The importance of scattering, surface potential, and vanguard counter-potential in terahertz emission from gallium arsenide

NASA Astrophysics Data System (ADS)

Cortie, D. L.; Lewis, R. A.

2012-06-01

It is well established that under excitation by short (<1 ps), above-band-gap optical pulses, semiconductor surfaces may emit terahertz-frequency electromagnetic radiation via photocarrier diffusion (the dominant mechanism in InAs) or photocarrier drift (dominant in GaAs). Our three-dimensional ensemble Monte Carlo simulations allow multiple physical parameters to vary over wide ranges and provide unique direct insight into the factors controlling terahertz emission. We find for GaAs (in contrast to InAs), scattering and the surface potential are key factors. We further delineate in GaAs (as in InAs) the role of a vanguard counter-potential. The effects of varying dielectric constant, band-gap, and effective mass are similar in both emitter types.

Unassisted HI photoelectrolysis using n-WSe2 solar absorbers.

PubMed

McKone, James R; Potash, Rebecca A; DiSalvo, Francis J; Abruña, Héctor D

2015-06-07

Molybdenum and tungsten diselenide are among the most robust and efficient semiconductor materials for photoelectrochemistry, but they have seen limited use for integrated solar energy storage systems. Herein, we report that n-type WSe2 photoelectrodes can facilitate unassisted aqueous HI electrolysis to H2(g) and HI3(aq) when placed in contact with a platinum counter electrode and illuminated by simulated sunlight. Even in strongly acidic electrolyte, the photoelectrodes are robust and operate very near their maximum power point. We have rationalized this behavior by characterizing the n-WSe2|HI/HI3 half cell, the Pt|HI/H2||HI3/HI|Pt full cell, and the n-WSe2 band-edge positions. Importantly, specific interactions between the n-WSe2 surface and aqueous iodide significantly shift the semiconductor's flatband potential and allow for unassisted HI electrolysis. These findings exemplify the important role of interfacial chemical reactivity in influencing the energetics of semiconductor-liquid junctions and the resulting device performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

Designing Nanoscale Counter Using Reversible Gate Based on Quantum-Dot Cellular Automata

NASA Astrophysics Data System (ADS)

Moharrami, Elham; Navimipour, Nima Jafari

2018-04-01

Some new technologies such as Quantum-dot Cellular Automata (QCA) is suggested to solve the physical limits of the Complementary Metal-Oxide Semiconductor (CMOS) technology. The QCA as one of the novel technologies at nanoscale has potential applications in future computers. This technology has some advantages such as minimal size, high speed, low latency, and low power consumption. As a result, it is used for creating all varieties of memory. Counter circuits as one of the important circuits in the digital systems are composed of some latches, which are connected to each other in series and actually they count input pulses in the circuit. On the other hand, the reversible computations are very important because of their ability in reducing energy in nanometer circuits. Improving the energy efficiency, increasing the speed of nanometer circuits, increasing the portability of system, making smaller components of the circuit in a nuclear size and reducing the power consumption are considered as the usage of reversible logic. Therefore, this paper aims to design a two-bit reversible counter that is optimized on the basis of QCA using an improved reversible gate. The proposed reversible structure of 2-bit counter can be increased to 3-bit, 4-bit and more. The advantages of the proposed design have been shown using QCADesigner in terms of the delay in comparison with previous circuits.

An experiment to study the nuclear component of primary cosmic rays

NASA Technical Reports Server (NTRS)

Paul, J. M.; Verma, S. D.

1971-01-01

An apparatus has been designed and is being fabricated to study the charge composition, fluxes, and energy spectra of light nuclei in the energy region from 1 GeV to 100 GeV. The apparatus essentially consists of an array of a large number of particle detectors operated in coincidence and serving as a charged particle telescope. A mosaic silicon semiconductor detector, a plastic scintillation counter and a lucite Cerenkov detector are used to measure the charges of the incident nuclei. Two one-inch thick CsI detectors are used to study low energy particles. An ionization spectrometer is utilized to measure primary energies in the 1 to 100 GeV energy interval. A gas Cerenkov counter is being designed to distinguish between electrons and protons. It is planned to calibrate the apparatus at an accelerator using particles of known energy.

Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

DOE PAGES

Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.; ...

2016-02-01

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

PubMed

Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

2016-11-24

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

Unassisted HI photoelectrolysis using n-WSe 2 solar absorbers

DOE Office of Scientific and Technical Information (OSTI.GOV)

McKone, James R.; Potash, Rebecca A.; DiSalvo, Francis J.

Molybdenum and tungsten diselenide are among the most robust and efficient semiconductor materials for photoelectrochemistry, but they have seen limited use for integrated solar energy storage systems. Herein, we report that n-type WSe 2 photoelectrodes can facilitate unassisted aqueous HI electrolysis to H 2(g) and HI 3(aq) when placed in contact with a platinum counter electrode and illuminated by simulated sunlight. Even in strongly acidic electrolyte, the photoelectrodes are robust and operate very near their maximum power point. We have rationalized this behavior by characterizing the n-WSe 2|HI/HI 3 half cell, the Pt|HI/H 2||HI 3/HI|Pt full cell, and the n-WSemore » 2 band-edge positions. Importantly, specific interactions between the n-WSe 2 surface and aqueous iodide significantly shift the semiconductor’s flatband potential and allow for unassisted HI electrolysis. These findings exemplify the important role of interfacial chemical reactivity in influencing the energetics of semiconductor-liquid junctions and the resulting device performance.« less

Noble-Metal-Free Molybdenum Disulfide Cocatalyst for Photocatalytic Hydrogen Production.

PubMed

Yuan, Yong-Jun; Lu, Hong-Wei; Yu, Zhen-Tao; Zou, Zhi-Gang

2015-12-21

Photocatalytic water splitting using powered semiconductors as photocatalysts represents a promising strategy for clean, low-cost, and environmentally friendly production of H2 utilizing solar energy. The loading of noble-metal cocatalysts on semiconductors can significantly enhance the solar-to-H2 conversion efficiency. However, the high cost and scarcity of noble metals counter their extensive utilization. Therefore, the use of alternative cocatalysts based on non-precious metal materials is pursued. Nanosized MoS2 cocatalysts have attracted considerable attention in the last decade as a viable alternative to improve solar-to-H2 conversion efficiency because of its superb catalytic activity, excellent stability, low cost, availability, environmental friendliness, and chemical inertness. In this perspective, the design, structures, synthesis, and application of MoS2 -based composite photocatalysts for solar H2 generation are summarized, compared, and discussed. Finally, this Review concludes with a summary and remarks on some challenges and opportunities for the future development of MoS2 -based photocatalysts. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

‘Symbiotic’ semiconductors: unusual and counter-intuitive Ge/Si/O interactions

NASA Astrophysics Data System (ADS)

George, T.; Li, P. W.; Chen, K. H.; Peng, K. P.; Lai, W. T.

2017-03-01

Since the inception of the first transistors in the 1940s, the immense body of work on the Group IV semiconductors, Si and Ge, has spearheaded spectacular advances in modern integrated-circuit (IC) technology that has enabled a vast landscape of device applications in logic, memory, and computing. Although initially Si supplanted Ge as the material of choice for metal-oxide-semiconductor field-effect transistors, Ge-based devices are now breaking new ground. Widespread and innovative Ge-based applications exist in optoelectronics, communications, microelectro-mechanical systems, and energy harvesting/savings. On the fundamental, materials science front, while it is well known that Ge and Si are fully miscible in each other, the nature and extent of their attraction for each other has largely been unexplored. In this paper, we report a rather curious interplay between Ge and Si that occurs at high temperature (~900 °C) and that can be best described as ‘symbiotic’. Each element appears to facilitate reactions in the other which would otherwise not be possible. Oxygen intersititials also appear to play a major role in these reactions. Our experimental work has allowed us to classify four distinct regimes where these reactions occur. We describe these conditions and provide the necessary theoretical explanations for these results.

Electrical control of second-harmonic generation in a WSe 2 monolayer transistor

DOE PAGES

Seyler, Kyle L.; Schaibley, John R.; Gong, Pu; ...

2015-04-20

Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material and, so far, dynamical control of optical nonlinearities remains confined to research laboratories as a spectroscopic tool. In this paper, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe 2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an ordermore » of magnitude at low temperature and nearly a factor of four at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser due to the combination of the two-photon and one-photon valley selection rules, which have opposite helicity in the monolayer. Finally, our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.« less

PULSION® HP: Tunable, High Productivity Plasma Doping

NASA Astrophysics Data System (ADS)

Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

2011-01-01

Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism—deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

White/blue-emitting, water-dispersible CdSe quantum dots prepared by counter ion-induced polymer collapse

NASA Astrophysics Data System (ADS)

Wang, Jing; Goh, Jane Betty; Goh, M. Cynthia; Giri, Neeraj Kumar; Paige, Matthew F.

2015-09-01

The synthesis and characterization of water-dispersible, luminescent CdSe/ZnS semiconductor quantum dots that exhibit nominal "white" fluorescence emission and have potential applications in solid-state lighting is described. The nanomaterials, prepared through counter ion-induced collapse and UV cross-linking of high-molecular weight polyacrylic acid in the presence of appropriate aqueous inorganic ions, were of ∼2-3 nm diameter and could be prepared in gram quantities. The quantum dots exhibited strong luminescence emission in two bands, the first in the blue-region (band edge) of the optical spectrum and the second, a broad emission in the red-region (attributed to deep trap states) of the optical spectrum. Because of the relative strength of emission of the band edge and deep trap state luminescence, it was possible to achieve visible white luminescence from the quantum dots in aqueous solution and in dried, solid films. The optical spectroscopic properties of the nanomaterials, including ensemble and single-molecule spectroscopy, was performed, with results compared to other white-emitting quantum dot systems described previously in the literature.

Comparison of cosmic rays radiation detectors on-board commercial jet aircraft.

PubMed

Kubančák, Ján; Ambrožová, Iva; Brabcová, Kateřina Pachnerová; Jakůbek, Jan; Kyselová, Dagmar; Ploc, Ondřej; Bemš, Július; Štěpán, Václav; Uchihori, Yukio

2015-06-01

Aircrew members and passengers are exposed to increased rates of cosmic radiation on-board commercial jet aircraft. The annual effective doses of crew members often exceed limits for public, thus it is recommended to monitor them. In general, the doses are estimated via various computer codes and in some countries also verified by measurements. This paper describes a comparison of three cosmic rays detectors, namely of the (a) HAWK Tissue Equivalent Proportional Counter; (b) Liulin semiconductor energy deposit spectrometer and (c) TIMEPIX silicon semiconductor pixel detector, exposed to radiation fields on-board commercial Czech Airlines company jet aircraft. Measurements were performed during passenger flights from Prague to Madrid, Oslo, Tbilisi, Yekaterinburg and Almaty, and back in July and August 2011. For all flights, energy deposit spectra and absorbed doses are presented. Measured absorbed dose and dose equivalent are compared with the EPCARD code calculations. Finally, the advantages and disadvantages of all detectors are discussed. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry.

PubMed

Choi, Kwang-Min; Kim, Jin-Ho; Park, Ju-Hyun; Kim, Kwan-Sick; Bae, Gwi-Nam

2015-01-01

This study aims to elucidate the exposure properties of nanoparticles (NPs; <100 nm in diameter) in semiconductor manufacturing processes. The measurements of airborne NPs were mainly performed around process equipment during fabrication processes and during maintenance. The number concentrations of NPs were measured using a water-based condensation particle counter having a size range of 10-3,000 nm. The chemical composition, size, and shape of NPs were determined by scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy. The resulting concentrations of NPs ranged from 0.00-11.47 particles/cm(3). The concentration of NPs measured during maintenance showed a tendency to increase, albeit incrementally, compared to that measured during normal conditions (under typical process conditions without maintenance). However, the increment was small. When comparing the mean number concentration and standard deviation (n ± σ) of NPs, the chemical mechanical polishing (CMP) process was the highest (3.45 ± 3.65 particles/cm(3)), and the dry etch (ETCH) process was the lowest (0.11 ± 0.22 particles/cm(3)). The major NPs observed were silica (SiO2) and titania (TiO2) particles, which were mainly spherical agglomerates ranging in size from 25-280 nm. Sampling of semiconductor processes in CMP, chemical vapor deposition, and ETCH reveled NPs were <100 nm in those areas. On the other hand, particle size exceeded 100 nm in diffusion, metallization, ion implantation, and wet cleaning/etching process. The results show that the SiO2 and TiO2 are the major NPs present in semiconductor cleanroom environments.

Solar hydrogen production by tandem cell system composed of metal oxide semiconductor film photoelectrode and dye-sensitized solar cell

NASA Astrophysics Data System (ADS)

Arakawa, H.; Shiraishi, C.; Tatemoto, M.; Kishida, H.; Usui, D.; Suma, A.; Takamisawa, A.; Yamaguchi, T.

2007-09-01

Photocatalytic and photoelectrochemical approaches to solar hydrogen production in our group were introduced. In photocatalytic water splitting system using NiO x/ TiO II powder photocatalyst with concentrated Na IICO 3 aqueous solution, solar energy conversion efficiency to H II and O II production (STH efficiency) was 0.016%. In addition, STH efficiency of visible light responding photocatalyst, NiOx/ promoted In 0.9Ni 0.1TaO 4, was estimated at 0.03%. In photoelectrochemical system using an oxide semiconductor film phptoelectrode, STH efficiencies of meosporous TiO II (Anatase) , mesoporous visible light responding S-doped TiO II (Anatase) and WO 3 film were 0.32-0.44% at applied potential of 0.35 V vs NHE, 0.14% at 0.55 V and 0.44% at 0.9 V, respectively. Finally, solar hydrogen production by tandem cell system composed of an oxide semiconductor photoelectrode, a Pt wire counter electrode and a dye-sensitized solar cell (DSC) was investigated. As photoelectrodes, meosporous TiO II (Anatase), mesoporous S-doped TiO II (Anatase), WO 3, BiVO 4 and Fe IIO 3 film were tested. STH efficiency of tandem cell system composed of a WO 3 film photoelectrode, and a two-series-connected DSC (Voc = 1.4 V) was 2.5-2.8%. In conclusion, it is speculated that more than 5% STH efficiency will be obtained by tandem cell system composed of an oxide semiconductor photoelectrode and a two-series-connected DSC in near future. This suggests a cost-effective and practical application of this system for solar hydrogen production.

Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

NASA Astrophysics Data System (ADS)

Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

2016-10-01

Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron-hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

Radon depletion in xenon boil-off gas

NASA Astrophysics Data System (ADS)

Bruenner, S.; Cichon, D.; Lindemann, S.; Undagoitia, T. Marrodán; Simgen, H.

2017-03-01

An important background in detectors using liquid xenon for rare event searches arises from the decays of radon and its daughters. We report for the first time a reduction of ^{222}Rn in the gas phase above a liquid xenon reservoir. We show a reduction factor of ≳ 4 for the ^{222}Rn concentration in boil-off xenon gas compared to the radon enriched liquid phase. A semiconductor-based α -detector and miniaturized proportional counters are used to detect the radon. As the radon depletion in the boil-off gas is understood as a single-stage distillation process, this result establishes the suitability of cryogenic distillation to separate radon from xenon down to the 10^{-15} mol/mol level.

Spectral CT data acquisition with Medipix3.1

NASA Astrophysics Data System (ADS)

Walsh, M. F.; Nik, S. J.; Procz, S.; Pichotka, M.; Bell, S. T.; Bateman, C. J.; Doesburg, R. M. N.; De Ruiter, N.; Chernoglazov, A. I.; Panta, R. K.; Butler, A. P. H.; Butler, P. H.

2013-10-01

This paper describes the acquisition of spectral CT images using the Medipix3.1 in spectroscopic mode, in which the chip combines 2 × 2 pixel clusters to increase the number of energy thresholds and counters from 2 to 8. During preliminary measurements, it was observed that the temperature, DAC and equalisation stability of the Medipix3.1 outperformed the Medipix3.0, while maintaining similar imaging quality. In this paper, the Medipix3.1 chips were assembled in a quad (2 × 2) layout, with the four ASICs bump-bonded to a silicon semiconductor doped as an np-junction diode. To demonstrate the biological imaging quality that is possible with the Medipix3.1, an image of a mouse injected with gold nano-particle contrast agent was obtained. CT acquisition in spectroscopic mode was enabled and examined by imaging a customised phantom containing multiple contrast agents and biological materials. These acquisitions showed a limitation of imaging performance depending on the counter used. Despite this, identification of multiple materials in the phantom was demonstrated using an in-house material decomposition algorithm. Furthermore, gold nano-particles were separated from biological tissues and bones within the mouse by means of image rendering.

Active counter electrode in a-SiC electrochemical metallization memory

NASA Astrophysics Data System (ADS)

Morgan, K. A.; Fan, J.; Huang, R.; Zhong, L.; Gowers, R.; Ou, J. Y.; Jiang, L.; De Groot, C. H.

2017-08-01

Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In a positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher R OFF/R ON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.

Solid-state image sensor with focal-plane digital photon-counting pixel array

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

1995-01-01

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

A statistical model of a metallic inclusion in semiconducting media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shikin, V. B., E-mail: shikin@issp.ac.ru

The properties of an isolated multicharged atom embedded into a semiconducting medium are discussed. The analysis generalizes the results of the known Thomas–Fermi theory for a multicharged (Z ≫ 1) atom in vacuum when it is immersed into an electron–hole gas of finite temperature. The Thomas–Fermi–Debye (TFD) atom problem is directly related to the properties of donors in low-doped semiconductors and is alternative in its conclusions to the ideal scenario of dissociation of donors. In the existing ideal statistics, an individual donor under infinitely low doping is completely ionized (a charged center does not hold its neutralizing counter-ions). A Thomas–Fermi–Debyemore » atom (briefly, a TFD donor) remains a neutral formation that holds its screening “coat” even for infinitely low doping level, i.e., in the region of n{sub d}λ{sub 0}{sup 3} ≪ 1, where n{sub d} is the concentration of the doping impurity and λ{sub 0} is the Debye length with the parameters of intrinsic semiconductor. Various observed consequences in the behavior of a TFD donor are discussed that allow one to judge the reality of the implications of the TFD donor model.« less

Synchronized conductivity modulation to realize broadband lossless magnetic-free non-reciprocity.

PubMed

Dinc, Tolga; Tymchenko, Mykhailo; Nagulu, Aravind; Sounas, Dimitrios; Alu, Andrea; Krishnaswamy, Harish

2017-10-06

Recent research has explored the spatiotemporal modulation of permittivity to break Lorentz reciprocity in a manner compatible with integrated-circuit fabrication. However, permittivity modulation is inherently weak and accompanied by loss due to carrier injection, particularly at higher frequencies, resulting in large insertion loss, size, and/or narrow operation bandwidths. Here, we show that the presence of absorption in an integrated electronic circuit may be counter-intuitively used to our advantage to realize a new generation of magnet-free non-reciprocal components. We exploit the fact that conductivity in semiconductors provides a modulation index several orders of magnitude larger than permittivity. While directly associated with loss in static systems, we show that properly synchronized conductivity modulation enables loss-free, compact and extremely broadband non-reciprocity. We apply these concepts to obtain a wide range of responses, from isolation to gyration and circulation, and verify our findings by realizing a millimeter-wave (25 GHz) circulator fully integrated in complementary metal-oxide-semiconductor technology.Optical non-reciprocity achieved through refractive index modulation can have its challenges and limitations. Here, Dinc et al. introduce the concept of non-reciprocity based on synchronized spatio-temporal modulation of conductivity to achieve different types of non-reciprocal functionality.

Raman scattering from phonons and magnons in magnetic semiconductors, MnTe

NASA Technical Reports Server (NTRS)

Mobasser, S. R.; Hart, T. R.

1985-01-01

Comparisons are made between theoretical and experimental data on laser Raman scattering by phonons and two-magnons in antiferromagnetic and paramagnetic phases of MnTe. The study was performed specifically to characterize the magnetic exchange coupling constants of the Mn ions in the samples. Crystal MnTe samples were bombarded with an Ar ion laser beam to obtain spectrometer and photon counter data. One E(2g) phonon with a room temperature energy of 178/cm and a two-magnon peak of 360/cm were observed in the Raman spectrum. A spin wave dispersion relation is presented for the spectrum. Finally, a Monte Carlo technique was used to calculate the two-magnon joint density of states that best fits the experimental data.

Analysis and Optimization of Thin Film Ferroelectric Phase Shifters

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.; VanKeuls, Fred W.; Warner, Joseph D.; Mueller, Carl H.; Alterovitz, Samuel A.; Miranda, Felix A.; Qureshi, A. Haq; Romanofsky, Robert R. (Technical Monitor)

2000-01-01

Microwave phase shifters have been fabricated from (YBa2Cu3O(7-delta) or Au)/SrTiO3 and Au/Ba(x)Sr(1-x)TiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counter-parts parts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is approximately equal 5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

Understanding the synthesis, performance, and passivation of metal oxide photocathodes

NASA Astrophysics Data System (ADS)

Flynn, Cory James

Metal oxides are ubiquitous in semiconductor technologies for their ease of synthesis, chemical stability, and tunable optical/electronic properties. These properties are especially important to fabricating efficient photoelectrodes for solar-energy applications. To counter inherent problems in these materials, new strategies were developed and successfully implemented on the widely-utilized p-type semiconductor, NiO. As the size of semiconductor materials shrink, the surface-to-volume ratio increases and surface defects dominate the performance of the materials. Surface defects can alter the optical and electronic characteristics of materials by changing the Fermi level, charge-carrier mobility, and surface reactivity. We first present a strategy to increase the electrical mobility of mesoporous metal oxide electrode materials by optimizing shape morphology. Transitioning from nanospheres to hexagonal nanoplatelets increased the charge-carrier mobility by one order of magnitude. We then employed this improved material with a new vapor-phase deposition method termed targeted atomic deposition (TAD) to selectively passivate defect sites in semiconductor nanomaterials. We demonstrated the capabilities of this passivation method by applying a TAD of aluminum onto NiO. By exploiting a temperature-dependent deposition process, we selectively passivated the highly reactive sites in NiO: oxygen dangling bonds associated with Ni vacancies. The TAD treatment completely passivated all measurable surface defects, optically bleached the material, and significantly improved all photovoltaic performance metrics in dye-sensitized solar cells. The technique was proven to be generic to numerous forms of NiO. While the implementation of TAD of Al was successful, the process involved pulsing two precursors to passivate the material. Ideally, the TAD process should require only a single precursor and continuous exposure. We utilized a continuous flow of diborane to perform a TAD of B onto NiO. The TAD process was successfully implemented in a simplified manner. The treatment moderately increased DSSC performance and proved viability with a different vapor-phase precursor.

DEPRON dosimeter for ``Lomonosov'' satellite

NASA Astrophysics Data System (ADS)

Brilkov, Ivan; Vedenkin, Nikolay; Panasyuk, Mikhail; Amelyushkin, Aleksandr; Petrov, Vasily; Nechayev, Oleg; Benghin, Victor

It is commonly known, that cosmic radiation generates negative impact on the human body during space flight. The structure of the radiation fields in the near-Earth space was studied during intensive research of recent decades. Huge number of dosimetry studies was conducted on manned and unmanned space vehicles in order to solve the problem of radiation safety humans during space flights. It should be noted that most of the measurements was made onboard the spacecrafts, flying along the orbits with inclination of up to 51.6 degrees. Due to the prospect of manned missions at the orbits with larger inclination it seems advisable to conduct preliminary detailed dosimetry measurements at high-altitude orbit, for which the "Lomonosov" satellite provides good opportunities. We chose a method of cosmic radiation dosimetry based on semiconductor detectors. Proposed in the late 70's this method is widely used onboard spacecraft, including full-time radiation monitoring onboard the ISS. Recently it has been improved, providing an opportunity to register not only the absorbed dose of charged particles radiation, but also range of their ionization losses. It allowed assessment of equivalent dose. Appropriate procedure based on using of a telescope consisting of two semiconductor detectors provided a basis of the developed unit. It should be noted that not only the charged particles contribute significantly in the equivalent dose, but also neutrons do. Semiconductor detectors have low sensitivity to neutron radiation and are not sufficient for detecting the expected flux of neutrons. It was therefore decided to add thermal neutrons counter to the developed device in order to provide an opportunity of estimation of neutron flux variations along the satellite trajectory. A gas-discharge counter SI-13N, operated in a mode of corona discharge was chosen as a neutron detector. This method of neutron detection is well-proven and used many times in SINP MSU experiments. Thus, the appearance of the instrument DEPRON (Dosimeter of Electrons, PROtons and Neutrons) was determined. DEPRON is intended for registration of the absorbed doses and linear energy transfer spectra for high-energy electrons, protons and nuclei of space radiation, as well as registration of thermal and slow neutrons. The experiment based on DEPRON instrument is aimed at the studies of the distribution of space radiation dose rate at high latitude paths in order to study the flight paths of perspective manned spacecraft. Present work provides a brief description of the DEPRON instrument, its calibration results and the structure of the output data.

Effect of screen printing type on transparent TiO2 layer as the working electrode of dye sensitized solar cell (DSSC) for solar windows applications

NASA Astrophysics Data System (ADS)

Nurosyid, F.; Furqoni, L.; Supriyanto, A.; Suryana, R.

2016-11-01

The working electrode based on semiconductor TiO2 DSSC has been fabricated by screen printing method. This study aim is to determine the effect of the screen type on TiO2 layer as the working electrode of DSSC. Screen used for deposition of TiO2 has the types of; T- 49, T-55 and T-61. TiO2 layer was sintered at temperature of 500°C. DSSC structure was composed of semiconductor TiO2 adsorbed dye, an electrolyte solution and a platinum counter electrode. TiO2 layer thickness was characterized by Scanning Electron Microscopy (SEM), while the absorbance was characterized using UV-Vis spectrophotometer and the electrical properties of DSSC were characterized by Keithley I-V measurement. TiO2 layer fabricated by screen T-49 had the biggest thickness that was 3.2 ± 0.3 μm and the highest UV-Vis absorbance wave at the peak wavelength of 315 nm with the absorbance value was 1.7. The I-V characterization showed that the sample fabricated by screen T-49 obtained the greatest efficiency that was 1.0 × 10-1%

An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

NASA Astrophysics Data System (ADS)

Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

2017-09-01

Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

150-nm generation lithography equipment

NASA Astrophysics Data System (ADS)

Deguchi, Nobuyoshi; Uzawa, Shigeyuki

1999-07-01

Lithography by step-and-scan exposure is expected to be the mainstream for semiconductor manufacturing below 180 nm resolution patterns. We have developed a scanner for 150 nm features on either 200 mm or 300 mm wafers. For this system, the synchronous stage system has been redesigned which makes it possible to improve imaging performance and overlay accuracy. A new 300 mm wafer stage enhances productivity while weighting almost the same as the stage for 200 mm wafers. The mainbody mechanical frame incorporates reactive force receiver system to counter the inertial energy and vibrational issues associated with high speed wafer and reticle stage scanning. This report outlines the total system design, new technologies and performance data of the Cannon FPA-5000ES2 step-and-scan exposure tool developed for the 150 nm generation lithography.

Convection Induced by Traveling Magnetic Fields in Semiconductor Melts

NASA Technical Reports Server (NTRS)

Konstantin, Mazuruk

2000-01-01

Axisymmetric traveling magnetic fields (TMF) can be beneficial for crystal growth applications. such as the vertical Bridgman, float zone or traveling heater methods. TMF induces a basic flow in the form of a single roll. This type of flow can enhance mass and heat transfer to the growing crystal. More importantly, the TMF Lorentz body force induced in the system can counterbalance the buoyancy forces, so the resulting convection can be much smaller and even the direction of it can be changed. In this presentation, we display basic features of this novel technique. In particular, numerical calculations of the Lorentz force for arbitrary frequencies will be presented along with induced steady-state fluid flow profiles. Also, numerical modeling of the TMF counter-balancing natural convection in vertical Bridgman systems will be demonstrated.

A 72 × 60 Angle-Sensitive SPAD Imaging Array for Lens-less FLIM.

PubMed

Lee, Changhyuk; Johnson, Ben; Jung, TaeSung; Molnar, Alyosha

2016-09-02

We present a 72 × 60, angle-sensitive single photon avalanche diode (A-SPAD) array for lens-less 3D fluorescence lifetime imaging. An A-SPAD pixel consists of (1) a SPAD to provide precise photon arrival time where a time-resolved operation is utilized to avoid stimulus-induced saturation, and (2) integrated diffraction gratings on top of the SPAD to extract incident angles of the incoming light. The combination enables mapping of fluorescent sources with different lifetimes in 3D space down to micrometer scale. Futhermore, the chip presented herein integrates pixel-level counters to reduce output data-rate and to enable a precise timing control. The array is implemented in standard 180 nm complementary metal-oxide-semiconductor (CMOS) technology and characterized without any post-processing.

A 72 × 60 Angle-Sensitive SPAD Imaging Array for Lens-less FLIM

PubMed Central

Lee, Changhyuk; Johnson, Ben; Jung, TaeSung; Molnar, Alyosha

2016-01-01

We present a 72 × 60, angle-sensitive single photon avalanche diode (A-SPAD) array for lens-less 3D fluorescence lifetime imaging. An A-SPAD pixel consists of (1) a SPAD to provide precise photon arrival time where a time-resolved operation is utilized to avoid stimulus-induced saturation, and (2) integrated diffraction gratings on top of the SPAD to extract incident angles of the incoming light. The combination enables mapping of fluorescent sources with different lifetimes in 3D space down to micrometer scale. Futhermore, the chip presented herein integrates pixel-level counters to reduce output data-rate and to enable a precise timing control. The array is implemented in standard 180 nm complementary metal-oxide-semiconductor (CMOS) technology and characterized without any post-processing. PMID:27598170

Multichannel Spectrometer of Time Distribution

NASA Astrophysics Data System (ADS)

Akindinova, E. V.; Babenko, A. G.; Vakhtel, V. M.; Evseev, N. A.; Rabotkin, V. A.; Kharitonova, D. D.

2015-06-01

For research and control of characteristics of radiation fluxes, radioactive sources in particular, for example, in paper [1], a spectrometer and methods of data measurement and processing based on the multichannel counter of time intervals of accident events appearance (impulses of particle detector) MC-2A (SPC "ASPECT") were created. The spectrometer has four independent channels of registration of time intervals of impulses appearance and correspondent amplitude and spectrometric channels for control along the energy spectra of the operation stationarity of paths of each of the channels from the detector to the amplifier. The registration of alpha-radiation is carried out by the semiconductor detectors with energy resolution of 16-30 keV. Using a spectrometer there have been taken measurements of oscillations of alpha-radiation 239-Pu flux intensity with a subsequent autocorrelative statistical analysis of the time series of readings.

Dispersive bi-stability in a vertical microcavity-based saturable absorber due to photo-thermal effect and initial phase-detuning

NASA Astrophysics Data System (ADS)

Pradhan, R.; Saha, S.; Datta, P. K.

2013-01-01

Round-trip phase-shifts with intensity of an input signal due to saturable index change and optically induced thermal effects in a vertical cavity semiconductor (quantum wells) saturable absorber (VCSSA) are investigated analytically to observe counter-clockwise bi-stability in transmission mode and clockwise bi-stability in reflection mode. Simultaneous effects of Kerr nonlinearity and cavity heating on resonance wavelength-shift of the VCSSA micro-cavity are investigated. It is found that these bi-stable characteristics are possible to the absorption edge of nonlinear material for long wavelength side operations of low intensity resonance wavelength of the micro-cavity, where dispersion of absorption and refraction are neglected over a small range of optical wavelength tuning (δλ˜10 nm). Simulations are carried out to find out optimized parameters of the device for bi-stable characteristics. Operations are demonstrated for InGaAs/InP quantum wells based VCSSA with low intensity resonance wavelength of 1570 nm. For counter-clockwise bi-stable switching at working wavelength of 1581 nm, an input intensity variation of 0.79IS is required with top (Rt) and back DBR reflectivity (Rb) of 91% and 93%, respectively, where IS represents the absorption saturation intensity of nonlinear medium. Whereas, the clockwise bi-stability occurs at 0.22IS for working wavelength of 1578 nm with Rt of 90% and Rb of 98%, respectively.

Next generation DIRCM for 2.1-2.3 micron wavelength based on direct-diode GaSb technology

NASA Astrophysics Data System (ADS)

Dvinelis, Edgaras; Naujokaitė, Greta; Greibus, Mindaugas; Trinkūnas, Augustinas; Vizbaras, Kristijonas; Vizbaras, Augustinas

2018-02-01

Continuous advances in low-cost MANPAD heat-seeking missile technology over the past 50 years remains the number one hostile threat to airborne platforms globally responsible for over 60 % of casualties. Laser based directional countermeasure (DIRCM) technology have been deployed to counter the threat. Ideally, a laser based DIRCM system must involve a number of lasers emitting at different spectral bands mimicking the spectral signature of the airborne platform. Up to now, near and mid infrared spectral bands have been covered with semiconductor laser technology and only SWIR band remained with bulky fiber laser technology. Recent technology developments on direct-diode GaSb laser technology at Brolis Semiconductors offer a replacement for the fiber laser source leading to significant improvements by few orders of magnitude in weight, footprint, efficiency and cost. We demonstrate that with careful engineering, several multimode emitters can be combined to provide a directional laser beam with radiant intensity from 10 kW/sr to 60 kW/sr in an ultra-compact hermetic package with weight < 30 g and overall efficiency of 15 % in the 2.1- 2.3 micron spectral band offering 150 times improvement in efficiency and reduction in footprint. We will discuss present results, challenges and future developments for such next-generation integrated direct diode DIRCM modules for SWIR band.

An Experiment in Radiation Measurement Using the Depron Instrument

NASA Astrophysics Data System (ADS)

Benghin, Victor V.; Nechaev, Oleg Y.; Zolotarev, Ivan A.; Amelyushkin, Alexander M.; Petrov, Vasiliy L.; Panasyuk, Milhail I.; Yashin, Ivan V.

2018-02-01

Most of the radiation measurements have been made onboard spacecraft flying along orbits with an inclination of up to 51.6 degrees. Due to the prospect of manned missions at orbits with larger inclinations, it is advisable to conduct preliminary detailed dosimetry measurements at a high-inclination orbit; due to its polar orbit, the Lomonosov satellite provides good opportunities for such study. We chose a method of cosmic radiation dosimetry based on semiconductor detectors. This method is widely used onboard spacecraft, including full-time radiation monitoring onboard the International Space Station (ISS). It should be noted that not only did the charged particles contribute significantly in the dose equivalent, but also did the neutrons. Semiconductor detectors have low sensitivity to neutron radiation and are not sufficient for detecting the expected flux of neutrons. We add a thermal neutron counter to the proposed device in order to provide an opportunity for estimation of neutron flux variations along the satellite trajectory. Thus, the design of the instrument DEPRON (Dosimeter of Electrons, PROtons and Neutrons) was determined. DEPRON is intended for registration of the absorbed doses and linear energy transfer spectra for high-energy electrons, protons and nuclei of space radiation, as well as registration of thermal neutrons. The present paper provides a brief description of the DEPRON instrument. Its calibration results and the first mission results of background radiation measurements are also presented.

Scrubbers with a level head

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pedersen, G.C.; Bhattachararjee, P.K.

