Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

PubMed

Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

2011-06-10

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

You can't measure what you can't see - detectors for microscopies

NASA Astrophysics Data System (ADS)

Denes, Peter

For centuries, the human eye has been the imaging detector of choice thanks to its high sensitivity, wide dynamic range, and direct connection to a built-in data recording and analysis system. The eye, however, is limited to visible light, which excludes microscopies with electrons and X-rays, and the built-in recording system stores archival information at very low rates. The former limitation has been overcome by ``indirect'' detectors, which convert probe particles to visible light, and the latter by a variety of recording techniques, from photographic film to semiconductor-based imagers. Semiconductor imagers have been used for decades as ``direct'' detectors in particle physics, and almost as long for hard X-rays. For soft X-ray microscopy, the challenge has been the small signal levels - plus getting the X-rays into the detector itself, given how quickly they are absorbed in inert layers. For electron microscopy, the challenge has been reconciling detector spatial resolution and pixel count with the large multiple scattering of electrons with energies used for microscopy. Further, a high recording rate (``movies'' rather than ``snapshots'') enables time-resolved studies, time-dependent corrections, shot-by-shot experiments and scanning techniques - at the expense of creating large data volumes. This talk will discuss solutions to these challenges, as well as an outlook towards future developments.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time as measured with different instruments or with the same instrument at different frequencies; association of infrared response spectra of poor quality germanium gamma ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways; and confirmation of the excellent quality and cosmetic appearance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon, development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Investigation to optimize the energy resolution and efficiency of cadmium(zinc)telluride for photon measurements

NASA Astrophysics Data System (ADS)

Kim, Hadong

While the investigations of the Cd(Zn)Te characteristics were completed, a new method to make arbitrary anode shapes, without the troublesome shadow mask technique, was found. With this technique, the two-anode geometry Cd(Zn)Te detector was introduced and tested. The semiconductor performance of the two-anode geometry detectors for the incoming gamma rays of 241Am, 57Co, and 137Cs were compared to the responses of the planar device. The very promising photon energy resolutions of 9.3 and 5.4% FWHM were obtained with the two-anode geometry detector for the gamma rays energies of 122 keV and 662 keV, respectively, while no discernible full energy peaks were apparent with the planar detector. Several simulation programs that are very easy to handle were developed as useful tools for investigating the complicated gamma ray pulse height distributions, which were due to the energy deposition events inside the semiconductors. Comparisons to the known values and with the results from other application programs, validated the information obtained from the simulation programs, which were developed during this research effort. A graphical user interface (GUI) was designed for the user's convenience in order to enter the required input parameters for the specific requirements of each simulation programs. The idealized noise free spectra for the planar detector and for the small pixel geometry detector were successfully obtained by applying Monte Carlo techniques.

Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays

NASA Astrophysics Data System (ADS)

Haston, Kyle; Barber, H. Bradford; Furenlid, Lars R.; Salçin, Esen; Bora, Vaibhav

2011-10-01

Pixellated semiconductor detectors, such as CdZnTe, CdTe, or TlBr, are used for gamma-ray imaging in medicine and astronomy. Data analysis for these detectors typically estimates the position (x, y, z) and energy (E) of each interacting gamma ray from a set of detector signals {Si} corresponding to completed charge transport on the hit pixel and any of its neighbors that take part in charge sharing, plus the cathode. However, it is clear from an analysis of signal induction, that there are transient signal on all pixel electrodes during the charge transport and, when there is charge trapping, small negative residual signals on all electrodes. If we wish to optimally obtain the event parameters, we should take all these signals into account. We wish to estimate x,y,z and E from the set of all electrode signals, {Si(t)}, including time dependence, using maximum-likelihood techniques[1]. To do this, we need to determine the probability of the electrode signals, given the event parameters {x, y, z, E}, i.e. Pr( {Si(t)} | {x, y, z, E} ). Thus we need to map the detector response of all pixels, {Si(t)}, for a large number of events with known x,y,z and E.In this paper we demonstrate the existence of the transient signals and residual signals and determine their magnitudes. They are typically 50-100 times smaller than the hit-pixel signals. We then describe development of an apparatus to measure the response of a 16-pixel semiconductor detector and show some preliminary results. We also discuss techniques for measuring the event parameters for individual gamma-ray interactions, a requirement for determining Pr( {Si(t)} | {x, y, z, E}).

Progress in the Development of CdZnTe Unipolar Detectors for Different Anode Geometries and Data Corrections

PubMed Central

Zhang, Qiushi; Zhang, Congzhe; Lu, Yanye; Yang, Kun; Ren, Qiushi

2013-01-01

CdZnTe detectors have been under development for the past two decades, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution. However, the performance of this type of detector is limited primarily by incomplete charge collection problems resulting from charge carriers trapping. This paper is a review of the progress in the development of CdZnTe unipolar detectors with some data correction techniques for improving performance of the detectors. We will first briefly review the relevant theories. Thereafter, two aspects of the techniques for overcoming the hole trapping issue are summarized, including irradiation direction configuration and pulse shape correction methods. CdZnTe detectors of different geometries are discussed in detail, covering the principal of the electrode geometry design, the design and performance characteristics, some detector prototypes development and special correction techniques to improve the energy resolution. Finally, the state of art development of 3-D position sensing and Compton imaging technique are also discussed. Spectroscopic performance of CdZnTe semiconductor detector will be greatly improved even to approach the statistical limit on energy resolution with the combination of some of these techniques. PMID:23429509

Electron gas grid semiconductor radiation detectors

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Metal-oxide-metal point contact junction detectors. [detection mechanism and mechanical stability

NASA Technical Reports Server (NTRS)

Baird, J.; Havemann, R. H.; Fults, R. D.

1973-01-01

The detection mechanism(s) and design of a mechanically stable metal-oxide-metal point contact junction detector are considered. A prototype for a mechanically stable device has been constructed and tested. A technique has been developed which accurately predicts microwave video detector and heterodyne mixer SIM (semiconductor-insulator-metal) diode performance from low dc frequency volt-ampere curves. The difference in contact potential between the two metals and geometrically induced rectification constitute the detection mechanisms.

Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

DOEpatents

Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

2012-09-04

In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

Direct Electric Field Visualization in Semiconductor Planar Structures

DTIC Science & Technology

2006-12-01

electrical signal . The spectral response is determined by the detector characteristics and the operating temperature. The sensitivity of the material used ...to the Office of Management and Budget, Paperwork Reduction Project (0704-0188) Washington DC 20503. 1. AGENCY USE ONLY (Leave blank) 2. REPORT...words) A new technique for imaging the 2D transport of free charge in semiconductor structures is used to directly map electric field distributions

Hybrid anode for semiconductor radiation detectors

DOEpatents

Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

2013-11-19

The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Stable room-temperature thallium bromide semiconductor radiation detectors

NASA Astrophysics Data System (ADS)

Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

2017-10-01

Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Pulse-height loss in the signal readout circuit of compound semiconductor detectors

NASA Astrophysics Data System (ADS)

Nakhostin, M.; Hitomi, K.

2018-06-01

Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

NASA Astrophysics Data System (ADS)

Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

2016-01-01

State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

Direct conversion semiconductor detectors in positron emission tomography

NASA Astrophysics Data System (ADS)

Cates, Joshua W.; Gu, Yi; Levin, Craig S.

2015-05-01

Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

II-VI Narrow-Bandgap Semiconductors for Optoelectronics

NASA Astrophysics Data System (ADS)

Baker, Ian

The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

Gamma ray detector modules

NASA Technical Reports Server (NTRS)

Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

2009-01-01

A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

Field-Induced-Gap Infrared Detectors

NASA Technical Reports Server (NTRS)

Elliott, C. Thomas

1990-01-01

Semimetals become semiconductors under applied magnetic fields. New detectors require less cooling equipment because they operate at temperatures higher than liquid-helium temperatures required by extrinsic-semiconductor detectors. Magnetic fields for detectors provided by electromagnets based on recently-discovered high-transition-temperature superconducting materials. Detector material has to be semiconductor, in which photon absorbed by exciting electron/hole pair across gap Eg of forbidden energies between valence and conduction energy bands. Magnetic- and compositional-tuning effects combined to obtain two-absorber detector having narrow passband. By variation of applied magnetic field, passband swept through spectrum of interest.

A survey and analysis of experimental hydrogen sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

1992-01-01

In order to ascertain the applicability of hydrogen sensors to aerospace applications, a survey was conducted of promising experimental point-contact hydrogen sensors and their operation was analyzed. The techniques discussed are metal-oxide-semiconductor or MOS based sensors, catalytic resistor sensors, acoustic wave detectors, and pyroelectric detectors. All of these sensors depend on the interaction of hydrogen with Pd or a Pd-alloy. It is concluded that no single technique will meet the needs of aerospace applications but a combination of approaches is necessary. The most promising combination is an MOS based sensor with a catalytic resistor.

Photon detector configured to employ the Gunn effect and method of use

DOEpatents

Cich, Michael J

2015-03-17

Embodiments disclosed herein relate to photon detectors configured to employ the Gunn effect for detecting high-energy photons (e.g., x-rays and gamma rays) and methods of use. In an embodiment, a photon detector for detecting high-energy photons is disclosed. The photon detector includes a p-i-n semiconductor diode having a p-type semiconductor region, an n-type semiconductor region, and a compensated i-region disposed between the p-type semiconductor region and the n-type semiconductor region. The compensated i-region and has a width of about 100 .mu.m to about 400 .mu.m and is configured to exhibit the Gunn effect when the p-i-n semiconductor diode is forward biased a sufficient amount. The compensated i-region is doped to include a free carrier concentration of less than about 10.sup.10 cm.sup.-3.

Editorial

NASA Astrophysics Data System (ADS)

Bruzzi, Mara; Cartiglia, Nicolo; Pace, Emanuele; Talamonti, Cinzia

2015-10-01

The 10th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD) was held in Florence, at Dipartimento di Fisica ed Astronomia on October 8-10, 2014. It has been aimed at discussing frontier research activities in several application fields as nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference concern performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), ultra-fast silicon detectors design and manufacturing, high-band gap semiconductor detectors, novel semiconductor-based devices for medical applications, radiation damage issues in semiconductors and related radiation-hardening technologies.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

PubMed

Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

2006-01-01

Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

Entangled γ-photons—classical laboratory exercise with modern detectors

NASA Astrophysics Data System (ADS)

Hetfleiš, Jakub; Lněnička, Jindřich; Šlégr, Jan

2018-03-01

This paper describes the application of modern semiconductor detectors of γ and β radiation, which can be used in undergraduate laboratory experiments and lecture demonstrations as a replacement for Geiger-Müller (GM) tubes. Unlike GM tubes, semiconductor detectors do not require a high voltage power source or shaping circuits. The principle of operation of semiconductor detectors is discussed briefly, and classical experiments from nuclear physics are described, ranging from the measurements of linear and mass attenuation coefficient to a demonstration of entangled γ-photons.

Ultrafast all-optical imaging technique using low-temperature grown GaAs/AlxGa1 - xAs multiple-quantum-well semiconductor

NASA Astrophysics Data System (ADS)

Gao, Guilong; Tian, Jinshou; Wang, Tao; He, Kai; Zhang, Chunmin; Zhang, Jun; Chen, Shaorong; Jia, Hui; Yuan, Fenfang; Liang, Lingliang; Yan, Xin; Li, Shaohui; Wang, Chao; Yin, Fei

2017-11-01

We report and experimentally demonstrate an ultrafast all-optical imaging technique capable of single-shot ultrafast recording with a picosecond-scale temporal resolution and a micron-order two-dimensional spatial resolution. A GaAs/AlxGa1 - xAs multiple-quantum-well (MQW) semiconductor with a picosecond response time, grown using molecular beam epitaxy (MBE) at a low temperature (LT), is used for the first time in ultrafast imaging technology. The semiconductor transforms the signal beam information to the probe beam, the birefringent delay crystal time-serializes the input probe beam, and the beam displacer maps different polarization probe beams onto different detector locations, resulting in two frames with an approximately 9 ps temporal separation and approximately 25 lp/mm spatial resolution in the visible range.

Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging

PubMed Central

Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

2017-01-01

The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method. PMID:28553175

Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

NASA Astrophysics Data System (ADS)

Samedov, Victor V.

2018-01-01

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

Non-streaming high-efficiency perforated semiconductor neutron detectors, methods of making same and measuring wand and detector modules utilizing same

DOEpatents

McGregor, Douglas S.; Shultis, John K.; Rice, Blake B.; McNeil, Walter J.; Solomon, Clell J.; Patterson, Eric L.; Bellinger, Steven L.

2010-12-21

Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

Characterization of Stress in Thallium Bromide Devices

NASA Astrophysics Data System (ADS)

Datta, Amlan; Motakef, Shariar

2015-04-01

Thallium bromide (TlBr) is a wide bandgap, compound semiconductor with high gamma-ray stopping power and promising physical properties. Several surface modification techniques have been demonstrated to increase the lifetime of TlBr devices at room temperature. However, absence of reproducibility in the performance of TlBr detectors (even with low ionic conduction at -20°C) suggests presence of unexplored bulk phenomena. Stress in the TlBr crystal due to various intrinsic (e.g. grain boundaries and dislocations networks) in conjunction with external factors such as thermal, mechanical, and electrical loadings explains detector-to-detector variations. Photoelasticity and opto-electrical techniques were applied to visualize and qualitatively correlate the device performance with stress. Changes in stress patterns with variations in ambient temperature were clearly demonstrated. Electric field fluctuations in TlBr detectors with time were for the first time observed using the Pockels effect.

Surface Conduction in III-V Semiconductor Infrared Detector Materials

NASA Astrophysics Data System (ADS)

Sidor, Daniel Evan

III-V semiconductors are increasingly used to produce high performance infrared photodetectors; however a significant challenge inherent to working with these materials is presented by unintended electrical conduction pathways that form along their surfaces. Resulting leakage currents contribute to system noise and are ineffectively mitigated by device cooling, and therefore limit ultimate performance. When the mechanism of surface conduction is understood, the unipolar barrier device architecture offers a potential solution. III-V bulk unipolar barrier detectors that effectively suppress surface leakage have approached the performance of the best II-VI pn-based structures. This thesis begins with a review of empirically determined Schottky barrier heights and uses this information to present a simple model of semiconductor surface conductivity. The model is validated through measurements of degenerate n-type surface conductivity on InAs pn junctions, and non-degenerate surface conductivity on GaSb pn junctions. It is then extended, along with design principles inspired by the InAs-based nBn detector, to create a flat-band pn-based unipolar barrier detector possessing a conductive surface but free of detrimental surface leakage current. Consideration is then given to the relative success of these and related bulk detectors in suppressing surface leakage when compared to analogous superlattice-based designs, and general limitations of unipolar barriers in suppressing surface leakage are proposed. Finally, refinements to the molecular beam epitaxy crystal growth techniques used to produce InAs-based unipolar barrier heterostructure devices are discussed. Improvements leading to III-V device performance well within an order of magnitude of the state-of-the-art are demonstrated.

III-V semiconductor solid solution single crystal growth

NASA Technical Reports Server (NTRS)

Gertner, E. R.

1982-01-01

The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

Carrier-envelope-offset phase control of ultrafast optical rectification in resonantly excited semiconductors.

PubMed

Van Vlack, C; Hughes, S

2007-04-20

Ultrashort pulse light-matter interactions in a semiconductor are investigated within the regime of resonant optical rectification. Using pulse envelope areas of around 1.5-3.5 pi, a single-shot dependence on carrier-envelope-offset phase (CEP) is demonstrated for 5 fs pulse durations. A characteristic phase map is predicted for several different frequency regimes using parameters for thin-film GaAs. We subsequently suggest a possible technique to extract the CEP, in both sign and amplitude, using a solid state detector.

Method for producing a hybridization of detector array and integrated circuit for readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

1993-01-01

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

Study on Effects of Gamma-Ray Irradiation on TlBr Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Matsumura, Motohiro; Watanabe, Kenichi; Yamazaki, Atsushi; Uritani, Akira; Kimura, Norihisa; Nagano, Nobumichi; Hitomi, Keitaro

Radiation hardness of thallium bromide (TlBr) semiconductor detectors to 60Co gamma-ray irradiation was evaluated. The energy spectra and μτ products of electrons were measured to evaluate the irradiation effects. No significant degradation of spectroscopic performance of the TlBr detector for 137Cs gamma-rays was observed up to 45 kGy irradiation. Although the μτ products of electrons in the TlBr detector slightly decreased, position of the photo-peak was stable without significant degradation after the gamma-ray irradiation. We confirmed that the TlBr semiconductor detector has a high tolerance for gamma-ray irradiation at least up to 45 kGy.

Methods of measurement for semiconductor materials, process control, and devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1972-01-01

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

NASA Astrophysics Data System (ADS)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-05-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doan, T. C.; Li, J.; Lin, J. Y.

2016-07-15

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick {sup 10}B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors basedmore » on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.« less

Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples

DTIC Science & Technology

2015-11-13

P Wijewarnasuriya at the Army Research Lab to understand the bandd offsets of HgCdTe infrared detector structures. Especially when a sample is not...Final Report: Equipment for Topographical Preparation and Analysis of Various Semiconductor Infrared Detector Samples Report Title A used calibrated...structures i. G15-38 and G15-38 Quantum Dot ---------------------------- 16 Infrared Detector Samples ii. GSU13-MPD-GB1 Heterostructure

Photocapacitive MIS infrared detectors

NASA Technical Reports Server (NTRS)

Sher, A.; Lu, S. S.-M.; Moriarty, J. A.; Crouch, R. K.; Miller, W. E.

1978-01-01

A new class of room-temperature infrared detectors has been developed through use of metal-insulator-semiconductor (MIS) or metal-insulator-semiconductor-insulator-metal (MISIM) slabs. The detectors, which have been fabricated from Si, Ge and GaAs, rely for operation on the electrical capacitance variations induced by modulated incident radiation. The peak detectivity for a 1000-A Si MISIM detector is comparable to that of a conventional Si detector functioning in the photovoltaic mode. Optimization of the photocapacitive-mode detection sensitivity is discussed.

