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Sample records for semiconducting nanotube junction

  1. Metallic Electrode: Semiconducting Nanotube Junction Model

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryon (Technical Monitor)

    2001-01-01

    A model is proposed for two observed current-voltage (I-V) patterns in an experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 ('97)]. We claim that there are two contact modes for a tip (metal) -nanotube semi conductor) junction depending whether the alignment of the metal and semiconductor band structure is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this picture to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor (Zhou et al., Appl. Phys. Lett. 76, 1597 ('00)], and show that two independent metal-semiconductor junctions connected in series are responsible for the observed behavior.

  2. A Comparison of Photocurrent Mechanisms in Quasi-Metallic and Semiconducting Carbon Nanotube pn-Junctions.

    PubMed

    Chang, Shun-Wen; Hazra, Jubin; Amer, Moh; Kapadia, Rehan; Cronin, Stephen B

    2015-12-22

    We present a comparative study of quasi-metallic (Eg ∼ 100 meV) and semiconducting (Eg ∼ 1 eV) suspended carbon nanotube pn-junctions introduced by electrostatic gating. While the built-in fields of the quasi-metallic carbon nanotubes (CNTs) are 1-2 orders of magnitude smaller than those of the semiconducting CNTs, their photocurrent is 2 orders of magnitude higher than the corresponding semiconducting CNT devices under the same experimental conditions. Here, the large exciton binding energy in semiconducting nanotubes (∼400 meV) makes it difficult for excitons to dissociate into free carriers that can contribute to an externally measured photocurent. As such, semiconducting nanotubes require a phonon to assist in the exciton dissociation process, in order to produce a finite photocurrent, while quasi-metallic nanotubes do not. The quasi-metallic nanotubes have much lower exciton binding energies (∼50 meV) as well as a continuum of electronic states to decay into and, therefore, do not require the absorption of a phonon in order to dissociate, making it much easier for these excitons to produce a photocurrent. We performed detailed simulations of the band energies in quasi-metallic and semiconducting nanotube devices in order to obtain the electric field profiles along the lengths of the nanotubes. These simulations predict maximum built-in electric field strengths of 2.3 V/μm for semiconducting and 0.032-0.22 V/μm for quasi-metallic nanotubes under the applied gate voltages used in this study.

  3. Nanotube junctions

    DOEpatents

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon; Zettl, Alexander Karlwalte

    2004-12-28

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  4. Nanotube junctions

    DOEpatents

    Crespi, Vincent Henry; Cohen, Marvin Lou; Louie, Steven Gwon Sheng; Zettl, Alexander Karlwalter

    2003-01-01

    The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

  5. Superconducting proximity effect in superconductor / semiconducting-carbon-nanotube / superconductor junctions.

    NASA Astrophysics Data System (ADS)

    Barbara, Paola

    2005-03-01

    We measure the proximity effect in devices made of two superconducting electrodes bridged by a 3-micrometer long semiconducting carbon nanotube. The electrodes are made of a Pd/Nb bilayer and the junctions are fabricated by using standard photolithography [1]. The superconducting proximity effect manifests itself with a peak in the low-bias differential conductance due to Andreev reflection at the superconductor/carbon nanotube interfaces. Application of a gate voltage allows the transparency of the junction to be tuned from high (Andreev reflection) to low (tunneling) [2]. We have studied the temperature dependence of the features in each regime. This work is supported by the NSF (DMR-0239721) and by the Research Corporation. [1] A. Tselev, K. Hatton, M. S. Fuhrer, M. Paranjape and P. Barbara, Nanotechnology 15, 1475 (2004). [2] A. F. Morpurgo, J. Kong, C. M. Marcus, and H. Dai, Science 286, 263 (1999).

  6. Modeling of Schottky Barrier Modulation due to Oxidation at Metallic Electrode and Semiconducting Carbon Nanotube Junction

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2003-01-01

    A model is proposed for the previously reported lower Schottky barrier for holes PHI (sub bH) in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. We assume that there is a transition region between the electrode and the CNT, and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules on the CNT, leading to lower PHI(sub Bh) after oxidation. The mechanism prevails in both p- and n-CNTs, and the model consistently explains the key experimental findings.

  7. Photocurrent generation in semiconducting and metallic carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Barkelid, Maria; Zwiller, Val

    2014-01-01

    The fundamental mechanism underlying photocurrent generation in carbon nanotubes has long been an open question. In photocurrent generation, the temperature of the photoexcited charge carriers determines the transport regime by which the electrons and holes are conducted through the nanotube. Here, we identify two different photocurrent mechanisms for metallic and semiconducting carbon nanotube devices with induced p-n junctions. Our photocurrent measurements as a function of charge carrier doping demonstrate a thermal origin for metallic nanotubes, where photo-excited hot carriers give rise to a current. For semiconducting nanotubes we demonstrate a photovoltaic mechanism, where a built-in electric field results in electron-hole separation. Our results provide an understanding of the photoresponse in carbon nanotubes, which is not only of fundamental interest but also of importance for designing carbon-based, high-efficiency photodetectors and energy-harvesting devices.

  8. Process for separating metallic from semiconducting single-walled carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Sun, Ya-Ping (Inventor)

    2008-01-01

    A method for separating semiconducting single-walled carbon nanotubes from metallic single-walled carbon nanotubes is disclosed. The method utilizes separation agents that preferentially associate with semiconducting nanotubes due to the electrical nature of the nanotubes. The separation agents are those that have a planar orientation, .pi.-electrons available for association with the surface of the nanotubes, and also include a soluble portion of the molecule. Following preferential association of the separation agent with the semiconducting nanotubes, the agent/nanotubes complex is soluble and can be solubilized with the solution enriched in semiconducting nanotubes while the residual solid is enriched in metallic nanotubes.

  9. Switching and Rectification in Carbon-Nanotube Junctions

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Andriotis, Antonis N.; Menon, Madhu; Chernozatonskii, Leonid

    2003-01-01

    Multi-terminal carbon-nanotube junctions are under investigation as candidate components of nanoscale electronic devices and circuits. Three-terminal "Y" junctions of carbon nanotubes (see Figure 1) have proven to be especially interesting because (1) it is now possible to synthesize them in high yield in a controlled manner and (2) results of preliminary experimental and theoretical studies suggest that such junctions could exhibit switching and rectification properties. Following the preliminary studies, current-versus-voltage characteristics of a number of different "Y" junctions of single-wall carbon nanotubes connected to metal wires were computed. Both semiconducting and metallic nanotubes of various chiralities were considered. Most of the junctions considered were symmetric. These computations involved modeling of the quantum electrical conductivity of the carbon nanotubes and junctions, taking account of such complicating factors as the topological defects (pentagons, heptagons, and octagons) present in the hexagonal molecular structures at the junctions, and the effects of the nanotube/wire interfaces. A major component of the computational approach was the use of an efficient Green s function embedding scheme. The results of these computations showed that symmetric junctions could be expected to support both rectification and switching. The results also showed that rectification and switching properties of a junction could be expected to depend strongly on its symmetry and, to a lesser degree, on the chirality of the nanotubes. In particular, it was found that a zigzag nanotube branching at a symmetric "Y" junction could exhibit either perfect rectification or partial rectification (asymmetric current-versus-voltage characteristic, as in the example of Figure 2). It was also found that an asymmetric "Y" junction would not exhibit rectification.

  10. Electronic Properties of Carbon Nanotubes and Junctions

    NASA Technical Reports Server (NTRS)

    Anantram, M. P.; Han, Jie; Yang, Liu; Govindan, T. R.; Jaffe, R.; Saini, Subhash (Technical Monitor)

    1998-01-01

    Metallic and semiconducting Single Wall Carbon Nanotubes (CNT) have recently been characterized using scanning tunneling microscopy (STM) and the manipulation of individual CNT has been demonstrated. These developments make the prospect of using CNT as molecular wires and possibly as electronic devices an even more interesting one. We have been modeling various electronic properties such as the density of states and the transmission coefficient of CNT wires and junctions. These studies involve first calculating the stability of junctions using molecular dynamics simulations and then calculating the electronic properties using a pi-electron tight binding Hamiltonian. We have developed the expertise to calculate the electronic properties of both finite-sized CNT and CNT systems with semi-infinite boundary conditions. In this poster, we will present an overview of some of our results. The electronic application of CNT that is most promising at this time is their use as molecular wires. The conductance can however be greatly reduced because of reflection due to defects and contacts. We have modeled the transmission through CNT in the presence of two types of defects: weak uniform disorder and strong isolated scatterers. We find that the conductance is affected in significantly different manners due to these defects Junctions of CNT have also been imaged using STM. This makes it essential to derive rules for the formation of junctions between tubes of different chirality, study their relative energies and electronic properties. We have generalized the rules for connecting two different CNT and have calculated the transmission and density of states through CNT junctions. Metallic and semiconducting CNT can be joined to form a stable junction and their current versus voltage characteristics are asymmetric. CNT are deformed by the application of external forces including interactions with a substrate or other CNT. In many experiments, these deformation are expected to

  11. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

    PubMed Central

    2016-01-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  12. Electrospun Composite Nanofibers of Semiconductive Polymers for Coaxial PN Junctions

    NASA Astrophysics Data System (ADS)

    Serrano, William; Thomas, Sylvia

    The objective of this research is to investigate the conditions under P3HT and Activink, semiconducting polymers, form 1 dimension (1D) coaxial p-n junctions and to characterize their behavior in the presence of UV radiation and organic gases. For the first time, fabrication and characterization of semiconductor polymeric single fiber coaxial arrangements will be studied. Electrospinning, a low cost, fast and reliable method, with a coaxial syringe arrangement will be used to fabricate these fibers. With the formation of fiber coaxial arrangements, there will be investigations of dimensionality crossovers e.g., from one-dimensional (1D) to two-dimensional (2D). Coaxial core/shell fibers have been realized as seen in a recent publication on an electrospun nanofiber p-n heterojunction of oxides (BiFeO3 and TiO2, respectively) using the electrospinning technique with hydrothermal method. In regards to organic semiconducting coaxial p-n junction nanofibers, no reported studies have been conducted, making this study fundamental and essential for organic semiconducting nano devices for flexible electronics and multi-dimensional integrated circuits.

  13. Proposed strategy to sort semiconducting nanotubes by band-gap

    NASA Astrophysics Data System (ADS)

    Narayan, V.

    2007-01-01

    We propose a strategy that uses a tunable infra-red source and an alternating non-linear potential defined by an electrode to sort a suspension of assorted semiconducting nanotubes. The band-gap scales with the inverse of the nanotube diameter, hence the infra-red frequency can be tuned to create excitons in some of the nanotubes; these excitons will be polarized by the potential. Since, a polarized exciton is a dipole, the excited nanotubes will experience a net force and may then diffuse towards the electrode, unlike the other nanotubes. We discuss experimental parameters such as IR intensity, electrode design, and potential frequency for a pilot experiment to sort nanotubes with lengths ≈0.5 μm. The basic physics of the system has been illustrated using a Hartree model applied to nanotubes with nanoscale lengths. The calculated exciton binding energy suddenly drops to zero and the force on the nanotube increases dramatically when the exciton disassociates as the nanotube moves towards the electrode. The quantum adiabatic theorem shows that excitons will be adiabatically polarized for potential frequencies typical for experiments ≈1-10 MHz. The analysis indicates that the manipulation of nanotubes with nanometer lengths requires nanoscale electrodes.

  14. Semi-conducting carbon nanotube as variable capacitor

    NASA Astrophysics Data System (ADS)

    Ozmaian, M.; Naghdabadi, R.

    2013-12-01

    This paper proposes a novel, one-part, variable capacitor, using semi-conducting carbon nanotube (CNT). This variable capacitor works based on the change in the electronic structure of CNTs under applied voltage and deformations. Positive and negative charges are stored at both ends of a non-zero band gap nanotube which works as metallic electrodes in parallel plate capacitors. Also the neutral strip in the middle acts as the dielectric part of a conventional capacitor under the influence of an external electric field. Mechanical strains on carbon nanotube change its band gap energy and thus the length of neutral strip and charged regions. The lengths of these parts are primarily dependent on the nanotube chirality, deformation mode and applied voltage. This way, different parts of a conventional cantilever, parallel plate or bridge capacitor are reduced to a one part semi-conducting CNT capacitor. Analytical calculations based on classical electrostatics and density of states (DOS) relations are employed to investigate the effect of CNTs geometry, applied voltage and deformations on capacitive features. The proposed CNT-variable-capacitor can be useful for nano-electromechanical systems (NEMS), including displacement measurement sensors and tunable capacitor in integrated circuits.

  15. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui-Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong-Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-01

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. These findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  16. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    NASA Astrophysics Data System (ADS)

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui-Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; Kim, Yong-Hyun; Blackburn, Jeffrey L.; Ferguson, Andrew J.

    2016-04-01

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m‑1 K‑2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate that phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. These findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.

  17. Tailored semiconducting carbon nanotube networks with enhanced thermoelectric properties

    DOE PAGES

    Avery, Azure D.; Zhou, Ben H.; Lee, Jounghee; Lee, Eui -Sup; Miller, Elisa M.; Ihly, Rachelle; Wesenberg, Devin; Mistry, Kevin S.; Guillot, Sarah L.; Zink, Barry L.; et al

    2016-04-04

    Thermoelectric power generation, allowing recovery of part of the energy wasted as heat, is emerging as an important component of renewable energy and energy efficiency portfolios. Although inorganic semiconductors have traditionally been employed in thermoelectric applications, organic semiconductors garner increasing attention as versatile thermoelectric materials. Here we present a combined theoretical and experimental study suggesting that semiconducting single-walled carbon nanotubes with carefully controlled chirality distribution and carrier density are capable of large thermoelectric power factors, higher than 340 μW m-1 K-2, comparable to the best-performing conducting polymers and larger than previously observed for carbon nanotube films. Furthermore, we demonstrate thatmore » phonons are the dominant source of thermal conductivity in the networks, and that our carrier doping process significantly reduces the thermal conductivity relative to undoped networks. As a result, these findings provide the scientific underpinning for improved functional organic thermoelectric composites with carbon nanotube inclusions.« less

  18. Exciton Dynamics in Semiconducting Carbon Nanotubes

    SciTech Connect

    Graham, Matt; Chmeliov, Javgenij; Ma, Yingzhong; Shinohara, Nori; Green, Alexander A.; Hersam, Mark C.; Valkunas, Leonas; Fleming, Graham

    2010-01-01

    We report femtosecond transient absorption spectroscopic study on the (6, 5) single-walled carbon nanotubes and the (7, 5) inner tubes of a dominant double-walled carbon nanotube species. We found that the dynamics of exciton relaxation probed at the first transition-allowed state (E11) of a given tube type exhibits a markedly slower decay when the second transition-allowed state (E22) is excited than that measured by exciting its first transition-allowed state (E11). A linear intensity dependence of the maximal amplitude of the transient absorption signal is found for the E22 excitation, whereas the corresponding amplitude scales linearly with the square root of the E11 excitation intensity. Theoretical modeling of these experimental findings was performed by developing a continuum model and a stochastic model with explicit consideration of the annihilation of coherent excitons. Our detailed numerical simulations show that both models can reproduce reasonably well the initial portion of decay kinetics measured upon the E22 and E11 excitation of the chosen tube species, but the stochastic model gives qualitatively better agreement with the intensity dependence observed experimentally than those obtained with the continuum model.

  19. Octagonal Defects at Carbon Nanotube Junctions

    PubMed Central

    Jaskólski, W.; Pelc, M.; Chico, Leonor; Ayuela, A.

    2013-01-01

    We investigate knee-shaped junctions of semiconductor zigzag carbon nanotubes. Two dissimilar octagons appear at such junctions; one of them can reconstruct into a pair of pentagons. The junction with two octagons presents two degenerate localized states at Fermi energy (EF). The reconstructed junction has only one state near EF, indicating that these localized states are related to the octagonal defects. The inclusion of Coulomb interaction splits the localized states in the junction with two octagons, yielding an antiferromagnetic system. PMID:24089604

  20. Violation of the condon approximation in semiconducting carbon nanotubes.

    PubMed

    Duque, Juan G; Chen, Hang; Swan, Anna K; Shreve, Andrew P; Kilina, Svetlana; Tretiak, Sergei; Tu, Xiaomin; Zheng, Ming; Doorn, Stephen K

    2011-06-28

    The Condon approximation is widely applied in molecular and condensed matter spectroscopy and states that electronic transition dipoles are independent of nuclear positions. This approximation is related to the Franck-Condon principle, which in its simplest form holds that electronic transitions are instantaneous on the time scale of nuclear motion. The Condon approximation leads to a long-held assumption in Raman spectroscopy of carbon nanotubes: intensities arising from resonance with incident and scattered photons are equal. Direct testing of this assumption has not been possible due to the lack of homogeneous populations of specific carbon nanotube chiralities. Here, we present the first complete Raman excitation profiles (REPs) for the nanotube G band for 10 pure semiconducting chiralities. In contrast to expectations, a strong asymmetry is observed in the REPs for all chiralities, with the scattered resonance always appearing weaker than the incident resonance. The observed behavior results from violation of the Condon approximation and originates in changes in the electronic transition dipole due to nuclear motion (non-Condon effect), as confirmed by our quantum chemical calculations. The agreement of our calculations with the experimental REP asymmetries and observed trends in family dependence indicates the behavior is intrinsic. PMID:21612303

  1. Formation of single-walled carbon nanotube thin films enriched with semiconducting nanotubes and their application in photoelectrochemical devices.

    PubMed

    Wei, Li; Tezuka, Noriyasu; Umeyama, Tomokazu; Imahori, Hiroshi; Chen, Yuan

    2011-04-01

    Single-walled carbon nanotube (SWCNT) thin films, containing a high-density of semiconducting nanotubes, were obtained by a gel-centrifugation method. The agarose gel concentration and centrifugation force were optimized to achieve high semiconducting and metallic nanotube separation efficiency at 0.1 wt% agarose gel and 18,000g. The thickness of SWCNT films can be precisely controlled from 65 to 260 nm with adjustable transparency. These SWCNT films were applied in photoelectrochemical devices. Photocurrents generated by semiconducting SWCNT enriched films are 15-35% higher than those by unsorted SWCNT films. This is because of reducing exciton recombination channels as a result of the removal of metallic nanotubes. Thinner films generate higher photocurrents because charge carriers have less chances going in metallic nanotubes for recombination, before they can reach electrodes. Developing more scalable and selective methods for high purity semiconducting SWCNTs is important to further improve the photocurrent generation efficiency by using SWCNT-based photoelectrochemical devices.

  2. Preferential syntheses of semiconducting vertically aligned single-walled carbon nanotubes for direct use in FETs.

    PubMed

    Qu, Liangti; Du, Feng; Dai, Liming

    2008-09-01

    We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation. PMID:18665651

  3. Transport Modeling for Metallic Electrode: Semiconducting Nanotube Systems

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Recently, current-voltage (I-V) characteristics have been reported by Collins et al. for a system with a scanning tunneling microscope (STM) tip and a carbon nanotube. The STM tip was driven forward into a film of many entangled nanotubes on a substrate, and then was retracted, so that one of nanotubes bridged the STM and the film. I-V characteristics had two different patterns for different heights. One showed large dI/ dV with V greater than 0, small dI/dV with V less than 0, and I = 0 near V = 0 (type-I), while the other showed rectification, i.e., I does not equal 0 only with V less than 0 (type-II), with the tip grounded. We propose a physical mechanism to explain the observed I-V patterns. We consider that the observed characteristics strongly reflected the nature of the tip (metal) - nanotube (semiconductor) contact. The other end of the nanotube was entangled well in the film, and simply provided a good Ohmic contact. We will argue that there are two different contact modes: vacuum gap and touching modes, depending on the presence or absence of a tiny vacuum gap d approx. 0.1 - 0.2 nm at the junction. These modes may be related to physisorption and chemisorption, respectively. Once admitting their existence, it is naturally shown that I-V characteristics are type-I in the vacuum gap mode, and type-II in the touching mode. We argue that the nanotube had to be an n-type semiconductor judging from the I-V characteristics, contrary to often observed p-type in the transistor applications, where p-type is probably due to the oxidation in air or the trapped charges in the silicon dioxide. Additional information is contained in the original extended abstract.

  4. Below-gap excitation of semiconducting single-wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Soavi, G.; Grupp, A.; Budweg, A.; Scotognella, F.; Hefner, T.; Hertel, T.; Lanzani, G.; Leitenstorfer, A.; Cerullo, G.; Brida, D.

    2015-10-01

    We investigate the optoelectronic properties of the semiconducting (6,5) species of single-walled carbon nanotubes by measuring ultrafast transient transmission changes with 20 fs time resolution. We demonstrate that photons with energy below the lowest exciton resonance efficiently lead to linear excitation of electronic states. This finding challenges the established picture of a vanishing optical absorption below the fundamental excitonic resonance. Our result points towards below-gap electronic states as an intrinsic property of semiconducting nanotubes.

  5. Continuous Separation of Metallic and Semiconducting Carbon Nanotubes Using Agarose Gel

    NASA Astrophysics Data System (ADS)

    Tanaka, Takeshi; Urabe, Yasuko; Nishide, Daisuke; Kataura, Hiromichi

    2009-12-01

    We have developed a novel method to separate metallic and semiconducting single-wall carbon nanotubes (SWCNTs) with high purities using agarose gel. When an SWCNTs/sodium dodecyl sulfate (SDS) dispersion was applied to a column containing agarose gel beads, semiconducting SWCNTs were trapped by the beads, while metallic SWCNTs passed through the column. After the semiconducting SWCNTs adsorbed to the beads were eluted with sodium deoxycholate solution, the column could be used for repeated separation. Because this continuous, repeatable separation method is applicable to a low-cost, large-scale process, it should enable the industrial production of metallic and semiconducting SWCNTs.

  6. Uniformly spaced arrays of purely semiconducting carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Falk, Abram; Kumar, Bharat; Tulevski, George; Farmer, Damon; Hannon, James; Han, Shu-Jen

    Patterning uniformly spaced arrays of carbon nanotubes (CNTs) is a key challenge for carbon electronics. Our group adopts a hybrid approach to meeting this goal. We use top-down lithography to pattern trenches on chips. We then use surface-selective chemical monolayers to facilitate the bottom-up assembly of solution-processed CNTs into these trenches. Previously, we showed large-scale integration of CNTs based on this approach, but modifications to this process have been needed in order to improve the yield and decrease the fraction of non-switching devices. Our latest results show a high degree of selectivity, alignment and yield of successfully placed CNTs at a 100 nm pitch. Electrical measurements confirm that these chemically placed CNTs are nearly 100% semiconducting and of similar quality to randomly dispersed ones. I will then discuss our strategies for increasing the CNT density and extending these results from chip- to wafer-scale electronics. email: alfalk@us.ibm.com.

  7. Refoldable Peptide Barrel -- Carbon Nanotube Junctions

    NASA Astrophysics Data System (ADS)

    Titov, Alexey; Wang, Boyang; Kral, Petr

    2008-03-01

    We design hybrid bio-nano-junctions formed by cylindrical peptide structures covalently attached to carbon nanotubes. The cylinders are composed of 5 pairs of antiparallel peptide strands that are ``one-to-one'' matched and covalently bonded through ester and amide bonds to the terminal C atoms in two (20,0) carbon nanotubes. The remaining terminal carbons in the CNTs are replaced by nitrogens, forming embedded quinoline-like structures. The used peptide strands are composed of charged amino acids that form cylindrical patterns with preferred stable configurations. By applying a torque to the nanotubes, we can reversibly fold and control the overall structure of the peptide barrels. The junctions might allow the collection and delivery of drugs and activation of biological molecules attached to them.

  8. Separated metallic and semiconducting single-walled carbon nanotubes: opportunities in transparent electrodes and beyond.

    PubMed

    Lu, Fushen; Meziani, Mohammed J; Cao, Li; Sun, Ya-Ping

    2011-04-19

    Ever since the discovery of single-walled carbon nanotubes (SWNTs), there have been many reports and predictions on their superior properties for use in a wide variety of potential applications. However, an SWNT is either metallic or semiconducting; these properties are distinctively different in electrical conductivity and many other aspects. The available bulk-production methods generally yield mixtures of metallic and semiconducting SWNTs, despite continuing efforts in metallicity-selective nanotube growth. Presented here are significant advances and major achievements in the development of postproduction separation methods, which are now capable of harvesting separated metallic and semiconducting SWNTs from different production sources with sufficiently high enrichment and quantities for satisfying at least the needs in research and technological explorations. Opportunities and some available examples for the use of metallic SWNTs in transparent electrodes and semiconducting SWNTs in various device nanotechnologies are highlighted and discussed.

  9. Step-edge faceting and local metallization of a single-wall semiconducting carbon nanotube

    NASA Astrophysics Data System (ADS)

    Clair, Sylvain; Kim, Yousoo; Kawai, Maki

    2011-10-01

    The adsorption of a single-wall carbon nanotube on a well-defined metal surface produces substantial mutual interaction that can lead to strong effects both on the nanotube and on the substrate side. We report two kinds of step faceting on Au(111) and Cu(111). We observed local metallization of a semiconducting nanotube induced by the deformation pressure of crossing a step edge on Cu(111). The origin of this effect is discussed. Our results illustrate the complexity and the large number of situations encountered for the nanotube-on-metal system.

  10. Proximity semiconducting nanowire junctions from Josephson to quantum dot regimes

    NASA Astrophysics Data System (ADS)

    Gharavi, Kaveh; Holloway, Gregory; Baugh, Jonathan

    Experimental low-temperature transport results are presented on proximity-effect Josephson junctions made from low bandgap III-V semiconductor nanowires contacted with Nb. Two regimes are explored in terms of the Nb/nanowire interface transparency t. (i) High t allows a supercurrent to flow across the junction with magnitude Ic, which can be modulated using the voltage Vg on a global back gate or a local gate. Relatively high values are obtained for the figure-of-merit parameter IcRN / (eΔ) ~ 0 . 5 , and t ~ 0 . 75 , where RN is the normal state resistance and Δ the superconducting gap of the Nb leads. With the application of an axial magnetic field, Ic decays but exhibits oscillations before being fully suppressed. The period and amplitude of the oscillations depend on Vg. Possible explanations for this behaviour are presented, including Josephson interference of the orbital subbands in the nanowire. (ii) Lower transparency correlates with a spontaneous quantum dot (QD) formed in the nanowire channel. Pairs of Andreev Bound States (ABS) appear at energies | E | < Δ , with one pair unexpectedly pinned at E = 0 for a wide range of Vg. A description of the QD-ABS system beyond the Anderson model is presented to explain the latter results.

  11. Short Channel Field-Effect-Transistors with Inkjet-Printed Semiconducting Carbon Nanotubes.

    PubMed

    Jang, Seonpil; Kim, Bongjun; Geier, Michael L; Hersam, Mark C; Dodabalapur, Ananth

    2015-11-01

    Short channel field-effect-transistors with inkjet-printed semiconducting carbon nanotubes are fabricated using a novel strategy to minimize material consumption, confining the inkjet droplet into the active channel area. This fabrication approach is compatible with roll-to-roll processing and enables the formation of high-performance short channel device arrays based on inkjet printing. PMID:26312458

  12. Influence of cysteine doping on photoluminescence intensity from semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Kurnosov, N. V.; Leontiev, V. S.; Linnik, A. S.; Karachevtsev, V. A.

    2015-03-01

    Photoluminescence (PL) from semiconducting single-walled carbon nanotubes can be applied for detection of cysteine. It is shown that cysteine doping (from 10-8 to 10-3 M) into aqueous suspension of nanotubes with adsorbed DNA leads to increase of PL intensity. The PL intensity was enhanced by 27% at 10-3 M cysteine concentration in suspension. Most likely, the PL intensity increases due to the passivation of p-defects on the nanotube by the cysteine containing reactive thiol group. The effect of doping with other amino acids without this group (methionine, serine, aspartic acid, lysine, proline) on the PL intensity is essentially weaker.

  13. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution.

    PubMed

    Zhang, Feng; Hou, Peng-Xiang; Liu, Chang; Wang, Bing-Wei; Jiang, Hua; Chen, Mao-Lin; Sun, Dong-Ming; Li, Jin-Cheng; Cong, Hong-Tao; Kauppinen, Esko I; Cheng, Hui-Ming

    2016-01-01

    The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6](3-) precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance.

  14. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

    PubMed Central

    Zhang, Feng; Hou, Peng-Xiang; Liu, Chang; Wang, Bing-Wei; Jiang, Hua; Chen, Mao-Lin; Sun, Dong-Ming; Li, Jin-Cheng; Cong, Hong-Tao; Kauppinen, Esko I.; Cheng, Hui-Ming

    2016-01-01

    The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6]3− precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance. PMID:27025784

  15. Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays.

    PubMed

    Engel, Michael; Small, Joshua P; Steiner, Mathias; Freitag, Marcus; Green, Alexander A; Hersam, Mark C; Avouris, Phaedon

    2008-12-23

    Thin film transistors (TFTs) are now poised to revolutionize the display, sensor, and flexible electronics markets. However, there is a limited choice of channel materials compatible with low-temperature processing. This has inhibited the fabrication of high electrical performance TFTs. Single-walled carbon nanotubes (CNTs) have very high mobilities and can be solution-processed, making thin film CNT-based TFTs a natural direction for exploration. The two main challenges facing CNT-TFTs are the difficulty of placing and aligning CNTs over large areas and low on/off current ratios due to admixture of metallic nanotubes. Here, we report the self-assembly and self-alignment of CNTs from solution into micron-wide strips that form regular arrays of dense and highly aligned CNT films covering the entire chip, which is ideally suitable for device fabrication. The films are formed from pre-separated, 99% purely semiconducting CNTs and, as a result, the CNT-TFTs exhibit simultaneously high drive currents and large on/off current ratios. Moreover, they deliver strong photocurrents and are also both photo- and electroluminescent.

  16. High purity isolation and quantification of semiconducting carbon nanotubes via column chromatography.

    PubMed

    Tulevski, George S; Franklin, Aaron D; Afzali, Ali

    2013-04-23

    The isolation of semiconducting carbon nanotubes (CNTs) to ultrahigh (ppb) purity is a prerequisite for their integration into high-performance electronic devices. Here, a method employing column chromatography is used to isolate semiconducting nanotubes to 99.9% purity. The study finds that by modifying the solution preparation step, both the metallic and semiconducting fraction are resolved and elute using a single surfactant system, allowing for multiple iterations. Iterative processing enables a far more rapid path to achieving the level of purities needed for high performance computing. After a single iteration, the metallic peak in the absorption spectra is completely attenuated. Although absorption spectroscopy is typically used to characterize CNT purity, it is found to be insufficient in quantifying solutions of high purity (>98 to 99%) due to low signal-to-noise in the metallic region of ultrahigh purity solutions. Therefore, a high throughput electrical testing method was developed to quantify the degree of separation by characterizing ∼4000 field-effect transistors fabricated from the separated nanotubes after multiple iterations of the process. The separation and characterization methods described here provide a path to produce the ultrahigh purity semiconducting CNT solutions needed for high performance electronics. PMID:23484490

  17. Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors.

    PubMed

    Li, Shisheng; Liu, Chang; Hou, Peng-Xiang; Sun, Dong-Ming; Cheng, Hui-Ming

    2012-11-27

    Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 °C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of ∼10(3).

  18. Effect of substitutionally boron-doped single-walled semiconducting zigzag carbon nanotubes on ammonia adsorption.

    PubMed

    Vikramaditya, Talapunur; Sumithra, Kanakamma

    2014-03-15

    We investigate the binding of ammonia on intrinsic and substitutionally doped semiconducting single-walled carbon nanotubes (SWCNTs) on the side walls using density functional calculations. Ammonia is found to be weakly physisorbed on intrinsic semiconducting nanotubes while on substitutional doping with boron its affinity is enhanced considerably reflected with increase in binding energies and charge transfer. This is attributed to the strong chemical interaction between electron rich nitrogen of ammonia and electron deficient boron of the doped SWCNT. On doping, the density of states are changed compared to the intrinsic case and additional levels are formed near the Fermi level leading to overlap of levels with that of ammonia indicating charge transfer. The doped SWCNTs thus are expected to be a potential candidate for detecting ammonia.

  19. High Magnetoresistance in Fully Epitaxial Magnetic Tunnel Junctions with a Semiconducting GaOx Tunnel Barrier

    NASA Astrophysics Data System (ADS)

    Matsuo, Norihiro; Doko, Naoki; Takada, Tetsuro; Saito, Hidekazu; Yuasa, Shinji

    2016-09-01

    We fabricate magnetic tunnel junctions with fully epitaxial Fe (001 )/GaOx(001 )/Fe (001 ) structure, where the GaOx is a wide band-gap semiconductor with a cubic spinel-type crystal structure. Tunneling magnetoresistance ratios up to 92% (125%) are observed at room temperature (20 K), which evidently indicates the existence of a spin-polarized coherent tunneling. The observed MR ratio is the highest among the reported magnetic tunnel junctions with a semiconducting tunnel barrier and ferromagnetic metal electrodes. Such a single-crystalline semiconductor tunnel barrier that shows a high MR ratio is an essential building block for a vertical-type spin field-effect transistor.

  20. Switching behavior of semiconducting carbon nanotubes under an external electric field

    NASA Astrophysics Data System (ADS)

    Rochefort, Alain; Di Ventra, Massimiliano; Avouris, Phaedon

    2001-04-01

    We investigate theoretically the switching characteristics of semiconducting carbon nanotubes connected to gold electrodes under an external (gate) electric field. We find that the external introduction of holes is necessary to account for the experimental observations. We identify metal-induced gap states (MIGS) at the contacts and find that the MIGS of an undoped tube would not significantly affect the switching behavior, even for very short tube lengths. We also explore the miniaturization limits of nanotube transistors, and, on the basis of their switching ratio, we conclude that transistors with channels as short as 50 Å would have adequate switching characteristics.

  1. Self-Trapping of Charge Carriers in Semiconducting Carbon Nanotubes: Structural Analysis.

    PubMed

    Adamska, Lyudmyla; Nazin, George V; Doorn, Stephen K; Tretiak, Sergei

    2015-10-01

    The spatial extent of charged electronic states in semiconducting carbon nanotubes with indices (6,5) and (7,6) was evaluated using density functional theory. It was observed that electrons and holes self-trap along the nanotube axis on length scales of about 4 and 8 nm, respectively, which localize cations and anions on comparable length scales. Self-trapping is accompanied by local structural distortions showing periodic bond-length alternation. The average lengthening (shortening) of the bonds for anions (cations) is expected to shift the G-mode frequency to lower (higher) values. The smaller-diameter nanotube has reduced structural relaxation due to higher carbon-carbon bond strain. The reorganization energy due to charge-induced deformations in both nanotubes is found to be in the 30-60 meV range. Our results represent the first theoretical simulation of self-trapping of charge carriers in semiconducting nanotubes, and agree with available experimental data. PMID:26722885

  2. Selective synthesis and device applications of semiconducting single-walled carbon nanotubes using isopropyl alcohol as feedstock.

    PubMed

    Che, Yuchi; Wang, Chuan; Liu, Jia; Liu, Bilu; Lin, Xue; Parker, Jason; Beasley, Cara; Wong, H-S Philip; Zhou, Chongwu

    2012-08-28

    The development of guided chemical vapor deposition (CVD) growth of single-walled carbon nanotubes provides a great platform for wafer-scale integration of aligned nanotubes into circuits and functional electronic systems. However, the coexistence of metallic and semiconducting nanotubes is still a major obstacle for the development of carbon-nanotube-based nanoelectronics. To address this problem, we have developed a method to obtain predominantly semiconducting nanotubes from direct CVD growth. By using isopropyl alcohol (IPA) as the carbon feedstock, a semiconducting nanotube purity of above 90% is achieved, which is unambiguously confirmed by both electrical and micro-Raman measurements. Mass spectrometric study was performed to elucidate the underlying chemical mechanism. Furthermore, high performance thin-film transistors with an on/off ratio above 10(4) and mobility up to 116 cm(2)/(V·s) have been achieved using the IPA-synthesized nanotube networks grown on silicon substrate. The method reported in this contribution is easy to operate and the results are highly reproducible. Therefore, such semiconducting predominated single-walled carbon nanotubes could serve as an important building block for future practical and scalable carbon nanotube electronics.

  3. Electrodynamic and excitonic intertube interactions in semiconducting carbon nanotube aggregates.

    PubMed

    Crochet, Jared J; Sau, Jay D; Duque, Juan G; Doorn, Stephen K; Cohen, Marvin L

    2011-04-26

    The optical properties of selectively aggregated, nearly single chirality single-wall carbon nanotubes were investigated by both continuous-wave and time-resolved spectroscopies. With reduced sample heterogeneities, we have resolved aggregation-dependent reductions of the excitation energy of the S(1) exciton and enhanced electron-hole pair absorption. Photoluminescence spectra revealed a spectral splitting of S(1) and simultaneous reductions of the emission efficiencies and nonradiative decay rates. The observed strong deviations from isolated tube behavior are accounted for by enhanced screening of the intratube Coulomb interactions, intertube exciton tunneling, and diffusion-driven exciton quenching. We also provide evidence that density gradient ultracentrifugation can be used to structurally sort single-wall carbon nanotubes by aggregate size as evident by a monotonic dependence of the aforementioned optical properties on buoyant density.

  4. Modeling of Current-Voltage Characteristics in Large Metal-Semiconducting Carbon Nanotube Systems

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryon A. (Technical Monitor)

    2000-01-01

    A model is proposed for two observed current-voltage (I-V) patterns in recent experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 (1997)]. We claim that there are two contact modes for a tip (metal)-nanotube (semiconductor) junction depending whether the alignment of the metal and the semiconductor band structures is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this model to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor with metallic electrodes at low temperature [Zhou et al., Appl. Phys. Lett. 76, 1597 (2000)], and show that two independent metal-semiconductor junctions in series are responsible for the observed behavior.

  5. Identifiying signatures of photothermal current in a double-gated semiconducting nanotube

    NASA Astrophysics Data System (ADS)

    Buchs, G.; Bagiante, S.; Steele, G. A.

    2014-09-01

    The remarkable electrical and optical properties of single-walled carbon nanotubes have allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards industrial maturity requires a detailed understanding of the fundamental mechanisms governing the process of photocurrent generation. Here we present scanning photocurrent microscopy measurements on a double-gated suspended semiconducting single-walled carbon nanotube and show that both photovoltaic and photothermal mechanisms are relevant for the interpretation of the photocurrent. We find that the dominant or non-dominant character of one or the other processes depends on the doping profile, and that the magnitude of each contribution is strongly influenced by the series resistance from the band alignment with the metal contacts. These results provide new insight into the interpretation of features in scanning photocurrent microscopy and lay the foundation for the understanding of optoelectronic devices made from single-walled carbon nanotubes.

  6. Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle

    NASA Technical Reports Server (NTRS)

    Elkadi, Asmaa; Decrossas, Emmanuel; El-Ghazaly, Samir

    2013-01-01

    The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of electron density for na individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closet neighbors reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.

  7. Energy Band Gap Study of Semiconducting Single Walled Carbon Nanotube Bundle

    NASA Technical Reports Server (NTRS)

    Elkadi, Asmaa; Decrossas, Emmanuel; El-Ghazaly, Samir

    2013-01-01

    The electronic properties of multiple semiconducting single walled carbon nanotubes (s-SWCNTs) considering various distribution inside a bundle are studied. The model derived from the proposed analytical potential function of the electron density for an individual s-SWCNT is general and can be easily applied to multiple nanotubes. This work demonstrates that regardless the number of carbon nanotubes, the strong coupling occurring between the closest neighbours reduces the energy band gap of the bundle by 10%. As expected, the coupling is strongly dependent on the distance separating the s-SWCNTs. In addition, based on the developed model, it is proposed to enhance this coupling effect by applying an electric field across the bundle to significantly reduce the energy band gap of the bundle by 20%.

  8. Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors.

    PubMed

    Schiessl, Stefan P; Fröhlich, Nils; Held, Martin; Gannott, Florentina; Schweiger, Manuel; Forster, Michael; Scherf, Ullrich; Zaumseil, Jana

    2015-01-14

    Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm(2)·V(-1)·s(-1), low ohmic contact resistance, steep subthreshold swings (0.12-0.14 V/dec) and high on/off ratios (10(6)) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

  9. Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

    PubMed Central

    2014-01-01

    Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

  10. Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation

    PubMed Central

    Reis, Wieland G.; Weitz, R. Thomas; Kettner, Michel; Kraus, Alexander; Schwab, Matthias Georg; Tomović, Željko; Krupke, Ralph; Mikhael, Jules

    2016-01-01

    The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production. PMID:27188435

  11. Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation

    NASA Astrophysics Data System (ADS)

    Reis, Wieland G.; Weitz, R. Thomas; Kettner, Michel; Kraus, Alexander; Schwab, Matthias Georg; Tomović, Željko; Krupke, Ralph; Mikhael, Jules

    2016-05-01

    The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production.

  12. Semiconducting polymers with nanocrystallites interconnected via boron-doped carbon nanotubes.

    PubMed

    Yu, Kilho; Lee, Ju Min; Kim, Junghwan; Kim, Geunjin; Kang, Hongkyu; Park, Byoungwook; Ho Kahng, Yung; Kwon, Sooncheol; Lee, Sangchul; Lee, Byoung Hun; Kim, Jehan; Park, Hyung Il; Kim, Sang Ouk; Lee, Kwanghee

    2014-12-10

    Organic semiconductors are key building blocks for future electronic devices that require unprecedented properties of low-weight, flexibility, and portability. However, the low charge-carrier mobility and undesirable processing conditions limit their compatibility with low-cost, flexible, and printable electronics. Here, we present significantly enhanced field-effect mobility (μ(FET)) in semiconducting polymers mixed with boron-doped carbon nanotubes (B-CNTs). In contrast to undoped CNTs, which tend to form undesired aggregates, the B-CNTs exhibit an excellent dispersion in conjugated polymer matrices and improve the charge transport between polymer chains. Consequently, the B-CNT-mixed semiconducting polymers enable the fabrication of high-performance FETs on plastic substrates via a solution process; the μFET of the resulting FETs reaches 7.2 cm(2) V(-1) s(-1), which is the highest value reported for a flexible FET based on a semiconducting polymer. Our approach is applicable to various semiconducting polymers without any additional undesirable processing treatments, indicating its versatility, universality, and potential for high-performance printable electronics. PMID:25372930

  13. Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation.

    PubMed

    Reis, Wieland G; Weitz, R Thomas; Kettner, Michel; Kraus, Alexander; Schwab, Matthias Georg; Tomović, Željko; Krupke, Ralph; Mikhael, Jules

    2016-01-01

    The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (10(5)) and field-effect mobilities (17 cm(2)/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production. PMID:27188435

  14. Double Layer Charging for Conductivity Enhancement of Pure Metallic and Semiconducting Single Wall Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Mayo, Nathanael; Kuznetsov, Alexander; Zakhidov, Anvar

    2011-03-01

    Injecting high electronic charge densities can profoundly change the optical, electrical, and magnetic properties of materials. Evidence suggests a possibility of significantly improving conductivity of carbon nanotubes through double layer charge injection. Double layer charge injection can prove to be a powerful method when applied to carbon nanotubes because of theirs high surface area and chemical stability. Investigation has commenced on the effect of charging on various types of carbon nanotubes, specifically 99% purified single wall semiconducting and single wall metallic tubes. An electrical double layer is electrochemically introduced upon a sheet of carbon nanotubes via application of potential (up to +/- 5 volts) to a sample immersed in ionic-liquid-based electrolyte. Resistance of carbon nanotube as a function of applied charging voltage is recorded to determine the effects of charge injection. Results show that the electrical double layer considerably reduces the resistance across both samples. ESR/LFMA studies combined with low temperature magnetic and transport measurements are conducted to search for charge injection induced superconductivity in carbon nanotubes. Supported by AFOSR grant FA 9550-09-1-0384.

  15. Indentation Tests Reveal Geometry-Regulated Stiffening of Nanotube Junctions.

    PubMed

    Ozden, Sehmus; Yang, Yang; Tiwary, Chandra Sekhar; Bhowmick, Sanjit; Asif, Syed; Penev, Evgeni S; Yakobson, Boris I; Ajayan, Pulickel M

    2016-01-13

    Here we report a unique method to locally determine the mechanical response of individual covalent junctions between carbon nanotubes (CNTs), in various configurations such as "X", "Y", and "Λ"-like. The setup is based on in situ indentation using a picoindenter integrated within a scanning electron microscope. This allows for precise mapping between junction geometry and mechanical behavior and uncovers geometry-regulated junction stiffening. Molecular dynamics simulations reveal that the dominant contribution to the nanoindentation response is due to the CNT walls stretching at the junction. Targeted synthesis of desired junction geometries can therefore provide a "structural alphabet" for construction of macroscopic CNT networks with tunable mechanical response. PMID:26618517

  16. Growth of semiconducting single-walled carbon nanotubes by using ceria as catalyst supports.

    PubMed

    Qin, Xiaojun; Peng, Fei; Yang, Feng; He, Xiaohui; Huang, Huixin; Luo, Da; Yang, Juan; Wang, Sheng; Liu, Haichao; Peng, Lianmao; Li, Yan

    2014-02-12

    The growth of semiconducting single-walled carbon nanotubes (s-SWNTs) on flat substrates is essential for the application of SWNTs in electronic and optoelectronic devices. We developed a flexible strategy to selectively grow s-SWNTs on silicon substrates using a ceria-supported iron or cobalt catalysts. Ceria, which stores active oxygen, plays a crucial role in the selective growth process by inhibiting the formation of metallic SWNTs via oxidation. The so-produced ultralong s-SWNT arrays are immediately ready for building field effect transistors. PMID:24392872

  17. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Comfort, Everett; Lee, Ji Ung

    2016-06-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range.

  18. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes.

    PubMed

    Comfort, Everett; Lee, Ji Ung

    2016-01-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range. PMID:27339272

  19. Large Bandgap Shrinkage from Doping and Dielectric Interface in Semiconducting Carbon Nanotubes

    PubMed Central

    Comfort, Everett; Lee, Ji Ung

    2016-01-01

    The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We demonstrate this in quasi-one-dimensional semiconducting carbon nanotubes. Specifically, we use a four-gated device, configured as a p-n diode, to investigate the fundamental electronic structure of individual, partially supported nanotubes of varying diameter. The four-gated construction allows us to combine both electrical and optical spectroscopic techniques to measure the bandgap over a wide doping range. PMID:27339272

  20. Semiconductive Nanotube Array Constructed from Giant [Pb(II)18I54(I2)9] Wheel Clusters.

    PubMed

    Wang, Guan-E; Xu, Gang; Liu, Bin-Wen; Wang, Ming-Sheng; Yao, Ming-Shui; Guo, Guo-Cong

    2016-01-11

    Crystalline nanotube array would create great opportunity for novel electrical application. Herein we report the first example of a metal halide based crystalline nanotube array which is constructed from an unprecedented giant [Pb(II)18I54(I2)9] wheel cluster, as determined by synchrotron X-ray diffraction. The electrical properties of the single crystal were studied and the present compound shows typical semiconductivity and highly anisotropic conductivity.

  1. Single-handed helical wrapping of single-walled carbon nanotubes by chiral, ionic, semiconducting polymers.

    PubMed

    Deria, Pravas; Von Bargen, Christopher D; Olivier, Jean-Hubert; Kumbhar, Amar S; Saven, Jeffery G; Therien, Michael J

    2013-10-30

    We establish the requisite design for aryleneethynylene polymers that give rise to single-handed helical wrapping of single-walled carbon nanotubes (SWNTs). Highly charged semiconducting polymers that utilize either an (R)- or (S)-1,1'-bi-2-naphthol component in their respective conjugated backbones manifest HRTEM and AFM images of single-chain-wrapped SWNTs that reveal significant preferences for the anticipated helical wrapping handedness; statistical analysis of these images, however, indicates that ∼20% of the helical structures are formed with the "unexpected" handedness. CD spectroscopic data, coupled with TDDFT-based computational studies that correlate the spectral signatures of semiconducting polymer-wrapped SWNT assemblies with the structural properties of the chiral 1,1'-binaphthyl unit, suggest strongly that two distinct binaphthalene SWNT binding modes, cisoid-facial and cisoid-side, are possible for these polymers, with the latter mode responsible for inversion of helical chirality and the population of polymer-SWNT superstructures that feature the unexpected polymer helical wrapping chirality at the nanotube surface. Analogous aryleneethynylene polymers were synthesized that feature a 2,2'-(1,3-benzyloxy)-bridged (b)-1,1'-bi-2-naphthol unit: this 1,1'-bi-2-naphthol derivative is characterized by a bridging 2,2'-1,3 benzyloxy tether that restricts the torsional angle between the two naphthalene subunits along its C1-C1' chirality axis to larger, oblique angles that facilitate more extensive van der Waals contact of the naphthyl subunits with the nanotube. Similar microscopic, spectroscopic, and computational studies determine that chiral polymers based on conformationally restricted transoid binaphthyl units direct preferential facial binding of the polymer with the SWNT and thereby guarantee helically wrapped polymer-nanotube superstructures of fixed helical chirality. Molecular dynamics simulations provide an integrated picture tying together the

  2. Graphene/Carbon Nanotube Cross-Junction Devices

    NASA Astrophysics Data System (ADS)

    Blees, Melina; Xu, Xiaodong; van der Zande, Arend; Zhong, Zhaohui; Gabor, Nathan; Pham, Phi; McEuen, Paul

    2010-03-01

    We have built crossed carbon nanotube/graphene junctions from CVD graphene and aligned arrays of carbon nanotubes. Large-area single-layer graphene was grown on a copper film and transferred to silicon oxide, then lithographically patterned and electrically contacted. Highly aligned arrays of single-walled carbon nanotubes were CVD-grown on quartz and transferred to complete the devices. We probed these new geometries using electrical measurements, studied their optoelectronic response with scanning photocurrent microscopy, and explored the temperature and gate dependence of the junctions. We found that graphene acts as a very good electrode for carbon nanotubes, pointing to the possibility of creating fully-integrated, transparent, flexible transistors purely from carbon nanomaterials.

  3. Dielectrophoretic Assembly of Semiconducting Carbon Nanotubes Separated and Enriched by Spin Column Chromatography and Its Application to Gas Sensing

    NASA Astrophysics Data System (ADS)

    Nakano, Michihiko; Fujioka, Masahiro; Mai, Kaori; Watanabe, Hideaki; Martin, Yul; Suehiro, Junya

    2012-04-01

    The present authors have previously demonstrated the electrokinetic fabrication of a single-walled carbon nanotube (SWCNT) gas sensor by employing dielectrophoresis. Because this method employs mass-produced SWCNTs, it can realize cheaper and more flexible SWCNT gas sensor fabrication than that based on the on-site synthesis of SWCNTs. In this study, a new protocol was proposed and tested for the separation and enrichment of semiconducting SWCNTs, aiming to improve the SWCNT gas sensor sensitivity. The protocol employed a spin column filled with size-exclusion dextran-based gel beads as well as two surfactants (sodium dodecyl sulfate and sodium deoxycholate), which had different affinities to metallic and semiconducting SWCNTs. The separation and enrichment of the semiconducting SWCNTs were confirmed by measuring their optical and electrical properties. The CNT gas sensor fabricated using enriched semiconducting SWCNTs was highly sensitive to nitrogen dioxide (NO2) gas, - more sensitive by 10 times than that fabricated using the pristine SWCNT mixture.

  4. Thin film transistors using preferentially grown semiconducting single-walled carbon nanotube networks by water-assisted plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kim, Un Jeong; Lee, Eun Hong; Kim, Jong Min; Min, Yo-Sep; Kim, Eunseong; Park, Wanjun

    2009-07-01

    Nearly perfect semiconducting single-walled carbon nanotube random network thin film transistors were fabricated and their reproducible transport properties were investigated. The networked single-walled carbon nanotubes were directly grown by water-assisted plasma-enhanced chemical vapor deposition. Optical analysis confirmed that the nanotubes were mostly semiconductors without clear metallic resonances in both the Raman and the UV-vis-IR spectroscopy. The transistors made by the nanotube networks whose density was much larger than the percolation threshold also showed no metallic paths. Estimation based on the conductance change of semiconducting nanotubes in the SWNT network due to applied gate voltage difference (conductance difference for on and off state) indicated a preferential growth of semiconducting nanotubes with an advantage of water-assisted PECVD. The nanotube transistors showed 10-5 of on/off ratio and ~8 cm2 V-1 s-1 of field effect mobility.

  5. Thin film transistors using preferentially grown semiconducting single-walled carbon nanotube networks by water-assisted plasma-enhanced chemical vapor deposition.

    PubMed

    Kim, Un Jeong; Lee, Eun Hong; Kim, Jong Min; Min, Yo-Sep; Kim, Eunseong; Park, Wanjun

    2009-07-22

    Nearly perfect semiconducting single-walled carbon nanotube random network thin film transistors were fabricated and their reproducible transport properties were investigated. The networked single-walled carbon nanotubes were directly grown by water-assisted plasma-enhanced chemical vapor deposition. Optical analysis confirmed that the nanotubes were mostly semiconductors without clear metallic resonances in both the Raman and the UV-vis-IR spectroscopy. The transistors made by the nanotube networks whose density was much larger than the percolation threshold also showed no metallic paths. Estimation based on the conductance change of semiconducting nanotubes in the SWNT network due to applied gate voltage difference (conductance difference for on and off state) indicated a preferential growth of semiconducting nanotubes with an advantage of water-assisted PECVD. The nanotube transistors showed 10(-5) of on/off ratio and approximately 8 cm2 V(-1) s(-1) of field effect mobility. PMID:19567966

  6. Vacuum filtration based formation of liquid crystal films of semiconducting carbon nanotubes and high performance transistor devices.

    PubMed

    King, Benjamin; Panchapakesan, Balaji

    2014-05-01

    In this paper, we report ultra-thin liquid crystal films of semiconducting carbon nanotubes using a simple vacuum filtration process. Vacuum filtration of nanotubes in aqueous surfactant solution formed nematic domains on the filter membrane surface and exhibited local ordering. A 2D fast Fourier transform was used to calculate the order parameters from scanning electron microscopy images. The order parameter was observed to be sensitive to the filtration time demonstrating different regions of transformation namely nucleation of nematic domains, nanotube accumulation and large domain growth.Transmittance versus sheet resistance measurements of such films resulted in optical to dc conductivity of σ(opt)/σ(dc) = 9.01 indicative of purely semiconducting nanotube liquid crystal network.Thin films of nanotube liquid crystals with order parameters ranging from S = 0.1-0.5 were patterned into conducting channels of transistor devices which showed high I(on)/I(off) ratios from 10-19,800 and electron mobility values μ(e) = 0.3-78.8 cm(2) (V-s)(-1), hole mobility values μ(h) = 0.4-287 cm(2) (V-s)(-1). High I on/I off ratios were observed at low order parameters and film mass. A Schottky barrier transistor model is consistent with the observed transistor characteristics. Electron and hole mobilities were seen to increase with order parameters and carbon nanotube mass fractions. A fundamental tradeoff between decreasing on/off ratio and increasing mobility with increasing nanotube film mass and order parameter is therefore concluded. Increase in order parameters of nanotubes liquid crystals improved the electronic transport properties as witnessed by the increase in σ(dc)/σ(opt) values on macroscopic films and high mobilities in microscopic transistors. Liquid crystal networks of semiconducting nanotubes as demonstrated here are simple to fabricate, transparent, scalable and could find wide ranging device applications.

  7. Vacuum filtration based formation of liquid crystal films of semiconducting carbon nanotubes and high performance transistor devices

    NASA Astrophysics Data System (ADS)

    King, Benjamin; Panchapakesan, Balaji

    2014-05-01

    In this paper, we report ultra-thin liquid crystal films of semiconducting carbon nanotubes using a simple vacuum filtration process. Vacuum filtration of nanotubes in aqueous surfactant solution formed nematic domains on the filter membrane surface and exhibited local ordering. A 2D fast Fourier transform was used to calculate the order parameters from scanning electron microscopy images. The order parameter was observed to be sensitive to the filtration time demonstrating different regions of transformation namely nucleation of nematic domains, nanotube accumulation and large domain growth.Transmittance versus sheet resistance measurements of such films resulted in optical to dc conductivity of σ opt/σ dc = 9.01 indicative of purely semiconducting nanotube liquid crystal network.Thin films of nanotube liquid crystals with order parameters ranging from S = 0.1-0.5 were patterned into conducting channels of transistor devices which showed high I on/I off ratios from 10-19 800 and electron mobility values μ e = 0.3-78.8 cm2 (V-s)-1, hole mobility values μ h = 0.4-287 cm2 (V-s)-1. High I on/I off ratios were observed at low order parameters and film mass. A Schottky barrier transistor model is consistent with the observed transistor characteristics. Electron and hole mobilities were seen to increase with order parameters and carbon nanotube mass fractions. A fundamental tradeoff between decreasing on/off ratio and increasing mobility with increasing nanotube film mass and order parameter is therefore concluded. Increase in order parameters of nanotubes liquid crystals improved the electronic transport properties as witnessed by the increase in σ dc/σ opt values on macroscopic films and high mobilities in microscopic transistors. Liquid crystal networks of semiconducting nanotubes as demonstrated here are simple to fabricate, transparent, scalable and could find wide ranging device applications.

  8. Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications.

    PubMed

    Islam, Ahmad E; Rogers, John A; Alam, Muhammad A

    2015-12-22

    High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements.

  9. A photodegradable hexaaza-pentacene molecule for selective dispersion of large-diameter semiconducting carbon nanotubes.

    PubMed

    Han, Jie; Ji, Qiyan; Li, Hongbo; Li, Gang; Qiu, Song; Li, Hai-Bei; Zhang, Qichun; Jin, Hehua; Li, Qingwen; Zhang, Jin

    2016-06-01

    Harvesting high-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with removable dispersants remains a challenge. In this work, we demonstrate that small heteroacene derivatives may serve as promising selective dispersants for sorting s-SWCNTs. A rich N "doped" and thiophene-substituted hexaazapentacene molecule, denoted as 4HP, was found to be more favorable for high-purity s-SWCNTs with large diameters. Importantly, 4HP is photodegradable under 365 nm or blue light, which enables a simple deposition approach for the formation of clean s-SWCNT networks. The as-fabricated thin film transistors show excellent performance with a charge-mobility of 30-80 cm(2) V(-1) s(-1) and an on-off ratio of 10(4)-10(6). PMID:27230421

  10. Exciton-exciton annihilation and relaxation pathways in semiconducting carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Chmeliov, Jevgenij; Narkeliunas, Jonas; Graham, Matt W.; Fleming, Graham R.; Valkunas, Leonas

    2016-01-01

    We present a thorough analysis of one- and two-color transient absorption measurements performed on single- and double-walled semiconducting carbon nanotubes. By combining the currently existing models describing exciton-exciton annihilation--the coherent and the diffusion-limited ones--we are able to simultaneously reproduce excitation kinetics following both E11 and E22 pump conditions. Our simulations revealed the fundamental photophysical behavior of one-dimensional coherent excitons and non-trivial excitation relaxation pathways. In particular, we found that after non-linear annihilation a doubly-excited exciton relaxes directly to its E11 state bypassing the intermediate E22 manifold, so that after excitation resonant with the E11 transition, the E22 state remains unpopulated. A quantitative explanation for the observed much faster excitation kinetics probed at E22 manifold, comparing to those probed at the E11 band, is also provided.

  11. Tunable spin-polaron state in a singly clamped semiconducting carbon nanotube

    NASA Astrophysics Data System (ADS)

    Pistolesi, F.; Shekhter, R.