1997-11-01

The available methods for removing pollutants from a gas stream are numerous, to say the least. A popular method, scrubbers allow users to separate gases and solids by allowing the gas to come into contact with a liquid stream. In the end, the pollutants are washed away in the effluent, and the gas exits the system to be used in later processes or to be released into the atmosphere. For many years, counter-flow scrubber methods have been used for the lion`s share of the work in industries such as phosphate fertilizer and semiconductor chemicals manufacturing. Now these industries are exploringmore » the use of cross-flow scrubber design, which offers consistently high efficiency and low operating costs. In addition, the unit`s horizontal orientation makes maintenance easier than typical tower scrubbers. For certain classes of unit operations, cross-flow is now being recognized as a strong alternative to conventional counterflow technology.« less

Spectrometric measurements of radioisotope activity in the thyroid

NASA Astrophysics Data System (ADS)

Osko, Jakub; Golnik, Natalia

2008-01-01

The results of measurements of iodine 131I and technetium 99mTc uptake in human thyroid, performed with scintillation or semiconductor detectors can exhibit a considerable uncertainty due to the differences in the thyroid position in the patient's neck. Basic physical laws of radiation attenuation and scattering show that the final shape of the registered spectrum should depends on the thyroid position in the neck and on the thickness of the tissue between the thyroid and the detector. The use of the spectrometric measuring method is proposed in this work for determination of the iodine gathering effective depth. The performed studies showed that the measurements results can be used for improving the accuracy of the iodine 131I activity in thyroid measurements and for selection of the group of patients for whom the anatomical position of the thyroid or the spatial distribution of the iodine gathering is much different than the standard one, assumed during the calibration of the counters. The results of the measurements were in agreement with Monte-Carlo calculations of the detector response. The method was used in routine monitoring of occupationally exposed persons, using the thyroid counter. A group of six persons with measurable internal contamination was selected and the measurements were performed on consecutive days, so the results could be registered at decreasing iodine activities in the thyroid. Larger series of measurements were performed at Brodno Regional Hospital in Warsaw, for a group of 95 patients after diagnostic administration of iodine 131I.

Development and dosimetry of a small animal lung irradiation platform

PubMed Central

McGurk, Ross; Hadley, Caroline; Jackson, Isabel L.; Vujaskovic, Zeljko

2015-01-01

Advances in large scale screening of medical counter measures for radiation-induced normal tissue toxicity are currently hampered by animal irradiation paradigms that are both inefficient and highly variable among institutions. Here, we introduce a novel high-throughput small animal irradiation platform for use in orthovoltage small animal irradiators. We used radiochromic film and metal oxide semiconductor field effect transistor detectors to examine several parameters, including 2D field uniformity, dose rate consistency, and shielding transmission. We posit that this setup will improve efficiency of drug screens by allowing for simultaneous, targeted irradiation of multiple animals, improving efficiency within a single institution. Additionally, we suggest that measurement of the described parameters in all centers conducting counter measure studies will improve the translatability of findings among institutions. We also investigated the use of tissue equivalent phantoms in performing dosimetry measurements for small animal irradiation experiments. Though these phantoms are commonly used in dosimetry, we recorded a significant difference in both the entrance and target tissue dose rates between euthanized rats and mice with implanted detectors and the corresponding phantom measurement. This suggests that measurements using these phantoms may not provide accurate dosimetry for in vivo experiments. Based on these measurements, we propose that this small animal irradiation platform can increase the capacity of animal studies by allowing for more efficient animal irradiation. We also suggest that researchers fully characterize the parameters of whatever radiation setup is in use in order to facilitate better comparison among institutions. PMID:23091878

High-Throughput Sequencing and Copy Number Variation Detection Using Formalin Fixed Embedded Tissue in Metastatic Gastric Cancer

PubMed Central

Hong, Min Eui; Do, In-Gu; Kang, So Young; Ha, Sang Yun; Kim, Seung Tae; Park, Se Hoon; Kang, Won Ki; Choi, Min-Gew; Lee, Jun Ho; Sohn, Tae Sung; Bae, Jae Moon; Kim, Sung; Kim, Duk-Hwan; Kim, Kyoung-Mee

2014-01-01

In the era of targeted therapy, mutation profiling of cancer is a crucial aspect of making therapeutic decisions. To characterize cancer at a molecular level, the use of formalin-fixed paraffin-embedded tissue is important. We tested the Ion AmpliSeq Cancer Hotspot Panel v2 and nCounter Copy Number Variation Assay in 89 formalin-fixed paraffin-embedded gastric cancer samples to determine whether they are applicable in archival clinical samples for personalized targeted therapies. We validated the results with Sanger sequencing, real-time quantitative PCR, fluorescence in situ hybridization and immunohistochemistry. Frequently detected somatic mutations included TP53 (28.17%), APC (10.1%), PIK3CA (5.6%), KRAS (4.5%), SMO (3.4%), STK11 (3.4%), CDKN2A (3.4%) and SMAD4 (3.4%). Amplifications of HER2, CCNE1, MYC, KRAS and EGFR genes were observed in 8 (8.9%), 4 (4.5%), 2 (2.2%), 1 (1.1%) and 1 (1.1%) cases, respectively. In the cases with amplification, fluorescence in situ hybridization for HER2 verified gene amplification and immunohistochemistry for HER2, EGFR and CCNE1 verified the overexpression of proteins in tumor cells. In conclusion, we successfully performed semiconductor-based sequencing and nCounter copy number variation analyses in formalin-fixed paraffin-embedded gastric cancer samples. High-throughput screening in archival clinical samples enables faster, more accurate and cost-effective detection of hotspot mutations or amplification in genes. PMID:25372287

Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

2016-03-01

Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

Measurement of Entrance Surface Dose on an Anthropomorphic Thorax Phantom Using a Miniature Fiber-Optic Dosimeter

PubMed Central

Yoo, Wook Jae; Shin, Sang Hun; Jeon, Dayeong; Hong, Seunghan; Sim, Hyeok In; Kim, Seon Geun; Jang, Kyoung Won; Cho, Seunghyun; Youn, Won Sik; Lee, Bongsoo

2014-01-01

A miniature fiber-optic dosimeter (FOD) system was fabricated using a plastic scintillating fiber, a plastic optical fiber, and a multi-pixel photon counter to measure real-time entrance surface dose (ESD) during radiation diagnosis. Under varying exposure parameters of a digital radiography (DR) system, we measured the scintillating light related to the ESD using the sensing probe of the FOD, which was placed at the center of the beam field on an anthropomorphic thorax phantom. Also, we obtained DR images using a flat panel detector of the DR system to evaluate the effects of the dosimeter on image artifacts during posteroanterior (PA) chest radiography. From the experimental results, the scintillation output signals of the FOD were similar to the ESDs including backscatter simultaneously obtained using a semiconductor dosimeter. We demonstrated that the proposed miniature FOD can be used to measure real-time ESDs with minimization of DR image artifacts in the X-ray energy range of diagnostic radiology. PMID:24694678

Measurement of entrance surface dose on an anthropomorphic thorax phantom using a miniature fiber-optic dosimeter.

PubMed

Yoo, Wook Jae; Shin, Sang Hun; Jeon, Dayeong; Hong, Seunghan; Sim, Hyeok In; Kim, Seon Geun; Jang, Kyoung Won; Cho, Seunghyun; Youn, Won Sik; Lee, Bongsoo

2014-04-01

A miniature fiber-optic dosimeter (FOD) system was fabricated using a plastic scintillating fiber, a plastic optical fiber, and a multi-pixel photon counter to measure real-time entrance surface dose (ESD) during radiation diagnosis. Under varying exposure parameters of a digital radiography (DR) system, we measured the scintillating light related to the ESD using the sensing probe of the FOD, which was placed at the center of the beam field on an anthropomorphic thorax phantom. Also, we obtained DR images using a flat panel detector of the DR system to evaluate the effects of the dosimeter on image artifacts during posteroanterior (PA) chest radiography. From the experimental results, the scintillation output signals of the FOD were similar to the ESDs including backscatter simultaneously obtained using a semiconductor dosimeter. We demonstrated that the proposed miniature FOD can be used to measure real-time ESDs with minimization of DR image artifacts in the X-ray energy range of diagnostic radiology.

Laser guidance of mesoscale particles

NASA Astrophysics Data System (ADS)

Underdown, Frank Hartman, Jr.

Mesoscale particles are guided and trapped in hollow optical fibers using radiation pressure forces. Laser light from a 0.4W, 780nm diode laser is guided in a low- loss fiber mode and used to generate the guidance forces. Laser scattering and absorption forces propels particles along the fiber and polarization gradient forces attract them to the fiber's axial center. Using two counter propagating laser beams, inside the fiber, particles can be trapped in three dimensions. Measuring the spring constant of the trap gives the gradient force. This dissertation describes Rayleigh and Mie scattering models for calculating guidance forces. Calculated forces as a function of particle size and composition (i.e. dielectric, semiconductor, and metals) will be presented. For example, under typical experimental conditions 100nm Au particles are guided by a 2 × 10-14 N propulsive force in a water filled fiber. In comparison, the measured force, obtained from the particle's velocity and Stokes' law, is 7.98 × 10-14 N.

The entangled triplet pair state in acene and heteroacene materials

PubMed Central

Yong, Chaw Keong; Musser, Andrew J.; Bayliss, Sam L.; Lukman, Steven; Tamura, Hiroyuki; Bubnova, Olga; Hallani, Rawad K.; Meneau, Aurélie; Resel, Roland; Maruyama, Munetaka; Hotta, Shu; Herz, Laura M.; Beljonne, David; Anthony, John E.; Clark, Jenny; Sirringhaus, Henning

2017-01-01

Entanglement of states is one of the most surprising and counter-intuitive consequences of quantum mechanics, with potent applications in cryptography and computing. In organic materials, one particularly significant manifestation is the spin-entangled triplet-pair state, which mediates the spin-conserving fission of one spin-0 singlet exciton into two spin-1 triplet excitons. Despite long theoretical and experimental exploration, the nature of the triplet-pair state and inter-triplet interactions have proved elusive. Here we use a range of organic semiconductors that undergo singlet exciton fission to reveal the photophysical properties of entangled triplet-pair states. We find that the triplet pair is bound with respect to free triplets with an energy that is largely material independent (∼30 meV). During its lifetime, the component triplets behave cooperatively as a singlet and emit light through a Herzberg–Teller-type mechanism, resulting in vibronically structured photoluminescence. In photovoltaic blends, charge transfer can occur from the bound triplet pairs with >100% photon-to-charge conversion efficiency. PMID:28699637

Self-adjusting threshold mechanism for pixel detectors

NASA Astrophysics Data System (ADS)

Heim, Timon; Garcia-Sciveres, Maurice

2017-09-01

Readout chips of hybrid pixel detectors use a low power amplifier and threshold discrimination to process charge deposited in semiconductor sensors. Due to transistor mismatch each pixel circuit needs to be calibrated individually to achieve response uniformity. Traditionally this is addressed by programmable threshold trimming in each pixel, but requires robustness against radiation effects, temperature, and time. In this paper a self-adjusting threshold mechanism is presented, which corrects the threshold for both spatial inequality and time variation and maintains a constant response. It exploits the electrical noise as relative measure for the threshold and automatically adjust the threshold of each pixel to always achieve a uniform frequency of noise hits. A digital implementation of the method in the form of an up/down counter and combinatorial logic filter is presented. The behavior of this circuit has been simulated to evaluate its performance and compare it to traditional calibration results. The simulation results show that this mechanism can perform equally well, but eliminates instability over time and is immune to single event upsets.

Dose-dependent X-ray measurements using a 64×64 hybrid GaAs pixel detector with photon counting

NASA Astrophysics Data System (ADS)

Schwarz, C.; Campbell, M.; Goeppert, R.; Ludwig, J.; Mikulec, B.; Rogalla, M.; Runge, K.; Soeldner-Rembold, A.; Smith, K. M.; Snoeys, W.; Watt, J.

2001-03-01

New developments in medical imaging head towards semiconductor detectors flip-chip bonded to CMOS readout chips. In this work, detectors fabricated on SI-GaAs bulk material were bonded to Photon Counting Chips. This PCC consists of a matrix of 64×64 identical square pixels (170 μm×170 μm) with a 15-bit counter in each cell. We investigated the imaging properties of these detector systems under exposure of a dental X-ray tube. First, a dose calibration of the X-ray tube was performed. Fixed pattern noise in flood exposure images was determined for a fixed dose and an image correction method, which uses a gain map, was applied. For characterising the imaging properties, the signal-to-noise ratio (SNR) was calculated as function of exposure dose. Finally, the dynamic range of the system was estimated. Developed in the framework of the MEDIPIX collaboration: CERN, Universities of Freiburg, Glasgow, Naples and Pisa.

The entangled triplet pair state in acene and heteroacene materials

NASA Astrophysics Data System (ADS)

Yong, Chaw Keong; Musser, Andrew J.; Bayliss, Sam L.; Lukman, Steven; Tamura, Hiroyuki; Bubnova, Olga; Hallani, Rawad K.; Meneau, Aurélie; Resel, Roland; Maruyama, Munetaka; Hotta, Shu; Herz, Laura M.; Beljonne, David; Anthony, John E.; Clark, Jenny; Sirringhaus, Henning

2017-07-01

Entanglement of states is one of the most surprising and counter-intuitive consequences of quantum mechanics, with potent applications in cryptography and computing. In organic materials, one particularly significant manifestation is the spin-entangled triplet-pair state, which mediates the spin-conserving fission of one spin-0 singlet exciton into two spin-1 triplet excitons. Despite long theoretical and experimental exploration, the nature of the triplet-pair state and inter-triplet interactions have proved elusive. Here we use a range of organic semiconductors that undergo singlet exciton fission to reveal the photophysical properties of entangled triplet-pair states. We find that the triplet pair is bound with respect to free triplets with an energy that is largely material independent (~30 meV). During its lifetime, the component triplets behave cooperatively as a singlet and emit light through a Herzberg-Teller-type mechanism, resulting in vibronically structured photoluminescence. In photovoltaic blends, charge transfer can occur from the bound triplet pairs with >100% photon-to-charge conversion efficiency.

Design and Implementation of a New Real-Time Frequency Sensor Used as Hardware Countermeasure

PubMed Central

Jiménez-Naharro, Raúl; Gómez-Galán, Juan Antonio; Sánchez-Raya, Manuel; Gómez-Bravo, Fernando; Pedro-Carrasco, Manuel

2013-01-01

A new digital countermeasure against attacks related to the clock frequency is –presented. This countermeasure, known as frequency sensor, consists of a local oscillator, a transition detector, a measurement element and an output block. The countermeasure has been designed using a full-custom technique implemented in an Application-Specific Integrated Circuit (ASIC), and the implementation has been verified and characterized with an integrated design using a 0.35 μm standard Complementary Metal Oxide Semiconductor (CMOS) technology (Very Large Scale Implementation—VLSI implementation). The proposed solution is configurable in resolution time and allowed range of period, achieving a minimum resolution time of only 1.91 ns and an initialization time of 5.84 ns. The proposed VLSI implementation shows better results than other solutions, such as digital ones based on semi-custom techniques and analog ones based on band pass filters, all design parameters considered. Finally, a counter has been used to verify the good performance of the countermeasure in avoiding the success of an attack. PMID:24008285

Fabrication of dye-sensitized solar cell (DSSC) using annato seeds (Bixa orellana Linn)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haryanto, Ditia Allindira; Landuma, Suarni; Purwanto, Agus

2014-02-24

The Fabrication of dye sensitized solar cell (DSSC) using Annato seeds has been conducted in this study. Annato seeds (Bixa orellana Linn) used as a sensitizer for dye sensitized solar cell. The experimental parameter was concentration of natural dye. Annato seeds was extracted using etanol solution and the concentration was controlled by varying mass of Annato seeds. A semiconductor TiO{sub 2} was prepared by a screen printing method for coating glass use paste of TiO{sub 2}. Construction DSSC used layered systems (sandwich) consists of working electrode (TiO{sub 2} semiconductor-dye) and counter electrode (platina). Both are placed on conductive glass andmore » electrolytes that occur electrons cycle. The characterization of thin layer of TiO{sub 2} was conducted using SEM (Scanning Electron Microscpy) analysis showed the surface morphology of TiO{sub 2} thin layer and the cross section of a thin layer of TiO{sub 2} with a thickness of 15–19 μm. Characterization of natural dye extract was determined using UV-Vis spectrometry analysis shows the wavelength range annato seeds is 328–515 nm, and the voltage (V{sub oc}) and electric current (I{sub sc}) resulted in keithley test for 30 gram, 40 gram, and 50 gram were 0,4000 V; 0,4251 V; 0,4502 V and 0,000074 A; 0,000458 A; 0,000857 A, respectively. The efficiencies of the fabricated solar cells using annato seeds as senstizer for each varying mass are 0,00799%, 0,01237%, and 0,05696%.« less

Space and power efficient hybrid counters array

DOEpatents

Gara, Alan G [Mount Kisco, NY; Salapura, Valentina [Chappaqua, NY

2009-05-12

A hybrid counter array device for counting events. The hybrid counter array includes a first counter portion comprising N counter devices, each counter device for receiving signals representing occurrences of events from an event source and providing a first count value corresponding to a lower order bits of the hybrid counter array. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits of the hybrid counter array. A control device monitors each of the N counter devices of the first counter portion and initiates updating a value of a corresponding second count value stored at the corresponding addressable memory location in the second counter portion. Thus, a combination of the first and second count values provide an instantaneous measure of number of events received.

Space and power efficient hybrid counters array

DOEpatents

Gara, Alan G.; Salapura, Valentina

2010-03-30

A hybrid counter array device for counting events. The hybrid counter array includes a first counter portion comprising N counter devices, each counter device for receiving signals representing occurrences of events from an event source and providing a first count value corresponding to a lower order bits of the hybrid counter array. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits of the hybrid counter array. A control device monitors each of the N counter devices of the first counter portion and initiates updating a value of a corresponding second count value stored at the corresponding addressable memory location in the second counter portion. Thus, a combination of the first and second count values provide an instantaneous measure of number of events received.

Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

PubMed

Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

2015-02-17

CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production of free charges that can contribute to the photocurrent in a device. We show that free mobile charges can be efficiently produced via CM in solids of strongly coupled PbSe QDs. Strong electronic coupling between the QDs resulted in a charge carrier mobility of the order of 1 cm(2) V(-1) s(-1). This mobility is sufficiently high so that virtually all electron-hole pairs escape from recombination. The impact of temperature on the CM efficiency in PbSe QD solids was also studied. We inferred that temperature has no observable effect on the rate of cooling of hot charges nor on the CM rate. We conclude that exploitation of CM requires that charges have sufficiently high mobility to escape from recombination. The contribution of CM to the efficiency of photovoltaic devices can be further enhanced by an increase of the CM efficiency above the energetic threshold of twice the band gap. For large-scale applications in photovoltaic devices, it is important to develop abundant and nontoxic materials that exhibit efficient CM.

Diode and method of making the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert

2018-03-13

A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

Distributed performance counters

DOEpatents

Davis, Kristan D; Evans, Kahn C; Gara, Alan; Satterfield, David L

2013-11-26

A plurality of first performance counter modules is coupled to a plurality of processing cores. The plurality of first performance counter modules is operable to collect performance data associated with the plurality of processing cores respectively. A plurality of second performance counter modules are coupled to a plurality of L2 cache units, and the plurality of second performance counter modules are operable to collect performance data associated with the plurality of L2 cache units respectively. A central performance counter module may be operable to coordinate counter data from the plurality of first performance counter modules and the plurality of second performance modules, the a central performance counter module, the plurality of first performance counter modules, and the plurality of second performance counter modules connected by a daisy chain connection.

Integrated optical gyroscopes offering low cost, small size and vibration immunity

NASA Astrophysics Data System (ADS)

Monovoukas, Christos; Swiecki, Andrew; Maseeh, Fariborz

2000-03-01

IntelliSense has developed an integrated optic gyro technology that provides the sensitivity of fiber optic gyros while utilizing batch microfabrication techniques to achieve the low cost of mechanical MEMS gyros. The base technology consists of an optical resonating waveguide chip, sensor electronics and an optical bench. The sensing element is based on an integrated optic waveguide chip in which counter-propagating optical fields are used to sense rotation in the plane of the waveguide through the Sagnac effect. It is powered by a semiconductor laser light source, which is coupled into a waveguide and split into two waveguide arms. Both signals are probed through the out coupled light at each waveguide arm, and rate information is derived from the difference in phase between these two signals. Measuring angular rotation is important for proper operation of a variety of systems such as: missile guidance systems, satellites, energy exploration, camera stabilization, robotics positioning, platform stabilization and space craft guidance to mention a few. This technology overcomes the limitations that previous commercially available gyros for this purpose have had including limitations in size, sensitivity, durability, and premium price.

Development of a beta-spectrometer using PIPS technology

PubMed

Courti; Goutelard; Burger; Blotin

2000-07-01

Various anthropogenic sources contribute to the inventory of long live beta-emitters in the environment. Studies have been carried out to obtain the 90Sr distribution in environment in order to estimate its impact in terms of radiation exposure to humans. The Laboratory routinely measures 90Sr by proportional counter after radiochemistry. An incomplete radiochemical separation leads to a deposit submitted to count polluted by natural beta-emitters. In order to confirm the result, 90Y (daughter of 90Sr), is extracted from the final radiochemical fraction and counted. The 90Y decreasing (T(1/2) = 2.67 days) is checked by successive counts over 64 h. The delay between the end of radiochemistry and the counting is imposed by 15 days to allow radioactive equilibrium between 90Sr and 90Y to be established. In order to remove this delay the purity of the 90Sr fraction source can be verified by beta-spectrometry. Thus, a beta-spectrometer is under development in collaboration with Canberra Semi-Conductor and Canberra Electronic. It consists in a PIPS detector where several silicon layers are combined. Initial results will be presented in this paper.

Improved non-destructive method for 90Sr activity determination in aqueous solutions using Monte Carlo simulation.

PubMed

Samardžić, Selena; Milošević, Miodrag; Todorović, Nataša; Lakatoš, Robert

2018-04-04

The development of new methods and improvements of existing methods for the specific activity determination of 90 Sr and other distinct beta emitters has been of considerable interest. The reason for this interest is that the notably small number of methods that are able to meet all the set criteria, such as reliability of the results, measurement uncertainty and time, and minimum production of radioactive waste, as well as applicability to various samples with reference to their nature, geometry and composition. In this paper, two methods for rapid 90 Sr activity determination based on Monte Carlo simulations are used, one for a Si semiconductor detector for beta spectrometric measurements and the other for the Geiger-Muller (GM) ionization probe. To improve the reliability of the measurement results, samples with high and low strontium activity solutions were prepared in the form of dry residues. The results of the proposed methodology were verified with a standard method using a liquid scintillation counter, and notably good agreements are achieved. Copyright © 2018 Elsevier Ltd. All rights reserved.

Effect of sintering temperatures and screen printing types on TiO2 layers in DSSC applications

NASA Astrophysics Data System (ADS)

Supriyanto, Agus; Furqoni, Lutfi; Nurosyid, Fahru; Hidayat, Jojo; Suryana, Risa

2016-03-01

Dye-Sensitized Solar Cell (DSSC) is a candidate solar cell, which has a big potential in the future due to its eco-friendly material. This research is conducted to study the effect of sintering temperature and the type of screen-printing toward the characteristics of TiO2 layer as a working electrode in DSSC. TiO2 layers were fabricated using a screen-printing method with a mesh size of T-49, T-55, and T-61. TiO2 layers were sintered at temperatures of 600°C and 650°C for 60 min. DSSC structure was composed of TiO2 as semiconductors, ruthenium complex as dyes, and carbon as counter electrodes. The morphology of TiO2 layer was observed by using Nikon E2 Digital Camera Microscopy. The efficiencies of DSSC were calculated from the I-V curves. The highest efficiency is 0.015% at TiO2 layer fabricated with screen type T-61 and at a sintering temperature of 650°C.

Counter-responses as organizers in adolescent analysis and therapy.

PubMed

Richmond, M Barrie

2004-01-01

The author introduces Counter-response as a phenomological term to replace theory-burdened terms like counter-transference, counter-identification, and counter-resistance. He discusses the analyst's use of self (drawing on the comparison with Winnicott's use of the object) in processing the expectable destabilizing counter-reactions that occur in working therapeutically with disturbed adolescents and their parents. Further; he discusses the counter-reaction to the patient's narrative, acting-out, and how re-enactments can serve as an organizer for understanding the patient's inner life when the analyst formulates his/her counter-response. Emphasis is placed on the therapist forming his or her own narrative with the adolescent that takes into account the evoked counter-reaction. For this purpose, the author recommends the use of a combined counter-response and metaphor-orienting perspective to acknowledge and work with the denial, illusions, reversal of perspective, and catastrophic anxieties experienced with these adolescents. The counter-response perspective permits the emergence of the disturbed adolescent's novel narrative; however, since these experiences can be destabilizing or disruptive, the author also recommends the use of a personal metaphor to anticipate the reluctance to examining, processing, and formulating the analyst's dysphoric counter-reaction. With the use of the counter-response, the analyst's therapeutic ideal is to achieve a more optimal balance between using accepted narrative theories and exploring novel enactment experiences. His swimming metaphor stratagem is designed to keep the analyst in these difficult encounters.

An occupational exposure assessment for engineered nanoparticles used in semiconductor fabrication.

PubMed

Shepard, Michele Noble; Brenner, Sara

2014-03-01

Engineered nanoparticles of alumina, amorphous silica, and ceria are used in semiconductor device fabrication during wafer polishing steps referred to as 'chemical mechanical planarization' (CMP). Some metal oxide nanoparticles can impact the biological response of cells and organ systems and may cause adverse health effects; additional research is necessary to better understand potential risks from nanomaterial applications and occupational exposure scenarios. This study was conducted to assess potential airborne exposures to nanoparticles and agglomerates using direct-reading instruments and filter-based samples to characterize workplace aerosols by particle number, mass, size, composition, and morphology. Sampling was repeated for tasks in three work areas (fab, subfab, wastewater treatment) at a facility using engineered nanoparticles for CMP. Real-time measurements were collected using a condensation particle counter (CPC), optical particle counter, and scanning mobility particle spectrometer (SMPS). Filter-based samples were analyzed for total mass or the respirable fraction, and for specific metals of interest. Additional air sample filters were analyzed by transmission electron microscopy with energy dispersive x-ray spectroscopy (TEM/EDX) for elemental identification and to provide data on particle size, morphology, and concentration. Peak concentrations measured on the CPC ranged from 1 to 16 particles per cubic centimeter (P cm(-3)) for background and from 4 to 74 P cm(-3) during tasks sampled in the fab; from 1 to 60 P cm(-3) for background and from 3 to 84 P cm(-3) for tasks sampled in the subfab; and from 1160 to 45 894 P cm(-3) for background and from 1710 to 45 519 P cm(-3) during wastewater treatment system filter change tasks. Significant variability was seen among the repeated task measurements and among background comparisons in each area. Several data analysis methods were used to compare each set of task and background measurements. Increased concentrations of respirable particles were identified for some tasks sampled in each work area, although of relatively low magnitude and inconsistently among repeated measurements for specific tasks. Measurements with a portable SMPS indicated that nanoparticle number concentrations (channels 11.5-115.5nm) increased above background levels by 3.2 P cm(-3) during CMP tool set-up in the fab area but were not elevated when changing filters for the CMP wastewater treatment system. All results from mass concentration analysis were below the limits of detection. Characterization by TEM/EDX identified structures containing the elements of interest (Al, Si), primarily as agglomerates or aggregates in the 100-1000nm size range. Although health-based occupational exposure limits have not been established for nanoscale alumina, silica, or ceria, the measured concentrations by number and mass were below currently proposed benchmarks or reference values for poorly soluble low-toxicity nanoparticles.

Modular high speed counter employing edge-triggered code

DOEpatents

Vanstraelen, Guy F.

1993-06-29

A high speed modular counter (100) utilizing a novel counting method in which the first bit changes with the frequency of the driving clock, and changes in the higher order bits are initiated one clock pulse after a "0" to "1" transition of the next lower order bit. This allows all carries to be known one clock period in advance of a bit change. The present counter is modular and utilizes two types of standard counter cells. A first counter cell determines the zero bit. The second counter cell determines any other higher order bit. Additional second counter cells are added to the counter to accommodate any count length without affecting speed.

Modular high speed counter employing edge-triggered code

DOEpatents

Vanstraelen, G.F.

1993-06-29

A high speed modular counter (100) utilizing a novel counting method in which the first bit changes with the frequency of the driving clock, and changes in the higher order bits are initiated one clock pulse after a 0'' to 1'' transition of the next lower order bit. This allows all carries to be known one clock period in advance of a bit change. The present counter is modular and utilizes two types of standard counter cells. A first counter cell determines the zero bit. The second counter cell determines any other higher order bit. Additional second counter cells are added to the counter to accommodate any count length without affecting speed.

Liquid Scintillation Counting - Packard Triple-Label Calibration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torretto, P. A.

2017-03-23

The Radiological Measurements Laboratory (RML) maintains and operates nine Packard Liquid Scintillation Counters (LSCs). These counters were obtained through various sources and were generally purchased as 2500, 2700 or 3100 series counters. In 2004/2005 the software and firmware on the counters were upgraded. The counters are now designated as 3100 series counters running the Quantasmart software package. Thus, a single procedure can be used to calibrate and operate the Packard LSCs.

Counter design influences the privacy of patients in health care.

PubMed

Mobach, Mark P

2009-03-01

A re-furnishing of counter areas in primary health care was used to assess patient privacy and its influences on the nature of conversations in a controlled experiment. Patients in two community-based pharmacies in the Netherlands were assigned to enclosed counters and a queue at distance, or to counters that exposed patients mutually and a closer queue. Patients assigned to counters with reduced sight were more satisfied with the privacy than patients at visually exposed counters. However, in comparison with visually exposed pharmacy counters, conversations of patients at enclosed counters could still be overheard and did not have different conversations to other patients. Architectural design of health-care institutions has potential to positively influence perceived patient privacy in areas in where multiple patient-staff communications routinely occur and where patient privacy is an important issue, but enclosed counters with a queue at distance do not prevent incidental disclosure of individually identifiable health information.

Performing a local barrier operation

DOEpatents

Archer, Charles J; Blocksome, Michael A; Ratterman, Joseph D; Smith, Brian E

2014-03-04

Performing a local barrier operation with parallel tasks executing on a compute node including, for each task: retrieving a present value of a counter; calculating, in dependence upon the present value of the counter and a total number of tasks performing the local barrier operation, a base value, the base value representing the counter's value prior to any task joining the local barrier; calculating, in dependence upon the base value and the total number of tasks performing the local barrier operation, a target value of the counter, the target value representing the counter's value when all tasks have joined the local barrier; joining the local barrier, including atomically incrementing the value of the counter; and repetitively, until the present value of the counter is no less than the target value of the counter: retrieving the present value of the counter and determining whether the present value equals the target value.

Performing a local barrier operation

DOEpatents

Archer, Charles J; Blocksome, Michael A; Ratterman, Joseph D; Smith, Brian E

2014-03-04

Performing a local barrier operation with parallel tasks executing on a compute node including, for each task: retrieving a present value of a counter; calculating, in dependence upon the present value of the counter and a total number of tasks performing the local barrier operation, a base value of the counter, the base value representing the counter's value prior to any task joining the local barrier; calculating, in dependence upon the base value and the total number of tasks performing the local barrier operation, a target value, the target value representing the counter's value when all tasks have joined the local barrier; joining the local barrier, including atomically incrementing the value of the counter; and repetitively, until the present value of the counter is no less than the target value of the counter: retrieving the present value of the counter and determining whether the present value equals the target value.

Sign-And-Magnitude Up/Down Counter

NASA Technical Reports Server (NTRS)

Cole, Steven W.

1991-01-01

Magnitude-and-sign counter includes conventional up/down counter for magnitude part and special additional circuitry for sign part. Negative numbers indicated more directly. Counter implemented by programming erasable programmable logic device (EPLD) or programmable logic array (PLA). Used in place of conventional up/down counter to provide sign and magnitude values directly to other circuits.

Low latency counter event indication

DOEpatents

Gara, Alan G [Mount Kisco, NY; Salapura, Valentina [Chappaqua, NY

2008-09-16

A hybrid counter array device for counting events with interrupt indication includes a first counter portion comprising N counter devices, each for counting signals representing event occurrences and providing a first count value representing lower order bits. An overflow bit device associated with each respective counter device is additionally set in response to an overflow condition. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits. An operatively coupled control device monitors each associated overflow bit device and initiates incrementing a second count value stored at a corresponding memory location in response to a respective overflow bit being set. The incremented second count value is compared to an interrupt threshold value stored in a threshold register, and, when the second counter value is equal to the interrupt threshold value, a corresponding "interrupt arm" bit is set to enable a fast interrupt indication. On a subsequent roll-over of the lower bits of that counter, the interrupt will be fired.

Low latency counter event indication

DOEpatents

Gara, Alan G.; Salapura, Valentina

2010-08-24

A hybrid counter array device for counting events with interrupt indication includes a first counter portion comprising N counter devices, each for counting signals representing event occurrences and providing a first count value representing lower order bits. An overflow bit device associated with each respective counter device is additionally set in response to an overflow condition. The hybrid counter array includes a second counter portion comprising a memory array device having N addressable memory locations in correspondence with the N counter devices, each addressable memory location for storing a second count value representing higher order bits. An operatively coupled control device monitors each associated overflow bit device and initiates incrementing a second count value stored at a corresponding memory location in response to a respective overflow bit being set. The incremented second count value is compared to an interrupt threshold value stored in a threshold register, and, when the second counter value is equal to the interrupt threshold value, a corresponding "interrupt arm" bit is set to enable a fast interrupt indication. On a subsequent roll-over of the lower bits of that counter, the interrupt will be fired.

GAMMA PROPORTIONAL COUNTER CONTAINING HIGH Z GAS AND LOW Z MODERATOR

DOEpatents

Fox, R.

1963-07-23

A gamma radiation counter employing a gas proportional counter is described. The radiation counter comprises a cylindrical gas proportional counter which contains a high atomic number gas and is surrounded by a low atomic number gamma radiation moderator material. At least one slit is provided in the moderator to allow accident gamma radiation to enter the moderator in the most favorable manner for moderation, and also to allow low energy gamma radiation to enter the counter without the necessity of passing through the moderator. This radiation counter is capable of detecting and measuring gamma radiation in the energy range of 0.5-5 Mev. (AEC)

Method of producing strained-layer semiconductor devices via subsurface-patterning

DOEpatents

Dodson, Brian W.

1993-01-01

A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.

75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-13

... Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical... October 1, 2009, applicable to workers of Freescale Semiconductor, Inc., Technical Information Center..., Massachusetts location of Freescale Semiconductor, Inc., Technical Information Center. The intent of the...

Proportional counter radiation camera

DOEpatents

Borkowski, C.J.; Kopp, M.K.

1974-01-15

A gas-filled proportional counter camera that images photon emitting sources is described. A two-dimensional, positionsensitive proportional multiwire counter is provided as the detector. The counter consists of a high- voltage anode screen sandwiched between orthogonally disposed planar arrays of multiple parallel strung, resistively coupled cathode wires. Two terminals from each of the cathode arrays are connected to separate timing circuitry to obtain separate X and Y coordinate signal values from pulse shape measurements to define the position of an event within the counter arrays which may be recorded by various means for data display. The counter is further provided with a linear drift field which effectively enlarges the active gas volume of the counter and constrains the recoil electrons produced from ionizing radiation entering the counter to drift perpendicularly toward the planar detection arrays. A collimator is interposed between a subject to be imaged and the counter to transmit only the radiation from the subject which has a perpendicular trajectory with respect to the planar cathode arrays of the detector. (Official Gazette)

Optically switched graphene/4H-SiC junction bipolar transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandrashekhar, MVS; Sudarshan, Tangali S.; Omar, Sabih U.

A bi-polar device is provided, along with methods of making the same. The bi-polar device can include a semiconductor substrate doped with a first dopant, a semiconductor layer on the first surface of the semiconductor substrate, and a Schottky barrier layer on the semiconductor layer. The method of forming a bi-polar device can include: forming a semiconductor layer on a first surface of a semiconductor substrate, where the semiconductor substrate comprises a first dopant and where the semiconductor layer comprises a second dopant that has an opposite polarity than the first dopant; and forming a Schottky barrier layer on amore » first portion of the semiconductor layer while leaving a second portion of the semiconductor layer exposed.« less

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

DOEpatents

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

Chemical abundances of cosmic rays greater than 4.5 GV measured with a large area proportional counter-scintillation counter stack

NASA Technical Reports Server (NTRS)

Lheureux, J.; Fan, C. Y.; Mainardi, R.; Gloeckler, G.

