrease of the surface energy due to the incorporation of indium. In addition, temperature dependence of dislocation formation is further investigated. The results show that dislocation with the screw component decreases monotonously as temperature goes up. However, edge dislocation firstly drops, and then increases by temperature due to the enhanced thermal mismatch stress. It implies that an optimized range of the growth temperature can be obtained to improve quality of the LED layers.

High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

NASA Technical Reports Server (NTRS)

Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

1997-01-01

A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

Characterization of high energy Xe ion irradiation effects in single crystal molybdenum with depth-resolved synchrotron microbeam diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Di; Miao, Yinbin; Xu, Ruqing

2016-04-01

Microbeam X-ray diffraction experiments were conducted at beam line 34-ID of the Advanced Photon Source (APS) on fission fragment energy Xe heavy ion irradiated single crystal Molybdenum (Mo). Lattice strain measurements were obtained with a depth resolution of 0.7 mu m, which is critical in resolving the peculiar heterogeneity of irradiation damage associated with heavy ion irradiation. Q-space diffraction peak shift measurements were correlated with lattice strain induced by the ion irradiations. Transmission electron microscopy (TEM) characterizations were performed on the as-irradiated materials as well. Nanometer sized Xe bubble microstructures were observed via TEM. Molecular Dynamics (MD) simulations were performedmore » to help interpret the lattice strain measurement results from the experiment. This study showed that the irradiation effects by fission fragment energy Xe ion irradiations can be collaboratively understood with the depth resolved X-ray diffraction and TEM measurements under the assistance of MD simulations. (c) 2015 Elsevier B.V. All rights reserved.« less

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wang, Junxi

2014-02-15

Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, themore » external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.« less

Site location and optical properties of Eu implanted sapphire

NASA Astrophysics Data System (ADS)

Marques, C.; Wemans, A.; Maneira, M. J. P.; Kozanecki, A.; da Silva, R. C.; Alves, E.

2005-10-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 × 1016 cm-2. Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 °C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 °C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements.

The influence of crystal structure on ion-irradiation tolerance in the Sm(x)Yb(2-x)TiO5 series

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aughterson, R. D.; Lumpkin, G. R.; de los Reyes, M.

2016-04-01

his ion-irradiation study covers the four major crystal structure types in the Ln(2)TiO(5) series (Ln = lanthanide), namely orthorhombic Pnma, hexagonal P63/mmc, cubic (pyrochlore-like) Fd-3m and cubic (fluorite-like) Fm-3m. This is the first systematic examination of the complete Ln(2)TiO(5) crystal system and the first reported examination of the hexagonal structure. A series of samples, based on the stoichiometry Sm(x)Yb(2-x)TiO5 (where x = 2, 1.4, 1, 0.6, and 0) have been irradiated using 1 MeV Kr2+ ions and characterised in-situ using a transmission electron microscope. Two quantities are used to define ion-irradiation tolerance: critical dose of amorphisation (D-c), which is themore » irradiating ion dose required for a crystalline to amorphous transition, and the critical temperature (T-c), above which the sample cannot be rendered amorphous by ion irradiation. The structure type plus elements of bonding are correlated to ion-irradiation tolerance. The cubic phases, Yb2TiO5 and Sm0.6Yb1.4TiO5, were found to be the most radiation tolerant, with Tc values of 479 and 697 K respectively. The improved radiation tolerance with a change in symmetry to cubic is consistent with previous studies of similar compounds.« less

Materials Chemistry Issues in the Development of a Single-Crystal Solar/Thermal Refractive Secondary Concentrator

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Biering, Robert C.

2005-01-01

A translucent crystal concentrates and transmits energy to a heat exchanger, which in turn heats a propellant gas, working gas of a dynamic power system, or a thermopile. Materials are the limiting issue in such a system. Central is the durability of the crystal, which must maintain the required chemical, physical/optical, and mechanical properties as it is heated and cooled. This report summarizes available data to date on the materials issues with this system. We focus on the current leading candidate materials, which are sapphire (Al2O3) for higher temperatures and silica (SiO2) for lower temperatures. We use data from thermochemical calculations; laboratory coupon tests with silica and sapphire; and system tests with sapphire. The required chemical properties include low-vapor pressure and interfacial stability with supporting structural materials. Optical properties such as transmittance and index of refraction must be maintained. Thermomechanical stability is a major challenge for a large, single-crystal ceramic and has been discussed in another report. In addition to the crystal, other materials in the proposed system include refractory metals (Nb, Ta, Mo, W, and Re), carbon (C), and high-temperature ceramic insulation. The major issue here is low levels of oxygen, which lead to volatile refractory metal oxides and rapid consumption of the refractory metal. Interfacial reactions between the ceramic crystal and refractory metal are also discussed. Finally, high-temperature ceramic insulating materials are also likely to be used in this system. Outgassing is a major issue for these materials. The products of outgassing are typically reactive with the refractory metals and must be minimized.

Molecular-orbital model for metal-sapphire interfacial strength

NASA Technical Reports Server (NTRS)

Johnson, K. H.; Pepper, S. V.

1982-01-01

Self-consistent-field X-Alpha scattered-wave cluster molecular-orbital models have been constructed for transition and noble metals (Fe, Ni, Cu, and Ag) in contact with a sapphire (Al2O3) surface. It is found that a chemical bond is established between the metal d-orbital electrons and the nonbonding 2p-orbital electrons of the oxygen anions on the Al2O3 surface. An increasing number of occupied metal-sapphire antibonding molecular orbitals explains qualitatively the observed decrease of contact shear strength through the series Fe, Ni, Cu, and Ag.

Toward single-mode active crystal fibers for next-generation high-power fiber devices.

PubMed

Lai, Chien-Chih; Gao, Wan-Ting; Nguyen, Duc Huy; Ma, Yuan-Ron; Cheng, Nai-Chia; Wang, Shih-Chang; Tjiu, Jeng-Wei; Huang, Chun-Ming

2014-08-27

We report what we believe to be the first demonstration of a facile approach with controlled geometry for the production of crystal-core ceramic-clad hybrid fibers for scaling fiber devices to high average powers. The process consists of dip coating a solution of polycrystalline alumina onto a high-crystallinity 40-μm-diameter Ti:sapphire single-crystalline core followed by thermal treatments. Comparison of the measured refractive index with high-resolution transmission electron microscopy reveals that a Ca/Si-rich intragranular layer is precipitated at grain boundaries by impurity segregation and liquid-phase formation due to the relief of misfit strain energy in the Al2O3 matrix, slightly perturbing the refractive index and hence the optical properties. Additionally, electron backscatter diffractions supply further evidence that the Ti:sapphire single-crystalline core provides the template for growth into a sacrificial polycrystalline cladding, bringing the core and cladding into a direct bond. The thus-prepared doped crystal core with the undoped crystal cladding was achieved through the abnormal grain-growth process. The presented results provide a general guideline both for controlling crystal growth and for the performance of hybrid materials and provides insights into how one might design single-mode high-power crystal fiber devices.

Radiation damage in vitamin B 1: An endor study of an x-irradiated single crystal of thiamine

NASA Astrophysics Data System (ADS)

Geoffroy, M.; Reddy, M. V. V. S.; Lambelet, P.; Horman, I.

A single crystal of thiamine chloride hydrochloride has been x-irradiated at room temperature and studied by 1H-ENDOR spectroscopy at 110 K. It is shown that at least two radical species are trapped in the crystal. Several 1H-hyperfine tensors have been determined for each radical; they indicate that one species is due to cleavage of the thiamine molecule into its pyrimidine and thiazole moieties while the other species is due to hydrogen addition onto the pyrimidine ring.

Single-Crystal Antimonene Films Prepared by Molecular Beam Epitaxy: Selective Growth and Contact Resistance Reduction of the 2D Material Heterostructure.

PubMed

Chen, Hsuan-An; Sun, Hsu; Wu, Chong-Rong; Wang, Yu-Xuan; Lee, Po-Hsiang; Pao, Chun-Wei; Lin, Shih-Yen

2018-05-02

Single-crystal antimonene flakes are observed on sapphire substrates after the postgrowth annealing procedure of amorphous antimony (Sb) droplets prepared by using molecular beam epitaxy at room temperature. The large wetting angles of the antimonene flakes to the sapphire substrate suggest that an alternate substrate should be adopted to obtain a continuous antimonene film. By using a bilayer MoS 2 /sapphire sample as the new substrate, a continuous and single-crystal antimonene film is obtained at a low growth temperature of 200 °C. The results are consistent with the theoretical prediction of the lower interface energy between antimonene and MoS 2 . The different interface energies of antimonene between sapphire and MoS 2 surfaces lead to the selective growth of antimonene only atop MoS 2 surfaces on a prepatterned MoS 2 /sapphire substrate. With similar sheet resistance to graphene, it is possible to use antimonene as the contact metal of 2D material devices. Compared with Au/Ti electrodes, a specific contact resistance reduction up to 3 orders of magnitude is observed by using the multilayer antimonene as the contact metal to MoS 2 . The lower contact resistance, the lower growth temperature, and the preferential growth to other 2D materials have made antimonene a promising candidate as the contact metal for 2D material devices.

Fabrication of planar waveguide in KNSBN crystal by swift heavy ion beam irradiation

NASA Astrophysics Data System (ADS)

Guan, Jing; Wang, Lei; Qin, Xifeng

2013-11-01

We report on the fabrication of the planar waveguides in the KNSBN crystal by using 17 MeV C5+ ions at a fluence of 2 × 1014 ions/cm2. After implantation, near surface regions of the crystal, there has a positive extraordinary refractive index (ne) change and the light inside the waveguides can propagate in a non-leaky manner. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the reconstructed modal distributions. The propagation loss for C5+ irradiated waveguide is ∼0.8 dB/cm at 633 nm and ∼0.72 dB/cm at 1064 nm. The waveguide gives good confinement of waveguide modes, which exhibits acceptable guiding qualities for potential applications in integrated optics.

Hydrogen defects in α-Al2O3 and water weakening of sapphire and alumina ceramics between 600°C and 1000°C: II. Mechanical properties

USGS Publications Warehouse

Castaing, J.; Kronenberg, A.K.; Kirby, S.H.; Mitchell, T.E.

2000-01-01

Hydrogen impurities in alumina have been introduced by hydrothermal annealing (see part I). In this paper, we report on reductions in the flow strength of α-Al2O3 single crystals and polycrystals associated with hydrogen incorporation. Prior to deformation, α-Al2O3 single crystal and ceramic specimens were annealed in the presence of supercritical water at 850° or 900°C, under 1500 MPa pressure. Sapphire and alumina ceramics were plastically deformed between 600° and 1000°C under 1500 MPa pressure, by the addition of a uniaxial stress. Flow stresses are reduced by a factor of two, due to the presence of water, for sapphire and large grain (30–50 μm) polycrystals, as a result of enhanced dislocation mobility. Flow stresses of fine-grained (3–5 μm) polycrystals are reduced by water by a factor of six. This large reduction in strength is attributed to a change in mechanism from dislocation glide under dry conditions to grain boundary sliding under hydrothermal conditions.

Surface modification of LiNbO3 and KTa1-xNbxO3 crystals irradiated by intense pulsed ion beam

NASA Astrophysics Data System (ADS)

Cui, Xiaojun; Shen, Jie; Zhong, Haowen; Zhang, Jie; Yu, Xiao; Liang, Guoying; Qu, Miao; Yan, Sha; Zhang, Xiaofu; Le, Xiaoyun

2017-10-01

In this work, we studied the surface modification of LiNbO3 and KTa1-xNbxO3 irradiated by intense pulsed ion beam, which was mainly composed of H+ (70%) and Cn+ (30%) at an acceleration voltage of about 450 kV. The surface morphologies, microstructural evolution and elemental analysis of the sample surfaces after IPIB irradiation have been analyzed by scanning electron microscope, atomic force microscope, X-ray diffraction and energy dispersive spectrometer techniques, respectively. The results show that the surface morphologies have significant difference impacted by the irradiation effect. Regular gully damages range from 200 to 400 nm in depth appeared in LiNbO3 under 2 J/cm2 energy density for 1 pulse, block cracking appeared in KTa1-xNbxO3 at the same condition. Surface of the crystals have melted and were darkened with the increasing number up to 5 pulses. Crystal lattice arrangement is believed to be the dominant reason for the different experimental results irradiated by intense pulsed ion beam.

The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam

NASA Astrophysics Data System (ADS)

Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun

2017-10-01

Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.

Growth and laser properties of Nd:Ca 4YO(BO 3) 3 crystal

NASA Astrophysics Data System (ADS)

Zhang, H. J.; Meng, X. L.; Zhu, L.; Wang, C. Q.; Cheng, R. P.; Yu, W. T.; Zhang, S. J.; Sun, L. K.; Chow, Y. T.; Zhang, W. L.; Wang, H.; Wong, K. S.

1999-02-01

Nd:Ca 4YO(BO 3) 3 (Nd:YCOB) crystal was grown by the Czochralski method, and its structure was measured by using a four circle X-ray diffractometer. The transparent spectrum from 200 to 2600 nm was measured at room temperature. The fluorescence spectrum near 1.06 μm showed that the main emission wavelength of Nd:YCOB crystal was centered at 1060.8 nm. Laser output at 1.06 μm has been demonstrated when it was pumped by a Ti:sapphire laser at the wavelength of 794 nm, the highest output power was 68 mW under pumping power of 311 mW, the pumping threshold was 163 mW and slope efficiency was 46.9%. The self-frequency doubled green light has been observed when it was pumped by a Ti:sapphire or a laser diode (LD). A 14.5 mm Nd:YCOB crystal sample cut at ( θ, φ)=(90°, 33°) was used for type I second-frequency generation (SHG) of the 1.06 μm laser pulse. The SHG conversion efficiency was 22%.

[The design of all solid-state tunable pulsed Ti:sapphire laser system].

PubMed

Chen, Zhe; Ku, Geng; Wan, Junchao; Wang, Wei; Zhou, Chuanqing

2013-05-01

This paper presented a design of broadly all solid-state tunable pulsed Ti:sapphire laser with high power and stable performance. The laser was pumped by custom-made Nd:YAG laser which had water cooling system and amplified by two stage amplifier. The method accomplished tunable output of all solid-state tunable pulsed Ti:sapphire laser by modifying the reflection angle of the back mirror. We investigated the relationship between the power of the pumping laser and the all solid-state tunable pulsed Ti: sapphire laser by changing the power of the pumping source.

DPSSL pumped 20-TW Ti:sapphire laser system for DD fusion experiment

NASA Astrophysics Data System (ADS)

Sekine, T.; Hatano, Y.; Takeuchi, Y.; Kawashima, T.

2016-03-01

A diode-pumped solid-state laser (DPSSL) pumped 20-TW output Ti:sapphire laser system has been developed. A diode-pumped Nd:glass laser with output energy of 12.7 J in 527 nm was used as a pump source for a 20-TW Ti:sapphire amplifier. A CeLiB6O10 nonlinear optical crystal was used as a frequency doubler of the Nd:glass DPSSL[1]. Figure 1 shows typical output pulse energy of the 20-TW amplifier as a function of pumping energy and a near field pattern. A 1.65 J pulse energy was obtained by 4.5 J pump energy. The amplified seed pulse is compressed to typically 60 fs as shown in Fig. 1 by a vacuumed pulse compressor with 80% of transmissivity. Encircled energy ratio, into a circled with 8 μm diameter area, of far field pattern focused by off-axis parabolic mirror with F# of 3 is numerically evaluated to 40% at TW class output condition. Then focal intensity would reach to 1018W/cm2. This all- DPSSL system contributes for stable and continual investigation of laser induced plasma experiment. We have succeeded continual and high efficient generation of DD fusion neutron from CD nano-particles by cluster fusion scheme using the 20-TW laser. A yield of ∼105 neutrons per shot was stably observed during continuous 100 shots with repetition rate of 0.1Hz.

Femtosecond laser irradiation of olivine single crystals: Experimental simulation of space weathering

NASA Astrophysics Data System (ADS)

Fazio, A.; Harries, D.; Matthäus, G.; Mutschke, H.; Nolte, S.; Langenhorst, F.

2018-01-01

Space weathering is one of the most common surface process occurring on atmosphere-free bodies such as asteroids and the Moon. It is caused mainly by solar wind irradiation and the impact of micrometeoroids. In order to simulate space weathering effects, in particular those produced by hypervelocity impacts, we produced microcraters via ultra-short (∼100 fs) laser irradiation of crystallographically oriented slices of forsterite-rich (Fo94.7) olivine. The main advantages of the application of a femtosecond laser radiation to reproduce the space weathering effects are (1) the high peak irradiance (1015 W cm-2), which generates the propagation of the shock wave at the nanosecond timescale (i.e., timescale of the micrometeoroid impacts); (2) the rapid transfer of energy to the target material, which avoids the interaction of laser light with the developing vapor plume; (3) a small laser beam, which allows the effects of a single impact to be simulated. The results of our spectroscopic and electron microscopic investigation validate this approach: the samples show strong darkening and reddening of the reflectance spectra and structural damages similar to the natural microcraters found on regolith grains of the Moon and asteroid 25143 Itokawa. Detailed investigations of several microcrater cross-sections by transmission electron microscopy allowed the detection of shock-induced defect microstructures. From the top to the bottom of the grain, the shock wave causes evaporation, melting, solid-state recrystallization, misorientation, fracturing, and the propagation of dislocations with Burgers vectors parallel to [001]. The formation of a short-lived vapor plume causes the kinetic fractionation of the gas and the preferential loss of lighter elements, mostly magnesium and oxygen. The high temperatures within the melt layer and the kinetic loss of oxygen promote the thermal reduction of iron and nickel, which leads to the formation of metallic nanoparticles (npFe0). The

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE PAGES

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2017-11-15

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

Irradiation-induced defect formation and damage accumulation in single crystal CeO2

NASA Astrophysics Data System (ADS)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2018-01-01

The accumulation of irradiation-induced disorder in single crystal CeO2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO2 thin films using 2 MeV Au2+ ions were carried out up to a total fluence of 1.3 ×1016 cm-2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes in correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

Zn nanoparticle formation in FIB irradiated single crystal ZnO

NASA Astrophysics Data System (ADS)

Pea, M.; Barucca, G.; Notargiacomo, A.; Di Gaspare, L.; Mussi, V.

2018-03-01

We report on the formation of Zn nanoparticles induced by Ga+ focused ion beam on single crystal ZnO. The irradiated materials have been studied as a function of the ion dose by means of atomic force microscopy, scanning electron microscopy, Raman spectroscopy and transmission electron microscopy, evidencing the presence of Zn nanoparticles with size of the order of 5-30 nm. The nanoparticles are found to be embedded in a shallow amorphous ZnO matrix few tens of nanometers thick. Results reveal that ion beam induced Zn clustering occurs producing crystalline particles with the same hexagonal lattice and orientation of the substrate, and could explain the alteration of optical and electrical properties found for FIB fabricated and processed ZnO based devices.

Investigations of gain redshift in high peak power Ti:sapphire laser systems

NASA Astrophysics Data System (ADS)

Wu, Fenxiang; Yu, Linpeng; Zhang, Zongxin; Li, Wenkai; Yang, Xiaojun; Wu, Yuanfeng; Li, Shuai; Wang, Cheng; Liu, Yanqi; Lu, Xiaoming; Xu, Yi; Leng, Yuxin

2018-07-01

Gain redshift in high peak power Ti:sapphire laser systems can result in narrowband spectral output and hence lengthen the compressed pulse duration. In order to realize broadband spectral output in 10 PW-class Ti:sapphire lasers, the influence on gain redshift induced by spectral pre-shaping, gain distribution of cascaded amplifiers and Extraction During Pumping (EDP) technique have been investigated. The theoretical and experimental results show that the redshift of output spectrum is sensitive to the spectral pre-shaping and the gain distribution of cascaded amplifiers, while insensitive to the pumping scheme with or without EDP. Moreover, the output spectrum from our future 10 PW Ti:sapphire laser is theoretically analyzed based on the investigations above, which indicates that a Fourier-transform limited (FTL) pulse duration of 21 fs can be achieved just by optimizing the spectral pre-shaping and gain distribution in 10 PW-class Ti:sapphire lasers.

Krypton ion irradiation-induced amorphization and nano-crystal formation in pyrochlore Lu2Ti2O7 at room temperature

NASA Astrophysics Data System (ADS)

Xie, Qiu-Rong; Zhang, Jian; Yin, Dong-Min; Guo, Qi-Xun; Li, Ning

2015-12-01

Polycrystalline pyrochlore Lu2Ti2O7 pellets are irradiated with 600-keV Kr3+ ions up to a fluence of 1.45 × 1016 Kr3+/cm2. Irradiation induced structural modifications are examined by using grazing incidence x-ray diffraction (GIXRD) and cross-sectional transmission electron microscopy (TEM). The GIXRD reveals that amorphous fraction increases with the increase of fluences up to 2 × 1015 Kr3+/cm2, and the results are explained with a direct-impact model. However, when the irradiation fluence is higher than 2 × 1015 Kr3+/cm2, the amorphous fraction reaches a saturation of ∼80%. Further TEM observations imply that nano-crystal is formed with a diameter of ∼10 nm within the irradiation layer at a fluence of 4 × 1015 Kr3+/cm2. No full amorphization is achieved even at the highest fluence of 1.45 × 1016 Kr3+/cm2 (∼36 displacement per atom). The high irradiation resistance of pyrochlore Lu2Ti2O7 at higher fluence is explained on the basis of enhanced radiation tolerance of nano-crystal structure. Project sponsored by the National Natural Science Foundation of China (Grant No. 11205128) and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012121034).

Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development

NASA Technical Reports Server (NTRS)

Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.

2003-01-01

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.

Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

NASA Astrophysics Data System (ADS)

Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

1982-05-01

This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

Effects of neutron and electron irradiation on superconducting HgBa 2CuO 4+ δ single crystals

NASA Astrophysics Data System (ADS)

Zehetmayer, M.; Eisterer, M.; Kazakov, S. M.; Karpinski, J.; Wisniewski, A.; Puzniak, R.; Daignere, A.; Weber, H. W.

2004-08-01

We report on measurements of the magnetic moment in superconducting HgBa 2CuO 4+ δ single crystals by SQUID magnetometry. Neutron and electron irradiation are employed to modify the defect structure. Both types of radiation affect the irreversible properties, but characteristic qualitative differences occur, which will be discussed.

Hybrid Physical-Chemical Vapor Deposition of Bi2Se3 Thin films on Sapphire

NASA Astrophysics Data System (ADS)

Brom, Joseph; Ke, Yue; Du, Renzhong; Gagnon, Jarod; Li, Qi; Redwing, Joan

2012-02-01

High quality thin films of topological insulators continue to garner much interest. We report on the growth of highly-oriented thin films of Bi2Se3 on c-plane sapphire using hybrid physical-chemical vapor deposition (HPCVD). The HPCVD process utilizes the thermal decomposition of trimethyl bismuth (TMBi) and evaporation of elemental selenium in a hydrogen ambient to deposit Bi2Se3. Growth parameters including TMBi flow rate and decomposition temperature and selenium evaporation temperature were optimized, effectively changing the Bi:Se ratio, to produce high quality films. Glancing angle x- ray diffraction measurements revealed that the films were c-axis oriented on sapphire. Trigonal crystal planes were observed in atomic force microscopy images with an RMS surface roughness of 1.24 nm over an area of 2μmx2μm. Variable temperature Hall effect measurements were also carried out on films that were nominally 50-70 nm thick. Over the temperature range from 300K down to 4.2K, the carrier concentration remained constant at approximately 6x10^18 cm-3 while the mobility increased from 480 cm^2/Vs to 900 cm^2/Vs. These results demonstrate that the HPCVD technique can be used to deposit Bi2Se3 films with structural and electrical properties comparable to films produced by molecular beam epitaxy.

Supercrystallization of KCl from solution irradiated by soft X-rays

NASA Astrophysics Data System (ADS)

Janavičius, A. J.; Rinkūnas, R.; Purlys, R.

2016-10-01

The X-rays influence on KCl crystallization in a saturated water solution has been investigated for the aim of comparing it with previously considered NaCl crystallization. The rate of crystallization has been measured in the drying drop in the solution activated by the irradiation. We have measured the influence of the irradiation time of the solution on the rates of KCl crystallization as well as the beginning of the crystallization processes on drying drops. For a longer irradiation time of the solution early crystallization in the drops occurs. A saturated water solution of KCl was irradiated with the diffractometer DRON-3M (Russian device) and this had a great influence on the two-step processes of crystallization. The ionization of the solution by soft X-rays can produce ions, metastable radicals in water, excited crystals' seeds and vacancies in growing crystals by Auger's effect. The X-rays generate a very fast crystallization in the drying drop.

Growth and characterizations of various GaN nanostructures on C-plane sapphire using laser MBE

NASA Astrophysics Data System (ADS)

Ch., Ramesh; Tyagi, P.; Maurya, K. K.; Kumar, M. Senthil; Kushvaha, S. S.

