Ab-initio calculation of EuO doped with 5% of (Ti, V, Cr and Fe): GGA and SIC approximation

NASA Astrophysics Data System (ADS)

Rouchdi, M.; Salmani, E.; Bekkioui, N.; Ez-Zahraouy, H.; Hassanain, N.; Benyoussef, A.; Mzerd, A.

2017-12-01

In this research, a simple theoretical method is proposed to investigate the electronic, magnetic and optical properties of Europium oxide (EuO) doped with 5% of (Ti, V, Cr and Fe). For a basic understanding of these properties, we employed Density-Functional Theory (DFT) based calculations with the Korringa-Kohn-Rostoker code (KKR) combined with the Coherent Potential Approximation (CPA). Also we investigated the half-metallic ferromagnetic behavior of EuO doped with 5% of (Ti, V, Cr and Fe) within the self-interaction-corrected Generalized Gradient Approximation (GGA-SIC). Our calculated results revealed that the Eu0.95TM0.05O is ferromagnetic with a high transition temperature. Moreover, the optical absorption spectra revealed that the half metallicity has been also predicted.

Mott Transition of MnO under Pressure: A Comparison of Correlated Band Theories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasinathan, Deepa; Kunes, Jan; Koepernik, K

The electronic structure, magnetic moment, and volume collapse of MnO under pressure are obtained from four different correlated band theory methods; local density approximation+Hubbard U (LDA+U), pseudopotential self-interaction correction (pseudo-SIC), the hybrid functional (combined local exchange plus Hartree-Fock exchange), and the local spin density SIC (SIC-LSD) method. Each method treats correlation among the five Mn 3d orbitals (per spin), including their hybridization with three O 2p orbitals in the valence bands and their changes with pressure. The focus is on comparison of the methods for rock salt MnO (neglecting the observed transition to the NiAs structure in the 90-100 GPamore » range). Each method predicts a first-order volume collapse, but with variation in the predicted volume and critical pressure. Accompanying the volume collapse is a moment collapse, which for all methods is from high-spin to low-spin ((5/2){yields}(1/2)), not to nonmagnetic as the simplest scenario would have. The specific manner in which the transition occurs varies considerably among the methods: pseudo-SIC and SIC-LSD give insulator-to-metal, while LDA+U gives insulator-to-insulator and the hybrid method gives an insulator-to-semimetal transition. Projected densities of states above and below the transition are presented for each of the methods and used to analyze the character of each transition. In some cases the rhombohedral symmetry of the antiferromagnetically ordered phase clearly influences the character of the transition.« less

Similar interaction chromatography of proteins: A cross interaction chromatographic approach to estimate the osmotic second virial coefficient.

PubMed

Quigley, A; Williams, D R

2016-08-12

Self-interaction chromatography (SIC) has established itself as an important experimental technique for the measurement of the second osmotic virial coefficients B22. B22 data are critical for understanding a range of protein solution phenomena, particularly aggregation and crystallisation. A key limitation to the more extensive use of SIC is the need to develop a method for immobilising each specific protein of interest onto a chromatographic support. This requirement is both a time and protein consuming constraint, which means that SIC cannot be used as a high throughput method for screening a wide range of proteins and their variants. Here an experimental framework is presented for estimating B22 values using Similar Interaction Chromatography (SimIC). This work uses experimental B23 and B32 data for lysozyme, lactoferrin, catalase and concanavalin A to reliably estimate B22 using arithmetic mean field approximations and is demonstrated to give good agreement with SIC measurements of B22 for the same proteins. SimIC could form the basis of a rapid protein variant screening methods to assess the developability of protein therapeutic candidates for industrial and academic researchers with respect to aggregation behaviour by eluting target proteins through a series of well-characterised protein immobilized reference columns. Copyright © 2016. Published by Elsevier B.V.

Effect of van der Waals interactions on the stability of SiC polytypes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawanishi, Sakiko, E-mail: s-kawa@tagen.tohoku.ac.jp; Mizoguchi, Teruyasu

2016-05-07

Density functional theory calculations with a correction of the long-range dispersion force, namely, the van der Waals (vdW) force, are performed for SiC polytypes. The lattice parameters are in good agreement with those obtained from the experiments. Furthermore, the stability of the polytypes in the experiments, which show 3C-SiC as the most stable, is reproduced by the present calculations. The effects of the vdW force on the electronic structure and the stability of polytypes are discussed. We observe that the vdW interaction is more sensitive to the cubic site than the hexagonal site. Thus, the influence of the vdW forcemore » increases with decreasing the hexagonality of the polytype, which results in the confirmation that the most stable polytype is 3C-SiC.« less

A Review of Surgical Informed Consent: Past, Present, and Future. A Quest to Help Patients Make Better Decisions

PubMed Central

Keulers, Bram J.; Scheltinga, Marc R. M.; Spauwen, Paul H. M.; van der Wilt, Gert-Jan

2010-01-01

Background Informed consent (IC) is a process requiring a competent doctor, adequate transfer of information, and consent of the patient. It is not just a signature on a piece of paper. Current consent processes in surgery are probably outdated and may require major changes to adjust them to modern day legislation. A literature search may provide an opportunity for enhancing the quality of the surgical IC (SIC) process. Methods Relevant English literature obtained from PubMed, Picarta, PsycINFO, and Google between 1993 and 2009 was reviewed. Results The body of literature with respect to SIC is slim and of moderate quality. The SIC process is an underestimated part of surgery and neither surgeons nor patients sufficiently realize its importance. Surgeons are not specifically trained and lack the competence to guide patients through a legally correct SIC process. Computerized programs can support the SIC process significantly but are rarely used for this purpose. Conclusions IC should be integrated into our surgical practice. Unfortunately, a big gap exists between the theoretical/legal best practice and the daily practice of IC. An optimally informed patient will have more realistic expectations regarding a surgical procedure and its associated risks. Well-informed patients will be more satisfied and file fewer legal claims. The use of interactive computer-based programs provides opportunities to improve the SIC process. PMID:20372902

Exploration of dynamical regimes of irradiated small protonated water clusters

NASA Astrophysics Data System (ADS)

Ndongmouo Taffoti, U. F.; Dinh, P. M.; Reinhard, P.-G.; Suraud, E.; Wang, Z. P.

2010-05-01

We explore from a theoretical perspective the dynamical response of small water clusters, (H2O)nH3O+ with n=1,2,3, to a short laser pulse for various frequencies, from infrared (IR) to ultra-violet (UV) and intensities (from 6×10^{13} W/cm^2 to 5×10^{14} W/cm^2). To that end, we use time-dependent local-density approximation for the electrons, coupled to molecular dynamics for the atomic cores (TDLDA-MD). The local-density approximation is augmented by a self-interaction correction (SIC) to allow for a correct description of electron emission. For IR frequencies, we see a direct coupling of the laser field to the very light H+ ions in the clusters. Resonant coupling (in the UV) and/or higher intensities lead to fast ionization with subsequent Coulomb explosion. The stability against Coulomb pressure increases with system size. Excitation to lower ionization stages induced strong ionic vibrations. The latter maintain a rather harmonic pattern in spite of the sizeable amplitudes (often 10% of the bond length).

Wear-triggered self-healing behavior on the surface of nanocrystalline nickel aluminum bronze/Ti3SiC2 composites

NASA Astrophysics Data System (ADS)

Zhai, Wenzheng; Lu, Wenlong; Zhang, Po; Wang, Jian; Liu, Xiaojun; Zhou, Liping

2018-04-01

Self-healing can protect materials from diverse damages, but is intrinsically difficult in metals. This paper demonstrates a potential method through a simultaneous decomposition and oxidation of Ti3SiC2 to achieve healing of stress cracking on the surface of nickel aluminum bronze (NAB)/Ti3SiC2 nanocrystalline composites during fretting wear. At the finest nanocrystalline materials, a crack recovery would be attained at 76.5%. The repetitive fretting wear leads to a modest amount of 'flowability' of Ti3SiC2 toward the crack, facilitating crack recovery. Along with the wear-triggered self-healing, the NAB/Ti3SiC2 shows an improved tribological performance with the stable decreased friction torque due to the formation of lubrication TiO2 oxide.

Effect of Spin-Orbit Coupling on the Actinide Dioxides AnO2 (An=Th, Pa, U, Np, Pu, and Am): A Screened Hybrid Density Functional Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Xiaodong; Martin, Richard L.; Roy, Lindsay E.

2012-10-21

We present a systematic comparison of the lattice structures, electronic density of states, and band gaps of actinide dioxides, AnO₂ (An=Th, Pa, U, Np, Pu, and Am) predicted by the Heyd-Scuseria-Ernzerhof screened hybrid density functional (HSE) with the self-consistent inclusion of spin-orbit coupling(SOC). The computed HSE lattice constants and band gaps of AnO₂ are in consistently good agreement with the available experimental data across the series, and differ little from earlier HSE results without SOC. ThO₂ is a simple band insulator (f⁰), while PaO₂, UO₂, and NpO₂ are predicted to be Mott insulators. The remainders (PuO₂ and AmO₂) show considerablemore » O2p/An5f mixing and are classified as charge-transfer insulators. We also compare our results for UO₂, NpO₂, and PuO₂with the PBE+U, self interaction correction (SIC), and dynamic mean-field theory (DMFT) many-body approximations.« less

The Social Interactive Coding System (SICS): An On-Line, Clinically Relevant Descriptive Tool.

ERIC Educational Resources Information Center

Rice, Mabel L.; And Others

1990-01-01

The Social Interactive Coding System (SICS) assesses the continuous verbal interactions of preschool children as a function of play areas, addressees, script codes, and play levels. This paper describes the 26 subjects and the setting involved in SICS development, coding definitions and procedures, training procedures, reliability, sample…

Direct growth of freestanding GaN on C-face SiC by HVPE.

PubMed

Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

2015-06-02

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.

Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

PubMed

Wang, Lu; Wang, Qiang; Huang, Jianmei; Li, Wei-Qi; Chen, Guang-Hui; Yang, Yanhui

2017-10-11

It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided insight into the growth of epitaxial graphene on TiC(111)/SiC(0001[combining macron]) substrates and the design of graphene/TiC/SiC-based electronic devices.

Structural and electronic properties of CdS/ZnS core/shell nanowires: A first-principles study

NASA Astrophysics Data System (ADS)

Kim, Hyo Seok; Kim, Yong-Hoon

2015-03-01

Carrying out density functional theory (DFT) calculation, we studied the relative effects of quantum confinement and strain on the electronic structures of II-IV semiconductor compounds with a large lattice-mismatch, CdS and ZnS, in the core/shell nanowire geometry. We considered different core radii and shell thickness of the CdS/ZnS core/shell nanowire, different surface facets, and various defects in the core/shell interface and surface regions. To properly describe the band level alignment at the core/shell boundary, we adopted the self-interaction correction (SIC)-DFT scheme. Implications of our findings in the context of device applications will be also discussed. This work was supported by the Basic Science Research Grant (No. 2012R1A1A2044793), Global Frontier Program (No. 2013-073298), and Nano-Material Technology Development Program (2012M3A7B4049888) of the National Research Foundation funded by the Ministry of Education, Science and Technology of Korea. Corresponding author

Computational Modeling of Radiation Phenomenon in SiC for Nuclear Applications

NASA Astrophysics Data System (ADS)

Ko, Hyunseok

Silicon carbide (SiC) material has been investigated for promising nuclear materials owing to its superior thermo-mechanical properties, and low neutron cross-section. While the interest in SiC has been increasing, the lack of fundamental understanding in many radiation phenomena is an important issue. More specifically, these phenomena in SiC include the fission gas transport, radiation induced defects and its evolution, radiation effects on the mechanical stability, matrix brittleness of SiC composites, and low thermal conductivities of SiC composites. To better design SiC and SiC composite materials for various nuclear applications, understanding each phenomenon and its significance under specific reactor conditions is important. In this thesis, we used various modeling approaches to understand the fundamental radiation phenomena in SiC for nuclear applications in three aspects: (a) fission product diffusion through SiC, (b) optimization of thermodynamic stable self-interstitial atom clusters, (c) interface effect in SiC composite and their change upon radiation. In (a) fission product transport work, we proposed that Ag/Cs diffusion in high energy grain boundaries may be the upper boundary in unirradiated SiC at relevant temperature, and radiation enhanced diffusion is responsible for fast diffusion measured in post-irradiated fuel particles. For (b) the self-interstitial cluster work, thermodynamically stable clusters are identified as a function of cluster size, shape, and compositions using a genetic algorithm. We found that there are compositional and configurational transitions for stable clusters as the cluster size increases. For (c) the interface effect in SiC composite, we investigated recently proposed interface, which is CNT reinforced SiC composite. The analytical model suggests that CNT/SiC composites have attractive mechanical and thermal properties, and these fortify the argument that SiC composites are good candidate materials for the cladding. We used grand canonical monte carlo to optimize the interface, as a part of the stepping stone for further study using the interface.

Full self-consistency in the Fermi-orbital self-interaction correction

NASA Astrophysics Data System (ADS)

Yang, Zeng-hui; Pederson, Mark R.; Perdew, John P.

2017-05-01

The Perdew-Zunger self-interaction correction cures many common problems associated with semilocal density functionals, but suffers from a size-extensivity problem when Kohn-Sham orbitals are used in the correction. Fermi-Löwdin-orbital self-interaction correction (FLOSIC) solves the size-extensivity problem, allowing its use in periodic systems and resulting in better accuracy in finite systems. Although the previously published FLOSIC algorithm Pederson et al., J. Chem. Phys. 140, 121103 (2014)., 10.1063/1.4869581 appears to work well in many cases, it is not fully self-consistent. This would be particularly problematic for systems where the occupied manifold is strongly changed by the correction. In this paper, we demonstrate a different algorithm for FLOSIC to achieve full self-consistency with only marginal increase of computational cost. The resulting total energies are found to be lower than previously reported non-self-consistent results.

Correction of a Space Telescope Active Primary Mirror Using Adaptive Optics in a Woofer-Tweeter Configuration

DTIC Science & Technology

2015-09-01

shows the elements of an AHM. The substrate is a rib-stiffened silicon carbide ( SiC ) structure cast to meet the required optical figure. The...right) 2. SMT Three Point Linearity Test The active mirror under study is a 1-meter hexagonal SiC AHM mirror with 156 face sheet actuators. The...CORRECTION OF A SPACE TELESCOPE ACTIVE PRIMARY MIRROR USING ADAPTIVE OPTICS IN A WOOFER-TWEETER CONFIGURATION by Matthew R. Allen September 2015

Elevated-temperature fracture resistances of monolithic and composite ceramics using chevron-notched bend tests

NASA Technical Reports Server (NTRS)

Ghosh, Asish; Jenkins, Michael G.; Ferber, Mattison K.; Peussa, Jouko; Salem, Jonathan A.

1992-01-01

The quasi-static fracture behaviors of monolithic ceramics (SiC, Si3N4, MgAl2O4), self-reinforced monoliths (acicular grained Si3N4, acicular grained mullite), and ceramic matrix composites (SiC whisker/Al2O3 matrix, TiB2 particulate/SiC matrix, SiC fiber/CVI SiC matrix, Al2O3 fiber/CVI SiC matrix) were measured over the temperature range of 20 to 1400 C. The chevron notched, bend bar test geometry was essential for characterizing the elevated temperature fracture resistances of this wide range of quasi-brittle materials during stable crack growth. Fractography revealed the differences in the fracture behavior of the different materials at the various temperatures. The fracture resistances of the self-reinforced monoliths were comparable to those of the composites and the fracture mechanisms were found to be similar at room temperature. However at elevated temperatures the differences of the fracture behavior became apparent where the superior fracture resistance of the self-reinforced monoliths were attributed to the minor amounts of glassy, intergranular phases which were often more abundant in the composites and affected the fracture behavior when softened by elevated temperatures.

The optimized effective potential and the self-interaction correction in density functional theory: Application to molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garza, Jorge; Nichols, Jeffrey A.; Dixon, David A.

2000-05-08

The Krieger, Li, and Iafrate approximation to the optimized effective potential including the self-interaction correction for density functional theory has been implemented in a molecular code, NWChem, that uses Gaussian functions to represent the Kohn and Sham spin-orbitals. The differences between the implementation of the self-interaction correction in codes where planewaves are used with an optimized effective potential are discussed. The importance of the localization of the spin-orbitals to maximize the exchange-correlation of the self-interaction correction is discussed. We carried out exchange-only calculations to compare the results obtained with these approximations, and those obtained with the local spin density approximation,more » the generalized gradient approximation and Hartree-Fock theory. Interesting results for the energy difference (GAP) between the highest occupied molecular orbital, HOMO, and the lowest unoccupied molecular orbital, LUMO, (spin-orbital energies of closed shell atoms and molecules) using the optimized effective potential and the self-interaction correction have been obtained. The effect of the diffuse character of the basis set on the HOMO and LUMO eigenvalues at the various levels is discussed. Total energies obtained with the optimized effective potential and the self-interaction correction show that the exchange energy with these approximations is overestimated and this will be an important topic for future work. (c) 2000 American Institute of Physics.« less

Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

NASA Astrophysics Data System (ADS)

Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

2016-01-01

Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

Relaxations of fluorouracil tautomers by decorations of fullerene-like SiCs: DFT studies

NASA Astrophysics Data System (ADS)

Kouchaki, Alireza; Gülseren, Oğuz; Hadipour, Nasser; Mirzaei, Mahmoud

2016-06-01

Decorations of silicon carbide (SiC) fullerene-like nanoparticles by fluorouracil (FU) and its tautomers are investigated through density functional theory (DFT) calculations. Two models of fullerene-like particles including Si12C8 and Si8C12 are constructed to be counterparts of decorated hybrid structures, FU@Si12C8 and FU@Si8C12, respectively. The initial models including original FU and tautomeric structures and SiC nanoparticles are individually optimized and then combined for further optimizations in the hybrid forms. Covalent bonds are observed for FU@Si12C8 hybrids, whereas non-covalent interactions are seen for FU@Si8C12 ones. The obtained properties indicated that Si12C8 model could be considered as a better counterpart for interactions with FU structures than Si8C12 model. The results also showed significant effects of interactions on the properties of atoms close to the interacting regions in nanoparticles. Finally, the tautomeric structures show different behaviors in interactions with SiC nanoparticles, in which the SiC nanoparticles could be employed to detect the situations of tautomeric processes for FU structures.

Interaction mechanisms between ceramic particles and atomized metallic droplets

NASA Astrophysics Data System (ADS)

Wu, Yue; Lavernia, Enrique J.

1992-10-01

The present study was undertaken to provide insight into the dynamic interactions that occur when ceramic particles are placed in intimate contact with a metallic matrix undergoing a phase change. To that effect, Al-4 wt pct Si/SiCp composite droplets were synthesized using a spray atomization and coinjection approach, and their solidification microstructures were studied both qualitatively and quantitatively. The present results show that SiC particles (SiCp) were incor- porated into the matrix and that the extent of incorporation depends on the solidification con- dition of the droplets at the moment of SiC particle injection. Two factors were found to affect the distribution and volume fraction of SiC particles in droplets: the penetration of particles into droplets and the entrapment and/or rejection of particles by the solidification front. First, during coinjection, particles collide with the atomized droplets with three possible results: they may penetrate the droplets, adhere to the droplet surface, or bounce back after impact. The extent of penetration of SiC particles into droplets was noted to depend on the kinetic energy of the particles and the magnitude of the surface energy change in the droplets that occurs upon impact. In liquid droplets, the extent of penetration of SiC particles was shown to depend on the changes in surface energy, ΔEs, experienced by the droplets. Accordingly, large SiC particles encoun- tered more resistance to penetration relative to small ones. In solid droplets, the penetration of SiC particles was correlated with the dynamic pressure exerted by the SiC particles on the droplets during impact and the depth of the ensuing crater. The results showed that no pene- tration was possible in such droplets. Second, once SiC particles have penetrated droplets, their final location in the microstructure is governed by their interactions with the solidification front. As a result of these interactions, both entrapment and rejection of SiC particles occurred during droplet solidification. A comparison of the present results to those anticipated from well-established kinetic and thermodynamic models led to some interesting findings. First, the models proposed by Boiling and Cisse[24] and Chernov et al.[58] predict relative low critical interface velocities necessary for entrapment, inconsistent with the present experimental findings. Second, although the observed correlation between the critical front velocity and droplet diameter was generally consistent with that predicted by Stefanescu et a/.’s model,[27] the dependence on the size of SiC particles was not. In view of this discrepancy, three possible mechanisms were proposed to account for the experimental findings: nucleation of α-Al on SiC particles, entrapment of SiC particles between primary dendrite arms, and entrapment of SiC particles between secondary dendrite arms.

"Life after Prison." Successful Community Reintegration Programs Reduce Recidivism in Illinois.

ERIC Educational Resources Information Center

Black, Hartzel L.; And Others

The Southeastern Illinois College Correctional Educational Division (SIC-CED) begins its involvement at the offender's entry into the correctional institution and continues through the community networking system upon his or her release from the Illinois Department of Corrections. Funding has been awarded for development and implementation of the…

First-Principles Investigation of Radiation Induced Defects in SiC and Si.

NASA Astrophysics Data System (ADS)

Windl, Wolfgang; Lenosky, Thomas J.; Kress, Joel D.; Voter, Arthur F.

1997-03-01

SiC shows promise as a structural material for fusion reactors, partly because of its low activation under neutron irradiation. This radiation, however, can cause damage to its crystal structure, thereby degrading its properties. The focus of this work is the understanding of this neutron-induced radiation damage to SiC. Neutrons interact with matter primarily by scattering off nuclei, an event which suddenly imparts energy and momentum to an atom. If enough energy is transferred, this scattering event creates structural damage, such as displacement of the impacted atom from its original position to an interstitial site. We performed quantum molecular dynamics simulations to determine the displacement energy threshold, i.e., the minimum energy transfer required to create damage. To do this, we used the self-consistent Demkov-Ortega-Grumbach-Sankey (DOGS) extension(A. A. Demkov et al.), Phys. Rev. B 52, 1618 (1995). of the Harris-functional local orbital LDA method of Sankey et al. In order to benchmark the quality of our methodology for studying radiation damage, we compare our results to those of calculations employing classical interatomic potentials; furthermore, we performed similar simulations for Si, where experimental data exist.

Method for Providing Semiconductors Having Self-Aligned Ion Implant

NASA Technical Reports Server (NTRS)

Neudeck, Philip G. (Inventor)

2014-01-01

A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500.degree. C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters.

Method for Providing Semiconductors Having Self-Aligned Ion Implant

NASA Technical Reports Server (NTRS)

Neudeck, Philip G. (Inventor)

2011-01-01

A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500.degree. C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters.

Effect of Ti3SiC2 on Tribological Properties of M50 Matrix Self-Lubricating Composites from 25 to 450 °C

NASA Astrophysics Data System (ADS)

Deng, Xiaobin; Shi, Xiaoliang; Liu, Xiyao; Huang, Yuchun; Yan, Zhao; Yang, Kang; Wang, Yufu

2017-09-01

The tribological performance is a key factor for M50 steel that is widely used in aero-engine main-shaft bearings. In this study, the tribological properties of M50 matrix self-lubricating composites with different contents of Ti3SiC2 against Si3N4 ceramic counterpart are investigated at 15 N-0.2 m/s from 25 to 450 °C. The results showed that M50 with 10 wt.% Ti3SiC2 (MT10) exhibits the lower friction coefficients (0.21-0.78) and less wear rates (1.78-3.14 × 10-6 mm3 N-1 m-1) at 25-450 °C. Especially at 350 °C, MT10 shows the lowest friction coefficient and wear rate owing to the formation of smooth lubricating layer containing Ti3SiC2 and oxides. Ti3SiC2 and compacted Ti-Si-oxides are uniformly distributed in the lubricating layer, which can well improve the anti-friction and anti-wear performance of MT10. The mechanically mixed layer containing massive Ti3SiC2 can sustain the lubricating layer, resulting in the increase of anti-wear performance of MT10. MT10 could be applied under the practical conditions of friction and wear for its outstanding anti-friction and anti-wear performance.

PhySIC_IST: cleaning source trees to infer more informative supertrees

PubMed Central

Scornavacca, Celine; Berry, Vincent; Lefort, Vincent; Douzery, Emmanuel JP; Ranwez, Vincent

2008-01-01

Background Supertree methods combine phylogenies with overlapping sets of taxa into a larger one. Topological conflicts frequently arise among source trees for methodological or biological reasons, such as long branch attraction, lateral gene transfers, gene duplication/loss or deep gene coalescence. When topological conflicts occur among source trees, liberal methods infer supertrees containing the most frequent alternative, while veto methods infer supertrees not contradicting any source tree, i.e. discard all conflicting resolutions. When the source trees host a significant number of topological conflicts or have a small taxon overlap, supertree methods of both kinds can propose poorly resolved, hence uninformative, supertrees. Results To overcome this problem, we propose to infer non-plenary supertrees, i.e. supertrees that do not necessarily contain all the taxa present in the source trees, discarding those whose position greatly differs among source trees or for which insufficient information is provided. We detail a variant of the PhySIC veto method called PhySIC_IST that can infer non-plenary supertrees. PhySIC_IST aims at inferring supertrees that satisfy the same appealing theoretical properties as with PhySIC, while being as informative as possible under this constraint. The informativeness of a supertree is estimated using a variation of the CIC (Cladistic Information Content) criterion, that takes into account both the presence of multifurcations and the absence of some taxa. Additionally, we propose a statistical preprocessing step called STC (Source Trees Correction) to correct the source trees prior to the supertree inference. STC is a liberal step that removes the parts of each source tree that significantly conflict with other source trees. Combining STC with a veto method allows an explicit trade-off between veto and liberal approaches, tuned by a single parameter. Performing large-scale simulations, we observe that STC+PhySIC_IST infers much more informative supertrees than PhySIC, while preserving low type I error compared to the well-known MRP method. Two biological case studies on animals confirm that the STC preprocess successfully detects anomalies in the source trees while STC+PhySIC_IST provides well-resolved supertrees agreeing with current knowledge in systematics. Conclusion The paper introduces and tests two new methodologies, PhySIC_IST and STC, that demonstrate the interest in inferring non-plenary supertrees as well as preprocessing the source trees. An implementation of the methods is available at: . PMID:18834542

PhySIC_IST: cleaning source trees to infer more informative supertrees.

PubMed

Scornavacca, Celine; Berry, Vincent; Lefort, Vincent; Douzery, Emmanuel J P; Ranwez, Vincent

2008-10-04

Supertree methods combine phylogenies with overlapping sets of taxa into a larger one. Topological conflicts frequently arise among source trees for methodological or biological reasons, such as long branch attraction, lateral gene transfers, gene duplication/loss or deep gene coalescence. When topological conflicts occur among source trees, liberal methods infer supertrees containing the most frequent alternative, while veto methods infer supertrees not contradicting any source tree, i.e. discard all conflicting resolutions. When the source trees host a significant number of topological conflicts or have a small taxon overlap, supertree methods of both kinds can propose poorly resolved, hence uninformative, supertrees. To overcome this problem, we propose to infer non-plenary supertrees, i.e. supertrees that do not necessarily contain all the taxa present in the source trees, discarding those whose position greatly differs among source trees or for which insufficient information is provided. We detail a variant of the PhySIC veto method called PhySIC_IST that can infer non-plenary supertrees. PhySIC_IST aims at inferring supertrees that satisfy the same appealing theoretical properties as with PhySIC, while being as informative as possible under this constraint. The informativeness of a supertree is estimated using a variation of the CIC (Cladistic Information Content) criterion, that takes into account both the presence of multifurcations and the absence of some taxa. Additionally, we propose a statistical preprocessing step called STC (Source Trees Correction) to correct the source trees prior to the supertree inference. STC is a liberal step that removes the parts of each source tree that significantly conflict with other source trees. Combining STC with a veto method allows an explicit trade-off between veto and liberal approaches, tuned by a single parameter.Performing large-scale simulations, we observe that STC+PhySIC_IST infers much more informative supertrees than PhySIC, while preserving low type I error compared to the well-known MRP method. Two biological case studies on animals confirm that the STC preprocess successfully detects anomalies in the source trees while STC+PhySIC_IST provides well-resolved supertrees agreeing with current knowledge in systematics. The paper introduces and tests two new methodologies, PhySIC_IST and STC, that demonstrate the interest in inferring non-plenary supertrees as well as preprocessing the source trees. An implementation of the methods is available at: http://www.atgc-montpellier.fr/physic_ist/.

Computational materials design of attractive Fermion system with large negative effective Ueff in the hole-doped Delafossite of CuAlO2, AgAlO2 and AuAlO2: Charge-excitation induced Ueff < 0

NASA Astrophysics Data System (ADS)

Nakanishi, A.; Fukushima, T.; Uede, H.; Katayama-Yoshida, H.

2015-12-01

On the basis of general design rules for negative effective U(Ueff) systems by controlling purely-electronic and attractive Fermion mechanisms, we perform computational materials design (CMD®) for the negative Ueff system in hole-doped two-dimensional (2D) Delafossite CuAlO2, AgAlO2 and AuAlO2 by ab initio calculations with local density approximation (LDA) and self-interaction corrected-LDA (SIC-LDA). It is found that the large negative Ueff in the hole-doped attractive Fermion systems for CuAlO2 (UeffLDA = - 4.53 eV and UeffSIC-LDA = - 4.20 eV), AgAlO2 (UeffLDA = - 4.88 eV and UeffSIC-LDA = - 4.55 eV) and AuAlO2 (UeffLDA = - 4.14 eV and UeffSIC-LDA = - 3.55 eV). These values are 10 times larger than that in hole-doped three-dimensional (3D) CuFeS2 (Ueff = - 0.44 eV). For future calculations of Tc and phase diagram by quantum Monte Carlo simulations, we propose the negative Ueff Hubbard model with the anti-bonding single π-band model for CuAlO2, AgAlO2 and AuAlO2 using the mapped parameters obtained from ab initio electronic structure calculations. Based on the theory of negative Ueff Hubbard model (Noziéres and Schmitt-Rink, 1985), we discuss |Ueff| dependence of superconducting critical temperature (Tc) in the 2D Delafossite of CuAlO2, AgAlO2 and AuAlO2 and 3D Chalcopyrite of CuFeS2, which shows the interesting chemical trend, i.e., Tc increases exponentially (Tc ∝ exp [ - 1 / | Ueff | ]) in the weak coupling regime | Ueff(- 0.44 eV) | < W(∼ 2 eV) (where W is the band width of the negative Ueff Hubbard model) for the hole-doped CuFeS2, and then Tc goes through a maximum when | Ueff(- 4.88 eV , - 4.14 eV) | ∼ W(2.8 eV , 3.5 eV) for the hole-doped AgAlO2 and AuAlO2, and finally Tc decreases with increasing |Ueff| in the strong coupling regime, where | Ueff(- 4.53 eV) | > W(1.7 eV) , for the hole-doped CuAlO2.

77 FR 55515 - Self-Regulatory Organizations; Chicago Board Options Exchange, Incorporated; Notice of Filing and...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-09-10

.... See pages 19 [sic] and 20 [sic] to Exhibit 5. Customer, Professional Customer and Voluntary Professional Customer: $0.80 per contract for customer, professional customer and voluntary professional customer transactions.\\6\\ The Exchange notes that the customer, professional customer and voluntary...

Tribological Performance of Ni3Al Matrix Self-Lubricating Composites Containing Multilayer Graphene and Ti3SiC2 at Elevated Temperatures

NASA Astrophysics Data System (ADS)

Yan, Zhao; Shi, Xiaoliang; Huang, Yuchun; Deng, Xiaobin; Yang, Kang; Liu, Xiyao

2017-09-01

The application of Ni3Al-based alloy (NA) in the field of aerospace was limited by its poor tribological properties. For improving the tribological performance of NA, multilayer graphene (MLG) and Ti3SiC2 were added in Ni3Al matrix composites. Tribological behavior of Ni3Al matrix composites containing 1.5 wt.% MLG and 10 wt.% Ti3SiC2 (NMT) against Si3N4 ball at 12 N-0.2 m/s from 25 to 750 °C was investigated. The results showed that NMT exhibited the excellent tribological behavior [lower friction coefficients (0.26-0.57) and less wear resistance (3.1-6.5 × 10-6 mm3 N-1 m-1)] due to synergetic effect of MLG and Ti3SiC2 over a wide temperature range from 25 to 750 °C. At 25-350 °C, part of MLG enriched on worn surface could play a role in reducing friction and improving wear resistance. At 350-550 °C, although MLG gradually lost the lubricating properties, the partial decomposition of Ti3SiC2 could continually improve the tribological properties of NMT. At 550-750 °C, Ti3SiC2 on worn surface was oxidized to form lubricating film, while Ti3SiC2 in the subsurface played an important role in supporting the film, resulting in the excellent high-temperature tribological performance. The research had good guiding significance for the preparation of wide temperature range self-lubricating material and the study of synergetic effect of complex solid lubricants.

Applications of Fermi-Lowdin-Orbital Self-Interaction Correction Scheme to Organic Systems

NASA Astrophysics Data System (ADS)

Baruah, Tunna; Kao, Der-You; Yamamoto, Yoh

Recent progress in treating the self-interaction errors by means of local, Lowdin-orthogonalized Fermi Orbitals offers a promising route to study the effect of self-interaction errors in the electronic structure of molecules. The Fermi orbitals depend on the location of the electronic positions, called as Fermi orbital descriptors. One advantage of using the Fermi orbitals is that the corrected Hamiltonian is unitarily invariant. Minimization of the corrected energies leads to an optimized set of centroid positions. Here we discuss the applications of this method to various systems from constituent atoms to several medium size molecules such as Mg-porphyrin, C60, pentacene etc. The applications to the ionic systems will also be discussed. De-SC0002168, NSF-DMR 125302.

Fermi orbital self-interaction corrected electronic structure of molecules beyond local density approximation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hahn, T., E-mail: torsten.hahn@physik.tu-freiberg.de; Liebing, S.; Kortus, J.

2015-12-14

The correction of the self-interaction error that is inherent to all standard density functional theory calculations is an object of increasing interest. In this article, we apply the very recently developed Fermi-orbital based approach for the self-interaction correction [M. R. Pederson et al., J. Chem. Phys. 140, 121103 (2014) and M. R. Pederson, J. Chem. Phys. 142, 064112 (2015)] to a set of different molecular systems. Our study covers systems ranging from simple diatomic to large organic molecules. We focus our analysis on the direct estimation of the ionization potential from orbital eigenvalues. Further, we show that the Fermi orbitalmore » positions in structurally similar molecules appear to be transferable.« less

Platinum-catalyzed hydrolysis etching of SiC in water: A density functional theory study

NASA Astrophysics Data System (ADS)

Van Bui, Pho; Toh, Daisetsu; Isohashi, Ai; Matsuyama, Satoshi; Inagaki, Kouji; Sano, Yasuhisa; Yamauchi, Kazuto; Morikawa, Yoshitada

2018-05-01

A comprehensive study of the physicochemical interactions and the reaction mechanism of SiC etching with water by Pt catalysts can reveal key details about the surface treatment and catalytic phenomena at interfaces. Therefore, density functional theory simulations were performed to study the kinetics of Pt-assisted water dissociation and breaking of a Si–C bond compared to the HF-assisted mechanism. These calculations carefully considered the elastic and chemical interaction energies at the Pt–SiC interface, activation barriers of Si–C bond dissociation, and the catalytic role of Pt. It was found that the Pt-catalyzed etching of SiC in water is initiated via hydrolysis reactions that break the topmost Si–C bonds. The activation barrier strongly depends on the elastic and chemical interactions. However, chemical interactions are a dominant factor and mainly contribute to the lowering of the activation barrier, resulting in an increased rate of reaction.

Multidimensional Riemann problem with self-similar internal structure - part III - a multidimensional analogue of the HLLI Riemann solver for conservative hyperbolic systems

NASA Astrophysics Data System (ADS)

Balsara, Dinshaw S.; Nkonga, Boniface

2017-10-01

Just as the quality of a one-dimensional approximate Riemann solver is improved by the inclusion of internal sub-structure, the quality of a multidimensional Riemann solver is also similarly improved. Such multidimensional Riemann problems arise when multiple states come together at the vertex of a mesh. The interaction of the resulting one-dimensional Riemann problems gives rise to a strongly-interacting state. We wish to endow this strongly-interacting state with physically-motivated sub-structure. The fastest way of endowing such sub-structure consists of making a multidimensional extension of the HLLI Riemann solver for hyperbolic conservation laws. Presenting such a multidimensional analogue of the HLLI Riemann solver with linear sub-structure for use on structured meshes is the goal of this work. The multidimensional MuSIC Riemann solver documented here is universal in the sense that it can be applied to any hyperbolic conservation law. The multidimensional Riemann solver is made to be consistent with constraints that emerge naturally from the Galerkin projection of the self-similar states within the wave model. When the full eigenstructure in both directions is used in the present Riemann solver, it becomes a complete Riemann solver in a multidimensional sense. I.e., all the intermediate waves are represented in the multidimensional wave model. The work also presents, for the very first time, an important analysis of the dissipation characteristics of multidimensional Riemann solvers. The present Riemann solver results in the most efficient implementation of a multidimensional Riemann solver with sub-structure. Because it preserves stationary linearly degenerate waves, it might also help with well-balancing. Implementation-related details are presented in pointwise fashion for the one-dimensional HLLI Riemann solver as well as the multidimensional MuSIC Riemann solver.

Quantitative determination of airborne respirable non-fibrous alpha-silicon carbide by x-ray powder diffractometry.

PubMed

Bye, E; Føreland, S; Lundgren, L; Kruse, K; Rønning, R

2009-06-01

The purpose of the present investigation was to establish a method for the determination of airborne respirable non-fibrous silicon carbide (SiC). The main application is within the industrial production of SiC. Due to the complex airborne aerosol mixture of crystalline compounds in the SiC industry, X-ray powder diffractometry was selected as the most appropriate method. Without any international standard material for the respirable fraction of non-fibrous SiC, pure and suitable products from three SiC plants in Norway were selected. These products have a median particle diameter in the range 4.4-5.1 mum. The method is based on thin sample technique, with the dust deposited on a polycarbonate filter. Absorption correction is done by standard procedures with the use of a silver filter, situated below the polycarbonate filter. The diffraction line used for quantitative determination was selected carefully. This was done to avoid interferences from quartz, cristobalite, and graphite, which all are airborne components present in the atmosphere during the industrial process. The instrumental limit of detection for the method is 12 microg. This method has been used to determine airborne non-fibrous SiC in a comprehensive ongoing project in the Norwegian SiC industry for further epidemiological studies. The method is fully applicable for compliance work.

Influence of Ni-P Coated SiC and Laser Scan Speed on the Microstructure and Mechanical Properties of IN625 Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Sateesh, N. H.; Kumar, G. C. Mohan; Krishna, Prasad

2015-12-01

Nickel based Inconel-625 (IN625) metal matrix composites (MMCs) were prepared using pre-heated nickel phosphide (Ni-P) coated silicon carbide (SiC) reinforcement particles by Direct Metal Laser Sintering (DMLS) additive manufacturing process under inert nitrogen atmosphere to obtain interface influences on MMCs. The distribution of SiC particles and microstructures were characterized using optical and scanning electron micrographs, and the mechanical behaviours were thoroughly examined. The results clearly reveal that the interface integrity between the SiC particles and the IN625 matrix, the mixed powders flowability, the SiC ceramic particles and laser beam interaction, and the hardness, and tensile characteristics of the DMLS processed MMCs were improved effectively by the use of Ni-P coated SiC particles.

Cs and Ag co-incorporation in cubic silicon carbide

NASA Astrophysics Data System (ADS)

Londono-Hurtado, Alejandro; Heim, Andrew J.; Kim, Sungtae; Szlufarska, Izabela; Morgan, Dane

2013-08-01

Understanding the diffusion of fission products Cs and Ag through the SiC layer of TRISO particles is of particular interest for the progress and improvement of the High Temperature Gas Reactor (HTGR) technologies. Although the SiC layer acts as a barrier for fission products, there is experimental evidence of Cs and Ag diffusion through this layer. Previous considerations of Ag and Cs in SiC have focused on the element interacting with SiC, but have not considered the possibility of co-incorporation with another species. This paper presents a ab initio study on the co-incorporation of Cs and Ag with an anion (Iodine (I) or Oxygen (O)) into SiC as an alternative incorporation mechanism. It is found that for crystalline SiC, Ag co-incorporation with Iodine (I) and Oxygen (O) into SiC is not energetically favorable, while Cs co-incorporation with O is a preferred mechanism under some oxygen partial pressures of interest. However, Cs-O co-incorporation into the crystalline portion of SiC is not sufficiently strong to enable a Cs solubility that accounts for the Cs release observed in some experiments. Formation energies are a function of the chemical potential of Si and C. Calculations in this paper are performed for Si-rich and C-rich conditions, which constitute the boundaries for which the formation energies are allowed to vary. Calculation of the electronic potential shift is required in order to ensure that the Fermi level in a defected cell is defined with respect to the same valence band level in the undefected cell [21,23]. The potential shift is calculated by aligning low energy levels in the total density of states (DOS) [24]. Spurious interactions between images of the charged defects make it necessary to correct for unphysical electrostatic interactions. Both the monopole-monopole and monopole-quadrupole Makov Payne corrections are used for this purpose. However, strain and incompletely corrected electrostatic interactions can still lead to significant finite size effects [25]. Based on finite size scaling studies of our largest charged cluster (CsC-OC-2VSi)4-, we estimate these effects lead to errors on the scale of 1.9 eV. Due to the fact that DFT formalism is unable to reproduce experimental band gaps in materials, underestimation of the band gap is expected. This can have an effect on the calculation of the charged defect formation energies. Therefore, the energetics and charge states of the defects must be treated as somewhat approximate. In this work, the value of the Fermi level is taken to be at the conduction band minimum, a choice that is consistent with an n-type material. This is justified by the fact that as-prepared SiC is generally n-type, with a low concentration of electron carriers [26-29]. It is also important to note that, even if SiC had an intrinsically lower Fermi level, under irradiation conditions long lived electronic excitations might provide effectively higher Fermi levels in the system. Irradiation induced defects such as vacancies and interstitials have been reported to lead to Fermi levels at the middle of the band gap [30,31]. For the case of negatively charged defects, having a Fermi level closer to the middle of the band gap will result in lower defect formation energies. This aspect is not critical for our study since our goal is not to calculate highly accurate formation energies or defect charge states but to compare these energies to identify qualitative trends of co-incorporate for the different defect clusters. Based on the above comments, results presented in this paper can be expected to have some quantitative inaccuracies but the conclusions drawn from these results are still of qualitative value. Furthermore, as will be shown in the result section, formation energy differences between competing energy clusters are above 1 eV for most cases. The main goals of this work are to identify whether Cs and Ag co-incorporation with O and I into SiC can lead to more stable defects than those calculated for simple Cs and Ag defect clusters in SiC and to identify the most stable Cs/Ag-O-V defect clusters in SiC. Although some error will be associated with the formation energies due the limitations discussed above, these do not undermine the qualitative objectives of this work.Oxygen and Iodine chemical potential: In order to calculate the formation energies for Cs/Ag-O defect clusters, it is necessary to define the reference states that will be used in Eq. (1). We make the approximation that the reference for Cs and Ag is their pure metal form. The reference cancels from all comparisons between direct and co-incorporation and therefore only plays a role when considering formation energies for estimating solubility. These reference states can be justified as a bounding case for solubility calculations since it can be argued that if Ag and Cs are not in metal form in the TRISO particle, it is because they are in a more stable state. Therefore, by choosing the metal form of Cs and Ag as the reference, formation energies can be viewed as an upper bound of their chemical potential. As a consequence, formation energies calculated using this reference provide the lower bound for the true formation energy (i.e., the true formation energy would be more positive, leading to lower solubility) [11]. For the anions O and I we use the gas phase O2 and I2 molecules as the reference states, which are calculated as follows:The chemical potential of O is calculated as proposed by Lee et al. [32]: μ={1}/{2}EOVASP+ΔhO0+[H(T,P0)-H(T0,P0)]-TS(T,P0)+kTln(P/P0) where EOVASP is the T = 0 K energy as obtained from the DFT calculations, ΔhO0 is the correction for errors of the oxygen energy in O2 molecules vs. a solid, H is the O2 gas enthalpy, S is the O2 gas entropy, P is the oxygen partial pressure (P0 = 1 atm), T is the temperature (T0 = 298.15 K), and k is the Boltzman constant. The term [H(T,P0)-H(T0,P0)]-TS(T,P0) constitutes the free energy per O of O2 gas relative to the gas enthalpy at P = P0 and T = T0. This term is evaluated based on experimental data from Ref. [33]. Eqs. (1) and (2) are employed to calculate the defect formation energies of oxygen co-incorporation with Cs and Ag into SiC as a function of partial pressure. This approach treats the enthalpy at P0 and T0 as equal to the VASP energy at T = 0 K and further, does not include vibrational terms in the adsorbed species that will be contributing to the gas phase. However, we believe that the contributions of these terms to the chemical potential are small enough for the systems used in our analysis that leaving it out of the model is consistent with the qualitative goals of this work.An analogous approach can be used to treat I2, which gives the relations: μI={1}/{2}EIVASP+ΔhI0+[H(T,P0)-H(T0,P0)]-TS(T,P0)+kTln(P/P0) where EIVASP is the T = 0 K energy as obtained from the DFT calculations, ΔhI0 is the correction for errors of the oxygen energy in I2 molecules vs. a solid, H is the I2 gas enthalpy, S and is the I2 gas entropy. However, we will use a simplified reference for the I chemical potential, which can be justified as follows. It is observed from Eq. (3) that the overall effect of enthalpy and entropy is to decrease the absolute value of the I2 chemical potential for any reasonable P and T that might be encountered under reactor conditions. Furthermore, we will assume that HI2 is small on the scale of the co-incorporation energies (see below), and does not have a significant impact on the overall energetics. With this approximation we see that by choosing the EIVASP as our reference, we are calculating the upper bound of the true formation energy. As will be presented in Section 3, formation energies calculated for the case Ag/Cs-I co-incorporation using the isolated I2 molecule in vacuum at 0 K as the reference state were found to be 5.6 eV or higher than the most stable incorporation defect. While this result does not correct for possible enthalpy errors (the ΔhI0 term), the term accounting for entalphy errors is very unlikely to be on the scale of a few eV. Therefore, we see that even with an upper bound of the chemical potential for I, we can rule out I co-incorporation. As a consequence, we simply take the chemical potential of I to be {1}/{2}EIVASP, and no further refining of the chemical potential was pursued using Eq. (3).

Self-interaction corrections applied to Mg-porphyrin, C60, and pentacene molecules

NASA Astrophysics Data System (ADS)

Pederson, Mark R.; Baruah, Tunna; Kao, Der-you; Basurto, Luis

2016-04-01

We have applied a recently developed method to incorporate the self-interaction correction through Fermi orbitals to Mg-porphyrin, C60, and pentacene molecules. The Fermi-Löwdin orbitals are localized and unitarily invariant to the Kohn-Sham orbitals from which they are constructed. The self-interaction-corrected energy is obtained variationally leading to an optimum set of Fermi-Löwdin orbitals (orthonormalized Fermi orbitals) that gives the minimum energy. A Fermi orbital, by definition, is dependent on a certain point which is referred to as the descriptor position. The degree to which the initial choice of descriptor positions influences the variational approach to the minimum and the complexity of the energy landscape as a function of Fermi-orbital descriptors is examined in detail for Mg-porphyrin. The applications presented here also demonstrate that the method can be applied to larger molecular systems containing a few hundred electrons. The atomization energy of the C60 molecule within the Fermi-Löwdin-orbital self-interaction-correction approach is significantly improved compared to local density approximation in the Perdew-Wang 92 functional and generalized gradient approximation of Perdew-Burke-Ernzerhof functionals. The eigenvalues of the highest occupied molecular orbitals show qualitative improvement.

Characterization of a Complement-Binding Protein, DRS, from Strains of Streptococcus pyogenes Containing the emm12 and emm55 Genes

PubMed Central

Binks, Michael; Sriprakash, K. S.

2004-01-01

An extracellular protein of Streptococcus pyogenes, streptococcal inhibitor of complement (SIC), and its variant, called DRS (distantly related to SIC), are expressed by some S. pyogenes strains. SIC from type 1 (M1) isolates of S. pyogenes interferes with complement-mediated cell lysis, reportedly via its interaction with complement proteins. In this study we demonstrate that S. pyogenes strains carrying emm12 and emm55 (the genes for the M12 and M55 proteins, respectively) express and secrete DRS. This protein, like SIC, binds to the C6 and C7 complement proteins, and competition enzyme-linked immunosorbent assay experiments demonstrate that DRS competes with SIC for C6 and C7 binding. Similarly, SIC competes with DRS for binding to the complement proteins. Despite this, the recombinant DRS preparation showed no significant effect on complement function, as determined by lysis of sensitized sheep erythrocytes. Furthermore, the presence of DRS is not inhibitory to SIC activity. PMID:15213143

Characterization of a complement-binding protein, DRS, from strains of Streptococcus pyogenes containing the emm12 and emm55 genes.

PubMed

Binks, Michael; Sriprakash, K S

2004-07-01

An extracellular protein of Streptococcus pyogenes, streptococcal inhibitor of complement (SIC), and its variant, called DRS (distantly related to SIC), are expressed by some S. pyogenes strains. SIC from type 1 (M1) isolates of S. pyogenes interferes with complement-mediated cell lysis, reportedly via its interaction with complement proteins. In this study we demonstrate that S. pyogenes strains carrying emm12 and emm55 (the genes for the M12 and M55 proteins, respectively) express and secrete DRS. This protein, like SIC, binds to the C6 and C7 complement proteins, and competition enzyme-linked immunosorbent assay experiments demonstrate that DRS competes with SIC for C6 and C7 binding. Similarly, SIC competes with DRS for binding to the complement proteins. Despite this, the recombinant DRS preparation showed no significant effect on complement function, as determined by lysis of sensitized sheep erythrocytes. Furthermore, the presence of DRS is not inhibitory to SIC activity.

Fermi orbital derivatives in self-interaction corrected density functional theory: Applications to closed shell atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pederson, Mark R., E-mail: mark.pederson@science.doe.gov

2015-02-14

A recent modification of the Perdew-Zunger self-interaction-correction to the density-functional formalism has provided a framework for explicitly restoring unitary invariance to the expression for the total energy. The formalism depends upon construction of Löwdin orthonormalized Fermi-orbitals which parametrically depend on variational quasi-classical electronic positions. Derivatives of these quasi-classical electronic positions, required for efficient minimization of the self-interaction corrected energy, are derived and tested, here, on atoms. Total energies and ionization energies in closed-shell singlet atoms, where correlation is less important, using the Perdew-Wang 1992 Local Density Approximation (PW92) functional, are in good agreement with experiment and non-relativistic quantum-Monte-Carlo results albeitmore » slightly too low.« less

Streptococcal inhibitor of complement (SIC) inhibits the membrane attack complex by preventing uptake of C567 onto cell membranes

PubMed Central

Fernie-King, Barbara A; Seilly, David J; Willers, Christine; Würzner, Reinhard; Davies, Alexandra; Lachmann, Peter J

2001-01-01

Streptococcal inhibitor of complement (SIC) was first described in 1996 as a putative inhibitor of the membrane attack complex of complement (MAC). SIC is a 31 000 MW protein secreted in large quantities by the virulent Streptococcus pyogenes strains M1 and M57, and is encoded by a gene which is extremely variable. In order to study further the interactions of SIC with the MAC, we have made a recombinant form of SIC (rSIC) in Escherichia coli and purified native M1 SIC which was used to raise a polyclonal antibody. SIC prevented reactive lysis of guinea pig erythrocytes by the MAC at a stage prior to C5b67 complexes binding to cell membranes, presumably by blocking the transiently expressed membrane insertion site on C7. The ability of SIC and clusterin (another putative fluid phase complement inhibitor) to inhibit complement lysis was compared, and found to be equally efficient. In parallel, by enzyme-linked immunosorbent assay both SIC and rSIC bound strongly to C5b67 and C5b678 complexes and to a lesser extent C5b-9, but only weakly to individual complement components. The implications of these data for virulence of SIC-positive streptococci are discussed, in light of the fact that Gram-positive organisms are already protected against complement lysis by the presence of their peptidoglycan cell walls. We speculate that MAC inhibition may not be the sole function of SIC. PMID:11454069

An Extension of SIC Predictions to the Wiener Coactive Model

PubMed Central

Houpt, Joseph W.; Townsend, James T.

2011-01-01

The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form. PMID:21822333

An Extension of SIC Predictions to the Wiener Coactive Model.

PubMed

Houpt, Joseph W; Townsend, James T

2011-06-01

The survivor interaction contrasts (SIC) is a powerful measure for distinguishing among candidate models of human information processing. One class of models to which SIC analysis can apply are the coactive, or channel summation, models of human information processing. In general, parametric forms of coactive models assume that responses are made based on the first passage time across a fixed threshold of a sum of stochastic processes. Previous work has shown that that the SIC for a coactive model based on the sum of Poisson processes has a distinctive down-up-down form, with an early negative region that is smaller than the later positive region. In this note, we demonstrate that a coactive process based on the sum of two Wiener processes has the same SIC form.

Low Temperature Reactivities of Ultra-High Temperature Ceramics (Hf-X System)

DTIC Science & Technology

2006-03-01

as interacting fillers with the preceramic polymer formulations. In situ formation of the SiC phase was also evaluated as a practical approach in...silicon (reaction-bonded SiC ), which was introduced either as a powder mixed in the original composite formulation or as a subsequent infiltrant that...and their aerospace and turbine applications has led to a renewal of activities to fabricate MB 2/ SiC composites as the materials of choice, because

Nice Guys Finish Fast and Bad Guys Finish Last: Facilitatory vs. Inhibitory Interaction in Parallel Systems

PubMed Central

Eidels, Ami; Houpt, Joseph W.; Altieri, Nicholas; Pei, Lei; Townsend, James T.

2011-01-01

Systems Factorial Technology is a powerful framework for investigating the fundamental properties of human information processing such as architecture (i.e., serial or parallel processing) and capacity (how processing efficiency is affected by increased workload). The Survivor Interaction Contrast (SIC) and the Capacity Coefficient are effective measures in determining these underlying properties, based on response-time data. Each of the different architectures, under the assumption of independent processing, predicts a specific form of the SIC along with some range of capacity. In this study, we explored SIC predictions of discrete-state (Markov process) and continuous-state (Linear Dynamic) models that allow for certain types of cross-channel interaction. The interaction can be facilitatory or inhibitory: one channel can either facilitate, or slow down processing in its counterpart. Despite the relative generality of these models, the combination of the architecture-oriented plus the capacity oriented analyses provide for precise identification of the underlying system. PMID:21516183

Nice Guys Finish Fast and Bad Guys Finish Last: Facilitatory vs. Inhibitory Interaction in Parallel Systems.

PubMed

Eidels, Ami; Houpt, Joseph W; Altieri, Nicholas; Pei, Lei; Townsend, James T

2011-04-01

Systems Factorial Technology is a powerful framework for investigating the fundamental properties of human information processing such as architecture (i.e., serial or parallel processing) and capacity (how processing efficiency is affected by increased workload). The Survivor Interaction Contrast (SIC) and the Capacity Coefficient are effective measures in determining these underlying properties, based on response-time data. Each of the different architectures, under the assumption of independent processing, predicts a specific form of the SIC along with some range of capacity. In this study, we explored SIC predictions of discrete-state (Markov process) and continuous-state (Linear Dynamic) models that allow for certain types of cross-channel interaction. The interaction can be facilitatory or inhibitory: one channel can either facilitate, or slow down processing in its counterpart. Despite the relative generality of these models, the combination of the architecture-oriented plus the capacity oriented analyses provide for precise identification of the underlying system.

