Effectiveness of X-ray grating interferometry for non-destructive inspection of packaged devices

NASA Astrophysics Data System (ADS)

Uehara, Masato; Yashiro, Wataru; Momose, Atsushi

2013-10-01

It is difficult to inspect packaged devices such as IC packages and power modules because the devices contain various components, such as semiconductors, metals, ceramics, and resin. In this paper, we demonstrated the effectiveness of X-ray grating interferometry (XGI) using a laboratory X-ray tube for the industrial inspection of packaged devices. The obtained conventional absorption image showed heavy-elemental components such as metal wires and electrodes, but the image did not reveal the defects in the light-elemental components. On the other hand, the differential phase-contrast image obtained by XGI revealed microvoids and scars in the encapsulant of the samples. The visibility contrast image also obtained by XGI showed some cracks in the ceramic insulator of power module sample. In addition, the image showed the silicon plate surrounded by the encapsulant having the same X-ray absorption coefficient. While these defects and components are invisible in the conventional industrial X-ray imaging, XGI thus has an attractive potential for the industrial inspection of the packaged devices.

Technological and organizational diversity and technical advance in the early history of the American semiconductor industry

NASA Astrophysics Data System (ADS)

Cohen, W.; Holbrook, D.; Klepper, S.

1994-06-01

This study examines the early years of the semiconductor industry and focuses on the roles played by different size firms in technologically innovative processes. A large and diverse pool of firms participated in the growth of the industry. Three related technological areas were chosen for in-depth analysis: integrated circuits, materials technology, and device packaging. Large business producing vacuum tubes dominated the early production of semiconductor devices. As the market for new devices grew during the 1950's, new firms were founded and existing firms from other industries, e.g. aircraft builders and instrument makers, began to pursue semiconductor electronics. Small firms began to cater to the emerging industry by supplying materials and equipment. These firms contributed to the development of certain aspects of one thousand firms that were playing some part in the semiconductor industry.

Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

NASA Technical Reports Server (NTRS)

Wagner, L. J.

1977-01-01

The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

TiO2-Based Nanoheterostructures for Promoting Gas Sensitivity Performance: Designs, Developments, and Prospects

PubMed Central

Wang, Yuan; Wu, Tao; Zhou, Yun; Meng, Chuanmin; Zhu, Wenjun; Liu, Lixin

2017-01-01

Gas sensors based on titanium dioxide (TiO2) have attracted much public attention during the past decades due to their excellent potential for applications in environmental pollution remediation, transportation industries, personal safety, biology, and medicine. Numerous efforts have therefore been devoted to improving the sensing performance of TiO2. In those effects, the construct of nanoheterostructures is a promising tactic in gas sensing modification, which shows superior sensing performance to that of the single component-based sensors. In this review, we briefly summarize and highlight the development of TiO2-based heterostructure gas sensing materials with diverse models, including semiconductor/semiconductor nanoheterostructures, noble metal/semiconductor nanoheterostructures, carbon-group-materials/semiconductor nano- heterostructures, and organic/inorganic nanoheterostructures, which have been investigated for effective enhancement of gas sensing properties through the increase of sensitivity, selectivity, and stability, decrease of optimal work temperature and response/recovery time, and minimization of detectable levels. PMID:28846621

A hybrid life cycle inventory of nano-scale semiconductor manufacturing.

PubMed

Krishnan, Nikhil; Boyd, Sarah; Somani, Ajay; Raoux, Sebastien; Clark, Daniel; Dornfeld, David

2008-04-15

The manufacturing of modern semiconductor devices involves a complex set of nanoscale fabrication processes that are energy and resource intensive, and generate significant waste. It is important to understand and reduce the environmental impacts of semiconductor manufacturing because these devices are ubiquitous components in electronics. Furthermore, the fabrication processes used in the semiconductor industry are finding increasing application in other products, such as microelectromechanical systems (MEMS), flat panel displays, and photovoltaics. In this work we develop a library of typical gate-to-gate materials and energy requirements, as well as emissions associated with a complete set of fabrication process models used in manufacturing a modern microprocessor. In addition, we evaluate upstream energy requirements associated with chemicals and materials using both existing process life cycle assessment (LCA) databases and an economic input-output (EIO) model. The result is a comprehensive data set and methodology that may be used to estimate and improve the environmental performance of a broad range of electronics and other emerging applications that involve nano and micro fabrication.

Cancer and reproductive risks in the semiconductor industry.

PubMed

LaDou, Joseph; Bailar, John C

2007-01-01

Although many reproductive toxicants and carcinogens are used in the manufacture of semiconductor chips, and worrisome findings have been reported, no broad epidemiologic study has been conducted to define possible risks in a comprehensive way. With few exceptions, the American semiconductor industry has not supported access for independent studies. Older technologies are exported to newly industrialized countries as newer technologies are installed in Japan, the United States, and Europe. Thus there is particular concern about the many workers, mostly in countries that are still industrializing, who have jobs that use chemicals, technologies, and equipment that are no longer in use in developed countries. Since most countries lack cancer registries and have inadequate reproductive and cancer reporting mechanisms, industry efforts to control exposures to carcinogens are of particular importance. Government agencies, the courts, industry, publishers, and academia, on occasion, collude to ignore or to downplay the importance of occupational diseases. Examples of how this happens in the semiconductor industry are presented.

Novel nano-semiconductor film layer supported nano-Pd Complex Nanostructured Catalyst Pd/Ⓕ-MeOx/AC for High Efficient Selective Hydrogenation of Phenol to Cyclohexanone.

PubMed

Si, Jiaqi; Ouyang, Wenbing; Zhang, Yanji; Xu, Wentao; Zhou, Jicheng

2017-04-28

Supported metal as a type of heterogeneous catalysts are the most widely used in industrial processes. High dispersion of the metal particles of supported catalyst is a key factor in determining the performance of such catalysts. Here we report a novel catalyst Pd/Ⓕ-MeO x /AC with complex nanostructured, Pd nanoparticles supported on the platelike nano-semiconductor film/activated carbon, prepared by the photocatalytic reduction method, which exhibited high efficient catalytic performance for selective hydrogenation of phenol to cyclohexanone. Conversion of phenol achieved up to more than 99% with a lower mole ratio (0.5%) of active components Pd and phenol within 2 h at 70 °C. The synergistic effect of metal nanoparticles and nano-semiconductors support layer and the greatly increasing of contact interface of nano-metal-semiconductors may be responsible for the high efficiency. This work provides a clear demonstration that complex nanostructured catalysts with nano-metal and nano-semiconductor film layer supported on high specific surface AC can yield enhanced catalytic activity and can afford promising approach for developing new supported catalyst.

Health and safety executive inspection of U.K. semiconductor manufacturers.

PubMed

Watterson, Andrew; LaDou, Joseph

2003-01-01

Europe plays a major role in the international semiconductor industry, but has conducted few studies of the occupational health of its workers. An exception is in the United Kingdom, where, in two small studies, the Health and Safety Executive (HSE) evaluated some health effects of semiconductor work. Neither of these studies, largely restricted to Scotland, produced definitive results, and both were misused by industry to assert that they demonstrated no adverse health effect on workers. The results of the studies prompted semiconductor industry inspections recently completed by the HSE that included chip manufacturers in Scotland and other U.K. areas. The results of these inspections are disappointing.

Physics Careers in the Semiconductor Industry: OK, I'm in, now what?

NASA Astrophysics Data System (ADS)

Larson, Larry

2003-03-01

The role of the physicist working in the Semiconductor Industry differs significantly from those working in a purely academic setting. This talk will give a perspective on these differences by examining these roles in some detail. The first detail is simply ``Why are you employed by your institution?" Physicists in the Semiconductor industry are, in the most basic sense, employed to develop or sustain processes, equipment or devices in order to produce chips for sale. This very basic point colors the goals, objectives and the reward structure for the industrial physicist. I will use examples of mundane and complex physics applications from development work at SEMATECH to compare the industrial approach to my perception of an academic approach. Another important attribute of the industrial career is the strong influence of timeliness on the usefulness of our results. This leads to an emphasis of the working approach on attacking problems as a team, to the strong availability of resources, but also to the aspect that a project can fall away from the critical path and be cancelled. Some of these effects will be described with examples from the International Technology Roadmap for Semiconductors and also from SEMATECH. All in all, working as a physicist in the semiconductor industry is an exciting and rewarding career. Be aware though, that the industry is dynamic and intensive be ready for a ride!

Polycrystalline silicon availability for photovoltaic and semiconductor industries

NASA Technical Reports Server (NTRS)

Ferber, R. R.; Costogue, E. N.; Pellin, R.

1982-01-01

Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

Synthesis of Polyimides Produced from Novel High Temperature Polyhedral Oligomeric Silsesquioxane Dianilines

DTIC Science & Technology

2009-03-26

spacecraft materials including solar arrays, thermal insulation blankets , and space inflatable structures, and in components in modern aircraft. PIs are...well known for their thermal stability but are prone to long-term oxidative degadation and are notorious for having hygrothermal issues, especially...applications such as circuit-printing 61ms and semiconductor coatings in the micmle~tronics industry1, spacecraft materials2 including solar arrays, thennal

Hypersonic Composites Resist Extreme Heat and Stress

NASA Technical Reports Server (NTRS)

2007-01-01

Through research contracts with NASA, Materials and Electrochemical Research Corporation (MER), of Tucson, Arizona, contributed a number of technologies to record-breaking hypersonic flights. Through this research, MER developed a coating that successfully passed testing to simulate Mach 10 conditions, as well as provide several additional carbon-carbon (C-C) composite components for the flights. MER created all of the leading edges for the X-43A test vehicles at Dryden-considered the most critical parts of this experimental craft. In addition to being very heat resistant, the coating had to be very lightweight and thin, as the aircraft was designed to very precise specifications and could not afford to have a bulky coating. MER patented its carbon-carbon (C-C) composite process and then formed a spinoff company, Frontier Materials Corporation (FMC), also based in Tucson. FMC is using the patent in conjunction with low-cost PAN (polyacrylonitrile)-based fibers to introduce these materials to the commercial markets. The C-C composites are very lightweight and exceptionally strong and stiff, even at very high temperatures. The composites have been used in industrial heating applications, the automotive and aerospace industries, as well as in glass manufacturing and on semiconductors. Applications also include transfer components for glass manufacturing and structural members for carrier support in semiconductor processing.

Health risk in the offspring of female semiconductor workers.

PubMed

Lin, Ching-Chun; Wang, Jung-Der; Hsieh, Gong-Yih; Chang, Yu-Yin; Chen, Pau-Chung

2008-09-01

There are no published studies focusing on adverse birth outcomes or infant mortality in the semiconductor industry. To investigate whether female workers have higher risks of any adverse birth outcome or death from congenital malformation. A total of 27,610 female workers had been employed in eight semiconductor companies in Taiwan between 1980 and 2000. Using the national birth registry, their live born children were identified, and then any deaths under 5 years of age with or without congenital malformations were identified by linking with the national death registry. Periconceptional exposure was defined as the mother having been employed in the semiconductor industry 3 months before and 3 months after conception of the live born infants. A total of 24,223 live births were included. No significant association between adverse birth outcomes or death with congenital malformation and maternal employment in semiconductor industry was found either in the period of 1980-94 or 1995-2000. There is no convincing evidence that female workers employed during the periconceptional period in the semiconductor industry had higher risks of having adverse birth outcomes or death due to congenital malformations. However, prospective research is warranted to confirm these findings.

Quantifying aluminum and semiconductor industry perfluorocarbon emissions from atmospheric measurements

NASA Astrophysics Data System (ADS)

Kim, Jooil; Fraser, Paul J.; Li, Shanlan; Mühle, Jens; Ganesan, Anita L.; Krummel, Paul B.; Steele, L. Paul; Park, Sunyoung; Kim, Seung-Kyu; Park, Mi-Kyung; Arnold, Tim; Harth, Christina M.; Salameh, Peter K.; Prinn, Ronald G.; Weiss, Ray F.; Kim, Kyung-Ryul

2014-07-01

The potent anthropogenic perfluorocarbon greenhouse gases tetrafluoromethane (CF4) and hexafluoroethane (C2F6) are emitted to the atmosphere mainly by the aluminum and semiconductor industries. Global emissions of these perfluorocarbons (PFCs) calculated from atmospheric measurements are significantly greater than expected from reported national and industry-based emission inventories. In this study, in situ measurements of the two PFCs in the Advanced Global Atmospheric Gases Experiment network are used to show that their emission ratio varies according to the relative regional presence of these two industries, providing an industry-specific emission "signature" to apportion the observed emissions. Our results suggest that underestimated emissions from the global semiconductor industry during 1990-2010, as well as from China's aluminum industry after 2002, account for the observed differences between emissions based on atmospheric measurements and on inventories. These differences are significant despite the large uncertainties in emissions based on the methodologies used by these industries.

Regulation of occupational health and safety in the semiconductor industry: enforcement problems and solutions.

PubMed

Watterson, Andrew

2006-01-01

Reports of high incidences of occupational illnesses in the semiconductor industry should have triggered global investigations and rigorous inspection of the industry. Yet semiconductor plants remain essentially unregulated. Health and safety standards are inadequate and enforcement is lax. Roles for stakeholders in laying down good practice, monitoring, and regulating are proposed, and obstacles are described. Effective regulation has advantages for the industry as well as workers. Conditions for best practice include education at all levels, protection and support for labor inspectors, government commitment to enforcing laws, recognition of the right of workers to organize, and recognition of their rights.

Oxide semiconductor thin-film transistors: a review of recent advances.

PubMed

Fortunato, E; Barquinha, P; Martins, R

2012-06-12

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A study for safety and health management problem of semiconductor industry in Taiwan.

PubMed

Chao, Chin-Jung; Wang, Hui-Ming; Feng, Wen-Yang; Tseng, Feng-Yi

2008-12-01

The main purpose of this study is to discuss and explore the safety and health management in semiconductor industry. The researcher practically investigates and interviews the input, process and output of the safety and health management of semiconductor industry by using the questionnaires and the interview method which is developed according to the framework of the OHSAS 18001. The result shows that there are six important factors for the safety and health management in Taiwan semiconductor industry. 1. The company should make employee clearly understand the safety and health laws and standards. 2. The company should make the safety and health management policy known to the public. 3. The company should put emphasis on the pursuance of the safety and health management laws. 4. The company should prevent the accidents. 5. The safety and health message should be communicated sufficiently. 6. The company should consider safety and health norm completely.

Leukemia and non-Hodgkin lymphoma in semiconductor industry workers in Korea.

PubMed

Kim, Inah; Kim, Hyun J; Lim, Sin Y; Kongyoo, Jungok

2012-01-01

Reports of leukemia and non-Hodgkin lymphoma (NHL), cancers known to have a similar pathophysiology, among workers in the semiconductor industry have generated much public concern in Korea. This paper describes cases reported to the NGO Supporters for the Health and Rights of People in the Semiconductor Industry (SHARPs). We identified demographic characteristics, occupational, and disease history, for 17 leukemia and NHL cases from the Giheung Samsung semiconductor plant, diagnosed from November 2007 to January 2011. Patients were relatively young (mean = 28·5 years, SD = 6·5) at the time of diagnosis and the mean latency period was 104·3 months (SD = 65·8). Majority of the cases were fabrication operators (11 workers among 17) and 12 were hired before 2000. Six cases worked in the etching or diffusion process. The evidence to confirm the causal relationship between exposures in the semiconductor industry and leukemia or NHL remains insufficient and a more formal, independent study of the exposure-disease relationship in this occupation is needed. However, workers should be protected from the potential exposures immediately.

QM/QM approach to model energy disorder in amorphous organic semiconductors.

PubMed

Friederich, Pascal; Meded, Velimir; Symalla, Franz; Elstner, Marcus; Wenzel, Wolfgang

2015-02-10

It is an outstanding challenge to model the electronic properties of organic amorphous materials utilized in organic electronics. Computation of the charge carrier mobility is a challenging problem as it requires integration of morphological and electronic degrees of freedom in a coherent methodology and depends strongly on the distribution of polaron energies in the system. Here we represent a QM/QM model to compute the polaron energies combining density functional methods for molecules in the vicinity of the polaron with computationally efficient density functional based tight binding methods in the rest of the environment. For seven widely used amorphous organic semiconductor materials, we show that the calculations are accelerated up to 1 order of magnitude without any loss in accuracy. Considering that the quantum chemical step is the efficiency bottleneck of a workflow to model the carrier mobility, these results are an important step toward accurate and efficient disordered organic semiconductors simulations, a prerequisite for accelerated materials screening and consequent component optimization in the organic electronics industry.

Emission factors of air toxics from semiconductor manufacturing in Korea.

PubMed

Eom, Yun-Sung; Hong, Ji-Hyung; Lee, Suk-Jo; Lee, Eun-Jung; Cha, Jun-Seok; Lee, Dae-Gyun; Bang, Sun-Ae

2006-11-01

The development of local, accurate emission factors is very important for the estimation of reliable national emissions and air quality management. For that, this study is performed for pollutants released to the atmosphere with source-specific emission tests from the semiconductor manufacturing industry. The semiconductor manufacturing industry is one of the major sources of air toxics or hazardous air pollutants (HAPs); thus, understanding the emission characteristics of the emission source is a very important factor in the development of a control strategy. However, in Korea, there is a general lack of information available on air emissions from the semiconductor industry. The major emission sources of air toxics examined from the semiconductor manufacturing industry were wet chemical stations, coating applications, gaseous operations, photolithography, and miscellaneous devices in the wafer fabrication and semiconductor packaging processes. In this study, analyses of emission characteristics, and the estimations of emission data and factors for air toxics, such as acids, bases, heavy metals, and volatile organic compounds from the semiconductor manufacturing process have been performed. The concentration of hydrogen chloride from the packaging process was the highest among all of the processes. In addition, the emission factor of total volatile organic compounds (TVOCs) for the packaging process was higher than that of the wafer fabrication process. Emission factors estimated in this study were compared with those of Taiwan for evaluation, and they were found to be of similar level in the case of TVOCs and fluorine compounds.

Pioneering University/Industry Venture Explores VLSI Frontiers.

ERIC Educational Resources Information Center

Davis, Dwight B.

1983-01-01

Discusses industry-sponsored programs in semiconductor research, focusing on Stanford University's Center for Integrated Systems (CIS). CIS, while pursuing research in semiconductor very-large-scale integration, is merging the fields of computer science, information science, and physical science. Issues related to these university/industry…

Controlling Gas-Flow Mass Ratios

NASA Technical Reports Server (NTRS)

Morris, Brian G.

1990-01-01

Proposed system automatically controls proportions of gases flowing in supply lines. Conceived for control of oxidizer-to-fuel ratio in new gaseous-propellant rocket engines. Gas-flow control system measures temperatures and pressures at various points. From data, calculates control voltages for electronic pressure regulators for oxygen and hydrogen. System includes commercially available components. Applicable to control of mass ratios in such gaseous industrial processes as chemical-vapor depostion of semiconductor materials and in automotive engines operating on compressed natural gas.

Au-decorated sodium titanate nanotubes as high-performance selective photocatalysts for pollutant degradation

NASA Astrophysics Data System (ADS)

El Rouby, Waleed M. A.; Comesaña-Hermo, Miguel; Testa-Anta, Martín; Carbó-Argibay, Enrique; Salgueiriño, Verónica; Pérez-Lorenzo, Moisés; Correa-Duarte, Miguel A.

2017-04-01

The bioaccumulation of polycyclic aromatic compounds originating from textile processing industries is nowadays a major environmental problem worldwide. In order to tackle this situation, several inorganic semiconductors have been tested as photocatalysts for the degradation of these harmful pollutants in the search of sustainable and cost-effective solutions. Nevertheless, these semiconductor materials often involve important limitations, such as poor efficiency and selectivity, which, in the end, substantially restrict their implementation at the industrial scale. As an alternative, we herein report the fabrication and application of Au-decorated titanate nanotubes (TNTs) as high-performance architectures for the selective degradation of organic contaminants. This synthetic strategy is intended to establish a synergetic integration of the physicochemical and photocatalytic features of these hybrid nanostructures, by combining the remarkable adsorption capabilities of TNTs with the enhanced light-harvesting efficiency provided by the incorporation of a noble metal component. The obtained results evidence the great potential that rationally designed plasmonic composites may have for the development of selective environmental remediation technologies and in particular on the current challenges faced by the wastewater treatment sector.

The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers.

PubMed

Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun

2009-04-01

This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 microg/L).

Ergonomic risk factors of work processes in the semiconductor industry in Peninsular Malaysia.

PubMed

Chee, Heng-Leng; Rampal, Krishna Gopal; Chandrasakaran, Abherhame

2004-07-01

A cross-sectional survey of semiconductor factories was conducted to identify the ergonomic risk factors in the work processes, the prevalence of body pain among workers, and the relationship between body pain and work processes. A total of 906 women semiconductor workers took part in the study. In wafer preparation and polishing, a combination of lifting weights and prolonged standing might have led to high pain prevalences in the low back (35.0% wafer preparation, 41.7% wafer polishing) and lower limbs (90.0% wafer preparation, 66.7% wafer polishing). Semiconductor front of line workers, who mostly walked around to operate machines in clean rooms, had the lowest prevalences of body pain. Semiconductor assembly middle of line workers, especially the molding workers, who did frequent lifting, had high pain prevalences in the neck/shoulders (54.8%) and upper back (43.5 %). In the semiconductor assembly end of line work section, chip inspection workers who were exposed to prolonged sitting without back support had high prevalences of neck/shoulder (62.2%) and upper back pain (50.0%), while chip testing workers who had to climb steps to load units had a high prevalence of lower limb pain (68.0%). Workers in the assembly of electronic components, carrying out repetitive tasks with hands and fingers, and standing in awkward postures had high pain prevalences in the neck/shoulders (61.5%), arms (38.5%), and hands/wrists (30.8%).

75 FR 16887 - Self-Regulatory Organizations; NASDAQ OMX PHLX, Inc.; Order Granting Approval of Proposed Rule...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-02

... the Number of Components in the PHLX Semiconductor Sector SM Known as SOX SM , on Which Options are... expand the number of components in the PHLX Semiconductor Sector\\SM\\ known as SOX\\SM\\, on which options... 240.19b-4. \\3\\ PHLX Semiconductor Sector\\SM\\ may also be known as PHLX Semiconductor Index or PHLX...

Photo-voltaic power generating means and methods

DOEpatents

Kroger, Ferdinand A.; Rod, Robert L.; Panicker, M. P. Ramachandra

1983-08-23

A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials. The present invention also provides a method of using three electrodes in order to form the semiconductor compound material on one of these electrodes. Various examples are given for manufacturing different photo-voltaic cells in accordance with the present invention.

Photo-voltaic power generating means and methods

DOEpatents

Kroger, Ferdinand A.; Rod, Robert L.; Panicker, Ramachandra M. P.; Knaster, Mark B.

1984-01-10

A photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials. The present invention also provides a method of using three electrodes in order to form the semiconductor compound material on one of these electrodes. Various examples are given for manufacturing different photo-voltaic cells in accordance with the present invention.

The simulation of air recirculation and fire/explosion phenomena within a semiconductor factory.

PubMed

I, Yet-Pole; Chiu, Yi-Long; Wu, Shi-Jen

2009-04-30

The semiconductor industry is the collection of capital-intensive firms that employ a variety of hazardous chemicals and engage in the design and fabrication of semiconductor devices. Owing to its processing characteristics, the fully confined structure of the fabrication area (fab) and the vertical airflow ventilation design restrict the applications of traditional consequence analysis techniques that are commonly used in other industries. The adverse situation also limits the advancement of a fire/explosion prevention design for the industry. In this research, a realistic model of a semiconductor factory with a fab, sub-fabrication area, supply air plenum, and return air plenum structures was constructed and the computational fluid dynamics algorithm was employed to simulate the possible fire/explosion range and its severity. The semiconductor factory has fan module units with high efficiency particulate air filters that can keep the airflow uniform within the cleanroom. This condition was modeled by 25 fans, three layers of porous ceiling, and one layer of porous floor. The obtained results predicted very well the real airflow pattern in the semiconductor factory. Different released gases, leak locations, and leak rates were applied to investigate their influence on the hazard range and severity. Common mitigation measures such as a water spray system and a pressure relief panel were also provided to study their potential effectiveness to relieve thermal radiation and overpressure hazards within a fab. The semiconductor industry can use this simulation procedure as a reference on how to implement a consequence analysis for a flammable gas release accident within an air recirculation cleanroom.

Technician Training for the Semiconductor Microdevices Industry. Final Report.

ERIC Educational Resources Information Center

Center for Occupational Research and Development, Inc., Waco, TX.

The Center for Occupational Research and Development (CORD) carried out four activities to foster semiconductor manufacturing technician (SMT) training: (1) collaboration with industry experts and educators while developing a curriculum to train SMTs; (2) implementation and testing of the curriculum at a technical college; (3) dissemination of…

15 CFR 700.15 - Extension of priority ratings.

Code of Federal Regulations, 2010 CFR

2010-01-01

...) BUREAU OF INDUSTRY AND SECURITY, DEPARTMENT OF COMMERCE NATIONAL SECURITY INDUSTRIAL BASE REGULATIONS... receipt of a DO-A3 rated order for a navigation system and needs to purchase semiconductors for its manufacture, that person must use a DO-A3 rated order to obtain the needed semiconductors. (b) The priority...

The Structuring of Shared Voluntary Standards in the U.S. Semiconductor Industry: Communicating to Reach Agreement.

ERIC Educational Resources Information Center

Browning, Larry D.; Beyer, Janice M.

1998-01-01

Contributes to scholarship on organizational communication by tracing how voluntary cooperative standards were developed for the semiconductor industry through reflexive communication processes initiated by the SEMATECH consortium. Analyzes seven pivotal incidents that show how increased communication produced new provinces of meaning, actions,…

The United States digital recording industry

NASA Technical Reports Server (NTRS)

Simonds, John L.

1993-01-01

The recording industry resembles the semiconductor industry in several aspects. Both are large (greater than $60 Billion/year revenues); both are considered critical technologies supporting national objectives; both are experiencing increased competition from foreign suppliers; they recognize significant opportunities for both technological and market growth in the decade to come; and both realize that a key to this future growth lies in alliances among industry, academia, and government. The semiconductor industry has made significant investments in alliances relating to manufacturing technologies (SEMATECH) and to joint long-term technology research centered in universities (SRC). The federal government has provided funding support of these efforts in recognition of the critical roles semiconductor technologies play in national interests. The recording industry is now also forming critical alliances, but has been slower in starting and in gaining broad recognition by government agencies and legislators that the industry needs federal support. Traditionally, the recording industry has been viewed as mature, stable, and, while critical to national interests, able to chart and fund its own course toward future national needs. That perception is fortunately changing.

Microelectromechanical System (MEMS) Device Being Developed for Active Cooling and Temperature Control

NASA Technical Reports Server (NTRS)

Beach, Duane E.

2003-01-01

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) using a Stirling thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface is being developed at the NASA Glenn Research Center to meet this need. The device can be used strictly in the cooling mode or can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly employ techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces, limited failure modes, and minimal induced vibration. The MEMS cooler has potential applications across a broad range of industries such as the biomedical, computer, automotive, and aerospace industries. The basic capabilities it provides can be categorized into four key areas: 1) Extended environmental temperature range in harsh environments; 2) Lower operating temperatures for electronics and other components; 3) Precision spatial and temporal thermal control for temperature-sensitive devices; and 4) The enabling of microsystem devices that require active cooling and/or temperature control. The rapidly expanding capabilities of semiconductor processing in general, and microsystems packaging in particular, present a new opportunity to extend Stirling-cycle cooling to the MEMS domain. The comparatively high capacity and efficiency possible with a MEMS Stirling cooler provides a level of active cooling that is impossible at the microscale with current state-of-the-art techniques. The MEMS cooler technology builds on decades of research at Glenn on Stirling-cycle machines, and capitalizes on Glenn s emerging microsystems capabilities.

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

DOEpatents

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

2014-06-24

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

Electronics

DTIC Science & Technology

2001-01-01

International Acer Incorporated, Hsin Chu, Taiwan Aerospace Industrial Development Corporation, Taichung, Taiwan American Institute of Taiwan, Taipei, Taiwan...Singapore and Malaysia .5 - 4 - The largest market for semiconductor products is the high technology consumer electronics industry that consumes up...Singapore, and Malaysia . A new semiconductor facility costs around $3 billion to build and takes about two years to become operational

Compact microwave ion source for industrial applications.

PubMed

Cho, Yong-Sub; Kim, Dae-Il; Kim, Han-Sung; Seol, Kyung-Tae; Kwon, Hyeok-Jung; Hong, In-Seok

2012-02-01

A 2.45 GHz microwave ion source for ion implanters has many good properties for industrial application, such as easy maintenance and long lifetime, and it should be compact for budget and space. But, it has a dc current supply for the solenoid and a rf generator for plasma generation. Usually, they are located on high voltage platform because they are electrically connected with beam extraction power supply. Using permanent magnet solenoid and multi-layer dc break, high voltage deck and high voltage isolation transformer can be eliminated, and the dose rate on targets can be controlled by pulse duty control with semiconductor high voltage switch. Because the beam optics does not change, beam transfer components, such as focusing elements and beam shutter, can be eliminated. It has shown the good performances in budget and space for industrial applications of ion beams.

The Semiconductor Industry and Emerging Technologies: A Study Using a Modified Delphi Method

ERIC Educational Resources Information Center

Jordan, Edgar A.

2010-01-01

The purpose of this qualitative descriptive study was to determine what leaders in the semiconductor industry thought the future of computing would look like and what emerging materials showed the most promise to overcome the current theoretical limit of 10 nanometers for silicon dioxide. The researcher used a modified Delphi technique in two…

Cascade laser applications: trends and challenges

NASA Astrophysics Data System (ADS)

d'Humières, B.; Margoto, Éric; Fazilleau, Yves

2016-03-01

When analyses need rapid measurements, cost effective monitoring and miniaturization, tunable semiconductor lasers can be very good sources. Indeed, applications like on-field environmental gas analysis or in-line industrial process control are becoming available thanks to the advantage of tunable semiconductor lasers. Advances in cascade lasers (CL) are revolutionizing Mid-IR spectroscopy with two alternatives: interband cascade lasers (ICL) in the 3-6μm spectrum and quantum cascade lasers (QCL), with more power from 3 to 300μm. The market is getting mature with strong players for driving applications like industry, environment, life science or transports. CL are not the only Mid-IR laser source. In fact, a strong competition is now taking place with other technologies like: OPO, VCSEL, Solid State lasers, Gas, SC Infrared or fiber lasers. In other words, CL have to conquer a share of the Mid-IR application market. Our study is a market analysis of CL technologies and their applications. It shows that improvements of components performance, along with the progress of infrared laser spectroscopy will drive the CL market growth. We compare CL technologies with other Mid-IR sources and estimate their share in each application market.

Center for Semiconductor Materials and Device Modeling: expanding collaborative research opportunities between government, academia, and industry

NASA Astrophysics Data System (ADS)

Perconti, Philip; Bedair, Sarah S.; Bajaj, Jagmohan; Schuster, Jonathan; Reed, Meredith

2016-09-01

To increase Soldier readiness and enhance situational understanding in ever-changing and complex environments, there is a need for rapid development and deployment of Army technologies utilizing sensors, photonics, and electronics. Fundamental aspects of these technologies include the research and development of semiconductor materials and devices which are ubiquitous in numerous applications. Since many Army technologies are considered niche, there is a lack of significant industry investment in the fundamental research and understanding of semiconductor technologies relevant to the Army. To address this issue, the US Army Research Laboratory is establishing a Center for Semiconductor Materials and Device Modeling and seeks to leverage expertise and resources across academia, government and industry. Several key research areas—highlighted and addressed in this paper—have been identified by ARL and external partners and will be pursued in a collaborative fashion by this Center. This paper will also address the mechanisms by which the Center is being established and will operate.

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji-Won

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes duringmore » consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.« less

High-performance green semiconductor devices: materials, designs, and fabrication

NASA Astrophysics Data System (ADS)

Jung, Yei Hwan; Zhang, Huilong; Gong, Shaoqin; Ma, Zhenqiang

2017-06-01

From large industrial computers to non-portable home appliances and finally to light-weight portable gadgets, the rapid evolution of electronics has facilitated our daily pursuits and increased our life comforts. However, these rapid advances have led to a significant decrease in the lifetime of consumer electronics. The serious environmental threat that comes from electronic waste not only involves materials like plastics and heavy metals, but also includes toxic materials like mercury, cadmium, arsenic, and lead, which can leak into the ground and contaminate the water we drink, the food we eat, and the animals that live around us. Furthermore, most electronics are comprised of non-renewable, non-biodegradable, and potentially toxic materials. Difficulties in recycling the increasing amount of electronic waste could eventually lead to permanent environmental pollution. As such, discarded electronics that can naturally degrade over time would reduce recycling challenges and minimize their threat to the environment. This review provides a snapshot of the current developments and challenges of green electronics at the semiconductor device level. It looks at the developments that have been made in an effort to help reduce the accumulation of electronic waste by utilizing unconventional, biodegradable materials as components. While many semiconductors are classified as non-biodegradable, a few biodegradable semiconducting materials exist and are used as electrical components. This review begins with a discussion of biodegradable materials for electronics, followed by designs and processes for the manufacturing of green electronics using different techniques and designs. In the later sections of the review, various examples of biodegradable electrical components, such as sensors, circuits, and batteries, that together can form a functional electronic device, are discussed and new applications using green electronics are reviewed.

Technology Roadmaps for Compound Semiconductors

PubMed Central

Bennett, Herbert S.

2000-01-01

The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within the context of trends in the Si CMOS industry. In particular, the extent to which these technology roadmaps treat compound semiconductors at the materials processing and device levels will be presented for specific applications. For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. Some general actions for progress towards the proposed International Technology Roadmap for Compound Semiconductors (ITRCS) and methods for determining the value of an ITRCS will be suggested. But, in the final analysis, the value added by an ITRCS will depend on how industry leaders respond. The technical challenges and economic opportunities of delivering high quality digital video to consumers provide concrete examples of where the above actions and methods could be applied. PMID:27551615

neutron-Induced Failures in semiconductor Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wender, Stephen Arthur

2017-03-13

Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

76 FR 14688 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-03-17

... Integrated Circuit Semiconductor Chips and Products Containing the Same; Notice of a Commission Determination... certain large scale integrated circuit semiconductor chips and products containing same by reason of... existence of a domestic industry. The Commission's notice of investigation named several respondents...

77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-01

... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-840] Certain Semiconductor Integrated Circuit... States after importation of certain semiconductor integrated circuit devices and products containing same... No. 6,847,904 (``the '904 patent''). The complaint further alleges that an industry in the United...

Optoelectronics components and technology for optical networking in China: recent progress and future trends

NASA Astrophysics Data System (ADS)

Jiang, Shan; Liu, Shuihua

2004-04-01

Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.

Digital terrain modeling and industrial surface metrology: Converging realms

USGS Publications Warehouse

Pike, R.J.

2001-01-01

Digital terrain modeling has a micro-and nanoscale counterpart in surface metrology, the numerical characterization of industrial surfaces. Instrumentation in semiconductor manufacturing and other high-technology fields can now contour surface irregularities down to the atomic scale. Surface metrology has been revolutionized by its ability to manipulate square-grid height matrices that are analogous to the digital elevation models (DEMs) used in physical geography. Because the shaping of industrial surfaces is a spatial process, the same concepts of analytical cartography that represent ground-surface form in geography evolved independently in metrology: The surface topography of manufactured components, exemplified here by automobile-engine cylinders, is routinely modeled by variogram analysis, relief shading, and most other techniques of parameterization and visualization familiar to geography. This article introduces industrial surface-metrology, examines the field in the context of terrain modeling and geomorphology and notes their similarities and differences, and raises theoretical issues to be addressed in progressing toward a unified practice of surface morphometry.

Dye-Sensitized Approaches to Photovoltaics

NASA Astrophysics Data System (ADS)

Grätzel, Michael

2008-03-01

Sensitization of wide band-gap semiconductors to photons of energy less than the band-gap is a key step in two technically important processes - panchromatic photography and photoelectrochemical solar cells. In both cases the photosensitive species is not the semiconductor - silver halide or metal oxide - but rather an electrochemically active dye. The gap between the highest occupied molecular level (HOMO) and the lowest unoccupied molecular level (LUMO) is less than the band-gap of the semiconductor with which it is associated. It can therefore absorb light of a wavelength longer than that to which the semiconductor itself is sensitive. The electrochemical process is initiated when the dye molecule relaxes from its photoexcited level by electron injection into the semiconductor, which therefore acts as a photoanode. If the dye is in contact with a redox electrolyte, the negative charge represented by the lost electron can be recovered from the reduced state of the redox system, which in return is regenerated by charge transfer from a cathode. An external load completes the electrical circuit. The system therefore represents a conversion of the energy of absorbed photons into an electrical current by a regenerative device in every functional respect analogous to a solid-state photovoltaic cell. As in any engineering system, choice of materials, their optimization and their synergy are essential to efficient operation. While a semiconductor-electrolyte contact is analogous to a Schottky contact, in that a barrier is established between two materials of different conduction mechanism, with the possibility of optical absorption, charge carrier pair generation and separation, it should be remembered that the photogenerated valence band hole in the semiconductor represents a powerful oxidizing agent. Given that the band-gap is related to the strength and therefore the stability of chemical bonding within the semiconductor, for narrow-gap materials the most likely reaction of such a hole is the photocorrosion of the semiconductor itself. However, only relatively narrow band-gap materials have an effective optical absorption through the visible spectrum, towards and into the infra-red. Materials with an optimal band-gap match to the solar spectrum, of the order of 1.5eV, are therefore electrochemically unstable. A stable photoelectrochemical cell, without some process of optical sensitization, and necessarily using a wide-gap semiconductor is sensitive only to the ultra-violet limit of the visible spectrum. Over recent years a suitable combination of semiconductor and sensitizer has been identified and optimized, so that now a solar spectrum conversion efficiency of over 11% has been verified in a sensitized photoelectrochemical device. One key to such an efficient system is the suppression of recombination losses. When the excited dye relaxes by electron loss, the separated charge carriers find themselves on opposite sides of a phase barrier -- the electron within the solid-state semiconductor, the positive charge externally, in association with the dye molecule. There is no valence---band involvement in the process, so the system represents a majority-carrier device, avoiding one of the major loss mechanisms in conventional photovoltaics. In consequence also a highly-disordered, even porous, semiconductor structure is acceptable, enabling surface adsorption of a sufficient concentration of the dye to permit total optical absorption of incident light of photon energy greater than the HOMO-LUMO gap of the dye molecule. The accepted wide-band semiconductor for photoelectrochemical applications is titanium dioxide in the anatase crystal structure. The size of the nanocrystals making up the semiconductor photoanode can be determined by hydrothermal processing of a precursor sol, and the film can be deposited on a transparent conducting oxide (TCO) substrate by any convenient thin-film process such as screen printing or tape casting. The preferred dye system is inspired by the natural processes involving chlorophyll, the coloring material in plants on which all earthly life depends. Chlorophyll is an organometallic dye, with a metal ion, Mg, within a porphyrin cage of nitrogen atoms. The synthetic chemist of course can select any convenient metal within the periodic table, and experience shows that ruthenium has the optimal properties expected. A ruthenium-pyridyl complex provides the chromophore of the dye, with the HOMO-LUMO gap, and thence the absorption spectrum bring modified by substitution with thiocyanide groups. Chemisorptive attachment of the dye to the metal oxide surface is obtained by carboxyl groups attached to the pyridyl components. The energetics of the dye is such that the LUMO level is just above the conduction band edge of the semiconductor, enabling relaxation by electron injection as required. A satisfactory electroactive dye structure, with good attachment properties and a wide optical absorption spectrum is therefore a sophisticated molecular engineering product. The electrolyte is also an optimized electrochemical system. The basic redox behavior is provided by the iodine/iodide system, with the advantage that the ions, both oxidized and reduced are relatively small, and therefore mobile in the supporting electrolyte. Energy losses due to slow diffusion are minimized. Early experiments used aqueous electrolytes, though with limited cell lifetime due to hydrolysis of the chemisorptive dye---semiconductor bond. A wide range of organic systems were therefore investigated, with the present favored formulation being based on imidazole salts. These have the additional advantage of low vapor pressure, very necessary as the photoactive sites under mid---day sun illumination may reach 80 C or higher. Low losses at the cathode counterelectrode are also a requirement for cell efficiency. The cathode is not necessarily transparent, and prototype cells on thin metal foils have been produced. However a TCO on glass or polymer counterelectrode is widely used. In either case suitable electrocatalytic behavior is required and frequently a nanodispersed Pt precipitated from haxachloride solution is employed. It is by now evident that the achievement of an industrially-competitive sensitized photoelectrochemical solar cell is the result of the optimization of several components, associated obviously with their effective synergy. Each change of a single component has repercussions on the choice and performance of others. However as already mentioned an efficiency of over 11% has now been certified, and a stability of over 14,000 hours under accelerated testing with continuous simulated AM1.5 illumination was recently reported. In consequence there is increasing confidence on the part of industry. Several licensees of EPFL patents on dye---sensitized photovoltaic systems are now preparing for large-scale production. G24 Innovations PLC in Wales is commissioning a manufacturing plant, and Dyesol PLC in Australia is making available the required materials on an industrial scale. In conclusion, then, it can be stated that the DSC system is much more than a fascinating scientific artifact illustrating charge-transfer mechanisms at electrochemical interfaces; an efficiency and reliability with industrial credibility have been demonstrated and verified, and a significant role in competition with other photosystems can be foreseen.

75 FR 76023 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-07

... Certain Semiconductor Chips and Products Containing Same, DN 2771; the Commission is soliciting comments... semiconductor chips and products containing same The complaint names as respondents Freescale Semiconductor, Inc... Microtech (U.S.A.) Corp. of City of Industry, CA; Biostar Microtech International Corp. of Hsin Tien, Taiwan...

75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-05-05

... Integrated Circuit Semiconductor Chips and Products Containing Same; Notice of Investigation AGENCY: U.S... of certain large scale integrated circuit semiconductor chips and products containing same by reason... alleges that an industry in the United States exists as required by subsection (a)(2) of section 337. The...

75 FR 5804 - In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-04

... Semiconductor Integrated Circuits and Products Containing Same; Notice of Commission Determination To Review in... importation of certain semiconductor integrated circuits and products containing same by reason of... that there exists a domestic industry with respect to each of the asserted patents. The complaint named...

Cancer mortality among US workers employed in semiconductor wafer fabrication.

