Photoelectric properties of defect chalcogenide HgGa{sub 2}X{sub 4} (x=S, Se, Te)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Ramesh; Dwivedi, Shalini; Sharma, Yamini, E-mail: sharma.yamini62@gmail.com

2016-05-06

We present results of ab initio study of ordered vacancy compounds of mercury. The electronic structure, charge density, optical and transport properties of the semiconductor family HgGa{sub 2}X{sub 4} (X=S, Se, Te) are calculated using the full potential linearized augmented plane wave method which is based on the density functional theory. A direct bandgap is observed in these compounds, which reduces in the order S>Se>Te. From the density of states it is observed that there is strong hybridization of Hg-d, Ga-d and X-p states. The optical properties show a red shift with increasing size and atomic no. of the chalcogenidemore » atoms. We have also reported the transport properties of mercury thiogallates for the first time. The selenide compound exhibits n-type nature whereas HgGa{sub 2}S{sub 4} and HgGa{sub 2}Te{sub 4} show p-type behavior. The power factor and ZT for the HGS increases at low temperatures, the figure of merit is highest for HgGa{sub 2}Se{sub 4} (1.17) at 19 K.« less

Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb)2(Te,Se)3

NASA Astrophysics Data System (ADS)

Jeffries, Jason; Butch, N. P.; Vohra, Y. K.; Weir, S. T.

2014-03-01

The group V-VI compounds--like Bi2Se3, Sb2Te3, or Bi2Te3--have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and compare that behavior with other binary V-VI compounds under pressure. Lawrence Livermore National Laboratory is operated by Lawrence Livermore National Security, LLC, for the U.S. Department of Energy, National Nuclear Security Administration under Contract DE-AC52-07NA27344.

GW quasiparticle energy study of ternary tetradymite Bi{sub 2}Te{sub 2}Se and Bi{sub 2}Te{sub 2}S thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuaibu, Alhassan; Department of Physics, Faculty of Science, Nigerian Defence Academy, P.M., 2109. Kaduna Nigeria; Rahman, Md. Mahmudur

In this work, we have evaluated the quasiparticle energies of ternary tetradymite Bi{sub 2}Te{sub 2}Se and Bi{sub 2}Te{sub 2}S using first-principles calculation within the G{sub 0}W{sub 0} methods. We have also performed a broad convergence tests in order to investigate the quasiparticle corrections to the structural parameters and to the semi core d electrons in both of the compounds. For each case, we have calculated the many-body corrections within a one-shot GW method of the compounds. Our results have shown that for Bi{sub 2}Te{sub 2}Se the GW corrections increase the band gap to almost 10%, and for specific atomic positions,more » the band structure shows a close value to the experimental one. For Bi{sub 2}Te{sub 2}S, despite increase in the band gap due to the GW corrections, possibility of bulk resistivity that can be significant for photovoltaic applications was observed.« less

Transport Properties of ZnSe- ITO Hetero Junction

NASA Astrophysics Data System (ADS)

Ichibakase, Tsuyoshi

In this report, ITO(Indium Tin Oxide) was used on the glass substrates as the transparent electrode, and ZnSe layer was prepared by the vacuum deposition on this ITO. Then, the electrical characteristics of this sample were investigated by mans of the electric current transport analysis. The sample that ZnSe was prepared as 3.4 μm in case of ITO-ZnSe sample, has high density level at the junction surface. The ITO-ZnSe junction has two type of diffusion current. However, the ITO-ZnSe sample that ZnSe layer was prepared as 0.1 μm can be assumed as the ohmic contact, and ITO-ZnSe(0.1μm) -CdTe sample shows the avalanche breakdown, and it is considered that the avalanche breakdown occurs in CdTe layer. It is difficult to occur the avalanche breakdown, if ZnSe-CdTe junction has high-density level and CdTe layer has high-density defect. Hence, the ZnSe-CdTe sample that CdTe layer was prepared on ITO-ZnSe(0.1μm) substrate has not high-density level at the junction surface, and the CdTe layer with little lattice imperfection can be prepared. It found that ITO-ZnSe(0.1μm) substrate is available for the II-VI compounds semiconductor device through above analysis result.

Theory versus experiment for a family of single-layer compounds with a similar atomic arrangement: (Tl,X )/Si(111 )√{3 }×√{3 }(X =Pb,Sn,Bi,Sb,Te,Se)

NASA Astrophysics Data System (ADS)

Matetskiy, A. V.; Kibirev, I. A.; Mihalyuk, A. N.; Eremeev, S. V.; Gruznev, D. V.; Bondarenko, L. V.; Tupchaya, A. Y.; Zotov, A. V.; Saranin, A. A.

2017-08-01

Two-dimensional compounds made of one monolayer of Tl and one-third monolayer of Pb, Bi, Te, or Se (but not of Sn or Sb) on Si(111) have been found to have a similar atomic arrangement which can be visualized as a √{3 }×√{3 } -periodic honeycomb network of chained Tl trimers with atoms of the second adsorbate occupying the centers of the honeycomb units. Structural and electronic properties of the compounds have been examined in detail theoretically using density functional theory (DFT) calculations and experimentally using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), and angle-resolved photoelectron spectroscopy (ARPES) observations. It has been found that though structural parameters of the compounds are very similar for all species, the only common feature of their band structure is a considerable spin-splitting of the surface-state bands, while other basic electronic properties vary greatly with a change of species. The Tl-Pb compound is strongly metallic with two metallic surface-state bands; the Tl-Bi compound is also metallic but with a single metallic band; the Tl-Te and Tl-Se compounds appear to be insulators.

Negative-pressure polymorphs made by heterostructural alloying

PubMed Central

Perkins, John D.

2018-01-01

The ability of a material to adopt multiple structures, known as polymorphism, is a fascinating natural phenomenon. Various polymorphs with unusual properties are routinely synthesized by compression under positive pressure. However, changing a material’s structure by applying tension under negative pressure is much more difficult. We show how negative-pressure polymorphs can be synthesized by mixing materials with different crystal structures—a general approach that should be applicable to many materials. Theoretical calculations suggest that it costs less energy to mix low-density structures than high-density structures, due to less competition for space between the atoms. Proof-of-concept experiments confirm that mixing two different high-density forms of MnSe and MnTe stabilizes a Mn(Se,Te) alloy with a low-density wurtzite structure. This Mn(Se,Te) negative-pressure polymorph has 2× to 4× lower electron effective mass compared to MnSe and MnTe parent compounds and has a piezoelectric response that none of the parent compounds have. This example shows how heterostructural alloying can lead to negative-pressure polymorphs with useful properties—materials that are otherwise nearly impossible to make. PMID:29725620

Negative-pressure polymorphs made by heterostructural alloying.

PubMed

Siol, Sebastian; Holder, Aaron; Steffes, James; Schelhas, Laura T; Stone, Kevin H; Garten, Lauren; Perkins, John D; Parilla, Philip A; Toney, Michael F; Huey, Bryan D; Tumas, William; Lany, Stephan; Zakutayev, Andriy

2018-04-01

The ability of a material to adopt multiple structures, known as polymorphism, is a fascinating natural phenomenon. Various polymorphs with unusual properties are routinely synthesized by compression under positive pressure. However, changing a material's structure by applying tension under negative pressure is much more difficult. We show how negative-pressure polymorphs can be synthesized by mixing materials with different crystal structures-a general approach that should be applicable to many materials. Theoretical calculations suggest that it costs less energy to mix low-density structures than high-density structures, due to less competition for space between the atoms. Proof-of-concept experiments confirm that mixing two different high-density forms of MnSe and MnTe stabilizes a Mn(Se,Te) alloy with a low-density wurtzite structure. This Mn(Se,Te) negative-pressure polymorph has 2× to 4× lower electron effective mass compared to MnSe and MnTe parent compounds and has a piezoelectric response that none of the parent compounds have. This example shows how heterostructural alloying can lead to negative-pressure polymorphs with useful properties-materials that are otherwise nearly impossible to make.

Trivalent uranium phenylchalcogenide complexes: exploring the bonding and reactivity with CS2 in the Tp*2UEPh series (E = O, S, Se, Te).

PubMed

Matson, Ellen M; Breshears, Andrew T; Kiernicki, John J; Newell, Brian S; Fanwick, Phillip E; Shores, Matthew P; Walensky, Justin R; Bart, Suzanne C

2014-12-15

The trivalent uranium phenylchalcogenide series, Tp*2UEPh (Tp* = hydrotris(3,5-dimethylpyrazolyl)borate, E = O (1), S (2), Se (3), Te (4)), has been synthesized to investigate the nature of the U-E bond. All compounds have been characterized by (1)H NMR, infrared and electronic absorption spectroscopies, and in the case of 4, X-ray crystallography. Compound 4 was also studied by SQUID magnetometry. Computational studies establish Mulliken spin densities for the uranium centers ranging from 3.005 to 3.027 (B3LYP), consistent for uranium-chalcogenide bonds that are primarily ionic in nature, with a small covalent contribution. The reactivity of 2-4 toward carbon disulfide was also investigated and showed reversible CS2 insertion into the U(III)-E bond, forming Tp*2U(κ(2)-S2CEPh) (E = S (5), Se (6), Te (7)). Compound 5 was characterized crystallographically.

Anisotropy of the (π, π) dynamic susceptibility in magnetically ordered (x=0.05) and superconducting (x = 0.40) Fe1.02Te1-xSex

NASA Astrophysics Data System (ADS)

Prokeš, K.; Hiess, A.; Bao, W.; Wheeler, E.; Landsgesell, S.; Argyriou, D. N.

2012-08-01

Polarized inelastic neutron scattering on magnetically ordered Fe1.02Te0.95Se0.05 and superconducting Fe1.02Te0.60Se0.40 has been used to elucidate the anisotropy of the magnetic dynamical susceptibility at or near the (π, π) momentum space position. By investigating Fe1.02Te0.60Se0.40 in its superconducting state at 2 K, where a spin resonance at about 6 meV has been reported, we show that the susceptibility in the direction perpendicular to the c axis is by about 35% larger than for the direction along the c axis suggesting dominant singlet pairing of s± type. At higher temperatures the same type of anisotropy is present in the spin dynamics of the normal state. On the other hand, for the Fe1.02Te0.95Se0.05 sample we find an almost isotropic response in the paramagnetic state. When the compound is magnetically ordered at (π, 0), the response near (π, π) persists, but with reduced intensity. The c-axis component is only slightly reduced whereas the in-plane component appears to be strongly reduced, leading to reverted anisotropy with respect to the superconducting compound.

Low-Temperature Synthesis of New Ternary Chalcogenide Compounds of Copper, Gold, and Mercury Using Alkali Metal Polychalcogenide Fluxes

NASA Astrophysics Data System (ADS)

Park, Younbong

In last two decades great efforts have been exerted to find new materials with interesting optical, electrical, and catalytic properties. Metal chalcogenides have been studied extensively because of their interesting physical properties and rich structural chemistry, among the potential materials. Prior to this work, most known metal chalcogenides had been synthesized at high temperature (T > 500^circC). Intermediate temperature synthesis in solid state chemistry was seldom pursued because of the extremely slow diffusion rates between reactants. This intermediate temperature regime could be a new synthesis condition if one looks for new materials with unusual structural features and properties. Metastable or kinetically stable compounds can be stabilized in this intermediate temperature regime, in contrast to the thermodynamically stable high temperature compounds. Molten salts, especially alkali metal polychalcogenide fluxes, can provide a route for exploring new chalcogenide materials at intermediate temperatures. These fluxes are very reactive and melt as low as 145^circC (mp of K_2S_4). Using these fluxes as reaction media, we have encountered many novel chalcogenide compounds with unusual structures and interesting electrical properties (semiconductors to metallic conductors). Low-dimensional polychalcogenide compounds of alpha-ACuQ_4 (A = K, Cs; Q = S, Se), beta -KCuS_4, KAuQ_5 (Q = S, Se), K_3AuSe_ {13}, Na_3AuSe _8, and CsAuSe_3 exhibit the beautiful structural diversity and bonding flexibility of the polychalcogenide ligands. In addition, many novel chalcogenide compounds of Cu, Hg, and Au with low-dimensional structures. The preparation of novel mixed -valence Cu compounds, K_2Cu _5Te_5, Cs _3Cu_8Te_ {10}, Na_3Cu _4Se_4, K _3Cu_8S_4 Te_2, and KCu_4 S_2Te, which show interesting metallic properties, especially underscores the enormous potential of the molten salt method for the synthesis of new chalcogenide materials with interesting physical properties. The materials prepared in this study can be classified as a new class of chalcogenide compounds due to their unique structures. In this dissertation the synthesis, characterization with emphasis on structures, charge transport properties, and magnetic susceptibilities of the materials will be illustrated.

Impact of the charge density wave state in the electrodynamic response of ZrTe 3 - x Se x : Optical evidence for a pseudogap phase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chinotti, M.; Ethiraj, J.; Mirri, C.

The emergence of superconductivity upon progressively suppressing the long-range, charge-density-wave (CDW) order characterizes the phase diagram of several materials of interest in the on-going solid-state physics research. Se-doped ZrTe 3 compounds provide the most recent, suitable arena in order to investigate the interplay of otherwise competing orders in layeredlike two-dimensional systems. We present an optical study of the CDW state in ZrTe 3-xSe x at selected Se dopings, based on the measurement of the reflectivity from the far-infrared up to the ultraviolet, as a function of temperature. We particularly focus our attention to the redistribution of the spectral weight, whichmore » images the impact of the CDW state within the optical conductivity across the phase diagram of the title compounds. The electrodynamic response is consistent with a scenario based on a long-range CDW condensate at low Se doping. Upon increasing the Se content, this then gives way to local, short-range order CDW segments. Thus, our spectral weight analysis reveals the presence of a pseudogap phase, as fingerprint of the CDW precursor effects and thus shaping the charge dynamics of the title compounds in their normal state, preceding the onset of superconductivity.« less

Impact of the charge density wave state in the electrodynamic response of ZrTe 3 - x Se x : Optical evidence for a pseudogap phase

DOE PAGES

Chinotti, M.; Ethiraj, J.; Mirri, C.; ...

2018-01-12

The emergence of superconductivity upon progressively suppressing the long-range, charge-density-wave (CDW) order characterizes the phase diagram of several materials of interest in the on-going solid-state physics research. Se-doped ZrTe 3 compounds provide the most recent, suitable arena in order to investigate the interplay of otherwise competing orders in layeredlike two-dimensional systems. We present an optical study of the CDW state in ZrTe 3-xSe x at selected Se dopings, based on the measurement of the reflectivity from the far-infrared up to the ultraviolet, as a function of temperature. We particularly focus our attention to the redistribution of the spectral weight, whichmore » images the impact of the CDW state within the optical conductivity across the phase diagram of the title compounds. The electrodynamic response is consistent with a scenario based on a long-range CDW condensate at low Se doping. Upon increasing the Se content, this then gives way to local, short-range order CDW segments. Thus, our spectral weight analysis reveals the presence of a pseudogap phase, as fingerprint of the CDW precursor effects and thus shaping the charge dynamics of the title compounds in their normal state, preceding the onset of superconductivity.« less

Structural and optical properties of electron-beam-evaporated ZnSe 1- x Te x Ternary compounds with various Te contents

NASA Astrophysics Data System (ADS)

Suthagar, J.; Suthan Kissinger, N. J.; Sharli Nath, G. M.; Perumal, K.

2014-01-01

ZnSe1- x Te x films with different tellurium (Te) contents were deposited by using an electron beam (EB) evaporation technique onto glass substrates for applications to optoelectronic devices. The structural and the optical properties of the ZnSe1- x Te x films were studied in the present work. The host material ZnSe1- x Te x , were prepared by using the physical vapor deposition method of the electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10-5 mbar. The X-ray diffractogram indicated that these alloy films had cubic structure with a strong preferential orientation of the crystallites along the (1 1 1) direction. The optical properties showed that the band gap (E g ) values varied from 2.73 to 2.41 eV as the tellurium content varied from 0.2 to 0.8. Thus the material properties can be altered and excellently controlled by controlling the system composition x.

Negative-pressure polymorphs made by heterostructural alloying

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siol, Sebastian; Holder, Aaron; Steffes, James

The ability of a material to adopt multiple structures, known as polymorphism, is a fascinating natural phenomenon. Various polymorphs with unusual properties are routinely synthesized by compression under positive pressure. However, changing a material's structure by applying tension under negative pressure is much more difficult. We show how negative-pressure polymorphs can be synthesized by mixing materials with different crystal structures - a general approach that should be applicable to many materials. Theoretical calculations suggest that it costs less energy to mix low-density structures than high-density structures, due to less competition for space between the atoms. Proof-of-concept experiments confirm that mixingmore » two different high-density forms of MnSe and MnTe stabilizes a Mn(Se,Te) alloy with a low-density wurtzite structure. This Mn(Se,Te) negative-pressure polymorph has 2x to 4x lower electron effective mass compared to MnSe and MnTe parent compounds and has a piezoelectric response that none of the parent compounds have. Lastly, this example shows how heterostructural alloying can lead to negative-pressure polymorphs with useful properties - materials that are otherwise nearly impossible to make.« less

Negative-pressure polymorphs made by heterostructural alloying

DOE PAGES

Siol, Sebastian; Holder, Aaron; Steffes, James; ...

2018-04-20

The ability of a material to adopt multiple structures, known as polymorphism, is a fascinating natural phenomenon. Various polymorphs with unusual properties are routinely synthesized by compression under positive pressure. However, changing a material's structure by applying tension under negative pressure is much more difficult. We show how negative-pressure polymorphs can be synthesized by mixing materials with different crystal structures - a general approach that should be applicable to many materials. Theoretical calculations suggest that it costs less energy to mix low-density structures than high-density structures, due to less competition for space between the atoms. Proof-of-concept experiments confirm that mixingmore » two different high-density forms of MnSe and MnTe stabilizes a Mn(Se,Te) alloy with a low-density wurtzite structure. This Mn(Se,Te) negative-pressure polymorph has 2x to 4x lower electron effective mass compared to MnSe and MnTe parent compounds and has a piezoelectric response that none of the parent compounds have. Lastly, this example shows how heterostructural alloying can lead to negative-pressure polymorphs with useful properties - materials that are otherwise nearly impossible to make.« less

Thermoelectric properties and chemical potential tuning by Cu-doping in n-type ionic conductors CuxAg2-xSe0.5Te0.5

NASA Astrophysics Data System (ADS)

Lee, Min Ho; Yun, Jae Hyun; Ahn, Kyunghan; Rhyee, Jong-Soo

2017-12-01

Copper and silver chalcogenides with superionic conduction behavior have shown impressively high ZT values, but there has been no intensive effort to optimize their carrier density to further improve their ZT values. Here, we prepared polycrystalline CuxAg2-xSe0.5Te0.5 (x = 0.01, 0.05, 0.1) samples using high temperature melting followed by hot-press sintering, and characterized their thermoelectric properties. We demonstrated that Cu substitution for Ag was achieved with <10% Cu content for CuxAg2-xSe0.5Te0.5 and the Cu doping was quite effective and significantly enhanced the compound's n-type carrier density, which was one order of magnitude higher than the pristine Ag2Se0.5Te0.5 (4.10 × 1018 cm-3). Impressively, the enhancement in electrical conductivity with increasing Cu content was greater than the decrease in absolute value of the Seebeck coefficient in the superionic conduction state. This led to relatively high power factors for Cu0.1Ag1.99Se0.5Te0.5, ranging between 1.10 and 1.30 mW m-1 K-2 over the broad temperature range of 400-560 K, and resulted in the highest ZT of 0.85 at 560 K. Furthermore, ZT values approached >0.7 over a wide temperature range of 460-560 K for x > 0.05. We suggest that the unusual Cu doping effect in Ag2Se0.5Te0.5 can be attributed to the creation of Cu ion conduction in addition to Ag ion conduction, and the optimization of the compound's n-type carrier density.

Structural phase transitions of (Bi 1$-$xSb x ) 2(Te 1$-$y Se y) 3 compounds under high pressure and the influence of the atomic radius on the compression processes of tetradymites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Jinggeng; Yu, Zhenhai; Hu, Qingyang

Recently, A 2B 3-type tetradymites have developed into a hot topic in physical and material research fields, where the A and B atoms represent V and VI group elements, respectively. In this study, in situ angle-dispersive X-ray diffraction measurements were performed on Bi 2Te 2Se, BiSbTeSe 2, and Sb 2Te 2Se tetradymites under high pressure. Bi 2Te 2Se transforms from a layered rhombohedral structure (phase I) into 7-fold monoclinic (phase II) and body-centered tetragonal (phase IV) structures at about 8.0 and 14.3 GPa, respectively, without an 8-fold monoclinic structure (phase III) similar to that in Bi 2Te 3. Thus, themore » compression behavior of Bi 2Te 2Se is the same as that of Bi 2Se 3, which could also be obtained from first-principles calculations and in situ high-pressure electrical resistance measurements. Under high pressure, BiSbTeSe 2 and Sb 2Te 2Se undergo similar structural phase transitions to Bi 2Te 2Se, which indicates that the compression process of tellurides can be modulated by doping Se in Te sites. According to these high-pressure investigations of A 2B 3-type tetradymites, the decrease of the B-site atomic radius shrinks the stable pressure range of phase III and expands that of phase II, whereas the decrease of the A-site atomic radius induces a different effect, i.e. expanding the stable pressure range of phase III and shrinking that of phase II. Lastly, the influence of the atomic radius on the compression process of tetradymites is closely related to the chemical composition and the atom arrangement in the quintuple layer.« less

Structural phase transitions of (Bi 1$-$xSb x ) 2(Te 1$-$y Se y) 3 compounds under high pressure and the influence of the atomic radius on the compression processes of tetradymites

DOE PAGES

Zhao, Jinggeng; Yu, Zhenhai; Hu, Qingyang; ...

2016-12-14

Recently, A 2B 3-type tetradymites have developed into a hot topic in physical and material research fields, where the A and B atoms represent V and VI group elements, respectively. In this study, in situ angle-dispersive X-ray diffraction measurements were performed on Bi 2Te 2Se, BiSbTeSe 2, and Sb 2Te 2Se tetradymites under high pressure. Bi 2Te 2Se transforms from a layered rhombohedral structure (phase I) into 7-fold monoclinic (phase II) and body-centered tetragonal (phase IV) structures at about 8.0 and 14.3 GPa, respectively, without an 8-fold monoclinic structure (phase III) similar to that in Bi 2Te 3. Thus, themore » compression behavior of Bi 2Te 2Se is the same as that of Bi 2Se 3, which could also be obtained from first-principles calculations and in situ high-pressure electrical resistance measurements. Under high pressure, BiSbTeSe 2 and Sb 2Te 2Se undergo similar structural phase transitions to Bi 2Te 2Se, which indicates that the compression process of tellurides can be modulated by doping Se in Te sites. According to these high-pressure investigations of A 2B 3-type tetradymites, the decrease of the B-site atomic radius shrinks the stable pressure range of phase III and expands that of phase II, whereas the decrease of the A-site atomic radius induces a different effect, i.e. expanding the stable pressure range of phase III and shrinking that of phase II. Lastly, the influence of the atomic radius on the compression process of tetradymites is closely related to the chemical composition and the atom arrangement in the quintuple layer.« less

Synthesis of CdSe/ZnS and CdTe/ZnS Quantum Dots: Refined Digestive Ripening

DOE PAGES

Cingarapu, Sreeram; Yang, Zhiqiang; Sorensen, Christopher M.; ...

2012-01-01

We report synthesis of CdSe and CdTe quantum dots (QDs) from the bulk CdSe and CdTe material by evaporation/co-condensation using the solvated metal atom dispersion (SMAD) technique and refined digestive ripening. The outcomes of this new process are (1) the reduction of digestive ripening time by employing ligands (trioctylphosphine oxide (TOPO) and oleylamine (OA)) as capping agent as well as digestive ripening solvent, (2) ability to tune the photoluminescence (PL) from 410 nm to 670 nm, (3) demonstrate the ability of SMAD synthesis technique for other semiconductors (CdTe), (4) direct comparison of CdSe QDs growth with CdTe QDs growth based on digestivemore » ripening times, and (5) enhanced PL quantum yield (QY) of CdSe QDs and CdTe QDs upon covering with a ZnS shell. Further, the merit of this synthesis is the use of bulk CdSe and CdTe as the starting materials, which avoids usage of toxic organometallic compounds, eliminates the hot injection procedure, and size selective precipitation processes. It also allows the possibility of scale up. These QDs were characterized by UV-vis, photoluminescence (PL), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and powder XRD.« less

Nano-scaled top-down of bismuth chalcogenides based on electrochemical lithium intercalation

NASA Astrophysics Data System (ADS)

Chen, Jikun; Zhu, Yingjie; Chen, Nuofu; Liu, Xinling; Sun, Zhengliang; Huang, Zhenghong; Kang, Feiyu; Gao, Qiuming; Jiang, Jun; Chen, Lidong

2011-12-01

A two-step method has been used to fabricate nano-particles of layer-structured bismuth chalcogenide compounds, including Bi2Te3, Bi2Se3, and Bi2Se0.3Te2.7, through a nano-scaled top-down route. In the first step, lithium (Li) atoms are intercalated between the van der Waals bonded quintuple layers of bismuth chalcogenide compounds by controllable electrochemical process inside self-designed lithium ion batteries. And in the second step, the Li intercalated bismuth chalcogenides are subsequently exposed to ethanol, in which process the intercalated Li atoms would explode like atom-scaled bombs to exfoliate original microscaled powder into nano-scaled particles with size around 10 nm. The influence of lithium intercalation speed and amount to three types of bismuth chalcogenide compounds are compared and the optimized intercalation conditions are explored. As to maintain the phase purity of the final nano-particle product, the intercalation lithium amount should be well controlled in Se contained bismuth chalcogenide compounds. Besides, compared with binary bismuth chalcogenide compound, lower lithium intercalation speed should be applied in ternary bismuth chalcogenide compound.

Magnetic excitations in iron chalcogenide superconductors.

PubMed

Kotegawa, Hisashi; Fujita, Masaki

2012-10-01

Nuclear magnetic resonance and neutron scattering experiments in iron chalcogenide superconductors are reviewed to make a survey of the magnetic excitations in FeSe, FeSe 1- x Te x and alkali-metal-doped A x Fe 2- y Se 2 ( A = K, Rb, Cs, etc). In FeSe, the intimate relationship between the spin fluctuations and superconductivity can be seen universally for the variations in the off-stoichiometry, the Co-substitution and applied pressure. The isovalent compound FeTe has a magnetic ordering with different wave vector from that of other Fe-based magnetic materials. The transition temperature T c of FeSe increases with Te substitution in FeSe 1- x Te x with small x , and decreases in the vicinity of the end member FeTe. The spin fluctuations are drastically modified by the Te substitution. In the vicinity of the end member FeTe, the low-energy part of the spin fluctuation is dominated by the wave vector of the ordered phase of FeTe; however, the reduction of T c shows that it does not support superconductivity. The presence of same wave vector as that of other Fe-based superconductors in FeSe 1- x Te x and the observation of the resonance mode demonstrate that FeSe 1- x Te x belongs to the same group as most of other Fe-based superconductors in the entire range of x , where superconductivity is mediated by the spin fluctuations whose wave vector is the same as the nesting vector between the hole pockets and the electron pockets. On the other hand, the spin fluctuations differ for alkali-metal-doped A x Fe 2- y Se 2 and FeSe or other Fe-based superconductors in their wave vector and strength in the low-energy part, most likely because of the different Fermi surfaces. The resonance mode with different wave vector suggests that A x Fe 2- y Se 2 has an exceptional superconducting symmetry among Fe-based superconductors.

Impact of the charge density wave state in the electrodynamic response of ZrTe3 -xSex : Optical evidence for a pseudogap phase

NASA Astrophysics Data System (ADS)

Chinotti, M.; Ethiraj, J.; Mirri, C.; Zhu, Xiangde; Li, Lijun; Petrovic, C.; Degiorgi, L.

2018-01-01

The emergence of superconductivity upon progressively suppressing the long-range, charge-density-wave (CDW) order characterizes the phase diagram of several materials of interest in the on-going solid-state physics research. Se-doped ZrTe3 compounds provide the most recent, suitable arena in order to investigate the interplay of otherwise competing orders in layeredlike two-dimensional systems. We present an optical study of the CDW state in ZrTe3 -xSex at selected Se dopings, based on the measurement of the reflectivity from the far-infrared up to the ultraviolet, as a function of temperature. We particularly focus our attention to the redistribution of the spectral weight, which images the impact of the CDW state within the optical conductivity across the phase diagram of the title compounds. The electrodynamic response is consistent with a scenario based on a long-range CDW condensate at low Se doping. Upon increasing the Se content, this then gives way to local, short-range order CDW segments. Our spectral weight analysis reveals the presence of a pseudogap phase, as fingerprint of the CDW precursor effects and thus shaping the charge dynamics of the title compounds in their normal state, preceding the onset of superconductivity.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cingarapu, Sreeram; Yang, Zhiqiang; Sorensen, Christopher M.

We report synthesis of CdSe and CdTe quantum dots (QDs) from the bulk CdSe and CdTe material by evaporation/co-condensation using the solvated metal atom dispersion (SMAD) technique and refined digestive ripening. The outcomes of this new process are (1) the reduction of digestive ripening time by employing ligands (trioctylphosphine oxide (TOPO) and oleylamine (OA)) as capping agent as well as digestive ripening solvent, (2) ability to tune the photoluminescence (PL) from 410 nm to 670 nm, (3) demonstrate the ability of SMAD synthesis technique for other semiconductors (CdTe), (4) direct comparison of CdSe QDs growth with CdTe QDs growth based on digestivemore » ripening times, and (5) enhanced PL quantum yield (QY) of CdSe QDs and CdTe QDs upon covering with a ZnS shell. Further, the merit of this synthesis is the use of bulk CdSe and CdTe as the starting materials, which avoids usage of toxic organometallic compounds, eliminates the hot injection procedure, and size selective precipitation processes. It also allows the possibility of scale up. These QDs were characterized by UV-vis, photoluminescence (PL), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and powder XRD.« less

Synthesis, structure, and characterization of two new bismuth(III) selenite/tellurite nitrates: [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Chang-Yu; Wei, Ming-Fang; Geng, Lei, E-mail: lgeng.cn@gmail.com

Two new bismuth(III) selenite/tellurite nitrates, [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}), have been synthesized by conventional facile hydrothermal method at middle temperature 200 °C and characterized by single-crystal X-ray diffraction, powder diffraction, UV–vis–NIR optical absorption spectrum, infrared spectrum and thermal analylsis. Both [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO3)](NO3) crystallize in the monoclinic centronsymmetric space group P2{sub 1}/c with a=9.9403(4) Å, b=9.6857(4) Å, c=10.6864(5) Å, β=93.1150(10)° for [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and a=8.1489(3) Å, b=9.0663(4) Å, c=7.4729(3) Å, β=114.899(2)° for Bi(TeO3)(NO3), respectively. The two compounds, whose structures are composed of three different asymmetricmore » building units, exhibit two different types of structures. The structure of [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) features a three-dimensional (3D) bismuth(III) selenite cationic tunnel structure [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}] {sup 3}{sub ∞} with NO{sub 3}{sup −} anion group filling in the 1D tunnel along b axis. The structure of [Bi(TeO{sub 3})](NO{sub 3}) features 2D bismuth(III) tellurite [Bi(TeO{sub 3}){sub 2}]{sup 2}{sub ∞} layers separated by NO{sub 3}{sup −} anion groups. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory methods show that the two compounds are wide band-gap semiconductors. - Graphical abstract: Two novel bismuth{sup III} selenite/tellurite nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) with 3D tunnel structure and [Bi(TeO{sub 3})](NO{sub 3}) with 2D layer structure have been firstly synthesized and characterized. Display Omitted - Highlights: • Two novel bismuth{sup III} nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}) were firstly synthesized. • The two compounds were wide band-gap semiconductors.« less

Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

PubMed Central

Yu, Chia-Chi; Wu, Hsin-jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

2017-01-01

The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10−20–10−23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10−14–10−17(m2/s)] and Cu [10−8–10−11(m2/s)] in Bi2Te3, respectively. PMID:28327655

Electronic structure and optical properties of iron based chalcogenide FeX2 (X = S, Se, Te) for photovoltaic applications: a first principle study

NASA Astrophysics Data System (ADS)

Ghosh, Anima; Thangavel, R.

2017-11-01

In present work, the electronic structure and optical properties of the FeX2 (X = S, Se, Te) compounds have been evaluated by the density functional theory based on the scalar-relativistic full potential linear augmented plane wave method via Wien2K. From the total energy calculations, it has been found that all the compounds have direct band nature, which determined by iron 3 d states at valance band edge and anion p dominated at conduction band at Γ-point and the fundamental band gap between the valence band and conduction band are estimated 1.40, 1.02 and 0.88 eV respectively with scissor correction for FeS2, FeSe2 and FeTe2 which are close to the experimental values. The optical properties such as dielectric tensor components and the absorption coefficient of these materials are determined in order to investigate their usefulness in photovoltaic applications.

Composition-matched molecular “solders” for semiconductors

NASA Astrophysics Data System (ADS)

Dolzhnikov, Dmitriy S.; Zhang, Hao; Jang, Jaeyoung; Son, Jae Sung; Panthani, Matthew G.; Shibata, Tomohiro; Chattopadhyay, Soma; Talapin, Dmitri V.

2015-01-01

We propose a general strategy to synthesize largely unexplored soluble chalcogenidometallates of cadmium, lead, and bismuth. These compounds can be used as “solders” for semiconductors widely used in photovoltaics and thermoelectrics. The addition of solder helped to bond crystal surfaces and link nano- or mesoscale particles together. For example, CdSe nanocrystals with Na2Cd2Se3 solder was used as a soluble precursor for CdSe films with electron mobilities exceeding 300 square centimeters per volt-second. CdTe, PbTe, and Bi2Te3 powders were molded into various shapes in the presence of a small additive of composition-matched chalcogenidometallate or chalcogel, thus opening new design spaces for semiconductor technologies.

Phase equilibria in the Bi 2TeO 5Bi 2SeO 5 system and a high temperature neutron powder diffraction study of Bi 2SeO 5

NASA Astrophysics Data System (ADS)

Dityatyev, Oleg A.; Smidt, Peer; Stefanovich, Sergey Yu; Lightfoot, Philip; Dolgikh, Valery A.; Opperman, Heinrich

2004-09-01

Phase equilibria in the Bi 2TeO 5Bi 2SeO 5 system were studied by X-ray, DTA and second harmonic generation (SHG). The samples were synthesized by solid state reactions of the Bi, Te and Se oxides. The phase diagram is interpreted as a quasibinary peritectic one with wide ranges of solid solutions on the basis of both compounds. The SHG study showed Bi 2SeO 5 to undergo a phase transition at about 250 °C. Neutron diffraction (25-650 °C) showed no major changes in the structure of Bi 2SeO 5 at high temperatures. However, the analysis of the oxygen atom thermal factors and site occupancies suggested that the mechanism of the phase transformation is an order-disorder transition involving reorientation of the SeO 3 group.

Materials chemistry. Composition-matched molecular "solders" for semiconductors.

PubMed

Dolzhnikov, Dmitriy S; Zhang, Hao; Jang, Jaeyoung; Son, Jae Sung; Panthani, Matthew G; Shibata, Tomohiro; Chattopadhyay, Soma; Talapin, Dmitri V

2015-01-23

We propose a general strategy to synthesize largely unexplored soluble chalcogenidometallates of cadmium, lead, and bismuth. These compounds can be used as "solders" for semiconductors widely used in photovoltaics and thermoelectrics. The addition of solder helped to bond crystal surfaces and link nano- or mesoscale particles together. For example, CdSe nanocrystals with Na2Cd2Se3 solder was used as a soluble precursor for CdSe films with electron mobilities exceeding 300 square centimeters per volt-second. CdTe, PbTe, and Bi2Te3 powders were molded into various shapes in the presence of a small additive of composition-matched chalcogenidometallate or chalcogel, thus opening new design spaces for semiconductor technologies. Copyright © 2015, American Association for the Advancement of Science.

The section TiInSe/sub 2/-TiSbSe/sub 2/ of the system Ti-In-Sb-Se

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guseinov, G.D.; Chapanova, L.M.; Mal'sagov, A.U.

1985-09-01

The ternary compounds A /SUP I/ B /SUP III/ C/sub 2/ /SUP VI/ (A /SUP I/ is univalent Ti; B /SUP III/ is Ga or In; and C /SUP VI/ is S, Se or Te) form a class of semiconductors with a large number of different gap widths. The compounds crystallize in the chalcopyrite structure. Solid solutions based on these compounds, which permit varying smoothly the gap width and other physical parameters over wide limits, are of great interest. The authors synthesized the compounds TiInSe/sub 2/ and TiSbSe/sub 2/ from the starting materials Ti-000, In-000, Sb-000 and Se-OSCh-17-4 by directmore » fusion of the components, taken in a stoichiometric ratio, in quartz ampules evacuated to 1.3 X 10/sup -3/ Pa and sealed.« less

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Brebrick, R. F.; Dudley, M.; Ramachandran, N.; Curreri, Peter A. (Technical Monitor)

2002-01-01

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. The following are the research progress in the past two years. In-situ monitoring of partial pressure by optical absorption technique and visual observation of the growing crystal were performed during vapor growth of ZnSe. Low-temperature photoluminescence (PL) spectra and glow discharge mass spectroscopy (GDMS) were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during crystal growth process. Optical characterization was performed on wafers sliced from the grown crystals of ZnSe, ZnTe and ZnSe(1-x),Te(x), (0

Materials Characterization and Microelectronic Implementation of Metal-insulator Transition Materials and Phase Change Materials

DTIC Science & Technology

2015-03-26

appropriate. Group 16 (VI) contains the following elements: Oxygen (O), sulfur (S), selenium (Se), tellurium (Te), and polonium (Po). They are shown...below in Figure 33. S, Se, and Te are referred to as chalcogens, and their compounds are chalcogenides [68]. Polonium is excluded from the chalcogen...temperature dots and paint were placed on samples on the substrate. Temperature dots are typically used in the transportation of goods such as food in order

Superconductivity in strong spin orbital coupling compound Sb 2Se 3

DOE PAGES

Kong, P. P.; Sun, F.; Xing, L. Y.; ...

2014-10-20

Recently, A 2B 3 type strong spin orbital coupling compounds such as Bi 2Te 3, Bi 2Se 3 and Sb 2Te 3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb 2Se 3 on the other hand was found to be topological trivial, but theoretical studies indicated that the pressure might induce Sb 2Se 3 into a topological nontrivial state. We report on the discovery of superconductivity in Sb 2Se 3 single crystal induced via pressure. Our experiments indicated that Sb 2Se 3 became superconductive at high pressures above 10 GPa proceeded bymore » a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (T C) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. As a result, high pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of T C slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.« less

Study of extending carrier lifetime in ZnTe quantum dots coupled with ZnCdSe quantum well

NASA Astrophysics Data System (ADS)

Fan, W. C.; Chou, W. C.; Lee, J. D.; Lee, Ling; Phu, Nguyen Dang; Hoang, Luc Huy

2018-03-01

We demonstrated the growth of a self-assembled type-II ZnTe/ZnSe quantum dot (QD) structure coupled with a type-I Zn0.88Cd0.12Se/ZnSe quantum well (QW) on the (001) GaAs substrate by molecular beam epitaxy (MBE). As the spacer thickness is less than 2 nm, the carrier lifetime increasing from 20 ns to nearly 200 ns was successfully achieved. By utilizing the time-resolved photoluminescence (TRPL) and PL with different excitation power, we identify the PL emission from the coupled QDs consisting of two recombination mechanisms. One is the recombination between electrons in ZnSe barrier and holes confined within ZnTe QDs, and the other is between electrons confined in Zn0.88Cd0.12Se QW and holes confined within ZnTe QDs. According to the band diagram and power-dependent PL, both of the two recombinations reveal the type-II transition. In addition, the second recombination mechanism dominates the whole carrier recombination as the spacer thickness is less than 2 nm. A significant extension of carrier lifetime by increasing the electron and hole separation is illustrated in a type-II ZnTe/ZnSe QD structure coupling with a type-I ZnCdSe/ZnSe QW. Current sample structure could be used to increase the quantum efficient of solar cell based on the II-VI compound semiconductors.

Molecular structures of Se(SCH3)2 and Te(SCH3)2 using gas-phase electron diffraction and ab initio and DFT geometry optimisations.

PubMed

Fleischer, Holger; Wann, Derek A; Hinchley, Sarah L; Borisenko, Konstantin B; Lewis, James R; Mawhorter, Richard J; Robertson, Heather E; Rankin, David W H

2005-10-07

The molecular structures of Se(SCH(3))(2) and Te(SCH(3))(2) were investigated using gas-phase electron diffraction (GED) and ab initio and DFT geometry optimisations. While parameters involving H atoms were refined using flexible restraints according to the SARACEN method, parameters that depended only on heavy atoms could be refined without restraints. The GED-determined geometric parameters (r(h1)) are: rSe-S 219.1(1), rS-C 183.2(1), rC-H 109.6(4) pm; angleS-Se-S 102.9(3), angleSe-S-C 100.6(2), angleS-C-H (mean) 107.4(5), phiS-Se-S-C 87.9(20), phiSe-S-C-H 178.8(19) degrees for Se(SCH(3))(2), and rTe-S 238.1(2), rS-C 184.1(3), rC-H 110.0(6) pm; angleS-Te-S 98.9(6), angleTe-S-C 99.7(4), angleS-C-H (mean) 109.2(9), phiS-Te-S-C 73.0(48), phiTe-S-C-H 180.1(19) degrees for Te(SCH(3))(2). Ab initio and DFT calculations were performed at the HF, MP2 and B3LYP levels, employing either full-electron basis sets [3-21G(d) or 6-31G(d)] or an effective core potential with a valence basis set [LanL2DZ(d)]. The best fit to the GED structures was achieved at the MP2 level. Differences between GED and MP2 results for rS-C and angleS-Te-S were explained by the thermal population of excited vibrational states under the experimental conditions. All theoretical models agreed that each compound exists as two stable conformers, one in which the methyl groups are on the same side (g(+)g(-) conformer) and one in which they are on different sides (g(+)g(+) conformer) of the S-Y-S plane (Y = Se, Te). The conformational composition under the experimental conditions could not be resolved from the GED data. Despite GED R-factors and ab initio and DFT energies favouring the g(+)g(+) conformer, it is likely that both conformers are present, for Se(SCH(3))(2) as well as for Te(SCH(3))(2).

ZnSe(Te)-based crystals and detectors for nondestructive testing and cargo inspection

NASA Astrophysics Data System (ADS)

Seminozhenko, V. P.; Ryzhikov, V. D.; Opolonin, A. D.; Lisetska, O. K.; Galkin, S. N.; Voronkin, E. F.; Kostyukevich, S. A.

2006-08-01

Due to disadvantages of scintillator ZnSe(Te) - poor transparence to own emission (10 -1 cm -1), long decay time, low density and Z eff-this material had no practical applications in the ranges of X-ray energies about 120-140 keV. After the development of dual energy X-ray inspection scanners, CT and digital radiography situation changed on the contrary at whole. Both theory and experiments show that now it is the best material for low energy array detectors. The pilot-industrial production of ZnSe(Te) crystals is organized, their usage in CT and inspection X-rays scanners being already started. It has become possible to get tomography imaging simultaneously with automatic recognition of dangerous objects and substances, which is due to the unique parameters of ZnSe(Te). Presently several leading western companies look for possibilities to use ZnSe(Te) for medical X-ray CT. Our aim was to unveil the nature of luminescence centers and the emission mechanism in crystals of ZnSe(Te) compounds with isovalent dopants from the results of our studies of optical, spectroscopic and kinetic characteriestics of these crystals. Basing on the obtained understanding of the emission centers, we aimed at creation of a reproducible production technology of scintillators for application in inspection and medical equipment. The research described in this publication was made possible in part by INTAS Project Ref. Nr. 05-104-7519.

Simultaneous speciation and preconcentration of ultra traces of inorganic tellurium and selenium in environmental samples by hollow fiber liquid phase microextraction prior to electrothermal atomic absorption spectroscopy determination.

PubMed

Ghasemi, Ensieh; Najafi, Nahid Mashkouri; Raofie, Farhad; Ghassempour, Alireza

2010-09-15

A simple and effective speciation and preconcentration method based on hollow fiber liquid phase microextraction (HF-LPME) was developed for simultaneous separation of trace inorganic tellurium and selenium in environmental samples prior to electrothermal atomic absorption spectroscopy (ETAAS) determination. The method involves the selective extraction of the Te (IV) and Se (IV) species by HF-LPME with the use of ammonium pyrrolidinecarbodithioate (APDC) as the chelating agent. The complex compounds were extracted into 10 microL of toluene and the solutions were injected into a graphite furnace for the determination of Te (IV) and Se (IV). To determine the total tellurium and selenium in the samples, first Te (VI) and Se (VI) were reduced to Te (IV) and Se (IV), and then the microextraction method was performed. The experimental parameters of HF-LPME were optimized using a central composite design after a 2(n-1) fractional factorial experimental design. Under optimum conditions, enrichment factors of up to 520 and 480 were achieved for Te (IV) and Se (IV), respectively. The detection limits were 4 ng L(-1) with 3.5% RSD (n=5, c=2.0 microg L(-1)) for Te (IV) and 5 ng L(-1) with 3.1% RSD for Se (IV). The applicability of the developed technique was evaluated by application to spiked, environmental water and soil samples. Copyright 2010 Elsevier B.V. All rights reserved.

Effect of Isovalent Substitution on the Electronic Structure and Thermoelectric Properties of the Solid Solution α-As2Te3-xSex (0 ≤ x ≤ 1.5).

PubMed

Vaney, Jean-Baptiste; Delaizir, Gaëlle; Wiendlocha, Bartlomiej; Tobola, Janusz; Alleno, Eric; Piarristeguy, Andrea; Gonçalves, Antonio Pereira; Gendarme, Christine; Malaman, Bernard; Dauscher, Anne; Candolfi, Christophe; Lenoir, Bertrand

2017-02-20

We report on the influence of Se substitution on the electronic band structure and thermoelectric properties (5-523 K) of the solid solution α-As 2 Te 3-x Se x (0 ≤ x ≤ 1.5). All of the polycrystalline compounds α-As 2 Te 3-x Se x crystallize isostructurally in the monoclinic space group C2/m (No. 12, Z = 4). Regardless of the Se content, chemical analyses performed by scanning electron microscopy and electron probe microanalysis indicate a good chemical homogeneity, with only minute amounts of secondary phases for some compositions. In agreement with electronic band structure calculations, neutron powder diffraction suggests that Se does not randomly substitute for Te but exhibits a site preference. These theoretical calculations further predict a monotonic increase in the band gap energy with the Se content, which is confirmed experimentally by absorption spectroscopy measurements. Increasing x up to x = 1.5 leaves unchanged both the p-type character and semiconducting nature of α-As 2 Te 3 . The electrical resistivity and thermopower gradually increase with x as a result of the progressive increase in the band gap energy. Despite the fact that α-As 2 Te 3 exhibits very low lattice thermal conductivity κ L , the substitution of Se for Te further lowers κ L to 0.35 W m -1 K -1 at 300 K. The compositional dependence of the lattice thermal conductivity closely follows classical models of phonon alloy scattering, indicating that this decrease is due to enhanced point-defect scattering.

Thallous chalcogenide (Tl 6I 4Se) for radiation detection at X-ray and γ-ray energies

NASA Astrophysics Data System (ADS)

Liu, Zhifu; Peters, John A.; Wessels, Bruce W.; Johnsen, Simon; Kanatzidis, Mercouri G.

2011-12-01

The optical and charge transport properties of the thallous chalcogenide compound Tl6I4Se were characterized. The semiconductor crystals are grown by the modified Bridgman method. We have measured the refractive index, and absorption coefficient of the compound ranging from 300 to 1500 nm by analysis of the UV-vis-near IR transmission and reflection spectra. The band gap is 1.8 eV. For the evaluation of detector performance, the mobility-lifetime products for both the electron and hole carriers were measured. Tl6I4Se has mobility-lifetime products of 7.1×10-3 and 5.9×10-4 cm2/V for electron and hole carriers, respectively, which are comparable to those of Cd0.9Zn0.1Te. The γ-ray spectrum for a Tl6I4Se detector was measured. Its response to the 122 keV of 57Co source is comparable to that of Cd0.9Zn0.1Te.

Recoilless fractions calculated with the nearest-neighbour interaction model by Kagan and Maslow

NASA Astrophysics Data System (ADS)

Kemerink, G. J.; Pleiter, F.

1986-08-01

The recoilless fraction is calculated for a number of Mössbauer atoms that are natural constituents of HfC, TaC, NdSb, FeO, NiO, EuO, EuS, EuSe, EuTe, SnTe, PbTe and CsF. The calculations are based on a model developed by Kagan and Maslow for binary compounds with rocksalt structure. With the exception of SnTe and, to a lesser extent, PbTe, the results are in reasonable agreement with the available experimental data and values derived from other models.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Brebrick, R. F.; Burger, A.; Dudley, M.; Ramachandran, N.

2003-01-01

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions.

Tuning and synthesis of semiconductor nanostructures by mechanical compression

DOEpatents

Fan, Hongyou; Li, Binsong

2015-11-17

A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

IR Materials Producibility

DTIC Science & Technology

1994-02-01

LiNbO 3. Preliminary prediction of the defect densities in X = 0.17 LWIR Hgl.xZnxTe were made and compared to results in HgCdTe. We continued to...Preliminary prediction of the defect densities in z = 0.17 LWIR Hgl-,Zn:Te. * Continued development of a method to calculate the temperature de- pendence of... LWIR HgZnTe 4 3 WIDE-GAP I-VI COMPOUNDS (ZnSe AS PROTOTYPE) 6 4 NONLINEAR OPTICAL MATERIALS (LiNb0 3 AS THE PROTOTYPE) 9 5 WORK PLANNED 9 APPENDIX A

Y{sub 2}MoSe{sub 3}O{sub 12} and Y{sub 2}MoTe{sub 3}O{sub 12}: Solid-state synthesis, structure determination, and characterization of two new quaternary mixed metal oxides containing asymmetric coordination environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bang, Seong-eun; Pan, Zhi; Kim, Yeong Hun

Two new quaternary yttrium molybdenum selenium/tellurium oxides, Y{sub 2}MoSe{sub 3}O{sub 12} and Y{sub 2}MoTe{sub 3}O{sub 12} have been prepared by standard solid-state reactions using Y{sub 2}O{sub 3}, MoO{sub 3}, and SeO{sub 2} (or TeO{sub 2}) as reagents. Single-crystal X-ray diffraction was used to determine the crystal structures of the reported materials. Although both of the materials contain second-order Jahn–Teller (SOJT) distortive cations and are stoichiometrically similar, they reveal different structural features: while Y{sub 2}MoSe{sub 3}O{sub 12} shows a three-dimensional framework consisting of YO{sub 8}, MoO{sub 6}, and SeO{sub 3} groups, Y{sub 2}MoTe{sub 3}O{sub 12} exhibits a layered structure composed ofmore » YO{sub 8}, MoO{sub 4}, TeO{sub 3}, and TeO{sub 4} polyhedra. With the Mo{sup 6+} cations in Y{sub 2}MoSe{sub 3}O{sub 12}, a C{sub 3}-type intraoctahedral distortion toward a face is observed, in which the direction of the out-of-center distortion for Mo{sup 6+} is away from the oxide ligand linked to a Se{sup 4+} cation. The Se{sup 4+} and Te{sup 4+} cations in both materials are in asymmetric coordination environment attributed to the lone pairs. Elemental analyses, infrared spectroscopy, thermal analyses, intraoctahedral distortions, and dipole moment calculations for the compounds are also presented. - Graphical abstract: Y{sub 2}MoSe{sub 3}O{sub 12} reveals a three-dimensional framework consisting of YO{sub 8}, MoO{sub 6}, and SeO{sub 3} polyhedra, whereas Y{sub 2}MoTe{sub 3}O{sub 12} exhibits a layered structure composed of YO{sub 8}, MoO{sub 4}, TeO{sub 3}, and TeO{sub 4} groups. - Highlights: • Two new selenite and tellurite (Y{sub 2}MoQ{sub 3}O{sub 12}; Q=Se and Te) are synthesized. • Y{sub 2}MoQ{sub 3}O{sub 12} contain second-order Jahn–Teller distortive cations in asymmetric environments. • The intra-octahedral distortion of the Mo{sup 6+} is influenced by the Se{sup 4+}.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malliakas, Christos D.; Chung, Duck Young; Claus, Helmut

Superconductivity was discovered in the layered compound RbBi 11/3Te 6, featuring Bi vacancies and a narrow band gap of 0.25(2) eV at room temperature. In addition, a sharp superconducting transition at similar to 3.2 K was observed in polycrystalline ingots. The superconducting volume fraction of oriented single crystals is almost 100%, confirming bulk superconductivity. Systematic Se and Sb substitutions in RbBi 11/3-ySb ySe xTe 6-x, revealed a dependence of the superconducting transition on composition that can increase the T c up to similar to 10%. The RbBi 11/3Te 6 system is the first member of the new homologous series Rb[Bimore » 2n+11/3Te 3n+6] with infinite Bi 2Te 3-like layers. Lastly, the large degree of chemical tunability of the electronic structure of the homology via doping and/or substitution gives rise to a new family of superconductors.« less

Enhanced thermoelectric properties in Bi and Te doped p-type Cu3SbSe4 compound

NASA Astrophysics Data System (ADS)

Kumar, Aparabal; Dhama, P.; Banerji, P.

2018-04-01

We report the effect of Bi and Te doping on the electrical transport and thermoelectric properties of Cu3SbSe4 with an aim to maximize the power factor and/or minimize the thermal conductivity. A series of Cu3Sb1-xBixSe4-yTey (x = 0, 0.02, 0.04, 0.06, 0.08; y = 0.01) samples were prepared by melt growth technique and ball milling followed by spark plasma sintering. The structural analysis and microstructures were carried out by X-ray diffraction, transmission electron microscopy and Field emission scanning electron microscopy. Electrical resistivity is found to decrease with increase in doping contents, which is due to increase in carrier concentration and formation of acceptor level inside the energy gap. Reduction in thermal conductivity with increase in Bi content is attributed to scattering of phonons through grain boundaries and mass fluctuation. Maximum figure of merit (ZT ˜ 0.76) was achieved in the Cu3Sb0.98Bi0.02Se3.99Te0.01 sample at 650 K, which is approximately twice of the Cu3SbSe4. The results reveal that the Bi and Te doped Cu3SbSe4 leads to remarkable improvement in its thermoelectric properties.

Cytotoxicity and genotoxicity evaluation of organochalcogens in human leucocytes: a comparative study between ebselen, diphenyl diselenide, and diphenyl ditelluride.

PubMed

Caeran Bueno, Diones; Meinerz, Daiane Francine; Allebrandt, Josiane; Waczuk, Emily Pansera; dos Santos, Danúbia Bonfanti; Mariano, Douglas Oscar Ceolin; Rocha, João Batista Teixeira

2013-01-01

Organochalcogens, particularly ebselen, have been used in experimental and clinical trials with borderline efficacy. (PhSe)2 and (PhTe)2 are the simplest of the diaryl dichalcogenides and share with ebselen pharmacological properties. In view of the concerns with the use of mammals in studies and the great number of new organochalcogens with potential pharmacological properties that have been synthesized, it becomes important to develop screening protocols to select compounds that are worth to be tested in vivo. This study investigated the possible use of isolated human white cells as a preliminary model to test organochalcogen toxicity. Human leucocytes were exposed to 5-50  μM of ebselen, (PhSe)2, or (PhTe)2. All compounds were cytotoxic (Trypan's Blue exclusion) at the highest concentration tested, and Ebselen was the most toxic. Ebselen and (PhSe)2 were genotoxic (Comet Assay) only at 50  μM, and (PhTe)2 at 5-50  μM. Here, the acute cytotoxicity did not correspond with in vivo toxicity of the compounds. But the genotoxicity was in the same order of the in vivo toxicity to mice. These results indicate that in vitro genotoxicity in white blood cells should be considered as an early step in the investigation of potential toxicity of organochalcogens.

Development of bismuth tellurium selenide nanoparticles for thermoelectric applications via a chemical synthetic process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Cham; Department of Chemical Engineering, Pohang University of Science and Technology; Kim, Dong Hwan

2011-03-15

Research highlights: {yields} We synthesized a Bi{sub 2}Te{sub y}Se{sub 3-y} nano-compound via a chemical synthetic process. {yields} The compound was sintered to achieve an average grain size of about 300 nm. {yields} The resulting sintered body showed very low thermal conductivity. It is likely caused by the vigorous phonon scattering of the nano-sized grains. -- Abstract: Bismuth tellurium selenide (Bi{sub 2}Te{sub y}Se{sub 3-y}) nanoparticles for thermoelectric applications are successfully prepared via a water-based chemical reaction under atmospheric conditions. The nanostructured compound is prepared using a complexing agent (ethylenediaminetetraacetic acid) and a reducing agent (ascorbic acid) to stabilize the bismuth precursormore » (Bi(NO{sub 3}){sub 3}) in water and to favor the reaction with reduced sources of tellurium and selenium. The resulting powder is smaller than ca. 100 nm and has a crystalline structure corresponding to the rhombohedral Bi{sub 2}Te{sub 2.7}Se{sub 0.3}. The nanocrystalline powder is sintered via a spark plasma sintering process to obtain a sintered body composed of nano-sized grains. Important transport properties of the sintered body are measured to calculate its most important characteristic, the thermoelectric performance. The results demonstrate a relationship between the nanostructure of the sintered body and its thermal conductivity.« less

Ce{sub 2}AgYb{sub 5/3}Se{sub 6}, La{sub 2}CuErTe{sub 5}, and Ce{sub 2}CuTmTe{sub 5}: Three new quaternary interlanthanide chalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babo, Jean-Marie; Albrecht-Schmitt, Thomas E., E-mail: talbrec1@nd.edu

2013-01-15

Three new ordered quaternary interlanthanide chalcogenides, Ce{sub 2}AgYb{sub 5/3}Se{sub 6}, La{sub 2}CuErTe{sub 5}, and Ce{sub 2}CuTmTe{sub 5}, have been prepared by direct reaction of the elements in molten NaBr at 900 Degree-Sign C. Each compound forms a new structure-type. The Ce{sub 2}AgYb{sub 5/3}Se{sub 6} structure consists of {infinity}{sup 2}{l_brace} [AgYb{sub 5/6}Se{sub 6}]{sup 6-}{r_brace} layers intercalated by Ce{sup 3+} cations. These layers are composed of {infinity}{sup 1}{l_brace} [Yb{sub 5/3}Se{sub 6}]{sup 7-}{r_brace} quadruplet ribbons of [YbSe{sub 6}]{sup 9-} octahedra and infinite {infinity}{sup 1}{l_brace} [AgSe{sub 6}]{sup 11-}{r_brace} double chains of [AgSe{sub 5}]{sup 9-}. The La{sub 2}CuErTe{sub 5} structure is made of one-dimensional {infinity}{supmore » 1}{l_brace} [CuErTe{sub 5}]{sup 6-}{r_brace} ribbons separated by La{sup 3+} cations. These ribbons are formed by cis-edge sharing {infinity}{sup 1}{l_brace} [CuTe{sub 2}]{sup 3-}{r_brace} tetrahedral chains and trans-edge sharing {infinity}{sup 1}{l_brace} [ErTe{sub 4}]{sup 5-}{r_brace} chains. While La{sub 2}CuErTe{sub 5} crystallizes in the orthorhombic space group Pnma, Ce{sub 2}CuTmTe{sub 5} crystallizes in the monoclinic space group C2/m. The latter crystal structure is assembled from {infinity}{sup 2}{l_brace} [CuTmTe{sub 5}]{sup 6-}{r_brace} layers intercalated by Ce{sup 3+} cations. These layers consist of single {infinity}{sup 1}{l_brace} [TmTe{sub 4}]{sup 5-}{r_brace} chains connected to each other through dimers or pseudo-double chains. - Graphical abstract: [CuTe{sub 4}]{sup 7-} tetrahedra sharing cis-edges to yield chains in the La{sub 2}CuErTe{sub 5}. Highlights: Black-Right-Pointing-Pointer New ordered interlanthanide tellurides. Black-Right-Pointing-Pointer New quaternary chalcogenides. Black-Right-Pointing-Pointer Low-dimensional lanthanide chalcogenide substructures. Black-Right-Pointing-Pointer Flux synthesis of new chalcogenides.« less

Focus on superconducting properties of iron chalcogenides

NASA Astrophysics Data System (ADS)

Takano, Yoshihiko

2012-10-01

Since the discovery of iron-based superconductors, much attention has been given to the exploration of new superconducting compounds. Numerous superconducting iron compounds have been found and categorized into five groups: LnFeAsO (Ln = lanthanide), BaFe2As2, KFeAs, FeSe and FeAs with perovskite blocking layers. Among them, FeSe has the simplest crystal structure. Since the crystal structure is composed of only superconducting Fe layers, the FeSe family must be the best material to investigate the mechanism of iron-based superconductivity. FeSe shows very strong pressure effects. The superconducting transition temperature (Tc) of FeSe is approximately 8 K at ambient pressure. However Tc dramatically increases up to 37 K under applied pressure of 4-6 GPa. This is the third highest Tc value among binary superconductors, surpassed only by CsC60 under pressure (Tc = 38 K) and MgB2 (Tc = 39 K). On the other hand, despite FeTe having a crystal structure analogous to that of FeSe, FeTe shows antiferromagnetic properties without superconductivity. Doping of small ions, either Se or S, however, can induce superconductivity in FeTe1-xSex or FeTe1-xSx . The superconductivity is very weak for small x values, and annealing under certain conditions is required to obtain strong superconductivity, for instance annealing in oxygen or alcoholic beverages such as red wine. The following selection of papers describe many important experimental and theoretical studies on iron chalcogenide superconductors including preparation of single crystals, bulk samples and thin films; NMR measurements; photoemission spectroscopy; high-pressure studies; annealing effects and research on new BiS2-based superconductors. I hope this focus issue will help researchers understand the frontiers of iron chalcogenide superconductors and assist in the discovery of new phenomena related to iron-based superconductivity.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Brebrick, R. F.; Burger, A.; Dudley, M.; Matyi, R.; Ramachandran, N.; Sha, Yi-Gao; Volz, M.; Shih, Hung-Dah

1999-01-01

Complete and systematic ground-based experimental and theoretical analyses on the Physical Vapor Transport (PVT) of ZnSe and related ternary compound semiconductors have been performed. The analyses included thermodynamics, mass flux, heat treatment of starting material, crystal growth, partial pressure measurements, optical interferometry, chemical analyses, photoluminescence, microscopy, x-ray diffraction and topography as well as theoretical, analytical and numerical analyses. The experimental results showed the influence of gravity orientation on the characteristics of: (1) the morphology of the as-grown crystals as well as the as-grown surface morphology of ZnSe and Cr doped ZnSe crystals; (2) the distribution of impurities and defects in ZnSe grown crystals; and (3) the axial segregation in ZnSeTe grown crystals.

Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift

NASA Astrophysics Data System (ADS)

Lyubomirsky, Igor; Rabinal, M. K.; Cahen, David

1997-05-01

We show that the transient ion drift (TID) method, which is based on recording junction capacitance under constant reverse bias [A. Zamouche, T. Heiser, and A. Mesli, Appl. Phys. Lett. 66, 631 (1995)], can be used not only for measurements of the diffusion coefficient of mobile impurities, but also to estimate the concentration of mobile species as part of the total dopant density. This is illustrated for CdTe, contaminated by Cu, and intentionally doped by Li or Ag and for CuInSe2. We show also that, with some restrictions, the TID method can be used if the mobile ions are major dopants. This is demonstrated using Schottky barriers on CdTe, and p-n junction devices in (Hg,Cd)Te, and CuInSe2. The values that we obtain for the diffusion coefficients (for Li, Ag, and Cu in CdTe and for Cu in CuInSe2) agree well with measured or extrapolated values, obtained by other methods, as reported in the literature. Furthermore, we could distinguish between diffusion and chemical reactions of dopants, as demonstrated for the case of Cu in CdTe and Ag-doped (Hg,Cd)Te. In the former case this allows us to separate copper-free from contaminated CdTe samples.

Superconductivity in the Narrow Gap Semiconductor RbBi 11/3Te 6

DOE PAGES

Malliakas, Christos D.; Chung, Duck Young; Claus, Helmut; ...

2016-10-16

Superconductivity was discovered in the layered compound RbBi 11/3Te 6, featuring Bi vacancies and a narrow band gap of 0.25(2) eV at room temperature. In addition, a sharp superconducting transition at similar to 3.2 K was observed in polycrystalline ingots. The superconducting volume fraction of oriented single crystals is almost 100%, confirming bulk superconductivity. Systematic Se and Sb substitutions in RbBi 11/3-ySb ySe xTe 6-x, revealed a dependence of the superconducting transition on composition that can increase the T c up to similar to 10%. The RbBi 11/3Te 6 system is the first member of the new homologous series Rb[Bimore » 2n+11/3Te 3n+6] with infinite Bi 2Te 3-like layers. Lastly, the large degree of chemical tunability of the electronic structure of the homology via doping and/or substitution gives rise to a new family of superconductors.« less

Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

NASA Technical Reports Server (NTRS)

Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

2001-01-01

Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(sub x)V(sub 1-x) alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(sub x)V(sub 1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(sub x)Te(sub 1-x) and ZnSe(sub y)Te(sub 1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(sub y)Te(sub 1-y) alloys in the entire composition range, y between 0 and 1. The samples used in this study are bulk ZnSe(sub y)Te(sub 1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k(sup dot)p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(sub y)Te(sub 1-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.

Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys

NASA Technical Reports Server (NTRS)

Yu, Kin Man; Wu, J.; Walukiewicz, W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Ramdas, A.; Su, Ching-Hua; Whitaker, Ann F. (Technical Monitor)

2001-01-01

Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(x)V(1-x), alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(x),V(1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(x)Te(l-x) and ZnSe(Y)Te(1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(y)Te(1-y) alloys in the entire composition range, 0 less than or equal to y less than or equal to 1. The samples used in this study are bulk ZnSe(y)Te(1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(y)Te(l-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.

Ab initio Studies of Magnetism in the Iron Chalcogenides FeTe and FeSe

NASA Astrophysics Data System (ADS)

Hirayama, Motoaki; Misawa, Takahiro; Miyake, Takashi; Imada, Masatoshi

2015-09-01

The iron chalcogenides FeTe and FeSe belong to the family of iron-based superconductors. We study the magnetism in these compounds in the normal state using the ab initio downfolding scheme developed for strongly correlated electron systems. In deriving ab initio low-energy effective models, we employ the constrained GW method to eliminate the double counting of electron correlations originating from the exchange correlations already taken into account in the density functional theory. By solving the derived ab initio effective models, we reveal that the elimination of the double counting is important in reproducing the bicollinear antiferromagnetic order in FeTe, as is observed in experiments. We also show that the elimination of the double counting induces a unique degeneracy of several magnetic orders in FeSe, which may explain the absence of the magnetic ordering. We discuss the relationship between the degeneracy and the recently found puzzling phenomena in FeSe as well as the magnetic ordering found under pressure.

Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

NASA Technical Reports Server (NTRS)

Volz, M. P.; Gillies, D. C.; Szofran, F. R.; Lehoczky, S. L.; Su, Ching-Hua; Sha, Yi-Gao; Zhou, W.; Dudley, M.; Liu, Hao-Chieh; Brebrick, R. F.;

Tunable (δπ, δπ)-Type Antiferromagnetic Order in α-Fe(Te,Se) Superconductors

NASA Astrophysics Data System (ADS)

Bao, Wei; Qiu, Y.; Huang, Q.; Green, M. A.; Zajdel, P.; Fitzsimmons, M. R.; Zhernenkov, M.; Chang, S.; Fang, Minghu; Qian, B.; Vehstedt, E. K.; Yang, Jinhu; Pham, H. M.; Spinu, L.; Mao, Z. Q.

2009-06-01

The new α-Fe(Te,Se) superconductors share the common iron building block and ferminology with the LaFeAsO and BaFe2As2 families of superconductors. In contrast with the predicted commensurate spin-density-wave order at the nesting wave vector (π, 0), a completely different magnetic order with a composition tunable propagation vector (δπ, δπ) was determined for the parent compound Fe1+yTe in this powder and single-crystal neutron diffraction study. The new antiferromagnetic order survives as a short-range one even in the highest TC sample. An alternative to the prevailing nesting Fermi surface mechanism is required to understand the latest family of ferrous superconductors.

Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe.

PubMed

Samanta, Manisha; Pal, Koushik; Pal, Provas; Waghmare, Umesh V; Biswas, Kanishka

2018-05-02

Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi 2 ) sandwiched between two Bi 2 Se 3 quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performance of BiSe is realized through the ultralow lattice thermal conductivity (κ lat of ∼0.6 W/mK at 300 K), which is significantly lower than that of Bi 2 Se 3 (κ lat of ∼1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi 2 ) m (Bi 2 Se 3 ) n . Phonon dispersion calculated from first-principles and the experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow κ lat . These low energy optical phonon branches couple strongly with the heat carrying acoustic phonons, and consequently suppress the phonon mean free path leading to low κ lat . Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ∼ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature.

Forbidden phonon: Dynamical signature of bond symmetry breaking in the iron chalcogenides

DOE PAGES

Fobes, David M.; Zaliznyak, Igor A.; Tranquada, John M.; ...

2016-09-01

Investigation of the inelastic neutron scattering spectra in Fe 1+yTe 1₋xSe x near a signature wave vector Q=(1,0,0) for the bond-order wave (BOW) formation of parent compound Fe 1+yTe reveals an acoustic-phonon-like dispersion present in all structural phases. While a structural Bragg peak accompanies the mode in the low-temperature phase of Fe 1+yTe, it is absent in the high-temperature tetragonal phase, where Bragg scattering at this Q is forbidden by symmetry. Notably, this mode is also observed in superconducting FeTe 0.55Se 0.45, where structural and magnetic transitions are suppressed, and no BOW has been observed. Lastly, the presence of thismore » “forbidden” phonon indicates that the lattice symmetry is dynamically or locally broken by magneto-orbital BOW fluctuations, which are strongly coupled to lattice in these materials.« less

Tunable multifunctional topological insulators in ternary Heusler and related compounds

NASA Astrophysics Data System (ADS)

Felser, Claudia

2011-03-01

Recently the quantum spin Hall effect was theoretically predicted and experimentally realized in quantum wells based on the binary semiconductor HgTe. The quantum spin Hall state and topological insulators are new states of quantum matter interesting for both fundamental condensed-matter physics and material science. Many Heusler compounds with C1b structure are ternary semiconductors that are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the bandgap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by the lattice parameter) and magnitude of spin--orbit coupling (by the atomic charge). Based on first-principle calculations we demonstrate that around 50 Heusler compounds show band inversion similar to that of HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantumwell structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare-earth element Ln, which can realize additional properties ranging from superconductivity (for example LaPtBi) to magnetism (for example GdPtBi) and heavy fermion behaviour (for example YbPtBi). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors. Heusler compounds are similar to a stuffed diamond, correspondingly, it should be possible to find the ``high Z'' equivalent of graphene in a graphite-like structure with 18 valence electrons and with inverted bands. Indeed the ternary compounds, such as LiAuSe and KHgSb with a honeycomb structure of their Au-Se and Hg-Sb layers feature band inversion very similar to HgTe which is a strong precondition for existence of the topological surface states. These materials have a gap at the Fermi energy and are therefore candidates for 3D-topological insulators. Additionally they are centro-symmetric, therefore, it is possible to determine the parity of their wave functions, and hence, their topological character. Surprisingly, the compound KHgSb with the strong SOC is topologically trivial, whereas LiAuSe is found to be a topological non-trivial insulator.