1974-01-01

A 6500 sq cm-ster cosmic-ray detector consisting of 12 gas counter trays sandwiched between two large-area circular scintillation counters was flown from Palestine, Texas in November 1972 to study the composition of primary particles greater than 1.5 GeV/nucleon in the charge range from 3 to 30. For each analyzed event, the particle trajectory was recorded, using four 20-wire proportional counter trays. Also recorded were the energy loss in each of the solid counters and the dE/dx losses in each of the 12 gas counters. The large dynamic range of the detector is established by operating six of the gas counters in the ionization mode. A description of the instrument and some preliminary results are given.

Chemical abundances of cosmic rays greater than 4.5 GV measured with a large area proportional counter-scintillation counter stack

NASA Technical Reports Server (NTRS)

Lheureux, J.; Fan, C. Y.; Gloeckler, G.; Mainardi, R.

1973-01-01

A 6500 sq cm-ster cosmic ray detector consisting of twelve gas counter trays sandwiched between two large area circular scintillation counters was flown from Palestine, Texas in November of 1972 to study the composition of primary particles 1.5 GeV/nucleon in the charge range 3 to 30. For each analyzed event, a recording was made of (1) the particle trajectory using four 20 wire proportional counter trays, (2) the energy loss in each of the solid counters, and (3) the dE/dx losses in each of the twelve gas counters. The large dynamic range of the detector is established by operating six of the gas counters in the ionization mode. A description of the instrument and some preliminary results are given.

Electric field induced spin-polarized current

DOEpatents

Murakami, Shuichi; Nagaosa, Naoto; Zhang, Shoucheng

2006-05-02

A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

High resolution energy-sensitive digital X-ray

DOEpatents

Nygren, David R.

1995-01-01

An apparatus and method for detecting an x-ray and for determining the depth of penetration of an x-ray into a semiconductor strip detector. In one embodiment, a semiconductor strip detector formed of semiconductor material is disposed in an edge-on orientation towards an x-ray source such that x-rays From the x-ray source are incident upon and substantially perpendicular to the front edge of the semiconductor strip detector. The semiconductor strip detector is formed of a plurality of segments. The segments are coupled together in a collinear arrangement such that the semiconductor strip detector has a length great enough such that substantially all of the x-rays incident on the front edge of the semiconductor strip detector interact with the semiconductor material which forms the semiconductor strip detector. A plurality of electrodes are connected to the semiconductor strip detect or such that each one of the of semiconductor strip detector segments has at least one of the of electrodes coupled thereto. A signal processor is also coupled to each one of the electrodes. The present detector detects an interaction within the semiconductor strip detector, between an x-ray and the semiconductor material, and also indicates the depth of penetration of the x-ray into the semiconductor strip detector at the time of the interaction.

High resolution energy-sensitive digital X-ray

DOEpatents

Nygren, D.R.

1995-07-18

An apparatus and method for detecting an x-ray and for determining the depth of penetration of an x-ray into a semiconductor strip detector. In one embodiment, a semiconductor strip detector formed of semiconductor material is disposed in an edge-on orientation towards an x-ray source such that x-rays from the x-ray source are incident upon and substantially perpendicular to the front edge of the semiconductor strip detector. The semiconductor strip detector is formed of a plurality of segments. The segments are coupled together in a collinear arrangement such that the semiconductor strip detector has a length great enough such that substantially all of the x-rays incident on the front edge of the semiconductor strip detector interact with the semiconductor material which forms the semiconductor strip detector. A plurality of electrodes are connected to the semiconductor strip detector such that each one of the semiconductor strip detector segments has at least one of the of electrodes coupled thereto. A signal processor is also coupled to each one of the electrodes. The present detector detects an interaction within the semiconductor strip detector, between an x-ray and the semiconductor material, and also indicates the depth of penetration of the x-ray into the semiconductor strip detector at the time of the interaction. 5 figs.

Multithreading in vector processors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evangelinos, Constantinos; Kim, Changhoan; Nair, Ravi

In one embodiment, a system includes a processor having a vector processing mode and a multithreading mode. The processor is configured to operate on one thread per cycle in the multithreading mode. The processor includes a program counter register having a plurality of program counters, and the program counter register is vectorized. Each program counter in the program counter register represents a distinct corresponding thread of a plurality of threads. The processor is configured to execute the plurality of threads by activating the plurality of program counters in a round robin cycle.

Hardware support for software controlled fast multiplexing of performance counters

DOEpatents

Salapura, Valentina; Wisniewski, Robert W

2013-10-01

Performance counters may be operable to collect one or more counts of one or more selected activities, and registers may be operable to store a set of performance counter configurations. A state machine may be operable to automatically select a register from the registers for reconfiguring the one or more performance counters in response to receiving a first signal. The state machine may be further operable to reconfigure the one or more performance counters based on a configuration specified in the selected register. The state machine yet further may be operable to copy data in selected one or more of the performance counters to a memory location, or to copy data from the memory location to the counters, in response to receiving a second signal. The state machine may be operable to store or restore the counter values and state machine configuration in response to a context switch event.

Hardware support for software controlled fast multiplexing of performance counters

DOEpatents

Salapura, Valentina; Wisniewski, Robert W.

2013-01-01

Performance counters may be operable to collect one or more counts of one or more selected activities, and registers may be operable to store a set of performance counter configurations. A state machine may be operable to automatically select a register from the registers for reconfiguring the one or more performance counters in response to receiving a first signal. The state machine may be further operable to reconfigure the one or more performance counters based on a configuration specified in the selected register. The state machine yet further may be operable to copy data in selected one or more of the performance counters to a memory location, or to copy data from the memory location to the counters, in response to receiving a second signal. The state machine may be operable to store or restore the counter values and state machine configuration in response to a context switch event.

Tobacco counter-advertising: a review of the literature and a conceptual model for understanding effects.

PubMed

Agostinelli, Gina; Grube, Joel W

2003-01-01

The tobacco counter-advertising literature is reviewed as it relates to basic process questions concerning what makes counter-advertisements effective. Limitations in addressing (a) counter-advertisement content and the psychological mediators targeted, (b) counter-advertisement style and the affective reactions targeted, (c) prior smoking experience, and (d) other audience factors are enumerated. A theoretical model based on alcohol advertising research is presented to address those limitations. The model addresses the practical research question of predicting when tobacco counter-advertising will work by examining the independent influence of each of these enumerated factors, as well as how these factors operate in concert, qualifying each other. The model also addresses the process question of explaining how counter-advertising works by identifying affective and cognitive processes as mediators. By understanding the processes that underlie the qualified findings, one can better advise the designers of tobacco counter-advertisements how to be more effective.

The influence of different modified graphene on property of DSSCs

NASA Astrophysics Data System (ADS)

Xu, Kai; Shen, Yue; Zhang, Zongkun; Cao, Meng; Gu, Feng; Wang, Linjun

2016-01-01

Two kinds of modified reduced graphene oxide (rGO) power with different hydrophilic property were synthesized in NH3/hydrazine hydrate (N-rGO) and KOH/hydrazine hydrate (K-rGO) reduction systems, respectively, and be used as counter electrode materials. The as-prepared rGO counter electrodes were confirmed as substitution for Pt counter electrode in dye-sensitized solar cells (DSSCs). The efficiency (η) of DSSCs based on N-rGO counter electrodes achieved 4.72% while that of K-rGO counter electrode was just 3.38%. The electrochemical impedance spectroscopy (EIS) measurements revealed that the hydrophilic K-rGO counter electrode has a low charge transfer resistance (Rct) and the hydrophobic N-rGO counter electrode has a low series resistance (Rs).

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOEpatents

Weiss, Shimon [Pinole, CA; Bruchez, Jr., Marcel; Alivisatos, Paul [Oakland, CA

2008-01-01

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Nanopatterned conductive polymer films as a Pt, TCO-free counter electrode for low-cost dye-sensitized solar cells.

PubMed

Kwon, Jeong; Ganapathy, Veerappan; Kim, Young Hun; Song, Kyung-Deok; Park, Hong-Gyu; Jun, Yongseok; Yoo, Pil J; Park, Jong Hyeok

2013-09-07

A low-cost nanopatterned highly conductive poly(3,4-ethylenedioxythiophene) (PEDOT) thin film was fabricated on a flexible plastic substrate via a chemical polymerization method combined with a nanoimprinting technique and used as a platinum (Pt), TCO-free counter electrode for dye-sensitized solar cells (DSSCs). The catalytic properties of the nanopatterned PEDOT as the counter electrode in DSSCs were studied using cyclic voltammetry, J-V measurements, impedance spectroscopy, and finite-difference time-domain (FDTD) simulations. The nanopatterned PEDOT counter electrodes exhibit better functionality as a counter electrode for tri-iodide reduction when compared to non-patterned PEDOT-based counter electrodes. The Pt and TCO-free DSSCs with a nanopatterned PEDOT-based counter electrode exhibited a power conversion efficiency of 7.1% under one sunlight illumination (100 mW cm(-2)), which is comparable to that of conventional DSSCs with standard platinum Pt/FTO paired counter electrodes. The ability to modulate catalytic functionality with changes in nanoscale morphology represents a promising route for developing new counter electrodes of Pt and TCO-free DSSCs.

Drug Safety - Multiple Languages

MedlinePlus

... Expand Section Guide to Over the Counter Medications - English PDF Guide to Over the Counter Medications - Amarɨñña / ... Information Translations Guide to Over the Counter Medications - English PDF Guide to Over the Counter Medications - العربية ( ...

2014 Center for Army Leadership Annual Survey of Army Leadership (CASAL): Military Leader Findings

DTIC Science & Technology

2015-09-22

allowed to learn from honest mistakes. Counter- productive Leadership The presence of counter- productive or negative leadership behaviors in the Army...more counter- productive than productive behaviors. This low rate is the same observed in 2013. CASAL results continue to show that counter- productive ...leadership behaviors are strongly associated with lower levels of cohesion, discipline and trust. Leaders who demonstrate counter- productive

Redundant operation of counter modules

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1980-01-01

A technique for the redundant operation of counter modules is described. Redundant operation is maintained by detecting the zero state of each counter and clearing the other to that state, thus periodically resynchronizing the counters, and obtaining an output from both counters through AC coupled diode-OR gates. Redundant operation of counter flip flops is maintained in a similar manner, and synchronous operation of redundant squarewave clock generators of the feedback type is effected by connecting together the feedback inputs of the squarewave generators through a coupling resistor, and obtaining an output from both generators through AC coupled diode-OR gates.

Semiconductor structure and recess formation etch technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching processmore » stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.« less

Method of making photovoltaic cell

DOEpatents

Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

2017-06-20

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

Optical orientation in ferromagnet/semiconductor hybrids

NASA Astrophysics Data System (ADS)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Effect of sintering temperatures and screen printing types on TiO{sub 2} layers in DSSC applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Supriyanto, Agus; Furqoni, Lutfi; Nurosyid, Fahru, E-mail: nurosyid@yahoo.com

2016-03-29

Dye-Sensitized Solar Cell (DSSC) is a candidate solar cell, which has a big potential in the future due to its eco-friendly material. This research is conducted to study the effect of sintering temperature and the type of screen-printing toward the characteristics of TiO{sub 2} layer as a working electrode in DSSC. TiO{sub 2} layers were fabricated using a screen-printing method with a mesh size of T-49, T-55, and T-61. TiO{sub 2} layers were sintered at temperatures of 600°C and 650°C for 60 min. DSSC structure was composed of TiO{sub 2} as semiconductors, ruthenium complex as dyes, and carbon as counter electrodes.more » The morphology of TiO{sub 2} layer was observed by using Nikon E2 Digital Camera Microscopy. The efficiencies of DSSC were calculated from the I-V curves. The highest efficiency is 0.015% at TiO{sub 2} layer fabricated with screen type T-61 and at a sintering temperature of 650°C.« less

Design of an Elliptic Curve Cryptography processor for RFID tag chips.

PubMed

Liu, Zilong; Liu, Dongsheng; Zou, Xuecheng; Lin, Hui; Cheng, Jian

2014-09-26

Radio Frequency Identification (RFID) is an important technique for wireless sensor networks and the Internet of Things. Recently, considerable research has been performed in the combination of public key cryptography and RFID. In this paper, an efficient architecture of Elliptic Curve Cryptography (ECC) Processor for RFID tag chip is presented. We adopt a new inversion algorithm which requires fewer registers to store variables than the traditional schemes. A new method for coordinate swapping is proposed, which can reduce the complexity of the controller and shorten the time of iterative calculation effectively. A modified circular shift register architecture is presented in this paper, which is an effective way to reduce the area of register files. Clock gating and asynchronous counter are exploited to reduce the power consumption. The simulation and synthesis results show that the time needed for one elliptic curve scalar point multiplication over GF(2163) is 176.7 K clock cycles and the gate area is 13.8 K with UMC 0.13 μm Complementary Metal Oxide Semiconductor (CMOS) technology. Moreover, the low power and low cost consumption make the Elliptic Curve Cryptography Processor (ECP) a prospective candidate for application in the RFID tag chip.

Design of an Elliptic Curve Cryptography Processor for RFID Tag Chips

PubMed Central

Liu, Zilong; Liu, Dongsheng; Zou, Xuecheng; Lin, Hui; Cheng, Jian

2014-01-01

Radio Frequency Identification (RFID) is an important technique for wireless sensor networks and the Internet of Things. Recently, considerable research has been performed in the combination of public key cryptography and RFID. In this paper, an efficient architecture of Elliptic Curve Cryptography (ECC) Processor for RFID tag chip is presented. We adopt a new inversion algorithm which requires fewer registers to store variables than the traditional schemes. A new method for coordinate swapping is proposed, which can reduce the complexity of the controller and shorten the time of iterative calculation effectively. A modified circular shift register architecture is presented in this paper, which is an effective way to reduce the area of register files. Clock gating and asynchronous counter are exploited to reduce the power consumption. The simulation and synthesis results show that the time needed for one elliptic curve scalar point multiplication over GF(2163) is 176.7 K clock cycles and the gate area is 13.8 K with UMC 0.13 μm Complementary Metal Oxide Semiconductor (CMOS) technology. Moreover, the low power and low cost consumption make the Elliptic Curve Cryptography Processor (ECP) a prospective candidate for application in the RFID tag chip. PMID:25264952

Ferroelectric polarization induces electronic nonlinearity in ion-doped conducting polymers

PubMed Central

Fabiano, Simone; Sani, Negar; Kawahara, Jun; Kergoat, Loïg; Nissa, Josefin; Engquist, Isak; Crispin, Xavier; Berggren, Magnus

2017-01-01

Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is an organic mixed ion-electron conducting polymer. The PEDOT phase transports holes and is redox-active, whereas the PSS phase transports ions. When PEDOT is redox-switched between its semiconducting and conducting state, the electronic and optical properties of its bulk are controlled. Therefore, it is appealing to use this transition in electrochemical devices and to integrate those into large-scale circuits, such as display or memory matrices. Addressability and memory functionality of individual devices, within these matrices, are typically achieved by nonlinear current-voltage characteristics and bistability—functions that can potentially be offered by the semiconductor-conductor transition of redox polymers. However, low conductivity of the semiconducting state and poor bistability, due to self-discharge, make fast operation and memory retention impossible. We report that a ferroelectric polymer layer, coated along the counter electrode, can control the redox state of PEDOT. The polarization switching characteristics of the ferroelectric polymer, which take place as the coercive field is overcome, introduce desired nonlinearity and bistability in devices that maintain PEDOT in its highly conducting and fast-operating regime. Memory functionality and addressability are demonstrated in ferro-electrochromic display pixels and ferro-electrochemical transistors. PMID:28695197

Bi2S3microspheres grown on graphene sheets as low-cost counter-electrode materials for dye-sensitized solar cells.

PubMed

Li, Guang; Chen, Xiaoshuang; Gao, Guandao

2014-03-21

In this work, we synthesized 3D Bi2S3 microspheres comprised of nanorods grown along the (211) facet on graphene sheets by a solvothermal route, and investigated its catalytic activities through I-V curves and conversion efficiency tests as the CE in DSSCs. Although the (211) facet has a large band gap for a Bi2S3 semiconductor, owing to the introduction of graphene into the system, its short-circuit current density, open-circuit voltage, fill factor, and efficiency were Jsc = 12.2 mA cm(-2), Voc = 0.75 V, FF = 0.60, and η = 5.5%, respectively. By integrating it with graphene sheets, our material achieved the conversion efficiency of 5.5%, which is almost triple the best conversion efficiency value of the DSSCs with (211)-faceted 3D Bi2S3 without graphene (1.9%) reported in the latest literature. Since this conversion-efficient 3D material grown on the graphene sheets significantly improves its catalytic properties, it paves the way for designing and applying low-cost Pt-free CE materials in DSSC from inorganic nanostructures.

Design of frequency-encoded data-based optical master-slave-JK flip-flop using polarization switch

NASA Astrophysics Data System (ADS)

Mandal, Sumana; Mandal, Dhoumendra; Mandal, Mrinal Kanti; Garai, Sisir Kumar

2017-06-01

An optical data processing and communication system provides enormous potential bandwidth and a very high processing speed, and it can fulfill the demands of the present generation. For an optical computing system, several data processing units that work in the optical domain are essential. Memory elements are undoubtedly essential to storing any information. Optical flip-flops can store one bit of optical information. From these flip-flop registers, counters can be developed. Here, the authors proposed an optical master-slave (MS)-JK flip-flop with the help of two-input and three-input optical NAND gates. Optical NAND gates have been developed using semiconductor optical amplifiers (SOAs). The nonlinear polarization switching property of an SOA has been exploited here, and it acts as a polarization switch in the proposed scheme. A frequency encoding technique is adopted for representing data. A specific frequency of an optical signal represents a binary data bit. This technique of data representation is helpful because frequency is the fundamental property of a signal, and it remains unaltered during reflection, refraction, absorption, etc. throughout the data propagation. The simulated results enhance the admissibility of the scheme.

Visualizing electron dynamics in organic materials: Charge transport through molecules and angular resolved photoemission

NASA Astrophysics Data System (ADS)

Kümmel, Stephan

Being able to visualize the dynamics of electrons in organic materials is a fascinating perspective. Simulations based on time-dependent density functional theory allow to realize this hope, as they visualize the flow of charge through molecular structures in real-space and real-time. We here present results on two fundamental processes: Photoemission from organic semiconductor molecules and charge transport through molecular structures. In the first part we demonstrate that angular resolved photoemission intensities - from both theory and experiment - can often be interpreted as a visualization of molecular orbitals. However, counter-intuitive quantum-mechanical electron dynamics such as emission perpendicular to the direction of the electrical field can substantially alter the picture, adding surprising features to the molecular orbital interpretation. In a second study we calculate the flow of charge through conjugated molecules. The calculations show in real time how breaks in the conjugation can lead to a local buildup of charge and the formation of local electrical dipoles. These can interact with neighboring molecular chains. As a consequence, collections of ''molecular electrical wires'' can show distinctly different characteristics than ''classical electrical wires''. German Science Foundation GRK 1640.

Fabrication of Metallic Hollow Nanoparticles

NASA Technical Reports Server (NTRS)

Lillehei, Peter T. (Inventor); Chu, Sang-Hyon (Inventor); Park, Yeonjoon (Inventor); Kim, Jae-Woo (Inventor); Choi, Sr., Sang H. (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

2016-01-01

Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH.sub.4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.

An investigation of high-multiplicity gamma events in pp collisions with c.m. energies between 22 and 62 GeV

NASA Technical Reports Server (NTRS)

Dell, G. F.; Uto, H.; Yuan, L. C. L.; Amaldi, E.; Beneventano, M.; Borgia, B.; Pistilli, P.; Sestili, I.; Dooher, J.

1976-01-01

An experiment was conducted at the CERN intersecting storage rings using colliding proton beams to investigate high-multiplicity gamma-ray events. The objective of the study was to reveal certain features of multiple pion production as well as other possible mechanisms of gamma-ray production. The detector system consisted of ten planes of spark chambers, three scintillation counter hodoscopes and two arrays of lead-glass Cerenkov counters, the first array containing 16 counters and the second, 60 counters. The event trigger was obtained from the Cerenkov counters, and the energies in all the Cerenkov counters after trigger, as well as the information on all the charged particles given by the scintillation counters and spark chambers were recorded on magnetic tape. The relationship between the number of gamma-rays per event and the number of Cerenkov counters triggered by a neutral secondary was established by means of a Monte Carlo calculation.

Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide

NASA Astrophysics Data System (ADS)

Kallaher, Raymond L.

This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to those characteristics found in previous reported work on doped EuS crystals. In particular, the magnetic switching behavior of individual micro-fabricated EuS structures was investigated to determine what types of spintronic devices EuS is best suited for. These studies found that the crystalline anisotropy of EuS dominates the switching behavior in EuS thin film structures with minimum feature sizes greater than ˜5 mum. This, in conjunction with the relatively high resistance of junctions between EuS and semiconductors, restricts the use of two tandem EuS electrodes in all semiconductor spintronic devices that require independently switching ferromagnetic electrodes. Spin transport studies in InAs 2DES are particularly interesting because of the heterostructure's high electron mobility and tunable spin-orbit interactions. Detailed measurements of the electrical transport characteristics across the heterojunction formed between EuS and InAs were taken in order to investigate the spin transport characteristics across the junction. These measurements show that the electrical transport across the heterojunction, below the ferromagnetic transition temperature, is directly related to the magnetization of the EuS layer and thus the transport is dominated by the spin-dependent Schottky barrier formed in EuS. Using a simple theory developed for these junctions, the magnitude of the change in barrier height---half the Zeeman splitting of the conduction band in EuS---as found to be ˜0.22 eV. The electrical transport measurements of the heterojunction between EuS and InAs at temperatures well above the ferromagnetic transition temperature of EuS shows that there are at least two separate scattering mechanisms in these junctions. As expected, critical scattering is the dominate scattering mechanism in the strongly paramagnetic regime; however, unexpectedly, the data show that critical scattering is not the dominate mechanism at temperatures greater than ˜100 K. The high temperature electrical transport measurements of the EuS/InAs heterojunction, in conjunction with low temperature zero-bias conductance measurements on junctions between EuS and gold (Au), suggest that there exists an interfacial layer in series with the magnetic Schottky barrier in these EuS junctions. This interfacial layer is modeled and explained as resulting from a rather high concentration of defects at the interface between EuS and the counter electrode.

Low-Cost Flexible Nano-Sulfide/Carbon Composite Counter Electrode for Quantum-Dot-Sensitized Solar Cell

PubMed Central

2010-01-01

Cu2S nanocrystal particles were in situ deposited on graphite paper to prepare nano-sulfide/carbon composite counter electrode for CdS/CdSe quantum-dot-sensitized solar cell (QDSC). By optimization of deposition time, photovoltaic conversion efficiency up to 3.08% was obtained. In the meantime, this composite counter electrode was superior to the commonly used Pt, Au and carbon counter electrodes. Electrochemical impedance spectra further confirmed that low charge transfer resistance at counter electrode/electrolyte interface was responsible for this, implied the potential application of this composite counter electrode in high-efficiency QDSC. PMID:20672135

Method of physical vapor deposition of metal oxides on semiconductors

DOEpatents

Norton, David P.

2001-01-01

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

Method for removing semiconductor layers from salt substrates

DOEpatents

Shuskus, Alexander J.; Cowher, Melvyn E.

1985-08-27

A method is described for removing a CVD semiconductor layer from an alkali halide salt substrate following the deposition of the semiconductor layer. The semiconductor-substrate combination is supported on a material such as tungsten which is readily wet by the molten alkali halide. The temperature of the semiconductor-substrate combination is raised to a temperature greater than the melting temperature of the substrate but less than the temperature of the semiconductor and the substrate is melted and removed from the semiconductor by capillary action of the wettable support.

Photovoltaic cell with nano-patterned substrate

DOEpatents

Cruz-Campa, Jose Luis; Zhou, Xiaowang; Zubia, David

2016-10-18

A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer.

Effect of counter-pulsation control of a pulsatile left ventricular assist device on working load variations of the native heart.

PubMed

Choi, Seong Wook; Nam, Kyoung Won; Lim, Ki Moo; Shim, Eun Bo; Won, Yong Soon; Woo, Heung Myong; Kwak, Ho Hyun; Noh, Mi Ryoung; Kim, In Young; Park, Sung Min

2014-04-03

When using a pulsatile left ventricular assist device (LVAD), it is important to reduce the cardiac load variations of the native heart because severe cardiac load variations can induce ventricular arrhythmia. In this study, we investigated the effect of counter-pulsation control of the LVAD on the reduction of cardiac load variation. A ventricular electrocardiogram-based counter-pulsation control algorithm for a LVAD was implemented, and the effects of counter-pulsation control of the LVAD on the reduction of the working load variations of the left ventricle were determined in three animal experiments. Deviations of the working load of the left ventricle were reduced by 51.3%, 67.9%, and 71.5% in each case, and the beat-to-beat variation rates in the working load were reduced by 84.8%, 82.7%, and 88.2% in each ease after counter-pulsation control. There were 3 to 12 premature ventricle contractions (PVCs) before counter-pulsation control, but no PVCs were observed during counter-pulsation control. Counter-pulsation control of the pulsatile LVAD can reduce severe cardiac load variations, but the average working load is not markedly affected by application of counter-pulsation control because it is also influenced by temporary cardiac outflow variations. We believe that counter-pulsation control of the LVAD can improve the long-term safety of heart failure patients equipped with LVADs.

Randomness fault detection system

NASA Technical Reports Server (NTRS)

Russell, B. Don (Inventor); Aucoin, B. Michael (Inventor); Benner, Carl L. (Inventor)

1996-01-01

A method and apparatus are provided for detecting a fault on a power line carrying a line parameter such as a load current. The apparatus monitors and analyzes the load current to obtain an energy value. The energy value is compared to a threshold value stored in a buffer. If the energy value is greater than the threshold value a counter is incremented. If the energy value is greater than a high value threshold or less than a low value threshold then a second counter is incremented. If the difference between two subsequent energy values is greater than a constant then a third counter is incremented. A fault signal is issued if the counter is greater than a counter limit value and either the second counter is greater than a second limit value or the third counter is greater than a third limit value.

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

DOEpatents

Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

2015-05-12

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

Reducing leakage current in semiconductor devices

DOEpatents

Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

2018-03-06

A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Method of doping a semiconductor

DOEpatents

Yang, Chiang Y.; Rapp, Robert A.

1983-01-01

A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

DOEpatents

Norman, Andrew

2016-08-23

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

Stable surface passivation process for compound semiconductors

DOEpatents

Ashby, Carol I. H.

2001-01-01

A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

FLEXIBLE GEIGER COUNTER

DOEpatents

Richter, H.G.; Gillespie, A.S. Jr.

1963-11-12

A flexible Geiger counter constructed from materials composed of vinyl chloride polymerized with plasticizers or co-polymers is presented. The counter can be made either by attaching short segments of corrugated plastic sleeving together, or by starting with a length of vacuum cleaner hose composed of the above materials. The anode is maintained substantially axial Within the sleeving or hose during tube flexing by means of polystyrene spacer disks or an easily assembled polyethylene flexible cage assembly. The cathode is a wire spiraled on the outside of the counter. The sleeving or hose is fitted with glass end-pieces or any other good insulator to maintain the anode wire taut and to admit a counting gas mixture into the counter. Having the cathode wire on the outside of the counter substantially eliminates the objectional sheath effect of prior counters and permits counting rates up to 300,000 counts per minute. (AEC)

Signaling communication events in a computer network

DOEpatents

Bender, Carl A.; DiNicola, Paul D.; Gildea, Kevin J.; Govindaraju, Rama K.; Kim, Chulho; Mirza, Jamshed H.; Shah, Gautam H.; Nieplocha, Jaroslaw

2000-01-01

A method, apparatus and program product for detecting a communication event in a distributed parallel data processing system in which a message is sent from an origin to a target. A low-level application programming interface (LAPI) is provided which has an operation for associating a counter with a communication event to be detected. The LAPI increments the counter upon the occurrence of the communication event. The number in the counter is monitored, and when the number increases, the event is detected. A completion counter in the origin is associated with the completion of a message being sent from the origin to the target. When the message is completed, LAPI increments the completion counter such that monitoring the completion counter detects the completion of the message. The completion counter may be used to insure that a first message has been sent from the origin to the target and completed before a second message is sent.

21 CFR 862.2320 - Beta or gamma counter for clinical use.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Beta or gamma counter for clinical use. 862.2320... (CONTINUED) MEDICAL DEVICES CLINICAL CHEMISTRY AND CLINICAL TOXICOLOGY DEVICES Clinical Laboratory Instruments § 862.2320 Beta or gamma counter for clinical use. (a) Identification. A beta or gamma counter for...

78 FR 19718 - Modifications To Labeling of Nicotine Replacement Therapy Products for Over-the-Counter Human Use

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-02

...] Modifications To Labeling of Nicotine Replacement Therapy Products for Over-the-Counter Human Use AGENCY: Food...-counter nicotine replacement therapy products, related to concomitant use with other nicotine-containing... over-the- counter nicotine replacement therapy products for their approved intended use as aids to...

21 CFR 864.5200 - Automated cell counter.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Automated cell counter. 864.5200 Section 864.5200....5200 Automated cell counter. (a) Identification. An automated cell counter is a fully-automated or semi-automated device used to count red blood cells, white blood cells, or blood platelets using a sample of the...

21 CFR 892.1130 - Nuclear whole body counter.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Nuclear whole body counter. 892.1130 Section 892...) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1130 Nuclear whole body counter. (a) Identification. A nuclear whole body counter is a device intended to measure the amount of radionuclides in the...

21 CFR 892.1130 - Nuclear whole body counter.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Nuclear whole body counter. 892.1130 Section 892...) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1130 Nuclear whole body counter. (a) Identification. A nuclear whole body counter is a device intended to measure the amount of radionuclides in the...

Instability of counter-rotating stellar disks

NASA Astrophysics Data System (ADS)

Hohlfeld, R. G.; Lovelace, R. V. E.

2015-09-01

We use an N-body simulation, constructed using GADGET-2, to investigate an accretion flow onto an astrophysical disk that is in the opposite sense to the disk's rotation. In order to separate dynamics intrinsic to the counter-rotating flow from the impact of the flow onto the disk, we consider an initial condition in which the counter-rotating flow is in an annular region immediately exterior the main portion of the astrophysical disk. Such counter-rotating flows are seen in systems such as NGC 4826 (known as the "Evil Eye Galaxy"). Interaction between the rotating and counter-rotating components is due to two-stream instability in the boundary region. A multi-armed spiral density wave is excited in the astrophysical disk and a density distribution with high azimuthal mode number is excited in the counter-rotating flow. Density fluctuations in the counter-rotating flow aggregate into larger clumps and some of the material in the counter-rotating flow is scattered to large radii. Accretion flow processes such as this are increasingly seen to be of importance in the evolution of multi-component galactic disks.

The response of a scintillation counter below an emulsion chamber to heavy nucleus interactions in the chamber

NASA Technical Reports Server (NTRS)

Burnett, T. H.; Dake, S.; Derrickson, J. H.; Fountain, W. F.; Fuki, M.; Gregory, J. C.; Hayashi, T.; Hayashi, T.; Holynski, R.; Iwai, J.;

Facile synthesis of nitrogen-doped reduced graphene oxide as an efficient counter electrode for dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Wei, Liguo; Wang, Ping; Yang, Yulin; Luo, Ruidong; Li, Jinqi; Gu, Xiaohu; Zhan, Zhaoshun; Dong, Yongli; Song, Weina; Fan, Ruiqing

2018-04-01

A nitrogen-doped reduced graphene oxide (N-RGO) nanosheet was synthesized by a simple hydrothermal method and characterized by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electrode microscopy. After being deposited as counter electrode film for dye-sensitized solar cells (DSSCs), it is found that the synthesized N-RGO nanosheet has smaller charge-transfer resistance and better electrocatalytic activity towards reduction of triiodide than the reduced graphene oxide (RGO) nanosheet. Consequently, the DSSCs based on the N-RGO counter electrode achieve an energy conversion efficiency of 4.26%, which is higher than that of the RGO counter electrode (2.85%) prepared under the same conditions, and comparable to the value (5.21%) obtained with the Pt counter electrode as a reference. This N-RGO counter electrode offers the advantages of not only saving the cost of Pt itself but also simplifying the process of counter electrode preparation. Therefore, an inexpensive N-RGO nanosheet is a promising counter electrode material to replace noble metal Pt. [Figure not available: see fulltext.

Less haste, less waste: on recycling and its limits in strand displacement systems

PubMed Central

Condon, Anne; Hu, Alan J.; Maňuch, Ján; Thachuk, Chris

2012-01-01

We study the potential for molecule recycling in chemical reaction systems and their DNA strand displacement realizations. Recycling happens when a product of one reaction is a reactant in a later reaction. Recycling has the benefits of reducing consumption, or waste, of molecules and of avoiding fuel depletion. We present a binary counter that recycles molecules efficiently while incurring just a moderate slowdown compared with alternative counters that do not recycle strands. This counter is an n-bit binary reflecting Gray code counter that advances through 2n states. In the strand displacement realization of this counter, the waste—total number of nucleotides of the DNA strands consumed—is polynomial in n, the number of bits of the counter, while the waste of alternative counters grows exponentially in n. We also show that our n-bit counter fails to work correctly when many (Θ(n)) copies of the species that represent the bits of the counter are present initially. The proof applies more generally to show that in chemical reaction systems where all but one reactant of each reaction are catalysts, computations longer than a polynomial function of the size of the system are not possible when there are polynomially many copies of the system present. PMID:22649584

High-efficiency and low-background multi-segmented proportional gas counter for β-decay spectroscopy

NASA Astrophysics Data System (ADS)

Mukai, M.; Hirayama, Y.; Watanabe, Y. X.; Schury, P.; Jung, H. S.; Ahmed, M.; Haba, H.; Ishiyama, H.; Jeong, S. C.; Kakiguchi, Y.; Kimura, S.; Moon, J. Y.; Oyaizu, M.; Ozawa, A.; Park, J. H.; Ueno, H.; Wada, M.; Miyatake, H.

2018-03-01

A multi-segmented proportional gas counter (MSPGC) with high detection efficiency and low-background event rate has been developed for β-decay spectroscopy. The MSPGC consists of two cylindrically aligned layers of 16 counters (32 counters in total). Each counter has a long active length and small trapezoidal cross-section, and the total solid angle of the 32 counters is 80% of 4 π. β-rays are distinguished from the background events including cosmic-rays by analyzing the hit patterns of independent counters. The deduced intrinsic detection efficiency of each counter was almost 100%. The measured background event rate was 0.11 counts per second using the combination of veto counters for cosmic-rays and lead block shields for background γ-rays. The MSPGC was applied to measure the β-decay half-lives of 198Ir and 199mPt. The evaluated half-lives of T1/2 = 9 . 8(7) s and 12.4(7) s for 198Ir and 199mPt, respectively, were in agreement with previously reported values. The estimated absolute detection efficiency of the MSPGC from GEANT4 simulations was consistent with the evaluated efficiency from the analysis of the β- γ spectroscopy of 199Pt, saturating at approximately 60% for Qβ > 4 MeV.

Development of a high-sensitivity BGO well counter for small animal PET studies.

PubMed

Yamamoto, Seiichi; Watabe, Hiroshi; Kanai, Yasukazu; Watabe, Tadashi; Imaizumi, Masao; Shimosegawa, Eku; Hatazawa, Jun

2012-01-01

In quantitative measurements of small animal PET studies, blood sampling is limited due to the small amounts of blood such animals can provide. In addition, injection doses are quite limited. In this situation, a high-sensitivity well counter would be useful for reducing the amount of the blood sample needed from small animals. Bismuth germinate (BGO) has a high stopping power for high-energy gamma rays compared to NaI(Tl), which is commonly used for conventional well counters. We have developed a BGO well counter and have tested it for blood-sampling measurements in small animals. The BGO well counter uses a square BGO block (59 × 59 × 50 mm) with a square open space (27 × 27 × 34 mm) in the center of the block. The BGO block was optically coupled to a 59-mm square-shaped photomultiplier tube (PMT). Signals from the PMT were digitally processed for the integration and energy window setting. The results showed that the energy spectrum of the BGO well counter measured with a Na-22 point source provided counts that were about 6 times higher for a 1022-keV (511 keV × 2) gamma peak than the spectrum of a 2-in. NaI(Tl) well counter. The relative sensitivity of the developed BGO well counter was 3.4 times higher than that of a NaI(Tl) well counter. The time activity curve of arterial blood was obtained successfully with the BGO well counter for a F-18-FDG study on rat. The BGO well counter will contribute to reducing the amount of sampled blood and to improving the throughput of quantitative measurements in small animal PET studies.