International Conference on Infrared and Millimeter Waves, 13th, Honolulu, HI, Dec. 5-9, 1988, Conference Digest

NASA Astrophysics Data System (ADS)

Temkin, Richard J.

Recent advances in IR and mm-wave (MMW) physics, astrophysics, devices, and applications are examined in reviews and reports. Sections are devoted to MMW sources, MMW modulation of light, MMW antennas, FELs, MMW optical technology, astronomy, MMW systems, microwave-optical interactions, MMW waveguides, MMW detectors and mixers, plasma diagnostics, and atmospheric physics. Also considered are gyrotrons, guided propagation, high-Tc superconductors, sub-MMW detectors and related devices, ICs, near-MMW measurements and techniques, lasers, material characterization, semiconductors, and atmospheric propagation.

International Conference on Infrared and Millimeter Waves, 15th, Orlando, FL, Dec. 10-14, 1990, Conference Digest

NASA Astrophysics Data System (ADS)

Temkin, Richard J.

Recent advances in IR and mm-wave (MMW) technology and applications are discussed in reviews and reports. Sections are devoted to MMW sources, high-Tc superconductors, atmospheric physics, FEL technology, astronomical instrumentation, MMW systems, measurement techniques, MMW guides, and MMW detectors and mixers. Also discussed are material properties, gyrotrons, guided propagation, semiconductors, submm detectors and devices, material characterization methods, ICs, MMW guides and plasma diagnostics, lasers, and MMW antennas. Diagrams, drawings, graphs, photographs, and tables of numerical data are provided.

New Technology CZT Detectors for High-Energy Flare Spectroscopy: The Room Temperature Semiconductor Spectrometer for JAWSAT

NASA Technical Reports Server (NTRS)

Vestrand, W. Thomas

1999-01-01

The goal of our Room Temperature Semiconductor Spectrometer (RTeSS) project is to develop a small high-energy solar flare spectrometer employing semiconductor detectors that do not require significant cooling when used as high-energy solar flare spectrometers. Specifically, the goal is to test Cadmium Zinc Telluride (CZT) detectors with coplanar grid electrodes as x-ray and gamma-ray spectrometers and to design an experiment that can be flown as a "piggy-back" payload on a satellite mission during the next solar maximum.

X-ray chemical analyzer for field applications

DOEpatents

Gamba, Otto O. M.

1977-01-01

A self-supporting portable field multichannel X-ray chemical analyzer system comprising a lightweight, flexibly connected, remotely locatable, radioisotope-excited sensing probe utilizing a cryogenically-cooled solid state semi-conductor crystal detector for fast in situ non-destructive, qualitative and quantitative analysis of elements in solid, powder, liquid or slurried form, utilizing an X-ray energy dispersive spectrometry technique.

Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction.

PubMed

Jeon, Youngeun; Jung, Sungchul; Jin, Hanbyul; Mo, Kyuhyung; Kim, Kyung Rok; Park, Wook-Ki; Han, Seong-Tae; Park, Kibog

2017-12-04

Terahertz (THz) detectors have been extensively studied for various applications such as security, wireless communication, and medical imaging. In case of metal-insulator-metal (MIM) tunnel junction THz detector, a small junction area is desirable because the detector response time can be shortened by reducing it. An edge metal-semiconductor-metal (EMSM) junction has been developed with a small junction area controlled precisely by the thicknesses of metal and semiconductor films. The voltage response of the EMSM THz detector shows the clear dependence on the polarization angle of incident THz wave and the responsivity is found to be very high (~2,169 V/W) at 0.4 THz without any antenna and signal amplifier. The EMSM junction structure can be a new and efficient way of fabricating the nonlinear device THz detector with high cut-off frequency relying on extremely small junction area.

Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications

DTIC Science & Technology

1992-06-22

Mechanism of light -induced reactivation of acceptors in p-type hydrogenated gallium arsenide. I. Szafranek, M. Szafranek, and G.E. Stillman. Phys. Rev.B...observed in these data. The heterojunc- techniques employed were first developed in tion is illuminated through the InP substrate with the light of GaAs-Al... light . The photocurrent was detected using conventional chopper and lock-in amplifier ’ 1h s techniques. A pyroelectric detector was used as a reference

Testing methods and techniques: Testing electrical and electronic devices: A compilation

NASA Technical Reports Server (NTRS)

1972-01-01

The methods, techniques, and devices used in testing various electrical and electronic apparatus are presented. The items described range from semiconductor package leak detectors to automatic circuit analyzer and antenna simulators for system checkout. In many cases the approaches can result in considerable cost savings and improved quality control. The testing of various electronic components, assemblies, and systems; the testing of various electrical devices; and the testing of cables and connectors are explained.

Study of a new design of p-N semiconductor detector array for nuclear medicine imaging by monte carlo simulation codes.

PubMed

Hajizadeh-Safar, M; Ghorbani, M; Khoshkharam, S; Ashrafi, Z

2014-07-01

Gamma camera is an important apparatus in nuclear medicine imaging. Its detection part is consists of a scintillation detector with a heavy collimator. Substitution of semiconductor detectors instead of scintillator in these cameras has been effectively studied. In this study, it is aimed to introduce a new design of P-N semiconductor detector array for nuclear medicine imaging. A P-N semiconductor detector composed of N-SnO2 :F, and P-NiO:Li, has been introduced through simulating with MCNPX monte carlo codes. Its sensitivity with different factors such as thickness, dimension, and direction of emission photons were investigated. It is then used to configure a new design of an array in one-dimension and study its spatial resolution for nuclear medicine imaging. One-dimension array with 39 detectors was simulated to measure a predefined linear distribution of Tc(99_m) activity and its spatial resolution. The activity distribution was calculated from detector responses through mathematical linear optimization using LINPROG code on MATLAB software. Three different configurations of one-dimension detector array, horizontal, vertical one sided, and vertical double-sided were simulated. In all of these configurations, the energy windows of the photopeak were ± 1%. The results show that the detector response increases with an increase of dimension and thickness of the detector with the highest sensitivity for emission photons 15-30° above the surface. Horizontal configuration array of detectors is not suitable for imaging of line activity sources. The measured activity distribution with vertical configuration array, double-side detectors, has no similarity with emission sources and hence is not suitable for imaging purposes. Measured activity distribution using vertical configuration array, single side detectors has a good similarity with sources. Therefore, it could be introduced as a suitable configuration for nuclear medicine imaging. It has been shown that using semiconductor P-N detectors such as P-NiO:Li, N-SnO2 :F for gamma detection could be possibly applicable for design of a one dimension array configuration with suitable spatial resolution of 2.7 mm for nuclear medicine imaging.

Design and Performance of a Miniature Lidar Wind Profiler (MLWP)

NASA Technical Reports Server (NTRS)

Cornwell, Donald M., Jr.; Miodek, Mariusz J.

1998-01-01

The directional velocity of the wind is one of the most critical components for understanding meteorological and other dynamic atmospheric processes. Altitude-resolved wind velocity measurements, also known as wind profiles or soundings, are especially necessary for providing data for meteorological forecasting and overall global circulation models (GCM's). Wind profiler data are also critical in identifying possible dangerous weather conditions for aviation. Furthermore, a system has yet to be developed for wind profiling from the surface of Mars which could also meet the stringent requirements on size, weight, and power of such a mission. Obviously, a novel wind profiling approach based on small and efficient technology is required to meet these needs. A lidar system based on small and highly efficient semiconductor lasers is now feasible due to recent developments in the laser and detector technologies. The recent development of high detection efficiency (50%), silicon-based photon-counting detectors when combined with high laser pulse repetition rates and long receiver integration times has allowed these transmitter energies to be reduced to the order of microjoules per pulse. Aerosol lidar systems using this technique have been demonstrated for both Q-switched, diode-pumped solid-state laser transmitters (lambda = 523 nm) and semiconductor diode lasers (lambda = 830 nm); however, a wind profiling lidar based on this technique has yet to be developed. We will present an investigation of a semiconductor-laser-based lidar system which uses the "edge-filter" direct detection technique to infer Doppler frequency shifts of signals backscattered from aerosols in the planetary boundary layer (PBL). Our investigation will incorporate a novel semiconductor laser design which mitigates the deleterious effects of frequency chirp in pulsed diode lasers, a problem which has limited their use in such systems in the past. Our miniature lidar could be used on a future Mars lander and perhaps find its own niche in terrestrial applications due to its potential low cost an small size.

Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

NASA Astrophysics Data System (ADS)

Abdullah, J.; Yahya, R.

2007-05-01

Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented.

BNLs Synchrotron-radiation Research Hub for Characterizing Detection Materials and Devices for the NA-22 Community

DOE Office of Scientific and Technical Information (OSTI.GOV)

Camarda, G. S.; Bolotnikov, A. E.; Cui, Y.

The goal of this project is to obtain and characterize scintillators, emerging- and commercial-compoundsemiconductor radiation- detection materials and devices provided by vendors and research organizations. The focus of our proposed research is to clarify the role of the deleterious defects and impurities responsible for the detectors' non-uniformity in scintillating crystals, commercial semiconductor radiation-detector materials, and in emerging R&D ones. Some benefits of this project addresses the need for fabricating high-performance scintillators and compound-semiconductor radiation-detectors with the proven potential for large-scale manufacturing. The findings help researchers to resolve the problems of non-uniformities in scintillating crystals, commercial semiconductor radiation-detector materials, and inmore » emerging R&D ones.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, R.; Lu, R.; Gong, S.

We demonstrate a room-temperature semiconductor-based photodetector where readout is achieved using a resonant radio-frequency (RF) circuit consisting of a microstrip split-ring resonator coupled to a microstrip busline, fabricated on a semiconductor substrate. The RF resonant circuits are characterized at RF frequencies as function of resonator geometry, as well as for their response to incident IR radiation. The detectors are modeled analytically and using commercial simulation software, with good agreement to our experimental results. Though the detector sensitivity is weak, the detector architecture offers the potential for multiplexing arrays of detectors on a single read-out line, in addition to high speedmore » response for either direct coupling of optical signals to RF circuitry, or alternatively, carrier dynamics characterization of semiconductor, or other, material systems.« less

Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung

2016-01-01

The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient tomore » the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.« less

Solid state neutron detector array

DOEpatents

Seidel, John G.; Ruddy, Frank H.; Brandt, Charles D.; Dulloo, Abdul R.; Lott, Randy G.; Sirianni, Ernest; Wilson, Randall O.

1999-01-01

A neutron detector array is capable of measuring a wide range of neutron fluxes. The array includes multiple semiconductor neutron detectors. Each detector has a semiconductor active region that is resistant to radiation damage. In one embodiment, the array preferably has a relatively small size, making it possible to place the array in confined locations. The ability of the array to detect a wide range of neutron fluxes is highly advantageous for many applications such as detecting neutron flux during start up, ramp up and full power of nuclear reactors.

Characteristics of a p-Si detector in high energy electron fields.

PubMed

Rikner, G

1985-01-01

Comparison of depth ionization distributions from a silicon semiconductor detector and depth dose curves from a plane parallel ionization chamber show that a semiconductor detector of p-type is well suited for relative electron dosimetry in the energy range of 6 to 20 MeV in Ep,0. Maximum deviations of the order of 1.5 per cent and of 1 mm were obtained down to a phantom depth of about 1 mm. The directional dependence of the detector was about 4 per cent.

Measuring the activity of a {sup 51}Cr neutrino source based on the gamma-radiation spectrum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gorbachev, V. V., E-mail: vvgor-gfb1@mail.ru; Gavrin, V. N.; Ibragimova, T. V.

A technique for the measurement of activities of intense β sources by measuring the continuous gamma-radiation (internal bremsstrahlung) spectra is developed. A method for reconstructing the spectrum recorded by a germanium semiconductor detector is described. A method for the absolute measurement of the internal bremsstrahlung spectrum of {sup 51}Cr is presented.

Optical investigations of nanostructured oxides and semiconductors

NASA Astrophysics Data System (ADS)

Irvin, Patrick Richard

This work is motivated by the prospect of building a quantum computer: a device that would allow physicists to explore quantum mechanics more deeply, and allow everyone else to keep their credit card numbers safe on the Internet. In this thesis we explore two classes of materials that are relevant to a proposed quantum computer architecture: oxides and semiconductors. Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. We investigate strained-SrTiO 3, which is ferroelectric at room-temperature, and a composite material of (Ba,Sr)TiO3 and MgO. We present optical techniques to measure electron spin dynamics with GHz dynamical bandwidth, transform-limited spectral selectivity, and phase-sensitive detection. We demonstrate this technique by measuring GHz-spin precession in n-GaAs. We also describe our efforts to optically probe InAs/GaAs and GaAs/AlGaAs quantum dots. Nanoscale devices with photonic properties have been the subject of intense research over the past decade. Potential nanophotonic applications include communications, polarization-sensitive detectors, and solar power generation. Here we show photosensitivity of a nanoscale detector written at the interface between two oxides.

Proximity charge sensing for semiconductor detectors

DOEpatents

Luke, Paul N; Tindall, Craig S; Amman, Mark

2013-10-08

A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

Semiconductor crystal high resolution imager

NASA Technical Reports Server (NTRS)

Matteson, James (Inventor); Levin, Craig S. (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

NASA Astrophysics Data System (ADS)

Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

2018-01-01

Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

High-quality 3D correction of ring and radiant artifacts in flat panel detector-based cone beam volume CT imaging

NASA Astrophysics Data System (ADS)

Abu Anas, Emran Mohammad; Kim, Jae Gon; Lee, Soo Yeol; Kamrul Hasan, Md

2011-10-01

The use of an x-ray flat panel detector is increasingly becoming popular in 3D cone beam volume CT machines. Due to the deficient semiconductor array manufacturing process, the cone beam projection data are often corrupted by different types of abnormalities, which cause severe ring and radiant artifacts in a cone beam reconstruction image, and as a result, the diagnostic image quality is degraded. In this paper, a novel technique is presented for the correction of error in the 2D cone beam projections due to abnormalities often observed in 2D x-ray flat panel detectors. Template images are derived from the responses of the detector pixels using their statistical properties and then an effective non-causal derivative-based detection algorithm in 2D space is presented for the detection of defective and mis-calibrated detector elements separately. An image inpainting-based 3D correction scheme is proposed for the estimation of responses of defective detector elements, and the responses of the mis-calibrated detector elements are corrected using the normalization technique. For real-time implementation, a simplification of the proposed off-line method is also suggested. Finally, the proposed algorithms are tested using different real cone beam volume CT images and the experimental results demonstrate that the proposed methods can effectively remove ring and radiant artifacts from cone beam volume CT images compared to other reported techniques in the literature.

Towards time-of-flight PET with a semiconductor detector.

PubMed

Ariño-Estrada, Gerard; Mitchell, Gregory S; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J; Shah, Kanai S; Cherry, Simon R

2018-02-16

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

Towards time-of-flight PET with a semiconductor detector

NASA Astrophysics Data System (ADS)

Ariño-Estrada, Gerard; Mitchell, Gregory S.; Kwon, Sun Il; Du, Junwei; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.; Cherry, Simon R.

2018-02-01

The feasibility of using Cerenkov light, generated by energetic electrons following 511 keV photon interactions in the semiconductor TlBr, to obtain fast timing information for positron emission tomography (PET) was evaluated. Due to its high refractive index, TlBr is a relatively good Cerenkov radiator and with its wide bandgap, has good optical transparency across most of the visible spectrum. Coupling an SiPM photodetector to a slab of TlBr (TlBr-SiPM) yielded a coincidence timing resolution of 620 ps FWHM between the TlBr-SiPM detector and a LFS reference detector. This value improved to 430 ps FWHM by applying a high pulse amplitude cut based on the TlBr-SiPM and reference detector signal amplitudes. These results are the best ever achieved with a semiconductor PET detector and already approach the performance required for time-of-flight. As TlBr has higher stopping power and better energy resolution than the conventional scintillation detectors currently used in PET scanners, a hybrid TlBr-SiPM detector with fast timing capability becomes an interesting option for further development.

A method to reproduce alpha-particle spectra measured with semiconductor detectors.

PubMed

Timón, A Fernández; Vargas, M Jurado; Sánchez, A Martín

2010-01-01

A method is proposed to reproduce alpha-particle spectra measured with silicon detectors, combining analytical and computer simulation techniques. The procedure includes the use of the Monte Carlo method to simulate the tracks of alpha-particles within the source and in the detector entrance window. The alpha-particle spectrum is finally obtained by the convolution of this simulated distribution and the theoretical distributions representing the contributions of the alpha-particle spectrometer to the spectrum. Experimental spectra from (233)U and (241)Am sources were compared with the predictions given by the proposed procedure, showing good agreement. The proposed method can be an important aid for the analysis and deconvolution of complex alpha-particle spectra. Copyright 2009 Elsevier Ltd. All rights reserved.

JFET preamplifiers with different reset techniques on detector-grade high-resistivity silicon

NASA Astrophysics Data System (ADS)

Dalla Betta, G. F.; Manghisoni, M.; Ratti, L.; Re, V.; Speziali, V.

2003-10-01

This paper presents the experimental results relevant to JFET charge preamplifiers fabricated in a detector-compatible technology. This fabrication process, developed at the Istituto per la Ricerca Scientifica e Tecnologica (ITC-IRST), Trento, Italy, is being tuned with the aim of integrating a multichannel mixed analog-digital circuit together with semiconductor detectors in a high-resistivity substrate. Possible applications are in the field of medical and industrial imaging, in space and high energy physics experiments. An all-NJFET charge sensitive amplifier, which can use either a resistive or a nonresistive reset in the feedback network, has been tested. The two configurations have been studied, paying particular attention to noise performances, in view of the design of the complete readout channel.