Tetradymites as thermoelectrics and topological insulators

NASA Astrophysics Data System (ADS)

Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin

2017-10-01

Tetradymites are M2X3 compounds — in which M is a group V metal, usually Bi or Sb, and X is a group VI anion, Te, Se or S — that crystallize in a rhombohedral structure. Bi2Se3, Bi2Te3 and Sb2Te3 are archetypical tetradymites. Other mixtures of M and X elements produce common variants, such as Bi2Te2Se. Because tetradymites are based on heavy p-block elements, strong spin-orbit coupling greatly influences their electronic properties, both on the surface and in the bulk. Their surface electronic states are a cornerstone of frontier work on topological insulators. The bulk energy bands are characterized by small energy gaps, high group velocities, small effective masses and band inversion near the centre of the Brillouin zone. These properties are favourable for high-efficiency thermoelectric materials but make it difficult to obtain an electrically insulating bulk, which is a requirement of topological insulators. This Review outlines recent progress made in bulk and thin-film tetradymite materials for the optimization of their properties both as thermoelectrics and as topological insulators.

Pressure-volume relations and bulk modulus under pressure of tetrahedral compounds

NASA Astrophysics Data System (ADS)

Soma, T.; Takahashi, Y.; Kagaya, H.-M.

1985-03-01

The pressure-volume relation and the compression effect on the bulk modulus of tetrahedral compounds such as GaP, InP, ZnS, ZnSe, ZnTe and CdTe are investigated from the electronic theory of solids by using a recently presented binding force, which includes mainly covalent interactions in the pseudopotential formalism and partially ionic interactions. The calculated results of the pressure-volume relations involving the pressure-induced phase transition are useful when comparing with the experimental data under high pressure. The calculated bulk modulus of these compounds increases as the crystal volume decreases. Further, the pressure derivative of bulk modulus is not constant and decreases with the reduction of the crystal volume.

Thermoelectric Behavior of Low Thermal Conductivity Cu-based and IV-V Chalcogenides

NASA Astrophysics Data System (ADS)

Olvera, Alan Anthony

In an ever-changing global environment, energy-related issues have become a central feature in the day-to-day conversations of the general public. A niche field that has recently made major advancements in conversion performance is thermoelectric (TE) energy conversion, where progress in material optimization has resulted in the highest efficiency thermoelectric materials to date. This includes superionic copper chalcogenides and IV-VI selenide compounds, such as Cu2Se and PbSe. Hence, this work focuses on the reliable synthesis and characterization of thermoelectric Cu-based and IV-V compounds. The electronic and optical properties of Cu-based energy conversion materials are greatly affected by synthesis-induced defects. To alleviate this issue, a novel method is developed using the topochemical redox reaction of CuSe 2 into the desired material. It is predicted that CuSe2 -serves as a sacrificial structural template for the facile synthesis of structurally related materials. This was specifically verified in the case of CuInSe 2, where CuSe2 is gradually transformed into CuInSe 2 when reacted with elemental indium. Evidently, this synthetic method is a potential avenue for new material prediction and fabrication of novel composite materials. Using the method described, a composite of CuInSe2 and the known TE material, Cu2Se, is formed. Considering the structural similarity of both compounds, the efficiency of Cu2Se is drastically increased due to enhanced carrier mobility provided by tetrahedral indium subunits. These subunits simultaneously disrupt phonon propagation which result in reduced thermal conductivity and increased TE efficiency (ZT ≈ 2.6 at 850K). More significant is the increased chemical stability of Cu2Se while under applied current and temperature. It is observed that 1 mol % indium stabilizes Cu-ion migration, encouraging the commercialization of Cu 2Se. Currently, CuAgSe is the only promising n-type Cu-based superionic TE material. Accordingly, to find a compatible material for p-type Cu2Se at high temperatures, a series of materials with the formula Cu4-xAgxSe2 were synthesized. It was found that the composition of Cu3AgSe2 ( x = 1) is a two-phase mixture at low temperatures but becomes a single-phase p-type superionic material above 440 K. On the other hand, CuAg 3Se2 (x = 3) remains a two-phase n-type mixture throughout the measured temperature range, contrary to reports of CuAg3Se2 as a single-phase high temperature material. The most important finding is the high temperature n-type behavior of CuAgSe (x = 2), which is the first instance of CuAgSe as an n-type superionic material above 470 K. It is proposed that off-stoichiometry leads to p-type behavior of CuAgSe. Moving to IV-V compounds, a detailed experimental and computational study of the material Pb7Bi4Se13 shows excellent thermoelectric properties for a non-optimized system. It behaves as an n-type material with a small band gap of about 0.23 eV, which is confirmed by band structure calculations and experimental results. It demonstrates ultralow thermal conductivity largely due to the complex atomic-scale structure and heavy constituent atoms. This results in a ZT of approximately 0.9 at 775 K, which is a promising value for further optimization. Additional results from CuSe2 structural template reactions show that several composite materials and new materials can be predicted and synthesized. This includes Cu2Se-Cu(Ga,Al)Se2 composites and new materials such as Cu(Zn,Ni)1.5Se2 and CuPb 0.75Se2. Further work in Sn-Bi-Se compounds is discussed due their complex crystal structure that may result in promising thermoelectric properties. Finally, the preliminary results of high entropy chalcogenides are presented with discussion on future development.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

2003-01-01

The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows. ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, were grown by vapor transport technique with real time in situ non-invasive monitoring techniques. The grown crystals were characterized extensively to correlate the grown crystal properties with the growth conditions. Significant effects of gravity vector orientation on the growth crystal morphology and point defect distribution were observed.

Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

NASA Technical Reports Server (NTRS)

Su, Ching-Hua

2014-01-01

A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

Electronic structure of ZrX2 (X = Se, Te)

NASA Astrophysics Data System (ADS)

Shkvarin, A. S.; Merentsov, A. I.; Shkvarina, E. G.; Yarmoshenko, Yu. M.; Píš, I.; Nappini, S.; Titov, A. N.

2018-03-01

The electronic structure of the ZrX2 (X = Se, Te) compounds has been studied using photoelectron, resonant photoelectron and X-ray absorption spectroscopy, theoretical calculations of the X-ray absorption spectra, and density of electronic states. It was found that the absorption spectra and valence band spectra are influenced by the chalcogen type. The results of the multiplet calculation of the Zr4+ atom show that the change in the splitting in the crystal field, which is described by the 10Dq parameter, is due to the change in the ratio of covalent and ionic contributions to the chemical bond. The resonance band near the Fermi level in the valence band spectra is observed for ZrTe2 in the Zr 3p-4d resonant excitation mode. The extent of photon energy indicates the charge localization on the Zr atom. Similar resonance band for ZrSe2 is absent; it indicates the presence of a gap at the Fermi level.

Electronic and optical properties of mixed Be-chalcogenides

NASA Astrophysics Data System (ADS)

Khan, Imad; Ahmad, Iftikhar; Zhang, D.; Rahnamaye Aliabad, H. A.; Jalali Asadabadi, S.

2013-02-01

The electronic and optical properties of BeSxSe1-x, BeSxTe1-x and BeSexTe1-x, (0≤x≤1) are studied using the highly accurate modified Beck and Johnson (mBJ) potential. The binary Be-chalcogenides are wide and indirect band gap semiconductors and hence they are not efficient materials for optoelectronics. In order to modify them into optically active materials, the anion chalcogen atoms are partially replaced by other chalcogen atoms like BeSxSe1-x, BeSxTe1-x and BeSexTe1-x (0≤x≤1). The modified ternary compounds are of direct band gap nature and hence they are optically active. Some of these direct band gap materials are lattice matched with silicon and can possibly replace Si in semiconductor devices. Keeping in view the importance of these materials in optoelectronics, the optical properties of BeSxSe1-x, BeSxTe1-x and BeSexTe1-x in the full composition range are investigated. It is found that these materials are transparent in the IR, visible and near UV spectral regions. The alloys for the most of the concentrations have band gaps larger than 3 eV, so it is expected that they may be efficient materials for blue, green and UV light emitting diodes.

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE PAGES

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse; ...

2017-01-06

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

High-pressure NaCl-phase of tetrahedral compounds

NASA Astrophysics Data System (ADS)

Soma, T.; -Matsuo Kagaya, H.

1984-04-01

The phase transition of tetrahedral compounds such as GaP, InP, ZnS, ZnSe, ZnTe and CdTe under pressure is investigated from the electronic theory of solids by using our recently presented binding force, which includes mainly covalent interactions in the pseudopotential formalism and partially ionic interactions. The partially ionic forces give the important contributions to the high-pressure phase and stabilize the NaCl-type structure for the high-pressure phase of these compounds, although not reported for GaP experimentally. Then, the numerical results such as the transition pressure, the volume-discontinuity, the transition heat with respect to the pressure-induced phase transition from the zinc-blende-to the NaCl-type lattice are obtained theoretically.

High Thermoelectric Performance in Copper Telluride

DOE PAGES

He, Ying; Zhang, Tiansong; Shi, Xun; ...

2015-06-21

Recently, Cu 2-δ S and Cu 2-δ Se were reported to have an ultralow thermal conductivity and high thermoelectric figure of merit zT. Thus, as a member of the copper chalcogenide group, Cu 2-δ Te is expected to possess superior zTs because Te is less ionic and heavy. However, the zT value is low in the Cu 2Te sintered using spark plasma sintering, which is typically used to fabricate high-density bulk samples. In addition, the extra sintering processes may change the samples’ compositions as well as their physical properties, especially for Cu 2Te, which has many stable andmore » meta-stable phases as well as weaker ionic bonding between Cu and Te as compared with Cu 2S and Cu 2Se. In this study, high-density Cu 2Te samples were obtained using direct annealing without a sintering process. In the absence of sintering processes, the samples’ compositions could be well controlled, leading to substantially reduced carrier concentrations that are close to the optimal value. The electrical transports were optimized, and the thermal conductivity was considerably reduced. The zT values were significantly improved—to 1.1 at 1000 K—which is nearly 100% improvement. Furthermore, this method saves substantial time and cost during the sample’s growth. The study demonstrates that Cu 2-δ X (X=S, Se and Te) is the only existing system to show high zTs in the series of compounds composed of three sequential primary group elements.« less

Topological Insulators in Ternary Compounds with a Honeycomb Lattice

NASA Astrophysics Data System (ADS)

Zhang, Hai-Jun; Chadov, Stanislav; Müchler, Lukas; Yan, Binghai; Qi, Xiao-Liang; Kübler, Jürgen; Zhang, Shou-Cheng; Felser, Claudia

2011-04-01

We investigate a new class of ternary materials such as LiAuSe and KHgSb with a honeycomb structure in Au-Se and Hg-Sb layers. We demonstrate the band inversion in these materials similar to HgTe, which is a strong precondition for existence of the topological surface states. In contrast with graphene, these materials exhibit strong spin-orbit coupling and a small direct band gap at the Γ point. Since these materials are centrosymmetric, it is straightforward to determine the parity of their wave functions, and hence their topological character. Surprisingly, the compound with strong spin-orbit coupling (KHgSb) is trivial, whereas LiAuSe is found to be a topological insulator.

New volatile selenium and tellurium species in fermentation gases produced by composting duck manure

NASA Astrophysics Data System (ADS)

Pinel-Raffaitin, P.; Pécheyran, C.; Amouroux, D.

The occurrence of volatile metal(loid) compounds is investigated in gases released from a compost composed of pine shavings, duck feathers and duck excreta. The fermentation gases were sampled using Tedlar bags, pre-concentrated with cryogenic trap and finally analysed by cryo-trapping followed by gas chromatography hyphenated to inductively coupled mass spectrometry (CT-GC-ICPMS). In addition to arsenic (As), bismuth (Bi), lead (Pb), antimony (Sb) and tin (Sn) volatile species, up to eight selenium (Se) and seven tellurium (Te) species, namely methylated, ethylated and mixed methyl-ethylated ones, are detected for the first time. Although few volatile species standards are available, their identification or semi-identification is established by using quantitative structure-activity relationship (QSAR) through the correlation between boiling point and retention time of each compound. Their semi-quantification highlights maximal concentrations ranging from 30 to 2300 ng m -3 for Se species and from 10 to 500 ng m -3 for Te species. The variations of their concentrations are examined by emphasizing the influences of both compost nature and compost maturation stage. Finally, the results obtained in this study outline the diversity and the quantity of Se and Te species especially in comparison with other fermentation gases. Their release could thus induce "olfactory pollution" and potential sanitary and environmental impacts if no effluent treatment is applied during the compost production.

Metal-free inorganic ligands for colloidal nanocrystals: S2-, HS-, Se2-, HSe-, Te2-, HTe-, TeS3(2-), OH-, and NH2- as surface ligands.

PubMed

Nag, Angshuman; Kovalenko, Maksym V; Lee, Jong-Soo; Liu, Wenyong; Spokoyny, Boris; Talapin, Dmitri V

2011-07-13

All-inorganic colloidal nanocrystals were synthesized by replacing organic capping ligands on chemically synthesized nanocrystals with metal-free inorganic ions such as S(2-), HS(-), Se(2-), HSe(-), Te(2-), HTe(-), TeS(3)(2-), OH(-) and NH(2)(-). These simple ligands adhered to the NC surface and provided colloidal stability in polar solvents. The versatility of such ligand exchange has been demonstrated for various semiconductor and metal nanocrystals of different size and shape. We showed that the key aspects of Pearson's hard and soft acids and bases (HSAB) principle, originally developed for metal coordination compounds, can be applied to the bonding of molecular species to the nanocrystal surface. The use of small inorganic ligands instead of traditional ligands with long hydrocarbon tails facilitated the charge transport between individual nanocrystals and opened up interesting opportunities for device integration of colloidal nanostructures.

Speciation and identification of tellurium-containing metabolites in garlic, Allium sativum.

PubMed

Anan, Yasumi; Yoshida, Miyuki; Hasegawa, Saki; Katai, Ryota; Tokumoto, Maki; Ouerdane, Laurent; Łobiński, Ryszard; Ogra, Yasumitsu

2013-09-01

Tellurium (Te) is a widely used metalloid in industry because of its unique chemical and physical properties. However, information about the biological and toxicological activities of Te in plants and animals is limited. Although Te is expected to be metabolized in organisms via the same pathway as sulfur and selenium (Se), no precise metabolic pathways are known in organisms, particularly in plants. To reveal the metabolic pathway of Te in plants, garlic, a well-known Se accumulator, was chosen as the model plant. Garlic was hydroponically cultivated and exposed to sodium tellurate, and Te-containing metabolites in the water extract of garlic leaves were identified using HPLC coupled with inductively coupled plasma mass spectrometry (ICP-MS) or electrospray tandem mass spectrometry (ESI-MS-MS). At least three Te-containing metabolites were detected using HPLC-ICP-MS, and two of them were subjected to HPLC-ESI-MS-MS for identification. The MS spectra obtained by ESI-MS-MS indicated that the metabolite was Te-methyltellurocysteine oxide (MeTeCysO). Then, MeTeCysO was chemically synthesized and its chromatographic behavior matched with that of the Te-containing metabolite in garlic. The other was assigned as cysteine S-methyltellurosulfide. These results suggest that garlic can assimilate tellurate, an inorganic Te compound, and tellurate is transformed into a Te-containing amino acid, the so-called telluroamino acid. This is the first report addressing that telluroamino acid is de novo synthesized in a higher plant.

Reverse Monte Carlo simulation of Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdel-Baset, A. M.; Rashad, M.; Moharram, A. H.

2013-12-16

Two-dimensional Monte Carlo of the total pair distribution functions g(r) is determined for Se{sub 80}Te{sub 20} and Se{sub 80}Te{sub 15}Sb{sub 5} alloys, and then it used to assemble the three-dimensional atomic configurations using the reverse Monte Carlo simulation. The partial pair distribution functions g{sub ij}(r) indicate that the basic structure unit in the Se{sub 80}Te{sub 15}Sb{sub 5} glass is di-antimony tri-selenide units connected together through Se-Se and Se-Te chain. The structure of Se{sub 80}Te{sub 20} alloys is a chain of Se-Te and Se-Se in addition to some rings of Se atoms.

Cs0.9Ni3.1Se3: A Ni-Based Quasi-One-Dimensional Conductor with Spin-Glass Behavior.

PubMed

Sun, Fan; Guo, Zhongnan; Liu, Ning; Wu, Dan; Lin, Jiawei; Cheng, Erjian; Ying, Tianping; Li, Shiyan; Yuan, Wenxia

2018-04-02

In this work, we report the discovery of a new Ni-based quasi-one-dimensional selenide: Cs 0.9 Ni 3.1 Se 3 . This compound adopts the TlFe 3 Te 3 -type structure with space group P6 3 / m, which consists of infinite [Ni 3 Se 3 ] chains with face-sharing Ni 6 octahedra along the c direction. The lattice parameters are calculated as a = 9.26301(4) Å and c = 4.34272(2) Å, with the Ni-Ni distance in the ab plane as 2.582(3) Å, suggesting the formation of a Ni-Ni metallic bond in this compound. Interestingly, it has been found that Cs 0.9 Ni 3.1 Se 3 is nonstoichiometric, which is different from the other TlFe 3 Te 3 -type phases reported so far. Structure refinement shows that the extra Ni atom in the structure may occupy the 2c site, together with Cs atoms. Cs 0.9 Ni 3.1 Se 3 shows metallic behavior with monotonously decreased resistivity with temperatures from 300 to 0.5 K. Measurements on the magnetic susceptibility display a spin-glass state below 7 K. The specific heat curve gives a Sommerfeld coefficient of 14.6 mJ·K -2 ·mol -1 and a Debye temperature of 143.6 K. The discovery of this new compound enriches the diversity of low-dimensional materials in a transition-metal-based family and also sheds light on the structure-property relationship of this system.

Electronic structure of ruthenium-doped iron chalcogenides

NASA Astrophysics Data System (ADS)

Winiarski, M. J.; Samsel-Czekała, M.; Ciechan, A.

2014-12-01

The structural and electronic properties of hypothetical RuxFe1-xSe and RuxFe1-xTe systems have been investigated from first principles within the density functional theory (DFT). Reasonable values of lattice parameters and chalcogen atomic positions in the tetragonal unit cell of iron chalcogenides have been obtained with the use of norm-conserving pseudopotentials. The well known discrepancies between experimental data and DFT-calculated results for structural parameters of iron chalcogenides are related to the semicore atomic states which were frozen in the used here approach. Such an approach yields valid results of the electronic structures of the investigated compounds. The Ru-based chalcogenides exhibit the same topology of the Fermi surface (FS) as that of FeSe, differing only in subtle FS nesting features. Our calculations predict that the ground states of RuSe and RuTe are nonmagnetic, whereas those of the solid solutions RuxFe1-xSe and RuxFe1-xTe become the single- and double-stripe antiferromagnetic, respectively. However, the calculated stabilization energy values are comparable for each system. The phase transitions between these magnetic arrangements may be induced by slight changes of the chalcogen atom positions and the lattice parameters a in the unit cell of iron selenides and tellurides. Since the superconductivity in iron chalcogenides is believed to be mediated by the spin fluctuations in single-stripe magnetic phase, the RuxFe1-xSe and RuxFe1-xTe systems are good candidates for new superconducting iron-based materials.

Spectroscopic evidence for temperature-dependent convergence of light- and heavy-hole valence bands of PbQ (Q = Te, Se, S)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, J.; Malliakas, C. D.; Wijayaratne, K.

2017-01-01

We have conducted a temperature- dependent angle-resolved photoemission spectroscopy (ARPES) study of the electronic structures of PbTe, PbSe and PbS. Our ARPES data provide direct evidence for the light-hole upper valence bands (UVBs) and hitherto undetected heavy-hole lower valence bands (LVBs) in these materials. An unusual temperature-dependent relative movement between these bands leads to a monotonic decrease in the energy separation between their maxima with increasing temperature, which is known as band convergence and has long been believed to be the driving factor behind extraordinary thermoelectric performances of these compounds at elevated temperatures.

Spectroscopic evidence for temperature-dependent convergence of light- and heavy-hole valence bands of PbQ (Q = Te, Se, S)

NASA Astrophysics Data System (ADS)

Zhao, J.; Malliakas, C. D.; Wijayaratne, K.; Karlapati, V.; Appathurai, N.; Chung, D. Y.; Rosenkranz, S.; Kanatzidis, M. G.; Chatterjee, U.

2017-01-01

We have conducted a temperature-dependent angle-resolved photoemission spectroscopy (ARPES) study of the electronic structures of PbTe, PbSe and PbS. Our ARPES data provide direct evidence for the light-hole upper valence bands (UVBs) and hitherto undetected heavy-hole lower valence bands (LVBs) in these materials. An unusual temperature-dependent relative movement between these bands leads to a monotonic decrease in the energy separation between their maxima with increasing temperature, which is known as band convergence and has long been believed to be the driving factor behind extraordinary thermoelectric performances of these compounds at elevated temperatures.

Ultra-low thermal conductivity of TlIn5Se8 and structure of the new complex chalcogenide Tl0.98In13.12Se16.7Te2.3

NASA Astrophysics Data System (ADS)

Lefèvre, Robin; Berthebaud, David; Pérez, Olivier; Pelloquin, Denis; Boudin, Sophie; Gascoin, Franck

2017-06-01

TlIn5Se8 has been synthesized by means of solid-state reaction and densified by Spark Plasma Sintering. The compound is a semiconductor with a band gap of 1.62 eV estimated from reflectance measurements. Its thermal conductivity is about 0.45 W m-1. K-1 in the temperature range 300-673 K, an extremely low value attributed to its complex pseudo-1D structure reminiscent of the pseudo-hollandite. While attempting to dope TlIn5Se8 with Te, a new complex chalcogenide was discovered and characterized by the combination of TEM and XRD diffraction. It belongs to the A2In12X19 family, crystallizing in the R 3 ̅:H space group. Single crystal X-ray diffraction study led to a refined composition of Tl0.98In13.12Se16.7Te2.3 with cell parameters: a=13.839(5) Å and c=35.18(3) Å. A static disorder is found on one indium site situated in an octahedral environment. The single crystal XRD study is in agreement with TEM analyses in STEM-HAADF image mode that do not show any extended defects or disorder at atomic scale.

Ternary chalcogenides C s 2 Z n 3 S e 4 and C s 2 Z n 3 T e 4 : Potential p -type transparent conducting materials

DOE PAGES

Shi, Hongliang; Saparov, Bayrammurad; Singh, David J.; ...

2014-11-11

Here we report prediction of two new ternary chalcogenides that can potentially be used as p-type transparent conductors along with experimental synthesis and initial characterization of these previously unknown compounds, Cs 2Zn 3Ch 4 (Ch = Se, Te). In particular, the structures are predicted based on density functional calculations and confirmed by experiments. Phase diagrams, electronic structure, optical properties, and defect properties of Cs 2Zn 3Se 4 and Cs 2Zn 3Te 4 are calculated to assess the viability of these materials as p-type TCMs. Cs 2Zn 3Se 4 and Cs 2Zn 3Te 4, which are stable under ambient air, displaymore » large optical band gaps (calculated to be 3.61 and 2.83 eV, respectively) and have small hole effective masses (0.5-0.77 m e) that compare favorably with other proposed p-type TCMs. Defect calculations show that undoped Cs2Zn3Se4 and Cs2Zn3Te4 are p-type materials. However, the free hole concentration may be limited by low-energy native donor defects, e.g., Zn interstitials. Lastly, non-equilibrium growth techniques should be useful for suppressing the formation of native donor defects, thereby increasing the hole concentration.« less

A new generation of alloyed/multimetal chalcogenide nanowires by chemical transformation.

PubMed

Yang, Yuan; Wang, Kai; Liang, Hai-Wei; Liu, Guo-Qiang; Feng, Mei; Xu, Liang; Liu, Jian-Wei; Wang, Jin-Long; Yu, Shu-Hong

2015-11-01

One-dimensional metal chalcogenide nanostructures are important candidates for many technological applications such as photovoltaic and thermoelectric devices. However, the design and synthesis of one-dimensional metal chalcogenide nanostructured materials with controllable components and properties remain a challenge. We report a general chemical transformation process for the synthesis of more than 45 kinds of one-dimensional alloyed/hybrid metal chalcogenide nanostructures inherited from mother template Te x Se y @Se core-shell nanowires with tunable compositions. As many as nine types of monometal chalcogenide alloy nanowires (including AgSeTe, HgSeTe, CuSeTe, BiSeTe, PbSeTe, CdSeTe, SbSeTe, NiSeTe, and CoSeTe) can be synthesized. Alloyed and hybrid nanowires integrated with two or more alloyed metal chalcogenide phases can also be prepared. The compositions of all of these metal chalcogenide nanowires are tunable within a wide range. This protocol provides a new general route for the controllable synthesis of a new generation of one-dimensional metal chalcogenide nanostructures.

Exploring the doping effects of Ag in p-type PbSe compounds with enhanced thermoelectric performance

NASA Astrophysics Data System (ADS)

Wang, Shanyu; Zheng, Gang; Luo, Tingting; She, Xiaoyu; Li, Han; Tang, Xinfeng

2011-11-01

In this study, we prepared a series of Ag-doped PbSe bulk materials by a melting-quenching process combined with a subsequent spark plasma sintering process, and systematically investigated the doping effects of Ag on the thermoelectric properties. Ag substitution in the Pb site does not introduce resonant levels near the valence band edge or detectable change in the density of state in the vicinity of the Fermi level, but moves the Fermi level down and increases the carrier concentration to a maximum value of ~4.7 × 1019 cm-3 which is still insufficient for heavily doped PbSe compounds. Nonetheless, the non-monotonic variation in carrier concentration with increasing Ag content indicates that Ag doping reaches the solution limit at ~1.0% and the excessive Ag presumably acts as donors in the materials. Moreover, the large energy gap of the PbSe-based material wipes off significant 'roll-over' in the Seebeck coefficient at elevated temperatures which gives rise to high power factors, being comparable to p-type Te analogues. Consequently, the maximum ZT reaches ~1.0 for the 1.5% Ag-doped samples with optimized carrier density, which is ~70% improvement in comparison with an undoped sample and also superior to the commercialized p-type PbTe materials.

Liquidus Projections of Bi-Se-Ga and Bi-Se-Te Ternary Systems

NASA Astrophysics Data System (ADS)

Lin, Po-han; Chen, Sinn-wen; Hwang, Jenn-dong; Chu, Hsu-shen

2016-12-01

This study determines the liquidus projections of both Bi-Se-Ga and Bi-Se-Te ternary systems which are constituent ternary systems of promising Bi-Se-Te-Ga thermoelectric materials. Ternary Bi-Se-Ga and Bi-Se-Te alloys are prepared. Their primary solidification phases are experimentally determined, and thermal analysis experiments are carried out. The liquidus projections are determined based on the ternary experimental results and phase diagrams of constituent binary systems. The Bi-Se-Ga system includes seven primary solidification phases, Bi, Ga, GaSe, Ga2Se3, Se, Bi2Se3, and (Bi2)n(Bi2Se3)m. In the Bi-Se-Te system, there are five primary solidification phases, Bi, (Bi2)n(Bi2Te3)m, Bi2(Se,Te)3, (Se,Te), and (Bi2)n(Bi2Se3)m. Both the (Bi2)n(Bi2Te3)m and (Bi2)n(Bi2Se3)m phases are not a single phase, but a collection of series undetermined phases. Large miscibility gaps are observed in the Bi-Se-Ga system. The temperatures of the invariant reactions, Liquid + Bi + GaSe = Ga and Liquid + Ga2Se3 = Bi + GaSe, are at 495 K (222 °C) and 533 K (260 °C), respectively.

Selenium and tellurium nanomaterials

NASA Astrophysics Data System (ADS)

Piacenza, Elena; Presentato, Alessandro; Zonaro, Emanuele; Lampis, Silvia; Vallini, Giovanni; Turner, Raymond J.

2018-04-01

Over the last 40 years, the rapid and exponential growth of nanotechnology led to the development of various synthesis methodologies to generate nanomaterials different in size, shape and composition to be applied in various fields. In particular, nanostructures composed of Selenium (Se) or Tellurium (Te) have attracted increasing interest, due to their intermediate nature between metallic and non-metallic elements, being defined as metalloids. Indeed, this key shared feature of Se and Te allows us the use of their compounds in a variety of applications fields, such as for manufacturing photocells, photographic exposure meters, piezoelectric devices, and thermoelectric materials, to name a few. Considering also that the chemical-physical properties of elements result to be much more emphasized when they are assembled at the nanoscale range, huge efforts have been made to develop highly effective synthesis methods to generate Se- or Te-nanomaterials. In this context, the present book chapter will explore the most used chemical and/or physical methods exploited to generate different morphologies of metalloid-nanostructures, focusing also the attention on the major advantages, drawbacks as well as the safety related to these synthetic procedures.

Lattice vibrational contribution to equation of state for tetrahedral compounds

NASA Astrophysics Data System (ADS)

Kagaya, H.-Matsuo; Kotoku, H.; Soma, T.

1989-02-01

The lattice vibrational contributions to the Helmholtz free energy and the thermal pressure of tetrahedral compounds such as GaP, InP, ZnS, ZnSe, ZnTe and CdTe are investigated from the electronic theory of solids in the dynamical treatment based on our presented binding force. The temperature dependence of Helmholtz free energy and thermal pressure from lattice vibrational term are quantitatively obtained, and vibrational contributions to free energy are small compared with the static crystal energy. The influence of the thermal pressure is important to the equation of state in high temperatures, and the reformulation of the volume scale for the pressure-volume relation is given by considering the thermal pressure.

High surface area graphene-supported metal chalcogenide assembly

DOEpatents

Worsley, Marcus A.; Kuntz, Joshua D.; Orme, Christine A.

2017-04-25

Disclosed here is a method for hydrocarbon conversion, comprising contacting at least one graphene-supported assembly with at least one hydrocarbon feedstock, wherein the graphene-supported assembly comprises (i) a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds and (ii) at least one metal chalcogenide compound disposed on the graphene sheets, wherein the chalcogen of the metal chalcogenide compound is selected from S, Se and Te, and wherein the metal chalcogenide compound accounts for at least 20 wt. % of the graphene-supported assembly.

A new generation of alloyed/multimetal chalcogenide nanowires by chemical transformation

PubMed Central

Yang, Yuan; Wang, Kai; Liang, Hai-Wei; Liu, Guo-Qiang; Feng, Mei; Xu, Liang; Liu, Jian-Wei; Wang, Jin-Long; Yu, Shu-Hong

2015-01-01

One-dimensional metal chalcogenide nanostructures are important candidates for many technological applications such as photovoltaic and thermoelectric devices. However, the design and synthesis of one-dimensional metal chalcogenide nanostructured materials with controllable components and properties remain a challenge. We report a general chemical transformation process for the synthesis of more than 45 kinds of one-dimensional alloyed/hybrid metal chalcogenide nanostructures inherited from mother template TexSey@Se core-shell nanowires with tunable compositions. As many as nine types of monometal chalcogenide alloy nanowires (including AgSeTe, HgSeTe, CuSeTe, BiSeTe, PbSeTe, CdSeTe, SbSeTe, NiSeTe, and CoSeTe) can be synthesized. Alloyed and hybrid nanowires integrated with two or more alloyed metal chalcogenide phases can also be prepared. The compositions of all of these metal chalcogenide nanowires are tunable within a wide range. This protocol provides a new general route for the controllable synthesis of a new generation of one-dimensional metal chalcogenide nanostructures. PMID:26601137

Nuclear medicine technology progress report for quarter ending June 30, 1978. ABELLED COMPOUNDS; PATIENTS; POSITRON SOURCES; CARBON 11; ISOMERIC NUCLEI; LABELLED COMPOUNDS; BIOLOGICAL LOCALIZATION; CHEMICAL PREPARATION; ISOMERIC NUCLEI; LABELLED COMPOUNDS; RATS; CHEMICAL PREPARATION; LABELLED COMPOUNDS; RATS; TISSUE DISTRIBUTION

DOE Office of Scientific and Technical Information (OSTI.GOV)

Knapp, Jr., F. F.

Progress is reported for the applications of /sup 11/C, /sup 195m/Pt, /sup 75/Se, and /sup 123m/Te. Additional human clinical trials with /sup 11/C-DL-tryptophan and /sup 11/C-l-aminocyclobutane carboxylic acid have been completed. The modified Buecherer-Strecker amino acid synthesis has been used to prepare /sup 11/C-DL-phenylglycine and /sup 11/C-DL-phenylalanine. These two new /sup 11/C-labeled amino acids will be studied as potential tumor localizing agents. Preliminary studies concerning the comparative organ and subcellular distribution of /sup 195m/Pt-labeled cis- and trans- dichlorodiamineplatinum(II) have been completed. The results of in vivo studies have shown the cis isomer to bind to nuclear DNA to a significantlymore » greater extent than the trans isomer. A series of /sup 123m/Te-labeled long-chain fatty acid analogs have been prepared as isosteres of unsaturated fatty acids. Several of these compounds show pronounced heart uptake in rats and may represent a new class of potential myocardial imaging agents. Studies on the preparation and tissue distribution of /sup 75/Se-..beta..-aminoethyl selenosulfate continue.« less

High Pressure Superconductivity in Iron Based Layered Compounds Studied using Designer Diamonds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vohra, Yogesh, K.

High pressure superconductivity in Iron based superconductor FeSe0.5Te0.5 has been studied up to 15 GPa and 10 K using an eight probe designer diamond anvil in a diamond anvil cell device. Four probe electrical resistance measurements show onset of superconductivity (Tc) at 14 K at ambient pressure with Tc increasing with increasing pressure to 19 K at a pressure of 3.6 GPa. At higher pressures beyond 3.6 GPa, Tc decreases and extrapolation suggests non superconducting behavior above 10 GPa. This loss of superconductivity coincides with the pressure induced amorphization of Fe(SeTe)4 tetrahedra reported at 11 GPa in x-ray diffraction studiesmore » at ambient temperature.« less

Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Sorokin, S. V.; Sedova, I. V.; Belyaev, K. G.; Rakhlin, M. V.; Yagovkina, M. A.; Toropov, A. A.; Ivanov, S. V.

2018-03-01

Data on the molecular beam epitaxy (MBE) technology, design, and luminescent properties of heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots on InAs(001) substrates are presented. X-ray diffraction has been used to study short-period ZnTe/MgTe/MgSe superlattices used as wide-bandgap barriers in structures with CdTe/ZnTe quantum dots for the effective confinement of holes. It is shown that the design of these superlattices must take into account the replacement of Te atoms by selenium on MgSe/ZnTe and MgTe/MgSe heterointerfaces. Heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots exhibit photoluminescence at temperatures up to 300 K. The spectra of microphotoluminescence at T = 10 K display a set of emission lines from separate CdTe/ZnTe quantum dots, the surface density of which is estimated at 1010 cm-2.

Fermiology and Superconductivity of Topological Surface States in PdTe2

NASA Astrophysics Data System (ADS)

Clark, O. J.; Neat, M. J.; Okawa, K.; Bawden, L.; Marković, I.; Mazzola, F.; Feng, J.; Sunko, V.; Riley, J. M.; Meevasana, W.; Fujii, J.; Vobornik, I.; Kim, T. K.; Hoesch, M.; Sasagawa, T.; Wahl, P.; Bahramy, M. S.; King, P. D. C.

2018-04-01

We study the low-energy surface electronic structure of the transition-metal dichalcogenide superconductor PdTe2 by spin- and angle-resolved photoemission, scanning tunneling microscopy, and density-functional theory-based supercell calculations. Comparing PdTe2 with its sister compound PtSe2 , we demonstrate how enhanced interlayer hopping in the Te-based material drives a band inversion within the antibonding p -orbital manifold well above the Fermi level. We show how this mediates spin-polarized topological surface states which form rich multivalley Fermi surfaces with complex spin textures. Scanning tunneling spectroscopy reveals type-II superconductivity at the surface, and moreover shows no evidence for an unconventional component of its superconducting order parameter, despite the presence of topological surface states.

Low-Cost Lattice Matching Si Based Composite Substrates for HgCdTe

DTIC Science & Technology

2013-09-01

211). ..............................................5 Figure 3. Relationship between calculated alloy compositions based on Se/CdTe BEP ratio and...Se:CdTe beam equivalent pressure ( BEP ) ratios. During CdSeTe growth, Se and Te are in competition for the same nucleation sites. If we assume that all...therefore, x(cal) = ΦSe/ΦCd = 2ΦSe/ΦCdTe, where Φ is the BEP of the material, measured by the nude ion gauge at the substrate position. Figure 3 shows the

Rationally Controlled Synthesis of CdSexTe1-x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells.

PubMed

Wen, Shiya; Li, Miaozi; Yang, Junyu; Mei, Xianglin; Wu, Bin; Liu, Xiaolin; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Xu, Wei; Wang, Dan

2017-11-08

CdSe x Te 1-x semiconductor nanocrystals (NCs), being rod-shaped/irregular dot-shaped in morphology, have been fabricated via a simple hot-injection method. The NCs composition is well controlled through varying molar ratios of Se to Te precursors. Through changing the composition of the CdSe x Te 1-x NCs, the spectral absorption of the NC thin film between 570-800 nm is proved to be tunable. It is shown that the bandgap of homogeneously alloyed CdSe x Te 1-x active thin film is nonlinearly correlated with the different compositions, which is perceived as optical bowing. The solar cell devices based on CdSe x Te 1-x NCs with the structure of ITO/ZnO/CdSe/CdSe x Te 1-x /MoO x /Au and the graded bandgap ITO/ZnO/CdSe( w / o )/CdSe x Te 1-x /CdTe/MoO x /Au are systematically evaluated. It was found that the performance of solar cells degrades almost linearly with the increase of alloy NC film thickness with respect to ITO/ZnO/CdSe/CdSe 0.2 Te 0.8 /MoO x /Au. From another perspective, in terms of the graded bandgap structure of ITO/ZnO/CdSe/CdSe x Te 1-x /CdTe/MoO x /Au, the performance is improved in contrast with its single-junction analogues. The graded bandgap structure is proved to be efficient when absorbing spectrum and the solar cells fabricated under the structure of ITO/ZnO/CdSe 0.8 Te 0.2 /CdSe 0.2 Te 0.8 /CdTe/MoO x /Au indicate power conversion efficiency (PCE) of 6.37%, a value among the highest for solution-processed inversely-structured CdSe x Te 1-x NC solar cells. As the NC solar cells are solution-processed under environmental conditions, they are promising for fabricating solar cells at low cost, roll by roll and in large area.

Systematic research on Ag2X (X = O, S, Se, Te) as visible and near-infrared light driven photocatalysts and effects of their electronic structures

NASA Astrophysics Data System (ADS)

Jiang, Wei; Wu, Zhaomei; Zhu, Yingming; Tian, Wen; Liang, Bin

2018-01-01

Four silver chalcogen compounds, Ag2O, Ag2S, Ag2Se and Ag2Te, can be utilized as visible-light-driven photocatalysts. In this research, the electronic structures of these compounds were analyzed by simulation and experiments to systematically reveal the relationship between photocatalytic performance and energetic structure. All four chalcogenides exhibited interesting photocatalytic activities under ultraviolet, visible and near-infrared light. However, their photocatalytic performances and stability significantly depended on the band gap width, and the valence band and conduct band position, which was determined by their composition. Increasing the X atomic number from O to Te resulted in the upward movement of the valence band top and the conduct band bottom, which resulted in narrower band gaps, a wider absorption spectrum, a weaker photo-oxidization capacity, a higher recombination probability of hole and electron pairs, lower quantum efficiency, and worse stability. Among them, Ag2O has the highest photocatalytic performance and stability due to its widest band gap and lowest position of VB and CB. The combined action of photogenerated holes and different radicals, depending on the different electronic structures, including anion ozone radical, hydroxide radical, and superoxide radical, was observed and understood. The results of experimental observations and simulations of the four silver chalcogen compounds suggested that a proper electronic structure is necessary to obtain a balance between photocatalytic performance and absorbable light region in the development of new photocatalysts.

Thermoelectric Properties of Pulsed Electric Current Sintered Samples of AgPb m SbSe17 ( m = 16 or 17)

NASA Astrophysics Data System (ADS)

Wu, Chun-I.; Todorov, Ilyia; Kanatzidis, Mercouri G.; Timm, Edward; Case, Eldon D.; Schock, Harold; Hogan, Timothy P.

2012-06-01

Lead chalcogenide materials have drawn attention in recent years because of their outstanding thermoelectric properties. Bulk n-type materials of AgPb m SbTe2+ m have been reported to exhibit high figure of merit, ZT, as high as 1.7 at 700 K. Recent reports have shown p-type lead selenide-based compounds with comparable ZT. The analogous material AgPb m SbSe17 shares a similar cubic rock-salt structure with PbTe-based compounds; however, it exhibits a higher melting point, and selenium is more abundant than tellurium. Using solid solution chemistry, we have fabricated cast AgPb15SbSe17 samples that show a peak power factor of approximately 17 μW/cm K2 at 450 K. Increasing the strength of such materials is commonly achieved through powder processing, which also helps to homogenize the source materials. Pulsed electric current sintering (PECS) is a hot-pressing technique that utilizes electric current through the die and sample for direct Joule heating during pressing. The mechanisms present during PECS processing have captured significant research interest and have led to some notable improvements in sample properties compared with other densification techniques. We report the thermoelectric properties of PECS samples of AgPb m SbSe17 along with sample fabrication and processing details.

Structure of Se-Te glasses studied using neutron, X-ray diffraction and reverse Monte Carlo modelling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Itoh, Keiji, E-mail: itoh@okayama-u.ac.jp; Research Reactor Institute, Kyoto University, Kumatori, Osaka 590-0494

Pulsed neutron diffraction and synchrotron X-ray diffraction measurements were performed on Se{sub 100-x}Te{sub x} bulk glasses with x=10, 20, 30 and 40. The coordination numbers obtained from the diffraction results demonstrate that Se and Te atoms are twofold coordinated and the glass structure is formed by the chain network. The three-dimensional structure model for Se{sub 60}Te{sub 40} glass obtained by using reverse Monte Carlo modelling shows that the alternating arrangements of Se and Te atoms compose the major part of the chain clusters but several other fragments such as Se{sub n} chains and Te-Te dimers are also present in largemore » numbers. The chain clusters have geometrically disordered forms and the interchain atomic order is different from those in the crystal structures of trigonal Se and trigonal Te. - Graphical abstract: Coordination environment in Se{sub 60}Te{sub 40} glass.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Charkin, Dmitri O.; Black, Cameron; Downie, Lewis J.

Two new rare-earth – alkali – tellurium oxide halides were synthesized by a salt flux technique and characterized by single-crystal X-ray diffraction. The structures of the new compounds Cs{sub 7}Sm{sub 11}[TeO{sub 3}]{sub 12}Cl{sub 16} (I) and Rb{sub 7}Nd{sub 11}[TeO{sub 3}]{sub 12}Br{sub 16} (II) (both tetragonal, space group I4/mcm) correspond to the sequence of [MLn{sub 11}(TeO{sub 3}){sub 12}] and [M{sub 6}X{sub 16}] layers and bear very strong similarities to those of known selenite analogs. We discuss the trends in similarities and differences in compositions and structural details between the Se and Te compounds; more members of the family are predicted. -more » Graphical abstract: Two new rare-earth – alkali – tellurium oxide halides were predicted and synthesized. - Highlights: • Two new rare-earth – alkali – tellurium oxide halides were synthesized. • They adopt slab structure of rare earth-tellurium-oxygen and CsCl-like slabs. • The Br-based CsCl-like slabs have been observed first in this layered family.« less

RGDS-conjugated CdSeTe/CdS quantum dots as near-infrared fluorescent probe: preparation, characterization and bioapplication

NASA Astrophysics Data System (ADS)

Li, Zhenzhen; Zhang, Qiyi; Huang, Huaying; Ren, Changjing; Pan, Yujin; Wang, Qing; Zhao, Qiang

2016-12-01

In the experiments, high-quality, water-soluble and near-infrared (NIR)-emitting CdSeTe and CdSeTe/CdS quantum dots (QDs) were successfully prepared. The average size of CdSeTe⁄CdS QDs was 7.68 nm and CdSeTe QDs was 4.33 nm. Arginine-glycine-aspartic-serine acid (RGDS) peptides were linked to CdSeTe/CdS QDs by N-(3-(dimethylamino)propyl)-N'-ehtylcarbodiimide hydrochloride (EDC) and N'-hydroxysuccinimide (NHS). The prepared RGDS-tagged NIR CdSeTe/CdS QDs (denoted as RGDS-CdSeTe/CdS) had an average diameter of 24.83 nm and were used for cancer cell immunofluorescence imaging. The characteristics of RGDS-conjugated CdSeTe/CdS such as morphology, structure, spectra, stability, cytotoxicity, and near-infrared microscopic imaging were investigated in detail. HepG2 cells were incubated with the novel fluorescent probe (RGDS-CdSeTe/CdS), which realized immunofluorescence targeting and imaging. The results reported here open up new perspectives for integrin-targeted near-infrared imaging and may aid in tumor detection including imaging-guided surgery.

Nanocrystal growth and morphology of PbTeSe-ZnSe composite thin films prepared by one-step synthesis method

NASA Astrophysics Data System (ADS)

Sato, Kazuhisa; Abe, Seishi

2016-10-01

The microstructure of polycrystalline PbTe1-xSex-ZnSe composite thin films has been studied by scanning transmission electron microscopy and electron diffraction. The films were prepared by the one-step synthesis method using simultaneous evaporation of PbTe and ZnSe. The nanocrystals of PbTe1-xSex are formed in a ZnSe matrix. Tellurium concentration can be tuned by controlling the PbTe evaporation source temperatures between 753 K and 793 K. Binary PbSe nanocrystals were formed at 753 K, while ternary PbTe1-xSex nanocrystals were formed at 793 K. The nanocrystals grow in a granular shape at the initial stage of film growth, and the morphology changes to nanowire-shape as the film grows, irrespective of the Te concentration. The ternary PbTe1-xSex nanocrystals were composed of two phases with different Te concentration; Te-rich (Se-poor) granular crystals were formed near the bottom half parts of the film and Te-poor (Se-rich) nanowires were formed at the upper half parts of the film. Columnar ZnSe crystals contain high-density {111} stacking faults due to the low stacking fault energy of ZnSe. A balance of deposition and re-evaporation on the substrate during the film growth will be responsible for the resultant nanocrystal morphology.

Exploratory Solid-State Synthesis of Uranium Chalcogenides and Mixed Anion Uranium Chalcogenides

NASA Astrophysics Data System (ADS)

Ward, Matthew David

Several uranium chalcogenides and mixed anion uranium chalcogenides have been synthesized by solid-state synthetic methods. Structural determinations were carried out via single-crystal X-ray diffraction. Some of these compounds have been further characterized by magnetic measurements, optical properties measurements, Raman spectroscopy, resistivity measurements, XANES and XPS. Eight compounds of the composition MU8Q17 were synthesized and characterized by single-crystal X-ray diffraction. All of these compounds crystallize in the CrU8S17 structure type. XANES measurements indicate that ScU8S17 contains Sc3+ and must be charge balanced with some amount of U 3+. Two compounds of the composition ATiU3Te9 crystallize as black rectangular plates. From single-crystal magnetic measurements, CsTiU 3Te9 is consistent with antiferromagnetic coupling between magnetic U atoms. The uranium chalcogenide compounds NiUS3 and Cr4US 8 were synthesized from reaction of the elements in various fluxes. NiUS3 crystallizes in the GdFeO3 structure type. Cr 4US8 crystallizes in the orthorhombic space group D - Pnma and its structure is related to that of Li4UF 8. The compounds Rh2U6S15, Cs 2Ti2U6Se15, and Cs2Cr 2U6Se15 crystallize as black prisms in the cubic space group O-Im3m. Magnetic measurements on Cs 2Cr2U6Se15 give a value for the Weiss temperature, θWeiss, of 57.59 K, indicative of ferromagnetic coupling. Black plates of CsScU(Se2)Se3 were synthesized from the reaction of the elements in a CsCl flux. CsScU(Se2)Se 3 crystallizes in the orthorhombic space group D- Cmcm . Magnetic susceptibility measurements on CsScU(Se2)Se 3 indicate three regions of magnetic response. The uranium double salt Cs5[U2(μ-S 2)2Cl8]I crystallizes as red plates. Cs 5[U2(μ-S2)2Cl 8]I displays optical anisotropy with band gap energies of 1.99 eV and 2.08 eV along the [001] and [100] polarizations. The uranium oxychalcogenides U7O2Se12 and Na2Ba2(UO2)S4 were synthesized by intentional oxygen contamination. The structure of U7O 2Se12 is related to the previously reported U7Q 12. Na2Ba2(UO2)S4 contains isolated uranyl polyhedra in which each uranium atom may be assigned an oxidation state of +6. The four uranium(IV) chlorophosphates, UCl4(POCl3), [U2Cl9][PCl4], UCl3(PO2Cl 2), and U2Cl8(POCl3) were synthesized in an effort to synthesize new novel uranyl sulfides. All are unstable, but UCl4(POCl3) is the thermodynamically favorable phase.

Electrochemical photovoltaic cell having ternary alloy film

DOEpatents

Russak, Michael A.

1984-01-01

A thin film compound semiconductor electrode comprising CdSe.sub.1-x Te.sub.x (0.ltoreq.x.ltoreq.1) is deposited on a transparent conductive substrate. An electrolyte contacts the film to form a photoactive site. The semiconductor material has a narrow energy bandgap permitting high efficiency for light conversion. The film may be fabricated by: (1) co-evaporation of two II-VI group compounds with a common cation, or (2) evaporation of three elements, concurrenty.

Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

DOEpatents

Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

2001-01-01

The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

Magnetic behavior of Fe(Se,Te) systems: First-principles calculations

NASA Astrophysics Data System (ADS)

Shi, Hongliang; Huang, Zhong-Bing; Tse, John S.; Lin, Hai-Qing

2011-08-01

The magnetic behaviors in Fe(Se,Te) systems have been investigated systematically using density functional calculations. At the experimental lattice parameters, the ground state is found to be in the double stripe magnetic phase for FeTe but in the single stripe magnetic phase for FeSe and FeSe0.5Te0.5, and there is no preference in the different easy axes of magnetization. Substitution of Se by Te enlarges the size of the Fermi surface in FeSe0.5Te0.5, resulting in a stronger nesting effect and thus enhancing the superconductivity. It is found that the double stripe order in FeTe1-xSex changes to the single stripe order when x > 0.18. Spiral calculations on FeSe0.5Te0.5 show that the lowest energy is at the commensurate point Q→= (0.5,0.5), accompanied by additional local minima at two incommensurate points near Q→= (0.5,0.5). This observation is consistent with the experimentally observed positions of low energy magnetic excitations. Geometry optimization calculations show that the tetragonal cell relaxes to orthorhombic and monoclinic cells for FeSe and FeTe, respectively, but remains unchanged for FeSe0.5Te0.5.

Structural and compositional dependence of the CdTexSe 1-x alloy layer photoactivity in CdTe-based solar cells

DOE PAGES

Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; ...

2016-07-27

The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTe xSe 1₋x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTe xSe 1₋x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTe xSe 1₋xmore » alloy with respect to the degree of Se diffusion. Finally, the results show that the CdTe xSe 1₋x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.« less

Normal state above the upper critical field in Fe 1 + y Te 1 - x ( Se , S ) x

DOE PAGES

Wang, Aifeng; Kampert, Erik; Saadaoui, H.; ...

2017-05-03

Here, we have investigated the magnetotransport above the upper critical field ( H c 2 ) in Fe 1.14 Te 0.7 Se 0.3 , Fe 1.02 Te 0.61 Se 0.39 , Fe 1.05 Te 0.89 Se 0.11 , and Fe 1.06 Te 0.86 S 0.14 . The μ SR measurements confirm electronic phase separation in Fe 1.06 Te 0.86 S 0.14 , similar to Fe 1 + y Te 1 - x Se x . We found that superconductivity is suppressed in high magnetic fields above 60 T, allowing us to gain insight into the normal-state properties below the zero-fieldmore » superconducting transition temperature ( T c ). We also show that the resistivity of Fe 1.14 Te 0.7 Se 0.3 and Fe 1.02 Te 0.61 Se 0.39 above H c 2 is metallic as T → 0 , just like the normal-state resistivity above T c . On the other hand, the normal-state resistivity in Fe 1.05 Te 0.89 Se 0.11 and Fe 1.06 Te 0.86 S 0.14 is nonmetallic down to lowest temperatures, reflecting the superconductor-insulator transition due to electronic phase separation.« less

Role of chalcogen vapor annealing in inducing bulk superconductivity in Fe1 +yTe1 -xSex

NASA Astrophysics Data System (ADS)

Lin, Wenzhi; Ganesh, P.; Gianfrancesco, Anthony; Wang, Jun; Berlijn, Tom; Maier, Thomas A.; Kalinin, Sergei V.; Sales, Brian C.; Pan, Minghu

2015-02-01

Recent investigations have shown that Fe1 +yTe1 -xSex can be made superconducting by annealing it in Se and O vapors. The current lore is that these chalcogen vapors induce superconductivity by removing the magnetic excess Fe atoms. To investigate this phenomenon, we performed a combination of magnetic susceptibility, specific heat, and transport measurements together with scanning tunneling microscopy and spectroscopy and density functional theory calculations on Fe1 +yTe1 -xSex treated with Te vapor. We conclude that the main role of the Te vapor is to quench the magnetic moments of the excess Fe atoms by forming FeTem (m ≥1 ) complexes. We show that the remaining FeTem complexes are still damaging to the superconductivity and therefore that their removal potentially could further improve superconductive properties in these compounds.

Synthesis, crystal structure, and electrical and magnetic properties of BaMo{sub 6}Te{sub 6}: A novel reduced molybdenum telluride containing infinite chains of trans-face shared Mo{sub 6} octahedra

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gall, Philippe; Guizouarn, Thierry; Potel, Michel

Powder samples and single crystals of the new ternary compound BaMo{sub 6}Te{sub 6} were obtained by solid state reaction. The structure was determined by single-crystal X-ray diffraction. BaMo{sub 6}Te{sub 6} crystallizes in the hexagonal space group P6{sub 3}/m (No. 176) with unit-cell parameters a=9.3941(2) Å, c=4.5848(1) Å and Z=1. Full-matrix least-squares refinement on F{sup 2} using 452 independent reflections for 17 refinable parameters resulted in R1=0.0208 and wR2=0.0539. The structure consists of one-dimensional infinite chains of trans-face shared Mo{sub 6} octahedra capped by Se atoms. These chains that are running along the c axis are separated from each other bymore » nine-coordinate Ba atoms. Resistivity measurements on a single crystal indicated that the BaMo{sub 6}Te{sub 6} compound is metallic down to 160 K and semiconductor below. Magnetic susceptibility measurements showed that BaMo{sub 6}Te{sub 6} is weakly diamagnetic with no anomaly at the metal–semiconductor transition. - Graphical abstract: We present here the synthesis, the crystal structure, and the electrical and magnetic properties of the new compound BaMo{sub 6}Te{sub 6} containing infinite chains of trans-face shared Mo{sub 6} octahedra. - Highlights: • BaMo{sub 6}Te{sub 6} contains infinite chains of trans-face-sharing Mo{sub 6} octahedra |Mo{sub 6/2}|{sub ∞}{sup 1}. • Synthesis by solid state reaction. • Single-crystal X-ray study. • Continuous metal–nonmetal transition. • Anderson localization.« less

Lag and light-transfer characteristics of amorphous selenium photoconductive film with tellurium-doped layer

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2016-07-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) films have been used for highly sensitive imaging devices. To study a-Se HARP films for a solid-state image sensor, current-voltage, lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films are investigated. Also, to clarify a suitable Te-doped a-Se layer thickness in the a-Se photoconductor, we considered the effects of Te-doped layer thickness on the lag, spectral response, and light-transfer characteristics of 0.4-µm-thick a-Se HARP films. The threshold field, at which avalanche multiplication occurs in the a-Se HARP targets, decreases when the Te-doped layer thickness increases. The lag of 0.4-µm-thick a-Se HARP targets with Te-doped layers is higher than that of the target without Te doping. The lag of the targets with Te-doped layers is caused by the electrons trapped in the Te-doped layers within the 0.4-µm-thick a-Se HARP films. From the results of the spectral response measurement of about 15 min, the 0.4-µm-thick a-Se HARP targets with Te-doped layers of 90 and 120 nm are observed to be unstable owing to the electrons trapped in the Te-doped a-Se layer. From the light-transfer characteristics of 0.4-µm-thick a-Se HARP targets, as the slope at the operating point of signal current-voltage characteristics in the avalanche mode increases, the γ of the a-Se HARP targets decreases. Considering the effects of dark current on the lag and spectral response characteristics, a Te-doped layer of 60 nm is suitable for 0.4-µm-thick a-Se HARP films.

Can high pressure I-II transitions in semiconductors be affected by plastic flow and nanocrystal precipitation in phase I?

NASA Astrophysics Data System (ADS)

Weinstein, B. A.; Lindberg, G. P.

Pressure-Raman spectroscopy in ZnSe and ZnTe single crystals reveals that Se and Te nano-crystals (NCs) precipitate in these II-VI hosts for pressures far below their I-II phase transitions. The inclusions are evident from the appearance and negative pressure-shift of the A1 Raman peaks of Se and Te (trigonal phase). The Se and Te NCs nucleate at dislocations and grain boundaries that arise from pressure-induced plastic flow. This produces chemical and structural inhomogeneities in the zincblende phase of the host. At substantially higher pressures, the I-II transition proceeds in the presence of these inhomogenities. This can affect the transition's onset pressure Pt and width ΔPt, and the occurrence of metastable phases along the transition path. Precipitation models in metals show that nucleation of inclusions depends on the Peierls stress τp and a parameter α related to the net free energy gained on nucleation. For favorable values of τp and α, NC precipitation at pressures below the I-II transition could occur in other compounds. We propose criteria to judge whether this is likely based on the observed ranges of τp in the hosts, and estimates of α derived from the cohesive energy densities of the NC materials. One finds trends that can serve as a useful guide, both to test the proposed criteria, and to decide when closer scrutiny of phase transition experiments is warranted, e.g., in powders where high dislocation densities are initially created

Hypo-electronic triple-decker sandwich complexes: synthesis and structural characterization of [(Cp*Mo)2{μ-η(6):η(6)-B4H4E-Ru(CO)3}] (E = S, Se, Te or Ru(CO)3 and Cp* = η(5)-C5Me5).

PubMed

Mondal, Bijan; Bhattacharyya, Moulika; Varghese, Babu; Ghosh, Sundargopal

2016-07-05

The syntheses and structural characterization of hypo-electronic di-molybdenum triple-decker sandwich clusters are reported. Thermolysis of [Ru3(CO)12] with an in situ generated intermediate obtained from the reaction of [Cp*MoCl4] with [LiBH4·THF] yielded an electron deficient triple-decker sandwich complex, [(Cp*Mo)2{μ-η(6):η(6)-B4H4Ru2(CO)6}], . In an effort to generate analogous triple-deckers containing group-16 elements, we isolated [(Cp*Mo)2{μ-η(6):η(6)-B4H4ERu(CO)3}] (: E = Te; : E = S; : E = Se). These clusters show a high metal coordination number and cross cluster Mo-Mo bond. The formal cluster electron count of these compounds is four or three skeletal electron pairs less than required for a canonical closo-structure of the same nuclearity. Therefore, these compounds represent a novel class of triple-decker sandwich complex with 22 or 24 valence-electrons (VE), wherein the "chair" like hexagonal middle ring is composed of B, Ru and chalcogen. One of the key differences among the synthesized triple-decker molecules is the puckering nature of the middle ring [B4RuE], which increases in the order S < Se < Ru(CO)3 < Te. In addition, Fenske-Hall and quantum-chemical calculations with DFT methods at the BP86 level of theory have been used to analyze the bonding of these novel complexes. The studies not only explain the electron unsaturation of the molecules, but also reveal the reason for the significant puckering of the middle deck. All the compounds have been characterized by IR, (1)H, (11)B, and (13)C NMR spectroscopy in solution and the solid state structures were established by crystallographic analysis.

Fe-Cluster Compounds of Chalcogenides: Candidates for Rare-Earth-Free Permanent Magnet and Magnetic Nodal-Line Topological Material.

PubMed

Zhao, Xin; Wang, Cai-Zhuang; Kim, Minsung; Ho, Kai-Ming

2017-12-04

Fe-cluster-based crystal structures are predicted for chalcogenides Fe 3 X 4 (X = S, Se, Te) using an adaptive genetic algorithm. Topologically different from the well-studied layered structures of iron chalcogenides, the newly predicted structures consist of Fe clusters that are either separated by the chalcogen atoms or connected via sharing of the vertex Fe atoms. Using first-principles calculations, we demonstrate that these structures have competitive or even lower formation energies than the experimentally synthesized Fe 3 X 4 compounds and exhibit interesting magnetic and electronic properties. In particular, we show that Fe 3 Te 4 can be a good candidate as a rare-earth-free permanent magnet and Fe 3 S 4 can be a magnetic nodal-line topological material.

Origin of the emergence of higher T c than bulk in iron chalcogenide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, Sehun; Kang, Jong-Hoon; Oh, Myeong Jun

Fabrication of epitaxial FeSe xTe 1-x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (T c) by more than ~40% than their bulk T c. Intriguingly, T c enhancement in FeSe xTe 1-x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for T c enhancement have been reported, but they remain controversial in universally explaining the T c improvement in the FeSe xTe 1-x films. In this report, we demonstrate that the controversies over the mechanism of T c enhancement are due to the abnormalmore » changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported T c enhancement in FeSe 0.5Te 0.5 thin films is caused by a remarkable increase of Se content. Although our FeSe xTe 1-x thin films were fabricated via PLD using a Fe 0.94Se 0.45Te 0.55 target, the precisely measured composition indicates a Se-rich FeSe xTe 1-x (0.6 < x < 0.8) as ascertained through accurate compositional analysis by both wavelength dispersive spectroscopy (WDS) and Rutherford backscattering spectrometry (RBS). We suggest that the origin of the abnormal composition change is the difference in the thermodynamic properties of ternary FeSe xTe 1-x, based on first principle calculations.« less

Origin of the emergence of higher T c than bulk in iron chalcogenide thin films

DOE PAGES

Seo, Sehun; Kang, Jong-Hoon; Oh, Myeong Jun; ...

2017-08-30

Fabrication of epitaxial FeSe xTe 1-x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (T c) by more than ~40% than their bulk T c. Intriguingly, T c enhancement in FeSe xTe 1-x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for T c enhancement have been reported, but they remain controversial in universally explaining the T c improvement in the FeSe xTe 1-x films. In this report, we demonstrate that the controversies over the mechanism of T c enhancement are due to the abnormalmore » changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported T c enhancement in FeSe 0.5Te 0.5 thin films is caused by a remarkable increase of Se content. Although our FeSe xTe 1-x thin films were fabricated via PLD using a Fe 0.94Se 0.45Te 0.55 target, the precisely measured composition indicates a Se-rich FeSe xTe 1-x (0.6 < x < 0.8) as ascertained through accurate compositional analysis by both wavelength dispersive spectroscopy (WDS) and Rutherford backscattering spectrometry (RBS). We suggest that the origin of the abnormal composition change is the difference in the thermodynamic properties of ternary FeSe xTe 1-x, based on first principle calculations.« less

TeX4 (X = F, Cl, Br) as Lewis acids--complexes with soft thio- and seleno-ether ligands.

PubMed

Hector, Andrew L; Jolleys, Andrew; Levason, William; Reid, Gillian

2012-08-28

TeF(4) reacts with OPR(3) (R = Me or Ph) in anhydrous CH(2)Cl(2) to give the colourless, square based pyramidal 1 : 1 complexes [TeF(4)(OPR(3))] only, in which the OPR(3) is coordinated basally in the solid state, (R = Me: d(Te-O) = 2.122(2) Å; R = Ph: d(Te-O) = 2.1849(14) Å). Variable temperature (19)F{(1)H}, (31)P{(1)H} and (125)Te{(1)H} NMR spectroscopic studies strongly suggest this is the low temperature structure in solution, although the systems are dynamic. The much softer donor ligands SMe(2) and SeMe(2) show a lower affinity for TeF(4), although unstable, yellow products with spectroscopic features consistent with [TeF(4)(EMe(2))] are obtained by the reaction of TeF(4) in neat SMe(2) or via reaction in CH(2)Cl(2) with SeMe(2). TeX(4) (X = F, Cl or Br) causes oxidation and halogenation of TeMe(2) to form X(2)TeMe(2). The Br(2)TeMe(2) hydrolyses in trace moisture to form [BrMe(2)Te-O-TeMe(2)Br], the crystal structure of which has been determined. TeX(4) (X = Cl or Br) react with the selenoethers SeMe(2), MeSe(CH(2))(3)SeMe or o-C(6)H(4)(SeMe)(2) (X = Cl) in anhydrous CH(2)Cl(2) to give the distorted octahedral monomers trans-[TeX(4)(SeMe(2))(2)], cis-[TeX(4){MeSe(CH(2))(3)SeMe}] and cis-[TeCl(4){o-C(6)H(4)(SeMe)(2)}], which have been characterised by IR, Raman and multinuclear NMR ((1)H, (77)Se{(1)H} and (125)Te{(1)H}) spectroscopy, and via X-ray structure determinations of representative examples. Tetrahydrothiophene (tht) can form both 1 : 1 and 1 : 2 Te : L complexes. For X = Br, the former has been shown to be a Br-bridged dimer, [Br(3)(tht)Te(μ-Br)(2)TeBr(3)(tht)], by crystallography with the tht ligands anti, whereas the latter are trans-octahedral monomers. Like its selenoether analogue, MeS(CH(2))(3)SMe forms distorted octahedral cis-chelates, [TeX(4){MeS(CH(2))(3)SMe}], whereas the more rigid o-C(6)H(4)(SMe)(2) unexpectedly forms a zig-zag chain polymer in the solid state, [TeCl(4){o-C(6)H(4)(SMe)(2)}](n), in which the dithioether adopts an extremely unusual bridging mode. This is in contrast to the chelating monomer, cis-[TeCl(4){o-C(6)H(4)(SeMe)(2)}], formed with the analogous selenoether and may be attributed to small differences in the ligand chelate bite angles. The wider bite angle xylyl-linked bidentates, o-C(6)H(4)(CH(2)EMe(2))(2) behave differently; the thioether forms cis-chelated [TeX(4){o-C(6)H(4)(CH(2)SMe)(2)}] confirmed crystallographically, whereas the selenoether undergoes C-Se cleavage and rearrangement on treatment with TeX(4), forming the cyclic selenonium salts, [C(9)H(11)Se](2)[TeX(6)]. The tetrathiamacrocycle, [14]aneS(4) (1,4,8,11-tetrathiacyclotetradecane), does not react cleanly with TeCl(4), but forms the very poorly soluble [TeCl(4)([14]aneS(4))](n), shown by crystallography to be a zig-zag polymer with exo-coordinated [14]aneS(4) units linked via alternate S atoms to a cis-TeCl(4) unit. Trends in the (125)Te{(1)H} NMR shifts for this series of Te(IV) halides chalcogenoether complexes are discussed.

Computational identification of promising thermoelectric materials among known quasi-2D binary compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorai, Prashun; Toberer, Eric S.; Stevanović, Vladan

Quasi low-dimensional structures are abundant among known thermoelectric materials, primarily because of their low lattice thermal conductivities. In this work, we have computationally assessed the potential of 427 known binary quasi-2D structures in 272 different chemistries for thermoelectric performance. To assess the thermoelectric performance, we employ an improved version of our previously developed descriptor for thermoelectric performance [Yan et al., Energy Environ. Sci., 2015, 8, 983]. The improvement is in the explicit treatment of van der Waals interactions in quasi-2D materials, which leads to significantly better predictions of their crystal structures and lattice thermal conductivities. The improved methodology correctly identifiesmore » known binary quasi-2D thermoelectric materials such as Sb2Te3, Bi2Te3, SnSe, SnS, InSe, and In2Se3. As a result, we propose candidate quasi-2D binary materials, a number of which have not been previously considered for thermoelectric applications.« less

Photo- and Thermo-Induced Changes in Optical Constants and Structure of Thin Films from GeSe2-GeTe-ZnTe System

NASA Astrophysics Data System (ADS)

Petkov, Kiril; Todorov, Rossen; Vassilev, Venceslav; Aljihmani, Lilia

We examined the condition of preparation of thin films from GeSe2-GeTe-ZnTe system by thermal evaporation and changes in their optical properties after exposure to light and thermal annealing. The results for composition analysis of thin films showed absence of Zn independently of the composition of the bulk glass. By X-ray diffraction (XRD) analysis it was found that a reduction of ZnTe in ZnSe in bulk materials takes of place during the film deposition. A residual from ZnSe was observed in the boat after thin film deposition. Optical constants (refractive index, n and absorption coefficient, α) and thickness, d as well as the optical band gap, Eg, depending of the content of Te in ternary Ge-Se-Te system are determined from specrophotometric measurements in the spectral range 400-2500 nm applying the Swanepoel's envelope method and Tauc's procedure. With the increase of Te content in the layers the absorption edge is shifted to the longer wavelengths, refractive index increases while the optical band gap decreases from 2.02 eV for GeSe2 to 1.26 eV for Ge34Se42Te24. The values of the refractive index decrease after annealing of all composition and Eg increase, respectively. Thin films with composition of Ge27Se47Te9Zn17 and Ge28Se49Te10Zn13 were prepared by co-evaporation of (GeSe2)78(GeTe)22 and Zn from a boat and a crucible and their optical properties, surface morphology and structure were investigated. The existence of a correlation between the optical band gap and the copostion of thin films from the system studied was demonstrated.

