Imaging detectors and electronics—a view of the future

NASA Astrophysics Data System (ADS)

Spieler, Helmuth

2004-09-01

Imaging sensors and readout electronics have made tremendous strides in the past two decades. The application of modern semiconductor fabrication techniques and the introduction of customized monolithic integrated circuits have made large-scale imaging systems routine in high-energy physics. This technology is now finding its way into other areas, such as space missions, synchrotron light sources, and medical imaging. I review current developments and discuss the promise and limits of new technologies. Several detector systems are described as examples of future trends. The discussion emphasizes semiconductor detector systems, but I also include recent developments for large-scale superconducting detector arrays.

Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

NASA Technical Reports Server (NTRS)

Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

1996-01-01

Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

Conceptual design of a hybrid Ge:Ga detector array

NASA Technical Reports Server (NTRS)

Parry, C. M.

1984-01-01

For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

NASA Technical Reports Server (NTRS)

Wagner, L. J.

1977-01-01

The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

ERIC Educational Resources Information Center

Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

2008-01-01

An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

Mid-Infrared Tunable Resonant Cavity Enhanced Detectors

PubMed Central

Quack, Niels; Blunier, Stefan; Dual, Jurg; Felder, Ferdinand; Arnold, Martin; Zogg, Hans

2008-01-01

Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED) principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the cavity length thus shifting the resonances where the detector is sensitive. Using electrostatically actuated MEMS micromirrors, a very compact tunable detector system has been fabricated. Mirror movements of more than 3 μm at 30V are obtained. With these mirrors, detectors with a wavelength tuning range of about 0.7 μm have been realized. Single detectors can be used in mid-infrared micro spectrometers, while a detector arrangement in an array makes it possible to realize Adaptive Focal Plane Arrays (AFPA). PMID:27873824

Development of a RadFET Linear Array for Intracavitary in vivo Dosimetry During External Beam Radiotherapy and Brachytherapy

NASA Astrophysics Data System (ADS)

Price, R. A.; Benson, C.; Joyce, M. J.; Rodgers, K.

2004-08-01

We present the details of a new linear array dosimeter consisting of a chain of semiconductors mounted on an ultra-thin (50 /spl mu/m thick) flexible substrate and housed in an intracavitary catheter. The semiconductors, manufactured by NMRC Cork, have not been packaging and incorporate a passivation layer that allows them to be mounted on the substrate using flip-chip-bonding. This paper reports, for the first time, the construction of a multiple (ten) detector array suited to in vivo dosimetry in the rectum, esophagus and vagina during external beam radiotherapy, as well as being adaptable to in vivo dosimetry during brachytherapy and diagnostic radiology.

Pixel detectors for use in retina neurophysiology studies

NASA Astrophysics Data System (ADS)

Cunningham, W.; Mathieson, K.; Horn, M.; Melone, J.; McEwan, F. A.; Blue, A.; O'Shea, V.; Smith, K. M.; Litke, A.; Chichilnisky, E. J.; Rahman, M.

2003-08-01

One area of major inter-disciplinary co-operation is between the particle physics and bio-medical communities. The type of large detector arrays and fast electronics developed in laboratories like CERN are becoming used for a wide range of medical and biological experiments. In the present work fabrication technology developed for producing semiconductor radiation detectors has been applied to produce arrays which have been used in neuro-physiological experiments on retinal tissue. We have exploited UVIII, a low molecular weight resist, that has permitted large area electron beam lithography. This allows the resolution to go below that of conventional photolithography and hence the production of densely packed ˜500 electrode arrays with feature sizes down to below 2 μm. The neural signals from significant areas of the retina may thus be captured.

Recent development of radiation measurement instrument for industrial and medical applications

NASA Astrophysics Data System (ADS)

Baba, Sueki; Ohmori, Koichi; Mito, Yoshio; Tanoue, Toshiya; Yano, Shigeki; Tokumori, Kenji; Toyofuku, Fukai; Kanda, Shigenobu

2001-02-01

Recently, computer imaging technology has developed very high-quality image and fast processing time. X-rays have been used for many purposes such as medical diagnosis and analyzing the structure of industrial materials. However, as X-rays are hazardous to the human body, it is desirable to reduce its exposed dose to a minimum. For this purpose, it is necessary to use a semiconductor radiation detector with a high efficiency for X-rays. We have developed photon-counting CdTe array detector system for medical and industrial use. The bone densitometer for Dual Energy X-ray Absorptometry (DEXA) has been developed to make diagnosis of osteoporosis, and it is developed to analyze a material element for industrial use. Recently, we have developed a monochromatic X-ray CT using a 256 ch CdTe array detector. We found that the array detector systems are very useful for medical and industrial applications.

Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System

PubMed Central

Yang, Jong-Ryul; Lee, Woo-Jae; Han, Seong-Tae

2016-01-01

A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s. PMID:26950128

Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System.

PubMed

Yang, Jong-Ryul; Lee, Woo-Jae; Han, Seong-Tae

2016-03-02

A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s.

INAS hole-immobilized doping superlattice long-wave-infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1992-01-01

An approach to long-wave-infrared (LWIR) technology is discussed. The approach is based on molecular beam epitaxy (MBE) growth of hole immobilized doping superlattices in narrow band gap 3-5 semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures suitable for focal plane arrays. An LWIR detector that has high detectivity performance to wavelengths of about 16 microns at operating temperatures of 65K, where long-duration space refrigeration is plausible, is presented.

Comparison of experimental results of a Quad-CZT array detector, a NaI(Tl), a LaBr3(Ce), and a HPGe for safeguards applications

NASA Astrophysics Data System (ADS)

Kwak, S.-W.; Choi, J.; Park, S. S.; Ahn, S. H.; Park, J. S.; Chung, H.

2017-11-01

A compound semiconductor detector, CdTe (or CdZnTe), has been used in various areas including nuclear safeguards applications. To address its critical drawback, low detection efficiency, which leads to a long measurement time, a Quad-CZT array-based gamma-ray spectrometer in our previous study has been developed by combining four individual CZT detectors. We have re-designed the developed Quad-CZT array system to make it more simple and compact for a hand-held gamma-ray detector. The objective of this paper aims to compare the improved Quad-CZT array system with the traditional gamma-ray spectrometers (NaI(Tl), LaBr3(Ce), HPGe); these detectors currently have been the most commonly used for verification of nuclear materials. Nuclear materials in different physical forms in a nuclear facility of Korea were measured by the Quad-CZT array system and the existing gamma-ray detectors. For measurements of UO2 pellets and powders, and fresh fuel rods, the Quad-CZT array system turned out to be superior to the NaI(Tl) and LaBr3(Ce). For measurements of UF6 cylinders with a thick wall, the Quad-CZT array system and HPGe gave similar accuracy under the same measurement time. From the results of the field tests conducted, we can conclude that the improved Quad-CZT array system would be used as an alternative to HPGes and scintillation detectors for the purpose of increasing effectivenss and efficiency of safeguards applications. This is the first paper employing a multi-element CZT array detector for measurement of nuclear materials—particularly uranium in a UF6 cylinder—in a real nuclear facility. The present work also suggests that the multi-CZT array system described in this study would be one promising method to address a serious weakness of CZT-based radiation detection.

Neutron Spectroscopy Using LiF Thin-Film Detectors

DTIC Science & Technology

2013-03-01

Michael A. Ford, BS Second Lieutenant, USAF Approved: LTC Stephen R. McHale (Chairman) Date John W. McClory, PhD (Member) Date Justin A. Clinton, PhD...Member) Date AFIT-ENP-13-M-10 Abstract A stacked array of segmented micro-structured semiconductor neutron detectors (MSNDs) has been fabricated to...conveniently available from radioisotopes , reactions involving incident protons, deuterons, and so on must rely on artificially accelerated particles [12

Defense Industrial Base Assessment: U.S. Imaging and Sensors Industry

DTIC Science & Technology

2006-10-01

uncooled devices, but provide much higher resolution. The semiconductor material used in the detector is typically mercury cadmium telluride (HgCdTe...The material principally used in the arrays was mercury cadmium telluride (HgCdTe). Generation 2 detectors significantly improved the signal-to...Silicide (PtSi), Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AlGaAs), Mercury Cadmium Telluride (HgCdTe), Indium Gallium Arsenide (InGaAs

Using confidence intervals to evaluate the focus alignment of spectrograph detector arrays.

PubMed

Sawyer, Travis W; Hawkins, Kyle S; Damento, Michael

2017-06-20

High-resolution spectrographs extract detailed spectral information of a sample and are frequently used in astronomy, laser-induced breakdown spectroscopy, and Raman spectroscopy. These instruments employ dispersive elements such as prisms and diffraction gratings to spatially separate different wavelengths of light, which are then detected by a charge-coupled device (CCD) or complementary metal-oxide-semiconductor (CMOS) detector array. Precise alignment along the optical axis (focus position) of the detector array is critical to maximize the instrumental resolution; however, traditional approaches of scanning the detector through focus lack a quantitative measure of precision, limiting the repeatability and relying on one's experience. Here we propose a method to evaluate the focus alignment of spectrograph detector arrays by establishing confidence intervals to measure the alignment precision. We show that propagation of uncertainty can be used to estimate the variance in an alignment, thus providing a quantitative and repeatable means to evaluate the precision and confidence of an alignment. We test the approach by aligning the detector array of a prototype miniature echelle spectrograph. The results indicate that the procedure effectively quantifies alignment precision, enabling one to objectively determine when an alignment has reached an acceptable level. This quantitative approach also provides a foundation for further optimization, including automated alignment. Furthermore, the procedure introduced here can be extended to other alignment techniques that rely on numerically fitting data to a model, providing a general framework for evaluating the precision of alignment methods.

Compact Micromachined Infrared Bandpass Filters for Planetary Spectroscopy

NASA Technical Reports Server (NTRS)

Merrell, Willie C., II; Aslam, Shahid; Brown, Ari D.; Chervenak, James A.; Huang, Wei-Chung; Quijada, Manuel; Wollack, Edward

2011-01-01

The future needs of space based observational planetary and astronomy missions include low mass and small volume radiometric instruments that can operate in high radiation and low temperature environments. Here we focus on a central spectroscopic component, the bandpass filter. We model the bandpass response of the filters to target the wavelength of the resonance peaks at 20, 40, and 60 micrometers and report good agreement between the modeled and measured response. We present a technique of using common micromachining processes for semiconductor fabrication to make compact, free standing resonant metal mesh filter arrays with silicon support frames. The process can accommodate multiple detector array architectures and the silicon frame provides lightweight mechanical support with low form factor. We also present a conceptual hybridization of the filters with a detector array.

High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

NASA Astrophysics Data System (ADS)

Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

2016-01-01

State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

PubMed

Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

2006-01-01

Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

Multicapillary Gas Chromatography-Temperature Modulated Metal Oxide Semiconductor Sensors Array Detector for Monitoring of Volatile Organic Compounds in Closed Atmosphere Using Gaussian Apodization Factor Analysis.

PubMed

Alinoori, Amir Hossein; Masoum, Saeed

2018-05-22

A unique metal oxide semiconductor sensor (MOS) array detector with eight sensors was designed and fabricated in a PTFE chamber as an interface for coupling with multicapillary gas chromatography. This design consists of eight transfer lines with equal length between the multicapillary columns (MCC) and sensors. The deactivated capillary columns were passed through each transfer line and homemade flow splitter to distribute the same gas flow on each sensor. Using the eight ports flow splitter design helps us to equal the length of carrier gas path and flow for each sensor, minimizing the dead volume of the sensor's chamber and increasing chromatographic resolution. In addition to coupling of MCC to MOS array detector and other considerations in hardware design, modulation of MOS temperature was used to increase sensitivity and selectivity, and data analysis was enhanced with adapted Gaussian apodization factor analysis (GAFA) as a multivariate curve resolution algorithm. Continues air sampling and injecting system (CASI) design provides a fast and easily applied method for continues injection of air sample with no additional sample preparation. The analysis cycle time required for each run is less than 300 s. The high sample load and sharp injection with the fast separation by MCC decrease the peak widths and improve detection limits. This homemade customized instrument is an alternative to other time-consuming and expensive technologies for continuous monitoring of outgassing in air samples.

Future Development Trajectories for Imaging X-rays Spectrometers Based on Microcalorimeters

NASA Technical Reports Server (NTRS)

Kilbourne, Caroline A.; Bandler, Simon R.

2013-01-01

Future development trajectories for imaging x-ray spectrometers based on microcalorimeters. Since their invention 30 years ago, the capability of X-ray microcalorimeters has increased steadily, with continual improvements in energy resolution, speed, and array size. Arrays of up to 1024 pixels have been produced, and resolution better than 1 eV at 1.5 keV has been achieved. These detectors can be optimized for the highest priority science, such as designing for the highest resolving power at low energies at the expense of dynamic range, or the greatest focal-plane coverage at the expense of speed. Three types of X-ray microcalorimeters presently dominate the field, each characterized by the thermometer technology. The first two types use temperature-sensitive resistors: semiconductors in the metal-insulator transition and superconductors operated in the superconducting-normal transition. The third type uses a magnetically coupled thermometer, and is at an earlier stage of development than the other two. The Soft X-ray Spectrometer (SXS) on Astro-H, expected to launch in 2015, will use an array of silicon thermistors with HgTe X-ray absorbers that will operate at 50 mK. Both the semiconductor and superconductor calorimeters have been implemented in small arrays. Kilopixel arrays of the superconducting calorimeters are being produced, and much larger arrays may require the non-dissipative advantage of magnetically coupled thermometers. I will project the development trajectories of these detectors and their read-out technologies and assess what their capabilities and limitations will be 10 - 20 years from now.

High resolution energy-sensitive digital X-ray

DOEpatents

Nygren, D.R.

1995-07-18

An apparatus and method for detecting an x-ray and for determining the depth of penetration of an x-ray into a semiconductor strip detector. In one embodiment, a semiconductor strip detector formed of semiconductor material is disposed in an edge-on orientation towards an x-ray source such that x-rays from the x-ray source are incident upon and substantially perpendicular to the front edge of the semiconductor strip detector. The semiconductor strip detector is formed of a plurality of segments. The segments are coupled together in a collinear arrangement such that the semiconductor strip detector has a length great enough such that substantially all of the x-rays incident on the front edge of the semiconductor strip detector interact with the semiconductor material which forms the semiconductor strip detector. A plurality of electrodes are connected to the semiconductor strip detector such that each one of the semiconductor strip detector segments has at least one of the of electrodes coupled thereto. A signal processor is also coupled to each one of the electrodes. The present detector detects an interaction within the semiconductor strip detector, between an x-ray and the semiconductor material, and also indicates the depth of penetration of the x-ray into the semiconductor strip detector at the time of the interaction. 5 figs.

High resolution energy-sensitive digital X-ray

DOEpatents

Nygren, David R.

1995-01-01

An apparatus and method for detecting an x-ray and for determining the depth of penetration of an x-ray into a semiconductor strip detector. In one embodiment, a semiconductor strip detector formed of semiconductor material is disposed in an edge-on orientation towards an x-ray source such that x-rays From the x-ray source are incident upon and substantially perpendicular to the front edge of the semiconductor strip detector. The semiconductor strip detector is formed of a plurality of segments. The segments are coupled together in a collinear arrangement such that the semiconductor strip detector has a length great enough such that substantially all of the x-rays incident on the front edge of the semiconductor strip detector interact with the semiconductor material which forms the semiconductor strip detector. A plurality of electrodes are connected to the semiconductor strip detect or such that each one of the of semiconductor strip detector segments has at least one of the of electrodes coupled thereto. A signal processor is also coupled to each one of the electrodes. The present detector detects an interaction within the semiconductor strip detector, between an x-ray and the semiconductor material, and also indicates the depth of penetration of the x-ray into the semiconductor strip detector at the time of the interaction.

Performance measurements of hybrid PIN diode arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jernigan, J.G.; Arens, J.F.; Kramer, G.

We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 {times} 64 pixels, each 120 {mu}m square, and the other format having 256 {times} 256 pixels, each 30 {mu}m square. In both cases, the thickness of the PIN diode layer is 300 {mu}m. Measurementsmore » of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs.« less

A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics

NASA Astrophysics Data System (ADS)

Zhao, Qing-Yuan; McCaughan, Adam N.; Dane, Andrew E.; Berggren, Karl K.; Ortlepp, Thomas

2017-04-01

Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.

A sub-millimeter resolution PET detector module using a multi-pixel photon counter array

NASA Astrophysics Data System (ADS)

Song, Tae Yong; Wu, Heyu; Komarov, Sergey; Siegel, Stefan B.; Tai, Yuan-Chuan

2010-05-01

A PET block detector module using an array of sub-millimeter lutetium oxyorthosilicate (LSO) crystals read out by an array of surface-mount, semiconductor photosensors has been developed. The detector consists of a LSO array, a custom acrylic light guide, a 3 × 3 multi-pixel photon counter (MPPC) array (S10362-11-050P, Hamamatsu Photonics, Japan) and a readout board with a charge division resistor network. The LSO array consists of 100 crystals, each measuring 0.8 × 0.8 × 3 mm3 and arranged in 0.86 mm pitches. A Monte Carlo simulation was used to aid the design and fabrication of a custom light guide to control distribution of scintillation light over the surface of the MPPC array. The output signals of the nine MPPC are multiplexed by a charge division resistor network to generate four position-encoded analog outputs. Flood image, energy resolution and timing resolution measurements were performed using standard NIM electronics. The linearity of the detector response was investigated using gamma-ray sources of different energies. The 10 × 10 array of 0.8 mm LSO crystals was clearly resolved in the flood image. The average energy resolution and standard deviation were 20.0% full-width at half-maximum (FWHM) and ±5.0%, respectively, at 511 keV. The timing resolution of a single MPPC coupled to a LSO crystal was found to be 857 ps FWHM, and the value for the central region of detector module was 1182 ps FWHM when ±10% energy window was applied. The nonlinear response of a single MPPC when used to read out a single LSO was observed among the corner crystals of the proposed detector module. However, the central region of the detector module exhibits significantly less nonlinearity (6.5% for 511 keV). These results demonstrate that (1) a charge-sharing resistor network can effectively multiplex MPPC signals and reduce the number of output signals without significantly degrading the performance of a PET detector and (2) a custom light guide to permit light sharing among multiple MPPC and to diffuse and direct scintillation light can reduce the nonlinearity of the detector response within the limited dynamic range of a typical MPPC. As a result, the proposed PET detector module has the potential to be refined for use in high-resolution PET insert applications.

A sub-millimeter resolution PET detector module using a multi-pixel photon counter array.

PubMed

Song, Tae Yong; Wu, Heyu; Komarov, Sergey; Siegel, Stefan B; Tai, Yuan-Chuan

2010-05-07

A PET block detector module using an array of sub-millimeter lutetium oxyorthosilicate (LSO) crystals read out by an array of surface-mount, semiconductor photosensors has been developed. The detector consists of a LSO array, a custom acrylic light guide, a 3 x 3 multi-pixel photon counter (MPPC) array (S10362-11-050P, Hamamatsu Photonics, Japan) and a readout board with a charge division resistor network. The LSO array consists of 100 crystals, each measuring 0.8 x 0.8 x 3 mm(3) and arranged in 0.86 mm pitches. A Monte Carlo simulation was used to aid the design and fabrication of a custom light guide to control distribution of scintillation light over the surface of the MPPC array. The output signals of the nine MPPC are multiplexed by a charge division resistor network to generate four position-encoded analog outputs. Flood image, energy resolution and timing resolution measurements were performed using standard NIM electronics. The linearity of the detector response was investigated using gamma-ray sources of different energies. The 10 x 10 array of 0.8 mm LSO crystals was clearly resolved in the flood image. The average energy resolution and standard deviation were 20.0% full-width at half-maximum (FWHM) and +/-5.0%, respectively, at 511 keV. The timing resolution of a single MPPC coupled to a LSO crystal was found to be 857 ps FWHM, and the value for the central region of detector module was 1182 ps FWHM when +/-10% energy window was applied. The nonlinear response of a single MPPC when used to read out a single LSO was observed among the corner crystals of the proposed detector module. However, the central region of the detector module exhibits significantly less nonlinearity (6.5% for 511 keV). These results demonstrate that (1) a charge-sharing resistor network can effectively multiplex MPPC signals and reduce the number of output signals without significantly degrading the performance of a PET detector and (2) a custom light guide to permit light sharing among multiple MPPC and to diffuse and direct scintillation light can reduce the nonlinearity of the detector response within the limited dynamic range of a typical MPPC. As a result, the proposed PET detector module has the potential to be refined for use in high-resolution PET insert applications.

A sub-millimeter resolution PET detector module using a multi-pixel photon counter array

PubMed Central

Song, Tae Yong; Wu, Heyu; Komarov, Sergey; Siegel, Stefan B; Tai, Yuan-Chuan

2010-01-01

A PET block detector module using an array of sub-millimeter lutetium oxyorthosilicate (LSO) crystals read out by an array of surface-mount, semiconductor photosensors has been developed. The detector consists of a LSO array, a custom acrylic light guide, a 3 × 3 multi-pixel photon counter (MPPC) array (S10362-11-050P, Hamamatsu Photonics, Japan) and a readout board with a charge division resistor network. The LSO array consists of 100 crystals, each measuring 0.8 × 0.8 × 3 mm3 and arranged in 0.86 mm pitches. A Monte Carlo simulation was used to aid the design and fabrication of a custom light guide to control distribution of scintillation light over the surface of the MPPC array. The output signals of the nine MPPC are multiplexed by a charge division resistor network to generate four position-encoded analog outputs. Flood image, energy resolution and timing resolution measurements were performed using standard NIM electronics. The linearity of the detector response was investigated using gamma-ray sources of different energies. The 10 × 10 array of 0.8 mm LSO crystals was clearly resolved in the flood image. The average energy resolution and standard deviation were 20.0% full-width at half-maximum (FWHM) and ±5.0%, respectively, at 511 keV. The timing resolution of a single MPPC coupled to a LSO crystal was found to be 857 ps FWHM, and the value for the central region of detector module was 1182 ps FWHM when ±10% energy window was applied. The nonlinear response of a single MPPC when used to read out a single LSO was observed among the corner crystals of the proposed detector module. However, the central region of the detector module exhibits significantly less nonlinearity (6.5% for 511 keV). These results demonstrate that (1) a charge-sharing resistor network can effectively multiplex MPPC signals and reduce the number of output signals without significantly degrading the performance of a PET detector and (2) a custom light guide to permit light sharing among multiple MPPC and to diffuse and direct scintillation light can reduce the nonlinearity of the detector response within the limited dynamic range of a typical MPPC. As a result, the proposed PET detector module has the potential to be refined for use in high-resolution PET insert applications. PMID:20393236

Development of a unit cell for a Ge:Ga detector array

NASA Technical Reports Server (NTRS)

1988-01-01

Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.

Microwave amplification based on quasiparticle SIS up and down frequency converters

NASA Astrophysics Data System (ADS)

Kojima, T.; Uzawa, Y.; Shan, W.

2018-02-01

Heterodyne instruments have recently attained quantum-limited low-noise performance, particularly in radio astronomy, but it is difficult to develop large heterodyne arrays such as a modern radio camera using cryogenic sensitive detectors based on microwave kinetic inductance detectors, transition edge sensors, etc. In the realization of the heterodyne array, the reduction of power dissipation for semiconductor-based amplifiers remains a major challenge. Alternatively, superconducting parametric amplifiers still seem to have several barriers to application, especially in terms of operating temperature. Here, we show a novel concept of microwave amplification based on up and down frequency-conversion processes using quasiparticle superconductor-insulator-superconductor (SIS) tunnel junctions. We demonstrate positive gain using a proof-of-concept test module, which operates with a power dissipation of several μW at a bath temperature of 4 K. The performance of the module suggests great potential for application in large arrays.

Detector and readout performance goals for quantum well and strained layer superlattice focal plane arrays imaging under tactical and strategic backgrounds

NASA Astrophysics Data System (ADS)

Bandara, Sumith V.

2009-11-01

Advancements in III-V semiconductor based, Quantum-well infrared photodetector (QWIP) and Type-II Strained-Layer Superlattice detector (T2SLS) technologies have yielded highly uniform, large-format long-wavelength infrared (LWIR) QWIP FPAs and high quantum efficiency (QE), small format, LWIR T2SLS FPAs. In this article, we have analyzed the QWIP and T2SLS detector level performance requirements and readout integrated circuit (ROIC) noise levels for several staring array long-wavelength infrared (LWIR) imaging applications at various background levels. As a result of lower absorption QE and less than unity photoconductive gain, QWIP FPAs are appropriate for high background tactical applications. However, if the application restricts the integration time, QWIP FPA performance may be limited by the read noise of the ROIC. Rapid progress in T2SLS detector material has already demonstrated LWIR detectors with sufficient performance for tactical applications and potential for strategic applications. However, significant research is needed to suppress surface leakage currents in order to reproduce performances at pixel levels of T2SLS FPAs.

Tunable quantum well infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A novel infrared detector (20, 20', 20), is provided, which is characterized by photon-assisted resonant tunneling between adjacent quantum wells (22a, 22b) separated by barrier layers (28) in an intrinsic semiconductor layer (24) formed on an n.sup.+ substrate (26), wherein the resonance is electrically tunable over a wide band of wavelengths in the near to long infrared region. An n.sup.+ contacting layer (34) is formed over the intrinsic layer and the substrate is n.sup.+ doped to provide contact to the quantum wells. The detector permits fabrication of arrays (30) (one-dimensional and two-dimensional) for use in imaging and spectroscopy applications.

Integration of Si-CMOS embedded photo detector array and mixed signal processing system with embedded optical waveguide input

NASA Astrophysics Data System (ADS)

Kim, Daeik D.; Thomas, Mikkel A.; Brooke, Martin A.; Jokerst, Nan M.

2004-06-01

Arrays of embedded bipolar junction transistor (BJT) photo detectors (PD) and a parallel mixed-signal processing system were fabricated as a silicon complementary metal oxide semiconductor (Si-CMOS) circuit for the integration optical sensors on the surface of the chip. The circuit was fabricated with AMI 1.5um n-well CMOS process and the embedded PNP BJT PD has a pixel size of 8um by 8um. BJT PD was chosen to take advantage of its higher gain amplification of photo current than that of PiN type detectors since the target application is a low-speed and high-sensitivity sensor. The photo current generated by BJT PD is manipulated by mixed-signal processing system, which consists of parallel first order low-pass delta-sigma oversampling analog-to-digital converters (ADC). There are 8 parallel ADCs on the chip and a group of 8 BJT PDs are selected with CMOS switches. An array of PD is composed of three or six groups of PDs depending on the number of rows.

Semiconductor radiation detector with internal gain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

NASA Technical Reports Server (NTRS)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

Preliminary performances measured on a CMOS long linear array for space application

NASA Astrophysics Data System (ADS)

Renard, Christophe; Artinian, Armand; Dantes, Didier; Lepage, Gérald; Diels, Wim

2017-11-01

This paper presents the design and the preliminary performances of a CMOS linear array, resulting from collaboration between Alcatel Alenia Space and Cypress Semiconductor BVBA, which takes advantage of emerging potentialities of CMOS technologies. The design of the sensor is presented: it includes 8000 panchromatic pixels with up to 25 rows used in TDI mode, and 4 lines of 2000 pixels for multispectral imaging. Main system requirements and detector tradeoffs are recalled, and the preliminary test results obtained with a first generation prototype are summarized and compared with predicted performances.

Next decade in infrared detectors

NASA Astrophysics Data System (ADS)

Rogalski, A.

2017-10-01

Fundamental and technological issues associated with the development and exploitation of the most advanced infrared technologies is discussed. In these classes of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys, type II superlattices (T2SLs), barrier detectors, quantum wells, extrinsic detectors, and uncooled thermal bolometers. The sophisticated physics associated with the antimonide-based bandgap engineering will give a new impact and interest in development of infrared detector structures. Important advantage of T2SLs is the high quality, high uniformity and stable nature of the material. In general, III-V semiconductors are more robust than their II-VI counterparts due to stronger, less ionic chemical bonding. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability, scalability, producibility, and affordability - the so-called "ibility" advantages. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. The microbolometer detectors are now produced in larger volumes than all other IR array technologies together. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VOx) or amorphous silicon (a-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement.

Macroscopic Violation of Three Cauchy-Schwarz Inequalities Using Correlated Light Beams From an Infra-Red Emitting Semiconductor Diode Array

NASA Technical Reports Server (NTRS)

Edwards, P. J.; Huang, X.; Li, Y. Q. (Editor); Wang, Y. Z. (Editor)

1996-01-01

We briefly review quantum mechanical and semi-classical descriptions of experiments which demonstrate the macroscopic violation of the three Cauchy-Schwarz inequalities: g(sup 2)(sub 11)(0) greater than or equal to 1; g(sup 2)(sub 11)(0) greater than or equal to g(sup 2)(sub 11)(t), (t approaches infinity); (the absolute value of g(sup 2)(sub 11)(0))(exp 2) less than or equal to g(sup 2)(sub 11)(0) g(sup 2)(sub 11)(0). Our measurements demonstrate the violation, at macroscopic intensities, of each of these inequalities. We show that their violation, although weak, can be demonstrated through photodetector current covariance measurements on correlated sub-Poissonian Poissonian, and super Poissonian light beams. Such beams are readily generated by a tandem array of infrared-emitting semiconductor junction diodes. Our measurements utilize an electrically coupled array of one or more infrared-emitting diodes, optically coupled to a detector array. The emitting array is operated in such a way as to generate highly correlated beams of variable photon Fano Factor. Because the measurements are made on time scales long compared with the first order coherence time and with detector areas large compared with the corresponding coherence areas, first order interference effects are negligible. The first and second inequalities are violated, as expected, when a sub-Poissonian light beam is split and the intensity fluctuations of the two split beams are measured by two photodetectors and subsequently cross-correlated. The third inequality is violated by bunched (as well as anti-bunched) beams of equal intensity provided the measured cross correlation coefficient exceeds (F - 1)/F, where F is the measured Fano Factor of each beam. We also investigate the violation for the case of unequal beams.

Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays

NASA Astrophysics Data System (ADS)

Haston, Kyle; Barber, H. Bradford; Furenlid, Lars R.; Salçin, Esen; Bora, Vaibhav

2011-10-01

Pixellated semiconductor detectors, such as CdZnTe, CdTe, or TlBr, are used for gamma-ray imaging in medicine and astronomy. Data analysis for these detectors typically estimates the position (x, y, z) and energy (E) of each interacting gamma ray from a set of detector signals {Si} corresponding to completed charge transport on the hit pixel and any of its neighbors that take part in charge sharing, plus the cathode. However, it is clear from an analysis of signal induction, that there are transient signal on all pixel electrodes during the charge transport and, when there is charge trapping, small negative residual signals on all electrodes. If we wish to optimally obtain the event parameters, we should take all these signals into account. We wish to estimate x,y,z and E from the set of all electrode signals, {Si(t)}, including time dependence, using maximum-likelihood techniques[1]. To do this, we need to determine the probability of the electrode signals, given the event parameters {x, y, z, E}, i.e. Pr( {Si(t)} | {x, y, z, E} ). Thus we need to map the detector response of all pixels, {Si(t)}, for a large number of events with known x,y,z and E.In this paper we demonstrate the existence of the transient signals and residual signals and determine their magnitudes. They are typically 50-100 times smaller than the hit-pixel signals. We then describe development of an apparatus to measure the response of a 16-pixel semiconductor detector and show some preliminary results. We also discuss techniques for measuring the event parameters for individual gamma-ray interactions, a requirement for determining Pr( {Si(t)} | {x, y, z, E}).

Pixel detectors for x-ray imaging spectroscopy in space

NASA Astrophysics Data System (ADS)

Treis, J.; Andritschke, R.; Hartmann, R.; Herrmann, S.; Holl, P.; Lauf, T.; Lechner, P.; Lutz, G.; Meidinger, N.; Porro, M.; Richter, R. H.; Schopper, F.; Soltau, H.; Strüder, L.

2009-03-01

Pixelated semiconductor detectors for X-ray imaging spectroscopy are foreseen as key components of the payload of various future space missions exploring the x-ray sky. Located on the platform of the new Spectrum-Roentgen-Gamma satellite, the eROSITA (extended Roentgen Survey with an Imaging Telescope Array) instrument will perform an imaging all-sky survey up to an X-ray energy of 10 keV with unprecedented spectral and angular resolution. The instrument will consist of seven parallel oriented mirror modules each having its own pnCCD camera in the focus. The satellite born X-ray observatory SIMBOL-X will be the first mission to use formation-flying techniques to implement an X-ray telescope with an unprecedented focal length of around 20 m. The detector instrumentation consists of separate high- and low energy detectors, a monolithic 128 × 128 DEPFET macropixel array and a pixellated CdZTe detector respectively, making energy band between 0.5 to 80 keV accessible. A similar concept is proposed for the next generation X-ray observatory IXO. Finally, the MIXS (Mercury Imaging X-ray Spectrometer) instrument on the European Mercury exploration mission BepiColombo will use DEPFET macropixel arrays together with a small X-ray telescope to perform a spatially resolved planetary XRF analysis of Mercury's crust. Here, the mission concepts and their scientific targets are briefly discussed, and the resulting requirements on the detector devices together with the implementation strategies are shown.

Type II superlattice technology for LWIR detectors

NASA Astrophysics Data System (ADS)

Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

2016-05-01

SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

Antenna-coupled Superconducting Bolometers for Observations of the Cosmic Microwave Background Polarization

NASA Astrophysics Data System (ADS)

Myers, Michael James

We describe the development of a novel millimeter-wave cryogenic detector. The device integrates a planar antenna, superconducting transmission line, bandpass filter, and bolometer onto a single silicon wafer. The bolometer uses a superconducting Transition-Edge Sensor (TES) thermistor, which provides substantial advantages over conventional semiconductor bolometers. The detector chip is fabricated using standard micro-fabrication techniques. This highly-integrated detector architecture is particularly well-suited for use in the de- velopment of polarization-sensitive cryogenic receivers with thousands of pixels. Such receivers are needed to meet the sensitivity requirements of next-generation cosmic microwave background polarization experiments. The design, fabrication, and testing of prototype array pixels are described. Preliminary considerations for a full array design are also discussed. A set of on-chip millimeter-wave test structures were developed to help understand the performance of our millimeter-wave microstrip circuits. These test structures produce a calibrated transmission measurement for an arbitrary two-port circuit using optical techniques, rather than a network analyzer. Some results of fabricated test structures are presented.

Numerical simulation of the modulation transfer function (MTF) in infrared focal plane arrays: simulation methodology and MTF optimization

NASA Astrophysics Data System (ADS)

Schuster, J.

2018-02-01

Military requirements demand both single and dual-color infrared (IR) imaging systems with both high resolution and sharp contrast. To quantify the performance of these imaging systems, a key measure of performance, the modulation transfer function (MTF), describes how well an optical system reproduces an objects contrast in the image plane at different spatial frequencies. At the center of an IR imaging system is the focal plane array (FPA). IR FPAs are hybrid structures consisting of a semiconductor detector pixel array, typically fabricated from HgCdTe, InGaAs or III-V superlattice materials, hybridized with heat/pressure to a silicon read-out integrated circuit (ROIC) with indium bumps on each pixel providing the mechanical and electrical connection. Due to the growing sophistication of the pixel arrays in these FPAs, sophisticated modeling techniques are required to predict, understand, and benchmark the pixel array MTF that contributes to the total imaging system MTF. To model the pixel array MTF, computationally exhaustive 2D and 3D numerical simulation approaches are required to correctly account for complex architectures and effects such as lateral diffusion from the pixel corners. It is paramount to accurately model the lateral di_usion (pixel crosstalk) as it can become the dominant mechanism limiting the detector MTF if not properly mitigated. Once the detector MTF has been simulated, it is directly decomposed into its constituent contributions to reveal exactly what is limiting the total detector MTF, providing a path for optimization. An overview of the MTF will be given and the simulation approach will be discussed in detail, along with how different simulation parameters effect the MTF calculation. Finally, MTF optimization strategies (crosstalk mitigation) will be discussed.

The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

PubMed Central

Cui, Haoyang; Xu, Yongpeng; Yang, Junjie; Tang, Naiyun; Tang, Zhong

2013-01-01

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction. PMID:24194676

The effect of metal-semiconductor contact on the transient photovoltaic characteristic of HgCdTe PV detector.

PubMed

Cui, Haoyang; Xu, Yongpeng; Yang, Junjie; Tang, Naiyun; Tang, Zhong

2013-01-01

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model of pn junction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced from p-n junction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by the pn junction.

Concept of a charged fusion product diagnostic for NSTX.

PubMed

Boeglin, W U; Valenzuela Perez, R; Darrow, D S

2010-10-01

The concept of a new diagnostic for NSTX to determine the time dependent charged fusion product emission profile using an array of semiconductor detectors is presented. The expected time resolution of 1-2 ms should make it possible to study the effect of magnetohydrodynamics and other plasma activities (toroidal Alfvén eigenmodes (TAE), neoclassical tearing modes (NTM), edge localized modes (ELM), etc.) on the radial transport of neutral beam ions. First simulation results of deuterium-deuterium (DD) fusion proton yields for different detector arrangements and methods for inverting the simulated data to obtain the emission profile are discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minami, R., E-mail: minami@prc.tsukuba.ac.jp; Imai, T.; Kariya, T.

Temporally and spatially resolved soft x-ray and end-loss-electron analyses of the electron cyclotron heated plasmas are carried out by using a semiconductor detector array and an electrostatic energy analyzer in the GAMMA 10 tandem mirror. The flux and the energy spectrum of the end loss electrons are measured by a multi-grid energy analyzer. Recently, the electron cyclotron heating power modulation experiments have been started in order to generate and control the high heat flux and to make the edge localized mode-like intermittent heat load pattern for the divertor simulation studies by the use of these detectors for electron properties.

PantherPix hybrid pixel γ-ray detector for radio-therapeutic applications

NASA Astrophysics Data System (ADS)

Neue, G.; Benka, T.; Havránek, M.; Hejtmánek, M.; Janoška, Z.; Kafka, V.; Korchak, O.; Lednický, D.; Marčišovská, M.; Marčišovský, M.; Popule, J.; Şmarhák, J.; Şvihra, P.; Tomášek, L.; Vrba, V.; Konček, O.; Semmler, M.

2018-02-01

This work focuses on the design of a semiconductor pixelated γ-ray camera with a pixel size of 1 mm2. The cost of semiconductor manufacturing is mainly driven by economies of scale, which makes silicon the cheapest semiconductor material due to its widespread utilization. The energy of γ-photons used in radiation therapy are in a range, in which the dominant interaction mechanism is Compton scattering in every conceivable sensor material. Since the Compton scattering cross section is linearly dependent upon Z, it is less rewarding to utilize high Z sensor materials, than it is in the case of X-ray detectors (X-rays interact also via the photoelectric effect whose cross section scales proportional to Zn, where n is ≈ 4,5). For the stated reasons it was decided to use the low Z material silicon (Z = 14) despite its worse detection efficiency. The proposed detector is designed as a portal detector to be used in radiation cancer therapy. The purpose of the detector is to ensure correct patient alignment, spatial dose monitoring and to provide the feedback necessary for an emergency shutdown should the spatial dose rate profile deviate from the treatment plan. Radiation therapy equipment is complex and thus failure prone and the consequences of malfunction are often life threatening. High spatial resolution and high detection efficiency are not a high design priority. The detector design priorities are focused up on radiation hardness, robustness and the ability to cover a large area cost efficiently. The quintessential idea of the PanterPix detector exploits the relaxed spatial resolution requirement to achieve the stated goals. The detector is composed of submodules, each submodule consisting of a Si sensor with an array of fully depleted detection diodes and 8 miniature custom design readout ASICs collecting and measuring the minuscule charge packets generated due to ionization in the PN junctions.

Wafer-fused semiconductor radiation detector

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

CMOS detector arrays in a virtual 10-kilopixel camera for coherent terahertz real-time imaging.

PubMed

Boppel, Sebastian; Lisauskas, Alvydas; Max, Alexander; Krozer, Viktor; Roskos, Hartmut G

2012-02-15

We demonstrate the principle applicability of antenna-coupled complementary metal oxide semiconductor (CMOS) field-effect transistor arrays as cameras for real-time coherent imaging at 591.4 GHz. By scanning a few detectors across the image plane, we synthesize a focal-plane array of 100×100 pixels with an active area of 20×20 mm2, which is applied to imaging in transmission and reflection geometries. Individual detector pixels exhibit a voltage conversion loss of 24 dB and a noise figure of 41 dB for 16 μW of the local oscillator (LO) drive. For object illumination, we use a radio-frequency (RF) source with 432 μW at 590 GHz. Coherent detection is realized by quasioptical superposition of the image and the LO beam with 247 μW. At an effective frame rate of 17 Hz, we achieve a maximum dynamic range of 30 dB in the center of the image and more than 20 dB within a disk of 18 mm diameter. The system has been used for surface reconstruction resolving a height difference in the μm range.

High Sensitivity Long-Wavelength Infrared QWIP Focal Plane Array Based Instrument for Remote Sensing of Icy Satellites

NASA Technical Reports Server (NTRS)

Gunapala, S.; Bandara, S.; Ivanov, A.

2003-01-01

GaAs based Quantum Well Infrared Photodetector (QWIP) technology has shown remarkable success in advancing low cost, highly uniform, high-operability, large format multi-color focal plane arrays. QWIPs afford greater flexibility than the usual extrinsically doped semiconductor IR detectors. The wavelength of the peak response and cutoff can be continuously tailored over a range wide enough to enable light detection at any wavelength range between 6 and 20 micron. The spectral band-width of these detectors can be tuned from narrow (Deltalambda/lambda is approximately 10%) to wide (Deltalambda/lambda is approximately 40%) allowing various applications. Furthermore, QWIPs offer low cost per pixel and highly uniform large format focal plane arrays due to mature GaAs/AlGaAs growth and processing technologies. The other advantages of GaAs/AlGaAs based QWIPS are higher yield, lower l/f noise and radiation hardness (1.5 Mrad). In this presentation, we will discuss our recent demonstrations of 640x512 pixel narrow-band, broad-band, multi-band focal plane arrays, and the current status of the development of 1024x1024 pixel long-wavelength infrared QWIP focal plane arrays.

Development of a gallium-doped germanium far-infrared photoconductor direct hybrid two-dimensional array.

PubMed

Fujiwara, Mikio; Hirao, Takanori; Kawada, Mitsunobu; Shibai, Hiroshi; Matsuura, Shuji; Kaneda, Hidehiro; Patrashin, Mikhail; Nakagawa, Takao

2003-04-20

To our knowledge, we are the first to successfully report a direct hybrid two-dimensional (2D) detector array in the far-infrared region. Gallium-doped germanium (Ge:Ga) has been used extensively to produce sensitive far-infrared detectors with a cutoff wavelength of approximately equal to 110 microm (2.7 THz). It is widely used in the fields of astronomy and molecular and solid spectroscopy. However, Ge:Ga photoconductors must be cooled below 4.2 K to reduce thermal noise, and this operating condition makes it difficult to develop a large format array because of the need for a warm amplifier. Development of Ge:Ga photoconductor arrays to take 2D terahertz images is now an important target in such research fields as space astronomy. We present the design of a 20 x 3 Ge:Ga far-infrared photoconductor array directly hybridized to a Si p-type metal-oxide-semiconductor readout integrated circuit using indium-bump technology. The main obstacles in creating this 2D array were (1) fabricating a monolithic Ge:Ga 2D array with a longitudinal configuration, (2) developing a cryogenic capacitive transimpedance amplifer, and (3) developing a technology for connecting the detector to the electronics. With this technology, a prototype Ge:Ga photoconductor with a direct hybrid structure has shown a responsivity as high as 14.6 A/W and a minimum detectable power of 5.6 x 10(-17) W for an integration time of 0.14 s when it was cooled to 2.1 K. Its noise is limited by the readout circuit with 20 microV/Hz(1/2) at 1 Hz. Vibration and cooling tests demonstrated that this direct hybrid structure is strong enough for spaceborne instruments. This detector array will be installed on the Japanese infrared satellite ASTRO-F.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Detection systems for mass spectrometry imaging: a perspective on novel developments with a focus on active pixel detectors.

PubMed

Jungmann, Julia H; Heeren, Ron M A

2013-01-15

Instrumental developments for imaging and individual particle detection for biomolecular mass spectrometry (imaging) and fundamental atomic and molecular physics studies are reviewed. Ion-counting detectors, array detection systems and high mass detectors for mass spectrometry (imaging) are treated. State-of-the-art detection systems for multi-dimensional ion, electron and photon detection are highlighted. Their application and performance in three different imaging modes--integrated, selected and spectral image detection--are described. Electro-optical and microchannel-plate-based systems are contrasted. The analytical capabilities of solid-state pixel detectors--both charge coupled device (CCD) and complementary metal oxide semiconductor (CMOS) chips--are introduced. The Medipix/Timepix detector family is described as an example of a CMOS hybrid active pixel sensor. Alternative imaging methods for particle detection and their potential for future applications are investigated. Copyright © 2012 John Wiley & Sons, Ltd.

The COBRA demonstrator at the LNGS underground laboratory

NASA Astrophysics Data System (ADS)

Ebert, J.; Fritts, M.; Gehre, D.; Gößling, C.; Göpfert, T.; Hagner, C.; Heidrich, N.; Klingenberg, R.; Köttig, T.; Kröninger, K.; Michel, T.; Neddermann, T.; Nitsch, C.; Oldorf, C.; Quante, T.; Rajek, S.; Rebber, H.; Reinecke, O.; Rohatsch, K.; Schulz, O.; Sörensen, A.; Stekl, I.; Tebrügge, J.; Temminghoff, R.; Theinert, R.; Timm, J.; Wester, T.; Wonsak, B.; Zatschler, S.; Zuber, K.

2016-01-01

The COBRA demonstrator, a prototype for a large-scale experiment searching for neutrinoless double beta-decay, was built at the underground laboratory Laboratori Nazionali del Gran Sasso (LNGS) in Italy. It consists of an array of 64 monolithic, calorimetric CdZnTe semiconductor detectors with a coplanar-grid design and a total mass of 380 g. It is used to investigate the experimental challenges faced when operating CdZnTe detectors in low-background mode, to identify potential background sources and to show the long-term stability of the detectors. The first data-taking period started in 2011 with a subset of the detectors, while the demonstrator was completed in November 2013. To date, more than 250 kg d of data have been collected. This paper describes the technical details of the experimental setup and the hardware components.

Preliminary test data using the MOS DRO with Si:In detector material

NASA Technical Reports Server (NTRS)

Fowler, A. M.; Britt, J. P.; Joyce, R. R.; Probst, R. G.; Gates, J. L.

1986-01-01

The initial testing performed on the Hughes Metal Oxide Semiconductor Direct Readout (MOS DRO) with a Si:In extrinsic infrared array is described. The testing to date was of a screening nature and the results are primarily qualitative rather than quantitative. At a later date the performance optimization phase will be initiated. An encouraging result is that this response is strongly dependent on the detector temperature, to the extent that thermal transients introduced during the chip readout will affect the performance. A responsivity of 1 A/W at 2.2 microns with a bias of 15 volts, which is well below what is optimum bias, was obtained.