Uncooled infrared photon detection concepts and devices

NASA Astrophysics Data System (ADS)

Piyankarage, Viraj Vishwakantha Jayaweera

This work describes infrared (IR) photon detector techniques based on novel semiconductor device concepts and detector designs. The aim of the investigation was to examine alternative IR detection concepts with a view to resolve some of the issues of existing IR detectors such as operating temperature and response range. Systems were fabricated to demonstrate the following IR detection concepts and determine detector parameters: (i) Near-infrared (NIR) detection based on dye-sensitization of nanostructured semiconductors, (ii) Displacement currents in semiconductor quantum dots (QDs) embedded dielectric media, (iii) Split-off band transitions in GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. A far-infrared detector based on GaSb homojunction interfacial workfunction internal photoemission (HIWIP) structure is also discussed. Device concepts, detector structures, and experimental results discussed in the text are summarized below. Dye-sensitized (DS) detector structures consisting of n-TiO 2/Dye/p-CuSCN heterostructures with several IR-sensitive dyes showed response peaks at 808, 812, 858, 866, 876, and 1056 nm at room temperature. The peak specific-detectivity (D*) was 9.5x1010 cm Hz-1/2 W-1 at 812 nm at room temperature. Radiation induced carrier generation alters the electronic polarizability of QDs provided the quenching of excitation is suppressed by separation of the QDs. A device constructed to illustrate this concept by embedding PbS QDs in paraffin wax showed a peak D* of 3x108 cm Hz 1/2 W-1 at ˜540 nm at ambient temperature. A typical HEIWIP/HIWIP detector structures consist of single (or multiple) period(s) of doped emitter(s) and undoped barrier(s) which are sandwiched between two highly doped contact layers. A p-GaAs/AlGaAs HEIWIP structure showed enhanced absorption in NIR range due to heavy/light-hole band to split-off band transitions and leading to the development of GaAs based uncooled sensors for IR detection in the 2--5 microm wavelength range with a peak D* of 6.8x105 cm Hz1/2 W-1. A HIWIP detector based on p-GaSb/GaSb showed a free carrier response threshold wavelength at 97 microm (˜3 THz) with a peak D* of 5.7x1011 cm Hz1/2 W-1 at 36 microm and 4.9 K. In this detector, a bolometric type response in the 97--200 microm (3--1.5 THz) range was also observed. INDEX WORDS: Infrared detectors, Photon detection, NIR detectors, THz detectors, Uncooled detectors, Dye-sensitized, IR dye, Quantum dot, Split-off band, GaSb, GaAs, AlGaAs, TiO2, CuSCN, PbS, Homojunction, Heterojunction, Workfunction, Photoemission, Displacement currents, 1/f noise.

Synthesis and electronic properties of nanophase semiconductor materials

NASA Astrophysics Data System (ADS)

Sailor, Michael J.

1993-05-01

The objective of the research effort is to understand and learn to control the morphologic and electronic properties of electrodeposited nanophase semiconductors. The initial work has focused on electrodeposition of nanophase CdSe, using a sequential monolayer deposition technique that we are developing. We are currently extending the synthesis phase of this project into silicon, silicon carbide, and phosphor materials. This work also encompasses studying semiconductor electrodeposition into materials with restricted dimensions, such as microporous alumina and porous silicon membranes. By growing films with very small grain sizes, we hope to produce and study materials that display unusual electronic or luminescent effects. We are primarily interested in the electronic properties of the II-VI and group IV materials, for potential applications in nanoscale electronics and optical detector technologies. The phosphors are being studied for their potential as efficient high-resolution display materials.

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Layered semiconductor neutron detectors

DOEpatents

Mao, Samuel S; Perry, Dale L

2013-12-10

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Solid state neutron detector array

DOEpatents

Seidel, J.G.; Ruddy, F.H.; Brandt, C.D.; Dulloo, A.R.; Lott, R.G.; Sirianni, E.; Wilson, R.O.

1999-08-17

A neutron detector array is capable of measuring a wide range of neutron fluxes. The array includes multiple semiconductor neutron detectors. Each detector has a semiconductor active region that is resistant to radiation damage. In one embodiment, the array preferably has a relatively small size, making it possible to place the array in confined locations. The ability of the array to detect a wide range of neutron fluxes is highly advantageous for many applications such as detecting neutron flux during start up, ramp up and full power of nuclear reactors. 7 figs.

System to quantify gamma-ray radial energy deposition in semiconductor detectors

DOEpatents

Kammeraad, Judith E.; Blair, Jerome J.

2001-01-01

A system for measuring gamma-ray radial energy deposition is provided for use in conjunction with a semiconductor detector. The detector comprises two electrodes and a detector material, and defines a plurality of zones within the detecting material in parallel with the two electrodes. The detector produces a charge signal E(t) when a gamma-ray interacts with the detector. Digitizing means are provided for converting the charge signal E(t) into a digitized signal. A computational means receives the digitized signal and calculates in which of the plurality of zones the gamma-ray deposited energy when interacting with the detector. The computational means produces an output indicating the amount of energy deposited by the gamma-ray in each of the plurality of zones.

GaTe semiconductor for radiation detection

DOEpatents

Payne, Stephen A [Castro Valley, CA; Burger, Arnold [Nashville, TN; Mandal, Krishna C [Ashland, MA

2009-06-23

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Radiation detection system using semiconductor detector with differential carrier trapping and mobility

DOEpatents

Whited, Richard C.

1981-01-01

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

Novel Drift Structures for Silicon and Compound Semiconductor X-Ray and Gamma-Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley E. Patt; Jan S. Iwanczyk

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that we discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current (both bulk silicon dark current and surface dark current) and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector.

Characterization of CdTe and (CdZn)Te detectors with different metal contacts

NASA Astrophysics Data System (ADS)

Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

2013-09-01

In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

NASA Astrophysics Data System (ADS)

Samedov, V. V.

2017-12-01

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

Antenna-coupled Superconducting Bolometers for Observations of the Cosmic Microwave Background Polarization

NASA Astrophysics Data System (ADS)

Myers, Michael James

We describe the development of a novel millimeter-wave cryogenic detector. The device integrates a planar antenna, superconducting transmission line, bandpass filter, and bolometer onto a single silicon wafer. The bolometer uses a superconducting Transition-Edge Sensor (TES) thermistor, which provides substantial advantages over conventional semiconductor bolometers. The detector chip is fabricated using standard micro-fabrication techniques. This highly-integrated detector architecture is particularly well-suited for use in the de- velopment of polarization-sensitive cryogenic receivers with thousands of pixels. Such receivers are needed to meet the sensitivity requirements of next-generation cosmic microwave background polarization experiments. The design, fabrication, and testing of prototype array pixels are described. Preliminary considerations for a full array design are also discussed. A set of on-chip millimeter-wave test structures were developed to help understand the performance of our millimeter-wave microstrip circuits. These test structures produce a calibrated transmission measurement for an arbitrary two-port circuit using optical techniques, rather than a network analyzer. Some results of fabricated test structures are presented.

Testing and Comparison of Imaging Detectors for Electrons in the Energy Range 10-20 keV

NASA Astrophysics Data System (ADS)

Matheson, J.; Moldovan, G.; Kirkland, A.; Allinson, N.; Abrahams, J. P.

2017-11-01

Interest in direct detectors for low-energy electrons has increased markedly in recent years. Detection of electrons in the energy range up to low tens of keV is important in techniques such as photoelectron emission microscopy (PEEM) and electron backscatter diffraction (EBSD) on scanning electron microscopes (SEMs). The PEEM technique is used both in the laboratory and on synchrotron light sources worldwide. The ubiquity of SEMs means that there is a very large market for EBSD detectors for materials studies. Currently, the most widely used detectors in these applications are based on indirect detection of incident electrons. Examples include scintillators or microchannel plates (MCPs), coupled to CCD cameras. Such approaches result in blurring in scintillators/phosphors, distortions in optical systems, and inefficiencies due the limited active area of MCPs. In principle, these difficulties can be overcome using direct detection in a semiconductor device. Growing out of a feasibility study into the use of a direct detector for use on an XPEEM, we have built at Rutherford Appleton Laboratory a system to illuminate detectors with an electron beam of energy up to 20 keV . We describe this system in detail. It has been used to measure the performance of a custom back-thinned monolithic active pixel sensor (MAPS), a detector based on the Medipix2 chip, and a commercial detector based on MCPs. We present a selection of the results from these measurements and compare and contrast different detector types.

New technologies for UV detectors

NASA Technical Reports Server (NTRS)

Joseph, C. L.

1993-01-01

Several technologies are currently being developed, leading to substantial improvements in the performance of UV detectors or significant reductions in power or weight. Four technologies discussed are (1) thin-film coatings to enhance the UV sensitivity of CCD's, (2) highly innovative magnet assemblies that dramatically reduce weight and result in virtually no external flux, (3) new techniques for curving microchannel plates (MCP's) so that single plates can be used to prevent ion feedback and present highly localized charge clouds to an anode structure, and (4) high-performance alternatives to glass-based MCP's. In item (2), for example, very robust magnets are made out of rare earth materials such as samarium cobalt, and cladding magnets are employed to prevent flux from escaping from the detector into the external environment. These new ultralight magnet assemblies are able to create strong, exceptionally uniform magnetic fields for image intensification and focusing of photoelectrons. The principle advantage of such detectors is the quantum efficiencies of 70-80 percent obtained throughout ultraviolet wavelengths (900-2000 A), the highest of any device. Despite the improvements achieved under item (3), high-performance alternatives to conventional glass-based MCP's potentially offer three distinct new advantages that include (1) a 30-100-fold improvement in dynamic range resulting in correspondingly higher signal-to-noise ratios, (2) the use of pure dielectric and semiconductor materials that will not outgas contaminants that eventually destroy photocathodes, and (3) channels that have constant spacing providing long-ranged order since the plates are made using photolithography techniques from the semiconductor industry. The manufacturers of these advanced-technology MCP's, however, are a couple of years away from actually producing a functioning image intensifier. In contrast to the use of CCD's for optical, ground based observations, there is no single detector technology in the ultraviolet that dominates or is as universally suitable for all applications. Thus, several technological problems, recent advances, and the impact that these new enabling technologies represent for UV applications are addressed.

Observation of Structure of Surfaces and Interfaces by Synchrotron X-ray Diffraction: Atomic-Scale Imaging and Time-Resolved Measurements

NASA Astrophysics Data System (ADS)

Wakabayashi, Yusuke; Shirasawa, Tetsuroh; Voegeli, Wolfgang; Takahashi, Toshio

2018-06-01

The recent developments in synchrotron optics, X-ray detectors, and data analysis algorithms have enhanced the capability of the surface X-ray diffraction technique. This technique has been used to clarify the atomic arrangement around surfaces in a non-contact and nondestructive manner. An overview of surface X-ray diffraction, from the historical development to recent topics, is presented. In the early stage of this technique, surface reconstructions of simple semiconductors or metals were studied. Currently, the surface or interface structures of complicated functional materials are examined with sub-Å resolution. As examples, the surface structure determination of organic semiconductors and of a one-dimensional structure on silicon are presented. A new frontier is time-resolved interfacial structure analysis. A recent observation of the structure and dynamics of the electric double layer of ionic liquids, and an investigation of the structural evolution in the wettability transition on a TiO2 surface that utilizes a newly designed time-resolved surface diffractometer, are presented.

Semiconductor Radiation Detectors: Basic principles and some uses of a recent tool that has revolutionized nuclear physics are described.

PubMed

Goulding, F S; Stone, Y

1970-10-16

The past decade has seen the rapid development and exploitation of one of the most significant tools of nuclear physics, the semiconductor radiation detector. Applications of the device to the analysis of materials promises to be one of the major contributions of nuclear research to technology, and may even assist in some aspects of our environmental problems. In parallel with the development of these applications, further developments in detectors for nuclear research are taking place: the use of very thin detectors for heavyion identification, position-sensitive detectors for nuclear-reaction studies, and very pure germanium for making more satisfactory detectors for many applications suggest major future contributions to physics.

High-efficiency neutron detectors and methods of making same

DOEpatents

McGregor, Douglas S.; Klann, Raymond

2007-01-16

Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as ¹⁰B or ⁶LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.

Semiconductor radiation detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.

A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can bemore » placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.« less

Hard X-ray and low-energy gamma-ray spectrometers

NASA Technical Reports Server (NTRS)

Gehrels, N.; Crannell, C. J.; Orwig, L. E.; Forrest, D. J.; Lin, R. P.; Starr, R.

1988-01-01

Basic principles of operation and characteristics of scintillation and semi-conductor detectors used for solar hard X-ray and gamma-ray spectrometers are presented. Scintillation materials such as NaI offer high stopping power for incident gamma rays, modest energy resolution, and relatively simple operation. They are, to date, the most often used detector in solar gamma-ray spectroscopy. The scintillator BGO has higher stopping power than NaI, but poorer energy resolution. The primary advantage of semi-conductor materials such as Ge is their high-energy resolution. Monte-Carlo simulations of the response of NaI and Ge detectors to model solar flare inputs show the benefit of high resoluton for studying spectral lines. No semi-conductor material besides Ge is currently available with adequate combined size and purity to make general-use hard X-ray and gamma-ray detectors for solar studies.

Review of current neutron detection systems for emergency response

DOE PAGES

Mukhopadhyay, Sanjoy; Maurer, Richard; Guss, Paul; ...

2014-09-05

Neutron detectors are utilized in a myriad of applications—from safeguarding special nuclear materials (SNM) to determining lattice spacing in soft materials. The transformational changes taking place in neutron detection and imaging techniques in the last few years are largely being driven by the global shortage of helium-3 ( 3He). This article reviews the status of neutron sensors used specifically for SNM detection in radiological emergency response. These neutron detectors must be highly efficient, be rugged, have fast electronics to measure neutron multiplicity, and be capable of measuring direction of the neutron sources and possibly image them with high spatial resolution.more » Neutron detection is an indirect physical process: neutrons react with nuclei in materials to initiate the release of one or more charged particles that produce electric signals that can be processed by the detection system. Therefore, neutron detection requires conversion materials as active elements of the detection system; these materials may include boron-10 ( 10B), lithium-6 ( 6Li), and gadollinium-157 ( 157Gd), to name a few, but the number of materials available for neutron detection is limited. However, in recent years, pulse-shape-discriminating plastic scintillators, scintillators made of helium-4 ( 4He) under high pressure, pillar and trench semiconductor diodes, and exotic semiconductor neutron detectors made from uranium oxide and other materials have widely expanded the parameter space in neutron detection methodology. In this article we will pay special attention to semiconductor-based neutron sensors. Finally, modern microfabricated nanotubes covered inside with neutron converter materials and with very high aspect ratios for better charge transport will be discussed.« less

Review of current neutron detection systems for emergency response

NASA Astrophysics Data System (ADS)

Mukhopadhyay, Sanjoy; Maurer, Richard; Guss, Paul; Kruschwitz, Craig

2014-09-01

Neutron detectors are used in a myriad of applications—from safeguarding special nuclear materials (SNM) to determining lattice spacing in soft materials. The transformational changes taking place in neutron detection and imaging techniques in the last few years are largely being driven by the global shortage of helium-3 (3He). This article reviews the status of neutron sensors used specifically for SNM detection in radiological emergency response. These neutron detectors must be highly efficient, be rugged, have fast electronics to measure neutron multiplicity, and be capable of measuring direction of the neutron sources and possibly image them with high spatial resolution. Neutron detection is an indirect physical process: neutrons react with nuclei in materials to initiate the release of one or more charged particles that produce electric signals that can be processed by the detection system. Therefore, neutron detection requires conversion materials as active elements of the detection system; these materials may include boron-10 (10B), lithium-6 (6Li), and gadollinium-157 (157Gd), to name a few, but the number of materials available for neutron detection is limited. However, in recent years, pulse-shape-discriminating plastic scintillators, scintillators made of helium-4 (4He) under high pressure, pillar and trench semiconductor diodes, and exotic semiconductor neutron detectors made from uranium oxide and other materials have widely expanded the parameter space in neutron detection methodology. In this article we will pay special attention to semiconductor-based neutron sensors. Modern microfabricated nanotubes covered inside with neutron converter materials and with very high aspect ratios for better charge transport will be discussed.

Segmented AC-coupled readout from continuous collection electrodes in semiconductor sensors

DOEpatents

Sadrozinski, Hartmut F. W.; Seiden, Abraham; Cartiglia, Nicolo

2017-04-04

Position sensitive radiation detection is provided using a continuous electrode in a semiconductor radiation detector, as opposed to the conventional use of a segmented electrode. Time constants relating to AC coupling between the continuous electrode and segmented contacts to the electrode are selected to provide position resolution from the resulting configurations. The resulting detectors advantageously have a more uniform electric field than conventional detectors having segmented electrodes, and are expected to have much lower cost of production and of integration with readout electronics.

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Burger, Arnold; Dudley, Michael; Matyi, Richard J.; Ramachandran, Narayanan; Sha, Yi-Gao; Volz, Martin; Shih, Hung-Dah

1998-01-01

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

Conceptual design of a hybrid Ge:Ga detector array

NASA Technical Reports Server (NTRS)

Parry, C. M.

1984-01-01

For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

PubMed

Ha, Jang Ho; Kim, Han Soo

2013-11-01

The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

Thallium bromide radiation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, K.S.; Lund, J.C.; Olschner, F.

1989-02-01

Radiation detectors have been fabricated from crystals of the semiconductor material thallium bromide (TlBr) and the performance of these detectors as room temperature photon spectrometers has been measured. These detectors exhibit improved energy resolution over previously reported TlBr detectors. These results indicate that TlBr is a very promising radiation detector material.

High resolution scintillation detector with semiconductor readout

DOEpatents

Levin, Craig S.; Hoffman, Edward J.

2000-01-01

A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

Microelectronics used for Semiconductor Imaging Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heijne, Erik H. M.