2017-05-01

We have grown various GaN nanostructures such as three-dimensional islands, nanowalls and nanocolumns on c-plane sapphire substrates using laser assisted molecular beam epitaxy (LMBE) system. The shape of the GaN nanostructures was controlled by using different nucleation surfaces such as bare and nitridated sapphire with GaN or AlN buffer layers. The structural and surface morphological properties of grown GaN nanostructures were characterized by ex-situ high resolution x-ray diffraction, Raman spectroscopy and field emission scanning electron microscopy. The symmetric x-ray rocking curve along GaN (0002) plane shows that the GaN grown on pre-nitridated sapphire with GaN or AlN buffer layer possesses good crystalline quality compared to sapphire without nitridation. The Raman spectroscopy measurements revealed the wurtzite phase for all the GaN nanostructures grown on c-sapphire.

Sapphire Viewports for a Venus Probe

NASA Technical Reports Server (NTRS)

Bates, Stephen

2012-01-01

A document discusses the creation of a viewport suitable for use on the surface of Venus. These viewports are rated for 500 C and 100 atm pressure with appropriate safety factors and reliability required for incorporation into a Venus Lander. Sapphire windows should easily withstand the chemical, pressure, and temperatures of the Venus surface. Novel fixture designs and seals appropriate to the environment are incorporated, as are materials compatible with exploration vessels. A test cell was fabricated, tested, and leak rate measured. The window features polish specification of the sides and corners, soft metal padding of the sapphire, and a metal C-ring seal. The system safety factor is greater than 2, and standard mechanical design theory was used to size the window, flange, and attachment bolts using available material property data. Maintenance involves simple cleaning of the window aperture surfaces. The only weakness of the system is its moderate rather than low leak rate for vacuum applications.

Oxygen vacancy-induced room-temperature ferromagnetism in D—D neutron irradiated single-crystal TiO2 (001) rutile

NASA Astrophysics Data System (ADS)

Xu, Nan-Nan; Li, Gong-Ping; Pan, Xiao-Dong; Wang, Yun-Bo; Chen, Jing-Sheng; Bao, Liang-Man

2014-10-01

Remarkable room temperature ferromagnetism in pure single-crystal rutile TiO2 (001) samples irradiated by D—D neutron has been investigated. By combining X-ray diffraction and positron annihilation lifetime, the contracted lattice has been clearly identified in irradiated TiO2, where Ti4+ ions can be easily reduced to the state of Ti3+. As there were no magnetic impurities that could contaminate the samples during the whole procedure, some Ti3+ ions reside on interstitial or substituted sites accompanied by oxygen vacancies should be responsible for the ferromagnetism.

Femtosecond deep-infrared optical parametric oscillator pumped directly by a Ti:sapphire laser

NASA Astrophysics Data System (ADS)

O'Donnell, Callum; Chaitanya Kumar, S.; Zawilski, Kevin T.; Schunemann, Peter G.; Ebrahim-Zadeh, Majid

2018-02-01

We report a high-repetition-rate femtosecond optical parametric oscillator (OPO) for the deep-infrared (deep-IR) based on the nonlinear optical crystal, CdSiP2 (CSP), pumped directly by a Ti:sapphire laser, for the first time. By pumping CSP at <1 μm, we have achieved practical output powers at the longest wavelengths generated by any Ti:sapphire-pumped OPO. Using a combination of pump wavelength tuning, type-I critical phase-matching, and cavity delay tuning, we have generated continuously tunable radiation across 6654-8373 nm (1194-1503 cm-1) at 80.5 MHz repetition rate, providing up to 20 mW of average power at 7314 nm and <7 mW beyond 8000 nm, with idler spectra exhibiting bandwidths of 140-180 nm across the tuning range. Moreover, the near-IR signal is tunable across 1127-1192 nm, providing up to 37 mW of average power at 1150 nm. Signal pulses, characterised using intensity autocorrelation, have durations of 260-320 fs, with corresponding time-bandwidth product of ΔυΔτ 1. The idler and signal output exhibit a TEM00 spatial profile with single-peak Gaussian distribution. With an equivalent spectral brightness of 6.68×1020 photons s-1 mm-2 sr-1 0.1% BW-1, this OPO represents a viable table-top alternative to synchrotron and supercontinuum sources for deep-IR applications in spectroscopy, metrology and medical diagnostics.

Fluorescence and phosphorescence of photomultiplier window materials under electron irradiation

NASA Technical Reports Server (NTRS)

Viehmann, W.; Eubanks, A. G.; Bredekamp, J. H.

1974-01-01

The fluorescence and phosphorescence of photomultiplier window materials under electron irradiation were investigated using a Sr-90/Y-90 beta emitter as the electron source. Spectral emission curves of UV grade, optical grade, and electron-irradiated samples of MGF2 and LiF, CaF2, BaF2, sapphire, fused silica, and UV transmitting glasses were obtained over the spectral range of 200 nm to 650 nm. Fluorescence yields, expressed as the number of counts in a solid angle of 2 pi steradian per 1MeV of incident electron energy deposited, were determined on these materials utilizing photomultiplier tubes with cesium telluride, bialkali, and trialkali (S-20) photocathodes, respectively.

[Evaluation of the Abbott Cell-Dyn Sapphire hematology analyzer].

PubMed

Park, Younhee; Song, Jaewoo; Song, Sungwook; Song, Kyung Soon; Ahn, Mee Suk; Yang, Mi-Sook; Kim, Il; Choi, Jong Rak

2007-06-01

The performance of Cell-Dyn Sapphire (Abbott Diagnostic, USA) was compared to the Bayer Advia 2120 (Bayer Diagnostics, USA), Sysmex XE-2100 (Sysmex Corporation, Japan), and reference microscopy. Three hundred samples for routine CBC and WBC differentials were randomly chosen for a comparison analysis. The Cell-Dyn Sapphire system was evaluated according to the linearity, imprecision, inter-instrument correlations, and white blood cell differential. The CBC parameters (WBC, RBC, hemoglobin and platelet) showed a significant linearity with correlation coefficients greater than 0.99 (P<0.0001). Coefficients of variation (CV) for within-run and differential count of WBC were less than 5% except for Total CV for monocytes, eosinophils, and basophils and within-run CV for low valued eosinophils. The correlation coefficients with manual count were lower in monocytes, eosinophils, and basophils than in neutrophils and lymphocytes. The correlation with other hematology anlayzers was significant exclusive of basophils. These results demonstrate that the Cell-Dyn Sapphire has a good linearity, an acceptable reproducibility, a minimal carryover, and a comparable performance with the sysmex XE-2100 and Advia 2120.

In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001].

PubMed

Murdey, Richard; Sato, Naoki

2011-06-21

The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive material forms below about 5 nm and again above 35 nm, but in the intermediate thicknesses the film conductance was observed to decrease with increasing film thickness. With the aid of ac-AFM topology images taken ex situ, the conductance results are explained based on the Stranski-Krastanov (2D + 3D) film growth mechanism, in which the formation of a thin wetting layer is followed by the growth of discrete islands that eventually coalesce into an interpenetrating, conductive network. © 2011 American Institute of Physics

Progress Report for a New Cryogenic Sapphire Oscillator

NASA Technical Reports Server (NTRS)

Wang, Rabi T.; Dick, G. J.; Tjoelker, R. L.

2006-01-01

We present design progress and subsystem test results for a new short-term frequency standard, the Voltage Controlled Sapphire Oscillator (VCSO). Included are sapphire resonator and coupling design, cryocooler environmental sensitivity tests, Q measurement results, and turnover temperature results. A previous report presented history of the design related to resonator frequency and frequency compensation [1]. Performance goals are a frequency stability of 1x10(exp -14) (1 second less than or equal to (tau) less than or equal to 100 seconds) and two years or more continuous operation. Long-term operation and small size are facilitated by use of a small Stirling cryo-cooler (160W wall power) with an expected 5 year life.

Optical and structural properties of Nd:MgO:LiNbO3 crystal irradiated by 2.8-MeV He ions

NASA Astrophysics Data System (ADS)

Jia, Chuan-Lei; Li, Song; Song, Xiao-Xiao

2017-07-01

We report the optical and structural properties of helium-implanted optical waveguides in Nd:MgO:LiNbO3 laser crystals. The prism-coupling method is used to investigate the dark-mode properties at the wavelength of 632.8 nm. The spontaneous generation of ultraviolet, blue, red, and near-infrared fluorescence emissions is demonstrated under excitation with an 808-nm laser diode. The effects of ion irradiation on the structural properties are characterized using the high-resolution X-ray diffraction technique. The results show that the initial luminescence properties of Nd:MgO:LiNbO3 crystals are slightly modified by irradiation with 2.8 MeV He ions at fluences of 1.5 × 1016 ions/cm2 at room temperature.

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

PubMed Central

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

2017-01-01

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1–2 × 109 cm−2, which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 109 cm−2). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices. PMID:28772961

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy.

PubMed

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

2017-05-31

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1-2 × 10⁸ cm -2 , which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 10⁸ cm -2 ). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices.

Magneto-optical study of Ba(Fe{sub 1-x}M{sub x}{sub 2}As{sub2} (M = Co and Ni) single crystals irradiated with heavy ions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prozorov, R.; Tanatar, M. A.; Roy, B.

Optimally doped single crystals of Ba(Fe{sub 1-x}M{sub x}){sub 2}As{sub 2} (M=Co, Ni) were irradiated with 1.4 GeV {sup 208}Pb{sup 56+} ions at fluences corresponding to matching fields of B{phi} = 0.1, 0.5, 1, and 2 T. Magneto-optical imaging has been used to map the distribution of the magnetic induction in the irradiated samples. The imaging is complemented by the magnetization measurements. The results show a substantial enhancement of the apparent critical current densities as revealed by the much larger Bean penetration fields and an increase in the hysteretic magnetization. However, the effect depends on the compound, temperature, and applied magneticmore » field. In Ba(Fe{sub 0.926}Co{sub 0.074}){sub 2}As{sub 2} crystals, at 15 K and low fields, the enhancement appears to scale with the irradiation dose at a rate of about 0.27 MA {center_dot} cm{sup -2} T{sup -1}, whereas in Ba(Fe{sub 0.954}Ni{sub 0.046}){sub 2}As{sub 2} crystals, higher irradiation doses are less effective. Our results suggest that moderate irradiation with heavy ions is an effective way to homogeneously enhance the current-currying capabilities of pnictide superconductors.« less

Effects of heavy-ion irradiation on the microwave surface impedance of (Ba1-x K x )Fe2As2 single crystals

NASA Astrophysics Data System (ADS)

Ghigo, G.; Torsello, D.; Gerbaldo, R.; Gozzelino, L.; Laviano, F.; Tamegai, T.

2018-07-01

The electrodynamic response of Ba1-x K x Fe2As2 single crystals at the microwave frequencies has been investigated by means of a coplanar resonator technique, at different values of non-magnetic disorder introduced into the samples by heavy-ion irradiation. The surface impedance Z s = R s + iX s conforms to the classical skin effect above the critical temperature. Below T c, R s monotonically decreases while X s shows a peak, which evolves as a function of the irradiation fluence. The disorder-dependent Z s (T) curves are analyzed within a two-fluid model, suitably modified to account for a finite quasiparticle fraction at T = 0. The analysis gives, for the unirradiated crystal, quasiparticle relaxation times τ that are in good agreement with previous literature. Smaller τ values are deduced for the disordered crystals, both in the normal and in the superconducting states. The limits of application of the model are discussed.

Quasi ?non-destructive? laser ablation-inductively coupled plasma-mass spectrometry fingerprinting of sapphires

NASA Astrophysics Data System (ADS)

Guillong, M.; Günther, D.

2001-07-01

A homogenized 193 nm excimer laser with a flat-top beam profile was used to study the capabilities of LA-ICP-MS for 'quasi' non-destructive fingerprinting and sourcing of sapphires from different locations. Sapphires contain 97-99% of Al 2O 3 (corundum), with the remainder composed of several trace elements, which can be used to distinguish the origin of these gemstones. The ablation behavior of sapphires, as well as the minimum quantity of sample removal that is required to determine these trace elements, was investigated. The optimum ablation conditions were a fluency of 6 J cm -2, a crater diameter of 120 μm, and a laser repetition rate of 10 Hz. The optimum time for the ablation was determined to be 2 s, equivalent to 20 laser pulses. The mean sample removal was 60 nm per pulse (approx. 3 ng per pulse). This allowed satisfactory trace element determination, and was found to cause the minimum amount of damage, while allowing for the fingerprinting of sapphires. More than 40 isotopes were measured using different spatial resolutions (20-120 μm) and eight elements were reproducibly detected in 25 sapphire samples from five different locations. The reproducibility of the trace element distribution is limited by the heterogeneity of the sample. The mean of five or more replicate analyses per sample was used. Calibration was carried out using NIST 612 glass reference material as external standard. The linear dynamic range of the ICP-MS (nine orders of magnitude) allowed the use of Al, the major element in sapphire, as an internal standard. The limits of detection for most of the light elements were in the μg g -1 range and were better for heavier elements (mass >85), being in the 0.1 μg g -1 range. The accuracy of the determinations was demonstrated by comparison with XRF analyses of the same set of samples. Using the quantitative analyses obtained using LA-ICP-MS, natural sapphires from five different origins were statistically classified using ternary plots and

Irreversible metal-insulator transition in thin film VO2 induced by soft X-ray irradiation

NASA Astrophysics Data System (ADS)

Singh, V. R.; Jovic, V.; Valmianski, I.; Ramirez, J. G.; Lamoureux, B.; Schuller, Ivan K.; Smith, K. E.

2017-12-01

In this study, we show the ability of soft x-ray irradiation to induce room temperature metal-insulator transitions (MITs) in VO2 thin films grown on R-plane sapphire. The ability of soft x-rays to induce MIT in VO2 thin films is confirmed by photoemission spectroscopy and soft x-ray spectroscopy measurements. When irradiation was discontinued, the systems do not return to the insulating phase. Analysis of valence band photoemission spectra revealed that the density of states (DOSs) of the V 3d band increased with irradiation time, while the DOS of the O 2p band decreased. We use these results to propose a model in which the MIT is driven by oxygen desorption from thin films during irradiation.

Disorder in KHCO3 as studied by EPR and DTA in Cu2+ doped and gamma-irradiated single crystals

NASA Astrophysics Data System (ADS)

Koksal, F.; Karabulut, B.; Demir, D.; Icbudak, H.; Koseoglu, R.

2005-08-01

Kalicinite (KHCO3) single crystals were investigated by the electron paramagnetric resonance (EPR) technique in their Cu2+ doped and gamma- irradiated states. It is observed that the behavior of the spectrum is the same at ambient and low temperatures down to 113 K in consistence with the monoclinic symmetry of the crystal. However, when the temperature is increased to 313 K, only one site signals were observed at all orientations of the magnetic field for the Cu2+ doped samples as the site splitted signals overlap at this temperature. Furthermore, for the gamma-irradiated crystals, two sites were observed for the induced H(C)over dot O-3 and (C)over dot O-2(-) radicals at ambient temperature for an arbitrary orientation of the magnetic field. However, when the temperature is increased to 348 K, the signals due to the H(C)over dot O-3 radical overlap indicating only one site, but the signals due to (C)over dot O-2(-) the radical do not and continue to indicate the presence of the two sites. Therefore, we conclude that this one site transition at 313 K is due to the disordering of the proton vacancies, as the charge compensation of Cu2+ is fulfilled by K+ and proton holes. This indicates that the proton vacancies come to disorder at 313 K and the protons get disordered at 348 K. The differential thermal analysis results show two small endothermic peaks for the Cu2+ doped and gamma-irradiated samples at 313 and 348 K that were attributed to the disorder of the proton vacancies and protons, in consistency with the EPR results.

GaN grown on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Jing, Kong; Meixin, Feng; Jin, Cai; Hui, Wang; Huaibing, Wang; Hui, Yang

2015-04-01

High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized. Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010).

A new high pressure sapphire nuclear magnetic resonance cell

NASA Astrophysics Data System (ADS)

Bai, Shi; Taylor, Craig M.; Mayne, Charles L.; Pugmire, Ronald J.; Grant, David M.

1996-01-01

A new version of a single-crystal sapphire high pressure nuclear magnetic resonance (NMR) cell is described that is capable of controlling the sample pressure independent of the temperature. A movable piston inside the cell adjusts and controls the sample pressure from ambient conditions to 200 atm within ±0.3 atm. The linewidth at half-height for a 13C spectrum of carbon dioxide at 15 °C and 57.8 atm is found to be 0.5 Hz. The carbon dioxide gas/liquid phase transition is clearly observed by measuring 13C chemical shifts as the sample pressure approaches equilibrium. The time required for this NMR cell to reach equilibrium with its surroundings is relatively short, usually 15-30 min. The cell body has the same outer dimensions of a standard spinning turbine and fits into a standard 10 mm commercial probehead capable of controlling the sample temperature using the spectrometer's variable temperature unit. The flexibility of the device and the increased speed in making the measurement is demonstrated. Such control of important thermodynamic variables facilitates the NMR study of important biochemical and chemical reactions in gas, liquid, and supercritical fluid environments.

Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.

2016-06-06

This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotatingmore » the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.« less

Sapphire Whispering Gallery Thermometer

NASA Astrophysics Data System (ADS)

Strouse, G. F.

2007-12-01

An innovative sapphire whispering gallery thermometer (SWGT) is being explored at the National Institute of Standards and Technology (NIST) as a potential replacement for a standard platinum resistance thermometer (SPRT) for industrial applications that require measurement uncertainties of ≤ 10 mK. The NIST SWGT uses a synthetic sapphire monocrystalline disk configured as a uniaxial, dielectric resonator with whispering gallery modes between 14 GHz and 20 GHz and with Q-factors as large as 90,000. The prototype SWGT stability at the ice melting point (0°C) is ≤ 1 mK with a frequency resolution equivalent to 0.05 mK. The prototype SWGT measurement uncertainty ( k= 1) is 10 mK from 0°C to 100°C for all five resonance modes studied. These results for the SWGT approach the capabilities of industrial resistance thermometers. The SWGT promises greatly increased resistance to mechanical shock relative to SPRTs, over the range from -196°C to 500°C while retaining the low uncertainties needed by secondary calibration laboratories. The temperature sensitivity of the SWGT depends upon a well-defined property (the refractive index at microwave frequencies) and the thermal expansion of a pure material. Therefore, it is expected that SWGTs can be calibrated over a wide temperature range using a reference function, along with deviations measured at a few fixed points. This article reports the prototype SWGT stability, resolution, repeatability, and the temperature dependence of five whispering gallery resonance frequencies in the range from 0°C to 100°C.

Structure of free radicals in irradiated acetyl-L-leucine single crystals at 77 K

DOE Office of Scientific and Technical Information (OSTI.GOV)

Almanov, G.A.; Bogdanchikov, G.A.; Usov, O.M.

1988-09-01

By using the EPR method, two types of radicals are observed, which are formed in acetyl-L-leucine single crystals irradiated at 77K. These are alkyl type radicals (CH/sub 3/)/sub 2/CCH/sub 2/CH(NHCOCH/sub 3/)COOH and peptide group radicals. When the crystals are defrozen to room temperatures, the radicals of the second type disappear without formation of paramagnetic particles. Two possible structures of the peptide group radicals were studied by the INDO method. On defreezing to room temperature, the alkyl group radical is retained, while the peptide radical disappears without formation of paramagnetic particles. For the protonated form of the anion-radical, a better agreementmore » is observed between the theoretically calculated and the experimentally obtained HFI constants. The quantum chemical analysis of the possible structures of the peptide group radicals indicates that the formation of the protonated form of the anion-radical is energetically favorable.« less

Surface modifications of crystal-ion-sliced LiNbO3 thin films by low energy ion irradiations

NASA Astrophysics Data System (ADS)

Bai, Xiaoyuan; Shuai, Yao; Gong, Chaoguan; Wu, Chuangui; Luo, Wenbo; Böttger, Roman; Zhou, Shengqiang; Zhang, Wanli

2018-03-01

Single crystalline 128°Y-cut LiNbO3 thin films with a thickness of 670 nm are fabricated onto Si substrates by means of crystal ion slicing (CIS) technique, adhesive wafer bonding using BCB as the medium layer to alleviate the large thermal coefficient mismatch between LiNbO3 and Si, and the X-ray diffraction pattern indicates the exfoliated thin films have good crystalline quality. The LiNbO3 thin films are modified by low energy Ar+ irradiation, and the surface roughness of the films is decreased from 8.7 nm to 3.4 nm. The sputtering of the Ar+ irradiation is studied by scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy, and the results show that an amorphous layer exists at the surface of the exfoliated film, which can be quickly removed by Ar+ irradiation. A two-stage etching mechanism by Ar+ irradiation is demonstrated, which not only establishes a new non-contact surface polishing method for the CIS-fabricated single crystalline thin films, but also is potentially useful to remove the residue damage layer produced during the CIS process.

Radiation damage induced in Al2O3 single crystal sequentially irradiated with reactor neutrons and 90 MeV Xe ions

NASA Astrophysics Data System (ADS)

Zirour, H.; Izerrouken, M.; Sari, A.

2016-06-01

The present investigation reports the effect of 90 MeV Xe ion irradiation on neutron irradiated Al2O3 single crystals. Three irradiation experiments were performed, with neutrons only, 90 MeV Xe ions only and with neutrons followed by 90 MeV Xe ions. Neutron and 90 MeV Xe ion irradiations were performed at NUR research reactor, Algiers, Algeria and at GANIL accelerator, Caen, France respectively. After irradiation, the radiation damage was investigated by Raman spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR), optical absorption measurements, and X-ray diffraction (XRD) techniques. Raman technique revealed that the concentration of the defects formed in Al2O3 samples subsequently irradiated with neutrons and 90 MeV Xe ions is lower than that formed in Al2O3 samples which were irradiated only with neutrons. This reveals the occurrence of ionization-induced recovery of the neutron damage. Furthermore, as revealed by XRD analysis, a new peak is appeared at about 2θ = 38.03° after irradiation at high fluence (>3 × 1013 Xe/cm2). It can be assigned to the formation of new lattice plane.

Mixed garnet laser crystals for water vapour DIAL transmitter

NASA Astrophysics Data System (ADS)

Treichel, Rainer; Czeranowsky, Christoph; Ileri, Bilge; Petermann, Klaus; Huber, Günter

2017-11-01

There are more or less well established technologies such as the optical-parametric-oscillator (OPO), the Raman-laser, and the Ti-Sapphire laser, which are able to emit laser light in the region of the water vapour absorption lines. For WALES the regions of about 935 nm, 942 nm, and 944 nm have been identified as the most suitable wavelength ranges. However, each of these laser designs is highly sophisticated. Current baseline for WALES is the Ti-Sapphire laser. A fourth possibility to achieve these wavelength ranges is to shift the groundstate laser lines (938 nm and 946 nm) of the Nd:YAG laser by replacing Aluminium and Yttrium by other rare earth elements. Changes of the host lattice characteristics lead to a shift of the upper and lower laser levels. These modified crystals are summarized under the name of "Mixed Garnet" crystals. Only the Mixed Garnet lasers can be pumped directly with diode laser and use a direct approach to generate the required laser pulses without frequency conversion. Therefore no additional non-linear crystals are needed and a higher electric to optical efficiency is expected as well as single frequency operation using spectral tuning elements like etalons. Such lasers have the great potential to fulfil the requirements and to become the preferred transmitter concept for WALES as well as for follow up missions. Within a ESA study several crystal compositions have been grown, spectrally characterised and analysed. Absorbed space radiation energy in the crystal lattice causes colour centres, which can reabsorb the pump and laser wavelength and consequently reduce the laser gain considerably. Co-dopants such as Chromium and Cerium are able to suppress the colour centres and are candidates for effective radiation hardening. The results of the crystal tuning, the co-doping with different radiation hardeners and the radiation tests will be presented. There applicability for a space based water vapour DIAL transmitter will be discussed.

Fabrication of large-area nano-scale patterned sapphire substrate with laser interference lithography

NASA Astrophysics Data System (ADS)

Xuan, Ming-dong; Dai, Long-gui; Jia, Hai-qiang; Chen, Hong

2014-01-01

Periodic triangle truncated pyramid arrays are successfully fabricated on the sapphire substrate by a low-cost and high-efficiency laser interference lithography (LIL) system. Through the combination of dry etching and wet etching techniques, the nano-scale patterned sapphire substrate (NPSS) with uniform size is prepared. The period of the patterns is 460 nm as designed to match the wavelength of blue light emitting diode (LED). By improving the stability of the LIL system and optimizing the process parameters, well-defined triangle truncated pyramid arrays can be achieved on the sapphire substrate with diameter of 50.8 mm. The deviation of the bottom width of the triangle truncated pyramid arrays is 6.8%, which is close to the industrial production level of 3%.

Au-assisted fabrication of nano-holes on c-plane sapphire via thermal treatment guided by Au nanoparticles as catalysts

NASA Astrophysics Data System (ADS)

Sui, Mao; Pandey, Puran; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar; Lee, Jihoon

2017-01-01

Nanoscale patterning of sapphires is a challenging task due to the high mechanical strength, chemical stability as well as thermal durability. In this paper, we demonstrate a gold droplet assisted approach of nano-hole fabrication on c-plane sapphire via a thermal treatment. Uniformly distributed nano-holes are fabricated on the sapphire surface guided by dome shaped Au nanoparticles (NPs) as catalysts and the patterning process is discussed based on the disequilibrium of vapor, liquid, solid interface energies at the Au NP/sapphire interface induced by the Au evaporation at high temperature. Followed by the re-equilibration of interface energy, transport of alumina from the beneath of NPs to the sapphire surface can occur along the NP/sapphire interface resulting in the formation of nano-holes. The fabrication of nano-holes using Au NPs as catalysts is a flexible, economical and convenient approach and can find applications in various optoelectronics.