Structural, thermal, dielectric spectroscopic and AC impedance properties of SiC nanoparticles doped PVK/PVC blend

NASA Astrophysics Data System (ADS)

Alghunaim, Naziha Suliman

2018-06-01

Nanocomposite films based on poly (N-vinylcarbazole)/polyvinylchloride (PVK/PVC) blend doped with different concentrations of Silicon Carbide (SiC) nanoparticles have been prepared. The X-ray diffraction, Ultra violet-visible spectroscopy, thermogravimetric analysis and electrical spectroscopic has been used to characterize these nanocomposites. The X-ray analysis confirms the semi-crystalline nature of the films. The intensity of the main X-ray peak is decreased due to the interaction between the PVK/PVC and SiC. The main SiC peaks are absent due to complete dissolution of SiC in polymeric matrices. The UV-Vis spectra indicated that the band gap optical energy is affected by adding SiC nanoparticles because the charges transfer complexes between PVK/PVC with amount of SiC. The thermal stability is improved and the estimated values of ε‧ and ε″ are increased with increasing for SiC content due to the free charge carriers which in turn increase the ionic conductivity of the doped samples. The plots of tan δ with frequency are studied. A single peak from the plot between tan δ and Log (f) is appeared and shifted towards the higher frequency confirmed the presence of relaxing dipoles moment.

Super-hydrophobic surfaces of SiO₂-coated SiC nanowires: fabrication, mechanism and ultraviolet-durable super-hydrophobicity.

PubMed

Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan

2015-04-15

The interest in highly water-repellent surfaces of SiO2-coated SiC nanowires has grown in recent years due to the desire for self-cleaning and anticorrosive surfaces. It is imperative that a simple chemical treatment with fluoroalkylsilane (FAS, CF3(CF2)7CH2CH2Si(OC2H5)3) in ethanol solution at room temperature resulted in super-hydrophobic surfaces of SiO2-coated SiC nanowires. The static water contact angle of SiO2-coated SiC nanowires surfaces was changed from 0° to 153° and the morphology, microstructure and crystal phase of the products were almost no transformation before and after super-hydrophobic treatment. Moreover, a mechanism was expounded reasonably, which could elucidate the reasons for their super-hydrophobic behavior. It is important that the super-hydrophobic surfaces of SiO2-coated SiC nanowires possessed ultraviolet-durable (UV-durable) super-hydrophobicity. Copyright © 2014 Elsevier Inc. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szlufarska, Izabela; Voyles, Paul; Sridharan, Kumar

Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is criticalmore » to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and modeling effort to discover the previously invisible defects in irradiated SiC and to determine the contributions of these defects to radiation swelling. Knowledge of the most stable defect structures and the rate controlling processes during defect evolution is essential for development of predictive models for swelling and creep as a function of temperature and radiation dose. This research has been enabled by state-of-the-art imaging techniques, such as the aberration corrected scanning transmission electron microscopy (STEM) (FEI TITAN) closely coupled with multi-scale models of stable defect clusters and their evolution.« less

Low-Temperature Reactivities of Ultra-High Temperature Ceramics (Hf-X System)

DTIC Science & Technology

2005-12-01

as interacting fillers with the preceramic polymer formulations. In situ formation of the SiC phase was also evaluated as a practical approach in...led to a renewal of activities to fabricate MB2/ SiC composites as the materials of choice, because of their high thermal and oxidation resistance...HfB2/ SiC composite microstructures (and also HfC, ZrB2, and ZrC composites ) under pressureless conditions. These can be employed in reactive and

Ensemble density variational methods with self- and ghost-interaction-corrected functionals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pastorczak, Ewa; Pernal, Katarzyna, E-mail: pernalk@gmail.com

2014-05-14

Ensemble density functional theory (DFT) offers a way of predicting excited-states energies of atomic and molecular systems without referring to a density response function. Despite a significant theoretical work, practical applications of the proposed approximations have been scarce and they do not allow for a fair judgement of the potential usefulness of ensemble DFT with available functionals. In the paper, we investigate two forms of ensemble density functionals formulated within ensemble DFT framework: the Gross, Oliveira, and Kohn (GOK) functional proposed by Gross et al. [Phys. Rev. A 37, 2809 (1988)] alongside the orbital-dependent eDFT form of the functional introducedmore » by Nagy [J. Phys. B 34, 2363 (2001)] (the acronym eDFT proposed in analogy to eHF – ensemble Hartree-Fock method). Local and semi-local ground-state density functionals are employed in both approaches. Approximate ensemble density functionals contain not only spurious self-interaction but also the so-called ghost-interaction which has no counterpart in the ground-state DFT. We propose how to correct the GOK functional for both kinds of interactions in approximations that go beyond the exact-exchange functional. Numerical applications lead to a conclusion that functionals free of the ghost-interaction by construction, i.e., eDFT, yield much more reliable results than approximate self- and ghost-interaction-corrected GOK functional. Additionally, local density functional corrected for self-interaction employed in the eDFT framework yields excitations energies of the accuracy comparable to that of the uncorrected semi-local eDFT functional.« less

Self-interaction-corrected time-dependent density-functional-theory calculations of x-ray-absorption spectra

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tu, Guangde; Rinkevicius, Zilvinas; Vahtras, Olav

We outline an approach within time-dependent density functional theory that predicts x-ray spectra on an absolute scale. The approach rests on a recent formulation of the resonant-convergent first-order polarization propagator [P. Norman et al., J. Chem. Phys. 123, 194103 (2005)] and corrects for the self-interaction energy of the core orbital. This polarization propagator approach makes it possible to directly calculate the x-ray absorption cross section at a particular frequency without explicitly addressing the excited-state spectrum. The self-interaction correction for the employed density functional accounts for an energy shift of the spectrum, and fully correlated absolute-scale x-ray spectra are thereby obtainedmore » based solely on optimization of the electronic ground state. The procedure is benchmarked against experimental spectra of a set of small organic molecules at the carbon, nitrogen, and oxygen K edges.« less

Metallic impurities-silicon carbide interaction in HTGR fuel particles

NASA Astrophysics Data System (ADS)

Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

1990-12-01

Corrosion of the coating layers of silicon carbide (SiC) by metallic impurities was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors with an optical microscope and an electron probe micro-analyzer. The SiC layers were attacked from the outside of the particles. The main element observed in the corroded areas was iron, but sometimes iron and nickel were found. These elements must have been contained as impurities in the graphite matrix in which the coated particles were dispersed. Since these elements are more stable thermodynamically in the presence of SiC than in the presence of graphite at irradiation temperatures, they were transferred to the SiC layer to form more stable silicides. During fuel manufacturing processes, intensive care should be taken to prevent the fuel from being contaminated with those elements which react with SiC.

Ab initio molecular dynamics simulation of the effects of stacking faults on the radiation response of 3C-SiC

PubMed Central

Jiang, M.; Peng, S. M.; Zhang, H. B.; Xu, C. H.; Xiao, H. Y.; Zhao, F. A.; Liu, Z. J.; Zu, X. T.

2016-01-01

In this study, an ab initio molecular dynamics method is employed to investigate how the existence of stacking faults (SFs) influences the response of SiC to low energy irradiation. It reveals that the C and Si atoms around the SFs are generally more difficult to be displaced than those in unfaulted SiC, and the corresponding threshold displacement energies for them are generally larger, indicative of enhanced radiation tolerance caused by the introduction of SFs, which agrees well with the recent experiment. As compared with the unfaulted state, more localized point defects are generated in faulted SiC. Also, the efficiency of damage production for Si recoils is generally higher than that of C recoils. The calculated potential energy increases for defect generation in SiC with intrinsic and extrinsic SFs are found to be higher than those in unfaulted SiC, due to the stronger screen-Coulomb interaction between the PKA and its neighbors. The presented results provide a fundamental insight into the underlying mechanism of displacement events in faulted SiC and will help to advance the understanding of the radiation response of SiC with and without SFs. PMID:26880027

Tweens feel the burn: "salt and ice challenge" burns.

PubMed

Roussel, Lauren O; Bell, Derek E

2016-05-01

To review our institution's experience with frostbite injury secondary to "salt and ice challenge" (SIC) participation. We conducted a retrospective analysis of intentional freezing burns from 2012 to 2014. Demographics, depth and location of burn, total body surface area of burn, treatment, time to wound healing, length of stay, complications, and motives behind participation were analyzed. Five patients were seen in the emergency department for intentional freezing burns that resulted from SIC (all females; mean age: 12.3 years; range age: 10.0-13.2 years). Mean total body surface area was 0.408%. Salt and ice was in contact with skin for >10 min for two patients, >20 min for two patients, and an unknown duration for one patient. Complications included pain and burn scar dyschromia. Four patients cited peer pressure and desire to replicate SIC as seen on the Internet as their motivation in attempting the challenge. SIC has become a popular, self-harming behavior among youths. Increased public education, and provider and parent awareness of SIC are essential to address this public health concern.

Investigation of gas surface interactions at self-assembled silicon surfaces acting as gas sensors

NASA Astrophysics Data System (ADS)

Narducci, Dario; Bernardinello, Patrizia; Oldani, Matteo

2003-05-01

This paper reports the results of an investigation aimed at using self-assembled monolayers to modify the supramolecular interactions between Si surfaces and gaseous molecules. The specific goal is that of employing molecularly imprinted silicon surfaces to develop a new class of chemical sensors capable to detect species with enhanced selectivity. Single-crystal p-type (0 0 1) silicon has been modified by grafting organic molecules onto its surface by using wet chemistry synthetic methods. Silicon has been activated toward nucleophilic attack by brominating its surface using a modified version of the purple etch, and aromatic fragments have been bonded through the formation of direct Si-C bonds onto it using Grignard reagents or lithium aryl species. Formation of self-assembled monolayers (SAMs) was verified by using vibrational spectroscopy. Porous metal-SAM-Si diodes have been successfully tested as resistive chemical sensors toward NO x, SO x, CO, NH 3 and methane. Current-voltage characteristics measured at different gas compositions showed that the mechanism of surface electron density modulation involves a modification of the junction barrier height upon gas adsorption. Quantum-mechanical simulations of the interaction mechanism were carried out using different computational methods to support such an interaction mechanism. The results obtained appear to open up new relevant applications of the SAM techniques in the area of gas sensing.

A Comparative Study of Clear Corneal Phacoemulsification with Rigid IOL Versus SICS; the Preferred Surgical Technique in Low Socio-economic group Patients of Rural Areas.

PubMed

Devendra, Jaya; Agarwal, Smita; Singh, Pankaj Kumar

2014-11-01

Low socio-economic group patients from rural areas often opt for free cataract surgeries offered by charitable organisations. SICS continues to be a time tested technique for cataract removal in such patients. In recent times, camp patients are sometimes treated by clear corneal phacoemulsification with implantation of a rigid IOL, which being more cost effective is often provided for camp patients. This study was undertaken to find out which surgical technique yielded better outcomes and was more suited for high volume camp surgery. To find the better surgical option- phacoemulsification with rigid IOL or SICS, in poor patients from rural areas. A prospective randomised controlled trial of cataract patients operated by two different techniques. One hundred and twelve eyes were selected and were randomly allocated into two groups of 56 eyes each. At completion of the study, data was analysed for 52 eyes operated by clear corneal phacoemulsification and implantation of a rigid IOL, and 56 eyes operated by SICS. Unpaired t-test was used to calculate the p- value. The results were evaluated on the following criteria. The mean post-operative astigmatism at the end of four weeks - was significantly higher in phacoemulsification group as compared to SICS group The BCVA (best corrected visual acuity) at the end of four weeks - was comparable in both groups. Subjective complaints and/ or complications: In phaco group two patients required sutures and seven had striate keratitis , while none in SICS group. Complaint of irritation was similar in both groups. Surgical time- was less for SICS group as compared to phaco group. SICS by virtue of being a faster surgery with more secure wound and significantly less astigmatism is a better option in camp patients from rural areas as compared to phacoemulsification with rigid IOL.

An allosteric conduit facilitates dynamic multisite substrate recognition by the SCFCdc4 ubiquitin ligase

NASA Astrophysics Data System (ADS)

Csizmok, Veronika; Orlicky, Stephen; Cheng, Jing; Song, Jianhui; Bah, Alaji; Delgoshaie, Neda; Lin, Hong; Mittag, Tanja; Sicheri, Frank; Chan, Hue Sun; Tyers, Mike; Forman-Kay, Julie D.

2017-01-01

The ubiquitin ligase SCFCdc4 mediates phosphorylation-dependent elimination of numerous substrates by binding one or more Cdc4 phosphodegrons (CPDs). Methyl-based NMR analysis of the Cdc4 WD40 domain demonstrates that Cyclin E, Sic1 and Ash1 degrons have variable effects on the primary Cdc4WD40 binding pocket. Unexpectedly, a Sic1-derived multi-CPD substrate (pSic1) perturbs methyls around a previously documented allosteric binding site for the chemical inhibitor SCF-I2. NMR cross-saturation experiments confirm direct contact between pSic1 and the allosteric pocket. Phosphopeptide affinity measurements reveal negative allosteric communication between the primary CPD and allosteric pockets. Mathematical modelling indicates that the allosteric pocket may enhance ultrasensitivity by tethering pSic1 to Cdc4. These results suggest negative allosteric interaction between two distinct binding pockets on the Cdc4WD40 domain may facilitate dynamic exchange of multiple CPD sites to confer ultrasensitive dependence on substrate phosphorylation.

Effect of application mode on interfacial morphology and chemistry between dentin and self-etch adhesives

PubMed Central

Zhang, Ying; Wang, Yong

2012-01-01

Objective To investigate the influence of application mode on the interfacial morphology and chemistry between dentin and self-etch adhesives with different aggressiveness. Methods The occlusal one-third of the crown was removed from un-erupted human third molars, followed by abrading with 600 grit SiC under water. Rectangular dentin slabs were prepared by sectioning the tooth specimens perpendicular to the abraded surfaces. The obtained dentin slabs were treated with one of the two one-step self-etch adhesives: Adper Easy Bond (AEB, PH~2.5) and Adper Prompt L-Pop (APLP, PH~0.8) with (15s, active application) or without (15s, inactive application) agitation. The dentin slabs were fractured and the exposed adhesive/dentin (A/D) interfaces were examined with micro-Raman spectroscopy and scanning electron microscopy (SEM). Results The interfacial morphology, degree of dentin demineralization (DD) and degree of conversion (DC) of the strong self-etch adhesive APLP showed more significant dependence on the application mode than the mild AEB. APLP exhibited inferior bonding at the A/D interface if applied without agitation, evidenced by debonding from the dentin substrate. The DDs and DCs of the APLP with agitation were higher than those of without agitation in the interface, in contrast to the comparable DD and DC values of two AEB specimen groups with different application modes. Raman spectral analysis revealed the important role of chemical interaction between acid monomers of self-etch adhesives and dentin in the above observations. Conclusion The chemical interaction with dentin is especially important for improving the DC of the strong self-etching adhesive at the A/D interface. Agitation could benefit polymerization efficacy of the strong self-etch adhesive through enhancing the chemical interaction with tooth substrate. PMID:23153573

How important is self-consistency for the dDsC density dependent dispersion correction?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brémond, Éric; Corminboeuf, Clémence, E-mail: clemence.corminboeuf@epfl.ch; Golubev, Nikolay

2014-05-14

The treatment of dispersion interactions is ubiquitous but computationally demanding for seamless ab initio approaches. A highly popular and simple remedy consists in correcting for the missing interactions a posteriori by adding an attractive energy term summed over all atom pairs to standard density functional approximations. These corrections were originally based on atom pairwise parameters and, hence, had a strong touch of empiricism. To overcome such limitations, we recently proposed a robust system-dependent dispersion correction, dDsC, that is computed from the electron density and that provides a balanced description of both weak inter- and intramolecular interactions. From the theoretical pointmore » of view and for the sake of increasing reliability, we here verify if the self-consistent implementation of dDsC impacts ground-state properties such as interaction energies, electron density, dipole moments, geometries, and harmonic frequencies. In addition, we investigate the suitability of the a posteriori scheme for molecular dynamics simulations, for which the analysis of the energy conservation constitutes a challenging tests. Our study demonstrates that the post-SCF approach in an excellent approximation.« less

Invited Paper - Density functional theory: coverage of dynamic and non-dynamic electron correlation effects

NASA Astrophysics Data System (ADS)

Cremer, Dieter

The electron correlation effects covered by density functional theory (DFT) can be assessed qualitatively by comparing DFT densities ρ(r) with suitable reference densities obtained with wavefunction theory (WFT) methods that cover typical electron correlation effects. The analysis of difference densities ρ(DFT)-ρ(WFT) reveals that LDA and GGA exchange (X) functionals mimic non-dynamic correlation effects in an unspecified way. It is shown that these long range correlation effects are caused by the self-interaction error (SIE) of standard X functionals. Self-interaction corrected (SIC) DFT exchange gives, similar to exact exchange, for the bonding region a delocalized exchange hole, and does not cover any correlation effects. Hence, the exchange SIE is responsible for the fact that DFT densities often resemble MP4 or MP2 densities. The correlation functional changes X-only DFT densities in a manner observed when higher order coupling effects between lower order N-electron correlation effects are included. Hybrid functionals lead to changes in the density similar to those caused by SICDFT, which simply reflects the fact that hybrid functionals have been developed to cover part of the SIE and its long range correlation effects in a balanced manner. In the case of spin-unrestricted DFT (UDFT), non-dynamic electron correlation effects enter the calculation both via the X functional and via the wavefunction, which may cause a double-counting of correlation effects. The use of UDFT in the form of permuted orbital and broken-symmetry DFT (PO-UDFT, BS-UDFT) can lead to reasonable descriptions of multireference systems provided certain conditions are fulfilled. More reliable, however, is a combination of DFT and WFT methods, which makes the routine description of multireference systems possible. The development of such methods implies a separation of dynamic and non-dynamic correlation effects. Strategies for accomplishing this goal are discussed in general and tested in practice for CAS (complete active space)-DFT.

Synergetic Effect of Graphene and MWCNTs on Microstructure and Mechanical Properties of Cu/Ti3SiC2/C Nanocomposites

NASA Astrophysics Data System (ADS)

Jiang, Xiaosong; Song, Tingfeng; Shao, Zhenyi; Liu, Wanxia; Zhu, Degui; Zhu, Minhao

2017-11-01

Multi-walled carbon nanotubes (MWCNTs) and graphenes have been taken for novel reinforcements due to their unique structure and performance. However, MWCNTs or graphenes reinforced copper matrix composites could not catch up with ideal value due to reinforcement dispersion in metal matrix, wettability to metal matrix, and composite material interface. Taking advantage of the superior properties of one-dimensional MWCNTs and two-dimensional graphenes, complementary performance and structure are constructed to create a high contact area between MWCNTs and graphenes to the Cu matrix. Mechanical alloying, hot pressing, and hot isostatic pressing techniques are used to fabricate Cu matrix self-lubricating nanocomposites. Effects of MWCNTs and graphenes on mechanical properties and microstructures of Cu/Ti3SiC2/C nanocomposites are studied. The fracture and strengthening mechanisms of Cu/Ti3SiC2/C nanocomposites are explored on the basis of structure and composition of Cu/Ti3SiC2/C nanocomposites with formation and function of interface.

Casimir forces from conductive silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Sedighi, M.; Svetovoy, V. B.; Broer, W. H.; Palasantzas, G.

2014-05-01

Samples of conductive silicon carbide (SiC), which is a promising material due to its excellent properties for devices operating in severe environments, were characterized with the atomic force microscope for roughness, and the optical properties were measured with ellipsometry in a wide range of frequencies. The samples show significant far-infrared absorption due to concentration of charge carriers and a sharp surface phonon-polariton peak. The Casimir interaction of SiC with different materials is calculated and discussed. As a result of the infrared structure and beyond to low frequencies, the Casimir force for SiC-SiC and SiC-Au approaches very slowly the limit of ideal metals, while it saturates significantly below this limit if interaction with insulators takes place (SiC-SiO2). At short separations (<10 nm) analysis of the van der Waals force yielded Hamaker constants for SiC-SiC interactions lower but comparable to those of metals, which is of significance to adhesion and surface assembly processes. Finally, bifurcation analysis of microelectromechanical system actuation indicated that SiC can enhance the regime of stable equilibria against stiction.

Can the behavioral sciences self-correct? A social epistemic study.

PubMed

Romero, Felipe

2016-12-01

Advocates of the self-corrective thesis argue that scientific method will refute false theories and find closer approximations to the truth in the long run. I discuss a contemporary interpretation of this thesis in terms of frequentist statistics in the context of the behavioral sciences. First, I identify experimental replications and systematic aggregation of evidence (meta-analysis) as the self-corrective mechanism. Then, I present a computer simulation study of scientific communities that implement this mechanism to argue that frequentist statistics may converge upon a correct estimate or not depending on the social structure of the community that uses it. Based on this study, I argue that methodological explanations of the "replicability crisis" in psychology are limited and propose an alternative explanation in terms of biases. Finally, I conclude suggesting that scientific self-correction should be understood as an interaction effect between inference methods and social structures. Copyright © 2016 Elsevier Ltd. All rights reserved.

Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC

NASA Astrophysics Data System (ADS)

Kyoung, Sinsu; Jung, Eun-Sik; Sung, Man Young

2017-07-01

Although trench gate and super-junction technology have micro-trench problems when applied to the SiC process due to the material characteristics. In this paper, area effects are analyzed from the test element group with various patterns and optical proximity correction (OPC) methods are proposed and analyzed to reduce micro-trenches in the SiC trench etching process. First, the loading effects were analyzed from pattern samples with various trench widths (Wt). From experiments, the area must limited under a proper size for a uniform etching profile and reduced micro-trenches because a wider area accelerates the etch rate. Second, the area effects were more severely unbalanced at corner patterns because the corner pattern necessarily has an in-corner and out-corner that have different etching areas to each other. We can balance areas using OPC patterns to overcome this. Experiments with OPC represented improved micro-trench profile from when comparing differences of trench depth (Δdt) at out corner and in corner. As a result, the area effects can be used to improve the trench profile with optimized etching process conditions. Therefore, the trench gate and super-junction pillar of the SiC power MOSFET can have an improved uniform profile without micro-trenches using proper design and OPC.[Figure not available: see fulltext.

Hybrid quantum and molecular mechanics embedded cluster models for chemistry on silicon and silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Shoemaker, James Richard

Fabrication of silicon carbide (SiC) semiconductor devices are of interest for aerospace applications because of their high-temperature tolerance. Growth of an insulating SiO2 layer on SiC by oxidation is a poorly understood process, and sometimes produces interface defects that degrade device performance. Accurate theoretical models of surface chemistry, using quantum mechanics (QM), do not exist because of the huge computational cost of solving Schrodinger's equation for a molecular cluster large enough to represent a surface. Molecular mechanics (MM), which describes a molecule as a collection of atoms interacting through classical potentials, is a fast computational method, good at predicting molecular structure, but cannot accurately model chemical reactions. A new hybrid QM/MM computational method for surface chemistry was developed and applied to silicon and SiC surfaces. The addition of MM steric constraints was shown to have a large effect on the energetics of O atom adsorption on SiC. Adsorption of O atoms on Si-terminated SiC(111) favors above surface sites, in contrast to Si(111), but favors subsurface adsorption sites on C- terminated SiC(111). This difference, and the energetics of C atom etching via CO2 desorption, can explain the observed poor performance of SiC devices in which insulating layers were grown on C-terminated surfaces.

Modeling the Elastic Modulus of 2D Woven CVI SiC Composites

NASA Technical Reports Server (NTRS)

Morscher, Gregory N.

2006-01-01

The use of fiber, interphase, CVI SiC minicomposites as structural elements for 2D-woven SiC fiber reinforced chemically vapor infiltrated (CVI) SiC matrix composites is demonstrated to be a viable approach to model the elastic modulus of these composite systems when tensile loaded in an orthogonal direction. The 0deg (loading direction) and 90deg (perpendicular to loading direction) oriented minicomposites as well as the open porosity and excess SiC associated with CVI SiC composites were all modeled as parallel elements using simple Rule of Mixtures techniques. Excellent agreement for a variety of 2D woven Hi-Nicalon(TradeMark) fiber-reinforced and Sylramic-iBN reinforced CVI SiC matrix composites that differed in numbers of plies, constituent content, thickness, density, and number of woven tows in either direction (i.e, balanced weaves versus unbalanced weaves) was achieved. It was found that elastic modulus was not only dependent on constituent content, but also the degree to which 90deg minicomposites carried load. This depended on the degree of interaction between 90deg and 0deg minicomposites which was quantified to some extent by composite density. The relationships developed here for elastic modulus only necessitated the knowledge of the fractional contents of fiber, interphase and CVI SiC as well as the tow size and shape. It was concluded that such relationships are fairly robust for orthogonally loaded 2D woven CVI SiC composite system and can be implemented by ceramic matrix composite component modelers and designers for modeling the local stiffness in simple or complex parts fabricated with variable constituent contents.

Optimization of self-interstitial clusters in 3C-SiC with genetic algorithm

NASA Astrophysics Data System (ADS)

Ko, Hyunseok; Kaczmarowski, Amy; Szlufarska, Izabela; Morgan, Dane

2017-08-01

Under irradiation, SiC develops damage commonly referred to as black spot defects, which are speculated to be self-interstitial atom clusters. To understand the evolution of these defect clusters and their impacts (e.g., through radiation induced swelling) on the performance of SiC in nuclear applications, it is important to identify the cluster composition, structure, and shape. In this work the genetic algorithm code StructOpt was utilized to identify groundstate cluster structures in 3C-SiC. The genetic algorithm was used to explore clusters of up to ∼30 interstitials of C-only, Si-only, and Si-C mixtures embedded in the SiC lattice. We performed the structure search using Hamiltonians from both density functional theory and empirical potentials. The thermodynamic stability of clusters was investigated in terms of their composition (with a focus on Si-only, C-only, and stoichiometric) and shape (spherical vs. planar), as a function of the cluster size (n). Our results suggest that large Si-only clusters are likely unstable, and clusters are predominantly C-only for n ≤ 10 and stoichiometric for n > 10. The results imply that there is an evolution of the shape of the most stable clusters, where small clusters are stable in more spherical geometries while larger clusters are stable in more planar configurations. We also provide an estimated energy vs. size relationship, E(n), for use in future analysis.

Towards Compensation Correctness in Interactive Systems

NASA Astrophysics Data System (ADS)

Vaz, Cátia; Ferreira, Carla

One fundamental idea of service-oriented computing is that applications should be developed by composing already available services. Due to the long running nature of service interactions, a main challenge in service composition is ensuring correctness of failure recovery. In this paper, we use a process calculus suitable for modelling long running transactions with a recovery mechanism based on compensations. Within this setting, we discuss and formally state correctness criteria for compensable processes compositions, assuming that each process is correct with respect to failure recovery. Under our theory, we formally interpret self-healing compositions, that can detect and recover from failures, as correct compositions of compensable processes.

Improvements in SiC{sub w}/Al{sub 2}O{sub 3} composites through colloidally stabilized suspensions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crimp, M.J.; Oppermann, D.A.; Zhang, M.

1994-12-31

Through manipulation of colloidal parameters, suspensions of SiC(whisker)/Al{sub 2}O{sub 3} were prepared, at 5, 10 and 20 vol% SiC whisker, using processing conditions established in Stable Suspension{copyright}. Utilizing Hogg, Healy and Furstenau`s modifications to DLVO theory, this program predicts stability conditions for composite suspensions. Variations in the suspension pH induce changes in the attractive/repulsive interactions between components. This type of interaction in turn influences the packing and green density. Composite suspensions were prepared, freeze dried, then cold consolidated. The distribution of the SiC whiskers within the Al{sub 2}O{sub 3} matrix was determined from SEM micrographs and the composite green densitymore » correlated to the extent of homo- versus heterostability within the composite suspension. The green density of the pure Al{sub 2}O{sub 3} and the 5 vol% SiC whisker additions was the highest at the pH of maximum stability for each interaction. In contrast, at whisker additions of 10 and 20 vol%, the green density is the highest at a pH of low heterostability.« less

Particle Generation and Evolution in Silane/Acetylene Flames in Microgravity

NASA Technical Reports Server (NTRS)

Keil, D. G.

2001-01-01

The objective of this new experimental program is to advance the understanding of the formation of particles from gas phase combustion processes. The work will utilize the unique SiH4/C2H2 combustion system which generates particulate products ranging from high purity, white SiC to carbonaceous soot depending on equivalence ratio. A key goal of this work is to identify gas phase or particle formation processes that provide the enthalpy release necessary to drive the combustion wave, and to locate the parts of the particle formation process that determine SiC stoichiometry and crystallinity. In a real sense, these SiH4/C2H2 flames act like "highly sooty" hydrocarbon flames, but with simpler chemistry. This simplification is expected to allow them to be used as surrogates to advance understanding of soot formation in such rich hydrocarbon flames. It is also expected that this improved understanding of SiC particle generation and evolution in these self-sustaining flames will advance the commercial potential of the flame process for the generation of high purity SiC powders.

Particle Generation And Evolution In Silane (SiH4)/Acetylene (C2H2) Flames In Microgravity

NASA Technical Reports Server (NTRS)

Keil, D. G.

2003-01-01

The objective of this experimental program is to advance the understanding of the coupling of particle formation with gas phase combustion processes. The work utilizes the unique SiH4/C2H2 combustion system which generates particulate products ranging from high purity, white SiC to carbonaceous soot depending on equivalence ratio (Ref. 1). A goal of this work is to identify gas phase or particle formation processes that provide the enthalpy release needed to drive the combustion wave, and to locate the steps of the particle formation process that determine SiC stoichiometry and crystallinity. In a real sense, these SiH4/C2H2 flames act like highly sooty hydrocarbon flames, but with simpler chemistry. This simplification is expected to allow them to be used as surrogates to advance understanding of soot formation in such rich hydrocarbon flames. It is also expected that this improved understanding of SiC particle generation and evolution in these self-sustaining flames will advance the commercial potential of the flame process for the generation of high purity SiC powders.

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Federal Register 2010, 2011, 2012, 2013, 2014

2010-01-14

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Moissanite (SiC) with metal-silicide and silicon inclusions from tuff of Israel: Raman spectroscopy and electron microscope studies

NASA Astrophysics Data System (ADS)

Dobrzhinetskaya, Larissa; Mukhin, Pavel; Wang, Qin; Wirth, Richard; O'Bannon, Earl; Zhao, Wenxia; Eppelbaum, Lev; Sokhonchuk, Tatiana

2018-06-01

Here, we present studies of natural SiC that occurs in situ in tuff related to the Miocene alkaline basalt formation deposited in northern part of Israel. Raman spectroscopy, SEM and FIB-assisted TEM studies revealed that SiC is primarily hexagonal polytypes 4H-SiC and 6H-SiC, and that the 4H-SiC polytype is the predominant phase. Both SiC polytypes contain crystalline inclusions of silicon (Sio) and inclusions of metal-silicide with varying compositions (e.g. Si58V25Ti12Cr3Fe2, Si41Fe24Ti20Ni7V5Zr3, and Si43Fe40Ni17). The silicides crystal structure parameters match Si2TiV5 (Pm-3m space group, cubic), FeSi2Ti (Pbam space group, orthorhombic), and FeSi2 (Cmca space group, orthorhombic) respectively. We hypothesize that SiC was formed in a local ultra-reduced environment at respectively shallow depths (60-100 km), through a reaction of SiO2 with highly reducing fluids (H2O-CH4-H2-C2H6) arisen from the mantle "hot spot" and passing through alkaline basalt magma reservoir. SiO2 interacting with the fluids may originate from the walls of the crustal rocks surrounding this magmatic reservoir. This process led to the formation of SiC and accompanied by the reducing of metal-oxides to native metals, alloys, and silicides. The latter were trapped by SiC during its growth. Hence, interplate "hot spot" alkali basalt volcanism can now be included as a geological environment where SiC, silicon, and silicides can be found.

Study of silicon carbide formation by liquid silicon infiltration of porous carbon structures

NASA Astrophysics Data System (ADS)

Margiotta, Jesse C.

Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making fully dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure followed by conversion of this carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low reactivity and porosity, and cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose:resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800°C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm-3 (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process were studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Such knowledge can be used to further refine the LSI technique. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. Thus, SiC made by our LSI process is an ideally suited material for use in high temperature heat exchanger applications. Electron probe microanalysis (EPMA) and Auger electron spectroscopy (AES) were used to study the chemical composition of LSI SiC materials. Optimized low voltage microanalysis conditions for EPMA of SiC were theoretically determined. EPMA and AES measurements indicate that the SiC phase in our materials is slightly carbon rich. Carbon contamination was identified as a possible source of error during EPMA of SiC, and this error was corrected by using high purity SiC standards. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp 2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin.

Pellet cladding mechanical interactions of ceramic claddings fuels under light water reactor conditions

NASA Astrophysics Data System (ADS)

Li, Bo-Shiuan

Ceramic materials such as silicon carbide (SiC) are promising candidate materials for nuclear fuel cladding and are of interest as part of a potential accident tolerant fuel design due to its high temperature strength, dimensional stability under irradiation, corrosion resistance, and lower neutron absorption cross-section. It also offers drastically lower hydrogen generation in loss of coolant accidents such as that experienced at Fukushima. With the implementation of SiC material properties to the fuel performance code, FRAPCON, performances of the SiC-clad fuel are compared with the conventional Zircaloy-clad fuel. Due to negligible creep and high stiffness, SiC-clad fuel allows gap closure at higher burnup and insignificant cladding dimensional change. However, severe degradation of SiC thermal conductivity with neutron irradiation will lead to higher fuel temperature with larger fission gas release. High stiffness of SiC has a drawback of accumulating large interfacial pressure upon pellet-cladding mechanical interactions (PCMI). This large stress will eventually reach the flexural strength of SiC, causing failure of SiC cladding instantly in a brittle manner instead of the graceful failure of ductile metallic cladding. The large interfacial pressure causes phenomena that were previously of only marginal significance and thus ignored (such as creep of the fuel) to now have an important role in PCMI. Consideration of the fuel pellet creep and elastic deformation in PCMI models in FRAPCON provide for an improved understanding of the magnitude of accumulated interfacial pressure. Outward swelling of the pellet is retarded by the inward irradiation-induced creep, which then reduces the rate of interfacial pressure buildup. Effect of PCMI can also be reduced and by increasing gap width and cladding thickness. However, increasing gap width and cladding thickness also increases the overall thermal resistance which leads to higher fuel temperature and larger fission gas release. An optimum design is sought considering both thermal and mechanical models of this ceramic cladding with UO2 and advanced high density fuels.

Over-the-air in-band full-duplex system with hybrid RF optical and baseband digital self-interference cancellation

NASA Astrophysics Data System (ADS)

Zhang, Yunhao; Li, Longsheng; Bi, Meihua; Xiao, Shilin

2017-12-01

In this paper, we propose a hybrid analog optical self-interference cancellation (OSIC) and baseband digital SIC (DSIC) system for over-the-air in-band full-duplex (IBFD) wireless communication. Analog OSIC system is based on optical delay line, electro-absorption modulation lasers (EMLs) and balanced photodetector (BPD), which has the properties of high adjusting precision and broad processing bandwidth. With the help of baseband DSIC, the cancellation depth limitation of OSIC can be mitigated so as to achieve deeper total SIC depth. Experimental results show about 20-dB depth by OSIC and 10-dB more depth by DSIC over 1GHz broad baseband, so that the signal of interest (SOI) overlapped by wideband self-interference (SI) signal is better recovered compared to the IBFD system with OSIC or DSIC only. The hybrid of OSIC and DSIC takes advantages of the merits of optical devices and digital processors to achieve deep cancellation depth over broad bandwidth.

Interaction and self-correction

PubMed Central

Satne, Glenda L.

2014-01-01

In this paper, I address the question of how to account for the normative dimension involved in conceptual competence in a naturalistic framework. First, I present what I call the naturalist challenge (NC), referring to both the phylogenetic and ontogenetic dimensions of conceptual possession and acquisition. I then criticize two models that have been dominant in thinking about conceptual competence, the interpretationist and the causalist models. Both fail to meet NC, by failing to account for the abilities involved in conceptual self-correction. I then offer an alternative account of self-correction that I develop with the help of the interactionist theory of mutual understanding arising from recent developments in phenomenology and developmental psychology. PMID:25101044

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pederson, Mark R.; Baruah, Tunna; Basurto, Luis

We have applied a recently developed method to incorporate the self-interaction correction through Fermi orbitals to Mg-porphyrin, C{sub 60}, and pentacene molecules. The Fermi-Löwdin orbitals are localized and unitarily invariant to the Kohn-Sham orbitals from which they are constructed. The self-interaction-corrected energy is obtained variationally leading to an optimum set of Fermi-Löwdin orbitals (orthonormalized Fermi orbitals) that gives the minimum energy. A Fermi orbital, by definition, is dependent on a certain point which is referred to as the descriptor position. The degree to which the initial choice of descriptor positions influences the variational approach to the minimum and the complexitymore » of the energy landscape as a function of Fermi-orbital descriptors is examined in detail for Mg-porphyrin. The applications presented here also demonstrate that the method can be applied to larger molecular systems containing a few hundred electrons. The atomization energy of the C{sub 60} molecule within the Fermi-Löwdin-orbital self-interaction-correction approach is significantly improved compared to local density approximation in the Perdew-Wang 92 functional and generalized gradient approximation of Perdew-Burke-Ernzerhof functionals. The eigenvalues of the highest occupied molecular orbitals show qualitative improvement.« less

Alkali (Li, K and Na) and alkali-earth (Be, Ca and Mg) adatoms on SiC single layer

NASA Astrophysics Data System (ADS)

Baierle, Rogério J.; Rupp, Caroline J.; Anversa, Jonas

2018-03-01

First-principles calculations within the density functional theory (DFT) have been addressed to study the energetic stability, and electronic properties of alkali and alkali-earth atoms adsorbed on a silicon carbide (SiC) single layer. We observe that all atoms are most stable (higher binding energy) on the top of a Si atom, which moves out of the plane (in the opposite direction to the adsorbed atom). Alkali atoms adsorbed give raise to two spin unpaired electronic levels inside the band gap leading the SiC single layer to exhibit n-type semiconductor properties. For alkaline atoms adsorbed there is a deep occupied spin paired electronic level inside the band gap. These finding suggest that the adsorption of alkaline and alkali-earth atoms on SiC layer is a powerful feature to functionalize two dimensional SiC structures, which can be used to produce new electronic, magnetic and optical devices as well for hydrogen and oxygen evolution reaction (HER and OER, respectively). Furthermore, we observe that the adsorption of H2 is ruled by dispersive forces (van der Waals interactions) while the O2 molecule is strongly adsorbed on the functionalized system.

Fast neutron detection at near-core location of a research reactor with a SiC detector

NASA Astrophysics Data System (ADS)

Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

2018-04-01

The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

Fab Four self-interaction in quantum regime

NASA Astrophysics Data System (ADS)

Arbuzov, A. B.; Latosh, B. N.

2017-10-01

Quantum behavior of the John Lagrangian from the Fab Four class of covariant Galileons is studied. We consider one-loop corrections to the John interaction due to cubic scalar field interaction. Counter terms are calculated, one appears because of massless scalar field theory infrared issues, another one lies in the George class, and the rest of them can be reduced to the initial Lagrangian up to surface terms. The role of quantum corrections in the context of cosmological applications is discussed.

Slow crack growth in SiC platelet reinforced Al{sub 2}O{sub 3} composite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belmonte, M.; Moya, J.S.; Miranzo, P.

1996-05-15

Ceramic matrix composites with enhanced toughness are at present projected for many structural applications such as high temperature components in gas turbine, structures for hypersonic aircraft and bioprosthetic devices. The incorporation of a SiC dispersed second phase in form of whisker or platelets into an alumina matrix has allowed to improve material toughness, thermal shock resistance and R-curve behavior. Recently, considerable interest in the acquisition of slow crack growth (SCG) data for ceramic materials has arisen in order to predict the service lifetime of brittle components. Non-oxide ceramics such as SiC and Si{sub 3}N{sub 4} are extremely resistant to crackmore » growth at low temperatures, whereas oxide ceramics are susceptible to stress corrosion because of the chemical interaction between water and stressed cracks. Up to date, there are not many papers devoted to SCG of SiC whiskers reinforced Al{sub 2}O{sub 3} composites and none about SiC platelets used as reinforcement. The objective of the present work has been to evaluate the slow crack growth in a Al{sub 2}O{sub 3}/SiC-platelet composite by double torsion testing analysis. The results will be compared with those obtained for SiC whisker reinforced Al{sub 2}O{sub 3} composite tested using the same conditions.« less

Barrier properties of nano silicon carbide designed chitosan nanocomposites.

PubMed

Pradhan, Gopal C; Dash, Satyabrata; Swain, Sarat K

2015-12-10

Nano silicon carbide (SiC) designed chitosan nanocomposites were prepared by solution technique. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) were used for studying structural interaction of nano silicon carbide (SiC) with chitosan. The morphology of chitosan/SiC nanocomposites was investigated by field emission scanning electron microscope (FESEM), and high resolution transmission electron microscope (HRTEM). The thermal stability of chitosan was substantially increased due to incorporation of stable silicon carbide nanopowder. The oxygen permeability of chitosan/SiC nanocomposites was reduced by three folds as compared to the virgin chitosan. The chemical resistance properties of chitosan were enhanced due to the incorporation of nano SiC. The biodegradability was investigated using sludge water. The tensile strength of chitosan/SiC nanocomposites was increased with increasing percentage of SiC. The substantial reduction in oxygen barrier properties in combination with increased thermal stability, tensile strength and chemical resistance properties; the synthesized nanocomposite may be suitable for packaging applications. Copyright © 2015 Elsevier Ltd. All rights reserved.

Ionization-induced annealing of pre-existing defects in silicon carbide

DOE PAGES

Zhang, Yanwen; Sachan, Ritesh; Pakarinen, Olli H.; ...

2015-08-12

A long-standing objective in materials research is to find innovative ways to remove preexisting damage and heal fabrication defects or environmentally induced defects in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power, high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization processes results in a highly localized thermal spike that can effectively heal preexisting defects and restore the structural order. This work revealsmore » an innovative self-healing process using highly ionizing ions, and it describes a critical aspect to be considered in modeling SiC performance as either a functional or a structural material for device applications or high-radiation environments.« less

Quantum Control and Entanglement of Spins in Silicon Carbide

NASA Astrophysics Data System (ADS)

Klimov, Paul

Over the past several decades silicon carbide (SiC) has matured into a versatile material platform for high-power electronics and optoelectronic and micromechanical devices. Recent advances have also established SiC as a promising host for quantum technologies based on the spin of intrinsic defects, with the potential of leveraging existing device fabrication protocols alongside solid-state quantum control. Among these defects are the divacancies and related color centers, which have ground-state electron-spin triplets with coherence times as long as one millisecond and built-in optical interfaces operating near the telecommunication wavelengths. This rapidly developing field has prompted research into the SiC material host to understand how defect-bound electron spins interact with their surrounding nuclear spin bath. Although nuclear spins are a major source of decoherence in color-center spin systems, they are also a valuable resource since they can have coherence times that are orders of magnitude longer than electron spins. In this talk I will discuss our recent efforts to interface defect-bound electron spins in SiC with the nuclear spins of naturally occurring 29Si and 13C isotopic defects. I will discuss how the hyperfine interaction can be used to strongly initialize them, to coherently control them, to read them out, and to produce genuine electron-nuclear ensemble entanglement, all at ambient conditions. These demonstrations motivate further research into spins in SiC for prospective quantum technologies. In collaboration with A. Falk, D. Christle, K. Miao, H. Seo, V. Ivady, A. Gali, G. Galli, and D. D. Awschalom. This research was supported by the AFOSR, the NSF DMR-1306300, and the NSF Materials Research Science and Engineering Center.

Comparison of Cardiorespiratory and Metabolic Responses in Kettlebell High-Intensity Interval Training Versus Sprint Interval Cycling.

PubMed

Williams, Brian M; Kraemer, Robert R

2015-12-01

The purpose of this study was to determine the effectiveness of a novel exercise protocol we developed for kettlebell high-intensity interval training (KB-HIIT) by comparing the cardiorespiratory and metabolic responses to a standard sprint interval cycling (SIC) exercise protocol. Eight men volunteered for the study and completed 2 preliminary sessions, followed by two 12-minute sessions of KB-HIIT and SIC in a counterbalanced fashion. In the KB-HITT session, 3 circuits of 4 exercises were performed using a Tabata regimen. In the SIC session, three 30-second sprints were performed, with 4 minutes of recovery in between the first 2 sprints and 2.5 minutes of recovery after the last sprint. A within-subjects' design over multiple time points was used to compare oxygen consumption (V[Combining Dot Above]O2), respiratory exchange ratio (RER), tidal volume (TV), breathing frequency (f), minute ventilation (VE), caloric expenditure rate (kcal·min), and heart rate (HR) between the exercise protocols. Additionally, total caloric expenditure was compared. A significant group effect, time effect, and group × time interaction were found for V[Combining Dot Above]O2, RER, and TV, with V[Combining Dot Above]O2 being higher and TV and RER being lower in the KB-HIIT compared with the SIC. Only a significant time effect and group × time interaction were found for f, VE, kcal·min, and HR. Additionally, total caloric expenditure was found to be significantly higher during the KB-HIIT. The results of this study suggest that KB-HIIT may be more attractive and sustainable than SIC and can be effective in stimulating cardiorespiratory and metabolic responses that could improve health and aerobic performance.

Better band gaps for wide-gap semiconductors from a locally corrected exchange-correlation potential that nearly eliminates self-interaction errors

DOE PAGES

Singh, Prashant; Harbola, Manoj K.; Johnson, Duane D.

2017-09-08

Here, this work constitutes a comprehensive and improved account of electronic-structure and mechanical properties of silicon-nitride (more » $${\\rm Si}_{3}$$ $${\\rm N}_{4}$$ ) polymorphs via van Leeuwen and Baerends (LB) exchange-corrected local density approximation (LDA) that enforces the exact exchange potential asymptotic behavior. The calculated lattice constant, bulk modulus, and electronic band structure of $${\\rm Si}_{3}$$ $${\\rm N}_{4}$$ polymorphs are in good agreement with experimental results. We also show that, for a single electron in a hydrogen atom, spherical well, or harmonic oscillator, the LB-corrected LDA reduces the (self-interaction) error to exact total energy to ~10%, a factor of three to four lower than standard LDA, due to a dramatically improved representation of the exchange-potential.« less

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

NASA Astrophysics Data System (ADS)

Imada, Kenta; Ishimaru, Manabu; Sato, Kazuhisa; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven; Weber, William J.

2015-10-01

Nano-engineered 3C-SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.

Electrical Resistance of Ceramic Matrix Composites for Damage Detection and Life-Prediction

NASA Technical Reports Server (NTRS)

Smith, Craig; Morscher, Gregory N.; Xia, Zhenhai

2008-01-01

The electric resistance of woven SiC fiber reinforced SiC matrix composites were measured under tensile loading conditions. The results show that the electrical resistance is closely related to damage and that real-time information about the damage state can be obtained through monitoring of the resistance. Such self-sensing capability provides the possibility of on-board/in-situ damage detection or inspection of a component during "down time". The correlation of damage with appropriate failure mechanism can then be applied to accurate life prediction for high-temperature ceramic matrix composites.

Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

NASA Astrophysics Data System (ADS)

Cochrane, Corey J.; Blacksberg, Jordana; Anders, Mark A.; Lenahan, Patrick M.

2016-11-01

Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system.

Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

PubMed Central

Cochrane, Corey J.; Blacksberg, Jordana; Anders, Mark A.; Lenahan, Patrick M.

2016-01-01

Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system. PMID:27892524

Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide.

PubMed

Cochrane, Corey J; Blacksberg, Jordana; Anders, Mark A; Lenahan, Patrick M

2016-11-28

Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system.

Skillful Spring Forecasts of September Arctic Sea Ice Extent Using Passive Microwave Data

NASA Technical Reports Server (NTRS)

Petty, A. A.; Schroder, D.; Stroeve, J. C.; Markus, Thorsten; Miller, Jeffrey A.; Kurtz, Nathan Timothy; Feltham, D. L.; Flocco, D.

2017-01-01

In this study, we demonstrate skillful spring forecasts of detrended September Arctic sea ice extent using passive microwave observations of sea ice concentration (SIC) and melt onset (MO). We compare these to forecasts produced using data from a sophisticated melt pond model, and find similar to higher skill values, where the forecast skill is calculated relative to linear trend persistence. The MO forecasts shows the highest skill in March-May, while the SIC forecasts produce the highest skill in June-August, especially when the forecasts are evaluated over recent years (since 2008). The high MO forecast skill in early spring appears to be driven primarily by the presence and timing of open water anomalies, while the high SIC forecast skill appears to be driven by both open water and surface melt processes. Spatial maps of detrended anomalies highlight the drivers of the different forecasts, and enable us to understand regions of predictive importance. Correctly capturing sea ice state anomalies, along with changes in open water coverage appear to be key processes in skillfully forecasting summer Arctic sea ice.

Wind-sea surface temperature-sea ice relationship in the Chukchi-Beaufort Seas during autumn

NASA Astrophysics Data System (ADS)

Zhang, Jing; Stegall, Steve T.; Zhang, Xiangdong

2018-03-01

Dramatic climate changes, especially the largest sea ice retreat during September and October, in the Chukchi-Beaufort Seas could be a consequence of, and further enhance, complex air-ice-sea interactions. To detect these interaction signals, statistical relationships between surface wind speed, sea surface temperature (SST), and sea ice concentration (SIC) were analyzed. The results show a negative correlation between wind speed and SIC. The relationships between wind speed and SST are complicated by the presence of sea ice, with a negative correlation over open water but a positive correlation in sea ice dominated areas. The examination of spatial structures indicates that wind speed tends to increase when approaching the ice edge from open water and the area fully covered by sea ice. The anomalous downward radiation and thermal advection, as well as their regional distribution, play important roles in shaping these relationships, though wind-driven sub-grid scale boundary layer processes may also have contributions. Considering the feedback loop involved in the wind-SST-SIC relationships, climate model experiments would be required to further untangle the underlying complex physical processes.

Adapting physics courses in an engineering school to the b-learning philosophy

NASA Astrophysics Data System (ADS)

Borondo, J.; Benito, R. M.; Losada, J. C.

2014-09-01

In this paper we introduce the methodology that we have followed to convert traditional notes into interactive online materials. The idea behind this has been to make self-consistent and interactive online materials capable of motivating the students to get involved in the learning process. For this purpose, we have used the e-learning environment Moodle, which is a platform with a high interactivity potential. We conclude that the academic performance reaches its maximum when correctly combining self-organising with minimum teacher guidance.

Effect of different thickness crystalline SiC buffer layers on the ordering of MgB{sub 2} films probed by extended x-ray absorption fine structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Putri, W. B. K.; Tran, D. H.; Kang, B., E-mail: bwkang@chungbuk.ac.kr

2014-03-07

Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB{sub 2} films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited on the Al{sub 2}O{sub 3} (0001) substrates by using a pulsed laser deposition method, and then MgB{sub 2} films were grown on the SiC buffer layer by using a hybrid physical-chemical vapor deposition technique. Transition temperature of MgB{sub 2} film decreased with increasing thickness of SiC buffer layer. However, the T{sub c} droppingmore » went no farther than 100 nm-thick-SiC. This uncommon behavior of transition temperature is likely to be created from electron-phonon interaction in MgB{sub 2} films, which is believed to be related to the ordering of MgB{sub 2} atomic bonds, especially in the ordering of Mg–Mg bonds. Analysis from Mg K-edge EXAFS measurements showed interesting ordering behavior of MgB{sub 2} films. It is noticeable that the ordering of Mg–B bonds is found to decrease monotonically with the increase in SiC thickness of the MgB{sub 2} films, while the opposite happens with the ordering in Mg–Mg bonds. Based on these results, crystalline SiC buffer layers in MgB{sub 2} films seemingly have evident effects on the alteration of the local structure of the MgB{sub 2} film.« less

High Temperature Lightweight Self-Healing Ceramic Composites for Aircraft Engine Applications

NASA Technical Reports Server (NTRS)

Raj, Sai V.; Singh, Mrityunjay; Bhatt, Ramakrishna T.

2014-01-01

The present research effort was undertaken to develop a new generation of SiC fiber- reinforced engineered matrix composites (EMCs) with sufficient high temperature plasticity to reduce crack propagation and self-healing capabilities to fill surface-connected cracks to prevent the oxygen ingress to the fibers. A matrix engineered with these capabilities is expected to increase the load bearing capabilities of SiCSiC CMCs at high temperatures. Several matrix compositions were designed to match the coefficient of thermal expansion (CTE) of the SiC fibers using a rule of mixture (ROM) approach. The CTE values of these matrices were determined and it was demonstrated that they were generally in good agreement with that of monolithic SiC between room temperature and 1525 K. The parameters to hot press the powders were optimized, and specimens were fabricated for determining bend strength, CTE, oxidation and microstructural characteristics of the engineered matrices. The oxidation tests revealed that some of the matrices exhibited catastrophic oxidation, and therefore, these were eliminated from further consideration. Two promising compositions were down selected based on these results for further development. Four-point bend tests were conducted on these two promising matrices between room temperature and 1698 K. Although theses matrices were brittle and failed at low stresses at room temperature, they exhibited high temperature ductility and higher stresses at the higher temperatures. The effects of different additives on the self-healing capabilities of these matrices were investigated. The results of preliminary studies conducted to slurry and melt infiltration trials with CrSi2 are described.

Correlations among self-esteem, aggression, adverse childhood experiences and depression in inmates of a female juvenile correctional facility in Japan.

PubMed

Matsuura, Naomi; Hashimoto, Toshiaki; Toichi, Motomi

2009-08-01

The purpose of this study was to examine the following hypothesis: (i) Self-esteem and aggressiveness, adverse childhood experiences (ACE), and a depressive tendency interact with each other. (ii) The subjects show a strong depressive tendency, and each of the other factors exerts a main effect on, and interacts with, the depressive tendency. The subjects were 91 juveniles (all female) admitted to a female juvenile correctional facility between November 2005 and December 2006. They were aged 15-19 years, with a mean age of 17.0 (SD = 1.18) years. Self-esteem scale, aggression scale, ACE questionnaire, and depression scale were conducted. Significant main effects (R(2) = 0.50, P < 0.001) on the depression score were observed in self-esteem (beta = -0.41, P < 0.001) and aggression (beta = 0.21, P < 0.05). Self-esteem, aggression, ACE, and depression were found to be interrelated. Low self-esteem was also shown to exert marked effects on various factors. About half of the inmates of the facility were depressed, and the main effects of self-esteem, aggression, and the ACE score were shown to influence the depression score.

Inverse design of multicomponent assemblies

NASA Astrophysics Data System (ADS)

Piñeros, William D.; Lindquist, Beth A.; Jadrich, Ryan B.; Truskett, Thomas M.

2018-03-01

Inverse design can be a useful strategy for discovering interactions that drive particles to spontaneously self-assemble into a desired structure. Here, we extend an inverse design methodology—relative entropy optimization—to determine isotropic interactions that promote assembly of targeted multicomponent phases, and we apply this extension to design interactions for a variety of binary crystals ranging from compact triangular and square architectures to highly open structures with dodecagonal and octadecagonal motifs. We compare the resulting optimized (self- and cross) interactions for the binary assemblies to those obtained from optimization of analogous single-component systems. This comparison reveals that self-interactions act as a "primer" to position particles at approximately correct coordination shell distances, while cross interactions act as the "binder" that refines and locks the system into the desired configuration. For simpler binary targets, it is possible to successfully design self-assembling systems while restricting one of these interaction types to be a hard-core-like potential. However, optimization of both self- and cross interaction types appears necessary to design for assembly of more complex or open structures.

Development of Technology Transfer Economic Growth Metrics

NASA Technical Reports Server (NTRS)

Mastrangelo, Christina M.

1998-01-01

The primary objective of this project is to determine the feasibility of producing technology transfer metrics that answer the question: Do NASA/MSFC technical assistance activities impact economic growth? The data for this project resides in a 7800-record database maintained by Tec-Masters, Incorporated. The technology assistance data results from survey responses from companies and individuals who have interacted with NASA via a Technology Transfer Agreement, or TTA. The goal of this project was to determine if the existing data could provide indications of increased wealth. This work demonstrates that there is evidence that companies that used NASA technology transfer have a higher job growth rate than the rest of the economy. It also shows that the jobs being supported are jobs in higher wage SIC codes, and this indicates improvements in personal wealth. Finally, this work suggests that with correct data, the wealth issue may be addressed.

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

DOE PAGES

Imada, Kenta; Ishimaru, Manabu; Sato, Kazuhisa; ...