    2015-07-01

    We consider a semiconducting carbon nanotube (CNT) lying on a ferromagnetic insulating substrate with one end passing the substrate and suspended over a metallic gate. We assume that the polarized substrate induces an exchange interaction acting as a local magnetic field for the electrons in the nonsuspended CNT side. Generalizing the approach of I. Snyman and Yu.V. Nazarov [Phys. Rev. Lett. 108, 076805 (2012), 10.1103/PhysRevLett.108.076805], we show that one can generate electrostatically a tunable spin-polarized polaronic state localized at the bending end of the CNT. We argue that at low temperatures manipulation and detection of the localized quantum spin state are possible.

  12. Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon.

    PubMed

    Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun

    2016-03-01

    We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si.

  13. Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications.

    PubMed

    Islam, Ahmad E; Rogers, John A; Alam, Muhammad A

    2015-12-22

    High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements. PMID:26540144

  14. Selective Growth of Metallic and Semiconducting Single Walled Carbon Nanotubes on Textured Silicon.

    PubMed

    Jang, Mira; Lee, Jongtaek; Park, Teahee; Lee, Junyoung; Yang, Jonghee; Yi, Whikun

    2016-03-01

    We fabricated the etched Si substrate having the pyramidal pattern size from 0.5 to 4.2 μm by changing the texturing process parameters, i.e., KOH concentration, etching time, and temperature. Single walled carbon nanotubes (SWNTs) were then synthesized on the etched Si substrates with different pyramidal pattern by chemical vapor deposition. We investigated the optical and electronic properties of SWNT film grown on the etched Si substrates of different morphology by using scanning electron microscopy, Raman spectroscopy and conducting probe atomic force microscopy. We confirmed that the morphology of substrate strongly affected the selective growth of the SWNT film. Semiconducting SWNTs were formed on larger pyramidal sized Si wafer with higher ratio compared with SWNTs on smaller pyramidal sized Si. PMID:27455748

  15. Angular momentum and topology in semiconducting single-wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Izumida, W.; Okuyama, R.; Yamakage, A.; Saito, R.

    2016-05-01

    Semiconducting single-wall carbon nanotubes are classified into two types by means of the orbital angular momentum of the valley state, which is useful to study their low-energy electronic properties in finite length. The classification is given by an integer d , which is the greatest common divisor of two integers n and m specifying the chirality of nanotubes, by analyzing cutting lines. For the case that d is greater than or equal to four, the two lowest subbands from two valleys have different angular momenta with respect to the nanotube axis. Reflecting the decoupling of two valleys, discrete energy levels in finite-length nanotubes exhibit fourfold degeneracy and small lift of fourfold degeneracy by the spin-orbit interaction. For the case that d is less than or equal to two, in which the two lowest subbands from two valleys have the same angular momentum, discrete levels exhibit a lift of fourfold degeneracy reflecting the coupling of two valleys. Especially, two valleys are strongly coupled when the chirality is close to the armchair chirality. An effective one-dimensional lattice model is derived by extracting states with relevant angular momentum, which reveals the valley coupling in the eigenstates. A bulk-edge correspondence, which is a relationship between the number of edge states and the winding number calculated in the corresponding bulk system, is analytically shown by using the argument principle, and this enables us to estimate the number of edge states from the bulk property. The number of edge states depends not only on the chirality but also on the shape of boundary.

  16. Surface electronic structure of nitrogen-doped semiconducting single-walled carbon nanotube networks

    NASA Astrophysics Data System (ADS)

    Ran Park, Young; Jae Ko, Min; Song, Yoon-Ho; Jin Lee, Cheol

    2013-10-01

    We investigated the effects of vacuum annealing on the surface electronic structure and the work function of single-walled carbon nanotubes (SWCNTs). We changed the doping type of semiconducting single-walled carbon nanotubes (semi-SWCNTs) from p-type to n-type, and investigated their optical properties. The HNO3 treated p-type SWCNT network was converted to n-type after vacuum annealing due to formation of C-N bond. The C 1s sp2 binding energy of the vacuum annealed semi-SWCNTs was shifted toward a higher binding energy about 0.42 eV, which indicates a raising Fermi level as much as 0.42 eV compared with the intrinsic semi-SWCNTs. In addition, the work function of the vacuum annealed semi-SWCNT was observed towards lower energies. It is considered that the C-N bonding of semi-SWCNTs creates a donor level near the bottom of the conduction band, thus raising the Fermi level. The ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy revealed that the increased binding energy of C 1s sp2 and the decreased work function of semi-SWCNTs are caused by n-type doping after vacuum annealing.

  17. Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes on Substrate by Europium Oxide

    PubMed Central

    2010-01-01

    In this paper, we have demonstrated that europium oxide (Eu2O3) is a new type of active catalyst for single-walled carbon nanotubes (SWNTs) growth under suitable conditions. Both random SWNT networks and horizontally aligned SWNT arrays are efficiently grown on silicon wafers. The density of the SWNT arrays can be altered by the CVD conditions. This result further provides the experimental evidence that the efficient catalyst for SWNT growth is more size dependent than the catalysts themselves. Furthermore, the SWNTs from europium sesquioxides have compatibly higher quality than that from Fe/Mo catalyst. More importantly, over 80% of the nanotubes from Eu2O3 are semiconducting SWNTs (s-SWNTs), indicating the preferential growth of s-SWNTs from Eu2O3. This new finding could open a way for selective growth of s-SWNTs, which can be used as high-current nanoFETs and sensors. Moreover, the successful growth of SWNTs by Eu2O3 catalyst provides new experimental information for understanding the preferential growth of s-SWNTs from Eu2O3, which may be helpful for their controllable synthesis. PMID:21076709

  18. Gate-tuned spin to charge conversion in semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Shigematsu, Ei; Nagano, Hiroshi; Dushenko, Sergey; Ando, Yuichiro; Tsuda, Tetsuya; Kuwabata, Susumu; Takenobu, Taishi; Tanaka, Takeshi; Kataura, Hiromichi; Shinjo, Teruya; Shiraishi, Masashi

    Interconversion of spin and charge current is a hot topic in the molecular spintronics. It was achieved for the first time in a conducting conjugated polymer 1, and shortly followed by spin-charge conversion in graphene. However, control over carrier type has not been shown yet. In this study we focused on single-walled carbon nanotubes (SWNT). Spin injection into semiconductor from metal ferromagnet is challenging due to the presence of Schottky barrier and conductance mismatch problem. To bypass it, we used ionic liquid electric gate and ferrimagnetic insulator. We prepared SWNT layer on top of ferrimagnetic yttrium iron garnet substrate. Using spin pumping we successfully observed spin-charge conversion in metallic SWNT. As for a semiconducting SWNT, we applied a top gate using ionic liquid. The drain-source current vs. gate voltage dependence showed tuning of the Fermi level and changing of carrier type. Under gate voltage application we measured electromotive force induced by spin pumping. Detected voltage changed its sign together with carrier type. This is first evidence of spin-charge conversion in carbon nanotubes 2. 1 K. Ando et al., Nature Mater. 12, 622 (2013). 2 E. Shigematsu et al., submitted.

  19. Photo-physics of P3HT blended with highly enriched metallic and semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Holt, Josh; Mistry, Kevin; Ferguson, Andrew; Blackburn, Jeff

    2010-03-01

    Single-walled carbon nanotubes (SWNTs) possess unique properties that may potentially benefit photovoltaic (PV) devices, including high carrier mobilities, convenient work functions, and tunable optical transitions that span most of the solar spectrum. However, significant polydispersity in both diameter and electronic structure have hindered the realization of efficient PV cells incorporating SWNTs. In this presentation, we report the use of advanced techniques to separate single-walled carbon nanotubes (SWNTs) created by laser vaporization into highly enriched semiconducting and metallic species. The enriched SWNTs are then blended with regioregular poly(3-hexylthiophene) (P3HT) to serve as a model electron donor/acceptor system, analogous to systems typically used in organic PV devices. We investigate the photo-physical properties of charge generation and transfer using primarily time-resolved microwave conductivity (TRMC) and photoluminescence excitation spectroscopy and discuss the disparities between metallic vs semiconducting SWNT acceptors.

  20. Ultrafast Exciton Hopping Observed in Bare Semiconducting Carbon Nanotube Thin Films with Two-Dimensional White-Light Spectroscopy.

    PubMed

    Mehlenbacher, Randy D; Wang, Jialiang; Kearns, Nicholas M; Shea, Matthew J; Flach, Jessica T; McDonough, Thomas J; Wu, Meng-Yin; Arnold, Michael S; Zanni, Martin T

    2016-06-01

    We observe ultrafast energy transfer between bare carbon nanotubes in a thin film using two-dimensional (2D) white-light spectroscopy. Using aqueous two-phase separation, semiconducting carbon nanotubes are purified from their metallic counterparts and condensed into a 10 nm thin film with no residual surfactant. Cross peak intensities put the time scale for energy transfer at <60 fs, and 2D anisotropy measurements determine that energy transfer is most efficient between parallel nanotubes, thus favoring directional energy flow. Lifetimes are about 300 fs. Thus, these results are in sharp contrast to thin films prepared from nanotubes that are wrapped by polymers, which exhibit picosecond energy transfer and randomize the direction of energy flow. Ultrafast energy flow and directionality are exciting properties for next-generation photovoltaics, photodetectors, and other devices. PMID:27182690

  1. Mechanical deformations of boron nitride nanotubes in crossed junctions

    NASA Astrophysics Data System (ADS)

    Zhao, Yadong; Chen, Xiaoming; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw; Ke, Changhong

    2014-04-01

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%-33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.21-4.67 nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.2-7.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07 ± 0.11 TPa and 0.18-0.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  2. Mechanical deformations of boron nitride nanotubes in crossed junctions

    SciTech Connect

    Zhao, Yadong; Chen, Xiaoming; Ke, Changhong; Park, Cheol; Fay, Catharine C.; Stupkiewicz, Stanislaw

    2014-04-28

    We present a study of the mechanical deformations of boron nitride nanotubes (BNNTs) in crossed junctions. The structure and deformation of the crossed tubes in the junction are characterized by using atomic force microscopy. Our results show that the total tube heights are reduced by 20%–33% at the crossed junctions formed by double-walled BNNTs with outer diameters in the range of 2.21–4.67 nm. The measured tube height reduction is found to be in a nearly linear relationship with the summation of the outer diameters of the two tubes forming the junction. The contact force between the two tubes in the junction is estimated based on contact mechanics theories and found to be within the range of 4.2–7.6 nN. The Young's modulus of BNNTs and their binding strengths with the substrate are quantified, based on the deformation profile of the upper tube in the junction, and are found to be 1.07 ± 0.11 TPa and 0.18–0.29 nJ/m, respectively. Finally, we perform finite element simulations on the mechanical deformations of the crossed BNNT junctions. The numerical simulation results are consistent with both the experimental measurements and the analytical analysis. The results reported in this paper contribute to a better understanding of the structural and mechanical properties of BNNTs and to the pursuit of their applications.

  3. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    PubMed Central

    Hanna, Amir N.; Fahad, Hossain M.; Hussain, Muhammad M.

    2015-01-01

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET. PMID:25923104

  4. Pure Optical Dephasing Dynamics in Semiconducting Single-Walled Carbon Nanotubes

    SciTech Connect

    Graham, Matt; Fleming, Graham; Ma, Yingzhong; Green, Alexander A.; Hersam, Mark C.

    2011-01-01

    We report a detailed study of ultrafast exciton dephasing processes in semiconducting single-walled carbon nanotubes (SWNTs) employing a sample highly enriched in a single tube species, the (6,5) tube. Systematic measurements of femtosecond pump-probe, two-pulse photon echo and three-pulse photon echo peak shift over a broad range of excitation intensities and lattice temperature (from 4.4 to 292 K) enable us to quantify the timescales of pure optical dephasing (T 2 ), along with exciton-exciton and exciton-phonon scattering, environmental effects as well as spectral diffusion. While the exciton dephasing time (T2 ) increases from 205 fs at room temperature to 320 fs at 70 K, we found that further decrease of the lattice temperature leads to a shortening of the T2 times. This complex temperature dependence was found to arise from an enhanced relaxation of exciton population at lattice temperatures below 80 K. By quantitatively accounting the contribution from the population relaxation, the corresponding pure optical dephasing times increase monotonically from 225 fs at room temperature to 508 fs at 4.4 K. We further found that below 180 K, the inverse of the pure dephasing time (1/T 2 ) scales linearly with temperature with a slope of 6.7 0.6 eV/K, which suggests dephasing arising from one-phonon scattering (i.e. acoustic phonons). In view ofthe large dynamic disorder of the surrounding environment, the origin of the long room temperature pure dephasing time is proposed to result from reduced strength of exciton-phonon coupling by motional narrowing over nuclear fluctuations. This consideration further suggests the occurrence of remarkable initial exciton delocalization, and makes nanotubes ideal to study many-body effects in spatially confined systems.

  5. H-bonded supramolecular polymer for the selective dispersion and subsequent release of large-diameter semiconducting single-walled carbon nanotubes.

    PubMed

    Pochorovski, Igor; Wang, Huiliang; Feldblyum, Jeremy I; Zhang, Xiaodong; Antaris, Alexander L; Bao, Zhenan

    2015-04-01

    Semiconducting, single-walled carbon nanotubes (SWNTs) are promising candidates for applications in thin-film transistors, solar cells, and biological imaging. To harness their full potential, however, it is necessary to separate the semiconducting from the metallic SWNTs present in the as-synthesized SWNT mixture. While various polymers are able to selectively disperse semiconducting SWNTs, the subsequent removal of the polymer is challenging. However, many applications require semiconducting SWNTs in their pure form. Toward this goal, we have designed a 2-ureido-6[1H]-pyrimidinone (UPy)-based H-bonded supramolecular polymer that can selectively disperse semiconducting SWNTs. The dispersion purity is inversely related to the dispersion yield. In contrast to conventional polymers, the polymer described herein was shown to disassemble into monomeric units upon addition of an H-bond-disrupting agent, enabling isolation of dispersant-free, semiconducting SWNTs. PMID:25815604

  6. Multimodal probing of oxygen and water interaction with metallic and semiconducting carbon nanotube networks under ultraviolet irradiation

    NASA Astrophysics Data System (ADS)

    Muckley, Eric S.; Nelson, Anthony J.; Jacobs, Christopher B.; Ivanov, Ilia N.

    2016-04-01

    Interaction between ultraviolet (UV) light and carbon nanotube (CNT) networks plays a central role in gas adsorption, sensor sensitivity, and stability of CNT-based electronic devices. To determine the effect of UV light on sorption kinetics and resistive gas/vapor response of different CNT networks, films of semiconducting single-wall nanotubes (s-SWNTs), metallic single-wall nanotubes, and multiwall nanotubes were exposed to O2 and H2O vapor in the dark and under UV irradiation. Changes in film resistance and mass were measured in situ. In the dark, resistance of metallic nanotube networks increases in the presence of O2 and H2O, whereas resistance of s-SWNT networks decreases. UV irradiation decreases the resistance of metallic nanotube networks in the presence of O2 and H2O and increases the gas/vapor sensitivity of s-SWNT networks by nearly a factor of 2 compared to metallic nanotube networks. s-SWNT networks show evidence of delamination from the gold-plated quartz crystal microbalance crystal, possibly due to preferential adsorption of O2 and H2O on gold. UV irradiation increases the sensitivity of all CNT networks to O2 and H2O by an order of magnitude, which demonstrates the importance of UV light for enhancing response and lowering detection limits in CNT-based gas/vapor sensors.

  7. Multimodal probing of oxygen and water interaction with metallic and semiconducting carbon nanotube networks under ultraviolet irradiation

    DOE PAGES

    Nelson, Anthony J.; Ivanov, Ilia N.; Muckley, Eric S.; Jacobs, Christopher B.

    2016-06-01

    In this study, carbon nanotube (CNT) networks composed of semiconducting single wall nanotubes (s-SWNTs), metallic single wall nanotubes (m-SWNTs), and multiwall nanotubes (MWNTs) were exposed to O2 and H2O vapor in the dark and under UV irradiation. Changes in film resistance and mass were measured in situ. In the dark, resistance of metallic nanotube networks increases in the presence of O2 and H2O, whereas resistance of s-SWNT networks decreases. We find that UV irradiation increases the sensitivity of CNT networks to O2 and H2O by more than an order of magnitude. Under UV irradiation, the resistance of metallic nanotube networksmore » decreases in the presence of O2 and H2O likely through the generation of free charge carriers. UV irradiation increases the gas/vapor sensitivity of s-SWNT networks by nearly a factor of 2 compared to metallic nanotube networks. Networks of s-SWNTs show evidence of delamination from the gold-plated QCM crystal, possibly due to preferential adsorption of O2 and H2O on gold.« less

  8. Fluorescence dynamics and fine structure of dark excitons in semiconducting single-wall carbon nanotubes.

    PubMed

    Alfonsi, Jessica; Meneghetti, Moreno

    2012-06-27

    Exact diagonalization results are reported for the bright and dark exciton structure of semiconducting single-wall carbon nanotubes in the framework of the Hubbard model combined with a small crystal approach for several values of the correlation coupling strength U/t. Our findings, in the low-intermediate correlation regime (1.5 < U/t < 2.1), show the presence of dark states above and below the first bright exciton |B> and can account for reported experimental values of deep triplet states below |B> and of a K-momentum singlet dark exciton above this state. In order to fit the temporal profile of the photoluminescence (PL) decay, a bottleneck mechanism is considered involving a few dark states, with the respective energy gaps correspondingly obtained in the above-mentioned correlation range. We find that a kinetic model with one dark state above and two below |B> is able to recover the observed biexponential features of the PL behaviour with a reasonable set of parameters. Within this model we attribute the long tail of the PL to a delayed luminescence process of the bright state caused by the nearby calculated dark states.

  9. Evaluation of metallic and semiconducting single-walled carbon nanotube characteristics.

    PubMed

    Wu, Bin; Geng, Dechao; Liu, Yunqi

    2011-05-01

    The nature of the mixed electronic type metallic (M-) and semiconducting (S-) single-walled carbon nanotubes (SWNTs) synthesized by current methods has posed a key challenge for the development of high performance SWNT-based electronic devices. The precise measurements of M- to S-SWNT ratio in as-grown or separated samples are of paramount importance for the controlled synthesis, separation and the realization of various applications. The objective of this review is to provide comprehensive overview of the progress achieved so far for measuring the M/S ratio both on individual and collective levels of SWNT states. We begin with a brief introduction of SWNT structures/properties and discussion of the problems and difficulties associated with precise measurement of the M/S ratio, and then introduce the principles for obtaining distinguished signals from M-and S-SWNTs. These techniques are classified into different groups based either on the single/ensemble detection of SWNT samples or on the principles of techniques themselves. We then present the M/S ratio evaluation results of these methods, with emphasis on scanning probe microscopy (SPM)-based detection techniques. Finally, the prospects of precise and large-scale measurement of M/S ratio in achieving controlled synthesis and understanding growth mechanism of SWNTs are discussed.

  10. Investigation of optimal hydrogen sensing performance in semiconducting carbon nanotube network transistors with palladium electrodes

    NASA Astrophysics Data System (ADS)

    Choi, Bongsik; Lee, Dongil; Ahn, Jae-Hyuk; Yoon, Jinsu; Lee, Juhee; Jeon, Minsu; Kim, Dong Myong; Kim, Dae Hwan; Park, Inkyu; Choi, Yang-Kyu; Choi, Sung-Jin

    2015-11-01

    The work function of palladium (Pd) is known to be sensitive to hydrogen (H2) via the formation of a surface dipole layer or Pd hydride. One approach to detect such a change in the work function is based on the formation of a Schottky barrier between Pd and a semiconductor. Here, we demonstrate a H2 sensor operable at room temperature by assembling solution-processed, pre-separated semiconducting single-walled carbon nanotube (SWNT) network bridged by Pd source/drain (S/D) electrodes in a configuration of field-effect transistors (FETs) with a local back-gate electrode. To begin with, we observed that the H2 response of the fabricated SWNT FETs can be enhanced in the linear operating regime, where the change in the work function of the Pd S/D electrodes by H2 can be effectively detected. We also explore the H2 responses in various SWNT FETs with different physical dimensions to optimize the sensing performance.

  11. Many-body effects in semiconducting single-wall silicon nanotubes

    PubMed Central

    Wei, Wei

    2014-01-01

    Summary The electronic and optical properties of semiconducting silicon nanotubes (SiNTs) are studied by means of the many-body Green’s function method, i.e., GW approximation and Bethe–Salpeter equation. In these studied structures, i.e., (4,4), (6,6) and (10,0) SiNTs, self-energy effects are enhanced giving rise to large quasi-particle (QP) band gaps due to the confinement effect. The strong electron−electron (e−e) correlations broaden the band gaps of the studied SiNTs from 0.65, 0.28 and 0.05 eV at DFT level to 1.9, 1.22 and 0.79 eV at GW level. The Coulomb electron−hole (e−h) interactions significantly modify optical absorption properties obtained at noninteracting-particle level with the formation of bound excitons with considerable binding energies (of the order of 1 eV) assigned: the binding energies of the armchair (4,4), (6,6) and zigzag (10,0) SiNTs are 0.92, 1.1 and 0.6 eV, respectively. Results in this work are useful for understanding the physics and applications in silicon-based nanoscale device components. PMID:24455458

  12. Surfactant free fractions of metallic and semiconducting single-walled carbon nanotubes via optimised gel chromatography

    SciTech Connect

    Lukaszczuk, Pawel; Ruemmeli, Mark H.; Knupfer, Martin; Kalenczuk, Ryszard J.; Borowiak-Palen, Ewa

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer The application of gel permeation chromatography technique in a field of SWCNT separation. Black-Right-Pointing-Pointer Non-commercial agarose gel used as a column filling. Black-Right-Pointing-Pointer Purification route is presented, quality and quantity estimation is shown. Black-Right-Pointing-Pointer Process is ready for high-scale separation of SWCNTs. -- Abstract: We report the procedure of sorting/purification of carbon nanotubes by electronic type using chromatographic column with sodium dodecylsulfate (SDS) and sodium deoxycholate (DOC) solutions as the eluents. The non-commercial agarose gel in different concentrations has been tested in the process. It was found that in optimal gel concentration the fractionation resulted in {approx}96.2% yield of semiconducting species. Importantly, to get surfactant-free fractions the post-separation purification procedure has been carried out. The UV-vis-NIR and Raman spectroscopy have been utilised for the samples analysis. High resolution transmission microscopy and thermogravimetric analysis allowed to study the sample morphology and purity, respectively.

  13. Semiconducting ZnSnN2 thin films for Si/ZnSnN2 p-n junctions

    NASA Astrophysics Data System (ADS)

    Qin, Ruifeng; Cao, Hongtao; Liang, Lingyan; Xie, Yufang; Zhuge, Fei; Zhang, Hongliang; Gao, Junhua; Javaid, Kashif; Liu, Caichi; Sun, Weizhong

    2016-04-01

    ZnSnN2 is regarded as a promising photovoltaic absorber candidate due to earth-abundance, non-toxicity, and high absorption coefficient. However, it is still a great challenge to synthesize ZnSnN2 films with a low electron concentration, in order to promote the applications of ZnSnN2 as the core active layer in optoelectronic devices. In this work, polycrystalline and high resistance ZnSnN2 films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnSnN2 p-n junctions were constructed. The electron concentration and Hall mobility were enhanced from 2.77 × 1017 to 6.78 × 1017 cm-3 and from 0.37 to 2.07 cm2 V-1 s-1, corresponding to the annealing temperature from 200 to 350 °C. After annealing at 300 °C, the p-n junction exhibited the optimum rectifying characteristics, with a forward-to-reverse ratio over 103. The achievement of this ZnSnN2-based p-n junction makes an opening step forward to realize the practical application of the ZnSnN2 material. In addition, the nonideal behaviors of the p-n junctions under both positive and negative voltages are discussed, in hope of suggesting some ideas to further improve the rectifying characteristics.

  14. Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

    NASA Astrophysics Data System (ADS)

    Katzenmeyer, Aaron Michael

    As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been

  15. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.

    PubMed

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-28

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.

  16. Direct intermolecular force measurements between functional groups and individual metallic or semiconducting single-walled carbon nanotubes.

    PubMed

    Thong, Ya Xuan; Poon, Yin Fun; Chen, Tzu-Yin; Li, Lain-Jong; Chan-Park, Mary B

    2014-02-26

    Many electronic applications of single-walled carbon nanotubes (SWNTs) require electronic homogeneity in order to maximally exploit their outstanding properties. Non-covalent separation is attractive as it is scalable and results in minimal alteration of nanotube properties. However, fundamental understanding of the metallicity-dependence of functional group interactions with nanotubes is still lacking; this lack is compounded by the absence of methods to directly measure these interactions. Herein, a novel technology platform based on a recently developed atomic force microscopy (AFM) mode is reported which directly quantifies the adhesion forces between a chosen functional group and individual nanotubes of known metallicity, permitting comparisons between different metallicity. These results unambiguously show that this technology platform is able to discriminate the subtle adhesion force differences of a chosen functional group with pure metallic as opposed to pure semiconducting nanotubes. This new method provides a route towards rapid advances in understanding of non-covalent interactions of large libraries of compounds with nanotubes of varying metallicity and diameter; presenting a superior tool to assist the discovery of more effective metallicity-based SWNT separation agents.

  17. Exciton annihilation and dephasing dynamics in semiconducting single-walled carbon nanotubes

    SciTech Connect

    Graham, Matt; Ma, Yingzhong; Green, Alexander A.; Hersam, Mark C.; Fleming, Graham

    2010-01-01

    Semiconducting single-walled carbon nanotubes (SWNTs) are one of the most intriguing nanomaterials due to their large aspect ratios, size tunable properties, and dominant many body interactions. While the dynamics of exciton population relaxation have been well characterized, optical dephasing processes have only been exam- ined indirectly through steady-state measurements such as single-molecule spectroscopy that can yield highly variable estimates of the homogeneous linewidth. To bring clarity to these conflicting estimates, a time-domain measurement of exciton dephasing at an ensemble level is necessary. Using two-pulse photon echo (2PE) spec- troscopy, comparatively long dephasing times approaching 200 fs are extracted for the (6,5) tube species at room temperature. In this contribution, we extend our previous study of 2PE and pump-probe spectroscopy to low temperatures to investigate inelastic exciton-exciton scattering. In contrast to the population kinetics observed upon excitation of the second transition-allowed excitonic state (E22 ), our one-color pump-probe data instead shows faster relaxation upon cooling to 60 K when the lowest transition-allowed state (E11 ) is directly excited for the (6,5) tube species. Analysis of the kinetics obtained suggests that the observed acceleration of kinetic decay at low temperature originates from an increasing rate of exciton-exciton annihilation. In order to directly probe exciton-exciton scattering processes, femtosecond 2PE signal is measured as a function of excitation fluence and temperature. Consistent with the observed enhancement of exciton-exciton scattering and annihilation at low temperatures, the dephasing rates show a correlated trend with the temperature dependence of the population lifetimes extracted from one-color pump-probe measurements.

  18. High-performance partially aligned semiconductive single-walled carbon nanotube transistors achieved with a parallel technique.

    PubMed

    Wang, Yilei; Pillai, Suresh Kumar Raman; Chan-Park, Mary B

    2013-09-01

    Single-walled carbon nanotubes (SWNTs) are widely thought to be a strong contender for next-generation printed electronic transistor materials. However, large-scale solution-based parallel assembly of SWNTs to obtain high-performance transistor devices is challenging. SWNTs have anisotropic properties and, although partial alignment of the nanotubes has been theoretically predicted to achieve optimum transistor device performance, thus far no parallel solution-based technique can achieve this. Herein a novel solution-based technique, the immersion-cum-shake method, is reported to achieve partially aligned SWNT networks using semiconductive (99% enriched) SWNTs (s-SWNTs). By immersing an aminosilane-treated wafer into a solution of nanotubes placed on a rotary shaker, the repetitive flow of the nanotube solution over the wafer surface during the deposition process orients the nanotubes toward the fluid flow direction. By adjusting the nanotube concentration in the solution, the nanotube density of the partially aligned network can be controlled; linear densities ranging from 5 to 45 SWNTs/μm are observed. Through control of the linear SWNT density and channel length, the optimum SWNT-based field-effect transistor devices achieve outstanding performance metrics (with an on/off ratio of ~3.2 × 10(4) and mobility 46.5 cm(2) /Vs). Atomic force microscopy shows that the partial alignment is uniform over an area of 20 × 20 mm(2) and confirms that the orientation of the nanotubes is mostly along the fluid flow direction, with a narrow orientation scatter characterized by a full width at half maximum (FWHM) of <15° for all but the densest film, which is 35°. This parallel process is large-scale applicable and exploits the anisotropic properties of the SWNTs, presenting a viable path forward for industrial adoption of SWNTs in printed, flexible, and large-area electronics.

  19. Photocurrent generation efficiency of a carbon nanotube pn junction

    NASA Astrophysics Data System (ADS)

    McCulley, Daniel; Aspitarte, Lee; Minot, Ethan

    Carrier multiplication effects can enhance the quantum efficiency of photovoltaic devices. For example, quantum dot solar cells have demonstrated photon-to-electron conversion efficiencies greater than 100% when photon energies exceed twice the band gap. Carbon nanotube photodiodes exhibit carrier multiplication effects (Gabor et al., Science 2009), but the quantum efficiency of such photodiodes has not previously been characterized. We have reproduced the carrier multiplication phenomena in individual CNT pn junctions and investigated the conditions under which it occurs. We will present early results quantifying the internal quantum efficiency of the process.

  20. Thermoelectric Transport Through Arrays Of Carbon Nanotube Junctions

    NASA Astrophysics Data System (ADS)

    Kuljanishvili, Irma; Choe, Jim; Chandrasekhar, Venkat; Shafraniuk, Serhii

    2011-03-01

    The work addresses the voltage-controlled thermal flow and electric current through the carbon nanotube (CNT) junction arrays. The CNT thermoelectric generation (TEG) promises a high efficiency for thermal and electric energy conversion in a variety of applications. The energy generation had been studied using advanced methods of the condensed matter physics and nanotechnology. We will outline our experimental findings based on CNTs - TEG devices. We will report on our results that involve TEG-CNTs devices in array and /or single CNTs junctions geometries. We will describe fabrications protocols for preferential CVD growth of CNTs and nanoscale precision patterning of the catalyst on predefined device architectures. Electronic transport and optical properties of the CNTs-TEG nanostructures will also be discussed. I.K. and S.S. acknowledge support from the U.S. Army CECOM Acquisition Center #W909MY-10-C-0032. I.K. acknowledge collaboration with NanoInk Inc.

  1. Water flow through carbon nanotube junctions as molecular convergent nozzles

    NASA Astrophysics Data System (ADS)

    Hanasaki, Itsuo; Nakatani, Akihiro

    2006-06-01

    Molecular dynamics (MD) simulations are conducted for water flow through carbon nanotube (CNT) junctions as molecular nozzles. The fluidized piston model (FPM) is employed to drive the inlet flow at streaming velocities of 25 and 50 m s-1. Water flow through the CNT junctions is found to undergo an increase in streaming velocity, a decrease in pressure, and an increase in temperature. Although the difference of the upstream velocities does not generally lead to an appreciable density difference in the downstream CNT, the higher streaming velocity causes the upstream density to increase. The streaming velocity remains almost constant in the upstream CNT, but increases dramatically in the junction region. The ratio of downstream to upstream streaming velocities increases with the ratio of upstream to downstream cross section. A higher inlet velocity results in larger acceleration, which is generally more noticeable at larger cross-sectional ratios, and less prominent in junctions with smaller cross-sectional ratios. The cross-sectional ratio calculated from the internal radii of the CNTs based on the oxygen atomic density profile of water is closer to the ratio of downstream to upstream streaming velocities than the cross-sectional ratio calculated from the radii given by the carbon atomic centres.

  2. Comparison of Gas Sensors Based on Oxygen Plasma-Treated Carbon Nanotube Network Films with Different Semiconducting Contents

    NASA Astrophysics Data System (ADS)

    Ham, Seung Woo; Hong, Hyun Pyo; Kim, Jin Woong; Kim, Jong Hyun; Kim, Ki Bum; Park, Chan Won; Min, Nam Ki

    2015-05-01

    We report on the effect of oxygen plasma treatment on the performance of single-wall carbon nanotube (SWCNT) NH3 gas sensors with different semiconducting contents (66% and 90% semiconducting SWCNTs). The performance of chemical sensors based on SWCNT networks depends on the concentration of semiconducting SWCNTs (s-SWCNTs), whose conductance can be significantly modulated by the absorbed molecules and the surface functionalization. After oxygen plasma treatment, the 66% s-SWCNT sample showed an increase in sensitivity from 0.0275%/ppm to 0.1525%/ppm (5.5 times), while the 90% s-SWCNT device demonstrated an increase in sensitivity from 0.1184%/ppm to 1.5707%/ppm (13 times). These results correspond to improvements in sensitivity of 57 times and 10 times compared with pristine and plasma-treated 66% s-SWCNT samples, respectively. In addition, the plasma-treated sensors exhibited much faster response and recovery times than the pristine one. The large improvement in performance was explained by the presence of oxygen-containing functional groups and the sp2-sp3 structure change of SWCNTs, which changes the binding energy while increasing the uptake of polar molecules such as NH3.

  3. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer

    NASA Astrophysics Data System (ADS)

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-01

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (+/-2 V) and subthreshold swing (SS) (122-161 mV dec-1), high effective mobility (up to 17.6-37.7 cm2 V-1 s-1) and high on/off ratio (104-107). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge

  4. Photoresponse of a Single Y-Junction Carbon Nanotube.

    PubMed

    Samanta, Sudeshna; Saini, Deepika; Singha, Achintya; Das, Kaustuv; Bandaru, Prabhakar R; Rao, Apparao M; Raychaudhuri, Arup Kumar

    2016-07-27

    We report investigation of optical response in a single strand of a branched carbon nanotube (CNT), a Y-junction CNT composed of multiwalled CNTs. The experiment was performed by connecting a pair of branches while grounding the remaining one. Of the three branch combinations, only one combination is optically active which also shows a nonlinear semiconductor-like I-V curve, while the other two branch combinations are optically inactive and show linear ohmic I-V curves. The photoresponse includes a zero-bias photocurrent from the active branch combination. Responsivity of ≈1.6 mA/W has been observed from a single Y-CNT at a moderate bias of 150 mV with an illumination of wavelength 488 nm. The photoresponse experiment allows us to understand the nature of internal connections in the Y-CNT. Analysis of data locates the region of photoactivity at the junction of only two branches and only the combination of these two branches (and not individual branches) exhibits photoresponse upon illumination. A model calculation based on back-to-back Schottky-type junctions at the branch connection explains the I-V data in the dark and shows that under illumination the barriers at the contacts become lowered due to the presence of photogenerated carriers. PMID:27379988

  5. Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes.

    PubMed

    Gao, Jia; Loo, Yueh-Lin

    2014-06-14

    In this study, we have elucidated the interactions between ozone and carbon nanotubes by monitoring the characteristics of field-effect transistors based on polymer-sorted, large-diameter semiconducting carbon nanotubes. The drain-source current of these transistors initially increases with ozone exposure and then it progressively decreases with increasing exposure beyond 3 min. This non-monotonic dependence of the drain-source current can be ascribed to two competing processes. At short ozone exposure, p-doping of carbon nanotubes dominates; the drain-source current thus increases as a result of increasing hole concentration. This effect is most evidenced in a progressive threshold voltage shift towards positive voltages with increasing exposure to ozone. At extended ozone exposure, chemical oxidation of carbon nanotubes instead dominates. The drain-source current decreases as a result of decreasing hole mobility. This effect manifests itself in a monotonic decrease in the mobility of these devices as a function of ozone exposure. PMID:24760174

  6. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.

    PubMed

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-28

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption. PMID:26847814

  7. Tuning the redox activity of encapsulated metal clusters via the metallic and semiconducting character of carbon nanotubes

    PubMed Central

    Zhang, Fan; Pan, Xiulian; Hu, Yongfeng; Yu, Liang; Chen, Xiaoqi; Jiang, Peng; Zhang, Hongbo; Deng, Shibin; Zhang, Jin; Bolin, Trudy B.; Zhang, Shuo; Huang, Yuying; Bao, Xinhe

    2013-01-01

    We demonstrate that reactions confined within single-walled carbon nanotube (SWCNT) channels are modulated by the metallic and semiconducting character of the hosts. In situ Raman and X-ray absorption near-edge structure spectroscopies provide complementary information about the electronic state of carbon nanotubes and the encapsulated rhenium species, which reveal electronic interactions between encapsulated species and nanotubes. More electrons are transferred from metallic tubes (m-SWCNTs) to oxidic rhenium clusters, leading to a lower valence state rhenium oxide than that in semiconducting tubes (s-SWCNTs). Reduction in 3.5% (vol/vol) H2/Ar leads to weakened host–guest electronic interaction. The high valence state Re within s-SWCNTs is more readily reduced when raising the temperature, whereas only a sluggish change is observed for Re within m-SWCNTs. Only at 400 °C does Re reach a similar electronic state (mixture of Re0 and Re4+) in both types of tubes. Subsequent oxidation in 1% O2/Ar does not show changes for Re in s-SWCNTs up to 200 °C. In comparison, m-SWCNTs facilitate the oxidation of reduced rhenium (160 °C). This can be exploited for rational design of active catalysts with stable species as a desired valence state can be obtained by selecting specific-type SWCNTs and a controlled thermal treatment. These results also provide a chemical approach to modulate reversibly the electronic structure of SWCNTs without damaging the sidewalls of SWCNTs. PMID:23980145

  8. A phenomenological model for selective growth of semiconducting single-walled carbon nanotubes based on catalyst deactivation

    NASA Astrophysics Data System (ADS)

    Sakurai, Shunsuke; Yamada, Maho; Sakurai, Hiroko; Sekiguchi, Atsuko; Futaba, Don N.; Hata, Kenji

    2015-12-01

    A method for the selective semiconducting single-walled carbon nanotube (SWCNT) growth over a continuous range from 67% to 98%, within the diameter range of 0.8-1.2 nm, by the use of a ``catalyst conditioning process'' prior to growth is reported. Continuous control revealed an inverse relationship between the selectivity and the yield as evidenced by a 1000-times difference in yield between the highest selectivity and non-selectivity. Further, these results show that the selectivity is highly sensitive to the presence of a precise concentration of oxidative and reductive gases (i.e. water and hydrogen), and the highest selectivity occurred along the border between the conditions suitable for high yield and no-growth. Through these results, a phenomenological model has been constructed to explain the inverse relationship between yield and selectivity based on catalyst deactivation. We believe our model to be general, as the fundamental mechanisms limiting selective semiconducting SWCNT growth are common to the previous reports of limited yield.A method for the selective semiconducting single-walled carbon nanotube (SWCNT) growth over a continuous range from 67% to 98%, within the diameter range of 0.8-1.2 nm, by the use of a ``catalyst conditioning process'' prior to growth is reported. Continuous control revealed an inverse relationship between the selectivity and the yield as evidenced by a 1000-times difference in yield between the highest selectivity and non-selectivity. Further, these results show that the selectivity is highly sensitive to the presence of a precise concentration of oxidative and reductive gases (i.e. water and hydrogen), and the highest selectivity occurred along the border between the conditions suitable for high yield and no-growth. Through these results, a phenomenological model has been constructed to explain the inverse relationship between yield and selectivity based on catalyst deactivation. We believe our model to be general, as the

  9. Ab initio nonadiabatic molecular dynamics of the ultrafast excitation energy transfer in small semiconducting carbon nanotube aggregates

    NASA Astrophysics Data System (ADS)

    Postupna, Olena; Long, Run; Prezhdo, Oleg

    2012-02-01

    Outstanding physical properties of carbon nanotubes (CNTs), such as well-defined optical resonance and ultrafast nonlinear response, result in CNTs gaining popularity in academic and industrial endeavors as potential effective energy generating devices. Following recent experiments on ultrafast excitation energy transfer in small semiconducting carbon nanotube aggregates [1], we report results of ab initio nonadiabatic molecular dynamics simulation of the energy transfer taking place in two carbon nanotube systems. We investigate the energy transfer between (8,4) and (10,0) CNTs, as well as (8,4) and (13,0) CNTs. In both cases, the CNTs are orthogonal to each other. Luer et al. in [1] elucidate the second excitonic transitions followed by fast intratube relaxation and energy transfer from the (8,4) CNT toward other acceptor tubes. Our project aims to provide a better understanding of the energy transfer mechanism in the given systems, which should foster development of a theory for the electronic structure and dynamics of CNT networks, hence enhancing their tailoring and application in the future. References 1.Larry Luer, Jared Crochet, Tobias Hertel, Giulio Cerullo, Gugliermo Lanzani. ACSNano. Vol.4, No. 7, 4265-4273

  10. Effects of the chemical structure of polyfluorene on selective extraction of semiconducting single-walled carbon nanotubes.

    PubMed

    Fukumaru, Takahiro; Toshimitsu, Fumiyuki; Fujigaya, Tsuyohiko; Nakashima, Naotoshi

    2014-06-01

    The selective recognition/extraction of semiconducting (sem)- and metallic (met)-single-walled carbon nanotubes (SWNTs) is still a great challenge in the science and technology of carbon nanotubes because their selective synthesis is still difficult. Poly(9,9-dioctyl-fluorene-2,7-diyl) (2C8-PF) and its derivatives are widely used polymers in carbon nanotube science and technology since they only extract sem-SWNTs from the mixture of sem-/met-SWNTs, while the separation mechanism is still unclear. In this study, we focus on the alkyl chain number on the polyfluorenes (PFs) to understand the mechanism for selective recognition. Here we describe the synthesis of mono-octyl moiety-carrying polyfluorene (poly(9-octyl-9H-fluorene-2,7-diyl), C8H-PF), and characterized its selective SWNT recognition/extraction ability, and found that the C8H-PF solubilized sem-SWNTs with a diameter of 0.9-1.1 nm, whose behavior is similar to that of 2C8-PF. In addition, C8H-PF selectively extracted sem-SWNTs with larger diameters (average diameter = 1.4 nm), whose behavior is different from that of 2C8-PF. Molecular mechanics simulations were carried out to understand such specific solubilization behavior. This study provides an insight into the design and synthesis of PF-based polymers and copolymers that exhibit efficient selective sem-SWNT recognition/extraction ability and their applications.

  11. Extremely bendable, high-performance integrated circuits using semiconducting carbon nanotube networks for digital, analog, and radio-frequency applications.

    PubMed

    Wang, Chuan; Chien, Jun-Chau; Takei, Kuniharu; Takahashi, Toshitake; Nah, Junghyo; Niknejad, Ali M; Javey, Ali

    2012-03-14

    Solution-processed thin-films of semiconducting carbon nanotubes as the channel material for flexible electronics simultaneously offers high performance, low cost, and ambient stability, which significantly outruns the organic semiconductor materials. In this work, we report the use of semiconductor-enriched carbon nanotubes for high-performance integrated circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The as-obtained thin-film transistors (TFTs) exhibit highly uniform device performance with on-current and transconductance up to 15 μA/μm and 4 μS/μm. By performing capacitance-voltage measurements, the gate capacitance of the nanotube TFT is precisely extracted and the corresponding peak effective device mobility is evaluated to be around 50 cm(2)V(-1)s(-1). Using such devices, digital logic gates including inverters, NAND, and NOR gates with superior bending stability have been demonstrated. Moreover, radio frequency measurements show that cutoff frequency of 170 MHz can be achieved in devices with a relatively long channel length of 4 μm, which is sufficient for certain wireless communication applications. This proof-of-concept demonstration indicates that our platform can serve as a foundation for scalable, low-cost, high-performance flexible electronics.

  12. A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mizutani, Takashi; Ohnaka, Hirofumi; Okigawa, Yuki; Kishimoto, Shigeru; Ohno, Yutaka

    2009-10-01

    The electrical properties of carbon nanotubes (CNTs) grown by plasma-enhanced chemical vapor deposition (PECVD) have been studied by measuring the I-V characteristics of many CNT-field effect transistors. The ratio of modulation current to total current was as high as 97%, with a small nondepletable OFF current component. This suggests that CNTs with semiconducting behavior were preferentially grown in the PECVD process. Raman scattering spectroscopy of the PECVD-grown CNTs, however, revealed several peaks of the radial breezing mode, which correspond to the presence of metallic CNTs. Scanning gate microscopy measurement of the CNT-FET with an ON/OFF ratio of 100 revealed the existence of a potential barrier in the metallic CNTs. These results suggest that observation of the preferential growth of CNTs with semiconducting behavior in the CNT-FETs fabricated via the present PECVD process results from the opening of the band gap due to defects caused by irradiation damage during the PECVD growth.

  13. Steiner minimal trees—the final destinations for lipid nanotube networks with three-way junctions

    NASA Astrophysics Data System (ADS)

    Yin, YaJun; Wu, JiYe; Yin, Jie; Fan, QinShan

    2011-04-01

    Through the combination of the minimum energy principle in physics and the Steiner minimal tree (SMT) theory in geometry, this paper proves a universal law for lipid nanotube networks (LNNs): at stable equilibrium state, the network of three-way lipid nanotube junctions is equivalent to a SMT. Besides, an arbitrary (usually non-equilibrium) network of lipid nanotube junctions may fission into a SMT through diffusions and dynamic self-organizations of lipid molecules. Potential applications of the law to the micromanipulations of LNNs are presented.

  14. Realistic-contact-induced enhancement of rectifying in carbon-nanotube/graphene-nanoribbon junctions

    SciTech Connect

    Zhang, Xiang-Hua; Li, Xiao-Fei; Wang, Ling-Ling Xu, Liang; Luo, Kai-Wu

    2014-03-10

    Carbon-nanotube/graphene-nanoribbon junctions were recently fabricated by the controllable etching of single-walled carbon-nanotubes [Wei et al., Nat. Commun. 4, 1374 (2013)] and their electronic transport properties were studied here. First principles results reveal that the transmission function of the junctions show a heavy dependence on the shape of contacts, but rectifying is an inherent property which is insensitive to the details of contacts. Interestingly, the rectifying ratio is largely enhanced in the junction with a realistic contact and the enhancement is insensitive to the details of contact structures. The stability of rectifying suggests a significant feasibility to manufacture realistic all-carbon rectifiers in nanoelectronics.

  15. Transition from direct tunneling to field emission in carbon nanotube intramolecular junctions

    NASA Astrophysics Data System (ADS)

    Chiu, Po-Wen; Roth, Siegmar

    2008-01-01

    Transport measurements through metal-semiconductor carbon nanotube intramolecular junctions were carried out at high gate voltages in which regime the influence of Schottky barrier to charge transport is weak. The I-Vds curves exhibit an inflection point in the form of ln(I /Vds2)-1/Vds, showing a transition of transport mechanism from direct tunneling to field emission. The findings are interpreted in terms of quantum tunneling through a rectanglelike barrier at the junction, with a barrier width of ˜4nm, in good agreement with that observed on pentagon-heptagon defects at nanotube junctions via scanning tunneling spectroscopy.

  16. Metallic and semiconducting carbon nanotubes separation using an aqueous two-phase separation technique: a review.

    PubMed

    Tang, Malcolm S Y; Ng, Eng-Poh; Juan, Joon Ching; Ooi, Chien Wei; Ling, Tau Chuan; Woon, Kai Lin; Show, Pau Loke

    2016-08-19

    It is known that carbon nanotubes show desirable physical and chemical properties with a wide array of potential applications. Nonetheless, their potential has been hampered by the difficulties in acquiring high purity, chiral-specific tubes. Considerable advancement has been made in terms of the purification of carbon nanotubes, for instance chemical oxidation, physical separation, and myriad combinations of physical and chemical methods. The aqueous two-phase separation technique has recently been demonstrated to be able to sort carbon nanotubes based on their chirality. The technique requires low cost polymers and salt, and is able to sort the tubes based on their diameter as well as metallicity. In this review, we aim to provide a review that could stimulate innovative thought on the progress of a carbon nanotubes sorting method using the aqueous two-phase separation method, and present possible future work and an outlook that could enhance the methodology. PMID:27396920

  17. Metallic and semiconducting carbon nanotubes separation using an aqueous two-phase separation technique: a review

    NASA Astrophysics Data System (ADS)

    Tang, Malcolm S. Y.; Ng, Eng-Poh; Juan, Joon Ching; Ooi, Chien Wei; Ling, Tau Chuan; Woon, Kai Lin; Loke Show, Pau

    2016-08-01

    It is known that carbon nanotubes show desirable physical and chemical properties with a wide array of potential applications. Nonetheless, their potential has been hampered by the difficulties in acquiring high purity, chiral-specific tubes. Considerable advancement has been made in terms of the purification of carbon nanotubes, for instance chemical oxidation, physical separation, and myriad combinations of physical and chemical methods. The aqueous two-phase separation technique has recently been demonstrated to be able to sort carbon nanotubes based on their chirality. The technique requires low cost polymers and salt, and is able to sort the tubes based on their diameter as well as metallicity. In this review, we aim to provide a review that could stimulate innovative thought on the progress of a carbon nanotubes sorting method using the aqueous two-phase separation method, and present possible future work and an outlook that could enhance the methodology.

  18. Photoinduced spontaneous free-carrier generation in semiconducting single-walled carbon nanotubes

    PubMed Central

    Park, Jaehong; Reid, Obadiah G.; Blackburn, Jeffrey L.; Rumbles, Garry

    2015-01-01

    Strong quantum confinement and low dielectric screening impart single-walled carbon nanotubes with exciton-binding energies substantially exceeding kBT at room temperature. Despite these large binding energies, reported photoluminescence quantum yields are typically low and some studies suggest that photoexcitation of carbon nanotube excitonic transitions can produce free charge carriers. Here we report the direct measurement of long-lived free-carrier generation in chirality-pure, single-walled carbon nanotubes in a low dielectric solvent. Time-resolved microwave conductivity enables contactless and quantitative measurement of the real and imaginary photoconductance of individually suspended nanotubes. The conditions of the microwave conductivity measurement allow us to avoid the complications of most previous measurements of nanotube free-carrier generation, including tube–tube/tube–electrode contact, dielectric screening by nearby excitons and many-body interactions. Even at low photon fluence (approximately 0.05 excitons per μm length of tubes), we directly observe free carriers on excitation of the first and second carbon nanotube exciton transitions. PMID:26531728

  19. Photoinduced Spontaneous Free-Carrier Generation in Semiconducting Single-Walled Carbon Nanotubes

    SciTech Connect

    Park, Jaehong; Reid, Obadiah G.; Blackburn, Jeffrey L.; Rumbles, Garry

    2015-11-04

    The strong quantum confinement and low dielectric screening impart single-walled carbon nanotubes with exciton-binding energies substantially exceeding kBT at room temperature. Despite these large binding energies, reported photoluminescence quantum yields are typically low and some studies suggest that photoexcitation of carbon nanotube excitonic transitions can produce free charge carriers. Here we report the direct measurement of long-lived free-carrier generation in chirality-pure, single-walled carbon nanotubes in a low dielectric solvent. Time-resolved microwave conductivity enables contactless and quantitative measurement of the real and imaginary photoconductance of individually suspended nanotubes. We found that the conditions of the microwave conductivity measurement allow us to avoid the complications of most previous measurements of nanotube free-carrier generation, including tube–tube/tube–electrode contact, dielectric screening by nearby excitons and many-body interactions. At low photon fluence (approximately 0.05 excitons per μm length of tubes), we directly observe free carriers on excitation of the first and second carbon nanotube exciton transitions.

  20. Photoinduced Spontaneous Free-Carrier Generation in Semiconducting Single-Walled Carbon Nanotubes

    DOE PAGES

    Park, Jaehong; Reid, Obadiah G.; Blackburn, Jeffrey L.; Rumbles, Garry

    2015-11-04

    The strong quantum confinement and low dielectric screening impart single-walled carbon nanotubes with exciton-binding energies substantially exceeding kBT at room temperature. Despite these large binding energies, reported photoluminescence quantum yields are typically low and some studies suggest that photoexcitation of carbon nanotube excitonic transitions can produce free charge carriers. Here we report the direct measurement of long-lived free-carrier generation in chirality-pure, single-walled carbon nanotubes in a low dielectric solvent. Time-resolved microwave conductivity enables contactless and quantitative measurement of the real and imaginary photoconductance of individually suspended nanotubes. We found that the conditions of the microwave conductivity measurement allow us tomore » avoid the complications of most previous measurements of nanotube free-carrier generation, including tube–tube/tube–electrode contact, dielectric screening by nearby excitons and many-body interactions. At low photon fluence (approximately 0.05 excitons per μm length of tubes), we directly observe free carriers on excitation of the first and second carbon nanotube exciton transitions.« less

  1. Effect of Alignment on Transport Properties of Carbon Nanotube/Metallic Junctions

    NASA Technical Reports Server (NTRS)

    Wincheski, Buzz; Namkung, Min; Smits, Jan; Williams, Phillip; Harvey, Robert

    2003-01-01

    Ballistic and spin coherent transport in single walled carbon nanotubes (SWCNT) are predicted to enable high sensitivity single-nanotube devices for strain and magnetic field sensing. Based upon these phenomena, electron beam lithography procedures have been developed to study the transport properties of purified HiPCO single walled carbon nanotubes for development into sensory materials for nondestructive evaluation. Purified nanotubes are dispersed in solvent suspension and then deposited on the device substrate before metallic contacts are defined and deposited through electron beam lithography. This procedure produces randomly dispersed ropes, typically 2 - 20 nm in diameter, of single walled carbon nanotubes. Transport and scanning probe microscopy studies have shown a good correlation between the junction resistance and tube density, alignment, and contact quality. In order to improve transport properties of the junctions a technique has been developed to align and concentrate nanotubes at specific locations on the substrate surface. Lithographic techniques are used to define local areas where high frequency electric fields are to be concentrated. Application of the fields while the substrate is exposed to nanotube-containing solution results in nanotube arrays aligned with the electric field lines. A second electron beam lithography layer is then used to deposit metallic contacts across the aligned tubes. Experimental measurements are presented showing the increased tube alignment and improvement in the transport properties of the junctions.

  2. Copper chloride functionalization of semiconducting and metallic fractions of single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Eremina, Valentina A.; Fedotov, Pavel V.; Obraztsova, Elena D.

    2016-03-01

    In this work, a separation of arc-grown single-walled carbon nanotubes (SWNTs) over conductivity type has been performed with an aqueous two-phase separation method. The separated fractions were used to synthesize copper chloride (CuCl) at SWNTs hybrid materials. These nanohybrids were studied using UV-vis-NIR optical absorption and Raman techniques. The changes in electronic and optical properties of functionalized SWNTs were revealed. A significant p-type doping of SWNTs by CuCl was considered as a main reason for modification of nanotube optical properties.

  3. Sorting of large-diameter semiconducting carbon nanotube and printed flexible driving circuit for organic light emitting diode (OLED)

    NASA Astrophysics Data System (ADS)

    Xu, Wenya; Zhao, Jianwen; Qian, Long; Han, Xianying; Wu, Liangzhuan; Wu, Weichen; Song, Minshun; Zhou, Lu; Su, Wenming; Wang, Chao; Nie, Shuhong; Cui, Zheng

    2014-01-01

    A novel approach was developed to sort a large-diameter semiconducting single-walled carbon nanotube (sc-SWCNT) based on copolyfluorene derivative with high yield. High purity sc-SWCNTs inks were obtained by wrapping arc-discharge SWCNTs with poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) aided by sonication and centrifugation in tetrahydrofuran (THF). The sorted sc-SWCNT inks and nanosilver inks were used to print top-gated thin-film transistors (TFTs) on flexible substrates with an aerosol jet printer. The printed TFTs demonstrated low operating voltage, small hysteresis, high on-state current (up to 10-3 A), high mobility and on-off ratio. An organic light emitting diode (OLED) driving circuit was constructed based on the printed TFTs, which exhibited high on-off ratio up to 104 and output current up to 3.5 × 10-4 A at Vscan = -4.5 V and Vdd = 0.8 V. A single OLED was switched on with the driving circuit, showing the potential as backplanes for active matrix OLED applications.A novel approach was developed to sort a large-diameter semiconducting single-walled carbon nanotube (sc-SWCNT) based on copolyfluorene derivative with high yield. High purity sc-SWCNTs inks were obtained by wrapping arc-discharge SWCNTs with poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) aided by sonication and centrifugation in tetrahydrofuran (THF). The sorted sc-SWCNT inks and nanosilver inks were used to print top-gated thin-film transistors (TFTs) on flexible substrates with an aerosol jet printer. The printed TFTs demonstrated low operating voltage, small hysteresis, high on-state current (up to 10-3 A), high mobility and on-off ratio. An organic light emitting diode (OLED) driving circuit was constructed based on the printed TFTs, which exhibited high on-off ratio up to 104 and output current up to 3.5 × 10-4 A at Vscan = -4.5 V and Vdd = 0.8 V. A single OLED was switched on with the driving

  4. CoPt/CeO2 catalysts for the growth of narrow diameter semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Tang, Lei; Li, Taotao; Li, Chaowei; Ling, Lin; Zhang, Kai; Yao, Yagang

    2015-11-01

    For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, effective techniques for the growth of semiconducting SWNTs (s-SWNTs) with a specific diameter are still a great challenge. Herein, we report a facile strategy for the selective growth of narrow diameter distributed s-SWNTs using CoPt/CeO2 catalysts. The addition of Pt into a Co catalyst dramatically reduces the diameter distributions and even the chirality distributions of the as-grown SWNTs. Oxygen vacancies that are provided by mesoporous CeO2 are responsible for creating an oxidative environment to in situ etch metallic SWNTs (m-SWNTs). Atomic force microscope (AFM) and Raman spectroscopy characterizations indicate a narrow diameter distribution of 1.32 +/- 0.03 nm and the selective growth of s-SWNTs to 93%, respectively. In addition, electronic transport measurements also confirm that the Ion/Ioff ratio is mainly in the order of ~103. This work provides an effective strategy for the facile fabrication of narrow diameter distributed s-SWNTs, which will be beneficial to fundamental research and the broad application of SWNTs for future nanoelectronics.For the application of single-walled carbon nanotubes (SWNTs) in nanoelectronic devices, effective techniques for the growth of semiconducting SWNTs (s-SWNTs) with a specific diameter are still a great challenge. Herein, we report a facile strategy for the selective growth of narrow diameter distributed s-SWNTs using CoPt/CeO2 catalysts. The addition of Pt into a Co catalyst dramatically reduces the diameter distributions and even the chirality distributions of the as-grown SWNTs. Oxygen vacancies that are provided by mesoporous CeO2 are responsible for creating an oxidative environment to in situ etch metallic SWNTs (m-SWNTs). Atomic force microscope (AFM) and Raman spectroscopy characterizations indicate a narrow diameter distribution of 1.32 +/- 0.03 nm and the selective growth of s-SWNTs to 93%, respectively. In addition

  5. A rational design for the separation of metallic and semiconducting single-walled carbon nanotubes using a magnetic field

    NASA Astrophysics Data System (ADS)

    Luo, Chengzhi; Wan, Da; Jia, Junji; Li, Delong; Pan, Chunxu; Liao, Lei

    2016-06-01

    The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m-SWNTs on the substrate and this model shows a good match with the experimental data. Furthermore, our rational design also provides a new avenue for the growth of SWNTs with specific chirality and manipulated arrangement due to the difference of magnetic susceptibilities between different diameters, chiralities, and types.The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm2 V-1 s-1 and an on/off ratio of 106. We also established a model to quantitatively calculate the percentage of m

  6. Band Structures of Periodic Carbon Nanotube Junctions and Their Symmetries Analyzed by the Effective Mass Approximation

    NASA Astrophysics Data System (ADS)

    Tamura, Ryo; Tsukada, Masaru

    1999-03-01

    The band structures of the periodic nanotube junctions are investigated by the effective mass theory and the tight binding model. The periodic junctions are constructed by introducing pairs of a pentagonal defect and a heptagonal defect periodically in the carbon nanotube. We treat the periodic junctions composed by two kinds of metallic nanotubes with almost same radii, the ratio of which is between 0.7 and 1. The discussed energy region is near the undoped Fermi level. The energy bands are expressed with closed analytical forms by the effective mass theory. They are similar to the dispersion relation of Kronig-Penny model and coincide well with the numerical results by the tight binding model. The width of the gap and the band are in inverse proportion to the length of the unit cell. The degeneracy and repulsion between the two bands are determined only from symmetries.