PubMed

Boice, John D; Marano, Donald E; Munro, Heather M; Chadda, Bandana K; Signorello, Lisa B; Tarone, Robert E; Blot, William J; McLaughlin, Joseph K

2010-11-01

To evaluate potential cancer risks in the US semiconductor wafer fabrication industry. A cohort of 100,081 semiconductor workers employed between 1968 and 2002 was studied. Standardized mortality ratios and relative risks (RRs) were estimated. Standardized mortality ratios were similar and significantly low among fabrication and nonfabrication workers for all causes (0.54 and 0.54) and all cancers (0.74 and 0.72). Internal comparisons also showed similar overall cancer risks among fabrication workers (RR = 0.98), including process equipment operators and process equipment service technicians (OP/EST) employed in cleanrooms (RR = 0.97), compared with nonfabrication workers. Nonsignificantly elevated RRs were observed for a few cancer sites among OP/EST workers, but the numbers of deaths were small and there were no trends of increasing risk with duration of employment. Work in the US semiconductor industry, including semiconductor wafer fabrication in cleanrooms, was not associated with increased cancer mortality overall or mortality from any specific form of cancer. However, due to the young average age of this cohort and its associated relatively low numbers of deaths, regular mortality updates of this semiconductor worker cohort are warranted.

Solid state potentiometric gaseous oxide sensor

NASA Technical Reports Server (NTRS)

Wachsman, Eric D. (Inventor); Azad, Abdul Majeed (Inventor)

2003-01-01

A solid state electrochemical cell (10a) for measuring the concentration of a component of a gas mixture (12) includes first semiconductor electrode (14) and second semiconductor electrode (16) formed from first and second semiconductor materials, respectively. The materials are selected so as to undergo a change in resistivity upon contacting a gas component, such as CO or NO. An electrolyte (18) is provided in contact with the first and second semiconductor electrodes. A reference cell can be included in contact with the electrolyte. Preferably, a voltage response of the first semiconductor electrode is opposite in slope direction to that of the second semiconductor electrode to produce a voltage response equal to the sum of the absolute values of the control system uses measured pollutant concentrations to direct adjustment of engine combustion conditions.

European semiconductor industry: Markets, government programs

NASA Astrophysics Data System (ADS)

Scharf, A.

1983-01-01

The marketing of the semiconductor industry in Europe and especially microelectronics which is situated between the millstones of USA and Japan is discussed. The concerned enterprises and governments appear to lack the motivation for close cooperation using European resources, corresponding to the ideas of the contracts on which the common market is based. It is felt that microelectronics is promoted in individual countries under more national perspectives, and the enterprises are pursuing strictly their own interests in cooperating with predominantly American and Japanese partners. An insight into the European semiconductor scene, its markets, as well as assistance for promotion and establishment available in the individual countries is discussed.

The FinFET Breakthrough and Networks of Innovation in the Semiconductor Industry, 1980-2005: Applying Digital Tools to the History of Technology.

PubMed

O'Reagan, Douglas; Fleming, Lee

2018-01-01

The "FinFET" design for transistors, developed at the University of California, Berkeley, in the 1990s, represented a major leap forward in the semiconductor industry. Understanding its origins and importance requires deep knowledge of local factors, such as the relationships among the lab's principal investigators, students, staff, and the institution. It also requires understanding this lab within the broader network of relationships that comprise the semiconductor industry-a much more difficult task using traditional historical methods, due to the paucity of sources on industrial research. This article is simultaneously 1) a history of an impactful technology and its social context, 2) an experiment in using data tools and visualizations as a complement to archival and oral history sources, to clarify and explore these "big picture" dimensions, and 3) an introduction to specific data visualization tools that we hope will be useful to historians of technology more generally.

Environmental and workplace contamination in the semiconductor industry: implications for future health of the workforce and community.

PubMed Central

Edelman, P

1990-01-01

The semiconductor industry has been an enormous worldwide growth industry. At the heart of computer and other electronic technological advances, the environment in and around these manufacturing facilities has not been scrutinized to fully detail the health effects to the workers and the community from such exposures. Hazard identification in this industry leads to the conclusion that there are many sources of potential exposure to chemicals including arsenic, solvents, photoactive polymers and other materials. As the size of the semiconductor work force expands, the potential for adverse health effects, ranging from transient irritant symptoms to reproductive effects and cancer, must be determined and control measures instituted. Risk assessments need to be effected for areas where these facilities conduct manufacturing. The predominance of women in the manufacturing areas requires evaluating the exposures to reproductive hazards and outcomes. Arsenic exposures must also be evaluated and minimized, especially for maintenance workers; evaluation for lung and skin cancers is also appropriate. PMID:2401268

National Manufacturing Strategy: Is a National Manufacturing Strategy Essential to National Security?

DTIC Science & Technology

2011-05-01

cycle found nearly a quarter of all homeowners owning more than their home was worth. 11 Both Paul Volcker and Warren Buffet arrived at similar...November 15, 2010; Warren Buffet , Testimony, Financial Crisis Inquiry Commission, June 2, 2010; “Subprime Mortgage Crisis,” http://en.wikipedia.org...overseas manufacturing. Case Study: Semiconductor Wafer Industry. The history of the semiconductor industry is an instructive account . It begins with

Synthesis of a Nano-Silver Metal Ink for Use in Thick Conductive Film Fabrication Applied on a Semiconductor Package

PubMed Central

Yung, Lai Chin; Fei, Cheong Choke; Mandeep, JS; Binti Abdullah, Huda; Wee, Lai Khin

2014-01-01

The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail. PMID:24830317

Synthesis of a nano-silver metal ink for use in thick conductive film fabrication applied on a semiconductor package.

PubMed

Yung, Lai Chin; Fei, Cheong Choke; Mandeep, Js; Binti Abdullah, Huda; Wee, Lai Khin

2014-01-01

The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail.

75 FR 51843 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-23

... Integrated Circuit Semiconductor Chips and Products Containing the Same; Notice of Commission Decision Not To... semiconductor chips and products containing same by reason of infringement of certain claims of U.S. Patent Nos. 5,933,364 and 6,834,336. The complaint further alleges the existence of a domestic industry. The...

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

DOEpatents

Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

2014-05-20

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

DOEpatents

Rogers, John A [Champaign, IL; Meitl, Matthew [Raleigh, NC; Sun, Yugang [Naperville, IL; Ko, Heung Cho [Urbana, IL; Carlson, Andrew [Urbana, IL; Choi, Won Mook [Champaign, IL; Stoykovich, Mark [Dover, NH; Jiang, Hanqing [Urbana, IL; Huang, Yonggang [Glencoe, IL; Nuzzo, Ralph G [Champaign, IL; Lee, Keon Jae [Tokyo, JP; Zhu, Zhengtao [Rapid City, SD; Menard, Etienne [Durham, NC; Khang, Dahl-Young [Seoul, KR; Kan, Seong Jun [Daejeon, KR; Ahn, Jong Hyun [Suwon, KR; Kim, Hoon-sik [Champaign, IL

2012-07-10

In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries

PubMed Central

Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

2016-01-01

Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments. PMID:27681994

Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries.

PubMed

Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

2016-09-29

Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments.

Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries

NASA Astrophysics Data System (ADS)

Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

2016-09-01

Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments.

REDUCTION OF ARSENIC WASTES IN THE SEMICONDUCTOR INDUSTRY

EPA Science Inventory

The research described in this report was aimed at initiating and developing processes and process modifications that could be incorporated into semiconductor manufacturing operations to accomplish pollution prevention, especially to accomplish significant reduction in the quanti...

The relationship between spontaneous abortion and female workers in the semiconductor industry.

PubMed

Kim, Heechan; Kwon, Ho-Jang; Rhie, Jeongbae; Lim, Sinye; Kang, Yun-Dan; Eom, Sang-Yong; Lim, Hyungryul; Myong, Jun-Pyo; Roh, Sangchul

2017-01-01

This study investigated the relationship between job type and the risk for spontaneous abortion to assess the reproductive toxicity of female workers in the semiconductor industry. A questionnaire survey was administered to current female workers of two semiconductor manufacturing plants in Korea. We included female workers who became pregnant at least 6 months after the start of their employment with the company. The pregnancy outcomes of 2,242 female workers who experienced 4,037 pregnancies were investigated. Personnel records were used to assign the subjects to one of three groups: fabrication process workers, packaging process workers, and clerical workers. To adjust for within-person correlations between pregnancies, a generalized estimating equation was used. The logistic regression analysis was limited to the first pregnancy after joining the company to satisfy the assumption of independence among pregnancies. Moreover, we stratified the analysis by time period (pregnancy in the years prior to 2008 vs. after 2009) to reflect differences in occupational exposure based on semiconductor production periods. The risk for spontaneous abortion in female semiconductor workers was not significantly higher for fabrication and packaging process workers than for clerical workers. However, when we stratified by time period, the odds ratio for spontaneous abortion was significantly higher for packaging process workers who became pregnant prior to 2008 when compared with clerical workers (odds ratio: 2.21; 95% confidence interval: 1.01-4.81). When examining the pregnancies of female semiconductor workers that occurred prior to 2008, packaging process workers showed a significantly higher risk for spontaneous abortions than did clerical workers. The two semiconductor production periods in our study (prior to 2008 vs. after 2009) had different automated processes, chemical exposure levels, and working environments. Thus, the conditions prior to 2008 may have increased the risk for spontaneous abortions in packaging process workers in the semiconductor industry.

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

NASA Astrophysics Data System (ADS)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

1984-01-01

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

Adsorption of Heavy Metals in Industrial Wastewater by Magnetic Nano-particles

NASA Astrophysics Data System (ADS)

Tu, Y.; You, C.

2010-12-01

Industrial wastewater containing heavy metals is of great concern because of their toxic impact to living species and environments. Removal of metal ions from industrial effluent using nano-particles is an area of extensive research. This study collected wastewaters and effluents from 11 industrial companies in tanning, electronic plating, printed circuit board manufacturing, semi-conductor, and metal surface treatment industry and studied in detailed the major and trace element compositions to develop potential fingerprinting technique for pollutant source identification. The results showed that electronic plating and metal surface treatment industry produce high Fe, Mn, Cr, Zn, Ni and Mo wastewater. The tanning industry and the printed circuit board manufacturing industry released wastewater with high Fe and Cr, Cu and Ni, respectively. For semi-conductor industry, significant dissolved In was detected in wastewater. The absorption experiments to remove heavy metals in waters were conducted using Fe3O4 nano-particles. Under optimal conditions, more than 99 % dissolved metals were removed in a few minutes.

Design and Fabrication of Millimeter Wave Hexagonal Nano-Ferrite Circulator on Silicon CMOS Substrate

NASA Astrophysics Data System (ADS)

Oukacha, Hassan

The rapid advancement of Complementary Metal Oxide Semiconductor (CMOS) technology has formed the backbone of the modern computing revolution enabling the development of computationally intensive electronic devices that are smaller, faster, less expensive, and consume less power. This well-established technology has transformed the mobile computing and communications industries by providing high levels of system integration on a single substrate, high reliability and low manufacturing cost. The driving force behind this computing revolution is the scaling of semiconductor devices to smaller geometries which has resulted in faster switching speeds and the promise of replacing traditional, bulky radio frequency (RF) components with miniaturized devices. Such devices play an important role in our society enabling ubiquitous computing and on-demand data access. This thesis presents the design and development of a magnetic circulator component in a standard 180 nm CMOS process. The design approach involves integration of nanoscale ferrite materials on a CMOS chip to avoid using bulky magnetic materials employed in conventional circulators. This device constitutes the next generation broadband millimeter-wave circulator integrated in CMOS using ferrite materials operating in the 60GHz frequency band. The unlicensed ultra-high frequency spectrum around 60GHz offers many benefits: very high immunity to interference, high security, and frequency re-use. Results of both simulations and measurements are presented in this thesis. The presented results show the benefits of this technique and the potential that it has in incorporating a complete system-on-chip (SoC) that includes low noise amplifier, power amplier, and antenna. This system-on-chip can be used in the same applications where the conventional circulator has been employed, including communication systems, radar systems, navigation and air traffic control, and military equipment. This set of applications of circulator shows how crucial this device is to many industries and the need for smaller, cost effective RF components.

Infrared spectroscopic near-field mapping of single nanotransistors.

PubMed

Huber, A J; Wittborn, J; Hillenbrand, R

2010-06-11

We demonstrate the application of scattering-type scanning near-field optical microscopy (s-SNOM) for infrared (IR) spectroscopic material recognition in state-of-the-art semiconductor devices. In particular, we employ s-SNOM for imaging of industrial CMOS transistors with a resolution better than 20 nm, which allows for the first time IR spectroscopic recognition of amorphous SiO(2) and Si(3)N(4) components in a single transistor device. The experimentally recorded near-field spectral signature of amorphous SiO(2) shows excellent agreement with model calculations based on literature dielectric values, verifying that the characteristic near-field contrasts of SiO(2) stem from a phonon-polariton resonant near-field interaction between the probing tip and the SiO(2) nanostructures. Local material recognition by s-SNOM in combination with its capabilities of contact-free and non-invasive conductivity- and strain-mapping makes IR near-field microscopy a versatile metrology technique for nanoscale material characterization and semiconductor device analysis with application potential in research and development, failure analysis and reverse engineering.

Power SEMICONDUCTORS—STATE of Art and Future Trends

NASA Astrophysics Data System (ADS)

Benda, Vitezslav

2011-06-01

The importance of effective energy conversion control, including power generation from renewable and environmentally clean energy sources, increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications, both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance.

Protons, Aerospace, and Electronics: A National Interest

NASA Technical Reports Server (NTRS)

Label, Kenneth A.; Turflinger, Thomas L.

2017-01-01

The aerospace and semiconductor industries lost 2000 hours annually of research access when IUCF closed. An ad hoc team between the U.S. government and industry was formed to evaluate other facility options. In this presentation, we will discuss: 1) Why aerospace, semiconductor manufacturers, and others are interested in proton facility access, as well as, 2) Some of the basics of a typical test for electronics, and 3) We'll conclude with the brief current status on progress.

Protons, Aerospace, and Electronics: A National Interest

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Turflinger, Thomas L.

2018-01-01

The aerospace and semiconductor industries lost approximately 2000 hours annually of research access when IUCF closed. An ad hoc team between the U.S. government and industry was formed to evaluate other facility options. In this presentation, we will discuss: 1) Why aerospace, semiconductor manufacturers, and others are interested in proton facility access, as well as, 2) Some of the basics of a typical tests for electronics, and 3) We'll conclude with the brief current status on progress.

Protons, Aerospace, and Electronics: A National Interest

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Turflinger, Thomas L.

2018-01-01

The aerospace and semiconductor industries lost approx. 2000 hours annually of research access when IUCF closed. An ad hoc team between the U.S. government and industry was formed to evaluate other facility options. In this presentation, we will discuss: 1) Why aerospace, semiconductor manufacturers, and others are interested in proton facility access, as well as, 2) Some of the basics of a typical test for electronics, and 3) We"ll conclude with the brief current status on progress.

77 FR 24178 - Information Systems Technical Advisory Committee; Notice of Partially Closed Meeting

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-23

... and Introductions 2. Working Group Reports 3. Industry Presentation: E-beam Lithography 4. Industry Presentation: ENC Threshold for Satellite Modem 5. Industry Presentation: Semiconductor Manufacturing Equipment... DEPARTMENT OF COMMERCE Bureau of Industry and Security Information Systems Technical Advisory...

Semiconductor chips, genes, and stem cells: new wine for new bottles?

PubMed

Rose, Simone A

2012-01-01

This Article analogizes early semiconductor technology and its surrounding economics with isolated genes, stem cells, and related bioproducts, and their surrounding economics, to make the case for sui generis (of its own class) intellectual property protection for isolated bioproducts. Just as early semiconductors failed to meet the patent social bargain requiring novelty and non-obviousness in the 1980s, isolated genes and stem cells currently fail to meet the patent bargain requirements of non-obviousness and eligible subject matter that entitle them to traditional intellectual property protection. Like early semiconductor chip designs, nevertheless, the high cost of upstream bioproduct research and development, coupled with the need to sustain continued economic growth of the biotechnology industry, mandates that Congress provide some level of exclusive rights to ensure continued funding for this research. Sui generis intellectual property protection for isolated bioproducts would preserve the incentive to continue innovation in the field. As illustrated by the semiconductor industry, however, such sui generis protection for this technology must include limitations that address the need to provide an appropriate level of public access to facilitate downstream product development and enrich the public domain.

Semiconductor assisted metal deposition for nanolithography applications

DOEpatents

Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

2001-01-01

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Semiconductor assisted metal deposition for nanolithography applications

DOEpatents

Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

2002-01-01

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

NASA Astrophysics Data System (ADS)

Sahatiya, Parikshit; Badhulika, Sushmee

2016-07-01

Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

PubMed

Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

2014-12-23

An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

NASA Technical Reports Server (NTRS)

Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

1998-01-01

The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

Thermally robust semiconductor optical amplifiers and laser diodes

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

2002-01-01

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

The Computer Industry. High Technology Industries: Profiles and Outlooks.

ERIC Educational Resources Information Center

International Trade Administration (DOC), Washington, DC.

A series of meetings was held to assess future problems in United States high technology, particularly in the fields of robotics, computers, semiconductors, and telecommunications. This report, which focuses on the computer industry, includes a profile of this industry and the papers presented by industry speakers during the meetings. The profile…

Product manufacturing, quality, and reliability initiatives to maintain a competitive advantage and meet customer expectations in the semiconductor industry

NASA Astrophysics Data System (ADS)

Capps, Gregory

Semiconductor products are manufactured and consumed across the world. The semiconductor industry is constantly striving to manufacture products with greater performance, improved efficiency, less energy consumption, smaller feature sizes, thinner gate oxides, and faster speeds. Customers have pushed towards zero defects and require a more reliable, higher quality product than ever before. Manufacturers are required to improve yields, reduce operating costs, and increase revenue to maintain a competitive advantage. Opportunities exist for integrated circuit (IC) customers and manufacturers to work together and independently to reduce costs, eliminate waste, reduce defects, reduce warranty returns, and improve quality. This project focuses on electrical over-stress (EOS) and re-test okay (RTOK), two top failure return mechanisms, which both make great defect reduction opportunities in customer-manufacturer relationship. Proactive continuous improvement initiatives and methodologies are addressed with emphasis on product life cycle, manufacturing processes, test, statistical process control (SPC), industry best practices, customer education, and customer-manufacturer interaction.

Spontaneous abortion in the British semiconductor industry: An HSE investigation. Health and Safety Executive.

PubMed

Elliott, R C; Jones, J R; McElvenny, D M; Pennington, M J; Northage, C; Clegg, T A; Clarke, S D; Hodgson, J T; Osman, J

1999-11-01

The UK Health and Safety Executive (HSE) conducted a study to examine the risk of spontaneous abortion (SAB) in British female semiconductor industry workers, following reports from the USA which suggested an association between risk of SAB and work in fabrication rooms and/or exposure to ethylene glycol ethers. A nested case-control study based on 2,207 women who had worked at eight manufacturing sites during a 5-year retrospective time frame was established; 36 cases were matched with 80 controls. The overall SAB rate in the industry was 10.0%. (65 SABs/651 pregnancies) The crude odds ratio (OR) for fabrication work was 0.65 (95% CI 0.30-1.40). This was essentially unchanged after adjustment for a range of potential confounding factors in the first 3 months of pregnancy and was reduced to 0.58 (95% CI 0.26-1.30) after adjustment for smoking in the previous 12 months. There were no statistically significantly elevated ORs for any work group or any specific chemical or physical exposure in the industry. There is no evidence of an increased risk of SAB in the British semiconductor industry. Am. J. Ind. Med. 36:557-572, 1999. Published 1999 Wiley-Liss, Inc.

40 CFR 469.10 - Applicability.

Code of Federal Regulations, 2010 CFR

2010-07-01

... ELECTRICAL AND ELECTRONIC COMPONENTS POINT SOURCE CATEGORY Semiconductor Subcategory § 469.10 Applicability... associated with the manufacture of semiconductors, except sputtering, vapor deposition, and electroplating. ...

40 CFR 469.10 - Applicability.

Code of Federal Regulations, 2011 CFR

2011-07-01

... ELECTRICAL AND ELECTRONIC COMPONENTS POINT SOURCE CATEGORY Semiconductor Subcategory § 469.10 Applicability... associated with the manufacture of semiconductors, except sputtering, vapor deposition, and electroplating. ...

Rhenium ion beam for implantation into semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.

2012-02-15

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics andmore » nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.« less

Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, K.; Camp, J.

2011-01-01

So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell.

PubMed

Toumazou, Christofer; Thay, Tan Sri Lim Kok; Georgiou, Pantelis

2014-03-28

Semiconductor genetics is now disrupting the field of healthcare owing to the rapid parallelization and scaling of DNA sensing using ion-sensitive field-effect transistors (ISFETs) fabricated using commercial complementary metal -oxide semiconductor technology. The enabling concept of DNA reaction monitoring introduced by Toumazou has made this a reality and we are now seeing relentless scaling with Moore's law ultimately achieving the $100 genome. In this paper, we present the next evolution of this technology through the creation of the gene-sensitive integrated cell (GSIC) for label-free real-time analysis based on ISFETs. This device is derived from the traditional metal-oxide semiconductor field-effect transistor (MOSFET) and has electrical performance identical to that of a MOSFET in a standard semiconductor process, yet is capable of incorporating DNA reaction chemistries for applications in single nucleotide polymorphism microarrays and DNA sequencing. Just as application-specific integrated circuits, which are developed in much the same way, have shaped our consumer electronics industry and modern communications and memory technology, so, too, do GSICs based on a single underlying technology principle have the capacity to transform the life science and healthcare industries.

Foundational Forces & Hidden Variables in Technology Commercialization

NASA Astrophysics Data System (ADS)

Barnett, Brandon

2011-03-01

The science of physics seems vastly different from the process of technology commercialization. Physics strives to understand our world through the experimental deduction of immutable laws and dependent variables and the resulting macro-scale phenomenon. In comparison, the~goal of business is to make a profit by addressing the needs, preferences, and whims of individuals in a market. It may seem that this environment is too dynamic to identify all the hidden variables and deduct the foundational forces that impact a business's ability to commercialize innovative technologies. One example of a business ``force'' is found in the semiconductor industry. In 1965, Intel co-founder Gordon Moore predicted that the number of transistors incorporated in a chip will approximately double every 24 months. Known as Moore's Law, this prediction has become the guiding principle for the semiconductor industry for the last 40 years. Of course, Moore's Law is not really a law of nature; rather it is the result of efforts by Intel and the entire semiconductor industry. A closer examination suggests that there are foundational principles of business that underlie the macro-scale phenomenon of Moore's Law. Principles of profitability, incentive, and strategic alignment have resulted in a coordinated influx of resources that has driven technologies to market, increasing the profitability of the semiconductor industry and optimizing the fitness of its participants. New innovations in technology are subject to these same principles. So, in addition to traditional market forces, these often unrecognized forces and variables create challenges for new technology commercialization. In this talk, I will draw from ethnographic research, complex adaptive theory, and industry data to suggest a framework with which to think about new technology commercialization. Intel's bio-silicon initiative provides a case study.

SIMULTANEOUS WATER CONSERVATION/RECYCLING/REUSE AND WASTE REDUCTION IN SEMICONDUCTOR MANUFACTURING

EPA Science Inventory

The project was devoted to two separate arms of research.  The overall goals of this research was to reduce the water use in the semi-conductor industry through a comprehensive program to reduce water usage in manufacturing processes, to investigate opportunitie...

Integrating Asynchronous Digital Design Into the Computer Engineering Curriculum

ERIC Educational Resources Information Center

Smith, S. C.; Al-Assadi, W. K.; Di, J.

2010-01-01

As demand increases for circuits with higher performance, higher complexity, and decreased feature size, asynchronous (clockless) paradigms will become more widely used in the semiconductor industry, as evidenced by the International Technology Roadmap for Semiconductors' (ITRS) prediction of a likely shift from synchronous to asynchronous design…

Plasma Properties of an Exploding Semiconductor Igniter

NASA Astrophysics Data System (ADS)

McGuirk, J. S.; Thomas, K. A.; Shaffer, E.; Malone, A. L.; Baginski, T.; Baginski, M. E.

1997-11-01

Requirements by the automotive industry for low-cost, pyrotechnic igniters for automotive airbags have led to the development of several semiconductor devices. The properties of the plasma produced by the vaporization of an exploding semiconductor are necessary in order to minimize the electrical energy requirements. This work considers two silicon-based semiconductor devices: the semiconductor bridge (SCB) and the semiconductor junction igniter both consisting of etched silicon with vapor deposited aluminum structures. Electrical current passing through the device heats a narrow junction region to the point of vaporization creating an aluminum and silicon low-temperature plasma. This work will investigate the electrical characteristics of both devices and infer the plasma properties. Furthermore optical spectral measurements will be taken of the exploding devices to estimate the temperature and density of the plasma.

75 FR 62462 - Additions to the List of Validated End-Users in the People's Republic of China: Hynix...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-10-12

...In this final rule, the Bureau of Industry and Security amends the Export Administration Regulations (EAR) to add three end-users, Hynix Semiconductor (China) Ltd., Hynix Semiconductor (Wuxi) Ltd. and Lam Research Corporation to the list of validated end-users in the People's Republic of China (PRC). With this rule, exports, reexports and transfers (in-country) of certain items to one facility of Hynix Semiconductor (China) Ltd., one facility of Hynix Semiconductor (Wuxi) Ltd. and nine facilities of Lam Research Corporation in the PRC are now authorized under Authorization Validated End-User (VEU).

Introduction to Semiconductor Devices

NASA Astrophysics Data System (ADS)

Brennan, Kevin F.

2005-03-01

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

Apparatus and method for fabricating a microbattery

DOEpatents

Shul, Randy J.; Kravitz, Stanley H.; Christenson, Todd R.; Zipperian, Thomas E.; Ingersoll, David

2002-01-01

An apparatus and method for fabricating a microbattery that uses silicon as the structural component, packaging component, and semiconductor to reduce the weight, size, and cost of thin film battery technology is described. When combined with advanced semiconductor packaging techniques, such a silicon-based microbattery enables the fabrication of autonomous, highly functional, integrated microsystems having broad applicability.

Rare earth-doped materials with enhanced thermoelectric figure of merit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Venkatasubramanian, Rama; Cook, Bruce Allen; Levin, Evgenii M.

A thermoelectric material and a thermoelectric converter using this material. The thermoelectric material has a first component including a semiconductor material and a second component including a rare earth material included in the first component to thereby increase a figure of merit of a composite of the semiconductor material and the rare earth material relative to a figure of merit of the semiconductor material. The thermoelectric converter has a p-type thermoelectric material and a n-type thermoelectric material. At least one of the p-type thermoelectric material and the n-type thermoelectric material includes a rare earth material in at least one ofmore » the p-type thermoelectric material or the n-type thermoelectric material.« less

Roadmap evolution: from NTRS to ITRS, from ITRS 2.0 to IRDS

NASA Astrophysics Data System (ADS)

Gargini, Paolo A.

2017-10-01

The semiconductor industry benefitted from roadmap guidance since the mid-60s. The roadmap anticipated and outlined the main needs of the semiconductor industry for years to come and identified future challenges and possible solutions. Making transistor smaller by means of advanced lithographic technologies enabled both increased integration levels and improved IC performance. The roadmap methodology allowed the removal of multiple "red brick walls". The NTRS and the ITRS constituted primarily a "bottom up" approach as standard microprocessors and memories where introduced at a blistering pace barely allowing time for system houses to integrate them in their products. The 1998 ITRS provided the vision that triggered research, development and manufacturing communities to develop a completely new transistor structure in addition to replacing aluminum interconnects with a more advanced technology. The advent of Foundries and Fabless companies transformed the electronics industry into a "top down" driven industry in the past 15 years. The ITRS adjusted to this new ecosystem and morphed into the International Roadmap for Devices and Systems (IRDS) sponsored by IEEE. The IRDS is addressing the requirements and needs of the renewed electronics industry. Furthermore, by the middle of the next decade the ability to layout integrated circuits in a 2D geometry grid will reach fundamental physical limits and the aggressive conversion to 3D architecture for integrated circuit must be pursued across the board as an avenue to continuously increasing transistor count and improving performance. EUV technology is finally approaching the manufacturing stage but with the advent of 3D monolithically integrated heterogeneous circuits approaching in the not-toodistant future should the semiconductor industry concentrate its resources on the next lithographic technology generation in order to enhance resolution or on providing a smooth transition to the new revolutionary 3D architecture of integrated circuits? It is essential for the whole semiconductor industry to come together and make fundamental choices leading to a cooperative and synchronized allocation of adequate resources to produce viable solutions that once introduced in a timely manner into manufacturing will enable the continuation of the growth of the electronic industry at a pace comparable or exceeding historical trends.

Methods and devices for fabricating and assembling printable semiconductor elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Roadmap on semiconductor-cell biointerfaces

NASA Astrophysics Data System (ADS)

Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

2018-05-01

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

Methods and devices for fabricating and assembling printable semiconductor elements

DOEpatents

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Semiconductor Research Corporation: A Case Study in Cooperative Innovation Partnerships

ERIC Educational Resources Information Center

Logar, Nathaniel; Anadon, Laura Diaz; Narayanamurti, Venkatesh

2014-01-01

In the study of innovation institutions, it is important to consider how different institutional models can affect a research organization in conducting or funding successful work. As an industry collaborative, Semiconductor Research Corporation (SRC) provides an example of a privately funded institution that leverages the inputs of several member…

78 FR 28628 - Notice of Determinations Regarding Eligibility To Apply for Worker Adjustment Assistance

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-15

... identified by name by the International Trade Commission as a member of a domestic industry in an... date 82,509 Hemlock Semiconductor Corporation, Hemlock, MI......... February 27, 2012. Dow Corning Corporation, Adecco, Qualified Staffing, SimplexGrennell LP. 82,509A Hemlock Semiconductor LLC, Dow...

77 FR 65878 - Application for Final Commitment for a Long-term Loan or Financial Guarantee in Excess of $100...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-10-31

... export of semiconductor manufacturing equipment to Germany. Brief non-proprietary description of the anticipated use of the items being exported: Equipment supports the manufacture of logic semiconductors. To... United States industry. Parties: Principal Suppliers: Applied Materials, Inc., KLA-Tencor Corporation...

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred J; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2014-05-13

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John [Champaign, IL; Nuzzo, Ralph [Champaign, IL; Meitl, Matthew [Durham, NC; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL; Motala, Michael [Champaign, IL; Ahn, Jong-Hyun [Suwon, KR; Park, Sang-II [Savoy, IL; Yu,; Chang-Jae, [Urbana, IL; Ko, Heung-Cho [Gwangju, KR; Stoykovich,; Mark, [Dover, NH; Yoon, Jongseung [Urbana, IL

2011-07-05

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong -Hyun; Park, Sang -Il; Yu, Chang -Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2015-08-25

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2017-03-21

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Workplace Safety and Health Topics: Industries and Occupations

MedlinePlus

... Workplace Exposure Control Nanotechnology Occupational Health Psychology Office Environment and Worker Safety and Health Outdoor Workers Poultry Industry Workers Productive Aging and Work Safe, Green, and Sustainable Construction Semiconductor Manufacturing Small Business ...

Atmospheric Nitrogen Trifluoride: Optimized emission estimates using 2-D and 3-D Chemical Transport Models from 1973-2008

NASA Astrophysics Data System (ADS)

Ivy, D. J.; Rigby, M. L.; Prinn, R. G.; Muhle, J.; Weiss, R. F.

2009-12-01

We present optimized annual global emissions from 1973-2008 of nitrogen trifluoride (NF3), a powerful greenhouse gas which is not currently regulated by the Kyoto Protocol. In the past few decades, NF3 production has dramatically increased due to its usage in the semiconductor industry. Emissions were estimated through the 'pulse-method' discrete Kalman filter using both a simple, flexible 2-D 12-box model used in the Advanced Global Atmospheric Gases Experiment (AGAGE) network and the Model for Ozone and Related Tracers (MOZART v4.5), a full 3-D atmospheric chemistry model. No official audited reports of industrial NF3 emissions are available, and with limited information on production, a priori emissions were estimated using both a bottom-up and top-down approach with two different spatial patterns based on semiconductor perfluorocarbon (PFC) emissions from the Emission Database for Global Atmospheric Research (EDGAR v3.2) and Semiconductor Industry Association sales information. Both spatial patterns used in the models gave consistent results, showing the robustness of the estimated global emissions. Differences between estimates using the 2-D and 3-D models can be attributed to transport rates and resolution differences. Additionally, new NF3 industry production and market information is presented. Emission estimates from both the 2-D and 3-D models suggest that either the assumed industry release rate of NF3 or industry production information is still underestimated.

Theoretical analysis of a method for extracting the phase of a phase-amplitude modulated signal generated by a direct-modulated optical injection-locked semiconductor laser

NASA Astrophysics Data System (ADS)

Lee, Hwan; Cho, Jun-Hyung; Sung, Hyuk-Kee

2017-05-01

The phase modulation (PM) and amplitude modulation (AM) of optical signals can be achieved using a direct-modulated (DM) optical injection-locked (OIL) semiconductor laser. We propose and theoretically analyze a simple method to extract the phase component of a PM signal produced by a DM-OIL semiconductor laser. The pure AM component of the combined PM-AM signal can be isolated by square-law detection in a photodetector and can then be used to compensate for the PM-AM signal based on an optical homodyne method. Using the AM compensation technique, we successfully developed a simple and cost-effective phase extraction method applicable to the PM-AM optical signal of a DM-OIL semiconductor laser.

Industry Studies of Wage Inequality. Extra Issue.

ERIC Educational Resources Information Center

Industrial and Labor Relations Review, 2001

2001-01-01

The seven papers use data from particular industries to examine the nature and causes of recent changes in earnings equality in the United States. They provide perspectives from banking, telecommunications, semiconductors, steel, grocery, truck driving, apparel, and imaging industries on recent debates regarding the influence that technological…

Mineral commodity profiles: Germanium

USGS Publications Warehouse

Butterman, W.C.; Jorgenson, John D.

2005-01-01

Overview -- Germanium is a hard, brittle semimetal that first came into use a half-century ago as a semiconductor material in radar units and as the material from which the first transistor was made. Today it is used principally as a component of the glass in telecommunications fiber optics; as a polymerization catalyst for polyethylene terephthalate (PET), a commercially important plastic; in infrared (IR) night vision devices; and as a semiconductor and substrate in electronics circuitry. Most germanium is recovered as a byproduct of zinc smelting, although it also has been recovered at some copper smelters and from the fly ash of coal-burning industrial powerplants. It is a highly dispersed element, associated primarily with base-metal sulfide ores. In the United States, germanium is recovered from zinc smelter residues and manufacturing scrap and is refined by two companies at four germanium refineries. One of the four refineries is dedicated to processing scrap. In 2000, producers sold zone-refined (high-purity) germanium at about $1,250 per kilogram and electronic-grade germanium dioxide (GeO2) at $800 per kilogram. Domestic refined production was valued at $22 million. Germanium is a critical component in highly technical devices and processes. It is likely to remain in demand in the future at levels at least as high as those of 2000. U.S. resources of germanium are probably adequate to meet domestic needs for several decades.

Quantum cascade lasers grown on silicon.

PubMed

Nguyen-Van, Hoang; Baranov, Alexei N; Loghmari, Zeineb; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournet, Julie; Narcy, Gregoire; Boissier, Guilhem; Patriarche, Gilles; Bahriz, Michael; Tournié, Eric; Teissier, Roland

2018-05-08

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Anaerobic biodegradability and methanogenic toxicity of key constituents in copper chemical mechanical planarization effluents of the semiconductor industry.

PubMed

Hollingsworth, Jeremy; Sierra-Alvarez, Reyes; Zhou, Michael; Ogden, Kimberly L; Field, Jim A

2005-06-01

Copper chemical mechanical planarization (CMP) effluents can account for 30-40% of the water discharge in semiconductor manufacturing. CMP effluents contain high concentrations of soluble copper and a complex mixture of organic constituents. The aim of this study is to perform a preliminary assessment of the treatability of CMP effluents in anaerobic sulfidogenic bioreactors inoculated with anaerobic granular sludge by testing individual compounds expected in the CMP effluents. Of all the compounds tested (copper (II), benzotriazoles, polyethylene glycol (M(n) 300), polyethylene glycol (M(n) 860) monooleate, perfluoro-1-octane sulfonate, citric acid, oxalic acid and isopropanol) only copper was found to be inhibitory to methanogenic activity at the concentrations tested. Most of the organic compounds tested were biodegradable with the exception of perfluoro-1-octane sulfonate and benzotriazoles under sulfate reducing conditions and with the exception of the same compounds as well as Triton X-100 under methanogenic conditions. The susceptibility of key components in CMP effluents to anaerobic biodegradation combined with their low microbial inhibition suggest that CMP effluents should be amenable to biological treatment in sulfate reducing bioreactors.

Development of standardized specifications for screening space level integrated circuits and semiconductors

NASA Technical Reports Server (NTRS)

1984-01-01

Standardized methods are established for screening of JAN B microcircuits and JANTXV semiconductor components for space mission or other critical applications when JAN S devices are not available. General specifications are provided which outline the DPA (destructive physical analysis), environmental, electrical, and data requirements for screening of various component technologies. This standard was developed for Air Force Space Division, and is available for use by other DOD agencies, NASA, and space systems contractors for establishing common screening methods for electronic components.

Reporting of occupational injury and illness in the semiconductor manufacturing industry.

PubMed

McCurdy, S A; Schenker, M B; Samuels, S J

1991-01-01

In the United States, occupational illness and injury cases meeting specific reporting criteria are recorded on company Occupational Safety and Health Administration (OSHA) 200 logs; case description data are submitted to participating state agencies for coding and entry in the national Supplementary Data System (SDS). We evaluated completeness of reporting (the percentage of reportable cases that were recorded in the company OSHA 200 log) in the semiconductor manufacturing industry by reviewing company health clinic records for 1984 of 10 manufacturing sites of member companies of a national semiconductor manufacturing industry trade association. Of 416 randomly selected work-related cases, 101 met OSHA reporting criteria. Reporting completeness was 60 percent and was lowest for occupational illnesses (44 percent). Case-description data from 150 reported cases were submitted twice to state coding personnel to evaluate coding reliability. Reliability was high (kappa 0.82-0.93) for "nature," "affected body part," "source," and "type" variables. Coding for the SDS appears reliable; reporting completeness may be improved by use of a stepwise approach by company personnel responsible for reporting decisions.

Contamination-Free Manufacturing: Tool Component Qualification, Verification and Correlation with Wafers

NASA Astrophysics Data System (ADS)

Tan, Samantha H.; Chen, Ning; Liu, Shi; Wang, Kefei

2003-09-01

As part of the semiconductor industry "contamination-free manufacturing" effort, significant emphasis has been placed on reducing potential sources of contamination from process equipment and process equipment components. Process tools contain process chambers and components that are exposed to the process environment or process chemistry and in some cases are in direct contact with production wafers. Any contamination from these sources must be controlled or eliminated in order to maintain high process yields, device performance, and device reliability. This paper discusses new nondestructive analytical methods for quantitative measurement of the cleanliness of metal, quartz, polysilicon and ceramic components that are used in process equipment tools. The goal of these new procedures is to measure the effectiveness of cleaning procedures and to verify whether a tool component part is sufficiently clean for installation and subsequent routine use in the manufacturing line. These procedures provide a reliable "qualification method" for tool component certification and also provide a routine quality control method for reliable operation of cleaning facilities. Cost advantages to wafer manufacturing include higher yields due to improved process cleanliness and elimination of yield loss and downtime resulting from the installation of "bad" components in process tools. We also discuss a representative example of wafer contamination having been linked to a specific process tool component.

19 CFR 12.39 - Imported articles involving unfair methods of competition or practices.

Code of Federal Regulations, 2010 CFR

2010-04-01

... economically operated United States industry, or to restrain or monopolize trade and commerce in the United... the authorization or consent of the Government. (e) Importations of semiconductor chip products. (1) In accordance with the Semiconductor Chip Protection Act of 1984 (17 U.S.C. 901 et seq.), if the...

Integration and manufacture of multifunctional planar lightwave circuits

NASA Astrophysics Data System (ADS)

Lipscomb, George F.; Ticknor, Anthony J.; Stiller, Marc A.; Chen, Wenjie; Schroeter, Paul

2001-11-01

The demands of exponentially growing Internet traffic, coupled with the advent of Dense Wavelength Division Multiplexing (DWDM) fiber optic systems to meet those demands, have triggered a revolution in the telecommunications industry. This dramatic change has been built upon, and has driven, improvements in fiber optic component technology. The next generation of systems for the all optical network will require higher performance components coupled with dramatically lower costs. One approach to achieve significantly lower costs per function is to employ Planar Lightwave Circuits (PLC) to integrate multiple optical functions in a single package. PLCs are optical circuits laid out on a silicon wafer, and are made using tools and techniques developed to extremely high levels by the semi-conductor industry. In this way multiple components can be fabricated and interconnected at once, significantly reducing both the manufacturing and the packaging/assembly costs. Currently, the predominant commercial application of PLC technology is arrayed-waveguide gratings (AWG's) for multiplexing and demultiplexing multiple wavelength channels in a DWDM system. Although this is generally perceived as a single-function device, it can be performing the function of more than 100 discrete fiber-optic components and already represents a considerable degree of integration. Furthermore, programmable functions such as variable-optical attenuators (VOAs) and switches made with compatible PLC technology are now moving into commercial production. In this paper, we present results on the integration of active and passive functions together using PLC technology, e.g. a 40 channel AWG multiplexer with 40 individually controllable VOAs.

Electrical and Optical Measurements of the Bandgap Energy of a Light-Emitting Diode

ERIC Educational Resources Information Center

Petit, Matthieu; Michez, Lisa; Raimundo, Jean-Manuel; Dumas, Philippe

2016-01-01

Semiconductor materials are at the core of electronics. Most electronic devices are made of semiconductors. The operation of these components is well described by quantum physics which is often a difficult concept for students to understand. One of the intrinsic parameters of semiconductors is their bandgap energy E[subscript g]. In the case of…

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

2014-11-25

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Release strategies for making transferable semiconductor structures, devices and device components

DOEpatents

Rogers, John A [Champaign, IL; Nuzzo, Ralph G [Champaign, IL; Meitl, Matthew [Raleigh, NC; Ko, Heung Cho [Urbana, IL; Yoon, Jongseung [Urbana, IL; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL

2011-04-26

Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Release strategies for making transferable semiconductor structures, devices and device components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew

2016-05-24

Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

Thermo-optically tunable thin film devices

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.

2003-10-01

We report advances in tunable thin film technology and demonstration of multi-cavity tunable filters. Thin film interference coatings are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable components based on the properties of semiconductor thin films with large thermo-optic coefficients. The technology is based on amorphous silicon deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable thin films can be constructed in sophisticated multi-cavity, multi-layer optical designs.

75 FR 73131 - Innovion Corporation, Gresham, OR; Notice of Negative Determination on Reconsideration

Federal Register 2010, 2011, 2012, 2013, 2014

2010-11-29

... in the semiconductor industry. The initial investigation resulted in a negative determination based... a member of a domestic industry injured under a provision of the Tariff Act of 1930 [Section 222(f...

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors.