Laser processing of sapphire with picosecond and sub-picosecond pulses

NASA Astrophysics Data System (ADS)

Ashkenasi, D.; Rosenfeld, A.; Varel, H.; Wähmer, M.; Campbell, E. E. B.

1997-11-01

Laser processing of sapphire using a Ti:sapphire laser at 790 and 395 nm and pulse widths varying between 0.2 and 5 ps is reported. A clear improvement in quality is demonstrated for multi-shot processing with sub-ps laser pulses. For fluences between 3 and 12 J/cm 2 two ablation phases were observed, in agreement with previous work from Tam et al. using 30 ps, 266 nm laser pulses [A.C. Tam, J.L. Brand, D.C. Cheng, W. Zapka, Appl. Phys. Lett. 55 (20) (1994) 2045]. During the `gentle ablation' phase periodic wavelike structures, i.e. ripples, were observed on the Al 2O 3 surface, perpendicular to the laser polarisation and with a spacing almost equalling the laser wavelength, indicating metallic-like behaviour. The ripple modulation depth was in the order of a few tens of nm. For fluences between 1 and 2.5 J/cm 2, below the single-shot surface damage threshold and at a pulse width above 200 fs, microstructures could be produced at the rear side of a 1 mm thick sapphire substrate without affecting the front surface.

Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

NASA Astrophysics Data System (ADS)

Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

2017-09-01

Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

Optical properties of bulk gallium nitride single crystals grown by chloride-hydride vapor-phase epitaxy

NASA Astrophysics Data System (ADS)

Agyekyan, V. F.; Borisov, E. V.; Serov, A. Yu.; Filosofov, N. G.

2017-12-01

A gallium nitride crystal 5 mm in thickness was grown by chloride-hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.

Characteristics of AFB interfaces of dissimilar crystal composites as components for solid state lasers

NASA Astrophysics Data System (ADS)

Lee, H. C.; Meissner, O. R.; Meissner, H. E.

2005-06-01

Adhesive-free bonded (AFB®) composite crystals have proven to be useful components in diode-pumped solid-state lasers (DPSSL). The combination of a lasing medium of higher index of refraction with laser-inactive cladding layers of lower index results in light- or wave-guided slab architectures. The cladding layers also serve to provide mechanical support, thermal uniformity and a heat sink during laser operation. Therefore, the optical and mechanical properties of these components are of interest for the design of DPSSL, especially at high laser fluencies and output power. We report on process parameters and material attributes that result in stress-free AFB® composites that are resistant to thermally induced failure. Formation of stress-free and durable bonds between two dissimilar materials requires heat-treatment of composites to a temperature high enough to ensure durable bonds and low enough to prevent forming of permanent chemical bonds. The onset temperature for forming permanent bonds at the interface sets the upper limit for heat treatment. This limiting temperature is dependent on the chemical composition, crystallographic orientation, and surface characteristics. We have determined the upper temperature limits for forming stress-free bonds between YAG and sapphire, YAG and GGG, YAG and spinel, spinel and sapphire, spinel and GGG, and sapphire and GGG composites. We also deduce the relative magnitude of thermal expansion coefficients amongst the respective single crystals as αGGG > αsapp_c > αspinel > αYAG > αsapp_a from interferometric analysis.

Lattice distortions in GaN on sapphire using the CBED-HOLZ technique.

PubMed

Sridhara Rao, D V; McLaughlin, K; Kappers, M J; Humphreys, C J

2009-09-01

The convergent beam electron diffraction (CBED) methodology was developed to investigate the lattice distortions in wurtzite gallium nitride (GaN) from a single zone-axis pattern. The methodology enabled quantitative measurements of lattice distortions (alpha, beta, gamma and c) in transmission electron microscope (TEM) specimens of a GaN film grown on (0,0,0,1) sapphire by metal-organic vapour-phase epitaxy. The CBED patterns were obtained at different distances from the GaN/sapphire interface. The results show that GaN is triclinic above the interface with an increased lattice parameter c. At 0.85 microm from the interface, alpha=90 degrees , beta=8905 degrees and gamma=11966 degrees . The GaN lattice relaxes steadily back to hexagonal further away from the sapphire substrate. The GaN distortions are mainly confined to the initial stages of growth involving the growth and the coalescence of 3D GaN islands.

Ultrastructural properties of laser-irradiated and heat-treated dentin.

PubMed

Rohanizadeh, R; LeGeros, R Z; Fan, D; Jean, A; Daculsi, G

1999-12-01

Previous studies using scanning electron microscopy and infrared absorption spectroscopy reported that laser irradiation causes compositional changes in enamel. The purpose of this study was to evaluate the ultrastructural and compositional changes in dentin caused by irradiation with a short-pulse laser (Q-switched Nd:YAG). The irradiated and non-irradiated areas of the lased dentin samples were investigated by scanning (SEM) and transmission electron microscopy (TEM), micro-micro electron diffraction, and electron microprobe analysis of dispersive energy (EDX). Heat-treated dentin was similarly investigated. This study demonstrated that laser irradiation resulted in the recrystallization of dentin apatite and in the formation of additional calcium phosphate phases consisting of magnesium-substituted beta-tricalcium phosphate, beta-TCMP, beta-(Ca,Mg)3(PO4)2, and tetracalcium phosphate, TetCP, Ca4(PO4)O. TEM analyses of the modified and unmodified zones of the irradiated areas showed two types of crystal populations: much larger crystals from the modified zone and crystals with size and morphology similar to those of dentin apatite in the unmodified zone. The morphology of crystals in the modified zones in the irradiated dentin resembled those of dentin sintered at 800 or 950 degrees C. In the irradiated areas (modified and unmodified zones), the Ca/P ratio was lower compared with that in the non-irradiated dentin. The Mg/Ca ratio in the modified zones was higher than that in the unmodified zones and in the non-irradiated dentin. In sintered dentin, the Mg/Ca ratio increased as a function of sintering temperature. The ultrastructural and compositional changes observed in laser-irradiated dentin may be attributed to high temperature and high pressure induced by microplasma during laser irradiation. These changes may alter the solubility of the irradiated dentin, making it less susceptible to acid dissolution or to the caries process.

Zeta potential orientation dependence of sapphire substrates.

PubMed

Kershner, Ryan J; Bullard, Joseph W; Cima, Michael J

2004-05-11

The zeta potential of planar sapphire substrates for three different crystallographic orientations was measured by a streaming potential technique in the presence of KCl and (CH3)4NCl electrolytes. The streaming potential was measured for large single crystalline C-plane (0001), A-plane (1120), and R-plane (1102) wafers over a full pH range at three or more ionic strengths ranging from 1 to 100 mM. The roughness of the epi-polished wafers was verified using atomic force microscopy to be on the order of atomic scale, and X-ray photoelectron spectroscopy (XPS) was used to ensure that the samples were free of silica and other contaminants. The results reveal a shift in the isoelectric point (iep) of the three samples by as much as two pH units, with the R-plane surface exhibiting the most acidic behavior and the C-plane samples having the highest iep. The iep at all ionic strengths was tightly centered around a single pH for each wafer. These values of iep are substantially different from the range of pH 8-10 consistently reported in the literature for alpha-Al2O3 particles. Particle zeta potential measurements were performed on a model powder using phase analysis light scattering, and the iep was confirmed to occur at pH 8. Modified Auger parameters (MAP) were calculated from XPS spectra of a monolayer of iridium metal deposited on the sapphire by electron beam deposition. A shift in MAP consistent with the observed differences in iep of the surfaces confirms the effect of surface structure on the transfer of charge between the Ir and sapphire, hence accounting for the changes in acidity as a function of crystallographic orientation.

Bonding Lexan and sapphire to form high-pressure, flame-resistant window

NASA Technical Reports Server (NTRS)

Richardson, William R.; Walker, Ernie D.

1987-01-01

Flammable materials have been studied in normal gravity and microgravity for many years. Photography plays a major role in the study of the combustion process giving a permanent visual record that can be analyzed. When these studies are extended to manned spacecraft, safety becomes a primary concern. The need for a high-pressure, flame-resistant, shatter-resistant window permitting photographic recording of combustion experiments in manned spacecraft prompted the development of a method for bonding Lexan and sapphire. Materials that resist shattering (e.g., Lexan) are not compatible with combustion experiments; the material loses strength at combustion temperatures. Sapphire is compatible with combustion temperatures in oxygen-enriched atmospheres but is subject to shattering. Combining the two materials results in a shatter-resistant, flame-resistant window. Combustion in microgravity produces a low-visibility flame; however, flame propagation and flame characteristics are readily visible as long as there is no deterioration of the image. Since an air gap between the Lexan and the sapphire would reduce transmission, a method was developed for bonding these unlike materials to minimize light loss.

Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography

NASA Astrophysics Data System (ADS)

Guo, Xu; Ni, Mengyang; Zhuang, Zhe; Dai, Jiangping; Wu, Feixiang; Cui, Yushuang; Yuan, Changsheng; Ge, Haixiong; Chen, Yanfeng

2016-04-01

A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal-organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.

Influence of Cr and W alloying on the fiber-matrix interfacial shear strength in cast and directionally solidified sapphire NiAl composites

NASA Technical Reports Server (NTRS)

Asthana, R.; Tiwari, R.; Tewari, S. N.

1995-01-01

Sapphire-reinforced NiAl matrix composites with chromium or tungsten as alloying additions were synthesized using casting and zone directional solidification (DS) techniques and characterized by a fiber pushout test as well as by microhardness measurements. The sapphire-NiAl(Cr) specimens exhibited an interlayer of Cr rich eutectic at the fiber-matrix interface and a higher interfacial shear strength compared to unalloyed sapphire-NiAl specimens processed under identical conditions. In contrast, the sapphire-NiAl(W) specimens did not show interfacial excess of tungsten rich phases, although the interfacial shear strength was high and comparable to that of sapphire-NiAl(Cr). The postdebond sliding stress was higher in sapphire-NiAl(Cr) than in sapphire-NiAl(W) due to interface enrichment with chromium particles. The matrix microhardness progressively decreased with increasing distance from the interface in both DS NiAl and NiAl(Cr) specimens. The study highlights the potential of casting and DS techniques to improve the toughness and strength of NiAl by designing dual-phase microstructures in NiAl alloys reinforced with sapphire fibers.

An electrochemical cell with sapphire windows for operando synchrotron X-ray powder diffraction and spectroscopy studies of high-power and high-voltage electrodes for metal-ion batteries.

PubMed

Drozhzhin, Oleg A; Tereshchenko, Ivan V; Emerich, Hermann; Antipov, Evgeny V; Abakumov, Artem M; Chernyshov, Dmitry

2018-03-01

A new multi-purpose operando electrochemical cell was designed, constructed and tested on the Swiss-Norwegian Beamlines BM01 and BM31 at the European Synchrotron Radiation Facility. Single-crystal sapphire X-ray windows provide a good signal-to-noise ratio, excellent electrochemical contact because of the constant pressure between the electrodes, and perfect electrochemical stability at high potentials due to the inert and non-conductive nature of sapphire. Examination of the phase transformations in the Li 1-x Fe 0.5 Mn 0.5 PO 4 positive electrode (cathode) material at C/2 and 10C charge and discharge rates, and a study of the valence state of the Ni cations in the Li 1-x Ni 0.5 Mn 1.5 O 4 cathode material for Li-ion batteries, revealed the applicability of this novel cell design to diffraction and spectroscopic investigations of high-power/high-voltage electrodes for metal-ion batteries.

Thermal-Mechanical Stability of Single Crystal Oxide Refractive Concentrators for High-Temperature Solar Thermal Propulsion

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Jacobson, Nathan S.; Miller, Robert A.

1999-01-01

Single crystal oxides such as yttria-stabilized zirconia (Y2O3-ZrO2), yttrium aluminum garnet (Y3Al5O12, or YAG), magnesium oxide (MgO) and sapphire (Al2O3) are candidate refractive secondary concentrator materials for high temperature solar propulsion applications. However, thermo-mechanical reliability of these components in severe thermal environments during the space mission sun/shade transition is of great concern. Simulated mission tests are important for evaluating these candidate oxide materials under a variety of transient and steady-state heat flux conditions, and thus provide vital information for the component design. In this paper, a controlled heat flux thermal shock test approach is established for the single crystal oxide materials using a 3.0 kW continuous wave CO2 laser, with a wavelength 10.6 micron. Thermal fracture behavior and failure mechanisms of these oxide materials are investigated and critical temperature gradients are determined under various temperature and heating conditions. The test results show that single crystal sapphire is able to sustain the highest temperature gradient and heating-cooling rate, and thus exhibit the best thermal shock resistance, as compared to the yttria-stabilized zirconia, yttrium aluminum garnet and magnesium oxide.

Thermal-Mechanical Stability of Single Crystal Oxide Refractive Concentrators for High-Temperature Solar Thermal Propulsion

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Jacobson, Nathan S.; Miller, Robert A.

1999-01-01

Single crystal oxides such as yttria-stabilized zirconia (Y2O3-ZrO2), yttrium aluminum garnet (Y3Al5O12, or YAG), magnesium oxide (MgO) and sapphire (Al2O3) are candidate refractive secondary concentrator materials for high temperature solar propulsion applications. However, thermo-mechanical reliability of these components in severe thermal environments during the space mission sun/shade transition is of great concern. Simulated mission tests are important for evaluating these candidate oxide materials under a variety of transient and steady-state heat flux conditions, and thus provide vital information for the component design. In this paper, a controlled heat flux thermal shock test approach is established for the single crystal oxide materials using a 3.0 kW continuous wave CO2 laser, with a wavelength 10.6 micron. Thermal fracture behavior and failure mechanisms of these oxide materials are investigated and critical temperature gradients are determined under various temperature and heating conditions. The test results show that single crystal sapphire is able to sustain the highest temperature gradient and heating-cooling rate, and thus exhibit the best thermal shock resistance, as compared to the yttria-stabilized zirconia, yttrium aluminum garnet, and magnesium oxide.

Analysis of Shock Compression of Strong Single Crystals With Logarithmic Thermoelastic-Plastic Theory

DTIC Science & Technology

2014-05-01

Royal Society of London Series A, 465, 307–334. Clayton, J. (2010a). Modeling nonlinear electromechanical behavior of shocked silicon carbide . Journal...and fourth-order longitudinal elastic constants by shock compression techniques–application to sapphire and fused quartz. Journal of the Acoustical...Vogler, T., & Clayton, J. (2008). Heterogeneous deformation and spall of an extruded tungsten alloy: Plate impact experiments and crystal plasticity

Microdynamic Devices Fabricated on Silicon-On-Sapphire Substrates.

DTIC Science & Technology

Silicon-on-sapphire substrates are provided for the fabrication of micromechanical devices, such as micromotors . The high voltage stand-off...a consequence, the electrostatically driven devices, micromotors , can be incorporated in the integrated circuits and yet be powered at elevated voltages to increase their work potential.

Control of relative carrier-envelope phase slip in femtosecond Ti:sapphire and Cr:forsterite lasers.

PubMed

Kobayashi, Yohei; Torizuka, Kenji; Wei, Zhiyi

2003-05-01

We were able to control relative carrier-envelope phase slip among mode-locked Ti:sapphire and Cr:forsterite lasers by employing electronic feedback. The pulse timings of these lasers were passively synchronized with our crossing-beam technique. Since the optical-frequency ratio of Ti:sapphire and Cr:forsterite is approximately 3:2, we can observe the phase relation by superimposing the third harmonic of Cr:forsterite and the second harmonic of Ti:sapphire lasers in time and in space. The spectrum width of the locked beat note was less than 3 kHz, which corresponds to the controlled fluctuation of a cavity-length difference of less than 10 pm.

Femtosecond noncollinear SFG dynamics in autocorrelator setup at low level of photons

NASA Astrophysics Data System (ADS)

Tenishev, Vladimir P.; Persson, A.; Larsson, J.

2004-06-01

We report here the characteristics of noncollinear sum frequency generation in nonlinear KDP crystals by ultrashort (80 fsec) IR pulses irradiated by the intense Ti:Sapphire laser and their behavior in single shot auto-crosscorrelator (ACC) configuration. In particular we study the case where one of the beams is very weak. Our aim is to develop a procedure to provide delay time signal between light pulses for time resolved pump probe experiments based on the extraction of the phase-matched SHG spatial distribution by means of pulse shape analysis technique. We intend to apply these results to synchronize a weak short-pulse source and an intense Ti:Sapphire laser and to measure the pulse time jitter between them.

Rapid and reversible photoinduced switching of a rotaxane crystal

NASA Astrophysics Data System (ADS)

Chen, Kai-Jen; Tsai, Ya-Ching; Suzaki, Yuji; Osakada, Kohtaro; Miura, Atsushi; Horie, Masaki

2016-11-01

Crystalline phase transitions caused by external stimuli have been used to detect physical changes in the solid-state properties. This study presents the mechanical switching of crystals of ferrocene-containing rotaxane controlled by focused laser light. The expansion and contraction of the crystals can be driven by turning on and off laser light at 445 nm. The irradiation-induced expansion of the crystal involves elongation along the a, b and c axes at 30 °C, whereas heating of the crystal at 105 °C causes the shortening of c axis. The expansions reversibly occur and have the advantage of a rapid relaxation (reverse) process. Single-crystal X-ray crystallography reveals the detailed structural changes of the molecules, corresponding to a change in the size of the crystals on laser irradiation. This molecular crystal behaviour induced by laser irradiation, is demonstrated for the remote control of objects, namely, microparticle transport and microswitching in an electric circuit.

SHALLOW ELECTRON TRAPS IN SINGLE CRYSTALS OF RUTILE STUDIED BY X-RAY IRRADIATION USING LOW FREQUENCY DIELECTRIC MEASUREMENTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, K.G.

1962-04-01

Defect structure in single crystals of rutile was studied by dielectric measurements at 2 cps and above, before and after irradiation with hard x rays. The results were analyzed by a Cole-Cole plot, which is a circle with its cenier shifted away from the dielectric constant axis. X irradiation shifts the center of the Cole-Cole plot toward the dielectric constant axis, indicating a decrease in distribution of relaxation times by evacuation of electrons from their shallow traps, which after release produce interfacial polarization. An attempt was also made to calculate the a-c behavior from d-c data, but the errors atmore » frequencies of measurement were toe high, thus defying comparison with experimental data. (auth)« less

Dose dependence of nano-hardness of 6H-SiC crystal under irradiation with inert gas ions

NASA Astrophysics Data System (ADS)

Yang, Yitao; Zhang, Chonghong; Su, Changhao; Ding, Zhaonan; Song, Yin

2018-05-01

Single crystal 6H-SiC was irradiated by inert gas ions (He, Ne, Kr and Xe ions) to various damage levels at room temperature. Nano-indentation test was performed to investigate the hardness change behavior with damage. The depth profile of nano-hardness for 6H-SiC decreased with increasing depth for both the pristine and irradiated samples, which was known as indentation size effect (ISE). Nix-Gao model was proposed to determine an asymptotic value of nano-hardness by taking account of ISE for both the pristine and irradiated samples. In this study, nano-hardness of the irradiated samples showed a strong dependence on damage level and showed a weak dependence on ions species. From the dependence of hardness on damage, it was found that the change of hardness demonstrated three distinguishable stages with damage: (I) The hardness increased with damage from 0 to 0.2 dpa and achieved a maximum of hardening fraction ∼20% at 0.2 dpa. The increase of hardness in this damage range was contributed to defects produced by ion irradiation, which can be described well by Taylor relation. (II) The hardness reduced rapidly with large decrement in the damage range from 0.2 to 0.5 dpa, which was considered to be from the covalent bond breaking. (III) The hardness reduced with small decrement in the damage range from 0.5 to 2.2 dpa, which was induced by extension of the amorphous layer around damage peak.

Formation and trapping of free radicals in irradiated purines: EPR and ENDOR of hypoxanthine derivatives studied as single crystals

NASA Astrophysics Data System (ADS)

Tokdemir, Sibel

Four different derivatives of hypoxanthine (hypoxanthine-HCl·H 2O, Na+·Inosine-·2.5H 2O, sodium inosine monophosphate, and calcium inosine monophosphate) were irradiated in the form of single crystals with the objective of identifying the radical products. To do so, magnetic resonance methods (EPR, ENDOR experiments and EPR spectrum simulations) were used to study radical products in crystals following x-irradiation at ˜10 K without warming, and under conditions of controlled warming. Also, computational chemistry methods were used in combination with the experimental methods to assist in identifying the radical products. Immediately following irradiation at 10 K, at least three different radicals were observed for hypoxanthine·HCl·H2O. R5.1 was identified at the product of electron addition followed by protonation of the parent at N3. R5.2 was identified as the product of electron loss followed by deprotonation at N7, and R5.3 was tentatively identified as the product of electron gain followed by protonation at 06. On warming to room temperature, three new radicals were observed: R6.1 and R6.3 were the products of net H addition to C8 and C2 respectively, while R6.2 was the product of OH addition to C8. At least four different radical products of Na+·Inosine - were detected immediately after irradiation at 10 K. R7.1 was identified as the electron-loss product of the parent hypoxanthine base, and R7.2 was identified as the product of net H-abstraction from C5 ' of the sugar. R7.3 and R7.4 were tentatively identified as the products of net H-addition to 06 (probably via electron addition followed by protonation), and the (doubly-negative) product of electron-gain, respectively. R7.5, the C8-H addition radical, was the only product detected on warming sodium inosine crystals to room temperature. Because the ENDOR spectra from sodium IMP irradiated at 10K were complex, it was possible to identify only two radicals. R8.1 was identified as the purine base

Crystal growth and scintillation properties of Pr-doped SrI2 single crystals

NASA Astrophysics Data System (ADS)

Yokota, Yuui; Ito, Tomoki; Yoshino, Masao; Yamaji, Akihiro; Ohashi, Yuji; Kurosawa, Shunsuke; Kamada, Kei; Yoshikawa, Akira

2018-04-01

Pr-doped SrI2 (Pr:SrI2) single crystals with various Pr concentrations were grown by the halide-micro-pulling-down (H-μ-PD) method, and the scintillation properties were investigated. Pr1%:SrI2 single crystal with high transparency could be grown by the H-μ-PD method while Pr2, 3 and 5%:SrI2 single crystals included some cracks and opaque parts. In the photoluminescence spectrum of the Pr1%:SrI2 single crystal, an emission peak originated from the Pr3+ ion was observed around 435 nm while the radioluminescence spectra showed an emission peak around 535 nm for the undoped SrI2 and Pr:SrI2 single crystals. Light yields of Pr1, 2, 3 and 5%:SrI2 single crystals under γ-ray irradiation were 7700, 8700, 7200 and 6700 photons/MeV, respectively. Decay times of Pr1 and 2%:SrI2 single crystals under γ-ray irradiation were 55.9 and 35.0 ns of the fast decay component, and 435 and 408 ns of the slow decay component, respectively.

Mid-infrared ridge waveguide in MgO:LiNbO3 crystal produced by combination of swift O5+ ion irradiation and precise diamond blade dicing

NASA Astrophysics Data System (ADS)

Cheng, Yazhou; Lv, Jinman; Akhmadaliev, Shavkat; Zhou, Shengqiang; Kong, Yongfa; Chen, Feng

2015-10-01

We report on the fabrication of ridge waveguide operating at mid-infrared wavelength in MgO:LiNbO3 crystal by using O5+ ion irradiation and precise diamond blade dicing. The waveguide shows good guiding properties at the wavelength of 4 μm along the TM polarization. Thermal annealing has been implemented to improve the waveguiding performances. The propagation loss of the ridge waveguide has been reduced to be 1.0 dB/cm at 4 μm after annealing at 310 °C. The micro-Raman spectra indicate that the microstructure of the MgO:LiNbO3 crystal has no significant change along the ion track after swift O5+ ion irradiation.

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

NASA Astrophysics Data System (ADS)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

High-pressure sapphire cell for phase equilibria measurements of CO2/organic/water systems.