Electron gas grid semiconductor radiation detectors

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Design and test of data acquisition systems for the Medipix2 chip based on PC standard interfaces

NASA Astrophysics Data System (ADS)

Fanti, Viviana; Marzeddu, Roberto; Piredda, Giuseppina; Randaccio, Paolo

2005-07-01

We describe two readout systems for hybrid detectors using the Medipix2 single photon counting chip, developed within the Medipix Collaboration. The Medipix2 chip (256×256 pixels, 55 μm pitch) has an active area of about 2 cm 2 and is bump-bonded to a pixel semiconductor array of silicon or other semiconductor material. The readout systems we are developing are based on two widespread standard PC interfaces: parallel port and USB (Universal Serial Bus) version 1.1. The parallel port is the simplest PC interface even if slow and the USB is a serial bus interface present nowadays on all PCs and offering good performances.

MARE-l in Milan: Status and Perspectives

NASA Technical Reports Server (NTRS)

Ferri, E.; Arnaboldi, C.; Ceruti, G.; Faverzani, M.; Gatti, C.; Giachero, A.; Gotti, C.; Kilbourne, C.; Kraft-Bermuth, S.; Nucciotti, A.;

Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

DTIC Science & Technology

2011-12-01

communication links using VCSEL arrays [1, 2], medical imaging using super luminescent diodes [3], and tunable lasers capable of remotely sensing...increase the efficiency of solar cells [6, 7, 8], vastly improve photo detector sensitivity [9], and provide optical memory storage densities predicted...semiconductor lasers” Applied Physics B: Lasers and Optics, Volume 90, Number 2, 2008, Pages 339-343. 6. Nozik, A.J. “Quantum dot solar cells

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Development of an ultra-compact mid-infrared attenuated total reflectance spectrophotometer

NASA Astrophysics Data System (ADS)

Kim, Dong Soo; Lee, Tae-Ro; Yoon, Gilwon

2014-07-01

Mid-infrared spectroscopy has been an important tool widely used for qualitative analysis in various fields. However, portable or personal use is size and cost prohibitive for either Fourier transform infrared or attenuated total reflectance (ATR) spectrophotometers. In this study, we developed an ultra-compact ATR spectrophotometer whose frequency band was 5.5-11.0 μm. We used miniature components, such as a light source fabricated by semiconductor technology, a linear variable filter, and a pyro-electric array detector. There were no moving parts. Optimal design based on two light sources, a zippered configuration of the array detector and ATR optics could produce absorption spectra that might be used for qualitative analysis. A microprocessor synchronized the pulsed light sources and detector, and all the signals were processed digitally. The size was 13.5×8.5×3.5 cm3 and the weight was 300 grams. Due to its low cost, our spectrophotometer can replace many online monitoring devices. Another application could be for a u-healthcare system installed in the bathroom or attached to a smartphone for monitoring substances in body fluids.

Terahertz Array Receivers with Integrated Antennas

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Llombart, Nuria; Lee, Choonsup; Jung, Cecile; Lin, Robert; Cooper, Ken B.; Reck, Theodore; Siles, Jose; Schlecht, Erich; Peralta, Alessandro;

Mosaic-Detector-Based Fluorescence Spectral Imager

NASA Technical Reports Server (NTRS)

Son, Kyung-Ah; Moon, Jeong

2007-01-01

A battery-powered, pen-sized, portable instrument for measuring molecular fluorescence spectra of chemical and biological samples in the field has been proposed. Molecular fluorescence spectroscopy is among the techniques used most frequently in laboratories to analyze compositions of chemical and biological samples. Heretofore, it has been possible to measure fluorescence spectra of molecular species at relative concentrations as low as parts per billion (ppb), with a few nm spectral resolution. The proposed instrument would include a planar array (mosaic) of detectors, onto which a fluorescence spectrum would be spatially mapped. Unlike in the larger laboratory-type molecular fluorescence spectrometers, mapping of wavelengths to spatial positions would be accomplished without use of relatively bulky optical parts. The proposed instrument is expected to be sensitive enough to enable measurement of spectra of chemical species at relative concentrations <1 ppb, with spectral resolution that could be tailored by design to be comparable to a laboratory molecular fluorescence spectrometer. The proposed instrument (see figure) would include a button-cell battery and a laser diode, which would generate the monochromatic ultraviolet light needed to excite fluorescence in a sample. The sample would be held in a cell bounded by far-ultraviolet-transparent quartz or optical glass. The detector array would be, more specifically, a complementary metal oxide/ semiconductor or charge-coupled- device imaging photodetector array, the photodetectors of which would be tailored to respond to light in the wavelength range of the fluorescence spectrum to be measured. The light-input face of the photodetector array would be covered with a matching checkerboard array of multilayer thin film interference filters, such that each pixel in the array would be sensitive only to light in a spectral band narrow enough so as not to overlap significantly with the band of an adjacent pixel. The wavelength interval between adjacent pixels (and, thus, the spectral resolution) would typically be chosen by design to be approximately equal to the width of the total fluorescence wavelength range of interest divided by the number of pixels. The unitary structure comprising the photodetector array overlaid with the matching filter array would be denoted a hyperspectral mosaic detector (HMD) array.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

DOEpatents

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

High operation temperature of HgCdTe photodiodes by bulk defect passivation

NASA Astrophysics Data System (ADS)

Boieriu, Paul; Velicu, S.; Bommena, R.; Buurma, C.; Blisset, C.; Grein, C.; Sivananthan, S.; Hagler, P.

2013-01-01

Spatial noise and the loss of photogenerated current due material non-uniformities limit the performance of long wavelength infrared (LWIR) HgCdTe detector arrays. Reducing the electrical activity of defects is equivalent to lowering their density, thereby allowing detection and discrimination over longer ranges. Infrared focal plane arrays (IRFPAs) in other spectral bands will also benefit from detectivity and uniformity improvements. Larger signal-to-noise ratios permit either improved accuracy of detection/discrimination when an IRFPA is employed under current operating conditions, or provide similar performance with the IRFPA operating under less stringent conditions such as higher system temperature, increased system jitter or damaged read out integrated circuit (ROIC) wells. The bulk passivation of semiconductors with hydrogen continues to be investigated for its potential to become a tool for the fabrication of high performance devices. Inductively coupled plasmas have been shown to improve the quality and uniformity of semiconductor materials and devices. The retention of the benefits following various aging conditions is discussed here.

Hybrid anode for semiconductor radiation detectors

DOEpatents

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

An experiment to study the nuclear component of primary cosmic rays

NASA Technical Reports Server (NTRS)

Paul, J. M.; Verma, S. D.

1971-01-01

An apparatus has been designed and is being fabricated to study the charge composition, fluxes, and energy spectra of light nuclei in the energy region from 1 GeV to 100 GeV. The apparatus essentially consists of an array of a large number of particle detectors operated in coincidence and serving as a charged particle telescope. A mosaic silicon semiconductor detector, a plastic scintillation counter and a lucite Cerenkov detector are used to measure the charges of the incident nuclei. Two one-inch thick CsI detectors are used to study low energy particles. An ionization spectrometer is utilized to measure primary energies in the 1 to 100 GeV energy interval. A gas Cerenkov counter is being designed to distinguish between electrons and protons. It is planned to calibrate the apparatus at an accelerator using particles of known energy.

Concept Doped-Silicon Thermopile Detectors for Future Planetary Thermal Imaging Instruments

NASA Astrophysics Data System (ADS)

Lakew, Brook; Barrentine, Emily M.; Aslam, Shahid; Brown, Ari D.

2016-10-01

Presently, uncooled thermopiles are the detectors of choice for thermal mapping in the 4.6-100 μm spectral range. Although cooled detectors like Ge or Si thermistor bolometers, and MgB2 or YBCO superconducting bolometers, have much higher sensitivity, the required active or passive cooling mechanisms add prohibitive cost and mass for long duration missions. Other uncooled detectors, likepyroelectrics, require a motor mechanism to chop against a known reference temperature, which adds unnecessary mission risk. Uncooled vanadium oxide or amorphous Si microbolometer arrays with integrated CMOS readout circuits, not only have lower sensitivity, but also have not been proven to be radiation hard >100 krad (Si) total ionizing dose, and barring additional materials and readout development, their performance has reached a plateau.Uncooled and radiation hard thermopiles with D* ~1x109 cm√Hz/W and time constant τ ~100 ms have been integrated into thermal imaging instruments on several past missions and have extensive flight heritage (Mariner, Voyager, Cassini, LRO, MRO). Thermopile arrays are also on the MERTIS instrument payload on-board the soon to be launched BepiColombo Mission.To date, thermopiles used for spaceflight instrumentation have consisted of either hand assembled "one-off" single thermopile pixels or COTS thermopile pixel arrays both using Bi-Sb or Bi-Te thermoelectric materials. For future high performance imagers, thermal detector arrays with higher D*, lower τ, and high efficiency delineated absorbers are desirable. Existing COTS and other flight thermopile designs require highly specialized and nonstandard processing techniques to fabricate both the Bi-Sb or Bi-Te thermocouples and the gold or silver black absorbers, which put limitations on further development.Our detector arrays will have a D* ≥ 3x109 cm√Hz/W and a thermal time constant ≤ 30 ms at 170 K. They will be produced using proven, standard semiconductor and MEMS fabrication techniques, which will enable the future integration of other ancillary structures like high efficiency broadband absorbers, which will result in D* ≥ 5x109 cm√Hz/W.

Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nam, Chang-Yong; Stein, Aaron

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less

Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE PAGES

Nam, Chang-Yong; Stein, Aaron

2017-11-15

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less

Dual use of photonic components in radiation environments

NASA Astrophysics Data System (ADS)

Taylor, Edward W.

1994-06-01

The steady evolution of and increased requirement for using photonic technologies within the commercial market coupled with decreased defense spending has brought forth new national philosophies regarding widespread use of the technology in both military and commercial sectors. Many commercially available photonic components (i.e., optical fibers, laser diodes, semiconductor detectors, detector arrays, spatial light modulators, integrated optic circuitry and other similar optoelectronic and electro-optic devices are being scrutinized for utility, cost effectiveness and dual-use in a variety of applications. One important area of application is space. This paper will discuss the current state-of-the-art and utility of qualifying and using several mature photonic component technologies in commercial and defense application areas.

Direct conversion semiconductor detectors in positron emission tomography

NASA Astrophysics Data System (ADS)

Cates, Joshua W.; Gu, Yi; Levin, Craig S.

2015-05-01

Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

Field-Induced-Gap Infrared Detectors

NASA Technical Reports Server (NTRS)

Elliott, C. Thomas

1990-01-01

Semimetals become semiconductors under applied magnetic fields. New detectors require less cooling equipment because they operate at temperatures higher than liquid-helium temperatures required by extrinsic-semiconductor detectors. Magnetic fields for detectors provided by electromagnets based on recently-discovered high-transition-temperature superconducting materials. Detector material has to be semiconductor, in which photon absorbed by exciting electron/hole pair across gap Eg of forbidden energies between valence and conduction energy bands. Magnetic- and compositional-tuning effects combined to obtain two-absorber detector having narrow passband. By variation of applied magnetic field, passband swept through spectrum of interest.

High-performance IR detectors at SCD present and future

NASA Astrophysics Data System (ADS)

Nesher, O.; Klipstein, P. C.

2005-09-01

For over 27 years, SCD has been manufacturing and developing a wide range of high performance infra-red detectors, designed to operate in either the mid-wave (MWIR) or the long-wave (LWIR) atmospheric windows. These detectors have been integrated successfully into many different types of system including missile seekers, Time Delay Integration scanning systems, Hand-Held cameras, Missile Warning Systems and many others. SCD's technology for the MWIR wavelength range is based on its well established 2-D arrays of InSb photodiodes. The arrays are flip-chip bonded to SCD's analogue or digital signal processors, all of which have been designed in-house. The 2-D Focal Plane Array (FPA) detectors have a format of 320×256 elements for a 30 μm pitch and 480×384 or 640×512 elements for a 20 μm pitch. Typical operating temperatures are around 77-85K. Five years ago SCD began to develop a new generation of MWIR detectors based on the epitaxial growth of Antimonide Based Compound Semiconductors (ABCS). This ABCS technology allows band-gap engineering of the detection material which enables higher operating temperatures and multi-spectral detection. This year SCD presented its first prototype FPA from this program, an InAlSb based detector operating at a temperature of 100 K. By the end of this year SCD will introduce the first prototype MWIR detector with a 640×512 element format and a pitch of 15 μm. For the LWIR wave-length range SCD manufactures both linear Hg1-xCdxTe (MCT) detectors with a line of 250 elements and Time Delay and Integration (TDI) detectors with formats of 288×4 and 480×6. Recently, SCD has demonstrated its first prototype un-cooled detector which is based on VOx technology and which has a format of 384×288 elements, a pitch of 25 μm and a typical NETD of 50mK at F/1. In this paper we describe the present technologies and products of SCD and the future evolution of our detectors for the MWIR and LWIR detection.

High-performance IR detectors at SCD present and future

NASA Astrophysics Data System (ADS)

Nesher, O.; Klipstein, P. C.

2006-03-01

For over 27 years, SCD has been manufacturing and developing a wide range of high performance infrared detectors, designed to operate in either the mid-wave (MWIR) or the long-wave (LWIR) atmospheric windows. These detectors have been integrated successfully into many different types of system including missile seekers, time delay integration scanning systems, hand-held cameras, missile warning systems and many others. SCD's technology for the MWIR wavelength range is based on its well established 2D arrays of InSb photodiodes. The arrays are flip-chip bonded to SCD's analogue or digital signal processors, all of which have been designed in-house. The 2D focal plane array (FPA) detectors have a format of 320×256 elements for a 30-μm pitch and 480×384 or 640×512 elements for a 20-μm pitch. Typical operating temperatures are around 77-85 K. Five years ago SCD began to develop a new generation of MWIR detectors based on the epitaxial growth of antimonide based compound semiconductors (ABCS). This ABCS technology allows band-gap engineering of the detection material which enables higher operating temperatures and multi-spectral detection. This year SCD presented its first prototype FPA from this program, an InAlSb based detector operating at a temperature of 100 K. By the end of this year SCD will introduce the first prototype MWIR detector with a 640×512 element format and a pitch of 15 μm. For the LWIR wavelength range SCD manufactures both linear Hg1-xCdxTe (MCT) detectors with a line of 250 elements and time delay and integration (TDI) detectors with formats of 288×4 and 480×6. Recently, SCD has demonstrated its first prototype uncooled detector which is based on VOx technology and which has a format of 384×288 elements, a pitch of 25 μm, and a typical NETD of 50 mK at F/1. In this paper, we describe the present technologies and products of SCD and the future evolution of our detectors for the MWIR and LWIR detection.

Development and Production of Array Barrier Detectors at SCD

NASA Astrophysics Data System (ADS)

Klipstein, P. C.; Avnon, E.; Benny, Y.; Berkowicz, E.; Cohen, Y.; Dobromislin, R.; Fraenkel, R.; Gershon, G.; Glozman, A.; Hojman, E.; Ilan, E.; Karni, Y.; Klin, O.; Kodriano, Y.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nevo, I.; Nitzani, M.; Pivnik, I.; Rappaport, N.; Rosenberg, O.; Shtrichman, I.; Shkedy, L.; Snapi, N.; Talmor, R.; Tessler, R.; Weiss, E.; Tuito, A.

2017-09-01

XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced "HOT Pelican D", a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ˜150 K. Its low power (˜3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, "HOT Hercules" was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ("HOT Blackbird") is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch "Pelican-D LW" XB p type II superlattice (T2SL) detector has a ˜9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ˜50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7.

SPECT detectors: the Anger Camera and beyond

PubMed Central

Peterson, Todd E.; Furenlid, Lars R.

2011-01-01

The development of radiation detectors capable of delivering spatial information about gamma-ray interactions was one of the key enabling technologies for nuclear medicine imaging and, eventually, single-photon emission computed tomography (SPECT). The continuous NaI(Tl) scintillator crystal coupled to an array of photomultiplier tubes, almost universally referred to as the Anger Camera after its inventor, has long been the dominant SPECT detector system. Nevertheless, many alternative materials and configurations have been investigated over the years. Technological advances as well as the emerging importance of specialized applications, such as cardiac and preclinical imaging, have spurred innovation such that alternatives to the Anger Camera are now part of commercial imaging systems. Increased computing power has made it practical to apply advanced signal processing and estimation schemes to make better use of the information contained in the detector signals. In this review we discuss the key performance properties of SPECT detectors and survey developments in both scintillator and semiconductor detectors and their readouts with an eye toward some of the practical issues at least in part responsible for the continuing prevalence of the Anger Camera in the clinic. PMID:21828904

Photon detector configured to employ the Gunn effect and method of use

DOEpatents

Cich, Michael J

2015-03-17

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

Editorial

NASA Astrophysics Data System (ADS)

Bruzzi, Mara; Cartiglia, Nicolo; Pace, Emanuele; Talamonti, Cinzia

2015-10-01

The 10th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD) was held in Florence, at Dipartimento di Fisica ed Astronomia on October 8-10, 2014. It has been aimed at discussing frontier research activities in several application fields as nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference concern performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), ultra-fast silicon detectors design and manufacturing, high-band gap semiconductor detectors, novel semiconductor-based devices for medical applications, radiation damage issues in semiconductors and related radiation-hardening technologies.

Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

2016-03-01

Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

Entangled γ-photons—classical laboratory exercise with modern detectors

NASA Astrophysics Data System (ADS)

Hetfleiš, Jakub; Lněnička, Jindřich; Šlégr, Jan

2018-03-01

This paper describes the application of modern semiconductor detectors of γ and β radiation, which can be used in undergraduate laboratory experiments and lecture demonstrations as a replacement for Geiger-Müller (GM) tubes. Unlike GM tubes, semiconductor detectors do not require a high voltage power source or shaping circuits. The principle of operation of semiconductor detectors is discussed briefly, and classical experiments from nuclear physics are described, ranging from the measurements of linear and mass attenuation coefficient to a demonstration of entangled γ-photons.

Position-sensitive coincidence detection of nuclear reaction products at the Prague Van-de-Graaff accelerator

NASA Astrophysics Data System (ADS)

Granja, Carlos; Kraus, Vaclav; Pugatch, Valery; Kohout, Zdenek

2017-06-01

In low-energy nuclear reactions of astrophysical interest or fusion studies the spatial- and time-correlated detection of two and more reaction products can be a valuable tool in studies of reaction mechanisms, resolving reaction channels and measuring angular distributions of reaction products. For this purpose we constructed a configurable array of position-sensitive detectors based on the hybrid semiconductor pixel detector Timepix. Additional analog-signal electronics provide self-trigger together with extended multi-device control and synchronized readout electronics by a customized control and coincidence unit. The instrumentation, developed and used for detection of fission fragments in spontaneous and neutron induced fission as well as in charged particle detection in neutron induced reactions, is being implemented for low-energy light-ion induced nuclear reactions. Application and demonstration of the technique with two Timepix detectors on p+p elastic scattering at the Van-de-Graaff (VdG) accelerator in Prague is given.

OPTIMIZATION OF VIRTUAL FRISCH-GRID CdZnTe DETECTOR DESIGNS FOR IMAGING AND SPECTROSCOPY OF GAMMA RAYS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

BOLOTNIKOV,A.E.; ABDUL-JABBAR, N.M.; BABALOLA, S.

2007-08-21

In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5{approx}12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design formore » the parallelepiped-shaped CZT crystals. Both the experimental testing and modeling results are described.« less

A novel pixellated solid-state photon detector for enhancing the Everhart-Thornley detector.

PubMed

Chuah, Joon Huang; Holburn, David

2013-06-01

This article presents a pixellated solid-state photon detector designed specifically to improve certain aspects of the existing Everhart-Thornley detector. The photon detector was constructed and fabricated in an Austriamicrosystems 0.35 µm complementary metal-oxide-semiconductor process technology. This integrated circuit consists of an array of high-responsivity photodiodes coupled to corresponding low-noise transimpedance amplifiers, a selector-combiner circuit and a variable-gain postamplifier. Simulated and experimental results show that the photon detector can achieve a maximum transimpedance gain of 170 dBΩ and minimum bandwidth of 3.6 MHz. It is able to detect signals with optical power as low as 10 nW and produces a minimum signal-to-noise ratio (SNR) of 24 dB regardless of gain configuration. The detector has been proven to be able to effectively select and combine signals from different pixels. The key advantages of this detector are smaller dimensions, higher cost effectiveness, lower voltage and power requirements and better integration. The photon detector supports pixel-selection configurability which may improve overall SNR and also potentially generate images for different analyses. This work has contributed to the future research of system-level integration of a pixellated solid-state detector for secondary electron detection in the scanning electron microscope. Copyright © 2013 Wiley Periodicals, Inc.

High-sensitivity brain SPECT system using cadmium telluride (CdTe) semiconductor detector and 4-pixel matched collimator.

PubMed

Suzuki, Atsuro; Takeuchi, Wataru; Ishitsu, Takafumi; Tsuchiya, Katsutoshi; Morimoto, Yuichi; Ueno, Yuichiro; Kobashi, Keiji; Kubo, Naoki; Shiga, Tohru; Tamaki, Nagara

2013-11-07

For high-sensitivity brain imaging, we have developed a two-head single-photon emission computed tomography (SPECT) system using a CdTe semiconductor detector and 4-pixel matched collimator (4-PMC). The term, '4-PMC' indicates that the collimator hole size is matched to a 2 × 2 array of detector pixels. By contrast, a 1-pixel matched collimator (1-PMC) is defined as a collimator whose hole size is matched to one detector pixel. The performance of the higher-sensitivity 4-PMC was experimentally compared with that of the 1-PMC. The sensitivities of the 1-PMC and 4-PMC were 70 cps/MBq/head and 220 cps/MBq/head, respectively. The SPECT system using the 4-PMC provides superior image resolution in cold and hot rods phantom with the same activity and scan time to that of the 1-PMC. In addition, with half the usual scan time the 4-PMC provides comparable image quality to that of the 1-PMC. Furthermore, (99m)Tc-ECD brain perfusion images of healthy volunteers obtained using the 4-PMC demonstrated acceptable image quality for clinical diagnosis. In conclusion, our CdTe SPECT system equipped with the higher-sensitivity 4-PMC can provide better spatial resolution than the 1-PMC either in half the imaging time with the same administered activity, or alternatively, in the same imaging time with half the activity.

Paul W. Kruse (1927-2012), In Memoriam

NASA Astrophysics Data System (ADS)

Reine, Marion B.; Norton, Paul R.; Stelzer, Ernie L.

2013-06-01

During his distinguished 37-year career as a research physicist at the Honeywell Research Center in Minneapolis, Minnesota, Dr. Paul W. Kruse (1927-2012) played leadership roles in two disruptive infrared detector technologies, the narrow-gap semiconductor alloy HgCdTe and the silicon CMOS-based microbolometer array, both of which revolutionized the worldwide infrared detector industry. He served on numerous government advisory boards and panels, including the Army Scientific Advisory Panel and the Army Science Board, for which he received the Outstanding Civilian Service Medal. After retiring for Honeywell in 1993, he remained active in the infrared detector field in several roles: as a successful small-business entrepreneur, as an author of two books, and as a SPIE lecturer. His books, papers and lectures have educated new generations of workers in the infrared detector industry. His career, a model for industrial research physicists, has had major and permanent impacts on the worldwide infrared detector industry. This paper is a summary of the career of Paul W. Kruse, as well as a tribute to that career and its lasting legacy.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

NASA Astrophysics Data System (ADS)

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including: the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half-maximum (FWHM) across the entire dynamic range, and a noise floor about 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

PubMed Central

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2014-01-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications. PMID:25937684

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications.

PubMed

Barber, W C; Wessel, J C; Nygard, E; Iwanczyk, J S

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging

PubMed Central

Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

2017-01-01

The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method. PMID:28553175

Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

NASA Astrophysics Data System (ADS)

Samedov, Victor V.

2018-01-01

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Lipson, Jerold

2012-01-01

The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

Scalable gamma-ray camera for wide-area search based on silicon photomultipliers array

NASA Astrophysics Data System (ADS)

Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

2018-03-01

Portable coded-aperture imaging systems based on scintillators and semiconductors have found use in a variety of radiological applications. For stand-off detection of weakly emitting materials, large volume detectors can facilitate the rapid localization of emitting materials. We describe a scalable coded-aperture imaging system based on 5.02 × 5.02 cm2 CsI(Tl) scintillator modules, each partitioned into 4 × 4 × 20 mm3 pixels that are optically coupled to 12 × 12 pixel silicon photo-multiplier (SiPM) arrays. The 144 pixels per module are read-out with a resistor-based charge-division circuit that reduces the readout outputs from 144 to four signals per module, from which the interaction position and total deposited energy can be extracted. All 144 CsI(Tl) pixels are readily distinguishable with an average energy resolution, at 662 keV, of 13.7% FWHM, a peak-to-valley ratio of 8.2, and a peak-to-Compton ratio of 2.9. The detector module is composed of a SiPM array coupled with a 2 cm thick scintillator and modified uniformly redundant array mask. For the image reconstruction, cross correlation and maximum likelihood expectation maximization methods are used. The system shows a field of view of 45° and an angular resolution of 4.7° FWHM.

Tomographic Small-Animal Imaging Using a High-Resolution Semiconductor Camera

PubMed Central

Kastis, GA; Wu, MC; Balzer, SJ; Wilson, DW; Furenlid, LR; Stevenson, G; Barber, HB; Barrett, HH; Woolfenden, JM; Kelly, P; Appleby, M

2015-01-01

We have developed a high-resolution, compact semiconductor camera for nuclear medicine applications. The modular unit has been used to obtain tomographic images of phantoms and mice. The system consists of a 64 x 64 CdZnTe detector array and a parallel-hole tungsten collimator mounted inside a 17 cm x 5.3 cm x 3.7 cm tungsten-aluminum housing. The detector is a 2.5 cm x 2.5 cm x 0.15 cm slab of CdZnTe connected to a 64 x 64 multiplexer readout via indium-bump bonding. The collimator is 7 mm thick, with a 0.38 mm pitch that matches the detector pixel pitch. We obtained a series of projections by rotating the object in front of the camera. The axis of rotation was vertical and about 1.5 cm away from the collimator face. Mouse holders were made out of acrylic plastic tubing to facilitate rotation and the administration of gas anesthetic. Acquisition times were varied from 60 sec to 90 sec per image for a total of 60 projections at an equal spacing of 6 degrees between projections. We present tomographic images of a line phantom and mouse bone scan and assess the properties of the system. The reconstructed images demonstrate spatial resolution on the order of 1–2 mm. PMID:26568676

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

Study on Effects of Gamma-Ray Irradiation on TlBr Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Matsumura, Motohiro; Watanabe, Kenichi; Yamazaki, Atsushi; Uritani, Akira; Kimura, Norihisa; Nagano, Nobumichi; Hitomi, Keitaro

Radiation hardness of thallium bromide (TlBr) semiconductor detectors to 60Co gamma-ray irradiation was evaluated. The energy spectra and μτ products of electrons were measured to evaluate the irradiation effects. No significant degradation of spectroscopic performance of the TlBr detector for 137Cs gamma-rays was observed up to 45 kGy irradiation. Although the μτ products of electrons in the TlBr detector slightly decreased, position of the photo-peak was stable without significant degradation after the gamma-ray irradiation. We confirmed that the TlBr semiconductor detector has a high tolerance for gamma-ray irradiation at least up to 45 kGy.

SU-C-201-03: Coded Aperture Gamma-Ray Imaging Using Pixelated Semiconductor Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, S; Kaye, W; Jaworski, J

2015-06-15

Purpose: Improved localization of gamma-ray emissions from radiotracers is essential to the progress of nuclear medicine. Polaris is a portable, room-temperature operated gamma-ray imaging spectrometer composed of two 3×3 arrays of thick CdZnTe (CZT) detectors, which detect gammas between 30keV and 3MeV with energy resolution of <1% FWHM at 662keV. Compton imaging is used to map out source distributions in 4-pi space; however, is only effective above 300keV where Compton scatter is dominant. This work extends imaging to photoelectric energies (<300keV) using coded aperture imaging (CAI), which is essential for localization of Tc-99m (140keV). Methods: CAI, similar to the pinholemore » camera, relies on an attenuating mask, with open/closed elements, placed between the source and position-sensitive detectors. Partial attenuation of the source results in a “shadow” or count distribution that closely matches a portion of the mask pattern. Ideally, each source direction corresponds to a unique count distribution. Using backprojection reconstruction, the source direction is determined within the field of view. The knowledge of 3D position of interaction results in improved image quality. Results: Using a single array of detectors, a coded aperture mask, and multiple Co-57 (122keV) point sources, image reconstruction is performed in real-time, on an event-by-event basis, resulting in images with an angular resolution of ∼6 degrees. Although material nonuniformities contribute to image degradation, the superposition of images from individual detectors results in improved SNR. CAI was integrated with Compton imaging for a seamless transition between energy regimes. Conclusion: For the first time, CAI has been applied to thick, 3D position sensitive CZT detectors. Real-time, combined CAI and Compton imaging is performed using two 3×3 detector arrays, resulting in a source distribution in space. This system has been commercialized by H3D, Inc. and is being acquired for various applications worldwide, including proton therapy imaging R&D.« less

Semiconductor wire array structures, and solar cells and photodetectors based on such structures

DOEpatents

Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

2014-08-19

A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

NASA Astrophysics Data System (ADS)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-05-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Quadrupole ion traps and trap arrays: geometry, material, scale, performance.

PubMed

Ouyang, Z; Gao, L; Fico, M; Chappell, W J; Noll, R J; Cooks, R G

2007-01-01

Quadrupole ion traps are reviewed, emphasizing recent developments, especially the investigation of new geometries, guided by multiple particle simulations such as the ITSIM program. These geometries include linear ion traps (LITs) and the simplified rectilinear ion trap (RIT). Various methods of fabrication are described, including the use of rapid prototyping apparatus (RPA), in which 3D objects are generated through point-by-point laser polymerization. Fabrication in silicon using multilayer semi-conductor fabrication techniques has been used to construct arrays of micro-traps. The performance of instruments containing individual traps as well as arrays of traps of various sizes and geometries is reviewed. Two types of array are differentiated. In the first type, trap arrays constitute fully multiplexed mass spectrometers in which multiple samples are examined using multiple sources, analyzers and detectors, to achieve high throughput analysis. In the second, an array of individual traps acts collectively as a composite trap to increase trapping capacity and performance for a single sample. Much progress has been made in building miniaturized mass spectrometers; a specific example is a 10 kg hand-held tandem mass spectrometer based on the RIT mass analyzer. The performance of this instrument in air and water analysis, using membrane sampling, is described.

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doan, T. C.; Li, J.; Lin, J. Y.

2016-07-15

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick {sup 10}B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors basedmore » on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.« less

Caliste 64: detection unit of a spectro imager array for a hard x-ray space telescope

NASA Astrophysics Data System (ADS)

Limousin, O.; Meuris, A.; Lugiez, F.; Gevin, Olivier; Pinsard, F.; Blondel, C.; Le Mer, I.; Delagnes, E.; Vassal, M. C.; Soufflet, F.; Bocage, R.; Penquer, A.; Billot, M.

2017-11-01

In the frame of the hard X-ray Simbol-X observatory, a joint CNES-ASI space mission to be flown in 2014, a prototype of miniature Cd(Zn)Te camera equipped with 64 pixels has been designed. The device, called Caliste 64, is a spectro-imager with high resolution event timetagging capability. Caliste 64 integrates a Cd(Zn)Te semiconductor detector with segmented electrode and its front-end electronics made of 64 independent analog readout channels. This 1 × 1 × 2 cm3 camera, able to detect photons in the range from 2 keV up to 250 keV, is an elementary detection unit juxtaposable on its four sides. Consequently, large detector array can be made assembling a mosaic of Caliste 64 units. Electronics readout module is achieved by stacking four IDeF-X V1.1 ASICs, perpendicular to the detection plane. We achieved good noise performances, with a mean Equivalent Noise Charge of 65 electrons rms over the 64 channels. For the first prototypes, we chose Pt//CdTe//Al/Ti/Au Schottky detectors because of their very low dark current and excellent spectroscopic performances. Recently a Caliste 64 prototype has been also equipped with a 2 mm thick Au//CdZnTe//Au detector. This paper presents the performances of these four prototypes and demonstrates spectral performances better than 1 keV fwhm at 59.54 keV when the samples are moderately cooled down to -10°C.

14C autoradiography with an energy-sensitive silicon pixel detector.

PubMed

Esposito, M; Mettivier, G; Russo, P

2011-04-07

The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

SPIDER: Next Generation Chip Scale Imaging Sensor Update

NASA Astrophysics Data System (ADS)

Duncan, A.; Kendrick, R.; Ogden, C.; Wuchenich, D.; Thurman, S.; Su, T.; Lai, W.; Chun, J.; Li, S.; Liu, G.; Yoo, S. J. B.

2016-09-01

The Lockheed Martin Advanced Technology Center (LM ATC) and the University of California at Davis (UC Davis) are developing an electro-optical (EO) imaging sensor called SPIDER (Segmented Planar Imaging Detector for Electro-optical Reconnaissance) that seeks to provide a 10x to 100x size, weight, and power (SWaP) reduction alternative to the traditional bulky optical telescope and focal-plane detector array. The substantial reductions in SWaP would reduce cost and/or provide higher resolution by enabling a larger-aperture imager in a constrained volume. Our SPIDER imager replaces the traditional optical telescope and digital focal plane detector array with a densely packed interferometer array based on emerging photonic integrated circuit (PIC) technologies that samples the object being imaged in the Fourier domain (i.e., spatial frequency domain), and then reconstructs an image. Our approach replaces the large optics and structures required by a conventional telescope with PICs that are accommodated by standard lithographic fabrication techniques (e.g., complementary metal-oxide-semiconductor (CMOS) fabrication). The standard EO payload integration and test process that involves precision alignment and test of optical components to form a diffraction limited telescope is, therefore, replaced by in-process integration and test as part of the PIC fabrication, which substantially reduces associated schedule and cost. This paper provides an overview of performance data on the second-generation PIC for SPIDER developed under the Defense Advanced Research Projects Agency (DARPA)'s SPIDER Zoom research funding. We also update the design description of the SPIDER Zoom imaging sensor and the second-generation PIC (high- and low resolution versions).

Testbed Experiment for SPIDER: A Photonic Integrated Circuit-based Interferometric imaging system

NASA Astrophysics Data System (ADS)

Badham, K.; Duncan, A.; Kendrick, R. L.; Wuchenich, D.; Ogden, C.; Chriqui, G.; Thurman, S. T.; Su, T.; Lai, W.; Chun, J.; Li, S.; Liu, G.; Yoo, S. J. B.

The Lockheed Martin Advanced Technology Center (LM ATC) and the University of California at Davis (UC Davis) are developing an electro-optical (EO) imaging sensor called SPIDER (Segmented Planar Imaging Detector for Electro-optical Reconnaissance) that seeks to provide a 10x to 100x size, weight, and power (SWaP) reduction alternative to the traditional bulky optical telescope and focal-plane detector array. The substantial reductions in SWaP would reduce cost and/or provide higher resolution by enabling a larger-aperture imager in a constrained volume. Our SPIDER imager replaces the traditional optical telescope and digital focal plane detector array with a densely packed interferometer array based on emerging photonic integrated circuit (PIC) technologies that samples the object being imaged in the Fourier domain (i.e., spatial frequency domain), and then reconstructs an image. Our approach replaces the large optics and structures required by a conventional telescope with PICs that are accommodated by standard lithographic fabrication techniques (e.g., complementary metal-oxide-semiconductor (CMOS) fabrication). The standard EO payload integration and test process that involves precision alignment and test of optical components to form a diffraction limited telescope is, therefore, replaced by in-process integration and test as part of the PIC fabrication, which substantially reduces associated schedule and cost. In this paper we describe the photonic integrated circuit design and the testbed used to create the first images of extended scenes. We summarize the image reconstruction steps and present the final images. We also describe our next generation PIC design for a larger (16x area, 4x field of view) image.

Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples

DTIC Science & Technology

2015-11-13

P Wijewarnasuriya at the Army Research Lab to understand the bandd offsets of HgCdTe infrared detector structures. Especially when a sample is not...Final Report: Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples Report Title A used calibrated...structures i. G15-38 and G15-38 Quantum Dot ---------------------------- 16 Infrared Detector Samples ii. GSU13-MPD-GB1 Heterostructure

Photocapacitive MIS infrared detectors

NASA Technical Reports Server (NTRS)

Sher, A.; Lu, S. S.-M.; Moriarty, J. A.; Crouch, R. K.; Miller, W. E.

1978-01-01

A new class of room-temperature infrared detectors has been developed through use of metal-insulator-semiconductor (MIS) or metal-insulator-semiconductor-insulator-metal (MISIM) slabs. The detectors, which have been fabricated from Si, Ge and GaAs, rely for operation on the electrical capacitance variations induced by modulated incident radiation. The peak detectivity for a 1000-A Si MISIM detector is comparable to that of a conventional Si detector functioning in the photovoltaic mode. Optimization of the photocapacitive-mode detection sensitivity is discussed.

Arrays of Nano Tunnel Junctions as Infrared Image Sensors

NASA Technical Reports Server (NTRS)

Son, Kyung-Ah; Moon, Jeong S.; Prokopuk, Nicholas

2006-01-01

Infrared image sensors based on high density rectangular planar arrays of nano tunnel junctions have been proposed. These sensors would differ fundamentally from prior infrared sensors based, variously, on bolometry or conventional semiconductor photodetection. Infrared image sensors based on conventional semiconductor photodetection must typically be cooled to cryogenic temperatures to reduce noise to acceptably low levels. Some bolometer-type infrared sensors can be operated at room temperature, but they exhibit low detectivities and long response times, which limit their utility. The proposed infrared image sensors could be operated at room temperature without incurring excessive noise, and would exhibit high detectivities and short response times. Other advantages would include low power demand, high resolution, and tailorability of spectral response. Neither bolometers nor conventional semiconductor photodetectors, the basic detector units as proposed would partly resemble rectennas. Nanometer-scale tunnel junctions would be created by crossing of nanowires with quantum-mechanical-barrier layers in the form of thin layers of electrically insulating material between them (see figure). A microscopic dipole antenna sized and shaped to respond maximally in the infrared wavelength range that one seeks to detect would be formed integrally with the nanowires at each junction. An incident signal in that wavelength range would become coupled into the antenna and, through the antenna, to the junction. At the junction, the flow of electrons between the crossing wires would be dominated by quantum-mechanical tunneling rather than thermionic emission. Relative to thermionic emission, quantum mechanical tunneling is a fast process.

New Technology CZT Detectors for High-Energy Flare Spectroscopy: The Room Temperature Semiconductor Spectrometer for JAWSAT

NASA Technical Reports Server (NTRS)

Vestrand, W. Thomas

1999-01-01

The goal of our Room Temperature Semiconductor Spectrometer (RTeSS) project is to develop a small high-energy solar flare spectrometer employing semiconductor detectors that do not require significant cooling when used as high-energy solar flare spectrometers. Specifically, the goal is to test Cadmium Zinc Telluride (CZT) detectors with coplanar grid electrodes as x-ray and gamma-ray spectrometers and to design an experiment that can be flown as a "piggy-back" payload on a satellite mission during the next solar maximum.

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction.

PubMed

Jeon, Youngeun; Jung, Sungchul; Jin, Hanbyul; Mo, Kyuhyung; Kim, Kyung Rok; Park, Wook-Ki; Han, Seong-Tae; Park, Kibog

2017-12-04

Terahertz (THz) detectors have been extensively studied for various applications such as security, wireless communication, and medical imaging. In case of metal-insulator-metal (MIM) tunnel junction THz detector, a small junction area is desirable because the detector response time can be shortened by reducing it. An edge metal-semiconductor-metal (EMSM) junction has been developed with a small junction area controlled precisely by the thicknesses of metal and semiconductor films. The voltage response of the EMSM THz detector shows the clear dependence on the polarization angle of incident THz wave and the responsivity is found to be very high (~2,169 V/W) at 0.4 THz without any antenna and signal amplifier. The EMSM junction structure can be a new and efficient way of fabricating the nonlinear device THz detector with high cut-off frequency relying on extremely small junction area.

A front-end electronic system for large arrays of bolometers

NASA Astrophysics Data System (ADS)

Arnaboldi, C.; Carniti, P.; Cassina, L.; Gotti, C.; Liu, X.; Maino, M.; Pessina, G.; Rosenfeld, C.; Zhu, B. X.

2018-02-01

CUORE is an array of thermal calorimeters composed of 988 crystals held at about 10 mK, whose absorbed energy is read out with semiconductor thermistors. The composition of the crystal is TeO2, and the aim is the study of the double beta decay of 130Te on very long and stable runs. CUPID-0 is an array of 26 Zn82Se crystals with double thermistor readout to study the double beta decay of 82Se. In the present paper, we present an overview of the entire front-end electronic readout chain, from the preamplifier to the anti-aliasing filter. This overview includes motivations, design strategies, circuit implementation and performance results of the electronic system, including other auxiliary yet important elements like power supplies and the slow control communication system. The stringent requirements of stability on the very long experimental runs that are foreseen during CUORE and CUPID-0 operation, are achieved thanks to novel solutions of the front-end preamplifier and of the detector bias circuit setup.

Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

DOEpatents

Li, Zheng; Chen, Wei

2016-07-05

A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

Simulated Performances of a Very High Energy Tomograph for Non-Destructive Characterization of large objects

NASA Astrophysics Data System (ADS)

Kistler, Marc; Estre, Nicolas; Merle, Elsa

2018-01-01

As part of its R&D activities on high-energy X-ray imaging for non-destructive characterization, the Nuclear Measurement Laboratory has started an upgrade of its imaging system currently implemented at the CEA-Cadarache center. The goals are to achieve a sub-millimeter spatial resolution and the ability to perform tomographies on very large objects (more than 100-cm standard concrete or 40-cm steel). This paper presentsresults on the detection part of the imaging system. The upgrade of the detection part needs a thorough study of the performance of two detectors: a series of CdTe semiconductor sensors and two arrays of segmented CdWO4 scintillators with different pixel sizes. This study consists in a Quantum Accounting Diagram (QAD) analysis coupled with Monte-Carlo simulations. The scintillator arrays are able to detect millimeter details through 140 cm of concrete, but are limited to 120 cm for smaller ones. CdTe sensors have lower but more stable performance, with a 0.5 mm resolution for 90 cm of concrete. The choice of the detector then depends on the preferred characteristic: the spatial resolution or the use on large volumes. The combination of the features of the source and the studies on the detectors gives the expected performance of the whole equipment, in terms of signal-over-noise ratio (SNR), spatial resolution and acquisition time.

Multi-channel infrared thermometer

DOEpatents

Ulrickson, Michael A.

1986-01-01

A device for measuring the two-dimensional temperature profile of a surface comprises imaging optics for generating an image of the light radiating from the surface; an infrared detector array having a plurality of detectors; and a light pipe array positioned between the imaging optics and the detector array for sampling, transmitting, and distributing the image over the detector surfaces. The light pipe array includes one light pipe for each detector in the detector array.

A Highly Sensitive Multi-Element HgCdTe E-APD Detector for IPDA Lidar Applications

NASA Technical Reports Server (NTRS)

Beck, Jeff; Welch, Terry; Mitra, Pradip; Reiff, Kirk; Sun, Xiaoli; Abshire, James

2014-01-01

An HgCdTe electron avalanche photodiode (e-APD) detector has been developed for lidar receivers, one application of which is integrated path differential absorption lidar measurements of such atmospheric trace gases as CO2 and CH4. The HgCdTe APD has a wide, visible to mid-wave-infrared, spectral response, high dynamic range, substantially improved sensitivity, and an expected improvement in operational lifetime. A demonstration sensor-chip assembly consisting of a 4.3 lm cutoff HgCdTe 4 9 4 APD detector array with 80 micrometer pitch pixels and a custom complementary metal-oxide-semiconductor readout integrated circuit was developed. For one typical array the APD gain was 654 at 12 V with corresponding gain normalized dark currents ranging from 1.2 fA to 3.2 fA. The 4 9 4 detector system was characterized at 77 K with a 1.55 micrometer wavelength, 1 microsecond wide, laser pulse. The measured unit gain detector photon conversion efficiency was 91.1%. At 11 V bias the mean measured APD gain at 77 K was 307.8 with sigma/mean uniformity of 1.23%. The average, noise-bandwidth normalized, system noise-equivalent power (NEP) was 1.04 fW/Hz(exp 1/2) with a sigma/mean of 3.8%. The measured, electronics-limited, bandwidth of 6.8 MHz was more than adequate for 1 microsecond pulse detection. The system had an NEP (3 MHz) of 0.4 fW/Hz(exp 1/2) at 12 V APD bias and a linear dynamic range close to 1000. A gain-independent quantum-limited SNR of 80% of full theoretical was indicative of a gain-independent excess noise factor very close to 1.0 and the expected APD mode quantum efficiency.

Development of integrated semiconductor optical sensors for functional brain imaging

NASA Astrophysics Data System (ADS)

Lee, Thomas T.

Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications

NASA Astrophysics Data System (ADS)

Flint, J. P.; Martinez, B.; Betz, T. E. M.; Mackenzie, J.; Kumar, F. J.; Burgess, L.

2017-02-01

Cadmium Zinc Telluride (Cd1-xZnxTe or CZT) is a compound semiconductor substrate material that has been used for infrared detector (IR) applications for many years. CZT is a perfect substrate for the epitaxial growth of Mercury Cadmium Telluride (Hg1-xCdxTe or MCT) epitaxial layers and remains the material of choice for many high performance IR detectors and focal plane arrays that are used to detect across wide IR spectral bands. Critical to the fabrication of high performance MCT IR detectors is a high quality starting CZT substrate, this being a key determinant of epitaxial layer crystallinity, defectivity and ultimately device electro-optical performance. In this work we report on a new source of substrates suitable for IR detector applications, grown using the Travelling Heater Method (THM). This proven method of crystal growth has been used to manufacture high quality IR specification CZT substrates where industry requirements for IR transmission, dislocations, tellurium precipitates and copper impurity levels have been met. Results will be presented for the chemo-mechanical (CMP) polishing of CZT substrates using production tool sets that are identical to those that are used to produce epitaxy-ready surface finishes on related IR compound semiconductor materials such as GaSb and InSb. We will also discuss the requirements to scale CZT substrate manufacture and how with a new III-V like approach to both CZT crystal growth and substrate polishing, we can move towards a more standardized product and one that can ultimately deliver a standard round CZT substrate, as is the case for competing IR materials such as GaSb, InSb and InP.

Review of an assortment of IR materials-devices technologies used for imaging in spectral bands ranging from the visible to very long wavelengths

NASA Astrophysics Data System (ADS)

DeWames, Roger E.

2016-05-01

In this paper we review the intrinsic and extrinsic technological properties of the incumbent technology, InP/In0.53Ga0.47As/InP, for imaging in the visible- short wavelength spectral band, InSb and HgCdTe for imaging in the mid-wavelength spectral band and HgCdTe for imaging in the long wavelength spectral band. These material systems are in use for a wide range of applications addressing compelling needs in night vision imaging, low light level astronomical applications and defense strategic satellite sensing. These materials systems are direct band gap energy semiconductors hence the internal quantum efficiency η, is near unity over a wide spectral band pass. A key system figure of merit of a shot noise limited detector technology is given by the equation (1+Jdark. /Jphoton), where Jdark is the dark current density and Jphoton ~qηΦ is the photocurrent density; Φ is the photon flux incident on the detector and q is the electronic charge. The capability to maintain this factor for a specific spectral band close to unity for low illumination conditions and low temperature onset of non-ideal dark current components, basically intrinsic diffusion limited performance all the way, is a marker of quality and versatility of a semiconductor detector technology. It also enables the highest temperature of operation for tactical illumination conditions. A purpose of the work reported in this paper is to explore the focal plane array data sets of photodiode detector technologies widely used to bench mark their fundamental and technology properties and identify paths for improvements.

