Thermally induced effect on sub-band gap absorption in Ag doped CdSe thin films

NASA Astrophysics Data System (ADS)

Kaur, Jagdish; Sharma, Kriti; Bharti, Shivani; Tripathi, S. K.

2015-05-01

Thin films of Ag doped CdSe have been prepared by thermal evaporation using inert gas condensation (IGC) method taking Argon as inert gas. The prepared thin films are annealed at 363 K for one hour. The sub-band gap absorption spectra in the as deposited and annealed thin films have been studied using constant photocurrent method (CPM). The absorption coefficient in the sub-band gap region is described by an Urbach tail in both as deposited and annealed thin films. The value of Urbach energy and number density of trap states have been calculated from the absorption coefficient in the sub-band gap region which have been found to increase after annealing treatment indicating increase in disorderness in the lattice. The energy distribution of the occupied density of states below Fermi level has also been studied using derivative procedure of absorption coefficient.

Structural and optical properties of PbS thin films grown by chemical bath deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seghaier, S.; Kamoun, N.; Guasch, C.

2007-09-19

Lead sulphide thin films are grown on glass substrates at various deposition times tD, in the range of 40-60 min per step of 2 min, using the chemical bath deposition technique. X-ray diffraction and atomic force microscopy are used to characterize the film structure. The surface composition is analysed by Auger electron spectroscopy. It appears that the as-prepared thin films are polycrystalline with cubic structure. Nanometric scale crystallites are uniformly distributed on the surface. They exhibit almost a stoechiometric composition with a [Pb]/[S] ratio equal to 1.10. Optical properties are studied in the range of 300-3300 nm by spectrophotometric measurements.more » Analysis of the optical absorption data of lead sulphide thin layers reveals a narrow optical direct band gap equal to 0.46 eV for the layer corresponding to a deposition time equal to 60 min.« less

Physical properties of high performance fluoride ion conductor BaSnF4 thin films by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Patro, L. N.; Ravi Chandra Raju, N.; Meher, S. R.; Kamala Bharathi, K.

2013-09-01

This article presents the results on the growth and characterization of BaSnF4 thin films on glass substrates prepared by pulsed laser deposition technique. The structural results of BaSnF4 thin film carried out by glancing angle X-ray diffraction technique indicates the formation of the film with similar structure (tetragonal, P4/nmm) to the bulk target material. The absorption coefficient and band gap of the film is determined by suitable analysis of the transmittance spectra. The transport properties of the thin films are studied using impedance spectroscopy in the temperature range of 323-573 K. The frequency-dependent imaginary part of impedance plot shows that the conductivity relaxation is non-Debye in nature. The scaling behavior of the imaginary part of impedance at various frequencies indicates temperature-independent relaxation behavior.

Programmable Electrochemical Rectifier Based on a Thin-Layer Cell.

PubMed

Park, Seungjin; Park, Jun Hui; Hwang, Seongpil; Kwak, Juhyoun

2017-06-21

A programmable electrochemical rectifier based on thin-layer electrochemistry is described here. Both the rectification ratio and the response time of the device are programmable by controlling the gap distance of the thin-layer electrochemical cell, which is easily controlled using commercially available beads. One of the electrodes was modified using a ferrocene-terminated self-assembled monolayer to offer unidirectional charge transfers via soluble redox species. The thin-layer configuration provided enhanced mass transport, which was determined by the gap thickness. The device with the smallest gap thickness (∼4 μm) showed an unprecedented, high rectification ratio (up to 160) with a fast response time in a two-terminal configuration using conventional electronics.

Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hayashi, Kazushi, E-mail: hayashi.kazushi@kobelco.com; Hino, Aya; Tao, Hiroaki

Total photoyield emission spectroscopy (TPYS) was applied to study the evolution of sub-gap states in hydrogen-treated amorphous In-Ga-Zn-O (a-IGZO) thin films. The a-IGZO thin films were subjected to hydrogen radicals and subsequently annealed in ultra-high vacuum (UHV) conditions. A clear onset of the electron emission was observed at around 4.3 eV from the hydrogen-treated a-IGZO thin films. After successive UHV annealing at 300 °C, the onset in the TPYS spectra was shifted to 4.15 eV, and the photoelectron emission from the sub-gap states was decreased as the annealing temperature was increased. In conjunction with the results of thermal desorption spectrometer, it was deducedmore » that the hydrogen atoms incorporated in the a-IGZO thin films induced metastable sub-gap states at around 4.3 eV from vacuum level just after the hydrogenation. It was also suggested that the defect configuration was changed due to the higher temperature UHV annealing, and that the hydrogen atoms desorbed with the involvement of Zn atoms. These experiments produced direct evidence to show the formation of sub-gap states as a result of hydrogen incorporation into the a-IGZO thin films.« less

Relativistic space-charge-limited current for massive Dirac fermions

NASA Astrophysics Data System (ADS)

Ang, Y. S.; Zubair, M.; Ang, L. K.

2017-04-01

A theory of relativistic space-charge-limited current (SCLC) is formulated to determine the SCLC scaling, J ∝Vα/Lβ , for a finite band-gap Dirac material of length L biased under a voltage V . In one-dimensional (1D) bulk geometry, our model allows (α ,β ) to vary from (2,3) for the nonrelativistic model in traditional solids to (3/2,2) for the ultrarelativistic model of massless Dirac fermions. For 2D thin-film geometry we obtain α =β , which varies between 2 and 3/2, respectively, at the nonrelativistic and ultrarelativistic limits. We further provide rigorous proof based on a Green's-function approach that for a uniform SCLC model described by carrier-density-dependent mobility, the scaling relations of the 1D bulk model can be directly mapped into the case of 2D thin film for any contact geometries. Our simplified approach provides a convenient tool to obtain the 2D thin-film SCLC scaling relations without the need of explicitly solving the complicated 2D problems. Finally, this work clarifies the inconsistency in using the traditional SCLC models to explain the experimental measurement of a 2D Dirac semiconductor. We conclude that the voltage scaling 3 /2 <α <2 is a distinct signature of massive Dirac fermions in a Dirac semiconductor and is in agreement with experimental SCLC measurements in MoS2.

The calculation of band gap energy in zinc oxide films

NASA Astrophysics Data System (ADS)

Arif, Ali; Belahssen, Okba; Gareh, Salim; Benramache, Said

2015-01-01

We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor; the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques. The thin films were deposited at different substrate temperatures ranging between 200 and 500 °C. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96-0.99999, indicating high quality representation of data based on Equation (2), so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy.

Simulations of shear-thinning frictional non-Brownian suspensions

NASA Astrophysics Data System (ADS)

Lemaire, Elisabeth; Lobry, Laurent; Blanc, Frederic; Peters, Francois; RSC Team

2017-11-01

Most non-Brownian suspensions exhibit non-Newtonian behaviours such as anisotropic normal stresses, shear-thickening or shear-thinning. The later is still largely an open question. Acrivos wet al. (JoR 1994) proposed that particle resuspension is responsible for the apparent shear-thinning behavior in a cylindrical Couette rheometer. Another explanation has been suggested by Vasquez-Quesada et al. (PRL 2017), who noticed that some polymeric suspending liquids themselves are shear-thinning for the high shear-rate values involved in the narrow gaps between particles. Here we propose that the shear-thinning behaviour is directly connected to the solid contact between particles that has been shown to play a crucial role in the rheological behaviour of concentrated non-Brownian suspensions. In particular, it has been recently shown that frictional contact between particles greatly enhances the viscosity. Even though the friction coefficient between macroscopic surfaces does not depend on the load, it may be not the case at the scale of the low load contact between particles in suspensions. Here, we present discrete numerical simulations where the friction coefficient decreases with the interparticle forces. The obtained shear-thinning behaviour is in good agreement with our experiments.

Attachment of lead wires to thin film thermocouples mounted on high temperature materials using the parallel gap welding process

NASA Technical Reports Server (NTRS)

Holanda, Raymond; Kim, Walter S.; Pencil, Eric; Groth, Mary; Danzey, Gerald A.

1990-01-01

Parallel gap resistance welding was used to attach lead wires to sputtered thin film sensors. Ranges of optimum welding parameters to produce an acceptable weld were determined. The thin film sensors were Pt13Rh/Pt thermocouples; they were mounted on substrates of MCrAlY-coated superalloys, aluminum oxide, silicon carbide and silicon nitride. The entire sensor system is designed to be used on aircraft engine parts. These sensor systems, including the thin-film-to-lead-wire connectors, were tested to 1000 C.

Low-Impedance Compact Modulators Capable of Generating Intense Ultra-fast Rising Nanosecond Waveforms

DTIC Science & Technology

2006-10-31

spark gap is shown in Fig. 1. The Blumleins were constructed from copper plates separated by laminated layered Kapton (polyimide) dielectrics. Scaling... convolution factor. The diamond/GaAs heterojunction response is limited to a very thin layer across the cross section between amorphic diamond and GaAs...were fastened to electrode mounts and passed through the cast material of the base before it hardened. A thick kapton laminate 1.2 cm wide separated

Evolution of dielectric function of Al-doped ZnO thin films with thermal annealing: effect of band gap expansion and free-electron absorption.

PubMed

Li, X D; Chen, T P; Liu, Y; Leong, K C

2014-09-22

Evolution of dielectric function of Al-doped ZnO (AZO) thin films with annealing temperature is observed. It is shown that the evolution is due to the changes in both the band gap and the free-electron absorption as a result of the change of free-electron concentration of the AZO thin films. The change of the electron concentration could be attributed to the activation of Al dopant and the creation/annihilation of the donor-like defects like oxygen vacancy in the thin films caused by annealing.

Structural and optical properties of ITO and Cu doped ITO thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope

PubMed Central

Nazin, G. V.; Wu, S. W.; Ho, W.

2005-01-01

The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks corresponding to the individual vibronic states depends on the relative electron tunneling rates through the two barriers of the junction, as found by varying the vacuum gap tunneling rate by changing the height of the scanning tunneling microscope tip above the molecule. A simple, sequential tunneling model explains the observed trends. PMID:15956189

Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope.

PubMed

Nazin, G V; Wu, S W; Ho, W

2005-06-21

The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks corresponding to the individual vibronic states depends on the relative electron tunneling rates through the two barriers of the junction, as found by varying the vacuum gap tunneling rate by changing the height of the scanning tunneling microscope tip above the molecule. A simple, sequential tunneling model explains the observed trends.

Thinning of young Douglas-fir forests decreases density of northern flying squirrels in the Oregon Cascades

USGS Publications Warehouse

Manning, Tom; Hagar, Joan C.; McComb, Brenda C.

2012-01-01

Large-scale commercial thinning of young forests in the Pacific Northwest is currently promoted on public lands to accelerate the development of late-seral forest structure for the benefit of wildlife species such as northern spotted owls (Strix occidentalis caurina) and their prey, including the northern flying squirrel (Glaucomys sabrinus). Attempts to measure the impact of commercial thinning on northern flying squirrels have mostly addressed short-term effects (2–5 years post-thinning) and the few published studies of longer-term results have been contradictory. We measured densities of northern flying squirrels 11–13 years after thinning of young (55–65 years) Douglas-fir forest stands in the Cascade Range of Oregon, as part of the Young Stand Thinning & Diversity Study. The study includes four replicate blocks, each consisting of an unthinned control stand and one stand each of the following thinning treatments: Heavy Thin; Light Thin; and Light Thin with Gaps. Thinning decreased density of northern flying squirrels, and squirrel densities were significantly lower in heavily thinned stands than in more lightly thinned stands. Regression analysis revealed a strong positive relationship of flying squirrel density with density of large (>30 cm diameter) standing dead trees and a negative relationship with percent cover of low understory shrubs. Maintaining sufficient area and connectivity of dense, closed canopy forest is recommended as a strategy to assure that long-term goals of promoting late-seral structure do not conflict with short-term habitat requirements of this important species.

Enhancement of gaps in thin graphitic films for heterostructure formation

NASA Astrophysics Data System (ADS)

Hague, J. P.

2014-04-01

There are a large number of atomically thin graphitic films with a structure similar to that of graphene. These films have a spread of band gaps relating to their ionicity and, also, to the substrate on which they are grown. Such films could have a range of applications in digital electronics, where graphene is difficult to use. I use the dynamical cluster approximation to show how electron-phonon coupling between film and substrate can enhance these gaps in a way that depends on the range and strength of the coupling. It is found that one of the driving factors in this effect is a charge density wave instability for electrons on a honeycomb lattice that can open a gap in monolayer graphene. The enhancement at intermediate coupling is sufficiently large that spatially varying substrates and superstrates could be used to create heterostructures in thin graphitic films with position-dependent electron-phonon coupling and gaps, leading to advanced electronic components.

Thin film solar cell including a spatially modulated intrinsic layer

DOEpatents

Guha, Subhendu; Yang, Chi-Chung; Ovshinsky, Stanford R.

1989-03-28

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

How empty are disk gaps opened by giant planets?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fung, Jeffrey; Shi, Ji-Ming; Chiang, Eugene, E-mail: fung@astro.utoronto.ca

2014-02-20

Gap clearing by giant planets has been proposed to explain the optically thin cavities observed in many protoplanetary disks. How much material remains in the gap determines not only how detectable young planets are in their birth environments, but also how strong co-rotation torques are, which impacts how planets can survive fast orbital migration. We determine numerically how the average surface density inside the gap, Σ{sub gap}, depends on planet-to-star mass ratio q, Shakura-Sunyaev viscosity parameter α, and disk height-to-radius aspect ratio h/r. Our results are derived from our new graphics processing unit accelerated Lagrangian hydrodynamical code PEnGUIn and aremore » verified by independent simulations with ZEUS90. For Jupiter-like planets, we find Σ{sub gap}∝q {sup –2.2}α{sup 1.4}(h/r){sup 6.6}, and for near brown dwarf masses, Σ{sub gap}∝q {sup –1}α{sup 1.3}(h/r){sup 6.1}. Surface density contrasts inside and outside gaps can be as large as 10{sup 4}, even when the planet does not accrete. We derive a simple analytic scaling, Σ{sub gap}∝q {sup –2}α{sup 1}(h/r){sup 5}, that compares reasonably well to empirical results, especially at low Neptune-like masses, and use discrepancies to highlight areas for progress.« less

Thin film fabrication and system integration test run for a microactuator for a tuneable lens

NASA Astrophysics Data System (ADS)

Hoheisel, Dominik; Rissing, Lutz

2014-03-01

An electromagnetic microactuator, for controlling of a tuneable lens, with an integrated electrostatic element is fabricated by thin film technology. The actuator consists of two parts: the first part with microcoil and flux guide and the second part with a ring shaped back iron on a polyimide membrane. The back iron is additionally useable as electrode for electrostatic measurement of the air gap and for electrostatic actuation. By attracting the back iron an optical liquid is displaced and forms a liquid lens inside the back iron ring covered by the membrane. For testing the thin film fabrication sequence, up-scaled systems are generated in a test run. To fabricate the flux guide in an easy and quick way, a Ni-Fe foil with a thickness of 50 μm is laminated on the Si-wafer. This foil is also utilized in the following fabrication sequence as seed layer for electroplating. Compared to Ni-Fe structures deposited by electroplating, the foil is featuring better soft magnetic properties. The foil is structured by wet chemical etching and the backside of the wafer is structured by deep reactive ion etching (DRIE). For post fabrication thinning, the polyimide membrane is treated by oxygen plasma etching. To align the back iron to the microcoil and the flux guide, a flip-chip-bonder is used during test run of system integration. To adjust a constant air gap, a water solvable polymer is tested. A two component epoxy and a polyimide based glue are compared for their bonding properties of the actuator parts.

The role of ultra-thin SiO2 layers in metal-insulator-semiconductor (MIS) photoelectrochemical devices (Presentation Recording)

NASA Astrophysics Data System (ADS)

Esposito, Daniel V.

2015-08-01

Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.

Thin-Film Evaporative Cooling for Side-Pumped Laser

NASA Technical Reports Server (NTRS)

Stewart, Brian K. (Inventor)

2010-01-01

A system and method are provided for cooling a crystal rod of a side-pumped laser. A transparent housing receives the crystal rod therethrough so that an annular gap is defined between the housing and the radial surface of the crystal rod. A fluid coolant is injected into the annular gap such the annular gap is partially filled with the fluid coolant while the radial surface of the crystal rod is wetted as a thin film all along the axial length thereof.

Deposition and characterization of ZnSe nanocrystalline thin films

NASA Astrophysics Data System (ADS)

Temel, Sinan; Gökmen, F. Özge; Yaman, Elif; Nebi, Murat

2018-02-01

ZnSe nanocrystalline thin films were deposited at different deposition times by using the Chemical Bath Deposition (CBD) technique. Effects of deposition time on structural, morphological and optical properties of the obtained thin films were characterized. X-ray diffraction (XRD) analysis was used to study the structural properties of ZnSe nanocrystalline thin films. It was found that ZnSe thin films have a cubic structure with a preferentially orientation of (111). The calculated average grain size value was about 28-30 nm. The surface morphology of these films was studied by the Field Emission Scanning Electron Microscope (FESEM). The surfaces of the thin films were occurred from small stacks and nano-sized particles. The band gap values of the ZnSe nanocrystalline thin films were determined by UV-Visible absorption spectrum and the band gap values were found to be between 2.65-2.86 eV.

A study on micro-structural and optical parameters of InxSe1-x thin film

NASA Astrophysics Data System (ADS)

Patel, P. B.; Desai, H. N.; Dhimmar, J. M.; Modi, B. P.

2018-04-01

Thin film of Indium Selenide (InSe) has been deposited by thermal evaporation technique onto pre cleaned glass substrate under high vacuum condition. The micro-structural and optical properties of InxSe1-x (x = 0.6, 1-x = 0.4) thin film have been characterized by X-ray diffractrometer (XRD) and UV-Visible spectrophotometer. The XRD spectra showed that InSe thin film has single phase hexagonal structure with preferred orientation along (1 1 0) direction. The micro-structural parameters (crystallite size, lattice strain, dislocation density, domain population) for InSe thin film have been calculated using XRD spectra. The optical parameters (absorption, transmittance, reflectance, energy band gap, Urbach energy) of InSe thin film have been evaluated from absorption spectra. The direct energy band gap and Urbach energy of InSe thin film is found to be 1.90 eV and 235 meV respectively.

Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

NASA Astrophysics Data System (ADS)

Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

2016-11-01

In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

Analytic theory for the selection of Saffman-Taylor fingers in the presence of thin film effects

NASA Technical Reports Server (NTRS)

Tanveer, S.

1989-01-01

An analytic theory is presented for the width selection of Saffman-Taylor fingers in the presence of thin film effect. In the limit of small capillary number Ca and small gap to width ratio epsilon, such that epsilon much less than Ca much less than 1, it is found that fingers with relative width lambda less than 1/2 are possible such that lambda squared (1-lambda)/(1-2 lambda) = k epsilon/Ca(sup 3/2), where the positive constant k depends on the branch of solution and equals 2.776 for the first branch. A fully nonlinear analysis is necessary in this problem even to obtain the correct scaling law. It is also shown how in principle, the selection rule for arbitrary Ca can be obtained.

A Theoretical and Experimental Study for a Developing Flow in a Thin Fluid Gap

NASA Astrophysics Data System (ADS)

Wu, Qianhong; Lang, Ji; Jen, Kei-Peng; Nathan, Rungun; Vucbmss Team

2016-11-01

In this paper, we report a novel theoretical and experimental approach to examine a fast developing flow in a thin fluid gap. Although the phenomena are widely observed in industrial applications and biological systems, there is a lack of analytical approach that captures the instantaneous fluid response to a sudden impact. An experimental setup was developed that contains a piston instrumented with a laser displacement sensor and a pressure transducer. A sudden impact was imposed on the piston, creating a fast compaction on the thin fluid gap underneath. The motion of the piston was captured by the laser displacement sensor, and the fluid pressure build-up and relaxation was recorded by the pressure transducer. For this dynamic process, a novel analytical approach was developed. It starts with the inviscid limit when the viscous fluid effect has no time to appear. This short process is followed by a developing flow, in which the inviscid core flow region decreases and the viscous wall region increases until the entire fluid gap is filled with viscous fluid flow. A boundary layer integral method is used during the process. Lastly, the flow is completely viscous dominant featured by a typical squeeze flow in a thin gap. Excellent agreement between the theory and the experiment was achieved. The study presented herein, filling the gap in the literature, will have broad impact in industrial and biomedical applications. This research was supported by the National Science Foundation under Award #1511096.

Effect of Selectively Etched Ferroelectric Thin-Film Layer on the Performance of a Tunable Bandpass Filter

NASA Technical Reports Server (NTRS)

Subramanyam, Guru; Vignesparamoorthy, Sivaruban; Mueller, Carl; VanKeuls, Fred; Warner, Joseph; Miranda, Felix A.

2001-01-01

The main purpose of this work is to study the effect of a selectively etched ferroelectric thin film layer on the performance of an electrically tunable filter. An X-band tunable filter was designed, fabricated and tested on a selectively etched Barium Strontium Titanate (BSTO) ferroelectric thin film layer. Tunable filters with varying lengths of BSTO thin-film in the input and output coupling gaps were modeled, as well as experimentally tested. Experimental results showed that filters with coupling gaps partially filled with BSTO maintained frequency tunability and improved the insertion loss by approx. 2dB. To the best of our knowledge, these results represent the first experimental demonstration of the advantages of selective etching in the performance of thin film ferroelectric-based tunable microwave components.

Band gap and conductivity variations of ZnO nano structured thin films annealed under Vacuum

NASA Astrophysics Data System (ADS)

Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny

2015-02-01

Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). The samples were annealed under vacuum and conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. All the results were compared with that of the sample annealed under air. It was observed that the band gap decreases and concequently conductivity of the samples increases when the samples are annealed under vacuum.

Band gap and conductivity variations of ZnO thin films by doping with Aluminium

NASA Astrophysics Data System (ADS)

Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny

2015-02-01

Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). Aluminium was doped for different doping concentrations from 3 at.% to 12 at.% in steps of 3 at.%. Conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. It was observed that as the doping concentration of Aluminium increases, the band gap of the samples decreases and concequently conductivity of the samples increases.

Moving contact lines in partial wetting: bridging the gap across the scales

NASA Astrophysics Data System (ADS)

Pahlavan, Amir; Cueto-Felgueroso, Luis; McKinley, Gareth; Juanes, Ruben

2017-11-01

The spreading and dewetting of liquid films on solid substrates is a common phenomenon in nature and industry from a snail secreting a mucosal film to printing and coating processes. A quantitative description of these phenomena, however, requires a detailed understanding of the flow physics at the nanoscale as the intermolecular interactions become important close to the contact line. Classical hydrodynamic theory describes wetting as an interplay between viscous and interfacial forces, neglecting the intermolecular interactions, leading to a paradox known as the moving contact line singularity. By contrast, molecular kinetic theory describes wetting as an activated process, neglecting the bulk hydrodynamics in the spreading viscous fluid film altogether. Here, we show that our recently developed model for thin liquid films in partial wetting, which properly incorporates the role of van der Waals interactions in a thin spreading fluid layer into a height-dependent surface tension, bridges the gap between these two approaches and leads to a unified framework for the description of wetting phenomena. We further use our model to investigate the instability and dewetting of nanometric liquid films, and show that it brings theoretical predictions closer to experimental observations.

Investigation of light induced effect on density of states of Pb doped CdSe thin films

NASA Astrophysics Data System (ADS)

Kaur, Jagdish; Singh, Baljinder; Tripathi, S. K.

2016-05-01

Thin films of Pb doped CdSe are deposited on the glass substrates by thermal evaporation technique using inert gas condensation method. The prepared thin films are light soaked under vacuum of 2×10-3 mbar for two hour. The absorption coefficient in the sub-band gap region has been studied using Constant Photocurrent Method (CPM). The absorption coefficient in the sub-band gap region follows an exponential Urbach tail. The value of Urbach energy and number density of defect states have been calculated from the absorption coefficient in the sub-band gap region and found to increase after light soaking treatment. The energy distribution of the occupied density of states below Fermi level has been evaluated using derivative procedure of the absorption coefficient.

Effect of thermal annealing on structure and optical band gap of amorphous Se{sub 72}Te{sub 25}Sb{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, D. K., E-mail: dwivedidkphys@rediffmail.com; Pathak, H. P., E-mail: dwivedidkphys@rediffmail.com; Shukla, Nitesh

2014-04-24

Thin films of a−Se{sub 72}Te{sub 25}Sb{sub 3} were prepared by vacuum evaporation technique in a base pressure of 10{sup −6} Torr on to well cleaned glass substrate. a−Se{sub 72}Te{sub 25}Sb{sub 3} thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical band gap of as prepared and annealed films as a function of photon energy in the wavelength range 400–1100 nm has been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.

Band gap grading and photovoltaic performance of solution-processed Cu(In,Ga)S2 thin-film solar cells.

PubMed

Sohn, So Hyeong; Han, Noh Soo; Park, Yong Jin; Park, Seung Min; An, Hee Sang; Kim, Dong-Wook; Min, Byoung Koun; Song, Jae Kyu

2014-12-28

The photophysical properties of CuInxGa1-xS2 (CIGS) thin films, prepared by solution-based coating methods, are investigated to understand the correlation between the optical properties of these films and the electrical characteristics of solar cells fabricated using these films. Photophysical properties, such as the depth-dependent band gap and carrier lifetime, turn out to be at play in determining the energy conversion efficiency of solar cells. A double grading of the band gap in CIGS films enhances solar cell efficiency, even when defect states disturb carrier collection by non-radiative decay. The combinational stacking of different density films leads to improved solar cell performance as well as efficient fabrication because a graded band gap and reduced shunt current increase carrier collection efficiency. The photodynamics of minority-carriers suggests that the suppression of defect states is a primary area of improvement in CIGS thin films prepared by solution-based methods.

A Thin Lens Model for Charged-Particle RF Accelerating Gaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allen, Christopher K.

Presented is a thin-lens model for an RF accelerating gap that considers general axial fields without energy dependence or other a priori assumptions. Both the cosine and sine transit time factors (i.e., Fourier transforms) are required plus two additional functions; the Hilbert transforms the transit-time factors. The combination yields a complex-valued Hamiltonian rotating in the complex plane with synchronous phase. Using Hamiltonians the phase and energy gains are computed independently in the pre-gap and post-gap regions then aligned using the asymptotic values of wave number. Derivations of these results are outlined, examples are shown, and simulations with the model aremore » presented.« less

Optical band gap of thermally deposited Ge-S-Ga thin films

NASA Astrophysics Data System (ADS)

Rana, Anjli; Heera, Pawan; Singh, Bhanu Pratap; Sharma, Raman

2018-05-01

Thin films of Ge20S80-xGax glassy alloy, obtained from melt quenching technique, were deposited on the glass substrate by thermal evaporation technique under a high vacuum conditions (˜ 10-5 Torr). Absorption spectrum fitting method (ASF) is employed to obtain the optical band gap from absorption spectra. This method requires only the measurement of the absorption spectrum of the sample. The width of the band tail was also determined. Optical band gap computed from absorption spectra is found to decrease with an increase in Ga content. The evaluated optical band gap (Eg) is in well agreement with the theoretically predicted Eg and obtained from transmission spectra.

Non-toxic novel route synthesis and characterization of nanocrystalline ZnS{sub x}Se{sub 1−x} thin films with tunable band gap characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agawane, G.L., E-mail: agawaneganesh@gmail.com; Shin, Seung Wook; Vanalakar, S.A.

2014-07-01

Highlights: • A simple, inexpensive, and non-toxic CBD route is used to deposit ZnS thin films. • The ZnS{sub x}Se{sub 1−x} thin films formation takes place via annealing of ZnS thin films in Se atmosphere. • S/(S + Se) ratio found to be temperature dependent and easy tuning of band gap has been done by Se atom deposition. - Abstract: An environmentally benign chemical bath deposition (CBD) route was employed to deposit zinc sulfide (ZnS) thin films. The CBD-ZnS thin films were further selenized in a furnace at various temperatures viz. 200, 300, 400, and 500 °C and the S/(Smore » + Se) ratio was found to be dependent on the annealing temperature. The effects of S/(S + Se) ratio on the structural, compositional and optical properties of the ZnS{sub x}Se{sub 1−x} (ZnSSe) thin films were investigated. EDS analysis showed that the S/(S + Se) ratio decreased from 0.8 to 0.6 when the film annealing temperature increased from 200 to 500 °C. The field emission scanning electron microscopy and atomic force microscopy studies showed that all the films were uniform, pin hole free, smooth, and adhered well to the glass substrate. The X-ray diffraction study on the ZnSSe thin films showed the formation of the cubic phase, except for the unannealed ZnSSe thin film, which showed an amorphous phase. The X-ray photoelectron spectroscopy revealed Zn-S, Zn-Se, and insignificant Zn-OH bonds formation from the Zn 2p{sub 3/2}, S 2p, Se 3d{sub 5/2}, and O 1s atomic states, respectively. The ultraviolet–visible spectroscopy study showed ∼80% transmittance in the visible region for all the ZnSSe thin films having various absorption edges. The tuning of the band gap energy of the ZnSSe thin films was carried out by selenizing CBD-ZnS thin films, and as the S/(S + Se) ratio decreased from 0.8 to 0.6, the band gap energy decreased from 3.20 to 3.12 eV.« less

[Short-term effects of low intensity thinning simulated by gap on ground microclimate and soil nutrients of pure spruce plantation].

PubMed

Wang, Cheng; Pang, Xue-Yong; Bao, Wei-Kai

2010-03-01

Taking a dense spruce pure plantation as test object and simulating the formation of natural forest gap, this paper studied the effects of low intensity thinning by gap creation on the ground temperature, ground humidity, and nutrient contents in different soil layers of the plantation. In the first year of gap creation, the mean diurnal temperature in the gap across the growth season (May - September) increased, while the mean diurnal humidity decreased. The soil organic matter (SOM) and NH4(+) -N contents in O-horizon (humus layer) increased by 19.62% and 283.85%, and the dissolved organic carbon (DOC) and NO3(-) -N contents decreased by 77.86% and 23.60%, respectively. The SOM, total nitrogen (TN), and NO3(-) -N contents in 0-10 cm soil layer increased by 45.77%, 37.14%, and 75.11%, and the NH4(+) -N, DOC, and total phosphorus (TP) contents decreased by 48.56%, 33.33%, and 13.11%, respectively. All the results suggested that low intensity thinning by gap creation could rapidly improve the ground microclimate of the plantation, and consequently, promote the soil microbial activity and mineralization processes in O-horizon, the release of soil nutrients, and the restoration of soil fertility.

DUST AND GAS IN THE DISK OF HL TAURI: SURFACE DENSITY, DUST SETTLING, AND DUST-TO-GAS RATIO

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pinte, C.; Ménard, F.; Dent, W. R. F.

The recent ALMA observations of the disk surrounding HL Tau reveal a very complex dust spatial distribution. We present a radiative transfer model accounting for the observed gaps and bright rings as well as radial changes of the emissivity index. We find that the dust density is depleted by at least a factor of 10 in the main gaps compared to the surrounding rings. Ring masses range from 10–100 M{sub ⊕} in dust, and we find that each of the deepest gaps is consistent with the removal of up to 40 M{sub ⊕} of dust. If this material has accumulatedmore » into rocky bodies, these would be close to the point of runaway gas accretion. Our model indicates that the outermost ring is depleted in millimeter grains compared to the central rings. This suggests faster grain growth in the central regions and/or radial migration of the larger grains. The morphology of the gaps observed by ALMA—well separated and showing a high degree of contrast with the bright rings over all azimuths—indicates that the millimeter dust disk is geometrically thin (scale height ≈1 AU at 100 AU) and that a large amount of settling of large grains has already occurred. Assuming a standard dust settling model, we find that the observations are consistent with a turbulent viscosity coefficient of a few 10{sup −4}. We estimate the gas/dust ratio in this thin layer to be of the order of 5 if the initial ratio is 100. The HCO{sup +} and CO emission is consistent with gas in Keplerian motion around a 1.7 M{sub ⊙} star at radii from ≤10–120 AU.« less

Cation/Anion Substitution in Cu2ZnSnS4 for Improved Photovoltaic Performance

PubMed Central

Ananthoju, Balakrishna; Mohapatra, Jeotikanta; Jangid, Manoj K.; Bahadur, D.; Medhekar, N. V.; Aslam, M.

2016-01-01

Cations and anions are replaced with Fe, Mn, and Se in CZTS in order to control the formations of the secondary phase, the band gap, and the micro structure of Cu2ZnSnS4. We demonstrate a simplified synthesis strategy for a range of quaternary chalcogenide nanoparticles such as Cu2ZnSnS4 (CZTS), Cu2FeSnS4 (CFTS), Cu2MnSnS4 (CMTS), Cu2ZnSnSe4 (CZTSe), and Cu2ZnSn(S0.5Se0.5)4 (CZTSSe) by thermolysis of metal chloride precursors using long chain amine molecules. It is observed that the crystal structure, band gap and micro structure of the CZTS thin films are affected by the substitution of anion/cations. Moreover, secondary phases are not observed and grain sizes are enhanced significantly with selenium doping (grain size ~1 μm). The earth-abundant Cu2MSnS4/Se4 (M = Zn, Mn and Fe) nanoparticles have band gaps in the range of 1.04–1.51 eV with high optical-absorption coefficients (~104 cm−1) in the visible region. The power conversion efficiency of a CZTS solar cell is enhanced significantly, from 0.4% to 7.4% with selenium doping, within an active area of 1.1 ± 0.1 cm2. The observed changes in the device performance parameters might be ascribed to the variation of optical band gap and microstructure of the thin films. The performance of the device is at par with sputtered fabricated films, at similar scales. PMID:27748406

Effect of visible light on the optical properties of a-(Ge2Sb2Te5)90Ag10 thin film

NASA Astrophysics Data System (ADS)

Singh, Palwinder; Thakur, Anup

2018-05-01

(Ge2Sb2Te5)90Ag10 (GST-Ag) bulk alloy was prepared using melt quenching technique. GST-Ag thin film was deposited on glass substrate using thermal evaporation method. The prepared thin films were exposed to visible light (intensity of 105 Lux for 2, 8, 20 and 30 hours) using 25W LED lamp. Transmission spectra were taken using UV-vis-NIR spectrophotometer in the wavelength range 800-3200 nm. Optical band gap of as-deposited and light exposed thin films was determined using Tauc's plot. Optical band gap was found to be decreasing on light exposure upto 8 hours and after that no significant change was observed.

Thickness dependence of optical properties of amorphous indium oxide thin films deposited by reactive evaporation

NASA Astrophysics Data System (ADS)

Uluta, K.; Deer, D.; Skarlatos, Y.

2006-08-01

The electrical conductivity and absorption coefficient of amorphous indium oxide thin films, thermally evaporated on glass substrates at room temperature, were evaluated. For direct transitions the variation of the optical band gap with thickness was determined and this variation was supposed to appear due to the variation of localized gap states, whereas the variation of conductivity with thickness was supposed to be due to the variation of carrier concentration. We attribute the variation of absorption coefficient with thickness to the variation of optical band gap energy rather than optical interference.

Environmentally sensitive theory of electronic and optical transitions in atomically thin semiconductors

NASA Astrophysics Data System (ADS)

Cho, Yeongsu; Berkelbach, Timothy C.

2018-01-01

We present an electrostatic theory of band-gap renormalization in atomically thin semiconductors that captures the strong sensitivity to the surrounding dielectric environment. In particular, our theory aims to correct known band gaps, such as that of the three-dimensional bulk crystal. Combining our quasiparticle band gaps with an effective-mass theory of excitons yields environmentally sensitive optical gaps as would be observed in absorption or photoluminescence. For an isolated monolayer of MoS2, the presented theory is in good agreement with ab initio results based on the G W approximation and the Bethe-Salpeter equation. We find that changes in the electronic band gap are almost exactly offset by changes in the exciton binding energy such that the energy of the first optical transition is nearly independent of the electrostatic environment, rationalizing experimental observations.

Numerical Optimization of a Bifacial Bi-Glass Thin-Film a-Si:H Solar Cell for Higher Conversion Efficiency

NASA Astrophysics Data System (ADS)

Berrian, Djaber; Fathi, Mohamed; Kechouane, Mohamed

2018-02-01

Bifacial solar cells that maximize the energy output per a square meter have become a new fashion in the field of photovoltaic cells. However, the application of thin-film material on bifacial solar cells, viz., thin-film amorphous hydrogenated silicon ( a- Si:H), is extremely rare. Therefore, this paper presents the optimization and influence of the band gap, thickness and doping on the performance of a glass/glass thin-film a- Si:H ( n- i- p) bifacial solar cell, using a computer-aided simulation tool, Automat for simulation of hetero-structures (AFORS-HET). It is worth mentioning that the thickness and the band gap of the i-layer are the key parameters in achieving higher efficiency and hence it has to be handled carefully during the fabrication process. Furthermore, an efficient thin-film a- Si:H bifacial solar cell requires thinner and heavily doped n and p emitter layers. On the other hand, the band gap of the p-layer showed a dramatic reduction of the efficiency at 2.3 eV. Moreover, a high bifaciality factor of more than 92% is attained, and top efficiency of 10.9% is revealed under p side illumination. These optimizations demonstrate significant enhancements of the recent experimental work on thin-film a- Si:H bifacial solar cells and would also be useful for future experimental investigations on an efficient a- Si:H thin-film bifacial solar cell.

Observation of shift in band gap with annealing in hydrothermally synthesized TiO2-thin films

NASA Astrophysics Data System (ADS)

Pawar, Vani; Jha, Pardeep K.; Singh, Prabhakar

2018-05-01

Anatase TiO2 thin films were synthesized by hydrothermal method. The films were fabricated on a glass substrate by spin coating unit and annealed at 500 °C for 2 hours in ambient atmosphere. The effect of annealing on microstructure and optical properties of TiO2 thin films namely, just deposited and annealed thin film were investigated. The XRD data confirms the tetragonal crystalline structure of the films with space group I41/amd. The surface morphology suggests that TiO2 particles are almost homogeneous in size and annealing of the film affect the grain growth of the particles. The band gap energy increases from 2.81 to 3.34 eV. On the basis of our observation, it can be concluded that the annealing of TiO2 thin films enhances the absorption range and it may find potential application in the field of solar cells.

Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

NASA Astrophysics Data System (ADS)

Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

2017-10-01

Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm-1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.

Synthesis and optical characterization of ternary chalcogenide Cu3BiS3 thin film by spin coating

NASA Astrophysics Data System (ADS)

Rawal, Neha; Hadi, Mohammed Kamal; Modi, B. P.

2017-05-01

In this work, ternary Chalcogenide Cu3BiS3(CBS) thin films have been prepared and modified by using spin coating technique. Lucratively, spin coating technique is easy going and simple though it hasn't given an enclosure and extensive focus of researches for Cu3BiS3 thin films formation. The surface smoothness and the homogeneity of the obtained thin films have been optimized throughout varying the annealing temperature, concentration and rotation speed. It had been found that as prepared films the value of the energy band gap is 1.4 eV, the absorption coefficient 105 cm-1. Each values of the EBG (Energy Band Gap) and AC (Absorption coefficient) was found in quite agreement with the published work of CBS thin film formation by other methods as CBD, dip coating etc. It signifies that Cu3BiS3 films can be used as an absorber layer for thin film solar cell.

Synthesis and characterization of cadmium sulphide thin films prepared by spin coating

NASA Astrophysics Data System (ADS)

Chodavadiya, Nisarg; Chapanari, Amisha; Zinzala, Jignesh; Ray, Jaymin; Pandya, Samir

2018-05-01

An II-VI group semiconductor is Wide band gap materials and has been widely studied due to their fundamental optical, structural, and electrical properties. Cadmium sulphide (CdS) is one of the most emerged materials in II-VI group. It has many applications such as buffer later in photovoltaic cell, multilayer light emitting diodes, optical filters, thin film field effect transistors, gas sensors, light detectors etc. It is fundamentally an n-type material with an optical band gap of 2.4 eV. Owing to these properties we had studied CdS thin films synthesis and characterized by Raman, Ultraviolet - Visible spectroscopy (UV-VIS) and Hot probe method. CdS thin films were prepared by spin coating of the Cadmium-thiourea precursor solution. Visual inspection after 20 minute thermolysis time the films were looks uniform and shiny pale yellow in color. Raman confirms the A1 vibration of pure CdS. UV-VIS gives the band gap about 2.52 eV, which confirms the formation of nanocrystalline form of CdS. Finally, hot probe signifies the n-type conductivity of the CdS film.

Thin-film topological insulators for continuously tunable terahertz absorption

NASA Astrophysics Data System (ADS)

West, D.; Zhang, S. B.

2018-02-01

One of the defining characteristics of a three-dimensional topological insulator (TI) is the appearance of a Dirac cone on its surface when it creates an interface with vacuum. For thin film TIs, however, the Dirac cones on opposite surfaces interact forming a small gap. For the case of three quintuple layers of Bi2Se3, we show that this gap can be continuously tuned between 128 meV and 0 meV with the application of modest perpendicular electric fields of less than 30 meV Å-1. Through both the Hamiltonian model and first-principles density functional theory calculations, we show that the inherent nonlinearity in realistic Dirac cone interaction leads to a gap which can be continuously tuned through the application of an external electric field. This tunability, coupled with the high optical absorption of thin film TIs, make this a very promising platform for terahertz and infrared detection.

Nonlinear microwave response of an MgB2 thin film

NASA Astrophysics Data System (ADS)

Purnell, A. J.; Cohen, L. F.; Zhai, H. Y.; Christen, H. M.; Paranthaman, M. P.; Lowndes, D. H.; Hao, Ling; Gallop, J. C.

2004-04-01

MgB2 is a two-gap superconductor and as a result may manifest unusual physical properties. The performance of MgB2 films at microwave frequencies has so far been rather poor compared to that of Nb alloys and this may result from intrinsic behaviour related to the double-gap structure or extrinsic properties due to non-optimized thin films. Here we give a detailed report on the microwave magnetic field dependent surface impedance of an MgB2 thin film, using a parallel plate resonator, as a function of temperature. We discuss whether the framework used to analyse nonlinear behaviour for other superconductors, both low and high Tc, but single-gap, has any validity for MgB2 and whether the films are limited by intrinsic or extrinsic behaviour. The key result is the observation of junction-type switching effects at high microwave power.

Vacancy defects and optoelectrical properties for fluorine tin oxide thin films with various SnF2 contents

NASA Astrophysics Data System (ADS)

Zhou, Yawei; Xu, Wenwu; Li, Jingjing; Yin, Chongshan; Liu, Yong; Zhao, Bin; Chen, Zhiquan; He, Chunqing; Mao, Wenfeng; Ito, Kenji

2018-01-01

Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates by e-beam evaporation. Much higher carrier concentration, broader optical band gap, and average transmittance over 80% were obtained with SnF2 doped SnO2 thin films. Positron annihilation results showed that there are two kinds of vacancy clusters with different sizes existing in the annealed FTO thin films, and the concentration of the larger vacancy clusters of VSnO in the thin films increases with increasing SnF2 contents. Meanwhile, photoluminescence spectra results indicated that the better electrical and optical properties of the FTO thin films are attributed to FO substitutions and oxygen vacancies with higher concentration, which are supported by positron annihilation Doppler broadening results and confirmed by X-ray photoelectron spectroscopy. The results showed that widening of the optical band gap of the FTO thin films strongly depends on the carrier concentration, which is interpreted for the Burstein-Moss effect and is associated with the formation of FO and oxygen vacancies with increasing SnF2 content.

Effect of thermal annealing on structure and optical band gap of Se{sub 66}Te{sub 25}In{sub 9} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh

2015-05-15

Thin films of a-Se{sub 66}Te{sub 25}In{sub 9} have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (E{sub g}) of a-Se{sub 66}Te{sub 25}In{sub 9} have been studied.

The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films

NASA Astrophysics Data System (ADS)

Rowtu, Srinu; Sangani, L. D. Varma; Krishna, M. Ghanashyam

2018-02-01

Resistive switching behavior by engineering the electrode work function and band gap of ZnTe thin films is demonstrated. The device structures Au/ZnTe/Au, Au/ZnTe/Ag, Al/ZnTe/Ag and Pt/ZnTe/Ag were fabricated. ZnTe was deposited by thermal evaporation and the stoichiometry and band gap were controlled by varying the source-substrate distance. Band gap could be varied between 1.0 eV to approximately 4.0 eV with the larger band gap being attributed to the partial oxidation of ZnTe. The transport characteristics reveal that the low-resistance state is ohmic in nature which makes a transition to Poole-Frenkel defect-mediated conductivity in the high-resistance states. The highest R off-to- R on ratio achieved is 109. Interestingly, depending on stoichiometry, both unipolar and bipolar switching can be realized.

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration.

PubMed

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-11-04

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses.

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

PubMed Central

Choi, Jun Young; Heo, Keun; Cho, Kyung-Sang; Hwang, Sung Woo; Kim, Sangsig; Lee, Sang Yeol

2016-01-01

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms can modify the band gap of SZTO thin films. Carrier generation originating from oxygen vacancies can modify the band-gap states of oxide films with the addition of Si. Since it is not easy to directly derive changes in the band gap states of amorphous oxide semiconductors, no reports of the relationship between the Fermi energy level of oxide semiconductor and the device stability of oxide thin film transistors (TFTs) have been presented. The addition of Si can reduce the total density of trap states and change the band-gap properties. When 0.5 wt% Si was used to fabricate SZTO TFTs, they showed superior stability under negative bias temperature stress. We derived the band gap and Fermi energy level directly using data from UPS, Kelvin probe, and high-resolution electron energy loss spectroscopy analyses. PMID:27812035

Band gap tuning of epitaxial SrTiO{sub 3-δ}/Si(001) thin films through strain engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cottier, Ryan J.; Steinle, Nathan A.; Currie, Daniel A.

2015-11-30

We investigate the effect of strain and oxygen vacancies (V{sub O}) on the crystal and optical properties of oxygen deficient, ultra-thin (4–30 nm) films of SrTiO{sub 3-δ} (STO) grown heteroepitaxially on p-Si(001) substrates by molecular beam epitaxy. We demonstrate that STO band gap tuning can be achieved through strain engineering and show that the energy shift of the direct energy gap transition of SrTiO{sub 3-δ}/Si films has a quantifiable dimensional and doping dependence that correlates well with the changes in crystal structure.

Fabrication and characteristics of thin disc piezoelectric transformers based on piezoelectric buzzers with gap circles.

PubMed

Chang, Kuo-Tsai; Lee, Chun-Wei

2008-04-01

This paper investigates design, fabrication and test of thin disc piezoelectric transformers (PTs) based on piezoelectric buzzers with gap circles at different diameters of the gap circles. The performance test is focused on characteristics of voltage gains, including maximum voltage gains and maximum-gain frequencies, for each piezoelectric transformer under different load conditions. Both a piezoelectric buzzer and a gap circle on a silver electrode of the buzzer are needed to build any type of the PTs. Here, the gap circle is used to form a ring-shaped input electrode and a circle-shaped output electrode for each piezoelectric transformer. To do so, both structure and connection of a PT are first expressed. Then, operating principle of a PT and its related vibration mode observed by a carbon-power imaging technique are described. Moreover, an experimental setup for characterizing each piezoelectric transformer is constructed. Finally, effects of diameters of the gap circles on characteristics of voltage gains at different load resistances are discussed.

Processing Solvent Dependent Morphology of Diketopyrrolopyrrole (DPP) based Low Band Gap Polymer and PCBM Blends

NASA Astrophysics Data System (ADS)

Ferdous, Sunzida; Liu, Feng; Russell, Thomas

2013-03-01

Solution processing of polymer semiconductors is widely used for fabrication of low cost organic solar cells. Recently, mixed solvent systems or additive based systems for fabricating polymer solar cells have proven to be beneficial for obtaining high performance devices with multi-length scale morphologies. To control the morphology during the processing step, one needs to understand the effect of solvent as it evaporates to form the final thin film structure. In this study, we used diketopyrrolopyrrole (DPP) based low band gap polymer and phenyl-C71-butyric acid methyl ester (PCBM) blend in a series of mixed solvent systems consisting of a good solvent for both of the active material components, as well as different solvents that are good solvents for PCBM, but poor solvents for the polymer. Different evaporation times of the poor solvents during the drying process, and different solubility of the polymer in these poor solvents as well as their interaction with the substrate play an important role in the final morphology. In-situ GIWAXS studies were performed to observe the evolution of the structure as the solvent evaporates. The final morphologies of the thin film devices were also characterized by AFM, TEM, and various x-ray scattering techniques to correlate the morphology with the obtained device performances.

Topological phases of topological-insulator thin films

NASA Astrophysics Data System (ADS)

Asmar, Mahmoud M.; Sheehy, Daniel E.; Vekhter, Ilya

2018-02-01

We study the properties of a thin film of topological insulator material. We treat the coupling between helical states at opposite surfaces of the film in the properly-adapted tunneling approximation, and show that the tunneling matrix element oscillates as a function of both the film thickness and the momentum in the plane of the film for Bi2Se3 and Bi2Te3 . As a result, while the magnitude of the matrix element at the center of the surface Brillouin zone gives the gap in the energy spectrum, the sign of the matrix element uniquely determines the topological properties of the film, as demonstrated by explicitly computing the pseudospin textures and the Chern number. We find a sequence of transitions between topological and nontopological phases, separated by semimetallic states, as the film thickness varies. In the topological phase, the edge states of the film always exist but only carry a spin current if the edge potentials break particle-hole symmetry. The edge states decay very slowly away from the boundary in Bi2Se3 , making Bi2Te3 , where this scale is shorter, a more promising candidate for the observation of these states. Our results hold for free-standing films as well as heterostructures with large-gap insulators.

Enhancement of nonlinear optical susceptibility of CuPc films by ITO layer

NASA Astrophysics Data System (ADS)

Ganesh, V.; Zahran, H. Y.; Yahia, I. S.; Shkir, Mohd; AlFaify, S.

2016-12-01

In the present study, the Copper Phthalocyanine (CuPc)/ITO thin film was fabricated using thermal evaporation method. The structural property was analyzed by X-ray diffraction study and confirms that the thin film has been preferentially grown along (200) plane. The atomic force microscope study was carried out on deposited film and quality of thin films is assessed by calculating the roughness of the films. The direct and indirect band gap, linear and nonlinear optical characteristics of grown films were calculated by using UV-Vis-NIR spectrometer studies. The calculated values of the first direct and indirect band gaps (Eg1(d) &Eg1(ind)) are 1.879 and 1.644 eV as a fundamental gap, while the values of second direct and indirect band gap (Eg2(d) &Eg2(ind)) are 1.660 and 1.498 eV as an onset gap for CuPc. The values of nonlinear refractive index (n2) and third order nonlinear optical susceptibility (χ3) are found to be 5 × 10-8 and 8 × 10-9 (theoretical) and 5.2 × 10-8 and 1.56 × 10-7 (experimental) respectively. The optical band and third order nonlinear properties suggest that the as-prepared films are may be applied in optoelectronic and nonlinear applications.

Systematic analysis of the unique band gap modulation of mixed halide perovskites.

PubMed

Kim, Jongseob; Lee, Sung-Hoon; Chung, Choong-Heui; Hong, Ki-Ha

2016-02-14

Solar cells based on organic-inorganic hybrid metal halide perovskites have been proven to be one of the most promising candidates for the next generation thin film photovoltaic cells. Mixing Br or Cl into I-based perovskites has been frequently tried to enhance the cell efficiency and stability. One of the advantages of mixed halides is the modulation of band gap by controlling the composition of the incorporated halides. However, the reported band gap transition behavior has not been resolved yet. Here a theoretical model is presented to understand the electronic structure variation of metal mixed-halide perovskites through hybrid density functional theory. Comparative calculations in this work suggest that the band gap correction including spin-orbit interaction is essential to describe the band gap changes of mixed halides. In our model, both the lattice variation and the orbital interactions between metal and halides play key roles to determine band gap changes and band alignments of mixed halides. It is also presented that the band gap of mixed halide thin films can be significantly affected by the distribution of halide composition.

Synthesis of colloidal Zn(Te,Se) alloy quantum dots

NASA Astrophysics Data System (ADS)

Asano, H.; Arai, K.; Kita, M.; Omata, T.

2017-10-01

Colloidal Zn(Te1-x Se x ) quantum dots (QDs), which are highly mismatched semiconductor alloys, were synthesized by the hot injection of an organometallic solution, and the composition and size dependence of their optical gap were studied together with the theoretical calculation using the finite-depth-well effective mass approximation. The optical gaps exhibited considerable negative deviation from the mole fraction weighted mean optical gaps of ZnTe and ZnSe, i.e. a large optical gap bowing was observed, similar to the bulk and thin-film alloys. The composition and size dependence of optical gaps agreed well with theoretically calculated ones employing a bowing parameter similar to that of the bulk alloys; therefore, the extent of the optical gap bowing in these alloy QDs is concluded to be the same as that in bulk and thin-film alloys. The optical gaps of Zn(Te1-x Se x ) QDs with diameters of 3.5-5 nm, where x ~ 0.35, were close to the energy corresponding to green light, indicating that those QDs are very promising as green QD-phosphors.

An ultrastructural analysis of the epithelial-fiber interface (EFI) in primate lenses.

PubMed

Kuszak, J R; Novak, L A; Brown, H G

1995-11-01

The purpose of this study was to conduct a comprehensive ultrastructural analysis of the epithelial-fiber interface (EFI) in normal adult primate (Macaque nemestrina and fascicularis; 6-9 years old, n = 10) lenses. Scanning electron microscopy (SEM) was used to initially characterize the gross size, shape and three-dimensional organization of central zone (cz) epithelial cells and the anterior ends of elongating fibers beneath these cells. This fiducial information was essential to properly orient lens pieces in freeze fracture specimen carriers for the production of replicas with unambiguously identifiable EFI. Transmission electron microscopy (TEM) of replicas and thin-sectioned material were used to ultrastructurally analyse the cz EFI. TEM thin-sectioned material was also used to ultrastructurally analyse the pregerminative (pgz), germinative (gz) and transitional zone (tz) EFI. Correlative SEM and TEM of cz EFI components revealed that the apical membrane of both epithelial and elongating fiber cells were irregularly polygonal in shape, and aligned in parallel as smooth, concave-convex surfaces. However, whereas epithelial cell apical surfaces had minimal size variation, elongating fibers were larger and considerably variable in size. Quantitative analysis of > 10000 micron2 cz elongating fiber apical surfaces failed to detect any gap junctions defined in freeze fracture replicas as complementary aggregates of transmembrane proteins (connexons) conjoined across a narrowed extracellular space. However, a comparable frequency of vesicular events was noted in this region as quantified previously in adult and embryonic chick lens. Correlative TEM analysis > 1500 linear micrometers of thin-sectioned EFI from this region confirmed the presence of epithelial-epithelial gap junctions, elongating fiber-elongating fiber gap junctions, and an extreme paucity of epithelial-elongating fiber gap junctions. In contrast, TEM analysis of > 1000 linear micrometers of thin-sectioned pgz, gz and tz EFI, confirmed the presence of epithelial-epithelial gap junctions, elongating fiber-elongating fiber gap junctions, numerous epithelial-elongating fiber adherens junctions and a few epithelial-elongating fiber gap junctions. Thus, the results of this and previous quantitative morphological and physiological studies (electronic and dye coupling) demonstrate that there is limited coupling between cz epithelial cells and underlying elongating fibers. Furthermore, the absence of gap junctional plaques in cz EFI freeze-fracture replicas and either pentalaminar or septalaminar profiles in correlative thin-sections, suggests that this limited coupling could be mediated via isolated gap junction channels. However, the results of this and previous quantitative studies further show that a greater degree of coupling exists across the pgz, gz and tz regions of the EFI and that this coupling is likely to be mediated by gap junction plaques. Finally, this and other studies continue to demonstrate that transcytotic processes play a role in lens physiology at the EFI.

Band gap modulation in magnetically doped low-defect thin films of (Bi1-xSbx)2 Te3 with minimized bulk carrier concentration

NASA Astrophysics Data System (ADS)

Maximenko, Yulia; Scipioni, Kane; Wang, Zhenyu; Katmis, Ferhat; Steiner, Charles; Weis, Adam; van Harlingen, Dale; Madhavan, Vidya

Topological insulators Bi2Te3 and Sb2Te3 are promising materials for electronics, but both are naturally prone to vacancies and anti-site defects that move the Fermi energy onto the bulk bands. Fabricating (Bi1-xSbx)2 Te3 (BST) with the tuned x minimizes point defects and unmasks topological surface states by reducing bulk carriers. BST thin films have shown topological surface states and quantum anomalous Hall effect. However, different studies reported variable Sb:Bi ratios used to grow an undoped BST film. Here, we develop a reliable way to grow defect-free subnanometer-flat BST thin films having the Fermi energy tuned to the Dirac point. High-resolution scanning tunneling microscopy (STM) and Landau level spectroscopy prove the importance of crystallinity and surface roughness-not only Sb:Bi ratio-for the final bulk carrier concentration. The BST thin films were doped with Cr and studied with STM with atomic resolution. Counterintuitively, Cr density is anticorrelated with the local band gap due to Cr's antiferromagnetic order. We analyze the correlations and report the relevant band gap values. Predictably, high external magnetic field compromises antiferromagnetic order, and the local band gap increases. US DOE DE-SC0014335; Moore Found. GBMF4860; F. Seitz MRL.