PubMed

Fluegel, Brian; Mialitsin, Aleksej V; Beaton, Daniel A; Reno, John L; Mascarenhas, Angelo

2015-05-28

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10(-4). Comparing our strain sensitivity and signal strength in Al(x)Ga(1-x)As with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10(3), thus obviating key constraints in semiconductor strain metrology.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

PubMed Central

Fluegel, Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; Reno, John L.; Mascarenhas, Angelo

2015-01-01

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10−4. Comparing our strain sensitivity and signal strength in AlxGa1−xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 103, thus obviating key constraints in semiconductor strain metrology. PMID:26017853

2012 Mask Industry Survey

NASA Astrophysics Data System (ADS)

Malloy, Matt; Litt, Lloyd C.

2012-11-01

A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

Apparatus and methods for memory using in-plane polarization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Junwei; Chang, Kai; Ji, Shuai-Hua

A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process ismore » non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.« less

Hydrogen fluoride (HF) substance flow analysis for safe and sustainable chemical industry.

PubMed

Kim, Junbeum; Hwang, Yongwoo; Yoo, Mijin; Chen, Sha; Lee, Ik-Mo

2017-11-01

In this study, the chemical substance flow of hydrogen fluoride (hydrofluoric acid, HF) in domestic chemical industries in 2014 was analyzed in order to provide a basic material and information for the establishment of organized management system to ensure safety during HF applications. A total of 44,751 tons of HF was made by four domestic companies (in 2014); import amount was 95,984 tons in 2014 while 21,579 tons of HF was imported in 2005. The export amount of HF was 2180 tons, of which 2074 ton (China, 1422 tons, U.S. 524 tons, and Malaysia, 128 tons) was exported for the manufacturing of semiconductors. Based on the export and import amounts, it can be inferred that HF was used for manufacturing semiconductors. The industries applications of 161,123 tons of HF were as follows: manufacturing of basic inorganic chemical substance (27,937 tons), manufacturing of other chemical products such as detergents (28,208 tons), manufacturing of flat display (24,896 tons), and manufacturing of glass container package (22,002 tons). In this study, an analysis of the chemical substance flow showed that HF was mainly used in the semiconductor industry as well as glass container manufacturing. Combined with other risk management tools and approaches in the chemical industry, the chemical substance flow analysis (CSFA) can be a useful tool and method for assessment and management. The current CSFA results provide useful information for policy making in the chemical industry and national systems. Graphical abstract Hydrogen fluoride chemical substance flows in 2014 in South Korea.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

78 FR 42777 - Application for Final Commitment for a Long-Term Loan or Financial Guarantee in Excess of $100...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-07-17

... the transaction: To support the export of U.S. manufactured semiconductor manufacturing equipment to... supports the manufacture of NAND flash semiconductors. To the extent that Ex-Im Bank is reasonably aware... exportation of goods or provision of services by a United States industry. Parties: Principal Supplier...

Employment Lessons from the Electronics Industry.

ERIC Educational Resources Information Center

Alic, John A.; Harris, Martha Caldwell

1986-01-01

Semiskilled and "unskilled" workers in semiconductors, computer manufacturing, and consumer electronics industries are more likely than other workers to lose jobs because of technology, imports, and offshore production. However, advances in technology do tend to create jobs for skilled workers. (CT)

Power components for the Space Station 20-kHz power distribution system

NASA Technical Reports Server (NTRS)

Renz, David D.

1988-01-01

Since 1984, NASA Lewis Research Center was developing high power, high frequency space power components as part of The Space Station Advanced Development program. The purpose of the Advanced Development program was to accelerate existing component programs to ensure their availability for use on the Space Station. These components include a rotary power transfer device, remote power controllers, remote bus isolators, high power semiconductor, a high power semiconductor package, high frequency-high power cable, high frequency-high power connectors, and high frequency-high power transformers. All the components were developed to the prototype level and will be installed in the Lewis Research Center Space Station power system test bed.

Power components for the space station 20-kHz power distribution system

NASA Technical Reports Server (NTRS)

Renz, David D.

1988-01-01

Since 1984, NASA Lewis Research Center was developing high power, high frequency space power components as part of The Space Station Advanced Development program. The purpose of The Advanced Development program was to accelerate existing component programs to ensure their availability for use on the Space Station. These components include a rotary power transfer device, remote power controllers, remote bus isolators, high power semiconductor, a high power semiconductor package, high frequency-high power cable, high frequency-high power connectors, and high frequency-high power transformers. All the components were developed to the prototype level and will be installed in the Lewis Research Center Space Station power system test bed.

Semiconductor radiation detector

DOEpatents

Bell, Zane W.; Burger, Arnold

2010-03-30

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Development of biosensors based on the one-dimensional semiconductor nanomaterials.

PubMed

Yan, Shancheng; Shi, Yi; Xiao, Zhongdang; Zhou, Minmin; Yan, Wenfu; Shen, Haoliang; Hu, Dong

2012-09-01

Biosensors are becoming increasingly important due to their applications in biological and chemical analyses, food safety industry, biomedical diagnostics, clinical detection, and environmental monitoring. Recent years, nanostructured semiconductor materials have been used to fabricate biosensors owing to their biocompatibility, low toxicity, high electron mobility, and easy fabrication. In the present study, we focus on recent various biosensors based on the one-dimensional semiconductor nanomaterials such as electrochemical biosensor, field-effect transistors biosensor, and label-free optical biosensor. In particular, the development of the electrochemical biosensor is discussed detailedly.

Reliability analysis of component-level redundant topologies for solid-state fault current limiter

NASA Astrophysics Data System (ADS)

Farhadi, Masoud; Abapour, Mehdi; Mohammadi-Ivatloo, Behnam

2018-04-01

Experience shows that semiconductor switches in power electronics systems are the most vulnerable components. One of the most common ways to solve this reliability challenge is component-level redundant design. There are four possible configurations for the redundant design in component level. This article presents a comparative reliability analysis between different component-level redundant designs for solid-state fault current limiter. The aim of the proposed analysis is to determine the more reliable component-level redundant configuration. The mean time to failure (MTTF) is used as the reliability parameter. Considering both fault types (open circuit and short circuit), the MTTFs of different configurations are calculated. It is demonstrated that more reliable configuration depends on the junction temperature of the semiconductor switches in the steady state. That junction temperature is a function of (i) ambient temperature, (ii) power loss of the semiconductor switch and (iii) thermal resistance of heat sink. Also, results' sensitivity to each parameter is investigated. The results show that in different conditions, various configurations have higher reliability. The experimental results are presented to clarify the theory and feasibility of the proposed approaches. At last, levelised costs of different configurations are analysed for a fair comparison.

Ultrafast magnetization modulation induced by the electric field component of a terahertz pulse in a ferromagnetic-semiconductor thin film.

PubMed

Ishii, Tomoaki; Yamakawa, Hiromichi; Kanaki, Toshiki; Miyamoto, Tatsuya; Kida, Noriaki; Okamoto, Hiroshi; Tanaka, Masaaki; Ohya, Shinobu

2018-05-02

High-speed magnetization control of ferromagnetic films using light pulses is attracting considerable attention and is increasingly important for the development of spintronic devices. Irradiation with a nearly monocyclic terahertz pulse, which can induce strong electromagnetic fields in ferromagnetic films within an extremely short time of less than ~1 ps, is promising for damping-free high-speed coherent control of the magnetization. Here, we successfully observe a terahertz response in a ferromagnetic-semiconductor thin film. In addition, we find that a similar terahertz response is observed even in a non-magnetic semiconductor and reveal that the electric-field component of the terahertz pulse plays a crucial role in the magnetization response through the spin-carrier interactions in a ferromagnetic-semiconductor thin film. Our findings will provide new guidelines for designing materials suitable for ultrafast magnetization reversal.

Semiconductor Ion Implanters

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacKinnon, Barry A.; Ruffell, John P.

In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intelmore » product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.« less

Subnanosecond Scintillation Detector

NASA Technical Reports Server (NTRS)

Hoenk, Michael (Inventor); Hennessy, John (Inventor); Hitlin, David (Inventor)

2017-01-01

A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.

Increased risk of death with congenital anomalies in the offspring of male semiconductor workers.

PubMed

Lin, Ching-Chun; Wang, Jung-Der; Hsieh, Gong-Yih; Chang, Yu-Yin; Chen, Pau-Chung

2008-01-01

Female workers in the semiconductor industry have higher risks of subfertility and spontaneous abortion, but no studies exploring male-mediated developmental toxicity have been published. This study aimed to investigate whether the offspring of male workers employed in the semiconductor manufacturing industry had an increased risk of death with congenital anomalies. The 6,834 male workers had been employed in the eight semiconductor companies in Taiwan between 1980 and 1994. We identified the live born children with or without congenital anomalies of the workers using the National Birth and Death Registries from the Department of Health, Taiwan. Multiple logistic regression models were used to estimate the odds ratios (OR) of birth outcomes and deaths, controlling for infant sex, maternal age, and paternal education. A total of 5,702 children were born to male workers during the period 1980-1994. There were increased risks of deaths with congenital anomalies (adjusted OR, 3.26; and 95% confidence interval [CI], 1.12-9.44) and heart anomalies (OR, 4.15; 95% CI, 1.08-15.95) in the offspring of male workers who were employed during the two months before conception. We found evidence of a possible link between paternal preconception exposure of semiconductor manufacturing and an increased risk of congenital anomalies, especially of the heart. The possible etiological basis needs to be corroborated in further research.

Department of Defense statement on the X-ray Lithography Program to the Research and Development Subcommittee of the House Armed Services Committee of 100th Congress, second session

NASA Astrophysics Data System (ADS)

Maynard, E. D., Jr.

1988-03-01

The Department has a broad and necessarily diverse program in semiconductor science and technology. The three principal goals of that effort are: Reduce the gap between commercial integrated circuit usage and its deployment in military systems, assure a healthy on-shore industrial base to support our defense needs, enhance the producibility of specialized military semiconductor products. The major effort to achieve the first of these objectives is the Very High Speed Integrated Circuits (VHSIC) Program which is nearing completion. The Microwave/millimeter wave Monolithic Integrated Circuit (MIMIC) program has just completed a study program to define the product mix needed to meet military system requirements for radar, electronic warfare, smart weapons and telecommunications. We are bringing together the system requirements of all DoD with the device fabrication and product delivery capabilities of industry in an Infrared Focal Plane Array (IRFPA) program. The goal of the Software Initiative is to enhance our warfighting capability through development of efficient software generation technology and products plus the creation of a technology infusion infrastructure to couple the technology and products to system applications. The X-Ray Lithography Program will begin to establish the industrial base which will be required to sustain U.S. leadership in the semiconductor industry for the late 1990s.

Prolonged menstrual cycles in female workers exposed to ethylene glycol ethers in the semiconductor manufacturing industry.

PubMed

Hsieh, G-Y; Wang, J-D; Cheng, T-J; Chen, P-C

2005-08-01

It has been shown that female workers exposed to ethylene glycol ethers (EGEs) in the semiconductor industry have higher risks of spontaneous abortion, subfertility, and menstrual disturbances, and prolonged waiting time to pregnancy. To examine whether EGEs or other chemicals are associated with long menstrual cycles in female workers in the semiconductor manufacturing industry. Cross-sectional questionnaire survey during the annual health examination at a wafer manufacturing company in Taiwan in 1997. A three tiered exposure-assessment strategy was used to analyse the risk. A short menstrual cycle was defined to be a cycle less than 24 days and a long cycle to be more than 35 days. There were 606 valid questionnaires from 473 workers in fabrication jobs and 133 in non-fabrication areas. Long menstrual cycles were associated with workers in fabrication areas compared to those in non-fabrication areas. Using workers in non-fabrication areas as referents, workers in photolithography and diffusion areas had higher risks for long menstrual cycles. Workers exposed to EGEs and isopropanol, and hydrofluoric acid, isopropanol, and phosphorous compounds also showed increased risks of a long menstrual cycle. Exposure to multiple chemicals, including EGEs in photolithography, might be associated with long menstrual cycles, and may play an important role in a prolonged time to pregnancy in the wafer manufacturing industry; however, the prevalence in the design, possible exposure misclassification, and chance should be considered.

40 CFR 469.17 - New source performance standards (NSPS).

Code of Federal Regulations, 2010 CFR

2010-07-01

... GUIDELINES AND STANDARDS ELECTRICAL AND ELECTRONIC COMPONENTS POINT SOURCE CATEGORY Semiconductor Subcategory... the following new source performance standards (NSPS). Subpart A—Semiconductor NSPS Effluent... organics. 2 Not applicable. 3 Within the range of 6.0 to 9.0. ...

40 CFR 469.17 - New source performance standards (NSPS).

Code of Federal Regulations, 2011 CFR

2011-07-01

... GUIDELINES AND STANDARDS ELECTRICAL AND ELECTRONIC COMPONENTS POINT SOURCE CATEGORY Semiconductor Subcategory... the following new source performance standards (NSPS). Subpart A—Semiconductor NSPS Effluent... organics. 2 Not applicable. 3 Within the range of 6.0 to 9.0. ...

General Observation of Photocatalytic Oxygen Reduction to Hydrogen Peroxide by Organic Semiconductor Thin Films and Colloidal Crystals.

PubMed

Gryszel, Maciej; Sytnyk, Mykhailo; Jakešová, Marie; Romanazzi, Giuseppe; Gabrielsson, Roger; Heiss, Wolfgang; Głowacki, Eric Daniel

2018-04-25

Low-cost semiconductor photocatalysts offer unique possibilities for industrial chemical transformations and energy conversion applications. We report that a range of organic semiconductors are capable of efficient photocatalytic oxygen reduction to H 2 O 2 in aqueous conditions. These semiconductors, in the form of thin films, support a 2-electron/2-proton redox cycle involving photoreduction of dissolved O 2 to H 2 O 2 , with the concurrent photooxidation of organic substrates: formate, oxalate, and phenol. Photochemical oxygen reduction is observed in a pH range from 2 to 12. In cases where valence band energy of the semiconductor is energetically high, autoxidation competes with oxidation of the donors, and thus turnover numbers are low. Materials with deeper valence band energies afford higher stability and also oxidation of H 2 O to O 2 . We found increased H 2 O 2 evolution rate for surfactant-stabilized nanoparticles versus planar thin films. These results evidence that photochemical O 2 reduction may be a widespread feature of organic semiconductors, and open potential avenues for organic semiconductors for catalytic applications.

How architecture wins technology wars.

PubMed

Morris, C R; Ferguson, C H

1993-01-01

Signs of revolutionary transformation in the global computer industry are everywhere. A roll call of the major industry players reads like a waiting list in the emergency room. The usual explanations for the industry's turmoil are at best inadequate. Scale, friendly government policies, manufacturing capabilities, a strong position in desktop markets, excellent software, top design skills--none of these is sufficient, either by itself or in combination, to ensure competitive success in information technology. A new paradigm is required to explain patterns of success and failure. Simply stated, success flows to the company that manages to establish proprietary architectural control over a broad, fast-moving, competitive space. Architectural strategies have become crucial to information technology because of the astonishing rate of improvement in microprocessors and other semiconductor components. Since no single vendor can keep pace with the outpouring of cheap, powerful, mass-produced components, customers insist on stitching together their own local systems solutions. Architectures impose order on the system and make the interconnections possible. The architectural controller is the company that controls the standard by which the entire information package is assembled. Microsoft's Windows is an excellent example of this. Because of the popularity of Windows, companies like Lotus must conform their software to its parameters in order to compete for market share. In the 1990s, proprietary architectural control is not only possible but indispensable to competitive success. What's more, it has broader implications for organizational structure: architectural competition is giving rise to a new form of business organization.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

DOE PAGES

Fluegel., Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; ...

2015-05-28

In this study, the semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10 –4. Comparing our strain sensitivity andmore » signal strength in Al xGa 1–xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10 3, thus obviating key constraints in semiconductor strain metrology.« less

Virtual commissioning of automated micro-optical assembly

NASA Astrophysics Data System (ADS)

Schlette, Christian; Losch, Daniel; Haag, Sebastian; Zontar, Daniel; Roßmann, Jürgen; Brecher, Christian

2015-02-01

In this contribution, we present a novel approach to enable virtual commissioning for process developers in micro-optical assembly. Our approach aims at supporting micro-optics experts to effectively develop assisted or fully automated assembly solutions without detailed prior experience in programming while at the same time enabling them to easily implement their own libraries of expert schemes and algorithms for handling optical components. Virtual commissioning is enabled by a 3D simulation and visualization system in which the functionalities and properties of automated systems are modeled, simulated and controlled based on multi-agent systems. For process development, our approach supports event-, state- and time-based visual programming techniques for the agents and allows for their kinematic motion simulation in combination with looped-in simulation results for the optical components. First results have been achieved for simply switching the agents to command the real hardware setup after successful process implementation and validation in the virtual environment. We evaluated and adapted our system to meet the requirements set by industrial partners-- laser manufacturers as well as hardware suppliers of assembly platforms. The concept is applied to the automated assembly of optical components for optically pumped semiconductor lasers and positioning of optical components for beam-shaping

Degradation of electro-optic components aboard LDEF

NASA Technical Reports Server (NTRS)

Blue, M. D.

1993-01-01

Remeasurement of the properties of a set of electro-optic components exposed to the low-earth environment aboard the Long Duration Exposure Facility (LDEF) indicates that most components survived quite well. Typical components showed some effects related to the space environment unless well protected. The effects were often small but significant. Results for semiconductor infrared detectors, lasers, and LED's, as well as filters, mirrors, and black paints are described. Semiconductor detectors and emitters were scarred but reproduced their original characteristics. Spectral characteristics of multi-layer dielectric filters and mirrors were found to be altered and degraded. Increased absorption in black paints indicates an increase in absorption sites, giving rise to enhanced performance as coatings for baffles and sunscreens.

Conjugated polymers/semiconductor nanocrystals hybrid materials--preparation, electrical transport properties and applications.

PubMed

Reiss, Peter; Couderc, Elsa; De Girolamo, Julia; Pron, Adam

2011-02-01

This critical review discusses specific preparation and characterization methods applied to hybrid materials consisting of π-conjugated polymers (or oligomers) and semiconductor nanocrystals. These materials are of great importance in the quickly growing field of hybrid organic/inorganic electronics since they can serve as active components of photovoltaic cells, light emitting diodes, photodetectors and other devices. The electronic energy levels of the organic and inorganic components of the hybrid can be tuned individually and thin hybrid films can be processed using low cost solution based techniques. However, the interface between the hybrid components and the morphology of the hybrid directly influences the generation, separation and transport of charge carriers and those parameters are not easy to control. Therefore a large variety of different approaches for assembling the building blocks--conjugated polymers and semiconductor nanocrystals--has been developed. They range from their simple blending through various grafting procedures to methods exploiting specific non-covalent interactions between both components, induced by their tailor-made functionalization. In the first part of this review, we discuss the preparation of the building blocks (nanocrystals and polymers) and the strategies for their assembly into hybrid materials' thin films. In the second part, we focus on the charge carriers' generation and their transport within the hybrids. Finally, we summarize the performances of solar cells using conjugated polymer/semiconductor nanocrystals hybrids and give perspectives for future developments.

Industrial Physics Careers: A Large Company Perspective

NASA Astrophysics Data System (ADS)

Zollner, Stefan

2009-03-01

Statistical data from the American Institute of Physics and the National Science Foundation show that only about a third of physics graduates get permanent jobs in academia. A few work in government labs and hospitals. The majority of physics Ph.D.s, however, find employment in the private sector (industry). This trend has been increasing, i.e., recent Ph.D.s are even more likely to start careers in industry. Industrial physicists work in small, medium or large companies in a broad range of fields, including aerospace, semiconductors, automotive, energy, information technology, contract research, medical, chemical, optics, etc. They are also represented in fields outside of physics, such as finance. Even the ``inventor'' of the Powerball lottery game is a Ph.D. physicist. In my talk, I will describe pathways to success for an industrial physicist, from the perspective of employment in three different large corporations. Based on the NIST Baldridge criteria of Performance Excellence, I will discuss how to achieve and measure organizational success through focus on products and customers. Individual performance is linked to the goals of the organization. Performance has two components: Goals and behaviors. Both are key to success as an individual contributor or manager.[4pt] References: [0pt] http://www.aip.org/statistics/trends/emptrends.html [0pt] http://www.aps.org/about/governance/committees/commemb/index.cfm [0pt] http://www.quality.nist.gov/

JPRS Report (Erratum), Science & Technology, Japan, Selections from MITI White Paper on Industrial Technology Trends and Issues

DTIC Science & Technology

1989-08-30

year period in the following products: Technology Field Product New materials Composite materials Amorphous alloys Macromolecule separation...plastics 8. Composite materials B. Parts 9. Optical fiber 10. Semiconductor lasers 11. CCD 12. Semiconductor memory elements 13. Microcomputers...separation. Composite materials (containing carbon fiber) (1) Aerospace users required strict specifi cations for carbon fiber, resulting in

Developments in space power components for power management and distribution

NASA Technical Reports Server (NTRS)

Renz, D. D.

1984-01-01

Advanced power electronic components development for space applications is discussed. The components described include transformers, inductors, semiconductor devices such as transistors and diodes, remote power controllers, and transmission lines.

Jet and flash imprint defectivity: assessment and reduction for semiconductor applications

NASA Astrophysics Data System (ADS)

Malloy, Matt; Litt, Lloyd C.; Johnson, Steve; Resnick, Douglas J.; Lovell, David

2011-04-01

Defectivity has been historically identified as a leading technical roadblock to the implementation of nanoimprint lithography for semiconductor high volume manufacturing. The lack of confidence in nanoimprint's ability to meet defect requirements originates in part from the industry's past experiences with 1X lithography and the shortage in end-user generated defect data. SEMATECH has therefore initiated a defect assessment aimed at addressing these concerns. The goal is to determine whether nanoimprint, specifically Jet and Flash Imprint Lithography from Molecular Imprints, is capable of meeting semiconductor industry defect requirements. At this time, several cycles of learning have been completed in SEMATECH's defect assessment, with promising results. J-FIL process random defectivity of < 0.1 def/cm2 has been demonstrated using a 120nm half-pitch template, providing proof of concept that a low defect nanoimprint process is possible. Template defectivity has also improved significantly as shown by a pre-production grade template at 80nm pitch. Cycles of learning continue on feature sizes down to 22nm.

The first principle calculation of two-dimensional Dirac materials

NASA Astrophysics Data System (ADS)

Lu, Jin

2017-12-01

As the size of integrated device becoming increasingly small, from the last century, semiconductor industry is facing the enormous challenge to break the Moore’s law. The development of calculation, communication and automatic control have emergent expectation of new materials at the aspect of semiconductor industrial technology and science. In spite of silicon device, searching the alternative material with outstanding electronic properties has always been a research point. As the discovery of graphene, the research of two-dimensional Dirac material starts to express new vitality. This essay studied the development calculation of 2D material’s mobility and introduce some detailed information of some approximation method of the first principle calculation.

The Study of an Integrated Rating System for Supplier Quality Performance in the Semiconductor Industry

NASA Astrophysics Data System (ADS)

Lee, Yu-Cheng; Yen, Tieh-Min; Tsai, Chih-Hung

This study provides an integrated model of Supplier Quality Performance Assesment (SQPA) activity for the semiconductor industry through introducing the ISO 9001 management framework, Importance-Performance Analysis (IPA) Supplier Quality Performance Assesment and Taguchi`s Signal-to-Noise Ratio (S/N) techniques. This integrated model provides a SQPA methodology to create value for all members under mutual cooperation and trust in the supply chain. This method helps organizations build a complete SQPA framework, linking organizational objectives and SQPA activities to optimize rating techniques to promote supplier quality improvement. The techniques used in SQPA activities are easily understood. A case involving a design house is illustrated to show our model.

Materials and processing approaches for foundry-compatible transient electronics.

PubMed

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A; Song, Enming; Yu, Xinge; Rogers, John A

2017-07-11

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for "green" electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are ( i ) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, ( ii ) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and ( iii ) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

Materials and processing approaches for foundry-compatible transient electronics

NASA Astrophysics Data System (ADS)

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-07-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

Metrology needs for the semiconductor industry over the next decade

NASA Astrophysics Data System (ADS)

Melliar-Smith, Mark; Diebold, Alain C.

1998-11-01

Metrology will continue to be a key enabler for the development and manufacture of future generations of integrated circuits. During 1997, the Semiconductor Industry Association renewed the National Technology Roadmap for Semiconductors (NTRS) through the 50 nm technology generation and for the first time included a Metrology Roadmap (1). Meeting the needs described in the Metrology Roadmap will be both a technological and financial challenge. In an ideal world, metrology capability would be available at the start of process and tool development, and silicon suppliers would have 450 mm wafer capable metrology tools in time for development of that wafer size. Unfortunately, a majority of the metrology suppliers are small companies that typically can't afford the additional two to three year wait for return on R&D investment. Therefore, the success of the semiconductor industry demands that we expand cooperation between NIST, SEMATECH, the National Labs, SRC, and the entire community. In this paper, we will discuss several critical metrology topics including the role of sensor-based process control, in-line microscopy, focused measurements for transistor and interconnect fabrication, and development needs. Improvements in in-line microscopy must extend existing critical dimension measurements up to 100 nm generations and new methods may be required for sub 100 nm generations. Through development, existing metrology dielectric thickness and dopant dose and junction methods can be extended to 100 nm, but new and possibly in-situ methods are needed beyond 100 nm. Interconnect process control will undergo change before 100 nm due to the introduction of copper metallization, low dielectric constant interlevel dielectrics, and Damascene process flows.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deri, R J

2011-01-03

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and productionmore » capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and increased reliability. The high-level requirements on the semiconductor lasers involve reliability, price points on a price-per-Watt basis, and a set of technical requirements. The technical requirements for the amplifier design in reference 1 are discussed in detail and are summarized in Table 1. These values are still subject to changes as the overall laser system continues to be optimized. Since pump costs can be a significant fraction of the overall laser system cost, it is important to achieve sufficiently low price points for these components. At this time, the price target for tenth-of-akind IFE plant is $0.007/Watt for packaged devices. At this target level, the pumps account for approximately one third of the laser cost. The pump lasers should last for the life of the power plant, leading to a target component lifetime requirement of roughly 14 Ghosts, corresponding to a 30 year plant life and 15 Hz repetition rate. An attractive path forward involes pump operation at high output power levels, on a Watts-per-bar (Watts/chip) basis. This reduces the cost of pump power (price-per-Watt), since to first order the unit price does not increase with power/bar. The industry has seen a continual improvement in power output, with current 1 cm-wide bars emitting up to 500 W QCW (quasi-continuous wave). Increased power/bar also facilitates achieving high irradiance in the array plane. On the other hand, increased power implies greater heat loads and (possibly) higher current drive, which will require increased attention to thermal management and parasitic series resistance. Diode chips containing multiple p-n junctions and quantum wells (also called nanostack structures) may provide an additional approach to reduce the peak current.« less

Information Technology and the Third Industrial Revolution.

ERIC Educational Resources Information Center

Fitzsimmons, Joe

1994-01-01

Discusses the so-called third industrial revolution, or the information revolution. Topics addressed include the progression of the revolution in the U.S. economy, in Europe, and in Third World countries; the empowering technologies, including digital switches, optical fiber, semiconductors, CD-ROM, networks, and combining technologies; and future…

Technical change in US industry: A cross-industry analysis

NASA Technical Reports Server (NTRS)

Nelson, R. R. (Editor)

1981-01-01

The nature of the public policies which have influenced the pace and pattern of technical progress in a number of American industries is studied with the view of assessing the broad effects of these policies. The industries studied are agriculture, pharmaceuticals, semiconductors, computers, civil aircraft, automobiles and residential construction. The policies considered include research and development funding as well as government procurement, education, information dissemination, patent protection, licensing, regulations, and anti-trust policies.

Multinary I-III-VI2 and I2-II-IV-VI4 Semiconductor Nanostructures for Photocatalytic Applications.

PubMed

Regulacio, Michelle D; Han, Ming-Yong

2016-03-15

Semiconductor nanostructures that can effectively serve as light-responsive photocatalysts have been of considerable interest over the past decade. This is because their use in light-induced photocatalysis can potentially address some of the most serious environmental and energy-related concerns facing the world today. One important application is photocatalytic hydrogen production from water under solar radiation. It is regarded as a clean and sustainable approach to hydrogen fuel generation because it makes use of renewable resources (i.e., sunlight and water), does not involve fossil fuel consumption, and does not result in environmental pollution or greenhouse gas emission. Another notable application is the photocatalytic degradation of nonbiodegradable dyes, which offers an effective way of ridding industrial wastewater of toxic organic pollutants prior to its release into the environment. Metal oxide semiconductors (e.g., TiO2) are the most widely studied class of semiconductor photocatalysts. Their nanostructured forms have been reported to efficiently generate hydrogen from water and effectively degrade organic dyes under ultraviolet-light irradiation. However, the wide band gap characteristic of most metal oxides precludes absorption of light in the visible region, which makes up a considerable portion of the solar radiation spectrum. Meanwhile, nanostructures of cadmium chalcogenide semiconductors (e.g., CdS), with their relatively narrow band gap that can be easily adjusted through size control and alloying, have displayed immense potential as visible-light-responsive photocatalysts, but the intrinsic toxicity of cadmium poses potential risks to human health and the environment. In developing new nanostructured semiconductors for light-driven photocatalysis, it is important to choose a semiconducting material that has a high absorption coefficient over a wide spectral range and is safe for use in real-world settings. Among the most promising candidates are the multinary chalcogenide semiconductors (MCSs), which include the ternary I-III-VI2 semiconductors (e.g., AgGaS2, CuInS2, and CuInSe2) and the quaternary I2-II-IV-VI4 semiconductors (e.g., Cu2ZnGeS4, Cu2ZnSnS4, and Ag2ZnSnS4). These inorganic compounds consist of environmentally benign elemental components, exhibit excellent light-harvesting properties, and possess band gap energies that are well-suited for solar photon absorption. Moreover, the band structures of these materials can be conveniently modified through alloying to boost their ability to harvest visible photons. In this Account, we provide a summary of recent research on the use of ternary I-III-VI2 and quaternary I2-II-IV-VI4 semiconductor nanostructures for light-induced photocatalytic applications, with focus on hydrogen production and organic dye degradation. We include a review of the solution-based methods that have been employed to prepare multinary chalcogenide semiconductor nanostructures of varying compositions, sizes, shapes, and crystal structures, which are factors that are known to have significant influence on the photocatalytic activity of semiconductor photocatalysts. The enhancement of photocatalytic performance through creation of hybrid nanoscale architectures is also presented. Lastly, views on the current challenges and future directions are discussed in the concluding section.

40 CFR 469.18 - Pretreatment standards for new sources (PSNS).

Code of Federal Regulations, 2011 CFR

2011-07-01

...) EFFLUENT GUIDELINES AND STANDARDS ELECTRICAL AND ELECTRONIC COMPONENTS POINT SOURCE CATEGORY Semiconductor...): (a) Subpart A—Semiconductor PSNS Effluent Limitations Pollutant or pollutant property Maximum for any... Total toxic organics. 2 Not applicable. (b) A new source submitting a certification in lieu of...

Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

NASA Technical Reports Server (NTRS)

Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

1996-01-01

Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

PubMed

Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

2012-08-28

Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1973-01-01

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Microwave Sintering of Ceramic Materials for Industrial Application Final Report CRADA No. TC-1116-95

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caplan, M.; Tandon, R.; Callis, R.

The goal of this project was to develop the commercial capability in the US to sinter alumina oxide ceramic parts for the semiconductor manufacturing equipment industry. We planned to use the millimeter microwave (30 GHz) sintering system first developed by IAP in Russia.

Industrial Electronics II for ICT. Student's Manual.

ERIC Educational Resources Information Center

Snider, Bob

This student manual contains the following six units for classroom and laboratory experiences in high school industrial electronics: (1) introduction and review of DC and AC circuits; (2) semiconductors; (3) integrated circuits; (4) digital basics; (5) complex digital circuits; and (6) computer circuits. The units include unit objectives, specific…

Development of Nanomechanical Sensors for Breast Cancer Biomarkers

DTIC Science & Technology

2008-06-01

semiconductor industry in developing large scale integrated circuits at very lost cost can lead to similar breakthroughs in array sensors for biomolecules of...insulated from the serum or buffer. The entire device is mounted onto a semiconductor chip carrier, for easy integration with electronics. Figure 3...Keithley 2400 source meter. The ac modulation and the dc bias are added by a noninverting summing circuit, which is integrated with the preamplifier

Contention Bounds for Combinations of Computation Graphs and Network Topologies

DTIC Science & Technology

2014-08-08

member of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and ASPIRE Lab industrial sponsors and affiliates Intel...Google, Nokia, NVIDIA , Oracle, MathWorks and Samsung. Also funded by U.S. DOE Office of Science, Office of Advanced Scientific Computing Research...DARPA Award Number HR0011-12-2- 0016, the Center for Future Architecture Research, a mem- ber of STARnet, a Semiconductor Research Corporation

Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts

NASA Astrophysics Data System (ADS)

Wu, Wei; Changzhong Jiang, Affc; Roy, Vellaisamy A. L.

2014-11-01

Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed.

Use of reverse osmosis membranes to remove perfluorooctane sulfonate (PFOS) from semiconductor wastewater.

PubMed

Tang, Chuyang Y; Fu, Q Shiang; Robertson, A P; Criddle, Craig S; Leckie, James O

2006-12-01

Perfluorooctane sulfonate (PFOS) and related substances are persistent, bioaccumulative, and toxic, and thus of substantial environmental concern. PFOS is an essential photolithographic chemical in the semiconductor industry with no substitutes yet identified. The industry seeks effective treatment technologies. The feasibility of using reverse osmosis (RO) membranes for treating semiconductor wastewater containing PFOS has been investigated. Commercial RO membranes were characterized in terms of permeability, salt rejection, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and membrane surface zeta potential (streaming potential measurements). Filtration tests were performed to determine the membrane flux and PFOS rejection. Over a wide range of feed concentrations (0.5 - 1500 ppm), the RO membranes generally rejected 99% or more of the PFOS. Rejection was better for tighter membranes, but was not affected by membrane zeta potential. Flux decreased with increasing PFOS concentration. While the flux reduction was severe for a loose RO membrane probably due to its higher initial flux, very stable flux was maintained for tighter membranes. At a very high feed concentration (about 500 ppm), all the membranes exhibited an identical stable flux. Isopropyl alcohol, present in some semiconductor wastewaters, had a detrimental effect on membrane flux. Where present it needs to be removed from the wastewater prior to using RO membranes.

40 CFR 469.16 - Pretreatment standards for existing sources (PSES).

Code of Federal Regulations, 2011 CFR

2011-07-01

...) EFFLUENT GUIDELINES AND STANDARDS ELECTRICAL AND ELECTRONIC COMPONENTS POINT SOURCE CATEGORY Semiconductor... for existing sources (PSES): (a) Subpart A—Semiconductor PSES Effluent Limitations Pollutant or... liter (mg/l) TTO 1 1.37 (2) 1 Total toxic organics. 2 Not applicable. (b) An existing source submitting...

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.

2003-01-01

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Total-dose radiation effects data for semiconductor devices, volume 1. [radiation resistance of components for the Galileo Project

NASA Technical Reports Server (NTRS)

Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

1981-01-01

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

A Semiconductor Microlaser for Intracavity Flow Cytometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhil, O.; Copeland, G.C.; Dunne, J.L.

1999-01-20

Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

PubMed

Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

2017-06-01

A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

A semiconductor bridge ignited hot gas piston ejector

NASA Technical Reports Server (NTRS)

Grubelich, M. C.; Bickes, Robert W., Jr.

1993-01-01

The topics are presented in viewgraph form and include the following: semiconductor bridge technology (SCB); SCB philosophy; technology transfer; simplified sketch of SCB; SCB processing; SCB design; SCB test assembly; 5 mJ SCB burst based on a polaroid photograph; micro-convective heat transfer hypothesis; SCB fire set; comparison of SCB and hot-wire actuators; satellite firing sets; logic fire set; SCB smart component; SCB smart firing set; semiconductor design considerations; and the adjustable actuator system.

High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline

NASA Astrophysics Data System (ADS)

Huang, Changbao; Wu, Haixin; Xiao, Ruichun; Chen, Shijing; Ma, Jiaren

2018-06-01

The pnictide and chalcogenide semiconductors are promising materials for the applications in the field of photoelectric. High-purity and high-volume polycrystalline required in the real-world applications is hard to be synthesized due to the high vapor pressure of phosphorus and sulfur components at high temperature. A new high-pressure-resisted method was used to investigate the synthesis of the nonlinear-optical semiconductor ZnGeP2. The high-purity ZnGeP2 polycrystalline material of approximately 500 g was synthesized in one run, which enables the preparation of nominally stoichiometric material. Since increasing internal pressure resistance of quartz crucible and reducing the reaction space, the high-pressure-resisted method can be used to rapidly synthesize other pnictide and chalcogenide semiconductors and control the components ratio.

Time-Resolved Photoluminescence Microscopy for the Analysis of Semiconductor-Based Paint Layers

PubMed Central

Mosca, Sara; Gonzalez, Victor; Eveno, Myriam

2017-01-01

In conservation, science semiconductors occur as the constituent matter of the so-called semiconductor pigments, produced following the Industrial Revolution and extensively used by modern painters. With recent research highlighting the occurrence of various degradation phenomena in semiconductor paints, it is clear that their detection by conventional optical fluorescence imaging and microscopy is limited by the complexity of historical painting materials. Here, we illustrate and prove the capabilities of time-resolved photoluminescence (TRPL) microscopy, equipped with both spectral and lifetime sensitivity at timescales ranging from nanoseconds to hundreds of microseconds, for the analysis of cross-sections of paint layers made of luminescent semiconductor pigments. The method is sensitive to heterogeneities within micro-samples and provides valuable information for the interpretation of the nature of the emissions in samples. A case study is presented on micro samples from a painting by Henri Matisse and serves to demonstrate how TRPL can be used to identify the semiconductor pigments zinc white and cadmium yellow, and to inform future investigations of the degradation of a cadmium yellow paint. PMID:29160862

Absorption properties of metal-semiconductor hybrid nanoparticles.

PubMed

Shaviv, Ehud; Schubert, Olaf; Alves-Santos, Marcelo; Goldoni, Guido; Di Felice, Rosa; Vallée, Fabrice; Del Fatti, Natalia; Banin, Uri; Sönnichsen, Carsten

2011-06-28

The optical response of hybrid metal-semiconductor nanoparticles exhibits different behaviors due to the proximity between the disparate materials. For some hybrid systems, such as CdS-Au matchstick-shaped hybrids, the particles essentially retain the optical properties of their original components, with minor changes. Other systems, such as CdSe-Au dumbbell-shaped nanoparticles, exhibit significant change in the optical properties due to strong coupling between the two materials. Here, we study the absorption of these hybrids by comparing experimental results with simulations using the discrete dipole approximation method (DDA) employing dielectric functions of the bare components as inputs. For CdS-Au nanoparticles, the DDA simulation provides insights on the gold tip shape and its interface with the semiconductor, information that is difficult to acquire by experimental means alone. Furthermore, the qualitative agreement between DDA simulations and experimental data for CdS-Au implies that most effects influencing the absorption of this hybrid system are well described by local dielectric functions obtained separately for bare gold and CdS nanoparticles. For dumbbell shaped CdSe-Au, we find a shortcoming of the electrodynamic model, as it does not predict the "washing out" of the optical features of the semiconductor and the metal observed experimentally. The difference between experiment and theory is ascribed to strong interaction of the metal and semiconductor excitations, which spectrally overlap in the CdSe case. The present study exemplifies the employment of theoretical approaches used to describe the optical properties of semiconductors and metal nanoparticles, to achieve better understanding of the behavior of metal-semiconductor hybrid nanoparticles.

Organic Donor-Acceptor Complexes as Novel Organic Semiconductors.

PubMed

Zhang, Jing; Xu, Wei; Sheng, Peng; Zhao, Guangyao; Zhu, Daoben

2017-07-18

Organic donor-acceptor (DA) complexes have attracted wide attention in recent decades, resulting in the rapid development of organic binary system electronics. The design and synthesis of organic DA complexes with a variety of component structures have mainly focused on metallicity (or even superconductivity), emission, or ferroelectricity studies. Further efforts have been made in high-performance electronic investigations. The chemical versatility of organic semiconductors provides DA complexes with a great number of possibilities for semiconducting applications. Organic DA complexes extend the semiconductor family and promote charge separation and transport in organic field-effect transistors (OFETs) and organic photovoltaics (OPVs). In OFETs, the organic complex serves as an active layer across extraordinary charge pathways, ensuring the efficient transport of induced charges. Although an increasing number of organic semiconductors have been reported to exhibit good p- or n-type properties (mobilities higher than 1 or even 10 cm 2 V -1 s -1 ), critical scientific challenges remain in utilizing the advantages of existing semiconductor materials for more and wider applications while maintaining less complicated synthetic or device fabrication processes. DA complex materials have revealed new insight: their unique molecular packing and structure-property relationships. The combination of donors and acceptors could offer practical advantages compared with their unimolecular materials. First, growing crystals of DA complexes with densely packed structures will reduce impurities and traps from the self-assembly process. Second, complexes based on the original structural components could form superior mixture stacking, which can facilitate charge transport depending on the driving force in the coassembly process. Third, the effective use of organic semiconductors can lead to tunable band structures, allowing the operation mode (p- or n-type) of the transistor to be systematically controlled by changing the components. Finally, theoretical calculations based on cocrystals with unique stacking could widen our understanding of structure-property relationships and in turn help us design high-performance semiconductors based on DA complexes. In this Account, we focus on discussing organic DA complexes as a new class of semiconducting materials, including their design, growth methods, packing modes, charge-transport properties, and structure-property relationships. We have also fabricated and investigated devices based on these binary crystals. This interdisciplinary work combines techniques from the fields of self-assembly, crystallography, condensed-matter physics, and theoretical chemistry. Researchers have designed new complex systems, including donor and acceptor compounds that self-assemble in feasible ways into highly ordered cocrystals. We demonstrate that using this crystallization method can easily realize ambipolar or unipolar transport. To further improve device performance, we propose several design strategies, such as using new kinds of donors and acceptors, modulating the energy alignment of the donor (ionization potential, IP) and acceptor (electron affinity, EA) components, and extending the π-conjugated backbones. In addition, we have found that when we use molecular "doping" (2:1 cocrystallization), the charge-transport nature of organic semiconductors can be switched from hole-transport-dominated to electron-transport-dominated. We expect that the formation of cocrystals through the complexation of organic donor and acceptor species will serve as a new strategy to develop semiconductors for organic electronics with superior performances over their corresponding individual components.

Polycrystalline silicon material availability and market pricing outlook for 1980 through 1988

NASA Technical Reports Server (NTRS)

Costogue, E. N.; Ferber, R. R.

1984-01-01

The results of the second JPL update to an original report to assess the availability and prices of polycrystalline Si for solar cells in the 1983-88 interval are reported. It is noted that the demand for poly-Si for solar cells competes with the demand for the same material for semiconductors, although the solar cell industry can use material rejected from the semiconductor industry. A sufficient supply is projected for the 6 yr period, rising from 3224 metric tons to 10,220 metric tons in 1988, with prices dropping from the 1980 level of $140/kg to $25/kg. The price reduction and improved production are noted to be due in large part to DOE efforts at defining lower-cost production processes.