PubMed

Pollet, Pamela; Ethier, Amy L; Senter, James C; Eckert, Charles A; Liotta, Charles L

2014-01-24

The high pressure sapphire cell apparatus was constructed to visually determine the composition of multiphase systems without physical sampling. Specifically, the sapphire cell enables visual data collection from multiple loadings to solve a set of material balances to precisely determine phase composition. Ternary phase diagrams can then be established to determine the proportion of each component in each phase at a given condition. In principle, any ternary system can be studied although ternary systems (gas-liquid-liquid) are the specific examples discussed herein. For instance, the ternary THF-Water-CO2 system was studied at 25 and 40 °C and is described herein. Of key importance, this technique does not require sampling. Circumventing the possible disturbance of the system equilibrium upon sampling, inherent measurement errors, and technical difficulties of physically sampling under pressure is a significant benefit of this technique. Perhaps as important, the sapphire cell also enables the direct visual observation of the phase behavior. In fact, as the CO2 pressure is increased, the homogeneous THF-Water solution phase splits at about 2 MPa. With this technique, it was possible to easily and clearly observe the cloud point and determine the composition of the newly formed phases as a function of pressure. The data acquired with the sapphire cell technique can be used for many applications. In our case, we measured swelling and composition for tunable solvents, like gas-expanded liquids, gas-expanded ionic liquids and Organic Aqueous Tunable Systems (OATS)(1-4). For the latest system, OATS, the high-pressure sapphire cell enabled the study of (1) phase behavior as a function of pressure and temperature, (2) composition of each phase (gas-liquid-liquid) as a function of pressure and temperature and (3) catalyst partitioning in the two liquid phases as a function of pressure and composition. Finally, the sapphire cell is an especially effective tool to gather

High-quality AlN grown on a thermally decomposed sapphire surface

NASA Astrophysics Data System (ADS)

Hagedorn, S.; Knauer, A.; Brunner, F.; Mogilatenko, A.; Zeimer, U.; Weyers, M.

2017-12-01

In this study we show how to realize a self-assembled nano-patterned sapphire surface on 2 inch diameter epi-ready wafer and the subsequent AlN overgrowth both in the same metal-organic vapor phase epitaxial process. For this purpose in-situ annealing in H2 environment was applied prior to AlN growth to thermally decompose the c-plane oriented sapphire surface. By proper AlN overgrowth management misoriented grains that start to grow on non c-plane oriented facets of the roughened sapphire surface could be overcome. We achieved crack-free, atomically flat AlN layers of 3.5 μm thickness. The layers show excellent material quality homogeneously over the whole wafer as proved by the full width at half maximum of X-ray measured ω-rocking curves of 120 arcsec to 160 arcsec for the 002 reflection and 440 arcsec to 550 arcsec for the 302 reflection. The threading dislocation density is 2 ∗ 109 cm-2 which shows that the annealing and overgrowth process investigated in this work leads to cost-efficient AlN templates for UV LED devices.

Thermal boundary resistance between sapphire and aluminum monocrystals at low temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahling, S.; Engert, J.; Gladun, A.

1981-12-01

The thermal boundary resistance at boundaries between monocrystalline sapphire and monocrystalline aluminum and between monocrystalline sapphire and polycrystalline aluminum has been measured in the temperature range from 0.1 to 6 K with aluminum in the superconducting and normal states. The ratio of the thermal boundary resistance of the aluminum monocrystals in the superconducting state to that in the normal state increases as the temperature is lowered, reaches a maximum at about 0.13 K, and decreases at still lower temperatures. At the maximum, the thermal boundary resistance in the superconducting state is two orders of magnitude larger than the resistance inmore » the normal state.« less

Controlling material birefringence in sapphire via self-assembled, sub-wavelength defects

NASA Astrophysics Data System (ADS)

Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

2018-02-01

Birefringence is the optical property of a material having a refractive index that depends on the polarization and propagation direction of light. Generally, this is an intrinsic optical property of a material and cannot be altered. Here, we report a novel technique—direct laser writing—that enables us to control the natural, material birefringence of sapphire over a broad range of wavelengths. The broadband form birefringence originating from self-assembled, periodic array of sub-wavelength (˜ 50-200 nm) defects created by laser writing, can enhance, suppress or maintain the material birefringence of sapphire without affecting its transparency range in visible or its surface quality.

Study on accumulated crystallization characteristics of amorphous Ge2Sb2Te5 induced by multi-pulsed laser irradiations with different fluences

NASA Astrophysics Data System (ADS)

Fan, T.; Liu, F. R.; Li, W. Q.; Guo, J. C.; Wang, Y. H.; Sun, N. X.; Liu, F.

2018-07-01

Accumulated crystallization characteristics of amorphous Ge2Sb2Te5 (a-GST) films induced by multi-pulsed laser irradiations with different fluences were investigated by x-ray diffraction (XRD), Raman spectroscopy and spectrophotometer. Solid-state transformation was performed at low fluence (LF, 30.5 mJ cm‑2), whereas melting-cooling transformation dominated at medium and high fluence (MF, 45.7 and HF, 61 mJ cm‑2). Solid-state transformation induced by subsequent LF pulses promoted the growth and coalescence of grains, linearly increasing the average grain size, accordingly causing blue-shifts of the Raman spectral peaks. For MF/HF pulse irradiated films, the relatively high laser fluence increased the melting depth and reduced the volume fraction of the crystalline state induced by individual pulses, thereby increasing the threshold of laser pulse numbers for XRD detectable crystallization. However, the remelting depth induced by subsequent MF/HF laser pulse progressively decreased. The remelting-recrystallization process refined grain sizes, which improved the red-shifts of Raman spectral peaks. Moreover, optical contrast increased dramatically compared to single laser irradiation and five-level storage could be realized for a linear increase of optical contrast. The present study is fundamental for realizing the potential of multi-level devices.

High-harmonic generation by field enhanced femtosecond pulses in metal-sapphire nanostructure

PubMed Central

Han, Seunghwoi; Kim, Hyunwoong; Kim, Yong Woo; Kim, Young-Jin; Kim, Seungchul; Park, In-Yong; Kim, Seung-Woo

2016-01-01

Plasmonic high-harmonic generation (HHG) drew attention as a means of producing coherent extreme ultraviolet (EUV) radiation by taking advantage of field enhancement occurring in metallic nanostructures. Here a metal-sapphire nanostructure is devised to provide a solid tip as the HHG emitter, replacing commonly used gaseous atoms. The fabricated solid tip is made of monocrystalline sapphire surrounded by a gold thin-film layer, and intended to produce EUV harmonics by the inter- and intra-band oscillations of electrons driven by the incident laser. The metal-sapphire nanostructure enhances the incident laser field by means of surface plasmon polaritons, triggering HHG directly from moderate femtosecond pulses of ∼0.1 TW cm−2 intensities. The measured EUV spectra exhibit odd-order harmonics up to ∼60 nm wavelengths without the plasma atomic lines typically seen when using gaseous atoms as the HHG emitter. This experimental outcome confirms that the plasmonic HHG approach is a promising way to realize coherent EUV sources for nano-scale near-field applications in spectroscopy, microscopy, lithography and atto-second physics. PMID:27721374

Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.

PubMed

Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo

2016-02-10

We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.

Deformation, recrystallization, strength, and fracture of press-forged ceramic crystals.

NASA Technical Reports Server (NTRS)

Rice, R. W.

1972-01-01

Sapphire and ruby were very difficult to press-forge because they deformed without cracking only in a limited temperature range before they melted. Spinel crystals were somewhat easier and MgO, CaO, and TiC crystals much easier to forge. The degree of recrystallization that occurred during forging (which was related to the ease and type of slip intersections) varied from essentially zero in Al2O3 to complete (i.e., random polycrystalline bodies were produced) in CaO. Forging of bi- and polycrystalline bodies produced incoherent bodies as a result of grain-boundary sliding. Strengths of the forged crystals were comparable to those of dense polycrystalline bodies of similar grain size. However, forged and recrystallized CaO crystals were ductile at lower temperatures than dense hot-pressed CaO. This behavior is attributed to reduced grain-boundary impurities and porosity. Fracture origins could be located, indicating that fracture in the CaO occurs internally as a result of surface work hardening caused by machining.-

Femtosecond laser irradiation on Nd:YAG crystal: Surface ablation and high-spatial-frequency nanograting

NASA Astrophysics Data System (ADS)

Ren, Yingying; Zhang, Limu; Romero, Carolina; Vázquez de Aldana, Javier R.; Chen, Feng

2018-05-01

In this work, we systematically study the surface modifications of femtosecond (fs) laser irradiated Nd:YAG crystal in stationary focusing case (i.e., the beam focused on the target in the steady focusing geometry) or dynamic scanning case (i.e., focused fs-laser beam scanning over the target material). Micro-sized structures (e.g. micro-craters or lines) are experimentally produced in a large scale of parameters in terms of pulse energy as well as (effective) pulse number. Surface ablation of Nd:YAG surface under both processing cases are investigated, involving the morphological evolution, parameter dependence, the ablation threshold fluences and the incubation factors. Meanwhile, under specific irradiation conditions, periodic surface structures with high-spatial-frequency (<λ/2) can be generated. The obtained period is as short as 157 nm in this work. Investigations on the evolution of nanograting formation and fluence dependence of period are performed. The experimental results obtained under different cases and the comparison between them reveal that incubation effect plays an important role not only in the ablation of Nd:YAG surface but also in the processes of nanograting formation.

Irradiation effects and hydrogen behavior in H2+ and He+ implanted γ-LiAlO2 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Weilin; Zhang, Jiandong; Kovarik, Libor

2017-02-01

Gamma-phase lithium aluminate (gamma-LiAlO2) is a breeder material for tritium, a necessary substance for strategic stockpile and fusion power systems. A fundamental study of structural evolution and tritium diffusion in gamma-LiAlO2 under displacive irradiation is needed to fully assess the material performance. This study utilizes ion implantation of protium (surrogate for tritium) and helium in gamma-LiAlO2 single crystals at elevated temperatures to emulate the irradiation effects. The results show that at 573 K there are two distinct disorder saturation stages to 1 dpa without full amorphization; overlapping implantation of H2+ and He+ ions suggests possible formation of gas bubbles. Formore » irradiation to 1E21 H+/m2 (0.36 dpa at peak) at 773 K, amorphization occurs at surface with H diffusion and dramatic Li loss; the microstructure contains bubbles and cubic LiAl5O8 precipitates with sizes up to 200 nm or larger. In addition, significant H diffusion and release are observed during thermal annealing.« less

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.

PubMed

Lin, Hui-Feng; Wu, Chun-Te; Chien, Wei-Cheng; Chen, Sheng-Wen; Kao, Hui-Ling; Chyi, Jen-Inn; Chen, Jyh-Shin

2005-05-01

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Shear Strength and Interfacial Toughness Characterization of Sapphire-Epoxy Interfaces for Nacre-Inspired Composites.

PubMed

Behr, Sebastian; Jungblut, Laura; Swain, Michael V; Schneider, Gerold A

2016-10-12

The common tensile lap-shear test for adhesive joints is inappropriate for brittle substrates such as glasses or ceramics where stress intensifications due to clamping and additional bending moments invalidate results. Nevertheless, bonding of glasses and ceramics is still important in display applications for electronics, in safety glass and ballistic armor, for dental braces and restoratives, or in recently developed bioinspired composites. To mechanically characterize adhesive bondings in these fields nonetheless, a novel approach based on the so-called Schwickerath test for dental sintered joints is used. This new method not only matches data from conventional analysis but also uniquely combines the accurate determination of interfacial shear strength and toughness in one simple test. The approach is verified for sapphire-epoxy joints that are of interest for bioinspired composites. For these, the procedure not only provides quantitative interfacial properties for the first time, it also exemplarily suggests annealing of sapphire at 1000 °C for 10 h for mechanically and economically effective improvements of the interfacial bond strength and toughness. With increases of strength and toughness from approximately 8 to 29 MPa and from 2.6 to 35 J/m 2 , respectively, this thermal modification drastically enhances the properties of unmodified sapphire-epoxy interfaces. At the same time, it is much more convenient than wet-chemical approaches such as silanization. Hence, besides the introduction of a new testing procedure for adhesive joints of brittle or expensive substrates, a new and facile annealing process for improvements of the adhesive properties of sapphire is suggested and quantitative data for the mechanical properties of sapphire-epoxy interfaces that are common in synthetic nacre-inspired composites are provided for the first time.

Influence of BN fiber coatings on the interfacial structure of sapphire fiber reinforced NiAl composites

NASA Astrophysics Data System (ADS)

Reichert, K.; Wen, K.; Cremer, R.; Hu, W.; Neuschütz, D.; Gottstein, G.

2001-07-01

A new concept for a tailored fiber-matrix interface for sapphire fiber reinforced NiAl matrix composites is proposed, consisting of an initial hexagonal boron nitride (hBN) fiber coating. For this, single crystal Al 2O 3 fibers were coated with hBN by chemical vapor deposition (CVD). Following a comprehensive characterization of the CVD coating as to composition and structure by means of X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD), the fiber reinforced NiAl matrix composites were fabricated by diffusion bonding at 1400°C. The interfaces NiAl/BN and BN/Al 2O 3 were analyzed by scanning electron microscopy (SEM), analytical transmission electron microscopy (TEM), and selected area diffraction (SAD). An interfacial reaction between NiAl and hBN to form AlN was revealed using these analytical techniques.

Effect of electron irradiation on superconductivity in single crystals of Ba ( Fe 1 – x Ru x ) 2 As 2 ( x = 0.24 )

DOE PAGES

Prozorov, R.; Kończykowski, M.; Tanatar, M. A.; ...

2014-11-18

A single crystal of isovalently substituted Ba(Fe 1-xRu x) 2As 2 (x=0.24) is sequentially irradiated with 2.5 MeV electrons up to a maximum dose of 2.1×10 19 e -/cm 2. The electrical resistivity is measured in situ at T=22 K during the irradiation and ex situ as a function of temperature between subsequent irradiation runs. Upon irradiation, the superconducting transition temperature T c decreases and the residual resistivity ρ0 increases. We find that electron irradiation leads to the fastest suppression of T c compared to other types of artificially introduced disorder, probably due to the strong short-range potential of themore » pointlike irradiation defects. As a result, a more detailed analysis within a multiband scenario with variable scattering potential strength shows that the observed T c versus ρ 0 is fully compatible with s ± pairing, in contrast to earlier claims that this model leads to a too rapid suppression of T c with scattering.« less

Ti:sapphire-pumped diamond Raman laser with sub-100-fs pulse duration.

PubMed

Murtagh, Michelle; Lin, Jipeng; Mildren, Richard P; Spence, David J

2014-05-15

We report a synchronously pumped femtosecond diamond Raman laser operating at 895 nm with a 33% slope efficiency. Pumped using a mode-locked Ti:sapphire laser at 800 nm with a duration of 170 fs, the bandwidth of the Stokes output is broadened and chirped to enable subsequent pulse compression to 95 fs using a prism pair. Modeling results indicate that self-phase modulation drives the broadening of the Stokes spectrum in this highly transient laser. Our results demonstrate the potential for Raman conversion to extend the wavelength coverage and pulse shorten Ti:sapphire lasers.

JFET/SOS (Junction Field-Effect Transistor/Silicon-on-Sapphire) Devices: Gamma-Radiation-Induced Effects.

DTIC Science & Technology

1988-03-01

Results, ATR-86A(8501)-1, The Aerospace Corporation: El Segundo, Calif. (20 May 1987). 3. D. Neaman , W. Shedd, and B. Buchanan, "Permanently Ionizing...Radiation Effects in Dielectrically Bounded Field-Effect Transistors," IEEE Trans.. Nucl. Sci. NS-20 [6], 158-165 (Decembe. 1973). 4. D. Neaman , W. Shedd...1974). 5. D. Neaman , W. Shedd, and B. Buchanan, "Silicon-Sapphire Interface Charge Trapping -- Effects of Sapphire Type and Epi Growth Conditions

Carbon agent chemical vapor transport growth of Ga2O3 crystal

NASA Astrophysics Data System (ADS)

Jie, Su; Tong, Liu; Jingming, Liu; Jun, Yang; Guiying, Shen; Yongbiao, Bai; Zhiyuan, Dong; Youwen, Zhao

2016-10-01

Beta-type gallium oxide (β-Ga2O3) is a new attractive material for optoelectronic devices. Different methods had been tried to grow high quality β-Ga2O3 crystals. In this work, crystal growth of Ga2O3 has been carried out by chemical vapor transport (CVT) method in a closed quartz tube using C as transport agent and sapphire wafer as seed. The CVT mass flux has been analyzed by theoretical calculations based on equilibrium thermodynamics and 1D diffusional mass transport. The crystal growth experimental results are in agreement with the theoretical predictions. Influence factors of Ga2O3 crystal growth, such as temperature distribution, amount of C as transport agent used, have also been discussed. Structural (XRD) and optical (Raman spectroscopy, photoluminescence spectrum) properties of the CVT-Ga2O3 crystal are presented. Project supported by the National Natural Science Foundation of China (Nos. 61474104, 61504131).

Mathematical modeling of a Ti:sapphire solid-state laser

NASA Technical Reports Server (NTRS)

Swetits, John J.

1987-01-01

The project initiated a study of a mathematical model of a tunable Ti:sapphire solid-state laser. A general mathematical model was developed for the purpose of identifying design parameters which will optimize the system, and serve as a useful predictor of the system's behavior.

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D.

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface,more » high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.« less

Fabrication of sapphire-based high performance step-edge HTS Josephson junctions and SQUIDs and their application to scanning SQUID microscopy

NASA Astrophysics Data System (ADS)

Ming, Bin

Josephson junctions are at the heart of any superconductor device applications. A SQUID (Superconducting Quantum Interference Device), which consists of two Josephson junctions, is by far the most important example. Unfortunately, in the case of high-Tc superconductors (HTS), the quest for a robust, flexible, and high performance junction technology is yet far from the end. Currently, the only proven method to make HTS junctions is the SrTiO3(STO)-based bicrystal technology. In this thesis we concentrate on the fabrication of YBCO step-edge junctions and SQUIDs on sapphire. The step-edge method provides complete control of device locations and facilitates sophisticated, high-density layout. We select CeO2 as the buffer layer, as the key step to make device quality YBCO thin films on sapphire. With an "overhang" shadow mask produced by a novel photolithography technique, a steep step edge was fabricated on the CeO2 buffer layer by Ar+ ion milling with optimized parameters for minimum ion beam divergence. The step angle was determined to be in excess of 80° by atomic force microscopy (AFM). Josephson junctions patterned from those step edges exhibited resistively shunted junction (RSJ) like current-voltage characteristics. IcR n values in the 200--500 mV range were measured at 77K. Shapiro steps were observed under microwave irradiation, reflecting the true Josephson nature of those junctions. The magnetic field dependence of the junction Ic indicates a uniform current distribution. These results suggest that all fabrication processes are well controlled and the step edge is relatively straight and free of microstructural defects. The SQUIDs made from the same process exhibit large voltage modulation in a varying magnetic field. At 77K, our sapphire-based step-edge SQUID has a low white noise level at 3muphi0/ Hz , as compared to typically >10muphi0/ Hz from the best bicrystal STO SQUIDS. Our effort at device fabrication is chiefly motivated by the scanning SQUID

Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milakhina, D. S., E-mail: denironman@mail.ru; Malin, T. V.; Mansurov, V. G.

This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.

Optical waveguides in Nd:GdVO4 crystals fabricated by swift N3+ ion irradiation

NASA Astrophysics Data System (ADS)

Dong, Ningning; Yao, Yicun; Chen, Feng

2012-12-01

Optical planar waveguides have been manufactured in Nd:GdVO4 crystal by swift N3+ ions irradiation at fluence of 1.5 × 1014 ions/cm2. A typical "barrier"-style refractive index profile was formed and the light can be well confined in the waveguide region. The modal distribution of the guided modes obtained from numerical calculation has a good agreement with the experimental modal distribution. The measured photoluminescence spectra revealed that the fluorescence properties of the Nd3+ ions have been modified to some extent in the waveguide's volume. The propagation loss of the planar waveguide can decrease to lower than 1 dB/cm after adequate annealing.

Fabrication of 2-inch nano patterned sapphire substrate with high uniformity by two-beam laser interference lithography

NASA Astrophysics Data System (ADS)

Dai, LongGui; Yang, Fan; Yue, Gen; Jiang, Yang; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

2014-11-01

Generally, nano-scale patterned sapphire substrate (NPSS) has better performance than micro-scale patterned sapphire substrate (MPSS) in improving the light extraction efficiency of LEDs. Laser interference lithography (LIL) is one of the powerful fabrication methods for periodic nanostructures without photo-masks for different designs. However, Lloyd's mirror LIL system has the disadvantage that fabricated patterns are inevitably distorted, especially for large-area twodimensional (2D) periodic nanostructures. Herein, we introduce two-beam LIL system to fabricate consistent large-area NPSS. Quantitative analysis and characterization indicate that the high uniformity of the photoresist arrays is achieved. Through the combination of dry etching and wet etching techniques, the well-defined NPSS with period of 460 nm were prepared on the whole sapphire substrate. The deviation is 4.34% for the bottom width of the triangle truncated pyramid arrays on the whole 2-inch sapphire substrate, which is suitable for the application in industrial production of NPSS.

Femtosecond laser pulse distortion in Ti:sapphire multipass amplifier by atomic phase shifts

NASA Astrophysics Data System (ADS)

Hwang, Seungjin; Jeong, Jihoon; Cho, Seryeyohan; Lee, Jongmin; Yu, Tae Jun

2017-11-01

We have derived modified Frantz-Nodvik equations that simultaneously account for atomic phase shift (APS) and gain depletion as the chirped laser pulse passes through a gain medium, and have analyzed the effect of temporal pulse distortion in a Ti:sapphire multipass amplifier chain. The combination of APS and gain depletion distorted a temporal pulse and decreased the peak power. The pulse width increased from 21.3 fs to 22.8 fs and the peak power reduced to 89% for the PW class Ti:sapphire CPA laser system in the particular conditions.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

PubMed

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Atomic Resolution of Calcium and Oxygen Sublattices of Calcite in Ambient Conditions by Atomic Force Microscopy Using qPlus Sensors with Sapphire Tips.

PubMed

Wastl, Daniel S; Judmann, Michael; Weymouth, Alfred J; Giessibl, Franz J

2015-01-01

Characterization and imaging at the atomic scale with atomic force microscopy in biocompatible environments is an ongoing challenge. We demonstrate atomically resolved imaging of the calcite (101̅4) surface plane using stiff quartz cantilevers ("qPlus sensors", stiffness k = 1280 N/m) equipped with sapphire tips in ambient conditions without any surface preparation. With 10 atoms in one surface unit cell, calcite has a highly complex surface structure comprising three different chemical elements (Ca, C, and O). We obtain true atomic resolution of calcite in air at relative humidity ranging from 20% to 40%, imaging atomic steps and single atomic defects. We observe a great durability of sapphire tips with their Mohs hardness of 9, only one step below diamond. Depending on the state of the sapphire tip, we resolve either the calcium or the oxygen sublattice. We determine the tip termination by comparing the experimental images with simulations and discuss the possibility of chemical tip identification in air. The main challenges for imaging arise from the presence of water layers, which form on almost all surfaces and have the potential to dissolve the crystal surface. Frequency shift versus distance spectra show the presence of at least three ordered hydration layers. The measured height of the first hydration layer corresponds well to X-ray diffraction data and molecular dynamic simulations, namely, ∼220 pm. For the following hydration layers we measure ∼380 pm for the second and third layer, ending up in a total hydration layer thickness of at least 1 nm. Understanding the influence of water layers and their structure is important for surface segregation, surface reactions including reconstructions, healing of defects, and corrosion.

Colour centres and nanostructures on the surface of laser crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulagin, N A

2012-11-30

This paper presents a study of structural and radiationinduced colour centres in the bulk and ordered nanostructures on the surface of doped laser crystals: sapphire, yttrium aluminium garnet and strontium titanate. The influence of thermal annealing, ionising radiation and plasma exposure on the spectroscopic properties of high-purity materials and crystals containing Ti, V and Cr impurities is examined. Colour centres resulting from changes in the electronic state of impurities and plasma-induced surface modification of the crystals are studied by optical, EPR and X-ray spectroscopies, scanning electron microscopy and atomic force microscopy. X-ray line valence shift measurements are used to assessmore » changes in the electronic state of some impurity and host ions in the bulk and on the surface of oxide crystals. Conditions are examined for the formation of one- and two-level arrays of ordered crystallites 10{sup -10} to 10{sup -7} m in size on the surface of crystals doped with irongroup and lanthanoid ions. The spectroscopic properties of the crystals are analysed using ab initio self-consistent field calculations for Me{sup n+} : [O{sup 2-}]{sub k} clusters. (interaction of laser radiation with matter. laser plasma)« less

Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

NASA Technical Reports Server (NTRS)

Gassaway, J. D.

1974-01-01

The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

Sapphire implant based neuro-complex for deep-lying brain tumors phototheranostics

NASA Astrophysics Data System (ADS)

Sharova, A. S.; Maklygina, YU S.; Yusubalieva, G. M.; Shikunova, I. A.; Kurlov, V. N.; Loschenov, V. B.

2018-01-01

The neuro-complex as a combination of sapphire implant optical port and osteoplastic biomaterial "Collapan" as an Aluminum phthalocyanine nanoform photosensitizer (PS) depot was developed within the framework of this study. The main goals of such neuro-complex are to provide direct access of laser radiation to the brain tissue depth and to transfer PS directly to the pathological tissue location that will allow multiple optical phototheranostics of the deep-lying tumor region without repeated surgical intervention. The developed complex spectral-optical properties research was carried out by photodiagnostics method using the model sample: a brain tissue phantom. The optical transparency of sapphire implant allows obtaining a fluorescent signal with high accuracy, comparable to direct measurement "in contact" with the tissue.