  7. Phonon dephasing and population decay dynamics of the G-band of semiconducting single-wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lee, Young Jong; Parekh, Sapun H.; Fagan, Jeffrey A.; Cicerone, Marcus T.

    2010-10-01

    The dephasing and population decay dynamics of optical phonons are studied for semiconducting single-wall carbon nanotubes (SWCNTs) using broadband time-resolved coherent anti-Stokes Raman scattering and time-resolved incoherent anti-Stokes Raman scattering. By simply adjusting the spectral bandwidth of a continuum pulse, we are able to directly measure both the total dephasing time, T2 , and the population decay time, T1 , of the G-band sequentially in the same sample, which allows for one to exclude artifacts due to comparison of dynamics values measured with different sample conditions and different measurement schemes. The values of T1 and T2/2 are presented for two different SWCNT samples: bundles in a film on glass and a dispersion in water. While the measured T1 values are similar for the two samples, the pure dephasing times, T2∗/2 , determined from the T2/2 and T1 measurements are faster in bundled SWCNTs than in isolated dispersion. This suggests that neighboring tubes in the film perturbs the vibrational mode more strongly than surrounding surfactants and that the pure dephasing dynamics is more sensitive to the perturbation.

  8. A rational design for the separation of metallic and semiconducting single-walled carbon nanotubes using a magnetic field.

    PubMed

    Luo, Chengzhi; Wan, Da; Jia, Junji; Li, Delong; Pan, Chunxu; Liao, Lei

    2016-07-14

    The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm(2) V(-1) s(-1) and an on/off ratio of 10(6). We also established a model to quantitatively calculate the percentage of m-SWNTs on the substrate and this model shows a good match with the experimental data. Furthermore, our rational design also provides a new avenue for the growth of SWNTs with specific chirality and manipulated arrangement due to the difference of magnetic susceptibilities between different diameters, chiralities, and types.

  9. Sorting of large-diameter semiconducting carbon nanotube and printed flexible driving circuit for organic light emitting diode (OLED).

    PubMed

    Xu, Wenya; Zhao, Jianwen; Qian, Long; Han, Xianying; Wu, Liangzhuan; Wu, Weichen; Song, Minshun; Zhou, Lu; Su, Wenming; Wang, Chao; Nie, Shuhong; Cui, Zheng

    2014-01-01

    A novel approach was developed to sort a large-diameter semiconducting single-walled carbon nanotube (sc-SWCNT) based on copolyfluorene derivative with high yield. High purity sc-SWCNTs inks were obtained by wrapping arc-discharge SWCNTs with poly[2,7-(9,9-dioctylfluorene)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PFO-DBT) aided by sonication and centrifugation in tetrahydrofuran (THF). The sorted sc-SWCNT inks and nanosilver inks were used to print top-gated thin-film transistors (TFTs) on flexible substrates with an aerosol jet printer. The printed TFTs demonstrated low operating voltage, small hysteresis, high on-state current (up to 10(-3) A), high mobility and on-off ratio. An organic light emitting diode (OLED) driving circuit was constructed based on the printed TFTs, which exhibited high on-off ratio up to 10(4) and output current up to 3.5 × 10(-4) A at V(scan) = -4.5 V and Vdd = 0.8 V. A single OLED was switched on with the driving circuit, showing the potential as backplanes for active matrix OLED applications.

  10. Selective Dispersion of Highly Pure Large-Diameter Semiconducting Carbon Nanotubes by a Flavin for Thin-Film Transistors.

    PubMed

    Park, Minsuk; Kim, Somin; Kwon, Hyeokjae; Hong, Sukhyun; Im, Seongil; Ju, Sang-Yong

    2016-09-01

    Scalable and simple methods for selective extraction of pure, semiconducting (s) single-walled carbon nanotubes (SWNTs) is of profound importance for electronic and photovoltaic applications. We report a new, one-step procedure to obtain respective large-diameter s- and metallic (m)-SWNT enrichment purity in excess of 99% and 78%, respectively, via interaction between the aromatic dispersing agent and SWNTs. The approach utilizes N-dodecyl isoalloxazine (FC12) as a surfactant in conjunction with sonication and benchtop centrifugation methods. After centrifugation, the supernatant is enriched in s-SWNTs with less carbonaceous impurities, whereas precipitate is enhanced in m-SWNTs. In addition, the use of an increased centrifugal force enhances both the purity and population of larger diameter s-SWNTs. Photoinduced energy transfer from FC12 to SWNTs is facilitated by respective electronic level alignment. Owing to its peculiar photoreduction capability, FC12 can be employed to precipitate SWNTs upon UV irradiation and observe absorption of higher optical transitions of SWNTs. A thin-film transistor prepared from a dispersion of enriched s-SWNTs was fabricated to verify electrical performance of the sorted sample and was observed to display p-type conductance with an average on/off ratio over 10(6) and an average mobility over 10 cm(2)/V·s. PMID:27538495

  11. Intra- and inter-tube exciton relaxation dynamics in high purity semiconducting and metallic single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Ichida, Masao; Saito, Shingo; Miyata, Yasumitsu; Yanagi, Kazuhiro; Kataura, Hiromichi; Ando, Hiroaki

    2013-02-01

    We have measured the exciton and carrier dynamics in the high purity semiconducting (S-) and metallic (M-) single-walled carbon nanotubes (SWNTs) in the isolated and aggregated (bundled) forms. The exciton relaxation decay times are measured by using the pump-probe spectroscopy. For bundled samples, the relaxation time becomes shorter than that for isolated SWNTs sample, because of the existence of inter-tube relaxation. We estimate the relaxation rates from S-SWNT to S-SWNT and S-SWNT to M-SWNT using the decay times for isolated SWNTs, high purity S-SWNTs bundle, and doped S-SWNTs in high purity M-SWNTs bundle. For S-SWNTs, inter-tube relaxation plays an important role in the relaxation dynamics. However, for M-SWNTs, the inter-tube relaxation is not so important, and the transition energy and intensity of exciton in M-SWNTs is strongly affected by the photoexcited carriers which plays like as photo doping.

  12. A rational design for the separation of metallic and semiconducting single-walled carbon nanotubes using a magnetic field.

    PubMed

    Luo, Chengzhi; Wan, Da; Jia, Junji; Li, Delong; Pan, Chunxu; Liao, Lei

    2016-07-14

    The separation of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) without causing contamination and damage is a major challenge for SWNT-based devices. As a facile and nondestructive tool, the use of a magnetic field could be an ideal strategy to separate m-/s-SWNTs, based on the difference of magnetic susceptibilities. Here, we designed a novel magnetic field-assisted floating catalyst chemical vapor deposition system to separate m-/s-SWNTs. Briefly, m-SWNTs are attracted toward the magnetic pole, leaving s-SWNTs on the substrate. By using this strategy, s-SWNTs with a purity of 99% could be obtained, which is enough to construct high-performance transistors with a mobility of 230 cm(2) V(-1) s(-1) and an on/off ratio of 10(6). We also established a model to quantitatively calculate the percentage of m-SWNTs on the substrate and this model shows a good match with the experimental data. Furthermore, our rational design also provides a new avenue for the growth of SWNTs with specific chirality and manipulated arrangement due to the difference of magnetic susceptibilities between different diameters, chiralities, and types. PMID:27315328

  13. Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.

    PubMed

    Cao, Yu; Brady, Gerald J; Gui, Hui; Rutherglen, Chris; Arnold, Michael S; Zhou, Chongwu

    2016-07-26

    In this paper, we report record radio frequency (RF) performance of carbon nanotube transistors based on combined use of a self-aligned T-shape gate structure, and well-aligned, high-semiconducting-purity, high-density polyfluorene-sorted semiconducting carbon nanotubes, which were deposited using dose-controlled, floating evaporative self-assembly method. These transistors show outstanding direct current (DC) performance with on-current density of 350 μA/μm, transconductance as high as 310 μS/μm, and superior current saturation with normalized output resistance greater than 100 kΩ·μm. These transistors create a record as carbon nanotube RF transistors that demonstrate both the current-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) greater than 70 GHz. Furthermore, these transistors exhibit good linearity performance with 1 dB gain compression point (P1dB) of 14 dBm and input third-order intercept point (IIP3) of 22 dBm. Our study advances state-of-the-art of carbon nanotube RF electronics, which have the potential to be made flexible and may find broad applications for signal amplification, wireless communication, and wearable/flexible electronics. PMID:27327074

  14. A Comprehensive Numerical Investigation on the Mechanical Properties of Hetero-Junction Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Ali, Ghavamian; Andreas, Öchsner

    2015-08-01

    A set of forty-three hetero-junction CNTs, made of forty-four homogeneous carbon nanotubes of different chiralities and configurations with all possible hetero-connection types, were numerically simulated, based on the finite element method in a commercial finite element software and their Young's and shear moduli, and critical buckling loads were obtained and evaluated under the tensile, torsional and buckling loads with an assumption of linear elastic deformation and also compared with each other. The comparison of the linear elastic behavior of hetero-junction CNTs and their corresponding fundamental tubes revealed that the size, type of the connection, and the bending angle in the structure of hetero-junction CNTs considerably influences the mechanical properties of these hetero-structures. It was also discovered that the Stone-Wales defect leads to lower elastic and torsional strength of hetero-junction CNTs when compared to homogeneous CNTs. However, the buckling strength of the hetero-junction CNTs was found to lie in the range of the buckling strength of their corresponding fundamental tubes. It was also determined that the shear modulus of hetero-junction carbon nanotubes generally tends to be closer to the shear modulus of their wider fundamental tubes while critical buckling loads of these heterostructures seem to be closer to critical buckling loads of their thinner fundamental tubes. The evaluation of the elastic properties of hetero-junction carbon nanotubes showed that among the hetero-junction models, those with armchair-armchair and zigzag-zigzag kinks have the highest elastic modulus while the models with armchair-zigzag connections show the lowest elastic stiffness. The results from torsion tests also revealed the fact that zigzag-zigzag and armchair-zigzag hetero-junction carbon nanotubes have the highest and the lowest shear modulus, respectively. Finally, it was observed that the highest critical buckling loads belong to armchair

  15. High Bias Characteristics of Individual, Suspended Carbon Nanotube p-n Junction Photodiodes

    NASA Astrophysics Data System (ADS)

    Chang, Shun-Wen; Bergemann, Kevin; Dhall, Rohan; Zimmerman, Jeramy; Forrest, Stephen; Cronin, Stephen

    2013-03-01

    We have recently investigated p-n junction diodes formed by electrostatic doping of individual, suspended, single-walled carbon nanotubes (CNTs) using two gate electrodes positioned beneath a free standing nanotube that bridges source and drain electrodes. The electrostatic field imposed by the two gates polarizes the nanotube along its length, thereby allowing independent control of the ``doping'' in the nanotube without introducing impurities or defect states. These pn-devices exhibit rectifying diode behavior and finite photoresponse under illumination. Several interesting phenomena are observed at high bias that arise from Schottky contacts formed between the nanotube and its metal contact electrodes and electron tunneling between the n- and p-doped regions. A model is developed explaining this behavior showing evidence for plasmon-induced band gap shrinkage with electrostatic doping.

  16. Predicting excitonic gaps of semiconducting single-walled carbon nanotubes from a field theoretic analysis

    NASA Astrophysics Data System (ADS)

    Konik, Robert M.; Sfeir, Matthew Y.; Misewich, James A.

    2015-02-01

    We demonstrate that a nonperturbative framework for the treatment of the excitations of single-walled carbon nanotubes based upon a field theoretic reduction is able to accurately describe experiment observations of the absolute values of excitonic energies. This theoretical framework yields a simple scaling function from which the excitonic energies can be read off. This scaling function is primarily determined by a single parameter, the charge Luttinger parameter of the tube, which is in turn a function of the tube chirality, dielectric environment, and the tube's dimensions, thus expressing disparate influences on the excitonic energies in a unified fashion. We test this theory explicitly on the data reported by Dukovic et al. [Nano Lett. 5, 2314 (2005), 10.1021/nl0518122] and Sfeir et al. [Phys. Rev. B 82, 195424 (2010), 10.1103/PhysRevB.82.195424] and so demonstrate the method works over a wide range of reported excitonic spectra.

  17. Intensity Ratio of Resonant Raman Modes for (n , m) Enriched Semiconducting Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Piao, Yanmei; Simpson, Jeffrey; Streit, Jason; Ao, Geyou; Fagan, Jeffrey; Hight Walker, Angela

    Relative intensities of resonant Raman spectral features, specifically the radial breathing mode (RBM) and G modes, of eleven, chirality-enriched, single-wall carbon nanotube (SWCNT) species were established under second-order optical transition excitation. The results demonstrate a significantly under-recognized complexity in the evaluation of Raman spectra for the assignment of (n , m) population distributions. Strong chiral angle and mod dependencies affect the intensity ratio of the RBM to G modes and can result in misleading interpretations. Furthermore, we report five additional values for chirality dependent G+ and G- Raman peak positions and intensities, supporting accuracy in literature values, and extending the available data to cover more of the small diameter regime by including the first (5,4) second-order, resonance Raman spectra. Together, the Raman spectral library is demonstrated to be sufficient for decoupling multiple species via a spectral fitting process, and enable fundamental characterization even in mixed chiral population samples.

  18. Predicting excitonic gaps of semiconducting single-walled carbon nanotubes from a field theoretic analysis

    SciTech Connect

    Konik, Robert M.; Sfeir, Matthew Y.; Misewich, James A.

    2015-02-17

    We demonstrate that a non-perturbative framework for the treatment of the excitations of single walled carbon nanotubes based upon a field theoretic reduction is able to accurately describe experiment observations of the absolute values of excitonic energies. This theoretical framework yields a simple scaling function from which the excitonic energies can be read off. This scaling function is primarily determined by a single parameter, the charge Luttinger parameter of the tube, which is in turn a function of the tube chirality, dielectric environment, and the tube's dimensions, thus expressing disparate influences on the excitonic energies in a unified fashion. As a result, we test this theory explicitly on the data reported in [NanoLetters 5, 2314 (2005)] and [Phys. Rev. B 82, 195424 (2010)] and so demonstrate the method works over a wide range of reported excitonic spectra.

  19. Predicting excitonic gaps of semiconducting single-walled carbon nanotubes from a field theoretic analysis

    DOE PAGES

    Konik, Robert M.; Sfeir, Matthew Y.; Misewich, James A.

    2015-02-17

    We demonstrate that a non-perturbative framework for the treatment of the excitations of single walled carbon nanotubes based upon a field theoretic reduction is able to accurately describe experiment observations of the absolute values of excitonic energies. This theoretical framework yields a simple scaling function from which the excitonic energies can be read off. This scaling function is primarily determined by a single parameter, the charge Luttinger parameter of the tube, which is in turn a function of the tube chirality, dielectric environment, and the tube's dimensions, thus expressing disparate influences on the excitonic energies in a unified fashion. Asmore » a result, we test this theory explicitly on the data reported in [NanoLetters 5, 2314 (2005)] and [Phys. Rev. B 82, 195424 (2010)] and so demonstrate the method works over a wide range of reported excitonic spectra.« less

  20. Rectifying behavior in nitrogen-doped zigzag single-walled carbon nanotube junctions

    NASA Astrophysics Data System (ADS)

    Zhao, P.; Liu, D. S.; Li, S. J.; Chen, G.

    2012-11-01

    Using first-principles density functional theory and non-equilibrium Green's function formalism for quantum transport calculation, we have investigated the electronic transport properties of (8,0), (9,0) and (13,0) zigzag single-walled carbon nanotube junctions with one undoped and one nitrogen-doped zigzag carbon nanotube electrode. Our results show that the transport properties are strongly dependent on the magnitude of energy gap of carbon nanotube. Large rectifying behavior can be obtained in the junction with large energy gap. The observed rectifying behavior are explained in terms of the evolution of the transmission spectra and energy band structures with applied bias voltage combined with molecular projected self-consistent Hamiltonian eigenstates analysis.

  1. Photophysics of quasi-one-dimensional excitons in pi-conjugated polymers and semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Sheng, Chuanxiang

    In this work we studied the ultrafast dynamics of photoexcitations in pi-conjugated organic semiconductors and semiconducting single-walled carbon nanotubes (S-NTs), using a low-intensity high-repetition rate laser system in the spectral range from 0.13 to 1.05 eV, and high-intensity low-repletion rate laser system in the spectral range from 1.2 to 2.5 eV, in the time domain from 100 fs to 1 ns. We also measured cw photomodulation (PM) spectroscopy of pi-conjugated polymers and photoluminescence (PL) spectra of both polymers and isolated nanotubes. In polymers, we found that excitons are the primary photoexcitations in single polymer chains. However, polarons and polaron pairs may also be photogenerated at early time in films. We consider this process to be extrinsic in nature, namely, dependent on materials properties, temperatures, excitation photon energies, as well as the quality of films. Both annealed and unannealed thin NT films and D2O solutions of isolated NTs were investigated. Various transient photoinduced bleaching (PB) and photoinduced absorption (PA) bands were observed, which also showed photoinduced dichroism and decay together after taking into account the PB spectral shift. The PL emission shows polarization degree. We therefore conclude that the primary photoexcitations in S-NT are excitons that are confined along the NTs. Prom the average PL polarization degree and the transient polarization memory decay, we estimate the PL lifetime in isolated NTs in solution to be of the order of 500 ps, coupling with the minute PL emission quantum efficiency, which indicates weak radiative transition strength. In S-NTs and pi-polymers, the emission spectra relative to the absorption bands are very similar, as well as transient photoinduced absorption bands (PA) with a low-energy PA1 and a higher-energy PA2 in all cases. Theoretical calculations of excited state absorptions within a correlated pi-electron Hamiltonian show the same excitonic energy spectrum

  2. Assembly, physics, and application of highly electronic-type purified semiconducting carbon nanotubes in aligned array field effect transistors and photovoltaics

    NASA Astrophysics Data System (ADS)

    Arnold, Michael

    2015-03-01

    Recent advances in (1) achieving highly monodisperse semiconducting carbon nanotubes without problematic metallic nanotubes and (2) depositing these nanotubes into useful, organized arrays and assemblies on substrates have created new opportunities for studying the physics of these one-dimensional conductors and for applying them in electronics and photonics technologies. In this talk, I will present on two topics that are along these lines. In the first, we have pioneered a scalable approach for depositing aligned arrays of ultrahigh purity semiconducting SWCNTs (prepared using polyfluorene-derivatives) called floating evaporative self-assembly (FESA). FESA is exploited to create FETs with exceptionally high combined on-conductance and on-off ratio of 261 μS/ μm and 2 x105, respectively, for a channel length of 240 nm. This is 1400 x greater on-off ratio than SWCNT FETs fabricated by other methods, at comparable on-conductance per width of 250 μS/ μm, and 30-100 x greater on-conductance per width, at comparable on-off ratio of 105-107. In the second, we have discovered how to efficiently harvest photons using semiconducting SWCNTs by driving the dissociation of excitons using donor/acceptor heterojunctions. The flow of energy in SWCNT films occurs across a complex energy landscape, temporally resolved using two-dimensional white light ultrafast spectroscopy. We have demonstrated simple solar cells driven by SWCNT excitons, based on bilayers between C60 and ultrathin (5 nm) films of SWCNTs that achieve a 1% solar power conversion efficiency (7% at the bandgap). High internal quantum efficiency indicates that future blended or multijunction cells exploiting multiple layers will be many times more efficient.

  3. Is there a Difference in Van Der Waals Interactions between Rare Gas Atoms Adsorbed on Metallic and Semiconducting Single-Walled Carbon Nanotubes?

    SciTech Connect

    Chen, De-Li; Mandeltort, Lynn; Saidi, Wissam A.; Yates, John T.; Cole, Milton W.; Johnson, J. Karl

    2013-03-01

    Differences in polarizabilities of metallic (M) and semiconducting (S) single-walled carbon nanotubes (SWNTs) might give rise to differences in adsorption potentials. We show from experiments and van der Waals-corrected density functional theory (DFT) that binding energies of Xe adsorbed on M- and S-SWNTs are nearly identical. Temperature programmed desorption of Xe on purified M- and S-SWNTs give similar peak temperatures, indicating that desorption kinetics and binding energies are independent of the type of SWNT. Binding energies computed from vdW-corrected DFT are in good agreement with experiments.

  4. Role of inter-tube coupling and quantum interference on electrical transport in carbon nanotube junctions

    NASA Astrophysics Data System (ADS)

    Tripathy, Srijeet; Bhattacharyya, Tarun Kanti

    2016-09-01

    Due to excellent transport properties, Carbon nanotubes (CNTs) show a lot of promise in sensor and interconnect technology. However, recent studies indicate that the conductance in CNT/CNT junctions are strongly affected by the morphology and orientation between the tubes. For proper utilization of such junctions in the development of CNT based technology, it is essential to study the electronic properties of such junctions. This work presents a theoretical study of the electrical transport properties of metallic Carbon nanotube homo-junctions. The study focuses on discerning the role of inter-tube interactions, quantum interference and scattering on the transport properties on junctions between identical tubes. The electronic structure and transport calculations are conducted with an Extended Hückel Theory-Non Equilibrium Green's Function based model. The calculations indicate conductance to be varying with a changing crossing angle, with maximum conductance corresponding to lattice registry, i.e. parallel configuration between the two tubes. Further calculations for such parallel configurations indicate onset of short and long range oscillations in conductance with respect to changing overlap length. These oscillations are attributed to inter-tube coupling effects owing to changing π orbital overlap, carrier scattering and quantum interference of the incident, transmitted and reflected waves at the inter-tube junction.

  5. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer

    NASA Astrophysics Data System (ADS)

    Kasai, S.; Takahashi, Y. K.; Cheng, P.-H.; Ikhtiar, Ohkubo, T.; Kondou, K.; Otani, Y.; Mitani, S.; Hono, K.

    2016-07-01

    We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm2. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

  6. Ideal dipole approximation fails to predict electronic coupling between semiconducting single wall carbon nanotubes

    SciTech Connect

    Tretiak, Sergei

    2008-01-01

    Single-walled carbon nanotubes (SWNTs) are highly conjugated carbon tubes that are a few nanometers in diameter and can be up to millimeters in length. The excited electronic states of semiconductor-type SWNTs are quasi-1D excitons. It is known that these spatially-extended electronic excitations can migrate among SWNTs that are bundled together, thus quenching the fluorescence owing to the presence of metallic SWNTs. Recent advances in purification and isolation have enabled studies of electronic energy transfer (EET) between SWNTs and molecular chromophores. Here we examine the electronic coupling among SWNTs in order to understand EET involving SWNTs. There are two main difficulties that need to be addressed when studying SWNT EET. The first is to obtain the electronic coupling matrix element that promotes EET. The most common method to calculate the electronic coupling between two molecules is the point dipole approximation (PDA) method, where the electronic coupling is described as the Coulombic interaction between transition dipole moments of D and A. In this approximation, each molecule is represented by a single dipole located at the center of mass for each molecule. It is well known that the PDA method fails at small separations in molecular systems. Owing to the size of SWNTs compared to typical donor-acceptor separations, it is likely that the PDA method will fail. Even when using the PDA method, however, it is difficult to obtain the dipole strength of the transition because the radiative lifetime is obscured by thermal population of dark states in the exciton band. The second difficulty is that there are a few closely spaced states associated with the lowest bright exciton transition (E{sub 11}), and each of these states might act as energy donors or acceptors. Here we will focus on the first of these challenges: the evaluation of electronic couplings between SWNTs, overcoming the limitations of the PDA method. In the last decade, sophisticated quantum

  7. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    NASA Astrophysics Data System (ADS)

    Zhao, Peng; Liu, De-Sheng; Zhang, Ying; Wang, Pei-Ji; Zhang, Zhong

    2011-04-01

    Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  8. Extracting Diameter and Chirality Dependences of Optical and Electronic Properties of Semiconducting Single-Wall Carbon Nanotubes from First-Principles Calculations

    NASA Astrophysics Data System (ADS)

    Capaz, Rodrigo B.; Deslippe, Jack; Louie, Steven G.

    2012-02-01

    First-principles methods based on the combination of density-functional theory (DFT) for ground-state properties, GW approximation for quasiparticle properties and Bethe-Salpeter equation (BSE) for optical properties represent the state-of-art for accurate and reliable calculations of optical and electronic properties of solids and molecules. For semiconducting carbon nanotubes (CNTs), they have been applied successfully to selected small-diameter tubes. In this work, we systematically calculate such properties for all zig-zag semiconducting single-wall carbon nanotubes with diameters ranging from (10,0) to (20,0) CNTs, allowing us to extract in a reliable way the diameter and chirality dependence of many properties, such as: (i) optical transition energies; (ii) quasiparticle band gaps; (iii) exciton binding energies; (iv) bright-dark exciton splittings; (v) excited exciton states properties; (vi) transverse-polarized exciton states properties; (vii) electron and hole effective masses (and therefore excitonic reduced masses). All properties are described with good accuracy by diameter- and chirality-dependent analytical formulas, with parameters extracted from the first-principles calculations.

  9. Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime.

    PubMed

    Che, Yuchi; Badmaev, Alexander; Jooyaie, Alborz; Wu, Tao; Zhang, Jialu; Wang, Chuan; Galatsis, Kosmas; Enaya, Hani A; Zhou, Chongwu

    2012-08-28

    Carbon nanotube RF transistors are predicted to offer good performance and high linearity when operated in the ballistic transport and quantum capacitance regime; however, realization of such transistors has been very challenging. In this paper, we introduce a self-aligned fabrication method for carbon nanotube RF transistors, which incorporate a T-shaped (mushroom-shaped) aluminum gate, with oxidized aluminum as the gate dielectric. In this way, the channel length can be scaled down to 140 nm, which enables quasi-ballistic transport, and the gate dielectric is reduced to 2-3 nm aluminum oxide, leading to quasi-quantum capacitance operation. A current-gain cutoff frequency (f(t)) up to 23 GHz and a maximum oscillation frequency (f(max)) of 10 GHz are demonstrated. Furthermore, the linearity properties of nanotube transistors are characterized by using the 1 dB compression point measurement with positive power gain for the first time, to our knowledge. Our work reveals the importance and potential of separated semiconducting nanotubes for various RF applications.

  10. Recognition and one-pot extraction of right- and left-handed semiconducting single-walled carbon nanotube enantiomers using fluorene-binaphthol chiral copolymers.

    PubMed

    Akazaki, Kojiro; Toshimitsu, Fumiyuki; Ozawa, Hiroaki; Fujigaya, Tsuyohiko; Nakashima, Naotoshi

    2012-08-01

    Synthesized single-walled carbon nanotubes (SWNTs) are mixtures of right- and left-handed helicity and their separation is an essential topic in nanocarbon science. In this paper, we describe the separation of right- and left-handed semiconducting SWNTs from as-produced SWNTs. Our strategy for this goal is simple: we designed copolymers composed of polyfluorene and chiral bulky moieties because polyfluorenes with long alkyl-chains are known to dissolve only semiconducting SWNTs and chiral binaphthol is a so-called BINAP family that possesses a powerful enantiomer sorting capability. In this study, we synthesized 12 copolymers, (9,9-dioctylfluorene-2,7-diyl)x((R)- or (S)-2,2'-dimethoxy-1,1'-binaphthalen-6,6-diyl)y, where x and y are copolymer composition ratios. It was found that, by a simple one-pot sonication method, the copolymers are able to extract either right- or left-handed semiconducting SWNT enantiomers with (6,5)- and (7,5)-enriched chirality. The separated materials were confirmed by circular dichroism, vis-near IR and photoluminescence spectroscopies. Interestingly, the copolymer showed inversion of SWNT enantiomer recognition at higher contents of the chiral binaphthol moiety. Molecular mechanics simulations reveal a cooperative effect between the degree of chirality and copolymer conformation to be responsible for these distinct characteristics of the extractions. This is the first example describing the rational design and synthesis of novel compounds for the recognition and simple sorting of right- and left-handed semiconducting SWNTs with a specific chirality.

  11. Room-temperature resonant tunneling of electrons in carbon nanotube junction quantum wells

    NASA Astrophysics Data System (ADS)

    Biswas, Sujit K.; Schowalter, Leo J.; Jung, Yung Joon; Vijayaraghavan, Aravind; Ajayan, Pulickel M.; Vajtai, Robert

    2005-05-01

    Resonant tunneling structures [M. Bockrath, W. Liang, D. Bozovic, J. H. Hafner, C. B. Lieber, M. Tinkham, and H. Park, Science 291, 283 (2001)], formed between the junction of two single walled nanotubes and the conductive atomic force microscopy tip contact were investigated using current sensing atomic force microscopy. Oscillations in the current voltage characteristics were measured at several positions of the investigated nanotube. The oscillatory behavior is shown to follow a simple quantum mechanical model, dependent on the energy separation in the quantum well formed within the two junctions. Our model shows that these observations seen over several hundreds of nanometers, are possible only if the scattering cross section at defects is small resulting in long phase coherence length, and if the effective mass of the carrier electrons is small. We have calculated the approximate mass of the conduction electrons to be 0.003me.

  12. Photocurrent Quantum Yield in Suspended Carbon Nanotube p-n Junctions.

    PubMed

    Aspitarte, Lee; McCulley, Daniel R; Minot, Ethan D

    2016-09-14

    We study photocurrent generation in individual suspended carbon nanotube p-n junctions using spectrally resolved scanning photocurrent microscopy. Spatial maps of the photocurrent allow us to determine the length of the p-n junction intrinsic region, as well as the role of the n-type Schottky barrier. We show that reverse-bias operation eliminates complications caused by the n-type Schottky barrier and increases the length of the intrinsic region. The absorption cross-section of the CNT is calculated using an empirically verified model, and the effect of substrate reflection is determined using FDTD simulations. We find that the room temperature photocurrent quantum yield is approximately 30% when exciting the carbon nanotube at the S44 and S55 excitonic transitions. The quantum yield value is an order of magnitude larger than previous estimates. PMID:27575386

  13. Intrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions

    NASA Astrophysics Data System (ADS)

    Li, Zheng; Zheng, Jiaxin; Ni, Zeyuan; Quhe, Ruge; Wang, Yangyang; Gao, Zhengxiang; Lu, Jing

    2013-07-01

    We investigated the dependence of the transport properties of heavily doped intratube single-walled carbon nanotube (SWCNT) p-i-n junctions on the length of the intrinsic region by using empirical self-consistent quantum transport simulations. When the length of the intrinsic region is scaled from a few angstroms to over 10 nanometers, the SWCNT p-i-n junction evolves from a tunneling diode with a large negative rectification and large negative differential resistance to one with a large positive rectification (like a conventional positive rectifying diode). The critical length of the intrinsic length is about 8.0 nm. Therefore, one can obtain nanoscale diodes of different performance types by changing the intrinsic region length.We investigated the dependence of the transport properties of heavily doped intratube single-walled carbon nanotube (SWCNT) p-i-n junctions on the length of the intrinsic region by using empirical self-consistent quantum transport simulations. When the length of the intrinsic region is scaled from a few angstroms to over 10 nanometers, the SWCNT p-i-n junction evolves from a tunneling diode with a large negative rectification and large negative differential resistance to one with a large positive rectification (like a conventional positive rectifying diode). The critical length of the intrinsic length is about 8.0 nm. Therefore, one can obtain nanoscale diodes of different performance types by changing the intrinsic region length. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr01462b

  14. Junction-Controlled Elasticity of Single-Walled Carbon Nanotube Dispersions in Acrylic Copolymer Gels and Solutions

    SciTech Connect

    Schoch, Andrew B.; Shull, Kenneth R.; Brinson, L. Catherine

    2008-08-26

    Oscillatory shear rheometry is used to study the mechanical response of single-walled carbon nanotubes dispersed in solutions of acrylic diblock or triblock copolymers in 2-ethyl-1-hexanol. Thermal transitions in the copolymer solutions provide a route for the easy processing of these composite materials, with excellent dispersion of the nanotubes as verified by near-infrared photoluminescence spectroscopy. The nanotube dispersions form elastic networks with properties that are controlled by the junction points between nanotubes, featuring a temperature-dependent elastic response that is controlled by the dynamic properties of the matrix copolymer solution. The data are consistent with the formation of micelle-like aggregates around the nanotubes. At low temperatures the core-forming poly(methyl methacrylate) blocks are glassy, and the overall mechanical response of the composite does not evolve with time. At higher temperatures the enhanced mobility of the core-forming blocks enables the junctions to achieve more intimate nanotube-nanotube contact, and the composite modulus increases with time. These aging effects are observed in both diblock and triblock copolymer solutions but are partially reversed in the triblock solutions by cooling through the gel transition of the triblock copolymer. This result is attributed to the generation of internal stresses during gelation and the ability of these stresses to break or weaken the nanotube junctions.

  15. CoNTub v2.0--algorithms for constructing C3-symmetric models of three-nanotube junctions.

    PubMed

    Melchor, Santiago; Martin-Martinez, Francisco J; Dobado, José A

    2011-06-27

    Here, a method is described for easily building three-carbon nanotube junctions. It allows the geometry to be found and bond connectivity of C(3) symmetric nanotube junctions to be established. Such junctions may present a variable degree of pyramidalization and are composed of three identical carbon nanotubes with arbitrary chirality. From the indices of the target nanotube, applying the formulas of strip algebra, the possible positions of the six defects (heptagonal rings) needed can be found. Given the multiple possibilities that arise for a specific pair of indices, the relation between the macroscopic geometry (interbranch angles, junction size, and pyramidalization) and each specific solution is found. To automate the construction of these structures, we implemented this algorithm with CoNTub software, version 2.0, which is available at ( http://www.ugr.es/local/gmdm/contub2 ). In addition, a classification of three-nanotube junctions, 3TJ, in seven types based on the location of defects has been proposed, i.e. 3TJ(0:0:6), 3TJ(0:1:5), 3TJ(0:2:4), 3TJ(0:3:3), 3TJ(1:1:4), 3TJ(1:2:3), and 3TJ(2:2:2) types.

  16. Photocurrent spectroscopy of exciton and free particle optical transitions in suspended carbon nanotube pn-junctions

    SciTech Connect

    Chang, Shun-Wen; Theiss, Jesse; Hazra, Jubin; Aykol, Mehmet; Kapadia, Rehan; Cronin, Stephen B.

    2015-08-03

    We study photocurrent generation in individual, suspended carbon nanotube pn-junction diodes formed by electrostatic doping using two gate electrodes. Photocurrent spectra collected under various electrostatic doping concentrations reveal distinctive behaviors for free particle optical transitions and excitonic transitions. In particular, the photocurrent generated by excitonic transitions exhibits a strong gate doping dependence, while that of the free particle transitions is gate independent. Here, the built-in potential of the pn-junction is required to separate the strongly bound electron-hole pairs of the excitons, while free particle excitations do not require this field-assisted charge separation. We observe a sharp, well defined E{sub 11} free particle interband transition in contrast with previous photocurrent studies. Several steps are taken to ensure that the active charge separating region of these pn-junctions is suspended off the substrate in a suspended region that is substantially longer than the exciton diffusion length and, therefore, the photocurrent does not originate from a Schottky junction. We present a detailed model of the built-in fields in these pn-junctions, which, together with phonon-assistant exciton dissociation, predicts photocurrents on the same order of those observed experimentally.

  17. Optical detection of argon gas flow based on vibration-induced change in photoluminescence of a semiconducting single-walled carbon nanotube bundle.

    PubMed

    Kim, Hong-Seok; Kim, Woo-Jae; Strano, Michael S; Hanl, Jae-Hee

    2014-12-01

    In this work, we demonstrate that Ar gas flow can be optically detected using mechanical vibration of a semiconducting single-walled carbon nanotube (SWCNT) bundle as a platform. A change in the photoluminescence (PL) intensity was induced by out-of-focusing of the SWCNT bundle of interest due to vibration caused by the introduced gas stream, for which a gas flow control system was installed in an optical microscope. The PL intensity was found to change systemically with the Ar flow rates in a range of relatively large flow rate intervals [0.70 to 3.0 standard cubic liters per minute (SLM) with 0.1-0.5 SLM intervals] with a noticeable hysteresis. It was, however, difficult to obtain a detectable PL change in a range of very small flow rate intervals (0.67 to 0.70 SLM with a 0.01 SLM interval). The detailed results and underlying mechanism are discussed in detail.

  18. Self-formation of highly aligned metallic, semiconducting and single chiral single-walled carbon nanotubes assemblies via a crystal template method

    SciTech Connect

    Kawai, Hideki; Hasegawa, Kai; Yanagi, Kazuhiro; Oyane, Ayako; Naitoh, Yasuhisa

    2014-09-01

    The fabrication of an aligned array of single-walled carbon nanotubes (SWCNTs) with a single chiral state has been a significant challenge for SWCNT applications as well as for basic science research. Here, we developed a simple, unique technique to produce assemblies in which metallic, semiconducting, and single chiral state SWCNTs were densely and highly aligned. We utilized a crystal of surfactant as a template on which mono-dispersed SWCNTs in solution self-assembled. Micro-Raman measurements and scanning electron microscopy measurements clearly showed that the SWCNTs were highly and densely aligned parallel to the crystal axis, indicating that approximately 70% of the SWCNTs were within 7° of being parallel. Moreover, the assemblies exhibited good field effect transistor characteristics with an on/off ratio of 1.3 × 10{sup 5}.

  19. Hetero-junctions of Boron Nitride and Carbon Nanotubes: Synthesis and Characterization

    SciTech Connect

    Yap, Yoke Khin

    2013-03-14

    Hetero-junctions of boron nitride nanotubes (BNNTs) and carbon nanotubes (CNTs) are expected to have appealing new properties that are not available from pure BNNTs and CNTs. Theoretical studies indicate that BNNT/CNT junctions could be multifunctional and applicable as memory, spintronic, electronic, and photonics devices with tunable band structures. This will lead to energy and material efficient multifunctional devices that will be beneficial to the society. However, experimental realization of BNNT/CNT junctions was hindered by the absent of a common growth technique for BNNTs and CNTs. In fact, the synthesis of BNNTs was very challenging and may involve high temperatures (up to 3000 degree Celsius by laser ablation) and explosive chemicals. During the award period, we have successfully developed a simple chemical vapor deposition (CVD) technique to grow BNNTs at 1100-1200 degree Celsius without using dangerous chemicals. A series of common catalyst have then been identified for the synthesis of BNNTs and CNTs. Both of these breakthroughs have led to our preliminary success in growing two types of BNNT/CNT junctions and two additional new nanostructures: 1) branching BNNT/CNT junctions and 2) co-axial BNNT/CNT junctions, 3) quantum dots functionalized BNNTs (QDs-BNNTs), 4) BNNT/graphene junctions. We have started to understand their structural, compositional, and electronic properties. Latest results indicate that the branching BNNT/CNT junctions and QDs-BNNTs are functional as room-temperature tunneling devices. We have submitted the application of a renewal grant to continue the study of these new energy efficient materials. Finally, this project has also strengthened our collaborations with multiple Department of Energy's Nanoscale Science Research Centers (NSRCs), including the Center for Nanophase Materials Sciences (CNMS) at Oak Ridge National Laboratory, and the Center for Integrated Nanotechnologies (CINTs) at Sandia National Laboratories and Los

  20. Nanosoldering carbon nanotube junctions by local chemical vapor deposition for improved device performance.

    PubMed

    Do, Jae-Won; Estrada, David; Xie, Xu; Chang, Noel N; Mallek, Justin; Girolami, Gregory S; Rogers, John A; Pop, Eric; Lyding, Joseph W

    2013-01-01

    The performance of carbon nanotube network (CNN) devices is usually limited by the high resistance of individual nanotube junctions (NJs). We present a novel method to reduce this resistance through a nanoscale chemical vapor deposition (CVD) process. By passing current through the devices in the presence of a gaseous CVD precursor, localized nanoscale Joule heating induced at the NJs stimulates the selective and self-limiting deposition of metallic nanosolder. The effectiveness of this nanosoldering process depends on the work function of the deposited metal (here Pd or HfB2), and it can improve the on/off current ratio of a CNN device by nearly an order of magnitude. This nanosoldering technique could also be applied to other device types where nanoscale resistance components limit overall device performance. PMID:24215439

  1. Flexible infrared detectors based on p-n junctions of multi-walled carbon nanotubes.

    PubMed

    Huang, Zhenlong; Gao, Min; Yan, Zhuocheng; Pan, Taisong; Liao, Feiyi; Lin, Yuan

    2016-05-14

    Different types of multi-walled carbon nanotubes (CNTs), synthesized by chemical vapor deposition, are used to fabricate infrared (IR) detectors on flexible substrates based on CNT p-n junctions. It is found that this kind of detector is sensitive to infrared signals with a power density as low as 90 μW mm(-2) even at room temperature. Besides, unlike other devices, the detector with this unique structure can be bent for 100 cycles without any damage and its functionality does not degenerate once it recovers to the initial state. The results give a good reference for developing efficient, low-cost, and flexible IR detectors. PMID:27101973

  2. Photothermoelectric p-n junction photodetector with intrinsic broadband polarimetry based on macroscopic carbon nanotube films.

    PubMed

    He, Xiaowei; Wang, Xuan; Nanot, Sébastien; Cong, Kankan; Jiang, Qijia; Kane, Alexander A; Goldsmith, John E M; Hauge, Robert H; Léonard, François; Kono, Junichiro

    2013-08-27

    Light polarization is used in the animal kingdom for communication, navigation, and enhanced scene interpretation and also plays an important role in astronomy, remote sensing, and military applications. To date, there have been few photodetector materials demonstrated to have direct polarization sensitivity, as is usually the case in nature. Here, we report the realization of a carbon-based broadband photodetector, where the polarimetry is intrinsic to the active photodetector material. The detector is based on p-n junctions formed between two macroscopic films of single-wall carbon nanotubes. A responsivity up to ~1 V/W was observed in these devices, with a broadband spectral response spanning the visible to the mid-infrared. This responsivity is about 35 times larger than previous devices without p-n junctions. A combination of experiment and theory is used to demonstrate the photothermoelectric origin of the responsivity and to discuss the performance attributes of such devices.

  3. Facile Isolation of Adsorbent-Free Long and Highly-Pure Chirality-Selected Semiconducting Single-Walled Carbon Nanotubes Using A Hydrogen-bonding Supramolecular Polymer

    PubMed Central

    Toshimitsu, Fumiyuki; Nakashima, Naotoshi

    2015-01-01

    The ideal form of semiconducting-single-walled carbon nanotubes (sem-SWNTs) for science and technology is long, defect-free, chirality pure and chemically pure isolated narrow diameter tubes. While various techniques to solubilize and purify sem-SWNTs have been developed, many of them targeted only the chiral- or chemically-purity while sacrificing the sem-SWNT intrinsic structural identities by applying strong ultra-sonication and/or chemical modifications. Toward the ultimate purification of the sem-SWNTs, here we report a mild-conditioned extraction of the sem-SWNTs using removable supramolecular hydrogen-bonding polymers (HBPs) that are composed of dicarboxylic- or diaminopyridyl-fluorenes with ~70%-(8,6)SWNT selective extraction. Replacing conventional strong sonication techniques by a simple shaking using HPBs was found to provide long sem-SWNTs (>2.0 μm) with a very high D/G ratio, which was determined by atomic force microscopy observations. The HBPs were readily removed from the nanotube surfaces by an outer stimulus, such as a change in the solvent polarities, to provide chemically pure (8,6)-enriched sem-SWNTs. We also describe molecular mechanics calculations to propose possible structures for the HBP-wrapped sem-SWNTs, furthermore, the mechanism of the chiral selectivity for the sorted sem-SWNTs is well explained by the relationship between the molecular surface area and mass of the HBP/SWNT composites. PMID:26658356

  4. Facile Isolation of Adsorbent-Free Long and Highly-Pure Chirality-Selected Semiconducting Single-Walled Carbon Nanotubes Using A Hydrogen-bonding Supramolecular Polymer

    NASA Astrophysics Data System (ADS)

    Toshimitsu, Fumiyuki; Nakashima, Naotoshi

    2015-12-01

    The ideal form of semiconducting-single-walled carbon nanotubes (sem-SWNTs) for science and technology is long, defect-free, chirality pure and chemically pure isolated narrow diameter tubes. While various techniques to solubilize and purify sem-SWNTs have been developed, many of them targeted only the chiral- or chemically-purity while sacrificing the sem-SWNT intrinsic structural identities by applying strong ultra-sonication and/or chemical modifications. Toward the ultimate purification of the sem-SWNTs, here we report a mild-conditioned extraction of the sem-SWNTs using removable supramolecular hydrogen-bonding polymers (HBPs) that are composed of dicarboxylic- or diaminopyridyl-fluorenes with ~70%-(8,6)SWNT selective extraction. Replacing conventional strong sonication techniques by a simple shaking using HPBs was found to provide long sem-SWNTs (>2.0 μm) with a very high D/G ratio, which was determined by atomic force microscopy observations. The HBPs were readily removed from the nanotube surfaces by an outer stimulus, such as a change in the solvent polarities, to provide chemically pure (8,6)-enriched sem-SWNTs. We also describe molecular mechanics calculations to propose possible structures for the HBP-wrapped sem-SWNTs, furthermore, the mechanism of the chiral selectivity for the sorted sem-SWNTs is well explained by the relationship between the molecular surface area and mass of the HBP/SWNT composites.

  5. Facile Isolation of Adsorbent-Free Long and Highly-Pure Chirality-Selected Semiconducting Single-Walled Carbon Nanotubes Using A Hydrogen-bonding Supramolecular Polymer.

    PubMed

    Toshimitsu, Fumiyuki; Nakashima, Naotoshi

    2015-01-01

    The ideal form of semiconducting-single-walled carbon nanotubes (sem-SWNTs) for science and technology is long, defect-free, chirality pure and chemically pure isolated narrow diameter tubes. While various techniques to solubilize and purify sem-SWNTs have been developed, many of them targeted only the chiral- or chemically-purity while sacrificing the sem-SWNT intrinsic structural identities by applying strong ultra-sonication and/or chemical modifications. Toward the ultimate purification of the sem-SWNTs, here we report a mild-conditioned extraction of the sem-SWNTs using removable supramolecular hydrogen-bonding polymers (HBPs) that are composed of dicarboxylic- or diaminopyridyl-fluorenes with ~70%-(8,6)SWNT selective extraction. Replacing conventional strong sonication techniques by a simple shaking using HPBs was found to provide long sem-SWNTs (>2.0 μm) with a very high D/G ratio, which was determined by atomic force microscopy observations. The HBPs were readily removed from the nanotube surfaces by an outer stimulus, such as a change in the solvent polarities, to provide chemically pure (8,6)-enriched sem-SWNTs. We also describe molecular mechanics calculations to propose possible structures for the HBP-wrapped sem-SWNTs, furthermore, the mechanism of the chiral selectivity for the sorted sem-SWNTs is well explained by the relationship between the molecular surface area and mass of the HBP/SWNT composites.

  6. Facile Isolation of Adsorbent-Free Long and Highly-Pure Chirality-Selected Semiconducting Single-Walled Carbon Nanotubes Using A Hydrogen-bonding Supramolecular Polymer.

    PubMed

    Toshimitsu, Fumiyuki; Nakashima, Naotoshi

    2015-01-01

    The ideal form of semiconducting-single-walled carbon nanotubes (sem-SWNTs) for science and technology is long, defect-free, chirality pure and chemically pure isolated narrow diameter tubes. While various techniques to solubilize and purify sem-SWNTs have been developed, many of them targeted only the chiral- or chemically-purity while sacrificing the sem-SWNT intrinsic structural identities by applying strong ultra-sonication and/or chemical modifications. Toward the ultimate purification of the sem-SWNTs, here we report a mild-conditioned extraction of the sem-SWNTs using removable supramolecular hydrogen-bonding polymers (HBPs) that are composed of dicarboxylic- or diaminopyridyl-fluorenes with ~70%-(8,6)SWNT selective extraction. Replacing conventional strong sonication techniques by a simple shaking using HPBs was found to provide long sem-SWNTs (>2.0 μm) with a very high D/G ratio, which was determined by atomic force microscopy observations. The HBPs were readily removed from the nanotube surfaces by an outer stimulus, such as a change in the solvent polarities, to provide chemically pure (8,6)-enriched sem-SWNTs. We also describe molecular mechanics calculations to propose possible structures for the HBP-wrapped sem-SWNTs, furthermore, the mechanism of the chiral selectivity for the sorted sem-SWNTs is well explained by the relationship between the molecular surface area and mass of the HBP/SWNT composites. PMID:26658356

  7. Ideal dipole approximation fails to predict electronic coupling and energy transfer between semiconducting single-wall carbon nanotubes.

    PubMed

    Wong, Cathy Y; Curutchet, Carles; Tretiak, Sergei; Scholes, Gregory D

    2009-02-28

    The electronic coupling values and approximate energy transfer rates between semiconductor single-wall carbon nanotubes are calculated using two different approximations, the point dipole approximation and the distributed transition monopole approximation, and the results are compared. It is shown that the point dipole approximation fails dramatically at tube separations typically found in nanotube bundles ( approximately 12-16 A) and that the disagreement persists at large tube separations (>100 A, over ten nanotube diameters). When used in Forster resonance energy transfer theory, the coupling between two point transition dipoles is found to overestimate energy transfer rates. It is concluded that the point dipole approximation is inappropriate for use with elongated systems such as carbon nanotubes and that methods which can account for the shape of the particle are more suitable. PMID:19256589

  8. Electronic transport in biphenyl single-molecule junctions with carbon nanotubes electrodes: The role of molecular conformation and chirality

    SciTech Connect

    Brito Silva, C. A. Jr.; Granhen, E. R.; Silva, S. J. S. da; Leal, J. F. P.; Del Nero, J.; Pinheiro, F. A.

    2010-08-15

    We investigate, by means of ab initio calculations, electronic transport in molecular junctions composed of a biphenyl molecule attached to metallic carbon nanotubes. We find that the conductance is proportional to cos{sup 2} {theta}, with {theta} the angle between phenyl rings, when the Fermi level of the contacts lies within the frontier molecular orbitals energy gap. This result, which agrees with experiments in biphenyl junctions with nonorganic contacts, suggests that the cos{sup 2} {theta} law has a more general applicability, irrespective of the nature of the electrodes. We calculate the geometrical degree of chirality of the junction, which only depends on the atomic positions, and demonstrate that it is not only proportional to cos{sup 2} {theta} but also is strongly correlated with the current through the system. These results indicate that molecular conformation plays the preponderant role in determining transport properties of biphenyl-carbon nanotubes molecular junctions.

  9. Flexible infrared detectors based on p-n junctions of multi-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Huang, Zhenlong; Gao, Min; Yan, Zhuocheng; Pan, Taisong; Liao, Feiyi; Lin, Yuan

    2016-05-01

    Different types of multi-walled carbon nanotubes (CNTs), synthesized by chemical vapor deposition, are used to fabricate infrared (IR) detectors on flexible substrates based on CNT p-n junctions. It is found that this kind of detector is sensitive to infrared signals with a power density as low as 90 μW mm-2 even at room temperature. Besides, unlike other devices, the detector with this unique structure can be bent for 100 cycles without any damage and its functionality does not degenerate once it recovers to the initial state. The results give a good reference for developing efficient, low-cost, and flexible IR detectors.Different types of multi-walled carbon nanotubes (CNTs), synthesized by chemical vapor deposition, are used to fabricate infrared (IR) detectors on flexible substrates based on CNT p-n junctions. It is found that this kind of detector is sensitive to infrared signals with a power density as low as 90 μW mm-2 even at room temperature. Besides, unlike other devices, the detector with this unique structure can be bent for 100 cycles without any damage and its functionality does not degenerate once it recovers to the initial state. The results give a good reference for developing efficient, low-cost, and flexible IR detectors. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08791k

  10. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

    NASA Astrophysics Data System (ADS)

    Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

    2016-02-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current.

  11. A p-i-n junction diode based on locally doped carbon nanotube network

    NASA Astrophysics Data System (ADS)

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-03-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

  12. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

    PubMed Central

    Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current. PMID:26915400

  13. A p-i-n junction diode based on locally doped carbon nanotube network

    PubMed Central

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-01-01

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~104), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm. PMID:26996610

  14. A p-i-n junction diode based on locally doped carbon nanotube network.

    PubMed

    Liu, Xiaodong; Chen, Changxin; Wei, Liangming; Hu, Nantao; Song, Chuanjuan; Liao, Chenghao; He, Rong; Dong, Xusheng; Wang, Ying; Liu, Qinran; Zhang, Yafei

    2016-03-21

    A p-i-n junction diode constructed by the locally doped network of single-walled carbon nanotubes (SWNTs) was investigated. In this diode, the two opposite ends of the SWNT-network channel were selectively doped by triethyloxonium hexachloroantimonate (OA) and polyethylenimine (PEI) to obtain the air-stable p- and n-type SWNTs respectively while the central area of the SWNT-network remained intrinsic state, resulting in the formation of a p-i-n junction with a strong built-in electronic field in the SWNTs. The results showed that the forward current and the rectification ratio of the diode increased as the doping degree increased. The forward current of the device could also be increased by decreasing the channel length. A high-performance p-i-n junction diode with a high rectification ratio (~10(4)), large forward current (~12.2 μA) and low reverse saturated current (~1.8 nA) was achieved with the OA and PEI doping time of 5 h and 18 h for a channel length of ~6 μm.

  15. Mechanics of lipid bilayer junctions affecting the size of a connecting lipid nanotube

    NASA Astrophysics Data System (ADS)

    Karlsson, Roger; Kurczy, Michael; Grzhibovskis, Richards; Adams, Kelly L.; Ewing, Andrew G.; Cans, Ann-Sofie; Voinova, Marina V.

    2011-06-01

    In this study we report a physical analysis of the membrane mechanics affecting the size of the highly curved region of a lipid nanotube (LNT) that is either connected between a lipid bilayer vesicle and the tip of a glass microinjection pipette (tube-only) or between a lipid bilayer vesicle and a vesicle that is attached to the tip of a glass microinjection pipette (two-vesicle). For the tube-only configuration (TOC), a micropipette is used to pull a LNT into the interior of a surface-immobilized vesicle, where the length of the tube L is determined by the distance of the micropipette to the vesicle wall. For the two-vesicle configuration (TVC), a small vesicle is inflated at the tip of the micropipette tip and the length of the tube L is in this case determined by the distance between the two interconnected vesicles. An electrochemical method monitoring diffusion of electroactive molecules through the nanotube has been used to determine the radius of the nanotube R as a function of nanotube length L for the two configurations. The data show that the LNT connected in the TVC constricts to a smaller radius in comparison to the tube-only mode and that tube radius shrinks at shorter tube lengths. To explain these electrochemical data, we developed a theoretical model taking into account the free energy of the membrane regions of the vesicles, the LNT and the high curvature junctions. In particular, this model allows us to estimate the surface tension coefficients from R( L) measurements.

  16. Wall-to-wall stress induced in (6,5) semiconducting nanotubes by encapsulation in metallic outer tubes of different diameters: a resonance Raman study of individual C60-derived double-wall carbon nanotubes.

    PubMed

    Villalpando-Paez, Federico; Muramatsu, Hiroyuki; Kim, Yoong Ahm; Farhat, Hootan; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

    2010-03-01

    We measure resonant Raman scattering from 11 individual C(60)-derived double-wall carbon nanotubes all having inner semiconducting (6,5) tubes and various outer metallic tubes. The Raman spectra show the radial breathing modes (RBM) of the inner and the outer tubes to be simultaneously in resonance with the same laser energy. We observe that an increase in the RBM frequency of the inner tubes is related to an increase in the RBM frequency of the outer tubes. The Raman spectra also contain a sharp G(-) feature that increases in frequency as the nominal diameter of the outer metallic tubes decreases. Finally, the one-phonon second-order D-band mode shows a two-way frequency splitting that decreases with decreasing nominal wall-to-wall distance. We suggest that the stress which increases with decreasing nominal wall-to-wall distance is responsible for the hardening that is observed in the frequencies of the RBM, D and G(-) modes of the inner (6,5) semiconducting tubes.

  17. Carbon-Nanotube Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

    2006-01-01

    Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid

  18. Electronic and transport properties of radially deformed double-walled carbon nanotube intramolecular junction

    NASA Astrophysics Data System (ADS)

    Yang, Xiaoping; Dong, Jinming

    2004-09-01

    The electronic and transport property of a radially deformed double-walled carbon nanotube (DWNT) intramolecular junction (IMJ) has been studied by the tight-binding (TB) model combined with the first-principle calculations. The geometrical structures of the DWNT IMJ have been first optimized in energy by the universal force field (UFF) method. It is found that when heavily squashed, the DWNT will become an insulator-coated metallic wire, and the conductance near the Fermi level has been significantly changed by the radial squash. Specially, several resonance conductance peaks appear at some energies in the conduction band of the squashed DWNT IMJ. Finally, we have also investigated the conductance variation due to change of the length of the central semiconductor in the squashed DWNT IMJ. Furthermore, a promising pure carbon nanoscale electronic device is proposed based on the DWNT IMJ.

  19. 0-π quantum transition in a carbon nanotube Josephson junction: Universal phase dependence and orbital degeneracy

    NASA Astrophysics Data System (ADS)

    Delagrange, R.; Weil, R.; Kasumov, A.; Ferrier, M.; Bouchiat, H.; Deblock, R.

    2016-05-01

    In a π -Josephson junction, the supercurrent's sign is reversed due to the dephasing of superconducting pairs upon their traversal of the nonsuperconducting part. 0-π quantum transitions are extremely sensitive to electronic and magnetic correlations, providing powerful exploration tools of competing orders. In a quantum dot connected to superconducting reservoirs, the transition is governed by gate voltage. As shown recently, it can also be controlled by the superconducting phase in the case of strong competition between the superconducting proximity effect and Kondo correlations. We investigated here the current-phase relation in a clean carbon nanotube quantum dot, close to orbital degeneracy, in a regime of strong competition between local electronic correlations and superconducting proximity effect. We show that the nature of the transition depends crucially on the occupation and the width of the orbital levels, which determine their respective contribution to transport. When the transport of Cooper pairs takes place through only one of these levels, we find that the phase diagram of the phase-dependent 0-π transition is a universal characteristic of a discontinuous level-crossing quantum transition at zero temperature. In the case where the two levels are involved, the nanotube Josephson current exhibits a continuous 0-π transition, independent of the superconducting phase, revealing a different physical mechanism of the transition.