Over-the-counter Acne Treatments

PubMed Central

Graber, Emmy M.

2012-01-01

Acne is a common dermatological disorder that most frequently affects adolescents; however, individuals may be affected at all ages. Many people who suffer from acne seek treatment from both prescription and over-the-counter acne medications. Due to convenience, lower cost, and difficulty getting an appointment with a dermatologist, the use of over-the-counter acne treatments is on the rise. As the plethora of over-the-counter acne treatment options can be overwhelming, it is important that dermatologists are well-versed on this subject to provide appropriate information about treatment regimens and potential drug interactions and that their patients see them as well-informed. This article reviews the efficacy of various over-the-counter acne treatments based on the current literature. A thorough literature review revealed there are many types of over-the-counter acne treatments and each are designed to target at least one of the pathogenic pathways that are reported to be involved in the development of acne lesions. Many of the key over-the-counter ingredients are incorporated in different formulations to broaden the spectrum and consumer appeal of available products. Unfortunately, many over-the-counter products are not well-supported by clinical studies, with a conspicuous absence of double-blind or investigator-blind, randomized, vehicle-controlled studies. Most studies that do exist on over-the-counter acne products are often funded by the manufacturer. Use of over-the-counter acne treatments is a mainstay in our society and it is important that dermatologists are knowledgeable about the different options, including potential benefits and limitations. Overall, over-the-counter acne therapies can be classified into the following five major groups: cleansers, leave-on products, mechanical treatments, essential oils, and vitamins. PMID:22808307

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process

DOEpatents

Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

2001-01-01

A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process

DOEpatents

Alivisatos, A. Paul; Peng, Xiaogang; Manna, Liberato

2001-01-01

A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.

Over-the-counter medications containing diphenhydramine and doxylamine used by older adults to improve sleep.

PubMed

Abraham, Olufunmilola; Schleiden, Loren; Albert, Steven M

2017-08-01

Background The unintentional misuse of over-the-counter sleep aids among older adults is an important public health problem and a focus of Healthy People 2020. Accordingly, the 2015 Beers Criteria for Potentially Inappropriate Medication Use in Older Adults recommends that individuals 65 years or older avoid use of diphenhydramine and doxylamine; however, many over-the-counter sleep products contain these active ingredients. Objective To identify the proportion of older adults using an over-the-counter medication containing diphenhydramine or doxylamine, and compare their characteristics with older adults using an over-the-counter medication that does not contain these ingredients. Setting Study participants were recruited from the Community Registry of the Pittsburgh Claude D. Pepper Older Americans Independence Center. Method The study sample was taken from a larger survey of 1025 participants on sleep health and over-the-counter sleep medication use conducted from February to April 2015. A subset of 169 participants aged 65 and older reporting taking at least one over-the-counter product to improve sleep within the past 30 days (16.5%) were selected for our analysis on associations between participant characteristics and potentially inappropriate use of over-the-counter sleep medications. Main outcome measure The proportion and characteristics of older adults taking at least one over-the-counter medication containing diphenhydramine or doxylamine. Results Of the 223 over-the-counter sleep medications listed by participants, 115 (52%) contained diphenhydramine or doxylamine. Using the Beers Criteria, we found that more than half of participants (59%) had used a potentially inappropriate over-the-counter medication containing diphenhydramine or doxylamine to improve sleep within the past 30 days. Participants taking at least one diphenhydramine or doxylamine containing medication were less likely to be aware of any safety risks in taking over-the-counter sleep medications than participants not taking these products (38 vs 49%, p = 0.016). Conclusion A majority of older adults in a limited sample from the United States taking an over-the-counter medication to improve sleep are taking a product containing diphenhydramine or doxylamine, both of which are classified as potentially inappropriate for older adults. Awareness of the safety risks of over-the-counter medications and addressing conditions that impact sleep quality could be facilitated through consultation with pharmacists and other healthcare providers.

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors

PubMed Central

Jin Lee, Su; Kim, Yong-Jae; Young Yeo, So; Lee, Eunji; Sun Lim, Ho; Kim, Min; Song, Yong-Won; Cho, Jinhan; Ah Lim, Jung

2015-01-01

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step. PMID:26359068

Centro-Apical Self-Organization of Organic Semiconductors in a Line-Printed Organic Semiconductor: Polymer Blend for One-Step Printing Fabrication of Organic Field-Effect Transistors.

PubMed

Lee, Su Jin; Kim, Yong-Jae; Yeo, So Young; Lee, Eunji; Lim, Ho Sun; Kim, Min; Song, Yong-Won; Cho, Jinhan; Lim, Jung Ah

2015-09-11

Here we report the first demonstration for centro-apical self-organization of organic semiconductors in a line-printed organic semiconductor: polymer blend. Key feature of this work is that organic semiconductor molecules were vertically segregated on top of the polymer phase and simultaneously crystallized at the center of the printed line pattern after solvent evaporation without an additive process. The thickness and width of the centro-apically segregated organic semiconductor crystalline stripe in the printed blend pattern were controlled by varying the relative content of the organic semiconductors, printing speed, and solution concentrations. The centro-apical self-organization of organic semiconductor molecules in a printed polymer blend may be attributed to the combination of an energetically favorable vertical phase-separation and hydrodynamic fluids inside the droplet during solvent evaporation. Finally, a centro-apically phase-separated bilayer structure of organic semiconductor: polymer blend was successfully demonstrated as a facile method to form the semiconductor and dielectric layer for OFETs in one- step.

Reliability of Metrics Associated with a Counter-Movement Jump Performed on a Force Plate

ERIC Educational Resources Information Center

Lombard, Wayne; Reid, Sorrel; Pearson, Keagan; Lambert, Michael

2017-01-01

The counter-movement jump is a consequence of maximal force, rate of force developed, and neuromuscular coordination. Thus, the counter-movement jump has been used to monitor various training adaptations. However, the smallest detectable difference of counter-movement jump metrics has yet to be established. The objective of the present study was…

Counter-transference and counter-experience in the treatment of violence prone youth.

PubMed

King, C H

1976-01-01

The constant confrontation inherent in therapeutic intervention with violence prone children, some of whome have committed homicide, is explored. Problems unique to work with these youths are discussed in terms of counter-transference issues for clinicians and counter-experience of teachers and child care workers. Suggestions for training and supervision are offered.

Operations-Focused Optimized Theater Weather Sensing Strategies Using Preemptive Binary Integer Programming

DTIC Science & Technology

2009-03-01

8217 Clear old problem data Do While Trim(Sheets("Campaign").Range("AF" & CStr (LOOP_COUNTER))) <> "" LOOP_COUNTER = LOOP_COUNTER + 1 Loop Do While...Trim(Sheets("Campaign").Range("A" & CStr (LOOP_COUNTER))) <> "" ’ Loop through all problem instances Sheets("Campaign").Range("R1:AF1").Rows...total number of locations M = Sheets("Campaign").Range("F" & CStr (LOOP_COUNTER)) ’ Record total number of sensor types N

Dynamic pulse difference circuit

DOEpatents

Erickson, Gerald L.

1978-01-01

A digital electronic circuit of especial use for subtracting background activity pulses in gamma spectrometry comprises an up-down counter connected to count up with signal-channel pulses and to count down with background-channel pulses. A detector responsive to the count position of the up-down counter provides a signal when the up-down counter has completed one scaling sequence cycle of counts in the up direction. In an alternate embodiment, a detector responsive to the count position of the up-down counter provides a signal upon overflow of the counter.

Real-time garbage collection for list processing

NASA Technical Reports Server (NTRS)

Shuler, R. L., Jr. (Inventor)

1986-01-01

In a list processing system, small reference counters are maintained in conjunction with memory cells for the purpose of identifying memory cells that become available for re-use. The counters are updated as references to the cells are created and destroyed, and when a counter of a cell is decremented to logical zero the cell is immediately returned to a list of free cells. In those cases where a counter must be incremented beyond the maximum value that can be represented in a small counter, the cell is restructured so that the additional reference count can be represented. The restructuring involves allocating an additional cell, distributing counter, tag, and pointer information among the two cells, and linking both cells appropriately into the existing list structure.

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

1990-01-01

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

NASA Astrophysics Data System (ADS)

Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

2016-12-01

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V-1 s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

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Science.gov Websites

SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing (ERC ) ** Bringing Sustainability to Semiconductor Manufacturing ** A multi-university research center leading the way to environmentally friendly semiconductor manufacturing, sponsored by the Semiconductor Research

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Method of making silicon on insalator material using oxygen implantation

DOEpatents

Hite, Larry R.; Houston, Ted; Matloubian, Mishel

1989-01-01

The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

21 CFR 310.540 - Drug products containing active ingredients offered over-the-counter (OTC) for use as stomach...

Code of Federal Regulations, 2013 CFR

2013-04-01

... offered over-the-counter (OTC) for use as stomach acidifiers. 310.540 Section 310.540 Food and Drugs FOOD... ingredients offered over-the-counter (OTC) for use as stomach acidifiers. (a) Betaine hydrochloride, glutamic...-counter (OTC) drug products for use as stomach acidifiers. Because of the lack of adequate data to...

21 CFR 310.540 - Drug products containing active ingredients offered over-the-counter (OTC) for use as stomach...

Code of Federal Regulations, 2014 CFR

2014-04-01

... offered over-the-counter (OTC) for use as stomach acidifiers. 310.540 Section 310.540 Food and Drugs FOOD... ingredients offered over-the-counter (OTC) for use as stomach acidifiers. (a) Betaine hydrochloride, glutamic...-counter (OTC) drug products for use as stomach acidifiers. Because of the lack of adequate data to...

21 CFR 310.540 - Drug products containing active ingredients offered over-the-counter (OTC) for use as stomach...

Code of Federal Regulations, 2012 CFR

2012-04-01

... offered over-the-counter (OTC) for use as stomach acidifiers. 310.540 Section 310.540 Food and Drugs FOOD... ingredients offered over-the-counter (OTC) for use as stomach acidifiers. (a) Betaine hydrochloride, glutamic...-counter (OTC) drug products for use as stomach acidifiers. Because of the lack of adequate data to...

Training Post-9/11 Police Officers with a Counter-Terrorism Reality-Based Training Model: A Case Study

ERIC Educational Resources Information Center

Biddle, Christopher J.

2013-01-01

The purpose of this qualitative holistic multiple-case study was to identify the optimal theoretical approach for a Counter-Terrorism Reality-Based Training (CTRBT) model to train post-9/11 police officers to perform effectively in their counter-terrorism assignments. Post-9/11 police officers assigned to counter-terrorism duties are not trained…

21 CFR 310.540 - Drug products containing active ingredients offered over-the-counter (OTC) for use as stomach...

Code of Federal Regulations, 2011 CFR

2011-04-01

... offered over-the-counter (OTC) for use as stomach acidifiers. 310.540 Section 310.540 Food and Drugs FOOD... ingredients offered over-the-counter (OTC) for use as stomach acidifiers. (a) Betaine hydrochloride, glutamic...-counter (OTC) drug products for use as stomach acidifiers. Because of the lack of adequate data to...

INVESTIGATION OF THE SUN'S X-RAYS. III. ELECTRONIC APPARATUS (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasil'ev, B.N.; Shurigin, A.I.; Tindo, I.P.

1963-01-01

The electronic portion of an apparatus constructed for the investigation of soft x rays being emitted by the sun is described. The apparatus is used in geophysical rockets and in cosmic space ships and earth satellites. In the geophysical rockets two separate detection channels are employed, one for the working counters and the other for the control counters. The working counter is always directed towards the sun while the control counter is turned 15 deg away from the sun. In the second Sputnik six identical counters were used and arranged so that their line of sight was oriented along threemore » mutually perpendicular axes. In the third Sputnik the working and contour counters were distributed in a system which was self-orienting with respect to the sun. In addition, two stationary counters were enrployed; their direction with respect to the sun changed during the course of the flight. The electronic apparatus consists of the following basic components: a circuit that forms the amplitude and shape of the counter pulses, the triggering device, the separating cascade circuit, and the coding set-up. Each of these circuits is described in detail; block diagrams are shown. (TTT)« less

Controlling the stoichiometry and doping of semiconductor materials

DOEpatents

Albin, David; Burst, James; Metzger, Wyatt; Duenow, Joel; Farrell, Stuart; Colegrove, Eric

2016-08-16

Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

ERC Membership/Boards

Science.gov Websites

SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing (ERC ) ** Bringing Sustainability to Semiconductor Manufacturing ** A multi-university research center leading the way to environmentally friendly semiconductor manufacturing, sponsored by the Semiconductor Research

Basic Research Needs for Countering Terrorism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stevens, W.; Michalske, T.; Trewhella, J.

2002-03-01

To identify connections between technology needs for countering terrorism and underlying science issues and to recommend investment strategies to increase the impact of basic research on efforts to counter terrorism.

Is counter-terrorism policy evidence-based? What works, what harms, and what is unknown.

PubMed

Lum, Cynthia; Kennedy, Leslie W; Sherley, Alison

2008-02-01

Is counter-terrorism policy evidence-based? What works, what harms, and what is unknown. One of the central concerns surrounding counter-terrorism interventions today, given the attention and money spent on them, is whether such interventions are effective. To explore this issue, we conducted a general review of terrorism literature as well as a Campbell systematic review on counter-terrorism strategies. In this article, we summarize some of our findings from these works. Overall, we found an almost complete absence of evaluation research on counter-terrorism strategies and conclude that counter-terrorism policy is not evidence-based. The findings of this review emphasise the need for government leaders, policy makers, researchers, and funding agencies to include and insist on evaluations of the effectiveness of these programs in their agendas.

Bi-Se doped with Cu, p-type semiconductor

DOEpatents

Bhattacharya, Raghu Nath; Phok, Sovannary; Parilla, Philip Anthony

2013-08-20

A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.

Hardware support for software controlled fast reconfiguration of performance counters

DOEpatents

Salapura, Valentina; Wisniewski, Robert W.

2013-06-18

Hardware support for software controlled reconfiguration of performance counters may include a plurality of performance counters collecting one or more counts of one or more selected activities. A storage element stores data value representing a time interval, and a timer element reads the data value and detects expiration of the time interval based on the data value and generates a signal. A plurality of configuration registers stores a set of performance counter configurations. A state machine receives the signal and selects a configuration register from the plurality of configuration registers for reconfiguring the one or more performance counters.

Hardware support for software controlled fast reconfiguration of performance counters

DOEpatents

Salapura, Valentina; Wisniewski, Robert W

2013-09-24

Hardware support for software controlled reconfiguration of performance counters may include a plurality of performance counters collecting one or more counts of one or more selected activities. A storage element stores data value representing a time interval, and a timer element reads the data value and detects expiration of the time interval based on the data value and generates a signal. A plurality of configuration registers stores a set of performance counter configurations. A state machine receives the signal and selects a configuration register from the plurality of configuration registers for reconfiguring the one or more performance counters.

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOEpatents

Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

2006-09-05

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOEpatents

Weiss, Shimon [Pinole, CA; Bruchez, Jr., Marcel; Alivisatos, Paul [Oakland, CA

2004-03-02

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOEpatents

Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

2005-08-09

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOEpatents

Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

2002-01-01

A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

Back-side readout semiconductor photomultiplier

DOEpatents

Choong, Woon-Seng; Holland, Stephen E

2014-05-20

This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

Bulk semiconducting scintillator device for radiation detection

DOEpatents

Stowe, Ashley C.; Burger, Arnold; Groza, Michael

2016-08-30

A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

Sintered silver joints via controlled topography of electronic packaging subcomponents

DOEpatents

Wereszczak, Andrew A.

2014-09-02

Disclosed are sintered silver bonded electronic package subcomponents and methods for making the same. Embodiments of the sintered silver bonded EPSs include topography modification of one or more metal surfaces of semiconductor devices bonded together by the sintered silver joint. The sintered silver bonded EPSs include a first semiconductor device having a first metal surface, the first metal surface having a modified topography that has been chemically etched, grit blasted, uniaxial ground and/or grid sliced connected to a second semiconductor device which may also include a first metal surface with a modified topography, a silver plating layer on the first metal surface of the first semiconductor device and a silver plating layer on the first metal surface of the second semiconductor device and a sintered silver joint between the silver plating layers of the first and second semiconductor devices which bonds the first semiconductor device to the second semiconductor device.

Semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOEpatents

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul

2014-01-28

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with one or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.

Semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weiss, Shimon; Bruchez, Marcel; Alivisatos, Paul A.

2016-12-27

A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1) one or more semiconductor nanocrystals capable of, in response to exposure to a first energy, providing a second energy, and (2) one or more linking agents, having a first portion linked to the one or more semiconductor nanocrystals and a second portion capable of linking to one or more affinity molecules. One or more semiconductor nanocrystal compounds are linked to one or more affinity molecules to form a semiconductor nanocrystal probe capable of bonding with onemore » or more detectable substances in a material being analyzed, and capable of, in response to exposure to a first energy, providing a second energy. Also described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and treating materials with the probe.« less

21 CFR 201.315 - Over-the-counter drugs for minor sore throats; suggested warning.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 4 2010-04-01 2010-04-01 false Over-the-counter drugs for minor sore throats... Drug Products § 201.315 Over-the-counter drugs for minor sore throats; suggested warning. The Food and... counter for the relief of minor irritations of the mouth or throat. It will not object to the labeling of...

21 CFR 201.315 - Over-the-counter drugs for minor sore throats; suggested warning.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 4 2011-04-01 2011-04-01 false Over-the-counter drugs for minor sore throats... Drug Products § 201.315 Over-the-counter drugs for minor sore throats; suggested warning. The Food and... counter for the relief of minor irritations of the mouth or throat. It will not object to the labeling of...

Semiconductor electrode with improved photostability characteristics

DOEpatents

Frank, A.J.

1985-02-19

An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Semiconductor electrode with improved photostability characteristics

DOEpatents

Frank, Arthur J.

1987-01-01

An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

Can counter-advertising reduce pre-adolescent children's susceptibility to front-of-package promotions on unhealthy foods? Experimental research.

PubMed

Dixon, Helen; Scully, Maree; Kelly, Bridget; Chapman, Kathy; Wakefield, Melanie

2014-09-01

This study aimed to test whether counter-advertisements (i.e. messages contesting industry marketing) make pre-adolescent children less susceptible to the influence of food promotions. Since children have lower media literacy levels due to their immature cognitive abilities, specific research questions explored were: (1) whether the effectiveness of counter-ads is contingent on children having understood them; and (2) whether counter-ads may be detrimental when they are misinterpreted. A between-subjects experimental design using a web-based methodology was employed. 1351 grade 5-6 students (mean age 11 years) from schools located in metropolitan Melbourne, Australia participated. Participants were randomly shown an animated web banner advertisement (counter-ad challenging front-of-package promotion or control ad) and a pair of food packages from the same product category comprising an unhealthy product featuring a front-of-package promotion (nutrient content claim or sports celebrity endorsement) and a healthier control pack without a front-of-package promotion. Responses to the assigned advertisement, choice of product (healthy versus unhealthy) and ratings of the unhealthy product and front-of-package promotion on various nutritional and image-related attributes were recorded for each child. Sixty-six percent of children who viewed a counter-ad understood its main message. These children rated the front-of-package promotion as less believable and rated the unhealthy product bearing the front-of-package promotion as less healthy compared to the control group. However, children who misunderstood the counter-ad rated the unhealthy product bearing a front-of-package promotion as more healthy and rated the front-of-package promotion more favourably than those who correctly understood the counter-ad. Counter-advertising may have unintended consequences when misunderstood. If public health organizations or government pursue counter-advertising as a strategy to reduce the negative influence of unhealthy food marketing among children, caution is needed in designing counter-ads to guard against possible contradictory effects. Copyright © 2014 Elsevier Ltd. All rights reserved.

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass.

PubMed

Liu, Wenjian; Zhang, Hongxia; Shi, Jin-An; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V; Chen, Mingwei; Yao, Kefu; Chen, Na

2016-12-08

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co 28.6 Fe 12.4 Ta 4.3 B 8.7 O 46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm 2  V -1  s -1 . Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

PubMed Central

Liu, Wenjian; Zhang, Hongxia; Shi, Jin-an; Wang, Zhongchang; Song, Cheng; Wang, Xiangrong; Lu, Siyuan; Zhou, Xiangjun; Gu, Lin; Louzguine-Luzgin, Dmitri V.; Chen, Mingwei; Yao, Kefu; Chen, Na

2016-01-01

Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V−1 s−1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities. PMID:27929059

Where the chips fall: environmental health in the semiconductor industry.

PubMed

Chepesiuk, R

1999-09-01

Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment.

Where the chips fall: environmental health in the semiconductor industry.

PubMed Central

Chepesiuk, R

1999-01-01

Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment. PMID:10464084

Samus Counter Lifting Fixture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stredde, H.; /Fermilab

1998-05-27

A lifting fixture has been designed to handle the Samus counters. These counters are being removed from the D-zero area and will be transported off site for further use at another facility. This fixture is designed specifically for this particular application and will be transferred along with the counters. The future use of these counters may entail installation at a facility without access to a crane and therefore a lift fixture suitable for both crane and/or fork lift usage has been created The counters weigh approximately 3000 lbs. and have threaded rods extended through the counter at the top comersmore » for lifting. When these counters were first handled/installed these rods were used in conjunction with appropriate slings and handled by crane. The rods are secured with nuts tightened against the face of the counter. The rod thread is M16 x 2({approx}.625-inch dia.) and extends 2-inch (on average) from the face of the counter. It is this cantilevered rod that the lift fixture engages with 'C' style plates at the four top comers. The strongback portion of the lift fixture is a steel rectangular tube 8-inch (vertical) x 4-inch x .25-inch wall, 130-inch long. 1.5-inch square bars are welded perpendicular to the long axis of the rectangular tube at the appropriate lift points and the 'C' plates are fastened to these bars with 3/4-10 high strength bolts -grade 8. Two short channel sections are positioned-welded-to the bottom of the rectangular tube on 40 feet centers, which are used as locators for fork lift tines. On the top are lifting eyes for sling/crane usage and are rated at 3500 lbs. safe working load each - vertical lift only.« less

Semiconductor nanocrystal-based phagokinetic tracking

DOEpatents

Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

2014-11-18

Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

Semiconductor devices having a recessed electrode structure

DOEpatents

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2015-05-26

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Diode having trenches in a semiconductor region

DOEpatents

Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

2016-03-22

An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

Solid state radiative heat pump

DOEpatents

Berdahl, P.H.

1984-09-28

A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

Wafer-fused semiconductor radiation detector

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

78 FR 21344 - Grant of Authority for Subzone Status, Hemlock Semiconductor Corporation, (Polysilicon), Hemlock...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-10

... Status, Hemlock Semiconductor Corporation, (Polysilicon), Hemlock, Michigan Pursuant to its authority... polysilicon manufacturing facility of Hemlock Semiconductor Corporation, located in Hemlock, Michigan (FTZ... manufacturing of polysilicon at the facility of Hemlock Semiconductor Corporation, located in Hemlock, Michigan...

Counter-Stereotypes and Feminism Promote Leadership Aspirations in Highly Identified Women.

PubMed

Leicht, Carola; Gocłowska, Małgorzata A; Van Breen, Jolien A; de Lemus, Soledad; Randsley de Moura, Georgina

2017-01-01

Although women who highly identify with other women are more susceptible to stereotype threat effects, women's identification might associate with greater leadership aspirations contingent on (1) counter-stereotype salience and (2) feminist identification. When gender counter-stereotypes are salient, women's identification should associate with greater leadership aspiration regardless of feminism, while when gender stereotypes are salient, women's identification would predict greater leadership aspirations contingent on a high level of feminist identification. In our study US-based women ( N = 208) attended to gender stereotypic (vs. counter-stereotypic) content. We measured identification with women and identification with feminism, and, following the manipulation, leadership aspirations in an imagined work scenario. The interaction between identification with women, identification with feminism, and attention to stereotypes (vs. counter-stereotypes) significantly predicted leadership aspirations. In the counter-stereotypic condition women's identification associated with greater leadership aspirations regardless of feminist identification. In the stereotypic condition women's identification predicted leadership aspirations only at high levels of feminist identification. We conclude that salient counter-stereotypes and a strong identification with feminism may help high women identifiers increase their leadership aspirations.

Counter-Stereotypes and Feminism Promote Leadership Aspirations in Highly Identified Women

PubMed Central

Leicht, Carola; Gocłowska, Małgorzata A.; Van Breen, Jolien A.; de Lemus, Soledad; Randsley de Moura, Georgina

2017-01-01

Although women who highly identify with other women are more susceptible to stereotype threat effects, women's identification might associate with greater leadership aspirations contingent on (1) counter-stereotype salience and (2) feminist identification. When gender counter-stereotypes are salient, women's identification should associate with greater leadership aspiration regardless of feminism, while when gender stereotypes are salient, women's identification would predict greater leadership aspirations contingent on a high level of feminist identification. In our study US-based women (N = 208) attended to gender stereotypic (vs. counter-stereotypic) content. We measured identification with women and identification with feminism, and, following the manipulation, leadership aspirations in an imagined work scenario. The interaction between identification with women, identification with feminism, and attention to stereotypes (vs. counter-stereotypes) significantly predicted leadership aspirations. In the counter-stereotypic condition women's identification associated with greater leadership aspirations regardless of feminist identification. In the stereotypic condition women's identification predicted leadership aspirations only at high levels of feminist identification. We conclude that salient counter-stereotypes and a strong identification with feminism may help high women identifiers increase their leadership aspirations. PMID:28626437

Ti Porous Film-Supported NiCo₂S₄ Nanotubes Counter Electrode for Quantum-Dot-Sensitized Solar Cells.

PubMed

Deng, Jianping; Wang, Minqiang; Song, Xiaohui; Yang, Zhi; Yuan, Zhaolin

2018-04-17

In this paper, a novel Ti porous film-supported NiCo₂S₄ nanotube was fabricated by the acid etching and two-step hydrothermal method and then used as a counter electrode in a CdS/CdSe quantum-dot-sensitized solar cell. Measurements of the cyclic voltammetry, Tafel polarization curves, and electrochemical impedance spectroscopy of the symmetric cells revealed that compared with the conventional FTO (fluorine doped tin oxide)/Pt counter electrode, Ti porous film-supported NiCo₂S₄ nanotubes counter electrode exhibited greater electrocatalytic activity toward polysulfide electrolyte and lower charge-transfer resistance at the interface between electrolyte and counter electrode, which remarkably improved the fill factor, short-circuit current density, and power conversion efficiency of the quantum-dot-sensitized solar cell. Under illumination of one sun (100 mW/cm²), the quantum-dot-sensitized solar cell based on Ti porous film-supported NiCo₂S₄ nanotubes counter electrode achieved a power conversion efficiency of 3.14%, which is superior to the cell based on FTO/Pt counter electrode (1.3%).

The counter and consultation room work explored in the Netherlands.

PubMed

Mobach, Mark P

2008-08-01

To determine the frequency and nature of conversations at the counter and of private consultations at three Dutch community pharmacies. In a purposive and convenience sample of three Dutch community pharmacies two work categories were investigated: counter work and consultation room work with self-reporting tally. The study took 6 weeks: 2 weeks at each pharmacy. The number of care related conversations and consultations emerging in the counter work and consultation room work. About 43% of all counter conversations consisted of the provision of pharmaceutical information and 72% of the consultations in the separate consultation room dealt with care related activities. However, only 18 consultations were held in this latter room: 0.4% of all reported conversations. The proportion of care related work at the counter and in the consultation room did have significant substance. There are however serious possibilities to change pharmaceutical care for the better. It is suggested that standard procedures at the counter may help increasing care related work. The presence of a separate consultation room may increase the number of consultations held in private, when combined with raising patient awareness of its existence.

Shielding concepts for low-background proportional counter arrays in surface laboratories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aalseth, Craig E.; Humble, Paul H.; Mace, Emily K.

2016-02-01

Development of ultra low background gas proportional counters has made the contribution from naturally occurring radioactive isotopes – primarily and activity in the uranium and thorium decay chains – inconsequential to instrumental sensitivity levels when measurements are performed in above ground surface laboratories. Simple lead shielding is enough to mitigate against gamma rays as gas proportional counters are already relatively insensitive to naturally occurring gamma radiation. The dominant background in these surface laboratory measurements using ultra low background gas proportional counters is due to cosmic ray generated muons, neutrons, and protons. Studies of measurements with ultra low background gas proportionalmore » counters in surface and underground laboratories as well as radiation transport Monte Carlo simulations suggest a preferred conceptual design to achieve the highest possible sensitivity from an array of low background gas proportional counters when operated in a surface laboratory. The basis for a low background gas proportional counter array and the preferred shielding configuration is reported, especially in relation to measurements of radioactive gases having low energy decays such as 37Ar.« less

Counter electrodes in dye-sensitized solar cells.

PubMed

Wu, Jihuai; Lan, Zhang; Lin, Jianming; Huang, Miaoliang; Huang, Yunfang; Fan, Leqing; Luo, Genggeng; Lin, Yu; Xie, Yimin; Wei, Yuelin

2017-10-02

Dye-sensitized solar cells (DSSCs) are regarded as prospective solar cells for the next generation of photovoltaic technologies and have become research hotspots in the PV field. The counter electrode, as a crucial component of DSSCs, collects electrons from the external circuit and catalyzes the redox reduction in the electrolyte, which has a significant influence on the photovoltaic performance, long-term stability and cost of the devices. Solar cells, dye-sensitized solar cells, as well as the structure, principle, preparation and characterization of counter electrodes are mentioned in the introduction section. The next six sections discuss the counter electrodes based on transparency and flexibility, metals and alloys, carbon materials, conductive polymers, transition metal compounds, and hybrids, respectively. The special features and performance, advantages and disadvantages, preparation, characterization, mechanisms, important events and development histories of various counter electrodes are presented. In the eighth section, the development of counter electrodes is summarized with an outlook. This article panoramically reviews the counter electrodes in DSSCs, which is of great significance for enhancing the development levels of DSSCs and other photoelectrochemical devices.

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

NASA Astrophysics Data System (ADS)

Biyikli, Necmi; Haider, Ali

2017-09-01

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

Semiconductor assisted metal deposition for nanolithography applications

DOEpatents

Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

2001-01-01

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Semiconductor assisted metal deposition for nanolithography applications

DOEpatents

Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

2002-01-01

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Electrochemical characterization of bilayer lipid membrane-semiconductor junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Xiao Kang; Baral, S.; Fendler, J.H.

Three different systems of glyceryl monooleate (GMO), bilayer lipid membrane (BLM) supported semiconductor particles have been prepared and characterized. A single composition of particulate semiconductor deposited only on one side of the BLM constituted system A, two different compositions of particulate semiconductors sequentially deposited on the same side of the BLM represented system B, and two different compositions of particulate semiconductors deposited on the opposite sides of the BLM made up system C.

46 CFR 183.360 - Semiconductor rectifier systems.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 7 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

Semiconductors: A 21st Century Social Studies Topic.

ERIC Educational Resources Information Center

Sunal, Cynthia

2000-01-01

Addresses the reasons for exploring semiconductor technology and organic semiconductors in schools for either middle school or secondary students in an interdisciplinary social studies and science environment. Provides background information on transistors and semiconductors. Offers three social studies lessons and related science lessons if an…

46 CFR 183.360 - Semiconductor rectifier systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

Semiconductor photoelectrochemistry

NASA Technical Reports Server (NTRS)

Buoncristiani, A. M.; Byvik, C. E.

1983-01-01

Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

Prescription Drugs, Over-the-Counter Drugs, Supplements and Herbal Products

MedlinePlus

... at risk? Zika virus and pregnancy Folic acid Medicine safety and pregnancy Birth defects prevention Learn how ... the-counter drugs, supplements and herbal products Prescription drugs, over-the-counter drugs, supplements and herbal products ...

Effect of Transitioning from Standard Reference Material 2806a to Standard Reference Material 2806b for Light Obscuration Particle Countering

DTIC Science & Technology

2016-04-01

Reference Material 2806b for Light Obscuration Particle Countering April 2016 UNCLASSIFIED UNCLASSIFIED Joel Schmitigal 27809 Standard Form 298 (Rev...Standard Reference Material 2806b for Light Obscuration Particle Countering 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6...Reference Material 2806a to Standard Reference Material 2806b for Light Obscuration Particle Countering Joel Schmitigal Force Projection

Using DMA for copying performance counter data to memory

DOEpatents

Gara, Alan; Salapura, Valentina; Wisniewski, Robert W.

2012-09-25

A device for copying performance counter data includes hardware path that connects a direct memory access (DMA) unit to a plurality of hardware performance counters and a memory device. Software prepares an injection packet for the DMA unit to perform copying, while the software can perform other tasks. In one aspect, the software that prepares the injection packet runs on a processing core other than the core that gathers the hardware performance counter data.

Counter traction makes endoscopic submucosal dissection easier.

PubMed

Oyama, Tsuneo

2012-11-01

Poor counter traction and poor field of vision make endoscopic submucosal dissection (ESD) difficult. Good counter traction allows dissections to be performed more quickly and safely. Position change, which utilizes gravity, is the simplest method to create a clear field of vision. It is useful especially for esophageal and colon ESD. The second easiest method is clip with line method. Counter traction made by clip with line accomplishes the creation of a clear field of vision and suitable counter traction thereby making ESD more efficient and safe. The author published this method in 2002. The name ESD was not established in those days; the name cutting endoscopic mucosal resection (EMR) or EMR with hook knife was used. The other traction methods such as external grasping forceps, internal traction, double channel scope, and double scopes method are introduced in this paper. A good strategy for creating counter traction makes ESD easier.

Counter-Rotatable Fan Gas Turbine Engine with Axial Flow Positive Displacement Worm Gas Generator

NASA Technical Reports Server (NTRS)

Giffin, Rollin George (Inventor); Murrow, Kurt David (Inventor); Fakunle, Oladapo (Inventor)

2014-01-01

A counter-rotatable fan turbine engine includes a counter-rotatable fan section, a worm gas generator, and a low pressure turbine to power the counter-rotatable fan section. The low pressure turbine maybe counter-rotatable or have a single direction of rotation in which case it powers the counter-rotatable fan section through a gearbox. The gas generator has inner and outer bodies having offset inner and outer axes extending through first, second, and third sections of a core assembly. At least one of the bodies is rotatable about its axis. The inner and outer bodies have intermeshed inner and outer helical blades wound about the inner and outer axes and extending radially outwardly and inwardly respectively. The helical blades have first, second, and third twist slopes in the first, second, and third sections respectively. A combustor section extends through at least a portion of the second section.

Alcohol counter-advertising and the media. A review of recent research.

PubMed

Agostinelli, Gina; Grube, Joel W

2002-01-01

Counter-advertising commonly is used to balance the effects that alcohol advertising may have on alcohol consumption and alcohol-related problems. Such measures can take the form of print or broadcast advertisements (e.g., public service announcements [PSAs]) as well as product warning labels. The effectiveness of both types of counter-advertising is reviewed using the Elaboration Likelihood Model as a theoretical framework. For print and broadcast counter-advertisements, such factors as their emotional appeal and the credibility of the source, as well as audience factors, can influence their effectiveness. Further, brewer-sponsored counter-advertisements are evaluated and received differently than are the more conventional PSA counter-advertisements. For warning labels, both the content and design of the label influence their effectiveness, as do audience factors. The effectiveness of those labels is evaluated in terms of the extent to which they impact cognitive and affective processes as well as drinking behavior.