Measurements of Thermophysical Properties of Molten Silicon and Geranium

NASA Technical Reports Server (NTRS)

Rhim, Won-Kyu

2001-01-01

The objective of this ground base program is to measure thermophysical properties of molten/ undercooled silicon, germanium, and Si-Ge alloys using a high temperature electrostatic levitator and in clearly assessing the need of the microgravity environment to achieve the objective with higher degrees of accuracy. Silicon and germanium are two of the most important semiconductors for industrial applications: silicon is unsurpassed as a microelectronics material, occupying more than 95% of the electronics market. Si-Ge alloy is attracting keen interest for advanced electronic and optoelectronic applications in view of its variable band gap and lattice parameter depending upon its composition. Accurate thermophysical properties of these materials are very much needed in the semiconductor industry for the growth of large high quality crystals.

Computing technology in the 1980's. [computers

NASA Technical Reports Server (NTRS)

Stone, H. S.

1978-01-01

Advances in computing technology have been led by consistently improving semiconductor technology. The semiconductor industry has turned out ever faster, smaller, and less expensive devices since transistorized computers were first introduced 20 years ago. For the next decade, there appear to be new advances possible, with the rate of introduction of improved devices at least equal to the historic trends. The implication of these projections is that computers will enter new markets and will truly be pervasive in business, home, and factory as their cost diminishes and their computational power expands to new levels. The computer industry as we know it today will be greatly altered in the next decade, primarily because the raw computer system will give way to computer-based turn-key information and control systems.

Fbis report. Science and technology: Economic review, September 19, 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1995-09-19

;Partial Contents: Germany: Braunschweig University Tests Organic Semiconductors; France: Ariane-5 Tests Suspended; First Tests in Euro-Russian RECORD Rocket Engine Program; France: Renault`s Multi-Model Assembly Line Presented; Germany: New High Speed Trains Under Development; France: Matra Test Drone, Missile Systems; France: Experimental Project for Automobile Recycling; Germany: Survey of Flexible Manufacturing Developments; Germany: Heinrich Hertz Institute Produces Polymer-Based Circuit; French Firms Introduce Computerized Control Room for Nuclear Plants; German Machine Tool Industry Calls for Information Technology Projects; Germany: R&D Achievements in Digital HDTV Reported; Hungary: Secondary Telecommunications Networks Described; EU: Mergers in Pharmaceutical Industry Reported; SGS-Thomson Business Performance Analyzed; Germany`s Siemensmore » Invest Heavily in UK Semiconductor Plant.« less

The floating-gate non-volatile semiconductor memory--from invention to the digital age.

PubMed

Sze, S M

2012-10-01

In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

Occupational health provision and health surveillance in the semiconductor industry.

PubMed

Kinoulty, Mary; Williams, Nerys

2006-03-01

To identify the nature of occupational health provision in UK semiconductor-manufacturing plants. To identify the level of industry compliance with legal health surveillance requirements. A national inspection programme was carried out by Health & Safety Executive inspectors using a developed protocol. A wide range of occupational health provision was identified from none to use of an accredited specialist. The majority of work was of a reactive nature even where there was specialist occupational health input. Seven companies were identified as not meeting legal compliance and one as having unacceptable compliance for health surveillance. The spectrum of occupational health provision was very wide. Where health surveillance was provided, it was poorly targeted with limited interpretation and feedback to management.

Body of Knowledge for Silicon Carbide Power Electronics

NASA Technical Reports Server (NTRS)

Boomer, Kristen; Lauenstein, Jean-Marie; Hammoud, Ahmad

2016-01-01

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

MEMS Device Being Developed for Active Cooling and Temperature Control

NASA Technical Reports Server (NTRS)

Moran, Matthew E.

2001-01-01

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) is currently under development at the NASA Glenn Research Center to meet this need. It uses a thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface. The device can be used strictly in the cooling mode, or it can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly are accomplished by wet etching and wafer bonding techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces and limited failure modes, and minimal induced vibration.

Dispersion dependence of second-order refractive index and complex third-order optical susceptibility in oxide glasses

NASA Astrophysics Data System (ADS)

Abdel Wahab, F. A.; El-Diasty, Fouad; Abdel-Baki, Manal

2009-10-01

A method correlates Fresnel-based spectrophotometric measurements and Lorentz dispersion theory is presented to study the dispersion of nonlinear optical parameters in particularly oxide glasses in a very wide range of angular frequency. The second-order refractive index and third-order optical susceptibility of Cr-doped glasses are determined from linear refractive index. Furthermore, both real and imaginary components of the complex susceptibility are carried out. The study reveals the importance of determining the dispersion of nonlinear absorption (two-photon absorption coefficient) to find the maximum resonant and nonresonant susceptibilities of investigated glasses. The present method is applied on Cr-doped lithium aluminum silicate (LAS) glasses due to their semiconductor-like behavior and also to their application in laser industry.

Temperature-dependent mechanical behavior of silicon dioxide, gold and gold-vanadium thin films for VLSI integrated circuits and MicroElectroMechanical systems (MEMs)

NASA Astrophysics Data System (ADS)

Lin, Ming-Tzer

The Semiconductor Industry has grown rapidly in the last twenty years. The national technology roadmap for semiconductors plans for developing the complexity and packing density of semiconductor devices into the next decade, allowing ever smaller and more densely packed structures to be fabricated. Recently, MEMS (Micro-Electro-Mechanical Systems) have become important in modern technology. The goal of MEMs is to integrate many types of miniature devices on a single chip, creating a new micro-world. The oxidation of silicon is one of the most important processes in semiconductor technology. Producing high-quality IC's and MEMS devices requires an understanding of the basic oxidation mechanism. In addition, for the reliability of IC's and MEMS devices, the mechanical properties of the oxide play a critical role. There has been an apparent convergence of opinion on the relevant mechanism leading to the "standard computational model" for stress effects on silicon oxidation. This model has recently become suspect. Most of the reasonably direct experimental data on the flow properties of SiO 2 thin film do not support a stress-dependent viscosity of the sort envisioned by the model. Gold and gold vanadium alloys are used in electrical interconnections and in radio frequency switch contacts for the semiconductor industry, MEMs sensors for the aerospace industry and also in brain probes by the bioelectronics mechanical industry. Despite the strong potential usage of gold and gold vanadium thin films at the small scale, very little is known about their mechanical properties. Our goal was to experimentally investigate stress and its influence on SiO2 thin films and the mechanical properties of gold and gold vanadium thin films at room temperature and at elevated temperature of different vanadium concentration. We found that the application of relatively small amounts of bending to an oxidizing silicon substrate leads to significant decreases in oxide thickness in the ultrathin oxide regime. Both tensile and compressive bending retard oxide growth, although compressive bending results in somewhat thinner oxides than does tensile bending. We also determined the modulus of gold and gold vanadium, and discovered that there is some evidence for a vanadium concentration dependence of the mechanical properties.

Radiation immune RAM semiconductor technology for the 80's. [Random Access Memory

NASA Technical Reports Server (NTRS)

Hanna, W. A.; Panagos, P.

1983-01-01

This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

Electronics Industry Study Report: Semiconductors and Defense Electronics

DTIC Science & Technology

2003-01-01

Access Memory (DRAM) chips and microprocessors. Samsung , Micron, Hynix, and Infineon control almost three-fourths of the DRAM market,8 while Intel alone...Country 2001 Sales ($B) 2002 Sales ($B) % Change % 2002 Mkt 1 1 Intel U.S. 23.7 24.0 1% 16.9% 2 3 Samsung Semiconductor S. Korea 6.3...located in four major regions: the United States, Europe, Japan, and the Asia-Pacific region (includes South Korea, China, Singapore, Malaysia , Taiwan

Electrostatic separation for recycling conductors, semiconductors, and nonconductors from electronic waste.

PubMed

Xue, Mianqiang; Yan, Guoqing; Li, Jia; Xu, Zhenming

2012-10-02

Electrostatic separation has been widely used to separate conductors and nonconductors for recycling e-waste. However, the components of e-waste are complex, which can be classified as conductors, semiconductors, and nonconductors according to their conducting properties. In this work, we made a novel attempt to recover the mixtures containing conductors (copper), semiconductors (extrinsic silicon), and nonconductors (woven glass reinforced resin) by electrostatic separation. The results of binary mixtures separation show that the separation of conductor and nonconductor, semiconductor and nonconductor need a higher voltage level while the separation of conductor and semiconductor needs a higher roll speed. Furthermore, the semiconductor separation efficiency is more sensitive to the high voltage level and the roll speed than the conductor separation efficiency. An integrated process was proposed for the multiple mixtures separation. The separation efficiency of conductors and semiconductors can reach 82.5% and 88%, respectively. This study contributes to the efficient recycling of valuable resources from e-waste.

Sensors, nano-electronics and photonics for the Army of 2030 and beyond

NASA Astrophysics Data System (ADS)

Perconti, Philip; Alberts, W. C. K.; Bajaj, Jagmohan; Schuster, Jonathan; Reed, Meredith

2016-02-01

The US Army's future operating concept will rely heavily on sensors, nano-electronics and photonics technologies to rapidly develop situational understanding in challenging and complex environments. Recent technology breakthroughs in integrated 3D multiscale semiconductor modeling (from atoms-to-sensors), combined with ARL's Open Campus business model for collaborative research provide a unique opportunity to accelerate the adoption of new technology for reduced size, weight, power, and cost of Army equipment. This paper presents recent research efforts on multi-scale modeling at the US Army Research Laboratory (ARL) and proposes the establishment of a modeling consortium or center for semiconductor materials modeling. ARL's proposed Center for Semiconductor Materials Modeling brings together government, academia, and industry in a collaborative fashion to continuously push semiconductor research forward for the mutual benefit of all Army partners.

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

NASA Astrophysics Data System (ADS)

Biyikli, Necmi; Haider, Ali

2017-09-01

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

Research and Development Strategies in the Semiconductor Industry

NASA Astrophysics Data System (ADS)

Bowling, Allen

2003-03-01

In the 21st Century semiconductor industry, there is a critical balance between internally funded semiconductor research and development (R) and externally funded R. External R may include jointly-funded research collaborations/partnerships with other device manufacturers, jointly-funded consortia-based R, and individually-funded research programs at universities and other contract research locations. Each of these approaches has merits and each has costs. There is a critical balance between keeping the internal research and development pipeline filled and keeping it from being overspent. To meet both competitive schedule and cost goals, a semiconductor device manufacturer must decide on a model for selection of internal versus external R. Today, one of the most critical decisions is whether or not to do semiconductor research and development on 300 mm silicon wafers. Equipment suppliers are doing first development on 300 mm equipment. So, for the device manufacturer, there is a balance between the cost of doing development on 300 mm wafers and the development time schedule driven by equipment availability. In the face of these cost and schedule elements, device manufacturers are looking to consortia such as SEMATECH, SRC, and SRC MARCO for early development and screening of new materials and device structure approaches. This also causes much more close development collaboration between device manufacturer and equipment supplier. Many device manufacturers are also making use of direct contract research with universities and other contract-research organizations, such as IMEC, LETI, and other government-funded research organizations around the world. To get the most out of these external research interactions, the company must develop a strategy for management and technology integration of external R.

Near-chip compliant layer for reducing perimeter stress during assembly process

DOEpatents

Schultz, Mark D.; Takken, Todd E.; Tian, Shurong; Yao, Yuan

2018-03-20

A heat source (single semiconductor chip or group of closely spaced semiconductor chips of similar height) is provided on a first side of a substrate, which substrate has on said first side a support member comprising a compressible material. A heat removal component, oriented at an angle to said heat source, is brought into proximity of said heat source such that said heat removal component contacts said support member prior to contacting said heat source. Said heat removal component is assembled to said heat source such that said support member at least partially absorbs global inequality of force that would otherwise be applied to said heat source, absent said support member comprising said compressible material.

Near-chip compliant layer for reducing perimeter stress during assembly process

DOEpatents

Schultz, Mark D.; Takken, Todd E.; Tian, Shurong; Yao, Yuan

2017-02-14

A heat source (single semiconductor chip or group of closely spaced semiconductor chips of similar height) is provided on a first side of a substrate, which substrate has on said first side a support member comprising a compressible material. A heat removal component, oriented at an angle to said heat source, is brought into proximity of said heat source such that said heat removal component contacts said support member prior to contacting said heat source. Said heat removal component is assembled to said heat source such that said support member at least partially absorbs global inequality of force that would otherwise be applied to said heat source, absent said support member comprising said compressible material.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

PubMed

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

NASA Astrophysics Data System (ADS)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-09-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Environmental and health risks of chlorine trifluoride (ClF3), an alternative to potent greenhouse gases in the semiconductor industry.

PubMed

Tsai, Wen-Tien

2011-06-15

The first accident involving chlorine trifluoride (ClF(3)) in the history of semiconductor fabrication processes occurred on 28 July 2006 at Hsinchu (Taiwan), resulting in a large release of the highly reactive material and causing the chemical burn to several workers. ClF(3) is used primarily as an in situ cleaning gas in the manufacture of semiconductor silicon-wafer devices in replacement of perfluorocompounds (PFCs) because they have the high potential to contribute significantly to the global warming. This article aimed at reviewing ClF(3) in the physicochemical properties, the industrial uses, and the environmental implications on the basis of its toxicity, reactivity, health hazards and exposure limits. The health hazards of probable decomposition/hydrolysis products from ClF(3) were also evaluated based on their basic physicochemical properties and occupational exposure limits. The occupational exposure assessment was further discussed to understand potentially hazardous risks caused by hydrogen fluoride and fluorides from the decomposition/hydrolysis products of ClF(3). Copyright © 2010 Elsevier B.V. All rights reserved.

Accumulation of trace elements used in semiconductor industry in Formosan squirrel, as a bio-indicator of their exposure, living in Taiwan.

PubMed

Suzuki, Yoshinari; Watanabe, Izumi; Oshida, Tatsuo; Chen, Yen-Jean; Lin, Liang-Kong; Wang, Yu-Huang; Yang, Kouh-Cheng; Kuno, Katsuji

2007-07-01

Concentrations of 17 trace elements were analyzed using inductively coupled plasma-mass spectrometry (ICP-MS) in Formosan squirrels (Callosciurus erythraeus) of Taiwan and Japan to document trace element pollution in Taiwan. High concentrations of elements used to produce semiconductors - Ga, As, Cd, In and Tl - were found in animals captured in Miaoli County, which is the nearest site to Hsinchu City, a chief city of Taiwan's semiconductor industry. Significant correlations between Ga, As, In and Tl were found in the kidney, liver, lung and muscle tissues of Taiwanese squirrels. Hierarchical cluster analysis indicated that Ga, As, In and Tl were of the same clade, indicating that Ga, As, In and Tl were discharged from an identical origin. Molar ratios of Ga/As concentration in lungs of animals captured in Miaoli resembled those of animals after intratracheal administration of particulate gallium arsenide (GaAs). This result might indicate that the higher concentrations of Ga and As in the specimens in Miaoli resulted from atmospheric exposure to GaAs.

Testing methodologies and systems for semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Wieckowski, Michael

Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable of ascertaining SOA performance based solely on the subthreshold differential resistance signature, and are a first step toward the inevitable integration of self-testing circuits into complex optoelectronic systems.

Bi-component semiconductor oxide photoanodes for the photoelectrocatalytic oxidation of organic solutes and vapours: a short review with emphasis to TiO2-WO3 photoanodes.

PubMed

Georgieva, J; Valova, E; Armyanov, S; Philippidis, N; Poulios, I; Sotiropoulos, S

2012-04-15

The use of binary semiconductor oxide anodes for the photoelectrocatalytic oxidation of organic species (both in solution and gas phase) is reviewed. In the first part of the review, the principle of electrically assisted photocatalysis is presented, the preparation methods for the most common semiconductor oxide catalysts are briefly mentioned, while the advantages of appropriately chosen semiconductor combinations for efficient UV and visible (vis) light utilization are highlighted. The second part of the review focuses on the discussion of TiO(2)-WO(3) photoanodes (among the most studied bi-component semiconductor oxide systems) and in particular on coatings prepared by electrodeposition/electrosynthesis or powder mixtures (the focus of the authors' research during recent years). Studies concerning the microscopic, spectroscopic and photoelectrochemical characterization of the catalysts are presented and examples of photoanode activity towards typical dissolved organic contaminants as well as organic vapours are given. Particular emphasis is paid to: (a) The dependence of photoactivity on catalyst morphology and composition and (b) the possibility of carrying out photoelectrochemistry in all-solid cells, thus opening up the opportunity for photoelectrocatalytic air treatment. Copyright © 2011 Elsevier B.V. All rights reserved.

Roles of chemical metrology in electronics industry and associated environment in Korea: a tutorial.

PubMed

Kang, Namgoo; Joong Kim, Kyung; Seog Kim, Jin; Hae Lee, Joung

2015-03-01

Chemical metrology is gaining importance in electronics industry that manufactures semiconductors, electronic displays, and microelectronics. Extensive and growing needs from this industry have raised the significance of accurate measurements of the amount of substances and material properties. For the first time, this paper presents information on how chemical metrology is being applied to meet a variety of needs in the aspects of quality control of electronics products and environmental regulations closely associated with electronics industry. For a better understanding of the roles of the chemical metrology within electronics industry, the recent research activities and results in chemical metrology are presented using typical examples in Korea where electronic industry is leading a national economy. Particular attention is paid to the applications of chemical metrology for advancing emerging electronics technology developments. Such examples are a novel technique for the accurate quantification of gas composition at nano-liter levels within a MEMS package, the surface chemical analysis of a semiconductor device. Typical metrological tools are also presented for the development of certified reference materials for fluorinated greenhouse gases and proficiency testing schemes for heavy metals and chlorinated toxic gas in order to cope properly with environmental issues within electronics industry. In addition, a recent technique is presented for the accurate measurement of the destruction and removal efficiency of a typical greenhouse gas scrubber. Copyright © 2014 Elsevier B.V. All rights reserved.

Strategy, Distinctive Competence, and Organizational Performance.

ERIC Educational Resources Information Center

Snow, Charles C.; Hrebiniak, Lawrence G.

1980-01-01

Focuses on the perceptions of top managers in four industries (plastics, semiconductors, automotives, and air transportation) who examined relationships among strategy, distinctive competence, and organizational performance. (Author/IRT)

Estimates of occupational safety and health impacts resulting from large-scale production of major photovoltaic technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Owens, T.; Ungers, L.; Briggs, T.

1980-08-01

The purpose of this study is to estimate both quantitatively and qualitatively, the worker and societal risks attributable to four photovoltaic cell (solar cell) production processes. Quantitative risk values were determined by use of statistics from the California semiconductor industry. The qualitative risk assessment was performed using a variety of both governmental and private sources of data. The occupational health statistics derived from the semiconductor industry were used to predict injury and fatality levels associated with photovoltaic cell manufacturing. The use of these statistics to characterize the two silicon processes described herein is defensible from the standpoint that many ofmore » the same process steps and materials are used in both the semiconductor and photovoltaic industries. These health statistics are less applicable to the gallium arsenide and cadmium sulfide manufacturing processes, primarily because of differences in the materials utilized. Although such differences tend to discourage any absolute comparisons among the four photovoltaic cell production processes, certain relative comparisons are warranted. To facilitate a risk comparison of the four processes, the number and severity of process-related chemical hazards were assessed. This qualitative hazard assessment addresses both the relative toxicity and the exposure potential of substances in the workplace. In addition to the worker-related hazards, estimates of process-related emissions and wastes are also provided.« less

Overview of atomic layer etching in the semiconductor industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.

2015-03-15

Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article providesmore » defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.« less

Combined VIS-IR spectrometer with vertical probe beam

NASA Astrophysics Data System (ADS)

Protopopov, V.

2017-12-01

A prototype of a combined visible-infrared spectrometer with a vertical probe beam is designed and tested. The combined spectral range is 0.4-20 μ with spatial resolution 1 mm. Basic features include the ability to measure both visibly transparent and opaque substances, as well as buried structures, such as in semiconductor industry; horizontal orientation of a sample, including semiconductor wafers; and reflection mode of operation, delivering twice the sensitivity compared to the transmission mode.

Real-time and online screening method for materials emitting volatile organic compounds

NASA Astrophysics Data System (ADS)

Kim, Changhyuk; Sul, Yong Tae; Pui, David Y. H.

2016-09-01

In the semiconductor industry, volatile organic compounds (VOCs) in the cleanroom air work as airborne molecular contamination, which reduce the production yield of semiconductor chips by forming nanoparticles and haze on silicon wafers and photomasks under ultraviolet irradiation during photolithography processes. Even though VOCs in outdoor air are removed by gas filters, VOCs can be emitted from many kinds of materials used in cleanrooms, such as organic solvents and construction materials (e.g., adhesives, flame retardants and sealants), threatening the production of semiconductors. Therefore, finding new replacements that emit lower VOCs is now essential in the semiconductor industry. In this study, we developed a real-time and online method to screen materials for developing the replacements by converting VOCs into nanoparticles under soft X-ray irradiation. This screening method was applied to measure VOCs emitted from different kinds of organic solvents and adhesives. Our results showed good repeatability and high sensitivity for VOCs, which come from aromatic compounds, some alcohols and all tested adhesives (Super glue and cleanroom-use adhesives). In addition, the overall trend of measured VOCs from cleanroom-use adhesives was well matched with those measured by a commercial thermal desorption-gas chromatography-mass spectrometry, which is a widely used off-line method for analyzing VOCs. Based on the results, this screening method can help accelerate the developing process for reducing VOCs in cleanrooms.

One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications—a review

NASA Astrophysics Data System (ADS)

Ray, Samit K.; Katiyar, Ajit K.; Raychaudhuri, Arup K.

2017-03-01

Remarkable progress has been made in the field of one-dimensional semiconductor nanostructures for electronic and photonic devices. Group-IV semiconductors and their heterostructures have dominated the years of success in microelectronic industry. However their use in photonic devices is limited since they exhibit poor optical activity due to indirect band gap nature of Si and Ge. Reducing their dimensions below a characteristic length scale of various fundamental parameters like exciton Bohr radius, phonon mean free path, critical size of magnetic domains, exciton diffusion length etc result in the significant modification of bulk properties. In particular, light emission from Si/Ge nanowires due to quantum confinement, strain induced band structure modification and impurity doping may lead to the integration of photonic components with mature silicon CMOS technology in near future. Several promising applications based on Si and Ge nanowires have already been well established and studied, while others are now at the early demonstration stage. The control over various forms of energy and carrier transport through the unconstrained dimension makes Si and Ge nanowires a promising platform to manufacture advanced solid-state devices. This review presents the progress of the research with emphasis on their potential application of Si/Ge nanowires and their heterostructures for electronic, photonic, sensing and energy devices.

A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation

NASA Astrophysics Data System (ADS)

Francis, Laurent A.; Sedki, Amor; André, Nicolas; Kilchytska, Valéria; Gérard, Pierre; Ali, Zeeshan; Udrea, Florin; Flandre, Denis

2018-01-01

In this paper, we study the recovery of onmembrane semiconductor components, such as N-type Field-Effect Transistors (FETs) available in two different channel widths and a Complementary Metal-Oxide-Semiconductor (CMOS) inverter, after the exposure to high dose of proton radiation. Due to the ionizing effect, the electrical characteristics of the components established remarkable shifts, where the threshold voltages showed an average shift of -480 mV and -280 mV respectively for 6 μm and 24 μm N-channel transistors, likewise the inversion point of the inverter showed an important shift of -690 mV. The recovery concept is based mainly on a micro-hotplate, fabricated with backside MEMS micromachining structure and a Silicon-On-Insulator (SOI) technology, ensuring rapid, low power and in situ annealing technique, this method proved its reliability in recent works. Annealing the N-channel transistors and the inverter for 16 min with a temperature of the heater up to 385 °C, guaranteed a partial recovery of the semiconductor based components with a maximum power consumption of 66 mW.

Industry-Oriented Laboratory Development for Mixed-Signal IC Test Education

ERIC Educational Resources Information Center

Hu, J.; Haffner, M.; Yoder, S.; Scott, M.; Reehal, G.; Ismail, M.

2010-01-01

The semiconductor industry is lacking qualified integrated circuit (IC) test engineers to serve in the field of mixed-signal electronics. The absence of mixed-signal IC test education at the collegiate level is cited as one of the main sources for this problem. In response to this situation, the Department of Electrical and Computer Engineering at…

Industrial Applications of Low Temperature Plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bardsley, J N

2001-03-15

The use of low temperature plasmas in industry is illustrated by the discussion of four applications, to lighting, displays, semiconductor manufacturing and pollution control. The type of plasma required for each application is described and typical materials are identified. The need to understand radical formation, ionization and metastable excitation within the discharge and the importance of surface reactions are stressed.

77 FR 1505 - Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions; Notice...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-10

... Freescale Semiconductor, Inc. of Austin, Texas. The complaint alleges violations of section 337 based upon... `455 patent''). The complaint further alleges that an industry in the United States exists as required... televisions that infringe one or more of claims 9 and 10, and whether an industry in the United States exists...

75 FR 5349 - Investigations Regarding Certifications of Eligibility To Apply for Worker Adjustment Assistance

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-02

... Products, LLC (Comp). Walterboro, SC........ 12/16/09 12/09/09 73110 Robin Industries, Inc. Cleveland, OH... Garland Commercial Freeland, PA 12/18/09 12/17/09 Industries, LLC (Comp). 73124 Suite Simplicity, LLC.../09 73126 Frescale Semiconductor, Austin, TX 12/18/09 12/11/09 Inc. (Wkrs). 73127 Freescale...

Computers and Employment.

ERIC Educational Resources Information Center

McConnell, Sheila; And Others

1996-01-01

Includes "Role of Computers in Reshaping the Work Force" (McConnell); "Semiconductors" (Moris); "Computer Manufacturing" (Warnke); "Commercial Banking Transformed by Computer Technology" (Morisi); "Software, Engineering Industries: Threatened by Technological Change?" (Goodman); "Job Creation…

Optics education for machine operators in the semiconductor industry: moving beyond button pushing

NASA Astrophysics Data System (ADS)

Karakekes, Meg; Currier, Deborah

1995-10-01

In the competitive semiconductor manufacturing industry, employees who operate equipment are able to make greater contributions if they understand how the equipment works. By understanding the 'why' behind the 'what', the equipment operators can better partner with other technical staff to produce quality integrated circuits efficiently and effectively. This additional knowledge also opens equipment operators to job enrichment and enlargement opportunities. Advanced Micro Devices (AMD) is in the process of upgrading the skills of its equipment operators. This paper is an overview of a pilot program that employs optics education to upgrade stepper operators' skills. The paper starts with stepper tasks that require optics knowledge, examines teaching methods, reports both end-of-course and three months post-training knowledge retention, and summarizes how the training has impacted the production floor.

Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors

NASA Astrophysics Data System (ADS)

Mascarenhas, Angelo; Fluegel, Brian; Beaton, Dan

Semiconductor strain engineering has become a critical feature of high-performance electronics due to the significant device performance enhancements it enables. These improvements that emerge from strain induced modifications to the electronic band structure necessitate new ultra-sensitive tools for probing strain in semiconductors. Using electronic Raman scattering, we recently showed that it is possible to measure minute amounts of strain in thin semiconductor epilayers. We applied this strain measurement technique to two different semiconductor alloy systems, using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10-4. Comparing our strain sensitivity and signal strength in AlxGa1-xAs with those obtained using the industry-standard technique of phonon Raman scattering we found a sensitivity improvement of ×200, and a signal enhancement of 4 ×103 thus obviating key constraints in semiconductor strain metrology. The sensitivity of this approach rivals that of contemporary techniques and opens up a new realm for optically probing strain effects on electronic band structure. We acknowledge the financial support of the DOE Office of Science, BES under DE-AC36-80GO28308.

Materials and processing approaches for foundry-compatible transient electronics

PubMed Central

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-01-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries. PMID:28652373

Aging of electronics with application to nuclear power plant instrumentation. [PWR; BWR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Jr, R T; Thome, F V; Craft, C M

1983-01-01

A survey to identify areas of needed research to understand aging mechanisms for electronics in nuclear power plant instrumentation has been completed. The emphasis was on electronic components such as semiconductors, capacitors, and resistors used in safety-related instrumentation in the reactor containment area. The environmental and operational stress factors which may produce degradation during long-term operation were identified. Some attention was also given to humidity effects as related to seals and encapsulants, and failures in printed circuit boards and bonds and solder joints. Results suggest that neutron as well as gamma irradiations should be considered in simulating the aging environmentmore » for electronic components. Radiation dose-rate effects in semiconductor devices and organic capacitors need to be further investigated, as well as radiation-voltage bias synergistic effects in semiconductor devices and leakage and permeation of moisture through seals in electronics packages.« less

Porous Diblock Copolymer Thin Films in High-Performance Semiconductor Microelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, C.T.

2011-02-01

The engine fueling more than 40 years of performance improvements in semiconductor integrated circuits (ICs) has been industry's ability to pattern circuit elements at ever-higher resolution and with ever-greater precision. Steady advances in photolithography - the process wherein ultraviolet light chemically changes a photosensitive polymer resist material in order to create a latent image - have resulted in scaling of minimum printed feature sizes from tens of microns during the 1980s to sub-50 nanometer transistor gate lengths in today's state-of-the-art ICs. The history of semiconductor technology scaling as well as future technology requirements is documented in the International Technology Roadmapmore » for Semiconductors (ITRS). The progression of the semiconductor industry to the realm of nanometer-scale sizes has brought enormous challenges to device and circuit fabrication, rendering performance improvements by conventional scaling alone increasingly difficult. Most often this discussion is couched in terms of field effect transistor (FET) feature sizes such as the gate length or gate oxide thickness, however these challenges extend to many other aspects of the IC, including interconnect dimensions and pitch, device packing density, power consumption, and heat dissipation. The ITRS Technology Roadmap forecasts a difficult set of scientific and engineering challenges with no presently-known solutions. The primary focus of this chapter is the research performed at IBM on diblock copolymer films composed of polystyrene (PS) and poly(methyl-methacrylate) (PMMA) (PS-b-PMMA) with total molecular weights M{sub n} in the range of {approx}60K (g/mol) and polydispersities (PD) of {approx}1.1. These materials self assemble to form patterns having feature sizes in the range of 15-20nm. PS-b-PMMA was selected as a self-assembling patterning material due to its compatibility with the semiconductor microelectronics manufacturing infrastructure, as well as the significant body of existing research on understanding its material properties.« less

Environmentally benign semiconductor processing for dielectric etch

NASA Astrophysics Data System (ADS)

Liao, Marci Yi-Ting

Semiconductor processing requires intensive usage of chemicals, electricity, and water. Such intensive resource usage leaves a large impact on the environment. For instance, in Silicon Valley, the semiconductor industry is responsible for 80% of the hazardous waste sites contaminated enough to require government assistance. Research on environmentally benign semiconductor processing is needed to reduce the environmental impact of the semiconductor industry. The focus of this dissertation is on the environmental impact of one aspect of semiconductor processing: patterning of dielectric materials. Plasma etching of silicon dioxide emits perfluorocarbons (PFCs) gases, like C2F6 and CF4, into the atmosphere. These gases are super global warming/greenhouse gases because of their extremely long atmospheric lifetimes and excellent infrared absorption properties. We developed the first inductively coupled plasma (ICP) abatement device for destroying PFCs downstream of a plasma etcher. Destruction efficiencies of 99% and 94% can be obtained for the above mentioned PFCs, by using O 2 as an additive gas. Our results have lead to extensive modeling in academia as well as commercialization of the ICP abatement system. Dielectric patterning of hi-k materials for future device technology brings different environment challenges. The uncertainty of the hi-k material selection and the patterning method need to be addressed. We have evaluated the environmental impact of three different dielectric patterning methods (plasma etch, wet etch and chemical-mechanical polishing), as well as, the transistor device performances associated with the patterning methods. Plasma etching was found to be the most environmentally benign patterning method, which also gives the best device performance. However, the environmental concern for plasma etching is the possibility of cross-contamination from low volatility etch by-products. Therefore, mass transfer in a plasma etcher for a promising hi-k dielectric material, ZrO2, was studied. A novel cross-contamination sampling technique was developed, along with a mass transfer model.

Solar Photovoltaic Array With Mini-Dome Fresnel Lenses

NASA Technical Reports Server (NTRS)

Piszczor, Michael F., Jr.; O'Neill, Mark J.

1994-01-01

Mini-dome Fresnel lenses concentrate sunlight onto individual photovoltaic cells. Facets of Fresnel lens designed to refract incident light at angle of minimum deviation to minimize reflective losses. Prismatic cover on surface of each cell reduces losses by redirecting incident light away from metal contacts toward bulk of semiconductor, where it is usefully absorbed. Simple design of mini-dome concentrator array easily adaptable to automated manufacturing techniques currently used by semiconductor industry. Attractive option for variety of future space missions.

Application of polymer-coated metal-insulator-semiconductor sensors for the detection of dissolved hydrogen

NASA Astrophysics Data System (ADS)

Li, Dongmei; Medlin, J. W.; Bastasz, R.

2006-06-01

The detection of dissolved hydrogen in liquids is crucial to many industrial applications, such as fault detection for oil-filled electrical equipment. To enhance the performance of metal-insulator-semiconductor (MIS) sensors for dissolved hydrogen detection, a palladium MIS sensor has been modified by depositing a polyimide (PI) layer above the palladium surface. Response measurements of the PI-coated sensors in mineral oil indicate that hydrogen is sensitively detected, while the effect of interfering gases on sensor response is minimized.

Cases series of malignant lymphohematopoietic disorder in korean semiconductor industry.

PubMed

Kim, Eun-A; Lee, Hye-Eun; Ryu, Hyung-Woo; Park, Seung-Hyun; Kang, Seong-Kyu

2011-06-01

Seven cases of malignant lymphohematopoietic (LHP) disorder were claimed to have developed from occupational exposure at two plants of a semiconductor company from 2007 to 2010. This study evaluated the possibility of exposure to carcinogenic agents for the cases. Clinical courses were reviewed with assessing possible exposure to carcinogenic agents related to LHP cancers. Chemicals used at six major semiconductor companies in Korea were reviewed. Airborne monitoring for chemicals, including benzene, was conducted and the ionizing radiation dose was measured from 2008 to 2010. The latency of seven cases (five leukemiae, a Non-Hodgkin's lymphoma, and an aplastic anemia) ranged from 16 months to 15 years and 5 months. Most chemical measurements were at levels of less than 10% of the Korean Occupational Exposure Limit value. No carcinogens related to LHP cancers were used or detected. Complete-shielded radiation-generating devices were used, but the ionizing radiation doses were 0.20-0.22 uSv/hr (background level: 0.21 µSv/hr). Airborne benzene was detected at 0.31 ppb when the detection limit was lowered as low as possible. Ethylene oxide and formaldehyde were not found in the cases' processes, while these two were determined to be among the 263 chemicals in the list that was used at the six semiconductor companies at levels lower than 0.1%. Exposures occurring before 2002 could not be assessed because of the lack of information. Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one.

Cases Series of Malignant Lymphohematopoietic Disorder in Korean Semiconductor Industry

PubMed Central

Lee, Hye-Eun; Ryu, Hyung-Woo; Park, Seung-Hyun; Kang, Seong-Kyu

2011-01-01

Objectives Seven cases of malignant lymphohematopoietic (LHP) disorder were claimed to have developed from occupational exposure at two plants of a semiconductor company from 2007 to 2010. This study evaluated the possibility of exposure to carcinogenic agents for the cases. Methods Clinical courses were reviewed with assessing possible exposure to carcinogenic agents related to LHP cancers. Chemicals used at six major semiconductor companies in Korea were reviewed. Airborne monitoring for chemicals, including benzene, was conducted and the ionizing radiation dose was measured from 2008 to 2010. Results The latency of seven cases (five leukemiae, a Non-Hodgkin's lymphoma, and an aplastic anemia) ranged from 16 months to 15 years and 5 months. Most chemical measurements were at levels of less than 10% of the Korean Occupational Exposure Limit value. No carcinogens related to LHP cancers were used or detected. Complete-shielded radiation-generating devices were used, but the ionizing radiation doses were 0.20-0.22 uSv/hr (background level: 0.21 µSv/hr). Airborne benzene was detected at 0.31 ppb when the detection limit was lowered as low as possible. Ethylene oxide and formaldehyde were not found in the cases' processes, while these two were determined to be among the 263 chemicals in the list that was used at the six semiconductor companies at levels lower than 0.1%. Exposures occurring before 2002 could not be assessed because of the lack of information. Conclusion Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one. PMID:22953195

A Microcomputer-Based Program for Printing Check Plots of Integrated Circuits Specified in Caltech Intermediate Form.

DTIC Science & Technology

1984-12-01

only four transistors[5]. Each year since that time, the semiconductor industry has con- sistently improved the quality of the fabrication tech- niques...rarely took place at universities and was almost exclusively confined to industry . IC design techniques were developed, tested, and taught only in the...community, it is not uncommon for industry to borrow ideas and even particular programs from these university designed tools. The Very Large Scale Integration

Economic impact of large public programs: The NASA experience

NASA Technical Reports Server (NTRS)

Ginzburg, E.; Kuhn, J. W.; Schnee, J.; Yavitz, B.

1976-01-01

The economic impact of NASA programs on weather forecasting and the computer and semiconductor industries is discussed. Contributions to the advancement of the science of astronomy are also considered.

IRIS Toxicological Review of Ingested Inorganic Arsenic (2005 ...

EPA Pesticide Factsheets

EPA's Office of Research and Development (ORD), Office of Pesticide Programs (OPP), and Office of Water (OW) requested the SAB to provide advice to the Agency on several issues about the mode of carcinogenic action of various arsenic species and the implications of these issues for EPA's assessment of the cancer hazard and risks of organic and inorganic arsenic. The panel will review an OPP Science Issue Paper (with an attachment prepared by ORD) and a revised hazard and dose response assessment/characterization for inclusion in the Integrated Risk Information System (IRIS) prepared by OW. Inorganic arsenic is used for hardening copper and lead alloys. It also is used in glass manufacturing as a decolorizing and refining agent, as a component of electrical devices, in the semiconductor industry, and as a catalyst in the production of ethylene oxide.

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

PubMed

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

PubMed Central

Long, Rathnait D.; McIntyre, Paul C.

2012-01-01

The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS) devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

Japan Report, Science and Technology.

DTIC Science & Technology

1987-02-06

cyclodextrin, which consists of natural cyclic oligosaccharides . Recently, the author and co-workers have found that methylated CD works as an effective...industry as catalysts for the production of olefin derivatives. This is quite interesting, when we compare it with the shitasu process . Research on...lasers in machin- ing and medicine, particularly in semiconductor processing . According to the Optoelectronic Industry and Technology Development

75 FR 5149 - Employment and Training Administration Investigations Regarding Certifications of Eligibility To...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-02-01

...). 73109 Dayco Products, LLC (Comp). Walterboro, SC........ 12/16/09 12/09/09 73110 Robin Industries, Inc.../17/09 73123 Garland Commercial Freeland, PA 12/18/09 12/17/09 Industries, LLC (Comp). 73124 Suite..., TX 12/18/09 12/16/09 73126 Freescale Semiconductor, Austin, TX 12/18/09 12/11/09 Inc. (Wkrs). 73127...

77 FR 35426 - Certain Radio Frequency Integrated Circuits and Devices Containing Same; Institution of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-13

... U.S.C. 1337, on behalf of Peregrine Semiconductor Corporation of San Diego, California. Supplements... alleges that an industry in the United States exists as required by subsection (a)(2) of section 337. The...; and claims 1, 3, 5, and 6 of the `499 patent, and whether an industry in the United States exists as...

Semiconductor optoelectronic devices for free-space optical communications

NASA Technical Reports Server (NTRS)

Katz, J.

1983-01-01

The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

Advanced process control framework initiative

NASA Astrophysics Data System (ADS)

Hill, Tom; Nettles, Steve

1997-01-01

The semiconductor industry, one the world's most fiercely competitive industries, is driven by increasingly complex process technologies and global competition to improve cycle time, quality, and process flexibility. Due to the complexity of these problems, current process control techniques are generally nonautomated, time-consuming, reactive, nonadaptive, and focused on individual fabrication tools and processes. As the semiconductor industry moves into higher density processes, radical new approaches are required. To address the need for advanced factory-level process control in this environment, Honeywell, Advanced Micro Devices (AMD), and SEMATECH formed the Advanced Process Control Framework Initiative (APCFI) joint research project. The project defines and demonstrates an Advanced Process Control (APC) approach based on SEMATECH's Computer Integrated Manufacturing (CIM) Framework. Its scope includes the coordination of Manufacturing Execution Systems, process control tools, and wafer fabrication equipment to provide necessary process control capabilities. Moreover, it takes advantage of the CIM Framework to integrate and coordinate applications from other suppliers that provide services necessary for the overall system to function. This presentation discusses the key concept of model-based process control that differentiates the APC Framework. This major improvement over current methods enables new systematic process control by linking the knowledge of key process settings to desired product characteristics that reside in models created with commercial model development tools The unique framework-based approach facilitates integration of commercial tools and reuse of their data by tying them together in an object-based structure. The presentation also explores the perspective of each organization's involvement in the APCFI project. Each has complementary goals and expertise to contribute; Honeywell represents the supplier viewpoint, AMD represents the user with 'real customer requirements', and SEMATECH provides a consensus-building organization that widely disseminates technology to suppliers and users in the semiconductor industry that face similar equipment and factory control systems challenges.

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

NASA Astrophysics Data System (ADS)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (<50% spread). The performance of our device demonstrates a feasible path to dramatic improvements in lithographic patterning systems, enabling continued progress in existing industries and opening opportunities in nanomanufacturing.

Accuracy improvement of the H-drive air-levitating wafer inspection stage based on error analysis and compensation

NASA Astrophysics Data System (ADS)

Zhang, Fan; Liu, Pinkuan

2018-04-01

In order to improve the inspection precision of the H-drive air-bearing stage for wafer inspection, in this paper the geometric error of the stage is analyzed and compensated. The relationship between the positioning errors and error sources are initially modeled, and seven error components are identified that are closely related to the inspection accuracy. The most effective factor that affects the geometric error is identified by error sensitivity analysis. Then, the Spearman rank correlation method is applied to find the correlation between different error components, aiming at guiding the accuracy design and error compensation of the stage. Finally, different compensation methods, including the three-error curve interpolation method, the polynomial interpolation method, the Chebyshev polynomial interpolation method, and the B-spline interpolation method, are employed within the full range of the stage, and their results are compared. Simulation and experiment show that the B-spline interpolation method based on the error model has better compensation results. In addition, the research result is valuable for promoting wafer inspection accuracy and will greatly benefit the semiconductor industry.