Stressed detector arrays for airborne astronomy

NASA Technical Reports Server (NTRS)

Stacey, G. J.; Beeman, J. W.; Haller, E. E.; Geis, N.; Poglitsch, A.; Rumitz, M.

1989-01-01

The development of stressed Ge:Ga detector arrays for far-infrared astronomy from the Kuiper Airborne Observatory (KAO) is discussed. Researchers successfully constructed and used a three channel detector array on five flights from the KAO, and have conducted laboratory tests of a two-dimensional, 25 elements (5x5) detector array. Each element of the three element array performs as well as the researchers' best single channel detector, as do the tested elements of the 25 channel system. Some of the exciting new science possible with far-infrared detector arrays is also discussed.

Geometrical optics, electrostatics, and nanophotonic resonances in absorbing nanowire arrays.

PubMed

Anttu, Nicklas

2013-03-01

Semiconductor nanowire arrays have shown promise for next-generation photovoltaics and photodetection, but enhanced understanding of the light-nanowire interaction is still needed. Here, we study theoretically the absorption of light in an array of vertical InP nanowires by moving continuously, first from the electrostatic limit to the nanophotonic regime and then to the geometrical optics limit. We show how the absorption per volume of semiconductor material in the array can be varied by a factor of 200, ranging from 10 times weaker to 20 times stronger than in a bulk semiconductor sample.

BNLs Synchrotron-radiation Research Hub for Characterizing Detection Materials and Devices for the NA-22 Community

DOE Office of Scientific and Technical Information (OSTI.GOV)

Camarda, G. S.; Bolotnikov, A. E.; Cui, Y.

The goal of this project is to obtain and characterize scintillators, emerging- and commercial-compoundsemiconductor radiation- detection materials and devices provided by vendors and research organizations. The focus of our proposed research is to clarify the role of the deleterious defects and impurities responsible for the detectors' non-uniformity in scintillating crystals, commercial semiconductor radiation-detector materials, and in emerging R&D ones. Some benefits of this project addresses the need for fabricating high-performance scintillators and compound-semiconductor radiation-detectors with the proven potential for large-scale manufacturing. The findings help researchers to resolve the problems of non-uniformities in scintillating crystals, commercial semiconductor radiation-detector materials, and inmore » emerging R&D ones.« less

Batch-processed semiconductor gas sensor array for the selective detection of NOx in automotive exhaust gas

NASA Astrophysics Data System (ADS)

Jang, Hani; Kim, Minki; Kim, Yongjun

2016-12-01

This paper reports on a semiconductor gas sensor array to detect nitrogen oxides (NOx) in automotive exhaust gas. The proposed semiconductor gas sensor array consisted of one common electrode and three individual electrodes to minimize the size of the sensor array, and three sensing layers [TiO2 + SnO2 (15 wt%), SnO2, and Ga2O3] were deposited using screen printing. In addition, sensing materials were sintered under the same conditions in order to take advantage of batch processing. The sensing properties of the proposed sensor array were verified by experimental measurements, and the selectivity improved by using pattern recognition.

Characteristics of a p-Si detector in high energy electron fields.

PubMed

Rikner, G

1985-01-01

Comparison of depth ionization distributions from a silicon semiconductor detector and depth dose curves from a plane parallel ionization chamber show that a semiconductor detector of p-type is well suited for relative electron dosimetry in the energy range of 6 to 20 MeV in Ep,0. Maximum deviations of the order of 1.5 per cent and of 1 mm were obtained down to a phantom depth of about 1 mm. The directional dependence of the detector was about 4 per cent.

SiPM detectors for the ASTRI project in the framework of the Cherenkov Telescope Array

NASA Astrophysics Data System (ADS)

Billotta, Sergio; Marano, Davide; Bonanno, Giovanni; Belluso, Massimiliano; Grillo, Alessandro; Garozzo, Salvatore; Romeo, Giuseppe; Timpanaro, Maria Cristina; Maccarone, Maria Concetta C.; Catalano, Osvaldo; La Rosa, Giovanni; Sottile, Giuseppe; Impiombato, Domenico; Gargano, Carmelo; Giarrusso, Salavtore

2014-07-01

The Cherenkov Telescope Array (CTA) is a worldwide new generation project aimed at realizing an array of a hundred ground based gamma-ray telescopes. ASTRI (Astrofisica con Specchi a Tecnologia Replicante Italiana) is the Italian project whose primary target is the development of an end-to-end prototype, named ASTRI SST-2M, of the CTA small size class of telescopes devoted to investigation of the highest energy region, from 1 to 100 TeV. Next target is the implementation of an ASTRI/CTA mini-array based on seven identical telescopes. Silicon Photo-Multipliers (SiPMs) are the semiconductor photosensor devices designated to constitute the camera detection system at the focal plane of the ASTRI telescopes. SiPM photosensors are suitable for the detection of the Cherenkov flashes, since they are very fast and sensitive to the light in the 300-700nm wavelength spectrum. Their drawbacks compared to the traditional photomultiplier tubes are high dark count rates, after-pulsing and optical cross-talk contributions, and intrinsic gains strongly dependent on temperature. Nonetheless, for a single pixel, the dark count rate is well below the Night Sky Background, the effects of cross-talk and afterpulses are typically lower than 20%, and the gain can be kept stable against temperature variations by means of adequate bias voltage compensation strategies. This work presents and discusses some experimental results from a large set of measurements performed on the SiPM sensors to be used for the ASTRI SST-2M prototype camera and on recently developed detectors demonstrating outstanding performance for the future evolution of the project in the ASTRI/CTA mini-array.

Evaluation of linear array MOSFET detectors for in vivo dosimetry to measure rectal dose in HDR brachytherapy.

PubMed

Haughey, Aisling; Coalter, George; Mugabe, Koki

2011-09-01

The study aimed to assess the suitability of linear array metal oxide semiconductor field effect transistor detectors (MOSFETs) as in vivo dosimeters to measure rectal dose in high dose rate brachytherapy treatments. The MOSFET arrays were calibrated with an Ir192 source and phantom measurements were performed to check agreement with the treatment planning system. The angular dependence, linearity and constancy of the detectors were evaluated. For in vivo measurements two sites were investigated, transperineal needle implants for prostate cancer and Fletcher suites for cervical cancer. The MOSFETs were inserted into the patients' rectum in theatre inside a modified flatus tube. The patients were then CT scanned for treatment planning. Measured rectal doses during treatment were compared with point dose measurements predicted by the TPS. The MOSFETs were found to require individual calibration factors. The calibration was found to drift by approximately 1% ±0.8 per 500 mV accumulated and varies with distance from source due to energy dependence. In vivo results for prostate patients found only 33% of measured doses agreed with the TPS within ±10%. For cervix cases 42% of measured doses agreed with the TPS within ±10%, however of those not agreeing variations of up to 70% were observed. One of the most limiting factors in this study was found to be the inability to prevent the MOSFET moving internally between the time of CT and treatment. Due to the many uncertainties associated with MOSFETs including calibration drift, angular dependence and the inability to know their exact position at the time of treatment, we consider them to be unsuitable for in vivo dosimetry in rectum for HDR brachytherapy.

Proximity charge sensing for semiconductor detectors

DOEpatents

Luke, Paul N; Tindall, Craig S; Amman, Mark

2013-10-08

A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors

DOE PAGES

Wolf, Omri; Campione, Salvatore; Kim, Jin; ...

2016-01-01

Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in amore » focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. Lastly, we further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors.« less

Semiconductor crystal high resolution imager

NASA Technical Reports Server (NTRS)

Matteson, James (Inventor); Levin, Craig S. (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Integrated infrared detector arrays for low-background applications

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Goebel, J. H.

1982-01-01

Advanced infrared detector and detector array technology is being developed and characterized for future NASA space astronomy applications. Si:Bi charge-injection-device arrays have been obtained, and low-background sensitivities comparable to that of good discrete detectors have been measured. Intrinsic arrays are being assessed, and laboratory and telescope data have been collected on a monolithic InSb CCD array. For wavelengths longer than 30 microns, improved Ge:Ga detectors have been produced, and steps have been taken to prove the feasibility of an integrated extrinsic germanium array. Other integrated arrays and cryogenic components are also under investigation.

Nanopillar arrays on semiconductor membranes as electron emission amplifiers.

PubMed

Qin, Hua; Kim, Hyun-Seok; Blick, Robert H

2008-03-05

A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one-dimensional (1D) silicon nanopillars onto a two-dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane (NPM) system from the flat surface of the membrane, while electron emission from the nanopillars is probed by an anode. The secondary electron yield (SEY) from the nanopillars in the current device is found to be about 1.8 times that of the plain silicon membrane. This gain in electron number is slightly enhanced by the electric field applied from the anode. Further optimization of the dimensions of the NPM and an application of field emission promise an even higher gain for detector applications and allow for probing of electronic/mechanical excitations in an NPM system stimulated by incident particles or radiation.

Experimental demonstration of a multi-wavelength distributed feedback semiconductor laser array with an equivalent chirped grating profile based on the equivalent chirp technology.

PubMed

Li, Wangzhe; Zhang, Xia; Yao, Jianping

2013-08-26

We report, to the best of our knowledge, the first realization of a multi-wavelength distributed feedback (DFB) semiconductor laser array with an equivalent chirped grating profile based on equivalent chirp technology. All the lasers in the laser array have an identical grating period with an equivalent chirped grating structure, which are realized by nonuniform sampling of the gratings. Different wavelengths are achieved by changing the sampling functions. A multi-wavelength DFB semiconductor laser array is fabricated and the lasing performance is evaluated. The results show that the equivalent chirp technology is an effective solution for monolithic integration of a multi-wavelength laser array with potential for large volume fabrication.

Towards time-of-flight PET with a semiconductor detector.

PubMed

Ariño-Estrada, Gerard; Mitchell, Gregory S; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J; Shah, Kanai S; Cherry, Simon R

2018-02-16

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

Towards time-of-flight PET with a semiconductor detector

NASA Astrophysics Data System (ADS)

Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

2018-02-01

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

CMOS array design automation techniques. [metal oxide semiconductors

NASA Technical Reports Server (NTRS)

Ramondetta, P.; Feller, A.; Noto, R.; Lombardi, T.

1975-01-01

A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed.

Sensor Modelling for the ’Cyclops’ Focal Plane Detector Array Based Technology Demonstrator

DTIC Science & Technology

1992-12-01

Detector Array IFOV Instantaneous field of view IRFPDA Infrared Focal Plane Detector Array LWIR Long-Wave Infrared 0 MCT Mercury Cadmium Telluride MTF...scale focal plane detector array (FPDA). The sensor system operates in the long-wave infrared ( LWIR ) spectral region. The detector array consists of...charge transfer inefficiencies in the readout circuitry. The performance of the HgCdTe FPDA based sensor is limited by the nonuniformity of the

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

NASA Technical Reports Server (NTRS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio M.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty;

Mechanical designs and development of TES bolometer detector arrays for the Advanced ACTPol experiment

NASA Astrophysics Data System (ADS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty; Hilton, Gene; Hubmayr, Johannes; Khavari, Niloufar; Klein, Jeffrey; Koopman, Brian J.; Li, Dale; McMahon, Jeffrey; Mumby, Grace; Nati, Federico; Niemack, Michael D.; Page, Lyman A.; Salatino, Maria; Schillaci, Alessandro; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Thornton, Robert; Ullom, Joel N.; Vavagiakis, Eve M.; Wollack, Edward J.

2016-07-01

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline profile leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

Multi-channel infrared thermometer

DOEpatents

Ulrickson, M.A.

A device for measuring the two-dimensional temperature profile of a surface comprises imaging optics for generating an image of the light radiating from the surface; an infrared detector array having a plurality of detectors; and optical means positioned between the imaging optics and the detector array for sampling, transmitting, and distributing the image over the detector surfaces. The optical means may be a light pipe array having one light pipe for each detector in the detector array.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Directional Sensitivity in Light-Mass Dark Matter Searches with Single-Electron-Resolution Ionization Detectors

NASA Astrophysics Data System (ADS)

Kadribasic, Fedja; Mirabolfathi, Nader; Nordlund, Kai; Sand, Andrea E.; Holmström, Eero; Djurabekova, Flyura

2018-03-01

We propose a method using solid state detectors with directional sensitivity to dark matter interactions to detect low-mass weakly interacting massive particles (WIMPs) originating from galactic sources. In spite of a large body of literature for high-mass WIMP detectors with directional sensitivity, no available technique exists to cover WIMPs in the mass range <1 GeV /c2 . We argue that single-electron-resolution semiconductor detectors allow for directional sensitivity once properly calibrated. We examine the commonly used semiconductor material response to these low-mass WIMP interactions.

Modeling and analysis of hybrid pixel detector deficiencies for scientific applications

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

System to quantify gamma-ray radial energy deposition in semiconductor detectors

DOEpatents

Kammeraad, Judith E.; Blair, Jerome J.

2001-01-01

A system for measuring gamma-ray radial energy deposition is provided for use in conjunction with a semiconductor detector. The detector comprises two electrodes and a detector material, and defines a plurality of zones within the detecting material in parallel with the two electrodes. The detector produces a charge signal E(t) when a gamma-ray interacts with the detector. Digitizing means are provided for converting the charge signal E(t) into a digitized signal. A computational means receives the digitized signal and calculates in which of the plurality of zones the gamma-ray deposited energy when interacting with the detector. The computational means produces an output indicating the amount of energy deposited by the gamma-ray in each of the plurality of zones.

GaTe semiconductor for radiation detection

DOEpatents

Payne, Stephen A [Castro Valley, CA; Burger, Arnold [Nashville, TN; Mandal, Krishna C [Ashland, MA

2009-06-23

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Radiation detection system using semiconductor detector with differential carrier trapping and mobility

DOEpatents

Whited, Richard C.

1981-01-01

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

A prototype small CdTe gamma camera for radioguided surgery and other imaging applications.

PubMed

Tsuchimochi, Makoto; Sakahara, Harumi; Hayama, Kazuhide; Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi; Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar

2003-12-01

Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mmx166 mmx65 mm. The effective visual field was 44.8 mmx44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV (99mTc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56 +/- 0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and facilitating subsequent radioguided surgery.

Novel Drift Structures for Silicon and Compound Semiconductor X-Ray and Gamma-Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley E. Patt; Jan S. Iwanczyk

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that we discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current (both bulk silicon dark current and surface dark current) and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector.

Characterization of CdTe and (CdZn)Te detectors with different metal contacts

NASA Astrophysics Data System (ADS)

Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

2013-09-01

In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

NASA Astrophysics Data System (ADS)

Samedov, V. V.

2017-12-01

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

In vivo dosimetry using a linear Mosfet-array dosimeter to determine the urethra dose in 125I permanent prostate implants.

PubMed

Bloemen-van Gurp, Esther J; Murrer, Lars H P; Haanstra, Björk K C; van Gils, Francis C J M; Dekker, Andre L A J; Mijnheer, Ben J; Lambin, Philippe

2009-01-01

In vivo dosimetry during brachytherapy of the prostate with (125)I seeds is challenging because of the high dose gradients and low photon energies involved. We present the results of a study using metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters to evaluate the dose in the urethra after a permanent prostate implantation procedure. Phantom measurements were made to validate the measurement technique, determine the measurement accuracy, and define action levels for clinical measurements. Patient measurements were performed with a MOSFET array in the urinary catheter immediately after the implantation procedure. A CT scan was performed, and dose values, calculated by the treatment planning system, were compared to in vivo dose values measured with MOSFET dosimeters. Corrections for temperature dependence of the MOSFET array response and photon attenuation in the catheter on the in vivo dose values are necessary. The overall uncertainty in the measurement procedure, determined in a simulation experiment, is 8.0% (1 SD). In vivo dose values were obtained for 17 patients. In the high-dose region (> 100 Gy), calculated and measured dose values agreed within 1.7% +/- 10.7% (1 SD). In the low-dose region outside the prostate (< 100 Gy), larger deviations occurred. MOSFET detectors are suitable for in vivo dosimetry during (125)I brachytherapy of prostate cancer. An action level of +/- 16% (2 SD) for detection of errors in the implantation procedure is achievable after validation of the detector system and measurement conditions.

High-quality 3D correction of ring and radiant artifacts in flat panel detector-based cone beam volume CT imaging

NASA Astrophysics Data System (ADS)

Abu Anas, Emran Mohammad; Kim, Jae Gon; Lee, Soo Yeol; Kamrul Hasan, Md

2011-10-01

The use of an x-ray flat panel detector is increasingly becoming popular in 3D cone beam volume CT machines. Due to the deficient semiconductor array manufacturing process, the cone beam projection data are often corrupted by different types of abnormalities, which cause severe ring and radiant artifacts in a cone beam reconstruction image, and as a result, the diagnostic image quality is degraded. In this paper, a novel technique is presented for the correction of error in the 2D cone beam projections due to abnormalities often observed in 2D x-ray flat panel detectors. Template images are derived from the responses of the detector pixels using their statistical properties and then an effective non-causal derivative-based detection algorithm in 2D space is presented for the detection of defective and mis-calibrated detector elements separately. An image inpainting-based 3D correction scheme is proposed for the estimation of responses of defective detector elements, and the responses of the mis-calibrated detector elements are corrected using the normalization technique. For real-time implementation, a simplification of the proposed off-line method is also suggested. Finally, the proposed algorithms are tested using different real cone beam volume CT images and the experimental results demonstrate that the proposed methods can effectively remove ring and radiant artifacts from cone beam volume CT images compared to other reported techniques in the literature.

Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography.

PubMed

Elbakri, I A; McIntosh, B J; Rickey, D W

2009-03-21

We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 microm detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result.

Development and characterization of semiconductor ion detectors for plasma diagnostics in the range over 0.3 keV

NASA Astrophysics Data System (ADS)

Cho, T.; Sakamoto, Y.; Hirata, M.; Kohagura, J.; Makino, K.; Kanke, S.; Takahashi, K.; Okamura, T.; Nakashima, Y.; Yatsu, K.; Tamano, T.; Miyoshi, S.

1997-01-01

For the purpose of plasma-ion-energy analyses in a wide-energy range from a few hundred eV to hundreds of keV, upgraded semiconductor detectors are newly fabricated and characterized using a test-ion-beam line from 0.3 to 12 keV. In particular, the detectable lowest-ion energy is drastically improved at least down to 0.3 keV; this energy is one to two orders-of-magnitude better than those for commercially available Si-surface-barrier diodes employed for previous plasma-ion diagnostics. A signal-to-noise ratio of two to three orders-of-magnitude better than that for usual metal-collector detectors is demonstrated for the compact-sized semiconductor along with the availability of the use under conditions of a good vacuum and a strong-magnetic field. Such characteristics are achieved due to the improving methods of the optimization of the thicknesses of a Si dead layer and a SiO2 layer, as well as the nitrogen-doping technique near the depletion layer along with minimizing impurity concentrations in Si. Such an upgraded capability of an extremely low-energy-ion detection with the low-noise characteristics enlarges research regimes of plasma-ion behavior using semiconductor detectors not only in the divertor regions of tokamaks but in wider spectra of open-field plasma devices including tandem mirrors. An application of the semiconductor ion detector for plasma-ion diagnostics is demonstrated in a specially designed ion-spectrometer structure.

Semiconductor Radiation Detectors: Basic principles and some uses of a recent tool that has revolutionized nuclear physics are described.

PubMed

Goulding, F S; Stone, Y

1970-10-16

The past decade has seen the rapid development and exploitation of one of the most significant tools of nuclear physics, the semiconductor radiation detector. Applications of the device to the analysis of materials promises to be one of the major contributions of nuclear research to technology, and may even assist in some aspects of our environmental problems. In parallel with the development of these applications, further developments in detectors for nuclear research are taking place: the use of very thin detectors for heavyion identification, position-sensitive detectors for nuclear-reaction studies, and very pure germanium for making more satisfactory detectors for many applications suggest major future contributions to physics.

A low-power CMOS trans-impedance amplifier for FM/cw ladar imaging system

NASA Astrophysics Data System (ADS)

Hu, Kai; Zhao, Yi-qiang; Sheng, Yun; Zhao, Hong-liang; Yu, Hai-xia

2013-09-01

A scannerless ladar imaging system based on a unique frequency modulation/continuous wave (FM/cw) technique is able to entirely capture the target environment, using a focal plane array to construct a 3D picture of the target. This paper presents a low power trans-impedance amplifier (TIA) designed and implemented by 0.18 μm CMOS technology, which is used in the FM/cw imaging ladar with a 64×64 metal-semiconductor-metal(MSM) self-mixing detector array. The input stage of the operational amplifier (op amp) in TIA is realized with folded cascade structure to achieve large open loop gain and low offset. The simulation and test results of TIA with MSM detectors indicate that the single-end trans-impedance gain is beyond 100 kΩ, and the -3 dB bandwidth of Op Amp is beyond 60 MHz. The input common mode voltage ranges from 0.2 V to 1.5 V, and the power dissipation is reduced to 1.8 mW with a supply voltage of 3.3 V. The performance test results show that the TIA is a candidate for preamplifier of the read-out integrated circuit (ROIC) in the FM/cw scannerless ladar imaging system.

Development of a Si-PM based alpha camera for plutonium detection in nuclear fuel facilities

NASA Astrophysics Data System (ADS)

Morishita, Yuki; Yamamoto, Seiichi; Izaki, Kenji; Kaneko, Junichi H.; Toi, Kohei; Tsubota, Youichi

2014-05-01

Alpha particles are monitored for detecting nuclear fuel material (i.e., plutonium and uranium) at nuclear fuel facilities. Currently, for monitoring the airborne contamination of nuclear fuel, only energy information measured by Si-semiconductor detectors is used to distinguish nuclear fuel material from radon daughters. In some cases, however, such distinguishing is difficult when the radon concentration is high. In addition, a Si-semiconductor detector is generally sensitive to noise. In this study, we developed a new alpha-particle imaging system by combining a Si-PM array, which is insensitive to noise, with a Ce-doped Gd3Al2Ga3O12(GAGG) scintillator, and evaluated our developed system's fundamental performance. The scintillator was 0.1-mm thick, and the light guide was 3.0 mm thick. An 241Am source was used for all the measurements. We evaluated the spatial resolution by taking an image of a resolution chart. A 1.6 lp/mm slit was clearly resolved, and the spatial resolution was estimated to be less than 0.6-mm FWHM. The energy resolution was 13% FWHM. A slight distortion was observed in the image, and the uniformity near its center was within ±24%. We conclude that our developed alpha-particle imaging system is promising for plutonium detection at nuclear fuel facilities.

The First Multichroic Polarimeter Array on the Atacama Cosmology Telescope: Characterization and Performance

NASA Technical Reports Server (NTRS)

Ho, S. P.; Pappas, C. G.; Austermann, J.; Beall, J. A.; Becker, D.; Choi, S. K.; Datta, R.; Duff, S. M.; Gallardo, P. A.; Grace, E.;

The First Multichroic Polarimeter Array on the Atacama Cosmology Telescope: Characterization and Performance

NASA Astrophysics Data System (ADS)

Ho, S. P.; Pappas, C. G.; Austermann, J.; Beall, J. A.; Becker, D.; Choi, S. K.; Datta, R.; Duff, S. M.; Gallardo, P. A.; Grace, E.; Hasselfield, M.; Henderson, S. W.; Hilton, G. C.; Hubmayr, J.; Koopman, B. J.; Lanen, J. V.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Niraula, P.; Salatino, M.; Schillaci, A.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Ward, J. T.; Wollack, E. J.; Vavagiakis, E. M.

2016-08-01

The Atacama Cosmology Telescope Polarimeter (ACTPol) is a polarization sensitive receiver for the 6-m Atacama Cosmology Telescope (ACT) and measures the small angular scale polarization anisotropies in the cosmic microwave background (CMB). The full focal plane is composed of three detector arrays, containing over 3000 transition edge sensors (TES detectors) in total. The first two detector arrays, observing at 146 GHz, were deployed in 2013 and 2014, respectively. The third and final array is composed of multichroic pixels sensitive to both 90 and 146 GHz and saw first light in February 2015. Fabricated at NIST, this dichroic array consists of 255 pixels, with a total of 1020 polarization sensitive bolometers and is coupled to the telescope with a monolithic array of broad-band silicon feedhorns. The detectors are read out using time-division SQUID multiplexing and cooled by a dilution refrigerator at 110 mK. We present an overview of the assembly and characterization of this multichroic array in the lab, and the initial detector performance in Chile. The detector array has a TES detector electrical yield of 85 %, a total array sensitivity of less than 10 \\upmu K√{ {s}}, and detector time constants and saturation powers suitable for ACT CMB observations.

Hard X-ray and low-energy gamma-ray spectrometers

NASA Technical Reports Server (NTRS)

Gehrels, N.; Crannell, C. J.; Orwig, L. E.; Forrest, D. J.; Lin, R. P.; Starr, R.

1988-01-01

Basic principles of operation and characteristics of scintillation and semi-conductor detectors used for solar hard X-ray and gamma-ray spectrometers are presented. Scintillation materials such as NaI offer high stopping power for incident gamma rays, modest energy resolution, and relatively simple operation. They are, to date, the most often used detector in solar gamma-ray spectroscopy. The scintillator BGO has higher stopping power than NaI, but poorer energy resolution. The primary advantage of semi-conductor materials such as Ge is their high-energy resolution. Monte-Carlo simulations of the response of NaI and Ge detectors to model solar flare inputs show the benefit of high resoluton for studying spectral lines. No semi-conductor material besides Ge is currently available with adequate combined size and purity to make general-use hard X-ray and gamma-ray detectors for solar studies.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Segmented AC-coupled readout from continuous collection electrodes in semiconductor sensors

DOEpatents

Sadrozinski, Hartmut F. W.; Seiden, Abraham; Cartiglia, Nicolo

2017-04-04

Position sensitive radiation detection is provided using a continuous electrode in a semiconductor radiation detector, as opposed to the conventional use of a segmented electrode. Time constants relating to AC coupling between the continuous electrode and segmented contacts to the electrode are selected to provide position resolution from the resulting configurations. The resulting detectors advantageously have a more uniform electric field than conventional detectors having segmented electrodes, and are expected to have much lower cost of production and of integration with readout electronics.

Fabrication of Pop-up Detector Arrays on Si Wafers

NASA Technical Reports Server (NTRS)

Li, Mary J.; Allen, Christine A.; Gordon, Scott A.; Kuhn, Jonathan L.; Mott, David B.; Stahle, Caroline K.; Wang, Liqin L.

1999-01-01

High sensitivity is a basic requirement for a new generation of thermal detectors. To meet the requirement, close-packed, two-dimensional silicon detector arrays have been developed in NASA Goddard Space Flight Center. The goal of the task is to fabricate detector arrays configured with thermal detectors such as infrared bolometers and x-ray calorimeters to use in space fliGht missions. This paper focuses on the fabrication and the mechanical testing of detector arrays in a 0.2 mm pixel size, the smallest pop-up detectors being developed so far. These array structures, nicknamed "PUDS" for "Pop-Up Detectors", are fabricated on I pm thick, single-crystal, silicon membranes. Their designs have been refined so we can utilize the flexibility of thin silicon films by actually folding the silicon membranes to 90 degrees in order to obtain close-packed two-dimensional arrays. The PUD elements consist of a detector platform and two legs for mechanical support while also serving as electrical and thermal paths. Torsion bars and cantilevers connecting the detector platform to the legs provide additional flexures for strain relief. Using micro-electromechanical structure (MEMS) fabrication techniques, including photolithography, anisotropic chemical etching, reactive-ion etching, and laser dicing, we have fabricated PLTD detector arrays of fourteen designs with a variation of four parameters including cantilever length, torsion bar length and width, and leg length. Folding tests were conducted to test mechanical stress distribution for the array structures. We obtained folding yields and selected optimum design parameters to reach minimal stress levels. Computer simulation was also employed to verify mechanical behaviors of PUDs in the folding process. In addition, scanning electron microscopy was utilized to examine the flatness of detectors and the alignment of detector pixels in arrays. The fabrication of thermistors and heaters on the pop-up detectors is under way, preparing us for the next step of the experiment, the thermal test.

Performance comparison of small-pixel CdZnTe radiation detectors with gold contacts formed by sputter and electroless deposition

NASA Astrophysics Data System (ADS)

Bell, S. J.; Baker, M. A.; Duarte, D. D.; Schneider, A.; Seller, P.; Sellin, P. J.; Veale, M. C.; Wilson, M. D.

2017-06-01

Recent improvements in the growth of wide-bandgap semiconductors, such as cadmium zinc telluride (CdZnTe or CZT), has enabled spectroscopic X/γ-ray imaging detectors to be developed. These detectors have applications covering homeland security, industrial analysis, space science and medical imaging. At the Rutherford Appleton Laboratory (RAL) a promising range of spectroscopic, position sensitive, small-pixel Cd(Zn)Te detectors have been developed. The challenge now is to improve the quality of metal contacts on CdZnTe in order to meet the demanding energy and spatial resolution requirements of these applications. The choice of metal deposition method and fabrication process are of fundamental importance. Presented is a comparison of two CdZnTe detectors with contacts formed by sputter and electroless deposition. The detectors were fabricated with a 74 × 74 array of 200 μm pixels on a 250 μm pitch and bump-bonded to the HEXITEC ASIC. The X/γ-ray emissions from an 241Am source were measured to form energy spectra for comparison. It was found that the detector with contacts formed by electroless deposition produced the best uniformity and energy resolution; the best pixel produced a FWHM of 560 eV at 59.54 keV and 50% of pixels produced a FWHM better than 1.7 keV . This compared with a FWHM of 1.5 keV for the best pixel and 50% of pixels better than 4.4 keV for the detector with sputtered contacts.

AIGO: a southern hemisphere detector for the worldwide array of ground-based interferometric gravitational wave detectors

NASA Astrophysics Data System (ADS)

Barriga, P.; Blair, D. G.; Coward, D.; Davidson, J.; Dumas, J.-C.; Howell, E.; Ju, L.; Wen, L.; Zhao, C.; McClelland, D. E.; Scott, S. M.; Slagmolen, B. J. J.; Inta, R.; Munch, J.; Ottaway, D. J.; Veitch, P.; Hosken, D.; Melatos, A.; Chung, C.; Sammut, L.; Galloway, D. K.; Marx, J.; Whitcomb, S.; Shoemaker, D.; Hughes, S. A.; Reitze, D. H.; Iyer, B. R.; Dhurandhar, S. V.; Souradeep, T.; Unnikrishnan, C. S.; Rajalakshmi, G.; Man, C. N.; Heidmann, A.; Cohadon, P.-F.; Briant, T.; Grote, H.; Danzmann, K.; Lück, H.; Willke, B.; Strain, K. A.; Sathyaprakash, B. S.; Cao, J.; Cheung, Y.-K. E.; Zhang, Y.

2010-04-01

This paper describes the proposed AIGO detector for the worldwide array of interferometric gravitational wave detectors. The first part of the paper summarizes the benefits that AIGO provides to the worldwide array of detectors. The second part gives a technical description of the detector, which will follow closely the Advanced LIGO design. Possible technical variations in the design are discussed.

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

NASA Astrophysics Data System (ADS)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.

Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

PubMed

Ha, Jang Ho; Kim, Han Soo

2013-11-01

The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

Apparatus and method for heterodyne-generated two-dimensional detector array using a single element detector

DOEpatents

Strauss, Charlie E.

1997-01-01

Apparatus and method for heterodyne-generated, two-dimensional detector array using a single detector. Synthetic-array heterodyne detection, permits a single-element optical detector to behave as though it were divided into an array of separate heterodyne detector elements. A fifteen-element synthetic array has successfully been experimentally realized on a single-element detector, permitting all of the array elements to be read out continuously and in parallel from one electrical connection. A CO.sub.2 laser and a single-element HgCdTe photodiode are employed. A different heterodyne local oscillator frequency is incident upon the spatially resolvable regions of the detector surface. Thus, different regions are mapped to different heterodyne beat frequencies. One can determine where the photons were incident on the detector surface even though a single electrical connection to the detector is used. This also prevents the destructive interference that occurs when multiple speckles are imaged (similar to spatial diversity), In coherent LIDAR this permits a larger field of view. An acoustooptic modulator generates the local oscillator frequencies and can achieve adequate spatial separation of optical frequencies of the order of a megahertz apart.

Apparatus and method for heterodyne-generated two-dimensional detector array using a single element detector

DOEpatents

Strauss, C.E.

1997-11-18

Apparatus and method are disclosed for heterodyne-generated, two-dimensional detector array using a single detector. Synthetic-array heterodyne detection, permits a single-element optical detector to behave as though it were divided into an array of separate heterodyne detector elements. A fifteen-element synthetic array has successfully been experimentally realized on a single-element detector, permitting all of the array elements to be read out continuously and in parallel from one electrical connection. A CO{sub 2} laser and a single-element HgCdTe photodiode are employed. A different heterodyne local oscillator frequency is incident upon the spatially resolvable regions of the detector surface. Thus, different regions are mapped to different heterodyne beat frequencies. One can determine where the photons were incident on the detector surface even though a single electrical connection to the detector is used. This also prevents the destructive interference that occurs when multiple speckles are imaged (similar to spatial diversity), In coherent LIDAR this permits a larger field of view. An acoustooptic modulator generates the local oscillator frequencies and can achieve adequate spatial separation of optical frequencies of the order of a megahertz apart. 4 figs.

Thallium bromide radiation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, K.S.; Lund, J.C.; Olschner, F.

1989-02-01

Radiation detectors have been fabricated from crystals of the semiconductor material thallium bromide (TlBr) and the performance of these detectors as room temperature photon spectrometers has been measured. These detectors exhibit improved energy resolution over previously reported TlBr detectors. These results indicate that TlBr is a very promising radiation detector material.

Optical Communications With A Geiger Mode APD Array

DTIC Science & Technology

2016-02-09

spurious fires from numerous sources, including crosstalk from other detectors in the same array . Additionally, after a 9 successful detection, the...be combined into arrays with large numbers of detectors , allowing for scaling of dynamic range with relatively little overhead on space and power...overall higher rate of dark counts than a single detector , this is more than compensated for by the extra detectors . A sufficiently large APD array could

Signal detectability in diffusive media using phased arrays in conjunction with detector arrays.

PubMed

Kang, Dongyel; Kupinski, Matthew A

2011-06-20

We investigate Hotelling observer performance (i.e., signal detectability) of a phased array system for tasks of detecting small inhomogeneities and distinguishing adjacent abnormalities in uniform diffusive media. Unlike conventional phased array systems where a single detector is located on the interface between two sources, we consider a detector array, such as a CCD, on a phantom exit surface for calculating the Hotelling observer detectability. The signal detectability for adjacent small abnormalities (2 mm displacement) for the CCD-based phased array is related to the resolution of reconstructed images. Simulations show that acquiring high-dimensional data from a detector array in a phased array system dramatically improves the detectability for both tasks when compared to conventional single detector measurements, especially at low modulation frequencies. It is also observed in all studied cases that there exists the modulation frequency optimizing CCD-based phased array systems, where detectability for both tasks is consistently high. These results imply that the CCD-based phased array has the potential to achieve high resolution and signal detectability in tomographic diffusive imaging while operating at a very low modulation frequency. The effect of other configuration parameters, such as a detector pixel size, on the observer performance is also discussed.

Far infrared through millimeter backshort-under-grid arrays

NASA Astrophysics Data System (ADS)

Allen, Christine A.; Abrahams, John; Benford, Dominic J.; Chervenak, James A.; Chuss, David T.; Staguhn, Johannes G.; Miller, Timothy M.; Moseley, S. Harvey; Wollack, Edward J.

2006-06-01

We are developing a large-format, versatile, bolometer array for a wide range of infrared through millimeter astronomical applications. The array design consists of three key components - superconducting transition edge sensor bolometer arrays, quarter-wave reflective backshort grids, and Superconducting Quantum Interference Device (SQUID) multiplexer readouts. The detector array is a filled, square grid of bolometers with superconducting sensors. The backshort arrays are fabricated separately and are positioned in the etch cavities behind the detector grid. The grids have unique three-dimensional interlocking features micromachined into the walls for positioning and mechanical stability. The ultimate goal of the program is to produce large-format arrays with background-limited sensitivity, suitable for a wide range of wavelengths and applications. Large-format (kilopixel) arrays will be directly indium bump bonded to a SQUID multiplexer circuit. We have produced and tested 8×8 arrays of 1 mm detectors to demonstrate proof of concept. 8×16 arrays of 2 mm detectors are being produced for a new Goddard Space Flight Center instrument. We have also produced models of a kilopixel detector grid and dummy multiplexer chip for bump bonding development. We present detector design overview, several unique fabrication highlights, and assembly technologies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long.more » A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks. In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.« less

Thermopile Detector Arrays for Space Science Applications

NASA Technical Reports Server (NTRS)

Foote, M. C.; Kenyon, M.; Krueger, T. R.; McCann, T. A.; Chacon, R.; Jones, E. W.; Dickie, M. R.; Schofield, J. T.; McCleese, D. J.; Gaalema, S.

2004-01-01

Thermopile detectors are widely used in uncooled applications where small numbers of detectors are required, particularly in low-cost commercial applications or applications requiring accurate radiometry. Arrays of thermopile detectors, however, have not been developed to the extent of uncooled bolometer and pyroelectric/ferroelectric arrays. Efforts at JPL seek to remedy this deficiency by developing high performance thin-film thermopile detectors in both linear and two-dimensional formats. The linear thermopile arrays are produced by bulk micromachining and wire bonded to separate CMOS readout electronic chips. Such arrays are currently being fabricated for the Mars Climate Sounder instrument, scheduled for launch in 2005. Progress is also described towards realizing a two-dimensional thermopile array built over CMOS readout circuitry in the substrate.

Large Format, Background Limited Arrays of Kinetic Inductance Detectors for Sub-mm Astronomy

NASA Astrophysics Data System (ADS)

Baselmans, Jochem

2018-01-01

We present the development of large format imaging arrays for sub-mm astronomy based upon microwave Kinetic Inductance detectors and their read-out. In particular we focus on the arrays developed for the A-MKID instrument for the APEX telescope. AMKID contains 2 focal plane arrays, covering a field of view of 15?x15?. One array is optimized for the 350 GHz telluric window, the other for the 850 GHz window. Both arrays are constructed from four 61 x 61 mm detector chips, each of which contains up to 3400 detectors and up to 880 detectors per readout line. The detectors are lens antenna coupled MKIDs made from NbTiN and Aluminium that reach photon noise limited sensitivity in combination with a high optical coupling. The lens-antenna radiation coupling enables the use of 4K optics and Lyot stop due to the intrinsic directivity of the detector beam, allowing a simple cryogenic architecture. We discuss the pixel design and verification, detector packaging and the array performance. We will also discuss the readout system, which is a combination of a digital and analog back-end that can read-out up to 4000 pixels simultaneously using frequency division multiplexing.

Microelectronics used for Semiconductor Imaging Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heijne, Erik H. M.

Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

X-ray detectors in medical imaging

NASA Astrophysics Data System (ADS)

Spahn, Martin

2013-12-01

Healthcare systems are subject to continuous adaptation, following trends such as the change of demographic structures, the rise of life-style related and chronic diseases, and the need for efficient and outcome-oriented procedures. This also influences the design of new imaging systems as well as their components. The applications of X-ray imaging in the medical field are manifold and have led to dedicated modalities supporting specific imaging requirements, for example in computed tomography (CT), radiography, angiography, surgery or mammography, delivering projection or volumetric imaging data. Depending on the clinical needs, some X-ray systems enable diagnostic imaging while others support interventional procedures. X-ray detector design requirements for the different medical applications can vary strongly with respect to size and shape, spatial resolution, frame rates and X-ray flux, among others. Today, integrating X-ray detectors are in common use. They are predominantly based on scintillators (e.g. CsI or Gd2O2S) and arrays of photodiodes made from crystalline silicon (Si) or amorphous silicon (a-Si) or they employ semiconductors (e.g. Se) with active a-Si readout matrices. Ongoing and future developments of X-ray detectors will include optimization of current state-of-the-art integrating detectors in terms of performance and cost, will enable the usage of large size CMOS-based detectors, and may facilitate photon counting techniques with the potential to further enhance performance characteristics and foster the prospect of new clinical applications.

The development and test of ultra-large-format multi-anode microchannel array detector systems

NASA Technical Reports Server (NTRS)

Timothy, J. G.

1984-01-01

The specific tasks that were accomplished with each of the key elements of the multi-anode microchannel array detector system are described. The modes of operation of position-sensitive electronic readout systems for use with high-gain microchannel plates are described and their performance characteristics compared and contrasted. Multi-anode microchannel array detector systems with formats as large as 256 x 1024 pixels are currently under evaluation. Preliminary performance data for sealed ultraviolet and visible-light detector tubes show that the detector systems have unique characteristics which make them complementary to photoconductive array detectors, such as CCDs, and superior to alternative pulse-counting detector systems employing high-gain MCPs.

Spectral X-Ray Diffraction using a 6 Megapixel Photon Counting Array Detector.

PubMed

Muir, Ryan D; Pogranichniy, Nicholas R; Muir, J Lewis; Sullivan, Shane Z; Battaile, Kevin P; Mulichak, Anne M; Toth, Scott J; Keefe, Lisa J; Simpson, Garth J

2015-03-12

Pixel-array array detectors allow single-photon counting to be performed on a massively parallel scale, with several million counting circuits and detectors in the array. Because the number of photoelectrons produced at the detector surface depends on the photon energy, these detectors offer the possibility of spectral imaging. In this work, a statistical model of the instrument response is used to calibrate the detector on a per-pixel basis. In turn, the calibrated sensor was used to perform separation of dual-energy diffraction measurements into two monochromatic images. Targeting applications include multi-wavelength diffraction to aid in protein structure determination and X-ray diffraction imaging.

Spectral x-ray diffraction using a 6 megapixel photon counting array detector

NASA Astrophysics Data System (ADS)

Muir, Ryan D.; Pogranichniy, Nicholas R.; Muir, J. Lewis; Sullivan, Shane Z.; Battaile, Kevin P.; Mulichak, Anne M.; Toth, Scott J.; Keefe, Lisa J.; Simpson, Garth J.

2015-03-01

Pixel-array array detectors allow single-photon counting to be performed on a massively parallel scale, with several million counting circuits and detectors in the array. Because the number of photoelectrons produced at the detector surface depends on the photon energy, these detectors offer the possibility of spectral imaging. In this work, a statistical model of the instrument response is used to calibrate the detector on a per-pixel basis. In turn, the calibrated sensor was used to perform separation of dual-energy diffraction measurements into two monochromatic images. Targeting applications include multi-wavelength diffraction to aid in protein structure determination and X-ray diffraction imaging.

High-resolution x-ray spectroscopy with the EBIT Calorimeter Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Porter, F. Scott; Adams, Joseph S.; Kelley, Richard L.

The EBIT Calorimeter Spectrometer (ECS) is a production-class 36 pixel x-ray calorimeter spectrometer that has been continuously operating at the Electron Beam Ion Trap (EBIT) facility at Lawrence Livermore National Laboratory for almost 2 years. The ECS was designed to be a long-lifetime, turn-key spectrometer that couples high performance with ease of operation and minimal operator intervention. To this end, a variant of the Suzaku/XRS spaceflight detector system has been coupled to a low-maintenance cryogenic system consisting of a long-lifetime liquid He cryostat, and a closed cycle, {sup 3}He pre-cooled adiabatic demagnetization refrigerator. The ECS operates for almost 3 weeksmore » between cryogenic servicing and the ADR operates at 0.05 K for more than 60 hours between automatic recycles under software control. Half of the ECS semiconductor detector array is populated with mid-band pixels that have a resolution of 4.5 eV FWHM, a bandpass from 0.05-12 keV, and a quantum efficiency of 95% at 6 keV. The other half of the array has thick HgTe absorbers that have a bandpass from 0.3 to over 100 keV, an energy resolution of 33 eV FWHM, and a quantum efficiency of 32% at 60 keV. In addition, the ECS uses a real-time, autonomous, data collection and analysis system developed for the Suzaku/XRS instrument and implemented in off-the-shelf hardware for the ECS. Here we will discuss the performance of the ECS instrument and its implementation as a turnkey cryogenic detector system.« less

Microradiography with Semiconductor Pixel Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiri

High resolution radiography (with X-rays, neutrons, heavy charged particles, ...) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.

The hyperion particle-γ detector array

DOE PAGES

Hughes, R. O.; Burke, J. T.; Casperson, R. J.; ...

2017-03-08

Hyperion is a new high-efficiency charged-particle γ-ray detector array which consists of a segmented silicon telescope for charged-particle detection and up to fourteen high-purity germanium clover detectors for the detection of coincident γ rays. The array will be used in nuclear physics measurements and Stockpile Stewardship studies and replaces the STARLiTeR array. In conclusion, this article discusses the features of the array and presents data collected with the array in the commissioning experiment.

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

NASA Astrophysics Data System (ADS)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Design and fabrication of two-dimensional semiconducting bolometer arrays for HAWC and SHARC-II

NASA Astrophysics Data System (ADS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. D.; Harper, D. A.; Jhabvala, Murzy D.; Moseley, S. H.; Rennick, Timothy; Shirron, Peter J.; Smith, W. W.; Staguhn, Johannes G.

2003-02-01

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC "Pop-Up" Detectors (PUD's) use a unique folding technique to enable a 12 × 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 × 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Semiconductor Laser Low Frequency Noise Characterization

NASA Technical Reports Server (NTRS)

Maleki, Lute; Logan, Ronald T.

1996-01-01

This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

Mini Compton Camera Based on an Array of Virtual Frisch-Grid CdZnTe Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Wonho; Bolotnikov, Aleksey; Lee, Taewoong

In this study, we constructed a mini Compton camera based on an array of CdZnTe detectors and assessed its spectral and imaging properties. The entire array consisted of 6×6 Frisch-grid CdZnTe detectors, each with a size of 6×6 ×15 mm 3. Since it is easier and more practical to grow small CdZnTe crystals rather than large monolithic ones, constructing a mosaic array of parallelepiped crystals can be an effective way to build a more efficient, large-volume detector. With the fully operational CdZnTe array, we measured the energy spectra for 133Ba -, 137Cs -, 60Co-radiation sources; we also located these sourcesmore » using a Compton imaging approach. Although the Compton camera was small enough to hand-carry, its intrinsic efficiency was several orders higher than those generated in previous researches using spatially separated arrays, because our camera measured the interactions inside the CZT detector array, wherein the detector elements were positioned very close to each other. Lastly, the performance of our camera was compared with that based on a pixelated detector.« less

Mini Compton Camera Based on an Array of Virtual Frisch-Grid CdZnTe Detectors

DOE PAGES

Lee, Wonho; Bolotnikov, Aleksey; Lee, Taewoong; ...

2016-02-15

In this study, we constructed a mini Compton camera based on an array of CdZnTe detectors and assessed its spectral and imaging properties. The entire array consisted of 6×6 Frisch-grid CdZnTe detectors, each with a size of 6×6 ×15 mm 3. Since it is easier and more practical to grow small CdZnTe crystals rather than large monolithic ones, constructing a mosaic array of parallelepiped crystals can be an effective way to build a more efficient, large-volume detector. With the fully operational CdZnTe array, we measured the energy spectra for 133Ba -, 137Cs -, 60Co-radiation sources; we also located these sourcesmore » using a Compton imaging approach. Although the Compton camera was small enough to hand-carry, its intrinsic efficiency was several orders higher than those generated in previous researches using spatially separated arrays, because our camera measured the interactions inside the CZT detector array, wherein the detector elements were positioned very close to each other. Lastly, the performance of our camera was compared with that based on a pixelated detector.« less

The "collimator monitoring fill factor" of a two-dimensional detector array, a measure of its ability to detect collimation errors.