Method of Promoting Single Crystal Growth During Melt Growth of Semiconductors

NASA Technical Reports Server (NTRS)

Su, Ching-Hua (Inventor)

2013-01-01

The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

Will Future Measurement Needs of the Semiconductor Industry Be Met?

PubMed

Bennett, Herbert S

2007-01-01

We discuss the ability of the nation's measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry's powerful impact in the world's macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry.

46 CFR 129.360 - Semiconductor-rectifier systems.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

78 FR 40427 - Foreign-Trade Zone (FTZ) 183-Austin, Texas; Notification of Proposed Production Activity; Samsung...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-07-05

..., Texas; Notification of Proposed Production Activity; Samsung Austin Semiconductor, LLC (Semiconductors); Austin, Texas Samsung Austin Semiconductor, LLC (Samsung), operator of Subzone 183B, submitted a... June 26, 2013. Samsung currently has authority to produce semiconductor memory devices for export...

40 CFR 63.7182 - What parts of my facility does this subpart cover?

Code of Federal Regulations, 2011 CFR

2011-07-01

... CATEGORIES (CONTINUED) National Emission Standards for Hazardous Air Pollutants for Semiconductor... manufactures semiconductors. (b) An affected source subject to this subpart is the collection of all semiconductor manufacturing process units used to manufacture p-type and n-type semiconductors and active solid...

46 CFR 129.360 - Semiconductor-rectifier systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

46 CFR 120.360 - Semiconductor rectifier systems.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

Thermoelectric generator and method for the fabrication thereof

DOEpatents

Benson, David K.; Tracy, C. Edwin

1987-01-01

A thermoelectric generator using semiconductor elements for responding to a temperature gradient to produce electrical energy with all of the semiconductor elements being of the same type is disclosed. A continuous process for forming substrates on which the semiconductor elements and superstrates are deposited and a process for forming the semiconductor elements on the substrates are also disclosed. The substrates with the semiconductor elements thereon are combined with superstrates to form modules for use thermoelectric generators.

Thermoelectric generator and method for the fabrication thereof

DOEpatents

Benson, D.K.; Tracy, C.E.

1984-08-01

A thermoelectric generator using semiconductor elements for responding to a temperature gradient to produce electrical energy with all of the semiconductor elements being of the same type is disclosed. A continuous process for forming substrates on which the semiconductor elements and superstrates are deposited and a process for forming the semiconductor elements on the substrates are also disclosed. The substrates with the semiconductor elements thereon are combined with superstrates to form modules for use as thermoelectric generators.

Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication

DOEpatents

Sopori, Bhushan

2014-05-27

Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Over-the-Counter Medicines

MedlinePlus

Over-the-counter (OTC) medicines are drugs you can buy without a prescription. Some OTC medicines relieve aches, pains and itches. Some prevent or cure ... the Food and Drug Administration decides whether a medicine is safe enough to sell over-the-counter. ...

Real-time {sup 90}Sr Counter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaneko, Naomi; Kawai, Hideyuki; Kodama, Satoshi

2015-07-01

Radioisotopes have been emitted around Japan due to a nuclear accident at the Fukushima Daiichi nuclear power station in March 2011. A problem is the contaminated water including the atomic nucleus which relatively has a long half- life time and soluble such as {sup 90}Sr, {sup 137}Cs. Internal exposures by {sup 90}Sr are more dangerous than {sup 137}Cs's because Sr has effective half-life time of 18 years and property of accumulation in a born. We have developed real-time {sup 90}Sr counter which is sensitive beta-ray of maximum kinematic energy of 2.28 MeV from {sup 90}Sr and insensitive of beta-ray ofmore » maximum kinematic energy of 1.17 MeV and gamma-ray from {sup 90}Sr by Cherenkov detection. This counter composes of Cerenkov counter, trigger scintillation counter and veto counter. Silica aerogel for Cherenkov counter can obtain refractive index between 1.017 and 1.049 easily. And wavelength shifting fiber (WLSF) is used as a light guide for extending effective area and producing lower cost. A mechanism of the identification of {sup 90}Sr is explained in following. In case of {sup 90}Sr, when the trigger counter reacts on the beta-ray from {sup 90}Sr, aerogel emits the Cherenkov light and WLSF reacts and read the Cherenkov light. On the other hand, in case of {sup 137}Cs, the trigger counter reacts on the beta-ray, aerogel stops the beta- ray and Cherenkov light is not emitted. Therefore, aerogel has a function as a radiator and shielding material. the gamma-ray is not reacted on the lower density detector. Cosmic rays would be also reacted by the veto counter. A prototype counter whose the effective area is 30 cm x 10 cm was obtained (2.0±1.2){sup 3} of mis-identification as {sup 137}Cs/{sup 90}Sr. Detection limit in the surface contamination inspection depends on measurement time and effective area mainly. The sensitivity of wide range, 10{sup -2} - 10{sup 4} Bq/cm{sup 2}, is obtained by adjustment of detection level in circuit of this counter. A lower radioactive sample (< 10{sup -2} Bq/cm{sup 2}) allows be detected significantly by heating treatment to evaporate water shielding the beta-rays. (authors)« less

High use of over-the-counter analgesic; possible warnings of reduced quality of life in adolescents - a qualitative study.

PubMed

Skarstein, Siv; Lagerløv, Per; Kvarme, Lisbeth Gravdal; Helseth, Sølvi

2016-01-01

Use of over-the-counter analgesics among adolescents has increased markedly. High consumption of over-the-counter analgesics among adolescents is associated with frequent pain, lower self-esteem, reduced sleep, lower educational ambition, binge drinking, higher caffeine consumption, and part-time employment. Knowledge about life experiences of adolescents who frequently use over-the-counter analgesics may be useful to prevent health problems. The purpose of the study was to increase knowledge about adolescents who suffer from frequent pain and have a high consumption of over-the-counter analgesics. A qualitative study, employing one-on-one, in-depth interviews using a thematic interview guide. Data were collected in Norway in 2013-2014. Three boys and sixteen girls; aged 14-16 years, who continuously consumed over-the-counter analgesics were recruited from ten high schools in urban and suburban districts. Candidate participants were excluded if they were medically diagnosed with an acute or chronic illness, requiring extended use of over-the-counter analgesics within the last year. The interviews were taped, transcribed and analysed as text according to Kvale's three contexts of interpretation: self-understanding, common sense and theory. All participants disclosed unresolved physical and psychosocial distress characterized as pain. Frequent pain from various body parts made everyday life challenging. Methods of pain self-appraisal and over-the-counter analgesics use often mimicked maternal patterns. Participants reported being raised under unpredictable circumstances that contributed to long lasting family conflicts and peer-group problems. Participants wanted to feel appreciated and to be socially and academically successful. However, pain reduced their ability to manage everyday life, hampered experienced possibilities for success, and made social settings difficult. Childhood experiences influence how adolescents experience pain and use over-the-counter analgesics. Coping with difficult situations or attempting to mask symptoms with over-the-counter analgesics can perpetuate and amplify underlying problems. High consumption of over-the-counter analgesics and frequent pain may be warning signs of adolescents with possible health threatening conditions and reduced quality of life. These adolescent might be in need of support from school nurses and General Practitioners. This study identifies new perspectives that may lead to novel approaches to identify, guide, and support adolescents with frequent pain and high consumption of over-the-counter analgesics.

HIGH VOLTAGE GENERATOR

DOEpatents

Zito, G.V.

1959-04-21

This patent relates to high voltage supply circuits adapted for providing operating voltages for GeigerMueller counter tubes, and is especially directed to an arrangement for maintaining uniform voltage under changing conditions of operation. In the usual power supply arrangement for counter tubes the counter voltage is taken from across the power supply output capacitor. If the count rate exceeds the current delivering capaciiy of the capacitor, the capacitor voltage will drop, decreasing the counter voltage. The present invention provides a multivibrator which has its output voltage controlled by a signal proportional to the counting rate. As the counting rate increases beyond the current delivering capacity of the capacitor, the rectified voltage output from the multivibrator is increased to maintain uniform counter voltage.

Hispanic youth involvement in over-the-counter drug use: parent, peer, and school factors.

PubMed

Vidourek, Rebecca A; King, Keith A; Fehr, Sara K

2014-01-01

Research on substance use among Hispanic youth is lacking. The purpose of this study was to examine over-the-counter drug use among Hispanic youth. Of Hispanic youth, 23.9% used an over-the-counter drug for the purpose of getting high. Involvement in prosocial behaviors was correlated with decreased over-the-counter use for females and high school students. Involvement in risky behaviors increased the risk of use for males, females, junior high school students, and high school students. Significant differences were found based on parent, peer, teacher, and school factors. Prevention and intervention programs should address over-the-counter drug use among Hispanic youth.

78 FR 68814 - Subzone 183B; Authorization of Production Activity; Samsung Austin Semiconductor, LLC...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-11-15

... DEPARTMENT OF COMMERCE Foreign-Trade Zones Board [B-70-2013] Subzone 183B; Authorization of Production Activity; Samsung Austin Semiconductor, LLC (Semiconductors); Austin, Texas On June 26, 2013, Samsung Austin Semiconductor, LLC submitted a notification of proposed export production activity to the...

40 CFR 63.7195 - What definitions apply to this subpart?

Code of Federal Regulations, 2012 CFR

2012-07-01

... units used to manufacture p-type and n-type semiconductors or active solid state devices from a wafer.... Examples of semiconductor or related solid state devices include semiconductor diodes, semiconductor stacks... permanently attached to motor vehicles such as trucks, railcars, barges, or ships; (2) Flow-through tanks...

40 CFR 63.7195 - What definitions apply to this subpart?

Code of Federal Regulations, 2013 CFR

2013-07-01

... units used to manufacture p-type and n-type semiconductors or active solid state devices from a wafer.... Examples of semiconductor or related solid state devices include semiconductor diodes, semiconductor stacks... permanently attached to motor vehicles such as trucks, railcars, barges, or ships; (2) Flow-through tanks...

40 CFR 63.7195 - What definitions apply to this subpart?

Code of Federal Regulations, 2014 CFR

2014-07-01

... units used to manufacture p-type and n-type semiconductors or active solid state devices from a wafer.... Examples of semiconductor or related solid state devices include semiconductor diodes, semiconductor stacks... permanently attached to motor vehicles such as trucks, railcars, barges, or ships; (2) Flow-through tanks...

Achieving copper sulfide leaf like nanostructure electrode for high performance supercapacitor and quantum-dot sensitized solar cells

NASA Astrophysics Data System (ADS)

Durga, Ikkurthi Kanaka; Rao, S. Srinivasa; Reddy, Araveeti Eswar; Gopi, Chandu V. V. M.; Kim, Hee-Je

2018-03-01

Copper sulfide is an important multifunctional semiconductor that has attracted considerable attention owing to its outstanding properties and multiple applications, such as energy storage and electrochemical energy conversion. This paper describes a cost-effective and simple low-temperature solution approach to the preparation of copper sulfide for supercapacitors (SCs) and quantum-dot sensitized solar cells (QDSSCs). X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy confirmed that the nickel foam with a coriander leaf like nanostructure had been coated successfully with copper sulfide. As an electrode material for SCs, the CC-3 h showed excellent specific capacitance (5029.28 at 4 A g-1), energy density (169.73 W h kg-1), and superior cycling durability with 107% retention after 2000 cycles. Interestingly, the QDSSCs equipped with CC-2 h and CC-3 h counter electrodes (CEs) exhibited a maximum power conversion efficiency of 2.52% and 3.48%, respectively. The improved performance of the CC-3 h electrode was attributed mainly to the large surface area (which could contribute sufficient electroactive species), good conductivity, and high electrocatalytic activity. Overall, this work delivers novel insights into the use of copper sulfide and offers an important guidelines for the fabrication of next level energy storage and conversion devices.

Measuring the radioactivity of drinking water with the liquid counters M2H in combination with contamination meters IM 4457

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanhemmen, J.J.; Vanhoek, L.P.; Aten, J.B.T.

1976-01-01

The relationship between the meter indications and the radioactivity of fission products in drinking water for the combination contamination meter IM 4457 and liquid counter M2H was investigated. The experimental setup is presented, the efficiency of the liquid counter for a mixture of fission products is briefly dealt with, and the use of the combination counter/meter in the field is discussed.

The remote controlling technique based on the serial port for SR-620 universal counter

NASA Astrophysics Data System (ADS)

Su, Jian-Feng; Chen, Shu-Fang; Li, Xiao-Hui; Wu, Hai-Tao; Bian, Yu-Jing

2004-12-01

The function of SR-620 universal counter and the remote work mode are introduced, and the remote controlling technique for the counter is analysed. A method to realize the remote controlling via the serial port for the counter is demonstrated, in which an ActiveX control is used. Besides, some points for attention in debugging are discussed based on the experience, and a case of program running for measuring time-delay is presented.

Normative and counter-normative stress messages and symptom reporting: implications for health promotion and a methodological artefact for stress research.

PubMed

Ferguson, Eamonn; Lawrence, Claire

2013-05-01

There is increasing use of counter-normative health messages (i.e., evidence-based health information about cause-effect relationships that run counter to shared normative beliefs, e.g., stress can lead to personal growth). The current studies examine the effect of normative and counter-normative messages about stress on levels of symptom reporting. Predictions are derived from reactance, social comparison, and self-enhancement theories. Two studies focus on the development of the messages, and two experimental studies examine the effect of manipulating normative and counter-normative messages on symptom reports. The final study controls for mere-measurement effects and explores the role of stress process variables (appraisals and coping). Exposure to a normative message (stress causes ill health) results in reduced symptom reporting compared to a counter-normative message (stress provides challenge, growth, and development) and control groups. The results suggest that people may use symptom reporting strategically to indicate coping. Based on the argument that beliefs about stress and health are stored as mental models, the theoretical associations derived from stress theory are only observed when a normative message is presented. Counter-normative stress messages may carry no tangible benefits compared to normative messages. Some stress research may suffer from inherent methodological bias when normative information is provided in information and consent sheets. Statement of contribution What is already known on this subject? At present, nothing is known about counter-normative health messages, despite the fact that they are becoming widely used as a public intervention. What does this study add? A clear operational definition of counter-normative messages. A test of three competing theories for counter-normative messages that focus of the stress-symptom link. Demonstrating for the first time, that in the domain of stress and health, counter-normative messages are at best ineffective. Demonstrating for the first time that only when the stress-coping-symptom links are made explicit do the theoretical associations observed in the literature emerge. This may be a potential methodological artefact in stress research that needs to be controlled. © 2013 The British Psychological Society.

Electrodes for Semiconductor Gas Sensors

PubMed Central

Lee, Sung Pil

2017-01-01

The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor)

2011-01-01

Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices.

Method for manufacturing electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1988-11-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1989-08-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Lattice matched semiconductor growth on crystalline metallic substrates

DOEpatents

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2013-11-05

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

Will Future Measurement Needs of the Semiconductor Industry Be Met?

PubMed Central

Bennett, Herbert S.

2007-01-01

We discuss the ability of the nation’s measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry’s powerful impact in the world’s macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry. PMID:27110452

Kinematic and stellar population properties of the counter-rotating components in the S0 galaxy NGC 1366

NASA Astrophysics Data System (ADS)

Morelli, L.; Pizzella, A.; Coccato, L.; Corsini, E. M.; Dalla Bontà, E.; Buson, L. M.; Ivanov, V. D.; Pagotto, I.; Pompei, E.; Rocco, M.

2017-04-01

Context. Many disk galaxies host two extended stellar components that rotate in opposite directions. The analysis of the stellar populations of the counter-rotating components provides constraints on the environmental and internal processes that drive their formation. Aims: The S0 NGC 1366 in the Fornax cluster is known to host a stellar component that is kinematically decoupled from the main body of the galaxy. Here we successfully separated the two counter-rotating stellar components to independently measure the kinematics and properties of their stellar populations. Methods: We performed a spectroscopic decomposition of the spectrum obtained along the galaxy major axis and separated the relative contribution of the two counter-rotating stellar components and of the ionized-gas component. We measured the line-strength indices of the two counter-rotating stellar components and modeled each of them with single stellar population models that account for the α/Fe overabundance. Results: We found that the counter-rotating stellar component is younger, has nearly the same metallicity, and is less α/Fe enhanced than the corotating component. Unlike most of the counter-rotating galaxies, the ionized gas detected in NGC 1366 is neither associated with the counter-rotating stellar component nor with the main galaxy body. On the contrary, it has a disordered distribution and a disturbed kinematics with multiple velocity components observed along the minor axis of the galaxy. Conclusions: The different properties of the counter-rotating stellar components and the kinematic peculiarities of the ionized gas suggest that NGC 1366 is at an intermediate stage of the acquisition process, building the counter-rotating components with some gas clouds still falling onto the galaxy. Based on observations made with ESO Telescopes at the La Silla-Paranal Observatory under programmes 075.B-0794 and 077.B-0767.

In situ single cell detection via microfluidic magnetic bead assay

PubMed Central

KC, Pawan; Zhang, Ge; Zhe, Jiang

2017-01-01

We present a single cell detection device based on magnetic bead assay and micro Coulter counters. This device consists of two successive micro Coulter counters, coupled with a high gradient magnetic field generated by an external magnet. The device can identify single cells in terms of the transit time difference of the cell through the two micro Coulter counters. Target cells are conjugated with magnetic beads via specific antibody and antigen binding. A target cell traveling through the two Coulter counters interacts with the magnetic field, and have a longer transit time at the 1st counter than that at the 2nd counter. In comparison, a non-target cell has no interaction with the magnetic field, and hence has nearly the same transit times through the two counters. Each cell passing through the two counters generates two consecutive voltage pulses one after the other; the pulse widths and magnitudes indicating the cell’s transit times through the counters and the cell’s size respectively. Thus, by measuring the pulse widths (transit times) of each cell through the two counters, each single target cell can be differentiated from non-target cells even if they have similar sizes. We experimentally proved that the target human umbilical vein endothelial cells (HUVECs) and non-target rat adipose-derived stem cells (rASCs) have significant different transit time distribution, from which we can determine the recognition regions for both cell groups quantitatively. We further demonstrated that within a mixed cell population of rASCs and HUVECs, HUVECs can be detected in situ and the measured HUVECs ratios agree well with the pre-set ratios. With the simple device structure and easy sample preparation, this method is expected to enable single cell detection in a continuous flow and can be applied to facilitate general cell detection applications such as stem cell identification and enumeration. PMID:28222140

In situ single cell detection via microfluidic magnetic bead assay.

PubMed

Liu, Fan; Kc, Pawan; Zhang, Ge; Zhe, Jiang

2017-01-01

We present a single cell detection device based on magnetic bead assay and micro Coulter counters. This device consists of two successive micro Coulter counters, coupled with a high gradient magnetic field generated by an external magnet. The device can identify single cells in terms of the transit time difference of the cell through the two micro Coulter counters. Target cells are conjugated with magnetic beads via specific antibody and antigen binding. A target cell traveling through the two Coulter counters interacts with the magnetic field, and have a longer transit time at the 1st counter than that at the 2nd counter. In comparison, a non-target cell has no interaction with the magnetic field, and hence has nearly the same transit times through the two counters. Each cell passing through the two counters generates two consecutive voltage pulses one after the other; the pulse widths and magnitudes indicating the cell's transit times through the counters and the cell's size respectively. Thus, by measuring the pulse widths (transit times) of each cell through the two counters, each single target cell can be differentiated from non-target cells even if they have similar sizes. We experimentally proved that the target human umbilical vein endothelial cells (HUVECs) and non-target rat adipose-derived stem cells (rASCs) have significant different transit time distribution, from which we can determine the recognition regions for both cell groups quantitatively. We further demonstrated that within a mixed cell population of rASCs and HUVECs, HUVECs can be detected in situ and the measured HUVECs ratios agree well with the pre-set ratios. With the simple device structure and easy sample preparation, this method is expected to enable single cell detection in a continuous flow and can be applied to facilitate general cell detection applications such as stem cell identification and enumeration.

The effect of the use of a counter-torque device on the abutment-implant complex.

PubMed

Lang, L A; May, K B; Wang, R F

1999-04-01

Little is known about the condition of the abutment-screw joint before loading, after the development of the preload. This study examined the tightening force transmitted to the implant with and without the use of a counter-torque device during the tightening of the abutment screw. Forty Brânemark implants and 10 CeraOne, Estheticone, Procera, and AurAdapt abutments formed the experimental populations. Samples in each group were further divided into 2 groups, 1 group was tightened with a torque controller without the use of a counter-torque device, whereas the other used the counter-torque device. Samples were positioned in a special holder within the grips of a Tohnichi BTG-6 torque gauge for measuring transmitted forces. There were significant differences (P =. 0001) in the tightening forces transmitted to the implant with and without the use of a counter-torque device when tightening the abutment screws. An average of 91% of the recommended preload tightening torque was transmitted to the implant-bone interface in the absence of a counter-torque device. In all abutment systems, less than 10% of the recommended preload tightening torque was transmitted to the implant when the counter-torque device was used.

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

DOE PAGES

Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; ...

2015-02-09

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr xTi 1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x.more » We present structural and electrical characterization of SrZr xTi 1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

Light emitting diode with porous SiC substrate and method for fabricating

DOEpatents

Li, Ting; Ibbetson, James; Keller, Bernd

2005-12-06

A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe.

PubMed

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

NASA Astrophysics Data System (ADS)

Milotti, Valeria; Pietsch, Manuel; Strunk, Karl-Philipp; Melzer, Christian

2018-01-01

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.

Organic photosensitive cells grown on rough electrode with nano-scale morphology control

DOEpatents

Yang, Fan [Piscataway, NJ; Forrest, Stephen R [Ann Arbor, MI

2011-06-07

An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.

Photovoltaic healing of non-uniformities in semiconductor devices

DOEpatents

Karpov, Victor G.; Roussillon, Yann; Shvydka, Diana; Compaan, Alvin D.; Giolando, Dean M.

2006-08-29

A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.

Semiconductor films on flexible iridium substrates

DOEpatents

Goyal, Amit

2005-03-29

A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1998-01-01

Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

NASA Astrophysics Data System (ADS)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Semiconductor sensors

NASA Technical Reports Server (NTRS)

Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

1977-01-01

A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

Four pi-recoil proportional counter used as neutron spectrometer

NASA Technical Reports Server (NTRS)

Bennett, E. F.

1968-01-01

Study considers problems encountered in using 4 pi-recoil counters for neutron spectra measurement. Emphasis is placed on calibration, shape discrimination, variation of W, the average energy loss per ion pair, and the effects of differentiation on the intrinsic counter resolution.

Counter-diabatic driving for Dirac dynamics

NASA Astrophysics Data System (ADS)

Fan, Qi-Zhen; Cheng, Xiao-Hang; Chen, Xi

2018-03-01

In this paper, we investigate the fast quantum control of Dirac equation dynamics by counter-diabatic driving, sharing the concept of shortcut to adiabaticity. We systematically calculate the counter-diabatic terms in different Dirac systems, like graphene and trapped ions. Specially, the fast and robust population inversion processes are achieved in Dirac system, taking into account the quantum simulation with trapped ions. In addition, the population transfer between two bands can be suppressed by counter-diabatic driving in graphene system, which might have potential applications in opt-electric devices.

Configurable memory system and method for providing atomic counting operations in a memory device

DOEpatents

Bellofatto, Ralph E.; Gara, Alan G.; Giampapa, Mark E.; Ohmacht, Martin

2010-09-14

A memory system and method for providing atomic memory-based counter operations to operating systems and applications that make most efficient use of counter-backing memory and virtual and physical address space, while simplifying operating system memory management, and enabling the counter-backing memory to be used for purposes other than counter-backing storage when desired. The encoding and address decoding enabled by the invention provides all this functionality through a combination of software and hardware.

Multiple channel programmable coincidence counter

DOEpatents

Arnone, Gaetano J.

1990-01-01

A programmable digital coincidence counter having multiple channels and featuring minimal dead time. Neutron detectors supply electrical pulses to a synchronizing circuit which in turn inputs derandomized pulses to an adding circuit. A random access memory circuit connected as a programmable length shift register receives and shifts the sum of the pulses, and outputs to a serializer. A counter is input by the adding circuit and downcounted by the seralizer, one pulse at a time. The decoded contents of the counter after each decrement is output to scalers.

Analyzing the Operational Factors of Space, Force, and Time in United States Southern Command’s Counter Drug / Counter Narcoterrorism Mission

DTIC Science & Technology

2010-05-03

countries by the President. Of the 20 nations listed as meeting the criteria for 2008, 12 are found in SOUTHCOM’s AOR: The Bahamas, Bolivia , Brazil...Venezuela and Bolivia ), making them harder to catch on their way to Mexico or, increasingly, overseas.” 26 (Italics added for emphasis) Beyond pure...Southern Command. Command Strategy 2018 . Miami, FL: December, 2008. ------. “Counter Drug / Counter Narcoterrorism.” www.southcom.mil/AppsSC/pages

U.S. and Department of Defense Building Partnership Capacity and Counter/Anti-Corruption: A Symbiotic Relationship or One at Odds

DTIC Science & Technology

2016-02-16

AIR WAR COLLEGE AIR UNIVERSITY U.S. AND DEPARTMENT OF DEFENSE BUILDING PARTNERSHIP CAPACITY AND COUNTER/ANTI-CORRUPTION: A SYMBIOTIC ...Extortion,” DoD BPC and counter/anti-corruption have resulted in both a symbiotic relationship and one at odds. This uncomfortable dichotomy has led to...extraversion as “Soft Extortion” have all led DoD BPC and counter/anti-corruption efforts into a relationship that is both symbiotic and one at odds

Hardware enabled performance counters with support for operating system context switching

DOEpatents

Salapura, Valentina; Wisniewski, Robert W.

2015-06-30

A device for supporting hardware enabled performance counters with support for context switching include a plurality of performance counters operable to collect information associated with one or more computer system related activities, a first register operable to store a memory address, a second register operable to store a mode indication, and a state machine operable to read the second register and cause the plurality of performance counters to copy the information to memory area indicated by the memory address based on the mode indication.

Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

PubMed

Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

2017-01-25

We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

Solid state radiative heat pump

DOEpatents

Berdahl, Paul H.

1986-01-01

A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.

Transitioning the second-generation antihistamines to over-the-counter status: a cost-effectiveness analysis.

PubMed

Sullivan, Patrick W; Follin, Sheryl L; Nichol, Michael B

2003-12-01

A U.S. Food and Drug Administration advisory committee deemed the second-generation antihistamines (SGA) safe for over-the-counter use against the preliminary opposition of the manufacturers. As a result, loratadine is now available over-the-counter. First-generation antihistamines (FGA) are associated with an increased risk of unintentional injuries, fatalities, and reduced productivity. Access to SGA over-the-counter could result in decreased use of FGA, thereby reducing deleterious outcomes. The societal impact of transitioning this class of medications from prescription to over-the-counter status has important policy implications. To examine the cost-effectiveness of transitioning SGA to over-the-counter status from a societal perspective. A simulation model of the decision to transition SGA to over-the-counter status was compared with retaining prescription-only status for a hypothetical cohort of individuals with allergic rhinitis in the United States. Estimates of costs and effectiveness were obtained from the medical literature and national surveys. Sensitivity analysis was performed using a second-order Monte Carlo simulation. Discounted, quality-adjusted life-years saved as a result of amelioration of allergic rhinitis symptoms and avoidance of motor vehicle, occupational, public and home injuries and fatalities; discounted direct and indirect costs. Availability of SGA over-the-counter was associated with annual savings of 4 billion dollars (2.4-5.3 billion dollars) or 100 dollars (64-137 dollars) per allergic rhinitis sufferer and 135,061 time-discounted quality-adjusted life years (84,913-191,802). The sensitivity analysis provides evidence in support of these results. Making SGA available over-the-counter is both cost-saving and more effective for society, largely as a result of reduced adverse outcomes associated with FGA-induced sedation. Further study is needed to determine the differential impact on specific vulnerable populations.

Changing the status of drugs from prescription to over-the-counter availability.

PubMed

Brass, E P

2001-09-13

The availability of drugs on an over-the-counter basis, including those previously available only by prescription, provides patients with improved access to effective therapies. Removal of the requirement for prescriptions saves both the health care professional and the patient time. However, the overall effect on health care costs is complex. One such effect may be that costs shift from third-party payers to patients. In addition, short-term cost savings may be offset over the long term by problems due to inappropriate use or suboptimal therapy. Optimal therapy with an over-the-counter drug requires that the consumer diagnose the underlying condition correctly and use the drug in a manner that minimizes risk. Assessment of the ability of patients to use drugs in this manner is a critical component of the regulatory review of over-the-counter drugs. The available data arouse the concern that without the supervision of a health care professional, some patients may not be able to use over-the-counter drugs appropriately for certain diagnoses or chronic conditions or in high-risk situations. On the other hand, the widespread use of over-the-counter aspirin on a long-term basis for cardiovascular-risk reduction illustrates the potential value of increased drug availability for long-term therapy. Advances in technology may facilitate the growth of over-the-counter drug therapy. For example, the wide availability and acceptance of reliable methods for measuring serum cholesterol in nonmedical settings may eventually contribute to the safety and effectiveness of over-the-counter treatments for hyperlipidemia. Thus, the future promises increases in the number of drugs available over the counter and in the variety of indications for their use.

FOREWORD: Focus on Superconductivity in Semiconductors Focus on Superconductivity in Semiconductors

NASA Astrophysics Data System (ADS)

Takano, Yoshihiko

2008-12-01

Since the discovery of superconductivity in diamond, much attention has been given to the issue of superconductivity in semiconductors. Because diamond has a large band gap of 5.5 eV, it is called a wide-gap semiconductor. Upon heavy boron doping over 3×1020 cm-3, diamond becomes metallic and demonstrates superconductivity at temperatures below 11.4 K. This discovery implies that a semiconductor can become a superconductor upon carrier doping. Recently, superconductivity was also discovered in boron-doped silicon and SiC semiconductors. The number of superconducting semiconductors has increased. In 2008 an Fe-based superconductor was discovered in a research project on carrier doping in a LaCuSeO wide-gap semiconductor. This discovery enhanced research activities in the field of superconductivity, where many scientists place particular importance on superconductivity in semiconductors. This focus issue features a variety of topics on superconductivity in semiconductors selected from the 2nd International Workshop on Superconductivity in Diamond and Related Materials (IWSDRM2008), which was held at the National Institute for Materials Science (NIMS), Tsukuba, Japan in July 2008. The 1st workshop was held in 2005 and was published as a special issue in Science and Technology of Advanced Materials (STAM) in 2006 (Takano 2006 Sci. Technol. Adv. Mater. 7 S1). The selection of papers describe many important experimental and theoretical studies on superconductivity in semiconductors. Topics on boron-doped diamond include isotope effects (Ekimov et al) and the detailed structure of boron sites, and the relation between superconductivity and disorder induced by boron doping. Regarding other semiconductors, the superconducting properties of silicon and SiC (Kriener et al, Muranaka et al and Yanase et al) are discussed, and In2O3 (Makise et al) is presented as a new superconducting semiconductor. Iron-based superconductors are presented as a new series of high-TC superconductors (Tamegai et al), and the mechanism of superconductivity is discussed. Last but not least, a novel highest-density phase of boron is produced and characterized (Zarechnaya et al). We hope that this focus issue will help readers to understand the frontiers of superconductivity in semiconductors and assist in the application of new devices using a combination of superconductivity and semiconductivity.

SILAR deposition of nickel sulfide counter electrode for application in quantum dot sensitized solar cell

NASA Astrophysics Data System (ADS)

Singh, Navjot; Siwatch, Poonam; Arora, Anmol; Sharma, Jadab; Tripathi, S. K.

2018-05-01

Quantum Dot Sensitized Solar Cells are a likely replacement for Silicon-based solar cells. Counter electrodes are a fundamental aspect of QDSSC's performance. NiS being a less expensive material is a decent choice for the purpose. In this paper, we have discussed the synthesis of NiS by Successive Ionic Layer Adsorption Reaction. Optical, Crystallographic and Electrical studies have been presented. Electrical studies of the device with NiS counter electrode is compared with characteristics of the device with CNTs as the counter electrode. SILAR method is easy and less time to consume than chemical bath deposition or any other method. Results show the success of NiS synthesized by SILAR method as the counter electrode.

Characteristics of a high pressure gas proportional counter filled with xenon

NASA Technical Reports Server (NTRS)

Sakurai, H.; Ramsey, B. D.

1991-01-01

The characteristics of a conventional cylindrical geometry proportional counter filled with high pressure xenon gas up to 10 atm. were fundamentally investigated for use as a detector in hard X-ray astronomy. With a 2 percent methane gas mixture the energy resolutions at 10 atm. were 9.8 percent and 7.3 percent for 22 keV and 60 keV X-rays, respectively. From calculations of the Townsend ionization coefficient, it is shown that proportional counters at high pressure operate at weaker reduced electric field than low pressure counters. The characteristics of a parallel grid proportional counter at low pressure showed similar pressure dependence. It is suggested that this is the fundamental reason for the degradation of resolution observed with increasing pressure.

Gas Control System for HEAO-B

NASA Technical Reports Server (NTRS)

Taylor, B.; Brissette, R.; Humphrey, A.; Morris, J.; Luger, J.; Swift, W.

1978-01-01

The HEAO-B Gas Control System consists of a high pressure gas storage supply together with distribution and regulation assemblies and their associated electronics for management of gas required for HEAO-B X-ray counter experiments. The Gas Control System replenishes a gas mixture (82 percent argon, 12.3 percent carbon dioxide, 5.7 percent xenon) in the counter volumes which is lost by: diffusion through controlled leakage plugs, diffusion through counter windows, and consumption resulting from periodic purges. The gas density in each counter volume is maintained constant to within 0.25 percent by comparison with a sealed reference volume. The system is fully redundant, capable of operating at atmospheric pressure as well as in a vacuum, contains interlocks which shut down gas flow in the event of either leakage or excessive pressure, and is able to shut down counter high voltage if counter pressure is abnormally low. The system is electronically controlled by ground command and self-sustaining in orbit for a period of at least one year.

Collar height and heel counter-stiffness for ankle stability and athletic performance in basketball.

PubMed

Liu, Hui; Wu, Zitian; Lam, Wing-Kai

2017-01-01

This study examined the effects of collar height and heel counter-stiffness of basketball shoes on ankle stability during sidestep cutting and athletic performance. 15 university basketball players wore customized shoes with different collar heights (high and low) and heel counter-stiffness (regular, stiffer and stiffest) for this study. Ankle stability was evaluated in sidestep cutting while athletic performance evaluated in jumping and agility tasks. All variables were analysed using two-way repeated ANOVA. Results showed shorter time to peak ankle inversion for both high collar and stiff heel counter conditions (P < 0.05), while smaller initial ankle inversion angle, peak inversion velocity and total range of inversion for wearing high collar shoes (P < 0.05). No shoe differences were found for performance variables. These findings imply that the collar height might play a larger role in lateral stability than heel counter-stiffness, while both collar height and counter-stiffness have no effect on athletic performance.

Analytical Solution for the Anisotropic Rabi Model: Effects of Counter-Rotating Terms

NASA Astrophysics Data System (ADS)

Zhang, Guofeng; Zhu, Hanjie

2015-03-01

The anisotropic Rabi model, which was proposed recently, differs from the original Rabi model: the rotating and counter-rotating terms are governed by two different coupling constants. This feature allows us to vary the counter-rotating interaction independently and explore the effects of it on some quantum properties. In this paper, we eliminate the counter-rotating terms approximately and obtain the analytical energy spectrums and wavefunctions. These analytical results agree well with the numerical calculations in a wide range of the parameters including the ultrastrong coupling regime. In the weak counter-rotating coupling limit we find out that the counter-rotating terms can be considered as the shifts to the parameters of the Jaynes-Cummings model. This modification shows the validness of the rotating-wave approximation on the assumption of near-resonance and relatively weak coupling. Moreover, the analytical expressions of several physics quantities are also derived, and the results show the break-down of the U(1)-symmetry and the deviation from the Jaynes-Cummings model.

Analytical solution for the anisotropic Rabi model: effects of counter-rotating terms.