  20. Measurement of the resistance induced by a single atomic impurity on a (7,6) semiconducting carbon nanotube: scattering strength of individual potassium atoms as a function of gate voltage

    NASA Astrophysics Data System (ADS)

    Tsuchikawa, Ryuichi; Ahmadi, Amin; Heligman, Daniel; Zhang, Zhengyi; Mucciolo, Eduardo; Hone, James; Ishigami, Masa

    2015-03-01

    Despite many years of research, no measurements have been performed to determine resistance induced by impurities in carbon nanotubes. Over the last few years, we have developed a capability to measure the resistance induced by a single impurity atom on nanotubes with known chirality. Using this capability, we measured the resistance induced by an individual potassium atom on a (7,6) semiconducting carbon nanotube. The ``atomic'' resistance of potassium is found to be in the kohm range and has a strong dependence on the applied gate voltage. The scattering strength of the p-type (valence band) channel is approximately 20 times greater than that of the n-type (conduction band) channel. We integrate our atomically-controlled experimental result to a numerical recursive Green's function technique, which can precisely model the experiment, to understand the measured ``atomic'' resistance and the asymmetry. This work is based upon research supported by the National Science Foundation under Grant No. 0955625 and 1006230.

  1. Record high efficiency single-walled carbon nanotube/silicon p-n junction solar cells.

    PubMed

    Jung, Yeonwoong; Li, Xiaokai; Rajan, Nitin K; Taylor, André D; Reed, Mark A

    2013-01-01

    Carrier transport characteristics in high-efficiency single-walled carbon nanotubes (SWNTs)/silicon (Si) hybrid solar cells are presented. The solar cells were fabricated by depositing intrinsic p-type SWNT thin-films on n-type Si wafers without involving any high-temperature process for p-n junction formation. The optimized cells showed a device ideality factor close to unity and a record-high power-conversion-efficiency of >11%. By investigating the dark forward current density characteristics with varying temperature, we have identified that the temperature-dependent current rectification originates from the thermally activated band-to-band transition of carriers in Si, and the role of the SWNT thin films is to establish a built-in potential for carrier separation/collection. We have also established that the dominant carrier transport mechanism is diffusion, with minimal interface recombination. This is further supported by the observation of a long minority carrier lifetime of ~34 μs, determined by the transient recovery method. This study suggests that these hybrid solar cells operate in the same manner as single crystalline p-n homojunction Si solar cells.

  2. A novel nanopin model based on a Y-junction carbon nanotube

    NASA Astrophysics Data System (ADS)

    Zhang, Zhong-Qiang; Zhong, Jun; Ye, Hong-Fei; Liu, Zhen; Cheng, Guang-Gui; Ding, Jian-Ning

    2016-08-01

    A prototype of nanopin based on a Y-junction carbon nanotube (CNT) is first proposed. The loading and unloading processes are investigated by using classical molecular dynamics, considering the influences of the fit dimension, positioning error, thermal effect, and the loading/unloading velocity on the performance of the proposed nanopin. The optimum size of the gap between the nanopin and the through hole in a silicon component is obtained, which is responsible for a desired fixity with the acceptable install resistance. It is found that a proper positioning error in a certain direction associated with the branched structure of the nanopin will facilitate the installation process. The performance of the proposed nanopin is not sensitive to thermal and normal axial velocity of the nanopin, while the unloading direction affects appreciably on the service performance of the nanopin attributed to the orientation of the branched CNT. Particularly, the service performance of the proposed nanopin considerably depends on several special deforming configurations in the loading and unloading processes.

  3. Nanotechnology with Carbon Nanotubes: Mechanics, Chemistry, and Electronics

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak

    2003-01-01

    This viewgraph presentation reviews the Nanotechnology of carbon nanotubes. The contents include: 1) Nanomechanics examples; 2) Experimental validation of nanotubes in composites; 3) Anisotropic plastic collapse; 4) Spatio-temporal scales, yielding single-wall nanotubes; 5) Side-wall functionalization of nanotubes; 6) multi-wall Y junction carbon nanotubes; 7) Molecular electronics with Nanotube junctions; 8) Single-wall carbon nanotube junctions; welding; 9) biomimetic dendritic neurons: Carbon nanotube, nanotube electronics (basics), and nanotube junctions for Devices,

  4. Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

    NASA Astrophysics Data System (ADS)

    Chen, Wenchao; Seol, Gyungseon; Rinzler, Andrew G.; Guo, Jing

    2012-03-01

    Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell.

  5. Fabrication of stable pn junction single-walled carbon nanotube thin films by position selective Cs plasma irradiation method

    NASA Astrophysics Data System (ADS)

    Abiko, Y.; Kato, T.; Hatakeyama, R.; Kaneko, T.

    2014-06-01

    Stable n-type thin film transistors (TFTs) are fabricated with Cs encapsulated single-walled carbon nanotubes (Cs@SWNTs). The transport property of SWNTs-TFTs clearly changes from p- to n-type characteristic after the Cs plasma irradiation. Based on the systematic investigations, it is revealed that there is an optimum ion energy for the effective Cs encapsulation, which is around 50 eV. Furthermore, it is also found that the n-type feature is stable even in water and high temperature (< 400 °C) conditions. The pn junction structure is also realized by position selective doping of Cs. This very stable pn junction TFT is important for the practical application of SWNTs-based thin film electronics.

  6. PREFACE: Semiconducting oxides Semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Catlow, Richard; Walsh, Aron

    2011-08-01

    Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for

  7. PREFACE: Semiconducting oxides Semiconducting oxides

    NASA Astrophysics Data System (ADS)

    Catlow, Richard; Walsh, Aron

    2011-08-01

    Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for

  8. Charge transfer at junctions of a single layer of graphene and a metallic single walled carbon nanotube.

    PubMed

    Paulus, Geraldine L C; Wang, Qing Hua; Ulissi, Zachary W; McNicholas, Thomas P; Vijayaraghavan, Aravind; Shih, Chih-Jen; Jin, Zhong; Strano, Michael S

    2013-06-10

    Junctions between a single walled carbon nanotube (SWNT) and a monolayer of graphene are fabricated and studied for the first time. A single layer graphene (SLG) sheet grown by chemical vapor deposition (CVD) is transferred onto a SiO₂/Si wafer with aligned CVD-grown SWNTs. Raman spectroscopy is used to identify metallic-SWNT/SLG junctions, and a method for spectroscopic deconvolution of the overlapping G peaks of the SWNT and the SLG is reported, making use of the polarization dependence of the SWNT. A comparison of the Raman peak positions and intensities of the individual SWNT and graphene to those of the SWNT-graphene junction indicates an electron transfer of 1.12 × 10¹³ cm⁻² from the SWNT to the graphene. This direction of charge transfer is in agreement with the work functions of the SWNT and graphene. The compression of the SWNT by the graphene increases the broadening of the radial breathing mode (RBM) peak from 3.6 ± 0.3 to 4.6 ± 0.5 cm⁻¹ and of the G peak from 13 ± 1 to 18 ± 1 cm⁻¹, in reasonable agreement with molecular dynamics simulations. However, the RBM and G peak position shifts are primarily due to charge transfer with minimal contributions from strain. With this method, the ability to dope graphene with nanometer resolution is demonstrated. PMID:23281165

  9. Electronic transport in oligo-para-phenylene junctions attached to carbon nanotube electrodes: Transition-voltage spectroscopy and chirality

    SciTech Connect

    Brito Silva, C. A. Jr.; Silva, S. J. S. da; Leal, J. F. P.; Pinheiro, F. A.; Del Nero, J.

    2011-06-15

    We have investigated, by means of a nonequilibrium Green's function method coupled to density functional theory, the electronic transport properties of molecular junctions composed of oligo-para-phenylene (with two, three, four, and five phenyl rings) covalently bridging the gap between metallic carbon nanotubes electrodes. We have found that the current is strongly correlated to a purely geometrical chiral parameter, both on-resonance and off-resonance. The Fowler-Nordheim plot exhibits minima, V{sub min}, that occur whenever the tail of a resonant transmission peak enters in the bias window. This result corroborates the scenario in which the coherent transport model gives the correct interpretation to transition voltage spectroscopy (TVS). We have shown that V{sub min} corresponds to voltages where a negative differential resistance (NDR) occurs. The finding that V{sub min} corresponds to voltages that exhibit NDR, which can be explained only in single-molecule junctions within the coherent transport model, further confirms the applicability of such models to adequately interpret TVS. The fact that the electrodes are organic is at the origin of differences in the behavior of V{sub min} if compared to the case of molecular junctions with nonorganic contacts treated so far.

  10. Multiple intra-tube junctions in the inner tube of peapod-derived double walled carbon nanotubes: theoretical study and experimental evidence.

    PubMed

    Xu, Ziwei; Li, Hui; Fujisawa, Kazunori; Kim, Yoong Ahm; Endo, Morinobu; Ding, Feng

    2012-01-01

    The coalescence process of fullerenes in the hollow core of single walled carbon nanotubes is systematically explored by the kinetic Monte Carlo method. Two elongation (or growth) modes via the coalescence (i) between an inner tube and fullerenes and (ii) between neighboring inner tubes are identified. It is found that the coalescence of two inner tubes mostly creates a very stable intra-tube junction which is composed of multiple pentagon-heptagon pairs. As a consequence, the study predicts that the inner tube of peapod derived double walled carbon nanotubes (DWNTs) must contain many intra-tube junctions. Careful high resolution transmission electron microscopy observation on peapod-grown DWNT sample provides experimental evidence of the presence of the junctions.

  11. Synthesis and enhanced photoelectrocatalytic activity of p-n junction Co3O4/TiO2 nanotube arrays

    NASA Astrophysics Data System (ADS)

    Dai, Gaopeng; Liu, Suqin; Liang, Ying; Luo, Tianxiong

    2013-01-01

    Co3O4/TiO2 nanotube arrays (NTs) were prepared by depositing Co3O4 nanoparticles (NPs) on the tube wall of the self-organized TiO2 NTs using an impregnating-deposition-decompostion method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV-vis absorption spectroscopy. The photoelectrocatalytic (PEC) activity is evaluated by degradation of methyl orange (MO) aqueous solution. The prepared Co3O4/TiO2 NTs exhibit much higher PEC activity than TiO2 NTs due to the p-n junction formed between Co3O4 and TiO2.

  12. Carbon Nanotube Based Molecular Electronics and Motors: A View from Classical and Quantum Dynamics Simulations

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Saini, Subhash (Technical Monitor)

    1998-01-01

    The tubular forms of fullerenes popularly known as carbon nanotubes are experimentally produced as single-, multiwall, and rope configurations. The nanotubes and nanoropes have shown to exhibit unusual mechanical and electronic properties. The single wall nanotubes exhibit both semiconducting and metallic behavior. In short undefected lengths they are the known strongest fibers which are unbreakable even when bent in half. Grown in ropes their tensile strength is approximately 100 times greater than steel at only one sixth the weight. Employing large scale classical and quantum molecular dynamics simulations we will explore the use of carbon nanotubes and carbon nanotube junctions in 2-, 3-, and 4-point molecular electronic device components, dynamic strength characterization for compressive, bending and torsional strains, and chemical functionalization for possible use in a nanoscale molecular motor. The above is an unclassified material produced for non-competitive basic research in the nanotechnology area.

  13. Hetero-junction carbon nanotube FET with lightly doped drain and source regions

    NASA Astrophysics Data System (ADS)

    Yousefi, Reza; Doorzad, Leila

    2016-01-01

    In this paper, a new structure was introduced for carbon nanotube (CNT) MOSFET transistors. The proposed structure was composed of two different nanotubes for the source/drain and channel regions. Electrical characteristics of this structure were investigated using nonequilibrium Green’s function approach. Results of the simulations demonstrated that the proposed hetero-structure had almost the same ON-current and much less OFF-current and as a result higher ION/IOFF ratio than the conventional homo-structure. Results of the comparison between switching behavior in equal ION/IOFF ratio showed that, although the proposed structure had longer delay, its power dissipation for every switching event was less than that of the conventional structure. A further comparison of the switching characteristic in equal ON-current values showed that the proposed structure enjoys from shorter delay and also consumes less power-delay product (PDP) when compared to the LDDS structure.

  14. Rectifying performance and negative differential behavior in graphite—chain—carbon nanotube junctions

    SciTech Connect

    Qiu, Ming; Li, Jiangfan; Liew, K. M.; Yuan, Chris

    2014-01-13

    In this paper, the (5, 5) capped carbon nanotubes (CNTs) in contact with different lengths of sp monoatomic chains grown on the surface of graphite substrate are fabricated and its electronic transport properties sandwiched between CNT and graphite electrodes are investigated. The first-principles calculations based on nonequilibrium Green's function in combination with density-functional theory show that their rectifying performance and negative differential resistance behavior are observed under very low biases and obviously are enhanced when the length increases. From our analysis, the charge transfer, transmission spectra, projected density of states and evolutions of molecular orbitals are responsible for these phenomena.

  15. Thermionic energy conversion in carbon nanotube networks

    NASA Astrophysics Data System (ADS)

    Li, Chen; Pipe, Kevin; Kevin Pipe's Group Team

    We investigate whether efficient carrier ballistic transport in CNT networks can overcome the parasitic effects of high CNT thermal conductance to yield thermionic (TI) devices with high energy conversion efficiency and/or high cooling power density. We simulate semiconducting single-walled carbon nanotube (SWCNT) structures in which inter-tube junctions provide the necessary filtering of high-energy electrons. Using energy-dependent transmission functions, we compare the performances of various junction types in selective filtering, and then perform Monte Carlo (MC) simulations to study the subsequent relaxation of hot electrons within the SWCNTs. Finally, we examine the parasitic effects of high thermal conductance, accounting for reductions in phonon mean free path due to scattering at inter-tube junctions. The results of the junction transmission, MC, and phonon transport simulations suggest optimal CNT types, junction types, and inter-junction spacings that maximize energy conversion metrics such as efficiency and cooling power density. While certain aspects of electron transport and phonon transport in CNT networks remain unresolved, our simulations suggest that CNT-based networks show promise for TI energy conversion.

  16. Nanotube

    2007-09-13

    This is a source code to calculate the current-voltage characteristics, the charge distribution and the electrostatic potential in carbon nanotube devices. The code utilizes the non-equilibrium Green's function method, implemented in a tight-binding scheme, to calculate the charge distribution and the energy-dependent transmission function, from which the current or the conductance are obtained. The electrostatic potential is obtained by solving Poisson's equation on a grid with boundary conditions on the electrodes, and at other interfaces.more » Self-consistency between the charge and the electrostatic potential is achieved using a linear mixing method. Different versions of the code allow the modeling of different types of nanotube devices: Version 1.0: Modeling of carbon nanotube electronic devices with cylindrical symmetry Version 1.1: Modeling of planar carbon nanotube electronic devices Version 1.2: Modeling of photocurrent in carbon nanotube devices« less

  17. Rationally designed graphene-nanotube 3D architectures with a seamless nodal junction for efficient energy conversion and storage

    PubMed Central

    Xue, Yuhua; Ding, Yong; Niu, Jianbing; Xia, Zhenhai; Roy, Ajit; Chen, Hao; Qu, Jia; Wang, Zhong Lin; Dai, Liming

    2015-01-01

    One-dimensional (1D) carbon nanotubes (CNTs) and 2D single-atomic layer graphene have superior thermal, electrical, and mechanical properties. However, these nanomaterials exhibit poor out-of-plane properties due to the weak van der Waals interaction in the transverse direction between graphitic layers. Recent theoretical studies indicate that rationally designed 3D architectures could have desirable out-of-plane properties while maintaining in-plane properties by growing CNTs and graphene into 3D architectures with a seamless nodal junction. However, the experimental realization of seamlessly-bonded architectures remains a challenge. We developed a strategy of creating 3D graphene-CNT hollow fibers with radially aligned CNTs (RACNTs) seamlessly sheathed by a cylindrical graphene layer through a one-step chemical vapor deposition using an anodized aluminum wire template. By controlling the aluminum wire diameter and anodization time, the length of the RACNTs and diameter of the graphene hollow fiber can be tuned, enabling efficient energy conversion and storage. These fibers, with a controllable surface area, meso-/micropores, and superior electrical properties, are excellent electrode materials for all-solid-state wire-shaped supercapacitors with poly(vinyl alcohol)/H2SO4 as the electrolyte and binder, exhibiting a surface-specific capacitance of 89.4 mF/cm2 and length-specific capacitance up to 23.9 mF/cm, — one to four times the corresponding record-high capacities reported for other fiber-like supercapacitors. Dye-sensitized solar cells, fabricated using the fiber as a counter electrode, showed a power conversion efficiency of 6.8% and outperformed their counterparts with an expensive Pt wire counter electrode by a factor of 2.5. These novel fiber-shaped graphene-RACNT energy conversion and storage devices are so flexible they can be woven into fabrics as power sources. PMID:26601246

  18. Rationally designed graphene-nanotube 3D architectures with a seamless nodal junction for efficient energy conversion and storage.

    PubMed

    Xue, Yuhua; Ding, Yong; Niu, Jianbing; Xia, Zhenhai; Roy, Ajit; Chen, Hao; Qu, Jia; Wang, Zhong Lin; Dai, Liming

    2015-09-01

    One-dimensional (1D) carbon nanotubes (CNTs) and 2D single-atomic layer graphene have superior thermal, electrical, and mechanical properties. However, these nanomaterials exhibit poor out-of-plane properties due to the weak van der Waals interaction in the transverse direction between graphitic layers. Recent theoretical studies indicate that rationally designed 3D architectures could have desirable out-of-plane properties while maintaining in-plane properties by growing CNTs and graphene into 3D architectures with a seamless nodal junction. However, the experimental realization of seamlessly-bonded architectures remains a challenge. We developed a strategy of creating 3D graphene-CNT hollow fibers with radially aligned CNTs (RACNTs) seamlessly sheathed by a cylindrical graphene layer through a one-step chemical vapor deposition using an anodized aluminum wire template. By controlling the aluminum wire diameter and anodization time, the length of the RACNTs and diameter of the graphene hollow fiber can be tuned, enabling efficient energy conversion and storage. These fibers, with a controllable surface area, meso-/micropores, and superior electrical properties, are excellent electrode materials for all-solid-state wire-shaped supercapacitors with poly(vinyl alcohol)/H2SO4 as the electrolyte and binder, exhibiting a surface-specific capacitance of 89.4 mF/cm(2) and length-specific capacitance up to 23.9 mF/cm, - one to four times the corresponding record-high capacities reported for other fiber-like supercapacitors. Dye-sensitized solar cells, fabricated using the fiber as a counter electrode, showed a power conversion efficiency of 6.8% and outperformed their counterparts with an expensive Pt wire counter electrode by a factor of 2.5. These novel fiber-shaped graphene-RACNT energy conversion and storage devices are so flexible they can be woven into fabrics as power sources. PMID:26601246

  19. Communication of Ca(2+) signals via tunneling membrane nanotubes is mediated by transmission of inositol trisphosphate through gap junctions.

    PubMed

    Lock, Jeffrey T; Parker, Ian; Smith, Ian F

    2016-10-01

    Tunneling membrane nanotubes (TNTs) are thin membrane projections linking cell bodies separated by many micrometers, which are proposed to mediate signaling and even transfer of cytosolic contents between distant cells. Several reports describe propagation of Ca(2+) signals between distant cells via TNTs, but the underlying mechanisms remain poorly understood. Utilizing a HeLa M-Sec cell line engineered to upregulate TNTs we replicated previous findings that mechanical stimulation elicits robust cytosolic Ca(2+) elevations that propagate to surrounding, physically separate cells. However, whereas this was previously interpreted to involve intercellular communication through TNTs, we found that Ca(2+) signal propagation was abolished - even in TNT-connected cells - after blocking ATP-mediated paracrine signaling with a cocktail of extracellular inhibitors. To then establish whether gap junctions may enable cell-cell signaling via TNTs under these conditions, we expressed sfGFP-tagged connexin-43 (Cx43) in HeLa M-Sec cells. We observed robust communication of mechanically-evoked Ca(2+) signals between distant but TNT-connected cells, but only when both cells expressed Cx43. Moreover, we also observed communication of Ca(2+) signals evoked in one cell by local photorelease of inositol 1,4,5-trisphosphate (IP3). Ca(2+) responses in connected cells began after long latencies at intracellular sites several microns from the TNT connection site, implicating intercellular transfer of IP3 and subsequent IP3-mediated Ca(2+) liberation, and not Ca(2+) itself, as the mediator between TNT-connected, Cx43-expressing cells. Our results emphasize the need to control for paracrine transmission in studies of cell-cell signaling via TNTs and indicate that, in this cell line, TNTs do not establish cytosolic continuity between connected cells but rather point to the crucial importance of connexins to enable communication of cytosolic Ca(2+) signals via TNTs.

  20. Rationally designed graphene-nanotube 3D architectures with a seamless nodal junction for efficient energy conversion and storage.

    PubMed

    Xue, Yuhua; Ding, Yong; Niu, Jianbing; Xia, Zhenhai; Roy, Ajit; Chen, Hao; Qu, Jia; Wang, Zhong Lin; Dai, Liming

    2015-09-01

    One-dimensional (1D) carbon nanotubes (CNTs) and 2D single-atomic layer graphene have superior thermal, electrical, and mechanical properties. However, these nanomaterials exhibit poor out-of-plane properties due to the weak van der Waals interaction in the transverse direction between graphitic layers. Recent theoretical studies indicate that rationally designed 3D architectures could have desirable out-of-plane properties while maintaining in-plane properties by growing CNTs and graphene into 3D architectures with a seamless nodal junction. However, the experimental realization of seamlessly-bonded architectures remains a challenge. We developed a strategy of creating 3D graphene-CNT hollow fibers with radially aligned CNTs (RACNTs) seamlessly sheathed by a cylindrical graphene layer through a one-step chemical vapor deposition using an anodized aluminum wire template. By controlling the aluminum wire diameter and anodization time, the length of the RACNTs and diameter of the graphene hollow fiber can be tuned, enabling efficient energy conversion and storage. These fibers, with a controllable surface area, meso-/micropores, and superior electrical properties, are excellent electrode materials for all-solid-state wire-shaped supercapacitors with poly(vinyl alcohol)/H2SO4 as the electrolyte and binder, exhibiting a surface-specific capacitance of 89.4 mF/cm(2) and length-specific capacitance up to 23.9 mF/cm, - one to four times the corresponding record-high capacities reported for other fiber-like supercapacitors. Dye-sensitized solar cells, fabricated using the fiber as a counter electrode, showed a power conversion efficiency of 6.8% and outperformed their counterparts with an expensive Pt wire counter electrode by a factor of 2.5. These novel fiber-shaped graphene-RACNT energy conversion and storage devices are so flexible they can be woven into fabrics as power sources.

  1. A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

    NASA Astrophysics Data System (ADS)

    Shui, Qiong

    This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to

  2. Nitrogen doping in carbon nanotubes.

    PubMed

    Ewels, C P; Glerup, M

    2005-09-01

    Nitrogen doping of single and multi-walled carbon nanotubes is of great interest both fundamentally, to explore the effect of dopants on quasi-1D electrical conductors, and for applications such as field emission tips, lithium storage, composites and nanoelectronic devices. We present an extensive review of the current state of the art in nitrogen doping of carbon nanotubes, including synthesis techniques, and comparison with nitrogen doped carbon thin films and azofullerenes. Nitrogen doping significantly alters nanotube morphology, leading to compartmentalised 'bamboo' nanotube structures. We review spectroscopic studies of nitrogen dopants using techniques such as X-ray photoemission spectroscopy, electron energy loss spectroscopy and Raman studies, and associated theoretical models. We discuss the role of nanotube curvature and chirality (notably whether the nanotubes are metallic or semiconducting), and the effect of doping on nanotube surface chemistry. Finally we review the effect of nitrogen on the transport properties of carbon nanotubes, notably its ability to induce negative differential resistance in semiconducting tubes.

  3. Strain Sensitivity in Single Walled Carbon Nanotubes for Multifunctional Materials

    NASA Technical Reports Server (NTRS)

    Heath, D. M. (Technical Monitor); Smits, Jan M., VI

    2005-01-01

    Single walled carbon nanotubes represent the future of structural aerospace vehicle systems due to their unparalleled strength characteristics and demonstrated multifunctionality. This multifunctionality rises from the CNT's unique capabilities for both metallic and semiconducting electron transport, electron spin polarizability, and band gap modulation under strain. By incorporating the use of electric field alignment and various lithography techniques, a single wall carbon nanotube (SWNT) test bed for measurement of conductivity/strain relationships has been developed. Nanotubes are deposited at specified locations through dielectrophoresis. The circuit is designed such that the central, current carrying section of the nanotube is exposed to enable atomic force microscopy and manipulation in situ while the transport properties of the junction are monitored. By applying this methodology to sensor development a flexible single wall carbon nanotube (SWNT) based strain sensitive device has been developed. Studies of tensile testing of the flexible SWNT device vs conductivity are also presented, demonstrating the feasibility of using single walled HiPCO (high-pressure carbon monoxide) carbon nanotubes as strain sensing agents in a multi-functional materials system.

  4. Physical removal of metallic carbon nanotubes from nanotube network devices using a thermal and fluidic process.

    PubMed

    Ford, Alexandra C; Shaughnessy, Michael; Wong, Bryan M; Kane, Alexander A; Kuznetsov, Oleksandr V; Krafcik, Karen L; Billups, W Edward; Hauge, Robert H; Léonard, François

    2013-03-15

    Electronic and optoelectronic devices based on thin films of carbon nanotubes are currently limited by the presence of metallic nanotubes. Here we present a novel approach based on nanotube alkyl functionalization to physically remove the metallic nanotubes from such network devices. The process relies on preferential thermal desorption of the alkyls from the semiconducting nanotubes and the subsequent dissolution and selective removal of the metallic nanotubes in chloroform. The approach is versatile and is applied to devices post-fabrication.

  5. A novel investigation on carbon nanotube/ZnO, Ag/ZnO and Ag/carbon nanotube/ZnO nanowires junctions for harvesting piezoelectric potential on textile

    SciTech Connect

    Khan, Azam Edberg, Jesper; Nur, Omer; Willander, Magnus

    2014-07-21

    In the present work, three junctions were fabricated on textile fabric as an alternative substrate for harvesting piezoelectric potential. First junction was formed on ordinary textile as (textile/multi-walled carbon nanotube film/zinc oxide nanowires (S1: T/CNTs/ZnO NWs)) and the other two were formed on conductive textile with the following layer sequence: conductive textile/zinc oxide nanowires (S2: CT/ZnO NWs) and conductive textile/multi-walled carbon nanotubes film/zinc oxide nanowires (S3: CT/CNTs/ZnO NWs). Piezoelectric potential was harvested by using atomic force microscopy in contact mode for the comparative analysis of the generated piezoelectric potential. ZnO NWs were synthesized by using the aqueous chemical growth method. Surface analysis of the grown nanostructures was performed by using scanning electron microscopy and transmission electron microscopy. The growth orientation and crystalline size were studied by using X-ray diffraction technique. This study reveals that textile as an alternative substrate have many features like cost effective, highly flexible, nontoxic, light weight, soft, recyclable, reproducible, portable, wearable, and washable for nanogenerators fabrication with acceptable performance and with a wide choice of modification for obtaining large amount of piezoelectric potential.

  6. A novel investigation on carbon nanotube/ZnO, Ag/ZnO and Ag/carbon nanotube/ZnO nanowires junctions for harvesting piezoelectric potential on textile

    NASA Astrophysics Data System (ADS)

    Khan, Azam; Edberg, Jesper; Nur, Omer; Willander, Magnus

    2014-07-01

    In the present work, three junctions were fabricated on textile fabric as an alternative substrate for harvesting piezoelectric potential. First junction was formed on ordinary textile as (textile/multi-walled carbon nanotube film/zinc oxide nanowires (S1: T/CNTs/ZnO NWs)) and the other two were formed on conductive textile with the following layer sequence: conductive textile/zinc oxide nanowires (S2: CT/ZnO NWs) and conductive textile/multi-walled carbon nanotubes film/zinc oxide nanowires (S3: CT/CNTs/ZnO NWs). Piezoelectric potential was harvested by using atomic force microscopy in contact mode for the comparative analysis of the generated piezoelectric potential. ZnO NWs were synthesized by using the aqueous chemical growth method. Surface analysis of the grown nanostructures was performed by using scanning electron microscopy and transmission electron microscopy. The growth orientation and crystalline size were studied by using X-ray diffraction technique. This study reveals that textile as an alternative substrate have many features like cost effective, highly flexible, nontoxic, light weight, soft, recyclable, reproducible, portable, wearable, and washable for nanogenerators fabrication with acceptable performance and with a wide choice of modification for obtaining large amount of piezoelectric potential.

  7. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency

    NASA Astrophysics Data System (ADS)

    Funde, Adinath M.; Nasibulin, Albert G.; Gufran Syed, Hashmi; Anisimov, Anton S.; Tsapenko, Alexey; Lund, Peter; Santos, J. D.; Torres, I.; Gandía, J. J.; Cárabe, J.; Rozenberg, A. D.; Levitsky, Igor A.

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  8. Engineering carbon nanotubes and nanotube circuits using electrical breakdown.

    PubMed

    Collins, P G; Arnold, M S; Avouris, P

    2001-04-27

    Carbon nanotubes display either metallic or semiconducting properties. Both large, multiwalled nanotubes (MWNTs), with many concentric carbon shells, and bundles or "ropes" of aligned single-walled nanotubes (SWNTs), are complex composite conductors that incorporate many weakly coupled nanotubes that each have a different electronic structure. Here we demonstrate a simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes. We can remove shells of MWNTs stepwise and individually characterize the different shells. By choosing among the shells, we can convert a MWNT into either a metallic or a semiconducting conductor, as well as directly address the issue of multiple-shell transport. With SWNT ropes, similar selectivity allows us to generate entire arrays of nanoscale field-effect transistors based solely on the fraction of semiconducting SWNTs.

  9. Gate-Free Electrical Breakdown of Metallic Pathways in Single-Walled Carbon Nanotube Crossbar Networks.

    PubMed

    Li, Jinghua; Franklin, Aaron D; Liu, Jie

    2015-09-01

    Aligned single-walled carbon nanotubes (SWNTs) synthesized by the chemical vapor deposition (CVD) method have exceptional potential for next-generation nanoelectronics. However, the coexistence of semiconducting (s-) and metallic (m-) SWNTs remains a considerable challenge since the latter causes significant degradation in device performance. Here we demonstrate a facile and effective approach to selectively break all m-SWNTs by stacking two layers of horizontally aligned SWNTs to form crossbars and applying a voltage to the crossed SWNT arrays. The introduction of SWNT junctions amplifies the disparity in resistance between s- and m-pathways, leading to a complete deactivation of m-SWNTs while minimizing the degradation of the semiconducting counterparts. Unlike previous approaches that required an electrostatic gate to achieve selectivity in electrical breakdown, this junction process is gate-free and opens the way for straightforward integration of thin-film s-SWNT devices. Comparison to electrical breakdown in junction-less SWNT devices without gating shows that this junction-based breakdown method yields more than twice the average on-state current retention in the resultant s-SWNT arrays. Systematic studies show that the on/off ratio can reach as high as 1.4 × 10(6) with a correspondingly high retention of on-state current compared to the initial current value before breakdown. Overall, this method provides important insight into transport at SWNT junctions and a simple route for obtaining pure s-SWNT thin film devices for broad applications. PMID:26263184

  10. Carbon Nanotubes for Space Photovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Efstathiadis, Harry; Haldar, Pradeep; Landi, Brian J.; Denno, Patrick L.; DiLeo, Roberta A.; VanDerveer, William; Raffaelle, Ryne P.

    2007-01-01

    Carbon nanotubes (CNTs) can be envisioned as an individual graphene sheet rolled into a seamless cylinder (single-walled, SWNT), or concentric sheets as in the case of a multi-walled carbon nanotube (MWNT) (1). The role-up vector will determine the hexagonal arrangement and "chirality" of the graphene sheet, which will establish the nanotube to be metallic or semiconducting. The optoelectronic properties will depend directly on this chiral angle and the diameter of the SWNT, with semiconductor types exhibiting a band gap energy (2). Characteristic of MWNTs are the concentric graphene layers spaced 0.34 nm apart, with diameters from 10-200 nm and lengths up to hundreds of microns (2). In the case of SWNTs, the diameters range from 0.4 - 2 nm and lengths have been reported up to 1.5 cm (3). SWNTs have the distinguishable property of "bundling" together due to van der Waal's attractions to form "ropes." A comparison of these different structural types is shown in Figure 1. The use of SWNTS in space photovoltaic (PV) applications is attractive for a variety of reasons. Carbon nanotubes as a class of materials exhibit unprecedented optical, electrical, mechanical properties, with the added benefit of being nanoscale in size which fosters ideal interaction in nanomaterial-based devices like polymeric solar cells. The optical bandgap of semiconducting SWNTs can be varied from approx. 0.4 - 1.5 eV, with this property being inversely proportional to the nanotube diameter. Recent work at GE Global Research has shown where a single nanotube device can behave as an "ideal" pn diode (5). The SWNT was bridged over a SiO2 channel between Mo contacts and exhibited an ideality factor of 1, based on a fit of the current-voltage data using the diode equation. The measured PV efficiency under a 0.8 eV monochromatic illumination showed a power conversion efficiency of 0.2 %. However, the projected efficiency of these junctions is estimated to be > 5 %, especially when one considers the

  11. LDRD final report : chromophore-functionalized aligned carbon nanotube arrays.

    SciTech Connect

    Vance, Andrew L.; Yang, Chu-Yeu Peter; Krafcik, Karen Lee

    2011-09-01

    The goal of this project was to expand upon previously demonstrated single carbon nanotube devices by preparing a more practical, multi-single-walled carbon nanotube (SWNT) device. As a late-start, proof-of-concept project, the work focused on the fabrication and testing of chromophore-functionalized aligned SWNT field effect transistors (SWNT-FET). Such devices have not yet been demonstrated. The advantages of fabricating aligned SWNT devices include increased device cross-section to improve sensitivity to light, elimination of increased electrical resistance at nanotube junctions in random mat devices, and the ability to model device responses. The project did not achieve the goal of fabricating and testing chromophore-modified SWNT arrays, but a new SWNT growth capability was established that will benefit future projects. Although the ultimate goal of fabricating and testing chromophore-modified SWNT arrays was not achieved, the work did lead to a new carbon nanotube growth capability at Sandia/CA. The synthesis of dense arrays of horizontally aligned SWNTs is a developing area of research with significant potential for new discoveries. In particular, the ability to prepare arrays of carbon nanotubes of specific electronic types (metallic or semiconducting) could yield new classes of nanoscale devices.

  12. Microscopy of semiconducting materials

    NASA Astrophysics Data System (ADS)

    Pennycook, S. J.

    1991-04-01

    The purpose of the trip was to present an invited talk at the 7th Oxford Conference on Microscopy of Semiconducting Materials entitled, High-Resolution Z-Contrast Imaging of Heterostructures and Superlattices, (Oxford, United Kingdom) and to visit VG Microscopes, East Grinstead, for discussions on the progress of the Oak Ridge National Laboratory (ORNL) 300-kV high-resolution scanning transmission electron microscope (STEM), which is currently on order. The traveler also visited three other institutions with 100-kV STEMs that either have or intend to purchase the necessary modifications to provide Z-contrast capability similar to that of the existing ORNL machine. Specifically, Max-Planck Institut fuer Metallforschung (Stuttgart, Germany); Cambridge University, Department of Materials Science and Metallurgy (Cambridge, United Kingdom); and Cavendish Laboratory, Cambridge University (Cambridge, United Kingdom) were visited. In addition, discussions were held with C. Humphreys on the possibility of obtaining joint funding for collaborative research involving electron beam writing and Z-contrast imaging in the Cambridge and Oak Ridge STEMs, respectively.

  13. Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes

    NASA Astrophysics Data System (ADS)

    Ohnaka, Hirofumi; Kojima, Yoshihiro; Kishimoto, Shigeru; Ohno, Yutaka; Mizutani, Takashi

    2006-06-01

    Single-walled carbon nanotubes are grown using grid-inserted plasma-enhanced chemical vapor deposition (PECVD). The field effect transistor operation was confirmed using the PECVD grown carbon nanotubes (CNTs). The preferential growth of the semiconducting nanotubes was confirmed in the grid-inserted PECVD by measuring current-voltage (I-V) characteristics of the devices. Based on the measurement of the electrical breakdown of the metallic CNTs, the probability of growing the semiconducting nanotubes has been estimated to be more than 90%.

  14. Networks of semiconducting SWNTs: contribution of midgap electronic states to the electrical transport.

    PubMed

    Itkis, Mikhail E; Pekker, Aron; Tian, Xiaojuan; Bekyarova, Elena; Haddon, Robert C

    2015-08-18

    presence of midgap electronic states in the semiconducting SWNTs, which provide a source of low-energy excitations, which can contribute to hopping conductance along the nanotubes following fluctuation induced tunneling across the internanotube junctions, which together dominate the low temperature transport and limit the resistivity of the films. At high temperatures, the intrinsic carriers thermally activated across the bandgap as in a traditional semiconductor became available for band transport. The midgap states pin the Fermi level to the middle of the bandgap, and their origin is ascribed to defects in the SWNT walls. The presence of such midgap states has been reported in connection with scanning tunneling spectroscopy experiments, Coulomb blockade observations in low temperature electrical measurements, selective electrochemical deposition imaging, tip-enhanced Raman spectroscopy, high resolution photocurrent spectroscopy, and the modeling of the electronic density of states associated with various defects. Midgap states are present in conventional semiconductors, but what is unusual in the present context is the extent of their contribution to the electrical transport in networks of semiconducting SWNTs. In this Account, we sharpen the focus on the midgap states in SC-SWNTs, their effect on the electronic properties of SC-SWNT networks, and the importance of these effects on efforts to develop electronic and photonic applications of SC-SWNTs. PMID:26244611

  15. Networks of semiconducting SWNTs: contribution of midgap electronic states to the electrical transport.

    PubMed

    Itkis, Mikhail E; Pekker, Aron; Tian, Xiaojuan; Bekyarova, Elena; Haddon, Robert C

    2015-08-18

    presence of midgap electronic states in the semiconducting SWNTs, which provide a source of low-energy excitations, which can contribute to hopping conductance along the nanotubes following fluctuation induced tunneling across the internanotube junctions, which together dominate the low temperature transport and limit the resistivity of the films. At high temperatures, the intrinsic carriers thermally activated across the bandgap as in a traditional semiconductor became available for band transport. The midgap states pin the Fermi level to the middle of the bandgap, and their origin is ascribed to defects in the SWNT walls. The presence of such midgap states has been reported in connection with scanning tunneling spectroscopy experiments, Coulomb blockade observations in low temperature electrical measurements, selective electrochemical deposition imaging, tip-enhanced Raman spectroscopy, high resolution photocurrent spectroscopy, and the modeling of the electronic density of states associated with various defects. Midgap states are present in conventional semiconductors, but what is unusual in the present context is the extent of their contribution to the electrical transport in networks of semiconducting SWNTs. In this Account, we sharpen the focus on the midgap states in SC-SWNTs, their effect on the electronic properties of SC-SWNT networks, and the importance of these effects on efforts to develop electronic and photonic applications of SC-SWNTs.

  16. Modeling of Carbon Nanotube Schottky Barrier Modulation Due to Oxidation

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2002-01-01

    A model is proposed for the experimentally observed lower Schottky barrier for holes in air than in vacuum at a metallic electrode - semiconducting carbon nanotube (CNT) junction. In oxidation occurring in air, the negatively charged oxygen molecules on a material usually enhance the surface dipole and provide stronger electron confinement within the bulk. Thus the CNT electron affinity will increase in air. Then the Schottky barrier for holes will have to increase according to the standard band-alignment theory, but this is against the experiment. In order to overcome this difficulty, we propose a new Schottky barrier model, assuming there is a transition region between the electrode and the CNT and an appreciable potential can drop there. The role of the oxidation is to increase this potential drop with negatively charged oxygen molecules, leading to a lower Schottky barrier for holes. This mechanism prevails for both p- and n-CNTs. The model consistently explains all the reported CNT device experiments.

  17. Quantum capacitance modifies interionic interactions in semiconducting nanopores

    NASA Astrophysics Data System (ADS)

    Lee, Alpha A.; Vella, Dominic; Goriely, Alain

    2016-02-01

    Nanopores made with low-dimensional semiconducting materials, such as carbon nanotubes and graphene slit pores, are used in supercapacitors. For modelling purposes, it is often assumed that such pores screen ion-ion interactions like metallic pores, i.e. that screening leads to an exponential decay of the interaction potential with ion separation. By introducing a quantum capacitance that accounts for the density of states in the material, we show that ion-ion interactions in carbon nanotubes and graphene slit pores actually decay algebraically with ion separation. This result suggests a new avenue of capacitance optimization based on tuning the electronic structure of a pore: a marked enhancement in capacitance might be achieved by developing nanopores made with metallic materials or bulk semimetallic materials.

  18. Thermoelectrics: Carbon nanotubes get high

    NASA Astrophysics Data System (ADS)

    Crispin, Xavier

    2016-04-01

    Waste heat can be converted to electricity by thermoelectric generators, but their development is hindered by the lack of cheap materials with good thermoelectric properties. Now, carbon-nanotube-based materials are shown to have improved properties when purified to contain only semiconducting species and then doped.

  19. Thermal conductivity of chirality-sorted carbon nanotube networks

    NASA Astrophysics Data System (ADS)

    Lian, Feifei; Llinas, Juan P.; Li, Zuanyi; Estrada, David; Pop, Eric

    2016-03-01

    The thermal properties of single-walled carbon nanotubes (SWNTs) are of significant interest, yet their dependence on SWNT chirality has been, until now, not explored experimentally. Here, we used electrical heating and infrared thermal imaging to simultaneously study thermal and electrical transport in chirality-sorted SWNT networks. We examined solution processed 90% semiconducting, 90% metallic, purified unsorted (66% semiconducting), and as-grown HiPco SWNT films. The thermal conductivities of these films range from 80 to 370 W m-1 K-1 but are not controlled by chirality, instead being dependent on the morphology (i.e., mass and junction density, quasi-alignment) of the networks. The upper range of the thermal conductivities measured is comparable to that of the best metals (Cu and Ag), but with over an order of magnitude lower mass density. This study reveals important factors controlling the thermal properties of light-weight chirality-sorted SWNT films, for potential thermal and thermoelectric applications.

  20. Computational study of edge configuration and the diameter effects on the electrical transport of graphdiyne nanotubes

    NASA Astrophysics Data System (ADS)

    Shohany, Boshra Ghanbari; Roknabadi, Mahmood Rezaee; Kompany, Ahmad

    2016-10-01

    In this work, the structural and electronic properties of armchair and zigzag graphdiyne nanotubes (GDYNTs) have been investigated using the density functional theory (DFT). All the nanotubes under investigation exhibited semiconducting behavior. The edge configuration and diameter effects on the electrical transport of graphdiyne nanotubes are studied using non-equilibrium Green's function (NEGF) method. Our results showed that the currents in the zigzag graphdiyne nanotubes are remarkably higher comparing to the armchair nanotubes.

  1. Carbon Nanotube Based Molecular Electronics

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Saini, Subhash; Menon, Madhu

    1998-01-01

    Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

  2. Surface physics of semiconducting nanowires

    NASA Astrophysics Data System (ADS)

    Amato, Michele; Rurali, Riccardo

    2016-02-01

    Semiconducting nanowires (NWs) are firm candidates for novel nanoelectronic devices and a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 nm, present exotic quantum effects due to the confinement of the wave functions, e.g. widening of the electronic band-gap, deepening of the dopant states. However, although several reports of sub-10 nm wires exist to date, the most common NWs have diameters that range from 20 to 200 nm, where these quantum effects are absent or play a very minor role. Yet, the research activity on this field is very intense and these materials still promise to provide an important paradigm shift for the design of emerging electronic devices and different kinds of applications. A legitimate question is then: what makes a nanowire different from bulk systems? The answer is certainly the large surface-to-volume ratio. In this article we discuss the most salient features of surface physics and chemistry in group-IV semiconducting nanowires, focusing mostly on Si NWs. First we review the state-of-the-art of NW growth to achieve a smooth and controlled surface morphology. Next we discuss the importance of a proper surface passivation and its role on the NW electronic properties. Finally, stressing the importance of a large surface-to-volume ratio and emphasizing the fact that in a NW the surface is where most of the action takes place, we discuss molecular sensing and molecular doping.

  3. Doping of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Kutler, Paul (Technical Monitor)

    1997-01-01

    Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

  4. Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p-n junction hybrids with electrodeposited Cu2O

    NASA Astrophysics Data System (ADS)

    Debgupta, Joyashish; Devarapalli, Ramireddy; Rahman, Shakeelur; Shelke, Manjusha V.; Pillai, Vijayamohanan K.

    2014-07-01

    Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar device prepared with electrodeposited CdSe films (not nanotubes) and Cu2O on FTO. This has been attributed to the hollow 1-D nature of CdSe NTs, which provides enhanced inner and outer surface areas for better absorption of light and also assists faster transport of photogenerated charge carriers.Vertically aligned, hollow nanotubes of CdSe are grown on fluorine doped tin oxide (FTO) coated glass substrates by ZnO nanowire template-assisted electrodeposition technique, followed by selective removal of the ZnO core using NH4OH. A detailed mechanism of nucleation and anisotropic growth kinetics of nanotubes have been studied by a combination of characterization tools such as chronoamperometry, SEM and TEM. Interestingly, ``as grown'' CdSe nanotubes (CdSe NTs) on FTO coated glass plates behave as n-type semiconductors exhibiting an excellent photo-response (with a generated photocurrent density value of ~470 μA cm-2) while in contact with p-type Cu2O (p-type semiconductor, grown separately on FTO plates) because of the formation of a n-p heterojunction (type II). The observed photoresponse is 3 times higher than that of a similar

  5. Enhanced Thermoelectric Properties in Tailored Semiconducting SWCNT Networks

    NASA Astrophysics Data System (ADS)

    Avery, A. D.; Zhou, B. H.; Lee, J.; Lee, E.; Miller, E. M.; Ihly, R.; Wesenberg, D.; Mistry, K. S.; Guillot, S. L.; Zink, B. L.; Kim, Y.; Blackburn, J. L.; Ferguson, A. J.

    Single-walled carbon nanotubes (SWCNTs) are a versatile electronic material being explored as cost-effective, high-performance alternative in a variety of renewable energy applications. In this talk, we present a series of experiments designed to probe the thermal and electrical transport through networks of semiconducting SWCNT dispersed in matrices of polyfluorene polymers. We measured electrical transport as a function of hole density to explore the coupling between the electrical conductivity and Seebeck coefficient (thermopower) in the s-SWCNT networks. These networks exhibit large thermopowers > 1000 μV/K at very low hole densities. Thermopower values remain high at high doping levels, resulting in thermoelectric power factors greater than 340 μW/m K. Finally, we present measurements that demonstrate our doping process significantly reduces the thermal conductivity relative to undoped networks suggesting s-SWCNTs are a viable material for realizing thermally stable room temperature thermoelectric devices fashioned from inexpensive and abundant organic constituents.

  6. Polymer-Decorated Carbon Nanotubes as Transducers for Label-Free Photonic Biosensors.

    PubMed

    Villemin, Elise; Gravel, Edmond; Izard, Nicolas; Filoramo, Arianna; Vivien, Laurent; Doris, Eric

    2015-12-14

    A biosensor taking advantage of the optical properties of sorted carbon nanotubes has been developed. A polyfluorene polymer bearing azido groups was synthesized and used for the selective extraction of semi-conducting nanotubes from the bulk population. The resulting polymer-decorated nanotubes were then conjugated by click-chemistry to a ligand unit (biotin), and the sensing properties of the biotinylated nanotubes were investigated by photoluminescence measurements, upon interaction with the streptavidin target.

  7. Assembly of ordered carbon shells on semiconducting nanomaterials

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2012-10-02

    In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

  8. Assembly of ordered carbon shells on semiconducting nanomaterials

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2010-05-11

    In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated with ordered carbon shells. In some aspects a method for producing encapsulated semiconducting nanomaterials is disclosed. In some embodiments applications of encapsulated semiconducting nanomaterials are described.

  9. Experimental imaging of silicon nanotubes

    NASA Astrophysics Data System (ADS)

    De Crescenzi, M.; Castrucci, P.; Scarselli, M.; Diociaiuti, M.; Chaudhari, Prajakta S.; Balasubramanian, C.; Bhave, Tejashree M.; Bhoraskar, S. V.

    2005-06-01

    Transmission electron microscopy (TEM), electron energy loss near edge structures (EELNES) and scanning tunneling microscopy (STM) were used to distinguish silicon nanotubes (SiNT) among the reaction products of a gas phase condensation synthesis. TEM images exhibit the tubular nature with a well-defined wall. The EELNES spectra performed on each single nanotube show that they are constituted by nonoxidized silicon atoms. STM images show that they have diameter ranging from 2 to 35 nm, have an atomic arrangement compatible with a puckered structure and different chiralities. Moreover, the I-V curves showed that SiNT can be semiconducting as well as metallic in character.

  10. Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors

    PubMed Central

    Byeon, Hye-Hyeon; Lee, Seung-Woo; Lee, Eun-Hee; Kim, Woong; Yi, Hyunjung

    2016-01-01

    Delicately assembled composites of semiconducting nanomaterials and biological materials provide an attractive interface for emerging applications, such as chemical/biological sensors, wearable health monitoring devices, and therapeutic agent releasing devices. The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. In this work, we demonstrate that high performance FETs can be fabricated with a hydrodynamically assembled composite, a semiconducting nanomesh, of semiconducting single-walled carbon nanotubes (S-SWNTs) and a genetically engineered M13 phage to show strong binding affinity toward SWNTs. The semiconducting nanomesh enables a high on/off ratio (~104) of FETs. We also show that the threshold voltage and the channel current of the nanomesh FETs are sensitive to the change of the M13 phage surface charge. This biological gate effect of the phage enables the detection of biologically important molecules such as dopamine and bisphenol A using nanomesh-based FETs. Our results provide a new insight for the preparation of composite material platform for highly controllable bio/electronics interfaces. PMID:27762315

  11. Deterministic Modelling of Carbon Nanotube Near-Infrared Solar Cells

    NASA Astrophysics Data System (ADS)

    Bellisario, Darin

    2015-03-01

    With solution-process-ability, scale-able fabrication and purification, and cheap input materials, semiconducting single-walled carbon nanotube (SWNT) networks represent promising materials for near-IR solar cell (SC) applications. This promise has motivated a body of work not only developing solar cells but also exploring alignment/deposition methods and SWNT photovoltaic (PV) physics. Despite this interest, there is to date no quantitative model of SWNT solar cell operation analogous to bulk semiconductor p-n junction PVs, allowing a rigorous understanding of the physical tradeoffs driving experimental observations and informing what research will enable technological progress. In this work we have derived the steady state operation of planar heterojunction SWNT PVs from the fundamental light absorption, exciton transport, and free carrier transport behaviors of single nanotubes. Our method can treat arbitrary distributions of nanotube chiralities, lengths, orientations, defect types and concentration, bundle fraction and size, density, dielectric environment, electrode combinations, etc. We achieve this by treating individual SWNT properties as random variables, and describing the network by the dependent distributions of those properties, yielding coupled stochastic differential equations for light absorption, exciton transport, and free carrier transport. Applying the model to monochiral (6,5) films in aligned and isotropic configurations, we find that there is a strongly optimal film thickness at a given nanotube network density and orientation, reflecting an inherent tradeoff between light absorption (i.e. exciton generation) and diffusion to the electrodes. This optimal shifts lower with increasing density, and is ultra-thin (<10 nm) for horizontally-aligned films but 50-200 nm for vertically aligned films. We show that due to weak inter-SWNT exciton transport relative to exceptional intra-SWNT diffusion, vertically-aligned films are unambiguously favored

  12. First-principles study of graphene - carbon nanotube contacts

    NASA Astrophysics Data System (ADS)

    Cook, Brandon; Varga, Kalman

    2012-02-01

    The electron transport properties of carbon nanotube -- graphene junctions are investigated with first-principles total energy and electron transport calculations. By combining the advantageous material properties of graphene and nanotubes one can create all carbon hybrid architectures with properties that are particularly well suited to applications. The p-type Schottky barrier height is calculated in model junctions with (8,0) and (10,0) nanotubes in a top-contact configuration. Results indicate a lower barrier in carbon nanotube -- graphene junctions than in other carbon nanotue -- metal systems.

  13. Electronic and Mechanical Properties of Hydrogen Functionalized Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Yang, Liu; Han, Jie; Jaffe, Richard L.; Arnold, Jim (Technical Monitor)

    2001-01-01

    We examined the electronic and mechanical properties of hydrogen functionalized carbon nanotubes. The functionalization pattern covers two extreme groups. One group has randomly selected functionalization sites including one to twenty percent of the carbon atoms. The other group has regularly patterned functional sites parallel to the tube axis. Metallic, small-gap semiconducting and large-gap semiconducting carbon nanotubes are studied. The results reveal that the electronic properties of the tubes are very sensitive to the degree of functionalization, with even one percent functionalization being enough to render metallic tubes semiconducting. On the other hand, the mechanical properties, like tensile modulus, are much less sensitive to functionalization. For carbon nanotubes functionalized with specific patterns, the electric properties depends strongly on the nature of the functionalization pattern.

  14. All carbon nanotubes are not created equal

    SciTech Connect

    Geohegan, David B; Puretzky, Alexander A; Rouleau, Christopher M

    2010-01-01

    This chapter presents the various factors that enter into consideration when choosing the source of carbon nanotubes for a specific application. Carbon nanotubes are giant molecules made of pure carbon. They have captured the imagination of the scientific community by the unique structure that provides superior physical, chemical, and electrical properties. However, a surprisingly wide disparity exists between the intrinsic properties determined under ideal conditions and the properties that carbon nanotubes exhibit in real world situations. The lack of uniformity in carbon nanotube properties is likely to be the main obstacle holding back the development of carbon nanotube applications. This tutorial addresses the nonuniformity of carbon nanotube properties from the synthesis standpoint. This synthesis-related nonuniformity is on top of the intrinsic chirality distribution that gives the ~1:2 ratio of metallic to semiconducting nanotubes. From the standpoint of carbon bonding chemistry the variation in the quality and reproducibility of carbon nanotube materials is not unexpected. It is an intrinsic feature that is related to the metastability of carbon structures. The extent to which this effect is manifested in carbon nanotube formation is governed by the type and the kinetics of the carbon nanotube synthesis reaction. Addressing this variation is critical if nanotubes are to live up to the potential already demonstrated by their phenomenal physical properties.

  15. Efficient tandem and triple-junction polymer solar cells.

    PubMed

    Li, Weiwei; Furlan, Alice; Hendriks, Koen H; Wienk, Martijn M; Janssen, René A J

    2013-04-17

    We demonstrate tandem and triple-junction polymer solar cells with power conversion efficiencies of 8.9% and 9.6% that use a newly designed, high molecular weight, small band gap semiconducting polymer and a matching wide band gap polymer.

  16. Efficient tandem and triple-junction polymer solar cells.

    PubMed

    Li, Weiwei; Furlan, Alice; Hendriks, Koen H; Wienk, Martijn M; Janssen, René A J

    2013-04-17

    We demonstrate tandem and triple-junction polymer solar cells with power conversion efficiencies of 8.9% and 9.6% that use a newly designed, high molecular weight, small band gap semiconducting polymer and a matching wide band gap polymer. PMID:23544881

  17. Structure and electronic properties of saturated and unsaturated gallium nitride nanotubes

    SciTech Connect

    Wang, Zhiguo; Wang, Shengjie; Li, Jingbo; Gao, Fei; Weber, William J.

    2009-11-05

    The atomic and electronic structures of saturated and unsaturated GaN nanotubes along the [001] direction with (100) lateral facets are studied using first-principles calculations. Atomic relaxation of nanotubes shows that appreciable distortion occurs in the unsaturated nanotubes. All the nanotubes considered, including saturated and unsaturated ones, exhibit semiconducting, with a direct band gap. Surface states arisen from the threefold-coordinated N and Ga atoms at the lateral facets exist inside the bulk-like band gap. When the nanotubes saturated with hydrogen, these dangling bond bands are removed from the band gap, but the band gap decreases with increasing the wall thickness of the nanotubes.

  18. Single carbon nanotube photovoltaic device

    NASA Astrophysics Data System (ADS)

    Barkelid, M.; Zwiller, V.

    2013-10-01

    Here we present photocurrent measurements on a single suspended carbon nanotube p-n junction. The p-n junction was induced by electrostatic doping by local gates, and the E11 and E22 resonances in the nanotube could be probed using photocurrent spectroscopy. Current-voltage characteristics were recorded, revealing an enhanced optoelectronic response on resonance. The internal power conversion efficiency for the nanotube diode was extracted on and off resonance with the E11 and E22, and a large internal power conversion efficiency was observed. An internal efficiency of up to 23% is reported for the E11, showing the potential of carbon nanotubes to be used as the active element in photovoltaic devices. Finally, a photovoltaic device is proposed which exploits this enhanced efficiency.

  19. Josephson junction

    DOEpatents

    Wendt, Joel R.; Plut, Thomas A.; Martens, Jon S.

    1995-01-01

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material.

  20. Josephson junction

    DOEpatents

    Wendt, J.R.; Plut, T.A.; Martens, J.S.

    1995-05-02

    A novel method for fabricating nanometer geometry electronic devices is described. Such Josephson junctions can be accurately and reproducibly manufactured employing photolithographic and direct write electron beam lithography techniques in combination with aqueous etchants. In particular, a method is described for manufacturing planar Josephson junctions from high temperature superconducting material. 10 figs.

  1. Ubiquity of Exciton Localization in Cryogenic Carbon Nanotubes

    PubMed Central

    2016-01-01

    We present photoluminescence studies of individual semiconducting single-wall carbon nanotubes at room and cryogenic temperatures. From the analysis of spatial and spectral features of nanotube photoluminescence, we identify characteristic signatures of unintentional exciton localization. Moreover, we quantify the energy scale of exciton localization potentials as ranging from a few to a few tens of millielectronvolts and stemming from both environmental disorder and shallow covalent side-wall defects. Our results establish disorder-induced crossover from the diffusive to the localized regime of nanotube excitons at cryogenic temperatures as a ubiquitous phenomenon in micelle-encapsulated and as-grown carbon nanotubes. PMID:27105355

  2. Single Wall Nanotube Type-Specific Functionalization and Separation

    NASA Technical Reports Server (NTRS)

    Boul, Peter; Nikolaev, Pavel; Sosa, Edward; Arepalli, Sivaram; Yowell, Leonard

    2008-01-01

    Metallic single-wall carbon nanotubes were selectively solubilized in THF and separated from semiconducting nanotubes. Once separated, the functionalized metallic tubes were de-functionalized to restore their metallic band structure. Absorption and Raman spectroscopy of the enriched samples support conclusions of the enrichment of nanotube samples by metallic type. A scalable method for enriching nanotube conductive type has been developed. Raman and UV-Vis data indicate SWCNT reaction with dodecylbenzenediazonium results in metallic enrichment. It is expected that further refinement of this techniques will lead to more dramatic separations of types and diameters.

  3. Ubiquity of Exciton Localization in Cryogenic Carbon Nanotubes.

    PubMed

    Hofmann, Matthias S; Noé, Jonathan; Kneer, Alexander; Crochet, Jared J; Högele, Alexander

    2016-05-11

    We present photoluminescence studies of individual semiconducting single-wall carbon nanotubes at room and cryogenic temperatures. From the analysis of spatial and spectral features of nanotube photoluminescence, we identify characteristic signatures of unintentional exciton localization. Moreover, we quantify the energy scale of exciton localization potentials as ranging from a few to a few tens of millielectronvolts and stemming from both environmental disorder and shallow covalent side-wall defects. Our results establish disorder-induced crossover from the diffusive to the localized regime of nanotube excitons at cryogenic temperatures as a ubiquitous phenomenon in micelle-encapsulated and as-grown carbon nanotubes.