Relation between the /ital T//sub /ital c// degradation and the correlation gap in disordered superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belitz, D.

1989-07-01

It is shown theoretically that for both bulk and thin-film superconductorsthe dominant contributions to the disorder-induced degradation of/ital T//sub /ital c// can be expressed in terms of the disorder-induced suppression/delta//ital N/ of the normal-state electronic density of states. This explains thecorrelation found experimentally between /ital T//sub /ital c// and /delta//ital N/, and iteliminates the resistivity scale as an adjustable parameter for comparisonbetween theory and experiment. Agreement with recent experimental results on Pbis very good. We also discuss the disorder dependence of the superconductinggap.

Nonlinear optical parameters of nanocrystalline AZO thin film measured at different substrate temperatures

NASA Astrophysics Data System (ADS)

Jilani, Asim; Abdel-wahab, M. Sh; Al-ghamdi, Attieh A.; Dahlan, Ammar sadik; Yahia, I. S.

2016-01-01

The 2.2 wt% of aluminum (Al)-doped zinc oxide (AZO) transparent and preferential c-axis oriented thin films were prepared by using radio frequency (DC/RF) magnetron sputtering at different substrate temperature ranging from room temperature to 200 °C. For structural analysis, X-ray Diffraction (XRD) and Atomic Force Electron Microscope (AFM) was used for morphological studies. The optical parameters such as, optical energy gap, refractive index, extinction coefficient, dielectric loss, tangent loss, first and third order nonlinear optical properties of transparent films were investigated. High transmittance above 90% and highly homogeneous surface were observed in all samples. The substrate temperature plays an important role to get the best transparent conductive oxide thin films. The substrate temperature at 150 °C showed the growth of highly transparent AZO thin film. Energy gap increased with the increased in substrate temperature of Al doped thin films. Dielectric constant and loss were found to be photon energy dependent with substrate temperature. The change in substrate temperature of Al doped thin films also affect the non-liner optical properties of thin films. The value of χ(3) was found to be changed with the grain size of the thin films that directly affected by the substrate temperature of the pure and Al doped ZnO thin films.

Interoperability of Landsat and DMC imagery for continuous detection and quantification of nonindustrial forest harvests in the Western Upper Peninsula of Michigan, USA

NASA Astrophysics Data System (ADS)

Mayer, A. L.; Tortini, R.; Maianti, P.

2013-12-01

The relationship between human land use and land cover change is critical to sustainable forest management. Land use decisions by small land managers aggregate into substantial land cover changes at landscape and regional scales. Land ownership across large portions of the Upper Great Lakes region is in considerable flux, as large timber industry tracts are split into many smaller non-industrial ownerships, and new owners prioritize amenity and non-timber forest values. Nonindustrial Private Forest (NIPF) owners also transfer their properties to younger generations or other NIPF owners with different management approaches and goals. Survey data on intended harvests and sales are available through the National Woodland Owner Survey (NWOS), run by the USDA Forest Service. However, the disparity between NIPF owner-stated plans to harvest, and what actually occurs, can be substantially different, especially if annual fluctuations in timber prices or general economic fluctuations cause NIPF owners to deviate from their stated management and ownership intentions. This reduces the NWOS' utility. Remote sensing data have considerable value for identifying small scale harvests and, paired with ownership data at the parcel scale, can measure NIPF harvest rates as related to ownership change at a regional scale. Here we focus on the Western Upper Peninsula of Michigan (WUP) and the most recent decade to develop our methodology, using primarily Landsat images from 2003-2013. However, Landsat data series are characterized by gaps in coverage over long temporal and large spatial scales, and so a methodology to combine multiple remote sensing data sources is necessary for regional-scale land use/land cover change research. We filled these gaps by integrating the available Landsat time series with DMC imagery. We then combined these data with GIS overlays of the parcels and stand-level data on removed basal area (BA) during known harvesting events to develop a classification of harvest intensity for the WUP. Images taken during peak growing season were preferred to calculate NDVI and ΔNDVI, and in general for enhancing possible spectral changes. We classified the harvests as clear cut, selective harvesting or thinning using an object-based image analysis. In particular, we defined a clear cut a harvesting event in which ~90-100% BA is removed, commercial harvesting if ~50-80% BA is removed and thinning if ~20-40% BA removal. This work demonstrates that DMC images can effectively fill the Landsat data gap for the detection and quantification of harvesting events. Preliminary results show that the method is capable of identifying harvests down to ~20% BA removal. These results can then be used to monitor the accuracy of the NWOS, and to develop a probability estimate of harvest given either ownership change or changes in market conditions.

Three dimensional metafilms with dual channel unit cells

DOE PAGES

Burckel, D. Bruce; Campione, Salvatore; Davids, Paul S.; ...

2017-04-04

Three-dimensional (3D) metafilms composed of periodic arrays of silicon unit cells containing single and multiple micrometer-scale vertical split ring resonators (SRRs) per unit cell were fabricated. In contrast to planar and stacked planar structures, these 3D metafilms have a thickness t ~λ d/4, allowing for classical thin film effects in the long wavelength limit. The infrared specular far-field scattering response was measured for metafilms containing one and two resonators per unit cell and compared to numerical simulations. Excellent agreement in the frequency region below the onset of diffractive scattering was obtained. For dense arrays of unit cells containing single SRRs,more » normally incident linearly polarized plane waves which do not excite a resonant response result in thin film interference fringes in the reflected spectra and are virtually indistinguishable from the scattering response of an undecorated array of unit cells. For the resonant linear polarization, the specular reflection for arrays is highly dependent on the SRR orientation on the vertical face for gap-up, gap-down, and gap-right orientations. For dense arrays of unit cells containing two SRRs per unit cell positioned on adjacent faces, the specular reflection spectra are slightly modified due to near-field coupling between the orthogonally oriented SRRs but otherwise exhibit reflection spectra largely representative of the corresponding single-SRR unit cell structures. Lastly, the ability to pack the unit cell with multiple inclusions which can be independently excited by choice of incident polarization suggests the construction of dual-channel films where the scattering response is selected by altering the incident polarization.« less

Electron-hole pairing of Fermi-arc surface states in a Weyl semimetal bilayer

NASA Astrophysics Data System (ADS)

Michetti, Paolo; Timm, Carsten

2017-03-01

The topological nature of Weyl semimetals (WSMs) is corroborated by the presence of chiral surface states, which connect the projections of the bulk Weyl points by Fermi arcs (FAs). We study a bilayer structure realized by introducing a thin insulating spacer into a bulk WSM. Employing a self-consistent mean-field description of the interlayer Coulomb interaction, we propose that this system can develop an interlayer electron-hole pair condensate. The formation of this excitonic condensate leads to partial gapping of the FA dispersion. We obtain the dependence of the energy gap and the critical temperature on the model parameters, finding, in particular, a linear scaling of these quantities with the separation between the Weyl points in momentum space. A detrimental role is played by the curvature of the FAs, although the pairing persists for moderately small curvature. A signature of the condensate is the modification of the quantum oscillations involving the surface FAs.

Structural, electrical, optical and magnetic properties of NiO/ZnO thin films

NASA Astrophysics Data System (ADS)

Sushmitha, V.; Maragatham, V.; Raj, P. Deepak; Sridharan, M.

2018-02-01

Nickel oxide/Zinc oxide (NiO/ZnO) thin films have been deposited onto thoroughly cleaned glass substrates by reactive direct current (DC) magnetron sputtering technique and subsequently annealed at 300 °C for 3 h in vacuum. The NiO/ZnO thin films were then studied for their structural, optical and electrical properties. X-ray diffraction (XRD) pattern of ZnO and NiO showed the diffraction planes corresponding to hexagonal and cubic phase respectively. The optical properties showed that with the increase in the deposition time of NiO the energy band gap varied between 3.1 to 3.24 eV. Hence, by changing the deposition time of NiO the tuning of band gap and conductivity were achieved. The magnetic studies revealed the diamagnetic nature of the NiO/ZnO thin films.

Enhanced optical band-gap of ZnO thin films by sol-gel technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.

2016-05-06

Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The resultsmore » of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.« less

Barium strontium titanate thin film growth with variation of lanthanum dopant compatibility as sensor prototype in the satellite technology

NASA Astrophysics Data System (ADS)

Mulyadi; Wahyuni, Rika; Hardhienata, Hendradi; Irzaman

2018-05-01

Electrical properties of barium strontium titanate thin films were investigated. Three layers of barium strontium titanate thin films have been prepared by chemical solution deposition method and spin coating technique at 8000 rpm rotational speed for 30 seconds and temperature of annealing at 850°C for eight hours with temperature increment of 1.67°C/minute. Materials produced by the process of lanthanum dopant with doping variations of 2%, 4% and 6% above type-p silicon (100) substrates. Film obtained was then carried out the characterization using USB 2000 VIS-NIR and tauc plot method. As a result, the barium strontium titanate thin film has the value of band gap energy of 1.58 eV, 1.92 eV and 2.24 eV respectively. The characterization of electrical properties shows that the band gap value of barium strontium titanate thin film with lanthanum dopant was in the range of semiconductor value. Barium strontium titanate thin films with lanthanum dopant are sensitive to temperature changes, so it potentially to be applied to temperature monitoring on satellite technology.

Spontaneous nano-gap formation in Ag film using NaCl sacrificial layer for Raman enhancement

NASA Astrophysics Data System (ADS)

Min, Kyungchan; Jeon, Wook Jin; Kim, Youngho; Choi, Jae-Young; Yu, Hak Ki

2018-03-01

We report the method of fabrication of nano-gaps (known as hot spots) in Ag thin film using a sodium chloride (NaCl) sacrificial layer for Raman enhancement. The Ag thin film (20-50 nm) on the NaCl sacrificial layer undergoes an interfacial reaction due to the AgCl formed at the interface during water molecule intercalation. The intercalated water molecules can dissolve the NaCl molecules at interfaces and form the ionic state of Na+ and Cl-, promoting the AgCl formation. The Ag atoms can migrate by the driving force of this interfacial reaction, resulting in the formation of nano-size gaps in the film. The surface-enhanced Raman scattering activity of Ag films with nano-size gaps has been investigated using Raman reporter molecules, Rhodamine 6G (R6G).

Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

NASA Astrophysics Data System (ADS)

Yilbas, B. S.; Ali, H.

2016-08-01

Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields

NASA Astrophysics Data System (ADS)

Kaiju, H.; Kasa, H.; Komine, T.; Mori, S.; Misawa, T.; Abe, T.; Nishii, J.

2015-05-01

We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96-1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. From these experimental and calculation results, it can be concluded that SQC devices with a Co thickness of 10-20 nm can be expected to function as spin-filter devices.

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

DOEpatents

Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

2006-07-25

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al₂O₃ substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

A Rapid Method for Deposition of Sn-Doped GaN Thin Films on Glass and Polyethylene Terephthalate Substrates

NASA Astrophysics Data System (ADS)

Pat, Suat; Özen, Soner; Korkmaz, Şadan

2018-01-01

We report the influence of Sn doping on microstructure, surface, and optical properties of GaN thin films deposited on glass and polyethylene terephthalate (PET) substrate. Sn-doped GaN thin films have been deposited by thermionic vacuum arc (TVA) at low temperature. TVA is a rapid deposition technology for thin film growth. Surface and optical properties of the thin films were presented. Grain size, height distribution, roughness values were determined. Grain sizes were calculated as 20 nm and 13 nm for glass and PET substrates, respectively. Nano crystalline forms were shown by field emission scanning electron microscopy. Optical band gap values were determined by optical methods and photoluminescence measurement. The optical band gap values of Sn doped GaN on glass and PET were determined to be approximately ˜3.40 eV and ˜3.47 eV, respectively. As a result, TVA is a rapid and low temperature deposition technology for the Sn doped GaN deposited on glass and PET substrate.

Structural and Optical Properties of Cd 1- x Se x Thin Films Deposited by Electron Beam Evaporation Technique

NASA Astrophysics Data System (ADS)

Tripathi, Ravishankar Nath; Verma, Aneet Kumar; Rahul, Vishwakarma, S. R.

2011-10-01

Cadmium selenide (CdSe) thin films deposited by means of electron beam evaporation technique under high vacuum ˜10 -5 torr on ultrasonically cleaned glass substrate. Using stating materials of various compositions of cadmium and selenium using formula Cd 1- x Se x where x is orbitory constant having value 0.20≤ x ≤0.40 here we take less value of x for the creation of anion vacancy in thin films. In present work the structural properties have been studies using XRD technique and found that starting materials and thin films both are polycrystalline in nature having hexagonal structure. Here we study the effect of composition ratio Cd/Se in starting material and its prepared thin films on its grain size and lattice parameter. From the analysis of X-Ray diffractogram found that lattice parameter and grain size both are decreases with increasing Cd/Se ratio in thin films as well as in starting material the preferred orientation in thin films along (100) plane. The surface morphology was studied using SEM characterization and found that films are smooth and homogeneous. The films have been analysed for optical band gap and absorbed a direct band gap.

Optical pump terahertz probe studies of semiconducting polymers

NASA Astrophysics Data System (ADS)

Cunningham, Paul D.

Optical-pump terahertz-probe spectroscopy (OPTP) has been applied to study charge generation, transport and the evolution of the photo-induced excited states in thin film organic semiconductors, with emphasis on their relevance to photovoltaic technology. In these experiments the response of the photoexcited material to the AC electric field of a terahertz (THz) pulse was measured. From this response, the evolution of the complex conductivity in the far-infrared was monitored. OPTP presents advantages over other techniques by being an all-optical probe of the complex conductivity over nanometer scale distances with sub-picosecond resolution and exhibits particular sensitivity to carrier scattering rates, which typically lay in the THz range. Conductivity models were applied to the extracted conductivity curves in order to determine technologically relevant quantities like the charge carrier mobility and external quantum yield of charge carrier generation. We observed charge carriers generated on a subpicosecond time scale in thin films of polyhexylthiophene (P3HT). Through application of the Drude-Smith model (DSM) over the 0-2 THz band, we determined a room temperature intrinsic mobility of about 30 cm2/Vs. The temperature dependence of the conductivity dynamics showed signs of thermally activated polaron hopping influenced by torsional disorder. Both above and below gap excitation resulted in similar dynamics, showing that the majority of carriers recombine within 1 ps. We were able to observe charge transfer occurring on a sub-ps timescale to the soluble fullerene, PCBM, for both excited states, demonstrating that narrow gap polymers can be blended with PCBM for photovoltaic applications. We observed charge carrier generated on a sub-ps time scale in thin amorphous films of metalated polymers. The time evolution of the conductivity showed that charge carriers recombine and only excitons persist after 100 ps. This characteristic appears to be common to amorphous systems. An intrinsic mobility of 20 cm2/Vs was found for the most promising material. Broadband (0-6 THz) studies of the photoconductivity in P3HT suggest that the hole mobility is lower than initially determined. They also bring into question whether the DSM can describe the conductivity effectively or whether delocalized polaron transitions at higher frequencies are the origin of the observed features.

Effect of Thermal Annealing on the Band GAP and Optical Properties of Chemical Bath Deposited ZnSe Thin Films

NASA Astrophysics Data System (ADS)

Ezema, F. I.; Ekwealor, A. B. C.; Osuji, R. U.

2006-05-01

Zinc selenide (ZnSe) thin films were deposited on glass substrate using the chemical bath deposition method at room temperature from aqueous solutions of zinc sulphate and sodium selenosulfate in which sodium hydroxide was employed as complexing agents. The `as-deposited' ZnSe thin films are red in color and annealed in oven at 473 K for 1 hour and on a hot plate in open air at 333 K for 5 minutes, affecting the morphological and optical properties. Optical properties such as absorption coefficient a and extinction coefficient k, were determined using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-1000 nm. The films have transmittance in VIS-NIR regions that range between 26 and 87%. From absorbance and transmittance spectra, the band gap energy determined ranged between 1.60 eV and 1.75 for the `as deposited' samples, and the annealed samples exhibited a band gap shift of 0.15 eV. The high transmittance of the films together with its large band gap made them good materials for selective coatings for solar cells.

SU-E-T-163: Thin-Film Organic Photocell (OPV) Properties in MV and KV Beams for Dosimetry Applications.

PubMed

Ng, S K; Hesser, J; Zhang, H; Gowrisanker, S; Yakushevich, S; Shulhevich, Y; Abkai, C; Wack, L; Zygmanski, P

2012-06-01

To characterize dosimetric properties of low-cost thin film organic-based photovoltaic (OPV) cells to kV and MV x-ray beams for their usage as large area dosimeter for QA and patient safety monitoring device. A series of thin film OPV cells of various areas and thicknesses were irradiated with MV beams to evaluate the stability and reproducibility of their response, linearity and sensitivity to absorbed dose. The OPV response to x-rays of various linac energies were also characterized. Furthermore the practical (clinical) sensitivity of the cells was determined using IMRT sweeping gap test generated with various gap sizes. To evaluate their potential usage in the development of low cost kV imaging device, the OPV cells were irradiated with kV beam (60-120 kVp) from a fluoroscopy unit. Photocell response to the absorbed dose was characterized as a function of the organic thin film thickness and size, beam energy and exposure for kV beams as well. In addition, photocell response was determined with and without thin plastic scintillator. Response of the OPV cells to the absorbed dose from kV and MV beams are stable and reproducible. The photocell response was linearly proportional to the size and about slightly decreasing with the thickness of the organic thin film, which agrees with the general performance of the photocells in visible light. The photocell response increases as a linear function of absorbed dose and x-ray energy. The sweeping gap tests performed showed that OPV cells have sufficient practical sensitivity to measured MV x-ray delivery with gap size as small as 1 mm. With proper calibration, the OPV cells could be used for online radiation dose measurement for quality assurance and patient safety purposes. Their response to kV beam show promising potential in development of low cost kV radiation detection devices. © 2012 American Association of Physicists in Medicine.

Effects of bacteria on CdS thin films used in technological devices

NASA Astrophysics Data System (ADS)

Alpdoğan, S.; Adıgüzel, A. O.; Sahan, B.; Tunçer, M.; Metin Gubur, H.

2017-04-01

Cadmium sulfide (CdS) thin films were fabricated on glass substrates by the chemical bath deposition method at 70 {}^\\circ \\text{C} considering deposition times ranging from 2 h to 5 h. The optical band gaps of CdS thin films were found to be in the 2.42-2.37 eV range. CdS thin films had uniform spherical nano-size grains which had polycrystalline, hexagonal and cubic phases. The films had a characteristic electrical resistivity of the order of {{10}5} Ω \\text{cm} and n-type conductivity at room condition. CdS thin films were incubated in cultures of B.domonas aeruginosa and Staphylococcus aureus, which exist abundantly in the environment, and form biofilms. SEM images showed that S. aureus and K. pneumonia were detected significantly on the film surfaces with a few of P. aeruginosa and B. subtilis cells attached. CdS thin film surface exhibits relatively good resistance to the colonization of P. aeruginosa and B. subtilis. Optical results showed that the band gap of CdS thin films which interacted with the bacteria is 2.42 \\text{eV} . The crystal structure and electrical properties of CdS thin films were not affected by bacterial adhesion. The antimicrobial effect of CdS nanoparticles was different for different bacterial strains.

Surfactant mediated synthesis of bismuth selenide thin films for photoelectrochemical solar cell applications.

PubMed

Desai, Neha D; Khot, Kishorkumar V; Ghanwat, Vishvanath B; Kharade, Suvarta D; Bhosale, Popatrao N

2018-03-15

In the present report, nanostructured bismuth selenide (Bi 2 Se 3 ) thin films have been successfully deposited by using arrested precipitation technique (APT) at room temperature. The effect of three different surfactants on the optostructural, morphological, compositional and photoelectrochemical properties of Bi 2 Se 3 thin films were investigated. Optical absorption data indicates direct and allowed transition with a band gap energy varied from 1.4 eV to 1.8 eV. The X-ray diffraction pattern (XRD) revealed that Bi 2 Se 3 thin films are crystalline in nature and confirmed rhombohedral crystal structure. SEM micrographs shows morphological transition from interconnected mesh to nanospheres like and finally granular morphology. Surface topography of Bi 2 Se 3 thin films was determined by AFM. Compositional analysis of all samples was carried out by energy dispersive X-ray spectroscopy (EDS). Finally, all Bi 2 Se 3 thin films shows good PEC performance with highest photoconversion efficiency 1.47%. In order to study the stability of Bi 2 Se 3 thin films four cycles are repeated after gap of one week each. Further PEC performance of all Bi 2 Se 3 thin films are also supported by electrochemical impedance (EIS) measurement study. Copyright © 2017 Elsevier Inc. All rights reserved.

Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

NASA Astrophysics Data System (ADS)

Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

2016-07-01

Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

Scrutinizing the double superconducting gaps and strong coupling pairing in (Li1−xFex)OHFeSe

PubMed Central

Du, Zengyi; Yang, Xiong; Lin, Hai; Fang, Delong; Du, Guan; Xing, Jie; Yang, Huan; Zhu, Xiyu; Wen, Hai-Hu

2016-01-01

In the field of iron-based superconductors, one of the frontier studies is about the pairing mechanism. The recently discovered (Li1−xFex)OHFeSe superconductor with the transition temperature of about 40 K provides a good platform to check the origin of double superconducting gaps and high transition temperature in the monolayer FeSe thin film. Here we report a scanning tunnelling spectroscopy study on the (Li1−xFex)OHFeSe single crystals. The tunnelling spectrum mimics that of the monolayer FeSe thin film and shows double gaps at about 14.3 and 8.6 meV. Further analysis based on the quasiparticle interference allows us to rule out the d-wave gap, and for the first time assign the larger (smaller) gap to the outer (inner) Fermi pockets (after folding) associating with the dxy (dxz/dyz) orbitals, respectively. The gap ratio amounts to 8.7, which demonstrates the strong coupling mechanism in the present superconducting system. PMID:26822281

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Sha, Yi-Gao

1995-01-01

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Thickness dependent band gap of Bi{sub 2-x}Sb{sub x}Te{sub 3} (x = 0, 0.05, 0.1) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, M. M.; Soni, P. H., E-mail: phsoni-msu@yahoo.com; Desai, C. F.

2016-05-23

Thin films of Bi{sub 2}Te{sub 3}(Sb) were prepared on alkali halide crystal substrates. Sb content and the film thickness were varied. Bi{sub 2}Te{sub 3} is a narrow gap semiconductor. Bi-Sb is a continuous solid solution of substitutional type and Sb therefore was used to test its effect on the band gap. The film thickness variation was also taken up. The infra-red absorption spectra were used in the wave number range 400 cm{sup −1} to 4000 cm{sup −1}. The band gap obtained from the absorption data was found to increase with decreasing thickness since the thickness range used was from 30more » nm to 170 nm. This is a range corresponding to nanostructures and hence quantum size effect was observed as expected. The band gap also exhibited Sb content dependence. The detail results are have been reported and explained.« less

Characterization of aluminum selenide bi-layer thin film

NASA Astrophysics Data System (ADS)

Boolchandani, Sarita; Soni, Gyanesh; Srivastava, Subodh; Vijay, Y. K.

2018-05-01

The Aluminum Selenide (AlSe) bi-layer thin films were grown on glass substrate using thermal evaporation method under high vacuum condition. The morphological characterization was done using SEM. Electrical measurement with temperature variation shows that thin films exhibit the semiconductor nature. The optical properties of prepared thin films have also been characterized by UV-VIS spectroscopy measurements. The band gap of composite thin films has been calculated by Tauc's relation at different temperature ranging 35°C-100°C.

Optimization of effective absorption enhancement of paired-strips gold nanoantennas arrays in organic thin-films

NASA Astrophysics Data System (ADS)

Yang, Zih-Ying; Su, Chen-Wei; Chen, Kuo-Ping

2018-01-01

This study sought to optimize the dimensional characteristics of paired-strips gold nanoantennas embedded in a P3HT: PCBM thin-film by taking into account the tradeoff between the size of the nanostructures and absorber layer as well as the gaps between nanoparticles, to maximize the effective absorption enhancement. The average enhancement behavior within the working region was discussed using integral analysis, which is important for overall enhancement. The discussion would focus on comparing the bands' features of paired-strips nanoantennas embedded in a dielectric thin-film, and in air. By the average absorption 3D slices plots, in which the dimension width, height, and gap are changed with a fixed wavelength; the optimized dimension of paired-strips nanoantennas could be realized. Fixing the period (400 nm) of paired-strips nanoantennas embedded in P3HT:PCBM thin-films (120 nm in thickness) enhanced absorption by 9.8 times.

A sliding plate microgap rheometer for the simultaneous measurement of shear stress and first normal stress difference

NASA Astrophysics Data System (ADS)

Baik, Seung Jae; Moldenaers, Paula; Clasen, Christian

2011-03-01

A new generation of the "flexure-based microgap rheometer" (the N-FMR) has been developed which is also capable of measuring, in addition to the shear stress, the first normal stress difference of micrometer thin fluid films. This microgap rheometer with a translation system based on compound spring flexures measures the rheological properties of microliter samples of complex fluids confined in a plane couette configuration with gap distances of h = 1-400 μm up to shear rates of dot γ = 3000 s-1. Feed back loop controlled precise positioning of the shearing surfaces with response times <1 ms enables to control the parallelism within 1.5 μrad and to maintain the gap distance within 20 nm. This precise gap control minimizes squeeze flow effects and allows therefore to measure the first normal stress difference N1 of the thin film down to a micrometer gap distance, with a lower limit of {{N_1 }/{dot γ }} = 9.375 × 10^{ - 11} {η/{h^2 }} that depends on the shear viscosity η and the squared inverse gap. Structural development of complex fluids in the confinement can be visualized by using a beam splitter on the shearing surface and a long working distance microscope. In summary, this new instrument allows to investigate the confinement dependent rheological and morphological evolution of micrometer thin films.

Advances in polycrystalline thin-film photovoltaics for space applications

NASA Technical Reports Server (NTRS)

Lanning, Bruce R.; Armstrong, Joseph H.; Misra, Mohan S.

1994-01-01

Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical methods. Both laser and mechanical scribing operations are used to monolithically integrate (series interconnect) the individual cells into modules. Results will be presented at the cell and module development levels with a brief description of the test methods used to qualify these devices for space applications. The approach and development efforts are directed towards large-scale manufacturability of established thin-film, polycrystalline processing methods for large area modules with less emphasis on maximizing small area efficiencies.

Gap junctions on hippocampal mossy fiber axons demonstrated by thin-section electron microscopy and freeze–fracture replica immunogold labeling

PubMed Central

Hamzei-Sichani, Farid; Kamasawa, Naomi; Janssen, William G. M.; Yasumura, Thomas; Davidson, Kimberly G. V.; Hof, Patrick R.; Wearne, Susan L.; Stewart, Mark G.; Young, Steven R.; Whittington, Miles A.; Rash, John E.; Traub, Roger D.

2007-01-01

Gap junctions have been postulated to exist between the axons of excitatory cortical neurons based on electrophysiological, modeling, and dye-coupling data. Here, we provide ultrastructural evidence for axoaxonic gap junctions in dentate granule cells. Using combined confocal laser scanning microscopy, thin-section transmission electron microscopy, and grid-mapped freeze–fracture replica immunogold labeling, 10 close appositions revealing axoaxonic gap junctions (≈30–70 nm in diameter) were found between pairs of mossy fiber axons (≈100–200 nm in diameter) in the stratum lucidum of the CA3b field of the rat ventral hippocampus, and one axonal gap junction (≈100 connexons) was found on a mossy fiber axon in the CA3c field of the rat dorsal hippocampus. Immunogold labeling with two sizes of gold beads revealed that connexin36 was present in that axonal gap junction. These ultrastructural data support computer modeling and in vitro electrophysiological data suggesting that axoaxonic gap junctions play an important role in the generation of very fast (>70 Hz) network oscillations and in the hypersynchronous electrical activity of epilepsy. PMID:17640909

Field-driven mesoscale phase transition in polarized colloids in microgravity

NASA Astrophysics Data System (ADS)

Khusid, Boris; Elele, Ezinwa

2014-11-01

An unexpected phase transition in a polarized suspension was reported by Kumar, Khusid, Acrivos, PRL 95, 258301, 2005 and Agarwal, Yethiraj, PRL 102, 198301, 2009. Following the field application, particles aggregated head-to-tail into chains that bridged the interelectrode gap and then formed a cellular pattern, in which large-scale particle-free voids were enclosed by particle-rich thin walls. Surprisingly, the size of particle-free domains scales linearly with the gap thickness but is insensitive to the particle size and the field strength and frequency. Cellular structures were not observed in simulations of equilibrium in a polarized suspension (Richardi, Weis, J. Chem. Phys. 135, 124502, 2011; Almudallal, Saika-Voivod, PRE 84, 011402, 2011). Nonequilibrium simulations (Park, Saintillan, PRE 83, 041409, 2011) showed cellular-like structures but at a particle concentration much higher than in experiments. A requirement for precise matching of densities between particles and a fluid to avoid gravity effects limits terrestrial experiments to negatively polarized particles. We will present data on positively polarized non-buoyancy-matched particles and the development of experiments in the International Space Station needed to evaluate gravity contribution. Supported by NASA's Physical Science Research Program, NNX13AQ53G.

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Gap Test Calibrations and Their Scaling

NASA Astrophysics Data System (ADS)

Sandusky, Harold

2011-06-01

Common tests for measuring the threshold for shock initiation are the NOL large scale gap test (LSGT) with a 50.8-mm diameter donor/gap and the expanded large scale gap test (ELSGT) with a 95.3-mm diameter donor/gap. Despite the same specifications for the explosive donor and polymethyl methacrylate (PMMA) gap in both tests, calibration of shock pressure in the gap versus distance from the donor scales by a factor of 1.75, not the 1.875 difference in their sizes. Recently reported model calculations suggest that the scaling discrepancy results from the viscoelastic properties of PMMA in combination with different methods for obtaining shock pressure. This is supported by the consistent scaling of these donors when calibrated in water-filled aquariums. Calibrations with water gaps will be provided and compared with PMMA gaps. Scaling for other donor systems will also be provided. Shock initiation data with water gaps will be reviewed.

Finding Platinum-Coating Gaps On Titanium Anodes

NASA Technical Reports Server (NTRS)

Bodemeijer, Ronnald; Flowers, Cecil E.

1990-01-01

Simple procedure makes gaps visible to eye. New gap-detection method consists of plating thin layer of non-silver-colored metal like copper or gold on anode. Contrast in color between plated metal and bare anode material makes gaps stand out. If anode passes inspection, copper or gold plate removable by reversal of test-plating current. Remains to be determined whether test plating and removal damages anode. New method simpler and more economical than previous attempts to identify gaps in platinum.

Defect States in Copper Indium Gallium Selenide Solar Cells from Two-Wavelength Excitation Photoluminescence Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jensen, Soren A.; Dippo, Patricia; Mansfield, Lorelle M.

2016-11-21

We use two-wavelength excitation photoluminescence spectroscopy to probe defect states in CIGS thin films. Above-Eg excitation is combined with a tunable IR bias light that modulates the population of the defect states. We find that IR illumination in the range of 1400-2000 nm (0.62-0.89 eV) causes a reduction of the PL intensity, the magnitude of which scales linearly with IR power. Further, KF post deposition treatment has only a modest influence on the effect of the IR excitation. Initial data suggest that we have developed an optical characterization tool for band-gap defect states.

Artificially structured thin-film materials and interfaces.

PubMed

Narayanamurti, V

1987-02-27

The ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as molecular beam epitaxy and metal-organic chemical vapor deposition has recently led to the observation of unexpected new physical phenomena and to the creation of entirely new classes of devices. In particular, the growth of materials of variable band gap in technologically important semiconductors such as GaAs, InP, and silicon will be reviewed. Recent results of studies of multilayered structures and interfaces based on the use of advanced characterization techniques such as high-resolution transmission electron microscopy and scanning tunneling microscopy will be presented.

Effects of management thinning on carbon dioxide uptake by a plantation oak woodland in SE England

NASA Astrophysics Data System (ADS)

Wilkinson, Matthew; Eaton, Edward; Casella, Eric; Crow, Peter; Morison, James

2013-04-01

Eddy covariance (EC) methods are widely used to estimate net ecosystem CO2 exchanges from sub-hourly to inter-annual time scales. The majority of forest sites contributing to the global EC networks are located in large, unmanaged forest areas. However, managed and plantation forests have an important role in greenhouse gas emissions abatement, nationally and globally, as exemplified by LULUCF inventory reporting. In the lowland areas of the UK forestry is mainly carried out in small woodlands, heterogeneous in species and structure and with regular management interventions. The aim of this study was to improve our understanding of the influence of management on forest CO2 uptake during a stand-scale thinning. CO2 fluxes have been measured using EC at the 70-80 year old, 90 ha oak-with-understorey plantation of the Straits Inclosure in the Alice Holt Research Forest since 1998. The mean annual net ecosystem productivity (NEP) from EC over 12 years was 486g C m-2 y-1, although there has been substantial inter-annual variation (95 % CI of ± 73g C m-2 y-1). This has been partitioned into a gross primary productivity (GPP) of 2034 ± 145g C m-2 y-1 and an ecosystem respiration rate (Reco) of 1548 ± 122 C m-2 y-1. In 2007 approximately 50% of the woodland area within the EC flux tower footprint was selectively thinned according to normal management prescription with mechanical harvesters. High resolution aerial LiDAR surveys of the whole woodland collected pre- (2006) and post- (2010) thin were used to characterise the canopy gap fraction and tree height changes. We then used EC footprint analysis combined with LiDAR data to quantify the effects of the management thinning and subsequent recovery on the CO2 flux and partitioning. Following the management thinning there was an average reduction in peak midday summer uptakes of approximately 5 μmol CO2 m-2 s-1 (20%) compared to fluxes from the un-thinned area, and a larger depression in night-time efflux. A depression in net daily CO2 uptake was still evident in the summer of 2010, three years after the thin. The implications of such management intervention for woodland C balances are discussed.

Low-temperature growth and electronic structures of ambipolar Yb-doped zinc tin oxide transparent thin films

NASA Astrophysics Data System (ADS)

Oh, Seol Hee; Ferblantier, Gerald; Park, Young Sang; Schmerber, Guy; Dinia, Aziz; Slaoui, Abdelilah; Jo, William

2018-05-01

The compositional dependence of the crystal structure, optical transmittance, and surface electric properties of the zinc tin oxide (Zn-Sn-O, shortened ZTO) thin films were investigated. ZTO thin films with different compositional ratios were fabricated on glass and p-silicon wafers using radio frequency magnetron sputtering. The binding energy of amorphous ZTO thin films was examined by a X-ray photoelectron spectroscopy. The optical transmittance over 70% in the visible region for all the ZTO films was observed. The optical band gap of the ZTO films was changed as a result of the competition between the Burstein-Moss effect and renormalization. An electron concentration in the films and surface work function distribution were measured by a Hall measurement and Kelvin probe force microscopy, respectively. The mobility of the n- and p-type ZTO thin films have more than 130 cm2/V s and 15 cm2/V s, respectively. We finally constructed the band structure which contains band gap, work function, and band edges such as valence band maximum and conduction band minimum of ZTO thin films. The present study results suggest that the ZTO thin film is competitive compared with the indium tin oxide, which is a representative material of the transparent conducting oxides, regarding optoelectronic devices applications.

A high accuracy femto-/picosecond laser damage test facility dedicated to the study of optical thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mangote, B.; Gallais, L.; Zerrad, M.

2012-01-15

A laser damage test facility delivering pulses from 100 fs to 3 ps and designed to operate at 1030 nm is presented. The different details of its implementation and performances are given. The originality of this system relies the online damage detection system based on Nomarski microscopy and the use of a non-conventional energy detection method based on the utilization of a cooled CCD that offers the possibility to obtain the laser induced damage threshold (LIDT) with high accuracy. Applications of this instrument to study thin films under laser irradiation are presented. Particularly the deterministic behavior of the sub-picosecond damagemore » is investigated in the case of fused silica and oxide films. It is demonstrated that the transition of 0-1 damage probability is very sharp and the LIDT is perfectly deterministic at few hundreds of femtoseconds. The damage process in dielectric materials being the results of electronic processes, specific information such as the material bandgap is needed for the interpretation of results and applications of scaling laws. A review of the different approaches for the estimation of the absorption gap of optical dielectric coatings is conducted and the results given by the different methods are compared and discussed. The LIDT and gap of several oxide materials are then measured with the presented instrument: Al{sub 2}O{sub 3}, Nb{sub 2}O{sub 5}, HfO{sub 2}, SiO{sub 2}, Ta{sub 2}O{sub 5}, and ZrO{sub 2}. The obtained relation between the LIDT and gap at 1030 nm confirms the linear evolution of the threshold with the bandgap that exists at 800 nm, and our work expands the number of tested materials.« less

Giant Mechano-Optoelectronic Effect in an Atomically Thin Semiconductor

DOE PAGES

Wu, Wei; Wang, Jin; Ercius, Peter; ...

2018-03-20

Transition metal dichalcogenides (TMDs) are particularly sensitive to mechanical strain as they are capable of experiencing high atomic displacements without nucleating defects to release excess energy. Promising for photonic applications, it has been shown that as TMDs are scaled to a thickness of one monolayer, the photoluminescence response is dramatically enhanced due to the emergence of a direct electronic band gap, compared with multi-layer or bulk TMDs which typically exhibit indirect band gaps. Recently, mechanical strain has also been predicted to enable direct excitonic recombination in these materials, where large changes in the photoluminescence response will occur during an indirect-to-directmore » band gap transition brought on by elastic tensile strain. Here, we demonstrate a two orders of magnitude enhancement in the photoluminescence emission intensity in uniaxially strained single crystalline WSe 2 bilayers. Through a theoretical model which includes experimentally relevant system conditions, we determine this amplification to arise from a significant increase in direct excitonic recombination. Adding confidence to the high levels of elastic strain achieved in this report, we observe strain-independent mode-dependent Grüneisen parameters over the entire range of tensile strain (1– 3.59 %) which were obtained as 1.149±0.027, 0.307±0.061, and 0.357±0.103 for the E 2g, A 1g, and A 2 1g optical phonon modes, respectively. Lastly, these results can inform the predictive strain-engineered design of other atomically thin indirect semiconductors, where a decrease in out-of-plane bonding strength will lead to an increase in the strength of strain-coupled optoelectronic effects.« less

Mixed Valence Perovskite Cs2 Au2 I6 : A Potential Material for Thin-Film Pb-Free Photovoltaic Cells with Ultrahigh Efficiency.

PubMed

Debbichi, Lamjed; Lee, Songju; Cho, Hyunyoung; Rappe, Andrew M; Hong, Ki-Ha; Jang, Min Seok; Kim, Hyungjun

2018-03-01

New light is shed on the previously known perovskite material, Cs 2 Au 2 I 6 , as a potential active material for high-efficiency thin-film Pb-free photovoltaic cells. First-principles calculations demonstrate that Cs 2 Au 2 I 6 has an optimal band gap that is close to the Shockley-Queisser value. The band gap size is governed by intermediate band formation. Charge disproportionation on Au makes Cs 2 Au 2 I 6 a double-perovskite material, although it is stoichiometrically a single perovskite. In contrast to most previously discussed double perovskites, Cs 2 Au 2 I 6 has a direct-band-gap feature, and optical simulation predicts that a very thin layer of active material is sufficient to achieve a high photoconversion efficiency using a polycrystalline film layer. The already confirmed synthesizability of this material, coupled with the state-of-the-art multiscale simulations connecting from the material to the device, strongly suggests that Cs 2 Au 2 I 6 will serve as the active material in highly efficient, nontoxic, and thin-film perovskite solar cells in the very near future. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stabilization of Fermi level via electronic excitation in Sn doped CdO thin films

NASA Astrophysics Data System (ADS)

Das, Arkaprava; Singh, Fouran

2018-04-01

Pure and Sn doped CdO sol-gel derived thin films were deposited on corning glass substrate and further irradiated by swift heavy ion (SHI) (Ag and O) with fluence upto 3×1013 ions/cm2. The observed tensile stress from X-ray diffraction pattern at higher fluence for Ag ions can be corroborated to the imbrications of cylindrical tracks due to multiple impacts. The anomalous band gap enhancement after irradiation may be attributed to the consolidated effect of Burstein-Moss shift (BMS) and impurity induced virtual gap states (ViGs). At higher excitation density as Fermi stabilization level (EFS) tends to coincide with charge neutrality level (CNL), band gap enhancement saturates as further creation of additional defects inside the lattice becomes unsustainable. Raman spectroscopy divulges an intensity enhancement of 478 cm-1 LO phonon mode with Sn doping and irradiation induces further asymmetric peak broadening due to damage and disordering inside the lattice. However for 3% Sn doped thin film irradiated with Ag ions having 3×1013 fluence shows a drastic change in structural properties and reduction in band gap which might be attributed to the generation of localized energy levels between conduction and valance band due to high density of defects.

Fabrication of band gap engineered nanostructured tri-metallic (Mn-Co-Ti) oxide thin films

NASA Astrophysics Data System (ADS)

Mansoor, Muhammad Adil; Yusof, Farazila Binti; Nay-Ming, Huang

2018-04-01

In continuation of our previous studies on photoelectrochemical (PEC) properties of titanium based composite oxide thin films, an effort is made to develop thin films of 1:1:2 manganese-cobalt-titanium oxide composite, Mn2O3-Co2O3-4TiO2 (MCT), using Co(OAc)2 and a bimetallic manganese-titanium complex, [Mn2Ti4(TFA)8(THF)6(OH)4(O)2].0.4THF (1), where OAc = acetato, TFA = trifluoroacetato and THF = tetrahydrofuran, via aerosol-assisted chemical vapour deposition (AACVD) technique. The X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray (EDX) spectroscopic analyses confirmed formation of thin film of Mn2O3-Co2O3-4TiO2 composite material with uniformly distributed agglomerated particles. The average size of 39.5 nm, of the particles embedded inside agglomerates, was estimated by Scherer's equation. Further, UV-Vis spectroscopy was used to estimate the band gap of 2.62 eV for MCT composite thin film.

Transparent nanostructured Fe-doped TiO2 thin films prepared by ultrasonic assisted spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Rasoulnezhad, Hossein; Hosseinzadeh, Ghader; Ghasemian, Naser; Hosseinzadeh, Reza; Homayoun Keihan, Amir

2018-05-01

Nanostructured TiO2 and Fe-doped TiO2 thin films with high transparency were deposited on glass substrate through ultrasonic-assisted spray pyrolysis technique and were used in the visible light photocatalytic degradation of MB dye. The resulting thin films were characterized by scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence spectroscopy, x-ray diffraction (XRD), and UV-visible absorption spectroscopy techniques. Based on Raman spectroscopy results, both of the TiO2 and Fe-doped TiO2 films have anatase crystal structure, however, because of the insertion of Fe in the structure of TiO2 some point defects and oxygen vacancies are formed in the Fe-doped TiO2 thin film. Presence of Fe in the structure of TiO2 decreases the band gap energy of TiO2 and also reduces the electron–hole recombination rate. Decreasing of the electron–hole recombination rate and band gap energy result in the enhancement of the visible light photocatalytic activity of the Fe-doped TiO2 thin film.

Optical and structural properties of amorphous Se x Te100- x aligned nanorods

NASA Astrophysics Data System (ADS)

Al-Agel, Faisal A.

2013-12-01

In the present work, we report studies on optical and structural phenomenon in as-deposited thin films composed of aligned nanorods of amorphous Se x Te100- x ( x = 3, 6, 9, and 12). In structural studies, field emission scanning electron microscopic (FESEM) images suggest that these thin films contain high yield of aligned nanorods. These nanorods show a completely amorphous nature, which is verified by X-ray diffraction patterns of these thin films. Optical studies include the measurement of spectral dependence of absorption, reflection, and transmission of these thin films, respectively. On the basis of optical absorption data, a direct optical band gap is observed. This observation of a direct optical band gap in these nanorods is interesting as chalcogenides normally show an indirect band gap, and due to this reason, these materials could not become very popular for semiconducting devices. Therefore, this is an important report and will open up new directions for the application of these materials in semiconducting devices. The value of this optical band gap is found to decrease with the increase in selenium (Se) concentration. The reflection and absorption data are employed to estimate the values of optical constants (extinction coefficient ( k) and refractive index ( n)). From the spectral dependence of these optical constants, it is found that the values of refractive index ( n) increase, whereas the values of extinction coefficient ( k) decrease with the increase in photon energy. The real and imaginary parts of dielectric constants calculated with the values of extinction coefficient ( k) and refractive index ( n), are found to vary with photon energy and dopant concentration.

Fano-like resonance phenomena by flexural shell modes in sound transmission through two-dimensional periodic arrays of thin-walled hollow cylinders

NASA Astrophysics Data System (ADS)

Kosevich, Yuriy A.; Goffaux, Cecile; Sánchez-Dehesa, Jose

2006-07-01

It is shown that the n=2 and 3 flexural shell vibration modes of thin-walled hollow cylinders result in Fano-like resonant enhancement of sound wave transmission through or reflection from two-dimensional periodic arrays of these cylinders in air. The frequencies of the resonant modes are well described by the analytical theory of flexural (circumferential) modes of thin-walled hollow cylinders and are confirmed by finite-difference time-domain simulations. When the modes are located in the band gaps of the phononic crystal, an enhancement of the band-gap widths is produced by the additional restoring forces caused by the flexural shell deformations. Our conclusions provide an alternative method for the vibration control of airborne phononic crystals.

Construction and performance of ultra thin asphalt friction course

DOT National Transportation Integrated Search

1997-09-01

The Novachip process, also known as ultrathin friction course, was developed in France in 1986. The process utilizes a single piece of equipment to place a thin, gap-graded hot mix asphalt (HMA) onto a relatively thick layer of polymer modified aspha...

Influence of spray time on the optical and electrical properties of CoNi2S4 thin films

NASA Astrophysics Data System (ADS)

El Radaf, I. M.; Fouad, S. S.; Ismail, A. M.; Sakr, G. B.

2018-04-01

In this paper, a facile spray pyrolysis technique was utilized to synthesize CoNi2S4 thin films. The influence of spray time on the structural, optical and electrical properties of the CoNi2S4 thin films was studied. The x-ray diffraction studies of the CoNi2S4 thin films illustrate that the films exhibit a polycrystalline nature with cubic structure. The values of the lattice strain ε, and the dislocation density δ, were decreased as the spray time increase while the grain size has reverse manner to lattice strain ε, and the dislocation density δ. The transmittance and reflectance spectra of the CoNi2S4 thin films were recorded in the wavelength range of (400–2500) nm to evaluate the optical parameters of the CoNi2S4 thin films. Optical absorption coefficient of CoNi2S4 thin films revealed a presence of a direct energy gap and the values of energy gap were decreased from 1.68 to 1.53 eV as the spray time increases from 15 min to 45 min. The nonlinear refractive index of the CoNi2S4 thin films was increased with increasing of the spray time. The CoNi2S4 thin films exhibit single activation energy and the activation energy was decreased as the spray time increased.

Stand development 18 years after gap creation in a uniform Douglas-fir plantation

Treesearch

Robert O. Curtis; Constance A. Harrington; Leslie C. Brodie

2017-01-01

This report gives early results, 18 years after treatment and 30 years after planting, from a trial of early thinning and gap creation intended to increase biodiversity in a very uniform extensive Douglas-fir plantation. Gap creation has introduced canopy irregularity and a substantial hemlock component into what was originally a very uniform pure Douglas-fir...

Optical properties of PVA capped nanocrystalline Cd1-xZnxS thin film synthesized by chemical bath deposition technique

NASA Astrophysics Data System (ADS)

Gogoi, Lipika; Chaliha, Sumbit; Saikia, Prasanta Kumar

2018-04-01

A simple cost effective Chemical Bath Deposition (CBD) technique has been employed for the preparation of nanocrystalline Cd1-xZnxS thin films in an alkaline medium at 333K for 120 minutes in polymer matrix. Optical parameters such as transmittance, optical band gap, reflectance, refractive index and extinction coefficient of the films was made using UV-Visible spectrophotometer. UV-spectroscopy study shows a good transmittance of 80-88% in visible wavelength region for the deposited films. The direct band gap energy (Eg) for the deposited films ranged from 3.5 to 3.7 eV depending on attribution of Zn into CdS. It shows a blue shift with respect to bulk value. A increase in transmittance and band gap is found with the increase of volume of Zn content. Cd1-xZnxS thin films exhibit the least reflectance for all the wavelengths in the visible region. The refractive indices (n) of the Cd1-xZnxS films were found in the range 1.38 to 2.94 in the visible region.

Structural changes in graphene oxide thin film by electron-beam irradiation

NASA Astrophysics Data System (ADS)

Tyagi, Chetna; Lakshmi, G. B. V. S.; Kumar, Sunil; Tripathi, Ambuj; Avasthi, D. K.

2016-07-01

Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 1011 to 2 × 1013 e-/cm2. Our studies using X-ray diffraction, Raman microscopy and UV-Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

Optical Properties of Fe3O4 Thin Films Prepared from the Iron Sand by Spin Coating Method

NASA Astrophysics Data System (ADS)

Yulfriska, N.; Rianto, D.; Murti, F.; Darvina, Y.; Ramli, R.

2018-04-01

Research on magnetic oxide is growing very rapidly. This magnetic oxide can be found in nature that is in iron sand. One of the beaches in Sumatera Barat containing iron sand is Tiram Beach, Padang Pariaman District, Sumatera Barat. The content of iron sand is generally in the form of magnetic minerals such as magnetite, hematite, and maghemit. Magnetite has superior properties that can be developed into thin films. The purpose of this research is to investigate the optical properties of transmittance, absorbance, reflectance and energy gap from Fe3O4 thin films. This type of research is an experimental research. The iron sand obtained from nature is first purified using a permanent magnet, then made in nanoparticle size using HEM-E3D with milling time for 30 hours. After that, the process of making thin film with sol-gel spin coating method. In this research, variation of rotation speed from spin coating is 1000 rpm, 2000 rpm and 3000 rpm. Based on XRD results indicated that the iron sand of Tiram beach contains magnetite minerals and the SEM results show that the thickness of the thin films formed is 25μm, 24μm and 11μm. The characterization tool used for characterizing optical properties is the UV-VIS Spectrophotometer. So it can be concluded that the greater the speed of rotation the thickness of the thin layer will be smaller, resulting in the transmittance and reflectance will be greater, while the absorbance will be smaller. Energy gap obtained from this research is 3,75eV, 3,75eV and 3,74eV. So the average energy gap obtained is 3,75eV.

Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

NASA Astrophysics Data System (ADS)

Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

Determination of the band gap of indium-rich InGaN by means of photoacoustic spectroscopy

NASA Astrophysics Data System (ADS)

Oliva, Robert; Zelewski, Szymon J.; Janicki, Łukasz; Gwóźdź, Katarzyna R.; Serafińczuk, Jarosław; Rudziński, Mariusz; Özbay, Ekmel; Kudrawiec, Robert

2018-03-01

Photoacoustic (PA) measurements have been performed on a series of In x Ga1-x N thin films grown with x > 50%. In order to illustrate the usefulness of this technique, these measurements have been compared with the results obtained by the following conventional techniques: photoluminescence, transmittance and contactless electroreflectance. Amongst all these techniques, only PA spectroscopy exhibited signal without the undesired Fabry-Perot interferences arising from the thin film and buffer layer. By accurately assessing the strain state and composition of our samples, we were able to study the compositional dependence of the band gap of our epilayers. Our results show that a bowing parameter of 1.43 eV successfully describes the compositional dependence of the band gap of InGaN.

Band gap bowing in NixMg1−xO

PubMed Central

Niedermeier, Christian A.; Råsander, Mikael; Rhode, Sneha; Kachkanov, Vyacheslav; Zou, Bin; Alford, Neil; Moram, Michelle A.

2016-01-01

Epitaxial transparent oxide NixMg1−xO (0 ≤ x ≤ 1) thin films were grown on MgO(100) substrates by pulsed laser deposition. High-resolution synchrotron X-ray diffraction and high-resolution transmission electron microscopy analysis indicate that the thin films are compositionally and structurally homogeneous, forming a completely miscible solid solution. Nevertheless, the composition dependence of the NixMg1−xO optical band gap shows a strong non-parabolic bowing with a discontinuity at dilute NiO concentrations of x < 0.037. Density functional calculations of the NixMg1−xO band structure and the density of states demonstrate that deep Ni 3d levels are introduced into the MgO band gap, which significantly reduce the fundamental gap as confirmed by optical absorption spectra. These states broaden into a Ni 3d-derived conduction band for x > 0.074 and account for the anomalously large band gap narrowing in the NixMg1−xO solid solution system. PMID:27503808

On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

NASA Astrophysics Data System (ADS)

Chattopadhyay, P.; Karim, B.; Guha Roy, S.

2013-12-01

The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material.

Tuning the properties of tin oxide thin films for device fabrications

NASA Astrophysics Data System (ADS)

Sudha, A.; Sharma, S. L.; Gupta, A. N.; Sharma, S. D.

2017-11-01

Tin oxide thin films were deposited on well cleaned glass substrates by thermal evaporation in vacuum and were annealed at 500 ∘C in the open atmosphere inside a furnace for 90 min for promoting the sensitivity of the films. The X-ray diffraction studies revealed that the as-deposited films were amorphous in nature and the annealed films showed appreciable crystalline behavior. The annealed thin films were then irradiated using 60Co gamma source. The radiation induced changes were then studied by X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy and I- V characterization. The remarkable increase in the average grain size, the decrement in the energy band gap and resistivity due to the gamma irradiations up to a certain dose and the reversal of these properties at higher doses are the important observations. The large changes in the conductivity and energy band gap of the annealed thin films due to gamma irradiation make these films quite important device material for the fabrication of gamma sensors and dosimeters.

Lamb waves in plates covered by a two-dimensional phononic film

NASA Astrophysics Data System (ADS)

Bonello, Bernard; Charles, Christine; Ganot, François

2007-01-01

The propagation of Lamb waves in silicon plates coated by a very thin two-dimensional phononic film is studied experimentally. The dispersion curves are measured using a laser ultrasonics technique. The data are then compared to the calculated dispersion curves of the uncoated silicon plate. The overall shapes of the lower-order symmetric and antisymmetric Lamb modes are not altered by the thin phononic film, except by the appearing of frequency band gaps at the edges of both the first and the second Brillouin zone. The influence of the filling fraction on the magnitude of the gaps is investigated experimentally.

Note: The design of thin gap chamber simulation signal source based on field programmable gate array.

PubMed

Hu, Kun; Lu, Houbing; Wang, Xu; Li, Feng; Liang, Futian; Jin, Ge

2015-01-01

The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.

Note: The design of thin gap chamber simulation signal source based on field programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Kun; Wang, Xu; Li, Feng

The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.

Properties of Superconducting Mo, Mo2n and Trilayer Mo2n-Mo-Mo2n Thin Films

NASA Technical Reports Server (NTRS)

Barrentine, E. M.; Stevenson, T. R.; Brown, A. D.; Lowitz, A. E.; Noroozian, O.; U-Yen, K.; Eshan, N.; Hsieh, W. T.; Moseley, S. H.; Wollack, E. J.

2014-01-01

We present measurements of the properties of thin film superconducting Mo, Mo2N and Mo2N/Mo/Mo2N trilayers of interest for microwave kinetic inductance detector (MKID) applications. Using microwave resonator devices, we investigate the transition temperature, energy gaps, kinetic inductance, and internal quality factors of these materials. We present an Usadel-based interpretation of the trilayer transition temperature as a function of trilayer thicknesses, and a 2-gap interpretation to understand the change in kinetic inductance and internal resonance quality factor (Q) as a function of temperature.

Gap Test Calibrations And Their Scalin

NASA Astrophysics Data System (ADS)

Sandusky, Harold

2012-03-01

Common tests for measuring the threshold for shock initiation are the NOL large scale gap test (LSGT) with a 50.8-mm diameter donor/gap and the expanded large scale gap test (ELSGT) with a 95.3-mm diameter donor/gap. Despite the same specifications for the explosive donor and polymethyl methacrylate (PMMA) gap in both tests, calibration of shock pressure in the gap versus distance from the donor scales by a factor of 1.75, not the 1.875 difference in their sizes. Recently reported model calculations suggest that the scaling discrepancy results from the viscoelastic properties of PMMA in combination with different methods for obtaining shock pressure. This is supported by the consistent scaling of these donors when calibrated in water-filled aquariums. Calibrations and their scaling are compared for other donors with PMMA gaps and for various donors in water.