Semiconductor crystal technology, microelectronics developments and nuclear particle detection have been in a relation of symbiosis, all the way from the beginning. The increase of complexity in electronics chips can now be applied to obtain much more information on the incident nuclear radiation. Some basic technologies are described, in order to acquire insight in possibilities and limitations for the most recent detectors.

Application of Timepix3 based CdTe spectral sensitive photon counting detector for PET imaging

NASA Astrophysics Data System (ADS)

Turecek, Daniel; Jakubek, Jan; Trojanova, Eliska; Sefc, Ludek; Kolarova, Vera

2018-07-01

Positron emission tomography (PET) is a nuclear medicine functional imaging technique. It is used in clinical oncology (medical imaging of tumors and the search for metastases), and pre-clinical studies using animals. PET uses small amounts of radioactive materials (radiotracers) and a special photon sensitive camera. Most of these cameras use scintillators with photomultipliers as detectors. However, these detectors have limited energy sensitivity and large pixels. Therefore, the false signal caused by a scattering poses a significant problem. In this work we study properties of position, energy and time sensitive semiconductor detector of Timepix3 type and its applicability for PET measurements. This work presents an initial study and evaluation of two Timepix3 detectors with 2 mm thick CdTe sensors used in simplified geometry for PET imaging. The study is performed on 2 samples - a capillary tube and a cylindrical plexiglass phantom with cavities. Both samples are filled with fluodeoxyglucose (FDG) solution that is used as a radiotracer. The Timepix3 offers better properties compared to conventional detectors - high granularity (55 μm pixel pitch), good energy resolution (1 keV at 60 keV) and sufficient time resolution (1.6 ns). The spectral sensitivity of Timepix3 together with coincidence/anticoincidence technique allows for significant reduction of background signal caused by Compton scattering and internal X-ray fluorescence of Cd and Te.

ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

NASA Astrophysics Data System (ADS)

De Jesus, Joel

The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of devices. Growth interruptions improvements were evident both by sharper PL peaks on multilayer structures and by narrow and more efficient electroluminescence emission on intersubband devices. By using these techniques, and using materials lattice matched to InP, we then developed the first II-VI based QC detector with high responsivity for 3.5 and 2.5mum IR wavelengths, explored the combination of several detector cores arrangements to make a broadband IR detectors, and achieved a QC broadband detector operating from 3.3 to 6 mum also with high responsivity and high detectivity. For the visible lasers, we have successfully combined distributed Bragg reflectors (DBRs) and resonant cavity MQW structures into a single device to achieve green semiconductor disk lasers (SDL). We also investigated novel strain engineered multiple quantum wells (MQWs) using CdSe and ZnSe strained layers. This last research provided materials with shorter wavelength activity in the IR, achieving absorption as low as 2.5 mum, and visible red emission lattice matched to InP, providing new building blocks for all of the above mentioned devices. Our results demonstrate the outstanding capabilities of the material system, and provide tools and techniques for further development.

Crystal Growth, Characterization and Fabrication of Cadmium Zinc Telluride-based Nuclear Detectors

NASA Astrophysics Data System (ADS)

Krishna, Ramesh M.

In today's world, nuclear radiation is seeing more and more use by humanity as time goes on. Nuclear power plants are being built to supply humanity's energy needs, nuclear medical imaging is becoming more popular for diagnosing cancer and other diseases, and control of weapons-grade nuclear materials is becoming more and more important for national security. All of these needs require high-performance nuclear radiation detectors which can accurately measure the type and amount of radiation being used. However, most current radiation detection materials available commercially require extensive cooling, or simply do not function adequately for high-energy gamma-ray emitting nuclear materials such as uranium and plutonium. One of the most promising semiconductor materials being considered to create a convenient, field-deployable nuclear detector is cadmium zinc telluride (CdZnTe, or CZT). CZT is a ternary semiconductor compound which can detect high-energy gamma-rays at room temperature. It offers high resistivity (≥ 1010 O-cm), a high band gap (1.55 eV), and good electron transport properties, all of which are required for a nuclear radiation detector. However, one significant issue with CZT is that there is considerable difficulty in growing large, homogeneous, defect-free single crystals of CZT. This significantly increases the cost of producing CZT detectors, making CZT less than ideal for mass-production. Furthermore, CZT suffers from poor hole transport properties, which creates significant problems when using it as a high-energy gamma-ray detector. In this dissertation, a comprehensive investigation is undertaken using a successful growth method for CZT developed at the University of South Carolina. This method, called the solvent-growth technique, reduces the complexity required to grow detector-grade CZT single crystals. It utilizes a lower growth temperature than traditional growth methods by using Te as a solvent, while maintaining the advantages of crystal homogeneity of other modern CZT growth techniques. However, information about crystals grown with this method has not been undertaken in a comprehensive way thus far. In this work, Cd0.9Zn0.1Te is grown using the solvent-growth method using zone-refined precursor materials loaded into carbon-coated quartz ampoules. Ampoules were sealed and crystal growth was performed using crystal growth furnaces built in-house at USC. Ingots 1-2" in diameter produced using the solvent-growth method were wafered, processed, and polished for characterization. Semiconductor characterization is performed on the CZT crystals to determine band gap, elemental stoichiometry, and electrical resistivity. Surface modification studies were undertaken to determine if surface leakage current can be reduced using sulfur passivation. XPS studies were used to confirm the effects of passivation on the surface states, and electrical characterization was performed to measure the effects of passivation on the CZT crystals. Deep-level and surface defect studies were conducted on the CZT samples to determine the type and intensity of defects present in the crystals which may affect detector performance. Finally, nuclear detectors were fabricated and characterized using analog and digital radiation detection systems to measure their performance and energy resolution.

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

Soft x ray window encapsulant for HgI2 detectors

NASA Technical Reports Server (NTRS)

Entine, G.; Shah, K.; Squillante, M.

1987-01-01

HgI2 is an excellent semiconductor material for a low energy, room temperature x-ray spectrometer. The high values of the atomic numbers for its constituent elements gives high x-ray and gamma ray stopping power. The band gap of HgI2 is significantly higher than other commonly used semiconductors. Owing to the large value band gap, the leakage current for HgI2 devices is smaller, thus allowing low noise performance. Devices fabricated from HgI2 crystals have demonstrated energy resolution sufficient to distinguish the x-ray emission from the neighboring elements on the periodic table. Also the power requirements of HgI2 are very low. These characteristics make a HgI2 spectrometer an ideal component in a satellite based detection system. Unfortunately, HgI2 crystals tend to deteriorate with time, even if protected by standard semiconductor encapsulants. This degradation ruins the performance of the device in terms of its energy resolution and pulse amplitude. The degrading mechanism is believed to be material loss occurring from below the electrodes, due to high vapor pressure of HgI2 at room temperature. To address this major obstacle to rapid expansion of HgI2 technology, a research program aimed at improving device stability by encapsulation with inert polymeric materials was carried out. The program focused specifically on optimizing the encapsulant materials and their deposition techniques. The principal objectives for this program were device encapsulation, device testing, and accelerated testing to ensure very long term stability of these high resolution sensors. A variety of encapsulants were investigated with the selection criteria based on their chemical diffusion barrier properties, mechanical stability, reactivity, and morphology of encapsulant films. The investigation covered different classes of encapsulants including solvent based encapsulants, vapor deposited encapsulants, and plasma polymerized encapsulants. A variety of characterization techniques were employed to examine their effectiveness in stabilizing HgI2 devices; these included permeability evaluation, vacuum and heat testing, scanning electron microscopy (SEM) as well as studying the detector performance of coated detectors. The plasma polymerized films appear to have entirely solved the HgI2 degradation problem. Another achievement of this program was the development of an accelerated testing technique which correlates extremely well with long term tesing.

A semiconductor radiation imaging pixel detector for space radiation dosimetry

NASA Astrophysics Data System (ADS)

Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

2015-07-01

Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented.

Medipix2 based CdTe microprobe for dental imaging

NASA Astrophysics Data System (ADS)

Vykydal, Z.; Fauler, A.; Fiederle, M.; Jakubek, J.; Svestkova, M.; Zwerger, A.

2011-12-01

Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

NASA Technical Reports Server (NTRS)

Wagner, L. J.

1977-01-01

The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

Visualization of TlBr ionic transport mechanism by the Accelerated Device Degradation technique

NASA Astrophysics Data System (ADS)

Datta, Amlan; Becla, Piotr; Motakef, Shariar

2015-06-01

Thallium Bromide (TlBr) is a promising gamma radiation semiconductor detector material. However, it is an ionic semiconductor and suffers from polarization. As a result, TlBr devices degrade rapidly at room temperature. Polarization is associated with the flow of ionic current in the crystal under electrical bias, leading to the accumulation of charged ions at the device's electrical contacts. We report a fast and reliable direct characterization technique to identify the effects of various growth and post-growth process modifications on the polarization process. The Accelerated Device Degradation (ADD) characterization technique allows direct observation of nucleation and propagation of ionic transport channels within the TlBr crystals under applied bias. These channels are observed to be initiated both directly under the electrode as well as away from it. The propagation direction is always towards the anode indicating that Br- is the mobile diffusing species within the defect channels. The effective migration energy of the Br- ions was calculated to be 0.33±0.03 eV, which is consistent with other theoretical and experimental results.

Semiconductor projectile impact detector

NASA Technical Reports Server (NTRS)

Shriver, E. L. (Inventor)

1977-01-01

A semiconductor projectile impact detector is described for use in determining micrometeorite presence, as well as its flux and energy comprising a photovoltaic cell which generates a voltage according to the light and heat emitted by the micrometeorites upon impact. A counter and peak amplitude measuring device were used to indicate the number of particules which strike the surface of the cell as well as the kinetic energy of each of the particles.

Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors

DTIC Science & Technology

2014-06-28

constructed from inexpensive semiconductor lasers could lead to the development of novel neuro-inspired optical computing devices (threshold detectors ...optical computing devices (threshold detectors , logic gates, signal recognition, etc.). Other topics of research included the analysis of extreme events in...Extreme events is nowadays a highly active field of research. Rogue waves, earthquakes of high magnitude and financial crises are all rare and

Fluorescence-suppressed time-resolved Raman spectroscopy of pharmaceuticals using complementary metal-oxide semiconductor (CMOS) single-photon avalanche diode (SPAD) detector.

PubMed

Rojalin, Tatu; Kurki, Lauri; Laaksonen, Timo; Viitala, Tapani; Kostamovaara, Juha; Gordon, Keith C; Galvis, Leonardo; Wachsmann-Hogiu, Sebastian; Strachan, Clare J; Yliperttula, Marjo

2016-01-01

In this work, we utilize a short-wavelength, 532-nm picosecond pulsed laser coupled with a time-gated complementary metal-oxide semiconductor (CMOS) single-photon avalanche diode (SPAD) detector to acquire Raman spectra of several drugs of interest. With this approach, we are able to reveal previously unseen Raman features and suppress the fluorescence background of these drugs. Compared to traditional Raman setups, the present time-resolved technique has two major improvements. First, it is possible to overcome the strong fluorescence background that usually interferes with the much weaker Raman spectra. Second, using the high photon energy excitation light source, we are able to generate a stronger Raman signal compared to traditional instruments. In addition, observations in the time domain can be performed, thus enabling new capabilities in the field of Raman and fluorescence spectroscopy. With this system, we demonstrate for the first time the possibility of recording fluorescence-suppressed Raman spectra of solid, amorphous and crystalline, and non-photoluminescent and photoluminescent drugs such as caffeine, ranitidine hydrochloride, and indomethacin (amorphous and crystalline forms). The raw data acquired by utilizing only the picosecond pulsed laser and a CMOS SPAD detector could be used for identifying the compounds directly without any data processing. Moreover, to validate the accuracy of this time-resolved technique, we present density functional theory (DFT) calculations for a widely used gastric acid inhibitor, ranitidine hydrochloride. The obtained time-resolved Raman peaks were identified based on the calculations and existing literature. Raman spectra using non-time-resolved setups with continuous-wave 785- and 532-nm excitation lasers were used as reference data. Overall, this demonstration of time-resolved Raman and fluorescence measurements with a CMOS SPAD detector shows promise in diverse areas, including fundamental chemical research, the pharmaceutical setting, process analytical technology (PAT), and the life sciences.

An ultra low-power CMOS automatic action potential detector.

PubMed

Gosselin, Benoit; Sawan, Mohamad

2009-08-01

We present a low-power complementary metal-oxide semiconductor (CMOS) analog integrated biopotential detector intended for neural recording in wireless multichannel implants. The proposed detector can achieve accurate automatic discrimination of action potential (APs) from the background activity by means of an energy-based preprocessor and a linear delay element. This strategy improves detected waveforms integrity and prompts for better performance in neural prostheses. The delay element is implemented with a low-power continuous-time filter using a ninth-order equiripple allpass transfer function. All circuit building blocks use subthreshold OTAs employing dedicated circuit techniques for achieving ultra low-power and high dynamic range. The proposed circuit function in the submicrowatt range as the implemented CMOS 0.18- microm chip dissipates 780 nW, and it features a size of 0.07 mm(2). So it is suitable for massive integration in a multichannel device with modest overhead. The fabricated detector succeeds to automatically detect APs from underlying background activity. Testbench validation results obtained with synthetic neural waveforms are presented.

Different Detector Types Used in Plasma Physics Experiment

NASA Astrophysics Data System (ADS)

Balovnev, A. V.; Manokhin, I. L.; Grigoryeva, I. G.; Kostyushin, V. A.; Savelov, A. S.; Salakhutdinov, G. Kh.

2017-12-01

We analyzed the possibility of using different detector types (semiconductor, scintillator, thermoluminescent, nuclear emulsions) for plasma diagnostics. We investigated the main characteristics of such detectors, on the basis of which an X-ray spectrometer complex was created.

Position-sensitive coincidence detection of nuclear reaction products at the Prague Van-de-Graaff accelerator

NASA Astrophysics Data System (ADS)

Granja, Carlos; Kraus, Vaclav; Pugatch, Valery; Kohout, Zdenek

2017-06-01

In low-energy nuclear reactions of astrophysical interest or fusion studies the spatial- and time-correlated detection of two and more reaction products can be a valuable tool in studies of reaction mechanisms, resolving reaction channels and measuring angular distributions of reaction products. For this purpose we constructed a configurable array of position-sensitive detectors based on the hybrid semiconductor pixel detector Timepix. Additional analog-signal electronics provide self-trigger together with extended multi-device control and synchronized readout electronics by a customized control and coincidence unit. The instrumentation, developed and used for detection of fission fragments in spontaneous and neutron induced fission as well as in charged particle detection in neutron induced reactions, is being implemented for low-energy light-ion induced nuclear reactions. Application and demonstration of the technique with two Timepix detectors on p+p elastic scattering at the Van-de-Graaff (VdG) accelerator in Prague is given.

Fabrication of Superconducting Detectors for Studying the Universe

NASA Technical Reports Server (NTRS)

Brown, Ari-David

2012-01-01

Superconducting detectors offer unparalleled means of making astronomical/cosmological observations. Fabrication of these detectors is somewhat unconventional; however, a lot of novel condensed matter physics/materials scientific discoveries and semiconductor fabrication processes can be generated in making these devices.

Fine-Pitch CdTe Detector for Hard X-Ray Imaging and Spectroscopy of the Sun with the FOXSI Rocket Experiment

NASA Technical Reports Server (NTRS)

Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'lchiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Bultrago-Casas, Juan Camilo; Krucker, Sam;

Fine-pitch CdTe detector for hard X-ray imaging and spectroscopy of the Sun with the FOXSI rocket experiment

NASA Astrophysics Data System (ADS)

Ishikawa, Shin-nosuke; Katsuragawa, Miho; Watanabe, Shin; Uchida, Yuusuke; Takeda, Shin'ichiro; Takahashi, Tadayuki; Saito, Shinya; Glesener, Lindsay; Buitrago-Casas, Juan Camilo; Krucker, Säm.; Christe, Steven

2016-07-01

We have developed a fine-pitch hard X-ray (HXR) detector using a cadmium telluride (CdTe) semiconductor for imaging and spectroscopy for the second launch of the Focusing Optics Solar X-ray Imager (FOXSI). FOXSI is a rocket experiment to perform high sensitivity HXR observations from 4 to 15 keV using the new technique of HXR focusing optics. The focal plane detector requires <100μm position resolution (to take advantage of the angular resolution of the optics) and ≈1 keV energy resolution (full width at half maximum (FWHM)) for spectroscopy down to 4 keV, with moderate cooling (>-30°C). Double-sided silicon strip detectors were used for the first FOXSI flight in 2012 to meet these criteria. To improve the detectors' efficiency (66% at 15 keV for the silicon detectors) and position resolution of 75 μm for the second launch, we fabricated double-sided CdTe strip detectors with a position resolution of 60 μm and almost 100% efficiency for the FOXSI energy range. The sensitive area is 7.67 mm × 7.67 mm, corresponding to the field of view of 791'' × 791''. An energy resolution of 1 keV (FWHM) and low-energy threshold of ≈4 keV were achieved in laboratory calibrations. The second launch of FOXSI was performed on 11 December 2014, and images from the Sun were successfully obtained with the CdTe detector. Therefore, we successfully demonstrated the detector concept and the usefulness of this technique for future HXR observations of the Sun.

Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trivedi, Sudhir B; Kutcher, Susan W; Palsoz, Witold

2014-11-17

The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated.more » Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.« less

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

Integrated infrared and visible image sensors

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

2000-01-01

Semiconductor imaging devices integrating an array of visible detectors and another array of infrared detectors into a single module to simultaneously detect both the visible and infrared radiation of an input image. The visible detectors and the infrared detectors may be formed either on two separate substrates or on the same substrate by interleaving visible and infrared detectors.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1984-02-24

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, Pavel; Gatti, Emilio

1987-01-01

A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

DOEpatents

Rehak, P.; Gatti, E.