2015-06-18

In this paper, nano-engineered 3C–SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. Finally, the resultant strain fieldmore » probably contributes to the enhancement of radiation tolerance of this material.« less

Graded junction termination extensions for electronic devices

NASA Technical Reports Server (NTRS)

Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

2006-01-01

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Graded junction termination extensions for electronic devices

NASA Technical Reports Server (NTRS)

Merrett, J. Neil (Inventor); Isaacs-Smith, Tamara (Inventor); Sheridan, David C. (Inventor); Williams, John R. (Inventor)

2007-01-01

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

A proposal for self-correcting stabilizer quantum memories in 3 dimensions (or slightly less)

NASA Astrophysics Data System (ADS)

Brell, Courtney G.

2016-01-01

We propose a family of local CSS stabilizer codes as possible candidates for self-correcting quantum memories in 3D. The construction is inspired by the classical Ising model on a Sierpinski carpet fractal, which acts as a classical self-correcting memory. Our models are naturally defined on fractal subsets of a 4D hypercubic lattice with Hausdorff dimension less than 3. Though this does not imply that these models can be realized with local interactions in {{{R}}}3, we also discuss this possibility. The X and Z sectors of the code are dual to one another, and we show that there exists a finite temperature phase transition associated with each of these sectors, providing evidence that the system may robustly store quantum information at finite temperature.

Supersymmetric Dirac Born Infeld action with self-dual mass term

NASA Astrophysics Data System (ADS)

Nishino, Hitoshi; Rajpoot, Subhash; Reed, Kevin

2005-05-01

We introduce a Dirac Born Infeld action to a self-dual N = 1 supersymmetric vector multiplet in three dimensions. This action is based on the supersymmetric generalized self-duality in odd dimensions developed originally by Townsend, Pilch and van Nieuwenhuizen. Even though such a self-duality had been supposed to be very difficult to generalize to a supersymmetrically interacting system, we show that the Dirac Born Infeld action is actually compatible with supersymmetry and self-duality in three dimensions, even though the original self-duality receives corrections by the Dirac Born Infeld action. The interactions can be further generalized to arbitrary (non)polynomial interactions. As a by-product, we also show that a third-rank field strength leads to a more natural formulation of self-duality in 3D. We also show an interesting role played by the third-rank field strength leading to supersymmetry breaking, in addition to accommodating a Chern Simons form.

Towards self-correcting quantum memories

NASA Astrophysics Data System (ADS)

Michnicki, Kamil

This thesis presents a model of self-correcting quantum memories where quantum states are encoded using topological stabilizer codes and error correction is done using local measurements and local dynamics. Quantum noise poses a practical barrier to developing quantum memories. This thesis explores two types of models for suppressing noise. One model suppresses thermalizing noise energetically by engineering a Hamiltonian with a high energy barrier between code states. Thermalizing dynamics are modeled phenomenologically as a Markovian quantum master equation with only local generators. The second model suppresses stochastic noise with a cellular automaton that performs error correction using syndrome measurements and a local update rule. Several ways of visualizing and thinking about stabilizer codes are presented in order to design ones that have a high energy barrier: the non-local Ising model, the quasi-particle graph and the theory of welded stabilizer codes. I develop the theory of welded stabilizer codes and use it to construct a code with the highest known energy barrier in 3-d for spin Hamiltonians: the welded solid code. Although the welded solid code is not fully self correcting, it has some self correcting properties. It has an increased memory lifetime for an increased system size up to a temperature dependent maximum. One strategy for increasing the energy barrier is by mediating an interaction with an external system. I prove a no-go theorem for a class of Hamiltonians where the interaction terms are local, of bounded strength and commute with the stabilizer group. Under these conditions the energy barrier can only be increased by a multiplicative constant. I develop cellular automaton to do error correction on a state encoded using the toric code. The numerical evidence indicates that while there is no threshold, the model can extend the memory lifetime significantly. While of less theoretical importance, this could be practical for real implementations of quantum memories. Numerical evidence also suggests that the cellular automaton could function as a decoder with a soft threshold.

A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

NASA Astrophysics Data System (ADS)

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

2018-02-01

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

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Federal Register 2010, 2011, 2012, 2013, 2014

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The Effect of Grain Size on the Radiation Response of Silicon Carbide and its Dependence on Irradiation Species and Temperature

NASA Astrophysics Data System (ADS)

Jamison, Laura

In recent years the push for green energy sources has intensified, and as part of that effort accident tolerant and more efficient nuclear reactors have been designed. These reactors demand exceptional material performance, as they call for higher temperatures and doses. Silicon carbide (SiC) is a strong candidate material for many of these designs due to its low neutron cross-section, chemical stability, and high temperature resistance. The possibility of improving the radiation resistance of SiC by reducing the grain size (thus increasing the sink density) is explored in this work. In-situ electron irradiation and Kr ion irradiation was utilized to explore the radiation resistance of nanocrystalline SiC (nc-SiC), SiC nanopowders, and microcrystalline SiC. Electron irradiation simplifies the experimental results, as only isolated Frenkel pairs are produced so any observed differences are simply due to point defect interactions with the original microstructure. Kr ion irradiation simulates neutron damage, as large radiation cascades with a high concentration of point defects are produced. Kr irradiation studies found that radiation resistance decreased with particle size reduction and grain refinement (comparing nc-SiC and microcrystalline SiC). This suggests that an interface-dependent amorphization mechanism is active in SiC, suggested to be interstitial starvation. However, under electron irradiation it was found that nc-SiC had improved radiation resistance compared to single crystal SiC. This was found to be due to several factors including increased sink density and strength and the presence of stacking faults. The stacking faults were found to improve radiation response by lowering critical energy barriers. The change in radiation response between the electron and Kr ion irradiations is hypothesized to be due to either the change in ion type (potential change in amorphization mechanism) or a change in temperature (at the higher temperatures of the Kr ion irradiation, critical energy barriers can be overcome without the assistance of stacking faults). The dependence of the radiation response of SiC on grain size is not as straight forward as initially presumed. The stacking faults present in many nc-SiC materials boost radiation resistance, but an increased number of interfaces may lead to a reduction in radiation response.

Ba isotopic compositions in stardust SiC grains from the Murchison meteorite: Insights into the stellar origins of large SiC grains

NASA Astrophysics Data System (ADS)

Ávila, Janaína N.; Ireland, Trevor R.; Gyngard, Frank; Zinner, Ernst; Mallmann, Guilherme; Lugaro, Maria; Holden, Peter; Amari, Sachiko

2013-11-01

We report barium isotopic measurements in 12 large (7-58 μm) stardust silicon carbide grains recovered from the Murchison carbonaceous chondrite. The C-, N-, and Si-isotopic compositions indicate that all 12 grains belong to the mainstream population and, as such, are interpreted to have condensed in the outflows of low-mass carbon-rich asymptotic giant branch (AGB) stars with close-to-solar metallicity. Barium isotopic analyses were carried out on the Sensitive High Resolution Ion Microprobe - Reverse Geometry (SHRIMP-RG) with combined high mass resolution and energy filtering to eliminate isobaric interferences from molecular ions. Contrary to previous measurements in small (<5 μm) mainstream grains, the analyzed large SiC grains do not show the classical s-process enrichment, having near solar Ba isotopic compositions. While contamination with solar material is a common explanation for the lack of large isotopic anomalies in stardust SiC grains, particularly for these large grains which have low trace element abundances, our results are consistent with previous observations that Ba isotopic ratios are dependent on grain size. We have compared the SiC data with theoretical predictions of the evolution of Ba isotopic ratios in the envelopes of low-mass AGB stars with a range of stellar masses and metallicities. The Ba isotopic measurements obtained for large SiC grains from the LS + LU fractions are consistent with grain condensation in the envelope of very low-mass AGB stars (1.25 M⊙) with close-to-solar metallicity, which suggests that conditions for growth of large SiC might be more favorable in very low-mass AGB stars during the early C-rich stages of AGB evolution or in stable structures around AGB stars whose evolution was cut short due to binary interaction, before the AGB envelope had already been largely enriched with the products of s-process nucleosynthesis.

An audit of the knowledge and attitudes of doctors towards Surgical Informed Consent (SIC).

PubMed

Ashraf, Bushra; Tasnim, Nasira; Saaiq, Muhammad; Zaman, Khaleeq-Uz-

2014-11-01

The Surgical Informed Consent (SIC) is a comprehensive process that establishes an information-based agreement between the patient and his doctor to undertake a clearly outlined medical or surgical intervention. It is neither a casual formality nor a casually signed piece of paper. The present study was designed to audit the current knowledge and attitudes of doctors towards SIC at a tertiary care teaching hospital in Pakistan. This cross-sectional qualitative investigation was conducted under the auspices of the Department of Medical Education (DME), Pakistan Institute of Medical Sciences (PIMS), Shaheed Zulfiqar Ali Bhutto Medical University (SZABMU), Islamabad over three months period. A 19-item questionnaire was employed for data collection. The participants were selected at random from the list of the surgeons maintained in the hospital and approached face-to-face with the help of a team of junior doctors detailed for questionnaire distribution among them. The target was to cover over 50% of these doctors by convenience sampling. Out of 231 respondents, there were 32 seniors while 199 junior doctors, constituting a ratio of 1:6.22. The respondents variably responded to the questions regarding various attributes of the process of SIC. Overall, the junior doctors performed poorer compared to the seniors. The knowledge and attitudes of our doctors particularly the junior ones, towards the SIC are less than ideal. This results in their failure to avail this golden opportunity of doctor-patient communication to guide their patients through a solidly informative and legally valid SIC. They are often unaware of the essential preconditions of the SIC; provide incomplete information to their patients; and quite often do not ensure direct involvement of their patients in the process. Additionally they lack an understanding of using interactive computer-based programs as well as the concept of nocebo effect of informed consent.

On the relation between orbital-localization and self-interaction errors in the density functional theory treatment of organic semiconductors.

PubMed

Körzdörfer, T

2011-03-07

It is commonly argued that the self-interaction error (SIE) inherent in semilocal density functionals is related to the degree of the electronic localization. Yet at the same time there exists a latent ambiguity in the definitions of the terms "localization" and "self-interaction," which ultimately prevents a clear and readily accessible quantification of this relationship. This problem is particularly pressing for organic semiconductor molecules, in which delocalized molecular orbitals typically alternate with localized ones, thus leading to major distortions in the eigenvalue spectra. This paper discusses the relation between localization and SIEs in organic semiconductors in detail. Its findings provide further insights into the SIE in the orbital energies and yield a new perspective on the failure of self-interaction corrections that identify delocalized orbital densities with electrons. © 2011 American Institute of Physics.

Biological effects of contaminated silicon carbide particles from a workstation in a plant producing abrasives.

PubMed

Governa, M; Valentino, M; Amati, M; Visonà, I; Botta, G C; Marcer, G; Gemignani, C

1997-06-01

A sample of silicon carbide dust taken in the field from a plant producing abrasives was studied in vitro. The SiC particles (part unmilled and part milled) were able to disturb the structure of erythrocyte membranes and to lead to blood red-cell lysis; they also either interfered with complement and activated the alternate pathway, or interacted with biological media and polymorphonuclear leucocyte membranes, thus eliciting reactive oxygen species production. These in vitro properties were detected both in original large particles and unmilled particles, over 40% of which were of respirable size. The ability of these SiC particles to produce complement activation in vitro lends support to the previous hypothesis, that the radiographic opacities found in two workers employed in the same area of the plant from which the dust tested was taken are due to a reaction by pulmonary interstitial structures to SiC particle inhalation. It is speculated that SiC particles could act like asbestos, the ability of which to activate complement through the alternate pathway is considered to be one of the mechanisms by which the initial asbestotic lesions and subsequent fibrotic inflammatory infiltrates are generated in the lung.

Silicon carbide at nanoscale: Finite single-walled to "infinite" multi-walled tubes

NASA Astrophysics Data System (ADS)

Adhikari, Kapil

A systematic ab initio study of silicon carbide (SiC) nanostructures, especially finite single-walled, infinite double- and multi-walled nanotubes and nanocones is presented. Electronic and structural properties of all these nanostructures have been calculated using hybrid density functionals (B3LYP and PBE0) as implemented in the GAUSSIAN 03/09 suite of software. The unusual dependence of band gap of silicon carbide nanotubes (SiCNT) has been explained as a direct consequence of curvature effect on the ionicity of the bonds. The study of fullerene hemisphere capped, finite SiC nanotubes indicates that the carbon-capped SiC nanotubes are energetically more preferred than silicon-capped finite or hydrogen terminated infinite nanotubes. Capping a nanotube by fullerene hemisphere reduces its band gap. SiC nanocones have also been investigated as possible cap structures of nanotubes. Electronic properties of the nanocones are found to be strongly dependent upon their tip and edge structures, with possible interesting applications in surface science. Three types of double-walled SiCNTs (n, n)@(m, m) (3 ≤ n ≤ 6 ; 7 ≤ m ≤ 12) have been studied using the finite cluster approximation. The stabilities of these nanotubes are of the same order as those of the single-walled SiC nanotubes and it should be experimentally possible to synthesize both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes and their types. A study of binding energies, Mulliken charges, density of states and HOMO-LUMO gaps has been performed for all nanotubes from (n, n)@(n+3,n+3) to (n, n)@(n+6, n+6) (n=3-6). Evolution of band gaps of the SiCNTs with increase in the number of walls has also been investigated. The nature of interaction between transition metal atoms and silicon carbide nanotubes with different curvature has also been investigated. The curvature of the nanotubes affects the nature of the interaction between the nanotubes and the transition teal atoms. Our study of functionalized SiCNTs by 3d transition metal atoms indicates that these nanostructures can have possible applications in spintronics and nano-magnetic storage.

76 FR 40761 - Self-Regulatory Organizations; NASDAQ OMX BX, Inc.; Notice of Filing and Immediate Effectiveness...

Federal Register 2010, 2011, 2012, 2013, 2014

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Fission product palladium-silicon carbide interaction in htgr fuel particles

NASA Astrophysics Data System (ADS)

Minato, Kazuo; Ogawa, Toru; Kashimura, Satoru; Fukuda, Kousaku; Shimizu, Michio; Tayama, Yoshinobu; Takahashi, Ishio

1990-07-01

Interaction of fission product palladium (Pd) with the silicon carbide (SiC) layer was observed in irradiated Triso-coated uranium dioxide particles for high temperature gas-cooled reactors (HTGR) with an optical microscope and electron probe microanalyzers. The SiC layers were attacked locally or the reaction product formed nodules at the attack site. Although the main element concerned with the reaction was palladium, rhodium and ruthenium were also detected at the corroded areas in some particles. Palladium was detected on both the hot and cold sides of the particles, but the corroded areas and the palladium accumulations were distributed particularly on the cold side of the particles. The observed Pd-SiC reaction depths were analyzed on the assumption that the release of palladium from the fuel kernel controls the whole Pd-SiC reaction.

Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C.

PubMed

Pan, Yu; Aydemir, Umut; Sun, Fu-Hua; Wu, Chao-Feng; Chasapis, Thomas C; Snyder, G Jeffrey; Li, Jing-Feng

2017-11-01

Bi 2 Te 3 thermoelectric materials are utilized for refrigeration for decades, while their application of energy harvesting requires stable thermoelectric and mechanical performances at elevated temperatures. This work reveals that a steady zT of ≈0.85 at 200 to 300 °C can be achieved by doping small amounts of copper iodide (CuI) in Bi 2 Te 2.2 Se 0.8 -silicon carbide (SiC) composites, where SiC nanodispersion enhances the flexural strength. It is found that CuI plays two important roles with atomic Cu/I dopants and CuI precipitates. The Cu/I dopants show a self-tuning behavior due to increasing solubility with increasing temperatures. The increased doping concentration increases electrical conductivity at high temperatures and effectively suppresses the intrinsic excitation. In addition, a large reduction of lattice thermal conductivity is achieved due to the "in situ" CuI nanoprecipitates acting as phonon-scattering centers. Over 60% reduction of bipolar thermal conductivity is achieved, raising the maximum useful temperature of Bi 2 Te 3 for substantially higher efficiency. For module applications, the reported materials are suitable for segmentation with a conventional ingot. This leads to high device ZT values of ≈0.9-1.0 and high efficiency up to 9.2% from 300 to 573 K, which can be of great significance for power generation from waste heat.

Design of a single-chain polypeptide tetrahedron assembled from coiled-coil segments.

PubMed

Gradišar, Helena; Božič, Sabina; Doles, Tibor; Vengust, Damjan; Hafner-Bratkovič, Iva; Mertelj, Alenka; Webb, Ben; Šali, Andrej; Klavžar, Sandi; Jerala, Roman

2013-06-01

Protein structures evolved through a complex interplay of cooperative interactions, and it is still very challenging to design new protein folds de novo. Here we present a strategy to design self-assembling polypeptide nanostructured polyhedra based on modularization using orthogonal dimerizing segments. We designed and experimentally demonstrated the formation of the tetrahedron that self-assembles from a single polypeptide chain comprising 12 concatenated coiled coil-forming segments separated by flexible peptide hinges. The path of the polypeptide chain is guided by a defined order of segments that traverse each of the six edges of the tetrahedron exactly twice, forming coiled-coil dimers with their corresponding partners. The coincidence of the polypeptide termini in the same vertex is demonstrated by reconstituting a split fluorescent protein in the polypeptide with the correct tetrahedral topology. Polypeptides with a deleted or scrambled segment order fail to self-assemble correctly. This design platform provides a foundation for constructing new topological polypeptide folds based on the set of orthogonal interacting polypeptide segments.

The Effect Of Different Corrective Feedback Methods on the Outcome and Self Confidence of Young Athletes

PubMed Central

Tzetzis, George; Votsis, Evandros; Kourtessis, Thomas

2008-01-01

This experiment investigated the effects of three corrective feedback methods, using different combinations of correction, or error cues and positive feedback for learning two badminton skills with different difficulty (forehand clear - low difficulty, backhand clear - high difficulty). Outcome and self-confidence scores were used as dependent variables. The 48 participants were randomly assigned into four groups. Group A received correction cues and positive feedback. Group B received cues on errors of execution. Group C received positive feedback, correction cues and error cues. Group D was the control group. A pre, post and a retention test was conducted. A three way analysis of variance ANOVA (4 groups X 2 task difficulty X 3 measures) with repeated measures on the last factor revealed significant interactions for each depended variable. All the corrective feedback methods groups, increased their outcome scores over time for the easy skill, but only groups A and C for the difficult skill. Groups A and B had significantly better outcome scores than group C and the control group for the easy skill on the retention test. However, for the difficult skill, group C was better than groups A, B and D. The self confidence scores of groups A and C improved over time for the easy skill but not for group B and D. Again, for the difficult skill, only group C improved over time. Finally a regression analysis depicted that the improvement in performance predicted a proportion of the improvement in self confidence for both the easy and the difficult skill. It was concluded that when young athletes are taught skills of different difficulty, different type of instruction, might be more appropriate in order to improve outcome and self confidence. A more integrated approach on teaching will assist coaches or physical education teachers to be more efficient and effective. Key pointsThe type of the skill is a critical factor in determining the effectiveness of the feedback types.Different instructional methods of corrective feedback could have beneficial effects in the outcome and self-confidence of young athletesInstructions focusing on the correct cues or errors increase performance of easy skills.Positive feedback or correction cues increase self-confidence of easy skills but only the combination of error and correction cues increase self confidence and outcome scores of difficult skills. PMID:24149905

Extraction method of interfacial injected charges for SiC power MOSFETs

NASA Astrophysics Data System (ADS)

Wei, Jiaxing; Liu, Siyang; Li, Sheng; Song, Haiyang; Chen, Xin; Li, Ting; Fang, Jiong; Sun, Weifeng

2018-01-01

An improved novel extraction method which can characterize the injected charges along the gate oxide interface for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. According to the different interface situations of the channel region and the junction FET (JFET) region, the gate capacitance versus gate voltage (Cg-Vg) curve of the device can be divided into three relatively independent parts, through which the locations and the types of the charges injected in to the oxide above the interface can be distinguished. Moreover, the densities of these charges can also be calculated by the amplitudes of the shifts in the Cg-Vg curve. The correctness of this method is proved by TCAD simulations. Moreover, experiments on devices stressed by unclamped-inductive-switching (UIS) stress and negative bias temperature stress (NBTS) are performed to verify the validity of this method.

Fracture resistance measurement of advanced ceramics at elevated-temperatures using Chevron-notched specimens and other novel techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jenkins, M.G.

1995-12-31

The quasi-static fracture behavior of advanced ceramics was assessed in the temperature range of 20{degrees} to 1400{degrees}C. Chevron-notched, three-point flexure specimens and a laser-based CMOD measurement systems were used in testing. Types of materials characterized included monolithic ceramics (SiC, Si{sub 3}N{sub 4}, MgAl{sub 2}O{sub 4}), self-reinforced monoliths (acicular-grained Si{sub 3}N{sub 4}, acicular grained mullite), and ceramic matrix composites (SiC whisker/Al{sub 2}O{sub 3} matrix, TiB{sub 2} particulate/SiC matrix, SiC fibre/CVI SiC matrix, Al{sub 2}O{sub 3} fibre/CVI SiC matrix). Fracture resistance behaviour of the materials was quantified as three distinct regimes of the fracture histories. At crack initiation, the apparent fracture toughnessmore » was evaluated as the critical stress intensity factor, K{sub IC}. During stable crack propagation, the crack growth resistance was characterized by the instantaneous strain energy release rate, G{sub R} using a compliance method assuming linear-elastic unloading to calculate the effective crack lengths. At final fracture, the complete fracture process was quantified using the work-of-fracture, WOF, which can be equated to the fracture surface energy for linearelastic materials. Results indicate that the chevron-notched, three-point flexure specimen facilitates the study of fracture behavior in a wide range of brittle and quasi-brittle materials at elevated temperatures. The unique features of the chevron geometry, which are automatic, in-situ crack initiation and inherent stable crack growth, are crucial to the successful evaluation of the fracture tests.« less

NASA Sea Ice Validation Program for the Defense Meteorological Satellite Program Special Sensor Microwave Imager

NASA Technical Reports Server (NTRS)

Cavalieri, Donald J. (Editor); Crawford, John P.; Drinkwater, Mark R.; Emery, William J.; Eppler, Duane T.; Farmer, L. Dennis; Fowler, Charles W.; Goodberlet, Mark; Jentz, Robert R.; Milman, Andrew

1992-01-01

The history of the program is described along with the SSM/I sensor, including its calibration and geolocation correction procedures used by NASA, SSM/I data flow, and the NASA program to distribute polar gridded SSM/I radiances and sea ice concentrations (SIC) on CD-ROMs. Following a discussion of the NASA algorithm used to convert SSM/I radiances to SICs, results of 95 SSM/I-MSS Landsat IC comparisons for regions in both the Arctic and the Antarctic are presented. The Landsat comparisons show that the overall algorithm accuracy under winter conditions is 7 pct. on average with 4 pct. negative bias. Next, high resolution active and passive microwave image mosaics from coordinated NASA and Navy aircraft underflights over regions of the Beaufort and Chukchi seas in March 1988 were used to show that the algorithm multiyear IC accuracy is 11 pct. on average with a positive bias of 12 pct. Ice edge crossings of the Bering Sea by the NASA DC-8 aircraft were used to show that the SSM/I 15 pct. ice concentration contour corresponds best to the location of the initial bands at the ice edge. Finally, a summary of results and recommendations for improving the SIC retrievals from spaceborne radiometers are provided.

Fast Solar Polarimeter: Prototype Characterization and First Results

NASA Astrophysics Data System (ADS)

Iglesias, F. A.; Feller, A.; Krishnappa, N.; Solanki, S. K.

2016-04-01

Due to the differential and non-simultaneous nature of polarization measurements, seeing induced crosstalk (SIC) and seeing limited spatial resolution can easily counterbalance the benefits of solar imaging polarimetry from the ground. The development of instrumental techniques to treat these issues is necessary to fully exploit the next generation of large-aperture solar facilities, and maintain ground-based data at a competitive level with respect to its space-based counterpart. In particular, considering that many open questions in modern solar physics demand data with challenging specifications of resolution and polarimetric sensitivity that can only be achieved with large telescope apertures (Stenflo 1999). Even if state-of-the-art adaptive optics systems greatly improve image quality, their limited correction —due to finite bandwidth, mode number and seeing anisoplanat- ism— produces large residual values of SIC (Krishnappa & Feller 2012). Dual beam polarimeters are commonly used to reduce SIC between the intensity and polarization signals, however, they cannot compensate for the SIC introduced between circular and linear polarization, which can be relevant for high-precision polarimetry. It is known that fast modulation effectively reduces SIC, but the demodulation of the corresponding intensity signals imposes hard requirements on the frame rate of the associated cameras. One way to avoid a fast sensor, is to decouple the camera readout from the intensity demodulation step. This concept is the cornerstone of the very successful Zurich Imaging Polarimeter (ZIMPOL). Even though the ZIMPOL solution allows the detection of very faint signals (˜10-5), its design is not suitable for high-spatial-resolution applications. We are developing a polarimeter that focuses on both spatial resolution (<0.5 arcsec) and polarimetric sensitivity (10-4). The prototype of this Fast Solar Polarimeter (FSP, see Feller et al. 2014), employs a high frame-rate (400 fps), low-noise (<4 e- RMS), pnCCD camera (Hartmann et al. 2006) that is read in synchronization with a polarization modulator based on ferroelectric liquid crystals. The modulator package is similar to the SOLIS (Keller et al. 2003) design and optimized to have an achromatic total polarimetric efficiency above 80 % in the 400-700 nm wavelength range. The fast modulation frequency of FSP, yielding up to 100 full-Stokes measurements per second, and high duty cycle (>95%), have the double benefit of reducing seeing induced artifacts and improving the final spatial resolution by providing an optimal regime for the application of post-facto image reconstruction techniques. In this poster we describe the FSP prototype, including the characterization results, a technique to correct image smearing due to the sensor frame transfer (Iglesias et al. 2015) and some of the first measurements obtained with the 68-cm Vacuum Tower Telescope located at the Observatorio del Teide, Spain.

Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayu Aji, L. B.; Wallace, J. B.; Shao, L.

Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC

DOE PAGES

Bayu Aji, L. B.; Wallace, J. B.; Shao, L.; ...

2016-04-14

Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.

The Abundance of SiC2 in Carbon Star Envelopes: Evidence that SiC2 is a gas-phase precursor of SiC dust.

PubMed

Massalkhi, Sarah; Agúndez, M; Cernicharo, J; Velilla Prieto, L; Goicoechea, J R; Quintana-Lacaci, G; Fonfría, J P; Alcolea, J; Bujarrabal, V

2018-03-01

Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC 2 , SiC, and Si 2 C. To date, the ring molecule SiC 2 has been observed in a handful of evolved stars, while SiC and Si 2 C have only been detected in the C-star envelope IRC +10216. We aim to study how widespread and abundant SiC 2 , SiC, and Si 2 C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC 2 , SiC, and Si 2 C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC 2 and to derive SiC 2 fractional abundances in the observed envelopes. We detect SiC 2 in most of the sources, SiC in about half of them, and do not detect Si 2 C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC 2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC 2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC 2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC 2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. The observed behavior of a decline in the SiC 2 abundance with increasing density strongly suggests that SiC 2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars.

Dispersion of SiC nanoparticles in cellulose for study of tensile, thermal and oxygen barrier properties.

PubMed

Kisku, Sudhir K; Dash, Satyabrata; Swain, Sarat K

2014-01-01

Cellulose/silicon carbide (cellulose/SiC) nanobiocomposites were prepared by solution technique. The interaction of SiC nanoparticles with cellulose were confirmed by Fourier transformed infrared (FTIR) spectroscopy. The structure of cellulose/SiC nanobiocomposites was investigated by X-ray diffraction (XRD), and transmission electron microscopy (TEM). The tensile properties of the nanobiocomposites were improved as compared with virgin cellulose. Thermal stabilities of cellulose/SiC nanobiocomposites were studied by thermogravimetric analysis (TGA). The cellulose/SiC nanobiocomposites were thermally more stable than the raw cellulose. It may be due to the delamination of SiC with cellulose matrix. The oxygen barrier properties of cellulose composites were measured using gas permeameter. A substantial reduction in oxygen permeability was obtained with increase in silicon carbide concentrations. The thermally resistant and oxygen barrier properties of the prepared nanobiocomposites may enable the materials for the packaging applications. Copyright © 2013 Elsevier Ltd. All rights reserved.

Dielectric constant extraction of graphene nanostructured on SiC substrates from spectroscopy ellipsometry measurement using Gauss–Newton inversion method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maulina, Hervin; Santoso, Iman, E-mail: iman.santoso@ugm.ac.id; Subama, Emmistasega

2016-04-19

The extraction of the dielectric constant of nanostructured graphene on SiC substrates from spectroscopy ellipsometry measurement using the Gauss-Newton inversion (GNI) method has been done. This study aims to calculate the dielectric constant and refractive index of graphene by extracting the value of ψ and Δ from the spectroscopy ellipsometry measurement using GNI method and comparing them with previous result which was extracted using Drude-Lorentz (DL) model. The results show that GNI method can be used to calculate the dielectric constant and refractive index of nanostructured graphene on SiC substratesmore faster as compared to DL model. Moreover, the imaginary partmore » of the dielectric constant values and coefficient of extinction drastically increases at 4.5 eV similar to that of extracted using known DL fitting. The increase is known due to the process of interband transition and the interaction between the electrons and electron-hole at M-points in the Brillouin zone of graphene.« less

Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy

DTIC Science & Technology

2003-03-01

conformally coated with SiC[2]...........................4 2.1: Silicon carbide grinding stones or “carborundum” [1...open up contact areas to SiC-2 (mask SiC2_SiC3_VIA). Then, a 1.5 µm- thick SiC “cap” layer (SiC-3) is deposited. Note that the SiC-3 conformally coats ...84 5.2: Surface profile across the teeth of a SiC3 comb drive...........................................85 xi

Street music or the blues? The lived experience and social environment of depression.

PubMed

Poslusny, S M

2000-01-01

Life's complexity is a haunting melody of continuously interacting variables .... Professional practice in nursing seeks to promote symphonic interaction between man [sic] and environment. . . (Rogers, 1970, pp. 41, 122). The purpose of this phenomenological study was to explore the lived experience of clinical depression for women in the context of their social relations and environment. Twelve ethnically diverse female friend dyads were interviewed and completed the Beck Depression Inventory (BDI). Seventeen of these women had experienced a major depression in the past or were in treatment for clinical depression at the time of the study. This depression was characterized by dissonance experienced in childhood abuse and incest, uncontrollable moods despite self-medication, abusive or negligent therapy, failed social relationships in adulthood, and a lack of resources in the environment. In contrast, seven healthy women described their social environment as generally resonant and connected. Prevention of childhood abuse and racism, relief from economic hardships, early diagnosis, and safe, effective treatment are essential in helping women to survive clinical depression. Nurses in the community are in a unique position to affect this public health problem.

77 FR 58600 - Self-Regulatory Organizations; BOX Options Exchange LLC; Notice of Filing and Immediate...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-09-21

... approving expansion of STO Program)[sic]. \\9\\ These include, without limitation, options, equities, futures... hedging strategies across various investment platforms (e.g. equity and ETF, index, derivatives, futures... Web site, strike prices for options on futures may be at an interval of $.05, $.10, and $.25 per...

77 FR 47898 - Self-Regulatory Organizations; the Depository Trust Company; Notice of Filing of Amendment No. 1...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-10

... of Global Custodians, to Elizabeth M. Murray (sic), Secretary, Commission (May 29, 2012); letter from... misapplied, misdirected, or miscalculated principal and income payments (``P&I'').\\4\\ Under today's practices... principal and associated interest. DTC has been requested a number of times by the Association of Global...

78 FR 62923 - Self-Regulatory Organizations; NYSE Arca, Inc.; Notice of Filing and Immediate Effectiveness of...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-10-22

... Change Adding a New Rule To Adopt Price Protection Filters for Electronic Complex Orders October 11, 2013... a new rule to adopt price protection filters for Electronic Complex Orders. The text of the proposed... Commentary .04 [sic] governing price protections filters applicable to electronically entered Complex Orders...

78 FR 62726 - Self-Regulatory Organizations; The NASDAQ Stock Market LLC; Notice of Filing and Immediate...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-10-22

... due, NASDAQ's experience is that the company's plan often requires detailed analysis by staff to...)(A)(iii) [sic]. NASDAQ's experience is that these types of deficiencies often arise unexpectedly from events outside the control of the company, such as the death or resignation of a director. Further...

High-Temperature, Lightweight, Self-Healing Ceramic Composites for Aircraft Engine Applications

NASA Technical Reports Server (NTRS)

Raj, Sai V.; Bhatt, Ramkrishna

2013-01-01

The use of reliable, high-temperature, lightweight materials in the manufacture of aircraft engines is expected to result in lower fossil and biofuel consumption, thereby leading to cost savings and lower carbon emissions due to air travel. Although nickel-based superalloy blades and vanes have been successfully used in aircraft engines for several decades, there has been an increased effort to develop high-temperature, lightweight, creep-resistant substitute materials under various NASA programs over the last two decades. As a result, there has been a great deal of interest in developing SiC/SiC ceramic matrix composites (CMCs) due to their higher damage tolerance compared to monolithic ceramics. Current-generation SiC/SiC ceramic matrix composites rely almost entirely on the SiC fibers to carry the load, owing to the premature cracking of the matrix during loading. Thus, the high-temperature usefulness of these CMCs falls well below their theoretical capabilities. The objective of this work is to develop a new class of high-temperature, lightweight, self-healing, SiC fiber-reinforced, engineered matrix ceramic composites.

The Abundance of SiC2 in Carbon Star Envelopes⋆: Evidence that SiC2 is a gas-phase precursor of SiC dust

PubMed Central

Massalkhi, Sarah; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2017-01-01

Context Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich AGB stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si–C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aims We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods We carried out sensitive observations with the IRAM 30m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source, at the exception of IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked, the SiC radical probably being the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend in which the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as an evidence of efficient incorporation of SiC2 onto dust grains, a process which is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. PMID:29628518

Effect of SiC particle size on the microstructure and properties of cold-sprayed Al/SiCp composite coating

NASA Astrophysics Data System (ADS)

Yu, Min; Hua, Junwei

2017-07-01

The Al5056/SiC composite coatings were prepared by cold spraying. Experimental results show that the SiC content in the composite coating deposited with the SiC powder having an average size of 67 μm (Al5056/SiC-67) is similar to that deposited with the SiC powder having an average size of 27 μm (Al5056/SiC-27). The microhardness and cohesion strength of Al5056/SiC-67 coating are higher than those of the Al5056/SiC-27 coating. In addition, the Al5056/SiC-67 coating having a superior wear resistance because of the coarse SiC powder with a superior kinetic energy contributes to the deformation resistance of the matrix Al5056 particles.

Polyfibroblast: A Self-Healing and Galvanic Protection Additive

DTIC Science & Technology

2013-09-25

Specifically we looked at emulsifier (Gum Arabic vs. SiC^), polymer-forming monomer (IPDI vs. BCI ), silane molecular weight (C12 vs. C18 vs. C8-C18...le+6J tu ie+4- le+2 U le+0 ■ Coating ■ Scratch BCI IPDI Isocyanate Type ICoating |Scratch Figure 3: A) Corrosion resistance of the...surprising. The type of monomer also did not appear to matter in these measurements. Whether polymerized from IPDI or BCI , the extent of self-healing

A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints

NASA Astrophysics Data System (ADS)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2018-02-01

The microcracking mechanisms responsible for Ti3SiC2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments are investigated in detail. A dual-phase microstructural approach to damage and fracture of Ti3SiC2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti3SiC2 and SiC phases. The behaviors of SiC and Ti3SiC2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504-515. This CDM model describes microcracking damage in brittle ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti3SiC2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti3SiC2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti3SiC2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. These predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.

Short-range second order screened exchange correction to RPA correlation energies

NASA Astrophysics Data System (ADS)

Beuerle, Matthias; Ochsenfeld, Christian

2017-11-01

Direct random phase approximation (RPA) correlation energies have become increasingly popular as a post-Kohn-Sham correction, due to significant improvements over DFT calculations for properties such as long-range dispersion effects, which are problematic in conventional density functional theory. On the other hand, RPA still has various weaknesses, such as unsatisfactory results for non-isogyric processes. This can in parts be attributed to the self-correlation present in RPA correlation energies, leading to significant self-interaction errors. Therefore a variety of schemes have been devised to include exchange in the calculation of RPA correlation energies in order to correct this shortcoming. One of the most popular RPA plus exchange schemes is the second order screened exchange (SOSEX) correction. RPA + SOSEX delivers more accurate absolute correlation energies and also improves upon RPA for non-isogyric processes. On the other hand, RPA + SOSEX barrier heights are worse than those obtained from plain RPA calculations. To combine the benefits of RPA correlation energies and the SOSEX correction, we introduce a short-range RPA + SOSEX correction. Proof of concept calculations and benchmarks showing the advantages of our method are presented.

Short-range second order screened exchange correction to RPA correlation energies.

PubMed

Beuerle, Matthias; Ochsenfeld, Christian

2017-11-28

Direct random phase approximation (RPA) correlation energies have become increasingly popular as a post-Kohn-Sham correction, due to significant improvements over DFT calculations for properties such as long-range dispersion effects, which are problematic in conventional density functional theory. On the other hand, RPA still has various weaknesses, such as unsatisfactory results for non-isogyric processes. This can in parts be attributed to the self-correlation present in RPA correlation energies, leading to significant self-interaction errors. Therefore a variety of schemes have been devised to include exchange in the calculation of RPA correlation energies in order to correct this shortcoming. One of the most popular RPA plus exchange schemes is the second order screened exchange (SOSEX) correction. RPA + SOSEX delivers more accurate absolute correlation energies and also improves upon RPA for non-isogyric processes. On the other hand, RPA + SOSEX barrier heights are worse than those obtained from plain RPA calculations. To combine the benefits of RPA correlation energies and the SOSEX correction, we introduce a short-range RPA + SOSEX correction. Proof of concept calculations and benchmarks showing the advantages of our method are presented.

Sintering Behavior of Nanocrystalline Silicon Carbide Using a Plasma Pressure Compaction System: Master Sintering Curve Analysis

NASA Astrophysics Data System (ADS)

Bothara, Manish G.; Atre, Sundar V.; Park, Seong-Jin; German, Randall M.; Sudarshan, T. S.; Radhakrishnan, R.

2010-12-01

Nanostructured ceramics offer significant improvements in properties over corresponding materials with larger grain sizes on the order of tens to hundreds of micrometers. Silicon carbide (SiC) samples with grain sizes on the order of 100 nm can result in improved strength, chemical resistance, thermal stability, and tailored electrical resistivity. In this study, nanocrystalline SiC was processed in a plasma pressure compaction (P2C) system at a temperature of 1973 K (1700 °C) that was much lower than the temperatures reported for other sintering techniques. Microstructure of the resulting samples was studied and the hardness and the fracture toughness were measured. The grain sizes were on the order of 700 nm, the hardness between 22 and 24 GPa, and the toughness between 5 and 6.5 MPa·m1/2. The master sintering curve (MSC) analysis was used to model the densification behavior of SiC powder sintered by the P2C method. The apparent activation energies for three different pressures of 10, 30, and 50 MPa were obtained to be 1666, 1034, and 1162 kJ/mol, respectively. Although densification occurs via diffusion, the activation energies were higher than those associated with self-diffusion in SiC (between 570 and 920 kJ/mol). A validation study of the MSC was also conducted and the variation in observed density from the density predicted by the MSC was found to range from 1 to 10 pct.

Abundance of SiC2 in carbon star envelopes

NASA Astrophysics Data System (ADS)

Massalkhi, S.; Agúndez, M.; Cernicharo, J.; Velilla Prieto, L.; Goicoechea, J. R.; Quintana-Lacaci, G.; Fonfría, J. P.; Alcolea, J.; Bujarrabal, V.

2018-03-01

Context. Silicon carbide dust is ubiquitous in circumstellar envelopes around C-rich asymptotic giant branch (AGB) stars. However, the main gas-phase precursors leading to the formation of SiC dust have not yet been identified. The most obvious candidates among the molecules containing an Si-C bond detected in C-rich AGB stars are SiC2, SiC, and Si2C. To date, the ring molecule SiC2 has been observed in a handful of evolved stars, while SiC and Si2C have only been detected in the C-star envelope IRC +10216. Aim. We aim to study how widespread and abundant SiC2, SiC, and Si2C are in envelopes around C-rich AGB stars, and whether or not these species play an active role as gas-phase precursors of silicon carbide dust in the ejecta of carbon stars. Methods: We carried out sensitive observations with the IRAM 30 m telescope of a sample of 25 C-rich AGB stars to search for emission lines of SiC2, SiC, and Si2C in the λ 2 mm band. We performed non-LTE excitation and radiative transfer calculations based on the LVG method to model the observed lines of SiC2 and to derive SiC2 fractional abundances in the observed envelopes. Results: We detect SiC2 in most of the sources, SiC in about half of them, and do not detect Si2C in any source except IRC +10216. Most of these detections are reported for the first time in this work. We find a positive correlation between the SiC and SiC2 line emission, which suggests that both species are chemically linked; the SiC radical is probably the photodissociation product of SiC2 in the external layer of the envelope. We find a clear trend where the denser the envelope, the less abundant SiC2 is. The observed trend is interpreted as evidence of efficient incorporation of SiC2 onto dust grains, a process that is favored at high densities owing to the higher rate at which collisions between particles take place. Conclusions: The observed behavior of a decline in the SiC2 abundance with increasing density strongly suggests that SiC2 is an important gas-phase precursor of SiC dust in envelopes around carbon stars. Based on observations carried out with the IRAM 30 m Telescope. IRAM is supported by INSU/CNRS (France), MPG (Germany), and IGN (Spain).

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints

DOE PAGES

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

2017-12-05

We investigate the microcracking mechanisms responsible for Ti 3SiC 2/SiC joint damage observed at the macroscopic scale after neutron irradiation experiments in detail. A dual-phase microstructural approach to damage and fracture of Ti 3SiC 2/SiC joints is developed that uses a finely discretized two-phase domain based on a digital image of an actual microstructure involving embedded Ti 3SiC 2 and SiC phases. The behaviors of SiC and Ti 3SiC 2 in the domain are described by the continuum damage mechanics (CDM) model reported in Nguyen et al., J. Nucl. Mater., 2017, 495:504–515. This CDM model describes microcracking damage in brittlemore » ceramics caused by thermomechanical loading and irradiation-induced swelling. The dual-phase microstructural model is applied to predict the microcracking mechanisms occurring in a typical Ti 3SiC 2/SiC joint subjected to heating to 800 °C followed by irradiation-induced swelling at this temperature and cooling to room temperature after the applied swelling has reached the maximum swelling levels observed in the experiments for SiC and Ti 3SiC 2. The model predicts minor damage of the joint after heating but significant microcracking in the SiC phase and along the boundaries between SiC and Ti 3SiC 2 as well as along the bonding joint during irradiation-induced swelling and cooling to room temperature. Our predictions qualitatively agree with the limited experimental observations of joint damage at this irradiation temperature.« less

Erosion and strength degradation of biomorphic SiC.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Fernandez, J.; de Arellano-Lopez, A. R; Varela-Feria, F. M.

2004-05-01

Solid-particle-erosion studies were conducted on biomorphic SiC based on eucalyptus and pine, reaction-bonded (RB) SiC, and hot-pressed (HP) SiC. The erodents were angular SiC abrasives of average diameter 63, 143, or 390 {mu}m and the impact velocity was 100 m s{sup -1}. Impact occurred at normal incidence. Material loss in all targets occurred by brittle fracture. The biomorphic specimens eroded by formation of both lateral and radial cracks and their erosion rates were higher than both conventional SiCs. The RB SiC eroded as a classic brittle material, by formation and propagation of lateral cracks. The HP SiC, the hardest target,more » was the most erosion resistant. In erosion of the HP SiC, the abrasive particles, especially the largest ones, fragmented upon impact. The resulting dissipation of energy led to relatively low erosion rates. Flexural strength before and after erosion was measured for the biomorphic eucalyptus, RB SiC, and HP SiC. Erosion damage reduced the flexural strengths of all of the specimens. The relative strength reductions were lowest for the biomorphic eucalyptus and highest for the HP SiC. The hot-pressed SiC responded as predicted by accepted models of impact damage in brittle solids. The responses of the biomorphic and reaction-bonded SiC specimens were modeled as if they consisted of only SiC and porosity. This approximation agreed reasonably well with observed degradations of strength.« less

Many-body effects and ultraviolet renormalization in three-dimensional Dirac materials

NASA Astrophysics Data System (ADS)

Throckmorton, Robert; Hofmann, Johannes; Barnes, Edwin

We develop a theory for electron-electron interaction-induced many-body effects in three dimensional (3D) Weyl or Dirac semimetals, including interaction corrections to the polarizability, electron self-energy, and vertex function, up to second order in the effective fine structure constant of the Dirac material. These results are used to derive the higher-order ultraviolet renormalization of the Fermi velocity, effective coupling, and quasiparticle residue, revealing that the corrections to the renormalization group (RG) flows of both the velocity and coupling counteract the leading-order tendencies of velocity enhancement and coupling suppression at low energies. This in turn leads to the emergence of a critical coupling above which the interaction strength grows with decreasing energy scale. In addition, we identify a range of coupling strengths below the critical point in which the Fermi velocity varies non-monotonically as the low-energy, non-interacting fixed point is approached. Furthermore, we find that while the higher-order correction to the flow of the coupling is generally small compared to the leading order, the corresponding correction to the velocity flow carries an additional factor of the Dirac cone flavor number relative to the leading-order result. Supported by LPS-MPO-CMTC.

Implementation and evaluation of fuel creep using advanced light-water reactor materials in FRAPCON 3.5

NASA Astrophysics Data System (ADS)

Carroll, Spencer

As current reactors approach the end of their operable lifetime, new reactors are needed if nuclear power is to continue being generated in the United States. Some utilities have already began construction on newer, more advanced LWR reactors, which use the same fuel as current reactors and have a similar but updated design. Others are researching next generation (GEN-IV) reactors which have new designs that utilize alternative fuel, coolants and other reactor materials. Many of these alternative fuels are capable of achieving higher burnups and are designed to be more accident tolerant than the currently used UO2 fuel. However, before these new materials can be used, extensive research must be done in order to obtain a detailed understanding of how the new fuels and other materials will interact. New fuels, such as uranium nitride (UN) and uranium carbide (UC) have several advantages over UO2, such as increased burnup capabilities and higher thermal conductivities. However, there are issues with each that prevent UC and UN from being used as direct replacements for UO2. Both UC and UN swell at a significantly higher rate than UO2 and neither fuel reacts favorably when exposed to water. Due to this, UC and UN are being considered more for GEN-IV reactors that use alternative coolant rather than for current LWRs. In an effort to increase accident tolerance, silicon carbide (SiC) is being considered for use as an alternative cladding. The high strength, high melting point and low oxidation of SiC make it an attractive cladding choice, especially in an accident scenario. However, as a ceramic, SiC is not ductile and will not creep outwards upon pellet-clad mechanical interaction (PCMI) which can cause a large build up in interfacial pressure. In order to understand the interaction between the high swelling fuels and unyielding SiC cladding, data on the properties and behaviors of these materials must be gathered and incorporated into FRAPCON. FRAPCON is a fuel performance code developed by PNNL and used by the Nuclear Regulatory Commission (NRC) as a licensing code for US reactors. FRAPCON will give insight into how these new fuel-cladding combinations will affect cladding hoop stress and help determine if the new materials are feasible for use in a reactor. To accurately simulate the interaction between the new materials, a soft pellet model that allows for stresses on the pellet to affect pellet deformation will have to be implemented. Currently, FRAPCON uses a rigid pellet model that does not allow for feedback of the cladding onto the pellet. Since SiC does not creep at the temperatures being considered and is not ductile, any PCMI create a much higher interfacial pressure than is possible with Zircaloy. Because of this, it is necessary to implement a model that allows for pellet creep to alleviate some of these cladding stresses. These results will then be compared to FEMAXI-6, a Japanese fuel performance code that already calculates pellet stress and allows for cladding feedback onto the pellet. This research is intended to be a continuation and verification of previous work done by USC on the analysis of accident tolerant fuels with alternative claddings and is intended to prove that a soft pellet model is necessary to accurately model any fuel with SiC cladding.

Rectified photocurrent in a planar ITO/graphene/ITO photodetector on SiC by local irradiation of ultraviolet light

NASA Astrophysics Data System (ADS)

Yang, Junwei; Guo, Liwei; Huang, Jiao; Mao, Qi; Guo, Yunlong; Jia, Yuping; Peng, Tonghua; Chen, Xiaolong

2017-10-01

A rectified photocurrent behaviour is demonstrated in a simple planar structure of ITO-graphene-ITO formed on a SiC substrate when an ultraviolet (UV) light is locally incident on one of the edges between the graphene and ITO electrode. The photocurrent has similar characteristics as those of a vertical structure graphene/semiconductor junction photodiode, but is clearly different from those found in a planar structure metal-graphene-metal device. Furthermore, the device behaves multi-functionally as a photodiode with sensitive UV photodetection capability (responsivity of 11.7 mA W-1 at 0.3 V) and a self-powered UV photodetector (responsivity of 4.4 mA W-1 at zero bias). Both features are operative in a wide dynamic range and with a fast speed of response in about gigahertz. The linear I-V behaviour with laser power at forward bias and cutoff at reverse bias leads to a conceptual photodiode, which is compatible with modern semiconductor planar device architecture. This paves a potential way to realize ultrafast graphene planar photodiodes for monolithic integration of graphene-based devices on the same SiC substrate.

Study of self-ion irradiated nanostructured ferritic alloy (NFA) and silicon carbide-nanostructured ferritic alloy (SiC-NFA) cladding materials

NASA Astrophysics Data System (ADS)

Ning, Kaijie; Bai, Xianming; Lu, Kathy

2018-07-01

Silicon carbide-nanostructured ferritic alloy (SiC-NFA) materials are expected to have the beneficial properties of each component for advanced nuclear claddings. Fabrication of pure NFA (0 vol% SiC-100 vol% NFA) and SiC-NFAs (2.5 vol% SiC-97.5 vol% NFA, 5 vol% SiC-95 vol% NFA) has been reported in our previous work. This paper is focused on the study of radiation damage in these materials under 5 MeV Fe++ ion irradiation with a dose up to ∼264 dpa. It is found that the material surfaces are damaged to high roughness with irregularly shaped ripples, which can be explained by the Bradley-Harper (B-H) model. The NFA matrix shows ion irradiation induced defect clusters and small dislocation loops, while the crystalline structure is maintained. Reaction products of Fe3Si and Cr23C6 are identified in the SiC-NFA materials, with the former having a partially crystalline structure but the latter having a fully amorphous structure upon irradiation. The different radiation damage behaviors of NFA, Fe3Si, and Cr23C6 are explained using the defect reaction rate theory.

Comparison of fission product release predictions using PARFUME with results from the AGR-1 safety tests

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collin, Blaise P.; Petti, David A.; Demkowicz, Paul A.

Safety tests were conducted on fuel compacts from AGR-1, the first irradiation experiment of the Advanced Gas Reactor (AGR) Fuel Development and Qualification program, at temperatures ranging from 1600 to 1800 °C to determine fission product release at temperatures that bound reactor accident conditions. The PARFUME (PARticle FUel ModEl) code was used to predict the release of fission products silver, cesium, strontium, and krypton from fuel compacts containing tristructural isotropic (TRISO) coated particles during 15 of these safety tests. Comparisons between PARFUME predictions and post-irradiation examination results of the safety tests were conducted on two types of AGR-1 compacts: compactsmore » containing only intact particles and compacts containing one or more particles whose SiC layers failed during safety testing. In both cases, PARFUME globally over-predicted the experimental release fractions by several orders of magnitude: more than three (intact) and two (failed SiC) orders of magnitude for silver, more than three and up to two orders of magnitude for strontium, and up to two and more than one orders of magnitude for krypton. The release of cesium from intact particles was also largely over-predicted (by up to five orders of magnitude) but its release from particles with failed SiC was only over-predicted by a factor of about 3. These over-predictions can be largely attributed to an over-estimation of the diffusivities used in the modeling of fission product transport in TRISO-coated particles. The integral release nature of the data makes it difficult to estimate the individual over-estimations in the kernel or each coating layer. Nevertheless, a tentative assessment of correction factors to these diffusivities was performed to enable a better match between the modeling predictions and the safety testing results. The method could only be successfully applied to silver and cesium. In the case of strontium, correction factors could not be assessed because potential release during the safety tests could not be distinguished from matrix content released during irradiation. Furthermore, in the case of krypton, all the coating layers are partly retentive and the available data did not allow the level of retention in individual layers to be determined, hence preventing derivation of any correction factors.« less

Comparison of fission product release predictions using PARFUME with results from the AGR-1 safety tests

DOE PAGES

Collin, Blaise P.; Petti, David A.; Demkowicz, Paul A.; ...

2016-04-07

Safety tests were conducted on fuel compacts from AGR-1, the first irradiation experiment of the Advanced Gas Reactor (AGR) Fuel Development and Qualification program, at temperatures ranging from 1600 to 1800 °C to determine fission product release at temperatures that bound reactor accident conditions. The PARFUME (PARticle FUel ModEl) code was used to predict the release of fission products silver, cesium, strontium, and krypton from fuel compacts containing tristructural isotropic (TRISO) coated particles during 15 of these safety tests. Comparisons between PARFUME predictions and post-irradiation examination results of the safety tests were conducted on two types of AGR-1 compacts: compactsmore » containing only intact particles and compacts containing one or more particles whose SiC layers failed during safety testing. In both cases, PARFUME globally over-predicted the experimental release fractions by several orders of magnitude: more than three (intact) and two (failed SiC) orders of magnitude for silver, more than three and up to two orders of magnitude for strontium, and up to two and more than one orders of magnitude for krypton. The release of cesium from intact particles was also largely over-predicted (by up to five orders of magnitude) but its release from particles with failed SiC was only over-predicted by a factor of about 3. These over-predictions can be largely attributed to an over-estimation of the diffusivities used in the modeling of fission product transport in TRISO-coated particles. The integral release nature of the data makes it difficult to estimate the individual over-estimations in the kernel or each coating layer. Nevertheless, a tentative assessment of correction factors to these diffusivities was performed to enable a better match between the modeling predictions and the safety testing results. The method could only be successfully applied to silver and cesium. In the case of strontium, correction factors could not be assessed because potential release during the safety tests could not be distinguished from matrix content released during irradiation. Furthermore, in the case of krypton, all the coating layers are partly retentive and the available data did not allow the level of retention in individual layers to be determined, hence preventing derivation of any correction factors.« less

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An in vitro study into the efficacy of complex tooth alignment with conventional and self-ligating brackets.

PubMed

Montasser, M A; Keilig, L; Bourauel, C

2015-02-01

To evaluate the efficacy of tooth alignment achieved by various small cross-section archwire/bracket combinations using the orthodontic measurement and simulation system. The study comprised three types of orthodontic brackets 1) conventional ligating (Victory Series and Mini-Taurus), 2) self-ligating (SmartClip a passive self-ligating bracket and Time3 an active self-ligating bracket), and 3) a conventional low-friction bracket (Synergy). All brackets had a nominal 0.022″ slot size. Brackets were combined with 1) 0.012″ stainless steel, 2) 0.012″ Orthonol, 3) 0.012″ Thermalloy, and 4) 0.0155″ coaxial archwires. Archwires were tied to the conventional brackets with stainless steel ligatures and elastomeric rings. The malocclusion simulated represented a central upper incisor displaced 2 mm gingivally (x-axis) and 2 mm labially (z-axis). The inciso-gingival correction achieved by the different archwire/bracket combinations ranged from 15 to 95%, while the labio-lingual correction ranged from 10 to 95%. The smallest correction was achieved by coaxial, Orthonol, and thermally archwires when ligated with the elastomeric rings to conventional brackets. Stainless steel archwires achieved from 65 to 90% of inciso-gingival correction and from 60 to 90% of labio-lingual correction. The resultant tooth alignment was the product of interaction between the archwire type, bracket type, and bracket design including ligature type. Small cross-sectional archwires might produce up to 95% correction if combined properly with the bracket system. Elastomeric rings when used with conventional brackets limit the efficacy of malalignment correction. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Use of a prevention index to identify industries at high risk for work-related musculoskeletal disorders of the neck, back, and upper extremity in Washington state, 1990-1998.