  4. Gap Junctions

    PubMed Central

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  5. Poly(3-hexylthiophene)/multiwalled carbon hybrid coaxial nanotubes: nanoscale rectification and photovoltaic characteristics.

    PubMed

    Kim, Kihyun; Shin, Ji Won; Lee, Yong Baek; Cho, Mi Yeon; Lee, Suk Ho; Park, Dong Hyuk; Jang, Dong Kyu; Lee, Cheol Jin; Joo, Jinsoo

    2010-07-27

    We fabricate hybrid coaxial nanotubes (NTs) of multiwalled carbon nanotubes (MWCNTs) coated with light-emitting poly(3-hexylthiophene) (P3HT). The p-type P3HT material with a thickness of approximately 20 nm is electrochemically deposited onto the surface of the MWCNT. The formation of hybrid coaxial NTs of the P3HT/MWCNT is confirmed by a transmission electron microscope, FT-IR, and Raman spectra. The optical and structural properties of the hybrid NTs are characterized using ultraviolet and visible absorption, Raman, and photoluminescence (PL) spectra where, it is shown that the PL intensity of the P3HT materials decreases after the hybridization with the MWCNTs. The current-voltage (I-V) characteristics of the outer P3HT single NT show the semiconducting behavior, while ohmic behavior is observed for the inner single MWCNT. The I-V characteristics of the hybrid junction between the outer P3HT NT and the inner MWCNT, for the hybrid single NT, exhibit the characteristics of a diode (i.e., rectification), whose efficiency is clearly enhanced with light irradiation. The rectification effect of the hybrid single NT has been analyzed in terms of charge tunneling models. The quasi-photovoltaic effect is also observed at low bias for the P3HT/MWCNT hybrid single NT.

  6. Semiconducting compounds and devices incorporating same

    SciTech Connect

    Marks, Tobin J; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

    2014-06-17

    Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

  7. Semiconducting compounds and devices incorporating same

    DOEpatents

    Marks, Tobin J.; Facchetti, Antonio; Boudreault, Pierre-Luc; Miyauchi, Hiroyuki

    2016-01-19

    Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability. Organic transistor and photovoltaic devices incorporating the present compounds as the active layer exhibit good device performance.

  8. Spectroscopy of Optical Excitations in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Ma, Yingzhong

    2006-03-01

    Understanding the optical spectra and electronic excited state dynamics of carbon naotubes is important both for fundamental research and a wide variety of potential applications. In this presentation, we will report the results of a systematic study on semiconducting single-walled carbon nanotubes (SWNTs) obtained by utilizing complementary femtosecond spectroscopic techniques, including fluorescence up-conversion, frequency-resolved transient absorption, and three-pulse photon echo peakshift (3PEPS) spectroscopy. Our efforts have focused on optically selective detection of the spectra and dynamics associated with structurally distinct semiconducting SWNT species. Using individual nanotube enriched micelle-dispersed SWNT preparations, in combination with resonant excitation and detection, has enabled us to independently access selected species, such as the (8,3), (6,5), (7,5), (11,0), (7,6) and (9,5) nanotubes. We will discuss the following topics: (1) the excitonic nature of the elementary excitation and its unambiguous identification from direct determination of the exciton binding energy for a selected semiconducting nanotube, the (8,3) tube; (2) the spectroscopic and dynamical signatures of exciton-exciton annihilation and its predominant role in governing ultrafast excited state relaxation; (3) the annihilation-concomitant exciton dissociation and the spectroscopic and dynamic features of the resulting electron-hole continuum; (4) timescales characterizing the ultrafast thermalization processes. In addition, we will demonstrate the power of 3PEPS spectroscopy to elucidate the spectral properties and dynamics of SWNTs. This work was supported by the NSF.

  9. High-density integration of carbon nanotubes via chemical self-assembly

    NASA Astrophysics Data System (ADS)

    Park, Hongsik; Afzali, Ali; Han, Shu-Jen; Tulevski, George S.; Franklin, Aaron D.; Tersoff, Jerry; Hannon, James B.; Haensch, Wilfried

    2012-12-01

    Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 109 cm-2--two orders of magnitude higher than previous reports. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity.

  10. Physical and Electronic Isolation of Carbon Nanotube Conductors

    NASA Technical Reports Server (NTRS)

    OKeeffe, James; Biegel, Bryan (Technical Monitor)

    2001-01-01

    Multi-walled nanotubes are proposed as a method to electrically and physically isolate nanoscale conductors from their surroundings. We use tight binding (TB) and density functional theory (DFT) to simulate the effects of an external electric field on multi-wall nanotubes. Two categories of multi-wall nanotube are investigated, those with metallic and semiconducting outer shells. In the metallic case, simulations show that the outer wall effectively screens the inner core from an applied electric field. This offers the ability to reduce crosstalk between nanotube conductors. A semiconducting outer shell is found not to perturb an electric field incident on the inner core, thereby providing physical isolation while allowing the tube to remain electrically coupled to its surroundings.

  11. Dispersionless propagation of electron wavepackets in single-walled carbon nanotubes

    SciTech Connect

    Rosati, Roberto; Rossi, Fausto; Dolcini, Fabrizio

    2015-06-15

    We investigate the propagation of electron wavepackets in single-walled carbon nanotubes via a Lindblad-based density-matrix approach that enables us to account for both dissipation and decoherence effects induced by various phonon modes. We show that, while in semiconducting nanotubes the wavepacket experiences the typical dispersion of conventional materials, in metallic nanotubes its shape remains essentially unaltered, even in the presence of the electron-phonon coupling, up to micron distances at room temperature.

  12. Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

    DOEpatents

    Rogers, John A; Cao, Qing; Alam, Muhammad; Pimparkar, Ninad

    2015-02-03

    The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

  13. Density functional investigation of epitaxial silicene on semiconducting substrates

    NASA Astrophysics Data System (ADS)

    Das, G. P.; Bhattacharya, A.; Bhattacharya, S.

    2013-03-01

    In spite of the uniqueness of carbon to form pristine fullerene, nanotube and graphene, there have been attempts to replicate these nanostructures with silicon. Most recently, the free-standing quasi-2D honeycomb structure of silicene has been predicted to be stable with linear band dispersion and Dirac cone feature similar to graphene. Epitaxial silicene on Ag(110) and on ZrB2(0001) substrates have already been reported. We have carried out first principles density functional investigation of the structural and electronic properties of silicene monolayer on various wurzite structured III-V and II-VI semiconducting substrates, with metal terminated (MT) as well as non-metal terminated (NMT) top surface. The binding energies of silicene on MT semiconductors are in the range 0.5 - 0.7 eV/atom and their behavior can be metallic, semi-metallic or even magnetic, depending on the choice of substrates. The silicene overlayer undergoes n-/p-type doping on MT/NMT semiconductor surface, depending upon the direction of the charge transfer.

  14. Label-free immunodetection with CMOS-compatible semiconducting nanowires.

    PubMed

    Stern, Eric; Klemic, James F; Routenberg, David A; Wyrembak, Pauline N; Turner-Evans, Daniel B; Hamilton, Andrew D; LaVan, David A; Fahmy, Tarek M; Reed, Mark A

    2007-02-01

    Semiconducting nanowires have the potential to function as highly sensitive and selective sensors for the label-free detection of low concentrations of pathogenic microorganisms. Successful solution-phase nanowire sensing has been demonstrated for ions, small molecules, proteins, DNA and viruses; however, 'bottom-up' nanowires (or similarly configured carbon nanotubes) used for these demonstrations require hybrid fabrication schemes, which result in severe integration issues that have hindered widespread application. Alternative 'top-down' fabrication methods of nanowire-like devices produce disappointing performance because of process-induced material and device degradation. Here we report an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrate the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response. This approach eliminates the need for hybrid methods and enables system-scale integration of these sensors with signal processing and information systems. Additionally, the ability to monitor antibody binding and sense the cellular immune response in real time with readily available technology should facilitate widespread diagnostic applications. PMID:17268465

  15. Graphene-carbon nanotube hybrid materials and use as electrodes

    DOEpatents

    Tour, James M.; Zhu, Yu; Li, Lei; Yan, Zheng; Lin, Jian

    2016-09-27

    Provided are methods of making graphene-carbon nanotube hybrid materials. Such methods generally include: (1) associating a graphene film with a substrate; (2) applying a catalyst and a carbon source to the graphene film; and (3) growing carbon nanotubes on the graphene film. The grown carbon nanotubes become covalently linked to the graphene film through carbon-carbon bonds that are located at one or more junctions between the carbon nanotubes and the graphene film. In addition, the grown carbon nanotubes are in ohmic contact with the graphene film through the carbon-carbon bonds at the one or more junctions. The one or more junctions may include seven-membered carbon rings. Also provided are the formed graphene-carbon nanotube hybrid materials.

  16. Excitons in the optical properties of nanotubes

    NASA Astrophysics Data System (ADS)

    Spataru, Catalin

    2006-03-01

    We present ab initio calculation of self-energy and electron-hole interaction (excitonic) effects on the optical spectra of single-walled carbon and BN nanotubes. We employed a many-electron Green's function approach that determines both the quasiparticle and optical excitations from first principles. We found important many-electron effects that explain many of the puzzling experimental findings in the optical spectrum of these quasi-one dimensional systems, and the calculated spectra are in excellent quantitative agreement with measurements. In carbon nanotubes, excitons can bind by as much as one eV in semiconducting nanotubes^a). We discovered that bound excitons also exist in metallic carbon nanotubes with binding energy of many tens of meVs^a). Excitonic effects are shown to be even more inportant in BN nanotubes than in carbon nanotubes. Unlike the carbon nanotubes, theory predicts that excitons in some BN nanotubes are comprised of coherent superposition of transitions from several different subband pairs^b). We have also calculated the radiative lifetime of excitons in semiconducting carbon nanotubes. Assuming a thermal occupation of bright and dark exciton bands, we find an effective radiative lifetime of the order of 10 ns at room temperature, in good accord with recent experiments^c). a) C.D. Spataru, S. Ismail-Beigi, L.X. Benedict and S.G. Louie, Phys. Rev. Lett. 92, 077402 (2004). b) C.-H. Park, C.D. Spataru and S.G. Louie, to be published. c) C.D. Spataru, S. Ismail-Beigi, R.B. Capaz and S.G. Louie, in press Phys. Rev. Lett.

  17. Understanding electronic structure and transport properties in nanoscale junctions

    NASA Astrophysics Data System (ADS)

    Dhungana, Kamal B.

    Understanding the electronic structure and the transport properties of nanoscale materials are pivotal for designing future nano-scale electronic devices. Nanoscale materials could be individual or groups of molecules, nanotubes, semiconducting quantum dots, and biomolecules. Among these several alternatives, organic molecules are very promising and the field of molecular electronics has progressed significantly over the past few decades. Despite these progresses, it has not yet been possible to achieve atomic level control at the metal-molecule interface during a conductance measurement, which hinders the progress in this field. The lack of atomic level information of the interface also makes it much harder for theorist to interpret the experimental results. To identify the junction configuration that possibly exists during the experimental measurement of conductance in molecular junction, we created an ensemble of Ruthanium-bis(terpyridine) molecular devices, and studied the transport behavior in these molecular junctions. This helps us identifying the junction geometry that yields the experimentally measured current-voltage characteristics. Today's electronic devices mostly ignore the spin effect of an electron. The inclusion of spin effect of an electron on solid-state transistor allows us to build more efficient electronic devices; this also alleviates the problem of huge heat dissipation in the nanoscale electronic devices. Different materials have been utilized to build three terminals spin transistor since its inception in 1950. In search of suitable candidates for the molecular spin transistor, we have recently designed a spin-valve transistor based on an organometallic molecule; a large amplification (320 %) in tunnel magneto-resistance (TMR) is found to occur at an experimentally accessible gate field. This suggests that the organic molecules can be utilized for making the next generation three terminal spintronic devices. Similarly, we have designed a

  18. INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Interaction of Methane with Single-Walled Carbon Nanotubes: Role of Defects, Curvature and Nanotubes Type

    NASA Astrophysics Data System (ADS)

    Ganji, M. D.; Asghary, M.; Najafi, A. A.

    2010-05-01

    We investigate the interaction of single-walled carbon nanotubes (SWCNTs) and methane molecule from the first principles. Adsorption energies are calculated, and methane affinities for the typical semiconducting and metallic nanotubes are compared. We also discuss role of the structural defects and nanotube curvature on the adsorption capability of the SWCNTs. We could observe larger adsorption energies for the metallic CNTs in comparison with the semiconducting CNTs. The obtained results for the zig zag nanotubes with various diameters reveal that the adsorption energy is higher for nanotubes with larger diameters. For defected tubes the adsorption energies are calculated for various configurations such as methane molecule approaching to the defect sites pentagon, hexagon, and heptagon in the tube surface. The results show that the introduce defects have an important contribution to the adsorption mechanism of the methane on SWNTs.

  19. Real function of semiconducting polymer in GaAs/polymer planar heterojunction solar cells.

    PubMed

    Yan, Liang; You, Wei

    2013-08-27

    We systematically investigated GaAs/polymer hybrid solar cells in a simple planar junction, aiming to fundamentally understand the function of semiconducting polymers in GaAs/polymer-based heterojunction solar cells. A library of semiconducting polymers with different band gaps and energy levels were evaluated in GaAs/polymer planar heterojunctions. The optimized thickness of the active polymer layer was discovered to be ultrathin (~10 nm). Further, the open-circuit voltage (Voc) of such GaAs/polymer planar heterojunctions was fixed around 0.6 V, regardless of the HOMO energy level of the polymer employed. On the basis of this evidence and others, we conclude that n-type GaAs/polymer planar heterojunctions are not type II heterojunctions as originally assumed. Instead, n-type GaAs forms a Schottky barrier with its corresponding anode, while the semiconducting polymer of appropriate energy levels can function as hole transport layer and/or electron blocking layer. Additionally, we discover that both GaAs surface passivation and thermal annealing can improve the performance of GaAs/polymer hybrid solar cells.

  20. On field emission from a semiconducting substrate

    NASA Astrophysics Data System (ADS)

    Waters, Richard; Van Zeghbroeck, Bart

    1999-10-01

    A theoretical examination of field emission from the conduction band of a semiconducting substrate is reported. The analysis includes a comparison with Fowler-Nordheim theory, and it is concluded that the formalism of the Fowler-Nordheim theory is incorrect when applied to carriers originating from a semiconducting substrate. The use of a Fowler-Nordheim analysis results in an error in the extraction of the barrier height that is dependent upon the applied electric field across the oxide, conduction band offset, and temperature. A lower limit of the error was calculated to be between 5% and 15%. An analytical expression is developed to describe the field emission of electrons from the conduction band of a semiconductor.

  1. TEM-nanoindentation studies of semiconducting structures.

    PubMed

    Le Bourhis, E; Patriarche, G

    2007-01-01

    This paper reviews the application of nanoindentation coupled with transmission electron microscopy (TEM) to investigations of the plastic behaviour of semiconducting structures and its implication for device design. Instrumented nanoindentation has been developed to extract the mechanical behaviour of small volumes scaled to those encountered in semiconductor heterostructures. We illustrate that TEM is a powerful complementary tool for the study of local plasticity induced by nanoindentation. TEM-nanoindentation allows for detailed understanding of the plastic deformation in semiconducting structures and opens practical routes for improvement of devices. Performances of heterostructures are deteriously affected by dislocations that relax the lattice mismatched layers. Different ways to obtain compliant substructures are being developed in order to concentrate the plastic relaxation underneath the heterostructure. Such approaches allow for mechanical design of micro- and opto-electronic devices to be considered throughout the fabrication process. PMID:16901706

  2. Low bandgap semiconducting polymers for polymeric photovoltaics.

    PubMed

    Liu, Chang; Wang, Kai; Gong, Xiong; Heeger, Alan J

    2016-08-22

    In order to develop high performance polymer solar cells (PSCs), full exploitation of the sun-irradiation from ultraviolet (UV) to near infrared (NIR) is one of the key factors to ensure high photocurrents and thus high efficiency. In this review, five of the effective design rules for approaching LBG semiconducting polymers with high molar absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic solvents are overviewed. These design stratagems include fused heterocycles for facilitating π-electron flowing along the polymer backbone, groups/atoms bridging adjacent rings for maintaining a high planarity, introduction of electron-withdrawing units for lowering the bandgap (Eg), donor-acceptor (D-A) copolymerization for narrowing Eg and 2-dimensional conjugation for broadened absorption and enhanced hole mobility. It has been demonstrated that LBG semiconducting polymers based on electron-donor units combined with strong electron-withdrawing units possess excellent electronic and optic properties, emerging as excellent candidates for efficient PSCs. While for ultrasensitive photodetectors (PDs), which have intensive applications in both scientific and industrial sectors, sensing from the UV to the NIR region is of critical importance. For polymer PDs, Eg as low as 0.8 eV has been obtained through a rational design stratagem, covering a broad wavelength range from the UV to the NIR region (1450 nm). However, the response time of the polymer PDs are severely limited by the hole mobility of LBG semiconducting polymers, which is significantly lower than those of the inorganic materials. Thus, further advancing the hole mobility of LBG semiconducting polymers is of equal importance as broadening the spectral response for approaching uncooled ultrasensitive broadband polymer PDs in the future study. PMID:26548402

  3. Low bandgap semiconducting polymers for polymeric photovoltaics.

    PubMed

    Liu, Chang; Wang, Kai; Gong, Xiong; Heeger, Alan J

    2016-08-22

    In order to develop high performance polymer solar cells (PSCs), full exploitation of the sun-irradiation from ultraviolet (UV) to near infrared (NIR) is one of the key factors to ensure high photocurrents and thus high efficiency. In this review, five of the effective design rules for approaching LBG semiconducting polymers with high molar absorptivity, suitable energy levels, high charge carrier mobility and high solubility in organic solvents are overviewed. These design stratagems include fused heterocycles for facilitating π-electron flowing along the polymer backbone, groups/atoms bridging adjacent rings for maintaining a high planarity, introduction of electron-withdrawing units for lowering the bandgap (Eg), donor-acceptor (D-A) copolymerization for narrowing Eg and 2-dimensional conjugation for broadened absorption and enhanced hole mobility. It has been demonstrated that LBG semiconducting polymers based on electron-donor units combined with strong electron-withdrawing units possess excellent electronic and optic properties, emerging as excellent candidates for efficient PSCs. While for ultrasensitive photodetectors (PDs), which have intensive applications in both scientific and industrial sectors, sensing from the UV to the NIR region is of critical importance. For polymer PDs, Eg as low as 0.8 eV has been obtained through a rational design stratagem, covering a broad wavelength range from the UV to the NIR region (1450 nm). However, the response time of the polymer PDs are severely limited by the hole mobility of LBG semiconducting polymers, which is significantly lower than those of the inorganic materials. Thus, further advancing the hole mobility of LBG semiconducting polymers is of equal importance as broadening the spectral response for approaching uncooled ultrasensitive broadband polymer PDs in the future study.

  4. Facile fabrication of organic/inorganic nanotube heterojunction arrays for enhanced photoelectrochemical water splitting

    NASA Astrophysics Data System (ADS)

    Chen, Yingzhi; Li, Aoxiang; Yue, Xiaoqi; Wang, Lu-Ning; Huang, Zheng-Hong; Kang, Feiyu; Volinsky, Alex A.

    2016-07-01

    Organic/inorganic heterojunction photoanodes are appealing for making concurrent use of the highly photoactive organic semiconductors, and the efficient dielectric screening provided by their inorganic counterparts. In the present work, organic/inorganic nanotube heterojunction arrays composed of TiO2 nanotube arrays and a semiconducting N,N-(dicyclohexyl) perylene-3,4,9,10-tetracarboxylic diimide (PDi) layer were fabricated for photoelectrochemical water splitting. In this arrayed architecture, a PDi layer with a tunable thickness was coated on anodic TiO2 nanotube arrays by physical vapor deposition, which is advantageous for the formation of a uniform layer and an adequate interface contact between PDi and TiO2. The obtained PDi/TiO2 junction exhibited broadened visible light absorption, and an effective interface for enhanced photogenerated electron-hole separation, which is supported by the reduced charge transfer resistance and prolonged excitation lifetime via impedance spectroscopy analysis and fluorescence emission decay investigations. Consequently, such a heterojunction photoanode was photoresponsive to a wide visible light region of 400-600 nm, and thus demonstrated a highly enhanced photocurrent density at 1.23 V vs. a reversible hydrogen electrode. Additionally, the durability of such a photoanode can be guaranteed after long-time illumination because of the geometrical restraint imposed by the PDi aggregates. These results pave the way to discover new organic/inorganic assemblies for high-performance photoelectric applications and device integration.Organic/inorganic heterojunction photoanodes are appealing for making concurrent use of the highly photoactive organic semiconductors, and the efficient dielectric screening provided by their inorganic counterparts. In the present work, organic/inorganic nanotube heterojunction arrays composed of TiO2 nanotube arrays and a semiconducting N,N-(dicyclohexyl) perylene-3,4,9,10-tetracarboxylic diimide (PDi

  5. Electrical device fabrication from nanotube formations

    DOEpatents

    Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

    2013-03-12

    A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

  6. Magnetic nanotubes

    DOEpatents

    Matsui, Hiroshi; Matsunaga, Tadashi

    2010-11-16

    A magnetic nanotube includes bacterial magnetic nanocrystals contacted onto a nanotube which absorbs the nanocrystals. The nanocrystals are contacted on at least one surface of the nanotube. A method of fabricating a magnetic nanotube includes synthesizing the bacterial magnetic nanocrystals, which have an outer layer of proteins. A nanotube provided is capable of absorbing the nanocrystals and contacting the nanotube with the nanocrystals. The nanotube is preferably a peptide bolaamphiphile. A nanotube solution and a nanocrystal solution including a buffer and a concentration of nanocrystals are mixed. The concentration of nanocrystals is optimized, resulting in a nanocrystal to nanotube ratio for which bacterial magnetic nanocrystals are immobilized on at least one surface of the nanotubes. The ratio controls whether the nanocrystals bind only to the interior or to the exterior surfaces of the nanotubes. Uses include cell manipulation and separation, biological assay, enzyme recovery, and biosensors.

  7. Carbon Nanotubes: Molecular Electronic Components

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Saini, Subhash; Menon, Madhu

    1997-01-01

    The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale molecular electronic networks. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal graphene sheet, more complex joints require other mechanisms. In this work we explore structural characteristics of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme. The study of pi-electron local densities of states (LDOS) of these junctions reveal many interesting features, most prominent among them being the defect-induced states in the gap.

  8. The BN-pair impurity in carbon nanotubes and the possibility for disorder-induced frustration of gap formation

    NASA Astrophysics Data System (ADS)

    Cartoixà, X.; Rurali, R.

    2008-11-01

    We study the BN-pair impurity complex inside a metallic and a semiconducting single-walled carbon nanotube host. For the single impurity in the semiconducting tube, we find that no electron or hole bound states can be sustained because the distance between the B and the N is less than the effective Fermi-Teller radius for that system. If the BN pairs are incorporated at stoichiometric concentrations (BC10N nanotubes), achievable for example with a borabenzene-pyridine adduct C10H10BN precursor, the metallic tube becomes semiconducting for an ordered arrangement of the impurities, but the introduction of disorder restores a finite density of states at the Fermi level. Thus, in the mechanism presented here, disorder effectively restores the symmetry of the nanotube, returning the nanotube to its original metallic character.

  9. Carbon nanotube transistors, sensors, and beyond

    NASA Astrophysics Data System (ADS)

    Zhou, Xinjian

    Carbon nanotubes are tiny hollow cylinders, made from a single graphene sheet, that possess many amazing properties. Another reason why nanotubes have generated intense research activities from scientists of various disciplines is they represent a new class of materials for the study of one-dimensional physics. In this thesis we investigate the electrical transport of semiconducting single-walled carbon nanotubes and their potential applications as biological sensors. Electrons have been predicted, by theoretical physicists, to go through nanotubes without much resistance. But this has not been properly quantified experimentally, and the origin of the routinely observed large resistance in nanotubes is not clear. In this thesis we show that in moderate long high quality nanotubes the electrical transport is limited by electron-phonon scattering. Systematic studies are carried out using many devices of different diameters at various temperatures. The resistance and inverse of peak mobility are observed to decrease linearly with temperature, indicating the influence of phonons. The conductance and peak mobility scales with nanotube diameters also, in a linear fashion and quadratic fashion respectively. Based on electron-phonon scattering, a theory model is developed that can not only predict how the resistance changes with gate voltage but also explain the observed temperature and diameter dependence. This work clarifies the nature of electrical transport in nanotubes and sets a performance limit of nanotube devices in diffusive regime. The electrical transport in nanotubes is extremely sensitive to local electrostatic environment due to their small size, large surface to volume ratio and high mobility, making nanotubes ideal key elements in biological sensors. In the second part of this thesis, we integrate nanotubes with supported lipid bilayers, mimic structures of cell membranes, and use this platform as a way to introduce biomolecules into the vicinity of

  10. Analysis of long-channel nanotube field-effect-transistors (NT FETs)

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Kwak, Dochan (Technical Monitor)

    2001-01-01

    This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

  11. Atomic nanotube welders: boron interstitials triggering connections in double-walled carbon nanotubes.

    PubMed

    Endo, Morinobu; Muramatsu, Hiroyuki; Hayashi, Takuya; Kim, Yoong-Ahm; Van Lier, Gregory; Charlier, Jean-Christophe; Terrones, Humberto; Terrones, Mauricio; Dresselhaus, Mildred S

    2005-06-01

    Here we demonstrate that the incorporation of boron (B) atoms between double-walled carbon nanotubes (DWNTs) during thermal annealing (1400-1600 degrees C) results in covalent nanotube "Y" junctions, DWNT coalescence, and the formation of flattened multiwalled carbon nanotubes (MWNTs). These processes occur via the merging of adjacent tubes, which is triggered by B interstitial atoms. We observe that B atom interstitials between DWNTs are responsible for the rapid establishment of covalent connections between neighboring tubes (polymerization), thereby resulting in the fast annealing of the carbon cylinders with B atoms embedded in the newly created carbon nanotube network. Once B is in the lattice, tube faceting (polygonization) starts to occur, and the electronic properties are expected to change dramatically. Therefore, B atoms indeed act as atomic nanotube fusers (or welders), and this process could now be used in assembling novel electronic nanotube devices, nanotube networks, carbon nanofoams and heterojunctions exhibiting p-type electronic properties.

  12. Electronic structure control of single-walled carbon nanotube functionalization.

    PubMed

    Strano, Michael S; Dyke, Christopher A; Usrey, Monica L; Barone, Paul W; Allen, Mathew J; Shan, Hongwei; Kittrell, Carter; Hauge, Robert H; Tour, James M; Smalley, Richard E

    2003-09-12

    Diazonium reagents functionalize single-walled carbon nanotubes suspended in aqueous solution with high selectivity and enable manipulation according to electronic structure. For example, metallic species are shown to react to the near exclusion of semiconducting nanotubes under controlled conditions. Selectivity is dictated by the availability of electrons near the Fermi level to stabilize a charge-transfer transition state preceding bond formation. The chemistry can be reversed by using a thermal treatment that restores the pristine electronic structure of the nanotube. PMID:12970561

  13. Enhancing conductivity of metallic carbon nanotube networks by transition metal adsorption

    SciTech Connect

    Ketolainen, T. Havu, V.; Puska, M. J.

    2015-02-07

    The conductivity of carbon nanotube thin films is mainly determined by carbon nanotube junctions, the resistance of which can be reduced by several different methods. We investigate electronic transport through carbon nanotube junctions in a four-terminal configuration, where two metallic single-wall carbon nanotubes are linked by a group 6 transition metal atom. The transport calculations are based on the Green’s function method combined with the density-functional theory. The transition metal atom is found to enhance the transport through the junction near the Fermi level. However, the size of the nanotube affects the improvement in the conductivity. The enhancement is related to the hybridization of chromium and carbon atom orbitals, which is clearly reflected in the character of eigenstates near the Fermi level. The effects of chromium atoms and precursor molecules remaining adsorbed on the nanotubes outside the junctions are also examined.

  14. Compressed carbon nanotubes: a family of new multifunctional carbon allotropes.

    PubMed

    Hu, Meng; Zhao, Zhisheng; Tian, Fei; Oganov, Artem R; Wang, Qianqian; Xiong, Mei; Fan, Changzeng; Wen, Bin; He, Julong; Yu, Dongli; Wang, Hui-Tian; Xu, Bo; Tian, Yongjun

    2013-01-01

    The exploration of novel functional carbon polymorphs is an enduring topic of scientific investigations. In this paper, we present simulations demonstrating metastable carbon phases as the result of pressure induced carbon nanotube polymerization. The configuration, bonding, electronic, and mechanical characteristics of carbon polymers strongly depend on the imposed hydrostatic/non-hydrostatic pressure, as well as on the geometry of the raw carbon nanotubes including diameter, chirality, stacking manner, and wall number. Especially, transition processes under hydrostatic/non-hydrostatic pressure are investigated, revealing unexpectedly low transition barriers and demonstrating sp(2)→sp(3) bonding changes as well as peculiar oscillations of electronic property (e.g., semiconducting→metallic→semiconducting transitions). These polymerized nanotubes show versatile and superior physical properties, such as superhardness, high tensile strength and ductility, and tunable electronic properties (semiconducting or metallic).

  15. Silicon Carbide Nanotube Synthesized

    NASA Technical Reports Server (NTRS)

    Lienhard, Michael A.; Larkin, David J.

    2003-01-01

    Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

  16. Electrical properties and applications of carbon nanotube structures.

    PubMed

    Bandaru, Prabhakar R

    2007-01-01

    The experimentally verified electrical properties of carbon nanotube structures and manifestations in related phenomena such as thermoelectricity, superconductivity, electroluminescence, and photoconductivity are reviewed. The possibility of using naturally formed complex nanotube morphologies, such as Y-junctions, for new device architectures are then considered. Technological applications of the electrical properties of nanotube derived structures in transistor applications, high frequency nanoelectronics, field emission, and biological sensing are then outlined. The review concludes with an outlook on the technological potential of nanotubes and the need for new device architectures for nanotube systems integration. PMID:17450889

  17. Resonant ablation of single-wall carbon nanotubes by femtosecond laser pulses

    NASA Astrophysics Data System (ADS)

    Arutyunyan, N. R.; Komlenok, M. S.; Kononenko, V. V.; Pashinin, V. P.; Pozharov, A. S.; Konov, V. I.; Obraztsova, E. D.

    2015-01-01

    The thin 50 nm film of bundled arc-discharge single-wall carbon nanotubes was irradiated by femtosecond laser pulses with wavelengths 675, 1350 and 1745 nm corresponding to the absorption band of metallic nanotubes E11M, to the background absorption and to the absorption band of semiconducting nanotubes E11S, respectively. The aim was to induce a selective removal of nanotubes of specific type from the bundled material. Similar to conducted thermal heating experiments, the effect of laser irradiation results in suppression of all radial breathing modes in the Raman spectra, with preferential destruction of the metallic nanotubes with diameters less than 1.26 nm and of the semiconducting nanotubes with diameters 1.36 nm. However, the etching rate of different nanotubes depends on the wavelength of the laser irradiation. It is demonstrated that the relative content of nanotubes of different chiralities can be tuned by a resonant laser ablation of undesired nanotube fraction. The preferential etching of the resonant nanotubes has been shown for laser wavelengths 675 nm (E11M) and 1745 nm (E11S).

  18. Atomic and electronic structures of carbon nanotube covalent connecting with graphene by oxygen molecular

    NASA Astrophysics Data System (ADS)

    Wei, Jianwei; Wei, Qiang; Ma, Zengwei; Zeng, Hui

    2016-02-01

    Based on density functional theories, we have investigated the nanostructure in which boron and nitrogen co-doped carbon nanotube (CNT)/graphene (GR) were connected by an oxygen molecular. The geometry structure and electronic properties of the system were calculated carefully. The band structures indicate that the impurity state of oxygen transfer the semiconducting co-doped carbon nanotube/graphene into a semimetallic composite material. The results show that the connection can be achieved with energy release under a wider range of distance between the nanotube and graphene. It indicates that the connection between the nanotube and the graphene might be a self-assemble process.

  19. Effects of nitrogen substitutional doping on the electronic transport of carbon nanotube

    NASA Astrophysics Data System (ADS)

    Wei, Jianwei; Hu, Huifang; Zeng, Hui; Zhou, Zhipeng; Yang, Weiwei; Peng, Ping

    2008-01-01

    We have studied the effects of nitrogen substitutional doping on the transport properties of single-wall carbon nanotube (8, 0) using density functional theory and non-equilibrium Green's functions. The results reveal that the nanotube changes from the semiconducting to the quasi-metallic state because of the dopants, and their structures strongly dominate their electrical properties. Our calculations indicate that transport properties of the doped nanotubes are sensitive not only to the concentration of nitrogen atoms but also to their distribution. The doping effects on the electronic transport of the carbon nanotube are discussed.

  20. Separation of empty and water-filled single-wall carbon nanotubes.

    PubMed

    Fagan, Jeffrey A; Huh, Ji Yeon; Simpson, Jeffrey R; Blackburn, Jeffrey L; Holt, Josh M; Larsen, Brian A; Walker, Angela R Hight

    2011-05-24

    The separation of empty and water-filled laser ablation and electric arc synthesized nanotubes is reported. Centrifugation of these large-diameter nanotubes dispersed with sodium deoxycholate using specific conditions produces isolated bands of empty and water-filled nanotubes without significant diameter selection. This separation is shown to be consistent across multiple nanotube populations dispersed from different source soots. Detailed spectroscopic characterization of the resulting empty and filled fractions reveals that water filling leads to systematic changes to the optical and vibrational properties. Furthermore, sequential separation of the resolved fractions using cosurfactants and density gradient ultracentrifugation reveals that water filling strongly influences the optimal conditions for metallic and semiconducting separation.

  1. Semiconducting Polymer Nanoparticles as Photoacoustic Molecular Imaging Probes in Living Mice

    PubMed Central

    Pu, Kanyi; Shuhendler, Adam J.; Jokerst, Jesse V.; Mei, Jianguo; Gambhir, Sanjiv S.; Bao, Zhenan; Rao, Jianghong

    2014-01-01

    Photoacoustic (PA) imaging holds great promise for the visualization of physiology and pathology at the molecular level with deep tissue penetration and fine spatial resolution. To fully utilize this potential, PA molecular imaging probes have to be developed. Herein we introduce near infrared (NIR) light absorbing semiconducting polymer nanoparticles (SPNs) as a new class of contrast agents for PA molecular imaging. SPNs can produce stronger signal than commonly used single-wall carbon nanotubes and gold nanorods on a per mass basis, permitting whole-body lymph node PA mapping in living mice at a low systematic injection mass. Furthermore, SPNs possess high structural flexibility, narrow PA spectral profiles, and strong resistance to photodegradation and oxidation, which enables development of the first NIR ratiometric PA probe for in vivo real-time imaging of reactive oxygen species—vital chemical mediators of many diseases. These results demonstrate SPNs an ideal nanoplatform for developing PA molecular probes. PMID:24463363

  2. Strongly Anisotropic Ballistic Magnetoresistance in Compact Three-Dimensional Semiconducting Nanoarchitectures

    NASA Astrophysics Data System (ADS)

    Chang, Ching-Hao; van den Brink, Jeroen; Ortix, Carmine

    2014-11-01

    We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which leads to a tunability of the number of quasi-one-dimensional magnetic subbands crossing the Fermi energy. The experimental significance of this phenomenon is illustrated by a sizable anisotropy that scales with the inverse of the winding number, and persists up to a critical temperature that can be strongly enhanced by increasing the strength of the external magnetic field or the characteristic radius of curvature, and can reach room temperature.

  3. Coupling of carbon and peptide nanotubes.

    PubMed

    Montenegro, Javier; Vázquez-Vázquez, Carlos; Kalinin, Arseny; Geckeler, Kurt E; Granja, Juan R

    2014-02-12

    Two of the main types of nanotubular architectures are the single-walled carbon nanotubes (SWCNTs) and the self-assembling cyclic peptide nanotubes (SCPNs). We here report the preparation of the dual composite resulting from the ordered combination of both tubular motifs. In the resulting architecture, the SWCNTs can act as templates for the assembly of SCPNs that engage the carbon nanotubes noncovalently via pyrene "paddles", each member of the resulting hybrid stabilizing the other in aqueous solution. The particular hybrids obtained in the present study formed highly ordered oriented arrays and display complementary properties such as electrical conductivity. Furthermore, a self-sorting of the cyclic peptides toward semiconducting rather than metallic SWCNTs is also observed in the aqueous dispersions. It is envisaged that a broad range of exploitable properties may be achieved and/or controlled by varying the cyclic peptide components of similar SWCNT/SCPN hybrids.

  4. Bulk semiconducting scintillator device for radiation detection

    DOEpatents

    Stowe, Ashley C.; Burger, Arnold; Groza, Michael

    2016-08-30

    A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

  5. Response functions of semiconducting lithium indium diselenide

    NASA Astrophysics Data System (ADS)

    Lukosi, Eric; Chvala, Ondrej; Stowe, Ashley

    2016-06-01

    This paper presents the results of a computational investigation that determined the gamma-ray and neutron response functions of a new semiconducting material, 6LiInSe2, which is very sensitive to thermal neutrons. Both MCNP6 simulations and custom post-processing/simulation techniques were used to determine various detection properties of LISe. The computational study included consideration of energetic electron escape, the contribution from the activation of 115In and subsequent decay of 116In, triton and alpha particle escape from the 6Li reaction pathway, and the effect of incomplete charge collection when detecting neutrons via the 6Li reaction pathway. The result of neutron detection with incomplete charge collection was compared to experimental results and showed general agreement, where holes exhibit a lower mobility-lifetime product than electrons, as expected for compound semiconductors.

  6. Optical antenna effect in semiconducting nanowires.

    PubMed

    Chen, G; Wu, Jian; Lu, Qiujie; Gutierrez, H R; Xiong, Qihua; Pellen, M E; Petko, J S; Werner, D H; Eklund, P C

    2008-05-01

    We report on investigations of the interaction of light with nanoscale antennae made from crystalline GaP nanowires (NWs). Using Raman scattering, we have observed strong optical antenna effects which we identify with internal standing wave photon modes of the wire. The antenna effects were probed in individual NWs whose diameters are in the range 40 < d < 300 nm. The data and our calculations show that the nature of the backscattered light is critically dependent on the interplay between a photon confinement effect and bulk Raman scattering. At small diameter, d < 65 nm, the NWs are found to act like a nearly perfect dipole antenna and the bulk Raman selection rules are masked leading to a polarized scattering intensity function I R approximately cos4 theta. Underscoring the importance of this work is the realization that a fundamental understanding of the "optical antenna effect" in semiconducting NWs is essential to the analysis of all electro-optic effects in small diameter filaments.

  7. Doping Scheme of Semiconducting Atomic Chains

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Saini, Subhash (Technical Monitor)

    1998-01-01

    Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

  8. Pure carbon nanoscale devices: Nanotube heterojunctions

    SciTech Connect

    Chico, L.; Crespi, V.H.; Benedict, L.X.; Louie, S.G.; Cohen, M.L. |

    1996-02-01

    Introduction of pentagon-heptagon pair defects into the hexagonal network of a single carbon nanotube can change the helicity of the tube and alter its electronic structure. Using a tight-binding method to calculate the electronic structure of such systems we show that they behave as nanoscale metal/semiconductor or semiconductor/semiconductor junctions. These junctions could be the building blocks of nanoscale electronic devices made entirely of carbon. {copyright} {ital 1996 The American Physical Society.}

  9. Modulating the phase transition between metallic and semiconducting single-layer MoS2 and WS2 through size effects.

    PubMed

    Hu, Ziyu; Zhang, Shengli; Zhang, Yan-Ning; Wang, Da; Zeng, Haibo; Liu, Li-Min

    2015-01-14

    The first-principles calculations are performed to investigate the electronic properties and the atomic mechanism of the single layer MoS2 or WS2 homo-junction structure. The results reveal that both the stability and electronic structure of the homo-junction structure are greatly affected by the type of boundaries, which connect the different phase structures, either the semiconducting hexagonal (H) structure or the metallic trigonal (T) structure. Through tuning the size of the lateral homo-junction structure of either MoS2 or WS2, the phase transformation between H and T can occur. Interestingly, the electronic structures of homo-junction structures can be tuned between the metal and the semiconductor by changing the size of the nanoribbons.

  10. Carbon Nanotube Superconducting Quantum Interference Device.

    NASA Astrophysics Data System (ADS)

    Bouchiat, Vincent; Cleuziou, Jean-Pierre; Ondarcuhu, Thierry; Monthioux, Marc; Wernsdorfer, Wolfgang

    2007-03-01

    We report on the study of a superconducting quantum interference device (SQUID) with Josephson junctions made of portions of metallic single-walled carbon nanotube [1]. Quantum confinement in each nanotube junction induces a discrete quantum dot (QD) energy level structure, which can be controlled with a lateral electrostatic gate. In addition, a backgate electrode can vary the transparency of the QD barriers, thus permitting to change the hybridization of the QD states with the superconducting contacts [2]. The gates are also used to directly tune the quantum phase interference of the Cooper pairs circulating in the SQUID ring. Optimal modulation of a 6nA supercurrent current with magnetic flux is achieved when both QD junctions are in the ``on'' or ``off'' state. Futhermore, the SQUID design establishes that these CNT Josephson junctions can be used as gate-controlled π-junctions. This allow to verify that the sign of the current-phase relation across a proximity coupled Qdot can be reversed with a gate voltage. Noise studies shows that the noise figure of the nanotube SQUID together with the size of the junction should allow the detection of a single molecule magnet. [1] J-P. Cleuziou et al. Nature Nanotec., 1, 53, (2006). [2] J-P. Cleuziou et al. cond-mat/0610622.

  11. Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

    PubMed

    Jariwala, Deep; Sangwan, Vinod K; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L; Geier, Michael L; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

    2013-11-01

    The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

  12. Brightening of the lowest exciton in carbon nanotubes via chemical functionalization.

    PubMed

    Kilina, Svetlana; Ramirez, Jessica; Tretiak, Sergei

    2012-05-01

    Using time-dependent density functional theory, we found that chemical functionalization at low concentrations of single-walled carbon nanotubes (SWNTs) locally alters the π-conjugated network of the nanotube surface and leads to a spatial confinement of the electronically excited wave functions. Depending on the adsorbant positions, the chemisorption significantly modifies the optical selection rules. Our modeling suggests that photoluminescent efficiency of semiconducting SWNT materials can be controlled by selective chemical functionalization. PMID:22494501

  13. Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

    SciTech Connect

    Robertson, J.; Zhong, G.; Telg, H.; Thomsen, C.; Warner, J. H.; Briggs, G. A. D.; Dettlaff-Weglikowska, U.; Roth, S.

    2008-10-20

    We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe-Al{sub 2}O{sub 3} thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 1/3 of metallic tubes.

  14. Writing simple RF electronic devices on paper with carbon nanotube ink

    NASA Astrophysics Data System (ADS)

    Dragoman, M.; Flahaut, E.; Dragoman, D.; Ahmad, M. Al; Plana, R.

    2009-09-01

    This paper shows that we can print on paper simple high-frequency electronic devices such as resistances, capacitances or inductances, with values that can be changed in a controllable manner by an applied dc voltage. This tunability is achieved with the help of an ink containing functionalized carbon nanotubes and water. After the water is evaporated from the paper, the nanotubes remain steadily imprinted on paper, showing a semiconducting behavior and tunable electrical properties.

  15. Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    NASA Technical Reports Server (NTRS)

    Wang, Zhong L. (Inventor); Wang, Xudong (Inventor); Song, Jinhui (Inventor); Zhou, Jun (Inventor); He, Jr-Hau (Inventor)

    2011-01-01

    A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode.

  16. Semiconducting wafer form shaping with an electric discharge machine

    NASA Astrophysics Data System (ADS)

    Yang, Yu-Tung

    1988-09-01

    Gallium can be used as a temporary glue for semiconducting wafer mounting. The good electric contact between the electrode, the gallium layer, and the semiconducting wafer makes the spark cutting and the semiconducting wafer form shaping much easier. After wafer spark cutting, the residual gallium can be easily removed by a cotton swab from the surface of the wafer in warm isopropyl alcohol (IPA). Also, in this report, improved circuitry of the electric discharge machine for easy and economical construction is described. Gallium arsenide wafers have been form shaped by the present method.

  17. Thermionic refrigeration at CNT-CNT junctions

    NASA Astrophysics Data System (ADS)

    Li, C.; Pipe, K. P.

    2016-10-01

    Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

  18. Josephson radiation from InSb-nanowire junction

    NASA Astrophysics Data System (ADS)

    van Woerkom, David; Proutski, Alexander; Krivachy, Tamas; Bouman, Daniel; van Gulik, Ruben; Gul, Onder; Cassidy, Maja; Car, Diana; Bakkers, Erik; Kouwenhoven, Leo; Geresdi, Attila

    Semiconducting nanowire Josephson junctions has recently gained interest as building blocks for Majorana circuits and gate-tuneable superconducting qubits . Here we investigate the rich physics of the Andreev bound state spectrum of InSb nanowire junctions utilizing the AC Josephson relation 2eV_bias =hf . We designed and characterized an on-chip microwave circuit coupling the nanowire junction to an Al/AlOx/Al tunnel junction. The DC response of the tunnel junction is affected by photon-assisted quasiparticle current, which gives us the possibility to measure the radiation spectrum of the nanowire junction up to several tens of GHz in frequency. Our circuit design allows for voltage or phase biasing of the Josephson junction enabling direct mapping of Andreev bound states. We discuss our fabrication methods and choice of materials to achieve radiation detection up to a magnetic field of few hundred milliTesla, compatible with Majorana states in spin-orbit coupled nanowires. This work has been supported by the Netherlands Foundations FOM, Abstract NWO and Microsoft Corporation Station Q.

  19. Boron and nitrogen-doped single-walled carbon nanotube

    NASA Astrophysics Data System (ADS)

    Moradian, Rostam; Azadi, Sam

    2006-10-01

    Boron nitride semiconducting zigzag single-walled carbon nanotube (SWCNT), BcbNcnC, as a potential candidate for making nanoelectronic devices is investigated by first-principle full potential density functional theory (DFT). In contrast to the previous DFT calculations, where just one boron and nitrogen doping configuration is considered, here for the average over all possible configurations density of states is calculated in terms of boron and nitrogen concentrations. For example in many body techniques (MBTs) [R. Moradian, Phys. Rev. B 89 (2004) 205425] it is found that semiconducting average gap, Eg, could be controlled by doping nitrogen and boron. But in contrast to MBTs where gap edge in the average density of states is sharp, the gap edge is smeared and impurity states appear in the SWCNT semiconducting gap.

  20. Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons, and metal-semiconductor Zn/ZnO nanospheres.

    PubMed

    Lin, Jin-Han; Patil, Ranjit A; Devan, Rupesh S; Liu, Zhe-An; Wang, Yi-Ping; Ho, Ching-Hwa; Liou, Yung; Ma, Yuan-Ron

    2014-11-10

    We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO nanospheres are presented. The PL emissions of the metallic Zn solid nanospheres are mainly dependent on the electron transitions between the Fermi level (E(F)) and the 3d band, while those of the semiconducting hollow ZnO nanoballoons are ascribed to the near band edge (NBE) and deep level electron transitions. The PL emissions of the metal-semiconductor concentric solid Zn/ZnO nanospheres are attributed to the electron transitions across the metal-semiconductor junction, from the E(F) to the valence and 3d bands, and from the interface states to the valence band. All three nanostructures are excellent room-temperature light emitters.

  1. Semiconducting Metal Oxide Based Sensors for Selective Gas Pollutant Detection

    PubMed Central

    Kanan, Sofian M.; El-Kadri, Oussama M.; Abu-Yousef, Imad A.; Kanan, Marsha C.

    2009-01-01

    A review of some papers published in the last fifty years that focus on the semiconducting metal oxide (SMO) based sensors for the selective and sensitive detection of various environmental pollutants is presented. PMID:22408500

  2. Electronic interaction in composites of a conjugated polymer and carbon nanotubes: first-principles calculation and photophysical approaches

    PubMed Central

    Wéry, Jany; Duvail, Jean-Luc; Lefrant, Serge; Yaya, Abu; Ewels, Chris

    2015-01-01

    Summary The mechanisms that control the photophysics of composite films made of a semiconducting conjugated polymer (poly(paraphenylene vinylene), PPV) mixed with single-walled carbon nanotubes (SWNT) up to a concentration of 64 wt % are determined by using photoexcitation techniques and density functional theory. Charge separation is confirmed experimentally by rapid quenching of PPV photoluminescence and changes in photocurrent starting at relatively low concentrations of SWNT. Calculations predict strong electronic interaction between the polymer and the SWNT network when nanotubes are semiconducting. PMID:26171290

  3. Fabrication of hetero-junction diode using NiO thin film on ITO/glass substrate

    NASA Astrophysics Data System (ADS)

    Soni, Sonali; Sharma, Vinay; Kuanr, Bijoy K.

    2016-05-01

    Fabrication, characterization and testing of hetero-junctions of NiO thin films were done. Nickel films were evaporated on polished ITO coated glass substrates using thermal deposition. The films were annealed at high temperatures in the presence of oxygen to obtain NiO films. The rectifying current-voltage (I-V) properties confirmed that a hetero-junction diode was successfully formed. The AC and DC behavior of hetero-junction using DC silver-probes were determined. The threshold voltage, ideality factor and reverse saturation current of hetero junction were determined. We have compared these I-V characteristics with semiconducting PN junction diode. To test the device characteristics, we used the structure as a diode clipper at various frequencies. It is showed that our device is a better high-frequency junction-device than a normal PN junction diode.

  4. The influence of contact transparency on the superconducting proximity effect in thin semiconducting films

    NASA Astrophysics Data System (ADS)

    Vissers, Michael Robert

    The superconducting proximity effect allows for the introduction of pair correlations into otherwise normal metals provided that they are coupled through a sufficiently transparent junction. The influence of this proximity effect manifests itself by modifying both the normal layer sheet resistance in the proximity affected region, Rs, and the junction conductance across the N-S boundary, Gc. These two quantities are impossible to measure simultaneously with any single two terminal device even if it is a four point measurement. However, a new three terminal device structure allows us to make two independent four point voltage measurements, which permits the extraction of these two intrinsic aspects of the proximity effect when combined with simple Ohm's law modeling. Devices with completely in-situ junctions between niobium and heavily doped n-GaAs and n-InAs were fabricated via molecular beam epitaxy. In order to reduce the Schottky barrier, a graded and delta-doped InGaAs cap was inserted at the interface. Careful construction of the doping profile in the cap allows for extremely transparent junctions just prior to the onset of superconductivity, the most transparent Nb-GaAs junctions yet reported. The transparency of the junction can be evaluated by calculating the number of available quantum channels between the two different Fermi surfaces and using the Landauer formalism to determine the ideal junction conductance. Comparison to the experimental junction conductance permits the discovery of the fundamental transmission coefficient for transport across the N-S interface. If the semiconducting depth is small enough the presence of correlations in the semiconductor are observed. Samples with deeper depths exhibit no direct evidence of superconductivity inside the semiconductor. Samples consisting of doped InAs were also fabricated and measured. These samples exhibit almost perfect contact between the superconductor and the semiconductor and pair correlations are

  5. Influence of Polymer Electronics on Selective Dispersion of Single-Walled Carbon Nanotubes.

    PubMed

    Fong, Darryl; Bodnaryk, William J; Rice, Nicole A; Saem, Sokunthearath; Moran-Mirabal, Jose M; Adronov, Alex

    2016-10-01

    The separation and isolation of semiconducting and metallic single-walled carbon nanotubes (SWNTs) on a large scale remains a barrier to many commercial applications. Selective extraction of semiconducting SWNTs by wrapping and dispersion with conjugated polymers has been demonstrated to be effective, but the structural parameters of conjugated polymers that dictate selectivity are poorly understood. Here, we report nanotube dispersions with a poly(fluorene-co-pyridine) copolymer and its cationic methylated derivative, and show that electron-deficient conjugated π-systems bias the dispersion selectivity toward metallic SWNTs. Differentiation of semiconducting and metallic SWNT populations was carried out by a combination of UV/Vis-NIR absorption spectroscopy, Raman spectroscopy, fluorescence spectroscopy, and electrical conductivity measurements. These results provide new insight into the rational design of conjugated polymers for the selective dispersion of metallic SWNTs.

  6. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.

  7. Junction-based field emission structure for field emission display

    DOEpatents

    Dinh, Long N.; Balooch, Mehdi; McLean, II, William; Schildbach, Marcus A.

    2002-01-01

    A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

  8. Transport properties and electronic structure of epitaxial tunnel junctions

    NASA Astrophysics Data System (ADS)

    Freyss, M.; Papanikolaou, N.; Bellini, V.; Zeller, R.; Dederichs, P. H.; Turek, I.

    2002-02-01

    We present ab initio calculations for the electronic ground-state and transport properties of epitaxial Fe/semiconductor/Fe (0 0 1) tunnel junctions. The ground state properties are determined by the ab initio Screened KKR Green's function method and the transport properties by a Green's function formulation of the Landauer-Büttiker formalism. We focus on tunnel junctions with a semiconducting ZnSe barrier and compare them to results for junctions with Si and GaAs barriers. We comment on the presence of metal-induced gap states (MIGS) in the semiconductor, the spin polarization of which strongly depends on the nature of the barrier. We investigate furthermore the influence of one atomic layer at the interface of a non-magnetic metal (Cu, Ag, Al) and of a magnetic 3d transition metal.

  9. Alloyed 2D Metal-Semiconductor Atomic Layer Junctions.

    PubMed

    Kim, Ah Ra; Kim, Yonghun; Nam, Jaewook; Chung, Hee-Suk; Kim, Dong Jae; Kwon, Jung-Dae; Park, Sang Won; Park, Jucheol; Choi, Sun Young; Lee, Byoung Hun; Park, Ji Hyeon; Lee, Kyu Hwan; Kim, Dong-Ho; Choi, Sung Mook; Ajayan, Pulickel M; Hahm, Myung Gwan; Cho, Byungjin

    2016-03-01

    Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices. PMID:26839956

  10. Novel metastable metallic and semiconducting germaniums

    PubMed Central

    Selli, Daniele; Baburin, Igor A.; Martoňák, Roman; Leoni, Stefano

    2013-01-01

    Group-IVa elements silicon and germanium are known for their semiconducting properties at room temperature, which are technologically critical. Metallicity and superconductivity are found at higher pressures only, Ge β-tin (tI4) being the first high-pressure metallic phase in the phase diagram. However, recent experiments suggest that metallicity in germanium is compatible with room conditions, calling for a rethinking of our understanding of its phase diagram. Missing structures can efficiently be identified based on structure prediction methods. By means of ab initio metadynamics runs we explored the lower-pressure region of the phase diagram of germanium. A monoclinic germanium phase (mC16) with four-membered rings, less dense than diamond and compressible into β-tin phase (tI4) was found. Tetragonal bct-5 appeared between diamond and tI4. mC16 is a narrow-gap semiconductor, while bct-5 is metallic and potentially still superconducting in the very low pressure range. This finding may help resolving outstanding experimental issues. PMID:23492980

  11. Innate cation sensitivity in a semiconducting polymer.

    PubMed

    Althagafi, Talal M; Algarni, Saud A; Grell, Martin

    2016-09-01

    Water-gated organic thin film transistors (OTFTs) using the hole transporting semiconducting polymer, poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT), show an innate response of their threshold voltage to the addition of divalent metal cations to the gating water, without deliberately introducing an ion-sensitive component. A similar threshold response is shown for several divalent cations, but is absent for monovalent cations. Response is absent for transistors using the inorganic semiconductor ZnO, or the similar organic semiconductor poly(3-hexylthiophene) (rrP3HT), instead of PBTTT. We assign innate cation sensitivity to residues of the organometallic Pd(0) complex used as catalyst in PBTTT synthesis which bears strong resemblance to typical metal chelating agents. Organometallic Pd(0) residues are absent from ZnO, and also from rrP3HT which is polymerised with a different type of catalyst. However, when Pd(0) complex is deliberately added to rrP3HT casting solutions, resulting OTFTs also display threshold response to a divalent cation. PMID:27343580

  12. Nanotubes, Nanowires, and Nanocantilevers in Biosensor Development

    SciTech Connect

    Wang, Jun; Liu, Guodong; Lin, Yuehe

    2007-03-08

    In this chapter, the reviews on biosensor development based on 1-D nanomaterials, CNTs, semiconducting nanowires, and some cantilevers will be introduced. The emphasis of this review will be placed on CNTs and electrochemical/electronic biosensor developments. Section 2 of this chapter gives a detailed description of carbon nanotubes-based biosensor development, from fabrication of carbon nanotubes, the strategies for construction of carbon nanotube based biosensors to their bioapplications. In the section of the applications of CNTs based biosensors, various detection principles, e. g. electrochemical, electronic, and optical method, and their applications are reviewed in detail. Section 3 introduces the method for synthesis of semiconducting nanowires, e.g. silicon nanowires, conducting polymer nanowires and metal oxide nanowires and their applications in DNA and proteins sensing. Section 4 simply describes the development for nanocantilevers based biosensors and their application in DNA and protein diagnosis. Each section starts from a brief introduction and then goes into details. Finally in the Conclusion section, the development of 1-D nanomaterials based biosensor development is summarized.

  13. A Study on Novel Methods to Improve Conductivity of Carbon Nanotube Films

    NASA Astrophysics Data System (ADS)

    Xie, Yao

    Carbon nanotubes have gained considerable attention in recent years, and have found applications in a variety of fields such as nanotechnology, electronics and optics thanks to their exceptional electrical, optical and mechanical properties. Individual nanotubes have demonstrated extraordinary electron carrying and conducting ability, however, when constructed into networks, the device until this day still fall short of the expectation when being compared with conditional conducting materials. Reasons for this limitation generally include the intrinsic (junctions) and the extrinsic (impurities) ones. Both factors introduce resistance to the electron transport within single walled carbon nanotubes (SWNT) film. In this thesis, three novel methods were adopted in order to tackle those two problems from a different perspective. Glycolic acid treatment is used to replace traditional strong inorganic acid to target specifically the surfactants trapped inside the network while preserving the structure of SWNT. Glycolic acid was used for both transferred and sprayed processes. In both cases, certain levels of improvement were observed in terms of conducting performance. The decrease in resistance was as high as 11% for sprayed films, and 18% for transferred films. Inconsistency from sample to sample did occur, especially for samples prepared by the membrane transfer technique. Diffusion activities were examined for metal particles deposited on SWNT networks, establishing the foundation for using metal particles as a medium to improve interjunction electron conduction for SWNT networks. In order to accurately evaluate the degree of diffusion, a novel masking method was developed using NaCl crystallites. The diffusion coefficient and activation energy for Gold particles on the surface of SWNTs films were measured. The behavior can be described as a combination of diffusion of metal particles driven by concentration gradient and metal particles aggregation to reduce surface

  14. Joint measurement of current-phase relations and transport properties of hybrid junctions using a three junctions superconducting quantum interference device

    SciTech Connect

    Basset, J.; Delagrange, R.; Weil, R.; Kasumov, A.; Bouchiat, H.; Deblock, R.

    2014-07-14

    We propose a scheme to measure both the current-phase relation and differential conductance dI/dV of a superconducting junction, in the normal and the superconducting states. This is done using a dc Superconducting Quantum Interference Device with two Josephson junctions in parallel with the device under investigation and three contacts. As a demonstration, we measure the current-phase relation and dI/dV of a small Josephson junction and a carbon nanotube junction. In this latter case, in a regime where the nanotube is well conducting, we show that the non-sinusoidal current phase relation we find is consistent with the theory for a weak link, using the transmission extracted from the differential conductance in the normal state. This method holds great promise for future investigations of the current-phase relation of more exotic junctions.