PubMed

Zhang, Guofeng; Zhu, Hanjie

2015-03-04

The anisotropic Rabi model, which was proposed recently, differs from the original Rabi model: the rotating and counter-rotating terms are governed by two different coupling constants. This feature allows us to vary the counter-rotating interaction independently and explore the effects of it on some quantum properties. In this paper, we eliminate the counter-rotating terms approximately and obtain the analytical energy spectrums and wavefunctions. These analytical results agree well with the numerical calculations in a wide range of the parameters including the ultrastrong coupling regime. In the weak counter-rotating coupling limit we find out that the counter-rotating terms can be considered as the shifts to the parameters of the Jaynes-Cummings model. This modification shows the validness of the rotating-wave approximation on the assumption of near-resonance and relatively weak coupling. Moreover, the analytical expressions of several physics quantities are also derived, and the results show the break-down of the U(1)-symmetry and the deviation from the Jaynes-Cummings model.

Analytical Solution for the Anisotropic Rabi Model: Effects of Counter-Rotating Terms

PubMed Central

Zhang, Guofeng; Zhu, Hanjie

2015-01-01

The anisotropic Rabi model, which was proposed recently, differs from the original Rabi model: the rotating and counter-rotating terms are governed by two different coupling constants. This feature allows us to vary the counter-rotating interaction independently and explore the effects of it on some quantum properties. In this paper, we eliminate the counter-rotating terms approximately and obtain the analytical energy spectrums and wavefunctions. These analytical results agree well with the numerical calculations in a wide range of the parameters including the ultrastrong coupling regime. In the weak counter-rotating coupling limit we find out that the counter-rotating terms can be considered as the shifts to the parameters of the Jaynes-Cummings model. This modification shows the validness of the rotating-wave approximation on the assumption of near-resonance and relatively weak coupling. Moreover, the analytical expressions of several physics quantities are also derived, and the results show the break-down of the U(1)-symmetry and the deviation from the Jaynes-Cummings model. PMID:25736827

Semiconductor liquid crystal composition and methods for making the same

DOEpatents

Alivisatos, A. Paul; Li, Liang-shi

2005-04-26

Semiconductor liquid crystal compositions and methods for making such compositions are disclosed. One embodiment of the invention is directed to a liquid crystal composition including a solvent and semiconductor particles in the solvent. The solvent and the semiconductor particles are in an effective amount in the liquid crystal composition to form a liquid crystal phase.

Integrated three-dimensional module heat exchanger for power electronics cooling

DOEpatents

Bennion, Kevin; Lustbader, Jason

2013-09-24

Embodiments discussed herein are directed to a power semiconductor packaging that removes heat from a semiconductor package through one or more cooling zones that are located in a laterally oriented position with respect to the semiconductor package. Additional embodiments are directed to circuit elements that are constructed from one or more modular power semiconductor packages.

Tuning and synthesis of semiconductor nanostructures by mechanical compression

DOEpatents

Fan, Hongyou; Li, Binsong

2015-11-17

A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS.

Photoelectrochemical cell including Ga(Sb.sub.x)N.sub.1-x semiconductor electrode

DOEpatents

Menon, Madhu; Sheetz, Michael; Sunkara, Mahendra Kumar; Pendyala, Chandrashekhar; Sunkara, Swathi; Jasinski, Jacek B.

2017-09-05

The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, M.W.

1990-06-19

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Surface preparation of substances for continuous convective assembly of fine particles

DOEpatents

Rossi, Robert

2003-01-01

A method for producing periodic nanometer-scale arrays of metal or semiconductor junctions on a clean semiconductor substrate surface is provided comprising the steps of: etching the substrate surface to make it hydrophilic, forming, under an inert atmosphere, a crystalline colloid layer on the substrate surface, depositing a metal or semiconductor material through the colloid layer onto the surface of the substrate, and removing the colloid from the substrate surface. The colloid layer is grown on the clean semiconductor surface by withdrawing the semiconductor substrate from a sol of colloid particles.

High resolution three-dimensional doping profiler

DOEpatents

Thundat, Thomas G.; Warmack, Robert J.

1999-01-01

A semiconductor doping profiler provides a Schottky contact at one surface and an ohmic contact at the other. While the two contacts are coupled to a power source, thereby establishing an electrical bias in the semiconductor, a localized light source illuminates the semiconductor to induce a photocurrent. The photocurrent changes in accordance with the doping characteristics of the semiconductor in the illuminated region. By changing the voltage of the power source the depth of the depletion layer can be varied to provide a three dimensional view of the local properties of the semiconductor.

Methods for enhancing P-type doping in III-V semiconductor films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

2017-08-01

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Reflection technique for thermal mapping of semiconductors

DOEpatents

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Capital investment in semiconductors: The lifeblood of the US semiconductor industry

NASA Astrophysics Data System (ADS)

Finan, William F.

1990-09-01

An analysis is given of four proposals designed to improve capital formation for U.S. industry in general, and the semiconductor industry in particular. The National Advisory Committee on Semiconductors recommendations were to make the current research and experimentation (R and E) tax credit more effective, to reduce taxes on capital gains, to increase personal savings incentives, and to improve semiconductor manufacturing equipment depreciation rules. The results of the qualitative analysis of the proposals as well as a description of the methodology employed are given.

Method of passivating semiconductor surfaces

DOEpatents

Wanlass, Mark W.

1990-01-01

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

DOEpatents

Hui, Rongqing [Lenexa, KS; Jiang, Hong-Xing [Manhattan, KS; Lin, Jing-Yu [Manhattan, KS

2008-03-18

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Semiconductor bridge (SCB) detonator

DOEpatents

Bickes, Jr., Robert W.; Grubelich, Mark C.

1999-01-01

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

Electro-chemical sensors, sensor arrays and circuits

DOEpatents

Katz, Howard E.; Kong, Hoyoul

2014-07-08

An electro-chemical sensor includes a first electrode, a second electrode spaced apart from the first electrode, and a semiconductor channel in electrical contact with the first and second electrodes. The semiconductor channel includes a trapping material. The trapping material reduces an ability of the semiconductor channel to conduct a current of charge carriers by trapping at least some of the charge carriers to localized regions within the semiconductor channel. The semiconductor channel includes at least a portion configured to be exposed to an analyte to be detected, and the trapping material, when exposed to the analyte, interacts with the analyte so as to at least partially restore the ability of the semiconductor channel to conduct the current of charge carriers.

The difference in age of the two counter-rotating stellar disks of the spiral galaxy NGC 4138

NASA Astrophysics Data System (ADS)

Pizzella, A.; Morelli, L.; Corsini, E. M.; Dalla Bontà, E.; Coccato, L.; Sanjana, G.

2014-10-01

Context. Galaxies accrete material from the environment through acquisitions and mergers. These processes contribute to the galaxy assembly and leave their fingerprints on the galactic morphology, internal kinematics of gas and stars, and stellar populations. Aims: The Sa spiral NGC 4138 is known to host two counter-rotating stellar disks, with the ionized gas co-rotating with one of them. We measured the kinematics and properties of the two counter-rotating stellar populations to constrain their formation scenario. Methods: A spectroscopic decomposition of the observed major-axis spectrum was performed to disentangle the relative contribution of the two counter-rotating stellar and one ionized-gas components. The line-strength indices of the two counter-rotating stellar components were measured and modeled with single stellar population models that account for the α/Fe overabundance. Results: The counter-rotating stellar population is younger, marginally more metal poor, and more α-enhanced than the main stellar component. The younger stellar component is also associated with a star-forming ring. Conclusions: The different properties of the counter-rotating stellar components of NGC 4138 rule out the idea that they formed because of bar dissolution. Our findings support the results of numerical simulations in which the counter-rotating component assembled from gas accreted on retrograde orbits from the environment or from the retrograde merging with a gas-rich dwarf galaxy. Based on observation carried out at the Galileo 1.22 m telescope at Padua University.

Counter-Punishment, Communication, and Cooperation among Partners

PubMed Central

Andrighetto, Giulia; Brandts, Jordi; Conte, Rosaria; Sabater-Mir, Jordi; Solaz, Hector; Székely, Áron; Villatoro, Daniel

2016-01-01

We study how communication affects cooperation in an experimental public goods environment with punishment and counter-punishment opportunities. Participants interacted over 30 rounds in fixed groups with fixed identifiers that allowed them to trace other group members' behavior over time. The two dimensions of communication we study are asking for a specific contribution level and having to express oneself when choosing to counter-punish. We conduct four experimental treatments, all involving a contribution stage, a punishment stage, and a counter-punishment stage in each round. In the first treatment communication is not possible at any of the stages. The second treatment allows participants to ask for a contribution level at the punishment stage and in the third treatment participants are required to send a message if they decide to counter-punish. The fourth combines the two communication channels of the second and third treatments. We find that the three treatments involving communication at any of the two relevant stages lead to significantly higher contributions than the baseline treatment. We find no difference between the three treatments with communication. We also relate our results to previous results from treatments without counter-punishment opportunities and do not find that the presence of counter-punishment leads to lower cooperation level. The overall pattern of results shows that given fixed identifiers the key factor is the presence of communication. Whenever communication is possible contributions and earnings are higher than when it is not, regardless of counter-punishment opportunities. PMID:27092065

GENE-Counter: A Computational Pipeline for the Analysis of RNA-Seq Data for Gene Expression Differences

PubMed Central

Di, Yanming; Schafer, Daniel W.; Wilhelm, Larry J.; Fox, Samuel E.; Sullivan, Christopher M.; Curzon, Aron D.; Carrington, James C.; Mockler, Todd C.; Chang, Jeff H.

2011-01-01

GENE-counter is a complete Perl-based computational pipeline for analyzing RNA-Sequencing (RNA-Seq) data for differential gene expression. In addition to its use in studying transcriptomes of eukaryotic model organisms, GENE-counter is applicable for prokaryotes and non-model organisms without an available genome reference sequence. For alignments, GENE-counter is configured for CASHX, Bowtie, and BWA, but an end user can use any Sequence Alignment/Map (SAM)-compliant program of preference. To analyze data for differential gene expression, GENE-counter can be run with any one of three statistics packages that are based on variations of the negative binomial distribution. The default method is a new and simple statistical test we developed based on an over-parameterized version of the negative binomial distribution. GENE-counter also includes three different methods for assessing differentially expressed features for enriched gene ontology (GO) terms. Results are transparent and data are systematically stored in a MySQL relational database to facilitate additional analyses as well as quality assessment. We used next generation sequencing to generate a small-scale RNA-Seq dataset derived from the heavily studied defense response of Arabidopsis thaliana and used GENE-counter to process the data. Collectively, the support from analysis of microarrays as well as the observed and substantial overlap in results from each of the three statistics packages demonstrates that GENE-counter is well suited for handling the unique characteristics of small sample sizes and high variability in gene counts. PMID:21998647

Direct current hybrid breakers: A design and its realization

NASA Astrophysics Data System (ADS)

Atmadji, Ali Mahfudz Surya

2000-12-01

The use of semiconductors for electric power circuit breakers instead of conventional breakers remains a utopia when designing fault current interrupters for high power networks. The major problems concerning power semiconductor circuit breakers are the excessive heat losses and their sensitivity to transients. However, conventional breakers are capable of dealing with such matters. A combination of the two methods, or so-called `hybrid breakers', would appear to be a solution; however, hybrid breakers use separate parallel branches for conducting the main current and interrupting the short-circuit current. Such breakers are intended for protecting direct current (DC) traction systems. In this thesis hybrid switching techniques for current limitation and purely solidstate current interruption are investigated for DC breakers. This work analyzes the transient behavior of hybrid breakers and compares their operations with conventional breakers and similar solid-state devices in DC systems. Therefore a hybrid breaker was constructed and tested in a specially designed high power test circuit. A vacuum breaker was chosen as the main breaker in the main conducting path; then a commutation path was connected across the vacuum breaker where it provided current limitation and interruption. The commutation path operated only during any current interruption and the process required additional circuits. These included a certain energy storage, overvoltage suppressor and commutation switch. So that when discharging this energy, a controlled counter-current injection could be produced. That counter-current opposed the main current in the breaker by superposition in order to create a forced current-zero. One-stage and two-stage commutation circuits have been treated extensively. This study project contains both theoretical and experimental investigations. A direct current shortcircuit source was constructed capable of delivering power equivalent to a fault. It supplied a direct voltage of 1kVDC which was rectified having been obtained from a 3-phase lOkV/380V supply. The source was successfully tested to deliver a fault current of 7kA with a time constant of 5ms. The hybrid breaker that was developed could provide protection for 750VDC traction systems. The breaker was equipped with a fault- recognizing circuit based on a current level triggering. An electronic circuit was built for this need and was included in the system. It monitored the system continuously and took action by generating trip signals when a fault was recognized. Interruption was followed by a suitable timing of the fast contact separation in the main breaker and the current-zero creation. An electrodynamically driven mechanism was successfully tested having a dead-time of 300μs to separate the main breaker contacts. Furthermore, a maximum peak current injection of RA at a frequency of 500Hz could be obtained in order to produce an artificial current-zero in the vacuum breaker. A successful current interruption with a prospective value of RA was achieved by the hybrid switching technique. In addition, measures were taken to prevent overvoltages. Experimentally, the concept of a hybrid breaker was compared with the functioning of all mechanical (air breaker) and all electronical (IGCT breaker) versions. Although a single stage interrupting method was verified experimentally, two two-stage interrupting methods were analyzed theoretically.

Counter-Learning under Oppression

ERIC Educational Resources Information Center

Kucukaydin, Ilhan

2010-01-01

This qualitative study utilized the method of narrative analysis to explore the counter-learning process of an oppressed Kurdish woman from Turkey. Critical constructivism was utilized to analyze counter-learning; Frankfurt School-based Marcusian critical theory was used to analyze the sociopolitical context and its impact on the oppressed. Key…

21 CFR 866.2180 - Manual colony counter.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Manual colony counter. 866.2180 Section 866.2180 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES IMMUNOLOGY AND MICROBIOLOGY DEVICES Microbiology Devices § 866.2180 Manual colony counter...

21 CFR 866.2180 - Manual colony counter.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Manual colony counter. 866.2180 Section 866.2180 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES IMMUNOLOGY AND MICROBIOLOGY DEVICES Microbiology Devices § 866.2180 Manual colony counter...

21 CFR 866.2180 - Manual colony counter.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Manual colony counter. 866.2180 Section 866.2180 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES IMMUNOLOGY AND MICROBIOLOGY DEVICES Microbiology Devices § 866.2180 Manual colony counter...

21 CFR 866.2180 - Manual colony counter.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Manual colony counter. 866.2180 Section 866.2180 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES IMMUNOLOGY AND MICROBIOLOGY DEVICES Microbiology Devices § 866.2180 Manual colony counter...

21 CFR 866.2180 - Manual colony counter.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Manual colony counter. 866.2180 Section 866.2180 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES IMMUNOLOGY AND MICROBIOLOGY DEVICES Microbiology Devices § 866.2180 Manual colony counter...

21 CFR 864.5220 - Automated differential cell counter.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Automated differential cell counter. 864.5220... § 864.5220 Automated differential cell counter. (a) Identification. An automated differential cell... have the capability to flag, count, or classify immature or abnormal hematopoietic cells of the blood...

Air Proportional Counter

DOEpatents

Simpson, Jr, J A

1950-12-05

A multiple wire counter utilizing air at atmospheric pressure as the ionizing medium and having a window of a nylon sheet of less than 0.5 mil thickness coated with graphite. The window is permeable to alpha particles so that the counter is well adapted to surveying sources of alpha radiation.

21 CFR 864.5220 - Automated differential cell counter.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Automated differential cell counter. 864.5220... § 864.5220 Automated differential cell counter. (a) Identification. An automated differential cell... have the capability to flag, count, or classify immature or abnormal hematopoietic cells of the blood...

21 CFR 864.5220 - Automated differential cell counter.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Automated differential cell counter. 864.5220... § 864.5220 Automated differential cell counter. (a) Identification. An automated differential cell... have the capability to flag, count, or classify immature or abnormal hematopoietic cells of the blood...

21 CFR 864.5220 - Automated differential cell counter.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Automated differential cell counter. 864.5220... § 864.5220 Automated differential cell counter. (a) Identification. An automated differential cell... have the capability to flag, count, or classify immature or abnormal hematopoietic cells of the blood...

21 CFR 864.5220 - Automated differential cell counter.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Automated differential cell counter. 864.5220... § 864.5220 Automated differential cell counter. (a) Identification. An automated differential cell... have the capability to flag, count, or classify immature or abnormal hematopoietic cells of the blood...

Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

DOEpatents

Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

1999-01-01

A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

Using Counter-Stories to Challenge Stock Stories about Traveller Families

ERIC Educational Resources Information Center

D'Arcy, Kate

2017-01-01

Critical Race Theory (CRT) is formed from a series of different methodological tools to expose and address racism and discrimination. Counter-stories are one of these tools. This article considers the potential of counter-stories as a methodological, theoretical and practical tool to analyse existing educational inequalities for Traveller…

Countering Threat Networks

DTIC Science & Technology

2016-12-21

PLANNING TO COUNTER THREAT NETWORKS  Joint Intelligence Preparation of the Operational Environment and Threat Networks...Army Expeditionary Forensic Facility in Afghanistan ........ E-9 E-4 Exploitation Support to Intelligence Fusion and Decision Making ......... E-10...Approach The groundwork for successful countering threat networks activities starts with information and intelligence to develop an understanding

78 FR 57623 - TRICARE Over-the-Counter Drug Demonstration Project

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-19

... DEPARTMENT OF DEFENSE Office of the Secretary TRICARE Over-the-Counter Drug Demonstration Project AGENCY: Office of the Secretary, DoD. ACTION: Notice of modification to the TRICARE Over-the-Counter Drug...) drugs to be included on the TRICARE uniform formulary. The Department has been engaged in a...

The Counter Terrorist Classroom: Religion, Education, and Security

ERIC Educational Resources Information Center

Gearon, Liam

2013-01-01

The article identifies international cases--from the United States, Europe, and the United Nations--of an emergent interface of religion, education, and security. This is manifest in the uses of religion in education to counter religious extremism, the notional "counter terrorist classroom." To avoid an over-association of extremism with…

Counter-Buffing: A Visual Criticism of Guerrilla Advertising

ERIC Educational Resources Information Center

Lauzon, Robb Conrad; Cooke, Laquana

2017-01-01

This article addresses and explores hip-hop's reclamation of space using transit as a public bulletin. It is situated within counter-publics discourse and couched in the theoretical frameworks offered by visual rhetorical theory. This article also discusses hip-hop counter-publics through guerrilla advertising by former graffiti artists, SKI and…

Single-ended counter-rotating radial turbine for space application

DOEpatents

Coomes, E.P.; Wilson, D.G.; Webb, B.J.; McCabe, S.J.

1987-05-13

A single-ended turbine with counter-rotating blades operating with sodium as the working fluid. The single-ended, counter-rotating feature of the turbine results in zero torque application to a space platform. Thus, maneuvering of the platform is not adversely affected by the turbine. 4 figs.

21 CFR 864.5200 - Automated cell counter.

Code of Federal Regulations, 2014 CFR

2014-04-01

....5200 Automated cell counter. (a) Identification. An automated cell counter is a fully-automated or semi-automated device used to count red blood cells, white blood cells, or blood platelets using a sample of the patient's peripheral blood (blood circulating in one of the body's extremities, such as the arm). These...

21 CFR 864.5200 - Automated cell counter.

Code of Federal Regulations, 2011 CFR

2011-04-01

....5200 Automated cell counter. (a) Identification. An automated cell counter is a fully-automated or semi-automated device used to count red blood cells, white blood cells, or blood platelets using a sample of the patient's peripheral blood (blood circulating in one of the body's extremities, such as the arm). These...

21 CFR 864.5200 - Automated cell counter.

Code of Federal Regulations, 2012 CFR

2012-04-01

....5200 Automated cell counter. (a) Identification. An automated cell counter is a fully-automated or semi-automated device used to count red blood cells, white blood cells, or blood platelets using a sample of the patient's peripheral blood (blood circulating in one of the body's extremities, such as the arm). These...

21 CFR 864.5200 - Automated cell counter.

Code of Federal Regulations, 2013 CFR

2013-04-01

....5200 Automated cell counter. (a) Identification. An automated cell counter is a fully-automated or semi-automated device used to count red blood cells, white blood cells, or blood platelets using a sample of the patient's peripheral blood (blood circulating in one of the body's extremities, such as the arm). These...

Graded core/shell semiconductor nanorods and nanorod barcodes

DOEpatents

Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

2010-12-14

Graded core/shell semiconductor nanorods and shaped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

Graded core/shell semiconductor nanorods and nanorod barcodes

DOEpatents

Alivisatos, A. Paul; Scher, Erik C.; Manna, Liberato

2013-03-26

Graded core/shell semiconductor nanorods and shapped nanorods are disclosed comprising Group II-VI, Group III-V and Group IV semiconductors and methods of making the same. Also disclosed are nanorod barcodes using core/shell nanorods where the core is a semiconductor or metal material, and with or without a shell. Methods of labeling analytes using the nanorod barcodes are also disclosed.

75 FR 16887 - Self-Regulatory Organizations; NASDAQ OMX PHLX, Inc.; Order Granting Approval of Proposed Rule...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-02

... the Number of Components in the PHLX Semiconductor Sector SM Known as SOX SM , on Which Options are... expand the number of components in the PHLX Semiconductor Sector\\SM\\ known as SOX\\SM\\, on which options... 240.19b-4. \\3\\ PHLX Semiconductor Sector\\SM\\ may also be known as PHLX Semiconductor Index or PHLX...

GASEOUS SCINTILLATION COUNTER

DOEpatents

Eggler, C.; Huddleston, C.M.

1959-04-28

A gaseous excitation counter for detecting the presence amd measuring the energy of subatomic particles and electromagnetic radiation is described. The counter includes a gas-tight chamber filled with an elemental gas capable of producing ultra-violet excitation quanta when irradiated with subatomic particles and electromagnetic radiation. The gas has less than one in a thousand parts ultra-violet absorbing contamination. When nuclear radiation ps present the ultra-violet light produced by the gas strikes a fluorescent material within the counter, responsive to produce visible excitation quanta, and photo-sensitive counting means detect the visible emission.

Effect of angular inflow on the vibratory response of a counter-rotating propeller

NASA Technical Reports Server (NTRS)

Turnberg, J. E.; Brown, P. C.

1985-01-01

This report presents the results of a propeller vibratory stress survey on the Fairey Gannet aircraft aimed at giving an assessment of the difference in vibratory response between single and counter-rotating propeller operation in angular inflow. The survey showed that counter-rotating operation of the propeller had the effect of increasing the IP response of the rear propeller by approximately 25 percent over comparable single-rotation operation while counter-rotating operation did not significantly influence the IP response of the front propeller.

Modeling and simulation of a counter-rotating turbine system for underwater vehicles

NASA Astrophysics Data System (ADS)

Wang, Xinping; Dang, Jianjun

2016-12-01

The structure of a counter-rotating turbine of an underwater vehicle is designed by adding the counter-rotating second-stage turbine disk after the conventional single-stage turbine. The available kinetic energy and the absorption power of the auxiliary system are calculated at different working conditions, and the results show that the power of the main engine and auxiliary system at the counter-rotating turbine system matches well with each other. The experimental simulation of the lubricating oil loop, fuel loop, and seawater loop are completed right before the technology scheme of the counter-rotating turbine system is proposed. The simulation results indicate that the hydraulic transmission system can satisfy the requirements for an underwater vehicle running at a steady sailing or variable working conditions.

User's manual for UCAP: Unified Counter-Rotation Aero-Acoustics Program

NASA Technical Reports Server (NTRS)

Culver, E. M.; Mccolgan, C. J.

1993-01-01

This is the user's manual for the Unified Counter-rotation Aeroacoustics Program (UCAP), the counter-rotation derivative of the UAAP (Unified Aero-Acoustic Program). The purpose of this program is to predict steady and unsteady air loading on the blades and the noise produced by a counter-rotation Prop-Fan. The aerodynamic method is based on linear potential theory with corrections for nonlinearity associated with axial flux induction, vortex lift on the blades, and rotor-to-rotor interference. The theory for acoustics and the theory for individual blade loading and wakes are derived in Unified Aeroacoustics Analysis for High Speed Turboprop Aerodynamics and Noise, Volume 1 (NASA CR-4329). This user's manual also includes a brief explanation of the theory used for the modelling of counter-rotation.

Portable multiplicity counter

DOEpatents

Newell, Matthew R [Los Alamos, NM; Jones, David Carl [Los Alamos, NM

2009-09-01

A portable multiplicity counter has signal input circuitry, processing circuitry and a user/computer interface disposed in a housing. The processing circuitry, which can comprise a microcontroller integrated circuit operably coupled to shift register circuitry implemented in a field programmable gate array, is configured to be operable via the user/computer interface to count input signal pluses receivable at said signal input circuitry and record time correlations thereof in a total counting mode, coincidence counting mode and/or a multiplicity counting mode. The user/computer interface can be for example an LCD display/keypad and/or a USB interface. The counter can include a battery pack for powering the counter and low/high voltage power supplies for biasing external detectors so that the counter can be configured as a hand-held device for counting neutron events.

Digital scale converter

DOEpatents

Upton, Richard G.

1978-01-01

A digital scale converter is provided for binary coded decimal (BCD) conversion. The converter may be programmed to convert a BCD value of a first scale to the equivalent value of a second scale according to a known ratio. The value to be converted is loaded into a first BCD counter and counted down to zero while a second BCD counter registers counts from zero or an offset value depending upon the conversion. Programmable rate multipliers are used to generate pulses at selected rates to the counters for the proper conversion ratio. The value present in the second counter at the time the first counter is counted to the zero count is the equivalent value of the second scale. This value may be read out and displayed on a conventional seven-segment digital display.

User's manual for UCAP: Unified Counter-Rotation Aero-Acoustics Program

NASA Astrophysics Data System (ADS)

Culver, E. M.; McColgan, C. J.

1993-04-01

This is the user's manual for the Unified Counter-rotation Aeroacoustics Program (UCAP), the counter-rotation derivative of the UAAP (Unified Aero-Acoustic Program). The purpose of this program is to predict steady and unsteady air loading on the blades and the noise produced by a counter-rotation Prop-Fan. The aerodynamic method is based on linear potential theory with corrections for nonlinearity associated with axial flux induction, vortex lift on the blades, and rotor-to-rotor interference. The theory for acoustics and the theory for individual blade loading and wakes are derived in Unified Aeroacoustics Analysis for High Speed Turboprop Aerodynamics and Noise, Volume 1 (NASA CR-4329). This user's manual also includes a brief explanation of the theory used for the modelling of counter-rotation.

The effects of gender stereotypic and counter-stereotypic textbook images on science performance.

PubMed

Good, Jessica J; Woodzicka, Julie A; Wingfield, Lylan C

2010-01-01

We investigated the effect of gender stereotypic and counter-stereotypic images on male and female high school students' science comprehension and anxiety. We predicted stereotypic images to induce stereotype threat in females and impair science performance. Counter-stereotypic images were predicted to alleviate threat and enhance female performance. Students read one of three chemistry lessons, each containing the same text, with photograph content varied according to stereotype condition. Participants then completed a comprehension test and anxiety measure. Results indicate that female students had higher comprehension after viewing counter-stereotypic images (female scientists) than after viewing stereotypic images (male scientists). Male students had higher comprehension after viewing stereotypic images than after viewing counter-stereotypic images. Implications for alleviating the gender gap in science achievement are discussed.

Assessing the relationship between pharmacists' job satisfaction and over-the-counter counselling at community pharmacies.

PubMed

Urbonas, Gvidas; Kubilienė, Loreta

2016-04-01

Community pharmacies have an increasing role in self-medication and community health is dependent on the quality of counselling services provided to patients. Some studies show that pharmacists' job satisfaction affects their work quality; other studies found that higher involvement in clinical services increases pharmacists' job satisfaction. To test the relationship between job satisfaction and over-the-counter counselling practice at community pharmacies. Community pharmacies in Lithuania. A convenience sample (n = 305) of community pharmacists participated in the cross-sectional survey where they expressed satisfaction with job and reported on their over-the-counter counselling behaviour on self-report scales. The Partial Least Squares Structural Equation Modelling approach was employed for data analysis. The strength of the relationship between job satisfaction and over-the-counter counselling service. A bidirectional relationship between job satisfaction and over-the-counter counselling service was found. In addition, job satisfaction and over-the-counter counselling quality depended on pharmacists' age. Organizations were recommended to create a counselling friendly environment that would increase pharmacists' job satisfaction and, in return, counselling quality. Also, additional motivation of the retired pharmacists, as well as development of counselling skills of the younger pharmacy workforce, were seen as a means to improve both organizational climate and counselling quality over the counter.

Novel Designs of Quantum Reversible Counters

NASA Astrophysics Data System (ADS)

Qi, Xuemei; Zhu, Haihong; Chen, Fulong; Zhu, Junru; Zhang, Ziyang

2016-11-01

Reversible logic, as an interesting and important issue, has been widely used in designing combinational and sequential circuits for low-power and high-speed computation. Though a significant number of works have been done on reversible combinational logic, the realization of reversible sequential circuit is still at premature stage. Reversible counter is not only an important part of the sequential circuit but also an essential part of the quantum circuit system. In this paper, we designed two kinds of novel reversible counters. In order to construct counter, the innovative reversible T Flip-flop Gate (TFG), T Flip-flop block (T_FF) and JK flip-flop block (JK_FF) are proposed. Based on the above blocks and some existing reversible gates, the 4-bit binary-coded decimal (BCD) counter and controlled Up/Down synchronous counter are designed. With the help of Verilog hardware description language (Verilog HDL), these counters above have been modeled and confirmed. According to the simulation results, our circuits' logic structures are validated. Compared to the existing ones in terms of quantum cost (QC), delay (DL) and garbage outputs (GBO), it can be concluded that our designs perform better than the others. There is no doubt that they can be used as a kind of important storage components to be applied in future low-power computing systems.

Context-based automated defect classification system using multiple morphological masks

DOEpatents

Gleason, Shaun S.; Hunt, Martin A.; Sari-Sarraf, Hamed

2002-01-01

Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy.

PubMed

Lee, Woobin; Choi, Seungbeom; Kim, Kyung Tae; Kang, Jingu; Park, Sung Kyu; Kim, Yong-Hoon

2015-12-23

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption ( A' ) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.

Electrostatic separation for recycling conductors, semiconductors, and nonconductors from electronic waste.

PubMed

Xue, Mianqiang; Yan, Guoqing; Li, Jia; Xu, Zhenming

2012-10-02

Electrostatic separation has been widely used to separate conductors and nonconductors for recycling e-waste. However, the components of e-waste are complex, which can be classified as conductors, semiconductors, and nonconductors according to their conducting properties. In this work, we made a novel attempt to recover the mixtures containing conductors (copper), semiconductors (extrinsic silicon), and nonconductors (woven glass reinforced resin) by electrostatic separation. The results of binary mixtures separation show that the separation of conductor and nonconductor, semiconductor and nonconductor need a higher voltage level while the separation of conductor and semiconductor needs a higher roll speed. Furthermore, the semiconductor separation efficiency is more sensitive to the high voltage level and the roll speed than the conductor separation efficiency. An integrated process was proposed for the multiple mixtures separation. The separation efficiency of conductors and semiconductors can reach 82.5% and 88%, respectively. This study contributes to the efficient recycling of valuable resources from e-waste.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, R.; Pocha, M.D.

1994-08-23

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, Rex; Pocha, Michael D.

1994-01-01

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

Solid state potentiometric gaseous oxide sensor

NASA Technical Reports Server (NTRS)

Wachsman, Eric D. (Inventor); Azad, Abdul Majeed (Inventor)

2003-01-01

A solid state electrochemical cell (10a) for measuring the concentration of a component of a gas mixture (12) includes first semiconductor electrode (14) and second semiconductor electrode (16) formed from first and second semiconductor materials, respectively. The materials are selected so as to undergo a change in resistivity upon contacting a gas component, such as CO or NO. An electrolyte (18) is provided in contact with the first and second semiconductor electrodes. A reference cell can be included in contact with the electrolyte. Preferably, a voltage response of the first semiconductor electrode is opposite in slope direction to that of the second semiconductor electrode to produce a voltage response equal to the sum of the absolute values of the control system uses measured pollutant concentrations to direct adjustment of engine combustion conditions.

Plasma Properties of an Exploding Semiconductor Igniter

NASA Astrophysics Data System (ADS)

McGuirk, J. S.; Thomas, K. A.; Shaffer, E.; Malone, A. L.; Baginski, T.; Baginski, M. E.

1997-11-01

Requirements by the automotive industry for low-cost, pyrotechnic igniters for automotive airbags have led to the development of several semiconductor devices. The properties of the plasma produced by the vaporization of an exploding semiconductor are necessary in order to minimize the electrical energy requirements. This work considers two silicon-based semiconductor devices: the semiconductor bridge (SCB) and the semiconductor junction igniter both consisting of etched silicon with vapor deposited aluminum structures. Electrical current passing through the device heats a narrow junction region to the point of vaporization creating an aluminum and silicon low-temperature plasma. This work will investigate the electrical characteristics of both devices and infer the plasma properties. Furthermore optical spectral measurements will be taken of the exploding devices to estimate the temperature and density of the plasma.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Influence of spontaneous fluctuations on the emission spectrum of an injection semiconductor laser

NASA Astrophysics Data System (ADS)

Gulyaev, Yurii V.; Suris, Robert A.; Tager, A. A.; Élenkrig, B. B.

1988-11-01

A theoretical investigation is made of fluctuation-induced excitation of side longitudinal modes in the emission spectra of semiconductor lasers, including those with an external mirror. It is shown that nonlinear refraction of light in the active region of a semiconductor laser may result in a noise redistribution of the radiation between longitudinal resonator modes and can be responsible for the multimode nature of the average emission spectrum. An analysis is made of the influence of selectivity of an external mirror on the stability of cw operation, minimum line width, and mode composition of the emission spectra of semiconductor lasers. The conditions for maximum narrowing of the emission spectrum of a semiconductor laser with an external selective mirror are identified.

The Morphologies of the Semiconductor Oxides and Their Gas-Sensing Properties

PubMed Central

Lv, Xin; Li, Shuang; Wang, Qingji

2017-01-01

Semiconductor oxide chemoresistive gas sensors are widely used for detecting deleterious gases due to low cost, simple preparation, rapid response and high sensitivity. The performance of gas sensor is greatly affected by the morphology of the semiconductor oxide. There are many semiconductor oxide morphologies, including zero-dimensional, one-dimensional, two-dimensional and three-dimensional ones. The semiconductor oxides with different morphologies significantly enhance the gas-sensing performance. Among the various morphologies, hollow nanostructures and core-shell nanostructures are always the focus of research in the field of gas sensors due to their distinctive structural characteristics and superior performance. Herein the morphologies of semiconductor oxides and their gas-sensing properties are reviewed. This review also proposes a potential strategy for the enhancement of gas-sensing performance in the future. PMID:29189714

Method for depositing high-quality microcrystalline semiconductor materials

DOEpatents

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Semiconductor bridge (SCB) detonator

DOEpatents

Bickes, R.W. Jr.; Grubelich, M.C.

1999-01-19

The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

Surface modifications of photoanodes in dye sensitized solar cells: enhanced light harvesting and reduced recombination

NASA Astrophysics Data System (ADS)

Saxena, Vibha; Aswal, D. K.