Synthesis and characteristics of PbTe1-xSex thin films formed via electrodeposition

NASA Astrophysics Data System (ADS)

Bae, Sangwoo; Lee, Sangwon; Sohn, Ho-Sang; Lee, Ho Seong

2017-09-01

PbTe1-xSex films were grown using electrodeposition and their microstructural and electrical properties were investigated. The Se content incorporated in the PbTe1-xSex films increased with the Se content in the electrolyte. X-ray diffraction peaks of the PbTe1-xSex films shifted to higher angles according to Vegard's law. For the sample with a small Se content, the PbTe1-xSex films showed a characteristic feather-like dendrite, while PbTe1-xSex films with a higher Se content showed faceted particles. Transmission electron microscopy results showed that the feather-like dendritic PbTe1-xSex grew like a single crystal and a growing twinning was formed in some dendrites. With an increase in the Se content in the PbTe1-xSex thin films, the carrier concentrations increased but the mobility reduced. Electrical conductivity of the PbTe1-xSex thin films increased and then slightly decreased with increasing Se content.

Wide emission-tunable CdTeSe/ZnSe/ZnS core–shell quantum dots and their conjugation with E. coli O-157

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Haifeng; Zhou, Guangjun, E-mail: gjzhou@sdu.edu.cn; Zhou, Juan

2015-05-15

Highlights: • QDs with variety morphology were obtained via an injection controlled process. • 3-D PL spectra of core–shell QDs show different excitation wavelength dependence. • The PL intensity of QDs with ZnSe transition layer increases dramatically. • Core–shell QDs were processed into aqueous phase and conjugated with E. coli O-157. - Abstract: Wide emission-tunable and different morphological alloyed CdTeSe quantum dots (QDs), CdTeSe/ZnS and CdTeSe/ZnSe/ZnS core–shell QDs were successfully synthesized via an injection controlled process. The effect of injection procedure and reaction temperature were systematically discussed and the growth mechanism was proposed. Most efficient PL wavelength was correlated withmore » reaction time and temperature. The 3-D PL spectra of spherical bare CdTeSe and core–shell QDs with different passivation showed different excitation wavelength dependency. The PL intensity of CdTeSe/ZnSe/ZnS core–shell QDs increased greatly in comparison with that of CdTeSe and CdTeSe/ZnSe QDs. ZnSe transition layer played an important role in improving the PL intensity by providing a smoothened interface and gradient band offsets. The core–shell QDs were transferred into aqueous phase and successfully conjugated with Escherichia coli O-157. The proposed phase-transfer and bio-labeling strategy may be applicable to various QDs with different compositions.« less

Theoretical and experimental studies on wide-band-gap p-type conductive BaCuSeF and related compounds

NASA Astrophysics Data System (ADS)

Sakakima, Hiroshi; Nishitani, Mikihiko; Yamamoto, Koichi; Wada, Takahiro

2015-08-01

BaCuSeF and related compounds, MCuQF (M = Ba, Sr; Q = Se, S), are known to show p-type conduction. The formation energies of the Cu vacancy ΔH[VCu] in a MCuQF system were computed by first-principles calculation with a generalized gradient approximation (GGA) of the Perdew-Burke-Ernzerhof (PBE) functional as an electron exchange and correlation functional. The density of states (DOS) of BaCuSeF was calculated with the hybrid functional of Heyd-Scuseria-Ernzerhof (HSE) 06. ΔH[VCu] was found to be very small under both the Cu- and Q-rich conditions, which probably contributes to p-type conduction. The electronic structure of BaCuSeF was studied by X-ray photoelectron spectroscopy (XPS) with UV photoelectron yield spectroscopy (UVPYS) and photoemission yield spectroscopy (PYS). The determined depth of the top of the valence band relative to the vacuum level was about 4.9 eV. This value is desirable for applications in compound semiconductor thin-film tandem solar cells since the absorbers of polycrystalline thin-film solar cells, such as CdTe and Cu(In,Ga)Se2, are p-type semiconductors. The DOS of BaCuSeF calculated with the HSE06 functional was almost consistent with the XPS spectrum.

Electrodeposition of Ni on Bi2Te3 and Interfacial Reaction Between Sn and Ni-Coated Bi2Te3

NASA Astrophysics Data System (ADS)

Tseng, Yu-Chen; Lee, Hsuan; Hau, Nga Yu; Feng, Shien-Ping; Chen, Chih-Ming

2018-01-01

Bismuth-telluride (Bi2Te3)-based compounds are common thermoelectric materials used for low-temperature applications, and nickel (Ni) is usually deposited on the Bi2Te3 substrates as a diffusion barrier. Deposition of Ni on the p-type (Sb-doped) and n-type (Se-doped) Bi2Te3 substrates using electroplating and interfacial reactions between Sn and Ni-coated Bi2Te3 substrates are investigated. Electrodeposition of Ni on different Bi2Te3 substrates is characterized based on cyclic voltammetry and Tafel measurements. Microstructural characterizations of the Ni deposition and the Sn/Ni/Bi2Te3 interfacial reactions are performed using scanning electron microscopy. A faster growth rate is observed for the Ni deposition on the n-type Bi2Te3 substrate which is attributed to a lower activation energy of reduction due to a higher density of free electrons in the n-type Bi2Te3 material. The common Ni3Sn4 phase is formed at the Sn/Ni interfaces on both the p-type and n-type Bi2Te3 substrates, while the NiTe phase is formed at a faster rate at the interface between Ni and n-type Bi2Te3 substrates.

Comment on "A non-primitive origin of near-chondritic Ssbnd Sesbnd Te ratios in mantle peridotites: Implications for the Earth's late accretionary history" by König S. et al. [Earth Planet. Sci. Lett. 385 (2014) 110-121

NASA Astrophysics Data System (ADS)

Wang, Zaicong; Becker, Harry

2015-05-01

The abundances and ratios of S, Se and Te in rocks from the Earth's mantle may yield valuable constraints on the partitioning of these chalcophile elements between the mantle and basaltic magmas and on the compositions of these elements in the primitive mantle (PM) (e.g. Wang and Becker, 2013). Recently, König et al. (2014) proposed a model in which the CI chondrite-like Se/Te of mantle lherzolites (Se /Te = 8 ± 2, 1σ) are explained by mixing of sulfide melts with low Se/Te with harzburgites containing supposedly residual sulfides with high Se/Te. In this model sulfide melts and platinum group element (PGE) rich telluride phases with low Se/Te are assumed to have precipitated during refertilization of harzburgites by basic melts to form lherzolites. Because of the secondary nature of these re-enrichment processes, the authors state that abundances and ratios of S, Se and Te in fertile lherzolites cannot reflect the composition of the PM.

Laser induced Te diffusion in amorphous As50Se50 thin films probed by FTIR and XPS

NASA Astrophysics Data System (ADS)

Behera, Mukta; Panda, Rozalin; Naik, Ramakanta

2017-05-01

In the present report, we have demonstrated the combine effect of deposition and photo diffusion of Te into As50Se50 chalcogenide thin films. The influence of Te deposition onto As50Se50 layer has modified the optical parameters. The thermally evaporated Te/As50Se50 bilayer film is irradiated with near bandgap laser light. The optical and structural property of Te/As50Se50 bilayer film under the influence of laser irradiation has been investigated by X-ray photo electron spectroscopy and Fourier transform infrared spectroscopy. The As3d, Se3d and Te4d core level peaks of the photo diffused film show significant changes in shape and position in comparisons with those obtained for non irradiated films. The extensive analysis by deconvoluting the spectra shows the Te diffusion into As50Se50 matrix by forming Te-As-Se layer. The optical band gap of the diffused region is found to be decreased with the increase of density of states in the band edge. The change in transmissivity and absorption coefficient modified the optical constants which is discussed in the light of the present result.

Highly Enhanced Fluorescence of CdSeTe Quantum Dots Coated with Polyanilines via In-Situ Polymerization and Cell Imaging Application.

PubMed

Xue, Jingjing; Chen, Xinyi; Liu, Shanglin; Zheng, Fenfen; He, Li; Li, Lingling; Zhu, Jun-Jie

2015-09-02

The polyaniline (PAN)-coated CdSeTe quantum dots (QDs) were prepared by in situ polymerization of aniline on the surface of CdSeTe QDs. The PAN-coated CdSeTe QDs has a tremendously enhanced fluorescence (∼40 times) and improved biocompatibility compared to the uncoated CdSeTe QDs. The fluorescence intensity of the PAN-coated CdSeTe QDs can be adjusted by controlling the construction parameters of the PAN shell. The kinetics of the in situ controllable polymerization process was studied by varying the temperature, and the apparent activation energy of polymerization was estimated. With the same method, a series of the PAN derivatives were also tested to coat the CdSeTe QDs in this study. All the QDs showed a significant enhancement of the fluorescence intensity and better biocompatibility. The significantly enhanced fluorescence can provide highly amplified signal for luminescence-based cell imaging.

Hc2(0) and the Kondo Effect in FeSe0.1Te0.9 Epitaxial Films

NASA Astrophysics Data System (ADS)

Cornell, Nicholas; Zakhidov, Anvar; Jaime, Marcelo; Huang, Jijie; Wang, Hayan; Salamon, Myron

2015-03-01

High-quality, [001]-oriented epitaxial films of FeSe0.1Te0.9 have been grown on SrTiO3. They are found to have increased critical temperatures and critical fields relative to both bulk samples and thin films of the sister compound, FeSe0.5Te0.5. Critical field values in excess of 114 T have been reported based on WHH theory. In addition to these improved properties, most samples show resistance minima above Tc, reminiscent of the Kondo effect, presumably from excess Fe. We report results of a high field investigation of these thin films that reveals an empirical zero-temperature value of Hc2(0) ~ 46 T along [001], significantly less than the WHH estimate, but still exceeding the maximum strong coupling correction to the Pauli limit. Large negative magnetoresistance above the critical field confirms the presence of Kondo behavior in the normal state and persists without saturation up to 60 T. Why the measured critical field exceeds the paramagnetic limit remains a question. However, a Kondo temperature that exceeds the superconducting Tc can lead to overestimated WHH upper critical fields and could explain the wide variation in Tc and Hc2 among the ``11'' iron chalcogenides.

Comparison of Ab initio Low-Energy Models for LaFePO, LaFeAsO, BaFe2As2, LiFeAs, FeSe, and FeTe

NASA Astrophysics Data System (ADS)

Nakamura, Kazuma; Miyake, Takashi; Arita, Ryotaro; Imada, Masatoshi

2010-03-01

We present effective low-energy models for LaFePO and LaFeAsO (1111 family), BaFe2As2 (122), LiFeAs (111), and FeSe and FeTe (11) [1], based on ab initio downfolding scheme, a constrained random-phase-approximation method combined with maximally localized Wannier functions. Comparison among the effective models, derived for 5 Fe-3d bands, provides a basis for interpreting physics/chemistry; material dependences of electron correlations, a multiband character entangled by the 3d orbitals, and the geometrical frustration depending on hybridizations between iron and pnictogen/chalcogen orbitals. We found that LaFePO in the 1111 family resides in the weak correlation regime, while LaFeAsO and 111/122 compounds are the intermediate region and FeSe and FeTe in the 11 family are located in the strong correlation regime. A principal parameter relevant to the physics is clarified to be the pnictogen/chalcogen height from the iron layer. Implications in low-energy properties including magnetism and superconductivity are discussed. [1] T. Miyake, K. Nakamura, R. Arita, and M. Imada, arXiv:0911.3705.

Simultaneous speciation of inorganic arsenic, selenium and tellurium in environmental water samples by dispersive liquid liquid microextraction combined with electrothermal vaporization inductively coupled plasma mass spectrometry.

PubMed

Liu, Ying; He, Man; Chen, Beibei; Hu, Bin

2015-09-01

A new method based on dispersive liquid liquid microextraction (DLLME) combined with electrothermal vaporization inductively coupled plasma mass spectrometry (ETV-ICP-MS) was developed for the simultaneous speciation of inorganic arsenic (As), selenium (Se) and tellurium (Te) with sodium diethyldithiocarbamate (DDTC) as both chelating reagent and chemical modifier. As(III), Se(IV) and Te(IV) were transformed into DDTC-chelates at pH 7 and extracted into the fine droplets formed by injecting the binary solution of bromobenzene (extraction solvent) and methanol (dispersive solvent) into the sample solution. After phase separation by centrifugation, As(III), Se(IV) and Te(IV) preconcentrated in the organic phase were determined by ETV-ICP-MS. Total inorganic As, Se and Te were obtained by reducing As(V), Se(VI) and Te(VI) to As(III), Se(IV) and Te(IV) with L-cysteine, which were then subjected to the same DLLME-ETV-ICP-MS process. The concentration of As(V), Se(VI), Te(VI) were calculated by subtracting the concentration of As(III), Se(IV) and Te(IV) from the total inorganic As, Se and Te, respectively. The main factors affecting the microextraction efficiency and the vaporization behavior of target species were investigated in detail. Under the optimal conditions, the limits of detection were 2.5, 8.6 and 0.56 ng L(-1) for As(III), Se(IV) and Te(IV), respectively, with the relative standard deviations (n=7) of 8.5-9.7%. The developed method was applied to the speciation of inorganic As, Se and Te in Certified Reference Materials of GSBZ50004-88, GBW(E)080395 and GBW(E)080548 environmental waters, and the determined values are in good agreement with the certified values. The method was also successfully applied to the simultaneous speciation of inorganic As, Se and Te in different environmental water samples with the recoveries in the range of 86.3-107% for the spiked samples. Copyright © 2015 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Wug-Dong; Tanioka, Kenkichi

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a longmore » wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.« less

Tellurium doping effect in avalanche-mode amorphous selenium photoconductive film

NASA Astrophysics Data System (ADS)

Park, Wug-Dong; Tanioka, Kenkichi

2014-11-01

Amorphous selenium (a-Se) high-gain avalanche rushing amorphous photoconductor (HARP) film has been used for highly sensitive imaging devices. To improve the spectral response of a-Se HARP photoconductive film at a long wavelength, the tellurium (Te) doping effect in an 8-μm-thick a-Se HARP film was investigated. The thickness of the Te-doped a-Se layer in the 8-μm-thick a-Se HARP films was varied from 60 to 120 nm. The signal current increases significantly due to the avalanche multiplication when the target voltage is increased over the threshold voltage. In the 8-μm-thick a-Se HARP film with a Te-doped layer, the spectral response at a long wavelength was improved in comparison with the a-Se HARP film without a Te-doped layer. In addition, the increase of the lag in the 8-μm-thick a-Se HARP target with a Te-doped layer of 120 nm is caused by the photoconductive lag due to the electrons trapped in the Te-doped layer. Based on the current-voltage characteristics, spectral response, and lag characteristics of the 8-μm-thick a-Se HARP targets, the Te-doped layer thickness of 90 nm is suitable for the 8-μm-thick a-Se HARP film.

Tellurium Distribution and Speciation in Contaminated Soils from Abandoned Mine Tailings: Comparison with Selenium.

PubMed

Qin, Hai-Bo; Takeichi, Yasuo; Nitani, Hiroaki; Terada, Yasuko; Takahashi, Yoshio

2017-06-06

The distribution and chemical species of tellurium (Te) in contaminated soil were determined by a combination of microfocused X-ray fluorescence (μ-XRF), X-ray diffraction (μ-XRD), and X-ray absorption fine structure (μ-XAFS) techniques. Results showed that Te was present as a mixture of Te(VI) and Te(IV) species, while selenium (Se) was predominantly present in the form of Se(IV) in the soil contaminated by abandoned mine tailings. In the contaminated soil, Fe(III) hydroxides were the host phases for Se(IV), Te(IV), and Te(VI), but Te(IV) could be also retained by illite. The difference in speciation and solubility of Se and Te in soil can result from different structures of surface complexes for Se and Te onto Fe(III) hydroxides. Furthermore, our results suggest that the retention of Te(IV) in soil could be relatively weaker than that of Te(VI) due to structural incorporation of Te(VI) into Fe(III) hydroxides. These findings are of geochemical and environmental significance for better understanding the solubility, mobility, and bioavailability of Te in the surface environment. To the best of our knowledge, this is the first study reporting the speciation and host phases of Te in field soil by the μ-XRF-XRD-XAFS techniques.

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Lehoczky, S. L.; Li, C.; Knuteson, D.; Raghothamachar, B.; Dudley, M.; Szoke, J.; Barczy, P.

2004-01-01

In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.

Study of interatomic interactions and phonons in magnesium chalcogenides

NASA Astrophysics Data System (ADS)

Gupta, Yuhit; Sinha, M. M.

2018-05-01

Alkaline earth chalcogenides (AECs) are very important compounds because of these possess semiconducting properties besides having large band gap mostly of the order of 7-10 eV which is the characteristic properties of insulators. These compounds are having many important optoelectronic properties, which serves its role in the production of many electronic devices. These are found in many crystallographic phases such as rock salt (B1), zinc blende (B3), wurtzite (B5) and nickel arsenide (B8) phase. A de-Launay angular force (DAF) model has been used to study the interatomic interactions and phonons of MgX (X=S, Se, Te) in zinc blende structure. The interatomic interaction in the form of central and angular forces up to second nearest neighbors has been considered. The interatomic interaction Mg-X is found to be strongest and its value is highest for MgS compared to others. This is because of small bond length in MgS compared to others. Zone centre phonons have been calculated for MgX and are in agreement with other available results. The phonon dispersion curves in three high symmetric direction are calculated for MgX (X=S, Se, Te) and are interpreted in light of other existing results.

Synthesis and Characterization of Potassium Aryl- and Alkyl-Substituted Silylchalcogenolate Salts

DOE PAGES

Brown, Jessica Lynn; Montgomery, Ashley C.; Samaan, Christopher A.; ...

2016-02-23

Treatment of either triphenyl(chloro)silane or tert-butyldiphenyl(chloro)silane with potassium metal in THF, followed by addition of 18-crown-6, affords [K(18-crown-6)][SiPh 3] (1) and [K(18-crown-6)][SiPh 2 tBu] (2), respectively, as the reaction products in high yield. Compounds 1 and 2 were fully characterized including by multi-nuclear NMR and IR spectroscopies. Addition of elemental chalcogen to either 1 or 2, results in facile chalcogen insertion into the potassium-silicon bond to afford the silylchalcogenolates, [K(18-crown-6)][E– SiPh2R] (E = S, R = Ph (3); Se, R = Ph (4); E = Te, R = Ph (5); E = S, R = tBu (6); E = Se,more » R = tBu (7); E = Te, R = tBu (8)), in moderate to good yield. The silylchalcogenolates reported herein were characterized by multi-nuclear NMR and IR spectroscopies, and their solid-state molecular structures were determined by single-crystal X-ray crystallography. Importantly, the reported compounds crystallize as discrete monomers in the solid-state, a structural feature not previously observed in silylchalcogenolates, providing well-defined access routes into systematic metal complexation studies.« less

Resistivity, carrier trapping, and polarization phenomenon in semiconductor radiation detection materials

NASA Astrophysics Data System (ADS)

Du, Mao-Hua; Biswas, Koushik; Singh, David J.

2012-10-01

In this paper, we report theoretical studies of native defects and dopants in a number of room-temperature semiconductor radiation detection materials, i.e., CdTe, TlBr, and Tl6SeI4. We address several important questions, such as what causes high resistivity in these materials, what explains good μτ product (carrier mobility-lifetime product) in soft-lattice ionic compounds that have high defect density, and how to obtain high resistivity and low carrier trapping simultaneously. Our main results are: (1) shallow donors rather than deep ones are responsible for high resistivity in high-quality detectorgrade CdTe; (2) large dielectric screening and the lack of deep levels from low-energy native defects may contribute to the good μτ products for both electrons and holes in TlBr; (3) the polarization phenomenon in Tl6SeI4 is expected to be much reduced compared to that in TlBr.

Band engineering in core/shell ZnTe/CdSe for photovoltage and efficiency enhancement in exciplex quantum dot sensitized solar cells.

PubMed

Jiao, Shuang; Shen, Qing; Mora-Seró, Iván; Wang, Jin; Pan, Zhenxiao; Zhao, Ke; Kuga, Yuki; Zhong, Xinhua; Bisquert, Juan

2015-01-27

Even though previously reported CdTe/CdSe type-II core/shell QD sensitizers possess intrinsic superior optoelectronic properties (such as wide absorption range, fast charge separation, and slow charge recombination) in serving as light absorbers, the efficiency of the resultant solar cell is still limited by the relatively low photovoltage. To further enhance photovoltage and cell efficiency accordingly, ZnTe/CdSe type-II core/shell QDs with much larger conduction band (CB) offset in comparison with that of CdTe/CdSe (1.22 eV vs 0.27 eV) are adopted as sensitizers in the construction of quantum dot sensitized solar cells (QDSCs). The augment of band offset produces an increase of the charge accumulation across the QD/TiO2 interface under illumination and induces stronger dipole effects, therefore bringing forward an upward shift of the TiO2 CB edge after sensitization and resulting in enhancement of the photovoltage of the resultant cell devices. The variation of relative chemical capacitance, Cμ, between ZnTe/CdSe and reference CdTe/CdSe cells extracted from impedance spectroscopy (IS) characterization under dark and illumination conditions clearly demonstrates that, under light irradiation conditions, the sensitization of ZnTe/CdSe QDs upshifts the CB edge of TiO2 by the level of ∼ 50 mV related to that in the reference cell and results in the enhancement of V(oc) of the corresponding cell devices. In addition, charge extraction measurements have also confirmed the photovoltage enhancement in the ZnTe/CdSe cell related to reference CdTe/CdSe cell. Furthermore, transient grating (TG) measurements have revealed a faster electron injection rate for the ZnTe/CdSe-based QDSCs in comparison with the CdSe cells. The resultant ZnTe/CdSe QD-based QDSCs exhibit a champion power conversion efficiency of 7.17% and a certified efficiency of 6.82% under AM 1.5 G full one sun illumination, which is, as far as we know, one of the highest efficiencies for liquid-junction QDSCs.

Inversion symmetry breaking induced triply degenerate points in orderly arranged PtSeTe family materials

NASA Astrophysics Data System (ADS)

Xiao, R. C.; Cheung, C. H.; Gong, P. L.; Lu, W. J.; Si, J. G.; Sun, Y. P.

2018-06-01

k paths exactly with symmetry allow to find triply degenerate points (TDPs) in band structures. The paths that host the type-II Dirac points in PtSe2 family materials also have the spatial symmetry. However, due to Kramers degeneracy (the systems have both inversion symmetry and time reversal symmetry), the crossing points in them are Dirac ones. In this work, based on symmetry analysis, first-principles calculations, and method, we predict that PtSe2 family materials should undergo topological transitions if the inversion symmetry is broken, i.e. the Dirac fermions in PtSe2 family materials split into TDPs in PtSeTe family materials (PtSSe, PtSeTe, and PdSeTe) with orderly arranged S/Se (Se/Te). It is different from the case in high-energy physics that breaking inversion symmetry I leads to the splitting of Dirac fermion into Weyl fermions. We also address a possible method to achieve the orderly arranged in PtSeTe family materials in experiments. Our study provides a real example that Dirac points transform into TDPs, and is helpful to investigate the topological transition between Dirac fermions and TDP fermions.

The electronic properties of SWNTs intercalated by electron acceptors

NASA Astrophysics Data System (ADS)

Chernysheva, M. V.; Kiseleva, E. A.; Verbitskii, N. I.; Eliseev, A. A.; Lukashin, A. V.; Tretyakov, Yu. D.; Savilov, S. V.; Kiselev, N. A.; Zhigalina, O. M.; Kumskov, A. S.; Krestinin, A. V.; Hutchison, J. L.

2008-05-01

Here we report synthesis of Chal@SWNT nanocomposites (where Chal=S, Se and Te) and the impact of the intercalated electron-acceptor compounds on the electronic properties of SWNTs. The chalcogens were introduced to the channels of single-walled carbon nanotubes by molten media technique via impregnation of pre-opened SWNTs with melted guest compounds in vacuum. HRTEM imaging confirms the filling of nanotube channels by continuous nanostructures of corresponding chalcogens. The strong influence of incorporated matter on the electronic properties of the SWNTs was detected by Raman spectroscopy.

High surface area graphene-supported metal chalcogenide assembly

DOEpatents

Worsley, Marcus A.; Kuntz, Joshua; Orme, Christine A.

2016-04-19

A composition comprising at least one graphene-supported assembly, which comprises a three-dimensional network of graphene sheets crosslinked by covalent carbon bonds, and at least one metal chalcogenide compound disposed on said graphene sheets, wherein the chalcogen of said metal chalcogenide compound is selected from S, Se and Te. Also disclosed are methods for making and using the graphene-supported assembly, including graphene-supported MoS.sub.2. Monoliths with high surface area and conductivity can be achieved. Lower operating temperatures in some applications can be achieved. Pore size and volume can be tuned.

Rationally Controlled Synthesis of CdSexTe1−x Alloy Nanocrystals and Their Application in Efficient Graded Bandgap Solar Cells

PubMed Central

Wen, Shiya; Li, Miaozi; Yang, Junyu; Mei, Xianglin; Wu, Bin; Liu, Xiaolin; Heng, Jingxuan; Hou, Lintao; Xu, Wei; Wang, Dan

2017-01-01

CdSexTe1−x semiconductor nanocrystals (NCs), being rod-shaped/irregular dot-shaped in morphology, have been fabricated via a simple hot-injection method. The NCs composition is well controlled through varying molar ratios of Se to Te precursors. Through changing the composition of the CdSexTe1−x NCs, the spectral absorption of the NC thin film between 570–800 nm is proved to be tunable. It is shown that the bandgap of homogeneously alloyed CdSexTe1−x active thin film is nonlinearly correlated with the different compositions, which is perceived as optical bowing. The solar cell devices based on CdSexTe1−x NCs with the structure of ITO/ZnO/CdSe/CdSexTe1−x/MoOx/Au and the graded bandgap ITO/ZnO/CdSe(w/o)/CdSexTe1−x/CdTe/MoOx/Au are systematically evaluated. It was found that the performance of solar cells degrades almost linearly with the increase of alloy NC film thickness with respect to ITO/ZnO/CdSe/CdSe0.2Te0.8/MoOx/Au. From another perspective, in terms of the graded bandgap structure of ITO/ZnO/CdSe/CdSexTe1−x/CdTe/MoOx/Au, the performance is improved in contrast with its single-junction analogues. The graded bandgap structure is proved to be efficient when absorbing spectrum and the solar cells fabricated under the structure of ITO/ZnO/CdSe0.8Te0.2/CdSe0.2Te0.8/CdTe/MoOx/Au indicate power conversion efficiency (PCE) of 6.37%, a value among the highest for solution-processed inversely-structured CdSexTe1−x NC solar cells. As the NC solar cells are solution-processed under environmental conditions, they are promising for fabricating solar cells at low cost, roll by roll and in large area. PMID:29117132

Optical Characterization of Bulk ZnSeTe Solid Solutions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Zhu, Shen; Lehoczky, S. L.; Wang, Ling Jun

2000-01-01

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe, and ZnSe(1-x)Te(x)(0 less than x less than 0.4) grown by physical vapor transport. Energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. A best fit curve to the band gap versus composition x data gives a bowing parameter of 1.45. This number lies between the value of 1.23 determined previously on ZnSeTe bulk crystals and the value of 1.621 reported on ZnSeTe epilayers. Low-temperature photoluminescence (PL) spectra were measured on six samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe(1-x)Te(x) samples, 0.09 less than x less than 0.39. For x=0.09, this emission energy is about 0.2 eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x=0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted as being associated with the exciton bound to Te clusters because of the high Te content in these samples.

Energy, angular and spatial distributions of primary electrons inside photoconducting materials for digital mammography: Monte Carlo simulation studies.

PubMed

Sakellaris, T; Spyrou, G; Tzanakos, G; Panayiotakis, G

2007-11-07

Materials such as a-Se, a-As(2)Se(3), GaSe, GaAs, Ge, CdTe, CdZnTe, Cd(0.8)Zn(0.2)Te, ZnTe, PbO, TlBr, PbI(2) and HgI(2) are potential candidates as photoconductors in direct detectors for digital mammography. The x-ray induced primary electrons inside a photoconductor's bulk comprise the initial signal that propagates and forms the final signal (image) on the detector's electrodes. An already developed model for a-Se has been properly extended to simulate the primary electron production in the materials mentioned. Primary electron characteristics, such as their energy, angular and spatial distributions that strongly influence the characteristics of the final image, were studied for both monoenergetic and polyenergetic x-ray spectra in the mammographic energy range. The characteristic feature in the electron energy distributions for PbI(2) and HgI(2) is the atomic deexcitation peaks, whereas for the rest of the materials their shape can also be influenced by the electrons produced from primary photons. The electrons have a small tendency to be forward ejected whereas they prefer to be ejected perpendicular (theta = pi/2) to the incident beam's axis and at two lobes around phi = 0 and phi = pi. At practical mammographic energies (15-40 keV) a-Se, a-As(2)Se(3) and Ge have the minimum azimuthal uniformity whereas CdZnTe, Cd(0.8)Zn(0.2)Te and CdTe the maximum one. The spatial distributions for a-Se, a-As(2)Se(3), GaSe, GaAs, Ge, PbO and TlBr are almost independent of the polyenergetic spectrum, while those for CdTe, CdZnTe, Cd(0.8)Zn(0.2)Te, ZnTe, PbI(2) and HgI(2) have a spectrum dependence. In the practical mammographic energy range and at this primitive stage of primary electron production, a-Se has the best inherent spatial resolution as compared to the rest of the photoconductors. PbO has the minimum bulk space in which electrons can be produced whereas CdTe has the maximum one.

Ground state degeneracy, energy barriers, and molecular dynamics evidence for two-dimensional disorder in black phosphorus and monochalcogenide monolayers at finite temperature

NASA Astrophysics Data System (ADS)

Mehboudi, Mehrshad; Barraza-Lopez, Salvador; Dorio, Alex M.; Zhu, Wenjuan; van der Zande, Arend; Churchill, Hugh O. H.; Pacheco-Sanjuan, Alejandro A.; Harriss, Edmund O.; Kumar, Pradeep

Mono-layers of black phosphorus and other two dimensional materials such as mono-layers of SiSe, GeS, GeSe, GeTe, Sns, SnSe, and SnTe with a similar crystalline structure have a four-fold degenerate ground state that leads to two-dimensional disorder at finite temperature. Disorder happens when neighboring atoms gently re-accommodate bonds beyond a critical temperature. In this talk, the effect of atomic numbers on the transition temperature will be discussed. In addition Car-Parinello molecular dynamics calculations at temperatures 30, 300 and 1000 K were performed on supercells containing more than five hundred atoms and the results from these calculations confirm the transition onto a two-dimensional disordered structure past the critical temperature, which is close to room temperature for many of these compounds. References: M. Mehboudi, A.M. Dorio, W. Zhu, A. van der Zande, H.O.H. Churchill, A.A. Pacheco Sanjuan, E.O.H. Harris, P. Kumar, and S. Barraza-Lopez. arXiv:1510.09153.

Phase stabilities of pyrite-related MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te): A systematic DFT study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bachhuber, Frederik; School of Chemical Sciences, University of Auckland, Private Bag 92019, Auckland; Krach, Alexander

2015-03-15

Pyrite-type and related systems appear for a wide range of binary and ternary combinations of transition metals and main group elements that form Zintl type dumbbell anion units. Those representatives with 20 valence electrons exhibit an extraordinary structural flexibility and interesting properties as low-gap semiconductors or thermoelectric and electrode materials. This work is devoted to the systematic exploration of novel compounds within the class of MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te) by means of density functional calculations. Their preferred structures are predicted from an extended scheme of colored pyrites and marcasites. To determine theirmore » stabilities, competing binary MT{sub 2} and MCh{sub 2} boundary phases are taken into account as well as ternary M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} systems. Recently established stability diagrams are presented to account for MTCh ordering phenomena with a focus on a not-yet-reported ordering variant of the NiAs{sub 2} type. Due to the good agreement with experimental data available for several PtTCh systems, the predictions for the residual systems are considered sufficiently accurate. - Graphical abstract: Compositional and structural stability of MTCh compounds is investigated from first principle calculations. A conceptional approach is presented to study and predict novel stable and metastable compounds and structures of low gap semiconductors with TCh dumbbell units that are isoelectronic and structurally related to pyrite (FeS{sub 2}). - Highlights: • Study of compositional stability of MTCh vs. M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} compounds. • Study of structural stability of known and novel MTCh compounds. • Prediction of novel stable and metastable structures and compounds isoelectronic to pyrite, FeS{sub 2}.« less

A general route for the rapid synthesis of one-dimensional nanostructured single-crystal Te, Se and Se Te alloys directly from Te or/and Se powders

NASA Astrophysics Data System (ADS)

Zhou, Bo; Zhu, Jun-Jie

2006-03-01

A general and template-free 'disproportionation and reversal' route was developed to synthesize one-dimensional (1D) nanostructures of Te, Se and Se-Te alloys directly from Te or/and Se powders. The products were characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and scanning electron microscopy (SEM). Te nanorods and nanowires with a width varying from about 40 nm to about 300 nm, Se nanowires with a width of 60-100 nm and a length of 4-6 µm, and SexTe100-x alloy nanorods with x in a wide range, and with a width of 30-70 nm and an aspect ratio of three to five, were prepared. The mechanism of formation of the nanorods and nanowires and the effects of the experimental conditions, such as solution concentration, cooling rate, solvent nature and heating process, on the morphology and size of the products have been discussed. We believe that this general route and some other proper reversible processes between solid state and solution state can be extended to the transformations from various bulk materials into nanosized materials with various morphologies.

Electron Transport and Minority Carrier Lifetime in HgCdSe 2013 2-6 Workshop

DTIC Science & Technology

2014-03-11

FOR PUBLIC RELEASE Alternative IR Material 0.54 0.56 0.58 0.60 0.62 0.64 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 HgSe HgTe MgS ZnS MgTe CdS...CdSe ZnSe ZnTe CdTe AlP GaP AlSb InP Ge Si GaSb InSbInAs AlAs GaAs MgSe Ba nd ga p En er gy (e V) Lattice Constant (nm) • HgCdSe is being

Precipitation of anion inclusions and plasticity under hydrostatic pressure in II-VI crystals

NASA Astrophysics Data System (ADS)

Lindberg, G. P.; Weinstein, B. A.

2016-10-01

Precipitation of anion nanocrystals (NCs) in initially stoichiometric II-VI crystals under hydrostatic pressure and light exposure is explored by Raman spectroscopy, and the mechanism for this effect is analyzed by model calculations. ZnSe, ZnTe, and CdSe crystals are studied in bulk and/or epitaxial-film forms. Se and Te NCs in the trigonal (t) phase precipitate in ZnSe and ZnTe, but the effect is absent or minimal in CdSe. The precipitation is induced by pressure and assisted by sub-band-gap light. In ZnSe, t-Se NCs appear for pressure exceeding 4.8 GPa and light flux above 50 -70 W /m m2 . In ZnTe, the precipitation of t-Te NCs requires less pressure to initiate, and there is a clear upper-pressure limit for t-Te nuclei to form. We find also that ZnTe samples with cleavage damage or elevated zinc-vacancy content are more prone to form t-Te NCs at lower pressures (even 1 atm in some cases) and lower flux. The precipitation seen in ZnSe and ZnTe occurs at pressures far below their phase transitions, and cannot be due to those transitions. Rather, we propose that the NCs nucleate on dislocations that arise from hydrostatic-pressure induced plastic flow triggered by noncubic defect sites. Calculations of the kinetic barrier for growth of an optimally shaped nucleus are performed, including hydrostatic pressure in the energy minimization scheme. Using sensible values for the model parameters related to the cohesive energies of Se and Te, the calculations account for our main observations, including the existence of an upper pressure limit for precipitation, and the absence of precipitation in CdSe. We consider the effects of pressure-induced precipitate formation on the I-II phase transitions in a variety of binary semiconductors and make predictions of when this effect should be important.

Chemical Sample Processing for Combined Selenium Isotope and Selenium-Tellurium Elemental Investigation of the Earth's Igneous Reservoirs

NASA Astrophysics Data System (ADS)

Yierpan, Aierken; König, Stephan; Labidi, Jabrane; Kurzawa, Timon; Babechuk, Michael G.; Schoenberg, Ronny

2018-02-01

The redox-sensitive, chalcophile, and volatile Se stable isotope system offers new perspectives to investigate the origin and evolution of terrestrial volatiles and the roles of magmatic and recycling processes in the development of the redox contrast between Earth's reservoirs. Selenium isotope systematics become more robust in a well-constrained petrogenetic context as can be inferred from Se-Te elemental signatures of sulfides and igneous rocks. In this study, we present a high-yield chemical sample processing method that allows the determination of Se-Te concentrations and Se isotope composition from the same sample digest of silicate rocks by hydride generation isotope dilution (ID) quadrupole inductively coupled plasma mass spectrometry (ICP-MS) and double spike (DS) multicollector (MC)-ICP-MS, respectively. Our procedure yields ˜80% Se-Te recoveries with quantitative separation of relevant interfering elements such as Ge and HG-buffering metals. Replicate analyses of selected international reference materials yield uncertainties better than 0.11‰ (2 s.d.) on δ82/76Se and 3% (r.s.d.) on Se concentration for DS MC-ICP-MS determinations for as low as ˜10 ng sample Se. The precision of Se-Te concentration measurements by ID ICP-MS is better than 3% and 5% (r.s.d.) for total amounts of ˜0.5-1 ng Se and ˜0.2-0.5 ng Te, respectively. The basaltic reference materials have variable Se-Te contents, but their δ82/76Se values are rather uniform (on average 0.23 ± 0.14‰; 2 s.d.) and different from the chondritic value. This altogether provides the methodology and potential to extend the limited data set of coupled Se isotope and Se-Te elemental systematics of samples relevant to study the terrestrial igneous inventory.

ARPES Study on the Strongly Correlated Iron Chalcogenides Fe1+ySexTe1-x

NASA Astrophysics Data System (ADS)

Liu, Zhongkai

2014-03-01

The level of electronic correlation has been one of the key questions in understanding the nature of iron-based superconductivity. Using Angle Resolved Photoemission Spectroscopy (ARPES), we systematically investigated the correlation level in the iron chalcogenide family Fe1+ySexTe1-x. For the parent compound Fe1.02Te, we discovered ``peak-dip-hump'' spectra with heavily renormalized quasiparticles in the low temperature antiferromagnetic (AFM) state, characteristic of coherent polarons seen in other correlated materials with complex electronic and lattice interactions. As the temperature (or Se ratio x) increases and Fe1.02SexTe1-x is in the paramagnetic (PM) phase, we observed dissociation behavior of polarons, suggestive of connection between the weakening electron-phonon coupling and AFM. Further increase of x leads to an incoherent to coherent crossover in the electronic structure, indicating a reduction in the electronic correlation as the superconductivity emerges. Furthermore, the reduction of the electronic correlation in Fe1+ySexTe1-x evolves in an orbital-dependent way, where the dxy orbital is influenced most significantly. At the other end of the phase diagram (FeSe) where the single crystal is not stable, we have studied the MBE-grown thin film which also reveals orbital-dependent strong correlation in the electronic structure. Our findings provide a quantitative comprehension on the correlation level and its evolution on the phase diagram of Fe1+ySexTe1-x. We discuss the physical scenarios leading to strong correlations and its connection to superconductivity.

Li 2Se as a Neutron Scintillator

DOE PAGES

Du, Mao-Hua; Shi, Hongliang; Singh, David J.

2015-06-23

We show that Li 2Se:Te is a potential neutron scintillator material based on density functional calculations. Li 2Se exhibits a number of properties favorable for efficient neutron detection, such as a high Li concentration for neutron absorption, a small effective atomic mass and a low density for reduced sensitivity to background gamma rays, and a small band gap for a high light yield. Our calculations show that Te doping should lead to the formation of deep acceptor complex V Li-Te Se, which can facilitate efficient light emission, similar to the emission activation in Te doped ZnSe.

Thermodynamic properties of model CdTe/CdSe mixtures

DOE PAGES

van Swol, Frank; Zhou, Xiaowang W.; Challa, Sivakumar R.; ...

2015-02-20

We report on the thermodynamic properties of binary compound mixtures of model groups II–VI semiconductors. We use the recently introduced Stillinger–Weber Hamiltonian to model binary mixtures of CdTe and CdSe. We use molecular dynamics simulations to calculate the volume and enthalpy of mixing as a function of mole fraction. The lattice parameter of the mixture closely follows Vegard's law: a linear relation. This implies that the excess volume is a cubic function of mole fraction. A connection is made with hard sphere models of mixed fcc and zincblende structures. We found that the potential energy exhibits a positive deviation frommore » ideal soluton behaviour; the excess enthalpy is nearly independent of temperatures studied (300 and 533 K) and is well described by a simple cubic function of the mole fraction. Using a regular solution approach (combining non-ideal behaviour for the enthalpy with ideal solution behaviour for the entropy of mixing), we arrive at the Gibbs free energy of the mixture. The Gibbs free energy results indicate that the CdTe and CdSe mixtures exhibit phase separation. The upper consolute temperature is found to be 335 K. Finally, we provide the surface energy as a function of composition. Moreover, it roughly follows ideal solution theory, but with a negative deviation (negative excess surface energy). This indicates that alloying increases the stability, even for nano-particles.« less

Enhancement of Thermoelectric Performances in a Topological Crystal Insulator Pb0.7Sn0.3Se via Weak Perturbation of the Topological State and Chemical Potential Tuning by Chlorine Doping.

PubMed

Lin, Chan-Chieh; Kim, Gareoung; Ginting, Dianta; Ahn, Kyunghan; Rhyee, Jong-Soo

2018-04-04

Topological insulators generally share commonalities with good thermoelectric (TE) materials because of their narrow band gaps and heavy constituent elements. Here, we propose that a topological crystalline insulator (TCI) could exhibit a high TE performance by breaking its crystalline symmetry and tuning the chemical potential by elemental doping. As a candidate material, we investigate the TE properties of the Cl-doped TCI Pb 0.7 Sn 0.3 Se. The infrared absorption spectra reveal that the band gap is increased from 0.055 eV for Pb 0.7 Sn 0.3 Se to 0.075 eV for Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 , confirming that the Cl doping can break the crystalline mirror symmetry of a TCI Pb 0.7 Sn 0.3 Se and thereby enlarge its bulk electronic band gap. The topological band inversion is confirmed by the extended X-ray absorption fine structure spectroscopy, which shows that the TCI state is weakened in a chlorine x = 0.05-doped compound. The small gap opening and partial linear band dispersion with massless and massive bands may have a high power factor (PF) for high electrical conductivity with an enhancement of the Seebeck coefficient. As a result, Pb 0.7 Sn 0.3 Se 0.99 Cl 0.01 shows a considerably enhanced ZT of 0.64 at 823 K, which is about 1200% enhancement in ZT compared with that of the undoped Pb 0.7 Sn 0.3 Se. This work demonstrates that the optimal n-type Cl doping tunes the chemical potential together with breaking the state of the TCI, suppresses the bipolar conduction at high temperatures, and thereby enables the Seebeck coefficient to increase up to 823 K, resulting in a significantly enhanced PF at high temperatures. In addition, the bipolar contribution to thermal conductivity is effectively suppressed for the Cl-doped samples of Pb 0.7 Sn 0.3 Se 1- x Cl x ( x ≥ 0.01). We propose that breaking the crystalline mirror symmetry in TCIs could be a new research direction for exploring high-performance TE materials.

Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb

NASA Astrophysics Data System (ADS)

Chai, J.; Lee, K.-K.; Doyle, K.; Dinan, J. H.; Myers, T. H.

2012-10-01

A key issue with the current HgCdTe/Si system is the high dislocation density due to the large mismatch between HgCdTe and Si. An alternative system that has superior lattice matching is HgCdSe/GaSb. A buffer layer to mitigate issues with direct nucleation of HgCdSe on GaSb is ZnTe1- x Se x . We have performed preliminary studies into the growth of lattice-matched ZnTe1- x Se x on both (100) and (211)B GaSb. The effects of substrate orientation, substrate temperature, and growth conditions on the morphology and crystallography of ZnTe0.99Se0.01 alloys were investigated. The lattice-matching condition yielded minimum root-mean-square (rms) roughness of 1.1 nm, x-ray rocking curve full-width at half-maximum (FWHM) value of ~29 arcsec, and density of nonradiative defects of mid-105 cm-2 as measured by imaging photoluminescence.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport in Low Gravity

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Ramachandran, N.

2013-01-01

Crystals of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, will be grown by physical vapor transport in the Material Science Research Rack (MSRR) on International Space Station (ISS). The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua

1993-01-01

The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(1-x), ZnTe(x)Se(1-x), and Zn(1-x)Cd(x)Se). These materials are useful for opto-electronic applications such as high efficient light emitting diodes and low power threshold and high temperature lasers in the blue-green region of the visible spectrum. The recent demonstration of its optical bistable properties also makes ZnSe a possible candidate material for digital optical computers. The investigation consists of an extensive ground-based study followed by flight experimentation, and involves both experimental and theoretical work. The objectives of the ground-based work are to establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low gravity environment and to obtain the experimental data and perform the analyses required to define the optimum parameters for the flight experiments. During the six months of the Preliminary Definition Phase, the research efforts were concentrated on the binary compound ZnSe - the purification of starting materials of Se by zone refining, the synthesis of ZnSe starting materials, the heat treatments of the starting materials, the vapor transport rate measurements, the vapor partial pressure measurements of ZnSe, the crystal growth of ZnSe by physical vapor transport, and various characterization on the grown ZnSe crystals.

Chalcogen (O2, S, Se, Te) atmosphere annealing induced bulk superconductivity in Fe1+yTe1-xSex single crystal

NASA Astrophysics Data System (ADS)

Sun, Y.; Tsuchiya, Y.; Yamada, T.; Taen, T.; Pyon, S.; Shi, Z. X.; Tamegai, T.

2014-09-01

We reported a detailed study of Fe1+yTe0.6Se0.4 single crystals annealed in the atmosphere of chalcogens (O2, S, Se, Te). After annealing with appropriate amount of chalcogens, Fe1+yTe0.6Se0.4 single crystals show Tc higher than 14 K with a sharp transition width ∼1 K. Critical current density Jc for the annealed crystals reach a very high value ∼2-4 × 105 A/cm2 under zero field, and is also robust under applied field at low temperatures. Magneto-optical imaging reveal that the Jc is homogeneously distributed in the annealed crystals and isotropic in the ab-plane. Our results show that annealing in the atmosphere of chalcogens can successfully induce bulk superconductivity in Fe1+yTe0.6Se0.4.

Spin-rotation symmetry breaking and triplet superconducting state in doped topological insulator CuxBi2Se3

NASA Astrophysics Data System (ADS)

Zheng, Guo-Qing

Spontaneous symmetry breaking is an important concept for understanding physics ranging from the elementary particles to states of matter. For example, the superconducting state breaks global gauge symmetry, and unconventional superconductors can break additional symmetries. In particular, spin rotational symmetry is expected to be broken in spin-triplet superconductors. However, experimental evidence for such symmetry breaking has not been obtained so far in any candidate compounds. We report 77Se nuclear magnetic resonance measurements which showed that spin rotation symmetry is spontaneously broken in the hexagonal plane of the electron-doped topological insulator Cu0.3Bi2Se3 below the superconducting transition temperature Tc =3.4 K. Our results not only establish spin-triplet (odd parity) superconductivity in this compound, but also serve to lay a foundation for the research of topological superconductivity (Ref.). We will also report the doping mechanism and superconductivity in Sn1-xInxTe.

Synthesis of Multishell Nanoplates by Consecutive Epitaxial Growth of Bi2Se3 and Bi2Te3 Nanoplates and Enhanced Thermoelectric Properties.

PubMed

Min, Yuho; Park, Gyeongbae; Kim, Bongsoo; Giri, Anupam; Zeng, Jie; Roh, Jong Wook; Kim, Sang Il; Lee, Kyu Hyoung; Jeong, Unyong

2015-07-28

We herein demonstrate the successive epitaxial growth of Bi2Te3 and Bi2Se3 on seed nanoplates for the scalable synthesis of heterostructured nanoplates (Bi2Se3@Bi2Te3) and multishell nanoplates (Bi2Se3@Bi2Te3@Bi2Se3, Bi2Se3@Bi2Te3@Bi2Se3@Bi2Te3). The relative dimensions of the constituting layers are controllable via the molar ratios of the precursors added to the seed nanoplate solution. Reduction of the precursors produces nanoparticles that attach preferentially to the sides of the seed nanoplates. Once attached, the nanoparticles reorganize epitaxially on the seed crystal lattices to form single-crystalline core-shell nanoplates. The nanoplates, initially 100 nm wide, grew laterally to 620 nm in the multishell structure, while their thickness increased more moderately, from 5 to 20 nm. The nanoplates were pelletized into bulk samples by spark plasma sintering and their thermoelectric properties are compared. A peak thermoelectric figure of merit (ZT) ∼0.71 was obtained at 450 K for the bulk of Bi2Se3@Bi2Te3 nanoplates by simultaneous modulation of electronic and thermal transport in the presence of highly dense grain and phase boundaries.

Evidence of a miscibility gap in the FeTe1-xSex polycrystalline samples prepared with a melting process

NASA Astrophysics Data System (ADS)

Sala, A.; Palenzona, A.; Bernini, C.; Caglieris, F.; Cimberle, M. R.; Ferdeghini, C.; Lamura, G.; Martinelli, A.; Pani, M.; Hecher, J.; Eisterer, M.; Putti, M.

2014-05-01

The study of overdoped FeTe1-xSex (0.5 < x < 1) polycrystalline superconductor samples is reported. The samples were prepared using a melting technique previously developed by our group. Increasing the Se content a phase separation related to the formation of FeSe inside the Fe(Se,Te) phase happens, as demonstrated by structural analysis and magnetic characterization. The proposed phase separation picture is likely the fingerprint of a miscibility gap in the Fe(Se,Te) system.

Impact of Antibody Bioconjugation on Emission and Energy Band Profile of CdSeTe/ZnS Quantum Dots

NASA Astrophysics Data System (ADS)

Torchynska, T. V.; Gomez, J. A. Jaramillo; Polupan, G.; Macotela, L. G. Vega

2018-03-01

The variation of the photoluminescence (PL) and Raman scattering spectra of CdSeTe/ZnS quantum dots (QDs) on conjugation to an antibody has been investigated. Two types of CdSeTe/ZnS QD with different emission wavelength (705 nm and 800 nm) were studied comparatively before and after conjugation to anti-pseudorabies virus antibody (AB). Nonconjugated QDs were characterized by Gaussian-type PL bands. PL shifts to higher energy and asymmetric shape of PL bands was detected in PL spectra of bioconjugated QDs. The surface-enhanced Raman scattering effect was exhibited by the bioconjugated CdSeTe/ZnS QDs, indicating that the excitation light used in the Raman study generated electric dipoles in the AB molecules. The optical bandgap of the CdSeTe core was calculated numerically as a function of its radius based on an effective mass approximation model. The energy band diagrams for non- and bioconjugated CdSeTe/ZnS QDs were obtained, revealing a type II quantum well in the CdSeTe core. The calculations show that AB dipoles, excited in the bioconjugated QDs, stimulate a change in the energy band diagram of the QDs that alters the PL spectrum. These results could be useful for improving the sensitivity of QD biosensors.

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

NASA Astrophysics Data System (ADS)

Kitagawa, Hiroyuki; Matsuura, Tsukasa; Kato, Toshihito; Kamata, Kin-ya

2015-06-01

N-type Bi2Te2.85Se0.15 thermoelectric materials were prepared by liquid phase growth (LPG) using a sliding boat, a simple and short fabrication process for Bi2Te3-related materials. Cu was selected as a donor dopant, and its effect on thermoelectric properties was investigated. Thick sheets and bars of Cu x Bi2 Te2.85Se0.15 ( x=0-0.25) of 1-2mm in thickness were obtained using the process. X-ray diffraction patterns and scanning electron micrographs showed that the in-plane direction tended to correspond to the hexagonal c-plane, which is the preferred direction for thermoelectric conversion. Cu-doping was effective in controlling conduction type and carrier (electron) concentration. The conduction type was p-type for undoped Bi2Te2.85Se0.15 and became n-type after Cu-doping. The Hall carrier concentration was increased by Cu-doping. Small resistivity was achieved in Cu0.02Bi2Te2.85Se0.15 owing to an optimized amount of Cu-doping and high crystal orientation. As a result, the maximum power factor near 310K for Cu0.02Bi2Te2.85Se0.15 was approximately 4×10-3W/K2m and had good reproducibility. Furthermore, the thermal stability of Cu0.02Bi2Te2.85Se0.15 was also confirmed by thermal cycling measurements of electrical resistivity. Thus, n-type Bi2Te2.85Se0.15 with a large power factor was prepared using the present LPG process.

Enhancing Thermoelectric Performance of PbSe by Se Vacancies

NASA Astrophysics Data System (ADS)

Liu, Yefeng; You, Li; Wang, Chenyang; Zhang, Jiye; Yang, Jiong; Guo, Kai; Luo, Jun; Zhang, Wenqing

2018-02-01

Self-doped n-type PbSe1-δ thermoelectric compounds have been successfully synthesized by the melting and annealing method. The Se vacancies are created by intentionally produced deficiency of Se elements during the sample preparation. Such intrinsic doping can raise the electron concentration to a value as high as 1.2 × 1019 cm-3, leading to greatly improved electrical conductivity and power factor in the n-type PbSe1-δ . Furthermore, the presence of Se vacancies effectively enhances the phonon scattering, resulting in reduced lattice thermal conductivity. Thus, the thermoelectric performance of n-type PbSe1-δ is significantly improved by the formation of intrinsic Se vacancies. The achieved ZT value for the Se-vacancy-rich sample varies from ˜ 0.4 at 330 K to ˜ 1.0 at 675 K, which is comparable to those of the reported n-type PbSe materials with extrinsic doping. In addition, the average ZT of our n-type PbSe system reaches 0.77, which approaches the value of p-type PbTe.

Anisotropic thermoelectric properties of layered compounds in SnX2 (X = S, Se): a promising thermoelectric material.

PubMed

Sun, Bao-Zhen; Ma, Zuju; He, Chao; Wu, Kechen

2015-11-28

Thermoelectrics interconvert heat to electricity and are of great interest in waste heat recovery, solid-state cooling and so on. Here we assessed the potential of SnS2 and SnSe2 as thermoelectric materials at the temperature gradient from 300 to 800 K. Reflecting the crystal structure, the transport coefficients are highly anisotropic between a and c directions, in particular for the electrical conductivity. The preferred direction for both materials is the a direction in TE application. Most strikingly, when 800 K is reached, SnS2 can show a peak power factor (PF) of 15.50 μW cm(-1) K(-2) along the a direction, while a relatively low value (11.72 μW cm(-1) K(-2)) is obtained in the same direction of SnSe2. These values are comparable to those observed in thermoelectrics such as SnSe and SnS. At 300 K, the minimum lattice thermal conductivity (κmin) along the a direction is estimated to be about 0.67 and 0.55 W m(-1) K(-1) for SnS2 and SnSe2, respectively, even lower than the measured lattice thermal conductivity of Bi2Te3 (1.28 W m(-1) K(-1) at 300 K). The reasonable PF and κmin suggest that both SnS2 and SnSe2 are potential thermoelectric materials. Indeed, the estimated peak ZT can approach 0.88 for SnSe2 and a higher value of 0.96 for SnS2 along the a direction at a carrier concentration of 1.94 × 10(19) (SnSe2) vs. 2.87 × 10(19) cm(-3) (SnS2). The best ZT values in SnX2 (X = S, Se) are comparable to that in Bi2Te3 (0.8), a typical thermoelectric material. We hope that this theoretical investigation will provide useful information for further experimental and theoretical studies on optimizing the thermoelectric properties of SnX2 materials.

Low-Cost Lattice Matching Zn(Se)Te/Si Composite Substrates for HgCdSe and Type-2 Superlattices

DTIC Science & Technology

2013-09-01

far from optimized. In similar fashion, we studied the impact of Zn/Te flux ratio during ZnTe growth. In this case , three ZnTe(100) layers were...6.1 Å, such as HgCdSe and GaSb-based type-II strained-layer superlattices. In this report, we present our findings on the systematic studies of...versus lattice parameter for several semiconductor material systems. We conducted systematic studies on the MBE growth of ZnTe on Si in both (211) and

Annealing effect on thermal conductivity and microhardness of carbon nanotube containing Se80Te16Cu4 glassy composites

NASA Astrophysics Data System (ADS)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2018-02-01

This study deals with the effect of thermal annealing on structural/microstructural, thermal and mechanical behavior of pristine Se80Te16Cu4 and carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composites. Pristine Se80Te16Cu4, 3 and 5 wt%CNTs-Se80Te16Cu4 glassy composites are annealed in the vicinity of glass transition temperature to onset crystallization temperature (340-380 K). X-ray diffraction (XRD) pattern revealed formation of polycrystalline phases of hexagonal CuSe and trigonal selenium. The indexed d-values in XRD patterns are in well conformity with the d-values obtained after the indexing of the ring pattern of selected area electron diffraction pattern of TEM images. The SEM investigation exhibited that the grain size of the CNTs containing Se80Te16Cu4 glassy composites increased with increasing annealing temperature and decreased at further higher annealing temperature. Thermal conductivity, microhardness exhibited a substantial increase with increasing annealing temperature of 340-360 K and slightly decreases for 380 K. The variation of thermal conductivity and microhardness can be explained by cross-linking formation and voids reduction.

Study of optical properties of vacuum evaporated carbon nanotube containing Se80Te16Cu4 thin films

NASA Astrophysics Data System (ADS)

Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

2016-08-01

Thin films of Se80Te16Cu4 glassy alloy and 3 wt.% of carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composite were deposited on clean glass substrate by thermal evaporation technique. The scanning electron microscope and energy dispersive x-ray analysis were performed to investigate the surface morphology and elemental composition of as synthesised samples. The reflectance and transmittance spectra of as-deposited thin films were recorded (200-1100 nm) by using UV/VIS/NIR spectrophotometer. The optical band gap and optical constants such as absorption coefficient (α), refractive index (n) and extinction coefficient (k) of Se80Te16Cu4 and 3 wt.% CNTs-Se80Te16Cu4 glassy composite thin films were calculated. It is observed that optical properties alter due to CNTs incorporation in Se80Te16Cu4 glassy alloy. Effect on optical properties due to CNTs incorporation can be explained in terms of concentration of unsaturated bonds/defects in the localised states.

Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R.

We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773more » K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.« less

Elastic, vibration and thermodynamic properties of Cu1‑x Ag x InTe2 (x = 0, 0.25, 0.5, 0.75 and 1) chalcopyrite compounds via first principles

NASA Astrophysics Data System (ADS)

Zhong, Yuhan; Wang, Peida; Mei, Huayue; Jia, Zhenyuan; Cheng, Nanpu

2018-06-01

CuInTe2 chalcopyrite compound is widely used in the fields of optoelectronics and pyroelectricity, and doping atoms can further improve the physical properties of the CuInTe2 compound. For all we know, this is the first time that the elastic behaviors and lattice dynamical properties of Ag-doped CuInTe2 compounds with the tetragonal system are determined theoretically. The elastic, lattice dynamical and thermal properties of Cu1‑x Ag x InTe2 (x = 0, 0.25, 0.5, 0.75 and 1) compounds have been investigated by using density functional theory. The obtained elastic constants of Cu1‑x Ag x InTe2 compounds indicate that these compounds are mechanically stable and elastic anisotropic. The anisotropy of the {001} plane is more obvious than those of the {100} and {010} planes. Additionally, with increasing Ag doping concentrations, the bulk and shear moduli of Cu1‑x Ag x InTe2 compounds decrease and their toughness improves. The phonon spectra and density of states reveal that Cu (or Ag) atoms in Cu1‑x Ag x InTe2 compounds form chemical bonds with Te atoms, and Cu-Te bonds are gradually replaced by Ag-Te bonds with increasing Ag doping concentration. Vibration modes of Cu1‑x Ag x InTe2 compounds at the {{Γ }} point in the Brillouin zone show that each Cu1‑x Ag x InTe2 (x = 0 and 1) crystal includes five irreducible representations (A1, A2, B1, B2 and E). As for Cu1‑x Ag x InTe2 (x = 0.25, 0.5 and 0.75) compounds, each crystal has three irreducible representations (A, B and E). The atomic displacements of several typical phonon modes in CuInTe2 crystals have been analyzed to deepen the understanding of lattice vibrations in Cu1‑x AgxInTe2 compounds. With increasing Ag doping concentration, the Debye temperatures of Cu1‑x Ag x InTe2 compounds decrease, while their heat capacities increase.

Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe.

PubMed

Gurevich, A S; Kochereshko, V P; Bleuse, J; Mariette, H; Waag, A; Akimoto, R

2011-09-07

The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

NASA Astrophysics Data System (ADS)

Gurevich, A. S.; Kochereshko, V. P.; Bleuse, J.; Mariette, H.; Waag, A.; Akimoto, R.

2011-09-01

The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

Pressure-induced magnetic order in FeSe: A muon spin rotation study

NASA Astrophysics Data System (ADS)

Khasanov, Rustem; Guguchia, Zurab; Amato, Alex; Morenzoni, Elvezio; Dong, Xiaoli; Zhou, Fang; Zhao, Zhongxian

2017-05-01

The magnetic order induced by the pressure was studied in FeSe by means of muon spin rotation (μ SR ) technique. By following the evolution of the oscillatory part of the μ SR signal as a function of angle between the initial muon spin polarization and 101 axis of the studied FeSe sample, it was found that the pressure-induced magnetic order in FeSe corresponds either to the collinear (single-stripe) antiferromagnetic order as observed in parent compounds of various FeAs-based superconductors or to the bi-collinear order as obtained in the FeTe system, but with the Fe spins turned by 45o within the a b plane. The value of the magnetic moment per Fe atom was estimated to be ≃0.13 -0.14 μB at p ≃1.9 GPa.

CdTe/CdSe quantum dots improve the binding affinities between α-amylase and polyphenols.

PubMed

Ni, Xiaoling

2012-03-01

People exposed to engineered nanomaterials have potential health risks associated. Human α-amylase is one of the key enzymes in the digestive system. There are few reports about the influence of quantum dots (QDs) on the digestive enzymes and their inhibition system. This work focused on the toxic effect of CdTe/CdSe QDs on the interactions between α-amylase and its natural inhibitors. Thirty-six dietary polyphenols, natural α-amylase inhibitors from food, were studied for their affinities for α-amylase in the absence and presence of CdTe/CdSe QDs by a fluorescence quenching method. The magnitudes of apparent binding constants of polyphenols for α-amylase were almost in the range of 10(5)-10(7) L mol(-1) in the presence of CdTe/CdSe QDs, which were higher than the magnitudes of apparent binding constants in the absence of CdTe/CdSe QDs (10(4)-10(6) L mol(-1)). CdTe/CdSe QDs obviously improved the affinities of dietary polyphenols for α-amylase up to 389.04 times. It is possible that the binding interaction between polyphenols and α-amylase in the presence of CdTe/CdSe QDs was mainly caused by electrostatic interactions. QDs significantly influence the digestive enzymes and their inhibition system. This journal is © The Royal Society of Chemistry 2012

Optical Characterization of Bulk ZnSeTe Solid Solutions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, S.; Zhu, Shen; Lehoczky, S. L.; Wang, Ling Jun

2000-01-01

Optical characterization was performed on wafers sliced from crystals of ZnSe, ZnTe and ZnSe (sub 1-x) Te (sub x) (0 less than x less than 0.4) grown by physical vapor transport technique. The energy band gaps at room temperature were determined from optical transmission measurements on 11 wafers. The best fit to the band gap vs. composition, x, data gives a bowing parameter of 1.336 which is between the value of 1.23 determined previously on ZnSeTe bulk crystals by reflectivity and the value of 1.621 reported on epilayers by photoconductivity. Low-temperature photoluminescence (PL) spectra were measured on 6 samples. The spectra of ZnSe and ZnTe were dominated by near band edge emissions and no deep donor-acceptor pairs were observed. The PL spectrum exhibited a broad emission for each of the ZnSe (sub 1-x) Te (sub x) samples, 0.09 less than x less than 0.39. For x = 0.09, this emission energy is about 0.2eV lower than the band gap energy measured at low temperature. As x increases the energy discrepancy gradually decreases and reduces to almost zero at x = 0.4. The single broad PL emission spectra and the spectra measured as a function of temperature were interpreted to be associated with the exciton bound to Te clusters because of the high Te content in these samples.

Anomalous pressure dependence of thermal conductivities of large mass ratio compounds

DOE PAGES

Lindsay, Lucas R; Broido, David A.; Carrete, Jesus; ...

2015-03-27

The lattice thermal conductivities (k) of binary compound materials are examined as a function of hydrostatic pressure P using a first-principles approach. Compound materials with relatively small mass ratios, such as MgO, show an increase in k with P, consistent with measurements. Conversely, compounds with large mass ratios (e.g., BSb, BAs, BeTe, BeSe) exhibit decreasing with increasing P, a behavior that cannot be understood using simple theories of k. This anomalous P dependence of k arises from the fundamentally different nature of the intrinsic scattering processes for heat-carrying acoustic phonons in large mass ratio compounds compared to those with smallmore » mass ratios. We find this work demonstrates the power of first principles methods for thermal properties and advances the understanding of thermal transport in non-metals.« less

Effect of Te doping on FeSe superconductor synthesized by powder-in-tube

NASA Astrophysics Data System (ADS)

Imaduddin, A.; Nisa, K.; Yudanto, S. D.; Nugraha, H.; Siswayanti, B.

2017-04-01

FeSe is a superconducting material, which has the simplest crystal structure among the Fe-based superconductors. It has no arsenic element, which is very harmful to the human body. In this study, we analyzed the effects of milling time and Te doping on FeSe superconductors. The synthesis of the samples were carried out using powder-in-tube method in a SS304 stainless steel tube. After the pressing process, followed by the sintering process at 500° C for 20 hours, the samples were removed from the tubes. Later, we analyzed its crystal structures, surfaces morphology and the superconductivity properties. Δ-FeSe phase (hexagonal, non-superconductor) and β-FeSe (tetragonal, superconductor) were formed in the samples, including minor phases of Fe and Fe3Se4. Te doping changed the crystal structure from β-FeSe and Δ-FeSe into FeSe0.5Te0.5. In addition, the onset critical temperature (TC, onset) shifted to higher temperature.

NIR-Emitting Alloyed CdTeSe QDs and Organic Dye Assemblies: A Nontoxic, Stable, and Efficient FRET System.

PubMed

Ramírez-Herrera, Doris E; Rodríguez-Velázquez, Eustolia; Alatorre-Meda, Manuel; Paraguay-Delgado, Francisco; Tirado-Guízar, Antonio; Taboada, Pablo; Pina-Luis, Georgina

2018-04-11

In the present work, we synthesize Near Infrared (NIR)-emitting alloyed mercaptopropionic acid (MPA)-capped CdTeSe quantum dots (QDs) in a single-step one-hour process, without the use of an inert atmosphere or any pyrophoric ligands. The quantum dots are water soluble, non-toxic, and highly photostable and have high quantum yields (QYs) up to 84%. The alloyed MPA-capped CdTeSe QDs exhibit a red-shifted emission, whose color can be tuned between visible and NIR regions (608-750 nm) by controlling the Te:Se molar ratio in the precursor mixtures and/or changing the time reaction. The MPA-capped QDs were characterized by UV-visible absorption spectroscopy, fluorescence spectroscopy, transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and zeta potential measurements. Photostability studies were performed by irradiating the QDs with a high-power xenon lamp. The ternary MPA-CdTeSe QDs showed greater photostability than the corresponding binary MPA-CdTe QDs. We report the Förster resonance energy transfer (FRET) from the MPA-capped CdTeSe QDs as energy donors and Cyanine5 NHS-ester (Cy5) dye as an energy acceptor with efficiency ( E ) up to 95%. The distance between the QDs and dye ( r ), the Förster distance ( R ₀), and the binding constant ( K ) are reported. Additionally, cytocompatibility and cell internalization experiments conducted on human cancer cells (HeLa) cells revealed that alloyed MPA-capped CdTeSe QDs are more cytocompatible than MPA-capped CdTe QDs and are capable of ordering homogeneously all over the cytoplasm, which allows their use as potential safe, green donors for biological FRET applications.

NIR-Emitting Alloyed CdTeSe QDs and Organic Dye Assemblies: A Nontoxic, Stable, and Efficient FRET System

PubMed Central

Ramírez-Herrera, Doris E.; Rodríguez-Velázquez, Eustolia; Alatorre-Meda, Manuel; Paraguay-Delgado, Francisco; Tirado-Guízar, Antonio; Taboada, Pablo; Pina-Luis, Georgina

2018-01-01

In the present work, we synthesize Near Infrared (NIR)-emitting alloyed mercaptopropionic acid (MPA)-capped CdTeSe quantum dots (QDs) in a single-step one-hour process, without the use of an inert atmosphere or any pyrophoric ligands. The quantum dots are water soluble, non-toxic, and highly photostable and have high quantum yields (QYs) up to 84%. The alloyed MPA-capped CdTeSe QDs exhibit a red-shifted emission, whose color can be tuned between visible and NIR regions (608–750 nm) by controlling the Te:Se molar ratio in the precursor mixtures and/or changing the time reaction. The MPA-capped QDs were characterized by UV-visible absorption spectroscopy, fluorescence spectroscopy, transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), and zeta potential measurements. Photostability studies were performed by irradiating the QDs with a high-power xenon lamp. The ternary MPA-CdTeSe QDs showed greater photostability than the corresponding binary MPA-CdTe QDs. We report the Förster resonance energy transfer (FRET) from the MPA-capped CdTeSe QDs as energy donors and Cyanine5 NHS-ester (Cy5) dye as an energy acceptor with efficiency (E) up to 95%. The distance between the QDs and dye (r), the Förster distance (R0), and the binding constant (K) are reported. Additionally, cytocompatibility and cell internalization experiments conducted on human cancer cells (HeLa) cells revealed that alloyed MPA-capped CdTeSe QDs are more cytocompatible than MPA-capped CdTe QDs and are capable of ordering homogeneously all over the cytoplasm, which allows their use as potential safe, green donors for biological FRET applications. PMID:29641435

Fabrication of Fe1.1Se0.5Te0.5 bulk by a high energy ball milling technique

NASA Astrophysics Data System (ADS)

Liu, Jixing; Li, Chengshan; Zhang, Shengnan; Feng, Jianqing; Zhang, Pingxiang; Zhou, Lian

2017-11-01

Fe1.1Se0.5Te0.5 superconducting bulks were successfully synthesized by a high energy ball milling (HEBM) aided sintering technique. Two advantages of this new technique have been revealed compared with traditional solid state sintering method. One is greatly increased the density of sintered bulks. It is because the precursor powders with β-Fe(Se, Te) and δ-Fe(Se, Te) were obtained directly by the HEBM process and without formation of liquid Se (and Te), which could avoid the huge volume expansion. The other is the obvious decrease of sintering temperature and dwell time due to the effective shortened length of diffusion paths. The superconducting critical temperature Tc of 14.2 K in our sample is comparable with those in previous reports, and further optimization of chemical composition is on the way.