  15. Computational Nanotechnology of Materials, Devices, and Machines: Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Kwak, Dolhan (Technical Monitor)

    2000-01-01

    The mechanics and chemistry of carbon nanotubes have relevance for their numerous electronic applications. Mechanical deformations such as bending and twisting affect the nanotube's conductive properties, and at the same time they possess high strength and elasticity. Two principal techniques were utilized including the analysis of large scale classical molecular dynamics on a shared memory architecture machine and a quantum molecular dynamics methodology. In carbon based electronics, nanotubes are used as molecular wires with topological defects which are mediated through various means. Nanotubes can be connected to form junctions.

  16. Binding affinities and thermodynamics of noncovalent functionalization of carbon nanotubes with surfactants.

    PubMed

    Oh, Hyunkyu; Sim, Jinsook; Ju, Sang-Yong

    2013-09-01

    Binding affinity and thermodynamic understanding between a surfactant and carbon nanotube is essential to develop various carbon nanotube applications. Flavin mononucleotide-wrapped carbon nanotubes showing a large redshift in optical signature were utilized to determine the binding affinity and related thermodynamic parameters of 12 different nanotube chiralities upon exchange with other surfactants. Determined from the midpoint of sigmoidal transition, the equilibrium constant (K), which is inversely proportional to the binding affinity of the initial surfactant-carbon nanotube, provided quantitative binding strengths of surfactants as SDBS > SC ≈ FMN > SDS, irrespective of electronic types of SWNTs. Binding affinity of metallic tubes is weaker than that of semiconducting tubes. The complex K patterns from semiconducting tubes show preference to certain SWNT chiralities and surfactant-specific cooperativity according to nanotube chirality. Controlling temperature was effective to modulate K values by 30% and enables us to probe thermodynamic parameters. Equally signed enthalpy and entropy changes produce Gibbs energy changes with a magnitude of a few kJ/mol. A greater negative Gibbs energy upon exchange of surfactant produces an enhanced nanotube photoluminescence, implying the importance of understanding thermodynamics for designing nanotube separation and supramolecular assembly of surfactant.

  17. Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics.

    PubMed

    Cao, Qing; Han, Shu-jen; Tulevski, George S; Zhu, Yu; Lu, Darsen D; Haensch, Wilfried

    2013-03-01

    Single-walled carbon nanotubes have exceptional electronic properties and have been proposed as a replacement for silicon in applications such as low-cost thin-film transistors and high-performance logic devices. However, practical devices will require dense, aligned arrays of electronically pure nanotubes to optimize performance, maximize device packing density and provide sufficient drive current (or power output) for each transistor. Here, we show that aligned arrays of semiconducting carbon nanotubes can be assembled using the Langmuir-Schaefer method. The arrays have a semiconducting nanotube purity of 99% and can fully cover a surface with a nanotube density of more than 500 tubes/µm. The nanotube pitch is self-limited by the diameter of the nanotube plus the van der Waals separation, and the intrinsic mobility of the nanotubes is preserved after array assembly. Transistors fabricated using this approach exhibit significant device performance characteristics with a drive current density of more than 120 µA µm(-1), transconductance greater than 40 µS µm(-1) and on/off ratios of ∼1 × 10(3).

  18. Prediction of the electronic structure of single-walled black phosphorus nanotubes.

    PubMed

    Guan, Lixiu; Chen, Guifeng; Tao, Junguang

    2016-06-01

    Due to its high carrier mobility and tunable bandgap, phosphorene has been the subject of immense interest recently. Herein, we show using density functional theory based calculations that black phosphorus (BP) nanotubes are achievable. Moreover, the electronic properties of BP nanotubes are explored. In contrast to their monolayer and bulk counterparts, most BP nanotubes possess indirect band gaps. In addition, strong anisotropic electronic behaviors are observed between zigzag and armchair nanotubes. Semiconducting to semi-metallic transition occurs only for zigzag tubes when its diameter shrinks to ∼1.5 nm. This difference is strongly related to the bond bending after the formation of the nanotubes which governs the s-p hybridization, as well as electron distribution in different p orbitals and this eventually determines the electronic structure of BP nanotubes. PMID:27198550

  19. Prediction of the electronic structure of single-walled black phosphorus nanotubes.

    PubMed

    Guan, Lixiu; Chen, Guifeng; Tao, Junguang

    2016-06-01

    Due to its high carrier mobility and tunable bandgap, phosphorene has been the subject of immense interest recently. Herein, we show using density functional theory based calculations that black phosphorus (BP) nanotubes are achievable. Moreover, the electronic properties of BP nanotubes are explored. In contrast to their monolayer and bulk counterparts, most BP nanotubes possess indirect band gaps. In addition, strong anisotropic electronic behaviors are observed between zigzag and armchair nanotubes. Semiconducting to semi-metallic transition occurs only for zigzag tubes when its diameter shrinks to ∼1.5 nm. This difference is strongly related to the bond bending after the formation of the nanotubes which governs the s-p hybridization, as well as electron distribution in different p orbitals and this eventually determines the electronic structure of BP nanotubes.

  20. Carbon nanotube based pressure sensor for flexible electronics

    SciTech Connect

    So, Hye-Mi; Sim, Jin Woo; Kwon, Jinhyeong; Yun, Jongju; Baik, Seunghyun; Chang, Won Seok

    2013-12-15

    Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate.

  1. Chirality Dependence of the Absorption Cross Section of Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Vialla, Fabien; Roquelet, Cyrielle; Langlois, Benjamin; Delport, Géraud; Santos, Silvia Morim; Deleporte, Emmanuelle; Roussignol, Philippe; Delalande, Claude; Voisin, Christophe; Lauret, Jean-Sébastien

    2013-09-01

    The variation of the optical absorption of carbon nanotubes with their geometry has been a long-standing question at the heart of both metrological and applicative issues, in particular because optical spectroscopy is one of the primary tools for the assessment of the chiral species abundance of samples. Here, we tackle the chirality dependence of the optical absorption with an original method involving ultraefficient energy transfer in porphyrin-nanotube compounds that allows uniform photoexcitation of all chiral species. We measure the absolute absorption cross section of a wide range of semiconducting nanotubes at their S22 transition and show that it varies by up to a factor of 2.2 with the chiral angle, with type I nanotubes showing a larger absorption. In contrast, the luminescence quantum yield remains almost constant.

  2. Adsorption of simple benzene derivatives on carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Woods, L. M.; Bădescu, Ş. C.; Reinecke, T. L.

    2007-04-01

    The adsorption of simple benzene derivatives composed of a benzene ring with NO2 , CH3 , or NH2 functional groups on a semiconducting single-wall carbon nanotube is studied using the density-functional theory within the local-density approximation. The effects of molecular relaxation in the adsorption process are obtained, as well as the adsorption energies and equilibrium distances for several molecular locations and orientations on the surface. We find that all of these benzene derivatives are physisorbed mainly through the interaction of the π orbitals of the benzene ring and those of the carbon nanotube. These aromatics do not change significantly the carbon nanotube’s electronic structure, and therefore only small changes in the nanotube’s properties are expected. This suggests that these benzene derivatives are suitable for noncovalent nanotube functionalization and molecule immobilization on nanotube surfaces.

  3. Multi-Scale Simulations of Carbon Nanotubes: Mechanics and Electronics

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak

    2003-01-01

    Carbon Nanotube (CNT) is a tubular form of carbon with diameter as small as 1 nm. Length: few mn to microns. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits extraordinary mechanical properties; Young's modulus over 1 Tera Pascal, as stiff as diamond, and tensile strength approx. 200 GPa. CNT can be metallic or semiconducting, depending on chirality.

  4. Multiparticle Exciton Ionization in Shallow Doped Carbon Nanotubes.

    PubMed

    Sau, Jay D; Crochet, Jared J; Doorn, Stephen K; Cohen, Marvin L

    2013-03-21

    Shallow hole doping in small-diameter semiconducting carbon nanotubes with a valley degeneracy is predicted to result in the resonant ionization of excitons into free electron-hole pairs. This mechanism, which relies on the chirality of the electronic states, causes excitons to decay with high efficiencies where the rate scales as the square of the dopant density. Moreover, multiparticle exciton ionization can account for delocalized fluorescence quenching when a few holes per micrometer of tube length are present.

  5. Ultrafast Nonlinear Optics in the Tunneling Junction

    NASA Astrophysics Data System (ADS)

    Yarotski, Dmitry

    2014-03-01

    Coupling of the electromagnetic radiation to the tip-sample junction of a scanning tunneling microscope (STM) offers exciting opportunities in molecular adsorbate identification, high-resolution dopant profiling, studies of the molecular motion and detection of dynamic changes in the electronic structure of the materials. Microwave spectral region is of particular interest because it encompasses rotational, magnetic and other resonances of molecular and solid state systems. However, previous works have either used external microwave sources or generated microwave radiation by a nonlinear mixing of the outputs from two continuous-wave lasers in a tunneling junction. In both cases, the usable spectrum was limited to a single or few frequencies. On the other hand, the regular train of pulses from a mode-locked ultrafast laser has a spectrum which represents an optical frequency comb, with a series of narrow lines (modes) spaced by the pulse repetition frequency. Here, we will show that the nonlinear response of the tunneling junction of an STM to the field of ultrashort laser pulses results in an intermode mixing that produces microwave frequency comb (MFC) with harmonics up to n = 200 (14.85 GHz) on both semiconducting and metallic surfaces. The observed dependence of the microwave power on the harmonic number reveals adverse effects of the tunneling gap capacitance but also shows that the roll-off at higher microwave frequencies should be negligible within the tunneling junction itself leading to intrinsic MFC spread up to THz region. We also demonstrate that MFC generation on semiconductor surface might have the same origin as THz generation in a surface depletion field. Generation of the broadband microwave signals within the tunneling junction should reduce the extraneous effects and provide significantly higher coupling efficiency. With improved frequency response, the described MFC-STM may find broad range of applications in nanoscale characterization of

  6. Physical Properties of Thin Film Semiconducting Materials

    NASA Astrophysics Data System (ADS)

    Bouras, N.; Djebbouri, M.; Outemzabet, R.; Sali, S.; Zerrouki, H.; Zouaoui, A.; Kesri, N.

    2005-10-01

    The physics and chemistry of semiconducting materials is a continuous question of debate. We can find a large stock of well-known properties but at the same time, many things are not understood. In recent years, porous silicon (PS-Si), diselenide of copper and indium (CuInSe2 or CIS) and metal oxide semiconductors like tin oxide (SnO2) and zinc oxide (ZnO) have been subjected to extensive studies because of the rising interest their potential applications in fields such as electronic components, solar panels, catalysis, gas sensors, in biocompatible materials, in Li-based batteries, in new generation of MOSFETS. Bulk structure and surface and interface properties play important roles in all of these applications. A deeper understanding of these fundamental properties would impact largely on technological application performances. In our laboratory, thin films of undoped and antimony-doped films of tin oxide have been deposited by chemical vapor deposition. Spray pyrolysis was used for ZnO. CIS was prepared by flash evaporation or close-space vapor transport. Some of the deposition parameters have been varied, such as substrate temperature, time of deposition (or anodization), and molar concentration of bath preparation. For some samples, thermal annealing was carried out under oxygen (or air), under nitrogen gas and under vacuum. Deposition and post-deposition parameters are known to strongly influence film structure and electrical resistivity. We investigated the influence of film thickness and thermal annealing on structural optical and electrical properties of the films. Examination of SnO2 by x-ray diffraction showed that the main films are polycrystalline with rutile structure. The x-ray spectra of ZnO indicated a hexagonal wurtzite structure. Characterizations of CIS films with compositional analysis, x-ray diffraction, scanning microscopy, spectrophotometry, and photoluminescence were carried out.

  7. A facile and low-cost length sorting of single-wall carbon nanotubes by precipitation and applications for thin-film transistors

    NASA Astrophysics Data System (ADS)

    Gui, Hui; Chen, Haitian; Khripin, Constantine Y.; Liu, Bilu; Fagan, Jeffrey A.; Zhou, Chongwu; Zheng, Ming

    2016-02-01

    Semiconducting single-wall carbon nanotubes (SWCNTs) with long lengths are highly desirable for many applications such as thin-film transistors and circuits. Previously reported length sorting techniques usually require sophisticated instrumentation and are hard to scale up. In this paper, we report for the first time a general phenomenon of a length-dependent precipitation of surfactant-dispersed carbon nanotubes by polymers, salts, and their combinations. Polyelectrolytes such as polymethacrylate (PMAA) and polystyrene sulfonate (PSS) are found to be especially effective on cholate and deoxycholate dispersed SWCNTs. By adding PMAA to these nanotube dispersions in a stepwise fashion, we have achieved nanotube precipitation in a length-dependent order: first nanotubes with an average length of 650 nm, and then successively of 450 nm, 350 nm, and 250 nm. A similar effect of nanotube length sorting has also been observed for PSS. To demonstrate the utility of the length fractionation, the 650 nm-long nanotube fraction was subjected to an aqueous two-phase separation to obtain semiconducting enriched nanotubes. Thin-film transistors fabricated with the resulting semiconducting SWCNTs showed a carrier mobility up to 18 cm2 (V s)-1 and an on/off ratio up to 107. Our result sheds new light on the phase behavior of aqueous nanotube dispersions under high concentrations of polymers and salts, and offers a facile, low-cost, and scalable method to produce length sorted semiconducting nanotubes for macroelectronics applications.Semiconducting single-wall carbon nanotubes (SWCNTs) with long lengths are highly desirable for many applications such as thin-film transistors and circuits. Previously reported length sorting techniques usually require sophisticated instrumentation and are hard to scale up. In this paper, we report for the first time a general phenomenon of a length-dependent precipitation of surfactant-dispersed carbon nanotubes by polymers, salts, and their

  8. Boron Nitride Nanotubes for Engineering Applications

    NASA Technical Reports Server (NTRS)

    Hurst, Janet; Hull, David; Gorican, Daniel

    2005-01-01

    Boron nitride nanotubes (BNNT) are of significant interest to the scientific and technical communities for many of the same reasons that carbon nanotubes (CNT) have attracted wide attention. Both materials have potentially unique and important properties for structural and electronic applications. However of even more consequence than their similarities may be the complementary differences between carbon and boron nitride nanotubes While BNNT possess a very high modulus similar to CNT, they also possess superior chemical and thermal stability. Additionally, BNNT have more uniform electronic properties, with a uniform band gap of 5.5 eV while CNT vary from semi-conductive to highly conductive behavior. Boron nitride nanotubes have been synthesized both in the literature and at NASA Glenn Research Center, by a variety of methods such as chemical vapor deposition, arc discharge and reactive milling. Consistent large scale production of a reliable product has proven difficult. Progress in the reproducible synthesis of 1-2 gram sized batches of boron nitride nanotubes will be discussed as well as potential uses for this unique material.

  9. Electronic modulations in a single wall carbon nanotube induced by the Au(111) surface reconstruction

    SciTech Connect

    Clair, Sylvain; Shin, Hyung-Joon; Kim, Yousoo E-mail: maki@riken.jp; Kawai, Maki E-mail: maki@riken.jp

    2015-02-02

    The structural and electronic structure of single wall carbon nanotubes adsorbed on Au(111) has been investigated by low-temperature scanning tunneling microscopy and spectroscopy. The nanotubes were dry deposited in situ in ultrahigh vacuum onto a perfectly clean substrate. In some cases, the native herringbone reconstruction of the Au(111) surface interacted directly with adsorbed nanotubes and produced long-range periodic oscillations in their local density of states, corresponding to charge transfer modulations along the tube axis. This effect, however, was observed not systematically for all tubes and only for semiconducting tubes.

  10. Electronic modulations in a single wall carbon nanotube induced by the Au(111) surface reconstruction

    NASA Astrophysics Data System (ADS)

    Clair, Sylvain; Shin, Hyung-Joon; Kim, Yousoo; Kawai, Maki

    2015-02-01

    The structural and electronic structure of single wall carbon nanotubes adsorbed on Au(111) has been investigated by low-temperature scanning tunneling microscopy and spectroscopy. The nanotubes were dry deposited in situ in ultrahigh vacuum onto a perfectly clean substrate. In some cases, the native herringbone reconstruction of the Au(111) surface interacted directly with adsorbed nanotubes and produced long-range periodic oscillations in their local density of states, corresponding to charge transfer modulations along the tube axis. This effect, however, was observed not systematically for all tubes and only for semiconducting tubes.

  11. Binding energies and electronic structures of adsorbed titanium chains on carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Yang, Chih-Kai; Zhao, Jijun; Lu, Jianping

    2002-03-01

    Our calculations based on first principles have shown that titanium is much favored energetically over gold and aluminum to form a continuous chain on a variety of single-wall carbon nanotubes (SWNT). Results from two zigzag nanotubes, (10,0) and (14,0), and two armchairs, (6,6) and (8,8), indicate that binding energy for a Ti-adsorbed SWNT is generally six to seven eV per unit cell larger than a Au or Al-adsorbed SWNT. Furthermore, the adsorbed Ti chain generates additional states in the band gaps of the two semi-conducting zigzag nanotubes, transforming them into metals.

  12. Gel electrophoresis using a selective radical for the separation of single-walled carbon nanotubes.

    PubMed

    Mesgari, Sara; Sundramoorthy, Ashok Kumar; Loo, Leslie S; Chan-Park, Mary B

    2014-01-01

    We have applied agarose gel electrophoresis (AGE) to single-walled carbon nanotubes (SWNTs) that have been pre-reacted with metallic-selective ionic radicals and then re-suspended with sodium cholate (SC) surfactant to obtain highly purified (up to 98%) semiconducting single-walled carbon nanotubes (s-SWNTs). The proposed combination method exploits the preferential reactivity with the metallic nanotube of the radicals generated from an azo naphthalene compound (Direct Blue 71(I)) to preferentially increase the surface charge, and therefore the electrophoretic mobilities, of the metallic nanotube population under the influence of the electric field in AGE. The excellent separation achieved was verified by UV-vis-NIR and Raman spectroscopy as well as by the performance of field effect transistors fabricated with semiconducting-enriched SWNTs. FETs fabricated with -assisted AGE-separated semiconducting nanotubes exhibited mobilities of ∼3.6 to 11.7 cm(2) V(-1) s(-1) and on/off ratios from 10(2) to 10(6). PMID:25319125

  13. Photonics based on carbon nanotubes

    PubMed Central

    2013-01-01

    Among direct-bandgap semiconducting nanomaterials, single-walled carbon nanotubes (SWCNT) exhibit strong quasi-one-dimensional excitonic optical properties, which confer them a great potential for their integration in future photonics devices as an alternative solution to conventional inorganic semiconductors. In this paper, we will highlight SWCNT optical properties for passive as well as active applications in future optical networking. For passive applications, we directly compare the efficiency and power consumption of saturable absorbers (SAs) based on SWCNT with SA based on conventional multiple quantum wells. For active applications, exceptional photoluminescence properties of SWCNT, such as excellent light-emission stabilities with temperature and excitation power, hold these nanometer-scale materials as prime candidates for future active photonics devices with superior performances. PMID:23803293

  14. Carbon Nanotube Based Light Sensor

    NASA Technical Reports Server (NTRS)

    Wincheski, russell A. (Inventor); Smits, Jan M. (Inventor); Jordan, Jeffrey D. (Inventor); Watkins, Anthony Neal (Inventor); Ingram, JoAnne L. (Inventor)

    2006-01-01

    A light sensor substrate comprises a base made from a semi-conductive material and topped with a layer of an electrically non-conductive material. A first electrode and a plurality of carbon nanotube (CNT)-based conductors are positioned on the layer of electrically non-conductive material with the CNT-based conductors being distributed in a spaced apart fashion about a periphery of the first electrode. Each CNT-based conductor is coupled on one end thereof to the first electrode and extends away from the first electrode to terminate at a second free end. A second or gate electrode is positioned on the non-conductive material layer and is spaced apart from the second free end of each CNT-based conductor. Coupled to the first and second electrode is a device for detecting electron transfer along the CNT-based conductors resulting from light impinging on the CNT-based conductors.

  15. Electronic Transport in Molecular Junction Based on C20 Cages

    NASA Astrophysics Data System (ADS)

    Ouyang, Fang-Ping; Xu, Hui

    2007-04-01

    Choosing closed-ended armchair (5, 5) single-wall carbon nanotubes (CCNTs) as electrodes, we investigate the electron transport properties across an all-carbon molecular junction consisting of C20 molecules suspended between two semi-infinite carbon nanotubes. It is shown that the conductances are quite sensitive to the number of C20 molecules between electrodes for both configuration CF1 and double-bonded models: the conductances of C20 dimers are markedly smaller than those of monomers. The physics is that incident electrons easily pass the C20 molecules and are predominantly scattered at the C20-C20 junctions. Moreover, we study the doping effect of such molecular junction by doping nitrogen atoms substitutionally. The bonding property of the molecular junction with configuration CF1 has been analysed by calculating the Mulliken atomic charges. Our results have revealed that the C atoms in N-doped junctions are more ionic than those in pure-carbon ones, leading to the fact that N-doped junctions have relatively large conductance.

  16. Photovoltaic response of carbon nanotube-silicon heterojunctions: effect of nanotube film thickness and number of walls.

    PubMed

    Castrucci, P; Del Gobbo, S; Camilli, L; Scarselli, M; Casciardi, S; Tombolini, F; Convertino, A; Fortunato, G; De Crescenzi, M

    2011-10-01

    We report on the multiwall carbon nanotube application as energy conversion material to fabricate thin film solar cells, with nanotubes acting as photogeneration sites as well as charge separators, collectors and carrier transporters. The device consists of a semitransparent thin film of nanotubes coating a n-type crystalline silicon substrate. Under illumination electron-hole (e-h) pairs, generated in the nanotubes and in the silicon substrate underneath, are split and charges are transported through the nanotubes (electrons) and the n-Si (holes). We found that a suitable thickness of the nanotube thin film, high density of Schottky junctions between nanotubes and n-Si and lowest number of nanotube walls are all fundamental parameters to improve the device incident photon to electron conversion efficiency. Multiwall carbon nanotubes have been synthesized by chemical vapour deposition in an ultra high vacuum chamber by evaporating a given amount of iron at room temperature and then exposing the substrate kept at 800 degrees C at acetylene gas. The amount of deposited iron is found to directly affect the nanotube size distribution (inner and outer diameter) and therefore the number of walls of the nanotubes.

  17. Membrane nanotubes facilitate long-distance interactions between natural killer cells and target cells.

    PubMed

    Chauveau, Anne; Aucher, Anne; Eissmann, Philipp; Vivier, Eric; Davis, Daniel M

    2010-03-23

    Membrane nanotubes are membranous tethers that physically link cell bodies over long distances. Here, we present evidence that nanotubes allow human natural killer (NK) cells to interact functionally with target cells over long distances. Nanotubes were formed when NK cells contacted target cells and moved apart. The frequency of nanotube formation was dependent on the number of receptor/ligand interactions and increased on NK cell activation. Most importantly, NK cell nanotubes contained a submicron scale junction where proteins accumulated, including DAP10, the signaling adaptor that associates with the activating receptor NKG2D, and MHC class I chain-related protein A (MICA), a cognate ligand for NKG2D, as occurs at close intercellular synapses between NK cells and target cells. Quantitative live-cell fluorescence imaging suggested that MICA accumulated at small nanotube synapses in sufficient numbers to trigger cell activation. In addition, tyrosine-phosphorylated proteins and Vav-1 accumulated at such junctions. Functionally, nanotubes could aid the lysis of distant target cells either directly or by moving target cells along the nanotube path into close contact for lysis via a conventional immune synapse. Target cells moving along the nanotube path were commonly polarized such that their uropods faced the direction of movement. This is the opposite polarization than for normal cell migration, implying that nanotubes can specifically drive target cell movement. Finally, target cells that remained connected to an NK cell by a nanotube were frequently lysed, whereas removing the nanotube using a micromanipulator reduced lysis of these target cells.

  18. Heteroporphyrin nanotubes and composites

    DOEpatents

    Shelnutt, John A.; Medforth, Craig J.; Wang, Zhongchun

    2006-11-07

    Heteroporphyrin nanotubes, metal nanostructures, and metal/porphyrin-nanotube composite nanostructures formed using the nanotubes as photocatalysts and structural templates, and the methods for forming the nanotubes and composites.

  19. Heteroporphyrin nanotubes and composites

    DOEpatents

    Shelnutt, John A.; Medforth, Craig J.; Wang, Zhongchun

    2007-05-29

    Heteroporphyrin nanotubes, metal nanostructures, and metal/porphyrin-nanotube composite nanostructures formed using the nanotubes as photocatalysts and structural templates, and the methods for forming the nanotubes and composites.

  20. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

    PubMed

    Cai, Ronggang; Kassa, Hailu G; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H; Ruzié, Christian; van Breemen, Albert J J M; Gelinck, Gerwin H; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M

    2016-03-21

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.

  1. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  2. Orienting semi-conducting π-conjugated polymers.

    PubMed

    Brinkmann, Martin; Hartmann, Lucia; Biniek, Laure; Tremel, Kim; Kayunkid, Navaphun

    2014-01-01

    The present review focuses on the recent progress made in thin film orientation of semi-conducting polymers with particular emphasis on methods using epitaxy and shear forces. The main results reported in this review deal with regioregular poly(3-alkylthiophene)s and poly(dialkylfluorenes). Correlations existing between processing conditions, macromolecular parameters and the resulting structures formed in thin films are underlined. It is shown that epitaxial orientation of semi-conducting polymers can generate a large palette of semi-crystalline and nanostructured morphologies by a subtle choice of the orienting substrates and growth conditions.

  3. Spin and charge transport in double-junction Fe/MgO/GaAs/MgO/Fe heterostructures

    SciTech Connect

    Wolski, S. Szczepański, T.; Dugaev, V. K.; Barnaś, J.; Landgraf, B.; Slobodskyy, T.; Hansen, W.

    2015-01-28

    We present theoretical and experimental results on tunneling current in single Fe/MgO/GaAs and double Fe/MgO/GaAs/MgO/Fe tunnel junctions. The charge and spin currents are calculated as a function of external voltage for different sets of parameters characterizing the semiconducting GaAs layer. Transport characteristics of a single Fe/MgO/GaAs junction reveal typical diode as well as spin diode features. The results of numerical calculations are compared with current-voltage characteristics measured experimentally for double tunnel junction structures, and a satisfactory agreement of the theoretical and experimental results has been achieved.

  4. Ab Initio Study of Covalently Functionalized Graphene and Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Jha, Sanjiv; Hammouri, Mahmoud; Vasiliev, Igor; Magedov, Igor; Frolova, Liliya; Kalugin, Nikolai

    2014-03-01

    The electronic and structural properties of carbon nanomaterials can be affected by chemical functionalization. We apply ab initio computational methods based on density functional theory to study the properties of graphene and single-walled carbon nanotubes functionalized with benzyne. Our calculations are carried out using the SIESTA electronic structure code combined with the generalized gradient approximation for the exchange correlation functional. The calculated binding energies, densities of states, and band structures of functionalized graphene and carbon nanotubes are analyzed in comparison with the available experimental data. The surfaces of carbon nanotubes are found to be significantly more reactive toward benzyne molecules than the surface of graphene. The strength of interaction between benzyne and carbon nanotubes is affected by the curvature of the nanotube sidewall. The binding energies of benzyne molecules attached to both semiconducting zigzag and metallic armchair nanotubes increase with decreasing the nanotube diameter. Supported by NSF CHE-1112388, NMSU GREG Award, NSF ECCS-0925988, NIH-5P20RR016480-12, and NIH- P20 GM103451.

  5. Electronic transport properties of inner and outer shells in near ohmic-contacted double-walled carbon nanotube transistors

    SciTech Connect

    Zhang, Yuchun; Zhou, Liyan; Zhao, Shangqian; Wang, Wenlong; Liang, Wenjie; Wang, Enge

    2014-06-14

    We investigate electronic transport properties of field-effect transistors based on double-walled carbon nanotubes, of which inner shells are metallic and outer shells are semiconducting. When both shells are turned on, electron-phonon scattering is found to be the dominant phenomenon. On the other hand, when outer semiconducting shells are turned off, a zero-bias anomaly emerges in the dependence of differential conductance on the bias voltage, which is characterized according to the Tomonaga-Luttinger liquid model describing tunneling into one-dimensional materials. We attribute these behaviors to different contact conditions for outer and inner shells of the double-walled carbon nanotubes. A simple model combining Luttinger liquid model for inner metallic shells and electron-phonon scattering in outer semiconducting shells is given here to explain our transport data at different temperatures.

  6. The use of NH3 to promote the production of large-diameter single-walled carbon nanotubes with a narrow (n,m) distribution.

    PubMed

    Zhu, Zhen; Jiang, Hua; Susi, Toma; Nasibulin, Albert G; Kauppinen, Esko I

    2011-02-01

    We demonstrate here a simple and effective (n,m)-selective growth of single-walled carbon nanotubes (SWCNTs) in an aerosol floating catalyst chemical vapor deposition (CVD) process by introducing a certain amount of ammonia (NH(3)). Chiralities of carbon nanotubes produced in the presence of 500 ppm NH(3) at 880 °C are narrowly distributed around the major semiconducting (13,12) nanotube with over 90% of SWCNTs having large chiral angles in the range 20°-30°, and nearly 50% in the range 27°-29°. The developed synthesis process enables chiral-selective growth at high temperature for structurally stable carbon nanotubes with large diameters.

  7. Selective Surface Charge Sign Reversal on Metallic Carbon Nanotubes for Facile Ultrahigh Purity Nanotube Sorting.

    PubMed

    Wang, Jing; Nguyen, Tuan Dat; Cao, Qing; Wang, Yilei; Tan, Marcus Y C; Chan-Park, Mary B

    2016-03-22

    Semiconducting (semi-) single-walled carbon nanotubes (SWNTs) must be purified of their metallic (met-) counterparts for most applications including nanoelectronics, solar cells, chemical sensors, and artificial skins. Previous bulk sorting techniques are based on subtle contrasts between properties of different nanotube/dispersing agent complexes. We report here a method which directly exploits the nanotube band structure differences. For the heterogeneous redox reaction of SWNTs with oxygen/water couple, the aqueous pH can be tuned so that the redox kinetics is determined by the availability of nanotube electrons only at/near the Fermi level, as predicted quantitatively by the Marcus-Gerischer (MG) theory. Consequently, met-SWNTs oxidize much faster than semi-SWNTs and only met-SWNTs selectively reverse the sign of their measured surface zeta potential from negative to positive at the optimized acidic pH when suspended with nonionic surfactants. By passing the redox-reacted nanotubes through anionic hydrogel beads, we isolate semi-SWNTs to record high electrically verified purity above 99.94% ± 0.04%. This facile charge sign reversal (CSR)-based sorting technique is robust and can sort SWNTs with a broad diameter range.

  8. One-dimensional transport in hybrid metal-semiconductor nanotube systems

    NASA Astrophysics Data System (ADS)

    Gelin, M. F.; Bondarev, I. V.

    2016-03-01

    We develop an electron transport theory for the hybrid system of a semiconducting carbon nanotube that encapsulates a one-atom-thick metallic wire. The theory predicts Fano resonances in electron transport through the system, whereby the interaction of electrons on the wire with nanotube plasmon generated near fields blocks some of the wire transmission channels to open up the new coherent plasmon-mediated channel in the nanotube forbidden gap outside the wire transmission band. Such a channel makes the entire hybrid system transparent in the energy domain where neither wire nor nanotube is individually transparent. This effect can be used to control and optimize charge transfer in hybrid nanodevices built on metal-semiconductor nanotube systems.

  9. High-throughput optical imaging and spectroscopy of individual carbon nanotubes in devices

    NASA Astrophysics Data System (ADS)

    Liu, Kaihui; Hong, Xiaoping; Zhou, Qin; Jin, Chenhao; Li, Jinghua; Zhou, Weiwei; Liu, Jie; Wang, Enge; Zettl, Alex; Wang, Feng

    2013-12-01

    Single-walled carbon nanotubes are uniquely identified by a pair of chirality indices (n,m), which dictate the physical structures and electronic properties of each species. Carbon nanotube research is currently facing two outstanding challenges: achieving chirality-controlled growth and understanding chirality-dependent device physics. Addressing these challenges requires, respectively, high-throughput determination of the nanotube chirality distribution on growth substrates and in situ characterization of the nanotube electronic structure in operating devices. Direct optical imaging and spectroscopy techniques are well suited for both goals, but their implementation at the single nanotube level has remained a challenge due to the small nanotube signal and unavoidable environment background. Here, we report high-throughput real-time optical imaging and broadband in situ spectroscopy of individual carbon nanotubes on various substrates and in field-effect transistor devices using polarization-based microscopy combined with supercontinuum laser illumination. Our technique enables the complete chirality profiling of hundreds of individual carbon nanotubes, both semiconducting and metallic, on a growth substrate. In devices, we observe that high-order nanotube optical resonances are dramatically broadened by electrostatic doping, an unexpected behaviour that points to strong interband electron-electron scattering processes that could dominate ultrafast dynamics of excited states in carbon nanotubes.

  10. High-throughput optical imaging and spectroscopy of individual carbon nanotubes in devices.

    PubMed

    Liu, Kaihui; Hong, Xiaoping; Zhou, Qin; Jin, Chenhao; Li, Jinghua; Zhou, Weiwei; Liu, Jie; Wang, Enge; Zettl, Alex; Wang, Feng

    2013-12-01

    Single-walled carbon nanotubes are uniquely identified by a pair of chirality indices (n,m), which dictate the physical structures and electronic properties of each species. Carbon nanotube research is currently facing two outstanding challenges: achieving chirality-controlled growth and understanding chirality-dependent device physics. Addressing these challenges requires, respectively, high-throughput determination of the nanotube chirality distribution on growth substrates and in situ characterization of the nanotube electronic structure in operating devices. Direct optical imaging and spectroscopy techniques are well suited for both goals, but their implementation at the single nanotube level has remained a challenge due to the small nanotube signal and unavoidable environment background. Here, we report high-throughput real-time optical imaging and broadband in situ spectroscopy of individual carbon nanotubes on various substrates and in field-effect transistor devices using polarization-based microscopy combined with supercontinuum laser illumination. Our technique enables the complete chirality profiling of hundreds of individual carbon nanotubes, both semiconducting and metallic, on a growth substrate. In devices, we observe that high-order nanotube optical resonances are dramatically broadened by electrostatic doping, an unexpected behaviour that points to strong interband electron-electron scattering processes that could dominate ultrafast dynamics of excited states in carbon nanotubes.

  11. A Single-Material Logical Junction Based on 2D Crystal PdS2.

    PubMed

    Ghorbani-Asl, Mahdi; Kuc, Agnieszka; Miró, Pere; Heine, Thomas

    2016-02-01

    A single-material logical junction with negligible contact resistance is designed by exploiting quantum-confinement effects in 1T PdS2 . The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor.

  12. A Single-Material Logical Junction Based on 2D Crystal PdS2.

    PubMed

    Ghorbani-Asl, Mahdi; Kuc, Agnieszka; Miró, Pere; Heine, Thomas

    2016-02-01

    A single-material logical junction with negligible contact resistance is designed by exploiting quantum-confinement effects in 1T PdS2 . The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor. PMID:26632273

  13. Solvent effects on polymer sorting of carbon nanotubes with applications in printed electronics.

    PubMed

    Wang, Huiliang; Hsieh, Bing; Jiménez-Osés, Gonzalo; Liu, Peng; Tassone, Christopher J; Diao, Ying; Lei, Ting; Houk, Kendall N; Bao, Zhenan

    2015-01-01

    Regioregular poly(3-alkylthiophene) (P3AT) polymers have been previously reported for the selective, high-yield dispersion of semiconducting single-walled carbon nanotubes (SWCNTs) in toluene. Here, five alternative solvents are investigated, namely, tetrahydrofuran, decalin, tetralin, m-xylene, and o-xylene, for the dispersion of SWCNTs by poly(3-dodecylthiophene) P3DDT. The dispersion yield could be increased to over 40% using decalin or o-xylene as the solvents while maintaining high selectivity towards semiconducting SWCNTs. Molecular dynamics (MD) simulations in explicit solvents are used to explain the improved sorting yield. In addition, a general mechanism is proposed to explain the selective dispersion of semiconducting SWCNTs by conjugated polymers. The possibility to perform selective sorting of semiconducting SWCNTs using various solvents provides a greater diversity of semiconducting SWCNT ink properties, such as boiling point, viscosity, and surface tension as well as toxicity. The efficacy of these new semiconducting SWCNT inks is demonstrated by using the high boiling point and high viscosity solvent tetralin for inkjet-printed transistors, where solvent properties are more compatible with the inkjet printing head and improved droplet formation.

  14. Solvent effects on polymer sorting of carbon nanotubes with applications in printed electronics.

    PubMed

    Wang, Huiliang; Hsieh, Bing; Jiménez-Osés, Gonzalo; Liu, Peng; Tassone, Christopher J; Diao, Ying; Lei, Ting; Houk, Kendall N; Bao, Zhenan

    2015-01-01

    Regioregular poly(3-alkylthiophene) (P3AT) polymers have been previously reported for the selective, high-yield dispersion of semiconducting single-walled carbon nanotubes (SWCNTs) in toluene. Here, five alternative solvents are investigated, namely, tetrahydrofuran, decalin, tetralin, m-xylene, and o-xylene, for the dispersion of SWCNTs by poly(3-dodecylthiophene) P3DDT. The dispersion yield could be increased to over 40% using decalin or o-xylene as the solvents while maintaining high selectivity towards semiconducting SWCNTs. Molecular dynamics (MD) simulations in explicit solvents are used to explain the improved sorting yield. In addition, a general mechanism is proposed to explain the selective dispersion of semiconducting SWCNTs by conjugated polymers. The possibility to perform selective sorting of semiconducting SWCNTs using various solvents provides a greater diversity of semiconducting SWCNT ink properties, such as boiling point, viscosity, and surface tension as well as toxicity. The efficacy of these new semiconducting SWCNT inks is demonstrated by using the high boiling point and high viscosity solvent tetralin for inkjet-printed transistors, where solvent properties are more compatible with the inkjet printing head and improved droplet formation. PMID:25138541

  15. Thiofluorographene-hydrophilic graphene derivative with semiconducting and genosensing properties.

    PubMed

    Urbanová, Veronika; Holá, Kateřina; Bourlinos, Athanasios B; Čépe, Klára; Ambrosi, Adriano; Loo, Adeline Huiling; Pumera, Martin; Karlický, František; Otyepka, Michal; Zbořil, Radek

    2015-04-01

    We present the first example of covalent chemistry on fluorographene, enabling the attachment of -SH groups through nucleophilic substitution of fluorine in a polar solvent. The resulting thiographene-like, 2D derivative is hydrophilic with semiconducting properties and bandgap between 1 and 2 eV depending on F/SH ratio. Thiofluorographene is applied in DNA biosensing by electrochemical impedance spectroscopy.

  16. Probing Photosensitization by Functionalized Carbon Nanotubes.

    PubMed

    Chen, Chia-Ying; Zepp, Richard G

    2015-12-01

    Carbon nanotubes (CNTs) photosensitize the production of reactive oxygen species that may damage organisms by biomembrane oxidation or mediate environmental transformations of CNTs. Photosensitization by derivatized carbon nanotubes from various synthetic methods, and thus with different intrinsic characteristics (e.g., diameter and electronic properties), has been investigated under environmentally relevant aquatic conditions. We used the CNT-sensitized photoisomerization of sorbic acid ((2E,4E)-hexa-2,4-dienoic acid) and singlet oxygen formation to quantify the triplet states ((3)CNT*) formed upon irradiation of selected single-walled carbon nanotubes (SWCNTs) and multiwalled carbon nanotubes (MWCNTs). The CNTs used in our studies were derivatized by carboxyl groups to facilitate their dispersion in water. Results indicate that high-defect-density (thus well-stabilized), small-diameter, and semiconducting-rich CNTs have higher-measured excited triplet state formation and therefore singlet oxygen ((1)O2) yield. Derivatized SWCNTs were significantly more photoreactive than derivatized MWCNTs. Moreover, addition of sodium chloride resulted in increased aggregation and small increases in (1)O2 production of CNTs. The most photoreactive CNTs exhibited comparable photoreactivity (in terms of (3)CNT* formation and (1)O2 yield) to reference natural organic matter (NOM) under sunlight irradiation with the same mass-based concentration. Selected reference NOM could therefore be useful in evaluating environmental photoreactivity or intended antibacterial applications of CNTs.

  17. Ballasted and electrically steerable carbon nanotube field emitters

    NASA Astrophysics Data System (ADS)

    Cole, M. T.; Li, C.; Qu, K.; Zhang, Y.; Wang, B.; Pribat, D.; Milne, W. I.

    2012-09-01

    Here we present our on-going efforts toward the development of stable ballasted carbon nanotube-based field emitters employing hydrothermally synthesized zinc oxide nanowires and thin film silicon-on-insulator substrates. The semiconducting channel in each controllably limits the emission current thereby preventing detrimental burn-out of individual emitters that occurs due to unavoidable statistical variability in emitter characteristics, particularly in their length. Fabrication details and emitter characterization are discussed in addition to their field emission performance. The development of a beam steerable triode electron emitter formed from hexagonal carbon nanotube arrays with central focusing nanotube electrodes, is also described. Numerical ab-initio simulations are presented to account for the empirical emission characteristics. Our engineered ballasted emitters have shown some of the lowest reported lifetime variations (< 0.7%) with on-times of < 1 ms, making them ideally-suited for next-generation displays, environmental lighting and portable x-rays sources.

  18. EDITORIAL: Focus on Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    2003-09-01

    The study of carbon nanotubes, since their discovery by Iijima in 1991, has become a full research field with significant contributions from all areas of research in solid-state and molecular physics and also from chemistry. This Focus Issue in New Journal of Physics reflects this active research, and presents articles detailing significant advances in the production of carbon nanotubes, the study of their mechanical and vibrational properties, electronic properties and optical transitions, and electrical and transport properties. Fundamental research, both theoretical and experimental, represents part of this progress. The potential applications of nanotubes will rely on the progress made in understanding their fundamental physics and chemistry, as presented here. We believe this Focus Issue will be an excellent guide for both beginners and experts in the research field of carbon nanotubes. It has been a great pleasure to edit the many excellent contributions from Europe, Japan, and the US, as well from a number of other countries, and to witness the remarkable effort put into the manuscripts by the contributors. We thank all the authors and referees involved in the process. In particular, we would like to express our gratitude to Alexander Bradshaw, who invited us put together this Focus Issue, and to Tim Smith and the New Journal of Physics staff for their extremely efficient handling of the manuscripts. Focus on Carbon Nanotubes Contents <;A article="1367-2630/5/1/117">Transport theory of carbon nanotube Y junctions R Egger, B Trauzettel, S Chen and F Siano The tubular conical helix of graphitic boron nitride F F Xu, Y Bando and D Golberg Formation pathways for single-wall carbon nanotube multiterminal junctions Inna Ponomareva, Leonid A Chernozatonskii, Antonis N Andriotis and Madhu Menon Synthesis and manipulation of carbon nanotubes J W Seo, E Couteau

  19. EDITORIAL: Focus on Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    2003-09-01

    The study of carbon nanotubes, since their discovery by Iijima in 1991, has become a full research field with significant contributions from all areas of research in solid-state and molecular physics and also from chemistry. This Focus Issue in New Journal of Physics reflects this active research, and presents articles detailing significant advances in the production of carbon nanotubes, the study of their mechanical and vibrational properties, electronic properties and optical transitions, and electrical and transport properties. Fundamental research, both theoretical and experimental, represents part of this progress. The potential applications of nanotubes will rely on the progress made in understanding their fundamental physics and chemistry, as presented here. We believe this Focus Issue will be an excellent guide for both beginners and experts in the research field of carbon nanotubes. It has been a great pleasure to edit the many excellent contributions from Europe, Japan, and the US, as well from a number of other countries, and to witness the remarkable effort put into the manuscripts by the contributors. We thank all the authors and referees involved in the process. In particular, we would like to express our gratitude to Alexander Bradshaw, who invited us put together this Focus Issue, and to Tim Smith and the New Journal of Physics staff for their extremely efficient handling of the manuscripts. Focus on Carbon Nanotubes Contents Transport theory of carbon nanotube Y junctions R Egger, B Trauzettel, S Chen and F Siano The tubular conical helix of graphitic boron nitride F F Xu, Y Bando and D Golberg Formation pathways for single-wall carbon nanotube multiterminal junctions Inna Ponomareva, Leonid A Chernozatonskii, Antonis N Andriotis and Madhu Menon Synthesis and manipulation of carbon nanotubes J W Seo, E Couteau, P Umek, K Hernadi, P Marcoux, B Lukic, Cs Mikó, M Milas, R Gaál and L Forró Transitional behaviour in the transformation from active end

  20. Plasmonic sensing structure of carbon nanotubes and gold nanoparticles for hydrogen detection (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Angiola, Marco; Rutherglen, Chris; Galatsis, Kosmas; Martucci, Alessandro

    2015-09-01

    Large attention has been directed toward carbon nanotubes as material for chemical sensors. However, little attention was paid toward the different behavior of the metallic and semiconductive carbon nanotubes as optical sensing materials. Semiconductive or metallic Single Wall Carbon Nanotubes (SWCNTs) have been deposited on gold nanoparticles (NPs) monolayer and used as plasmonic based gas sensor. The coupling between SWCNTs and Au NPs has the aim of combining the reactivity of the nanotubes towards hazardous gases, such as H2, CO, NO2, with the Localized Surface Plasmon Resonance (LSPR) of gold NPs. The LSPR is known to be extremely sensitive to the changes in the dielectric properties of the surrounding medium, a characteristic that has been widely exploited for the preparation of sensing devices. While the use of SWCNTs for gas sensing has been covered in multiple reports, to the best of our knowledge this is the first time that SWCNTs are used as sensing material in an optical sensor for the detection of reducing and oxidizing gases. Two different techniques, ink-jet printer and dropcasting, were used for depositing the transparent CNTs film on the plasmonic layer. Both the deposition techniques proved to be effective for the development of transparent optical sensing films. Metallic SWCNTs showed high sensitivity toward H2 at low temperature and an enhancement of performance at 300°C with the detection of low concentration of H2 and NO2. On the contrary, the semiconductive SWCNTs displayed very poor gas sensing properties, especially for the thinner film.

  1. Electrical properties of carbon nanotube FETs

    NASA Astrophysics Data System (ADS)

    Mizutani, T.; Ohno, Y.; Kishimoto, S.

    2008-08-01

    The electrical properties of carbon nanotube FETs (CNTFETs) have been studied in detail. The conduction type of the CNTFETs was dependent on the work function of the contact metal, which suggests that Fermi level pinning at the metal/nanotube interface is not strong. Based on the two-probe and four-probe resistance measurements, it has been shown that the carrier transport at the contact is explained by the edge contact model even in the diffusive regime. The chemical doping using F4TCNQ was effective in reducing not only the channel resistance but also the contact resistance. In the CNTFETs fabricated using plasma-enhanced (PE) CVD-grown nanotubes, the drain current of the most of the devices could be modulated by the gate voltage with small OFF current suggesting the preferential growth of the nanotubes with semiconducting behavior. Multichannel top-gate CNTFETs with horizontally-aligned nanotubes as channels have been successfully fabricated using CNT growth on the ST-cut quartz substrate, arc-discharge plasma deposition of the catalyst metal, and ALD gate insulator deposition. The devices show normally-on and n-type conduction property with a relatively-high ON current of 13 mA/mm. CNTFETs with nanotube network have also been fabricated by direct growth on the SiO2/Si substrate using grid-inserted PECVD and using catalyst formed on the channel area of the FETs. The uniformity of the electrical properties of the network channel CNTFETs were very good. Finally, it has been shown that the surface potential profile measurement based on the electrostatic force detection in the scanning probe microscopy was effective in studying the behavior of the CNTFETs such as the transient behavior and the effect of the defects.

  2. Separated Carbon Nanotube Macroelectronics for Active Matrix Organic Light-Emitting Diode Displays

    NASA Astrophysics Data System (ADS)

    Fu, Yue; Zhang, Jialu; Wang, Chuan; Chen, Pochiang; Zhou, Chongwu

    2012-02-01

    Active matrix organic light-emitting diode (AMOLED) display holds great potential for the next generation visual technologies due to its high light efficiency, flexibility, lightweight, and low-temperature processing. However, suitable thin-film transistors (TFTs) are required to realize the advantages of AMOLED. Pre-separated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose because of their excellent mobility, high percentage of semiconducting nanotubes, and room-temperature processing compatibility. Here we report, for the first time, the demonstration of AMOLED displays driven by separated nanotube thin-film transistors (SN-TFTs) including key technology components such as large-scale high-yield fabrication of devices with superior performance, carbon nanotube film density optimization, bilayer gate dielectric for improved substrate adhesion to the deposited nanotube film, and the demonstration of monolithically integrated AMOLED display elements with 500 pixels driven by 1000 SN-TFTs. Our approach can serve as the critical foundation for future nanotube-based thin-film display electronics.

  3. Strongly Anisotropic Ballistic Magnetoresistance in Compact Three-Dimensional Semiconducting Nanoarchitectures

    NASA Astrophysics Data System (ADS)

    Ortix, Carmine; Chang, Ching-Hao; van den Brink, Jeroen

    2015-03-01

    In this talk, I will show that in non-magnetic semiconducting bilayer or multilayer thin film systems rolled-up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which leads to a tunability of the number of one-dimensional magnetic subbands crossing the Fermi energy. The experimental significance of this phenomenon is illustrated by a sizable anisotropy that scales with the inverse of the number of windings, and persists up to a critical temperature that can be strongly enhanced by increasing the strength of the external magnetic field or the characteristic radius of curvature, and can reach room temperature. The financial support of the Future and Emerging Technologies (FET) programme within the Seventh Framework Programme for Research of the European Commission, under FET-Open Grant Number: 618083 (CNTQC), is gratefully acknowledged.

  4. Transport in Suspended Ultraclean Carbon Nanotube Double Dots

    NASA Astrophysics Data System (ADS)

    Pan, Cheng; Bockrath, Marc

    2014-03-01

    Using split gates, we modulate the charge density along the length of suspended ultraclean single-wall carbon nanotubes to produce pp , pn , np and nn configurations. With pn junctions present, the nanotubes act as a double quantum dot system. We perform transport experiments to investigate Kondo physics in this coupled tunable system. In polarized pp configurations, we observe conductance modulations that we attribute to backscattering induced by a potential step within the nanotube. We estimate the step spatial size from the electron wavelength cutoff of the scattering. We will discuss our latest results.

  5. Formation of in-situ CNT junction by direct lateral growth

    NASA Astrophysics Data System (ADS)

    Lee, Yun-Hi; Jang, Yoon-Taek; Choi, Chang-Hoon; Ju, Byeong-Kwon

    2003-03-01

    We present an approach to form a reliable integration of carbon nanotubes via direct parallel growth method. The method involves in-situ growth of carbon naotubes to bridge predefined junction electrodes of Nb/Co(or Ni), and furthermore, a high degree of ordering parallel suspended nanotubes can be obtained by applying DC bias during the growth. The arrays with robust contacts are unique system for explorations of collective behavior in coupled systems, and are useful for applications in nanoelectronics and NEMS.

  6. Doping-free fabrication of n-type random network single-walled carbon nanotube field effect transistor with yttrium contacts

    NASA Astrophysics Data System (ADS)

    Huang, Leihua; Chor, Eng Fong; Wu, Yihong

    2011-05-01

    This work reports the realization of high performance n-type random network single-walled carbon nanotube (rn-SWCNT) field effect transistor (FET) by means of contact engineering, where a low work function metal, Yttrium (Y), is used as the source and drain contacts. The presence of crossed metallic ( m-) and semiconducting ( s-) SWCNT junctions in the channel of rn-SWCNT FETs, which form p-type rectifying Schottky barrier, is believed to introduce non-negligible hole current in the fabricated FETs and lead to undesirable ambipolar characteristic. By means of soaking in 2,4,6-triphenylpyrylium tetrafluoroborate (2,4,6-TPPT), we have successfully converted the ambipolar rn-SWCNT FETs to highly unipolar n-type devices by selectively removing the m-SWCNTs in the FET channel. The best characteristics of our unipolar n-type rn-SWCNT FETs are as follows: on/off current ratio up to ∼10 5, mobility as high as 25 cm 2 V -1 s -1, and transconductance of 0.12 μS/μm; they have demonstrated air-stable n-type characteristics and are also more reproducibility than individual SWCNT FETs.

  7. The remote electron beam-induced current analysis of grain boundaries in semiconducting and semi-insulating materials.

    PubMed

    Holt, D B

    2000-01-01

    When no charge collecting p-n junction or Schottky barrier is present in the specimen, but two contacts are applied, conductive mode scanning electron microscope (SEM) observations known as remote electron beam-induced current (REBIC) can be made. It was described as "remote" EBIC because the contacts to the specimen can lie at macroscopic distances from the beam impact point. In recent years, REBIC has been found to be useful not only for studies of grain boundaries in semiconducting silicon and germanium, but also in semi-insulating materials such as the wider bandgap II-VI compounds and electroceramic materials like varistor ZnO and positive temperature coefficient resistor (PTCR) BaTiO3. The principles of this method are outlined. Accounts are given of the five forms of charge collection and resistive contrast that appear at grain boundaries (GBs) in REBIC micrographs. These are (1) terraced contrast due to high resistivity boundary layers, (2) peak and trough (PAT) contrast due to charge on the boundary, (3) reversible contrast seen only under external voltage bias due to the beta-conductive effect in a low conductivity boundary layer, (4) dark contrast due to enhanced recombination, and (5) bright contrast apparently due to reduced recombination. For comparison, the results of the extensive EBIC studies of GBs in Si and Ge are first outlined and then the results of recent REBIC grain boundary studies in both semiconducting and semi-insulating materials are reviewed.

  8. Nanotube cathodes.

    SciTech Connect

    Overmyer, Donald L.; Lockner, Thomas Ramsbeck; Siegal, Michael P.; Miller, Paul Albert

    2006-11-01

    Carbon nanotubes have shown promise for applications in many diverse areas of technology. In this report we describe our efforts to develop high-current cathodes from a variety of nanotubes deposited under a variety of conditions. Our goal was to develop a one-inch-diameter cathode capable of emitting 10 amperes of electron current for one second with an applied potential of 50 kV. This combination of current and pulse duration significantly exceeds previously reported nanotube-cathode performance. This project was planned for two years duration. In the first year, we tested the electron-emission characteristics of nanotube arrays fabricated under a variety of conditions. In the second year, we planned to select the best processing conditions, to fabricate larger cathode samples, and to test them on a high-power relativistic electron beam generator. In the first year, much effort was made to control nanotube arrays in terms of nanotube diameter and average spacing apart. When the project began, we believed that nanotubes approximately 10 nm in diameter would yield sufficient electron emission properties, based on the work of others in the field. Therefore, much of our focus was placed on measured field emission from such nanotubes grown on a variety of metallized surfaces and with varying average spacing between individual nanotubes. We easily reproduced the field emission properties typically measured by others from multi-wall carbon nanotube arrays. Interestingly, we did this without having the helpful vertical alignment to enhance emission; our nanotubes were randomly oriented. The good emission was most likely possible due to the improved crystallinity, and therefore, electrical conductivity, of our nanotubes compared to those in the literature. However, toward the end of the project, we learned that while these 10-nm-diameter CNTs had superior crystalline structure to the work of others studying field emission from multi-wall CNT arrays, these nanotubes still

  9. Vacuum template synthesis of multifunctional nanotubes with tailored nanostructured walls

    PubMed Central

    Filippin, A. Nicolas; Macias-Montero, Manuel; Saghi, Zineb; Idígoras, Jesús; Burdet, Pierre; Barranco, Angel; Midgley, Paul; Anta, Juan A.; Borras, Ana

    2016-01-01

    A three-step vacuum procedure for the fabrication of vertical TiO2 and ZnO nanotubes with three dimensional walls is presented. The method combines physical vapor deposition of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin films and layers and a post-annealing process in vacuum in order to remove the organic template. As a result, an ample variety of inorganic nanotubes are made with tunable length, hole dimensions and shapes and tailored wall composition, microstructure, porosity and structure. The fabrication of multishell nanotubes combining different semiconducting oxides and metal nanoparticles is as well explored. This method provides a feasible and reproducible route for the fabrication of high density arrays of vertically alligned nanotubes on processable substrates. The emptying mechanism and microstructure of the nanotubes have been elucidated through SEM, STEM, HAADF-STEM tomography and energy dispersive X-ray spectroscopy. In this article, as a proof of concept, it is presented the straightforward integration of ZnO nanotubes as photoanode in a photovoltaic cell and as a photonic oxygen gas sensor. PMID:26860367

  10. Vacuum template synthesis of multifunctional nanotubes with tailored nanostructured walls.

    PubMed

    Filippin, A Nicolas; Macias-Montero, Manuel; Saghi, Zineb; Idígoras, Jesús; Burdet, Pierre; Barranco, Angel; Midgley, Paul; Anta, Juan A; Borras, Ana

    2016-02-10

    A three-step vacuum procedure for the fabrication of vertical TiO2 and ZnO nanotubes with three dimensional walls is presented. The method combines physical vapor deposition of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin films and layers and a post-annealing process in vacuum in order to remove the organic template. As a result, an ample variety of inorganic nanotubes are made with tunable length, hole dimensions and shapes and tailored wall composition, microstructure, porosity and structure. The fabrication of multishell nanotubes combining different semiconducting oxides and metal nanoparticles is as well explored. This method provides a feasible and reproducible route for the fabrication of high density arrays of vertically alligned nanotubes on processable substrates. The emptying mechanism and microstructure of the nanotubes have been elucidated through SEM, STEM, HAADF-STEM tomography and energy dispersive X-ray spectroscopy. In this article, as a proof of concept, it is presented the straightforward integration of ZnO nanotubes as photoanode in a photovoltaic cell and as a photonic oxygen gas sensor.

  11. Vacuum template synthesis of multifunctional nanotubes with tailored nanostructured walls

    NASA Astrophysics Data System (ADS)

    Filippin, A. Nicolas; Macias-Montero, Manuel; Saghi, Zineb; Idígoras, Jesús; Burdet, Pierre; Barranco, Angel; Midgley, Paul; Anta, Juan A.; Borras, Ana

    2016-02-01

    A three-step vacuum procedure for the fabrication of vertical TiO2 and ZnO nanotubes with three dimensional walls is presented. The method combines physical vapor deposition of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin films and layers and a post-annealing process in vacuum in order to remove the organic template. As a result, an ample variety of inorganic nanotubes are made with tunable length, hole dimensions and shapes and tailored wall composition, microstructure, porosity and structure. The fabrication of multishell nanotubes combining different semiconducting oxides and metal nanoparticles is as well explored. This method provides a feasible and reproducible route for the fabrication of high density arrays of vertically alligned nanotubes on processable substrates. The emptying mechanism and microstructure of the nanotubes have been elucidated through SEM, STEM, HAADF-STEM tomography and energy dispersive X-ray spectroscopy. In this article, as a proof of concept, it is presented the straightforward integration of ZnO nanotubes as photoanode in a photovoltaic cell and as a photonic oxygen gas sensor.