Surface modifications on InAs decrease indium and arsenic leaching under physiological conditions

NASA Astrophysics Data System (ADS)

Jewett, Scott A.; Yoder, Jeffrey A.; Ivanisevic, Albena

2012-11-01

Devices containing III-V semiconductors such as InAs are increasingly being used in the electronic industry for a variety of optoelectronic applications. Furthermore, the attractive chemical, material, electronic properties make such materials appealing for use in devices designed for biological applications, such as biosensors. However, in biological applications the leaching of toxic materials from these devices could cause harm to cells or tissue. Additionally, after disposal, toxic inorganic materials can leach from devices and buildup in the environment, causing long-term ecological harm. Therefore, the toxicity of these materials along with their stability in physiological conditions are important factors to consider. Surface modifications are one common method of stabilizing semiconductor materials in order to chemically and electronically passivate them. Such surface modifications could also prevent the leaching of toxic materials by preventing the regrowth of the unstable surface oxide layer and by creating an effective barrier between the semiconductor surface and the surrounding environment. In this study, various surface modifications on InAs are developed with the goal of decreasing the leaching of indium and arsenic. The leaching of indium and arsenic from modified substrates was assessed in physiological conditions using inductively coupled plasma mass spectrometry (ICP-MS). Substrates modified with 11-mercapto-1-undecanol (MU) and graft polymerized with poly(ethylene) glycol (PEG) were most effective at preventing indium and arsenic leaching. These surfaces were characterized using contact angle analysis, ellipsometry, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Substrates modified with collagen and synthetic polyelectrolytes were least effective, due to the destructive nature of acidic environments on InAs. The toxicity of modified and unmodified InAs, along with raw indium, arsenic, and PEG components was assessed using zebrafish embryos.

Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

NASA Astrophysics Data System (ADS)

Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

2018-01-01

Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

Compact, Interactive Electric Vehicle Charger: Gallium-Nitride Switch Technology for Bi-directional Battery-to-Grid Charger Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-10-01

ADEPT Project: HRL Laboratories is using gallium nitride (GaN) semiconductors to create battery chargers for electric vehicles (EVs) that are more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger is important because it would help improve the overall performance of the EV. GaN semiconductors process electricity faster than the silicon semiconductors used in most conventional EV battery chargers. These high-speed semiconductors can be paired with lighter-weight electrical circuit components, which helps decrease the overall weight of the EV battery charger. HRL Laboratories is combining the performance advantages of GaN semiconductors with anmore » innovative, interactive battery-to-grid energy distribution design. This design would support 2-way power flow, enabling EV battery chargers to not only draw energy from the power grid, but also store and feed energy back into it.« less

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

Detection of Iberian ham aroma by a semiconductor multisensorial system.

PubMed

Otero, Laura; Horrillo, M A Carmen; García, María; Sayago, Isabel; Aleixandre, Manuel; Fernández, M A Jesús; Arés, Luis; Gutiérrez, Javier

2003-11-01

A semiconductor multisensorial system, based on tin oxide, to control the quality of dry-cured Iberian hams is described. Two types of ham (submitted to different drying temperatures) were selected. Good responses were obtained from the 12 elements forming the multisensor for different operating temperatures. Discrimination between the two types of ham was successfully realised through principal component analysis (PCA).

Optical devices integrated with semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Oh, Kwang R.; Park, Moon S.; Jeong, Jong S.; Baek, Yongsoon; Oh, Dae-Kon

2000-07-01

Semiconductor optical amplifiers (SOA's) have been used as a key optical component for the high capacity communication systems. The monolithic integration is necessary for the stable operation of these devices and the wider applications. In this paper, the coupling technique between different waveguides and the integration of SSC's are discussed and the research results of optical devices integrated with SOA's are presented.

Procedures for Instructional Systems Development

DTIC Science & Technology

1981-09-18

single faults to the circuit and components level. (JTI Task No. TCB-01). Figure III-ll.--Example of a Module Page of a Curriculum Outline. 3 - 80...semiconductor trapezoidal wave generator circuit , multimeter, and oscilloscope measure the output amplitude, rise time, and jump voltage within +/- 10...accuracy. Given a trainer having a semiconductor trapezoidal wave generator circuit , multimeter, and oscilloscope - CONDITION (C) . measure the output

Irradiation properties of T0 chopper components

NASA Astrophysics Data System (ADS)

Itoh, Shinichi; Ueno, Kenji; Ohkubo, Ryuji; Sagehashi, Hidenori; Funahashi, Yoshisato; Yokoo, Tetsuya

2011-10-01

We investigated the irradiation properties of the components of a T0 chopper. The organic materials in the rotor bearing grease, the magnetic fluids in seals, and the rubber in the timing belt, as well as the semiconductor materials in the rotation sensor and motor encoder, were all irradiated with high-energy γ-rays up to 100 kGy. No significant damage that shortens the lifetime of a T0 chopper was observed for the mechanical components. However, the semiconductor components were damaged by the irradiation. For the rotation sensor system detecting the rotor phase, the signal from a marker on the rotor shaft was transmitted outside the shielding by an optical fiber with radiation-proofing and the electrical circuits were removed from the beamline shielding. The lifetime of the motor encoder possibly meets the requirement for the maintenance period of the T0 chopper.

Recovery of hazardous semiconductor-industry sludge as a useful resource.

PubMed

Lee, Tzen-Chin; Liu, Feng-Jiin

2009-06-15

Sludge, a solid waste recovered from wastewater of semiconductor-industries composes of agglomerates of nano-particles like SiO(2) and CaF(2). This sludge deflocculates in acidic and alkaline aqueous solutions into nano-particles smaller than 100 nm. Thus, this sludge is potentially hazardous to water resources when improperly dumped. It can cause considerable air-pollution when fed into rotary-kilns as a raw material for cement production. In this study, dried and pulverized sludge was used to replace 5-20 wt.% Portland cement in cement mortar. The compressive strength of the modified mortar was higher than that of plain cement mortar after curing for 3 days and more. In particular, the strength of mortar with 10 wt.% substitution improved by 25-35% after curing for 7-90 days. TCLP studies reveal no detectable release of heavy metals. Preliminary studies showed that nano-particles deflocculated from the sludge, when cured for up to 3 days retain in the modified mortar their nano-size, which become large-sized hydration compounds that contribute to the final mortar strength. Semiconductor sludge can thus be utilized as a useful resource to replace portion of cement in cement mortar, thereby avoiding their potential hazard on the environment.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

PubMed Central

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

2015-01-01

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics. PMID:26411932

Plasma Diagnostics: Use and Justification in an Industrial Environment

NASA Astrophysics Data System (ADS)

Loewenhardt, Peter

1998-10-01

The usefulness and importance of plasma diagnostics have played a major role in the development of plasma processing tools in the semiconductor industry. As can be seen through marketing materials from semiconductor equipment manufacturers, results from plasma diagnostic equipment can be a powerful tool in selling the technological leadership of tool design. Some diagnostics have long been used for simple process control such as optical emission for endpoint determination, but in recent years more sophisticated and involved diagnostic tools have been utilized in chamber and plasma source development and optimization. It is now common to find an assortment of tools at semiconductor equipment companies such as Langmuir probes, mass spectrometers, spatial optical emission probes, impedance, ion energy and ion flux probes. An outline of how the importance of plasma diagnostics has grown at an equipment manufacturer over the last decade will be given, with examples of significant and useful results obtained. Examples will include the development and optimization of an inductive plasma source, trends and hardware effects on ion energy distributions, mass spectrometry influences on process development and investigations of plasma-wall interactions. Plasma diagnostic focus, in-house development and proliferation in an environment where financial justification requirements are both strong and necessary will be discussed.

Scalable sub-micron patterning of organic materials toward high density soft electronics

DOE PAGES

Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun; ...

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

NASA Astrophysics Data System (ADS)

Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

2018-01-01

In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

EPE analysis of sub-N10 BEoL flow with and without fully self-aligned via using Coventor SEMulator3D

NASA Astrophysics Data System (ADS)

Franke, Joern-Holger; Gallagher, Matt; Murdoch, Gayle; Halder, Sandip; Juncker, Aurelie; Clark, William

2017-03-01

During the last few decades, the semiconductor industry has been able to scale device performance up while driving costs down. What started off as simple geometrical scaling, driven mostly by advances in lithography, has recently been accompanied by advances in processing techniques and in device architectures. The trend to combine efforts using process technology and lithography is expected to intensify, as further scaling becomes ever more difficult. One promising component of future nodes are "scaling boosters", i.e. processing techniques that enable further scaling. An indispensable component in developing these ever more complex processing techniques is semiconductor process modeling software. Visualization of complex 3D structures in SEMulator3D, along with budget analysis on film thicknesses, CD and etch budgets, allow process integrators to compare flows before any physical wafers are run. Hundreds of "virtual" wafers allow comparison of different processing approaches, along with EUV or DUV patterning options for defined layers and different overlay schemes. This "virtual fabrication" technology produces massively parallel process variation studies that would be highly time-consuming or expensive in experiment. Here, we focus on one particular scaling booster, the fully self-aligned via (FSAV). We compare metal-via-metal (mevia-me) chains with self-aligned and fully-self-aligned via's using a calibrated model for imec's N7 BEoL flow. To model overall variability, 3D Monte Carlo modeling of as many variability sources as possible is critical. We use Coventor SEMulator3D to extract minimum me-me distances and contact areas and show how fully self-aligned vias allow a better me-via distance control and tighter via-me contact area variability compared with the standard self-aligned via (SAV) approach.

Career Opportunities for Physicists in the Micro Electronics Industry

NASA Astrophysics Data System (ADS)

Bourianoff, George

1997-10-01

The US micro electronics industry anticipates growth of 20 to 30 percent per year for the next five years. The need for engineers and scientists poses a critical problem for the industry but conversely presents great opportunities for those in closely related fields such as physics where career opportunities may be more limited. There is no shortage of important and challenging problems on the Semiconductor Institute of America (SIA) roadmap which will require solution in the next 10 years and which require expertise in the physical sciences. However, significant cultural differences exist between the physics community and the engineering oriented semiconductor community which must be understood and addressed in order for a physicist to successfully contribute in this environment. This talk will identify some of those cultural differences and describe some of the critical physics related problems which must be solved. Critical roadblocks include lithographic patterning below 0.18m. and design of Very Large Scale Integrated (VLSI) circuits in the deep submicron regime. The former will require developing radiation sources and optical elements for the EUV or XRAY part of the spectrum. The latter will require incorporating electromagnetic field equations with traditional lumped element circuit design methods. The cultural barriers alluded to earlier involve the manner in which engineering detail is approached. A physicist's basic instinct is to strip off the detail in order to make a problem mathematically tractable. This enables understanding of the underlying physical relationships but does not yield the quantitative detail necessary in semiconductor production.

Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

PubMed

Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

2015-07-01

Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

Toxicity review of ethylene glycol monomethyl ether and its acetate ester.

PubMed

Johanson, G

2000-05-01

Ethylene glycol monomethyl ether (EGME) and its acetate ester (EGMEA) are highly flammable, colorless, moderately volatile liquids with very good solubility properties. They are used in paints, lacquers, stains, inks and surface coatings, silk-screen printing, photographic and photo lithographic processes, for example, in the semiconductor industry, textile and leather finishing, production of food-contact plastics, and as an antiicing additive in hydraulic fluids and jet fuel. EGME and EGMEA are efficiently absorbed by inhalation as well as via dermal penetration. Dermal absorption may contribute substantially to the total uptake following skin contact with liquids or vapours containing EGME or EGMEA. EGMEA is rapidly converted to EGME in the body and the two substances are equally toxic in animals. Therefore, the two substances should be considered as equally hazardous to man. Effects on peripheral blood, testes, and sperm have been reported at occupational exposure levels ranging between 0.4 and 10 ppm EGME in air, and with additional, possibly substantial, dermal exposure. Severe malformations and disturbed hematopoiesis have been linked with exposure to EGME and EGMEA at unknown, probably high, levels. Embryonic deaths in monkeys and impaired spermatogenesis in rabbits have been reported after daily oral doses of 12 and 25 mg per kg body weight, respectively. In several studies, increased frequency of spontaneous abortions, disturbed menstrual cycle, and subfertility have been demonstrated in women working in the semiconductor industry. The contribution of EGME in relation to other exposure factors in the semiconductor industry is unclear.

The Microcalorimeter for Industrial Applications

PubMed Central

Redfern, Del; Nicolosi, Joe; Höhne, Jens; Weiland, Rainer; Simmnacher, Birgit; Hollerich, Christian

2002-01-01

To achieve the dramatic increases in x-ray spectral resolution (<20 eV at 1.5k eV) desired by market segments such as the semiconductor industry, NIST developed a transition-edge sensor (TES) microcalorimeter. To bring this exciting, yet demanding, new technology to the industrial users, certain criteria must be addressed. Aspects of resolution, cooling and hold time, count rates as well as vibrations are considered. Data is presented to the present efforts to handle these issues as well as discussing development plans for the future. PMID:27446756

75 FR 16837 - In the Matter of Certain Integrated Circuits, Chipsets, and Products Containing Same Including...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-02

.... 1337, on behalf of Freescale Semiconductor, Inc. of Austin, Texas. A letter supplementing the complaint...,715,014; and 7,199,306. The complaint further alleges that an industry in the United States exists as...,715,014; and claims 1, 6, 11, and 13-16 of U.S. Patent No. 7,199,306, and whether an industry in the...

76 FR 66331 - Investigations Regarding Certifications of Eligibility To Apply for Worker Adjustment Assistance...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-26

... Subject Firm (petitioners) Location institution petition 80486 Lattice Semiconductor Bethlehem, PA.../11 80498 InterMetro Industries Fostoria, OH 10/07/11 10/05/11 (Company). 80499 Standard Insurance...

Modular synthesis of a dual metal-dual semiconductor nano-heterostructure

DOE PAGES

Amirav, Lilac; Oba, Fadekemi; Aloni, Shaul; ...

2015-04-29

Reported is the design and modular synthesis of a dual metal-dual semiconductor heterostructure with control over the dimensions and placement of its individual components. Analogous to molecular synthesis, colloidal synthesis is now evolving into a series of sequential synthetic procedures with separately optimized steps. Here we detail the challenges and parameters that must be considered when assembling such a multicomponent nanoparticle, and their solutions.

Addressing Counterfeit Parts in the DoD Supply Chain

DTIC Science & Technology

2014-03-01

components are genuine, given this industry’s relatively quick innovation cycles. Many active military systems were built using now-obsolete...reviews, and other activities that can delay acquisitions and increase acquisition costs. The QSLD program also enables the DSCC to use automated...case of semiconductors, many active military systems were built using now-obsolete semiconductors, the production of which was halted years, even

Materials for high-density electronic packaging and interconnection

NASA Technical Reports Server (NTRS)

1990-01-01

Electronic packaging and interconnections are the elements that today limit the ultimate performance of advanced electronic systems. Materials in use today and those becoming available are critically examined to ascertain what actions are needed for U.S. industry to compete favorably in the world market for advanced electronics. Materials and processes are discussed in terms of the final properties achievable and systems design compatibility. Weak points in the domestic industrial capability, including technical, industrial philosophy, and political, are identified. Recommendations are presented for actions that could help U.S. industry regain its former leadership position in advanced semiconductor systems production.

Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Performance Management and Optimization of Semiconductor Design Projects

NASA Astrophysics Data System (ADS)

Hinrichs, Neele; Olbrich, Markus; Barke, Erich

2010-06-01

The semiconductor industry is characterized by fast technological changes and small time-to-market windows. Improving productivity is the key factor to stand up to the competitors and thus successfully persist in the market. In this paper a Performance Management System for analyzing, optimizing and evaluating chip design projects is presented. A task graph representation is used to optimize the design process regarding time, cost and workload of resources. Key Performance Indicators are defined in the main areas cost, profit, resources, process and technical output to appraise the project.

Production of solar chemicals: gaining selectivity with hybrid molecule/semiconductor assemblies.

PubMed

Hennessey, Seán; Farràs, Pau

2018-05-29

Research on the production of solar fuels and chemicals has rocketed over the past decade, with a wide variety of systems proposed to harvest solar energy and drive chemical reactions. In this Feature Article we have focused on hybrid molecule/semiconductor assemblies in both powder and supported materials, summarising recent systems and highlighting the enormous possibilities offered by such assemblies to carry out highly demanding chemical reactions with industrial impact. Of relevance is the higher selectivity obtained in visible light-driven organic transformations when using molecular catalysts compared to photocatalytic materials.

Coherent diffractive imaging methods for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

2017-12-01

The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1973-01-01

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Plasma Processes for Semiconductor Fabrication

NASA Astrophysics Data System (ADS)

Hitchon, W. N. G.

1999-01-01

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

PubMed Central

Averyanov, Dmitry V.; Karateeva, Christina G.; Karateev, Igor A.; Tokmachev, Andrey M.; Vasiliev, Alexander L.; Zolotarev, Sergey I.; Likhachev, Igor A.; Storchak, Vyacheslav G.

2016-01-01

Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics. PMID:26957146

Recent advances in electron tomography: TEM and HAADF-STEM tomography for materials science and semiconductor applications.

PubMed

Kübel, Christian; Voigt, Andreas; Schoenmakers, Remco; Otten, Max; Su, David; Lee, Tan-Chen; Carlsson, Anna; Bradley, John

2005-10-01

Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimensional (3D) structural information in physical sciences. In this article, we evaluate the capabilities and limitations of transmission electron microscopy (TEM) and high-angle-annular-dark-field scanning transmission electron microscopy (HAADF-STEM) tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1-2 nm can be resolved in three dimensions by electron tomography. For partially crystalline materials with small single crystalline domains, bright-field TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.

Crystalline Microporous Organosilicates with Reversed Functionalities of Organic and Inorganic Components for Room-Temperature Gas Sensing.

PubMed

Fabbri, Barbara; Bonoldi, Lucia; Guidi, Vincenzo; Cruciani, Giuseppe; Casotti, Davide; Malagù, Cesare; Bellussi, Giuseppe; Millini, Roberto; Montanari, Luciano; Carati, Angela; Rizzo, Caterina; Montanari, Erica; Zanardi, Stefano

2017-07-26

A deepened investigation on an innovative organic-inorganic hybrid material, referred to as ECS-14 (where ECS = Eni carbon silicates), revealed the possibility to use them as gas sensors. Indeed, among ECS phases, the crystalline state and the hexagonal microplateletlike morphology characteristic of ECS-14 seemed favorable properties to obtain continuous and uniform films. ECS-14 phase was used as functional material in screen-printable compositions and was thus deposited by drop coating for morphological, structural, thermal, and electrical characterizations. Possible operation at room temperature was investigated as technological progress, offering intrinsic safety in sensors working in harsh or industrial environments and avoiding high power consumption of most common sensors based on metal oxide semiconductors. Electrical characterization of the sensors based on ECS-14 versus concentrations of gaseous analytes gave significant results at room temperature in the presence of humidity, thereby demonstrating fundamental properties for a good quality sensor (speed, reversibility, and selectivity) that make them competitive with respect to systems currently in use. Remarkably, we observed functionality reversal of the organic and inorganic components; that is, in contrast to other hybrids, for ECS-14 the functional site has been ascribed to the inorganic phase while the organic component provided structural stability to the material. The sensing mechanism for humidity was also investigated.

Graphene and carbon nanotubes: synthesis, characterization and applications for beyond silicon electronics

NASA Astrophysics Data System (ADS)

Gomez de Arco, Lewis Mortimer

Graphene and carbon nanotubes have outstanding electrical and thermal conductivity. These characteristics make them exciting materials with high potential to replace silicon and surpass its performance in the next generation of semiconductors devices, such devices ought to be considerably smaller and faster than the ones used in present technology. Despite of the excellent electrical and thermal conduction properties of graphene and carbon nanotubes, the advance of nanoelectronics based on them has been hampered due to fundamental limitations of the current synthesis and integration technologies of these carbon nanomaterials. Therefore, there is a strong need to do research at fundamental and applicative levels to help find the roadmap that these materials need to follow, in order to become a real alternative for silicon in future technologies. This dissertation present our approach to overcome some of the most critical problems that hinder the implementation of graphene and carbon nanotubes as important components in real-life macro and nanoelectronic devices. Towards this end, we systematically studied synthesis methods for scalable, high quality graphene and evaluated our large-scale synthesized graphene as transparent electrodes in functional energy conversion devices. In addition, we explored scalable methods to obtain carbon nanotube field-effect transistors with only semiconductor nanotube channels and studied the substrate influence on the structure and metal to semiconductor ratio of aligned nanotubes. Although we have successfully tackled some of the most important challenges of the above-mentioned one- and two-dimensional carbon nanostructures, more remains to be done to integrate them as functional components in electronic devices to reach the goal of transferring them from the laboratory to the manufacturing industry, and ultimately to the society. In chapter 1, a general introduction to carbon nanomaterials is presented, followed by a more focused discussion on the structure and properties of graphene and carbon nanotubes. Chapter 2, presents the development of a chemical vapor deposition method for scalable graphene synthesis and the evaluation of its electrical properties as the active channel in field effect transistor and as a transparent conductor. Chapter 3 presents further work on graphene synthesis on single crystal nickel and the influence of the substrate atomic arrangement on the synthesized graphene. Chapter 4 presents the implementation of the highly scalable graphene synthesized by CVD as the transparent electrode in flexible organic photovoltaic cells. Chapter 5 evaluates the influence of substrate/nanotube interactions during align nanotube growth on the Raman signature of the resulting aligned nanotubes, nanotube structure and metal to semiconductor ratio. Chapter 6 presents our findings on a scalable method that can be used at wafer scale to achieve metal to semiconductor conversion of carbon nanotubes by light irradiation and its application to achieve semiconducting CNTFETs. Finally, in chapter 7, future research directions in related areas of science and technology are proposed.

Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

PubMed

Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

2013-08-21

For at least the past ten years printed electronics has promised to revolutionize our daily life by making cost-effective electronic circuits and sensors available through mass production techniques, for their ubiquitous applications in wearable components, rollable and conformable devices, and point-of-care applications. While passive components, such as conductors, resistors and capacitors, had already been fabricated by printing techniques at industrial scale, printing processes have been struggling to meet the requirements for mass-produced electronics and optoelectronics applications despite their great potential. In the case of logic integrated circuits (ICs), which constitute the focus of this Progress Report, the main limitations have been represented by the need of suitable functional inks, mainly high-mobility printable semiconductors and low sintering temperature conducting inks, and evoluted printing tools capable of higher resolution, registration and uniformity than needed in the conventional graphic arts printing sector. Solution-processable polymeric semiconductors are the best candidates to fulfill the requirements for printed logic ICs on flexible substrates, due to their superior processability, ease of tuning of their rheology parameters, and mechanical properties. One of the strongest limitations has been mainly represented by the low charge carrier mobility (μ) achievable with polymeric, organic field-effect transistors (OFETs). However, recently unprecedented values of μ ∼ 10 cm(2) /Vs have been achieved with solution-processed polymer based OFETs, a value competing with mobilities reported in organic single-crystals and exceeding the performances enabled by amorphous silicon (a-Si). Interestingly these values were achieved thanks to the design and synthesis of donor-acceptor copolymers, showing limited degree of order when processed in thin films and therefore fostering further studies on the reason leading to such improved charge transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order to achieve the operation frequencies needed for applications, such as flexible radio-frequency identification (RFID) tags, near-field communication (NFC) devices, ambient electronics, and portable flexible displays. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

50 Years of ``Scaling'' Jack Kilby's Invention

NASA Astrophysics Data System (ADS)

Doering, Robert

2008-03-01

This year is the 50th anniversary of Jack Kilby's 1958 invention of the integrated circuit (IC), for which he won the 2000 Nobel Prize in Physics. Since that invention in a laboratory at Texas Instruments, IC components have been continuously miniaturized, which has resulted in exponential improvement trends in their performance, energy efficiency, and cost per function. These improvements have created a semiconductor industry that has grown to over 250B in annual sales. The process of reducing integrated-circuit component size and associated parameters in a coordinated fashion is traditionally called ``feature-size scaling.'' Kilby's original circuit had active (transistor) and passive (resistor, capacitor) components with dimensions of a few millimeters. Today, the minimum feature sizes on integrated circuits are less than 30 nanometers for patterned line widths and down to about one nanometer for film thicknesses. Thus, we have achieved about five orders of magnitude in linear-dimension scaling over the past fifty years, which has resulted in about ten orders of magnitude increase in the density of IC components, a representation of ``Moore's Law.'' As IC features are approaching atomic dimensions, increasing emphasis is now being given to the parallel effort of further diversifying the types of components in integrated circuits. This is called ``functional scaling'' and ``more then Moore.'' Of course, the enablers for both types of scaling have been developed at many laboratories around the world. This talk will review a few of the highlights in scaling and its applications from R&D projects at Texas Instruments.

Occupational injury and illness in the semiconductor manufacturing industry.

PubMed

McCurdy, S A; Schenker, M B; Lassiter, D V

1989-01-01

Two thousand nine hundred and ninety-four reports of OSHA-reportable occupational injury or illness cases in 1984 from member companies of a national trade association of semiconductor manufacturing firms were analyzed. The 37 participating manufacturing facilities represented 16 companies employing over 95,000 persons, or approximately one-third of the U.S. work force for this industry in 1984. The annual incidence rate for all reportable injuries and illnesses was 2.7 per 100 full-time employees (FTE) for men and 3.7 per 100 FTE for women. Strains, sprains, or dislocations were the most frequently reported incidents (N = 956 [31.9%]), followed by cuts, lacerations, punctures, scratches, and abrasions (N = 445 [14.9%]), and chemical burns (N = 401 [13.4%]). Increased work-loss days per case were associated with manufacturing sites that did not have an employee health clinic on the premises, with custodial occupations, and with female gender.

Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

NASA Astrophysics Data System (ADS)

Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

2017-09-01

The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

Piezoelectric Motors and Transformers

NASA Astrophysics Data System (ADS)

Uchino, K.

Piezoelectric ceramics forms a new field between electronic and structural ceramics [1-4]. Application fields are classified into three categories: positioners, motors, and vibration suppressors. From the market research result for 80 Japanese component industries in 1992, tiny motors in the range of 5-8 mm are required in large numbers for office and portable equipment; the conventional electromagnetic (EM) motors are rather difficult to produce in this size with sufficient energy efficiency, while Silicon MEMS actuators are too small to be used in practice. Piezoelectric ultrasonic motors whose efficiency is insensitive to size are superior in the millimeter motor area. The manufacturing precision of optical instruments such as lasers and cameras, and the positioning accuracy for fabricating semiconductor chips are of the order of 0.1μm which is much smaller than the backlash of the EM motors. Vibration suppression in space structures and military vehicles also require compact but mighty piezoelectric actuators.

Transport Equations for CAD Modeling of Al(x)Ga(1-x)N/GaN HEMTs

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2003-01-01

BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.

Broadly tunable thin-film intereference coatings: active thin films for telecom applications

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Ma, Eugene Y.; Lourie, Mark T.; Sharfin, Wayne F.; Wagner, Matthias

2003-06-01

Thin film interference coatings (TFIC) are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable TFIC components based on the thermo-optic properties of semiconductor thin films with large thermo-optic coefficients 3.6X10[-4]/K. The technology is based on amorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable TFIC can be designed as sophisticated multi-cavity, multi-layer optical designs. Applications include flat-top passband filters for add-drop multiplexing, tunable dispersion compensators, tunable gain equalizers and variable optical attenuators. Extremely compact tunable devices may be integrated into modules such as optical channel monitors, tunable lasers, gain-equalized amplifiers, and tunable detectors.

Modular design of the LED vehicle projector headlamp system.

PubMed

Hsieh, Chi-Chang; Li, Yan-Huei; Hung, Chih-Ching

2013-07-20

A well designed headlamp for a vehicle lighting system is very important as it provides drivers with safe and comfortable driving conditions at night or in dark places. With the advances of the semiconductor technology, the LED has become the fourth generation lighting source in the auto industry. In this study, we will propose a LED vehicle projector headlamp system. This headlamp system contains several LED headlamp modules, and every module of it includes four components: focused LEDs, asymmetric metal-based plates, freeform surfaces, and condenser lenses. By optimizing the number of LED headlamp modules, the proposed LED vehicle projector headlamp system has only five LED headlamp modules. It not only provides the low-beam cutoff without a shield, but also meets the requirements of the ECE R112 regulation. Finally, a prototype of the LED vehicle projector headlamp system was assembled and fabricated to create the correct light pattern.

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

NASA Astrophysics Data System (ADS)

Haris, Norshakila; Kyabaggu, Peter B. K.; Alim, Mohammad A.; Rezazadeh, Ali A.

2017-05-01

In this paper, we demonstrate for the first time the implementation of three-dimensional multilayer technology on GaAs-based pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint’s Own Model—Level 3, developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

An IDEA of What's in the Air

NASA Technical Reports Server (NTRS)

2002-01-01

The Automatic Particle Fallout Monitor (APFM) is an automated instrument that assesses real-time particle contamination levels in a facility by directly imaging, sizing, and counting contamination particles. It allows personnel to respond to particle contamination before it becomes a major problem. For NASA, the APFM improves the ability to mitigate, avoid, and explain mission-compromising incidents of contamination occurring during payload processing, launch vehicle ground processing, and potentially, during flight operations. Commercial applications are in semiconductor processing and electronics fabrication, as well as aerospace, aeronautical, and medical industries. The product could also be used to measure the air quality of hotels, apartment complexes, and corporate buildings. IDEA sold and delivered its first four units to the United Space Alliance for the Space Shuttle Program at Kennedy. NASA used the APFM in the Kennedy Space Station Processing Facility to monitor contamination levels during the assembly of International Space Station components.

Andreev reflection enhancement in semiconductor-superconductor structures

NASA Astrophysics Data System (ADS)

Bouscher, Shlomi; Winik, Roni; Hayat, Alex

2018-02-01

We develop a theoretical approach for modeling a wide range of semiconductor-superconductor structures with arbitrary potential barriers and a spatially dependent superconducting order parameter. We demonstrate asymmetry in the conductance spectrum as a result of a Schottky barrier shape. We further show that the Andreev reflection process can be significantly enhanced through resonant tunneling with appropriate barrier configuration, which can incorporate the Schottky barrier as a contributing component of the device. Moreover, we show that resonant tunneling can be achieved in superlattice structures as well. These theoretically demonstrated effects along with our modeling approach enable much more efficient Cooper pair injection into semiconductor-superconductor structures, including superconducting optoelectronic devices.

The Internationalization of Industry. Annex B. Offshore Production in the International Semiconductor Industry,

DTIC Science & Technology

1981-11-01

essence of these arrangements is specialization based in international differentials in * 379 the costs of labor services. The availability of low...of electronic equipment vary with the complexity and cost of the equipment, a differentiated market for chips of varying densities, for use in...level of chip density, while more complex products will be most economically produced with higher levels of chip density. Thuse a differentiated

Defense Industrial Base Assessment: U.S. Imaging and Sensors Industry

DTIC Science & Technology

2006-10-01

uncooled devices, but provide much higher resolution. The semiconductor material used in the detector is typically mercury cadmium telluride (HgCdTe...The material principally used in the arrays was mercury cadmium telluride (HgCdTe). Generation 2 detectors significantly improved the signal-to...Silicide (PtSi), Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AlGaAs), Mercury Cadmium Telluride (HgCdTe), Indium Gallium Arsenide (InGaAs

Engineering English and the High-Tech Industry: A Case Study of an English Needs Analysis of Process Integration Engineers at a Semiconductor Manufacturing Company in Taiwan

ERIC Educational Resources Information Center

Spence, Paul; Liu, Gi-Zen

2013-01-01

The global high-tech industry is characterized by extreme competitiveness, innovation, and widespread use of English. Consequently, Taiwanese high-tech companies require engineers that are talented in both their engineering and English abilities. In response to the lack of knowledge regarding the English skills needed by engineers in Taiwan's…

CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.

Source identification and apportionment of halogenated compounds observed at a remote site in East Asia.

PubMed

Li, Shanlan; Kim, Jooil; Park, Sunyoung; Kim, Seung-Kyu; Park, Mi-Kyung; Mühle, Jens; Lee, Gangwoong; Lee, Meehye; Jo, Chun Ok; Kim, Kyung-Ryul

2014-01-01

The sources of halogenated compounds in East Asia associated with stratospheric ozone depletion and climate change are relatively poorly understood. High-precision in situ measurements of 18 halogenated compounds and carbonyl sulfide (COS) made at Gosan, Jeju Island, Korea, from November 2007 to December 2011 were analyzed by a positive matrix factorization (PMF). Seven major industrial sources were identified from the enhanced concentrations of halogenated compounds observed at Gosan and corresponding concentration-based source contributions were also suggested: primary aluminum production explaining 37% of total concentration enhancements, solvent usage of which source apportionment is 25%, fugitive emissions from HCFC/HFC production with 11%, refrigerant replacements (9%), semiconductor/electronics industry (9%), foam blowing agents (6%), and fumigation (3%). Statistical trajectory analysis was applied to specify the potential emission regions for seven sources using back trajectories. Primary aluminum production, solvent usage and fugitive emission sources were mainly contributed by China. Semiconductor/electronics sources were dominantly located in Korea. Refrigerant replacement, fumigation and foam blowing agent sources were spread throughout East Asian countries. The specified potential source regions are consistent with country-based consumptions and emission patterns, verifying the PMF analysis results. The industry-based emission sources of halogenated compounds identified in this study help improve our understanding of the East Asian countries' industrial contributions to halogenated compound emissions.

Lithography for enabling advances in integrated circuits and devices.

PubMed

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Implantable biomedical devices on bioresorbable substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A; Kim, Dae-Hyeong; Omenetto, Fiorenzo

Provided herein are implantable biomedical devices, methods of administering implantable biomedical devices, methods of making implantable biomedical devices, and methods of using implantable biomedical devices to actuate a target tissue or sense a parameter associated with the target tissue in a biological environment. Each implantable biomedical device comprises a bioresorbable substrate, an electronic device having a plurality of inorganic semiconductor components supported by the bioresorbable substrate, and a barrier layer encapsulating at least a portion of the inorganic semiconductor components. Upon contact with a biological environment the bioresorbable substrate is at least partially resorbed, thereby establishing conformal contact between themore » implantable biomedical device and the target tissue in the biological environment.« less

The Asian Semiconductor Industry and It’s Potential Impacts to U.S. National Security. Electronics Industry Study

DTIC Science & Technology

2007-01-01

late 1980s, Korean firms began to compete globally on memory chips, with Samsung earning a sales profit in 1987 (Pecht, 1997, p. 10; Mathews, 2000, p...competitive in the 1990s (Lee, 1997, p. 41). Singapore, Malaysia and China have since developed significant chip industries (Beane, 1997, p. 9; Pecht...sales in parentheses): #2 Samsung ($19.7B), #5 Toshiba ($9.8B), #6 TSMC ($9.7B), #7 Hynix ($8.0B) and #8 Renesas ($7.9B) (McGrath, 2007, p. 3

Space Station - The base for tomorrow's electronic industry

NASA Technical Reports Server (NTRS)

Naumann, Robert J.

1985-01-01

The potential value of space material processing on the Space Station for the electronics industry is examined. The primary advantages of the space environment for producing high-purity semiconductors and electrooptical materials are identified as the virtual absence of gravity (suppressing buoyancy-driven convection in melts and density segregation of alloys) and the availabilty of high vacuum (with high pumping speed and heat rejection). The recent history of material development and processing technology in the electronics industry is reviewed, and the principal features of early space experiments are outlined.

Electron beam irradiation processing for industrial and medical applications

NASA Astrophysics Data System (ADS)

Ozer, Zehra Nur

2017-09-01

In recent years, electron beam processing has been widely used for medical and industrial applications. Electron beam accelerators are reliable and durable equipments that can produce ionizing radiation when it is needed for a particular commercial use. On the industrial scale, accelerators are used to generate electrons in between 0.1-100 MeV energy range. These accelerators are used mainly in plastics, automotive, wire and electric cables, semiconductors, health care, aerospace and environmental industries, as well as numerous researches. This study presents the current applications of electron beam processing in medicine and industry. Also planned study of a design for such a system in the energy range of 200-300 keV is introduced.

Job Prospects for E/E Engineers.

ERIC Educational Resources Information Center

Basta, Nicholas

1986-01-01

Reviews job prospects for electrical/electronic E/E engineers, indicating that 1985 was not a banner year due to problems in the semiconductor manufacturing industries and in telecommunications. Also indicates that an upturn is expected for 1986 E/E graduates. (JN)

Analytical approaches to optimizing system "Semiconductor converter-electric drive complex"

NASA Astrophysics Data System (ADS)

Kormilicin, N. V.; Zhuravlev, A. M.; Khayatov, E. S.

2018-03-01

In the electric drives of the machine-building industry, the problem of optimizing the drive in terms of mass-size indicators is acute. The article offers analytical methods that ensure the minimization of the mass of a multiphase semiconductor converter. In multiphase electric drives, the form of the phase current at which the best possible use of the "semiconductor converter-electric drive complex" for active materials is different from the sinusoidal form. It is shown that under certain restrictions on the phase current form, it is possible to obtain an analytical solution. In particular, if one assumes the shape of the phase current to be rectangular, the optimal shape of the control actions will depend on the width of the interpolar gap. In the general case, the proposed algorithm can be used to solve the problem under consideration by numerical methods.

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

PubMed

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2015-07-08

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

Possibilities of new materials surface sensibility express determination based on ZnSe-CdS system by pH isoelectric state measurements of the surface state

NASA Astrophysics Data System (ADS)

Kirovskaya, I. A.; Mironova, E. V.; Ushakov, O. V.; Nor, P. E.; Yureva, A. V.; Matyash, Yu I.

2018-01-01

A method for determining the hydrogen index of the surfaces isoelectric state (pHiso) at various gases pressures -possible components of the surrounding and technological media has been developed. With its use, changes in pH of binary and more complex semiconductors-components of the new system-ZnSe-CdS under the influence of nitrogen dioxide-have been found. The limiting sensitivity of surfaces - minimum PNO2, causing a change in pH has been estimated. The most active components of ZnSe-CdS system, recommended as materials for measuring cells of NO2, have been revealed. The relationship between the changing patterns with the composition of surface (acid-base) and bulk (in particular, theoretical calculated crystal density) properties has been established, allowing to find the most effective materials for sensor technology and for semiconductor analysis.

Process Control in Production-Worthy Plasma Doping Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Winder, Edmund J.; Fang Ziwei; Arevalo, Edwin

2006-11-13

As the semiconductor industry continues to scale devices of smaller dimensions and improved performance, many ion implantation processes require lower energy and higher doses. Achieving these high doses (in some cases {approx}1x1016 ions/cm2) at low energies (<3 keV) while maintaining throughput is increasingly challenging for traditional beamline implant tools because of space-charge effects that limit achievable beam density at low energies. Plasma doping is recognized as a technology which can overcome this problem. In this paper, we highlight the technology available to achieve process control for all implant parameters associated with modem semiconductor manufacturing.

78 FR 55759 - Investigations Regarding Eligibility To Apply for Worker Adjustment Assistance

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-11

... Pico Rivera, CA.... 08/21/13 08/20/13 (Company). 83012 Bush Industries, Inc. Jamestown, NY...... 08/21........... 08/22/13 08/21/13 (Workers). 83016 Fairchild Semiconductor West Jordan, UT.... 08/22/13 08/15/13...

Korean Affairs Report.

DTIC Science & Technology

1985-05-29

been caught by the fascist jackals ’ atrocious tentacle are not safe. In particular» it is common practice in South Korea that those who live justly are...a golden market with an extraordinary growth rate. The bold development of our country’s semiconductor industry is predicated on the realization...million sets during the coming 12 months. According to industry sources on the 27th, the world VTR market is a golden market, with yearly sales of

Ultimate linewidth reduction of a semiconductor laser frequency-stabilized to a Fabry-Pérot interferometer.

PubMed

Bahoura, Messaoud; Clairon, André

2003-11-01

We report a theoretical dynamical analysis on effect of semiconductor laser phase noise on the achievable linewidth when locked to a Fabry-Pérot cavity fringe using a modulation-demodulation frequency stabilization technique such as the commonly used Pound-Drever-Hall frequency locking scheme. We show that, in the optical domain, the modulation-demodulation operation produces, in the presence of semiconductor laser phase noise, two kinds of excess noise, which could be much above the shot noise limit, namely, conversion noise (PM-to-AM) and intermodulation noise. We show that, in typical stabilization conditions, the ultimate semiconductor laser linewidth reduction can be severely limited by the intermodulation excess noise. The modulation-demodulation operation produces the undesirable nonlinear intermodulation effect through which the phase noise spectral components of the semiconductor laser, in the vicinity of even multiples of the modulation frequency, are downconverted into the bandpass of the frequency control loop. This adds a spurious signal, at the modulation frequency, to the error signal and limits the performance of the locked semiconductor laser. This effect, reported initially in the microwave domain using the quasistatic approximation, can be considerably reduced by a convenient choice of the modulation frequency.

Voluntary GHG reduction of industrial sectors in Taiwan.

PubMed

Chen, Liang-Tung; Hu, Allen H

2012-08-01

The present paper describes the voluntary greenhouse gas (GHG) reduction agreements of six different industrial sectors in Taiwan, as well as the fluorinated gases (F-gas) reduction agreement of the semiconductor and Liquid Crystal Display (LCD) industries. The operating mechanisms, GHG reduction methods, capital investment, and investment effectiveness are also discussed. A total of 182 plants participated in the voluntary energy saving and GHG reduction in six industrial sectors (iron and steel, petrochemical, cement, paper, synthetic fiber, and textile printing and dyeing), with 5.35 Mt reduction from 2004 to 2008, or 33% higher than the target goal (4.02 Mt). The reduction accounts for 1.6% annual emission or 7.8% during the 5-yr span. The petrochemical industry accounts for 49% of the reduction, followed by the cement sector (21%) and the iron and steel industry (13%). The total investment amounted to approximately USD 716 million, in which, the majority of the investment went to the modification of the manufacturing process (89%). The benefit was valued at around USD 472 million with an average payback period of 1.5 yr. Moreover, related energy saving was achieved through different approaches, e.g., via electricity (iron and steel), steam and oil consumption (petrochemical) and coal usage (cement). The cost for unit CO(2) reduction varies per industry, with the steel and iron industrial sector having the highest cost (USD 346 t(-1) CO(2)) compared with the average cost of the six industrial sectors (USD 134 t(-1) CO(2)). For the semiconductor and Thin-Film Transistor LCD industries, F-gas emissions were reduced from approximately 4.1 to about 1.7 Mt CO(2)-eq, and from 2.2 to about 1.1 Mt CO(2)-eq, respectively. Incentive mechanisms for participation in GHG reduction are also further discussed. Copyright © 2012 Elsevier Ltd. All rights reserved.