Opportunities and challenges to conserve water on the landscape in snow-dominated forests: The quest for the radiative minima and more...

NASA Astrophysics Data System (ADS)

Link, T. E.; Kumar, M.; Pomeroy, J. W.; Seyednasrollah, B.; Ellis, C. R.; Lawler, R.; Essery, R.

2012-12-01

In mountainous, forested environments, vegetation exerts a strong control on snowcover dynamics that affect ecohydrological processes, streamflow regimes, and riparian health. Snowcover deposition and ablation patterns in forests are controlled by a complex combination of canopy interception processes coupled with radiative and turbulent heat flux patterns related to topographic and canopy cover variations. In seasonal snow environments, snowcover ablation dynamics in forests are dominated by net radiation. Recent research indicates that in small canopy gaps a net radiation minima relative to both open and forested environments can occur, but depends strongly on solar angle, gap size, slope, canopy height and stem density. The optimal gap size to minimize radiation to snow was estimated to have a diameter between 1 and 2 times the surrounding vegetation height. Physically-based snowmelt simulations indicate that gaps may increase SWE and desynchronize snowmelt by approximately 3 weeks between north and south facing slopes, relative to undisturbed forests. On east and west facing slopes, small gaps cause melt to be slightly delayed relative to intact forests, and have a minimal effect on melt synchronicity between slopes. Recent research focused on canopy thinning also indicates that a net radiation minima occurs in canopies of intermediate densities. Physically-based radiative transfer simulations using a discrete tree-based model indicate that in mid-latitude level forests, the annually-integrated radiative minima occurs at a tree spacing of 2.65 relative to the canopy height. The radiative minima was found to occur in denser forests on south-facing slopes and sparser forests on north-facing slopes. The radiative minimums in thinned forests are controlled by solar angle, crown geometry and density, tree spacing, slope, and aspect. These results indicate that both gap and homogeneous forest thinning may be used to reduce snowmelt rates or alter melt synchronicity, but the exact configuration will be highly spatially variable. Development of management strategies to conserve water on the landscape to enhance forest and riparian health in a changing climate must also rigorously evaluate the effects of canopy thinning and specific hydrometeorological conditions on net radiation, turbulent fluxes, and snow interception processes.

Small Moon Makes Big Waves

NASA Image and Video Library

2012-12-31

Saturn small moon Daphnis is caught in the act of raising waves on the edges of the Keeler gap, which is the thin dark band in the left half of the image. Waves like these allow scientists to locate small moons in gaps and measure their masses.

Tunable band gap in Bi(Fe1-xMnx)O3 films

NASA Astrophysics Data System (ADS)

Xu, X. S.; Ihlefeld, J. F.; Lee, J. H.; Ezekoye, O. K.; Vlahos, E.; Ramesh, R.; Gopalan, V.; Pan, X. Q.; Schlom, D. G.; Musfeldt, J. L.

2010-05-01

In order to investigate band gap tunability in polar oxides, we measured the optical properties of a series of Bi(Fe1-xMnx)O3 thin films. The absorption response of the mixed metal solid solutions is approximately a linear combination of the characteristics of the two end members, a result that demonstrates straightforward band gap tunability in this system.

Parametric investigation of nano-gap thermophotovoltaic energy conversion

NASA Astrophysics Data System (ADS)

Lau, Japheth Z.-J.; Bong, Victor N.-S.; Wong, Basil T.

2016-03-01

Nano-gap thermophotovoltaic energy converters have the potential to be excellent generators of electrical power due to the near-field radiative effect which enhances the transfer of energy from one medium to another. However, there is still much to learn about this new form of energy converter. This paper seeks to investigate three parameters that affect the performance of nano-gap thermophotovoltaic devices: the emitter material, the thermophotovoltaic cell material, and the cell thickness. Furthermore, the temperature profiles in insulated thin films (cells exposed to below-band gap near-field radiation) are analysed. It was discovered that an effective emitter material is one that has a high generalised emissivity value and is also able to couple with the TPV cell material through surface polaritons while a cell material's electrical properties and its thickness has heavy bearing on its internal quantum efficiency. In regards to the temperature profile, the heat-flux absorbed causes a rise in temperature across the thin film, but is insufficient to generate a temperature gradient across the film.

Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

NASA Technical Reports Server (NTRS)

Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

1998-01-01

Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

Compositional Dependence of Optical and Structural Properties of Nanogranular Mixed ZrO2/ZnO/SnO2 Thin Film

NASA Astrophysics Data System (ADS)

Salari, S.; Ghodsi, F. E.

2018-06-01

A study on the optical properties and photoluminescence (PL) spectra of ternary oxide nanogranular thin films comprising Zr, Zn, and Sn revealed that the change in component ratio could direct the roadmap to improve characteristics of the films. Grazing angle X-ray diffraction analysis showed that incorporation of Sn atoms into the tetragonal structure of Zn/Zr thin film resulted in an amorphous structure. The band gap of film was tunable by precisely controlling the concentration of components. The widening of band gap could correlate to the quantum confinement effect. PL spectra of the composite thin films under excitation at 365 nm showed a sharp red emission with relatively Gaussian line shape, which was intensified in the optimum percentage ratio of 50/30/20. This nearly red emission is attributed to the radiative emission of electrons captured at low-energy traps located near the valence band. An optimum red emission is strongly desirable for use in white LEDs. The comparative study on FTIR spectra of unary, binary, and ternary thin films confirmed successful composition of three different metal oxides in ternary thin films. Detailed investigation on FTIR spectra of ternary compounds revealed that the quenching in PL emission at higher percentage of Sn was originally due to the hydroxyl group.

Effect of 60Co γ-irradiation on structural and optical properties of thin films of Ga10Se80Hg10

NASA Astrophysics Data System (ADS)

Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

2015-08-01

Thin films of Ga10Se80Hg10 have been deposited onto a chemically cleaned Al2O3 substrates by thermal evaporation technique under vacuum. The investigated thin films are irradiated by 60Co γ-rays in the dose range of 50-150 kGy. X-ray diffraction patterns of the investigated thin films confirm the preferred crystallite growth occurs in the tetragonal phase structure. It also shows, the average crystallite size increases after γ-exposure, which indicates the crystallinity of the material increases after γ-irradiation. These results were further supported by surface morphological analysis carried out by scanning electron microscope and atomic force microscope which also shows the crystallinity of the material increases with increasing the γ-irradiation dose. The optical transmission spectra of the thin films at normal incidence were investigated in the spectral range from 190 to 1100 nm. Using the transmission spectra, the optical constants like refractive index (n) and extinction coefficient (k) were calculated based on Swanepoel's method. The optical band gap (Eg) was also estimated using Tauc's extrapolation procedure. The optical analysis shows: the value of optical band gap of investigated thin films decreases and the corresponding absorption coefficient increases continuously with increasing dose of γ-irradiation.

The Realm of Daphnis

NASA Image and Video Library

2017-02-14

Daphnis, one of Saturn's ring-embedded moons, is featured in this view, kicking up waves as it orbits within the Keeler gap. The mosaic combines several images to show more waves in the gap edges. Daphnis is a small moon at 5 miles (8 kilometers) across, but its gravity is powerful enough to disrupt the tiny particles of the A ring that form the Keeler gap's edge. As the moon moves through the Keeler gap, wave-like features are created in both the horizontal and vertical plane. Images like this provide scientists with a close-up view of the complicated interactions between a moon and the rings, as well as the interactions between the ring particles themselves, in the wake of the moon's passage. Three wave crests of diminishing sizes trail Daphnis here. In each subsequent crest, the shape of the wave evolves, as the ring particles within the crests collide with one another. Close examination of Daphnis' immediate vicinity also reveals a faint, thin strand of ring material that almost appears to have been directly ripped out of the A ring by Daphnis. The images in this mosaic were taken in visible light, using the Cassini spacecraft narrow-angle camera at a distance of approximately 17,000 miles (28,000 kilometers) from Daphnis and at a Sun-Daphnis-spacecraft, or phase, angle of 71 degrees. Image scale is 551 feet (168 meters) per pixel. http://photojournal.jpl.nasa.gov/catalog/PIA17212

Thin-ideal internalization: How much is too much?

PubMed

Schaefer, Lauren M; Burke, Natasha L; Thompson, J Kevin

2018-03-16

Internalization of the thin-ideal is a risk factor for eating disorders that frequently persists into recovery and increases patient risk for relapse. Addressing thin-ideal internalization as a core element of eating disorder prevention and treatment produces significant reductions in eating pathology. However, research has not yet quantified levels of thin-ideal internalization that may signal increased versus decreased risk for disordered eating. To address this gap in the literature, receiver operating characteristic (ROC) curve analysis was used to identify a thin-ideal internalization cutoff score that signified clinically-meaningful eating disorder pathology. 787 college women (age M = 20.17, SD = 2.41; BMI M = 23.58, SD = 5.29) were classified as "healthy" (N = 717) or those with significant disordered eating (N = 70) using established clinical cutoffs for the Eating Disorder Examination-Questionnaire. ROC curve analysis was used to test the performance of the Sociocultural Attitudes Towards Appearance Questionnaire-4 (SATAQ-4) Internalization: Thin/Low Body Fat subscale in predicting disordered eating status, and to identify a cutoff score that maximized sensitivity and specificity to discriminate between healthy and disordered eating samples. Mean SATAQ-4 internalization scores were 3.29 (SD = 0.92) and 4.27 (SD = 0.62) for healthy and disordered eating participants, respectively. The SATAQ-4 internalization scores were good predictors of disordered eating status (area under the curve = 0.81, 95% CI: 0.76-0.86). The optimal cutoff of 3.78 (measured on a 1-5 Likert scale) yielded a sensitivity of 0.81 and specificity of 0.64. Overall, results provide preliminary support for the discriminant validity of SATAQ-4 thin internalization scores and suggest that even moderate levels of thin-ideal internalization may be predictive of clinically-significant eating pathology. It may be important for prevention and intervention work to actively seek to reduce internalization levels below this clinical cutoff, though future work is needed to bear this out.

Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films

NASA Astrophysics Data System (ADS)

Pal, Dipayan; Singhal, Jaya; Mathur, Aakash; Singh, Ajaib; Dutta, Surjendu; Zollner, Stefan; Chattopadhyay, Sudeshna

2017-11-01

Atomic Layer Deposition technique was used to grow high quality, very low roughness, crystalline, Zinc Oxide (ZnO) thin films on silicon (Si) and fused quartz (SiO2) substrates to study the optical properties. Spectroscopic ellipsometry results of ZnO/Si system, staggered type-II quantum well, demonstrate that there is a significant drop in the magnitudes of both the real and imaginary parts of complex dielectric constants and in near-band gap absorption along with a blue shift of the absorption edge with decreasing film thickness at and below ∼20 nm. Conversely, UV-vis absorption spectroscopy of ZnO/SiO2, thin type-I quantum well, consisting of a narrower-band gap semiconductor grown on a wider-band gap (insulator) substrate, shows the similar thickness dependent blue-shift of the absorption edge but with an increase in the magnitude of near-band gap absorption with decreasing film thickness. Thickness dependent blue shift, energy vs. 1/d2, in two different systems, ZnO/Si and ZnO/SiO2, show a difference in their slopes. The observed phenomena can be consistently explained by the corresponding exciton (or carrier/s) deconfinement and confinement effects at the ZnO/Si and ZnO/SiO2 interface respectively, where Tanguy-Elliott amplitude pre-factor plays the key role through the electron-hole overlap factor at the interface.

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

NASA Astrophysics Data System (ADS)

Das, Sayantan; Alford, T. L.

2013-06-01

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

[Effects of forest gap size on the architecture of Quercus variablis seedlings on the south slope of Qinling Mountains, west China].

PubMed

Yu, Bi-yun; Zhang, Wen-hui; He, Ting; You, Jian-jian; Li, Gang

2014-12-01

Typical sampling method was conducted to survey the effects of forest gap size on branch architecture, leaf characteristics and their vertical distribution of Quercus variablis seedlings from different size gaps in natural secondary Q. variablis thinning forest, on the south slope of Qinling Mountains. The results showed that gap size significantly affected the diameter, crown area of Q. variablis seedlings. The gap size positively correlated with diameter and negatively correlated with crown area, while it had no significant impact on seedling height, crown length and crown rates. The overall bifurcation ratio, stepwise bifurcation ratio, and ratio of branch diameter followed as large gap > middle gap > small gap > understory. The vertical distribution of first-order branches under different size gaps mainly concentrated at the middle and upper part of trunk, larger diameter first-order branches were mainly distributed at the lower part of trunk, and the angle of first-order branch increased at first and then declined with the increasing seedling height. With the increasing forest gap size, the leaf length, leaf width and average leaf area of seedlings all gradually declined, while the average leaf number per plant and relative total leaf number increased, the leaf length-width ratio kept stable, the relative leaf number was mainly distributed at the middle and upper parts of trunk, the changes of leaf area index was consistent with the change of the relative total number of leaves. There was no significant difference between the diameters of middle gap and large gap seedlings, but the diameter of middle gap seedlings was higher than that of large gap, suggesting the middle gap would benefit the seedlings regeneration and high-quality timber cultivation. To promote the regeneration of Q. variabilis seedlings, and to cultivate high-quality timber, appropriate thinning should be taken to increase the number of middle gaps in the management of Q. variabilis forest.

Growth of Cu2ZnSnS4(CZTS) by Pulsed Laser Deposition for Thin film Photovoltaic Absorber Material

NASA Astrophysics Data System (ADS)

Nandur, Abhishek; White, Bruce

2014-03-01

CZTS (Cu2ZnSnS4) has become the subject of intense interest because it is an ideal candidate absorber material for thin-film solar cells with an optimal band gap (1.5 eV), high absorption coefficient (104 cm-1) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since thin films are deposited under high vacuum with excellent stoichiometry transfer from the target. CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of laser energy fluence and substrate temperature and post-deposition sulfur annealing on the surface morphology, composition and optical absorption have been investigated. Optimal CZTS thin films exhibited a band gap of 1.54 eV with an absorption coefficient of 4x104cm-1. A solar cell utilizing PLD grown CZTS with the structure SLG/Mo/CZTS/CdS/ZnO/ITO showed a conversion efficiency of 5.85% with Voc = 376 mV, Jsc = 38.9 mA/cm2 and Fill Factor, FF = 0.40.

Analytical and numerical modeling of an axisymmetrical electrostatic transducer with interior geometrical discontinuity.

PubMed

Honzík, Petr; Podkovskiy, Alexey; Durand, Stéphane; Joly, Nicolas; Bruneau, Michel

2013-11-01

The main purpose of the paper is to contribute at presenting an analytical and a numerical modeling which would be relevant for interpreting the couplings between a circular membrane, a peripheral cavity having the same external radius as the membrane, and a thin air gap (with a geometrical discontinuity between them), and then to characterize small scale electrostatic receivers and to propose procedures that could be suitable for fitting adjustable parameters to achieve optimal behavior in terms of sensitivity and bandwidth expected. Therefore, comparison between these theoretical methods and characterization of several shapes is dealt with, which show that the models would be appropriate to address the design of such transducers.

Synthesis, characterization, and photocatalytic properties of nanocrystalline NZO thin films

NASA Astrophysics Data System (ADS)

Aryanto, D.; Hastuti, E.; Husniya, N.; Sudiro, T.; Nuryadin, B. W.

2018-03-01

Nanocrystalline Ni-doped ZnO (NZO) thin films were synthesized on glass substrate using sol-gel spin coating methods. The effect of annealing on the structural and optical properties of nanocrystalline thin film was studied using X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), UV-VIS spectrophotometry, and photoluminescence (PL). The results showed that the annealing temperature strongly influenced the physical properties of nanocrystalline NZO thin films. The photocatalytic properties of nanocrystalline NZO thin films were evaluated using an aqueous solution of Rhodamine-B. The photocatalytic activity of nanocrystalline NZO thin films increased with the increase of annealing temperature. The results indicated that the structure, morphology, and band gap energy of nanocrystalline NZO thin films played an important role in photocatalytic activity.

Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

NASA Astrophysics Data System (ADS)

Sathisha, D.; Naik, K. Gopalakrishna

2018-05-01

Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

Generation of Non-Homogeneous Poisson Processes by Thinning: Programming Considerations and Comparision with Competing Algorithms.

DTIC Science & Technology

1978-12-01

Poisson processes . The method is valid for Poisson processes with any given intensity function. The basic thinning algorithm is modified to exploit several refinements which reduce computer execution time by approximately one-third. The basic and modified thinning programs are compared with the Poisson decomposition and gap-statistics algorithm, which is easily implemented for Poisson processes with intensity functions of the form exp(a sub 0 + a sub 1t + a sub 2 t-squared. The thinning programs are competitive in both execution

Producing gapped-ferrite transformer cores

NASA Technical Reports Server (NTRS)

Mclyman, W. T.

1980-01-01

Improved manufacturing techniques make reproducible gaps and minimize cracking. Molded, unfired transformer cores are cut with thin saw and then fired. Hardened semicircular core sections are bonded together, placed in aluminum core box, and fluidized-coated. After winding is run over box, core is potted. Economical method significantly reduces number of rejects.

Electrical, structural and optical properties of tellurium thin films on silicon substrate

NASA Astrophysics Data System (ADS)

Arora, Swati; Vijay, Y. K.

2018-05-01

Tellurium (Te) thin films of various thicknesses (200nm, 275nm, 350nm & 500nm) were prepared on Silicon (Si) using thermal evaporation at vacuum of 10-5 torr. It is observed that the resistivity decreases exponentially with the Increases Temperature. A direct band gap between 0.368 eV to 0.395 eV is obtained at different temperatures with Four Probe Method which shows that when we increase the thickness of material the band gap will exponentially decreases. Samples were analysed through X-ray diffraction and atomic force microscopy to attain complete and reliable micro structural in order.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brandt, Riley E.; Mangan, Niall M.; Li, Jian V.

The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (VOC) as a result of the interface is a critical step in evaluating a new material. In the present work, we fabricate thin-film PV devices using cuprous oxide (Cu2O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensitiesmore » (JVTi). We quantify the loss in VOC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Deo; Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com; Shapaan, M.

Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluatedmore » in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.« less

Intrinsic Compressive Stress in Polycrystalline Films is Localized at Edges of the Grain Boundaries.

PubMed

Vasco, Enrique; Polop, Celia

2017-12-22

The intrinsic compression that arises in polycrystalline thin films under high atomic mobility conditions has been attributed to the insertion or trapping of adatoms inside grain boundaries. This compression is a consequence of the stress field resulting from imperfections in the solid and causes the thermomechanical fatigue that is estimated to be responsible for 90% of mechanical failures in current devices. We directly measure the local distribution of residual intrinsic stress in polycrystalline thin films on nanometer scales, using a pioneering method based on atomic force microscopy. Our results demonstrate that, at odds with expectations, compression is not generated inside grain boundaries but at the edges of gaps where the boundaries intercept the surface. We describe a model wherein this compressive stress is caused by Mullins-type surface diffusion towards the boundaries, generating a kinetic surface profile different from the mechanical equilibrium profile by the Laplace-Young equation. Where the curvatures of both profiles differ, an intrinsic stress is generated in the form of Laplace pressure. The Srolovitz-type surface diffusion that results from the stress counters the Mullins-type diffusion and stabilizes the kinetic surface profile, giving rise to a steady compression regime. The proposed mechanism of competition between surface diffusions would explain the flux and time dependency of compressive stress in polycrystalline thin films.

Intrinsic Compressive Stress in Polycrystalline Films is Localized at Edges of the Grain Boundaries

NASA Astrophysics Data System (ADS)

Vasco, Enrique; Polop, Celia

2017-12-01

The intrinsic compression that arises in polycrystalline thin films under high atomic mobility conditions has been attributed to the insertion or trapping of adatoms inside grain boundaries. This compression is a consequence of the stress field resulting from imperfections in the solid and causes the thermomechanical fatigue that is estimated to be responsible for 90% of mechanical failures in current devices. We directly measure the local distribution of residual intrinsic stress in polycrystalline thin films on nanometer scales, using a pioneering method based on atomic force microscopy. Our results demonstrate that, at odds with expectations, compression is not generated inside grain boundaries but at the edges of gaps where the boundaries intercept the surface. We describe a model wherein this compressive stress is caused by Mullins-type surface diffusion towards the boundaries, generating a kinetic surface profile different from the mechanical equilibrium profile by the Laplace-Young equation. Where the curvatures of both profiles differ, an intrinsic stress is generated in the form of Laplace pressure. The Srolovitz-type surface diffusion that results from the stress counters the Mullins-type diffusion and stabilizes the kinetic surface profile, giving rise to a steady compression regime. The proposed mechanism of competition between surface diffusions would explain the flux and time dependency of compressive stress in polycrystalline thin films.

Effect of dopent on the structural and optical properties of ZnS thin film as a buffer layer in solar cell application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vashistha, Indu B., E-mail: indu-139@yahoo.com; Sharma, S. K.; Sharma, Mahesh C.

2015-08-28

In order to find the suitable alternative of toxic CdS buffer layer, deposition of pure ZnS and doped with Al by chemical bath deposition method have been reported. Further as grown pure and doped thin films have been annealed at 150°C. The structural and surface morphological properties have been characterized by X-Ray diffraction (XRD) and Atomic Force Microscope (AFM).The XRD analysis shows that annealed thin film has been polycrystalline in nature with sphalerite cubic crystal structure and AFM images indicate increment in grain size as well as growth of crystals after annealing. Optical measurement data give band gap of 3.5more » eV which is ideal band gap for buffer layer for solar cell suggesting that the obtained ZnS buffer layer is suitable in a low-cost solar cell.« less

AFM investigation and optical band gap study of chemically deposited PbS thin films

NASA Astrophysics Data System (ADS)

Zaman, S.; Mansoor, M.; Abubakar; Asim, M. M.

2016-08-01

The interest into deposition of nanocrystalline PbS thin films, the potential of designing and tailoring both the topographical features and the band gap energy (Eg) by controlling growth parameters, has significant technological importance. Nanocrystalline thin films of lead sulfide were grown onto glass substrates by chemical bath deposition (CBD) method. The experiments were carried out by varying deposition temperature. We report on the modification of structural and optical properties as a function of deposition temperature. The morphological changes of the films were analyzed by using SEM and AFM. AFM was also used to calculate average roughness of the films. XRD spectra indicated preferred growth of cubic phase of PbS films in (200) direction with increasing deposition time. Optical properties have been studied by UV-Spectrophotometer. From the diffused reflectance spectra we have calculated the optical Eg shift from 0.649-0.636 eV with increasing deposition time.

Thermal annealing induced structural and optical properties of Se{sub 72}Te{sub 25}In{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathak, H. P.; Dwivedi, D. K., E-mail: todkdwivedi@gmail.com; Shukla, Nitesh

2016-05-06

Thin films of a- Se{sub 72}Te{sub 25}In{sub 3} were prepared by vacuum evaporation technique in a base pressure of 10{sup -6} Torr on to well cleaned glass substrate. a-Se{sub 72}Te{sub 25}In{sub 3} thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical absorption spectra of these films were measured in the wavelength range 400-1100 nm in order to derive the absorption coefficient of these films. The optical band gap of as prepared and annealed films as a function of photon energy hasmore » been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.« less

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

DOEpatents

Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

1999-01-01

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

Effect of temperature on optical properties of PMMA/SiO2 composite thin film

NASA Astrophysics Data System (ADS)

Soni, Gyanesh; Srivastava, Subodh; Soni, Purushottam; Kalotra, Pankaj; Vijay, Y. K.

2018-05-01

Effect of temperature on PMMA/SiO2 composites thin films were investigated. Nanocomposite flexible thin films of 60 µm thicknesses with different loading of SiO2 nanoparticles were prepared using solution casting method. SEM images show that SiO2 nanoparticles are distributed uniformly in PMMA matrix without any lumps on the surface, and PMMA/SiO2 nano composite thin films had a smoother and regular morphology. UV-Vis and optical band gap measurements revealed that both the concentration of SiO2 nanoparticles and temperature affect the optical properties of the composite thin film in comparison to the pure PMMA film.

Studies of the Wetting of Gaps in Weightlessness

NASA Astrophysics Data System (ADS)

Collicott, Steven H.; Chen, Yongkang

2010-10-01

The geometry of a thin sheet metal vane terminating near a wall in a surface tension propellant management device (PMD) is common in devices designed by various people. A research program into the capillary fluid physics of the common vane-wall gap began in 1998 with the arrival of the second author at the School of Aeronautics and Astronautics at Purdue University. Drop tower experiments, Surface Evolver computations, and analysis were combined to explore the details of the fluid behavior in the vane-wall gap geometry. Results of four vane-wall gap experiment topics: critical wetting, advance rates, sensitivity to vane orientation, and effect of imperfect initial conditions, are discussed here. This work led to a desire by Weislogel to incorporate this type of geometry into his "Capillary Fluids Experiment" (CFE) that operated flawlessly on the International Space Station in 2006 and 2007. It is found that the wetting of vane-wall gaps is predicted correctly through use of the critical wetting analysis of Concus and Finn. Furthermore, the dynamics of the wetting flows are found to have scaling of flow rates versus time similar to those known for capillary advances in solid corners. In some cases, a seemingly misaligned vane is found to have more rapid capillary advance than for the same vane and gap but with the vane normal to the tank wall. An initial drop tower study of sensitivity to imperfect initial conditions shows that a critical wetting flow is largely immune to small tilts in the initial test orientation but that larger errors can be seen in cases that lack critical wetting and in the measurements of the time history of the meniscus minimum point.

Welding Wires To Thin Thermocouple Films

NASA Technical Reports Server (NTRS)

Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary

1993-01-01

Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

Pure Cubic-Phase Hybrid Iodobismuthates AgBi2 I7 for Thin-Film Photovoltaics.

PubMed

Kim, Younghoon; Yang, Zhenyu; Jain, Ankit; Voznyy, Oleksandr; Kim, Gi-Hwan; Liu, Min; Quan, Li Na; García de Arquer, F Pelayo; Comin, Riccardo; Fan, James Z; Sargent, Edward H

2016-08-08

Bismuth-based hybrid perovskites are candidates for lead-free and air-stable photovoltaics, but poor surface morphologies and a high band-gap energy have previously limited these hybrid perovskites. A new materials processing strategy to produce enhanced bismuth-based thin-film photovoltaic absorbers by incorporation of monovalent silver cations into iodobismuthates is presented. Solution-processed AgBi2 I7 thin films are prepared by spin-coating silver and bismuth precursors dissolved in n-butylamine and annealing under an N2 atmosphere. X-ray diffraction analysis reveals the pure cubic structure (Fd3m) with lattice parameters of a=b=c=12.223 Å. The resultant AgBi2 I7 thin films exhibit dense and pinhole-free surface morphologies with grains ranging in size from 200-800 nm and a low band gap of 1.87 eV suitable for photovoltaic applications. Initial studies produce solar power conversion efficiencies of 1.22 % and excellent stability over at least 10 days under ambient conditions. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Band-Gap Engineering in ZnO Thin Films: A Combined Experimental and Theoretical Study

NASA Astrophysics Data System (ADS)

Pawar, Vani; Jha, Pardeep K.; Panda, S. K.; Jha, Priyanka A.; Singh, Prabhakar

2018-05-01

Zinc oxide thin films are synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and optical spectroscopy. Our results reveal that the structural, morphological, and optical properties are closely related to the stress of the sample provided that the texture of the film remains the same. The anomalous results are obtained once the texture is altered to a different orientation. We support this experimental observation by carrying out first-principles hybrid functional calculations for two different orientations of the sample and show that the effect of quantum confinement is much stronger for the (100) surface than the (001) surface of ZnO. Furthermore, our calculations provide a route to enhance the band gap of ZnO by more than 50% compared to the bulk band gap, opening up possibilities for wide-range industrial applications.

Band Gap Tuning and Defect Tolerance of Atomically Thin Two-Dimensional Organic-Inorganic Halide Perovskites.

PubMed

Pandey, Mohnish; Jacobsen, Karsten W; Thygesen, Kristian S

2016-11-03

Organic-inorganic halide perovskites have proven highly successful for photovoltaics but suffer from low stability, which deteriorates their performance over time. Recent experiments have demonstrated that low dimensional phases of the hybrid perovskites may exhibit improved stability. Here we report first-principles calculations for isolated monolayers of the organometallic halide perovskites (C 4 H 9 NH 3 ) 2 MX 2 Y 2 , where M = Pb, Ge, Sn and X,Y = Cl, Br, I. The band gaps computed using the GLLB-SC functional are found to be in excellent agreement with experimental photoluminescence data for the already synthesized perovskites. Finally, we study the effect of different defects on the band structure. We find that the most common defects only introduce shallow or no states in the band gap, indicating that these atomically thin 2D perovskites are likely to be defect tolerant.

Raman spectra boron doped amorphous carbon thin film deposited by bias assisted-CVD

NASA Astrophysics Data System (ADS)

Ishak, A.; Fadzilah, A. N.; Dayana, K.; Saurdi, I.; Malek, M. F.; Nurbaya, Z.; Shafura, A. K.; Rusop, M.

2018-05-01

Boron doped amorphous carbon thin film carbon was deposited at 200°C-350°C by bias assisted-CVD using palm oil as a precursor material. The structural boron doped amorphous carbon films were discussed by Raman analysis through the evolution of D and G bands. The spectral evolution observed showed the increase of upward shift of D and G peaks as substrate deposition temperatures increased. These structural changes were further correlated with optical gap and the results obtained are discussed and compared. The estimated optical band gap is found to be 1.9 to 2.05 eV and conductivity is to be in the range of 10-5 Scm-1 to 10-4 Scm-1. The decrease of optical band gap is associated to conductivity increased which change the characteristic parameters of Raman spectra including the position of G peak, full width at half maximum of G peak, and ID/IG.

On the Examination of Darcy Permeability a Thin Fibrous Porous Layer

NASA Astrophysics Data System (ADS)

Zhu, Zenghao; Wang, Qiuyun; Wu, Qianhong; Vucbmss Team

2016-11-01

In this paper, we report a novel experimental approach to investigate the Darcy permeability of a soft and thin fibrous porous layer. The project is inspired by recent studies involved compression of very thin porous films and the resultant pore fluid flow inside the confined porous structure. The Darcy permeability plays a critical role during the process, which however, is tricky to measure due to the very thin nature of the porous media. In the current study, a special micro-fluidic device is developed that consists of a rectangular flow channel with adjustable gap height ranging from 20 mm to 0.5 mm. Air is forced through the thin gap filled with testing fibrous materials. By measuring the flow rate and the pressure drop, we have successfully obtained the Darcy permeability of different thin porous sheets at different compression ratios. Furthermore, the surface area of the fibers are evaluated using a Micromeritics® ASAP 2020 (Accelerated Surface Area and Porosimetry) system. We found that, although the functions relating the permeability and porosities are different for different fibrous materials, these functions collapse to a single relationship if one express the permeability as a function of the solid phase surface area per unit volume. This finding provides a useful approach to evaluate the permeability of very thin fibrous porous sheet, which otherwise is difficult to measure directly. This research was supported by the National Science Foundation under Award #1511096.

Atomically thin layers of B-N-C-O with tunable composition.

PubMed

Ozturk, Birol; de-Luna-Bugallo, Andres; Panaitescu, Eugen; Chiaramonti, Ann N; Liu, Fangze; Vargas, Anthony; Jiang, Xueping; Kharche, Neerav; Yavuzcetin, Ozgur; Alnaji, Majed; Ford, Matthew J; Lok, Jay; Zhao, Yongyi; King, Nicholas; Dhar, Nibir K; Dubey, Madan; Nayak, Saroj K; Sridhar, Srinivas; Kar, Swastik

2015-07-01

In recent times, atomically thin alloys of boron, nitrogen, and carbon have generated significant excitement as a composition-tunable two-dimensional (2D) material that demonstrates rich physics as well as application potentials. The possibility of tunably incorporating oxygen, a group VI element, into the honeycomb sp(2)-type 2D-BNC lattice is an intriguing idea from both fundamental and applied perspectives. We present the first report on an atomically thin quaternary alloy of boron, nitrogen, carbon, and oxygen (2D-BNCO). Our experiments suggest, and density functional theory (DFT) calculations corroborate, stable configurations of a honeycomb 2D-BNCO lattice. We observe micrometer-scale 2D-BNCO domains within a graphene-rich 2D-BNC matrix, and are able to control the area coverage and relative composition of these domains by varying the oxygen content in the growth setup. Macroscopic samples comprising 2D-BNCO domains in a graphene-rich 2D-BNC matrix show graphene-like gate-modulated electronic transport with mobility exceeding 500 cm(2) V(-1) s(-1), and Arrhenius-like activated temperature dependence. Spin-polarized DFT calculations for nanoscale 2D-BNCO patches predict magnetic ground states originating from the B atoms closest to the O atoms and sizable (0.6 eV < E g < 0.8 eV) band gaps in their density of states. These results suggest that 2D-BNCO with novel electronic and magnetic properties have great potential for nanoelectronics and spintronic applications in an atomically thin platform.

The formation of rings and gaps in magnetically coupled disc-wind systems: ambipolar diffusion and reconnection

NASA Astrophysics Data System (ADS)

Suriano, Scott S.; Li, Zhi-Yun; Krasnopolsky, Ruben; Shang, Hsien

2018-06-01

Radial substructures in circumstellar discs are now routinely observed by Atacama Large Millimeter/submillimeter Array. There is also growing evidence that disc winds drive accretion in such discs. We show through 2D (axisymmetric) simulations that rings and gaps develop naturally in magnetically coupled disc-wind systems on the scale of tens of au, where ambipolar diffusion (AD) is the dominant non-ideal magnetohydrodynamic effect. In simulations where the magnetic field and matter are moderately coupled, the disc remains relatively laminar with the radial electric current steepened by AD into a thin layer near the mid-plane. The toroidal magnetic field sharply reverses polarity in this layer, generating a large magnetic torque that drives fast accretion, which drags the poloidal field into a highly pinched radial configuration. The reconnection of this pinched field creates magnetic loops where the net poloidal magnetic flux (and thus the accretion rate) is reduced, yielding dense rings. Neighbouring regions with stronger poloidal magnetic fields accrete faster, forming gaps. In better magnetically coupled simulations, the so-called avalanche accretion streams develop continuously near the disc surface, rendering the disc-wind system more chaotic. Nevertheless, prominent rings and gaps are still produced, at least in part, by reconnection, which again enables the segregation of the poloidal field and the disc material similar to the more diffusive discs. However, the reconnection is now driven by the non-linear growth of magnetorotational instability channel flows. The formation of rings and gaps in rapidly accreting yet laminar discs has interesting implications for dust settling and trapping, grain growth, and planet formation.

Enhanced Photocatalytic Activity of Diamond Thin Films Using Embedded Ag Nanoparticles.

PubMed

Li, Shuo; Bandy, Jason A; Hamers, Robert J

2018-02-14

Silver nanoparticles embedded into the diamond thin films enhance the optical absorption and the photocatalytic activity toward the solvated electron-initiated reduction of N 2 to NH 3 in water. Here, we demonstrate the formation of diamond films with embedded Ag nanoparticles <100 nm in diameter. Cross-sectional scanning electron microscopy (SEM), energy-dependent SEM, and energy-dispersive X-ray analysis demonstrate the formation of encapsulated nanoparticles. Optical absorption measurements in the visible and ultraviolet region show that the resulting films exhibit plasmonic resonances in the visible and near-ultraviolet region. Measurements of photocatalytic activity using supraband gap (λ < 225 nm) and sub-band gap (λ > 225 nm) excitation show significantly enhanced ability to convert N 2 to NH 3 . Incorporation of Ag nanoparticles induces a nearly 5-fold increase in activity using a sub-band gap excitation with λ > 225 nm. Our results suggest that internal photoemission, in which electrons are excited from Ag into diamond's conduction band, is an important process that extends the wavelength region beyond diamond's band gap. Other factors, including Ag-induced optical scattering and formation of graphitic impurities are also discussed.

Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Kumar, Sushil; Dayal, Saurabh; Rauthan, C. M. S.; Panwar, O. S.; Malik, Hitendra K.

2012-10-01

In this work, self bias variation, nitrogen introduction and oxygen plasma (OP) treatment approaches have been used for tailoring the band gap of hydrogenated amorphous carbon (a-C:H) thin films. The band gap of a-C:H and modified a- C:H films is varied in the range from 1.25 eV to 3.45 eV, which is found to be nearly equal to the full solar spectrum (1 eV- 3.5 eV). Hence, such a-C:H and modified a-C:H films are found to be potential candidate for the development of full spectrum solar cells. Besides this, computer aided simulation with considering variable band gap a-C:H and modified a- C:H films as window layer for amorphous silicon p-i-n solar cells is also performed by AFORS-HET software and maximum efficiency as ~14 % is realized. Since a-C:H is hard material, hence a-C:H and modified a-C:H films as window layer may avoid the use of additional hard and protective coating particularly in n-i-p configuration.

One-Dimensional Model for the Ultrasonic Response of Resin-Filled Gaps in Automated Tape Layup Composites

NASA Technical Reports Server (NTRS)

Johnston, Patrick H.; Juarez, Peter D.

2017-01-01

Automated tow placement has become a widely used fabrication technique, especially for large aerospace structures. Robotic heads lay down strips (tows) of preimpregnated fiber along programmed paths. The intention is to lay adjacent tows abutted to one another, but sometimes a gap is left between a tow and the previously-placed tow. If a tow gap exists, it fills with resin during cure, forming a fiber-free volume. In immersion ultrasonic pulse-echo measurements of a cured laminate, the gap can be observed to produce a noticeable echo, without significantly attenuating the back-wall reflection of the laminate. To understand this behavior, we considered a one dimensional model of the composite laminate, with a thin layer having the ultrasonic sound speed and density of neat resin, sandwiched between two layers of material having the sound speed and density of fiber-reinforced composite and surrounded on both sides by water. Neglecting attenuation, we considered the transmission and reflection coefficients of each interface, as well as that of the thin resin layer. Using the initial water/composite reflection as a reference, we computed the relative magnitude of the back surface/water reflection in the presence and in the absence of a resin-only layer, as well as the relative magnitude of the reflection arising from a thin resin layer in composite. While the one-dimensional model did not fully match the measurements, it did qualitatively explain the observed behavior.

Cross-scale interactions affect tree growth and intrinsic water ...

EPA Pesticide Factsheets

1. We investigated the potential of cross-scale interactions to affect the outcome of density reduction in a large-scale silvicultural experiment. 2. We measured tree growth and intrinsic water-use efficiency (iWUE) based on stable carbon isotopes (13C) to investigate the impacts of thinning across a range of progressively finer spatial scales: site, stand, hillslope position, and neighborhood position. In particular, we focused on the influence of thinning beyond the boundaries of thinned stands to include impacts on downslope and neighboring stands across sites varying in soil moisture. 3. Trees at the wet site responded to thinning with increased growth when compared with trees at the dry site. Additionally, trees in thinned stands at the dry site responded with increased iWUE while trees in thinned stands at the wet site showed no difference in iWUE compared to unthinned stands. 4. We hypothesized that water is not the primary limiting factor for growth at our sites, but that thinning released other resources, such as growing space or nutrients to drive the growth response. At progressively finer spatial scales we found that the responses of trees was not driven by hillslope location (i.e., downslope of thinning) but to changes in local neighborhood tree density. 5. The results of this study demonstrated that water can be viewed as an “agent” that allows us to investigate cross-scale interactions as it links coarse to finer spatial scales and vice ver

Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition

NASA Astrophysics Data System (ADS)

Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag

2017-03-01

Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm-1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2- valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400 nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106 Ω·cm as the film thickness increased.

Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

NASA Astrophysics Data System (ADS)

Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

2018-06-01

Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

Synthesis and Characterization of Phase-pure Copper Zinc Tin Sulfide (Cu2ZnSnS4) Nanoparticles

NASA Astrophysics Data System (ADS)

Monahan, Bradley Michael

Semiconductor nanoparticles have been an important area of research in many different disciplines. A substantial amount of this work has been put toward advancing the field of photovoltaics. However, current p-type photovoltaic materials can not sustain the large scale production needed for future energy demands due to their low elemental abundance. Therefore, Earth abundant semiconductor materials have become of great interest to the photovoltaic community especially, the material copper zinc tin sulfide (CZTS), also known by its mineral name kesterite. CZTS exhibits desirable properties for photovoltaics, such as elemental abundance, high absorption coefficient (~104 cm-1 ), high carrier concentration, and optimum direct band gap (1.5 eV). To date, solution based approaches for making CZTS have yielded the most promising conversion efficiencies in solar cells. To that end, the motivation of nanoparticle based inks that can be used in high throughput production are an attractive route for large scale deployment. This has driven the need to make high quality CZTS nanoparticles that possess the properties of the pure kesterite phase with high monodispersity that can be deposited into dense thin films. The inherent challenge of making a quaternary compound of a single phase has made this a difficult task; however, some of those fundamental problems are addressed in this thesis. This had resulted in the synthesis of phase-pure k-CZTS confirmed by powder X-ray diffraction, Raman spectroscopy, UV-visible absorption spectroscopy and energy dispersive x-ray spectroscopy. Furthermore, ultra-fast laser spectroscopy was done on CZTS thin films made from phase-pure kesterite nanoparticles synthesized in this work. This thesis provides new data that directly probes the lifetime of photogenerated free carriers in kesterite CZTS (k-CZTS) thin films.

Facile synthesis and photo electrochemical performance of SnSe thin films

NASA Astrophysics Data System (ADS)

Pusawale, S. N.; Jadhav, P. S.; Lokhande, C. D.

2018-05-01

Orthorhombic structured SnSe thin films are synthesized via SILAR (successive ionic layer adsorption and reaction) method on glass substrates. The structural properties of thin films are characterized by x-ray diffraction, scanning electron microscopy studies from which nanoparticles with an elongated shape and hydrophilic behavior are observed. UV -VIS absorption spectroscopy study showed the maximum absorption in the visible region with a direct band gap of 1.55 eV. The photo electrochemical study showed p-type electrical conductivity.

Epitaxial Ba2IrO4 thin-films grown on SrTiO3 substrates by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Nichols, J.; Korneta, O. B.; Terzic, J.; Cao, G.; Brill, J. W.; Seo, S. S. A.

2014-03-01

We have synthesized epitaxial Ba2IrO4 (BIO) thin-films on SrTiO3 (001) substrates by pulsed laser deposition and studied their electronic structure by dc-transport and optical spectroscopic experiments. We have observed that BIO thin-films are insulating but close to the metal-insulator transition boundary with significantly smaller transport and optical gap energies than its sister compound, Sr2IrO4. Moreover, BIO thin-films have both an enhanced electronic bandwidth and electronic-correlation energy. Our results suggest that BIO thin-films have great potential for realizing the interesting physical properties predicted in layered iridates.

Electronic properties of epitaxial silicene: a LT-STM/STS study

NASA Astrophysics Data System (ADS)

Fleurence, Antoine; Lee, Chi-Cheng; Ozaki, Taisuke; Yamada-Takamura, Yukiko; Yoshida, Yasuo; Hasegawa, Yukio

2013-03-01

The astonishing properties of silicene, the Si-counterpart of graphene, together with pioneering experimental observations, triggered in the very recent years, an exponentially increasing interest for this atom-thick material, both at fundamental level and for applications in high-speed electronic devices. We demonstrated, that the spontaneous segregation of silicon on (0001) surface of zirconium diboride (ZrB2) thin films epitaxied on Si(111) wafers gives rise to a wide-scale uniform two-dimensional silicene sheet. The silicene nature of the honeycomb structure imaged by scanning tunneling microscopy is evidenced by the observation of gap-opened π-electronic bands. The band gap opening is primarily due the specifically imprinted buckling. Here, we present the results of a low-temperature scanning tunneling spectroscopy investigation, which evidences the n-doped nature of silicene. The mapping of the local density of states, together with density functional theory give precious insights into the microscopic origin of the electronic bands of silicene. In particular, it shows the correlation between the degree of sp2 hybridization of different Si atoms in the internal structure and the character of the electronic bands.

Synthesis and optoelectronic properties of dodecyl substituted diphenylamine and pyridine based conjugated molecule

NASA Astrophysics Data System (ADS)

Priyanka, V.; Vijai Anand, A. S.; Mahesh, K.; Karpagam, S.

2017-11-01

The new donor-acceptor type conjugated moiety, namely 3-([4-(2-Cyano-2pyridine-2yl-vinyl)-phenyl]-dodecyl-amino)-phenyl)-2-pyridine-2-yl-acrylonitrile (DPA-PA) has been synthesized according to the Knoevenagel condensation. Here dodecyloxy diphenylamine moiety acts as an electron donor and cyano-pyridyl moiety acts as an electron acceptor. These moieties are recently showing great interest in optoelectronic applications. The structure of the DPA-PA was confirmed by FT-IR, 1H NMR. The final product showed great solubility in common organic solvents such as toluene, tetrahydrofuran, ethyl acetate, dichloromethane, chloroform etc due to the dodecyl chain. The absorption maximum of DPA-PA appeared at 433 nm in chloroform solution. The optical band gap is 2.2 eV calculated from thin film absorption edge (550 nm). The photoluminescence spectra exhibited a maximum peak at 513 nm with greenish fluorescence in chloroform solution and at 541 nm as the thin film state. The emission spectra of thin film state are 28 nm red shifted with broadening peak. The lower electrochemical band gap 1.55 eV was observed by cyclic voltammetry. This type of low band gap materials has much attention for their various potential applications in optoelectronic devices.

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

NASA Astrophysics Data System (ADS)

Sun, Xigui; Gao, Kewei; Pang, Xiaolu; Yang, Huisheng; Volinsky, Alex A.

2015-11-01

Lead selenide thin films with different microstructure were deposited on Si (1 0 0) substrates using magnetron sputtering at 50 °C, 150 °C and 250 °C, respectively. The crystal structure of the sputtered PbSe thin films varies from amorphous crystalline to columnar grain, and then to double-layer (nano-crystalline layer and columnar grain layer) structure as the deposition temperature increases, which is due to the dominating growth mode of the thin films changes from Frank-van der Merwe (or layer-by-layer) growth mode at 50 °C to Volmer-Weber (or 3D island) growth mode at 150 °C, and then to Stranski-Krastanow (or 3D island-on-wetting-layer) growth mode at 250 °C. The growth mechanism of the sputtered PbSe thin films is mainly dominated by the surface and strain energy contributions. Moreover, the strain energy contribution is more prominent when the deposition temperature is less than 180 °C, while, the surface energy contribution is more prominent when the deposition temperature is higher than 180 °C. The absorption spectra of the sputtered PbSe thin films are in 3.1-5 μm range. Besides, the sputtered PbSe thin film prepared at 250 °C has two different optical band gaps due to its unique double-layer structure. According to the theoretical calculation results, the variation of the band gap with the deposition temperature is determined by the shift of the valence band maximum with the lattice constant.

Desire for Thinness among High School Cheerleaders: Relationship to Disordered Eating and Weight Control Behaviors.

ERIC Educational Resources Information Center

Lundholm, Jean K.; Littrell, John M.

1986-01-01

Examined cheerleaders' desire for thinness in relationship to disordered eating and weight control behaviors. A Desire for Thinness Scale and selected scales from three eating disorder instruments were administered to 751 high school cheerleaders. Cheerleaders who expressed a strong desire for thinness had significantly higher scores on seven of…

Thin film nano-photocatalyts with low band gap energy for gas phase degradation of p-xylene: TiO2 doped Cr, UiO66-NH2 and LaBO3 (B  =  Fe, Mn, and Co)

NASA Astrophysics Data System (ADS)

Loc Luu, Cam; Thuy Van Nguyen, Thi; Nguyen, Tri; Nguyen, Phung Anh; Hoang, Tien Cuong; Ha, Cam Anh

2018-03-01

By dip-coating technique the thin films of nano-photocatalysts TiO2, Cr-doped TiO2, LaBO3 perovskites (B  =  Fe, Mn, and Co) prepared by sol-gel method, and UiO66-NH2 prepared by a solvothermal were obtained and employed for gas phase degradation of p-xylene. Physicochemical characteristics of the catalysts were examined by the methods of BET, SEM, TEM, XRD, FT-IR, TGA, Raman and UV-vis spectroscopies. The thickness of film was determined by a Veeco-American Dektek 6M instrument. The activity of catalysts was evaluated in deep photooxidation of p-xylene in a microflow reactor at room temperature with the radiation sources of a UV (λ  =  365 nm) and LED lamps (λ  =  400-510 nm). The obtained results showed that TiO2 and TiO2 doped Cr thin films was featured by an anatase phase with nanoparticles of 10-100 nm. Doping TiO2 with 0.1%mol Cr2O3 led to reduce band gap energy from 3.01 down to 1.99 eV and extend the spectrum of photon absorption to the visible region (λ  =  622 nm). LaBO3 perovkite thin films were also featured by a crystal phase with average particle nanosize of 8-40 nm, a BET surface area of 17.6-32.7 m2 g-1 and band gap energy of 1.87-2.20 eV. UiO66-NH2 was obtained in the ball shape of 100-200 nm, a BET surface area of 576 m2 g-1 and a band gap energy of 2.83 eV. The low band gap energy nano-photocatalysts based on Cr-doped TiO2 and LaBO3 perovskites exhibited highly stable and active for photo-degradation of p-xylene in the gas phase under radiation of UV-vis light. Perovskite LaFeO3 and Cr-TiO2 thin films were the best photocatalysts with a decomposition yield being reached up to 1.70 g p-xylene/g cat.

Selective femtosecond laser structuring of dielectric thin films with different band gaps: a time-resolved study of ablation mechanisms

NASA Astrophysics Data System (ADS)

Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

2016-12-01

Ultrashort pulse lasers have been increasingly gaining importance for the selective structuring of dielectric thin films in industrial applications. In a variety of works the ablation of thin SiO2 and SiNx films from Si substrates has been investigated with near infrared laser wavelengths with photon energies of about 1.2 eV where both dielectrics are transparent (E_{{gap,SiO2}}≈ 8 eV; E_{{gap,SiN}x}≈ 2.5 eV). In these works it was found that few 100 nm thick SiO2 films are selectively ablated with a "lift-off" initiated by confined laser ablation whereas the SiN_{{x}} films are ablated by a combination of confined and direct laser ablation. In the work at hand, ultrafast pump-probe imaging was applied to compare the laser ablation dynamics of the two thin film systems directly with the uncoated Si substrate—on the same setup and under identical parameters. On the SiO2 sample, results show the pulse absorption in the Si substrate, leading to the confined ablation of the SiO2 layer by the expansion of the substrate. On the SiN_{{x}} sample, direct absorption in the layer is observed leading to its removal by evaporation. The pump-probe measurements combined with reflectivity corrected threshold fluence investigations suggest that melting of the Si substrate is sufficient to initiate the lift-off of an overlaying transparent film—evaporation of the substrate seems not to be necessary.

Accelerating development of late-successional conditions in young managed Douglas-fir stands: a simulation study.

Treesearch

Steven L. Garman; John H. Cissel; James H. Mayo

2003-01-01

The goal of this simulation study was to provide information for defining thinning regimes for young Douglas-fir (Pseudotsuga menziesii (Mirb.) Franco) stands in the Central Cascades Adaptive Management Area, located in west-central Oregon. Specifically, this study used the ZELIG.PNW (3.0) gap model to evaluate effects of experimental thinning treatments on the...

Topological Anderson insulator phase in a Dirac-semimetal thin film

NASA Astrophysics Data System (ADS)

Chen, Rui; Xu, Dong-Hui; Zhou, Bin

2017-06-01

The recently discovered topological Dirac semimetal represents a new exotic quantum state of matter. Topological Dirac semimetals can be viewed as three-dimensional analogues of graphene, in which the Dirac nodes are protected by crystalline symmetry. It has been found that the quantum confinement effect can gap out Dirac nodes and convert Dirac semimetal to a band insulator. The band insulator is either a normal insulator or quantum spin Hall insulator, depending on the thin-film thickness. We present the study of disorder effects in a thin film of Dirac semimetals. It is found that moderate Anderson disorder strength can drive a topological phase transition from a normal band insulator to a topological Anderson insulator in a Dirac-semimetal thin film. The numerical calculation based on the model parameters of Dirac semimetal Na3Bi shows that in the topological Anderson insulator phase, a quantized conductance plateau occurs in the bulk gap of the band insulator, and the distributions of local currents further confirm that the quantized conductance plateau arises from the helical edge states induced by disorder. Finally, an effective medium theory based on the Born approximation fits the numerical data.

Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

NASA Astrophysics Data System (ADS)

Suhandi, A.; Tayubi, Y. R.; Arifin, P.

2016-04-01

Metal Organic Chemical Vapor Deposition (MOCVD) is a method for growing a solid material (in the form of thin films, especially for semiconductor materials) using vapor phase metal organic sources. Studies on the growth mechanism of GaAs1-xSbx ternary alloy thin solid film in the range of miscibility-gap using metal organic sources trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been done to understand the physical and chemical processes involved. Knowledge of the processes that occur during alloy formation is very important to determine the couple of growth condition and growth parameters are appropriate for yield high quality GaAs1-xSbx alloy. The mechanism has been studied include decomposition of metal organic sources and chemical reactions that may occur, the incorporation of the alloy elements forming and the contaminants element that are formed in the gown thin film. In this paper presented the results of experimental data on the growth of GaAs1-xSbx alloy using Vertical-MOCVD reactor to demonstrate its potential in growing GaAs1-xSbx alloy in the range of its miscibility gap.

Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films

NASA Astrophysics Data System (ADS)

Ali, H. M.; Abd El-Ghanny, H. A.

2008-04-01

Thin films of (CdSe)90(In2O3)10, (CdSe)90(SnO2)10 and (CdSe)90(ZnO)10 have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps Eg and Eg+Δ due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.

Structure and photoelectrochemistry of silver-copper-indium-diselenide ((AgCu)InSe2) thin film

NASA Astrophysics Data System (ADS)

Zhang, Lin Rui; Li, Tong; Wang, Hao; Pang, Wei; Chen, Yi Chuan; Song, Xue Mei; Zhang, Yong Zhe; Yan, Hui

2018-02-01

In this work, silver (Ag) precursors with different thicknesses were sputtered on the surfaces of CuIn alloys, and (AgCu)InSe2 (ACIS) films were formed after selenization at 550 °C under nitrogen condition using a rapid thermal process furnace. The structure and electrical properties of the ACIS films were investigated. The result showed that the distribution of Ag+ ion was more uniform with increasing the thickness of Ag precursor, and the surface of the thin-film became more homogeneous and denser. When Ag/Cu ratio ≥0.249, the small grain particles disappeared. The band gap can be rationally controlled by adjusting Ag content. When (Ag + Cu)/In ratio ≥ 1.15, the surface of the ACIS thin-film mainly exhibited n-type semiconductor. Through the photoelectrochemistry measurement, it was observed that the incorporation of Ag+ ions could improve photocurrent by adjusting the band gap. With the Ag precursor thickness increased, the dark current decreased at the more negative potential.

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass.

PubMed

Emmer, Hal; Chen, Christopher T; Saive, Rebecca; Friedrich, Dennis; Horie, Yu; Arbabi, Amir; Faraon, Andrei; Atwater, Harry A

2017-07-05

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17  cm -3 that exhibited mobilities as high as 16 cm 2 V -1 s -1 . Due to their unique optical properties, these films hold much promise for use in advanced optical devices.

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

DOE PAGES

Emmer, Hal; Chen, Christopher T.; Saive, Rebecca; ...

2017-07-05

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnessesmore » below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.« less

Multi-Material Front Contact for 19% Thin Film Solar Cells.

PubMed

van Deelen, Joop; Tezsevin, Yasemin; Barink, Marco

2016-02-06

The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,Ga)Se₂ (CIGS), CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO) sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

NASA Astrophysics Data System (ADS)

Zhang, Dainan; Liao, Yulong; Jin, Lichuan; Wen, Qi-Ye; Zhong, Zhiyong; Wen, Tianlong; Xiao, John Q.

2017-12-01

Ge-based alloys have drawn great interest as promising materials for their superior visible to infrared photoelectric performances. In this study, we report the preparation and optical properties of germanium-bismuth (Ge1-xBix) thin films by using molecular beam epitaxy (MBE). GeBi thin films belong to the n-type conductivity semiconductors, which have been rarely reported. With the increasing Bi-doping content from 2 to 22.2%, a series of Ge1-xBix thin film samples were obtained and characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. With the increase of Bi content, the mismatch of lattice constants increases, and the GeBi film shifts from direct energy band-gaps to indirect band-gaps. The moderate increase of Bi content reduces optical reflectance and promotes the transmittance of extinction coefficient in infrared wavelengths. The absorption and transmittance of GeBi films in THz band increase with the increase of Bi contents.

Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulutas, Cemal, E-mail: cemalulutas@hakkari.edu.tr; Gumus, Cebrail

2016-03-25

MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E{sub g}) of the film was determined. XRD measurements reveal that the film is crystallized inmore » the wurtzite phase and changed to tetragonal Mn{sub 3}O{sub 4} phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.« less

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emmer, Hal; Chen, Christopher T.; Saive, Rebecca

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF 2 vapor etch. The resulting GaP films have surface roughnessesmore » below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 10 17 cm -3 that exhibited mobilities as high as 16 cm 2V -1s -1. Therefore, due to their unique optical properties, these films hold much promise for use in advanced optical devices.« less

Structural, electrical and optical properties of nanostructured ZrO2 thin film deposited by SILAR method

NASA Astrophysics Data System (ADS)

Salodkar, R. V.; Belkhedkar, M. R.; Nemade, S. D.

2018-05-01

Successive Ionic Layer Adsorption and Reaction (SILAR) method has been employed to deposit nanocrystalline ZrO2 thin film of thickness 91 nm onto glass substrates using ZrOCl2.8H2O and NaOH as cationic and anionic precursors respectively. The structural and surface morphological characterizations have been carried out by means of X-ray diffraction and field emission scanning electron microscopy confirms the nanocrystalline nature of ZrO2 thin film. The direct optical band gap and activation energy of the ZrO2 thin film are found to be 4.74 and 0.80eV respectively.

Sb:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Bhadrapriya B., C.; Varghese, Anitta Rose; Amarendra, G.; Hussain, Shamima

2018-04-01

Transparent thin films of antimony doped SnO2 have been synthesized and characterized using optical spectroscopy, XRD, RAMAN and FESEM. The band gap of Sb doped tin oxide thin film samples were found to vary from 3.26 eV to 3.7 eV. The XRD peaks showed prominent rutile SnO2 peaks with diminished intensity due to antimony doping. A wide band in the range 550-580 cm-1 was observed in raman spectra and is a feature of nano-sized SnO2. SEM images showed flower-like structures on thin film surface, a characteristic feature of antimony.

Third order nonlinearity in pulsed laser deposited LiNbO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tumuluri, Anil; Rapolu, Mounika; Rao, S. Venugopal, E-mail: kcjrsp@uohyd.ernet.in, E-mail: svrsp@uohyd.ernet.in

2016-05-06

Lithium niobate (LiNbO{sub 3}) thin films were prepared using pulsed laser deposition technique. Structural properties of the same were examined from XRD and optical band gap of the thin films were measured from transmittance spectra recorded using UV-Visible spectrophotometer. Nonlinear optical properties of the thin films were recorded using Z-Scan technique. The films were exhibiting third order nonlinearity and their corresponding two photon absorption, nonlinear refractive index, real and imaginary part of nonlinear susceptibility were calculated from open aperture and closed aperture transmission curves. From these studies, it suggests that these films have potential applications in nonlinear optical devices.

Synthesis of nanocrystalline ZnO thin films by electron beam evaporation

NASA Astrophysics Data System (ADS)

Kondkar, V.; Rukade, D.; Bhattacharyya, V.

2018-05-01

Nanocrystalline ZnO thin films have potential for applications in variety of optoelectronic devices. In the present study, nanocrystalline thin films of ZnO are grown on fused silica substrate using electron beam (e-beam) evaporation technique. Phase identification is carried out using Glancing angle X-ray diffraction (GAXRD) and Raman spectroscopy. Ultraviolet-Visible (UV-Vis) spectroscopic analysis is carried out to calculate energy band gap of the ZnO film. Surface morphology of the film is investigated using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). Highly quality nanocrystalline thin films of hexagonal wurtzite ZnO are synthesized using e-beam evaporation technique.

Rietveld-refinement and optical study of the Fe doped ZnO thin film by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, Arun; Dhiman, Pooja; Singh, M.

2017-05-01

Fe Doped ZnO Dilute Magnetic Semiconductor thin film prepared by RF magnetron sputtering on glass substrate and Influence of 3% Fe-doping on structural and Optical properties has been studied. The Rietveld-refinement analysis shows that Fe doping has a significant effect on crystalline structure, grain size and strain in the thin film. Two dimensional and three-dimensional atom probe tomography of the thin film shows that Fe ions are randomly distributed which is supported by Xray Diffraction (XRD). Fe-doping is found to effectively modify the band gap energy up to 3.5 eV.

Scalable Low-Band-Gap Sb2Se3 Thin-Film Photocathodes for Efficient Visible-Near-Infrared Solar Hydrogen Evolution.

PubMed

Zhang, Li; Li, Yanbo; Li, Changli; Chen, Qiao; Zhen, Zhen; Jiang, Xin; Zhong, Miao; Zhang, Fuxiang; Zhu, Hongwei

2017-12-26

A highly efficient low-band-gap (1.2-0.8 eV) photoelectrode is critical for accomplishing efficient conversion of visible-near-infrared sunlight into storable hydrogen. Herein, we report an Sb 2 Se 3 polycrystalline thin-film photocathode having a low band gap (1.2-1.1 eV) for efficient hydrogen evolution for wide solar-spectrum utilization. The photocathode was fabricated by a facile thermal evaporation of a single Sb 2 Se 3 powder source onto the Mo-coated soda-lime glass substrate, followed by annealing under Se vapor and surface modification with an antiphotocorrosive CdS/TiO 2 bilayer and Pt catalyst. The fabricated Sb 2 Se 3 (Se-annealed)/CdS/TiO 2 /Pt photocathode achieves a photocurrent density of ca. -8.6 mA cm -2 at 0 V RHE , an onset potential of ca. 0.43 V RHE , a stable photocurrent for over 10 h, and a significant photoresponse up to the near-infrared region (ca. 1040 nm) in near-neutral pH buffered solution (pH 6.5) under AM 1.5G simulated sunlight. The obtained photoelectrochemical performance is attributed to the reliable synthesis of a micrometer-sized Sb 2 Se 3 (Se-annealed) thin film as photoabsorber and the successful construction of an appropriate p-n heterojunction at the electrode-liquid interface for effective charge separation. The demonstration of a low-band-gap and high-performance Sb 2 Se 3 photocathode with facile fabrication might facilitate the development of cost-effective PEC devices for wide solar-spectrum utilization.

Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha

2015-06-24

In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin filmmore » solar cells.« less

Mixed Electrical–Chemical Synapses in Adult Rat Hippocampus are Primarily Glutamatergic and Coupled by Connexin-36

PubMed Central

Hamzei-Sichani, Farid; Davidson, Kimberly G. V.; Yasumura, Thomas; Janssen, William G. M.; Wearne, Susan L.; Hof, Patrick R.; Traub, Roger D.; Gutiérrez, Rafael; Ottersen, Ole P.; Rash, John E.

2012-01-01

Dendrodendritic electrical signaling via gap junctions is now an accepted feature of neuronal communication in mammalian brain, whereas axodendritic and axosomatic gap junctions have rarely been described. We present ultrastructural, immunocytochemical, and dye-coupling evidence for “mixed” (electrical/chemical) synapses on both principal cells and interneurons in adult rat hippocampus. Thin-section electron microscopic images of small gap junction-like appositions were found at mossy fiber (MF) terminals on thorny excrescences of CA3 pyramidal neurons (CA3pyr), apparently forming glutamatergic mixed synapses. Lucifer Yellow injected into weakly fixed CA3pyr was detected in MF axons that contacted four injected CA3pyr, supporting gap junction-mediated coupling between those two types of principal cells. Freeze-fracture replica immunogold labeling revealed diverse sizes and morphologies of connexin-36-containing gap junctions throughout hippocampus. Of 20 immunogold-labeled gap junctions, seven were large (328–1140 connexons), three of which were consistent with electrical synapses between interneurons; but nine were at axon terminal synapses, three of which were immediately adjacent to distinctive glutamate receptor-containing postsynaptic densities, forming mixed glutamatergic synapses. Four others were adjacent to small clusters of immunogold-labeled 10-nm E-face intramembrane particles, apparently representing extrasynaptic glutamate receptor particles. Gap junctions also were on spines in stratum lucidum, stratum oriens, dentate gyrus, and hilus, on both interneurons and unidentified neurons. In addition, one putative GABAergic mixed synapse was found in thin-section images of a CA3pyr, but none were found by immunogold labeling, suggesting the rarity of GABAergic mixed synapses. Cx36-containing gap junctions throughout hippocampus suggest the possibility of reciprocal modulation of electrical and chemical signals in diverse hippocampal neurons. PMID:22615687

Praseodymium - A Competent Dopant for Luminescent Downshifting and Photocatalysis in ZnO Thin Films

NASA Astrophysics Data System (ADS)

Narayanan, Nripasree; Deepak, N. K.

2018-05-01

Highly transparent and conducting Zinc oxide (ZnO) thin films doped with Praseodymium (Pr) were deposited on glass substrates by using the spray pyrolysis method. The X-ray diffraction (XRD) analysis revealed the polycrystallinity of the deposited films with a hexagonal wurtzite structure, whereas the energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the incorporation of Pr in the films. The optical energy gap decreased by Pr doping due to the merging of the conduction band with the impurity bands formed within the forbidden gap. The room temperature photoluminescence spectra of the Pr-doped film showed enhancement of visible emission, suggesting efficient luminescent downshifting. The photocatalytic activity of the Pr-doped films is higher than that of undoped films due to the effective suppression of the rapid recombination of the photo-generated electron-hole pairs. The impurity levels formed within the forbidden gap act as efficient luminescent centers and electron traps, which lead to luminescent downshifting and enhanced photocatalytic activity.

Correlation of film thickness to optical band gap of Sol-gel derived Ba0.9Gd0.1TiO3 thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Teh, Yen Chin; Saif, Ala'eddin A.; Azhar Zahid Jamal, Zul; Poopalan, Prabakaran

2017-11-01

Ba0.9Gd0.1TiO3 thin films have been fabricated on SiO2/Si and fused silica by sol-gel method. The films are prepared through a spin coating process and annealed at 900 °C to obtain crystallized films. The effect of film thickness on the microstructure and optical band gap has been investigated using X-ray diffractometer, atomic force microscope and ultraviolet-visible spectroscopy, respectively. XRD patterns confirm that the films crystallized with tetragonal phase perovskite structure. The films surface morphology is analysed through amplitude parameter analysis to find out that the grain size and surface roughness are increased with the increase of films thickness. The transmittance and absorbance spectra reveal that all films exhibit high absorption in UV region. The evaluated optical band gap is obtained in the range of 3.67 - 3.78 eV and is found to be decreased as the thickness increase.

Lumped element kinetic inductance detectors based on two-gap MgB2 thin films

NASA Astrophysics Data System (ADS)

Yang, C.; Niu, R. R.; Guo, Z. S.; Cai, X. W.; Chu, H. M.; Yang, K.; Wang, Y.; Feng, Q. R.; Gan, Z. Z.

2018-01-01

Lumped element kinetic inductance detectors (LEKIDs) are made from a single layer superconducting thin film. Because of their low noise and highly multiplexibility, LEKIDs provide a sensitive technology for the detection of millimeter and submillimeter waves. In this work, a 5-pixel 50-nm-thick MgB2 array is made. The microwave properties of the array are measured under dark conditions. We show that the loaded quality factor Q of the resonant circuit is 30 000 at 7.5 K, which is comparable to that of lower-operating-temperature (usually several hundred mK) LEKIDs made from superconductors such as Al and Nb. Moreover, the temperature dependence of resonance frequency gives the two-gap character of MgB2, Δπ (0) = 2.58 meV and Δσ (0) = 8.26 meV. The gap frequency (f = 2Δ/h) indicates that MgB2 LEKIDs have a promising application on terahertz detection.

Low-frequency (1/f) noise in nanocrystal field-effect transistors.

PubMed

Lai, Yuming; Li, Haipeng; Kim, David K; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2014-09-23

We investigate the origins and magnitude of low-frequency noise in high-mobility nanocrystal field-effect transistors and show the noise is of 1/f-type. Sub-band gap states, in particular, those introduced by nanocrystal surfaces, have a significant influence on the 1/f noise. By engineering the device geometry and passivating nanocrystal surfaces, we show that in the linear and saturation regimes the 1/f noise obeys Hooge's model of mobility fluctuations, consistent with transport of a high density of accumulated carriers in extended electronic states of the NC thin films. In the subthreshold regime, the Fermi energy moves deeper into the mobility gap and sub-band gap trap states give rise to a transition to noise dominated by carrier number fluctuations as described in McWhorter's model. CdSe nanocrystal field-effect transistors have a Hooge parameter of 3 × 10(-2), comparable to other solution-deposited, thin-film devices, promising high-performance, low-cost, low-noise integrated circuitry.

Zn1-xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

NASA Astrophysics Data System (ADS)

AlHammad, M. S.

2017-05-01

We have synthesized undoped zinc oxide (ZnO) and Cu2O doped Zn1-XAlXO (AZO; Al/Zn = 1.5 at.%) metal oxide films by sol-gel spin coating method. Atomic force microscopy results indicate that the Zn1-xAlxO:Cu2O is are formed form the fibers. The surface morphology of the films is found to depend on the concentration of Cu2O. The optical constants such as band gap, Urbach energy, refractive index, extinction coefficient and dielectric constants of the films were determined. The transmittance spectra shows that all the films are highly transparent. The study revealed that undoped ZnO film has direct bang gap of 3.29 eV and the optical band gap of films is increased with doping content. The hot probe measurements indicate that Zn1-xAlxO:Cu2O transparent metal oxide composite thin films exhibited p-type electrical conductivity.

Ellipsometric analysis and optical absorption characterization of gallium phosphide nanoparticulate thin film

NASA Astrophysics Data System (ADS)

Zhang, Qi-Xian; Wei, Wen-Sheng; Ruan, Fang-Ping

2011-04-01

Gallium phosphide (GaP) nanoparticulate thin films were easily fabricated by colloidal suspension deposition via GaP nanoparticles dispersed in N,N-dimethylformamide. The microstructure of the film was performed by x-ray diffraction, high resolution transmission electron microscopy and field emission scanning electron microscopy. The film was further investigated by spectroscopic ellipsometry. After the model GaP+void|SiO2 was built and an effective medium approximation was adopted, the values of the refractive index n and the extinction coefficient k were calculated for the energy range of 0.75 eV-4.0 eV using the dispersion formula in DeltaPsi2 software. The absorption coefficient of the film was calculated from its k and its energy gaps were further estimated according to the Tauc equation, which were further verified by its fluorescence spectrum measurement. The structure and optical absorption properties of the nanoparticulate films are promising for their potential applications in hybrid solar cells.

Band gap scaling laws in group IV nanotubes.

PubMed

Wang, Chongze; Fu, Xiaonan; Guo, Yangyang; Guo, Zhengxiao; Xia, Congxin; Jia, Yu

2017-03-17

By using the first-principles calculations, the band gap properties of nanotubes formed by group IV elements have been investigated systemically. Our results reveal that for armchair nanotubes, the energy gaps at K points in the Brillouin zone decrease as 1/r scaling law with the radii (r) increasing, while they are scaled by -1/r 2  + C at Γ points, here, C is a constant. Further studies show that such scaling law of K points is independent of both the chiral vector and the type of elements. Therefore, the band gaps of nanotubes for a given radius can be determined by these scaling laws easily. Interestingly, we also predict the existence of indirect band gap for both germanium and tin nanotubes. Our new findings provide an efficient way to determine the band gaps of group IV element nanotubes by knowing the radii, as well as to facilitate the design of functional nanodevices.

Landau-level spectroscopy of massive Dirac fermions in single-crystalline ZrTe5 thin flakes

NASA Astrophysics Data System (ADS)

Jiang, Y.; Dun, Z. L.; Zhou, H. D.; Lu, Z.; Chen, K.-W.; Moon, S.; Besara, T.; Siegrist, T. M.; Baumbach, R. E.; Smirnov, D.; Jiang, Z.

2017-07-01

We report infrared magnetospectroscopy studies on thin crystals of an emerging Dirac material ZrTe5 near the intrinsic limit. The observed structure of the Landau-level transitions and zero-field infrared absorption indicate a two-dimensional Dirac-like electronic structure, similar to that in graphene but with a small relativistic mass corresponding to a 9.4-meV energy gap. Measurements with circularly polarized light reveal a significant electron-hole asymmetry, which leads to splitting of the Landau-level transitions at high magnetic fields. Our model, based on the Bernevig-Hughes-Zhang effective Hamiltonian, quantitatively explains all observed transitions, determining the values of the Fermi velocity, Dirac mass (or gap), electron-hole asymmetry, and electron and hole g factors.

Small-strip Thin Gap Chambers for the muon spectrometer upgrade of the ATLAS experiment

NASA Astrophysics Data System (ADS)

Perez Codina, E.; ATLAS Muon Collaboration

2016-07-01

The ATLAS muon system upgrade to be installed during the LHC long shutdown in 2018/19, the so-called New Small Wheel (NSW), is designed to cope with the increased instantaneous luminosity in LHC Run 3. The small-strip Thin Gap Chambers (sTGC) will provide the NSW with a fast trigger and high precision tracking. The construction protocol has been validated by test beam experiments on a full-size prototype sTGC detector, showing the performance requirements are met. The intrinsic spatial resolution for a single layer has been found to be about 45 μm for a perpendicular incident angle, and the transition region between pads has been measured to be about 4 mm.

Atomic-scale observation of structural and electronic orders in the layered compound α-RuCl3

NASA Astrophysics Data System (ADS)

Ziatdinov, M.; Banerjee, A.; Maksov, A.; Berlijn, T.; Zhou, W.; Cao, H. B.; Yan, J.-Q.; Bridges, C. A.; Mandrus, D. G.; Nagler, S. E.; Baddorf, A. P.; Kalinin, S. V.

2016-12-01

A pseudospin-1/2 Mott phase on a honeycomb lattice is proposed to host the celebrated two-dimensional Kitaev model which has an elusive quantum spin liquid ground state, and fascinating physics relevant to the development of future templates towards topological quantum bits. Here we report a comprehensive, atomically resolved real-space study by scanning transmission electron and scanning tunnelling microscopies on a novel layered material displaying Kitaev physics, α-RuCl3. Our local crystallography analysis reveals considerable variations in the geometry of the ligand sublattice in thin films of α-RuCl3 that opens a way to realization of a spatially inhomogeneous magnetic ground state at the nanometre length scale. Using scanning tunnelling techniques, we observe the electronic energy gap of ~0.25 eV and intra-unit cell symmetry breaking of charge distribution in individual α-RuCl3 surface layer. The corresponding charge-ordered pattern has a fine structure associated with two different types of charge disproportionation at Cl-terminated surface.

Using gapped topological surface states of Bi 2Se 3 films in a field effect transistor

DOE PAGES

Sun, Jifeng; Singh, David J.

2017-02-08

Three dimensional topological insulators are insulators with topologically protected surface states that can have a high band velocity and high mobility at room temperature. This then suggests electronic applications that exploit these surface states, but the lack of a band gap poses a fundamental difficulty. We report a first principles study based on density functional theory for thin Bi 2Se 3 films in the context of a field effect transistor. It is known that a gap is induced in thin layers due to hybridization between the top and bottom surfaces, but it is not known whether it is possible tomore » use the topological states in this type of configuration. In particular, it is unclear whether the benefits of topological protection can be retained to a sufficient degree. We also show that there is a thickness regime in which the small gap induced by hybridization between the two surfaces is sufficient to obtain transistor operation at room temperature, and furthermore, that the band velocity and spin texture that are important for the mobility are preserved for Fermi levels of relevance to device application.« less

Optical band gaps of organic semiconductor materials

NASA Astrophysics Data System (ADS)

Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

2016-08-01

UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

NASA Astrophysics Data System (ADS)

Ahmad, Shabir; Asokan, K.; Shahid Khan, Mohd.; Zulfequar, M.

2015-12-01

The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga10Se85Sn5 thin films with a thickness of ∼300 nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV-vis-spectrophotometer in the wavelength range of 200-1100 nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n0, oscillator strength Ed, zero frequency dielectric constant ε0, optical conductivity σoptical and the dissipation factor increases after irradiation, while the single oscillator energy Eo decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

NASA Astrophysics Data System (ADS)

Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

2017-04-01

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

Photoactive lead oxide thin films by spray pyrolysis

NASA Astrophysics Data System (ADS)

Bhagat, Dharini; Waldiya, Manmohansingh; Mukhopadhyay, Indrajit

2018-05-01

We report the synthesis of photoactive lead monoxide thin films on fluorine doped tin oxide substrate by cost effective spray pyrolysis technique using aqueous solution of lead acetate trihydrate. Influence of substrate temperature on the structural and optical properties of thin films was studied. Polymorph of lead monoxide, litharge (α-PbO), was obtained when the substrate temperature was kept constant at 360 °C. XRD analysis revealed that the deposits were tetragonal structured with preferred orientation along 002 plane. Band gap value was found to be 1.93ev from diffuse reflectance spectra.

Optimization of high quality Cu2ZnSnS4 thin film by low cost and environment friendly sol-gel technique for thin film solar cells applications

NASA Astrophysics Data System (ADS)

Chaudhari, J. J.; Joshi, U. S.

2018-05-01

In this study kesterite Cu2ZnSnS4 (CZTS) thin films suitable for absorber layer in thin film solar cells (TFSCs) were successfully fabricated on glass substrate by sol-gel method. The effects of complexing agent on formation of CZTS thin films have been investigated. X-ray diffraction (XRD) analysis confirms formation of polycrystalline CZTS thin films with single phase kesterite structure. XRD and Raman spectroscopy analysis of CZTS thin films with optimized concentration of complexing agent confirmed formation of kesterite phase in CZTS thin films. The direct optical band gap energy of CZTS thin films is found to decrease from 1.82 to 1.50 eV with increase of concentration of complexing agent triethanolamine. Morphological analysis of CZTS thin films shows smooth, uniform and densely packed CZTS grains and increase in the grain size with increase of concentration of complexing agent. Hall measurements revealed that concentration of charge carrier increases and resistivity decreases in CZTS thin films as amount of complexing agent increases.

Fabrication of DC inorganic electroluminescent thin-film devices with novel n-p-n type structure

NASA Astrophysics Data System (ADS)

Ishimura, Takuyoshi; Matsumoto, Hironaga

2014-04-01

Inorganic electroluminescent (iEL) thin films are used in light-emitting devices and are functional under alternating current conditions only. Stable luminescent light has yet to be obtained under direct current conditions. We postulated that thin-film iEL light emission occurs when an injected electron occupies the excited state of a luminescent center and then recombines radiatively. From this perspective, we fabricated a novel stacked n-p-n type thin-film iEL device composed of indium tin oxide (ITO)-ZnO-CuAlO2-ZnS-ZnS:TbF3-Al thin films and obtained stable luminescence using a low-voltage DC power supply. The overall luminescent color of the device depended on only the dopant in the luminescent layer, not the band gap or thin-film material.

III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

NASA Astrophysics Data System (ADS)

Huang, Cheng-Ying

As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing BTBT leakage. With further replacement of raised InGaAs spacers by recessed, doping-graded InP spacers at high field regions, BTBT leakage can be reduced ~100:1. Using the above-mentioned techniques, record high performance InAs MOSFETs with a 2.7 nm InAs channel and a ZrO2 gate dielectric were demonstrated with Ion = 500 microA/microm at Ioff = 100 nA/microm and VDS =0.5 V, showing the highest on-state performance among all the III-V MOSFETs and comparable performance to 22 nm Si FinFETs. Record low leakage InGaAs MOSFETs with recessed InP source/drain spacers were also demonstrated with minimum I off = 60 pA/microm at 30 nm-Lg , and Ion = 150 microA/microm at I off = 1 nA/microm and VDS =0.5 V. This recessed InP source/drain spacer technique improves device scalability and enables III-V MOSFETs for low standby power logic applications. Furthermore, ultra-thin InAs channel MOSFETs were fabricated on Si substrates, exhibiting high yield and high transconductance gm ~2.0 mS/microm at 20 nm- Lg and VDS =0.5 V. With further scaling of gate lengths, a 12 nm-Lg III-V MOSFET has shown maximum Ion/Ioff ratio ~8.3x105 , confirming that III-V MOSFETs are scalable to sub-10-nm technology nodes.

Application Of Positron Beams For The Characterization Of Nano-scale Pores In Thin Films

NASA Astrophysics Data System (ADS)

Hirata, K.; Ito, K.; Kobayashi, Y.; Suzuki, R.; Ohdaira, T.; Eijt, S. W. H.; Schut, H.; van Veen, A.

2003-08-01

We applied three positron annihilation techniques, positron 3γ-annihilation spectroscopy, positron annihilation lifetime spectroscopy, and angular correlation of annihilation radiation, to the characterization of nano-scale pores in thin films by combining them with variable-energy positron beams. Characterization of pores in thin films is an important part of the research on various thin films of industrial importance. The results of our recent studies on pore characterization of thin films by positron beams will be reported here.

[Object-oriented segmentation and classification of forest gap based on QuickBird remote sensing image.

PubMed

Mao, Xue Gang; Du, Zi Han; Liu, Jia Qian; Chen, Shu Xin; Hou, Ji Yu

2018-01-01

Traditional field investigation and artificial interpretation could not satisfy the need of forest gaps extraction at regional scale. High spatial resolution remote sensing image provides the possibility for regional forest gaps extraction. In this study, we used object-oriented classification method to segment and classify forest gaps based on QuickBird high resolution optical remote sensing image in Jiangle National Forestry Farm of Fujian Province. In the process of object-oriented classification, 10 scales (10-100, with a step length of 10) were adopted to segment QuickBird remote sensing image; and the intersection area of reference object (RA or ) and intersection area of segmented object (RA os ) were adopted to evaluate the segmentation result at each scale. For segmentation result at each scale, 16 spectral characteristics and support vector machine classifier (SVM) were further used to classify forest gaps, non-forest gaps and others. The results showed that the optimal segmentation scale was 40 when RA or was equal to RA os . The accuracy difference between the maximum and minimum at different segmentation scales was 22%. At optimal scale, the overall classification accuracy was 88% (Kappa=0.82) based on SVM classifier. Combining high resolution remote sensing image data with object-oriented classification method could replace the traditional field investigation and artificial interpretation method to identify and classify forest gaps at regional scale.

Photocatalytic efficiency of CdS film synthesized by CBD method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishiyama, T.; Sato, Y.; Jeyadevan, B.

2006-05-15

Cadmium Sulfide semiconductor has comparatively small band gap and act as photocatalyst under irradiation of visible light. For practical use, it is convenient to fix the photocatalyst on a substrate as a thin film. In this study, we prepared CdS thin film on Ti substrate by Chemical Bath Deposition (CBD). To improve photocatalytic activity, CdS film was annealed and optimum thickness was investigated.

Effect of external magnetic field on the crystal growth of nano-structured Zn xMn 1- x+ yZr yFe 2-2 yO 4 thin films

NASA Astrophysics Data System (ADS)

Anjum, Safia; Rafique, M. S.; Khaleeq-ur-Rahaman, M.; Siraj, K.; Usman, Arslan; Ahsan, A.; Naseem, S.; Khan, K.

2011-06-01

Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 and Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films with different concentrations of Mn and Zr have been deposited on single crystal n-Si (400) at room temperature (RT) by pulse laser deposition technique (PLD). The films have been deposited under two conditions: (i) with the applied external magnetic field across the propagation of the plume (ii) without applied external magnetic field ( B=0). XRD results show the films have spinel cubic structure when deposited in the presence of magnetic field. SEM and AFM observations clearly show the effect of external applied magnetic field on the growth of films in terms of small particle size, improved uniformity and lower r.m.s. roughness. Thin films deposited under the influence of external magnetic field exhibit higher magnetization as measured by the VSM. The optical band gap energy Eg, refractive index n, reflection, absorption and the thickness of the thin films were measured by spectroscopy ellipsometer. The reflection of Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films is higher than Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 thin films due to the greater concentration of Zr. The thicknesses of the thin films under the influence of external magnetic field are larger than the films grown without field for both samples. The optical band gap energy Eg decreases with increasing film thickness. The films with external magnetic field are found highly absorbing in nature due to the larger film thickness.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bourlier, Yoan; Cristini Robbe, Odile; Laboratoire de Physique des Lasers, Atomes et Molécules

Highlights: • CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S{sub 2} chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layersmore » using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn{sub (1−x)}Ga{sub x}S{sub 2,} clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4.« less

CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

NASA Astrophysics Data System (ADS)

Davidson, Bradley Darren

This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different WALD fabrication technologies two generations of 2-terminal WALD NEMS switches have been developed. These devices have functional gap heights of 30-50 nm, and actuation voltages typically ranging from 3--5 Volts. Via the extension of a two terminal WALD technology novel 3-terminal WALD NEMS devices were developed. These devices have actuation voltages ranging from 1.5--3 Volts, reliabilities in excess of 2 million cycles, and have been designed to be the fundamental building blocks for WALD NEMS complementary inverters. Through the development of these devices several advancements in the modeling and design of thin-film NEMS devices were achieved. A new model was developed to better characterize pre-actuation currents commonly measured for NEMS switches with nano-scale gate-to-source gap heights. The developed model is an extension of the standard field-emission model and considers the electromechanical response, and electric field effects specific to thin-film NEMS switches. Finally, a multi-physics FEM/FD based model was developed to simulate the dynamic behavior of 2 or 3-terminal electrostatically actuated devices whose electrostatic domains have an aspect ratio on the order of 10-3. The model uses a faux-Lagrangian finite difference method to solve Laplaces equation in a quasi-statatically deforming domain. This model allows for the numerical characterization and design of thin-film NEMS devices not feasible using typical non-specialized BEM/FEM based software. Using this model several novel and feasible designs for fixed-fixed 3-terminal WALD NEMS switches capable for the construction of complementary inverters were discovered.

Far-Infrared Optical Conductivity Gap in Superconducting MgB2 Films

NASA Astrophysics Data System (ADS)

Kaindl, Robert A.; Carnahan, Marc A.; Orenstein, Joseph; Chemla, Daniel S.; Christen, Hans M.; Zhai, Hong-Ying; Paranthaman, Mariappan; Lowndes, Doug H.

2002-01-01

We report the first study of the optical conductivity of MgB 2 covering the range of its lowest-energy superconducting gap. Terahertz time-domain spectroscopy is utilized to determine the complex, frequency-dependent conductivity σ(ω) of thin films. The imaginary part reveals an inductive response due to the emergence of the superconducting condensate. The real part exhibits a strong depletion of oscillator strength near 5 meV resulting from the opening of a superconducting energy gap. The gap ratio of 2Δ0/kBTC~1.9 is well below the weak-coupling value, pointing to complex behavior in this novel superconductor.

Effects of silvicultultural modifications of temperate rainforest on breeding and wintering bird communities, Prince of Wales Island, southeast Alaska

USGS Publications Warehouse

Dellasala, Dominick A.; Hagar, Joan C.; Engel, Kathleen A.; McComb, W.C.; Fairbanks, Randal L.; Campbell, Ellen G.

1996-01-01

We inventoried breeding and wintering bird communities in four treatments of temperate rainforest on Prince of Wales Island, southeast Alaska during 1991-1992 and 1992-1993. The four forest treatments sampled included: (1) young growth (20 years) originating from clearcut logging with no silvicultural modification (non-modified), (2) young growth (20 years) precommercially thinned along uniformly-spaced thinning grids (thinned), (3) young growth (20 years) with gaps in the overstory canopy created by felling trees in 0.05-ha openings (gapped), and (4) virgin old growth (2 150 years). Of 16 common breeding bird species observed, six showed significant responses to young-growth modifications. One species was more abundant and two species were less abundant in thinned sites, while one species was more abundant and two species were less abundant in gapped sites than at least one of the other treatments. None of the three common wintering species of birds observed was influenced by young-growth modification. Breeding bird communities, in general, were less similar between young- and old-growth treatments than among young-growth treatments. Three of the 16 common breeding bird species were more abundant in old growth than each of the young-growth treatments and one uncommon species was detected almost exclusivelyi n old growth duringb oth the breedinga nd wintering seasonsF. our other breeding bird species were more abundant in young-growth treatments than in old growth. Higher use of old growth by wintering birds was related to winter severity. To enhance habitat for wintering and breeding birds we recommend: (1) thinning young growth along variablespaced grids to create additional canopy layers and improve snow-intercept properties of young growth for canopy-foraging birds, (2) retention of old-growth clumps in clearcuts for bird species associated with old-growth structure, and (3) long-term conservation of oldgrowth temperate rainforest for breeding and wintering birds positively associated with old growth.

Modelling and attenuation feasibility of the aeroelastic response of active helicopter rotor systems during the engagement/disengagement phase of maritime operation

NASA Astrophysics Data System (ADS)

Khouli, F.

An aeroelastic phenomenon, known as blade sailing, encountered during maritime operation of helicopters is identified as being a factor that limits the tactical flexibility of helicopter operation in some sea conditions. The hazards associated with this phenomenon and its complexity, owing to the number of factors contributing to its occurrence, led previous investigators to conclude that advanced and validated simulation tools are best suited to investigate it. A research gap is identified in terms of scaled experimental investigation of this phenomenon and practical engineering solutions to alleviate its negative impact on maritime helicopter operation. The feasibility of a proposed strategy to alleviate it required addressing a gap in modelling thin-walled composite active beams/rotor blades. The modelling is performed by extending a mathematically-consistent and asymptotic reduction strategy of the 3-D elastic problem to account for embedded active materials. The derived active cross-sectional theory is validated using 2-D finite element results for closed and open cross-sections. The geometrically-exact intrinsic formulation of active maritime rotor systems is demonstrated to yield compact and symbolic governing equations. The intrinsic feature is shown to allow a classical and proven solution scheme to be successfully applied to obtain time history solutions. A Froude-scaled experimental rotor was designed, built, and tested in a scaled ship airwake environment and representative ship motion. Based on experimental and simulations data, conclusions are drawn regarding the influence of the maritime operation environment and the rotor operation parameters on the blade sailing phenomenon. The experimental data is also used to successfully validate the developed simulation tools. The feasibility of an open-loop control strategy based on the integral active twist concept to counter blade sailing is established in a Mach-scaled maritime operation environment. Recommendations are proposed to improve the strategy and further establish its validity in a full-scale maritime operation environment.

Effects of oxygen partial pressure, deposition temperature, and annealing on the optical response of CdS:O thin films as studied by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Junda, Maxwell M.; Grice, Corey R.; Subedi, Indra; Yan, Yanfa; Podraza, Nikolas J.

2016-07-01

Ex-situ spectroscopic ellipsometry measurements are made on radio frequency magnetron sputtered oxygenated cadmium sulfide (CdS:O) thin films. Films are deposited onto glass substrates at room temperature and at 270 °C with varying oxygen to total gas flow ratios in the sputtering ambient. Ellipsometric spectra from 0.74 to 5.89 eV are collected before and after annealing at 607 °C to simulate the thermal processes during close-space sublimation of overlying cadmium telluride in that solar cell configuration. Complex dielectric function (ɛ = ɛ1 + iɛ2) spectra are extracted for films as a function of oxygen gas flow ratio, deposition temperature, and post-deposition annealing using a parametric model accounting for critical point transitions and an Urbach tail for sub-band gap absorption. The results suggest an inverse relationship between degree of crystallinity and oxygen gas flow ratio, whereas annealing is shown to increase crystallinity in all samples. Direct band gap energies are determined from the parametric modeling of ɛ and linear extrapolations of the square of the absorption coefficient. As-deposited samples feature a range of band gap energies whereas annealing is shown to result in gap energies ranging only from 2.40 to 2.45 eV, which is close to typical band gaps for pure cadmium sulfide.

Growth of 2D Materials and Application in Electrochemical Energy Conversion

NASA Astrophysics Data System (ADS)

Ye, Gonglan

The discovery of graphene in 2004 has generated numerous interests among scientists for graphene's versatile potentials. The enthusiasm for graphene has recently been extended to other members of two-dimensional (2D) materials for applications in electronics, optoelectronics, and catalysis. Different from graphene, atomically-thin transition metal dichalcogenides (TMDs) have varied band gaps and would benefit for applications in the semiconductor industry. One of the promising applications of 2D TMDs is for 2D integrated circuits to replace current Si based electronics. In addition to electronic applications, 2D materials are also good candidates for electrochemical energy storage and conversion due to their large surface area and atomic thickness. This thesis mainly focuses on the synthesis of 2D materials and their application in energy conversion. Firstly, we focus on the synthesis of two-dimensional Tin Disulfide (SnS2). SnS2 is considered to be a novel material in 2D family. 2D SnS2 has a large band gap ( 2.8 eV) and high carrier mobility, which makes it a potential applicant for electronics. Monolayer SnS2 with large scale and high crystal quality was successfully synthesized by chemical vapor deposition (CVD), and its performance as a photodetector was examined. The next chapter demonstrated a generic method for growing millimeter-scale single crystals as well as wafer-scale thin films of TMDs. This generic method was obtained by studying the precursors' behavior and the flow dynamics during the CVD process of growing MoSe2, and was extended to other TMD layers such as millimeter-scale WSe2 single crystals. Understanding the growth processes of high quality large area monolayers of TMDs is crucial for further fundamental research as well as future development for scalable complex electronics. Besides the synthesis of 2D materials with high qualities, we further explored the relationship between defects and electrochemical properties. By directly observing and correlating the microscale structural changes of TMD monolayers such as MoS2 to the catalytic properties, we were able to provide insight on the fundamental catalytic mechanism for hydrogen evolution reaction. Finally, we used the 2D materials to build up 3D architectures, showing excellent performance in energy storage and conversion. For example, we used graphene as a conductive scaffold to support vanadium oxide (V 2O5) on nanoscale, and achieved high performances for supercapacitors. Also, we applied the Pt anchored N-doped graphene nanoribbons as the catalyst for methanol electro oxidation, and reported the best performance among Pt/Carbon-based catalysts.

Antimicrobial effect of TiO2 doped with Ag and Cu on Escherichia coli and Pseudomonas putida

NASA Astrophysics Data System (ADS)

Angelov, O.; Stoyanova, D.; Ivanova, I.

2016-10-01

Antimicrobial effect of TiO2 doped with Ag and Cu on Gram-negative bacteria Escherichia coli and Pseudomonas putida is studied. The thin films are deposited on glass substrates without heating during the deposition by r.f. magnetron co-sputtering of TiO2 target and pieces of Ag and Cu. The studied films, thickness about 65 nm, were as deposited and annealed (5200C, 4h, N2+5%H2, 4Pa). The as deposited thin films TiO2:Ag:Cu have band gap energy of 3.56 eV little higher than the band gap of crystalline anatase TiO2 which can be explained with the quantum effect of the granular structure of r.f. magnetron sputtered films. The annealed samples have band gap of 2.52 eV due to formation of donor levels from Ag and Cu atoms near the bottom of the conduction band. The toxic effect was determined through the classical Koch's method and the optical density measurements at λ=610 nm. The as deposited TiO2:Ag:Cu thin films demonstrate stronger inhibition effect - bactericidal for P. putida and bacteriostatic for E. coli (up to the 6th hour) in comparison with the annealed samples. The both methods of study show the same trends of the bacterial growth independently of their different sensitivity which confirms the observed effect.

Band-gap narrowing and magnetic behavior of Ni-doped Ba(Ti0.875Ce0.125)O3 thin films

NASA Astrophysics Data System (ADS)

Zhou, Wenliang; Deng, Hongmei; Yu, Lu; Yang, Pingxiong; Chu, Junhao

2015-11-01

Band-gap narrowing and magnetic effects have been observed in a Ni-doped Ba(Ti0.875Ce0.125)O3 (BTC) thin film. Structural characterizations and microstructural analysis show that the as-prepared Ba(Ti0.75Ce0.125Ni0.125)O3-δ (BTCN) thin film exhibits a cubic perovskite structure with an average grain size of 25 nm. The Ce doping at the Ti-site results in an increasing perovskite volume to favour an O-vacancy-stabilized Ni2+ substitution. Raman spectroscopy, however, shows the cubic symmetry of crystalline structures is locally lowered by the presence of dopants, significantly deviating from the ideal Pm3m space group. Moreover, BTCN presents a narrowed band-gap, much smaller than that of BaTiO3 and BTC, due to new states of both the highest occupied molecular orbital and the lowest unoccupied molecular orbital in an electronic structure with the presence of Ni. Also, magnetic enhancement driven by co-doping has been confirmed in the films, which mainly stems from the exchange interaction of Ni2+ ions via an electron trapped in a bridging oxygen vacancy. These findings may open an avenue to discover and design optimal perovskite compounds for solar-energy devices and information storage.

Influence of processing conditions on the optical properties of chemically deposited zinc sulphide (ZnS) thin film

NASA Astrophysics Data System (ADS)

Igweoko, A. E.; Augustine, C.; Idenyi, N. E.; Okorie, B. A.; Anyaegbunam, F. N. C.

2018-03-01

In this paper, we present the influence of post deposition annealing and varying concentration on the optical properties of ZnS thin films fabricated by chemical bath deposition (CBD) at 65 °C from chemical baths comprising NH3/SC(NH2)2/ZnSO4 solutions at pH of about 10. The film samples were annealed at temperatures ranging from 373 K–473 K and the concentration of the film samples vary from 0.1 M–0.7 M. Post deposition annealing and concentration played an important role on the optical parameters investigated which includes absorbance, transmittance, reflectance, absorption coefficient, band gap, refractive index and extinction coefficient. The optical parameters were found to vary with post deposition annealing in one direction and concentration of Zn2+ in the reverse direction. For instance, post deposition annealing increases the band gap from 3.65 eV for as-deposited to 3.70 eV, 3.75 eV and 3.85 eV for annealed at 373 K, 423 K and 473 K respectively whereas concentration of Zn2+ decreases the band gap from 3.95 eV at 0.1 M to 3.90 eV, 3.85 eV and 3.80 eV at 0.3 M, 0.5 M and 0.7 M respectively. The fundamental absorption edge of ZnS thin films shifted toward the highest photon energies (blue shift) after annealing and shifted toward the lowest photon energies (red shift) with increasing Zn ions concentration. A linear relation between band gap energy and Urbach energy was found. After annealing, the Urbach energy increases form 3.10 eV to 3.50 eV and decreases from 3.40 eV to 3.10 eV at varying Zn2+ concentration. The property of wide band gap makes ZnS suitable for buffer layer of film solar cells, permitting more light especially the short wavelength light into absorber layer.

Ga/1-x/Al/x/As LED structures grown on GaP substrates.

NASA Technical Reports Server (NTRS)

Woodall, J. M.; Potemski, R. M.; Blum, S. E.; Lynch, R.

1972-01-01

Ga(1-x)Al(x)As light-emitting diode structures have been grown on GaP substrates by the liquid-phase-epitaxial method. In spite of the large differences in lattice constants and thermal-expansion coefficients, room-temperature efficiencies up to 5.5% in air have been observed for a peak emission of 8500 A. Using undoped GaP substrates, which are transparent to the infrared and red portions of the spectrum, thin structures of Ga(1-x)Al(x)As with large external efficiencies can now be made.

76 FR 35425 - Notice of Intent to Grant Partially Exclusive License of the United States Patent Application No...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-06-17

... like. For observation of the sample, embodiments provide a thin-membrane window etched in the center of... windows. This gap may be adjusted by employing spacers. Alternatively, the thickness of a film established... optimize resolution each window may have a thickness on the order of 50 nm and the gap may be on the order...

High-frequency Lamb wave device composed of MEMS structure using LiNbO3 thin film and air gap.

PubMed

Kadota, Michio; Ogami, Takashi; Yamamoto, Kansho; Tochishita, Hikari; Negoro, Yasuhiro

2010-11-01

High-frequency devices operating at 3 GHz or higher are required, for instance, for future 4th generation mobile phone systems in Japan. Using a substrate with a high acoustic velocity is one method to realize a high-frequency acoustic or elastic device. A Lamb wave has a high velocity when the substrate thickness is thin. To realize a high-frequency device operating at 3 GHz or higher using a Lamb wave, a very thin (less than 0.5 μm thick) single-crystal plate must be used. It is difficult to fabricate such a very thin single crystal plate. The authors have attempted to use a c-axis orientated epitaxial LiNbO(3) thin film deposited by a chemical vapor deposition system (CVD) instead of using a thin LiNbO(3) single crystal plate. Lamb wave resonators composed of a interdigital transducer (IDT)/the LiNbO(3) film/air gap/base substrate structure like micro-electromechanical system (MEMS) transducers were fabricated. These resonators have shown a high frequency of 4.5 and 6.3 GHz, which correspond to very high acoustic velocities of 14,000 and 12,500 m/s, respectively, have excellent characteristics such as a ratio of resonant and antiresonant impedance of 52 and 38 dB and a wide band of 7.2% and 3.7%, respectively, and do not have spurious responses caused by the 0th modes of shear horizontal (SH(0)) and symmetric (S(0)) modes.

A Nonparametric Framework for Comparing Trends and Gaps across Tests

ERIC Educational Resources Information Center

Ho, Andrew Dean

2009-01-01

Problems of scale typically arise when comparing test score trends, gaps, and gap trends across different tests. To overcome some of these difficulties, test score distributions on the same score scale can be represented by nonparametric graphs or statistics that are invariant under monotone scale transformations. This article motivates and then…

The Effects of ph on Structural and Optical Characterization of Iron Oxide Thin Films

NASA Astrophysics Data System (ADS)

Tezel, Fatma Meydaneri; Özdemir, Osman; Kariper, I. Afşin

In this study, the iron oxide thin films have been produced by chemical bath deposition (CBD) method as a function of pH onto amorphous glass substrates. The surface images of the films were investigated with scanning electron microscope (SEM). The crystal structures, orientation of crystallization, crystallite sizes, and dislocation density i.e. structural properties of the thin films were analyzed with X-ray diffraction (XRD). The optical band gap (Eg), optical transmission (T%), reflectivity (R%), absorption coefficient (α), refraction index (n), extinction coefficient (k) and dielectric constant (ɛ) of the thin films were investigated depending on pH, deposition time, solution temperature, substrate temperature, thickness of the films by UV-VIS spectrometer.

Electro-optical properties of the metal oxide-carbon thin film system of CdO-LCC

NASA Astrophysics Data System (ADS)

Kokshina, A. V.; Smirnov, A. V.; Razina, A. G.

2016-08-01

This article presents the results of a study electrical and optical properties of the thin film system of CdO-LCC. Cadmium oxide films were obtained by method of thermal oxidation. CdO-LCC thin film system was produced by applying on a CdO film a linear chain carbon film in thickness of 100 nm using the ion-plasma method, after which the obtained system was annealed. The studies showed that the obtained CdO-LCC films are quite transparent in the visible region; it has polycrystalline structure, thickness around 300 nm, the band gap to 2.3 eV. The obtained thin film system has photosensitive properties.

Influences of annealing temperature on sprayed CuFeO2 thin films

NASA Astrophysics Data System (ADS)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

A striking mobility improvement of C60 OFET by inserting diindenoperylene layer between C60 and SiO2 gate insulator

NASA Astrophysics Data System (ADS)

Yang, Jin-peng; Yonezawa, Keiichiro; Hinderhofer, Alexander; Bussolotti, Fabio; Kera, Satoshi; Ueno, Nobuo

2014-09-01

Gap states in organic semiconductors play a crucial role in determining Energy-Level Alignment and in many cases they act as charge trapping centers to result in serious lowering of charge mobility. Thus origin of gap states has gained increasing attention in order to realize higher mobility organic devises [1-4]. Bussolotti et al. have demonstrated recently that gap states in a pentacene thin film increase even by exposing the film to inert gas and confirmed that the gas exposure mediates structural defects in the film thus gap states [4]. The results have also indicated that preparation of highly-ordered organic thin film is necessary to improve the device performance, namely to decrease trapping states. To improve the ordering of molecule in the film, deposition of a template molecular underlayer is one of the simplest methods to increase the domain size of overlayer film and its crystallinity, and thus we expect improvement of the charge mobility [5]. Hinderhofer et al. reported recently that diindenoperylene (DIP; Figure 1a) could be used as a template layer to grow highly ordered and oriented C60 film with its (111) plane parallel to the SiO2 substrate [6]. Considering the hole mobility of DIP single crystal, which is quite low (~0.005 cm2 V-1S-1 at room temperature [7]), it is expected for the DIP template C60 thin film system that lower drain current would be achieved to improve the on/off ratios based on n type C60 transistor and its electron mobility (especially on the negative Vgs region, compared to PEN modified C60 transistors [8]).

Encapsulation of high temperature thermoelectric modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salvador, James R.; Sakamoto, Jeffrey; Park, Youngsam

A method of encapsulating a thermoelectric device and its associated thermoelectric elements in an inert atmosphere and a thermoelectric device fabricated by such method are described. These thermoelectric devices may be intended for use under conditions which would otherwise promote oxidation of the thermoelectric elements. The capsule is formed by securing a suitably-sized thin-walled strip of oxidation-resistant metal to the ceramic substrates which support the thermoelectric elements. The thin-walled metal strip is positioned to enclose the edges of the thermoelectric device and is secured to the substrates using gap-filling materials. The strip, substrates and gap-filling materials cooperatively encapsulate the thermoelectricmore » elements and exclude oxygen and water vapor from atmospheric air so that the elements may be maintained in an inert, non-oxidizing environment.« less

Sol-gel synthesis and optical properties of titanium dioxide thin film

NASA Astrophysics Data System (ADS)

Ullah, Irfan; Khattak, Shaukat Ali; Ahmad, Tanveer; Saman; Ludhi, Nayab Ali

2018-03-01

The titanium dioxide (TiO2) is synthesized by sol-gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.

Optical constants of wurtzite ZnS thin films determined by spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Ong, H. C.; Chang, R. P. H.

2001-11-01

The complex dielectric functions of wurtzite ZnS thin films grown on (0001) Al2O3 have been determined by using spectroscopic ellipsometry over the spectral range of 1.33-4.7 eV. Below the band gap, the refractive index n is found to follow the first-order Sellmeir dispersion relationship n2(λ)=1+2.22λ2/(λ2-0.0382). Strong and well-defined free excitonic features located above the band edge are clearly observed at room temperature. The intrinsic optical parameters of wurtzite ZnS such as band gaps and excitonic binding energies have been determined by fitting the absorption spectrum using a modified Elliott expression together with Lorentizan broadening. Both parameters are found to be larger than their zinc blende counterparts.

Growth and characterization of highly conducting Al-doped ZnO (AZO) thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Sardana, Sanjay K.; Singh, Anil; Srivastava, Sanjay K.; Pandya, Dinesh K.

2018-05-01

A comparative study of undoped ZnO and Al-doped ZnO (AZO) thin films deposited on glass substrate by spray pyrolysis has been carried out at various aqueous molar concentration of zinc acetate. The thin films deposited on glass shows the wurtzite phase of ZnO, confirmed by X-ray diffraction. The optical study shows the high transmittance over 80% in the visible regime. The band gap of AZO thin films shows a blue shift as compared to undoped ZnO, which has been attributed to Burstein-Moss shift. Heat treatment of these samples in vacuum showed the improved conductivity in compared to as-deposited thin films. The electric study shows the minimum resistivity of 8 x 10-3 Ω-cm and carrier concentration of 6.5 × 1019 /cm3 correspond to AZO thin films.

Low-Temperature Atomic Layer Deposition of CuSbS2 for Thin-Film Photovoltaics.

PubMed

Riha, Shannon C; Koegel, Alexandra A; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

2017-02-08

Copper antimony sulfide (CuSbS 2 ) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>10 4 cm -1 ), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm -1 , as well as a hole concentration of 10 15 cm -3 . Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2 /CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.

Next-generation all-silica coatings for UV applications

NASA Astrophysics Data System (ADS)

Melninkaitis, A.; Grinevičiūtė, L.; Abromavičius, G.; Mažulė, L.; Smalakys, L.; Pupka, E.; Š čiuka, M.; Buzelis, R.; Kičas, S.

2017-11-01

Band-gap and refractive index are known as fundamental properties determining intrinsic optical resistance of multilayer dielectric coatings. By considering this fact we propose novel approach to manufacturing of interference thin films, based on artificial nano-structures of modulated porosity embedded in high band-gap matrix. Next generation all-silica mirrors were prepared by GLancing Angle Deposition (GLAD) using electron beam evaporation. High reflectivity (HR) was achieved by tailoring the porosity of highly resistant silica material during the thin film deposition process. Furthermore, the proposed approach was also demonstrated to work well in case of anti-reflection (AR) coatings. Conventional HR HfO2 and SiO2 as well as AR Al2O3 and SiO2 multilayers produced by Ion Beam Sputtering (IBS) were used as reference coatings. Damage performance of experimental coatings was also analyzed. All-silica based GLAD approach resulted in significant improvement of intrinsic laser damage resistance properties if compared to conventional coatings. Besides laser damage testing, other characteristics of experimental coatings are analyzed and discussed - reflectance, surface roughness and optical scattering. We believe that reported concept can be expanded to virtually any design of thin film coatings thus opening a new way of next generation highly resistant thin films well suited for high power and UV laser applications.

Effects of gamma-ray irradiation on the optical properties of amorphous Se100-xHgx thin films

NASA Astrophysics Data System (ADS)

Ahmad, Shabir; Islam, Shama; Nasir, Mohd.; Asokan, K.; Zulfequar, M.

2018-06-01

In this study, the thermal quenching technique was employed to prepare bulk samples of Se100-xHgx (x = 0, 5, 10, 15). Thin films with a thickness of ∼250 nm were deposited on glass substrates using the thermal evaporation technique. These films were irradiated with gamma rays at doses of 25-100 kGy. The elemental compositions of the as-deposited thin films were confirmed by energy dispersive X-ray analysis and Rutherford backscattering spectrometry. X-ray diffraction analysis confirmed the crystalline nature of these thin films upto the dose of 75 kGy. Fourier transform-infrared spectroscopy showed that the concentration of defects decreased after gamma irradiation. Microstructural analysis by field emission scanning electron microscopy indicated that the grain size increases after irradiation. Optical study based on spectrophotometry showed that the optical band gap values of these films increase after the addition of Hg whereas they decrease after gamma irradiation. We found that the absorption coefficient increases with doses up to 75 kGy but decreases at higher doses. These remarkable shifts in the optical band gap and absorption coefficient values are interpreted in terms of the creation and annihilation of defects, which are the main effects produced by gamma irradiation.

Synthesis of Ag-Cu-Pd alloy thin films by DC-magnetron sputtering: Case study on microstructures and optical properties

NASA Astrophysics Data System (ADS)

Rezaee, Sahar; Ghobadi, Nader

2018-06-01

The present study aims to investigate optical properties of Ag-Cu-Pd alloy thin films synthesized by DC-magnetron sputtering method. The thin films are deposited on the glass and silicon substrates using Argon gas and Ag-Cu-Pd target. XRD analysis confirms the successful growth of Ag, Cu, and Pd NPs with FCC crystalline structure. Moreover, UV-visible absorption spectroscopy is applied to determine optical properties of the prepared samples which are affected by changes in surface morphology. The existence of single surface plasmon resonance (SPR) peak near 350 nm proves the formation of silver nanoparticles with a slight red shift through increasing deposition time. Ineffective thickness method (ITM) and Derivation of ineffective thickness method (DITM) are applied to extract optical band gap and transition type via absorption spectrum. SEM and AFM analyses show the distribution of near-spherical nanoparticles covering the surface of thin films. Furthermore, thickness variation affects the grain size. In addition, TEM image reveals the uniform size distribution of nanoparticles with an average particle size of about 15 nm. The findings show that increasing grain size and crystallite order along with the decrease of structural defect and disorders decrease optical band gap from 3.86 eV to 2.58 eV.

Enhanced dielectric and piezoelectric responses in Zn 1 -xMg xO thin films near the phase separation boundary

DOE PAGES

Kang, Xiaoyu; Shetty, Smitha; Garten, Lauren; ...

2017-01-23

Dielectric and piezoelectric properties for Zn 1-xMg xO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn 1-xMg xO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane ( d33,f) and in-plane ( e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectricmore » coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. As a result, the enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn 1-xMg xO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.« less

Characterization of bismuth selenide (Bi2Se3) thin films obtained by evaporating the hydrothermally synthesised nano-particles

NASA Astrophysics Data System (ADS)

Indirajith, R.; Rajalakshmi, M.; Gopalakrishnan, R.; Ramamurthi, K.