2015-06-01

In a quest to harvest solar power, dye-sensitized solar cells (DSSCs) have potential for low-cost eco-friendly photovoltaic devices. The major processes which govern the efficiency of a DSSC are photoelectron generation, injection of photo-generated electrons to the conduction band (CB) of the mesoporous nanocrystalline semiconductor (nc-SC); transport of CB electrons through nc-SC and subsequent collection of CB electrons at the counter electrode (CE) through the external circuit; and dye regeneration by redox couple or hole transport layer (HTL). Most of these processes occur at various interfaces of the photoanode. In addition, recombination losses of photo-generated electrons with either dye or redox molecules take place at the interfaces. Therefore, one of the key requirements for high efficiency is to improve light harvesting of the photoanode and to reduce the recombination losses at various interfaces. In this direction, surface modification of the photoanode is the simplest method among the various other approaches available in the literature. In this review, we present a comprehensive discussion on surface modification of the photoanode, which has been adopted in the literature for not only enhancing light harvesting but also reducing recombination. Various approaches towards surface modification of the photoanode discussed are (i) fluorine-doped tin oxide (FTO)/nc-SC interface modified via a compact layer of semiconductor material which blocks exposed sites of FTO to electrolyte (or HTL), (ii) nc-SC/dye interface modification either through acid treatment resulting in enhanced dye loading due to a positively charged surface or by depositing insulating/semiconducting blocking layer on the nc-SC surface, which acts as a tunneling barrier for recombination, (iii) nc-SC/dye interface modified by employing co-adsorbents which helps in reducing the dye aggregation and thereby recombination, and (iv) dye/electrolyte (or dye/HTL) interface modification using additives which provides surface passivation as well as positive movement of the nc-SC Fermi level owing to negative charge at the surface and hence improves light harvesting and reduced recombination. Finally, we discuss the advantages and disadvantages of various approaches towards high-efficiency DSSCs.

EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

NASA Astrophysics Data System (ADS)

Ólafsson, Sveinn; Sveinbjörnsson, Einar

2010-12-01

A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner on Icelandic National Day In connection with the conference, a summer school for 40 research students was organized by the Nordic LENS network. The summer school took place in Reykjavik on 11-14 June. For more information on the school please visit the website. The next Nordic Semiconductor meeting, NSM 2011, is scheduled to take place in Aarhus, Denmark, 19-22 June 2011. A full participant list is available in the PDF of this article.

Observations of interference between portable particle counters and NOx monitors

NASA Astrophysics Data System (ADS)

Bereznicki, Sarah D.; Kamal, Ali

2013-08-01

Studies in environmental exposure science have developed a preference for smaller devices that can be easily co-located without need for gas standards, such as those instruments utilized in the Near-road Exposures and Effects from Urban Air Pollutants Study (NEXUS). One observation from NEXUS was the potential for instrument interference from alcohol-based particle counters on photometric-based nitrogen oxide (NOx) monitors. This article reports the findings from laboratory tests replicating enclosed-shelter monitoring configurations and operation cycles for a common photometric-based NOx monitor and a widely used alcohol-based particle counter. These tests monitored the NOx response while the particle counter sampling interval and ambient airflow rate were varied to (1) confirm that proximity between the instruments induced interferences, (2) identify any dependencies in NOx monitor recovery on ambient airflow, and (3) determine the time needed for the NOx monitor to recover to pre-interference levels under different atmospheric conditions. During particle counter operations, NOx concentrations responded instantaneously with a several-fold jump above the measurement baseline. When the particle counter was operated for more than 10 min, this interference period also showed a marked decline in the NOx baseline. The overall recovery time of the NOx monitor depended less on the time of particle counter operation, and more on the speed of ambient airflow. If photometric-based NOx monitors need to be operated alongside alcohol-based particle counters, mechanisms must be employed to exhaust alcohol-based vapors from enclosed monitoring environments. Given the strong evidence for interference, however, it is recommended these devices not be operated within close proximity to one another.

Method of preparing nitrogen containing semiconductor material

DOEpatents

Barber, Greg D.; Kurtz, Sarah R.

2004-09-07

A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

Graded core/shell semiconductor nanorods and nanorod barcodes

DOEpatents

Alivisatos, A Paul [Oakland, CA; Scher, Erik C [San Francisco, CA; Manna, Liberato [Palo Del Collie, IT

2009-05-19

Disclosed herein is a graded core/shell semiconductor nanorod having at least a first segment of a core of a Group II-VI, Group III-V or a Group IV semiconductor, a graded shell overlying the core, wherein the graded shell comprises at least two monolayers, wherein the at least two monolayers each independently comprise a Group II-VI, Group III-V or a Group IV semiconductor.

Nanomembrane structures having mixed crystalline orientations and compositions

DOEpatents

Lagally, Max G.; Scott, Shelley A.; Savage, Donald E.

2014-08-12

The present nanomembrane structures include a multilayer film comprising a single-crystalline layer of semiconductor material disposed between two other single-crystalline layers of semiconductor material. A plurality of holes extending through the nanomembrane are at least partially, and preferably entirely, filled with a filler material which is also a semiconductor, but which differs from the nanomembrane semiconductor materials in composition, crystal orientation, or both.

49 CFR 219.103 - Prescribed and over-the-counter drugs.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Prescribed and over-the-counter drugs. 219.103... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CONTROL OF ALCOHOL AND DRUG USE Prohibitions § 219.103 Prescribed and over-the-counter drugs. (a) This subpart does not prohibit the use of a controlled substance (on...

49 CFR 219.103 - Prescribed and over-the-counter drugs.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Prescribed and over-the-counter drugs. 219.103... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CONTROL OF ALCOHOL AND DRUG USE Prohibitions § 219.103 Prescribed and over-the-counter drugs. (a) This subpart does not prohibit the use of a controlled substance (on...

49 CFR 219.103 - Prescribed and over-the-counter drugs.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Prescribed and over-the-counter drugs. 219.103... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CONTROL OF ALCOHOL AND DRUG USE Prohibitions § 219.103 Prescribed and over-the-counter drugs. (a) This subpart does not prohibit the use of a controlled substance (on...

49 CFR 219.103 - Prescribed and over-the-counter drugs.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Prescribed and over-the-counter drugs. 219.103... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CONTROL OF ALCOHOL AND DRUG USE Prohibitions § 219.103 Prescribed and over-the-counter drugs. (a) This subpart does not prohibit the use of a controlled substance (on...

Implications of Counter-Attitudinal Information Exposure in Further Information- Seeking and Attitude Change

ERIC Educational Resources Information Center

Lee, Sangwon

2017-01-01

Introduction: Given that people rely heavily on their party affiliation to make their political decisions, an interesting dilemma occurs when people are exposed to counter-attitudinal information from the party they identify with. This paper examines how exposure to counter-attitudinal messages from the party an individual identifies with…

Using a PC as a Frequency Meter or a Counter.

ERIC Educational Resources Information Center

Sartori, J.; And Others

1995-01-01

Describes hardware that enables the use of an IBM PC microcomputer as a frequency meter or a counter by using the parallel printer port. Eliminates the 16-bit time-day counter through the use of an external time base that can be conveniently set depending on the desired frequency range. (JRH)

Workplace Violence in Early Childhood Settings: A Counter Narrative.

ERIC Educational Resources Information Center

Sumsion, Jennifer

Noting that portrayals of early childhood settings as communities of care distinguish them from other education contexts, this paper presents a counter-narrative that focuses on workplace tensions experienced by an Australian preschool teacher. The counter-narrative was informed by informal interviews held 4 times yearly over a period of 7 years…

49 CFR 219.103 - Prescribed and over-the-counter drugs.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Prescribed and over-the-counter drugs. 219.103... ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CONTROL OF ALCOHOL AND DRUG USE Prohibitions § 219.103 Prescribed and over-the-counter drugs. (a) This subpart does not prohibit the use of a controlled substance (on...

LOW ENERGY COUNTING CHAMBERS

DOEpatents

Hayes, P.M.

1960-02-16

A beta particle counter adapted to use an end window made of polyethylene terephthalate was designed. The extreme thinness of the film results in a correspondingly high transmission of incident low-energy beta particles by the window. As a consequence, the counting efficiency of the present counter is over 40% greater than counters using conventional mica end windows.

Counter-Stereotypes and Images: An Exploratory Research and Some Questions

ERIC Educational Resources Information Center

Morin-Messabel, Christine; Ferrière, Séverine; Martinez, Frederic; Devif, Julie; Reeb, Laurence

2017-01-01

The dynamics of the construction and perpetuation of gender stereotypes are classic research subjects in social psychology and in the field of educational guidelines in France. The most recent government decree aims to counter stereotypes in schools, by exposing pupils to counter-stereotypes. This study examines the effects of activating…

Challenging Colorblindness in Arizona: Latina/o Students' Counter-Narratives of Race and Racism

ERIC Educational Resources Information Center

Cammarota, Julio

2014-01-01

This essay reviews Latina/o students' counter-narratives challenging colorblindness. The author highlights the experiences of students from Tucson Unified School District's Mexican American Studies program. By examining student counter-narratives, the author also identifies race-related terms that are more suitable for dialogue among and with…

Forward shower counters for diffractive physics at the LHC

NASA Astrophysics Data System (ADS)

Albrow, Michael; Collins, Paula; Penzo, Aldo

2014-11-01

The LHC detectors have incomplete angular coverage in the forward direction, for example in the region 6 ≲ |η| ≲ 8, which can be improved with the addition of simple scintillation counters around the beam pipes about 50 m to 120 m from the intersection point. These counters detect showers created by particles hitting the beam pipes and nearby material. The absence of signals in these counters in low pileup conditions is an indication of a forward rapidity gap as a signature of diffraction. In addition, they can be used to detect hadrons from low mass diffractive excitations of the proton, not accompanied by a leading proton but adjacent to a rapidity gap over (e.g.) 3 ≲ |η| ≲ 6. Such a set of forward shower counters, originally used at CDF, was used in CMS (FSC) for high-β* running with TOTEM during LHC Run-1. During LS1 the CMS FSC system is being upgraded for future low pileup runs. A similar system, called HERSCHEL is being installed in LHCb. ALICE is implementing scintillation counters, ADA and ADC, with 4.5 ≲ |η| ≲ 6.4.

Particle shape accounts for instrumental discrepancy in ice core dust size distributions

NASA Astrophysics Data System (ADS)

Folden Simonsen, Marius; Cremonesi, Llorenç; Baccolo, Giovanni; Bosch, Samuel; Delmonte, Barbara; Erhardt, Tobias; Kjær, Helle Astrid; Potenza, Marco; Svensson, Anders; Vallelonga, Paul

2018-05-01

The Klotz Abakus laser sensor and the Coulter counter are both used for measuring the size distribution of insoluble mineral dust particles in ice cores. While the Coulter counter measures particle volume accurately, the equivalent Abakus instrument measurement deviates substantially from the Coulter counter. We show that the difference between the Abakus and the Coulter counter measurements is mainly caused by the irregular shape of dust particles in ice core samples. The irregular shape means that a new calibration routine based on standard spheres is necessary for obtaining fully comparable data. This new calibration routine gives an increased accuracy to Abakus measurements, which may improve future ice core record intercomparisons. We derived an analytical model for extracting the aspect ratio of dust particles from the difference between Abakus and Coulter counter data. For verification, we measured the aspect ratio of the same samples directly using a single-particle extinction and scattering instrument. The results demonstrate that the model is accurate enough to discern between samples of aspect ratio 0.3 and 0.4 using only the comparison of Abakus and Coulter counter data.

Timecourse of mirror and counter-mirror effects measured with transcranial magnetic stimulation

PubMed Central

Cavallo, Andrea; Heyes, Cecilia; Becchio, Cristina; Bird, Geoffrey

2014-01-01

The human mirror system has been the subject of much research over the past two decades, but little is known about the timecourse of mirror responses. In addition, it is unclear whether mirror and counter-mirror effects follow the same timecourse. We used single-pulse transcranial magnetic stimulation to investigate the timecourse of mirror and counter-mirror responses in the human brain. Experiment 1 demonstrated that mirror responses can be measured from around 200 ms after observed action onset. Experiment 2 demonstrated significant effects of counter-mirror sensorimotor training at all timepoints at which a mirror response was found in Experiment 1 (i.e. from 200 ms onward), indicating that mirror and counter-mirror responses follow the same timecourse. By suggesting similarly direct routes for mirror and counter-mirror responses, these results support the associative account of mirror neuron origins whereby mirror responses arise as a result of correlated sensorimotor experience during development. More generally, they contribute to theorizing regarding mirror neuron function by providing some constraints on how quickly mirror responses can influence social cognition. PMID:23709352

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

NASA Technical Reports Server (NTRS)

Danchenko, V.

1974-01-01

Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

The cognitive costs of the counter-stereotypic: gender, emotion, and social presence.

PubMed

McCarty, Megan K; Kelly, Janice R; Williams, Kipling D

2014-01-01

We explored the concurrent and subsequent cognitive consequences of the experience of gender counter-stereotypic emotions. Participants experiencing gender counter-stereotypic emotions were expected to display less emotional expression and demonstrate poorer cognitive performance when in the public condition than when in the private condition. Seventy-one women and 66 men completed an anger- or sadness-inducing task privately or publicly. Participants completed two cognitive tasks: one during and one after the emotion-induction task. Participants exhibited poorer performance during and following gender counter-stereotypic emotions only in the public condition. Direct evidence for greater suppression of gender counter-stereotypic emotions in the public conditions was not obtained. These results suggest that the same public emotional events may be differentially cognitively depleting depending on one's gender, potentially contributing to the perpetuation of stereotypes.

Advanced Prop-fan Engine Technology (APET) single- and counter-rotation gearbox/pitch change mechanism

NASA Technical Reports Server (NTRS)

Reynolds, C. N.

1985-01-01

The preliminary design of advanced technology (1992) turboprop engines for single-rotation prop-fans and conceptual designs of pitch change mechanisms for single- and counter-rotation prop-fan application are discussed. The single-rotation gearbox is a split path, in-line configuration. The counter-rotation gearbox is an in-line, differential planetary design. The pitch change mechanisms for both the single- and counter-rotation arrangements are rotary/hydraulic. The advanced technology single-rotation gearbox yields a 2.4 percent improvement in aircraft fuel burn and a one percent improvement in operating cost relative to a current technology gearbox. The 1992 counter-rotation gearbox is 15 percent lighter, 15 percent more reliable, 5 percent lower in cost, and 45 percent lower in maintenance cost than the 1992 single-rotation gearbox. The pitch controls are modular, accessible, and external.

Surface passivation process of compound semiconductor material using UV photosulfidation

DOEpatents

Ashby, Carol I. H.

1995-01-01

A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

Researchers Validate UV Light's Use in Improving Semiconductors | News |

Science.gov Websites

device. The ability to use different classes of semiconductors could create additional possibilities for integrating a variety of different semiconductors in the future," Park said. The researchers explored

Manipulating semiconductor colloidal stability through doping.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

ZnSe based semiconductor core-shell structures: From preparation to application

NASA Astrophysics Data System (ADS)

Sun, Chengcheng; Gu, Yarong; Wen, Weijia; Zhao, Lijuan

2018-07-01

Inorganic core-shell semiconductor materials have attracted increasing interest in recent years because of the unique structure, stable chemical properties and high performance in devices. With special properties such as a direct band-gap and excellent photoelectrical characteristics, ZnSe based semiconductor core-shell structures are promising materials for applications in such fields as photocatalysts, light-emitting diodes, solar cells, photodetectors, biomedical science and so on. However, few reviews on ZnSe based semiconductor core-shell structures have been reported so far. Therefore this manuscript mainly focuses on the research activities on ZnSe based semiconductor core-shell composites including various preparation methods and the applications of these core-shell structures, especially in photocatalysts, light emitting, solar cells and photodetectors. The possibilities and limitations of studies on ZnSe based semiconductor core-shell composites are also highlighted.

Semiconductor Laser Low Frequency Noise Characterization

NASA Technical Reports Server (NTRS)

Maleki, Lute; Logan, Ronald T.

1996-01-01

This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures

PubMed Central

Sang, Liwen; Hu, Junqing; Zou, Rujia; Koide, Yasuo; Liao, Meiyong

2013-01-01

The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high speed, high signal-to-noise ratio, high stability, and simplicity (called 6S requirements). Here, we propose a universal strategy to develop multicolor photodetectors with arbitrary spectral selectivity by integrating various semiconductor nanostructures on a wide-bandgap semiconductor or an insulator substrate. Because the photoresponse of each spectral band is determined by each semiconductor nanostructure or the semiconductor substrate, multicolor detection satisfying 6S requirements can be readily satisfied by selecting the right semiconductors. PMID:23917790

Recent progress in magnetic iron oxide-semiconductor composite nanomaterials as promising photocatalysts

NASA Astrophysics Data System (ADS)

Wu, Wei; Changzhong Jiang, Affc; Roy, Vellaisamy A. L.

2014-11-01

Photocatalytic degradation of toxic organic pollutants is a challenging tasks in ecological and environmental protection. Recent research shows that the magnetic iron oxide-semiconductor composite photocatalytic system can effectively break through the bottleneck of single-component semiconductor oxides with low activity under visible light and the challenging recycling of the photocatalyst from the final products. With high reactivity in visible light, magnetic iron oxide-semiconductors can be exploited as an important magnetic recovery photocatalyst (MRP) with a bright future. On this regard, various composite structures, the charge-transfer mechanism and outstanding properties of magnetic iron oxide-semiconductor composite nanomaterials are sketched. The latest synthesis methods and recent progress in the photocatalytic applications of magnetic iron oxide-semiconductor composite nanomaterials are reviewed. The problems and challenges still need to be resolved and development strategies are discussed.

Single steady frequency and narrow-linewidth external-cavity semiconductor laser

NASA Astrophysics Data System (ADS)

Zhao, Weirui; Jiang, Pengfei; Xie, Fuzeng

2003-11-01

A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10-3°C by temperature control system. The experiments have been carried out and the results obtained - the spectral line width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

Visible light photoreduction of CO.sub.2 using heterostructured catalysts

DOEpatents

Matranga, Christopher; Thompson, Robert L; Wang, Congjun

2015-03-24

The method provides for use of sensitized photocatalyst for the photocatalytic reduction of CO.sub.2 under visible light illumination. The photosensitized catalyst is comprised of a wide band gap semiconductor material, a transition metal co-catalyst, and a semiconductor sensitizer. The semiconductor sensitizer is photoexcited by visible light and forms a Type II band alignment with the wide band gap semiconductor material. The wide band gap semiconductor material and the semiconductor sensitizer may be a plurality of particles, and the particle diameters may be selected to accomplish desired band widths and optimize charge injection under visible light illumination by utilizing quantum size effects. In a particular embodiment, CO.sub.2 is reduced under visible light illumination using a CdSe/Pt/TiO2 sensitized photocatalyst with H.sub.2O as a hydrogen source.

Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1983-01-01

Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

COUNTER Improvised Explosive Device (C-IED) Operations as an Element of Counter Insurgency (COIN): Balancing C-IED Efforts to Support Commander International Security Assistance Force (COMISAF) Operational Objectives

DTIC Science & Technology

2010-10-27

central to the enemy‟s operational design, defense and industry efforts to counter the IED with technology have been aggressive. The US has spent...and industry efforts to counter the IED with technology have been aggressive. The US has spent billions of dollars to mitigate the effects of IEDs...2001 has claimed the lives of over 1,700 United States and Coalition Force (CF) service men and women ; over six times that many have been wounded.1

Neutron range spectrometer

DOEpatents

Manglos, S.H.

1988-03-10

A neutron range spectrometer and method for determining the neutron energy spectrum of a neutron emitting source are disclosed. Neutrons from the source are colliminated along a collimation axis and a position sensitive neutron counter is disposed in the path of the collimated neutron beam. The counter determines positions along the collimation axis of interactions between the neutrons in the neutron beam and a neutron-absorbing material in the counter. From the interaction positions, a computer analyzes the data and determines the neutron energy spectrum of the neutron beam. The counter is preferably shielded and a suitable neutron-absorbing material is He-3. 1 fig.

The effect of thermal neutron field slagging caused by cylindrical BF3 counters in diffusion media

NASA Technical Reports Server (NTRS)

Gorshkov, G. V.; Tsvetkov, O. S.; Yakovlev, R. M.

1975-01-01

Computations are carried out in transport approximation (first collision method) for the attenuation of the field of thermal neutrons formed in counters of the CHM-8 and CHMO-5 type. The deflection of the thermal neutron field is also obtained near the counters and in the air (shade effect) and in various decelerating media (water, paraffin, plexiglas) for which the calculations are carried out on the basis of diffusion theory. To verify the calculations, the distribution of the density of the thermal neutrons at various distances from the counter in the water is measured.

Deposition method for producing silicon carbide high-temperature semiconductors

DOEpatents

Hsu, George C.; Rohatgi, Naresh K.

1987-01-01

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Electronic structure of ferromagnetic semiconductor material on the monoclinic and rhombohedral ordered double perovskites La{sub 2}FeCoO{sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fuh, Huei-Ru; Chang, Ching-Ray; Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan

2015-05-07

Double perovskite La{sub 2}FeCoO{sub 6} with monoclinic structure and rhombohedra structure show as ferromagnetic semiconductor based on density functional theory calculation. The ferromagnetic semiconductor state can be well explained by the superexchange interaction. Moreover, the ferromagnetic semiconductor state remains under the generalized gradient approximation (GGA) and GGA plus onsite Coulomb interaction calculation.

Methods and devices for fabricating and assembling printable semiconductor elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Roadmap on semiconductor-cell biointerfaces

NASA Astrophysics Data System (ADS)

Tian, Bozhi; Xu, Shuai; Rogers, John A.; Cestellos-Blanco, Stefano; Yang, Peidong; Carvalho-de-Souza, João L.; Bezanilla, Francisco; Liu, Jia; Bao, Zhenan; Hjort, Martin; Cao, Yuhong; Melosh, Nicholas; Lanzani, Guglielmo; Benfenati, Fabio; Galli, Giulia; Gygi, Francois; Kautz, Rylan; Gorodetsky, Alon A.; Kim, Samuel S.; Lu, Timothy K.; Anikeeva, Polina; Cifra, Michal; Krivosudský, Ondrej; Havelka, Daniel; Jiang, Yuanwen

2018-05-01

This roadmap outlines the role semiconductor-based materials play in understanding the complex biophysical dynamics at multiple length scales, as well as the design and implementation of next-generation electronic, optoelectronic, and mechanical devices for biointerfaces. The roadmap emphasizes the advantages of semiconductor building blocks in interfacing, monitoring, and manipulating the activity of biological components, and discusses the possibility of using active semiconductor-cell interfaces for discovering new signaling processes in the biological world.

Methods and devices for fabricating and assembling printable semiconductor elements

DOEpatents

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}

DOEpatents

Mickelsen, R.A.; Chen, W.S.

1985-08-13

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2

DOEpatents

Mickelsen, R.A.; Chen, W.S.

1982-06-15

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

Group I-III-VI.sub.2 semiconductor films for solar cell application

DOEpatents

Basol, Bulent M.; Kapur, Vijay K.

1991-01-01

This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI) Mass Spectrometric Approaches to Proteome Analysis

PubMed Central

Kailasa, Suresh Kumar; Cheng, Kuang-Hung; Wu, Hui-Fen

2013-01-01

Semiconductor quantum dots (QDs) or nanoparticles (NPs) exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs) in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis. PMID:28788422

III-V semiconductor resonators: A new strategy for broadband light perfect absorbers

NASA Astrophysics Data System (ADS)

Liu, Xiaoshan; Chen, Jian; Liu, Jiasong; Huang, Zhenping; Yu, Meidong; Pan, Pingping; Liu, Zhengqi

2017-11-01

Broadband light perfect absorbers (BPAs) are desirable for applications in numerous optoelectronics devices. In this work, a semiconductor-based broadband light perfect absorber (S-BPA) has been numerically demonstrated by utilizing plasmonlike resonances of high-index semiconductor resonators. A maximal absorption of 99.7% is observed in the near-infrared region. By taking the absorption above 80% into account, the spectral bandwidth reaches 340 nm. The absorption properties mainly originate from the optical cavity modes induced by the cylinder resonators and ultrathin semiconductor film. These optical properties and simple structural features can maintain the absorber platform with wide applications in semiconductor optoelectronics.

Monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Barfknecht, Andrew T. (Inventor); Garcia, Graham A. (Inventor); Russell, Stephen D. (Inventor); Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

PubMed

Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

2014-01-01

The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

DOEpatents

McKee, Rodney A.; Walker, Frederick J.; Chisholm, Matthew F.

2000-01-01

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

Field-effect P-N junction

DOEpatents

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

PubMed

Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

2014-12-23

An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Near-infrared light emitting device using semiconductor nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

Charge regulation at semiconductor-electrolyte interfaces.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2015-07-01

The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

Architectures and criteria for the design of high efficiency organic photovoltaic cells

DOEpatents

Rand, Barry; Forrest, Stephen R; Burk, Diana Pendergrast

2015-03-24

An organic photovoltaic cell includes an anode and a cathode, and a plurality of organic semiconductor layers between the anode and the cathode. At least one of the anode and the cathode is transparent. Each two adjacent layers of the plurality of organic semiconductor layers are in direct contact. The plurality of organic semiconductor layers includes an intermediate layer consisting essentially of a photoconductive material, and two sets of at least three layers. A first set of at least three layers is between the intermediate layer and the anode. Each layer of the first set consists essentially of a different organic semiconductor material having a higher LUMO and a higher HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the cathode. A second set of at least three layers is between the intermediate layer and the cathode. Each layer of the second set consists essentially of a different organic semiconductor material having a lower LUMO and a lower HOMO, relative to the material of an adjacent layer of the plurality of organic semiconductor layers closer to the anode.

Thermally robust semiconductor optical amplifiers and laser diodes

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

2002-01-01

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Route to the Smallest Doped Semiconductor: Mn(2+)-Doped (CdSe)13 Clusters.

PubMed

Yang, Jiwoong; Fainblat, Rachel; Kwon, Soon Gu; Muckel, Franziska; Yu, Jung Ho; Terlinden, Hendrik; Kim, Byung Hyo; Iavarone, Dino; Choi, Moon Kee; Kim, In Young; Park, Inchul; Hong, Hyo-Ki; Lee, Jihwa; Son, Jae Sung; Lee, Zonghoon; Kang, Kisuk; Hwang, Seong-Ju; Bacher, Gerd; Hyeon, Taeghwan

2015-10-14

Doping semiconductor nanocrystals with magnetic transition-metal ions has attracted fundamental interest to obtain a nanoscale dilute magnetic semiconductor, which has unique spin exchange interaction between magnetic spin and exciton. So far, the study on the doped semiconductor NCs has usually been conducted with NCs with larger than 2 nm because of synthetic challenges. Herein, we report the synthesis and characterization of Mn(2+)-doped (CdSe)13 clusters, the smallest doped semiconductors. In this study, single-sized doped clusters are produced in large scale. Despite their small size, these clusters have semiconductor band structure instead of that of molecules. Surprisingly, the clusters show multiple excitonic transitions with different magneto-optical activities, which can be attributed to the fine structure splitting. Magneto-optically active states exhibit giant Zeeman splittings up to elevated temperatures (128 K) with large g-factors of 81(±8) at 4 K. Our results present a new synthetic method for doped clusters and facilitate the understanding of doped semiconductor at the boundary of molecules and quantum nanostructure.

General Observation of Photocatalytic Oxygen Reduction to Hydrogen Peroxide by Organic Semiconductor Thin Films and Colloidal Crystals.

PubMed

Gryszel, Maciej; Sytnyk, Mykhailo; Jakešová, Marie; Romanazzi, Giuseppe; Gabrielsson, Roger; Heiss, Wolfgang; Głowacki, Eric Daniel

2018-04-25

Low-cost semiconductor photocatalysts offer unique possibilities for industrial chemical transformations and energy conversion applications. We report that a range of organic semiconductors are capable of efficient photocatalytic oxygen reduction to H 2 O 2 in aqueous conditions. These semiconductors, in the form of thin films, support a 2-electron/2-proton redox cycle involving photoreduction of dissolved O 2 to H 2 O 2 , with the concurrent photooxidation of organic substrates: formate, oxalate, and phenol. Photochemical oxygen reduction is observed in a pH range from 2 to 12. In cases where valence band energy of the semiconductor is energetically high, autoxidation competes with oxidation of the donors, and thus turnover numbers are low. Materials with deeper valence band energies afford higher stability and also oxidation of H 2 O to O 2 . We found increased H 2 O 2 evolution rate for surfactant-stabilized nanoparticles versus planar thin films. These results evidence that photochemical O 2 reduction may be a widespread feature of organic semiconductors, and open potential avenues for organic semiconductors for catalytic applications.

Multicultural Young Adult Literature as a Form of Counter-Storytelling

ERIC Educational Resources Information Center

Hughes-Hassell, Sandra

2013-01-01

Counter-storytelling is defined by critical race theory scholars as a method of telling the stories of those people whose experiences are not often told, including people of color, the poor, and members of the LGBTQ community. This article discusses multicultural young adult literature as a form of counter-storytelling, with an emphasis on how…

DOSIMETRIC MEASUREMENTS ON THE SECOND SOVIET SPACESHIP SATELLITE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savenko, I.A.; Pisarenko, N.F.; Shavrin, P.I.

1963-02-01

Readings of counters placed inside Sputnik II are given for one portion of its trajectory. The readings were taken by a gas-discharge counter STS-5 and a NaI crystal scintillator counter that registered gamma quanta, charged particles with a 25-kev counting threshold, and the aggregate energy liberation of ionizing radiations in the crystal. (C.E.S.)

Counter - Drug: Mandate for the Army.

DTIC Science & Technology

1991-03-01

this comprehensive review will provide a basis for responding to new missions assigned...observations for determining the short-, mid-, and long-term direction of Army support to the national counter-drug effort. Also, this comprehensive review will provide...and long-term direction of Army support to the national counter-drug effort. Also, this comprehensive review will provide a basis for responding

Racism and Linguicism: Engaging Language Minority Pre-Service Teachers in Counter-Storytelling

ERIC Educational Resources Information Center

Cho, Hyesun

2017-01-01

This study examines how language minority pre-service teachers engaged in the discussion of racism and linguicism through counter-storytelling informed by Critical Race Theory (CRT). Counter-stories can act as a medium through which minority students can unpack the power relations embedded in academic learning. This study also explores ways in…

21 CFR 310.527 - Drug products containing active ingredients offered over-the-counter (OTC) for external use as...

Code of Federal Regulations, 2012 CFR

2012-04-01

... offered over-the-counter (OTC) for external use as hair growers or for hair loss prevention. 310.527... products containing active ingredients offered over-the-counter (OTC) for external use as hair growers or for hair loss prevention. (a) Amino acids, aminobenzoic acid, ascorbic acid, benzoic acid, biotin and...

21 CFR 310.527 - Drug products containing active ingredients offered over-the-counter (OTC) for external use as...

Code of Federal Regulations, 2014 CFR

2014-04-01

... offered over-the-counter (OTC) for external use as hair growers or for hair loss prevention. 310.527... products containing active ingredients offered over-the-counter (OTC) for external use as hair growers or for hair loss prevention. (a) Amino acids, aminobenzoic acid, ascorbic acid, benzoic acid, biotin and...

21 CFR 310.527 - Drug products containing active ingredients offered over-the-counter (OTC) for external use as...

Code of Federal Regulations, 2013 CFR

2013-04-01

... offered over-the-counter (OTC) for external use as hair growers or for hair loss prevention. 310.527... products containing active ingredients offered over-the-counter (OTC) for external use as hair growers or for hair loss prevention. (a) Amino acids, aminobenzoic acid, ascorbic acid, benzoic acid, biotin and...

78 FR 46395 - Self-Regulatory Organizations; Chicago Board Options Exchange, Incorporated; Notice of Filing and...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-07-31

... after logon 10:00:020--CAS receives a message from Client Application --Counter re-starts 10:00:070--No... receives a message from Client Application --Counter restarts (2) 10:00:000--Heartbeat Request sent to Client Application within login 10:00:020--CAS receives a message from Client Application --Counter re...

Teacher Counter Stories to a Citizenship Education Mega Policy Narrative. Preparing for Citizenship in Chile

ERIC Educational Resources Information Center

Cavieres-Fernández, Eduardo

2017-01-01

The present article focuses on the counter stories of two Chilean social studies high school teachers. Counter stories describe how teachers use their professional experience to confront those mega narratives composed of dominant educational policies that impinge upon their pedagogical practices. The mega narrative described in this study as a…

"Let His Voice Be Heard": A Community's Response to Inclusion of an Indigenous Counter-Narrative in the District Curriculum

ERIC Educational Resources Information Center

McCarthy, Glenda; Stanton, Christine Rogers

2017-01-01

Curricular counter-narratives can affirm the experiences of marginalized youth, but, given their complexity and unfamiliarity, they can also generate discord between community members. This case study analyzes documents, observations, and interviews to explore ways an Indigenous counter-narrative can create space for multicultural education within…

26 CFR 1.1092(c)-3 - Qualifying over-the-counter options.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 26 Internal Revenue 11 2010-04-01 2010-04-01 true Qualifying over-the-counter options. 1.1092(c)-3...-counter options. (a) In general. Under section 1092(c)(4)(B)(i), an equity option is not a qualified covered call option unless it is traded on a national securities exchange that is registered with the...

Travels with Chairman of the Joint Chiefs of Staff, Marine General Peter

Science.gov Websites

that time. Story Counter-drug Efforts May Aid Afghanistan BOGOTA, Colombia, Jan. 20, 2007 – The long experience in its counter-drug effort to help the Afghan government fight a similar battle. " has working the counter-drug (issue)," Marine Gen. Peter Pace said. "It's been a very

Who You Callin' White?! A Critical Counter-Story on Colouring White Identity

ERIC Educational Resources Information Center

Matias, Cheryl E.

2013-01-01

This action research, which utilizes critical race theory's counter-storytelling, analyses a process of debunking White students' epistemology of ignorance in a history course at an urban public high school. After piloting a raced curriculum that deliberately re-centers marginalized counter-stories of students of colour, I document its…

Norms in Conflict: Statecraft, Preventive Force, and Counter Proliferation

DTIC Science & Technology

2016-12-01

power. Finally, the ethical character of norms offers a framework for the attacking state to justify its actions to the international community ...national identity, sanctions, and ethics play in counter-proliferation strategies. Finally, it concludes by offering policy recommendations for...role that national identity, sanctions, and ethics play in counter-proliferation strategies. Finally, it concludes by offering policy

Experimental investigation of edge hardening and edge cracking sensitivity of burr-free parts

NASA Astrophysics Data System (ADS)

Senn, Sergei; Liewald, Mathias

2018-05-01

This experimental study is focused on characterisation of edge hardening of sheet metal and remaining formability of differently prepared cutted edges. Edge cracking sensitivity of counter cutted, shear cutted, recutted and water-jet cutted components are compared and evaluated. Subsequently, edge hardening and hole expansion ratio were correlated for material HC420 LA with sheet thickness of t = 2 mm. As other studies show, the cutting edge surface quality influences the hole expansion ratio: a high clear cut surface increases formability of cutting edges, whereas micro cracks and rough surfaces result into a large fracture surface, which impact remaining formability noticeably. Thus, cutting edges with lower edge hardening behaviour in conjunction with a higher clear cut surface exhibit higher hole expansion ratios. Counter cutting and the recutting do show a similar effect on edge hardening. Using the hole expansion test, it was possible to prove that counter cutted components show a significantly lower edge cracking sensitivity in comparison to conventionally shear cutted components. The hole expansion ratio of counter cutted specimens looks balanced and is comparable to the hole expansion ratio measured from specimens with recutted or water jet cutted edges. The significant difference of the investigated cutting processes is characterized by size of clear cutting area. This area of recutted edges emerges larger than the area of counter cutted specimens, which evidently leads to an increased hole expansion ratio of recutted specimens compared to conventionally shear cutted ones. However, it is important to note that the hole expansion ratio of counter cutted and recutted specimens appear fairly balanced, but counter cutted samples indeed can be produced burr-free. Using counter cutting technology, it is possible to produce burr free surfaces with high edge formability.

Macrophage migration inhibitory factor counter-regulates dexamethasone-induced annexin 1 expression and influences the release of eicosanoids in murine macrophages.