PubMed

Silverstein, Barbara; Viikari-Juntura, Eira; Kalat, John

2002-03-01

The prevention of work-related musculoskeletal disorders such as carpal tunnel syndrome and low back disorders has been a focus of international prevention efforts including regulation. This study examines workers compensation claims in Washington State to provide baseline data from which to assess the need and the effects of prevention activities. Washington State Fund workers compensation claims for general and selected specific hand/wrist, elbow, shoulder, and back disorders in 1990-1998 as well as general self-insured compensable (four or more lost workdays) claims data were examined. Payroll hours were used to calculate claims incidence rates per 10,000 full-time equivalent employees (FTEs). We created a prevention index (PI) to rank industries by averaging the ranks of their number of claims and their claims incidence rate. The focus was on non-traumatic soft tissue musculoskeletal disorders (NTST-MSDs). Between 1990-1998, there were 392,925 State Fund accepted claims for NTST-MSDs of the neck, back, and upper extremity resulting in $2.6 billion in direct costs and 20.5 million lost workdays. The average claims incidence rate (CIR) was 355 NTST-MSDs per 10,000 FTEs. The NTST-MSD CIR decreased significantly less than that for all other claims (P = 0.05) but the CIR for upper extremity NTST-MSDs did not significantly decrease over the study period. There were no significant changes in the CIRs for sciatica (4.9 per 10,000 FTEs) and rotator cuff syndrome (15.3 per 10,000 FTEs), whereas the CIR for epicondylitis (10.6 per 10,000 FTEs) increased and for carpal tunnel syndrome (24.5 per 10,000 FTEs) decreased significantly over the study period. Based on the prevention index, the top five industries for combined State Fund and Self-Insured Compensable NTST-MSDs were Trucking and Courier Services (SIC 421), Nursing Homes (SIC 805), Masonry (SIC 174), Air Transportation (SIC 451), and Residential Construction (SIC 152). Using Washington Industrial Classes (WIC), temporary workers in assembly and administrative services were also high on the prevention index. NTST-MSDs continue to be a large and costly problem in Washington State. While the incidence rates for some NTST-MSDs are decreasing, the overall rate is not decreasing as fast as the rate for all other claims. In some cases, the rate is stable (sciatica, rotator cuff syndrome) or increasing (epicondylitis). Heavy manual handling and repetitive work characterize the industries with the highest risk. Copyright 2002 Wiley-Liss, Inc.

Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation

NASA Technical Reports Server (NTRS)

Joshi, R. P.

2001-01-01

The objective of this work was to conduct a modeling study of SiC P-N junction diodes operating under high reverse biased conditions. Analytical models and numerical simulation capabilities were to be developed for self-consistent electro-thermal analysis of the diode current-voltage (I-V) characteristics. Data from GRC indicate that screw dislocations are unavoidable in large area SiC devices, and lead to changes in the SiC diode electrical response characteristics under high field conditions. For example, device instability and failures linked to internal current filamentation have been observed. The physical origin of these processes is not well understood, and quantitative projections of the electrical behavior under high field and temperature conditions are lacking. Thermal calculations for SiC devices have not been reported in the literature either. So estimates or projections of peak device temperatures and power limitations do not exist. This numerical study and simulation analysis was aimed at resolving some of the above issues. The following tasks were successfully accomplished: (1) Development of physically based models using one- and two-dimensional drift-diffusion theory for the transport behavior and I-V characteristics; (2) One- and two-dimensional heat flow to account for internal device heating. This led to calculations of the internal temperature profiles, which in turn, were used to update the electrical transport parameters for a self-consistent analysis. The temperature profiles and the peak values were thus obtainable for a given device operating condition; (3) Inclusion of traps assumed to model the presence of internal screw dislocations running along the longitudinal direction; (4) Predictions of the operating characteristics with and without heating as a function of applied bias with and without traps. Both one and two-dimensional cases were implemented; (5) Assessment of device stability based on the operating characteristics. The presence of internal non-uniformities, particularly filamentary structures, was probed and demonstrated; (6) Cause and physical origins of filamentary behavior and unstable I-V characteristics were made transparent; (7) It was demonstrated that diodes containing defects would be more prone to thermal breakdown associated with the temperature dependent decrease in the thermal conductivity; and (8) Finally, negative differential resistance (S-shaped NDR) which can potential lead to device instability and filamentary behavior was shown to occur for diodes containing a line of defects such as could be associated with a screw dislocation line.

Are there Bucky Balls in Circumstellar Space?

NASA Astrophysics Data System (ADS)

Little-Marenin, I. R.; Clayton, G. C.

1993-01-01

Recently the gas-phase (and solid phase) infrared emission spectrum of C60 -buckminsterfullerene has been obtained. Bands attributable to C60 have been identified at 8.6 microns (1169 cm(-1) ), 17.5 microns (570 cm(-1) ), 19.0 microns (527 cm(-1) ) and 7.1 microns (1410 cm(-1) ) (Frum et al. 1991, Chem. Phy. Lett., 176, 504). The low resolution spectrometer (LRS) on IRAS obtained spectra in the 8-22 microns region of brighter sources including about 500 carbon stars. Besides the 11.2 microns SiC dust grain feature, a significant number of the carbon stars show an emission feature between 8- 9 microns typically peaking around 8.6 microns even after correcting for a calibration problem associated with the short wavelength end of the spectra (Volk and Cohen 1989, A.J., 98, 1918). The strength of this emission feature relative to the SiC feature varies significantly from being absent to being much stronger than the SiC feature. Attempts to attribute this feature to PAHs have been unsucessful. We suggest that the 8.6 microns feature may be due to buckminsterfullerene-C60. Attempts to identify the diffuse interstellar bands with C60 have been unsuccessful. We are conducting a search for the 17.5 and 19 microns features associated with buckminsterfullerenes. The strength of the 8.6 microns feature will be correlated with other known abundance parameters.

Quasiparticle energy bands and Fermi surfaces of monolayer NbSe2

NASA Astrophysics Data System (ADS)

Kim, Sejoong; Son, Young-Woo

2017-10-01

A quasiparticle band structure of a single layer 2 H -NbSe2 is reported by using first-principles G W calculation. We show that a self-energy correction increases the width of a partially occupied band and alters its Fermi surface shape when comparing those using conventional mean-field calculation methods. Owing to a broken inversion symmetry in the trigonal prismatic single layer structure, the spin-orbit interaction is included and its impact on the Fermi surface and quasiparticle energy bands are discussed. We also calculate the doping dependent static susceptibilities from the band structures obtained by the mean-field calculation as well as G W calculation with and without spin-orbit interactions. A complete tight-binding model is constructed within the three-band third nearest neighbor hoppings and is shown to reproduce our G W quasiparticle energy bands and Fermi surface very well. Considering variations of the Fermi surface shapes depending on self-energy corrections and spin-orbit interactions, we discuss the formations of charge density wave (CDW) with different dielectric environments and their implications on recent controversial experimental results on CDW transition temperatures.

Investigation on mechanical behavior and material characteristics of various weight composition of SiCp reinforced aluminium metal matrix composite

NASA Astrophysics Data System (ADS)

Pichumani, Sivachidambaram; Srinivasan, Raghuraman; Ramamoorthi, Venkatraman

2018-02-01

Aluminium - silicon carbide (Al - SiC) metal matrix composite is produced with following wt % of SiC reinforcement (4%, 8% & 12%) using stir casting method. Mechanical testing such as micro hardness, tensile testing and bend testing were performed. Characterizations, namely micro structure, X-ray diffraction (XRD) analysis, inductive coupled plasma - optical emission spectroscopy (ICP-OES) and scanning electron microscopy (SEM) analysis, were carried out on Al - SiC composites. The presence of SiC on Al - SiC composite is confirmed through XRD technique and microstructure. The percentage of SiC was confirmed through ICP-OES technique. Increase in weight percentage of SiC tends to increase micro hardness, ultimate strength & yield strength but it reduces the bend strength and elongation (%) of the material. SEM factrography of tensile tested fractured samples of Al - 8% SiC & Al - 12% SiC showed fine dimples on fractured surface & coarse dimples fractured surface respectively. This showed significant fracture differences between Al - 8% SiC & Al - 12% SiC. From the above experiment, Al - 8% SiC had good micro hardness, ultimate strength & yield strength without significant loss in elongation (%) & bend strength.

Original Size and Shape of the Sudbury Structure

NASA Technical Reports Server (NTRS)

Lowman, P. D., Jr.

1997-01-01

This paper presents new evidence bearing on the original size and shape of the Sudbury impact structure. Current opinion is almost unanimous that the structure is a multiring basin with an original diameter of about 200 km and a circular shape that has since been shortened in a northwest-southeast direction by Penokean deformation Evidence for this interpretation, collected chiefly from north of the Sudbury Igneous Complex (SIC), includes supposed outer rings on Landsat imagery, distant occurrences of "Sudbury breccia" (generally defined as pseudotachylite), shatter cone occurrences, and outliers of Huronian sedimentary rock thought to be down-faulted rings. New data from imaging radar and field work north of the SIC, however, contradict this evidence. Radar imagery shows no signs of the supposed outer rings mapped by earlier workers on Landsat images. The most prominent ring has been found to be a chance alignment of two independent fracture sets. Radar imagery from the CCRS Convair 580, with look direction almost normal to the north rim of the SIC, shows no evidence of the rings despite strong look azimuth highlighting. Radar imagery has shown many unmapped diabase dikes north of the SIC. Several exposures of supposed Sudbury breccia are associated with these dikes or with Nipissing diabase intrusions, in some cases actually inside the dikes or directly continuous with them. They appear to be igneous intrusion breccias with no relation to impact. Shock-wave interaction at lithologic contacts cannot be invoked for most of these, because they are part of a northwest trending swarm cutting the SIC in the North Range, and hence too young for an impact origin. Similar diabase-related breccias and pseudotachylite-like veins have been found far outside the Sudbury area between Chapleau and Thessalon. Shatter cones north of the SIC are few and poorly developed, perhaps due to the coarse-grained Footwall rock, and cannot be considered a continuous zone analogous to their occurrence on the South Range in Huronian rocks. Supposed down-faulted outliers of Huronian rocks north of the SIC show no consistent relation to faulting, and the Huronian/Archean contact is locally erosional. Radar imagery and field-checking confirm Rousell's conclusion that the North Range has undergone little or no Penokean deformation. T'his implies that the plan view outline of the crater (floor of the SIC) is original. Extrapolation of the North Range as part of a circular arc leads to an impossibly great diameter. It is concluded that although Penokean deformation largely accounts for the structure's shape, the original crater was not circular and was much smaller than 200 km across.

Dimension towers of SICs. I. Aligned SICs and embedded tight frames

NASA Astrophysics Data System (ADS)

Appleby, Marcus; Bengtsson, Ingemar; Dumitru, Irina; Flammia, Steven

2017-11-01

Algebraic number theory relates SIC-POVMs in dimension d > 3 to those in dimension d(d - 2). We define a SIC in dimension d(d - 2) to be aligned to a SIC in dimension d if and only if the squares of the overlap phases in dimension d appear as a subset of the overlap phases in dimension d(d - 2) in a specified way. We give 19 (mostly numerical) examples of aligned SICs. We conjecture that given any SIC in dimension d, there exists an aligned SIC in dimension d(d - 2). In all our examples, the aligned SIC has lower dimensional equiangular tight frames embedded in it. If d is odd so that a natural tensor product structure exists, we prove that the individual vectors in the aligned SIC have a very special entanglement structure, and the existence of the embedded tight frames follows as a theorem. If d - 2 is an odd prime number, we prove that a complete set of mutually unbiased bases can be obtained by reducing an aligned SIC to this dimension.

SiC MOSFET Based Single Phase Active Boost Rectifier with Power Factor Correction for Wireless Power Transfer Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C; Tang, Lixin; Chinthavali, Madhu Sudhan

2014-01-01

Wireless Power Transfer (WPT) technology is a novel research area in the charging technology that bridges the utility and the automotive industries. There are various solutions that are currently being evaluated by several research teams to find the most efficient way to manage the power flow from the grid to the vehicle energy storage system. There are different control parameters that can be utilized to compensate for the change in the impedance due to variable parameters such as battery state-of-charge, coupling factor, and coil misalignment. This paper presents the implementation of an active front-end rectifier on the grid side formore » power factor control and voltage boost capability for load power regulation. The proposed SiC MOSFET based single phase active front end rectifier with PFC resulted in >97% efficiency at 137mm air-gap and >95% efficiency at 160mm air-gap.« less

Insight into the molecular basis of pathogen abundance: group A Streptococcus inhibitor of complement inhibits bacterial adherence and internalization into human cells.

PubMed

Hoe, Nancy P; Ireland, Robin M; DeLeo, Frank R; Gowen, Brian B; Dorward, David W; Voyich, Jovanka M; Liu, Mengyao; Burns, Eugene H; Culnan, Derek M; Bretscher, Anthony; Musser, James M

2002-05-28

Streptococcal inhibitor of complement (Sic) is a secreted protein made predominantly by serotype M1 Group A Streptococcus (GAS), which contributes to persistence in the mammalian upper respiratory tract and epidemics of human disease. Unexpectedly, an isogenic sic-negative mutant adhered to human epithelial cells significantly better than the wild-type parental strain. Purified Sic inhibited the adherence of a sic negative serotype M1 mutant and of non-Sic-producing GAS strains to human epithelial cells. Sic was rapidly internalized by human epithelial cells, inducing cell flattening and loss of microvilli. Ezrin and moesin, human proteins that functionally link the cytoskeleton to the plasma membrane, were identified as Sic-binding proteins by affinity chromatography and matrix-assisted laser desorption/ionization time-of-flight mass spectrometry analysis. Sic colocalized with ezrin inside epithelial cells and bound to the F-actin-binding site region located in the carboxyl terminus of ezrin and moesin. Synthetic peptides corresponding to two regions of Sic had GAS adherence-inhibitory activity equivalent to mature Sic and inhibited binding of Sic to ezrin. In addition, the sic mutant was phagocytosed and killed by human polymorphonuclear leukocytes significantly better than the wild-type strain, and Sic colocalized with ezrin in discrete regions of polymorphonuclear leukocytes. The data suggest that binding of Sic to ezrin alters cellular processes critical for efficient GAS contact, internalization, and killing. Sic enhances bacterial survival by enabling the pathogen to avoid the intracellular environment. This process contributes to the abundance of M1 GAS in human infections and their ability to cause epidemics.

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

NASA Astrophysics Data System (ADS)

Okuda, Takafumi; Kimoto, Tsunenobu; Suda, Jun

2018-04-01

We investigate the electrical characteristics of 1-kV pnp SiC bipolar junction transistors (BJTs) and compare them with those of npn SiC BJTs. The base resistance, current gain, and blocking capability are characterized. It is found that the base resistance of pnp SiC BJTs is two orders of magnitude lower than that of npn SiC BJTs. However, the obtained current gains are low below unity in pnp SiC BJTs, whereas npn SiC BJTs exhibit a current gain of 14 without surface passivation. The reason for the poor current gain of pnp SiC BJTs is discussed.

Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.

This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiationmore » temperatures: 800oC, 500oC, and 400oC.« less

Correlation of Hope and Self-Efficacy With Job Satisfaction, Job Stress, and Organizational Commitment for Correctional Officers in the Taiwan Prison System.

PubMed

Law, Fang Mei; Guo, Gwo Jen

2016-08-01

The aim of this study was to explore the correlation of hope and self-efficacy with job satisfaction, job stress, and organizational commitment for correctional officers in the Taiwan prison system while controlling for the shared effects of the nature of the institution (i.e., for male or female inmates) and personal characteristics of the officers (i.e., gender, age, and years of work experience). Hope in the context of this study refers to a cognitive set and motivational state that involves reciprocal interaction between goal-directed energy (agency) and planned pathways to meet the goals (pathway). It is a personality trait of hopefulness, rather than having hope for the prisoners restructuring their future. Self-efficacy refers to the belief that individuals have regarding their ability to perform necessary tasks to achieve goals. Although they share similar constructs, hope theory places emphasis on cross-situational goal-directed thought, whereas the concept of self-efficacy focuses on situation-specific goals. The participants were 133 correctional personnel from two correctional institutions, one with male inmates and the other with female inmates, in central Taiwan. The results of ordinary least squares regression analysis indicated that hope had a significant positive association with job satisfaction and a significant negative association with job stress. Self-efficacy had a significant positive association with job satisfaction and organizational commitment. Finally, job satisfaction had a significant positive association with organizational commitment. © The Author(s) 2015.

A comparison of two methods for quantifying soil organic carbon of alpine grasslands on the Tibetan Plateau.

PubMed

Chen, Litong; Flynn, Dan F B; Jing, Xin; Kühn, Peter; Scholten, Thomas; He, Jin-Sheng

2015-01-01

As CO2 concentrations continue to rise and drive global climate change, much effort has been put into estimating soil carbon (C) stocks and dynamics over time. However, the inconsistent methods employed by researchers hamper the comparability of such works, creating a pressing need to standardize the methods for soil organic C (SOC) quantification by the various methods. Here, we collected 712 soil samples from 36 sites of alpine grasslands on the Tibetan Plateau covering different soil depths and vegetation and soil types. We used an elemental analyzer for soil total C (STC) and an inorganic carbon analyzer for soil inorganic C (SIC), and then defined the difference between STC and SIC as SOCCNS. In addition, we employed the modified Walkley-Black (MWB) method, hereafter SOCMWB. Our results showed that there was a strong correlation between SOCCNS and SOCMWB across the data set, given the application of a correction factor of 1.103. Soil depth and soil type significantly influenced on the recovery, defined as the ratio of SOCMWB to SOCCNS, and the recovery was closely associated with soil carbonate content and pH value as well. The differences of recovery between alpine meadow and steppe were largely driven by soil pH. In addition, statistically, a relatively strong correlation between SOCCNS and STC was also found, suggesting that it is feasible to estimate SOCCNS stocks through the STC data across the Tibetan grasslands. Therefore, our results suggest that in order to accurately estimate the absolute SOC stocks and its change in the Tibetan alpine grasslands, adequate correction of the modified WB measurements is essential with correct consideration of the effects of soil types, vegetation, soil pH and soil depth.

A Comparison of Two Methods for Quantifying Soil Organic Carbon of Alpine Grasslands on the Tibetan Plateau

PubMed Central

Chen, Litong; Flynn, Dan F. B.; Jing, Xin; Kühn, Peter; Scholten, Thomas; He, Jin-Sheng

2015-01-01

As CO2 concentrations continue to rise and drive global climate change, much effort has been put into estimating soil carbon (C) stocks and dynamics over time. However, the inconsistent methods employed by researchers hamper the comparability of such works, creating a pressing need to standardize the methods for soil organic C (SOC) quantification by the various methods. Here, we collected 712 soil samples from 36 sites of alpine grasslands on the Tibetan Plateau covering different soil depths and vegetation and soil types. We used an elemental analyzer for soil total C (STC) and an inorganic carbon analyzer for soil inorganic C (SIC), and then defined the difference between STC and SIC as SOCCNS. In addition, we employed the modified Walkley-Black (MWB) method, hereafter SOCMWB. Our results showed that there was a strong correlation between SOCCNS and SOCMWB across the data set, given the application of a correction factor of 1.103. Soil depth and soil type significantly influenced on the recovery, defined as the ratio of SOCMWB to SOCCNS, and the recovery was closely associated with soil carbonate content and pH value as well. The differences of recovery between alpine meadow and steppe were largely driven by soil pH. In addition, statistically, a relatively strong correlation between SOCCNS and STC was also found, suggesting that it is feasible to estimate SOCCNS stocks through the STC data across the Tibetan grasslands. Therefore, our results suggest that in order to accurately estimate the absolute SOC stocks and its change in the Tibetan alpine grasslands, adequate correction of the modified WB measurements is essential with correct consideration of the effects of soil types, vegetation, soil pH and soil depth. PMID:25946085

Femtosecond pulsed laser micromachining of single crystalline 3C SiC structures based on a laser-induced defect-activation process

NASA Astrophysics Data System (ADS)

Dong, Yuanyuan; Zorman, Christian; Molian, Pal

2003-09-01

A femtosecond pulsed Ti:sapphire laser with a pulse width of 120 fs, a wavelength of 800 nm and a repetition rate of 1 kHz was employed for direct write patterning of single crystalline 3C-SiC thin films deposited on Si substrates. The ablation mechanism of SiC was investigated as a function of pulse energy. At high pulse energies (>1 µJ), ablation occurred via thermally dominated processes such as melting, boiling and vaporizing of single crystalline SiC. At low pulse energies, the ablation mechanism involved a defect-activation process that included the accumulation of defects, formation of nano-particles and vaporization of crystal boundaries, which contributed to well-defined and debris-free patterns in 3C-SiC thin films. The interactions between femtosecond laser pulses and the intrinsic lattice defects in epitaxially grown 3C-SiC films led to the generation of nano-particles. Micromechanical structures such as micromotor rotors and lateral resonators were patterned into 3C-SiC films using the defect-activation ablation mechanism.

Adolescent self-esteem, emotional learning disabilities, and significant others.

PubMed

Peck, D G

1981-01-01

This paper will primarily examine four concepts: emotional learning disabilities, adolescence, self-esteem, and the social-psychological concept of "significant others." Problems of definition will be discussed, with a literature review, and an attempt will be made to integrate all four of the above-mentioned concepts. The emphasis will be in applying a sociological perspective to an educational and growing problem: how do we (sic) educate students with some type of learning disability? What, if any, extra-curricular factors potentially affect in school learning behavior(s) of adolescents?

Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seo, D. H.; Das Arulsamy, A.; Rider, A. E.

A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si{sup 3+} and Si{sup 1+} ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nmmore » size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si{sup 1+} ions in a low substrate temperature range (227-327 deg. C). As low substrate temperatures ({<=}500 deg. C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.« less

Increased size selectivity of Si quantum dots on SiC at low substrate temperatures: An ion-assisted self-organization approach

NASA Astrophysics Data System (ADS)

Seo, D. H.; Rider, A. E.; Das Arulsamy, A.; Levchenko, I.; Ostrikov, K.

2010-01-01

A simple, effective, and innovative approach based on ion-assisted self-organization is proposed to synthesize size-selected Si quantum dots (QDs) on SiC substrates at low substrate temperatures. Using hybrid numerical simulations, the formation of Si QDs through a self-organization approach is investigated by taking into account two distinct cases of Si QD formation using the ionization energy approximation theory, which considers ionized in-fluxes containing Si3+ and Si1+ ions in the presence of a microscopic nonuniform electric field induced by a variable surface bias. The results show that the highest percentage of the surface coverage by 1 and 2 nm size-selected QDs was achieved using a bias of -20 V and ions in the lowest charge state, namely, Si1+ ions in a low substrate temperature range (227-327 °C). As low substrate temperatures (≤500 °C) are desirable from a technological point of view, because (i) low-temperature deposition techniques are compatible with current thin-film Si-based solar cell fabrication and (ii) high processing temperatures can frequently cause damage to other components in electronic devices and destroy the tandem structure of Si QD-based third-generation solar cells, our results are highly relevant to the development of the third-generation all-Si tandem photovoltaic solar cells.

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

2011-12-01

This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J.; Neudeck, P. G.; Lukco, D.; Trunek, A.; Spry, D.; Lampard, P.; Androjna, D.; Makel, D.; Ward, B.

2007-01-01

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

Collision dynamics of H+ + N2 at low energies based on time-dependent density-functional theory

NASA Astrophysics Data System (ADS)

Yu, W.; Zhang, Y.; Zhang, F. S.; Hutton, R.; Zou, Y.; Gao, C.-Z.; Wei, B.

2018-02-01

Using time-dependent density-functional theory at the level of local density approximation augmented by a self-interaction correction and coupled non-adiabatically to molecular dynamics, we study, from a theoretical perspective, scattering dynamics of the proton in collisions with the N2 molecule at 30 eV. Nine different collision configurations are employed to analyze the proton energy loss spectra, electron depletion, scattering angles and self-interaction effects. Our results agree qualitatively with the experimental data and previous theoretical calculations. The discrepancies are ascribed to the limitation of the theoretical models in use. We find that self-interaction effects can significantly influence the electron capture and the excited diatomic vibrational motion, which is in consistent with other calculations. In addition, it is found that the molecular structure can be readily retrieved from the proton energy loss spectra due to a significant momentum transfer in head-on collisions.

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Thermal: Differential Scanning Calorimetry (DSC), Thermogravimetric Analysis (TGA), and Polarized Microscopy Instrumentation for the Analysis of Field-Controlled Anisotropic Nanomaterials

DTIC Science & Technology

2014-11-14

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Characterization of ceramics and intermetallics fabricated by self-propagating high-temperature synthesis

NASA Technical Reports Server (NTRS)

Hurst, Janet B.

1989-01-01

Three efforts aimed at investigating the process of self-propagating high temperature synthesis (SHS) for the fabrication of structural ceramics and intermetallics are summarized. Of special interest was the influence of processing variables such as exothermic dopants, gravity, and green state morphology in materials produced by SHS. In the first effort directed toward the fabrication of SiC, exothermic dopants of yttrium and zirconium were added to SiO2 or SiO2 + NiO plus carbon powder mix and processed by SHS. This approach was unsuccessful since it did not produce the desired product of crystalline SiC. In the second effort, the influence of gravity was investigated by examining Ni-Al microstructures which were produced by SHS combustion waves traveling with and opposite the gravity direction. Although final composition and total porosities of the combusted Ni-Al compounds were found to be gravity independent, larger pores were created in those specimens which were combusted opposite to the gravity force direction. Finally, it was found that green microstructure has a significant effect on the appearance of the combusted piece. Severe pressing laminations were observed to arrest the combustion front for TiC samples.

Nanocrystalline SiC and Ti 3SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henager, Charles H.; Jiang, Weilin

2014-11-01

MAX phases, such as titanium silicon carbide (Ti 3SiC 2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3SiC 2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3SiC 2,more » SiC, and a dual-phase nanocomposite of Ti 3SiC 2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.« less

Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.; Hebsur, Mohan G.

2000-01-01

Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

Corrosion of Mullite by Molten Salts

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Lee, Kang N.; Yoshio, Tetsuo

1996-01-01

The interaction of molten salts of different Na2O activities and mullite is examined with furnace and burner tests. The more-acidic molten salts form small amounts of Al2O3; the more-basic molten salts form various Na2O-Al2O3-SiO2 compounds. The results are interpreted using the Na2O-Al203-SiO2 ternary phase diagram, and some possible diffusion paths are discussed. The generally higher melting points of Na2O-Al2O3-SiO2 compounds lead to better behavior of mullite in molten salts, as compared to SiO2-protected ceramics such as SiC. Mullite-coated SiC is discussed, and the corrosion behavior is evaluated.

Higher curvature self-interaction corrections to Hawking radiation

NASA Astrophysics Data System (ADS)

Fairoos, C.; Sarkar, Sudipta; Yogendran, K. P.

2017-07-01

The purely thermal nature of Hawking radiation from evaporating black holes leads to the information loss paradox. A possible route to its resolution could be if (enough) correlations are shown to be present in the radiation emitted from evaporating black holes. A reanalysis of Hawking's derivation including the effects of self-interactions in general relativity shows that the emitted radiation does deviate from pure thermality; however no correlations exist between successively emitted Hawking quanta. We extend the calculations to Einstein-Gauss-Bonnet gravity and investigate if higher curvature corrections to the action lead to some new correlations in the Hawking spectra. The effective trajectory of a massless shell is determined by solving the constraint equations and the semiclassical tunneling probability is calculated. As in the case of general relativity, the radiation is no longer thermal and there is no correlation between successive emissions. The absence of any extra correlations in the emitted radiations even in Gauss-Bonnet gravity suggests that the resolution of the paradox is beyond the scope of semiclassical gravity.

Characterizing protein-protein-interaction in high-concentration monoclonal antibody systems with the quartz crystal microbalance.

PubMed

Hartl, Josef; Peschel, Astrid; Johannsmann, Diethelm; Garidel, Patrick

2017-12-13

Making use of a quartz crystal microbalance (QCM), concentrated solutions of therapeutic antibodies were studied with respect to their behavior under shear excitation with frequencies in the MHz range. At high protein concentration and neutral pH, viscoelastic behavior was found in the sense that the storage modulus, G', was nonzero. Fits of the frequency dependence of G'(ω) and G''(ω) (G'' being the loss modulus) using the Maxwell-model produced good agreement with the experimental data. The fit parameters were the relaxation time, τ, and the shear modulus at the inverse relaxation time, G* (at the "cross-over frequency" ω C = 1/τ). The influence of two different pharmaceutical excipients (histidine and citrate) was studied at variable concentrations of the antibody and variable pH. In cases, where viscoelasticity was observed, G* was in the range of a few kPa, consistent with entropy-driven interactions. τ was small at low pH, where the antibody carries a positive charge. τ increased with increasing pH. The relaxation time τ was found to be correlated with other parameters quantifying protein-protein interactions, namely the steady shear viscosity (η), the second osmotic virial coefficient as determined with both self-interaction chromatography (B 22,SIC ) and static light scattering (B 22,SLS ), and the diffusion interaction parameter as determined with dynamic light scattering (k D ). While B 22 and k D describe protein-protein interactions in diluted samples, the QCM can be applied to concentrated solutions, thereby being sensitive to higher-order protein-protein interactions.

The role of the van der Waals interactions in the adsorption of anthracene and pentacene on the Ag(111) surface

NASA Astrophysics Data System (ADS)

Morbec, Juliana M.; Kratzer, Peter

2017-01-01

Using first-principles calculations based on density-functional theory (DFT), we investigated the effects of the van der Waals (vdW) interactions on the structural and electronic properties of anthracene and pentacene adsorbed on the Ag(111) surface. We found that the inclusion of vdW corrections strongly affects the binding of both anthracene/Ag(111) and pentacene/Ag(111), yielding adsorption heights and energies more consistent with the experimental results than standard DFT calculations with generalized gradient approximation (GGA). For anthracene/Ag(111) the effect of the vdW interactions is even more dramatic: we found that "pure" DFT-GGA calculations (without including vdW corrections) result in preference for a tilted configuration, in contrast to the experimental observations of flat-lying adsorption; including vdW corrections, on the other hand, alters the binding geometry of anthracene/Ag(111), favoring the flat configuration. The electronic structure obtained using a self-consistent vdW scheme was found to be nearly indistinguishable from the conventional DFT electronic structure once the correct vdW geometry is employed for these physisorbed systems. Moreover, we show that a vdW correction scheme based on a hybrid functional DFT calculation (HSE) results in an improved description of the highest occupied molecular level of the adsorbed molecules.

Silicon carbide ceramic membranes

NASA Astrophysics Data System (ADS)

Suwanmethanond, Varaporn

This dissertation focuses on the preparation of silicon carbide (SiC) ceramic membranes on SiC substrates. An original technique of SiC porous substrate preparation using sintering methods was developed during the work for the completion of the dissertation. The resulting SiC substrates have demonstrated high porosity, high internal surface area, well interconnected surface pore network and, at the same time, good thermal, chemical and mechanical stability. In a further development, sol-gel techniques were used to deposit micro-porous SiC membranes on these SiC porous substrates. The SiC membranes were characterized by a variety of techniques: ideal gas selectivity (He and N2), XRD, BET, SEM, XPS, and AFM. The characterization results confirmed that the asymmetric sol-gel SiC membranes were of high quality, with no cracks or pinholes, and exhibiting high resistance to corrosion and high hydro-thermal stability. In conclusion, the SiC ceramic membrane work was successfully completed. Two publications in international peer reviewed journals resulted out of this work.

Streptococcal inhibitor of complement promotes innate immune resistance phenotypes of invasive M1T1 group A Streptococcus.

PubMed

Pence, Morgan A; Rooijakkers, Suzan H M; Cogen, Anna L; Cole, Jason N; Hollands, Andrew; Gallo, Richard L; Nizet, Victor

2010-01-01

Streptococcal inhibitor of complement (SIC) is a highly polymorphic extracellular protein and putative virulence factor secreted by M1 and M57 strains of group A Streptococcus (GAS). The sic gene is highly upregulated in invasive M1T1 GAS isolates following selection of mutations in the covR/S regulatory locus in vivo. Previous work has shown that SIC (allelic form 1.01) binds to and inactivates complement C5b67 and human cathelicidin LL-37. We examined the contribution of SIC to innate immune resistance phenotypes of GAS in the intact organism, using (1) targeted deletion of sic in wild-type and animal-passaged (covS mutant) M1T1 GAS harboring the sic 1.84 allele and (2) heterologous expression of sic in M49 GAS, which does not possess the sic genein its genome. We find that M1T1 SIC production is strongly upregulated upon covS mutation but that the sic gene is not required for generation and selection of covS mutants in vivo. SIC 1.84 bound both human and murine cathelicidins and was necessary and sufficient to promote covS mutant M1T1 GAS resistance to LL-37, growth in human whole blood and virulence in a murine model of systemic infection. Finally, the sic knockout mutant M1T1 GAS strain was deficient in growth in human serum and intracellular macrophage survival. We conclude that SIC contributes to M1T1 GAS immune resistance and virulence phenotypes. Copyright © 2010 S. Karger AG, Basel.

Amino Acids in the Capsid Protein of Tomato Yellow Leaf Curl Virus That Are Crucial for Systemic Infection, Particle Formation, and Insect Transmission

PubMed Central

Noris, E.; Vaira, A. M.; Caciagli, P.; Masenga, V.; Gronenborn, B.; Accotto, G. P.

1998-01-01

A functional capsid protein (CP) is essential for host plant infection and insect transmission in monopartite geminiviruses. We studied two defective genomic DNAs of tomato yellow leaf curl virus (TYLCV), Sic and SicRcv. Sic, cloned from a field-infected tomato, was not infectious, whereas SicRcv, which spontaneously originated from Sic, was infectious but not whitefly transmissible. A single amino acid change in the CP was found to be responsible for restoring infectivity. When the amino acid sequences of the CPs of Sic and SicRcv were compared with that of a closely related wild-type virus (TYLCV-Sar), differences were found in the following positions: 129 (P in Sic and SicRcv, Q in Sar), 134 (Q in Sic and Sar, H in SicRcv) and 152 (E in Sic and SicRcv, D in Sar). We constructed TYLCV-Sar variants containing the eight possible amino acid combinations in those three positions and tested them for infectivity and transmissibility. QQD, QQE, QHD, and QHE had a wild-type phenotype, whereas PHD and PHE were infectious but nontransmissible. PQD and PQE mutants were not infectious; however, they replicated and accumulated CP, but not virions, in Nicotiana benthamiana leaf discs. The Q129P replacement is a nonconservative change, which may drastically alter the secondary structure of the CP and affect its ability to form the capsid. The additional Q134H change, however, appeared to compensate for the structural modification. Sequence comparisons among whitefly-transmitted geminiviruses in terms of the CP region studied showed that combinations other than QQD are present in several cases, but never with a P129. PMID:9811744

Structural, vibrational, and quasiparticle properties of the Peierls semiconductor BaBiO3 : A hybrid functional and self-consistent GW+vertex-corrections study

NASA Astrophysics Data System (ADS)

Franchini, C.; Sanna, A.; Marsman, M.; Kresse, G.

2010-02-01

BaBiO3 is characterized by a charge disproportionation with half of the Bi atoms possessing a valence 3+ and half a valence 5+ . Because of self-interaction errors, local- and semilocal-density functionals fail to describe the charge disproportionation quantitatively, yielding a too small structural distortion and no band gap. Using hybrid functionals, we obtain a satisfactory description of the structural, electronic, optical, and vibrational properties of BaBiO3 . The results obtained using GW (Green’s function G and screened Coulomb potential W) based schemes on top of hybrid functionals, including fully self-consistent GW calculations with vertex corrections in the dielectric screening, qualitatively confirm the Heyd-Scuseria-Ernzerhof picture but a systematic overestimation of the band gap by about 0.4 eV is observed.

Development of SiC Large Tapered Crystal Growth

NASA Technical Reports Server (NTRS)

Neudeck, Phil

2010-01-01

Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

Motivating drivers to correctly adjust head restraints: assessing effectiveness of three different interventions.

PubMed

Fockler, S K; Vavrik, J; Kristiansen, L

1998-11-01

Three types of driver educational strategies were tested to determine the most effective approach for motivating drivers to adjust their head restraints to the correct vertical position: (1) a human interactive personal contact with a member of an ICBC-trained head restraint adjustment team, (2) a passive video presentation of the consequences of correct and incorrect head restraint adjustment, and (3) an interactive three-dimensional kinetic model showing the consequences of correct and incorrect head restraint adjustment. An experimental pretest-posttest control group design was used. A different educational treatment was used in each of three lanes of a vehicle emissions testing facility, with a fourth lane with no intervention serving as a control group. Observational and self-reported data were obtained from a total of 1,974 vehicles entering and exiting the facility. The human intervention led to significantly more drivers actually adjusting their head restraints immediately after the intervention than the passive video or interactive kinetic model approaches, which were both no different from the control group. The human intervention was recommended as the most effective and was implemented successfully on a limited basis during 3 months of 1995 and again during 3 months of 1996.

Statistical Prediction of Sea Ice Concentration over Arctic

NASA Astrophysics Data System (ADS)

Kim, Jongho; Jeong, Jee-Hoon; Kim, Baek-Min

2017-04-01

In this study, a statistical method that predict sea ice concentration (SIC) over the Arctic is developed. We first calculate the Season-reliant Empirical Orthogonal Functions (S-EOFs) of monthly Arctic SIC from Nimbus-7 SMMR and DMSP SSM/I-SSMIS Passive Microwave Data, which contain the seasonal cycles (12 months long) of dominant SIC anomaly patterns. Then, the current SIC state index is determined by projecting observed SIC anomalies for latest 12 months to the S-EOFs. Assuming the current SIC anomalies follow the spatio-temporal evolution in the S-EOFs, we project the future (upto 12 months) SIC anomalies by multiplying the SI and the corresponding S-EOF and then taking summation. The predictive skill is assessed by hindcast experiments initialized at all the months for 1980-2010. When comparing predictive skill of SIC predicted by statistical model and NCEP CFS v2, the statistical model shows a higher skill in predicting sea ice concentration and extent.

Dip-coating of nano-sized CeO2 on SiC membrane and its effect on thermal diffusivity.

PubMed

Park, Jihye; Jung, Miewon

2014-05-01

CeO2-SiC mixed composite membrane was fabricated with porous SiC ceramic and cerium oxide powder synthesized by sol-gel process. This CeO2-SiC membrane and SiC membrane which is made by the purified SiC ceramic were pressed and sintered in Ar atmosphere. And then, the SiC membrane was dip-coated by cerium oxide precursor sol solution and heat-treated in air. The surface morphology, particle size, porosity and structure analysis of the mixing and dip-coating SiC membrane were monitored by FE-SEM and X-ray diffraction analysis. Surface area, pore volume and pore diameter were determined by BET instrument. Thermal diffusivity was measured by laser flash method with increasing temperature. The relation between porosity and thermal diffusivity from different preparation process has been discussed on this study.

Natural occurrence of silicon carbide in a diamondiferous kimberlite from Fuxian

USGS Publications Warehouse

Leung, I.; Guo, W.; Friedman, I.; Gleason, J.

1990-01-01

Considerable debate surrounds the existence of silicon carbide in nature, mostly owing to the problem of possible contamination by man-made SiC. Recently, Gurney1 reviewed reports of rare SiC inclusions in diamonds, and noted that SiC can only be regarded as a probable rather than proven cogenetic mineral. Here we report our observation of clusters of SiC coexisting with diamond in a kimberlite from Fuxian, China. Macrocrysts of ??-SiC are overgrown epitaxially by ??-SiC, and both polymorphs are structurally well ordered. We have also measured the carbon isotope compositions of SiC and diamonds from Fuxian. We find that SiC is more enriched in 12C than diamond by 20% relative to the PDB standard. Isotope fractionation might have occurred through an isotope exchange reaction in a common carbon reservoir. Silicon carbide may thus ultimately provide information on carbon cycling in the Earth's mantle.

Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

NASA Astrophysics Data System (ADS)

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

2015-05-01

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

12 CFR 1002.15 - Incentives for self-testing and self-correction.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 12 Banks and Banking 8 2013-01-01 2013-01-01 false Incentives for self-testing and self-correction... OPPORTUNITY ACT (REGULATION B) § 1002.15 Incentives for self-testing and self-correction. (a) General rules—(1) Voluntary self-testing and correction. The report or results of a self-test that a creditor voluntarily...

12 CFR 202.15 - Incentives for self-testing and self-correction.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 12 Banks and Banking 2 2014-01-01 2014-01-01 false Incentives for self-testing and self-correction... RESERVE SYSTEM EQUAL CREDIT OPPORTUNITY ACT (REGULATION B) § 202.15 Incentives for self-testing and self-correction. (a) General rules—(1) Voluntary self-testing and correction. The report or results of a self-test...

12 CFR 1002.15 - Incentives for self-testing and self-correction.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 12 Banks and Banking 8 2012-01-01 2012-01-01 false Incentives for self-testing and self-correction... OPPORTUNITY ACT (REGULATION B) § 1002.15 Incentives for self-testing and self-correction. (a) General rules—(1) Voluntary self-testing and correction. The report or results of a self-test that a creditor voluntarily...

12 CFR 202.15 - Incentives for self-testing and self-correction.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 12 Banks and Banking 2 2013-01-01 2013-01-01 false Incentives for self-testing and self-correction... RESERVE SYSTEM EQUAL CREDIT OPPORTUNITY ACT (REGULATION B) § 202.15 Incentives for self-testing and self-correction. (a) General rules—(1) Voluntary self-testing and correction. The report or results of a self-test...

12 CFR 1002.15 - Incentives for self-testing and self-correction.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 12 Banks and Banking 8 2014-01-01 2014-01-01 false Incentives for self-testing and self-correction... OPPORTUNITY ACT (REGULATION B) § 1002.15 Incentives for self-testing and self-correction. (a) General rules—(1) Voluntary self-testing and correction. The report or results of a self-test that a creditor voluntarily...

12 CFR 202.15 - Incentives for self-testing and self-correction.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 12 Banks and Banking 2 2011-01-01 2011-01-01 false Incentives for self-testing and self-correction... RESERVE SYSTEM EQUAL CREDIT OPPORTUNITY ACT (REGULATION B) § 202.15 Incentives for self-testing and self-correction. (a) General rules—(1) Voluntary self-testing and correction. The report or results of a self-test...

12 CFR 202.15 - Incentives for self-testing and self-correction.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 12 Banks and Banking 2 2012-01-01 2012-01-01 false Incentives for self-testing and self-correction... RESERVE SYSTEM EQUAL CREDIT OPPORTUNITY ACT (REGULATION B) § 202.15 Incentives for self-testing and self-correction. (a) General rules—(1) Voluntary self-testing and correction. The report or results of a self-test...

Performance and Self-Consistency of the Generalized Dielectric Dependent Hybrid Functional

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brawand, Nicholas P.; Govoni, Marco; Vörös, Márton

Here, we analyze the performance of the recently proposed screened exchange constant functional (SX) on the GW100 test set, and we discuss results obtained at different levels of self-consistency. The SX functional is a generalization of dielectric dependent hybrid functionals to finite systems; it is nonempirical and depends on the average screening of the exchange interaction. We compare results for ionization potentials obtained with SX to those of CCSD(T) calculations and experiments, and we find excellent agreement, on par with recent state of the art methods based on many body perturbation theory. Applying SX perturbatively to correct PBE eigenvalues yieldsmore » improved results in most cases, except for ionic molecules, for which wave function self-consistency is instead crucial. Calculations where wave functions and the screened exchange constant (α SX) are determined self-consistently, and those where α SX is fixed to the value determined within PBE, yield results of comparable accuracy. Perturbative G 0W 0 corrections of eigenvalues obtained with self-consistent αSX are small on average, for all molecules in the GW100 test set.« less

Performance and Self-Consistency of the Generalized Dielectric Dependent Hybrid Functional

DOE PAGES

Brawand, Nicholas P.; Govoni, Marco; Vörös, Márton; ...

2017-05-24

Here, we analyze the performance of the recently proposed screened exchange constant functional (SX) on the GW100 test set, and we discuss results obtained at different levels of self-consistency. The SX functional is a generalization of dielectric dependent hybrid functionals to finite systems; it is nonempirical and depends on the average screening of the exchange interaction. We compare results for ionization potentials obtained with SX to those of CCSD(T) calculations and experiments, and we find excellent agreement, on par with recent state of the art methods based on many body perturbation theory. Applying SX perturbatively to correct PBE eigenvalues yieldsmore » improved results in most cases, except for ionic molecules, for which wave function self-consistency is instead crucial. Calculations where wave functions and the screened exchange constant (α SX) are determined self-consistently, and those where α SX is fixed to the value determined within PBE, yield results of comparable accuracy. Perturbative G 0W 0 corrections of eigenvalues obtained with self-consistent αSX are small on average, for all molecules in the GW100 test set.« less

75 FR 43219 - Self-Regulatory Organizations; NASDAQ OMX PHLX, Inc.; Notice of Filing and Immediate...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-07-23

... additional complex order business, specifically by amending the equity options fees to pay a $0.05 rebate per... maximum of the Firm Related Equity Option Cap, will help defray the cost of paying the $0.05 per contract... proposes [sic] amend its Section II equity options fees to: (i) Pay a $0.05 per contract side rebate to...

Self-standing silicon-carbon nanotube/graphene by a scalable in situ approach from low-cost Al-Si alloy powder for lithium ion batteries

NASA Astrophysics Data System (ADS)

Cai, Hongyan; Han, Kai; Jiang, Heng; Wang, Jingwen; Liu, Hui

2017-10-01

Silicon/carbon (Si/C) composite shows great potential to replace graphite as lithium-ion battery (LIB) anode owing to its high theoretical capacity. Exploring low-cost scalable approach for synthesizing Si/C composites with excellent electrochemical performance is critical for practical application of Si/C anodes. In this study, we rationally applied a scalable in situ approach to produce Si-carbon nanotube (Si-CNT) composite via acid etching of commercial inexpensive micro-sized Al-Si alloy powder and CNT mixture. In the Si-CNT composite, ∼10 nm Si particles were uniformly deposited on the CNT surface. After combining with graphene sheets, a flexible self-standing Si-CNT/graphene paper was fabricated with three-dimensional (3D) sandwich-like structure. The in situ presence of CNT during acid-etching process shows remarkable two advantages: providing deposition sites for Si atoms to restrain agglomeration of Si nanoparticles after Al removal from Al-Si alloy powder, increasing the cross-layer conductivity of the paper anode to provide excellent conductive contact sites for each Si nanoparticles. When used as binder-free anode for LIBs without any further treatment, in situ addition of CNT especially plays important role to improve the initial electrochemical activity of Si nanoparticles synthesized from low-cost Al-Si alloy powder, thus resulting in about twice higher capacity than Si/G paper anode. The self-standing Si-CNT/graphene paper anode exhibited a high specific capacity of 1100 mAh g-1 even after 100 cycles at 200 mA g-1 current density with a Coulombic efficiency of >99%. It also showed remarkable rate capability improvement compared to Si/G paper without CNT. The present work demonstrates a low-cost scalable in situ approach from commercial micro-sized Al-Si alloy powder for Si-based composites with specific nanostructure. The Si-CNT/graphene paper is a promising anode candidate with high capacity and cycling stability for LIBs, especially for the flexible batteries application.

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

Ego Boundary Deficits and the Negative Therapeutic Inter-Action: A Tale of a Whale, a Whale of a Tale.

PubMed

Peterson, Charles A

2017-06-01

Defined variously and unsatisfactorily as a worsening of the patient's condition following a correct interpretation, the negative therapeutic reaction is typically blamed on the patient: "the operation was a success but the patient died." For most neurotic patients unconscious guilt objects to progress and activates the need to suffer. For most character-disturbed patients envy cannot bear the analyst's cleverness. However, patients with ego boundary problems-even sectors of psychosis-may require a different explanatory mechanism, where a correct interpretation may be experienced as a penetration and an engulfment, threatening the intactness of the self. A short-term, time-limited, psychoanalytic psychotherapy that went off the rails following a correct but ill-timed interpretation is presented as an opportunity to amend analytic theory, here favoring the interactional over the intrapsychic. Herman Melville helps tell the tale.

Adaptive Correction from Virtually Complex Dynamic Libraries: The Role of Noncovalent Interactions in Structural Selection and Folding.

PubMed

Lafuente, Maria; Atcher, Joan; Solà, Jordi; Alfonso, Ignacio

2015-11-16

The hierarchical self-assembling of complex molecular systems is dictated by the chemical and structural information stored in their components. This information can be expressed through an adaptive process that determines the structurally fittest assembly under given environmental conditions. We have set up complex disulfide-based dynamic covalent libraries of chemically and topologically diverse pseudopeptidic compounds. We show how the reaction evolves from very complex mixtures at short reaction times to the almost exclusive formation of a major compound, through the establishment of intramolecular noncovalent interactions. Our experiments demonstrate that the systems evolve through error-check and error-correction processes. The nature of these interactions, the importance of the folding and the effects of the environment are also discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

40 CFR 432.1 - General Applicability.

Code of Federal Regulations, 2011 CFR

2011-07-01

... STANDARDS MEAT AND POULTRY PRODUCTS POINT SOURCE CATEGORY § 432.1 General Applicability. As defined more... the following industrial classification codes: Standard industrial classification 1 North Americanindustrial classification system 2 SIC 0751 NAICS 311611. SIC 2011 NAICS 311612. SIC 2013 NAICS 311615. SIC...

Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers

NASA Technical Reports Server (NTRS)

Powell, J. Anthony (Inventor)

1993-01-01

The invention is a method for growing homoepitaxial films of SiC on low tilt angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of preparing the growth surface of SiC wafers slightly off-axis (from less the 0.1 to 6 deg) from the (0001) plane, subjecting the growth surface to a suitable etch, and then growing the homoepitaxial film using conventional SiC growth techniques.

Electron doping through lithium intercalation to interstitial channels in tetrahedrally bonded SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Yuki; Center for Computational Materials, Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712; Oshiyama, Atsushi

2015-11-07

We report on first-principles calculations that clarify the effect of lithium atom intercalation into zinc blende 3C-silicon carbide (3C-SiC) on electronic and structural properties. Lithium atoms inside 3C-SiC are found to donate electrons to 3C-SiC that is an indication of a new way of electron doping through the intercalation. The electrons doped into the conduction band interact with lithium cations and reduce the band spacing between the original valence and conduction bands. We have also found that a silicon monovacancy in 3C-SiC promotes the lithium intercalation, showing that the vacancy generation makes SiC as a possible anode material for lithium-ionmore » battery.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rabin, B.H.

This paper reports on a ceramic joining technique that has been developed that utilizes an exothermic combustion reaction to simultaneously synthesize the joint interlayer material and to bond together the ceramic workpieces. The method has been used to join SiC ceramics using Ti-C-Ni powder mixtures that ignite below 1200{degrees} C to form a TiC-Ni joining material. Thin layers of the powder reactants were prepared by tape casting, and joining was accomplished by heating in a hot-press to ignite the combustion reaction. during this process, localized exothermic heating of the joint region resulted in chemical interaction at the interface between themore » TiC-Ni and the SiC ceramic that contributed to bonding. Room-temperature four-point bending strengths of joints produced by this method have exceeded 100 MPa.« less

Tunneling Spectroscopy Studies of Epitaxial Graphene on Silicon Carbide(0001) and Its Interfaces

NASA Astrophysics Data System (ADS)

Sandin, Andreas Axel Tomas

A two dimensional network of sp2 bonded carbon atoms is defined as graphene. This novel material possesses remarkable electronic properties due to its unique band structure at the vicinity of the Fermi energy. The toughest challenge to bring use of graphene electronic properties in device geometries is that graphene is exceptionally sensitive to its electrical environment for integration into macroscopic system of electrical contacts and substrates. One of the most promising substrates for graphene is the polar surfaces of SiC for the reason it can be grown epitaxially by sublimating Si from the top-most SiC atomic layers. In this work, the interfaces of graphene grown on the Si-terminated polar surface SiC(0001) is studied in UHV using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), low energy electron diffraction (LEED) and auger electron Spectroscopy (AES). STM is used image the graphene surface and interfaces with the capability of atomic resolution. LEED is used to study surface atomic reciprocal ordering and AES is used to determine surface atomic composition during the graphene formation. Interfacial layer (Buffer layer), Single layer graphene and bilayer graphene are identified electronically by means of probing the first member of the image potential derived state. This state is found by dZ/dV spectroscopy in the high energy unoccupied states and is exceptionally sensitive to electrostatic changes to the surface which is detected by energy shifts of image potential states (IPS). This sensitivity is utilized to probe the graphene screening of external electric fields by varying the electric field in the tunneling junction and addresses the fact that charged impurity scattering is likely to be crucial for epitaxial graphene on SiC(0001) when it comes to transport parameters. Shifts of IPS energy position has also been used verify work function changes for identification of several Sodium Intercalation structures of epitaxial graphene. STS, STM along with DFT calculations are used to determine the interface location of Sodium, SiC-bufferlayer or bufferlayer-graphene intercalation. In this thesis, STM, and STS are used to study the interactions of paramagnetic FePc molecules with epitaxial graphene. The molecules, FePc, is found to interact with the graphene substrate where STM images show substrate induced orientation of FePc densely packed square lattice structure. At sub-monolayer coverages, FePc form a molecular gas at room temperature suggesting a low diffusion barrier on the graphene lattice. The substrate interaction is probed by STS and show an abnormally low LUMO energy that suggest strong electronic coupling between graphene and FePc. DFT calculations support the experimental observations and predict a spin-dependent molecule-graphene hybridization close to the Fermi energy in unoccupied states. For majority spins, DFT demonstrates the Dirac cone splits and a delocalized hybrid state is found in the band gap. For minority spin the Dirac cone is intact with energy of Dirac point empty. In addition, a novel method of improving UHV graphene growth on SiC(0001) is presented. During growth the SiC surface is exposed to atomic hydrogen which allows selective etching of Si over Carbon. This result in more uniform non-thermal formation of the buffer layer with many fewer defects and thus leads to nearly pit-free and defect-free thermal graphene layers.

Mechanical properties of hybrid SiC/CNT filled toughened epoxy nanocomposite

NASA Astrophysics Data System (ADS)

Ratim, S.; Ahmad, S.; Bonnia, N. N.; Yahaya, Sabrina M.

2018-01-01

Mechanical properties of epoxy nanocomposites filled single filler have been extensively studied by various researchers. However, there are not much discovery on the behavior of hybrid nanocomposite. In this study, single and hybrid nanocomposites of toughened epoxy filled CNT/SiC nanoparticles were investigated. The hybrid nanocomposites samples were prepared by combining CNT and SiC nanoparticles in toughened epoxy matrix via mechanical stirring method assisted with ultrasonic cavitations. Epoxy resin and liquid epoxidized natural rubber (LENR) mixture were first blend prior to the addition of nanofillers. Then, the curing process of the nanocomposite samples were conducted by compression molding technique at 130°C for 2 hours. The purpose of this study is to investigate the hybridization effect of CNT and SiC nanoparticles on mechanical properties toughened epoxy matrix. The total loading of single and hybrid nanofillers were fixed to 4% volume are 0, 4C, 4S, 3S1C, 2S2C, and 1S3C. Mechanical properties of hybrid composites show that the highest value of tensile strength achieved by 3S1C sample at about 7% increment and falls between their single composite values. Meanwhile, the stiffness of the same sample is significantly increased at about 31% of the matrix. On the other hand, a highest flexural property is obtained by 1S3C sample at about 20% increment dominated by CNT content. However, the impact strength shows reduction trend with the addition of SiC and CNT into the matrix. The hybridization of SiC and CNT show highest value in sample 1S3C at about 3.37 kJ/m2 of impact energy absorbed. FESEM micrograph have confirmed that better distributions and interaction observed between SiC nanoparticles and matrix compared to CNT, which contributed to higher tensile strength and modulus.

Response theory of the ergodic many-body delocalized phase: Keldysh Finkel'stein sigma models and the 10-fold way

NASA Astrophysics Data System (ADS)

Liao, Yunxiang; Levchenko, Alex; Foster, Matthew S.