Local and electronic structure around manganese in Cd0.98Mn0.02Te0.97Se0.03 studied by XAFS

NASA Astrophysics Data System (ADS)

Radisavljević, I.; Novaković, N.; Romčević, N.; Ivanović, N.

2013-04-01

X-ray Absorption Fine Structure (XAFS) technique was employed to study local electronic and structural features of Mn ions incorporated in Cd0.98Mn0.02Te0.97Se0.03. XAFS measurements performed at Mn K edge revealed that manganese Mn(II) ions are well incorporated into the host CdTe lattice (cubic zinc-blende structure type) and their immediate surrounding is found to be composed exclusively of Te atoms. The observed preference of Mn ions distribution around Te opposes earlier observations on the similar systems, where preferential Mn-Se over Mn-Te paring was found.

Chevrel-phase solid solution Mo 6Se 8- xTe x. Study of its superconducting, magnetic and NMR properties

NASA Astrophysics Data System (ADS)

Hamard1a, C.; Auffret, V.; Peña, O.; Le Floch, M.; Nowak, B.; Wojakowski, A.

2000-09-01

The Chevrel-phase solid solution Mo 6Se 8-Mo 6Te 8 was studied by X-ray diffraction, AC and DC magnetic susceptibility and 77Se and 125Te NMR spectroscopy. From the smooth evolution of the lattice parameters and superconducting critical temperatures, a progressive substitution of selenium atoms by tellurium is shown, on the whole range of composition 0⩽ x⩽8, in the formulation Mo 6Se 8- xTe x: the unit-cell volume increases linearly because of the larger ionic size of tellurium, while Tc decreases rapidly (from 6.45 down to 0 K) because of the different formal oxidation states of the anions and a probable evolution of the Fermi level in the density of states. Results of magnetic susceptibility support this model and suggest the inhibition of the intrinsic metallic behavior with increasing x. The NMR spectra of the binaries Mo 6Se 8 and Mo 6Te 8 reveal two significant features, attributed to two different chalcogen positions in the R 3¯ symmetry. At low Se contents in Mo 6Se 8- xTe x ( x=7.5, 7 and 6), selenium first fills the two X(2) sites along the three-fold axis (2c positions), and then it becomes statistically distributed over the general 6f positions, leading to broad 77Se NMR lines. On the other hand, substitution of Te atoms in Mo 6Se 8 seems to occur in a random way, creating large perturbations on the 125Te NMR spectra, over the whole range of x. Theoretical analysis based on the presence of two anisotropic lines (of axial and non-axial symmetries, respectively) allowed us to estimate their anisotropy factors and to perfectly simulate the frequency response of both Mo 6Se 8 and Mo 6Te 8 binaries. Analysis of the Knight shift anisotropy leads us to conclude about the importance of the molybdenum z 2 molecular orbital contribution which controls the Mo-X dipolar interactions.

Electronic and mechanical properties of half-metallic half-Heusler compounds CoCrZ (Z = S, Se, and Te)

NASA Astrophysics Data System (ADS)

Huang, Hai-Ming; Zhang, Chuan-Kun; He, Ze-Dong; Zhang, Jun; Yang, Jun-Tao; Luo, Shi-Jun

2018-01-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 11647133 and 11674113), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2017CFB740 and 2014CFB631), the Scientific Research Items Foundation of Hubei Educational Committee, China (Grant Nos. Q20141802, Q20161803, B2016091, and D20171803), and Hubei Provincial Collaborative Innovation Center for Optoelectronics, China.

Thermal conductivity of Bi2(SexTe1-x)3 alloy films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yoo, Taehee; Lee, Eungkyu; Dong, Sining; Li, Xiang; Liu, Xinyu; Furdyna, Jacek K.; Dobrowolska, Margaret; Luo, Tengfei

2017-06-01

We studied the thermal conductivity of Bi2Se3, Bi2Te3, and their alloy Bi2(SexTe1-x)3 at room temperature using time-domain thermoreflectance measurements. The Bi2(SexTe1-x)3 films with various concentrations of Se and Te prepared by molecular beam epitaxy on GaAs substrates were investigated to study the dependence of thermal conductivity on film composition. We observed that the Bi2(SexTe1-x)3 ternary alloys can have much lower thermal conductivity values compared to those of Bi2Se3 and Bi2Te3. These results may provide useful information for developing and engineering low thermal conductivity materials for thermoelectric applications.

Kinetic limitation of chemical ordering in Bi2Te3-x Se x layers grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Schreyeck, S.; Brunner, K.; Kirchner, A.; Bass, U.; Grauer, S.; Schumacher, C.; Gould, C.; Karczewski, G.; Geurts, J.; Molenkamp, L. W.

2016-04-01

We study the chemical ordering in Bi2Te3-x Se x grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x  =  0 to 3, and determine their material properties using energy dispersive x-ray spectroscopy, x-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi2Te2Se1 reaches a maximum of only  ≈75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 x-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films.

In vitro translation with [34S]-labeled methionine, selenomethionine, and telluromethionine.

PubMed

Ogra, Yasumitsu; Kitaguchi, Takashi; Suzuki, Noriyuki; Suzuki, Kazuo T

2008-01-01

Heteroisotope and heteroatom tagging with [(34)S]-enriched methionine (Met), selenomethionine (SeMet), and telluromethionine (TeMet) was applied to in vitro translation. Green fluorescent protein (GFP) and JNK stimulatory phosphatase-1 (JSP-1) genes were translated with wheat germ extract (WGE) in the presence of Met derivatives. GFPs containing Met derivatives were subjected to HPLC coupled with treble detection, i.e., a photodiode array detector, a fluorescence detector, and an inductively coupled plasma mass spectrometer (ICP-MS). The activities of JSP-1-containing Met derivatives were also measured. GFP and JSP-1 containing [(34)S]-Met and SeMet showed comparable fluorescence intensities and enzyme activities to those containing naturally occurring Met. TeMet was unstable and decomposed in WGE, whereas SeMet was stable throughout the experimental period. Thus, although Te was the most sensitive to ICP-MS detection among S, Se, and Te, TeMet was less incorporated into the proteins than Met and SeMet. Finally, the potential of heteroisotope and heteroatom tagging of desired proteins in in vitro translation followed by ICP-MS detection was discussed. [figure: see text] TeMet was less incorporated into GFP than Met and SeMet due to its instability in WGE.

DFT Studies of Semiconductor and Scintillator Detection Materials

NASA Astrophysics Data System (ADS)

Biswas, Koushik

2013-03-01

Efficient radiation detection technology is dependent upon the development of new semiconductor and scintillator materials with advanced capabilities. First-principles based approaches can provide vital information about the structural, electrical, optical and defect properties that will help develop new materials. In addition to the predictive power of modern density functional methods, these techniques can be used to establish trends in properties that may lead to identifying new materials with optimum properties. We will discuss the properties of materials that are of current interest both in the field of scintillators and room temperature semiconductor detectors. In case of semiconductors, binary compounds such as TlBr, InI, CdTe and recently developed ternary chalcohalide Tl6SeI4 will be discussed. Tl6SeI4 mixes a halide (TlI) with a chalcogenide (Tl2Se), which results in an intermediate band gap (1.86 eV) between that of TlI (2.75 eV) and Tl2Se (0.6 eV). For scintillators, we will discuss the case of the elpasolite compounds whose rich chemical compositions should enable the fine-tuning of the band gap and band edges to achieve high light yield and fast scintillation response.

Secondary overprinting of S-Se-Te signatures in the Earth's mantle: Implications for the Late Veneer

NASA Astrophysics Data System (ADS)

Koenig, S.; Luguet, A.; Lorand, J.; Pearson, D.

2013-12-01

Sulphur, Selenium and Tellurium are both chalcophile and highly siderophile elements (HSE) with near-chondritic ratios and absolute abundances in the terrestrial mantle that exceed those predicted by core-mantle differentiation[1]. These 'excess' HSE abundances have been attributed to addition of ca. 0.5% of chondrite-like material that hit the Earth in its accretionary stage between 4 to 3.8 billion years ago after core-mantle differentiation (Late Veneer[2]). Therefore, like other HSE, S, Se and Te are considered potential tracers for the composition of the Late Veneer, provided that their bulk silicate Earth abundances are properly constrained. In contrast to ca. 250 ppm S, Se and Te are ultra-trace elements in the terrestrial mantle. Like all HSE, they are furthermore controlled by base metal sulphides (BMS) and micrometric platinum group minerals (PGMs)[3]. This strong control exerted by the host mineralogy and petrology on the S-Se-Te systematics at both the micro-scale and the whole-rock scale makes detailed mineralogical and petrological studies of BMS and PGM a pre-requisite to fully understand and accurately interpret the whole-rock signatures. Here we combine in-situ sulphide data and detailed mineralogical observations with whole-rock S-Se-Te-HSE signatures of both lherzolites and harburgites from different geodynamic settings. We demonstrate that the near-chondritic Se and Te signature of 'fertile' mantle rocks (Se/Te ≈9×5) is not a primitive signature of the Earth's mantle, but rather reflects strong enrichment in metasomatic HSE host phases, which erased previous pristine signatures. Consequently, current attempts to identify a potential Late Veneer composition are seriously flawed because, neither refertilisation/metasomatism nor true melt depletion (e.g. harzburgitic residues) have been taken into account for the Primitive Upper Mantle composition estimate[4]. Our combined whole rock and in-situ sulphide data indicate a refertilisation trend towards sub-chondritic Se/Te ratios (i.e. Se/Te < 2). On the other hand, harzburgites that preserve depletion signatures show suprachondritic Se/Te ratios (< 31). Altogether this shows that metasomatic enrichment of mantle rocks may lead to a systematic bias and hence underestimation of the current Se/Te estimate of the primitive mantle. The metasomatic origin of the reported S, Se and Te ratios in peridotites that reflect the control of metasomatic BMS and PGMs[5;6] furthermore show that not all whole rock signatures in the Earth's mantle that scatter around near-chondritic values are primary and hence challenge the simple conception that these features may readily solve the long-standing conundrum of the Late Veneer composition. Refs: [1] Rose-Weston et al. (2009) GCA 73, 4598-4615; [2] Kimura et al. (1974) GCA 38, 683-701; [3] Lorand and Alard (2010) 67, 4137-4151; [4] Wang and Becker (2013) Nature 499, 328-331; [5] König et al. (2012) GCA 86, 354-366; [6] König et al. (2013, in press), EPSL.

Structural and compositional dependence of the CdTexSe1−x alloy layer photoactivity in CdTe-based solar cells

PubMed Central

Poplawsky, Jonathan D.; Guo, Wei; Paudel, Naba; Ng, Amy; More, Karren; Leonard, Donovan; Yan, Yanfa

2016-01-01

The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1−x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1−x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1−x alloy with respect to the degree of Se diffusion. The results show that the CdTexSe1−x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations. PMID:27460872

Significance of the whole rock Re-Os ages in cryptically and modally metasomatised cratonic peridotites: Constraints from HSE-Se-Te systematics

NASA Astrophysics Data System (ADS)

Luguet, Ambre; Behrens, Melanie; Pearson, D. Graham; König, Stephan; Herwartz, Daniel

2015-09-01

The Re-Os isotopic system is the geochronometer of choice to constrain the timing of lithospheric mantle root formation and reconstruct the evolution of Earth's dynamics from the "mantle" perspective. In order to constrain the effects of metasomatic processes on the Re-Os isotopic system, eleven peridotites from the Letlhakane kimberlite pipe were investigated for whole rock major and trace elements, highly siderophile elements (HSE), Se, Te and 187Os/188Os signatures. These spinel peridotites (SP), garnet peridotites (GP), garnet-phlogopite peridotites (GPP) and phlogopite peridotites (PP) experienced cryptic metasomatism and the GP-GPP-PP additionally constitute a sequence of increasing modal metasomatism. The cryptically metasomatised SP appear devoid of base metal sulphides (BMS) and show suprachondritic Se/Te ratios (15-40) and extremely Pd- and Pt-depleted HSE patterns. These features are characteristic of high-degree partial melting residues. Their 187Os/188Os signatures are thus considered to be inherited from the partial melting event. This implies a Neoarchean (2.5-2.8 Ga, TRD eruption) stabilisation of the Letlhakane mantle root and supports the Letlhakane mantle root being a westerly extension of the Zimbabwe cratonic root. The modally metasomatised peridotites contain BMS whose abundance significantly increases from the GPP to the GP and PP. The BMS-poor GPP are only slightly richer in Pt and Pd than the BMS-free SP but have similarly high Se/Te ratios. The BMS-rich GP and PP exhibit significant enrichments in Pt, Pd, Se, Te resulting in HSE-Se-Te signatures similar to that of the Primitive Upper Mantle (PUM). Addition of 0.001-0.05 wt.% metasomatic BMS ± PGM (platinum group minerals, i.e., Pt-tellurides) to highly refractory residues, such as the Letlhakane SP, reproduce well the HSE-Se-Te systematics observed in the BMS-poor and BMS-rich modally metasomatised peridotites. In the GPP, the negligible addition of metasomatic BMS ± PGM did not disturb the 187Os/188Os signatures, indicating TRD eruption ages identical with those of the SP. By contrast, the PP and GP, which suffered significant BMS ± PGM addition, have 187Os/188Os considerably shifted toward more radiogenic values. As a result, unrealistically young TRD eruption ages are obtained that cannot be used to constrain the time frame of the stabilisation of the cratonic roots and the mechanisms of craton formation. The Se-Te and incompatible HSE (i.e., Pt, Pd) are powerful geochemical tools to assess the robustness of the Re-Os isotopic system in mantle peridotites. Specifically, Se/Te and Pd/Ir ratios provide complementary insights into the complex metasomatic history of mantle peridotites. The Se/Te ratio is very sensitive to Os-free PGM metasomatism producing highly variable Se/Te >15 at low, relatively constant Pd/Ir< 0.4 but does not affect the 187Os/188Os systematics. This contrasts with BMS metasomatism, where Pd/Ir becomes more variable (>0.4), at constant but low Se/Te <10 and which is accompanied by modification of the Os isotopic composition of the host peridotite. As they are sensitive indicators of BMS ± PGM metasomatism, HSE, Se and Te should be systematically considered when investigating the timing of stabilisation of lithospheric mantle and its petrogenetic history. This would allow a more robust assessment of the Re-Os ages obtained and provide firmer constraints on the evolution and formation of Archean cratons and early Earth dynamics.

Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

NASA Astrophysics Data System (ADS)

Tanabe, Tadao; Zhao, Shu; Sato, Yohei; Oyama, Yutaka

2017-10-01

The interplanar binding strength of layered GaSe1-xTex crystals was directly measured using a tensile testing machine. The GaSe1-xTex crystals were grown by a low temperature liquid phase solution method under a controlled Se vapor pressure. The stoichiometry-controlled GaSe1-xTex crystal has the ɛ-polytype structure of GaSe, where the Te atoms are substituted for some of the Se atoms in the GaSe crystal. The effect of adding Te on the bonding strength between the GaSe layers was determined from direct measurements of the van der Waals bonding energy. The bonding energy was increased from 0.023 × 106 N/m2 for GaSe to 0.16 × 106 N/m2 for GaSe1-xTex (x = 0.106).

Atomistic tight-binding computations of the structural and optical properties of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals

NASA Astrophysics Data System (ADS)

Sukkabot, Worasak

2018-05-01

A study of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals is carried out using atomistic tight-binding theory and the configuration interaction method to provide information for applications in bioimaging, biolabeling, display devices and near-infrared electronic instruments. The calculations yield the dependences of the internal and external passivated shells on the natural behaviours of CdTe/CdX (X=S and Se)/ZnS core/shell/shell nanocrystals. The reduction of the optical band gaps is observed with increasing numbers of monolayers in the external ZnS shell due to quantum confinement. Interestingly, the optical band gaps of CdTe/CdS/ZnS core/shell/shell nanocrystals are greater than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. In the presence of an external ZnS-coated shell, electron-hole wave function overlaps, oscillation strengths, ground-state exchange energies and Stokes shift are improved, whereas ground-state coulomb energies and fine-structure splitting are reduced. The oscillation strengths, Stokes shift and fine-structure splitting are reduced with the increase in external ZnS shell thickness. The oscillation strengths, Stokes shift and fine-structure splitting of CdTe/CdS/ZnS core/shell/shell nanocrystals are larger than those of CdTe/CdSe/ZnS core/shell/shell nanocrystals. Reduction of the atomistic electron-hole interactions is observed with increasing external ZnS shell size. The strong electron-hole interactions are more probed in CdTe/CdS/ZnS core/shell/shell nanocrystals than in CdTe/CdSe/ZnS core/shell/shell nanocrystals.

Arabidopsis Serrate Coordinates Histone Methyltransferases ATXR5/6 and RNA Processing Factor RDR6 to Regulate Transposon Expression.

PubMed

Ma, Zeyang; Castillo-González, Claudia; Wang, Zhiye; Sun, Di; Hu, Xiaomei; Shen, Xuefeng; Potok, Magdalena E; Zhang, Xiuren

2018-06-18

Serrate (SE) is a key component in RNA metabolism. Little is known about whether and how it can regulate epigenetic silencing. Here, we report histone methyltransferases ATXR5 and ATXR6 (ATXR5/6) as novel partners of SE. ATXR5/6 deposit histone 3 lysine 27 monomethylation (H3K27me1) to promote heterochromatin formation, repress transposable elements (TEs), and control genome stability in Arabidopsis. SE binds to ATXR5/6-regulated TE loci and promotes H3K27me1 accumulation in these regions. Furthermore, SE directly enhances ATXR5 enzymatic activity in vitro. Unexpectedly, se mutation suppresses the TE reactivation and DNA re-replication phenotypes in the atxr5 atxr6 mutant. The suppression of TE expression results from triggering RNA-dependent RNA polymerase 6 (RDR6)-dependent RNA silencing in the se atxr5 atxr6 mutant. We propose that SE facilitates ATXR5/6-mediated deposition of the H3K27me1 mark while inhibiting RDR6-mediated RNA silencing to protect TE transcripts. Hence, SE coordinates epigenetic silencing and RNA processing machineries to fine-tune the TE expression. Copyright © 2018 Elsevier Inc. All rights reserved.

The effect of Se/Te ratio on transient absorption behavior and nonlinear absorption properties of CuIn0.7Ga0.3(Se1-xTex)2 (0 ≤ x ≤ 1) amorphous semiconductor thin films

NASA Astrophysics Data System (ADS)

Karatay, Ahmet; Küçüköz, Betül; Çankaya, Güven; Ates, Aytunc; Elmali, Ayhan

2017-11-01

The characterization of the CuInSe2 (CIS), CuInGaSe (CIGS) and CuGaSe2 (CGS) based semiconductor thin films are very important role for solar cell and various nonlinear optical applications. In this paper, the amorphous CuIn0.7Ga0.3(Se1-xTex)2 semiconductor thin films (0 ≤ x ≤ 1) were prepared with 60 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties and ultrafast transient characteristics were investigated by using open aperture Z-scan and ultrafast pump-probe techniques. The energy bandgap values were calculated by using linear absorption spectra. The bandgap values are found to be varying from 0.67 eV to 1.25 eV for CuIn0.7Ga0.3Te2, CuIn0.7Ga0.3Se1.6Te0.4, CuIn0.7Ga0.3Se0.4Te1.6 and CuIn0.7Ga0.3Se2 thin films. The energy bandgap values decrease with increasing telluride (Te) doping ratio in mixed CuIn0.7Ga0.3(Se1-xTex)2 films. This affects nonlinear characteristics and ultrafast dynamics of amorphous thin films. Ultrafast pump-probe experiments indicated that decreasing of bandgap values with increasing the Te amount switches from the excited state absorption signals to ultrafast bleaching signals. Open aperture Z-scan experiments show that nonlinear absorption properties enhance with decreasing bandgaps values for 65 ps pulse duration at 1064 nm. Highest nonlinear absorption coefficient was found for CuIn0.7Ga0.3Te2 thin film due to having the smallest energy bandgap.

Optical properties change in Te diffused As{sub 50}Se{sub 50} chalcogenide thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naik, Ramakanta; Behera, M.; Panda, R.

2016-05-23

In the present report, we present the effect of Te diffusion into As{sub 50}Se{sub 50} thin film which changes the optical properties. The Te/As{sub 50}Se{sub 50} film was irradiated by a laser beam of 532 nm to study the diffusion mechanism due to photo induced effect. The As{sub 50}Se{sub 50}, Te/As{sub 50}Se{sub 50} films show a completely amorphous nature from X-ray diffraction study. A non direct transition was found for these films on the basis of optical transmission data carried out by Fourier Transform infrared Spectroscopy. The optical bandgap is found to be decreased with Te deposition and photo darkeningmore » phenomena is observed for the diffused film. The change in the optical constants are well supported by the corresponding change in different types of bonds which are being studied by X-ray photoelectron spectroscopy.« less

Surface State-Dominated Photoconduction and THz Generation in Topological Bi2Te2Se Nanowires

PubMed Central

2017-01-01

Topological insulators constitute a fascinating class of quantum materials with nontrivial, gapless states on the surface and insulating bulk states. By revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate that the long surface lifetime of Bi2Te2Se nanowires allows us to access the surface states by a pulsed photoconduction scheme and that there is a prevailing bolometric response of the surface states. The interplay of the surface and bulk states dynamics on the different time scales gives rise to a surprising physical property of Bi2Te2Se nanowires: their pulsed photoconductance changes polarity as a function of laser power. Moreover, we show that single Bi2Te2Se nanowires can be used as THz generators for on-chip high-frequency circuits at room temperature. Our results open the avenue for single Bi2Te2Se nanowires as active modules in optoelectronic high-frequency and THz circuits. PMID:28081604

Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures.

PubMed

Chen, Mingyang; Chen, Xiaoyu; Yang, Huan; Du, Zengyi; Wen, Hai-Hu

2018-06-01

Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi 2 Se 3 or Bi 2 Te 3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect-induced superconductivity in the Bi 2 Te 3 thin film on top of the iron-based superconductor FeTe 0.55 Se 0.45 . By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ 4 y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi 2 Te 3 /FeTe 0.55 Se 0.45 heterostructures.

Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures

PubMed Central

Du, Zengyi

2018-01-01

Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi2Se3 or Bi2Te3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect–induced superconductivity in the Bi2Te3 thin film on top of the iron-based superconductor FeTe0.55Se0.45. By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ4y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi2Te3/FeTe0.55Se0.45 heterostructures. PMID:29888330

α-ScVSe2O8, β-ScVSe2O8, and ScVTe2O8: new quaternary mixed metal oxides composed of only second-order Jahn-Teller distortive cations.

PubMed

Kim, Yeong Hun; Lee, Dong Woo; Ok, Kang Min

2013-10-07

Three new quaternary scandium vanadium selenium/tellurium oxides, α-ScVSe2O8, β-ScVSe2O8, and ScVTe2O8 have been synthesized through hydrothermal and standard solid-state reactions. Although all three reported materials are stoichiometrically similar, they exhibit different crystal structures: α-ScVSe2O8 has a three-dimensional framework structure consisting of ScO6, VO6, and SeO3 groups. β-ScVSe2O8 reveals another three-dimensional framework composed of ScO7, VO5, and SeO3 polyhedra. ScVTe2O8 shows a layered structure with ScO6, VO4, and TeO4 polyhedra. Interestingly, the constituent cations, that is, Sc(3+), V(5+), Se(4+), and Te(4+) are all in a distorted coordination environment attributable to second-order Jahn-Teller (SOJT) effects. Complete characterizations including infrared spectroscopy, elemental analyses, thermal analyses, dipole moment calculation, and the magnitudes of out-of-center distortions for the compounds are reported. Transformation reactions suggest that α-ScVSe2O8 may change to β-ScVSe2O8, and then to Sc2(SeO3)3·H2O under hydrothermal conditions.

Raman characterization of a new Te-rich binary compound: CdTe2.

PubMed

Rousset, Jean; Rzepka, Edouard; Lincot, Daniel

2009-04-02

Structural characterization by Raman spectroscopy of CdTe thin films electrodeposited in acidic conditions is considered in this work. This study focuses on the evolution of material properties as a function of the applied potential and the film thickness, demonstrating the possibility to obtain a new Te-rich compound with a II/VI ratio of 1/2 under specific bath conditions. Raman measurements carried out on etched samples first allow the elimination of the assumption of a mixture of phases CdTe + Te and tend to confirm the formation of the CdTe(2) binary compound. The signature of this phase on the Raman spectrum is the increase of the LO band intensity compared to that obtained for the CdTe. The influence of the laser power is also considered. While no effect is observed on CdTe films, the increase of the incident irradiation power leads to the decomposition of the CdTe(2) compound into two more stable phases namely CdTe and Te.

Syntheses and structural characterization of vanado-tellurites and vanadyl-selenites: SrVTeO{sub 5}(OH), Cd{sub 2}V{sub 2}Te{sub 2}O{sub 11}, Ca{sub 3}VSe{sub 4}O{sub 13}·H{sub 2}O and Ba{sub 2}VSe{sub 3}O{sub 10}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Konatham, Satish; Vidyasagar, Kanamaluru, E-mail: kvsagar@iitm.ac.in

Four new quaternary vanado-tellurites and vanadyl-selenites, namely, SrVTeO{sub 5}(OH)(1), Cd{sub 2}V{sub 2}Te{sub 2}O{sub 11}(2), Ca{sub 3}VSe{sub 4}O{sub 13}·H{sub 2}O(3) and Ba{sub 2}VSe{sub 3}O{sub 10}(4) have been synthesized and structurally characterized by single crystal X-ray diffraction. The oxidation state of vanadium is +5 in tellurites 1 and 2 and +4 in selenites 3 and 4. The structures of SrVTeO{sub 5}(OH)(1) and Cd{sub 2}V{sub 2}Te{sub 2}O{sub 11}(2) compounds consist of (VTeO{sub 5}(OH)){sup 2-} and (V{sub 2}Te{sub 2}O{sub 11}){sup 4-}anionic chains respectively, which are built from tetrahedral VO{sub 4} and disphenoidal TeO{sub 4} moieties. Similarly the structures of Ca{sub 3}VSe{sub 4}O{sub 13}·H{sub 2}O(3)more » and Ba{sub 2}VSe{sub 3}O{sub 10}(4) respectively contain (VSe{sub 2}O{sub 7}){sup 2-} and (VSe{sub 3}O{sub 10}){sup 4-} anionic chains, which are made up of octahedral VO{sub 6} and pyramidal SeO{sub 3} units. Compounds 1 and 3 have been characterized by thermogravimetric and infrared spectroscopic methods. Compounds 1 and 2 are wide band gap semiconductors. - Graphical abstract: Ca{sub 3}VSe{sub 4}O{sub 13}·H{sub 2}O and Ba{sub 2}VSe{sub 3}O{sub 10} compounds contain (VSe{sub 2}O{sub 7}){sup 2-} and (VSe{sub 3}O{sub 10}){sup 4-} chains. - Highlights: • Four new vanado-tellurites and vanadyl-selenites are synthesized. • Their structural features are different. • The vanado-tellurites are wide band gap semiconductors.« less

The geological and microbiological controls on the enrichment of Se and Te in sedimentary rocks

NASA Astrophysics Data System (ADS)

Bullock, Liam; Parnell, John; Armstrong, Joseph; Boyce, Adrian; Perez, Magali

2017-04-01

Selenium (Se) and tellurium (Te) have become elements of high interest, mainly due to their photovoltaic and photoconductive properties, and can contaminate local soils and groundwater systems during mobilisation. Due to their economic and environmental significance, it is important to understand the processes that lead to Se- and Te-enrichment in sediments. The distribution of Se and Te in sedimentary environments is primarily a function of redox conditions, and may be transported and concentrated by the movement of reduced fluids through oxidised strata. Se and Te concentrations have been measured in a suite of late Neoproterozoic Gwna Group black shales (UK) and uranium red bed (roll-front) samples (USA). Due to the chemical affinity of Se and sulphur (S), variations in the S isotopic composition of pyrite have also been measured in order to provide insights into their origin. Scanning electron microscopy of pyrite in the black shales shows abundant inclusions of the lead selenide mineral clausthalite. The data for the black shale samples show marked enrichment in Te and Se relative to crustal mean and several hundreds of other samples processed through our laboratory. While Se levels in sulphidic black shales are typically below 5 ppm, the measured values of up to 116 ppm are remarkable. The Se enrichment in roll-fronts (up to 168 ppm) is restricted to a narrow band of alteration at the interface between the barren oxidised core, and the highly mineralised reduced nose of the front. Te is depleted in roll-fronts with respect to the continental crust and other geological settings and deposits. S isotope compositions for pyrite in both the black shales and roll-fronts are very light and indicate precipitation by microbial sulphate reduction, suggesting that Se was microbially sequestered. Results show that Gwna Group black shales and U.S roll-front deposits contain marked elemental enrichments (particularly Se content). In Gwna Group black shales, Se and Te were sequestered out of seawater into pyritic shales at a higher rate than into crusts. Se enrichment in roll-fronts relates to the initial mobilisation of trace elements in oxidised conditions, and later precipitation downgradient in reduced conditions. Results highlight the potential for sedimentary types of Se- and Te-bearing deposits. The enrichment of elements of high value for future technologies in sedimentary rocks deserve careful assessment for potential future resources, and should be monitored during exploration and mobilisation due to the potential contamination effects. This work forms part of the NERC-funded 'Security of Supply of Mineral Resources' project, which aims to detail the science needed to sustain the security of supply of strategic minerals in a changing environment.

High-Output-Power Densities from MBE-grown n- and p-Type PbTeSe-based Thermoelectrics via Improved Contact Metallization

DTIC Science & Technology

2011-10-19

is uncertain . . The results of these various studies seem consistent that the Fermi . level at the surface of PbTe or Pbi -xSnxTe is not inherently...Both sides: ~T=220"C n-type IS am P!!I~:Ii SE+l9 n++ 200 nm Til Device P=30W/cm2 1001!!!1 Pbi ~Se 3.5E+I8 a+ NDLS ISO am PI!I!::Bi SE+19 a++ 200nmNil

Copper-tuned magnetic order and excitations in iron-based superconductors Fe1+yTe1-xSex

NASA Astrophysics Data System (ADS)

Wen, Jinsheng; Xu, Zhijun; Xu, Guangyong; Lumsden, Mark; Matsuda, Masaaki; Valdivia, Patrick; Bourret, Edith; Lee, Dunghai; Gu, Genda; Tranquada, John; Birgeneau, Robert

2012-02-01

We report neutron scattering results on the Cu-substitution effects in the iron-based superconductors, Fe1+yTe1-xSex. In the parent compound, it is found that Cu drives the low-temperature magnetic ground state from long-range commensurate antiferromagnetic order in Fe1.06TeCu0.04 to short-range incommensurate order in FeTeCu0.1. In the former sample, the structural and magnetic ordering temperature is 40 K; in FeTeCu0.1, the structural phase transition is not obvious and a transition to the spin-glass state is found at 22 K. Cu suppresses superconductivity in FeTe0.5Se0.5---Tc is reduced to 7 K with a 2% Cu doping, and no superconductivity is found in the 10% Cu-doped sample. In the meantime, the intensity and energy of the resonance mode are suppressed in the 2% Cu-doped sample, while there is no resonance in the non-superconducting sample. Besides, the low-temperature magnetic excitation spectra are distinct for these two samples, with the superconducting one having an ``hour-glass" shape and the other one having a ``waterfall" shape. Our results provide further insights on the interplay between magnetism and superconductivity in the iron-based superconductors.

Fluorescence properties of alloyed ZnSeS quantum dots overcoated with ZnTe and ZnTe/ZnS shells

NASA Astrophysics Data System (ADS)

Adegoke, Oluwasesan; Mashazi, Philani; Nyokong, Tebello; Forbes, Patricia B. C.

2016-04-01

Fluorescent alloyed ternary ZnSeS quantum dots (QDs) have been synthesized via the pyrolysis of organometallic precursors. The effects of passivation of ZnTe and ZnTe/ZnS shells on the optical properties of the ternary alloyed ZnSeS core have been studied. A ligand exchange reaction using L-cysteine as a capping ligand was used to obtain water-soluble nanocrystals. The nanocrystals were each characterized by UV/vis absorption and fluorescence spectroscopy, transmission electron microscopy, X-ray diffractometry (XRD) and X-ray photoelectron spectroscopy (XPS). The photoluminescence (PL) quantum yield (QY) of alloyed ZnSeS QDs was 14% and this value increased to 27% when ZnTe was overcoated around the surface but further coating with a ZnS shell decreased the PL QY slightly to 24%. This implies that ZnTe shell suppressed non-radiative recombination exciton states in the alloyed core while further layering with a ZnS shell offered no further improvement in suppressing the defect states. XPS analysis confirmed the presence of the first shell layering but showed a weakened intensity signal of S (2p) and Se (3d) for the ZnSeS/ZnTe/ZnS QDs. Our work demonstrates for the first time that shell passivation of alloyed Zn-based QDs can offer improved optical properties. We hope the optical information presented in this work will be useful in the selection of alloyed Zn-based QDs appropriate for the intended application.

Aqueous-Processed Inorganic Thin-Film Solar Cells Based on CdSe(x)Te(1-x) Nanocrystals: The Impact of Composition on Photovoltaic Performance.

PubMed

Zeng, Qingsen; Chen, Zhaolai; Zhao, Yue; Du, Xiaohang; Liu, Fangyuan; Jin, Gan; Dong, Fengxia; Zhang, Hao; Yang, Bai

2015-10-21

Aqueous processed nanocrystal (NC) solar cells are attractive due to their environmental friendliness and cost effectiveness. Controlling the bandgap of absorbing layers is critical for achieving high efficiency for single and multijunction solar cells. Herein, we tune the bandgap of CdTe through the incorporation of Se via aqueous process. The photovoltaic performance of aqueous CdSexTe1-x NCs is systematically investigated, and the impacts of charge generation, transport, and injection on device performance for different compositions are deeply discussed. We discover that the performance degrades with the increasing Se content from CdTe to CdSe. This is mainly ascribed to the lower conduction band (CB) of CdSexTe1-x with higher Se content, which reduces the driving force for electron injection into TiO2. Finally, the performance is improved by mixing CdSexTe1-x NCs with conjugated polymer poly(p-phenylenevinylene) (PPV), and power conversion efficiency (PCE) of 3.35% is achieved based on ternary NCs. This work may provide some information to further optimize the aqueous-processed NC and hybrid solar cells.

Thermoelectric transport properties of PbTe-based composites incorporated with Cu2Se nano-inclusions

NASA Astrophysics Data System (ADS)

Guo, Haifeng; Xin, Hongxing; Qin, Xiaoying; Jian, Zhang; Li, Di; Li, Yuanyue; Li, Cong

2016-02-01

Thermoelectric transport properties of Lead telluride (PbTe)-based composites incorporated with Cuprous selenide (Cu2Se) nano-inclusions were investigated from 300 K to 800 K. Here, except for the transition from p-type to n-type conduction that occurs in pristine PbTe at ~530 K due to the difference of mobility between thermally electron and hole at high temperature, another transition from p-type to n-type conduction at 300 K with an increasing proportion of Cu2Se could be due to the donor levels introduced by defects and unsaturated bonds at the interfaces. Moreover, by incorporating a small proportion (5 vol.%) of Cu2Se nanoparticles into the PbTe matrix to form nano-composites, both a reduction (~55%) in lattice thermal conductivity and an enhanced electrical conductivity compared with that of pristine PbTe are obtained, which allows the thermoelectric power factor to reach a larger value (~11.2 μW cm-1 K-2). Consequently, a maximum value ZT  =  0.91 is obtained at 760 K in the PbTe-5 vol.% Cu2Se sample.

Suppression of superconductivity in Fe chalcogenides by annealing: A reverse effect to pressure

NASA Astrophysics Data System (ADS)

Tong, Peng; Louca, Despina; Llobet, Anna; Yan, Jiaqiang; Arita, Ryotaro

2012-02-01

Superconductivity in FeTe1-xSex can be controlled by annealing, in the absence of extrinsic influences. Using neutron diffraction, we show that TC sensitively depends on the atomic configurations of the Te and Se ions. Low temperature annealing not only homogenizes the Te and Se ion distribution as previously observed, it suppresses TC because of changes in the chalcogen ions' z-parameter. In particular, the height of Te from the Fe basal plane is much reduced while that for Se shows a modest increase. These trends are reverse of the effects induced by pressure.

Influence of Te and Se doping on ZnO films growth by SILAR method

NASA Astrophysics Data System (ADS)

Güney, Harun; Duman, Ćaǧlar

2016-04-01

The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.

Influence of Te and Se doping on ZnO films growth by SILAR method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Güney, Harun, E-mail: harunguney25@hotmail.com; Duman, Çağlar, E-mail: caglarduman@erzurum.edu.tr

2016-04-18

The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness ofmore » the material varied with Se and/or Te and varying concentrations.« less

Composition Dependence of the Hydrostatic Pressure Coefficients of the Bandgap of ZnSe(1-x)Te(x) Alloys

NASA Technical Reports Server (NTRS)

Wu, J.; Yu, K. M.; Walukiewicz, W.; Shan, W.; Ager, J. W., III; Haller, E. E.; Miotkowski, I.; Ramdas, A. K.; Su, Ching-Hua

2003-01-01

Optical absorption experiments have been performed using diamond anvil cells to measure the hydrostatic pressure dependence of the fundamental bandgap of ZnSe(sub 1-xTe(sub x) alloys over the entire composition range. The first and second-order pressure coefficients are obtained as a function of composition. Starting from the ZnSe side, the magnitude of both coefficients increases slowly until x approx. 0.7, where the ambient-pressure bandgap reaches a minimum. For larger values of x the coefficients rapidly approach the values of ZnTe. The large deviations of the pressure coefficients from the linear interpolation between ZnSe and ZnTe are explained in terms of the band anticrossing model.

Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1-xMgxSeyTe1-y layers grown at various substrate temperatures or dopant transport rates by MOVPE

NASA Astrophysics Data System (ADS)

Nishio, Mitsuhiro; Saito, Katsuhiko; Urata, Kensuke; Okamoto, Yasuhiro; Tanaka, Daichi; Araki, Yasuhiro; Abiru, Masakatsu; Mori, Eiichiro; Tanaka, Tooru; Guo, Qixin

2015-03-01

The growth of undoped and phosphorus (P)-doped Zn1-xMgxSeyTe1-y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out. The compositions of Mg and Se, surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1-xMgxSeyTe1-y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1-xMgxSeyTe1-y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality.

Flight Experiments of Physical Vapor Transport of ZnSe: Growth of Crystals in Various Convective Conditions

NASA Technical Reports Server (NTRS)

Su, Ching-Hua

2015-01-01

A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). The flight experiment will conduct crystal growths of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT). The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds, especially the effects of different growth orientations related to gravity direction on the grown crystals.

A Micro-Raman Study of Exfoliated Few-Layered n-Type Bi2Te2.7Se0.3 (Postprint)

DTIC Science & Technology

2017-11-28

filtering process. 15. SUBJECT TERMS thermoelectric (TE); bulk n-type Bi2Te2.7Se0.3; chemical or mechanical exfoliation; densification; restacking...enhanced TE properties via the energy filtering process. Bulk pristine (undoped) and doped Bi2Te3 are some of the most efficient room temperature...and charged defect scattering dominates. Puneet et al. attributed the increase in n to selective filtering of charge carriers by positively charged

Low Temperature Photoluminescence of PVT Grown ZnSe and ZnSeTe

NASA Technical Reports Server (NTRS)

Wang, Ling Jun; Su, Ching-Hua; Lehoczky, S. L.

1999-01-01

ZnSe and ZnSeTe single crystals were grown by physical vapor transport (PVT) technique horizontally and vertically. The grown ZnSe and ZnSeTe single crystals were characterized by low temperature photoluminescence at 5 to 10 K using the 3.4 eV emission of an argon laser. The intensity of the sharp near band edge defect lines at 2.799, 2.783 eV and the intrinsic free exciton line at 2.802 eV were mapped on various crystal surfaces with different orientations to the gravitational field. The results show the effects of gravity vector orientation on the defect segregation. Comparison of the photoluminescence spectra of the ZeSe crystal before and after annealing in the Zn vapor shows that the 2.783 eV line of ZnSe crystal is related to the zinc vacancy. The photoluminescence spectra of the ternary ZnSeTe crystal were characterized by a single broad band from 2.2 to 2.4 eV, with a Full Width at Half Maximum (FWHM) of about 100 meV. The temperature dependence of the peak position and intensity were determined from 7 to 150 K.

Effect of Se substitution on the phase change properties of Ge2Sb2Te5

NASA Astrophysics Data System (ADS)

Shekhawat, Roopali; Rangappa, Ramanna; Gopal, E. S. R.; Ramesh, K.

2018-05-01

Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memory(PCRAM) applications. Under high electric field, thin films of amorphous GST undergo a phase change from amorphous to crystalline with a high contrast in electrical resistivity (about 103). The phase change is between amorphous and metastable NaCl structure occurs at about 150°C and not to the stable hexagonal phase which occurs at a high temperature (> 250 °C). In GST, about 50 % of Te substituted by Se (Ge2Sb2Te2.5Se2.5) is found to increase the contrast in electrical resistivity by 7 orders of magnitude (about 4 orders of magnitude higher than GST). The phase transition in Se added GST also found to be between amorphous and the stable hexagonal structure. The threshold voltage at which the Ge2Sb2Te2.5Se2.5 switches to the high conducting state increases to 9V as compared to 2V in GST. Interestingly, the threshold current decrease to 1mA as compared to 1.8mA in GST indicating the Se substitution reduces the power needed for switching between the low and high conducting states. The reduction in power needed for phase change, high contrast in electrical resistivity with high thermal stability makes Ge2Sb2Te2.5Se2.5 as a better candidate for PCRAM.

Stellar laboratories . IX. New Se v, Sr iv-vii, Te vi, and I vi oscillator strengths and the Se, Sr, Te, and I abundances in the hot white dwarfs G191-B2B and RE 0503-289

NASA Astrophysics Data System (ADS)

Rauch, T.; Quinet, P.; Knörzer, M.; Hoyer, D.; Werner, K.; Kruk, J. W.; Demleitner, M.

2017-10-01

Context. To analyze spectra of hot stars, advanced non-local thermodynamic equilibrium (NLTE) model-atmosphere techniques are mandatory. Reliable atomic data is crucial for the calculation of such model atmospheres. Aims: We aim to calculate new Sr iv-vii oscillator strengths to identify for the first time Sr spectral lines in hot white dwarf (WD) stars and to determine the photospheric Sr abundances. To measure the abundances of Se, Te, and I in hot WDs, we aim to compute new Se v, Te vi, and I vi oscillator strengths. Methods: To consider radiative and collisional bound-bound transitions of Se v, Sr iv - vii, Te vi, and I vi in our NLTE atmosphere models, we calculated oscillator strengths for these ions. Results: We newly identified four Se v, 23 Sr v, 1 Te vi, and three I vi lines in the ultraviolet (UV) spectrum of RE 0503-289. We measured a photospheric Sr abundance of 6.5+ 3.8-2.4× 10-4 (mass fraction, 9500-23 800 times solar). We determined the abundances of Se (1.6+ 0.9-0.6× 10-3, 8000-20 000), Te (2.5+ 1.5-0.9× 10-4, 11 000-28 000), and I (1.4+ 0.8-0.5× 10-5, 2700-6700). No Se, Sr, Te, and I line was found in the UV spectra of G191-B2B and we could determine only upper abundance limits of approximately 100 times solar. Conclusions: All identified Se v, Sr v, Te vi, and I vi lines in the UV spectrum of RE 0503-289 were simultaneously well reproduced with our newly calculated oscillator strengths. Based on observations with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS5-26666. Based on observations made with the NASA-CNES-CSA Far Ultraviolet Spectroscopic Explorer. Full Tables A.15 to A.21 are only available via the German Astrophysical Virtual Observatory (GAVO) service TOSS (http://dc.g-vo.org/TOSS).

Characterization and In-Situ Monitoring of ZnSe Crystal Growth by Seeded PVT for Microgravity Applications

NASA Technical Reports Server (NTRS)

Feth, Shari T.

2001-01-01

Crystal growth from the vapor phase continues to play a significant role in the production of II-VI semiconductor compounds (ZnO, ZnTe, CdTe, etc.) and SiC. As compared to melt growth methods (where available) the advantages are: (1) lower growth temperature(s); (2) reduction in defect concentration; (3) additional purification; and (4) enhanced crystal perfection. A powerful tool in determining the mechanism of PVT is microgravity. Under normal gravity conditions the transport mechanism is a superposition of diffusive and convective fluxes. Microgravity offers the possibility of studying the transport properties without the influence of convective effects. Research on the crystal growth of ZnSe by PVT (P.I.: Su of NASA/MSFC) will help to clarify the effects of convection on crystal growth. A crystal growth furnace with in-situ and real time optical monitoring capabilities was constructed and used to monitor the vapor composition and growing crystal surface morphology during the PVT growth of ZnSe. Using photoluminescence and SIMS, ex-situ, the incorporation of point defects (Zn vacancy) and impurities was found to be correlated to the gravity vector due to the influence of the convective flow. A summary of the results to date will be presented.

Comparisons of plutonium, thorium, and cerium tellurite sulfates.

PubMed

Lin, Jian; Cross, Justin N; Diwu, Juan; Meredith, Nathan A; Albrecht-Schmitt, Thomas E

2013-04-15

The hydrothermal reaction of PuCl3 or CeCl3 with TeO2 in the presence of sulfuric acid under the comparable conditions results in the crystallization of Pu(TeO3)(SO4) or Ce2(Te2O5)(SO4)2, respectively. Pu(TeO3)(SO4) and its isotypic compound Th(TeO3)(SO4) are characterized by a neutral layer structure with no interlamellar charge-balancing ions. However, Ce2(Te2O5)(SO4)2 possesses a completely different dense three-dimensional framework. Bond valence calculation and UV-vis-NIR spectra indicate that the Ce compound is trivalent whereas the Pu and Th compounds are tetravalent leading to the formation of significantly different compounds. Pu(TeO3)(SO4), Th(TeO3)(SO4), and Ce2(Te2O5)(SO4)2 represent the first plutonium/thorium/cerium tellurite sulfate compounds. Our study strongly suggests that the chemistries of Pu and Ce are not the same, and this is another example of the failure of Ce as a surrogate.

Chloroform molecules donate hydrogen bonds to S, Se, and Te acceptors: evidence from a published series of terminal chalcogenido complexes

NASA Astrophysics Data System (ADS)

Steiner, Thomas

1998-06-01

Structural data on three chalcogenido complexes published by M. C. Kuchta and G. Parkin, J. Chem. Soc., Chem. Commun. (1994) 1351, provide sound evidence that chloroform molecules can donate hydrogen bonds to S, Se and Te acceptors. This is the first documented example of CHżTe hydrogen bonding. The HżTe distance is only 2.67 Å.

Principle of maximum entanglement entropy and local physics of strongly correlated materials.

PubMed

Lanatà, Nicola; Strand, Hugo U R; Yao, Yongxin; Kotliar, Gabriel

2014-07-18

We argue that, because of quantum entanglement, the local physics of strongly correlated materials at zero temperature is described in a very good approximation by a simple generalized Gibbs distribution, which depends on a relatively small number of local quantum thermodynamical potentials. We demonstrate that our statement is exact in certain limits and present numerical calculations of the iron compounds FeSe and FeTe and of the elemental cerium by employing the Gutzwiller approximation that strongly support our theory in general.

Conversion of alkanes to organoseleniums and organotelluriums

DOEpatents

Periana, Roy A.; Konnick, Michael M.; Hashiguchi, Brian G.

2016-11-29

The invention provides processes and materials for the efficient and costeffective functionalization of alkanes and heteroalkanes, comprising contacting the alkane or heteroalkane and a soft oxidizing electrophile comprising Se(VI) or Te(VI), in an acidic medium, optionally further comprising an aprotic medium, which can be carried out at a temperature of less than 300 C. Isolation of the alkylselenium or alkyltellurium intermediate allows the subsequent conversion to products not necessarily compatible with the initial reaction conditions, such as amines, stannanes, organosulfur compounds, acyls, halocarbons, and olefins.

To study the linear and nonlinear optical properties of Se-Te-Bi-Sn/PVP (polyvinylpyrrolidone) nanocomposites

NASA Astrophysics Data System (ADS)

Tyagi, Chetna; Yadav, Preeti; Sharma, Ambika

2018-05-01

The present work reveals the optical study of Se82Te15Bi1.0Sn2.0/polyvinylpyrrolidone (PVP) nanocomposites. Bulk glasses of chalcogenide was prepared by well-known melt quenching technique. Wet chemical technique is proposed for making the composite of Se82Te15Bi1.0Sn2.0 and PVP polymer as it is easy to handle and cost effective. The composites films were made on glass slide from the solution of Se-Te-Bi-Sn and PVP polymer using spin coating technique. The transmission as well as absorbance is recorded by using UV-Vis-NIR spectrophotometer in the spectral range 350-700 nm. The linear refractive index (n) of polymer nanocomposites are calculated by Swanepoel approach. The linear refractive index (n) PVP doped Se82Te15Bi1.0Sn2.0 chalcogenide is found to be 1.7. The optical band gap has been evaluated by means of Tauc extrapolation method. Tichy and Ticha model was utilized for the characterization of nonlinear refractive index (n2).

Surface state-dominated photoconduction and THz-generation in topological Bi2Te2Se-nanowires

NASA Astrophysics Data System (ADS)

Seifert, Paul; Vaklinova, Kristina; Kern, Klaus; Burghard, Marko; Holleitner, Alexander

Topological insulators constitute a fascinating class of quantum materials with non-trivial, gapless states on the surface and trivial, insulating bulk states. In revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate that the long surface lifetime of Bi2Te2Se-nanowires allows to access the surface states by a pulsed photoconduction scheme and that there is a prevailing bolometric response of the surface states. The interplay of the surface state dynamics on the different timescales gives rise to a surprising physical property of Bi2Te2Se-nanowires: their pulsed photoconductance changes polarity as a function of laser power. Moreover, we show that single Bi2Te2Se-nanowires can be used as THz-generators for on-chip high-frequency circuits at room temperature. Our results open the avenue for single Bi2Te2Se-nanowires as active modules in optoelectronic high-frequency and THz-circuits. We acknowledge financial support by the ERC Grant NanoReal (n306754).

Interfacial Reaction and Shear Strength of SnAgCu/Ni/Bi2Te3-Based TE Materials During Aging

NASA Astrophysics Data System (ADS)

Jing, Hongyang; Li, Yuan; Xu, Lianyong; Han, Yongdian; Lu, Guoquan; Zhang, Hao

2015-12-01

As a diffusion barrier layer, Ni is widely applied in power electronics packaging, especially in thermoelectric devices. This paper presents the variation of Ni diffusion barrier layer during aging and failure mechanisms of thermoelectric device joints. The thermoelectric joint consists of Sn96.5Ag3.0Cu0.5 (SAC305) solder and Bi2Te3-based thermoelectric materials such as Bi0.5Sb1.5Te3 and Bi1.8Sb0.2Se0.15Te2.85 during service. The result shows that with the increasing aging time, Ni layer was constantly consumed by SAC305 and Bi2Te3-based thermoelectric materials simultaneously. The reaction products are (Cu,Ni)6Sn5 and NiTe or Ni(Bi,Te), respectively. Besides, the shear strength of SAC305/Bi0.5Sb1.5Te3 joint or SAC305/Bi1.8Sb0.2Se0.15Te2.85 joint gets gradually decreased and thermoelectric conversion performance gets worse. Meantime, the different failure mechanisms are also compared between SAC305/Bi0.5Sb1.5Te3 couple joints and SAC305/Bi1.8Sb0.2Se0.15Te2.85 couple joints.

Compositional homogeneity and X-ray topographic analyses of CdTe xSe 1-x grown by the vertical Bridgman technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.

2015-02-01

We grew CdTe xSe 1-x crystals with nominal Se concentrations of 5%, 7%, and 10% by the vertical Bridgman technique, and evaluated their compositional homogeneity and structural quality at the NSLS’ X-ray fluorescence and white beam X-ray topography beam lines. Both X-ray fluorescence and photoluminescence mapping revealed very high compositional homogeneity of the CdTe xSe 1-x crystals. Here, we noted that those crystals with higher concentrations of Se were more prone to twinning than those with a lower content. The crystals were fairly free from strains and contained low concentrations of sub-grain boundaries and their networks.

L-dependence of low energy spin excitations in FeTe/Se superconductors

NASA Astrophysics Data System (ADS)

Xu, Guangyong; Xu, Zhijun; Schneeloch, John; Wen, Jinsheng; Winn, Barry; Zhao, Yang; Birgeneau, Robert; Gu, Genda; Tranquada, John

We will present neutron scattering measurements on low energy magnetic excitations from FeTe1-xSex (``11'' system) samples. Our work shows that the low energy magnetic excitations are dominated by 2D correlations in the superconducting (SC) compound at low temperature, with the L-dependence well described by the Fe magnetic form factor. However, at temperatures much higher than TC, the magnetic excitations become more three-dimensional with a clear change in the L-dependence. The low energy magnetic excitations from non-superconducting (NSC) samples, on the other hand, always exhibit three-dimensional features for the entire temperature range of our measurements. Our results suggest that in additional to in-plane correlations, the inter-plane spin correlations are also coupled to the superconducting properties in the ``11'' system.

Formation of randomly distributed nano-tubes, -rods and -plates of n-type and p-type bismuth telluride via molecular legation

NASA Astrophysics Data System (ADS)

Ram, Jasa; Ghosal, Partha

2015-08-01

Randomly distributed nanotubes, nanorods and nanoplates of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 ternary compounds have been synthesized via a high yield solvo-thermal process. Prior to solvo-thermal heating at 230 °C for crystallization, we ensured molecular legation in room temperature reaction by complete reduction of precursor materials, dissolved in ethylene glycol and confirmed it by replicating Raman spectra of amorphous and crystalline materials. These nanomaterials have also been characterized using XRD, FE-SEM, EDS and TEM. Possible formation mechanism is also discussed. This single process will enable development of thermoelectric modules and random distribution of diverse morphology will be beneficial in retaining nano-crystallite sizes.

Suppression of superconductivity in Fe chalcogenides by annealing: A reverse effect to pressure

NASA Astrophysics Data System (ADS)

Louca, Despina; Yan, Jiaqiang; Llobet, Anna; Arita, Ryotaro

2011-08-01

Superconductivity in FeTe1-xSex can be controlled by annealing in the absence of extrinsic influences. Using neutron diffraction, we show that the superconducting transition temperature (TC) sensitively depends on the atomic configurations of the Te and Se ions. Low-temperature annealing not only homogenizes the Te and Se ion distribution, it suppresses TC because of changes in the chalcogen ion’s z parameter. In particular, the height of Te from the Fe basal plane is much reduced while that for Se shows a modest increase. These trends are the reverse of the effects induced by pressure.

Novel natural super-lattice materials with low thermal conductivity for thermoelectric applications: A first principles study

NASA Astrophysics Data System (ADS)

Sreeparvathy, P. C.; Kanchana, V.

2017-12-01

A systematic study which reveals the low thermal conductivity and high thermopower on a series of natural superlattice structures in the form BaXFCh (X: Cu, Ag, Ch: S, Se, Te), LaXSO (X: Cu, Ag) and SrCuTeF are presented. Low thermal conductivity is predicted by combining elastic constants and few well established models. The electronic properties reveal the highly two dimensional nature of band structure in the valence band, and this is confirmed through effective mass calculations. The huge difference in effective mass along different crystallographic directions in valence band introduces anisotropy in the transport properties for hole doping, and 'a' axis is found to be more favourable. In addition to these, the parameter A (S2σ/τT/κe /τ), which can decouple the relaxation time is also calculated, and it reveals the possibility of good thermoelectric properties in these compounds. Our results are comparable with prototype thermoelectric materials, and show better values than traditional TE materials.

Telluride Misfit Layer Compounds: [(PbTe) 1.17 ] m (TiTe 2 ) n

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, Daniel B.; Beekman, Matt; Disch, Sabrina

Telluride misfit layer compounds are reported for the first time. These compounds were synthesized using a novel approach of structurally designing a precursor that would form the desired product upon low-temperature annealing, which allows the synthesis of kinetically stable products that do not appear on the equilibrium phase diagram. Four new compounds of the [(PbTe)1.17]m(TiTe2)n family are reported, and their structures were examined by a variety of X-ray diffraction techniques.

Telluride Misfit Layer Compounds: [(PbTe) 1.17 ] m (TiTe 2 ) n

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, Daniel B.; Beekman, Matt; Disch, Sabrina

2014-04-09

Telluride misfit layer compounds are reported for the first time. These compounds were synthesized using a novel approach of structurally designing a precursor that would form the desired product upon low-temperature annealing, which allows the synthesis of kinetically stable products that do not appear on the equilibrium phase diagram. Four new compounds of the [(PbTe)1.17]m(TiTe2)n family are reported, and their structures were examined by a variety of X-ray diffraction techniques.

Intrinsic Topological Insulator Bi1.5Sb0.5Te3-xSex Thin Crystals

NASA Astrophysics Data System (ADS)

Wang, Wei; Li, Li; Zou, Wenqin; He, Liang; Song, Fengqi; Zhang, Rong; Wu, Xiaoshan; Zhang, Fengming

2015-01-01

The quaternary topological insulator (Bi,Sb)2(Te,Se)3 has demonstrated topological surface states with an insulating bulk. Scientists have identified an optimized composition of Bi1.5Sb0.5Te1.7Se1.3 with the highest resistivity reported. But the physics that drive to this composition remains unclear. Here we report the crystal structure and the magneto-transport properties of Bi1.5Sb0.5Te3-xSex (BSTS) series. A correlation between the structure and the physical properties has been revealed. We found out that within the rhombohedral structure, the composition with most Te substituting Se has the highest resistivity. On the other hand, segregation of other composition phases will introduce much higher bulk concentration.

Converting topological insulators into topological metals within the tetradymite family

NASA Astrophysics Data System (ADS)

Chen, K.-W.; Aryal, N.; Dai, J.; Graf, D.; Zhang, S.; Das, S.; Le Fèvre, P.; Bertran, F.; Yukawa, R.; Horiba, K.; Kumigashira, H.; Frantzeskakis, E.; Fortuna, F.; Balicas, L.; Santander-Syro, A. F.; Manousakis, E.; Baumbach, R. E.

2018-04-01

We report the electronic band structures and concomitant Fermi surfaces for a family of exfoliable tetradymite compounds with the formula T2C h2P n , obtained as a modification to the well-known topological insulator binaries Bi2(Se,Te ) 3 by replacing one chalcogen (C h ) with a pnictogen (P n ) and Bi with the tetravalent transition metals T = Ti, Zr, or Hf. This imbalances the electron count and results in layered metals characterized by relatively high carrier mobilities and bulk two-dimensional Fermi surfaces whose topography is well-described by first-principles calculations. Intriguingly, slab electronic structure calculations predict Dirac-like surface states. In contrast to Bi2Se3 , where the surface Dirac bands are at the Γ point, for (Zr,Hf ) 2Te2 (P,As) there are Dirac cones of strong topological character around both the Γ ¯ and M ¯ points, which are above and below the Fermi energy, respectively. For Ti2Te2P , the surface state is predicted to exist only around the M ¯ point. In agreement with these predictions, the surface states that are located below the Fermi energy are observed by angle-resolved photoemission spectroscopy measurements, revealing that they coexist with the bulk metallic state. Thus this family of materials provides a foundation upon which to develop novel phenomena that exploit both the bulk and surface states (e.g., topological superconductivity).

Electron microscopy of iron chalcogenide FeTe(Se) films

NASA Astrophysics Data System (ADS)

Shchichko, I. O.; Presnyakov, M. Yu.; Stepantsov, E. A.; Kazakov, S. M.; Antipov, E. V.; Makarova, I. P.; Vasil'ev, A. L.

2015-05-01

The structure of Fe1 + δTe1 - x Se x films ( x = 0; 0.05) grown on single-crystal MgO and LaAlO3 substrates has been investigated by transmission and scanning transmission electron microscopy. The study of Fe1.11Te/MgO structures has revealed two crystallographic orientation relationships between the film and substrate. It is shown that the lattice mismatch between the film and substrate is compensated for by the formation of misfit dislocations. The Burgers vector projection is determined. The stresses in the film can partially be compensated for due to the formation of an intermediate disordered layer. It is shown that a FeTe0.5Se0.5 film grown on a LaAlO3 substrate is single-crystal and that the FeTe0.5Se0.5/LaAlO3 interface in a selected region is coherent. The orientation relationships between the film and substrate are also determined for this case.

Multiband nodeless superconductivity near the charge-density-wave quantum critical point in ZrTe 3–xSe x

DOE PAGES

Cui, Shan; He, Lan -Po; Hong, Xiao -Chen; ...

2016-06-09

It was found that selenium doping can suppress the charge-density-wave (CDW) order and induce bulk superconductivity in ZrTe 3. The observed superconducting dome suggests the existence of a CDW quantum critical point (QCP) in ZrTe 3–x Se x near x ≈ 0.04. To elucidate the superconducting state near the CDW QCP, we measure the thermal conductivity of two ZrTe 3–x Se x single crystals (x = 0.044 and 0.051) down to 80 mK. For both samples, the residual linear term κ 0/T at zero field is negligible, which is a clear evidence for nodeless superconducting gap. Furthermore, the field dependencemore » of κ 0/T manifests a multigap behavior. Lastly, these results demonstrate multiple nodeless superconducting gaps in ZrTe 3–x Se x, which indicates conventional superconductivity despite of the existence of a CDW QCP.« less

High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.

2015-02-01

We obtained high-quality CdTe{sub x}Se{sub 1−x} (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ∼1.0. This high uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing highermore » efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd{sub x}Zn{sub 1−x}Te (CdZnTe or CZT)« less

High Compositional Homogeneity of CdTe xSe 1-x Crystals Grown by the Bridgman Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.

2015-02-03

We obtained high-quality CdTe xSe 1-x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The resulting compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ~1.0. This uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing highermore » efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd xZn 1-xTe (CdZnTe or CZT).« less

The Origin and Time Dependence of the Amount and Composition of Non-Constituent Gases Present in Crystal Growth Systems

NASA Technical Reports Server (NTRS)

Palosz, Witold

1998-01-01

Presence of different, non-constituent gases may be a critical factor in crystal growth systems. In Physical Vapor Transport processes the cras(es) can be used intentionally (to prevent excessively high, unstable growth conditions), or can evolve unintentionally during the course of the process (which may lead to undesired reduction in the -rowth rate). In melt growth, particularly under low gravity conditions (reduced hydrostatic pressure) the gas present in the system may contribute to formation of voids in the growing crystals and even to a separation of the crystal and the liquid phase [1]. On the other hand, some amount of gas may facilitate 'contactless' crystal growth particularly under reduced gravity conditions [2 - 6]. Different non-constituent gases may be present in growth ampoules, and their amount and composition may change during the crystallization process. Some gases can appear even in empty ampoules sealed originally under high vacuum: they may diffuse in from the outside, and/or desorb from the ampoule walls. Residual gases can also be generated by the source materials: even very high purity commercial elements and compounds may contain trace amounts of impurities, particularly oxides. The oxides may have low volatilities themselves but their reaction with other species, particularly carbon and hydrogen, may produce volatile compounds like water or carbon oxides. The non-constituent gases, either added initially to the system or evolved during the material processing, may diffuse out of the ampoule during the course of the experiment. Gases present outside (e.g. as a protective atmosphere or thermal conductor) may diffuse into the ampoule. In either case the growth conditions and the quality of the crystals may be affected. The problem is of a particular importance in sealed systems where the amount of the gases cannot be directly controlled. Therefore a reasonable knowledge and understanding of the origin, composition, magnitude, and change with time of gases present in sealed ampoules may be important for a meaningful control and interpretation of crystal growth processes. This problem is of a particular importance for processing of electronic materials in space because (i) safety considerations require using sealed systems only, and (ii) high cost of crystal growth experiments in microgravity calls for a throughout, accurate description of the processing conditions necessary for a meaningful, efficient, and conclusive interpretation of the space results. In this paper we present the results of our extensive studies on gases in closed crystal growth systems which include: (a) Degassing properties of fused silica; (b) Generation of inert gases by source materials (CdTe, ZnTe, CdZnTe, ZnSe, PbTe, PbSe, PbSeTe); (c) Diffusive cas losses from silica glass ampoules.

L-cysteine-capped core/shell/shell quantum dot-graphene oxide nanocomposite fluorescence probe for polycyclic aromatic hydrocarbon detection.

PubMed

Adegoke, Oluwasesan; Forbes, Patricia B C

2016-01-01

Environmental pollutants, such as the polycyclic aromatic hydrocarbons (PAHs), become widely distributed in the environment after emission from a range of sources, and they have potential biological effects, including toxicity and carcinogenity. In this work, we have demonstrated the analytical potential of a covalently linked L-cysteine-capped CdSeTe/ZnSe/ZnS core/shell/shell quantum dot (QD)-graphene oxide (GO) nanocomposite fluorescence probe to detect PAH compounds in aqueous solution. Water-soluble L-cysteine-capped CdSeTe/ZnSe/ZnS QDs were synthesized for the first time and were covalently bonded to GO. The fluorescence of the QD-GO nanocomposite was enhanced relative to the unconjugated QDs. Various techniques including TEM, SEM, HRSEM, XRD, Raman, FT-IR, UV/vis and fluorescence spectrophotometry were employed to characterize both the QDs and the QD-GO nanocomposite. Four commonly found priority PAH analytes namely; phenanthrene (Phe), anthracene (Ant), pyrene (Py) and naphthalene (Naph), were tested and it was found that each of the PAH analytes enhanced the fluorescence of the QD-GO probe. Phe was selected for further studies as the PL enhancement was significantly greater for this PAH. A limit of detection (LOD) of 0.19 µg/L was obtained for Phe under optimum conditions, whilst the LOD of Ant, Py and Naph were estimated to be ~0.26 µg/L. The fluorescence detection mechanism is proposed. Copyright © 2015 Elsevier B.V. All rights reserved.

Thermal kinetics and short range order parameters of Se80X20 (X = Te, Sb) binary glasses

NASA Astrophysics Data System (ADS)

Moharram, A. H.; Abu El-Oyoun, M.; Abdel-Baset, A. M.

2014-06-01

Bulk Se80Te20 and Se80Sb20 glasses were prepared using the melt-quench technique. Differential scanning calorimetry (DSC) curves measured at different heating rates (5 K/min≤ α≤50 K/min) and X-ray diffraction (XRD) are used to characterize the as-quenched specimens. Based on the obtained results, the activation energy of glass transition and the activation energy of crystallization ( E g, E c) of the Se80Te20 glass are (137.5, 105.1 kJ/mol) higher than the corresponding values of the Se80Sb20 glass (106.8, 71.2 kJ/mol). An integer n value ( n=2) of the Se80Te20 glass indicates that only one crystallization mechanism is occurring while a non-integer exponent ( n=1.79) in the Se80Sb20 glass means that two mechanisms are working simultaneously during the amorphous-crystalline transformations. The total structure factor, S( K), indicates the presence of the short-range order (SRO) and the absence of the medium-range order (MRO) inside the as-quenched alloys. In an opposite way to the activation energies, the values of the first peak position and the total coordination number ( r 1, η 1), obtained from a Gaussian fit of the radial distribution function, of the Se80Te20 glass are (2.42 nm, 1.99 atom) lower than the corresponding values (2.55 nm, 2.36 atom) of the Se80Sb20 specimens.

Colloidal Synthesis and Thermoelectric Properties of CuFeSe2 Nanocrystals

PubMed Central

Zhang, Bing-Qian; Zuo, Yong; Chen, Jing-Shuai; Niu, He-Lin; Mao, Chang-Jie

2017-01-01

Copper-based chalcogenides that contain abundant, low-cost and environmentally-friendly elements, are excellent materials for numerous energy conversion applications, such as photocatalysis, photovoltaics, photoelectricity and thermoelectrics (TE). Here, we present a high-yield and upscalable colloidal synthesis route for the production of monodisperse ternary I-III-VI2 chalcogenides nanocrystals (NCs), particularly stannite CuFeSe2, with uniform shape and narrow size distributions by using selenium powder as the anion precursor and CuCl2·2H2O and FeCl3 as the cationic precursors. The composition, the state of valence, size and morphology of the CuFeSe2 materials were examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), transmission electron microscope (TEM) and high resolution transmission electron microscope (HRTEM), respectively. Furthermore, the TE properties characterization of these dense nanomaterials compacted from monodisperse CuFeSe2 NCs by hot press at 623 K were preliminarily studied after ligand removal by means of hydrazine and hexane solution. The TE performances of the sintered CuFeSe2 pellets were characterized in the temperature range from room temperature to 653 K. Finally, the dimensionless TE figure of merit (ZT) of this Earth-abundant and intrinsic p-type CuFeSe2 NCs is significantly increased to 0.22 at 653 K in this work, which is demonstrated to show a promising TE materialand makes it a possible p-type candidate for medium-temperature TE applications. PMID:29278381

Recent Progress in the Design of Advanced Cathode Materials and Battery Models for High-Performance Lithium-X (X = O2 , S, Se, Te, I2 , Br2 ) Batteries.

PubMed

Xu, Jiantie; Ma, Jianmin; Fan, Qinghua; Guo, Shaojun; Dou, Shixue

2017-07-01

Recent advances and achievements in emerging Li-X (X = O 2 , S, Se, Te, I 2 , Br 2 ) batteries with promising cathode materials open up new opportunities for the development of high-performance lithium-ion battery alternatives. In this review, we focus on an overview of recent important progress in the design of advanced cathode materials and battery models for developing high-performance Li-X (X = O 2 , S, Se, Te, I 2 , Br 2 ) batteries. We start with a brief introduction to explain why Li-X batteries are important for future renewable energy devices. Then, we summarize the existing drawbacks, major progress and emerging challenges in the development of cathode materials for Li-O 2 (S) batteries. In terms of the emerging Li-X (Se, Te, I 2 , Br 2 ) batteries, we systematically summarize their advantages/disadvantages and recent progress. Specifically, we review the electrochemical performance of Li-Se (Te) batteries using carbonate-/ether-based electrolytes, made with different electrode fabrication techniques, and of Li-I 2 (Br 2 ) batteries with various cell designs (e.g., dual electrolyte, all-organic electrolyte, with/without cathode-flow mode, and fuel cell/solar cell integration). Finally, the perspective on and challenges for the development of cathode materials for the promising Li-X (X = O 2 , S, Se, Te, I 2 , Br 2 ) batteries is presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of Third-Order Optical Nonlinearities of Se-Sn (Bi,Te) Quaternary Chalcogenide Thin Films Using Ti: Sapphire Laser in Femtosecond Regime

NASA Astrophysics Data System (ADS)

Yadav, Preeti; Sharma, Ambika

2017-01-01

The objective of the present research work is to study the nonlinear optical properties of quaternary Se-Sn (Bi,Te) chalcogenide thin films. A Z-scan technique utilizing 800 nm femtosecond laser source has been used for the determination of the nonlinear refractive index ( n 2), two-photon absorption coefficient ( β 2) and third-order susceptibility ( χ (3)). In the measurement of n 2, an aperture is placed in the far field before the detector (closed aperture), while for the measurement of β 2, entire transmitted light is collected by the detector without an aperture (open aperture). Self-focusing has been observed in closed aperture transmission spectra. The appearance of the peak after the valley in this spectrum reflects the positive nonlinear refractive index. The calculated value of n 2 of the studied thin films varies from 1.06 × 10-12 cm2/W to 0.88 × 10-12 cm2/W. The compound-dependent behavior of n 2 is explained in this paper. We have also compared the experimental values of n 2 with the theoretically determined values, other compounds of chalcogenide glass and pure silica. The n 2 of the investigated thin films is found to be 3200 times higher than pure silica. The results of the open aperture Z-scan revealed that the value of β 2 of the studied compound is in the order of 10-8 cm/W. The behavior of two-photon absorption is described by means of the optical band gap ( E g) of the studied compound. The variation in the figure-of-merit from 0.32 to 1.4 with varying Sn content is also reported in this paper. The higher value of nonlinearity makes this material advantageous for optical fibers, waveguides and optical limiting devices.