Effect of Charging Electron Exposure on 1064nm Transmission Through Bare Sapphire Optics and SiO2 over HfO2 AR-Coated Sapphire Optics

NASA Technical Reports Server (NTRS)

Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, James; Kauder, Lonny; Cavanaugh, John

2010-01-01

Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

Effect of Charging Electron Exposure on 1064nm Transmission through Bare Sapphire Optics and SiO2 over HfO2 AR-coated Sapphire Optics

NASA Technical Reports Server (NTRS)

Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, james; Kauder, Lonny; Cavanaugh, John

2008-01-01

Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

Modification of WS2 nanosheets with controllable layers via oxygen ion irradiation

NASA Astrophysics Data System (ADS)

Song, Honglian; Yu, Xiaofei; Chen, Ming; Qiao, Mei; Wang, Tiejun; Zhang, Jing; Liu, Yong; Liu, Peng; Wang, Xuelin

2018-05-01

As one kind of two-dimensional materials, WS2 nanosheets have drawn much attention with different kinds of research methods. Yet ion irradiation method was barely used for WS2 nanosheets. In this paper, the structure, composition and optical band gap (Eg) of the multilayer WS2 films deposited by chemical vapor deposition (CVD) method on sapphire substrates before and after oxygen ion irradiation with different energy and fluences were studied. Precise tailored layer-structures and a controllable optical band gap of WS2 nanosheets were achieved after oxygen ion irradiation. The results shows higher energy oxygen irradiation changed the shape from triangular shaped grains to irregular rectangle shape but did not change 2H-WS2 phase structure. The intensity of E2g1 (Г) and A1g (Г) modes decreased and have small shifts after oxygen ion irradiation. The peak frequency difference between the E2g1 (Г) and A1g (Г) modes (Δω) decreased after oxygen ion irradiation, and this result indicates the number of layers decreased after oxygen ion irradiation. The Eg decreased with the increase of the energy and the fluence of oxygen ions. The number of layers, thickness and optical band gap changed after ion irradiation with different ion fluences and energies. The results proposed a new strategy for precise control of multilayer nanosheets and demonstrated the high applicability of ion irradiation in super-capacitors, field effect transistors and other applications.

Histological observation on dental hard tissue irradiated by ultrashort-pulsed laser

NASA Astrophysics Data System (ADS)

Uchizono, Takeyuki; Awazu, Kunio; Igarashi, Akihiro; Kato, Junji; Hirai, Yoshito

2006-04-01

In the field of dentistry, effectiveness of USPL irradiation is researched because USPL has less thermal side effect to dental hard tissue. In this paper, we observed morphological change and optical change of dental hard tissue irradiated by USPL for discussing the safety and effectiveness of USPL irradiation to dental hard tissues. Irradiated samples were crown enamel and root dentin of bovine teeth. Lasers were Ti:sapphire laser, which had pulse duration (P d)of 130 fsec and pulse repetition rate (f) of 1kHz and wavelength (l) of 800nm, free electron laser (FEL), which had P d of 15 μsec and f of 10Hz and wavelength of 9.6μm, and Er:YAG laser, which had P d of 250 μsec and f of 10Hz and wavelength of 2.94μm. After laser irradiation, the sample surfaces and cross sections were examined with SEM and EDX. The optical change of samples was observed using FTIR. In SEM, the samples irradiated by USPL had sharp and accurate ablation with no crack and no carbonization. But, in FEL and Er:YAG laser, the samples has rough ablation with crack and carbonization. It was cleared that the P/Ca ratio of samples irradiated by USPL had same value as non-irradiated samples. There was no change in the IR absorption spectrum between samples irradiated by USPL and non-irradiated sample. But, they of samples irradiated by FEL and Er:YAG laser, however, had difference value as non-irradiated samples. These results showed that USPL might be effective to ablate dental hard tissue without thermal damage.

Broad emission band of Yb3+ in the nonlinear Nb:RbTiOPO4 crystal: origin and applications.

PubMed

Carvajal, J J; Ciatto, G; Mateos, X; Schmidt, A; Griebner, U; Petrov, V; Boulon, G; Brenier, A; Peña, A; Pujol, M C; Aguiló, M; Díaz, F

2010-03-29

By means of micro-structural and optical characterization of the Yb:Nb:RbTiOPO(4) crystal, we demonstrated that the broad emission band of Yb(3+) in these crystals is due to the large splitting of the ytterbium ground state only, and not to a complex multisite occupation by the ytterbium ions in the crystals. We used this broad emission band to demonstrate wide laser tuning range and generation of femtosecond laser pulses. Passive mode-locked laser operation has been realized by using a semiconductor saturable absorber mirror, generating ultra short laser pulses of 155 fs, which were very stable in time, under Ti:sapphire laser pumping at 1053 nm.

Electron paramagnetic resonance study of radiation-induced paramagnetic centers in succinic anhydride single crystal

NASA Astrophysics Data System (ADS)

Caliskan, Betul; Caliskan, Ali Cengiz; Er, Emine

2017-09-01

Succinic anhydride single crystals were exposed to 60Co-gamma irradiation at room temperature. The irradiated single crystals were investigated at 125 K by Electron Paramagnetic Resonance (EPR) Spectroscopy. The investigation of EPR spectra of irradiated single crystals of succinic anhydride showed the presence of two succinic anhydride anion radicals. The anion radicals observed in gamma-irradiated succinic anhydride single crystal were created by the scission of the carbon-oxygen double bond. The structure of EPR spectra demonstrated that the hyperfine splittings arise from the same radical species. The reduction of succinic anhydride was identified which is formed by the addition of an electron to oxygen of the Csbnd O bond. The g values, the hyperfine structure constants and direction cosines of the radiation damage centers observed in succinic anhydride single crystal were obtained.

Development of a sapphire optical pressure sensor for high-temperature applications

NASA Astrophysics Data System (ADS)

Mills, David A.; Alexander, Dylan; Subhash, Ghatu; Sheplak, Mark

2014-06-01

This paper presents the fabrication, packaging, and characterization of a sapphire optical pressure sensor for hightemperature applications. Currently available instrumentation poses significant limitations on the ability to achieve realtime, continuous measurements in high-temperature environments such as those encountered in industrial gas turbines and high-speed aircraft. The fiber-optic lever design utilizes the deflection of a circular platinum-coated sapphire diaphragm to modulate the light reflected back to a single send/receive sapphire optical fiber. The 7 mm diameter, 50 μm thick diaphragm is attached using a novel thermocompression bonding process based on spark plasma sintering technology. Bonds using platinum as an intermediate layer are achieved at a temperature of 1200°C with a hold time of 5 min. Initial characterization of the bond interface using a simple tensile test indicates a bond strength in excess of 12 MPa. Analysis of the buckled diaphragm after bonding is also presented. The packaged sensor enables continuous operation up to 900°C. Room-temperature characterization reveals a first resonance of 18.2 kHz, a flat-band sensitivity of -130 dB re 1 V/Pa (0.32 μV/Pa) from 4-20 kHz, a minimum detectable pressure of 3.8 Pa, and a linear response up to 169 dB at 1.9 kHz.

Transmittance enhancement of sapphires with antireflective subwavelength grating patterned UV polymer surface structures by soft lithography.

PubMed

Lee, Soo Hyun; Leem, Jung Woo; Yu, Jae Su

2013-12-02

We report the total and diffuse transmission enhancement of sapphires with the ultraviolet curable SU8 polymer surface structures consisting of conical subwavelength gratings (SWGs) at one- and both-side surfaces for different periods. The SWGs patterns on the silicon templates were transferred into the SU8 polymer film surface on sapphires by a simple and cost-effective soft lithography technique. For the fabricated samples, the surface morphologies, wetting behaviors, and optical characteristics were investigated. For theoretical optical analysis, a rigorous coupled-wave analysis method was used. At a period of 350 nm, the sample with SWGs on SU8 film/sapphire exhibited a hydrophobic surface and higher total transmittance compared to the bare sapphire over a wide wavelength of 450-1000 nm. As the period of SWGs was increased, the low total transmittance region of < 85% was shifted towards the longer wavelengths and became broader while the diffuse transmittance was increased (i.e., larger haze ratio). For the samples with SWGs at both-side surfaces, the total and diffuse transmittance spectra were further enhanced compared to the samples with SWGs at one-side surface. The theoretical optical calculation results showed a similar trend to the experimentally measured data.

Widely tunable femtosecond solitonic radiation in photonic crystal fiber cladding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng Jiahui; Sokolov, Alexei V.; Benabid, F.

2010-03-15

We report on a means to generate tunable ultrashort optical pulses. We demonstrate that dispersive waves generated by solitons within the small-core features of a photonic crystal fiber cladding can be used to obtain femtosecond pulses tunable over an octave-wide spectral range. The generation process is highly efficient and occurs at the relatively low laser powers available from a simple Ti:sapphire laser oscillator. The described phenomenon is general and will play an important role in other systems where solitons are known to exist.

Optical ridge waveguides in Nd:LGS crystal produced by combination of swift C5+ ion irradiation and precise diamond blade dicing

NASA Astrophysics Data System (ADS)

Cheng, Yazhou; Lv, Jinman; Akhmadaliev, Shavkat; Zhou, Shengqiang; Chen, Feng

2016-07-01

We report on the fabrication of optical ridge waveguides in Nd:LGS crystal by using combination of swift C5+ ion irradiation and precise diamond blade dicing. The ridge structures support guidance both at 632.8 nm and 1064 nm wavelength along the TE and TM polarizations. The lowest propagation losses of the ridge waveguide for the TM mode are ~1.6 dB/cm at 632.8 nm and ~1.2 dB/cm at 1064 nm, respectively. The investigation of micro-fluorescence spectra and micro-Raman spectra indicates that the Nd3+ luminescence features have been well preserved and the microstructure of the waveguide region has no significant change after C5+ ion irradiation.

Space charge measurement in a dielectric material after irradiation with a 30 kV electron beam: Application to single-crystals oxide trapping properties

NASA Astrophysics Data System (ADS)

Vallayer, B.; Blaise, G.; Treheux, D.

1999-07-01

When an insulating material is subjected to electron irradiation, it produces a secondary emission the yield of which varies from a few percent to very high values (up to 24 per incoming electron) depending on the material and the experimental conditions. If the secondary electron emission yield is less than one, a net negative charge remains trapped in the sample. In this case, the study of the electric charges trapping properties of the material becomes possible. This article describes how it is possible to use a secondary electron microscope (SEM) as a device to perform such a study. In Sec. II, the effect of a net negative trapped charge resulting (from the injection of typically 50 pC) on the imaging process of the SEM has been described. It has been shown that when the trapped charge is high enough, it acts as a mirror reflecting the incoming electron beam which is deflected somewhere in the vacuum chamber of the microscope. A global qualitative description of the image displayed on the screen is first presented. Then electron trajectories are quantitatively studied by using the Rutherford scattering cross section in the case of a point charge. When the charge is extended, a numeric simulation has been done in order to predict the validity range of the previous model. Once the trajectories have been calculated, the connection between the remarkable elements of the image and the quantity of trapped charges has been established. Moreover, this technique allows one to study the lateral dimension of the trapped charge zone and to measure the surface potential. In Sec. III, the discussion is first focused on some precautions to be taken concerning the sample preparation before the experiment is performed. It has been shown that surface defects due either to contamination layers or machining change the trapping properties of single-crystals ceramics such as MgO and Al2O3. A cleaning procedure is proposed that consists of annealing the sample at 1500 °C for 4 h in

Light energy attenuation through orthodontic ceramic brackets at different irradiation times.

PubMed

Santini, Ario; Tiu, Szu Hui; McGuinness, Niall J P; Aldossary, Mohammed Saeed

2016-09-01

To evaluate the total light energy (TLE) transmission through three types of ceramic brackets with, bracket alone and with the addition of orthodontic adhesive, at different exposure durations, and to compare the microhardness of the cured adhesive. Three different makes of ceramic brackets, Pure Sapphire(M), Clarity™ ADVANCED(P) and Dual Ceramic(P) were used. Eighteen specimens of each make were prepared and allocated to three groups (n = 6). MARC(®)-resin calibrator was used to determine the light curing unit (LCU) tip irradiance (mW/cm(2)) and TLE (J/cm(2)) transmitted through the ceramic brackets, and through ceramic bracket plus Transbond™ XT Light Cure Adhesive, for 5, 10 and 20 s. Vickers-hardness values at the bottom of the cured adhesive were determined. Statistical analysis used one-way analysis of variance (ANOVA); P = 0.05. TLE transmission rose significantly among all samples with increasing exposure durations. TLE reaching the adhesive- enamel interface was less than 10 J/cm(2), and through monocrystalline and polycrystalline ceramic brackets was significantly different (P < 0.05). Pure Sapphire(M) showed the highest amount of TLE transmission and Vickers-hardness values for 5, 10 and 20 s. Following manufacturer's recommendations, insufficient TLE may be delivered to the adhesive: increasing the exposure durations may be required when adhesive is cured through ceramic brackets. Clinicians are advised to measure the tip irradiance of their LCUs and increase curing time beyond 5 s. Orthodontic clinicians should understand the type of light curing device and the orthodontic adhesive used in their practice.

Thermodynamic investigations on the growth of CuAlO2 delafossite crystals

NASA Astrophysics Data System (ADS)

Wolff, Nora; Klimm, Detlef; Siche, Dietmar

2018-02-01

Simultaneous differential thermal analysis (DTA) and thermogravimetric (TG) measurements with copper oxide/aluminum oxide mixtures were performed in atmospheres with varying oxygen partial pressures and with crucibles made of different materials. Only sapphire and platinum crucibles proved to be stable under conditions that are useful for the growth of CuAlO2 delafossite single crystals. Then the ternary phase diagram Al2O3-CuO-Cu and its isopleth section Cu2O-Al2O3 were redetermined. Millimeter sized crystals could be obtained from copper oxide melts with 1-2 mol% addition of aluminum oxide that are stable in platinum crucibles held in oxidizing atmosphere containing 15-21% oxygen.

Pseudorotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

DOE PAGES

Steinrück, H. -G.; Magerl, A.; Deutsch, M.; ...

2014-10-06

The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% – 3% to the sapphire’s and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in themore » crystalline coherence length of the SAM’s powderlike crystallites when rotationally aligned with the sapphire’s lattice. As a result, the increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.« less

In situ observation of defect annihilation in Kr ion-irradiated bulk Fe/amorphous-Fe 2 Zr nanocomposite alloy

DOE PAGES

Yu, K. Y.; Fan, Z.; Chen, Y.; ...

2014-08-26

Enhanced irradiation tolerance in crystalline multilayers has received significant attention lately. However, little is known on the irradiation response of crystal/amorphous nanolayers. We report on in situ Kr ion irradiation studies of a bulk Fe 96Zr 4 nanocomposite alloy. Irradiation resulted in amorphization of Fe 2Zr and formed crystal/amorphous nanolayers. α-Fe layers exhibited drastically lower defect density and size than those in large α-Fe grains. In situ video revealed that mobile dislocation loops in α-Fe layers were confined by the crystal/amorphous interfaces and kept migrating to annihilate other defects. This study provides new insights on the design of irradiation-tolerant crystal/amorphousmore » nanocomposites.« less

Spatial inhomogeneities in Al x Ga1-x N quantum wells induced by the surface morphology of AlN/sapphire templates

NASA Astrophysics Data System (ADS)

Zeimer, Ute; Jeschke, Joerg; Mogilatenko, Anna; Knauer, Arne; Kueller, Viola; Hoffmann, Veit; Kuhn, Christian; Simoneit, Tino; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Weyers, Markus

2015-11-01

The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for optical pumping were grown on planar c-plane AlN/sapphire as well as on thick epitaxially laterally overgrown (ELO) AlN layers on patterned AlN/sapphire. Two ELO AlN/sapphire templates were investigated, one with a miscut of the sapphire surface to the m-direction with an angle of 0.25°, the other with a miscut angle of 0.25° to the sapphire a-direction. The MQWs are studied by atomic force microscopy, plan-view cathodoluminescence (CL) at room temperature and 83 K as well as transmission electron microscopy using high-angle annular dark-field imaging and energy-dispersive x-ray spectroscopy. The results are compared to optical pumping measurements. It was found that the surface morphology of the templates determines the lateral wavelength distribution in the MQWs observed by spectral CL mappings. The lateral wavelength spread is largest for the laser structures grown on ELO AlN with miscut to sapphire a-direction caused by the local variation of the MQW thicknesses and the Ga incorporation at macrosteps on the ELO-AlN. A CL peak wavelength spread of up to 7 nm has been found. The MQWs grown on planar AlN/sapphire templates show a homogeneous wavelength distribution. However, due to the high threading dislocation density and the resulting strong nonradiative recombination, laser operation could not be achieved. The laser structures grown on ELO AlN/sapphire show optically pumped lasing with a record short wavelength of 237 nm.

Experimental investigation of the reaction between corundum xenocrysts and alkaline basaltic host magma: Constraints on magma residence times of basalt-hosted sapphires

NASA Astrophysics Data System (ADS)

Baldwin, L. C.; Ballhaus, C.

2018-03-01

Megacrystic sapphires (Fe-Ti-rich corundum) of up to 5 cm in size are well known from alkaline mafic rocks from intra-continental rift-related magmatic fields. There is no doubt that these sapphires represent xenocrysts that were trapped from their original lithology by ascending basaltic magmas carrying them to the Earth's surface. Most studies about basalt-hosted sapphires address the question about the origin of the sapphires, but there is hardly any information available about the time the sapphires resided inside the carrier melt. Sapphires are in reaction relationship with basalt and produce spinel coronas at the sapphire-basalt interface, spatially separating the mutually incompatible phases from one another. Assuming isothermal and isobaric conditions of spinel rim formation, the rim-thickness should be a function of the reaction time with the basaltic melt. In this paper, we report time-series experiments aimed at investigating the kinetics of spinel rim formation due to igneous corrosion of corundum. Therefore, we reacted corundum fragments with alkaline basalt powder at 1250 °C and 1GPa, using a Piston Cylinder Apparatus. The width of the spinel rim was used to estimate a residence time. Extrapolating the experimentally derived reaction rates to the thickness of natural spinel rims as described from the Siebengebirge Volcanic Field, Germany, and from Changle, China, we estimated residence times in the order of a few weeks to months.

Recovery of uranium from an irradiated solid target after removal of molybdenum-99 produced from the irradiated target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reilly, Sean Douglas; May, Iain; Copping, Roy

A process for minimizing waste and maximizing utilization of uranium involves recovering uranium from an irradiated solid target after separating the medical isotope product, molybdenum-99, produced from the irradiated target. The process includes irradiating a solid target comprising uranium to produce fission products comprising molybdenum-99, and thereafter dissolving the target and conditioning the solution to prepare an aqueous nitric acid solution containing irradiated uranium. The acidic solution is then contacted with a solid sorbent whereby molybdenum-99 remains adsorbed to the sorbent for subsequent recovery. The uranium passes through the sorbent. The concentrations of acid and uranium are then adjusted tomore » concentrations suitable for crystallization of uranyl nitrate hydrates. After inducing the crystallization, the uranyl nitrate hydrates are separated from a supernatant. The process results in the purification of uranyl nitrate hydrates from fission products and other contaminants. The uranium is therefore available for reuse, storage, or disposal.« less

High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yoshikawa, Akira; Nagatomi, Takaharu; Morishita, Tomohiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2017-10-01

We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo-convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10-12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.

Neutron-diffraction studies of the crystal structure and the color enhancement in γ-irradiated tourmaline

NASA Astrophysics Data System (ADS)

Maneewong, Apichate; Seong, Baek Seok; Shin, Eun Joo; Kim, Jeong Seog; Kajornrith, Varavuth

2016-01-01

Tourmaline gemstones have an extremely complex composition and show great variety in color. Most color centers are related to transition-metal ions. Oxidation/reduction of these ions is known to be related with the color enhancement of tourmaline caused by gamma-ray ( γ)-irradiation and/or thermal treatment. However, the current understanding of the microscopic structure of the color centers remains weak. In this work, γ-irradiation was performed on three types of tourmaline gemstones to enhance the colors of the gemstones: two pink from Afghanistan and one green from Nigeria. All three samples were irradiated at 600 and 800 kGy. Their crystal structural and chemical behaviors have been investigated by using a Rietveld refinement analysis of neutron diffraction data, Energy Dispersive X-ray Fluorescence (EDXRF), Ultraviolet-visible Spectroscopy (UV-Vis) and X-ray Photoelectron Spectroscopy (XPS), and the results were compared with data obtained for samples in the natural state. Pink tourmaline of a high number of Mn ions (T2, 0.24 wt%) showed significant improvement in the quality of the pink color (rubellite) after irradiation of 800 kGy while the pink tourmaline of low MnO content (T1, 0.08 wt%) showed color adulteration. Pink color enhancement in T2, responding to darker pink, was associated with increases in the two absorption bands, one peaking at 396 and the other at 522 nm, after irradiation. These absorption bands are ascribed to d-d transitions of divalent manganese. T1 with color enhancement due to oxidation of Mn2+ showed a slightly larger < Y- O> distance. The green tourmaline containing much higher amounts of both Mn (T3) and Fe ions, 2.59 wt% and 5.7 wt%, respectively, changed to a yellow color after irradiation at 800 kGy. The refined structural parameters of this sample revealed distortions in the Z site. The < Z- O> distance decreased from 2.033 to 2.0192 Å. In addition, the unit-cell parameter was decreased after irradiation. The color change

Injection mode-locking Ti-sapphire laser system

DOEpatents

Hovater, James Curtis; Poelker, Bernard Matthew

2002-01-01

According to the present invention there is provided an injection modelocking Ti-sapphire laser system that produces a unidirectional laser oscillation through the application of a ring cavity laser that incorporates no intracavity devices to achieve unidirectional oscillation. An argon-ion or doubled Nd:YVO.sub.4 laser preferably serves as the pump laser and a gain-switched diode laser serves as the seed laser. A method for operating such a laser system to produce a unidirectional oscillating is also described.

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voronenkov, V. V.; Virko, M. V.; Kogotkov, V. S.

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A verticalmore » Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.« less

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

NASA Astrophysics Data System (ADS)

Bryan, Isaac; Bryan, Zachary; Washiyama, Shun; Reddy, Pramod; Gaddy, Benjamin; Sarkar, Biplab; Breckenridge, M. Hayden; Guo, Qiang; Bobea, Milena; Tweedie, James; Mita, Seiji; Irving, Douglas; Collazo, Ramon; Sitar, Zlatko

2018-02-01

In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the "knee behavior" in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range.

Polymer Morphological Change Induced by Terahertz Irradiation

PubMed Central

Hoshina, Hiromichi; Suzuki, Hal; Otani, Chiko; Nagai, Masaya; Kawase, Keigo; Irizawa, Akinori; Isoyama, Goro

2016-01-01

As terahertz (THz) frequencies correspond to those of the intermolecular vibrational modes in a polymer, intense THz wave irradiation affects the macromolecular polymorph, which determines the polymer properties and functions. THz photon energy is quite low compared to the covalent bond energy; therefore, conformational changes can be induced “softly,” without damaging the chemical structures. Here, we irradiate a poly(3-hydroxybutylate) (PHB) / chloroform solution during solvent casting crystallization using a THz wave generated by a free electron laser (FEL). Morphological observation shows the formation of micrometer-sized crystals in response to the THz wave irradiation. Further, a 10−20% increase in crystallinity is observed through analysis of the infrared (IR) absorption spectra. The peak power density of the irradiating THz wave is 40 MW/cm2, which is significantly lower than the typical laser intensities used for material manipulation. We demonstrate for the first time that the THz wave effectively induces the intermolecular rearrangement of polymer macromolecules. PMID:27272984

Polymer Morphological Change Induced by Terahertz Irradiation

NASA Astrophysics Data System (ADS)

Hoshina, Hiromichi; Suzuki, Hal; Otani, Chiko; Nagai, Masaya; Kawase, Keigo; Irizawa, Akinori; Isoyama, Goro

2016-06-01

As terahertz (THz) frequencies correspond to those of the intermolecular vibrational modes in a polymer, intense THz wave irradiation affects the macromolecular polymorph, which determines the polymer properties and functions. THz photon energy is quite low compared to the covalent bond energy; therefore, conformational changes can be induced “softly,” without damaging the chemical structures. Here, we irradiate a poly(3-hydroxybutylate) (PHB) / chloroform solution during solvent casting crystallization using a THz wave generated by a free electron laser (FEL). Morphological observation shows the formation of micrometer-sized crystals in response to the THz wave irradiation. Further, a 10-20% increase in crystallinity is observed through analysis of the infrared (IR) absorption spectra. The peak power density of the irradiating THz wave is 40 MW/cm2, which is significantly lower than the typical laser intensities used for material manipulation. We demonstrate for the first time that the THz wave effectively induces the intermolecular rearrangement of polymer macromolecules.

Optical emission of directly contacted copper/sapphire interface under shock compression of megabar

NASA Astrophysics Data System (ADS)

Hao, G. Y.; Liu, F. S.; Zhang, D. Y.; Zhang, M. J.

2007-06-01

The shock-induced optical emission histories from copper/sapphire interface were measured under two different contact conditions, which simulated the typical situations of pyrometry experiments. Results showed that the "peak" feature of the radiation, previously interpreted as the appearance of so-called high-temperature layer, was nearly diminished by finely polishing and uniformly prepressing technique, and that it is possible to directly measure the equilibrium temperature of bulk metal/window interface. Study also demonstrated that the saturated value of the apparent temperature in nonideal contact situation is related to the color temperature of the shock-induced "bright spot" in sapphire window under megabar pressures.