  12. Vacuum template synthesis of multifunctional nanotubes with tailored nanostructured walls.

    PubMed

    Filippin, A Nicolas; Macias-Montero, Manuel; Saghi, Zineb; Idígoras, Jesús; Burdet, Pierre; Barranco, Angel; Midgley, Paul; Anta, Juan A; Borras, Ana

    2016-01-01

    A three-step vacuum procedure for the fabrication of vertical TiO2 and ZnO nanotubes with three dimensional walls is presented. The method combines physical vapor deposition of small-molecules, plasma enhanced chemical vapor deposition of inorganic functional thin films and layers and a post-annealing process in vacuum in order to remove the organic template. As a result, an ample variety of inorganic nanotubes are made with tunable length, hole dimensions and shapes and tailored wall composition, microstructure, porosity and structure. The fabrication of multishell nanotubes combining different semiconducting oxides and metal nanoparticles is as well explored. This method provides a feasible and reproducible route for the fabrication of high density arrays of vertically alligned nanotubes on processable substrates. The emptying mechanism and microstructure of the nanotubes have been elucidated through SEM, STEM, HAADF-STEM tomography and energy dispersive X-ray spectroscopy. In this article, as a proof of concept, it is presented the straightforward integration of ZnO nanotubes as photoanode in a photovoltaic cell and as a photonic oxygen gas sensor. PMID:26860367

  13. Quantum conductance of carbon nanotubes with defects

    SciTech Connect

    Chico, L.; Benedict, L.X.; Louie, S.G.; Cohen, M.L. |

    1996-07-01

    We study the conductance of metallic carbon nanotubes with vacancies and pentagon-heptagon pair defects within the Landauer formalism. Using a tight-binding model and a Green{close_quote}s function technique to calculate the scattering matrix, we examine the one-dimensional to two-dimensional crossover in these systems and show the existence of metallic tube junctions in which the conductance is suppressed for symmetry reasons. {copyright} {ital 1996 The American Physical Society.}

  14. Formation of geometrically complex lipid nanotube-vesicle networks of higher-order topologies

    PubMed Central

    Karlsson, Mattias; Sott, Kristin; Davidson, Maximillian; Cans, Ann-Sofie; Linderholm, Pontus; Chiu, Daniel; Orwar, Owe

    2002-01-01

    We present a microelectrofusion method for construction of fluid-state lipid bilayer networks of high geometrical complexity up to fully connected networks with genus = 3 topology. Within networks, self-organizing branching nanotube architectures could be produced where intersections spontaneously arrange themselves into three-way junctions with an angle of 120° between each nanotube. Formation of branching nanotube networks appears to follow a minimum-bending energy algorithm that solves for pathway minimization. It is also demonstrated that materials can be injected into specific containers within a network by nanotube-mediated transport of satellite vesicles having defined contents. Using a combination of microelectrofusion, spontaneous nanotube pattern formation, and satellite-vesicle injection, complex networks of containers and nanotubes can be produced for a range of applications in, for example, nanofluidics and artificial cell design. In addition, this electrofusion method allows integration of biological cells into lipid nanotube-vesicle networks. PMID:12185244

  15. Optoelectronic properties of Mg{sub 2}Si semiconducting layers with high absorption coefficients

    SciTech Connect

    Kato, Takashi; Sago, Yuichiro; Fujiwara, Hiroyuki

    2011-09-15

    In an attempt to develop a low-cost material for solar cell devices, polycrystalline magnesium silicide (poly-Mg{sub 2}Si) semiconducting layers have been prepared by applying rf magnetron sputtering using a Mg{sub 2}Si target. The optimum substrate temperature for the poly-Mg{sub 2}Si growth was found to be T{sub s} = 200 deg. C; the film deposition at higher temperatures leads to desorption of Mg atoms from the growing surface, while the amorphous phase formation occurs at room temperature. The poly-Mg{sub 2}Si layer deposited at T{sub s} = 200 deg. C shows the (111) preferential orientation with a uniform grain size of {approx}50 nm. The dielectric function of the poly-Mg{sub 2}Si layer has been determined accurately by spectroscopic ellipsometry. From the analysis, quite high absorption coefficients and an indirect gap of 0.77 eV in the poly-Mg{sub 2}Si layer have been confirmed. The above poly-Mg{sub 2}Si layer shows clear photoconductivity and can be applied as a narrow-gap bottom layer in multi-junction solar cell devices.

  16. Transport properties in semiconducting NbS{sub 2} nanoflakes

    SciTech Connect

    Huang, Y. H.; Chen, R. S. Ho, C. H.; Peng, C. C.; Huang, Y. S.

    2014-09-01

    The electronic transport properties in individual niobium disulphide (NbS{sub 2}) nanoflakes mechanically exfoliated from the bulk crystal with three rhombohedral (3R) structure grown by chemical vapor transport were investigated. It is found that the conductivity values of the single-crystalline nanoflakes are approximately two orders of magnitude lower than that of their bulk counterparts. Temperature-dependent conductivity measurements show that the 3R-NbS{sub 2} nanoflakes exhibit semiconducting transport behavior, which is also different from the metallic character in the bulk crystals. In addition, the noncontinuous conductivity variations were observed at the temperature below 180 K for both the nanoflakes and the bulks, which is attributed to the probable charge density wave transition. The photoconductivities in the semiconducting nanoflakes were also observed under the excitation at 532 nm wavelength. The probable mechanisms resulting in the different transport behaviors between the NbS{sub 2} nanostructure and bulk were discussed.

  17. An alternative approach to charge transport in semiconducting electrodes

    NASA Technical Reports Server (NTRS)

    Thomchick, J.; Buoncristiani, A. M.

    1980-01-01

    The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

  18. Morphology control in biphasic hybrid systems of semiconducting materials.

    PubMed

    Mathias, Florian; Fokina, Ana; Landfester, Katharina; Tremel, Wolfgang; Schmid, Friederike; Char, Kookheon; Zentel, Rudolf

    2015-06-01

    Simple blends of inorganic nanocrystals and organic (semiconducting) polymers usually lead to macroscopic segregation. Thus, such blends typically exhibit inferior properties than expected. To overcome the problem of segregation, polymer coated nanocrystals (nanocomposites) have been developed. Such nanocomposites are highly miscible within the polymer matrix. In this Review, a summary of synthetic approaches to achieve stable nanocomposites in a semiconducting polymer matrix is presented. Furthermore, a theoretical background as well as an overview concerning morphology control of inorganic NCs in polymer matrices are provided. In addition, the morphologic behavior of highly anisotropic nanoparticles (i.e. liquid crystalline phase formation of nanorod-composites) and branched nanoparticles (spatial orientation of tetrapods) is described. Finally, the morphology requirements for the application of inorganic/organic hybrid systems in light emitting diodes and solar cells are discussed, and potential solutions to achieve the required morphologies are provided. PMID:25737161

  19. Nanotube phonon waveguide

    DOEpatents

    Chang, Chih-Wei; Zettl, Alexander K.

    2013-10-29

    Disclosed are methods and devices in which certain types of nanotubes (e.g., carbon nanotubes and boron nitride nanotubes conduct heat with high efficiency and are therefore useful in electronic-type devices.

  20. Three-junction solar cell

    DOEpatents

    Ludowise, Michael J.

    1986-01-01

    A photovoltaic solar cell is formed in a monolithic semiconductor. The cell contains three junctions. In sequence from the light-entering face, the junctions have a high, a medium, and a low energy gap. The lower junctions are connected in series by one or more metallic members connecting the top of the lower junction through apertures to the bottom of the middle junction. The upper junction is connected in voltage opposition to the lower and middle junctions by second metallic electrodes deposited in holes 60 through the upper junction. The second electrodes are connected to an external terminal.

  1. Periodically striped films produced from super-aligned carbon nanotube arrays.

    PubMed

    Liu, Kai; Sun, Yinghui; Liu, Peng; Wang, Jiaping; Li, Qunqing; Fan, Shoushan; Jiang, Kaili

    2009-08-19

    We report a novel way to draw films from super-aligned carbon nanotube arrays at large drawing angles. The obtained super-aligned carbon nanotube films have a periodically striped configuration with alternating thinner and thicker film sections, and the width of the stripes is equal to the height of the original arrays. Compared with ordinary uniform films, the striped films provide a better platform for understanding the mechanism of spinning films from arrays because carbon nanotube junctions are easily observed and identified at the boundary of the stripes. Further studies show that the carbon nanotube junctions are bottleneck positions for thermal conduction and mechanical strength of the film, but do not limit its electrical conduction. These films can be utilized as striped and high-degree polarized light emission sources. Our results will be valuable for new applications and future large-scale production of tunable super-aligned carbon nanotube films. PMID:19636102

  2. Chirality Characterization of Dispersed Single Wall Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Namkung, Min; Williams, Phillip A.; Mayweather, Candis D.; Wincheski, Buzz; Park, Cheol; Namkung, Juock S.

    2005-01-01

    Raman scattering and optical absorption spectroscopy are used for the chirality characterization of HiPco single wall carbon nanotubes (SWNTs) dispersed in aqueous solution with the surfactant sodium dodecylbenzene sulfonate. Radial breathing mode (RBM) Raman peaks for semiconducting and metallic SWNTs are identified by directly comparing the Raman spectra with the Kataura plot. The SWNT diameters are calculated from these resonant peak positions. Next, a list of (n, m) pairs, yielding the SWNT diameters within a few percent of that obtained from each resonant peak position, is established. The interband transition energies for the list of SWNT (n, m) pairs are calculated based on the tight binding energy expression for each list of the (n, m) pairs, and the pairs yielding the closest values to the corresponding experimental optical absorption peaks are selected. The results reveal that (1, 11), (4, 11), and (0, 11) as the most probable chiralities of the semiconducting nanotubes. The results also reveal that (4, 16), (6, 12) and (8, 8) are the most probable chiralities for the metallic nanotubes. Directly relating the Raman scattering data to the optical absorption spectra, the present method is considered the simplest technique currently available. Another advantage of this technique is the use of the E(sup 8)(sub 11) peaks in the optical absorption spectrum in the analysis to enhance the accuracy in the results.

  3. Spin Dependent Transport Properties of Metallic and Semiconducting Nanostructures

    NASA Astrophysics Data System (ADS)

    Sapkota, Keshab R.

    Present computing and communication devices rely on two different classes of technologies; information processing devices are based on electrical charge transport in semiconducting materials while information storage devices are based on orientation of electron spins in magnetic materials. A realization of a hybrid-type device that is based on charge as well as spin properties of electrons would perform both of these actions thereby enhancing computation power to many folds and reducing power consumptions. This dissertation focuses on the fabrication of such spin-devices based on metallic and semiconducting nanostructures which can utilize spin as well as charge properties of electrons. A simplified design of the spin-device consists of a spin injector, a semiconducting or metallic channel, and a spin detector. The channel is the carrier of the spin signal from the injector to the detector and therefore plays a crucial role in the manipulation of spin properties in the device. In this work, nanostructures like nanowires and nanostripes are used to function the channel in the spin-device. Methods like electrospinning, hydrothermal, and wet chemical were used to synthesize nanowires while physical vapor deposition followed by heat treatment in controlled environment was used to synthesis nanostripes. Spin-devices fabrication of the synthesized nanostructures were carried out by electron beam lithography process. The details of synthesis of nanostructures, device fabrication procedures and measurement techniques will be discussed in the thesis. We have successfully fabricated the spin-devices of tellurium nanowire, indium nanostripe, and indium oxide nanostripe and studied their spin transport properties for the first time. These spin-devices show large spin relaxation length compared to normal metals like copper and offer potentials for the future technologies. Further, Heusler alloys nanowires like nanowires of Co 2FeAl were synthesized and studied for electrical

  4. Nanotube News

    ERIC Educational Resources Information Center

    Journal of College Science Teaching, 2005

    2005-01-01

    Smaller, faster computers, bullet-proof t-shirts, and itty-bitty robots--such are the promises of nanotechnology and the cylinder-shaped collection of carbon molecules known as nanotubes. But for these exciting ideas to become realities, scientists must understand how these miracle molecules perform under all sorts of conditions. This brief…

  5. Peptide nanotubes.

    PubMed

    Hamley, Ian W

    2014-07-01

    The self-assembly of different classes of peptide, including cyclic peptides, amyloid peptides and surfactant-like peptides into nanotube structures is reviewed. The modes of self-assembly are discussed. Additionally, applications in bionanotechnology and synthetic materials science are summarized.

  6. Photoluminescence imaging of electronic-impurity-induced exciton quenching in single-walled carbon nanotubes.

    PubMed

    Crochet, Jared J; Duque, Juan G; Werner, James H; Doorn, Stephen K

    2012-02-01

    The electronic properties of single-walled carbon nanotubes can be altered by surface adsorption of electronic impurities or dopants. However, fully understanding the influence of these impurities is difficult because of the inherent complexity of the solution-based colloidal chemistry of nanotubes, and because of a lack of techniques for directly imaging dynamic processes involving these impurities. Here, we show that photoluminescence microscopy can be used to image exciton quenching in semiconducting single-walled carbon nanotubes during the early stages of chemical doping with two different species. The addition of AuCl(3) leads to localized exciton-quenching sites, which are attributed to a mid-gap electronic impurity level, and the adsorbed species are also found sometimes to be mobile on the surface of the nanotubes. The addition of H(2)O(2) leads to delocalized exciton-quenching hole states, which are responsible for long-range photoluminescence blinking, and are also mobile.

  7. Effect of UV irradiation on the dynamics of oxygen and water interaction with carbon nanotubes

    SciTech Connect

    Nelson, Anthony J; Ivanov, Ilia N

    2016-01-01

    Carbon nanotube (CNT) films composed of semiconducting single wall nanotubes (s-SWNTs), metallic single wall nanotubes (m-SWNTs), and multiwall nanotubes (MWNTs) were exposed to O2 and H2O vapor in the dark and under UV irradiation. Changes in the film conductivity and mass were measured in situ. We find that UV irradiation increases the resistive response of CNT films to O2 and H2O by more than an order of magnitude. In m-SWNT and MWNT films, UV irradiation changes the sign of the resistive response to O2 and H2O by generating free charge carriers. S-SWNTs show the largest UV-induced resistive response and exhibit weakening of van der Waals interactions with the QCM crystal when exposed to gas/vapor.

  8. Selective breakdown of metallic pathways in double-walled carbon nanotube networks.

    PubMed

    Ng, Allen L; Sun, Yong; Powell, Lyndsey; Sun, Chuan-Fu; Chen, Chien-Fu; Lee, Cheng S; Wang, YuHuang

    2015-01-01

    Covalently functionalized, semiconducting double-walled carbon nanotubes exhibit remarkable properties and can outperform their single-walled carbon nanotube counterparts. In order to harness their potential for electronic applications, metallic double-walled carbon nanotubes must be separated from the semiconductors. However, the inner wall is inaccessible to current separation techniques which rely on the surface properties. Here, the first approach to address this challenge through electrical breakdown of metallic double-walled carbon nanotubes, both inner and outer walls, within networks of mixed electronic types is described. The intact semiconductors demonstrate a ∼62% retention of the ON-state conductance in thin film transistors in response to covalent functionalization. The selective elimination of the metallic pathways improves the ON/OFF ratio, by more than 360 times, to as high as 40 700, while simultaneously retaining high ON-state conductance.

  9. Effect of UV irradiation on adsorption/desorption of oxygen and water on carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Muckley, Eric S.; Nelson, Anthony J.; Jacobs, Christopher B.; Ivanov, Ilia N.

    2016-02-01

    Carbon nanotube (CNT) films composed of semiconducting single wall nanotubes (s-SWNTs), metallic single wall nanotubes (m-SWNTs), and multiwall nanotubes (MWNTs) were exposed to O2 and H2O vapor in the dark and under UV irradiation. Changes in the film conductivity and mass were measured in situ. We find that UV irradiation increases the resistive response of CNT films to O2 and H2O by more than an order of magnitude. In m-SWNT and MWNT films, UV irradiation changes the sign of the resistive response to O2 and H2O by generating free charge carriers. S-SWNTs show the largest UV-induced resistive response and exhibit weakening of van der Waals interactions with the QCM crystal when exposed to gas/vapor.

  10. Thermoelectric properties of single-wall carbon nanotube films: Effects of diameter and wet environment

    NASA Astrophysics Data System (ADS)

    Hayashi, Daisuke; Ueda, Tomohiro; Nakai, Yusuke; Kyakuno, Haruka; Miyata, Yasumitsu; Yamamoto, Takahiro; Saito, Takeshi; Hata, Kenji; Maniwa, Yutaka

    2016-02-01

    The Seebeck coefficient S and the electrical resistivity ρ of single-wall carbon nanotube (SWCNT) films were investigated as a function of the SWCNT diameter and carrier concentration. The S and ρ significantly changed in humid environments through p-type carrier doping. Experiments, combined with theoretical simulations based on the non-equilibrium Green’s function theory, indicated that the power factor P can be increased threefold by the enrichment of semiconducting SWCNTs, but the nanotube diameter has little effect. The improvement of the film resistivity strongly enhances the film thermoelectric performance, manifested as increasing the value of P above 1200 µW/(m·K2).

  11. Identification of nitrogen dopants in single-walled carbon nanotubes by scanning tunneling microscopy.

    PubMed

    Tison, Yann; Lin, Hong; Lagoute, Jérôme; Repain, Vincent; Chacon, Cyril; Girard, Yann; Rousset, Sylvie; Henrard, Luc; Zheng, Bing; Susi, Toma; Kauppinen, Esko I; Ducastelle, François; Loiseau, Annick

    2013-08-27

    Using scanning tunnelling microscopy and spectroscopy, we investigated the atomic and electronic structure of nitrogen-doped single walled carbon nanotubes synthesized by chemical vapor deposition. The insertion of nitrogen in the carbon lattice induces several types of point defects involving different atomic configurations. Spectroscopic measurements on semiconducting nanotubes reveal that these local structures can induce either extended shallow levels or more localized deep levels. In a metallic tube, a single doping site associated with a donor state was observed in the gap at an energy close to that of the first van Hove singularity. Density functional theory calculations reveal that this feature corresponds to a substitutional nitrogen atom in the carbon network.

  12. Ab-initio study of structural, mechanical and electronic properties of functionalized carbon nanotubes

    SciTech Connect

    Milowska, Karolina Z.; Birowska, Magdalena; Majewski, Jacek A.

    2013-12-04

    We present exemplary results of extensive studies of structural, mechanical and electronic properties of covalent functionalization of carbon nanotubes (CNTs). We report new results for metallic (9,0), and semiconducting (10,0) single-wall carbon nanotubes (CNT) functionalized with -COOH, -OH, and both groups with concentration up to 12.5%. Our studies are performed in the framework of the density functional theory (DFT). We discuss here the stability, local and global changes in structure, elastic moduli (Young's, Shear, and Bulk), electronic structure and resulting band gaps, as a function of the density of the adsorbed molecules.

  13. Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors.

    PubMed

    Chen, Yung-Fu; Fuhrer, Michael S

    2006-09-01

    Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.

  14. Ultrafast nonlinear photoresponse of single-wall carbon nanotubes: a broadband degenerate investigation

    NASA Astrophysics Data System (ADS)

    Xu, Shuo; Wang, Fengqiu; Zhu, Chunhui; Meng, Yafei; Liu, Yujie; Liu, Wenqing; Tang, Jingyi; Liu, Kaihui; Hu, Guohua; Howe, Richard C. T.; Hasan, Tawfique; Zhang, Rong; Shi, Yi; Xu, Yongbing

    2016-04-01

    Understanding of the fundamental photoresponse of carbon nanotubes has broad implications for various photonic and optoelectronic devices. Here, Z-scan and pump-probe spectroscopy performed across 600-2400 nm were combined to give a broadband `degenerate' mapping of the nonlinear absorption properties of single-wall carbon nanotubes (SWNTs). In contrast to the views obtained from non-degenerate techniques, sizable saturable absorption is observed from the visible to the near-infrared range, including the spectral regions between semiconducting excitonic peaks and metallic tube transitions. In addition, the broadband mapping unambiguously reveals a photobleaching to photoinduced absorption transition feature within the first semiconducting excitonic band ~2100 nm, quantitatively marking the long-wavelength cut-off for saturable absorption of the SWNTs investigated. Our findings present a much clearer physical picture of SWNTs' nonlinear absorption characteristics, and help provide updated design guidelines for SWNT based nonlinear optical devices.Understanding of the fundamental photoresponse of carbon nanotubes has broad implications for various photonic and optoelectronic devices. Here, Z-scan and pump-probe spectroscopy performed across 600-2400 nm were combined to give a broadband `degenerate' mapping of the nonlinear absorption properties of single-wall carbon nanotubes (SWNTs). In contrast to the views obtained from non-degenerate techniques, sizable saturable absorption is observed from the visible to the near-infrared range, including the spectral regions between semiconducting excitonic peaks and metallic tube transitions. In addition, the broadband mapping unambiguously reveals a photobleaching to photoinduced absorption transition feature within the first semiconducting excitonic band ~2100 nm, quantitatively marking the long-wavelength cut-off for saturable absorption of the SWNTs investigated. Our findings present a much clearer physical picture of

  15. Intense photoluminescence from dried double-stranded DNA and single-walled carbon nanotube hybrid

    SciTech Connect

    Ito, M.; Kobayashi, T.; Ito, Y.; Hayashida, T.; Nii, D.; Umemura, K.; Homma, Y.

    2014-01-27

    Semiconducting single-walled carbon nanotubes (SWNTs) show near-infrared photoluminescence (PL) when they are individually isolated. This was an obstacle to use photonic properties of SWNTs on a solid surface. We show that SWNTs wrapped with DNA maintain intense PL under the dry conditions. SWNTs are well isolated individually by DNA even when the DNA-SWNT hybrids are agglomerated. This finding opens up application of SWNTs to photonic devices.

  16. Graphene nanoribbons production from flat carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Melo, W. S.; Guerini, S.; Diniz, E. M.

    2015-11-01

    Graphene nanoribbons are of great interest for pure and applied sciences due to their unique properties which depend on the nanoribbon edges, as, for example, energy gap and antiferromagnetic coupling. Nevertheless, the synthesis of nanoribbons with well-defined edges remains a challenge. To collaborate with this subject, here we propose a new route for the production of graphene nanoribbons from flat carbon nanotubes filled with a one-dimensional chain of Fe atoms by first principles calculations based on density functional theory. Our results show that Fe-filled flat carbon nanotubes are energetically more stable than non flattened geometries. Also we find that by hydrogenation or oxygenation of the most curved region of the Fe-filled flat armchair carbon nanotube, it occurred a spontaneous production of zigzag graphene nanoribbons which have metallic or semiconducting behavior depending on the edge and size of the graphene nanoribbon. Such findings can be used to create a new method of synthesis of regular-edge carbon nanoribbons.

  17. Graphene nanoribbons production from flat carbon nanotubes

    SciTech Connect

    Melo, W. S.; Guerini, S.; Diniz, E. M.

    2015-11-14

    Graphene nanoribbons are of great interest for pure and applied sciences due to their unique properties which depend on the nanoribbon edges, as, for example, energy gap and antiferromagnetic coupling. Nevertheless, the synthesis of nanoribbons with well-defined edges remains a challenge. To collaborate with this subject, here we propose a new route for the production of graphene nanoribbons from flat carbon nanotubes filled with a one-dimensional chain of Fe atoms by first principles calculations based on density functional theory. Our results show that Fe-filled flat carbon nanotubes are energetically more stable than non flattened geometries. Also we find that by hydrogenation or oxygenation of the most curved region of the Fe-filled flat armchair carbon nanotube, it occurred a spontaneous production of zigzag graphene nanoribbons which have metallic or semiconducting behavior depending on the edge and size of the graphene nanoribbon. Such findings can be used to create a new method of synthesis of regular-edge carbon nanoribbons.

  18. Single Particle Transport Through Carbon Nanotube Wires: Effect of Defects and Polyhedral Cap

    NASA Technical Reports Server (NTRS)

    Anantram, M. P.; Govidan, T. R.

    1999-01-01

    The ability to manipulate carbon nanotubes with increasing precision has enabled a large number of successful electron transport experiments. These studies have primarily focussed on characterizing transport through both metallic and semiconducting wires. Tans et al. demonstrated ballistic transport in single-wall nanotubes for the first time, although the experimental configuration incurred large contact resistance. Subsequently, methods of producing low contact resistances have been developed and two terminal conductances smaller than 50 k-ohms have been repeatably demonstrated in single-wall and multi-wall nanotubes. In multi-wall nanotubes, Frank et al. demonstrated a resistance of approximately h/2e(exp 2) in a configuration where the outermost layer made contact to a liquid metal. This was followed by the work of de Pablo et al. where a resistance of h(bar)/27e(exp 2) (approximately 478 ohms) was measured in a configuration where electrical contact was made to many layers of a multi-wall nanotube. Frank et al. and Pablo et al. note that each conducting layer contributes a conductance of only 2e(exp 2)/h, instead of the 4e(exp 2)/h that a single particle mode counting picture yields. These small resistances have been obtained in microns long nanotubes, making them the best conducting molecular wires to date. The large conductance of nanotube wires stems from the fact that the crossing bands of nanotubes are robust to defect scattering.

  19. Optics and Optoelectronics of Two-dimensional Semiconducting Monolayers and Heterostructures

    NASA Astrophysics Data System (ADS)

    Ross, Jason Solomon

    Until recently, the physics of truly two-dimensional (2D) excitons could only be explored theoretically. Following the discovery of graphene, many 2D materials were quickly identified and isolated, one system being the semiconducting Group VI-B transition metal dichalcogenides (TMDs). These semiconductors are the first air-stable materials that are atomically thin (three atomics thick), and yet can be produced in arbitrarily large lateral sheets. They have a direct band gap in which confinement leads to large spatial overlap of electrons and holes resulting in strongly coupled excitonic transitions that dominate light-matter interactions. The direct band-gap of monolayer TMDs occurs at the corners of the hexagonal Brillouin zone, referred to as the K valleys. Entirely unique to these materials, excitons in adjacent K valleys selectively couple to light of opposite circular polarization, i.e. the K (K') valley is selective to right (left) circularly polarized photons. This property offers the possible realization of novel devices that will manipulate the valley index, known as valleytronics. Further, creating a stacked heterostructure (HS) of two TMD monolayers of different molecular species can exhibit type-II band alignment leading to the first atomically sharp built-in p-n junction and a bright interlayer exciton with long lifetimes. Being flat 2D sheets, it is easy to couple these materials to nearby systems such as microfabricated electrodes and photonic crystal cavities allowing for unique modulation and device schemes. Here, I employ both optical and electronic techniques to study the unique physics of 2D excitons in TMDs as well as demonstrate some of their first optoelectronic and valleytronic devices. The most notable achievement is perhaps the first demonstrations of both atomically thin and 2D heterostructure light emitting diodes and photovoltaic devices. Other breakthroughs include the first demonstration of exciton charging tunability in a 2D system

  20. Mechanism of amperometric biosensor with electronic-type-controlled carbon nanotube

    NASA Astrophysics Data System (ADS)

    Hidaka, Hiroki; Nowaki, Kohei; Muguruma, Hitoshi

    2016-03-01

    An amperometric enzyme biosensor with electronic-type-controlled (metallic and semiconducting) single-walled carbon nanotubes (CNTs) is presented. In this research, we investigate how the electronic types of CNTs influence the amperometric response of enzyme biosensors and what their working mechanisms are. The biosensor of interest is for glucose detection using enzyme glucose oxidase (GOD). In the presence of oxygen, the response of a metallic CNT-GOD electrode was 2.5 times more sensitive than that of a semiconducting CNT-GOD electrode. In contrast, in the absence of oxygen, the response of the semiconducting CNT-GOD electrode was retained, whereas that of the metallic CNT-GOD electrode was significantly reduced. This indicates that direct electron transfer occurred with the semiconducting CNT-GOD electrode, whereas the metallic CNT-GOD electrode was dominated by a hydrogen peroxide pathway caused by an enzymatic reaction. Electrochemical impedance spectroscopy was used to show that the semiconducting CNT network has less resistance for electron transfer than the metallic CNT network. The optimized glucose biosensor revealed a sensitivity of 5.6 µA mM-1 cm-2 at +0.6 V vs Ag/AgCl, a linear dynamic range of 0.025-1.4 mM, and a response time of 8 s.

  1. Spin glass in semiconducting KFe1.05Ag0.88Te2 single crystals

    DOE PAGES

    Ryu, H.; Lei, H.; Klobes, B.; Warren, J. B.; Hermann, R. P.; Petrovic, C.

    2015-05-26

    We report discovery of KFe1.05Ag0.88Te2 single crystals with semiconducting spin glass ground state. Composition and structure analysis suggest nearly stoichiometric I4/mmm space group but allow for the existence of vacancies, absent in long range semiconducting antiferromagnet KFe1.05Ag0.88Te2. The subtle change in stoichometry in Fe/Ag sublattice changes magnetic ground state but not conductivity, giving further insight into the semiconducting gap mechanism.

  2. Electronically type-sorted carbon nanotube-based electrochemical biosensors with glucose oxidase and dehydrogenase.

    PubMed

    Muguruma, Hitoshi; Hoshino, Tatsuya; Nowaki, Kohei

    2015-01-14

    An electrochemical enzyme biosensor with electronically type-sorted (metallic and semiconducting) single-walled carbon nanotubes (SWNTs) for use in aqueous media is presented. This research investigates how the electronic types of SWNTs influence the amperometric response of enzyme biosensors. To conduct a clear evaluation, a simple layer-by-layer process based on a plasma-polymerized nano thin film (PPF) was adopted because a PPF is an inactive matrix that can form a well-defined nanostructure composed of SWNTs and enzyme. For a biosensor with the glucose oxidase (GOx) enzyme in the presence of oxygen, the response of a metallic SWNT-GOx electrode was 2 times larger than that of a semiconducting SWNT-GOx electrode. In contrast, in the absence of oxygen, the response of the semiconducting SWNT-GOx electrode was retained, whereas that of the metallic SWNT-GOx electrode was significantly reduced. This indicates that direct electron transfer occurred with the semiconducting SWNT-GOx electrode, whereas the metallic SWNT-GOx electrode was dominated by a hydrogen peroxide pathway caused by an enzymatic reaction. For a biosensor with the glucose dehydrogenase (GDH; oxygen-independent catalysis) enzyme, the response of the semiconducting SWNT-GDH electrode was 4 times larger than that of the metallic SWNT-GDH electrode. Electrochemical impedance spectroscopy was used to show that the semiconducting SWNT network has less resistance for electron transfer than the metallic SWNT network. Therefore, it was concluded that semiconducting SWNTs are more suitable than metallic SWNTs for electrochemical enzyme biosensors in terms of direct electron transfer as a detection mechanism. This study makes a valuable contribution toward the development of electrochemical biosensors that employ sorted SWNTs and various enzymes. PMID:25522366

  3. Electronically type-sorted carbon nanotube-based electrochemical biosensors with glucose oxidase and dehydrogenase.

    PubMed

    Muguruma, Hitoshi; Hoshino, Tatsuya; Nowaki, Kohei

    2015-01-14

    An electrochemical enzyme biosensor with electronically type-sorted (metallic and semiconducting) single-walled carbon nanotubes (SWNTs) for use in aqueous media is presented. This research investigates how the electronic types of SWNTs influence the amperometric response of enzyme biosensors. To conduct a clear evaluation, a simple layer-by-layer process based on a plasma-polymerized nano thin film (PPF) was adopted because a PPF is an inactive matrix that can form a well-defined nanostructure composed of SWNTs and enzyme. For a biosensor with the glucose oxidase (GOx) enzyme in the presence of oxygen, the response of a metallic SWNT-GOx electrode was 2 times larger than that of a semiconducting SWNT-GOx electrode. In contrast, in the absence of oxygen, the response of the semiconducting SWNT-GOx electrode was retained, whereas that of the metallic SWNT-GOx electrode was significantly reduced. This indicates that direct electron transfer occurred with the semiconducting SWNT-GOx electrode, whereas the metallic SWNT-GOx electrode was dominated by a hydrogen peroxide pathway caused by an enzymatic reaction. For a biosensor with the glucose dehydrogenase (GDH; oxygen-independent catalysis) enzyme, the response of the semiconducting SWNT-GDH electrode was 4 times larger than that of the metallic SWNT-GDH electrode. Electrochemical impedance spectroscopy was used to show that the semiconducting SWNT network has less resistance for electron transfer than the metallic SWNT network. Therefore, it was concluded that semiconducting SWNTs are more suitable than metallic SWNTs for electrochemical enzyme biosensors in terms of direct electron transfer as a detection mechanism. This study makes a valuable contribution toward the development of electrochemical biosensors that employ sorted SWNTs and various enzymes.

  4. Equivalent Josephson junctions

    NASA Astrophysics Data System (ADS)

    Boyadjiev, T. L.; Semerdjieva, E. G.; Shukrinov, Yu. M.

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt-or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is adequate to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flow. This fact may explain the improvement of the spectra of microwave radiation noted in the literature.

  5. Carbon nanotubes for biomedical imaging: the recent advances.

    PubMed

    Gong, Hua; Peng, Rui; Liu, Zhuang

    2013-12-01

    This article reviews the latest progresses regarding the applications of carbon nanotubes (CNTs), including single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs), as multifunctional nano-probes for biomedical imaging. Utilizing the intrinsic band-gap fluorescence of semi-conducting single-walled carbon nanotubes (SWNTs), fluorescence imaging in the near infrared II (NIR-II) region with enhanced tissue penetration and spatial resolution has shown great promise in recent years. Raman imaging based on the resonance Raman scattering of SWNTs has also been explored by a number of groups for in vitro and in vivo imaging of biological samples. The strong absorbance of CNTs in the NIR region can be used for photoacoustic imaging, and their photoacoustic signals can be dramatically enhanced by adding organic dyes, or coating with gold shells. Taking advantages of metal nanoparticle impurities attached to nanotubes, CNTs can also serve as a T2-contrast agent in magnetic resonance (MR) imaging. In addition, when labeled with radioactive isotopes, many groups have developed nuclear imaging with functionalized CNTs. Therefore CNTs are unique imaging probes with great potential in biomedical multimodal imaging.

  6. Physically unclonable cryptographic primitives using self-assembled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Hu, Zhaoying; Comeras, Jose Miguel M. Lobez; Park, Hongsik; Tang, Jianshi; Afzali, Ali; Tulevski, George S.; Hannon, James B.; Liehr, Michael; Han, Shu-Jen

    2016-06-01

    Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size.

  7. Physically unclonable cryptographic primitives using self-assembled carbon nanotubes.

    PubMed

    Hu, Zhaoying; Comeras, Jose Miguel M Lobez; Park, Hongsik; Tang, Jianshi; Afzali, Ali; Tulevski, George S; Hannon, James B; Liehr, Michael; Han, Shu-Jen

    2016-06-01

    Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size. PMID:26900757

  8. Phase-tunable Majorana bound states in a topological N-SNS junction

    NASA Astrophysics Data System (ADS)

    Hansen, Esben Bork; Danon, Jeroen; Flensberg, Karsten

    2016-03-01

    We theoretically study the differential conductance of a one-dimensional normal-superconductor-normal-superconductor (N-SNS) junction with a phase bias applied between the two superconductors. We consider specifically a junction formed by a spin-orbit coupled semiconducting nanowire with regions of the nanowire having superconducting pairing induced by a bulk s -wave superconductor. When the nanowire is tuned into a topologically nontrivial phase by a Zeeman field, it hosts zero-energy Majorana modes at its ends as well as at the interface between the two superconductors. The phase-dependent splitting of the Majorana modes gives rise to features in the differential conductance that offer a clear distinction between the topologically trivial and nontrivial phases. We calculate the transport properties of the junction numerically and also present a simple analytical model that captures the main properties of the predicted tunneling spectroscopy.

  9. Membrane Nanotubes

    NASA Astrophysics Data System (ADS)

    Derényi, I.; Koster, G.; van Duijn, M. M.; Czövek, A.; Dogterom, M.; Prost, J.

    There is a growing pool of evidence showing the biological importance of membrane nanotubes (with diameter of a few tens of nanometers and length upto tens of microns) in various intra- and intercellular transport processes. These ubiquitous structures are often formed from flat membranes by highly localized forces generated by either the pulling of motor proteins or the pushing of polymerizing cytoskeletal filaments. In this chapter we give an overview of the theory of membrane nanotubes, their biological relevance, and the most recent experiments designed for the study of their formation and dynamics. We also discuss the effect of membrane proteins or lipid composition on the shape of the tubes, and the effect of antagonistic motor proteins on tube formation.

  10. Carbon nanotube composite materials

    DOEpatents

    O'Bryan, Gregory; Skinner, Jack L; Vance, Andrew; Yang, Elaine Lai; Zifer, Thomas

    2015-03-24

    A material consisting essentially of a vinyl thermoplastic polymer, un-functionalized carbon nanotubes and hydroxylated carbon nanotubes dissolved in a solvent. Un-functionalized carbon nanotube concentrations up to 30 wt % and hydroxylated carbon nanotube concentrations up to 40 wt % can be used with even small concentrations of each (less than 2 wt %) useful in producing enhanced conductivity properties of formed thin films.

  11. Encapsulation of Semiconducting Polymers in Vault Protein Cages

    SciTech Connect

    Ng, B.C.; Yu, M.; Gopal, A.; Rome, L.H.; Monbouquette, H.G.; Tolbert, S.H.

    2009-05-22

    We demonstrate that a semiconducting polymer [poly(2-methoxy-5-propyloxy sulfonate phenylene vinylene), MPS-PPV] can be encapsulated inside recombinant, self-assembling protein nanocapsules called 'vaults'. Polymer incorporation into these nanosized protein cages, found naturally at {approx}10,000 copies per human cell, was confirmed by fluorescence spectroscopy and small-angle X-ray scattering. Although vault cellular functions and gating mechanisms remain unknown, their large internal volume and natural prevalence within the human body suggests they could be used as carriers for therapeutics and medical imaging reagents. This study provides the groundwork for the use of vaults in encapsulation and delivery applications.

  12. Silicon germanium semiconductive alloy and method of fabricating same

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

    2008-01-01

    A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

  13. Ultraviolet optical absorptions of semiconducting copper phosphate glasses

    NASA Technical Reports Server (NTRS)

    Bae, Byeong-Soo; Weinberg, Michael C.

    1993-01-01

    Results are presented of a quantitative investigation of the change in UV optical absorption in semiconducting copper phosphate glasses with batch compositions of 40, 50, and 55 percent CuO, as a function of the Cu(2+)/Cu(total) ratio in the glasses for each glass composition. It was found that optical energy gap, E(opt), of copper phosphate glass is a function of both glass composition and Cu(2+)/Cu(total) ratio in the glass. E(opt) increases as the CuO content for fixed Cu(2+)/Cu(total) ratio and the Cu(2+)/Cu(total) ratio for fixed glass composition are reduced.

  14. Determining ionizing radiation using sensors based on organic semiconducting material

    SciTech Connect

    Raval, Harshil N.; Tiwari, Shree Prakash; Navan, Ramesh R.; Rao, V. Ramgopal

    2009-03-23

    The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.

  15. Mechanical properties of DNA origami nanoassemblies are determined by Holliday junction mechanophores.

    PubMed

    Shrestha, Prakash; Emura, Tomoko; Koirala, Deepak; Cui, Yunxi; Hidaka, Kumi; Maximuck, William J; Endo, Masayuki; Sugiyama, Hiroshi; Mao, Hanbin

    2016-08-19

    DNA nanoassemblies have demonstrated wide applications in various fields including nanomaterials, drug delivery and biosensing. In DNA origami, single-stranded DNA template is shaped into desired nanostructure by DNA staples that form Holliday junctions with the template. Limited by current methodologies, however, mechanical properties of DNA origami structures have not been adequately characterized, which hinders further applications of these materials. Using laser tweezers, here, we have described two mechanical properties of DNA nanoassemblies represented by DNA nanotubes, DNA nanopyramids and DNA nanotiles. First, mechanical stability of DNA origami structures is determined by the effective density of Holliday junctions along a particular stress direction. Second, mechanical isomerization observed between two conformations of DNA nanotubes at 10-35 pN has been ascribed to the collective actions of individual Holliday junctions, which are only possible in DNA origami with rotational symmetric arrangements of Holliday junctions, such as those in DNA nanotubes. Our results indicate that Holliday junctions control mechanical behaviors of DNA nanoassemblies. Therefore, they can be considered as 'mechanophores' that sustain mechanical properties of origami nanoassemblies. The mechanical properties observed here provide insights for designing better DNA nanostructures. In addition, the unprecedented mechanical isomerization process brings new strategies for the development of nano-sensors and actuators.

  16. Electro-mechanical Properties of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Anantram, M. P.; Yang, Liu; Han, Jie; Liu, J. P.; Saubum Subhash (Technical Monitor)

    1998-01-01

    We present a simple picture to understand the bandgap variation of carbon nanotubes with small tensile and torsional strains, independent of chirality. Using this picture, we are able to predict a simple dependence of d(Bandoap)$/$d(strain) on the value of $(N_x-N_y)*mod 3$, for semiconducting tubes. We also predict a novel change in sign of d(Bandgap)$/$d(strain) as a function of tensile strain arising from a change in the value of $q$ corresponding to the minimum bandgap. These calculations are complemented by calculations of the change in bandgap using energy minimized structures, and some important differences are discussed. The calculations are based on the $i$ electron approximation.

  17. Air-pressure tunable depletion width, rectification behavior, and charge conduction in oxide nanotubes.

    PubMed

    Alivov, Yahya; Funke, Hans H; Singh, Vivek; Nagpal, Prashant

    2015-02-01

    Metal-oxide nanotubes provide large surface areas and functionalizable surfaces for a variety of optical and electronic applications. Here we report air-tunable rectifying behavior, depletion width modulation, and two-dimensional (2D) charge conduction in hollow titanium-dioxide nanotubes. The metal contact forms a Schottky-diode in the nanotubes, and the rectification factor (on/off ratio) can be varied by more than 3 orders of magnitude (1-2 × 10(3)) as the air pressure is increased from 2 mTorr to atmospheric pressure. This behavior is explained using a change in depletion width of these thin nanotubes by adsorption of water vapor on both surfaces of a hollow nanotube, and the resulting formation of a metal-insulator-semiconductor (MIS) junction, which controls the 2D charge conduction properties in thin oxide nanotubes.

  18. Distinct electrical effects of multi-walled carbon nanotubes in two composites

    NASA Astrophysics Data System (ADS)

    Wang, Leizhi; Wang, Hua; Datta, Timir; Yin, Ming; Tian, Xingyou

    2014-11-01

    The temperature dependent conductivity of multi-walled carbon nanotube film (MWNT) is reported and the different electrical properties of nanotubes in two composites are compared. Due to the disordered structures, our carbon nanotube film displays variable range hopping behavior. While the geometric distributions of carbon nanotubes in the conducting polyaniline (PANI) and insulating polyamide (PA66) are similar, charge carriers transport distinctly. The conductive PANI, following one-dimensional variable range hopping, dominates the electrical properties of MWNT/PANI composites. The effect of MWNTs becomes prominent only at low temperature range. However, the contact junctions composed by adjacent carbon nanotubes, instead of nanotubes themselves or the polymer matrix, determine the electrical properties of MWNT/PA66 composites, showing the fluctuation induced tunneling characteristic.

  19. Noise characteristics of single-walled carbon nanotube network transistors

    NASA Astrophysics Data System (ADS)

    Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

    2008-07-01

    The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors.

  20. Noise characteristics of single-walled carbon nanotube network transistors.

    PubMed

    Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

    2008-07-16

    The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors. PMID:21828739

  1. Controlled fabrication of porous double-walled TiO2 nanotubes via ultraviolet-assisted anodization.

    PubMed

    Ali, Ghafar; Kim, Hyun Jin; Kim, Jae Joon; Cho, Sung Oh

    2014-04-01

    Double-walled TiO2 nanotubes with porous wall morphologies are fabricated by anodization under ultraviolet (UV) irradiation. TiO2 formed by anodization of Ti is activated to generate electrons and holes by UV and the anodization process is influenced by the photo-generated charges. As a consequence, morphologies of the fabricated TiO2 nanotubes can be adjusted by controlling the UV illumination. Double-walled TiO2 nanotubes or single-walled nanotubes can be selectively formed by switching on/off the UV illumination. The thickness of the inner and outer walls of the double-walled nanotubes can be tailored by changing the UV power. Due to their larger surface areas compared to single-walled nanotubes, the porous double-walled nanotubes exhibit an enhanced photo-degradation rate for methylene blue (MB). The mechanism of the porous double-walled TiO2 nanotubes is proposed based on the photoactive semiconducting property of the as-growing TiO2 nanotubes under UV.

  2. Superconducting qubits with semiconductor nanowire Josephson junctions

    NASA Astrophysics Data System (ADS)

    Petersson, K. D.; Larsen, T. W.; Kuemmeth, F.; Jespersen, T. S.; Krogstrup, P.; Nygård, J.; Marcus, C. M.

    2015-03-01

    Superconducting transmon qubits are a promising basis for a scalable quantum information processor. The recent development of semiconducting InAs nanowires with in situ molecular beam epitaxy-grown Al contacts presents new possibilities for building hybrid superconductor/semiconductor devices using precise bottom up fabrication techniques. Here, we take advantage of these high quality materials to develop superconducting qubits with superconductor-normal-superconductor Josephson junctions (JJs) where the normal element is an InAs semiconductor nanowire. We have fabricated transmon qubits in which the conventional Al-Al2O3-Al JJs are replaced by a single gate-tunable nanowire JJ. Using spectroscopy to probe the qubit we observe fluctuations in its level splitting with gate voltage that are consistent with universal conductance fluctuations in the nanowire's normal state conductance. Our gate-tunable nanowire transmons may enable new means of control for large scale qubit architectures and hybrid topological quantum computing schemes. Research supported by Microsoft Station Q, Danish National Research Foundation, Villum Foundation, Lundbeck Foundation and the European Commission.

  3. Carbon nanotubes and microwaves: interactions, responses, and applications.

    PubMed

    Vázquez, Ester; Prato, Maurizio

    2009-12-22

    The interaction of microwaves with carbon nanotubes (CNTs) is an interesting topic for a variety of potential applications. Microwaves have been used for the purification of CNTs and for their chemical functionalization, providing a technique for simple, green, and large-scale protocols. In addition, the selective destruction of metallic CNTs under microwave irradiation could potentially result in a batch of semiconducting-only nanotubes. As an innovative application, the combination of microwaves with well-aligned CNTs could produce a new illumination technology. Moreover, the microwave absorbing properties of CNTs and their different behavior from typical organic compounds may open the door to the preparation of a wide range of new materials useful in many fields. A few examples of practical applications include electromagnetic interference for protecting the environment from radiation and microwave hyperthermia for cancer treatment as well as other medical therapies requiring precise heating of biological tissues. PMID:20025299

  4. Nanotube Tunneling as a Consequence of Probable Discrete Trajectories

    NASA Technical Reports Server (NTRS)

    Robinson, Daryl C.

    2001-01-01

    It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but is divided into charge "islands." A clear understanding of tunneling phenomena can be useful to elucidate the mechanism for electrical conduction in nanotubes. This paper represents the first attempt to shed light on the aforementioned phenomenon through viewing tunneling as a natural consequence of "discrete trajectories." The relevance of this analysis is that it may provide further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. In a situation involving particles impinging on a classically impenetrable barrier, the result of quantum mechanics that the probability of detecting transmitted particles falls off exponentially is derived without wave theory. This paper should provide a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.

  5. Single Wall Carbon Nanotube-Based Structural Health Sensing Materials

    NASA Technical Reports Server (NTRS)

    Watkins, A. Neal; Ingram, JoAnne L.; Jordan, Jeffrey D.; Wincheski, Russell A.; Smits, Jan M.; Williams, Phillip A.

    2004-01-01

    Single wall carbon nanotube (SWCNT)-based materials represent the future aerospace vehicle construction material of choice based primarily on predicted strength-to-weight advantages and inherent multifunctionality. The multifunctionality of SWCNTs arises from the ability of the nanotubes to be either metallic or semi-conducting based on their chirality. Furthermore, simply changing the environment around a SWCNT can change its conducting behavior. This phenomenon is being exploited to create sensors capable of measuring several parameters related to vehicle structural health (i.e. strain, pressure, temperature, etc.) The structural health monitor is constructed using conventional electron-beam lithographic and photolithographic techniques to place specific electrode patterns on a surface. SWCNTs are then deposited between the electrodes using a dielectrophoretic alignment technique. Prototypes have been constructed on both silicon and polyimide substrates, demonstrating that surface-mountable and multifunctional devices based on SWCNTs can be realized.

  6. Stable and responsive fluorescent carbon nanotube silica gels

    SciTech Connect

    Dattelbaum, Andrew M; Gupta, Gautam; Doorn, Stephen K; Duque, Juan G

    2010-05-03

    Here we report a general route to prepare silica nanocomposite gels doped with fluorescent single walled carbon nanotubes (SWNT). We show that tetramethylorthosilicate (TMOS) vapors can be used to gel an aqueous suspension of surfactant-wrapped SWNT while maintaining fluorescence from the semiconducting nanotubes. The vapor phase silica process is performed at room temperature and is simple, reproducible, relatively quick, and requires no dilution of SWNT dispersions. However, exposure of aqueous SWNT suspensions to TMOS vapors resulted in an acidification of the suspension prior to gelation that caused a decrease in the emission signal from sodium dodecylsulfate (SDS) wrapped SWNT. We also show that although the SWNT are encapsulated in silica the emission signal from the encapsulated SWNT may be attenuated by exposing the nanocomposites to small aromatic molecules known to mitigate SWNT emission. These results demonstrate a new route for the preparation of highly luminescent SWNT/silica composite materials that are potentially useful for future sensing applications.

  7. Strain engineering in semiconducting two-dimensional crystals.

    PubMed

    Roldán, Rafael; Castellanos-Gomez, Andrés; Cappelluti, Emmanuele; Guinea, Francisco

    2015-08-12

    One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS2, WS2, MoSe2 and WSe2). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc, is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed. PMID:26199038

  8. Surface passivation of semiconducting oxides by self-assembled nanoparticles

    PubMed Central

    Park, Dae-Sung; Wang, Haiyuan; Vasheghani Farahani, Sepehr K.; Walker, Marc; Bhatnagar, Akash; Seghier, Djelloul; Choi, Chel-Jong; Kang, Jie-Hun; McConville, Chris F.

    2016-01-01

    Physiochemical interactions which occur at the surfaces of oxide materials can significantly impair their performance in many device applications. As a result, surface passivation of oxide materials has been attempted via several deposition methods and with a number of different inert materials. Here, we demonstrate a novel approach to passivate the surface of a versatile semiconducting oxide, zinc oxide (ZnO), evoking a self-assembly methodology. This is achieved via thermodynamic phase transformation, to passivate the surface of ZnO thin films with BeO nanoparticles. Our unique approach involves the use of BexZn1-xO (BZO) alloy as a starting material that ultimately yields the required coverage of secondary phase BeO nanoparticles, and prevents thermally-induced lattice dissociation and defect-mediated chemisorption, which are undesirable features observed at the surface of undoped ZnO. This approach to surface passivation will allow the use of semiconducting oxides in a variety of different electronic applications, while maintaining the inherent properties of the materials. PMID:26757827

  9. Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

    PubMed Central

    Kazemi, Alireza; He, Xiang; Alaie, Seyedhamidreza; Ghasemi, Javad; Dawson, Noel Mayur; Cavallo, Francesca; Habteyes, Terefe G.; Brueck, Steven R. J.; Krishna, Sanjay

    2015-01-01

    Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K. PMID:26126936

  10. High-mobility ultrathin semiconducting films prepared by spin coating

    NASA Astrophysics Data System (ADS)

    Mitzi, David B.; Kosbar, Laura L.; Murray, Conal E.; Copel, Matthew; Afzali, Ali

    2004-03-01

    The ability to deposit and tailor reliable semiconducting films (with a particular recent emphasis on ultrathin systems) is indispensable for contemporary solid-state electronics. The search for thin-film semiconductors that provide simultaneously high carrier mobility and convenient solution-based deposition is also an important research direction, with the resulting expectations of new technologies (such as flexible or wearable computers, large-area high-resolution displays and electronic paper) and lower-cost device fabrication. Here we demonstrate a technique for spin coating ultrathin (~50Å), crystalline and continuous metal chalcogenide films, based on the low-temperature decomposition of highly soluble hydrazinium precursors. We fabricate thin-film field-effect transistors (TFTs) based on semiconducting SnS2-xSex films, which exhibit n-type transport, large current densities (>105Acm-2) and mobilities greater than 10cm2V-1s-1-an order of magnitude higher than previously reported values for spin-coated semiconductors. The spin-coating technique is expected to be applicable to a range of metal chalcogenides, particularly those based on main group metals, as well as for the fabrication of a variety of thin-film-based devices (for example, solar cells, thermoelectrics and memory devices).

  11. Synthesis and Electronic Transport in Single-Walled Carbon Nanotubes of Known Chirality

    NASA Astrophysics Data System (ADS)

    Caldwell, Robert Victor

    Since their discovery in 1991, carbon nanotubes have proven to be a very interesting material for its physical strength, originating from the pure carbon lattice and strong covalent sp2 orbital bonds, and electronic properties which are derived from the lattice structure lending itself to either a metallic or semiconducting nature among its other properties. Carbon nanotubes have been researched with an eye towards industry applications ranging from use as an alloy in metals and plastics to improve physical strength of the resulting materials to uses in the semiconductor industry as either an interconnect or device layer for computer chips to chemical or biological sensors. This thesis focuses on both the synthesis of individual single-walled carbon nanotubes as well as the electrical properties of those tubes. What makes the work herein different from that of other thesis is that the research has been performed on carbon nanotubes of known chirality. Having first grown carbon nanotubes with a chemical vapor deposition growth in a quartz tube using ethanol vapor as a feedstock to grow long individual single-walled carbon nanotubes on a silicon chip that is also compatible with Rayleigh scattering spectroscopy to identify the chiral indices of the carbon nanotubes in question, those tubes were then transferred with a mechanical transfer process specially designed in our research lab onto a substrate of our choosing before an electrical device was made out of those tubes using standard electron beam lithography. The focus in this thesis is on the work that went into designing and testing this process as well as the initial results of the electronic properties of those carbon nanotubes of known chirality, such as the first known electrical measurements on single individual armchair carbon nanotubes as well as the first known electrical measurements of a single semiconducting carbon nanotube on thin hexagonal boron nitride to study the effects of the surface optical

  12. Four-junction superconducting circuit

    PubMed Central

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  13. Four-junction superconducting circuit.

    PubMed

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J Q

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  14. Four-junction superconducting circuit.

    PubMed

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J Q

    2016-06-30

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit.

  15. Creating new superconducting & semiconducting nanomaterials and investigating the effect of reduced dimensionality on their properties

    NASA Astrophysics Data System (ADS)

    Mishra, Sukhada

    The field of nanomaterials has continued to attract researchers to understand the fundamentals and to investigate potential applications in the fields of semiconductor physics, microfabrication, nanomedicine, surface sciences etc. One of the most critical aspects of the nanomaterials research is to establish synthetic protocols, which can address the underlying product requirements of reproducibility, homogenous morphology and controlled elemental composition. We have focused our research in exploring synthetic routes for the synthesis of superconducting and semiconducting nanomaterials and analyze their structure---property relationship through detailed characterizations. The first part of dissertation is focused on the synthesis of superconducting FeSe nanostructures using catalyst assisted chemical vapor deposition (CVD) technique. The effect of catalyst---FeSe interphase on the d spacing of the FeSe nanostructures has been analyzed, and the internal pressure effect on the Tc has been investigated further through in depth characterizations. The emphasis of second part is on the development of a simple yet versatile protocol for the synthesis of vertically aligned nanorod arrays on conducting substrate by combining electron beam lithography technique with electrochemical deposition. The technique has been utilized to fabricate photovoltaic CdTe nanorod arrays on conducting substrate and further extended to devise CdS---CdTe nanorod arrays to create radial and lateral p---n junction assembly. Using photo---electrochemical analysis, it was observed that, the nanorod arrays yielded higher photo---electrochemical current compared to the thin film counterpart. The third part of dissertation describes the CVD protocol to synthesize multifunctional, dumbbell shaped Au---CoSe nanoparticles, which possess potential applications in ' theronostic' biological examinations.

  16. Carbon Nanotube Gated Lateral Resonant Tunneling Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Wang, D. P.

    2005-03-01

    Carbon nanotubes have generated a great deal of interest for use in novel devices due to their small size and high current densities. We have produced a new type of lateral resonant tunneling field-effect transistor using a Y-junction multiwalled carbon nanotube as the dual gate on a narrow wire etched from a modulation-doped GaAs/AlGaAs heterostructure. The two branches of the Y-junction nanotube produced in an alumina nanotemplate array ootnotetextLi, J., Papadopoulos, C. and Xu, J. M., ``Growing Y- Junction Carbon Nanotubes" Nature 402, 253-254, 2000. are used as gates to produce a voltage-tunable double-barrier potential for the carriers traveling from source to drain along the wire. The three terminal I-V characteristics of the device have been measured at 4.2K. Conductance oscillation is observed as a function of dual gate potential, indicating electron resonant tunneling through the energy states between the barriers. Detailed measurement and comparison with self-consistent potential simulations will be presented.

  17. Stacked mechanical nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts

    DOEpatents

    Wang, Zhong L.; Xu, Sheng

    2011-08-23

    An electric power generator includes a first conductive layer, a plurality of semiconducting piezoelectric nanostructures, a second conductive layer and a plurality of conductive nanostructures. The first conductive layer has a first surface from which the semiconducting piezoelectric nanostructures extend. The second conductive layer has a second surface and is parallel to the first conductive layer so that the second surface faces the first surface of the first conductive layer. The conductive nanostructures depend downwardly therefrom. The second conductive layer is spaced apart from the first conductive layer at a distance so that when a force is applied, the semiconducting piezoelectric nanostructures engage the conductive nanostructures so that the piezoelectric nanostructures bend, thereby generating a potential difference across the at semiconducting piezoelectric nanostructures and also thereby forming a Schottky barrier between the semiconducting piezoelectric nanostructures and the conductive nanostructures.

  18. Magnetic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Reiss, Günter; Schmalhorst, Jan; Thomas, Andre; Hütten, Andreas; Yuasa, Shinji

    In magnetoelectronic devices large opportunities are opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on the relative orientation of the magnetization of the electrodes is found. Within a short time, the amplitude of the resistance change of the junctions increased dramatically. We will cover Al-O and MgO based junctions and present highly spin-polarized electrode materials such as Heusler alloys. Furthermore, we will give a short overview on applications such as read heads in hard disk drives, storage cells in MRAMs, field programmable logic circuits and biochips. Finally, we will discuss the currently growing field of current induced magnetization switching.

  19. Nanoengineering heat transfer performance at carbon nanotube interfaces.

    PubMed

    Xu, Zhiping; Buehler, Markus J

    2009-09-22

    Carbon nanotubes are superb materials for nanoscale thermal management and phononic devices applications, due to their extremely high thermal conductivity (3000-6600 W/mK) and quasi-one-dimensional geometry. However, the presence of interfaces between individual carbon nanotubes as found widely in nanocomposites, nanoelectronics, and nanodevices severely limits their performance for larger scale applications. Solving this issue requires a deep understanding of the heat transfer mechanism at this nanoscale interface between low-dimensional structures, where conventional models developed for interfaces in bulk materials do not apply. Here we address this challenge through a bottom-up approach based on atomistic simulations. We demonstrate that the huge thermal resistance of carbon nanotube junctions can be significantly improved through modifying the molecular structure at the interface to enhance both the matching of phonon spectra and phonon mode coupling. Specifically, two approaches based on polymer wrapping and metal coatings are investigated here and have shown to improve both the structural stability and interfacial thermal conductivity of carbon nanotube junctions. By properly designing the interface molecular structure between individual carbon nanotubes, significant performance gains up to a factor of 4 can be achieved. These results pave the way for future designs of thermal management networks and phononic devices with thermally transparent and structurally stable interfaces.