Energy band-gap calculations of short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices

NASA Astrophysics Data System (ADS)

Wu, Yi-hong; Fujita, Shizuo; Fujita, Shigeo

1990-01-01

We report on the calculations of energy band gaps based on the semiempirical tight-binding model for short-period (ZnTe)m(ZnSe)n and (ZnS)m(ZnSe)n strained-layer superlattices (SLSs). During the calculation, much attention has been paid to the modeling of strain effect. It is found that (ZnTe)m(ZnSe)n superlattices grown on InAs, InP, and GaAs substrates show very different electronic properties from each other, which is consistent with experimental results now available. Assuming that the emission observed for (ZnTe)m(ZnSe)n SLS originates from intrinsic luminescence, we obtain an unstrained valence-band offset of 1.136±0.1 eV for this superlattice. On the other hand, the band gap of (ZnS)m(ZnSe)n superlattice grown coherently on GaP is found to exhibit a much stronger structure dependence than that grown coherently on GaAs. The difference of energy gap between superlattice with equal monolayers (m=n) and the corresponding alloy with equal chalcogenide composition is also discussed.

Enhanced piezoelectric effect in Janus group-III chalcogenide monolayers

NASA Astrophysics Data System (ADS)

Guo, Yu; Zhou, Si; Bai, Yizhen; Zhao, Jijun

2017-04-01

Piezoelectricity is a unique material property that converts mechanical energy into electricity or vice versa. Starting from the group-III monochalcogenide monolayers, we design a series of derivative Janus structures for piezoelectric materials, including Ga2SSe, Ga2STe, Ga2SeTe, In2SSe, In2STe, In2SeTe, GaInS2, GaInSe2, and GaInTe2. Our first-principles calculations show that these Janus structures are thermodynamically and dynamically stable. They have a bandgap in the range of 0.89-2.03 eV, lower than those of the perfect monolayers, and Ga2STe, Ga2SeTe, In2STe, and In2SeTe monolayers are direct gap semiconductors. They possess piezoelectric coefficients up to 8.47 pm/V, over four times the maximum value obtained in perfect group-III monochalcogenide monolayers. Moreover, the broken mirror symmetry of these Janus structures induces out-of-plane dipolar polarization, yielding additional out-of-plane piezoelectric coefficients of 0.07-0.46 pm/V. The enhanced piezoelectric properties enable the development of these novel two-dimensional materials for piezoelectric sensors and nanogenerators.

Understanding the evolution of anomalous anharmonicity in Bi 2 Te 3 - x Se x

DOE PAGES

Tian, Yao; Jia, Shuang; Cava, R. J.; ...

2017-03-08

The anharmonic effect in thermoelectrics has been a central topic for decades in both condensed matter physics and material science. However, despite the long-believed strong and complex anharmonicity in the Bi 2Te 3-xSe x series, experimental verification of anharmonicity and its evolution with doping remains elusive. We fill this important gap with high-resolution, temperature-dependent Raman spectroscopy in high-quality single crystals of Bi 2Te, Bi 2Te 2Se , and Bi 2Se 3 over the temperature range from 4 to 293 K. Klemens's model was employed to explain the renormalization of their phonon linewidths. The phonon energies of Bi 2Se 3 andmore » Bi 2Te 3 are analyzed in detail from three aspects: lattice expansion, cubic anharmonicity, and quartic anharmonicity. For the first time, we explain the evolution of anharmonicity in various phonon modes and across the series. Lastly, in particular, we find that the interplay between cubic and quartic anharmonicity is governed by their distinct dependence on the phonon density of states, providing insights into anomalous anharmonicity designing of new thermoelectrics.« less

Spin waves and magnetic exchange interactions in insulating Rb(0.89)Fe(1.58)Se(2).

PubMed

Wang, Miaoyin; Fang, Chen; Yao, Dao-Xin; Tan, GuoTai; Harriger, Leland W; Song, Yu; Netherton, Tucker; Zhang, Chenglin; Wang, Meng; Stone, Matthew B; Tian, Wei; Hu, Jiangping; Dai, Pengcheng

2011-12-06

The parent compounds of iron pnictide superconductors are bad metals with a collinear antiferromagnetic structure and Néel temperatures below 220 K. Although alkaline iron selenide A(y)Fe(1.6+x)Se(2) (A=K, Rb, Cs) superconductors are isostructural with iron pnictides, in the vicinity of the undoped limit they are insulators, forming a block antiferromagnetic order and having Néel temperatures of roughly 500 K. Here we show that the spin waves of the insulating antiferromagnet Rb(0.89)Fe(1.58)Se(2) can be accurately described by a local moment Heisenberg Hamiltonian. A fitting analysis of the spin wave spectra reveals that the next-nearest neighbour couplings in Rb(0.89)Fe(1.58)Se(2), (Ba,Ca,Sr)Fe(2)As(2), and Fe(1.05)Te are of similar magnitude. Our results suggest a common origin for the magnetism of all the Fe-based superconductors, despite having different ground states and antiferromagnetic orderings.

Idiosyncrasies of volcanic sulfur viscosity and the triggering of unheralded volcanic eruptions

NASA Astrophysics Data System (ADS)

Scolamacchia, Teresa; Cronin, Shane

2016-03-01

Unheralded "blue-sky" eruptions from dormant volcanoes cause serious fatalities, such as at Mt. Ontake (Japan) on 27 September 2014. Could these events result from magmatic gas being trapped within hydrothermal system aquifers by elemental sulfur (Se) clogging pores, due to sharp increases in its viscosity when heated above 159oC? This mechanism was thought to prime unheralded eruptions at Mt. Ruapehu in New Zealand. Impurities in sulfur (As, Te, Se) are known to modify S-viscosity and industry experiments showed that organic compounds, H2S, and halogens dramatically influence Se viscosity under typical hydrothermal heating/cooling rates and temperature thresholds. However, the effects of complex sulfur compositions are currently ignored at volcanoes, despite its near ubiquity in long-lived volcano-hydrothermal systems. Models of impure S behavior must be urgently formulated to detect pre-eruptive warning signs before the next "blue-sky" eruption

Thermoelectric properties of Nb3SbxTe7-x compounds

NASA Technical Reports Server (NTRS)

Snyder, J.; Wang, S.; Caillat, T.

2002-01-01

Niobium antimony telluride, Nb3Sbx,Te7-x, was synthesized and tested for thermoelectric properties in the Thermoelectrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield acomplicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x, compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Te5 is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n-type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondary metallic phases that dominated the transport properties of the resulting compounds.

Thermal and Electrical Transport Study on Thermoelectric Materials Through Nanostructuring and Magnetic Field

NASA Astrophysics Data System (ADS)

Yao, Mengliang

Thermoelectric (TE) materials are of great interest to contemporary scientists because of their ability to directly convert temperature differences into electricity, and are regarded as a promising mode of alternative energy. The TE conversion efficiency is determined by the Carnot efficiency, eta C and is relevant to a commonly used figure of merit ZT of a material. Improving the value of ZT is presently a core mission within the TE field. In order to advance our understanding of thermoelectric materials and improve their efficiency, this dissertation investigates the low-temperature behavior of the p-type thermoelectric Cu 2Se through chemical doping and nanostructuring. It demonstrates a method to separate the electronic and lattice thermal conductivities in single crystal Bi2Te3, Cu, Al, Zn, and probes the electrical transport of quasi 2D bismuth textured thin films. Cu2Se is a good high temperature TE material due to its phonon-liquid electron-crystal (PLEC) properties. It shows a discontinuity in transport coefficients and ZT around a structural transition. The present work on Cu2Se at low temperatures shows that it is a promising p-type TE material in the low temperature regime and investigates the Peierls transition and charge-density wave (CDW) response to doping [1]. After entering the CDW ground state, an oscillation (wave-like fluctuation) was observed in the dc I-V curve near 50 K; this exhibits a periodic negative differential resistivity in an applied electric field due to the current. An investigation into the doping effect of Zn, Ni, and Te on the CDW ground state shows that Zn and Ni-doped Cu2Se produces an increased semiconducting energy gap and electron-phonon coupling constant, while the Te doping suppresses the Peierls transition. A similar fluctuating wave-like dc I-V curve was observed in Cu1.98Zn 0.02Se near 40 K. This oscillatory behavior in the dc I-V curve was found to be insensitive to magnetic field but temperature dependent [2]. Understanding reducing thermal conductivity in TE materials is an important facet of increasing TE efficiency and potential applications. In this dissertation, a magnetothermal (MTR) resistance method is used to measure the lattice thermal conductivity, kappaph of single crystal Bi2Te 3 from 5 to 60 K. A large transverse magnetic field is applied to suppress the electronic thermal conduction while measuring thermal conductivity and electrical resistivity. The lattice thermal conductivity is then calculated by extrapolating the thermal conductivity versus electrical conductivity curve to a zero electrical conductivity value. The results show that the measured phonon thermal conductivity follows the eDeltamin/T temperature dependence and the Lorenz ratio corresponds to the modified Sommerfeld value in the intermediate temperature range. These low-temperature experimental data and analysis on Bi2Te3 are important compliments to previous measurements and theoretical calculations at higher temperatures, 100 - 300 K. The MTR method on Bi2Te3 provides data necessary for first-principles calculations [4]. A parallel study on single crystal Cu, Al and Zn shows the applicability of the MTR method for separating kappae and kappaph in metals and indicates a significant deviation of the Lorenz ratio between 5 K and 60 K [3]. Elemental bismuth is a component of many TE compounds and in this dissertation magnetoresistance measurements are used investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Textured and non-textured bismuth thin films are examined by measuring their angle-dependent magnetoresistance at different temperatures (3 - 300 K) and applied magnetic fields (0 - 90 kOe). Experimental evidence shows that the anisotropic conduction is due to the large mass anisotropy of bismuth and is confirmed by a parallel study on an antimony thin film [5].

Electron beam crystallization of Te 1-xSe x films

NASA Astrophysics Data System (ADS)

Vermaak, J. S.; Raubenheimer, D.

1987-11-01

In situ transmission electron microscopy has been used to study the effect of high energy electrons on the amorphous-to-crystalline phase transformation, the isothermal growth rates, as well as the structure and orientation of the recrystallized Te 0.7Se 0.3 thin films. It is shown that the beam effect is not a pure thermal effect. It is proposed that the electron beam initiates nucleation and promotes growth by the interaction of the high energy electrons with the van der Waals type bonds between the short composite Te-Se chains.

Effects of high-energy proton irradiation on the superconducting properties of Fe(Se,Te) thin films

NASA Astrophysics Data System (ADS)

Sylva, G.; Bellingeri, E.; Ferdeghini, C.; Martinelli, A.; Pallecchi, I.; Pellegrino, L.; Putti, M.; Ghigo, G.; Gozzelino, L.; Torsello, D.; Grimaldi, G.; Leo, A.; Nigro, A.; Braccini, V.

2018-05-01

In this paper we explore the effects of 3.5 MeV proton irradiation on Fe(Se,Te) thin films grown on CaF2. In particular, we carry out an experimental investigation with different irradiation fluences up to 7.30 · 1016 cm‑2 and different proton implantation depths, in order to clarify whether and to what extent the critical current is enhanced or suppressed, what are the effects of irradiation on the critical temperature, resistivity, and critical magnetic fields, and finally what is the role played by the substrate in this context. We find that the effect of irradiation on superconducting properties is generally small compared to the case of other iron-based superconductors. The irradiation effect is more evident on the critical current density Jc, while it is minor on the transition temperature Tc, normal state resistivity ρ, and on the upper critical field Hc2 up to the highest fluences explored in this work. In more detail, our analysis shows that when protons implant in the substrate far from the superconducting film, the critical current can be enhanced up to 50% of the pristine value at 7 T and 12 K; meanwhile, there is no appreciable effect on critical temperature and critical fields together with a slight decrease in resistivity. On the contrary, when the implantation layer is closer to the film–substrate interface, both critical current and temperature show a decrease accompanied by an enhancement of the resistivity and lattice strain. This result evidences that possible modifications induced by irradiation in the substrate may affect the superconducting properties of the film via lattice strain. The robustness of the Fe(Se,Te) system to irradiation-induced damage makes it a promising compound for the fabrication of magnets in high-energy accelerators.

Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures

NASA Astrophysics Data System (ADS)

Ovsyannikov, Sergey V.; Shchennikov, Vladimir V.

2004-02-01

The longitudinal and transverse thermomagnetic Nernst-Ettingshausen (LNE, TNE) effects and the Maggi-Reghi-Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst-Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed.

Tuning of thermoelectric properties with changing Se content in Sb2Te3

NASA Astrophysics Data System (ADS)

Das, D.; Malik, K.; Deb, A. K.; Kulbachinskii, V. A.; Kytin, V. G.; Chatterjee, S.; Das, D.; Dhara, S.; Bandyopadhyay, S.; Banerjee, A.

2016-02-01

Polycrystalline Sb2Te3-x Se x (0.0≤ x≤1.0) samples were synthesized by the solid-state reaction method. The structural analysis showed that up to the maximal concentration of Se, the samples possess rhombohedral crystal symmetry (space group R\\bar{3}m ). The increase of Se content increases the resistivity of the samples. The variation of phonon frequencies, observed from the Raman spectroscopic study, depicts an anomalous behaviour around x=0.2 . The sample Sb2Te2.8Se0.2 also shows maximum Seebeck coefficient, carrier concentration and thermoelectric power factor. The nature of the scattering mechanism controlling the thermopower data has been explored. The thermoelectric properties of the synthesized materials have been analyzed theoretically in the frame of the Boltzmann equation approach.

Nanoscale Inhomogeneous Superconductivity in Fe(Te1-xSex) Probed by Nanostructure Transport.

PubMed

Yue, Chunlei; Hu, Jin; Liu, Xue; Sanchez, Ana M; Mao, Zhiqiang; Wei, Jiang

2016-01-26

Among iron-based superconductors, the layered iron chalcogenide Fe(Te1-xSex) is structurally the simplest and has attracted considerable attention. It has been speculated from bulk studies that nanoscale inhomogeneous superconductivity may inherently exist in this system. However, this has not been directly observed from nanoscale transport measurements. In this work, through simple micromechanical exfoliation and high-precision low-energy ion milling thinning, we prepared Fe(Te0.5Se0.5) nanoflakes with various thicknesses and systematically studied the correlation between the thickness and superconducting phase transition. Our result revealed a systematic thickness-dependent evolution of superconducting transition. When the thickness of the Fe(Te0.5Se0.5) flake is reduced to less than the characteristic inhomogeneity length (around 12 nm), both the superconducting current path and the metallicity of the normal state in Fe(Te0.5Se0.5) atomic sheets are suppressed. This observation provides the first transport evidence for the nanoscale inhomogeneous nature of superconductivity in Fe(Te1-xSex).

Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

DOE PAGES

Xie, Weiyu; Lu, Toh -Ming; Wang, Gwo -Ching; ...

2017-11-14

Enhanced van der Waals (vdW) epitaxy of semiconductors on a layered vdW substrate is identified as the formation of dative bonds. For example, despite that NbSe 2 is a vdW layeredmaterial, first-principles calculations reveal that the bond strength at a CdTe-NbSe 2 interface is five times as large as that of vdW interactions at a CdTe-graphene interface. Finally, the unconventional chemistry here is enabled by an effective net electron transfer from Cd dangling-bond states at a CdTe surface to metallic nonbonding NbSe 2 states, which is a necessary condition to activate the Cd for enhanced binding with Se.

Enhanced van der Waals epitaxy via electron transfer enabled interfacial dative bond formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Weiyu; Lu, Toh -Ming; Wang, Gwo -Ching

Enhanced van der Waals (vdW) epitaxy of semiconductors on a layered vdW substrate is identified as the formation of dative bonds. For example, despite that NbSe 2 is a vdW layeredmaterial, first-principles calculations reveal that the bond strength at a CdTe-NbSe 2 interface is five times as large as that of vdW interactions at a CdTe-graphene interface. Finally, the unconventional chemistry here is enabled by an effective net electron transfer from Cd dangling-bond states at a CdTe surface to metallic nonbonding NbSe 2 states, which is a necessary condition to activate the Cd for enhanced binding with Se.

High-pressure studies on electronic transport properties of Te-substituted Bi2Se3–xTex topological insulators

NASA Astrophysics Data System (ADS)

Devidas, T. R.; Abhirami, S.; Sharma, Shilpam; Amaladas, E. P.; Mani, Awadhesh

2018-03-01

Studies on the electrical transport properties of the 3D topological insulators Bi2Se3 under iso-electronic substitution of Te at Se sites and the application of external pressure have been performed to understand the evolution of its ground-state properties and to explore possible electronic phase transitions in Bi2Se3‑x Te x (x=0\\text{--}3 ) systems. While the external pressure suppresses the metallic behaviour of Bi2Se3 arising from defect charge carriers leading ultimately to non-metal behaviour, the effect of pressure on Te-doped samples x=1\\text{--}2 seems to be more striking, and causes multiple electronic phase transitions such as an insulator-to-metal transition (MIT) followed by pressure-induced superconducting transition at higher pressures. All the critical parameters such as critical pressure for the occurrence of MIT (PMIT}) , superconductivity (PSC}) and maximum pressure induced superconducting transition temperature (Tc,max}) for given compositions are seen to exhibit maxima at x=1.6 which is the composition that exhibits the most insulating behaviour with least concentration of defect charge carriers among the samples of Bi2Se3‑x Te x (x=0\\text{--}3 ) series. The superconducting transition temperature (Tc}) decreases with increasing pressure in x=1\\text{--}2 samples, while it remains nearly constant for Bi2Te3. Based on the analysis of the experimental data it is surmised that the pressure-induced superconductivity seen in these systems is of conventional (BCS) type.

Distinguishability of stacks in ZnTe/ZnSe quantum dots via spectral analysis of Aharonov-Bohm oscillations

NASA Astrophysics Data System (ADS)

Roy, Bidisha; Ji, Haojie; Dhomkar, Siddharth; Cadieu, Fred J.; Peng, Le; Moug, Richard; Tamargo, Maria C.; Kuskovsky, Igor L.

2013-02-01

A spectral analysis of the Aharonov-Bohm (AB) oscillations in photoluminescence intensity was performed for stacked type-II ZnTe/ZnSe quantum dots (QDs) fabricated within multilayered Zn-Se-Te system with sub-monolayer insertions of Te. Robust AB oscillations allowed for fine probing of distinguishable QDs stacks within the ensemble of QDs. The AB transition magnetic field, B AB , changed from the lower energy side to the higher energy side of the PL spectra revealing the presence of different sets of QDs stacks. The change occurs within the spectral range, where the contributing green and blue bands of the spectra overlapped. "Bundling" in lifetime measurements is seen at transition spectral regions confirming the results.

Optical and thermoelectric properties of nano-particles based Bi2(Te1-xSex)3 thin films

NASA Astrophysics Data System (ADS)

Adam, A. M.; Lilov, E.; Petkov, P.

2017-01-01

Nano-particles of Bi2Te3 and Bi2(Te1-xSex)3 films were deposited using vacuum thermal evaporation technique from previously prepared bulk alloys synthesized by melting method. Optical and thermoelectric properties were studied in the temperature range of 300-473K. The formation of none- and Se-doped Bi2Te3 nano-particles was verified by EDX and XRD analysis. TEM, SEM and AFM analysis showed the prepared films are polycrystalline in nature. The measurements of electrical conductivity and Seebeck coefficient, alongside with thermal conductivity calculations, resulted in the highest values of thermoelectric power at high temperature to be reported. The maximum value of power factor was calculated at 62.82917 μWK-2cm-1 for (Bi2Se0.3Te1.7) sample at 463 K. On the addition of Se to Bi2Te3 film, a significant decrease of the electronic thermal conductivity (Kel) from 2.181 × 10-2 to 0.598 × 10-2 (μW/cm.K) could be achieved. Figure of merit (ZT) calculations showed a maximum value of 0.85 at room temperature, for Bi2Te3. Besides the increase of ZT value for all samples at higher temperature, surprisingly, a value of 2.75 for (Bi2Se1.2Te1.8) was obtained. We believe our results could open avenues for new applications.

Green synthesis of water soluble semiconductor nanocrystals and their applications

NASA Astrophysics Data System (ADS)

Wang, Ying

II-VI semiconductor nanomaterials, e.g. CdSe and CdTe, have attracted great attention over the past decades due to their fascinating optical and electrical properties. The research presented here focuses on aqueous semiconductor nanomaterials. The work can be generally divided into three parts: synthesis, property study and application. The synthetic work is devoted to develop new methods to prepare shape- and structure-controlled II-VI semiconductor nanocrystals including nanoparticles and nanowires. CdSe and CdSe CdS semiconductor nanocrystals have been synthesized using sodium citrate as a stabilizer. Upon prolonged illumination with visible light, photoluminescence quantum yield of those quantum dots can be enhanced up to 5000%. The primary reason for luminescence enhancement is considered to be the removing of specific surface states (photocorrosion) and the smoothing of the CdSe core surface (photoannealing). CdTe nanowires are prepared through self-organization of stabilizer-depleted CdTe nanoparticles. The dipolar-dipolar attraction is believed to be the driving force of nanowire formation. The rich surface chemistry of CdTe nanowire is reflected by the formation of silica shell with different morphologies when nanowires with different capping ligands are used. Te and Se nanowires are prepared by chemical decomposition of CdTe and CdSe nanoparticles in presence of an external chemical stimulus, EDTA. These results not only provide a new example of NP→NW transformation, but also lead to a better understanding of the molecular process occurring in the stabilizer-depleted nanoparticles. The applications of those semiconductor materials are primarily based on the construction of nano-structured ultrathin films with desirable functions by using layer-by-layer technique (LBL). We demonstrate that light-induced micro-scale multicolor luminescent patterns can be obtained on photoactivable CdSe/CdS nanoparticles thin films by combining the advantages of LBL as well as high-throughput and simplicity of photolithography. Photoconductive LBL thin films are fabricated from Te nanowires. The thin film has distinctively metallic mirror-like appearance and displays strong photoconductance effect characteristic of narrow band-gap semiconductors. In-situ reduction of gold results in formation of Au nanoparticles adhering to Te nanowires, which leads to the disappearance of photoconductivity of the Te thin film. Those nanomaterials are considered for various applications, such as light emitting devices, data storage materials, biosensors, photodetectors.

Forced Ion Migration for Chalcogenide Phase Change Memory Device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A (Inventor)

2013-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2011-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Forced ion migration for chalcogenide phase change memory device

NASA Technical Reports Server (NTRS)

Campbell, Kristy A. (Inventor)

2012-01-01

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

High temperature thermoelectric properties of rock-salt structure PbS

DOE PAGES

Parker, David S.; Singh, David J.

2013-12-18

We present an analysis of the high temperature transport properties of rock-salt structure PbS, a sister compound to the better studied lead chalcogenides PbSe and PbTe. In this study, we find thermopower magnitudes exceeding 200 V/K in a wide doping range for temperatures of 800 K and above. Based on these calculations, and an analysis of recent experimental work we find that this material has a potential for high thermoelectric performance. Also, we find favorable mechanical properties, based on an analysis of published data.

Electrodeposited CuGa(Se,Te)2 thin-film prepared from sulfate bath

NASA Astrophysics Data System (ADS)

Oda, Yusuke; Minemoto, Takashi; Takakura, Hideyuki; Hamakawa, Yoshihiro

2006-09-01

CuGa(Se,Te)2 (CGST) thin films were prepared on a soda-lime glass substrate sputter coated with molybdenum by electrodeposition. The aqueous solution which contained CuSO4-5H2O, Ga2(SO4)3-19.3H2O, H2SeO3, H6TeO6, Li2SO4 and gelatin was adjusted to pH 2.6 with dilute H2SO4 and NaOH. It has been observed that (i) a crack-less and smooth CGST film with a composition close to the stoichiometric ratio was deposited at -600 mV (vs. Ag/AgCl) when Te was hardly included in the film and (ii) cracks and products on the surface increased with increasing Te content in the film. Annealing at 600 °C for 10 min improved the crystallinity of the as-deposited films.

Structural and dynamical properties of Bridgman-grown CdSexTe1-x (0

NASA Astrophysics Data System (ADS)

Talwar, Devki N.; Feng, Zhe Chuan; Lee, Jyh-Fu; Becla, P.

2013-04-01

Measurements of the Raman scattering and extended x-ray-absorption fine-structure (EXAFS) spectroscopy are reported on a series of Bridgman-grown zinc-blende CdTe1-xSex (0.35 ≥ x > 0.05) ternary alloys to empathize their lattice dynamical and structural properties. Low-temperature Raman spectra have revealed the classic CdTe-like (TO1, LO1) and CdSe-like (TO2, LO2) pairs of optical phonons. The composition-dependent peak positions of the LO2 modes exhibited shifts towards the higher-energy side, while those of the LO1 phonon frequencies have unveiled the slight redshifts. Detailed analyses of EXAFS data by using the first-principles bond orbital model have enabled us to estimate both the lattice relaxations and nearest-neighbor radial force constants around the Se/Te atoms in the CdTe/CdSe matrix. These results are methodically integrated in the “average t-matrix” formalism within the Green's-function theory for defining the impurity perturbations to comprehend the composition-dependent optical phonons in CdTe1-xSex alloys. Based on our comprehensive calculations of impurity modes in the low-composition regime x→ 0, we have assigned the weak phonon feature observed near ˜175 cm-1 in the low-temperature infrared reflectivity spectroscopy study to a SeTe localized vibrational mode.

Thermoelectric properties and thermal stability of layered chalcogenides, TlScQ2, Q = Se, Te.

PubMed

Aswathy, Vijayakumar Sajitha; Sankar, Cheriyedath Raj; Varma, Manoj Raama; Assoud, Abdeljalil; Bieringer, Mario; Kleinke, Holger

2017-12-12

A few thallium based layered chalcogenides of α-NaFeO 2 structure-type are known for their excellent thermoelectric properties and interesting topological insulator nature. TlScQ 2 belongs to this structural category. In the present work, we have studied the electronic structure, electrical and thermal transport properties and thermal stability of the title compounds within the temperature range 2-600 K. Density functional theory (DFT) predicts a metallic nature for TlScTe 2 and a semiconducting nature for TlScSe 2 . DFT calculations also show significant lowering of energies of frontier bands upon inclusion of spin-orbit coupling contribution in the calculation. The electronic structure also shows the simultaneous occurrence of holes and electron pockets for the telluride. Experiments reveal that the telluride shows a semi-metallic behaviour whereas the selenide is a semiconductor. The thermoelectric properties for both the materials were also investigated. Both these materials possess very low thermal conductivity which is an attractive feature for thermoelectrics. However, they lack thermal stability and decompose upon warming above room temperature, as evidenced from high temperature powder X-ray diffraction and thermal analysis.

Quaternary laser devices: history and state of the art

NASA Astrophysics Data System (ADS)

Eliseev, Petr G.

1993-05-01

Quaternary alloys of semiconductor compounds are suitable materials for wide-spectrum optoelectronic applications. The most important property of these efficient luminescent materials is the opportunity to fit the lattice parameter in some range to a given value corresponding to another crystalline material. This leads to the method to construct defect-free and stress-free heterojunctions, which was used for the preparation of a number of laser and LED devices. Quaternaries of InGaAsP, InGaSbAs, InSbAsP, PbSnTeSe, and other alloys were introduced into practical usage particularly in diode laser devices. The alloy InGaAsP appears to be one of the most widely used in optoelectronic applications at present as it covers ranges near 1.3 and 1.55 micrometers wavelengths of fiber-optic communication. For the spectral range near 2 micrometers the alloy InGaSbAs seems to be most attractive, and cw-operating diode lasers at room temperature were demonstrated at 2.0 - 2.4 micrometers . The alloy PbSnTeSe was used to obtain a longest wave of diode laser emission 46 micrometers . Quaternaries played an important role in the development of the semiconductor optoelectronics during the last two decades.

Single layer of MX3(M = Ti, Zr; X = S, Se, Te): a new platform for nano-electronics and optics

NASA Astrophysics Data System (ADS)

Jin, Yingdi; Li, Xingxing; Yang, Jinlong

A serial of two dimensional titanium and zirconium trichalcogenides nanosheets MX3 (M=Ti, Zr; X=S, Se, Te) are investigated based on first-principles calculations. The evaluated low cleavage energy indicates that stable two dimensional monolayers can be exfoliated from their bulk crystals in experiment. Electronic studies reveal very rich electronic properties in these monolayers, including metallic TiTe3 and ZrTe3, direct band gap semiconductor TiS3 and indirect band gap semiconductors TiSe3, ZrS3 and ZrSe3. The band gaps of all the semiconductors are between 0.57~1.90 eV, which implies their potential applications in nano-electronics. And the calculated effective masses demonstrate highly anisotropic conduction properties for all the semiconductors. Optically, TiS3 and TiSe3 monolayers exhibit good light absorption in the visible and near-infrared region respectively, indicating their potential applications in optical devices. In particular, the highly anisotropic optical absorption of TiS3 monolayer suggests it could be used in designing nano optical waveguide polarizers.

Investigation of the bipolar effect in the thermoelectric material CaMg2Bi2 using a first-principles study.

PubMed

Gong, J J; Hong, A J; Shuai, J; Li, L; Yan, Z B; Ren, Z F; Liu, J-M

2016-06-28

The bipolar effect in relatively narrow band-gap thermoelectric (TE) compounds is a negative process deteriorating the TE properties particularly at higher temperatures. In this work, we investigate the TE performance of the compound CaMg2Bi2 using the first-principles calculation and semi-classical Boltzmann transport theory in combination with our experimental data. It is revealed that this compound exhibits a remarkable bipolar effect and temperature-dependent carrier concentration. The bipolar effect imposes remarkable influence on all the electron-transport related TE parameters. An effective carrier concentration neff as a function of temperature is proposed to account for the bipolar effect induced carrier excitations. The as-evaluated TE parameters then show good consistency with measured results. This work may shed light on our understanding of the bipolar effect in TE compounds.

Effects of Pnictogen Atmosphere Annealing on Fe1+yTe0.6Se0.4

NASA Astrophysics Data System (ADS)

Yamada, Tatsuhiro; Sun, Yue; Pyon, Sunseng; Tamegai, Tsuyoshi

2016-02-01

It has been clarified that bulk superconductivity in Fe1+yTe0.6Se0.4 can be induced by annealing in an appropriate atmosphere to remove the harmful effects of excess iron. In order to clarify the details of the annealing process, we studied the changes in the physical properties and reaction products of Fe1+yTe0.6Se0.4 annealed in pnictogen (P, As, Sb) atmospheres. Crystals annealed in a pnictogen atmosphere show bulk superconductivity and the values of Tc and Jc are about 14 K and (2-4) × 105 A/cm2 (2 K, self-field), respectively. It is also found that the reaction rate increases with the increase in the saturated vapor pressure of the pnictogen. Unexpectedly, the reaction products of Fe1+yTe0.6Se0.4 after annealing in a P atmosphere mainly consist of FeTe2. In addition, the amount of P required to obtain the optimal Tc is much smaller than the amount of excess iron, which is similar to the case of oxygen annealing. P, oxygen, and to some extent As could serve as catalysts to form FeTe2 to remove excess iron.

Obtaining Large Columnar CdTe Grains and Long Lifetime on CdSe, MgZnO, or CdS Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amarasinghe, Mahisha; Colegrove, Eric M; Moseley, John

CdTe solar cells have reached efficiencies comparable to multicrystalline silicon and produce electricity at costs competitive with traditional energy sources. Recent efficiency gains have come partly from shifting from the traditional CdS window layer to new materials such as CdSe and MgZnO, yet substantial headroom still exists to improve performance. Thin film technologies including Cu(In,Ga)Se2, perovskites, Cu2ZnSn(S,Se)4, and CdTe inherently have many grain boundaries that can form recombination centers and impede carrier transport; however, grain boundary engineering has been difficult and not practical. In this work, it is demonstrated that wide columnar grains reaching through the entire CdTe layer canmore » be achieved by aggressive postdeposition CdTe recrystallization. This reduces the grain structure constraints imposed by nucleation on nanocrystalline window layers and enables diverse window layers to be selected for other properties critical for electro-optical applications. Computational simulations indicate that increasing grain size from 1 to 7 um can be equivalent to decreasing grain-boundary recombination velocity by three orders of magnitude. Here, large high-quality grains enable CdTe lifetimes exceeding 50 ns.« less

InP/ZnSe/ZnS core-multishell quantum dots for improved luminescence efficiency

NASA Astrophysics Data System (ADS)

Greco, Tonino; Ippen, Christian; Wedel, Armin

2012-04-01

Semiconductor quantum dots (QDs) exhibit unique optical properties like size-tunable emission color, narrow emission peak, and high luminescence efficiency. QDs are therefore investigated towards their application in light-emitting devices (QLEDs), solar cells, and for bio-imaging purposes. In most cases QDs made from cadmium compounds like CdS, CdSe or CdTe are studied because of their facile and reliable synthesis. However, due to the toxicity of Cd compounds and the corresponding regulation (e.g. RoHS directive in Europe) these materials are not feasible for customer applications. Indium phosphide is considered to be the most promising alternative because of the similar band gap (InP 1.35 eV, CdSe 1.73 eV). InP QDs do not yet reach the quality of CdSe QDs, especially in terms of photoluminescence quantum yield and peak width. Typically, QDs are coated with another semiconductor material of wider band gap, often ZnS, to passivate surface defects and thus improve luminescence efficiency. Concerning CdSe QDs, multishell coatings like CdSe/CdS/ZnS or CdSe/ZnSe/ZnS have been shown to be advantageous due to the improved compatibility of lattice constants. Here we present a method to improve the luminescence efficiency of InP QDs by coating a ZnSe/ZnS multishell instead of a ZnS single shell. ZnSe exhibits an intermediate lattice constant of 5.67 Å between those of InP (5.87 Å) and ZnS (5.41 Å) and thus acts as a wetting layer. As a result, InP/ZnSe/ZnS is introduced as a new core-shell quantum dot material which shows improved photoluminescence quantum yield (up to 75 %) compared to the conventional InP/ZnS system.

Effect of metallic capping layers on the superconductivity in FeSe thin films.

NASA Astrophysics Data System (ADS)

Shibayev, Pavel; Salehi, Maryam; Moon, Jisoo; Oh, Seongshik; Oh Lab Team

In the past few years, there has been an increased interest in understanding the superconducting behavior of iron selenide (FeSe). Past efforts of others aimed at growing FeSe thin films yielded some success in reaching a Tc of 40K, but at present there is a stark lack of consensus among groups working on this problem. We set a goal of growing FeSe on insulating SrTiO3 (STO) substrates by optimizing both the growth temperature and the protection layer. In our quest to achieve this, we concentrate on keeping track of each compound's structural evolution with temperature via RHEED, an aspect often overlooked in papers describing FeSe growth, thus presenting a unique perspective to tackling this multifaceted challenge. Our group has grown 1, 3, and 30 unit-cell thick FeSe on STO using a state-of-the-art molecular beam epitaxy (MBE) system in our lab. Crucially, we expect to search for superconductivity in FeSe capped by unprecedented metallic protection layers. In addition, the FeSe/STO heterostructures with FeTe protection layers will be grown to enable comparison of existing transport data and scanning tunneling spectra (STS) to data involving our own novel cappings. Support: NSF EFRI Scholars program (1542798), EPiQS Initiative (GBMF4418).

Synthesis and Physical Properties of the Oxofluoride Cu2(SeO3)F2.

PubMed

Mitoudi-Vagourdi, Eleni; Papawassiliou, Wassilios; Müllner, Silvia; Jaworski, Aleksander; Pell, Andrew J; Lemmens, Peter; Kremer, Reinhard K; Johnsson, Mats

2018-04-16

Single crystals of the new compound Cu 2 (SeO 3 )F 2 were successfully synthesized via a hydrothermal method, and the crystal structure was determined from single-crystal X-ray diffraction data. The compound crystallizes in the orthorhombic space group Pnma with the unit cell parameters a = 7.066(4) Å, b = 9.590(4) Å, and c = 5.563(3) Å. Cu 2 (SeO 3 )F 2 is isostructural with the previously described compounds Co 2 TeO 3 F 2 and CoSeO 3 F 2 . The crystal structure comprises a framework of corner- and edge-sharing distorted [CuO 3 F 3 ] octahedra, within which [SeO 3 ] trigonal pyramids are present in voids and are connected to [CuO 3 F 3 ] octahedra by corner sharing. The presence of a single local environment in both the 19 F and 77 Se solid-state MAS NMR spectra supports the hypothesis that O and F do not mix at the same crystallographic positions. Also the specific phonon modes observed with Raman scattering support the coordination around the cations. At high temperatures the magnetic susceptibility follows the Curie-Weiss law with Curie temperature of Θ = -173(2) K and an effective magnetic moment of μ eff ∼ 2.2 μ B . Antiferromagnetic ordering below ∼44 K is indicated by a peak in the magnetic susceptibility. A second though smaller peak at ∼16 K is tentatively ascribed to a magnetic reorientation transition. Both transitions are also confirmed by heat capacity measurements. Raman scattering experiments propose a structural phase instability in the temperature range 6-50 K based on phonon anomalies. Further changes in the Raman shift of modes at ∼46 K and ∼16 K arise from transitions of the magnetic lattice in accordance with the susceptibility and heat capacity measurements.

Evidence for phase change memory behavior in In2(SexTe1-x)3 thin films

NASA Astrophysics Data System (ADS)

Matheswaran, P.; Sathyamoorthy, R.; Asokan, K.

2012-08-01

Crystalline In2(Se0.5Te0.5)3 thin films are prepared by thermal evaporation and subsequently annealed at 300°C in Ar atmosphere. SEM image of the crystalline sample shows spherical nature of constituents, distributed uniformly throughout the surface. Island structure of the surface is clearly visible after switching. Elemental composition of the sample remains unchanged even after switching. Temperature dependent I-V analysis shows stoichiometric phase change at 80°C [from In2(Se0.5Te0.5)3 to In2Te3 and In2Se3 phase], where current switches three orders of magnitude higher than that in lower temperature. Further rise in temperature results increase in current only after switching, where threshold voltage remains constant.

Design, crystal growth, and physical properties of low-temperature thermoelectric materials

NASA Astrophysics Data System (ADS)

Fuccillo, Michael K.

Thermoelectric materials serve as the foundation for two important modern technologies, namely 1) solid-state cooling, which enables small-area refrigeration without vibrations or moving parts, and 2) thermoelectric power generation, which has important implications for waste heat recovery and improved sources of alternative energy. Although the overall field of thermoelectrics research has been active for decades, and several consumer and industrial products have already been commercialized, the design and synthesis of new thermoelectrics that outperform long-standing state of the art materials has proven extremely challenging. This is particularly true for low-temperature refrigeration applications, which is the focus of this work; however, scientific advances in this area generally support power generation as well. In order to achieve more efficient materials for virtually all thermoelectric applications, improved materials design principles must be developed and synthetic procedures must be better understood. We aim to contribute to these goals by studying two classes of materials, namely 1) the tetradymites Bi2TeSe 2 and Bi2Te2Se, which are close relatives of state of the art thermoelectric cooling materials, and 2) Kondo insulating (-like) FeSb2 and FeSi, which possess anomalously enhanced low-temperature thermoelectric properties that arise from exotic electronic and magnetic properties. The organization of this dissertation is as follows: Chapter 1 is a brief perspective on solid-state chemistry. Chapter 2 presents experimental methods for synthesizing and characterizing thermoelectric materials. In Chapter 3, two original research projects are discussed: first, work on the tetradymite Bi2TeSe2 doped with Sb to achieve an n- to p-type transition, and second, the tetradymite Bi2Te2Se with chemical defects through two different methods. Chapter 4 gives the magnetic and transport properties of FeSb 2--RuSb2 alloys, a family of compounds exemplifying what we consider to be the next generation of thermoelectric materials for low-temperature cooling due to their anomalously enhanced low-temperature thermoelectric properties, along with an outlook for seeking additional materials with similarly enhanced properties. Lastly, in Chapter 5, a brief outlook on the future of thermoelectrics is discussed, along with our current and future work on FeSi-RuSi alloys.

Methods for synthesizing semiconductor quality chalcopyrite crystals for nonlinear optical and radiation detection applications and the like

DOEpatents

Stowe, Ashley; Burger, Arnold

2016-05-10

A method for synthesizing I-III-VI.sub.2 compounds, including: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound under heat, with mixing, and/or via vapor transport. The Group III element is melted at a temperature of between about 200 degrees C. and about 700 degrees C. Preferably, the Group I element consists of a neutron absorber and the group III element consists of In or Ga. The Group VI element and the single phase I-III compound are heated to a temperature of between about 700 degrees C. and about 1000 degrees C. Preferably, the Group VI element consists of S, Se, or Te. Optionally, the method also includes doping with a Group IV element activator.

Visible light to electrical energy conversion using photoelectrochemical cells

NASA Technical Reports Server (NTRS)

Wrighton, Mark S. (Inventor); Ellis, Arthur B. (Inventor); Kaiser, Steven W. (Inventor)

1983-01-01

Sustained conversion of low energy visible or near i.r. light (>1.25 eV) to electrical energy has been obtained using wet photoelectrochemical cells where there are no net chemical changes in the system. Stabilization of n-type semi-conductor anodes of CdS, CdSe, CdTe, GaP, GaAs and InP to photoanodic dissolution is achieved by employing selected alkaline solutions of Na.sub.2 S, Na.sub.2 S/S, Na.sub.2 Se, Na.sub.2 Se/Se, Na.sub.2 Te and Na.sub.2 Te/Te as the electrolyte. The oxidation of (poly) sulfide, (poly)selenide or (poly)telluride species occurs at the irradiated anode, and reduction of polysulfide, polyselenide or polytelluride species occurs at the dark Pt cathode of the photoelectrochemical cell. Optical to electrical energy conversion efficiencies approaching 15% at selected frequencies have been observed in some cells. The wavelength for the onset of photocurrent corresponds to the band gap of the particular anode material used in the cell.

Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure

NASA Astrophysics Data System (ADS)

Filatov, E. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

2011-12-01

The kinetics of the radiative recombination of photoexcited electrons and holes for a spatially direct transition in a ZnSe/BeTe type II heterostructure in an external electric field has been analyzed. A strong decrease (more than two orders of magnitude) in the photoluminescence intensity, as well as a decrease in the duration of the relaxation of the direct transition, is observed when the electric field is applied. The energy levels and wavefunctions of electrons and holes in the ZnSe/BeTe heterostructure subjected to the electric field have been numerically calculated. It has been shown that the observed decrease in the photoluminescence intensity and duration of the relaxation of the direct transition is due to both an increase in the radiative recombination time and an increase in the rate of escape of photoexcited holes from the above-barrier level in the ZnSe layer to the BeTe layer.

Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure

NASA Astrophysics Data System (ADS)

Filatov, E. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.

2012-02-01

The kinetics of the radiative recombination of photoexcited electrons and holes for a spatially direct transition in a ZnSe/BeTe type II heterostructure in an external electric field has been analyzed. A strong decrease (more than two orders of magnitude) in the photoluminescence intensity, as well as a decrease in the duration of the relaxation of the direct transition, is observed when the electric field is applied. The energy levels and wavefunctions of electrons and holes in the ZnSe/BeTe heterostructure subjected to the electric field have been numerically calculated. It has been shown that the observed decrease in the photoluminescence intensity and duration of the relaxation of the direct transition is due to both an increase in the radiative recombination time and an increase in the rate of escape of photoexcited holes from the above-barrier level in the ZnSe layer to the BeTe layer.

Theoretical investigation of structural, electronic and optical properties of MgxBa1-xS, MgxBa1-xSe and MgxBa1-xTe ternary alloys using DFT based FP-LAPW approach

NASA Astrophysics Data System (ADS)

Bhattacharjee, Rahul; Chattopadhyaya, Surya

2017-11-01

Density functional theory (DFT) based full-potential linearized augmented plane wave (FP-LAPW) methodology has been employed to investigate theoretically the structural, electronic and optical properties of MgxBa1-xS, MgxBa1-xSe and MgxBa1-xTe ternary alloys for 0 ≤ x ≤ 1 in their rock-salt (B1) crystallographic phase. The exchange-correlation potentials for the structural properties have been computed using the Wu-Cohen generalized-gradient approximation (WC-GGA) scheme, while those for the electronic and optical properties have been computed using both the WC-GGA and the recently developed Tran-Blaha modified Becke-Johnson (TB-mBJ) schemes. The thermodynamic stability of all the ternary alloys have been investigated by calculating their respective enthalpy of formation. The atomic and orbital origin of different electronic states in the band structure of the compounds have been identified from the respective density of states (DOS). Using the approach of Zunger and co-workers, the microscopic origin of band gap bowing has been discussed in term of volume deformation, charge exchange and structural relaxation. Bonding characteristics among the constituent atoms of each of the specimens have been discussed from their charge density contour plots. Optical properties of the binary compounds and ternary alloys have been investigated theoretically in terms of their respective dielectric function, refractive index, normal incidence reflectivity and optical conductivity. Several calculated results have been compared with available experimental and other theoretical data.

Relativistic Fermions Generated by Square Lattices in Layered Compounds

NASA Astrophysics Data System (ADS)

Mao, Zhiqiang

Recent discoveries of topological semimetals have generated immense interests since they represent new topological states of quantum matters. In this talk, I will present our recent studies on topological semimetals, which are focused on Dirac/Weyl fermions generated by square lattices in layered compounds. I will first report on our discoveries of two new Dirac materials Sr1-yMn1-zSb2 and BaMnSb2 in which nearly massless Dirac fermions are generated by 2D Sb layers. In Sr1-yMn1-zSb2, Dirac fermions are found to coexist with ferromagnetism, offering a rare opportunity to investigate the interplay between relativistic fermions and spontaneous time reversal symmetry breaking and explore a possible magnetic Weyl state. Then I will show our quantum oscillation studies on two new Dirac nodal line semimetals - ZrSiSe and ZrSiTe. We have not only revealed their signatures of nodal-line fermions, but also demonstrated that their atomically thin crystals are accessible via mechanical exfoliation, raising the possibility of realizing the theoretically predicted 2D topological insulators. Finally I will discuss exotic quantum transport behavior arising from the zeroth Landau level in Weyl semimetal YbMnBi2. This work is supported by the U.S. DOE under Grant No. DE-SC0014208 (support for the work on ZrSiSe and ZrSiTe) and DOE-EPSCoR Grant No. DE-SC0012432 with additional support from the Louisiana BoR (support for the work on (Sr/Ba)MnSb2 and YbMnBi2).

Field induced gap infrared detector

NASA Technical Reports Server (NTRS)

Elliott, C. Thomas (Inventor)

1990-01-01

A tunable infrared detector which employs a vanishing band gap semimetal material provided with an induced band gap by a magnetic field to allow intrinsic semiconductor type infrared detection capabilities is disclosed. The semimetal material may thus operate as a semiconductor type detector with a wavelength sensitivity corresponding to the induced band gap in a preferred embodiment of a diode structure. Preferred semimetal materials include Hg(1-x)Cd(x)Te, x is less than 0.15, HgCdSe, BiSb, alpha-Sn, HgMgTe, HgMnTe, HgZnTe, HgMnSe, HgMgSe, and HgZnSe. The magnetic field induces a band gap in the semimetal material proportional to the strength of the magnetic field allowing tunable detection cutoff wavelengths. For an applied magnetic field from 5 to 10 tesla, the wavelength detection cutoff will be in the range of 20 to 50 micrometers for Hg(1-x)Cd(x)Te alloys with x about 0.15. A similar approach may also be employed to generate infrared energy in a desired band gap and then operating the structure in a light emitting diode or semiconductor laser type of configuration.

Correlation between structural and thermodynamic properties of some selenium based phase-change materials

NASA Astrophysics Data System (ADS)

Chandel, Namrata; Mehta, Neeraj

2018-04-01

In this study, we prepared novel selenium rich multi-component glasses by incorporating In, Cd and Sb as foreign elements in an Sn containing Sesbnd Te system in order to study their metal-induced effects on the thermal properties of the parent ternary glass. In particular, we determined the thermodynamic parameters of Se80Te18Sn2 and Se80Te8Sn2M10 (M = Cd, In, Sb) glassy semiconductors in a non-isothermal environment using the differential scanning calorimetry. Calorimetric measurements were obtained in the glass transition regions for Se80Te18Sn2 and Se80Te8Sn2M10 (M = Cd, In, Sb) glasses to determine their thermodynamic parameters such as the specific heat, enthalpy, and entropy during glass transition. We analyzed the variation in the specific heat before and after the heat capacity jump in these alloys. The metal-induced effects of foreign elements on the thermodynamic properties of the parent glass were also investigated in terms of the influence of the elemental specific heat of the added elemental metal as well as the thermal stability and glass-forming ability of the glasses.

Far infrared filters for the Galileo-Jupiter and other missions

NASA Technical Reports Server (NTRS)

Seeley, J. S.; Hunneman, R.; Whatley, A.

1981-01-01

Progress in the development of FIR multilayer interference filters for the net flux radiometer and photopolarizing radiometer to be carried on board the Galileo mission to Jupiter is reported. The multilayer interference technique has been extended to the region above 40 microns by the use of PbTe/II-VI materials in hard-coated combination, with the thickest layers composed of CdSe QWOT at 74 microns and PbTe QWOT. Improvements have also been obtained in filters below 20 microns on the basis of the Chebyshev stack design. A composite filter cutting on steeply at 40 microns has been designed which employs a thin crystal quartz substrate, shorter wavelength absorption in ZnS and As2S3 thin films, and supplementary multilayer interference. Finally, absorptive filters have been developed based on II-VI compounds in multilayer combination with KRS-5 (or 6) on a KRS-5 (or 6) substrate

Point-contact spectroscopy of the iron chalcogenide superconductors: interplay between multiband superconductivity and magnetism

NASA Astrophysics Data System (ADS)

Park, Wan Kyu; Hunt, C. R.; Arham, H. Z.; Lu, X.; Greene, L. H.; Xu, Z. J.; Wen, J. S.; Lin, Z. W.; Li, Q.; Gu, G.

2010-03-01

We report point-contact conductance measurements on the iron chalcogenide superconductors, Fe1+yTe1-xSex. The excess Fe atoms are known to occupy the interstitial sites in the Te-Se plane, affecting the superconductivity as well as the magnetism in this family. For a compound having nominal values of y=0 and x=0.45, a single superconducting transition is observed at 14.2 K. In the superconducting state, BTK-like double peak structures due to Andreev reflection are observed. However, the peak position of different point contacts falls to a wide voltage range, 1.5 -- 4 mV. Additional multiple humps are sometimes observed in a much higher bias voltage range, 8 -- 15 mV. Most strikingly, conductance enhancement persists well above Tc. We will present possible interpretations of these experimental observations in terms of multiband superconductivity and the interplay between superconductivity and magnetism.

Topological Insulators in Ternary Compounds with a Honeycomb Lattice

NASA Astrophysics Data System (ADS)

Zhang, Hai-Jun; Chadov, Stanislav; Muchler, Lukas; Yan, Binghai; Qi, Xiao-Liang; Kübler, Jürgen; Zhang, Shou-Cheng; Felser, Claudia

2011-03-01

One of the most exciting subjects in solid state physics is a single layer of graphite which exhibits a variety of unconventional novel properties. The key feature of its electronic structure are linear dispersive bands which cross in a single point at the Fermi energy. This is so-called Dirac cone. The ternary compounds, such as LiAuSe and KHgSb with a honeycomb structure of their Au-Se and Hg-Sb layers feature band inversion very similar to HgTe which is a strong precondition for existence of the topological surface states. These materials exhibit the surface states formed by only a single Dirac cone at the G point together with the small direct band gap opened by a strong spin-orbit coupling (SOC) in the bulk. These materials are centro-symmetric, therefore, it is possible to determine the parity of their wave functions, and hence, their topological character. The work was supported by the supercomputing center at Stanford Institute Materials and Energy Science. The financial support of the DFG/ASPIMATT project (unit 1.2-A) is gratefully acknowledged.

Effect of thermal annealing on structure and optical band gap of Se{sub 66}Te{sub 25}In{sub 9} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh

2015-05-15

Thin films of a-Se{sub 66}Te{sub 25}In{sub 9} have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (E{sub g}) of a-Se{sub 66}Te{sub 25}In{sub 9} have been studied.

Features of the electronic structure of FeTe compounds

NASA Astrophysics Data System (ADS)

Grechnev, G. E.; Lyogenkaya, A. A.; Panfilov, A. S.; Logosha, A. V.; Kotlyar, O. V.; Gnezdilov, V. P.; Makarova, I. P.; Chareev, D. A.; Mitrofanova, E. S.

2015-12-01

A theoretical and experimental study of the electronic structure and nature of the chemical bonds in FeTe compounds in antiferromagnetic (AFM) and paramagnetic phases was carried out. It is established that the nature of the chemical bonds is mainly metallic, and the presence of covalent bonds Fe-Te and Te-Te helps to stabilize the structural distortions of the tetragonal phase of FeTe in the low-temperature region. It is found that the bicollinear AFM structure corresponds to the ground state of the FeTe compound and the calculated value of the magnetic moment MFe = -2.4μB is in good agreement with the data from neutron diffraction measurements. At the same time, the Fermi surface (FS) of the low-temperature AFM phase is radically different from the FS of the paramagnetic FeTe. Reconstructing the FS can lead to a sign change of the Hall coefficient observed in FeTe. The calculation results serve as evidence of the fact that the electronic structures and magnetic properties of FeTe are well-described by the model of itinerant d-electrons and the density functional theory (DFT-GGA).

Studies on Se75Te25-x In x chalcogenide glasses; a material for phase change memory

NASA Astrophysics Data System (ADS)

Srivastava, Archana; Tiwari, S. N.; Alvi, M. A.; Khan, Shamshad A.

2018-01-01

This research paper describes the non-isothermal crystallization during phase transformation in Se75Te25-x In x glasses synthesized by melt quenching method. For crystallization studies in these glasses, non-isothermal differential scanning calorimetry (DSC) measurements was done at constant heating rates of 5, 10, 15, 20 and 25 K min-1 in air atmosphere. The glass transition temperature (T g), on-set crystallization temperature (T c), peak crystallization temperature (T p) and melting temperatures (T m) were derived by DSC thermograms. Using various thermal parameters the activation energy of glass transition and crystallization were determined by using Kissinger, Moynihan and Ozawa approaches and found to be in good agreement. The value of the activation energy of glass transition (ΔE t) was found to be minimum for Se75Te19In6 alloys confirming its maximum probability of transition in a metastable state. Thermal stability parameters of Se75Te25-x In x were determined and found to be increased with indium content. High resolution x-ray diffraction and field emission scanning electron microscopy studies were employed for the study of phase transformation in Se75Te25-x In x glasses. The outcome of these studies shows that the investigated materials may be suitable for phase change memory devices.

Two-dimensional bismuth-rich nanosheets through the evaporative thinning of Se-doped Bi2Te3

NASA Astrophysics Data System (ADS)

Hanson, Eve D.; Shi, Fengyuan; Chasapis, Thomas C.; Kanatzidis, Mercouri G.; Dravid, Vinayak P.

2016-02-01

High bulk conductance obscures the behavior of surface states in the prototypical topological insulators Bi2Te3 and Bi2Se3. However, ternary phases of Bi2Te3-ySey with balanced donor and acceptor levels may lead to large bulk resistivity, allowing for the observation of the surface states. Additionally, the contribution of the bulk conductance may be further suppressed by nanostructuring, increasing the surface-to-volume ratio. Herein we report the synthesis of a ternary tetradymite newly confined to two dimensions. Ultra-thin large-area stable nanosheets were fabricated via evaporative thinning of a Bi2Te2.9Se0.1 original phase. Owing to vapor pressure differences, a compositional shift to a final Bi-rich phase is observed. The Se/Te ratio of the nanosheet increases tenfold, due to the higher stability of the Bi-Se bonds. Hexagonal crystal symmetry is maintained despite dramatic changes in thickness and stoichiometry. Given that small variations in stoichiometry of this ternary system can incur large changes in carrier concentration and switch majority carrier type, the large compositional shifts found in this case imply that compositional analysis of similar CVD and PVD grown materials is critical to correctly interpret topological insulator performance. Further, the characterization techniques deployed, including STEM-EDS and ToF-SIMS, serve as a case study in determining such compositional shifts in two-dimensional form.

Zn-VI quasiparticle gaps and optical spectra from many-body calculations.

PubMed

Riefer, A; Weber, N; Mund, J; Yakovlev, D R; Bayer, M; Schindlmayr, Arno; Meier, C; Schmidt, W G

2017-06-01

The electronic band structures of hexagonal ZnO and cubic ZnS, ZnSe, and ZnTe compounds are determined within hybrid-density-functional theory and quasiparticle calculations. It is found that the band-edge energies calculated on the [Formula: see text] (Zn chalcogenides) or GW (ZnO) level of theory agree well with experiment, while fully self-consistent QSGW calculations are required for the correct description of the Zn 3d bands. The quasiparticle band structures are used to calculate the linear response and second-harmonic-generation (SHG) spectra of the Zn-VI compounds. Excitonic effects in the optical absorption are accounted for within the Bethe-Salpeter approach. The calculated spectra are discussed in the context of previous experimental data and present SHG measurements for ZnO.

Thyroid hormones in milk and blood of lactating donkeys as affected by stage of lactation and dietary supplementation with trace elements.

PubMed

Todini, Luca; Salimei, Elisabetta; Malfatti, Alessandro; Ferraro, Stefano; Fantuz, Francesco

2012-05-01

The traditional utilization of donkeys (Equus asinus) as dairy animals has recently attracted substantial scientific interest with regard to human nutrition. Donkey milk is well tolerated by infants with cows' milk allergy, useful in the treatment of human immune-related diseases, in the prevention of atherosclerosis, and in-vitro studies showed an anti-proliferative effect. Active 3-3'-5-triiodothyronine (T3) in colostrum and milk could play different physiological roles, systemic and paracrine, for both the mother and the suckling offspring. The aim was to evaluate whether thyroid hormones (TH) concentrations in milk and blood of lactating donkeys change with the advancing lactation and whether they can be affected by dietary supplementation with several trace elements, some of them directly involved with TH synthesis (I), metabolism (Se) and action (Zn). Sixteen lactating jennies were divided into two groups (CTL and TE). Mixed feed for TE was added with Zn, Fe, Cu, Mn, I, Se and Co. Every 2 weeks milk and blood samples were collected at 11·00. Total concentrations of T3 in milk (T3M) and T3 and T4 in plasma (T3P and T4P) were assayed using ELISA kits, validated for the donkey species. T3M was not correlated with TH concentrations in blood, did not change with the stage of lactation, and was significantly higher in TE (4·09 ± 0·07 ng/ml, mean ± SE) than in CTL group (3·89 ± 0·08 ng/ml). T4P (81·8 ± 5·2 ng/ml) and T3P (15·2 ± 1 ng/ml) significantly changed with time, but were not significantly affected by dietary treatment. T3P/T4P ratio was significantly lower in TE group. This study indicates that in donkey milk the concentration of T3, a human-like bioactive compound, can be affected by trace elements intake.

First-principles study of the amorphous In3SbTe2 phase change compound

NASA Astrophysics Data System (ADS)

Los, Jan H.; Kühne, Thomas D.; Gabardi, Silvia; Bernasconi, Marco

2013-11-01

Ab initio molecular dynamics simulations based on density functional theory were performed to generate amorphous models of the phase change compound In3SbTe2 by quenching from the melt. In-Sb and In-Te are the most abundant bonds with only a minor fraction of Sb-Te bonds. The bonding geometry in the amorphous phase is, however, strongly dependent on the density in the range 6.448-5.75 g/cm3 that we investigated. While at high density the bonding geometry of In atoms is mostly octahedral-like as in the cubic crystalline phase of the ternary compound In3SbTe2, at low density we observed a sizable fraction of tetrahedral-like geometries similar to those present in the crystalline phase of the two binary compounds InTe and InSb that the ternary system can be thought to be made of. We show that the different ratio between octahedral-like and tetrahedral-like bonding geometries has fingerprints in the optical and vibrational spectra.

Obtención de perfiles teóricos de elementos metálicos con velocidades macroscópicas

NASA Astrophysics Data System (ADS)

Cirigliano, D.; Costa, A.; Rovira, M.

El propósito de este trabajo es poder establecer -a partir de la modelización de perfiles de distintas especies- patrones de comparación observacional que permitan caracterizar los fenómenos físicos que están presentes en las estructuras que se observan. Para ello se resuelven las ecuaciones de equilibrio de ionización para un determinado átomo y una atmósfera de parámetros determinados. A partir de ello se definen las poblaciones para los distintos grados de ionización. Considerando distintas configuraciones e intensidades de flujos de masa se deducen la función fuente, el espesor óptico y se calculan los perfiles de las distintas líneas. Se obtuvieron perfiles teóricos de líneas del CII, CIV y del OIV para flujos entrante, saliente y pasante. La forma del perfil, las intensidades relativas entre los distintos flujos y el corrimiento Doppler da cuenta de una caracterización teórica a partir de la cual se comparará con observaciones.

Structure and thermoelectric property of Te doped paracostibite CoSb1-xTexS compounds

NASA Astrophysics Data System (ADS)

You, Yonghui; Su, Xianli; Liu, Wei; Yan, Yonggao; Fu, Jiefei; Cheng, Xin; Zhang, Cheng; Tang, Xinfeng

2018-06-01

Paracostibite (CoSbS), a newly developed thermoelectric material, has aroused lots of interest due to its highly earth abundant and inexpensive constituent elements and potential application for thermoelectric power generation in the intermediate temperature range. Herein, a series of CoSb1-xTexS (x = 0-0.09) compounds were prepared by vacuum melting and annealing followed by SPS processing, and the effects of Te doping on the structure and thermoelectric properties were systematically investigated. Doping Te on the Sb site increases the carrier concentration up to 7.24 × 1020 cm-3 for CoSb0.93Te0.07S compound which is several orders of magnitude higher than that of un-doped CoSbS, and enhances the power factor. The maximum power factor of 14.07 μW cm-1 K-2 is attained at 900 K. Concomitantly, doping with Te on the Sb site leads to effective scattering of heat carrying phonon, accompanying with a strong suppression of the thermal conductivity with the increase of Te content, resulting in an increase of the ZT. A maximum ZT of 0.43 at 900 K is attained for CoSb0.93Te0.07S compound, which is 139% higher than that of un-doped CoSbS compound.

Thermoelectric materials ternary penta telluride and selenide compounds

DOEpatents

Sharp, Jeffrey W.

2001-01-01

Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

Thermoelectric materials: ternary penta telluride and selenide compounds

DOEpatents

Sharp, Jeffrey W.

2002-06-04

Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl.sub.2 SnTe.sub.5, Tl.sub.2 GeTe.sub.5, K.sub.2 SnTe.sub.5 and Rb.sub.2 SnTe.sub.5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te.sub.5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (.kappa..sub.g). The first substructure of anion chains indicates significant anisotropy in the thermoelectric characteristics of the resulting semiconductor materials.

Enhanced photoelectrochemical aptasensing platform based on exciton energy transfer between CdSeTe alloyed quantum dots and SiO2@Au nanocomposites.

PubMed

Fan, Gao-Chao; Zhu, Hua; Shen, Qingming; Han, Li; Zhao, Ming; Zhang, Jian-Rong; Zhu, Jun-Jie

2015-04-25

High-efficient exciton energy transfer between CdSeTe alloyed quantum dots and SiO2@Au nanocomposites was applied to develop an enhanced photoelectrochemical aptasensing platform with ultrahigh sensitivity, good selectivity, reproducibility and stability.

Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices

PubMed Central

2012-01-01

We perform accurate tight binding simulations to design type-II short-period CdSe/ZnTe superlattices suited for photovoltaic applications. Absorption calculations demonstrate a very good agreement with optical results with threshold strongly depending on the chemical species near interfaces. PMID:23031315

Electrochemical control over photoinduced electron transfer and trapping in CdSe-CdTe quantum-dot solids.

PubMed

Boehme, Simon C; Walvis, T Ardaan; Infante, Ivan; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Houtepen, Arjan J

2014-07-22

Understanding and controlling charge transfer between different kinds of colloidal quantum dots (QDs) is important for devices such as light-emitting diodes and solar cells and for thermoelectric applications. Here we study photoinduced electron transfer between CdTe and CdSe QDs in a QD film. We find that very efficient electron trapping in CdTe QDs obstructs electron transfer to CdSe QDs under most conditions. Only the use of thiol ligands results in somewhat slower electron trapping; in this case the competition between trapping and electron transfer results in a small fraction of electrons being transferred to CdSe. However, we demonstrate that electron trapping can be controlled and even avoided altogether by using the unique combination of electrochemistry and transient absorption spectroscopy. When the Fermi level is raised electrochemically, traps are filled with electrons and electron transfer from CdTe to CdSe QDs occurs with unity efficiency. These results show the great importance of knowing and controlling the Fermi level in QD films and open up the possibility of studying the density of trap states in QD films as well as the systematic investigation of the intrinsic electron transfer rates in donor-acceptor films.

II-I2-IV-VI4 (II = Sr,Ba; I = Cu,Ag; IV = Ge,Sn; VI = S,Se): Earth-Abundant Chalcogenides for Thin Film Photovoltaics

NASA Astrophysics Data System (ADS)

Zhu, Tong; Huhn, William P.; Shin, Donghyeop; Mitzi, David B.; Blum, Volker; Saparov, Bayrammurad

Chalcogenides such as CdTe, CIGSSe, and CZTSSe are successful for thin film photovoltaics (PV) but contain elements that are rare, toxic, or prone to the formation of detrimental antisite disorder. Recently, the BaCu2SnS4-xSex system has been shown to offer a prospective path to circumvent these problems. While early prototypes show efficiencies of a few percent, many avenues remain to optimize the materials, including the underlying chemical composition. In this work, we explore 16 compounds II-I2-IV-VI4 to help identify new candidate materials for PV, with predictions based on both known experimental and computationally derived structures that belong to five different space groups. We employ hybrid density functional theory (HSE06) to explore the band gap tunability by substituting different elements, and other characteristics such as the effective mass and the absorption coefficient. Compounds containing Cu (rather than Ag) are found to have direct or nearly direct band gaps. Depending on the compound, replacing S with Se leads to a decrease of the predicted band gaps by 0.2-0.8 eV and to somewhat decreasing hole effective masses.

Structural and dynamical studies of molecular and network forming chalcogenide glasses and supercooled liquids with NMR and Raman spectroscopy

NASA Astrophysics Data System (ADS)

Gjersing, Erica Lee

The techniques of Nuclear Magnetic Resonance (NMR) and Raman spectroscopy have been employed to study structure and dynamics in Ge-Se, Ge/As-Te, and As-S binary and complex Ge-As-Te and P-As-S ternary chalcogenide glasses. Structural studies were conducted on Ge-Se glasses and on binary Ge/As-Te and ternary Ge-As-Te systems. The structure of the GexSe100-x glass series, with 5≤x≤33, is investigated with 77Se Magic Angle Spinning (MAS) NMR and then compared with three different proposed structural models. For the binary Ge-Te and As-Te and ternary Ge-As-Te glass systems the structure is studied using Raman spectroscopy and correlated with physical properties such as molar volume, viscosity, optical band gap and thermophysical properties. Studies on glass transition dynamics were conducted on systems with a range of structural features including an As4S3 inorganic molecular glass former, an As-P-S system where molecules are bonded to the As-S network, and network glasses in the Ge-Se system. Timescales of the rotational dynamics of As4S3 cage molecules in the molecular As-sulfide glass and supercooled liquid show remarkably large decoupling from the timescales of viscous flow and shear relaxation at temperatures below and near Tg (312K). Next, the dynamic behavior of a (As 2S3)90(P2S5)10 glass, which is proposed to consist of As2P2S8 molecular structures which are connected to an As-S network, is investigated with 31P NMR. The rotational dynamics of selenium chains in network forming GexSe100-x glasses and supercooled liquids with 5≤x≤23 are investigated with variable temperature 77Se NMR spectroscopy to determine the relationship between rigidity percolation and dynamic behavior. The timescale of the motion of the Se atoms is observed to be nearly identical for x≤17 and ≤2.36. However, for the x=20 and 23 compositions where ≤2.4, above the rigidity percolation threshold, the timescale slows down abruptly. Finally, the Ge20Se 80 glass and supercooled liquid have been the focus of a variable temperature Raman spectroscopy study to investigate the vibrational mode softening behavior and the importance of vibrational entropy in glass transition.

Theoretical calculations of structural, electronic, and elastic properties of CdSe1-x Te x : A first principles study

NASA Astrophysics Data System (ADS)

M, Shakil; Muhammad, Zafar; Shabbir, Ahmed; Muhammad Raza-ur-rehman, Hashmi; M, A. Choudhary; T, Iqbal

2016-07-01

The plane wave pseudo-potential method was used to investigate the structural, electronic, and elastic properties of CdSe1-x Te x in the zinc blende phase. It is observed that the electronic properties are improved considerably by using LDA+U as compared to the LDA approach. The calculated lattice constants and bulk moduli are also comparable to the experimental results. The cohesive energies for pure CdSe and CdTe binary and their mixed alloys are calculated. The second-order elastic constants are also calculated by the Lagrangian theory of elasticity. The elastic properties show that the studied material has a ductile nature.

PAL spectroscopy of rare-earth doped Ga-Ge-Te/Se glasses

NASA Astrophysics Data System (ADS)

Shpotyuk, Ya.; Ingram, A.; Shpotyuk, O.