2016-03-01

Bismuth selenide (Bi2Se3) was synthesized by hydrothermal method at 200 °C and confirmed by powder X-ray diffraction (XRD) studies. The synthesized material was utilized to deposit bismuth selenide thin films at various substrate temperatures (Room Temperature-RT, 150 °C, 250 °C, 350 °C and 450 °C) by electron beam evaporation technique. XRD study confirmed the polycrystalline nature of the deposited Bi2Se3films. Optical transmittance spectra showed that the deposited (at RT) films acquire relatively high average transmittance of 60%in near infrared region (1500-2500 nm). An indirect allowed optical band gap calculated from the absorption edge for the deposited films is ranging from 0.62 to 0.8 eV. Scanning electron and atomic force microscopy analyses reveal the formation of nano-scale sized particles on the surface and that the nature of surface microstructures is influenced by the substrate temperature. Hall measurements showed improved electrical properties, for the films deposited at 350 °C which possess 2.8 times the mobility and 0.9 times the resistivity of the films deposited at RT.

Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babu, B. J.; Egaas, B.; Velumani, S.

Cu(In1-xGax)Se2 (CIGS) thin films with x=0 (CIS) and x=0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 degrees C, followed by selenization treatment at 550 degrees C in selenium environment under N2 gas flow. X-ray diffraction patterns of as-deposited CIGS layers on Mo showed polycrystalline chalcopyrite phase with an intense (112) plane. Splitting of (204)/(220) and (116)/(312) planes for the film with x=0.3 reveals deviation of tetragonal nature. Field emission scanning electron microscopy cross-sectional images of selenized films showed clear re-crystallization of grains. During the selenization process of the CIGSmore » absorber, a thin interface layer of MoSe2 is formed. Line mapping of Mo/CIGS layer showed more gallium segregation at the interface of back contact resulting in band gap grading. Chemical composition and mapping of the as-deposited and selenized samples were determined by energy dispersive analysis of X-rays. This work leads to fabrication of low cost and large scale Mo/CIGS/CdS/ZnO/ZnO:Al device structure.« less

Direct band gap measurement of Cu(In,Ga)(Se,S){sub 2} thin films using high-resolution reflection electron energy loss spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heo, Sung; College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746; Lee, Hyung-Ik

2015-06-29

To investigate the band gap profile of Cu(In{sub 1−x},Ga{sub x})(Se{sub 1−y}S{sub y}){sub 2} of various compositions, we measured the band gap profile directly as a function of in-depth using high-resolution reflection energy loss spectroscopy (HR-REELS), which was compared with the band gap profile calculated based on the auger depth profile. The band gap profile is a double-graded band gap as a function of in-depth. The calculated band gap obtained from the auger depth profile seems to be larger than that by HR-REELS. Calculated band gaps are to measure the average band gap of the spatially different varying compositions with respectmore » to considering its void fraction. But, the results obtained using HR-REELS are to be affected by the low band gap (i.e., out of void) rather than large one (i.e., near void). Our findings suggest an analytical method to directly determine the band gap profile as function of in-depth.« less

The Expanded Large Scale Gap Test

DTIC Science & Technology

1987-03-01

NSWC TR 86-32 DTIC THE EXPANDED LARGE SCALE GAP TEST BY T. P. LIDDIARD D. PRICE RESEARCH AND TECHNOLOGY DEPARTMENT ’ ~MARCH 1987 Ap~proved for public...arises, to reduce the spread in the LSGT 50% gap value.) The worst charges, such as those with the highest or lowest densities, the largest re-pressed...Arlington, VA 22217 PE 62314N INS3A 1 RJ14E31 7R4TBK 11 TITLE (Include Security CIlmsilficatiorn The Expanded Large Scale Gap Test . 12. PEIRSONAL AUTHOR() T

Fabrication of high quality Cu2SnS3 thin film solar cell with 1.12% power conversion efficiency obtain by low cost environment friendly sol-gel technique

NASA Astrophysics Data System (ADS)

Chaudhari, J. J.; Joshi, U. S.

2018-03-01

Cu2SnS3 (CTS) is an emerging ternery chalcogenide material with great potential application in thin film solar cells. We present here high quality Cu2SnS3 thin films using a facile spin coating method. The as deposited films of CTS were sulphurized in a graphite box using tubular furnace at 520 °C for 60 min at the rate of 2.83 °C min-1 in argon atmosphere. X-ray diffraction (XRD) and Raman spectroscopy studies confirm tetragonal phase and absence of any secondary phase in sulphurized CTS thin films. X-ray photoelectron spectroscopy (XPS) demonstrates that Cu and Sn are in +1 and +4 oxidation state respectively. Surface morphology of CTS films were analyzed by field emission scanning electron microscope and atomic force microscope (AFM), which revealed a smooth surface with roughness (RMS) of 6.32 nm for sulphurized CTS film. Hall measurements confirmed p-type conductivity with hole concentartion of sulphurized CTS thin film is of 6.5348 × 1020 cm-3. UV-vis spectra revealed a direct energy band gap varies from 1.45 eV to 1.01 eV for as-deposited and sulphurized CTS thin film respectively. Such band gap values are optimum for semiconductor material as an absorber layer of thin film solar cell. The CTS thin film solar cell had following structure: SLG/FTO/ZnO/CTS/Al with short circuit current density of (Jsc) of 11.6 mA cm-2, open circuit voltage (Voc) of 0.276 V, active area of 0.16 cm2, fill factor (FF) of 35% and power conversion efficiency of 1.12% under AM 1.5 (100 mW cm-2) illumination in simulated standard test conditions.

Experimental study of Pulsed Laser Deposited Cu2ZnSnS 4 (CZTS) thin films for photovoltaic applications

NASA Astrophysics Data System (ADS)

Nandur, Abhishek S.

Thin film solar cells are gaining momentum as a renewable energy source. Reduced material requirements (< 2 mum in total film thickness) coupled with fast, low-cost production processes make them an ideal alternative to Si (>15 mum in total thickness) solar cells. Among the various thin film solar absorbers that have been proposed, CZTS (Cu2ZnSnS4) has become the subject of intense interest because of its optimal band gap (1.45 eV), high absorption coefficient (104 cm--1 ) and abundant elemental components. Pulsed Laser Deposition (PLD) provides excellent control over film composition since films are deposited under high vacuum with excellent stoichiometry transfer from the target. Defect-free, near-stoichiometric poly-crystalline CZTS thin films were deposited using PLD from a stoichiometrically close CZTS target (Cu2.6Zn1.1Sn0.7S3.44). The effects of fabrication parameters such as laser energy density, deposition time, substrate temperature and sulfurization (annealing in sulfur) on the surface morphology, composition and optical absorption of the CZTS thin films were examined. The results show that the presence of secondary phases, present both in the bulk and on the surface, affected the electrical and optical properties of the CZTS thin films and the CZTS based TFSCs. After selectively etching away the secondary phases with DIW, HCl and KCN, it was observed that their removal improved the performance of CZTS based TFSCs. Optimal CZTS thin films exhibited an optical band gap of 1.54 eV with an absorption coefficient of 4x10 4cm-1 with a low volume of secondary phases. A TFSC fabricated with the best CZTS thin film obtained from the experimental study done in this thesis showed a conversion efficiency of 6.41% with Voc = 530 mV, Jsc= 27.5 mA/cm2 and a fill factor of 0.44.

Structural and optical properties of Sb65Se35-xGex thin films

NASA Astrophysics Data System (ADS)

Saleh, S. A.; Al-Hajry, A.; Ali, H. M.

2011-07-01

Sb65Se35-xGex (x=0-20 at.%) thin films, prepared by the electron beam evaporation technique on ultrasonically cleaned glass substrates at 300 K, were investigated. The amorphous structure of the thin films was confirmed by x-ray diffraction analysis. The structure was deduced from the Raman spectra measured for all germanium contents in the Sb-Se-Ge matrix. The absorption coefficient (α) of the films was determined by optical transmission measurements. The compositional dependence of the optical band gap is discussed in light of topological and chemical ordered network models.

Cr:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Varghese, Anitta Rose; B. Bhadrapriya, C.; Amarendra, G.; Hussain, Shamima

2018-04-01

Thin films of pure and Chromium doped SnO2 were synthesized using sol-gel method by spin coating technique. XRD studies confirmed the formation of tetragonal structure for SnO2 thin films. Variations in peak width and position were identified with doping. The optical band gap of the undoped films was found to be 3.8eV and varied with doping. Raman spectrum gave signature peaks of Sn-O and Cr-O bonds for undoped and doped films. The uniformity of the samples and formation of aggregates were observed from FESEM analysis.

Studies of an extractor geometry magnetically insulated ion diode with an exploding metal film anode plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rondeau, G.D.

1989-01-01

Magnetically insulated diodes (MIDs) are of interest as ion sources for inertial confinement fusion. The authors examined several issues that are of concern with MIDs, including ion turn-on delay and anode plasma production, and diode impedance history and particle current scaling with the applied magnetic field and gas spacing. The LION pulsed power generator (1.5 MV, 4 {Omega}, 40 ns pulse length) was used to power an extractor geometry magnetically insulated (radical magnetic field) ion beam diode. The diode was studied with three anode configurations. In the first, with epoxy-filled-groove (epoxy) anodes, scaling of the ion and electron currents withmore » the gap and the magnetic field was examined. He found that the observed ion current is consistent with a diode model that has been successful with barrel geometry MIDs. The electron leakage current scaled proportionally to 1/Bd{sup 2}, where d is the anode-cathode gap spacing and B is the magnetic field strength. Studies of ion beam propagation in vacuum showed that space charge non-neutrality near the magnetic field coils caused the beam to expand initially. Later in the ion pulse (20 to 30 ns), the beam expansion became much less severe. The second anode configuration utilized an electron collector protruding above an epoxy anode surface. With the collector, he observed less bremsstrahlung across the active anode region. The last anode configuration studied was the exploding metal film active anode plasma source (EMFAAPS). Current from the accelerator was directed by an electron collector or a plasma opening switch through a thin aluminum film, which exploded to form the anode plasma.« less

Effect of copper doping on the photocatalytic activity of ZnO thin films prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Saidani, T.; Zaabat, M.; Aida, M. S.; Boudine, B.

2015-12-01

In the present work, we prepared undoped and copper doped ZnO thin films by the sol-gel dip coating method on glass substrates from zinc acetate dissolved in a solution of ethanol. The objective of our work is to study the effect of Cu doping with different concentrations on structural, morphological, optical properties and photocatalytic activity of ZnO thin films. For this purpose, we have used XRD to study the structural properties, and AFM to determine the morphology of the surface of the ZnO thin films. The optical properties and the photocatalytic degradation of the films were examined by UV-visibles spectrophotometer. The Tauc method was used to estimate the optical band gap. The XRD spectra indicated that the films have an hexagonal wurtzite structure, which gradually deteriorated with increasing Cu concentration. The results showed that the incorporation of Cu decreases the crystallite size. The AFM study showed that an increase of the concentration of Cu causes the decrease of the surface roughness, which passes from 20.2 for Un-doped ZnO to 12.16 nm for doped ZnO 5 wt% Cu. Optical measurements have shown that all the deposited films show good optical transmittance (77%-92%) in the visible region and increases the optical gap with increasing Cu concentration. The presence of copper from 1% to 5 wt% in the ZnO thin films is found to decelerate the photocatalytic process.

Structural and optical properties of magnetron sputtered MgxZn1-xO thin films

NASA Astrophysics Data System (ADS)

Kumar, Sanjeev; Gupte, Vinay; Sreenivas, K.

2006-04-01

MgxZn1-xO (MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap ~4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications.

Laser induced optical bleaching in Ge{sub 12}Sb{sub 25}S{sub 63} chalcogenide thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naik, Ramakanta, E-mail: ramakanta.naik@gmail.com; Jena, S.; Sahoo, N. K.

2015-06-24

Photo induced effects of Ge{sub 12}Sb{sub 25}S{sub 63} films illuminated with 532 nm laser light is investigated from transmission spectra measured by FTIR spectroscopy. The material exhibit photo bleaching (PB) when exposed to band gap laser for a prolonged time in vacuum. The PB is ascribed to structural changes inside the film as well as surface photo oxidation. The amorphous nature of thin films was detected by X-ray diffraction. The chemical composition of the deposited thin films was examined by Energy Dispersive X-ray Analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on inverse synthesismore » method, and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model. It was found that, the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman spectra analysis also supports the optical changes.« less

Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

NASA Astrophysics Data System (ADS)

Narayanan, Nripasree; Deepak, N. K.

2018-04-01

ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

Effect of band-aligned double absorber layers on photovoltaic characteristics of chemical bath deposited PbS/CdS thin film solar cells.

PubMed

Ho Yeon, Deuk; Chandra Mohanty, Bhaskar; Lee, Seung Min; Soo Cho, Yong

2015-09-23

Here we report the highest energy conversion efficiency and good stability of PbS thin film-based depleted heterojunction solar cells, not involving PbS quantum dots. The PbS thin films were grown by the low cost chemical bath deposition (CBD) process at relatively low temperatures. Compared to the quantum dot solar cells which require critical and multistep complex procedures for surface passivation, the present approach, leveraging the facile modulation of the optoelectronic properties of the PbS films by the CBD process, offers a simpler route for optimization of PbS-based solar cells. Through an architectural modification, wherein two band-aligned junctions are stacked without any intervening layers, an enhancement of conversion efficiency by as much as 30% from 3.10 to 4.03% facilitated by absorption of a wider range of solar spectrum has been obtained. As an added advantage of the low band gap PbS stacked over a wide gap PbS, the devices show stability over a period of 10 days.

Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

PubMed

Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2014-03-28

In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

Optical investigation of vacuum evaporated Se80-xTe20Sbx (x = 0, 6, 12) amorphous thin films

NASA Astrophysics Data System (ADS)

Deepika; Singh, Hukum

2017-09-01

Amorphous thin films of Se80-xTe20Sbx (x = 0, 6, 12) chalcogenide glasses has been deposited onto pre-cleaned glass substrate using thermal evaporation technique under a vacuum of 10-5 Torr. The absorption and transmission spectra of these thin films have been recorded using UV spectrophotometer in the spectral range 400-2500 nm at room temperature. Swanepoel envelope method has been employed to obtain film thickness and optical constants such as refractive index, extinction coefficient and dielectric constant. The optical band gap of the samples has been calculated using Tauc relation. The study reveals that optical band gap decreases on increase in Sb content. This is due to decrease in average single bond energy calculated using chemical bond approach. The values of urbach energy has also been computed to support the above observation. Variation of refractive index has also been studies in terms of wavelength and energy using WDD model and values of single oscillator energy and dispersion energy has been obtained.

Detecting stray microwaves and nonequilibrium quasiparticles in thin films by single-electron tunneling

NASA Astrophysics Data System (ADS)

Saira, Olli-Pentti; Maisi, Ville; Kemppinen, Antti; Möttönen, Mikko; Pekola, Jukka

2013-03-01

Superconducting thin films and tunnel junctions are the building blocks of many state-of-the-art technologies related to quantum information processing, microwave detection, and electronic amplification. These devices operate at millikelvin temperatures, and - in a naive picture - their fidelity metrics are expected to improve as the temperature is lowered. However, very often one finds in the experiment that the device performance levels off around 100-150 mK. In my presentation, I will address three common physical mechanisms that can cause such saturation: stray microwaves, nonequilibrium quasiparticles, and sub-gap quasiparticle states. The new experimental data I will present is based on a series of studies on quasiparticle transport in Coulomb-blockaded normal-insulator-superconductor tunnel junction devices. We have used a capacitively coupled SET electrometer to detect individual quasiparticle tunneling events in real time. We demonstrate the following record-low values for thin film aluminum: quasiparticle density nqp < 0 . 033 / μm3 , normalized density of sub-gap quasiparticle states (Dynes parameter) γ < 1 . 6 ×10-7 . I will also discuss some sample stage and chip designs that improve microwave shielding.

Focusing, refraction, and asymmetric transmission of elastic waves in solid metamaterials with aligned parallel gaps.

PubMed

Su, Xiaoshi; Norris, Andrew N

2016-06-01

Gradient index (GRIN), refractive, and asymmetric transmission devices for elastic waves are designed using a solid with aligned parallel gaps. The gaps are assumed to be thin so that they can be considered as parallel cracks separating elastic plate waveguides. The plates do not interact with one another directly, only at their ends where they connect to the exterior solid. To formulate the transmission and reflection coefficients for SV- and P-waves, an analytical model is established using thin plate theory that couples the waveguide modes with the waves in the exterior body. The GRIN lens is designed by varying the thickness of the plates to achieve different flexural wave speeds. The refractive effect of SV-waves is achieved by designing the slope of the edge of the plate array, and keeping the ratio between plate length and flexural wavelength fixed. The asymmetric transmission of P-waves is achieved by sending an incident P-wave at a critical angle, at which total conversion to SV-wave occurs. An array of parallel gaps perpendicular to the propagation direction of the reflected waves stop the SV-wave but let P-waves travel through. Examples of focusing, steering, and asymmetric transmission devices are discussed.

Electrical transport and optical band gap of NiFe2Ox thin films

NASA Astrophysics Data System (ADS)

Bougiatioti, Panagiota; Manos, Orestis; Klewe, Christoph; Meier, Daniel; Teichert, Niclas; Schmalhorst, Jan-Michael; Kuschel, Timo; Reiss, Günter

2017-12-01

We fabricated NiFe2Ox thin films on MgAl2O4(001) by reactive dc magnetron co-sputtering varying the oxygen partial pressure. The fabrication of a material with a variable oxygen deficiency leads to controllable electrical and optical properties which are beneficial for the investigations of the transport phenomena and could, therefore, promote the use of such materials in spintronic and spin caloritronic applications. We used several characterization techniques to investigate the film properties, focusing on their structural, magnetic, electrical, and optical properties. From the electrical resistivity, we obtained the conduction mechanisms that govern the systems in the high and low temperature regimes. We further extracted low thermal activation energies which unveil extrinsic transport mechanisms. The thermal activation energy decreases in the less oxidized samples revealing the pronounced contribution of a large amount of electronic states localized in the band gap to the electrical conductivity. The Hall coefficient is negative and decreases with increasing conductivity as expected for n-type conduction, while the Hall- and the drift mobilities show a large difference. The optical band gaps were determined via ultraviolet-visible spectroscopy. They follow a similar trend as the thermal activation energies, with lower band gap values in the less oxidized samples.

Swift heavy ion induced modifications in optical and electrical properties of cadmium selenide thin films

NASA Astrophysics Data System (ADS)

Choudhary, Ritika; Chauhan, Rishi Pal

2017-07-01

The modification in various properties of thin films using high energetic ion beam is an exciting area of basic and applied research in semiconductors. In the present investigations, cadmium selenide (CdSe) thin films were deposited on ITO substrate using electrodeposition technique. To study the swift heavy ion (SHI) induced effects, the deposited thin films were irradiated with 120 MeV heavy Ag9+ ions using pelletron accelerator facility at IUAC, New Delhi, India. Structural phase transformation in CdSe thin film from metastable cubic phase to stable hexagonal phase was observed after irradiation leading to decrease in the band gap from 2.47 eV to 2.12 eV. The phase transformation was analyzed through X-ray diffraction patterns. During SHI irradiation, Generation of high temperature and pressure by thermal spike along the trajectory of incident ions in the thin films might be responsible for modification in the properties of thin films.[Figure not available: see fulltext.

Synthesis, characterization and oxidation of metallic cobalt (Co) thin film into semiconducting cobalt oxide (Co3O4)thin film using microwave plasma CVD

NASA Astrophysics Data System (ADS)

Rahman Ansari, Akhalakur; Hussain, Shahir; Imran, Mohd; Abdel-wahab, M. Sh; Alshahrie, Ahmed

2018-06-01

The pure cobalt thin film was deposited on the glass substrate by using DC magnetron sputtering and then exposed to microwave assist oxygen plasma generated in microwave plasma CVD. The oxidation process of Co thin film into Co3O4 thin films with different microwave power and temperature were studied. The influences of microwave power, temperature and irradiation time were investigated on the morphology and particle size of oxide thin films. The crystal structure, chemical conformation, morphologies and optical properties of oxidized Co thin films (Co3O4) were studied by using x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Raman Spectroscopy and UV–vis Spectroscopy. The data of these films showed complete oxidation pure metallic cobalt (Co) into cobalt oxide (Co3O4). The optical properties were studied for calculating the direct band gaps which ranges from 1.35 to 1.8 eV.

GaAsP on GaP top solar cells

NASA Technical Reports Server (NTRS)

Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

1985-01-01

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Tandem Solar Cells from Accessible Low Band-Gap Polymers Using an Efficient Interconnecting Layer.

PubMed

Bag, Santanu; Patel, Romesh J; Bunha, Ajaykumar; Grand, Caroline; Berrigan, J Daniel; Dalton, Matthew J; Leever, Benjamin J; Reynolds, John R; Durstock, Michael F

2016-01-13

Tandem solar cell architectures are designed to improve device photoresponse by enabling the capture of wider range of solar spectrum as compared to single-junction device. However, the practical realization of this concept in bulk-heterojunction polymer systems requires the judicious design of a transparent interconnecting layer compatible with both polymers. Moreover, the polymers selected should be readily synthesized at large scale (>1 kg) and high performance. In this work, we demonstrate a novel tandem polymer solar cell that combines low band gap poly isoindigo [P(T3-iI)-2], which is easily synthesized in kilogram quantities, with a novel Cr/MoO3 interconnecting layer. Cr/MoO3 is shown to be greater than 80% transparent above 375 nm and an efficient interconnecting layer for P(T3-iI)-2 and PCDTBT, leading to 6% power conversion efficiencies under AM 1.5G illumination. These results serve to extend the range of interconnecting layer materials for tandem cell fabrication by establishing, for the first time, that a thin, evaporated layer of Cr/MoO3 can work as an effective interconnecting layer in a tandem polymer solar cells made with scalable photoactive materials.

HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides

PubMed Central

Mleczko, Michal J.; Zhang, Chaofan; Lee, Hye Ryoung; Kuo, Hsueh-Hui; Magyari-Köpe, Blanka; Moore, Robert G.; Shen, Zhi-Xun; Fisher, Ian R.; Nishi, Yoshio; Pop, Eric

2017-01-01

The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO2 as a high-quality “native” insulator. In contrast, other mainstream semiconductors lack stable oxides and must rely on deposited insulators, presenting numerous compatibility challenges. We demonstrate that layered two-dimensional (2D) semiconductors HfSe2 and ZrSe2 have band gaps of 0.9 to 1.2 eV (bulk to monolayer) and technologically desirable “high-κ” native dielectrics HfO2 and ZrO2, respectively. We use spectroscopic and computational studies to elucidate their electronic band structure and then fabricate air-stable transistors down to three-layer thickness with careful processing and dielectric encapsulation. Electronic measurements reveal promising performance (on/off ratio > 106; on current, ~30 μA/μm), with native oxides reducing the effects of interfacial traps. These are the first 2D materials to demonstrate technologically relevant properties of silicon, in addition to unique compatibility with high-κ dielectrics, and scaling benefits from their atomically thin nature. PMID:28819644

Strain engineering of atomic and electronic structures of few-monolayer-thick GaN

NASA Astrophysics Data System (ADS)

Kolobov, A. V.; Fons, P.; Saito, Y.; Tominaga, J.; Hyot, B.; André, B.

2017-07-01

Two-dimensional (2D) semiconductors possess the potential to ultimately minimize the size of devices and concomitantly drastically reduce the corresponding energy consumption. In addition, materials in their atomic-scale limit often possess properties different from their bulk counterparts paving the way to conceptually novel devices. While graphene and 2D transition-metal dichalcogenides remain the most studied materials, significant interest also exists in the fabrication of atomically thin structures from traditionally 3D semiconductors such as GaN. While in the monolayer limit GaN possesses a graphenelike structure and an indirect band gap, it was recently demonstrated that few-layer GaN acquires a Haeckelite structure in the direction of growth with an effectively direct gap. In this work, we demonstrate the possibility of strain engineering of the atomic and electronic structure of few-monolayer-thick GaN structures, which opens new avenues for their practical application in flexible nanoelectronics and nano-optoelectronics. Our simulations further suggest that due to the weak van der Waals-like interaction between a substrate and an overlayer, the use of a MoS2 substrate may be a promising route to fabricate few-monolayer Haeckelite GaN experimentally.

Design Guideline for New Generation of High-Temperature Guarded Hot Plate

NASA Astrophysics Data System (ADS)

Wu, J.; Hameury, J.; Failleau, G.; Blahut, A.; Vachova, T.; Strnad, R.; Krause, M.; Rafeld, E.; Hammerschmidt, U.

2018-02-01

This paper complements the existing measurement standards and literature for high-temperature guarded hot plates (HTGHPs) by addressing specific issues relating to thermal conductivity measurement of technical insulation at high temperatures. The examples given are focused on the designs of HTGHPs for measuring thin thermal insulation. The sensitivity studies have been carried out on major influencing factors that affect the thermal conductivity measurements using HTGHPs, e.g., the uncertainty of temperature measurements, plate flatness and center-guard gap design and imbalance. A new configuration of center-guard gap with triangular shape cross section has been optimized to obtain the same thermal resistance as a 2 mm wide gap with rectangular shape cross section that has been used in the HTGHPs at NPL and LNE. Recommendations have been made on the selections of heater plate materials, high-temperature high-emissivity coatings and miniature temperature sensors. For the first time, thermal stress analysis method has been applied to the field of HTGHPs, in order to estimate the effect of differential thermal expansion on the flatness of thin rigid specimens during thermal conductivity tests in a GHP.

Strain tuning of electronic structure in Bi 4Ti 3O 12-LaCoO 3 epitaxial thin films

DOE PAGES

Choi, Woo Seok; Lee, Ho Nyung

2015-05-08

In this study, we investigated the crystal and electronic structures of ferroelectric Bi 4Ti 3O 12 single-crystalline thin films site-specifically substituted with LaCoO 3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO 3 and SrTiO 3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3dmore » states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t 2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.« less

Free surfaces recast superconductivity in few-monolayer MgB2: Combined first-principles and ARPES demonstration.

PubMed

Bekaert, J; Bignardi, L; Aperis, A; van Abswoude, P; Mattevi, C; Gorovikov, S; Petaccia, L; Goldoni, A; Partoens, B; Oppeneer, P M; Peeters, F M; Milošević, M V; Rudolf, P; Cepek, C

2017-10-31

Two-dimensional materials are known to harbour properties very different from those of their bulk counterparts. Recent years have seen the rise of atomically thin superconductors, with a caveat that superconductivity is strongly depleted unless enhanced by specific substrates, intercalants or adatoms. Surprisingly, the role in superconductivity of electronic states originating from simple free surfaces of two-dimensional materials has remained elusive to date. Here, based on first-principles calculations, anisotropic Eliashberg theory, and angle-resolved photoemission spectroscopy (ARPES), we show that surface states in few-monolayer MgB 2 make a major contribution to the superconducting gap spectrum and density of states, clearly distinct from the widely known, bulk-like σ- and π-gaps. As a proof of principle, we predict and measure the gap opening on the magnesium-based surface band up to a critical temperature as high as ~30 K for merely six monolayers thick MgB 2 . These findings establish free surfaces as an unavoidable ingredient in understanding and further tailoring of superconductivity in atomically thin materials.

Validity of the two-level model for Viterbi decoder gap-cycle performance

NASA Technical Reports Server (NTRS)

Dolinar, S.; Arnold, S.

1990-01-01

A two-level model has previously been proposed for approximating the performance of a Viterbi decoder which encounters data received with periodically varying signal-to-noise ratio. Such cyclically gapped data is obtained from the Very Large Array (VLA), either operating as a stand-alone system or arrayed with Goldstone. This approximate model predicts that the decoder error rate will vary periodically between two discrete levels with the same period as the gap cycle. It further predicts that the length of the gapped portion of the decoder error cycle for a constraint length K decoder will be about K-1 bits shorter than the actual duration of the gap. The two-level model for Viterbi decoder performance with gapped data is subjected to detailed validation tests. Curves showing the cyclical behavior of the decoder error burst statistics are compared with the simple square-wave cycles predicted by the model. The validity of the model depends on a parameter often considered irrelevant in the analysis of Viterbi decoder performance, the overall scaling of the received signal or the decoder's branch-metrics. Three scaling alternatives are examined: optimum branch-metric scaling and constant branch-metric scaling combined with either constant noise-level scaling or constant signal-level scaling. The simulated decoder error cycle curves roughly verify the accuracy of the two-level model for both the case of optimum branch-metric scaling and the case of constant branch-metric scaling combined with constant noise-level scaling. However, the model is not accurate for the case of constant branch-metric scaling combined with constant signal-level scaling.

Investigation of Annealing Temperature on Copper Oxide Thin Films Using Sol-Gel Spin Coating Technique

NASA Astrophysics Data System (ADS)

Hashim, H.; Samat, S. F. A.; Shariffudin, S. S.; Saad, P. S. M.

2018-03-01

Copper (II) Oxide or cupric oxide (CuO) is one of the well-known materials studied for thin films applications. This paper was studied on the effect of annealing temperature to CuO thin films using sol-gel method and spin coating technique. The solution was prepared by sol-gel method and the thin films were synthesized at various temperatures from 500°C to 700°C that deposited onto the quartz substrates. After the annealing process, the thin films were uniform and brownish black in colour. The measurements were performed by atomic force microscopy (AFM), surface profiler (SP), two-point probe and Ultraviolet-visible (UV-Vis-NIR) spectrometer. From the optical measurement, the band gap was estimated to be 1.44eV for sample annealed at 550°C.

Chemical spray pyrolyzed kesterite Cu2ZnSnS4 (CZTS) thin films

NASA Astrophysics Data System (ADS)

Khalate, S. A.; Kate, R. S.; Deokate, R. J.

2018-04-01

Pure kesterite phase thin films of Cu2ZnSnS4 (CZTS) were synthesized at different substrate temperatures using sulphate precursors by spray pyrolysis method. The significance of synthesis temperature on the structural, morphological and optical properties has been studied. The X-ray analysis assured that synthesized CZTS thin films showing pure kesterite phase. The value of crystallite size was found maximum at the substrate temperature 400 °C. At the same temperature, microstructural properties such as dislocation density, micro-strain and stacking fault probability were found minimum. The morphological examination designates the development of porous and uniform CZTS thin films. The synthesized CZTS thin films illustrate excellent optical absorption (105 cm-1) in the visible band and the optical band gap varies in the range of 1.489 eV to 1.499 eV.

Adiabatic Nanofocusing in Hybrid Gap Plasmon Waveguides on the Silicon-on-Insulator Platform.

PubMed

Nielsen, Michael P; Lafone, Lucas; Rakovich, Aliaksandra; Sidiropoulos, Themistoklis P H; Rahmani, Mohsen; Maier, Stefan A; Oulton, Rupert F

2016-02-10

We present an experimental demonstration of a new class of hybrid gap plasmon waveguides on the silicon-on-insulator (SOI) platform. Created by the hybridization of the plasmonic mode of a gap in a thin metal sheet and the transverse-electric (TE) photonic mode of an SOI slab, this waveguide is designed for efficient adiabatic nanofocusing simply by varying the gap width. For gap widths greater than 100 nm, the mode is primarily photonic in character and propagation lengths can be many tens of micrometers. For gap widths below 100 nm, the mode becomes plasmonic in character with field confinement predominantly within the gap region and with propagation lengths of a few microns. We estimate the electric field intensity enhancement in hybrid gap plasmon waveguide tapers at 1550 nm by three-photon absorption of selectively deposited CdSe/ZnS quantum dots within the gap. Here, we show electric field intensity enhancements of up to 167 ± 26 for a 24 nm gap, proving the viability of low loss adiabatic nanofocusing on a commercially relevant photonics platform.

Determination of the optical absorption spectra of thin layers from their photoacoustic spectra

NASA Astrophysics Data System (ADS)

Bychto, Leszek; Maliński, Mirosław; Patryn, Aleksy; Tivanov, Mikhail; Gremenok, Valery

2018-05-01

This paper presents a new method for computations of the optical absorption coefficient spectra from the normalized photoacoustic amplitude spectra of thin semiconductor samples deposited on the optically transparent and thermally thick substrates. This method was tested on CuIn(Te0.7Se0.3)2 thin films. From the normalized photoacoustic amplitude spectra, the optical absorption coefficient spectra were computed with the new formula as also with the numerical iterative method. From these spectra, the value of the energy gap of the thin film material and the type of the optical transitions were determined. From the experimental optical transmission spectra, the optical absorption coefficient spectra were computed too, and compared with the optical absorption coefficient spectra obtained from photoacoustic spectra.

Study of the morphology of ZnS thin films deposited on different substrates via chemical bath deposition.

PubMed

Gómez-Gutiérrez, Claudia M; Luque, P A; Castro-Beltran, A; Vilchis-Nestor, A R; Lugo-Medina, Eder; Carrillo-Castillo, A; Quevedo-Lopez, M A; Olivas, A

2015-01-01

In this work, the influence of substrate on the morphology of ZnS thin films by chemical bath deposition is studied. The materials used were zinc acetate, tri-sodium citrate, thiourea, and ammonium hydroxide/ammonium chloride solution. The growth of ZnS thin films on different substrates showed a large variation on the surface, presenting a poor growth on SiO2 and HfO2 substrates. The thin films on ITO substrate presented a uniform and compact growth without pinholes. The optical properties showed a transmittance of about 85% in the visible range of 300-800 nm with band gap of 3.7 eV. © Wiley Periodicals, Inc.

Physical properties of nanostructured strontium oxide thin film grown by chemical bath deposition technique

NASA Astrophysics Data System (ADS)

Ahmad, Farhan; Belkhedkar, M. R.; Salodkar, R. V.

2018-05-01

Nanostructured SrO thin film of thickness 139 nm was deposited by chemical bath deposition technique onto glass substrates using SrCl2.6H2O and NaOH as cationic and anionic precursors without complexing agents. The X-ray diffraction studies revealed that, SrO thin film is nanocrystalline in nature with cubic structure. The surface morphology of the SrO film was investigated by means of field emission scanning electron microscopy. The optical studies showed that SrO film exhibits direct as well as indirect optical band gap energy. The electrical resistivity and activation energy of SrO thin film is found to be of the order of 106 Ω cm and 0.58eV respectively.

Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

NASA Astrophysics Data System (ADS)

Chowdhury, Sisir; Das, Anish; Banerji, Pallab

2018-05-01

Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).

Spatial scale and sampling resolution affect measures of gap disturbance in a lowland tropical forest: implications for understanding forest regeneration and carbon storage.

PubMed

Lobo, Elena; Dalling, James W

2014-03-07

Treefall gaps play an important role in tropical forest dynamics and in determining above-ground biomass (AGB). However, our understanding of gap disturbance regimes is largely based either on surveys of forest plots that are small relative to spatial variation in gap disturbance, or on satellite imagery, which cannot accurately detect small gaps. We used high-resolution light detection and ranging data from a 1500 ha forest in Panama to: (i) determine how gap disturbance parameters are influenced by study area size, and the criteria used to define gaps; and (ii) to evaluate how accurately previous ground-based canopy height sampling can determine the size and location of gaps. We found that plot-scale disturbance parameters frequently differed significantly from those measured at the landscape-level, and that canopy height thresholds used to define gaps strongly influenced the gap-size distribution, an important metric influencing AGB. Furthermore, simulated ground surveys of canopy height frequently misrepresented the true location of gaps, which may affect conclusions about how relatively small canopy gaps affect successional processes and contribute to the maintenance of diversity. Across site comparisons need to consider how gap definition, scale and spatial resolution affect characterizations of gap disturbance, and its inferred importance for carbon storage and community composition.

Analysis of defects of overhead facade systems and other light thin-walled structures

NASA Astrophysics Data System (ADS)

Endzhievskiy, L.; Frolovskaia, A.; Petrova, Y.

2017-04-01

This paper analyzes the defects and the causes of contemporary design solutions with an example of overhead facade systems with ventilated air gaps and light steel thin-walled structures on the basis of field experiments. The analysis is performed at all stages of work: design, manufacture, including quality, construction, and operation. Practical examples are given. The main causes of accidents and the accident rate prediction are looked upon and discussed.

Fabrication and characterization of anthracene thin films for wide-scale organic optoelectronic applications based on linear/nonlinear analyzed optical dispersion parameters

NASA Astrophysics Data System (ADS)

Nawar, Ahmed M.; Yahia, I. S.

2017-08-01

This research work is devoted to studying the linear and nonlinear optical properties of anthracene thin films. For the first time, the fabrication of nanocrystalline anthracene films is presented by using the thermal evaporation conventional technique. All the studied anthracene films exhibit monoclinic crystal structure with dominant preferred orientation along the (001) plane in accordance with X-ray diffraction analysis. The average crystalline size and the strain parameter were calculated and found to be ≈ 14 nm and 42 lines2. nm, respectively. The transparency of the fabricated anthracene films is high (>80%) from the end of the visible to the near-infrared region at 1500 nm, after that; it reaches to 87%. The characteristic behavior, analysis of refractive index and absorption coefficient based on the measured spectrophotometric data of the transmittance and reflectance spectra. The transition is allowed one and the evaluated optical band gap ∼3.1 eV with energy tail ∼105 meV. The dispersion curves of the refractive index were found to follow the Wemple-DiDomenico model. The static optical dielectric constant was found to be 2.592. The molecular polarizability of anthracene thin films presented and its value ∼56.58 (Å)3. A simple spectroscopic method is used to characterize and estimate the nonlinear optical susceptibilities. Thermal evaporation technology could be useful to fabricate blue OLED and window film in photodetector devices based-anthracene films.

Mechanical properties of thin films of laser-welded titanium and their associated welding defects.

PubMed

Wu, Yulu; Xin, Haitao; Zhang, Chunbao; Tang, Zhongbin; Zhang, Zhiyuan; Wang, Weifeng

2014-11-01

The aim of this study was to evaluate the mechanical properties of thin films of laser-welded cast titanium using an interference strain/displacement gauge (ISDG) and to analyze factors that affect laser welding. Dog-bone-shaped small specimens of cast titanium were prepared by wire cutting after they were laser-welded. The specimens were divided into three groups according to the gap distance of the laser weld; the control was non-welded titanium. Small specimens without cast defects detected by X-ray screening were measured by a tensile test machine using ISDG, and stress-strain curves were drawn. Finally, the fracture texture was analyzed. The ultimate tensile strengths (UTSs) of specimens with a gap distance of 0.00, 0.25, and 0.50 mm were 492.16 ± 33.19, 488.09 ± 43.18, and 558.45 ± 10.80 MPa, respectively. There were no significant differences in UTS between the test groups and the control group (p > 0.05). However, the plastic deformation and the percent elongation increased as the gap distance increased. Incomplete penetration defects appeared in groups that had small gap distances, which may have affected the properties of the laser-welded titanium. However, the welding material was still pure titanium. These results suggest that an appropriate gap distance should be maintained to improve the application of dental laser welding.

Metal-assisted exfoliation (MAE): green process for transferring graphene to flexible substrates and templating of sub-nanometer plasmonic gaps (Presentation Recording)

NASA Astrophysics Data System (ADS)

Zaretski, Aliaksandr V.; Marin, Brandon C.; Moetazedi, Herad; Dill, Tyler J.; Jibril, Liban; Kong, Casey; Tao, Andrea R.; Lipomi, Darren J.

2015-09-01

This paper describes a new technique, termed "metal-assisted exfoliation," for the scalable transfer of graphene from catalytic copper foils to flexible polymeric supports. The process is amenable to roll-to-roll manufacturing, and the copper substrate can be recycled. We then demonstrate the use of single-layer graphene as a template for the formation of sub-nanometer plasmonic gaps using a scalable fabrication process called "nanoskiving." These gaps are formed between parallel gold nanowires in a process that first produces three-layer thin films with the architecture gold/single-layer graphene/gold, and then sections the composite films with an ultramicrotome. The structures produced can be treated as two gold nanowires separated along their entire lengths by an atomically thin graphene nanoribbon. Oxygen plasma etches the sandwiched graphene to a finite depth; this action produces a sub-nanometer gap near the top surface of the junction between the wires that is capable of supporting highly confined optical fields. The confinement of light is confirmed by surface-enhanced Raman spectroscopy measurements, which indicate that the enhancement of the electric field arises from the junction between the gold nanowires. These experiments demonstrate nanoskiving as a unique and easy-to-implement fabrication technique that is capable of forming sub-nanometer plasmonic gaps between parallel metallic nanostructures over long, macroscopic distances. These structures could be valuable for fundamental investigations as well as applications in plasmonics and molecular electronics.

Landscape-scale forest disturbance regimes in southern Peruvian Amazonia.

PubMed

Boyd, Doreen S; Hill, Ross A; Hopkinson, Chris; Baker, Timothy R

2013-10-01

Landscape-scale gap-size frequency distributions in tropical forests are a poorly studied but key ecological variable. Currently, a scale gap currently exists between local-scale field-based studies and those employing regional-scale medium-resolution satellite data. Data at landscape scales but of fine resolution would, however, facilitate investigation into a range of ecological questions relating to gap dynamics. These include whether canopy disturbances captured in permanent sample plots (PSPs) are representative of those in their surrounding landscape, and whether disturbance regimes vary with forest type. Here, therefore, we employ airborne LiDAR data captured over 142.5 km2 of mature, swamp, and regenerating forests in southeast Peru to assess the landscape-scale disturbance at a sampling resolution of up to 2 m. We find that this landscape is characterized by large numbers of small gaps; large disturbance events are insignificant and infrequent. Of the total number of gaps that are 2 m2 or larger in area, just 0.45% were larger than 100 m2, with a power-law exponent (alpha) value of the gap-size frequency distribution of 2.22. However, differences in disturbance regimes are seen among different forest types, with a significant difference in the alpha value of the gap-size frequency distribution observed for the swamp/regenerating forests compared with the mature forests at higher elevations. Although a relatively small area of the total forest of this region was investigated here, this study presents an unprecedented assessment of this landscape with respect to its gap dynamics. This is particularly pertinent given the range of forest types present in the landscape and the differences observed. The coupling of detailed insights into forest properties and growth provided by PSPs with the broader statistics of disturbance events using remote sensing is recommended as a strong basis for scaling-up estimates of landscape and regional-scale carbon balance.

Band gaps and Brekhovskikh attenuation of laser-generated surface acoustic waves in a patterned thin film structure on silicon

NASA Astrophysics Data System (ADS)

Maznev, A. A.

2008-10-01

Surface acoustic modes of a periodic array of copper and SiO2 lines on a silicon substrate are studied using a laser-induced transient grating technique. It is found that the band gap formed inside the Brillouin zone due to “avoided crossing” of Rayleigh and Sezawa modes is much greater than the band gap in the Rayleigh wave dispersion formed at the zone boundary. Another unexpected finding is that a very strong periodicity-induced attenuation is observed above the longitudinal threshold rather than above the transverse threshold.

An investigation of the optical constants and band gap of chromium disilicide

NASA Technical Reports Server (NTRS)

Bost, M. C.; Mahan, John E.

1988-01-01

Optical properties of polycrystalline thin films of CrSi2 grown by the diffusion couple method on silicon substrates were investigated. An analysis of the energy dependence of the absorption coefficient indicates that the material is an indirect forbidden gap semiconductor with a band-gap value of slightly less than 0.35 eV. This result was confirmed by measurements of the temperature dependence of the intrinsic conductivity. The value of the bandgap corresponds well to an important window of transparency in the earth's atmosphere (3-5 microns), which makes the material of potential interest for IR detector applications.

Deformation of the Tonga Slab: Evidence for Interaction with a Small-scale Secondary Plume in the Transition Zone

NASA Astrophysics Data System (ADS)

Billen, M. I.; Bikoba, J. Z.; Tarlow, S.

2015-12-01

Magali I. Billen and John Z. BikobaThe Tonga Slab is the most seismically active subduction zone providing a uniquely detailed picture of the internal deformation of the slab, with apparent warping and folding, from the surface through the transition zone. Here, we investigate the dynamical origin of a irregular feature in the seismicity within the transition zone located at 21-28oS, using 3D visualization and analysis of the seismicity and compression/tension (P/T) axis from the moment tensor solutions to characterize the geometry of, and the orientation of forces acting on, the slab. This irregular feature can be described as narrow region of upward deflection of the slab, with a gap in seismicity beyond (down-dip of) the deflected region, and flanked by two narrow V-shaped gaps in seismicity suggestive of tearing of the slab. The P/T axis show a dominate down-dip orientation of the P axis above the deflection point, which rotate to a nearly vertical orientation within the central region of the deflected slab. The adjacent attached regions (down-dip of the two flanking slab gaps) also have rotated and more heterogeneous P/T axis orientations. In contrast, the adjacent section of the slab to the north of 21oS has continuous seismicity throughout the transition zone, with a roughly uniform planar shape, and generally down-dip orientation of the P axis. We explore three possible hypothesis for the observed deformation including: 1) deflection due to a buoyant metastable olivine wedge, 2) a buckling feature in the slab as previously proposed by Myhill (GJI., 2013), and interaction with a small-scale, secondary plume upwelling below the slab. If the newly-observed gaps in seismicity indicate physical gaps or significant thinning of the slab, then these observations are not consistent with the buckling hypothesis. The lack of significant along-strike variation in slab age or subduction rate also suggests that a localized region of metastable olivine is unlikely. Therefore, we test the third hypothesis using a simple 3D geodynamical model of a planar dipping slab overlying a localized buoyant upwelling (radius < 150 km). We present comparisons of the observations to the model predictions for the subsequent deformation of the slab and orientations of principal stress axis within the slab.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodríguez, C.A.; Sandoval-Paz, M.G.; Cabello, G.

Highlights: • High quality ZnS thin films have been deposited by chemical bath deposition technique from a non-toxic precursor’s solution. • Nanocrystalline ZnS thin films with large band gap energy were synthesized without using ammonia. • Evidence that the growing of the thin films is carried out by means of hydroxide mechanism was found. • The properties of these ZnS thin films are similar and in some cases better than the corresponding ones produced using toxic precursors such as ammonia. - Abstract: In solar cells, ZnS window layer deposited by chemical bath technique can reach the highest conversion efficiency; however,more » precursors used in the process normally are materials highly volatile, toxic and harmful to the environment and health (typically ammonia and hydrazine). In this work the characterization of ZnS thin films deposited by chemical bath in a non-toxic alkaline solution is reported. The effect of deposition technique (growth in several times) on the properties of the ZnS thin film was studied. The films exhibited a high percentage of optical transmission (greater than 80%); as the deposition time increased a decreasing in the band gap values from 3.83 eV to 3.71 eV was observed. From chemical analysis, the presence of ZnS and Zn(OH){sub 2} was identified and X-ray diffraction patterns exhibited a clear peak corresponding to ZnS hexagonal phase (1 0 3) plane, which was confirmed by electron diffraction patterns. From morphological studies, compact samples with well-defined particles, low roughness, homogeneous and pinhole-free in the surface were observed. From obtained results, it is evident that deposits of ZnS–CBD using a non-toxic solution are suitable as window layer for TFSC.« less

Structures with negative index of refraction

DOEpatents

Soukoulis, Costas M [Ames, IA; Zhou, Jiangfeng [Ames, IA; Koschny, Thomas [Ames, IA; Zhang, Lei [Ames, IA; Tuttle, Gary [Ames, IA

2011-11-08

The invention provides simplified negative index materials (NIMs) using wire-pair structures, 4-gap single ring split-ring resonator (SRR), fishnet structures and overleaf capacitor SRR. In the wire-pair arrangement, a pair of short parallel wires and continuous wires are used. In the 4-gap single-ring SRR, the SRRs are centered on the faces of a cubic unit cell combined with a continuous wire type resonator. Combining both elements creates a frequency band where the metamaterial is transparent with simultaneously negative .di-elect cons. and .mu.. In the fishnet structure, a metallic mesh on both sides of the dielectric spacer is used. The overleaf capacitor SRR changes the gap capacities to small plate capacitors by making the sections of the SRR ring overlap at the gaps separated by a thin dielectric film. This technique is applicable to conventional SRR gaps but it best deploys for the 4-gap single-ring structures.

Influence of twin boundaries on superconducting gap nodes in FeSe single crystal studied by STM/STS

NASA Astrophysics Data System (ADS)

Watashige, T.; Hanaguri, T.; Kohsaka, Y.; Iwaya, K.; Fu, Y.; Kasahara, S.; Watanabe, D.; Mizukami, Y.; Mikami, T.; Kawamoto, Y.; Kurata, S.; Shibauchi, T.; Matsuda, Y.; Böhmer, A. E.; Wolf, T.; Meingast, C.; Löhneysen, H. V.

2014-03-01

We performed scanning tunneling microscopy (STM) and spectroscopy (STS) measurements on high-quality FeSe single crystals grown by vapor transport technique to examine the superconducting-gap structure. In MBE-grown FeSe thin films, based on the V-shaped tunneling spectra, nodal superconductivity is suggested. It is interesting to investigate how the nodes are affected by various kinds of defects. We found that twin boundaries bring about drastic effects on the gap nodes. With approaching to the twin boundary, V-shaped spectra gradually change to U-shaped ones. Interestingly, in the area between the twin boundaries separated by about 30 nm, the gap node is completely lifted and there appears a finite gap over +/-0.4 meV. This unusual twin-boundary effect will give us a hint to elucidate the superconducting-gap structure.

Induced changes in refractive index, optical band gap, and absorption edge of polycarbonate-SiO2 thin films by Vis-IR lasers

NASA Astrophysics Data System (ADS)

Ehsani, Hassan; Akhoondi, Somaieh

2016-09-01

In this experimental work, we have studied induced changes in refractive index, extinction coefficient, and optical band-gap of Bisphenol-A-polycarbonate (BPA-PC) coated with a uniform and thin, anti-scratch SiO2 film irradiated by visible to near-infrared lasers at 532 nm (green),650 nm(red), and 980 nm (IR)wavelength lasers with different energy densities. Our lasers sources are indium-gallium-aluminum-phosphide, second harmonic of neodymium-YAG-solid state lasers and gallium-aluminum-arsenide-semiconductor laser. The energy densities of our sources have been changed by changing the spot size of incident laser. samples transmission spectra were monitored by carry500 spectrophotometer and induced changes in optical properties are evaluated by using, extrapolation of the transmission spectrum through Swanepoel method and computer application

Green, stable and earth abundant ionic PV absorbers based on chalcogenide perovskite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Hao

Searching for inexpensive, environment-friendly, and air-stable absorber materials for thin film solar cells has become a key thrust of PV research. Supported by this one-year award, the UB-RPI team aims to develop a novel class of semiconductors — chalcogenide perovskites. Sharing some similarities to the widely researched halide perovskites, and unlike most conventional semiconductors, the chalcogenide perovskites are strongly ionic. Such characteristics is expected to provide intrinsic defect properties favorable for charge transport in PV absorbers. In this one-year project, we confirmed structural stability of the BaZrS3 material through high pressure Raman studies. We find no evidence that the perovskitemore » structure of BaZrS3 undergoes any phase changes under hydrostatic pressure to at least 8.9 GPa. Our results indicate the robust structural stability of BaZrS3, and suggest cation alloying as a viable approach for band-gap engineering for photovoltaic and other applications. We also achieved reduced band gap to 1.45 eV by Ti-alloying of BaZrS3, which is close to the optimal value for a single junction solar cell. We further synthesized BaZrS3 thin films with desired crystal structure and band gap. The optical absorption is high as expected. The carrier mobility is moderate. The high processing temperature limits its ability for device integration. We are working on deposition of chalcogenide perovskite thin films using molecular beam epitaxy.« less

Effect of nitrogen ion implantation on the structural and optical properties of indium oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sethi, Riti; Aziz, Anver; Siddiqui, Azher M., E-mail: amsiddiqui@jmi.ac.in

2016-06-10

: We report here synthesis and subsequent nitrogen ion implantation of indium oxide (In{sub 2}O{sub 3}) thin films. The films were implanted with 25 keV N{sup +} beam for different ion doses between 3E15 to 1E16 ions/cm{sup 2}. The resulting changes in structural and optical properties were investigated using XRD, SEM-EDAX and UV-Vis Spectrometry. XRD studies reveal decrease in crystallite size from 20.06 to 12.42 nm with increase in ion dose. SEM micrographs show an increase in the grain size from 0.8 to 1.35 µm with increase in ion dose because of the agglomeration of the grains. Also, from EDAXmore » data on pristine and N-implanted thin films the presence of indium and oxygen without any traces of impurity elements could be seen. However, at lower ion doses such as 3E15 and 5E15 ions/cm{sup 2}, no evidence of the presence of nitrogen ion was seen. However, for the ion dose of 1E16 ions/cm{sup 2}, evidence of presence of nitrogen can be seen in the EDAX data. Band gap calculations reveal a decrease in band gap from 3.54 to 3.38 eV with increasing ion dose. However, the band gap was found to again show an increase to 3.58 eV at the highest ion dose owing to quantum confinement effect.« less

Synthesis of cobalt doped BiFeO3 multiferroic thin films on p-Si substrate by sol-gel method

NASA Astrophysics Data System (ADS)

Prasannakumara, R.; Shrisha, B. V.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and cobalt doped BiFeO3 (BiFe1-xCoxO3) nanostructure thin films were grown on p-silicon substrates by sol-gel spin coating method with a sequence of coating and annealing process. The post-annealing of the grown films was carried out under high pure argon atmosphere. The grown nanostructure thin films were characterized using XRD, FESEM, and AFM for the structural, morphological and topological studies, respectively. The elemental compositions of the samples were studied by EDX spectra. The PL spectra of the grown sample shows a narrow emission peak around 559 nm which corresponds to the energy band gap of BFO thin films. The XRD peaks of the BiFeO3 nanostructure thin film reveals the rhombohedral structure and transformed from rhombohedral to orthorhombic or tetragonal structure in Co doped BiFeO3 thin films. The Co substitution in BiFeO3 helped to obtain higher dense nanostructure thin films with smaller grain size than the BiFeO3 thin films.

Towards colorless transparent organic transistors: potential of benzothieno[3,2-b]benzothiophene-based wide-gap semiconductors.

PubMed

Moon, Hanul; Cho, Hyunsu; Kim, Mincheol; Takimiya, Kazuo; Yoo, Seunghyup

2014-05-21

Colorless, highly transparent organic thin-film transistors (TOTFTs) with high performance are realized based on benzothieno[3,2-b]benzothiophene (BTBT) derivatives that simultaneously exhibit a wide energy gap and high transport properties. Multilayer transparent source/drain electrodes maintain the transparency, and ultrathin fluoropolymer dielectric layers enable stable, low-voltage operation of the proposed TOTFTs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organic Electronic Devices Using Crosslinked Polyelectrolyte Multilayers as an Ultra-Thin Dielectric Material

DTIC Science & Technology

2006-09-01

energy band diagram illustrating the allowed energies for valence and conducting electrons. The dashes within the band gap (Eg) represent localized ...allowed energies for valence and conducting electrons. The dashes within the band gap (Eg) represent localized electron energy states, or traps, that...been observed with the formation of alternating bond lengths along the backbone.43 The localization of the π-electrons while forming the shorter double

Onset of space charge effects in liquid argon ionization chambers

NASA Astrophysics Data System (ADS)

Toggerson, B.; Newcomer, A.; Rutherfoord, J.; Walker, R. B.

2009-09-01

Using a thin-gap liquid argon ionization chamber and Strontium-90 beta sources we have measured ionization currents over a wide range of gap potentials. These precision "HV plateau curves" advance the understanding of liquid argon sampling calorimeter signals, particularly at high ionization rates. The order of magnitude differences in the activities of the beta sources allow us to estimate where the ionization chamber is driven into the space-charge dominated regime.

Thin Disk Accretion in the Magnetically-Arrested State

NASA Astrophysics Data System (ADS)

Avara, Mark J.; McKinney, Jonathan; Reynolds, Christopher S.

2016-01-01

Shakura-Sunyaev thin disk theory is fundamental to black hole astrophysics. Though applications of the theory are wide-spread and powerful tools for explaining observations, such as Soltan's argument using quasar power, broadened iron line measurements, continuum fitting, and recently reverberation mapping, a significant large-scale magnetic field causes substantial deviations from standard thin disk behavior. We have used fully 3D general relativistic MHD simulations with cooling to explore the thin (H/R~0.1) magnetically arrested disk (MAD) state and quantify these deviations. This work demonstrates that accumulation of large-scale magnetic flux into the MAD state is possible, and then extends prior numerical studies of thicker disks, allowing us to measure how jet power scales with the disk state, providing a natural explanation of phenomena like jet quenching in the high-soft state of X-ray binaries. We have also simulated thin MAD disks with a misaligned black hole spin axis in order to understand further deviations from thin disk theory that may significantly affect observations.

Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S.