2017-11-01

We derive the finite temperature Keldysh response theory for interacting fermions in the presence of quenched short-ranged disorder, as applicable to any of the 10 Altland-Zirnbauer classes in an Anderson delocalized phase with at least a U(1) continuous symmetry. In this formulation of the interacting Finkel'stein nonlinear sigma model, the statistics of one-body wave functions are encoded by the constrained matrix field, while physical correlations follow from the hydrodynamic density or spin response field, which decouples the interactions. Integrating out the matrix field first, we obtain weak (anti) localization and Altshuler-Aronov quantum conductance corrections from the hydrodynamic response function. This procedure automatically incorporates the correct infrared cutoff physics, and in particular gives the Altshuler-Aronov-Khmelnitsky (AAK) equations for dephasing of weak (anti)localization due to electron-electron collisions. We explicate the method by deriving known quantumcorrections in two dimensions for the symplectic metal class AII, as well as the spin-SU(2) invariant superconductor classes C and CI. We show that quantum conductance corrections due to the special modes at zero energy in nonstandard classes are automatically cut off by temperature, as previously expected, while the Wigner-Dyson class Cooperon modes that persist to all energies are cut by dephasing. We also show that for short-ranged interactions, the standard self-consistent solution for the dephasing rate is equivalent to a particular summation of diagrams via the self-consistent Born approximation. This should be compared to the corresponding AAK solution for long-ranged Coulomb interactions, which exploits the Markovian noise correlations induced by thermal fluctuations of the electromagnetic field. We discuss prospects for exploring the many-body localization transition as a dephasing catastrophe in short-range interacting models, as encountered by approaching from the ergodic side.

Photoluminescence of etched SiC nanowires

NASA Astrophysics Data System (ADS)

Stewart, Polite D., Jr.; Rich, Ryan; Zerda, T. W.

2010-10-01

SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100^oC and 1350^oC. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The compound possesses a high melting point, high thermal conductivity, and excellent wear resistance. The surface of the SiC nanowires after formation is covered by an amorphous layer. The composition of that layer is not fully understood, but it is believed that in addition to amorphous SiC it contains various carbon and silicon compounds, and SiO2. The objective of the research was to modify the surface structure of these SiC nanowires. Modification of the surface was done using the wet etching method. The etched nanowires were then analyzed using Fourier Transform Infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and photoluminescence (PL). FTIR and TEM analysis provided valid proof that the SiC nanowires were successfully etched. Also, the PL results showed that the SiC nanowire core did possess a fluorescent signal.

Chemical reactivity of CVC and CVD SiC with UO 2 at high temperatures

DOE PAGES

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; ...

2015-02-11

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO 2 pellets and evaluated for their potential chemical reaction with UO 2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO 2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO 2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive thanmore » CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi 2, and U 3Si 2 as a result of SiC reaction with UO 2.« less

Measuring the Social Competence of Preschool Children with Specific Language Impairment: Correspondence among Informant Ratings and Behavioral Observations

ERIC Educational Resources Information Center

McCabe, Paul C.; Marshall, Debra J.

2006-01-01

The correspondence between direct observation and informant ratings of preschool children with specific language impairment (SLI) was investigated. Preschoolers with and without SLI were observed during free play using the "Social Interactive Coding System" (SICS; Rice, Sell, & Hadley, 1990). In addition, teachers and parents…

The usefulness of "corrected" body mass index vs. self-reported body mass index: comparing the population distributions, sensitivity, specificity, and predictive utility of three correction equations using Canadian population-based data.

PubMed

Dutton, Daniel J; McLaren, Lindsay

2014-05-06

National data on body mass index (BMI), computed from self-reported height and weight, is readily available for many populations including the Canadian population. Because self-reported weight is found to be systematically under-reported, it has been proposed that the bias in self-reported BMI can be corrected using equations derived from data sets which include both self-reported and measured height and weight. Such correction equations have been developed and adopted. We aim to evaluate the usefulness (i.e., distributional similarity; sensitivity and specificity; and predictive utility vis-à-vis disease outcomes) of existing and new correction equations in population-based research. The Canadian Community Health Surveys from 2005 and 2008 include both measured and self-reported values of height and weight, which allows for construction and evaluation of correction equations. We focused on adults age 18-65, and compared three correction equations (two correcting weight only, and one correcting BMI) against self-reported and measured BMI. We first compared population distributions of BMI. Second, we compared the sensitivity and specificity of self-reported BMI and corrected BMI against measured BMI. Third, we compared the self-reported and corrected BMI in terms of association with health outcomes using logistic regression. All corrections outperformed self-report when estimating the full BMI distribution; the weight-only correction outperformed the BMI-only correction for females in the 23-28 kg/m2 BMI range. In terms of sensitivity/specificity, when estimating obesity prevalence, corrected values of BMI (from any equation) were superior to self-report. In terms of modelling BMI-disease outcome associations, findings were mixed, with no correction proving consistently superior to self-report. If researchers are interested in modelling the full population distribution of BMI, or estimating the prevalence of obesity in a population, then a correction of any kind included in this study is recommended. If the researcher is interested in using BMI as a predictor variable for modelling disease, then both self-reported and corrected BMI result in biased estimates of association.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

Diodes of nanocrystalline SiC on n-/n+-type epitaxial crystalline 6H-SiC

NASA Astrophysics Data System (ADS)

Zheng, Junding; Wei, Wensheng; Zhang, Chunxi; He, Mingchang; Li, Chang

2018-03-01

The diodes of nanocrystalline SiC on epitaxial crystalline (n-/n+)6H-SiC wafers were investigated, where the (n+)6H-SiC layer was treated as cathode. For the first unit, a heavily boron doped SiC film as anode was directly deposited by plasma enhanced chemical vapor deposition method on the wafer. As to the second one, an intrinsic SiC film was fabricated to insert between the wafer and the SiC anode. The third one included the SiC anode, an intrinsic SiC layer and a lightly phosphorus doped SiC film besides the wafer. Nanocrystallization in the yielded films was illustrated by means of X-ray diffraction, transmission electronic microscope and Raman spectrum respectively. Current vs. voltage traces of the obtained devices were checked to show as rectifying behaviors of semiconductor diodes, the conduction mechanisms were studied. Reverse recovery current waveforms were detected to analyze the recovery performance. The nanocrystalline SiC films in base region of the fabricated diodes are demonstrated as local regions for lifetime control of minority carriers to improve the reverse recovery properties.

Effects of in situ synthesized mullite whisker on mechanical properties of Al2O3-SiC composite by microwave sintering

NASA Astrophysics Data System (ADS)

Dang, Xudan; Wei, Meng; Fan, Bingbing; Guan, Keke; Zhang, Rui; Long, Weimin; Zhang, Hongsong

2017-06-01

In situ synthesis of mullite whisker was introduced to Al2O3-SiC composite by microwave sintering. The effects of sintering parameters (sintering temperature, holding time and SiC particle size) on thermal shock resistance of Al2O3-SiC composite were also studied in this paper. Original SiC particles coated with SiO2 by a sol-gel method were reacted with Al2O3 particles, resulting in the in situ growth of mullite. The phase composition was identified by x-ray diffraction (XRD). The bridging of mullite whisker between Al2O3 and SiC particles was observed by scanning electron microscopy (SEM) analysis. The thermal shock resistance of samples was investigated through the combination of water quenching and three-point bending methods. The results show that the thermal shock resistance of Al2O3-SiC composite with mullite whisker reinforced remarkably, indicating better mechanical properties than the Al2O3-SiC composite without mullite whisker. Finally, the optimum process parameters (the sintering temperature of 1500 °C, the holding time of 30 min, and the SiC particle size of 5 µm) for toughening Al2O3-SiC composite by in situ synthesized mullite whisker were obtained.

Self-assembled lipid bilayer materials

DOEpatents

Sasaki, Darryl Y.; Waggoner, Tina A.; Last, Julie A.

2005-11-08

The present invention is a self-assembling material comprised of stacks of lipid bilayers formed in a columnar structure, where the assembly process is mediated and regulated by chemical recognition events. The material, through the chemical recognition interactions, has a self-regulating system that corrects the radial size of the assembly creating a uniform diameter throughout most of the structure. The materials form and are stable in aqueous solution. These materials are useful as structural elements for the architecture of materials and components in nanotechnology, efficient light harvesting systems for optical sensing, chemical processing centers, and drug delivery vehicles.

Does a Relationship Between Arctic Low Clouds and Sea Ice Matter?

NASA Technical Reports Server (NTRS)

Taylor, Patrick C.

2016-01-01

Arctic low clouds strongly affect the Arctic surface energy budget. Through this impact Arctic low clouds influence important aspects of the Arctic climate system, namely surface and atmospheric temperature, sea ice extent and thickness, and atmospheric circulation. Arctic clouds are in turn influenced by these elements of the Arctic climate system, and these interactions create the potential for Arctic cloud-climate feedbacks. To further our understanding of potential Arctic cloudclimate feedbacks, the goal of this paper is to quantify the influence of atmospheric state on the surface cloud radiative effect (CRE) and its covariation with sea ice concentration (SIC). We build on previous research using instantaneous, active remote sensing satellite footprint data from the NASA A-Train. First, the results indicate significant differences in the surface CRE when stratified by atmospheric state. Second, there is a weak covariation between CRE and SIC for most atmospheric conditions. Third, the results show statistically significant differences in the average surface CRE under different SIC values in fall indicating a 3-5 W m(exp -2) larger LW CRE in 0% versus 100% SIC footprints. Because systematic changes on the order of 1 W m(exp -2) are sufficient to explain the observed long-term reductions in sea ice extent, our results indicate a potentially significant amplifying sea ice-cloud feedback, under certain meteorological conditions, that could delay the fall freeze-up and influence the variability in sea ice extent and volume. Lastly, a small change in the frequency of occurrence of atmosphere states may yield a larger Arctic cloud feedback than any cloud response to sea ice.

Advanced fuels modeling: Evaluating the steady-state performance of carbide fuel in helium-cooled reactors using FRAPCON 3.4

NASA Astrophysics Data System (ADS)

Hallman, Luther, Jr.

Uranium carbide (UC) has long been considered a potential alternative to uranium dioxide (UO2) fuel, especially in the context of Gen IV gas-cooled reactors. It has shown promise because of its high uranium density, good irradiation stability, and especially high thermal conductivity. Despite its many benefits, UC is known to swell at a rate twice that of UO2. However, the swelling phenomenon is not well understood, and we are limited to a weak empirical understanding of the swelling mechanism. One suggested cladding for UC is silicon carbide (SiC), a ceramic that demonstrates a number of desirable properties. Among them are an increased corrosion resistance, high mechanical strength, and irradiation stability. However, with increased temperatures, SiC exhibits an extremely brittle nature. The brittle behavior of SiC is not fully understood and thus it is unknown how SiC would respond to the added stress of a swelling UC fuel. To better understand the interaction between these advanced materials, each has been implemented into FRAPCON, the preferred fuel performance code of the Nuclear Regulatory Commission (NRC); additionally, the material properties for a helium coolant have been incorporated. The implementation of UC within FRAPCON required the development of material models that described not only the thermophysical properties of UC, such as thermal conductivity and thermal expansion, but also models for the swelling, densification, and fission gas release associated with the fuel's irradiation behavior. This research is intended to supplement ongoing analysis of the performance and behavior of uranium carbide and silicon carbide in a helium-cooled reactor.

Defects in Ceramic Matrix Composites and Their Impact on Elastic Properties (Postprint)

DTIC Science & Technology

2013-07-01

numerically modeled. The composite under investigation was a 10 layer T300 carbon/ SiC composite in which carbon fabric was impregnated using a polymer ...fraction. (3) Melt Infiltrated in situ BN SiC / SiC composite comprising a stochiometric SiC (Sylramic™) fiber, with an in situ boron nitride treatment...SiNC composite is listed in Table 4. Polymer derived SiC and SiNC matrix material do not ex- hibit a major change in their elastic properties at

Exposed and embedded corrections in aphasia therapy: issues of voice and identity.

PubMed

Simmons-Mackie, Nina; Damico, Jack S

2008-01-01

Because communication after the onset of aphasia can be fraught with errors, therapist corrections are pervasive in therapy for aphasia. Although corrections are designed to improve the accuracy of communication, some corrections can have social and emotional consequences during interactions. That is, exposure of errors can potentially silence the 'voice' of a speaker by orienting to an utterance as unacceptable. Although corrections can marginalize speakers with aphasia, the practice has not been widely investigated. A qualitative study of corrections during aphasia therapy was undertaken to describe corrections in therapy, identify patterns of occurrence, and develop hypotheses regarding the potential effects of corrections. Videotapes of six individual and five group aphasia therapy sessions were analysed. Sequences consistent with a definition of a therapist 'correction' were identified. Corrections were defined as instances when the therapist offered a 'fix' for a perceived error in the client's talk even though the intent was apparent. Two categories of correction were identified and were consistent with Jefferson's (1987) descriptions of exposed and embedded corrections. Exposed corrections involved explicit correcting by the therapist, while embedded corrections occurred implicitly within the ongoing talk. Patterns of occurrence appeared consistent with philosophical orientations of therapy sessions. Exposed corrections were more prevalent in sessions focusing on repairing deficits, while embedded corrections were prevalent in sessions focusing on natural communication events (e.g. conversation). In addition, exposed corrections were sometimes used when client offerings were plausible or appropriate, but were inconsistent with therapist expectations. The observation that some instances of exposed corrections effectively silenced the voice or self-expression of the person with aphasia has significant implications for outcomes from aphasia therapy. By focusing on accurate productions versus communicative intents, therapy runs the risk of reducing self-esteem and communicative confidence, as well as reinforcing a sense of 'helplessness' and disempowerment among people with aphasia. The results suggest that clinicians should carefully calibrate the use of exposed and embedded corrections to balance linguistic and psychosocial goals.

Gravitational radiation quadrupole formula is valid for gravitationally interacting systems

NASA Technical Reports Server (NTRS)

Walker, M.; Will, C. M.

1980-01-01

An argument is presented for the validity of the quadrupole formula for gravitational radiation energy loss in the far field of nearly Newtonian (e.g., binary stellar) systems. This argument differs from earlier ones in that it determines beforehand the formal accuracy of approximation required to describe gravitationally self-interacting systems, uses the corresponding approximate equation of motion explicitly, and evaluates the appropriate asymptotic quantities by matching along the correct space-time light cones.

Determination of the pure silicon monocarbide content of silicon carbide and products based on silicon carbide

NASA Technical Reports Server (NTRS)

Prost, L.; Pauillac, A.

1978-01-01

Experience has shown that different methods of analysis of SiC products give different results. Methods identified as AFNOR, FEPA, and manufacturer P, currently used to detect SiC, free C, free Si, free Fe, and SiO2 are reviewed. The AFNOR method gives lower SiC content, attributed to destruction of SiC by grinding. Two products sent to independent labs for analysis by the AFNOR and FEPA methods showed somewhat different results, especially for SiC, SiO2, and Al2O3 content, whereas an X-ray analysis showed a SiC content approximately 10 points lower than by chemical methods.

SiC As An Energetic Particle Detector

NASA Technical Reports Server (NTRS)

Yan, F.; Hicks, J.; Shappirio, Mark D.; Brown, S.; Smith, C.; Xin, X.; Zhao, J. H.

2005-01-01

Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SIC) since its band gap is larger than that of pure silicon, reducing its dark current and making SIC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower.

Surgical Informed Consent Process in Neurosurgery

PubMed Central

Park, Jaechan; Park, Hyojin

2017-01-01

The doctrine of informed consent, as opposed to medical paternalism, is intended to facilitate patient autonomy by allowing patient participation in the medical decision-making process. However, regrettably, the surgical informed consent (SIC) process is invariably underestimated and reduced to a documentary procedure to protect physicians from legal liability. Moreover, residents are rarely trained in the clinical and communicative skills required for the SIC process. Accordingly, to increase professional awareness of the SIC process, a brief history and introduction to the current elements of SIC, the obstacles to patient autonomy and SIC, benefits and drawbacks of SIC, planning of an optimal SIC process, and its application to cases of an unruptured intracranial aneurysm are all presented. Optimal informed consent process can provide patients with a good comprehension of their disease and treatment, augmented autonomy, a strong therapeutic alliance with their doctors, and psychological defenses for coping with stressful surgical circumstances. PMID:28689386

Development of Sic Gas Sensor Systems

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

2002-01-01

Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

Actuator operated microvalves

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2008-01-01

An actuator operated microvalve and the method of making same is disclosed and claimed. The microvalve comprises a SiC housing which includes a first lower portion and a second upper portion. The lower portion of the SiC housing includes a passageway therethrough, a microvalve seat, and a moveable SiC diaphragm. The SiC diaphragm includes a centrally located boss and radially extending corrugations which may be sinusoidally shaped. The boss of the SiC diaphragm moves and modulates in a range of positions between a closed position wherein the boss interengages said microvalve seat prohibiting communication of fluid through the passageway and a fully open position when the boss is spaced apart from the seat at its maximum permitting communication of fluid through said passageway. The actuator includes a SiC top plate affixed to the boss of the diaphragm and a first electrode and the second upper portion of the SiC housing further includes a second electrode.

Advanced Environmental Barrier Coating and SA Tyrannohex SiC Composites Integration for Improved Thermomechanical and Environmental Durability

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Halbig, Michael; Singh, Mrityunjay

2018-01-01

The development of 2700 degF capable environmental barrier coating (EBC) systems, particularly, the Rare Earth "Hafnium" Silicon bond coat systems, have significantly improved the temperature capability and environmental stability of SiC/SiC Ceramic Matrix Composite Systems. We have specifically developed the advanced 2700 degF EBC systems, integrating the EBC to the high temperature SA Tyrannohex SiC fiber composites, for comprehensive performance and durability evaluations for potential turbine engine airfoil component applications. The fundamental mechanical properties, environmental stability and thermal gradient cyclic durability performance of the EBC - SA Tyrannohex composites were investigated. The paper will particularly emphasize the high pressure combustion rig recession, cyclic thermal stress resistance and thermomechanical low cycle fatigue testing of uncoated and environmental barrier coated Tyrannohex SiC SA composites in these simulated turbine engine combustion water vapor, thermal gradients, and mechanical loading conditions. We have also investigated high heat flux and flexural fatigue degradation mechanisms, determined the upper limits of operating temperature conditions for the coated SA composite material systems in thermomechanical fatigue conditions. Recent progress has also been made by using the self-healing rare earth-silicon based EBCs, thus enhancing the SA composite hexagonal fiber columns bonding for improved thermomechanical and environmental durability in turbine engine operation environments. More advanced EBC- composite systems based on the new EBC-Fiber Interphases will also be discussed.

Assessment of intrinsic small signal parameters of submicron SiC MESFETs

NASA Astrophysics Data System (ADS)

Riaz, Mohammad; Ahmed, Muhammad Mansoor; Rafique, Umair; Ahmed, Umer Farooq

2018-01-01

In this paper, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modified due to intense transverse electric field and/or self-heating effects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for devices meant for high power applications. A set of expressions for AC small signal elements has been developed using Ids and its dependence on device biasing has been discussed. The validity of the proposed technique has been demonstrated using experimental data. Dr. Ahmed research interests are in Microelectronics, Microwave and RF Engineering and he has supervised numerous MS and PhD research projects. He authored over 100 research papers in the field of microelectronics. Dr. Ahmed is a fellow of the Institution of Engineering and Technology (IET), UK.; a Chartered Engineer (CEng) from the UK Engineering Council and holds the title of European Engineer (Eur Ing) from the European Federation of National Engineering Association (FEANI), Brussels. He is a life member of PEC (Pak); EDS & MTTS (USA).

Municipal, industrial, and irrigation water use in Washington, 1975

USGS Publications Warehouse

Dion, N.P.; Lum, W.E.

1977-01-01

An assessment of water use in 1975 in the 39 counties and 62 Water Resources Inventory Areas of Washington, indicated that 2.49 trillion gallons of water was used for municipal, industrial, and irrigation purposes. That amount represents a 10-percent increase over a similar water-use assessment in 1965, but a slight decrease from that of 1970. Total municipal water use, which includes municipally supplied industrial water, was 283 billion gallons. Industry used 442 billion gallons, of which 121 billion gallons was from municipal systems and 321 billion gallons was for self-suppled systems. Of the 604 billion gallons of water used for municipal and industrial supplies 145 billion gallons was ground water, 444 billion gallons was fresh surface water, and 14.8 billion gallons was saline surface water. A compilation of statewide industrial use as categorized by SIC (Lumber and Wood Products), SIC 28 (Chemicals and Allied Products), and SIC 20 (Food and Kindred Products)--accounted for about 65 percent of the total water used in industrial processes , In 1975, 5.79 million acre-feet of irrigation water (1,890 billion gallons) as applied to 1.52 million acres. This water was 95 percent surface water and 5 percent ground water. About 97 percent of the irrigation water was supplied in eastern Washington, to about 94 percent of the irrigated acreage in the State. (Woodard-USGS)

s-Processing from MHD-induced mixing and isotopic abundances in presolar SiC grains

NASA Astrophysics Data System (ADS)

Palmerini, S.; Trippella, O.; Busso, M.; Vescovi, D.; Petrelli, M.; Zucchini, A.; Frondini, F.

2018-01-01

In the past years the observational evidence that s-process elements from Sr to Pb are produced by stars ascending the so-called Asymptotic Giant Branch (or "AGB") could not be explained by self-consistent models, forcing researchers to extensive parameterizations. The crucial point is to understand how protons can be injected from the envelope into the He-rich layers, yielding the formation of 13C and then the activation of the 13C (α,n)16O reaction. Only recently, attempts to solve this problem started to consider quantitatively physically-based mixing mechanisms. Among them, MHD processes in the plasma were suggested to yield mass transport through magnetic buoyancy. In this framework, we compare results of nucleosynthesis models for Low Mass AGB Stars (M≲ 3M⊙), developed from the MHD scenario, with the record of isotopic abundance ratios of s-elements in presolar SiC grains, which were shown to offer precise constraints on the 13C reservoir. We find that n-captures driven by magnetically-induced mixing can indeed account for the SiC data quite well and that this is due to the fact that our 13C distribution fulfils the above constraints rather accurately. We suggest that similar tests should be now performed using different physical models for mixing. Such comparisons would indeed improve decisively our understanding of the formation of the neutron source.

Nanostructured catalyst supports

DOEpatents

Zhu, Yimin; Goldman, Jay L.; Qian, Baixin; Stefan, Ionel C.

2012-10-02

The present invention relates to SiC nanostructures, including SiC nanopowder, SiC nanowires, and composites of SiC nanopowder and nanowires, which can be used as catalyst supports in membrane electrode assemblies and in fuel cells. The present invention also relates to composite catalyst supports comprising nanopowder and one or more inorganic nanowires for a membrane electrode assembly.

Cheyenne-Laramie County Economic Development Strategy

DTIC Science & Technology

1986-06-01

Industry SIC 2879 4. Cosmetics and Toilet Preparations Industry SIC 2844 5. Electronic Connectors Industry SIC 3678 6. Mineral Wool Industry SIC 3296...five primary target-industries selected are: Soap and Other Detergents, Toilet Preparations, Agricultural Chemicals, Mineral Wool , and Electronic...Cheyenne include: -- soap and other detergents -- toilet preparation -- agricultural chemicals -- mineral wool -- electronic connectors * downtown

Thermomechanical Performance of C and SiC Multilayer, Fiber-Reinforced, CVI SiC Matrix Composites

NASA Technical Reports Server (NTRS)

Morscher, Gregory N.; Singh, Mrityunjay

2004-01-01

Hybrid fiber approaches have been attempted in the past to alloy desirable properties of different fiber-types for mechanical properties, thermal stress management, and oxidation resistance. Such an approach has potential for the CrSiC and SiCrSiC composite systems. SiC matrix composites with different stacking sequences of woven C fiber (T300) layers and woven Sic fiber (Hi-NicalonTM) layers were fabricated using the standard CVI process. Delamination occurred to some extent due to thermal mismatch for all of the composites. However, for the composites with a more uniform stacking sequence, minimal delamination occurred, enabling tensile properties to be determined at room temperature and elevated temperatures (stress-rupture in air). Composites were seal-coated with a CVI SiC layer as well as a proprietary C-B-Si (CBS) layer. Definite improvement in rupture behavior was observed in air for composites with increasing SiC fiber content and a CBS layer. The results will be compared to standard C fiber reinforced CVI SiC matrix and Hi-Nicalon reinforced CVI SiC matrix composites.

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

NASA Astrophysics Data System (ADS)

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-01

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, X.; Rungger, I.; Zapol, P.

Understanding electronic properties of substoichiometric phases of titanium oxide such as Magneli phase Ti 4O 7 is crucial in designing and modeling resistive switching devices. Here we present our study on Magneli phase Ti 4O 7 together with rutile TiO 2 and Ti 2O 3 using density functional theory methods with atomic-orbital-based self-interaction correction (ASIC). We predict a new antiferromagnetic (AF) ground state in the low temperature (LT) phase, and we explain energy difference with a competing AF state using a Heisenberg model. The predicted energy ordering of these states in the LT phase is calculated to be robust inmore » a wide range of modeled isotropic strain. We have also investigated the dependence of the electronic structures of the Ti-O phases on stoichiometry. The splitting of titanium t 2g orbitals is enhanced with increasing oxygen deficiency as Ti-O is reduced. Furthermore, the electronic properties of all these phases can be reasonably well described by applying ASIC with a "standard" value for transition metal oxides of the empirical parameter alpha of 0.5 representing the magnitude of the applied self-interaction correction.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, X.; Rungger, I.; Zapol, P.

Understanding electronic properties of substoichiometric phases of titanium oxide such as Magneli phase Ti4O7 is crucial in designing and modeling resistive switching devices. Here we present our study on Magneli phase Ti4O7 together with rutile TiO2 and Ti2O3 using density functional theory methods with atomic-orbital-based self-interaction correction (ASIC). We predict a new antiferromagnetic (AF) ground state in the low temperature (LT) phase, and we explain energy difference with a competing AF state using a Heisenberg model. The predicted energy ordering of these states in the LT phase is calculated to be robust in a wide range of modeled isotropic strain.more » We have also investigated the dependence of the electronic structures of the Ti-O phases on stoichiometry. The splitting of titanium t(2g) orbitals is enhanced with increasing oxygen deficiency as Ti-O is reduced. The electronic properties of all these phases can be reasonably well described by applying ASIC with a "standard" value for transition metal oxides of the empirical parameter alpha of 0.5 representing the magnitude of the applied self-interaction correction.« less

Anomalous length dependence of conductance of aromatic nanoribbons with amine anchoring groups

NASA Astrophysics Data System (ADS)

Bilić, Ante; Sanvito, Stefano

2012-09-01

Two sets of aromatic nanoribbons, based around a common hexagonal scaffolding, with single and dual terminal amine groups have been considered as potential molecular wires in a junction formed by gold leads. Charge transport through the two-terminal device has been modeled using density functional theory (with and without self-interaction correction) and the nonequilibrium Green's function method. The effects of wire length, multiple terminal contacts, and pathways across the junction have been investigated. For nanoribbons with the oligopyrene motif and conventional single amine terminal groups, an increase in the wire length causes an exponential drop in the conductance. In contrast, for the nanoribbons with the oligoperylene motif and dual amine anchoring groups the predicted conductance rises with the wire length over the whole range of investigated lengths. Only when the effects of self-interaction correction are taken into account, the conductance of the oligoperylene ribbons exhibits saturation for longer members of the series. The oligoperylene nanoribbons, with dual amine groups at both terminals, show the potential to fully harness the highly conjugated system of π molecular orbitals across the junction.

Effect of SiC Nanowhisker on the Microstructure and Mechanical Properties of WC-Ni Cemented Carbide Prepared by Spark Plasma Sintering

PubMed Central

Fu, Zhiqiang; Wang, Chengbiao

2014-01-01

Ultrafine tungsten carbide-nickel (WC-Ni) cemented carbides with varied fractions of silicon carbide (SiC) nanowhisker (0–3.75 wt.%) were fabricated by spark plasma sintering at 1350°C under a uniaxial pressure of 50 MPa with the assistance of vanadium carbide (VC) and tantalum carbide (TaC) as WC grain growth inhibitors. The effects of SiC nanowhisker on the microstructure and mechanical properties of the as-prepared WC-Ni cemented carbides were investigated. X-ray diffraction analysis revealed that during spark plasma sintering (SPS) Ni may react with the applied SiC nanowhisker, forming Ni2Si and graphite. Scanning electron microscopy examination indicated that, with the addition of SiC nanowhisker, the average WC grain size decreased from 400 to 350 nm. However, with the additional fractions of SiC nanowhisker, more and more Si-rich aggregates appeared. With the increase in the added fraction of SiC nanowhisker, the Vickers hardness of the samples initially increased and then decreased, reaching its maximum of about 24.9 GPa when 0.75 wt.% SiC nanowhisker was added. However, the flexural strength of the sample gradually decreased with increasing addition fraction of SiC nanowhisker. PMID:25003143

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

NASA Astrophysics Data System (ADS)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

Characteristics of Commercial SiC and Synthetic SiC as an Aggregate in Geopolymer Composites

NASA Astrophysics Data System (ADS)

Irfanita, R.; Afifah, K. N.; Asrianti; Subaer

2017-03-01

This main objective of this study is to investigate the effect silicon carbide (SiC) as an aggregate on the mechanical strength and microstructure of the geopolymer composites. The geopolymers binder were produced by using alkaline activation method of metakaolin and cured at 70oC for 2 hours. In this study commercial and synthetic SiC were used as aggregate to produce composite structure. Synthetic SiC was produced from rice husk ash and coconut shell carbon calcined at 750oC for 2 hours. The addition of SiC in geopolymers paste was varied from 0.25g, 0.50g to 0.75g to form geopolymers composites. The chemical compositions and crystallinity level of SiC and the resulting composites were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC and the composites were examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The physical and mechanical properties of the samples were determined based on apparent porosity, bulk density, and three bending flexural strength measurements. The results showed that the commercial and synthetic SiC were effectively produced geopolymers composites with different microstructure, physical and mechanical strength.

Implementation and Performance Analysis of Parallel Assignment Algorithms on a Hypercube Computer.

DTIC Science & Technology

1987-12-01

coupled pro- cessors because of the degree of interaction between processors imposed by the global memory [HwB84]. Another sub-class of MIMD... interaction between the individual processors [MuA87]. Many of the commercial MIMD computers available today are loosely coupled [HwB84]. 2.1.3 The Hypercube...Alpha-beta is a method usually employed in the solution of two-person zero-sum games like chess and checkers [Qui87]. The ha sic approach of the alpha

Seroprevalence of Streptococcal Inhibitor of Complement (SIC) suggests association of streptococcal infection with chronic kidney disease

PubMed Central

2013-01-01

Background Group A streptococcus (GAS) is an etiological agent for the immune mediated sequela post streptococcal glomerulonephritis (PSGN). In some populations PSGN is recognized as a risk factor for chronic kidney disease (CKD) and end-stage renal disease (ESRD). It was found that a significantly greater proportion of subjects with past history of PSGN than without the history exhibited seroreactions to streptococcal antigens called streptococcal inhibitor of complement (SIC) and to distantly related SIC (DRS). These antigens are expressed by major PSGN-associated GAS types. We therefore predicted that in populations such as India, which is endemic for streptococcal diseases and which has high prevalence of CKD and ESRD, greater proportions of CKD and ESRD patients exhibit seroreaction to SIC and DRS than healthy controls. Methods To test this we conducted a SIC and DRS seroprevalence study in subjects from Mumbai area. We recruited 100 CKD, 70 ESRD and 70 healthy individuals. Results Nineteen and 35.7% of CKD and ESRD subjects respectively were SIC antibody-positive, whereas only 7% of healthy cohort was seropositive to SIC. Furthermore, significantly greater proportion of the ESRD patients than the CKD patients is seropositive to SIC (p=0.02; odds ratio 2.37). No association was found between the renal diseases and DRS-antibody-positivity. Conclusions Past infection with SIC-positive GAS is a risk factor for CKD and ESRD in Mumbai population. Furthermore, SIC seropositivity is predictive of poor prognosis of CKD patients. PMID:23642030

Grain-boundary type and distribution in silicon carbide coatings and wafers

NASA Astrophysics Data System (ADS)

Cancino-Trejo, Felix; López-Honorato, Eddie; Walker, Ross C.; Ferrer, Romelia Salomon

2018-03-01

Silicon carbide is the main diffusion barrier against metallic fission products in TRISO (tristructural isotropic) coated fuel particles. The explanation of the accelerated diffusion of silver through SiC has remained a challenge for more than four decades. Although, it is now well accepted that silver diffuse through SiC by grain boundary diffusion, little is known about the characteristics of the grain boundaries in SiC and how these change depending on the type of sample. In this work five different types (coatings and wafers) of SiC produced by chemical vapor deposition were characterized by electron backscatter diffraction (EBSD). The SiC in TRISO particles had a higher concentration of high angle grain boundaries (aprox. 70%) compared to SiC wafers, which ranged between 30 and 60%. Similarly, SiC wafers had a higher concentration of low angle grain boundaries ranging between 15 and 30%, whereas TRISO particles only reached values of around 7%. The same trend remained when comparing the content of coincidence site lattice (CSL) boundaries, since SiC wafers showed a concentration of more than 30%, whilst TRISO particles had contents of around 20%. In all samples the largest fractions of CSL boundaries (3 ≤ Σ ≤ 17) were the Σ3 boundaries. We show that there are important differences between the SiC in TRISO particles and SiC wafers which could explain some of the differences observed in diffusion experiments in the literature.

QM and QM/MM Studies on Excited-State Relaxation Mechanisms of Unnatural Bases in Vacuo and Base Pairs in DNA.

PubMed

Wang, Qian; Xie, Xiao-Ying; Han, Juan; Cui, Ganglong

2017-11-22

Semisynthetic alphabet can potentially increase the genetic information stored in DNA through the formation of unusual base pairs such as d5SICS:dNaM. However, recent experiments show that near-visible-light irradiation on the d5SICS and dNaM chromophores could lead to genetic mutations and damages. Until now, their photophysical mechanisms remain elusive. Herein, we have employed MS-CASPT2//CASSCF and QM(MS-CASPT2//CASSCF)/MM methods to explore the spectroscopic properties and excited-state relaxation mechanisms of d5SICS, dNaM, and d5SICS:dNaM in DNA. We have found that (1) the S 2 state of d5SICS, the S 1 state of dNaM, and the S 2 state of d5SICS:dNaM are initially populated upon near-visible-light irradiation and (2) for d5SICS and d5SICS:dNaM, there are several parallel relaxation pathways to populate the lowest triplet state, but for dNaM, a main relaxation pathway is uncovered. Moreover, we have found that the excited-state relaxation mechanism of d5SICS:dNaM in DNA is similar to that of the isolated d5SICS chromophore. These mechanistic insights contribute to the understanding of photophysics and photochemistry of unusual base pairs and to the design of better semisynthetic genetic alphabet.

Comparative study of SiC- and Si-based photovoltaic inverters

NASA Astrophysics Data System (ADS)

Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

2017-01-01

This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

Caries experience of some countries and areas expressed by the Significant Caries Index.

PubMed

Nishi, Makiko; Stjernswärd, Jayanthi; Carlsson, Peter; Bratthall, Douglas

2002-08-01

To calculate and present the caries prevalence for some countries/states among 12-year-olds, expressed as Significant Caries Index (SiC Index) and to analyse the relationship between the mean DMFT and the SiC Index for these countries. SiC Index is the mean DMFT of the one-third of a population with the highest caries values. An Excel(R) application for calculating SiC was developed (http://www.whocollab.od.mah.se/expl/siccalculation.xls) and indices were calculated from the data collected for 14 countries and one state from the Country/Area Profile Programme (http://www.whocollab.od.mah.se/index.html). To investigate the provinces of a country that had already reached the proposed SiC Index goal of 3 DMFT among the 12-year-olds, data for 17 counties and a city from Sweden were collected and the respective mean DMFT and SiC Indices calculated. The mean DMFT varied from 1.0 to 8.5 and the SiC Index varied from 2.8 to 13.7 in the national data. Jamaica, Senegal and Sweden were the only three countries that showed SiC Indices that were less than 3 DMFT. The mean DMFT varied from 0.5 to 1.4 and the SiC Index varied from 1.4 to 3.6 in the Swedish county/city data examined. A strong linear relationship between the mean DMFT and the SiC Index was found for the populations presented in this study. The SiC Index is an indicator that reflects the situation among the most caries-exposed individuals and could be included in future population-based oral health surveys together with the mean DMFT.

Inverse modeling of surface-water discharge to achieve restoration salinity performance measures in Florida Bay, Florida

USGS Publications Warehouse

Swain, E.D.; James, D.E.

2008-01-01

The use of numerical modeling to evaluate regional water-management practices involves the simulation of various alternative water-delivery scenarios, which typically are designed intuitively rather than analytically. These scenario simulations are used to analyze how specific water-management practices affect factors such as water levels, flows, and salinities. In lieu of testing a variety of scenario simulations in a trial-and-error manner, an optimization technique may be used to more precisely and directly define good water-management alternatives. A numerical model application in the coastal regions of Florida Bay and Everglades National Park (ENP), representing the surface- and ground-water hydrology for the region, is a good example of a tool used to evaluate restoration scenarios. The Southern Inland and Coastal System (SICS) model simulates this area with a two-dimensional hydrodynamic surface-water model and a three-dimensional ground-water model, linked to represent the interaction of the two systems with salinity transport. This coastal wetland environment is of great interest in restoration efforts, and the SICS model is used to analyze the effects of alternative water-management scenarios. The SICS model is run within an inverse modeling program called UCODE. In this application, UCODE adjusts the regulated inflows to ENP while SICS is run iteratively. UCODE creates parameters that define inflow within an allowable range for the SICS model based on SICS model output statistics, with the objective of matching user-defined target salinities that meet ecosystem restoration criteria. Preliminary results obtained using two different parameterization methods illustrate the ability of the model to achieve the goals of adjusting the range and reducing the variance of salinity values in the target area. The salinity variance in the primary zone of interest was reduced from an original value of 0.509 psu2 to values 0.418 psu2 and 0.342 psu2 using different methods. Simulations with one, two, and three target areas indicate that optimization is limited near model boundaries and the target location nearest the tidal boundary may not be improved. These experiments indicate that this method can be useful for designing water-delivery schemes to achieve certain water-quality objectives. Additionally, this approach avoids much of the intuitive type of experimentation with different flow schemes that has often been used to develop restoration scenarios. ?? 2007 Elsevier B.V. All rights reserved.

Design, fabrication, and characterization of 4H-silicon carbide rectifiers for power switching applications

NASA Astrophysics Data System (ADS)

Sheridan, David Charles

Silicon Carbide has received a substantial increase in research interest over the past few years as a base material system for high-frequency and high-power semiconductor devices. Of the over 1200 polytypes, 4H-SiC is the most attractive polytype for power devices due to its wide band gap (3.2eV), excellent thermal conductivity (4.9 W/cm·K), and high critical field strength (˜2 x 106 V/cm). Important for power devices, the 10x increase in critical field strength of SiC allows high voltage blocking layers to be fabricated significantly thinner than for comparable Si devices. For power rectifiers, this reduces device on-resistance, while maintaining the same high voltage blocking capability. In this work, 4H-SiC Schottky, pn, and junction barrier Schottky (JBS) rectifiers for use in high voltage switching applications have been designed, fabricated, and extensively characterized. First, a detailed review of 4H-SiC material parameters was performed and SiC models were implemented into a standard Si drift-diffusion numerical simulator. Using these models, a SiC simulation methodology was developed in order to enable predictive SiC device design. A wide variety of rectifier and edge termination designs were investigated and optimized with respect to breakdown efficiency, area consumption, resistance to interface charge, and fabrication practicality. Simulated termination methods include: field plates, floating guard rings, and a variety of junction termination extensions (JTE). Using the device simulation results, both Schottky and JBS rectifiers were fabricated with a novel self-aligned edge termination design, and fabricated with process elements developed at the Alabama Microelectronics Science and Technology Center facility. These rectifiers exhibited near-ideal forward characteristics and had blocking voltages in excess of 2.5kV. The SiC diodes were subjected to inductive switching tests, and were found to have superior reverse recovery characteristics compared to a similar Si diode. Finally, the performance of these SiC rectifiers were tested in inductive switching circuits and in high dose gamma radiation environments. In both cases, these devices were shown to be superior to their silicon counterparts. The details of this work was presented and published in the proceedings of the 45th International Meeting of the American Vacuum Society [1], the 1999 International Conference on Silicon Carbide and Related Materials [2, 3] and the 2000 European Conference on Silicon Carbide and Related Materials [4]. The expanded conference papers were published in the international journal. Solid-State Electronics [5, 6].

Highly flexible, nonflammable and free-standing SiC nanowire paper

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

2015-03-01

Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00776c

Gate-independent energy gap in noncovalently intercalated bilayer graphene on SiC(0001)

NASA Astrophysics Data System (ADS)

Li, Yuanchang

2016-12-01

Our first-principles calculations show that an energy gap around 0.12-0.25 eV can be engineered in epitaxial graphene on SiC(0001) through the noncovalent intercalation of transition or alkali metals but originated from the distinct mechanisms. The former is attributed to the combined effects of a metal-induced perpendicular electric field and interaction, while the latter is solely attributed to the built-in electric field. A great advantage of this scheme is that the gap size is almost independent of the gate voltage up to 1 V/nm, thus reserving the electric means to tune the Fermi level of graphene when configured as field-effect transistors. Given the recent progress in experimental techniques for intercalated graphene, our findings provide a practical way to incorporate graphene in the current semiconductor industry.

4H-SiC surface energy tuning by nitrogen up-take

NASA Astrophysics Data System (ADS)

Pitthan, E.; Amarasinghe, V. P.; Xu, C.; Gustafsson, T.; Stedile, F. C.; Feldman, L. C.

2017-04-01

Surface energy modification and surface wettability of 4H silicon carbide (0001) as a function of nitrogen adsorption is reported. The surface wettability is shown to go from primarily hydrophilic to hydrophobic and the surface energy was significantly reduced with increasing nitrogen incorporation. These changes are investigated by x-ray photoelectron spectroscopy and contact angle measurements. The surface energy was quantitatively determined by the Fowkes model and interpreted primarily in terms of the variation of the surface chemistry with nitrogen coverage. Variable control of SiC surface energies with a simple and controllable atomic additive such as nitrogen that is inert to etching, stable against time, and also effective in electrical passivation, can provide new opportunities for SiC biomedical applications, where surface wetting plays an important role in the interaction with the biological interfaces.

Ion sensitivity of large-area epitaxial graphene film on SiC substrate

NASA Astrophysics Data System (ADS)

Mitsuno, Takanori; Taniguchi, Yoshiaki; Ohno, Yasuhide; Nagase, Masao

2017-11-01

We investigated the intrinsic ion sensitivity of graphene field-effect transistors (FETs) fabricated by a resist-free stencil mask lithography process from a large-scale graphene film epitaxially grown on a SiC substrate. A pH-adjusted phosphate-buffered solution was used for the measurement to eliminate the interference of other ions on the graphene FET's ion sensitivity. The charge neutrality point shifted negligibly with changing pH for the pH-adjusted phosphate-buffered solution, whereas for the mixed buffer solution, it shifted toward the negative gate voltage owing to the decrease in the concentration of phthalate ions. This phenomenon is contrary to that observed in previous reports. Overall, our results indicate that the graphene film is intrinsically insensitive to ions except for those with functional groups that interact with the graphene surface.

Application of Tight-Binding Method in Atomistic Simulation of Covalent Materials

NASA Astrophysics Data System (ADS)

Isik, Ahmet

1994-05-01

The primary goal of this thesis is to develop and apply molecular dynamics simulation methods to elemental and binary covalent materials (Si, C, SiC) based on the tight-binding (TB) model of atomic cohesion in studies of bulk and deformation properties far from equilibrium. A second purpose is to compare results with those obtained using empirical interatomic potential functions in order to elucidate the applicability of models of interatomic interactions which do not take into account explicitly electronic structure effects. We have calculated the former by using a basis set consisting of four atomic orbitals, one for the s state and three for the p states, constructing a TB Hamiltonian in the usual Slater-Koster parametrization, and diagonalizing the Hamiltonian matrix at the origin of the Brillouin zone. For the repulsive part of the energy we employ a function in the form of inverse power law with screening which is then fitted to the bulk modulus and lattice parameter of several stable polytypes, results calculated by ab initio methods in the literature. Three types of applications have been investigated to demonstrate the utility of the present TB models and their advantages relative to empirical potentials. In the case of Si we show the calculated cohesive energy agrees to within a few percent with the ab initio local-density approximation (LDA) results. In addition, for clusters up to 10 atoms we find most of the energies and equilibrium structures to be in good agreement with LDA results (the failure of the empirical potential of Stillinger and Weber (SW) is well known). In the case of C clusters our TB model gives ring and chain structures which have been found both experimentally and by LDA calculations. In the second application we have applied our TB model of Si to investigate the core structure and energetics of partial dislocations on the glide plane and reconstruction antiphase defect (APD). For the 90^circ partial we show that the TB description gives the correct asymetric reconstruction previously found by LDA. For the 30^circ partial, TB gives better bond angles in the dislocation core. For the APD we have obtained a binding energy and activation for migration which are somewhat larger than the SW values, but the conclusion remains that APD is a low-energy defect which should be quite mobile. In the third application we formulate a simple TB model for SiC where the coefficients of the two-center integrals in Si-C interactions are taken to be simple averages of Si-Si and C-C integrals. Fitting is done on two polytypes, zincblende and rocksalt structures, and a simulated annealing procedure is used. The TB results are found in good agreement with LDA and experimental results in the cohesive energy, acoustic phonon modes, and elastic constants. (Abstract shortened by UMI.).

Diagrammatic expansion for positive spectral functions beyond GW: Application to vertex corrections in the electron gas

NASA Astrophysics Data System (ADS)

Stefanucci, G.; Pavlyukh, Y.; Uimonen, A.-M.; van Leeuwen, R.

2014-09-01

We present a diagrammatic approach to construct self-energy approximations within many-body perturbation theory with positive spectral properties. The method cures the problem of negative spectral functions which arises from a straightforward inclusion of vertex diagrams beyond the GW approximation. Our approach consists of a two-step procedure: We first express the approximate many-body self-energy as a product of half-diagrams and then identify the minimal number of half-diagrams to add in order to form a perfect square. The resulting self-energy is an unconventional sum of self-energy diagrams in which the internal lines of half a diagram are time-ordered Green's functions, whereas those of the other half are anti-time-ordered Green's functions, and the lines joining the two halves are either lesser or greater Green's functions. The theory is developed using noninteracting Green's functions and subsequently extended to self-consistent Green's functions. Issues related to the conserving properties of diagrammatic approximations with positive spectral functions are also addressed. As a major application of the formalism we derive the minimal set of additional diagrams to make positive the spectral function of the GW approximation with lowest-order vertex corrections and screened interactions. The method is then applied to vertex corrections in the three-dimensional homogeneous electron gas by using a combination of analytical frequency integrations and numerical Monte Carlo momentum integrations to evaluate the diagrams.

Paralinear Oxidation of CVD SiC in Water Vapor

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Hann, Raiford E., Jr.

1997-01-01

The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

Silicon carbide as an oxidation-resistant high-temperature material. 1: Oxidation and heat corrosion behavior

NASA Technical Reports Server (NTRS)

Schlichting, J.

1981-01-01

The oxidation and corrosion behavior of SiC (in the form of a SiC powder) and hot-pressed and reaction-bound material were studied. The excellent stability of SiC in an oxidizing atmosphere is due to the development of protective SiO2 coatings. Any changes in these protective layers (e.g., due to impurities, reaction with corrosive media, high porosity of SiC, etc.) lead in most cases to increased rates of oxidation and thus restrict the field of SiC application.

Active self-correction of spinal posture in pain-free women in response to the command "straighten your back".

PubMed

Barczyk-Pawelec, Katarzyna; Sipko, Tomasz

2017-10-01

Evidence is limited regarding the regional changes in spinal posture after self-correction. The aim of the present study was to evaluate whether active self-correction improved standing and sitting spinal posture. Photogrammetry was used to assess regional spinal curvatures and vertical global spine orientation (GSO) in 42 asymptotic women aged 20-24 years. Upper thoracic spine angle and GSO increased in response to self-correction, while the thoracolumbar and lumbosacral angles decreased. Self-correction in the standing position resulted in decreased inclination of the upper thoracic and thoracolumbar spinal angles. Correction of sitting posture reduced the angle of the upper thoracic spine and GSO. The effects of active self-correction on spinal curvature and GSO were different for the standing versus sitting position; the greatest effects of active correction were noted in the thoracic spine. Balanced and lordotic postures were most prevalent in the habitual and actively self-corrected standing positions, whereas the kyphotic posture was most prevalent in the habitual sitting position, indicative that self-correction back posture in the standing position could be an important health-related daily activity, especially during prolonged sitting.

Evaluation of knowledge of Health care professionals on warfarin interactions with drug and herb medicinal in Central Saudi Arabia

PubMed Central

Al-Arifi, Mohamed N.; Wajid, Syed; Al-Manie, Nawaf K.; Al-Saker, Faisal M.; Babelgaith, Salmeen D.; Asiri, Yousif A.; Sales, Ibrahim

2016-01-01

Objectives: To evaluate health care professionals’ knowledge on warfarin interactions with drugs and herbs. Methods: A self-administered questionnaire was developed to assess health care professionals’ knowledge on warfarin interactions with drug and herb. Respondents were asked to classify 15 drugs that may effect on warfarin action as “enhance”, “inhibit “, “no effect”. The study sample involved health care professionals (physicians, pharmacists and nurses) from king Salman hospital, Saudi Arabia. Results: About 92.2% of health care professionals identified warfarin interactions with aspirin, 4.4% for warfarin and fluoxetine. Warfarin and cardiac agents (atenolol) was correctly identified by 11.1% of respondents. In warfarin –herb interactions section, the majority of respondents (66.7%) identified the interaction between green tea and warfarin. Approximately one-third of respondents (n=33) correctly classified warfarin interactions with cardamom. No significant difference was found between the health care professionals (p=0.49) for warfarin-drug interactions knowledge score and p= 0.52 for warfarin- herb interactions knowledge score. Conclusion: This study suggests that health care professionals’ knowledge of warfarin- drug-herb interactions was inadequate. Therefore, health care professionals should receive more education programs about drug-drug/herb interactions to provide appropriate patient counseling and optimal therapeutic outcomes. PMID:27022381

The usefulness of “corrected” body mass index vs. self-reported body mass index: comparing the population distributions, sensitivity, specificity, and predictive utility of three correction equations using Canadian population-based data

PubMed Central

2014-01-01

Background National data on body mass index (BMI), computed from self-reported height and weight, is readily available for many populations including the Canadian population. Because self-reported weight is found to be systematically under-reported, it has been proposed that the bias in self-reported BMI can be corrected using equations derived from data sets which include both self-reported and measured height and weight. Such correction equations have been developed and adopted. We aim to evaluate the usefulness (i.e., distributional similarity; sensitivity and specificity; and predictive utility vis-à-vis disease outcomes) of existing and new correction equations in population-based research. Methods The Canadian Community Health Surveys from 2005 and 2008 include both measured and self-reported values of height and weight, which allows for construction and evaluation of correction equations. We focused on adults age 18–65, and compared three correction equations (two correcting weight only, and one correcting BMI) against self-reported and measured BMI. We first compared population distributions of BMI. Second, we compared the sensitivity and specificity of self-reported BMI and corrected BMI against measured BMI. Third, we compared the self-reported and corrected BMI in terms of association with health outcomes using logistic regression. Results All corrections outperformed self-report when estimating the full BMI distribution; the weight-only correction outperformed the BMI-only correction for females in the 23–28 kg/m2 BMI range. In terms of sensitivity/specificity, when estimating obesity prevalence, corrected values of BMI (from any equation) were superior to self-report. In terms of modelling BMI-disease outcome associations, findings were mixed, with no correction proving consistently superior to self-report. Conclusions If researchers are interested in modelling the full population distribution of BMI, or estimating the prevalence of obesity in a population, then a correction of any kind included in this study is recommended. If the researcher is interested in using BMI as a predictor variable for modelling disease, then both self-reported and corrected BMI result in biased estimates of association. PMID:24885210

A solid state physics approach to the interaction between organic molecules and interstellar dust grains: (C60) on SiC

NASA Astrophysics Data System (ADS)

Merino, P.; Martin-Gago, J. A.; Cernicharo, J.

2011-05-01

We have modeled the interaction of large organic molecules and dust grains in the interstellar medium by means of conventional surface science techniques such as scanning probe microscopes (SPM) and X-ray photoelectron spectroscopy (XPS) among others. With these surface analysis techniques, no frequently used in astrochemistry, we can recreate model systems where the interstellar environment, in a wide range of conditions of pressure and temperature, can be studied. The accurate control of the species that can be studied enables us to simulate in our laboratory the reactions of important molecules on the surface of dust grains. These new kind of experiments provide new information about the chemical mechanisms of the interaction between dust grains and organic molecules which can be compared with the models and the observations. We use a state of the art ultra high vacuum chamber (UHV) with base pressure of 1× 10-10 mbar (2× 106 ppcm^3) where we can prepare macroscopic single-crystal samples simulating a particular dust grain surface. The clean surfaces are exposed to different molecules. The complete system molecule-substrate can be characterized down to the Armstrong scale with the scanning tunneling microscope (STM) and even single molecule orbitals can be resolved. The combination of this technique with diffraction and spectroscopic tools allows us to fully understand the adsorption configuration and chemistry of a particular molecular species on a modeled dust grain surface. Here we present, as a proof-of-concept, the study of a broadly studied molecule, fullerene, (C60) on a silicon carbide (SiC) surface. The stellar winds of carbon-rich red-giants are rich in SiC grains in the inner hot (1500K) shell. These grains can then be covered with C_2 H_2, C H_4 and other hydrocarbons that could lead to complex organic molecules, even PAHs, when they move apart from the star. In the present study we simulate the reaction of C60 molecules with the Si rich (3x3) 6H α-SiC(0001). Although 6H α-SiC is not one of the most common polytypes of SiC in the interstellar atmospheres (mostly abundant in 2H α-SiC and 3C β-SiC) we will use these first results to compare with our on-going measurements on 3C β-SiC.

Metal-like self-organization of periodic nanostructures on silicon and silicon carbide under femtosecond laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gemini, Laura; Department of Physics, Graduate School of Science, Kyoto University, 606-85802 Kyoto; FNSPE, Czech Technical University in Prague, 11519 Prague

Periodic structures were generated on Si and SiC surfaces by irradiation with femtosecond laser pulses. Self-organized structures with spatial periodicity of approximately 600 nm appear on silicon and silicon carbide in the laser fluence range just above the ablation threshold and upon irradiation with a large number of pulses. As in the case of metals, the dependence of the spatial periodicity on laser fluence can be explained by the parametric decay of laser light into surface plasma waves. The results show that the proposed model might be universally applicable to any solid state material.

Calculation of Quasi-Particle Energies of Aromatic Self-Assembled Monolayers on Au(111).

PubMed

Li, Yan; Lu, Deyu; Galli, Giulia

2009-04-14

We present many-body perturbation theory calculations of the electronic properties of phenylene diisocyanide self-assembled monolayers (SAMs) on a gold surface. Using structural models obtained within density functional theory (DFT), we have investigated how the SAM molecular energies are modified by self-energy corrections and how they are affected by the presence of the surface. We have employed a combination of GW (G = Green's function; W = screened Coulomb interaction) calculations of the SAM quasi-particle energies and a semiclassical image potential model to account for surface polarization effects. We find that it is essential to include both quasi-particle corrections and surface screening in order to provide a reasonable estimate of the energy level alignment at a SAM-metal interface. In particular, our results show that within the GW approximation the energy distance between phenylene diisocyanide SAM energy levels and the gold surface Fermi level is much larger than that found within DFT, e.g., more than double in the case of low packing densities of the SAM.