1987-08-18

A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

Nuclear Science Symposium, 21st, Scintillation and Semiconductor Counter Symposium, 14th, and Nuclear Power Systems Symposium, 6th, Washington, D.C., December 11-13, 1974, Proceedings

NASA Technical Reports Server (NTRS)

1975-01-01

Papers are presented dealing with latest advances in the design of scintillation counters, semiconductor radiation detectors, gas and position sensitive radiation detectors, and the application of these detectors in biomedicine, satellite instrumentation, and environmental and reactor instrumentation. Some of the topics covered include entopistic scintillators, neutron spectrometry by diamond detector for nuclear radiation, the spherical drift chamber for X-ray imaging applications, CdTe detectors in radioimmunoassay analysis, CAMAC and NIM systems in the space program, a closed loop threshold calibrator for pulse height discriminators, an oriented graphite X-ray diffraction telescope, design of a continuous digital-output environmental radon monitor, and the optimization of nanosecond fission ion chambers for reactor physics. Individual items are announced in this issue.

Quartz tuning fork-based photodetector for mid-infrared laser spectroscopy

NASA Astrophysics Data System (ADS)

Ding, Junya; He, Tianbo; Zhou, Sheng; Zhang, Lei; Li, Jingsong

2018-05-01

In this paper, we report a new type of photoelectric detector based on a standard quartz crystal tuning fork (QCTF) with resonant frequency of 32 kHz for spectroscopic applications. Analogous to the photoelectric effect of traditional semiconductor detectors, we utilize the piezoelectric effect of the QCTF to gauge the light intensity. To explore the capabilities of this technique, the impact of incident light beam excitation positions with respect to QCTF on signal amplitude, resonant frequency and Q factor, as well as the dependence on incident light intensity, ambient pressure and temperature, was investigated in detail. Finally, the QCTF-based photodetector was successfully demonstrated for qualitative analysis of gasoline components by combing a broadband tunable external cavity quantum cascade laser.

Development of phonon-mediated transition-edge-sensor x-ray detectors for use in astronomy

NASA Astrophysics Data System (ADS)

Leman, Steven W.

Low temperature detectors have grown in popularity over the years for a variety of reasons. Reduced thermal noise and the associated reduction in statistical fluctuations improve signal to noise. Novel material properties at low temperature such as superconductivity can be exploited. And let us not forget easier access to cryogenic techniques, for example industry made and sold refrigerators eliminating the need for graduate students to make their own. In this thesis I discuss development of a novel phonon-mediated distributed transition-edge-sensor x-ray detector which would be useful for astrophysical studies such as magnetic recombination in the solar corona, the warm-hot intergalactic medium and surveys of clusters and groups of galaxies. The detector uses a large semiconductor absorber and Transition-Edge-Sensors (TESs) to readout the absorbed energy. Calorimetry is performed on individual photons and a partitioning of the energy between various TESs allows for position determination. Hence time varying astronomical sources can be spectroscopically studied and imaged. I will conclude with a discussion of the detector's performance and propose a next generation detector which could make significant improvements on the design discussed in this thesis.

TlBr and TlBr xI 1-x crystals for γ-ray detectors

NASA Astrophysics Data System (ADS)

Churilov, Alexei V.; Ciampi, Guido; Kim, Hadong; Higgins, William M.; Cirignano, Leonard J.; Olschner, Fred; Biteman, Viktor; Minchello, Mark; Shah, Kanai S.

2010-04-01

TlBr and TlBr xI 1-x are wide bandgap semiconductor materials being investigated for applications in γ-ray spectroscopy. They have a good combination of density and atomic numbers, promising to make them very efficient detectors. Their low melting points and simple cubic and orthorhombic crystal structures are favorable for bulk crystal growth. However, these semiconductors need to be extremely pure to become useful as radiation detectors. Impurities can lead to charge trapping and scattering, reducing the charge transit lengths and limiting the detector thickness to <1 mm. Additional purification steps were implemented to improve the purity and mobility-lifetime product ( μτ) of electrons. Detector-grade TlBr with the electron μτ product of up to 6×10 -3 cm 2/V has been produced, which allowed operation of detectors up to 15 mm thickness. The ternary TlBr xI 1-x was investigated at different compositions to vary the bandgap and explore the effect of added TlI on the long term stability of detectors. The material analysis and detector characterization results are included.

Editorial

NASA Astrophysics Data System (ADS)

Bruzzi, Mara; Pace, Emanuele; Talamonti, Cinzia

2013-12-01

The 9th edition of the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices (RESMDD), held in Florence, at Dipartimento di Fisica ed Astronomia on October 9-12, 2012, was aimed at discussing frontier research activities in several application fields as in nuclear and particle physics, astrophysics, medical and solid-state physics. Main topics discussed in this conference are tracking performance of heavily irradiated silicon detectors, developments required for the luminosity upgrade of the Large Hadron Collider (HL-LHC), radiation effects on semiconductor materials for medical (radiotherapy dosimeters, imaging devices), astrophysics (UV, X- and γ-ray detectors) and environmental applications, microscopic defect analysis of irradiated semiconductor materials and related radiation hardening technologies. On the first day the conference hosted a short course intended to introduce fundamentals in the development of semiconductor detectors for medical applications to graduate and PhD students, post-docs and young researchers, both engineers and physicists. Directors of the School were Prof. Marta Bucciolini of the University of Florence and INFN, Italy and Dr. Carlo Civinini, INFN Firenze, Italy. Emphasis was placed on the underlying physical principles, instrument design, factors affecting performance, and applications in both the clinical and preclinical applications. The School was attended by nearly 40 students/ young researchers. We warmly thank the Directors for organizing this interesting event and the professors and researchers who gave lessons, for sharing their experience and knowledge with the students.

DFT Studies of Semiconductor and Scintillator Detection Materials

NASA Astrophysics Data System (ADS)

Biswas, Koushik

2013-03-01

Efficient radiation detection technology is dependent upon the development of new semiconductor and scintillator materials with advanced capabilities. First-principles based approaches can provide vital information about the structural, electrical, optical and defect properties that will help develop new materials. In addition to the predictive power of modern density functional methods, these techniques can be used to establish trends in properties that may lead to identifying new materials with optimum properties. We will discuss the properties of materials that are of current interest both in the field of scintillators and room temperature semiconductor detectors. In case of semiconductors, binary compounds such as TlBr, InI, CdTe and recently developed ternary chalcohalide Tl6SeI4 will be discussed. Tl6SeI4 mixes a halide (TlI) with a chalcogenide (Tl2Se), which results in an intermediate band gap (1.86 eV) between that of TlI (2.75 eV) and Tl2Se (0.6 eV). For scintillators, we will discuss the case of the elpasolite compounds whose rich chemical compositions should enable the fine-tuning of the band gap and band edges to achieve high light yield and fast scintillation response.

Subnanosecond Scintillation Detector

NASA Technical Reports Server (NTRS)

Hoenk, Michael (Inventor); Hennessy, John (Inventor); Hitlin, David (Inventor)

2017-01-01

A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.

Method and apparatus for electron-only radiation detectors from semiconductor materials

DOEpatents

Lund, James C.

2000-01-01

A system for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and Hgl.sub.2, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

Advances in TlBr detector development

NASA Astrophysics Data System (ADS)

Hitomi, Keitaro; Shoji, Tadayoshi; Ishii, Keizo

2013-09-01

Thallium bromide (TlBr) is a promising compound semiconductor for fabrication of gamma-ray detectors. The attractive physical properties of TlBr lie in its high photon stopping power, high resistivity and good charge transport properties. Gamma-ray detectors fabricated from TlBr crystals have exhibited excellent spectroscopic performance. In this paper, advances in TlBr radiation detector development are reviewed with emphasis on crystal growth, detector fabrication, physical properties and detector performance.

A semiconductor radiation imaging pixel detector for space radiation dosimetry.

PubMed

Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

2015-07-01

Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented. Copyright © 2015 The Committee on Space Research (COSPAR). All rights reserved.

A field-shaping multi-well avalanche detector for direct conversion amorphous selenium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldan, A. H.; Zhao, W.

2013-01-15

Purpose: A practical detector structure is proposed to achieve stable avalanche multiplication gain in direct-conversion amorphous selenium radiation detectors. Methods: The detector structure is referred to as a field-shaping multi-well avalanche detector. Stable avalanche multiplication gain is achieved by eliminating field hot spots using high-density avalanche wells with insulated walls and field-shaping inside each well. Results: The authors demonstrate the impact of high-density insulated wells and field-shaping to eliminate the formation of both field hot spots in the avalanche region and high fields at the metal-semiconductor interface. Results show a semi-Gaussian field distribution inside each well using the field-shaping electrodes,more » and the electric field at the metal-semiconductor interface can be one order-of-magnitude lower than the peak value where avalanche occurs. Conclusions: This is the first attempt to design a practical direct-conversion amorphous selenium detector with avalanche gain.« less

Induced radioactivity in the forward shielding and semiconductor tracker of the ATLAS detector.

PubMed

Bĕdajánek, I; Linhart, V; Stekl, I; Pospísil, S; Kolros, A; Kovalenko, V

2005-01-01

The radioactivity induced in the forward shielding, copper collimator and semiconductor tracker modules of the ATLAS detector has been studied. The ATLAS detector is a long-term experiment which, during operation, will require to have service and access to all of its parts and components. The radioactivity induced in the forward shielding was calculated by Monte Carlo methods based on GEANT3 software tool. The results show that the equivalent dose rates on the outer surface of the forward shielding are very low (at most 0.038 microSv h(-1)). On the other hand, the equivalent dose rates are significantly higher on the inner surface of the forward shielding (up to 661 microSv h(-1)) and, especially, at the copper collimator close to the beampipe (up to 60 mSv h(-1)). The radioactivity induced in the semiconductor tracker modules was studied experimentally. The module was activated by neutrons in a training nuclear reactor and the delayed gamma ray spectra were measured. From these measurements, the equivalent dose rate on the surface of the semiconductor tracker module was estimated to be < 100 microSv h(-1) after 100 d of Large Hadron Collider (LHC) operation and 10 d of cooling.

Novel drift structures for silicon and compound semiconductor X-ray and gamma-ray detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, B.E.; Iwanczyk, J.S.

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X-rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that the authors discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector. The main features of the silicon drift structures for X rays and light detection aremore » very small anode capacitance independent of the overall detector size, low noise, and high throughput. To take advantage of the small detector capacitance, the first stage of the electronics needs to be integrated into the detector anode. In the gamma-ray application, factors other than electronic noise dominate, and there is no need to integrate the electronics into the anode. Thus, a different drift structure is needed in conjunction with a high-Z material. The main features in this case are large active detector volume and electron-only induced signal.« less

Optical-Microwave Interactions in Semiconductor Devices.

DTIC Science & Technology

1981-03-01

Interdigital Photoconductors ( IDPC ) ......... ..... 112 G. Conclusions.. ....... .. 120 6 CONCLUSIONS AND RECOMMENDATIONS FOR FUTURE WORK . 121...The detector developed at the Hughes Research Laboratories ( IDPC ) involves placing an interdigital metal electrode 53- 5 5 structure on top of a F...easier to perform with the IDPC detector. We believe the interdigital photoconductive detector has many advantages over existing detectors. First, the

Compound semiconductor detectors for X-ray astronomy: Spectroscopic measurements and material characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bavdaz, M.; Kraft, S.; Peacock, A.

1998-12-31

The use of some specific compound semiconductors in the fabrication of high energy X-ray detectors shows significant potential for X-ray astrophysics space missions. The authors are currently investigating three high purity crystals--CdZnTe, GaAs and TlBr--as the basis for future hard X-ray detectors (above 10 keV). In this paper the authors present the first results on CdZnTe and GaAs based detectors and evaluate the factors currently still constraining the performance. Energy resolutions (FWHM) of 0.9 keV and 1.1 keV at 14 keV and 60 keV, respectively, have been obtained with an epitaxial GaAs detector, while 0.7 keV and 1.5 keV FWHMmore » were measured at the same energies with a CdZnTe detector. Based on these results it is clear, that the next generation of X-ray astrophysics missions now in the planning phase may well consider extending the photon energy range up to {approximately} 100 keV by use of efficient detectors with reasonable spectroscopic capabilities.« less

Finite Element Modeling of Micromachined MEMS Photon Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Datskos, P.G.; Evans, B.M.; Schonberger, D.

1999-09-20

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We havemore » used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.« less

Finite element modeling of micromachined MEMS photon devices

NASA Astrophysics Data System (ADS)

Evans, Boyd M., III; Schonberger, D. W.; Datskos, Panos G.

1999-09-01

The technology of microelectronics that has evolved over the past half century is one of great power and sophistication and can now be extended to many applications (MEMS and MOEMS) other than electronics. An interesting application of MEMS quantum devices is the detection of electromagnetic radiation. The operation principle of MEMS quantum devices is based on the photoinduced stress in semiconductors, and the photon detection results from the measurement of the photoinduced bending. These devices can be described as micromechanical photon detectors. In this work, we have developed a technique for simulating electronic stresses using finite element analysis. We have used our technique to model the response of micromechanical photon devices to external stimuli and compared these results with experimental data. Material properties, geometry, and bimaterial design play an important role in the performance of micromechanical photon detectors. We have modeled these effects using finite element analysis and included the effects of bimaterial thickness coating, effective length of the device, width, and thickness.

Compact Micromachined Infrared Bandpass Filters for Planetary Spectroscopy

NASA Technical Reports Server (NTRS)

Merrell, Willie C., II; Aslam, Shahid; Brown, Ari D.; Chervenak, James A.; Huang, Wei-Chung; Quijada, Manuel; Wollack, Edward

2011-01-01

The future needs of space based observational planetary and astronomy missions include low mass and small volume radiometric instruments that can operate in high radiation and low temperature environments. Here we focus on a central spectroscopic component, the bandpass filter. We model the bandpass response of the filters to target the wavelength of the resonance peaks at 20, 40, and 60 micrometers and report good agreement between the modeled and measured response. We present a technique of using common micromachining processes for semiconductor fabrication to make compact, free standing resonant metal mesh filter arrays with silicon support frames. The process can accommodate multiple detector array architectures and the silicon frame provides lightweight mechanical support with low form factor. We also present a conceptual hybridization of the filters with a detector array.

Advanced processing of CdTe pixel radiation detectors

NASA Astrophysics Data System (ADS)

Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

2017-12-01

We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

Single photon detection using Geiger mode CMOS avalanche photodiodes

NASA Astrophysics Data System (ADS)

Lawrence, William G.; Stapels, Christopher; Augustine, Frank L.; Christian, James F.

2005-10-01

Geiger mode Avalanche Photodiodes fabricated using complementary metal-oxide-semiconductor (CMOS) fabrication technology combine high sensitivity detectors with pixel-level auxiliary circuitry. Radiation Monitoring Devices has successfully implemented CMOS manufacturing techniques to develop prototype detectors with active diameters ranging from 5 to 60 microns and measured detection efficiencies of up to 60%. CMOS active quenching circuits are included in the pixel layout. The actively quenched pixels have a quenching time less than 30 ns and a maximum count rate greater than 10 MHz. The actively quenched Geiger mode avalanche photodiode (GPD) has linear response at room temperature over six orders of magnitude. When operating in Geiger mode, these GPDs act as single photon-counting detectors that produce a digital output pulse for each photon with no associated read noise. Thermoelectrically cooled detectors have less than 1 Hz dark counts. The detection efficiency, dark count rate, and after-pulsing of two different pixel designs are measured and demonstrate the differences in the device operation. Additional applications for these devices include nuclear imaging and replacement of photomultiplier tubes in dosimeters.

Calculation of the Electronic Parameters of an Al/DNA/p-Si Schottky Barrier Diode Influenced by Alpha Radiation

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Amin, Yusoff Mohd; Periasamy, Vengadesh

2015-01-01

Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors. PMID:25730484

Semiconductor P-I-N detector

DOEpatents

Sudharsanan, Rengarajan; Karam, Nasser H.

2001-01-01

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Detection of fast neutrons from shielded nuclear materials using a semiconductor alpha detector.

PubMed

Pöllänen, R; Siiskonen, T

2014-08-01

The response of a semiconductor alpha detector to fast (>1 MeV) neutrons was investigated by using measurements and simulations. A polyethylene converter was placed in front of the detector to register recoil protons generated by elastic collisions between neutrons and hydrogen nuclei of the converter. The developed prototype equipment was tested with shielded radiation sources. The low background of the detector and insensitivity to high-energy gamma rays above 1 MeV are advantages when the detection of neutron-emitting nuclear materials is of importance. In the case of a (252)Cf neutron spectrum, the intrinsic efficiency of fast neutron detection was determined to be 2.5×10(-4), whereas three-fold greater efficiency was obtained for a (241)AmBe neutron spectrum. Copyright © 2014 Elsevier Ltd. All rights reserved.

Prospects of Silicon Photomultipliers for Ground-Based Cosmic Ray Experiments

NASA Astrophysics Data System (ADS)

Peters, Christine; Bretz, Thomas; Hebbeker, Thomas; Kemp, Julian; Lauscher, Markus; Middendorf, Lukas; Niggemann, Tim; Schumacher, Johannes

An established technique to study ultra-high-energy cosmic rays is the detection of extensive air showers induced in the atmosphere of the earth. Thereby, cascades of secondary particles are produced consisting of a hadronic, an electromagnetic and a muonic component. Especially the determination of the number of muons and the amount of fluorescence light produced during the shower development allows to draw conclusions on the mass and energy of the primary particle. Thus, these are important observables for air shower experiments like for instance the Pierre Auger Observatory in Argentina, and its AugerPrime upgrade in progress. The steady development of semiconductor devices in the last years resulted in highly improved photon sensors, e.g., silicon photomultipliers (SiPMs). The small package and moderate bias voltage (<100 V) of these silicon devices allow for compact and robust designs. Detailed detector simulations, the development of dedicated front-end electronics, as well as construction and investigation of detector prototypes, are needed to study the applicability of SiPMs for cosmic ray experiments. We present our findings for two different detector techniques: First, we present the fluorescence telescope, FAMOUS. Its basic principle is based on a Fresnel lens focusing the incoming light onto a camera instrumented with 61 pixels. Secondly, the benefit of the application of SiPMs is studied for scintillator detectors designed for an improved determination of the muonic component in air showers of current experiments.