2016-05-06

Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

Nanophotonics: Energy Transfer towards Enhanced Luminescent Chemosensing

PubMed Central

Aad, Roy; Couteau, Christophe; Lérondel, Gilles

2015-01-01

We discuss a recently proposed novel photonic approach for enhancing the fluorescence of extremely thin chemosensing polymer layers. We present theoretical and experimental results demonstrating the concept of gain-assisted waveguided energy transfer (G-WET) on a very thin polymer nanolayer spincoated on an active ZnO thin film. The G-WET approach is shown to result in an 8-fold increase in polymer fluorescence. We then extend the G-WET concept to nanostructured media. The benefits of using active nanostructured substrates on the sensitivity and fluorescence of chemosensing polymers are discussed. Preliminary theoretical results on enlarged sensing surface and photonic band-gap are presented. PMID:28788025

Room temperature chemical synthesis of lead selenide thin films with preferred orientation

NASA Astrophysics Data System (ADS)

Kale, R. B.; Sartale, S. D.; Ganesan, V.; Lokhande, C. D.; Lin, Yi-Feng; Lu, Shih-Yuan

2006-11-01

Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH3COO)2 as Pb2+ and Na2SeSO3 as Se2- ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Xing, G. C.; Bachmann, K. J.; Posthill, J. B.; Timmons, M. L.

1991-01-01

Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

NASA Technical Reports Server (NTRS)

Choi, S. W.; Lucovsky, G.; Bachmann, Klaus J.

1993-01-01

Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

NASA Technical Reports Server (NTRS)

Choi, S. W.; Lucovsky, G.; Bachmann, K. J.

1992-01-01

Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Results of convective heating tests of a longitudinal gap on the Rockwell flat plate model (15-0, insert 7) in the NASA/Ames Research Center

NASA Technical Reports Server (NTRS)

Quan, M.; Lockman, W. K.

1975-01-01

Results are presented which were obtained from tests in a hypersonic wind tunnel to determine aerodynamic heating rates in a gap running parallel or slightly askew to the flow direction. The model used was a flat plate instrumented in thin-skin sections with chromelconstantan thermocouples. Heating rate profiles lengthwise along and down into the gap were obtained, and additional data were obtained from a total temperature probe and rake fabricated during the test to investigate an apparent aerodynamic cooling trend in the gap. Model variables were width, depth, length, and orientation of the gap relative to the flow direction. The tests were conducted at Mach 5.1 and Reynolds numbers per foot of 500,000, 1,000,000, and 2,000,000.

Spatial scale and sampling resolution affect measures of gap disturbance in a lowland tropical forest: implications for understanding forest regeneration and carbon storage

PubMed Central

Lobo, Elena; Dalling, James W.

2014-01-01

Treefall gaps play an important role in tropical forest dynamics and in determining above-ground biomass (AGB). However, our understanding of gap disturbance regimes is largely based either on surveys of forest plots that are small relative to spatial variation in gap disturbance, or on satellite imagery, which cannot accurately detect small gaps. We used high-resolution light detection and ranging data from a 1500 ha forest in Panama to: (i) determine how gap disturbance parameters are influenced by study area size, and the criteria used to define gaps; and (ii) to evaluate how accurately previous ground-based canopy height sampling can determine the size and location of gaps. We found that plot-scale disturbance parameters frequently differed significantly from those measured at the landscape-level, and that canopy height thresholds used to define gaps strongly influenced the gap-size distribution, an important metric influencing AGB. Furthermore, simulated ground surveys of canopy height frequently misrepresented the true location of gaps, which may affect conclusions about how relatively small canopy gaps affect successional processes and contribute to the maintenance of diversity. Across site comparisons need to consider how gap definition, scale and spatial resolution affect characterizations of gap disturbance, and its inferred importance for carbon storage and community composition. PMID:24452032

Lorelle Mansfield, Ph.D. | NREL

Science.gov Websites

)Se2 (CIGS) thin films for photovoltaic applications. In particular, she is developing rapid two-step content, and band gap grading. While at NREL, she has also deposited CIGS on novel substrates using low

High average power scaleable thin-disk laser

DOEpatents

Beach, Raymond J.; Honea, Eric C.; Bibeau, Camille; Payne, Stephen A.; Powell, Howard; Krupke, William F.; Sutton, Steven B.

2002-01-01

Using a thin disk laser gain element with an undoped cap layer enables the scaling of lasers to extremely high average output power values. Ordinarily, the power scaling of such thin disk lasers is limited by the deleterious effects of amplified spontaneous emission. By using an undoped cap layer diffusion bonded to the thin disk, the onset of amplified spontaneous emission does not occur as readily as if no cap layer is used, and much larger transverse thin disks can be effectively used as laser gain elements. This invention can be used as a high average power laser for material processing applications as well as for weapon and air defense applications.

Topological transitions induced by antiferromagnetism in a thin-film topological insulator

NASA Astrophysics Data System (ADS)

Yin, Gen; He, Qinglin; Yu, Luyan; Pan, Lei; Wang, Kang

Ferromagnetism introduced in topological insulators (TIs) opens a non-trivial exchange band gap, providing an exciting platform to control the topological order through an external magnetic field. The magnetization induces a topological transition that breaks time-reversal symmetry, resulting in anomalous Hall effects. Recently, it was experimentally shown that the surface of an antiferromagnetic (AFM) thin film can magnetize the surface Dirac fermions in a TI thin film similar to the case induced by ferromagnetism. Here, we show that when a TI thin film is sandwiched between two antiferromagnetic layers, an unsynchronized magnetic reversal introduces two intermediate spin configurations during the scan of the external field, resulting in a new topological phase with second Chern numbers. This topological phase introduces two counter-propagating chiral edge modes inside the exchange gap, changing the total number of transport channels drastically when the fermi level is close to the Dirac point. Induced by this change, the magnetoresistance of the channel presents an antisymmetric feature during the field scan. With the the help of the high ordering temperature of AFM layers, this transport signature of the phase transition persists up to 90K experimentally. This work is supported by (i) SHINES, an EFRC by US-DOE, Office of Science, BES, #SC0012670. (ii) US-NSF (DMR-1411085), (iii) ARO program W911NF-15-1-10561, and (iv) FAME Center in STARnet, an SRC program by MARCO and DARPA.

Low-temperature atomic layer deposition of CuSbS 2 for thin-film photovoltaics

DOE PAGES

Riha, Shannon C.; Koegel, Alexandra A.; Emery, Jonathan D.; ...

2017-01-24

Copper antimony sulfide (CuSbS 2) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (~1.5 eV), large absorption coefficient (>10 4 cm –1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) post process anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm –1, as wellmore » as a hole concentration of 10 15 cm –3. Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2/CdS heterojunction PV devices. As a result, while far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.« less

Topological superconductivity in an ultrathin, magnetically-doped topological insulator proximity coupled to a conventional superconductor

NASA Astrophysics Data System (ADS)

Kim, Youngseok; Philip, Timothy M.; Park, Moon Jip; Gilbert, Matthew J.

2016-12-01

As a promising candidate system to realize topological superconductivity, the system of a 3D topological insulator (TI) grown on top of the s -wave superconductor has been extensively studied. To access the topological superconductivity experimentally, the 3D TI sample must be thin enough to allow for Cooper pair tunneling to the exposed surface of TI. The use of magnetically ordered dopants to break time-reversal symmetry may allow the surface of a TI to host Majorana fermion, which are believed to be a signature of topological superconductivity. In this work, we study a magnetically-doped thin film TI-superconductor hybrid system. Considering the proximity induced order parameter in thin film of TI, we analyze the gap closing points of the Hamiltonian and draw the phase diagram as a function of relevant parameters: the hybridization gap, Zeeman energy, and chemical potential of the TI system. Our findings provide a useful guide in choosing relevant parameters to facilitate the observation of topological superconductivity in thin film TI-superconductor hybrid systems. In addition, we further perform numerical analysis on a TI proximity coupled to an s -wave superconductor and find that, due to the spin-momentum locked nature of the surface states in TI, the induced s -wave order parameter of the surface states persists even at large magnitude of the Zeeman energy.

Atomic-scale observation of structural and electronic orders in the layered compound α-RuCl3

PubMed Central

Ziatdinov, M.; Banerjee, A.; Maksov, A.; Berlijn, T.; Zhou, W.; Cao, H. B.; Yan, J.-Q.; Bridges, C. A.; Mandrus, D. G.; Nagler, S. E.; Baddorf, A. P.; Kalinin, S. V.

2016-01-01

A pseudospin-1/2 Mott phase on a honeycomb lattice is proposed to host the celebrated two-dimensional Kitaev model which has an elusive quantum spin liquid ground state, and fascinating physics relevant to the development of future templates towards topological quantum bits. Here we report a comprehensive, atomically resolved real-space study by scanning transmission electron and scanning tunnelling microscopies on a novel layered material displaying Kitaev physics, α-RuCl3. Our local crystallography analysis reveals considerable variations in the geometry of the ligand sublattice in thin films of α-RuCl3 that opens a way to realization of a spatially inhomogeneous magnetic ground state at the nanometre length scale. Using scanning tunnelling techniques, we observe the electronic energy gap of ≈0.25 eV and intra-unit cell symmetry breaking of charge distribution in individual α-RuCl3 surface layer. The corresponding charge-ordered pattern has a fine structure associated with two different types of charge disproportionation at Cl-terminated surface. PMID:27941761

Atomic-scale observation of structural and electronic orders in the layered compound α-RuCl3.

PubMed

Ziatdinov, M; Banerjee, A; Maksov, A; Berlijn, T; Zhou, W; Cao, H B; Yan, J-Q; Bridges, C A; Mandrus, D G; Nagler, S E; Baddorf, A P; Kalinin, S V

2016-12-12

A pseudospin-1/2 Mott phase on a honeycomb lattice is proposed to host the celebrated two-dimensional Kitaev model which has an elusive quantum spin liquid ground state, and fascinating physics relevant to the development of future templates towards topological quantum bits. Here we report a comprehensive, atomically resolved real-space study by scanning transmission electron and scanning tunnelling microscopies on a novel layered material displaying Kitaev physics, α-RuCl 3 . Our local crystallography analysis reveals considerable variations in the geometry of the ligand sublattice in thin films of α-RuCl 3 that opens a way to realization of a spatially inhomogeneous magnetic ground state at the nanometre length scale. Using scanning tunnelling techniques, we observe the electronic energy gap of ≈0.25 eV and intra-unit cell symmetry breaking of charge distribution in individual α-RuCl 3 surface layer. The corresponding charge-ordered pattern has a fine structure associated with two different types of charge disproportionation at Cl-terminated surface.

Atomic-scale observation of structural and electronic orders in the layered compound α-RuCl 3

DOE PAGES

Ziatdinov, Maxim A.; Banerjee, Arnab; Maksov, Artem B.; ...

2016-12-12

A pseudospin-1/2 Mott phase on a honeycomb lattice is proposed to host the celebrated two-dimensional Kitaev model which has an elusive quantum spin liquid ground state, and fascinating physics relevant to the development of future templates towards topological quantum bits. Here we report a comprehensive, atomically resolved real-space study by scanning transmission electron and scanning tunnelling microscopies on a novel layered material displaying Kitaev physics, -RuCl3. Our local crystallography analysis reveals considerable variations in the geometry of the ligand sublattice in thin films of -RuCl3 that opens a way to realization of a spatially inhomogeneous magnetic ground state at themore » nanometre length scale. Using scanning tunnelling techniques, we observe the electronic energy gap of 0.25 eV and intra-unit cell symmetry breaking of charge distribution in individual -RuCl3 surface layer. The corresponding charge-ordered pattern has a fine structure associated with two different types of charge disproportionation at Cl-terminated surface.« less

Atomically precise lateral modulation of a two-dimensional electron liquid in anatase TiO 2 thin films

DOE PAGES

Wang, Zhiming; Zhong, Z.; Walker, S. McKeown; ...

2017-03-10

Engineering the electronic band structure of two-dimensional electron liquids (2DELs) confined at the surface or interface of transition metal oxides is key to unlocking their full potential. Here we describe a new approach to tailoring the electronic structure of an oxide surface 2DEL demonstrating the lateral modulation of electronic states with atomic scale precision on an unprecedented length scale comparable to the Fermi wavelength. To this end, we use pulsed laser deposition to grow anatase TiO 2 films terminated by a (1 x 4) in-plane surface reconstruction. Employing photo-stimulated chemical surface doping we induce 2DELs with tunable carrier densities thatmore » are confined within a few TiO 2 layers below the surface. Subsequent in situ angle resolved photoemission experiments demonstrate that the (1 x 4) surface reconstruction provides a periodic lateral perturbation of the electron liquid. Furthermore, this causes strong backfolding of the electronic bands, opening of unidirectional gaps and a saddle point singularity in the density of states near the chemical potential.« less

Vapour phase techniques for deposition of CZTS thin films: A review

NASA Astrophysics Data System (ADS)

Kaur, Ramanpreet; Kumar, Sandeep; Singh, Sukhpal

2018-05-01

With the surge of thin film photovoltaic technologies in recent years, for cost reduction and increased production there is a need for earth abundant and non-toxic raw materials. Existing thin film solar cells comprising CuInS2 (CIS), CuInGaSe2 (CIGS) and CdTe contain elements that are rare in earth's crust and in case of CdTe toxic. Cu2ZnSnS4 (CZTS), having Kesterite structure, a direct band gap of 1.4 - 1.5 eV and an absorption coefficient of 104 cm-1 makes a promising candidate for absorber layer in thin film solar cells. So far many physical and chemical techniques have been employed for deposition of CZTS thin films. This review focuses on various vapour phase techniques used for fabrication of films, recent advances in these techniques and their future outlook.

Influence of substrate temperature and post annealing of CuGaO{sub 2} thin films on optical and structural properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakar, Muhammad Hafiz Abu; Li, Lam Mui; Salleh, Saafie

A transparent p-type thin film CuGaO{sub 2} was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10{sup −2} Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. Themore » details of the results will be discussed in the conference.« less

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

NASA Astrophysics Data System (ADS)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Development of nanostructured ZnO thin film via electrohydrodynamic atomization technique and its photoconductivity characteristics.

PubMed

Duraisamy, Navaneethan; Kwon, Ki Rin; Jo, Jeongdai; Choi, Kyung-Hyun

2014-08-01

This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.

Applications of Thin Film Thermocouples for Surface Temperature Measurement

NASA Technical Reports Server (NTRS)

Martin, Lisa C.; Holanda, Raymond

1994-01-01

Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

Wafer-scale growth of highly textured piezoelectric thin films by pulsed laser deposition for micro-scale sensors and actuators

NASA Astrophysics Data System (ADS)

Nguyen, M. D.; Tiggelaar, R.; Aukes, T.; Rijnders, G.; Roelof, G.

2017-11-01

Piezoelectric lead-zirconate-titanate (PZT) thin films were deposited on 4-inch (111)Pt/Ti/SiO2/Si(001) wafers using large-area pulsed laser deposition (PLD). This study was focused on the homogeneity in film thickness, microstructure, ferroelectric and piezoelectric properties of PZT thin films. The results indicated that the highly textured (001)-oriented PZT thin films with wafer-scale thickness homogeneity (990 nm ± 0.8%) were obtained. The films were fabricated into piezoelectric cantilevers through a MEMS microfabrication process. The measured longitudinal piezoelectric coefficient (d 33f = 210 pm/V ± 1.6%) and piezoelectric transverse coefficient (e 31f = -18.8 C/m2 ± 2.8%) were high and homogeneity across wafers. The high piezoelectric properties on Si wafers will extend industrial application of PZT thin films and further development of piezoMEMS.

Mesoscopic Fluctuations for the Thinned Circular Unitary Ensemble

NASA Astrophysics Data System (ADS)

Berggren, Tomas; Duits, Maurice

2017-09-01

In this paper we study the asymptotic behavior of mesoscopic fluctuations for the thinned Circular Unitary Ensemble. The effect of thinning is that the eigenvalues start to decorrelate. The decorrelation is stronger on the larger scales than on the smaller scales. We investigate this behavior by studying mesoscopic linear statistics. There are two regimes depending on the scale parameter and the thinning parameter. In one regime we obtain a CLT of a classical type and in the other regime we retrieve the CLT for CUE. The two regimes are separated by a critical line. On the critical line the limiting fluctuations are no longer Gaussian, but described by infinitely divisible laws. We argue that this transition phenomenon is universal by showing that the same transition and their laws appear for fluctuations of the thinned sine process in a growing box. The proofs are based on a Riemann-Hilbert problem for integrable operators.

The influence of the periodontal biotype on peri-implant tissues around immediate implants with and without xenografts. Clinical and micro-computerized tomographic study in small Beagle dogs.

PubMed

Maia, Luciana P; Reino, Danilo M; Muglia, Valdir A; de Souza, Sérgio L S; Palioto, Daniela B; Novaes, Arthur B

2015-01-01

Soft tissues and buccal bone plate remodeling after immediate implantation in sockets with thin buccal bone, using the flapless approach with or without bone graft into the buccal gap, was compared between sites with thin and normal gingiva. Eight dogs had the gingiva of one side of the mandible thinned, the mandibular premolars were extracted without flaps, and 4 implants were installed in each side, positioned 1.5 mm from the buccal bone. The sites were randomly assigned into: TG (test group) = thin gingiva; TG + GM (TG with grafting material); CG (control group) = normal gingiva; and CG + GM (CG with grafting material). Buccal bone thickness (BBT), thickness of keratinized tissue (TKT), alveolar thickness (AT), gingival recession (GR), and probing depth (PD) were clinically evaluated. Within 12 weeks the dogs were sacrificed and the samples were analyzed by micro-computerized tomography. A thin BBT was observed in all the dogs. The presurgical procedures reduced TKT in the test group, with minimal changes of the AT. There were no statistically significant differences among the groups for the clinical parameters and the tomographic analysis showed similar linear and tri-dimensional bone reduction in all the groups. The thickness of the buccal bone was a fundamental factor in buccal bone plate resorption, even with flapless implantation. The decrease in gingival thickness or the addition of a biomaterial in the gap did not influence the results. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Electrodeposition of CdTe thin film from acetate-based ionic liquid bath

NASA Astrophysics Data System (ADS)

Waldiya, Manmohansingh; Bhagat, Dharini; Mukhopadhyay, Indrajit

2018-05-01

CdTe being a direct band gap semiconductor, is mostly used in photovoltaics. Here we present, the synthesis of CdTe thin film on fluorine doped tin oxide (FTO) substrate potentiostatically using 1-butyl-3-methylimidazolium acetate ([Bmim][Ac]) ionic liquid (IL) bath at 90 °C. Major advantages of using electrodeposition involves process simplicity, large scalability & economic viability. Some of the benefits offered by IL electrolytic bath are low vapour pressure, wide electrochemical window, and good ionic mobility. Cd(CH3COO)2 (anhydrous) and TeO2 were used as the source precursors. The IL electrolytic bath temperature was kept at 90 °C for deposition, owing to the limited solubility of TeO2 in [Bmim][Ac] IL at room temperature. Cathodic electrodeposition was carried out using a three electrode cell setup at a constant potential of -1.20 V vs. platinum (Pt) wire. The CdTe/FTO thin film were annealed in argon (Ar) atmosphere. Optical study of nanostructured CdTe film were done using UV-Vis-IR and Raman spectroscopy. Raman analysis confirms the formation of CdTe having surface optics (SO) mode at 160.6 cm-1 and transverse optics (TO) mode at 140.5 cm-1. Elemental Te peaks at 123, 140.5 and 268 cm-1 were also observed. The optical band gap of Ar annealed CdTe thin film were found to be 1.47 eV (absorbance band edge ˜ 846 nm). The optimization of deposition parameters using acetate-based IL electrolytic bath to get nearly stoichiometric CdTe thin film is currently being explored.

Performance evaluation of thin wearing courses through scaled accelerated trafficking.

DOT National Transportation Integrated Search

2014-01-01

The primary objective of this study was to evaluate the permanent deformation (rutting) and fatigue performance of : several thin asphalt concrete wearing courses using a scaled-down accelerated pavement testing device. The accelerated testing : was ...

Performance Evaluation of Thin Wearing Courses Through Scaled Accelerated Trafficking.

DOT National Transportation Integrated Search

2014-01-01

"The primary objective of this study was to evaluate the permanent deformation (rutting) and fatigue performance of : several thin asphalt concrete wearing courses using a scaled-down accelerated pavement testing device. The accelerated testing : was...

Effect of aluminium doping on structural and optical properties of ZnO thin films by sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayaprasath, G.; Murugan, R.; Ravi, G., E-mail: raviganesa@rediffmail.com, E-mail: gravicrc@gmail.com

2015-06-24

We systematically investigated the structural, morphological and optical properties of 0.05 mol % Al doped ZnO (Al:ZnO) thin films deposited on glass substrates by sol-gel spin coating method. The influences of Al doping in ZnO thin films are characterized by Powder X-ray diffraction study. ZnO and Al:ZnO thin films have showed hexagonal wurtzite structure without any secondary phase in c-axis (002) orientation. The SEM images also proved the hexagonal rod like morphologies for both films. All the films exhibited transmittance of 70-80% in the visible range up to 800 nm and cut-off wavelength observed at ∼390 nm corresponding to the fundamental absorption ofmore » ZnO. The band gap of the ZnO thin films slightly widened with the Al doping. The photoluminescence properties have been studied for Al: ZnO thin films and the results are presented in detail.« less

Synthesis and characterization of structural, morphological and photosensor properties of Cu0.1Zn0.9S thin film prepared by a facile chemical method

NASA Astrophysics Data System (ADS)

Gubari, Ghamdan M. M.; Ibrahim Mohammed S., M.; Huse, Nanasaheb P.; Dive, Avinash S.; Sharma, Ramphal

2018-05-01

The Cu0.1Zn0.9S thin film was grown by facile chemical bath deposition (CBD) method on glass substrates at 60°C. The structural, morphological, photosensor properties of the as-grown thin film has been investigated. The structural and phase confirmation of the as-grown thin film was carried out by X-ray diffraction (XRD) technique and Raman spectroscopy. The FE-SEM images showed that the thin films are well covered with material on an entire glass substrate. From the optical absorption spectrum, the direct band gap energy for the Cu0.1Zn0.9S thin film was found to be ˜3.16 eV at room temperature. The electrical properties were measured at room temperature in the voltage range ±2.5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ˜72 % for 260 W.

Ultra-thin, light-trapping silicon solar cells

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.

1989-01-01

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Morphological, elemental, and optical characterization of plasma polymerized n-butyl methacrylate thin films

NASA Astrophysics Data System (ADS)

Nasrin, Rahima; Hossain, Khandker S.; Bhuiyan, A. H.

2018-05-01

Plasma polymerized n-butyl methacrylate (PPnBMA) thin films of varying thicknesses were prepared at room temperature by AC plasma polymerization system using a capacitively coupled parallel plate reactor. Field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), energy-dispersive X-ray (EDX) analysis, and ultraviolet-visible (UV-Vis) spectroscopic investigation have been performed to study the morphological, elemental, and optical properties of the PPnBMA thin films, respectively. The flat and defect-free nature of thin films were confirmed by FESEM and AFM images. With declining plasma power, average roughness and root mean square roughness increase. Allowed direct transition ( E gd) and indirect transition ( E gi) energy gaps were found to be 3.64-3.80 and 3.38-3.45 eV, respectively, for PPnBMA thin films of different thicknesses. Values of E gd as well as E gi increase with the increase of thickness. The extinction coefficient, Urbach energy, and steepness parameter were also determined for these thin films.

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

PubMed

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

2018-03-28

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

Electrochemical Atomic Layer Epitaxy of Thin Film CdSe

NASA Astrophysics Data System (ADS)

Pham, L.; Kaleida, K.; Happek, U.; Mathe, M. K.; Vaidyanathan, R.; Stickney, J. L.; Radevic, M.

2002-10-01

Electrochemical atomic layer epitaxy (EC-ALE) is a current developmental technique for the fabrication of compound semiconductor thin films. The deposition of elements making up the compound utilizes surface limited reactions where the potential is less than that required for bulk growth. This growth method offers mono-atomic layer control, allowing the deposition of superlattices with sharp interfaces. Here we report on the EC-ALE formation of CdSe thin films on Au and Cu substrates using an automated flow cell system. The band gap was measured using IR absorption and photoconductivity and found to be consistent with the literature value of 1.74 eV at 300K and 1.85 eV at 20K. The stoichiometry of the thin film was confirmed with electron microprobe analysis and x-ray diffraction.

Fabrication and characterization of nickel oxide nanoparticles/silicon NiO NPS/Si

NASA Astrophysics Data System (ADS)

Shuihab, Aliyah; Khalf, Surour

2018-05-01

In this study, (NiO) thin film which prepared by chemical method and deposited by drop casting technique on glass. The structural, optical and chemical analyses have been investigated. X-ray diffraction (XRD) measurements relieve that the (NiO) thin film was polycrystalline, cubic structure and there is no trace of the other material. UV-Vis measurements reveal that the energy gap of (NiO) thin film was found 1.8 eV. The Fourier Transform Infrared Spectroscopy (FTIR) spectrum of (NiO) thin film shows NiO nanoparticles had its IR peak of Ni-O stretching vibration and shifted to blue direction. Due to their quantum size effect and spherical nanostructures, the FTIR absorption of NiO nanoparticles is blue-shifted compared to that of the bulk form.

The Role of Partial Surface Charge Compensation in the Properties of Ferroelectric and Antiferroelectric Thin Films

NASA Astrophysics Data System (ADS)

Swedberg, Elena

Ferroelectric and antiferroelectric ultrathin films have attracted a lot of attention recently due to their remarkable properties and their potential to allow for device miniaturization in numerous applications. However, when the ferroelectric films are scaled down, it brings about an unavoidable depolarizing field. A partial surface charge compensation allows to control the residual depolarizing field and manipulate the properties of ultrathin ferroelectric films. In this dissertation we take advantage of atomistic first-principles-based simulations to expand our understanding of the role of the partial surface charge compensation in the properties of ferroelectric and antiferroelectric ultrathin films. The application of our computational methodology to study the effect of the partial surface charge compensation in ferroelectric ultrathin films led to the prediction that, depending on the quality of the surface charge compensation, ferroelectric thin films respond to an electric field in a qualitatively different manner. They can be tuned to behave like a linear dielectric, a ferroelectric or even an antiferroelectric. This effect was shown to exist in films with different mechanical boundary conditions and different crystal symmetries. There are a number of potential applications where such properties of ferroelectric thin films can be used. One of these potential applications is energy storage. We will show that, in the antiferroelectric regime, ferroelectric thin films exhibit drastic enhancement of energy storage density which is a desirable property. One of the most promising applications of ferroelectric ultrathin films that emerged only recently is the harvesting of the giant electrocaloric effect. Interestingly, despite numerous studies of the electrocaloric effect in ferroelectric thin films, it is presently unknown how a residual depolarizing field affects the electrocaloric properties of such films. Application of state-of-the-art computational methods to investigate the electrocaloric effect in ferroelectric films with partial surface charge compensation led to the prediction that the residual depolarizing field can perform a dual role in the electrocaloric effect in these films. When the depolarizing field creates competition between the monodomain and nanodomain states, we predict an enhancement of the electrocaloric effect due to the frustration that increases the entropy of the state and therefore the electrocaloric temperature change. On the other hand, when the depolarizing field leads to a formation of nanodomains, thin films either exhibit a small electrocaloric effect or lose their electrocaloric properties altogether to the irreversible nanodomain motion. When the residual depolarizing field is weak enough to permit the formation of monodomain phases, the electrocaloric effect is significantly reduced as compared to bulk. We believe that our findings could potentially reveal additional opportunities to optimize solid state cooling technology. While the electrocaloric effect has been a popular topic of interest in recent years [12], there still exists numerous gaps in the fundamental understanding of the effect. In particular, it is presently unknown whether the scaling laws, known to exist for magnetocaloric materials, can be applied to ferroelectric and antiferroelectric electrocalorics. We predict the existence of scaling laws for low-field electrocaloric temperature change in antiferroelectric and ferroelectric materials. With the help of first-principles-based simulations, we showed computationally that the scaling laws exist for antiferroelectric PbZrO3 along with ferroelectrics PbTiO3, BaTiO 3 and KNbO3. Additional evidence of the scaling laws existence are provided using experimental data from the literature. Interestingly, our studies on ferroelectric films predicted the existence of antiferroelectric behavior in ultrathin films with partial surface charge compensation. One may wonder whether it is possible to stabilize the ferroelectric phase in antiferroelectric films and what role the surface charge screening would play in such a transition. Motivated to address these fundamental questions, we used computational experiments to study antiferroelectric ultrathin films with a residual depolarizing field. Our studies led to the following predictions. We found that PbZrO3 thin films exhibit the ferroelectric phase upon scaling down and under the condition of efficient surface charge compensation. We also found a strong competition between the antiferroelectric and ferroelectric phases for the thin films of the critical size associated with antiferroelectric-ferroelectric phase transition. This finding motivated us to study the electrocaloric effect in PbZrO3 thin films with antiferroelectric-ferroelectric phase competition. We found that high tunability of the phase transition by the electric field leads to a wide range of temperatures associated with a strong electrocaloric effect. In addition, we found that epitaxial strain provides further tunability to the electrocaloric properties. In summary, our studies led to a broader and deeper understanding of the abundantly many roles surface charge compensation plays in ultrathin ferroelectrics and antiferroelectrics.

Theoretical and Experimental Evidence for a Nodal Energy Gap in MgB2

DTIC Science & Technology

2017-02-17

1   Theoretical and Experimental Evidence for a Nodal Energy Gap in MgB2 Y. Dan Agassia and Daniel E. Oatesb aConsultant, Jerusalem, Israel bMIT...surface impedance and intermodulation distortion in high-quality thin films. We briefly review experimental evidence in support of our hypothesis and...demonstrates, this experimental evidence agrees with the l = 6 hypothesis, while inconsistent with s-wave symmetry. To give the l = 6 hypothesis a

Stabilization of Wide Band-Gap p-Type Wurtzite MnTe Thin Films on Amorphous Substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zakutayev, Andriy A; Siol, Sebastian; Han, Yanbing

An important challenge in the development of optoelectronic devices for energy conversion applications is the search for suitable p-type contact materials. For example, p-type MnTe would be a promising alternative back contact to due to their chemical compatibility, but at normal conditions it has too narrow band gap due to octahedrally coordinated nickeline (NC) structure. The tetrahedrally coordinated wurtzite (WZ) polymorph of MnTe has not been reported, but it is especially interesting due to its predicted wider band gap, and because of better structural compatibility with CdTe and related II-VI semiconductor materials. Here, we report on the stabilization of WZ-MnTemore » thin films on amorphous indium zinc oxide (a-IZO) substrates relevant to photovoltaic applications. Optical spectroscopy of the WZ-MnTe films shows a wide direct band gap of Eg = 2.7 eV, while PES measurements reveal weak p-type doping with the Fermi level 0.6 eV above the valence band maximum. The results of electron microscopy and photoelectron spectroscopy (PES) measurements indicate that the WZ-MnTe is stabilized due to interdiffusion at the interface with IZO. The results of this work introduce a substrate stabilized WZ-MnTe polymorph as a potential p-type contact material candidate for future applications in CdTe devices for solar energy conversion and other optoelectronic technologies.« less

Three-dimensional reconstruction of root cells and interdental cells in the rat inner ear by serial section scanning electron microscopy.

PubMed

Shodo, Ryusuke; Hayatsu, Manabu; Koga, Daisuke; Horii, Arata; Ushiki, Tatsuo

2017-01-01

In the cochlea, a high K + environment in the endolymph is essential for the maintenance of normal hearing function, and the transport of K + ions through gap junctions of the cochlear epithelium is thought to play an important role in endolymphatic homeostasis. The aim of the present study was to demonstrate the three-dimensional (3D) ultrastructure of spiral ligament root cells and interdental cells, which are located at both ends of the gap junction system of the cochlea epithelium. Serial semi-thin sections of plastic-embedded rat cochlea were mounted on glass slides, stained with uranyl acetate and lead citrate, and observed by scanning electron microscopy (SEM) using the backscattered electron (BSE) mode. 3D reconstruction of BSE images of serial sections revealed that the root cells were linked together to form a branched structure like an elaborate "tree root" in the spiral ligament. The interdental cells were also connected to each other, forming a comb-shaped cellular network with a number of cellular strands in the spiral limbus. Furthermore, TEM studies of ultra-thin sections revealed the rich presence of gap junctions in both root cells and interdental cells. These findings suggest the possibility that both root cells and interdental cells contribute to K + circulation as the end portion of the epithelial cell gap junction system of the cochlea.

Structural studies of n-type nc-Si-QD thin films for nc-Si solar cells

NASA Astrophysics Data System (ADS)

Das, Debajyoti; Kar, Debjit

2017-12-01

A wide optical gap nanocrystalline silicon (nc-Si) dielectric material is a basic requirement at the n-type window layer of nc-Si solar cells in thin film n-i-p structure on glass substrates. Taking advantage of the high atomic-H density inherent to the planar inductively coupled low-pressure (SiH4 + CH4)-plasma, development of an analogous material in P-doped nc-Si-QD/a-SiC:H network has been tried. Incorporation of C in the Si-network extracted from the CH4 widens the optical band gap; however, at enhanced PH3-dilution of the plasma spontaneous miniaturization of the nc-Si-QDs below the dimension of Bohr radius (∼4.5 nm) further enhances the band gap by virtue of the quantum size effect. At increased flow rate of PH3, dopant induced continuous amorphization of the intrinsic crystalline network is counterbalanced by the further crystallization promoted by the supplementary atomic-H extracted from PH3 (1% in H2) in the plasma, eventually holding a moderately high degree of crystallinity. The n-type wide band gap (∼1.93 eV) window layer with nc-Si-QDs in adequate volume fraction (∼52%) could furthermore be instrumental as an effective seed layer for advancing sequential crystallization in the i-layer of nc-Si solar cells with n-i-p structure in superstrate configuration.

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

NASA Astrophysics Data System (ADS)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

Theoretical and experimental evidence for a nodal energy gap in MgB2

NASA Astrophysics Data System (ADS)

Agassi, Y. Dan; Oates, Daniel E.

2017-11-01

We present a phenomenological model that strongly suggests that the smaller of the two energy gaps in MgB2, the so-called π gap, contains nodal lines with a six-fold symmetry (i-wave). The model also indicates that the larger gap, the so-called σ gap, is conventional s-wave. The model is an extension of the BCS gap equation that accounts for the elastic anisotropy in MgB2 and the Coulomb repulsion. It is based on a phononic pairing mechanism and assumes no coupling between the two energy gaps in MgB2 at zero temperature. All of the parameters of the model, such as sound velocities and masses, are independently determined material constants. The results agree with a previous ad-hoc hypothesis that the π energy gap has six nodal lines. That hypothesis was motivated by low-temperature measurements of the surface impedance and intermodulation distortion in high-quality thin films. We briefly review experimental evidence in the literature that is relevant to the energy-gap symmetry. We find that the evidence from the literature for s-wave is inconclusive. Our finding is that the π gap has six nodal lines.

Himalayan glaciers: understanding contrasting patterns of glacier behavior using multi-temporal satellite imagery

NASA Astrophysics Data System (ADS)

Racoviteanu, A.

2014-12-01

High rates of glacier retreat for the last decades are often reported, and believed to be induced by 20th century climate changes. However, regional glacier fluctuations are complex, and depend on a combination of climate and local topography. Furthermore, in ares such as the Hindu-Kush Himalaya, there are concerns about warming, decreasing monsoon precipitation and their impact on local glacier regimes. Currently, the challenge is in understanding the magnitude of feedbacks between large-scale climate forcing and small-scale glacier behavior. Spatio-temporal patterns of glacier distribution are still llimited in some areas of the high Hindu-Kush Himalaya, but multi-temporal satellite imagery has helped fill spatial and temporal gaps in regional glacier parameters in the last decade. Here I present a synopsis of the behavior of glaciers across the Himalaya, following a west to east gradient. In particular, I focus on spatial patterns of glacier parameters in the eastern Himalaya, which I investigate at multi-spatial scales using remote sensing data from declassified Corona, ASTER, Landsat ETM+, Quickbird and Worldview2 sensors. I also present the use of high-resolution imagery, including texture and thermal analysis for mapping glacier features at small scale, which are particularly useful in understanding surface trends of debris-covered glaciers, which are prevalent in the Himalaya. I compare and contrast spatial patterns of glacier area and élévation changes in the monsoon-influenced eastern Himalaya (the Everest region in the Nepal Himalaya and Sikkim in the Indian Himalaya) with other observations from the dry western Indian Himalaya (Ladakh and Lahul-Spiti), both field measurements and remote sensing-based. In the eastern Himalaya, results point to glacier area change of -0.24 % ± 0.08% per year from the 1960's to the 2006's, with a higher rate of retreat in the last decade (-0.43% /yr). Debris-covered glacier tongues show thinning trends of -30.8 m± 39 m on average over the last four decades, similar to other studies in the same climatic area. However, at small scales, the behavior of glaciers is highly heterogenous, with contrasting patterns of thickening glacier termini versus retreating nad thinning glacier tongues.

Magnetocrystalline anisotropy of ɛ-Fe2O3

NASA Astrophysics Data System (ADS)

Ahamed, Imran; Pathak, Rohit; Skomski, Ralph; Kashyap, Arti

2018-05-01

The epsilon Fe2O3 phase of iron oxide has been studied to understand the spin structure and the magnetocrystalline anisotropy in the bulk and in thin films of ɛ-Fe2O3 and Co-doped ɛ-Fe2O3. The preferential magnetization direction in the nanoparticles of ɛ-Fe2O3 is along the a-axis [M. Gich et al., Chem. Mater. 18, 3889 (2006)]. Compared to the bulk band gap of 1.9 eV, the thin-film band gap is reduced to 1.3 eV in the Co-free films and to 0.7 eV in the film with partial Co substitution. The easy magnetization direction of the bulk and Co-free ɛ-Fe2O3 is along the c-axis, but it switches to the a-axis on Co substitution. All three systems exhibit in-plane anisotropies associated with the orthorhombic crystal structure of the oxide.

Statistical Origin of the Meyer-Neldel Rule in Amorphous Semiconductor Thin Film Transistors

NASA Astrophysics Data System (ADS)

Kikuchi, Minoru

1990-09-01

The origin of the Meyer-Neldel (MN) rule [G0{\\propto}\\exp (AEσ)] in the dc conductance of amorphous semiconductor thin-film transistors (TFT) is investigated based on the statistical model. We analyzed the temperature derivative of the band bending energy eVs(T) at the semiconductor interface as a function of Vs. It is shown that the condition for the validity of the rule, i.e., the linearity of the derivative deVs/dkT to Vs, certainly holds as a natural consequence of the interplay between the steep tail states and the low gap density of states spectrum. An expression is derived which relates the parameter A in the rule to the gap states spectrum. Model calculations show a magnitude of A in fair agreement with the experimental observations. The effects of the Fermi level position and the magnitude of the midgap density of states are also discussed.

Effect of variation in indium concentration on the photosensitivity of chlorine doped In{sub 2}S{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherian, Angel Susan; Kartha, C. Sudha; Vijayakumar, K. P.

2014-01-28

Consequence of variation in Indium concentration in chlorine doped In2S{sub 3} thin films deposited by spray pyrolysis technique was studied. Chlorine was incorporated in the spray solution, using HCl and Indium concentration was varied by adjusting In/S ratio Interestingly, the photo response of all chlorine doped samples augmented compared to pristine samples; but the highest photosensitivity value of ∼2300 was obtained only when 36ml 0.5M HCl was added to the solution of In{sub 2}S{sub 3} having In/S=2/8. It was also observed that samples with high photosensitivity possess higher band gap and variation in sub band gap absoption levels were observedmore » with increase in Indium concentration. The present study proved that concentration of Indium plays an important role in controlling the crystallinity and photosensitivity of chlorine doped samples.« less

High-Efficiency Polycrystalline Thin Film Tandem Solar Cells.

PubMed

Kranz, Lukas; Abate, Antonio; Feurer, Thomas; Fu, Fan; Avancini, Enrico; Löckinger, Johannes; Reinhard, Patrick; Zakeeruddin, Shaik M; Grätzel, Michael; Buecheler, Stephan; Tiwari, Ayodhya N

2015-07-16

A promising way to enhance the efficiency of CIGS solar cells is by combining them with perovskite solar cells in tandem devices. However, so far, such tandem devices had limited efficiency due to challenges in developing NIR-transparent perovskite top cells, which allow photons with energy below the perovskite band gap to be transmitted to the bottom cell. Here, a process for the fabrication of NIR-transparent perovskite solar cells is presented, which enables power conversion efficiencies up to 12.1% combined with an average sub-band gap transmission of 71% for photons with wavelength between 800 and 1000 nm. The combination of a NIR-transparent perovskite top cell with a CIGS bottom cell enabled a tandem device with 19.5% efficiency, which is the highest reported efficiency for a polycrystalline thin film tandem solar cell. Future developments of perovskite/CIGS tandem devices are discussed and prospects for devices with efficiency toward and above 27% are given.

Magnetically insulated transmission line oscillator

DOEpatents

Bacon, Larry D.; Ballard, William P.; Clark, M. Collins; Marder, Barry M.

1988-01-01

A magnetically insulated transmission line oscillator employs self-generated magnetic fields to generate microwave energy. An anode of the oscillator includes slow-wave structures which are formed of a plurality of thin conductive vanes defining cavities therebetween, and a gap is formed between the anode and a cathode of the oscillator. In response to a pulsed voltage applied to the anode and cathode, self-generated magnetic fields arfe produced in a cross-field orientation with respect to the orientation of the electric field between the anode and the cathode. The cross-field magnetic fields insulate the flow of electrons in the gap and confine the flow of electrons within the gap.

Magnetically insulated transmission line oscillator

DOEpatents

Bacon, L.D.; Ballard, W.P.; Clark, M.C.; Marder, B.M.

1987-05-19

A magnetically insulated transmission line oscillator employs self-generated magnetic fields to generate microwave energy. An anode of the oscillator includes slow-wave structures which are formed of a plurality of thin conductive vanes defining cavities therebetween, and a gap is formed between the anode and a cathode of the oscillator. In response to a pulsed voltage applied to the anode and cathode, self-generated magnetic fields are produced in a cross-field orientation with respect to the orientation of the electric field between the anode and the cathode. The cross-field magnetic fields insulate the flow of electrons in the gap and confine the flow of electrons within the gap. 11 figs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Xiaoyu; Shetty, Smitha; Garten, Lauren

Dielectric and piezoelectric properties for Zn 1-xMg xO (ZMO) thin films are reported as a function of MgO composition up to and including the phase separation region. Zn 1-xMg xO (0.25 ≤ x ≤ 0.5) thin films with c-axis textures were deposited by pulsed laser deposition on platinized sapphire substrates. The films were phase pure wurtzite for MgO concentrations up to 40%; above that limit, a second phase with rocksalt structure evolves with strong {100} texture. With increasing MgO concentration, the out-of-plane ( d33,f) and in-plane ( e31,f) piezoelectric coefficients increase by 360% and 290%, respectively. The increase in piezoelectricmore » coefficients is accompanied by a 35% increase in relative permittivity. Loss tangent values fall monotonically with increasing MgO concentration, reaching a minimum of 0.001 for x ≥ 0.30, at which point the band gap is reported to be 4 eV. As a result, the enhanced piezoelectric response, the large band gap, and the low dielectric loss make Zn 1-xMg xO an interesting candidate for thin film piezoelectric devices, and demonstrate that compositional phase transformations provide opportunities for property engineering.« less

Growth and characterization of single crystalline Zn0.8-xMg0.2AlxO films with UV band gap on GaN/Al2O3 template by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kim, Min-Sung; Lee, Byung-Teak

2013-02-01

Single crystalline Zn0.8-xMg0.2AlxO thin films were grown on a GaN/Al2O3 template. As the Al content is increased from 0 to 0.06, the optical band gap increased from 3.6 eV to 4.0 eV, growth rate decreased from 6 nm/min to 3 nm/min, and the surface roughness decreased from 17 nm to 0.8 nm. It was observed that interfacial layers were formed between the thin films and the substrates, identified as cubic MgAl2O4 in the case of ZnMgAlO/GaN and cubic MgO in the case of ZnMgO/GaN. It was proposed that the MgAl2O4 layer, with low lattice mismatch of ˜7% against the GaN substrate, acted as the buffer layer to correlate the film and the substrate, resulting in growth of the single crystalline thin films in the case of the ZnMgAlO/GaN system.

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

NASA Astrophysics Data System (ADS)

Sarpi, B.; Zirmi, R.; Putero, M.; Bouslama, M.; Hemeryck, A.; Vizzini, S.

2018-01-01

Using Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6-8 eV band gap) is also reported.

Thermoelastic enhancement of the magnonic spin Seebeck effect in thin films and bulk samples

NASA Astrophysics Data System (ADS)

Chotorlishvili, L.; Wang, X.-G.; Toklikishvili, Z.; Berakdar, J.

2018-04-01

A nonuniform temperature profile may generate a pure spin current in magnetic films, as observed, for instance, in the spin Seebeck effect. In addition, thermally induced elastic deformations may set in that could affect the spin current. A self-consistent theory of the magnonic spin Seebeck effect including thermally activated magnetoelastic effects is presented, and analytical expressions for the thermally activated deformation tensor and dispersion relations for coupled magnetoelastic modes are obtained. We derive analytical results for bulk (three-dimensional) systems and thin magnetic (two-dimensional) films. We observe that the displacement vector and the deformation tensor in bulk systems decay asymptotically as u ˜1 /R2 and ɛ ˜1 /R3 , respectively, while the decays in thin magnetic films proceed slower, following u ˜1 /R and ɛ ˜1 /R2 . The dispersion relations evidence a strong anisotropy in the magnetic excitations. We observe that a thermoelastic steady-state deformation may lead to both an enchantment and a reduction of the gap in the magnonic spectrum. The reduction of the gap increases the number of magnons contributing to the spin Seebeck effect and offers new possibilities for the thermoelastic control of the spin Seebeck effect.

Gap junction systems in the rat vestibular labyrinth: immunohistochemical and ultrastructural analysis.

PubMed

Kikuchi, T; Adams, J C; Paul, D L; Kimura, R S

1994-09-01

The distribution of gap junctions within the vestibular labyrinth was investigated using immunohistochemistry and transmission electron microscopy. Connexin26-like immunoreactivity was observed among supporting cells in each vestibular sensory epithelium. Reaction product was also present in the transitional epithelium of each vestibular endorgan and in the planum semilunatum of crista ampullaris. No connexin26-like immunoreactivity was observed among thin wall epithelial cells or among vestibular dark cells. In addition, fibrocytes within vestibular connective tissue were positively immunostained. Reaction product was also detected in the melanocyte area just beneath dark cells. Ultrastructural observations indicated that a gap junction network of vestibular supporting cells extends to the transitional epithelium and planum semilunatum and forms an isolated epithelial cell gap junction system in each vestibular endorgan. In contrast, no gap junctions were found among wall epithelial cells or among dark cells. Fibrocytes and melanocytes were coupled by gap junctions and belong to the connective tissue cell gap junction system, which is continuous throughout the vestibular system and the cochlea. The possible functional significance of these gap junction systems is discussed.

Effects of thinning young forests on chanterelle mushroom production.

Treesearch

David Pilz; Randy Molina; Jim. Mayo

2006-01-01

Chanterelle productivity responses were investigated in a replicated, landscape-scale thinning experiment in 50-year-old Douglas-fir stands in the Cascade Range of Oregon. Chanterelle numbers and weight were significantly decreased by thinning the first year after logging more so in heavily thinned stands than lightly thinned stands for chanterelle numbers. Nearly all...

Redefining yield gaps at various spatial scales

NASA Astrophysics Data System (ADS)

Meng, K.; Fishman, R.; Norstrom, A. V.; Diekert, F. K.; Engstrom, G.; Gars, J.; McCarney, G. R.; Sjostedt, M.

2013-12-01

Recent research has highlighted the prevalence of 'yield gaps' around the world and the importance of closing them for global food security. However, the traditional concept of yield gap -defined as the difference between observed and optimal yield under biophysical conditions - omit relevant socio-economic and ecological constraints and thus offer limited guidance on potential policy interventions. This paper proposes alternative definitions of yield gaps by incorporating rich, high resolution, national and sub-national agricultural datasets. We examine feasible efforts to 'close yield gaps' at various spatial scales and across different socio-economic and ecological domains.

Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2013-09-01

Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

Effect of annealing time on optical and electrical properties of CdS thin films

NASA Astrophysics Data System (ADS)

Soliya, Vanshika; Tandel, Digisha; Patel, Chandani; Patel, Kinjal

2018-05-01

Cadmium sulphide (CdS) is semiconductor compound of II-VI group. Thin film of CdS widely used in the applications such as, a buffer layer in copper indium diselenide (CIS) hetrojunction based solar cells, transistors, photo detectors and light emitting diodes. Because of the ease of making like chemical bath deposition (CBD), screen printing and thermal evaporation. It is extensively used in the CIS based solar cells as a buffer layers. The buffer layers usually used for reducing the interface recombination of the photo generated carriers by means of improving the lattice mismatch between the layers. The optimum thickness and the optoelectronics properties of CdS thin films like, optical band gap, electrical resistivity, structure, and composition etc., are to be considering for its use as a buffer layer. In the present study the CdS thin film were grown by simple dip coating method. In this method we had prepared 0.1M Cadmium-thiourea precursor solution. Before the deposition process of CdS, glass substrate has been cleaned using Methanol, Acetone, Trichloroethylene and De-ionized (DI) water. After coating of precursor layer, it was heated at 200 °C for themolysis. Then after CdS films were annealed at 200 °C for different time and studied its influence on the optical transmission, band gap, XRD, raman and the electrical resistivity. As increasing the annealing time we had observed the average transmission of the films was reduce after the absorption edge. In addition to the blue shift of absorption edge was observed. The observed optimum band gap was around 2.50 eV. XRD and raman analysis confirms the cubuc phase of CdS. Hot probe method confirms the n-type conductivity of the CdS film. Hall probe data shows the resistivity of the films was in the order of 103 Ωcm. Observed data signifies its future use in the many optoelectronics devices.

Structural dynamics of tropical moist forest gaps

Treesearch

Maria O. Hunter; Michael Keller; Douglas Morton; Bruce Cook; Michael Lefsky; Mark Ducey; Scott Saleska; Raimundo Cosme de Oliveira; Juliana Schietti

2015-01-01

Gap phase dynamics are the dominant mode of forest turnover in tropical forests. However, gap processes are infrequently studied at the landscape scale. Airborne lidar data offer detailed information on three-dimensional forest structure, providing a means to characterize fine-scale (1 m) processes in tropical forests over large areas. Lidar-based estimates of forest...

Large grained perovskite solar cells derived from single-crystal perovskite powders with enhanced ambient stability

DOE PAGES

Yen, Hung -Ju; Liang, Po -Wei; Chueh, Chu -Chen; ...

2016-05-25

In this study, we demonstrate the large grained perovskite solar cells prepared from precursor solution comprising single-crystal perovskite powders for the first time. Here, the resultant large grained perovskite thin film possesses negligible physical (structural) gap between each large grain and are highly crystalline as evidenced by its fan-shaped birefringence observed under polarized light, which is very different to the thin film prepared from the typical precursor route (MAI + PbI 2).

Physical properties of nanostructured CeO2 thin films grown by SILAR method

NASA Astrophysics Data System (ADS)

Khan, Ishaque Ahmed; Belkhedkar, M. R.; Salodkar, R. V.; Ubale, A. U.

2018-05-01

Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray diffraction, FTIR, FESEM and EDX studies. The highly resistive (1010 Ω cm) semiconducting CeO2 film exhibits 2.95 eV optical band gap.

Results of Large-Scale Spacecraft Flammability Tests

NASA Technical Reports Server (NTRS)

Ferkul, Paul; Olson, Sandra; Urban, David L.; Ruff, Gary A.; Easton, John; T'ien, James S.; Liao, Ta-Ting T.; Fernandez-Pello, A. Carlos; Torero, Jose L.; Eigenbrand, Christian;

Impact of Fe doping on the electronic structure of SrTiO3 thin films determined by resonant photoemission

NASA Astrophysics Data System (ADS)

Kubacki, J.; Kajewski, D.; Goraus, J.; Szot, K.; Koehl, A.; Lenser, Ch.; Dittmann, R.; Szade, J.

2018-04-01

Epitaxial thin films of Fe doped SrTiO3 have been studied by the use of resonant photoemission. This technique allowed us to identify contributions of the Fe and Ti originating electronic states to the valence band. Two valence states of iron Fe2+ and Fe3+, detected on the base of x-ray absorption studies spectra, appeared to form quite different contributions to the valence band of SrTiO3. The electronic states within the in-gap region can be attributed to Fe and Ti ions. The Fe2+ originating states which can be connected to the presence of oxygen vacancies form a broad band reaching binding energies of about 0.5 eV below the conduction band, while Fe3+ states form in the gap a sharp feature localized just above the top of the valence band. These structures were also confirmed by calculations performed with the use of the FP-LAPW/APW+lo method including Coulomb correlations within the d shell. It has been shown that Fe doping induced Ti originating states in the energy gap which can be related to the hybridization of Ti and Fe 3d orbitals.

Band gap states in nanocrystalline WO3 thin films studied by soft x-ray spectroscopy and optical spectrophotometry.

PubMed

Johansson, M B; Kristiansen, P T; Duda, L; Niklasson, G A; Österlund, L

2016-11-30

Nanocrystalline tungsten trioxide (WO3) thin films prepared by DC magnetron sputtering have been studied using soft x-ray spectroscopy and optical spectrophotometry. Resonant inelastic x-ray scattering (RIXS) measurements reveal band gap states in sub-stoichiometric γ-WO3-x with x  =  0.001-0.005. The energy positions of these states are in good agreement with recently reported density functional calculations. The results were compared with optical absorption measurements in the near infrared spectral region. An optical absorption peak at 0.74 eV is assigned to intervalence transfer of polarons between W sites. A less prominent peak at energies between 0.96 and 1.16 eV is assigned to electron excitation of oxygen vacancies. The latter results are supported by RIXS measurements, where an energy loss in this energy range was observed, and this suggests that electron transfer processes involving transitions from oxygen vacancy states can be observed in RIXS. Our results have implications for the interpretation of optical properties of WO3, and the optical transitions close to the band gap, which are important in photocatalytic and photoelectrochemical applications.

Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

PubMed

Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

2016-06-07

Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

NASA Astrophysics Data System (ADS)

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-01

The threshold voltage instabilities and huge hysteresis of MoS2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method.

PubMed

Park, Junghak; Hur, Ji-Hyun; Jeon, Sanghun

2018-04-27

The threshold voltage instabilities and huge hysteresis of MoS 2 thin film transistors (TFTs) have raised concerns about their practical applicability in next-generation switching devices. These behaviors are associated with charge trapping, which stems from tunneling to the adjacent trap site, interfacial redox reaction and interface and/or bulk trap states. In this report, we present quantitative analysis on the electron charge trapping mechanism of MoS 2 TFT by fast pulse I-V method and the space charge limited current (SCLC) measurement. By adopting the fast pulse I-V method, we were able to obtain effective mobility. In addition, the origin of the trap states was identified by disassembling the sub-gap states into interface trap and bulk trap states by simple extraction analysis. These measurement methods and analyses enable not only quantitative extraction of various traps but also an understanding of the charge transport mechanism in MoS 2 TFTs. The fast I-V data and SCLC data obtained under various measurement temperatures and ambient show that electron transport to neighboring trap sites by tunneling is the main charge trapping mechanism in thin-MoS 2 TFTs. This implies that interfacial traps account for most of the total sub-gap states while the bulk trap contribution is negligible, at approximately 0.40% and 0.26% in air and vacuum ambient, respectively. Thus, control of the interface trap states is crucial to further improve the performance of devices with thin channels.

Cell-cell interactions of isolated and cultured oligodendrocytes: formation of linear occluding junctions and expression of peculiar intramembrane particles.