PubMed

Sun, Yu; Wang, Yu; Li, Jia-Hui; Zhu, Shi-Hui; Tang, Hong-Tai; Xia, Zhao-Fan

2013-10-01

Macrophage migration inhibitory factor (MIF), a pro-inflammatory cytokine and glucocorticoid (GC) counter-regulator, has emerged as an important modulator of inflammatory responses. However, the molecular mechanisms of MIF counter-regulation of GC still remain incomplete. In the present study, we investigated whether MIF mediated the counter-regulation of the anti-inflammatory effect of GC by affecting annexin 1 in RAW 264.7 macrophages. We found that stimulation of RAW 264.7 macrophages with lipopolysaccharide (LPS) resulted in down-regulation of annexin 1, while GC dexamethasone (Dex) or Dex plus LPS led to significant up-regulation of annexin 1 expression. RNA interference-mediated knockdown of intracellular MIF increased annexin 1 expression with or without incubation of Dex, whereas Dex-induced annexin 1 expression was counter-regulated by the exogenous application of recombinant MIF. Moreover, recombinant MIF counter-regulated, in a dose-dependent manner, inhibition of cytosolic phospholipase A2α (cPLA2α) activation and prostaglandin E2 (PGE2 ) and leukotriene B4 (LTB4 ) release by Dex in RAW 264.7 macrophages stimulated with LPS. Endogenous depletion of MIF enhanced the effects of Dex, reflected by further decease of cPLA2α expression and lower PGE2 and LTB4 release in RAW 264.7 macrophages. Based on these data, we suggest that MIF counter-regulates Dex-induced annexin 1 expression, further influencing the activation of cPLA2α and the release of eicosanoids. These findings will add new insights into the mechanisms of MIF counter-regulation of GC. © 2013 John Wiley & Sons Ltd.

Energetics of the Semiconductor-Electrolyte Interface.

ERIC Educational Resources Information Center

Turner, John A.

1983-01-01

The use of semiconductors as electrodes for electrochemistry requires an understanding of both solid-state physics and electrochemistry, since phenomena associated with both disciplines are seen in semiconductor/electrolyte systems. The interfacial energetics of these systems are discussed. (JN)

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

NASA Technical Reports Server (NTRS)

Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

1979-01-01

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

Early Stages of Interface Formation at Compound Semiconductor Surfaces Studied by Scanning Tunneling Microscopy

DTIC Science & Technology

1991-10-01

classical image potential in an ideal creasing gap separation, that is specific to the form of the metal- insulator -semiconductor (MIS) junction...with which one can precisely adjust s, and hence continuously vary the vacvuum barrier, is a potentially valuable tool for investigating this effect- By... insulator -semiconductor (MIS) junction similar to that shown in Fig. I diverge at the semiconductor-vacuum and vacuum-metal interfaces [7,81. These

Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Hughes, Steven; Citrin, David

1998-01-01

We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

The AMOS cell - An improved metal-semiconductor solar cell. [Antireflection coated Metal Oxide Semiconductor

NASA Technical Reports Server (NTRS)

Stirn, R. J.; Yeh, Y.-C. M.

1975-01-01

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies

NASA Astrophysics Data System (ADS)

Kotadiya, Naresh B.; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-02-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Creating semiconductor metafilms with designer absorption spectra

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Soo Jin; Fan, Pengyu; Kang, Ju-Hyung

The optical properties of semiconductors are typically considered intrinsic and fixed. Here we leverage the rapid developments in the field of optical metamaterials to create ultrathin semiconductor metafilms with designer absorption spectra. We show how such metafilms can be constructed by placing one or more types of high-index semiconductor antennas into a dense array with subwavelength spacings. It is argued that the large absorption cross-section of semiconductor antennas and their weak near-field coupling open a unique opportunity to create strongly absorbing metafilms whose spectral absorption properties directly reflect those of the individual antennas. Using experiments and simulations, we demonstrate thatmore » near-unity absorption at one or more target wavelengths of interest can be achieved in a sub-50-nm-thick metafilm using judiciously sized and spaced Ge nanobeams. The ability to create semiconductor metafilms with custom absorption spectra opens up new design strategies for planar optoelectronic devices and solar cells.« less

Organic semiconductor crystals.

PubMed

Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

2018-01-22

Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

PubMed

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Crystal growth of device quality GaAs in space

NASA Technical Reports Server (NTRS)

Gatos, H. C.; Lagowski, J.

1986-01-01

It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

Photon detector configured to employ the Gunn effect and method of use

DOEpatents

Cich, Michael J

2015-03-17

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

DOEpatents

Forrest, Stephen R.; Wei, Guodan

2010-07-06

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

A compact semiconductor digital interferometer and its applications

NASA Astrophysics Data System (ADS)

Britsky, Oleksander I.; Gorbov, Ivan V.; Petrov, Viacheslav V.; Balagura, Iryna V.

2015-05-01

The possibility of using semiconductor laser interferometers to measure displacements at the nanometer scale was demonstrated. The creation principles of miniature digital Michelson interferometers based on semiconductor lasers were proposed. The advanced processing algorithm for the interferometer quadrature signals was designed. It enabled to reduce restrictions on speed of measured movements. A miniature semiconductor digital Michelson interferometer was developed. Designing of the precision temperature stability system for miniature low-cost semiconductor laser with 0.01ºС accuracy enabled to use it for creation of compact interferometer rather than a helium-neon one. Proper firmware and software was designed for the interferometer signals real-time processing and conversion in to respective shifts. In the result the relative displacement between 0-500 mm was measured with a resolution of better than 1 nm. Advantages and disadvantages of practical use of the compact semiconductor digital interferometer in seismometers for the measurement of shifts were shown.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors.

PubMed

Fluegel, Brian; Mialitsin, Aleksej V; Beaton, Daniel A; Reno, John L; Mascarenhas, Angelo

2015-05-28

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10(-4). Comparing our strain sensitivity and signal strength in Al(x)Ga(1-x)As with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10(3), thus obviating key constraints in semiconductor strain metrology.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

PubMed Central

Fluegel, Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; Reno, John L.; Mascarenhas, Angelo

2015-01-01

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10−4. Comparing our strain sensitivity and signal strength in AlxGa1−xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 103, thus obviating key constraints in semiconductor strain metrology. PMID:26017853

Multianode cylindrical proportional counter for high count rates

DOEpatents

Hanson, J.A.; Kopp, M.K.

1980-05-23

A cylindrical, multiple-anode proportional counter is provided for counting of low-energy photons (< 60 keV) at count rates of greater than 10/sup 5/ counts/sec. A gas-filled proportional counter cylinder forming an outer cathode is provided with a central coaxially disposed inner cathode and a plurality of anode wires disposed in a cylindrical array in coaxial alignment with and between the inner and outer cathodes to form a virtual cylindrical anode coaxial with the inner and outer cathodes. The virtual cylindrical anode configuration improves the electron drift velocity by providing a more uniform field strength throughout the counter gas volume, thus decreasing the electron collection time following the detection of an ionizing event. This avoids pulse pile-up and coincidence losses at these high count rates. Conventional RC position encoding detection circuitry may be employed to extract the spatial information from the counter anodes.

Informational and symbolic content of over-the-counter drug advertising on television.

PubMed

Tsao, J C

1997-01-01

The informational and symbolic content of 150 over-the-counter drug commercials on television are empirically analyzed in this study. Results on the informational content suggest that over-the-counter drug ads tend to focus on the concern of what the drug will do for the consumer, rather than on the reasons why the drug should be ingested. Accordingly, advertising strategy is centered on consumer awareness of the product as the primary goal. Educational commitment, however, did not seem to be blended into the promotional efforts for over-the-counter drugs. Findings on the symbolic content of over-the-counter drug ads reveal that drug images have been distorted. Performance of most drugs has been portrayed to be simple resolutions to relieve the symptom. Moreover, a casual attitude toward drug usage is encouraged in the commercials, while time lapse of drug effects is overlooked.

Economically synthesized NiCo2S4/reduced graphene oxide composite as efficient counter electrode in dye-sensitized solar cell

NASA Astrophysics Data System (ADS)

Nan, Hui; Han, Jianhua; Luo, Qiang; Yin, Xuewen; Zhou, Yu; Yao, Zhibo; Zhao, Xiaochong; Li, Xin; Lin, Hong

2018-04-01

Exploiting efficient Pt-free counter-electrode materials with low cost and highly catalytic property is a hot topic in the field of Dye-sensitized solar cells (DSCs). Here, NiCo2S4/reduced graphene oxide (RGO) was prepared via an economical synthesis route, and the as-prepared composite exhibited comparable electrocatalytic property with the conventional Pt electrode as the counter-electrode. Notably, the introduction of RGO into the NiCo2S4 counter-electrode induces a significantly promoted electrocatalytic rate towards the triiodide reduction than that of pristine NiCo2S4 by increasing surface area in the composite electrode, as revealed by electrochemical impedance spectroscopic measurement and Tafel polarization measurement. The easy synthesis, low cost and excellent electrochemical performance of the NiCo2S4/RGO composites enable themselves to serve as promising counter-electrode candidates for efficient DSCs.

Multianode cylindrical proportional counter for high count rates

DOEpatents

Hanson, James A.; Kopp, Manfred K.

1981-01-01

A cylindrical, multiple-anode proportional counter is provided for counting of low-energy photons (<60 keV) at count rates of greater than 10.sup.5 counts/sec. A gas-filled proportional counter cylinder forming an outer cathode is provided with a central coaxially disposed inner cathode and a plurality of anode wires disposed in a cylindrical array in coaxial alignment with and between the inner and outer cathodes to form a virtual cylindrical anode coaxial with the inner and outer cathodes. The virtual cylindrical anode configuration improves the electron drift velocity by providing a more uniform field strength throughout the counter gas volume, thus decreasing the electron collection time following the detection of an ionizing event. This avoids pulse pile-up and coincidence losses at these high count rates. Conventional RC position encoding detection circuitry may be employed to extract the spatial information from the counter anodes.

Demonstration of slow light propagation in an optical fiber under dual pump light with co-propagation and counter-propagation

NASA Astrophysics Data System (ADS)

Qiu, Wei; Liu, Jianjun; Wang, Yuda; Yang, Yujing; Gao, Yuan; Lv, Pin; Jiang, Qiuli

2018-04-01

In this paper, a general theory of coherent population oscillation effect in an Er3+ -doped fiber under the dual-frequency pumping laser with counter-propagation and co-propagation at room temperature is presented. Using the numerical simulation, in case of dual frequency light waves (1480 nm and 980 nm) with co-propagation and counter-propagation, we analyze the effect of the pump optical power ratio (M) on the group speed of light. The group velocity of light can be varied with the change of M. We research the time delay and fractional delay in an Er3+-doped fiber under the dual-frequency pumping laser with counter-propagation and co-propagation. Compared to the methods of the single pumping, the larger time delay can be got by using the technique of dual-frequency laser pumped fiber with co-propagation and counter-propagation.

Gold nanoparticle decorated multi-walled carbon nanotubes as counter electrode for dye sensitized solar cells.

PubMed

Kaniyoor, Adarsh; Ramaprabhu, Sundara

2012-11-01

A novel counter electrode material for dye sensitized solar cells (DSSCs) composed of nanostructured Au particles decorated on functionalized multi-walled carbon nanotubes (f-MWNTs) is demonstrated for the first time. MWNTs synthesized by catalytic chemical vapor deposition technique are purified and functionalized by treating with concentrated acids. Au nanoparticles are decorated on f-MWNTs by a rapid and facile microwave assisted polyol reduction method. The materials are characterized by X-ray diffractometry, Fourier transform infra red spectroscopy and electron microscopy. The DSSC fabricated with Au/f-MWNTs based counter electrode shows enhanced power conversion efficiency (eta) of 4.9% under AM 1.5G simulated solar radiation. In comparison, the reference DSSCs fabricated with f-MWNTs and Pt counter electrodes show eta of 2.1% and 4.5%. This high performance of Au/f-MWNTs counter electrode is investigated using electrochemical impedance spectroscopy and cyclic voltammetry studies.

Spiral counter-current chromatography: Design, development, application, and challenges.

PubMed

Huang, Xin-Yi; Sun, Xiao-Ming; Pei, Dong; Di, Duo-Long

2017-01-01

Depending on the rapid growth in the radial gradient of the centrifugal force, spiral counter-current chromatography can greatly improve the retention of stationary phase, especially for the aqueous two-phase systems with ultra-polar and high viscosity that are not well retained in the conventional multilayer coils counter-current chromatography. As a result, it is an attractive and alternative technology that is suited for separation of hydrophilic compounds and has led to many exciting progress in recent years. This review presents the recent advances and applications of spiral counter-current chromatography, including its major benefits and limitations, some novel methods to improve the separation efficiency and its applications in separation of real samples. In addition, the remaining challenges and future perspectives on development of spiral counter-current chromatography also are proposed in this article. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Importance of counteranions on the hydration structure of the curium ion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atta Fynn, Raymond; Bylaska, Eric J.; De Jong, Wibe A.

2013-07-04

Using density functional theory based ab initio molecular dynamics and metadynamics we show that counter ions can trigger noticeable changes in the hydration shell structure of the curium ion. The free energies of curium-water coordination and the solvent hydrogen bond (HB) lifetimes in the absence and presence the counter anions predict that chloride and bromide counter anions strengthen the first shell and consequently the 8-fold coordination state is dominant by at least 98%. In contrast, the perchlorate counter anions are found to weaken the coordination shell and the HB network, with the 9-fold and 8-fold states existing in an 8:1more » ratio, which is in good agreement with reported 9:1 ratio seen in time resolved fluorescence spectroscopy experiments. To our knowledge this is the first time molecular simulations have shown that counter anions can directly affect the first hydration shell structure of a cation.« less

Validation of an automated mite counter for Dermanyssus gallinae in experimental laying hen cages.

PubMed

Mul, Monique F; van Riel, Johan W; Meerburg, Bastiaan G; Dicke, Marcel; George, David R; Groot Koerkamp, Peter W G

2015-08-01

For integrated pest management (IPM) programs to be maximally effective, monitoring of the growth and decline of the pest populations is essential. Here, we present the validation results of a new automated monitoring device for the poultry red mite (Dermanyssus gallinae), a serious pest in laying hen facilities world-wide. This monitoring device (called an "automated mite counter") was validated in experimental laying hen cages with live birds and a growing population of D. gallinae. This validation study resulted in 17 data points of 'number of mites counted' by the automated mite counter and the 'number of mites present' in the experimental laying hen cages. The study demonstrated that the automated mite counter was able to track the D. gallinae population effectively. A wider evaluation showed that this automated mite counter can become a useful tool in IPM of D. gallinae in laying hen facilities.

X-ray astronomy instrumentation studies. [design of a proportional counter and measurements of fluorescent radiation

NASA Technical Reports Server (NTRS)

Gregory, J. C.

1981-01-01

Preliminary designs were made for a multiplane, multiwire position sensitive proportional counter for X-ray use. Anode spacing was 2 mm and cathode spacing 1 mm. Assistance was provided in setting up and operating two multiwire proportional counters, one with 5 mm anode spacing, and the other with 2 mm spacing. Argon-based counter gases were used for preliminary work in assembling a working experimental system to measure xenon fluorescence yields. The design and specification of a high purity gas filling system capable of supplying mixtures of xenon and other gases to proportional counters was also performed. The system is mounted on a cart, is fully operational, and is flexible enough to be easily used as a pumping station for other clean applications. When needed, assistance was given to put into operation various computer-related pieces of equipment.

Digital controller for a Baum folding machine. [providing automatic counting and machine shutoff

NASA Technical Reports Server (NTRS)

Bryant, W. H. (Inventor)

1974-01-01

A digital controller for controlling the operation of a folding machine enables automatic folding of a desired number of sheets responsive to entry of that number into a selector. The controller includes three decade counter stages for corresponding rows of units, tens and hundreds push buttons. Each stage including a decimal-to-BCD encoder, a buffer register, and a digital or binary counter. The BCD representation of the selected count for each digit is loaded into the respective decade down counters. Pulses generated by a sensor and associated circuitry are used to decrease the count in the decade counters. When the content of the decade counter reaches either 0 or 1, a solenoid control valve is actuated which interrupts operation of the machine. A repeat switch, when actuated, prevents clearing of the buffer registers so that multiple groups of the same number of sheets can be folded without reentering the number into the selector.

Method and structure for passivating semiconductor material

DOEpatents

Pankove, Jacques I.

1981-01-01

A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

Semiconductor wire array structures, and solar cells and photodetectors based on such structures

DOEpatents

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Macroporous Semiconductors

PubMed Central

Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen

2010-01-01

Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

Room-temperature ductile inorganic semiconductor.

PubMed

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag 2 S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Narrow band gap amorphous silicon semiconductors

DOEpatents

Madan, A.; Mahan, A.H.

1985-01-10

Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

Buried Porous Silicon-Germanium Layers in Monocrystalline Silicon Lattices

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor); George, Thomas (Inventor); Jones, Eric W. (Inventor)

1998-01-01

Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition is discussed and monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than that of its monocrystalline semiconductor superlattice are discussed. Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si-Ge layers followed by patterning into mesa structures. The mesa structures are strain etched resulting in porosification of the Si-Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si-Ge layers produced in a similar manner emitted visible light at room temperature.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang; , Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2013-03-12

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G [Champaign, IL; Rogers, John A [Champaign, IL; Menard, Etienne [Durham, NC; Lee, Keon Jae [Tokyo, JP; Khang, Dahl-Young [Urbana, IL; Sun, Yugang [Westmont, IL; Meitl, Matthew [Raleigh, NC; Zhu, Zhengtao [Rapid City, SD; Ko, Heung Cho [Urbana, IL; Mack, Shawn [Goleta, CA

2011-10-18

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Printable semiconductor structures and related methods of making and assembling

DOEpatents

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao; Ko, Heung Cho; Mack, Shawn

2010-09-21

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Electron transfer dynamics and yield from gold nanoparticle to different semiconductors induced by plasmon band excitation

NASA Astrophysics Data System (ADS)

Du, L. C.; Xi, W. D.; Zhang, J. B.; Matsuzaki, H.; Furube, A.

2018-06-01

Photoinduced electron transfer from gold nanoparticles (NPs) to semiconductor under plasmon excitation is an important phenomenon in photocatalysis and solar cell applications. Femtosecond plasmon-induced electron transfer from gold NPs to the conduction band of different semiconductor like TiO2, SnO2, and ZnO was monitored at 3440 nm upon optical excitation of the surface plasmon band of gold NPs. It was found that electron injection was completed within 240 fs and the electron injection yield reached 10-30% under 570 nm excitation. It means TiO2 is not the only proper semiconductor as electron acceptors in such gold/semiconductor nanoparticle systems.

Thermovoltaic semiconductor device including a plasma filter

DOEpatents

Baldasaro, Paul F.

1999-01-01

A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

NASA Astrophysics Data System (ADS)

Siddique, M.; Jamil, M.; Rasheed, A.; Areeb, F.; Javed, Asif; Sumera, P.

2018-01-01

We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

Method for making a monolithic integrated high-T.sub.c superconductor-semiconductor structure

NASA Technical Reports Server (NTRS)

Burns, Michael J. (Inventor); de la Houssaye, Paul R. (Inventor); Russell, Stephen D. (Inventor); Garcia, Graham A. (Inventor); Barfknecht, Andrew T. (Inventor); Clayton, Stanley R. (Inventor)

2000-01-01

A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

Room-temperature ductile inorganic semiconductor

NASA Astrophysics Data System (ADS)

Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

2018-05-01

Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

Swarm Counter-Asymmetric-Threat (CAT) 6-DOF Dynamics Simulation

DTIC Science & Technology

2005-07-01

NAWCWD TP 8593 Swarm Counter-Asymmetric-Threat ( CAT ) 6-DOF Dynamics Simulation by James Bobinchak Weapons and Energetics...mathematical models used in the swarm counter- asymmetric-threat ( CAT ) simulation and the results of extensive Monte Carlo simulations. The swarm CAT ...Asymmetric-Threat ( CAT ) 6-DOF Dynamics Simulation (U) 6. AUTHOR(S) James Bobinchak and Gary Hewer 7. PERFORMING ORGANIZATION NAME(S) AND

3 CFR - Delegation of Certain Functions and Authorities Under the Iran Freedom and Counter-Proliferation...

Code of Federal Regulations, 2014 CFR

2014-01-01

... 3 The President 1 2014-01-01 2014-01-01 false Delegation of Certain Functions and Authorities Under the Iran Freedom and Counter-Proliferation Act of 2012 Presidential Documents Other Presidential Documents Memorandum of June 3, 2013 Delegation of Certain Functions and Authorities Under the Iran Freedom and Counter-Proliferation Act of 2012...

21 CFR 310.534 - Drug products containing active ingredients offered over-the-counter (OTC) for human use as oral...

Code of Federal Regulations, 2014 CFR

2014-04-01

... offered over-the-counter (OTC) for human use as oral wound healing agents. 310.534 Section 310.534 Food... active ingredients offered over-the-counter (OTC) for human use as oral wound healing agents. (a... aqueous solution have been present in oral mucosal injury drug products for use as oral wound healing...

21 CFR 310.534 - Drug products containing active ingredients offered over-the-counter (OTC) for human use as oral...

Code of Federal Regulations, 2012 CFR

2012-04-01

... offered over-the-counter (OTC) for human use as oral wound healing agents. 310.534 Section 310.534 Food... active ingredients offered over-the-counter (OTC) for human use as oral wound healing agents. (a... aqueous solution have been present in oral mucosal injury drug products for use as oral wound healing...

21 CFR 310.534 - Drug products containing active ingredients offered over-the-counter (OTC) for human use as oral...

Code of Federal Regulations, 2013 CFR

2013-04-01

... offered over-the-counter (OTC) for human use as oral wound healing agents. 310.534 Section 310.534 Food... active ingredients offered over-the-counter (OTC) for human use as oral wound healing agents. (a... aqueous solution have been present in oral mucosal injury drug products for use as oral wound healing...

21 CFR 310.547 - Drug products containing quinine offered over-the-counter (OTC) for the treatment and/or...

Code of Federal Regulations, 2014 CFR

2014-04-01

...-counter (OTC) for the treatment and/or prevention of malaria. 310.547 Section 310.547 Food and Drugs FOOD... over-the-counter (OTC) for the treatment and/or prevention of malaria. (a) Quinine and quinine salts have been used OTC for the treatment and/or prevention of malaria, a serious and potentially life...

21 CFR 310.547 - Drug products containing quinine offered over-the-counter (OTC) for the treatment and/or...

Code of Federal Regulations, 2013 CFR

2013-04-01

...-counter (OTC) for the treatment and/or prevention of malaria. 310.547 Section 310.547 Food and Drugs FOOD... over-the-counter (OTC) for the treatment and/or prevention of malaria. (a) Quinine and quinine salts have been used OTC for the treatment and/or prevention of malaria, a serious and potentially life...

21 CFR 310.547 - Drug products containing quinine offered over-the-counter (OTC) for the treatment and/or...

Code of Federal Regulations, 2012 CFR

2012-04-01

...-counter (OTC) for the treatment and/or prevention of malaria. 310.547 Section 310.547 Food and Drugs FOOD... over-the-counter (OTC) for the treatment and/or prevention of malaria. (a) Quinine and quinine salts have been used OTC for the treatment and/or prevention of malaria, a serious and potentially life...

21 CFR 310.547 - Drug products containing quinine offered over-the-counter (OTC) for the treatment and/or...

Code of Federal Regulations, 2011 CFR

2011-04-01

...-counter (OTC) for the treatment and/or prevention of malaria. 310.547 Section 310.547 Food and Drugs FOOD... over-the-counter (OTC) for the treatment and/or prevention of malaria. (a) Quinine and quinine salts have been used OTC for the treatment and/or prevention of malaria, a serious and potentially life...

21 CFR 310.547 - Drug products containing quinine offered over-the-counter (OTC) for the treatment and/or...

Code of Federal Regulations, 2010 CFR

2010-04-01

...-counter (OTC) for the treatment and/or prevention of malaria. 310.547 Section 310.547 Food and Drugs FOOD... over-the-counter (OTC) for the treatment and/or prevention of malaria. (a) Quinine and quinine salts have been used OTC for the treatment and/or prevention of malaria, a serious and potentially life...

Special-geometry proportional counters and techniques for detection of low-levels of X-rays and beta-particles

NASA Technical Reports Server (NTRS)

Gregory, J. C.

1976-01-01

The use and sensitivity of the multiwire proportional counter to detect Kr-85 in ambient air are examined. Data also cover monitoring beta and X-ray emitting radio nuclides at low activity levels. Results show the counter to have excellent properties for monitoring Kr-85 down to 0.0004 pCi cu/cm.

21 CFR 310.534 - Drug products containing active ingredients offered over-the-counter (OTC) for human use as oral...

Code of Federal Regulations, 2011 CFR

2011-04-01

... offered over-the-counter (OTC) for human use as oral wound healing agents. 310.534 Section 310.534 Food... active ingredients offered over-the-counter (OTC) for human use as oral wound healing agents. (a... aqueous solution have been present in oral mucosal injury drug products for use as oral wound healing...

Getting in Taped, Part I and Part II

ERIC Educational Resources Information Center

Cundy, H. M.; Higgins, J.

1971-01-01

This article is in two parts: discussion of mathematical concepts involved in converting the reading from the tape-recorder counter which counts the turns of the run-off spool to that from the counter which counts turns of the take-up spool; calculating the length of tape run off when given the reading from the tape-recorder counter of the run-off…

21 CFR 310.534 - Drug products containing active ingredients offered over-the-counter (OTC) for human use as oral...

Code of Federal Regulations, 2010 CFR

2010-04-01

... offered over-the-counter (OTC) for human use as oral wound healing agents. 310.534 Section 310.534 Food... active ingredients offered over-the-counter (OTC) for human use as oral wound healing agents. (a... aqueous solution have been present in oral mucosal injury drug products for use as oral wound healing...

Synchronization in counter-rotating oscillators.

PubMed

Bhowmick, Sourav K; Ghosh, Dibakar; Dana, Syamal K

2011-09-01

An oscillatory system can have opposite senses of rotation, clockwise or anticlockwise. We present a general mathematical description of how to obtain counter-rotating oscillators from the definition of a dynamical system. A type of mixed synchronization emerges in counter-rotating oscillators under diffusive scalar coupling when complete synchronization and antisynchronization coexist in different state variables. We present numerical examples of limit cycle van der Pol oscillator and chaotic Rössler and Lorenz systems. Stability conditions of mixed synchronization are analytically obtained for both Rössler and Lorenz systems. Experimental evidences of counter-rotating limit cycle and chaotic oscillators and mixed synchronization are given in electronic circuits.

Cosmic ray isotope measurements with a new Cerenkov X total energy telescope

NASA Technical Reports Server (NTRS)

Webber, W. R.; Kish, J. C.; Schrier, D. A.

1985-01-01

Measurements of the isotopic composition of cosmic nuclei with Z = 7-20 are reported. These measurements were made with a new version of a Cerenkov x total E telescope. Path length and uniformity corrections are made to all counters to a RMS level 1%. Since the Cerenkov counter is crucial to mass measurements using the C x E technique - special care was taken to optimize the resolution of the 2.4 cm thick Pilot 425 Cerenkov counter. This counter exhibited a beta = 1 muon equivalent LED resolution of 24%, corresponding to a total of 90 p.e. collected at the 1st dynodes of the photomultiplier tubes.

GEIGER-MULLER TYPE COUNTER TUBE

DOEpatents

Fowler, I.L.; Watt, L.A.K.

1959-12-15

A single counter tube capable of responding to a wide range of intensities is described. The counter tube comprises a tubular cathode and an anode extending centrally of the cathode. The spacing between the outer surface of the anode and the inner surface of the cathode is varied along the length of the tube to provide different counting volumes in adjacent portions of the tube. A large counting volume in one portion adjacent to a low-energy absorption window gives adequate sensitivity for measuring lowintensity radiation, while a smaller volume with close electrode spacing is provided in the counter to make possible measurement of intense garnma radiation fields.

Hardware support for collecting performance counters directly to memory

DOEpatents

Gara, Alan; Salapura, Valentina; Wisniewski, Robert W.

2012-09-25

Hardware support for collecting performance counters directly to memory, in one aspect, may include a plurality of performance counters operable to collect one or more counts of one or more selected activities. A first storage element may be operable to store an address of a memory location. A second storage element may be operable to store a value indicating whether the hardware should begin copying. A state machine may be operable to detect the value in the second storage element and trigger hardware copying of data in selected one or more of the plurality of performance counters to the memory location whose address is stored in the first storage element.

An organization of a digital subsystem for generating spacecraft timing and control signals

NASA Technical Reports Server (NTRS)

Perlman, M.

1972-01-01

A modulo-M counter (of clock pulses) is decomposed into parallel modulo-m sub i counters, where each m sub i is a prime power divisor of M. The modulo-p sub i counters are feedback shift registers which cycle through p sub i distinct states. By this organization, every possible nontrivial data frame subperiod and delayed subperiod may be derived. The number of clock pulses required to bring every modulo-p sub i counter to a respective designated state or count is determined by the Chinese remainder theorem. This corresponds to the solution of simultaneous congruences over relatively prime moduli.

Strategies for an effective youth counter-marketing program: recommendations from commercial marketing experts.

PubMed

McKenna, J; Gutierrez, K; McCall, K

2000-05-01

Intensive and sustained efforts to "counter-market" tobacco among teenagers are necessary to negate the "friendly familiarity" created by tobacco advertising and to communicate the true health and social costs of tobacco use. Counter-marketing campaigns should: highlight a tobacco-free lifestyle as the majority lifestyle of diverse and interesting individuals; explain the dangers of tobacco in a personal, emotional way; offer youth empowerment and control; use multiple voices, strategies, and executions; offer constructive alternatives to tobacco use; and portray smoking as unacceptable and undesirable for everyone. Counter-marketing activities should work in concert with other interventions to alter social norms regarding tobacco.

Application of a non-hazardous vital dye for cell counting with automated cell counters.

PubMed

Kim, Soo In; Kim, Hyun Jeong; Lee, Ho-Jae; Lee, Kiwon; Hong, Dongpyo; Lim, Hyunchang; Cho, Keunchang; Jung, Neoncheol; Yi, Yong Weon

2016-01-01

Recent advances in automated cell counters enable us to count cells more easily with consistency. However, the wide use of the traditional vital dye trypan blue (TB) raises environmental and health concerns due to its potential teratogenic effects. To avoid this chemical hazard, it is of importance to introduce an alternative non-hazardous vital dye that is compatible with automated cell counters. Erythrosin B (EB) is a vital dye that is impermeable to biological membranes and is used as a food additive. Similarly to TB, EB stains only nonviable cells with disintegrated membranes. However, EB is less popular than TB and is seldom used with automated cell counters. We found that cell counting accuracy with EB was comparable to that with TB. EB was found to be an effective dye for accurate counting of cells with different viabilities across three different automated cell counters. In contrast to TB, EB was less toxic to cultured HL-60 cells during the cell counting process. These results indicate that replacing TB with EB for use with automated cell counters will significantly reduce the hazardous risk while producing comparable results. Copyright © 2015 Logos Biosystems, Inc. Published by Elsevier Inc. All rights reserved.

Timecourse of mirror and counter-mirror effects measured with transcranial magnetic stimulation.

PubMed

Cavallo, Andrea; Heyes, Cecilia; Becchio, Cristina; Bird, Geoffrey; Catmur, Caroline

2014-08-01

The human mirror system has been the subject of much research over the past two decades, but little is known about the timecourse of mirror responses. In addition, it is unclear whether mirror and counter-mirror effects follow the same timecourse. We used single-pulse transcranial magnetic stimulation to investigate the timecourse of mirror and counter-mirror responses in the human brain. Experiment 1 demonstrated that mirror responses can be measured from around 200 ms after observed action onset. Experiment 2 demonstrated significant effects of counter-mirror sensorimotor training at all timepoints at which a mirror response was found in Experiment 1 (i.e. from 200 ms onward), indicating that mirror and counter-mirror responses follow the same timecourse. By suggesting similarly direct routes for mirror and counter-mirror responses, these results support the associative account of mirror neuron origins whereby mirror responses arise as a result of correlated sensorimotor experience during development. More generally, they contribute to theorizing regarding mirror neuron function by providing some constraints on how quickly mirror responses can influence social cognition. © The Author (2013). Published by Oxford University Press. For Permissions, please email: journals.permissions@oup.com.

Expertise in unexpected places: Children's acceptance of information from gender counter-stereotypical experts.

PubMed

Boseovski, Janet J; Hughes, Chelsea; Miller, Stephanie E

2016-01-01

The current study examined children's willingness to accept novel information from expert informants with nontraditional gender role interests. Four- to 8-year-olds heard conflicting information about traditionally feminine or masculine domains from a gender counter-stereotypical expert (e.g., a boy with expertise in ballet) and a layperson of the other gender (e.g., a girl with little knowledge about ballet). Participants were asked which informant was correct, who they would prefer to learn from in the future, and to rate their liking of each informant. Overall, participants selected the gender counter-stereotypical expert as correct. Four- to 5-year-olds reported a preference to learn from same-gender participants in the future irrespective of expertise, whereas 6- to 8-year-olds reported wanting to learn from counter-stereotypical experts. Boys showed relatively greater acceptance of information from a male counter-stereotypical expert than from a female counter-stereotypical expert. Although participants reported greater liking of same-gender informants, liking evaluations were largely positive irrespective of gender norm deviations. Implications for children's acceptance of gender nonconforming activities are discussed. Copyright © 2015 Elsevier Inc. All rights reserved.

DIFFICULTY IN THE FORMATION OF COUNTER-ORBITING HOT JUPITERS FROM NEAR-COPLANAR HIERARCHICAL TRIPLE SYSTEMS: A SUB-STELLAR PERTURBER

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Yuxin; Suto, Yasushi, E-mail: yuxin@utap.phys.s.u-tokyo.ac.jp

2016-03-20

Among 100 transiting planets with a measured projected spin–orbit angle λ, several systems are suggested to be counter-orbiting. While these cases may be due to the projection effect, the mechanism that produces a counter-orbiting planet has not been established. A promising scenario for counter-orbiting planets is the extreme eccentricity evolution in near-coplanar hierarchical triple systems with eccentric inner and outer orbits. We examine this scenario in detail by performing a series of systematic numerical simulations, and consider the possibility of forming hot Jupiters (HJs), especially a counter-orbiting one under this mechanism with a distant sub-stellar perturber. We incorporate quadrupole andmore » octupole secular gravitational interaction between the two orbits, and also short-range forces (correction for general relativity, star and inner planetary tide, and rotational distortion) simultaneously. We find that most systems are tidally disrupted and that a small fraction of the surviving planets turn out to be prograde. The formation of counter-orbiting HJs in this scenario is possible only in a very restricted parameter region, and thus is very unlikely in practice.« less

Strengthening of the Coordination Shell by Counter Ions in Aqueous Th 4+ Solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atta-Fynn, Raymond; Bylaska, Eric J.; de Jong, Wibe A.

The presence of counter ions in solutions containing highly charged metal cations can trigger processes such as ion-pair formation, hydrogen bond breakages and subsequent reformation, and ligand exchanges. In this work, it is shown how halide (Cl-, Br-) and perchlorate (ClO4-) anions affect the strength of the primary solvent coordination shells around Th4+ using explicit solvent and finite temperature ab initio molecular dynamics modeling methods. The 9-fold solvent geometry was found to be the most stable hydration structure in each aqueous solution. Relative to the dilute aqueous solution, the presence of the counter ions did not significantly alter the geometrymore » of the primary hydration shell. However, the free energy analyses indicated that the 10-fold hydrated states were thermodynamically accessible in dilute and bromide aqueous solutions within 1 kcal/mol. Analysis of the results showed that the hydrogen bond lifetimes were longer and solvent exchange energy barriers were larger in solutions with counter ions in comparison with the solution with no counter ions. This implies that the presence of the counter ions induces a strengthening of the Th4+ hydration shell.« less

New developments in power semiconductors

NASA Technical Reports Server (NTRS)

Sundberg, G. R.

1983-01-01

This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

Method and system for powering and cooling semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telford, Steven J; Ladran, Anthony S

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Organic Spin-Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering.

PubMed

Jang, Hyuk-Jae; Richter, Curt A

2017-01-01

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.