2016-04-01

Positron annihilation lifetime (PAL) spectroscopy was applied for the first time to study free-volume void evolution in chalcogenide glasses of Ga-Ge-Te/Se cut-section exemplified by glassy Ga10Ge15Te75 and Ga10Ge15Te72Se3 doped with 500 ppm of Tb3+ or Pr3+. The collected PAL spectra reconstructed within two-state trapping model reveal decaying tendency in positron trapping efficiency in these glasses under rare-earth doping. This effect results in unchanged or slightly increased defect-related lifetimes τ2 at the cost of more strong decrease in I2 intensities, as well as reduced positron trapping rate in defects and fraction of trapped positrons. Observed changes are ascribed to rare-earth activated elimination of intrinsic free volumes associated mainly with negatively-charged states of chalcogen atoms especially those neighboring with Ga-based polyhedrons.

Superconductivity in the 2-Dimensional Homologous Series AMm Bi3 Q5+m (m=1, 2) (A=Rb, Cs; M=Pb, Sn; Q=Se, Te).

PubMed

Malliakas, Christos D; Chung, Duck Young; Claus, Helmut; Kanatzidis, Mercouri G

2018-05-17

Superconductivity in the two-dimensional AM m Bi 3 Q 5+m family of semimetals is reported. The AMBi 3 Te 6 (m=1) and AM 2 Bi 3 Te 7 (m=2) members of the homologous series with A=Rb, Cs and M=Pb, Sn undergo a bulk superconducting transition ranging from 2.7 to 1.4 K depending on the composition. The estimated superconducting volume fraction is about 90 %. Superconducting phase diagrams as a function of chemical pressure are constructed for the solid solution products of each member of the homologous series, AMBi 3-x Sb x Te 6-y Se y and AM 2 Bi 3-x Sb x Te 7-y Se y (0≤x≤3 or 0≤y≤2). The structural flexibility of the ternary AM m M' 3 Te 5+m semiconducting homology to form isostructural analogues with a variety of metals, M=Pb, Sn; M'=Bi, Sb, gives access to a large number of electronic configurations and superconductivity due to chemical pressure effects. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Influence of Sintering Temperature on the Microstructure and Thermoelectric Properties of n-Type Bi2Te3- x Se x Nanomaterials

NASA Astrophysics Data System (ADS)

Du, Y.; Cai, K. F.; Li, H.; An, B. J.

2011-05-01

Pure Bi2Te3 and Bi2Se3 nanopowders were hydrothermally synthesized, and n-type Bi2Te3- x Se x bulk samples were prepared by hot pressing a mixture of Bi2Te3 and Bi2Se3 nanopowders at 623 K, 648 K or 673 K and 80 MPa in vacuum. The phase composition of the powders and bulk samples were characterized by x-ray diffraction. The morphology of the powders was examined by transmission electron microscopy. The microstructure and composition of the bulk samples were characterized by field-emission scanning electron microscopy and energy-dispersive x-ray spectroscopy, respectively. The density of the samples increased with sintering temperature. The samples were somewhat oxidized, and the amount of oxide (Bi2TeO5) present increased with sintering temperature. The samples consisted of sheet-like grains with a thickness less than 100 nm. Seebeck coefficient, electrical conductivity, and thermal conductivity of the samples were measured from room temperature up to 573 K. Throughout the temperature range investigated, the sample sintered at 623 K had a higher power factor than the samples sintered at 648 K or 673 K.

Electrochemiluminescence energy transfer-promoted ultrasensitive immunoassay using near-infrared-emitting CdSeTe/CdS/ZnS quantum dots and gold nanorods

PubMed Central

Li, Lingling; Chen, Ying; Lu, Qian; Ji, Jing; Shen, Yuanyuan; Xu, Mi; Fei, Rong; Yang, Guohai; Zhang, Kui; Zhang, Jian-Rong; Zhu, Jun-Jie

2013-01-01

The marriage of energy transfer with electrochemiluminescence has produced a new technology named electrochemiluminescence energy transfer (ECL-ET), which can realize effective and sensitive detection of biomolecules. To obtain optimal ECL-ET efficiency, perfect energy overlapped donor/acceptor pair is of great importance. Herein, we present a sensitive ECL-ET based immunosensor for the detection of tumor markers, using energy tunable CdSeTe/CdS/ZnS double shell quantum dots (QDs) and gold nanorods (GNRs) as the donor and acceptor, respectively. Firstly a facile microwave-assisted strategy for the synthesis of green- to near-infrared-emitting CdSeTe/CdS/ZnS QDs with time- and component-tunable photoluminescence was proposed. And, on the basis of the adjustable optical properties of both CdSeTe/CdS/ZnS QDs and GNRs, excellent overlap between donor emission and acceptor absorption can be obtained to ensure effective ECL-ET quenching, thus improving the sensing sensitivity. This method represents a novel approach for versatile detection of biomolecules at low concentrations. PMID:23524874

Synthesis of colloidal Zn(Te,Se) alloy quantum dots

NASA Astrophysics Data System (ADS)

Asano, H.; Arai, K.; Kita, M.; Omata, T.

2017-10-01

Colloidal Zn(Te1-x Se x ) quantum dots (QDs), which are highly mismatched semiconductor alloys, were synthesized by the hot injection of an organometallic solution, and the composition and size dependence of their optical gap were studied together with the theoretical calculation using the finite-depth-well effective mass approximation. The optical gaps exhibited considerable negative deviation from the mole fraction weighted mean optical gaps of ZnTe and ZnSe, i.e. a large optical gap bowing was observed, similar to the bulk and thin-film alloys. The composition and size dependence of optical gaps agreed well with theoretically calculated ones employing a bowing parameter similar to that of the bulk alloys; therefore, the extent of the optical gap bowing in these alloy QDs is concluded to be the same as that in bulk and thin-film alloys. The optical gaps of Zn(Te1-x Se x ) QDs with diameters of 3.5-5 nm, where x ~ 0.35, were close to the energy corresponding to green light, indicating that those QDs are very promising as green QD-phosphors.

Two-dimensional topological insulators with tunable band gaps: Single-layer HgTe and HgSe

DOE PAGES

Li, Jin; He, Chaoyu; Meng, Lijun; ...

2015-09-14

Here, we report that two-dimensional (2D) topological insulators (TIs) with large band gaps are of great importance for the future applications of quantum spin Hall (QSH) effect. Employing ab initio electronic calculations we propose a novel type of 2D topological insulators, the monolayer (ML) low-buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gap. We demonstrate that LB HgTe (HgSe) monolayers undergo a trivial insulator to topological insulator transition under in-plane tensile strain of 2.6% (3.1%) due to the combination of the strain and the spin orbital coupling (SOC) effects. Furthermore, the band gaps can be tunedmore » up to large values (0.2 eV for HgTe and 0.05 eV for HgSe) by tensile strain, which far exceed those of current experimentally realized 2D quantum spin Hall insulators. Our results suggest a new type of material suitable for practical applications of 2D TI at room-temperature.« less

Biogenic SeNPs from Bacillus mycoides SelTE01 and Stenotrophomonas maltophilia SelTE02: Characterization with reference to their associated organic coating

NASA Astrophysics Data System (ADS)

Piacenza, Elena; Bulgarini, Alessandra; Lampis, Silvia; Vallini, Giovanni; Turner, Raymond J.

2017-08-01

The exploitation of biological systems (i.e. plants, fungi and bacteria) for the production of nanomaterials relies on their ability to bioconvert toxic metal(loid) ions into their less toxic and bioavailable elemental states forming mainly nanoparticles (NPs) or nanorods (NRs). Further, these methods of nanomaterial production are nowadays recognized as eco-friendly alternatives to the chemical synthesis processes. A common feature among the so-called biogenic nanomaterials is the presence of an organic layer surrounding them. However, we are just learning the existing relation between biogenic nanostructures and their organic material. Our work is focused on the study of bacterial strains for the production of selenium nanoparticles (SeNPs) as end product of selenite (SeO32 -) bioconversion. In this context, our previous reports described the ability of two bacteria, namely Bacillus mycoides SelTE01 and Stenotrophomonas maltophilia SelTE02, to generate SeNPs, which were surrounded by organic material. Here, the potential role of this organic material as stabilizing agent of SeNPs was investigated altering both the bacteria cells culturing and the SeNPs extraction procedure, in order to understand the interaction between these two elements in suspension. As a result, SeNPs produced by both bacterial strains showed the tendency to aggregate when subjected to the treatments tested, suggesting an involvement of the surrounding organic material in their stabilization in suspension.

Transannular E···E' Interactions in Neutral, Radical Cationic, and Dicationic Forms of cyclo-[E(CH2CH2CH2)2E'] (E, E' = S, Se, Te, and O) with Structural Feature: Dynamic and Static Behavior of E···E' Elucidated by QTAIM Dual Functional Analysis.

PubMed

Hayashi, Satoko; Matsuiwa, Kohei; Nishizawa, Nozomu; Nakanishi, Waro

2015-12-18

The nature of the transannular E-∗-E' interactions in neutral, radical cationic, and dicationic forms of cyclo-E(CH2CH2CH2)2E' (1) (E, E' = S, Se, Te, and O) (1, 1(•+), and 1(2+), respectively) is elucidated by applying QTAIM dual functional analysis (QTAIM-DFA). Hb(rc) are plotted versus Hb(rc) - Vb(rc)/2 for the data of E-∗-E' at BCPs in QTAIM-DFA, where ∗ emphasizes the existence of BCP. Plots for the fully optimized structures are analyzed by the polar coordinate (R, θ) representation. Those containing the perturbed structures are by (θp, κp): θp corresponds to the tangent line of the plot, and κp is the curvature. While (R, θ) describes the static nature, (θp, κp) represents the dynamic nature of interactions. The nature is well-specified by (R, θ) and (θp, κp). E-∗-E' becomes stronger in the order of 1 < 1(•+) < 1(2+), except for O-∗-O. While E-∗-E' (E, E' = S, Se, and Te) in 1(2+) are characterized as weak covalent bonds, except for S-∗-Te (MC nature through CT) and Se-∗-Te (TBP nature through CT), O-∗-E' seems more complex. The behavior of E-∗-E' in 1(2+) is very close to that of cyclo-E(CH2CH2CH2)E' (E, E' = S, Se, Te, and O), except for O-∗-O.

Suitability of II-VI semiconductors for photonic applications: common-anion versus common-cation superlattices

NASA Astrophysics Data System (ADS)

Tit, Nacir

2003-12-01

Based on the sp3s tight-binding method, the electronic band strcutures of both common-anion and common-cation II-VI superlattices (SLs) are investigated. As models, we took for the former the case of CdTe/ZnTe(001) SLs where the common anion is confirmed to yield a vanishing or a small valence-band offset (VBO) and the biaxial strain, of course, contributes in the valence-band splittings and yield type-I SLs in most of the studied cases. Whereas, we tok as a second model two different SLs: the ZnS/ZnSe(001) and ZnSe/ZnTe(001) SLs. We have confirmed that the common-cation SLs cannot have a vanishing conduction-band offsets (CBO), as speculated, but rather the CBO could be as large as the VBO. The biaxial strain, again, can participate here in the formation of the band offsets and yield either type-I SLs, as in the case of the ZnS/ZnSe, or type-II SLs, as in the case of ZnSe/ZnTe. Moreover, the reason why some type-II SLs, such as ZnSe/ZnTe(001), could be useful as photonic devices is explained by the tendency of the carriers to confine near the interface as a result of a strong photoluminenscence data and conclusions have been drawn about the strain morpholgy and the structural and optical qualities of the experimental samples.

Relations among Posttraumatic Stress Disorder, Comorbid Major Depression, and HPA Function: A Systematic Review and Meta-Analysis

PubMed Central

Morris, Matthew C.; Compas, Bruce E.; Garber, Judy

2012-01-01

Exposure to traumatic stress is associated with increased risk for posttraumatic stress disorder (PTSD) and alterations of hypothalamic-pituitary-adrenocortical (HPA) function. Research linking traumatic stress with HPA function in PTSD has been inconsistent, however, in part due to (a) the inclusion of trauma-exposed individuals without PTSD (TE) in control groups and (b) a failure to consider comorbid major depressive disorder (MDD) and moderating variables. This meta-analysis of 47 studies (123 effect sizes, N=6,008 individuals) revealed that daily cortisol output was lower for PTSD (d=−.36, SE=.15, p=.008) and PTSD+MDD (d=−.65, SE=.25, p=.008) groups relative to no trauma controls (NTC); TE and NTC groups did not differ significantly from each other. Afternoon/evening cortisol was lower in TE (d=−.25, SE=.09, p=.007) and PTSD (d=−.27, SE=.12, p=.021) groups and higher in PTSD+MDD groups (d=.49, SE=.24, p=.041) relative to NTC. Post-DST cortisol levels were lower in PTSD (d=−.40, SE=.12, p<.001), PTSD+MDD (d=−.65, SE=.14, p<.001), and TE groups (d=−.53, SE=.14, p<.001) relative to NTC. HPA effect sizes were moderated by age, sex, time since index event, and developmental timing of trauma exposure. These findings suggest that enhanced HPA feedback function may be a marker of trauma-exposure rather than a specific mechanism of vulnerability for PTSD, whereas lower daily cortisol output may be associated with PTSD in particular. PMID:22459791

Electronic, optical properties and chemical bonding in six novel 1111-like chalcogenide fluorides AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) from first principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bannikov, V.V.; Shein, I.R.; Ivanovskii, A.L., E-mail: ivanovskii@ihim.uran.ru

2012-12-15

Employing first-principles band structure calculations, we have examined the electronic, optical properties and the peculiarities of the chemical bonding for six newly synthesized layered quaternary 1111-like chalcogenide fluorides SrAgSF, SrAgSeF, SrAgTeF, BaAgSF, BaAgSeF, and SrCuTeF, which are discussed in comparison with some isostructural 1111-like chalcogenide oxides. We found that all of the studied phases AMChF (A=Sr, Ba; M=Cu, Ag; and Ch=S, Se, Te) are semiconductors for which the fitted 'experimental' gaps lie in the interval from 2.23 eV (for SrAgSeF) to 3.07 eV (for SrCuTeF). The near-Fermi states of AMChF are formed exclusively by the valence orbitals of the atomsmore » from the blocks (MCh); thus, these phases belong to the layered materials with 'natural multiple quantum wells'. The bonding in these new AMChF phases is described as a high-anisotropic mixture of ionic and covalent contributions, where ionic M-Ch bonds together with covalent M-Ch and Ch-Ch bonds take place inside blocks (MCh), while inside blocks (AF) and between the adjacent blocks (MCh)/(AF) mainly ionic bonds emerge. - Graphical Abstract: Isoelectronic surface for SrAgSeF and atomic-resolved densities of states for SrAgTeF, and SrCuTeF. Highlights: Black-Right-Pointing-Pointer Very recently six new layered 1111-like chalcogenide fluorides AMChF were synthesized. Black-Right-Pointing-Pointer Electronic, optical properties for AMChF phases were examined from first principles. Black-Right-Pointing-Pointer All these materials are characterized as non-magnetic semiconductors. Black-Right-Pointing-Pointer Bonding is highly anisotropic and includes ionic and covalent contributions. Black-Right-Pointing-Pointer Introduction of magnetic ions in AMChF is proposed for search of novel magnetic materials.« less

Synthesis, properties and applications of 2D layered MIIIXVI (M = Ga, In; X = S, Se, Te) materials.

PubMed

Xu, Kai; Yin, Lei; Huang, Yun; Shifa, Tofik Ahmed; Chu, Junwei; Wang, Feng; Cheng, Ruiqing; Wang, Zhenxing; He, Jun

2016-09-29

Group III-VI compounds M III X VI (M = Ga, In; X = S, Se, Te) are one class of important 2D layered materials and are currently attracting increasing interest due to their unique electronic and optoelectronic properties and their great potential applications in various other fields. Similar to 2D layered transition metal dichalcogenides (TMDs), M III X VI also have the significant merits of ultrathin thickness, ultrahigh surface-to-volume ratio, and high compatibility with flexible devices. More impressively, in contrast with TMDCs, M III X VI demonstrate many superior properties, such as direct band gap electronic structure, high carrier mobility, rare p-type electronic behaviors, high charge density, and so on. These unique characteristics cause high-performance device applications in electronics, optoelectronics, and optics. In this review, we aim to provide a summary of the state-of-the-art of research activities in 2D layered M III X VI materials. The scope of the review covers the synthesis and properties of 2D layered M III X VI materials and their van der Waals heterostructures. We especially focus on the applications in electronics and optoelectronics. Moreover, the review concludes with some perspectives on future developments in this field.

Completing the Heterocubane Family [Cp*AlE]4 (E = O, S, Se, and Te) by Selective Oxygenation and Sulfuration of [Cp*Al]4: Density Functional Theory Calculations of [Cp*AlE]4 and Reactivity of [Cp*AlO]4 toward Hydrolysis.

PubMed

Stelzer, Adrian C; Hrobárik, Peter; Braun, Thomas; Kaupp, Martin; Braun-Cula, Beatrice

2016-05-16

The subvalent aluminum compound [Cp*Al]4 (1) reacts with dioxygen, N2O, or sulfur to yield the heterocubane complexes [Cp*AlX]4 [X = O (2) and S (3)]. Treatment of [Cp*AlO]4 (2) with (tBuO)3SiOH gave [(tBuO)3SiOAlO]4 (6) and Cp*H. The structures and spectroscopic data of the Al clusters are supported by density functional theory (DFT) calculations, which also demonstrate the importance of noncovalent interactions (NCI) in oligomeric Al(I) complexes as well as in [Cp*AlS]4 and the heavier homologues of Se and Te. The computed (27)Al NMR shifts indicate a deshielding at the Al centers with increasing electronegativity of the chalcogen atom as well as significant spin-orbit shielding effects within the heavier heterocubane [Al4E4] cores. Further hydrolysis of 6 with an additional amount of silanol in the presence of water resulted in the formation of [Al4(OH)6(OH2)2(OSiOtBu3)6] (7), which shows a structural motif found in boehmite and diaspore.

The efficiency of therapeutic erythrocytapheresis compared to phlebotomy: a mathematical tool for predicting response in hereditary hemochromatosis, polycythemia vera, and secondary erythrocytosis.

PubMed

Evers, Dorothea; Kerkhoffs, Jean-Louis; Van Egmond, Liane; Schipperus, Martin R; Wijermans, Pierre W

2014-06-01

Recently, therapeutic erythrocytapheresis (TE) was suggested to be more efficient in depletion of red blood cells (RBC) compared to manual phlebotomy in the treatment of hereditary hemochromatosis (HH), polycythemia vera (PV), and secondary erythrocytosis (SE). The efficiency rate (ER) of TE, that is, the increase in RBC depletion achieved with one TE cycle compared to one phlebotomy procedure, can be calculated based on estimated blood volume (BV), preprocedural hematocrit (Hct(B)), and delta-hematocrit (ΔHct). In a retrospective evaluation of 843 TE procedures (in 45 HH, 33 PV, and 40 SE patients) the mean ER was 1.86 ± 0.62 with the highest rates achieved in HH patients. An ER of 1.5 was not reached in 37.9% of all procedures mainly concerning patients with a BV below 4,500 ml. In 12 newly diagnosed homozygous HH patients, the induction phase duration was medially 38.4 weeks (medially 10.5 procedures). During the maintenance treatment of HH, PV, and SE, the interval between TE procedures was medially 13.4 weeks. This mathematical model can help select the proper treatment modality for the individual patient. Especially for patients with a large BV and high achievable ΔHct, TE appears to be more efficient than manual phlebotomy in RBC depletion thereby potentially reducing the numbers of procedures and expanding the interprocedural time period for HH, PV, and SE. © 2013 Wiley Periodicals, Inc.

Topological characters in Fe (Te1 -xSex ) thin films

NASA Astrophysics Data System (ADS)

Wu, Xianxin; Qin, Shengshan; Liang, Yi; Fan, Heng; Hu, Jiangping

2016-03-01

We investigate topological properties in the Fe(Te,Se) thin films. We find that the single layer FeTe1 -xSex has nontrivial Z2 topological invariance which originates from the parity exchange at the Γ point of the Brillouin zone. The nontrivial topology is mainly controlled by the Te(Se) height. Adjusting the anion height, which can be realized as the function of lattice constants and x in FeTe1 -xSex , can drive a topological phase transition. In a bulk material, the two-dimensional Z2 topology invariance is extended to a strong three-dimensional one. In a thin film, we predict that the topological invariance oscillates with the number of layers. The results can also be applied to iron pnictides. Our research establishes FeTe1 -xSex as a unique system to integrate high-Tc superconductivity and topological properties in a single electronic structure.

Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

PubMed Central

Chen, Xin; Parker, David; Singh, David J.

2013-01-01

We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7–9 × 1019 cm−3 depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides. PMID:24196778

Bond strength of etch-and-rinse and self-etch adhesive systems to enamel and dentin irradiated with a novel CO2 9.3 μm short-pulsed laser for dental restorative procedures.

PubMed

Rechmann, Peter; Bartolome, N; Kinsel, R; Vaderhobli, R; Rechmann, B M T

2017-12-01

The objective of this study was to evaluate the influence of CO 2 9.3 μm short-pulsed laser irradiation on the shear bond strength of composite resin to enamel and dentin. Two hundred enamel and 210 dentin samples were irradiated with a 9.3 µm carbon dioxide laser (Solea, Convergent Dental, Inc., Natick, MA) with energies which either enhanced caries resistance or were effective for ablation. OptiBond Solo Plus [OptiBondTE] (Kerr Corporation, Orange, CA) and Peak Universal Bond light-cured adhesive [PeakTE] (Ultradent Products, South Jordan, UT) were used. In addition, Scotchbond Universal [ScotchbondSE] (3M ESPE, St. Paul, MN) and Peak SE self-etching primer with Peak Universal Bond light-cured adhesive [PeakSE] (Ultradent Products) were tested. Clearfil APX (Kuraray, New York, NY) was bonded to the samples. After 24 h, a single plane shear bond test was performed. Using the caries preventive setting on enamel resulted in increased shear bond strength for all bonding agents except for self-etch PeakSE. The highest overall bond strength was seen with PeakTE (41.29 ± 6.04 MPa). Etch-and-rinse systems achieved higher bond strength values to ablated enamel than the self-etch systems did. PeakTE showed the highest shear bond strength with 35.22 ± 4.40 MPa. OptiBondTE reached 93.8% of its control value. The self-etch system PeakSE presented significantly lower bond strength. The shear bond strength to dentin ranged between 19.15 ± 3.49 MPa for OptiBondTE and 43.94 ± 6.47 MPa for PeakSE. Etch-and-rinse systems had consistently higher bond strength to CO 2 9.3 µm laser-ablated enamel. Using the maximum recommended energy for dentin ablation, the self-etch system PeakSE reached the highest bond strength (43.9 ± 6.5 MPa).

Effect of Te substitution on crystal structure and transport properties of AgBiSe2 thermoelectric material.

PubMed

Goto, Y; Nishida, A; Nishiate, H; Murata, M; Lee, C H; Miura, A; Moriyoshi, C; Kuroiwa, Y; Mizuguchi, Y

2018-02-20

Silver bismuth diselenide (AgBiSe 2 ) has attracted much attention as an efficient thermoelectric material, owing to its intrinsically low lattice thermal conductivity. While samples synthesized using a solid-state reaction showed n-type conductivity and their dimensionless figure of merit (ZT) reached ∼1 by electron doping, theoretical calculations predicted that a remarkably high thermoelectric performance can be achieved in p-type AgBiSe 2 . In this paper, we present the effect of Te substitution on the crystal structure and thermoelectric properties of AgBiSe 2 , expecting p-type conductivity due to the shallowing of the energy potential of the valence band. We found that all AgBiSe 2-x Te x (x = 0-0.8) prepared using a solid-state reaction exhibits n-type conductivity from 300 to 750 K. The room-temperature lattice thermal conductivity decreased to as low as 0.3 W m -1 K -1 by Te substitution, which was qualitatively described using the point defect scattering model for the solid solution. We show that ZT reaches ∼0.6 for x = 0.8 at a broad range of temperatures, from 550 to 750 K, due to the increased power factor, although the carrier concentration has not been optimized yet.

Thermoelectric Properties of Bi2Te2Se Compensated by Native Defects and Sn Doping

NASA Astrophysics Data System (ADS)

Fuccillo, M. K.; Jia, Shuang; Charles, M. E.; Cava, R. J.

2013-06-01

In Bi2Te2Se the defect chemistry involves native defects that compete such that they can either exchange dominance or else significantly compensate each other. Here we show how the net carrier concentration, n - p, which depends on the relative amounts of these defects and is readily obtained from Hall data, can be used as a fundamental materials parameter to describe the varied behavior of the thermoelectric properties as a function of compensation. We report the effects of tuning this parameter over multiple orders of magnitude by hole-doping the n-type material Bi2Te2Se0.995, which is already significantly compensated because of its Se deficiency. Crystals with different levels of hole doping were achieved by two separate approaches, namely by selecting pieces from different locations in an undoped crystal in which a systematic carrier concentration gradient had been induced by its growth conditions, and alternatively by doping with Sn for Bi. The thermoelectric power factors for Bi2- x Sn x Te2Se0.995 for x = 0, 0.002, 0.005, 0.010, and 0.040 are reported, and the dependence of the transport properties on the extent of compensation is discussed.

Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, X. J.; Chang, Y.; Hou, Y. B.

2011-09-15

The authors report the results of successful growth of single crystalline PbSe on Si (211) substrates with ZnTe as a buffer layer by molecular beam epitaxy. Single crystalline PbSe with (511) orientation was achieved on ZnTe/Si (211), as evidenced by RHEED patterns indicative of 2 dimensional (2D) growth, x ray diffraction rocking curves with a full width at half maximum as low as 153 arc sec and mobility as large as 1.1x10{sup 4}cm{sup 2}V{sup -1}s{sup -1} at 77 K. Cross hatch patterns were found on the PbSe(511) surface in Nomarski filtered microscope images suggesting the presence of a surface thermalmore » strain relaxation mechanism, which was confirmed by Fourier transformed high resolution transmission electron microscope images.« less

Acoustical phonon anomaly in the Raman spectra of intermediate valent TmSe 1-xTe x and Tm xSe

NASA Astrophysics Data System (ADS)

Treindl, A.; Wachter, P.

1980-12-01

In the Raman spectra of intermediate valent TmSe 1- xTe x the same anomaly within the acoustical phonon band at 60 cm -1 is found as in Tm xSe. The connection of this anomaly with the valence mixing is confirmed. In a one-dimensional model calculation it is shown that a renormalized LA dispersion curve can produce the observed anomalous peak in the phonon DOS. As an alternative interpretation the possibility of a low energy electronic excitation at 60 cm -1 is discussed.

Electrical and photoresponse properties of vacuum deposited Si/Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes

NASA Astrophysics Data System (ADS)

Rao, Gowrish K.

2017-04-01

The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, such as diode ideality factor, barrier height, the thickness of the depletion region, trap depth, rise and decay times of photocurrent, were determined. Conduction mechanism in the photodiodes is discussed with the help of widely accepted theoretical models.

Crystallization kinetics and Avrami index of Sb-doped Se-Te-Sn chalcogenide glasses

NASA Astrophysics Data System (ADS)

Dwivedi, D. K.; Rao, Vandita; Mehta, N.; Chandel, N.

2018-05-01

Bulk amorphous samples of Sb-substituted Se78-xTe20Sn2Sbx (0 < x < 6) have been prepared using melt quench technique. The structure of Se78-xTe20Sn2Sbx (x = 0, 2, 4, 6) glassy alloys has been investigated using X-ray diffraction technique. Calorimetric studies of the prepared samples have been performed under non-isothermal conditions using differential scanning calorimetry (DSC) and glass transition temperature as well as crystallization temperature has been evaluated using DSC scans. The activation energy of crystallization kinetics (Ec) has been determined using model-free approaches such as Kissinger, Ozawa, Tang and Starink methods. The Avrami index (n) and frequency factor (Ko) have been calculated by Matusita and Augis-Benett method.

Superconducting FeSe0.1Te0.9 thin films integrated on Si-based substrates

NASA Astrophysics Data System (ADS)

Huang, Jijie; Chen, Li; Li, Leigang; Qi, Zhimin; Sun, Xing; Zhang, Xinghang; Wang, Haiyan

2018-05-01

With the goal of integrating superconducting iron chalcogenides with Si-based electronics, superconducting FeSe0.1Te0.9 thin films were directly deposited on Si and SiOx/Si substrates without any buffer layer by a pulsed laser deposition (PLD) method. Microstructural characterization showed excellent film quality with mostly c-axis growth on both types of substrates. Superconducting properties (such as superconducting transition temperature T c and upper critical field H c2) were measured to be comparable to that of the films on single crystal oxide substrates. The work demonstrates the feasibility of integrating superconducting iron chalcogenide (FeSe0.1Te0.9) thin films with Si-based microelectronics.

Optical properties and band alignments in ZnTe nanoparticles/MoS2 layer hetero-interface using SE and KPFM studies

NASA Astrophysics Data System (ADS)

Sharma, Intu; Mehta, B. R.

2017-11-01

Integration of a layered two-dimensional (2D) material with a non-2D material provides a platform where one can modulate and achieve the properties desired for various next-generation electronic and opto-electronic applications. Here, we investigated ZnTe nanoparticles/MoS2 hetero-interfaces with the thickness of the MoS2 varying from few to multilayer. High-resolution transmission electron microscopy was used to observe the crystalline behaviour of the ZnTe nanoparticles, while the number of MoS2 layers was investigated using Raman measurements. Spectroscopic ellipsometry (SE) analysis based on the five-layer fitting model was used to analyse the optical behaviour of the heterojunction, where the excitonic features corresponding to the MoS2 layers and absorption features due to the ZnTe nanoparticles are observed. From the Kelvin probe force microscopy (KPFM) measurements, the surface potential (SP) of the ZnTe nanoparticles/MoS2 is found to be different in comparison with the SP of the ZnTe nanoparticles and MoS2, which is indicative of the charge transfer at the ZnTe nanoparticles/MoS2 hetero-interface. Various parameters obtained using SE and KPFM measurements were used to propose energy band alignments at the ZnTe nanoparticles/MoS2 hetero-interface. In addition, an interface photovoltage of 193 mV was obtained by carrying out KPFM measurements under illuminating condition.

Fe-Cluster Compounds of Chalcogenides: Candidates for Rare-Earth-Free Permanent Magnet and Magnetic Nodal-Line Topological Material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xin; Wang, Cai-Zhuang; Kim, Minsung

Here, Fe-cluster-based crystal structures are predicted for chalcogenides Fe 3X 4 (X = S, Se, Te) using an adaptive genetic algorithm. Topologically different from the well-studied layered structures of iron chalcogenides, the newly predicted structures consist of Fe clusters that are either separated by the chalcogen atoms or connected via sharing of the vertex Fe atoms. Additionally, using first-principles calculations, we demonstrate that these structures have competitive or even lower formation energies than the experimentally synthesized Fe 3X 4 compounds and exhibit interesting magnetic and electronic properties. In particular, we show that Fe 3X 4 can be a good candidatemore » as a rare-earth-free permanent magnet and Fe 3X 4 can be a magnetic nodal-line topological material.« less

Fe-Cluster Compounds of Chalcogenides: Candidates for Rare-Earth-Free Permanent Magnet and Magnetic Nodal-Line Topological Material

DOE PAGES

Zhao, Xin; Wang, Cai-Zhuang; Kim, Minsung; ...

2017-11-13

Here, Fe-cluster-based crystal structures are predicted for chalcogenides Fe 3X 4 (X = S, Se, Te) using an adaptive genetic algorithm. Topologically different from the well-studied layered structures of iron chalcogenides, the newly predicted structures consist of Fe clusters that are either separated by the chalcogen atoms or connected via sharing of the vertex Fe atoms. Additionally, using first-principles calculations, we demonstrate that these structures have competitive or even lower formation energies than the experimentally synthesized Fe 3X 4 compounds and exhibit interesting magnetic and electronic properties. In particular, we show that Fe 3X 4 can be a good candidatemore » as a rare-earth-free permanent magnet and Fe 3X 4 can be a magnetic nodal-line topological material.« less

Investigation of wide band gap semiconductors: Electrical, optical, and structural properties

NASA Astrophysics Data System (ADS)

Gong, Yinyan

Wide band gap semiconductors are important for many device applications, particularly for lasers and light emitting diodes. In this thesis, we studied (1) the enhancement, by thermal annealing, of p-type doping in Mg-doped GaN grown by metal-organic chemical vapor deposition (MOCVD), (2) the formation of type-II ZnTe quantum dots (QDs) in Zn-Se-Te multilayers with submonolayer insertion of ZnTe, as well as the mechanism of the increase of acceptor incorporation in such samples, (3) optical properties of colloidal-synthesized ZnO nanocrystals. For GaN:Mg grown by MOCVD, it is found that atomic hydrogen, generated during growth, acts as a compensating donor and thus increases the solubility of the acceptor dopant; subsequent to the growth, H can be easily removed and leaves Mg in excess of its equilibrium solubility. For Zn-Se-Te multilayers with submonolayer insertions of ZnTe, it is found that type-II ZnTe QDs are formed even with only one deposition cycle of submonolayer ZnTe. However, the density of QDs in this case is lower than for samples with three consecutive deposition cycles of ZnTe. Moreover, for Zn-Te-Se multilayers where N is deposited together with Te, it is found that N (acceptor dopant) is embedded in ZnTe-rich nanoislands, a material readily doped p-type. We note that only minimal amounts of Te are incorporated in the overall epitaxial film; thus the overall energy gap remains close to that of pure ZnSe. Finally, we studied the optical properties of collidal-synthesized nanocrystals of ZnO, a material of great interest because of its large energy gap (˜3.36 eV at room temperature (RT)) together with a high exciton binding energy (˜60 meV at RT). The photoluminescence (PL) of all our samples consists of a dominant near-band-edge UV emission and a weak broad green emission. The origin of the observed green emission is investigated, and attributed to oxygen vacancies near the surface. A simple model for the recombination process, involving free holes and oxygen vacancies, is proposed. Also the size of the ZnO spherical nanoparticles is estimated from the peak position of the green PL. The results are in good agreement with those from TEM measurements.

New pathway for the formation of metallic cubic phase Ge-Sb-Te compounds induced by an electric current

PubMed Central

Park, Yong-Jin; Cho, Ju-Young; Jeong, Min-Woo; Na, Sekwon; Joo, Young-Chang

2016-01-01

The novel discovery of a current-induced transition from insulator to metal in the crystalline phase of Ge2Sb2Te5 and GeSb4Te7 have been studied by means of a model using line-patterned samples. The resistivity of cubic phase Ge-Sb-Te compound was reduced by an electrical current (~1 MA/cm2), and the final resistivity was determined based on the stress current density, regardless of the initial resistivity and temperature, which indicates that the conductivity of Ge-Sb-Te compound can be modulated by an electrical current. The minimum resistivity of Ge-Sb-Te materials can be achieved at high kinetic rates by applying an electrical current, and the material properties change from insulating to metallic behavior without a phase transition. The current-induced metal transition is more effective in GeSb4Te7 than Ge2Sb2Te5, which depends on the intrinsic vacancy of materials. Electromigration, which is the migration of atoms induced by a momentum transfer from charge carriers, can easily promote the rearrangement of vacancies in the cubic phase of Ge-Sb-Te compound. This behavior differs significantly from thermal annealing, which accompanies a phase transition to the hexagonal phase. This result suggests a new pathway for modulating the electrical conductivity and material properties of chalcogenide materials by applying an electrical current. PMID:26902593

Predicted Realization of Cubic Dirac Fermion in Quasi-One-Dimensional Transition-Metal Monochalcogenides

NASA Astrophysics Data System (ADS)

Liu, Qihang; Zunger, Alex

2017-04-01

We show that the previously predicted "cubic Dirac fermion," composed of six conventional Weyl fermions including three with left-handed and three with right-handed chirality, is realized in a specific, stable solid state system that has been made years ago, but was not appreciated as a "cubically dispersed Dirac semimetal" (CDSM). We identify the crystal symmetry constraints and find the space group P 63/m as one of the two that can support a CDSM, of which the characteristic band crossing has linear dispersion along the principle axis but cubic dispersion in the plane perpendicular to it. We then conduct a material search using density functional theory, identifying a group of quasi-one-dimensional molybdenum monochalcogenide compounds AI(MoXVI)3 (AI=Na , K, Rb, In, Tl; XVI=S , Se, Te) as ideal CDSM candidates. Studying the stability of the A (MoX) 3 family reveals a few candidates such as Rb (MoTe) 3 and Tl (MoTe) 3 that are predicted to be resilient to Peierls distortion, thus retaining the metallic character. Furthermore, the combination of one dimensionality and metallic nature in this family provides a platform for unusual optical signature—polarization-dependent metallic vs insulating response.

Multichannel Spectroscopic Ellipsometry for CdTe Photovoltaics: from Materials and Interfaces to Solar Cells

NASA Astrophysics Data System (ADS)

Koirala, Prakash

Spectroscopic ellipsometry (SE) in the mid-infrared to ultraviolet range has been implemented in order to develop and evaluate optimization procedures for CdTe solar cells at the different stages of fabrication. In this dissertation research, real time SE (RT-SE) has been applied during the fabrication of the as-deposited CdS/CdTe solar cell. Two areas of background research were addressed before undertaking the challenging RT-SE analysis procedures. First, optical functions were parameterized versus temperature for the glass substrate and its overlayers, including three different SnO2 layers. This database has applications not only for RT-SE analysis but also for on-line monitoring of the coated glass itself at elevated temperature. Second, post-deposition modifications of substrate have been studied by infrared spectroscopic ellipsometry (IR-SE) prior to the RT-SE analysis in order to evaluate the need for such modification in the analysis. With support from these background studies, RT-SE has been implemented in analyses of the evolution of the thin film structural properties during sputter deposition of polycrystalline CdS/CdTe solar cells on the transparent conducting oxide (TCO) coated glass substrates. The real time optical spectra collected during CdS/CdTe deposition were analyzed using the optical property database for all substrate components as a function of measurement temperature. RT-SE enables characterization of the filling process of the surface roughness modulations on the top-most SnO2 substrate layer, commonly referred to as the high resistivity transparent (HRT) layer. In this filling process, the optical properties of this surface layer are modified in accordance with an effective medium theory. In addition to providing information on interface formation to the substrate during film growth, RT-SE also provides information on the bulk layer CdS growth, its surface roughness evolution, as well as overlying CdTe interface formation and bulk layer growth. Information from RT-SE at a single point during solar cell stack deposition assists in the development of a model that has been used for mapping the properties of the completed cell stack, which can then be correlated with device performance. Independent non-uniformities in the layers over the full area of the cell stack enable optimization of cell performance combinatorially. The polycrystalline CdS/CdTe thin-film solar cell in the superstrate configuration has been studied by SE using glass side illumination whereby the single reflection from the glass/film-stack interface is collected whereas that from the ambient/glass interface and those from multiple glass/film-stack reflections are rejected. The SE data analysis applies an optical model consisting of a multilayer stack with bulk and interface layers. The dielectric functions epsilonfor the solar cell component materials were obtained by variable-angle and in-situ SE. Variability in the properties of the materials are introduced through free parameters in analytical expressions for the dielectric functions. In the SE analysis of the complete cell, a step-wise procedure ranks all free parameters of the model, including thicknesses and those defining the spectra in epsilon, according to their ability to reduce the root-mean-square deviation between simulated and measured SE spectra. The results for the best fit thicknesses compare well with electron microscopy. From the optical model, including all best-fit parameters, the solar cell quantum efficiency (QE) can be simulated without free parameters, and comparisons with QE measurements have enabled the identification of losses. The capabilities have wide applications in off-line photovoltaic module mapping and in-line monitoring of coated glass at intermediate stages of production. Mapping spectroscopic ellipsometry (M-SE) has been applied in this dissertation research as an optimization procedure for polycrystalline CdS/CdTe solar cell fabrication on TCO coated glass superstrates. During fabrication of these solar cells, the structure undergoes key processing steps after the sputter-deposition of the CdS/CdTe. These steps include CdCl2 treatment of the CdTe layer and subsequent deposition of ultrathin Cu. Additional steps involve final metal back contact layer deposition and an anneal for Cu diffusion that completes the device. In this study, we have fabricated cells with variable absorber thicknesses, ranging from 0.5 to 2.5 mum, and variable CdCl2 treatment times, ranging from 5 to 30 min. Because both CdS window and Cu back contact layers are critical for determining device performance, the ability to characterize their deposition processes and determine the resulting process-property-performance relationships is important for device optimization. We have applied M-SE to map the effective thickness (volume/area) of the CdS and Cu films over 15 cm x 15 cm substrates prior to the fabrication of 16 x 16 arrays of dot cells. We report correlations of cell performance parameters with the CdCl2 treatment time and with the effective thicknesses from M-SE analysis. We demonstrate that correlations between optical/structural parameters extracted from M-SE analysis and device performance parameters facilitate process optimization. (Abstract shortened by ProQuest.).

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Sha, Yi-Gao

1995-01-01

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

High-throughput search of ternary chalcogenides for p-type transparent electrodes

PubMed Central

Shi, Jingming; Cerqueira, Tiago F. T.; Cui, Wenwen; Nogueira, Fernando; Botti, Silvana; Marques, Miguel A. L.

2017-01-01

Delafossite crystals are fascinating ternary oxides that have demonstrated transparent conductivity and ambipolar doping. Here we use a high-throughput approach based on density functional theory to find delafossite and related layered phases of composition ABX2, where A and B are elements of the periodic table, and X is a chalcogen (O, S, Se, and Te). From the 15 624 compounds studied in the trigonal delafossite prototype structure, 285 are within 50 meV/atom from the convex hull of stability. These compounds are further investigated using global structural prediction methods to obtain their lowest-energy crystal structure. We find 79 systems not present in the materials project database that are thermodynamically stable and crystallize in the delafossite or in closely related structures. These novel phases are then characterized by calculating their band gaps and hole effective masses. This characterization unveils a large diversity of properties, ranging from normal metals, magnetic metals, and some candidate compounds for p-type transparent electrodes. PMID:28266587

EXAFS and electrical studies of new narrow-gap semiconductors: InTe1-xSex and In1-xGaxTe

NASA Astrophysics Data System (ADS)

Lebedev, A. I.; Michurin, A. V.; Sluchinskaya, I. A.; Demin, V. N.; Munro, I. H.

2000-12-01

The local environment of Ga, Se and Tl atoms in InTe-based solid solutions was studied by EXAFS technique. It was shown that all investigated atoms are substitutional impurities, which enter the In(1), Te and In(2) positions in the InTe structure, respectively. The electrical measurements revealed that In1-xGaxTe and InTe1-xSex solid solutions become semiconductors at x>0.24 and >0.15, respectively.

Surface roughness estimation of MBE grown CdTe/GaAs(211)B by ex-situ spectroscopic ellipsometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karakaya, Merve, E-mail: mervegunnar@iyte.edu.tr; Bilgilisoy, Elif; Arı, Ozan

Spectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ex-situ ellipsometric data analysis. Surface roughness cannot be determined by the optical model if oxide is included. We show that roughness can be accurately estimated, without any optical model, by utilizing the correlation between SE data (namely the imaginary part of the dielectric function, or phase angle, ψ) and atomic force microscopy (AFM) roughness. and ψ values at 3.31 eV, which corresponds to E{sub 1}more » critical transition energy of CdTe band structure, are chosen for the correlation since E{sub 1} gives higher resolution than the other critical transition energies. On the other hand, due to the anisotropic characteristic of (211) oriented CdTe surfaces, SE data ( and ψ) shows varieties for different azimuthal angle measurements. For this reason, in order to estimate the surface roughness by considering these correlations, it is shown that SE measurements need to be taken at the same surface azimuthal angle. Estimating surface roughness in this manner is an accurate way to eliminate cumbersome surface roughness measurement by AFM.« less

Crystallization processes in Ge{sub 2}Sb{sub 2}Se{sub 4}Te glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Svoboda, Roman, E-mail: roman.svoboda@upce.cz; Bezdička, Petr; Gutwirth, Jan

2015-01-15

Highlights: • Crystallization kinetics of Ge{sub 2}Sb{sub 2}Se{sub 4}Te glass was studied in dependence on particle size by DSC. • All studied fractions were described in terms of the SB autocatalytic model. • Relatively high amount of Te enhances manifestation of bulk crystallization mechanisms. • XRD analysis of samples crystallized under different conditions showed correlation with DSC data. • XRD analysis revealed a new crystallization mechanism indistinguishable by DSC. - Abstract: Differential scanning calorimetry (DSC) and X-ray diffraction (XRD) analysis were used to study crystallization in Ge{sub 2}Sb{sub 2}Se{sub 4}Te glass under non-isothermal conditions as a function of the particlemore » size. The crystallization kinetics was described in terms of the autocatalytic Šesták–Berggren model. An extensive discussion of all aspects of a full-scale kinetic study of a crystallization process was undertaken. Dominance of the crystallization process originating from mechanically induced strains and heterogeneities was confirmed. Substitution of Se by Te was found to enhance the manifestation of the bulk crystallization mechanisms (at the expense of surface crystallization). The XRD analysis showed significant dependence of the crystalline structural parameters on the crystallization conditions (initial particle size of the glassy grains and applied heating rate). Based on this information, a new microstructural crystallization mechanism, indistinguishable by DSC, was proposed.« less

Multiband nodeless superconductivity near the charge-density-wave quantum critical point in ZrTe3-x Se x

NASA Astrophysics Data System (ADS)

Shan, Cui; Lan-Po, He; Xiao-Chen, Hong; Xiang-De, Zhu; Cedomir, Petrovic; Shi-Yan, Li

2016-07-01

It was found that selenium doping can suppress the charge-density-wave (CDW) order and induce bulk superconductivity in ZrTe3. The observed superconducting dome suggests the existence of a CDW quantum critical point (QCP) in ZrTe3-x Se x near x ≈ 0.04. To elucidate the superconducting state near the CDW QCP, we measure the thermal conductivity of two ZrTe3-x Se x single crystals (x = 0.044 and 0.051) down to 80 mK. For both samples, the residual linear term κ 0/T at zero field is negligible, which is a clear evidence for nodeless superconducting gap. Furthermore, the field dependence of κ 0/T manifests a multigap behavior. These results demonstrate multiple nodeless superconducting gaps in ZrTe3-x Se x , which indicates conventional superconductivity despite of the existence of a CDW QCP. Project supported by the National Basic Research Program of China (Grant Nos. 2012CB821402 and 2015CB921401), the National Natural Science Foundation of China (Grant Nos. 91421101, 11422429, and 11204312), the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China, and STCSM of China (Grant No. 15XD1500200). Work at Brookhaven National Laboratory was supported by the US DOE under Contract No. DESC00112704.

Vapour phase growth and characterization of II-VI mixed crystals

NASA Astrophysics Data System (ADS)

Reddy, D. R.; Reddy, B. K.

1992-02-01

All II-VI semiconductors with melting temperatures well above 1000 degree(s)C and with appreciable congruent vaporization well below their melting temperatures leave little scope for any growth technique except for the slow but efficient vaporphase growth method. Theoretical flaw in diffusion models of vapor phase growth was corrected by Factor and Garrett by incorporating the flow velocity term which otherwise would lead to segregation of constituents. An additional degree of freedom arising from the presence of two components was well utilized to finely control the stoichiometry in binaries. In mixed II-VI systems the components are either three or four, depending on whether the system is a ternary or a quaternary. The added degrees of freedom make it very difficult to control stoichiometry. However, Igaki et al. demonstrated the feasibility of control of stoichiometry in CdSxSe1-x. In this paper, a self-sealing vaporphase growth technique used for both ternary and quaternary system is described. The systems studied are CdSxSe1-x, (ZnSe)x(CdTe)1-x and (ZnTe)x(CdSe)1-x. Results on growth mechanism, miscibility, structure, band gap variation, conductivity type variation with 'x' and transport properties are presented in a comparative way and discussed. CdSxSe1-x system in the entire 'X' has the same crystal structure and type of conductivity. The second system has the same zincblend structure but the type of conductivity is very sensitive to thermal treatment. In the last system both structure and types of conductivity are different. The discontinuities in properties associated with this divergent end compound are presented and discussed. Among the physical properties/parameters studied crystal structure, bandgap and nature of conductivity are tailorable, and magnitudes of conductivity and dielectric properties are very difficult to control in the crystals grown by this vapor phase method.

MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuznetzov, P. I., E-mail: pik218@ire216.msk.su; Averin, S. V., E-mail: sva278@ire216.msk.su; Zhitov, V. A.

2017-02-15

On the basis of a type-II ZnSe/ZnTe superlattice, a MSM (metal—semiconductor–metal) photodetector is fabricated and investigated. The detector features low dark currents and a high sensitivity. The spectral characteristic of the detector provides the possibility of the selective detection of three separate spectral portions of visible and near-infrared radiation.

Optic phonon bandwidth and lattice thermal conductivity: The case of L i2X (X =O , S, Se, Te)

NASA Astrophysics Data System (ADS)

Mukhopadhyay, S.; Lindsay, L.; Parker, D. S.

2016-06-01

We examine the lattice thermal conductivities (κl) of L i2X (X =O ,S ,Se ,Te ) using a first-principles Peierls-Boltzmann transport methodology. We find low κl values ranging between 12 and 30 W m-1K-1 despite light Li atoms, a large mass difference between constituent atoms, and tightly bunched acoustic branches, all features that give high κl in other materials including BeSe (630 W m-1K-1 ), BeTe (370 W m-1K-1 ), and cubic BAs (3170 W m-1K-1 ). Together these results suggest a missing ingredient in the basic guidelines commonly used to understand and predict κl. Unlike typical simple systems (e.g., Si, GaAs, SiC), the dominant resistance to heat-carrying acoustic phonons in L i2Se and L i2Te comes from interactions of these modes with two optic phonons. These interactions require significant bandwidth and dispersion of the optic branches, both present in L i2X materials. These considerations are important for the discovery and design of new materials for thermal management applications and give a more comprehensive understanding of thermal transport in crystalline solids.

Superconductivity and charge density wave in ZrTe 3–xSe x

DOE PAGES

Zhu, Xiangde; Ning, Wei; Li, Lijun; ...

2016-06-02

Charge density wave (CDW), the periodic modulation of the electronic charge density, will open a gap on the Fermi surface that commonly leads to decreased or vanishing conductivity. On the other hand superconductivity, a commonly believed competing order, features a Fermi surface gap that results in infinite conductivity. Here we report that superconductivity emerges upon Se doping in CDW conductor ZrTe 3 when the long range CDW order is gradually suppressed. Superconducting critical temperature T c(x) in ZrTe 3–xSe x (0 ≤ x ≤ 0.1) increases up to 4 K plateau for 0.04 ≤ x ≤ 0.07. Further increase inmore » Se content results in diminishing T c and filametary superconductivity. The CDW modes from Raman spectra are observed in x = 0.04 and 0.1 crystals, where signature of ZrTe 3 CDW order in resistivity vanishes. As a result, the electronic-scattering for high T c crystals is dominated by local CDW fluctuations at high temperatures, the resistivity is linear up to highest measured T = 300 K and contributes to substantial in-plane anisotropy.« less

Intrinsic pinning and the critical current scaling of clean epitaxial Fe(Se,Te) thin films

NASA Astrophysics Data System (ADS)

Iida, Kazumasa; Hänisch, Jens; Reich, Elke; Kurth, Fritz; Hühne, Ruben; Schultz, Ludwig; Holzapfel, Bernhard; Ichinose, Ataru; Hanawa, Masafumi; Tsukada, Ichiro; Schulze, Michael; Aswartham, Saicharan; Wurmehl, Sabine; Büchner, Bernd

2013-03-01

We report on the transport properties of clean, epitaxial Fe(Se,Te) thin films prepared on Fe-buffered MgO (001) single crystalline substrates by pulsed laser deposition. Near Tc a steep slope of the upper critical field for H||ab was observed (74.1 T/K), leading to a very short out-of-plane coherence length, ξc(0), of 0.2 nm, yielding 2ξc(0)≈0.4nm. This value is shorter than the interlayer distance (0.605 nm) between the Fe-Se(Te) planes, indicative of modulation of the superconducting order parameter along the c axis. An inverse correlation between the power law exponent N of the electric field-current density(E-J) curve and the critical current density Jc has been observed at 4 K, when the orientation of H was close to the ab plane. These results prove the presence of intrinsic pinning in Fe(Se,Te). A successful scaling of the angular dependent Jc and the corresponding exponent N can be realized by the anisotropic Ginzburg Landau approach with appropriate Γ values 2˜3.5. The temperature dependence of Γ behaves almost identically to that of the penetration depth anisotropy.

Influence of carrier concentration on the performance of CIAS solar cell

NASA Astrophysics Data System (ADS)

Patel, Kinjal; Ray, Jaymin

2018-05-01

Photovoltaic research has moved beyond the use of single crystalline materials such as Group IV elemental Si and Group III-V compounds like GaAs to much more complex compounds of the Group I-III-VI2 with chalcopyrite structure. The ternary ABC2 chalcopyrites (A=Cu; B=In, Ga or Al; C= S, Se or Te) form a large group of semiconducting materials with diverse structural and electrical properties. These materials are attractive for thin film photovoltaic application for a number of reasons. The bandgap of CuInSe2 is relatively low, 1.04 eV, but it can be adjusted to better match the solar spectrum either by substituting part of In by Ga or part of Se by S. Most reported and popular Cu(In,Ga)Se2 (CIGS) is one of its derivative. Efficiency of the CIGS devices with Eg >1.3 eV is reduced by the degradation of the electronic properties of the absorber leading to losses in the fill-factor and the open-circuit voltage. Alternatively, the performance can be improved by the addition of Al to form CuInAlSe2 (CIAS) absorber layers with an increase in the bandgap energy, which matches closely with the solar spectrum. In the present work an effort was made in the direction of improving the conversion efficiency by studying the influence of carrier concentration. SCAPS simulation program is used to simulate the CIAS structure numerically. The obtained results intended the significant variation in the values of conversion efficiency. Variation in the efficiency can be considered because of the relation optical absorption and carrier concentration. Observed highest efficiency is 10 %, which can be further improved by considering actual parameters of the device as well as the operating condition.

Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-05-01

Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

Partial Pressures of Te2 and Thermodynamic Properties of Ga-Te System

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

2001-01-01

The partial pressures of Te2 in equilibrium with Ga(1-x)Te(x) samples were measured by optical absorption technique from 450 to 1100 C for compositions, x, between 0.333 and 0.612. To establish the relationship between the partial pressure of Te, and the measured optical absorbance, the calibration runs of a pure Te sample were also conducted to determine the Beer's Law constants. The partial pressures of Te2 in equilibrium with the GaTe(s) and Ga2Te3(s)compounds, or the so-called three-phase curves, were established. These partial pressure data imply the existence of the Ga3Te4(s) compound. From the partial pressures of Te2 over the Ga-Te melts, partial molar enthalpy and entropy of mixing for Te were derived and they agree reasonable well with the published data. The activities of Te in the Ga-Te melts were also derived from the measured partial pressures of Te2. These data agree well with most of the previous results. The possible reason for the high activity of Te measured for x less than 0.60 is discussed.

Characterization of HgCdTe and Related Materials For Third Generation Infrared Detectors

NASA Astrophysics Data System (ADS)

Vaghayenegar, Majid

Hg1-xCdxTe (MCT) has historically been the primary material used for infrared detectors. Recently, alternative substrates for MCT growth such as Si, as well as alternative infrared materials such as Hg1-xCdxSe, have been explored. This dissertation involves characterization of Hg-based infrared materials for third generation infrared detectors using a wide range of transmission electron microscopy (TEM) techniques. A microstructural study on HgCdTe/CdTe heterostructures grown by MBE on Si (211) substrates showed a thin ZnTe layer grown between CdTe and Si to mediate the large lattice mismatch of 19.5%. Observations showed large dislocation densities at the CdTe/ZnTe/Si (211) interfaces, which dropped off rapidly away from the interface. Growth of a thin HgTe buffer layer between HgCdTe and CdTe layers seemed to improve the HgCdTe layer quality by blocking some defects. A second study investigated the correlation of etch pits and dislocations in as-grown and thermal-cycle-annealed (TCA) HgCdTe (211) films. For as-grown samples, pits with triangular and fish-eye shapes were associated with Frank partial and perfect dislocations, respectively. Skew pits were determined to have a more complex nature. TCA reduced the etch-pit density by 72%. Although TCA processing eliminated the fish-eye pits, dislocations reappeared in shorter segments in the TCA samples. Large pits were observed in both as-grown and TCA samples, but the nature of any defects associated with these pits in the as-grown samples is unclear. Microstructural studies of HgCdSe revealed large dislocation density at ZnTe/Si(211) interfaces, which dropped off markedly with ZnTe thickness. Atomic-resolution STEM images showed that the large lattice mismatch at the ZnTe/Si interface was accommodated through {111}-type stacking faults. A detailed analysis showed that the stacking faults were inclined at angles of 19.5 and 90 degrees at both ZnTe/Si and HgCdSe/ZnTe interfaces. These stacking faults were associated with Shockley and Frank partial dislocations, respectively. Initial attempts to delineate individual dislocations by chemical etching revealed that while the etchants successfully attacked defective areas, many defects in close proximity to the pits were unaffected.

Electronic structures of Plutonium compounds with the NaCl-type monochalcogenides structure

NASA Astrophysics Data System (ADS)

Maehira, Takahiro; Tatetsu, Yasutomi

2012-12-01

We calculate the energy band structure and the Fermi surface of PuS, PuSe and PuTe by using a self-consistent relativistic linear augmented-plane-wave method with the exchange and correlation potential in a local density approximation. It is found in common that the energy bands in the vicinity of the Fermi level are mainly due to the hybridization between Pu 5/ and monochalcogenide p electrons. The obtained main Fermi surfaces are composed of two hole sheets and one electron sheet, all of which are constructed from the band having the Pu 5/ state and the monochalcogenide p state.

Luminescence properties of ZnxMg1-xSe layers

NASA Astrophysics Data System (ADS)

Bala, Waclaw; Firszt, Franciszek; Dzik, Janusz; Gapinski, Adam; Glowacki, Grzegorz

1995-10-01

This work deals with the study of luminescence properties of ZnxMg1-xSe layers prepared by different methods. ZnxMg1-xSe mixed crystal layers were obtained by: (a) thermal diffusion of Mg metal in the temperature range 1050 K - 1200 K into ZnSe single crystal grown by Bridgman method, and (b) epitaxial growth on (001) GaAs and (111) ZnTe substrates by MBE using elemental Zn, Se and Mg sources. The luminescence spectra of ZnxMg1-xSe layers grown on (001) GaAs and (111) ZnTe substrates are dominated by narrow blue and violet emission bands with maxima positioned at about 3.05 - 3.28 eV, 2.88 - 3.04 eV, and 2.81 - 2.705 eV.

Effect of thermal annealing on structure and optical band gap of amorphous Se{sub 72}Te{sub 25}Sb{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dwivedi, D. K., E-mail: dwivedidkphys@rediffmail.com; Pathak, H. P., E-mail: dwivedidkphys@rediffmail.com; Shukla, Nitesh

2014-04-24

Thin films of a−Se{sub 72}Te{sub 25}Sb{sub 3} were prepared by vacuum evaporation technique in a base pressure of 10{sup −6} Torr on to well cleaned glass substrate. a−Se{sub 72}Te{sub 25}Sb{sub 3} thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical band gap of as prepared and annealed films as a function of photon energy in the wavelength range 400–1100 nm has been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.

Composition of the earth's upper mantle. II - Volatile trace elements in ultramafic xenoliths

NASA Technical Reports Server (NTRS)

Morgan, J. W.; Wandless, G. A.; Petrie, R. K.; Irving, A. J.

1980-01-01

Radiochemical neutron activation analysis was used to determine the nine volatile elements Ag, Bi, Cd, In, Sb, Se, Te, Tl, and Zn in 19 ultramafic rocks, consisting mainly of spinel and garnet lherzolites. A sheared garnet lherzolite, PHN 1611, may approximate undepleted mantle material and tends to have a higher volatile element content than the depleted mantle material represented by spinel lherzolites. Comparisons of continental basalts with PHN 1611 and of oceanic ridge basalts with spinel lherzolites show similar basalt: source material partition factors for eight of the nine volatile elements, Sb being the exception. The strong depletion of Te and Se in the mantle, relative to lithophile elements of similar volatility, suggests that 97% of the earth's S, Se and Te may be in the outer core.

Accurate Nanoscale Crystallography in Real-Space Using Scanning Transmission Electron Microscopy.

PubMed

Dycus, J Houston; Harris, Joshua S; Sang, Xiahan; Fancher, Chris M; Findlay, Scott D; Oni, Adedapo A; Chan, Tsung-Ta E; Koch, Carl C; Jones, Jacob L; Allen, Leslie J; Irving, Douglas L; LeBeau, James M

2015-08-01

Here, we report reproducible and accurate measurement of crystallographic parameters using scanning transmission electron microscopy. This is made possible by removing drift and residual scan distortion. We demonstrate real-space lattice parameter measurements with <0.1% error for complex-layered chalcogenides Bi2Te3, Bi2Se3, and a Bi2Te2.7Se0.3 nanostructured alloy. Pairing the technique with atomic resolution spectroscopy, we connect local structure with chemistry and bonding. Combining these results with density functional theory, we show that the incorporation of Se into Bi2Te3 causes charge redistribution that anomalously increases the van der Waals gap between building blocks of the layered structure. The results show that atomic resolution imaging with electrons can accurately and robustly quantify crystallography at the nanoscale.

Reversible amorphous-crystalline phase changes in a wide range of Se1-xTex alloys studied using ultrafast differential scanning calorimetry

NASA Astrophysics Data System (ADS)

Vermeulen, Paul. A.; Momand, Jamo; Kooi, Bart J.

2014-07-01

The reversible amorphous-crystalline phase change in a chalcogenide material, specifically the Se1-xTex alloy, has been investigated for the first time using ultrafast differential scanning calorimetry. Heating rates and cooling rates up to 5000 K/s were used. Repeated reversible amorphous-crystalline phase switching was achieved by consecutively melting, melt-quenching, and recrystallizing upon heating. Using a well-conditioned method, the composition of a single sample was allowed to shift slowly from 15 at. %Te to 60 at. %Te, eliminating sample-to-sample variability from the measurements. Using Energy Dispersive X-ray Spectroscopy composition analysis, the onset of melting for different Te-concentrations was confirmed to coincide with the literature solidus line, validating the use of the onset of melting Tm as a composition indicator. The glass transition Tg and crystallization temperature Tc could be determined accurately, allowing the construction of extended phase diagrams. It was found that Tm and Tg increase (but Tg/Tm decrease slightly) with increasing Te-concentration. Contrarily, the Tc decreases substantially, indicating that the amorphous phase becomes progressively unfavorable. This coincides well with the observation that the critical quench rate to prevent crystallization increases about three orders of magnitude with increasing Te concentration. Due to the employment of a large range of heating rates, non-Arrhenius behavior was detected, indicating that the undercooled liquid SeTe is a fragile liquid. The activation energy of crystallization was found to increase 0.5-0.6 eV when the Te concentration increases from 15 to 30 at. % Te, but it ceases to increase when approaching 50 at. % Te.

Preparation and structure of BiCrTeO{sub 6}: A new compound in Bi–Cr–Te–O system. Thermal expansion studies of Cr{sub 2}TeO{sub 6}, Bi{sub 2}TeO{sub 6} and BiCrTeO{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vats, Bal Govind; Phatak, Rohan; Krishnan, K.

Graphical abstract: A new compound BiCrTeO{sub 6} in the Bi–Cr–Te–O system was prepared by solid state route and characterized by X-ray diffraction method. The crystal structure of BiCrTeO{sub 6} shows that there is one distinct site for bismuth (Bi) atom (pink color), one chromium rich (Cr/Te = 68/32) (blue/green color), one tellurium rich (Te/Cr = 68/32) sites (green/blue color), and one distinct site for oxygen (O) atom (red color) in the unit cell. All cations in this structure show an octahedral coordination with oxygen atoms at the corners. The thermogram (TG) of the compound in air shows that it ismore » stable up to 1103 K and decomposes thereafter. The thermal expansion behaviour of BiCrTeO{sub 6} was studied using high temperature X-ray diffraction method from room temperature to 923 K under vacuum of 10{sup −8} atmosphere and showed positive thermal expansion with the average volume thermal expansion coefficients of 16.0 × 10{sup −6}/K. - Highlights: • A new compound BiCrTeO{sub 6} in Bi–Cr–Te–O system was prepared and characterized. • The crystal structure of BiCrTeO{sub 6} was determined by Rietveld refinement method. • The structure of BiCrTeO{sub 6} shows an octahedral coordination for all the metal ions. • The thermal expansion behavior of BiCrTeO{sub 6} from room temperature to 923 K showed a positive thermal expansion. • The average volume thermal expansion coefficient for BiCrTeO{sub 6} is 16.0 × 10{sup −6}/K. - Abstract: A new compound BiCrTeO{sub 6} in Bi–Cr–Te–O system was prepared by solid state reaction of Bi{sub 2}O{sub 3}, Cr{sub 2}O{sub 3} and H{sub 6}TeO{sub 6} in oxygen and characterized by X-ray diffraction (XRD) method. It could be indexed on a trigonal lattice, with the space group P-31c, unit cell parameters a = 5.16268(7) Å and c = 9.91861(17) Å. The crystal structure of BiCrTeO{sub 6} was determined by Rietveld refinement method using the powder XRD data. Structure shows that there is one distinct site for bismuth (Bi) atom, one chromium rich (Cr/Te = 68/32), and one tellurium rich (Te/Cr = 68/32) sites, and one distinct site for oxygen (O) atom in the unit cell. All cations in this structure show an octahedral coordination with oxygen atoms at the corners. The thermogravimetric analysis (TGA) of the compound in air shows that it is stable up to 1103 K and decomposes thereafter. The thermal expansion behavior of Cr{sub 2}TeO{sub 6}, Bi{sub 2}TeO{sub 6} and BiCrTeO{sub 6} was studied using High Temperature X-ray diffraction (HTXRD) method from room temperature to 973, 873 and 923 K respectively under vacuum of 10{sup −8} atmospheres. All the compounds showed positive thermal expansion with the average volume thermal expansion coefficients of 14.38 × 10{sup −6}/K, 22.0 × 10{sup −6}/K and 16.0 × 10{sup −6}/K respectively.« less

Electronic transport properties of intermediately coupled superconductors: PdTe2 and Cu0.04PdTe2

NASA Astrophysics Data System (ADS)

Hooda, M. K.; Yadav, C. S.

2018-01-01

We have investigated the electrical resistivity (1.8-480 K), Seebeck coefficient (2.5-300 K) and thermal conductivity (2.5-300 K) of PdTe2 and 4% Cu intercalated PdTe2 compounds. The electrical resistivity for the compounds shows a Bloch-Gruneisen-type linear temperature (T) dependence for 100 \\text{K}, and Fermi liquid behavior (ρ (T) \\propto T2) for T<50 \\text{K} . Seebeck coefficient data exhibit a strong competition between Normal (N) and Umklapp (U) scattering processes at low T. The low-T, thermal conductivity (κ) of the compounds is strongly dominated by the electronic contribution, and exhibits a rare linear T-dependence below 10 K. However, high-T, κ (T) shows the usual 1/T -dependence, dominated by the U-scattering process. The electron-phonon coupling parameters, estimated from the low-T, specific-heat data and first-principle electronic structure calculations suggest that PdTe2 and Cu0.04PdTe2 are intermediately coupled superconductors.

A Monte Carlo study of primary electron production inside photoconductors for digital mammography and indications of material suitability

NASA Astrophysics Data System (ADS)

Sakellaris, T.; Spyrou, G.; Panayiotakis, G.; Tzanakos, G.

2010-08-01

Materials like a-Se, a-As2Se3, GaSe, GaAs, Ge, CdTe, CdZnTe, Cd0.8Zn0.2Te, ZnTe, PbO, TlBr, PbI2 and HgI2 are possible photoconductors for direct conversion digital mammography detectors. The physical characteristics of primary electrons, such as their number, energies, direction angles and spatial distributions, strongly affect the characteristics of the final signal and hence image quality. In previous work, a Monte Carlo model has been developed that simulates the generation of primary electrons inside these materials for x-ray spectra in the mammographic energy range. Using this model the energy, angular and spatial distributions of primary electrons have been studied. For the case of CdTe, CdZnTe, Cd0.8Zn0.2Te and ZnTe, an investigation was also made concerning the dependence of the primary electron production on the incident x-ray energy. In this paper, this investigation has been extended to include the rest of the photoconducting materials. The investigation is realized studying the number of primary electrons produced along with the escaping of photons (both incident and fluorescent) and the number of fluorescent photons emitted for 39 monoenergetic x-ray spectra with energies between 2 and 40 keV. The information obtained from the overall investigation of the primary signal in the various photoconductors gives some good indications of the suitability of PbI2 and HgI2.

Electronic structure and superconductivity of FeSe-related superconductors.

PubMed

Liu, Xu; Zhao, Lin; He, Shaolong; He, Junfeng; Liu, Defa; Mou, Daixiang; Shen, Bing; Hu, Yong; Huang, Jianwei; Zhou, X J

2015-05-13

FeSe superconductors and their related systems have attracted much attention in the study of iron-based superconductors owing to their simple crystal structure and peculiar electronic and physical properties. The bulk FeSe superconductor has a superconducting transition temperature (Tc) of ~8 K and it can be dramatically enhanced to 37 K at high pressure. On the other hand, its cousin system, FeTe, possesses a unique antiferromagnetic ground state but is non-superconducting. Substitution of Se with Te in the FeSe superconductor results in an enhancement of Tc up to 14.5 K and superconductivity can persist over a large composition range in the Fe(Se,Te) system. Intercalation of the FeSe superconductor leads to the discovery of the AxFe2-ySe2 (A = K, Cs and Tl) system that exhibits a Tc higher than 30 K and a unique electronic structure of the superconducting phase. A recent report of possible high temperature superconductivity in single-layer FeSe/SrTiO3 films with a Tc above 65 K has generated much excitement in the community. This pioneering work opens a door for interface superconductivity to explore for high Tc superconductors. The distinct electronic structure and superconducting gap, layer-dependent behavior and insulator-superconductor transition of the FeSe/SrTiO3 films provide critical information in understanding the superconductivity mechanism of iron-based superconductors. In this paper, we present a brief review of the investigation of the electronic structure and superconductivity of the FeSe superconductor and related systems, with a particular focus on the FeSe films.

Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4.