PubMed

Stelljes, Tenzin Sonam; Looe, Hui Khee; Harder, Dietrich; Poppe, Björn

2017-03-01

Two-dimensional detector arrays are routinely used for constancy checks and treatment plan verification in photon-beam radiotherapy. In addition to the spatial resolution of the dose profiles, the "coverage" of the radiation field with respect to the detection of any beam collimation deficiency appears as the second characteristic feature of a detector array. The here proposed "collimator monitoring fill factor" (CM fill factor) has been conceived to serve as a quantitative characteristic of this "coverage". The CM fill factor is defined as the probability of a 2D array to detect any collimator position error. Therefore, it is represented by the ratio of the "sensitive area" of a single detector, in which collimator position errors are detectable, and the geometrical "cell area" associated with this detector within the array. Numerical values of the CM fill factor have been Monte Carlo simulated for 2D detector arrays equipped with air-vented ionization chambers, liquid-filled ionization chambers and diode detectors and were compared with the "FWHM fill factor" defined by Gago-Arias et al. (2012). For arrays with vented ionization chambers, the differences between the CM fill factor and the FWHM fill factor are moderate, but occasionally the latter exceeds unity. For narrower detectors such as liquid-filled ionization chambers and Si diodes and for small sampling distances, large differences between the FWHM fill factor and the CM fill factor have been observed. These differences can be explained by the shapes of the fluence response functions of these narrow detectors. A new parameter "collimator monitoring fill factor" (CM fill factor), applicable to quantitate the collimator position error detection probability of a 2D detector array, has been proposed. It is designed as a help in classifying the clinical performance of two-dimensional detector arrays in photon-beam radiotherapy. © 2017 American Association of Physicists in Medicine.

Proceedings of the Third Infrared Detector Technology Workshop

NASA Technical Reports Server (NTRS)

Mccreight, Craig R. (Compiler)

1989-01-01

This volume consists of 37 papers which summarize results presented at the Third Infrared Detector Technology Workshop, held February 7-9, 1989, at Ames Research Center. The workshop focused on infrared (IR) detector, detector array, and cryogenic electronic technologies relevant to low-background space astronomy. Papers on discrete IR detectors, cryogenic readouts, extrinsic and intrinsic IR arrays, and recent results from ground-based observations with integrated arrays were given. Recent developments in the second-generation Hubble Space Telescope (HST) infrared spectrometer and in detectors and arrays for the European Space Agency's Infrared Space Observatory (ISO) are also included, as are status reports on the Space Infrared Telescope Facility (SIRTF) and the Stratospheric Observatory for Infrared Astronomy (SOFIA) projects.

Status of LWIR HgCdTe infrared detector technology

NASA Technical Reports Server (NTRS)

Reine, M. B.

1990-01-01

The performance requirements that today's advanced Long Wavelength Infrared (LWIR) focal plane arrays place on the HgCdTe photovoltaic detector array are summarized. The theoretical performance limits for intrinsic LWIR HgCdTe detectors are reviewed as functions of cutoff wavelength and operating temperature. The status of LWIR HgCdTe photovoltaic detectors is reviewed and compared to the focal plane array (FPA) requirements and to the theoretical limits. Emphasis is placed on recent data for two-layer HgCdTe PLE heterojunction photodiodes grown at Loral with cutoff wavelengths ranging between 10 and 19 microns at temperatures of 70 to 80 K. Development trends in LWIR HgCdTe detector technology are outlined, and conclusions are drawn about the ability for photovoltaic HgCdTe detector arrays to satisfy a wide variety of advanced FPA array applications.

A semiconductor radiation imaging pixel detector for space radiation dosimetry

NASA Astrophysics Data System (ADS)

Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

2015-07-01

Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented.

Proceedings of the Second Infrared Detector Technology Workshop

NASA Technical Reports Server (NTRS)

Mccreight, C. R. (Compiler)

1986-01-01

The workshop focused on infrared detector, detector array, and cryogenic electronic technologies relevant to low-background space astronomy. Papers are organized into the following categories: discrete infrared detectors and readout electronics; advanced bolometers; intrinsic integrated infrared arrays; and extrinsic integrated infrared arrays. Status reports on the Space Infrared Telescope Facility (SIRTF) and Infrared Space Observatory (ISO) programs are also included.

Underground Prototype Water Cherenkov Muon Detector with the Tibet Air Shower Array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amenomori, M.; Nanjo, H.; Bi, X. J.

2008-12-24

We are planning to build a 10,000 m{sup 2} water-Cherenkov-type muon detector (MD) array under the Tibet air shower (AS) array. The Tibet AS+MD array will have the sensitivity to detect gamma rays in the 100 TeV region by an order of the magnitude better than any other previous existing detectors in the world. In the late fall of 2007, a prototype water Cherenkov muon detector of approximately 100 m{sup 2} was constructed under the existing Tibet AS array. The preliminary data analysis is in good agreement with our MC simulation. We are now ready for further expanding the undergroundmore » water Cherenkov muon detector.« less

PbS-PbSe IR detector arrays

NASA Technical Reports Server (NTRS)

Barrett, John R. (Inventor)

1986-01-01

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chipping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

NASA Technical Reports Server (NTRS)

Aslam, S.; Gronoff, G.; Hewagama, T.; Janz, S.; Kotecki, C.

2012-01-01

The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

Strong confinement of optical fields using localized surface phonon polaritons in cubic boron nitride.

PubMed

Chatzakis, Ioannis; Krishna, Athith; Culbertson, James; Sharac, Nicholas; Giles, Alexander J; Spencer, Michael G; Caldwell, Joshua D

2018-05-01

Phonon polaritons (PhPs) are long-lived electromagnetic modes that originate from the coupling of infrared (IR) photons with the bound ionic lattice of a polar crystal. Cubic-boron nitride (cBN) is such a polar, semiconductor material which, due to the light atomic masses, can support high-frequency optical phonons. Here we report on random arrays of cBN nanostructures fabricated via an unpatterned reactive ion etching process. Fourier-transform infrared reflection spectra suggest the presence of localized surface PhPs within the reststrahlen band, with quality factors in excess of 38 observed. These can provide the basis of next-generation IR optical components such as antennas for communication, improved chemical spectroscopies, and enhanced emitters, sources, and detectors.

Semiconductor projectile impact detector

NASA Technical Reports Server (NTRS)

Shriver, E. L. (Inventor)

1977-01-01

A semiconductor projectile impact detector is described for use in determining micrometeorite presence, as well as its flux and energy comprising a photovoltaic cell which generates a voltage according to the light and heat emitted by the micrometeorites upon impact. A counter and peak amplitude measuring device were used to indicate the number of particules which strike the surface of the cell as well as the kinetic energy of each of the particles.

Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors

DTIC Science & Technology

2014-06-28

constructed from inexpensive semiconductor lasers could lead to the development of novel neuro-inspired optical computing devices (threshold detectors ...optical computing devices (threshold detectors , logic gates, signal recognition, etc.). Other topics of research included the analysis of extreme events in...Extreme events is nowadays a highly active field of research. Rogue waves, earthquakes of high magnitude and financial crises are all rare and

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

PubMed

Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

2011-06-10

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

Mechanical Designs and Developement of Advanced ACT: A Transfomative Upgrade to the ACTPol Receiver on the Atacama Cosmology Telescope.

NASA Astrophysics Data System (ADS)

Ward, Jonathan; Advanced ACT Collaboration, NASA Space Technology Research Fellowship

2017-06-01

The Atacama Cosmology Telescope is a six-meter diameter telescope located at 17,000 feet (5,200 meters) on Cerro Toco in the Andes Mountains of northern Chile. The next generation Advanced ACT (AdvACT) experiment is currently underway and will consist of three multichroic TES bolometer arrays operating together, totaling 5800 detectors on the sky. Each array will be sensitive to two frequency bands: a high frequency (HF) array at 150 and 230 GHz, two middle frequency (MF) arrays at 90 and 150 GHz, and a low frequency (LF) array at 28 and 41 GHz. The AdACT detector arrays will feature a revamped design when compared to ACTPol, including a transition to 150mm wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors consists of a feedhorn array of stacked silicon wafers which form a corrugated profile leading to each pixel. This is then followed by a four-piece detector stack assembly of silicon wafers which includes a waveguide interface plate, detector wafer, backshort cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured out of gold-plated, high purity copper. In addition to the detector array assembly, the array package also encloses the majority of our readout electronics. We present the full mechanical design of the AdvACT HF and MF detector array packages along with a detailed look at the detector array assemblies. We also highlight the use of continuously rotating warm half-wave plates (HWPs) at the front of the AdvACT receiver. We review the design of the rotation system and also early pipeline data analysis results. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT instruments with pre-existing ACTPol infrastructure.

Different Detector Types Used in Plasma Physics Experiment

NASA Astrophysics Data System (ADS)

Balovnev, A. V.; Manokhin, I. L.; Grigoryeva, I. G.; Kostyushin, V. A.; Savelov, A. S.; Salakhutdinov, G. Kh.

2017-12-01

We analyzed the possibility of using different detector types (semiconductor, scintillator, thermoluminescent, nuclear emulsions) for plasma diagnostics. We investigated the main characteristics of such detectors, on the basis of which an X-ray spectrometer complex was created.

Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

PubMed Central

Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

2009-01-01

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

Integrated detector array technology for infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, c. R.; Goebel, J. H.; Mckelvey, M. E.; Stafford, P. S.; Lee, J. H.

1984-01-01

The status of laboratory and telescope tests of integrated infrared detector array technology for astronomical applications is described. The devices tested represent a number of extrinsic and intrinsic detector materials and various multiplexer designs. Infrared arrays have now been used in successful astronomical applications. These have shown that device sensitivities can be comparable to those of discrete detector systems and excellent astronomical imagery can be produced.

Multianode microchannel array detectors for Space Shuttle imaging applications

NASA Technical Reports Server (NTRS)

Timothy, J. G.; Bybee, R. L.

1981-01-01

The Multi-Anode Microchannel Arrays (MAMAs) are a family of photoelectric, photoncounting array detectors that have been developed and qualified specifically for use in space. MAMA detectors with formats as large as 256 x 1024 pixels are now in use or under construction for a variety of imaging and tracking applications. These photo-emissive detectors can be operated in a windowless configuration at extreme ultraviolet and soft X-ray wavelengths or in a sealed configuration at ultraviolet and visible wavelengths. The construction and modes-of-operation of the MAMA detectors are briefly described and the scientific objectives of a number of sounding rocket and Space Shuttle instruments utilizing these detectors are outlined. Performance characteristics of the MAMA detectors that are of fundamental importance for operation in the Space Shuttle environment are described and compared with those of the photo-conductive array detectors such as the CCDs and CIDs.

Large gamma-ray detector arrays and electromagnetic separators

NASA Astrophysics Data System (ADS)

Lee, I.-Yang

2013-12-01

The use of large gamma-ray detector arrays with electromagnetic separators is a powerful combination. Various types of gamma-ray detectors have been used; some provide high detector efficiency such as scintillation detector array, others use Ge detectors for good energy resolution, and recently developed Ge energy tracking arrays gives both high peak-to-background ratio and position resolution. Similarly, different types of separators were used to optimize the performance under different experimental requirements and conditions. For example, gas-filled separators were used in heavy element studies for their large efficiency and beam rejection factor. Vacuum separators with good isotope resolution were used in transfer and fragmentation reactions for the study of nuclei far from stability. This paper presents results from recent experiments using gamma-ray detector arrays in combination with electromagnetic separators, and discusses the physics opportunities provided by these instruments. In particular, we review the performance of the instruments currently in use, and discuss the requirements of instruments for future radioactive beam accelerator facilities.

Telescope Array Low energy Extension: TALE

NASA Astrophysics Data System (ADS)

Ogio, Shoichi

TALE, the Telescope Array Low Energy extension was designed to lower the energy threshold to about 1016.5 eV. TALE has a surface detector (SD) array made up of 103 scintillation counters (40 with 400 m spacing, 36 with 600 m spacing and 27 with 1.2 km spacing) and a Fluorescence Detector (FD) station consisting of ten FD telescopes working with the Telescope Array Middle Drum FD station, which is made up of 14 telescopes. TALE-FD full operation started in 2013 and the SD array was partially-completed with 16 SDs and continues the operation from 2014. We will describe the history and the current status of the detectors and will make a brief report about the FD and the hybrid analysis results. TALE detector will be completed as a hybrid air shower detector in 2018. We will report the technical details of the detectors, the schedule and the expected performances.

Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. A. (Inventor)

1982-01-01

A pryoelectric detector array and the method for making it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strip. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of the layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Pyroelectric detector arrays

NASA Technical Reports Server (NTRS)

Fripp, A. L.; Robertson, J. B.; Breckenridge, R. (Inventor)

1982-01-01

A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

Multilayer Semiconductor Charged-Particle Spectrometers for Accelerator Experiments

NASA Astrophysics Data System (ADS)

Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

2018-03-01

The current state of studies in the field of development of multilayer semiconductor systems (semiconductor detector (SCD) telescopes), which allow the energy to be precisely measured within a large dynamic range (from a few to a few hundred MeV) and the particles to be identified in a wide mass range (from pions to multiply charged nuclear fragments), is presented. The techniques for manufacturing the SCD telescopes from silicon and high-purity germanium are described. The issues of measuring characteristics of the constructed detectors and their impact on the energy resolution of the SCD telescopes and on the quality of the experimental data are considered. Much attention is given to the use of the constructed semiconductor devices in experimental studies at accelerators of PNPI (Gatchina), LANL (Los Alamos) and CELSIUS (Uppsala).

Indium Hybridization of Large Format TES Bolometer Arrays to Readout Multiplexers for Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Costen, Nick; Allen, Christine

2007-01-01

This conference poster reviews the Indium hybridization of the large format TES bolometer arrays. We are developing a key technology to enable the next generation of detectors. That is the Hybridization of Large Format Arrays using Indium bonded detector arrays containing 32x40 elements which conforms to the NIST multiplexer readout architecture of 1135 micron pitch. We have fabricated and hybridized mechanical models with the detector chips bonded after being fully back-etched. The mechanical support consists of 30 micron walls between elements Demonstrated electrical continuity for each element. The goal is to hybridize fully functional array of TES detectors to NIST readout.

Multi-Element CZT Array for Nuclear Safeguards Applications

NASA Astrophysics Data System (ADS)

Kwak, S.-W.; Lee, A.-R.; Shin, J.-K.; Park, U.-R.; Park, S.; Kim, Y.; Chung, H.

2016-12-01

Due to its electronic properties, a cadmium zinc telluride (CZT) detector has been used as a hand-held portable nuclear measurement instrument. However, a CZT detector has low detection efficiency because of a limitation of its single crystal growth. To address its low efficiency, we have constructed a portable four-CZT array based gamma-ray spectrometer consisting of a CZT array, electronics for signal processing and software. Its performance has been characterized in terms of energy resolution and detection efficiency using radioactive sources and nuclear materials. Experimental results showed that the detection efficiency of the four-CZT array based gamma-ray spectrometer was much higher than that of a single CZT detector in the array. The FWHMs of the CZT array were 9, 18, and 21 keV at 185.7, 662, and 1,332 keV, respectively. Some gamma-rays in a range of 100 keV to 200 keV were not clear in a single crystal detector while those from the CZT array system were observed to be clear. The energy resolution of the CZT array system was only slightely worse than those of the single CZT detectors. By combining several single crystals and summing signals from each single detector at a digital electronic circuit, the detection efficiency of a CZT array system increased without degradation of its energy resolution. The technique outlined in this paper shows a very promising method for designing a CZT-based gamma-ray spectroscopy that overcomes the fundamental limitations of a small volume CZT detector.

The Impact of Array Detectors on Raman Spectroscopy

ERIC Educational Resources Information Center

Denson, Stephen C.; Pommier, Carolyn J. S.; Denton, M. Bonner

2007-01-01

The impact of array detectors in the field of Raman spectroscopy and all low-light-level spectroscopic techniques is examined. The high sensitivity of array detectors has allowed Raman spectroscopy to be used to detect compounds at part per million concentrations and to perform Raman analyses at advantageous wavelengths.

Method of fabricating a PbS-PbSe IR detector array

NASA Technical Reports Server (NTRS)

Barrett, John R. (Inventor)

1987-01-01

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chiping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

Three-dimensional cross point readout detector design for including depth information

NASA Astrophysics Data System (ADS)

Lee, Seung-Jae; Baek, Cheol-Ha

2018-04-01

We designed a depth-encoding positron emission tomography (PET) detector using a cross point readout method with wavelength-shifting (WLS) fibers. To evaluate the characteristics of the novel detector module and the PET system, we used the DETECT2000 to perform optical photon transport in the crystal array. The GATE was also used. The detector module is made up of four layers of scintillator arrays, the five layers of WLS fiber arrays, and two sensor arrays. The WLS fiber arrays in each layer cross each other to transport light to each sensor array. The two sensor arrays are coupled to the forward and left sides of the WLS fiber array, respectively. The identification of three-dimensional pixels was determined using a digital positioning algorithm. All pixels were well decoded, with the system resolution ranging from 2.11 mm to 2.29 mm at full width at half maximum (FWHM).

Backshort-Under-Grid arrays for infrared astronomy

NASA Astrophysics Data System (ADS)

Allen, C. A.; Benford, D. J.; Chervenak, J. A.; Chuss, D. T.; Miller, T. M.; Moseley, S. H.; Staguhn, J. G.; Wollack, E. J.

2006-04-01

We are developing a kilopixel, filled bolometer array for space infrared astronomy. The array consists of three individual components, to be merged into a single, working unit; (1) a transition edge sensor bolometer array, operating in the milliKelvin regime, (2) a quarter-wave backshort grid, and (3) superconducting quantum interference device multiplexer readout. The detector array is designed as a filled, square grid of suspended, silicon bolometers with superconducting sensors. The backshort arrays are fabricated separately and will be positioned in the cavities created behind each detector during fabrication. The grids have a unique interlocking feature machined into the walls for positioning and mechanical stability. The spacing of the backshort beneath the detector grid can be set from ˜30 300 μm, by independently adjusting two process parameters during fabrication. The ultimate goal is to develop a large-format array architecture with background-limited sensitivity, suitable for a wide range of wavelengths and applications, to be directly bump bonded to a multiplexer circuit. We have produced prototype two-dimensional arrays having 8×8 detector elements. We present detector design, fabrication overview, and assembly technologies.

Superconducting Bolometer Array Architectures

NASA Technical Reports Server (NTRS)

Benford, Dominic; Chervenak, Jay; Irwin, Kent; Moseley, S. Harvey; Shafer, Rick; Staguhn, Johannes; Wollack, Ed; Oegerle, William (Technical Monitor)

2002-01-01

The next generation of far-infrared and submillimeter instruments require large arrays of detectors containing thousands of elements. These arrays will necessarily be multiplexed, and superconducting bolometer arrays are the most promising present prospect for these detectors. We discuss our current research into superconducting bolometer array technologies, which has recently resulted in the first multiplexed detections of submillimeter light and the first multiplexed astronomical observations. Prototype arrays containing 512 pixels are in production using the Pop-Up Detector (PUD) architecture, which can be extended easily to 1000 pixel arrays. Planar arrays of close-packed bolometers are being developed for the GBT (Green Bank Telescope) and for future space missions. For certain applications, such as a slewed far-infrared sky survey, feedhorncoupling of a large sparsely-filled array of bolometers is desirable, and is being developed using photolithographic feedhorn arrays. Individual detectors have achieved a Noise Equivalent Power (NEP) of -10(exp 17) W/square root of Hz at 300mK, but several orders of magnitude improvement are required and can be reached with existing technology. The testing of such ultralow-background detectors will prove difficult, as this requires optical loading of below IfW. Antenna-coupled bolometer designs have advantages for large format array designs at low powers due to their mode selectivity.

Fabrication of Superconducting Detectors for Studying the Universe

NASA Technical Reports Server (NTRS)

Brown, Ari-David

2012-01-01

Superconducting detectors offer unparalleled means of making astronomical/cosmological observations. Fabrication of these detectors is somewhat unconventional; however, a lot of novel condensed matter physics/materials scientific discoveries and semiconductor fabrication processes can be generated in making these devices.

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1984-02-24

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, Pavel; Gatti, Emilio

1987-01-01

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1987-08-18

A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

Nuclear Science Symposium, 21st, Scintillation and Semiconductor Counter Symposium, 14th, and Nuclear Power Systems Symposium, 6th, Washington, D.C., December 11-13, 1974, Proceedings

NASA Technical Reports Server (NTRS)

1975-01-01

Papers are presented dealing with latest advances in the design of scintillation counters, semiconductor radiation detectors, gas and position sensitive radiation detectors, and the application of these detectors in biomedicine, satellite instrumentation, and environmental and reactor instrumentation. Some of the topics covered include entopistic scintillators, neutron spectrometry by diamond detector for nuclear radiation, the spherical drift chamber for X-ray imaging applications, CdTe detectors in radioimmunoassay analysis, CAMAC and NIM systems in the space program, a closed loop threshold calibrator for pulse height discriminators, an oriented graphite X-ray diffraction telescope, design of a continuous digital-output environmental radon monitor, and the optimization of nanosecond fission ion chambers for reactor physics. Individual items are announced in this issue.

Detection techniques for tenuous planetary atmospheres

NASA Technical Reports Server (NTRS)

Hoenig, S. A.; Summerton, J. E.; Kirchner, J. D.; Allred, J. B.

1974-01-01

The development of new types of detectors for analysis of planetary atmospheres is discussed. Initially, the interest was in detectors for use under partial vacuum conditions; recently, the program has been extended to include detectors for use at one atmosphere and adsorption systems for control and separation of gases. Results to date have included detector for O2 and H2 under partial vacuum conditions. Experiments on detectors for use at high pressures began in 1966; and systems for CO, H2, and O2 were reported in 1967 and 1968. In 1968 studies began on an electrically controlled adsorbent. It was demonstrated that under proper conditions a thin film of semiconductor material could be electrically cycled to absorb and desorb a specific gas. This work was extended to obtain quantitative data on the use of semiconductors as controllable adsorbents.

Development of depth encoding small animal PET detectors using dual-ended readout of pixelated scintillator arrays with SiPMs.

PubMed

Kuang, Zhonghua; Sang, Ziru; Wang, Xiaohui; Fu, Xin; Ren, Ning; Zhang, Xianming; Zheng, Yunfei; Yang, Qian; Hu, Zhanli; Du, Junwei; Liang, Dong; Liu, Xin; Zheng, Hairong; Yang, Yongfeng

2018-02-01

The performance of current small animal PET scanners is mainly limited by the detector performance and depth encoding detectors are required to develop PET scanner to simultaneously achieve high spatial resolution and high sensitivity. Among all depth encoding PET detector approaches, dual-ended readout detector has the advantage to achieve the highest depth of interaction (DOI) resolution and spatial resolution. Silicon photomultiplier (SiPM) is believed to be the photodetector of the future for PET detector due to its excellent properties as compared to the traditional photodetectors such as photomultiplier tube (PMT) and avalanche photodiode (APD). The purpose of this work is to develop high resolution depth encoding small animal PET detector using dual-ended readout of finely pixelated scintillator arrays with SiPMs. Four lutetium-yttrium oxyorthosilicate (LYSO) arrays with 11 × 11 crystals and 11.6 × 11.6 × 20 mm 3 outside dimension were made using ESR, Toray and BaSO 4 reflectors. The LYSO arrays were read out with Hamamatsu 4 × 4 SiPM arrays from both ends. The SiPM array has a pixel size of 3 × 3 mm 2 , 0.2 mm gap in between the pixels and a total active area of 12.6 × 12.6 mm 2 . The flood histograms, DOI resolution, energy resolution and timing resolution of the four detector modules were measured and compared. All crystals can be clearly resolved from the measured flood histograms of all four arrays. The BaSO 4 arrays provide the best and the ESR array provides the worst flood histograms. The DOI resolution obtained from the DOI profiles of the individual crystals of the four array is from 2.1 to 2.35 mm for events with E > 350 keV. The DOI ratio variation among crystals is bigger for the BaSO 4 arrays as compared to both the ESR and Toray arrays. The BaSO 4 arrays provide worse detector based DOI resolution. The photopeak amplitude of the Toray array had the maximum change with depth, it provides the worst energy resolution of 21.3%. The photopeak amplitude of the BaSO 4 array with 80 μm reflector almost doesn't change with depth, it provides the best energy resolution of 12.9%. A maximum timing shift of 1.37 ns to 1.61 ns among the corner and the center crystals in the four arrays was obtained due to the use of resistor network readout. A crystal based timing resolution of 0.68 ns to 0.83 ns and a detector based timing resolution of 1.26 ns to 1.45 ns were obtained for the four detector modules. Four high resolution depth encoding small animal PET detectors were developed using dual-ended readout of pixelated scintillator arrays with SiPMs. The performance results show that those detectors can be used to build a small animal PET scanner to simultaneously achieve uniform high spatial resolution and high sensitivity. © 2017 American Association of Physicists in Medicine.

Radiation detector having a multiplicity of individual detecting elements

DOEpatents

Whetten, Nathan R.; Kelley, John E.

1985-01-01

A radiation detector has a plurality of detector collection element arrays immersed in a radiation-to-electron conversion medium. Each array contains a multiplicity of coplanar detector elements radially disposed with respect to one of a plurality of positions which at least one radiation source can assume. Each detector collector array is utilized only when a source is operative at the associated source position, negating the necessity for a multi-element detector to be moved with respect to an object to be examined. A novel housing provides the required containment of a high-pressure gas conversion medium.

MTF measurement and analysis of linear array HgCdTe infrared detectors

NASA Astrophysics Data System (ADS)

Zhang, Tong; Lin, Chun; Chen, Honglei; Sun, Changhong; Lin, Jiamu; Wang, Xi

2018-01-01

The slanted-edge technique is the main method for measurement detectors MTF, however this method is commonly used on planar array detectors. In this paper the authors present a modified slanted-edge method to measure the MTF of linear array HgCdTe detectors. Crosstalk is one of the major factors that degrade the MTF value of such an infrared detector. This paper presents an ion implantation guard-ring structure which was designed to effectively absorb photo-carriers that may laterally defuse between adjacent pixels thereby suppressing crosstalk. Measurement and analysis of the MTF of the linear array detectors with and without a guard-ring were carried out. The experimental results indicated that the ion implantation guard-ring structure effectively suppresses crosstalk and increases MTF value.

Detector arrays for low-background space infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Mckelvey, M. E.; Goebel, J. H.; Anderson, G. M.; Lee, J. H.

1986-01-01

The status of development and characterization tests of integrated infrared detector array technology for astronomy applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, with hybrid silicon multiplexers. Laboratory test results and successful astronomy imagery have established the usefulness of integrated arrays in low-background astronomy applications.

Detector arrays for low-background space infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Mckelvey, M. E.; Goebel, J. H.; Anderson, G. M.; Lee, J. H.

1986-01-01

The status of development and characterization tests of integrated infrared detector array technology for astronomy applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, with hybrid silicon multiplexers. Laboratary test results and successful astronomy imagery have established the usefulness of integrated arrays in low-background astronomy applications.

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging

PubMed Central

Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P.; Zolliker, Peter

2016-01-01

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8–14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed. PMID:26861341

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging.

PubMed

Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P; Zolliker, Peter

2016-02-06

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8-14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

Low power, lightweight vapor sensing using arrays of conducting polymer composite chemically-sensitive resistors

NASA Technical Reports Server (NTRS)

Ryan, M. A.; Lewis, N. S.

2001-01-01

Arrays of broadly responsive vapor detectors can be used to detect, identify, and quantify vapors and vapor mixtures. One implementation of this strategy involves the use of arrays of chemically-sensitive resistors made from conducting polymer composites. Sorption of an analyte into the polymer composite detector leads to swelling of the film material. The swelling is in turn transduced into a change in electrical resistance because the detector films consist of polymers filled with conducting particles such as carbon black. The differential sorption, and thus differential swelling, of an analyte into each polymer composite in the array produces a unique pattern for each different analyte of interest, Pattern recognition algorithms are then used to analyze the multivariate data arising from the responses of such a detector array. Chiral detector films can provide differential detection of the presence of certain chiral organic vapor analytes. Aspects of the spaceflight qualification and deployment of such a detector array, along with its performance for certain analytes of interest in manned life support applications, are reviewed and summarized in this article.

Method and apparatus for enhanced sensitivity filmless medical x-ray imaging, including three-dimensional imaging

DOEpatents

Parker, S.

1995-10-24

A filmless X-ray imaging system includes at least one X-ray source, upper and lower collimators, and a solid-state detector array, and can provide three-dimensional imaging capability. The X-ray source plane is distance z{sub 1} above upper collimator plane, distance z{sub 2} above the lower collimator plane, and distance z{sub 3} above the plane of the detector array. The object to be X-rayed is located between the upper and lower collimator planes. The upper and lower collimators and the detector array are moved horizontally with scanning velocities v{sub 1}, v{sub 2}, v{sub 3} proportional to z{sub 1}, z{sub 2} and z{sub 3}, respectively. The pattern and size of openings in the collimators, and between detector positions is proportional such that similar triangles are always defined relative to the location of the X-ray source. X-rays that pass through openings in the upper collimator will always pass through corresponding and similar openings in the lower collimator, and thence to a corresponding detector in the underlying detector array. Substantially 100% of the X-rays irradiating the object (and neither absorbed nor scattered) pass through the lower collimator openings and are detected, which promotes enhanced sensitivity. A computer system coordinates repositioning of the collimators and detector array, and X-ray source locations. The computer system can store detector array output, and can associate a known X-ray source location with detector array output data, to provide three-dimensional imaging. Detector output may be viewed instantly, stored digitally, and/or transmitted electronically for image viewing at a remote site. 5 figs.

Method and apparatus for enhanced sensitivity filmless medical x-ray imaging, including three-dimensional imaging

DOEpatents

Parker, Sherwood

1995-01-01

A filmless X-ray imaging system includes at least one X-ray source, upper and lower collimators, and a solid-state detector array, and can provide three-dimensional imaging capability. The X-ray source plane is distance z.sub.1 above upper collimator plane, distance z.sub.2 above the lower collimator plane, and distance z.sub.3 above the plane of the detector array. The object to be X-rayed is located between the upper and lower collimator planes. The upper and lower collimators and the detector array are moved horizontally with scanning velocities v.sub.1, v.sub.2, v.sub.3 proportional to z.sub.1, z.sub.2 and z.sub.3, respectively. The pattern and size of openings in the collimators, and between detector positions is proportional such that similar triangles are always defined relative to the location of the X-ray source. X-rays that pass through openings in the upper collimator will always pass through corresponding and similar openings in the lower collimator, and thence to a corresponding detector in the underlying detector array. Substantially 100% of the X-rays irradiating the object (and neither absorbed nor scattered) pass through the lower collimator openings and are detected, which promotes enhanced sensitivity. A computer system coordinates repositioning of the collimators and detector array, and X-ray source locations. The computer system can store detector array output, and can associate a known X-ray source location with detector array output data, to provide three-dimensional imaging. Detector output may be viewed instantly, stored digitally, and/or transmitted electronically for image viewing at a remote site.

Assembly and Integration Process of the First High Density Detector Array for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Li, Yaqiong; Choi, Steve; Ho, Shuay-Pwu; Crowley, Kevin T.; Salatino, Maria; Simon, Sara M.; Staggs, Suzanne T.; Nati, Federico; Wollack, Edward J.

2016-01-01

The Advanced ACTPol (AdvACT) upgrade on the Atacama Cosmology Telescope (ACT) consists of multichroicTransition Edge Sensor (TES) detector arrays to measure the Cosmic Microwave Background (CMB) polarization anisotropies in multiple frequency bands. The first AdvACT detector array, sensitive to both 150 and 230 GHz, is fabricated on a 150 mm diameter wafer and read out with a completely different scheme compared to ACTPol. Approximately 2000 TES bolometers are packed into the wafer leading to both a much denser detector density and readout circuitry. The demonstration of the assembly and integration of the AdvACT arrays is important for the next generation CMB experiments, which will continue to increase the pixel number and density. We present the detailed assembly process of the first AdvACT detector array.

Novel detectors for silicon based microdosimetry, their concepts and applications

NASA Astrophysics Data System (ADS)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

Composition Studies with the Telescope Array Surface Detector

NASA Astrophysics Data System (ADS)

Kuznetsov, Mikhail; Piskunov, Maxim; Rubtsov, Grigory; Troitsky, Sergey; Zhezher, Yana

The results on ultra-high-energy cosmic-ray chemical composition based on the data from the Telescope Array surface-detector are presented. The method is based on the multivariate boosted decision tree (BDT) analysis which uses surface-detector observables. The results on average atomic mass in the energy range 1018.0-1020.0 eV are presented. A comparison with the Telescope Array hybrid results and the Pierre Auger Observatory surface detector results is shown.

Caliste 64: detection unit of a spectro imager array for a hard x-ray space telescope

NASA Astrophysics Data System (ADS)

Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Pinsard, F.; Blondel, C.; Le Mer, I.; Delagnes, E.; Vassal, M. C.; Soufflet, F.; Bocage, R.

2008-07-01

In the frame of the hard X-ray Simbol-X observatory, a joint CNES-ASI space mission to be flown in 2014, a prototype of miniature Cd(Zn)Te camera equipped with 64 pixels has been designed. The device, called Caliste 64, is a spectro-imager with high resolution event time-tagging capability. Caliste 64 integrates a Cd(Zn)Te semiconductor detector with segmented electrode and its front-end electronics made of 64 independent analog readout channels. This 1 × 1 × 2 cm3 camera, able to detect photons in the range from 2 keV up to 250 keV, is an elementary detection unit juxtaposable on its four sides. Consequently, large detector array can be made assembling a mosaic of Caliste 64 units. Electronics readout module is achieved by stacking four IDeF-X V1.1 ASICs, perpendicular to the detection plane. We achieved good noise performances, with a mean Equivalent Noise Charge of ~65 electrons rms over the 64 channels. Time resolution is better than 70 ns rms for energy deposits greater than 50 keV, taking into account electronic noise and technological dispersal, which enables to reject background by anticoincidence with very low probability of error. For the first prototypes, we chose CdTe detectors equipped with Al-Ti-Au Schottky barrier contacts because of their very low dark current and excellent spectroscopic performances. So far, three Caliste 64 cameras have been realized and tested. When the crystal is cooled down to -10°C, the sum spectrum built with the 64 pixels of a Caliste 64 sample results in a spectral resolution of 664 eV FWHM at 13.94 keV and 841 eV FWHM at 59.54 keV.

Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

PubMed Central

Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; Lupini, Andrew R.; Lee, Jaekwang; Basile, Leonardo; Boulesbaa, Abdelaziz; Rouleau, Christopher M.; Puretzky, Alexander A.; Ivanov, Ilia N.; Xiao, Kai; Yoon, Mina; Geohegan, David B.

2015-01-01

The formation of semiconductor heterojunctions and their high-density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional crystalline semiconductors as building blocks in next-generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate an approach for the formation of lithographically patterned arrays of lateral semiconducting heterojunctions within a single two-dimensional crystal. Electron beam lithography is used to pattern MoSe2 monolayer crystals with SiO2, and the exposed locations are selectively and totally converted to MoS2 using pulsed laser vaporization of sulfur to form MoSe2/MoS2 heterojunctions in predefined patterns. The junctions and conversion process are studied by Raman and photoluminescence spectroscopy, atomically resolved scanning transmission electron microscopy and device characterization. This demonstration of lateral heterojunction arrays within a monolayer crystal is an essential step for the integration of two-dimensional semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin devices. PMID:26198727

An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras.

PubMed

Bolotnikov, A E; Ackley, K; Camarda, G S; Cherches, C; Cui, Y; De Geronimo, G; Fried, J; Hodges, D; Hossain, A; Lee, W; Mahler, G; Maritato, M; Petryk, M; Roy, U; Salwen, C; Vernon, E; Yang, G; James, R B

2015-07-01

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm(3) detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays' performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

New prototype scintillator detector for the Tibet ASγ experiment

NASA Astrophysics Data System (ADS)

Zhang, Y.; Gou, Q.-B.; Cai, H.; Chen, T.-L.; Danzengluobu; Feng, C.-F.; Feng, Y.-L.; Feng, Z.-Y.; Gao, Q.; Gao, X.-J.; Guo, Y.-Q.; Guo, Y.-Y.; Hou, Y.-Y.; Hu, H.-B.; Jin, C.; Li, H.-J.; Liu, C.; Liu, M.-Y.; Qian, X.-L.; Tian, Z.; Wang, Z.; Xue, L.; Zhang, X.-Y.; Zhang, Xi-Ying

2017-11-01

The hybrid Tibet AS array was successfully constructed in 2014. It has 4500 m2 underground water Cherenkov pools used as the muon detector (MD) and 789 scintillator detectors covering 36900 m2 as the surface array. At 100 TeV, cosmic-ray background events can be rejected by approximately 99.99%, according to the full Monte Carlo (MC) simulation for γ-ray observations. In order to use the muon detector efficiently, we propose to extend the surface array area to 72900 m2 by adding 120 scintillator detectors around the current array to increase the effective detection area. A new prototype scintillator detector is developed via optimizing the detector geometry and its optical surface, by selecting the reflective material and adopting dynode readout. {This detector can meet our physics requirements with a positional non-uniformity of the output charge within 10% (with reference to the center of the scintillator), time resolution FWHM of ~2.2 ns, and dynamic range from 1 to 500 minimum ionization particles}.

The use of integrated focal plane array technologies in laser microsatellite networks

NASA Astrophysics Data System (ADS)

Arnon, Shlomi

2004-10-01

Clustering micro satellites in cooperative fly formation constellations leads to high-performance space systems. The only way to achieve high-speed communication between the satellites is by a laser beam with a narrow divergence angle. In order to make the communication successful three types of focal plane detector arrays are required in the communication terminal: acquisition, tracking and communication detector arrays. The acquisition detector array is used to acquire the neighbor satellite using a wide field-of-view telescope. The tracking detector provides fast, real time and accurate direction location of the neighbor satellite. Based on the information from the acquisition and tracking detectors the receiver and transmitter maintain line of sight. The development of large, fast and very sensitive focal plane detector arrays makes it possible to implement the acquisition, tracking and communication with only one focal plane detector array. By doing so it is possible to reduce dramatically the size, weight, and cost of the optics and electronics which leads to lightweight communication terminals. As a result, the satellites are smaller and lighter, which reduces the space mission cost and increases the booster efficiency. In this paper we will present an overview of the concept of integrated focal plane arrays for laser satellite communication. We also present simulation results based on real system parameters and compare different implementation options.

Stressed and unstressed Ge:Ga detector arrays for airborne astronomy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stacey, G.J.; Beeman, J.W.; Haller, E.E.

1992-11-01

We have constructed and used two dimensional arrays of both unstressed and stressed Ge:GA photoconductive detectors for far-infrared astronomy from the Kuiper Airborne Observatory (KAO). The 25 element (5 x 5) arrays are designed for a new cryogenically cooled spectrometer, the MPE/UCB Far-Infrared Imaging Fabry-Perot Interferometer (FIFI). All of the pixels for the stressed array performed well on the first flights with FIFI; 25% of the detectors in the array are more sensitive than our best single element detector, with background limited noise equivalent powers (NEPs) [approx lt] 3.0 [times] 10[sup [minus]15] W Hz[sup [minus]1/2] at 158 [mu]m and 40more » km s[sup [minus]1] spectral resolution. The average array element performs within [plus minus] 15% of this value. With a bias field of 0.1 V/cm, the average detector response is 20 [plus minus] 6 Amp/Watt at 158 [mu]m. The cutoff wavelength and response also compare well with our single element detectors. The unstressed array delivers significantly better performance than our single element detector due to the lower thermal background in the new spectrometer. The average background limited NEP at 88 [mu]m and 35 km s[sup [minus]1] spectral resolution is approx. 7 [times] 10[sup [minus]15] W Hz[sup [minus]1/2]. 18 refs., 10 figs., 2 tabs.« less

Micromachined Thermoelectric Sensors and Arrays and Process for Producing

NASA Technical Reports Server (NTRS)

Foote, Marc C. (Inventor); Jones, Eric W. (Inventor); Caillat, Thierry (Inventor)

2000-01-01

Linear arrays with up to 63 micromachined thermopile infrared detectors on silicon substrates have been constructed and tested. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi-Te and Bi-Sb-Te thermoelectric elements films. At room temperature and under vacuum these detectors exhibit response times of 99 ms, zero frequency D* values of 1.4 x 10(exp 9) cmHz(exp 1/2)/W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source. The only measured source of noise above 20 mHz is Johnson noise from the detector resistance. These results represent the best performance reported to date for an array of thermopile detectors. The arrays are well suited for uncooled dispersive point spectrometers. In another embodiment, also with Bi-Te and Bi-Sb-Te thermoelectric materials on micromachined silicon nitride membranes, detector arrays have been produced with D* values as high as 2.2 x 10(exp 9) cm Hz(exp 1/2)/W for 83 ms response times.

Optical response from lenslike semiconductor nipple arrays

NASA Astrophysics Data System (ADS)

Wu, H.-M.; Lai, C.-M.; Peng, L.-H.

2008-11-01

The authors reported the use of recessive size reduction in self-assembled polystyrene sphere mask with anisotropic etching to form lenslike nipple arrays onto the surface of silicon and gallium nitride. These devices are shown to exhibit a filling factor near to an ideal close-packed condition and paraboloidlike etch profile with slope increased proportionally to the device aspect ratio. Specular reflectivity of less than 3% was observed over the visible spectral range for the 0.35-μm-period nipple-lens arrays. Using two-dimensional rigorous coupled-wave analysis, the latter phenomenon can be ascribed to a gradual index matching mechanism accessed by a high surface-coverage semiconductor nipple array structure.

TlBr and TlBr xI 1-x crystals for γ-ray detectors

NASA Astrophysics Data System (ADS)

Churilov, Alexei V.; Ciampi, Guido; Kim, Hadong; Higgins, William M.; Cirignano, Leonard J.; Olschner, Fred; Biteman, Viktor; Minchello, Mark; Shah, Kanai S.

2010-04-01

TlBr and TlBr xI 1-x are wide bandgap semiconductor materials being investigated for applications in γ-ray spectroscopy. They have a good combination of density and atomic numbers, promising to make them very efficient detectors. Their low melting points and simple cubic and orthorhombic crystal structures are favorable for bulk crystal growth. However, these semiconductors need to be extremely pure to become useful as radiation detectors. Impurities can lead to charge trapping and scattering, reducing the charge transit lengths and limiting the detector thickness to <1 mm. Additional purification steps were implemented to improve the purity and mobility-lifetime product ( μτ) of electrons. Detector-grade TlBr with the electron μτ product of up to 6×10 -3 cm 2/V has been produced, which allowed operation of detectors up to 15 mm thickness. The ternary TlBr xI 1-x was investigated at different compositions to vary the bandgap and explore the effect of added TlI on the long term stability of detectors. The material analysis and detector characterization results are included.

Editorial

NASA Astrophysics Data System (ADS)

Bruzzi, Mara; Pace, Emanuele; Talamonti, Cinzia

2013-12-01

The 9th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD), held in Florence, at Dipartimento di Fisica ed Astronomia on October 9-12, 2012, was aimed at discussing frontier research activities in several application fields as in nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference are tracking performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), radiation effects on semiconductor materials for medical (radiotherapy dosimeters, imaging devices), astrophysics (UV, X- and γ-ray detectors) and environmental applications, microscopic defect analysis of irradiated semiconductor materials and related radiation hardening technologies. On the first day the conference hosted a short course intended to introduce fundamentals in the development of semiconductor detectors for medical applications to graduate and PhD students, post-docs and young researchers, both engineers and physicists. Directors of the School were Prof. Marta Bucciolini of the University of Florence and INFN, Italy and Dr. Carlo Civinini, INFN Firenze, Italy. Emphasis was placed on the underlying physical principles, instrument design, factors affecting performance, and applications in both the clinical and preclinical applications. The School was attended by nearly 40 students/ young researchers. We warmly thank the Directors for organizing this interesting event and the professors and researchers who gave lessons, for sharing their experience and knowledge with the students.

Integrated Avalanche Photodiode arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harmon, Eric S.

2017-04-18

The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

Integrated avalanche photodiode arrays

DOEpatents

Harmon, Eric S.

2015-07-07

The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

IXO/XMS Detector Trade-Off Study

NASA Technical Reports Server (NTRS)

Kilbourne, Caroline Anne; deKorte, P.; Smith, S.; Hoevers, H.; vdKuur, J.; Ezoe, Y.; Ullom, J.

2010-01-01

This document presents the outcome of the detector trade-off for the XMS instrument on IXO. This trade-off is part of the Cryogenic instrument Phase-A study as proposed to ESA in the Declaration of Interest SRONXMS-PL-2009-003 dated June 6, 2009. The detector consists of two components: a core array for the highest spectral resolution and an outer array to increase the field of view substantially with modest increase in the number of read-out channels. Degraded resolution of the outer array in comparison with the core array is accepted in order to make this scheme possible. The two detector components may be a single unit or separate units. These arrays comprise pixels and the components that allow them to be arrayed. Each pixel comprises a thermometer, an absorber, and the thermal links between them and to the rest of the array. These links may be interfaces or distinct components. The array infrastructure comprises the mechanical structure of the array, the arrangement of the leads, and features added to improve the integrated thermal properties of the array in the focal-plane assembly.

Si:As BIB detector arrays

NASA Technical Reports Server (NTRS)

Bharat, R.; Petroff, M. D.; Speer, J. J.; Stapelbroek, M. G.

1986-01-01

Highlights of the results obtained on arsenic-doped silicon blocked impurity band (BIB) detectors and arrays since the invention of the BIB concept a few years ago are presented. After a brief introduction and a description of the BIB concept, data will be given on single detector performance. Then different arrays that were fabricated will be described and test data presented.

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics

PubMed Central

Bae, Yoon Cheol; Lee, Ah Rahm; Baek, Gwang Ho; Chung, Je Bock; Kim, Tae Yoon; Park, Jea Gun; Hong, Jin Pyo

2015-01-01

Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. PMID:26289565

Superconducting Detectors for Study of Infant Universe

NASA Image and Video Library

2014-03-17

The BICEP2 telescope at the South Pole used a specialized array of superconducting detectors to capture polarized light from billions of years ago. The detector array is shown here, under a microscope.

Optics Research: 1975:2

DTIC Science & Technology

1975-12-31

9. The detectors were numbered as shown. Detector 2 of the HgCdTe array was turned off due to noise considerations. The array traces show an...The probe beam diagnostics were composed of a large area Au:Ge detector to measure the total probe beam transmission, and a five-element HgCdTe array...laser. ...^-J-..:..^il iitiiinnii" --- "-’ ^Ul.ü^^j .. r ■:, >iUj<&k focal spot size. Other shots show larger signals on the outside detectors

Subnanosecond Scintillation Detector

NASA Technical Reports Server (NTRS)

Hoenk, Michael (Inventor); Hennessy, John (Inventor); Hitlin, David (Inventor)

2017-01-01

A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.

Method and apparatus for electron-only radiation detectors from semiconductor materials

DOEpatents

Lund, James C.