  20. First-Principles Simulations of Chemical Reactions in an HCl Molecule Embedded inside a C or BN Nanotube Induced by Ultrafast Laser Pulses

    NASA Astrophysics Data System (ADS)

    Miyamoto, Yoshiyuki; Zhang, Hong; Rubio, Angel

    2010-12-01

    We show by first-principles simulations that ultrafast laser pulses induce different chemical reactions in a molecule trapped inside a nanotube. A strong laser pulse polarized perpendicular to the tube axis induces a giant bond stretch of an encapsulated HCl molecule in semiconducting carbon nanotube or in a BN nanotube. Depending on the initial orientation of the HCl molecule, the subsequent laser-induced dynamics is different: either complete disintegration or rebonding of the HCl molecule. Radial motion of the nanotube is always observed and a vacancy appears on the tube wall when the HCl is perpendicular to the tube axis. Those results are important to analyze confined nanochemistry and to manipulate molecules and nanostructures encapsulated in organic and inorganic nanotubes.

  1. First-principles simulations of chemical reactions in an HCl molecule embedded inside a C or BN nanotube induced by ultrafast laser pulses.

    PubMed

    Miyamoto, Yoshiyuki; Zhang, Hong; Rubio, Angel

    2010-12-10

    We show by first-principles simulations that ultrafast laser pulses induce different chemical reactions in a molecule trapped inside a nanotube. A strong laser pulse polarized perpendicular to the tube axis induces a giant bond stretch of an encapsulated HCl molecule in semiconducting carbon nanotube or in a BN nanotube. Depending on the initial orientation of the HCl molecule, the subsequent laser-induced dynamics is different: either complete disintegration or rebonding of the HCl molecule. Radial motion of the nanotube is always observed and a vacancy appears on the tube wall when the HCl is perpendicular to the tube axis. Those results are important to analyze confined nanochemistry and to manipulate molecules and nanostructures encapsulated in organic and inorganic nanotubes.

  2. First-Principles Simulations of Chemical Reactions in an HCl Molecule Embedded inside a C or BN Nanotube Induced by Ultrafast Laser Pulses

    SciTech Connect

    Miyamoto, Yoshiyuki; Zhang Hong; Rubio, Angel

    2010-12-10

    We show by first-principles simulations that ultrafast laser pulses induce different chemical reactions in a molecule trapped inside a nanotube. A strong laser pulse polarized perpendicular to the tube axis induces a giant bond stretch of an encapsulated HCl molecule in semiconducting carbon nanotube or in a BN nanotube. Depending on the initial orientation of the HCl molecule, the subsequent laser-induced dynamics is different: either complete disintegration or rebonding of the HCl molecule. Radial motion of the nanotube is always observed and a vacancy appears on the tube wall when the HCl is perpendicular to the tube axis. Those results are important to analyze confined nanochemistry and to manipulate molecules and nanostructures encapsulated in organic and inorganic nanotubes.

  3. Geometric conservation laws for cells or vesicles with membrane nanotubes or singular points.

    PubMed

    Yin, Yajun; Yin, Jie

    2006-07-12

    On the basis of the integral theorems about the mean curvature and Gauss curvature, geometric conservation laws for cells or vesicles are proved. These conservation laws may depict various special bionano structures discovered in experiments, such as the membrane nanotubes and singular points grown from the surfaces of cells or vesicles. Potential applications of the conservation laws to lipid nanotube junctions that interconnect cells or vesicles are discussed.

  4. Victory Junction Gang Camp

    ERIC Educational Resources Information Center

    Shell, Ryan

    2007-01-01

    This article describes the Victory Junction Gang Camp, a not-for-profit, NASCAR-themed camp for children with chronic medical conditions that serves 24 different disease groups. The mission of the camp is to give children life-changing camping experiences that are exciting, fun, and empowering in a safe and medically sound environment. While doing…

  5. Covalent functionalization of single-walled carbon nanotubes through attachment of aromatic diisocyanate molecules from first principles

    NASA Astrophysics Data System (ADS)

    Goclon, Jakub; Kozlowska, Mariana; Rodziewicz, Pawel

    2015-01-01

    We performed first-principle calculations of the covalent functionalization of metallic (6,0) and semiconducting (10,0) single-walled carbon nanotubes (SWCNTs) with aromatic diisocyanate molecules, namely, 4,4‧-methylene diphenyl diisocyanate (MDI) and toluene-2,4-diisocyanate (TDI). The corresponding binding energies of the attached molecules were scrutinized. We analyzed the changes in the electronic band structure of SWCNTs caused by the amide bond formation after the functionalization process. Furthermore, the MDI-MDI and TDI-TDI mutual interactions on the nanotube surface were investigated.

  6. Amplified spontaneous emission properties of semiconducting organic materials.

    PubMed

    Calzado, Eva M; Boj, Pedro G; Díaz-García, María A

    2010-06-18

    This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature.

  7. Excitons in semiconducting superlattices, quantum wells, and ternary alloys

    SciTech Connect

    Sturge, M.D. . Dept. of Physics); Nahory, R.E.; Tamargo, M.C. )

    1990-08-22

    It is now possible to fabricated semiconducting layered structures with precisely defined layer thicknesses of a few atomic diameters. Examples are the quantum well'' and the superlattice'' structures, in which semiconductors with different band gaps are interleaved. Microstructures'' can be produced from this material by patterning and etching them on a small ({approximately}10nm) scale. Their electronic properties are quite different from those of the constituents and offer interesting new possibilities both in device design and in basic physics. This proposal aims to improve our understanding of optically excited states ( excitons'' and electron-hole plasmas'') in these structures. Work will also continue on ternary alloys, primarily to establish if the alloy disorder produces a mobility edge for excitons, and on II-VI compounds, where the principal interest at present is in the nature of the exciton-phonon coupling.

  8. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene

    NASA Astrophysics Data System (ADS)

    Zhuang, Shendong; Chen, Yan; Xia, Yidong; Tang, Nujiang; Xu, Xiaoyong; Hu, Jingguo; Chen, Zhuo

    2016-04-01

    Solution-processed graphene quantum dots (GQDs) possess a moderate bandgap, which make them a promising candidate for optoelectronics devices. However, negative photoconductivity (NPC) and hysteresis that happen in the photoelectric conversion process could be harmful to performance of the GQDs-based devices. So far, their origins and relations have remained elusive. Here, we investigate experimentally the origins of the NPC and hysteresis in GQDs. By comparing the hysteresis and photoconductance of GQDs under different relative humidity conditions, we are able to demonstrate that NPC and hysteresis coexist in GQDs and both are attributed to the carrier trapping effect of surface adsorbed moisture. We also demonstrate that GQDs could exhibit positive photoconductivity with three-order-of-magnitude reduction of hysteresis after a drying process and a subsequent encapsulation. Considering the pervasive moisture adsorption, our results may pave the way for a commercialization of semiconducting graphene-based and diverse solution-based optoelectronic devices.

  9. Semiconductivity in YBa2 - xSrxCu3Oy

    NASA Astrophysics Data System (ADS)

    Uluǧ, A.; Uluǧ, B.; Şener, E.

    1996-08-01

    Structural and electrical properties of YBa2-xSrxCu3Oy prepared under ambient oxygen pressure were systematically investigated for 0≤x≤2.0. Samples with high Sr contents, x≥1.7, showed semiconductive properties with an activation energy of ˜150 meV at high temperature, T≥80 K. At low temperatures, T≤80 K, activation energy dropped to ˜3.00 and ˜0.85 meV for x=1.7-1.8 and x=1.9-2.0, respectively. It is argued that YSr2Cu3Oy is likely to have a tetragonal structure and that the disorder introduced by Sr substitution affects electrical conduction, which involves charge hopping between the CuO chains at high Sr contents.

  10. Nanoscale semiconducting silicon as a nutritional food additive

    NASA Astrophysics Data System (ADS)

    Canham, L. T.

    2007-05-01

    Very high surface area silicon powders can be realized by high energy milling or electrochemical etching techniques. Such nanoscale silicon structures, whilst biodegradable in the human gastrointestinal tract, are shown to be remarkably stable in most foodstuffs and beverages. The potential for using silicon to improve the shelf life and bioavailability of specific nutrients in functional foods is highlighted. Published drug delivery data implies that the nanoentrapment of hydrophobic nutrients will significantly improve their dissolution kinetics, through a combined effect of nanostructuring and solid state modification. Nutrients loaded to date include vitamins, fish oils, lycopene and coenzyme Q10. In addition, there is growing published evidence that optimized release of orthosilicic acid, the biodegradation product of semiconducting silicon in the gut, offers beneficial effects with regard bone health. The utility of nanoscale silicon in the nutritional field shows early promise and is worthy of much further study.

  11. Encapsulation of Semiconducting Polymers in Vault Protein Cages

    PubMed Central

    Ng, Benny C.; Yu, Marcella; Gopal, Ajaykumar; Rome, Leonard H.; Monbouquette, Harold G.; Tolbert, Sarah H.

    2009-01-01

    We demonstrate that a semiconducting polymer [poly(2-methoxy-5-propyloxy sulfonate phenylene vinylene), MPS-PPV] can be encapsulated inside recombinant, self-assembling protein nanocapsules called “vaults”. Polymer incorporation into these nano-sized protein cages, found naturally at ~10,000 copies per human cell, was confirmed by fluorescent spectroscopy and small-angle X-ray scattering (SAXS). Although vault cellular functions and gating mechanism remain unknown, their large internal volume and natural prevalence within the human body suggests they could be used as carriers for therapeutics and medical imaging reagents. This study provides the groundwork for the use of vaults in encapsulation and delivery applications. PMID:18803422

  12. Semiconducting Polymer Nanobioconjugates for Targeted Photothermal Activation of Neurons.

    PubMed

    Lyu, Yan; Xie, Chen; Chechetka, Svetlana A; Miyako, Eijiro; Pu, Kanyi

    2016-07-27

    Optogenetics provides powerful means for precise control of neuronal activity; however, the requirement of transgenesis and the incapability to extend the neuron excitation window into the deep-tissue-penetrating near-infrared (NIR) region partially limit its application. We herein report a potential alternative approach to optogenetics using semiconducting polymer nanobioconjugates (SPNsbc) as the photothermal nanomodulator to control the thermosensitive ion channels in neurons. SPNsbc are designed to efficiently absorb the NIR light at 808 nm and have a photothermal conversion efficiency higher than that of gold nanorods. By virtue of the fast heating capability in conjunction with the precise targeting to the thermosensitive ion channel, SPNsbc can specifically and rapidly activate the intracellular Ca(2+) influx of neuronal cells in a reversible and safe manner. Our study provides an organic nanoparticle based strategy that eliminates the need for genetic transfection to remotely regulate cellular machinery. PMID:27404507

  13. BaMn2Sb2: A New Semiconducting Ferromagnet

    NASA Astrophysics Data System (ADS)

    Li, Jianneng; Stadler, S.; Karki, A.; Xiong, Y.; Jin, R.

    2012-02-01

    We have grown high-quality single crystals of BaMn2Sb2, which possesses the ThCr2Si2 structure as determined by X-ray powder diffraction technique. Magnetization measurements indicate that BaMn2Fe2 is ferromagnetic below TC = 580K. On the other hand, the temperature dependence of electrical resistivity shows semiconducting behavior, which can be described by thermally-activated resistivity formula with thermal activation energy about 0.25 eV . While the Hall coefficient has positive sign between 2 and 300 K, the Seebeck Coefficient undergoes sign change from positive at high temperatures to negative at low temperatures, reaching -260 μV/K at 70 K. The implication will be discussed.

  14. Semiconducting nanowire field effect transistor for nanoelectronics and nanomechanics

    NASA Astrophysics Data System (ADS)

    Deshmukh, Mandar

    2013-02-01

    Semiconducting nanowire transistors offer an interesting avenue to make fundamentally new device architecture for future switching devices. I will our work to develop a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility using InAs nanowires and also discuss electrical characterization of these devices. Our process uses e-beam lithography with a single resist-spinning step and does not require chemical etching. We measure significantly larger mobility and good sub-threshold characteristics [1]. I will also discuss the applications of using suspended nanowire transistors in studying mechanics and thermal properties of nanostructures as they can be useful in studying a wide variety of physics at the nanoscale. This work is supported by Government of India and partially supported by IBM India.

  15. Amplified Spontaneous Emission Properties of Semiconducting Organic Materials

    PubMed Central

    Calzado, Eva M.; Boj, Pedro G.; Díaz-García, María A.

    2010-01-01

    This paper aims to review the recent advances achieved in the field of organic solid-state lasers with respect to the usage of semiconducting organic molecules and oligomers in the form of thin films as active laser media. We mainly focus on the work performed in the last few years by our research group. The amplified spontaneous emission (ASE) properties, by optical pump, of various types of molecules doped into polystyrene films in waveguide configuration, are described. The various systems investigated include N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine (TPD), several perilenediimide derivatives (PDIs), as well as two oligo-phenylenevinylene derivatives. The ASE characteristics, i.e., threshold, emission wavelength, linewidth, and photostability are compared with that of other molecular materials investigated in the literature. PMID:20640167

  16. Brain barriers: Crosstalk between complex tight junctions and adherens junctions

    PubMed Central

    Tietz, Silvia

    2015-01-01

    Unique intercellular junctional complexes between the central nervous system (CNS) microvascular endothelial cells and the choroid plexus epithelial cells form the endothelial blood–brain barrier (BBB) and the epithelial blood–cerebrospinal fluid barrier (BCSFB), respectively. These barriers inhibit paracellular diffusion, thereby protecting the CNS from fluctuations in the blood. Studies of brain barrier integrity during development, normal physiology, and disease have focused on BBB and BCSFB tight junctions but not the corresponding endothelial and epithelial adherens junctions. The crosstalk between adherens junctions and tight junctions in maintaining barrier integrity is an understudied area that may represent a promising target for influencing brain barrier function. PMID:26008742

  17. On the encapsulation of azafullerenes inside the single-walled carbon nanotubes: Density-functional theory based treatments

    NASA Astrophysics Data System (ADS)

    Ganji, M. D.; Mousavy, M.; Rezvani, M.

    2011-04-01

    We theoretically studied the encapsulation of azafullerene (C 59N) inside the single-walled carbon nanotubes (SWCNTs) from the first-principles. Adsorption energy is calculated, and the azafullerene affinities for the typical semiconducting and metallic nanotubes are investigated and compared with those of pure C 60 fullerene. It has been found that the azafullerene as well as the fullerene affinity for the semiconducting nanotubes is stronger than that for the metallic ones, and the energy values and binding distances are typical for the physisorption. Our first-principles results indicate that the interaction between SWCNTs and azafullerenes is comparable with the nanotubes-C 60 system. The charge analysis shows, however, that the charges have been transferred from the cage to the tube in the azafullerene peapods, while in the fullerene peapods the charges were found to be transferred from the tube to the fullerene nanocage. Furthermore, it was found that the interaction between the considered fullerenes and host nanotubes strongly depends on the tube diameters.

  18. A semiconducting organic radical cationic host-guest complex.

    PubMed

    Fahrenbach, Albert C; Sampath, Srinivasan; Late, Dattatray J; Barnes, Jonathan C; Kleinman, Samuel L; Valley, Nicholas; Hartlieb, Karel J; Liu, Zhichang; Dravid, Vinayak P; Schatz, George C; Van Duyne, Richard P; Stoddart, J Fraser

    2012-11-27

    The self-assembly and solid-state semiconducting properties of single crystals of a trisradical tricationic complex composed of the diradical dicationic cyclobis(paraquat-p-phenylene) (CBPQT(2(•+))) ring and methyl viologen radical cation (MV(•+)) are reported. An organic field effect transistor incorporating single crystals of the CBPQT(2(•+))⊂MV(•+) complex was constructed using lithographic techniques on a silicon substrate and shown to exhibit p-type semiconductivity with a mobility of 0.05 cm(2) V(-1) s(-1). The morphology of the crystals on the silicon substrate was characterized using scanning electron microscopy which revealed that the complexes self-assemble into "molecular wires" observable by the naked-eye as millimeter long crystalline needles. The nature of the recognition processes driving this self-assembly, radical-radical interactions between bipyridinium radical cations (BIPY(•+)), was further investigated by resonance Raman spectroscopy in conjunction with theoretical investigations of the vibrational modes, and was supported by X-ray structural analyses of the complex and its free components in both their radical cationic and dicationic redox states. These spectroscopic investigations demonstrate that the bond order of the BIPY(•+) radical cationic units of host and guest components is not changed upon complexation, an observation which relates to its conductivity in the solid-state. We envision the modularity inherent in this kind of host-guest complexation could be harnessed to construct a library of custom-made electronic organic materials tailored to fit the specific needs of a given electronic application.

  19. Detection of single ion channel activity with carbon nanotubes

    PubMed Central

    Zhou, Weiwei; Wang, Yung Yu; Lim, Tae-Sun; Pham, Ted; Jain, Dheeraj; Burke, Peter J.

    2015-01-01

    Many processes in life are based on ion currents and membrane voltages controlled by a sophisticated and diverse family of membrane proteins (ion channels), which are comparable in size to the most advanced nanoelectronic components currently under development. Here we demonstrate an electrical assay of individual ion channel activity by measuring the dynamic opening and closing of the ion channel nanopores using single-walled carbon nanotubes (SWNTs). Two canonical dynamic ion channels (gramicidin A (gA) and alamethicin) and one static biological nanopore (α-hemolysin (α-HL)) were successfully incorporated into supported lipid bilayers (SLBs, an artificial cell membrane), which in turn were interfaced to the carbon nanotubes through a variety of polymer-cushion surface functionalization schemes. The ion channel current directly charges the quantum capacitance of a single nanotube in a network of purified semiconducting nanotubes. This work forms the foundation for a scalable, massively parallel architecture of 1d nanoelectronic devices interrogating electrophysiology at the single ion channel level. PMID:25778101

  20. Detection of single ion channel activity with carbon nanotubes.

    PubMed

    Zhou, Weiwei; Wang, Yung Yu; Lim, Tae-Sun; Pham, Ted; Jain, Dheeraj; Burke, Peter J

    2015-01-01

    Many processes in life are based on ion currents and membrane voltages controlled by a sophisticated and diverse family of membrane proteins (ion channels), which are comparable in size to the most advanced nanoelectronic components currently under development. Here we demonstrate an electrical assay of individual ion channel activity by measuring the dynamic opening and closing of the ion channel nanopores using single-walled carbon nanotubes (SWNTs). Two canonical dynamic ion channels (gramicidin A (gA) and alamethicin) and one static biological nanopore (α-hemolysin (α-HL)) were successfully incorporated into supported lipid bilayers (SLBs, an artificial cell membrane), which in turn were interfaced to the carbon nanotubes through a variety of polymer-cushion surface functionalization schemes. The ion channel current directly charges the quantum capacitance of a single nanotube in a network of purified semiconducting nanotubes. This work forms the foundation for a scalable, massively parallel architecture of 1d nanoelectronic devices interrogating electrophysiology at the single ion channel level.

  1. Detection of single ion channel activity with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Zhou, Weiwei; Wang, Yung Yu; Lim, Tae-Sun; Pham, Ted; Jain, Dheeraj; Burke, Peter J.

    2015-03-01

    Many processes in life are based on ion currents and membrane voltages controlled by a sophisticated and diverse family of membrane proteins (ion channels), which are comparable in size to the most advanced nanoelectronic components currently under development. Here we demonstrate an electrical assay of individual ion channel activity by measuring the dynamic opening and closing of the ion channel nanopores using single-walled carbon nanotubes (SWNTs). Two canonical dynamic ion channels (gramicidin A (gA) and alamethicin) and one static biological nanopore (α-hemolysin (α-HL)) were successfully incorporated into supported lipid bilayers (SLBs, an artificial cell membrane), which in turn were interfaced to the carbon nanotubes through a variety of polymer-cushion surface functionalization schemes. The ion channel current directly charges the quantum capacitance of a single nanotube in a network of purified semiconducting nanotubes. This work forms the foundation for a scalable, massively parallel architecture of 1d nanoelectronic devices interrogating electrophysiology at the single ion channel level.

  2. Design and characterization of metal and semiconducting nanostructures and nanodevices

    NASA Astrophysics Data System (ADS)

    Theiss, Jesse Robert

    This dissertation presents several studies that look at the unique properties and applications of metals and semiconductors when the dimensions of these materials are confined to the nanoscale. Chapter 1 provides background material that will aid in understanding the research presented in this dissertation. It begins with an introduction to plasmonics and an analytical derivation of the electromagnetic resonance conditions that have made this field so popular in the last 10--15 years. Particular interest is given to localized surface plasmon resonances that occur when light is incident on metallic nanoparticles, and how these plasmon resonances interact with one another. The second half of the introductory chapter turns to a slightly older but still exciting material, the carbon nanotube, whose electronic and optical properties vary significantly due to a slight change in crystal orientation. We discuss both of these topics in the context of Raman spectroscopy, where plasmons can be used to enhance the scattering process and Raman can be used to give detailed information about the structure of nanotubes. Chapter 2 presents the first plasmonics research project, where we demonstrate an angle evaporation method for fabricating arrays of metal nanoparticle pairs with separations on the order of a single nanometer. We image the small separations between particles, which we often refer to as "nanogaps," using high resolution transmission electron microscopy (TEM). Then, we use Raman spectroscopy to characterize the high electric field enhancements produced when the particles are illuminated with a visible wavelength laser. We find a very strong polarization dependence of the Raman intensity. We use numerical simulations to confirm both the high electric field enhancements and the observed polarization dependence for a particular nanoparticle geometry imaged by TEM, suggesting these particles might provide exceptionally high field enhancements and Raman scattering

  3. Cross-polarized excitons in carbon nanotubes.

    PubMed

    Kilina, Svetlana; Tretiak, Sergei; Doorn, Stephen K; Luo, Zhengtang; Papadimitrakopoulos, Fotios; Piryatinski, Andrei; Saxena, Avadh; Bishop, Alan R

    2008-05-13

    Polarization of low-lying excitonic bands in finite-size semiconducting single-walled carbon nanotubes (SWNTs) is studied by using quantum-chemical methodologies. Our calculations elucidate properties of cross-polarized excitons, which lead to the transverse optical absorption of nanotubes and presumably couple to intermediate-frequency modes recently observed in resonance Raman excitation spectroscopy. We identify up to 12 distinct excitonic transitions below the second fundamental band associated with the E(22) van Hove singularity. Calculations for several chiral SWNTs distinguish the optically active "bright" excitonic band polarized parallel to the tube axis and several optically "weak" cross-polarized excitons. The rest are optically (near) forbidden "dark" transitions. An analysis of the transition density matrices related to excitonic bands provides detailed information about delocalization of excitonic wavefunction along the tube. Utilization of the natural helical coordinate system accounting for the tube chirality allows one to disentangle longitudinal and circumferential components. The distribution of the transition density matrix along a tube axis is similar for all excitons. However, four parallel-polarized excitons associated with the E(11) transition are more localized along the circumference of a tube, compared with others related to the E(12) and E(21) cross-polarized transitions. Calculated splitting between optically active parallel- and cross-polarized transitions increases with tube diameter, which compares well with experimental spectroscopic data. PMID:18463293

  4. Cross-polarized excitons in carbon nanotubes

    PubMed Central

    Kilina, Svetlana; Tretiak, Sergei; Doorn, Stephen K.; Luo, Zhengtang; Papadimitrakopoulos, Fotios; Piryatinski, Andrei; Saxena, Avadh; Bishop, Alan R.

    2008-01-01

    Polarization of low-lying excitonic bands in finite-size semiconducting single-walled carbon nanotubes (SWNTs) is studied by using quantum-chemical methodologies. Our calculations elucidate properties of cross-polarized excitons, which lead to the transverse optical absorption of nanotubes and presumably couple to intermediate-frequency modes recently observed in resonance Raman excitation spectroscopy. We identify up to 12 distinct excitonic transitions below the second fundamental band associated with the E22 van Hove singularity. Calculations for several chiral SWNTs distinguish the optically active “bright” excitonic band polarized parallel to the tube axis and several optically “weak” cross-polarized excitons. The rest are optically (near) forbidden “dark” transitions. An analysis of the transition density matrices related to excitonic bands provides detailed information about delocalization of excitonic wavefunction along the tube. Utilization of the natural helical coordinate system accounting for the tube chirality allows one to disentangle longitudinal and circumferential components. The distribution of the transition density matrix along a tube axis is similar for all excitons. However, four parallel-polarized excitons associated with the E11 transition are more localized along the circumference of a tube, compared with others related to the E12 and E21 cross-polarized transitions. Calculated splitting between optically active parallel- and cross-polarized transitions increases with tube diameter, which compares well with experimental spectroscopic data. PMID:18463293

  5. Three-dimensional polymeric structures of single-wall carbon nanotubes

    SciTech Connect

    Lian, Chao-Sheng; Wang, Jian-Tao

    2014-05-28

    We explore by ab initio calculations the possible crystalline phases of polymerized single-wall carbon nanotubes (P-SWNTs) and determine their structural, elastic, and electronic properties. Based on direct cross-linking and intertube sliding-assisted cross-linking mechanisms, we have identified a series of stable three-dimensional polymeric structures for the zigzag nanotubes up to (10,0). Among proposed P-SWNT phases, the structures with favorable diamond-like sp{sup 3} intertube bonding configuration and small tube cross-section distortion are found to be the most energetically stable ones. These polymeric crystalline phases exhibit high bulk and shear moduli superior to SWNT bundles, and show metallic or semiconducting properties depending on the diameter of constituent tubes. We also propose by hydrostatic pressure simulations that the intertube sliding between van der Waals bonded nanotubes may be an effective route to promote the polymerization of SWNTs under pressure.

  6. Three-particle correlation from a Many-Body Perspective: Trions in a Carbon Nanotube

    NASA Astrophysics Data System (ADS)

    Deilmann, Thorsten; Drüppel, Matthias; Rohlfing, Michael

    2016-05-01

    Trion states of three correlated particles (e.g., two electrons and one hole) are essential to understand the optical spectra of doped or gated nanostructures, like carbon nanotubes or transition-metal dichalcogenides. We develop a theoretical many-body description for such correlated states using an ab initio approach. It can be regarded as an extension of the widely used G W method and Bethe-Salpeter equation, thus allowing for a direct comparison with excitons. We apply this method to a semiconducting (8,0) carbon nanotube, and find that the lowest optically active trions are redshifted by ˜130 meV compared to the excitons, confirming experimental findings for similar tubes. Moreover, our method provides detailed insights in the physical nature of trion states. In the prototypical carbon nanotube we find a variety of different excitations, discuss the spectra, energy compositions, and correlated wave functions.

  7. Scattering strength of potassium on a carbon nanotube with known chirality

    NASA Astrophysics Data System (ADS)

    Tsuchikawa, Ryuichi; Heligman, D.; Blue, B. T.; Zhang, Z. Y.; Ahmadi, A.; Mucciolo, E. R.; Hone, J.; Ishigami, M.

    2016-07-01

    We have measured the scattering strength of charged impurities on a semiconducting single-walled carbon nanotube with known chirality. The resistivity of the nanotube is measured as a function of the density of adsorbed potassium atoms, enabling the determination of the resistance added by an individual potassium atom. Holes are scattered 37 times more efficiently than electrons by an adsorbed potassium atom. The determined scattering strength is used to reveal the spatial extent and depth of the scattering potential for potassium, a model Coulomb adsorbate. Our result represents an essential experimental input to understand adsorbate-induced scattering and provides a crucial step for paving the way to rational design of nanotube-based sensors.

  8. Electronic and magnetic properties of yttrium-doped silicon carbide nanotubes: Density functional theory investigations

    SciTech Connect

    Khaira, Jobanpreet S.; Jain, Richa N.; Chakraborty, Brahmananda; Ramaniah, Lavanya M.

    2015-06-24

    The electronic structure of yttrium-doped Silicon Carbide Nanotubes has been theoretically investigated using first principles density functional theory (DFT). Yttrium atom is bonded strongly on the surface of the nanotube with a binding energy of 2.37 eV and prefers to stay on the hollow site at a distance of around 2.25 Å from the tube. The semi-conducting nanotube with chirality (4, 4) becomes half mettalic with a magnetic moment of 1.0 µ{sub B} due to influence of Y atom on the surface. There is strong hybridization between d orbital of Y with p orbital of Si and C causing a charge transfer from d orbital of the Y atom to the tube. The Fermi level is shifted towards higher energy with finite Density of States for only upspin channel making the system half metallic and magnetic which may have application in spintronic devices.

  9. Carbon nanotube nanoelectrode arrays

    DOEpatents

    Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

    2008-11-18

    The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

  10. Semiconducting boron carbides with better charge extraction through the addition of pyridine moieties

    NASA Astrophysics Data System (ADS)

    Echeverria, Elena; Dong, Bin; Peterson, George; Silva, Joseph P.; Wilson, Ethiyal R.; Sky Driver, M.; Jun, Young-Si; Stucky, Galen D.; Knight, Sean; Hofmann, Tino; Han, Zhong-Kang; Shao, Nan; Gao, Yi; Mei, Wai-Ning; Nastasi, Michael; Dowben, Peter A.; Kelber, Jeffry A.

    2016-09-01

    The plasma-enhanced chemical vapor (PECVD) co-deposition of pyridine and 1,2 dicarbadodecaborane, 1,2-B10C2H12 (orthocarborane) results in semiconducting boron carbide composite films with a significantly better charge extraction than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane alone. The PECVD pyridine/orthocarborane based semiconducting boron carbide composites, with pyridine/orthocarborane ratios ~3:1 or 9:1 exhibit indirect band gaps of 1.8 eV or 1.6 eV, respectively. These energies are less than the corresponding exciton energies of 2.0 eV–2.1 eV. The capacitance/voltage and current/voltage measurements indicate the hole carrier lifetimes for PECVD pyridine/orthocarborane based semiconducting boron carbide composites (3:1) films of ~350 µs compared to values of  ⩽35 µs for the PECVD semiconducting boron carbide films fabricated without pyridine. The hole carrier lifetime values are significantly longer than the initial exciton decay times in the region of ~0.05 ns and 0.27 ns for PECVD semiconducting boron carbide films with and without pyridine, respectively, as suggested by the time-resolved photoluminescence. These data indicate enhanced electron–hole separation and charge carrier lifetimes in PECVD pyridine/orthocarborane based semiconducting boron carbide and are consistent with the results of zero bias neutron voltaic measurements indicating significantly enhanced charge collection efficiency.

  11. Semiconducting boron carbides with better charge extraction through the addition of pyridine moieties

    NASA Astrophysics Data System (ADS)

    Echeverria, Elena; Dong, Bin; Peterson, George; Silva, Joseph P.; Wilson, Ethiyal R.; Sky Driver, M.; Jun, Young-Si; Stucky, Galen D.; Knight, Sean; Hofmann, Tino; Han, Zhong-Kang; Shao, Nan; Gao, Yi; Mei, Wai-Ning; Nastasi, Michael; Dowben, Peter A.; Kelber, Jeffry A.

    2016-09-01

    The plasma-enhanced chemical vapor (PECVD) co-deposition of pyridine and 1,2 dicarbadodecaborane, 1,2-B10C2H12 (orthocarborane) results in semiconducting boron carbide composite films with a significantly better charge extraction than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane alone. The PECVD pyridine/orthocarborane based semiconducting boron carbide composites, with pyridine/orthocarborane ratios ~3:1 or 9:1 exhibit indirect band gaps of 1.8 eV or 1.6 eV, respectively. These energies are less than the corresponding exciton energies of 2.0 eV-2.1 eV. The capacitance/voltage and current/voltage measurements indicate the hole carrier lifetimes for PECVD pyridine/orthocarborane based semiconducting boron carbide composites (3:1) films of ~350 µs compared to values of  ⩽35 µs for the PECVD semiconducting boron carbide films fabricated without pyridine. The hole carrier lifetime values are significantly longer than the initial exciton decay times in the region of ~0.05 ns and 0.27 ns for PECVD semiconducting boron carbide films with and without pyridine, respectively, as suggested by the time-resolved photoluminescence. These data indicate enhanced electron-hole separation and charge carrier lifetimes in PECVD pyridine/orthocarborane based semiconducting boron carbide and are consistent with the results of zero bias neutron voltaic measurements indicating significantly enhanced charge collection efficiency.

  12. Tunneling nanotubes

    PubMed Central

    Austefjord, Magnus Wiger; Gerdes, Hans-Hermann; Wang, Xiang

    2014-01-01

    Tunneling nanotubes (TNTs) are recently discovered thin membranous tubes that interconnect cells. During the last decade, research has shown TNTs to be diverse in morphology and composition, varying between and within cell systems. In addition, the discovery of TNT-like extracellular protrusions, as well as observations of TNTs in vivo, has further enriched our knowledge on the diversity of TNT-like structures. Considering the complex molecular mechanisms underlying the formation of TNTs, as well as their different functions in intercellular communication, it is important to decipher how heterogeneity of TNTs is established, and to address what roles the compositional elements have in the execution of various functions. Here, we review the current knowledge on the morphological and structural diversity of TNTs, and address the relation between the formation, the structure, and the function of TNTs. PMID:24778759

  13. Long term experience with semi-conductive glaze high voltage post insulators

    SciTech Connect

    Baker, A.C.; Maney, J.W.; Szilagyi, Z. )

    1990-01-01

    Insulators using semi-conductive glaze have long been known for their superior contamination performance. Early glazes for this type however were not stable and successful use of semi-conductive glazed porcelain insulators was delayed many years until tin-antimony oxide glazes were developed. Service experience of eighteen years is now available for line and station post insulators with this type of glaze. Based on this experience, the aging characteristics of tin-antimony oxide semi-conductive glazes are described and quantified. Several different applications of these insulators are also described.

  14. Aligned crystalline semiconducting film on a glass substrate and method of making

    DOEpatents

    Findikoglu, Alp T.

    2010-08-24

    A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

  15. Integration of High-Purity Carbon Nanotube Solution into Electronic Devices

    NASA Astrophysics Data System (ADS)

    Tulevski, George; IBM TJ Watson Reserach Center Team

    Due to their exceptional electronic properties, carbon nanotubes (cnt) are leading candidates to be employed as channel materials in future nanoelectronic devices. A key bottleneck to realizing device integration is the sorting of carbon nanotubes, namely the isolation of high-purity, semiconducting cnt solutions. This talk will describe our efforts in using polymer-based sorting methods to isolate high-density and high-purity semiconducting cnt solutions. We explore the dependence of starting material and polymer to cnt ratio on the effectiveness of the separation. We confirm optically and electrically that the semiconducting purity is >99.99% through several thousand individual device measurements. In addition to single-cnt devices, thin-film transistors were also fabricated and tested. Due to the high purity of the solutions, device switching (~105 ION/IOFF) was observed at channel lengths below the percolation threshold (<500 nm). Operating below the percolation threshold allows for devices with much higher current densities and effective mobilities as transport is now the result of direct transport as opposed to hopping between cnts.

  16. Novel carbon nanotube-conjugated polymer nanohybrids produced by multiple polymer processing.

    PubMed

    Stranks, Samuel D; Habisreutinger, Severin N; Dirks, Beate; Nicholas, Robin J

    2013-08-21

    We describe two methods in which we manipulate the binding of multiple conjugated polymers to single-walled carbon nanotubes (SWNTs) to produce new and novel nanostructures. One method fi rst utilizes the selective binding of poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) to a narrow distribution of semiconducting SWNTs and then uses a polymer exchange to transfer this purity to other nanotube-polymer combinations, using technologically useful polymers such as poly(3-hexylthiophene) (P3HT) and poly(9,9'-dioctylfluoreneco -benzothiadiazole) (F8BT) as fi rst examples. The other method involves controlling the competitive binding of P3HT and F8BT to SWNTs to produce coaxial nanostructures consisting of both polymers simultaneously bound in ordered layers. We show that these two simple solution-processing techniques can be carried out sequentially to afford new dual-polymer nanostructures comprised of a semiconducting SWNT of a single chirality. This allows the favorable properties of both polymers and purified semiconducting SWNTs to be implemented into potentially highly efficient organic photovoltaic devices. PMID:24137628

  17. Enhancement and sign inversion of junction magnetoresistance on Mn substitution in magnetite/p-Si heterostructures

    NASA Astrophysics Data System (ADS)

    Aireddy, H.; Das, Amal K.

    2016-10-01

    Fe3-x Mn x O4/p-Si heterostructures (x  =  0, 0.25, and 0.5) were prepared using pulse laser deposition to explore their magneto-electric transport characteristics. All the heterostructures exhibit a rectifying property and junction magnetoresistance of 90% (x  =  0), 117% (x  =  0.25) and 120% (x  =  0.5) at room temperature (300 K), low bias voltage (0 to  -4 V) and low magnetic field (<1 T). Significantly, the sign (positive or negative) of junction magnetoresistance depends on the range of bias voltage for all heterostructures, but for a particular range of voltage, the sign inversion (positive to negative and vice versa) of junction magnetoresistance is observed in the heterostructure of Mn substituted Fe3O4 (Fe3-x Mn x O4) compared to the virgin (Fe3O4) one. The enhancement of junction magnetoresistance and its sign inversion upon Mn substitution in Fe3O4 are assigned to the enhancement of magnetization and the spin filtering at the junction of the heterostructures. The electronic band structure of the Fe3O4/SiO2/p-Si heterostructure and the p-type degenerate semiconducting feature of Mn-substituted Fe3-x Mn x O4 films are considered to explain the results.

  18. Holliday Junction Resolvases

    PubMed Central

    Wyatt, Haley D.M.; West, Stephen C.

    2014-01-01

    Four-way DNA intermediates, called Holliday junctions (HJs), can form during meiotic and mitotic recombination, and their removal is crucial for chromosome segregation. A group of ubiquitous and highly specialized structure-selective endonucleases catalyze the cleavage of HJs into two disconnected DNA duplexes in a reaction called HJ resolution. These enzymes, called HJ resolvases, have been identified in bacteria and their bacteriophages, archaea, and eukaryotes. In this review, we discuss fundamental aspects of the HJ structure and their interaction with junction-resolving enzymes. This is followed by a brief discussion of the eubacterial RuvABC enzymes, which provide the paradigm for HJ resolvases in other organisms. Finally, we review the biochemical and structural properties of some well-characterized resolvases from archaea, bacteriophage, and eukaryotes. PMID:25183833

  19. Wireless Josephson Junction Arrays

    NASA Astrophysics Data System (ADS)

    Adams, Laura

    2015-03-01

    We report low temperature, microwave transmission measurements on a wireless two- dimensional network of Josephson junction arrays composed of superconductor-insulator -superconductor tunnel junctions. Unlike their biased counterparts, by removing all electrical contacts to the arrays and superfluous microwave components and interconnects in the transmission line, we observe new collective behavior in the transmission spectra. In particular we will show emergent behavior that systematically responds to changes in microwave power at fixed temperature. Likewise we will show the dynamic and collective response of the arrays while tuning the temperature at fixed microwave power. We discuss these spectra in terms of the Berezinskii-Kosterlitz-Thouless phase transition and Shapiro steps. We gratefully acknowledge the support Prof. Steven Anlage at the University of Maryland and Prof. Allen Goldman at the University of Minnesota. Physics and School of Engineering and Applied Sciences.

  20. Influence of Electronic Type Purity on the Lithiation of Single-Walled Carbon Nanotubes

    SciTech Connect

    Jaber-Ansari, Laila; Iddir, Hakim; Curtiss, Larry A.; Hersam, Mark C.

    2014-02-08

    Single-walled carbon nanotubes (SWCNTs) have emerged as one of the leading additives for high-capacity nanocomposite lithium ion battery electrodes due to their ability to improve electrode conductivity, current collection efficiency, and charge/discharge rate for high power applications. However, since as-grown SWCNTs possess a distribution of physical and electronic structures, it is of high interest to determine which subpopulations of SWCNTs possess the highest lithiation capacity and to develop processing methods that can enhance the lithiation capacity of underperforming SWCNT species. Toward this end, SWCNT electronic type purity is controlled via density gradient ultracentrifugation, enabling a systematic study of the lithiation of SWCNTs as a function of metal versus semiconducting content. Experimentally, vacuum-filtered freestanding films of metallic SWCNTs are found to accommodate lithium with an order of magnitude higher capacity than their semiconducting counterparts, which is consistent with ab initio molecular dynamics and density functional theory calculations in the limit of isolated SWCNTs. In contrast, SWCNT film densification leads to the enhancement of the lithiation capacity of semiconducting SWCNTs to levels comparable to metallic SWCNTs, which is corroborated by theoretical calculations that show increased lithiation of semiconducting SWCNTs in the limit of small SWCNT*SWCNT spacing. Overall, these results will inform ongoing efforts to utilize SWCNTs as conductive additives in nanocomposite lithium ion battery electrodes.

  1. Thermoelectricity in molecular junctions.

    PubMed

    Reddy, Pramod; Jang, Sung-Yeon; Segalman, Rachel A; Majumdar, Arun

    2007-03-16

    By trapping molecules between two gold electrodes with a temperature difference across them, the junction Seebeck coefficients of 1,4-benzenedithiol (BDT), 4,4'-dibenzenedithiol, and 4,4''-tribenzenedithiol in contact with gold were measured at room temperature to be +8.7 +/- 2.1 microvolts per kelvin (muV/K), +12.9 +/- 2.2 muV/K, and +14.2 +/- 3.2 muV/K, respectively (where the error is the full width half maximum of the statistical distributions). The positive sign unambiguously indicates p-type (hole) conduction in these heterojunctions, whereas the Au Fermi level position for Au-BDT-Au junctions was identified to be 1.2 eV above the highest occupied molecular orbital level of BDT. The ability to study thermoelectricity in molecular junctions provides the opportunity to address these fundamental unanswered questions about their electronic structure and to begin exploring molecular thermoelectric energy conversion. PMID:17303718

  2. Fractional order junctions

    NASA Astrophysics Data System (ADS)

    Machado, J. Tenreiro

    2015-01-01

    Gottfried Leibniz generalized the derivation and integration, extending the operators from integer up to real, or even complex, orders. It is presently recognized that the resulting models capture long term memory effects difficult to describe by classical tools. Leon Chua generalized the set of lumped electrical elements that provide the building blocks in mathematical models. His proposal of the memristor and of higher order elements broadened the scope of variables and relationships embedded in the development of models. This paper follows the two directions and proposes a new logical step, by generalizing the concept of junction. Classical junctions interconnect system elements using simple algebraic restrictions. Nevertheless, this simplistic approach may be misleading in the presence of unexpected dynamical phenomena and requires including additional "parasitic" elements. The novel γ -junction includes, as special cases, the standard series and parallel connections and allows a new degree of freedom when building models. The proposal motivates the search for experimental and real world manifestations of the abstract conjectures.

  3. Carbon nanotube gated lateral resonant tunneling field-effect transistors

    NASA Astrophysics Data System (ADS)

    Wang, D. P.; Perkins, B. R.; Yin, A. J.; Zaslavsky, A.; Xu, J. M.; Beresford, R.; Snider, G. L.

    2005-10-01

    We have produced a lateral resonant tunneling field-effect transistor using a Y-junction multiwalled carbon nanotube as the dual gate on a narrow channel etched from a modulation-doped GaAs /AlGaAs heterostructure. When the Y-junction nanotube is negatively biased, electrons traveling from source to drain along the channel face a voltage-tunable electrostatic double-barrier potential. We measured the three-terminal IDS(VDS,VGS) characteristics of the device at 4.2 K and observed gate-induced structure in the transconductance and negative differential resistance in the drain current. We interpret the data in terms of resonant tunneling through one-dimensional subbands confined by a self-consistently calculated electrostatic potential.

  4. A route to brightly fluorescent carbon nanotubes for near-infrared imaging in mice.

    PubMed

    Welsher, Kevin; Liu, Zhuang; Sherlock, Sarah P; Robinson, Joshua Tucker; Chen, Zhuo; Daranciang, Dan; Dai, Hongjie

    2009-11-01

    The near-infrared photoluminescence intrinsic to semiconducting single-walled carbon nanotubes is ideal for biological imaging owing to the low autofluorescence and deep tissue penetration in the near-infrared region beyond 1 microm. However, biocompatible single-walled carbon nanotubes with high quantum yield have been elusive. Here, we show that sonicating single-walled carbon nanotubes with sodium cholate, followed by surfactant exchange to form phospholipid-polyethylene glycol coated nanotubes, produces in vivo imaging agents that are both bright and biocompatible. The exchange procedure is better than directly sonicating the tubes with the phospholipid-polyethylene glycol, because it results in less damage to the nanotubes and improves the quantum yield. We show whole-animal in vivo imaging using an InGaAs camera in the 1-1.7 microm spectral range by detecting the intrinsic near-infrared photoluminescence of the 'exchange' single-walled carbon nanotubes at a low dose (17 mg l(-1) injected dose). The deep tissue penetration and low autofluorescence background allowed high-resolution intravital microscopy imaging of tumour vessels beneath thick skin. PMID:19893526

  5. Nanotubes from Oxide-Based Misfit Family: The Case of Calcium Cobalt Oxide.

    PubMed

    Panchakarla, Leela S; Lajaunie, Luc; Ramasubramaniam, Ashwin; Arenal, Raul; Tenne, Reshef

    2016-06-28

    Misfit layered compounds (MLCs) have generated significant interest in recent years as potential thermoelectric materials. MLC nanotubes could reveal behavior that is entirely different from the bulk material. Recently, new chemical strategies were exploited for the synthesis of nanotubular forms of chalcogenide-based MLCs, which are promising candidates for thermoelectric materials. However, analogous synthesis of oxide-based MLC nanotubes has not been demonstrated until now. Here, we report a chemical strategy for synthesis of cobalt-oxide-based misfit nanotubes. A combination of high-resolution (scanning) transmission electron microscopy (including image simulations), spatially resolved electron energy-loss spectroscopy, electron diffraction, and density functional theory (DFT) calculations is used to discover the formation of a phase within these nanotubes that differs significantly from bulk calcium cobaltite MLCs. Furthermore, DFT calculations show that this phase is semiconducting with a band gap in excess of 1 eV, unlike bulk calcium cobaltite MLCs, which are known to be metallic. Through systematic experiments, we propose a formation mechanism for these nanotubes that could also apply more generally to realizing other oxide-based MLC nanotubes. PMID:27215812

  6. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

    PubMed

    Cao, Xuan; Cao, Yu; Zhou, Chongwu

    2016-01-26

    Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (<3 g/m(2)), and good mechanical robustness (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

  7. Titania nanotubes from weak organic acid electrolyte: fabrication, characterization and oxide film properties.

    PubMed

    Munirathinam, Balakrishnan; Neelakantan, Lakshman

    2015-04-01

    In this study, TiO2 nanotubes were fabricated using anodic oxidation in fluoride containing weak organic acid for different durations (0.5h, 1h, 2h and 3h). Scanning electron microscope (SEM) micrographs reveal that the morphology of titanium oxide varies with anodization time. Raman spectroscopy and X-ray diffraction (XRD) results indicate that the as-formed oxide nanotubes were amorphous in nature, yet transform into crystalline phases (anatase and rutile) upon annealing at 600°C. Wettability measurements show that both as-formed and annealed nanotubes exhibited hydrophilic behavior. The electrochemical behavior was ascertained by DC polarization and AC electrochemical impedance spectroscopy (EIS) measurements in 0.9% NaCl solution. The results suggest that the annealed nanotubes showed higher impedance (10(5)-10(6)Ωcm(2)) and lower passive current density (10(-7)Acm(-2)) than the as-formed nanotubes. In addition, we investigated the influence of post heat treatment on the semiconducting properties of the oxides by capacitance measurements. In vitro bioactivity test in simulated body fluid (SBF) showed that precipitation of Ca/P is easier in crystallized nanotubes than the amorphous structure. Our study uses a simple strategy to prepare nano-structured titania films and hints the feasibility of tailoring the oxide properties by thermal treatment, producing surfaces with better bioactivity.

  8. Controlling the Physical Dimensions of Peptide Nanotubes by Supramolecular Polymer Coassembly.

    PubMed

    Adler-Abramovich, Lihi; Marco, Pini; Arnon, Zohar A; Creasey, Rhiannon C G; Michaels, Thomas C T; Levin, Aviad; Scurr, David J; Roberts, Clive J; Knowles, Tuomas P J; Tendler, Saul J B; Gazit, Ehud

    2016-08-23

    Molecular self-assembly of peptides into ordered nanotubes is highly important for various technological applications. Very short peptide building blocks, as short as dipeptides, can form assemblies with unique mechanical, optical, piezoelectric, and semiconductive properties. Yet, the control over nanotube length in solution has remained challenging, due to the inherent sequential self-assembly mechanism. Here, in line with polymer chemistry paradigms, we applied a supramolecular polymer coassembly methodology to modulate peptide nanotube elongation. Utilizing this approach, we achieved a narrow, controllable nanotube length distribution by adjusting the molecular ratio of the diphenylalanine assembly unit and its end-capped analogue. Kinetic analysis suggested a slower coassembly organization process as compared to the self-assembly dynamics of each of the building blocks separately. This is consistent with a hierarchal arrangement of the peptide moieties within the coassemblies. Mass spectrometry analysis demonstrated the bimolecular composition of the coassembled nanostructures. Moreover, the peptide nanotubes' length distribution, as determined by electron microscopy, was shown to fit a fragmentation kinetics model. Our results reveal a simple and efficient mechanism for the control of nanotube sizes through the coassembly of peptide entities at various ratios, allowing for the desired end-product formation. This dynamic size control offers tools for molecular engineering at the nanoscale exploiting the advantages of molecular coassembly. PMID:27351519

  9. Bright, long-lived and coherent excitons in carbon nanotube quantum dots

    NASA Astrophysics Data System (ADS)

    Hofmann, Matthias S.; Glückert, Jan T.; Noé, Jonathan; Bourjau, Christian; Dehmel, Raphael; Högele, Alexander

    2013-07-01

    Carbon nanotubes exhibit a wealth of unique physical properties. By virtue of their exceptionally low mass and extreme stiffness they provide ultrahigh-quality mechanical resonances, promise long electron spin coherence times in a nuclear-spin free lattice for quantum information processing and spintronics, and feature unprecedented tunability of optical transitions for optoelectronic applications. Excitons in semiconducting single-walled carbon nanotubes could facilitate the upconversion of spin, mechanical or hybrid spin-mechanical degrees of freedom to optical frequencies for efficient manipulation and detection. However, successful implementation of such schemes with carbon nanotubes has been impeded by rapid exciton decoherence at non-radiative quenching sites, environmental dephasing and emission intermittence. Here we demonstrate that these limitations may be overcome by exciton localization in suspended carbon nanotubes. For excitons localized in nanotube quantum dots we found narrow optical lines free of spectral wandering, radiative exciton lifetimes and effectively suppressed blinking. Our findings identify the great potential of localized excitons for efficient and spectrally precise interfacing of photons, phonons and spins in novel carbon nanotube-based quantum devices.

  10. Controlling the Physical Dimensions of Peptide Nanotubes by Supramolecular Polymer Coassembly.

    PubMed

    Adler-Abramovich, Lihi; Marco, Pini; Arnon, Zohar A; Creasey, Rhiannon C G; Michaels, Thomas C T; Levin, Aviad; Scurr, David J; Roberts, Clive J; Knowles, Tuomas P J; Tendler, Saul J B; Gazit, Ehud

    2016-08-23

    Molecular self-assembly of peptides into ordered nanotubes is highly important for various technological applications. Very short peptide building blocks, as short as dipeptides, can form assemblies with unique mechanical, optical, piezoelectric, and semiconductive properties. Yet, the control over nanotube length in solution has remained challenging, due to the inherent sequential self-assembly mechanism. Here, in line with polymer chemistry paradigms, we applied a supramolecular polymer coassembly methodology to modulate peptide nanotube elongation. Utilizing this approach, we achieved a narrow, controllable nanotube length distribution by adjusting the molecular ratio of the diphenylalanine assembly unit and its end-capped analogue. Kinetic analysis suggested a slower coassembly organization process as compared to the self-assembly dynamics of each of the building blocks separately. This is consistent with a hierarchal arrangement of the peptide moieties within the coassemblies. Mass spectrometry analysis demonstrated the bimolecular composition of the coassembled nanostructures. Moreover, the peptide nanotubes' length distribution, as determined by electron microscopy, was shown to fit a fragmentation kinetics model. Our results reveal a simple and efficient mechanism for the control of nanotube sizes through the coassembly of peptide entities at various ratios, allowing for the desired end-product formation. This dynamic size control offers tools for molecular engineering at the nanoscale exploiting the advantages of molecular coassembly.

  11. Nonmagnetic carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lipert, Kamil; Kretzschmar, Florian; Ritschel, Manfred; Leonhardt, Albrecht; Klingeler, Rüdiger; Büchner, Bernd

    2009-03-01

    We have synthesized by chemical vapor deposition (CVD) single-, double-, and multiwalled carbon nanotubes without magnetic impurities. In particular, we have applied a rhenium-based CVD technique yielding nonmagnetic carbon nanotubes with diamagnetic Re particles. In addition, carbon nanotubes prepared with iron as catalyst particles are annealed at very high temperatures in which the catalyst material is completely vaporized, while the carbon nanotubes are structurally preserved. Detailed magnetic studies show for both approaches a clear diamagnetic behavior typical for pure carbon nanotubes but no indication of ferromagnetic or paramagnetic material.

  12. Structure of boron nitride nanotubes

    SciTech Connect

    Buranova, Yu. S. Kulnitskiy, B. A.; Perezhogin, I. A.; Blank, V. D.

    2015-01-15

    The crystallographic structure of boron nitride nanotubes has been investigated. Various defects that may arise during nanotube synthesis are revealed by electron microscopy. Nanotubes with different numbers of walls and different diameters are modeled by molecular dynamics methods. Structural features of single-wall nanotubes are demonstrated. The causes of certain defects in multiwall nanotubes are indicated.

  13. Room temperature spin valve effect in NiFe/WS2/Co junctions

    PubMed Central

    Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood

    2016-01-01

    The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes. PMID:26868638

  14. Room temperature spin valve effect in NiFe/WS2/Co junctions

    NASA Astrophysics Data System (ADS)

    Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood

    2016-02-01

    The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.

  15. Room temperature spin valve effect in NiFe/WS₂/Co junctions.

    PubMed

    Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Siddique, Salma; Khan, Muhammad Farooq; Ramay, Shahid Mahmood

    2016-01-01

    The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes. PMID:26868638

  16. Functionalized Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Lebron, Marisabel; Mintz, Eric; Meador, Michael A.; Hull, David R.; Scheiman, Daniel A.; Willis, Peter; Smalley, Richard E.

    2001-01-01

    Carbon nanotubes have created a great deal of excitement in the Materials Science community because of their outstanding mechanical, electrical, and thermal properties. Use of carbon nanotubes as reinforcements for polymers could lead to a new class of composite materials with properties, durability, and performance far exceeding that of conventional fiber reinforced composites. Organized arrays of carbon nanotubes, e.g., nanotube monolayers, could find applications as thermal management materials, light emitting devices, and sensor arrays. Carbon nanotubes could also be used as templates upon which nanotubes from other materials could be constructed. Successful use of carbon nanotubes in any of these potential applications requires the ability to control the interactions of nanotubes with each other and with other materials, e.g., a polymer matrix. One approach to achieving this control is to attach certain chemical groups to the ends and/or side-walls of the nanotubes. The nature of these chemical groups can be varied to achieve the desired result, such as better adhesion between the nanotubes and a polymer. Under a joint program between NASA Glenn, Clark Atlanta University, and Rice University researchers are working on developing a chemistry "tool-kit" that will enable the functionalization of carbon nanotubes with a variety of chemical groups. Recent results of this effort will be discussed.

  17. High frequency nanotube oscillator

    DOEpatents

    Peng, Haibing; Zettl, Alexander K.

    2012-02-21

    A tunable nanostructure such as a nanotube is used to make an electromechanical oscillator. The mechanically oscillating nanotube can be provided with inertial clamps in the form of metal beads. The metal beads serve to clamp the nanotube so that the fundamental resonance frequency is in the microwave range, i.e., greater than at least 1 GHz, and up to 4 GHz and beyond. An electric current can be run through the nanotube to cause the metal beads to move along the nanotube and changing the length of the intervening nanotube segments. The oscillator can operate at ambient temperature and in air without significant loss of resonance quality. The nanotube is can be fabricated in a semiconductor style process and the device can be provided with source, drain, and gate electrodes, which may be connected to appropriate circuitry for driving and measuring the oscillation. Novel driving and measuring circuits are also disclosed.

  18. Topological end states due to inhomogeneous strains in wrinkled semiconducting ribbons

    NASA Astrophysics Data System (ADS)

    Pandey, Sudhakar; Ortix, Carmine

    2016-05-01

    We show that curvature-induced inhomogeneous strain distributions in nanoscale buckled semiconducting ribbons lead to the existence of end states which are topologically protected by inversion symmetry. These end-state doublets, corresponding to the so-called Maue-Shockley states, are robust against weak disorder. By identifying and calculating the corresponding topological invariants, we further show that a buckled semiconducting ribbon undergoes topological phase transitions between trivial and nontrivial insulating phases by varying its real-space geometry.

  19. Signatures of topological Josephson junctions

    NASA Astrophysics Data System (ADS)

    Peng, Yang; Pientka, Falko; Berg, Erez; Oreg, Yuval; von Oppen, Felix

    2016-08-01

    Quasiparticle poisoning and diabatic transitions may significantly narrow the window for the experimental observation of the 4 π -periodic dc Josephson effect predicted for topological Josephson junctions. Here, we show that switching-current measurements provide accessible and robust signatures for topological superconductivity which persist in the presence of quasiparticle poisoning processes. Such measurements provide access to the phase-dependent subgap spectrum and Josephson currents of the topological junction when incorporating it into an asymmetric SQUID together with a conventional Josephson junction with large critical current. We also argue that pump-probe experiments with multiple current pulses can be used to measure the quasiparticle poisoning rates of the topological junction. The proposed signatures are particularly robust, even in the presence of Zeeman fields and spin-orbit coupling, when focusing on short Josephson junctions. Finally, we also consider microwave excitations of short topological Josephson junctions which may complement switching-current measurements.

  20. Excitons in semiconducting superlattices, quantum wells, and ternary alloys

    SciTech Connect

    Sturge, M.D. ); Nahory, R.E.; Tamargo, M.C. )

    1991-08-15

    It is now possible to fabricate semiconducting layered structures with precisely defined layer thicknesses down to one monolayer (two atomic diameters). An example is the superlattice'' (SL) structure, in which two semiconductors with different band gaps are interleaved. The electronic properties of the SL are quite different from those of the constitutents and offer interesting new possibilities both in device design and in basic physics. This proposal aims to improve our understanding of optically excited states ( excitons'' and electron-hole plasmas'') in a particular class of these structures: the so-called Type 2 indirect'' SL's in which the electron and hole created by optical excitation are separated both in real and in momoentum space. Time-resolved tunable laser spectroscopy, with and without external perturbations such as magnetic field, electric field, and uniaxial stress, are used principally to study the following phenomena. 1. Exciton states in SLs with only a few atomic layers per period, for which the familiar effective mass model'' of semiconductor states breaks down. 2. The electron-hole plasma which forms when the excitation density is high. This plasma may be in a liquid state at low temperatures. In the short period superlattices are our primary concern, electrons and holes are spatially separated, leading to internal electric fields which might be expected to have a pronounced effect on the plasma properties.