SiC Protective Coating for Photovoltaic Retinal Prostheses

PubMed Central

Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

2016-01-01

Objective To evaluate PECVD SiC as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach Retinal prostheses were implanted in rats subretinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiNx and thermal SiO2 were measured in accelerated soaking tests in saline at 87°C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results At 87°C SiNx dissolved at 18.3±0.3nm/day, while SiO2 grown at high temperature (1000°C) dissolved at 1.04±0.08A/day. SiC films demonstrated the best stability, with no quantifiable change after 112 days. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance SiC coatings demonstrating no erosion in accelerated aging test for 112 days at 87°C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4-month follow-up in vivo. The optimal thickness of SiC layers is about 560nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects. PMID:27323882

Restoring defect structures in 3C-SiC/Si (001) from spherical aberration-corrected high-resolution transmission electron microscope images by means of deconvolution processing.

PubMed

Wen, C; Wan, W; Li, F H; Tang, D

2015-04-01

The [110] cross-sectional samples of 3C-SiC/Si (001) were observed with a spherical aberration-corrected 300 kV high-resolution transmission electron microscope. Two images taken not close to the Scherzer focus condition and not representing the projected structures intuitively were utilized for performing the deconvolution. The principle and procedure of image deconvolution and atomic sort recognition are summarized. The defect structure restoration together with the recognition of Si and C atoms from the experimental images has been illustrated. The structure maps of an intrinsic stacking fault in the area of SiC, and of Lomer and 60° shuffle dislocations at the interface have been obtained at atomic level. Copyright © 2015 Elsevier Ltd. All rights reserved.

Electric dipole moment of diatomic molecules by configuration interaction. IV.

NASA Technical Reports Server (NTRS)

Green, S.

1972-01-01

The theory of basis set dependence in configuration interaction calculations is discussed, taking into account a perturbation model which is valid for small changes in the self-consistent field orbitals. It is found that basis set corrections are essentially additive through first order. It is shown that an error found in a previously published dipole moment calculation by Green (1972) for the metastable first excited state of CO was indeed due to an inadequate basis set as claimed.

On the lattice dynamics of metallic hydrogen and other Coulomb systems

NASA Technical Reports Server (NTRS)

Beck, H.; Straus, D.

1975-01-01

Numerical results for the phonon spectra of metallic hydrogen and other Coulomb systems in cubic lattices are presented. In second order in the electron-ion interaction, the behavior of the dielectric function of the interacting electron gas for arguments around the seond Fermi harmonic leads to drastic Kohn anomalies and even to imaginary phonon frequencies. Third-order band-structure corrections are also calculated. Properties of self-consistent phonons and the validity of the adiabatic approximation are discussed.

Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

PubMed

Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

2017-11-25

The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

NASA Technical Reports Server (NTRS)

Mitchell, Sharanda L.

1996-01-01

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Bulk Thermoelectric Materials Reinforced with SiC Whiskers

NASA Astrophysics Data System (ADS)

Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

2014-06-01

SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

Self-corrected elaboration and spacing effects in incidental memory.

PubMed

Toyota, Hiroshi

2006-04-01

The present study investigated the effect of self-corrected elaboration on incidental memory as a function of types of presentation (massed vs spaced) and sentence frames (image vs nonimage). The subjects were presented a target word and an incongruous sentence frame and asked to correct the target to make a common sentence in the self-corrected elaboration condition, whereas in the experimenter-corrected elaboration condition they were asked to rate the appropriateness of the congruous word presented, followed by free recall test. The superiority of the self-corrected elaboration to the experimenter-corrected elaboration was observed only in some situations of combinations by the types of presentation and sentence frames. These results were discussed in terms of the effectiveness of the self-corrected elaboration.

Packaging Technologies for 500C SiC Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2013-01-01

Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

NASA Astrophysics Data System (ADS)

Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

2008-02-01

We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

Super-Lensing and Sub-Wavelength Antennas in Mid-IR Using Silicon Carbide

NASA Astrophysics Data System (ADS)

Shvets, Gennady; Korobkin, Dmitriy; Urzhumov, Yaroslav A.; Zorman, Christian

2006-03-01

Extraordinary properties of SiC in mid-infrared (negative dielectric permittivity and small losses) make it an ideal building block for making negative index meta-materials in that important part of the electromagnetic spectrum. We report on a series of experiments demonstrating that thin films of SiC can be used as a ``perfect'' near-field lens. We have theoretically designed and experimentally implemented a super-lens ion mid-IR using SiC. We also report excitation of electrostatic resonances of two structures based on a sub-micron film of crystalline silicon carbide: (a) nano-holes drilled in the free-standing SiC membrane, and (b) metallic nano-posts evaporated on the SiC membrane. Applications of nano-hole resonances to excitation of magnetic moments in nano-structured SiC and development of negative index materials will be discussed, as will be the prospects of using nano-structured SiC films for laser processing of materials on a nanoscale.

Molecular dynamics simulation of salt rejection through silicon carbide nanotubes as a nanostructure membrane.

PubMed

Khataee, Alireza; Bayat, Golchehreh; Azamat, Jafar

2017-01-01

Salt rejection phenomenon was investigated using armchair silicon carbide (SiC) nanotubes under applied electric fields. The systems included the (7,7) and (8,8) SiC nanotubes surrounded by silicon nitride membrane immersed in a 0.4mol/L aqueous solution of sodium chloride. Results of molecular dynamics (MD) simulations for selective separation of Na + and Cl - ions showed that the (7,7) SiC nanotube is suitable for separation of cations and the (8,8) SiC nanotube can be used for separating anions. The water desalination by SiC nanotubes was demonstrated by potential of mean force for Na + and Cl - ions in each SiC nanotube. Furthermore, the ionic current, ion residence time, and the radial distribution functions of species were measured to evaluate the properties of the system. Based on the results of this research, the studied SiC nanotubes can be recommended as a nanostructure model for water desalination. Copyright © 2016 Elsevier Inc. All rights reserved.

The improvement of wave-absorbing ability of silicon carbide fibers by depositing boron nitride coating

NASA Astrophysics Data System (ADS)

Ye, Fang; Zhang, Litong; Yin, Xiaowei; Liu, Yongsheng; Cheng, Laifei

2013-04-01

This work investigated electromagnetic wave (EMW) absorption and mechanical properties of silicon carbide (SiC) fibers with and without boron nitride (BN) coating by chemical vapor infiltration (CVI). The dielectric property and EM shielding effectiveness of SiC fiber bundles before and after being coated by BN were measured by wave guide method. The EM reflection coefficient of SiC fiber laminates with and without BN coating was determined by model calculation and NRL-arc method, respectively. Tensile properties of SiC fiber bundles with and without BN coating were tested at room temperature. Results show that SiC fibers with BN coating had a great improvement of EMW absorbing property because the composites achieved the impedance matching. BN with the low permittivity and dielectric loss contributed to the enhancive introduction and reduced reflection of EMW. The tensile strength and Weibull modulus of SiC fiber bundles coated by BN increased owing to the decrease of defects in SiC fibers and the protection of coating during loading.

Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

1987-01-01

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in the SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

Deformation and fracture of single-crystal and sintered polycrystalline silicon carbide produced by cavitation

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Hattori, Shuji; Okada, Tsunenori; Buckley, Donald H.

1989-01-01

An investigation was conducted to examine the deformation and fracture behavior of single-crystal and sintered polycrystalline SiC surfaces exposed to cavitation. Cavitation erosion experiments were conducted in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (1 mm) to the surface of SiC. The horn frequency was 20 kHz, and the double amplitude of the vibrating disk was 50 microns. The results of the investigation indicate that the SiC (0001) surface could be deformed in a plastic manner during cavitation. Dislocation etch pits were formed when the surface was chemically etched. The number of defects, including dislocations in SiC (0001) surface, increased with increasing exposure time to cavitation. The presence of intrinsic defects such as voids in the surficial layers of the sintered polycrystalline SiC determined the zones at which fractured grains and fracture pits (pores) were generated. Single-crystal SiC had superior erosion resistance to that of sintered polycrystalline SiC.

Correctional officers' perceptions of a solution-focused training program: potential implications for working with offenders.

PubMed

Pan, Peter Jen Der; Deng, Liang-Yu F; Chang, Shona Shih Hua; Jiang, Karen Jye-Ru

2011-09-01

The purpose of this exploratory study was to explore correctional officers' perceptions and experiences during a solution-focused training program and to initiate development of a modified pattern for correctional officers to use in jails. The study uses grounded theory procedures combined with a follow-up survey. The findings identified six emergent themes: obstacles to doing counseling work in prisons, offenders' amenability to change, correctional officers' self-image, advantages of a solution-focused approach (SFA), potential advantages of applying SFA to offenders, and the need for the consolidation of learning and transformation. Participants perceived the use of solution-focused techniques as appropriate, important, functional, and of only moderate difficulty in interacting with offenders. Finally, a modified pattern was developed for officers to use when working with offenders in jails. Suggestions and recommendations are made for correctional interventions and future studies.

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

NASA Astrophysics Data System (ADS)

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

2016-09-01

Silicon carbide (SiC) with a high-density of planar defects (hereafter, 'nano-engineered SiC') and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. It was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

Research on Antiphonic Characteristic of AlMg10-SiC Ultralight Composite Materials

NASA Astrophysics Data System (ADS)

Rusu, O.; Rusu, I.

2018-06-01

The paper presents the results on the absorption sound testing of an ultralight cellular composite material AlMg10-SiC, obtained by sputtering method. We have chosen this type of material because its microstructure generally comprises open cells (and relatively few semi-open cells), evenly distributed in the material, a structure that, at least theoretically, has a favorable behavior in relation to sound damping. The tests were performed on three types of samples, namely P11 – AlMg10 – 5%SiC, P12 – AlMg10 – 10%SiC şi P13 – AlMg10 – 15%SiC. The 15% SiC (P13) cellular material sample has the best sound-absorbing characteristics and the highest practical absorption degree.

Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

NASA Astrophysics Data System (ADS)

Bae, Choelhwyi; Lucovsky, Gerald

2004-11-01

Low-temperature remote plasma-assisted oxidation and nitridation processes for interface formation and passivation have been extended from Si and SiC to GaN. The initial oxidation kinetics and chemical composition of thin interfacial oxide were determined from analysis of on-line Auger electron spectroscopy features associated with Ga, N, and O. The plasma-assisted oxidation process is self-limiting with power-law kinetics similar to those for the plasma-assisted oxidation of Si and SiC. Oxidation using O2/He plasma forms nearly pure GaOx, and oxidation using 1% N2O in N2 forms GaOxNy with small nitrogen content, ~4-7 at. %. The interface and dielectric layer quality was investigated using fabricated GaN metal-oxide-semiconductor capacitors. The lowest density of interface states was achieved with a two-step plasma-assisted oxidation and nitridation process before SiO2 deposition.

Time-dependent density functional theory (TD-DFT) coupled with reference interaction site model self-consistent field explicitly including spatial electron density distribution (RISM-SCF-SEDD)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yokogawa, D., E-mail: d.yokogawa@chem.nagoya-u.ac.jp; Institute of Transformative Bio-Molecules

2016-09-07

Theoretical approach to design bright bio-imaging molecules is one of the most progressing ones. However, because of the system size and computational accuracy, the number of theoretical studies is limited to our knowledge. To overcome the difficulties, we developed a new method based on reference interaction site model self-consistent field explicitly including spatial electron density distribution and time-dependent density functional theory. We applied it to the calculation of indole and 5-cyanoindole at ground and excited states in gas and solution phases. The changes in the optimized geometries were clearly explained with resonance structures and the Stokes shift was correctly reproduced.

Successful treatment of diplopia with prism improves health-related quality of life.

PubMed

Hatt, Sarah R; Leske, David A; Liebermann, Laura; Holmes, Jonathan M

2014-06-01

To report change in strabismus-specific health-related quality of life (HRQOL) following treatment with prism. Retrospective cross-sectional study. Thirty-four patients with diplopia (median age 63, range 14-84 years) completed the Adult Strabismus-20 questionnaire (100-0, best to worst HRQOL) and a diplopia questionnaire in a clinical practice before prism and in prism correction. Before prism, diplopia was "sometimes" or worse for reading and/or straight-ahead distance. Prism treatment success was defined as diplopia rated "never" or "rarely" on the diplopia questionnaire for reading and straight-ahead distance. Failure was defined as worsening or no change in diplopia. For both successes and failures, mean Adult Strabismus-20 scores were compared before prism and in prism correction. Each of the 4 Adult Strabismus-20 domains (self-perception, interactions, reading function, and general function) was analyzed separately. Twenty-three of 34 (68%) were successes and 11 (32%) were failures. For successes, reading function improved from 57 ± 27 (SD) before prism to 69 ± 27 in-prism correction (difference 12 ± 20, 95% CI 3.2-20.8, P = .02) and general function improved from 66 ± 25 to 80 ± 18 (difference 14 ± 22, 95% CI 5.0-23.6, P = .003). Self-perception and interaction domains remained unchanged (P > .2). For failures there was no significant change in Adult Strabismus-20 score on any domain (P > .4). Successful correction of diplopia with prism is associated with improvement in strabismus-specific HRQOL, specifically reading function and general function. Copyright © 2014 Elsevier Inc. All rights reserved.

Corrosion pitting of SiC by molten salts

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Smialek, J. L.

1986-01-01

The corrosion of SiC by thin films of Na2CO3 and Na2SO4 at 1000 C is characterized by a severe pitting attack of the SiC substrate. A range of different Si and SiC substrates were examined to isolate the factors critical to pitting. Two types of pitting attack are identified: attack at structural discontinuities and a crater-like attack. The crater-like pits are correlated with bubble formation during oxidation of the SiC. It appears that bubbles create unprotected regions, which are susceptible to enhanced attack and, hence, pit formation.

Effects of SiC nanoparticles orally administered in a rat model: Biodistribution, toxicity and elemental composition changes in feces and organs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lozano, Omar, E-mail: omar.lozanogarcia@fundp.ac.be; Research Centre for the Physics of Matter and Radiation; Laloy, Julie

2012-10-15

Background: Silicon carbide (SiC) presents noteworthy properties as a material such as high hardness, thermal stability, and photoluminescent properties as a nanocrystal. However, there are very few studies in regard to the toxicological potential of SiC NPs. Objectives: To study the toxicity and biodistribution of silicon carbide (SiC) nanoparticles in an in vivo rat model after acute (24 h) and subacute (28 days) oral administrations. The acute doses were 0.5, 5, 50, 300 and 600 mg·kg{sup −1}, while the subacute doses were 0.5 and 50 mg·kg{sup −1}. Results: SiC biodistribution and elemental composition of feces and organs (liver, kidneys, andmore » spleen) have been studied by Particle-Induced X-ray Emission (PIXE). SiC and other elements in feces excretion increased by the end of the subacute assessment. SiC did not accumulate in organs but some elemental composition modifications were observed after the acute assessment. Histopathological sections from organs (stomach, intestines, liver, and kidneys) indicate the absence of damage at all applied doses, in both assessments. A decrease in the concentration of urea in blood was found in the 50 mg·kg{sup −1} group from the subacute assessment. No alterations in the urine parameters (sodium, potassium, osmolarity) were found. Conclusion: This is the first study that assesses the toxicity, biodistribution, and composition changes in feces and organs of SiC nanoparticles in an in vivo rat model. SiC was excreted mostly in feces and low traces were retrieved in urine, indicating that SiC can cross the intestinal barrier. No sign of toxicity was however found after oral administration. -- Highlights: ► SiC nanoparticles were orally administered to rats in acute and subacute doses. ► SiC was found in low traces in urine. It is mostly excreted in feces within 5 days. ► SiC excretion rate, feces and organ elemental composition change with time. ► No morphological alteration were found on GI tract, liver, kidneys, or spleen. ► Urea increased in blood in the subacute assessment. No change in urine properties.« less

Persistent maternal anxiety affects the interaction between mothers and their very low birthweight children at 24 months.

PubMed

Zelkowitz, Phyllis; Papageorgiou, Apostolos; Bardin, Claudette; Wang, Tongtong

2009-01-01

Parental distress following the birth of a premature infant diminishes the parent's ability to be sensitive to the infant's cues, and this may affect infant developmental outcomes. The present study examined the effects of maternal anxiety during infant hospitalization in the Neonatal Intensive Care Unit (NICU) on the interactive behavior of mothers with their very low birthweight (VLBW) children in toddlerhood. A sample of 56 mothers and their VLBW infants were recruited in the NICU. During the infant's NICU stay, mothers completed a self-report measure of trait anxiety. These mothers and their infants were followed when the infants were 24 months corrected age, when mothers and their children were videotaped during free play at home. These videotapes were then coded using the Emotional Availability Scales. Maternal anxiety was not found to be related to severity of neonatal illness. Maternal anxiety in the NICU was associated with less sensitivity and less structure in interaction with their toddlers at 24 months corrected age, even controlling for maternal education and child birthweight. Children of mothers with higher anxiety scores in the NICU were less likely to involve their mothers in their play at 24 months corrected age. Maternal anxiety in the NICU predicted adverse interactive behaviors when the children were 24 months corrected age. Early identification of anxious mothers in the NICU is needed in order to initiate preventive intervention to support the mother-infant relationship.

Microwat : a new Earth Explorer mission proposal to measure the Sea surface Temperature and the Sea Ice Concentration

NASA Astrophysics Data System (ADS)

Prigent, Catherine; Aires, Filipe; Heygster, Georg

2017-04-01

Ocean surface characterization from satellites is required to understand, monitor and predict the general circulation of the ocean and atmosphere. With more than 70% global cloud coverage at any time, visible and infrared satellite observations only provide limited information. The polar regions are particularly vulnerable to the climate changes and are home to complex mesoscale mechanisms that are still poorly understood. They are also under very persis- tent cloudiness. Passive microwave observations can provide surface information such as Sea Surface Temperature (SST) and Sea Ice Concentration (SIC) regardless of the cloud cover, but up to now they were limited in spatial resolution. Here, we propose a passive microwave conically scanning imager, MICROWAT, in a polar orbit, for the retrieval of the SST and SIC, with a spatial resolution of 15km. It observes at 6 and 10GHz, with low-noise dual polarization receivers, and a foldable mesh antenna of 5m-diameter. Furthermore, MICROWAT will fly in tandem with MetOp-SG B to benefit from the synergy with scatterometers (SCA) and microwave imagers (MWI). MICROWAT will provide global SST estimates, twice daily, regardless of cloud cover, with an accuracy of 0.3K and a spatial resolution of 15km. The SIC will be derived with an accuracy of 3%. With its unprecedented "all weather" accurate SST and SIC at 15km, MICROWAT will provide the atmospheric and oceanic forecasting sys- tems with products compatible with their increasing spatial resolution and complexity, with impact for societal applications. It will also answer fundamental science questions related to the ocean, the atmosphere and their interactions. * Prigent, Aires, Bernardo, Orlhac, Goutoule, Roquet, & Donlon, Analysis of the potential and limitations of microwave radiometry for the retrieval of sea surface temperature: Definition

Teaching Early Readers to Self-Monitor and Self-Correct

ERIC Educational Resources Information Center

Pratt, Sharon M.; Urbanowski, Melena

2016-01-01

Proficient readers self-monitor and self-correct to derive meaning from text. This article reviews research on how students learn to self-monitor and self-correct and describes a Reciprocal Teaching (RT) instructional routine that was successfully used with early readers to build their metacognitive processes. The RT routine included teacher…

Coordinated EDX and micro-Raman analysis of presolar silicon carbide: A novel, nondestructive method to identify rare subgroup SiC

NASA Astrophysics Data System (ADS)

Liu, Nan; Steele, Andrew; Nittler, Larry R.; Stroud, Rhonda M.; De Gregorio, Bradley T.; Alexander, Conel M. O'D.; Wang, Jianhua

2017-12-01

We report the development of a novel method to nondestructively identify presolar silicon carbide (SiC) grains with high initial 26Al/27Al ratios (>0.01) and extreme 13C-enrichments (12C/13C ≤ 10) by backscattered electron-energy dispersive X-ray (EDX) and micro-Raman analyses. Our survey of a large number of presolar SiC demonstrates that (1) 80% of core-collapse supernova and putative nova SiC can be identified by quantitative EDX and Raman analyses with >70% confidence; (2) 90% of presolar SiC are predominantly 3C-SiC, as indicated by their Raman transverse optical (TO) peak position and width; (3) presolar 3C-SiC with 12C/13C ≤ 10 show lower Raman TO phonon frequencies compared to mainstream 3C-SiC. The downward shifted phonon frequencies of the 13C-enriched SiC with concomitant peak broadening are a natural consequence of isotope substitution. 13C-enriched SiC can therefore be identified by micro-Raman analysis; (4) larger shifts in the Raman TO peak position and width indicate deviations from the ideal 3C structure, including rare polytypes. Coordinated transmission electron microscopy analysis of one X and one mainstream SiC grain found them to be of 6H and 15R polytypes, respectively; (5) our correlated Raman and NanoSIMS study of mainstream SiC shows that high nitrogen content is a dominant factor in causing mainstream SiC Raman peak broadening without significant peak shifts; and (6) we found that the SiC condensation conditions in different stellar sites are astonishingly similar, except for X grains, which often condensed more rapidly and at higher atmospheric densities and temperatures, resulting in a higher fraction of grains with much downward shifted and broadened Raman TO peaks.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodríguez-González, R.; Martínez-Orozco, J. C.; Madrigal-Melchor, J.

In this work we use the standard T-matrix method to study the tunneling of Dirac electrons through graphene multilayers. A graphene sheet is deposited on top of slabs of Silicon-Oxide (SiO{sub 2}) and Silicon-Carbide (SiC) substrates, in which we applied the Cantor’s series. We calculate the transmittance as a function of energy for different incident angles and different generations of the Cantor’s series. Comparing the transmittance, we found three types of self-similarity: (a) local - into generations, (b) between incident angles and (c) between generations. We also compute the angular distribution of the transmittance for fixed energies finding a self-similarmore » pattern between generations. To our knowledge is the first time that four different self-similar patterns are presented in Cantor-based multilayers.« less

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

NASA Astrophysics Data System (ADS)

Khorsandi, Behrooz

There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

DOE PAGES

Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; ...

2016-04-06

As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of 134Cs and 137Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compactmore » containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. In addition, all three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking.« less

New constructions of approximately SIC-POVMs via difference sets

NASA Astrophysics Data System (ADS)

Luo, Gaojun; Cao, Xiwang

2018-04-01

In quantum information theory, symmetric informationally complete positive operator-valued measures (SIC-POVMs) are related to quantum state tomography (Caves et al., 2004), quantum cryptography (Fuchs and Sasaki, 2003) [1], and foundational studies (Fuchs, 2002) [2]. However, constructing SIC-POVMs is notoriously hard. Although some SIC-POVMs have been constructed numerically, there does not exist an infinite class of them. In this paper, we propose two constructions of approximately SIC-POVMs, where a small deviation from uniformity of the inner products is allowed. We employ difference sets to present the first construction and the dimension of the approximately SIC-POVMs is q + 1, where q is a prime power. Notably, the dimension of this framework is new. The second construction is based on partial geometric difference sets and works whenever the dimension of the framework is a prime power.

[Phacoemulsification versus manual small incision cataract surgery: Anatomic and functional results].

PubMed

Ammous, I; Bouayed, E; Mabrouk, S; Boukari, M; Erraies, K; Zhioua, R

2017-06-01

Prospective randomised study to compare the impact of phacoemusification (PHACO) and small incision cataract surgery (SICS) on endothelial structure (cell density and morphology) and refractive results (visual acuity, induced astigmatism). Prospective study of 57 patients (63 eyes) over 20 months (May 2012-January 2014) undergoing surgery by 2 experienced surgeons. We included patients with senile or presenile cataracts, LOCS III class 2, 3 and 4. Patients were randomized into 2 groups based on their birth month (group 1: PHACO [33]; group 2: SICS [30]). All pre- intra- and postoperative data were collected prospectively. The minimum follow-up was 6 months. We used the SPSS 18.0 for statistical analysis. Statistical tests used included the test-t Student, the Anova test, the Mann-Witney non-parametric test and the Khi 2 test. A threshold of significance was set at 0.05. The mean preoperative endothelial cell density was 2447.5±225 c/mm 2 with no significant difference between the two groups (P=0.207). The mean percentage of hexagonality was 55.5±8.2% in groups 1 and 2. The most significant cell loss was during the first immediate postoperative period for both groups. At Day 15 postoperative, the decrease in cell loss was significant (P<0.001) with a mean loss of 312.9±208.9 c/mm 2 (P<10 -2 ). Postoperatively, the mean best-corrected visual acuity was 0.057 log MAR for all of our patients (P=0.170); no patient had an acuity ≤1/10. The mean astigmatism at the conclusion of follow-up was 1.08±0.42 D in group 1 and 1.51±0.55 D in group 2, with a significant difference (P=0.001). Both SICS and PHACO give excellent results, both anatomical and refractive. However, SICS appears to be more advantageous than PHACO in terms of speed, cost, and independence from technology, and appears to be better suited to dense cataracts and mass surgery. Copyright © 2017 Elsevier Masson SAS. All rights reserved.

Insight into organic reactions from the direct random phase approximation and its corrections

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruzsinszky, Adrienn; Zhang, Igor Ying; Scheffler, Matthias

2015-10-14

The performance of the random phase approximation (RPA) and beyond-RPA approximations for the treatment of electron correlation is benchmarked on three different molecular test sets. The test sets are chosen to represent three typical sources of error which can contribute to the failure of most density functional approximations in chemical reactions. The first test set (atomization and n-homodesmotic reactions) offers a gradually increasing balance of error from the chemical environment. The second test set (Diels-Alder reaction cycloaddition = DARC) reflects more the effect of weak dispersion interactions in chemical reactions. Finally, the third test set (self-interaction error 11 = SIE11)more » represents reactions which are exposed to noticeable self-interaction errors. This work seeks to answer whether any one of the many-body approximations considered here successfully addresses all these challenges.« less

Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C- and Si- faces of SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aydogan, Pinar; Suzer, Sefik, E-mail: suzer@fen.bilkent.edu.tr; Arslan, Engin

2015-09-21

We report on an X-ray photoelectron spectroscopy (XPS) study of two graphene based devices that were analyzed by imposing a significant current under +3 V bias. The devices were fabricated as graphene layers(s) on hexagonal SiC substrates, either on the C- or Si-terminated faces. Position dependent potential distributions (IR-drop), as measured by variations in the binding energy of a C1s peak are observed to be sporadic for the C-face graphene sample, but very smooth for the Si-face one, although the latter is less conductive. We attribute these sporadic variations in the C-face device to the incomplete electrical decoupling between the graphenemore » layer(s) with the underlying buffer and/or substrate layers. Variations in the Si2p and O1s peaks of the underlayer(s) shed further light into the electrical interaction between graphene and other layers. Since the potential variations are amplified only under applied bias (voltage-contrast), our methodology gives unique, chemically specific electrical information that is difficult to obtain by other techniques.« less

Self-Consistent Monte Carlo Study of the Coulomb Interaction under Nano-Scale Device Structures

NASA Astrophysics Data System (ADS)

Sano, Nobuyuki

2011-03-01

It has been pointed that the Coulomb interaction between the electrons is expected to be of crucial importance to predict reliable device characteristics. In particular, the device performance is greatly degraded due to the plasmon excitation represented by dynamical potential fluctuations in high-doped source and drain regions by the channel electrons. We employ the self-consistent 3D Monte Carlo (MC) simulations, which could reproduce both the correct mobility under various electron concentrations and the collective plasma waves, to study the physical impact of dynamical potential fluctuations on device performance under the Double-gate MOSFETs. The average force experienced by an electron due to the Coulomb interaction inside the device is evaluated by performing the self-consistent MC simulations and the fixed-potential MC simulations without the Coulomb interaction. Also, the band-tailing associated with the local potential fluctuations in high-doped source region is quantitatively evaluated and it is found that the band-tailing becomes strongly dependent of position in real space even inside the uniform source region. This work was partially supported by Grants-in-Aid for Scientific Research B (No. 2160160) from the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Edge on Impact Simulations and Experiments

DTIC Science & Technology

2013-09-01

silicon carbide ( SiC ) and aluminum oxynitride (AlON) ceramics are predicted using the Kayenta macroscopic constitutive model. Aspects regarding...damage propagation. 2.1. Silicon Carbide SiC is an opaque ceramic explored by the armor community. It is perhaps the most extensively characterized...the Weibull modulus for SiC . 4.1. Silicon Carbide Figures 3 and 4 compare experimental images with model predictions of EOI of SiC targets at respective

SiC nanoparticles as potential carriers for biologically active substances

NASA Astrophysics Data System (ADS)

Guevara-Lora, Ibeth; Czosnek, Cezary; Smycz, Aleksandra; Janik, Jerzy F.; Kozik, Andrzej

2009-01-01

Silicon carbide SiC thanks to its many advantageous properties has found numerous applications in diverse areas of technology. In this regard, its nanosized forms often with novel properties have been the subject of intense research in recent years. The aim of this study was to investigate the binding of biologically active substances onto SiC nanopowders as a new approach to biomolecule immobilization in terms of their prospective applications in medicine or for biochemical detection. The SiC nanoparticles were prepared by a two-stage aerosol-assisted synthesis from neat hexamethyldisiloxane. The binding of several proteins (bovine serum albumin, high molecular weight kininogen, immunoglobulin G) on SiC particle surfaces was demonstrated at the levels of 1-2 nanograms per mg of SiC. These values were found to significantly increase after suitable chemical modifications of nanoparticle surfaces (by carbodiimide or 3-aminopropyltrietoxysilane treatment). The study of SiC biocompatibility showed a lack of cytotoxicity against macrophages-like cells below the concentration of 1 mg nanoparticles per mL. In summary, we demonstrated the successful immobilization of the selected substances on the SiC nanoparticles. These results including the cytotoxicity study make nano-SiC highly attractive for potential applications in medicine, biotechnology or molecular detection.

X-ray micro computed tomography characterization of cellular SiC foams for their applications in chemical engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ou, Xiaoxia

Open-cell SiC foams clearly are promising materials for continuous-flow chemical applications such as heterogeneous catalysis and distillation. X-ray micro computed tomography characterization of cellular β-SiC foams at a spatial voxel size of 13.6{sup 3} μm{sup 3} and the interpretation of morphological properties of SiC open-cell foams with implications to their transport properties are presented. Static liquid hold-up in SiC foams was investigated through in-situ draining experiments for the first time using the μ-CT technique providing thorough 3D information about the amount and distribution of liquid hold-up inside the foam. This will enable better modeling and design of structured reactors basedmore » on SiC foams in the future. In order to see more practical uses, μ-CT data of cellular foams must be exploited to optimize the design of the morphology of foams for a specific application. - Highlights: •Characterization of SiC foams using novel X-ray micro computed tomography. •Interpretation of structural properties of SiC foams regarding to their transport properties. •Static liquid hold-up analysis of SiC foams through in-situ draining experiments.« less

Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

PubMed Central

Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

2016-01-01

Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

Oxidation of ZrB2-and HfB2-Based Ultra-High Temperature Ceramics: Effects of Ta Additions

NASA Technical Reports Server (NTRS)

Opila, Elizabeth; Levine, Stanley; Lorinez, Jonathan

2003-01-01

Several compositions of ZrB2- and HfB2-based Ultra-High Temperature Ceramics (UHTC) were oxidized in stagnant air at 1627 C in ten minute cycles for times up to 100 minutes. These compositions include: ZrB2 - 20v% SiC, HfB2 - 20v% SiC, ZrB2 - 20v% SiC - 20v% TaSi2, ZrB2 - 33v% SiC, HfB2 - 20v% SiC - 20v% TaSi2, and ZrB2 - 20v% SiC - 20v% TaC. The weight change due to oxidation was recorded. The ZrB2 - 20v% SiC - 20v% TaSi2 composition was also oxidized in stagnant air at 1927 C and in an arc jet atmosphere. Samples were analyzed after oxidation by x-ray diffraction, field emission scanning electron microscopy, and energy dispersive spectroscopy to determine the reaction products and to observe the microstructure. The ZrB2 - 20v% SiC - 20v% TaSi2 showed the lowest oxidation rate at 1627 C, but performed poorly under the more extreme tests due to liquid phase formation. Effects of Ta-additions on the oxidation of the diboride-based UHTC are discussed.

Fabrication of large aperture SiC brazing mirror

NASA Astrophysics Data System (ADS)

Li, Ang; Wang, Peipei; Dong, Huiwen; Wang, Peng

2016-10-01

The SiC brazing mirror is the mirror whose blank is made by assembling together smaller SiC pieces with brazing technique. Using such kinds of joining techniques, people can manufacture large and complex SiC assemblies. The key technologies of fabricating and testing SiC brazing flat mirror especially for large aperture were studied. The SiC brazing flat mirror was ground by smart ultrasonic-milling machine, and then it was lapped by the lapping smart robot and measured by Coordinate Measuring Machine (CMM). After the PV of the surface below 4um, we did classic coarse polishing to the surface and studied the shape of the polishing tool which directly effects removal amount distribution. Finally, it was figured by the polishing smart robot and measured by Fizeau interferometer. We also studied the influence of machining path and removal functions of smart robots on the manufacturing results and discussed the use of abrasive in this process. At last, an example for fabricating and measuring a similar SiC brazing flat mirror with the aperture of 600 mm made by Shanghai Institute of Ceramics was given. The mirror blank consists of 6 SiC sectors and the surface was finally processed to a result of the Peak-to-Valley (PV) 150nm and Root Mean Square (RMS) 12nm.

Some new results for the one-loop mass correction to the compactified λϕ4 theory

NASA Astrophysics Data System (ADS)

Fucci, Guglielmo; Kirsten, Klaus

2018-03-01

In this work, we consider the one-loop effective action of a self-interacting λϕ4 field propagating in a D dimensional Euclidean space endowed with d ≤ D compact dimensions. The main purpose of this paper is to compute the corrections to the mass of the field due to the presence of the compactified dimensions. Although the results of the one-loop correction to the mass of a λϕ4 field are very well known for compactified toroidal spaces, where the field obeys periodic boundary conditions, similar results do not appear to be readily available for cases in which the scalar field is subject to Dirichlet and Neumann boundary conditions. We apply the results of the one-loop mass correction to the study of the critical temperature in Ginzburg-Landau models.

Interaction Between Graphene-Coated SiC Single Crystal and Liquid Copper

NASA Astrophysics Data System (ADS)

Homa, M.; Sobczak, N.; Sobczak, J. J.; Kudyba, A.; Bruzda, G.; Nowak, R.; Pietrzak, K.; Chmielewski, M.; Strupiński, W.

2018-04-01

The wettability of graphene-coated SiC single crystal (CGn/SiCsc) by liquid Cu (99.99%) was investigated by a sessile drop method in vacuum conditions at temperature of 1100 °C. The graphene layer was produced via a chemical vapor deposition routine using 4H-SiC single crystal cut out from 6″ wafer. A dispensed drop technique combined with a non-contact heating of a couple of materials was applied. The Cu drop was squeezed from a graphite capillary and deposited on the substrate directly in a vacuum chamber. The first Cu drop did not wet the CGn/SiCsc substrate and showed a lack of adhesion to the substrate: the falling Cu drop only touched the substrate forming a contact angle of θ 0 = 121° and then immediately rolled like a ball along the substrate surface. After settling near the edge of the substrate in about 0.15 s, the Cu drop formed an asymmetric shape with the right and left contact angles of different values (θ R = 86° and θ L = 70°, respectively), while in the next 30 min, θ R and θ L achieved the same final value of 52°. The second Cu drop was put down on the displacement path of the first drop, and immediately after the deposition, it also did not wet the substrate (θ = 123°). This drop kept symmetry and the primary position, but its wetting behavior was unusual: both θ R and θ L decreased in 17 min to the value of 23° and next, they increased to a final value of 65°. Visual observations revealed a presence of 2.5-mm-thick interfacial phase layer reactively formed under the second drop. Scanning electron microscopy (SEM) investigations revealed the presence of carbon-enriched precipitates on the top surface of the first Cu drop. These precipitates were identified by the Raman spectroscopy as double-layer graphene. The Raman spectrum taken from the substrate far from the drop revealed the presence of graphene, while that obtained from the first drop displacement path exhibited a decreased intensity of 2D peak. The results of SEM investigations and Raman spectroscopy studies suggest that the presence of graphene layer on the SiC substrate suppresses but does not completely prevent chemical interaction between liquid Cu drop and SiC. Both chemical degradation (etching) and mechanical degradation of the graphene layer during drop rolling due to high adhesion of the Cu drop to the SiC substrate are responsible for mass transfer through the 2nd drop/substrate interface that in turn results in significant changes of structure and chemistry of the drop and the interface.

Interaction Between Graphene-Coated SiC Single Crystal and Liquid Copper

NASA Astrophysics Data System (ADS)

Homa, M.; Sobczak, N.; Sobczak, J. J.; Kudyba, A.; Bruzda, G.; Nowak, R.; Pietrzak, K.; Chmielewski, M.; Strupiński, W.

2018-05-01

The wettability of graphene-coated SiC single crystal (CGn/SiCsc) by liquid Cu (99.99%) was investigated by a sessile drop method in vacuum conditions at temperature of 1100 °C. The graphene layer was produced via a chemical vapor deposition routine using 4H-SiC single crystal cut out from 6″ wafer. A dispensed drop technique combined with a non-contact heating of a couple of materials was applied. The Cu drop was squeezed from a graphite capillary and deposited on the substrate directly in a vacuum chamber. The first Cu drop did not wet the CGn/SiCsc substrate and showed a lack of adhesion to the substrate: the falling Cu drop only touched the substrate forming a contact angle of θ 0 = 121° and then immediately rolled like a ball along the substrate surface. After settling near the edge of the substrate in about 0.15 s, the Cu drop formed an asymmetric shape with the right and left contact angles of different values ( θ R = 86° and θ L = 70°, respectively), while in the next 30 min, θ R and θ L achieved the same final value of 52°. The second Cu drop was put down on the displacement path of the first drop, and immediately after the deposition, it also did not wet the substrate ( θ = 123°). This drop kept symmetry and the primary position, but its wetting behavior was unusual: both θ R and θ L decreased in 17 min to the value of 23° and next, they increased to a final value of 65°. Visual observations revealed a presence of 2.5-mm-thick interfacial phase layer reactively formed under the second drop. Scanning electron microscopy (SEM) investigations revealed the presence of carbon-enriched precipitates on the top surface of the first Cu drop. These precipitates were identified by the Raman spectroscopy as double-layer graphene. The Raman spectrum taken from the substrate far from the drop revealed the presence of graphene, while that obtained from the first drop displacement path exhibited a decreased intensity of 2D peak. The results of SEM investigations and Raman spectroscopy studies suggest that the presence of graphene layer on the SiC substrate suppresses but does not completely prevent chemical interaction between liquid Cu drop and SiC. Both chemical degradation (etching) and mechanical degradation of the graphene layer during drop rolling due to high adhesion of the Cu drop to the SiC substrate are responsible for mass transfer through the 2nd drop/substrate interface that in turn results in significant changes of structure and chemistry of the drop and the interface.

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Cui; Liu, Qingbin; Li, Jia

2014-11-03

We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700 cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer andmore » more impurities, which limit the carrier mobility of the quasi-free standing bilayer graphene samples.« less

Linear integrated optics in 3C silicon carbide.

PubMed

Martini, Francesco; Politi, Alberto

2017-05-15

The development of new photonic materials that combine diverse optical capabilities is needed to boost the integration of different quantum and classical components within the same chip. Amongst all candidates, the superior optical properties of cubic silicon carbide (3C SiC) could be merged with its crystalline point defects, enabling single photon generation, manipulation and light-matter interaction on a single device. The development of photonics devices in SiC has been limited by the presence of the silicon substrate, over which thin crystalline films are heteroepitaxially grown. By employing a novel approach in the material fabrication, we demonstrate grating couplers with coupling efficiency reaching -6 dB, sub-µm waveguides and high intrinsic quality factor (up to 24,000) ring resonators. These components are the basis for linear optical networks and essential for developing a wide range of photonics component for non-linear and quantum optics.

Dental caries risk indicators in early childhood and their association with caries polarization in adolescence: a cross-sectional study.

PubMed

Zemaitiene, Migle; Grigalauskiene, Ruta; Andruskeviciene, Vilija; Matulaitiene, Zivile Kristina; Zubiene, Jurate; Narbutaite, Julija; Slabsinskiene, Egle

2016-07-02

Based on the hypothesis that biological and social risks accumulate during life, it is important to identify possible dental caries risk indicators from the life course of early childhood and assess their association with caries polarization in adolescence. A cross-sectional design was applied to the study, and a multistage cluster sampling method used to draw a representative sample of 1063 18-year-old Lithuanian adolescents. The dental examinations were performed according to the methodology for oral status evaluation recommended by the World Health Organization. Parents of the participating adolescents completed a self-administered questionnaire about their children's life course during early childhood. The interdependence of characteristics was evaluated by chi-square (χ (2)) and Student's (t) criteria. A multivariate logistic regression model with the Significant Caries (SiC) index as an outcome was performed. The mean scores for the number of decayed, missing, and filled teeth (DMFT) and decayed teeth (DT) in the SiC positive group were higher than the corresponding values in the SiC negative group (6.14 [SD, 2.30] and 1.67 [SD, 2.02] vs 1.28 [SD, 1.11] and 0.34 [SD, 0.69], p < 0.001, respectively). Three dental caries risk indicators were identified that were independently associated with a SiC positive outcome: gender(OR = 1.32 [95 % CI: 1.01-1.73]), earlier eruption of the first primary tooth(OR = 1.43 [95 % CI: 1.03-1.97]), and past caries experience in the primary dentition (OR = 1.62 [95 % CI:1.22-2.14]). These study findings provide reliable evidence that gender, earlier eruption of the first primary tooth, and past caries experience in the primary dentition should be considered to be dental caries risk indicators and may have an adverse effect on caries polarization in adolescence.

The 11 Micron Emissions of Carbon Stars

NASA Technical Reports Server (NTRS)

Goebel, J. H.; Cheeseman, P.; Gerbault, F.

1995-01-01

A new classification scheme of the IRAS LRS carbon stars is presented. It comprises the separation of 718 probable carbon stars into 12 distinct self-similar spectral groupings. Continuum temperatures are assigned and range from 470 to 5000 K. Three distinct dust species are identifiable: SiC, alpha:C-H, and MgS. In addition to the narrow 11 + micron emission feature that is commonly attributed to SiC, a broad 11 + micron emission feature, that is correlated with the 8.5 and 7.7 micron features, is found and attributed to alpha:C-H. SiC and alpha:C-H band strengths are found to correlate with the temperature progression among the Classes. We find a spectral sequence of Classes that reflects the carbon star evolutionary sequence of spectral types, or alternatively developmental sequences of grain condensation in carbon-rich circumstellar shells. If decreasing temperature corresponds to increasing evolution, then decreasing temperature corresponds to increasing C/O resulting in increasing amounts of carbon rich dust, namely alpha:C-H. If decreasing the temperature corresponds to a grain condensation sequence, then heterogeneous, or induced nucleation scenarios are supported. SiC grains precede alpha:C-H and form the nuclei for the condensation of the latter material. At still lower temperatures, MgS appears to be quite prevalent. No 11.3 micron PAH features are identified in any of the 718 carbon stars. However, one of the coldest objects, IRAS 15048-5702, and a few others, displays an 11.9 micron emission feature characteristic of laboratory samples of coronene. That feature corresponds to the C-H out of plane deformation mode of aromatic hydrocarbon. This band indicates the presence of unsaturated, sp(sup 3), hydrocarbon bonds that may subsequently evolve into saturated bonds, sp(sup 2), if, and when, the star enters the planetary nebulae phase of stellar evolution. The effusion of hydrogen from the hydrocarbon grain results in the evolution in wavelength of this 11.9 micron emission feature to the 11.3 micron feature.

The 11 Micron Emissions of Cabon Stars

NASA Technical Reports Server (NTRS)

Goebel, J. H.; Cheeseman, P.; Gerbault, F.

1995-01-01

A new classification scheme of the IRAS LRS carbon stars is presented. It comprises the separation of 718 probable carbon stars into 12 distinct self-similar spectral groupings. Continuum temperatures are assigned and range from 470 to 5000 K. Three distinct dust species are identifiable: SiC, alpha:C-H, and MgS. In addition to the narrow 11 + micron emission feature that is commonly attributed to SiC, a broad 11 + micron emission feature, that is correlated with the 8.5 and 7.7 micron features, is found and attributed to alpha:C-H. SiC and alpha:C-H band strengths are found to correlate with the temperature progression among the Classes. We find a spectral sequence of Classes that reflects the carbon star evolutionary sequence of spectral types, or alternatively developmental sequences of grain condensation in carbon-rich circumstellar shells. If decreasing temperature corresponds to increasing evolution, then decreasing temperature corresponds to increasing CIO resulting in increasing amounts of carbon rich dust, namely alpha:C-H. If decreasing the temperature corresponds to a grain condensation sequence, then heterogeneous, or induced nucleation scenarios are supported. SiC grains precede alpha:C-H and form the nuclei for the condensation of the latter material. At still lower temperatures, MgS appears to be quite prevalent. No 11.3 micron PAH features are identified in any of the 718 carbon stars. However, one of the coldest objects, IRAS 15048-5702, and a few others, displays an 11.9 micron emission feature characteristic of laboratory samples of coronene. That feature corresponds to the C-H out of plane deformation mode of aromatic hydrocarbon. This band indicates the presence of unsaturated, sp(sup 3), hydrocarbon bonds that may subsequently evolve into saturated bonds, sp(sup 2), if, and when, the star enters the planetary nebulae phase of stellar evolution. The effusion of hydrogen from the hydrocarbon grain results in the evolution in wavelength of this 11.9 micron emission feature to the 11.3 micron feature.

Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting

PubMed Central

2011-01-01

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been understood yet which impedes significant exploitation of this ceramic material. In this paper, molecular dynamics simulation has been carried out to investigate the atomistic aspects of ductile response of SiC during nanometric cutting process. Simulation results show that cubic SiC undergoes sp3-sp2 order-disorder transition resulting in the formation of SiC-graphene-like substance with a growth rate dependent on the cutting conditions. The disorder transition of SiC causes the ductile response during its nanometric cutting operations. It was further found out that the continuous abrasive action between the diamond tool and SiC causes simultaneous sp3-sp2 order-disorder transition of diamond tool which results in graphitization of diamond and consequent tool wear. PMID:22078069

Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting.

PubMed

Goel, Saurav; Luo, Xichun; Reuben, Robert L; Rashid, Waleed Bin

2011-11-11

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been understood yet which impedes significant exploitation of this ceramic material. In this paper, molecular dynamics simulation has been carried out to investigate the atomistic aspects of ductile response of SiC during nanometric cutting process. Simulation results show that cubic SiC undergoes sp3-sp2 order-disorder transition resulting in the formation of SiC-graphene-like substance with a growth rate dependent on the cutting conditions. The disorder transition of SiC causes the ductile response during its nanometric cutting operations. It was further found out that the continuous abrasive action between the diamond tool and SiC causes simultaneous sp3-sp2 order-disorder transition of diamond tool which results in graphitization of diamond and consequent tool wear.

A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L

2014-01-01

In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at threemore » center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.« less

Laparoscopic cholecystectomy versus small incision cholecystectomy in symptomatic gallstones disease.

PubMed

Mehrvarz, Shaban; Mohebi, Hassan Ali; Kalantar Motamedi, Mohammad Hosein

2012-10-01

To compare the results and outcomes of the laparoscopic cholecystectomy (LC) with the small incision cholecystectomy (SIC). Observational study. Baqiyatallah Hospital, Tehran, Iran, from February 2008 to March 2009. Patients with symptomatic gallstones that were referred and enrolled in the study for LC or SIC. Operation, anaesthesia, analgesics and postoperative care were standardized. The patients were assessed for operation time, postoperative pain, nausea, vomiting, hospital stay, return to work time and complications in the postoperative period on day 1, 1 week, 1 month and 6 months, postoperatively. Of 144 patients, 81 underwent LC and 63 underwent SIC. Both groups were matched for age, gender, BMI, clinical findings and ASA grading. The mean duration of operation was 74 and 62 minutes in the LC and SIC groups, respectively (p = 0.0059). Duration of hospital stay and return to regular activities were shorter after LC compared to SIC. Pain scores, nausea and vomiting were the same in both groups, although the frequency of intra-operative complications were greater in LC compared to SIC. Outcome and complications of SIC were comparable with those of LC.

Comparison of surgically induced astigmatism in various incisions in manual small incision cataract surgery.

PubMed

Jauhari, Nidhi; Chopra, Deepak; Chaurasia, Rajan Kumar; Agarwal, Ashutosh

2014-01-01

To determine the surgically induced astigmatism (SIA) in Straight, Frown and Inverted V shape (Chevron) incisions in manual small incision cataract surgery (SICS). A prospective cross sectional study was done on a total of 75 patients aged 40y and above with senile cataract. The patients were randomly divided into three groups (25 each). Each group received a particular type of incision (Straight, Frown or Inverted V shape incisions). Manual SICS with intraocular lens (IOL) implantation was performed. The patients were compared 4wk post operatively for uncorrected visual acuity (UCVA), best corrected visual acuity (BCVA) and SIA. All calculations were performed using the SIA calculator version 2.1, a free software program. The study was analyzed using SPSS version 15.0 statistical analysis software. The study found that 89.5% of patients in Straight incision group, 94.2% in Frown incision group and 95.7% in Inverted V group attained BCVA post-operatively in the range of 6/6 to 6/18. Mean SIA was minimum (-0.88±0.61D×90 degrees) with Inverted V incision which was statistically significant. Inverted V (Chevron) incision gives minimal SIA.

Density Functional Calculations of Native Defects in CH 3 NH 3 PbI 3 : Effects of Spin–Orbit Coupling and Self-Interaction Error

DOE PAGES

Du, Mao-Hua

2015-04-02

We know that native point defects play an important role in carrier transport properties of CH3NH3PbI3. However, the nature of many important defects remains controversial due partly to the conflicting results reported by recent density functional theory (DFT) calculations. In this Letter, we show that self-interaction error and the neglect of spin–orbit coupling (SOC) in many previous DFT calculations resulted in incorrect positions of valence and conduction band edges, although their difference, which is the band gap, is in good agreement with the experimental value. Moreover, this problem has led to incorrect predictions of defect-level positions. Hybrid density functional calculations,more » which partially correct the self-interaction error and include the SOC, show that, among native point defects (including vacancies, interstitials, and antisites), only the iodine vacancy and its complexes induce deep electron and hole trapping levels inside of the band gap, acting as nonradiative recombination centers.« less

Experimental Studies on Al (5.7% Zn) Alloy based Hybrid MMC

NASA Astrophysics Data System (ADS)

Shivaprakash, Y. M.; Ramu, H. C.; Chiranjivee; Kumar, Roushan; Kumar, Deepak

2018-02-01

In this investigation, an attempt is made to disperse SiC (20-25 microns) and Gr (15-20 microns) in the aluminium alloy having Zn, Mg and coper as major alloying elements. The composite is further subjected to mechanical testing to determine various properties like hardness, tensile strength and wear resistance. The alloy and composite samples were tested in the un heat treated conditions. All the tests were done at the laboratory conditions as per ASTM standards. The Pin-On-Disc tribometer is used to test the two-body abrasive sliding wear behaviour in dry conditions. The wear pattern is analysed by the optical images of worn surface taken in an inverted metallurgical microscope. The calculated density is found to be reducing as the SiC and Gr quantity is increased in the base alloy. The as cast Al alloy was found to be having highest hardness. The introduction of SiC tend to increase the hardness and UTS, since Gr is also introduced simultaneously which tends to reduce the hardness and UTS of composite. The composite having highest quantity of Gr showed superior wear resistance which is mainly because the Gr particulates provide an inbuilt lubricating properties to composite. The analysis of images of worn surface showed the abrasive and delamination pattern of wear. The composites developed in the present work can be used in the automobile and aerospace parts that are light in weight and require self-lubricating properties to enhance the wear resistance.

SHS synthesis of Si-SiC composite powders using Mg and reactants from industrial waste

NASA Astrophysics Data System (ADS)

Chanadee, Tawat

2017-11-01

Si-SiC composite powders were synthesized by self-propagating high-temperature synthesis (SHS) using reactants of fly ash-based silica, sawdust-based activated carbon, and magnesium. Fly ash-based silica and sawdust-based activated carbon were prepared from coal mining fly ash and Para rubber-wood sawdust, respectively. The work investigated the effects of the synthesis atmosphere (air and Ar) on the phase and morphology of the SHS products. The SHS product was leached by a two-step acid leaching processes, to obtain the Si-SiC composite powder. The SHS product and SHS product after leaching were characterized by X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectrometry. The results indicated that the SHS product synthesized in air consisted of Si, SiC, MgO, and intermediate phases (SiO2, Mg, Mg2SiO4, Mg2Si), whereas the SHS product synthesized in Ar consisted of Si, SiC, MgO and a little Mg2SiO4. The SiC content in the leached-SHS product was higher when Ar was used as the synthesis atmosphere. As well as affecting the purity, the synthesis atmospheres also affected the average crystalline sizes of the products. The crystalline size of the product synthesized in Ar was smaller than that of the product synthesized in air. All of the results showed that fly ash and sawdust could be effective waste-material reactants for the synthesis of Si-SiC composite powders.

Construct validation of an interactive digital algorithm for ostomy care.

PubMed

Beitz, Janice M; Gerlach, Mary A; Schafer, Vickie

2014-01-01

The purpose of this study was to evaluate construct validity for a previously face and content validated Ostomy Algorithm using digital real-life clinical scenarios. A cross-sectional, mixed-methods Web-based survey design study was conducted. Two hundred ninety-seven English-speaking RNs completed the study; participants practiced in both acute care and postacute settings, with 1 expert ostomy nurse (WOC nurse) and 2 nonexpert nurses. Following written consent, respondents answered demographic questions and completed a brief algorithm tutorial. Participants were then presented with 7 ostomy-related digital scenarios consisting of real-life photos and pertinent clinical information. Respondents used the 11 assessment components of the digital algorithm to choose management options. Participant written comments about the scenarios and the research process were collected. The mean overall percentage of correct responses was 84.23%. Mean percentage of correct responses for respondents with a self-reported basic ostomy knowledge was 87.7%; for those with a self-reported intermediate ostomy knowledge was 85.88% and those who were self-reported experts in ostomy care achieved 82.77% correct response rate. Five respondents reported having no prior ostomy care knowledge at screening and achieved an overall 45.71% correct response rate. No negative comments regarding the algorithm were recorded by participants. The new standardized Ostomy Algorithm remains the only face, content, and construct validated digital clinical decision instrument currently available. Further research on application at the bedside while tracking patient outcomes is warranted.

Producing Silicon Carbide for Semiconductor Devices

NASA Technical Reports Server (NTRS)

Hsu, G. C.; Rohatgi, N. K.

1986-01-01

Processes proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.

Method of producing novel silicon carbide articles. [Patent application

DOEpatents

Milewski, J.V.

1982-06-18

A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

Method of producing silicon carbide articles

DOEpatents

Milewski, John V.

1985-01-01

A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity.

Defect-induced room temperature ferromagnetism in silicon carbide nanosheets

NASA Astrophysics Data System (ADS)

Yang, Guijin; Wu, Yanyan; Ma, Shuyi; Fu, Yujun; Gao, Daqiang; Zhang, Zhengmei; Li, Jinyun

2018-07-01

Silicon carbide (SiC) nanosheets with different sizes and thickness were synthesized by a liquid exfoliation method by varying the exfoliating time in the N, N-dimethylformamide organic solvent. During the exfoliating time increasing from 4 to 16 h, the size of the SiC nanosheets decreases gradually from 500 to 200 nm, and the thickness decreases from 9 to 3.5 nm. Results showed that all prepared SiC nanosheets show intrinsic room temperature ferromagnetism, which is greatly different to the diamagnetism nature of virgin bulk SiC. Moreover, the saturation magnetization of the SiC nanosheets increases monotonously from 0.005 to 0.018 emu/g as the size and thickness decrease. Further studies via transmission electron microscopy, superconducting quantum interference device, and electron spin resonance revealed that the origin of the ferromagnetism in SiC nanosheets might be attributed to the defects with carbon dangling bond on the surface of nanosheets.