2000-01-01

A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

Advanced Code-Division Multiplexers for Superconducting Detector Arrays

NASA Astrophysics Data System (ADS)

Irwin, K. D.; Cho, H. M.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Niemack, M. D.; Reintsema, C. D.; Schmidt, D. R.; Ullom, J. N.; Vale, L. R.

2012-06-01

Multiplexers based on the modulation of superconducting quantum interference devices are now regularly used in multi-kilopixel arrays of superconducting detectors for astrophysics, cosmology, and materials analysis. Over the next decade, much larger arrays will be needed. These larger arrays require new modulation techniques and compact multiplexer elements that fit within each pixel. We present a new in-focal-plane code-division multiplexer that provides multiplexing elements with the required scalability. This code-division multiplexer uses compact lithographic modulation elements that simultaneously multiplex both signal outputs and superconducting transition-edge sensor (TES) detector bias voltages. It eliminates the shunt resistor used to voltage bias TES detectors, greatly reduces power dissipation, allows different dc bias voltages for each TES, and makes all elements sufficiently compact to fit inside the detector pixel area. These in-focal plane code-division multiplexers can be combined with multi-GHz readout based on superconducting microresonators to scale to even larger arrays.

Advances in TlBr detector development

NASA Astrophysics Data System (ADS)

Hitomi, Keitaro; Shoji, Tadayoshi; Ishii, Keizo

2013-09-01

Thallium bromide (TlBr) is a promising compound semiconductor for fabrication of gamma-ray detectors. The attractive physical properties of TlBr lie in its high photon stopping power, high resistivity and good charge transport properties. Gamma-ray detectors fabricated from TlBr crystals have exhibited excellent spectroscopic performance. In this paper, advances in TlBr radiation detector development are reviewed with emphasis on crystal growth, detector fabrication, physical properties and detector performance.

Low-cost 20-22 GHz MIC active receiver/radiometer

NASA Technical Reports Server (NTRS)

Mollenkopf, Steven; Katehi, Linda P. B.; Rebeiz, Gabriel M.

1995-01-01

A microwave integrated circuit active receiver is built and tested at 19-25 GHz. The receiver consists of a planar CPW-fed double folded-slot antenna coupled to a six-stage MESFET (metal semiconductor field effect transistors) amplifier and followed by a planar Schottky-diode detector. The folded-slot antenna on a GaAs half-space results in a wide frequency bandwidth suitable for MMIC amplifiers. The measured system performance show a video responsivity close to 1 GV/W at 20 GHz with a 3-dB bandwidth of 1500 MHz. A novel method which uses the planar video detector after the amplifier stages as an RF (radio frequency) mixer is used to measure the noise-figure of the direct detection radiometer. The system noise figure is 4.8 dB at 22 GHz. The radiometer sensitivity to a hot/cold load is 3.8 mu V/K. The measured antenna patterns show a 90% Gaussicity at 20-22 GHz. The active MIC receiver can be integrated monolithically for low-cost applications and is well suited for millimeter-wave linear imaging arrays.

Applied Electronics and Optical Laboratory: an optimized practical course for comprehensive training on optics and electronics

NASA Astrophysics Data System (ADS)

Wang, Kaiwei; Wang, Xiaoping

2017-08-01

In order to enhance the practical education and hands-on experience of optoelectronics and eliminate the overlapping contents that previously existed in the experiments section adhering to several different courses, a lab course of "Applied Optoelectronics Laboratory" has been established in the College of Optical Science and Engineering, Zhejiang University. The course consists of two sections, i.e., basic experiments and project design. In section 1, basic experiments provide hands-on experience with most of the fundamental concept taught in the corresponding courses. These basic experiments including the study of common light sources such as He-Ne laser, semiconductor laser and solid laser and LED; the testing and analysis of optical detectors based on effects of photovoltaic effect, photoconduction effect, photo emissive effect and array detectors. In section 2, the course encourages students to build a team and establish a stand-alone optical system to realize specific function by taking advantage of the basic knowledge learned from section 1. Through these measures, students acquired both basic knowledge and the practical application skills. Moreover, interest in science has been developed among students.

A semiconductor radiation imaging pixel detector for space radiation dosimetry.

PubMed

Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

2015-07-01

Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented. Copyright © 2015 The Committee on Space Research (COSPAR). All rights reserved.

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

NASA Technical Reports Server (NTRS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. Darren; Harper, D. Al; Jhabvala, Murzy D.;

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

NASA Technical Reports Server (NTRS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. Darren; Harper, D. Al; Jhabvala, Murzy D.

2002-01-01

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC 'Pop-up' Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Method for fabricating pixelated silicon device cells

DOEpatents

Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

2015-08-18

A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

Low dark current InGaAs detector arrays for night vision and astronomy

NASA Astrophysics Data System (ADS)

MacDougal, Michael; Geske, Jon; Wang, Chad; Liao, Shirong; Getty, Jonathan; Holmes, Alan

2009-05-01

Aerius Photonics has developed large InGaAs arrays (1K x 1K and greater) with low dark currents for use in night vision applications in the SWIR regime. Aerius will present results of experiments to reduce the dark current density of their InGaAs detector arrays. By varying device designs and passivations, Aerius has achieved a dark current density below 1.0 nA/cm2 at 280K on small-pixel, detector arrays. Data is shown for both test structures and focal plane arrays. In addition, data from cryogenically cooled InGaAs arrays will be shown for astronomy applications.

Note: Operation of gamma-ray microcalorimeters at elevated count rates using filters with constraints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alpert, B. K.; Horansky, R. D.; Bennett, D. A.

Microcalorimeter sensors operated near 0.1 K can measure the energy of individual x- and gamma-ray photons with significantly more precision than conventional semiconductor technologies. Both microcalorimeter arrays and higher per pixel count rates are desirable to increase the total throughput of spectrometers based on these devices. The millisecond recovery time of gamma-ray microcalorimeters and the resulting pulse pileup are significant obstacles to high per pixel count rates. Here, we demonstrate operation of a microcalorimeter detector at elevated count rates by use of convolution filters designed to be orthogonal to the exponential tail of a preceding pulse. These filters allow operationmore » at 50% higher count rates than conventional filters while largely preserving sensor energy resolution.« less

Techniques Suitable for a Portable Wear Metal Analyzer.

DTIC Science & Technology

1981-09-01

measured by a detector. Commonly used detectors are semiconductor detectors or proportional counters. b. Energy-Dispersive XRPS . In the energy-dispersive...because the sample must be charred before the analysis. C. X-Ray Fluorescence Spectroscopy. Normally the counting time for XRPS is 100 seconds

A field-shaping multi-well avalanche detector for direct conversion amorphous selenium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldan, A. H.; Zhao, W.

2013-01-15

Purpose: A practical detector structure is proposed to achieve stable avalanche multiplication gain in direct-conversion amorphous selenium radiation detectors. Methods: The detector structure is referred to as a field-shaping multi-well avalanche detector. Stable avalanche multiplication gain is achieved by eliminating field hot spots using high-density avalanche wells with insulated walls and field-shaping inside each well. Results: The authors demonstrate the impact of high-density insulated wells and field-shaping to eliminate the formation of both field hot spots in the avalanche region and high fields at the metal-semiconductor interface. Results show a semi-Gaussian field distribution inside each well using the field-shaping electrodes,more » and the electric field at the metal-semiconductor interface can be one order-of-magnitude lower than the peak value where avalanche occurs. Conclusions: This is the first attempt to design a practical direct-conversion amorphous selenium detector with avalanche gain.« less

Assembly, characterization, and operation of large-scale TES detector arrays for ACTPol

NASA Astrophysics Data System (ADS)

Pappas, Christine Goodwin

2016-01-01

The Polarization-sensitive Receiver for the Atacama Cosmology Telescope (ACTPol) is designed to measure the Cosmic Microwave Background (CMB) temperature and polarization anisotropies on small angular scales. Measurements of the CMB temperature and polarization anisotropies have produced arguably the most important cosmological data to date, establishing the LambdaCDM model and providing the best constraints on most of its parameters. To detect the very small fluctuations in the CMB signal across the sky, ACTPol uses feedhorn-coupled Transition-Edge Sensor (TES) detectors. A TES is a superconducting thin film operated in the transition region between the superconducting and normal states, where it functions as a highly sensitive resistive thermometer. In this thesis, aspects of the assembly, characterization, and in-field operation of the ACTPol TES detector arrays are discussed. First, a novel microfabrication process for producing high-density superconducting aluminum/polyimide flexible circuitry (flex) designed to connect large-scale detector arrays to the first stage of readout is presented. The flex is used in parts of the third ACTPol array and is currently being produced for use in the AdvACT detector arrays, which will begin to replace the ACTPol arrays in 2016. Next, we describe methods and results for the in-lab and on-telescope characterization of the detectors in the third ACTPol array. Finally, we describe the ACTPol TES R(T,I) transition shapes and how they affect the detector calibration and operation. Methods for measuring the exact detector calibration and re-biasing functions, taking into account the R(T,I) transition shape, are presented.

Coded aperture imaging with uniformly redundant arrays

DOEpatents

Fenimore, Edward E.; Cannon, Thomas M.

1980-01-01

A system utilizing uniformly redundant arrays to image non-focusable radiation. The uniformly redundant array is used in conjunction with a balanced correlation technique to provide a system with no artifacts such that virtually limitless signal-to-noise ratio is obtained with high transmission characteristics. Additionally, the array is mosaicked to reduce required detector size over conventional array detectors.

Coded aperture imaging with uniformly redundant arrays

DOEpatents

Fenimore, Edward E.; Cannon, Thomas M.

1982-01-01

A system utilizing uniformly redundant arrays to image non-focusable radiation. The uniformly redundant array is used in conjunction with a balanced correlation technique to provide a system with no artifacts such that virtually limitless signal-to-noise ratio is obtained with high transmission characteristics. Additionally, the array is mosaicked to reduce required detector size over conventional array detectors.

Piezo-Phototronic Matrix via a Nanowire Array.

PubMed

Zhang, Yang; Zhai, Junyi; Wang, Zhong Lin

2017-12-01

Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

1994-01-01

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andrew James

2016-05-03

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Induced radioactivity in the forward shielding and semiconductor tracker of the ATLAS detector.

PubMed

Bĕdajánek, I; Linhart, V; Stekl, I; Pospísil, S; Kolros, A; Kovalenko, V

2005-01-01

The radioactivity induced in the forward shielding, copper collimator and semiconductor tracker modules of the ATLAS detector has been studied. The ATLAS detector is a long-term experiment which, during operation, will require to have service and access to all of its parts and components. The radioactivity induced in the forward shielding was calculated by Monte Carlo methods based on GEANT3 software tool. The results show that the equivalent dose rates on the outer surface of the forward shielding are very low (at most 0.038 microSv h(-1)). On the other hand, the equivalent dose rates are significantly higher on the inner surface of the forward shielding (up to 661 microSv h(-1)) and, especially, at the copper collimator close to the beampipe (up to 60 mSv h(-1)). The radioactivity induced in the semiconductor tracker modules was studied experimentally. The module was activated by neutrons in a training nuclear reactor and the delayed gamma ray spectra were measured. From these measurements, the equivalent dose rate on the surface of the semiconductor tracker module was estimated to be < 100 microSv h(-1) after 100 d of Large Hadron Collider (LHC) operation and 10 d of cooling.

The ROSPHERE γ-ray spectroscopy array

NASA Astrophysics Data System (ADS)

Bucurescu, D.; Căta-Danil, I.; Ciocan, G.; Costache, C.; Deleanu, D.; Dima, R.; Filipescu, D.; Florea, N.; Ghiţă, D. G.; Glodariu, T.; Ivaşcu, M.; Lică, R.; Mărginean, N.; Mărginean, R.; Mihai, C.; Negret, A.; Niţă, C. R.; Olăcel, A.; Pascu, S.; Sava, T.; Stroe, L.; Şerban, A.; Şuvăilă, R.; Toma, S.; Zamfir, N. V.; Căta-Danil, G.; Gheorghe, I.; Mitu, I. O.; Suliman, G.; Ur, C. A.; Braunroth, T.; Dewald, A.; Fransen, C.; Bruce, A. M.; Podolyák, Zs.; Regan, P. H.; Roberts, O. J.

2016-11-01

The ROmanian array for SPectroscopy in HEavy ion REactions (ROSPHERE) has been designed as a multi-detector setup dedicated to γ-ray spectroscopy studies at the Bucharest 9 MV Tandem accelerator. Consisting of up to 25 detectors (either Compton suppressed HPGe detectors or fast LaBr3(Ce) scintillator detectors) together with a state of the art plunger device, ROSPHERE is a powerful tool for lifetime measurements using the Recoil Distance Doppler Shift (RDDS) and the in-beam Fast Electronic Scintillation Timing (FEST) methods. The array's geometry, detectors, electronics and data acquisition system are described. Selected results from the first experimental campaigns are also presented.

Novel drift structures for silicon and compound semiconductor X-ray and gamma-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, B.E.; Iwanczyk, J.S.

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X-rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that the authors discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector. The main features of the silicon drift structures for X rays and light detection aremore » very small anode capacitance independent of the overall detector size, low noise, and high throughput. To take advantage of the small detector capacitance, the first stage of the electronics needs to be integrated into the detector anode. In the gamma-ray application, factors other than electronic noise dominate, and there is no need to integrate the electronics into the anode. Thus, a different drift structure is needed in conjunction with a high-Z material. The main features in this case are large active detector volume and electron-only induced signal.« less

Enhanced Vibrational Echo Correlation Spectrometer for the Study of Molecular Dynamics, Structures, and Analytical Applications

DTIC Science & Technology

2006-09-10

ultrafast IR 2D vibrational echo spectrometer. The major improvement involved a new dual MCT array detector composed of two 32 x 1 element MCT IR... detector arrays. The dual array makes it possible to improve signal- to- noise ratio in the heterodyne detection of the vibrational echo signal. To...are dispersed in a monochromator and then detected with the new 2x32-element MCT IR array detector . As discussed above, the function of the local

Optical-Microwave Interactions in Semiconductor Devices.

DTIC Science & Technology

1981-03-01

Interdigital Photoconductors ( IDPC ) ......... ..... 112 G. Conclusions.. ....... .. 120 6 CONCLUSIONS AND RECOMMENDATIONS FOR FUTURE WORK . 121...The detector developed at the Hughes Research Laboratories ( IDPC ) involves placing an interdigital metal electrode 53- 5 5 structure on top of a F...easier to perform with the IDPC detector. We believe the interdigital photoconductive detector has many advantages over existing detectors. First, the

Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

NASA Astrophysics Data System (ADS)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

2018-01-01

Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

Lung counting: comparison of detector performance with a four detector array that has either metal or carbon fibre end caps, and the effect on mda calculation.

PubMed

Ahmed, Asm Sabbir; Hauck, Barry; Kramer, Gary H

2012-08-01

This study described the performance of an array of high-purity Germanium detectors, designed with two different end cap materials-steel and carbon fibre. The advantages and disadvantages of using this detector type in the estimation of the minimum detectable activity (MDA) for different energy peaks of isotope (152)Eu were illustrated. A Monte Carlo model was developed to study the detection efficiency for the detector array. A voxelised Lawrence Livermore torso phantom, equipped with lung, chest plates and overlay plates, was used to mimic a typical lung counting protocol with the array of detectors. The lung of the phantom simulated the volumetric source organ. A significantly low MDA was estimated for energy peaks at 40 keV and at a chest wall thickness of 6.64 cm.

Feedhorn-Coupled Transition-Edge Superconducting Bolometer Arrays for Cosmic Microwave Background Polarimetry

NASA Technical Reports Server (NTRS)

Hubmayr, J.; Austermann, J.; Beall, J.; Becker, D.; Cho, H.-M.; Datta, R.; Duff, S. M.; Grace, E.; Halverson, N.; Henderson, S. W.;

Coherent Detector Arrays for Continuum and Spectral Line Applications

NASA Technical Reports Server (NTRS)

Gaier, Todd C.

2006-01-01

This viewgraph presentation reviews the requirements for improved coherent detector arrays for use in continuum and spectral line applications. With detectors approaching fundamental limits, large arrays offer the only path to sensitivity improvement. Monolithic Microwave Integrated Circuit (MMIC) technology offers a straightforward path to massive focal plane millimeter wave arrays: The technology will readily support continuum imagers, polarimeters and spectral line receivers from 30-110 GHz. Science programs, particularly large field blind surveys will benefit from simultaneous observations of hundreds or thousands of pixels 1000 element array is competitive with a cost less than $2M.

Performance of A Compact Multi-crystal High-purity Germanium Detector Array for Measuring Coincident Gamma-ray Emissions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, Chris; Daigle, Stephen; Buckner, Matt

2015-02-18

The Multi-sensor Airborne Radiation Survey (MARS) detector is a 14-crystal array of high-purity germanium (HPGe) detectors housed in a single cryostat. The array was used to measure the astrophysical S-factor for the 14N(p,γ) 15O* reaction for several transition energies at an effective center of mass energy of 163 keV. Owing to the segmented nature of the MARS detector, the effect of gamma-ray summing was greatly reduced in comparison to past experiments which utilized large, single-crystal detectors. The new S-factor values agree within the uncertainties with the past measurements. Details of the analysis and detector performance will be presented.

Kilopixel Pop-Up Bolometer Arrays for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Chervenak, J. A.; Wollack, E.; Henry, R.; Moseley, S. H.; Niemack, M.; Staggs, S.; Page, L.; Doriese, R.; Hilton, G. c.; Irwin, K. D.

2007-01-01

The recently deployed Atacama Cosmology Telescope (ACT) anticipates first light on its kilopixel array of close-packed transition-edge-sensor bolometers in November of 2007. The instrument will represent a full implementation of the next-generation, large format arrays for millimeter wave astronomy that use superconducting electronics and detectors. Achieving the practical construction of such an array is a significant step toward producing advanced detector arrays for future SOFIA instruments. We review the design considerations for the detector array produced for the ACT instrument. The first light imager consists of 32 separately instrumented 32-channel pop-up bolometer arrays (to create a 32x32 filled array of mm-wave sensors). Each array is instrumented with a 32-channel bias resistor array, Nyquist filter array, and time-division SQUID multiplexer. Each component needed to be produced in relatively large quantities with suitable uniformity to meet tolerances for array operation. An optical design was chosen to maximize absorption at the focal plane while mitigating reflections and stray light. The pop-up geometry (previously implemented with semiconducting detectors and readout on the SHARC II and HAWC instruments) enabled straightforward interface of the superconducting bias and readout circuit with the 2D array of superconducting bolometers. The array construction program balanced fabrication challenges with assembly challenges to deliver the instrument in a timely fashion. We present some of the results of the array build and characterization of its performance.

MOS Circuitry Would Detect Low-Energy Charged Particles

NASA Technical Reports Server (NTRS)

Sinha, Mahadeva; Wadsworth, Mark

2003-01-01

Metal oxide semiconductor (MOS) circuits for measuring spatially varying intensities of beams of low-energy charged particles have been developed. These circuits are intended especially for use in measuring fluxes of ions with spatial resolution along the focal planes of mass spectrometers. Unlike prior mass spectrometer focal-plane detectors, these MOS circuits would not be based on ion-induced generation of electrons, and photons; instead, they would be based on direct detection of the electric charges of the ions. Hence, there would be no need for microchannel plates (for ion-to-electron conversion), phosphors (for electron-to-photon conversion), and photodetectors (for final detection) -- components that degrade spatial resolution and contribute to complexity and size. The developmental circuits are based on linear arrays of charge-coupled devices (CCDs) with associated readout circuitry (see figure). They resemble linear CCD photodetector arrays, except that instead of a photodetector, each pixel contains a capacitive charge sensor. The capacitor in each sensor comprises two electrodes (typically made of aluminum) separated by a layer of insulating material. The exposed electrode captures ions and accumulates their electric charges during signal-integration periods.

National Array of Neutron Detectors (NAND): A versatile tool for nuclear reaction studies

NASA Astrophysics Data System (ADS)

Golda, K. S.; Jhingan, A.; Sugathan, P.; Singh, Hardev; Singh, R. P.; Behera, B. R.; Mandal, S.; Kothari, A.; Gupta, Arti; Zacharias, J.; Archunan, M.; Barua, P.; Venkataramanan, S.; Bhowmik, R. K.; Govil, I. M.; Datta, S. K.; Chatterjee, M. B.

2014-11-01

The first phase of the National Array of Neutron Detectors (NAND) consisting of 26 neutron detectors has been commissioned at the Inter University Accelerator Centre (IUAC), New Delhi. The motivation behind setting up of such a detector system is the need for more accurate and efficient study of reaction mechanisms in the projectile energy range of 5-8 MeV/n using heavy ion beams from a 15 UD Pelletron and an upgraded LINAC booster facility at IUAC. The above detector array can be used for inclusive as well as exclusive measurements of reaction products of which at least one product is a neutron. While inclusive measurements can be made using only the neutron detectors along with the time of flight technique and a pulsed beam, exclusive measurements can be performed by detecting neutrons in coincidence with charged particles and/or fission fragments detected with ancillary detectors. The array can also be used for neutron tagged gamma-ray spectroscopy in (HI, xn) reactions by detecting gamma-rays in coincidence with the neutrons in a compact geometrical configuration. The various features and the performance of the different aspects of the array are described in the present paper.

Compound semiconductor detectors for X-ray astronomy: Spectroscopic measurements and material characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bavdaz, M.; Kraft, S.; Peacock, A.

1998-12-31

The use of some specific compound semiconductors in the fabrication of high energy X-ray detectors shows significant potential for X-ray astrophysics space missions. The authors are currently investigating three high purity crystals--CdZnTe, GaAs and TlBr--as the basis for future hard X-ray detectors (above 10 keV). In this paper the authors present the first results on CdZnTe and GaAs based detectors and evaluate the factors currently still constraining the performance. Energy resolutions (FWHM) of 0.9 keV and 1.1 keV at 14 keV and 60 keV, respectively, have been obtained with an epitaxial GaAs detector, while 0.7 keV and 1.5 keV FWHMmore » were measured at the same energies with a CdZnTe detector. Based on these results it is clear, that the next generation of X-ray astrophysics missions now in the planning phase may well consider extending the photon energy range up to {approximately} 100 keV by use of efficient detectors with reasonable spectroscopic capabilities.« less

A novel optical detector concept for dedicated and multi-modality in vivo small animal imaging

NASA Astrophysics Data System (ADS)

Peter, Jörg; Schulz, Ralf B.; Unholtz, Daniel; Semmler, Wolfhard

2007-07-01

An optical detector suitable for inclusion in tomographic arrangements for non-contact in vivo bioluminescence and fluorescence imaging applications is proposed. It consists of a microlens array (MLA) intended for field-of-view definition, a large-field complementary metal-oxide-semiconductor (CMOS) chip for light detection, a septum mask for cross-talk suppression, and an exchangeable filter to block excitation light. Prototype detector units with sensitive areas of 2.5 cm x 5 cm each were assembled. The CMOS sensor constitutes a 512 x 1024 photodiode matrix at 48 μm pixel pitch. Refractive MLAs with plano-convex lenses of 480 μm in diameter and pitch were selected resulting in a 55 x 105 lens matrix. The CMOS sensor is aligned on the focal plane of the MLA at 2.15mm distance. To separate individual microlens images an opaque multi-bore septum mask of 2.1mm in thickness and bore diameters of 400 μm at 480 μm pitch, aligned with the lens pattern, is placed between MLA and CMOS. Intrinsic spatial detector resolution and sensitivity was evaluated experimentally as a function of detector-object distance. Due to its small overall dimensions such detectors can be favorably packed for tomographic imaging (optical diffusion tomography, ODT) yielding complete 2 π field-of-view coverage. We also present a design study of a device intended to simultaneously image positron labeled substrates (positron emission tomography, PET) and optical molecular probes in small animals such as mice and rats. It consists of a cylindrical allocation of optical detector units which form an inner detector ring while PET detector blocks are mounted in radial extension, those gaining complementary information in a single, intrinsically coregistered experimental data acquisition study. Finally, in a second design study we propose a method for integrated optical and magnetic resonance imaging (MRI) which yields in vivo functional/molecular information that is intrinsically registered with the anatomy of the image object.

Modeling Charge Collection in Detector Arrays

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Pickel, J. C.

2003-01-01

A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

Enhanced THz extinction in arrays of resonant semiconductor particles.

PubMed

Schaafsma, Martijn C; Georgiou, Giorgos; Rivas, Jaime Gómez

2015-09-21

We demonstrate experimentally the enhanced THz extinction by periodic arrays of resonant semiconductor particles. This phenomenon is explained in terms of the radiative coupling of localized resonances with diffractive orders in the plane of the array (Rayleigh anomalies). The experimental results are described by numerical calculations using a coupled dipole model and by Finite-Difference in Time-Domain simulations. An optimum particle size for enhancing the extinction efficiency of the array is found. This optimum is determined by the frequency detuning between the localized resonances in the individual particles and the Rayleigh anomaly. The extinction calculations and measurements are also compared to near-field simulations illustrating the optimum particle size for the enhancement of the near-field.

Characterization of AlMn TES Impedance, Noise, and Optical Efficiency in the First 150 mm Multichroic Array for Advanced ACTPol

NASA Technical Reports Server (NTRS)

Crowley, Kevin T.; Choi, Steve K.; Kuan, Jeffrey; Austermann, Jason E.; Beall, James A.; Datta, Rahul; Duff, Shannon M.; Gallardo, Patricia A.; Hasselfield, Matthew; Henderson, Shawn W.;

Assessment study of infrared detector arrays for low-background astronomical research

NASA Technical Reports Server (NTRS)

Ando, K. J.

1978-01-01

The current state-of-the-art of infrared detector arrays employing charge coupled devices (CCD) or charge injection devices (CID) readout are assessed. The applicability, limitations and potentials of such arrays under the low-background astronomical observing conditions of interest for SIRFT (Shuttle Infrared Telescope Facility) are determined. The following are reviewed: (1) monolithic extrinsic arrays; (2) monolithic intrinsic arrays; (3) charge injection devices; and (4) hybrid arrays.

Photoacoustic projection imaging using an all-optical detector array

NASA Astrophysics Data System (ADS)

Bauer-Marschallinger, J.; Felbermayer, K.; Berer, T.

2018-02-01

We present a prototype for all-optical photoacoustic projection imaging. By generating projection images, photoacoustic information of large volumes can be retrieved with less effort compared to common photoacoustic computed tomography where many detectors and/or multiple measurements are required. In our approach, an array of 60 integrating line detectors is used to acquire photoacoustic waves. The line detector array consists of fiber-optic MachZehnder interferometers, distributed on a cylindrical surface. From the measured variation of the optical path lengths of the interferometers, induced by photoacoustic waves, a photoacoustic projection image can be reconstructed. The resulting images represent the projection of the three-dimensional spatial light absorbance within the imaged object onto a two-dimensional plane, perpendicular to the line detector array. The fiber-optic detectors achieve a noise-equivalent pressure of 24 Pascal at a 10 MHz bandwidth. We present the operational principle, the structure of the array, and resulting images. The system can acquire high-resolution projection images of large volumes within a short period of time. Imaging large volumes at high frame rates facilitates monitoring of dynamic processes.

Frequency control using a complex effective reflectivity in laterally coupled semiconductor laser arrays.

PubMed

Griffel, G; Marshall, W K; Gravé, I; Yariv, A; Nabiev, R

1991-08-01

Frequency selectivity of a novel type of multielement, multisection laterally coupled semiconductor laser array is studied using the round-trip method. It is found that such a structure should lead to a strong frequency selectivity owing to a periodic dependency of the threshold gain on the frequency. A gain-guided two-coupledcavity device was fabricated. The experimental results show excellent agreement with the theoretical prediction.

The Development and Fabrication of an Implantable, Multiplexed, Semiconductor Multielectrode Array.

DTIC Science & Technology

1983-12-01

ILt D. C. Denton . Their individual and collective efforts in designing, fabricating, and testing an implantable array resulted in a semiconductor device... contaminating sodium ions were attracted by the electrical field developed by the JFET pinch-off voltage. These sodium ions produced leakage paths...34 was implanted in a biological specimen (dog) by Hensley and Denton (Ref 5). Summary of Current Knowledge Hensley and Denton showed the feasibility

Method for fabricating an interconnected array of semiconductor devices

DOEpatents

Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

1989-10-10

Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

High-resolution parallel-detection sensor array using piezo-phototronics effect

DOEpatents

Wang, Zhong L.; Pan, Caofeng

2015-07-28

A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

II-VI Narrow-Bandgap Semiconductors for Optoelectronics

NASA Astrophysics Data System (ADS)

Baker, Ian

The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

Design Study of DESCANT - DEuterated SCintillator Array for Neutron Tagging

NASA Astrophysics Data System (ADS)

Wong, James; Garrett, P. E.

2007-10-01

The fusion-evaporation reaction has been a useful tool for studying nuclei. A program of such reactions is being planned to take place at the TRIUMF facility in Vancouver, Canada using the TIGRESS array of gamma-ray detectors. A particular advantage of using these reactions is that they probe nuclei at moderate-to-high angular momenta. It would be of great interest to extend the study of high-spin states to neutron-rich systems. Following the formation of the fused compound system, the highly-excited state may lose energy by ``evaporating'' particles. Neutron evaporation is the predominant decay mode from neutron-rich compound systems so neutron detectors will be required. The probability of neutrons multiple scattering is quite high so a detector array must be able to differentiate between multiple neutrons evaporating from the reaction and a single neutron scattering multiple times. To address this issue we investigate the use of a novel neutron detector array -- one based on an array of deuterated liquid scintillators as neutron detectors. Results from early feasibility tests will be presented, along with the status of our GEANT4 simulations of the array performance.

Fabrication and Testing of a Modular Micro-Pocket Fission Detector Instrumentation System for Test Nuclear Reactors

NASA Astrophysics Data System (ADS)

Reichenberger, Michael A.; Nichols, Daniel M.; Stevenson, Sarah R.; Swope, Tanner M.; Hilger, Caden W.; Roberts, Jeremy A.; Unruh, Troy C.; McGregor, Douglas S.

2018-01-01

Advancements in nuclear reactor core modeling and computational capability have encouraged further development of in-core neutron sensors. Measurement of the neutron-flux distribution within the reactor core provides a more complete understanding of the operating conditions in the reactor than typical ex-core sensors. Micro-Pocket Fission Detectors have been developed and tested previously but have been limited to single-node operation and have utilized highly specialized designs. The development of a widely deployable, multi-node Micro-Pocket Fission Detector assembly will enhance nuclear research capabilities. A modular, four-node Micro-Pocket Fission Detector array was designed, fabricated, and tested at Kansas State University. The array was constructed from materials that do not significantly perturb the neutron flux in the reactor core. All four sensor nodes were equally spaced axially in the array to span the fuel-region of the reactor core. The array was filled with neon gas, serving as an ionization medium in the small cavities of the Micro-Pocket Fission Detectors. The modular design of the instrument facilitates the testing and deployment of numerous sensor arrays. The unified design drastically improved device ruggedness and simplified construction from previous designs. Five 8-mm penetrations in the upper grid plate of the Kansas State University TRIGA Mk. II research nuclear reactor were utilized to deploy the array between fuel elements in the core. The Micro-Pocket Fission Detector array was coupled to an electronic support system which has been specially developed to support pulse-mode operation. The Micro-Pocket Fission Detector array composed of four sensors was used to monitor local neutron flux at a constant reactor power of 100 kWth at different axial locations simultaneously. The array was positioned at five different radial locations within the core to emulate the deployment of multiple arrays and develop a 2-dimensional measurement of neutron flux in the reactor core.

Semiconductor P-I-N detector

DOEpatents

Sudharsanan, Rengarajan; Karam, Nasser H.

2001-01-01

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Development of megapixel HgCdTe detector arrays with 15 micron cutoff

NASA Astrophysics Data System (ADS)

Forrest, William J.; McMurtry, Craig W.; Dorn, Meghan L.; Pipher, Judith; Cabrera, Mario S.

2016-06-01

I. HistoryHgCdTe is a versatile II-VI semiconductor with a direct-bandgap tunable via the Hg:Cd ratio. Hg:Cd ratio = 53:47 (2.5 micron cutoff) was used on the NICMOS instrument on HST and the 2MASS. Increasing Hg:Cd ratio to 70:30 leads to a 5.4 micron cutoff, utilized in NEOWISE and many JWST instruments. Bailey, Wu et al. (1998) motivated extending this technology to 10 microns and beyond. Bacon, McMurtry et al. (2003, 2004) indicated significant progress toward this longwave (LW) goal.Warm-Spitzer has pioneered passive cooling to below 30 K in space, enabling the JWST mission.II. CurrentNASA's proposed NEOcam mission selected HgCdTe with a 10.6 micron cutoff because it promises natural Zodiacal background limited sensitivity with modest cooling (40 K). Teledyne Imaging Systems (TIS) is producing megapixel arrays with excellent performance (McMurtry, Lee, Dorn et al. (2013)) for this mission.III. FutureModest cooling requirements (circa 30 K) coupled with megapixel arrays and LW sensitivity in the thermal IR make HgCdTe attractive for many infrared instruments. For instance, the spectral signature of a terrestrial planet orbiting in the habitable zone of a nearby star will be the deep and wide absorption by CO_2 centered at 15 microns (Seager and Deming, 2010). LW instruments can enhance Solar System missions, such as exploration of the Enceladus geysers (Spencer, Buratti et al. 2006). Passive cooling will be adequate for these missions. Modern ground-based observatories will benefit from infrared capability out to the N band (7.5-13.6 microns). The required detector temperatures (30-40 K) are easily achievable using commercially available mechanical cryo-coolers (refrigerators).IV. Progress to dateTIS is developing megapixel HgCdTe arrays sensitive out to 15 microns under the direction of the University of Rochester. As a first step, we have produced arrays with a 13 micron cutoff. The initial measurements indicate very promising performance. We will present the measurements of dark current, noise, and quantum efficiency for these devices and discuss our plans to reach our 15 micron target wavelength.

Development of megapixel HgCdTe detector arrays with 15 micron cutoff

NASA Astrophysics Data System (ADS)

Forrest, William J.; McMurtry, Craig W.; Dorn, Meghan; Pipher, Judith; Cabrera, Mario S.

2016-10-01

I. HistoryHgCdTe is a versatile II-VI semiconductor with a direct-bandgap tunable via the Hg:Cd ratio. Hg:Cd ratio = 53:47 (2.5 micron cutoff) was used on the NICMOS instrument on HST and the 2MASS. Increasing Hg:Cd ratio to 70:30 leads to a 5.4 micron cutoff, utilized in NEOWISE and many JWST instruments. Bailey, Wu et al. (1998) motivated extending this technology to 10 microns and beyond. Bacon, McMurtry et al. (2003, 2004) indicated significant progress toward this longwave (LW) goal.Warm-Spitzer has pioneered passive cooling to below 30 K in space, enabling the JWST mission.II. CurrentNASA's proposed NEOcam mission selected HgCdTe with a 10.6 micron cutoff because it promises natural Zodiacal background limited sensitivity with modest cooling (40 K). Teledyne Imaging Systems (TIS) is producing megapixel arrays with excellent performance (McMurtry, Lee, Dorn et al. (2013)) for this mission.III. FutureModest cooling requirements (circa 30 K) coupled with megapixel arrays and LW sensitivity in the thermal IR make HgCdTe attractive for many infrared instruments. For instance, the spectral signature of a terrestrial planet orbiting in the habitable zone of a nearby star will be the deep and wide absorption by CO_2 centered at 15 microns (Seager and Deming, 2010). LW instruments can enhance Solar System missions, such as exploration of the Enceladus geysers (Spencer, Buratti et al. 2006). Passive cooling will be adequate for these missions. Modern ground-based observatories will benefit from infrared capability out to the N band (7.5-13.6 microns). The required detector temperatures (30-40 K) are easily achievable using commercially available mechanical cryo-coolers (refrigerators).IV. Progress to dateTIS is developing megapixel HgCdTe arrays sensitive out to 15 microns under the direction of the University of Rochester. As a first step, we have produced arrays with a 13 micron cutoff. The initial measurements indicate very promising performance. We will present the measurements of dark current, noise, and quantum efficiency for these devices and discuss our plans to reach our 15 micron target wavelength.

Large Format Arrays for Far Infrared and Millimeter Astronomy

NASA Technical Reports Server (NTRS)

Moseley, Harvey

2004-01-01

Some of the most compelling questions in modem astronomy are best addressed with submillimeter and millimeter observations. The question of the role of inflation in the early evolution of the universe is best addressed with large sensitive arrays of millimeter polarimeters. The study of the first generations of galaxies requires sensitive submillimeter imaging, which can help us to understand the history of energy release and nucleosynthesis in the universe. Our ability to address these questions is dramatically increasing, driven by dramatic steps in the sensitivity and size of available detector arrays. While the MIPS instrument on the SIRTF mission will revolutionize far infrared astronomy with its 1024 element array of photoconductors, thermal detectors remain the dominant technology for submillimeter and millimeter imaging and polarimetry. The last decade has seen the deployment of increasingly large arrays of bolometers, ranging from the 48 element arrays deployed on the KAO in the late 198Os, to the SHARC and SCUBA arrays in the 1990s. The past years have seen the deployment of a new generation of larger detector arrays in SHARC II (384 channels) and Bolocam (144 channels). These detectors are in operation and are beginning to make significant impacts on the field. Arrays of sensitive submillimeter bolometers on the SPIRE instrument on Herschel will allow the first large areas surveys of the sky, providing important insight into the evolution of galaxies. The next generation of detectors, led by SCUBA II, will increase the focal scale of these instruments by an order of magnitude. Two major missions are being planned by NASA for which further development of long wavelength detectors is essential, The SAFlR mission, a 10-m class telescope with large arrays of background limited detectors, will extend our reach into the epoch of initial galaxy formation. A major goal of modem cosmology is to test the inflationary paradigm in the early evolution of the universe. To this end, a mission is planned to detect the imprint of inflation on the CMB by precision measurement of its polarization. This work requires very large arrays of sensitive detectors which can provide unprecedented control of a wide range of systematic errors, given the small amplitude of the signal of interest. We will describe the current state of large format detector arrays, the performance requirements set by the new missions, and the different approaches being developed in the community to meet these requirements. We are confident that within a decade, these developments will lead to dramatic advances in our understanding of the evolution of the universe.

Pulse-height defect due to electron interaction in dead layers of Ge/Li/ gamma-ray detectors

NASA Technical Reports Server (NTRS)

Larsen, R. N.; Strauss, M. G.

1969-01-01

Study shows the pulse-height degradation of gamma ray spectra in germanium/lithium detectors to be due to electron interaction in the dead layers that exist in all semiconductor detectors. A pulse shape discrimination technique identifies and eliminates these defective pulses.

Detection of fast neutrons from shielded nuclear materials using a semiconductor alpha detector.

PubMed

Pöllänen, R; Siiskonen, T

2014-08-01

The response of a semiconductor alpha detector to fast (>1 MeV) neutrons was investigated by using measurements and simulations. A polyethylene converter was placed in front of the detector to register recoil protons generated by elastic collisions between neutrons and hydrogen nuclei of the converter. The developed prototype equipment was tested with shielded radiation sources. The low background of the detector and insensitivity to high-energy gamma rays above 1 MeV are advantages when the detection of neutron-emitting nuclear materials is of importance. In the case of a (252)Cf neutron spectrum, the intrinsic efficiency of fast neutron detection was determined to be 2.5×10(-4), whereas three-fold greater efficiency was obtained for a (241)AmBe neutron spectrum. Copyright © 2014 Elsevier Ltd. All rights reserved.

Design and performance of dual-polarization lumped-element kinetic inductance detectors for millimeter-wave polarimetry

NASA Astrophysics Data System (ADS)

McCarrick, H.; Jones, G.; Johnson, B. R.; Abitbol, M. H.; Ade, P. A. R.; Bryan, S.; Day, P.; Essinger-Hileman, T.; Flanigan, D.; Leduc, H. G.; Limon, M.; Mauskopf, P.; Miller, A.; Tucker, C.

2018-02-01

Aims: Lumped-element kinetic inductance detectors (LEKIDs) are an attractive technology for millimeter-wave observations that require large arrays of extremely low-noise detectors. We designed, fabricated and characterized 64-element (128 LEKID) arrays of horn-coupled, dual-polarization LEKIDs optimized for ground-based CMB polarimetry. Our devices are sensitive to two orthogonal polarizations in a single spectral band centered on 150 GHz with Δν/ν = 0.2. The 65 × 65 mm square arrays are designed to be tiled into the focal plane of an optical system. We demonstrate the viability of these dual-polarization LEKIDs with laboratory measurements. Methods: The LEKID modules are tested with an FPGA-based readout system in a sub-kelvin cryostat that uses a two-stage adiabatic demagnetization refrigerator. The devices are characterized using a blackbody and a millimeter-wave source. The polarization properties are measured with a cryogenic stepped half-wave plate. We measure the resonator parameters and the detector sensitivity, noise spectrum, dynamic range, and polarization response. Results: The resonators have internal quality factors approaching 1 × 106. The detectors have uniform response between orthogonal polarizations and a large dynamic range. The detectors are photon-noise limited above 1 pW of absorbed power. The noise-equivalent temperatures under a 3.4 K blackbody load are <100 μK √s. The polarization fractions of detectors sensitive to orthogonal polarizations are >80%. The entire array is multiplexed on a single readout line, demonstrating a multiplexing factor of 128. The array and readout meet the requirements for 4 arrays to be read out simultaneously for a multiplexing factor of 512. Conclusions: This laboratory study demonstrates the first dual-polarization LEKID array optimized specifically for CMB polarimetry and shows the readiness of the detectors for on-sky observations.

Multi-anode microchannel arrays

NASA Technical Reports Server (NTRS)

Timothy, J. G.; Bybee, R. L.

1977-01-01

A development program is currently being undertaken to produce photon-counting detector arrays which are suitable for use in both ground-based and space-borne instruments and which utilize the full sensitivity, dynamic range and photometric stability of the microchannel array plate (MCP). The construction of the detector arrays and the status of the development program are described.

Stable room-temperature thallium bromide semiconductor radiation detectors

NASA Astrophysics Data System (ADS)

Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

2017-10-01

Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Semiconductor@metal-organic framework core-shell heterostructures: a case of ZnO@ZIF-8 nanorods with selective photoelectrochemical response.

PubMed

Zhan, Wen-wen; Kuang, Qin; Zhou, Jian-zhang; Kong, Xiang-jian; Xie, Zhao-xiong; Zheng, Lan-sun

2013-02-06

Metal-organic frameworks (MOFs) and related material classes are attracting considerable attention for their applications in gas storage/separation as well as catalysis. In contrast, research concerning potential uses in electronic devices (such as sensors) is in its infancy, which might be due to a great challenge in the fabrication of MOFs and semiconductor composites with well-designed structures. In this paper, we proposed a simple self-template strategy to fabricate metal oxide semiconductor@MOF core-shell heterostructures, and successfully obtained freestanding ZnO@ZIF-8 nanorods as well as vertically standing arrays (including nanorod arrays and nanotube arrays). In this synthetic process, ZnO nanorods not only act as the template but also provide Zn(2+) ions for the formation of ZIF-8. In addition, we have demonstrated that solvent composition and reaction temperature are two crucial factors for successfully fabricating well-defined ZnO@ZIF-8 heterostructures. As we expect, the as-prepared ZnO@ZIF-8 nanorod arrays display distinct photoelectrochemical response to hole scavengers with different molecule sizes (e.g., H(2)O(2) and ascorbic acid) owing to the limitation of the aperture of the ZIF-8 shell. Excitingly, such ZnO@ZIF-8 nanorod arrays were successfully applied to the detection of H(2)O(2) in the presence of serous buffer solution. Therefore, it is reasonable to believe that the semiconductor@MOFs heterostructure potentially has promising applications in many electronic devices including sensors.

Design of bent waveguide semiconductor lasers using nonlinear equivalent chirp

NASA Astrophysics Data System (ADS)

Li, Lianyan; Shi, Yuechun; Zhang, Yunshan; Chen, Xiangfei

2018-01-01

Reconstruction equivalent chirp (REC) technique is widely used in the design and fabrication of semiconductor laser arrays and tunable lasers with low cost and high wavelength accuracy. Bent waveguide is a promising method to suppress the zeroth order resonance, which is an intrinsic problem in REC technique. However, it may introduce basic grating chirp and deteriorate the single longitudinal mode (SLM) property of the laser. A nonlinear equivalent chirp pattern is proposed in this paper to compensate the grating chirp and improve the SLM property. It will benefit the realization of low-cost Distributed feedback (DFB) semiconductor laser arrays with accurate lasing wavelength.

First data with the Hybrid Array of Gamma Ray Detector (HAGRiD)

NASA Astrophysics Data System (ADS)

Smith, K.; Baugher, T.; Burcher, S.; Carter, A. B.; Cizewski, J. A.; Chipps, K. A.; Febbraro, M.; Grzywacz, R.; Jones, K. L.; Munoz, S.; Pain, S. D.; Paulauskas, S. V.; Ratkiewicz, A.; Schmitt, K. T.; Thornsberry, C.; Toomey, R.; Walter, D.; Willoughby, H.

2018-01-01

The structure of nuclei provides insight into astrophysical reaction rates that are difficult to measure directly. These studies are often performed with transfer reactions and β-decay measurements. These experiments benefit from particle-γ coincidence measurements which provide information beyond that of particle detection alone. The Hybrid Array of Gamma Ray Detectors (HAGRiD) of LaBr3(Ce) scintillators has been designed with this purpose in mind. The design of the array permits it to be coupled with particle detector systems, such as the Oak Ridge Rutgers University Barrel Array (ORRUBA) of silicon detectors and the Versatile Array of Neutron Detectors at Low Energy (VANDLE). It is also designed to operate with the Jet Experiments in Nuclear Structure and Astrophysics (JENSA) advanced target system. HAGRiD's design avoids compromising the charged-particle angular resolution due to compact geometries which are often used to increase the γ efficiency in other systems. First experiments with HAGRiD coupled to VANDLE as well as ORRUBA and JENSA are discussed.

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors

NASA Technical Reports Server (NTRS)

Stevenson, T. R.; Hsieh, W.-T.; Li, M. J.; Stahle, C. M.; Wollack, E. J.; Schoelkopf, R. J.; Krebs, Carolyn (Technical Monitor)

2002-01-01

The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Multi-anode microchannel arrays. [for use in ground-based and spaceborne telescopes

NASA Technical Reports Server (NTRS)

Timothy, J. G.; Mount, G. H.; Bybee, R. L.

1979-01-01

The Multi-Anode Microchannel Arrays (MAMA's) are a family of photoelectric, photon-counting array detectors being developed for use in instruments on both ground-based and space-borne telescopes. These detectors combine high sensitivity and photometric stability with a high-resolution imaging capability. MAMA detectors can be operated in a windowless configuration at extreme-ultraviolet and soft X-ray wavelengths or in a sealed configuration at ultraviolet and visible wavelengths. Prototype MAMA detectors with up to 512 x 512 pixels are now being tested in the laboratory and telescope operation of a simple (10 x 10)-pixel visible-light detector has been initiated. The construction and modes-of-operation of the MAMA detectors are briefly described and performance data are presented.

Development of nine-channel 10-micrometer (Hg, Cd)Te pushbroom IR/CCD system

NASA Technical Reports Server (NTRS)

White, W. J.; Wasa, S.

1977-01-01

The engineering development of the 9-channel detector array is documented. The development of the array demonstrates the feasibility of a self scanned multi-element infrared detector focal plane. Procedures for operating the array are outlined.