Quantitative Exposure Assessment of Various Chemical Substances in a Wafer Fabrication Industry Facility

PubMed Central

Jang, Jae-Kil; Shin, Jung-Ah

2011-01-01

Objectives This study was designed to evaluate exposure levels of various chemicals used in wafer fabrication product lines in the semiconductor industry where work-related leukemia has occurred. Methods The research focused on 9 representative wafer fabrication bays among a total of 25 bays in a semiconductor product line. We monitored the chemical substances categorized as human carcinogens with respect to leukemia as well as harmful chemicals used in the bays and substances with hematologic and reproductive toxicities to evaluate the overall health effect for semiconductor industry workers. With respect to monitoring, active and passive sampling techniques were introduced. Eight-hour long-term and 15-minute short-term sampling was conducted for the area as well as on personal samples. Results The results of the measurements for each substance showed that benzene, toluene, xylene, n-butyl acetate, 2-methoxyethanol, 2-heptanone, ethylene glycol, sulfuric acid, and phosphoric acid were non-detectable (ND) in all samples. Arsine was either "ND" or it existed only in trace form in the bay air. The maximum exposure concentration of fluorides was approximately 0.17% of the Korea occupational exposure limits, with hydrofluoric acid at about 0.2%, hydrochloric acid 0.06%, nitric acid 0.05%, isopropyl alcohol 0.4%, and phosphine at about 2%. The maximum exposure concentration of propylene glycol monomethyl ether acetate (PGMEA) was 0.0870 ppm, representing only 0.1% or less than the American Industrial Hygiene Association recommended standard (100 ppm). Conclusion Benzene, a known human carcinogen for leukemia, and arsine, a hematologic toxin, were not detected in wafer fabrication sites in this study. Among reproductive toxic substances, n-butyl acetate was not detected, but fluorides and PGMEA existed in small amounts in the air. This investigation was focused on the air-borne chemical concentrations only in regular working conditions. Unconditional exposures during spills and/or maintenance tasks and by-product chemicals were not included. Supplementary studies might be required. PMID:22953186

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

NASA Astrophysics Data System (ADS)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner on Icelandic National Day In connection with the conference, a summer school for 40 research students was organized by the Nordic LENS network. The summer school took place in Reykjavik on 11-14 June. For more information on the school please visit the website. The next Nordic Semiconductor meeting, NSM 2011, is scheduled to take place in Aarhus, Denmark, 19-22 June 2011. A full participant list is available in the PDF of this article.

A system approach for reducing the environmental impact of manufacturing and sustainability improvement of nano-scale manufacturing

NASA Astrophysics Data System (ADS)

Yuan, Yingchun

This dissertation develops an effective and economical system approach to reduce the environmental impact of manufacturing. The system approach is developed by using a process-based holistic method for upstream analysis and source reduction of the environmental impact of manufacturing. The system approach developed consists of three components of a manufacturing system: technology, energy and material, and is useful for sustainable manufacturing as it establishes a clear link between manufacturing system components and its overall sustainability performance, and provides a framework for environmental impact reductions. In this dissertation, the system approach developed is applied for environmental impact reduction of a semiconductor nano-scale manufacturing system, with three case scenarios analyzed in depth on manufacturing process improvement, clean energy supply, and toxic chemical material selection. The analysis on manufacturing process improvement is conducted on Atomic Layer Deposition of Al2O3 dielectric gate on semiconductor microelectronics devices. Sustainability performance and scale-up impact of the ALD technology in terms of environmental emissions, energy consumption, nano-waste generation and manufacturing productivity are systematically investigated and the ways to improve the sustainability of the ALD technology are successfully developed. The clean energy supply is studied using solar photovoltaic, wind, and fuel cells systems for electricity generation. Environmental savings from each clean energy supply over grid power are quantitatively analyzed, and costs for greenhouse gas reductions on each clean energy supply are comparatively studied. For toxic chemical material selection, an innovative schematic method is developed as a visual decision tool for characterizing and benchmarking the human health impact of toxic chemicals, with a case study conducted on six chemicals commonly used as solvents in semiconductor manufacturing. Reliability of the schematic method is validated by comparing its benchmark results on 104 chemicals with that from the conventional Human Toxicity Potential (HTP) method. This dissertation concludes with discussions on environmental impact assessment of nanotechnologies and sustainability management of nano-particles. As nano-manufacturing is emerging for wide industrial applications, improvement and expansion of the system approach would be valuable for use in the environmental management of nano-manufacturing and in the risk control of nano-particles in the interests of public health and the environment.

Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors.

PubMed

Zhou, Shujun; Tang, Qingxin; Tian, Hongkun; Zhao, Xiaoli; Tong, Yanhong; Barlow, Stephen; Marder, Seth R; Liu, Yichun

2018-05-09

The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

PubMed Central

Fine, George F.; Cavanagh, Leon M.; Afonja, Ayo; Binions, Russell

2010-01-01

Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and quick response times. They have been used extensively to measure and monitor trace amounts of environmentally important gases such as carbon monoxide and nitrogen dioxide. In this review the nature of the gas response and how it is fundamentally linked to surface structure is explored. Synthetic routes to metal oxide semiconductor gas sensors are also discussed and related to their affect on surface structure. An overview of important contributions and recent advances are discussed for the use of metal oxide semiconductor sensors for the detection of a variety of gases—CO, NOx, NH3 and the particularly challenging case of CO2. Finally a description of recent advances in work completed at University College London is presented including the use of selective zeolites layers, new perovskite type materials and an innovative chemical vapour deposition approach to film deposition. PMID:22219672

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

PubMed Central

Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

2013-01-01

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739

Measurement of toxic volatile organic compounds in indoor air of semiconductor foundries using multisorbent adsorption/thermal desorption coupled with gas chromatography-mass spectrometry.

PubMed

Wu, Chien-Hou; Lin, Ming-Nan; Feng, Chien-Tai; Yang, Kuang-Ling; Lo, Yu-Shiu; Lo, Jiunn-Guang

2003-05-09

A method for the qualitative and quantitative analysis of volatile organic compounds (VOCs) in the air of class-100 clean rooms at semiconductor fabrication facilities was developed. Air samples from two semiconductor factories were collected each hour on multisorbent tubes (including Carbopack B, Carbopack C, and Carbosieve SIII) with a 24-h automatic active sampling system and analyzed using adsorption/thermal desorption coupled with gas chromatography-mass spectrometry. Experimental parameters, including thermal desorption temperature, desorption time, and cryofocusing temperature, were optimized. The average recoveries and the method detection limits for the target compounds were in the range 94-101% and 0.31-0.89 ppb, respectively, under the conditions of a 1 L sampling volume and 80% relative humidity. VOCs such as acetone, isopropyl alcohol, 2-heptanone, and toluene, which are commonly used in the semiconductor and electronics industries, were detected and accurately quantified with the established method. Temporal variations of the analyte concentrations observed were attributed to the improper use of organic solvents during operation.

A Study of 4-level DC-DC Boost Inverter with Passive Component Reduction Consideration

NASA Astrophysics Data System (ADS)

Kasiran, A. N.; Ponniran, A.; Harimon, M. A.; Hamzah, H. H.

2018-04-01

This study is to analyze design principles of boost inductor and capacitor used in the 4-level DC-DC boost converter to realize size reduction of passive component referring to their attributes. The important feature of this circuit is that most of the boost-up energy is transferred from the capacitor-clamped to the output side which the small inductance can be used at the input side. The inductance of the boost inductor is designed by referring the inductor current ripple. On the other hand, the capacitance of the capacitor-clamped is designed by considering voltage stress on semiconductor devices and also the used switching frequency. Besides that, according to the design specifications, the required inductance in 4-level DC-DC boost converter is decreased compared to a conventional conventional DC-DC boost converter. Meanwhile, voltage stress on semiconductor device is depending on the maximum voltage ripple of the capacitor-clamped. A 50 W 4-level DC-DC boost converter prototype has been constructed. The results show that the inductor current ripple was 1.15 A when the inductors, 1 mH and 0.11 mH were used in the conventional and 4-level DC-DC boost converters, respectively. Thus, based on the experimental results, it shows that the reduction of passive components by referring to their attributes in 4-level DC-DC boost converter is achieved. Moreover, the decreasing of voltage stress on the semiconductor devices is an advantage for the selection of low ON-resistance of the devices which will contribute to the reduction of the semiconductor conduction loss. The integration result of boost converter and H-bridge inverter is also shown.

Dynamism in a Semiconductor Industrial Machine Allocation Problem using a Hybrid of the Bio-inspired and Musical-Harmony Approach

NASA Astrophysics Data System (ADS)

Kalsom Yusof, Umi; Nor Akmal Khalid, Mohd

2015-05-01

Semiconductor industries need to constantly adjust to the rapid pace of change in the market. Most manufactured products usually have a very short life cycle. These scenarios imply the need to improve the efficiency of capacity planning, an important aspect of the machine allocation plan known for its complexity. Various studies have been performed to balance productivity and flexibility in the flexible manufacturing system (FMS). Many approaches have been developed by the researchers to determine the suitable balance between exploration (global improvement) and exploitation (local improvement). However, not much work has been focused on the domain of machine allocation problem that considers the effects of machine breakdowns. This paper develops a model to minimize the effect of machine breakdowns, thus increasing the productivity. The objectives are to minimize system unbalance and makespan as well as increase throughput while satisfying the technological constraints such as machine time availability. To examine the effectiveness of the proposed model, results for throughput, system unbalance and makespan on real industrial datasets were performed with applications of intelligence techniques, that is, a hybrid of genetic algorithm and harmony search. The result aims to obtain a feasible solution to the domain problem.

Maintaining Moore's law: enabling cost-friendly dimensional scaling

NASA Astrophysics Data System (ADS)

Mallik, Arindam; Ryckaert, Julien; Mercha, Abdelkarim; Verkest, Diederik; Ronse, Kurt; Thean, Aaron

2015-03-01

Moore's Law (Moore's Observation) has been driving the progress in semiconductor technology for the past 50 years. The semiconductor industry is at a juncture where significant increase in manufacturing cost is foreseen to sustain the past trend of dimensional scaling. At N10 and N7 technology nodes, the industry is struggling to find a cost-friendly solution. At a device level, technologists have come up with novel devices (finFET, Gate-All-Around), material innovations (SiGe, Ge) to boost performance and reduce power consumption. On the other hand, from the patterning side, the relative slow ramp-up of alternative lithography technologies like EUVL and DSA pushes the industry to adopt a severely multi-patterning-based solution. Both of these technological transformations have a big impact on die yield and eventually die cost. This paper is aimed to analyze the impact on manufacturing cost to keep the Moore's law alive. We have proposed and analyzed various patterning schemes that can enable cost-friendly scaling. We evaluated the impact of EUVL introduction on tackling the high cost of manufacturing. The primary objective of this paper is to maintain Moore's scaling from a patterning perspective and analyzing EUV lithography introduction at a die level.

The Preemptive Stocker Dispatching Rule of Automatic Material Handling System in 300 mm Semiconductor Manufacturing Factories

NASA Astrophysics Data System (ADS)

Wang, C. N.; Lin, H. S.; Hsu, H. P.; Wang, Yen-Hui; Chang, Y. P.

2016-04-01

The integrated circuit (IC) manufacturing industry is one of the biggest output industries in this century. The 300mm wafer fabs is the major fab size of this industry. The automatic material handling system (AMHS) has become one of the most concerned issues among semiconductor manufacturers. The major lot delivery of 300mm fabs is used overhead hoist transport (OHT). The traffic jams are happened frequently due to the wide variety of products and big amount of OHTs moving in the fabs. The purpose of this study is to enhance the delivery performance of automatic material handling and reduce the delay and waiting time of product transportation for both hot lots and normal lots. Therefore, this study proposes an effective OHT dispatching rule: preemptive stocker dispatching (PSD). Simulation experiments are conducted and one of the best differentiated preemptive rule, differentiated preemptive dispatching (DPD), is used for comparison. Compared with DPD, The results indicated that PSD rule can reduce average variable delivery time of normal lots by 13.15%, decreasing average variable delivery time of hot lots by 17.67%. Thus, the PSD rule can effectively reduce the delivery time and enhance productivity in 300 mm wafer fabs.

Semiconductor devices for entangled photon pair generation: a review

NASA Astrophysics Data System (ADS)

Orieux, Adeline; Versteegh, Marijn A. M.; Jöns, Klaus D.; Ducci, Sara

2017-07-01

Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.

In-situ thermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiation.

PubMed

Amor, S; André, N; Kilchytska, V; Tounsi, F; Mezghani, B; Gérard, P; Ali, Z; Udrea, F; Flandre, D; Francis, L A

2017-05-05

In this paper, we investigate the recovery of some semiconductor-based components, such as N/P-type field-effect transistors (FETs) and a complementary metal-oxide-semiconductor (CMOS) inverter, after being exposed to a high total dose of gamma ray radiation. The employed method consists mainly of a rapid, low power and in situ annealing mitigation technique by silicon-on-insulator micro-hotplates. Due to the ionizing effect of the gamma irradiation, the threshold voltages showed an average shift of -580 mV for N-channel transistors, and -360 mV for P-MOSFETs. A 4 min double-cycle annealing of components with a heater temperature up to 465 °C, corresponding to a maximum power of 38 mW, ensured partial recovery but was not sufficient for full recovery. The degradation was completely recovered after the use of a built-in high temperature annealing process, up to 975 °C for 8 min corresponding to a maximum power of 112 mW, which restored the normal operating characteristics for all devices after their irradiation.

Nanophase diagram of binary eutectic Au-Ge nanoalloys for vapor-liquid-solid semiconductor nanowires growth

NASA Astrophysics Data System (ADS)

Lu, Haiming; Meng, Xiangkang

2015-06-01

Although the vapor-liquid-solid growth of semiconductor nanowire is a non-equilibrium process, the equilibrium phase diagram of binary alloy provides important guidance on the growth conditions, such as the temperature and the equilibrium composition of the alloy. Given the small dimensions of the alloy seeds and the nanowires, the known phase diagram of bulk binary alloy cannot be expected to accurately predict the behavior of the nanowire growth. Here, we developed a unified model to describe the size- and dimensionality-dependent equilibrium phase diagram of Au-Ge binary eutectic nanoalloys based on the size-dependent cohesive energy model. It is found that the liquidus curves reduce and shift leftward with decreasing size and dimensionality. Moreover, the effects of size and dimensionality on the eutectic composition are small and negligible when both components in binary eutectic alloys have the same dimensionality. However, when two components have different dimensionality (e.g. Au nanoparticle-Ge nanowire usually used in the semiconductor nanowires growth), the eutectic composition reduces with decreasing size.

Bi-continuous Multi-component Nanocrystal Superlattices for Solar Energy Conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kagan, Cherie; Murray, Christopher; Kikkawa, James

2017-06-14

Our SISGR program studied an emerging class of nanomaterials wherein different combinations of semiconductor or semiconductor and plasmonic nanocrystals (NCs) are self-assembled into three-dimensional multi-component superlattices. The NC assemblies were designed to form bicontinuous semiconductor NC sublattices with type-II energy offsets to drive charge separation onto electron and hole transporting sublattices for collection and introduce plasmonic NCs to increase solar absorption and charge separation. Our group is expert in synthesizing and assembling an extraordinary variety of artificial systems by tailoring the NC building blocks and the superlattice unit cell geometry. Under this DOE BES Materials Chemistry program, we introduced chemicalmore » methods to control inter-particle distance and to dope NC assemblies, which enabled our demonstration of strong electronic communication between NCs and the use of NC thin films as electronic materials. We synthesized, assembled and structurally, spectroscopically, and electrically probed NC superlattices to understand and manipulate the flow of energy and charge toward discovering the design rules and optimizing these complex architectures to create materials that efficiently convert solar radiation into electricity.« less

In-situ thermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiation

NASA Astrophysics Data System (ADS)

Amor, S.; André, N.; Kilchytska, V.; Tounsi, F.; Mezghani, B.; Gérard, P.; Ali, Z.; Udrea, F.; Flandre, D.; Francis, L. A.

2017-05-01

In this paper, we investigate the recovery of some semiconductor-based components, such as N/P-type field-effect transistors (FETs) and a complementary metal-oxide-semiconductor (CMOS) inverter, after being exposed to a high total dose of gamma ray radiation. The employed method consists mainly of a rapid, low power and in situ annealing mitigation technique by silicon-on-insulator micro-hotplates. Due to the ionizing effect of the gamma irradiation, the threshold voltages showed an average shift of -580 mV for N-channel transistors, and -360 mV for P-MOSFETs. A 4 min double-cycle annealing of components with a heater temperature up to 465 °C, corresponding to a maximum power of 38 mW, ensured partial recovery but was not sufficient for full recovery. The degradation was completely recovered after the use of a built-in high temperature annealing process, up to 975 °C for 8 min corresponding to a maximum power of 112 mW, which restored the normal operating characteristics for all devices after their irradiation.

Analysis of the Finite Precision s-Step Biconjugate Gradient Method

DTIC Science & Technology

2014-03-13

Center for Future Architecture Research, a member of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and ASPIRE Lab...industrial sponsors and affiliates Intel, Google, Nokia, NVIDIA , Oracle, and Samsung. Any opinions, findings, conclusions, or recommendations in this

IRIS Toxicological Review of Thallium and Compounds (External Review Draft)

EPA Science Inventory

Thallium compounds are used in the semiconductor industry, the manufacture of optic lenses and low-melting glass, low-temperature thermometers, alloys, electronic devices, mercury lamps, fireworks, and imitation germs, and clinically as an imaging agent in the diagnosis of certai...

Analyzing Resources of United States Marine Corps for Humanitarian Operations

DTIC Science & Technology

2014-08-26

years in the petrochemical, semiconductor, paper and pulp products, and steel industries, focusing on enabling corporate strategy by using the supply... Disease monitoring in remote areas Accurate information from host nation Clear procedures from DOS Clear areas of responsibility Collaboration

76 FR 66331 - Investigations Regarding Certifications of Eligibility To Apply for Worker Adjustment Assistance...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-10-26

... Semiconductor (Company). Phoenix, AZ 10/14/11 10/06/11 80510 Suntron Corporation Sugar Land, TX........ 10/14/11...- Shreveport, LA........ 10/14/11 10/13/11 Stop). 80515 AI Android Industries Shreveport, LA........ 10/14/11...

SRC: A Model of Industry-University Cooperation.

ERIC Educational Resources Information Center

Cavin, Ralph K., III; Phillips, D. Howard

1988-01-01

Describes the Semiconductor Research Corporation (SRC), a non-profit research cooperative designed to conduct research in the field of integrated circuits, principally in U.S. universities, with membership restricted to U.S.-owned companies. Analyzes SRC's impact on the U.S. educational system. (TW)

Advanced 3-V semiconductor technology assessment. [space communications

NASA Technical Reports Server (NTRS)

Nowogrodzki, M.

1983-01-01

Against a background of an extensive survey of the present state of the art in the field of III-V semiconductors for operation at microwave frequencies (or gigabit rate speeds), likely requirements of future space communications systems are identified, competing technologies and physical device limitations are discussed, and difficulties in implementing emerging technologies are projected. On the basis of these analyses, specific research and development programs required for the development of future systems components are recommended.

Optoelectronic Fibers via Selective Amplification of In-Fiber Capillary Instabilities.

PubMed

Wei, Lei; Hou, Chong; Levy, Etgar; Lestoquoy, Guillaume; Gumennik, Alexander; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

2017-01-01

Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger than any other drawn fiber device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Recent Progress on Stretchable Electronic Devices with Intrinsically Stretchable Components.

PubMed

Trung, Tran Quang; Lee, Nae-Eung

2017-01-01

Stretchable electronic devices with intrinsically stretchable components have significant inherent advantages, including simple fabrication processes, a high integrity of the stacked layers, and low cost in comparison with stretchable electronic devices based on non-stretchable components. The research in this field has focused on developing new intrinsically stretchable components for conductors, semiconductors, and insulators. New methodologies and fabrication processes have been developed to fabricate stretchable devices with intrinsically stretchable components. The latest successful examples of stretchable conductors for applications in interconnections, electrodes, and piezoresistive devices are reviewed here. Stretchable conductors can be used for electrode or sensor applications depending on the electrical properties of the stretchable conductors under mechanical strain. A detailed overview of the recent progress in stretchable semiconductors, stretchable insulators, and other novel stretchable materials is also given, along with a discussion of the associated technological innovations and challenges. Stretchable electronic devices with intrinsically stretchable components such as field-effect transistors (FETs), photodetectors, light-emitting diodes (LEDs), electronic skins, and energy harvesters are also described and a new strategy for development of stretchable electronic devices is discussed. Conclusions and future prospects for the development of stretchable electronic devices with intrinsically stretchable components are discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Superabsorbing, Artificial Metal Films Constructed from Semiconductor Nanoantennas.

PubMed

Kim, Soo Jin; Park, Junghyun; Esfandyarpour, Majid; Pecora, Emanuele F; Kik, Pieter G; Brongersma, Mark L

2016-06-08

In 1934, Wilhelm Woltersdorff demonstrated that the absorption of light in an ultrathin, freestanding film is fundamentally limited to 50%. He concluded that reaching this limit would require a film with a real-valued sheet resistance that is exactly equal to R = η/2 ≈ 188.5Ω/□, where [Formula: see text] is the impedance of free space. This condition can be closely approximated over a wide frequency range in metals that feature a large imaginary relative permittivity εr″, that is, a real-valued conductivity σ = ε0εr″ω. A thin, continuous sheet of semiconductor material does not facilitate such strong absorption as its complex-valued permittivity with both large real and imaginary components preclude effective impedance matching. In this work, we show how a semiconductor metafilm constructed from optically resonant semiconductor nanostructures can be created whose optical response mimics that of a metallic sheet. For this reason, the fundamental absorption limit mentioned above can also be reached with semiconductor materials, opening up new opportunities for the design of ultrathin optoelectronic and light harvesting devices.

Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jun, Young Chul; Luk, Ting S.; Robert Ellis, A.

2014-09-29

Here, we utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ0 ~ 6 ×10 -3, where d is the film thickness and λ0 is the free space wavelength). Wemore » show that this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.« less

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

NASA Technical Reports Server (NTRS)

Goorjian, Peter M.; Agrawal, Govind P.; Kwak, Dochan (Technical Monitor)

1996-01-01

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

The uses of Man-Made diamond in wafering applications

NASA Technical Reports Server (NTRS)

Fallon, D. B.

1982-01-01

The continuing, rapid growth of the semiconductor industry requires the involvement of several specialized industries in the development of special products geared toward the unique requirements of this new industry. A specialized manufactured diamond to meet various material removal needs was discussed. The area of silicon wafer slicing has presented yet anothr challenge and it is met most effectively. The history, operation, and performance of Man-Made diamond and particularly as applied to silicon wafer slicing is discussed. Product development is underway to come up with a diamond specifically for sawing silicon wafers on an electroplated blade.

7/5nm logic manufacturing capabilities and requirements of metrology

NASA Astrophysics Data System (ADS)

Bunday, Benjamin; Bello, A. F.; Solecky, Eric; Vaid, Alok

2018-03-01

This paper will provide an update to previous works [2][4][9] to our view of the future for in-line high volume manufacturing (HVM) metrology for the semiconductor industry, concentrating on logic technology for foundries. First, we will review of the needs of patterned defect, critical dimensional (CD/3D), overlay and films metrology, and present the extensive list of applications for which metrology solutions are needed. We will then update the industry's progress towards addressing gating technical limits of the most important of these metrology solutions, highlighting key metrology technology gaps requiring industry attention and investment.

A Computational Chemistry Database for Semiconductor Processing

NASA Technical Reports Server (NTRS)

Jaffe, R.; Meyyappan, M.; Arnold, J. O. (Technical Monitor)

1998-01-01

The concept of 'virtual reactor' or 'virtual prototyping' has received much attention recently in the semiconductor industry. Commercial codes to simulate thermal CVD and plasma processes have become available to aid in equipment and process design efforts, The virtual prototyping effort would go nowhere if codes do not come with a reliable database of chemical and physical properties of gases involved in semiconductor processing. Commercial code vendors have no capabilities to generate such a database, rather leave the task to the user of finding whatever is needed. While individual investigations of interesting chemical systems continue at Universities, there has not been any large scale effort to create a database. In this presentation, we outline our efforts in this area. Our effort focuses on the following five areas: 1. Thermal CVD reaction mechanism and rate constants. 2. Thermochemical properties. 3. Transport properties.4. Electron-molecule collision cross sections. and 5. Gas-surface interactions.

Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

NASA Astrophysics Data System (ADS)

John, J.; Prajapati, V.; Vermang, B.; Lorenz, A.; Allebe, C.; Rothschild, A.; Tous, L.; Uruena, A.; Baert, K.; Poortmans, J.

2012-08-01

Bulk crystalline Silicon solar cells are covering more than 85% of the world's roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF) technology has been developed in the 90's and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell). While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si) in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

NASA Tech Briefs, July 1999. Volume 23, No. 7

NASA Technical Reports Server (NTRS)

1999-01-01

Topics: Test and Measurement; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Software; Mechanics; Machinery/Automation; Bio-Medical; Books and Reports; Semiconductors/ICs.

Functional carbon nitride materials — design strategies for electrochemical devices

NASA Astrophysics Data System (ADS)

Kessler, Fabian K.; Zheng, Yun; Schwarz, Dana; Merschjann, Christoph; Schnick, Wolfgang; Wang, Xinchen; Bojdys, Michael J.

2017-06-01

In the past decade, research in the field of artificial photosynthesis has shifted from simple, inorganic semiconductors to more abundant, polymeric materials. For example, polymeric carbon nitrides have emerged as promising materials for metal-free semiconductors and metal-free photocatalysts. Polymeric carbon nitride (melon) and related carbon nitride materials are desirable alternatives to industrially used catalysts because they are easily synthesized from abundant and inexpensive starting materials. Furthermore, these materials are chemically benign because they do not contain heavy metal ions, thereby facilitating handling and disposal. In this Review, we discuss the building blocks of carbon nitride materials and examine how strategies in synthesis, templating and post-processing translate from the molecular level to macroscopic properties, such as optical and electronic bandgap. Applications of carbon nitride materials in bulk heterojunctions, laser-patterned memory devices and energy storage devices indicate that photocatalytic overall water splitting on an industrial scale may be realized in the near future and reveal a new avenue of 'post-silicon electronics'.

Emerging technologies for high performance infrared detectors

NASA Astrophysics Data System (ADS)

Tan, Chee Leong; Mohseni, Hooman

2018-01-01

Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

An ergonomics study of a semiconductors factory in an IDC for improvement in occupational health and safety.

PubMed

Bin, Wong Saw; Richardson, Stanley; Yeow, Paul H P

2010-01-01

The study aimed to conduct an ergonomic intervention on a conventional line (CL) in a semiconductor factory in Malaysia, an industrially developing country (IDC), to improve workers' occupational health and safety (OHS). Low-cost and simple (LCS) ergonomics methods were used (suitable for IDCs), e.g., subjective assessment, direct observation, use of archival data and assessment of noise. It was found that workers were facing noise irritation, neck and back pains and headache in the various processes in the CL. LCS ergonomic interventions to rectify the problems included installing noise insulating covers, providing earplugs, installing elevated platforms, slanting visual display terminals and installing extra exhaust fans. The interventions cost less than 3 000 USD but they significantly improved workers' OHS, which directly correlated with an improvement in working conditions and job satisfaction. The findings are useful in solving OHS problems in electronics industries in IDCs as they share similar manufacturing processes, problems and limitations.

Does your SEM really tell the truth?--How would you know? Part 1.

PubMed

Postek, Michael T; Vladár, András E

2013-01-01

The scanning electron microscope (SEM) has gone through a tremendous evolution to become a critical tool for many and diverse scientific and industrial applications. The high resolution of the SEM is especially suited for both qualitative and quantitative applications especially for nanotechnology and nanomanufacturing. Quantitatively, measurement, or metrology is one of the main uses. It is likely that one of the first questions asked before even the first scanning electron micrograph was ever recorded was: "… how big is that?" The quality of that answer has improved a great deal over the past few years especially since today these instruments are being used as a primary measurement tool on semiconductor processing lines to monitor the manufacturing processes. The well-articulated needs of semiconductor production prompted a rapid evolution of the instrument and its capabilities. Over the past 20 years or so, instrument manufacturers, through substantial semiconductor industry investment of research and development (R&D) money, have vastly improved the performance of these instruments. All users have benefited from this investment, especially where quantitative measurements with an SEM are concerned. But, how good are these data? This article discusses some of the most important aspects and larger issues associated with imaging and measurements with the SEM that every user should know, and understand before any critical quantitative work is attempted. © Wiley Periodicals, Inc.

Identifying airborne metal particles sources near an optoelectronic and semiconductor industrial park

NASA Astrophysics Data System (ADS)

Chen, Ho-Wen; Chen, Wei-Yea; Chang, Cheng-Nan; Chuang, Yen-Hsun; Lin, Yu-Hao

2016-06-01

The recently developed Central Taiwan Science Park (CTSP) in central Taiwan is home to an optoelectronic and semiconductor industrial cluster. Therefore, exploring the elemental compositions and size distributions of airborne particles emitted from the CTSP would help to prevent pollution. This study analyzed size-fractionated metal-rich particle samples collected in upwind and downwind areas of CTSP during Jan. and Oct. 2013 by using micro-orifice uniform deposited impactor (MOUDI). Correlation analysis, hierarchical cluster analysis and particle mass-size distribution analysis are performed to identify the source of metal-rich particle near the CTSP. Analyses of elemental compositions and particle size distributions emitted from the CTSP revealed that the CTSP emits some metals (V, As, In Ga, Cd and Cu) in the ultrafine particles (< 1 μm). The statistical analysis combines with the particle mass-size distribution analysis could provide useful source identification information. In airborne particles with the size of 0.32 μm, Ga could be a useful pollution index for optoelectronic and semiconductor emission in the CTSP. Meanwhile, the ratios of As/Ga concentration at the particle size of 0.32 μm demonstrates that humans near the CTSP would be potentially exposed to GaAs ultrafine particles. That is, metals such as Ga and As and other metals that are not regulated in Taiwan are potentially harmful to human health.

Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

NASA Astrophysics Data System (ADS)

Helal, Yaser H.

Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma chamber. The measurement of transmission spectra was simultaneously fit for background and absorption signal. The measured absorption signal was used to calculate absolute densities and temperatures of polar species. Measurements of molecular species were demonstrated for inductively coupled plasmas.

Seed-induced growth of flower-like Au-Ni-ZnO metal-semiconductor hybrid nanocrystals for photocatalytic applications.

PubMed

Chen, Yuanzhi; Zeng, Deqian; Cortie, Michael B; Dowd, Annette; Guo, Huizhang; Wang, Junbao; Peng, Dong-Liang

2015-03-25

The combination of metal and semiconductor components in nanoscale to form a hybrid nanocrystal provides an important approach for achieving advanced functional materials with special optical, magnetic and photocatalytic functionalities. Here, a facile solution method is reported for the synthesis of Au-Ni-ZnO metal-semiconductor hybrid nanocrystals with a flower-like morphology and multifunctional properties. This synthetic strategy uses noble and magnetic metal Au@Ni nanocrystal seeds formed in situ to induce the heteroepitaxial growth of semiconducting ZnO nanopyramids onto the surface of metal cores. Evidence of epitaxial growth of ZnO{0001} facets on Ni {111} facets is observed on the heterojunction, even though there is a large lattice mismatch between the semiconducting and magnetic components. Adjustment of the amount of Au and Ni precursors can control the size and composition of the metal core, and consequently modify the surface plasmon resonance (SPR) and magnetic properties. Room-temperature superparamagnetic properties can be achieved by tuning the size of Ni core. The as-prepared Au-Ni-ZnO nanocrystals are strongly photocatalytic and can be separated and re-cycled by virtue of their magnetic properties. The simultaneous combination of plasmonic, semiconducting and magnetic components within a single hybrid nanocrystal furnishes it multifunctionalities that may find wide potential applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Beam shaping optics to enhance performance of interferometry techniques in grating manufacture

NASA Astrophysics Data System (ADS)

Laskin, Alexander; Laskin, Vadim; Ostrun, Aleksei

2018-02-01

Improving of industrial holographic and interferometry techniques is of great importance in interference lithography, computer-generated holography, holographic data storage, interferometry recording of Bragg gratings as well as gratings of various types in semiconductor industry. Performance of mentioned techniques is essentially enhanced by providing a light beam with flat phase front and flat-top irradiance distribution. Therefore, transformation of Gaussian distribution of a TEM00 laser to flat-top (top hat, uniform) distribution is an important optical task. There are different refractive and diffractive beam shaping approaches used in laser industrial and scientific applications, but only few of them are capable to fulfil the optimum conditions for beam quality demanding holography and interferometry. As a solution it is suggested to apply refractive field mapping beam shaping optics πShaper, which operational principle presumes almost lossless transformation of Gaussian to flat-top beam with flatness of output wavefront, conserving of beam consistency, providing collimated low divergent output beam, high transmittance, extended depth of field, negligible wave aberration, and achromatic design provides capability to work with several lasers with different wavelengths simultaneously. High optical quality of resulting flat-top beam allows applying additional optical components to build various imaging optical systems for variation of beam size and shape to fulfil requirements of a particular application. This paper will describe design basics of refractive beam shapers and optical layouts of their applying in holography and laser interference lithography. Examples of real implementations and experimental results will be presented as well.

Semiconductor electrolyte photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Anderson, W. W.; Anderson, L. B.

1975-01-01

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Gyeong Won; Shim, Jong-In; Shin, Dong-Soo, E-mail: dshin@hanyang.ac.kr

While there have been many discussions on the standard Si pn-diodes, little attention has been paid and confusion still arises on the ideality factor of the radiative recombination current in semiconductor light-emitting diodes (LEDs). In this letter, we theoretically demonstrate and experimentally confirm by using blue and infrared semiconductor LEDs that the ideality factor of the radiative recombination current is unity especially for low-current-density ranges. We utilize the data of internal quantum efficiency measured by the temperature-dependent electroluminescence to separate the radiative current component from the total current.

Mechanical Properties of Organic Semiconductors for Stretchable, Highly Flexible, and Mechanically Robust Electronics.

PubMed

Root, Samuel E; Savagatrup, Suchol; Printz, Adam D; Rodriquez, Daniel; Lipomi, Darren J

2017-05-10

Mechanical deformability underpins many of the advantages of organic semiconductors. The mechanical properties of these materials are, however, diverse, and the molecular characteristics that permit charge transport can render the materials stiff and brittle. This review is a comprehensive description of the molecular and morphological parameters that govern the mechanical properties of organic semiconductors. Particular attention is paid to ways in which mechanical deformability and electronic performance can coexist. The review begins with a discussion of flexible and stretchable devices of all types, and in particular the unique characteristics of organic semiconductors. It then discusses the mechanical properties most relevant to deformable devices. In particular, it describes how low modulus, good adhesion, and absolute extensibility prior to fracture enable robust performance, along with mechanical "imperceptibility" if worn on the skin. A description of techniques of metrology precedes a discussion of the mechanical properties of three classes of organic semiconductors: π-conjugated polymers, small molecules, and composites. The discussion of each class of materials focuses on molecular structure and how this structure (and postdeposition processing) influences the solid-state packing structure and thus the mechanical properties. The review concludes with applications of organic semiconductor devices in which every component is intrinsically stretchable or highly flexible.

Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment.

PubMed

Kao, Chyuan-Haur; Chang, Chia Lung; Su, Wei Ming; Chen, Yu Tzu; Lu, Chien Cheng; Lee, Yu Shan; Hong, Chen Hao; Lin, Chan-Yu; Chen, Hsiang

2017-08-03

Magnesium oxide (MgO) sensing membranes in pH-sensitive electrolyte-insulator-semiconductor structures were fabricated on silicon substrate. To optimize the sensing capability of the membrane, CF 4 plasma was incorporated to improve the material quality of MgO films. Multiple material analyses including FESEM, XRD, AFM, and SIMS indicate that plasma treatment might enhance the crystallization and increase the grain size. Therefore, the sensing behaviors in terms of sensitivity, linearity, hysteresis effects, and drift rates might be improved. MgO-based EIS membranes with CF 4 plasma treatment show promise for future industrial biosensing applications.

A superhard sp3 microporous carbon with direct bandgap

NASA Astrophysics Data System (ADS)

Pan, Yilong; Xie, Chenlong; Xiong, Mei; Ma, Mengdong; Liu, Lingyu; Li, Zihe; Zhang, Shuangshuang; Gao, Guoying; Zhao, Zhisheng; Tian, Yongjun; Xu, Bo; He, Julong

2017-12-01

Carbon allotropes with distinct sp, sp2, and sp3 hybridization possess various different properties. Here, a novel all-sp3 hybridized tetragonal carbon, namely the P carbon, was predicted by the evolutionary particle swarm structural search. It demonstrated a low density among all-sp3 carbons, due to the corresponding distinctive microporous structure. P carbon is thermodynamically stable than the known C60 and could be formed through the single-walled carbon nanotubes (SWCNTs) compression. P carbon is a direct bandgap semiconductor displaying a strong and superhard nature. The unique combination of electrical and mechanical properties constitutes P carbon a potential superhard material for semiconductor industrial fields.

Emissions of Tetrafluoromethane (CF4) and Hexafluoroethane (C2F6) from East Asian Aluminum and Semiconductor Industries

NASA Astrophysics Data System (ADS)

Kim, J.; Li, S.; Muhle, J.; Fang, X.; Manning, A. J.; Arnold, T.; Park, S.; Park, M.; Saito, T.; Yokouchi, Y.; Stohl, A.; Weiss, R. F.; Kim, K.

2013-12-01

Tetrafluoromethane (CF4) and Hexafluoroethane (C2F6) are among the most potent greenhouse gases (GHGs), with atmospheric lifetimes of 50,000 and 10,000 years and 100-year Global Warming Potentials of 7,490 and 12,200, respectively. The Chinese aluminum smelting (AL) industry, accounting for 39% of the global aluminum production in 2010, has become a significant emitter of these compounds to the atmosphere, . The AL industry has estimated its Chinese emissions averaged over 2008-2010 at 1.4 Gg/yr of CF4 and 0.06 Gg/yr of C2F6. In this study we combine East Asian measurements of C2F6 at Gosan (Jeju Island, Korea), Hateruma, and Ochi-Ishi (Japan) and of CF4 at Gosan, using inversion techniques and two Lagrangian particle dispersion models (FLEXPART and NAME), to estimate the emissions of these two compounds from China and East Asia. Our results yield total emissions from China for the 2008-2010 period of approximately 4 × 0.5 Gg/yr for CF4 and 0.8 × 0.1 Gg/yr for C2F6. These results may be reconciled if emissions of these compounds from China's semiconductor (SC) industry are larger than currently estimated. However, evidence presented in the analysis of the inversion results and in the C2F6/CF4 emission ratios observed for China suggest that China's AL industry emissions are likely to be the dominant source of the discrepancy between reported emissions and those inferred from atmospheric measurements. As the AL and SC industries evolve toward new manufacturing technologies that reduce GHG emissions, continued and improved atmospheric measurements and modeling in this region will be useful in assessing the effectiveness of these changes.

Interaction, transformation and toxicity assessment of particles and additives used in the semiconducting industry.

PubMed

Dumitrescu, Eduard; Karunaratne, Dinusha P; Babu, S V; Wallace, Kenneth N; Andreescu, Silvana

2018-02-01

Chemical mechanical planarization (CMP) is a widely used technique for the manufacturing of integrated circuit chips in the semiconductor industry. The process generates large amounts of waste containing engineered particles, chemical additives, and chemo-mechanically removed compounds. The environmental and health effects associated with the release of CMP materials are largely unknown and have recently become of significant concern. Using a zebrafish embryo assay, we established toxicity profiles of individual CMP particle abrasives (SiO 2 and CeO 2 ), chemical additives (hydrogen peroxide, proline, glycine, nicotinic acid, and benzotriazole), as well as three model representative slurries and their resulting waste. These materials were characterized before and after use in a typical CMP process in order to assess changes that may affect their toxicological profile and alter their surface chemistry due to polishing. Toxicity outcome in zebrafish is discussed in relation with the physicochemical characteristics of the abrasive particles and with the type and concentration profile of the slurry components pre and post-polishing, as well as the interactions between particle abrasives and additives. This work provides toxicological information of realistic CMP slurries and their polishing waste, and can be used as a guideline to predict the impact of these materials in the environment. Copyright © 2017 Elsevier Ltd. All rights reserved.

40 CFR 469.11 - Compliance dates.

Code of Federal Regulations, 2010 CFR

2010-07-01

... STANDARDS ELECTRICAL AND ELECTRONIC COMPONENTS POINT SOURCE CATEGORY Semiconductor Subcategory § 469.11... BCT limitations for total toxic organics (TTO) and pH, respectively, is as soon as possible as...

40 CFR 469.11 - Compliance dates.

Code of Federal Regulations, 2011 CFR

2011-07-01

... STANDARDS ELECTRICAL AND ELECTRONIC COMPONENTS POINT SOURCE CATEGORY Semiconductor Subcategory § 469.11... BCT limitations for total toxic organics (TTO) and pH, respectively, is as soon as possible as...

NASA Tech Briefs, September 2000. Volume 24, No. 9

NASA Technical Reports Server (NTRS)

2000-01-01

Topics include: Sensors; Test and Measurement; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Bio-Medical; semiconductors/ICs; Books and Reports.

Electronic Properties of III-V Semiconductor Interfaces.

DTIC Science & Technology

1980-11-30

ONG . REPORT NUMBER S.B CONTRACT 0R GRANT NUMSERa) S. PERFORMING ORGANIZATION NAMIE AND ADDRESS 10. PROGRAM EL.EMIENT. PROJECT. TASK AREA G WORK UNIT...Fred Nedoluha, Dave Collins, Larry Mainers, Derek Lile, and Carl Zeisse. And several of the samples studied were supplied by industrial colleagues

High Definition Television: A New Challenge for Telecommunication Policy.

ERIC Educational Resources Information Center

Hongcharu, Boonchai

The telecommunications industry has now entered the most critical period of evolution in television technology since the introduction of color television. The transition to high definition television (HDTV), with related technologies such as semiconductors and computers, would mean a multi-billion dollar business for the telecommunications…

15 CFR Supplement No. 3 to Part 752 - Instructions on Completing Form BIS-752 “Statement by Consignee In Support of Special...

Code of Federal Regulations, 2010 CFR

2010-01-01

... OF INDUSTRY AND SECURITY, DEPARTMENT OF COMMERCE EXPORT ADMINISTRATION REGULATIONS SPECIAL... results in a change of identity of the U.S.-item (e.g., U.S.-origin semiconductor devices are included in...

International comparison CCQM-K113—noble gas mixture

NASA Astrophysics Data System (ADS)

Lim, Jeong Sik; Lee, Jinbok; Moon, Dongmin; Tshilongo, James; Qiao, Han; Shuguo, Hu; Tiqiang, Zhang; Kelley, Michael E.; Rhoderick, George C.; Konopelko, L. A.; Kolobova, A. V.; Vasserman, I. I.; Zavyalov, S. V.; Gromova, E. V.; Efremova, O. V.

2017-01-01

Noble gases are one of the key elements used in the various processes of the bulbs industry, automotive industry, space industry, lasers industry, display industry as well as the semiconductor industry. Considering continuous growth, the provision of a reliable standard is required for those industries to improve their productivity. In this report, a result of the key comparison, CCQM-K113: noble gas mixture, is presented. Nominal amount-of-substance fractions of argon, neon, krypton, and xenon in helium are 20, 10, 2, and 1 cmol/mol, respectively. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCQM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

On-product overlay enhancement using advanced litho-cluster control based on integrated metrology, ultra-small DBO targets and novel corrections

NASA Astrophysics Data System (ADS)

Bhattacharyya, Kaustuve; Ke, Chih-Ming; Huang, Guo-Tsai; Chen, Kai-Hsiung; Smilde, Henk-Jan H.; Fuchs, Andreas; Jak, Martin; van Schijndel, Mark; Bozkurt, Murat; van der Schaar, Maurits; Meyer, Steffen; Un, Miranda; Morgan, Stephen; Wu, Jon; Tsai, Vincent; Liang, Frida; den Boef, Arie; ten Berge, Peter; Kubis, Michael; Wang, Cathy; Fouquet, Christophe; Terng, L. G.; Hwang, David; Cheng, Kevin; Gau, TS; Ku, Y. C.