PubMed

Zhang, Dan; Yang, Junyou; Jiang, Qinghui; Zhou, Zhiwei; Li, Xin; Xin, Jiwu; Basit, Abdul; Ren, Yangyang; He, Xu; Chu, Weijing; Hou, Jingdi

2017-08-30

The effect of Al-, Ga-, and In-doping on the thermoelectric (TE) properties of Cu 3 SbSe 4 has been comparatively studied on the basis of theoretical prediction and experimental validation. It is found that tiny Al/Ga/In substitution leads to a great enhancement of electrical conductivity with high carrier concentration and also large Seebeck coefficient due to the preserved high band degeneracy and thereby a remarkably high power factor. Ultimately, coupled with the depressed lattice thermal conductivity, all three elements (Al/Ga/In) substituted samples have obtained a highly improved thermoelectric performance with respect to undoped Cu 3 SbSe 4 . Compared to the samples at the same Al/In doping level, the slightly Ga-doped sample presents better TE performance over the wide temperature range, and the Cu 3 Sb 0.995 Ga 0.005 Se 4 sample presents a record high ZT value of 0.9 among single-doped Cu 3 SbSe 4 at 623 K, which is about 80% higher than that of pristine Cu 3 SbSe 4 . This work offers an alternative approach to boost the TE properties of Cu 3 SbSe 4 by selecting efficient dopant to weaken the coupling between electrical conductivity and Seebeck coefficient.

Synthesis and X-ray structures of dilithium complexes of the phosphonate anions [PhP(E)(N(t)Bu)(2)](2-) (E = O, S, Se, Te) and dimethylaluminum derivatives of [PhP(E)(N(t)Bu)(NH(t)Bu)](-) (E = S, Se).

PubMed

Briand, Glen G; Chivers, Tristram; Krahn, Mark; Parvez, Masood

2002-12-16

The dilithium salts of the phosphonate dianions [PhP(E)(N(t)Bu)(2)](2-) (E = O, S, Se) are generated by the lithiation of [PhP(E)(NH(t)Bu)(2)] with n-butyllithium. The formation of the corresponding telluride (E = Te) is achieved by oxidation of [Li(2)[PhP(N(t)Bu)(2)

Inhomogeneities and superconductivity in poly-phase Fe-Se-Te systems

NASA Astrophysics Data System (ADS)

Hartwig, S.; Schäfer, N.; Schulze, M.; Landsgesell, S.; Abou-Ras, D.; Blum, Ch. G. F.; Wurmehl, S.; Sokolowski, A.; Büchner, B.; Prokeš, K.

2018-02-01

The impact of synthesis conditions, post-preparation heating procedure, aging and influence of pressure on the superconducting properties of FeSe0.4Te0.6 crystals is reported. Two FeSe0.4Te0.6 single crystals were used in the study, prepared from stoichiometric melt but cooled down with very different cooling rates, and investigated using magnetic bulk and electrical-resistivity methods. The fast-cooled crystal contains large inclusions of Fe3Se2.1Te1.8 and exhibits bulk superconductivity in its as-prepared state, while the other is homogeneous and shows only traces of superconductivity. AC susceptibility measurements under hydrostatic pressure show that the superconducting transition temperature of the inhomogeneous crystal increases from 12.3 K at ambient pressure to Tsc = 17.9 K at 9 kbar. On the other hand, neither pressure nor mechanically-induced stress is sufficient to induce superconductivity in the homogeneous crystal. However, an additional heat treatment at 673 K followed by fast cooling down and/or long-term aging at ambient conditions leads to the appearance of bulk superconductivity also in the latter sample. This sample remains homogeneous on a scale down to few μm but shows an additional magnetic phase transition around 130 K suggesting that it must be inhomogeneous. For comparison also Fe3Se2.1Te1.8 polycrystals have been prepared and their magnetic properties have been studied. It appears that this phase is not superconducting by itself. It is concluded that nano-scale inhomogeneities that appear in the FeSexTe1-x system due to a spinodal decomposition in the solid state are necessary for bulk superconductivity, possibly due to minor changes in the crystal structure and microstructure. Macroscopic inclusions quenched by fast cooling from high temperatures lead obviously to strain and hence variations in the lattice constants, an effect that is further supported by application of pressure/stress.

X2Y2 isomers: tuning structure and relative stability through electronegativity differences (X = H, Li, Na, F, Cl, Br, I; Y = O, S, Se, Te).

PubMed

El-Hamdi, Majid; Poater, Jordi; Bickelhaupt, F Matthias; Solà, Miquel

2013-03-04

We have studied the XYYX and X2YY isomers of the X2Y2 species (X = H, Li, Na, F, Cl, Br, I; Y = O, S, Se, Te) using density functional theory at the ZORA-BP86/QZ4P level. Our computations show that, over the entire range of our model systems, the XYYX isomers are more stable than the X2YY forms except for X = F and Y = S and Te, for which the F2SS and F2TeTe isomers are slightly more stable. Our results also point out that the Y-Y bond length can be tuned quite generally through the X-Y electronegativity difference. The mechanism behind this electronic tuning is the population or depopulation of the π* in the YY fragment.

Thermodynamic Re-modeling of the Sb-Te System Using Associate and Ionic Models

NASA Astrophysics Data System (ADS)

Guo, Cuiping; Li, Changrong; Du, Zhenmin

2014-11-01

The Sb-Te system is re-modeled using the calculation of phase diagram (CALPHAD) technique. The liquid phase is modeled as (Sb, Sb2Te3, Te) using the associate model and as (Sb3+) p (Te2-,Te,Va) q using the ionic model. The solution phases rhom(Sb) and hex(Te) are described as substitutional solutions. Two compounds, delta and gamma, are treated as (Sb)0.4(Sb,Te)0.6 according to their homogeneity ranges, while the compound Sb2Te3 follows a strict stoichiometry. A set of self-consistent thermodynamic parameters is obtained. Using these thermodynamic parameters, the experimental Sb-Te phase diagram, mixing enthalpies of liquid at 911 K and 935 K, activities of Sb and Te in liquid at 911 K and 1023 K, and Gibbs energy of liquid at 911 K, is well reproduced by the calculations. And the calculated enthalpy of formation, enthalpy of fusion, and heat capacity of Sb2Te3 are also in fairly good agreement with all the available experimental data.

First principles study of structural, optoelectronic and thermoelectric properties of Cu{sub 2}CdSnX{sub 4} (X = S, Se, Te) chalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hussain, Sajjad; Murtaza, G., E-mail: murtaza@icp.edu.pk; Haidar Khan, Shah

2016-07-15

Highlights: • Copper based quaternary chalcogenides are important for optoelectronic devices. • The WC-GGA shows that the materials are metallic in nature. • The EV-GGA predicts better band gaps compared to WC-GGA. • Absorption peaks are high in the visible and ultraviolet energy regions. • All the semiconductors have figure of merit above 0.70. - Abstract: In this work, structural, electronic, optical and thermoelectric properties of Cu{sub 2}CdSnX{sub 4} (X = S, Se, Te) have been studied through the full potential linearized augmented plane wave method. Calculated ground state lattice parameters are in good agreement with the experimental results. Latticemore » constant and bulk moduli vary inversely by replacing the anion X from S to Te in Cu{sub 2}CdSnX{sub 4}. The WC-GGA shows that the materials are metallic in nature. The EV-GGA predicts better band gaps compared to WC-GGA. The calculated bandgap values are 1.8, 1.06 and 0.8042 for Cu{sub 2}CdSnX{sub 4}, Cu{sub 2}CdSnX{sub 4}, Cu{sub 2}CdSnX{sub 4} respectively. Cd-d, Sn-s and X-p states contribute significantly in the density of states of the compounds. Absorption peaks and optical conductivity is high in the visible and ultraviolet energy regions. All the semiconductors have figure of merit above 0.70. The optical and thermoelectric properties clearly show that Cu{sub 2}CdSnX{sub 4} are potential candidates in the fields of solar cell and thermoelectric technology.« less

Electronic and Thermoelectric Properties of SnSe1-x S x (x = 0, 0.25, 0.5, 0.75, and 1) Alloys: First-Principles Calculations

NASA Astrophysics Data System (ADS)

Hamad, Bothina

2018-04-01

Ab initio investigations of the electronic and thermoelectric (TE) properties of SnSe1-x S x (x = 0, 0.25, 0.5, 0.75, and 1) alloys are performed using density functional theory. The TE properties are calculated using the semi-classical Boltzmann transport theory within the constant relaxation time approximation. Band gap values are found to range between 0.94 eV and 1.02 eV in agreement with the experimental findings and previous calculations. All alloys tend to exhibit p-type TE properties, indicated by a sharp peak near the Fermi level that indicates a heavy carrier concentration. Electrical conductivity is found to decrease, whereas the Seebeck coefficient and the power factor increase for higher concentrations. The three alloys, SnS, SnSe and SnSe0.75S0.25 alloys exhibit the same power factor of 3.5 × 10-3 W/m K2, which is promising for thermoelectric applications.

Observation of universal strong orbital-dependent correlation effects in iron chalcogenides

DOE PAGES

Yi, M.; Liu, Z. -K.; Zhang, Y.; ...

2015-07-23

Establishing the appropriate theoretical framework for unconventional superconductivity in the iron-based materials requires correct understanding of both the electron correlation strength and the role of Fermi surfaces. This fundamental issue becomes especially relevant with the discovery of the iron chalcogenide superconductors. Here, we use angle-resolved photoemission spectroscopy to measure three representative iron chalcogenides, FeTe 0.56Se 0.44, monolayer FeSe grown on SrTiO 3 and K 0.76Fe 1.72Se 2. We show that these superconductors are all strongly correlated, with an orbital-selective strong renormalization in the dxy bands despite having drastically different Fermi surface topologies. Furthermore, raising temperature brings all three compounds frommore » a metallic state to a phase where the dxy orbital loses all spectral weight while other orbitals remain itinerant. As a result, these observations establish that iron chalcogenides display universal orbital-selective strong correlations that are insensitive to the Fermi surface topology, and are close to an orbital-selective Mott phase, hence placing strong constraints for theoretical understanding of iron-based superconductors.« less

Observation of universal strong orbital-dependent correlation effects in iron chalcogenides

PubMed Central

Yi, M.; Liu, Z-K; Zhang, Y.; Yu, R.; Zhu, J.-X.; Lee, J.J.; Moore, R.G.; Schmitt, F.T.; Li, W.; Riggs, S.C.; Chu, J.-H.; Lv, B.; Hu, J.; Hashimoto, M.; Mo, S.-K.; Hussain, Z.; Mao, Z.Q.; Chu, C.W.; Fisher, I.R.; Si, Q.; Shen, Z.-X.; Lu, D.H.

2015-01-01

Establishing the appropriate theoretical framework for unconventional superconductivity in the iron-based materials requires correct understanding of both the electron correlation strength and the role of Fermi surfaces. This fundamental issue becomes especially relevant with the discovery of the iron chalcogenide superconductors. Here, we use angle-resolved photoemission spectroscopy to measure three representative iron chalcogenides, FeTe0.56Se0.44, monolayer FeSe grown on SrTiO3 and K0.76Fe1.72Se2. We show that these superconductors are all strongly correlated, with an orbital-selective strong renormalization in the dxy bands despite having drastically different Fermi surface topologies. Furthermore, raising temperature brings all three compounds from a metallic state to a phase where the dxy orbital loses all spectral weight while other orbitals remain itinerant. These observations establish that iron chalcogenides display universal orbital-selective strong correlations that are insensitive to the Fermi surface topology, and are close to an orbital-selective Mott phase, hence placing strong constraints for theoretical understanding of iron-based superconductors. PMID:26204461

Novel Approach to Front Contact Passivation for CdTe Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kephart, Jason M.

2018-02-18

The goal of this project was to study the use of sputter-deposited oxide materials for interface passivation of CdTe-based photovoltaics. Several candidate materials were chosen based on their promise in passivating the CdTe and CdSeTe semiconductor interface, chemical and thermal stability to device processing, and ability to be deposited by sputter deposition.

Assessment of band gaps for alkaline-earth chalcogenides using improved Tran Blaha-modified Becke Johnson potential

NASA Astrophysics Data System (ADS)

Yedukondalu, N.; Kunduru, Lavanya; Roshan, S. C. Rakesh; Sainath, M.

2018-04-01

Assessment of band gaps for nine alkaline-earth chalcogenides namely MX (M = Ca, Sr, Ba and X = S, Se Te) compounds are reported using Tran Blaha-modified Becke Johnson (TB-mBJ) potential and its new parameterization. From the computed electronic band structures at the equilibrium lattice constants, these materials are found to be indirect band gap semiconductors at ambient conditions. The calculated band gaps are improved using TB-mBJ and its new parameterization when compared to local density approximation (LDA) and Becke Johnson potentials. We also observe that TB-mBJ new parameterization for semiconductors below 7 eV reproduces the experimental trends very well for the small band gap semiconducting alkaline-earth chalcogenides. The calculated band profiles look similar for MX compounds (electronic band structures are provided for BaS for representation purpose) using LDA and new parameterization of TB-mBJ potentials.

Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

NASA Astrophysics Data System (ADS)

Fang, Fang

2011-12-01

Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a combination of core levels and valence band ultraviolet photoemission spectra of the bulk materials as well as the heterojunction (Sb2Te 3/Bi2Te3), the VBO at p-type Sb2Te 3 and n-type Bi2Te3 is determined as 0.04 +/- 0.10 eV. Such a small energy offset is within the same magnitude of the thermal energy of kT, at room temperature. The motivation for the II-VI ZnTe-based thin film solar cell derives from the need to identify and overcome performance-limiting properties related to the processing of film deposition using close space sublimation (CSS). Chemical and electronic properties of the CSS grown ZnTe/ZnSe films were studied in x-ray diffraction, scanning electron microscopy and photoemission spectroscopy. Specifically, Se oxide was observed on the ZnSe surface, the removal of this oxide generated apparent offsets in the valence band and hence the alignment at the heterojunction energy diagram. Processing steps to mitigate oxidation yielded the best cells. Film structure was studied on the dependence of growth time; physical film damage is found during the initial stages when depositing ZnTe on a grown ZnSe film. Preliminary studies of films grown by evaporation and their characterizations are presented at last. In this thesis, a better understanding of the electronic structure at interfaces is built in two different thin film devices, and the resulting band energy diagram of the corresponding devices offered effective feedback in materials and device.The problem of energy equilibrium in the human body has received a great deal.

Interband absorption edge in the topological insulators Bi2(Te1-xSex) 3

NASA Astrophysics Data System (ADS)

Dubroka, A.; Caha, O.; Hronček, M.; Friš, P.; Orlita, M.; Holý, V.; Steiner, H.; Bauer, G.; Springholz, G.; Humlíček, J.

2017-12-01

We have investigated the optical properties of thin films of topological insulators Bi2Te3 , Bi2Se3 , and their alloys Bi2(Te1-xSex) 3 on BaF2 substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi2Se3 , after the correction for the Burstein-Moss effect, we find the value of the direct band gap of 215 ±10 meV at 10 K. Our data support the picture that Bi2Se3 has a direct band gap located at the Γ point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward-oriented paraboloid, i.e., without a camel-back structure. In Bi2Te3 , the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent G W band-structure calculations suggesting that the direct interband transition does not occur at the Γ point but near the Z -F line of the Brillouin zone. In the Bi2(Te1-xSex) 3 alloy, the energy of the onset of direct interband transitions exhibits a maximum near x =0.3 (i.e., the composition of Bi2Te2Se ), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.

BariumCopperChFluorine (Ch = Sulfur, Selenium, Tellurium) p-type transparent conductors

NASA Astrophysics Data System (ADS)

Zakutayev, Andriy

BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 -- 3.5 eV) and a high concentration of free holes (1018 -- 1020 cm-3 ) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level close to the valence band maximum. BaCuChF thin film solid solutions prepared by pulsed laser deposition (PLD) have tunable properties, such as lattice constants, conductivity and optical band gaps. BaCuSF and BaCuSeF materials also feature room-temperature stable 3D excitons with spin-orbit-split levels. BaCuTeF has forbidden lowest-energy optical transitions which extends its transparency range. BaCuChF surfaces oxidize when exposed to air, but can be protected using Ch capping layers. Polycrystalline BaCuSeF thin films have a 4.85 eV work function, a 0.11 eV hole injection barrier into ZnPc, and 0.00 eV valence band offset with ZnTe. BaCuSeF should have s similar band offset and similar interfacial properties with CdTe and Cu(InGa)Se2, and BaCuSF should have no valence band offset with Cu2ZnSnS4, according to the transitivity rule. Therefore, BaCuSeF is suitable for applications as a p-layer in organic light-emitting diodes, p-i-n double-heterojunction and tandem chalcogenide solar cells.

Study of temperature dependent electrical properties of Se80-xTe20Bix (x = 0, 3, 6) glasses

NASA Astrophysics Data System (ADS)

Deepika, Singh, Hukum

2018-05-01

This paper reports the variation in electrical properties of Se80-xTe20Bix (x = 0, 3, 6) glasses studied at different temperatures. The amorphous samples were prepared using the melt quenching method and the electrical measurements were performed on Keithley Electrometer in the temperature ranging from 298-373 K. The I-V characteristics were noted at different temperatures and the data obtained was analysed to get dc electrical conductivity and activation energy of electrical conduction. Further, Mott's 3D VRH model has been applied to obtain density of states, hopping range and hopping energy at different temperatures. The obtained results show that dc electrical conductivity increases with increase in Bi composition in Se-Te system. These compositions also show close agreement to Mott's VRH model.

Strong 3D and 1D magnetism in hexagonal Fe-chalcogenides FeS and FeSe vs. weak magnetism in hexagonal FeTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parker, David S.

2017-06-13

We present a comparative theoretical study of the hexagonal forms of the Fe-chalcogenides FeS, FeSe and FeTe with their better known tetragonal forms. While the tetragonal forms exhibit only an incipient antiferromagnetism and experimentally show superconductivity when doped, the hexagonal forms of FeS and FeSe display a robust magnetism. We show that this strong magnetism arises from a van Hove singularity associated with the direct Fe-Fe c-axis chains in the generally more three-dimensional NiAs structure. We also find that hexagonal FeTe is much less magnetic than the other two hexagonal materials, so that unconventional magnetically-mediated superconductivity is possible, although amore » large T c value is unlikely.« less

Association of DSM-IV Posttraumatic Stress Disorder With Traumatic Experience Type and History in the World Health Organization World Mental Health Surveys.

PubMed

Liu, Howard; Petukhova, Maria V; Sampson, Nancy A; Aguilar-Gaxiola, Sergio; Alonso, Jordi; Andrade, Laura Helena; Bromet, Evelyn J; de Girolamo, Giovanni; Haro, Josep Maria; Hinkov, Hristo; Kawakami, Norito; Koenen, Karestan C; Kovess-Masfety, Viviane; Lee, Sing; Medina-Mora, Maria Elena; Navarro-Mateu, Fernando; O'Neill, Siobhan; Piazza, Marina; Posada-Villa, José; Scott, Kate M; Shahly, Victoria; Stein, Dan J; Ten Have, Margreet; Torres, Yolanda; Gureje, Oye; Zaslavsky, Alan M; Kessler, Ronald C

2017-03-01

Previous research has documented significant variation in the prevalence of posttraumatic stress disorder (PTSD) depending on the type of traumatic experience (TE) and history of TE exposure, but the relatively small sample sizes in these studies resulted in a number of unresolved basic questions. To examine disaggregated associations of type of TE history with PTSD in a large cross-national community epidemiologic data set. The World Health Organization World Mental Health surveys assessed 29 TE types (lifetime exposure, age at first exposure) with DSM-IV PTSD that was associated with 1 randomly selected TE exposure (the random TE) for each respondent. Surveys were administered in 20 countries (n = 34 676 respondents) from 2001 to 2012. Data were analyzed from October 1, 2015, to September 1, 2016. Prevalence of PTSD assessed with the Composite International Diagnostic Interview. Among the 34 676 respondents (55.4% [SE, 0.6%] men and 44.6% [SE, 0.6%] women; mean [SE] age, 43.7 [0.2] years), lifetime TE exposure was reported by a weighted 70.3% of respondents (mean [SE] number of exposures, 4.5 [0.04] among respondents with any TE). Weighted (by TE frequency) prevalence of PTSD associated with random TEs was 4.0%. Odds ratios (ORs) of PTSD were elevated for TEs involving sexual violence (2.7; 95% CI, 2.0-3.8) and witnessing atrocities (4.2; 95% CI, 1.0-17.8). Prior exposure to some, but not all, same-type TEs was associated with increased vulnerability (eg, physical assault; OR, 3.2; 95% CI, 1.3-7.9) or resilience (eg, participation in sectarian violence; OR, 0.3; 95% CI, 0.1-0.9) to PTSD after the random TE. The finding of earlier studies that more general history of TE exposure was associated with increased vulnerability to PTSD across the full range of random TE types was replicated, but this generalized vulnerability was limited to prior TEs involving violence, including participation in organized violence (OR, 1.3; 95% CI, 1.0-1.6), experience of physical violence (OR, 1.4; 95% CI, 1.2-1.7), rape (OR, 2.5; 95% CI, 1.7-3.8), and other sexual assault (OR, 1.6; 95% CI, 1.1-2.3). The World Mental Health survey findings advance understanding of the extent to which PTSD risk varies with the type of TE and history of TE exposure. Previous findings about the elevated PTSD risk associated with TEs involving assaultive violence was refined by showing agreement only for repeated occurrences. Some types of prior TE exposures are associated with increased resilience rather than increased vulnerability, connecting the literature on TE history with the literature on resilience after adversity. These results are valuable in providing an empirical rationale for more focused investigations of these specifications in future studies.

Electronic structure and low temperature magnetoresistance of polycrystalline TlMQ2 (M = Sc, Bi, Q = Se, Te)

NASA Astrophysics Data System (ADS)

Aswathy, Vijayakumar Sajitha; Varma, Manoj Raama; Sankar, Cheriyedath Raj

2018-05-01

Thallium based ternary chalcogenide TlBiSe2 having α-NaFeO2 structure type is a candidate of 3D topological insulator family with very large positive linear magnetoresistance. Herein, we report the magnetoresistance studies along with the electronic structure of TlScQ2 (Q = Se, Te) system of the same structure type. Our calculations predict selenide to be a narrow indirect band-gap semiconductor whereas telluride is metallic with intriguing band dispersion characteristics. We observed huge positive MR for the polycrystalline TlBiSe2 and comparatively low MR for TlScQ2 which limits their chance to possess nontrivial surface states.

Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Chun-Sheng; To, Bobby; Glynn, Stephen

2016-11-21

We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ~0.5 degrees. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvementmore » of resistivity uniformity by the K treatment.« less

Composite-Nanoparticles Thermal History Sensors

DTIC Science & Technology

2014-05-01

Nanostructures Under Different Hydrothermal Synthesis Conditions Fig. 5. SEM image of PbTe solid nano- and micro-cubes obtained at 100 !C (a) and 160 !C (b...Nanostructures Under Different Hydrothermal Synthesis Conditions For the preparation of PbSe microflowers, a similar pro- cedure was followed with NaTeO3...Telluride and Selenide Nanostructures Under Different Hydrothermal Synthesis Conditions For the preparation of PbSe microflowers, a similar pro- cedure

Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor

NASA Astrophysics Data System (ADS)

Shen, Huaibin; Zheng, Ying; Wang, Hongzhe; Xu, Weiwei; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Li, Lin Song

2013-11-01

In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using ‘greener’ chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50-75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 103 mA cm-2 and 17.7 mW cm-2 at 8 V it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.

Identification of Microalgae by Laser Desorption/Ionization Mass Spectrometry Coupled with Multiple Nanomatrices.

PubMed

Peng, Lung-Hsiang; Unnikrishnan, Binesh; Shih, Chi-Yu; Hsiung, Tung-Ming; Chang, Jeng; Hsu, Pang-Hung; Chiu, Tai-Chia; Huang, Chih-Ching

2016-04-01

In this study, we demonstrate a simple method to identify microalgae by surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS) using three different substrates: HgSe, HgTe, and HgTeSe nanostructures. The fragmentation/ionization processes of complex molecules in algae varied according to the heat absorption and transfer efficiency of the nanostructured matrices (NMs). Therefore, the mass spectra obtained for microalgae showed different patterns of m/z values for different NMs. The spectra contained both significant and nonsignificant peaks. Constructing a Venn diagram with the significant peaks obtained for algae when using HgSe, HgTe, and HgTeSe NMs in m/z ratio range 100-1000, a unique relationship among the three sets of values was obtained. This unique relationship of sets is different for each species of microalgae. Therefore, by observing the particular relationship of sets, we successfully identified different algae such as Isochrysis galbana, Emiliania huxleyi, Thalassiosira weissflogii, Nannochloris sp., Skeletonema cf. costatum, and Tetraselmis chui. This simple and cost-effective SALDI-MS analysis method coupled with multi-nanomaterials as substrates may be extended to identify other microalgae and microorganisms in real samples. Graphical Abstract Identification of microalgae by surface-assisted laser desorption/ionization mass spectrometry coupled with three different mercury-based nanosubstrates.

Two-dimensional wide-band-gap nitride semiconductors: Single-layer 1 T -X N2 (X =S ,Se , and Te )

NASA Astrophysics Data System (ADS)

Lin, Jia-He; Zhang, Hong; Cheng, Xin-Lu; Miyamoto, Yoshiyuki

2016-11-01

Recently, the two-dimensional (2D) semiconductors arsenene and antimonene, with band gaps larger than 2.0 eV, have attracted tremendous interest, especially for potential applications in optoelectronic devices with a photoresponse in the blue and UV range. Motivated by this exciting discovery, types of highly stable wide-band-gap 2D nitride semiconductors were theoretically designed. We propose single-layer 1 T -X N2 (X =S , Se, and Te) via first-principles simulations. We compute 1 T -X N2 (X =S , Se, and Te) with indirect band gaps of 2.825, 2.351, and 2.336 eV, respectively. By applying biaxial strain, they are able to induce the transition from a wide-band-gap semiconductor to a metal, and the range of absorption spectra of 1 T -X N2 (X =S , Se, and Te) obviously extend from the ultraviolet region to the blue-purple light region. With an underlying graphene, we find that 1 T -X N2 can completely shield the light absorption of graphene in the range of 1-1.6 eV. Our research paves the way for optoelectronic devices working under blue or UV light, and mechanical sensors based on these 2D crystals.

Fiber sensor on the basis of Ge26As17Se25Te32 glass for FEWS analysis

NASA Astrophysics Data System (ADS)

Velmuzhov, A. P.; Shiryaev, V. S.; Sukhanov, M. V.; Kotereva, T. V.; Churbanov, M. F.; Zernova, N. S.; Plekhovich, A. D.

2018-01-01

The high-purity Ge26As17Se25Te32 glass sample was prepared by chemical distillation purification method. This glass is characterized by high value of glass transition temperature (263°С), high optical transparency in the spectral range of 2-10 μm, and low content of residual impurities. The Ge26As17Se25Te32 glass rods were drawn into single-index fibers using the "rod" method and the single crucible technique. The optical losses in the 400 μm diameter fiber, fabricated by the "rod" method, were within 0.3-1 dB/m in the spectral range 5.2-9.3 μm. The minimum optical losses in the 320 μm diameter fiber, fabricated by the "crucible" technique, were 1.6-1.7 dB/m in the spectral range 6-8.5 μm. Using these Ge26As17Se25Te32 glass fibers as a sensor, the aqueous solutions of acetone (0-20 mol.%) and ethanol (0-90 mol.%) were analyzed by fiber evanescent wave spectroscopy. Peculiarities in the change of the integrated intensity and spectral position of absorption bands of these organic substances in dependence on the analyte composition and the length of the sensitive zone were established.

The lunar core can be a major reservoir for volatile elements S, Se, Te and Sb.

PubMed

Steenstra, Edgar S; Lin, Yanhao; Dankers, Dian; Rai, Nachiketa; Berndt, Jasper; Matveev, Sergei; van Westrenen, Wim

2017-11-06

The Moon bears a striking compositional and isotopic resemblance to the bulk silicate Earth (BSE) for many elements, but is considered highly depleted in many volatile elements compared to BSE due to high-temperature volatile loss from Moon-forming materials in the Moon-forming giant impact and/or due to evaporative loss during subsequent magmatism on the Moon. Here, we use high-pressure metal-silicate partitioning experiments to show that the observed low concentrations of volatile elements sulfur (S), selenium (Se), tellurium (Te), and antimony (Sb) in the silicate Moon can instead reflect core-mantle equilibration in a largely to fully molten Moon. When incorporating the core as a reservoir for these elements, their bulk Moon concentrations are similar to those in the present-day bulk silicate Earth. This suggests that Moon formation was not accompanied by major loss of S, Se, Te, Sb from Moon-forming materials, consistent with recent indications from lunar carbon and S isotopic compositions of primitive lunar materials. This is in marked contrast with the losses of other volatile elements (e.g., K, Zn) during the Moon-forming event. This discrepancy may be related to distinctly different cosmochemical behavior of S, Se, Te and Sb within the proto-lunar disk, which is as of yet virtually unconstrained.

Optic phonon bandwidth and lattice thermal conductivity: The case of L i 2 X ( X = O , S, Se, Te)

DOE PAGES

Mukhopadhyay, S.; Lindsay, L.; Parker, D. S.

2016-06-07

Here, we examine the lattice thermal conductivities ( l) of Li 2X (X=O, S, Se, Te) using a first-principles Peierls-Boltzmann transport methodology. We find low l values ranging between 12 and 30 W/m-K despite light Li atoms, a large mass difference between constituent atoms and tightly bunched acoustic branches, all features that give high l in other materials including BeSe (630 W/m -1K -1), BeTe (370 W/m -1K -1) and cubic BAs (3150 W/m -1K -1). Together these results suggest a missing ingredient in the basic guidelines commonly used to understand and predict l. Unlike typical simple systems (e.g., Si,more » GaAs, SiC), the dominant resistance to heat-carrying acoustic phonons in Li 2Se and Li 2Te comes from interactions of these modes with two optic phonons. These interactions require significant bandwidth and dispersion of the optic branches, both present in Li 2X materials. Finally, these considerations are important for the discovery and design of new materials for thermal management applications, and give a more comprehensive understanding of thermal transport in crystalline solids.« less

Quantum Hall effect in dual gated BiSbTeSe2 topological insulator

NASA Astrophysics Data System (ADS)

Chong, Su Kong; Han, Kyu Bum; Nagaoka, Akira; Harmer, Jared; Tsuchikawa, Ryuichi; Sparks, Taylor D.; Deshpande, Vikram V.

The discovery of topological insulators (TIs) has expanded the family of Dirac materials and enables the probing of exotic matter such as Majorana fermions and magnetic monopoles. Different from conventional 2D electron gas, 3D TIs exhibit a gapped insulating bulk and gapless topological surface states as a result of the strong spin-orbit coupling. BiSbTeSe2 is also known to be a 3D TI with a large intrinsic bulk gap of about 0.3 eV and a single Dirac cone surface state. The highly bulk insulating BiSbTeSe2 permits surface dominated conduction, which is an ideal system for the study of quantum Hall effect (QHE). Due to the spin-momentum locking, the Dirac fermions at the topological surface states have a degeneracy of one. In the QH regime, the Hall conductance is quantized to (n + 1 / 2) e2 / h , where n is an integer and the factor of half is related to Berry curvature. In this work, we study the QHE 3D TI using a dual gated BiSbTeSe2 device. By tuning the chemical potentials on top and bottom surfaces, integer QHE with Landau filling factors, ν = 0, +/-1, and +/-2 are observed.

Tunable Intrinsic Spin Hall Conductivities in Bi2(Se,Te)3 Topological Insulators

NASA Astrophysics Data System (ADS)

Şahin, Cüneyt; Flatté, Michael E.

2015-03-01

It has been recently shown by spin-transfer torque measurements that Bi2Se3 exhibits a very large spin Hall conductivity (SHC). It is expected that Bi2Te3, a topological insulator with similar crystal and band structures as well as large spin-orbit coupling, would also exhibit a giant SHC. In this study we have calculated intrinsic spin Hall conductivities of Bi2Se3andBi2Te3 topological insulators from a tight-binding Hamiltonian including two nearest-neighbor interactions. We have calculated the Berry curvature, used the Kubo formula in the static, clean limit and shown that both materials exhibit giant spin Hall conductivities, consistent with the results of Ref. 1 and larger than previously reported Bi1-xSbx alloys. The density of Berry curvature has also been computed from the full Brillouin zone in order to compute the dependence of the SHC in these materials on the Fermi energy. Finally we report the intrinsic SHC for Bi2(Se,Te)3 topological insulators, which changes dramatically with doping or gate voltage. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

Influence of substrate type on transport properties of superconducting FeSe0.5Te0.5 thin films

NASA Astrophysics Data System (ADS)

Yuan, Feifei; Iida, Kazumasa; Langer, Marco; Hänisch, Jens; Ichinose, Ataru; Tsukada, Ichiro; Sala, Alberto; Putti, Marina; Hühne, Ruben; Schultz, Ludwig; Shi, Zhixiang

2015-06-01

FeSe0.5Te0.5 thin films were grown by pulsed laser deposition on CaF2, LaAlO3 and MgO substrates and structurally and electro-magnetically characterized in order to study the influence of the substrate on their transport properties. The in-plane lattice mismatch between FeSe0.5Te0.5 bulk and the substrate shows no influence on the lattice parameters of the films, whereas the type of substrate affects the crystalline quality of the films and, therefore, the superconducting properties. The film on MgO showed an extra peak in the angular dependence of critical current density Jc(θ) at θ = 180° (H||c), which arises from c-axis defects as confirmed by transmission electron microscopy. In contrast, no Jc(θ) peaks for H||c were observed in films on CaF2 and LaAlO3. Jc(θ) can be scaled successfully for both films without c-axis correlated defects by the anisotropic Ginzburg-Landau approach with appropriate anisotropy ratio γJ. The scaling parameter γJ is decreasing with decreasing temperature, which is different from what we observed in FeSe0.5Te0.5 films on Fe-buffered MgO substrates.

Criteria for extending the operation periods of thermoelectric converters based on IV-VI compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadia, Yatir, E-mail: yatttir@yahoo.com; Ohaion-Raz, Tsion; Ben-Yehuda, Ohad

The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations, had positioned the research of renewable energy conversion methods in general and of thermoelectric direct conversion of thermal into electrical energies in particular, in the forefront of the currently active applicative sciences. IV-VI thermoelectric compounds (e.g. GeTe, PbTe and SnTe) and their alloys comprise some of the most efficient thermoelectric compositions ever reported. Yet a proper utilization of such materials in practical thermoelectric devices, still requires an overcoming the so-called technological “valley of death”, including among others, transport properties' degradation, duemore » to sublimation of volatile Te rich species, while being subjected to elevated temperatures for long periods of time. In an attempt to establish practical operation criteria for extending the operation periods of such thermoelectric converters, it is currently shown based on thermal gravimetric and metallurgical considerations that such harmful sublimation can be practically bridged over by limiting the maximal operating temperatures to the 410–430 °C range for GeTe rich alloys and to 510–530 °C for PbTe and SnTe rich alloys, depending of the thermoelectric leg's diameter. - Graphical abstract: Evaporation rate in the GeTe and PbTe system showing the measured evaporation rates and the maximal operating temperatures for different compositions. In addition, the microstructure after evaporation is shown for PbTe, TAGS-85, and doped Pb{sub 0.13}Ge{sub 087}Te. Display Omitted - Highlights: • Evaporation rates of GeTe and PbTe based thermoelectric compounds were determined. • A criterion for their maximum operating temperature was established. • The materials showed phase separations and off-stoichiometry compositions.« less

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

NASA Astrophysics Data System (ADS)

Chen, Rongzhen; Persson, Clas

2017-06-01

We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1-xTex)2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1-xTex)2 is at ħω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 - 150 nm, and the efficiency increases to ˜30% if the Auger effect is diminished.

Thermal expansion and specific heat of Cr2TeO6 and Fe2TeO6 by first principles calculations

NASA Astrophysics Data System (ADS)

Mishra, Vinayak

2018-05-01

Cr2TeO6 and Fe2TeO6 crystallize in tetragonal structure. These compounds are formed in nuclear reactors. Therefore, study of thermal expansion of these compounds is important. In this paper, using WIEN2k code we have calculated the volume dependent total energies E(V) of these materials at zero kelvin. Subsequently, we have applied the quasi harmonic approximation, in order to include the thermal effects. Using our calculations, we have predicted the thermal expansion and specific heat at high temperatures. The calculated properties for Fe2TeO6 are in very good agreement with the reported experimental results.

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE PAGES

Gul, R.; Roy, U. N.; Camarda, G. S.; ...

2017-03-28

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

Thermoelectric properties, Shubnikov-de Haas effect and mobility of charge carriers in bismuth antimony tellurides and selenides and nanocomposite based on these materials

NASA Astrophysics Data System (ADS)

Kulbachinskii, V. A.; Kytin, V. G.; Kudryashov, A. A.; Lunin, R. A.; Banerjee, A.

2017-04-01

We describe here the study of the Shubnikov-de Haas effect and thermoelectric properties of p-(Bi0.5Sb0.5)2Te3 single crystals doped with Ga, n-Bi2-xTlxSe3 and p-Sb2-xTlxTe3. Using Fourier spectra of the oscillations we calculated the mobility of charge carriers and its variation upon doping. We found that Ga has a donor effect in p-(Bi0.5Sb0.5)2Te3, Tl is an acceptor in n-Bi2-xTlxSe3 and increases the mobility of electrons, while in p-Sb2-xTlxTe3, Tl is a donor and decreases the mobility of holes. We consider the evolution of the defectiveness of crystals that leads to the observed effects. We also synthesized and investigated nanocomposites of solid solutions Sb2Te3-xSex (0 < x < 1). When Se concentration increases in Sb2Te3-xSex, the concentration of holes decreases. At the same time the Seebeck coefficient decreases. This is not typical for semiconductors but correlates with the earlier data. A theoretical model was developed to calculate simultaneously the dependences of the Seebeck coefficient, Hall coefficient and conductivity on the selenium concentration x. Calculations showed that for a simultaneous quantitative description of the thermoelectric and galvanomagnetic data it is necessary to take into consideration both the evolution of the band structure of Sb2Te3-xSex and partial localization of holes.

Core-shell solar cell fabrication using heterostructure of ZnO-nanowires arrays decorated with sputtered CdTe-nanoparticles

NASA Astrophysics Data System (ADS)

Akbarnejad, Elaheh; Dehghan Nayeri, Fatemeh; Ghoranneviss, Mahmood

2018-03-01

Core-shell heterostructures of ZnO-NWs/CdTe-NPs were fabricated through covering ZnO-NWs arrays using CdTe-NPs and the room temperature RF magnetron sputtering method. The influence of different CdTe-NPs deposition time (5, 20, 40 and 60 min) on the physical properties of core-shell heterostructures were investigated. In order to achieve the highest coverage level and a wide range of optical absorption at a visible range for a ZnO-NWs/CdTe-NPs (60 min) array, FTO/ZnO-NWs/CdTe-NPs (60 min)/Ni/Au core-shell solar cells were used. Solar cell fabrication was performed by soaking the samples in a saturated CdCl2 solution in methanol and a post-annealing treatment at 400 °C for 1 h in air which led to grain growth, the passivation of deep level defects, and the decrease of stacking faults. Short-circuit current and power conversion efficiency of the fabricated cell under illumination with visible light AM1.5 (100 mW cm-2) were 13.3 mA cm-2 and 3.41%, respectively. It was found that introducing a thin interfacial layer of CdSe to the configuration (FTO/ZnO-NWs/CdSe (10 nm)/CdTe-NPs (60 min)/Ni/Au) led to a 5.58% enhancement of photovoltaic performance of the solar cell (20.9 mA cm-2), which is 63.6% more than that of the same configuration without CdSe.

A Comparison of Point Defects in Cd 1-xZn xTe 1-ySe y Crystals Grown by Bridgman and Traveling Heater Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, R.; Roy, U. N.; Camarda, G. S.

In this study, the properties of point defects in Cd 1–xZn xTe 1–ySe y (CZTS) radiation detectors are characterized using deep-level transient spectroscopy and compared between materials grown using two different methods, the Bridgman method and the traveling heater method. The nature of the traps was analyzed in terms of their capture cross-sections and trap concentrations, as well as their effects on the measured charge-carrier trapping and de-trapping times, and then compared for the two growth techniques. The results revealed that Se addition to CdZnTe can reduce the V Cd – concentration. In Travelling Heater Method (THM) and Bridgman Methodmore » (BM) grown CZTS detectors, besides a few similarities in the shallow and medium energy traps, there were major differences in the deep traps. It was observed that the excess-Te and lower growth-temperature conditions in THM-grown CZTS led to a complete compensation of V Cd – and two additional traps (attributed to Te i – and Te Cd ++ appearing at around E v + 0.26 eV and E c – 0.78 eV, respectively). The 1.1-eV deep trap related to large Te secondary phases was a dominant trap in the BM-grown CZTS crystals. In addition to i-DLTS data, the effects of point defects induced due to different processing techniques on the detector's resistivity, spectral response to gammas, and μτ product were determined.« less

Prediction of weak and strong topological insulators in layered semiconductors.

NASA Astrophysics Data System (ADS)

Felser, Claudia

2013-03-01

We investigate a new class of ternary materials such as LiAuSe and KHgSb with a honeycomb structure in Au-Se and Hg-Sb layers. We demonstrate the band inversion in these materials similar to HgTe, which is a strong precondition for existence of the topological surface states. In contrast with graphene, these materials exhibit strong spin-orbit coupling and a small direct band gap at the point. Since these materials are centrosymmetric, it is straightforward to determine the parity of their wave functions, and hence their topological character. Surprisingly, the compound with strong spin-orbit coupling (KHgSb) is trivial, whereas LiAuSe is found to be a topological insulator. However KHgSb is a weak topological insulators in case of an odd number of layers in the primitive unit cell. Here, the single-layered KHgSb shows a large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors. In collaboration with Binghai Yan, Lukas Müchler, Hai-Jun Zhang, Shou-Cheng Zhang and Jürgen Kübler.

First-principles study of ternary Li-Al-Te compounds under high pressure

NASA Astrophysics Data System (ADS)

Wang, Youchun; Tian, Fubo; Li, Da; Duan, Defang; Xie, Hui; Liu, Bingbing; Zhou, Qiang; Cui, Tian

2018-02-01

The ternary Li-Al-Te compounds were investigated by the first-principle evolutionary calculation based on density function theory. Apart from the known structure, I-42d LiAlTe2 and P3m1 LiAlTe2, several new structures were discovered, P-3m1 LiAlTe2, Pnma LiAlTe2, C2/c Li9AlTe2, Immm Li9AlTe2 and P4/mmm Li6AlTe. We determined that the I-42d LiAlTe2 firstly changed to P-3m1 phase at 6 GPa, and then into the Pnma structure at 65 GPa, Pnma phase was stable up at least to 120 GPa. I-42d LiAlTe2 was a pseudo-direct band gap semiconductor, but P-3m1 LiAlT2 was an indirect band gap semiconductor. This may be caused by the pressure effect. Subsequently, it was metallized under pressure. Pnma LiAlTe2 was also metallic at the pressure we studied. C2/c Li9AlTe2 was stable above 4 GPa, then turned into Immm phase at 60 GPa. C2/c Li9AlTe2 was an indirect band gap semiconductor. The results show that P4/mmm Li6AlTe was stable and metallized in the pressure range of 0.7-120 GPa. The calculations of DOS and PDOS indicate that the arrangement of electrons near Fermi energy can be affected by the increase of Li. The calculated ELF results and Bader charge analysis indicate that there was no covalent bond between Al and Te atoms for high-pressure Pnma LiAlTe2, Li9AlTe2 and Li6AlTe. For Li9AlTe2 and Li6AlTe, different from LiAlTe2, Al atoms not connect with Te atoms, but link with Li atoms. The results were further proved by Mulliken population analysis. And the weak covalent bonds between Li and Al atoms stem from the hybridization of Li s and Al p presented in PDOS diagrams. We further deduced that the pressure effect and the increase of Li content may result in the disappearance of Al-Te bonds for Li-Al-Te compound under extreme pressure.

Predicted Realization of Cubic Dirac Fermion in Quasi-One-Dimensional Transition-Metal Monochalcogenides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Qihang; Zunger, Alex

We show that the previously predicted “cubic Dirac fermion,” composed of six conventional Weyl fermions including three with left-handed and three with right-handed chirality, is realized in a specific, stable solid state system that has been made years ago, but was not appreciated as a “cubically dispersed Dirac semimetal” (CDSM). We identify the crystal symmetry constraints and find the space group P6 3/m as one of the two that can support a CDSM, of which the characteristic band crossing has linear dispersion along the principle axis but cubic dispersion in the plane perpendicular to it. We then conduct a materialmore » search using density functional theory, identifying a group of quasi-one-dimensional molybdenum monochalcogenide compounds A I(MoX VI) 3 (AI = Na, K, Rb, In, Tl; X VI = S , Se, Te) as ideal CDSM candidates. Studying the stability of the A ( MoX ) 3 family reveals a few candidates such as Rb(MoTe) 3 and Tl(MoTe) 3 that are predicted to be resilient to Peierls distortion, thus retaining the metallic character. Furthermore, the combination of one dimensionality and metallic nature in this family provides a platform for unusual optical signature—polarization-dependent metallic vs insulating response.« less

Predicted Realization of Cubic Dirac Fermion in Quasi-One-Dimensional Transition-Metal Monochalcogenides

DOE PAGES

Liu, Qihang; Zunger, Alex

2017-05-09

We show that the previously predicted “cubic Dirac fermion,” composed of six conventional Weyl fermions including three with left-handed and three with right-handed chirality, is realized in a specific, stable solid state system that has been made years ago, but was not appreciated as a “cubically dispersed Dirac semimetal” (CDSM). We identify the crystal symmetry constraints and find the space group P6 3/m as one of the two that can support a CDSM, of which the characteristic band crossing has linear dispersion along the principle axis but cubic dispersion in the plane perpendicular to it. We then conduct a materialmore » search using density functional theory, identifying a group of quasi-one-dimensional molybdenum monochalcogenide compounds A I(MoX VI) 3 (AI = Na, K, Rb, In, Tl; X VI = S , Se, Te) as ideal CDSM candidates. Studying the stability of the A ( MoX ) 3 family reveals a few candidates such as Rb(MoTe) 3 and Tl(MoTe) 3 that are predicted to be resilient to Peierls distortion, thus retaining the metallic character. Furthermore, the combination of one dimensionality and metallic nature in this family provides a platform for unusual optical signature—polarization-dependent metallic vs insulating response.« less

Four-wave mixing in CdMnTeSe: In crystals

NASA Astrophysics Data System (ADS)

Koziarska-Glinka, B.; Wojtowicz, T.; Miotkowski, I.; Furdyna, J. K.; Suchocki, A.

1998-02-01

It is shown that the four-wave mixing technique can be used as a spectroscopic tool for studying the properties of bistable centers in semiconductors. Two metastable centers with different lattice relaxation energy have been identified in the Cd 1- xMn xTe 1- ySe x: In crystal. The power dependence of the FWM signal provides additional support for the "negative-U" model of metastable centers in this material.

SPECTROSCOPIC INVESTIGATION OF (NH4)2S TREATED GaSeTe FOR RADIATION DETECTOR APPLICATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nelson, A; Laurence, T; Conway, A

2009-08-04

The surface of the layered III-VI chalcogenide semiconductor GaSeTe was treated with (NH{sub 4}){sub 2}S at 60 C to modify the surface chemistry and determine the effect on transport properties. Room temperature photoluminescence (PL) measurements were used to assess the effect of the (NH{sub 4}){sub 2}S treatment on surface defect states. Evaluation of the subsequent surface chemistry was performed with high-resolution core-level photoemission measurements. Metal overlayers were deposited on the (NH{sub 4}){sub 2}S treated surfaces and the I-V characteristics were measured. The measurements were correlated to understand the effect of (NH{sub 4}){sub 2}S modification of the interfacial electronic structure withmore » the goal of optimizing the metal/GaSeTe interface for radiation detector devices.« less

Thermal annealing induced structural and optical properties of Se{sub 72}Te{sub 25}In{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathak, H. P.; Dwivedi, D. K., E-mail: todkdwivedi@gmail.com; Shukla, Nitesh

2016-05-06

Thin films of a- Se{sub 72}Te{sub 25}In{sub 3} were prepared by vacuum evaporation technique in a base pressure of 10{sup -6} Torr on to well cleaned glass substrate. a-Se{sub 72}Te{sub 25}In{sub 3} thin films were annealed at different temperatures below their crystallization temperatures for 2h. The structural analysis of the films has been investigated using X-ray diffraction technique. The optical absorption spectra of these films were measured in the wavelength range 400-1100 nm in order to derive the absorption coefficient of these films. The optical band gap of as prepared and annealed films as a function of photon energy hasmore » been studied. It has been found that the optical band gap decreases with increasing annealing temperatures in the present system.« less

Dynamic diffraction effects and coherent breathing oscillations in ultrafast electron diffraction in layered 1T-TaSeTe

PubMed Central

Wei, Linlin; Sun, Shuaishuai; Guo, Cong; Li, Zhongwen; Sun, Kai; Liu, Yu; Lu, Wenjian; Sun, Yuping; Tian, Huanfang; Yang, Huaixin; Li, Jianqi

2017-01-01

Anisotropic lattice movements due to the difference between intralayer and interlayer bonding are observed in the layered transition-metal dichalcogenide 1T-TaSeTe following femtosecond laser pulse excitation. Our ultrafast electron diffraction investigations using 4D-transmission electron microscopy (4D-TEM) clearly reveal that the intensity of Bragg reflection spots often changes remarkably due to the dynamic diffraction effects and anisotropic lattice movement. Importantly, the temporal diffracted intensity from a specific crystallographic plane depends on the deviation parameter s, which is commonly used in the theoretical study of diffraction intensity. Herein, we report on lattice thermalization and structural oscillations in layered 1T-TaSeTe, analyzed by dynamic diffraction theory. Ultrafast alterations of satellite spots arising from the charge density wave in the present system are also briefly discussed. PMID:28470025

High pressure and temperature induced structural and elastic properties of lutetium chalcogenides

NASA Astrophysics Data System (ADS)

Shriya, S.; Kinge, R.; Khenata, R.; Varshney, Dinesh

2018-04-01

The high-pressure structural phase transition and pressure as well temperature induced elastic properties of rock salt to CsCl structures in semiconducting LuX (X = S, Se, and Te) chalcogenides compound have been performed using effective interionic interaction potential with emphasis on charge transfer interactions and covalent contribution. Estimated values of phase transition pressure and the volume discontinuity in pressure-volume phase diagram indicate the structural phase transition from ZnS to NaCl structure. From the investigations of elastic constants the pressure (temperature) dependent volume collapse/expansion, melting temperature TM, Hardness (HV), and young modulus (E) the LuX lattice infers mechanical stiffening, and thermal softening.

Gap features of layered iron-selenium-tellurium compound below and above the superconducting transition temperature by break-junction spectroscopy combined with STS

NASA Astrophysics Data System (ADS)

Ekino, T.; Sugimoto, A.; Gabovich, A. M.

2018-05-01

We studied correlations between the superconducting gap features of Te-substituted FeSe observed by scanning tunnelling spectroscopy (STS) and break-junction tunnelling spectroscopy (BJTS). At bias voltages outside the superconducting gap-energy range, the broad gap structure exists, which becomes the normal-state gap above the critical temperature, T c. Such behaviour is consistent with the model of the partially gapped density-wave superconductor involving both superconducting gaps and pseudogaps, which has been applied by us earlier to high-Tc cuprates. The similarity suggests that the parent electronic spectrum features should have much in common for these classes of materials.

The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

PubMed

Xiao, Z; Camino, F E

2009-04-01

Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

First-principles study of amorphous Ga4Sb6Te3 phase-change alloys

NASA Astrophysics Data System (ADS)

Bouzid, Assil; Gabardi, Silvia; Massobrio, Carlo; Boero, Mauro; Bernasconi, Marco

2015-05-01

First-principles molecular dynamics simulations within the density functional theory framework were performed to generate amorphous models of the Ga4Sb6Te3 phase change alloy by quenching from the melt. We find that Ga-Sb and Ga-Te are the most abundant bonds with only a minor amount of Sb-Te bonds participating to the alloy network. Ga and four-coordinated Sb atoms present a tetrahedral-like geometry, whereas three-coordinated Sb atoms are in a pyramidal configuration. The tetrahedral-like geometries are similar to those of the crystalline phase of the two binary compounds GaTe and GaSb. A sizable fraction of Sb-Sb bonds is also present, indicating a partial nanoscale segregation of Sb. Despite the fact that the composition Ga4Sb6Te3 lies on the pseudobinary Ga Sb -Sb2Te3 tie line, the amorphous network can be seen as a mixture of the two binary compounds GaTe and GaSb with intertwined elemental Sb.

Synthesis characterisation series of newly fabricated type II CdSe CdSe/CdTe nanocrystals and their optical properties

NASA Astrophysics Data System (ADS)

Ahmed, A. S.; Christopher, W.

2018-03-01

Nanocrystalline semiconductors exhibit different properties due to two basic factors. They possess high surface to volume ratio and the actual size of particle can determine the electronic and physical properties of the material. The small size results in an observable quantum confinement effect, defined by the increasing bandgap accompanied by the quantization of the energy levels to discrete values. In present work we have synthesized the series of cadmium selenide/cadmium telluride (CdSe/CdTe) core/shell and CdSe/CdTe/CdS core/shell/shell to investigate the biexciton energy through transient absorption measurements. These structures are type II nanocrystals are with a hole in the shell and the electron confined to the core. We specifically investigate the effect of nanoparticle shape on the electronic structure and ultrafast electronic dynamics in the band-edge exciton states of CdSe quantum dots, nanorods, and nanoplatelets. Particle size was chosen to enable straightforward comparisons of the effects of particle shape on the spectra and dynamics without retuning the laser source. In our results the Uv-vis showed only a mild redshift in the first excitonic an elongated tail with increasing shell thickness. High resolution Transmission Electron Microscopy (HRTEM) shows the slight agglomeration of the nanocrystals but still the size distribution was calculate able. Spherical small crystals ranging from 5.9 nm to 10 nm are observed. CdTe/CdSe structures were quasi spherical with a rough diameter 6 nm with some little agglomerated structure. . The spherical nanocrystals could be peanut shaped oriented along the c axis or the spherical only, which could explain the two peak emission. p-XRD results indicate the predominant wurtzite structure throughout.

Magnetic order tuned by Cu substitution in Fe 1.1–zCu zTe

DOE PAGES

Wen, Jinsheng; Xu, Zhijun; Xu, Guangyong; ...

2012-07-02

We study the effects of Cu substitution in Fe₁.₁Te, the nonsuperconducting parent compound of the iron-based superconductor, Fe₁₊ yTe₁₋ xSe x, utilizing neutron scattering techniques. It is found that the structural and magnetic transitions, which occur at ~60 K without Cu, are monotonically depressed with increasing Cu content. By 10% Cu for Fe, the structural transition is hardly detectable, and the system becomes a spin glass below 22 K, with a slightly incommensurate ordering wave vector of (0.5–δ, 0, 0.5) with δ being the incommensurability of 0.02, and correlation length of 12 Å along the a axis and 9 Åmore » along the c axis. With 4% Cu, both transition temperatures are at 41 K, though short-range incommensurate order at (0.42, 0, 0.5) is present at 60 K. With further cooling, the incommensurability decreases linearly with temperature down to 37 K, below which there is a first-order transition to a long-range almost-commensurate antiferromagnetic structure. A spin anisotropy gap of 4.5 meV is also observed in this compound. Our results show that the weakly magnetic Cu has a large effect on the magnetic correlations; it is suggested that this is caused by the frustration of the exchange interactions between the coupled Fe spins.« less

Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potential reducing the secondary-electron yield at a semiconductor surface

NASA Astrophysics Data System (ADS)

Kimura, Kenji; Usui, Satoshi; Nakajima, Kaoru

2000-12-01

We have measured secondary-electron (SE) yield γ induced by 0.5 MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface. The position-dependent SE production rate is derived from the observed γ. The SE production rate normalized by the observed mean square charge of the reflected ions is almost independent of the atomic number of the projectile ion. This indicates that the surface track potential induced by the projectile ion is negligibly small to affect the SE emission at semiconductor surfaces probably due to rapid relaxation processes.

Modelling of segmented high-performance thermoelectric generators with effects of thermal radiation, electrical and thermal contact resistances

PubMed Central

Ouyang, Zhongliang; Li, Dawen

2016-01-01

In this study, segmented thermoelectric generators (TEGs) have been simulated with various state-of-the-art TE materials spanning a wide temperature range, from 300 K up to 1000 K. The results reveal that by combining the current best p-type TE materials, BiSbTe, MgAgSb, K-doped PbTeS and SnSe with the strongest n-type TE materials, Cu-Doped BiTeSe, AgPbSbTe and SiGe to build segmented legs, TE modules could achieve efficiencies of up to 17.0% and 20.9% at ΔT = 500 K and ΔT = 700 K, respectively, and a high output power densities of over 2.1 Watt cm−2 at the temperature difference of 700 K. Moreover, we demonstrate that successful segmentation requires a smooth change of compatibility factor s from one end of the TEG leg to the other, even if s values of two ends differ by more than a factor of 2. The influence of the thermal radiation, electrical and thermal contact effects have also been studied. Although considered potentially detrimental to the TEG performance, these effects, if well-regulated, do not prevent segmentation of the current best TE materials from being a prospective way to construct high performance TEGs with greatly enhanced efficiency and output power density. PMID:27052592

Hybrid morphology dependence of CdTe:CdSe bulk-heterojunction solar cells

PubMed Central

2014-01-01

A nanocrystal thin-film solar cell operating on an exciton splitting pattern requires a highly efficient separation of electron-hole pairs and transportation of separated charges. A hybrid bulk-heterojunction (HBH) nanostructure providing a large contact area and interpenetrated charge channels is favorable to an inorganic nanocrystal solar cell with high performance. For this freshly appeared structure, here in this work, we have firstly explored the influence of hybrid morphology on the photovoltaic performance of CdTe:CdSe bulk-heterojunction solar cells with variation in CdSe nanoparticle morphology. Quantum dot (QD) or nanotetrapod (NT)-shaped CdSe nanocrystals have been employed together with CdTe NTs to construct different hybrid structures. The solar cells with the two different hybrid active layers show obvious difference in photovoltaic performance. The hybrid structure with densely packed and continuously interpenetrated two phases generates superior morphological and electrical properties for more efficient inorganic bulk-heterojunction solar cells, which could be readily realized in the NTs:QDs hybrid. This proved strategy is applicable and promising in designing other highly efficient inorganic hybrid solar cells. PMID:25386107

Hybrid morphology dependence of CdTe:CdSe bulk-heterojunction solar cells.

PubMed

Tan, Furui; Qu, Shengchun; Zhang, Weifeng; Wang, Zhanguo

2014-01-01

A nanocrystal thin-film solar cell operating on an exciton splitting pattern requires a highly efficient separation of electron-hole pairs and transportation of separated charges. A hybrid bulk-heterojunction (HBH) nanostructure providing a large contact area and interpenetrated charge channels is favorable to an inorganic nanocrystal solar cell with high performance. For this freshly appeared structure, here in this work, we have firstly explored the influence of hybrid morphology on the photovoltaic performance of CdTe:CdSe bulk-heterojunction solar cells with variation in CdSe nanoparticle morphology. Quantum dot (QD) or nanotetrapod (NT)-shaped CdSe nanocrystals have been employed together with CdTe NTs to construct different hybrid structures. The solar cells with the two different hybrid active layers show obvious difference in photovoltaic performance. The hybrid structure with densely packed and continuously interpenetrated two phases generates superior morphological and electrical properties for more efficient inorganic bulk-heterojunction solar cells, which could be readily realized in the NTs:QDs hybrid. This proved strategy is applicable and promising in designing other highly efficient inorganic hybrid solar cells.

Thermodynamic Properties of AgIn2Te3I and AgIn2Te3Br, Determined by EMF Method

NASA Astrophysics Data System (ADS)

Moroz, M. V.; Prokhorenko, M. V.; Prokhorenko, S. V.; Yatskov, M. V.; Reshetnyak, O. V.

2018-01-01

Differential thermal analysis (DTA), X-ray diffraction (XRD), and electromotive force (EMF) are used to triangulate Ag-In-Te-I(Br) systems in the vicinity of compounds AgIn2Te3I and AgIn2Te3Br. The three-dimensional position of the AgIn2Te3I-InTe-Ag2Te-AgI and AgIn2Te3Br-InTe-Ag3TeBr phase areas with respect to the figurative points of silver is used to create equations of potential-determining chemical reactions. The potential-determining reactions are conducted in (-)C|Ag|Ag3GeS3I(Br) glass|D|C(+) electrochemical cells (ECCs), where C stands for inert (graphite) electrodes, Ag and D are ECC electrodes (D denotes alloys of one-, three-, and four-phase areas), and Ag3GeS3I and Ag3GeS3Br glasses are membranes with purely ionic Ag+ conductivity. Linear parts of the temperature dependences of the cell EMFs are used to calculate the standard integral thermodynamic functions of saturated solid solutions based on AgIn2Te3I and AgIn2Te3Br, and the relative partial thermodynamic functions of silver in the stoichiometric quaternary compounds.

Density functional simulations of Sb-rich GeSbTe phase change alloys.

PubMed

Gabardi, S; Caravati, S; Bernasconi, M; Parrinello, M

2012-09-26

We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge(1)Sb(1)Te(1) and Ge(2)Sb(4)Te(5). Comparison with previous results on the most studied Ge(2)Sb(2)Te(5) allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm(-1) are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge(2)Sb(2)Te(5). All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

Density functional simulations of Sb-rich GeSbTe phase change alloys

NASA Astrophysics Data System (ADS)

Gabardi, S.; Caravati, S.; Bernasconi, M.; Parrinello, M.

2012-09-01

We generated models of the amorphous phase of Sb-rich GeSbTe phase change alloys by quenching from the melt within density functional molecular dynamics. We considered the two compositions Ge1Sb1Te1 and Ge2Sb4Te5. Comparison with previous results on the most studied Ge2Sb2Te5 allowed us to draw some conclusions on the dependence of the structural properties of the amorphous phase on the alloy composition. Vibrational and electronic properties were also scrutinized. Phonons at high frequencies above 200 cm-1 are localized in tetrahedra around Ge atoms in Sb-rich compounds as well as in Ge2Sb2Te5. All compounds are semiconducting in the amorphous phase, with a band gap in the range 0.7-1.0 eV.

Association of DSM-IV Posttraumatic Stress Disorder With Traumatic Experience Type and History in the World Health Organization World Mental Health Surveys

PubMed Central

Liu, Howard; Petukhova, Maria V.; Sampson, Nancy A.; Aguilar-Gaxiola, Sergio; Alonso, Jordi; Andrade, Laura Helena; Bromet, Evelyn J.; de Girolamo, Giovanni; Haro, Josep Maria; Hinkov, Hristo; Kawakami, Norito; Koenen, Karestan C.; Kovess-Masfety, Viviane; Lee, Sing; Medina-Mora, Maria Elena; Navarro-Mateu, Fernando; O’Neill, Siobhan; Piazza, Marina; Posada-Villa, José; Scott, Kate M.; Shahly, Victoria; Stein, Dan J.; Have, Margreet ten; Torres, Yolanda; Gureje, Oye; Zaslavsky, Alan M.; Kessler, Ronald C.

2017-01-01

IMPORTANCE Previous research has documented significant variation in the prevalence of posttraumatic stress disorder (PTSD) depending on the type of traumatic experience (TE) and history of TE exposure, but the relatively small sample sizes in these studies resulted in a number of unresolved basic questions. OBJECTIVE To examine disaggregated associations of type of TE history with PTSD in a large cross-national community epidemiologic data set. DESIGN, SETTING, AND PARTICIPANTS The World Health Organization World Mental Health surveys assessed 29 TE types (lifetime exposure, age at first exposure) with DSM-IV PTSD that was associated with 1 randomly selected TE exposure (the random TE) for each respondent. Surveys were administered in 20 countries (n = 34 676 respondents) from 2001 to 2012. Data were analyzed from October 1, 2015, to September 1, 2016. MAIN OUTCOMES AND MEASURES Prevalence of PTSD assessed with the Composite International Diagnostic Interview. RESULTS Among the 34 676 respondents (55.4% [SE, 0.6%] men and 44.6% [SE, 0.6%] women; mean [SE] age, 43.7 [0.2] years), lifetime TE exposure was reported by a weighted 70.3% of respondents (mean [SE] number of exposures, 4.5 [0.04] among respondents with any TE). Weighted (by TE frequency) prevalence of PTSD associated with random TEs was 4.0%. Odds ratios (ORs) of PTSD were elevated for TEs involving sexual violence (2.7; 95% CI, 2.0–3.8) and witnessing atrocities (4.2; 95% CI, 1.0–17.8). Prior exposure to some, but not all, same-type TEs was associated with increased vulnerability (eg, physical assault; OR, 3.2; 95% CI, 1.3–7.9) or resilience (eg, participation in sectarian violence; OR, 0.3; 95% CI, 0.1–0.9) to PTSD after the random TE. The finding of earlier studies that more general history of TE exposure was associated with increased vulnerability to PTSD across the full range of random TE types was replicated, but this generalized vulnerability was limited to prior TEs involving violence, including participation in organized violence (OR, 1.3; 95% CI, 1.0–1.6), experience of physical violence (OR, 1.4; 95% CI, 1.2–1.7), rape (OR, 2.5; 95% CI, 1.7–3.8), and other sexual assault (OR, 1.6; 95% CI, 1.1–2.3). CONCLUSION AND RELEVANCE The World Mental Health survey findings advance understanding of the extent to which PTSD risk varies with the type of TE and history of TE exposure. Previous findings about the elevated PTSD risk associated with TEs involving assaultive violence was refined by showing agreement only for repeated occurrences. Some types of prior TE exposures are associated with increased resilience rather than increased vulnerability, connecting the literature on TE history with the literature on resilience after adversity. These results are valuable in providing an empirical rationale for more focused investigations of these specifications in future studies. PMID:28055082

Combined crystal chemistry and DFT studies of ThNCl and Th2N2X (X: chalcogen) behaving as pseudo-binaries

NASA Astrophysics Data System (ADS)

Matar, Samir F.; Kfoury, Charbel N.

2018-02-01

Common features and peculiar differentiations characterize binary and ternary thorium nitride Th3N4, thorium nitride chloride ThNCl and the family of thorium nitride chalcogenides Th2N2X (X = O, S, Se, Te) investigated in the framework of the quantum density functional theory DFT. Particularly the dominant effect of the Th-N covalent bond stronger than ionic Th-Cl/Th-X ones as identified from analyses of bonding from overlap integral, electron localization function mapping, electronic density of states and charge transfer, is found at the origin of the layered-like structural arrangements in Th-N monolayers within ThNCl (Cl / [ThN]/ Cl) and Th-N double layers in Th2N2X (X / [Th2N2] / X) with the result of pseudo binary compounds: [ThN]+Cl- and [Th2N2] 2+X2-. All compounds are found semi-conducting with ∼2 eV band gap. It is claimed that such insights into Solid State Chemistry can help rationalizing complex compounds more comprehensively (two examples given).

Biology and toxicology of tellurium explored by speciation analysis.

PubMed

Ogra, Yasumitsu

2017-05-24

Tellurium (Te) is widely used in industry because it has unique physicochemical properties. Although Te is a non-essential element in animals and plants, it is expected to be metabolized to organometallic compounds having a carbon-Te bond in living organisms exposed to inorganic Te compounds. Thus, the speciation and identification of tellurometabolites are expected to contribute to the depiction of the metabolic chart of Te. Speciation by elemental mass spectrometry and identification by molecular mass spectrometry coupled with separation techniques have significantly contributed to the discovery of tellurometabolites in animals and plants. The aim of this mini review is to present recent advances in the biology and toxicology of tellurium as revealed by speciation and identification by molecular mass spectrometry.

Aeration controls the reduction and methylation of tellurium by the aerobic, tellurite-resistant marine yeast Rhodotorula mucilaginosa.

PubMed

Ollivier, Patrick R L; Bahrou, Andrew S; Church, Thomas M; Hanson, Thomas E

2011-07-01

We previously described a marine, tellurite-resistant strain of the yeast Rhodotorula mucilaginosa that both precipitates intracellular Te0 and volatilizes methylated Te compounds when grown in the presence of the oxyanion tellurite. The uses of microbes as a "green" route for the production of Te0-containing nanostructures and for the remediation of Te-oxyanion wastes have great potential, and so a more thorough understanding of this process is required. Here, Te precipitation and volatilization catalyzed by R. mucilaginosa were examined in continuously aerated and sealed (low oxygen concentration) batch cultures. Continuous aeration was found to strongly promote Te volatilization while inhibiting Te0 precipitation. This differs from the results in sealed batch cultures, for which tellurite reduction to Te0 was found to be very efficient. We show also that volatile Te species may be degraded rapidly in medium and converted to the particulate form by biological activity. Further experiments revealed that Te0 precipitates produced by R. mucilaginosa can be further transformed to volatile and dissolved Te species. However, it was not clearly determined whether Te0 is a required intermediate for Te volatilization. Based on these results, we conclude that low oxygen concentrations will be the most efficient for production of Te0 nanoparticles while limiting the production of toxic volatile Te species, although the production of these compounds may never be completely eliminated.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

PubMed Central

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-01-01

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses. PMID:28772687

Ab initio calculations of the structural, electronic, thermodynamic and thermal properties of BaSe1-x Te x alloys

NASA Astrophysics Data System (ADS)

Drablia, S.; Boukhris, N.; Boulechfar, R.; Meradji, H.; Ghemid, S.; Ahmed, R.; Omran, S. Bin; El Haj Hassan, F.; Khenata, R.

2017-10-01

The alkaline earth metal chalcogenides are being intensively investigated because of their advanced technological applications, for example in photoluminescent devices. In this study, the structural, electronic, thermodynamic and thermal properties of the BaSe1-x Te x alloys at alloying composition x = 0, 0.25, 0.50, 0.75 and 1 are investigated. The full potential linearized augmented plane wave plus local orbital method designed within the density functional theory was used to perform the total energy calculations. In this research work the effect of the composition on the results of the parameters and bulk modulus as well as on the band gap energy is analyzed. From our results, we found a deviation of the obtained results for the lattice constants from Vegard’s law as well as a deviation of the value of the bulk modulus from the linear concentration dependence. We also carried out a microscopic analysis of the origin of the band gap energy bowing parameter. Furthermore, the thermodynamic stability of the considered alloys was explored through the measurement of the miscibility critical temperature. The quasi-harmonic Debye model, as implemented in the Gibbs code, was used to predict the thermal properties of the BaSe1-x Te x alloys, and these investigations comprise our first theoretical predictions concerning the BaSe1-x Te x alloys.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhuang, J. C.; Li, Z.; Xu, X.