Single-element optical injection locking of diode-laser arrays

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1988-01-01

By optically injecting a single end-element of a semiconductor laser array, both the spatial and spectral emission characteristics of the entire laser array is controlled. With the output of the array locked, the far-field emission angle of the array is continuously scanned over several degrees by varying the injection frequency.

Low-background detector arrays for infrared astronomy

NASA Technical Reports Server (NTRS)

Mccreight, C. R.; Estrada, J. A.; Goebel, J. H.; Mckelvey, M. E.; Mckibbin, D. D.; Mcmurray, R. E., Jr.; Weber, T. T.

1989-01-01

The status of a program which develops and characterizes integrated infrared (IR) detector array technology for space astronomical applications is described. The devices under development include intrinsic, extrinsic silicon, and extrinsic germanium detectors, coupled to silicon readout electronics. Low-background laboratory test results include measurements of responsivity, noise, dark current, temporal response, and the effects of gamma-radiation. In addition, successful astronomical imagery has been obtained on some arrays from this program. These two aspects of the development combine to demonstrate the strong potential for integrated array technology for IR space astronomy.

Image science team

NASA Technical Reports Server (NTRS)

Ando, K.

1982-01-01

A substantial technology base of solid state pushbroom sensors exists and is in the process of further evolution at both GSFC and JPL. Technologies being developed relate to short wave infrared (SWIR) detector arrays; HgCdTe hybrid detector arrays; InSb linear and area arrays; passive coolers; spectral beam splitters; the deposition of spectral filters on detector arrays; and the functional design of the shuttle/space platform imaging spectrometer (SIS) system. Spatial and spectral characteristics of field, aircraft and space multispectral sensors are summaried. The status, field of view, and resolution of foreign land observing systems are included.

Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence

NASA Astrophysics Data System (ADS)

Kang, M.; Jeon, S.; Jen, T.; Lee, J.-E.; Sih, V.; Goldman, R. S.

2017-07-01

We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures.

Mercury cadmium telluride infrared detector development in India: status and issues

NASA Astrophysics Data System (ADS)

Singh, R. N.

2009-05-01

In the present paper, we describe the development of Long Wave Infrared (8-12 μm) linear and 2-D IR FPA detectors using HgCdTe for use in thermal imagers and IIR seekers. In this direction, Solid State Physics Laboratory(SSPL) (DRDO) tried to concentrate initially in the bulk growth and characterization of HgCdTe during the early eighties. Some efforts were then made to develop a LWIR photoconductive type MCT array in linear configuration with the IRFPA processed on bulk MCT crystals grown in the laboratory. Non availability of quality epilayers with the required specification followed by the denial of supply of CdTe, CdZnTe and even high purity Te by advanced countries, forced us to shift our efforts during early nineties towards development of 60 element PC IR detectors. High performance linear PC arrays were developed. A novel horizontal casting procedure was evolved for growing high quality bulk material using solid state recrystallization technique. Efforts for ultra purification of Te to 7N purity with the help of a sister concern has made it possible to have this material indigenously. Having succeded in the technology for growing single crystalline CdZnTe with (111) orientation and LPE growth of HgCdTe epilayers on CdZnTe substrates an attempt was made to establish the fabrication of 2D short PV arrays showing significant IR response. Thus a detailed technological knowhow for passivation, metallization, ion implanted junction formation, etc. was generated. Parallel work on the development of a matching CCD Mux readout in silicon by Semiconductor Complex Limited was also completed which was tested first in stand-alone mode followed by integration with IRFPAs through indigenously-developed indium bumps. These devices were integrated into an indigenously fabricated glass dewar cooled by a self-developed JT minicooler. In recent years, the LPE (Liquid Phase Epitaxy) growth from Terich route has been standardized for producing epitaxial layers with high compositional and thickness uniformity leading to a respectable stage of maturity in FPA technology.

Complementary barrier infrared detector (CBIRD)

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Bandara, Sumith V. (Inventor); Hill, Cory J. (Inventor); Gunapala, Sarath D. (Inventor)

2013-01-01

An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier.

Arrays of Position-Sensitive Virtual Frisch-Grid CdZnTe Detectors: Results From a $$4\\times 4$$ Array Prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ocampo Giraldo, L. A.; Bolotnikov, A. E.; Camarda, G. S.

Position-sensitive virtual Frisch-grid (VFG) CdZnTe (CZT) detectors offer a unique capability for correcting the response nonuniformities caused by crystal defects. This allowed us to achieve high energy resolution, while using typical-grade commercial CZT crystals with relaxed requirements to their quality, thus reducing the overall cost of detectors. Another advantage of the VFG detectors is that they can be integrated into arrays and used in small compact hand-held instruments or large-area gamma cameras that will enhance detection capability for many practical applications, including nonproliferation, medical imaging, and gamma-ray astronomy. Here in this paper, we present the results from testing small arraymore » prototypes coupled with front-end application-specified integrated circuit. Each detector in the array is furnished with 5-mm-wide charge-sensing pads placed near the anode. The pads signals are converted into XY coordinates, which combined with the cathode signals (for Z coordinates) provide 3-D position information of all interaction points. The basic array consists of a number of detectors grouped into 2×2 subarrays, each having a common cathode made by connecting together the cathodes of the individual detectors. Lastly, these features can significantly improve the performance of detectors while using typical-grade low-cost CZT crystals to reduce the overall cost of the proposed instrument.« less

Arrays of Position-Sensitive Virtual Frisch-Grid CdZnTe Detectors: Results From a $$4\\times 4$$ Array Prototype

DOE PAGES

Ocampo Giraldo, L. A.; Bolotnikov, A. E.; Camarda, G. S.; ...

2017-08-22

Position-sensitive virtual Frisch-grid (VFG) CdZnTe (CZT) detectors offer a unique capability for correcting the response nonuniformities caused by crystal defects. This allowed us to achieve high energy resolution, while using typical-grade commercial CZT crystals with relaxed requirements to their quality, thus reducing the overall cost of detectors. Another advantage of the VFG detectors is that they can be integrated into arrays and used in small compact hand-held instruments or large-area gamma cameras that will enhance detection capability for many practical applications, including nonproliferation, medical imaging, and gamma-ray astronomy. Here in this paper, we present the results from testing small arraymore » prototypes coupled with front-end application-specified integrated circuit. Each detector in the array is furnished with 5-mm-wide charge-sensing pads placed near the anode. The pads signals are converted into XY coordinates, which combined with the cathode signals (for Z coordinates) provide 3-D position information of all interaction points. The basic array consists of a number of detectors grouped into 2×2 subarrays, each having a common cathode made by connecting together the cathodes of the individual detectors. Lastly, these features can significantly improve the performance of detectors while using typical-grade low-cost CZT crystals to reduce the overall cost of the proposed instrument.« less

Development of ultrahigh resolution alpha particle imaging detector using 1 mm channel size Si-PM array

NASA Astrophysics Data System (ADS)

Yamamoto, Seiichi; Kawaguchi, Wataru

2018-06-01

For precise distribution measurements of alpha particles, a high-resolution alpha particle imaging detector is required. Although combining a thin scintillator with a silicon photomultiplier (Si-PM) array is a promising method for achieving high resolution, the spatial resolution is limited. Reducing the size of the Si-PM array is a possible approach to improving the spatial resolution of the alpha particle imaging detector. Consequently, we employed a 1 mm channel size Si-PM array combined with a thin ZnS(Ag) sheet to form an alpha particle imaging detector and evaluated the performance. For the developed alpha particle imaging detector, an Si-PM array with 1 mm x 1 mm channel size arranged 8 x 8 was optically coupled to a ZnS(Ag) sheet with a 1-mm-thick light guide between them. The size of the alpha particle imaging detector was 9.5 mm x 9.5 mm. The spatial resolution of the developed alpha particle imaging detector was 0.14 mm FWHM, and the energy resolution was 74% FWHM for 5.5 MeV alpha particles. The uniformity of the imaging detector at the central part of the field of view (FOV) was ±4.7%. The background count rate was 0.06 counts/min. We obtained various high-resolution phantom images for alpha particles with the developed system. We conclude that the developed imaging detector is promising for high-resolution distribution measurements of alpha particles.

Blocked impurity band hybrid infrared focal plane arrays for astronomy

NASA Technical Reports Server (NTRS)

Reynolds, D. B.; Seib, D. H.; Stetson, S. B.; Herter, T.; Rowlands, N.

1989-01-01

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

CdZnTe Image Detectors for Hard-X-Ray Telescopes

NASA Technical Reports Server (NTRS)

Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.; Mao, Peter H.; Schindler, Stephen M.

2005-01-01

Arrays of CdZnTe photodetectors and associated electronic circuitry have been built and tested in a continuing effort to develop focal-plane image sensor systems for hard-x-ray telescopes. Each array contains 24 by 44 pixels at a pitch of 498 m. The detector designs are optimized to obtain low power demand with high spectral resolution in the photon- energy range of 5 to 100 keV. More precisely, each detector array is a hybrid of a CdZnTe photodetector array and an application-specific integrated circuit (ASIC) containing an array of amplifiers in the same pixel pattern as that of the detectors. The array is fabricated on a single crystal of CdZnTe having dimensions of 23.6 by 12.9 by 2 mm. The detector-array cathode is a monolithic platinum contact. On the anode plane, the contact metal is patterned into the aforementioned pixel array, surrounded by a guard ring that is 1 mm wide on three sides and is 0.1 mm wide on the fourth side so that two such detector arrays can be placed side-by-side to form a roughly square sensor area with minimal dead area between them. Figure 1 shows two anode patterns. One pattern features larger pixel anode contacts, with a 30-m gap between them. The other pattern features smaller pixel anode contacts plus a contact for a shaping electrode in the form of a grid that separates all the pixels. In operation, the grid is held at a potential intermediate between the cathode and anode potentials to steer electric charges toward the anode in order to reduce the loss of charges in the inter-anode gaps. The CdZnTe photodetector array is mechanically and electrically connected to the ASIC (see Figure 2), either by use of indium bump bonds or by use of conductive epoxy bumps on the CdZnTe array joined to gold bumps on the ASIC. Hence, the output of each pixel detector is fed to its own amplifier chain.

An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

DOE PAGES

Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.; ...

2015-07-28

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm 3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readoutmore » electronics. The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

2D Array of Far-infrared Thermal Detectors: Noise Measurements and Processing Issues

NASA Technical Reports Server (NTRS)

Lakew, B.; Aslam, S.; Stevenson, T.

2008-01-01

A magnesium diboride (MgB2) detector 2D array for use in future space-based spectrometers is being developed at GSFC. Expected pixel sensitivities and comparison to current state-of-the-art infrared (IR) detectors will be discussed.

A micro GC detector array based on chemiresistors employing various surface functionalized monolayer-protected gold nanoparticles.

PubMed

Jian, Rih-Sheng; Huang, Rui-Xuan; Lu, Chia-Jung

2012-01-15

Aspects of the design, fabrication, and characterization of a chemiresistor type of microdetector for use in conjunction with gas chromatograph are described. The detector was manufactured on silicon chips using microelectromechanical systems (MEMS) technology. Detection was based on measuring changes in resistance across a film comprised of monolayer-protected gold nanoclusters (MPCs). When chromatographic separated molecules entered the detector cell, the MPC film absorbed vapor and undergoes swelling, then the resistance changes accordingly. Thiolates were used as ligand shells to encapsulate the nano-gold core and to manipulate the selectivity of the detector array. The dimensions of the μ-detector array were 14(L)×3.9(W)×1.2(H)mm. Mixtures of eight volatile organic compounds with different functional groups and volatility were tested to characterize the selectivity of the μ-detector array. The detector responses were rapid, reversible, and linear for all of the tested compounds. The detection limits ranged from 2 to 111ng, and were related to both the compound volatility and the selectivity of the surface ligands on the gold nanoparticles. Design and operation parameters such as flow rate, detector temperature, and width of the micro-fluidic channel were investigated. Reduction of the detector temperature resulted in improved sensitivity due to increased absorption. When a wider flow channel was used, the signal-to-noise ratio was improved due to the larger sensing area. The extremely low power consumption and small size makes this μ-detector array potentially useful for the development of integrated μ-GC. Copyright © 2011 Elsevier B.V. All rights reserved.

Long-wavelength infrared (LWIR) quantum-dot infrared photodetector (QDIP) focal plane array

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Hill, C. J.; Ting, D. Z.; Liu, J. K.; Rafol, S. B.; Blazejewski, E. R.; Mumolo, J. M.; Keo, S. A.; Krishna, S.; Chang, Y. C.; Shott, C. A.

2006-05-01

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDIPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of ~ 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45o and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1μm devices has reached ~ 1 x 1010 Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDIP focal plane array. This QDIP focal plane array has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K, which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

Methods and devices for fabricating and assembling printable semiconductor elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Methods and devices for fabricating and assembling printable semiconductor elements

DOEpatents

Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

2014-03-04

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Can neutrino mass be deduced from beta particle spectrum?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Semkow, T.M.

1993-12-31

With 17-keV neutrino faith being uncertain, it is important to examine the effects of detector resolution and response on the detection limits of massive neutrino. The authors use Fermi theory and generate by Monte Carlo up to 5-10{sup 9} {beta}{sup {minus}} decay events from {sup 35}S. The {beta}{sup {minus}} spectra are then resolved by {chi}{sup 2} minimization. We show that given high statistics and accurate knowledge of the response function it should be possible to detect neutrino mass with a proportional detector, particularly with the gas-scintillation proportional detector, in addition to semiconductor, in addition to semiconductor detectors. This paper presentsmore » a design of double-chamber Xe gas-scintillation proportional detector in which the backscattering effects are suppressed. However, even the slight uncertainties in the response functions as well as {approximately} 10{sup {minus}3} relative energy nonlinearities in the {beta}{sup {minus}} spectrum may create an artificial effect of neutrino mass.« less

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

PubMed

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

High mobility emissive organic semiconductor

PubMed Central

Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

2015-01-01

The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

Compositions of doped, co-doped and tri-doped semiconductor materials

DOEpatents

Lynn, Kelvin [Pullman, WA; Jones, Kelly [Colfax, WA; Ciampi, Guido [Watertown, MA

2011-12-06

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

PubMed Central

Yu, Chongqi; Wang, Hui

2010-01-01

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures. PMID:22163463

Particle Identification in the NIMROD-ISiS Detector Array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wuenschel, S.; Hagel, K.; May, L. W.

Interest in the influence of the neutron-to-proton (N/Z) ratio on multifragmenting nuclei has demanded an improvement in the capabilities of multi-detector arrays as well as the companion analysis methods. The particle identification method used in the NIMROD-ISiS 4{pi} array is described. Performance of the detectors and the analysis method are presented for the reaction of {sup 86}Kr+{sup 64}Ni at 35 MeV/u.

Development of a mercuric iodide detector array for in-vivo x-ray imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, B.E.; Iwanczyk, J.S.; Tornai, M.P.

A nineteen element mercuric iodide (HgI{sub 2}) detector array has been developed in order to investigate the potential of using this technology for in-vivo x-ray and gamma-ray imaging. A prototype cross-grid detector array was constructed with hexagonal pixels of 1.9 mm diameter (active area = 3.28 mm{sup 2}) and 0.2 mm thick septa. The overall detector active area is roughly 65 mm{sup 2}. A detector thickness of 1.2 mm was used to achieve about 100% efficiency at 60 keV and 67% efficiency at 140 keV The detector fabrication, geometry and structure were optimized for charge collection and to minimize crosstalkmore » between elements. A section of a standard high resolution cast-lead gamma-camera collimator was incorporated into the detector to provide collimation matching the discrete pixel geometry. Measurements of spectral and spatial performance of the array were made using 241-Am and 99m-Tc sources. These measurements were compared with similar measurements made using an optimized single HgI{sub 2} x-ray detector with active area of about 3 mm{sup 2} and thickness of 500 {mu}m.« less

High-Performance Flexible Force and Temperature Sensing Array with a Robust Structure

NASA Astrophysics Data System (ADS)

Kim, Min-Seok; Song, Han-Wook; Park, Yon-Kyu

We have developed a flexible tactile sensor array capable of sensing physical quantities, e.g. force and temperature with high-performances and high spatial resolution. The fabricated tactile sensor consists of 8 × 8 force measuring array with 1 mm spacing and a thin metal (copper) temperature sensor. The flexible force sensing array consists of sub-millimetre-size bar-shaped semi-conductor strain gage array attached to a thin and flexible printed circuit board covered by stretchable elastomeric material on both sides. This design incorporates benefits of both materials; the semi-conductor's high performance and the polymer's mechanical flexibility and robustness, while overcoming their drawbacks of those two materials. Special fabrication processes, so called “dry-transfer technique” have been used to fabricate the tactile sensor along with standard micro-fabrication processes.

Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors

NASA Astrophysics Data System (ADS)

Augel, L.; Fischer, I. A.; Dunbar, L. A.; Bechler, S.; Berrier, A.; Etezadi, D.; Hornung, F.; Kostecki, K.; Ozdemir, C. I.; Soler, M.; Altug, H.; Schulze, J.

2016-03-01

Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible to Si-based complementary metal oxide semiconductor (CMOS) technology that can be combined with integrated circuitry for continuous monitoring of biosamples and fast sensor data processing. Such an integrated biosensor could be realized by structuring a nanohole array in the contact metal layer of a photodetector. We used Fouriertransform infrared spectroscopy to investigate nanohole arrays in a 100 nm Al film deposited on top of a vertical Si-Ge photodiode structure grown by molecular beam epitaxy (MBE). We find that the presence of a protein bilayer, constitute of protein AG and Immunoglobulin G (IgG), leads to a wavelength-dependent absorptance enhancement of ~ 8 %.

Polarization reconstruction algorithm for a Compton polarimeter

NASA Astrophysics Data System (ADS)

Vockert, M.; Weber, G.; Spillmann, U.; Krings, T.; Stöhlker, Th

2018-05-01

We present the technique of Compton polarimetry using X-ray detectors based on double-sided segmented semiconductor crystals that were developed within the SPARC collaboration. In addition, we discuss the polarization reconstruction algorithm with particular emphasis on systematic deviations between the observed detector response and our model function for the Compton scattering distribution inside the detector.

The energy spectrum of ultra-high-energy cosmic rays measured by the Telescope Array FADC fluorescence detectors in monocular mode

NASA Astrophysics Data System (ADS)

Abu-Zayyad, T.; Aida, R.; Allen, M.; Anderson, R.; Azuma, R.; Barcikowski, E.; Belz, J. W.; Bergman, D. R.; Blake, S. A.; Cady, R.; Cheon, B. G.; Chiba, J.; Chikawa, M.; Cho, E. J.; Cho, W. R.; Fujii, H.; Fujii, T.; Fukuda, T.; Fukushima, M.; Hanlon, W.; Hayashi, K.; Hayashi, Y.; Hayashida, N.; Hibino, K.; Hiyama, K.; Honda, K.; Iguchi, T.; Ikeda, D.; Ikuta, K.; Inoue, N.; Ishii, T.; Ishimori, R.; Ito, H.; Ivanov, D.; Iwamoto, S.; Jui, C. C. H.; Kadota, K.; Kakimoto, F.; Kalashev, O.; Kanbe, T.; Kasahara, K.; Kawai, H.; Kawakami, S.; Kawana, S.; Kido, E.; Kim, H. B.; Kim, H. K.; Kim, J. H.; Kim, J. H.; Kitamoto, K.; Kitamura, S.; Kitamura, Y.; Kobayashi, K.; Kobayashi, Y.; Kondo, Y.; Kuramoto, K.; Kuzmin, V.; Kwon, Y. J.; Lan, J.; Lim, S. I.; Lundquist, J. P.; Machida, S.; Martens, K.; Matsuda, T.; Matsuura, T.; Matsuyama, T.; Matthews, J. N.; Myers, I.; Minamino, M.; Miyata, K.; Murano, Y.; Nagataki, S.; Nakamura, T.; Nam, S. W.; Nonaka, T.; Ogio, S.; Ogura, J.; Ohnishi, M.; Ohoka, H.; Oki, K.; Oku, D.; Okuda, T.; Ono, M.; Oshima, A.; Ozawa, S.; Park, I. H.; Pshirkov, M. S.; Rodriguez, D. C.; Roh, S. Y.; Rubtsov, G.; Ryu, D.; Sagawa, H.; Sakurai, N.; Sampson, A. L.; Scott, L. M.; Shah, P. D.; Shibata, F.; Shibata, T.; Shimodaira, H.; Shin, B. K.; Shin, J. I.; Shirahama, T.; Smith, J. D.; Sokolsky, P.; Sonley, T. J.; Springer, R. W.; Stokes, B. T.; Stratton, S. R.; Stroman, T. A.; Suzuki, S.; Takahashi, Y.; Takeda, M.; Taketa, A.; Takita, M.; Tameda, Y.; Tanaka, H.; Tanaka, K.; Tanaka, M.; Thomas, S. B.; Thomson, G. B.; Tinyakov, P.; Tkachev, I.; Tokuno, H.; Tomida, T.; Troitsky, S.; Tsunesada, Y.; Tsutsumi, K.; Tsuyuguchi, Y.; Uchihori, Y.; Udo, S.; Ukai, H.; Vasiloff, G.; Wada, Y.; Wong, T.; Yamakawa, Y.; Yamane, R.; Yamaoka, H.; Yamazaki, K.; Yang, J.; Yoneda, Y.; Yoshida, S.; Yoshii, H.; Zollinger, R.; Zundel, Z.

2013-08-01

We present a measurement of the energy spectrum of ultra-high-energy cosmic rays performed by the Telescope Array experiment using monocular observations from its two new FADC-based fluorescence detectors. After a short description of the experiment, we describe the data analysis and event reconstruction procedures. Since the aperture of the experiment must be calculated by Monte Carlo simulation, we describe this calculation and the comparisons of simulated and real data used to verify the validity of the aperture calculation. Finally, we present the energy spectrum calculated from the merged monocular data sets of the two FADC-based detectors, and also the combination of this merged spectrum with an independent, previously published monocular spectrum measurement performed by Telescope Array's third fluorescence detector [T. Abu-Zayyad et al., The energy spectrum of Telescope Array's middle drum detector and the direct comparison to the high resolution fly's eye experiment, Astroparticle Physics 39 (2012) 109-119, http://dx.doi.org/10.1016/j.astropartphys.2012.05.012, Available from: ]. This combined spectrum corroborates the recently published Telescope Array surface detector spectrum [T. Abu-Zayyad, et al., The cosmic-ray energy spectrum observed with the surface detector of the Telescope Array experiment, ApJ 768 (2013) L1, http://dx.doi.org/10.1088/2041-8205/768/1/L1, Available from: ] with independent systematic uncertainties.

Basic Performance Test of a Prototype PET Scanner Using CdTe Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Ueno, Y.; Morimoto, Y.; Tsuchiya, K.; Yanagita, N.; Kojima, S.; Ishitsu, T.; Kitaguchi, H.; Kubo, N.; Zhao, S.; Tamaki, N.; Amemiya, K.

2009-02-01

A prototype positron emission tomography (PET) scanner using CdTe semiconductor detectors was developed, and its initial evaluation was conducted. The scanner was configured to form a single detector ring with six separated detector units, each having 96 detectors arranged in three detector layers. The field of view (FOV) size was 82 mm in diameter. Basic physical performance indicators of the scanner were measured through phantom studies and confirmed by rat imaging. The system-averaged energy resolution and timing resolution were 5.4% and 6.0 ns (each in FWHM) respectively. Spatial resolution measured at FOV center was 2.6 mm FWHM. Scatter fraction was measured and calculated in a National Electrical Manufacturers Association (NEMA)-fashioned manner using a 3-mm diameter hot capillary in a water-filled 80-mm diameter acrylic cylinder. The calculated result was 3.6%. Effect of depth of interaction (DOI) measurement was demonstrated by comparing hot-rod phantom images reconstructed with and without DOI information. Finally, images of a rat myocardium and an implanted tumor were visually assessed, and the imaging performance was confirmed.

Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan S.; Patt, Bradley E.

Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector tomore » substantially maximize the ratio of the signal to the electronic noise.« less

SEM observation of p-n junction in semiconductors using fountain secondary electron detector

NASA Astrophysics Data System (ADS)

Sekiguchi, Takashi; Kimura, Takashi; Iwai, Hideo

2016-11-01

When we observe a p-n junction in a certain semiconductors using scanning electron microscope, it is known that the p-type region is brighter than n-type region in secondary electron (SE) image. To clarify this origin, the p-n junctions in 4H-SiC was observed using fountain secondary electron detector (FSED). The original FSED image shows brighter p-region than n-region, which is similar to the SE image taken by Everhart-Thonley detector, mainly due to the background component of SE signal. By subtracting the background, the line profiles of FSED signal across p-n junction have been recorded according to the SE energies. These profiles may include the detailed information of p-n junction.

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

PubMed

Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

2011-08-01

In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. © 2011 Optical Society of America

64 x 64 thresholding photodetector array for optical pattern recognition

NASA Astrophysics Data System (ADS)

Langenbacher, Harry; Chao, Tien-Hsin; Shaw, Timothy; Yu, Jeffrey W.

1993-10-01

A high performance 32 X 32 peak detector array is introduced. This detector consists of a 32 X 32 array of thresholding photo-transistor cells, manufactured with a standard MOSIS digital 2-micron CMOS process. A built-in thresholding function that is able to perform 1024 thresholding operations in parallel strongly distinguishes this chip from available CCD detectors. This high speed detector offers responses from one to 10 milliseconds that is much higher than the commercially available CCD detectors operating at a TV frame rate. The parallel multiple peaks thresholding detection capability makes it particularly suitable for optical correlator and optoelectronically implemented neural networks. The principle of operation, circuit design and the performance characteristics are described. Experimental demonstration of correlation peak detection is also provided. Recently, we have also designed and built an advanced version of a 64 X 64 thresholding photodetector array chip. Experimental investigation of using this chip for pattern recognition is ongoing.

High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Hill, Cory J. (Inventor); Seibel, Alexander (Inventor); Bandara, Sumith Y. (Inventor); Gunapala, Sarath D. (Inventor)

2015-01-01

A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

Monolithic short wave infrared (SWIR) detector array

NASA Technical Reports Server (NTRS)

1983-01-01

A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors

DOE PAGES

Mahjouri-Samani, Masoud; Lin, Ming-Wei; Wang, Kai; ...

2015-07-22

The formation of semiconductor heterojunctions and their high density integration are foundations of modern electronics and optoelectronics. To enable two-dimensional (2D) crystalline semiconductors as building blocks in next generation electronics, developing methods to deterministically form lateral heterojunctions is crucial. Here we demonstrate a process strategy for the formation of lithographically-patterned lateral semiconducting heterojunctions within a single 2D crystal. E-beam lithography is used to pattern MoSe 2 monolayer crystals with SiO 2, and the exposed locations are selectively and totally converted to MoS 2 using pulsed laser deposition (PLD) of sulfur in order to form MoSe 2/MoS 2 heterojunctions in predefinedmore » patterns. The junctions and conversion process are characterized by atomically resolved scanning transmission electron microscopy, photoluminescence, and Raman spectroscopy. This demonstration of lateral semiconductor heterojunction arrays within a single 2D crystal is an essential step for the lateral integration of 2D semiconductor building blocks with different electronic and optoelectronic properties for high-density, ultrathin circuitry.« less

Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

NASA Astrophysics Data System (ADS)

Miller, Timothy M.; Abrahams, John H.; Allen, Christine A.

2006-04-01

We report a fabrication process for deep etching silicon to different depths with a single masking layer, using standard masking and exposure techniques. Using this technique, we have incorporated a deep notch in the support walls of a transition-edge-sensor (TES) bolometer array during the detector back-etch, while simultaneously creating a cavity behind the detector. The notches serve to receive the support beams of a separate component, the Backshort-Under-Grid (BUG), an array of adjustable height quarter-wave backshorts that fill the cavities behind each pixel in the detector array. The backshort spacing, set prior to securing to the detector array, can be controlled from 25 to 300 μm by adjusting only a few process steps. In addition to backshort spacing, the interlocking beams and notches provide positioning and structural support for the ˜1 mm pitch, 8×8 array. This process is being incorporated into developing a TES bolometer array with an adjustable backshort for use in far-infrared astronomy. The masking technique and machining process used to fabricate the interlocking walls will be discussed.

3D imaging LADAR with linear array devices: laser, detector and ROIC

NASA Astrophysics Data System (ADS)

Kameyama, Shumpei; Imaki, Masaharu; Tamagawa, Yasuhisa; Akino, Yosuke; Hirai, Akihito; Ishimura, Eitaro; Hirano, Yoshihito

2009-07-01

This paper introduces the recent development of 3D imaging LADAR (LAser Detection And Ranging) in Mitsubishi Electric Corporation. The system consists of in-house-made key devices which are linear array: the laser, the detector and the ROIC (Read-Out Integrated Circuit). The laser transmitter is the high power and compact planar waveguide array laser at the wavelength of 1.5 micron. The detector array consists of the low excess noise Avalanche Photo Diode (APD) using the InAlAs multiplication layer. The analog ROIC array, which is fabricated in the SiGe- BiCMOS process, includes the Trans-Impedance Amplifiers (TIA), the peak intensity detectors, the Time-Of-Flight (TOF) detectors, and the multiplexers for read-out. This device has the feature in its detection ability for the small signal by optimizing the peak intensity detection circuit. By combining these devices with the one dimensional fast scanner, the real-time 3D range image can be obtained. After the explanations about the key devices, some 3D imaging results are demonstrated using the single element key devices. The imaging using the developed array devices is planned in the near future.

Characterization and Performance of a Kilo-TES Sub-Array for ACTPol

NASA Technical Reports Server (NTRS)

Grace, E. A.; Beall, J.; Cho, H. M.; Devlin, M. J.; Fox, A.; Hilton, G.; Hubmayr, J.; Irwin, K.; Klein, J.; Li, D.;

Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

NASA Astrophysics Data System (ADS)

Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

2018-03-01

Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (<3%), and a response correlation coefficient (>0.995) with a response time of <4 ms to the inhomogeneous IR illumination. The presented hybrid configuration also benefits from a straightforward low-temperature fabrication process. These advantages of the PEDOT:PSS/n-Si heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

Neutron and gamma-ray energy reconstruction for characterization of special nuclear material

DOE PAGES

Clarke, Shaun D.; Hamel, Michael C.; Di fulvio, Angela; ...

2017-06-30

Characterization of special nuclear material may be performed using energy spectroscopy of either the neutron or gamma-ray emissions from the sample. Gamma-ray spectroscopy can be performed relatively easily using high-resolution semiconductors such as high-purity germanium. Neutron spectroscopy, by contrast, is a complex inverse problem. Here, results are presented for 252Cf and PuBe energy spectra unfolded using a single EJ309 organic scintillator; excellent agreement is observed with the reference spectra. Neutron energy spectroscopy is also possible using a two-plane detector array, whereby time-offlight kinematics can be used. With this system, energy spectra can also be obtained as a function of position.more » Finally, spatial-dependent energy spectra are presented for neutron and gamma-ray sources that are in excellent agreement with expectations.« less

Neutron and gamma-ray energy reconstruction for characterization of special nuclear material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clarke, Shaun D.; Hamel, Michael C.; Di fulvio, Angela

Characterization of special nuclear material may be performed using energy spectroscopy of either the neutron or gamma-ray emissions from the sample. Gamma-ray spectroscopy can be performed relatively easily using high-resolution semiconductors such as high-purity germanium. Neutron spectroscopy, by contrast, is a complex inverse problem. Here, results are presented for 252Cf and PuBe energy spectra unfolded using a single EJ309 organic scintillator; excellent agreement is observed with the reference spectra. Neutron energy spectroscopy is also possible using a two-plane detector array, whereby time-offlight kinematics can be used. With this system, energy spectra can also be obtained as a function of position.more » Finally, spatial-dependent energy spectra are presented for neutron and gamma-ray sources that are in excellent agreement with expectations.« less

One dimensional wavefront distortion sensor comprising a lens array system

DOEpatents

Neal, Daniel R.; Michie, Robert B.

1996-01-01

A 1-dimensional sensor for measuring wavefront distortion of a light beam as a function of time and spatial position includes a lens system which incorporates a linear array of lenses, and a detector system which incorporates a linear array of light detectors positioned from the lens system so that light passing through any of the lenses is focused on at least one of the light detectors. The 1-dimensional sensor determines the slope of the wavefront by location of the detectors illuminated by the light. The 1 dimensional sensor has much greater bandwidth that 2 dimensional systems.

One dimensional wavefront distortion sensor comprising a lens array system

DOEpatents

Neal, D.R.; Michie, R.B.

1996-02-20

A 1-dimensional sensor for measuring wavefront distortion of a light beam as a function of time and spatial position includes a lens system which incorporates a linear array of lenses, and a detector system which incorporates a linear array of light detectors positioned from the lens system so that light passing through any of the lenses is focused on at least one of the light detectors. The 1-dimensional sensor determines the slope of the wavefront by location of the detectors illuminated by the light. The 1 dimensional sensor has much greater bandwidth that 2 dimensional systems. 8 figs.

High Density Faraday Cup Array or Other Open Trench Structures and Method of Manufacture Thereof

NASA Technical Reports Server (NTRS)

Gilchrist, Kristin Hedgepath (Inventor); Bower, Christopher A. (Inventor); Stoner, Brian R. (Inventor)

2014-01-01

A detector array and method for making the detector array. The detector array includes a substrate including a plurality of trenches formed therein, and a plurality of collectors electrically isolated from each other, formed on the walls of the trenches, and configured to collect charged particles incident on respective ones of the collectors and to output from the collectors signals indicative of charged particle collection. In the detector array, adjacent ones of the plurality of trenches are disposed in a staggered configuration relative to one another. The method forms in a substrate a plurality of trenches across a surface of the substrate such that adjacent ones of the trenches are in a staggered sequence relative to one another, forms in the plurality of trenches a plurality of collectors, and connects a plurality of electrodes respectively to the collectors.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

ECLAIRs detection plane: current state of development

NASA Astrophysics Data System (ADS)

Lacombe, K.; Pons, R.; Amoros, C.; Atteia, J.-L.; Barret, D.; Billot, M.; Bordon, S.; Cordier, B.; Gevin, O.; Godet, O.; Gonzalez, F.; Houret, B.; Mercier, K.; Mandrou, P.; Marty, W.; Nasser, G.; Rambaud, D.; Ramon, P.; Rouaix, G.; Waegebaert, V.

2014-07-01

ECLAIRs, a 2-D coded-mask imaging camera on-board the Sino-French SVOM space mission, will detect and locate Gamma-ray bursts (GRBs) in near real time in the 4-150 keV energy band. The design of ECLAIRs has been mainly driven by the objective of achieving a low-energy threshold of 4 keV, unprecedented for this type of instrument. The detection plane is an assembly of 6400 Schottky CdTe semiconductor detectors of size 4x4x1 mm3 organized on elementary hybrid matrices of 4x8 detectors. The detectors will be polarized from -300V to -500V and operated at -20°C to reduce both the leakage current and the polarization effect induced by the Schottky contact. The remarkable low-energy threshold homogeneity required for the detection plane has been achieved thanks to: i) an extensive characterization and selection of the detectors, ii) the development of a specific low-noise 32-channel ASIC, iii) the realization of an innovative hybrid module composed of a thick film ceramic (holding 32 CdTe detectors with their high voltage grid), associated to an HTCC ceramic (housing the ASIC chip within an hermetic enclosure). In this paper, we start describing a complete hybrid matrix, and then the manufacturing of a first set of 50 matrices (representing 1600 detectors, i.e. a quarter of ECLAIRs detector's array). We show how this manufacturing allowed to validate the different technologies used for this hybridization, as well as the industrialization processes. During this phase, we systematically measured the leakage current on Detector Ceramics after an outgassing, and the Equivalent Noise Charge (ENC) for each of the 32 channels on ASIC Ceramics, in order to optimize the coupling of the two ceramics. Finally, we performed on each hybrid module, spectral measurements at -20°C in our vacuum chamber, using several calibrated radioactive sources (241Am and 55Fe), to check the performance homogeneity of the 50 modules. The results demonstrated that the 32-detector hybrid matrices presented homogeneous spectral properties and that a lowenergy threshold of 4 keV for each detector could be reached. In conclusion, our hybrid module has obtained the performance required at the SVOM mission level and successfully withstood the space environment tests (TRL 6/7). This development phase has given us the opportunity to build a detector's array prototype (Engineering Model) equipped with 50 hybrid modules. Thanks to this prototype we are in the process of validating a complete detection chain (from the detectors to the backend electronics) and checking the performance. In addition it enables us to consolidate the instrument's mechanical and thermal design, and to write preliminary versions of the quality procedures required for integration, functional tests and calibration steps. At the end of this prototype development and testing, we will be ready to start the detailed design of the detection plane Flight Model.

Array Detector Modules for Spent Fuel Verification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov, Aleksey

Brookhaven National Laboratory (BNL) proposes to evaluate the arrays of position-sensitive virtual Frisch-grid (VFG) detectors for passive gamma-ray emission tomography (ET) to verify the spent fuel in storage casks before storing them in geo-repositories. Our primary objective is to conduct a preliminary analysis of the arrays capabilities and to perform field measurements to validate the effectiveness of the proposed array modules. The outcome of this proposal will consist of baseline designs for the future ET system which can ultimately be used together with neutrons detectors. This will demonstrate the usage of this technology in spent fuel storage casks.

Tuneable photonic device including an array of metamaterial resonators

DOEpatents

Brener, Igal; Wanke, Michael; Benz, Alexander

2017-03-14

A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hughes, R. O.; Burke, J. T.; Casperson, R. J.

Hyperion is a new high-efficiency charged-particle γ-ray detector array which consists of a segmented silicon telescope for charged-particle detection and up to fourteen high-purity germanium clover detectors for the detection of coincident γ rays. The array will be used in nuclear physics measurements and Stockpile Stewardship studies and replaces the STARLiTeR array. In conclusion, this article discusses the features of the array and presents data collected with the array in the commissioning experiment.

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, Robert J.; Hughes, Robert C.; Wampler, William R.

1988-01-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicondioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies.

Detector and energy analyzer for energetic-hydrogen in beams and plasmas

DOEpatents

Bastasz, R.J.; Hughes, R.C.; Wampler, W.R.

1988-11-01

A detector for detecting energetic hydrogen ions and atoms ranging in energy from about 1 eV up to 1 keV in an evacuated environment includes a Schottky diode with a palladium or palladium-alloy gate metal applied to a silicon-dioxide layer on an n-silicon substrate. An array of the energetic-hydrogen detectors having a range of energy sensitivities form a plasma energy analyzer having a rapid response time and a sensitivity for measuring fluxes of energetic hydrogen. The detector is sensitive to hydrogen and its isotopes but is insensitive to non-hydrogenic particles. The array of energetic-hydrogen detectors can be formed on a single silicon chip, with thin-film layers of gold metal applied in various thicknesses to successive detectors in the array. The gold layers serve as particle energy-filters so that each detector is sensitive to a different range of hydrogen energies. 4 figs.

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nylund, Gustav; Storm, Kristian; Torstensson, Henrik

2013-12-04

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

Future Trends in MIcroelectronics: Up the Nano Creek

DTIC Science & Technology

2006-06-01

developed focal plane arrays (FPA)3𔃾 in addition to emphasizing future development in UV-to-far infrared multicolor FPA detectors 5𔄀 for next generation... detectors ", IEEE J. Quantum Electronics 35, 1685 (1999). 3. P. Bois, E. Costard, X. Marcadet, and E. Herniou, "Development of quantum well infrared ...photodetector array", Infrared Phys. Technol. 44, 369 (2003). 5. M. N. Abedin, T. F. Refaat, J. M. Zawodny, et al., "Multicolor focal plane array detector

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting

NASA Astrophysics Data System (ADS)

Li, Kexue; Liu, Lei; Yu, Peter Y.; Chen, Xiaobo; Shen, D. Z.

2016-05-01

By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

PubMed

Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

2016-05-11

By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

Ultrasonic imaging using optoelectronic transmitters.

PubMed

Emery, C D; Casey, H C; Smith, S W

1998-04-01

Conventional ultrasound scanners utilize electronic transmitters and receivers at the scanner with a separate coaxial cable connected to each transducer element in the handle. The number of transducer elements determines the size and weight of the transducer cable assembly that connects the imaging array to the scanner. 2-D arrays that allow new imaging modalities to be introduced significantly increase the channel count making the transducer cable assembly more difficult to handle. Therefore, reducing the size and increasing the flexibility of the transducer cable assembly is a concern. Fiber optics can be used to transmit signals optically and has distinct advantages over standard coaxial cable to increase flexibility and decrease the weight of the transducer cable for larger channel numbers. The use of fiber optics to connect the array and the scanner entails the use of optoelectronics such as detectors and laser diodes to send and receive signals. In transmit, optoelectronics would have to be designed to produce high-voltage wide-bandwidth pulses across the transducer element. In this paper, we describe a 48 channel ultrasound system having 16 optoelectronic transmitters and 32 conventional electronic receivers. We investigated both silicon avalanche photodiodes (APD's) and GaAs lateral photoconductive semiconductor switches (PCSS's) for producing the transmit pulses. A Siemens SI-1200 scanner and a 2.25 MHz linear array were used to compare the optoelectronic system to a conventional electronic transmit system. Transmit signal results and images in tissue mimicking of cysts and tumors are provided for comparison.

High-efficiency UV/optical/NIR detectors for large aperture telescopes and UV explorer missions: development of and field observations with delta-doped arrays

NASA Astrophysics Data System (ADS)

Nikzad, Shouleh; Jewell, April D.; Hoenk, Michael E.; Jones, Todd J.; Hennessy, John; Goodsall, Tim; Carver, Alexander G.; Shapiro, Charles; Cheng, Samuel R.; Hamden, Erika T.; Kyne, Gillian; Martin, D. Christopher; Schiminovich, David; Scowen, Paul; France, Kevin; McCandliss, Stephan; Lupu, Roxana E.

2017-07-01

Exciting concepts are under development for flagship, probe class, explorer class, and suborbital class NASA missions in the ultraviolet/optical spectral range. These missions will depend on high-performance silicon detector arrays being delivered affordably and in high numbers. To that end, we have advanced delta-doping technology to high-throughput and high-yield wafer-scale processing, encompassing a multitude of state-of-the-art silicon-based detector formats and designs. We have embarked on a number of field observations, instrument integrations, and independent evaluations of delta-doped arrays. We present recent data and innovations from JPL's Advanced Detectors and Systems Program, including two-dimensional doping technology, JPL's end-to-end postfabrication processing of high-performance UV/optical/NIR arrays and advanced coatings for detectors. While this paper is primarily intended to provide an overview of past work, developments are identified and discussed throughout. Additionally, we present examples of past, in-progress, and planned observations and deployments of delta-doped arrays.

Energy straggling eliminated as a limitation to charge resolution of transmission detectors. [used for particle identification

NASA Technical Reports Server (NTRS)

Tarle, G.; Ahlen, S. P.; Price, P. B.

1981-01-01

It is pointed out that detectors of the energy loss of penetrating charged particles are widely used for particle identification. These measurements are hampered, however, by fluctuations in the amount of energy deposited within the detector. It is shown that this limitation can be overcome with a new nuclear track detector, CR-39(DOP), and that the charge resolution of this detector exceeds that of any other, including semiconductor diodes.

Basic performance evaluation of a Si-PM array-based LGSO phoswich DOI block detector for a high-resolution small animal PET system.

PubMed

Yamamoto, Seiichi

2013-07-01

The silicon photomultiplier (Si-PM) is a promising photodetector for PET. However, it remains unclear whether Si-PM can be used for a depth-of-interaction (DOI) detector based on the decay time differences of the scintillator where pulse shape analysis is used. For clarification, we tested the Hamamatsu 4 × 4 Si-PM array (S11065-025P) combined with scintillators that used different decay times to develop DOI block detectors using the pulse shape analysis. First, Ce-doped Gd(2)SiO(5) (GSO) scintillators of 0.5 mol% Ce were arranged in a 4 × 4 matrix and were optically coupled to the center of each pixel of the Si-PM array for measurement of the energy resolution as well as its gain variations according to the temperature. Then two types of Ce-doped Lu(1.9)Gd(0.1)Si0(5) (LGSO) scintillators, 0.025 mol% Ce (decay time: ~31 ns) and 0.75 mol% Ce (decay time: ~46 ns), were optically coupled in the DOI direction, arranged in a 11 × 7 matrix, and optically coupled to a Si-PM array for testing of the possibility of a high-resolution DOI detector. The energy resolution of the Si-PM array-based GSO block detector was 18 ± 4.4 % FWHM for a Cs-137 gamma source (662 keV). Less than 1 mm crystals were clearly resolved in the position map of the LGSO DOI block detector. The peak-to-valley ratio (P/V) derived from the pulse shape spectra of the LGSO DOI block detector was 2.2. These results confirmed that Si-PM array-based DOI block detectors are promising for high-resolution small animal PET systems.

Using triple gamma coincidences with a pixelated semiconductor Compton-PET scanner: a simulation study

NASA Astrophysics Data System (ADS)

Kolstein, M.; Chmeissani, M.

2016-01-01

The Voxel Imaging PET (VIP) Pathfinder project presents a novel design using pixelated semiconductor detectors for nuclear medicine applications to achieve the intrinsic image quality limits set by physics. The conceptual design can be extended to a Compton gamma camera. The use of a pixelated CdTe detector with voxel sizes of 1 × 1 × 2 mm3 guarantees optimal energy and spatial resolution. However, the limited time resolution of semiconductor detectors makes it impossible to use Time Of Flight (TOF) with VIP PET. TOF is used in order to improve the signal to noise ratio (SNR) by using only the most probable portion of the Line-Of-Response (LOR) instead of its entire length. To overcome the limitation of CdTe time resolution, we present in this article a simulation study using β+-γ emitting isotopes with a Compton-PET scanner. When the β+ annihilates with an electron it produces two gammas which produce a LOR in the PET scanner, while the additional gamma, when scattered in the scatter detector, provides a Compton cone that intersects with the aforementioned LOR. The intersection indicates, within a few mm of uncertainty along the LOR, the origin of the beta-gamma decay. Hence, one can limit the part of the LOR used by the image reconstruction algorithm.

Solid-State Neutron Detector Device

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)

2017-01-01

The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.

Operational performance characteristics of the WISH detector array on the ISIS spallation neutron source

NASA Astrophysics Data System (ADS)

Duxbury, D.; Khalyavin, D.; Manuel, P.; Raspino, D.; Rhodes, N.; Schooneveld, E.; Spill, E.

2014-12-01

The performance of the position sensitive neutron detector array of the WISH diffractometer is discussed. WISH (Wide angle In a Single Histogram) is one of the seven instruments currently available for users on the second target station (TS2) of the ISIS spallation neutron source, and is used mainly for magnetic studies of materials. WISH is instrumented with an array of 10 detector panels, covering an angular range of 320o, orientated in two semi-cylindrical annuli around a central sample position at a radius of 2.2m. In total the 10 detector panels are composed of 1520 3He based position sensitive detector tubes. Each tube has an active length of one metre, a diameter of 8mm and is filled with 3He at 15 bar. The specification for the WISH detectors included a neutron detection efficiency of 50% at a neutron wavelength of 1Å with good gamma rejection. A position resolution better than 8 mm FWHM along the length of the tubes was also required which has been met experimentally. Results obtained from the detector arrays showing pulse height and positional information both prior to and post installation are shown. The first 5 of the 10 detector panels have been operational since 2009, and comparable diffraction data from powder and single crystal samples taken from the remaining 5 panels (installation completed in 2013) shows that we have a detector array with a highly stable performance which is easily assembled and maintained. Finally some real user data is shown, highlighting the excellent quality of data attainable with this instrument.