2013-04-01

Aggressive on-product overlay requirements in advanced nodes are setting a superior challenge for the semiconductor industry. This forces the industry to look beyond the traditional way-of-working and invest in several new technologies. Integrated metrology2, in-chip overlay control, advanced sampling and process correction-mechanism (using the highest order of correction possible with scanner interface today), are a few of such technologies considered in this publication.

Tool Efficiency Analysis model research in SEMI industry

NASA Astrophysics Data System (ADS)

Lei, Ma; Nana, Zhang; Zhongqiu, Zhang

2018-06-01

One of the key goals in SEMI industry is to improve equipment through put and ensure equipment production efficiency maximization. This paper is based on SEMI standards in semiconductor equipment control, defines the transaction rules between different tool states, and presents a TEA system model which is to analysis tool performance automatically based on finite state machine. The system was applied to fab tools and verified its effectiveness successfully, and obtained the parameter values used to measure the equipment performance, also including the advices of improvement.

Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistor

NASA Astrophysics Data System (ADS)

Maekawa, Keiichi; Makiyama, Hideki; Yamamoto, Yoshiki; Hasegawa, Takumi; Okanishi, Shinobu; Sonoda, Kenichiro; Shinkawata, Hiroki; Yamashita, Tomohiro; Kamohara, Shiro; Yamaguchi, Yasuo

2018-04-01

The low-frequency noise (LFN) variability in bulk and fully depleted silicon-on-insulator (FDSOI) metal–oxide–semiconductor field-effect transistor (MOSFET) with silicon on thin box (SOTB) technology was investigated. LFN typically shows a flicker noise component and a signal Lorentzian component by random telegraph noise (RTN). At a weak inversion state, the random dopant fluctuation (RDF) in a channel is strongly affected to not only RTN variability but also flicker noise variability in the bulk MOSFET compared with SOTB MOSFET because of local carrier number fluctuation in the channel. On the other hand, the typical level of LFN in SOTB MOSFET is slightly larger than that in the bulk MOSFET because of an additional interface on the buried oxide layer. However, considering the tailing characteristics of LFN variability, LFN in SOTB MOSFET can be assumed to be smaller than that in the bulk MOSFET, which enables the low-voltage operation of analog circuits.

Low-Cost and Large-Area Electronics, Roll-to-Roll Processing and Beyond

NASA Astrophysics Data System (ADS)

Wiesenhütter, Katarzyna; Skorupa, Wolfgang

In the following chapter, the authors conduct a literature survey of current advances in state-of-the-art low-cost, flexible electronics. A new emerging trend in the design of modern semiconductor devices dedicated to scaling-up, rather than reducing, their dimensions is presented. To realize volume manufacturing, alternative semiconductor materials with superior performance, fabricated by innovative processing methods, are essential. This review provides readers with a general overview of the material and technology evolution in the area of macroelectronics. Herein, the term macroelectronics (MEs) refers to electronic systems that can cover a large area of flexible media. In stark contrast to well-established micro- and nano-scale semiconductor devices, where property improvement is associated with downscaling the dimensions of the functional elements, in macroelectronic systems their overall size defines the ultimate performance (Sun and Rogers in Adv. Mater. 19:1897-1916, 2007). The major challenges of large-scale production are discussed. Particular attention has been focused on describing advanced, short-term heat treatment approaches, which offer a range of advantages compared to conventional annealing methods. There is no doubt that large-area, flexible electronic systems constitute an important research topic for the semiconductor industry. The ability to fabricate highly efficient macroelectronics by inexpensive processes will have a significant impact on a range of diverse technology sectors. A new era "towards semiconductor volume manufacturing…" has begun.

A Comprehensive study of the Effects of Chain Morphology on the Transport Properties of Amorphous Polymer Films

NASA Astrophysics Data System (ADS)

Mendels, Dan; Tessler, Nir

2016-07-01

Organic semiconductors constitute one of the main components underlying present-day paradigm shifting optoelectronic applications. Among them, polymer based semiconductors are deemed particularly favorable due to their natural compatibility with low-cost device fabrication techniques. In light of recent advances in the syntheses of these classes of materials, yielding systems exhibiting charge mobilities comparable with those found in organic crystals, a comprehensive study of their charge transport properties is presented. Among a plethora of effects arising from these systems morphological and non morphological attributes, it is shown that a favorable presence of several of these attributes, including that of rapid on-chain carrier propagation and the presence of elongated conjugation segments, can lead to an enhancement of the system’s mobility by more than 5 orders of magnitude with respect to ‘standard’ amorphous organic semiconductors. New insight for the formulation of new engineering strategies for next generation polymer based semiconductors is thus gathered.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Spatial fluctuations in barrier height at the graphene-silicon carbide Schottky junction.

PubMed

Rajput, S; Chen, M X; Liu, Y; Li, Y Y; Weinert, M; Li, L

2013-01-01

When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization-the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene-silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction-a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.

High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

2002-01-01

It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

Patterning roadmap: 2017 prospects

NASA Astrophysics Data System (ADS)

Neisser, Mark

2017-06-01

Road mapping of semiconductor chips has been underway for over 20 years, first with the International Technology Roadmap for Semiconductors (ITRS) roadmap and now with the International Roadmap for Devices and Systems (IRDS) roadmap. The original roadmap was mostly driven bottom up and was developed to ensure that the large numbers of semiconductor producers and suppliers had good information to base their research and development on. The current roadmap is generated more top-down, where the customers of semiconductor chips anticipate what will be needed in the future and the roadmap projects what will be needed to fulfill that demand. The More Moore section of the roadmap projects that advanced logic will drive higher-resolution patterning, rather than memory chips. Potential solutions for patterning future logic nodes can be derived as extensions of `next-generation' patterning technologies currently under development. Advanced patterning has made great progress, and two `next-generation' patterning technologies, EUV and nanoimprint lithography, have potential to be in production as early as 2018. The potential adoption of two different next-generation patterning technologies suggests that patterning technology is becoming more specialized. This is good for the industry in that it lowers overall costs, but may lead to slower progress in extending any one patterning technology in the future.

Emission characteristics of volatile organic compounds from semiconductor manufacturing.

PubMed

Chein, HungMin; Chen, Tzu Ming

2003-08-01

A huge amount of volatile organic compounds (VOCs) is produced and emitted with waste gases from semiconductor manufacturing processes, such as cleaning, etching, and developing. VOC emissions from semiconductor factories located at Science-Based Industrial Park, Hsin-chu, Taiwan, were measured and characterized in this study. A total of nine typical semiconductor fabricators (fabs) were monitored over a 12-month period (October 2000-September 2001). A flame ionization analyzer was employed to measure the VOC emission rate continuously in a real-time fashion. The amount of chemical use was adopted from the data that were reported to the Environmental Protection Bureau in Hsin-chu County as per the regulation of the Taiwan Environmental Protection Administration. The VOC emission factor, defined as the emission rate (kg/month) divided by the amount of chemical use (L/month), was determined to be 0.038 +/- 0.016 kg/L. A linear regression equation is proposed to fit the data with the correlation coefficient (R2)=0.863. The emission profiles of VOCs, which were drawn using the gas chromatograph/mass spectrometer analysis method, show that isopropyl alcohol is the dominant compound in most of the fabs.

Progress in ion torrent semiconductor chip based sequencing.

PubMed

Merriman, Barry; Rothberg, Jonathan M

2012-12-01

In order for next-generation sequencing to become widely used as a diagnostic in the healthcare industry, sequencing instrumentation will need to be mass produced with a high degree of quality and economy. One way to achieve this is to recast DNA sequencing in a format that fully leverages the manufacturing base created for computer chips, complementary metal-oxide semiconductor chip fabrication, which is the current pinnacle of large scale, high quality, low-cost manufacturing of high technology. To achieve this, ideally the entire sensory apparatus of the sequencer would be embodied in a standard semiconductor chip, manufactured in the same fab facilities used for logic and memory chips. Recently, such a sequencing chip, and the associated sequencing platform, has been developed and commercialized by Ion Torrent, a division of Life Technologies, Inc. Here we provide an overview of this semiconductor chip based sequencing technology, and summarize the progress made since its commercial introduction. We described in detail the progress in chip scaling, sequencing throughput, read length, and accuracy. We also summarize the enhancements in the associated platform, including sample preparation, data processing, and engagement of the broader development community through open source and crowdsourcing initiatives. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Past and Present of the Chinese and Korean Trainees and Survival of a Small Manufacturing Industry

NASA Astrophysics Data System (ADS)

Nishihata, Mikio

In 1973, the author established the Nippon Bell Parts Co., Ltd. in Funabashi-city under his estimation of the advances in communication, information, semiconductor and automotive industries, then he has focused on R&D and developed the manufacturing of precise parts. During the past 30 years, he has himself experienced the importance of the mutual exchange between Japan and China and Korea, for keeping the human capability as well as for the management and the technical development to avoid a bankruptcy. The author is intentionally acting for the education of craftsmen in small and medium-sized manufacturing industries.

75 FR 20003 - Notice Pursuant to the National Cooperative Research and Production Act of 1993-Wireless...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-16

... circumstances. Specifically, Freescale Semiconductor, Inc., Austin, TX; and Cooper Industries, Houston, TX have... DEPARTMENT OF JUSTICE Antitrust Division Notice Pursuant to the National Cooperative Research and... 12, 2010, pursuant to Section 6(a) of the National Cooperative Research and Production Act of 1993...

Speeding Products to Market: Waiting Time to First Product Introduction in New Firms.

ERIC Educational Resources Information Center

Schoonhoven, Claudia Bird; And Others

1990-01-01

Using event-history analysis techniques, a longitudinal study of the semiconductor industry found that substantial technological innovation lengthens development times and reduces the speed with which first products reach the marketplace. Organizations that undertook lower levels of technological innovation had relatively lower monthly…

Optimizing Resources of United States Navy for Humanitarian Operations

DTIC Science & Technology

2014-08-26

advised U.S. and European firms for several years in the petrochemical, semiconductor, paper and pulp products, and steel industries, focusing on enabling...roads are not traversable and bridges have collapsed. There is no potable water available. There is the fear of outbreak of diseases like cholera and

The Development and Institutionalization of Subunit Power in Organizations.

ERIC Educational Resources Information Center

Boeker, Warren

1989-01-01

Examines the effects of founding events on the evolution of subunit importance in the semiconductor industry from 1958 to 1985. Distributions of power and subunit importance represent not only influences of current conditions, but also vestiges of earlier events, including the institution's founding. Includes 55 references. (MLH)

Architectural Innovation: The Reconfiguration of Existing Product Technologies and the Failure of Established Firms.

ERIC Educational Resources Information Center

Henderson, Rebecca M.; Clark, Kim B.

1990-01-01

Using an empirical study of the semiconductor photolithographic alignment equipment industry, this paper shows that architectural innovations destroy the usefulness of established firms' architectural knowledge. Because this knowledge is embedded in the firms' structure and information-processing procedures, the destruction is hard to detect.…

Workplace Skills in Practice. Case Studies of Technical Work.

ERIC Educational Resources Information Center

Stasz, Cathleen; And Others

A study was conducted to explore skills and work-related dispositions in technical work. It used a sociocultural approach to examine skills in seven target jobs in worksites representing diverse industries--health care, traffic management, transportation, and semiconductor manufacturing. It explored employers' strategies for obtaining the skills…

77 FR 32010 - Applications (Classification, Advisory, and License) and Documentation

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-31

... DEPARTMENT OF COMMERCE Bureau of Industry and Security 15 CFR Part 748 Applications (Classification, Advisory, and License) and Documentation CFR Correction 0 In Title 15 of the Code of Federal... fourth column of the table, the two entries for ``National Semiconductor Hong Kong Limited'' are removed...

POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

EPA Science Inventory

A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

Design of Molecular Materials: Supramolecular Engineering

NASA Astrophysics Data System (ADS)

Simon, Jacques; Bassoul, Pierre

2001-02-01

This timely and fascinating book is destined to be recognised as THE book on supramolecular engineering protocols. It covers this sometimes difficult subject in an approachable form, gathering together information from many sources. Supramolecular chemistry, which links organic chemistry to materials science, is one of the fastest growth areas of chemistry research. This book creates a correlation between the structure of single molecules and the physical and chemical properties of the resulting materials. By making systematic changes to the component molecules, the resulting solid can be engineered for optimum performance. There is a clearly written development from synthesis of designer molecules to properties of solids and further on to devices and complex materials systems, providing guidelines for mastering the organisation of these systems. Topics covered include: Systemic chemistry Molecular assemblies Notions of symmetry Supramolecular engineering Principe de Curie Organisation in molecular media Molecular semiconductors Industrial applications of molecular materials This superb book will be invaluable to researchers in the field of supramolecular materials and also to students and teachers of the subject.

Plasma Surface Interactions Common to Advanced Fusion Wall Materials and EUV Lithography - Lithium and Tin

NASA Astrophysics Data System (ADS)

Ruzic, D. N.; Alman, D. A.; Jurczyk, B. E.; Stubbers, R.; Coventry, M. D.; Neumann, M. J.; Olczak, W.; Qiu, H.

2004-09-01

Advanced plasma facing components (PFCs) are needed to protect walls in future high power fusion devices. In the semiconductor industry, extreme ultraviolet (EUV) sources are needed for next generation lithography. Lithium and tin are candidate materials in both areas, with liquid Li and Sn plasma material interactions being critical. The Plasma Material Interaction Group at the University of Illinois is leveraging liquid metal experimental and computational facilities to benefit both fields. The Ion surface InterAction eXperiment (IIAX) has measured liquid Li and Sn sputtering, showing an enhancement in erosion with temperature for light ion bombardment. Surface Cleaning of Optics by Plasma Exposure (SCOPE) measures erosion and damage of EUV mirror samples, and tests cleaning recipes with a helicon plasma. The Flowing LIquid surface Retention Experiment (FLIRE) measures the He and H retention in flowing liquid metals, with retention coefficients varying between 0.001 at 500 eV to 0.01 at 4000 eV.

U.S. Reliance on Foreign IT: Mitigating Risks Associated with Foreign Sources of Hardware Components, Summer 2008 - Project 08-03

DTIC Science & Technology

2008-08-01

REPORT MAY 2008 - AUGUST 2008 U.S. Reliance on Foreign IT: Mitigating Risks Associated with Foreign Sources of Hardware Components N/A N/A N/A 08...Clinger-Cohen Act CIA Central Intelligence Agency CIO Chief Information Officer CMOS Complimentary Metal -Oxide Semiconductor DARPA Defense Advanced

Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jun, Young Chul, E-mail: youngchul.jun@inha.ac.kr; Luk, Ting S., E-mail: tsluk@sandia.gov; Brener, Igal

2014-09-29

We utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ{sub 0} ∼ 6×10{sup −3}, where d is the film thickness and  λ{sub 0} is the free space wavelength). We show thatmore » this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.« less

Bacteria inside semiconductors as potential sensor elements: biochip progress.

PubMed

Sah, Vasu R; Baier, Robert E

2014-06-24

It was discovered at the beginning of this Century that living bacteria-and specifically the extremophile Pseudomonas syzgii-could be captured inside growing crystals of pure water-corroding semiconductors-specifically germanium-and thereby initiated pursuit of truly functional "biochip-based" biosensors. This observation was first made at the inside ultraviolet-illuminated walls of ultrapure water-flowing semiconductor fabrication facilities (fabs) and has since been, not as perfectly, replicated in simpler flow cell systems for chip manufacture, described here. Recognizing the potential importance of these adducts as optical switches, for example, or probes of metabolic events, the influences of the fabs and their components on the crystal nucleation and growth phenomena now identified are reviewed and discussed with regard to further research needs. For example, optical beams of current photonic circuits can be more easily modulated by integral embedded cells into electrical signals on semiconductors. Such research responds to a recently published Grand Challenge in ceramic science, designing and synthesizing oxide electronics, surfaces, interfaces and nanoscale structures that can be tuned by biological stimuli, to reveal phenomena not otherwise possible with conventional semiconductor electronics. This short review addresses only the fabrication facilities' features at the time of first production of these potential biochips.

Ordered porous mesostructured materials from nanoparticle-block copolymer self-assembly

DOEpatents

Warren, Scott; Wiesner, Ulrich; DiSalvo, Jr., Francis J

2013-10-29

The invention provides mesostructured materials and methods of preparing mesostructured materials including metal-rich mesostructured nanoparticle-block copolymer hybrids, porous metal-nonmetal nanocomposite mesostructures, and ordered metal mesostructures with uniform pores. The nanoparticles can be metal, metal alloy, metal mixture, intermetallic, metal-carbon, metal-ceramic, semiconductor-carbon, semiconductor-ceramic, insulator-carbon or insulator-ceramic nanoparticles, or combinations thereof. A block copolymer/ligand-stabilized nanoparticle solution is cast, resulting in the formation of a metal-rich (or semiconductor-rich or insulator-rich) mesostructured nanoparticle-block copolymer hybrid. The hybrid is heated to an elevated temperature, resulting in the formation of an ordered porous nanocomposite mesostructure. A nonmetal component (e.g., carbon or ceramic) is then removed to produce an ordered mesostructure with ordered and large uniform pores.

The need for LWR metrology standardization: the imec roughness protocol

NASA Astrophysics Data System (ADS)

Lorusso, Gian Francesco; Sutani, Takumichi; Rutigliani, Vito; van Roey, Frieda; Moussa, Alain; Charley, Anne-Laure; Mack, Chris; Naulleau, Patrick; Constantoudis, Vassilios; Ikota, Masami; Ishimoto, Toru; Koshihara, Shunsuke

2018-03-01

As semiconductor technology keeps moving forward, undeterred by the many challenges ahead, one specific deliverable is capturing the attention of many experts in the field: Line Width Roughness (LWR) specifications are expected to be less than 2nm in the near term, and to drop below 1nm in just a few years. This is a daunting challenge and engineers throughout the industry are trying to meet these targets using every means at their disposal. However, although current efforts are surely admirable, we believe they are not enough. The fact is that a specification has a meaning only if there is an agreed methodology to verify if the criterion is met or not. Such a standardization is critical in any field of science and technology and the question that we need to ask ourselves today is whether we have a standardized LWR metrology or not. In other words, if a single reference sample were provided, would everyone measuring it get reasonably comparable results? We came to realize that this is not the case and that the observed spread in the results throughout the industry is quite large. In our opinion, this makes the comparison of LWR data among institutions, or to a specification, very difficult. In this paper, we report the spread of measured LWR data across the semiconductor industry. We investigate the impact of image acquisition, measurement algorithm, and frequency analysis parameters on LWR metrology. We review critically some of the International Technology Roadmap for Semiconductors (ITRS) metrology guidelines (such as measurement box length larger than 2μm and the need to correct for SEM noise). We compare the SEM roughness results to AFM measurements. Finally, we propose a standardized LWR measurement protocol - the imec Roughness Protocol (iRP) - intended to ensure that every time LWR measurements are compared (from various sources or to specifications), the comparison is sensible and sound. We deeply believe that the industry is at a point where it is imperative to guarantee that when talking about a critical parameter such like LWR, everyone speaks the same language, which is not currently the case.

Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp

DOEpatents

Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Urbana, IL; Lee, Keon Jae [Tokyo, JP; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Champaign, IL; Meitl, Matthew [Champaign, IL; Zhu, Zhengtao [Urbana, IL

2011-05-17

The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of `soft adhesion` to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

Subwavelength InSb-based Slot wavguides for THz transport: concept and practical implementations.

PubMed

Ma, Youqiao; Zhou, Jun; Pištora, Jaromír; Eldlio, Mohamed; Nguyen-Huu, Nghia; Maeda, Hiroshi; Wu, Qiang; Cada, Michael

2016-12-07

Seeking better surface plasmon polariton (SPP) waveguides is of critical importance to construct the frequency-agile terahertz (THz) front-end circuits. We propose and investigate here a new class of semiconductor-based slot plasmonic waveguides for subwavelength THz transport. Optimizations of the key geometrical parameters demonstrate its better guiding properties for simultaneous realization of long propagation lengths (up to several millimeters) and ultra-tight mode confinement (~λ 2 /530) in the THz spectral range. The feasibility of the waveguide for compact THz components is also studied to lay the foundations for its practical implementations. Importantly, the waveguide is compatible with the current complementary metal-oxide-semiconductor (CMOS) fabrication technique. We believe the proposed waveguide configuration could offer a potential for developing a CMOS plasmonic platform and can be designed into various components for future integrated THz circuits (ITCs).

Fundamentals handbook of electrical and computer engineering. Volume 1 Circuits fields and electronics

NASA Astrophysics Data System (ADS)

Chang, S. S. L.

State of the art technology in circuits, fields, and electronics is discussed. The principles and applications of these technologies to industry, digital processing, microwave semiconductors, and computer-aided design are explained. Important concepts and methodologies in mathematics and physics are reviewed, and basic engineering sciences and associated design methods are dealt with, including: circuit theory and the design of magnetic circuits and active filter synthesis; digital signal processing, including FIR and IIR digital filter design; transmission lines, electromagnetic wave propagation and surface acoustic wave devices. Also considered are: electronics technologies, including power electronics, microwave semiconductors, GaAs devices, and magnetic bubble memories; digital circuits and logic design.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

1995-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2004-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"

NASA Technical Reports Server (NTRS)

Lauenstein, Jean-Marie

2015-01-01

The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.

The prevalence of musculoskeletal problems and risk factors among women assembly workers in the semiconductor industry.

PubMed

Chandrasakaran, A; Chee, H L; Rampal, K G; Tan, G L

2003-12-01

A cross-sectional study to determine work-related musculoskeletal problems and ergonomic risk factors was conducted among 529 women semiconductor workers. Overall, 83.4% had musculoskeletal symptoms in the last one year. Pain in the back (57.8%), lower leg (48.4%) and shoulder (44.8%) were the three most common musculoskeletal problems. Significant associations were found between prolonged standing and upper and lower leg pain, between prolonged sitting and neck and shoulder pain and between prolonged bending and shoulder arm, back and upper leg pain. The study therefore showed a clear association between work-related musculoskeletal pain and prolonged hours spent in particular postures and movements.

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

PubMed

Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

2015-08-12

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

Tailoring metal oxide nanoparticle dispersions for inkjet printing.

PubMed

Gebauer, J S; Mackert, V; Ognjanović, S; Winterer, M

2018-05-04

There is a growing interest in science and industry for printed electronics. Printed electronics enable the production of large quantities of electronic components at low cost. Even though organic semiconductors are already widely used for printed components, inorganic materials may be advantageous due to their higher durability and superior device performance. Nevertheless, inorganic materials still remain difficult to print making the development of printable and functional inks a necessity. In this work we present the formulation, inkjet printing and processing of newly developed inks based on ethylene glycol as dispersion medium. Different metal oxide nanoparticles (ZnO, TiO 2 , CuO, SnO 2 and In 2 O 3 ) with high crystallinity and narrow size distribution were produced by chemical vapor synthesis. The particles were stabilized and the colloidal stability was evaluated by a combination of DLVO simulations and dynamic light scattering measurements. Measurements of rheological and interfacial properties, like viscosity and surface tension, are used to determine the printability on the basis of the inverse Ohnesorge number. Inks, developed in this work, have adjustable rheological properties as well as long-term stabilities without particle sedimentation over a period of several months. They are suitable for printing on different substrate materials like silicon and flexible polymeric substrates. Copyright © 2018 Elsevier Inc. All rights reserved.

Wafer-level micro-optics: trends in manufacturing, testing, packaging, and applications

NASA Astrophysics Data System (ADS)

Voelkel, Reinhard; Gong, Li; Rieck, Juergen; Zheng, Alan

2012-11-01

Micro-optics is an indispensable key enabling technology (KET) for many products and applications today. Probably the most prestigious examples are the diffractive light shaping elements used in high-end DUV lithography steppers. Highly efficient refractive and diffractive micro-optical elements are used for precise beam and pupil shaping. Micro-optics had a major impact on the reduction of aberrations and diffraction effects in projection lithography, allowing a resolution enhancement from 250 nm to 45 nm within the last decade. Micro-optics also plays a decisive role in medical devices (endoscopes, ophthalmology), in all laser-based devices and fiber communication networks (supercomputer, ROADM), bringing high-speed internet to our homes (FTTH). Even our modern smart phones contain a variety of micro-optical elements. For example, LED flashlight shaping elements, the secondary camera, and ambient light and proximity sensors. Wherever light is involved, micro-optics offers the chance to further miniaturize a device, to improve its performance, or to reduce manufacturing and packaging costs. Wafer-scale micro-optics fabrication is based on technology established by semiconductor industry. Thousands of components are fabricated in parallel on a wafer. We report on the state of the art in wafer-based manufacturing, testing, packaging and present examples and applications for micro-optical components and systems.

The health impacts of semiconductor production: an epidemiologic review

PubMed Central

Kim, Myoung-Hee; Kim, Hyunjoo; Paek, Domyung

2014-01-01

Background: Despite concerns over the harmful health effects of semiconductor production, epidemiological studies have shown mixed results. Objectives: We aim to critically appraise epidemiologic studies to date, and to suggest future research and actions to protect workers in semiconductor industry. Methods: Epidemiologic studies were identified through electronic database searches, review of reference lists of relevant published works, and expert consultations, and were narratively reviewed. Results: Most evidence suggests reproductive risks from fabrication jobs, including spontaneous abortion (SAB), congenital malformation, and reduced fertility. Although chemicals have been suspected as causal agents, knowledge of the likely contribution(s) from specific exposures is still limited. Evidence of cancer risk seems to be equivocal. However, the available studies had serious limitations including healthy worker effects (HWEs), information bias, and insufficient power, all of which are associated with underestimation. Nevertheless, excess risks for non-Hodgkin's lymphoma (NHL), leukemia, brain tumor, and breast cancer were observed. Conclusions: Monitoring and innovative research based on international collaboration with a focus on sentinel events are required. PMID:24999845

Rapid reagent-less on-line H2O2 quantification in alkaline semiconductor etching solution, Part 2: Nephelometry application.

PubMed

Zlatev, Roumen; Stoytcheva, Margarita; Valdez, Benjamin

2018-03-01

A simple and rapid reagent less nephelometric method for on-line H 2 O 2 quantification in semiconductors etching solutions was developed, optimized, characterized and validated. The intensity of the light scattered by the oxygen gas suspension resulted from H 2 O 2 catalytic decomposition by immobilized MnO 2 was registered as analytical response. The influences of the light wave length, the agitation rate, the temperature and the catalyst surface area on the response amplitude were studied and optimization was done. The achieved linear concentration range from 10 to 150mmolL -1 at 0.9835 calibration curve correlation coefficient, precision from 3.65% to 0.95% and response time from 35 to 20s respectively, at sensitivity of 8.01µAmmol -1 L and LOD of 2.9mmolL -1 completely satisfy the semiconductor industry requirements. Copyright © 2017 Elsevier B.V. All rights reserved.

The health impacts of semiconductor production: an epidemiologic review.

PubMed

Kim, Myoung-Hee; Kim, Hyunjoo; Paek, Domyung

2014-01-01

Despite concerns over the harmful health effects of semiconductor production, epidemiological studies have shown mixed results. We aim to critically appraise epidemiologic studies to date, and to suggest future research and actions to protect workers in semiconductor industry. Epidemiologic studies were identified through electronic database searches, review of reference lists of relevant published works, and expert consultations, and were narratively reviewed. Most evidence suggests reproductive risks from fabrication jobs, including spontaneous abortion (SAB), congenital malformation, and reduced fertility. Although chemicals have been suspected as causal agents, knowledge of the likely contribution(s) from specific exposures is still limited. Evidence of cancer risk seems to be equivocal. However, the available studies had serious limitations including healthy worker effects (HWEs), information bias, and insufficient power, all of which are associated with underestimation. Nevertheless, excess risks for non-Hodgkin's lymphoma (NHL), leukemia, brain tumor, and breast cancer were observed. Monitoring and innovative research based on international collaboration with a focus on sentinel events are required.

Narrow-linewidth tunable laser working at 633 nm suitable for industrial interferometry

NASA Astrophysics Data System (ADS)

Minh, Tuan Pham; Hucl, Václav; Čížek, Martin; Mikel, Břetislav; Hrabina, Jan; Řeřucha, Šimon; Číp, Ondřej; Lazar, Josef

2015-05-01

Semiconductor lasers found a foothold in many fields of human activities, mainly thanks to its small size, low cost and high energy efficiency. Recent methods for accurate distance measurement in industrial practice use principles of laser interferometry, which are based on lasers operating in the visible spectrum. When the laser beam is visible the alignment of the industrial interferometer makes the measuring process easier. Traditional lasers for these purposes for many decades - HeNe gas laser - have superb coherence properties but small tunable range. On the other hand laser diodes are very useful lasers but only if the active layer of the semiconductor equips with a passive selective element that will increase the quality of their own resonator and also prevents the structure of its higher longitudinal modes. The main aim of the work is a design of the laser source based on a new commercial available laser diode with Distributed Bragg Reflector structure, butterfly package and fibre coupled output. The ultra-low noise injection current source, stable temperature controller and supply electronic equipment were developed with us and experimentally tested with this laser for the best performances required of the industrial interferometry field. The work also performs a setup for frequency noise properties investigation with an unbalanced fibre based Mach-Zehnder interferometer and 10 m long fibre spool inserted in the reference arm. The work presents the way to developing the narrow-linewidth operation the DBR laser with the wide tunable range up to more than 1 nm of the operation wavelength at the same time. Both capabilities predetermine this complex setup for the industrial interferometry application as they are the long distance surveying or absolute scale interferometry.

A Solder Based Self Assembly Project in an Introductory IC Fabrication Course

ERIC Educational Resources Information Center

Rao, Madhav; Lusth, John C.; Burkett, Susan L.

2015-01-01

Integrated circuit (IC) fabrication principles is an elective course in a senior undergraduate and early graduate student's curriculum. Over the years, the semiconductor industry relies heavily on students with developed expertise in the area of fabrication techniques, learned in an IC fabrication theory and laboratory course. The theory course…

Functional organic materials for electronics industries

NASA Technical Reports Server (NTRS)

Shibayama, K.; Ono, H.

1982-01-01

Topics closely related with organic, high molecular weight material synthesis are discussed. These are related to applications such as display, recording, sensors, semiconductors, and I.C. correlation. New materials are also discussed. General principles of individual application are not included. Materials discussed include color, electrochromic, thermal recording, organic photoconductors for electrophotography, and photochromic materials.

Random-modulation differential absorption lidar based on semiconductor lasers and single photon counting for atmospheric CO2 sensing

NASA Astrophysics Data System (ADS)

Quatrevalet, M.; Ai, X.; Pérez-Serrano, A.; Adamiec, P.; Barbero, J.; Fix, A.; Rarity, J. G.; Ehret, G.; Esquivias, I.

2017-09-01

Carbon dioxide (CO2) is the major anthropogenic greenhouse gas contributing to global warming and climate change. Its concentration has recently reached the 400-ppm mark, representing a more than 40 % increase with respect to its level prior to the industrial revolution.

Lower Merrimack Valley Workplace Education Project. Final Report.

ERIC Educational Resources Information Center

Norris, Cynthia Zylkuski; Breen, Patricia K.

A description is provided of the Lower Merrimack Valley Workplace Education Project (WEP), an educational project that offers English-as-a-Second-Language (ESL) and job-specific education classes to hourly employees in the Semiconductor Division of Alpha Industries. The challenge of the project was to create a WEP that could accommodate the…

Atmospheric perfluorocarbons.

PubMed

Aslam, M; Khalil, K; Rasmussen, Reinhold A; Culbertson, John A; Prins, John M; Grimsrud, Eric P; Shearer, Martha J

2003-10-01

Collectively, man-made emissions of a few greenhouse gases may cause about the same amount of global warming as increasing carbon dioxide. Among the most potent of these non-CO2 greenhouse gases are the perfluorocarbons that have extraordinarily long atmospheric lifetimes of 10,000 to more than 50,000 yr. We report atmospheric concentrations over two decades, between 1978 and 1997, of the three most abundant perfluorocarbons--CF4, C2F6, and C3F8--and delineate the sources that account for the present abundances and trends. We show that C2F6 and C3F8 are present at only 2.9 and 0.2 pptv, respectively. CF4 is the most abundant perfluorocarbon at 74 pptv (in 1997) of which about 40 pptv are from natural emissions, 33 pptv from aluminum manufacturing, and 1 pptv from the semiconductor industry. The increasing trend of CF4 has slowed in recent years due to the major reductions in the emission rate per ton of aluminum produced. The effect of the falling emission factor is partially offset by increased production and increasing use by the semiconductor industry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reents, W.D. Jr.

Particles present in the environment have significant affects in many areas from personal health due to atmospheric particles to various industrial processes that can be ruined due to particulate contamination such as semiconductor device manufacture and manufacture of sterile health products. The ability to detect deleterious contamination requires appropriate instrumentation to detect these particles. To prevent such contamination, the particle source must be identified by determining the composition of the offending particles. In a controlled environment, particle contamination often occurs in transients. In order to identify unknown particles, a technique must obtain compositional and size information regardless of particle identity,more » and perform this analysis in real-time so as to separate {open_quotes}background{close_quotes} particles from those produced in the transient event. Since processes are sensitive to certain particle size regimes and possibly, compositions, the instrumentation must be designed with these needs in mind. The authors have developed an instrument, the Ultra-Sensitive Particle Analysis System (USPAS) for situations where ultrafine particles, down to 0.002 micron, are of concern, such as the semiconductor manufacturing industry and the ambient environment.« less

Throwing computing into reverse

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frank, Michael P.

For more than 50 years, computers have made steady and dramatic improvements, all thanks to Moore’s Law—the exponential increase over time in the number of transistors that can be fabricated on an integrated circuit of a given size. Moore’s Law owed its success to the fact that as transistors were made smaller, they became simultaneously cheaper, faster, and more energy efficient. The payoff from this win-win-win scenario enabled reinvestment in semiconductor fabrication technology that could make even smaller, more densely-packed transistors. And so this virtuous cycle continued, decade after decade. Now though, experts in industry, academia, and government laboratories anticipatemore » that semiconductor miniaturization won’t continue much longer—maybe 10 years or so, at best. Making transistors smaller no longer yields the improvements it used to. The physical characteristics of small transistors forced clock speeds to cease getting faster more than a decade ago, which drove the industry to start building chips with multiple cores. But even multi-core architectures must contend with increasing amounts of “dark silicon,” areas of the chip that must be powered off to avoid overheating.« less

Hexamethyldisilazane Removal with Mesoporous Materials Prepared from Calcium Fluoride Sludge.

PubMed

Kao, Ching-Yang; Lin, Min-Fa; Nguyen, Nhat-Thien; Tsai, Hsiao-Hsin; Chang, Luh-Maan; Chen, Po-Han; Chang, Chang-Tang

2018-05-01

A large amount of calcium fluoride sludge is generated by the semiconductor industry every year. It also requires a high amount of fuel consumption using rotor concentrators and thermal oxidizers to treat VOCs. The mesoporous adsorbent prepared by calcium fluoride sludge was used for VOCs treatment. The semiconductor industry employs HMDS to promote the adhesion of photo-resistant material to oxide(s) due to the formation of silicon dioxide, which blocks porous adsorbents. The adsorption of HMDS (Hexamethyldisiloxane) was tested with mesoporous silica materials synthesized from calcium fluoride (CF-MCM). The resulting samples were characterized by XRD, XRF, FTIR, N2-adsorption-desorption techniques. The prepared samples possessed high specific surface area, large pore volume and large pore diameter. The crystal patterns of CF-MCM were similar with Mobil composite matter (MCM-41) from TEM image. The adsorption capacity of HMDS with CF-MCM was 40 and 80 mg g-1, respectively, under 100 and 500 ppm HMDS. The effects of operation parameters, such as contact time and mixture concentration, on the performance of CF-MCM were also discussed in this study.

The ATHENA optics development

NASA Astrophysics Data System (ADS)

Bavdaz, Marcos; Wille, Eric; Shortt, Brian; Fransen, Sebastiaan; Collon, Maximilien; Barriere, Nicolas; Yanson, Alexei; Vacanti, Giuseppe; Haneveld, Jeroen; van Baren, Coen; Zuknik, Karl-Heinz; Christensen, Finn; Della Monica Ferreira, Desiree; Krumrey, Michael; Burwitz, Vadim; Pareschi, Giovanni; Spiga, Daniele; Valsecchi, Giuseppe; Vernani, Dervis

2016-07-01

ATHENA (Advanced Telescope for High ENergy Astrophysics) is being studied by the European Space Agency (ESA) as the second large science mission, with a launch slot in 2028. System studies and technology preparation activities are on-going. The optics of the telescope is based on the modular Silicon Pore Optics (SPO), a novel X-ray optics technology significantly benefiting from spin-in from the semiconductor industry. Several technology development activities are being implemented by ESA in collaboration with European industry and institutions. The related programmatic background, technology development approach and the associated implementation planning are presented.

Applying Physics: Opportunities in Semiconductor Technology Companies

NASA Astrophysics Data System (ADS)

Redinbo, Greg

2011-03-01

While many physicists practice in university settings, physics skills can also be applied outside the traditional academic track. ~Identifying these opportunities requires a clear understanding of how your physics training can be used in an industrial setting, understanding what challenges technology companies face, and identifying how your problem solving skills can be broadly applied in technology companies. ~In this talk I will highlight the common features of such companies, discuss what specific skills are useful for an industrial physicist, and explain roles (possibly unfamiliar) that may be available to you.

Panel Speaker 3

NASA Astrophysics Data System (ADS)

Doering, Robert

2014-03-01

Profitable products are frequently enabled by innovations that prevent early commoditization. At its best, industrial physics research provides the key differentiators for such products. To fulfill this goal, it's necessary to establish effective working relationships between R&D staff with both physics and engineering backgrounds. In the semiconductor industry, the ``middle ground'' is often materials science, electromagnetics, or a wide range of phenomena useful for creating sensors. In this brief presentation, we will mention a few examples of such collaborative development at Texas Instruments, including MEMS devices, ferroelectric memory, and silicon-IC-based radar.

One-shot multivibrator with complementary metal-oxide-semiconductor components

NASA Technical Reports Server (NTRS)

Oneill, R. W.

1970-01-01

Breadboard model is tuned to produce output pulses from one microsecond up to several seconds in width with up to 95 percent duty cycle, and with lower power consumption than previously existing circuits.

Advanced Electrical Materials and Component Development

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2003-01-01

The primary means to develop advanced electrical components is to develop new and improved materials for magnetic components (transformers, inductors, etc.), capacitors, and semiconductor switches and diodes. This paper will give a description and status of the internal and external research sponsored by NASA Glenn Research Center on soft magnetic materials, dielectric materials and capacitors, and high quality silicon carbide (SiC) atomically smooth substrates. The rationale for and the benefits of developing advanced electrical materials and components for the PMAD subsystem and also for the total power system will be briefly discussed.

Microwave components for cellular portable radiotelephone

NASA Astrophysics Data System (ADS)

Muraguchi, Masahiro; Aikawa, Masayoshi

1995-09-01

Mobile and personal communication systems are expected to represent a huge market for microwave components in the coming years. A number of components in silicon bipolar, silicon Bi-CMOS, GaAs MESFET, HBT and HEMT are now becoming available for system application. There are tradeoffs among the competing technologies with regard to performance, cost, reliability and time-to-market. This paper describes process selection and requirements of cost and r.f. performances to microwave semiconductor components for digital cellular and cordless telephones. Furthermore, new circuit techniques which were developed by NTT are presented.

Semiconductor solar cells: Recent progress in terrestrial applications

NASA Astrophysics Data System (ADS)

Avrutin, V.; Izyumskaya, N.; Morkoç, H.

2011-04-01

In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year. Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon wafers comprise more than 80% of the market. Bulk Si photovoltaics, which benefit from the highly advanced growth and fabrication processes developed for microelectronics industry, is a mature technology. The light-to-electric power conversion efficiency of the best modules offered on the market is over 20%. While there is still room for improvement, the device performance is approaching the thermodynamic limit of ˜28% for single-junction Si solar cells. The major challenge that the bulk Si solar cells face is, however, the cost reduction. The potential for price reduction of electrical power generated by wafer-based Si modules is limited by the cost of bulk Si wafers, making the electrical power cost substantially higher than that generated by combustion of fossil fuels. One major strategy to bring down the cost of electricity generated by photovoltaic modules is thin-film solar cells, whose production does not require expensive semiconductor substrates and very high temperatures and thus allows decreasing the cost per unit area while retaining a reasonable efficiency. Thin-film solar cells based on amorphous, microcrystalline, and polycrystalline Si as well as cadmium telluride and copper indium diselenide compound semiconductors have already proved their commercial viability and their market share is increasing rapidly. Another avenue to reduce the cost of photovoltaic electricity is to increase the cell efficiency beyond the Shockley-Queisser limit. A variety of concepts proposed along this avenue forms the basis of the so-called third generation photovoltaics technologies. Among these approaches, high-efficiency multi-junction solar cells based on III-V compound semiconductors, which initially found uses in space applications, are now being developed for terrestrial applications. In this article, we discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells.

Cancer Mortality and Incidence in Korean Semiconductor Workers

PubMed Central

Lee, Hye-Eun; Park, Jungsun; Kang, Seong-Kyu

2011-01-01

Objectives The purpose of this study was to evaluate cancer risks in the Korean semiconductor industry. Methods A retrospective cohort study was performed in eight semiconductor factories between 1998 and 2008. The number of subjects was 113,443 for mortality and 108,443 for incidence. Standardized mortality ratios (SMR) and standardized incidence ratios (SIR) were calculated. Results The SMR of leukemia was 0.39 (95% Confidence Interval 0.08-1.14) in males (2 cases) and 1.37 (0.55-2.81) in females (7 cases). The SMR of non-Hodgkin's lymphoma (NHL) was 1.33 (0.43-3.09, 5 cases) in males and 2.5 (0.68-6.40, 4 cases) in females. The SIR of leukemia was 0.69 (0.30-1.37, 8 cases) in males and 1.28 (0.61-2.36, 10 cases) in females. The SIR of NHL in females was 2.31 (1.23-3.95, 13 cases) and that of thyroid cancer in males was 2.11 (1.49-2.89, 38 cases). The excess incidence of NHL was significant in female assembly operators [SIR=3.15 (1.02-7.36, 5 cases)], but not significant in fabrication workers. The SIR of NHL in the group working for 1-5 years was higher than the SIR of NHL for those working for more than five years. The excess incidence of male thyroid cancer was observed in both office and manufacturing workers. Conclusion There was no significant increase of leukemia in the Korean semiconductor industry. However, the incidence of NHL in females and thyroid cancer in males were significantly increased even though there was no definite association between work and those diseases in subgroup analysis according to work duration. This result should be interpreted cautiously, because the majority of the cohort was young and the number of cases was small. PMID:22953196

Cancer mortality and incidence in korean semiconductor workers.