The Influence of the Photoionizing Radiation Spectrum on Metal-Line Ratios in Ly(alpha) Forest Clouds

NASA Technical Reports Server (NTRS)

Giroux, Mark L.; Shull, J. Michael

1997-01-01

Recent measurements of Si IV/C IV ratios in the high-redshift Ly(alpha) forest (Songaila & Cowie, AJ, 112, 335 (1996a); Savaglio et at., A&A (in press) (1997)) have opened a new window on chemical enrichment and the first generations of stars. However, the derivation of accurate Si/C abundances requires reliable ionization corrections, which are strongly dependent on the spectral shape of the metagalactic ionizing background and on the 'local effects' of hot stars in nearby galaxies. Recent models have assumed power-law quasar ionizing backgrounds plus a decrement at 4 Ryd to account for He II attenuation in intervening clouds. However, we show that realistic ionizing backgrounds based on cosmological radiative transfer models produce more complex ionizing spectra between 1-5 Ryd that are critical to interpreting ions of Si and C. We also make a preliminary investigation of the effects of He II ionization front nonoverlap. Because the attenuation and reemission by intervening clouds enhance Si IV relative to C the observed high Si IV/C IV ratios do not require an unrealistic Si overproduction (Si/C greater than or equal to 3 (Si/C)(solar mass)). If the ionizing spectrum is dominated by 'local effects' from massive stars, even larger Si IV/C IV ratios are possible. However, unless stellar radiation dominates quasars by more than a factor of 10, we confirm the evidence for some Si overproduction by massive stars; values Si/C approx. 2(Si/C)(solar mass) fit the measurements better than solar abundances. Ultimately, an adequate interpretation of the ratios of C IV, Si IV, and C II may require hot, collisionally ionized gas in a multiphase medium.

A web-based micro-simulation program for self-learning BLS skills and the use of an AED. Can laypeople train themselves without a manikin?

PubMed

de Vries, Wiebe; Handley, Anthony J

2007-12-01

Various methods, including self-instruction, have been used to try to improve the acquisition of basic life support skills. This is a preliminary report of the effectiveness of a web-based self-training program for BLS and the use of an AED. Sixteen volunteers completed on-line training in their own time over a period of 8 weeks. The program included theory, scenario training and self-testing, but without practice on a manikin, or any instructor input. The volunteers were assessed, without prior warning, in a scenario setting. A recording manikin, expert assessors and video recording were used with a modified version of the Cardiff Test. All 16 volunteers performed the assessed skills in the use of an AED correctly. Most of the skills of BLS assessed were performed well. Chest compression depth and rate were performed less well (59% and 67% of participants, respectively, performed correctly). Opening the airway and lung inflation were performed poorly (38% and 13% of participants performed correctly), as was checking for safety (19% participants performed correctly). There was no significant correlation between the time a participant spent on-line and the quality of performance. Only 5 of the volunteers had ever attended a BLS course or used a resuscitation manikin before the assessment; their performance scores were not significantly better than those of the other 11 volunteers. These results suggest that it may be possible to train people in BLS and AED skills using a micro-simulation web-based interactive program but without any practice on a manikin. This seems to be particularly the case for the use of an AED, where performance achieved a uniformly high standard.

Investigation of occupational asthma: Do clinicians fail to identify relevant occupational exposures?

PubMed Central

de Olim, Carlo; Bégin, Denis; Boulet, Louis-Philippe; Cartier, André; Gérin, Michel; Lemière, Catherine

2015-01-01

BACKGROUND: Specific inhalation challenges (SIC) enable the identification of the agent responsible of occupational asthma (OA). A clinician may fail to identify a specific agent in the workplace, which may potentially lead to a misdiagnosis. The expert assessment method performed by an occupational hygienist has been used to evaluate occupational exposures in epidemiological studies. OBJECTIVE: The broad aim of the present study was to evaluate the contribution of an expert assessment performed by an occupational hygienist to the diagnosis of OA. The specific aim was to compare work-place exposures identified by an occupational hygienist and by chest physicians in subjects with positive SICs and subjects with asthma, but with a negative SIC. METHODS: SICs were performed in 120 cases: 67 were positive and 53 were negative. A clinician assessed occupational exposures to sensitizers during a routine clinical evaluation preceding the performance of the SIC. An expert assessment of occupational exposures was performed by an occupational hygienist blind to the result of the SIC. RESULTS: The occupational hygienist identified the causal agent in 96.7% of the 61 cases of positive SIC. In 33 (62.3%) cases of negative SICs, the occupational hygienist identified ≥1 sensitizing agent(s) that had not been identified by the clinician. CONCLUSION: The hygienist identified the causal agent in almost all subjects with OA. In contrast, the clinician failed to identify potential exposures to sensitizers in >60% of the negative SIC subjects, which may have resulted in some subjects being misdiagnosed as not having OA. PMID:26422401

Severe accident modeling of a PWR core with different cladding materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, S. C.; Henry, R. E.; Paik, C. Y.

2012-07-01

The MAAP v.4 software has been used to model two severe accident scenarios in nuclear power reactors with three different materials as fuel cladding. The TMI-2 severe accident was modeled with Zircaloy-2 and SiC as clad material and a SBO accident in a Zion-like, 4-loop, Westinghouse PWR was modeled with Zircaloy-2, SiC, and 304 stainless steel as clad material. TMI-2 modeling results indicate that lower peak core temperatures, less H 2 (g) produced, and a smaller mass of molten material would result if SiC was substituted for Zircaloy-2 as cladding. SBO modeling results indicate that the calculated time to RCSmore » rupture would increase by approximately 20 minutes if SiC was substituted for Zircaloy-2. Additionally, when an extended SBO accident (RCS creep rupture failure disabled) was modeled, significantly lower peak core temperatures, less H 2 (g) produced, and a smaller mass of molten material would be generated by substituting SiC for Zircaloy-2 or stainless steel cladding. Because the rate of SiC oxidation reaction with elevated temperature H{sub 2}O (g) was set to 0 for this work, these results should be considered preliminary. However, the benefits of SiC as a more accident tolerant clad material have been shown and additional investigation of SiC as an LWR core material are warranted, specifically investigations of the oxidation kinetics of SiC in H{sub 2}O (g) over the range of temperatures and pressures relevant to severe accidents in LWR 's. (authors)« less

The 11 micron Silicon Carbide Feature in Carbon Star Shells

NASA Technical Reports Server (NTRS)

Speck, A. K.; Barlow, M. J.; Skinner, C. J.

1996-01-01

Silicon carbide (SiC) is known to form in circumstellar shells around carbon stars. SiC can come in two basic types - hexagonal alpha-SiC or cubic beta-SiC. Laboratory studies have shown that both types of SiC exhibit an emission feature in the 11-11.5 micron region, the size and shape of the feature varying with type, size and shape of the SiC grains. Such a feature can be seen in the spectra of carbon stars. Silicon carbide grains have also been found in meteorites. The aim of the current work is to identity the type(s) of SiC found in circumstellar shells and how they might relate to meteoritic SiC samples. We have used the CGS3 spectrometer at the 3.8 m UKIRT to obtain 7.5-13.5 micron spectra of 31 definite or proposed carbon stars. After flux-calibration, each spectrum was fitted using a chi(exp 2)-minimisation routine equipped with the published laboratory optical constants of six different samples of small SiC particles, together with the ability to fit the underlying continuum using a range of grain emissivity laws. It was found that the majority of observed SiC emission features could only be fitted by alpha-SiC grains. The lack of beta-SiC is surprising, as this is the form most commonly found in meteorites. Included in the sample were four sources, all of which have been proposed to be carbon stars, that appear to show the SiC feature in absorption.

Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures

NASA Astrophysics Data System (ADS)

Li, Sigong; Tan, Yongqiang; Xue, Jiaxiang; Liu, Tong; Zhou, Xiaosong; Zhang, Haibin

2018-01-01

The X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE) close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.

Near-field radiative heat transfer between graphene-covered hyperbolic metamaterials

NASA Astrophysics Data System (ADS)

Hong, Xiao-Juan; Li, Jian-Wen; Wang, Tong-Biao; Zhang, De-Jian; Liu, Wen-Xing; Liao, Qing-Hua; Yu, Tian-Bao; Liu, Nian-Hua

2018-04-01

We propose the use of graphene-covered silicon carbide (SiC) nanowire arrays (NWAs) for theoretical studies of near-field radiative heat transfer. The SiC NWAs exhibit a hyperbolic characteristic at an appropriately selected filling-volume fraction. The surface plasmon supported by graphene and the hyperbolic modes supported by SiC NWAs significantly affect radiative heat transfer. The heat-transfer coefficient (HTC) between the proposed structures is larger than that between SiC NWAs. We also find that the chemical potential of graphene plays an important role in modulating the HTC. The tunability of chemical potential through gate voltage enables flexible control of heat transfer using the graphene-covered SiC NWAs.

Development of SiC Large Tapered Crystal Growth

NASA Technical Reports Server (NTRS)

Neudeck, Phil

2011-01-01

Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

Dangling bond defects in SiC: An ab initio study

NASA Astrophysics Data System (ADS)

Tuttle, Blair R.

2018-01-01

We report first-principles microscopic calculations of the properties of defects with dangling bonds in crystalline 3 C -SiC. Specifically, we focus on hydrogenated Si and C vacancies, divacancies, and multivacancies. The latter is a generic model for an isolated dangling bond within a bulk SiC matrix. Hydrogen serves to passivate electrically active defects to allow the isolation of a single dangling-bond defect. We used hybrid density-functional methods to determine energetics and electrical activity. The present results are compared to previous 3 C -SiC calculations and experiments. Finally, we identify homopolar carbon dangling-bond defects as the leakage causing defects in nanoporous SiC alloys.

The effect of self-assembled monolayers on graphene conductivity and morphology

NASA Astrophysics Data System (ADS)

Moore, T. L.; Chen, J. H.; Riddick, B.; Williams, E. D.

2009-03-01

Graphene transport properties are limited by charge defects in SiO2, and by large charge density due to strong interaction with SiC. To modify these effects we have treated 300 nm SiO2 with tricholosilanes with different termination groups including pure and fluoro and amino-terminated hydrocarbons for use as substrates for mechanical exfoliation of graphene. XPS measurements verify the presence of the expected termination groups. AFM measurements reveal modified monolayer roughness and correlation lengths; for a fluorinated carbon chain the RMS roughness is 0.266 ± 0.017 nm and the correlation length is 10.2 ± 0.7 nm compared to 0.187 ± 0.011 nm and 19.8 ± 2.5 nm for SiO2. Surface free energies of the monolayers and the SiO2 blank have been computed from static contact angle measurements and all decrease the SiO2 surface free energy; for the fluorinated carbon chain monolayer a decrease of 20 mJ/m^2 from SiO2. We will discuss the ease of exfoliation, and the morphology and conductivity of graphene on these monolayers.

Self and transport diffusivity of CO2 in the metal-organic framework MIL-47(V) explored by quasi-elastic neutron scattering experiments and molecular dynamics simulations.

PubMed

Salles, Fabrice; Jobic, Hervé; Devic, Thomas; Llewellyn, Philip L; Serre, Christian; Férey, Gérard; Maurin, Guillaume

2010-01-26

Quasi-elastic neutron scattering measurements are combined with molecular dynamics simulations to determine the self-diffusivity, corrected diffusivity, and transport diffusivity of CO(2) in the metal-organic framework MIL-47(V) (MIL = Materials Institut Lavoisier) over a wide range of loading. The force field used for describing the host/guest interactions is first validated on the thermodynamics of the MIL-47(V)/CO(2) system, prior to being transferred to the investigations of the dynamics. A decreasing profile is then deduced for D(s) and D(o) whereas D(t) presents a non monotonous evolution with a slight decrease at low loading followed by a sharp increase at higher loading. Such decrease of D(t) which has never been evidenced in any microporous systems comes from the atypical evolution of the thermodynamic correction factor that reaches values below 1 at low loading. This implies that, due to intermolecular interactions, the CO(2) molecules in MIL-47(V) do not behave like an ideal gas. Further, molecular simulations enabled us to elucidate unambiguously a 3D diffusion mechanism within the pores of MIL-47(V).

The impact resistance of SiC and other mechanical properties of SiC and Si3N4

NASA Technical Reports Server (NTRS)

Bradt, R. C.

1984-01-01

Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

Density Determination and Metallographic Surface Preparation of Electron Beam Melted Ti6Al4V

DTIC Science & Technology

2015-06-02

Electron Microscopy SiC Silicon Carbide Ti6Al4V Titanium-6Aluminum-4Vanadium WRNMMC Walter Reed National Military Medical Center Wd Dry...polishing with silicon carbide ( SiC ) papers and colloidal silica suspension to produce samples with varying surface topographies. Surfaces were...manufacturing process. For titanium alloys, the grinding media typically used is silicon carbide ( SiC ) paper. Table 1 lists grades of SiC papers that are

Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Halbig, Michael Charles; Singh, Mrityunjay

2015-01-01

Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

Effect of the Different High Volume Fraction of SiC Particles on the Junction of Bismuthate Glass-SiCp/Al Composite.

PubMed

Wang, Bin; Qu, Shengguan; Li, Xiaoqiang

2018-01-01

The in-house developed bismuthate glass and the SiC p /Al composites with different volume fractions of SiC particles (namely, 60 vol.%, 65 vol.%, 70 vol.%, and 75 vol.%) were jointed by vacuum hot-pressing process. The novel material can be used for the space mirror. The SiCp is an abbreviation for SiC particle. Firstly, the SiC p /Al composites with different vol.% of SiC particle were manufactured by using infiltration process. In order to obtain a stable bonding interface, the preoxide layers were fabricated on the surfaces of these composites for reacting with the bismuthate glass. The coefficient of thermal expansion (CTE) was carried out for characterizing the difference between the composites and bismuthate glass. The sealing quality of the composites and the bismuthate glass was quantified by using shear strength testing. The optical microstructures showed the particles were uniformly distributed in the Al matrix. The SEM image shows that a smooth oxidation layer was generated on the SiC p /Al composite. The CTE testing result indicated that the higher the vol.% of the particles in the composite, the lower the CTE value. The shear strength testing result disclosed that SiC p /Al composite with relatively low CTE value was favorable to obtain a bonding interface with high strength.

Prediction of obeche wood-induced asthma by specific skin prick testing.

PubMed

Hannu, T; Lindström, I; Palmroos, P; Kuuliala, O; Sauni, R

2013-09-01

It has previously been shown that a positive skin prick test (SPT) result is a good predictor of a positive specific inhalation challenge (SIC) in patients with occupational asthma (OA) related to wheat or rye flours. This association has not been previously studied in OA attributable to obeche wood. To describe a clinical series of patients with OA induced by obeche wood. To investigate if the SPT result can be used as a predictor for the outcome of SIC tests. OA was diagnosed according to patient history, lung function examinations and SIC tests, as well as the determination of obeche SPTs. We analysed sensitivity, specificity and positive (PPV) and negative predictive values (NPV) at different wheal sizes of the SPTs and drew receiver-operating characteristic plots using the SIC test result as the gold standard. Obeche wood SIC tests were performed on 34 symptomatic workers. Of these, 27 workers had a positive test result and were diagnosed as having OA. The minimal cut-off value with a PPV of 100% was an SPT wheal of 3.5 mm from obeche wood. This means that all workers with a wheal size of ≥ 3.5 mm from obeche wood had a positive SIC. Positive SPT results in symptomatic workers were good predictors of a positive SIC. SIC with obeche wood may be unnecessary in strongly sensitized workers.

Rapid degradation of azo dye Direct Black BN by magnetic MgFe2O4-SiC under microwave radiation

NASA Astrophysics Data System (ADS)

Gao, Jia; Yang, Shaogui; Li, Na; Meng, Lingjun; Wang, Fei; He, Huan; Sun, Cheng

2016-08-01

A novel microwave (MW) catalyst, MgFe2O4 loaded on SiC (MgFe2O4-SiC), was successfully synthesized by sol-gel method, and pure MgFe2O4 was used as reference. The MgFe2O4 and MgFe2O4-SiC catalysts were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), N2 adsorption analyzer (BET specific surface area), X-ray photoelectron spectroscopy (XPS). The electromagnetic parameters of the prepared catalysts were measured by vector network analyzer. The reflection loss (RL) based on the electromagnetic parameters calculated in Matlab showed MgFe2O4-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range, revealing the excellent MW absorption property of MgFe2O4-SiC. MW-induced degradation of Direct Black BN (DB BN) over as-synthesized MgFe2O4-SiC indicated that degradation efficiency of DB BN (20 mg L-1) in 5 min reached 96.5%, the corresponding TOC removal was 65%, and the toxicity of DB BN after degradation by MgFe2O4-SiC obviously decreased. The good stability and applicability of MgFe2O4-SiC on the degradation process were also discovered. Moreover, the ionic chromatogram during degradation of DB BN demonstrated that the C-S, C-N and azo bonds in the DB BN molecule were destroyed gradually. MW-induced rad OH and holes could be responsible for the efficient removal involved in the system. These findings make MgFe2O4-SiC become an excellent MW absorbent as well as an effective MW catalyst with rapid degradation of DB BN. Therefore, it may be promising for MgFe2O4-SiC under MW radiation to deal with various dyestuffs and other toxic organic pollutants.

Recycling silicon wire-saw slurries: separation of silicon and silicon carbide in a ramp settling tank under an applied electrical field.

PubMed

Tsai, Tzu-Hsuan; Shih, Yu-Pei; Wu, Yung-Fu

2013-05-01

The growing demand for silicon solar cells in the global market has greatly increased the amount of silicon sawing waste produced each year. Recycling kerf Si and SiC from sawing waste is an economical method to reduce this waste. This study reports the separation of Si and SiC using a ramp settling tank. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. The agreement between experimental results and predicted results shows that the particles traveled a short distance to reach the collection port in the ramp tank. Consequently, the time required for tiny particles to hit the tank bottom decreased, and the interference caused by the dispersion between particles and the fluid motion during settling decreased. In the ramp tank, the highest purities of the collected SiC and Si powders were 95.2 and 7.01 wt%, respectively. Using a ramp tank, the recycling fraction of Si-rich powders (SiC < 15 wt%) reached 22.67% (based on the whole waste). This fraction is greater than that achieved using rectangular tanks. Recycling Si and SiC abrasives from the silicon sawing waste is regarded as an economical solution to reduce the sawing waste. However, the separation of Si and SiC is difficult. This study reports the separation of Si and SiC using a ramp settling tank under an applied electrical field. As they settle in an electrical field, small Si particles with higher negative charges have a longer horizontal displacement than SiC particles in a solution of pH 7, resulting in the separation of Si and SiC. Compared with the rectangular tanks, the recycling fraction of Si-rich powders using a ramp tank is greater, and the proposed ramp settling tank is more suitable for industrial applications.

Conformal higher spin theory and twistor space actions

NASA Astrophysics Data System (ADS)

Hähnel, Philipp; McLoughlin, Tristan

2017-12-01

We consider the twistor description of conformal higher spin theories and give twistor space actions for the self-dual sector of theories with spin greater than two that produce the correct flat space-time spectrum. We identify a ghost-free subsector, analogous to the embedding of Einstein gravity with cosmological constant in Weyl gravity, which generates the unique spin-s three-point anti-MHV amplitude consistent with Poincaré invariance and helicity constraints. By including interactions between the infinite tower of higher-spin fields we give a geometric interpretation to the twistor equations of motion as the integrability condition for a holomorphic structure on an infinite jet bundle. Finally, we conjecture anti-self-dual interaction terms which give an implicit definition of a twistor action for the full conformal higher spin theory.

Lattice cluster theory of associating polymers. I. Solutions of linear telechelic polymer chains.

PubMed

Dudowicz, Jacek; Freed, Karl F

2012-02-14

The lattice cluster theory (LCT) for the thermodynamics of a wide array of polymer systems has been developed by using an analogy to Mayer's virial expansions for non-ideal gases. However, the high-temperature expansion inherent to the LCT has heretofore precluded its application to systems exhibiting strong, specific "sticky" interactions. The present paper describes a reformulation of the LCT necessary to treat systems with both weak and strong, "sticky" interactions. This initial study concerns solutions of linear telechelic chains (with stickers at the chain ends) as the self-assembling system. The main idea behind this extension of the LCT lies in the extraction of terms associated with the strong interactions from the cluster expansion. The generalized LCT for sticky systems reduces to the quasi-chemical theory of hydrogen bonding of Panyioutou and Sanchez when correlation corrections are neglected in the LCT. A diagrammatic representation is employed to facilitate the evaluation of the corrections to the zeroth-order approximation from short range correlations. © 2012 American Institute of Physics

Correctness Proof of a Self-Stabilizing Distributed Clock Synchronization Protocol for Arbitrary Digraphs

NASA Technical Reports Server (NTRS)

Malekpour, Mahyar R.

2011-01-01

This report presents a deductive proof of a self-stabilizing distributed clock synchronization protocol. It is focused on the distributed clock synchronization of an arbitrary, non-partitioned digraph ranging from fully connected to 1-connected networks of nodes while allowing for differences in the network elements. This protocol does not rely on assumptions about the initial state of the system, and no central clock or a centrally generated signal, pulse, or message is used. Nodes are anonymous, i.e., they do not have unique identities. There is no theoretical limit on the maximum number of participating nodes. The only constraint on the behavior of the node is that the interactions with other nodes are restricted to defined links and interfaces. We present a deductive proof of the correctness of the protocol as it applies to the networks with unidirectional and bidirectional links. We also confirm the claims of determinism and linear convergence.

Combining graphene with silicon carbide: synthesis and properties - a review

NASA Astrophysics Data System (ADS)

Shtepliuk, Ivan; Khranovskyy, Volodymyr; Yakimova, Rositsa

2016-11-01

Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. silicon carbide (SiC) promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly, dependent on the synthesis method and the growth modes. In this article, a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC. First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC, which is facilitated by the nature of SiC to assume graphitization. Concerning the synthesis methods, we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy, stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation. We address in detail the main aspects of the substrate effect, such as substrate face polarity, off-cut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks.

Combined effect of smear layer characteristics and hydrostatic pulpal pressure on dentine bond strength of HEMA-free and HEMA-containing adhesives.

PubMed

Mahdan, Mohd Haidil Akmal; Nakajima, Masatoshi; Foxton, Richard M; Tagami, Junji

2013-10-01

This study evaluated the combined effect of smear layer characteristics with hydrostatic pulpal pressure (PP) on bond strength and nanoleakage expression of HEMA-free and -containing self-etch adhesives. Flat dentine surfaces were obtained from extracted human molars. Smear layers were created by grinding with #180- or #600-SiC paper. Three HEMA-free adhesives (Xeno V, G Bond Plus, Beautibond Multi) and two HEMA-containing adhesives (Bond Force, Tri-S Bond) were applied to the dentine surfaces under hydrostatic PP or none. Dentine bond strengths were determined using the microtensile bond test (μTBS). Data were statistically analyzed using three- and two-way ANOVA with Tukey post hoc comparison test. Nanoleakage evaluation was carried out under a scanning electron microscope (SEM). Coarse smear layer preparation and hydrostatic PP negatively affected the μTBS of HEMA-free and -containing adhesives, but there were no significant differences. The combined experimental condition significantly reduced μTBS of the HEMA-free adhesives, while the HEMA-containing adhesives exhibited no significant differences. Two-way ANOVA indicated that for HEMA-free adhesives, there were significant interactions in μTBS between smear layer characteristics and pulpal pressure, while for HEMA-containing adhesives, there were no significant interactions between them. Nanoleakage formation within the adhesive layers of both adhesive systems distinctly increased in the combined experimental group. The combined effect of coarse smear layer preparation with hydrostatic PP significantly reduced the μTBS of HEMA-free adhesives, while in HEMA-containing adhesives, these effects were not obvious. Smear layer characteristics and hydrostatic PP would additively compromise dentine bonding of self-etch adhesives, especially HEMA-free adhesives. Copyright © 2013 Elsevier Ltd. All rights reserved.

Enhancing Navigation Skills through Audio Gaming.

PubMed

Sánchez, Jaime; Sáenz, Mauricio; Pascual-Leone, Alvaro; Merabet, Lotfi

2010-01-01

We present the design, development and initial cognitive evaluation of an Audio-based Environment Simulator (AbES). This software allows a blind user to navigate through a virtual representation of a real space for the purposes of training orientation and mobility skills. Our findings indicate that users feel satisfied and self-confident when interacting with the audio-based interface, and the embedded sounds allow them to correctly orient themselves and navigate within the virtual world. Furthermore, users are able to transfer spatial information acquired through virtual interactions into real world navigation and problem solving tasks.

Enhancing Navigation Skills through Audio Gaming

PubMed Central

Sánchez, Jaime; Sáenz, Mauricio; Pascual-Leone, Alvaro; Merabet, Lotfi

2014-01-01

We present the design, development and initial cognitive evaluation of an Audio-based Environment Simulator (AbES). This software allows a blind user to navigate through a virtual representation of a real space for the purposes of training orientation and mobility skills. Our findings indicate that users feel satisfied and self-confident when interacting with the audio-based interface, and the embedded sounds allow them to correctly orient themselves and navigate within the virtual world. Furthermore, users are able to transfer spatial information acquired through virtual interactions into real world navigation and problem solving tasks. PMID:25505796

Distribution of fission products palladium, silver, cerium and cesium in the un-corroded areas of the locally corroded SiC layer of a neutron irradiated TRISO fuel particle

DOE PAGES

Wen, Haiming; van Rooyen, Isabella J.

2017-04-14

Here, detailed electron microscopy studies were performed to investigate the distribution and composition of fission products in the SiC layer of a tristructural isotropic coated particle exhibiting localized corrosion. Previous studies on this particle indicated that pure carbon areas in the SiC layer, resulting from localized corrosion of SiC by Pd, provide pathways for Ag, Cd and Cs migration. This study reveals the presence of Ag- and/or Cd-containing precipitates in un-corroded SiC areas. Ag/Cd may exist by themselves or coexist with Pd. Ag/Cd mainly transport along SiC grain boundaries. An Ag-Pd-Cd precipitate was identified at a stacking fault inside amore » SiC grain, suggesting that intragranular transport of Ag/Cd is possible. Ce is present with Pd or Pd-U in some precipitates >50 nm. U and Ce frequently coexist with each other, whereas Ag/Cd usually does not coexist with U or Ce. No Cs was detected in any precipitates in the areas examined.« less

Validation of Suomi-NPP VIIRS sea ice concentration with very high-resolution satellite and airborne camera imagery

NASA Astrophysics Data System (ADS)

Baldwin, Daniel; Tschudi, Mark; Pacifici, Fabio; Liu, Yinghui

2017-08-01

Two independent VIIRS-based Sea Ice Concentration (SIC) products are validated against SIC as estimated from Very High Spatial Resolution Imagery for several VIIRS overpasses. The 375 m resolution VIIRS SIC from the Interface Data Processing Segment (IDPS) SIC algorithm is compared against estimates made from 2 m DigitalGlobe (DG) WorldView-2 imagery and also against estimates created from 10 cm Digital Mapping System (DMS) camera imagery. The 750 m VIIRS SIC from the Enterprise SIC algorithm is compared against DG imagery. The IDPS vs. DG comparisons reveal that, due to algorithm issues, many of the IDPS SIC retrievals were falsely assigned ice-free values when the pixel was clearly over ice. These false values increased the validation bias and RMS statistics. The IDPS vs. DMS comparisons were largely over ice-covered regions and did not demonstrate the false retrieval issue. The validation results show that products from both the IDPS and Enterprise algorithms were within or very close to the 10% accuracy (bias) specifications in both the non-melting and melting conditions, but only products from the Enterprise algorithm met the 25% specifications for the uncertainty (RMS).

The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

NASA Astrophysics Data System (ADS)

Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

2015-11-01

Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

Enhanced thermoelectric properties of nano SiC dispersed Bi2Sr2Co2Oy Ceramics

NASA Astrophysics Data System (ADS)

Hu, Qiujun; Wang, Kunlun; Zhang, Yingjiu; Li, Xinjian; Song, Hongzhang

2018-04-01

The thermoelectric properties of Bi2Sr2Co2Oy + x wt% nano SiC (x = 0.00, 0.025, 0.05, 0.1, 0.2, and 0.3) prepared by the solid-state reaction method were investigated from 300 K to 923 K. The resistivity can be reduced effectively by adding a small amount of SiC nano particles, which is attributed to the increase of the carrier concentration. At the same time, the Seebeck coefficients can be improved effectively due to the energy filtering effect that low energy carriers are strongly dispersed at the interface between the SiC nano particles and the matrix. The decrease of thermal conductivity is due to the increase of the scattering ability of the phonons by the SiC nanoparticles distributed at the boundary of the matrix. As a result, the Bi2Sr2Co2Oy + x wt% SiC composites exhibit better thermoelectric properties. The maximum ZT value 0.24 is obtained when x = 0.05 at 923 K. Compared with the sample without SiC nano particles, the ZT value is increased by about 59.7%.

Enhanced thermal conductivity of uranium dioxide-silicon carbide composite fuel pellets prepared by Spark Plasma Sintering (SPS)

NASA Astrophysics Data System (ADS)

Yeo, S.; Mckenna, E.; Baney, R.; Subhash, G.; Tulenko, J.

2013-02-01

Uranium dioxide (UO2)-10 vol% silicon carbide (SiC) composite fuel pellets were produced by oxidative sintering and Spark Plasma Sintering (SPS) at a range of temperatures from 1400 to 1600 °C. Both SiC whiskers and SiC powder particles were utilized. Oxidative sintering was employed over 4 h and the SPS sintering was employed only for 5 min at the highest hold temperature. It was noted that composite pellets sintered by SPS process revealed smaller grain size, reduced formation of chemical products, higher density, and enhanced interfacial contact compared to the pellets made by oxidative sintering. For given volume of SiC, the pellets with powder particles yielded a smaller grain size than pellets with SiC whiskers. Finally thermal conductivity measurements at 100 °C, 500 °C, and 900 °C revealed that SPS sintered UO2-SiC composites exhibited an increase of up to 62% in thermal conductivity compared to UO2 pellets, while the oxidative sintered composite pellets revealed significantly inferior thermal conductivity values. The current study points to the improved processing capabilities of SPS compared to oxidative sintering of UO2-SiC composites.

Structural changes of Ti3SiC2 induced by helium irradiation with different doses

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Su, Ranran; Shi, Liqun; O'Connor, Daryl J.; Wen, Haiming

2018-03-01

In this study, the microstructure changes of Ti3SiC2 MAX phase material induced by helium irradiation and evolution with a sequence of different helium irradiation doses of 5 × 1015, 1 × 1016, 5 × 1016 and 1 × 1017 cm-2 at room temperature (RT) were characterized with grazing incidence X-ray diffraction (GIXRD) and Raman spectra analysis. The irradiation damage process of Ti3SiC2 can be roughly divided into three stages according to the level of helium irradiation dose: (1) for a low damage dose, only crystal and damaged Ti3SiC2 exit; (2) at a higher irradiation dose, there is some damaged TiC phase additionally; (3) with a much higher irradiation dose, crystal TiC phase could be found inside the samples as well. Moreover, the 450 °C 5 × 1016 cm-2 helium irradiation on Ti3SiC2 has confirmed that Ti3SiC2 has much higher irradiation tolerance at higher temperature, which implies that Ti3SiC2 could be a potential future structural and fuel coating material working at high temperature environments.

The Experienced Utility of Expected Utility Approaches

DTIC Science & Technology

1980-04-01

extrin- 1 sic reinforcements on intrinsic motivation (Deci, 1975) reflects another such interaction, as it suggests that the value of intrinsic rewards...may be affected by the specific extrinsic reward received. This can, in principle, be handled in SEU models, by evaluating the conjunction of...this suspicion (p. 146). More pessimistically, Staw (1977) suggests that ordinary choice behavior is better modeled as " impulse buying " decisions of

Successful treatment of diplopia with prism improves health-related quality of life

PubMed Central

Hatt, Sarah R.; Leske, David A.; Liebermann, Laura; Holmes, Jonathan M.

2014-01-01

Purpose To report change in strabismus-specific health-related quality of life (HRQOL) following treatment with prism. Design Retrospective cross-sectional study Methods Thirty-four patients with diplopia (median age 63, range 14 to 84 years) completed the Adult Strabismus-20 questionnaire (100 to 0, best to worst HRQOL) and a diplopia questionnaire in a clinical practice before prism and in prism correction. Before prism, diplopia was “sometimes” or worse for reading and/or straight ahead distance. Prism treatment success was defined as diplopia rated “never” or “rarely” on the Diplopia Questionnaire for reading and straight ahead distance. Failure was defined as worsening or no change in diplopia. For both successes and failures, mean Adult Strabismus -20 scores were compared pre-prism and in prism correction. Each of the four Adult Strabismus -20 domains (Self-perception, Interactions, Reading function and General function) were analyzed separately. Results Twenty-three (68%) of 34 were successes and 11 (32%) were failures. For successes, Reading Function improved from 57 ± 27 (SD) before prism to 69 ± 27 in-prism correction (difference 12 ± 20, 95% CI 3.2 to 20.8, P=0.02) and General Function improved from 66 ± 25 to 80 ± 18 (difference 14 ± 22, 95% CI 5.0 to 23.6, P=0.003). Self-perception and Interaction domains remained unchanged (P>0.2). For failures there was no significant change in Adult Strabismus -20 score on any domain (P>0.4). Conclusions Successful correction of diplopia with prism is associated with improvement in strabismus-specific HRQOL, specifically reading function and general function. PMID:24561171

Refractory Oxide Coatings on Sic Ceramics

NASA Technical Reports Server (NTRS)

Lee, Kang N.; Jacobson, Nathan S.; Miller, Robert A.

1994-01-01

Silicon carbide with a refractory oxide coating is potentially a very attractive ceramic system. It offers the desirable mechanical and physical properties of SiC and the environmental durability of a refractory oxide. The development of a thermal shock resistant plasma-sprayed mullite coating on SiC is discussed. The durability of the mullite/SiC in oxidizing, reducing, and molten salt environments is discussed. In general, this system exhibits better behavior than uncoated SiC. Areas for further developments are discussed.

Silicon carbide whisker-zirconia reinforced mullite and alumina ceramics

DOEpatents

Becher, Paul F.; Tiegs, Terry N.

1987-01-01

The flexural strength and/or fracture toughness of SiC whisker-reinforced composites utilizing mullite or alumina as the matrix material for the composite are increased by the addition of zirconia in a monoclinic or tetragonal phase to the matrix. The zirconia addition also provides for a lower hot-pressing temperature and increases the flexural strength and/or fracture toughness of the SiC whisker-reinforced composites over SiC whisker-reinforced composites of the similar matrix materials reinforced with similar concentrations of SiC whiskers.

Multi-Kilovolt Solid-State Picosecond Switch Studies

DTIC Science & Technology

2013-06-01

waveforms for the SiC device. Figure 7 shows the nanosecond driving pulse and the delayed avalanche breakdown of the SiC device. The driving...of the sharpened pulse RS VS VOLTAGE SOURCE TEST DEVICE VOLTAGE MONITOR R1 R2 TO SCOPE Figure 6. Simplified SiC avalanche diode test setup 0 2 4...Measured waveforms showing nanosecond driving pulse and subnanosecond delayed avalanche dreakdown of SiC device 50 µm 75 µm 10 µm p+ n+n Anode Cathode

Modeling and Simulation of Ceramic Arrays to Improve Ballistic Performance

DTIC Science & Technology

2014-03-01

30cal AP M2 Projectile, 762x39 PS Projectile, SPH , Aluminum 5083, SiC, DoP Expeminets, AutoDyn Sin 16. SECURITY CLASSIFICATION OF: UU a. REPORT b...projectile and are modeled using SPH elements in AutoDyn □ Center strike model validation runs with SiC tiles are conducted based on the DOP...Smoothed-particle hydrodynamics ( SPH ) used for all parts, SPH Size = 0.2 3 SiC and SiC 2 are identical in properties and dimensions

Mechanical Testing of Ultra-High Temperature Ceramics at 1500 C in Air - Development of an Experimental Facility and Test Method

DTIC Science & Technology

2015-03-26

SiC. TEM micrograph courtesy of R. S . Hay (AFRL/RXCC). ...................33 Fig. 5. Schematic of HfB2-based UHTC test specimen...the early work performed by the U. S . Air force and NASA was the identification of hafnium diboride (HfB2) and zirconium diboride (ZrB2) as good high...sintering, reactive routes, and spark plasma sintering. ~ 14 ~ Because diborides exhibit strong covalent bonding and low self-diffusion, high

Performance evaluation of a high power DC-DC boost converter for PV applications using SiC power devices

NASA Astrophysics Data System (ADS)

Almasoudi, Fahad M.; Alatawi, Khaled S.; Matin, Mohammad

2016-09-01

The development of Wide band gap (WBG) power devices has been attracted by many commercial companies to be available in the market because of their enormous advantages over the traditional Si power devices. An example of WBG material is SiC, which offers a number of advantages over Si material. For example, SiC has the ability of blocking higher voltages, reducing switching and conduction losses and supports high switching frequency. Consequently, SiC power devices have become the affordable choice for high frequency and power application. The goal of this paper is to study the performance of 4.5 kW, 200 kHz, 600V DC-DC boost converter operating in continuous conduction mode (CCM) for PV applications. The switching behavior and turn on and turn off losses of different switching power devices such as SiC MOSFET, SiC normally ON JFET and Si MOSFET are investigated and analyzed. Moreover, a detailed comparison is provided to show the overall efficiency of the DC-DC boost converter with different switching power devices. It is found that the efficiency of SiC power switching devices are higher than the efficiency of Si-based switching devices due to low switching and conduction losses when operating at high frequencies. According to the result, the performance of SiC switching power devices dominate the conventional Si power devices in terms of low losses, high efficiency and high power density. Accordingly, SiC power switching devices are more appropriate for PV applications where a converter of smaller size with high efficiency, and cost effective is required.

Assessment of Silicon Carbide Composites for Advanced Salt-Cooled Reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katoh, Yutai; Wilson, Dane F; Forsberg, Charles W

2007-09-01

The Advanced High-Temperature Reactor (AHTR) is a new reactor concept that uses a liquid fluoride salt coolant and a solid high-temperature fuel. Several alternative fuel types are being considered for this reactor. One set of fuel options is the use of pin-type fuel assemblies with silicon carbide (SiC) cladding. This report provides (1) an initial viability assessment of using SiC as fuel cladding and other in-core components of the AHTR, (2) the current status of SiC technology, and (3) recommendations on the path forward. Based on the analysis of requirements, continuous SiC fiber-reinforced, chemically vapor-infiltrated SiC matrix (CVI SiC/SiC) compositesmore » are recommended as the primary option for further study on AHTR fuel cladding among various industrially available forms of SiC. Critical feasibility issues for the SiC-based AHTR fuel cladding are identified to be (1) corrosion of SiC in the candidate liquid salts, (2) high dose neutron radiation effects, (3) static fatigue failure of SiC/SiC, (4) long-term radiation effects including irradiation creep and radiation-enhanced static fatigue, and (5) fabrication technology of hermetic wall and sealing end caps. Considering the results of the issues analysis and the prospects of ongoing SiC research and development in other nuclear programs, recommendations on the path forward is provided in the order or priority as: (1) thermodynamic analysis and experimental examination of SiC corrosion in the candidate liquid salts, (2) assessment of long-term mechanical integrity issues using prototypical component sections, and (3) assessment of high dose radiation effects relevant to the anticipated operating condition.« less

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2000-01-01

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Prevalence of Complement-Mediated Cell Lysis-like Gene (sicG) in Streptococcus dysgalactiae subsp. equisimilis Isolates From Japan (2014-2016).

PubMed

Takahashi, Takashi; Fujita, Tomohiro; Shibayama, Akiyoshi; Tsuyuki, Yuzo; Yoshida, Haruno

2017-07-01

Streptococcus dysgalactiae subsp. equisimilis (SDSE; a β-hemolytic streptococcus of human or animal origin) infections are emerging worldwide. We evaluated the clonal distribution of complement-mediated cell lysis-like gene (sicG) among SDSE isolates from three central prefectures of Japan. Group G/C β-hemolytic streptococci were collected from three institutions from April 2014 to March 2016. Fifty-five strains (52 from humans and three from animals) were identified as SDSE on the basis of 16S rRNA sequencing data.; they were obtained from 25 sterile (blood, joint fluid, and cerebrospinal fluid) and 30 non-sterile (skin-, respiratory tract-, and genitourinary tract-origin) samples. emm genotyping, multilocus sequence typing, sicG amplification/sequencing, and random amplified polymorphic DNA (RAPD) analysis of sicG-positive strains were performed. sicG was detected in 30.9% of the isolates (16 human and one canine) and the genes from the 16 human samples (blood, 10; open pus, 3; sputum, 2; throat swab, 1) and one canine sample (open pus) showed the same sequence pattern. All sicG-harboring isolates belonged to clonal complex (CC) 17, and the most prevalent emm type was stG6792 (82.4%). There was a significant association between sicG presence and the development of skin/soft tissue infections. CC17 isolates with sicG could be divided into three subtypes by RAPD analysis. CC17 SDSE harboring sicG might have spread into three closely-related prefectures in central Japan during 2014-2016. Clonal analysis of isolates from other areas might be needed to monitor potentially virulent strains in humans and animals. © The Korean Society for Laboratory Medicine

Distribution of Pd, Ag & U in the SiC Layer of an Irradiated TRISO Fuel Particle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas M. Lillo; Isabella J. van Rooyen

2014-08-01

The distribution of silver, uranium and palladium in the silicon carbide (SiC) layer of an irradiated TRISO fuel particle was studied using samples extracted from the SiC layer using focused ion beam (FIB) techniques. Transmission electron microscopy in conjunction with energy dispersive x-ray spectroscopy was used to identify the presence of the specific elements of interest at grain boundaries, triple junctions and precipitates in the interior of SiC grains. Details on sample fabrication, errors associated with measurements of elemental migration distances and the distances migrated by silver, palladium and uranium in the SiC layer of an irradiated TRISO particle frommore » the AGR-1 program are reported.« less

Silicon carbide semiconductor device fabrication and characterization

NASA Technical Reports Server (NTRS)

Davis, R. F.; Das, K.

1990-01-01

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

Controlled epitaxial graphene growth within removable amorphous carbon corrals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmer, James; Hu, Yike; Hankinson, John

2014-07-14

We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 °C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth atmore » temperatures above 1330 °C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.« less

InP-based photonic integrated circuit platform on SiC wafer.

PubMed

Takenaka, Mitsuru; Takagi, Shinichi

2017-11-27

We have numerically investigated the properties of an InP-on-SiC wafer as a photonic integrated circuit (PIC) platform. By bonding a thin InP-based semiconductor on a SiC wafer, SiC can be used as waveguide cladding, a heat sink, and a support substrate simultaneously. Since the refractive index of SiC is sufficiently low, PICs can be fabricated using InP-based strip and rib waveguides with a minimum bend radius of approximately 7 μm. High-thermal-conductivity SiC underneath an InP-based waveguide core markedly improves heat dissipation, resulting in superior thermal properties of active devices such as laser diodes. The InP-on-SiC wafer has significantly smaller thermal stress than InP-on-SiO 2 /Si wafer, which prevents the thermal degradation of InP-based devices during high-temperature processes. Thus, InP on SiC provides an ideal platform for high-performance PICs.

Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing

NASA Astrophysics Data System (ADS)

Jia, Qi; Huang, Kai; You, Tiangui; Yi, Ailun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bin; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi

2018-05-01

SiC is a widely used wide-bandgap semiconductor, and the freestanding ultrathin single-crystalline SiC substrate provides the material platform for advanced devices. Here, we demonstrate the fabrication of a freestanding ultrathin single-crystalline SiC substrate with a thickness of 22 μm by ion slicing using 1.6 MeV H ion implantation. The ion-slicing process performed in the MeV energy range was compared to the conventional case using low-energy H ion implantation in the keV energy range. The blistering behavior of the implanted SiC surface layer depends on both the implantation temperature and the annealing temperature. Due to the different straggling parameter for two implant energies, the distribution of implantation-induced damage is significantly different. The impact of implantation temperature on the high-energy and low-energy slicing was opposite, and the ion-slicing SiC in the MeV range initiates at a much higher temperature.

Correlated Si isotope anomalies and large C-13 enrichments in a family of exotic SiC grains

NASA Technical Reports Server (NTRS)

Stone, J.; Hutcheon, I. D.; Epstein, S.; Wasserburg, G. J.

1991-01-01

A hypothesis is presented to the effect that the distinctive morphological characteristics and comparatively simple Si isotope systematics identify the platy SiC crystals as a genetically related family, formed around a single isotopically heterogeneous presolar star on an association of related stars. The enrichments in C-13 and the Si isotope systematics of the platy SiC are broadly consistent with theoretical models of nucleosynthesis in low-mass, carbon stars on the ASG. The Si isotope array most plausibly reflects mixing between (Si-28)-rich material, inherited from a previous generation of stars, and material enriched in Si-29 and Si-30, produced in intershell regions by neutron capture during He-burning. The absence of a correlation between the Si and C isotopic compositions of the SiC suggests either episodic condensation of SiC, extending over several thermal pulses, in the atmosphere of a single star, or the derivation of the SiC from several stars characterized by different rates of C-13 production.

Hysteresis in the Active Oxidation of SiC

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

2011-01-01

Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

Effect of Copper Coated SiC Reinforcements on Microstructure, Mechanical Properties and Wear of Aluminium Composites

NASA Astrophysics Data System (ADS)

Kori, P. S.; Vanarotti, Mohan; Angadi, B. M.; Nagathan, V. V.; Auradi, V.; Sakri, M. I.

2017-08-01

Experimental investigations are carried out to study the influence of copper coated Silicon carbide (SiC) reinforcements in Aluminum (Al) based Al-SiC composites. Wear behavior and mechanical Properties like, ultimate tensile strength (UTS) and hardness are studied in the present work. Experimental results clearly revealed that, an addition of SiC particles (5, 10 and 15 Wt %) has lead in the improvement of hardness and ultimate tensile strength. Al-SiC composites containing the Copper coated SiC reinforcements showed better improvement in mechanical properties compared to uncoated ones. Characterization of Al-SiC composites are carried out using optical photomicrography and SEM analysis. Wear tests are carried out to study the effects of composition and normal pressure using Pin-On Disc wear testing machine. Results suggested that, wear rate decreases with increasing SiC composition, further an improvement in wear resistance is observed with copper coated SiC reinforcements in the Al-SiC metal matrix composites (MMC’s).

Extreme temperature robust optical sensor designs and fault-tolerant signal processing

DOEpatents

Riza, Nabeel Agha [Oviedo, FL; Perez, Frank [Tujunga, CA

2012-01-17

Silicon Carbide (SiC) probe designs for extreme temperature and pressure sensing uses a single crystal SiC optical chip encased in a sintered SiC material probe. The SiC chip may be protected for high temperature only use or exposed for both temperature and pressure sensing. Hybrid signal processing techniques allow fault-tolerant extreme temperature sensing. Wavelength peak-to-peak (or null-to-null) collective spectrum spread measurement to detect wavelength peak/null shift measurement forms a coarse-fine temperature measurement using broadband spectrum monitoring. The SiC probe frontend acts as a stable emissivity Black-body radiator and monitoring the shift in radiation spectrum enables a pyrometer. This application combines all-SiC pyrometry with thick SiC etalon laser interferometry within a free-spectral range to form a coarse-fine temperature measurement sensor. RF notch filtering techniques improve the sensitivity of the temperature measurement where fine spectral shift or spectrum measurements are needed to deduce temperature.

Dimensional stability and anisotropy of SiC and SiC-based composites in transition swelling regime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katoh, Yutai; Koyanagi, Takaaki; McDuffee, Joel L.

Swelling, or volumetric expansion, is an inevitable consequence of the atomic displacement damage in crystalline silicon carbide (SiC) caused by energetic neutron irradiation. Because of its steep temperature and dose dependence, understanding swelling is essential for designing SiC-based components for nuclear applications. Here in this study, swelling behaviors of monolithic CVD SiC and nuclear grade SiC fiber – SiC matrix (SiC/SiC) composites were accurately determined, supported by the irradiation temperature determination for individual samples, following neutron irradiation within the lower transition swelling temperature regime. Slightly anisotropic swelling behaviors were found for the SiC/SiC samples and attributed primarily to the combinedmore » effects of the pre-existing microcracking, fiber architecture, and specimen dimension. A semi-empirical model of SiC swelling was calibrated and presented. Finally, implications of the refined model to selected swelling-related issues for SiC-based nuclar reactor components are discussed.« less

Dimensional stability and anisotropy of SiC and SiC-based composites in transition swelling regime

DOE PAGES

Katoh, Yutai; Koyanagi, Takaaki; McDuffee, Joel L.; ...

2017-12-08

Swelling, or volumetric expansion, is an inevitable consequence of the atomic displacement damage in crystalline silicon carbide (SiC) caused by energetic neutron irradiation. Because of its steep temperature and dose dependence, understanding swelling is essential for designing SiC-based components for nuclear applications. Here in this study, swelling behaviors of monolithic CVD SiC and nuclear grade SiC fiber – SiC matrix (SiC/SiC) composites were accurately determined, supported by the irradiation temperature determination for individual samples, following neutron irradiation within the lower transition swelling temperature regime. Slightly anisotropic swelling behaviors were found for the SiC/SiC samples and attributed primarily to the combinedmore » effects of the pre-existing microcracking, fiber architecture, and specimen dimension. A semi-empirical model of SiC swelling was calibrated and presented. Finally, implications of the refined model to selected swelling-related issues for SiC-based nuclar reactor components are discussed.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Haiming; van Rooyen, Isabella J.

Here, detailed electron microscopy studies were performed to investigate the distribution and composition of fission products in the SiC layer of a tristructural isotropic coated particle exhibiting localized corrosion. Previous studies on this particle indicated that pure carbon areas in the SiC layer, resulting from localized corrosion of SiC by Pd, provide pathways for Ag, Cd and Cs migration. This study reveals the presence of Ag- and/or Cd-containing precipitates in un-corroded SiC areas. Ag/Cd may exist by themselves or coexist with Pd. Ag/Cd mainly transport along SiC grain boundaries. An Ag-Pd-Cd precipitate was identified at a stacking fault inside amore » SiC grain, suggesting that intragranular transport of Ag/Cd is possible. Ce is present with Pd or Pd-U in some precipitates >50 nm. U and Ce frequently coexist with each other, whereas Ag/Cd usually does not coexist with U or Ce. No Cs was detected in any precipitates in the areas examined.« less

Reality Monitoring and Feedback Control of Speech Production Are Related Through Self-Agency.

PubMed

Subramaniam, Karuna; Kothare, Hardik; Mizuiri, Danielle; Nagarajan, Srikantan S; Houde, John F

2018-01-01

Self-agency is the experience of being the agent of one's own thoughts and motor actions. The intact experience of self-agency is necessary for successful interactions with the outside world (i.e., reality monitoring) and for responding to sensory feedback of our motor actions (e.g., speech feedback control). Reality monitoring is the ability to distinguish internally self-generated information from outside reality (externally-derived information). In the present study, we examined the relationship of self-agency between lower-level speech feedback monitoring (i.e., monitoring what we hear ourselves say) and a higher-level cognitive reality monitoring task. In particular, we examined whether speech feedback monitoring and reality monitoring were driven by the capacity to experience self-agency-the ability to make reliable predictions about the outcomes of self-generated actions. During the reality monitoring task, subjects made judgments as to whether information was previously self-generated (self-agency judgments) or externally derived (external-agency judgments). During speech feedback monitoring, we assessed self-agency by altering environmental auditory feedback so that subjects listened to a perturbed version of their own speech. When subjects heard minimal perturbations in their auditory feedback while speaking, they made corrective responses, indicating that they judged the perturbations as errors in their speech output. We found that self-agency judgments in the reality-monitoring task were higher in people who had smaller corrective responses ( p = 0.05) and smaller inter-trial variability ( p = 0.03) during minimal pitch perturbations of their auditory feedback. These results provide support for a unitary process for the experience of self-agency governing low-level speech control and higher level reality monitoring.

Chemical Corrosion of Liquid-Phase Sintered SiC in Acidic/Alkaline Solutions Part 1. Corrosion in HNO3 Solution

NASA Astrophysics Data System (ADS)

Zhang, Lei; Zhang, Ming; He, Xinnong; Tang, Wenming

2016-03-01

The corrosion behavior of the liquid-phase sintered SiC (LPS-SiC) was studied by dipping in 3.53 mol/L HNO3 aqueous solution at room temperature and 70 °C, respectively. The weight loss, strength reduction and morphology evolution of the SiC specimens during corroding were revealed and also the chemical corrosion process and mechanism of the SiC specimens in the acidic solution were clarified. The results show that the corrosion of the LPS-SiC specimens in the HNO3 solution is selective. The SiC particles are almost free from corrosion, but the secondary phases of BaAl2Si2O8 (BAS) and Y2Si2O7 are corroded via an acid-alkali neutralization reaction. BAS has a higher corrosion rate than Y2Si2O7, resulting in the formation of the bamboo-leaf-like corrosion pits. As the SiC specimens etched in the HNO3 solution at room temperature for 75 days, about 80 μm thickness corrosion layer forms. The weight loss and bending strength reduction of the etched SiC specimens are 2.6 mg/cm2 and 52%, respectively. The corrosion of the SiC specimens is accelerated in the 70 °C HNO3 solution with a rate about five times bigger than that in the same corrosion medium at room temperature.

Assessment of On-Site Power Opportunities in the Industrial Sector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bryson, T.

2001-10-08

The purpose of this report is to identify the potential for on-site power generation in the U.S. industrial sector with emphasis on nine industrial groups called the ''Industries of the Future'' (IOFs) by the U.S. Department of Energy (DOE). Through its Office of Industrial Technologies (OIT), the DOE has teamed with the IOFs to develop collaborative strategies for improving productivity, global competitiveness, energy usage and environmental performance. Total purchases for electricity and steam for the IOFs are in excess of $27 billion annually. Energy-related costs are very significant for these industries. The nine industrial groups are (1) Agriculture (SIC 1);more » (2) Forest products; (3) Lumber and wood products (SIC 24); (4) Paper and allied products (SIC 26); (5) Mining (SIC 11, 12, 14); (6) Glass (SIC 32); (7) Petroleum (SIC 29); (8) Chemicals (SIC 28); and (9) Metals (SIC 33): Steel, Aluminum, and Metal casting. Although not currently part of the IOF program, the food industry is included in this report because of its close relationship to the agricultural industry and its success with on-site power generation. On-site generation provides an alternative means to reduce energy costs, comply with environmental regulations, and ensure a reliable power supply. On-site generation can ease congestion in the local utility's electric grid. Electric market restructuring is exacerbating the price premium for peak electricity use and for reliability, creating considerable market interest in on-site generation.« less

Historical and New Perspective of Moissanite in the Canyon Diablo Meteorite

NASA Astrophysics Data System (ADS)

Leung, I. S.; Winston, R.

2004-12-01

Silicon carbide (SiC) was reportedly found in the residue of a 50-kg sample of the Canyon Diablo meteorite dissolved in acid by Henri Moissan, and, in his honor, George F. Kunz coined the mineral name moissanite in 1904. Scholars of the same meteorite, unable to find SiC, believed that Moissan's sample might have been contaminated by synthetic SiC used in tools and abrasives. Thus, an intriguing mineralogical controversy ensued to this day. Recently, occurrence of SiC in carbonaceous chondrites has been confirmed. We present in this paper our finding of three varieties of SiC crystals in the Canyon Diablo meteorite. We found 5 crystals of SiC (size 70-150 microns) in a black nodule (1 cm in size), composed mostly of disordered graphite and diamond/lonsdaleite. The crystals are pale blue, but some have dark overgrowths of uneven thickness, and black spotty or feathery inclusions. Their forms are rounded and resorbed. Our second specimen is oxidized and friable, bearing a 2-cm nodule showing sandy and black magnetic layers. We found 3 apple-green crystals, up to 200 microns in size. Scattered over two of the sandy layers are many minute emerald-green SiC crystals. Carbon in these crystals might have a terrestrial origin. As Moissan's crystals are no longer available for re-examination, a study of large carbon nodules housed in museums might at least lend credence that meteoritic SiC crystals could be as large as ones reported by Moissan.

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2003-01-01

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.

Proceedings of the First International Symposium on the Interaction of Non-Nuclear Munitions with Structures: Held at U.S. Air Force Academy, Colorado on May 10-13, 1983. Part 1.