A portable cadmium telluride multidetector probe for cardiac function monitoring

NASA Astrophysics Data System (ADS)

Arntz, Y.; Chambron, J.; Dumitresco, B.; Eclancher, B.; Prat, V.

1999-06-01

A new nuclear stethoscope based on a matrix of small CdTe semiconductor detectors has been developed for studying the cardiac performance by gamma ventriculography at the equilibrium, in rest and stress conditions, in the early and recovery phases of the coronary disease and to follow the long-term therapy. The light-weight probe consists of an array of 64 detectors 5×5×2 mm grouped in 16 independent units in a lead shielded aluminum box including 16 preamplifiers. The probe is connected to an electronic box containing DC power supply, 16 channel amplifiers, discriminators and counters, two analog-triggering ECG channels, and interface to a PC. The left ventricle activity is, preferentially, detected by using a low-resolution matching convergent collimator. A physical evaluation of the probe has been performed, both with static tests and dynamically with a hydraulic home-built model of beating heart ventricle paced by a rhythm simulator. The sum of the 16 detectors activity provided a radiocardiogram (RCG) which well depicted the filling and ejection of the cardiac beats, allowing to compare the clinically relevant parameters of the cardiac performance, proportional variables of the stroke volume (SV), ejection fraction (EF) and ventricular flow-rate with the known absolute values programmed on the model. The portable system is now in operation for clinical assessment of cardiac patients.

Multi-segment detector array for hybrid reflection-mode ultrasound and optoacoustic tomography (Conference Presentation)

NASA Astrophysics Data System (ADS)

Merčep, Elena; Burton, Neal C.; Deán-Ben, Xosé Luís.; Razansky, Daniel

2017-02-01

The complementary contrast of the optoacoustic (OA) and pulse-echo ultrasound (US) modalities makes the combined usage of these imaging technologies highly advantageous. Due to the different physical contrast mechanisms development of a detector array optimally suited for both modalities is one of the challenges to efficient implementation of a single OA-US imaging device. We demonstrate imaging performance of the first hybrid detector array whose novel design, incorporating array segments of linear and concave geometry, optimally supports image acquisition in both reflection-mode ultrasonography and optoacoustic tomography modes. Hybrid detector array has a total number of 256 elements and three segments of different geometry and variable pitch size: a central 128-element linear segment with pitch of 0.25mm, ideally suited for pulse-echo US imaging, and two external 64-elements segments with concave geometry and 0.6mm pitch optimized for OA image acquisition. Interleaved OA and US image acquisition with up to 25 fps is facilitated through a custom-made multiplexer unit. Spatial resolution of the transducer was characterized in numerical simulations and validated in phantom experiments and comprises 230 and 300 μm in the respective OA and US imaging modes. Imaging performance of the multi-segment detector array was experimentally shown in a series of imaging sessions with healthy volunteers. Employing mixed array geometries allows at the same time achieving excellent OA contrast with a large field of view, and US contrast for complementary structural features with reduced side-lobes and improved resolution. The newly designed hybrid detector array that comprises segments of linear and concave geometries optimally fulfills requirements for efficient US and OA imaging and may expand the applicability of the developed hybrid OPUS imaging technology and accelerate its clinical translation.

A survey of current in vivo radiotherapy dosimetry practice.

PubMed

Edwards, C R; Grieveson, M H; Mountford, P J; Rolfe, P

1997-03-01

A questionnaire was sent out to 57 radiotherapy physics departments in the United Kingdom to determine the type of dosemeters used for in vivo measurements inside and outside X-ray treatment fields, and whether any correction is made for energy dependence when the dose to critical organs outside the main beam is estimated. 44 responses were received. 11 centres used a semi-conductor for central axis dosimetry compared with only two centres which used thermoluminescent dosimetry (TLD). 37 centres carried out dosimetry measurements outside the main beam; 25 centres used TLD and 12 centres used a semi-conductor detector. Of the 16 centres measuring the dose at both sites. 11 used a semi-conductor for the central axis measurement, but only four of those 11 changed to TLD for critical organ dosimetry despite the latter's lower variation in energy response. None of the centres stated that they made a correction for the variation in detector energy response when making measurements outside the main beam, indicating a need for a more detailed evaluation of the energy response of these detectors and the energy spectra outside the main beam.

X-ray photon correlation spectroscopy using a fast pixel array detector with a grid mask resolution enhancer.

PubMed

Hoshino, Taiki; Kikuchi, Moriya; Murakami, Daiki; Harada, Yoshiko; Mitamura, Koji; Ito, Kiminori; Tanaka, Yoshihito; Sasaki, Sono; Takata, Masaki; Jinnai, Hiroshi; Takahara, Atsushi

2012-11-01

The performance of a fast pixel array detector with a grid mask resolution enhancer has been demonstrated for X-ray photon correlation spectroscopy (XPCS) measurements to investigate fast dynamics on a microscopic scale. A detecting system, in which each pixel of a single-photon-counting pixel array detector, PILATUS, is covered by grid mask apertures, was constructed for XPCS measurements of silica nanoparticles in polymer melts. The experimental results are confirmed to be consistent by comparison with other independent experiments. By applying this method, XPCS measurements can be carried out by customizing the hole size of the grid mask to suit the experimental conditions, such as beam size, detector size and sample-to-detector distance.

Methods for increasing the sensitivity of gamma-ray imagers

DOEpatents

Mihailescu, Lucian [Pleasanton, CA; Vetter, Kai M [Alameda, CA; Chivers, Daniel H [Fremont, CA

2012-02-07

Methods are presented that increase the position resolution and granularity of double sided segmented semiconductor detectors. These methods increase the imaging resolution capability of such detectors, either used as Compton cameras, or as position sensitive radiation detectors in imagers such as SPECT, PET, coded apertures, multi-pinhole imagers, or other spatial or temporal modulated imagers.

Systems for increasing the sensitivity of gamma-ray imagers

DOEpatents

Mihailescu, Lucian; Vetter, Kai M.; Chivers, Daniel H.

2012-12-11

Systems that increase the position resolution and granularity of double sided segmented semiconductor detectors are provided. These systems increase the imaging resolution capability of such detectors, either used as Compton cameras, or as position sensitive radiation detectors in imagers such as SPECT, PET, coded apertures, multi-pinhole imagers, or other spatial or temporal modulated imagers.

Multimode imaging device

DOEpatents

Mihailescu, Lucian; Vetter, Kai M

2013-08-27

Apparatus for detecting and locating a source of gamma rays of energies ranging from 10-20 keV to several MeV's includes plural gamma ray detectors arranged in a generally closed extended array so as to provide Compton scattering imaging and coded aperture imaging simultaneously. First detectors are arranged in a spaced manner about a surface defining the closed extended array which may be in the form a circle, a sphere, a square, a pentagon or higher order polygon. Some of the gamma rays are absorbed by the first detectors closest to the gamma source in Compton scattering, while the photons that go unabsorbed by passing through gaps disposed between adjacent first detectors are incident upon second detectors disposed on the side farthest from the gamma ray source, where the first spaced detectors form a coded aperture array for two or three dimensional gamma ray source detection.

Elemental X-ray Imaging Using the Maia Detector Array: The Benefits and Challenges of Large Solid-Angle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryan, C.G.; De Geronimo, G.; Kirkham, R.

2009-11-13

The fundamental parameter method for quantitative SXRF and PIXE analysis and imaging using the dynamic analysis method is extended to model the changing X-ray yields and detector sensitivity with angle across large detector arrays. The method is implemented in the GeoPIXE software and applied to cope with the large solid-angle of the new Maia 384 detector array and its 96 detector prototype developed by CSIRO and BNL for SXRF imaging applications at the Australian and NSLS synchrotrons. Peak-to-background is controlled by mitigating charge-sharing between detectors through careful optimization of a patterned molybdenum absorber mask. A geological application demonstrates the capabilitymore » of the method to produce high definition elemental images up to {approx}100 M pixels in size.« less

The energy spectrum of cosmic rays above 1017.2 eV measured by the fluorescence detectors of the Telescope Array experiment in seven years

NASA Astrophysics Data System (ADS)

Abbasi, R. U.; Abe, M.; Abu-Zayyad, T.; Allen, M.; Azuma, R.; Barcikowski, E.; Belz, J. W.; Bergman, D. R.; Blake, S. A.; Cady, R.; Cheon, B. G.; Chiba, J.; Chikawa, M.; Cho, W. R.; Fujii, T.; Fukushima, M.; Goto, T.; Hanlon, W.; Hayashi, Y.; Hayashida, N.; Hibino, K.; Honda, K.; Ikeda, D.; Inoue, N.; Ishii, T.; Ishimori, R.; Ito, H.; Ivanov, D.; Jui, C. C. H.; Kadota, K.; Kakimoto, F.; Kalashev, O.; Kasahara, K.; Kawai, H.; Kawakami, S.; Kawana, S.; Kawata, K.; Kido, E.; Kim, H. B.; Kim, J. H.; Kim, J. H.; Kitamura, S.; Kitamura, Y.; Kuzmin, V.; Kwon, Y. J.; Lan, J.; Lundquist, J. P.; Machida, K.; Martens, K.; Matsuda, T.; Matsuyama, T.; Matthews, J. N.; Minamino, M.; Mukai, Y.; Myers, I.; Nagasawa, K.; Nagataki, S.; Nakamura, T.; Nonaka, T.; Nozato, A.; Ogio, S.; Ogura, J.; Ohnishi, M.; Ohoka, H.; Oki, K.; Okuda, T.; Ono, M.; Oshima, A.; Ozawa, S.; Park, I. H.; Pshirkov, M. S.; Rodriguez, D. C.; Rubtsov, G.; Ryu, D.; Sagawa, H.; Sakurai, N.; Scott, L. M.; Shah, P. D.; Shibata, F.; Shibata, T.; Shimodaira, H.; Shin, B. K.; Shin, H. S.; Smith, J. D.; Sokolsky, P.; Springer, R. W.; Stokes, B. T.; Stratton, S. R.; Stroman, T. A.; Suzawa, T.; Takamura, M.; Takeda, M.; Takeishi, R.; Taketa, A.; Takita, M.; Tameda, Y.; Tanaka, H.; Tanaka, K.; Tanaka, M.; Thomas, S. B.; Thomson, G. B.; Tinyakov, P.; Tkachev, I.; Tokuno, H.; Tomida, T.; Troitsky, S.; Tsunesada, Y.; Tsutsumi, K.; Uchihori, Y.; Udo, S.; Urban, F.; Vasiloff, G.; Wong, T.; Yamane, R.; Yamaoka, H.; Yamazaki, K.; Yang, J.; Yashiro, K.; Yoneda, Y.; Yoshida, S.; Yoshii, H.; Zollinger, R.; Zundel, Z.

2016-07-01

The Telescope Array (TA) experiment is the largest detector to observe ultra-high-energy cosmic rays in the northern hemisphere. The fluorescence detectors at two stations of TA are newly constructed and have now completed seven years of steady operation. One advantage of monocular analysis of the fluorescence detectors is a lower energy threshold for cosmic rays than that of other techniques like stereoscopic observations or coincidences with the surface detector array, allowing the measurement of an energy spectrum covering three orders of magnitude in energy. Analyzing data collected during those seven years, we report the energy spectrum of cosmic rays covering a broad range of energies above 1017.2eV measured by the fluorescence detectors and a comparison with previously published results.

Germanium detectors in homeland security at PNNL

DOE PAGES

Stave, S.

2015-05-01

Neutron and gamma-ray detection is used for non-proliferation and national security applications. While lower energy resolution detectors such as NaI(Tl) have their place, high purity germanium (HPGe) also has a role to play. A detection with HPGe is often a characterization due to the very high energy resolution. However, HPGe crystals remain small and expensive leaving arrays of smaller crystals as an excellent solution. PNNL has developed two similar HPGe arrays for two very different applications. One array, the Multisensor Aerial Radiation Survey (MARS) detector is a fieldable array that has been tested on trucks, boats, and helicopters. The CASCADESmore » HPGe array is an array designed to assay samples in a low background environment. The history of HPGe arrays at PNNL and the development of MARS and CASCADES will be detailed in this paper along with some of the other applications of HPGe at PNNL.« less

Wavelength-division multiplexed optical integrated circuit with vertical diffraction grating

NASA Technical Reports Server (NTRS)

Lang, Robert J. (Inventor); Forouhar, Siamak (Inventor)

1994-01-01

A semiconductor optical integrated circuit for wave division multiplexing has a semiconductor waveguide layer, a succession of diffraction grating points in the waveguide layer along a predetermined diffraction grating contour, a semiconductor diode array in the waveguide layer having plural optical ports facing the succession of diffraction grating points along a first direction, respective semiconductor diodes in the array corresponding to respective ones of a predetermined succession of wavelengths, an optical fiber having one end thereof terminated at the waveguide layer, the one end of the optical fiber facing the succession of diffraction grating points along a second direction, wherein the diffraction grating points are spatially distributed along the predetermined contour in such a manner that the succession of diffraction grating points diffracts light of respective ones of the succession of wavelengths between the one end of the optical fiber and corresponding ones of the optical ports.

Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

2017-04-01

We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

Far-Infrared Blocked Impurity Band Detector Development

NASA Technical Reports Server (NTRS)

Hogue, H. H.; Guptill, M. T.; Monson, J. C.; Stewart, J. W.; Huffman, J. E.; Mlynczak, M. G.; Abedin, M. N.

2007-01-01

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

Turbulent chimeras in large semiconductor laser arrays

PubMed Central

Shena, J.; Hizanidis, J.; Kovanis, V.; Tsironis, G. P.

2017-01-01

Semiconductor laser arrays have been investigated experimentally and theoretically from the viewpoint of temporal and spatial coherence for the past forty years. In this work, we are focusing on a rather novel complex collective behavior, namely chimera states, where synchronized clusters of emitters coexist with unsynchronized ones. For the first time, we find such states exist in large diode arrays based on quantum well gain media with nearest-neighbor interactions. The crucial parameters are the evanescent coupling strength and the relative optical frequency detuning between the emitters of the array. By employing a recently proposed figure of merit for classifying chimera states, we provide quantitative and qualitative evidence for the observed dynamics. The corresponding chimeras are identified as turbulent according to the irregular temporal behavior of the classification measure. PMID:28165053

Turbulent chimeras in large semiconductor laser arrays

NASA Astrophysics Data System (ADS)

Shena, J.; Hizanidis, J.; Kovanis, V.; Tsironis, G. P.

2017-02-01

Semiconductor laser arrays have been investigated experimentally and theoretically from the viewpoint of temporal and spatial coherence for the past forty years. In this work, we are focusing on a rather novel complex collective behavior, namely chimera states, where synchronized clusters of emitters coexist with unsynchronized ones. For the first time, we find such states exist in large diode arrays based on quantum well gain media with nearest-neighbor interactions. The crucial parameters are the evanescent coupling strength and the relative optical frequency detuning between the emitters of the array. By employing a recently proposed figure of merit for classifying chimera states, we provide quantitative and qualitative evidence for the observed dynamics. The corresponding chimeras are identified as turbulent according to the irregular temporal behavior of the classification measure.

Advanced ACTPol Low-Frequency Array: Readout and Characterization of Prototype 27 and 39 GHz Transition Edge Sensors

NASA Astrophysics Data System (ADS)

Koopman, B. J.; Cothard, N. F.; Choi, S. K.; Crowley, K. T.; Duff, S. M.; Henderson, S. W.; Ho, S. P.; Hubmayr, J.; Gallardo, P. A.; Nati, F.; Niemack, M. D.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Vavagiakis, E. M.; Wollack, E. J.

2018-05-01

Advanced ACTPol (AdvACT) is a third-generation polarization upgrade to the Atacama Cosmology Telescope, designed to observe the cosmic microwave background (CMB). AdvACT expands on the 90 and 150 GHz transition edge sensor (TES) bolometer arrays of the ACT Polarimeter (ACTPol), adding both high-frequency (HF, 150/230 GHz) and low-frequency (LF, 27/39 GHz) multichroic arrays. The addition of the high- and low-frequency detectors allows for the characterization of synchrotron and spinning dust emission at the low frequencies and foreground emission from galactic dust and dusty star-forming galaxies at the high frequencies. The increased spectral coverage of AdvACT will enable a wide range of CMB science, such as improving constraints on dark energy, the sum of the neutrino masses, and the existence of primordial gravitational waves. The LF array will be the final AdvACT array, replacing one of the MF arrays for a single season. Prior to the fabrication of the final LF detector array, we designed and characterized prototype TES bolometers. Detector geometries in these prototypes are varied in order to inform and optimize the bolometer designs for the LF array, which requires significantly lower noise levels and saturation powers (as low as {˜ } 1 pW) than the higher-frequency detectors. Here we present results from tests of the first LF prototype TES detectors for AdvACT, including measurements of the saturation power, critical temperature, thermal conductance, and time constants. We also describe the modifications to the time-division SQUID readout architecture compared to the MF and HF arrays.

Sparsely-Bonded CMOS Hybrid Imager

NASA Technical Reports Server (NTRS)

Sun, Chao (Inventor); Jones, Todd J. (Inventor); Nikzad, Shouleh (Inventor); Newton, Kenneth W. (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce R. (Inventor); Dickie, Matthew R. (Inventor); Hoenk, Michael E. (Inventor); Wrigley, Christopher J. (Inventor); Pain, Bedabrata (Inventor)

2015-01-01

A method and device for imaging or detecting electromagnetic radiation is provided. A device structure includes a first chip interconnected with a second chip. The first chip includes a detector array, wherein the detector array comprises a plurality of light sensors and one or more transistors. The second chip includes a Read Out Integrated Circuit (ROIC) that reads out, via the transistors, a signal produced by the light sensors. A number of interconnects between the ROIC and the detector array can be less than one per light sensor or pixel.

Enhancement of concentration range of chromatographically detectable components with array detector mass spectrometry

DOEpatents

Enke, Christie

2013-02-19

Methods and instruments for high dynamic range analysis of sample components are described. A sample is subjected to time-dependent separation, ionized, and the ions dispersed with a constant integration time across an array of detectors according to the ions m/z values. Each of the detectors in the array has a dynamically adjustable gain or a logarithmic response function, producing an instrument capable of detecting a ratio of responses or 4 or more orders of magnitude.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, G. R.; Gordon, N. T.; Hall, D. J.; Ashby, M. K.; Little, J. C.; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, M. T.; Ashley, T.

2004-01-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas sensing; radiation shielding for, and non-uniformity correction of, high sensitivity staring infrared detectors; and dynamic infrared scene projection. Similarly, infrared (IR) detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We present results on negative luminescence in the mid- and long-IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1 cm×1 cm. We also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high-performance imaging is anticipated from systems which require no mechanical cooling.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, Geoff R.; Gordon, Neil T.; Hall, David J.; Little, J. Chris; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, Martin T.; Ashley, Tim

2004-02-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source" of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very higher performance imaging is anticipated from systems which require no mechanical cooling.

Infrared Negative Luminescent Devices and Higher Operating Temperature Detectors

NASA Astrophysics Data System (ADS)

Ashley, Tim

2003-03-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a source' of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high performance imaging is anticipated from systems which require no mechanical cooling.

Development of the focal plane PNCCD camera system for the X-ray space telescope eROSITA

NASA Astrophysics Data System (ADS)

Meidinger, Norbert; Andritschke, Robert; Ebermayer, Stefanie; Elbs, Johannes; Hälker, Olaf; Hartmann, Robert; Herrmann, Sven; Kimmel, Nils; Schächner, Gabriele; Schopper, Florian; Soltau, Heike; Strüder, Lothar; Weidenspointner, Georg

2010-12-01

A so-called PNCCD, a special type of CCD, was developed twenty years ago as focal plane detector for the XMM-Newton X-ray astronomy mission of the European Space Agency ESA. Based on this detector concept and taking into account the experience of almost ten years of operation in space, a new X-ray CCD type was designed by the ‘MPI semiconductor laboratory’ for an upcoming X-ray space telescope, called eROSITA (extended Roentgen survey with an imaging telescope array). This space telescope will be equipped with seven X-ray mirror systems of Wolter-I type and seven CCD cameras, placed in their foci. The instrumentation permits the exploration of the X-ray universe in the energy band from 0.3 up to 10 keV by spectroscopic measurements with a time resolution of 50 ms for a full image comprising 384×384 pixels. Main scientific goals are an all-sky survey and investigation of the mysterious ‘Dark Energy’. The eROSITA space telescope, which is developed under the responsibility of the ‘Max-Planck-Institute for extraterrestrial physics’, is a scientific payload on the new Russian satellite ‘Spectrum-Roentgen-Gamma’ (SRG). The mission is already approved by the responsible Russian and German space agencies. After launch in 2012 the destination of the satellite is Lagrange point L2. The planned observational program takes about seven years. We describe the design of the eROSITA camera system and present important test results achieved recently with the eROSITA prototype PNCCD detector. This includes a comparison of the eROSITA detector with the XMM-Newton detector.

Guided neuronal growth on arrays of biofunctionalized GaAs/InGaAs semiconductor microtubes

NASA Astrophysics Data System (ADS)

Bausch, Cornelius S.; Koitmäe, Aune; Stava, Eric; Price, Amanda; Resto, Pedro J.; Huang, Yu; Sonnenberg, David; Stark, Yuliya; Heyn, Christian; Williams, Justin C.; Dent, Erik W.; Blick, Robert H.

2013-10-01

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and potentially enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes—similar to myelin—is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Solar Photovoltaic Array With Mini-Dome Fresnel Lenses

NASA Technical Reports Server (NTRS)

Piszczor, Michael F., Jr.; O'Neill, Mark J.

1994-01-01

Mini-dome Fresnel lenses concentrate sunlight onto individual photovoltaic cells. Facets of Fresnel lens designed to refract incident light at angle of minimum deviation to minimize reflective losses. Prismatic cover on surface of each cell reduces losses by redirecting incident light away from metal contacts toward bulk of semiconductor, where it is usefully absorbed. Simple design of mini-dome concentrator array easily adaptable to automated manufacturing techniques currently used by semiconductor industry. Attractive option for variety of future space missions.

Surface preparation of substances for continuous convective assembly of fine particles

DOEpatents

Rossi, Robert

2003-01-01

A method for producing periodic nanometer-scale arrays of metal or semiconductor junctions on a clean semiconductor substrate surface is provided comprising the steps of: etching the substrate surface to make it hydrophilic, forming, under an inert atmosphere, a crystalline colloid layer on the substrate surface, depositing a metal or semiconductor material through the colloid layer onto the surface of the substrate, and removing the colloid from the substrate surface. The colloid layer is grown on the clean semiconductor surface by withdrawing the semiconductor substrate from a sol of colloid particles.

Observation of Air Shower in Uijeongbu Area using the COREA Prototype Detector System

NASA Astrophysics Data System (ADS)

Cho, Wooram; Shin, Jae-ik; Kwon, Youngjoon; Yang, Jongmann; Nam, Shinwoo; Park, Il H.; Cheon, ByungGu; Kim, Hang Bae; Bhang, Hyoung Chan; Park, Cheolyoung; Kim, Gyhyuk; Choi, Wooseok; Hwang, MyungJin; Shin, Gwangsik

2018-06-01

We report the study of high energy cosmic rays in Uijeongbu area using a cosmic-ray detector array system. The array consists of three detector stations, each of which contains a set of three scintillators and PMTs, a GPS antenna along with data acquisition system. To identify air shower signals originating from a single cosmic ray, time coincidence information is used. We devised a method for estimating the energy range of air shower data detected by an array of only three detectors, using air shower simulation and citing already known energy spectrum. Also, Fast Fourier Transform(FFT) was applied to study isotropy.

Image scanning microscopy using a SPAD detector array (Conference Presentation)

NASA Astrophysics Data System (ADS)

Castello, Marco; Tortarolo, Giorgio; Buttafava, Mauro; Tosi, Alberto; Sheppard, Colin J. R.; Diaspro, Alberto; Vicidomini, Giuseppe

2017-02-01

The use of an array of detectors can help overcoming the traditional limitation of confocal microscopy: the compromise between signal and theoretical resolution. Each element independently records a view of the sample and the final image can be reconstructed by pixel reassignment or by inverse filtering (e.g. deconvolution). In this work, we used a SPAD array of 25 detectors specifically designed for this goal and our scanning microscopy control system (Carma) to acquire the partial images and to perform online image processing. Further work will be devoted to optimize the image reconstruction step and to improve the fill-factor of the detector.

Gallium arsenide quantum well-based far infrared array radiometric imager

NASA Technical Reports Server (NTRS)

Forrest, Kathrine A.; Jhabvala, Murzy D.

1991-01-01

We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

Chemical imaging of cotton fibers using an infrared microscope and a focal-plane array detector

USDA-ARS?s Scientific Manuscript database

In this presentation, the chemical imaging of cotton fibers with an infrared microscope and a Focal-Plane Array (FPA) detector will be discussed. Infrared spectroscopy can provide us with information on the structure and quality of cotton fibers. In addition, FPA detectors allow for simultaneous spe...

Development of a 3D Brain PET Scanner Using CdTe Semiconductor Detectors and Its First Clinical Application

NASA Astrophysics Data System (ADS)

Morimoto, Y.; Ueno, Y.; Takeuchi, W.; Kojima, S.; Matsuzaki, K.; Ishitsu, T.; Umegaki, K.; Kiyanagi, Y.; Kubo, N.; Katoh, C.; Shiga, T.; Shirato, H.; Tamaki, N.

2011-10-01

Targeting improved spatial resolution, a three-dimensional positron-emission-tomography (PET) scanner employing CdTe semiconductor detectors and using depth-of-interaction (DOI) information was developed, and its physical performance was evaluated. This PET scanner is the first to use semiconductor detectors dedicated to the human brain and head-and-neck region. Imaging performance of the scanner used for 18F -fluorodeoxy glucose (FDG) scans of phantoms and human brains was evaluated. The gantry of the scanner has a 35.0-cm-diameter patient port, the trans-axial field of view (FOV) is 31.0 cm, and the axial FOV is 24.6 cm. The energy resolution averaged over all detector channels and timing resolution were 4.1% and 6.8 ns (each in FWHM), respectively. Spatial resolution measured at the center of FOV was 2.3-mm FWHM-which is one of the best resolutions achieved by human PET scanners. Noise-equivalent count ratio (NEC2R) has a maximum in the energy window of 390 to 540 keV and is 36 kcps/Bq/cm3 at 3.7 kBq/cm3 . The sensitivity of the system according to NEMA 1994 was 25.9 cps/Bq/cm3. Scatter fraction of the scanner is 37% for the energy window of 390 to 540 keV and 23% for 450 to 540 keV. Images of a hot-rod phantom and images of brain glucose metabolism show that the structural accuracy of the images obtained with the semiconductor PET scanner is higher than that possible with a conventional Bismuth Germanium Oxide (BGO) PET scanner. In addition, the developed scanner permits better delineation of the head-and-neck cancer. These results show that the semiconductor PET scanner will play a major role in the upcoming era of personalized medicine.

A LYSO crystal array readout by silicon photomultipliers as compact detector for space applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryemadhi, A.; Barner, L.; Grove, A.

Precise measurements of GeV range gamma rays help narrow down among var- ious gamma emission models and increase sensitivity for dark matter searches. Construction of precise as well as compact instruments requires detectors with high efficiency, high stopping power, excellent energy resolution, and excellent angular resolution. Fast and bright crystal scintillators coupled with small foot- print photo-detectors are suitable candidates. We prototyped a detector array consisting of four LYSO crystals where each crystal is read out by a 2x2 SensL ArrayJ60035 silicon photomultipliers. The LYSO crystals were chosen because of their good light yield, fast decay time, demonstrated radiation hardness,more » and small radiation length. Here, we used the silicon photomultiplier arrays as photo- detectors because of their small size, simple readout, low voltage operation, and immunity to magnetic elds. We also studied the detector performance in the energy range of interest by exposing it to 2-16 GeV particles produced at the Test Beam Facility of Fermi National Accelerator Laboratory.« less

High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

PubMed

Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

2016-02-01

We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams.

A LYSO crystal array readout by silicon photomultipliers as compact detector for space applications

DOE PAGES

Kryemadhi, A.; Barner, L.; Grove, A.; ...

2017-10-31

Precise measurements of GeV range gamma rays help narrow down among var- ious gamma emission models and increase sensitivity for dark matter searches. Construction of precise as well as compact instruments requires detectors with high efficiency, high stopping power, excellent energy resolution, and excellent angular resolution. Fast and bright crystal scintillators coupled with small foot- print photo-detectors are suitable candidates. We prototyped a detector array consisting of four LYSO crystals where each crystal is read out by a 2x2 SensL ArrayJ60035 silicon photomultipliers. The LYSO crystals were chosen because of their good light yield, fast decay time, demonstrated radiation hardness,more » and small radiation length. Here, we used the silicon photomultiplier arrays as photo- detectors because of their small size, simple readout, low voltage operation, and immunity to magnetic elds. We also studied the detector performance in the energy range of interest by exposing it to 2-16 GeV particles produced at the Test Beam Facility of Fermi National Accelerator Laboratory.« less

Medical imaging: Material change for X-ray detectors

NASA Astrophysics Data System (ADS)

Rowlands, John A.

2017-10-01

The X-ray sensitivity of radiology instruments is limited by the materials used in their detectors. A material from the perovskite family of semiconductors could allow lower doses of X-rays to be used for medical imaging. See Letter p.87

Semiconductor radiation detector

DOEpatents

Bell, Zane W.; Burger, Arnold

2010-03-30

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Method and system for powering and cooling semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telford, Steven J; Ladran, Anthony S

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Multi-anode microchannel arrays - New detectors for imaging and spectroscopy in space

NASA Technical Reports Server (NTRS)

Timothy, J. G.; Bybee, R. L.

1983-01-01

Consideration is given to the construction and operation of multi-anode microchannel array detector systems having formats as large as 256 x 1024 pixels. Such arrays are being developed for imaging and spectroscopy at soft X-ray, ultraviolet and visible wavelengths from balloons, sounding rockets and space probes. Both discrete-anode and coincidence-anode arrays are described. Two types of photocathode structures are evaluated: an opaque photocathode deposited directly on the curved-channel MCP and an activated cathode deposited on a proximity-focused mesh. Future work will include sensitivity optimization in the different wavelength regions and the development of detector tubes with semitransparent proximity-focused photocathodes.

Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes

DOEpatents

Kostenbauder, Adnah G.

1988-01-01

A photodetector for detecting signal pulses transmitted in an optical carrier signal relies on the generation of electron-hole pairs and the diffusion of the generated electrons and holes to the electrodes on the surface of the semiconductor detector body for generating photovoltaic pulses. The detector utilizes the interference of optical waves for generating an electron-hole grating within the semiconductor body, and, by establishing an electron-hole pair maximum at one electrode and a minimum at the other electrode, a detectable voltaic pulse is generated across the electrode.

Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes

DOEpatents

Kostenbauder, A.G.

1988-06-28

A photodetector for detecting signal pulses transmitted in an optical carrier signal relies on the generation of electron-hole pairs and the diffusion of the generated electrons and holes to the electrodes on the surface of the semiconductor detector body for generating photovoltaic pulses. The detector utilizes the interference of optical waves for generating an electron-hole grating within the semiconductor body, and, by establishing an electron-hole pair maximum at one electrode and a minimum at the other electrode, a detectable voltaic pulse is generated across the electrode. 4 figs.

Circuit for high resolution decoding of multi-anode microchannel array detectors

NASA Technical Reports Server (NTRS)

Kasle, David B. (Inventor)

1995-01-01

A circuit for high resolution decoding of multi-anode microchannel array detectors consisting of input registers accepting transient inputs from the anode array; anode encoding logic circuits connected to the input registers; midpoint pipeline registers connected to the anode encoding logic circuits; and pixel decoding logic circuits connected to the midpoint pipeline registers is described. A high resolution algorithm circuit operates in parallel with the pixel decoding logic circuit and computes a high resolution least significant bit to enhance the multianode microchannel array detector's spatial resolution by halving the pixel size and doubling the number of pixels in each axis of the anode array. A multiplexer is connected to the pixel decoding logic circuit and allows a user selectable pixel address output according to the actual multi-anode microchannel array detector anode array size. An output register concatenates the high resolution least significant bit onto the standard ten bit pixel address location to provide an eleven bit pixel address, and also stores the full eleven bit pixel address. A timing and control state machine is connected to the input registers, the anode encoding logic circuits, and the output register for managing the overall operation of the circuit.

NEW LENSLET BASED IFS WITH HIGH DETECTOR PIXEL EFFICIENCY

NASA Astrophysics Data System (ADS)

Gong, Qian

2018-01-01

Three IFS types currently used for optical design are: lenslet array, imager slicer, and lenslet array and fiber combined. Lenslet array based Integral Field Spectroscopy (IFS) is very popular for many astrophysics applications due to its compactness, simplicity, as well as cost and mass savings. The disadvantage of lenslet based IFS is its low detector pixel efficiency. Enough spacing is needed between adjacent spectral traces in cross dispersion direction to avoid wavelength cross-talk, because the same wavelength is not aligned to the same column on detector. Such as on a recent exoplanet coronagraph instrument study to support the coming astrophysics decadal survey (LUVOIR), to cover a 45 λ/D Field of View (FOV) with a spectral resolving power of 200 at shortest wavelength, a 4k x 4k detector array is needed. This large format EMCCD pushes the detector into technology development area with a low TRL. Besides the future mission, it will help WFIRST coronagraph IFS by packing all spectra into a smaller area on detector, which will reduce the chance for electrons to be trapped in pixels, and slow the detector degradation during the mission.The innovation we propose here is to increase the detector packing efficiency by grouping a number of lenslets together to form many mini slits. In other words, a number of spots (Point Spread Function at lenslet focus) are aligned into a line to resemble a mini slit. Therefore, wavelength cross-talk is no longer a concern anymore. This combines the advantage of lenslet array and imager slicer together. The isolation rows between spectral traces in cross dispersion direction can be reduced or removed. So the packing efficiency is greatly increased. Furthermore, the today’s microlithography and etching technique is capable of making such a lenslet array, which will relax the detector demand significantly. It will finally contribute to the habitable exoplanets study to analyzing their spectra from direct images. Detailed theory, design, analysis, and fabrication status will be presented.

Performance of a scintillation detector array operated with LHAASO-KM2A electronics

NASA Astrophysics Data System (ADS)

Wang, Zhen; Guo, Yiqing; Cai, Hui; Chang, Jinfan; Chen, Tianlu; Danzengluobu; Feng, Youliang; Gao, Qi; Gou, Quanbu; Guo, Yingying; Hou, Chao; Hu, Hongbo; Labaciren; Liu, Cheng; Li, Haijin; Liu, Jia; Liu, Maoyuan; Qiao, Bingqiang; Qian, Xiangli; Sheng, Xiangdong; Tian, Zhen; Wang, Qun; Xue, Liang; Yao, Yuhua; Zhang, Shaoru; Zhang, Xueyao; Zhang, Yi

2018-04-01

A scintillation detector array composed of 115 detectors and covering an area of about 20000 m2 was installed at the end of 2016 at the Yangbajing international cosmic ray observatory and has been taking data since then. The array is equipped with electronics from Large High Altitude Air Shower Observatory Square Kilometer Complex Array (LHAASO-KM2A) and, in turn, currently serves as the largest debugging and testing platform for the LHAASO-KM2A. Furthermore, the array was used to study the performance of a wide field-of-view air Cherenkov telescope by providing accurate information on the shower core, direction and energy, etc. This work is mainly dealing with the scintillation detector array. The experimental setup and the offline calibration are described in detail. Then, a thorough comparison between the data and Monte Carlo (MC) simulations is presented and a good agreement is obtained. With the even-odd method, the resolutions of the shower direction and core are measured. Finally, successful observations of the expected Moon's and Sun's shadows of cosmic rays (CRs) verify the measured angular resolution.

Novel Photon-Counting Detectors for Free-Space Communication

NASA Technical Reports Server (NTRS)

Krainak, Michael A.; Yang, Guan; Sun, Xiaoli; Lu, Wei; Merritt, Scott; Beck, Jeff

2016-01-01

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Single Photon Counting Detectors for Low Light Level Imaging Applications

NASA Astrophysics Data System (ADS)

Kolb, Kimberly

2015-10-01

This dissertation presents the current state-of-the-art of semiconductor-based photon counting detector technologies. HgCdTe linear-mode avalanche photodiodes (LM-APDs), silicon Geiger-mode avalanche photodiodes (GM-APDs), and electron-multiplying CCDs (EMCCDs) are compared via their present and future performance in various astronomy applications. LM-APDs are studied in theory, based on work done at the University of Hawaii. EMCCDs are studied in theory and experimentally, with a device at NASA's Jet Propulsion Lab. The emphasis of the research is on GM-APD imaging arrays, developed at MIT Lincoln Laboratory and tested at the RIT Center for Detectors. The GM-APD research includes a theoretical analysis of SNR and various performance metrics, including dark count rate, afterpulsing, photon detection efficiency, and intrapixel sensitivity. The effects of radiation damage on the GM-APD were also characterized by introducing a cumulative dose of 50 krad(Si) via 60 MeV protons. Extensive development of Monte Carlo simulations and practical observation simulations was completed, including simulated astronomical imaging and adaptive optics wavefront sensing. Based on theoretical models and experimental testing, both the current state-of-the-art performance and projected future performance of each detector are compared for various applications. LM-APD performance is currently not competitive with other photon counting technologies, and are left out of the application-based comparisons. In the current state-of-the-art, EMCCDs in photon counting mode out-perform GM-APDs for long exposure scenarios, though GM-APDs are better for short exposure scenarios (fast readout) due to clock-induced-charge (CIC) in EMCCDs. In the long term, small improvements in GM-APD dark current will make them superior in both long and short exposure scenarios for extremely low flux. The efficiency of GM-APDs will likely always be less than EMCCDs, however, which is particularly disadvantageous for moderate to high flux rates where dark noise and CIC are insignificant noise sources. Research into decreasing the dark count rate of GM-APDs will lead to development of imaging arrays that are competitive for low light level imaging and spectroscopy applications in the near future.

A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

PubMed

Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

2014-12-23

An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Zonal wavefront sensor with reduced number of rows in the detector array.

PubMed

Boruah, Bosanta R; Das, Abhijit

2011-07-10

In this paper, we describe a zonal wavefront sensor in which the photodetector array can have a smaller number of rows. The test wavefront is incident on a two-dimensional array of diffraction gratings followed by a single focusing lens. The periodicity and the orientation of the grating rulings of each grating can be chosen such that the +1 order beam from the gratings forms an array of focal spots in the detector plane. We show that by using a square array of zones, it is possible to generate an array of +1 order focal spots having a smaller number of rows, thus reducing the height of the required detector array. The phase profile of the test wavefront can be estimated by measuring the displacements of the +1 order focal spots for the test wavefront relative to the +1 order focal spots for a plane reference wavefront. The narrower width of the photodetector array can offer several advantages, such as a faster frame rate of the wavefront sensor, a reduced amount of cross talk between the nearby detector zones, and a decrease in the maximum thermal noise. We also present experimental results of a proof-of-concept experimental arrangement using the proposed wavefront sensing scheme. © 2011 Optical Society of America

Dynamic range considerations for EUV MAMA detectors. [Extreme UV Multianode Microchannel Array

NASA Technical Reports Server (NTRS)

Illing, Rainer M. E.; Bybee, Richard L.; Timothy, J. G.

1990-01-01

The multianode microchannel array (MAMA) has been chosen as the detector for two instruments on the ESA/NASA Solar Heliospheric Observatory. The response of the MAMA to the two extreme types of solar spectra, disk and corona, have been modeled with a view toward evaluating dynamic range effects present. The method of MAMA operation is discussed, with emphasis given to modeling the effect of electron cloud charge spreading to several detector anodes and amplifiers (n-fold events). Representative synthetic EUV spectra have been created. The detector response to these spectra is modeled by dissecting the input photon radiation field across the detector array into contributions to the various amplifier channels. The results of this dissection are shown for spectral regions across the entire wavelength region of interest. These results are used to identify regions in which total array photon counting rate or individual amplifier rate may exceed the design limits. This allows the design or operational modes to be tailored to eliminate the problem areas.

The hybrid energy spectrum of Telescope Array's Middle Drum Detector and surface array

NASA Astrophysics Data System (ADS)

Abbasi, R. U.; Abe, M.; Abu-Zayyad, T.; Allen, M. G.; Anderson, R.; Azuma, R.; Barcikowski, E.; Belz, J. W.; Bergman, D. R.; Blake, S. A.; Cady, R.; Chae, M. J.; Cheon, B. G.; Chiba, J.; Chikawa, M.; Cho, W. R.; Fujii, T.; Fukushima, M.; Goto, T.; Hanlon, W.; Hayashi, Y.; Hayashida, N.; Hibino, K.; Honda, K.; Ikeda, D.; Inoue, N.; Ishii, T.; Ishimori, R.; Ito, H.; Ivanov, D.; Jui, C. C. H.; Kadota, K.; Kakimoto, F.; Kalashev, O.; Kasahara, K.; Kawai, H.; Kawakami, S.; Kawana, S.; Kawata, K.; Kido, E.; Kim, H. B.; Kim, J. H.; Kim, J. H.; Kitamura, S.; Kitamura, Y.; Kuzmin, V.; Kwon, Y. J.; Lan, J.; Lim, S. I.; Lundquist, J. P.; Machida, K.; Martens, K.; Matsuda, T.; Matsuyama, T.; Matthews, J. N.; Minamino, M.; Mukai, K.; Myers, I.; Nagasawa, K.; Nagataki, S.; Nakamura, T.; Nonaka, T.; Nozato, A.; Ogio, S.; Ogura, J.; Ohnishi, M.; Ohoka, H.; Oki, K.; Okuda, T.; Ono, M.; Oshima, A.; Ozawa, S.; Park, I. H.; Pshirkov, M. S.; Rodriguez, D. C.; Rubtsov, G.; Ryu, D.; Sagawa, H.; Sakurai, N.; Sampson, A. L.; Scott, L. M.; Shah, P. D.; Shibata, F.; Shibata, T.; Shimodaira, H.; Shin, B. K.; Shin, H. S.; Smith, J. D.; Sokolsky, P.; Springer, R. W.; Stokes, B. T.; Stratton, S. R.; Stroman, T. A.; Suzawa, T.; Takamura, M.; Takeda, M.; Takeishi, R.; Taketa, A.; Takita, M.; Tameda, Y.; Tanaka, H.; Tanaka, K.; Tanaka, M.; Thomas, S. B.; Thomson, G. B.; Tinyakov, P.; Tkachev, I.; Tokuno, H.; Tomida, T.; Troitsky, S.; Tsunesada, Y.; Tsutsumi, K.; Uchihori, Y.; Udo, S.; Urban, F.; Vasiloff, G.; Wong, T.; Yamane, R.; Yamaoka, H.; Yamazaki, K.; Yang, J.; Yashiro, K.; Yoneda, Y.; Yoshida, S.; Yoshii, H.; Zollinger, R.; Zundel, Z.

2015-08-01

The Telescope Array experiment studies ultra high energy cosmic rays using a hybrid detector. Fluorescence telescopes measure the longitudinal development of the extensive air shower generated when a primary cosmic ray particle interacts with the atmosphere. Meanwhile, scintillator detectors measure the lateral distribution of secondary shower particles that hit the ground. The Middle Drum (MD) fluorescence telescope station consists of 14 telescopes from the High Resolution Fly's Eye (HiRes) experiment, providing a direct link back to the HiRes measurements. Using the scintillator detector data in conjunction with the telescope data improves the geometrical reconstruction of the showers significantly, and hence, provides a more accurate reconstruction of the energy of the primary particle. The Middle Drum hybrid spectrum is presented and compared to that measured by the Middle Drum station in monocular mode. Further, the hybrid data establishes a link between the Middle Drum data and the surface array. A comparison between the Middle Drum hybrid energy spectrum and scintillator Surface Detector (SD) spectrum is also shown.

Heterostructured TiO2/NiTiO3 Nanorod Arrays for Inorganic Sensitized Solar Cells with Significantly Enhanced Photovoltaic Performance and Stability.

PubMed

Li, Yue-Ying; Wang, Jian-Gan; Sun, Huan-Huan; Wei, Bingqing

2018-04-11

Organic dyes used in the conventional dye-sensitized solar cells (DSSCs) suffer from poor light stability and high cost. In this work, we demonstrate a new inorganic sensitized solar cell based on ordered one-dimensional semiconductor nanorod arrays of TiO 2 /NiTiO 3 (NTO) heterostructures prepared via a facile two-step hydrothermal approach. The semiconductor heterostructure arrays are highly desirable and promising for DSSCs because of their direct charge transport capability and slow charge recombination rate. The low-cost NTO inorganic semiconductor possesses an appropriate band gap that matches well with TiO 2 , which behaves like a "dye" to enable efficient light harvesting and fast electron-hole separation. The solar cells constructed by the ordered TiO 2 /NTO heterostructure photoanodes show a significantly improved power conversion efficiency, high fill factor, and more promising, outstanding life stability. The present work will open up an avenue to design heterostructured inorganics for high-performance solar cells.

Integrated semiconductor quantum dot scintillation detector: Ultimate limit for speed and light yield

DOE PAGES

Oktyabrsky, Serge; Yakimov, Michael; Tokranov, Vadim; ...

2016-03-30

Here, a picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 10 15 cm -3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication ofmore » a semiconductor scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm 3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov, A. E., E-mail: bolotnik@bnl.gov; Ackley, K.; Camarda, G. S.

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm{sup 3} detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We presentmore » the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm 3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readoutmore » electronics. The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

Progress on uncooled PbSe detectors for low-cost applications

NASA Astrophysics Data System (ADS)

Vergara, German; Gomez, Luis J.; Villamayor, Victor; Alvarez, M.; Rodrigo, Maria T.; del Carmen Torquemada, Maria; Sanchez, Fernando J.; Verdu, Marina; Diezhandino, Jorge; Rodriguez, Purificacion; Catalan, Irene; Almazan, Rosa; Plaza, Julio; Montojo, Maria T.

2004-08-01

This work reports on progress on development of polycrystalline PbSe infrared detectors at the Centro de Investigacion y Desarrollo de la Armada (CIDA). Since mid nineties, the CIDA owns an innovative technology for processing uncooled MWIR detectors of polycrystalline PbSe. Based on this technology, some applications have been developed. However, future applications demand smarter, more complex, faster yet cheaper detectors. Aiming to open new perspectives to polycrystalline PbSe detectors, we are currently working on different directions: 1) Processing of 2D arrays: a) Designing and processing low density x-y addressed arrays with 16x16 and 32x32 elements, as an extension of our standard technology. b) Trying to make compatible standard CMOS and polycrystalline PbSe technologies in order to process monolithic large format arrays. 2) Adding new features to the detector such as monolithically integrated spectral discrimination.