PubMed

Lee, Hye-Eun; Kim, Eun-A; Park, Jungsun; Kang, Seong-Kyu

2011-06-01

The purpose of this study was to evaluate cancer risks in the Korean semiconductor industry. A retrospective cohort study was performed in eight semiconductor factories between 1998 and 2008. The number of subjects was 113,443 for mortality and 108,443 for incidence. Standardized mortality ratios (SMR) and standardized incidence ratios (SIR) were calculated. The SMR of leukemia was 0.39 (95% Confidence Interval 0.08-1.14) in males (2 cases) and 1.37 (0.55-2.81) in females (7 cases). The SMR of non-Hodgkin's lymphoma (NHL) was 1.33 (0.43-3.09, 5 cases) in males and 2.5 (0.68-6.40, 4 cases) in females. The SIR of leukemia was 0.69 (0.30-1.37, 8 cases) in males and 1.28 (0.61-2.36, 10 cases) in females. The SIR of NHL in females was 2.31 (1.23-3.95, 13 cases) and that of thyroid cancer in males was 2.11 (1.49-2.89, 38 cases). The excess incidence of NHL was significant in female assembly operators [SIR=3.15 (1.02-7.36, 5 cases)], but not significant in fabrication workers. The SIR of NHL in the group working for 1-5 years was higher than the SIR of NHL for those working for more than five years. The excess incidence of male thyroid cancer was observed in both office and manufacturing workers. There was no significant increase of leukemia in the Korean semiconductor industry. However, the incidence of NHL in females and thyroid cancer in males were significantly increased even though there was no definite association between work and those diseases in subgroup analysis according to work duration. This result should be interpreted cautiously, because the majority of the cohort was young and the number of cases was small.

High throughput web inspection system using time-stretch real-time imaging

NASA Astrophysics Data System (ADS)

Kim, Chanju

Photonic time-stretch is a novel technology that enables capturing of fast, rare and non-repetitive events. Therefore, it operates in real-time with ability to record over long period of time while having fine temporal resolution. The powerful property of photonic time-stretch has already been employed in various fields of application such as analog-to-digital conversion, spectroscopy, laser scanner and microscopy. Further expanding the scope, we fully exploit the time-stretch technology to demonstrate a high throughput web inspection system. Web inspection, namely surface inspection is a nondestructive evaluation method which is crucial for semiconductor wafer and thin film production. We successfully report a dark-field web inspection system with line scan speed of 90.9 MHz which is up to 1000 times faster than conventional inspection instruments. The manufacturing of high quality semiconductor wafer and thin film may directly benefit from this technology as it can easily locate defects with area of less than 10 microm x 10 microm where it allows maximum web flow speed of 1.8 km/s. The thesis provides an overview of our web inspection technique, followed by description of the photonic time-stretch technique which is the keystone in our system. A detailed explanation of each component is covered to provide quantitative understanding of the system. Finally, imaging results from a hard-disk sample and flexible films are presented along with performance analysis of the system. This project was the first application of time-stretch to industrial inspection, and was conducted under financial support and with close involvement by Hitachi, Ltd.

Determining the Concentrations and Temperatures of Products in a CF_4/CHF_3/N_2 Plasma via Submillimeter Absorption Spectroscopy

NASA Astrophysics Data System (ADS)

Helal, Yaser H.; Neese, Christopher F.; De Lucia, Frank C.; Ewing, Paul R.; Agarwal, Ankur; Craver, Barry; Stout, Phillip J.; Armacost, Michael D.

2017-06-01

Plasmas used for the manufacturing of semiconductor devices are similar in pressure and temperature to those used in the laboratory for the study of astrophysical species in the submillimeter (SMM) spectral region. The methods and technology developed in the SMM for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied and their spectra have been cataloged or are in the literature. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500-750 GHz radiation through a commercial inductively coupled plasma chamber. The measurement of transmission spectra was simultaneously fit for background and absorption signal. The measured absorption was used to calculate absolute densities and temperatures of polar species. Measurements for CHF_3, CF_2, FCN, HCN, and CN made in a CF_4/CHF_3/N_2 plasma will be presented. Temperature equilibrium among species will be shown and the common temperature is leveraged to obtain accurate density measurements for simultaneously observed species. The densities and temperatures of plasma species are studied as a function of plasma parameters, including flow rate, pressure, and discharge power.

Integrated InAs/InP quantum-dot coherence comb lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lu, Zhenguo; Liu, Jiaren; Poole, Philip J.; Song, Chun-Ying; Webber, John; Mao, Linda; Chang, Shoude; Ding, Heping; Barrios, Pedro J.; Poitras, Daniel; Janz, Siegfried

2017-02-01

Current communication networks needs to keep up with the exponential growth of today's internet traffic, and telecommunications industry is looking for radically new integrated photonics components for new generation optical networks. We at National Research Council (NRC) Canada have successfully developed nanostructure InAs/InP quantum dot (QD) coherence comb lasers (CCLs) around 1.55 μm. Unlike uniform semiconductor layers in most telecommunication lasers, in these QD CCLs light is emitted and amplified by millions of semiconductor QDs less than 60 nm in diameter. Each QD acts like an isolated light source acting independently of its neighbours, and each QD emits light at its own unique wavelength. The end result is a QD CCL is more stable and has ultra-low timing jitter. But most importantly, a single QD CCL can simultaneously produce 50 or more separate laser beams at distinct wavelengths over the telecommunications C-band. Utilizing those unique properties we have put considerable effort well to design, grow and fabricate InAs/InP QD gain materials. After our integrated packaging and using electrical feedback-loop control systems, we have successfully demonstrated ultra-low intensity and phase noise, frequency-stabilized integrated QD CCLs with the repetition rates from 10 GHz to 100 GHz and the total output power up to 60 mW at room temperature. We have investigated their relative intensity noises, phase noises, RF beating signals and other performance of both filtered individual channel and the whole CCLs. Those highly phase-coherence comb lasers are the promising candidates for flexible bandwidth terabit coherent optical networks and signal processing applications.

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

NASA Astrophysics Data System (ADS)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics.

PubMed

Wang, Binghao; Huang, Wei; Chi, Lifeng; Al-Hashimi, Mohammed; Marks, Tobin J; Facchetti, Antonio

2018-05-22

Recent advances in flexible and stretchable electronics (FSE), a technology diverging from the conventional rigid silicon technology, have stimulated fundamental scientific and technological research efforts. FSE aims at enabling disruptive applications such as flexible displays, wearable sensors, printed RFID tags on packaging, electronics on skin/organs, and Internet-of-things as well as possibly reducing the cost of electronic device fabrication. Thus, the key materials components of electronics, the semiconductor, the dielectric, and the conductor as well as the passive (substrate, planarization, passivation, and encapsulation layers) must exhibit electrical performance and mechanical properties compatible with FSE components and products. In this review, we summarize and analyze recent advances in materials concepts as well as in thin-film fabrication techniques for high- k (or high-capacitance) gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductors. Since thin-film transistors (TFTs) are the key enablers of FSE devices, we discuss TFT structures and operation mechanisms after a discussion on the needs and general requirements of gate dielectrics. Also, the advantages of high- k dielectrics over low- k ones in TFT applications were elaborated. Next, after presenting the design and properties of high- k polymers and inorganic, electrolyte, and hybrid dielectric families, we focus on the most important fabrication methodologies for their deposition as TFT gate dielectric thin films. Furthermore, we provide a detailed summary of recent progress in performance of FSE TFTs based on these high- k dielectrics, focusing primarily on emerging semiconductor types. Finally, we conclude with an outlook and challenges section.

Insulated InP (100) semiconductor by nano nucleus generation in pure water

NASA Astrophysics Data System (ADS)

Ghorab, Farzaneh; Es'haghi, Zarrin

2018-01-01

Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

MEDEA+ project 2T302 MUSCLE: masks through user's supply chain: leadership by excellence

NASA Astrophysics Data System (ADS)

Torsy, Andreas

2008-04-01

The rapid evolution of our information society depends on the continuous developments and innovations of semiconductor products. The cost per chip functionality keeps reducing by a factor of 2 every 18 month. However, this performance and success of the semiconductor industry critically depends on the quality of the lithographic photomasks. The need for the high quality of photomask drives lithography costs sensitively, which is a key factor in the manufacture of microelectronics devices. Therefore, the aim is to reduce production costs while overcoming challenges in terms of feature sizes, complexity and cycle times. Consequently, lithography processes must provide highest possible quality at reasonable prices. This way, the leadership in the lithographic area can be maintained and European chipmakers can stay competitive with manufacturers in the Far East and the USA. Under the umbrella of MEDEA+, a project called MUSCLE (<< Masks through User's Supply Chain: Leadership by Excellence >>) has been started among leading semiconductor companies in Europe: ALTIS Semiconductor (Project Leader), ALCATEL Vacuum, ATMEL, CEA/LETI, Entegris, NXP Semiconductors, TOPPAN Photomasks, AMTC, Carl ZEISS SMS, DMS, Infineon Technologies, VISTEC Semiconductor, NIKON Precision, SCHOTT Lithotec, ASML, PHOTRONICS, IMEC, DCE, DNP Photomask, STMicroelectronics, XYALIS and iCADA. MUSCLE focuses particularly on mask data flow, photomask carrier, photomask defect characterization and photomask data handling. In this paper, we will discuss potential solutions like standardization and automation of the photomask data flow based on SEMI P10, the performance and the impact of the supply chain parameter within the photomask process, the standardization of photomask defect characterization and a discussion of the impact of new Reticle Enhancement Technologies (RET) such as mask process correction and finally a generic model to describe the photomasks key performance indicators for prototype photomasks.

Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swain, Basudev, E-mail: Swain@iae.re.kr; Mishra, Chinmayee; Lee, Chan Gi

2015-07-15

Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leachmore » residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.« less

Hybrid semiconductor fiber lasers for telecommunications

NASA Astrophysics Data System (ADS)

Khalili, Alireza

2006-12-01

Highly stable edge emitting semiconductor lasers are of utmost importance in most telecommunications applications where high-speed data transmission sets strict limits on the purity of the laser signal. Unfortunately, most edge emitting semiconductor lasers, unlike gaseous or solid-state laser sources, operate with many closely spaced axial modes, which accounts for the observed instability and large spikes in the output spectrum of such lasers. Consequently, in most telecom applications distributed feedback (DFB) or distributed Bragg reflector (DBR) techniques are used to ensure stability and single-frequency operation, further adding to the cost and complexity of such lasers. Additionally, coupling of the highly elliptical output beam of these lasers to singlemode fibers complicates the packaging procedure and sub-micron alignment of various optical components is often necessary. Utilizing the evanescent coupling between a semiconductor antiresonant reflecting optical waveguide (ARROW) and a side polished fiber, this thesis presents an alternative side-coupled laser module that eliminates the need for the cumbersome multi-component alignment processes of conventional laser packages, and creates an inherent mode selection mechanism that guarantees singlemode radiation into the fiber without any gratings. We have been able to demonstrate the first side-coupled fiber semiconductor laser in this technology, coupling more than 3mW of power at 850nm directly into a 5/125mum singlemode fiber. This mixed-cavity architecture yields a high thermal stability (˜0.06nm/°C), and negligible spectral spikes are observed. Theoretical background and simulation results, as well as several supplementary materials are also presented to further rationalize the experimental data. A side-coupled light-emitter and pre-amplifier are also proposed and discussed. We also study different architectures for attaining higher efficiency, higher output power, and wavelength tunability in such lasers. Finally, we discuss possible venues for integration of these side-coupled devices in a telecommunication system. Approved for publication.

Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simon, F.-G., E-mail: franz-georg.simon@bam.de; Holm, O.; Berger, W.

2013-04-15

Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stockmore » and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources.« less

Effect of occupational safety measures on micronucleus frequency in semiconductor workers.

PubMed

Winker, Robert; Roos, Gerhard; Pilger, Alexander; Rüdiger, Hugo W

2008-02-01

To examine whether semiconductor workers exposed to complex mixtures of chemical waste show an increase in genotoxic effects, and, if so, whether occupational safety measures protect these workers. To assess chemical exposure in the workplace, air monitoring of boron trifluoride and boron trichloride was performed and urinary concentrations of fluoride were measured. The cytokinesis-block micronucleus test on isolated lymphocytes was used for the detection of genotoxic effects. Two series of monitoring have been performed in order to assess the effect of implemented protection measures. We found a significantly higher mean frequency of micronuclei in exposed workers than in controls, whereas air monitoring and measurement of urinary fluoride failed to detect chemical exposure of these workers. Twelve years after implementation of protective measures, the mean level of micronuclei in exposed individuals was found to be as low as those from controls. These findings indicate that exposed workers in the semiconductor industry may have an increased risk of genotoxic effects from complex mixtures of chemical waste products. The decline of the mean level of micronuclei in exposed workers down to the base level of controls after implementation of protective measures points to the significance of adequate safety standards to protect against chromosomal damage in semiconductor personnel.

Spatially selective assembly of quantum dot light emitters in an LED using engineered peptides.

PubMed

Demir, Hilmi Volkan; Seker, Urartu Ozgur Safak; Zengin, Gulis; Mutlugun, Evren; Sari, Emre; Tamerler, Candan; Sarikaya, Mehmet

2011-04-26

Semiconductor nanocrystal quantum dots are utilized in numerous applications in nano- and biotechnology. In device applications, where several different material components are involved, quantum dots typically need to be assembled at explicit locations for enhanced functionality. Conventional approaches cannot meet these requirements where assembly of nanocrystals is usually material-nonspecific, thereby limiting the control of their spatial distribution. Here we demonstrate directed self-assembly of quantum dot emitters at material-specific locations in a color-conversion LED containing several material components including a metal, a dielectric, and a semiconductor. We achieve a spatially selective immobilization of quantum dot emitters by using the unique material selectivity characteristics provided by the engineered solid-binding peptides as smart linkers. Peptide-decorated quantum dots exhibited several orders of magnitude higher photoluminescence compared to the control groups, thus, potentially opening up novel ways to advance these photonic platforms in applications ranging from chemical to biodetection.

An evaluation of radiation damage to solid state components flown in low earth orbit satellites.

PubMed

Shin, Myung-Won; Kim, Myung-Hyun

2004-01-01

The effects of total ionising radiation dose upon commercial off-the-shelf semiconductors fitted to satellites operating in low Earth orbit (LEO) conditions was evaluated. The evaluation was performed for the Korea Institute of Technology SATellite-1, (KITSAT-1) which was equipped with commercial solid state components. Two approximate calculation models for space radiation shielding were developed. Verification was performed by comparing the results with detailed three-dimensional calculations using the Monte-Carlo method and measured data from KITSAT-1. It was confirmed that the developed approximate models were reliable for satellite shielding calculations. It was also found that commercial semiconductor devices, which were not radiation hardened, could be damaged within their lifetime due to the total ionising dose they are subject to in the LEO environment. To conclude, an intensive shielding analysis should be considered when commercial devices are used.

Component technology for space power systems

NASA Technical Reports Server (NTRS)

Finke, R.

1982-01-01

The Lewis/OAST program for the development of Component Technology for Space Power Systems is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and thermal control devices. Examples of progress in each of the five areas is discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 mu sec rise and fall time are presented. A new class of semiconductor devices with a possibility of switching 1000 000 V is described. Several 100 kW rotary power transformer designs and a 25 kW, 20 kHz transformer weighting 3.2 kg have been developed. Progress on the creation of diamond-like films for thermal devices and intercalated carbon fibers with the strength of steel and the conductivity of copper at one third the mass of copper is presented.

Optics Communications: Special issue on Polymer Photonics and Its Applications

NASA Astrophysics Data System (ADS)

Zhang, Ziyang; Pitwon, Richard C. A.; Feng, Jing

2016-03-01

In the last decade polymer photonics has witnessed a tremendous boost in research efforts and practical applications. Polymer materials can be engineered to exhibit unique optical and electrical properties. Extremely transparent and reliable passive optical polymers have been made commercially available and paved the ground for the development of various waveguide components. Advancement in the research activities regarding the synthesis of active polymers has enabled devices such as ultra-fast electro-optic modulators, efficient white light emitting diodes, broadband solar cells, flexible displays, and so on. The fabrication technology is not only fast and cost-effective, but also provides flexibility and broad compatibility with other semiconductor processing technologies. Reports show that polymers have been integrated in photonic platforms such as silicon-on-insulator (SOI), III-V semiconductors, and silica PLCs, and vice versa, photonic components made from a multitude of materials have been integrated, in a heterogeneous/hybrid manner, in polymer photonic platforms.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

PubMed

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-05-02

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors

PubMed Central

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-01-01

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components. PMID:28468324

Recent development of radiation measurement instrument for industrial and medical applications

NASA Astrophysics Data System (ADS)

Baba, Sueki; Ohmori, Koichi; Mito, Yoshio; Tanoue, Toshiya; Yano, Shigeki; Tokumori, Kenji; Toyofuku, Fukai; Kanda, Shigenobu

2001-02-01

Recently, computer imaging technology has developed very high-quality image and fast processing time. X-rays have been used for many purposes such as medical diagnosis and analyzing the structure of industrial materials. However, as X-rays are hazardous to the human body, it is desirable to reduce its exposed dose to a minimum. For this purpose, it is necessary to use a semiconductor radiation detector with a high efficiency for X-rays. We have developed photon-counting CdTe array detector system for medical and industrial use. The bone densitometer for Dual Energy X-ray Absorptometry (DEXA) has been developed to make diagnosis of osteoporosis, and it is developed to analyze a material element for industrial use. Recently, we have developed a monochromatic X-ray CT using a 256 ch CdTe array detector. We found that the array detector systems are very useful for medical and industrial applications.

The National Si-Soft Project

NASA Astrophysics Data System (ADS)

Chang, Chun-Yen; Trappey, Charles V.

2003-06-01

Taiwan's electronics industry emerged in the 1960s with the creation of a small but well planned integrated circuit (IC) packaging industry. This industry investment led to bolder investments in research, laboratories, and the island's first semiconductor foundries in the 1980s. Following the success of the emerging IC manufacturers and design houses, hundreds of service firms and related industries (software, legal services, substrate, chemical, and test firms among others) opened for business and completed Taiwan's IC manufacturing supply chain. The challenge for Taiwan's electronics industry is to take the lead in the design, manufacture, and marketing of name brand electronic products. This paper introduces the Si-Soft (silicon software) Project, a national initiative that builds on Taiwan's achievements in manufacturing (referred to as Si-Hard or silicon hardware) to launch a new wave of companies. These firms will contribute to the core underlying technology (intellectual property) used in the creation of electronic products.

Integrated Imaging and Vision Techniques for Industrial Inspection: A Special Issue on Machine Vision and Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zheng; Ukida, H.; Ramuhalli, Pradeep

2010-06-05

Imaging- and vision-based techniques play an important role in industrial inspection. The sophistication of the techniques assures high- quality performance of the manufacturing process through precise positioning, online monitoring, and real-time classification. Advanced systems incorporating multiple imaging and/or vision modalities provide robust solutions to complex situations and problems in industrial applications. A diverse range of industries, including aerospace, automotive, electronics, pharmaceutical, biomedical, semiconductor, and food/beverage, etc., have benefited from recent advances in multi-modal imaging, data fusion, and computer vision technologies. Many of the open problems in this context are in the general area of image analysis methodologies (preferably in anmore » automated fashion). This editorial article introduces a special issue of this journal highlighting recent advances and demonstrating the successful applications of integrated imaging and vision technologies in industrial inspection.« less

Components of sustainability considerations in management of petrochemical industries.

PubMed

Aryanasl, Amir; Ghodousi, Jamal; Arjmandi, Reza; Mansouri, Nabiollah

2017-06-01

Sustainability comprises three pillars of social, environmental, and economic aspects. Petrochemical industry has a great inter-related complex impact on social and economic development of societies and adverse impact on almost all environmental aspects and resource depletion in many countries, which make sustainability a crucial issue for petrochemical industries. This study was conducted to propose components of sustainability considerations in management of petrochemical industries.A combination of exploratory study-to prepare a preliminary list of components of sustainable business in petrochemical industries based on review of literature and Delphi-to obtain experts' view on this preliminary list and provide a detailed list of components and sub-components that should be addressed to bring sustainability to petrochemical industries, were used.Two sets of components were provided. First general components, which include stakeholders (staffs, society, and environment) with four sub-components, financial resources with 11 sub-components, improvement of design and processes with nine sub-components, policy and strategy of cleaner production with seven sub-components and leadership with seven sub-components. The second operational components included raw material supply and preparation with five, synthesis with ten, product separation and refinement with nine, product handling and storage with five, emission abatement with eight, and improvement of technology and equipment with 16 sub-components.

Advanced excimer laser technologies enable green semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

2014-03-01

"Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

NASA Astrophysics Data System (ADS)

Hussain, Muhammad M.; Rojas, Jhonathan P.; Torres Sevilla, Galo A.

2013-05-01

Today's information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor - heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon - industry's darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%).

Development of laser technology in Poland: 2016

NASA Astrophysics Data System (ADS)

Jankiewicz, Zdzisław; Jabczyński, Jan K.; Romaniuk, Ryszard S.

2016-12-01

The paper is an introduction to the volume of proceedings and a concise digest of works presented during the XIth National Symposium on Laser Technology (SLT2016) [1]. The Symposium is organized since 1984 every three years [2-8]. SLT2016 was organized by the Institute of Optoelectronics, Military University of Technology (IO, WAT) [9], Warsaw, with cooperation of Warsaw University of Technology (WUT) [10], in Jastarnia on 27-30 September 2016. Symposium Proceedings are traditionally published by SPIE [11-19]. The meeting has gathered around 150 participants who presented around 120 research and technical papers. The Symposium, organized every 3 years is a good portrait of laser technology and laser applications development in Poland at university laboratories, governmental institutes, company R&D laboratories, etc. The SLT also presents the current technical projects under realization by the national research, development and industrial teams. Topical tracks of the Symposium, traditionally divided to two large areas - sources and applications, were: laser sources in near and medium infrared, picosecond and femtosecond lasers, optical fiber lasers and amplifiers, semiconductor lasers, high power and high energy lasers and their applications, new materials and components for laser technology, applications of laser technology in measurements, metrology and science, military applications of laser technology, laser applications in environment protection and remote detection of trace substances, laser applications in medicine and biomedical engineering, laser applications in industry, technologies and material engineering.

Economics of polysilicon processes

NASA Technical Reports Server (NTRS)

Yaws, C. L.; Li, K. Y.; Chou, S. M.

1986-01-01

Techniques are being developed to provide lower cost polysilicon material for solar cells. Existing technology which normally provides semiconductor industry polysilicon material is undergoing changes and also being used to provide polysilicon material for solar cells. Economics of new and existing technologies are presented for producing polysilicon. The economics are primarily based on the preliminary process design of a plant producing 1,000 metric tons/year of silicon. The polysilicon processes include: Siemen's process (hydrogen reduction of trichlorosilane); Union Carbide process (silane decomposition); and Hemlock Semiconductor process (hydrogen reduction of dichlorosilane). The economics include cost estimates of capital investment and product cost to produce polysilicon via the technology. Sensitivity analysis results are also presented to disclose the effect of major paramentes such as utilities, labor, raw materials and capital investment.

Moore's law, lithography, and how optics drive the semiconductor industry

NASA Astrophysics Data System (ADS)

Hutcheson, G. Dan

2018-03-01

When the subject of Moore's Law arises, the important role that lithography plays and how advances in optics have made it all possible is seldom brought up in the world outside of lithography itself. When lithography is mentioned up in the value chain, it's often a critique of how advances are coming too slow and getting far too expensive. Yet advances in lithography are at the core of how Moore's Law is viable. This presentation lays out how technology and the economics of optics in manufacturing interleave to drive the immense value that semiconductors have brought to the world by making it smarter. Continuing these advances will be critical as electronics make the move from smart to cognitive.

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2006-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Decreased oscillation threshold of a continuous-wave OPO using a semiconductor gain mirror.

PubMed

Siltanen, Mikael; Leinonen, Tomi; Halonen, Lauri

2011-09-26

We have constructed a singly resonant, continuous-wave optical parametric oscillator, where the signal beam resonates and is amplified by a semiconductor gain mirror. The gain mirror can significantly decrease the oscillation threshold compared to an identical system with conventional mirrors. The largest idler beam tuning range reached by changing the pump laser wavelength alone is from 3.6 to 4.7 µm. The single mode output power is limited but can be continuously scanned for at least 220 GHz by adding optical components in the oscillator cavity for increased stability. © 2011 Optical Society of America

It's Time to Redefine Moore's Law Again

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeBenedictis, Erik P.

The familiar story of Moore's law is actually inaccurate. Here, this article corrects the story, leading to different projections for the future. Moore's law is a fluid idea whose definition changes over time. It thus doesn't have the ability to "end," as is popularly reported, but merely takes different forms as the semiconductor and computer industries evolve.

Mineral resource of the month: germanium

USGS Publications Warehouse

Jorgenson, John D.

2003-01-01

Germanium is a hard, brittle semimetal that first came into use over a half-century ago as a semiconductor material in radar units and in the first transistor ever made. Most germanium is recovered as a byproduct of zinc smelting, but it has also been recovered at some copper smelters and from the fly ash of coal-burning industrial power plants.

It's Time to Redefine Moore's Law Again

DOE PAGES

DeBenedictis, Erik P.

2017-02-06

The familiar story of Moore's law is actually inaccurate. Here, this article corrects the story, leading to different projections for the future. Moore's law is a fluid idea whose definition changes over time. It thus doesn't have the ability to "end," as is popularly reported, but merely takes different forms as the semiconductor and computer industries evolve.

Spectroscopic characterization of III-V semiconductor nanomaterials

NASA Astrophysics Data System (ADS)

Crankshaw, Shanna Marie

III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored through a novel spectroscopic technique first formulated for the rather different purpose of dispersion engineering for slow-light schemes. The frequency-resolved technique combined with the unusual (110) quantum wells in a furthermore atypical waveguide experimental geometry has revealed fascinating behavior of electron spin splitting which points to the possibility of optically orienting electron spins with linearly polarized light---an experimental result supporting a theoretical description of the phenomenon itself only a few years old. Lastly, to explore a space of further-restricted dimensionality, the final chapters describe InP semiconductor nanowires with dimensions small enough to be considered truly one-dimensional. Like the bulk GaAs of the first few chapters, the InP nanowires here crystallize in a wurtzite structure. In the InP nanowire case, though, the experimental techniques explored for characterization are temperature-dependent time-integrated photoluminescence at the single-wire level (including samples with InAsP insertions) and time-resolved photoluminescence at the ensemble level. The carrier dynamics revealed through these time-resolved studies are the first of their kind for wurtzite InP nanowires. The chapters are thus ordered as a progression from three (bulk), to two (quantum well), to one (nanowire), to zero dimensions (axially-structured nanowire), with the uniting theme the emphasis on connecting the semiconductor nanomaterials' crystallinity to its exhibited properties by relevant experimental spectroscopic techniques, whether these are standard methods or effectively invented for the case at hand.

76 FR 81912 - Notice of Petitions by Firms for Determination of Eligibility To Apply for Trade Adjustment...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-29

... parts and components such as plugs, clips, rings, handles and small doors. Applied Engineering, Inc... Dyess Ave. Rapid 12/1/2011 The firm manufactures City, SD 57701. semiconductor devices, nanotechnology...

Hazardous Waste Cleanup: General Electric - Auburn Plant in Auburn, New York

EPA Pesticide Factsheets

GE purchased the property at Genesee Street in 1951 and constructed a manufacturing plant that produced a variety of electrical components including radar equipment, printed circuit boards and high voltage semiconductors. In January 1986, Powerex, Inc.,

Recent progress in tungsten oxides based memristors and their neuromorphological applications

NASA Astrophysics Data System (ADS)

Qu, Bo; Younis, Adnan; Chu, Dewei

2016-09-01

The advance in conventional silicon based semiconductor industry is now becoming indeterminacy as it still along the road of Moore's Law and concomitant problems associated with it are the emergence of a number of practical issues such as short channel effect. In terms of memory applications, it is generally believed that transistors based memory devices will approach to their scaling limits up to 2018. Therefore, one of the most prominent challenges today in semiconductor industry is the need of a new memory technology which is able to combine the best characterises of current devices. The resistive switching memories which are regarded as "memristors" thus gain great attentions thanks to their specific nonlinear electrical properties. More importantly, their behaviour resembles with the transmission characteristic of synapse in biology. Therefore, the research of synapses biomimetic devices based on memristor will certainly bring a great research prospect in studying synapse emulation as well as building artificial neural networks. Tungsten oxides (WO x ) exhibits many essential characteristics as a great candidate for memristive devices including: accredited endurance (over 105 cycles), stoichiometric flexibility, complimentary metal-oxide-semiconductor (CMOS) process compatibility and configurable properties including non-volatile rectification, memorization and learning functions. Herein, recent progress on Tungsten oxide based materials and its associating memory devices had been reviewed. The possible implementation of this material as a bio-inspired artificial synapse is also highlighted. The penultimate section summaries the current research progress for tungsten oxide based biological synapses and end up with several proposals that have been suggested for possible future developments.

TOPICAL REVIEW: Semiconductors for terahertz photonics applications

NASA Astrophysics Data System (ADS)

Krotkus, Arūnas

2010-07-01

Generation and measurement of ultrashort, subpicosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of far-infrared spectroscopy and imaging. This technique, THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility and large dark resistivity. Here we will review the most important developments in the field of investigation of such materials. The main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. The main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

Three- and Two-Dimensional Tin and Lead Halide Perovskite Semiconductors: Synthesis and Application in Photovoltaics

NASA Astrophysics Data System (ADS)

Cao, Duyen Hanh

Halide perovskites, AMX3 (A = monocation, B = Ge, Sn, or Pb, and X = halogen), present a versatile class of solution-processable semiconductors made from earth abundant materials with outstanding electrical and optical properties. Their solar cell efficiencies have dramatically increased from 9% to 22% in less than five years since 2012, a rate that has never been seen before in photovoltaic research. Critical to the final goal of commercializing perovskite solar cell technology is achieving device long-term stability and eliminating toxic elements in device components. This thesis uses 3D AMX 3 perovskites as a stand-in to develop a new class of lead-free, moisture stable, functional and highly tunable 2D Ruddlesden-Popper (BA) 2(MA)n-1SnnI3n+1 (n is an integer) perovskite semiconductors. Synthesis, thin film fabrication, extensive characterization, and solar cell device structure-performance relationships are presented throughout the entire thesis.

Water soluble nano-scale transient material germanium oxide for zero toxic waste based environmentally benign nano-manufacturing

NASA Astrophysics Data System (ADS)

Almuslem, A. S.; Hanna, A. N.; Yapici, T.; Wehbe, N.; Diallo, E. M.; Kutbee, A. T.; Bahabry, R. R.; Hussain, M. M.

2017-02-01

In the recent past, with the advent of transient electronics for mostly implantable and secured electronic applications, the whole field effect transistor structure has been dissolved in a variety of chemicals. Here, we show simple water soluble nano-scale (sub-10 nm) germanium oxide (GeO2) as the dissolvable component to remove the functional structures of metal oxide semiconductor devices and then reuse the expensive germanium substrate again for functional device fabrication. This way, in addition to transiency, we also show an environmentally friendly manufacturing process for a complementary metal oxide semiconductor (CMOS) technology. Every year, trillions of complementary metal oxide semiconductor (CMOS) electronics are manufactured and billions are disposed, which extend the harmful impact to our environment. Therefore, this is a key study to show a pragmatic approach for water soluble high performance electronics for environmentally friendly manufacturing and bioresorbable electronic applications.

Opto-valleytronic imaging of atomically thin semiconductors

DOE PAGES

Neumann, Andre; Lindlau, Jessica; Colombier, Léo; ...

2017-01-16

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular motion and associated valley polarization and valley coherence as key elements of opto-valleytronic functionality. Here, we introduce two-dimensional polarimetry as means of direct imaging of the valley pseudospin degree of freedom in monolayer transition metal dichalcogenides. Using MoS 2 as a representative material with valley-selective optical transitions, we establish quantitative image analysis for polarimetric maps of extended crystals, and identify valley polarization and valley coherence as sensitive probes of crystalline disorder. Moreover, we findmore » site-dependent thermal and non-thermal regimes of valley-polarized excitons in perpendicular magnetic fields. Finally, we demonstrate the potential of widefield polarimetry for rapid inspection of opto-valleytronic devices based on atomically thin semiconductors and heterostructures.« less

Opto-valleytronic imaging of atomically thin semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neumann, Andre; Lindlau, Jessica; Colombier, Léo

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular motion and associated valley polarization and valley coherence as key elements of opto-valleytronic functionality. Here, we introduce two-dimensional polarimetry as means of direct imaging of the valley pseudospin degree of freedom in monolayer transition metal dichalcogenides. Using MoS 2 as a representative material with valley-selective optical transitions, we establish quantitative image analysis for polarimetric maps of extended crystals, and identify valley polarization and valley coherence as sensitive probes of crystalline disorder. Moreover, we findmore » site-dependent thermal and non-thermal regimes of valley-polarized excitons in perpendicular magnetic fields. Finally, we demonstrate the potential of widefield polarimetry for rapid inspection of opto-valleytronic devices based on atomically thin semiconductors and heterostructures.« less

Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

NASA Astrophysics Data System (ADS)

He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

2016-10-01

Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

Cost of ownership for inspection equipment

NASA Astrophysics Data System (ADS)

Dance, Daren L.; Bryson, Phil

1993-08-01

Cost of Ownership (CoO) models are increasingly a part of the semiconductor equipment evaluation and selection process. These models enable semiconductor manufacturers and equipment suppliers to quantify a system in terms of dollars per wafer. Because of the complex nature of the semiconductor manufacturing process, there are several key attributes that must be considered in order to accurately reflect the true 'cost of ownership'. While most CoO work to date has been applied to production equipment, the need to understand cost of ownership for inspection and metrology equipment presents unique challenges. Critical parameters such as detection sensitivity as a function of size and type of defect are not included in current CoO models yet are, without question, major factors in the technical evaluation process and life-cycle cost. This paper illustrates the relationship between these parameters, as components of the alpha and beta risk, and cost of ownership.

WAMA: a method of optimizing reticle/die placement to increase litho cell productivity

NASA Astrophysics Data System (ADS)

Dor, Amos; Schwarz, Yoram

2005-05-01

This paper focuses on reticle/field placement methodology issues, the disadvantages of typical methods used in the industry, and the innovative way that the WAMA software solution achieves optimized placement. Typical wafer placement methodologies used in the semiconductor industry considers a very limited number of parameters, like placing the maximum amount of die on the wafer circle and manually modifying die placement to minimize edge yield degradation. This paper describes how WAMA software takes into account process characteristics, manufacturing constraints and business objectives to optimize placement for maximum stepper productivity and maximum good die (yield) on the wafer.

Overview of microoptics: Past, present, and future

NASA Technical Reports Server (NTRS)

Veldkamp, Wilfrid B.

1993-01-01

Through advances in semiconductor miniaturization technology, microrelief patterns, with characteristic dimensions as small as the wavelength of light, can now be mass reproduced to form high-quality and low-cost optical components. In a unique example of technology transfer, from electronics to optics, this capability is allowing optics designers to create innovative optical components that promise to solve key problems in optical sensors, optical communication channels, and optical processors.

Micropyrolyzer for chemical analysis of liquid and solid samples

DOEpatents

Mowry, Curtis D.; Morgan, Catherine H.; Manginell, Ronald P.; Frye-Mason, Gregory C.

2006-07-18

A micropyrolyzer has applications to pyrolysis, heated chemistry, and thermal desorption from liquid or solid samples. The micropyrolyzer can be fabricated from semiconductor materials and metals using standard integrated circuit technologies. The micropyrolyzer enables very small volume samples of less than 3 microliters and high sample heating rates of greater than 20.degree. C. per millisecond. A portable analyzer for the field analysis of liquid and solid samples can be realized when the micropyrolyzer is combined with a chemical preconcentrator, chemical separator, and chemical detector. Such a portable analyzer can be used in a variety of government and industrial applications, such as non-proliferation monitoring, chemical and biological warfare detection, industrial process control, water and air quality monitoring, and industrial hygiene.

Nanopatterning of Group V Elements for Tailoring the Electronic Properties of Semiconductors by Monolayer Doping.

PubMed

Thissen, Peter; Cho, Kyeongjae; Longo, Roberto C

2017-01-18

Control of the electronic properties of semiconductors is primarily achieved through doping. While scaling down the device dimensions to the molecular regime presents an increasing number of difficulties, doping control at the nanoscale is still regarded as one of the major challenges of the electronic industry. Within this context, new techniques such as monolayer doping (MLD) represent a substantial improvement toward surface doping with atomic and specific doping dose control at the nanoscale. Our previous work has explained in detail the atomistic mechanism behind MLD by means of density-functional theory calculations (Chem. Mater. 2016, 28, 1975). Here, we address the key questions that will ultimately allow one to optimize the scalability of the MLD process. First, we show that dopant coverage control cannot be achieved by simultaneous reaction of several group V elements, but stepwise reactions make it possible. Second, using ab initio molecular dynamics, we investigate the thermal decomposition of the molecular precursors, together with the stability of the corresponding binary and ternary dopant oxides, prior to the dopant diffusion into the semiconductor surface. Finally, the effect of the coverage and type of dopant on the electronic properties of the semiconductor is also analyzed. Furthermore, the atomistic characterization of the MLD process raises unexpected questions regarding possible crystal damage effects by dopant exchange with the semiconductor ions or the final distribution of the doping impurities within the crystal structure. By combining all our results, optimization recipes to create ultrashallow doped junctions at the nanoscale are finally proposed.

Coupled-resonator vertical-cavity lasers with two active gain regions

DOEpatents

Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

2003-05-20

A new class of coupled-resonator vertical-cavity semiconductor lasers has been developed. These lasers have multiple resonant cavities containing regions of active laser media, resulting in a multi-terminal laser component with a wide range of novel properties.

A study of the talent training project management for semiconductor industry in Taiwan: the application of a hybrid data envelopment analysis approach.

PubMed

Kao, Ling-Jing; Chiu, Shu-Yu; Ko, Hsien-Tang

2014-01-01

The purpose of this study is to evaluate the training institution performance and to improve the management of the Manpower Training Project (MTP) administered by the Semiconductor Institute in Taiwan. Much literature assesses the efficiency of an internal training program initiated by a firm, but only little literature studies the efficiency of an external training program led by government. In the study, a hybrid solution of ICA-DEA and ICA-MPI is developed for measuring the efficiency and the productivity growth of each training institution over the period. The technical efficiency change, the technological change, pure technical efficiency change, scale efficiency change, and the total factor productivity change were evaluated according to five inputs and two outputs. According to the results of the study, the training institutions can be classified by their efficiency successfully and the guidelines for the optimal level of input resources can be obtained for each inefficient training institution. The Semiconductor Institute in Taiwan can allocate budget more appropriately and establish withdrawal mechanisms for inefficient training institutions.

Small molecule organic semiconductors on the move: promises for future solar energy technology.

PubMed

Mishra, Amaresh; Bäuerle, Peter

2012-02-27

This article is written from an organic chemist's point of view and provides an up-to-date review about organic solar cells based on small molecules or oligomers as absorbers and in detail deals with devices that incorporate planar-heterojunctions (PHJ) and bulk heterojunctions (BHJ) between a donor (p-type semiconductor) and an acceptor (n-type semiconductor) material. The article pays particular attention to the design and development of molecular materials and their performance in corresponding devices. In recent years, a substantial amount of both, academic and industrial research, has been directed towards organic solar cells, in an effort to develop new materials and to improve their tunability, processability, power conversion efficiency, and stability. On the eve of commercialization of organic solar cells, this review provides an overview over efficiencies attained with small molecules/oligomers in OSCs and reflects materials and device concepts developed over the last decade. Approaches to enhancing the efficiency of organic solar cells are analyzed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Study of the Talent Training Project Management for Semiconductor Industry in Taiwan: The Application of a Hybrid Data Envelopment Analysis Approach

PubMed Central

Kao, Ling-Jing; Chiu, Shu-Yu; Ko, Hsien-Tang

2014-01-01

The purpose of this study is to evaluate the training institution performance and to improve the management of the Manpower Training Project (MTP) administered by the Semiconductor Institute in Taiwan. Much literature assesses the efficiency of an internal training program initiated by a firm, but only little literature studies the efficiency of an external training program led by government. In the study, a hybrid solution of ICA-DEA and ICA-MPI is developed for measuring the efficiency and the productivity growth of each training institution over the period. The technical efficiency change, the technological change, pure technical efficiency change, scale efficiency change, and the total factor productivity change were evaluated according to five inputs and two outputs. According to the results of the study, the training institutions can be classified by their efficiency successfully and the guidelines for the optimal level of input resources can be obtained for each inefficient training institution. The Semiconductor Institute in Taiwan can allocate budget more appropriately and establish withdrawal mechanisms for inefficient training institutions. PMID:24977192

2001 Industry Studies: Electronics

DTIC Science & Technology

2001-01-01

Center, Dallas, TX Northrop Grumman Corp, Electronic Sensors & Systems, Baltimore, MD International Acer Incorporated, Hsin Chu, Taiwan Aerospace...manufacturing. Many of the large-scale fabrication foundries are offshore in such countries as Taiwan, Singapore and Malaysia .5 - 5 - The largest market for...done in the US. However, more of the actual mass manufacturing of the chips are done in Taiwan, Singapore, and Malaysia . A new semiconductor facility

High density circuit technology, part 4

NASA Technical Reports Server (NTRS)

Wade, T. E.

1982-01-01

An accurate study and evaluation of dielectric thin films is conducted in order to find the material or combination of materials which would optimize NASA'S double layer metal process. Emphasis is placed on polyimide dielectrics because of their reported outstanding dielectric characteristics (including electrical, chemical, thermal, and mechanical) and ease of processing, as well as their rapid acceptance by the semiconductor industry.

America COMPETES Act: Programs, Funding, and Selected Issues

DTIC Science & Technology

2008-10-17

semiconductor industry, was created.7 Additional congressional actions also focused on increasing corporate spending on research and development in...Federal Policy, and Legislative Action , by Jeffrey J. Kuenzi. 44 Bureau of Economic Analysis/National Science Foundation, “2007 Research and Development...government consider a civilian technology corporation or a civilian technology agency, in limited areas, including energy research .80 A similar action

SEMATECH, A Case Study: Analysis of a Government-Industry Partnership

DTIC Science & Technology

1993-09-23

profit potential in the private market. Often, public sector technologies do not. Commercial technologies must be technically and economically...and Private Spending .................. 80 ix I. INTRODUCTION AND BACKGROUND Critics proclaim the Semiconductor Manufacturing Technology Initiative...in the R&D market and in the product market." (Katz and Ordover, 1990, p. 150) Technological spillovers result primarily from private R&D investment