Analytics of crystal growth in space

NASA Technical Reports Server (NTRS)

Chang, C. E.; Lefever, R. A.; Wilcox, W. R.

1975-01-01

The variation of radial impurity distribution induced by surface tension driven flow increases as the zone length decreases in silicon crystals grown by floating zone melting. In combined buoyancy driven and surface tension driven convection at the gravity of earth, the buoyancy contribution becomes relatively smaller as the zone diameter decreases and eventually convection is dominated by the surface tension driven flow (in the case of silicon, for zones of less than about 0.8 cm in diameter). Preliminary calculations for sapphire suggest the presence of an oscillatory surface tension driven convection as a result of an unstable melt surface temperature that results when the zone is heated by a radiation heater.

Ion beam radiation effects on natural halite crystals

NASA Astrophysics Data System (ADS)

Arun, T.; Ram, S. S.; Karthikeyan, B.; Ranjith, P.; Ray, D. K.; Rout, B.; Krishna, J. B. M.; Sengupta, Pranesh; Parlapalli, Venkata Satyam

2017-10-01

Halites are one of the interesting material due to its color variations. Natural halites whose color ranges from transparent to dark blue were studied by UV-VIS and Raman spectroscopy. The halite crystals were irradiated with 3 MeV proton micro-beam (∼20 μm beam width with ∼80 PA beam current) for 10 and 90 min to study the radiation damage. After 10 mins of irradiation, small spot developed on the surface of transparent halite crystal whereas after 90 mins of irradiation the spot spread inside the bulk leading to a brown coloration (20 μm initial size to ∼2.0 mm final size). The irradiated portion and the un-irradiated portion of the halites was characterized by Raman spectroscopic technique. The variation in the population density was observed from the UV-Vis spectra. The change in the Raman band intensities was observed for transparent, blue colored and proton beam irradiation halites. Such variation of spectroscopic characteristics due to proton irradiation suggests that the halite can be used for the radiation monitoring.

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors.

PubMed

Chen, Tzu Chieh; Lin, Yueh Ting; Lin, Chung Yi; Chen, W C; Chen, Meei Ru; Kao, Hui-Ling; Chyi, J I; Hsu, C H

2008-02-01

Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300 degrees C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphirebased SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.

Rapid localized crystallization of lysozyme by laser trapping.

PubMed

Yuyama, Ken-Ichi; Chang, Kai-Di; Tu, Jing-Ru; Masuhara, Hiroshi; Sugiyama, Teruki

2018-02-28

Confining protein crystallization to a millimetre size was achieved within 0.5 h after stopping 1 h intense trapping laser irradiation, which shows excellent performance in spatial and temporal controllability compared to spontaneous nucleation. A continuous-wave near-infrared laser beam is tightly focused into a glass/solution interfacial layer of a supersaturated buffer solution of hen egg-white lysozyme (HEWL). The crystallization is not observed during laser trapping, but initiated by stopping the laser irradiation. The generated crystals are localized densely in a circular area with a diameter of a few millimetres around the focal spot and show specific directions of the optical axes of the HEWL crystals. To interpret this unique crystallization, we propose a mechanism that nucleation and the subsequent growth take place in a highly concentrated domain consisting of HEWL liquid-like clusters after turning off laser trapping.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Comparing Yb-fiber and Ti:Sapphire lasers for depth resolved imaging of human skin (Conference Presentation)

NASA Astrophysics Data System (ADS)

Balu, Mihaela; Saytashev, Ilyas; Hou, Jue; Dantus, Marcos; Tromberg, Bruce J.

2016-02-01

We report on a direct comparison between Ti:Sapphire and Yb fiber lasers for depth-resolved label-free multimodal imaging of human skin. We found that the penetration depth achieved with the Yb laser was 80% greater than for the Ti:Sapphire. Third harmonic generation (THG) imaging with Yb laser excitation provides additional information about skin structure. Our results indicate the potential of fiber-based laser systems for moving into clinical use.

Crucibleless crystal growth and Radioluminescence study of calcium tungstate single crystal fiber

NASA Astrophysics Data System (ADS)

Silva, M. S.; Jesus, L. M.; Barbosa, L. B.; Ardila, D. R.; Andreeta, J. P.; Silva, R. S.

2014-11-01

In this article, single phase and high optical quality scheelite calcium tungstate single crystal fibers were grown by using the crucibleless laser heated pedestal growth technique. The as-synthesized calcium tungstate powders used for shaping seed and feed rods were investigated by X-ray diffraction technique. As-grown crystals were studied by Raman spectroscopy and Radioluminescence measurements. The results indicate that in both two cases, calcined powder and single crystal fiber, only the expected scheelite CaWO4 phase was observed. It was verified large homogeneity in the crystal composition, without the presence of secondary phases. The Radioluminescence spectra of the as-grown single crystal fibers are in agreement with that present in Literature for bulk single crystals, presented a single emission band centered at 420 nm when irradiated with β-rays.

Design and performance of an astigmatism-compensated self-mode-locked ring-cavity Ti:sapphire laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Y.; Dai, J.; Wang, Q.

1996-12-31

Based on the nonlinear ABCD matrix and the renormalized q-parameter for Gaussian-beam propagation, self-focusing in conjunction with a spatial gain profile for self-mode locking in a ring-cavity Ti:sapphire laser is analyzed. In the experiment, an astigmatism-compensated self-mode-locked ring-cavity Ti:sapphire laser is demonstrated, and self-mode-locked operation is achieved in both bidirection and unidirection with pulse durations as short as 36 fs and 32 fs, respectively. The experimental observations are in good agreement with theoretical predictions.

Microscopic origin of the optical processes in blue sapphire.

PubMed

Bristow, Jessica K; Parker, Stephen C; Catlow, C Richard A; Woodley, Scott M; Walsh, Aron

2013-06-11

Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

Crystal plasticity investigation of the microstructural factors influencing dislocation channeling in a model irradiated bcc material

DOE PAGES

Patra, Anirban; McDowell, David L.

2016-03-25

We use a continuum crystal plasticity framework to study the effect of microstructure and mesoscopic factors on dislocation channeling and flow localization in an irradiated model bcc alloy. For simulated dislocation channeling characteristics we correlate the dislocation and defect densities in the substructure, local Schmid factor, and stress triaxiality, in terms of their temporal and spatial evolution. A metric is introduced to assess the propensity for localization and is correlated to the grain-level Schmid factor. We also found that localization generally takes place in grains with a local Schmid factor in the range 0.42 or higher. Surface slip step heightsmore » are computed at free surfaces and compared to relevant experiments.« less

An ESR study of the stable radical in a γ-irradiated single crystal of 17α-dydroxy-progesterone

NASA Astrophysics Data System (ADS)

Krzyminiewski, R.; Pietrzak, J.; Konopka, R.

1990-11-01

Electron spin resonance spectroscopy was used to investigate γ-radiation damage of 17α-hydroxy-progesterone molecules in a single crystal. Two types of radicals with different rates of recombination were observed and a definite structure was assigned to the specimen by analyzing the orientational variation of the spectra. The unpaired electron of the radical is delocalized in the 2 pz orbitals of the C(6), C(4) and C(3) atoms, giving rise to a hyperfine spectrum by interaction with two equivalent α-protons in positions 4 and 6 and with two non-equivalent β-protons attached to C(7). The hyperfine coupling tensors are reported, together with the g tensor of the radical. The presence of additional intermolecular interactions caused by hydrogen bonding between O(3) and HO(17) of two molecules does not change the type of radical (which is the same as the stable radical in a γ-irradiated single crystal of progesterone) but does increase the hyperfine coupling anisotropy.

HREM study of irradiation damage in human dental enamel crystals.

PubMed

Brès, E F; Hutchison, J L; Senger, B; Voegel, J C; Frank, R M

1991-06-01

Several phenomena have been observed during the examination of human dental enamel crystals (mainly constituted by hydroxyapatite (OHAP] by high-resolution electron microscopy (HREM) at 300 and 400 keV: orientation-dependent damage in the form of mass loss from voids or uniform destruction of crystal structure, beam-induced diffusion creating outgrowths at the crystal surfaces, recrystallization of the bulk crystal and crystallization of the inorganic components of the matrix surrounding the crystals. These beam-induced crystals have the CaO structure. The phenomena observed are most likely due to various electron-crystal interaction mechanisms (ballistic knock-on damage, electronic excitations, temperature rise, etc.). In this paper, the contribution of the ballistic process to the phenomena observed is discussed. The quantitative description of the knock-on collisions rests on the McKinley-Feshbach cross-section formula. The minimum ion displacement energies which appear in this expression have been estimated on the basis of the electrostatic ion binding energies, and the covalent bond energies if required. It is shown that hydroxyl, calcium and oxygen ions can effectively be displaced by the incident 300 and 400 keV electrons. Thus, the formation of CaO crystals by the combination of calcium and oxygen ions diffusing from their initial sites inside the OHAP lattice can tentatively be explained.

Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakasu, Taizo; Sun, W.; Kobayashi, M.; Asahi, T.

2017-06-01

Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.

The effects of high-energy uranium ion irradiation on Au/n-GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Gou, J.; Zhang, C. H.; Zhang, L. Q.; Song, Y.; Wang, L. X.; Li, J. J.; Meng, Y. C.; Li, H. X.; Yang, Y. T.; Lu, Z. W.

2014-11-01

The I-V and C-V characteristics of Au/n-GaN Schottky diodes irradiated with 290-MeV 238U32+ ions are presented. The U ions can penetrate the n-type GaN epi-layer with a thickness about 3 μm grown on the c-plane of a sapphire substrate using the MOCVD technique, leaving a purely electronic energy deposition. The Au/n-GaN Schottky diodes were irradiated to successively increasing fluences from 1 × 109 to 5 × 1011 ions cm-2. The measured I-V curves show that the height of the Schottky barrier decreases after irradiation and that the Schottky barrier almost disappears when the ion fluence reaches 5 × 1010 ions cm-2. Meanwhile, the irradiation increases the series resistance. The C-V curves show that the capacitance drops sharply when the ion fluence reaches 5 × 1010 ions cm-2. The dielectric constant also decreases following the irradiation. The changes of the electrical properties are ascribed to the neutralization of the donor-like surface state and the acceptor-like surface state due to the migration of Au atoms at the interface of Au/n-GaN under energetic U ions irradiations.

Simulation and optimization of silicon-on-sapphire pressure sensor

NASA Astrophysics Data System (ADS)

Kulesh, N. A.; Kudyukov, E. V.; Balymov, K. G.; Beloyshov, A. A.

2017-09-01

In this paper, finite element analysis software COMSOL Multiphysics was used to simulate the performance of silicon-on-sapphire piezoresistive pressure sensor, aiming to elaborate a flexible model suitable for further optimization and customization of the currently produced pressure sensors. The base model was built around the cylindrical pressure cell made of titanium alloy having a circular diaphragm with monocrystalline sapphire layer attached. The monocrystalline piezoresistive elements were placed on top of the double-layer diaphragm and electrically connected to form the Wheatstone bridge. Verification of the model and parametric study included three main areas: geometrical parameters of the cell, position of the elements on the diaphragm, and operation at elevated temperature. Optimization of the cell geometry included variation of bossed titanium diaphragm parameters as well as rounding-off radiuses near the edges of the diaphragm. Influence of the temperature was considered separately for thermal expansion of the mechanical components and for the changes of electrical and piezoresistive properties of the piezoresistive elements. In conclusion, the simulation results were compared to the experimental data obtained for three different constructions of the commercial pressure sensors produced by SPA of Automatics named after Academician N.A. Semikhatov.

Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

NASA Astrophysics Data System (ADS)

Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

2017-11-01

The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors

NASA Astrophysics Data System (ADS)

Wang, Denggui; Zhang, Xingwang; Liu, Heng; Meng, Junhua; Xia, Jing; Yin, Zhigang; Wang, Ye; You, Jingbi; Meng, Xiang-Min

2017-09-01

Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, the controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for the first time we demonstrate the epitaxial growth of high-quality HfS2 with a controlled number of layers on c-plane sapphire substrates by chemical vapor deposition (CVD). The HfS2 layers exhibit an atomically sharp interface with the sapphire substrate, followed by flat, 2D layers with octahedral coordination. The epitaxial relationship between HfS2 and substrate was determined by x-ray diffraction and transmission electron microscopy measurements to be: HfS2 (0 0 0 1) [10-10]||sapphire (0 0 0 1)[1-100]. Moreover, a high-performance photodetector with a high on/off ratio of more than 103 and an ultrafast response rate of 130 µs for the rise and 155 µs for the decay times were fabricated based on the CVD-grown HfS2 layers on sapphire substrates. This simple and controllable approach opens up a new way to produce highly crystalline HfS2 atomic layers, which are promising materials for nanoelectronics.

Effect of Ti:sapphire laser on shear bond strength of orthodontic brackets to ceramic surfaces.

PubMed

Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

2015-08-01

With increasing demand for orthodontic treatments in adults, orthodontists continue to debate the optimal way to prepare ceramic surfaces for bonding. This study evaluated the effects of a Ti:sapphire laser on the shear bond strength (SBS) of orthodontic brackets bonded to two ceramic surfaces (feldspathic and IPS Empress e-Max) and the results were compared with those using two other lasers (Er:YAG and Nd:YAG) and 'conventional' techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. In total, 150 ceramic discs were prepared and divided into two groups. In each group, the following five subgroups were prepared: Ti:sapphire laser, Nd:YAG laser, Er:YAG laser, sandblasting, and HF acid. Mandibular incisor brackets were bonded using a light-cured adhesive. The samples were stored in distilled water for 24 hours at 37°C and then thermocycled. Extra samples were prepared and examined using scanning electron microscopy (SEM). SBS testing was performed and failure modes were classified. ANOVA and Tukey's HSD tests were used to compare SBS among the five subgroups (P < 0.05). Feldspathic and IPS Empress e-Max ceramics had similar SBS values. The Ti:sapphire femtosecond laser (16.76 ± 1.37 MPa) produced the highest mean bond strength, followed by sandblasting (12.79 ± 1.42 MPa) and HF acid (11.28 ± 1.26 MPa). The Er:YAG (5.43 ± 1.21 MPa) and Nd:YAG laser (5.36 ± 1.04 MPa) groups were similar and had the lowest SBS values. More homogeneous and regular surfaces were observed in the ablation pattern with the Ti:sapphire laser than with the other treatments by SEM analysis. Within the limitations of this in vitro study, Ti:sapphire laser- treated surfaces had the highest SBS values. Therefore, this technique may be useful for the pretreatment of ceramic surfaces as an alternative to 'conventional' techniques. © 2015 Wiley Periodicals, Inc.

Epitaxial growth and characterization of approximately 300-nm-thick AlInN films nearly lattice-matched to c-plane GaN grown on sapphire

NASA Astrophysics Data System (ADS)

Miyoshi, Makoto; Yamanaka, Mizuki; Egawa, Takashi; Takeuchi, Tetsuya

2018-05-01

AlInN epitaxial films with film thicknesses up to approximately 300 nm were grown nearly lattice-matched to a c-plane GaN-on-sapphire template by metalorganic chemical vapor deposition. The AlInN films showed relative good crystal qualities and flat surfaces, despite the existence of surface pits connected to dislocations in the underlying GaN film. The refractive index derived in this study agreed well with a previously reported result obtained over the whole visible wavelength region. The extinction coefficient spectrum exhibited a clear absorption edge, and the bandgap energy for AlInN nearly lattice-matched to GaN was determined to be approximately 4.0 eV.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, T. T., E-mail: li48@llnl.gov; Bayu Aji, L. B.; Heo, T. W.

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar{sup +} ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, T. T.; Bayu Aji, L. B.; Heo, T. W.

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar + ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

DOE PAGES

Li, T. T.; Bayu Aji, L. B.; Heo, T. W.; ...

2016-06-03

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar + ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. In conclusion, the propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Thermal, spectroscopic properties and laser performance at 1.06 and 1.33 μm of Nd : Ca 4YO(BO 3) 3 and Nd : Ca 4GdO(BO 3) 3 crystals

NASA Astrophysics Data System (ADS)

Wang, Changqing; Zhang, Huaijin; Meng, Xianlin; Zhu, Li; Chow, Y. T.; Liu, Xuesong; Cheng, Ruiping; Yang, Zhaohe; Zhang, Shaojun; Sun, Lianke

2000-11-01

Nd : Ca 4YO(BO 3) 3 (Nd : YCOB) and Nd : Ca 4GdO(BO 3) 3 (Nd : GdCOB) crystals were grown by Czochralski method. Thermal expansion and specific heat of these two crystals were experimentally determined. Their fluorescence spectra were measured within the range from 1000 to 1500 nm. Laser output experiments at 1.06 and 1.33 μm of Nd : YCOB and Nd : GdCOB crystals were performed with a cw Ti : sapphire laser as the pump source.

Modelling of heating and photoexcitation of single-crystal silicon under multipulse irradiation by a nanosecond laser at 1.06 μm

NASA Astrophysics Data System (ADS)

Polyakov, D. S.; Yakovlev, E. B.

2018-03-01

We report a theoretical study of heating and photoexcitation of single-crystal silicon by nanosecond laser radiation at a wavelength of 1.06 μm. The proposed physicomathematical model of heating takes into account the complex nonlinear dynamics of the interband absorption coefficient of silicon and the contribution of the radial heat removal to the cooling of silicon between pulses under multipulse irradiation, which allows one to obtain a satisfactory agreement between theoretical predictions of silicon melting thresholds at different nanosecond pulse durations and experimental data (both under single-pulse and multipulse irradiation). It is found that under irradiation by nanosecond pulses at a wavelength of 1.06 μm, the dynamic Burshtein–Moss effect can play an important role in processes of photoexcitation and heating. It is shown that with the regimes typical for laser multipulse microprocessing of silicon (the laser spot diameter is less than 100 μm, and the repetition rate of pulses is about 100 kHz), the radial heat removal cannot be neglected in the analysis of heat accumulation processes.

Morphological and chemical evolution on InP(1 0 0) surface irradiated with femtosecond laser

NASA Astrophysics Data System (ADS)

Qian, H. X.; Zhou, W.; Zheng, H. Y.; Lim, G. C.

2005-12-01

Single crystalline InP was ablated in air with p-polarized Ti:sapphire femtosecond laser at a fixed laser fluence of 82 mJ/cm 2. Ripples parallel to the laser polarization direction were found by scanning electron microscopy and atomic force microscopy to form for laser pulses ranging from 50 to 1000, whereas flower-like structures appeared for laser pulses of 10 4 and above. Analysis by X-ray photoelectron spectroscopy showed formation of indium and phosphorus oxides on the irradiated surface and the amounts of oxides increased with increasing number of laser pulses. The oxide formation is attributed to chemical reaction between the ultrafast laser ablation plume and oxygen in air, and formation of the flower-like structures is shown to be related to deposition of the oxides on the irradiated surface.

Sapphire reinforced alumina matrix composites

NASA Technical Reports Server (NTRS)

Jaskowiak, Martha H.; Setlock, John A.

1994-01-01

Unidirectionally reinforced A1203 matrix composites have been fabricated by hot pressing. Approximately 30 volume % of either coated or uncoated sapphire fiber was used as reinforcement. Unstabilized ZrO2 was applied as the fiber coating. Composite mechanical behavior was analyzed both after fabrication and after additional heat treatment. The results of composite tensile tests were correlated with fiber-matrix interfacial shear strengths determined from fiber push-out tests. Substantially higher strength and greater fiber pull-out were observed for the coated fiber composites for all processing conditions studied. The coated fiber composites retained up to 95% and 87% of their as-fabricated strength when heat treated at 14000C for 8 or 24 hours, respectively. Electron microscopy analysis of the fracture surfaces revealed extensive fiber pull-out both before and after heat treatment.

Characterization of sapphire: For its material properties at high temperatures

NASA Astrophysics Data System (ADS)

Bal, Harman Singh

There are numerous needs for sensing, one of which is in pressure sensing for high temperature application such as combustion related process and embedded in aircraft wings for reusable space vehicles. Currently, silicon based MEMS technology is used for pressure sensing. However, due to material properties the sensors have a limited range of approximately 600 °C which is capable of being pushed towards 1000 °C with active cooling. This can introduce reliability issues when you add more parts and high flow rates to remove large amounts of heat. To overcome this challenge, sapphire is investigated for optical based pressure transducers at temperatures approaching 1400 °C. Due to its hardness and chemical inertness, traditional cutting and etching methods used in MEMS technology are not applicable. A method that is being investigated as a possible alternative is laser machining using a picosecond laser. In this research, we study the material property changes that occur from laser machining and quantify the changes with the experimental results obtained by testing sapphire at high-temperature with a standard 4-point bending set-up.

Irradiation Creep in Graphite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ubic, Rick; Butt, Darryl; Windes, William

2014-03-13

An understanding of the underlying mechanisms of irradiation creep in graphite material is required to correctly interpret experimental data, explain micromechanical modeling results, and predict whole-core behavior. This project will focus on experimental microscopic data to demonstrate the mechanism of irradiation creep. High-resolution transmission electron microscopy should be able to image both the dislocations in graphite and the irradiation-induced interstitial clusters that pin those dislocations. The team will first prepare and characterize nanoscale samples of virgin nuclear graphite in a transmission electron microscope. Additional samples will be irradiated to varying degrees at the Advanced Test Reactor (ATR) facility and similarlymore » characterized. Researchers will record microstructures and crystal defects and suggest a mechanism for irradiation creep based on the results. In addition, the purchase of a tensile holder for a transmission electron microscope will allow, for the first time, in situ observation of creep behavior on the microstructure and crystallographic defects.« less

Effect of Co-60 gamma radiation on optical, dielectric and mechanical properties of strontium L-ascorbate hexahydrate NLO crystal

NASA Astrophysics Data System (ADS)

Dileep, M. S.; Suresh Kumar, H. M.

2018-04-01

A potentially useful nonlinear optical semi-organic single crystal of strontium L-ascorbate hexahydrate (SLAH) was grown by solution growth slow evaporation technique at room temperature. The grown crystal is semi transparent, yellowish in color with monoclinic crystal system having space group P21 and is stable up to 198 °C. Further, SLAH crystals were irradiated with gamma rays produced by 60Co with different doses of 10 KGy, 30 KGy and 50 KGy at room temperature and then studied the effect of gamma-rays on dielectric properties, optical absorption, microhardness and SHG efficiency. The absorption study reveals that the absorbance of the grown crystal is appeared to be low throughout the visible region with a lower cutoff wavelength of 277 nm and these parameters are not affected upon gamma irradiation. The luminescence intensity of the crystal is also not affected by the irradiation. There is noticeable changes were observed in dielectric properties and hardness of the materials for different doses of gamma irradiation. The second harmonic generation (SHG) efficiency of the grown crystal is 0.54 times that of the KDP crystal and is decreased moderately by increasing the dosage of gamma irradiation.

Stress engineering of high-quality single crystal diamond by heteroepitaxial lateral overgrowth

DOE PAGES

Tang, Y. -H.; Golding, B.

2016-02-02

Here, we describe a method for lateral overgrowth of low-stress single crystal diamond by chemical vapor deposition (CVD). The process is initiated by deposition of a thin (550 nm) (001) diamond layer on Ir-buffered a-plane sapphire. The diamond is partially masked by periodic thermally evaporated Au stripes using photolithography. Lateral overgrowth of the Au occurs with extremely effective filtering of threading dislocations. Thermal stress resulting from mismatch of the low thermal expansion diamond and the sapphire substrate is largely accommodated by the ductile Au layer. The stress state of the diamond is investigated by Raman spectroscopy for two thicknesses: atmore » 10 μm where the film has just overgrown the Au mask and at 180 μm where the film thickness greatly exceeds the scale of the masking. For the 10-μm film, the Raman linewidth shows spatial oscillations with the period of the Au stripes with a factor of 2 to 3 reduction relative to the unmasked region. In a 180-μm thick diamond film, the overall surface stress was extremely low, 0.00 ± 0.16 GPa, obtained from the Raman shift averaged over the 7.5mm diameter of the crystal at its surface. We conclude that the metal mask protects the overgrown diamond layer from substrate-induced thermal stress and cracking. Lastly, it is also responsible for low internal stress by reducing dislocation density by several orders of magnitude.« less

Ion irradiation damage in ilmenite at 100 K

USGS Publications Warehouse

Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.; Nord, G.L.

1997-01-01

A natural single crystal of ilmenite (FeTiO3) was irradiated at 100 K with 200 keV Ar2+. Rutherford backscattering spectroscopy and ion channeling with 2 MeV He+ ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 ?? 1015 Ar2+/cm2, considerable near-surface He+ ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO3) and spinel (MgAl2O4) to explore factors that may influence radiation damage response in oxides.

Electroform replication of smooth mirrors from sapphire masters

NASA Technical Reports Server (NTRS)

Altkorn, R.; Chang, J.; Haidle, R.; Takacs, P. Z.; Ulmer, M. P.