Recent developments in materials and detectors for the infrared; Proceedings of the Meeting, Cannes, France, November 25, 26, 1985

NASA Technical Reports Server (NTRS)

Morten, F. D. (Editor); Seeley, John S. (Editor)

1986-01-01

The present conference on advancements in IR-sensitive materials and detector technologies employing them gives attention to thermal detectors, focal plane array processing detectors, novel detector designs, general properties of IR optics materials, and preparation methods for such materials. Specific topics encompass the fabrication of InSb MIS structures prepared by photochemical vapor deposition, IR heterodyne detectors employing cadmium mercury telluride, low microphony pyroelectric arrays, IR detection based on minority carrier extrusion, longwave reststrahl in IR crystals, and molecular beam techniques for optical thin film fabrication.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jornet, N; Carrasco de Fez, P; Jordi, O

Purpose: To evaluate the accuracy in total scatter factor (Sc,p) determination for small fields using commercial plastic scintillator detector (PSD). The manufacturer's spectral discrimination method to subtract Cerenkov light from the signal is discussed. Methods: Sc,p for field sizes ranging from 0.5 to 10 cm were measured using PSD Exradin (Standard Imaging) connected to two channel electrometer measuring the signals in two different spectral regions to subtract the Cerenkov signal from the PSD signal. A Pinpoint ionisation chamber 31006 (PTW) and a non-shielded semiconductor detector EFD (Scanditronix) were used for comparison. Measures were performed for a 6 MV X-ray beam.more » The Sc,p are measured at 10 cm depth in water for a SSD=100 cm and normalized to a 10'10 cm{sup 2} field size at the isocenter. All detectors were placed with their symmetry axis parallel to the beam axis.We followed the manufacturer's recommended calibration methodology to subtract the Cerenkov contribution to the signal as well as a modified method using smaller field sizes. The Sc,p calculated by using both calibration methodologies were compared. Results: Sc,p measured with the semiconductor and the PinPoint detectors agree, within 1.5%, for field sizes between 10'10 and 1'1 cm{sup 2}. Sc,p measured with the PSD using the manufacturer's calibration methodology were systematically 4% higher than those measured with the semiconductor detector for field sizes smaller than 5'5 cm{sup 2}. By using a modified calibration methodology for smalls fields and keeping the manufacturer calibration methodology for fields larger than 5'5cm{sup 2} field Sc,p matched semiconductor results within 2% field sizes larger than 1.5 cm. Conclusion: The calibration methodology proposed by the manufacturer is not appropriate for dose measurements in small fields. The calibration parameters are not independent of the incident radiation spectrum for this PSD. This work was partially financed by grant 2012 of Barcelona board of the AECC.« less

High field CdS detector for infrared radiation

NASA Technical Reports Server (NTRS)

Tyagi, R. C.; Boer, K. W.; Hadley, H. C.; Robertson, J. B.

1972-01-01

New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery.

Photoacoustic-based detector for infrared laser spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scholz, L.; Palzer, S., E-mail: stefan.palzer@imtek.uni-freiburg.de

In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number densitymore » and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2v{sub 3} band at 6046.95 cm{sup −1} using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.« less

Nondestructive assessment of the severity of occlusal caries lesions with near-infrared imaging at 1310 nm.

PubMed

Lee, Chulsung; Lee, Dustin; Darling, Cynthia L; Fried, Daniel

2010-01-01

The high transparency of dental enamel in the near-infrared (NIR) at 1310 nm can be exploited for imaging dental caries without the use of ionizing radiation. The objective of this study is to determine whether the lesion contrast derived from NIR imaging in both transmission and reflectance can be used to estimate lesion severity. Two NIR imaging detector technologies are investigated: a new Ge-enhanced complementary metal-oxide-semiconductor (CMOS)-based NIR imaging camera, and an InGaAs focal plane array (FPA). Natural occlusal caries lesions are imaged with both cameras at 1310 nm, and the image contrast between sound and carious regions is calculated. After NIR imaging, teeth are sectioned and examined using polarized light microscopy (PLM) and transverse microradiography (TMR) to determine lesion severity. Lesions are then classified into four categories according to lesion severity. Lesion contrast increases significantly with lesion severity for both cameras (p<0.05). The Ge-enhanced CMOS camera equipped with the larger array and smaller pixels yields higher contrast values compared with the smaller InGaAs FPA (p<0.01). Results demonstrate that NIR lesion contrast can be used to estimate lesion severity.

Nondestructive assessment of the severity of occlusal caries lesions with near-infrared imaging at 1310 nm

PubMed Central

Lee, Chulsung; Lee, Dustin; Darling, Cynthia L.; Fried, Daniel

2010-01-01

The high transparency of dental enamel in the near-infrared (NIR) at 1310 nm can be exploited for imaging dental caries without the use of ionizing radiation. The objective of this study is to determine whether the lesion contrast derived from NIR imaging in both transmission and reflectance can be used to estimate lesion severity. Two NIR imaging detector technologies are investigated: a new Ge-enhanced complementary metal-oxide-semiconductor (CMOS)-based NIR imaging camera, and an InGaAs focal plane array (FPA). Natural occlusal caries lesions are imaged with both cameras at 1310 nm, and the image contrast between sound and carious regions is calculated. After NIR imaging, teeth are sectioned and examined using polarized light microscopy (PLM) and transverse microradiography (TMR) to determine lesion severity. Lesions are then classified into four categories according to lesion severity. Lesion contrast increases significantly with lesion severity for both cameras (p<0.05). The Ge-enhanced CMOS camera equipped with the larger array and smaller pixels yields higher contrast values compared with the smaller InGaAs FPA (p<0.01). Results demonstrate that NIR lesion contrast can be used to estimate lesion severity. PMID:20799842

Nondestructive assessment of the severity of occlusal caries lesions with near-infrared imaging at 1310 nm

NASA Astrophysics Data System (ADS)

Lee, Chulsung; Lee, Dustin; Darling, Cynthia L.; Fried, Daniel

2010-07-01

The high transparency of dental enamel in the near-infrared (NIR) at 1310 nm can be exploited for imaging dental caries without the use of ionizing radiation. The objective of this study is to determine whether the lesion contrast derived from NIR imaging in both transmission and reflectance can be used to estimate lesion severity. Two NIR imaging detector technologies are investigated: a new Ge-enhanced complementary metal-oxide-semiconductor (CMOS)-based NIR imaging camera, and an InGaAs focal plane array (FPA). Natural occlusal caries lesions are imaged with both cameras at 1310 nm, and the image contrast between sound and carious regions is calculated. After NIR imaging, teeth are sectioned and examined using polarized light microscopy (PLM) and transverse microradiography (TMR) to determine lesion severity. Lesions are then classified into four categories according to lesion severity. Lesion contrast increases significantly with lesion severity for both cameras (p<0.05). The Ge-enhanced CMOS camera equipped with the larger array and smaller pixels yields higher contrast values compared with the smaller InGaAs FPA (p<0.01). Results demonstrate that NIR lesion contrast can be used to estimate lesion severity.

Ultrafast dynamics of metal plasmons induced by 2D semiconductor excitons in hybrid nanostructure arrays

DOE PAGES

Boulesbaa, Abdelaziz; Babicheva, Viktoriia E.; Wang, Kai; ...

2016-11-17

With the advanced progress achieved in the field of nanotechnology, localized surface plasmons resonances (LSPRs) are actively considered to improve the efficiency of metal-based photocatalysis, photodetection, and photovoltaics. Here, we report on the exchange of energy and electric charges in a hybrid composed of a two-dimensional tungsten disulfide (2D-WS 2) monolayer and an array of aluminum (Al) nanodisks. Femtosecond pump-probe spectroscopy results indicate that within ~830 fs after photoexcitation of the 2D-WS 2 semiconductor, energy transfer from the 2D-WS 2 excitons excites the plasmons of the Al array. Then, upon the radiative and/or nonradiative damping of these excited plasmons, energymore » and/or electron transfer back to the 2D-WS 2 semiconductor takes place as indicated by an increase in the reflected probe at the 2D exciton transition energies at later time-delays. This simultaneous exchange of energy and charges between the metal and the 2D-WS 2 semiconductor resulted in an extension of the average lifetime of the 2D-excitons from ~15 to ~58 ps in absence and presence of the Al array, respectively. Furthermore, the indirectly excited plasmons were found to live as long as the 2D-WS 2 excitons exist. Furthermore, the demonstrated ability to generate exciton-plasmons coupling in a hybrid nanostructure may open new opportunities for optoelectronic applications such as plasmonic-based photodetection and photocatalysis.« less

First Results from the Telescope Array RAdar (TARA) Detector

NASA Astrophysics Data System (ADS)

Myers, Isaac

2014-03-01

The TARA cosmic ray detector has been in operation for about a year and a half. This bi-static radar detector was designed with the goal of detecting cosmic rays in coincidence with Telescope Array (TA). A new high power (25 kW, 5 MW effective radiated power) transmitter and antenna array and 250 MHz fPGA-based DAQ have been operational since August 2013. The eight-Yagi antenna array broadcasts a 54.1 MHz tone across the TA surface detector array toward our receiver station 50 km away at the Long Ridge fluorescence detector. Receiving antennas feed an intelligent DAQ that self-adjusts to the fluctuating radio background and which employs a bank of matched filters that search in real-time for chirp radar echoes. Millions of triggers have been collected in this mode. A second mode is a forced trigger scheme that uses the trigger status of the fluorescence telescope. Of those triggers collected in FD-triggered mode, about 800 correspond with well-reconstructed TA events. I will describe recent advancements in calibrating key components in the transmitter and receiver RF chains and the analysis of FD-triggered data. Work supported by W.M. Keck Foundation and NSF.

Conceptual design of the early implementation of the NEutron Detector Array (NEDA) with AGATA

NASA Astrophysics Data System (ADS)

Hüyük, Tayfun; Di Nitto, Antonio; Jaworski, Grzegorz; Gadea, Andrés; Javier Valiente-Dobón, José; Nyberg, Johan; Palacz, Marcin; Söderström, Pär-Anders; Jose Aliaga-Varea, Ramon; de Angelis, Giacomo; Ataç, Ayşe; Collado, Javier; Domingo-Pardo, Cesar; Egea, Francisco Javier; Erduran, Nizamettin; Ertürk, Sefa; de France, Gilles; Gadea, Rafael; González, Vicente; Herrero-Bosch, Vicente; Kaşkaş, Ayşe; Modamio, Victor; Moszynski, Marek; Sanchis, Enrique; Triossi, Andrea; Wadsworth, Robert

2016-03-01

The NEutron Detector Array (NEDA) project aims at the construction of a new high-efficiency compact neutron detector array to be coupled with large γ-ray arrays such as AGATA. The application of NEDA ranges from its use as selective neutron multiplicity filter for fusion-evaporation reaction to a large solid angle neutron tagging device. In the present work, possible configurations for the NEDA coupled with the Neutron Wall for the early implementation with AGATA has been simulated, using Monte Carlo techniques, in order to evaluate their performance figures. The goal of this early NEDA implementation is to improve, with respect to previous instruments, efficiency and capability to select multiplicity for fusion-evaporation reaction channels in which 1, 2 or 3 neutrons are emitted. Each NEDA detector unit has the shape of a regular hexagonal prism with a volume of about 3.23l and it is filled with the EJ301 liquid scintillator, that presents good neutron- γ discrimination properties. The simulations have been performed using a fusion-evaporation event generator that has been validated with a set of experimental data obtained in the 58Ni + 56Fe reaction measured with the Neutron Wall detector array.

A depth-of-interaction PET detector using mutual gain-equalized silicon photomultiplier

DOE Office of Scientific and Technical Information (OSTI.GOV)

W. Xi, A.G, Weisenberger, H. Dong, Brian Kross, S. Lee, J. McKisson, Carl Zorn

We developed a prototype high resolution, high efficiency depth-encoding detector for PET applications based on dual-ended readout of LYSO array with two silicon photomultipliers (SiPMs). Flood images, energy resolution, and depth-of-interaction (DOI) resolution were measured for a LYSO array - 0.7 mm in crystal pitch and 10 mm in thickness - with four unpolished parallel sides. Flood images were obtained such that individual crystal element in the array is resolved. The energy resolution of the entire array was measured to be 33%, while individual crystal pixel elements utilizing the signal from both sides ranged from 23.3% to 27%. By applyingmore » a mutual-gain equalization method, a DOI resolution of 2 mm for the crystal array was obtained in the experiments while simulations indicate {approx}1 mm DOI resolution could possibly be achieved. The experimental DOI resolution can be further improved by obtaining revised detector supporting electronics with better energy resolutions. This study provides a detailed detector calibration and DOI response characterization of the dual-ended readout SiPM-based PET detectors, which will be important in the design and calibration of a PET scanner in the future.« less

Large-area, laterally-grown epitaxial semiconductor layers

DOEpatents

Han, Jung; Song, Jie; Chen, Danti

2017-07-18

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Dual source and dual detector arrays tetrahedron beam computed tomography for image guided radiotherapy.

PubMed

Kim, Joshua; Lu, Weiguo; Zhang, Tiezhi

2014-02-07

Cone-beam computed tomography (CBCT) is an important online imaging modality for image guided radiotherapy. But suboptimal image quality and the lack of a real-time stereoscopic imaging function limit its implementation in advanced treatment techniques, such as online adaptive and 4D radiotherapy. Tetrahedron beam computed tomography (TBCT) is a novel online imaging modality designed to improve on the image quality provided by CBCT. TBCT geometry is flexible, and multiple detector and source arrays can be used for different applications. In this paper, we describe a novel dual source-dual detector TBCT system that is specially designed for LINAC radiation treatment machines. The imaging system is positioned in-line with the MV beam and is composed of two linear array x-ray sources mounted aside the electrical portal imaging device and two linear arrays of x-ray detectors mounted below the machine head. The detector and x-ray source arrays are orthogonal to each other, and each pair of source and detector arrays forms a tetrahedral volume. Four planer images can be obtained from different view angles at each gantry position at a frame rate as high as 20 frames per second. The overlapped regions provide a stereoscopic field of view of approximately 10-15 cm. With a half gantry rotation, a volumetric CT image can be reconstructed having a 45 cm field of view. Due to the scatter rejecting design of the TBCT geometry, the system can potentially produce high quality 2D and 3D images with less radiation exposure. The design of the dual source-dual detector system is described, and preliminary results of studies performed on numerical phantoms and simulated patient data are presented.

Dual source and dual detector arrays tetrahedron beam computed tomography for image guided radiotherapy

NASA Astrophysics Data System (ADS)

Kim, Joshua; Lu, Weiguo; Zhang, Tiezhi

2014-02-01

Cone-beam computed tomography (CBCT) is an important online imaging modality for image guided radiotherapy. But suboptimal image quality and the lack of a real-time stereoscopic imaging function limit its implementation in advanced treatment techniques, such as online adaptive and 4D radiotherapy. Tetrahedron beam computed tomography (TBCT) is a novel online imaging modality designed to improve on the image quality provided by CBCT. TBCT geometry is flexible, and multiple detector and source arrays can be used for different applications. In this paper, we describe a novel dual source-dual detector TBCT system that is specially designed for LINAC radiation treatment machines. The imaging system is positioned in-line with the MV beam and is composed of two linear array x-ray sources mounted aside the electrical portal imaging device and two linear arrays of x-ray detectors mounted below the machine head. The detector and x-ray source arrays are orthogonal to each other, and each pair of source and detector arrays forms a tetrahedral volume. Four planer images can be obtained from different view angles at each gantry position at a frame rate as high as 20 frames per second. The overlapped regions provide a stereoscopic field of view of approximately 10-15 cm. With a half gantry rotation, a volumetric CT image can be reconstructed having a 45 cm field of view. Due to the scatter rejecting design of the TBCT geometry, the system can potentially produce high quality 2D and 3D images with less radiation exposure. The design of the dual source-dual detector system is described, and preliminary results of studies performed on numerical phantoms and simulated patient data are presented.

High-performance ferroelectric and magnetoresistive materials for next-generation thermal detector arrays

NASA Astrophysics Data System (ADS)

Todd, Michael A.; Donohue, Paul P.; Watton, Rex; Williams, Dennis J.; Anthony, Carl J.; Blamire, Mark G.

2002-12-01

This paper discusses the potential thermal imaging performance achievable from thermal detector arrays and concludes that the current generation of thin-film ferroelectric and resistance bolometer based detector arrays are limited by the detector materials used. It is proposed that the next generation of large uncooled focal plane arrays will need to look towards higher performance detector materials - particularly if they aim to approach the fundamental performance limits and compete with cooled photon detector arrays. Two examples of bolometer thin-film materials are described that achieve high performance from operating around phase transitions. The material Lead Scandium Tantalate (PST) has a paraelectric-to-ferroelectric phase transition around room temperature and is used with an applied field in the dielectric bolometer mode for thermal imaging. PST films grown by sputtering and liquid-source CVD have shown merit figures for thermal imaging a factor of 2 to 3 times higher than PZT-based pyroelectric thin films. The material Lanthanum Calcium Manganite (LCMO) has a paramagnetic to ferromagnetic phase transition around -20oC. This paper describes recent measurements of TCR and 1/f noise in pulsed laser-deposited LCMO films on Neodymium Gallate substrates. These results show that LCMO not only has high TCR's - up to 30%/K - but also low 1/f excess noise, with bolometer merit figures at least an order of magnitude higher than Vanadium Oxide, making it ideal for the next generation of microbolometer arrays. These high performance properties come at the expense of processing complexities and novel device designs will need to be introduced to realize the potential of these materials in the next generation of thermal detectors.

Quantum Well and Quantum Dot Modeling for Advanced Infrared Detectors and Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Ting, David; Gunapala, S. D.; Bandara, S. V.; Hill, C. J.

2006-01-01

This viewgraph presentation reviews the modeling of Quantum Well Infrared Detectors (QWIP) and Quantum Dot Infrared Detectors (QDIP) in the development of Focal Plane Arrays (FPA). The QWIP Detector being developed is a dual band detector. It is capable of running on two bands Long-Wave Infrared (LWIR) and Medium Wavelength Infrared (MWIR). The same large-format dual-band FPA technology can be applied to Quantum Dot Infrared Photodetector (QDIP) with no modification, once QDIP exceeds QWIP in single device performance. Details of the devices are reviewed.

Update on the Fabrication and Performance of 2-D Arrays of Superconducting Magnesium Diboride (MgB2) Thermal Detectors for Outer-Planets Exploration

NASA Technical Reports Server (NTRS)

Lakew, Brook; Aslam, S.

2011-01-01

Detectors with better performance than the current thermopile detectors that operate at room temperature will be needed at the focal plane of far-infrared instruments on future planetary exploration missions. We will present an update on recent results from the 2-D array of MgB2 thermal detectors being currently developed at NASA Goddard. Noise and sensitivity results will be presented and compared to thermal detectors currently in use on planetary missions.

Photon-counting array detectors for space and ground-based studies at ultraviolet and vacuum ultraviolet /VUV/ wavelengths

NASA Technical Reports Server (NTRS)

Timothy, J. G.; Bybee, R. L.

1981-01-01

The Multi-Anode Microchannel Arrays (MAMAs) are a family of photoelectric photon-counting array detectors, with formats as large as (256 x 1024)-pixels that can be operated in a windowless configuration at vacuum ultraviolet (VUV) and soft X-ray wavelengths or in a sealed configuration at ultraviolet and visible wavelengths. This paper describes the construction and modes of operation of (1 x 1024)-pixel and (24 x 1024)-pixel MAMA detector systems that are being built and qualified for use in sounding-rocket spectrometers for solar and stellar observations at wavelengths below 1300 A. The performance characteristics of the MAMA detectors at ultraviolet and VUV wavelengths are also described.

Large arrays of dual-polarized multichroic TES detectors for CMB measurements with the SPT-3G receiver

DOE PAGES

Holland, Wayne S.; Zmuidzinas, Jonas; Posada, Chrystian M.; ...

2016-07-19

Now, detectors for cosmic microwave background (CMB) experiments are background limited, so a straightforward alternative to improve sensitivity is to increase the number of detectors. Large arrays of multichroic pixels constitute an economical approach to increasing the number of detectors within a given focal plane area. We present the fabrication of large arrays of dual-polarized multichroic transition-edge-sensor (TES) bolometers for the South Pole Telescope third-generation CMB receiver (SPT-3G). The complete SPT-3G receiver will have 2690 pixels, each with six detectors, allowing for individual measurement of three spectral bands (centered at 95 GHz, 150 GHz and 220 GHz) in two orthogonalmore » polarizations. In total, the SPT-3G focal plane will have 16140 detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a niobium microstrip transmission line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed to the respective Ti/Au TES sensors. Detectors are read out using a 64x frequency domain multiplexing (fMux) scheme. The microfabrication of the SPT-3G detector arrays involves a total of 18 processes, including 13 lithography steps. Together with the fabrication process, the effect of processing on the Ti/Au TES's T-c is discussed. In addition, detectors fabricated with Ti/Au TES films with Tc between 400 mK 560 mK are presented and their thermal characteristics are evaluated. Optical characterization of the arrays is presented as well, indicating that the response of the detectors is in good agreement with the design values for all three spectral bands (95 GHz, 150 GHz, and 220 GHz). The measured optical efficiency of the detectors is between 0.3 and 0.8. Our results discussed here are extracted from a batch of research of development wafers used to develop the baseline process for the fabrication of the arrays of detectors to be deployed with the SPT-3G receiver. Results from these research and development wafers have been incorporated into the fabrication process to get the baseline fabrication process presented here. SPT-3G is scheduled to deploy to the South Pole Telescope in late 2016.« less

Large arrays of dual-polarized multichroic TES detectors for CMB measurements with the SPT-3G receiver

DOE Office of Scientific and Technical Information (OSTI.GOV)

Holland, Wayne S.; Zmuidzinas, Jonas; Posada, Chrystian M.

Now, detectors for cosmic microwave background (CMB) experiments are background limited, so a straightforward alternative to improve sensitivity is to increase the number of detectors. Large arrays of multichroic pixels constitute an economical approach to increasing the number of detectors within a given focal plane area. We present the fabrication of large arrays of dual-polarized multichroic transition-edge-sensor (TES) bolometers for the South Pole Telescope third-generation CMB receiver (SPT-3G). The complete SPT-3G receiver will have 2690 pixels, each with six detectors, allowing for individual measurement of three spectral bands (centered at 95 GHz, 150 GHz and 220 GHz) in two orthogonalmore » polarizations. In total, the SPT-3G focal plane will have 16140 detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a niobium microstrip transmission line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed to the respective Ti/Au TES sensors. Detectors are read out using a 64x frequency domain multiplexing (fMux) scheme. The microfabrication of the SPT-3G detector arrays involves a total of 18 processes, including 13 lithography steps. Together with the fabrication process, the effect of processing on the Ti/Au TES's T-c is discussed. In addition, detectors fabricated with Ti/Au TES films with Tc between 400 mK 560 mK are presented and their thermal characteristics are evaluated. Optical characterization of the arrays is presented as well, indicating that the response of the detectors is in good agreement with the design values for all three spectral bands (95 GHz, 150 GHz, and 220 GHz). The measured optical efficiency of the detectors is between 0.3 and 0.8. Our results discussed here are extracted from a batch of research of development wafers used to develop the baseline process for the fabrication of the arrays of detectors to be deployed with the SPT-3G receiver. Results from these research and development wafers have been incorporated into the fabrication process to get the baseline fabrication process presented here. SPT-3G is scheduled to deploy to the South Pole Telescope in late 2016.« less

Large arrays of dual-polarized multichroic TES detectors for CMB measurements with the SPT-3G receiver

NASA Astrophysics Data System (ADS)

Posada, Chrystian M.; Ade, Peter A. R.; Anderson, Adam J.; Avva, Jessica; Ahmed, Zeeshan; Arnold, Kam S.; Austermann, Jason; Bender, Amy N.; Benson, Bradford A.; Bleem, Lindsey; Byrum, Karen; Carlstrom, John E.; Carter, Faustin W.; Chang, Clarence; Cho, Hsiao-Mei; Cukierman, Ari; Czaplewski, David A.; Ding, Junjia; Divan, Ralu N. S.; de Haan, Tijmen; Dobbs, Matt; Dutcher, Daniel; Everett, Wenderline; Gannon, Renae N.; Guyser, Robert J.; Halverson, Nils W.; Harrington, Nicholas L.; Hattori, Kaori; Henning, Jason W.; Hilton, Gene C.; Holzapfel, William L.; Huang, Nicholas; Irwin, Kent D.; Jeong, Oliver; Khaire, Trupti; Korman, Milo; Kubik, Donna L.; Kuo, Chao-Lin; Lee, Adrian T.; Leitch, Erik M.; Lendinez Escudero, Sergi; Meyer, Stephan S.; Miller, Christina S.; Montgomery, Joshua; Nadolski, Andrew; Natoli, Tyler J.; Nguyen, Hogan; Novosad, Valentyn; Padin, Stephen; Pan, Zhaodi; Pearson, John E.; Rahlin, Alexandra; Reichardt, Christian L.; Ruhl, John E.; Saliwanchik, Benjamin; Shirley, Ian; Sayre, James T.; Shariff, Jamil A.; Shirokoff, Erik D.; Stan, Liliana; Stark, Antony A.; Sobrin, Joshua; Story, Kyle; Suzuki, Aritoki; Tang, Qing Yang; Thakur, Ritoban B.; Thompson, Keith L.; Tucker, Carole E.; Vanderlinde, Keith; Vieira, Joaquin D.; Wang, Gensheng; Whitehorn, Nathan; Yefremenko, Volodymyr; Yoon, Ki Won

2016-07-01

Detectors for cosmic microwave background (CMB) experiments are now essentially background limited, so a straightforward alternative to improve sensitivity is to increase the number of detectors. Large arrays of multichroic pixels constitute an economical approach to increasing the number of detectors within a given focal plane area. Here, we present the fabrication of large arrays of dual-polarized multichroic transition-edge-sensor (TES) bolometers for the South Pole Telescope third-generation CMB receiver (SPT-3G). The complete SPT-3G receiver will have 2690 pixels, each with six detectors, allowing for individual measurement of three spectral bands (centered at 95 GHz, 150 GHz and 220 GHz) in two orthogonal polarizations. In total, the SPT-3G focal plane will have 16140 detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a niobium microstrip transmission line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed to the respective Ti/Au TES sensors. Detectors are read out using a 64x frequency domain multiplexing (fMux) scheme. The microfabrication of the SPT-3G detector arrays involves a total of 18 processes, including 13 lithography steps. Together with the fabrication process, the effect of processing on the Ti/Au TES's Tc is discussed. In addition, detectors fabricated with Ti/Au TES films with Tc between 400 mK 560 mK are presented and their thermal characteristics are evaluated. Optical characterization of the arrays is presented as well, indicating that the response of the detectors is in good agreement with the design values for all three spectral bands (95 GHz, 150 GHz, and 220 GHz). The measured optical efficiency of the detectors is between 0.3 and 0.8. Results discussed here are extracted from a batch of research of development wafers used to develop the baseline process for the fabrication of the arrays of detectors to be deployed with the SPT-3G receiver. Results from these research and development wafers have been incorporated into the fabrication process to get the baseline fabrication process presented here. SPT-3G is scheduled to deploy to the South Pole Telescope in late 2016.

Light-Emitting GaAs Nanowires on a Flexible Substrate.

PubMed

Valente, João; Godde, Tillmann; Zhang, Yunyan; Mowbray, David J; Liu, Huiyun

2018-06-18

Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core-shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phipps, Arran T.J.

Determining the composition of dark matter is at the forefront of modern scientific research. There is compelling evidence for the existence of vast quantities of dark matter throughout the universe, however it has so-far eluded all direct detection efforts and its identity remains a mystery. Weakly interacting massive particles (WIMPs) are a favored dark matter candidate and have been the primary focus of direct detection for several decades. The Cryogenic Dark Matter Search (CDMS) has developed the Z-dependent Ionization and Phonon (ZIP) detector to search for such particles. Typically made from germanium, these detectors are capable of distinguishing between electromagneticmore » background and a putative WIMP signal through the simultaneous measurement of ionization and phonons produced by scattering events. CDMS has operated several arrays of these detectors at the Soudan Underground Laboratory (Soudan, MN, USA) resulting in many competitive (often world-leading) WIMP exclusion limits. This dissertation focuses on ionization collection in these detectors under the sub-Kelvin, low electric field, and high crystal purity conditions unique to CDMS. The design and performance of a fully cryogenic HEMT-based amplifier capable of achieving the SuperCDMS SNOLAB ionization energy resolution goal of 100 eVee is presented. The experimental apparatus which has been used to record electron and hole properties under CDMS conditions is described. Measurements of charge transport, trapping, and impact ionization as a function of electric field in two CDMS detectors are shown, and the ionization collection efficiency is determined. The data is used to predict the error in the nuclear recoil energy scale under both CDMSlite and iZIP operating modes. A two species, two state model is developed to describe how ionization collection and space charge generation in CDMS detectors are controlled by the presence of “overcharged” D- donor and A+ acceptor impurity states. The thermal stability of these states is exclusive to sub-Kelvin operation, explaining why ionization collection in CDMS detectors differs from similar semiconductor detectors operating at higher temperature. This work represents a solid foundation for the understanding ionization collection in CDMS detectors.« less

New Opportunities in Decay Spectroscopy with the GRIFFIN and DESCANT Arrays

NASA Astrophysics Data System (ADS)

Bildstein, V.; Andreoiu, C.; Ball, G. C.; Ballast, T.; Bartlett, C.; Bender, P. C.; Bernier, N.; Bianco, L.; Bishop, D.; Brennan, D.; Bruhn, T.; Cheeseman, A.; Churchman, R.; Ciccone, S.; Davids, B.; Demand, G.; Dillmann, I.; Garnsworthy, A. B.; Garrett, P. E.; Georges, S.; Hackman, G.; Hadinia, B.; Kokke, R.; Krücken, R.; Linn, Y.; Lim, C.; Martin, J.-P.; Miller, D.; Mills, W. J.; Morrison, L. N.; Ohlmann, C. A.; Park, J.; Pearson, C. J.; Pore, J. L.; Rajabali, M. M.; Rand, E. T.; Rizwan, U.; Sarazin, F.; Shaw, B.; Starosta, K.; Svensson, C. E.; Sumithrarachchi, C.; Unsworth, C.; Voss, P.; Wang, Z. M.; Williams, J.; Wong, J.; Wong, S.

The GRIFFIN (Gamma-Ray Infrastructure For Fundamental Investigations of Nuclei) project is a major upgrade of the decay spectroscopy capabilities at TRIUMF-ISAC. GRIFFIN will replace the 8π spectrometer with an array of up to 16 large-volume HPGe clover detectors and use a state-of-the-art digital data acquisition system. The existing ancillary detector systems that had been developed for 8π, such as the SCEPTAR array for β-tagging, PACES for high-resolution internal conversion electron spectroscopy, and the DANTE array of LaBr3/BaF2 scintillators for fast γ-ray timing, will be used with GRIFFIN. GRIFFIN can also accommodate the new neutron detector array DESCANT (Deuterated Scintillator Array for Neutron Tagging), enabling the study of β-delayed neutron emitters. DESCANT consists of up to 70 detectors, each filled with approximately 2 liters of deuterated benzene, a liquid scintillator that provides pulse-shape discrimination (PSD) capabilities to distinguish between neutrons and γ-rays interacting with the detector. In addition, the anisotropic nature of n-d scattering as compared to the isotropic n-p scattering allows for the determination of the neutron energy spectrum directly from the pulse-height spectrum, complementing the time-of-flight (TOF) information. The installation of GRIFFIN is under way and first experiments are planned for the fall of 2014. The array will be completed in 2015 with the full complement of 16 clovers. DESCANT will be tested coupled with GRIFFIN in spring of 2015.

HgCdTe liquid phase epitaxy - An overview

NASA Astrophysics Data System (ADS)

Castro, C. A.; Korenstein, R.

1982-08-01

Techniques and results of using liquid phase epitaxy (LPE) to form crystalline thin HgCdTe films for industrial-scale applications in IR detectors and focal plane arrays are discussed. Varying the mole fraction of CdTe in HgCdTe is noted to permit control of the bandwidth. LPE-grown films are noted to have a low carrier concentration, on the order of 4 x 10 to the 14th to 5 x 10 to the 15th/cu cm, a good surface morphology and be amenable to production scale-up. Details of the isothermal, equilibrium cooling, and supersaturation cooling LPE growth modes are reviewed, noting the necessity of developing a reliable method for determining the liquidus temperature for all modes to maintain uniformity of film growth from batch to batch. Mechanical steps can be either dipping the substrate into the melt or the slider boat approach, which is used in the production of compound semiconductors.

Fluidic nanotubes and devices

DOEpatents

Yang, Peidong [Berkeley, CA; He, Rongrui [El Cerrito, CA; Goldberger, Joshua [Berkeley, CA; Fan, Rong [El Cerrito, CA; Wu, Yiying [Albany, CA; Li, Deyu [Albany, CA; Majumdar, Arun [Orinda, CA

2008-04-08

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Fluidic nanotubes and devices

DOEpatents

Yang, Peidong; He, Rongrui; Goldberger, Joshua; Fan, Rong; Wu, Yiying; Li, Deyu; Majumdar, Arun

2010-01-10

Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

A new detector concept for silicon photomultipliers

NASA Astrophysics Data System (ADS)

Sadigov, A.; Ahmadov, F.; Ahmadov, G.; Ariffin, A.; Khorev, S.; Sadygov, Z.; Suleymanov, S.; Zerrouk, F.; Madatov, R.

2016-07-01

A new design and principle of operation of silicon photomultipliers are presented. The new design comprises a semiconductor substrate and an array of independent micro-phototransistors formed on the substrate. Each micro-phototransistor comprises a photosensitive base operating in Geiger mode and an individual micro-emitter covering a small part of the base layer, thereby creating, together with this latter, a micro-transistor. Both micro-emitters and photosensitive base layers are connected with two respective independent metal grids via their individual micro-resistors. The total value of signal gain in the proposed silicon photomultiplier is a result of both the avalanche gain in the base layer and the corresponding gain in the micro-transistor. The main goals of the new design are: significantly lower both optical crosstalk and after-pulse effects at high signal amplification, improve speed of single photoelectron pulse formation, and significantly reduce the device capacitance.

Evaluation of detector array technology for the verification of advanced intensity-modulated radiotherapy

NASA Astrophysics Data System (ADS)

Hussien, Mohammad

Purpose: Quality assurance (QA) for intensity modulated radiotherapy (IMRT) has evolved substantially. In recent years, various ionization chamber or diode detector arrays have become commercially available, allowing pre-treatment absolute dose verification with near real-time results. This has led to a wide uptake of this technology to replace point dose and film dosimetry and to facilitate QA streamlining. However, arrays are limited by their spatial resolution giving rise to concerns about their response to clinically relevant deviations. The common factor in all commercial array systems is the reliance on the gamma index (γ) method to provide the quantitative evaluation of the measured dose distribution against the Treatment Planning System (TPS) calculated dose distribution. The mathematical definition of the gamma index presents computational challenges that can cause a variation in the calculation in different systems. The purpose of this thesis was to evaluate the suitability of detector array systems, combined with their implementation of the gamma index, in the verification and dosimetry audit of advanced IMRT. Method: The response of various commercial detector array systems (Delta4®, ArcCHECK®, and the PTW 2D-Array seven29™ and OCTAVIUS II™ phantom combination, Gafchromic® EBT2 and composite EPID measurements) to simulated deliberate changes in clinical IMRT and VMAT plans was evaluated. The variability of the gamma index calculation in the different systems was also evaluated by comparing against a bespoke Matlab-based gamma index analysis software. A novel methodology for using a commercial detector array in a dosimetry audit of rotational radiotherapy was then developed. Comparison was made between measurements using the detector array and those performed using ionization chambers, alanine and radiochromic film. The methodology was developed as part of the development of a national audit of rotational radiotherapy. Ten cancer centres were asked to create a rotational radiotherapy treatment plan for a three-dimensional treatment-planning-system (3DTPS) test and audited. Phantom measurements using a commercial 2D ionization chamber (IC) array were compared with measurements using 0.125cm3 ion chamber, Gafchromic film and alanine pellets in the same plane. Relative and absolute gamma index (γ) comparisons were made for Gafchromic film and 2D-Array planes respectively. A methodology for prospectively deriving appropriate gamma index acceptance criteria for detector array systems, via simulation of deliberate changes and receiver operator characteristic (ROC) analysis, has been developed. Results: In the event of clinically relevant delivery introduced changes, the detector array systems evaluated are able to detect some of these changes if suitable gamma index passing criteria, such as 2%/2mm, are used. Different computational approaches can produce variability in the calculation of the gamma index between different software implementations. For the same passing criteria, different devices and software combinations exhibit varying levels of agreement with the Matlab predicted gamma index analysis. This work has found that it is suitable to use a detector array in a dosimetry audit of rotational radiotherapy in place of standard systems of dosimetry such as ion chambers, alanine and film. Comparisons between individual detectors within the 2D-Array against the corresponding ion chamber and alanine measurement showed a statistically significant concordance correlation coefficient (ρc>0.998, p<0.001) with mean difference of -1.1%±1.1% and -0.8%±1.1%, respectively, in a high dose PTV. In the γ comparison between the 2D-Array and film it was found that the 2D-Array was more likely to fail in planes where there was a dose discrepancy due to the absolute analysis performed. A follow-up analysis of the library of measured data during the audit found that additional metrics such as the mean gamma index or dose differences over regions of interest can be gleaned from the measured dose distributions. Conclusions: It is important to understand the response and limitations of the gamma index analysis combined with the equipment and software in use. For the same pass-rate criteria, different devices and software combinations exhibit varying levels of agreement with the predicted γ analysis. It has been found that using a commercial detector array for a dosimetry audit of rotational radiotherapy is suitable in place of standard systems of dosimetry. A methodology for being able to prospectively ascertain appropriate gamma index acceptance criteria for the detector array system in use, via simulation of deliberate changes and ROC analysis, has been developed. It has been shown that setting appropriate tolerances can be achieved and should be performed as the methodology takes into account the configuration of the commercial system as well as the software implementation of the gamma index.

A photon-counting photodiode array detector for far ultraviolet (FUV) astronomy

NASA Technical Reports Server (NTRS)

Hartig, G. F.; Moos, H. W.; Pembroke, R.; Bowers, C.

1982-01-01

A compact, stable, single-stage intensified photodiode array detector designed for photon-counting, far ultraviolet astronomy applications employs a saturable, 'C'-type MCP (Galileo S. MCP 25-25) to produce high gain pulses with a narrowly peaked pulse height distribution. The P-20 output phosphor exhibits a very short decay time, due to the high current density of the electron pulses. This intensifier is being coupled to a self-scanning linear photodiode array which has a fiber optic input window which allows direct, rigid mechanical coupling with minimal light loss. The array was scanned at a 250 KHz pixel rate. The detector exhibits more than adequate signal-to-noise ratio for pulse counting and event location.

Corrections for the geometric distortion of the tube detectors on SANS instruments at ORNL

DOE PAGES

He, Lilin; Do, Changwoo; Qian, Shuo; ...

2014-11-25

Small-angle neutron scattering instruments at the Oak Ridge National Laboratory's High Flux Isotope Reactor were upgraded in area detectors from the large, single volume crossed-wire detectors originally installed to staggered arrays of linear position-sensitive detectors (LPSDs). The specific geometry of the LPSD array requires that approaches to data reduction traditionally employed be modified. Here, two methods for correcting the geometric distortion produced by the LPSD array are presented and compared. The first method applies a correction derived from a detector sensitivity measurement performed using the same configuration as the samples are measured. In the second method, a solid angle correctionmore » is derived that can be applied to data collected in any instrument configuration during the data reduction process in conjunction with a detector sensitivity measurement collected at a sufficiently long camera length where the geometric distortions are negligible. Furthermore, both methods produce consistent results and yield a maximum deviation of corrected data from isotropic scattering samples of less than 5% for scattering angles up to a maximum of 35°. The results are broadly applicable to any SANS instrument employing LPSD array detectors, which will be increasingly common as instruments having higher incident flux are constructed at various neutron scattering facilities around the world.« less

Pulse-height loss in the signal readout circuit of compound semiconductor detectors

NASA Astrophysics Data System (ADS)

Nakhostin, M.; Hitomi, K.

2018-06-01

Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

In-Vivo Real-Time X-ray μ-Imaging

NASA Astrophysics Data System (ADS)

Dammer, Jiri; Holy, Tomas; Jakubek, Jan; Jakubek, Martin; Pospisil, Stanislav; Vavrík, Daniel

2007-11-01

The technique of X-ray transmission imaging is available for more than 100 years and it is still one of the fastest and easiest ways how to study the internal structure of living biological samples. The advances in semiconductor technology in last years make possible to fabricate new types of X-ray detectors with direct conversion of interacting X-ray photon to an electric signal. Especially semiconductor pixel detectors seem to be very promising. Compared to the film technique they bring single-quantum and real-time digital information about the studied object with high resolution, high sensitivity and broad dynamic range. These pixel detector-based imaging stand promising as a new tool in the field of small animal imaging, for cancer research and for observation of dynamic processes inside organisms. These detectors open up for instance new possibilities for researchers to perform non-invasive studies of tissue for mutations or pathologies and to monitor disease progression or response to therapy.

Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, S. V.; Liu, J. K.; Hill, C. J.; Rafol, S. B.; Mumolo, J. M.; Shott, C. A.

2006-01-01

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

Semiconductor millimeter wavelength electronics

NASA Astrophysics Data System (ADS)

Rosenbaum, F. J.

1985-12-01

This final report summarizes the results of research carried out on topics in millimeter wavelength semiconductor electronics under an ONR Selected Research Opportunity program. Study areas included III-V compound semiconductor growth and characterization, microwave and millimeter wave device modeling, fabrication and testing, and the development of new device concepts. A new millimeter wave mixer and detector, the Gap diode was invented. Topics reported on include ballistic transport, Zener oscillations, impurities in GaAs, electron velocity-electric field calculation and measurements, etc., calculations.

Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

DTIC Science & Technology

1982-05-01

semiconductor Schottky-barrier contacts are used in many semiconductor devices, including switches, rectifiers, varactors , IMPATTs, mixer and detector...ionic materials such as most of the II-VI compound semiconductors (e.g. ZnS and ZnO) and the transition-metal oxides , the barrier height is strongly...the alloying process described above is nonuniformity, due to the incomplete removal of residual surface oxides prior to the evaporation of the metal

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

NASA Astrophysics Data System (ADS)

Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

2018-04-01

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or γ rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (μe τe) of a 500 μ m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The μe τe products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average μe τe of 1.0 ṡ 10‑4 cm2V‑1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

Real-time continuous-wave terahertz line scanner based on a compact 1 × 240 InGaAs Schottky barrier diode array detector.

PubMed

Han, Sang-Pil; Ko, Hyunsung; Kim, Namje; Lee, Won-Hui; Moon, Kiwon; Lee, Il-Min; Lee, Eui Su; Lee, Dong Hun; Lee, Wangjoo; Han, Seong-Tae; Choi, Sung-Wook; Park, Kyung Hyun

2014-11-17

We demonstrate real-time continuous-wave terahertz (THz) line-scanned imaging based on a 1 × 240 InGaAs Schottky barrier diode (SBD) array detector with a scan velocity of 25 cm/s, a scan line length of 12 cm, and a pixel size of 0.5 × 0.5 mm². Foreign substances, such as a paper clip with a spatial resolution of approximately 1 mm that is hidden under a cracker, are clearly detected by this THz line-scanning system. The system consists of the SBD array detector, a 200-GHz gyrotron source, a conveyor system, and several optical components such as a high-density polyethylene cylindrical lens, metal cylindrical mirror, and THz wire-grid polarizer. Using the THz polarizer, the signal-to-noise ratio of the SBD array detector improves because the quality of the source beam is enhanced.

Position, Orientation and Velocity Detection of Unmanned Underwater Vehicles (UUVs) Using an Optical Detector Array

PubMed Central

Pe’eri, Shachak; Thein, May-Win; Rzhanov, Yuri; Celikkol, Barbaros; Swift, M. Robinson

2017-01-01

This paper presents a proof-of-concept optical detector array sensor system to be used in Unmanned Underwater Vehicle (UUV) navigation. The performance of the developed optical detector array was evaluated for its capability to estimate the position, orientation and forward velocity of UUVs with respect to a light source fixed in underwater. The evaluations were conducted through Monte Carlo simulations and empirical tests under a variety of motion configurations. Monte Carlo simulations also evaluated the system total propagated uncertainty (TPU) by taking into account variations in the water column turbidity, temperature and hardware noise that may degrade the system performance. Empirical tests were conducted to estimate UUV position and velocity during its navigation to a light beacon. Monte Carlo simulation and empirical results support the use of the detector array system for optics based position feedback for UUV positioning applications. PMID:28758936

Temperature distribution model for the semiconductor dew point detector

NASA Astrophysics Data System (ADS)

Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

2001-08-01

The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

Germanium blocked impurity band far infrared detectors

NASA Astrophysics Data System (ADS)

Rossington, Carolyn Sally

1988-04-01

The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the Star Wars nuclear defense scheme proposed by the Reagan administration.

Quantitative Secondary Electron Detector (QSED)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nayak, Subu; Joy, David C.

2013-12-31

Research is proposed to investigate the feasibility of applying recent advances in semiconductor technology to fabricate direct digital Quantitative Secondary Electron Detectors (QSED) for scanning electron microscopes (SEMs). If successful, commercial versions of the QSED would transform the SEM into a quantitative, metrological system with enhanced capabilities that, in turn, would broaden research horizons across industries. This project will be conducted in collaboration with Dr. David C Joy at the University of Tennessee, who has demonstrated limited (to the 1keV range) digital collection of the energy from backscattered signals in a SEM using a modified silicon drift detector. Several detectormore » configurations will be fabricated and tested for sensitivities, background noise reduction, DC offset elimination, and metrological capabilities (linearity, accuracy, etc.) against a set of commercially important performance criteria to ascertain concept feasibility. Once feasibility is proven, the solid state digital device array and its switching frequency will be scaled-up, in Phase II, to improve temporal resolution. If successful, this work will produce a crucial advancement in electron microscopy with wide-ranging applications. The following are key advantages anticipated from direct digital QSED: 1. High signal-to-noise ratio will improve SEM resolution in nano-scale, which is critical for dimensional metrology in any application. 2. Quantitative measurement will enhance process control and design validation in semiconductors, photo-voltaics, bio-medical devices and catalysts; and will improve accuracy in predicting the reliability and the lifecycle of materials across industries. 3. Video and dynamic-imaging capabilities will advance study in nano-scale phenomena in a variety of industries, including pharmaceutical and semiconductor materials. 4. Lower cost will make high-performing electron microscopes affordable to more researchers. 5. Compact size and ease of integration with imaging software will enable customers to retrofit and upgrade existing SEM equipment. ScienceTomorrow’s direct digital QSED concept has generated enthusiastic interest among a number of microscope makers, service companies, and microscope users. The company has offers of support from several companies. The roles these companies would play in supporting the project are described in the proposal. The proposed QSED advance sits squarely in the middle of ScienceTomorrow’s mission to provide next-generation technology solutions to today’s critical problems and, if successful, will further the company’s business strategy by launching an advanced, high-margin product that will enable the company and its partners to create at least 17 net-new jobs by the end of 2018.« less

Radiography by selective detection of scatter field velocity components

NASA Technical Reports Server (NTRS)

Dugan, Edward T. (Inventor); Jacobs, Alan M. (Inventor); Shedlock, Daniel (Inventor)

2007-01-01

A reconfigurable collimated radiation detector, system and related method includes at least one collimated radiation detector. The detector has an adjustable collimator assembly including at least one feature, such as a fin, optically coupled thereto. Adjustments to the adjustable collimator selects particular directions of travel of scattered radiation emitted from an irradiated object which reach the detector. The collimated detector is preferably a collimated detector array, where the collimators are independently adjustable. The independent motion capability provides the capability to focus the image by selection of the desired scatter field components. When an array of reconfigurable collimated detectors is provided, separate image data can be obtained from each of the detectors and the respective images cross-correlated and combined to form an enhanced image.