PubMed

Massa, P T; Szuchet, S; Mugnaini, E

1984-12-01

Oligodendrocytes were isolated from lamb brain. Freshly isolated cells and cultured cells, either 1- to 4-day-old unattached or 1- to 5-week-old attached, were examined by thin section and freeze-fracture electron microscopy. Freeze-fracture of freshly isolated oligodendrocytes showed globular and elongated intramembrane particles similar to those previously described in oligodendrocytes in situ. Enrichment of these particles was seen at sites of inter-oligodendrocyte contact. Numerous gap junctions and scattered linear tight junctional arrays were apparent. Gap junctions were connected to blebs of astrocytic plasma membrane sheared off during isolation, whereas tight junctions were facing extracellular space or blebs of oligodendrocytic plasma membrane. Thin sections of cultured, unattached oligodendrocytes showed rounded cell bodies touching one another at points without forming specialized cell junctions. Cells plated on polylysine-coated aclar dishes attached, emanated numerous, pleomorphic processes, and expressed galactocerebroside and myelin basic protein, characteristic markers for oligodendrocytes. Thin sections showed typical oligodendrocyte ultrastructure but also intermediate filaments not present in unattached cultures. Freeze-fracture showed intramembrane particles similar to but more numerous, and with a different fracture face repartition, than those seen in oligodendrocytes, freshly isolated or in situ. Gap junctions were small and rare. Apposed oligodendrocyte plasma membrane formed linear tight junctions which became more numerous with time in culture. Thus, cultured oligodendrocytes isolated from ovine brains develop and maintain features characteristic of mature oligodendrocytes in situ and can be used to explore formation and maintenance of tight junctions and possibly other classes of cell-cell interactions important in the process of myelination.

Structural and optical properties of cobalt doped multiferroics BiFeO3 nanostructure thin films

NASA Astrophysics Data System (ADS)

Prasannakumara, R.; Naik, K. Gopalakrishna

2018-05-01

Bismuth ferrite (BiFeO3) and Cobalt doped BiFeO3 (BiFe1-XCoXO3) nanostructure thin films were deposited on glass substrates by the sol-gel spin coating method. The X-ray diffraction patterns (XRD) of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films showed distorted rhombohedral structure. The shifting of peaks to higher angles was observed in cobalt doped BiFeO3. The surface morphology of the BiFeO3 and BiFe1-XCoXO3 nanostructure thin films were studied using FESEM, an increase in grain size was observed as Co concentration increases. The thickness of the nanostructure thin films was examined using FESEM cross-section. The EDX studies confirmed the elemental composition of the grown BiFeO3 and BiFe1-XCoXO3 nanostructure thin films. The optical characterizations of the grown nanostructure thin films were carried out using FTIR, it confirms the existence of Fe-O and Bi-O bands and UV-Visible spectroscopy shows the increase in optical band gap of the BiFeO3 nanostructure thin films with Co doping by ploting Tauc plot.

Structural Ordering of Semiconducting Polymers and Small-Molecules for Organic Electronics

NASA Astrophysics Data System (ADS)

O'Hara, Kathryn Allison

Semiconducting polymers and small-molecules can be readily incorporated into electronic devices such as organic photovoltaics (OPVs), thermoelectrics (OTEs), organic light emitting diodes (OLEDs), and organic thin film transistors (OTFTs). Organic materials offer the advantage of being processable from solution to form flexible and lightweight thin films. The molecular design, processing, and resulting thin film morphology of semiconducting polymers drastically affect the optical and electronic properties. Charge transport within films of semiconducting polymers relies on the nanoscale organization to ensure electronic coupling through overlap of molecular orbitals and to provide continuous transport pathways. While the angstrom-scale packing details can be studied using X-ray scattering methods, an understanding of the mesoscale, or the length scale over which smaller ordered regions connect, is much harder to achieve. Grain boundaries play an important role in semiconducting polymer thin films where the average grain size is much smaller than the total distance which charges must traverse in order to reach the electrodes in a device. The majority of semiconducting polymers adopt a lamellar packing structure in which the conjugated backbones align in parallel pi-stacks separated by the alkyl side-chains. Only two directions of transport are possible--along the conjugated backbone and in the pi-stacking direction. Currently, the discussion of transport between crystallites is centered around the idea of tie-chains, or "bridging" polymer chains connecting two ordered regions. However, as molecular structures become increasingly complex with the development of new donor-acceptor copolymers, additional forms of connectivity between ordered domains should be considered. High resolution transmission electron microscopy (HRTEM) is a powerful tool for directly imaging the crystalline grain boundaries in polymer and small-molecule thin films. Recently, structures comparable to quadrites were discovered in the semiconducting polymer, PSBTBT, where the angle of chain overlap could be predicted by the geometry of the backbone and alkyl side-chains. Such structures are hypothesized to improve the electronic connectivity and enable 3D transport. Now, it has been determined that another semiconducting polymer, PBDTTPD, forms cross-chain structures in thin films. PBDTTPD is a low band-gap donor-acceptor copolymer used in high efficiency OPVs. The effect of the alkyl side-chains on intercrystallite order is determined by examining three different derivatives of the PBDTTPD polymer with HRTEM. Additionally, the expansion and contraction of films during thermal annealing and slow cooling is monitored through in-situ grazing incidence wide-angle X-ray scattering (GIWAXS) measurements. Results show that minor variations in side-chain structure drive both crystallite orientation and the formation of crossed structures. Overall, these studies suggest design principles to continue to advance the field of organic electronics.

Intermediate stages of surface state formation and collapse of topological protection to transport in Bi2Se3

NASA Astrophysics Data System (ADS)

Banerjee, Abhishek; Rai, Abhishek; Majhi, Kunjalata; Barman, Sudipta Roy; Ganesan, R.; Kumar, P. S. Anil

2017-05-01

Surface states consisting of helical Dirac fermions have been extensively studied in three-dimensional topological insulators. Yet, experiments to date have only investigated fully formed topological surface states (TSS) and it is not known whether preformed or partially formed surface states can exist or what properties they could potentially host. Here, by decorating thin films of Bi2Se3 with nanosized islands of the same material, we show for the first time that not only can surface states exist in various intermediate stages of formation but they exhibit unique properties not accessible in fully formed TSS. These include tunability of the Dirac cone mass, vertical migration of the surface state wave-function and the appearance of mid-gap Rashba-like states as exemplified by our theoretical model for decorated TIs. Our experiments show that an interplay of Rashba and Dirac fermions on the surface leads to an intriguing multi-channel weak anti-localization effect concomitant with an unprecedented tuning of the topological protection to transport. Our work offers a new route to engineer topological surface states involving Dirac-Rashba coupling by nano-scale decoration of TI thin films, at the same time shedding light on the real-space mechanism of surface state formation in general.

Effect of patch borders on coercivity in amorphous rare earth-transition metal thin films

NASA Technical Reports Server (NTRS)

Patterson, G.; Fu, H.; Giles, R. C.; Mansuripur, M.

1991-01-01

The coercivity at the micron scale is a very important property of magneto-optical media. It is a key factor that determines the magnetic domain wall movement and domain reversal. How the coercivity is influenced by a special type of patch borders is discussed. Patch formation is a general phenomenon in growth processes of amorphous rare earth transition metal thin films. Different patches may stem from different seeds and the patch borders are formed when they merge. Though little is known about the exact properties of the borders, we may expect that the exchange interaction at the patch border is weaker than that within a patch, since there is usually a spatial gap between two patches. Computer simulations were performed on a 2-D hexagonal lattice consisting of 37 complete patches with random shape and size. From the series of simulations we may conclude that the domain in the patch with borders of 30 percent exchange strength can expand most easily to the whole lattice, because the exchange strength can expand most easily to the whole lattice, because the exchange strength of the border is not too high to prevent the domain from growing within the patch and it is not too low to prevent the domain from expanding beyond the patch.

Tribology-Structure Relationships in Silicon Oxycarbide Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryan, Joseph V.; Colombo, Paolo; Howell, Jane A.

Silicon oxycarbide is a versatile material system that is attractive for many applications because of its ability to tune properties such as chemical compatibility, refractive index, electrical conductivity, and optical band gap through changes in composition. One particularly intriguing application lies in the production of biocompatible coatings with good mechanical properties. In this paper, we report on the wide range of mechanical and tribological property values exhibited by silicon oxycarbide thin films deposited by reactive radio frequency magnetron sputtering. Through a change in oxygen partial pressure in the sputtering plasma, the composition of the films was controlled to produce relativelymore » pure SiO2, carbon-doped SiC, and compositions between these limits. Hardness values were 8-20 GPa over this range and the elastic modulus was measured to be between 60 and 220 GPa. We call attention to the fit of the mechanical data to a simple additive bond-mixture model for property prediction. Tribological parameters were measured using a ball-on-disk apparatus and the samples exhibited the same general trends for friction coefficient and wear rate. One film is shown to produce variable low friction behavior and low wear rate, which suggests a solid-state self-lubrication process because of heterogeneity on the nanometer scale.« less

Method of manufacture of atomically thin boron nitride

DOEpatents

Zettl, Alexander K

2013-08-06

The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

Brilliant iridescence of Morpho butterfly wing scales is due to both a thin film lower lamina and a multilayered upper lamina.

PubMed

Giraldo, M A; Stavenga, D G

2016-05-01

Butterflies belonging to the nymphalid subfamily, Morphinae, are famous for their brilliant blue wing coloration and iridescence. These striking optical phenomena are commonly explained as to originate from multilayer reflections by the ridges of the wing scales. Because the lower lamina of the scales of related nymphalid butterflies, the Nymphalinae, plays a dominant role in the wing coloration, by acting as a thin film reflector, we investigated single blue scales of three characteristic Morpho species: M. epistrophus, M. helenor and M. cypris. The experimental data obtained by spectrophotometry, scatterometry and scanning electron microscopy demonstrated that also in the Morpho genus the lower lamina of both the cover and ground scales acts as an optical thin film reflector, contributing importantly to the blue structural coloration of the wings. Melanin pigment has a contrast-enhancing function in a sub-class of ground scales.

Preparation and characterization of double layer thin films ZnO/ZnO:Ag for methylene blue photodegradation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wibowo, Singgih, E-mail: singgih@st.fisika.undip.ac.id; Sutanto, Heri, E-mail: herisutanto@undip.ac.id

2016-02-08

Double layer (DL) thin films of zinc oxide and silver-doped zinc oxide (ZnO/ZnO:Ag) were deposited on glass substrate by sol-gel spray coating technique. The prepared thin films were subjected for optical and photocatalytic studies. UV-visible transmission spectra shows that the subtitution of Ag in ZnO leads to band gap reduction. The influence of Ag doping on the photocatalytic activity of ZnO for the degradation of methylene blue dye was studied under solar radiation. The light absorption over an extended visible region by Ag ion doping in ZnO film contributed equally to improve the photocatalytic activity up to 98.29%.

Influence of high energy ion irradiation on fullerene derivative (PCBM) thin films

NASA Astrophysics Data System (ADS)

Sharma, Trupti; Singhal, Rahul; Vishnoi, Ritu; Lakshmi, G. B. V. S.; Biswas, S. K.

2017-04-01

The modifications produced by 55 MeV Si4+ swift heavy ion irradiation on the phenyl C61 butyric acid methyl ester (PCBM) thin films (thickness ∼ 100 nm) has been enlightened. The PCBM thin films were irradiated at 1 × 1010, 1 × 1011 and 1 × 1012 ions/cm2 fluences. After ion irradiation, the decreased optical band gap and FTIR band intensities were observed. The Raman spectroscopy reveals the damage produced by energetic ions. The morphological variation were investigated by atomic force microscopy and contact angle measurements and observed to be influenced by incident ion fluences. After 1011 ions/cm2 fluence, the overlapping of ion tracks starts and produced overlapping effects.

Optical and microwave dielectric properties of pulsed laser deposited Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joseph, Andrews; Goud, J. Pundareekam; Raju, K. C. James

2016-05-23

Optical properties of pulsed laser deposited (PLD) sodium bismuth titanate thin films (NBT), are investigated at wavelengths of 190-2500 nm. Microwave dielectric properties were investigated using the Split Post Dielectric Resonator (SPDR) technique. At 10 GHz, the NBT films have a dielectric constant of 205 and loss tangent of 0.0373 at room temperature. The optical spectra analysis reveals that NBT thin films have an optical band gap E{sub g}=3.55 eV and it has a dielectric constant of 3.37 at 1000 nm with dielectric loss of 0.299. Hence, NBT is a promising candidate for photonic device applications.

Influence of sputtering power on the optical properties of ITO thin films

NASA Astrophysics Data System (ADS)

K, Aijo John; Kumar, Vineetha V.; M, Deepak; T, Manju

2014-10-01

Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

Probing optical band gaps at the nanoscale in NiFe₂O₄ and CoFe₂O₄ epitaxial films by high resolution electron energy loss spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dileep, K.; Loukya, B.; Datta, R., E-mail: ranjan@jncasr.ac.in

2014-09-14

Nanoscale optical band gap variations in epitaxial thin films of two different spinel ferrites, i.e., NiFe₂O₄ (NFO) and CoFe₂O₄ (CFO), have been investigated by spatially resolved high resolution electron energy loss spectroscopy. Experimentally, both NFO and CFO show indirect/direct band gaps around 1.52 eV/2.74 and 2.3 eV, and 1.3 eV/2.31 eV, respectively, for the ideal inverse spinel configuration with considerable standard deviation in the band gap values for CFO due to various levels of deviation from the ideal inverse spinel structure. Direct probing of the regions in both the systems with tetrahedral A site cation vacancy, which is distinct frommore » the ideal inverse spinel configuration, shows significantly smaller band gap values. The experimental results are supported by the density functional theory based modified Becke-Johnson exchange correlation potential calculated band gap values for the different cation configurations.« less

Effects of Climate Variability and Accelerated Forest Thinning on Watershed-Scale Runoff in Southwestern USA Ponderosa Pine Forests

PubMed Central

Robles, Marcos D.; Marshall, Robert M.; O'Donnell, Frances; Smith, Edward B.; Haney, Jeanmarie A.; Gori, David F.

2014-01-01

The recent mortality of up to 20% of forests and woodlands in the southwestern United States, along with declining stream flows and projected future water shortages, heightens the need to understand how management practices can enhance forest resilience and functioning under unprecedented scales of drought and wildfire. To address this challenge, a combination of mechanical thinning and fire treatments are planned for 238,000 hectares (588,000 acres) of ponderosa pine (Pinus ponderosa) forests across central Arizona, USA. Mechanical thinning can increase runoff at fine scales, as well as reduce fire risk and tree water stress during drought, but the effects of this practice have not been studied at scales commensurate with recent forest disturbances or under a highly variable climate. Modifying a historical runoff model, we constructed scenarios to estimate increases in runoff from thinning ponderosa pine at the landscape and watershed scales based on driving variables: pace, extent and intensity of forest treatments and variability in winter precipitation. We found that runoff on thinned forests was about 20% greater than unthinned forests, regardless of whether treatments occurred in a drought or pluvial period. The magnitude of this increase is similar to observed declines in snowpack for the region, suggesting that accelerated thinning may lessen runoff losses due to warming effects. Gains in runoff were temporary (six years after treatment) and modest when compared to mean annual runoff from the study watersheds (0–3%). Nonetheless gains observed during drought periods could play a role in augmenting river flows on a seasonal basis, improving conditions for water-dependent natural resources, as well as benefit water supplies for downstream communities. Results of this study and others suggest that accelerated forest thinning at large scales could improve the water balance and resilience of forests and sustain the ecosystem services they provide. PMID:25337823

Effects of climate variability and accelerated forest thinning on watershed-scale runoff in southwestern USA ponderosa pine forests.

PubMed

Robles, Marcos D; Marshall, Robert M; O'Donnell, Frances; Smith, Edward B; Haney, Jeanmarie A; Gori, David F

2014-01-01

The recent mortality of up to 20% of forests and woodlands in the southwestern United States, along with declining stream flows and projected future water shortages, heightens the need to understand how management practices can enhance forest resilience and functioning under unprecedented scales of drought and wildfire. To address this challenge, a combination of mechanical thinning and fire treatments are planned for 238,000 hectares (588,000 acres) of ponderosa pine (Pinus ponderosa) forests across central Arizona, USA. Mechanical thinning can increase runoff at fine scales, as well as reduce fire risk and tree water stress during drought, but the effects of this practice have not been studied at scales commensurate with recent forest disturbances or under a highly variable climate. Modifying a historical runoff model, we constructed scenarios to estimate increases in runoff from thinning ponderosa pine at the landscape and watershed scales based on driving variables: pace, extent and intensity of forest treatments and variability in winter precipitation. We found that runoff on thinned forests was about 20% greater than unthinned forests, regardless of whether treatments occurred in a drought or pluvial period. The magnitude of this increase is similar to observed declines in snowpack for the region, suggesting that accelerated thinning may lessen runoff losses due to warming effects. Gains in runoff were temporary (six years after treatment) and modest when compared to mean annual runoff from the study watersheds (0-3%). Nonetheless gains observed during drought periods could play a role in augmenting river flows on a seasonal basis, improving conditions for water-dependent natural resources, as well as benefit water supplies for downstream communities. Results of this study and others suggest that accelerated forest thinning at large scales could improve the water balance and resilience of forests and sustain the ecosystem services they provide.

DNA and RNA sequencing by nanoscale reading through programmable electrophoresis and nanoelectrode-gated tunneling and dielectric detection

DOEpatents

Lee, James W.; Thundat, Thomas G.

2005-06-14

An apparatus and method for performing nucleic acid (DNA and/or RNA) sequencing on a single molecule. The genetic sequence information is obtained by probing through a DNA or RNA molecule base by base at nanometer scale as though looking through a strip of movie film. This DNA sequencing nanotechnology has the theoretical capability of performing DNA sequencing at a maximal rate of about 1,000,000 bases per second. This enhanced performance is made possible by a series of innovations including: novel applications of a fine-tuned nanometer gap for passage of a single DNA or RNA molecule; thin layer microfluidics for sample loading and delivery; and programmable electric fields for precise control of DNA or RNA movement. Detection methods include nanoelectrode-gated tunneling current measurements, dielectric molecular characterization, and atomic force microscopy/electrostatic force microscopy (AFM/EFM) probing for nanoscale reading of the nucleic acid sequences.

Laser based micro forming and assembly.

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacCallum, Danny O'Neill; Wong, Chung-Nin Channy; Knorovsky, Gerald Albert

2006-11-01

It has been shown that thermal energy imparted to a metallic substrate by laser heating induces a transient temperature gradient through the thickness of the sample. In favorable conditions of laser fluence and absorptivity, the resulting inhomogeneous thermal strain leads to a measurable permanent deflection. This project established parameters for laser micro forming of thin materials that are relevant to MESA generation weapon system components and confirmed methods for producing micrometer displacements with repeatable bend direction and magnitude. Precise micro forming vectors were realized through computational finite element analysis (FEA) of laser-induced transient heating that indicated the optimal combination ofmore » laser heat input relative to the material being heated and its thermal mass. Precise laser micro forming was demonstrated in two practical manufacturing operations of importance to the DOE complex: micrometer gap adjustments of precious metal alloy contacts and forming of meso scale cones.« less

Imposing long-range ferromagnetic order in rare-earth-doped magnetic topological-insulator heterostructures

NASA Astrophysics Data System (ADS)

Duffy, L. B.; Frisk, A.; Burn, D. M.; Steinke, N.-J.; Herrero-Martin, J.; Ernst, A.; van der Laan, G.; Hesjedal, T.

2018-05-01

The combination of topological properties and magnetic order can lead to new quantum states and exotic physical phenomena, such as the quantum anomalous Hall (QAH) effect. The size of the magnetic gap in the topological surface states, key for the robust observation of the QAH state, scales with the magnetic moment of the doped three-dimensional topological insulator (TI). The pioneering transition-metal doped (Sb,Bi ) 2(Se,Te ) 3 thin films only allow for the observation of the QAH effect up to some 100 mK, despite the much higher magnetic ordering temperatures. On the other hand, high magnetic moment materials, such as rare-earth-doped (Sb,Bi ) 2(Se,Te ) 3 thin films, show large moments but no long-range magnetic order. Proximity coupling and interfacial effects, multiplied in artificial heterostructures, allow for the engineering of the electronic and magnetic properties. Here, we show the successful growth of high-quality Dy:Bi2Te3 /Cr:Sb2Te3 thin film heterostructures. Using x-ray magnetic spectroscopy we demonstrate that high transition temperature Cr:Sb2Te3 can introduce long-range magnetic order in high-moment Dy:Bi2Te3 —up to a temperature of 17 K—in excellent agreement with first-principles calculations, which reveal the origin of the long-range magnetic order in a strong antiferromagnetic coupling between Dy and Cr magnetic moments at the interface extending over several layers. Engineered magnetic TI heterostructures may be an ideal materials platform for observing the QAH effect at liquid He temperatures and above.

Adsorption and electronic properties of pentacene on thin dielectric decoupling layers.

PubMed

Koslowski, Sebastian; Rosenblatt, Daniel; Kabakchiev, Alexander; Kuhnke, Klaus; Kern, Klaus; Schlickum, Uta

2017-01-01

With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111) and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111) results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111), as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal-molecule interaction, which decreases the HOMO-LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS) and their shapes can be resolved by spectroscopic mapping.

Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

PubMed Central

Kabakchiev, Alexander; Kuhnke, Klaus; Kern, Klaus

2017-01-01

With the increasing use of thin dielectric decoupling layers to study the electronic properties of organic molecules on metal surfaces, comparative studies are needed in order to generalize findings and formulate practical rules. In this paper we study the adsorption and electronic properties of pentacene deposited onto h-BN/Rh(111) and compare them with those of pentacene deposited onto KCl on various metal surfaces. When deposited onto KCl, the HOMO and LUMO energies of the pentacene molecules scale with the work functions of the combined KCl/metal surface. The magnitude of the variation between the respective KCl/metal systems indicates the degree of interaction of the frontier orbitals with the underlying metal. The results confirm that the so-called IDIS model developed by Willenbockel et al. applies not only to molecular layers on bare metal surfaces, but also to individual molecules on thin electronically decoupling layers. Depositing pentacene onto h-BN/Rh(111) results in significantly different adsorption characteristics, due to the topographic corrugation of the surface as well as the lateral electric fields it presents. These properties are reflected in the divergence from the aforementioned trend for the orbital energies of pentacene deposited onto h-BN/Rh(111), as well as in the different adsorption geometry. Thus, the highly desirable capacity of h-BN to trap molecules comes at the price of enhanced metal–molecule interaction, which decreases the HOMO–LUMO gap of the molecules. In spite of the enhanced interaction, the molecular orbitals are evident in scanning tunnelling spectroscopy (STS) and their shapes can be resolved by spectroscopic mapping. PMID:28900594

Structural and spectroscopic analysis of ex-situ annealed RF sputtered aluminium doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Otieno, Francis; Airo, Mildred; Erasmus, Rudolph M.; Billing, David G.; Quandt, Alexander; Wamwangi, Daniel

2017-08-01

Aluminium doped zinc oxide thin films are prepared by Radio Frequency magnetron sputtering in pure argon atmosphere at 100 W. The structural results reveal good film adhesion on a silicon substrate (001). The thin films were then subjected to heat treatment in a furnace under ambient air. The structural, morphological, and optical properties of the thin films as a function of deposition time and annealing temperatures have been investigated using Grazing incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy, and Scanning Electronic Microscopy. The photoluminescence properties of the annealed films showed significant changes in the optical properties attributed to mid gap defects. Annealing increases the crystallite size and the roughness of the film. The crystallinity of the films also improved as evident from the Raman and XRD studies.

Sensing of volatile organic compounds by copper phthalocyanine thin films

NASA Astrophysics Data System (ADS)

Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

2017-02-01

Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

Effect of pressure-assisted thermal annealing on the optical properties of ZnO thin films.

PubMed

Berger, Danielle; Kubaski, Evaldo Toniolo; Sequinel, Thiago; da Silva, Renata Martins; Tebcherani, Sergio Mazurek; Varela, José Arana

2013-01-01

ZnO thin films were prepared by the polymeric precursor method. The films were deposited on silicon substrates using the spin-coating technique, and were annealed at 330 °C for 32 h under pressure-assisted thermal annealing and under ambient pressure. Their structural and optical properties were characterized, and the phases formed were identified by X-ray diffraction. No secondary phase was detected. The ZnO thin films were also characterized by field-emission scanning electron microscopy, Fourier transform infrared spectroscopy, photoluminescence and ultraviolet emission intensity measurements. The effect of pressure on these thin films modifies the active defects that cause the recombination of deep level states located inside the band gap that emit yellow-green (575 nm) and orange (645 nm) photoluminescence. Copyright © 2012 John Wiley & Sons, Ltd.

Investigation on Structural and Optical Properties of Copper Telluride Thin Films with Different Annealing Temperature

NASA Astrophysics Data System (ADS)

Nishanthini, R.; Muthu Menaka, M.; Pandi, P.; Bahavan Palani, P.; Neyvasagam, K.

The copper telluride (Cu2Te) thin film of thickness 240nm was coated on a microscopic glass substrate by thermal evaporation technique. The prepared films were annealed at 150∘C and 250∘C for 1h. The annealing effect on Cu2Te thin films was examined with different characterization methods like X-ray Diffraction Spectroscopy (XRD), Scanning Electron Microscopy (SEM), Ultra Violet-Visible Spectroscopy (UV-VIS) and Photoluminescence (PL) Spectroscopy. The peak intensities of XRD spectra were increased while increasing annealing temperature from 150∘C to 250∘C. The improved crystallinity of the thin films was revealed. However, the prepared films are exposed complex structure with better compatibility. Moreover, the shift in band gap energy towards higher energies (blue shift) with increasing annealing temperature is observed from the optical studies.

Electronic and optical properties of La-doped S r3I r2O7 epitaxial thin films

NASA Astrophysics Data System (ADS)

Souri, M.; Terzic, J.; Johnson, J. M.; Connell, J. G.; Gruenewald, J. H.; Thompson, J.; Brill, J. W.; Hwang, J.; Cao, G.; Seo, A.

2018-02-01

We have investigated structural, transport, and optical properties of tensile strained (Sr1-xL ax ) 3I r2O7 (x =0 , 0.025, 0.05) epitaxial thin films. While high-Tc superconductivity is predicted theoretically in the system, we have observed that all of the samples remain insulating with finite optical gap energies and Mott variable-range hopping characteristics in transport. Cross-sectional scanning transmission electron microscopy indicates that structural defects such as stacking faults appear in this system. The insulating behavior of the La-doped S r3I r2O7 thin films is presumably due to disorder-induced localization and ineffective electron doping of La, which brings to light the intriguing difference between epitaxial thin films and bulk single crystals of the iridates.

Optical properties of titanium di-oxide thin films prepared by dip coating method

NASA Astrophysics Data System (ADS)

Biswas, Sayari; Rahman, Kazi Hasibur; Kar, Asit Kumar

2018-05-01

Titanium dioxide (TiO2) thin films were prepared by sol-gel dip coating method on ITO coated glass substrate. The sol was synthesized by hydrothermal method at 90°C. The sol was then used to make TiO2 films by dip coating. After dip coating the rest of the sol was dried at 100°C to make TiO2 powder. Thin films were made by varying the number of dipping cycles and were annealed at 500°C. XRD study was carried out for powder samples that confirms the formation of anatase phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60%. Band gap of the prepared films varies from 3.15 eV to 3.22 eV.

Nanostructure CdS/ZnO heterojunction configuration for photocatalytic degradation of Methylene blue

NASA Astrophysics Data System (ADS)

Velanganni, S.; Pravinraj, S.; Immanuel, P.; Thiruneelakandan, R.

2018-04-01

In the present manuscript, thin films of Zinc Oxide (ZnO) have been deposited on a FTO substrate using a simple successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition (CBD) method. Cadmium Sulphide (CdS) nanoparticles are sensitized over ZnO thin films using SILAR method. The synthesized nanostructured CdS/ZnO heterojunction thin films was characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), High resolution transmission electron microscopy (HR-TEM), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy and Raman spectroscopy techniques. The band gap of CdS nanoparticles over ZnO nanostructure was found to be about 3.20 eV. The photocatalytic activities of the deposited CdS/ZnO thin films were evaluated by the degradation of methylene blue (MB) in an aqueous solution under sun light irradiation.

ZnS thin films deposition by thermal evaporation for photovoltaic applications

NASA Astrophysics Data System (ADS)

Benyahia, K.; Benhaya, A.; Aida, M. S.

2015-10-01

ZnS thin films were deposited on glass substrates by thermal evaporation from millimetric crystals of ZnS. The structural, compositional and optical properties of the films are studied by X-ray diffraction, SEM microscopy, and UV-VIS spectroscopy. The obtained results show that the films are pin hole free and have a cubic zinc blend structure with (111) preferential orientation. The estimated optical band gap is 3.5 eV and the refractive index in the visible wavelength ranges from 2.5 to 1.8. The good cubic structure obtained for thin layers enabled us to conclude that the prepared ZnS films may have application as buffer layer in replacement of the harmful CdS in CIGS thin film solar cells or as an antireflection coating in silicon-based solar cells.

Atomic-scale visualization of oxide thin-film surfaces.

PubMed

Iwaya, Katsuya; Ohsawa, Takeo; Shimizu, Ryota; Okada, Yoshinori; Hitosugi, Taro

2018-01-01

The interfaces of complex oxide heterostructures exhibit intriguing phenomena not observed in their constituent materials. The oxide thin-film growth of such heterostructures has been successfully controlled with unit-cell precision; however, atomic-scale understandings of oxide thin-film surfaces and interfaces have remained insufficient. We examined, with atomic precision, the surface and electronic structures of oxide thin films and their growth processes using low-temperature scanning tunneling microscopy. Our results reveal that oxide thin-film surface structures are complicated in contrast to the general perception and that atomically ordered surfaces can be achieved with careful attention to the surface preparation. Such atomically ordered oxide thin-film surfaces offer great opportunities not only for investigating the microscopic origins of interfacial phenomena but also for exploring new surface phenomena and for studying the electronic states of complex oxides that are inaccessible using bulk samples.

Investigation of the Structural, Electrical, and Optical Properties of the Nano-Scale GZO Thin Films on Glass and Flexible Polyimide Substrates

PubMed Central

Wang, Fang-Hsing; Chen, Kun-Neng; Hsu, Chao-Ming; Liu, Min-Chu; Yang, Cheng-Fu

2016-01-01

In this study, Ga2O3-doped ZnO (GZO) thin films were deposited on glass and flexible polyimide (PI) substrates at room temperature (300 K), 373 K, and 473 K by the radio frequency (RF) magnetron sputtering method. After finding the deposition rate, all the GZO thin films with a nano-scale thickness of about 150 ± 10 nm were controlled by the deposition time. X-ray diffraction patterns indicated that the GZO thin films were not amorphous and all exhibited the (002) peak, and field emission scanning electron microscopy showed that only nano-scale particles were observed. The dependences of the structural, electrical, and optical properties of the GZO thin films on different deposition temperatures and substrates were investigated. X-ray photoemission spectroscopy (XPS) was used to measure the elemental composition at the chemical and electronic states of the GZO thin films deposited on different substrates, which could be used to clarify the mechanism of difference in electrical properties of the GZO thin films. In this study, the XPS binding energy spectra of Ga2p3/2 and Ga2p1/2 peaks, Zn2p3/2 and Zn2p1/2 peaks, the Ga3d peak, and O1s peaks for GZO thin films on glass and PI substrates were well compared. PMID:28335216

Low Temperature Annealed Zinc Oxide Nanostructured Thin Film-Based Transducers: Characterization for Sensing Applications

PubMed Central

Haarindraprasad, R.; Hashim, U.; Gopinath, Subash C. B.; Kashif, Mohd; Veeradasan, P.; Balakrishnan, S. R.; Foo, K. L.; Poopalan, P.

2015-01-01

The performance of sensing surfaces highly relies on nanostructures to enhance their sensitivity and specificity. Herein, nanostructured zinc oxide (ZnO) thin films of various thicknesses were coated on glass and p-type silicon substrates using a sol-gel spin-coating technique. The deposited films were characterized for morphological, structural, and optoelectronic properties by high-resolution measurements. X-ray diffraction analyses revealed that the deposited films have a c-axis orientation and display peaks that refer to ZnO, which exhibits a hexagonal structure with a preferable plane orientation (002). The thicknesses of ZnO thin films prepared using 1, 3, 5, and 7 cycles were measured to be 40, 60, 100, and 200 nm, respectively. The increment in grain size of the thin film from 21 to 52 nm was noticed, when its thickness was increased from 40 to 200 nm, whereas the band gap value decreased from 3.282 to 3.268 eV. Band gap value of ZnO thin film with thickness of 200 nm at pH ranging from 2 to 10 reduces from 3.263eV to 3.200 eV. Furthermore, to evaluate the transducing capacity of the ZnO nanostructure, the refractive index, optoelectric constant, and bulk modulus were analyzed and correlated. The highest thickness (200 nm) of ZnO film, embedded with an interdigitated electrode that behaves as a pH-sensing electrode, could sense pH variations in the range of 2-10. It showed a highly sensitive response of 444 μAmM-1cm-2 with a linear regression of R2 =0.9304. The measured sensitivity of the developed device for pH per unit is 3.72μA/pH. PMID:26167853

Structural, electrical and optical properties of Al-Sn codoped ZnO transparent conducting layer deposited by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Bedia, A.; Bedia, F. Z.; Aillerie, M.; Maloufi, N.

2017-11-01

Low cost Al-Sn codoped ZnO (ATZO) Transparent Conductive Oxide films were deposited by spray pyrolysis on glass substrate. The influence of Al-Sn codoping on the structural, optical and electrical properties of ZnO thin films was studied by comparing the same properties obtained in undoped ZnO, Al doped ZnO (AZO) and Sn doped ZnO (TZO) thin films. The so-obtained films crystallized in hexagonal wurtzite structure. The morphology and structural defects have been investigated by both High resolution Field Effect Scanning Electron Microscopy (FE-SEM) and Raman spectroscopy at 532 nm excitation source. In the visible region, the undoped and doped films show an average transmittance of the order of 85%, while for ATZO thin film, it is of the order of 72%, which points out a degradation of the optical properties due to the co-doping. The optical band gap of ATZO thin film achieves 3.31eV and this shift, compared to the referred samples is attributed to the Burstein-Moss (BM) and band gap narrowing (BGN) opposite effects which is due to the increase of the carrier concentration in degenerate semiconductors. Within all the samples, the ATZO thin film exhibits the lowest electrical resistivity of 4.56 × 10-3 Ωcm with a Hall mobility equal to 2.13 cm2 V-1s-1, and the highest carrier concentration of 6.41 × 1020 cm-3. The performance of ATZO transparent conductive oxide film are determined by its figure of merit (φTC), found equal to 1.69 10-4 Ω-1, which is a suitable value for potentially high-performance solar cell applications.

Vertical Structure of NGC 4631

NASA Astrophysics Data System (ADS)

Ann, Hong Bae; Seo, Mira Seo; Baek, Su-Ja

2011-02-01

We present a deep CCD imaging in B and V bands which allows us to analyze the vertical structure of NGC 4631. We derive the scale heights of the thin and thick disks at a variety of positions along the major axis of the disk. The scale heights of the thin disk are nearly constant while those of the thick disk tend to increase with increasing galactocentric distance. The mean scale heights of the thin disk derived from B and V images are similar to each other (˜450 pc). Instead, those of the thick disk show a strong east-west asymmetry which is caused by the diffuse stellar emission that is most prominent in the north west regions above the disk plane. The ratio of scale heights (z_{thick}/z_{thin}) is about 2.5 in the east side of the disk. However, this ratio is greater than 4 for the thick disk above the disk plane in the west side of the galaxy.

One step electrodeposition of Cu2ZnSnS4 thin films in a novel bath with sulfurization free annealing

NASA Astrophysics Data System (ADS)

Tang, Aiyue; Li, Zhilin; Wang, Feng; Dou, Meiling; Pan, Youya; Guan, Jingyu

2017-04-01

Cu2ZnSnS4 (CZTS) is a quaternary kesterite compound with suitable band gap for thin film solar cells. In most electrodeposition-anneal routes, sulfurization is inevitable because the as-deposited film is lack of S. In this work, a novel green electrolyte was designed for synthesizing CZTS thin films with high S content. In the one-step electrodeposition, K4P2O7 and C7H6O6S were added to form complex with metallic ions in the electrolyte, which could attribute to co-deposition. The as-deposited film obtained high S content satisfying stoichiometry. After a sulfurization free annealing, the continuous and uniform CZTS thin film was obtained, which had pure kesterite structure and a suitable band gap of 1.53 eV. Electrodeposition mechanism investigation revealed that the K4P2O7 prevented the excessive deposition of Cu2+ and Sn2+. The C7H6O6S promoted the reduction of Zn2+. So the additives narrowed the co-deposition potentials of the metallic elements through a synergetic effect. They also promoted the reduction of S2O32- to ensure the co-deposition of the four elements and the stoichiometry. The sulfurization free annealing process can promote the commercialization of CZTS films and the successful design principle of environmental friendly electrolytes could be applied in other electrodeposition systems.

Stable prevalence of obesity in Swedish schoolchildren from 2008 to 2013 but widening socio-economic gap in girls.

PubMed

Moraeus, Lotta; Lissner, Lauren; Sjöberg, Agneta

2014-12-01

The aim of this study was to follow the 5-year prevalence of overweight, obesity and thinness in 7- to 9-year-old children in West Sweden and to investigate whether trends differed according to gender and socio-economic status. Cross-sectional anthropometric measurements of three cohorts in grades one and two were performed in 3492 7- to 9-year-old children in 2008, 2010 and 2013. For body mass index classification, the IOTF/Cole and WHO 2007 references were used. Percentage of inhabitants with high education in the school area was used for socio-economic classification. Between 2008, 2010 and 2013, the overall time-trends in overweight 17.7%, 19.3% and 18.8%, obesity 3.2%, 3.3% and 3.1%, and thinness 6.5%, 4.7% and 6.9%, respectively, were fairly stable using the IOTF/Cole references. Thinness defined by the Cole reference increased in girls. The socio-economic gradient for overweight and obesity was clear by both references, but using the IOTF reference, the gap increased for obesity among girls (p = 0.024). No significant trends were observed with the WHO reference. The overall prevalence of overweight and obesity was stable over 5 years, but we detected growing inequality in obesity and increasing prevalence of thinness in girls. With these regionally representative data, we can draw conclusions about West Sweden, despite an absence of continued national surveillance. ©2014 Foundation Acta Paediatrica. Published by John Wiley & Sons Ltd.

Observation of reduced phase transition temperature in N-doped thermochromic film of monoclinic VO2

NASA Astrophysics Data System (ADS)

Wan, Meinan; Xiong, Mo; Li, Neng; Liu, Baoshun; Wang, Shuo; Ching, Wai-Yim; Zhao, Xiujian

2017-07-01

Research on monoclinic (M1) phase of VO2 has attracted a great of interest for smart coating applications due to its exceptional thermochromic property. Herein, we report the results using a novel approach to synthesize N-doped VO2(M1) thin films with high purity by heat treatment in NH3 atmosphere. The N dopant in the film can be regulated by varying NH3 concentration during the annealing process. We find that the N atoms are located at the interstitial sites or substitute oxygen atoms, and the V-N bonds in the VO2 thin films increase with NH3 concentration. The metal to insulator transition (MIT) temperature (τc,h) of the VO2 thin film is effectively reduced from 80.0 to 62.9 °C, while the solar modulation efficiency (ΔTsol) and the modulation efficiency at 2000 nm (ΔT2000nm) are 7.36% and 55.6% respectively. The band gap of N-doped VO2 thin films related to MIT (Eg1) is estimated to be as low as 0.18-0.25 eV whereas the band gap associated with the visible transparency (Eg2) is about 1.50-1.58 eV. Based on the highly accurate first-principles calculations, the Eg1 of VO2 (M1) is reduced after substituted or interstitial N-doping, while the Eg2 alters with the mode of N-doping, which is excellent agreement with experimental measurement.

Composite CuFe1 - xSnxO2/p-type silicon photodiodes

NASA Astrophysics Data System (ADS)

Al-Sehemi, Abdullah G.; Mensah-Darkwa, K.; Al-Ghamdi, Ahmed A.; Soylu, M.; Gupta, R. K.; Yakuphanoglu, F.

2017-06-01

CuFe1 - xSnxO2 composite thin film/p-type silicon diodes were prepared on substrate by sol-gel method (x = 0.00, 0.01, 0.03, 0.05, 0.07). The structure of CuFe1 - xSnxO2 composite thin films was studied using XRD analysis and films exhibited amorphous behavior. The elemental compositions and surface morphology of the films were characterized using SEM and EDX. EDX results confirmed the presence of the compositional elements. The optical band gap of CuFe1 - xSnxO2 composite thin films was determined using the optic spectra. The optical band gaps of the CuFe1 - xSnxO2 composite thin films were calculated using optical data and were found to be 3.75, 3.78, 3.80, 3.85 and 3.83 eV for x = 0.00, 0.01, 0.03, 0.05 and 0.07, respectively. The photoresponse and electrical properties of the Al/CuFe1 - xSnxO2/p-Si/Al diode were studied. The barrier height and ideality factor were determined to be averagely 0.67 eV and 2.6, respectively. The electrical and photoresponse characteristics of the diodes have been investigated under dark and solar light illuminations, respectively. The interface states were used to explain the results obtained in present study. CuFe1 - xSnxO2 photodiodes exhibited a high photoresponsivity to be used in optoelectronic applications.

Effect of tree thinning and skidding trails on hydrological connectivity in two Japanese forest catchments

NASA Astrophysics Data System (ADS)

López-Vicente, Manuel; Sun, Xinchao; Onda, Yuichi; Kato, Hiroaki; Gomi, Takashi; Hiraoka, Marino

2017-09-01

Land use composition and patterns influence the hydrological response in mountainous and forest catchments. In plantation forest, management operations (FMO) modify the spatial and temporal dynamics of overland flow processes. However, we found a gap in the literature focussed on modelling hydrological connectivity (HC) in plantation forest under different FMO. In this study, we simulated HC in two steep paired forest subcatchments (K2 and K3, 33.2 ha), composed of Japanese cypress (Chamaecyparis obtusa Endl.) and Japanese cedar (Cryptomeria japonica D. Don) plantations (59% of the total area) against a tree thinning intensity of 50% at different time. Additionally, construction of new skidding trails and vegetation recovery was simulated on five thinning-based scenarios that covered a 40-month test period (July 2010 - October 2013). As a future scenario, six check-dams located in the main streams were proposed to reduce sediment and radionuclide delivery. An updated version of Borselli's index of runoff and sediment connectivity was run, using the D-infinity flow accumulation algorithm and exploiting three 0.5-m resolution digital elevation models. On the basis of the pre-FMO scenario, HC increased at catchment scale owing to tree thinning and the new skidding trails. This change was more noticeable within the area affected by the FMO, where HC increased by 11.4% and 10.5% in the cypress and cedar plantations in K2 respectively and by 8.8% in the cedar plantation in K3. At hillslope plot and stream scales, the evolution in the values of HC was less evident, except the increment (by 5.4%) observed in the streams at K2 after the FMO. Progressive vegetation recovery after the FMO triggered a slight reduction of connectivity in all compartments of both subcatchments. Forest roads and especially skidding trails presented the highest values of HC, appearing as the most efficient features connecting the different vegetation patches with the stream network. The spatial and temporal evolution of HC over the five past scenarios correlated well with the observed changes in runoff yield, as well as with the available values of rainfall interception and throughfall before, during, and after the FMO. The simulation of the proposed scenario recommends the construction of check-dams as effective landscape features to somewhat reduce HC and thus to decrease the sediment and radionuclide delivery rates from the two subcatchments.

Effect of interfacial lattice mismatch on bulk carrier concentration and band gap of InN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S. M.

The issue of ambiguous values of the band gap (0.6 to 2 eV) of InN thin film in literature has been addressed by a careful experiment. We have grown wurtzite InN films by PA-MBE simultaneously on differently modified c-plane sapphire substrates and characterized by complementary structural and chemical probes. Our studies discount Mie resonances caused by metallic In segregation at grain boundaries as the reason for low band gap values ( Almost-Equal-To 0.6 eV) and also the formation of Indium oxides and oxynitrides as the cause for high band gap value ( Almost-Equal-To 2.0 eV). It is observed that polycrystallinitymore » arising from azimuthal miss-orientation of c-oriented wurtzite InN crystals increases the carrier concentration and the band gap values. We have reviewed the band gap, carrier concentration, and effective mass of InN in literature and our own measurements, which show that the Moss-Burstein relation with a non-parabolic conduction band accounts for the observed variation of band gap with carrier concentration.« less

CDTE alloys and their application for increasing solar cell performance

NASA Astrophysics Data System (ADS)

Swanson, Drew E.

Cadmium Telluride (CdTe) thin film solar is the largest manufactured solar cell technology in the United States and is responsible for one of the lowest costs of utility scale solar electricity at a purchase agreement of $0.0387/kWh. However, this cost could be further reduced by increasing the cell efficiency. To bridge the gap between the high efficiency technology and low cost manufacturing, a research and development tool and process was built and tested. This fully automated single vacuum PV manufacturing tool utilizes multiple inline close space sublimation (CSS) sources with automated substrate control. This maintains the proven scalability of the CSS technology and CSS source design but with the added versatility of independent substrate motion. This combination of a scalable deposition technology with increased cell fabrication flexibility has allowed for high efficiency cells to be manufactured and studied. The record efficiency of CdTe solar cells is lower than fundamental limitations due to a significant deficit in voltage. It has been modeled that there are two potential methods of decreasing this voltage deficiency. The first method is the incorporation of a high band gap film at the back contact to induce a conduction-band barrier that can reduce recombination by reflecting electrons from the back surface. The addition of a Cd1-x MgxTe (CMT) layer at the back of a CdTe solar cell should induce this desired offset and reflect both photoelectrons and forward-current electrons away from the rear surface. Higher collection of photoelectrons will increase the cells current and the reduction of forward current will increase the cells voltage. To have the optimal effect, CdTe must have reasonable carrier lifetimes and be fully depleted. To achieve this experimentally, CdTe layers have been grown sufficiently thin to help produce a fully depleted cell. A variety of measurements including performance curves, transmission electron microscopy, x-ray photoelectron spectroscopy, and energy-dispersive x-ray spectroscopy were performed to characterize these cells. Voltage improvements on the order of 50 mV are presented at a thin (1 ?m) CdTe absorber condition. However an overall reduction in fill factor (FF) is seen, with a strong reduction in FF as the magnesium incorporation is increased. Detailed material characterization shows the formation of oxides at the back of CdMgTe during the passivation process. A CdTe capping layer is added to reduce oxidation and help maintain the uniformity of the CdMgTe layer. A tellurium back contact is also added in place of a carbon paint back contact, reducing the impact of the valance band offset (VBO) from the CMT. With the addition of the capping layer and tellurium back contact a consistent 50 mV increase is seen with improved FF. However this voltage increase is well below modeled Voc increases of 150 mV. CMT double hetero-structures are manufactured and analyzed to estimate the interface recombination at the CdTe/CMT interface. The CdTe/CMT interface is approximated at 2*105 cm s-1 and modeling is referenced predicting significant reduction in performance based on this interface quality. To improve interface quality by removing the need for a vacuum break, the deposition hardware is incorporated into the primary deposition system. Second, CdTe has a somewhat higher band gap than optimal for single-junction terrestrial solar-cell power generation. A reduction in the band gap could therefore result in an overall improvement in performance. To reduce the band gap, selenium was alloyed with CdTe using a novel co-sublimation extension of the close-space-sublimation process. Co-sublimated layers of CdSeTe with various selenium concentrations were characterized for optical absorption and atomic concentrations, as well as to track changes in their morphology and crystallinity. The lower band-gap CdSeTe films were then incorporated into the front of CdTe cells. This two-layer band-gap structure demonstrated higher current collection and increased quantum efficiency at longer wavelengths. Material characterization shows the diffusion of selenium through the CdTe during passivation resulting in improved in lifetime and a reduced voltage deficit at lower band gaps.

Thin film mechanics

NASA Astrophysics Data System (ADS)

Cooper, Ryan C.

This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate the role of grain boundaries on the strength of chemical vapor deposited graphene. The results from these studies suggest that two dimensional films have remarkably high strength-reaching the intrinsic limit of molecular bonds. Chapter 5 explores the viscoelastic properties of heterogeneous polydimethylsiloxane (PDMS) microfilms through dynamic nanoindentation. PDMS microfilms are irradiated with an electron beam creating a 3 m-thick film with an increased cross-link density. The change in mechanical properties of PDMS due to thermal history and accelerator have been explored by a variety of tests, but the effect of electron beam irradiation is still unknown. The resulting structure is a stiff microfilm embedded in a soft rubber with some transformational strain induced by the cross-linking volume changes. Chapter 5 employs a combination of dynamic nanoindentation and finite element analysis to determine the change in stiffness as a function of electron beam irradiation. The experimental results are compared to the literature. The results of these experimental and numerical techniques provide exciting opportu- nities in future research. Two dimensional materials and flexible thin films are exciting materials for novel applications with new form factors, such as flexible electronics and microfluidic devices. The results herein indicate that you can accurately model the strength of two dimsensional materials and that these materials are robust against nanoscale defects. The results also reveal local variation of mechanical properties in PDMS microfilms. This allows one to design substrates that flex with varying amounts of strain on the surface. Combining the mechanics of two dimensional materials with that of a locally irradiated PDMS film could achieve a new class of flexible microelectromechanical systems. Large-scale growth of two dimensional materials will be structurally robust-even in the presence of nanostructural defects-and PDMS microfilms can be irradiated to vary strain of the electromechanical systems. These systems could be designed to investigate electromechanical coupling in two dimensional films or for a substitute to traditional silicon microdevices. (Abstract shortened by UMI.)

Heterogeneous photocatalytic degradation of toluene in static environment employing thin films of nitrogen-doped nano-titanium dioxide

NASA Astrophysics Data System (ADS)

Kannangara, Yasun Y.; Wijesena, Ruchira; Rajapakse, R. M. G.; de Silva, K. M. Nalin

2018-04-01

Photocatalytic semiconductor thin films have the ability to degrade volatile organic compounds (VOCs) causing numerous health problems. The group of VOCs called "BTEX" is abundant in houses and indoor of automobiles. Anatase phase of TiO2 has a band gap of 3.2 eV and UV radiation is required for photogeneration of electrons and holes in TiO2 particles. This band gap can be decreased significantly when TiO2 is doped with nitrogen (N-TiO2). Dopants like Pd, Cd, and Ag are hazardous to human health but N-doped TiO2 can be used in indoor pollutant remediation. In this research, N-doped TiO2 nano-powder was prepared and characterized using various analytical techniques. N-TiO2 was made in sol-gel method and triethylamine (N(CH2CH3)3) was used as the N-precursor. Modified quartz cell was used to measure the photocatalytic degradation of toluene. N-doped TiO2 nano-powder was illuminated with visible light (xenon lamp 200 W, λ = 330-800 nm, intensity = 1 Sun) to cause the degradation of VOCs present in static air. Photocatalyst was coated on a thin glass plate, using the doctor-blade method, was inserted into a quartz cell containing 2.00 µL of toluene and 35 min was allowed for evaporation/condensation equilibrium and then illuminated for 2 h. Remarkably, the highest value of efficiency 85% was observed in the 1 μm thick N-TiO2 thin film. The kinetics of photocatalytic degradation of toluene by N-TiO2 and P25-TiO2 has been compared. Surface topology was studied by varying the thickness of the N-TiO2 thin films. The surface nanostructures were analysed and studied with atomic force microscopy with various thin film thicknesses.

Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS-Bi2S3 thin films prepared by solution growth technique at room temperature

NASA Astrophysics Data System (ADS)

Shaikh, Shaheed U.; Siddiqui, Farha Y.; Desale, Deepali J.; Ghule, Anil V.; Singh, Fouran; Kulriya, Pawan K.; Sharma, Ramphal

2015-01-01

CdS-Bi2S3 bi-layer thin films have been deposited by chemical bath deposition method on Indium Tin Oxide glass substrate at room temperature. The as-deposited thin films were annealed at 250 °C in an air atmosphere for 1 h. An air annealed thin film was irradiated using Au9+ ions with the energy of 120 MeV at fluence 5×1012 ions/cm2 using tandem pelletron accelerator. The irradiation induced modifications were studied using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Raman spectroscopy, UV spectroscopy and I-V characteristics. XRD study reveals that the as-deposited thin films were nanocrystalline in nature. The decrease in crystallite size, increase in energy band gap and resistivity were observed after irradiation. Results are explained on the basis of energy deposited by the electronic loss after irradiation. The comparative results of as-deposited, air annealed and irradiated CdS-Bi2S3 bi-layer thin films are presented.

Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

NASA Astrophysics Data System (ADS)

Muslih, E. Y.; Kim, K. H.

2017-07-01

Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

Lα and Mαβ X-ray production cross-sections of Bi by 6-30 keV electron impact

NASA Astrophysics Data System (ADS)

Liang, Y.; Xu, M. X.; Yuan, Y.; Wu, Y.; Qian, Z. C.; Chang, C. H.; Mei, C. S.; Zhu, J. J.; Moharram, K.

2017-12-01

In this paper, the Lα and Mαβ X-ray production cross-sections for Bi impacted by 6-30 keV electron have been measured. The experiments were performed at a Scanning Electron Microscope equipped with a silicon drift detector. The thin film with thick C substrate and the thin film deposited on self-supporting thin C film were both used as the targets to make a comparison. For the thick carbon substrate target, the Monte Carlo method has been used to eliminate the contribution of backscattering particles. The measured data are compared with the DWBA theoretical model and the experimental results in the literature. The experimental data for the thin film with thick C substrate target and the thin film deposited on self-supporting thin C film target are within reasonable gaps. The DWBA theoretical model gives good fit to the experimental data both for L- and M- shells. Besides, we also analyze the reasons why the discrepancies exist between our measurements and the experimental results in the literature.

Colossal terahertz nonlinearity of tunneling van der Waals gap (Conference Presentation)

NASA Astrophysics Data System (ADS)

Bahk, Young-Mi; Kang, Bong Joo; Kim, Yong Seung; Kim, Joon-Yeon; Kim, Won Tae; Kim, Tae Yun; Kang, Taehee; Rhie, Ji Yeah; Han, Sanghoon; Park, Cheol-Hwan; Rotermund, Fabian; Kim, Dai-Sik

2016-09-01

We manufactured an array of three angstrom-wide, five millimeter-long van der Waals gaps of copper-graphene-copper composite, in which unprecedented nonlinearity was observed. To probe and manipulate van der Waals gaps with long wavelength electromagnetic waves such as terahertz waves, one is required to fabricate vertically oriented van der Waals gaps sandwiched between two metal planes with an infinite length in the sense of being much larger than any of the wavelengths used. By comparison with the simple vertical stacking of metal-graphene-metal structure, in our structure, background signals are completely blocked enabling all the light to squeeze through the gap without any strays. When the angstrom-sized van der Waals gaps are irradiated with intense terahertz pulses, the transient voltage across the gap reaches up to 5 V with saturation, sufficiently strong to deform the quantum barrier of angstrom gaps. The large transient potential difference across the gap facilitates electron tunneling through the quantum barrier, blocking terahertz waves completely. This negative feedback of electron tunneling leads to colossal nonlinear optical response, a 97% decrease in the normalized transmittance. Our technology for infinitely long van der Waals gaps can be utilized for other atomically thin materials than single layer graphene, enabling linear and nonlinear angstrom optics in a broad spectral range.

Improvement of band gap profile in Cu(InGa)Se{sub 2} solar cells through rapid thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, D.S.; College of Mathematics and Physics, Shanghai University of Electric Power, Shanghai, 200090; Yang, J.

Highlights: • Proper RTA treatment can effectively optimize band gap profile to more expected level. • Inter-diffusion of atoms account for the improvement of the graded band gap profile. • The variation of the band gap profile created an absolute gain in the efficiency by 1.22%. - Abstract: In the paper, the effect of rapid thermal annealing on non-optimal double-graded band gap profiles was investigated by using X-ray photoelectron spectroscopy and capacitance–voltage measurement techniques. Experimental results revealed that proper rapid thermal annealing treatment can effectively improve band gap profile to more optimal level. The annealing treatment could not only reducemore » the values of front band gap and minimum band gap, but also shift the position of the minimum band gap toward front electrode and enter into space charge region. In addition, the thickness of Cu(InGa)Se{sub 2} thin film decreased by 25 nm after rapid thermal annealing treatment. All of these modifications were attributed to the inter-diffusion of atoms during thermal treatment process. Simultaneously, the variation of the band gap profile created an absolute gain in the efficiency by 1.22%, short-circuit current density by 2.16 mA/cm{sup 2} and filled factor by 3.57%.« less

Electrochemical and physical properties of electroplated CuO thin films.

PubMed

Dhanasekaran, V; Mahalingam, T

2013-01-01

Cupric oxide thin films have been prepared on ITO glass substrates from an aqueous electrolytic bath containing CuSO4 and tartaric acid. Growth mechanism has been analyzed using cyclic voltammetry. The role of pH on the structural, morphological, compositional, electrical and optical properties of CuO films is investigated. The structural studies revealed that the deposited films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. X-ray line profile analysis has been carried out to determine the microstructural parameters of CuO thin films. The pyramid shaped grains are observed from SEM and AFM images. The optical band gap energy and electrical activation energy is found to be 1.45 and 0.37 eV, respectively. Also, the optical constants of CuO thin films such as refractive index (n), complex dielectric constant (epsilon) extinction coefficient (k) and optical conductivity (sigma) are evaluated.

Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Kamaruzaman, Dayana; Ahmad, Nurfadzilah; Annuar, Ishak; Rusop, Mohamad

2013-11-01

Nanostructured iodine-post doped amorphous carbon (a-C:I) thin films were prepared from camphor oil using a thermal chemical vapor deposition (TCVD) technique at different doping temperatures. The structural properties of the films were studied by field-emission scanning electron microscopy (FESEM), energy-dispersive spectroscopy (EDS), Raman, and Fourier transform infrared (FTIR) studies. FESEM and EDS studies showed successful iodine doping. FTIR and Raman studies showed that the a-C:I thin films consisted of a mixture of sp2- and sp3-bonded carbon atoms. The optical and electrical properties of a-C:I thin films were determined by UV-vis-NIR spectroscopy and current-voltage (I-V) measurement respectively. The optical band gap of a-C thin films decreased upon iodine doping. The highest electrical conductivity was found at 400 °C doping. Heterojunctions are confirmed by rectifying the I-V characteristics of an a-C:I/n-Si junction.

Room temperature chemical bath deposition of cadmium selenide, cadmium sulfide and cadmium sulfoselenide thin films with novel nanostructures

NASA Astrophysics Data System (ADS)

VanderHyde, Cephas A.; Sartale, S. D.; Patil, Jayant M.; Ghoderao, Karuna P.; Sawant, Jitendra P.; Kale, Rohidas B.

2015-10-01

A simple, convenient and low cost chemical synthesis route has been used to deposit nanostructured cadmium sulfide, selenide and sulfoselenide thin films at room temperature. The films were deposited on glass substrates, using cadmium acetate as cadmium ion and sodium selenosulfate/thiourea as a selenium/sulfur ion sources. Aqueous ammonia was used as a complex reagent and also to adjust the pH of the final solution. The as-deposited films were uniform, well adherent to the glass substrate, specularly reflective and red/yellow in color depending on selenium and sulfur composition. The X-ray diffraction pattern of deposited cadmium selenide thin film revealed the nanocrystalline nature with cubic phase; cadmium sulfide revealed mixture of cubic along with hexagonal phase and cadmium sulfoselenide thin film were grown with purely hexagonal phase. The morphological observations revealed the growth and formation of interesting one, two and three-dimensional nanostructures. The band gap of thin films was calculated and the results are reported.

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

Enhanced photo response of mesoporous nanostructured CdS thin film via electrospray aerosol deposition technique

NASA Astrophysics Data System (ADS)

Logu, T.; Soundarrajan, P.; Sankarasubramanian, K.; Sethuraman, K.

2018-04-01

In this work, a high crystalline and mesoporous nanostructured cadmium sulfide (CdS) thin film was successfully grown on the FTO substrates using facile Electrospray Aerosol Deposition (ESAD) technique. The structural, optical, morphological and electrical properties of CdS thin film have been systematically examined. CdS thin film exhibits the hexagonal wurtzite crystal structure with polycrystalline nature. The optical band gap energy of the prepared film was estimated from the Tauc plot and is 2.43 eV. The SEM and AFM images show that the well-interconnected CdS nanoparticles gives mesoporous like morphology. The fine aerosol generated from the ESAD process induces the alteration in the surface morphological structure of deposited CdS film that consequences in enhanced electrical and photo-physical properties. The photoconductivity of the sample has been studied which demonstrates significant photo current. The present study predicts that mesoporous nanostructured CdS thin film would be given a special interest for optoelectronic applications.

Electrical and optical properties of p-type codoped ZnO thin films prepared by spin coating technique

NASA Astrophysics Data System (ADS)

Pathak, Trilok Kumar; Kumar, Vinod; Swart, H. C.; Purohit, L. P.

2016-03-01

Undoped, doped and codoped ZnO thin films were synthesized on glass substrates using a spin coating technique. Zinc acetate dihydrate, ammonium acetate and aluminum nitrate were used as precursor for zinc, nitrogen and aluminum, respectively. X-ray diffraction shows that the thin films have a hexagonal wurtzite structure for the undoped, doped and co-doped ZnO. The transmittance of the films was above 80% and the band gap of the film varied from 3.20 eV to 3.24 eV for undoped and doped ZnO. An energy band diagram to describe the photoluminescence from the thin films was also constructed. This diagram includes the various defect levels and possible quasi-Fermi levels. A minimum resistivity of 0.0834 Ω-cm was obtained for the N and Al codoped ZnO thin films with p-type carrier conductivity. These ZnO films can be used as a window layer in solar cells and in UV lasers.

Optical and structural properties of indium doped bismuth selenide thin films

NASA Astrophysics Data System (ADS)

Pavagadhi, Himanshu; Vyas, S. M.; Patel, Piyush; Patel, Vimal; Patel, Jaydev; Jani, M. P.

2015-08-01

In: Bi2Se3 crystals were grown by Bridgman method at a growth velocity of 0.5cm/h with temperature gradient of 650 C/cm in our laboratory. The thin films of In:Bi2se3 were grown on amorphous substrate (glass) at a room temperature under a pressure of 10-4Pa by thermal evaporation technique. Thin film were deposited at various thicknesses and optical absorption spectrum of such thin films, obtain in wave no. range 300 to 2600 cm-1. The optical energy gap calculated from this data were found to be inverse function of square of thickness, particularly for thickness about 1800 Å or less. This dependence is explained in terms of quantum size effect. For thicker films, the bandgap is found to be independent of film thickness. For the surface stud of the as grown thin film by using AFM, which shows continuous film with some step height and surface roughness found in terms of few nm and particle size varies with respect to thickness.

Influence of defects on the absorption edge of InN thin films: The band gap value

NASA Astrophysics Data System (ADS)

Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

2007-07-01

We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

NASA Astrophysics Data System (ADS)

Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

2018-04-01

ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

a Brief Survey on Basic Properties of Thin Films for Device Application

NASA Astrophysics Data System (ADS)

Rao, M. C.; Shekhawat, M. S.

Thin film materials are the key elements of continued technological advances made in the fields of optoelectronic, photonic and magnetic devices. Thin film studies have directly or indirectly advanced many new areas of research in solid state physics and chemistry which are based on phenomena uniquely characteristic of the thickness, geometry and structure of the film. The processing of materials into thin films allows easy integration into various types of devices. Thin films are extremely thermally stable and reasonably hard, but they are fragile. On the other hand organic materials have reasonable thermal stability and are tough, but are soft. Thin film mechanical properties can be measured by tensile testing of freestanding films and by the micro beam cantilever deflection technique, but the easiest way is by means of nanoindentation. Optical experiments provide a good way of examining the properties of semiconductors. Particularly measuring the absorption coefficient for various energies gives information about the band gaps of the material. Thin film materials have been used in semiconductor devices, wireless communications, telecommunications, integrated circuits, rectifiers, transistors, solar cells, light-emitting diodes, photoconductors and light crystal displays, lithography, micro- electromechanical systems (MEMS) and multifunctional emerging coatings, as well as other emerging cutting technologies.

Doping induced c-axis oriented growth of transparent ZnO thin film

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Joshi, U. S.

2018-04-01

c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The IZO thin films revealed hexagonal wurtzite structure. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The particle size of the IZO films were increase as doping content increases from 2% to 5%. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.

Comparing Novel Multi-Gap Resistive Plate Chamber Models

NASA Astrophysics Data System (ADS)

Stien, Haley; EIC PID Consortium Collaboration

2016-09-01

Investigating nuclear structure has led to the fundamental theory of Quantum Chromodynamics. An Electron Ion Collider (EIC) is a proposed accelerator that would further these investigations. In order to prepare for the EIC, there is an active detector research and development effort. One specific goal is to achieve better particle identification via improved Time of Flight (TOF) detectors. A promising option is the Multi-Gap Resistive Plate Chamber (mRPC). These detectors are similar to the more traditional RPCs, but their active gas gaps have dividers to form several thinner gas gaps. These very thin and accurately defined gas gaps improve the timing resolution of the chamber, so the goal is to build an mRPC with the thinnest gaps to achieve the best possible timing resolution. Two different construction techniques have been employed to make two mRPCs. The first technique is to physically separate the gas gaps with sheets of glass that are .2mm thick. The second technique is to 3D print the layered gas gaps. A comparison of these mRPCs and their performances will be discussed and the latest data presented. This research was supported by US DOE MENP Grant DE-FG02-03ER41243.

Counter-intuitive experimental evidence on the initiation of radical crack in ceramic thin films at the atomic scale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhuang, Chunqiang, E-mail: chunqiang.zhuang@bjut.edu.cn; Li, Zhipeng; Lin, Songsheng

2015-10-15

The basic issue related to radial crack in ceramic thin films has received considerable attention due to the fact that the radial crack plays an important role in evaluating the toughness properties of ceramic materials. In this work, an atomic-scale new experimental evidence is clearly presented to reveal the counter-intuitive initiation, the nucleation and the propagation mechanism of the radial crack in Al-Cr-N ceramic thin films.

Technical advisory guide (TAG) for bonded wearing course pilot projects.

DOT National Transportation Integrated Search

2003-10-01

A bonded wearing course (BWC) is a gap graded, ultra thin hot-mix asphalt (HMA) mixture applied : over a thick polymer modified asphalt emulsion membrane. The emulsion membrane seals the : existing surface and produces high binder content at the inte...

Engineering of an ultra-thin molecular superconductor by charge transfer

DOEpatents

Hla, Saw Wai; Hassanien, Abdelrahim; Kendal, Clark

2016-06-07

A method of forming a superconductive device of a single layer of (BETS).sub.2GaCl.sub.4 molecules on a substrate surface which displays a superconducting gap that increases exponentially with the length of the molecular chain is provided.

Scaling during capillary thinning of particle-laden drops

NASA Astrophysics Data System (ADS)

Thete, Sumeet; Wagoner, Brayden; Basaran, Osman

2017-11-01

A fundamental understanding of drop formation is crucial in many applications such as ink-jet printing, microfluidic devices, and atomization. During drop formation, the about-to-form drop is connected to the fluid hanging from the nozzle via a thinning filament. Therefore, the physics of capillary thinning of filaments is key to understanding drop formation and has been thoroughly studied for pure Newtonian fluids using theory, simulations, and experiments. In some of the applications however, the forming drop and hence the thinning filament may contain solid particles. The thinning dynamics of such particle-laden filaments differs radically from that of particle-free filaments. Moreover, our understanding of filament thinning in the former case is poor compared to that in the latter case despite the growing interest in pinch-off of particle-laden filaments. In this work, we go beyond similar studies and experimentally explore the impact of solid particles on filament thinning by measuring both the radial and axial scalings in the neck region. The results are summarized in terms of a phase diagram of capillary thinning of particle-laden filaments.

Synthesis of nanodimensional orthorhombic SnO2 thin films

NASA Astrophysics Data System (ADS)

Kondkar, V.; Rukade, D.; Kanjilal, D.; Bhattacharyya, V.

2018-04-01

Amorphous thin films of SnO2 are irradiated by swift heavy ions at two different fluences. Unirradiated as well as irradiated films are characterized by glancing angle X-ray diffraction (GAXRD), UV-Vis spectroscopy and atomic force microscopy (AFM). GAXRD study reveals formation of orthorhombic nanophases of SnO2. Nanophase formation is also confirmed by the quantum size effect manifested by blue shift in terms of increase in band gap energy. The size and shape of the irradiation induced surface structures depend on ion fluence.

Plasmon-enhanced electron scattering in nanostructured thin metal films revealed by low-voltage scanning electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailovskii, V., E-mail: v.mikhailovskii@spbu.ru; IRC for Nanotechnology, Research Park, St.-Petersburg State University; Petrov, Yu.

2016-06-17

The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.

Optical and Structural Properties of Ion-implanted InGaZnO Thin Films Studied with Spectroscopic Ellipsometry and Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Park, Jun Woo; Jeong, Pil Seong; Choi, Suk-Ho; Lee, Hosun; Kong, Bo Hyun; Koun Cho, Hyung

2009-11-01

Amorphous InGaZnO (IGZO) thin films were grown using RF sputtering deposition at room temperature and their corresponding dielectric functions were measured. In order to reduce defects and increase carrier concentrations, we examined the effect of forming gas annealing and ion implantation. The band gap energy increased with increasing forming gas annealing temperature. We implanted the IGZO thin films with F- ions in order to decrease oxygen vacancies. For comparison, we also implanted InO- ions. Transmission electron microscopy showed that the amorphous phase undergoes transformation to a nanocrystalline phase due to annealing. We also observed InGaZnO4 nanocrystals having an In-(Ga/Zn) superlattice structure. As the annealing temperature increased, the optical gap energy increased due to crystallization. After annealing, we observed an oxygen-vacancy-related 1.9 eV peak for both unimplanted and InO-implanted samples. However, F- ion implantation substantially reduced the amplitude of the 1.9 eV peak, which disappeared completely at a F fluence of 5×1015 cm-2. We observed other defect-related peaks at 3.6 and 4.2 eV after annealing, which also disappeared after F implantation.

Physics of grain boundaries in polycrystalline photovoltaic semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Yanfa, E-mail: yanfa.yan@utoledo.edu; Yin, Wan-Jian; Wu, Yelong

2015-03-21

Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can bemore » chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.« less

Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique

NASA Astrophysics Data System (ADS)

Albor Aguilera, M. L.; Flores Márquez, J. M.; Remolina Millan, A.; Matsumoto Kuwabara, Y.; González Trujillo, M. A.; Hernández Vásquez, C.; Aguilar Hernandez, J. R.; Hernández Pérez, M. A.; Courel-Piedrahita, M.; Madeira, H. T. Yee

2017-08-01

Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.

The half-metallicity of Co2FeGe full Heusler alloy in (001) thin film: First principles study

NASA Astrophysics Data System (ADS)

Hyun, Jung-Min; Kim, Miyoung

2018-01-01

The electronic and magnetic properties of the Co2FeGe full Heusler alloy in (001) thin film are investigated using the first-principles electronic structure calculations within the density functional theory. We employ various exchange correlation functionals including the local density approximation (LDA), the generalized gradient approximation (GGA), and the additional + U corrections for strong on-site Coulomb interaction of transition metal 3d states, aiming to examine the correlation effect on the electronic structures which determine the spin gap and thus the half-metallicity. Our results reveal that the Co2FeGe thin film is metallic in both LDA and GGA, while the + U correction opens up the spin gap for spin minority channel in GGA+ U but not in LDA+U in contrast to its bulk alloy which is predicted to be half-metallic in both LDA+ U and GGA+ U approaches with total spin magnetic moment of 6 μ B . It is found that the surface states developed around the Fermi level and the enhanced 3d e g - t 2 g band splitting for the spin minority channel due to the correlation effect play critical roles to determine the emergence of the half-metallicity.

Physics of grain boundaries in polycrystalline photovoltaic semiconductors

DOE PAGES

Yan, Yanfa; Yin, Wan-Jian; Wu, Yelong; ...

2015-03-16

Thin-film solar cells based on polycrystalline Cu(In,Ga)Se 2 (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this study, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. Although, in each solar cell device, the GBs can bemore » chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. In conclusion, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.« less

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films

PubMed Central

2012-01-01

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement. PMID:23072433

Enhanced thermoelectric performance in three-dimensional superlattice of topological insulator thin films.

PubMed

Fan, Zheyong; Zheng, Jiansen; Wang, Hui-Qiong; Zheng, Jin-Cheng

2012-10-16

We show that certain three-dimensional (3D) superlattice nanostructure based on Bi2Te3 topological insulator thin films has better thermoelectric performance than two-dimensional (2D) thin films. The 3D superlattice shows a predicted peak value of ZT of approximately 6 for gapped surface states at room temperature and retains a high figure of merit ZT of approximately 2.5 for gapless surface states. In contrast, 2D thin films with gapless surface states show no advantage over bulk Bi2Te3. The enhancement of the thermoelectric performance originates from a combination of the reduction of lattice thermal conductivity by phonon-interface scattering, the high mobility of the topologically protected surface states, the enhancement of Seebeck coefficient, and the reduction of electron thermal conductivity by energy filtering. Our study shows that the nanostructure design of topological insulators provides a possible new way of ZT enhancement.

Spectroscopic Study of Deep Level Emissions from Acceptor Defects in ZnO Thin Films with Oxygen Rich Stoichiometry

NASA Astrophysics Data System (ADS)

Ilyas, Usman; Rawat, R. S.; Tan, T. L.

2013-10-01

This paper reports the tailoring of acceptor defects in oxygen rich ZnO thin films at different post-deposition annealing temperatures (500-800°C) and Mn doping concentrations. The XRD spectra exhibited the nanocrystalline nature of ZnO thin films along with inconsistent variation in lattice parameters suggesting the temperature-dependent activation of structural defects. Photoluminescence emission spectra revealed the temperature dependent variation in deep level emissions (DLE) with the presence of acceptors as dominating defects. The concentration of native defects was estimated to be increased with temperature while a reverse trend was observed for those with increasing doping concentration. A consistent decrease in DLE spectra, with increasing Mn content, revealed the quenching of structural defects in the optical band gap of ZnO favorable for good quality thin films with enhanced optical transparency.

Evaluation of the optical characteristics of c-axis oriented zinc oxide thin films grown by sol gel spin coating technique

NASA Astrophysics Data System (ADS)

Baisakh, K.; Behera, S.; Pati, S.

2018-03-01

In this work we have systematically studied the optical characteristics of synthesized wurzite zinc oxide thin films exhibiting (002) orientation. Using sol gel spin coating technique zinc oxide thin films are grown on pre cleaned fused quartz substrates. Structural properties of the films are studied using X-ray diffraction analysis. Micro structural analysis and thickness of the grown samples are analyzed using field emission scanning electron microscopy. With an aim to investigate the optical characteristics of the grown zinc oxide thin films the transmission and reflection spectra are evaluated in the ultraviolet-visible (UV-VIS) range. Using envelope method, the refractive index, extinction coefficient, absorption coefficient, band gap energy and the thickness of the synthesized films are estimated from the recorded UV-VIS spectra. An attempt has also been made to study the influence of crystallographic orientation on the optical characteristics of the grown films.

Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

NASA Astrophysics Data System (ADS)

Katiyar, R. K.; Sharma, Y.; Barrionuevo, D.; Kooriyattil, S.; Pavunny, S. P.; Young, J. S.; Morell, G.; Weiner, B. R.; Katiyar, R. S.; Scott, J. F.

2015-02-01

Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ˜0.20 V and ˜1.35 mA/cm2, respectively. The band gap of the films was determined to be ˜2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PV properties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

Optical properties of dip coated titanium-di-oxide (TiO2) thin films annealed at different temperatures

NASA Astrophysics Data System (ADS)

Biswas, Sayari; Kar, Asit Kumar

2018-02-01

Titanium dioxide (TiO2) thin films were synthesized by hydrothermal assisted sol-gel dip coating method on quartz substrate. The sol was prepared by hydrothermal method at 90 °C. Dip coating method was used to deposit the thin films. Later films were annealed at four different temperatures -600 °C, 800 °C, 1000 °C and 1200 °C. XRD study showed samples annealed at 600 °C are almost amorphous. At 800 °C, film turns into anatase phase and with further increment of annealing temperature they turn into rutile phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60% was observed in the visible region for the sample annealed at the lowest temperature. Band gap of the prepared films varies from 2.9 eV to 3.5 eV.

Ultra-thin plasma panel radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Peter S.

An ultra-thin radiation detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includesmore » a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.« less

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Aadesh P.; Kodan, Nisha; Mehta, Bodh R., E-mail: brmehta@physics.iitd.ac.in

Highlights: • Growth of TiO{sub 2} thin films with in-situ plasma hydrogenation. • Presence of Ti{sup 2+} states in addition to Ti{sup 3+} states present in pristine TiO{sub 2}. • Change in VBM, work function and band gap in iH:TiO{sub 2}. • Enhanced photocurrent density as compared to pristine TiO{sub 2} films. - Abstract: In this paper, we report the effect of in-situ plasma hydrogenation of TiO{sub 2} (iH:TiO{sub 2}) thin films by the incorporation of known amount of hydrogen in the Ar plasma during rf-sputter deposition of TiO{sub 2} films. As compared to pristine TiO{sub 2} films (∼0.43 mA/cm2more » at 0.23 V vs Ag/AgCl), hydrogenated TiO{sub 2} showed enhanced photoelectrochemical activity in terms of improved photocurrent density of ∼1.08 mA/cm2 (at 0.23 V vs Ag/AgCl). These results are explained in terms of reduction in band gap energy, shift in valence band maximum away from the Fermi level, improved donor density and more negative flat band potential in iH:TiO{sub 2} sample. The presence of Ti{sup 2+} states in iH:TiO{sub 2} films in addition to Ti{sup 3+} states in pristine TiO{sub 2} act as additional electronic states in the TiO{sub 2} band gap and increases the optical absorption in the visible region. This method of in-situ hydrogenation can be used as a general method for improving the properties of metal oxide thin films for photoelectrochemical and photocatalytic applications.« less

Reduced recombination in a surface-sulfurized Cu(InGa)Se2 thin-film solar cell

NASA Astrophysics Data System (ADS)

Kim, Shinho; Nishinaga, Jiro; Kamikawa, Yukiko; Ishizuka, Shogo; Nagai, Takehiko; Koida, Takashi; Tampo, Hitoshi; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

2018-05-01

This study demonstrates surface sulfurization effects on Cu(InGa)Se2 (CIGSe) thin-film solar cells with a single back-graded band gap. Single back-graded CIGSe thin films were prepared via a three-stage process in a high-vacuum molecular beam epitaxial growth chamber and were subsequently annealed in a tube furnace under environmental conditions with H2S gas. After sulfurization, an ∼80- to ∼100-nm-thick CuIn(SSe)2 layer with significantly small Ga contents (CISSe:Ga) was formed on the CIGSe layer. The newly formed CISSe:Ga layer exhibited graded S contents from surface to bulk, thus resulting in a front-graded band gap. In addition, CISSe:Ga was covered with S-enriched CISSe region that was extended from the surface to a depth of a few nm and was depleted of Ga. A device with the sulfurized CIGSe showed reduced recombination at the buffer–absorber interface, in space-charge region and in bulk. Consequently, the open circuit voltage increased from 0.58 V (in the non-sulfurized case) to 0.66 V, and the conversion efficiency improved from 15.5 to 19.4%. This large improvement is caused by the front graded band gap at the surface and the hole-blocking barrier, which suppress recombination at the CdS/CISSe:Ga interface. In addition, sulfurization followed by KF post-deposition treatment (PDT) increased the efficiency to 20.1%. Compared to the untreated sulfurized device, the KF-PDT device delivered an increased carrier lifetime and reduced the recombination in bulk probably because the defects were passivated by the K, which penetrated into the bulk region.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Brebrick, Robert F.; Burger, Arnold; Dudley, Michael; Matyi, Richard J.; Ramachandran, Narayanan; Sha, Yi-Gao; Volz, Martin; Shih, Hung-Dah

2000-01-01

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

NASA Astrophysics Data System (ADS)

Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

2018-06-01

We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

Effect of cadmium incorporation on the properties of zinc oxide thin films

NASA Astrophysics Data System (ADS)

Bharath, S. P.; Bangera, Kasturi V.; Shivakumar, G. K.

2018-02-01

Cd x Zn1- x O (0 ≤ x ≤ 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, Cd x Zn1- x O thin films are subjected to annealing. Both the as-deposited and annealed Cd x Zn1- x O thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed Cd x Zn1- x O thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed Cd x Zn1- x O thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV-Vis spectroscopy shows red shift in the band gap for Cd x Zn1- x O thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films.

Development of Thin Film Thermocouples on Ceramic Materials for Advanced Propulsion System Applications

NASA Technical Reports Server (NTRS)

Holanda, R.

1992-01-01

Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 c. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperature of 1500 C depending on the stability of the particular ceramic substrate.

Thin film thermocouples for high temperature measurement on ceramic materials

NASA Technical Reports Server (NTRS)

Holanda, Raymond

1992-01-01

Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high-heating-rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

Development of thin film thermocouples on ceramic materials for advanced propulsion system applications

NASA Technical Reports Server (NTRS)

Holanda, Raymond

1993-01-01

Thin film thermocouples were developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hr or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

Optical studies of metallo-dielectric photonic crystals

NASA Astrophysics Data System (ADS)

Kamaev, Vladimir

2007-12-01

Metallo-dielectric photonic crystals (MDPCs) are characterized by a large difference between the dielectric constants of the constituents. Owing to their high DC conductivity a broad omnidirectional band gap is formed at low frequencies. At the same time there exist numerous propagating electromagnetic modes at frequencies above a cutoff. This gives a possibility of creating a "transparent" metal: a crystal transparent in the visible spectral range and simultaneously having high DC conductivity. Since the cutoff wavelength linearly scales with the crystal periodicity, in order to make an MDPC with propagating modes in the visible range the crystal periodicity has to be around a quarter micrometer. Fabrication of such a crystal is a challenging task. One of the feasible choices is natural or artificial opals, structures made of silica balls arranged into a close packed fcc lattice. The ball diameters could vary from 200 nm to several microns, allowing the desired optical features to be in the visible spectral range. In the present work we studied metal-infiltrated opals numerically, analytically, and experimentally (Chapters 1 and 4). Both theory and experiment revealed high reflectance of the samples at large wavelengths associated with the low frequency metallic band gap formation, and low reflectance at short wavelengths that has characteristic wiggles. Contrarily, the absorbance is low in the IR region and goes up towards the UV end, which is due to low group velocity of light and high metal absorption in the region. Numerical analysis of thin metal-infiltrated opals (˜3-5 layers) did show a transmission peak around the first reflectance minimum and cutoff frequency. In Chapter 5 we present transmission experiments on thin metal films perforated with periodic arrays of holes or deposited on an opal monolayer. Both types of 2D MDPCs exhibited anomalous transmission peaks associated with surface plasma excitations. It was shown that the phenomenon could be utilized in organic light emitting diodes (OLEDs) and promotes an enhancement in the OLED electroluminescence quantum efficiency (ELQE).

II-I2-IV-VI4 (II = Sr,Ba; I = Cu,Ag; IV = Ge,Sn; VI = S,Se): Earth-Abundant Chalcogenides for Thin Film Photovoltaics

NASA Astrophysics Data System (ADS)

Zhu, Tong; Huhn, William P.; Shin, Donghyeop; Mitzi, David B.; Blum, Volker; Saparov, Bayrammurad

Chalcogenides such as CdTe, CIGSSe, and CZTSSe are successful for thin film photovoltaics (PV) but contain elements that are rare, toxic, or prone to the formation of detrimental antisite disorder. Recently, the BaCu2SnS4-xSex system has been shown to offer a prospective path to circumvent these problems. While early prototypes show efficiencies of a few percent, many avenues remain to optimize the materials, including the underlying chemical composition. In this work, we explore 16 compounds II-I2-IV-VI4 to help identify new candidate materials for PV, with predictions based on both known experimental and computationally derived structures that belong to five different space groups. We employ hybrid density functional theory (HSE06) to explore the band gap tunability by substituting different elements, and other characteristics such as the effective mass and the absorption coefficient. Compounds containing Cu (rather than Ag) are found to have direct or nearly direct band gaps. Depending on the compound, replacing S with Se leads to a decrease of the predicted band gaps by 0.2-0.8 eV and to somewhat decreasing hole effective masses.

Investigations of the drift mobility of carriers and density of states in nanocrystalline CdS thin films

NASA Astrophysics Data System (ADS)

Singh, Baljinder; Singh, Janpreet; Kaur, Jagdish; Moudgil, R. K.; Tripathi, S. K.

2016-06-01

Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-cleaned glass substrate at room temperature (300 K) by thermal evaporation technique using inert gas condensation (IGC) method. X-ray diffraction (XRD) analysis reveals that the films crystallize in hexagonal structure with preferred orientation along [002] direction. Scanning electron microscope (SEM) and Transmission electron microscope (TEM) studies reveal that grains are spherical in shape and uniformly distributed over the glass substrates. The optical band gap of the film is estimated from the transmittance spectra. Electrical parameters such as Hall coefficient, carrier type, carrier concentration, resistivity and mobility are determined using Hall measurements at 300 K. Transit time and mobility are estimated from Time of Flight (TOF) transient photocurrent technique in gap cell configuration. The measured values of electron drift mobility from TOF and Hall measurements are of the same order. Constant Photocurrent Method in ac-mode (ac-CPM) is used to measure the absorption spectra in low absorption region. By applying derivative method, we have converted the measured absorption data into a density of states (DOS) distribution in the lower part of the energy gap. The value of Urbach energy, steepness parameter and density of defect states have been calculated from the absorption and DOS spectra.

Synthesis of a low-band-gap small molecule based on acenaphthoquinoxaline for efficient bulk heterojunction solar cells.

PubMed

Mikroyannidis, J A; Kabanakis, A N; Kumar, Anil; Sharma, S S; Vijay, Y K; Sharma, G D

2010-08-03

A novel small molecule (SM) with a low-band-gap based on acenaphthoquinoxaline was synthesized and characterized. It was soluble in polar solvents such as N,N-dimethylformamide and dimethylacetamide. SM showed broad absorption curves in both solution and thin films with a long-wavelength maximum at 642 nm. The thin film absorption onset was located at 783 nm, which corresponds to an optical band gap of 1.59 eV. SM was blended with PCBM to study the donor-acceptor interactions in the blended film morphology and the photovoltaic response of the bulk heterojunction (BHJ) devices. The cyclic voltammetry measurements of the materials revealed that the HOMO and LUMO levels of SM are well aligned with those of PCBM, allowing efficient photoinduced charge transfer and suitable open circuit voltage, leading to overall power conversion efficiencies (PCEs) of approximately 2.21 and 3.23% for devices with the as-cast and thermally annealed blended layer, respectively. The increase in the PCE with the thermally annealed blend is mainly attributed to the improvement in incident photon to current efficiency (IPCE) and short circuit photocurrent (J(sc)). Thermal annealing leads to an increase in both the crystallinity of the blend and hole mobility, which improves the PCE.

Lateral assembly of oxidized graphene flakes into large-scale transparent conductive thin films with a three-dimensional surfactant 4-sulfocalix[4]arene

PubMed Central

Sundramoorthy, Ashok K.; Wang, Yilei; Wang, Jing; Che, Jianfei; Thong, Ya Xuan; Lu, Albert Chee W.; Chan-Park, Mary B.

2015-01-01

Graphene is a promising candidate material for transparent conductive films because of its excellent conductivity and one-carbon-atom thickness. Graphene oxide flakes prepared by Hummers method are typically several microns in size and must be pieced together in order to create macroscopic films. We report a macro-scale thin film fabrication method which employs a three-dimensional (3-D) surfactant, 4-sulfocalix[4]arene (SCX), as a lateral aggregating agent. After electrochemical exfoliation, the partially oxidized graphene (oGr) flakes are dispersed with SCX. The SCX forms micelles, which adsorb on the oGr flakes to enhance their dispersion, also promote aggregation into large-scale thin films under vacuum filtration. A thin oGr/SCX film can be shaved off from the aggregated oGr/SCX cake by immersing the cake in water. The oGr/SCX thin-film floating on the water can be subsequently lifted from the water surface with a substrate. The reduced oGr (red-oGr) films can be as thin as 10−20 nm with a transparency of >90% and sheet resistance of 890 ± 47 kΩ/sq. This method of electrochemical exfoliation followed by SCX-assisted suspension and hydrazine reduction, avoids using large amounts of strong acid (unlike Hummers method), is relatively simple and can easily form a large scale conductive and transparent film from oGr/SCX suspension. PMID:26040436

Asymptotic analysis of corona discharge from thin electrodes

NASA Technical Reports Server (NTRS)

Durbin, P. A.

1986-01-01

The steady discharge of a high-voltage corona is analyzed as a singular perturbation problem. The small parameter is the ratio of the length of the ionization region to the total gap length. By this method, current versus voltage characteristics can be calculated analytically.

Two-phase Hele-Shaw flow with a moving contact line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weinstein, S.J.; Ungar, L.H.; Dussan, E.B.

1988-01-01

An asymptotic analysis is presented for Hele-Shaw viscous fingering with a moving contact line at flow rates. As in problems where a thin film is present instead of a contact line, the narrow gap limit is nonuniform, and interfacial boundary conditions valid for the Hele-Shaw equations must be determined in order to predict the flow field and interface shape. Many well-posed boundary-value problems can be identified, each corresponding to a different flow regime characterized by the relative sizes of the capillary number (dimensionless velocity) and the dimensionless gap width. These problems incorporate terms corresponding to the gapwise component of themore » interfacial curvature (the curvature in the cross-sectional view of the Hele-Shaw cell) and spanwise curvature (seen in the top view of the cell) in different ways. Nonunique interface solutions typically arise as in the analogous thin film problems. The relationships between the curvature terms, the spectra of allowable solutions, and the implications for stability are discussed.« less

Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process.

PubMed

Vishwas, M; Narasimha Rao, K; Arjuna Gowda, K V; Chakradhar, R P S

2010-09-15

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. Copyright 2010 Elsevier B.V. All rights reserved.

The effect of humidity on persistent photocurrent in indium oxide thin film

NASA Astrophysics Data System (ADS)

Sen, Prabal; Kar, Durgesh; Kasiviswanathan, S.

2018-05-01

The study of persistent photocurrent (PPC) in dc sputtered indium oxide (IO) thin film has been performed both in vacuum and in humid atmosphere (HA) under different sub-band gap (SBG) illuminations (410-635 nm). PPC follows bi-exponential decay with a fast and a slow time constants, τf and τs respectively, after cessation of the excitations. The high persistency in photocurrent is attributed to the carrier trapping at surface related defect states located in the forbidden gap of IO. The values of τf and τs extracted from the bi-exponential fit are around 10-80 min and 3000-10000 min, respectively, when the film is kept in vacuum. The drastic reduction (nearly one order of magnitude) in the persistence of photocurrent has been found when the film is kept in HA (relative humidity˜90 %). The reduction in persistence of photocurrent in HA is due to the surface passivation by of water molecules.

The effect of annealing on structural and optical properties of α-Fe2O3/CdS/α-Fe2O3 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Saleem, M.; Durrani, S. M. A.; Saheb, N.; Al-Kuhaili, M. F.; Bakhtiari, I. A.

2014-11-01

Multilayered thin film heterostructures of α-Fe2O3/CdS/α-Fe2O3 were prepared through physical vapor deposition. Each α-Fe2O3 layer was deposited by e-beam evaporation of iron in an oxygen atmosphere. The CdS layer was deposited by thermal evaporation in a vacuum. The effect of post annealing of multilayered thin films in air in the temperature range 250 °C to 450 °C was investigated. Structural characterization indicated the growth of the α-Fe2O3 phase with a polycrystalline structure without any CdS crystalline phase. As-deposited multilayer heterostructures were amorphous and transformed into polycrystalline upon annealing. The surface modification of the films during annealing was revealed by scanning electron microscopy. Spectrophotometric measurements were used to determine the optical properties, including the transmittance, absorbance, and band gap. All the films had both direct as well as indirect band gaps.

A study on dependence of the structural, optical and electrical properties of cadmium lead sulphide thin films on Cd/Pb ratio

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nair, Sinitha B., E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Abraham, Anitha, E-mail: sinithanair@gmail.com, E-mail: anithakklm@gmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com

2014-10-15

Cadmium Lead Sulphide thin films with systematic variation in Cd/Pb ratio are prepared at 333K by CBD, adjusting the reagent-molarity, deposition time and pH. XRD exhibits crystalline-amorphous transition as Cd% exceeds Pb%. AFM shows agglomeration of crystallites of size ∼50±5 nm. EDAX assess the composition whereas XPS ascertains the ternary formation, with binding energies of Pb4f{sub 7/2} and 4f{sub 5/2}, Cd3d{sub 5/2} and 3d{sub 3/2} and S2p at 137.03, 141.606, 404.667, 412.133 and 160.218 eV respectively. The optical absorption spectra reveal the variance in the direct allowed band gaps, from 1.57eV to 2.42 eV as Cd/Pb ratio increases from 0.2more » to 2.7, suggesting possibility of band gap engineering in the n-type films.« less

Comparative study of mobility extraction methods in p-type polycrystalline silicon thin film transistors

NASA Astrophysics Data System (ADS)

Liu, Kai; Liu, Yuan; Liu, Yu-Rong; En, Yun-Fei; Li, Bin

2017-07-01

Channel mobility in the p-type polycrystalline silicon thin film transistors (poly-Si TFTs) is extracted using Hoffman method, linear region transconductance method and multi-frequency C-V method. Due to the non-negligible errors when neglecting the dependence of gate-source voltage on the effective mobility, the extracted mobility results are overestimated using linear region transconductance method and Hoffman method, especially in the lower gate-source voltage region. By considering of the distribution of localized states in the band-gap, the frequency independent capacitance due to localized charges in the sub-gap states and due to channel free electron charges in the conduction band were extracted using multi-frequency C-V method. Therefore, channel mobility was extracted accurately based on the charge transport theory. In addition, the effect of electrical field dependent mobility degradation was also considered in the higher gate-source voltage region. In the end, the extracted mobility results in the poly-Si TFTs using these three methods are compared and analyzed.

Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

DOE PAGES

Logan, J. A.; Patel, S. J.; Harrington, S. D.; ...

2016-06-27

The discovery of topological insulators, materials with bulk band gaps and protected cross-gap surface states in compounds such as Bi 2Se 3, has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theoretical calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this would provide a materials platform for entirely new heterostructure spintronic devices that make use of the structurally identical but electronically varied nature of Heusler compounds. Here we show the presence of a TSS in epitaxially grown thin films of the half-Heusler compound PtLuSb. Spin-more » and angle-resolved photoemission spectroscopy, complemented by theoretical calculations, reveals a surface state with linear dispersion and a helical tangential spin texture consistent with previous predictions. As a result, this experimental verification of topological behavior is a significant step forward in establishing half-Heusler compounds as a viable material system for future spintronic devices.« less

Preparation and characterization of a poly (1, 4-phenylenevinylene) derivative-based hybrid thin film nanocomposites with enhanced performance

NASA Astrophysics Data System (ADS)

Belhaj, Marwa; Jemmeli, Dhouha; Dridi, Cherif; Ben Salem, Balkiss; Jaballah, Najmeddine; Majdoub, Mustapha; Yatskiv, Roman; Grym, Jan

2018-05-01

In this study, a poly (1, 4-phenylenevinylene) derivative (PPV-C6) was synthesized via Gilch polycondensation, and its electrochemical and optical characteristics were determined by cyclic voltammetry analysis, ultraviolet-visible, and photoluminescence spectroscopy. The polymer exhibited semiconductor behavior with an optical band gap of about 2.02 eV. Thin-film hybrid nanocomposites were prepared based on PPV-C6 with a large range of concentrations of sol-gel synthesized surfactant-free ZnO nanoparticles (n-ZnO). We investigated the photophysical properties of nanocomposites with different weight ratios of n-ZnO. The optical absorption spectra of PPV-C6: n-ZnO nanocomposites exhibited moderate variation in terms of the optical band gap energy with respect to the pristine polymer. Photoluminescence spectra indicated that the optimum n-ZnO concentration was about 50 wt% to achieve photoluminescence quenching, which corresponded to the most homogeneous surface and efficient charge transfer due to optimal exciton dissociation. We established good correlations between the investigated properties.

Ultrafast frequency-agile terahertz devices using methylammonium lead halide perovskites

PubMed Central

Chanana, Ashish; Liu, Xiaojie; Vardeny, Zeev Valy

2018-01-01

The ability to control the response of metamaterial structures can facilitate the development of new terahertz devices, with applications in spectroscopy and communications. We demonstrate ultrafast frequency-agile terahertz metamaterial devices that enable such a capability, in which multiple perovskites can be patterned in each unit cell with micrometer-scale precision. To accomplish this, we developed a fabrication technique that shields already deposited perovskites from organic solvents, allowing for multiple perovskites to be patterned in close proximity. By doing so, we demonstrate tuning of the terahertz resonant response that is based not only on the optical pump fluence but also on the optical wavelength. Because polycrystalline perovskites have subnanosecond photocarrier recombination lifetimes, switching between resonances can occur on an ultrafast time scale. The use of multiple perovskites allows for new functionalities that are not possible using a single semiconducting material. For example, by patterning one perovskite in the gaps of split-ring resonators and bringing a uniform thin film of a second perovskite in close proximity, we demonstrate tuning of the resonant response using one optical wavelength and suppression of the resonance using a different optical wavelength. This general approach offers new capabilities for creating tunable terahertz devices. PMID:29736416

Ultrafast frequency-agile terahertz devices using methylammonium lead halide perovskites.

PubMed

Chanana, Ashish; Liu, Xiaojie; Zhang, Chuang; Vardeny, Zeev Valy; Nahata, Ajay

2018-05-01

The ability to control the response of metamaterial structures can facilitate the development of new terahertz devices, with applications in spectroscopy and communications. We demonstrate ultrafast frequency-agile terahertz metamaterial devices that enable such a capability, in which multiple perovskites can be patterned in each unit cell with micrometer-scale precision. To accomplish this, we developed a fabrication technique that shields already deposited perovskites from organic solvents, allowing for multiple perovskites to be patterned in close proximity. By doing so, we demonstrate tuning of the terahertz resonant response that is based not only on the optical pump fluence but also on the optical wavelength. Because polycrystalline perovskites have subnanosecond photocarrier recombination lifetimes, switching between resonances can occur on an ultrafast time scale. The use of multiple perovskites allows for new functionalities that are not possible using a single semiconducting material. For example, by patterning one perovskite in the gaps of split-ring resonators and bringing a uniform thin film of a second perovskite in close proximity, we demonstrate tuning of the resonant response using one optical wavelength and suppression of the resonance using a different optical wavelength. This general approach offers new capabilities for creating tunable terahertz devices.

Extraordinary wavelength reduction in terahertz graphene-cladded photonic crystal slabs

PubMed Central

Williamson, Ian A. D.; Mousavi, S. Hossein; Wang, Zheng

2016-01-01

Photonic crystal slabs have been widely used in nanophotonics for light confinement, dispersion engineering, nonlinearity enhancement, and other unusual effects arising from their structural periodicity. Sub-micron device sizes and mode volumes are routine for silicon-based photonic crystal slabs, however spectrally they are limited to operate in the near infrared. Here, we show that two single-layer graphene sheets allow silicon photonic crystal slabs with submicron periodicity to operate in the terahertz regime, with an extreme 100× wavelength reduction from graphene’s large kinetic inductance. The atomically thin graphene further leads to excellent out-of-plane confinement, and consequently photonic-crystal-slab band structures that closely resemble those of ideal two-dimensional photonic crystals, with broad band gaps even when the slab thickness approaches zero. The overall photonic band structure not only scales with the graphene Fermi level, but more importantly scales to lower frequencies with reduced slab thickness. Just like ideal 2D photonic crystals, graphene-cladded photonic crystal slabs confine light along line defects, forming waveguides with the propagation lengths on the order of tens of lattice constants. The proposed structure opens up the possibility to dramatically reduce the size of terahertz photonic systems by orders of magnitude. PMID:27143314

A multi-scale segmentation approach to filling gaps in Landsat ETM+ SLC-off images

USGS Publications Warehouse

Maxwell, S.K.; Schmidt, Gail L.; Storey, James C.

2007-01-01

On 31 May 2003, the Landsat Enhanced Thematic Plus (ETM+) Scan Line Corrector (SLC) failed, causing the scanning pattern to exhibit wedge-shaped scan-to-scan gaps. We developed a method that uses coincident spectral data to fill the image gaps. This method uses a multi-scale segment model, derived from a previous Landsat SLC-on image (image acquired prior to the SLC failure), to guide the spectral interpolation across the gaps in SLC-off images (images acquired after the SLC failure). This paper describes the process used to generate the segment model, provides details of the gap-fill algorithm used in deriving the segment-based gap-fill product, and presents the results of the gap-fill process applied to grassland, cropland, and forest landscapes. Our results indicate this product will be useful for a wide variety of applications, including regional-scale studies, general land cover mapping (e.g. forest, urban, and grass), crop-specific mapping and monitoring, and visual assessments. Applications that need to be cautious when using pixels in the gap areas include any applications that require per-pixel accuracy, such as urban characterization or impervious surface mapping, applications that use texture to characterize landscape features, and applications that require accurate measurements of small or narrow landscape features such as roads, farmsteads, and riparian areas.

Synthesis and characterization of lead sulphide thin films from ethanolamine (ETA) complexing agent chemical bath

NASA Astrophysics Data System (ADS)

Gashaw Hone, Fekadu; Dejene, F. B.

2018-02-01

Polycrystalline lead sulphide (PbS) thin films were grown on glass substrates by chemical bath deposition route using ethanolamine (ETA) as a complexing agent. The effects of ETA molar concentration on the structural, morphological, electrical and optical properties of lead sulphide thin films were thoroughly studied. The XRD analyses revealed that all the deposited thin films were face center cubic crystal structure and their preferred orientations were varied along the (111) and (200) planes. The XRD results further confirmed that ETA concentration had a significant effects on the strain, average crystalline size and dislocation density of the deposited thin films. The SEM studies illustrated the evolution and transformation of surface morphology as ETA molar concentration increased from 0.41 M to 1.64 M. The energy dispersive x-ray analysis was used to verify the compositional elements of the deposited thin films. Optical spectroscopy investigation established that the band gap of the PbS thin films were reduced from 0.98 eV to 0.68 eV as ETA concentration increased. The photoluminescence spectra showed a well defined peak at 428 nm and shoulder around 468 nm for all PbS thin films. The electrical resistivity of the thin films found in the order of 103 Ω cm at room temperature and decreased as the ETA molar concentration was increased.

Elaboration et caracterisation de couches minces de CuInS2 deposees par la pyrolyse par pulverisation ultrasonique a base de transducteur

NASA Astrophysics Data System (ADS)

Petuenju, Eric Nguwuo

The present thesis study is part of the work of The Laboratory of New Materials for Energy and Electrochemistry systems (LaNoMat) that search new techniques to elaborate new materials for photovoltaic solar applications. This aims contribute to the development of the exploitation of solar energy into electrical energy by the maximum of the population throughout the world. This work deals with the determination of CuInS2 thin film deposition parameters by ultrasonic spray pyrolysis method for applications in the technology of three dimensional (3D) solar cells. The structure of the band gap of CuInS2 (a semiconductor material with a direct bandgap of 1.55 eV) makes it an excellent candidate for the role of the absorber in thin film technology for solar photovoltaic applications. 3D solar photovoltaic technology requires the production of a p-n junction with n and p-type semiconductors to make networks. The production and growth of such networks depends on the creation of thin films which have the characteristics of an ultrathin nanocomposite or extremely thin absorber (typically a few tens of nanometers) or which act as a quantum dot. To allow the emergence of 3D photovoltaic technology, it is important to develop methods for the growth of thin layers of materials such as CuInS 2, which are potentially interesting for this purpose. But the development of methods for thin film deposition, for the reasons of competition and accessibility, must be considered as an important factor in the context of the development of three-dimensional photovoltaic solar cells at low cost (production costs: of the order of 0,5 a 0,3$US/Watt-peak) (Beard et al., 2014). To do this it is necessary to use materials manufacturing technology readily available and inexpensive, and allowing to have materials on large surface, such as pyrolysis which allows to reduce costs by a factor of 100 compared to the crystallogenesis. Pyrolysis is defined as a process for decomposing one or more compounds by heat to obtain the formation of a new compound. The main objective of this thesis focuses on the use of ultrasonic spray pyrolysis technique to grow CuInS2 thin films and characterize them by different techniques. This choice is linked to the fact that the CuInS2 is a direct gap semiconductor material, which can act as absorber in solar photovoltaic technology. However, the growth of thin films of this material is subject to a problem of creation of interpenetrating networks of different types of semiconductors (n and p-type), which implies a suitable choice of deposition technique. It should be noted that the interest in existing methods, the ALCVD (Atomic Layer Vapor Deposition) and ILGAR (Ion Layer Gas Reaction) developed in paragraphs 2.4.1 and 2.4.2, is confronted with time limits of these methods. Indeed these two methods, owing to the principle of sequential production process, take place very slowly; and we showed that the thickness of the obtained thin film is proportional to the deposition time. In this work, spray pyrolysis is carried out in two different ways, namely ultrasonic and pneumatic spraying. Of these two methods, we showed that the transducer based ultrasonic spray pyrolysis is the method that can be used to grow thin films of CuInS2 a good homogeneity of the crystallites size (of the order of 110 A) and the morphology of the layers. Ultrasonic spraying was done with a piezoelectric system using a transducer. This system consists of a cylindrical container made of Teflon 5 cm diameter and 15 cm long in which is introduced the solution containing the precursor. The container is mounted on an ultrasonic transducer, component of the piezoelectric system TDK nebulizer unit NB-80E-01, which transforms the solution in aerosol. The aerosol is transported through a teflon tube by a carrier gas, the nitrogen, into a floating motion to the substrate. The substrate is placed on a heating plate whose temperature is controlled by a control monitor. The supply in solution of the container is done with the aid of an electric pump. The nature of the samples obtained is dependent of the supporting electrolyte for the deposition of the precursors. We showed that the use of precursors in an aqueous solution leads to the production of thin layers of indium sulfide In 2S3 clusters while the use of the precursors in alcoholic solution leads to the production of thin layers of CuInS2. The precursors ratio for deposition of CuInS2 is Cu: In: S = 1: 1: 4. The thickness of thin films of In2S3 is of the order of 812 nm. These layers are composed of microaggregates with size ranging from 3 to 20 microns. The particle size in the thin films of In2S 3 is of about 220 A. The thickness of the thin film of CuInS 2 is of the order of 600 nm. Spectrophotometry has identified that all obtained CuInS2 thin films have an average band gap value of 1.40 eV. This indicates the presence of intermediate states, such as copper vacancies in the material band gap. The absorption spectra also allowed us to distinguish peaks that can be attributed to the contribution of sub-bands corresponding to the indium-sulfur bond and the sulfur 3s-band. The samples were characterized by X-ray Diffraction to identify crystalline structure while their surface morphology as well as their semi-quantitative chemical composition were determined using the energy-dispersive x-ray spectroscopy. The ensuing results show that the thin films obtained are homogeneous, transparent and polycrystalline with the crystallites size of the order of 110 A. The thin films obtained by this method do not require annealing to improve their crystallinity. The growth of thin films depends on the substrate humidification period. For a wetting time of about 3 minutes, thin layers are obtained with stoichiometry of Cu: In: S = 1: 1.81: 3.18. The obtained samples are indexed as CIS1. For a wetting time of about 7 minutes, thin layers are obtained with stoichiometry of Cu: In: S = 1: 1.23: 2.07. The obtained samples are indexed as CIS2. Contrary to layers CIS1, the layers CIS2 also contain chlorine. The obtained thin films are p-type and, under illumination of 100 mW/cm 2 by a xenon lamp, an increase of the density of charge carriers of about 62% is obtained, but this value does not account the recombination phenomena. In the case of the pneumatic spraying method, the spraying principle is based on the application of Venturi effect, which allows to spray the solution of precursors using a carrier gas. This method is called gas blasting spray pyrolysis. The gas used here is nitrogen. The sprayer is an airbrush - Iwata hp-eclipse bcs - which aspires the solution through a tube connected to the bottle containing the precursor solution, and sprays it through a nozzle according to the principle of the Venturi effect. The precursors ratio is Cu:In:S=1:1:4. The obtained thin films are CuInS2. They are heterogeneous, dense, opaque, and polycrystalline with a crystallites size of the order of 550 A. The stoichiometry of the obtained layers is of order of 1:1.45:2.28. The thin films obtained by this method require annealing (heating of the samples in an oven for one hour at a temperature of 300 ° C) to improve their crystallinity. The thickness of the obtained thin film of CuInS2 is of the order of 1190 nm. The comparative analysis of the samples obtained by the two types of spray pyrolysis is then performed. It shows that ultrasonic aerosol spray would provide CuInS2 thin films for solar applications both in the roles of nanocomposite ultra-thin absorber and extremely thin absorber as in that of quantum dot absorber. In conclusion, transducer based ultrasonic spray pyrolysis is therefore a method that would allow the deposition of CuInS2 on TiO 2 and contribute to resolve a major limitation in three-dimensional photovoltaic solar cells technology, namely the realization of interpenetrating networks of n-type and p-type semiconductors, on a large scale and without time constraint.

Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications

DOE PAGES

Qiao, L.; Zhang, S.; Xiao, H. Y.; ...

2018-01-01

Bismuth ferrite BiFeO 3 (BFO) is an important ferroelectric material for thin-film optoelectronic sensing and potential photovoltaic applications. Its relatively large band gap, however, limits the conversion efficiency of BFO absorber-based PV devices. In this study, based on density functional theory calculations we demonstrate that with well-designed Fe-site elemental substitution, tetragonal BFO can exhibit a much lower fundamental band gap than conventional rhombohedral BFO without forming in-gap electronic states and unravel the underlying mechanisms. Cation atomic size, electronegativity, and crystallographic symmetry are evidenced as critical parameters to tailor the metal 3d – oxygen 2p orbital interactions and thus intrinsically modifymore » electronic structure, particularly, the shape and character of the valence and conduction band edges. With reduced band gap, improved mobility, and uncompromised ferroelectric and magnetic ground states, the present results provide a new strategy of designing high symmetry BFO for efficient optoelectronic applications.« less

Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiao, L.; Zhang, S.; Xiao, H. Y.

Bismuth ferrite BiFeO 3 (BFO) is an important ferroelectric material for thin-film optoelectronic sensing and potential photovoltaic applications. Its relatively large band gap, however, limits the conversion efficiency of BFO absorber-based PV devices. In this study, based on density functional theory calculations we demonstrate that with well-designed Fe-site elemental substitution, tetragonal BFO can exhibit a much lower fundamental band gap than conventional rhombohedral BFO without forming in-gap electronic states and unravel the underlying mechanisms. Cation atomic size, electronegativity, and crystallographic symmetry are evidenced as critical parameters to tailor the metal 3d – oxygen 2p orbital interactions and thus intrinsically modifymore » electronic structure, particularly, the shape and character of the valence and conduction band edges. With reduced band gap, improved mobility, and uncompromised ferroelectric and magnetic ground states, the present results provide a new strategy of designing high symmetry BFO for efficient optoelectronic applications.« less

Band gap engineering of N-alloyed Ga{sub 2}O{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Dongyu; Li, Bingsheng, E-mail: libingsheng@hit.edu.cn, E-mail: ashen@ccny.cuny.edu; Sui, Yu

2016-06-15

The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH{sub 3} and Ar gas for 60 minutes. Then they were annealed in NH{sub 3} ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinicmore » and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.« less

Experimental evidence of locally resonant sonic band gap in two-dimensional phononic stubbed plates

NASA Astrophysics Data System (ADS)

Oudich, Mourad; Senesi, Matteo; Assouar, M. Badreddine; Ruzenne, Massimo; Sun, Jia-Hong; Vincent, Brice; Hou, Zhilin; Wu, Tsung-Tsong

2011-10-01

We provide experimental evidence of the existence of a locally resonant sonic band gap in a two-dimensional stubbed plate. Structures consisting of a periodic arrangement of silicone rubber stubs deposited on a thin aluminium plate were fabricated and characterized. Brillouin spectroscopy analysis is carried out to determine the elastic constants of the used rubber. The constants are then implemented in an efficient finite-element model that predicts the band structure and transmission to identify the theoretical band gap. We measure a complete sonic band gap for the out-of-plane Lamb wave modes propagating in various samples fabricated with different stub heights. Frequency domain measurements of full wave field and transmission are performed through a scanning laser Doppler vibrometer. A complete band gap from 1.9 to 2.6 kHz is showed using a sample with 6-mm stub diameter, 5-mm thickness, and 1-cm structure periodicity. Very good agreement between numerical and experimental results is obtained.

Tidal stresses and energy gaps in microstate geometries

NASA Astrophysics Data System (ADS)

Tyukov, Alexander; Walker, Robert; Warner, Nicholas P.

2018-02-01

We compute energy gaps and study infalling massive geodesic probes in the new families of scaling, microstate geometries that have been constructed recently and for which the holographic duals are known. We find that in the deepest geometries, which have the lowest energy gaps, the geodesic deviation shows that the stress reaches the Planck scale long before the probe reaches the cap of the geometry. Such probes must therefore undergo a stringy transition as they fall into microstate geometry. We discuss the scales associated with this transition and comment on the implications for scrambling in microstate geometries.

Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yücel, E., E-mail: dr.ersinyucel@gmail.com; Kahraman, S.; Güder, H.S.

2015-08-15

Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects ofmore » different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.« less