Introduction to the virtual special issue on super-resolution imaging techniques

NASA Astrophysics Data System (ADS)

Cao, Liangcai; Liu, Zhengjun

2017-12-01

Until quite recently, the resolution of optical imaging instruments, including telescopes, cameras and microscopes, was considered to be limited by the diffraction of light and by image sensors. In the past few years, many exciting super-resolution approaches have emerged that demonstrate intriguing ways to bypass the classical limit in optics and detectors. More and more research groups are engaged in the study of advanced super-resolution schemes, devices, algorithms, systems, and applications [1-6]. Super-resolution techniques involve new methods in science and engineering of optics [7,8], measurements [9,10], chemistry [11,12] and information [13,14]. Promising applications, particularly in biomedical research and semiconductor industry, have been successfully demonstrated.

Complementary barrier infrared detector (CBIRD)

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Bandara, Sumith V. (Inventor); Hill, Cory J. (Inventor); Gunapala, Sarath D. (Inventor)

2013-01-01

An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier.

Material and detector properties of cadmium manganese telluride (Cd 1-xMn xTe) crystals grown by the modified floating-zone method

DOE PAGES

Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; ...

2014-12-24

We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd 1-xMn xTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd 1-xMn xTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are freemore » from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

Can neutrino mass be deduced from beta particle spectrum?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Semkow, T.M.

1993-12-31

With 17-keV neutrino faith being uncertain, it is important to examine the effects of detector resolution and response on the detection limits of massive neutrino. The authors use Fermi theory and generate by Monte Carlo up to 5-10{sup 9} {beta}{sup {minus}} decay events from {sup 35}S. The {beta}{sup {minus}} spectra are then resolved by {chi}{sup 2} minimization. We show that given high statistics and accurate knowledge of the response function it should be possible to detect neutrino mass with a proportional detector, particularly with the gas-scintillation proportional detector, in addition to semiconductor, in addition to semiconductor detectors. This paper presentsmore » a design of double-chamber Xe gas-scintillation proportional detector in which the backscattering effects are suppressed. However, even the slight uncertainties in the response functions as well as {approximately} 10{sup {minus}3} relative energy nonlinearities in the {beta}{sup {minus}} spectrum may create an artificial effect of neutrino mass.« less

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

PubMed

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

Compositions of doped, co-doped and tri-doped semiconductor materials

DOEpatents

Lynn, Kelvin [Pullman, WA; Jones, Kelly [Colfax, WA; Ciampi, Guido [Watertown, MA

2011-12-06

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

PubMed Central

Yu, Chongqi; Wang, Hui

2010-01-01

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures. PMID:22163463

A superconducting focal plane array for ultraviolet, optical, and near-infrared astrophysics.

PubMed

Mazin, Benjamin A; Bumble, Bruce; Meeker, Seth R; O'Brien, Kieran; McHugh, Sean; Langman, Eric

2012-01-16

Microwave Kinetic Inductance Detectors, or MKIDs, have proven to be a powerful cryogenic detector technology due to their sensitivity and the ease with which they can be multiplexed into large arrays. A MKID is an energy sensor based on a photon-variable superconducting inductance in a lithographed microresonator, and is capable of functioning as a photon detector across the electromagnetic spectrum as well as a particle detector. Here we describe the first successful effort to create a photon-counting, energy-resolving ultraviolet, optical, and near infrared MKID focal plane array. These new Optical Lumped Element (OLE) MKID arrays have significant advantages over semiconductor detectors like charge coupled devices (CCDs). They can count individual photons with essentially no false counts and determine the energy and arrival time of every photon with good quantum efficiency. Their physical pixel size and maximum count rate is well matched with large telescopes. These capabilities enable powerful new astrophysical instruments usable from the ground and space. MKIDs could eventually supplant semiconductor detectors for most astronomical instrumentation, and will be useful for other disciplines such as quantum optics and biological imaging.

Basic Performance Test of a Prototype PET Scanner Using CdTe Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Ueno, Y.; Morimoto, Y.; Tsuchiya, K.; Yanagita, N.; Kojima, S.; Ishitsu, T.; Kitaguchi, H.; Kubo, N.; Zhao, S.; Tamaki, N.; Amemiya, K.

2009-02-01

A prototype positron emission tomography (PET) scanner using CdTe semiconductor detectors was developed, and its initial evaluation was conducted. The scanner was configured to form a single detector ring with six separated detector units, each having 96 detectors arranged in three detector layers. The field of view (FOV) size was 82 mm in diameter. Basic physical performance indicators of the scanner were measured through phantom studies and confirmed by rat imaging. The system-averaged energy resolution and timing resolution were 5.4% and 6.0 ns (each in FWHM) respectively. Spatial resolution measured at FOV center was 2.6 mm FWHM. Scatter fraction was measured and calculated in a National Electrical Manufacturers Association (NEMA)-fashioned manner using a 3-mm diameter hot capillary in a water-filled 80-mm diameter acrylic cylinder. The calculated result was 3.6%. Effect of depth of interaction (DOI) measurement was demonstrated by comparing hot-rod phantom images reconstructed with and without DOI information. Finally, images of a rat myocardium and an implanted tumor were visually assessed, and the imaging performance was confirmed.

Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan S.; Patt, Bradley E.

Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector tomore » substantially maximize the ratio of the signal to the electronic noise.« less

SEM observation of p-n junction in semiconductors using fountain secondary electron detector

NASA Astrophysics Data System (ADS)

Sekiguchi, Takashi; Kimura, Takashi; Iwai, Hideo

2016-11-01

When we observe a p-n junction in a certain semiconductors using scanning electron microscope, it is known that the p-type region is brighter than n-type region in secondary electron (SE) image. To clarify this origin, the p-n junctions in 4H-SiC was observed using fountain secondary electron detector (FSED). The original FSED image shows brighter p-region than n-region, which is similar to the SE image taken by Everhart-Thonley detector, mainly due to the background component of SE signal. By subtracting the background, the line profiles of FSED signal across p-n junction have been recorded according to the SE energies. These profiles may include the detailed information of p-n junction.

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.

PubMed

Du, Wei; Inokawa, Hiroshi; Satoh, Hiroaki; Ono, Atsushi

2011-08-01

In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s(-1) at room temperature, and low operation voltage of 1 V, SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved. © 2011 Optical Society of America

Hybrid organic/inorganic position-sensitive detectors based on PEDOT:PSS/n-Si

NASA Astrophysics Data System (ADS)

Javadi, Mohammad; Gholami, Mahdiyeh; Torbatiyan, Hadis; Abdi, Yaser

2018-03-01

Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (<3%), and a response correlation coefficient (>0.995) with a response time of <4 ms to the inhomogeneous IR illumination. The presented hybrid configuration also benefits from a straightforward low-temperature fabrication process. These advantages of the PEDOT:PSS/n-Si heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

Development of an ion time-of-flight spectrometer for neutron depth profiling

NASA Astrophysics Data System (ADS)

Cetiner, Mustafa Sacit

Ion time-of-flight spectrometry techniques are investigated for applicability to neutron depth profiling. Time-of-flight techniques are used extensively in a wide range of scientific and technological applications including energy and mass spectroscopy. Neutron depth profiling is a near-surface analysis technique that gives concentration distribution versus depth for certain technologically important light elements. The technique uses thermal or sub-thermal neutrons to initiate (n, p) or (n, alpha) reactions. Concentration versus depth distribution is obtained by the transformation of the energy spectrum into depth distribution by using stopping force tables of the projectiles in the substrate, and by converting the number of counts into concentration using a standard sample of known dose value. Conventionally, neutron depth profiling measurements are based on charged particle spectrometry, which employs semiconductor detectors such as a surface barrier detector (SBD) and the associated electronics. Measurements with semiconductor detectors are affected by a number of broadening mechanisms, which result from the interactions between the projectile ion and the detector material as well as fluctuations in the signal generation process. These are inherent features of the detection mechanism that involve the semiconductor detectors and cannot be avoided. Ion time-of-flight spectrometry offers highly precise measurement capabilities, particularly for slow particles. For high-energy low-mass particles, measurement resolution tends to degrade with all other parameters fixed. The threshold for more precise ion energy measurements with respect to conventional techniques, such as direct energy measurement by a surface barrier detector, is directly related to the design and operating parameters of the device. Time-of-flight spectrometry involves correlated detection of two signals by a coincidence unit. In ion time-of-flight spectroscopy, the ion generates the primary input signal. Without loss of generality, the secondary signal is obtained by the passage of the ion through a thin carbon foil, which produces ion-induced secondary electron emission (IISEE). The time-of-flight spectrometer physically acts as an ion/electron separator. The electrons that enter the active volume of the spectrometer are transported onto the microchannel plate detector to generate the secondary signal. The electron optics can be designed in variety of ways depending on the nature of the measurement and physical requirements. Two ion time-of-flight spectrometer designs are introduced: the parallel electric and magnetic (PEM) field spectrometer and the cross electric and magnetic (CEM) field spectrometer. The CEM field spectrometers have been extensively used in a wide range of applications where precise mass differentiation is required. The PEM field spectrometers have lately found interest in mass spectroscopy applications. The application of the PEM field spectrometer for energy measurements is a novel approach. The PEM field spectrometer used in the measurements employs axial electric and magnetic fields along the nominal direction of the incident ion. The secondary electrons are created by a thin carbon foil on the entrance disk and transported on the microchannel plate that faces the carbon foil. The initial angular distribution of the secondary electrons has virtually no effect on the transport time of the secondary electrons from the surface of the carbon foil to the electron microchannel plate detector. Therefore, the PEM field spectrometer can offer high-resolution energy measurement for relatively lower electric fields. The measurements with the PEM field spectrometer were made with the Tandem linear particle accelerator at the IBM T. J. Watson Research Center at Yorktown Heights, NY. The CEM field spectrometer developed for the thesis employs axial electric field along the nominal direction of the ion, and has perpendicular magnetic field. As the electric field accelerates and then decelerates the emitted secondary electron beam, the magnetic field steers the beam away from the source and focuses it onto the electron microchannel plate detector. The initial momentum distribution of the electron beam is observed to have profound effect on the electron transport time. Hence, the CEM field spectrometer measurements suffer more from spectral broadening at similar operating parameters. The CEM field spectrometer measurements were obtained with a 210Po alpha source at the Penn State Radiation Science and Engineering Center, University Park, PA. Although the PEM field spectrometer suffers less from electron transport time dispersion, the CEM field spectrometer is more suited for application to neutron depth profiling. The multiple small-diameter apertures used in the PEM field configuration considerably reduces the geometric efficiency of the spectrometer. Most of the neutron depth profiling measurements, where isotropic emission of charged particles is observed, have relatively low count rates; hence, high detection efficiency is essential.

Low Temperature Photoluminescence Characterization of Orbitally Grown CdZnTe

NASA Technical Reports Server (NTRS)

Ritter, Timothy M.; Larson, D. J.

1998-01-01

The II-VI ternary alloy CdZnTe is a technologically important material because of its use as a lattice matched substrate for HgCdTe based devices. The increasingly stringent requirements on performance that must be met by such large area infrared detectors also necessitates a higher quality substrate. Such substrate material is typically grown using the Bridgman technique. Due to the nature of bulk semiconductor growth, gravitationally dependent phenomena can adversely affect crystalline quality. The most direct way to alleviate this problem is by crystal growth in a reduced gravity environment. Since it requires hours, even days, to grow a high quality crystal, an orbiting space shuttle or space station provides a superb platform on which to conduct such research. For well over ten years NASA has been studying the effects of microgravity semiconductor crystal growth. This paper reports the results of photoluminescence characterization performed on an arbitrary grown CdZnTe bulk crystal.

Background Studies in CZT Detectors at Balloon Altitudes

NASA Astrophysics Data System (ADS)

Slavis, K. R.; Dowkontt, P. F.; Epstein, J. W.; Hink, P. L.; Matteson, J. L.; Duttweiler, F.; Huszar, G. L.; Leblanc, P. C.; Skelton, R. T.; Stephan, E. A.

1998-12-01

Cadmium Zinc Telluride (CZT) is a room temperature semiconductor detector well suited for high energy X-ray astronomy. We have developed a CZT detector with crossed strip readout, 500 micron resolution, and an advanced electrode design that greatly improves energy resolution. The latter varies from 3 keV to 6 keV FWHM over the range from 14-184 keV. We have conducted two balloon flights using this cross-strip detector and a standard planar detector sensitive in the energy range of 20-350 keV. These flights utilized a total of seven shielding schemes: 3 passive (7, 2, and 0 mm thick Pb/Sn/Cu), 2 active (NaI-CsI with 2 opening angles) and 2 hybrid passive-active. In the active shielding modes, the shield pulse heights were telemetered for each CZT event, allowing us to study the effect of shield energy-loss threshold on the background. The flights were launched from Fort Sumner, NM in October 1997 and May 1998, and had float altitudes of 109,000 and 105,000 feet respectively. Periodic energy calibrations showed the detector performance to be identical to that in the laboratory. The long duration of the May flight, 22 hours, enables us to study activation effects in the background. We present results on the effectiveness of each of the shielding schemes, activation effects and two new background reduction techniques for the strip detector. These reduction techniques employ the depth of interaction, as indicated by the ratio of cathode to anode pulse height, and multiple-site signatures to reject events that are unlikely to be X-rays incident on the detector's face. The depth of interaction technique reduces the background by a factor of 4 in the 20-40 keV energy range with passive shielding. Our preliminary results indicate a background level of 8.6x10(-3) cts/cm(2) -s-keV using passive shielding and 6x10(-4) cts/cm(2) -s-keV using active shielding in the 20-40 keV range.

Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

NASA Technical Reports Server (NTRS)

Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

1996-01-01

Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting

NASA Astrophysics Data System (ADS)

Li, Kexue; Liu, Lei; Yu, Peter Y.; Chen, Xiaobo; Shen, D. Z.

2016-05-01

By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting.

PubMed

Li, Kexue; Liu, Lei; Yu, Peter Y; Chen, Xiaobo; Shen, D Z

2016-05-11

By converting the energy of nuclear radiation to excited electrons and holes, semiconductor detectors have provided a highly efficient way for detecting them, such as photons or charged particles. However, for detecting the radiated neutrons, those conventional semiconductors hardly behave well, as few of them possess enough capability for capturing these neutral particles. While the element Gd has the highest nuclear cross section, here for searching proper neutron-detecting semiconductors, we investigate theoretically the Gd chalcogenides whose electronic band structures have never been characterized clearly. Among them, we identify that γ-phase Gd2Se3 should be the best candidate for neutron detecting since it possesses not only the right bandgap of 1.76 eV for devices working under room temperature but also the desired indirect gap nature for charge carriers surviving longer. We propose further that semiconductor neutron detectors with single-neutron sensitivity can be realized with such a Gd-chalcogenide on the condition that their crystals can be grown with good quality.

Energy straggling eliminated as a limitation to charge resolution of transmission detectors. [used for particle identification

NASA Technical Reports Server (NTRS)

Tarle, G.; Ahlen, S. P.; Price, P. B.

1981-01-01

It is pointed out that detectors of the energy loss of penetrating charged particles are widely used for particle identification. These measurements are hampered, however, by fluctuations in the amount of energy deposited within the detector. It is shown that this limitation can be overcome with a new nuclear track detector, CR-39(DOP), and that the charge resolution of this detector exceeds that of any other, including semiconductor diodes.

IR in Norway

NASA Astrophysics Data System (ADS)

Haakenaasen, Randi; Lovold, Stian

2003-01-01

Infrared technology in Norway started at the Norwegian Defense Research Establishment (FFI) in the 1960s, and has since then spread to universities, other research institutes and industry. FFI has a large, integrated IR activity that includes research and development in IR detectors, optics design, optical coatings, advanced dewar design, modelling/simulation of IR scenes, and image analysis. Part of the integrated activity is a laboratory for more basic research in materials science and semiconductor physics, in which thin films of CdHgTe are grown by molecular beam epitaxy and processed into IR detectors by various techniques. FFI also has a lot of experience in research and development of tunable infrared lasers for various applications. Norwegian industrial activities include production of infrared homing anti-ship missiles, laser rangefinders, various infrared gas sensors, hyperspectral cameras, and fiberoptic sensor systems for structural health monitoring and offshore oil well diagnostics.

Using triple gamma coincidences with a pixelated semiconductor Compton-PET scanner: a simulation study

NASA Astrophysics Data System (ADS)

Kolstein, M.; Chmeissani, M.

2016-01-01

The Voxel Imaging PET (VIP) Pathfinder project presents a novel design using pixelated semiconductor detectors for nuclear medicine applications to achieve the intrinsic image quality limits set by physics. The conceptual design can be extended to a Compton gamma camera. The use of a pixelated CdTe detector with voxel sizes of 1 × 1 × 2 mm3 guarantees optimal energy and spatial resolution. However, the limited time resolution of semiconductor detectors makes it impossible to use Time Of Flight (TOF) with VIP PET. TOF is used in order to improve the signal to noise ratio (SNR) by using only the most probable portion of the Line-Of-Response (LOR) instead of its entire length. To overcome the limitation of CdTe time resolution, we present in this article a simulation study using β+-γ emitting isotopes with a Compton-PET scanner. When the β+ annihilates with an electron it produces two gammas which produce a LOR in the PET scanner, while the additional gamma, when scattered in the scatter detector, provides a Compton cone that intersects with the aforementioned LOR. The intersection indicates, within a few mm of uncertainty along the LOR, the origin of the beta-gamma decay. Hence, one can limit the part of the LOR used by the image reconstruction algorithm.