DTIC Science & Technology

1983-05-01

orre mosdismiel which uses& that pre-lictioa ram be maim umima eel Us have been developing a general solution for self -caoaiteot set of metric or...meet pert, analytical Stu-si dies of the Somliear respose of reio- forced costrate structures have bat At present, multi-dimemslosel aa focused, by s...quantities is avail- able and the applications are limited in 6 this respect. However, the entire develop- ment is " self -correcting" in the sense that 4 as

Reliability Concerns for Flying SiC Power MOSFETs in Space

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Witulski, A. F.; Schrimpf, R. D.; Sternberg, A. L.; Ball, D. R.; Javanainen, A.; Reed, R. A.; Sierawski, B. D.; Lauenstein, J.-M.

2018-01-01

SiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.

29 CFR 510.21 - SIC codes.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 29 Labor 3 2010-07-01 2010-07-01 false SIC codes. 510.21 Section 510.21 Labor Regulations Relating to Labor (Continued) WAGE AND HOUR DIVISION, DEPARTMENT OF LABOR REGULATIONS IMPLEMENTATION OF THE... Classification of Industries § 510.21 SIC codes. (a) The Conference Report specifically cites Puerto Rico's...

A Novel Polymeric Organosilazane Precursor to Si3N4/SiC Ceramics.

DTIC Science & Technology

1985-02-06

prepared by pyrolysis of the appropriately-shaped polymeric precursor. These polysilazanes also may prove to be useful as dispersants for SiC and Si3N4...I[AD-Ri58 748 A NOVEL POLYMERIC ORGANOSILAZANE PRECURSOR TO S13N4/ SIC i/I CERRMICS(U) MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF CHEMISTRY D...Security C ificatlion" 0322 A Novel Polymeric Organosilazane Precursor to Si3N/ SiC C_ramics._I 12. PERSONAL AUTHOR(S) Dietmar Seyferth and Gary H. Wiseman 13

A New Method to Grow SiC: Solvent-Laser Heated Floating Zone

NASA Technical Reports Server (NTRS)

Woodworth, Andrew A.; Neudeck, Philip G.; Sayir, Ali

2012-01-01

The solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.

Effects of UV light intensity on electrochemical wet etching of SiC for the fabrication of suspended graphene

NASA Astrophysics Data System (ADS)

O, Ryong-Sok; Takamura, Makoto; Furukawa, Kazuaki; Nagase, Masao; Hibino, Hiroki

2015-03-01

We report on the effects of UV light intensity on the photo assisted electrochemical wet etching of SiC(0001) underneath an epitaxially grown graphene for the fabrication of suspended structures. The maximum etching rate of SiC(0001) was 2.5 µm/h under UV light irradiation in 1 wt % KOH at a constant current of 0.5 mA/cm2. The successful formation of suspended structures depended on the etching rate of SiC. In the Raman spectra of the suspended structures, we did not observe a significant increase in the intensity of the D peak, which originates from defects in graphene sheets. This is most likely explained by the high quality of the single-crystalline graphene epitaxially grown on SiC.

Toxicity assessment of SiC nanofibers and nanorods against bacteria.

PubMed

Szala, Mateusz; Borkowski, Andrzej

2014-02-01

In the present study, evidence of the antibacterial effects of silicon carbide (SiC) nanofibers (NFSiC) and nanorods (NRSiC) obtained by combustion synthesis has been presented. It has been shown that the examined bacteria, Pseudomonas putida, could bind to the surface of the investigated SiC nanostructures. The results of respiration measurements, dehydrogenase activity measurements, and evaluation of viable bacteria after incubation with NFSiC and NRSiC demonstrated that the nanostructures of SiC affect the growth and activity of the bacteria examined. The direct count of bacteria stained with propidium iodide after incubation with SiC nanostructures revealed that the loss of cell membrane integrity could be one of the main effects leading to the death of the bacteria. © 2013 Published by Elsevier Inc.

On the melt infiltration of copper coated silicon carbide with an aluminium alloy

NASA Technical Reports Server (NTRS)

Asthana, R.; Rohatgi, P. K.

1992-01-01

Pressure-assisted infiltration of porous compacts of Cu coated and uncoated single crystals of platelet shaped alpha (hexagonal) SiC was used to study infiltration dynamics and particulate wettability with a 2014 Al alloy. The infiltration lengths were measured for a range of experimental variables which included infiltration pressure, infiltration time, and SiC size. A threshold pressure (P(th)) for flow initiation through compacts was identified from an analysis of infiltration data; P(th) decreased while penetration lengths increased with increasing SiC size (more fundamentally, due to changes in interparticle pore size) and with increasing infiltration times. Cu coated SiC led to lower P(th) and 60-80 percent larger penetration lengths compared to uncoated SiC under identical processing conditions.

Hydrothermal corrosion of silicon carbide joints without radiation

DOE PAGES

Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; ...

2016-09-28

In this paper, hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti—Si—C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environmentsmore » without radiation. Finally, the SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.« less

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

NASA Technical Reports Server (NTRS)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

A comparative study of the mechanical and thermal properties of defective ZrC, TiC and SiC.

PubMed

Jiang, M; Zheng, J W; Xiao, H Y; Liu, Z J; Zu, X T

2017-08-24

ZrC and TiC have been proposed to be alternatives to SiC as fuel-cladding and structural materials in nuclear reactors due to their strong radiation tolerance and high thermal conductivity at high temperatures. To unravel how the presence of defects affects the thermo-physical properties under irradiation, first-principles calculations based on density function theory were carried out to investigate the mechanical and thermal properties of defective ZrC, TiC and SiC. As compared with the defective SiC, the ZrC and TiC always exhibit larger bulk modulus, smaller changes in the Young's and shear moduli, as well as better ductility. The total thermal conductivity of ZrC and TiC are much larger than that of SiC, implying that under radiation environment the ZrC and TiC will exhibit superior heat conduction ability than the SiC. One disadvantage for ZrC and TiC is that their Debye temperatures are generally lower than that of SiC. These results suggest that further improving the Debye temperature of ZrC and TiC will be more beneficial for their applications as fuel-cladding and structural materials in nuclear reactors.

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Tae-Youb; Ahn, Chang-Geun

2015-05-25

We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injectedmore » into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.« less

The microstructures of SCS-6 and SCS-8 SiC reinforcing fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sattler, M.L.; Kinney, J.H.; Zywicz, E.

The microstructures of SCS-6 and SCS-8 SiC fibers have been examined and analyzed using high resolution transmission electron microscopy (HRTEM), microdiffraction, parallel electron energy loss spectroscopy (PEELS), x-ray diffraction and x-ray spectroscopy. The results of the study confirm findings from earlier studies wherein the microstructure of the fibers have been described as consisting of {beta}-SiC grown upon a monofilament turbostratic carbon core. The present study, however, provides much more detail regarding this microstructure. For example, PEELS spectroscopy and x-ray microscopy indicate that the composition of the SiC varies smoothly from SiC plus free C near the carbon core to SiCmore » at the midradial boundary. The SiC stoichiometry is roughly preserved from the midradial boundary to the exterior interface. HRTEM, microdiffraction, and dark field images provide evidence that the excess carbon is amorphous free carbon which is most likely situated at the grain boundaries of the SiC. The x-ray microscopy results are also consistent with the presence of two phases near the core which consist of SiC and free carbon having density less than graphite (2.25 g/cc). This complex microstructure may explain the recent observations of nonplanar failure in composites fabricated with SCS fibers.« less

Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

PubMed

Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

2017-04-19

The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

Light and Strong Hierarchical Porous SiC Foam for Efficient Electromagnetic Interference Shielding and Thermal Insulation at Elevated Temperatures.

PubMed

Liang, Caiyun; Wang, Zhenfeng; Wu, Lina; Zhang, Xiaochen; Wang, Huan; Wang, Zhijiang

2017-09-06

A novel light but strong SiC foam with hierarchical porous architecture was fabricated by using dough as raw material via carbonization followed by carbothermal reduction with silicon source. A significant synergistic effect is achieved by embedding meso- and nanopores in a microsized porous skeleton, which endows the SiC foam with high-performance electromagnetic interference (EMI) shielding, thermal insulation, and mechanical properties. The microsized skeleton withstands high stress. The meso- and nanosized pores enhance multiple reflection of the incident electromagnetic waves and elongate the path of heat transfer. For the hierarchical porous SiC foam with 72.8% porosity, EMI shielding can be higher than 20 dB, and specific EMI effectiveness exceeds 24.8 dB·cm 3 ·g -1 at a frequency of 11 GHz at 25-600 °C, which is 3 times higher than that of dense SiC ceramic. The thermal conductivity reaches as low as 0.02 W·m -1 ·K -1 , which is comparable to that of aerogel. The compressive strength is as high as 9.8 MPa. Given the chemical and high-temperature stability of SiC, the fabricated SiC foam is a promising candidate for modern aircraft and automobile applications.

Si/C hybrid nanostructures for Li-ion anodes: An overview

NASA Astrophysics Data System (ADS)

Terranova, Maria Letizia; Orlanducci, Silvia; Tamburri, Emanuela; Guglielmotti, Valeria; Rossi, Marco

2014-01-01

This review article summarizes recent and increasing efforts in the development of novel Li ion cell anode nanomaterials based on the coupling of C with Si. The rationale behind such efforts is based on the fact that the Si-C coupling realizes a favourable combination of the two materials properties, such as the high lithiation capacity of Si and the mechanical and conductive properties of C, making Si/C hybrid nanomaterials the ideal candidates for innovative and improved Li-ion anodes. Together with an overview of the methodologies proposed in the last decade for material preparation, a discussion on relationship between organization at the nanoscale of the hybrid Si/C systems and battery performances is given. An emerging indication is that the enhancement of the batteries efficiency in terms of mass capacity, energy density and cycling stability, resides in the ability to arrange Si/C bi-component nanostructures in pre-defined architectures. Starting from the results obtained so far, this paper aims to indicate some emerging directions and to inspire promising routes to optimize fabrication of Si/C nanomaterials and engineering of Li-ion anodes structures. The use of Si/C hybrid nanostructures could represents a viable and effective solution to the foreseen limits of present lithium ion technology.

Decomposition of silicon carbide at high pressures and temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Daviau, Kierstin; Lee, Kanani K. M.

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60more » GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.« less

Effects of SiC whiskers and particles on precipitation in aluminum matrix composites

NASA Astrophysics Data System (ADS)

Papazian, John M.

1988-12-01

The age-hardening precipitation reactions in aluminum matrix composites reinforced with discontinuous SiC were studied using a calorimetric technique. Composites fabricated with 2124, 2219, 6061, and 7475 alloy matrices were obtained from commercial sources along with unreinforced control materials fabricated in a similar manner. The 7475 materials were made by a casting process while the others were made by powder metallurgy: the SiC reinforcement was in the form of whiskers or particulate. It was found that the overall age-hardening sequence of the alloy was not changed by the addition of SiC, but that the volume fractions of various phases and the precipitation kinetics were substantially modified. Precipitation and dissolution kinetics were generally accelerated. A substantial portion of this acceleration was found to be due to the powder metallurgy process employed to make the composites, but the formation kinetics of some particular precipitate phases were also strongly affected by the presence of SiC. It was observed that the volume fraction of GP zones able to form in the SiC containing materials was significantly reduced. The presence of SiC particles also caused normally quench insensitive materials such as 6061 to become quench sensitive. The microstructural origins of these effects are discussed.

U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

DOE Office of Scientific and Technical Information (OSTI.GOV)

George W. Griffith

2011-10-01

A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows formore » ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.« less

New R-SiC extends service life in kiln furniture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sonntag, A.

1997-11-01

Silicon carbide kiln furniture systems are an essential part of modern high-temperature technology. SiC ceramics have exceptional high-temperature stability and thermal shock resistance., They show no plastic deformation (creep) under mechanical load and maintain their geometry after each high-temperature cycle. Therefore, various new kiln systems with light and open setting patterns can be realized where more fired goods can be produced with less kiln furniture ballast and within shorter firing cycles. The fast-firing technology of porcelain is an opportunity for new SiC kiln furniture ceramics. The new SiC ceramic systems available include: (1) recrystallized SiC (R-SiC); (2) silicon-infiltrated reaction-bonded SiCmore » (SiSiC); and (3) nitride-bonded SiC (NSiC). The new SiC ceramics have an important production criterion in common. They show practically no shrinkage during production. This is important for the manufacture of large shapes, such as beams, rollers and setter plates, as well as tailored geometries that allow light and open kiln furniture construction. Because of the extraordinarily high thermal shock resistance, high strength and high-temperature creep stability of these SiC ceramics, delicate and precise kiln furniture configurations have been introduced. One application is the fast firing of tableware with automatic setting robots.« less

Chemical reactivity of SiC fibre-reinforced SiC with beryllium and lithium ceramic breeder materials

NASA Astrophysics Data System (ADS)

Kleykamp, H.

2000-12-01

SiC fibre-reinforced SiC fabrics (f-SiC/SiC) are considered for structural materials of advanced fusion blanket concepts. Priority tasks are compatibility studies of SiC with Li breeder ceramics and the Be neutron multiplier. Isothermal and anisothermal powder reactions by DTA up to 1220°C were examined between Li 4SiO 4, Li 2ZrO 3 and Li 2TiO 3, respectively, and SiC and SiC/SiO 2 mixtures, respectively. The SiC/SiO 2 mixture simulated the chemical state of Nicalon fibres. Solid state reactions between SiC and Be pellets were studied by capsule experiments. The reaction products Be 2C and Si were observed between the initial phases after annealing at 800°C and 900°C. A parabolic time law with a chemical diffusion coefficient D˜=2.6×10 -15 m 2/s of Be in the products was deduced at 900°C. Additional oxygen released from SiO 2 as a component of the simulated fibres oxidised the reaction products via the gas phase by formation of a Be 2SiO 4 layer. All reactions are kinetically hindered below 700°C.

Tackling optimization challenges in industrial load control and full-duplex radios

NASA Astrophysics Data System (ADS)

Gholian, Armen

In price-based demand response programs in smart grid, utilities set the price in accordance with the grid operating conditions and consumers respond to price signals by conducting optimal load control to minimize their energy expenditure while satisfying their energy needs. Industrial sector consumes a large portion of world electricity and addressing optimal load control of energy-intensive industrial complexes, such as steel industry and oil-refinery, is of practical importance. Formulating a general industrial complex and addressing issues in optimal industrial load control in smart grid is the focus of the second part of this dissertation. Several industrial load details are considered in the proposed formulation, including those that do not appear in residential or commercial load control problems. Operation under different smart pricing scenarios, namely, day-ahead pricing, time-of-use pricing, peak pricing, inclining block rates, and critical peak pricing are considered. The use of behind-the-meter renewable generation and energy storage is also considered. The formulated optimization problem is originally nonlinear and nonconvex and thus hard to solve. However, it is then reformulated into a tractable linear mixed-integer program. The performance of the design is assessed through various simulations for an oil refinery and a steel mini-mill. In the third part of this dissertation, a novel all-analog RF interference canceler is proposed. Radio self-interference cancellation (SIC) is the fundamental enabler for full-duplex radios. While SIC methods based on baseband digital signal processing and/or beamforming are inadequate, an all-analog method is useful to drastically reduce the self-interference as the first stage of SIC. It is shown that a uniform architecture with uniformly distributed RF attenuators has a performance highly dependent on the carrier frequency. It is also shown that a new architecture with the attenuators distributed in a clustered fashion has important advantages over the uniform architecture. These advantages are shown numerically through random multipath interference channels, number of control bits in step attenuators, attenuation-dependent phases, single and multi-level structures, etc.

Investigating the Non-Covalent Functionalization and Chemical Transformation of Graphene

NASA Astrophysics Data System (ADS)

Sham, Chun-Hong

Trend in device miniatures demands capabilities to produce rationally designed patterns in ever-shrinking length scale. The research community has examined various techniques to push the current lithography resolution to sub-10nm scale. One of the ideas is to utilize the natural nanoscale patterns of molecular assemblies. In this thesis, the self-assembling phenomenon of a photoactive molecule on epitaxial graphene (EG) grown on SiC was discussed. This molecular assembly enables manipulation of chemical contrast in nanoscale through UV exposure or atomic layer deposition. Future development of nanoelectronics industry will be fueled by innovations in electronics materials, which could be discovered through covalent modification of graphene. In a study reported in this thesis, silicon is deposited onto EG. After annealing, a new surface reconstruction, identified to be (3x3)-SiC, was formed. Raman spectroscopy finds no signature of graphene after annealing, indicating a complete chemical transformation of graphene. DFT calculations reveal a possible conversion mechanism. Overall, these studies provide insights for future device miniaturization; contribute to the search of novel materials and help bridging the gap between graphene and current silicon-based industrial infrastructures.

Monoamine oxidase A genotype, childhood adversity, and criminal behavior in an incarcerated sample.

PubMed

Armstrong, Todd A; Boutwell, Brian B; Flores, Shahida; Symonds, Mary; Keller, Shawn; Gangitano, David A

2014-08-01

A number of studies have found a functional variable number tandem repeat polymorphism in the upstream regulatory region of the monoamine oxidase A gene (MAOA-uVNTR) interacts with childhood adversity to increase risk for antisocial behavior. Several studies have also reported null findings. Here, we examine the association between MAOA-uVNTR genotype, childhood adversity, and criminal activity in a sample of 99 male volunteers who were incarcerated in a large city jail in the Southern United States. MAOA-uVNTR genotypes were obtained from DNA extracted from buccal swabs. Criminal activity in the year before incarceration and childhood adversity were measured with self-report surveys. Violent arrest rates and property arrest rates were quantified with official records of arrest and accounted for periods of incarceration in local and state correctional facilities. The low expressing allele of the MAOA-uVNTR genotype (MAOAL) interacted with abuse to predict self-reports of less serious criminal and delinquent behavior and had a direct association with serious criminal activity. MAOAL genotype interacted with parental criminality to predict self-reports of serious criminal behavior, property arrest rates, and violent arrest rates. The findings suggest that crime prevention efforts may be improved through attention to the neurodevelopmental consequence of gene-by-environment interactions.

Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices

NASA Technical Reports Server (NTRS)

Mehdi, I.; Haddad, George I.; Mains, R. K.

1989-01-01

There are two points that should be noted. First, in the thermal resistance calculations it is assumed that the device is operating at 773 K while the results of the room temperature simulations are used. This was done because there is not enough information to correctly predict the material parameters at 773 K. Since, in general, device performance degrades with increasing temperature, the cw results are perhaps a bit optimistic. Second, the electric field in these structures gets extremely high and there might be some possibility of tunneling. This was not incorporated into the simulation. Again, this could result in different device operating conditions.

SiC-Based Composite Materials Obtained by Siliconizing Carbon Matrices

NASA Astrophysics Data System (ADS)

Shikunov, S. L.; Kurlov, V. N.

2017-12-01

We have developed a method for fabrication of parts of complicated configuration from composite materials based on SiC ceramics, which employs the interaction of silicon melt with the carbon matrix having a certain composition and porosity. For elevating the operating temperatures of ceramic components, we have developed a method for depositing protective silicon-carbide coatings that is based on the interaction of the silicon melt and vapor with carbon obtained during thermal splitting of hydrocarbon molecules. The new structural ceramics are characterized by higher operating temperatures; chemical stability; mechanical strength; thermal shock, wear and radiation resistance; and parameters stability.

Plasma-laser ion discrimination by TOF technique applied to coupled SiC detectors.

NASA Astrophysics Data System (ADS)

Cavallaro, Salvatore

2018-01-01

The rate estimation of nuclear reactions induced in high intensity laser-target interaction (≥1016 W/cm2), is strongly depending on the neutron detection efficiency and ion charge discrimination, according to particles involved in exit open-channels. Ion discrimination is basically performed by means of analysis of pits observed on track detector, which is critically dependent on calibration and/or fast TOF devices based on SiC and diamond detectors. Last setup is used to determine the ion energy and to obtain a rough estimation of yields. However, for each TOF interval, the dependence of yield from the energy deposited in the detector sensitive region, introduces a distortion in the ion spectra. Moreover, if two ion species are present in the same spectrum, the discrimination of their contribution is not attainable. In this paper a new method is described which allows to discriminate the contribution of two ion species in the wide energy range of nuclear reactions induced in laser-target interactions. The method is based on charge response of two TOF-SiC detectors, of suitable thicknesses, placed in adjacent positions. In presence of two ion species, the response of the detectors, associated with different energy losses, can determine the ion specific contribution to each TOF interval.

Toward tunable doping in graphene FETs by molecular self-assembled monolayers

NASA Astrophysics Data System (ADS)

Li, Bing; Klekachev, Alexander V.; Cantoro, Mirco; Huyghebaert, Cedric; Stesmans, André; Asselberghs, Inge; de Gendt, Stefan; de Feyter, Steven

2013-09-01

In this paper, we report the formation of self-assembled monolayers (SAMs) of oleylamine (OA) on highly oriented pyrolytic graphite (HOPG) and graphene surfaces and demonstrate the potential of using such organic SAMs to tailor the electronic properties of graphene. Molecular resolution Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) images reveal the detailed molecular ordering. The electrical measurements show that OA strongly interacts with graphene leading to n-doping effects in graphene devices. The doping levels are tunable by varying the OA deposition conditions. Importantly, neither hole nor electron mobilities are decreased by the OA modification. As a benefit from this noncovalent modification strategy, the pristine characteristics of the device are recoverable upon OA removal. From this study, one can envision the possibility to correlate the graphene-based device performance with the molecular structure and supramolecular ordering of the organic dopant.In this paper, we report the formation of self-assembled monolayers (SAMs) of oleylamine (OA) on highly oriented pyrolytic graphite (HOPG) and graphene surfaces and demonstrate the potential of using such organic SAMs to tailor the electronic properties of graphene. Molecular resolution Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) images reveal the detailed molecular ordering. The electrical measurements show that OA strongly interacts with graphene leading to n-doping effects in graphene devices. The doping levels are tunable by varying the OA deposition conditions. Importantly, neither hole nor electron mobilities are decreased by the OA modification. As a benefit from this noncovalent modification strategy, the pristine characteristics of the device are recoverable upon OA removal. From this study, one can envision the possibility to correlate the graphene-based device performance with the molecular structure and supramolecular ordering of the organic dopant. Electronic supplementary information (ESI) available: AFM images of self-assembled monolayers of OA on HOPG; AFM height image of the graphene surface on a SiC substrate; high resolution STM image of a self-assembled monolayer of OA on HOPG; transfer curves of a graphene FET with and without baking steps; transfer curves of a graphene FET under high vacuum conditions; transfer curves of a graphene FET and its Raman response before and after OA treatment; transfer curves of a graphene FET before and after rinsing with n-hexane. See DOI: 10.1039/c3nr01255g

Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

NASA Astrophysics Data System (ADS)

Ebrahimpour, Omid

In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the second part of the project. Alumina sol was synthesized by the hydrolysis of Aluminum isopropoxide using the Yoldas method. Alumina sol was homogenous and had a needle-like shape with a thickness of 2--3 nm. Crystalline changes during the heating process of alumina sol were studied using XRD. In addition, Fourier transform infrared (FTIR) spectroscopy was performed to identify the functional groups on the alumina sol surface as a function of temperature. In the third part of the project, the feasibility of the in-situ polymerization technique was investigated to fabricate porous SiC ceramics. In this part, the mixture of SiC and calcined alumina powders were coated by polyethylene via in-situ polymerizing referred to as the polymerization compounding process in a slurry phase. The polymerization was conducted under very moderate operational conditions using the Ziegler-Natta catalyst system. Differential scanning calorimetry (DSC) and TGA analysis and morphological studies (SEM and TEM) revealed the presence of a high density of polyethylene on the surface of SiC and alumina powders. The amount of polymer was controlled by the polymerization reaction time. Most parts of particles were coated by a thin layer of polyethylene and polymer. The porous SiC ceramics, which were fabricated by these treated particles showed higher mechanical and physical properties compared to the samples made without any treatment. The relative intensity of mullite was higher compared to the samples prepared by the traditional process. The effects of the sintering temperature, forming pressure and polymer content were also studied on the physical and mechanical properties of the final product. In the last phase of this research work, the focus of the investigation was to take advantage of both the sol-gel processing and in-situ polymerization method to develop a new process to manufacture mullite-bonded porous SiC ceramic with enhanced mechanical and physical properties. Therefore, first the SiC particles and alumina nano powders were mixed in alumina sol to adjust the alumina weight to 35 wt%. Then, the desired amount of catalyst, which depends on the total surface area of the particles, was grafted onto the surface of the powders under an inert atmosphere. Consequently, the polymerization started from the surface of the substrate. The treated powders were characterized by SEM, XPS and TGA. In addition, the amount of pore-former was determined by TGA analysis. Porous SiC ceramics, which were fabricated by the novel process, consist of mullite, SiC, cristobalite and a small amount of alumina and TiO 2 as a result of reaction of TiCl4 with air. Furthermore, the effect of the sintering temperatures (1500°C, 1550°C and 1600°C) on the crystalline structure of the porous samples was investigated. Furthermore, it was proposed that converting TiCl4 to TiO2 acted as the sintering additive to form mullite at a lower sintering temperature. (Abstract shortened by UMI.).

FORMATION OF SiC GRAINS IN PULSATION-ENHANCED DUST-DRIVEN WIND AROUND CARBON-RICH ASYMPTOTIC GIANT BRANCH STARS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yasuda, Yuki; Kozasa, Takashi, E-mail: yuki@antares-a.sci.hokudai.ac.jp

2012-02-01

We investigate the formation of silicon carbide (SiC) grains in the framework of dust-driven wind around pulsating carbon-rich asymptotic giant branch (C-rich AGB) stars to reveal not only the amount but also the size distribution. Two cases are considered for the nucleation process: one is the local thermal equilibrium (LTE) case where the vibration temperature of SiC clusters T{sub v} is equal to the gas temperature as usual, and another is the non-LTE case in which T{sub v} is assumed to be the same as the temperature of small SiC grains. The results of the hydrodynamical calculations for a modelmore » with stellar parameters of mass M{sub *} = 1.0 M{sub Sun }, luminosity L{sub *} = 10{sup 4} L{sub Sun }, effective temperature T{sub eff} = 2600 K, C/O ratio = 1.4, and pulsation period P = 650 days show the following: in the LTE case, SiC grains condense in accelerated outflowing gas after the formation of carbon grains, and the resulting averaged mass ratio of SiC to carbon grains of {approx}10{sup -8} is too small to reproduce the value of 0.01-0.3, which is inferred from the radiative transfer models. On the other hand, in the non-LTE case, the formation region of the SiC grains is more internal and/or almost identical to that of the carbon grains due to the so-called inverse greenhouse effect. The mass ratio of SiC to carbon grains averaged at the outer boundary ranges from 0.098 to 0.23 for the sticking probability {alpha}{sub s} = 0.1-1.0. The size distributions with the peak at {approx}0.2-0.3 {mu}m in radius cover the range of size derived from the analysis of the presolar SiC grains. Thus, the difference between the temperatures of the small cluster and gas plays a crucial role in the formation process of SiC grains around C-rich AGB stars, and this aspect should be explored for the formation process of dust grains in astrophysical environments.« less

Soil Inorganic Carbon Formation: Can Parent Material Overcome Climate?

NASA Astrophysics Data System (ADS)

Stanbery, C.; Will, R. M.; Seyfried, M. S.; Benner, S. G.; Flores, A. N.; Guilinger, J.; Lohse, K. A.; Good, A.; Black, C.; Pierce, J. L.

2014-12-01

Soil carbon is the third largest carbon reservoir and is composed of both organic and inorganic constituents. However, the storage and flux of soil carbon within the global carbon cycle are not fully understood. While organic carbon is often the focus of research, the factors controlling the formation and dissolution of soil inorganic carbon (SIC) are complex. Climate is largely accepted as the primary control on SIC, but the effects of soil parent material are less clear. We hypothesize that effects of parent material are significant and that SIC accumulation will be greater in soils formed from basalts than granites due to the finer textured soils and more abundant calcium and magnesium cations. This research is being conducted in the Reynolds Creek Experimental Watershed (RCEW) in southwestern Idaho. The watershed is an ideal location because it has a range of gradients in precipitation (250 mm to 1200 mm), ecology (sagebrush steppe to juniper), and parent materials (a wide array of igneous and sedimentary rock types) over a relatively small area. Approximately 20 soil profiles will be excavated throughout the watershed and will capture the effects of differing precipitation amounts and parent material on soil characteristics. Several samples at each site will be collected for analysis of SIC content and grain size distribution using a pressure calcimeter and hydrometers, respectively. Initial field data suggests that soils formed over basalts have a higher concentration of SIC than those on granitic material. If precipitation is the only control on SIC, we would expect to see comparable amounts in soils formed on both rock types within the same precipitation zone. However, field observations suggest that for all but the driest sites, soils formed over granite had no SIC detected while basalt soils with comparable precipitation had measurable amounts of SIC. Grain size distribution appears to be a large control on SIC as the sandier, granitic soils promote deeper percolation. This ongoing research will clarify the processes involved in SIC formation and identify the situations where it is an atmospheric source or sink.

Influence of surface morphology and UFG on damping and mechanical properties of composite reinforced with spinel MgAl{sub 2}O{sub 4}-SiC core-shell microcomposites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Subhash; Pal, Kaushik, E-mail: pl_kshk@yaho

Interface between ceramic particulate and matrix is known to control the response of the materials and functionality of the composite. Among numerous physical properties, grain structure of the materials has also played a significant role in defining the behaviour of metal matrix composites. Usually, silicon carbide (SiC) particles show poor interfacial wettability in aluminium melt. Herein, we were successfully synthesized magnesium oxide (MgO) and nanocrystalline magnesium aluminate (MgAl{sub 2}O{sub 4}) spinel coated silicon carbide (SiC) core-shell micro-composites through sol-gel technique to improve the wettability of dispersoids. Core-shell structures of submicron size were thoroughly investigated by various characterization techniques. Further, aluminiummore » matrix composites incorporated with pristine SiC, MgO grafted SiC and MgAl{sub 2}O{sub 4} grafted SiC particles were fabricated by stir casting technique, respectively. Additionally, as-cast composites were processed via friction stir processing (FSP) technique to observe the influence of grain refinement on mechanical and damping properties. Electron back scattered diffraction (EBSD), Field emission scanning electron microscopy (FE-SEM) and X-ray energy dispersion spectroscopy (EDX) analysis were conducted for investigating grain size refinement, adequate dispersion, stability and de-agglomeration of encapsulated SiC particles in aluminium matrix. The mechanical as well as thermal cyclic (from − 100 to 400 °C) damping performance of the as-cast and friction stir processed composites were studied, respectively. Finally, the enhanced properties were attributable to reduced agglomeration, stabilization and proper dispersion of the tailored SiC particles Al matrix. - Highlights: •Synthesizing a novel coating layer of MgO and MgAl{sub 2}O{sub 4} spinel onto SiC particles •Significant improvement in UTS and hardness by reinforcing tailored SiC in Al •Significant grain refinements were obtained through FSP •SiC/MgAl{sub 2}O{sub 4}/Al exhibits ~ 61% higher storage modulus as compare to pure Al after FSP.« less

Measurements of weak interactions between truncated substrates and a hammerhead ribozyme by competitive kinetic analyses: implications for the design of new and efficient ribozymes with high sequence specificity

PubMed Central

Kasai, Yasuhiro; Shizuku, Hideki; Takagi, Yasuomi; Warashina, Masaki; Taira, Kazunari

2002-01-01

Exploitation of ribozymes in a practical setting requires high catalytic activity and strong specificity. The hammerhead ribozyme R32 has considerable potential in this regard since it has very high catalytic activity. In this study, we have examined how R32 recognizes and cleaves a specific substrate, focusing on the mechanism behind the specificity. Comparing rates of cleavage of a substrate in a mixture that included the correct substrate and various substrates with point mutations, we found that R32 cleaved the correct substrate specifically and at a high rate. To clarify the source of this strong specificity, we quantified the weak interactions between R32 and various truncated substrates, using truncated substrates as competitive inhibitors since they were not readily cleaved during kinetic measurements of cleavage of the correct substrate, S11. We found that the strong specificity of the cleavage reaction was due to a closed form of R32 with a hairpin structure. The self-complementary structure within R32 enabled the ribozyme to discriminate between the correct substrate and a mismatched substrate. Since this hairpin motif did not increase the Km (it did not inhibit the binding interaction) or decrease the kcat (it did not decrease the cleavage rate), this kind of hairpin structure might be useful for the design of new ribozymes with strong specificity and high activity. PMID:12034825

Pseudocapacitance of TiO2-x /CNT Anodes for High-Performance Quasi-Solid-State Li-Ion and Na-Ion Capacitors.

PubMed

Que, Lan-Fang; Yu, Fu-Da; Wang, Zhen-Bo; Gu, Da-Ming

2018-04-01

It is challenging for flexible solid-state hybrid capacitors to achieve high-energy-high-power densities in both Li-ion and Na-ion systems, and the kinetics discrepancy between the sluggish faradaic anode and the rapid capacitive cathode is the most critical issue needs to be addressed. To improve Li-ion/Na-ion diffusion kinetics, flexible oxygen-deficient TiO 2- x /CNT composite film with ultrafast electron/ion transport network is constructed as self-supported and light-weight anode for a quasi-solid-state hybrid capacitor. It is found that the designed porous yolk-shell structure endows large surface area and provides short diffusion length, the oxygen-deficient composite film can improve electrical conductivity, and enhance ion diffusion kinetic by introducing intercalation pseudocapacitance, therefore resulting in advance electrochemical properties. It exhibits high capacity, excellent rate performance, and long cycle life when utilized as self-supported anodes for Li-ion and Na-ion batteries. When assembled with activated carbon/carbon nanotube (AC/CNT) flexible cathode, using ion conducting gel polymer as the electrolyte, high energy densities of 104 and 109 Wh kg -1 are achieved at 250 W kg -1 in quasi-solid-state Li-ion and Na-ion capacitors (LICs and SICs), respectively. Still, energy densities of 32 and 36 Wh kg -1 can be maintained at high power densities of 5000 W kg -1 in LICs and SICs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A mean-field theory for self-propelled particles interacting by velocity alignment mechanisms

NASA Astrophysics Data System (ADS)

Peruani, F.; Deutsch, A.; Bär, M.

2008-04-01

A mean-field approach (MFA) is proposed for the analysis of orientational order in a two-dimensional system of stochastic self-propelled particles interacting by local velocity alignment mechanism. The treatment is applied to the cases of ferromagnetic (F) and liquid-crystal (LC) alignment. In both cases, MFA yields a second order phase transition for a critical noise strength and a scaling exponent of 1/2 for the respective order parameters. We find that the critical noise amplitude ηc at which orientational order emerges in the LC case is smaller than in the F-alignment case, i.e. ηLC C<ηF C. A comparison with simulations of individual-based models with F- resp. LC-alignment shows that the predictions about the critical behavior and the qualitative relation between the respective critical noise amplitudes are correct.

Silicon Carbide Emitter Turn-Off Thyristor

DOE PAGES

Wang, Jun; Wang, Gangyao; Li, Jun; ...

2008-01-01

A novel MOS-conmore » trolled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  A / cm 2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  W / cm 2 conduction and the 100  W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.« less

SiC Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Wear Behaviour of Al-6061/SiC Metal Matrix Composites

NASA Astrophysics Data System (ADS)

Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

2017-04-01

Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

Transmission Electron Microscopy of Non-Etched Presolar Silicon Carbide

NASA Technical Reports Server (NTRS)

Stroud, Rhonda M.; Nittler, Larry R.; Alexander, Conel M. O'D.; Bernatowicz, Thomas J.; Messenger, Scott R.

2003-01-01

Our solar system formed from nuclei produced in earlier generations of stars. Mixing in the proto-solar nebula isotopically homogenized most of this material, but some grains, called presolar grains, retain their original isotopic composition. The isotopic properties of presolar SiC grains indicate that most of the grains formed in the outflows of carbon-rich Asymptotic Giant Branch (AGB) stars. The microstructure of these presolar grains reflects the conditions of the dust formation and subsequent alteration. Early microstructural studies of SiC grains obtained by acid dissolution from meteorites show that most isotopically anomalous SiC grains have the face-centered cubic b- SiC structure. However, Daulton et al. have shown that a small fraction of sub-micron presolar SiC grains are of the hexagonal 2H polytype (a-SiC). Although the harsh chemical treatments of these grains does not alter their crystal structure, significant alteration of the surface morphology of the grains due to the acid treatments has been observed. In addition, the acid treatments may preferentially remove cracked or fissured grains, and possible sub-grains, such as graphite. By studying SiC grains isolated by physical separation and found in situ, we attempt to obtain a more complete analysis of presolar SiC microstructures, including the surface morphology, in order to address the formation and processing history of the grains. In our prior work, we reported on one in situ SiC grain (hereafter CBIS1). Here we present results from two additional grains, one in situ, and one prepared as a physical separate.

Determinant Product and Supplier Attributes in Domestic Markets for Hardwood Lumber

Treesearch

Robert J. Bush; Steven A. Sinclair; Philip A. Araman

1991-01-01

Product and supplier attributes that are critical in hardwood lumber purchase decisions (i.e., determinant) were investigated in four segments of the domestic market for hardwood lumber: millwork producers (Standard Industrial Classification (SIC) 2431), hardwood dimension and flooring producers (SIC 2426), wood household furniture producers (SIC 2511), and wood...

The Paralinear Oxidation of SiC in Combustion Environments

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Greenbauer-Seng, Leslie (Technical Monitor)

2000-01-01

SiC is proposed for structural applications in high pressure, high temperature. high gas velocity environments of turbine and rocket engines. These environments are typically composed of complex gas mixtures containing carbon dioxide, oxygen, water vapor, and nitrogen. It is known that the primary oxidant for SiC in these environments is water vapor.

Ceramic-Ceramic Composites Meeting in Belgium.

DTIC Science & Technology

1987-08-04

the liquid phase Vidrio , Madrid, Spain) described the use should disappear during the heat treat- of SIC grains as a dispersed phase to ment. The...SiC fiber-reinforced SiO2 glass ma- trix, mullite-zirconia-A120 3-SiC, C-fi- used elastic wave measurements at high ber-reinforced reaction-bonded SiC

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

DOE PAGES

Wang, Fei; Zhang, Zheyu

2016-12-28

This article overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed.

Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique

NASA Astrophysics Data System (ADS)

Zhang, Rui; Chen, Fenghua; Wang, Jinbin; Fu, Dejun

2018-03-01

Here we demonstrate the synthesis of graphene directly on SiC substrates at 900 °C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8 nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16 keV with the dosage of 4 × 1016 atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.

The corrosion behavior of CVI SiC matrix in SiCf/SiC composites under molten fluoride salt environment

NASA Astrophysics Data System (ADS)

Wang, Hongda; Feng, Qian; Wang, Zhen; Zhou, Haijun; Kan, Yanmei; Hu, Jianbao; Dong, Shaoming

2017-04-01

High temperature corrosion behavior and microstructural evolution of designed chemical-vapor-infiltrated SiC matrix in SiC fiber reinforced SiC ceramic matrix composites in 46.5LiF-11.5NaF-42.0KF (mol. %) eutectic salt at 800 °C for various corrosion time was studied. Worse damage was observed as extending the exposure time, with the mass loss ratio increasing from 0.716 wt. % for 50 h to 5.914 wt. % for 500 h. The mass loss rate showed a trend of first decrease and then increase with the extended corrosion exposure. Compared with the near-stoichiometric SiC matrix layers, the O-contained boundaries between deposited matrix layers and the designed Si-rich SiC matrix layers were much less corrosion resistant and preferentially corroded. Liner relationship between the mass loss ratio and the corrosion time obtained from 50 h to 300 h indicated that the corrosion action was reaction-control process. Further corrosion would lead to matrix layer exfoliation and higher mass loss ratio.

Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

2014-10-01

Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

Constructing exact symmetric informationally complete measurements from numerical solutions

NASA Astrophysics Data System (ADS)

Appleby, Marcus; Chien, Tuan-Yow; Flammia, Steven; Waldron, Shayne

2018-04-01

Recently, several intriguing conjectures have been proposed connecting symmetric informationally complete quantum measurements (SIC POVMs, or SICs) and algebraic number theory. These conjectures relate the SICs to their minimal defining algebraic number field. Testing or sharpening these conjectures requires that the SICs are expressed exactly, rather than as numerical approximations. While many exact solutions of SICs have been constructed previously using Gröbner bases, this method has probably been taken as far as is possible with current computer technology (except in special cases where there are additional symmetries). Here, we describe a method for converting high-precision numerical solutions into exact ones using an integer relation algorithm in conjunction with the Galois symmetries of an SIC. Using this method, we have calculated 69 new exact solutions, including nine new dimensions, where previously only numerical solutions were known—which more than triples the number of known exact solutions. In some cases, the solutions require number fields with degrees as high as 12 288. We use these solutions to confirm that they obey the number-theoretic conjectures, and address two questions suggested by the previous work.

High temperature tensile behavior and microstructure of Al-SiC nanocomposite fabricated by mechanical milling and hot extrusion technique

NASA Astrophysics Data System (ADS)

Soltani, Mohammadreza; Atrian, Amir

2018-02-01

This paper investigates the high-temperature tensile behavior of Al-SiC nanocomposite reinforced with 0, 1.5, and 3 vol% SiC nano particles. To fabricate the samples, SiC nano reinforcements and aluminum (Al) powders were milled using an attritor milling and then were cold pressed and hot extruded at 500 °C. Afterward, mechanical and microstructural characteristics were studied in different temperatures. To this end, tensile and compressive tests, micro-hardness test, microscopic examinations, and XRD analysis were performed. The results showed significant improvement of mechanical properties of Al-SiC nanocomposite in room temperature including 40% of ultimate tensile strength (UTS), 36% of ultimate compressive strength (UCS), and 44% of micro-hardness. Moreover, performing tensile tests at elevated temperatures (up to 270 °C) decreased the tensile strength by about 53%, 46%, and 45% for Al-0 vol% SiC, Al-1.5 vol% SiC, and Al-3 vol% SiC, respectively. This temperature rise also enhanced the elongation by about 11% and 133% for non-reinforced Al and Al-3 vol% SiC, respectively.

Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

NASA Astrophysics Data System (ADS)

Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

2016-09-01

High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

NASA Astrophysics Data System (ADS)

Li, M.; Cheng, Y.; Zheng, Y. F.; Zhang, X.; Xi, T. F.; Wei, S. C.

2012-01-01

Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 ± 1 °C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

Structure/function implications in a dynamic complex of the intrinsically disordered Sic1 with the Cdc4 subunit of an SCF ubiquitin ligase

PubMed Central

Mittag, Tanja; Marsh, Joseph; Grishaev, Alexander; Orlicky, Stephen; Lin, Hong; Sicheri, Frank; Tyers, Mike; Forman-Kay, Julie D.

2010-01-01

Summary Intrinsically disordered proteins can form highly dynamic complexes with partner proteins. One such dynamic complex involves the intrinsically disordered Sic1 with its partner Cdc4 in regulation of yeast cell cycle progression. Phosphorylation of six N-terminal Sic1 sites leads to equilibrium engagement of each phosphorylation site with the primary binding pocket in Cdc4, the substrate recognition subunit of a ubiquitin ligase. ENSEMBLE calculations utilizing experimental NMR and small-angle x-ray scattering data reveal significant transient structure in both phosphorylation states of the isolated ensembles (Sic1 and pSic1) that modulates their electrostatic potential, suggesting a structural basis for the proposed strong contribution of electrostatics to binding. A structural model of the dynamic pSic1-Cdc4 complex demonstrates the spatial arrangements in the ubiquitin ligase complex. These results provide a physical picture of a protein that is predominantly disordered in both its free and bound states, enabling aspects of its structure/function relationship to be elucidated. PMID:20399186

Lightweight composite reflectors for space optics

NASA Astrophysics Data System (ADS)

Williams, Brian E.; McNeal, Shawn R.; Ono, Russell M.

1998-01-01

The primary goal of this work was to advance the state of the art in lightweight, high optical quality reflectors for space- and Earth-based telescopes. This was accomplished through the combination of a precision silicon carbide (SiC) reflector surface and a high specific strength, low-mass SiC structural support. Reducing the mass of components launched into space can lead to substantial cost savings, but an even greater benefit of lightweight reflectors for both space- and Earth-based optics applications is the fact that they require far less complex and less expensive positioning systems. While Ultramet is not the first company to produce SiC by chemical vapor deposition (CVD) for reflector surfaces, it is the first to propose and demonstrate a lightweight, open-cell SiC structural foam that can support a thin layer of the highly desirable polished SiC reflector material. SiC foam provides a substantial structural and mass advantage over conventional honeycomb supports and alternative finned structures. The result is a reflector component that meets or exceeds the optical properties of current high-quality glass, ceramic, and metal reflectors while maintaining a substantially lower areal density.

Pore Formation Process of Porous Ti3SiC2 Fabricated by Reactive Sintering

PubMed Central

Zhang, Huibin; Liu, Xinli; Jiang, Yao

2017-01-01

Porous Ti3SiC2 was fabricated with high purity, 99.4 vol %, through reactive sintering of titanium hydride (TiH2), silicon (Si) and graphite (C) elemental powders. The reaction procedures and the pore structure evolution during the sintering process were systematically studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Our results show that the formation of Ti3SiC2 from TiH2/Si/C powders experienced the following steps: firstly, TiH2 decomposed into Ti; secondly, TiC and Ti5Si3 intermediate phases were generated; finally, Ti3SiC2 was produced through the reaction of TiC, Ti5Si3 and Si. The pores formed in the synthesis procedure of porous Ti3SiC2 ceramics are derived from the following aspects: interstitial pores left during the pressing procedure; pores formed because of the TiH2 decomposition; pores formed through the reactions between Ti and Si and Ti and C powders; and the pores produced accompanying the final phase synthesized during the high temperature sintering process. PMID:28772515

Space sickness on earth

NASA Astrophysics Data System (ADS)

Nooij, S. A. E.; Bos, J. E.; Groen, E. L.; Bles, W.; Ockels, W. J.

2007-09-01

During the first days in space, i.e., after a transition from 1G to 0G, more than 50% of the astro- (and cosmonauts) suffer from the Space Adaptation Syndrome (SAS).The symptoms of SAS, like nausea and dizziness, are especially provoked by head movements. Astronauts have mentioned close similarities between the symptoms of SAS and the symptoms they experienced after a 1 hour centrifuge run on Earth, i.e., after a transition from 3G to 1G (denoted by Sickness Induced by Centrifugation, SIC). During several space missions, we related susceptibility to SAS and to SIC in 11 astronauts and found 4 of them being susceptible to both SIC and SAS, and 7 being not susceptible to SIC nor to SAS. This correspondence in susceptibility suggests that SIC and SAS share the same underlying mechanism. To further study this mechanism, several vestibular parameters have been investigated (e.g. postural stability, vestibularly driven eye movements, subjective vertical). We found some striking changes in individual cases that are possibly due to the centrifuge run. However, the variability between subjects generally is very large, making physiological links to SIC and SAS still hard to find.

Silicon carbide optics for space and ground based astronomical telescopes

NASA Astrophysics Data System (ADS)

Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

2012-09-01

Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamichhane, Ranjan; Ericson, Milton Nance; Frank, Steven Shane

2014-01-01

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz tomore » 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.« less

Reduced-Density-Matrix Description of Decoherence and Relaxation Processes for Electron-Spin Systems

NASA Astrophysics Data System (ADS)

Jacobs, Verne

2017-04-01

Electron-spin systems are investigated using a reduced-density-matrix description. Applications of interest include trapped atomic systems in optical lattices, semiconductor quantum dots, and vacancy defect centers in solids. Complimentary time-domain (equation-of-motion) and frequency-domain (resolvent-operator) formulations are self-consistently developed. The general non-perturbative and non-Markovian formulations provide a fundamental framework for systematic evaluations of corrections to the standard Born (lowest-order-perturbation) and Markov (short-memory-time) approximations. Particular attention is given to decoherence and relaxation processes, as well as spectral-line broadening phenomena, that are induced by interactions with photons, phonons, nuclear spins, and external electric and magnetic fields. These processes are treated either as coherent interactions or as environmental interactions. The environmental interactions are incorporated by means of the general expressions derived for the time-domain and frequency-domain Liouville-space self-energy operators, for which the tetradic-matrix elements are explicitly evaluated in the diagonal-resolvent, lowest-order, and Markov (short-memory time) approximations. Work supported by the Office of Naval Research through the Basic Research Program at The Naval Research Laboratory.

Impulsivity, self-control, and hypnotic suggestibility.

PubMed

Ludwig, V U; Stelzel, C; Krutiak, H; Prunkl, C E; Steimke, R; Paschke, L M; Kathmann, N; Walter, H

2013-06-01

Hypnotic responding might be due to attenuated frontal lobe functioning after the hypnotic induction. Little is known about whether personality traits linked with frontal functioning are associated with responsiveness to hypnotic suggestions. We assessed whether hypnotic suggestibility is related to the traits of self-control and impulsivity in 154 participants who completed the Brief Self-Control Scale, the Self-Regulation Scale, the Barratt Impulsiveness Scale (BIS-11), and the Harvard Group Scale of Hypnotic Susceptibility (HGSHS:A). BIS-11 non-planning impulsivity correlated positively with HGSHS:A (Bonferroni-corrected). Furthermore, in the best model emerging from a stepwise multiple regression, both non-planning impulsivity and self-control positively predicted hypnotic suggestibility, and there was an interaction of BIS-11 motor impulsivity with gender. For men only, motor impulsivity tended to predict hypnotic suggestibility. Hypnotic suggestibility is associated with personality traits linked with frontal functioning, and hypnotic responding in men and women might differ. Copyright © 2013 Elsevier Inc. All rights reserved.

Precursor Selection for Property Optimization in Biomorphic SiC Ceramics

NASA Technical Reports Server (NTRS)

Varela-Feria, F. M.; Lopez-Robledo, M. J.; Martinez-Fernandez, J.; deArellano-Lopez, A. R.; Singh, M.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Biomorphic SiC ceramics have been fabricated using different wood precursors. The evolution of volume, density and microstructure of the woods, carbon performs, and final SiC products are systematically studied in order to establish experimental guidelines that allow materials selection. The wood density is a critical characteristic, which results in a particular final SiC density, and the level of anisotropy in mechanical properties in directions parallel (axial) and perpendicular (radial) to the growth of the wood. The purpose of this work is to explore experimental laws that can help choose a type of wood as precursor for a final SiC product, with a given microstructure, density and level of anisotropy. Preliminary studies of physical properties suggest that not only mechanical properties are strongly anisotropic, but also electrical conductivity and gas permeability, which have great technological importance.

Study on micro-hardness of electroless composite plating of Ni-P with SiC Nano-particles

NASA Astrophysics Data System (ADS)

Sun, Yong; Zhang, Zhaoguo; Li, Jiamin; Xu, Donghui

2007-07-01

In this paper, a Ni-P electroless composite coating containing nano SiC particles was produced. The wearability of the composite coating was studied. Temperature, PH of the plating liquid and the concentration of SiC nanoparticles in the plating liquid were taken as parameters and the experiment with three factors and five levels was designed through the method of quadratic orthogonal rotation combination. SiC nanoparticles were dispersed by ultrasonic. The influence of the testing parameters on the hardness of the coating was studied intensively. The optimal parameters were obtained when the temperature is 86+/-1°C, PH is 6+/-0.5 and the concentration of SiC nanoparticles is 6g/L. The maximal hardness of the coating is over 1700HV after heat treatment.

Electrospinning β-SiC fibers from SiC nanoparticles dispersed in various polymer solutions as the electrospinning agents

NASA Astrophysics Data System (ADS)

Fuad, A.; Fatriani, N.; Yogihati, C. I.; Taufiq, A.; Latifah, E.

2018-04-01

Silicon carbide (SiC) fibers were synthesized by electrospinning method from SiC nanoparticles dispersed in polymer solutions, i.e., polyethylene glycol (PEG) and polyvinyl alcohol (PVA). The SiC nanoparticle used in this research was synthesized from sucrose and natural silica via a sonochemical method. The natural silica was extracted from local pyrophyllite by a sol-gel method. The characterization was performed via x-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM). The XRD characterization results showed that the sample possessed a β-SiC phase and formed a cubic-structured crystal with a lattice parameter of a = b = c = 4.3448 Å. The use of PEG and PVA in the electrospinning process resulted in fractal and fiber structured SiC, respectively.

Behavior of ceramics at 1200 C in a simulated gas turbine environment

NASA Technical Reports Server (NTRS)

Sanders, W. A.; Probst, H. B.

1974-01-01

This report summarizes programs at the NASA Lewis Research Center evaluating several classes of commercial ceramics, in a high gas velocity burner rig simulating a gas turbine engine environment. Testing of 23 ceramics in rod geometry identified SiC and Si3N4 as outstanding in resistance to oxidation and thermal stress and identified the failure modes of other ceramics. Further testing of a group of 15 types of SiC and Si3N4 in simulated vane shape geometry has identified a hot pressed SiC, a reaction sintered SiC, and hot pressed Si3N4 as the best of that group. SiC and Si3N4 test specimens were compared on the basis of weight change, dimensional reductions, metallography, fluorescent penetrant inspection, X-ray diffraction analyses, and failure mode.

Microstructure, hardness and modulus of carbon-ion-irradiated new SiC fiber (601-4)

NASA Astrophysics Data System (ADS)

Huang, Qing; Lei, Guanhong; Liu, Renduo; Li, Jianjian; Yan, Long; Li, Cheng; Liu, Weihua; Wang, Mouhua

2018-05-01

Two types of SiC fibers, one is low-oxygen and carbon-rich fiber denoted by 601-4 and the other is low-oxygen and near-stoichiometric Tyranno SA, were irradiated with 450 keV C+ ions at room temperature. The Raman spectra indicate that irradiation induced distortion and amorphization of SiC crystallites in fibers. TEM characterization of Tyranno SA suggests that SiC crystallites undergo a continued fragmentation into smaller crystalline islands and a continued increase of surrounding amorphous structure. The SiC nano-crystallites (<15 nm) in 601-4 fiber are more likely to be amorphized than larger crystallites (∼200 nm) in Tyranno SA. The hardness and modulus of 601-4 continuously decreases with increasing fluence, while that of Tyranno SA first increases and then decreases.

Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC composites

NASA Technical Reports Server (NTRS)

Lightfoot, A.; Sheldon, B. W.; Flint, J. H.; Haggerty, J. S.

1989-01-01

The nitriding kinetics of Si and Si plus SiC powder mixtures were studied to simulate the fabrication of RBSN-SiC ceramic matrix composites. Very clean, assynthesized, and solvent-exposed powders were studied; C-rich and Si-rich SiC 0.04-0.05 micron diameter powders were mixed in varying concentrations with SiH4-derived 0.2-0.3 micron diameter Si powder. Complete nitridation is achieved with C-rich SiC powders in 140 min at 1250 C, and in the centers of Si-rich SiC powders in 15 min. The effects on the incubation periods, fast reaction periods, and slow reaction periods that characterize these nitriding processes were studied to explain unusual reverse reaction gradients and other effects of contamination.

M3FT-16OR020202112 - Report on viability of hydrothermal corrosion resistant SiC/SiC Joint development

DOE Office of Scientific and Technical Information (OSTI.GOV)

Katoh, Yutai; Koyanagi, Takaaki; Kiggans Jr, James O.

2016-06-30

Hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under PWR and BWR relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti-Si-C system, and SiC nanopowder sintering. Most of the formed joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession rate of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing activity environments. The SiC nanopowder sinteredmore » joint was the most corrosion tolerant under the oxidizing activity environment among the four joints.« less

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

Irradiation resistance of silicon carbide joint at light water reactor–relevant temperature

DOE PAGES

Koyanagi, T.; Katoh, Y.; Kiggans, J. O.; ...

2017-03-10

We fabricated and irradiated monolithic silicon carbide (SiC) to SiC plate joints with neutrons at 270–310 °C to 8.7 dpa for SiC. The joining methods included solid state diffusion bonding using titanium and molybdenum interlayers, SiC nanopowder sintering, reaction sintering with a Ti-Si-C system, and hybrid processing of polymer pyrolysis and chemical vapor infiltration (CVI). All the irradiated joints exhibited apparent shear strength of more than 84 MPa on average. Significant irradiation-induced cracking was found in the bonding layers of the Ti and Mo diffusion bonds and Ti-Si-C reaction sintered bond. Furthermore, the SiC-based bonding layers of the SiC nanopowdermore » sintered and hybrid polymer pyrolysis and CVI joints all showed stable microstructure following the irradiation.« less