1992-01-01

A sapphire master was used to produce mirrors that exhibit mid-to-high-frequency roughness as low as 3 A. The fabrication procedure and potential applications in X-ray astronomy are discussed. It is shown that foils replicated from flat smooth mandrels should offer at least equivalent HF roughness and significantly lower mid-frequency ripple than those coated with lacquer. A ceramic-surface mandrel could also be expected to last far longer without the need for repolishing than electroless nickel-coated mandrels.

Mechanism of light-induced domain nucleation in LiNbO 3 crystals

NASA Astrophysics Data System (ADS)

Liu, De'an; Zhi, Ya'nan; Luan, Zhu; Yan, Aimin; Liu, Liren

2007-09-01

In this paper, within the spectrum range from 351 nm to 799 nm, the different reductions of nucleation field induced by the focused continuous irradiation with different light intensity are achieved in congruent LiNbO 3 crystals. The reduction proportion increases exponentially with decreasing the irradiation wavelength, and decreases exponentially with increasing the irradiation wavelength. Basing on photo-excited effect, we propose a proper model to explain the mechanism of light-induced domain nucleation in congruent LiNbO 3 crystals.

Time dependent temperature distribution in pulsed Ti:sapphire lasers

NASA Technical Reports Server (NTRS)

Buoncristiani, A. Martin; Byvik, Charles E.; Farrukh, Usamah O.

1988-01-01

An expression is derived for the time dependent temperature distribution in a finite solid state laser rod for an end-pumped beam of arbitrary shape. The specific case of end pumping by circular (constant) or Gaussian beam is described. The temperature profile for a single pump pulse and for repetitive pulse operation is discussed. The particular case of the temperature distribution in a pulsed titanium:sapphire rod is considered.

Texture evolution and mechanical behaviour of irradiated face-centred cubic metals

NASA Astrophysics Data System (ADS)

Chen, L. R.; Xiao, X. Z.; Yu, L.; Chu, H. J.; Duan, H. L.

2018-02-01

A physically based theoretical model is proposed to investigate the mechanical behaviour and crystallographic texture evolution of irradiated face-centred cubic metals. This model is capable of capturing the main features of irradiated polycrystalline materials including irradiation hardening, post-yield softening and plasticity localization. Numerical results show a good agreement with experimental data for both unirradiated and irradiated stress-strain relationships. The study of crystallographic texture reveals that the initial randomly distributed texture of unirradiated metals under tensile loading can evolve into a mixture of [111] and [100] textures. Regarding the irradiated case, crystallographic texture develops in a different way, and an extra part of [110] texture evolves into [100] and [111] textures. Thus, [100] and [111] textures become dominant more quickly compared with those of the unirradiated case for the reason that [100] and [111]-oriented crystals have higher strength, and their plastic deformation behaviours are more active than other oriented crystals. It can be concluded that irradiation-induced defects can affect both the mechanical behaviour and texture evolution of metals, both of which are closely related to irradiation hardening.

Ultrasound assisted crystallization of mefenamic acid: Effect of operating parameters and comparison with conventional approach.

PubMed

Iyer, Sneha R; Gogate, Parag R

2017-01-01

The current work investigates the application of low intensity ultrasonic irradiation for improving the cooling crystallization of Mefenamic Acid for the first time. The crystal shape and size has been analyzed with the help of optical microscope and image analysis software respectively. The effect of ultrasonic irradiation on crystal size, particle size distribution (PSD) and yield has been investigated, also establishing the comparison with conventional approach. It has been observed that application of ultrasound not only enhances the yield but also reduces the induction time for crystallization as compared to conventional cooling crystallization technique. In the presence of ultrasound, the maximum yield was obtained at optimum conditions of power dissipation of 30W and ultrasonic irradiation time of 10min. The yield was further improved by application of ultrasound in cycles where the formed crystals are allowed to grow in the absence of ultrasonic irradiation. It was also observed that the desired crystal morphology was obtained for the ultrasound assisted crystallization. The conventionally obtained needle shaped crystals transformed into plate shaped crystals for the ultrasound assisted crystallization. The particle size distribution was analyzed using statistical means on the basis of skewness and kurtosis values. It was observed that the skewness and excess kurtosis value for ultrasound assisted crystallization was significantly lower as compared to the conventional approach. XRD analysis also revealed better crystal properties for the processed mefenamic acid using ultrasound assisted approach. The overall process intensification benefits of mefenamic acid crystallization using the ultrasound assisted approach were reduced particle size, increase in the yield and uniform PSD coupled with desired morphology. Copyright © 2016 Elsevier B.V. All rights reserved.

Investigation of Oxygen Diffusion in Irradiated UO2 with MD Simulation

NASA Astrophysics Data System (ADS)

Günay, Seçkin D.

2016-11-01

In this study, irradiated UO2 is analyzed by atomistic simulation method to obtain diffusion coefficient of oxygen ions. For this purpose, a couple of molecular dynamics (MD) supercells containing Frenkel, Schottky, vacancy and interstitial types for both anion and cation defects is constructed individually. Each of their contribution is used to calculate the total oxygen diffusion for both intrinsic and extrinsic ranges. The results display that irradiation-induced defects contribute the most to the overall oxygen diffusion at temperatures below 800-1,200 K. This result is quite sensible because experimental data shows that, from room temperature to about 1,500 K, irradiation-induced swelling decreases and irradiated UO2 lattice parameter is gradually recovered because defects annihilate each other. Another point is that, concentration of defects enhances the irradiation-induced oxygen diffusion. Irradiation type also has the similar effect, namely oxygen diffusion in crystals irradiated with α-particles is more than the crystals irradiated with neutrons. Dynamic Frenkel defects dominate the oxygen diffusion data above 1,500—1,800 K. In all these temperature ranges, thermally induced Frenkel defects make no significant contribution to overall oxygen diffusion.

UV response on dielectric properties of nano nematic liquid crystal

NASA Astrophysics Data System (ADS)

Pandey, Kamal Kumar; Tripathi, Pankaj Kumar; Misra, Abhishek Kumar; Manohar, Rajiv

2018-03-01

In this work, we investigate the effect of UV light irradiation on the dielectric parameters of nematic liquid crystal (5CB) and ZnO nanoparticles dispersed liquid crystal. With addition of nanoparticles in nematic LC are promising new materials for a variety of application in energy harvesting, displays and photonics including the liquid crystal laser. To realize many applications, however we optimize the properties of liquid crystal and understand how the UV light irradiation interact the nanoparticles and LC molecules in dispersed/doped LC. The dielectric permittivity and loss factor have discussed the pure nematic LC and dispersed/doped system after, during and before UV light exposure. The dielectric relaxation spectroscopy was carried out in the frequency range 100 Hz-10 MHz in the nematic mesophase range.

Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

NASA Astrophysics Data System (ADS)

Zhu, Nai-Wei; Hu, Ming; Xia, Xiao-Xu; Wei, Xiao-Ying; Liang, Ji-Ran

2014-04-01

The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source

NASA Astrophysics Data System (ADS)

Maruyama, Takahiro; Yamashita, Yutaka; Saida, Takahiro; Tanaka, Shin-ichiro; Naritsuka, Shigeya

2017-06-01

We demonstrated direct synthesis of graphene films consisting of a few layers (few-layered graphene) on sapphire substrates by liquid-phase growth (LPG), using liquid Ga as the melt and SiC micropowder as the source material. When the dissolution temperature was above 700 °C, almost all Si atoms of SiC diffused into the Ga melt and only carbon atoms remained at the interface beneath the liquid Ga. Above 800 °C, X-ray photoelectron spectra showed that most of the remaining carbon was graphitized. When the dissolution temperature was 1000 °C, Raman spectra showed that few-layered graphene films grew on the sapphire substrates.

Beam tests of proton-irradiated PbWO4 crystals and evaluation of double-ended read-out technique for mitigation of radiation damage effects

NASA Astrophysics Data System (ADS)

Lucchini, Marco; CMS Collaboration

2017-11-01

The harsh radiation environment in which detectors will have to operate during the High Luminosity phase of LHC (HL-LHC) represents a crucial challenge for many calorimeter technologies. In the CMS forward calorimeters, ionizing doses and hadron fluences will reach up to 300 kGy (at a dose rate of 30 Gy/h) and 2 × 1014 cm-2, respectively, at the pseudo-rapidity region of |η| = 2.6. To evaluate the evolution of the CMS ECAL performance in such conditions, a set of PbWO4 crystals, exposed to 24 GeV protons up to integrated fluences between 2.1 × 1013 cm-2 and 1:3 × 1014 cm2, has been studied in beam tests. A degradation of the energy resolution and a non-linear response to electron showers are observed in damaged crystals. Direct measurements of the light output from the crystals show the amplitude decreasing and pulse becoming faster as the fluence increases. The evolution of the PbWO4 crystals calorimetric performance has been well understood and parameterized in terms of increasing light absorption inside the crystal volume. A double-ended read-out configuration, in which two identical photodetectors are coupled to the opposite ends of each crystal, has also been tested. The separate and simultaneous read out of the light from the two ends of the crystal allows to correct for longitudinal shower fluctuations and to mitigate the degradation of energy resolution in highly damaged crystals. The non-linear response to electromagnetic showers, arising from high non-uniformity of light collection efficiency along the longitudinal axis of irradiated crystals, can also be corrected by means of the double-ended read-out technique.

Ruby and sapphire from Jegdalek, Afghanistan

USGS Publications Warehouse

Bowersox, G.W.; Foord, E.E.; Laurs, B.M.; Shigley, J.E.; Smith, C.P.

2000-01-01

This study provides detailed mining and gemological information on the Jegdalek deposit, in east-central Afghanistan, which is hosted by elongate beds of corundum-bearing marble. Some facet-grade ruby has been recovered, but most of the material consists of semitransparent pink sapphire of cabochon or carving quality. The most common internal features are dense concentrations of healed and nonhealed fracture planes and lamellar twin planes. Color zoning is common, and calcite, apatite, zircon, mica, iron sulfide minerals, graphite, rutile, aluminum hydroxide, and other minerals are also present in some samples. Although the reserves appear to be large, future potential will depend on the establishment of a stable government and the introduction of modern mining and exploration techniques. ?? 2000 Gemological Institute of America.

Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study

PubMed Central

Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

2016-01-01

Introduction Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. Aim The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Materials and Methods Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. Results The light absorption values obtained from spectrofluorometeric study were 3300000–3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000–6500000 cps for Group 2

Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

PubMed

Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

2016-08-01

Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. The light absorption values obtained from spectrofluorometeric study were 3300000-3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000-6500000 cps for Group 2 (polycrystalline ceramic brackets) and 2700000 -3000000 cps for

Raman study of apatite amorphised with swift heavy ions under various irradiation conditions

NASA Astrophysics Data System (ADS)

Weikusat, Christian; Glasmacher, Ulrich A.; Schuster, Beatrice; Trautmann, Christina; Miletich, Ronald; Neumann, Reinhard

2011-04-01

Crystallographically oriented Durango fluorapatites were exposed to swift heavy ions (Xe, Ta, Au, U) at different irradiation conditions. Beam-induced sample modifications were investigated with respect to the effect of fluence (109-1013 ions/cm2), electronic energy loss (18-27 keV/nm), and pressure (3.6-11.5 GPa) applied during irradiation. In situ high-pressure irradiation was performed in diamond anvil cells. Confocal Raman spectroscopy was used to trace the occurring changes in the crystal lattice. Fragmentation of the crystal specimen depends on the orientation and sample thickness and was found to scale with energy loss and fluence. The radiation damage for irradiation along the c-axis was found to be larger than for the < hk0> direction, independent of the confining pressure. Observations on samples irradiated at high pressures indicate a stabilising effect, leading to reduced amorphisation in comparison to the samples irradiated without pressure.

Low propagation loss silicon-on-sapphire waveguides for the mid-infrared.

PubMed

Li, Fangxin; Jackson, Stuart D; Grillet, Christian; Magi, Eric; Hudson, Darren; Madden, Steven J; Moghe, Yashodhan; O'Brien, Christopher; Read, Andrew; Duvall, Steven G; Atanackovic, Peter; Eggleton, Benjamin J; Moss, David J

2011-08-01

We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8 dB/cm at λ = 1550 nm, ~1.1 to 1.4 dB/cm at λ = 2080 nm and < 2dB/cm at λ = 5.18 μm.

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang, Guohong

2008-01-01

Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS.

MPS Li-Ion Batteries Qualified to Fly on Canadian Sapphire Spacecraft

NASA Astrophysics Data System (ADS)

Remy, S.; Carre, A.; Kimber, R.; Alcindor, P.; Krabel, E.

2014-08-01

Saft Li-ion 8S3P MPS (Medium Prismatic cell for Space Battery) autonomous battery has been designed and qualified primarily to meet LEO power requirements. It has been available for more than 8 years, the original battery concept qualification program being successfully carried-out with CNES support in year 2005. This module has been selected for the first time by the UK satellite manufacturer SSTL for the Sapphire spacecraft platform, on behalf of the spacecraft prime MDA Systems Ltd (MDA) and customer the Canadian DND. Due to the high mechanical load demand in the specifications, a delta qualification campaign was launched to make sure that the MPS battery was able to cope with this requirement. A partner approach between Saft and SSTL led Saft to build some dedicated representative 5S packs, which have been step by step tested by SSTL shaker. Based on the results, the battery was made and finally installed inside the Sapphire spacecraft which was successfully launched on February 25th 2013 after battery storage of about 3.5 years.

Photonics of 2D gold nanolayers on sapphire surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Nabatov, B. V.

Gold layers with thicknesses of up to several nanometers, including ordered and disordered 2D nanostructures of gold particles, have been formed on sapphire substrates; their morphology is described; and optical investigations are carried out. The possibility of increasing the accuracy of predicting the optical properties of gold layers and 2D nanostructures using quantum-mechanical models based on functional density theory calculation techniques is considered. The application potential of the obtained materials in photonics is estimated.

A Completely Solid-State Tunable Ti:Sapphire Laser System

NASA Technical Reports Server (NTRS)

Guerra, David V.; Coyle, D. Barry; Krebs, Danny J.

1994-01-01

Compact, completely solid-state tunable pulsed laser system passively cooled developed for potential employment in aircraft and sounding-rocket lidar experiments. Ti:sapphire based laser system pumped with frequency-doubled diode-pumped Nd:YAG. Rugged, self-contained system extremely flexible and provides pulsed output at specific frequencies with low input-power requirements. In-situ measurements enables scientists to study upper-atmosphere dynamics. Tuning range easily extended to bands between 650-950 nm in order to study other atmospheric constituents.

Stress generated modifications of epitaxial ferroelectric SrTiO3 films on sapphire

NASA Astrophysics Data System (ADS)

Hollmann, E.; Schubert, J.; Kutzner, R.; Wördenweber, R.

2009-06-01

The effect of lattice-mismatch induced stress upon the crystallographic structure, strain, strain relaxation, and the generation of different types of defects in heteroepitaxially grown SrTiO3 films on CeO2 buffered sapphire is examined. Depending on the thickness of the SrTiO3 layer, characteristic changes in the structural perfection of the layers, their crystallographic orientation with respect to the substrate system, and their strain is observed. For thin films misfit dislocations partially compensate the stress in the SrTiO3 layer, whereas cracks develop in thicker SrTiO3 films. The cracks are orientated along two predominant crystallographic orientations of the sapphire. The structural modifications and the formation of misfit defects and cracks are explained in a model based on lattice misfit induced stress, on the one hand, and energy considerations taking into account the stress release due to crack formation and the energy necessary for the formation of new surfaces at the crack, on the other hand. The impact of lattice misfit is discussed in two steps, i.e., intrinsic and thermal induced misfits during heteroepitaxial film growth at a given temperature and the subsequent cooling of the sample, respectively. The comparison of the theoretical predictions and the experimental observations demonstrate that intrinsic mismatch and thermal mismatch have to be considered in order to explain strain dependent effects in complex heteroepitaxial layer systems such as induced ferroelectricity of SrTiO3 on sapphire.

Modification of the electrical, optical and thermal properties of L-Arginine Perchlorate single crystals by 5 kGy and 8 kGy electron beam irradiation for optoelectronic devices

NASA Astrophysics Data System (ADS)

Thomas, Prince; Santhosh Kumar, R.; Sreekanth, G.; John, Bitto; Sanjeev, Ganesh; Joseph, Ginson P.

2017-11-01

This paper attempts to elucidate the effect of 5 kGy and 8 kGy electron irradiation on the optical, thermal and electrical properties of a prominent amino acid crystal, L-Arginine Perchlorate (LAPCl) grown by low-temperature solution growth technique. Optical absorption studies revealed that the UV lower cut-off wavelength shift towards the higher wavelength region (Red shift), the optical band gap of LAPCl were found to be decreasing while the Urbach energy was found to be increasing with increasing the dosage of irradiation. Fourier Transform Infrared (FT-IR) spectroscopic result showed that peak intensities corresponding to typical bonding increase with the increase in electron beam irradiation dosage. Electrical studies revealed that the dielectric constant, loss and conductivity of the sample increases with increasing the dosage of irradiation. The behaviour of electrical properties on temperature and thermal properties has also been investigated.

Thermal Shock Behavior of Single Crystal Oxide Refractive Concentrators for High Temperatures Solar Thermal Propulsion

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Choi, Sung R.; Jacobson, Nathan S.; Miller, Robert A.

1999-01-01

Single crystal oxides such as yttria-stabilized zirconia (Y2O3-ZrO2), yttrium-aluminum-garnet (Y3Al5O12, or YAG), magnesium oxide (MgO) and sapphire (Al2O3) have been considered as refractive secondary concentrator materials for high temperature solar propulsion applications. However, thermal mechanical reliability of the oxide components in severe thermal environments during space mission sun/shade transitions is of great concern. In this paper, critical mechanical properties of these oxide crystals are determined by the indentation technique. Thermal shock resistance of the oxides is evaluated using a high power CO, laser under high temperature-high thermal gradients. Thermal stress fracture behavior and failure mechanisms of these oxide materials are investigated under various temperature and heating conditions.

High-temperature sapphire optical sensor fiber coatings

NASA Astrophysics Data System (ADS)

Desu, Seshu B.; Claus, Richard O.; Raheem, Ruby; Murphy, Kent A.

1990-10-01

the filter. These modes may be attributed to a number of material degradation mechanisms, such as thermal shock, oxidation corrosion of the material, mechanical loads, or phase changes in the filter material. Development of high temperature optical fiber (sapphire) sensors embedded in the CXF filters would be very valuable for both monitoring the integrity of the filter during its use and understanding the mechanisms of degradation such that durable filter development will be facilitated. Since the filter operating environment is very harsh, the high temperature sapphire optical fibers need to be protected and for some sensing techniques the fiber must also be coated with low refractive index film (cladding). The objective of the present study is to identify materials and develop process technologies for the application of claddings and protective coatings that are stable and compatible with sapphire fibers at both high temperatures and pressures.

Enhancement of stability of aqueous suspension of alumina nanoparticles by femtosecond laser irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, Youngsang; Ha, Jeonghong; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

2015-09-21

In this work, we report substantially enhanced colloidal stability of aqueous nanoparticle suspensions by ultrashort laser pulse irradiation. A Ti:Sapphire femtosecond laser (wavelength: 800 nm; pulse duration: 50 fs at full width at half maximum) was used to modify the electrochemical properties of nanoparticle suspensions at laser fluences below the particle ablation threshold. The colloidal stability of the suspension was evaluated by zeta potential and dynamic light scattering (DLS). The DLS results along with the images from transmission electron microscopy revealed that the laser irradiation caused no distinct morphological change to the individual alumina particles, but a substantial portion of themore » clustered particles was fragmented by the laser pulses, decreasing the apparent size of the suspended particles. Also, X-ray photoelectron spectroscopy analysis indicates that the laser irradiation modified the surface chemistry of the alumina particles. The stabilizing capability of the proposed technique was turned out to be better than that of conventional ultrasonic treatments. The stability of the laser-treated sample with no added surfactant was maintained for up to 30 days, without requiring an additional homogenizing process such as magnetic stirring.« less

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

NASA Astrophysics Data System (ADS)

Okita, Koshi; Inaba, Katsuhiko; Yatabe, Zenji; Nakamura, Yusui

2018-06-01

ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.

The surface chemistry of sapphire-c: A literature review and a study on various factors influencing its IEP.

PubMed

Lützenkirchen, J; Franks, G V; Plaschke, M; Zimmermann, R; Heberling, F; Abdelmonem, A; Darbha, G K; Schild, D; Filby, A; Eng, P; Catalano, J G; Rosenqvist, J; Preocanin, T; Aytug, T; Zhang, D; Gan, Y; Braunschweig, B

2018-01-01

A wide range of isoelectric points (IEPs) has been reported in the literature for sapphire-c (α-alumina), also referred to as basal plane, (001) or (0001), single crystals. Interestingly, the available data suggest that the variation of IEPs is comparable to the range of IEPs encountered for particles, although single crystals should be much better defined in terms of surface structure. One explanation for the range of IEPs might be the obvious danger of contaminating the small surface areas of single crystal samples while exposing them to comparatively large solution reservoirs. Literature suggests that factors like origin of the sample, sample treatment or the method of investigation all have an influence on the surfaces and it is difficult to clearly separate the respective, individual effects. In the present study, we investigate cause-effect relationships to better understand the individual effects. The reference IEP of our samples is between 4 and 4.5. High temperature treatment tends to decrease the IEP of sapphire-c as does UV treatment. Increasing the initial miscut (i.e. the divergence from the expected orientation of the crystal) tends to increase the IEP as does plasma cleaning, which can be understood assuming that the surfaces have become less hydrophobic due to the presence of more and/or larger steps with increasing miscut or due to amorphisation of the surface caused by plasma cleaning. Pre-treatment at very high pH caused an increase in the IEP. Surface treatments that led to IEPs different from the stable value of reference samples typically resulted in surfaces that were strongly affected by subsequent exposure to water. The streaming potential data appear to relax to the reference sample behavior after a period of time of water exposure. Combination of the zeta-potential measurements with AFM investigations support the idea that atomically smooth surfaces exhibit lower IEPs, while rougher surfaces (roughness on the order of nanometers) result

Numerical Study of Damage Propagation and Dynamic Fracture in Sapphire

DTIC Science & Technology

2016-08-30

NOTICES Disclaimers The findings in this report are not to be construed as an official Department of the Army position unless so...package by using three- dimensional, 180 degrees (reflective) modeling and simulation. This study reports on the ability and the modification of...existing strength and failure material models of Al2O3 to be used as sapphire models for duplication of the experimental fracture and wave propagation in

Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization

NASA Astrophysics Data System (ADS)

Tsai, Chun-Chien; Lee, Yao-Jen; Chiang, Ko-Yu; Wang, Jyh-Liang; Lee, I.-Che; Chen, Hsu-Hsin; Wei, Kai-Fang; Chang, Ting-Kuo; Chen, Bo-Ting; Cheng, Huang-Chung

2007-11-01

In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-μm-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308cm2/Vs as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices.

Doping- and irradiation-controlled pinning of vortices in BaFe 2 (As 1 - x P x ) 2 single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, L.; Jia, Y.; Schlueter, J. A.

We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe 2 (As 1 - x P x ) 2 . Proceeding from optimal doped to overdoped samples, we find a clear transformation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect, followed by a reversible magnetization and Bean-Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in thesemore » materials.« less

Doping- and irradiation-controlled pinning of vortices in BaFe{<_2}(As{<_1-x}P{<_x}){<_2} single crystals.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, L.; Jia, Y.; Schlueter, J. A.

We report on the systematic evolution of vortex pinning behavior in isovalent doped single crystals of BaFe{sub 2}(As{sub 1-x}P{sub x}){sub 2}. Proceeding from optimal doped to overdoped samples, we find a clear transformation of the magnetization hysteresis from a fishtail behavior to a distinct peak effect, followed by a reversible magnetization and Bean-Livingston surface barriers. Strong point pinning dominates the vortex behavior at low fields whereas weak collective pinning determines the behavior at higher fields. In addition to doping effects, we show that particle irradiation by energetic protons can tune vortex pinning in these materials.

A comparison of the doppler-broadened positron annihilation spectra of neutron irradiated Al 2O 3 and MgAl 2O 3

NASA Astrophysics Data System (ADS)

Jones, P. L.; Schaffer, J. P.; Cocks, F. H.; Clinard, F. W.; Hurley, G. F.

1985-01-01

Radiation damage studies of oxides and ceramics have become of increasing importance due to the projected use of these materials in thermonuclear fusion reactors as electronic insulators and first wall materials. In addition these materials are important in RAD waste disposal. As part of a study of the defect structure in radiation damaged ceramics Doppler-broadened positron annihilation spectra have been obtained for a series of single crystal sapphire (α-Al 2O 3) and polycrystal (1:1) and (1:2) magnesium aluminate spinel (MgO·Al 2O 3 and MgO-2Al 2O 3) samples. These samples were irradiated in EBR-II to a fluence of 3 × 10 25 n/m 2 (E > 0.1 MeV) at 740°C, and 2 × 10 26 n/m 2 (E > 0.1 MeV) at ~ 550°C respectively. Positron annihilation spectra lineshapes for the irradiated, annealed, and as-received samples of both materials were compared using S parameter analysis. These calculations were made on deconvoluted gamma ray spectra that were free of any instrumental broadening effects. In this way, absolute S parameter changes could be calculated. The observed changes in the S parameter are consistent with independent volume swelling measurements for both the α-A1 2O 3 and the (1:2) MgAl 2O 4 samples. However, the change in S parameter measured for the (1:1) spinel is contrary to the measured volume change. This apparent anomaly indicates a predominence of interstitial as opposed to vacancy type defects in this material.

Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

NASA Astrophysics Data System (ADS)

Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

2018-01-01

Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

F-aggregate centers formation in BaLiF3 crystals

NASA Astrophysics Data System (ADS)

Prado, L.; Gomes, L.; Baldochi, S. L.; Morato, S. P.; Vieira, N. D.

The kinetics of F-aggregate centers formation is investigated in the inverted fluoroperovskite of BaLiF3 submitted to electron-irradiation. By studies of the changes in the absorption spectra during storage of samples in the dark, at room temperature, it was possible to verify a surprising and interesting dependence on defect formation with the crystal growth direction. In spite of its cubic structure, crystals grown in the <100> and <111> directions and submitted to the same conditions of irradiation, showed in particular, to enhance the production of a defect absorbing at 630 nm in <100> crystals which we believe to correspond to F+2-centers in BaLiF3

Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire.

PubMed

Hwang, Jae-Yeol; Kim, Young-Min; Lee, Kyu Hyoung; Ohta, Hiromichi; Kim, Sung Wng

2017-10-11

Demands on high-quality layer structured two-dimensional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi 0.5 Sb 1.5 Te 3 ) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies.

Study on effect of the surface variation of colloidal silica abrasive during chemical mechanical polishing of sapphire

NASA Astrophysics Data System (ADS)

Bun-Athuek, Natthaphon; Yoshimoto, Yutaka; Sakai, Koya; Khajornrungruang, Panart; Suzuki, Keisuke

2017-07-01

The surface and diameter size variations of colloidal silica particles during the chemical mechanical polishing (CMP) of sapphire substrates were investigated using different particle diameters of 20 and 55 nm. Dynamic light scattering (DLS) results show that the silica particles became larger after CMP under both conditions. The increase in particle size in the slurry was proportional to the material removal amount (MRA) as a function of the removed volume of sapphire substrates by CMP and affected the material removal rate (MRR). Transmission electron microscopy (TEM) images revealed an increase in the size of the fine particles and a change in their surface shape in the slurry. The colloidal silica was coated with the material removed from the substrate during CMP. In this case, the increase in the size of 55 nm diameter particles is larger than that of 20 nm diameter particles. X-ray fluorescence spectrometry (XRF) results indicate that the aluminum element from polished sapphire substrates adhered to the surfaces of silica particles. Therefore, MRR decreases with increasing of polishing time owing to the degradation of particles in the slurry.

Using electron irradiation to probe iron-based superconductors

NASA Astrophysics Data System (ADS)

Cho, Kyuil; Kończykowski, M.; Teknowijoyo, S.; Tanatar, M. A.; Prozorov, R.

2018-06-01

High-energy electron irradiation at low temperatures is an efficient and controlled way to create vacancy–interstitial Frenkel pairs in a crystal lattice, thereby inducing nonmagnetic point-like scattering centers. In combination with London penetration depth and resistivity measurements, the electron irradiation was used as a phase-sensitive probe to study the superconducting order parameter in iron-based superconductors (FeSCs), lending strong support to sign-changing s ± pairing. Here, we review the key results of the effect of electron irradiation in FeSCs.

Unusual paired pattern of radiohaloes on a diamond crystal from Guaniamo (Venezuela)

NASA Astrophysics Data System (ADS)

Schulze, Daniel J.; Nasdala, Lutz

2016-11-01

An octahedral diamond crystal from Guaniamo, Venezuela shows a multitude of round radiocolouration spots that indicate a remarkable formation history. Spots always occur in pairs, with similar spacing and intensity ratio between the two spots of each pair. We interpret this pattern to be the result of long-term irradiation of the stone emanating from a multitude of radioactive point sources. At some point during the irradiation, the stone must have experienced a translational movement which shifted it ca. 50 μm relative to the adjacent material [i.e., the (111) crystal face was a fault plane], after which irradiation continued. The Neoproterozoic age of the Guaniamo kimberlites and the high degree of radiation damage suggest that both of the two irradiation periods lasted over hundreds of millions of years. This interpretation is supported by results of He-irradiation experiments.

Demonstration of finite element simulations in MOOSE using crystallographic models of irradiation hardening and plastic deformation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patra, Anirban; Wen, Wei; Martinez Saez, Enrique

This report describes the implementation of a crystal plasticity framework (VPSC) for irradiation hardening and plastic deformation in the finite element code, MOOSE. Constitutive models for irradiation hardening and the crystal plasticity framework are described in a previous report [1]. Here we describe these models briefly and then describe an algorithm for interfacing VPSC with finite elements. Example applications of tensile deformation of a dog bone specimen and a 3D pre-irradiated bar specimen performed using MOOSE are demonstrated.

Phonon assisted electronic transition in telluric acid ammonium phosphate single crystals

NASA Astrophysics Data System (ADS)

El-Muraikhi, M.; Kassem, M. E.; Al-Houty, L.

The effect of gamma-irradiation on the absorption optical spectra of telluric acid ammonium phosphate single crystals (TAAP) has been studied, in the wave length of 200-600 nm, for samples irradiated by various doses up to 10 Mrad. The results show that the electron phonon coupling constant increases with the irradiation dose.

Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shakthivel, Dhayalan; Rathkanthiwar, Shashwat; Raghavan, Srinivasan, E-mail: sraghavan@cense.iisc.ernet.in

2015-04-28

Si nanowire growth on sapphire substrates by the vapor-liquid-solid (VLS) method using Au catalyst particles has been studied. Sapphire was chosen as the substrate to ensure that the vapor phase is the only source of Si. Three hitherto unreported observations are described. First, an incubation period of 120–480 s, which is shown to be the incubation period as defined in classical nucleation theory, is reported. This incubation period permits the determination of a desolvation energy of Si from Au-Si alloys of 15 kT. Two, transmission electron microscopy studies of incubation, point to Si loss by reverse reaction as an important partmore » of the mechanism of Si nanowire growth by VLS. Three, calculations using these physico-chemical parameters determined from incubation and measured steady state growth rates of Si nanowires show that wire growth happens from a supersaturated catalyst droplet.« less

Method for the preparation of photochromic insulating crystals

DOEpatents

Abraham, Marvin M.; Boldu, Jose L.; Chen, Yok; Orera, Victor M.

1986-01-01

A method for preparing reversible-photochromic magnesium oxide (MgO) crystals. Single crystals of MgO doped with both lithium (Li) and nickel (Ni) are grown by a conventional arc fusion method. The as-grown crystals are characterized by an amber coloration. The crystals lose the amber coloration and become photochromic when they are thermochemically reduced by heating at temperatures greater than 1000.degree. K. in a hydrogen atmosphere. Alternate irradiation with UV and visible light result in rejuvenation and bleaching of the amber coloration, respectively.

High-T(sub c) Edge-geometry SNS Weak Links on Silicon-on-sapphire Substrates

NASA Technical Reports Server (NTRS)

Hunt, B.; Foote, M.; Pike, W.; Barner, J.; Vasquez, R.

1994-01-01

High-quality superconductor/normal-metal/superconductor(SNS) edge-geometry weak links have been produced on silicon-on-sapphire (SOS) substrates using a new SrTiO(sub 3)/'seed layer'/cubic-zirconia (YS2) buffer system.

Irradiation-induced effects of proton irradiation on zirconium carbides with different stoichiometries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Y. Huang; B.R. Maier; T.R. Allen

2014-10-01

Zirconium carbide (ZrC) is being considered for utilization in deep burn TRISO fuel particles for hightemperature, gas-cooled reactors. Zirconium carbide has a cubic B1 type crystal structure along with a very high melting point (3420 ?C), exceptional hardness and good thermal and electrical conductivities. Understanding the ZrC irradiation response is crucial for establishing ZrC as an alternative component in TRISO fuel. Until now, very few studies on irradiation effects on ZrC have been released and fundamental aspects of defect evolution and kinetics are not well understood although some atomistic simulations and phenomenological studies have been performed. This work was carriedmore » out to understand the damage evolution in float-zone refined ZrC with different stoichiometries. Proton irradiations at 800 ?C up to doses of 3 dpa were performed on ZrCx (where x ranges from 0.9 to 1.2) to investigate the damage evolution. The irradiation-induced defects, such as density of dislocation loops, at different stoichiometries and doses which were characterized by transmission electron microscopy (TEM) is presented and discussed.« less

Optogenetic activation of neocortical neurons in vivo with a sapphire-based micro-scale LED probe.

PubMed

McAlinden, Niall; Gu, Erdan; Dawson, Martin D; Sakata, Shuzo; Mathieson, Keith

2015-01-01

Optogenetics has proven to be a revolutionary technology in neuroscience and has advanced continuously over the past decade. However, optical stimulation technologies for in vivo need to be developed to match the advances in genetics and biochemistry that have driven this field. In particular, conventional approaches for in vivo optical illumination have a limitation on the achievable spatio-temporal resolution. Here we utilize a sapphire-based microscale gallium nitride light-emitting diode (μLED) probe to activate neocortical neurons in vivo. The probes were designed to contain independently controllable multiple μLEDs, emitting at 450 nm wavelength with an irradiance of up to 2 W/mm(2). Monte-Carlo stimulations predicted that optical stimulation using a μLED can modulate neural activity within a localized region. To validate this prediction, we tested this probe in the mouse neocortex that expressed channelrhodopsin-2 (ChR2) and compared the results with optical stimulation through a fiber at the cortical surface. We confirmed that both approaches reliably induced action potentials in cortical neurons and that the μLED probe evoked strong responses in deep neurons. Due to the possibility to integrate many optical stimulation sites onto a single shank, the μLED probe is thus a promising approach to control neurons locally in vivo.

Copper doping of ZnO crystals by transmutation of 64Zn to 65Cu: An electron paramagnetic resonance and gamma spectroscopy study

NASA Astrophysics Data System (ADS)

Recker, M. C.; McClory, J. W.; Holston, M. S.; Golden, E. M.; Giles, N. C.; Halliburton, L. E.

2014-06-01

Transmutation of 64Zn to 65Cu has been observed in a ZnO crystal irradiated with neutrons. The crystal was characterized with electron paramagnetic resonance (EPR) before and after the irradiation and with gamma spectroscopy after the irradiation. Major features in the gamma spectrum of the neutron-irradiated crystal included the primary 1115.5 keV gamma ray from the 65Zn decay and the positron annihilation peak at 511 keV. Their presence confirmed the successful transmutation of 64Zn nuclei to 65Cu. Additional direct evidence for transmutation was obtained from the EPR of Cu2+ ions (where 63Cu and 65Cu hyperfine lines are easily resolved). A spectrum from isolated Cu2+ (3d9) ions acquired after the neutron irradiation showed only hyperfine lines from 65Cu nuclei. The absence of 63Cu lines in this Cu2+ spectrum left no doubt that the observed 65Cu signals were due to transmuted 65Cu nuclei created as a result of the neutron irradiation. Small concentrations of copper, in the form of Cu+-H complexes, were inadvertently present in our as-grown ZnO crystal. These Cu+-H complexes are not affected by the neutron irradiation, but they dissociate when a crystal is heated to 900 °C. This behavior allowed EPR to distinguish between the copper initially in the crystal and the copper subsequently produced by the neutron irradiation. In addition to transmutation, a second major effect of the neutron irradiation was the formation of zinc and oxygen vacancies by displacement. These vacancies were observed with EPR.

Up-conversion nanoparticles sensitized inverse opal photonic crystals enable efficient water purification under NIR irradiation

NASA Astrophysics Data System (ADS)

Zhang, Yuanyuan; Wang, Lili; Ma, Xiumei; Ren, Junfeng; Sun, Qinxing; Shi, Yongsheng; Li, Lin; Shi, Jinsheng

2018-03-01

A novel porous monolayer inverse opal (IO) structure was prepared by a simple sol-gel method combined with a self-assembly PS photonic crystal (PC) as template. By prolonging deposition time of PS spheres, three-dimensional multilayer TiO2 IOPC was also fabricated. Up-conversion nanoparticles (UCNPs) were selected to sensitize TiO2 IOPCs. Photocatalytic activity of as-prepared materials was investigated by disinfection of bacteria and organic pollutant degradation. Under NIR light irradiation, a large improvement in bacterial inactivation and photodegradation efficiency could be seen for NYF/TiO2 composites in comparison with other samples. As for monolayer NYF/TiO2, water disinfection of 100% inactivation of bacteria is realized within 11 h and kinetic constant of RhB degradation is 0.133 h-1, which is about 10 times higher than that of pure TiO2 IOPCs. Reasons of enhanced photocatalytic activity were systematically investigated and a possible mechanism for NIR-driven photocatalysis was reasonably proposed.

"You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

ERIC Educational Resources Information Center

Pappas, Christine

2007-01-01

Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

NASA Astrophysics Data System (ADS)

Cheng, Zongzhe; Hanke, Michael; Vogt, Patrick; Bierwagen, Oliver; Trampert, Achim

2017-10-01

Heteroepitaxial Ga2O3 was deposited on c-plane and a-plane oriented sapphire by plasma-assisted molecular beam epitaxy and probed by ex-situ and in-situ synchrotron-based x-ray diffraction. The investigation on c-plane sapphire determined a critical thickness of around 33 Å, at which the monoclinic β-phase forms on top of the hexagonal α-phase. A 143 Å thick single phase α-Ga2O3 was observed on a-plane sapphire, much thicker than the α-Ga2O3 on c-plane sapphire. The α-Ga2O3 relaxed very fast in the first 30 Å in both out-of-plane and in-plane directions as measured by the in-situ study.

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

PubMed

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-11-04

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

NASA Astrophysics Data System (ADS)

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-11-01

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

PubMed Central

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-01-01

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer. PMID:27812006

Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates

NASA Astrophysics Data System (ADS)

Jmerik, V. N.; Kuznetsova, N. V.; Nechaev, D. V.; Shubina, T. V.; Kirilenko, D. A.; Troshkov, S. I.; Davydov, V. Yu.; Smirnov, A. N.; Ivanov, S. V.

2017-11-01

The site-controlled selective area growth of N-polar GaN nanorods (NR) was developed by plasma-assisted MBE (PA MBE) on micro-cone-patterned sapphire substrates (μ-CPSS) by using a two-stage growth process. A GaN nucleation layer grown by migration enhanced epitaxy provides the best selectivity for nucleation of NRs on the apexes of 3.5-μm-diameter cones, whereas the subsequent growth of 1-μm-high NRs with a constant diameter of about 100 nm proceeds by standard high-temperature PA MBE at nitrogen-rich conditions. These results are explained by anisotropy of the surface energy for GaN of different polarity and crystal orientation. The InGaN single quantum wells inserted in the GaN NRs grown on the μ-CPSS demonstrate photoluminescence at 510 nm with a spatially periodic variation of its intensity with a period of ∼6 μm equal to that of the substrate patterning profile.

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

NASA Astrophysics Data System (ADS)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD

NASA Astrophysics Data System (ADS)

Sivanathan, P. C.; Shuhaimi, Ahmad; Hamza, Hebal; Kowsz, Stacy J.; Abdul Khudus, Muhammad I. M.; Li, Hongjian; Allif, Kamarul

2018-07-01

The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission. Growth temperature plays a key role determining the peak wavelength of a quantum well. The study was carried out by growing quantum wells, MQWs on the whole sapphire at 716 °C and observed peak wavelength at 463 nm. While the bulk GaN substrate with sapphire corral grown at 703 °C and observed a blueshift at 433 nm peak wavelength. These results contradict that of typical observation of wavelength emission inversely proportional to the growth temperature. On the other hand, the growth of GaN-sapphire and GaN-silicon at similar conditions emits 435 nm and 450 nm respectively. The heat interaction of bulk GaN substrates surrounded by the sapphire corral exhibits different growth conditions in multi-quantum wells when compared to that of a whole sapphire substrate (absence of bulk GaN). The predicated surface temperature of bulk GaN substrate is 10 °C-15 °C of more than the corral sapphire. This observation may link to the difference in the thermal distribution of the growth surface corresponding to the different thermal conductivity ratio. The photoluminescence and computational techniques were used to understand in-depth of the heat interaction.

Measurement of ultrashort laser pulses using single-crystal films of 4-aminobenzophenone

NASA Astrophysics Data System (ADS)

Bhowmik, Achintya K.; Tan, Shida; Ahyi, Ayayi C.; Dharmadhikari, J. A.; Dharmadhikari, A. K.; Mathur, D.

2007-12-01

Single-crystal thin-film of an organic second-order nonlinear optical material, 4-aminobenzophenone (ABP), is used to measure the pulsewidth of a Ti-Sapphire laser producing ˜45 fs pulses at 1 kHz repetition rate, by the non-collinear second-harmonic generation (SHG) intensity autocorrelation technique. These films are suitable for measurements over a broad wavelength range, down to 780 nm, due to their wide optical transparency. The single-crystal film with thickness (˜3 μm) less than the coherence length requires no phase-matching for efficient broadband SHG. Pulse walk-off due to group-velocity mismatch (GVM) and temporal broadening of the pulses due to group-velocity dispersion (GVD) are found to be negligible. These effects have been estimated for pulse width down to few-cycle pulses (˜10 fs), and the analyses show that these films can be used to characterize such ultrashort optical pulses.

Method for the preparation of photochromic insulating crystals

DOEpatents

Abraham, M.M.; Boldu, J.L.; Chen, Y.; Orera, V.M.

1984-09-28

A method for preparing reversible-photochromic magnesium oxide (MgO) crystals is disclosed. Single crystals of MgO doped with both lithium (Li) and nickel (Ni) are grown by a conventional arc fusion method. The as-grown crystals are characterized by an amber coloration. The crystals lose the amber coloration and become photochromic when they are thermochemically reduced by heating at temperatures greater then 1000/sup 0/K in a hydrogen atmosphere. Alternate irradiation with uv and visible light result in rejuvenation and bleaching of the amber coloration, respectively.

High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

2018-03-01

Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling, E-mail: hlkao@cycu.edu.tw

2015-05-15

AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructedmore » with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.« less

Crystal MD: The massively parallel molecular dynamics software for metal with BCC structure

NASA Astrophysics Data System (ADS)

Hu, Changjun; Bai, He; He, Xinfu; Zhang, Boyao; Nie, Ningming; Wang, Xianmeng; Ren, Yingwen

2017-02-01

Material irradiation effect is one of the most important keys to use nuclear power. However, the lack of high-throughput irradiation facility and knowledge of evolution process, lead to little understanding of the addressed issues. With the help of high-performance computing, we could make a further understanding of micro-level-material. In this paper, a new data structure is proposed for the massively parallel simulation of the evolution of metal materials under irradiation environment. Based on the proposed data structure, we developed the new molecular dynamics software named Crystal MD. The simulation with Crystal MD achieved over 90% parallel efficiency in test cases, and it takes more than 25% less memory on multi-core clusters than LAMMPS and IMD, which are two popular molecular dynamics simulation software. Using Crystal MD, a two trillion particles simulation has been performed on Tianhe-2 cluster.

Structural defects caused by swift ions in fluorite single crystals

NASA Astrophysics Data System (ADS)

Assylbayev, Ruslan; Lushchik, Aleksandr; Lushchik, Cheslav; Kudryavtseva, Irina; Shablonin, Evgeni; Vasil'chenko, Evgeni; Akilbekov, Abdirash; Zdorovets, Maxim

2018-01-01

A comparative study of radiation damage caused by the irradiation of oxygen-free calcium fluoride single crystals with ∼GeV 132Xe or 209Bi heavy ions, 100-keV light hydrogen ions (protons) or X-rays at room temperature has been performed. Optical absorption in a wide spectral region from NIR to VUV (1.5-10.5 eV), its dependence on stepwise preheating of the irradiated CaF2 crystals to a certain temperature as well as thermally stimulated luminescence accompanying the main annealing stages have been analyzed. It is shown that in addition to different F-type aggregates, Ca colloids and trifluorine quasi-molecules, complex and temperature stable structural defects responsible for VUV absorption (in particular, the 9.8 eV band) are induced in CaF2 only after irradiation with swift heavy ions. The origin and tentative creation mechanisms of such defects as well as the features of the used irradiation types are considered.

Visual observation of gas hydrates nucleation and growth at a water - organic liquid interface

NASA Astrophysics Data System (ADS)

Stoporev, Andrey S.; Semenov, Anton P.; Medvedev, Vladimir I.; Sizikov, Artem A.; Gushchin, Pavel A.; Vinokurov, Vladimir A.; Manakov, Andrey Yu.

2018-03-01

Visual observation of nucleation sites of methane and methane-ethane-propane hydrates and their further growth in water - organic liquid - gas systems with/without surfactants was carried out. Sapphire Rocking Cell RCS6 with transparent sapphire cells was used. The experiments were conducted at the supercooling ΔTsub = 20.2 °C. Decane, toluene and crude oils were used as organics. Gas hydrate nucleation occurred on water - metal - gas and water - sapphire - organic liquid three-phase contact lines. At the initial stage of growth hydrate crystals rapidly covered the water - gas or water - organics interfaces (depending on the nucleation site). Further hydrate phase accrete on cell walls (sapphire surface) and into the organics volume. At this stage, growth was accompanied by water «drawing out» from under initial hydrate film formed at water - organic interface. Apparently, it takes place due to water capillary inflow in the reaction zone. It was shown that the hydrate crystal morphology depends on the organic phase composition. In the case of water-in-decane emulsion relay hydrate crystallization was observed in the whole sample, originating most likely due to the hydrate crystal intergrowth through decane. Contacts of such crystals with adjacent water droplets result in rapid hydrate crystallization on this droplet.

Optical properties of (AlxGa1-x)2O3 on sapphire

NASA Astrophysics Data System (ADS)

Hu, Zhuangzhuang; Feng, Qian; Zhang, Jincheng; Li, Fuguo; Li, Xiang; Feng, Zhaoqing; Zhang, Chunfu; Hao, Yue

2018-02-01

The (AlxGa1-x)2O3 and Ga2O3 films are epitaxially grown on sapphire by pulsed laser deposition (PLD). From X-ray photoelectron spectroscopy (XPS) and X-ray diffraction measurements, the (AlxGa1-x)2O3 films with Al compositions of 0.39, 0.49 and up to 0.53 are all single crystal and there is an out-of-plane tensile strain in (AlxGa1-x)2O3 films within the range from 0.164% to 0.345%. The optical properties are investigated by Spectral Ellipsometry (SE) together with the optical transmission method. The spectral dependence of the refractive index (n) by SE is in accordance with the reported experiment results. The thicknesses of the Ga2O3 and (AlxGa1-x)2O3 films obtained by SE fitting are 201, 116.8, 40 and 84.61 nm, respectively, which is consistent with the field emission scanning electron microscopy (FESEM) measurement results. In addition, with the Al composition increasing, the bandgaps of the (AlxGa1-x)2O3 films determined from the SE are both increase from 4.95 to 5.49, 5.7 and 5.75 eV, almost identical to the values determined by the transmittance spectra, which is larger than some extent compared to reference [13] for the compressive strain in the (AlxGa1-x)2O3 films.

Growth of GaN on Sapphire via Low-Temperature Deposited Buffer Layer and Realization of p-Type GaN by Mg Doping Followed by Low-Energy Electron Beam Irradiation

NASA Astrophysics Data System (ADS)

Amano, Hiroshi

2015-12-01

This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid- to late 80s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p-type GaN was established are reviewed.

F + centre generation in MgO crystals at high density of excitation by accelerated electrons of subthreshold energy

NASA Astrophysics Data System (ADS)

Annenkov, Y. M.; Surzhikov, A. P.; Surzhikov, V. P.; Pogrebnjak, A. D.

1981-07-01

Optical absorption spectra and the angular distribution of annihilated positrons in MgO crystals irradiated by subtreshold superdense electron pulses are measured. The experimental results obtained show the effective contribution of the creation mechanism of non-impact radiation defects in MgO crystals at the highest electron irradiation densities.

Forward to cryogenic temperature: laser cooling of Yb: LuLiF crystal

NASA Astrophysics Data System (ADS)

Zhong, Biao; Luo, Hao; Lei, Yongqing; Shi, Yanling; Yin, Jianping

2017-06-01

The high quality Yb-doped fluoride crystals have broad prospects for optical refrigeration. We have laser cooled the Yb:LuLiF crystal to a temperature below the limit of current thermoelectric coolers ( 180 K). The 5% Yb:LuLiF crystal sample has a geometry of 2 mm×2 mm×5 mm and was supported by two fibers of 200 μm in diameter. They were placed in a 2×10-4 Pa vacuum chamber with an environment temperature of 294.5 K. The 1019 nm CW laser of power 38.7 W was adopted to irradiate the sample. The temperature of the sample was measured utilizing the DLT methods. After 20 minutes of laser irradiation, the 5% Yb:LuLiF crystal sample was cooled down to 182.4 K. By further optimizing experimental conditions and increasing the doped Yb concentration, the Yb:LuLiF crystal might be optically cooled below the cryogenic temperature of 123K in the near future.

The Valence- and Conduction-Band Structure of the Sapphire (1102) Surface.

DTIC Science & Technology