Solid-State Neutron Detector Device

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)

2017-01-01

The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.

Preface: phys. stat. sol. (c) 1/8

NASA Astrophysics Data System (ADS)

Amann, Markus C.

2004-07-01

In this special issue of physica status solidi (c) we have included 10 invited papers reviewing the current state-of-the-art and the progress achieved in materials science, semiconductor theory, novel physical mechanisms and advanced device concepts in the field of nanostructured electronic and optoelectronic semiconductor devices. All of these papers were written by previous members of the Collaborative Research Centre 348 Nanometer-Halbleiterbauelemente: Grundlagen - Konzepte - Realisierungen (Nanometer Semiconductor Devices: Fundamentals - Concepts - Realisations), which was funded by the German Research Foundation (Deutsche Forschungsgemeinschaft, DFG) during the period from 1991 to 2003. In these twelve years, the researchers in this programme have carried an intense activity directed towards two main objectives. First of all, Fundamentals and Concepts of nanostructure devices and their technology were explored theoretically and experimentally including the effects of low-dimensional structures on carrier transport, optical properties and spin, as well as the enabling epitaxial and nanostructure technologies such as the cleaved-edge-overgrowth technique and the self-assembled growth of quantum dots. A second field of interest was focused towards the design and development of Novel Semiconductor Devices exploiting nanostructure technology. This comprises optical detectors and memories with nanometer lateral dimensions, microwave detectors and sources up to the 300 GHz regime, innovative tunable and surface-emitting semiconductor lasers for the wavelength range 0.9 to 2 m, and nitride-based resonant tunnelling diodes. Some of the device innovations have meanwhile become commercial products proving also the practical importance of this research area. The articles in this special issue relate to the projects of the last three-years' funding period from 2000 to 2003 and are organized along these two We would like to thank the numerous reviewers for their valuable comments and the editorial staff of physica status solidi (c) for their extremely helpful support. The funding by the German Research Foundation over the full project time and the continued monitoring and advice by its representatives Dr. Klaus Wehrberger and Dr. Peter Heil are gratefully acknowledged by all previous members and co-workers of this Collaborative Research Centre.

A survey of current in vivo radiotherapy dosimetry practice.

PubMed

Edwards, C R; Grieveson, M H; Mountford, P J; Rolfe, P

1997-03-01

A questionnaire was sent out to 57 radiotherapy physics departments in the United Kingdom to determine the type of dosemeters used for in vivo measurements inside and outside X-ray treatment fields, and whether any correction is made for energy dependence when the dose to critical organs outside the main beam is estimated. 44 responses were received. 11 centres used a semi-conductor for central axis dosimetry compared with only two centres which used thermoluminescent dosimetry (TLD). 37 centres carried out dosimetry measurements outside the main beam; 25 centres used TLD and 12 centres used a semi-conductor detector. Of the 16 centres measuring the dose at both sites. 11 used a semi-conductor for the central axis measurement, but only four of those 11 changed to TLD for critical organ dosimetry despite the latter's lower variation in energy response. None of the centres stated that they made a correction for the variation in detector energy response when making measurements outside the main beam, indicating a need for a more detailed evaluation of the energy response of these detectors and the energy spectra outside the main beam.

Prototype AEGIS: A Pixel-Array Readout Circuit for Gamma-Ray Imaging.

PubMed

Barber, H Bradford; Augustine, F L; Furenlid, L; Ingram, C M; Grim, G P

2005-07-31

Semiconductor detector arrays made of CdTe/CdZnTe are expected to be the main components of future high-performance, clinical nuclear medicine imaging systems. Such systems will require small pixel-pitch and much larger numbers of pixels than are available in current semiconductor-detector cameras. We describe the motivation for developing a new readout integrated circuit, AEGIS, for use in hybrid semiconductor detector arrays, that may help spur the development of future cameras. A basic design for AEGIS is presented together with results of an HSPICE ™ simulation of the performance of its unit cell. AEGIS will have a shaper-amplifier unit cell and neighbor pixel readout. Other features include the use of a single input power line with other biases generated on-board, a control register that allows digital control of all thresholds and chip configurations and an output approach that is compatible with list-mode data acquisition. An 8×8 prototype version of AEGIS is currently under development; the full AEGIS will be a 64×64 array with 300 μm pitch.

Methods for increasing the sensitivity of gamma-ray imagers

DOEpatents

Mihailescu, Lucian [Pleasanton, CA; Vetter, Kai M [Alameda, CA; Chivers, Daniel H [Fremont, CA

2012-02-07

Methods are presented that increase the position resolution and granularity of double sided segmented semiconductor detectors. These methods increase the imaging resolution capability of such detectors, either used as Compton cameras, or as position sensitive radiation detectors in imagers such as SPECT, PET, coded apertures, multi-pinhole imagers, or other spatial or temporal modulated imagers.

Systems for increasing the sensitivity of gamma-ray imagers

DOEpatents

Mihailescu, Lucian; Vetter, Kai M.; Chivers, Daniel H.

2012-12-11

Systems that increase the position resolution and granularity of double sided segmented semiconductor detectors are provided. These systems increase the imaging resolution capability of such detectors, either used as Compton cameras, or as position sensitive radiation detectors in imagers such as SPECT, PET, coded apertures, multi-pinhole imagers, or other spatial or temporal modulated imagers.

Far-Infrared Blocked Impurity Band Detector Development

NASA Technical Reports Server (NTRS)

Hogue, H. H.; Guptill, M. T.; Monson, J. C.; Stewart, J. W.; Huffman, J. E.; Mlynczak, M. G.; Abedin, M. N.

2007-01-01

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

Exploring transmission Kikuchi diffraction using a Timepix detector

NASA Astrophysics Data System (ADS)

Vespucci, S.; Winkelmann, A.; Mingard, K.; Maneuski, D.; O'Shea, V.; Trager-Cowan, C.

2017-02-01

Electron backscatter diffraction (EBSD) is a well-established scanning electron microscope (SEM)-based technique [1]. It allows the non-destructive mapping of the crystal structure, texture, crystal phase and strain with a spatial resolution of tens of nanometers. Conventionally this is performed by placing an electron sensitive screen, typically consisting of a phosphor screen combined with a charge coupled device (CCD) camera, in front of a specimen, usually tilted 70° to the normal of the exciting electron beam. Recently, a number of authors have shown that a significant increase in spatial resolution is achievable when Kikuchi diffraction patterns are acquired in transmission geometry; that is when diffraction patterns are generated by electrons transmitted through an electron-transparent, usually thinned, specimen. The resolution of this technique, called transmission Kikuchi diffraction (TKD), has been demonstrated to be better than 10 nm [2,3]. We have recently demonstrated the advantages of a direct electron detector, Timepix [4,5], for the acquisition of standard EBSD patterns [5]. In this article we will discuss the advantages of Timepix to perform TKD and for acquiring spot diffraction patterns and more generally for acquiring scanning transmission electron microscopy micrographs in the SEM. Particularly relevant for TKD, is its very compact size, which allows much more flexibility in the positioning of the detector in the SEM chamber. We will furthermore show recent results using Timepix as a virtual forward scatter detector, and will illustrate the information derivable on producing images through processing of data acquired from different areas of the detector. We will show results from samples ranging from gold nanoparticles to nitride semiconductor nanorods.

Noninvasive, near-field terahertz imaging of hidden objects using a single-pixel detector.

PubMed

Stantchev, Rayko Ivanov; Sun, Baoqing; Hornett, Sam M; Hobson, Peter A; Gibson, Graham M; Padgett, Miles J; Hendry, Euan

2016-06-01

Terahertz (THz) imaging can see through otherwise opaque materials. However, because of the long wavelengths of THz radiation (λ = 400 μm at 0.75 THz), far-field THz imaging techniques suffer from low resolution compared to visible wavelengths. We demonstrate noninvasive, near-field THz imaging with subwavelength resolution. We project a time-varying, intense (>100 μJ/cm(2)) optical pattern onto a silicon wafer, which spatially modulates the transmission of synchronous pulse of THz radiation. An unknown object is placed on the hidden side of the silicon, and the far-field THz transmission corresponding to each mask is recorded by a single-element detector. Knowledge of the patterns and of the corresponding detector signal are combined to give an image of the object. Using this technique, we image a printed circuit board on the underside of a 115-μm-thick silicon wafer with ~100-μm (λ/4) resolution. With subwavelength resolution and the inherent sensitivity to local conductivity, it is possible to detect fissures in the circuitry wiring of a few micrometers in size. THz imaging systems of this type will have other uses too, where noninvasive measurement or imaging of concealed structures is necessary, such as in semiconductor manufacturing or in ex vivo bioimaging.

Development of a 3D Brain PET Scanner Using CdTe Semiconductor Detectors and Its First Clinical Application

NASA Astrophysics Data System (ADS)

Morimoto, Y.; Ueno, Y.; Takeuchi, W.; Kojima, S.; Matsuzaki, K.; Ishitsu, T.; Umegaki, K.; Kiyanagi, Y.; Kubo, N.; Katoh, C.; Shiga, T.; Shirato, H.; Tamaki, N.

2011-10-01

Targeting improved spatial resolution, a three-dimensional positron-emission-tomography (PET) scanner employing CdTe semiconductor detectors and using depth-of-interaction (DOI) information was developed, and its physical performance was evaluated. This PET scanner is the first to use semiconductor detectors dedicated to the human brain and head-and-neck region. Imaging performance of the scanner used for 18F -fluorodeoxy glucose (FDG) scans of phantoms and human brains was evaluated. The gantry of the scanner has a 35.0-cm-diameter patient port, the trans-axial field of view (FOV) is 31.0 cm, and the axial FOV is 24.6 cm. The energy resolution averaged over all detector channels and timing resolution were 4.1% and 6.8 ns (each in FWHM), respectively. Spatial resolution measured at the center of FOV was 2.3-mm FWHM-which is one of the best resolutions achieved by human PET scanners. Noise-equivalent count ratio (NEC2R) has a maximum in the energy window of 390 to 540 keV and is 36 kcps/Bq/cm3 at 3.7 kBq/cm3 . The sensitivity of the system according to NEMA 1994 was 25.9 cps/Bq/cm3. Scatter fraction of the scanner is 37% for the energy window of 390 to 540 keV and 23% for 450 to 540 keV. Images of a hot-rod phantom and images of brain glucose metabolism show that the structural accuracy of the images obtained with the semiconductor PET scanner is higher than that possible with a conventional Bismuth Germanium Oxide (BGO) PET scanner. In addition, the developed scanner permits better delineation of the head-and-neck cancer. These results show that the semiconductor PET scanner will play a major role in the upcoming era of personalized medicine.

Medical imaging: Material change for X-ray detectors

NASA Astrophysics Data System (ADS)

Rowlands, John A.

2017-10-01

The X-ray sensitivity of radiology instruments is limited by the materials used in their detectors. A material from the perovskite family of semiconductors could allow lower doses of X-rays to be used for medical imaging. See Letter p.87

Semiconductor radiation detector

DOEpatents

Bell, Zane W.; Burger, Arnold

2010-03-30

A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes

DOEpatents

Kostenbauder, Adnah G.

1988-01-01

A photodetector for detecting signal pulses transmitted in an optical carrier signal relies on the generation of electron-hole pairs and the diffusion of the generated electrons and holes to the electrodes on the surface of the semiconductor detector body for generating photovoltaic pulses. The detector utilizes the interference of optical waves for generating an electron-hole grating within the semiconductor body, and, by establishing an electron-hole pair maximum at one electrode and a minimum at the other electrode, a detectable voltaic pulse is generated across the electrode.

Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes

DOEpatents

Kostenbauder, A.G.

1988-06-28

A photodetector for detecting signal pulses transmitted in an optical carrier signal relies on the generation of electron-hole pairs and the diffusion of the generated electrons and holes to the electrodes on the surface of the semiconductor detector body for generating photovoltaic pulses. The detector utilizes the interference of optical waves for generating an electron-hole grating within the semiconductor body, and, by establishing an electron-hole pair maximum at one electrode and a minimum at the other electrode, a detectable voltaic pulse is generated across the electrode. 4 figs.

PantherPix hybrid pixel γ-ray detector for radio-therapeutic applications

NASA Astrophysics Data System (ADS)

Neue, G.; Benka, T.; Havránek, M.; Hejtmánek, M.; Janoška, Z.; Kafka, V.; Korchak, O.; Lednický, D.; Marčišovská, M.; Marčišovský, M.; Popule, J.; Şmarhák, J.; Şvihra, P.; Tomášek, L.; Vrba, V.; Konček, O.; Semmler, M.

2018-02-01

This work focuses on the design of a semiconductor pixelated γ-ray camera with a pixel size of 1 mm2. The cost of semiconductor manufacturing is mainly driven by economies of scale, which makes silicon the cheapest semiconductor material due to its widespread utilization. The energy of γ-photons used in radiation therapy are in a range, in which the dominant interaction mechanism is Compton scattering in every conceivable sensor material. Since the Compton scattering cross section is linearly dependent upon Z, it is less rewarding to utilize high Z sensor materials, than it is in the case of X-ray detectors (X-rays interact also via the photoelectric effect whose cross section scales proportional to Zn, where n is ≈ 4,5). For the stated reasons it was decided to use the low Z material silicon (Z = 14) despite its worse detection efficiency. The proposed detector is designed as a portal detector to be used in radiation cancer therapy. The purpose of the detector is to ensure correct patient alignment, spatial dose monitoring and to provide the feedback necessary for an emergency shutdown should the spatial dose rate profile deviate from the treatment plan. Radiation therapy equipment is complex and thus failure prone and the consequences of malfunction are often life threatening. High spatial resolution and high detection efficiency are not a high design priority. The detector design priorities are focused up on radiation hardness, robustness and the ability to cover a large area cost efficiently. The quintessential idea of the PanterPix detector exploits the relaxed spatial resolution requirement to achieve the stated goals. The detector is composed of submodules, each submodule consisting of a Si sensor with an array of fully depleted detection diodes and 8 miniature custom design readout ASICs collecting and measuring the minuscule charge packets generated due to ionization in the PN junctions.

A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

PubMed

Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

2014-12-23

An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New method for binder and carbon black detection at nanometer scale in carbon electrodes for lithium ion batteries

NASA Astrophysics Data System (ADS)

Pfaffmann, Lukas; Jaiser, Stefan; Müller, Marcus; Scharfer, Philip; Schabel, Wilhelm; Bauer, Werner; Scheiba, Frieder; Ehrenberg, Helmut

2017-09-01

In the current work, graphite electrodes comprising PVDF binder and carbon black are subjected to characterization. An energy selective backscatter detector is used to localize carbon black and fluorine of PVDF. Therefore, it is necessary to distinguish between graphite, amorphous carbon and fluorine rich regions. Typically, an angular selective backscatter detector is employed to obtain an image providing the material contrast of the sample. Suitable materials for that detector are e.g. alloys to observe intermetallic phases, semiconductor for ;channeling contrast;, or imaging SiO2 and Au nanoparticles in biological cells. However, this detector cannot be used to distinguish between light elements with low atomic numbers, such as C to P. In addition, the contrast of fluorine rich regions and graphite is poor in normal in-lens images due to the low difference of the atomic mass between C and F. The aim of this study is to enhance the contrast of fluorine rich regions to graphite to carbon black. Therefore, the energy selective backscatter detector is used and its advantages and setup is described. Finally this technique is applied to investigate 400 μm thick cross-sections of graphite electrodes dried at different temperatures and obtain the carbon black distribution.

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

NASA Technical Reports Server (NTRS)

Kroupa, M.; Pinsky, L. S.; Idarraga-Munoz, J.; Hoang, S. M.; Semones, E.; Bahadori, A.; Stoffle, N.; Rios, R.; Vykydal, Z.; Jakubek, J.;

Integrated semiconductor quantum dot scintillation detector: Ultimate limit for speed and light yield

DOE PAGES

Oktyabrsky, Serge; Yakimov, Michael; Tokranov, Vadim; ...

2016-03-30

Here, a picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 10 15 cm -3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication ofmore » a semiconductor scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm 3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.« less

Frequency-dependent photothermal measurement of transverse thermal diffusivity of organic semiconductors

NASA Astrophysics Data System (ADS)

Brill, J. W.; Shahi, Maryam; Payne, Marcia M.; Edberg, Jesper; Yao, Y.; Crispin, Xavier; Anthony, J. E.