We present a detailed investigation on the doping dependence of the upper critical field H{sub c2}(T) of FeSe{sub x}Te{sub 1−x} thin films (0.18 ≤ x ≤ 0.90) by measuring the electrical resistivity as a function of magnetic field. The H{sub c2}(T) curves exhibit a downturn behavior with decreasing temperature in all the samples, owing to the Pauli-limited effect (spin paramagnetic effect). The Pauli-limited effect on the upper critical field can be monotonically modulated by variation of the Se/Te composition. Our results show that Te-doping induced disorder and excess Fe atoms give rise to enhancement of the Pauli-limited effect.

Rhombohedral to Cubic Conversion of GeTe via MnTe Alloying Leads to Ultralow Thermal Conductivity, Electronic Band Convergence, and High Thermoelectric Performance.

PubMed

Zheng, Zheng; Su, Xianli; Deng, Rigui; Stoumpos, Constantinos; Xie, Hongyao; Liu, Wei; Yan, Yonggao; Hao, Shiqiang; Uher, Ctirad; Wolverton, Chris; Kanatzidis, Mercouri G; Tang, Xinfeng

2018-02-21

In this study, a series of Ge 1-x Mn x Te (x = 0-0.21) compounds were prepared by a melting-quenching-annealing process combined with spark plasma sintering (SPS). The effect of alloying MnTe into GeTe on the structure and thermoelectric properties of Ge 1-x Mn x Te is profound. With increasing content of MnTe, the structure of the Ge 1-x Mn x Te compounds gradually changes from rhombohedral to cubic, and the known R3m to Fm-3m phase transition temperature of GeTe moves from 700 K closer to room temperature. First-principles density functional theory calculations show that alloying MnTe into GeTe decreases the energy difference between the light and heavy valence bands in both the R3m and Fm-3m structures, enhancing a multiband character of the valence band edge that increases the hole carrier effective mass. The effect of this band convergence is a significant enhancement in the carrier effective mass from 1.44 m 0 (GeTe) to 6.15 m 0 (Ge 0.85 Mn 0.15 Te). In addition, alloying with MnTe decreases the phonon relaxation time by enhancing alloy scattering, reduces the phonon velocity, and increases Ge vacancies all of which result in an ultralow lattice thermal conductivity of 0.13 W m -1 K -1 at 823 K. Subsequent doping of the Ge 0.9 Mn 0.1 Te compositions with Sb lowers the typical very high hole carrier concentration and brings it closer to its optimal value enhancing the power factor, which combined with the ultralow thermal conductivity yields a maximum ZT value of 1.61 at 823 K (for Ge 0.86 Mn 0.10 Sb 0.04 Te). The average ZT value of the compound over the temperature range 400-800 K is 1.09, making it the best GeTe-based thermoelectric material.

Experimental determination of the absorption cross-section and molar extinction coefficient of CdSe and CdTe nanowires.

PubMed

Protasenko, Vladimir; Bacinello, Daniel; Kuno, Masaru

2006-12-21

Absorption cross-sections and corresponding molar extinction coefficients of solution-based CdSe and CdTe nanowires (NWs) are determined. Chemically grown semiconductor NWs are made via a recently developed solution-liquid-solid (SLS) synthesis, employing low melting Au/Bi bimetallic nanoparticle "catalysts" to induce one-dimensional (1D) growth. Resulting wires are highly crystalline and have diameters between 5 and 12 nm as well as lengths exceeding 10 microm. Narrow diameters, below twice the corresponding bulk exciton Bohr radius of each material, place CdSe and CdTe NWs within their respective intermediate to weak confinement regimes. Supporting this are solution linear absorption spectra of NW ensembles showing blue shifts relative to the bulk band gap as well as structure at higher energies. In the case of CdSe, the wires exhibit band edge emission as well as strong absorption/emission polarization anisotropies at the ensemble and single-wire levels. Analogous photocurrent polarization anisotropies have been measured in recently developed CdSe NW photodetectors. To further support fundamental NW optical/electrical studies as well as to promote their use in device applications, experimental absorption cross-sections are determined using correlated transmission electron microscopy, UV/visible extinction spectroscopy, and inductively coupled plasma atomic emission spectroscopy. Measured CdSe NW cross-sections for 1 microm long wires (diameters, 6-42 nm) range from 6.93 x 10(-13) to 3.91 x 10(-11) cm2 at the band edge (692-715 nm, 1.73-1.79 eV) and between 3.38 x 10(-12) and 5.50 x 10(-11) cm2 at 488 nm (2.54 eV). Similar values are obtained for 1 microm long CdTe NWs (diameters, 7.5-11.5 nm) ranging from 4.32 x 10(-13) to 5.10 x 10(-12) cm2 at the band edge (689-752 nm, 1.65-1.80 eV) and between 1.80 x 10(-12) and 1.99 x 10(-11) cm2 at 2.54 eV. These numbers compare well with previous theoretical estimates of CdSe/CdTe NW cross-sections far to the blue of the band edge, having order of magnitude values of 1.0 x 10(-11) cm2 at 488 nm. In all cases, experimental NW absorption cross-sections are 4-5 orders of magnitude larger than those for corresponding colloidal CdSe and CdTe quantum dots. Even when volume differences are accounted for, band edge NW cross-sections are larger by up to a factor of 8. When considered along with their intrinsic polarization sensitivity, obtained NW cross-sections illustrate fundamental and potentially exploitable differences between 0D and 1D materials.

Improved thermoelectric properties of Bi2Te3-xSex alloys by melt spinning and resistance pressing sintering

NASA Astrophysics Data System (ADS)

Cai, Xinzhi; Fan, Xi'an; Rong, Zhenzhou; Yang, Fan; Gan, Zhanghua; Li, Guangqiang

2014-03-01

Starting from bismuth, tellurium and selenium chunks, n-type Bi2Te3-xSex (x ⩽ 0.3) alloys were obtained by melt spinning (MS) combined with a resistance pressing sintering (RPS) process. The phases, microstructures and compositions of the samples were evaluated by x-ray diffraction, field emission scanning electron microscopy, and energy dispersive x-ray spectroscopy during each step in the preparation process, respectively. The influences of Se doping, MS and RPS processes on the thermoelectric (TE) properties of Bi2Te3-xSex alloys were investigated in detail. The Bi2Te3-xSex powders could be well compacted by the RPS process and the relative densities of the bulks prepared by RPS were all higher than 96%. The partially oriented lamellar structure could be observed at some regions of the samples prepared by RPS, and the monolayer thickness of the lamellar structure in the MS-RPS samples was smaller than that in the smelting-RPS sample. The MS process was confirmed as an excellent method to obtain fine microstructures and low lattice thermal conductivity for the TE materials. All evidence about electrical and thermal transport properties suggested that suitably increasing the Se content could effectively improve the ZT value. The maximum ZT value of 0.84 was obtained for the Bi2Te2.7Se0.3 prepared by MS-RPS at 423 K. As opposed to the conventional hot pressing and spark plasma sintering, the RPS method introduced here is more suitable for practical industrial application due to its cost saving and high efficiency.

Fourfold Clusters of Rovibrational Energies in H2Te Studied With an Ab Initio Potential Energy Function

NASA Technical Reports Server (NTRS)

Jensen, Per; Li, Yan; Hirsch, Gerhard; Buenker, Robert J.; Lee, Timothy J.; Arnold, James O. (Technical Monitor)

1994-01-01

We report an ab initio investigation of the cluster effect (i.e., the formation of nearly degenerate, four member groups of rotation-vibration energy levels at higher J and K(sub a). values) in the H2Te molecule. The potential energy function has been calculated ab initio at a total of 334 molecular geometries by means of the CCSD(T) method where the (1s-4f) core electrons of Te were described by an effective core potential. The values of the potential energy function obtained cover the region up to around 10,000/cm above the equilibrium energy. On the basis of the ab initio potential, the rotation-vibration energy spectra of H2Te-130 and its deuterated isotopomers have been calculated with the MORBID (Morse Oscillator Rigid Bender Internal Dynamics) Hamiltonian and computer program. In particular, we have calculated the rotational energy manifolds for J less than or = 40 in the vibrational ground state, the upsilon(sub 2) state, the "first triad" (the upsilon(sub l)/upsilon(sub 3)/2upsilon(sub 2) interacting vibrational states), and the "second triad" (the upsilon(sub 1) + upsilon(sub 2/upsilon(sub 2) + upsilon(sub 3)/3upsilon(sub 2) states) of H2Te-130. We find that the cluster formation in H2Te is very similar to those of of H2Se and H2S, which we have studied previously. However, contrary to semiclassical predictions, we do not determine any significant displacement of the clusters towards lower J values relative to H2Se. Hence the experimental observation of the cluster states in H2Te will be at least as difficult as in H2Se.

Superconductivity and valence state in layered single-crystal HfAs1.67Te0.12

NASA Astrophysics Data System (ADS)

Peng, Jian; Yu, Jia; Zhang, Shuai; Chen, Genfu

2018-01-01

We report a detailed study on single crystals of HfAs1.67Te0.12 within a PbFCl-type layered structure. The single crystals of the title compound were successfully grown using a chemical transport reaction. The temperature dependence of electrical resistivity ρ (T), AC magnetic susceptibility {χ }{AC}(T) and specific heat C(T) show a bulk superconductivity with transition temperature T c = 1.67 K. The jump of C/T at T c is comparable to the traditional BCS weak-coupling model. A full H-T phase diagram is established using the results of ρ (T,H) and C(T) under fields, suggesting a rather weak anisotropy [({H}c2\\parallel {ab}(0)/{H}c2\\parallel c(0)] of 1.8 in orbital limit dominated three-dimension-like superconducting system. The mixed-valence states of Hf and As observed in the binding energy from x-ray photoelectron spectroscopy are consistent with the single-crystal x-ray diffraction analysis, indicating that the As-Te disorder prefers to occur in the [HfAs] layer and a large amount of vacancies are present in tetragonal As layer. As compared to HfAs1.7Se0.2 (T c = 0.52 K), a positive-like vacancy effect on T c has been confirmed in HfAs1.67Te0.12. The analysis of the Hall coefficient implies that the hole-type carriers dominate the transport properties, which is in good agreement with the hole pockets at Fermi surface obtained in a band structure calculation. The detailed study of single-crystal HfAs1.67Te0.12 provides a possible candidate to discuss the non-magnetic Kondo effect.

On the electronic structure and thermoelectric properties of BiTeBr and BiTeI single crystals and of BiTeI with the addition of BiI{sub 3} and CuI

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, Vladimir A., E-mail: kulb@mig.phys.msu.ru; Kytin, Vladimir G.; Kudryashov, Alexey A.

The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin-orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. The optimized crystal structures show a tendency for the Bi-X (X=Br, I) bond elongation compared to the Bi-Te one. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within themore » frames of the acoustic phonons scattering model. Because of larger thermopower BiTeBr exhibits a twice higher thermoelectric figure-of-merit near room temperature, ZT=0.17, compared to BiTeI. The addition of 1 mass% of BiI{sub 3} or CuI to BiTeI decreases the mobility of electrons by two orders of magnitude, leading to significantly lower electrical conductivity, but at the same time effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. - Graphical abstract: View of the crystal structure of BiTeBr is shown in the figure The optimized crystal structures show a tendency for the Bi-X (X=Br, I) bond elongation compared to the Bi-Te one. The electronic structures were calculated for BiTeBr and BiTeI using the density-functional theory approach and accounting for the strong spin-orbital interaction. Qualitatively, the band structures for two compounds are similar, showing strong mixing of the p states of all elements in vicinity of the Fermi level, with the band gaps of 0.595 and 0.478 eV for BiTeBr and BiTeI, respectively. Both compounds are intrinsic n-type semiconductors but display a metallic-like conductivity coupled to rather large thermopower, which is rationalized within the frames of the acoustic phonons scattering model. The addition of 1 mass% of BiI{sub 3} or CuI to BiTeI effectively reduces the thermal conductivity. The prospects of further enhancing the thermoelectric efficiency are briefly discussed. Highlights: Black-Right-Pointing-Pointer BiTeBr and BiTeI feature mixing of p states of Bi, Te, and halogen near Fermi level. Black-Right-Pointing-Pointer BiTeBr has thermoelectric figure-of-merit ZT=0.17, two times that of BiTeI. Black-Right-Pointing-Pointer 1% CuI or BiI{sub 3} decrease dramatically electron mobility in BiTeI. Black-Right-Pointing-Pointer 1% CuI decreases thermal conductivity of BiTeI by a factor of 4, reaching 0.5 W m{sup -1} K.« less

NMR and transport measurements of copper chalcogenide and clathrate compounds

NASA Astrophysics Data System (ADS)

Sirusi Arvij, Ali

Due to limited sources of fossil fuels worldwide and a large percentage wasted as heat energy, searching for efficient thermoelectric materials to convert heat to electricity has gained a great deal of attention. Most of the attempts are focused on materials with substantially lower lattice thermal conductivity and narrow band gaps. Among them, inorganic clathrates and copper-based chalcogenides possess intrinsic low thermal conductivity which makes them promising thermoelectrics. In this work, nuclear magnetic resonance (NMR), transport, and magnetic measurements were performed on clathrates and copper-based chalcogenides to investigate their vibrational and electronic charge carrier properties, as well as the unknown structures of Cu2Se and Cu 2Te at low temperatures, and the effect of rattling of guest atoms in the clathrates. The NMR results in Ba8Ga16Ge30 indicate a pseudogap in the Ga electronic density of states, superposed upon a surprisingly large Ba contribution to the conduction band. Meanwhile, the phonon contributions to the Ga relaxation rates are large and increase more rapidly with temperature than typical semiconductors due to enhanced anharmonicity of the propagative phonon modes over a wide range. Moreover, the observed NMR shifts in the Ba8Cu5Si xGe41-x clathrates change in a nonlinear way with increasing Si substitution: from x = 0 to about 20 the shifts are essentially constant, while approaching x = 41 they increase rapidly, demonstrating a significant change in hybridizations vs Si substitution. NMR studies of Cu2Se show an initial appearance of ionic hopping in a narrow temperature range above 100 K, coinciding with the recently observed low-temperature phase transition. At room temperature and above, this goes over to rapid Cu-ion hopping and a single motionally narrowed line both above and below the alpha-beta structural transition. Furthermore, the NMR results on Cu2Te and Cu 1.98Ag0.2Te demonstrate unusually large negative chemical shifts, as well as large Cu and Te s-state contributions in the valence band. The large diamagnetic chemical shifts coincide with behavior previously identified for materials with topologically nontrivial band inversion, and in addition, the large metallic shifts point to analogous features in the valence band density of states, suggesting that Cu2Te may have similar inverted features.

Optimization of diffusion-weighted single-refocused spin-echo EPI by reducing eddy-current artifacts and shortening the echo time.

PubMed

Shrestha, Manoj; Hok, Pavel; Nöth, Ulrike; Lienerth, Bianca; Deichmann, Ralf

2018-03-30

The purpose of this work was to optimize the acquisition of diffusion-weighted (DW) single-refocused spin-echo (srSE) data without intrinsic eddy-current compensation (ECC) for an improved performance of ECC postprocessing. The rationale is that srSE sequences without ECC may yield shorter echo times (TE) and thus higher signal-to-noise ratios (SNR) than srSE or twice-refocused spin-echo (trSE) schemes with intrinsic ECC. The proposed method employs dummy scans with DW gradients to drive eddy currents into a steady state before data acquisition. Parameters of the ECC postprocessing algorithm were also optimized. Simulations were performed to obtain minimum TE values for the proposed sequence and sequences with intrinsic ECC. Experimentally, the proposed method was compared with standard DW-trSE imaging, both in vitro and in vivo. Simulations showed substantially shorter TE for the proposed method than for methods with intrinsic ECC when using shortened echo readouts. Data of the proposed method showed a marked increase in SNR. A dummy scan duration of at least 1.5 s improved performance of the ECC postprocessing algorithm. Changes proposed for the DW-srSE sequence and for the parameter setting of the postprocessing ECC algorithm considerably reduced eddy-current artifacts and provided a higher SNR.

Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb, and Fe

NASA Astrophysics Data System (ADS)

de Jong, N.; Frantzeskakis, E.; Zwartsenberg, B.; Huang, Y. K.; Wu, D.; Hlawenka, P.; Sańchez-Barriga, J.; Varykhalov, A.; van Heumen, E.; Golden, M. S.

2015-08-01

Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved, and core-level photoemission. Fe, Nb, and Ag were evaporated onto Bi1 .5Sb0 .5Te1 .7Se1 .3 (BSTS) surfaces both at room temperature and 38 K. The coverage and temperature dependence of the adsorption and interfacial formation process have been investigated, highlighting the effects of the overlayer growth on the occupied electronic structure of the TI. For all coverages at room temperature and for those equivalent to less than 0.2 monolayer at low temperature all three metals lead to a downward shift of the TI bands with respect to the Fermi level. At room temperature Ag appears to intercalate efficiently into the van der Waals gap of BSTS, accompanied by low-level substitution for the Te/Se atoms of the termination layer of the crystal. This Te/Se substitution with silver increases significantly for low temperature adsorption, and can even dominate the electrostatic environment of the Bi/Sb atoms in the BSTS near-surface region. On the other hand, Fe and Nb evaporants remain close to the termination layer of the crystal. On room temperature deposition, they initially substitute isoelectronically for Bi as a function of coverage, before substituting for Te/Se atoms. For low temperature deposition, Fe and Nb are too immobile for substitution processes and show a behavior consistent with clustering on the surface. For both Ag and Fe/Nb, these differing adsorption pathways still lead to the qualitatively similar and remarkable behavior for low temperature deposition that the chemical potential first moves downward (p -type dopant behavior) and then upward (n -type behavior) on increasing coverage.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Ji-Hui; Yuan, Qinghong; Deng, Huixiong

Current thermoelectric (TE) materials often have low performance or contain less abundant and/or toxic elements, thus limiting their large-scale applications. Therefore, new TE materials with high efficiency and low cost are strongly desirable. Here we demonstrate that SiS and SiSe monolayers made from nontoxic and earth-abundant elements intrinsically have low thermal conductivities arising from their low-frequency optical phonon branches with large overlaps with acoustic phonon modes, which is similar to the state-of-the-art experimentally demonstrated material SnSe with a layered structure. Together with high thermal power factors due to their two-dimensional nature, they show promising TE performances with large figure ofmore » merit (ZT) values exceeding 1 or 2 over a wide range of temperatures. We establish some basic understanding of identifying layered materials with low thermal conductivities, which can guide and stimulate the search and study of other layered materials for TE applications.« less

Atomistic tight-binding theory of excitonic splitting energies in CdX(X = Se, S and Te)/ZnS core/shell nanocrystals

NASA Astrophysics Data System (ADS)

Sukkabot, Worasak; Pinsook, Udomsilp

2017-01-01

Using the atomistic tight-binding theory (TB) and a configuration interaction description (CI), we numerically compute the excitonic splitting of CdX(X = Se, S and Te)/ZnS core/shell nanocrystals with the objective to explain how types of the core materials and growth shell thickness can provide the detailed manipulation of the dark-dark (DD), dark-bright (DB) and bright-bright (BB) excitonic splitting, beneficial for the active application of quantum information. To analyze the splitting of the excitonic states, the optical band gaps, ground-state wave function overlaps and atomistic electron-hole interactions tend to be numerically demonstrated. Based on the atomistic computations, the single-particle and excitonic gaps are mainly reduced with the increasing ZnS shell thickness owing to the quantum confinement. In the range of the higher to lower energies, the order of the single-particle gaps is CdSe/ZnS, CdS/ZnS and CdTe/ZnS core/shell nanocrystals, while one of the excitonic gaps is CdS/ZnS, CdSe/ZnS and CdTe/ZnS core/shell nanocrystals because of the atomistic electron-hole interaction. The strongest electron-hole interactions are mainly observed in CdSe/ZnS core/shell nanocrystals. In addition, the computational results underline that the energies of the dark-dark (DD), dark-bright (DB) and bright-bright (BB) excitonic splitting are generally reduced with the increasing ZnS growth shell thickness as described by the trend of the electron-hole exchange interaction. The high-to-low splitting of the excitonic states is demonstrated in CdSe/ZnS, CdTe/ZnS and CdS/ZnS core/shell nanocrystals because of the fashion in the electron-hole exchange interaction and overlaps of the electron-hole wave functions. As the resulting calculations, it is expected that CdS/ZnS core/shell nanocrystals are the best candidates to be the source of entangled photons. Finally, the comprehensive information on the excitonic splitting can enable the use of suitable core/shell nanocrystals for the entangled photons in the application of quantum information.

Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb2Se3

NASA Astrophysics Data System (ADS)

Das, Shekhar; Sirohi, Anshu; Kumar Gupta, Gaurav; Kamboj, Suman; Vasdev, Aastha; Gayen, Sirshendu; Guptasarma, Prasenjit; Das, Tanmoy; Sheet, Goutam

2018-06-01

Majority of the A2B3 -type chalcogenide systems with strong spin-orbit coupling (SOC), such as Bi2Se3,Bi2Te3 , and Sb2Te3 , etc., are topological insulators. One important exception is Sb2Se3 where a topological nontrivial phase was argued to be possible under ambient conditions, but such a phase could be detected to exist only under pressure. In this paper, we show that Sb2Se3 like Bi2Se3 displays a generation of highly spin-polarized current under mesoscopic superconducting point contacts as measured by point-contact Andreev reflection spectroscopy. In addition, we observe a large negative and anisotropic magnetoresistance of the mesoscopic metallic point contacts formed on Sb2Se3 . Our band-structure calculations confirm the trivial nature of Sb2Se3 crystals and reveal two trivial surface states one of which shows large spin splitting due to Rashba-type SOC. The observed high spin polarization and related phenomena in Sb2Se3 can be attributed to this spin splitting.

Investigation of transport properties of FeTe compound

NASA Astrophysics Data System (ADS)

Lodhi, Pavitra Devi; Solanki, Neha; Choudhary, K. K.; Kaurav, Netram

2018-05-01

Transport properties of FeTe parent compound has been investigated by measurements of electrical resistivity, magnetic susceptibility and Seebeck coefficient. The sample was synthesized through a standard solid state reaction route via vacuum encapsulation and characterized by x-ray diffraction, which indicated a tetragonal phase with space group P4/nmm. The parent FeTe compound does not exhibit superconductivity but shows an anomaly in the resistivity measurement at around 67 K, which corresponds to a structural phase transition along with in the vicinity of a magnetic phase transition. In the low temperature regime, Seebeck coefficient, S(T), exhibited an anomalous dip feature and negative throughout the temperature range, indicating electron-like charge carrier conduction mechanism.

N2C2M2 Experimentation and Validation: Understanding Its C2 Approaches and Implications

DTIC Science & Technology

2010-06-01

C O N FL IC TE D D EC O N FL IC TE D C O O R D IN A TE D C O LL A B O R A TI...Interactions (Shares and Posts) Log File LE VE L Fa ct oi d Se t Tr ia l TO TA L Va lu e TO TA L Va lu e / Su bj ec t Te nd en cy C TC TL s...80% 90% 100% CO N FL IC TE

Integration of CdSe/CdSexTe1-x Type-II Heterojunction Nanorods into Hierarchically Porous TiO2 Electrode for Efficient Solar Energy Conversion.

PubMed

Lee, Sangheon; Flanagan, Joseph C; Kang, Joonhyeon; Kim, Jinhyun; Shim, Moonsub; Park, Byungwoo

2015-12-07

Semiconductor sensitized solar cells, a promising candidate for next-generation photovoltaics, have seen notable progress using 0-D quantum dots as light harvesting materials. Integration of higher-dimensional nanostructures and their multi-composition variants into sensitized solar cells is, however, still not fully investigated despite their unique features potentially beneficial for improving performance. Herein, CdSe/CdSe(x)Te(1-x) type-II heterojunction nanorods are utilized as novel light harvesters for sensitized solar cells for the first time. The CdSe/CdSe(x)Te(1-x) heterojunction-nanorod sensitized solar cell exhibits ~33% improvement in the power conversion efficiency compared to its single-component counterpart, resulting from superior optoelectronic properties of the type-II heterostructure and 1-octanethiol ligands aiding facile electron extraction at the heterojunction nanorod-TiO(2) interface. Additional ~31% enhancement in power conversion efficiency is achieved by introducing percolation channels of large pores in the mesoporous TiO(2) electrode, which allow 1-D sensitizers to infiltrate the entire depth of electrode. These strategies combined together lead to 3.02% power conversion efficiency, which is one of the highest values among sensitized solar cells utilizing 1-D nanostructures as sensitizer materials.

Mo(3)Sb(7-x)Te(x) for Thermoelectric Power Generation

NASA Technical Reports Server (NTRS)

Snyder, G. Jeffrey; Gascoin, Frank S.; Rasmussen, Julia

2009-01-01

Compounds having compositions of Mo(3)Sb(7-x)Te(x) (where x = 1.5 or 1.6) have been investigated as candidate thermoelectric materials. These compounds are members of a class of semiconductors that includes previously known thermoelectric materials. All of these compounds have complex crystalline and electronic structures. Through selection of chemical compositions and processing conditions, it may be possible to alter the structures to enhance or optimize thermoelectric properties.

Bacterial recovery and recycling of tellurium from tellurium-containing compounds by Pseudoalteromonas sp. EPR3.

PubMed

Bonificio, W D; Clarke, D R

2014-11-01

Tellurium-based devices, such as photovoltaic (PV) modules and thermoelectric generators, are expected to play an increasing role in renewable energy technologies. Tellurium, however, is one of the scarcest elements in the earth's crust, and current production and recycling methods are inefficient and use toxic chemicals. This study demonstrates an alternative, bacterially mediated tellurium recovery process. We show that the hydrothermal vent microbe Pseudoalteromonas sp. strain EPR3 can convert tellurium from a wide variety of compounds, industrial sources and devices into metallic tellurium and a gaseous tellurium species. These compounds include metallic tellurium (Te(0)), tellurite (TeO3(2-)), copper autoclave slime, tellurium dioxide (TeO2), tellurium-based PV material (cadmium telluride, CdTe) and tellurium-based thermoelectric material (bismuth telluride, Bi2Te3). Experimentally, this was achieved by incubating these tellurium sources with the EPR3 in both solid and liquid media. Despite the fact that many of these tellurium compounds are considered insoluble in aqueous solution, they can nonetheless be transformed by EPR3, suggesting the existence of a steady state soluble tellurium concentration during tellurium transformation. These experiments provide insights into the processes of tellurium precipitation and volatilization by bacteria, and their implications on tellurium production and recycling. © 2014 The Society for Applied Microbiology.

Molecular Imaging with Quantum Dots Probing EMT and Prostate Cancer Metastasis in Live Animals

DTIC Science & Technology

2006-10-01

Grignon DJ, Cher ML. Severe combined immunodeficient-humodel of humanprostate cancer metastasis to human bone. Cancer Res 1999;59(8): 1987 – 1993. 14... Eisler , H. J., and Bawendi, M. (2003) Type-II quantum dots: CdTe/CdSe(core/shell) and CdSe/ZinTe(core/shell) heterostructures. J. Am. Chem. Soc. 125...S1044. 39. Cunha GR, Donjacour AA, Cooke PS, et al. The endocrinology and developmen- tal biology of the prostate. Endocr Rev 1987 ; 8:338-362. 40

Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure

NASA Astrophysics Data System (ADS)

Kim, Joon-Seok; Juneja, Rinkle; Salke, Nilesh P.; Palosz, Witold; Swaminathan, Venkataraman; Trivedi, Sudhir; Singh, Abhishek K.; Akinwande, Deji; Lin, Jung-Fu

2018-03-01

Topological insulators have been the subject of intense research interest due to their unique surface states that are topologically protected against scattering or defects. However, the relationship between the crystal structure and topological insulator state remains to be clarified. Here, we show the effects of hydrostatic pressure on the structural, vibrational, and topological properties of the topological insulator Bi1.5Sb0.5Te1.8Se1.2 up to 45 GPa using X-ray diffraction and Raman spectroscopy in a diamond anvil cell, together with first-principles theoretical calculations. Two pressure-induced structural phase transitions were observed: from ambient rhombohedral R 3 ¯ m phase to a monoclinic C2/m phase at ˜13 GPa, and to a disordered I4/mmm phase at ˜22 GPa. In addition, the alloy undergoes several electronic transitions within the R 3 ¯ m phase: indirect to direct bulk band gap transition at ˜5.8 GPa, bulk gap closing with an appearance of Dirac semimetal (DSM) state at ˜8.2 GPa, and to a trivial semimetal state at ˜12.1 GPa. Anomalies in c/a ratio and Raman full width at half maximum that coincide with the DSM phase suggest the contribution of electron-phonon coupling to the transition. Compared to binary end members Bi2Te3, Bi2Se3, and Sb2Te3, the structural phase transition and anomaly were observed at higher pressures in Bi1.5Sb0.5Te1.8Se1.2. These results suggest that the topological transitions are precursors to the structural phase transitions.

Structural and electronic properties of Cu2Q and CuQ (Q = O, S, Se, and Te) studied by first-principles calculations

NASA Astrophysics Data System (ADS)

Zhao, Ting; Wang, Yu-An; Zhao, Zong-Yan; Liu, Qiang; Liu, Qing-Ju

2018-01-01

In order to explore the similarity, difference, and tendency of binary copper-based chalcogenides, the crystal structure, electronic structure, and optical properties of eight compounds of Cu2Q and CuQ (Q = O, S, Se, and Te) have been calculated by density functional theory with HSE06 method. According to the calculated results, the electronic structure and optical properties of Cu2Q and CuQ present certain similarities and tendencies, with the increase of atomic number of Q elements: the interactions between Cu-Q, Cu-Cu, and Q-Q are gradually enhancing; the value of band gap is gradually decreasing, due to the down-shifting of Cu-4p states; the covalent feature of Cu atoms is gradually strengthening, while their ionic feature is gradually weakening; the absorption coefficient in the visible-light region is also increasing. On the other hand, some differences can be found, owing to the different crystal structure and component, for example: CuO presents the characteristics of multi-band gap, which is very favorable to absorb infrared-light; the electron transfer in CuQ is stronger than that in Cu2Q; the absorption peaks and intensity are very strong in the ultraviolet-light region and infrared-light region. The findings in the present work will help to understand the underlying physical mechanism of binary copper-based chalcogenides, and available to design novel copper-based chalcogenides photo-electronics materials and devices.

Elucidating the Impact of Chalcogen Content on the Photovoltaic Properties of Oxychalcogenide Perovkskites: NaMO3-x Qx (M=Nb, Ta; Q=S, Se, Te).

PubMed

Park, Heesoo; Alharbi, Fahhad H; Sanvito, Stefano; Tabet, Nouar; El-Mellouhi, Fedwa

2018-03-19

In the quest for nontoxic and stable perovskites for solar cells, we have conducted a systematic study of the effect of chalcogen content in oxychalcogenide perovskite by using DFT and quasi-particle perturbation theory. We explored the changes in the electronic structure due to the substitution of O atoms in NaNbO 3 and NaTaO 3 perovskite structures with various chalcogens (S, Se, Te) at different concentrations. Interestingly, the introduction of the chalcogen atoms resulted in a drastic reduction in the electronic band gap, which made some of the compounds fall within the visible range of the solar spectrum. In addition, our analysis of the electronic structure shows that the optical transition becomes direct as a result of the strong hybridization between the orbitals of the transition metal and those of the chalcogen ion, in contrast to the indirect band feature of NaNbO 3 and NaTaO 3 . We identified candidates with a high theoretical solar conversion efficiency that approached the Shockley-Queisser limit, which makes them suitable for thin-film solar cell applications. The present work serves as a guideline for experimental efforts by identifying the chalcogen content that should be targeted during the synthetic route of thermodynamically stable and strongly photoactive absorbers for oxychalcogenide perovskites in thin-film solar cells. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Imaging atomic-scale effects of high-energy ion irradiation on superconductivity and vortex pinning in Fe(Se,Te).

PubMed

Massee, Freek; Sprau, Peter Oliver; Wang, Yong-Lei; Davis, J C Séamus; Ghigo, Gianluca; Gu, Genda D; Kwok, Wai-Kwong

2015-05-01

Maximizing the sustainable supercurrent density, J C, is crucial to high-current applications of superconductivity. To achieve this, preventing dissipative motion of quantized vortices is key. Irradiation of superconductors with high-energy heavy ions can be used to create nanoscale defects that act as deep pinning potentials for vortices. This approach holds unique promise for high-current applications of iron-based superconductors because J C amplification persists to much higher radiation doses than in cuprate superconductors without significantly altering the superconducting critical temperature. However, for these compounds, virtually nothing is known about the atomic-scale interplay of the crystal damage from the high-energy ions, the superconducting order parameter, and the vortex pinning processes. We visualize the atomic-scale effects of irradiating FeSe x Te1-x with 249-MeV Au ions and find two distinct effects: compact nanometer-sized regions of crystal disruption or "columnar defects," plus a higher density of single atomic site "point" defects probably from secondary scattering. We directly show that the superconducting order is virtually annihilated within the former and suppressed by the latter. Simultaneous atomically resolved images of the columnar crystal defects, the superconductivity, and the vortex configurations then reveal how a mixed pinning landscape is created, with the strongest vortex pinning occurring at metallic core columnar defects and secondary pinning at clusters of point-like defects, followed by collective pinning at higher fields.

Quench hardening of Sb0.2 Bi1.8Te3, Bi2Te2.8Se0.2 and Sn0.2 Bi1.8Te3 single crystals

NASA Astrophysics Data System (ADS)

Soni, P. H.

2018-02-01

The V2-VI3 intermetallics are narrow band gap semiconductors and well known for their thermoelectric properties. They therefore offer a convenient route to tune band gap for manipulating thermoelectric parameters. The V group element Sb can be fruitfully used to substitute Bi in various proportions thus forming a psuedobinary solid solution. The electronic in general and the thermoelectric properties in particular of this psuedobinary have been amply reported. However there are no reports found on mechanical properties. I have used Sb0.2 Bi1.8Te3, Bi2Te2.8Se0.2 and Sn0.2 Bi1.8Te3single crystals grown using Bridgman technique for the quenching treatment followed by hardness testing. Vickers hardness tests were conducted on the cleavage planes of the crystals quenched from various high temperatures and the quench hardenening coefficient values have been determined. The hardness tests were carried out at various applied loads also to explore load dependence of the measured hardness. The results are reported in the paper.

Aeration Controls the Reduction and Methylation of Tellurium by the Aerobic, Tellurite-Resistant Marine Yeast Rhodotorula mucilaginosa▿

PubMed Central

Ollivier, Patrick R. L.; Bahrou, Andrew S.; Church, Thomas M.; Hanson, Thomas E.

2011-01-01

We previously described a marine, tellurite-resistant strain of the yeast Rhodotorula mucilaginosa that both precipitates intracellular Te(0) and volatilizes methylated Te compounds when grown in the presence of the oxyanion tellurite. The uses of microbes as a “green” route for the production of Te(0)-containing nanostructures and for the remediation of Te-oxyanion wastes have great potential, and so a more thorough understanding of this process is required. Here, Te precipitation and volatilization catalyzed by R. mucilaginosa were examined in continuously aerated and sealed (low oxygen concentration) batch cultures. Continuous aeration was found to strongly promote Te volatilization while inhibiting Te(0) precipitation. This differs from the results in sealed batch cultures, for which tellurite reduction to Te(0) was found to be very efficient. We show also that volatile Te species may be degraded rapidly in medium and converted to the particulate form by biological activity. Further experiments revealed that Te(0) precipitates produced by R. mucilaginosa can be further transformed to volatile and dissolved Te species. However, it was not clearly determined whether Te(0) is a required intermediate for Te volatilization. Based on these results, we conclude that low oxygen concentrations will be the most efficient for production of Te(0) nanoparticles while limiting the production of toxic volatile Te species, although the production of these compounds may never be completely eliminated. PMID:21602387

New vanadium tellurites: Syntheses, structures, optical properties of noncentrosymmetric VTeO{sub 4}(OH), centrosymmetric Ba{sub 2}V{sub 4}O{sub 8}(Te{sub 3}O{sub 10})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, Ming-Li; State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002; Marsh, Matthew

Two new vanadium tellurites, VTeO{sub 4}(OH) (1) and Ba{sub 2}V{sub 4}O{sub 8}(Te{sub 3}O{sub 10}) (2), have been synthesized successfully with the use of hydrothermal reactions. The crystal structures of the two compounds were determined by single-crystal X-ray diffraction. Compound 1 crystallizes in the polar space group Pca2{sub 1} (No. 29) while compound 2 crystallizes in the centrosymmetric space group C2/c (No. 15). The topography of compound 1 reveals a two-dimensional, layered structure comprised of VO{sub 6} octahedral chains and TeO{sub 3}(OH) zig-zag chains. Compound 2, on the contrary, features a three-dimensional [V{sub 4}O{sub 8}(Te{sub 3}O{sub 10})]{sup 4-} anionic framework withmore » Ba{sup 2+} ions filled into the 10-member ring helical tunnels. The [V{sub 4}O{sub 8}(Te{sub 3}O{sub 10})]{sup 4-} anionic network is the first 3D vanadium tellurite framework to be discovered in the alkaline-earth vanadium tellurite system. Powder second harmonic generation (SHG) measurements indicate that compound 1 shows a weak SHG response of about 0.3×KDP (KH{sub 2}PO{sub 4}) under 1064 nm laser radiation. Infrared spectroscopy, elemental analysis, thermal analysis, and dipole moment calculations have also been carried out. - Graphical abstract: VTeO{sub 4}(OH) (1) crystallizes in the noncentrosymmetric space group Pca2{sub 1} (No. 29) while Ba{sub 2}V{sub 4}O{sub 8}(Te{sub 3}O{sub 10}) (2) crystallizes in the centrosymmetric space group C2/c (No. 15). - Highlights: • VTeO{sub 4}(OH) (1) and Ba{sub 2}V{sub 4}O{sub 8}(Te{sub 3}O{sub 10}) (2) have been synthesized successfully with the use of hydrothermal reactions. • VTeO{sub 4}(OH) (1) crystallizes in the noncentrosymmetric space group Pca2{sub 1} and displays a weak SHG response. • VTeO{sub 4}(OH) (1) represents only the fourth SHG-active material found in vanadium tellurite systems. • Ba{sub 2}V{sub 4}O{sub 8}(Te{sub 3}O{sub 10}) (2) exhibits a novel three-dimensional [V{sub 4}O{sub 8}(Te{sub 3}O{sub 10})]{sup 4-} anionic framework.« less

Point defects in CdTe xSe 1-x crystals grown from a Te-rich solution for applications in detecting radiation

DOE PAGES

Gul, R.; Roy, U. N.; Bolotnikov, A. E.; ...

2015-04-15

We investigated cadmium telluride selenide (CdTeSe) crystals, newly grown by the Traveling Heater Method (THM), for the presence and abundance of point defects. Deep Level Transient spectroscopy (I-DLTS) was used to determine the energies of the traps, their capture cross sections, and densities. The bias across the detectors was varied from (1–30) V. Four types of point defects were identified, ranging from 10 meV to 0.35 eV. Two dominant traps at energies of 0.18 eV and 0.14 eV were studied in depth. Cd vacancies are found at lower concentrations than other point defects present in the material.

High volume method of making low-cost, lightweight solar materials

DOEpatents

Blue, Craig A.; Clemens, Art; Duty, Chad E.; Harper, David C.; Ott, Ronald D.; Rivard, John D.; Murray, Christopher S.; Murray, Susan L.; Klein, Andre R.

2014-07-15

A thin film solar cell and a method fabricating thin film solar cells on flexible substrates. The method includes including providing a flexible polymeric substrate, depositing a photovoltaic precursor on a surface of the substrate, such as CdTe, ZrTe, CdZnTe, CdSe or Cu(In,Ga)Se.sub.2, and exposing the photovoltaic precursor to at least one 0.5 microsecond to 10 second pulse of predominately infrared light emitted from a light source having a power output of about 20,000 W/cm.sup.2 or less to thermally convert the precursor into a crystalline photovoltaic material having a photovoltaic efficiency of greater than one percent, the conversion being carried out without substantial damage to the substrate.

Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kudryashov, A. A.; Kytin, V. G.; Lunin, R. A.

2016-07-15

The Shubnikov–de Haas effect and the Hall effect in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04) and p-Sb{sub 2–x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} and increases the electron mobility. In p-Sb{sub 2–x}Tl{sub x}Te{sub 3}, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, ismore » discussed.« less

The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga{sub 2}SeTe{sub 2} semiconductor alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdul-Jabbar, N. M.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720; Kalkan, B.

2014-08-04

We observe that pressure-induced amorphization of Ga{sub 2}SeTe{sub 2} (a III-VI semiconductor) is directly influenced by the periodicity of its intrinsic defect structures. Specimens with periodic and semi-periodic two-dimensional vacancy structures become amorphous around 10–11 GPa in contrast to those with aperiodic structures, which amorphize around 7–8 GPa. The result is an instance of altering material phase-change properties via rearrangement of stoichiometric vacancies as opposed to adjusting their concentrations. Based on our experimental findings, we posit that periodic two-dimensional vacancy structures in Ga{sub 2}SeTe{sub 2} provide an energetically preferred crystal lattice that is less prone to collapse under applied pressure. This ismore » corroborated through first-principles electronic structure calculations, which demonstrate that the energy stability of III-VI structures under hydrostatic pressure is highly dependent on the configuration of intrinsic vacancies.« less

The use of castor oil and ricinoleic acid in lead chalcogenide nanocrystal synthesis

NASA Astrophysics Data System (ADS)

Kyobe, Joseph W. M.; Mubofu, Egid B.; Makame, Yahya M. M.; Mlowe, Sixberth; Revaprasadu, Neerish

2016-08-01

A green solution-based thermolysis method for the synthesis of lead chalcogenide (PbE, E = S, Se, Te) nanocrystals in castor oil (CSTO) and its isolate ricinoleic acid (RA) is described. The blue shift observed from the optical spectra of CSTO and RA-capped PbE nanocrystals (NCs) confirmed the evidence of quantum confinement. The dimensions of PbE NCs obtained from NIR absorption spectra, transmission electron microscopy (TEM), and X-ray diffraction (XRD) studies were in good agreement. The particle sizes estimated were in the range of 20, 25, and 130 nm for castor oil-capped PbS, PbSe, and PbTe, respectively. Well-defined close to cubic-shaped particles were observed in the scanning electron microscopy (SEM) images of PbSe and PbTe nanocrystals. The high-resolution TEM and selective area electron diffraction (SAED) micrographs of the as-synthesized crystalline PbE NCs showed distinct lattice fringes with d-spacing distances corroborating with the standard values reported in literature.

Electronic structure and x-ray magnetic circular dichroism in Mn-doped topological insulators Bi2Se3 and Bi2Te3

NASA Astrophysics Data System (ADS)

Antonov, V. N.; Bekenov, L. V.; Uba, S.; Ernst, A.

2017-12-01

We studied the structural, electronic, and magnetic properties of Mn-doped topological insulators Bi2Se3 and Bi2Te3 within the density-functional theory (DFT) using the generalized gradient approximation (GGA) in the framework of the fully relativistic spin-polarized Dirac linear muffin-tin orbital band-structure method. The x-ray absorption spectra (XAS) and x-ray magnetic circular dichroism at the Mn K and L2 ,3 edges were investigated theoretically from first principles. The calculated results are in good agreement with experimental data. The complex fine structure of the Mn L2 ,3 XAS in Mn-doped Bi2Se3 and Bi2Te3 was found to be not compatible with a pure Mn3 + valency state. Its interpretation demands mixed valent states. The theoretically calculated x-ray emission spectra at the Mn K and L2 ,3 edges are also presented and analyzed.

Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takane, Daichi; Souma, Seigo; Center for Spintronics Research Network, Tohoku University, Sendai 980-8577

Recent discovery of bulk insulating topological insulator (TI) Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as amore » useful guide for developing TI-based electronic devices.« less

Research Update: Spatially resolved mapping of electronic structure on atomic level by multivariate statistical analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belianinov, Alex, E-mail: belianinova@ornl.gov; Ganesh, Panchapakesan; Lin, Wenzhi

2014-12-01

Atomic level spatial variability of electronic structure in Fe-based superconductor FeTe{sub 0.55}Se{sub 0.45} (T{sub c} = 15 K) is explored using current-imaging tunneling-spectroscopy. Multivariate statistical analysis of the data differentiates regions of dissimilar electronic behavior that can be identified with the segregation of chalcogen atoms, as well as boundaries between terminations and near neighbor interactions. Subsequent clustering analysis allows identification of the spatial localization of these dissimilar regions. Similar statistical analysis of modeled calculated density of states of chemically inhomogeneous FeTe{sub 1−x}Se{sub x} structures further confirms that the two types of chalcogens, i.e., Te and Se, can be identified bymore » their electronic signature and differentiated by their local chemical environment. This approach allows detailed chemical discrimination of the scanning tunneling microscopy data including separation of atomic identities, proximity, and local configuration effects and can be universally applicable to chemically and electronically inhomogeneous surfaces.« less

Thermally activated flux flow in FeSe0.5Te0.5 superconducting single crystal

NASA Astrophysics Data System (ADS)

Hamad, R. M.; Kayed, T. S.; Kunwar, S.; Ziq, Kh A.

2017-07-01

The current-voltage (J-E) isotherms of single crystal FeSe0.5Te0.5 sample have been measured at several temperatures near the transition temperature (Tc) and under applied magnetic fields (H). A power law (E ˜ Jβ ) has been used to fit the data and evaluate the activation energy Uo (T) using β = Uo/kBT. At low current density (J << Jc), the initial behaviour is associated with thermally activated flux Flow (TAFF) while at J >> Jc vortex flux flow (FF) behavior is expected. The effects of applied magnetic field on FF and TAFF also been investigated. We found that Uo(FF) was reduced with by about an order of magnitude in magnetic fields as low as ˜1.5 Tesla-the reduction in Uo(TAFF) is even faster than in Uo(FF)-hence reflecting the low pinning nature (defects, vacancies etc.) of FeSe0.5Te0.5 superconductor.

Experimental study of THz electro-optical sampling crystals ZnSe, ZnTe and GaP

NASA Astrophysics Data System (ADS)

Zhukova, M.; Makarov, E.; Putilin, S.; Tsypkin, A.; Chegnov, V.; Chegnova, O.; Bespalov, V.

2017-11-01

The application of optoelectronic techniques to the generation and detection of THz radiation is now well established. Wide gap semiconductor crystals of groups II-VI, III-V and III-VI are abundantly used. However, some limitations are occurred while using powerful laser systems. In this paper we introduce experimental results of two-photon absorption (2PA) in ZnSe, ZnTe and GaP studied with femtosecond pump-probe supercontinuum spectroscopy. Using of supercontinuum helps us to measure 2PA absorption dynamics and nonlinear index of refraction in wide frequency ranges. Besides influence of Fe concentration in ZnSe:Fe crystals on transmitted THz radiation is described.

Development of a ferromagnetic component in the superconducting state of Fe-excess Fe1.12Te1-xSex by electronic charge redistribution

NASA Astrophysics Data System (ADS)

Li, Wen-Hsien; Karna, Sunil K.; Hsu, Han; Li, Chi-Yen; Lee, Chi-Hung; Sankar, Raman; Cheng Chou, Fang

2015-06-01

The general picture established so far for the links between superconductivity and magnetic ordering in iron chalcogenide Fe1+y(Te1-xSex) is that the substitution of Se for Te directly drives the system from the antiferromagnetic end into the superconducting regime. Here, we report on the observation of a ferromagnetic component that developed together with the superconducting transition in Fe-excess Fe1.12Te1-xSex crystals using neutron and x-ray diffractions, resistivity, magnetic susceptibility and magnetization measurements. The superconducting transition is accompanied by a negative thermal expansion of the crystalline unit cell and an electronic charge redistribution, where a small portion of the electronic charge flows from around the Fe sites toward the Te/Se sites. First-principles calculations show consistent results, revealing that the excess Fe ions play a more significant role in affecting the magnetic property in the superconducting state than in the normal state and the occurrence of an electronic charge redistribution through the superconducting transition.

London penetration depth and superfluid density of single-crystalline Fe1+y(Te1-xSex) and Fe1+y(Te1-xSx)

NASA Astrophysics Data System (ADS)

Kim, H.; Martin, C.; Gordon, R. T.; Tanatar, M. A.; Hu, J.; Qian, B.; Mao, Z. Q.; Hu, Rongwei; Petrovic, C.; Salovich, N.; Giannetta, R.; Prozorov, R.

2010-05-01

The in-plane London penetration depth, λ(T) , was measured in single crystals of the iron-chalcogenide superconductors Fe1.03(Te0.63Se0.37) and Fe1.06(Te0.88S0.14) by using a radio-frequency tunnel diode resonator. Similar to the iron-arsenides and in stark contrast to the iron-phosphides, iron-chalcogenides exhibit a nearly quadratic temperature variation of λ(T) at low temperatures. The absolute value of the penetration depth in the T→0 limit was determined for Fe1.03(Te0.63Se0.37) by using an Al coating technique, giving λ(0)≈560±20nm . The superfluid density ρs(T)=λ2(0)/λ2(T) was fitted with a self-consistent two-gap γ model. While two different gaps are needed to describe the full-range temperature variation in ρs(T) , a nonexponential low-temperature behavior requires pair-breaking scattering, and therefore an unconventional (e.g., s± or nodal) order parameter.

Copper chalcogenide clusters stabilized with ferrocene-based diphosphine ligands.

PubMed

Khadka, Chhatra B; Najafabadi, Bahareh Khalili; Hesari, Mahdi; Workentin, Mark S; Corrigan, John F

2013-06-17

The redox-active diphosphine ligand 1,1'-bis(diphenylphosphino)ferrocene (dppf) has been used to stabilize the copper(I) chalcogenide clusters [Cu12(μ4-S)6(μ-dppf)4] (1), [Cu8(μ4-Se)4(μ-dppf)3] (2), [Cu4(μ4-Te)(μ4-η(2)-Te2)(μ-dppf)2] (3), and [Cu12(μ5-Te)4(μ8-η(2)-Te2)2(μ-dppf)4] (4), prepared by the reaction of the copper(I) acetate coordination complex (dppf)CuOAc (5) with 0.5 equiv of E(SiMe3)2 (E = S, Se, Te). Single-crystal X-ray analyses of complexes 1-4 confirm the presence of {Cu(2x)E(x)} cores stabilized by dppf ligands on their surfaces, where the bidentate ligands adopt bridging coordination modes. The redox chemistry of cluster 1 was examined using cyclic voltammetry and compared to the electrochemistry of the free ligand dppf and the corresponding copper(I) acetate coordination complex 5. Cluster 1 shows the expected consecutive oxidations of the ferrocene moieties, Cu(I) centers, and phosphine of the dppf ligand.

Analysis of the electrodeposition and surface chemistry of CdTe, CdSe, and CdS thin films through substrate-overlayer surface-enhanced Raman spectroscopy.

PubMed

Gu, Junsi; Fahrenkrug, Eli; Maldonado, Stephen

2014-09-02

The substrate-overlayer approach has been used to acquire surface enhanced Raman spectra (SERS) during and after electrochemical atomic layer deposition (ECALD) of CdSe, CdTe, and CdS thin films. The collected data suggest that SERS measurements performed with off-resonance (i.e. far from the surface plasmonic wavelength of the underlying SERS substrate) laser excitation do not introduce perturbations to the ECALD processes. Spectra acquired in this way afford rapid insight on the quality of the semiconductor film during the course of an ECALD process. For example, SERS data are used to highlight ECALD conditions that yield crystalline CdSe and CdS films. In contrast, SERS measurements with short wavelength laser excitation show evidence of photoelectrochemical effects that were not germane to the intended ECALD process. Using the semiconductor films prepared by ECALD, the substrate-overlayer SERS approach also affords analysis of semiconductor surface adsorbates. Specifically, Raman spectra of benzenethiol adsorbed onto CdSe, CdTe, and CdS films are detailed. Spectral shifts in the vibronic features of adsorbate bonding suggest subtle differences in substrate-adsorbate interactions, highlighting the sensitivity of this methodology.

Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting

NASA Astrophysics Data System (ADS)

Gharsallah, Mouna; Serrano-Sanchez, Federico; Nemes, Norbert M.; Martinez, Jose Luis; Alonso, Jose Antonio

2017-01-01

In competitive thermoelectric devices for energy conversion and generation, high-efficiency materials of both n-type and p-type are required. For this, Bi2Te3-based alloys have the best thermoelectric properties in room temperature applications. Partial replacement of tellurium by selenium is expected to introduce new donor states in the band gap, which would alter electrical conductivity and thermopower. We report on the preparation of n-type Bi2(Te1-xSex)3 solid solutions by a straightforward arc-melting technique, yielding nanostructured polycrystalline pellets. X-ray and neutron powder diffraction was used to assess Se inclusion, also indicating that the interactions between quintuple layers constituting this material are weakened upon Se doping, while the covalency of intralayer bonds is augmented. Moreover, scanning electron microscopy shows large surfaces perpendicular to the c crystallographic axis assembled as stacked sheets. Grain boundaries related to this 2D nanostructuration affect the thermal conductivity reducing it below 0.8 Wm-1K-1 at room temperature. Furthermore, Se doping increases the absolute Seebeck coefficient up to -140 μV K-1 at 400 K, which is also beneficial for improved thermoelectric efficiency.

The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru; Kudryashov, A. A.; Kytin, V. G.

2015-06-15

The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. Themore » temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.« less

Tunneling spectra and superconducting gaps observed by scanning tunneling microscopy near the grain boundaries of FeSe0.3Te0.7 films

NASA Astrophysics Data System (ADS)

Lin, K. C.; Li, Y. S.; Shen, Y. T.; Wu, M. K.; Chi, C. C.

2013-12-01

We used scanning tunneling microscopy (STM) to study the tunneling spectra of FeSe0.3Te0.7 films with two orientations of the ab-planes and a connection ramp between them. We discovered that by pulsed laser deposition (PLD) method, the a- and b-axis of the FeSe0.3Te0.7 film deposited on an Ar-ion-milled magnesium oxide (MgO) substrate were rotated 45° with respect to those of MgO, whereas the a- and b-axis of the film grown on a pristine MgO substrate were parallel to those of MgO. With photolithography and this technique, we can prepare FeSe0.3Te0.7 films with two orientations on the same MgO substrate so that the connection between them forms a ramp at an angle of about 25° to the substrate plane. In the planar region, for either the 0° or 45° orientation, we observed tunneling spectra with a superconducting gap of about 5 meV and 1.78 meV, respectively. However, a much larger gap at about 18 meV was observed in the ramp region. Furthermore, we observed a small zero-bias conductance peak (ZBCP) inside the large gap at T = 4.3 K. The ZBCP becomes smaller with increasing temperature and disappeared at temperature above 7 K.

Luminescence of polyethylene glycol coated CdSeTe/ZnS and InP/ZnS nanoparticles in the presence of copper cations.

PubMed

Beaune, Grégory; Tamang, Sudarsan; Bernardin, Aude; Bayle-Guillemaud, Pascale; Fenel, Daphna; Schoehn, Guy; Vinet, Françoise; Reiss, Peter; Texier, Isabelle

2011-08-22

The use of click chemistry for quantum dot (QD) functionalization could be very promising for the development of bioconjugates dedicated to in vivo applications. Alkyne-azide ligation usually requires copper(I) catalysis. The luminescence response of CdSeTe/ZnS nanoparticles coated with polyethylene glycol (PEG) is studied in the presence of copper cations, and compared to that of InP/ZnS QDs coated with mercaptoundecanoic acid (MUA). The quenching mechanisms appear different. Luminescence quenching occurs without any wavelength shift in the absorption and emission spectra for the CdSeTe/ZnS/PEG nanocrystals. In this case, the presence of copper in the ZnS shell is evidenced by energy-filtered transmission electron microscopy (EF-TEM). By contrast, in the case of InP/ZnS/MUA nanocrystals, a redshift of the excitation and emission spectra, accompanied by an increase in absorbance and a decrease in photoluminescence, is observed. For CdSeTe/ZnS/PEG nanocrystals, PL quenching is enhanced for QDs with 1) smaller inorganic-core diameter, 2) thinner PEG shell, and 3) hydroxyl terminal groups. Whereas copper-induced PL quenching can be interesting for the design of sensitive cation sensors, copper-free click reactions should be used for the efficient functionalization of nanocrystals dedicated to bioapplications, in order to achieve highly luminescent QD bioconjugates. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermal conductivity of bulk and nanowire Mg₂Si xSn 1–x alloys from first principles

DOE PAGES

Li, Wu; Lindsay, L.; Broido, D. A.; ...

2012-11-29

The lattice thermal conductivity (κ) of the thermoelectric materials, Mg₂Si, Mg₂Sn, and their alloys, are calculated for bulk and nanowires, without adjustable parameters. We find good agreement with bulk experimental results. For large nanowire diameters, size effects are stronger for the alloy than for the pure compounds. For example, in 200 nm diameter nanowires κ is lower than its bulk value by 30%, 20%, and 20% for Mg₂Si₀.₆Sn₀.₄, Mg₂Si, and Mg₂Sn, respectively. For nanowires less than 20 nm thick, the relative decrease surpasses 50%, and it becomes larger in the pure compounds than in the alloy. At room temperature, κmore » of Mg₂Si xSn 1–x is less sensitive to nanostructuring size effects than Si xGe 1–x, but more sensitive than PbTe xSe 1–x. This suggests that further improvement of Mg₂Si xSn 1–x as a nontoxic thermoelectric may be possible.« less

Chemical trends of the luminescence in wide band gap II 1-xMn xVI semimagnetic semiconductors

NASA Astrophysics Data System (ADS)

Benecke, C.; Busse, W.; Gumlich, H.-E.

1990-04-01

Time resolved emission and excitation spectroscopy is used to investigate the Mn correlated luminescence in wide band gap II-VI compounds, i.e. Zn 1-xMn xS, Cd 1-xMn xSe, Zn 1-xMn xTe and Cd 1-xMn xTe. Additional Information has been obtained with CdxZnyMnzTe( x+ y+ z=1) in checking the luminescence by variation of the ratio of the cations Cd and Zn. Generally speaking, at least two distinct emissions bands can be observed for each II 1- xMn xVI compound. One emissions band is attributed to the internal transition 4T 1(G)→ 6A 1(S) of the 3d 5 electron of the Mn 2+ on regular metal sites with energies of about ≈2 eV. The other emission band is found to occur in the near infrared range of about ≈1.3 eV. This emission band is tentatively interpreted as a transition of Mn 2+ ions on interstitial sites or in small Mn chalcogenide clusters, both interpretations assuming cubic symmetry. This model is supported by the existence of low energy excitation bands and by the great similarity of the shape of the two emission bands which lead to comparable Huang-Rhys factors and effective phonon energies. Also the established trend in the experimental data of the II-VI compounds under consideration confirm this interpretation. For both the IR and the yellow Mn 2+ center, the Racah parameters B and C and the crystal field parameter Dq are determined on the basis of experimental data. As a result, the energy of both the emission and the excitation bands is predominantly determined by the sorrounding anions. These bands shift to higher energies when the anions are changed in the fixed order: Te→Se→S. Regularly, there is also a spectral shift when Zn is replaced by Cd, which is smaller than the shift due to the variation of onions.

Nano-scale Stripe Structures on FeTe Observed by Low-temperature STM/STS

NASA Astrophysics Data System (ADS)

Sugimoto, A.; Ukita, R.; Ekino, T.

We have investigated the nano-scale stripe structures on a parent compound of the iron chalcogenide superconductor Fe1+dTe (d=0.033) by using low-temperature scanning tunneling microscopy (STM). The STM topographies and the dI/dV maps show clear stripe structures with the period of twice as large as the Te-Te atomic displacement (~0.76 nm = 2a0, a0 is lattice constant), in addition to weak modulation with the same period of lattice constant (~0.38 nm). The bias-voltage dependence of both STM topographies and dI/dV maps show the several kinds of the stripe structures. The 2a0 modulations are similar to the bicollinear spin order of the parent compound FeTe, indicating the possibility of the coupling with spin density wave and electronic structures.

Structural and Galvanomagnetic properties in Mn-Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Bidinakis, K.; Speliotis, Th.

2017-12-01

Bismuth-based binary chalcogenide compounds such as Bi2Te3 and Bi2Se3 are well known materials for their excellent thermoelectric properties due to their near-gap electronic structure. In the last few years these materials have received attention for exhibiting new physics of 3D topological insulators (TI). Possible applications of TI based devices range from quantum computing, spin based logic and memory to electrodynamics. The 3D TIs present spin-momentum-locked surface states by time reversal symmetry (TRS). Introducing magnetic doping in a TI, brakes the TRS and is predicted to open the gap at Dirac point, resulting in exotic quantum phenomena. This interaction between magnetism and topologically protected states is of potential attention for applications in modern spintronics. Quantum phenomena such as weak antilocalization observed in these nanostructures are described. In this work, granular Mn-Bi2Te3 thin films were grown by DC magnetron sputtering on Si(111) substrates and were submitted to ex situ annealing. We present results for the crystal structure of sputtered and annealed films characterized with X-ray diffraction and high-resolution scanning electron microscopy (HRSEM). The surface analysis was studied with atomic force microscopy (AFM). Magnetotransport measurements were performed using standard four probe technique with Hall and MR configurations, with perpendicular magnetic fields up to 9T and temperatures from 300 to 3K.

Local bonding structure of tellurium and antimony in the phase change chalcogenides germanium-antimony-tellurium: A nuclear magnetic resonance study

NASA Astrophysics Data System (ADS)

Bobela, David C.

Recent technological applications of some chalcogenide materials, compounds containing a group VI atom, have prompted studies of the local atomic structure of the amorphous phase. In the case of Ge2Sb2Te 5, metastability in the local bonding structure is responsible for its usefulness as a phase-change memory material. There is no consensus on the exact phase-change mechanism, which is partly due to the inadequacy of standard scattering techniques to probe the structure of the amorphous phase. Nuclear magnetic resonance methods, on the other hand, are well suited to study local structural order even in the absence of a periodic lattice. In this technique, structural information is encoded as an oscillating voltage caused by the nuclear spin. For the tellurium isotope, 125Te (spin = 1/2 in the ground state), the dominant interaction comes from the core and valence electrons that carry angular momentum. This interaction is helpful in identifying Te sites of different local coordination since the number of neighboring atoms should markedly change the local electronic structure. The antimony isotope 125Sb has a spin = 5/2 in the ground state and possesses an asymmetric nuclear charge. This quadrupole moment will interact with an electric field gradient at the nuclear site, which is provided by an asymmetric electron cloud surrounding the nucleus. The frequency-space spectra will reflect the strength of the interaction as well as the symmetry of the local electronic environment. This work investigates the nuclear magnetic resonance spectrum of 125Te and 125Sb in the crystalline and amorphous forms of several GexSbyTe 1-x-y compounds where 0 < (x, y) < 1. Results from the crystalline phase 125Te data show a trend in the spectral position that can be related to the tellurium bonded to three and six neighbors. In the amorphous phase, the same trend is observed, and the nuclear magnetic resonance fingerprint of two-fold and three-fold coordinated tellurium is obtained. It is concluded, based upon this comparison that the Te atoms see a dramatically different bonding environment depending on which phase the lattice has. The 125Sb data for the crystalline phase indicate electric field gradients that are consistent with similarly bonded quadrupolar nuclei, such as Sb atoms in crystalline Sb or five-fold coordinated Sb in crystalline MnSb. The NMR data exemplify the consequences of combinatorial disorder on the spectra via the absence of certain line-shape features. In the amorphous phase, the electric field gradients are approximately seven times larger, and the fingerprints of both highly-symmetric and asymmetric antimony sites emerge. Details of field gradient, i.e. the magnitude and symmetry, are remarkably similar to those found in Sb containing compounds where the Sb sites are three-fold pyramidal, such as in crystalline Sb2X3 where X = O, S, or Se. The observations from the NMR data provide a critical litmus test for recent structural models of the amorphous phase. In particular, the amorphous phase data provides clear evidence that the Te atoms are two-fold and three-fold coordinated while the Sb atoms are most likely bonded in three-fold pyramidal configurations. These observations imply a structural model of the amorphous phase that agrees best with a models based upon the "8 minus n", or "8-n" rule for chemical bonding in amorphous semiconductors. Thus, the lattice of these compounds is arranged such that the constituent elements have enough bonds, on average, to satisfy their valence requirement. The implications of the NMR data on theoretical modeling data are immediate. Theoretical models of these systems must possess some aspect of the "8-n" mentality. With this idea as a foundation for physically realistic representations of the amorphous phase, the origin of the phase-change mechanism may be unraveled, which will ultimately speed the process of compositional optimization of phase-change materials.

Assessing the anticancer compounds Se-methylselenocysteine and glucosinolates in Se-biofortified broccoli (brassica oleracea L. var. italica) sprouts and florets

USDA-ARS?s Scientific Manuscript database

Broccoli (Brassica oleracea L. var. italica) is a rich source of chemopreventive compounds. Here, we evaluated and compared the effect of selenium (Se) treatment on the accumulation of anticancer compound Se-methylselenocysteine (SeMSCys) and glucosinolates in broccoli sprouts and florets. Total Se ...

Solubility limits in quaternary SnTe-based alloys [Metastability and solubility limits in quaternary SnTe-based alloys guided by combinatorial sputtering

DOE PAGES

Siol, Sebastian; Holder, Aaron; Ortiz, Brenden R.; ...

2017-05-09

Here, the controlled decomposition of metastable alloys is an attractive route to form nanostructured thermoelectric materials with reduced thermal conductivity. The ternary SnTe–MnTe and SnTe–SnSe heterostructural alloys have been demonstrated as promising materials for thermoelectric applications. In this work, the quaternary Sn 1–yMnyTe 1–xSe x phase space serves as a relevant model system to explore how a combination of computational and combinatorial-growth methods can be used to study equilibrium and non-equilibrium solubility limits. Results from first principle calculations indicate low equilibrium solubility for x,y < 0.05 that are in good agreement with results obtained from bulk equilibrium synthesis experiments andmore » predict significantly higher spinodal limits. An experimental screening using sputtered combinatorial thin film sample libraries showed a remarkable increase in non-equilibrium solubility for x,y > 0.2. These theoretical and experimental results were used to guide the bulk synthesis of metastable alloys. The ability to reproduce the non-equilibrium solubility levels in bulk materials indicates that such theoretical calculations and combinatorial growth can inform bulk synthetic routes. Further, the large difference between equilibrium and non-equilibrium solubility limits in Sn 1–yMn yTe 1–xSe x indicates these metastable alloys are attractive in terms of nano-precipitate formation for potential thermoelectric applications.« less

75 FR 29818 - Internal Revenue Service

Federal Register 2010, 2011, 2012, 2013, 2014

2010-05-27

... DEPARTMENT OF THE TREASURY Internal Revenue Service Advisory Group to the Internal Revenue Service Tax Exempt and Government Entities Division (TE/GE); Meeting AGENCY: Internal Revenue Service (IRS..., Director, TE/GE Communications and Liaison; 1111 Constitution Ave., NW.; SE:T:CL--Penn Bldg; Washington, DC...

Solubility limits in quaternary SnTe-based alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siol, Sebastian; Holder, Aaron; Ortiz, Brenden R.

2017-01-01

A combined theoretical and experimental approach was used to determine the equilibrium as well as non-equilibrium solubility lines in the quaternary Sn 1-yMn yTe 1-xSe xalloy space, revealing a large area of accessible metastable phase space.

The relationship of metabolic syndrome and constitutional medicine for the prediction of cardiovascular disease.

PubMed

Cho, Nam H; Kim, Jong Yeol; Kim, Sung Soo; Shin, Chol

2013-01-01

The concept of Sasang Constitutional Medicine (SCM) has been in existence in Traditional Korean Medicine for more than 100 years. SCM consists of 4 different types; So-Eum (SE), So-Yang (SY), Tae-Eum (TE), and Tae-Yang (TY). In Western medicine, it is more like stratifying individuals according to phenotypic expression. It is of great importance that the Sasang constitution type be evaluated accurately and recognized by the medical communities for prevention, early diagnosis and treatment of cardiovascular diseases (CVD). From the Ansung-Ansan prospective cohort study, 10,038 participants were recruited from years 2001-2002. Of 10,038 original participants, 3022 subjects underwent Sasang Constitutional Type (SCT) evaluation. The Cox proportional hazard model was used to predict CVD during the ten year follow-up period. Of 3022 participants, SCT classified into 364 (12%) SE, 1053 (34.8%) SY, 1605 (53.1%) TE, and no TY. Three hundred seventy nine (16%) newly developed CVD during the following period, yielding 10-year cumulative incidence of 160/1000 person. The frequency of CVD within three SCT without metabolic syndrome (MetS) shows 13.4% in SE, 13.6% in SY, and 14.3% in TE, respectively (p=NS). The CVD events were significantly different among the types when MetS was present. The demographic and clinical characteristics revealed the TE group was significantly older, more obese, higher blood pressure, glucose values, and lipid profiles levels. The frequency of MetS and type 2 diabetes mellitus (T2DM) was also higher in TE type than either SE and SY types (all p<0.001). The Cox proportional hazard analysis revealed age, female gender, rural residence, higher ALT level, and lower beta-cell function remain as an independent risk factor, as well as SY with MetS (RR=1.838 (95% CI 1.23-2.74), p=0.003). Furthermore, 10 year CVD survival rate was 86.4% in no MetS group, 83.4% in TE, 79.6% in SE, and 76.4% in SY all with MetS (p<0.001). The findings from this study suggest MetS increases risk for CVD in certain physical conditions like SY type. Therefore, we would like to suggest that SCT is a strong indicator for CVD. Copyright © 2013 Diabetes India. Published by Elsevier Ltd. All rights reserved.

Digestive system-related pathophysiological symptoms of Sasang typology: Systematic review.

PubMed

Lee, Mi Suk; Sohn, Kyungwoo; Kim, Yun Hee; Hwang, Min-Woo; Kwon, Young Kyu; Bae, Na Young; Chae, Han

2013-06-01

The purpose of this study was to review clinical studies on digestive system-related pathophysiological symptoms of each Sasang type to obtain the generalizable typespecific clinical features, which are important for the diagnosis of the Sasang type and subsequent disease treatment. Sasang typology and digestive system symptom-related keywords were used to search through eight domestic and foreign databases up to March 2012. The results were organized and analyzed based on four categories [digestive function, appetite, eating pattern, and body mass index (BMI)] to elucidate type-specific symptoms. Sasang type-specific digestive system-related symptoms were identified by reviewing 30 related articles that were gathered by searching through the databases. The Tae-Eum (TE) type had the highest digestive functions and the So-Eum (SE) type had the lowest. The TE type appeared to have larger volume with fast eating speed compared with the SE type and individuals in the TE category preferred fatty or salty food, which is responsible for the high occurrence rates of organic digestive diseases such as gastritis. Moreover, BMI was higher in the TE type and lower in the SE type. We systematically reviewed previously published clinical reports on digestive functions, which can be used to meet the objective of Sasang-type differentiation and pathophysiological pattern identification.