2015-12-01

We have used a photothermal technique, in which chopped light heats the front surface of a small (˜1 mm2) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid-nitrogen-cooled infrared detector. In our system, the sample is placed directly in front of the detector within its dewar. Because the detector is also sensitive to some of the incident light, which leaks around or through the sample, measurements are made for the detector signal that is in quadrature with the chopped light. Results are presented for layered crystals of semiconducting 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pn) and for papers of cellulose nanofibrils coated with semiconducting poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (NFC-PEDOT). For NFC-PEDOT, we have found that the transverse diffusivity, smaller than the in-plane value, varies inversely with thickness, suggesting that texturing of the papers varies with thickness. For TIPS-pn, we have found that the interlayer diffusivity is an order of magnitude larger than the in-plane value, consistent with previous estimates, suggesting that low-frequency optical phonons, presumably associated with librations in the TIPS side groups, carry most of the heat.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jornet, N; Carrasco de Fez, P; Jordi, O

Purpose: To evaluate the accuracy in total scatter factor (Sc,p) determination for small fields using commercial plastic scintillator detector (PSD). The manufacturer's spectral discrimination method to subtract Cerenkov light from the signal is discussed. Methods: Sc,p for field sizes ranging from 0.5 to 10 cm were measured using PSD Exradin (Standard Imaging) connected to two channel electrometer measuring the signals in two different spectral regions to subtract the Cerenkov signal from the PSD signal. A Pinpoint ionisation chamber 31006 (PTW) and a non-shielded semiconductor detector EFD (Scanditronix) were used for comparison. Measures were performed for a 6 MV X-ray beam.more » The Sc,p are measured at 10 cm depth in water for a SSD=100 cm and normalized to a 10'10 cm{sup 2} field size at the isocenter. All detectors were placed with their symmetry axis parallel to the beam axis.We followed the manufacturer's recommended calibration methodology to subtract the Cerenkov contribution to the signal as well as a modified method using smaller field sizes. The Sc,p calculated by using both calibration methodologies were compared. Results: Sc,p measured with the semiconductor and the PinPoint detectors agree, within 1.5%, for field sizes between 10'10 and 1'1 cm{sup 2}. Sc,p measured with the PSD using the manufacturer's calibration methodology were systematically 4% higher than those measured with the semiconductor detector for field sizes smaller than 5'5 cm{sup 2}. By using a modified calibration methodology for smalls fields and keeping the manufacturer calibration methodology for fields larger than 5'5cm{sup 2} field Sc,p matched semiconductor results within 2% field sizes larger than 1.5 cm. Conclusion: The calibration methodology proposed by the manufacturer is not appropriate for dose measurements in small fields. The calibration parameters are not independent of the incident radiation spectrum for this PSD. This work was partially financed by grant 2012 of Barcelona board of the AECC.« less

High field CdS detector for infrared radiation

NASA Technical Reports Server (NTRS)

Tyagi, R. C.; Boer, K. W.; Hadley, H. C.; Robertson, J. B.

1972-01-01

New and highly sensitive method of detecting infrared irradiation makes possible solid state infrared detector which is more sensitive near room temperature than usual photoconductive low band gap semiconductor devices. Reconfiguration of high field domains in cadmium sulphide crystals provides basis for discovery.

Capacitor-type micrometeoroid detectors

NASA Technical Reports Server (NTRS)

Wortman, J. J.; Griffis, D. P.; Bryan, S. R.; Kinard, W.

1986-01-01

The metal oxide semiconductor (MOS) capacitor micrometeroid detector consists of a thin dielectric capacitor fabricated on a silicon wafer. In operation, the device is charged to a voltage level sufficiently near breakdown that micrometeoroid impacts will cause dielectric deformation or heating and subsequent arc-over at the point of impact. Each detector is capable of recording multiple impacts because of the self-healing characteristics of the device. Support instrumentation requirements consist of a voltage source and pulse counters that monitor the pulse of recharging current following every impact. An investigation has been conducted in which 0.5 to 5 micron diameter carbonized iron spheres traveling at velocities of 4 to 10 Km/sec were impacted on to detectors with either a dielectric thickness of 0.4 or 1.0 micron. This study demonstrated that an ion microprobe tuned to sufficiently high resolution can detect Fe remaining on the detector after the impact. Furthermore, it is also possible to resolve Fe ion images free of mass interferences from Si, for example, giving its spatial distribution after impact. Specifically this technique has shown that significant amounts of impacting particles remain in the crater and near it which can be analyzed for isotopic content. Further testing and calibration could lead to quantitive analysis. This study has shown that the capacitor type micrometeroid detector is capable of not only time and flux measurements but can also be used for isotopic analysis.

Photoacoustic-based detector for infrared laser spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scholz, L.; Palzer, S., E-mail: stefan.palzer@imtek.uni-freiburg.de

In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number densitymore » and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2v{sub 3} band at 6046.95 cm{sup −1} using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.« less

Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

NASA Technical Reports Server (NTRS)

Su, Ching-Hua

2014-01-01

Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

Semiconductor millimeter wavelength electronics

NASA Astrophysics Data System (ADS)

Rosenbaum, F. J.

1985-12-01

This final report summarizes the results of research carried out on topics in millimeter wavelength semiconductor electronics under an ONR Selected Research Opportunity program. Study areas included III-V compound semiconductor growth and characterization, microwave and millimeter wave device modeling, fabrication and testing, and the development of new device concepts. A new millimeter wave mixer and detector, the Gap diode was invented. Topics reported on include ballistic transport, Zener oscillations, impurities in GaAs, electron velocity-electric field calculation and measurements, etc., calculations.

Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

DTIC Science & Technology

1982-05-01

semiconductor Schottky-barrier contacts are used in many semiconductor devices, including switches, rectifiers, varactors , IMPATTs, mixer and detector...ionic materials such as most of the II-VI compound semiconductors (e.g. ZnS and ZnO) and the transition-metal oxides , the barrier height is strongly...the alloying process described above is nonuniformity, due to the incomplete removal of residual surface oxides prior to the evaporation of the metal

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

NASA Astrophysics Data System (ADS)

Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

2018-04-01

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or γ rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (μe τe) of a 500 μ m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The μe τe products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average μe τe of 1.0 ṡ 10‑4 cm2V‑1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals

NASA Astrophysics Data System (ADS)

Sklyarchuk, V.; Fochuk, P.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O.; Nykoniuk, Ye.; Rybka, A.; Kutny, V.; Bolotnikov, A. E.; James, R. B.

2014-09-01

We investigated the passage of dark currents through semi-insulating crystals of Cd(Zn)Te with weak n-type conductivity that are used widely as detectors of ionizing radiation. The crystals were grown from a tellurium solution melt at 800 оС by the zone-melting method, in which a polycrystalline rod in a quartz ampoule was moved through a zone heater at a rate of 2 mm per day. The synthesis of the rod was carried out at ~1150 оС. We determined the important electro-physical parameters of this semiconductor, using techniques based on a parallel study of the temperature dependence of current-voltage characteristics in both the ohmic and the space-charge-limited current regions. We established in these crystals the relationship between the energy levels and the concentrations of deep-level impurity states, responsible for dark conductivity and their usefulness as detectors.

Temperature distribution model for the semiconductor dew point detector

NASA Astrophysics Data System (ADS)

Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

2001-08-01

The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

Germanium blocked impurity band far infrared detectors

NASA Astrophysics Data System (ADS)

Rossington, Carolyn Sally

1988-04-01

The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the Star Wars nuclear defense scheme proposed by the Reagan administration.

Tailoring light-matter coupling in semiconductor and hybrid-plasmonic nanowires

PubMed Central

Piccione, Brian; Aspetti, Carlos O.; Cho, Chang-Hee; Agarwal, Ritesh

2014-01-01

Understanding interactions between light and matter is central to many fields, providing invaluable insights into the nature of matter. In its own right, a greater understanding of light-matter coupling has allowed for the creation of tailored applications, resulting in a variety of devices such as lasers, switches, sensors, modulators, and detectors. Reduction of optical mode volume is crucial to enhancing light-matter coupling strength, and among solid-state systems, self-assembled semiconductor and hybrid-plasmonic nanowires are amenable to creation of highly-confined optical modes. Following development of unique spectroscopic techniques designed for the nanowire morphology, carefully engineered semiconductor nanowire cavities have recently been tailored to enhance light-matter coupling strength in a manner previously seen in optical microcavities. Much smaller mode volumes in tailored hybrid-plasmonic nanowires have recently allowed for similar breakthroughs, resulting in sub-picosecond excited-state lifetimes and exceptionally high radiative rate enhancement. Here, we review literature on light-matter interactions in semiconductor and hybrid-plasmonic monolithic nanowire optical cavities to highlight recent progress made in tailoring light-matter coupling strengths. Beginning with a discussion of relevant concepts from optical physics, we will discuss how our knowledge of light-matter coupling has evolved with our ability to produce ever-shrinking optical mode volumes, shifting focus from bulk materials to optical microcavities, before moving on to recent results obtained from semiconducting nanowires. PMID:25093385

Continued development of room temperature semiconductor nuclear detectors

NASA Astrophysics Data System (ADS)

Kim, Hadong; Cirignano, Leonard; Churilov, Alexei; Ciampi, Guido; Kargar, Alireza; Higgins, William; O'Dougherty, Patrick; Kim, Suyoung; Squillante, Michael R.; Shah, Kanai

2010-08-01

Thallium bromide (TlBr) and related ternary compounds, TlBrI and TlBrCl, have been under development for room temperature gamma ray spectroscopy due to several promising properties. Due to recent advances in material processing, electron mobility-lifetime product of TlBr is close to Cd(Zn)Te's value which allowed us to fabricate large working detectors. We were also able to fabricate and obtain spectroscopic results from TlBr Capacitive Frisch Grid detector and orthogonal strip detectors. In this paper we report on our recent TlBr and related ternary detector results and preliminary results from Cinnabar (HgS) detectors.

Boron selenide semiconductor detectors for thermal neutron counting

NASA Astrophysics Data System (ADS)

Kargar, Alireza; Tower, Joshua; Cirignano, Leonard; Shah, Kanai

2013-09-01

Thermal neutron detectors in planar configuration were fabricated from B2Se3 (Boron Selenide) crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. In this study, the resistivity of crystals is reported and the collected pulse height spectra are presented for devices irradiated with the 241AmBe neutron source. Long-term stability of the B2Se3 devices for neutron detection under continuous bias and without being under continuous bias was investigated and the results are reported. The B2Se3 devices showed response to thermal neutrons of the 241AmBe source.

Megavoltage imaging with a photoconductor based sensor

DOEpatents

Partain, Larry Dean [Los Altos, CA; Zentai, George [Mountain View, CA

2011-02-08

A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.

Field induced gap infrared detector

NASA Technical Reports Server (NTRS)

Elliott, C. Thomas (Inventor)

1990-01-01

A tunable infrared detector which employs a vanishing band gap semimetal material provided with an induced band gap by a magnetic field to allow intrinsic semiconductor type infrared detection capabilities is disclosed. The semimetal material may thus operate as a semiconductor type detector with a wavelength sensitivity corresponding to the induced band gap in a preferred embodiment of a diode structure. Preferred semimetal materials include Hg(1-x)Cd(x)Te, x is less than 0.15, HgCdSe, BiSb, alpha-Sn, HgMgTe, HgMnTe, HgZnTe, HgMnSe, HgMgSe, and HgZnSe. The magnetic field induces a band gap in the semimetal material proportional to the strength of the magnetic field allowing tunable detection cutoff wavelengths. For an applied magnetic field from 5 to 10 tesla, the wavelength detection cutoff will be in the range of 20 to 50 micrometers for Hg(1-x)Cd(x)Te alloys with x about 0.15. A similar approach may also be employed to generate infrared energy in a desired band gap and then operating the structure in a light emitting diode or semiconductor laser type of configuration.

Detection of X-ray spectra and images by Timepix

NASA Astrophysics Data System (ADS)

Urban, M.; Nentvich, O.; Stehlikova, V.; Sieger, L.

2017-07-01

X-ray monitoring for astrophysical applications mainly consists of two parts - optics and detector. The article describes an approach based on a combination of Lobster Eye (LE) optics with Timepix detector. Timepix is a semiconductor detector with 256 × 256 pixels on one electrode and a second electrode is common. Usage of the back-side-pulse from an common electrode of pixelated detector brings the possibility of an additional spectroscopic or trigger signal. In this article are described effects of the thermal stabilisation, and the cooling effect of the detector working as single pixel.

A feasible thermal-cycle screening system for cryogenic semiconductor components

NASA Astrophysics Data System (ADS)

Wu, Ligang; Liu, Dafu; Huang, Yimin; Zhu, Sangen; Gong, Haimei

2005-01-01

For the limit of its lifetime, the Stirling cooler is operated on the intermittent mode in satellite in some cases. Thus such cryogenic semiconductor components as HgCdTe mid or long wavelength infrared (IR) detectors are subjected to thousands of repeated thermal cycles from below -173°C to room temperature. Therefore, a series of experiments focused on quality, performance and reliability are essential in order to satisfy the reasonable requirements. Accordingly, a feasible thermal cycle screening system is put forward. And a vast experimental data show that thermal cycle tests play the most effective role in the environment stress screen (ESS). In this paper, we introduce the system to help to study the main failure mechanisms and improve the performance of the semiconductor components. Such main failure mechanisms as solder-ball invalidation encountered commonly in the detector modules, which is due to the large thermal expansion coefficient mismatch among different materials. The thermal cycle system is based on the principle of heat exchange. We expect HgCdTe IR detectors be cooled to lower than -173°C and heated to room temperature in a few minutes. Above all, we simulate the heating and cooling system through finite element method (FEM). As a result, the computations reveal that the IR detectors can be heated and cooled at a higher rate than expected. A consequent design of the entire system is founded on the simulation. At last, we adjust the mechanical structure of heat exchange system to the adaptive state to accomplish the ESS. The thermal cycle screening system includes an autocontrol part and a test part. The autocontrol part is adopted to realize the heat exchange between IR detectors and the environment, and the test one to inspect the temperature and electrical parameters of these detectors. And at least four IR detector samples can be screened at one time.

Ultra-thin enhanced-absorption long-wave infrared detectors

NASA Astrophysics Data System (ADS)

Wang, Shaohua; Yoon, Narae; Kamboj, Abhilasha; Petluru, Priyanka; Zheng, Wanhua; Wasserman, Daniel

2018-02-01

We propose an architecture for enhanced absorption in ultra-thin strained layer superlattice detectors utilizing a hybrid optical cavity design. Our detector architecture utilizes a designer-metal doped semiconductor ground plane beneath the ultra-subwavelength thickness long-wavelength infrared absorber material, upon which we pattern metallic antenna structures. We demonstrate the potential for near 50% detector absorption in absorber layers with thicknesses of approximately λ0/50, using realistic material parameters. We investigate detector absorption as a function of wavelength and incidence angle, as well as detector geometry. The proposed device architecture offers the potential for high efficiency detectors with minimal growth costs and relaxed design parameters.

Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nam, Chang-Yong; Stein, Aaron

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less

Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE PAGES

Nam, Chang-Yong; Stein, Aaron

2017-11-15

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less

Cu2I2Se6: A Metal-Inorganic Framework Wide-Bandgap Semiconductor for Photon Detection at Room Temperature.

PubMed

Lin, Wenwen; Stoumpos, Constantinos C; Kontsevoi, Oleg Y; Liu, Zhifu; He, Yihui; Das, Sanjib; Xu, Yadong; McCall, Kyle M; Wessels, Bruce W; Kanatzidis, Mercouri G

2018-02-07

Cu 2 I 2 Se 6 is a new wide-bandgap semiconductor with high stability and great potential toward hard radiation and photon detection. Cu 2 I 2 Se 6 crystallizes in the rhombohedral R3̅m space group with a density of d = 5.287 g·cm -3 and a wide bandgap E g of 1.95 eV. First-principles electronic band structure calculations at the density functional theory level indicate an indirect bandgap and a low electron effective mass m e * of 0.32. The congruently melting compound was grown in centimeter-size Cu 2 I 2 Se 6 single crystals using a vertical Bridgman method. A high electric resistivity of ∼10 12 Ω·cm is readily achieved, and detectors made of Cu 2 I 2 Se 6 single crystals demonstrate high photosensitivity to Ag Kα X-rays (22.4 keV) and show spectroscopic performance with energy resolutions under 241 Am α-particles (5.5 MeV) radiation. The electron mobility is measured by a time-of-flight technique to be ∼46 cm 2 ·V -1 ·s -1 . This value is comparable to that of one of the leading γ-ray detector materials, TlBr, and is a factor of 30 higher than mobility values obtained for amorphous Se for X-ray detection.

On the possibility of using the dynamic Franz - Keldysh effect to detect the parameters of high-power IR laser radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigor'ev, A M

2011-05-31

The increase in the absorption of light by a semiconductor (when the light photon energy is somewhat smaller than the semiconductor bandgap or equals it) in the presence of a strong light wave (for which the semiconductor is transparent) has been investigated. The possibility of designing novel light detectors for measuring the energy parameters and spatial and temporal characteristics of high-power IR laser radiation is demonstrated. (measurement of laser radiation parameters)

Uncooled infrared photon detector and multicolor infrared detection using microoptomechanical sensors

DOEpatents

Datskos, Panagiotis G.; Rajic, Solobodan; Datskou, Irene C.

1999-01-01

Systems and methods for infrared detection are described. An optomechanical photon detector includes a semiconductor material and is based on measurement of a photoinduced lattice strain. A multicolor infrared sensor includes a stack of frequency specific optomechanical detectors. The stack can include one, or more, of the optomechanical photon detectors that function based on the measurement of photoinduced lattice strain. The systems and methods provide advantages in that rapid, sensitive multicolor infrared imaging can be performed without the need for a cooling subsystem.

K-mean clustering algorithm for processing signals from compound semiconductor detectors

NASA Astrophysics Data System (ADS)

Tada, Tsutomu; Hitomi, Keitaro; Wu, Yan; Kim, Seong-Yun; Yamazaki, Hiromichi; Ishii, Keizo

2011-12-01

The K-mean clustering algorithm was employed for processing signal waveforms from TlBr detectors. The signal waveforms were classified based on its shape reflecting the charge collection process in the detector. The classified signal waveforms were processed individually to suppress the pulse height variation of signals due to the charge collection loss. The obtained energy resolution of a 137Cs spectrum measured with a 0.5 mm thick TlBr detector was 1.3% FWHM by employing 500 clusters.

Semiconductor neutron detectors

NASA Astrophysics Data System (ADS)

Gueorguiev, Andrey; Hong, Huicong; Tower, Joshua; Kim, Hadong; Cirignano, Leonard; Burger, Arnold; Shah, Kanai

2016-09-01

Lithium Indium Selenide (LiInSe2) has been under development in RMD Inc. and Fisk University for room temperature thermal neutron detection due to a number of promising properties. The recent advances of the crystal growth, material processing, and detector fabrication technologies allowed us to fabricate large detectors with 100 mm2 active area. The thermal neutron detection sensitivity and gamma rejection ratio (GRR) were comparable to 3He tube with 10 atm gas pressure at comparable dimensions. The synthesis, crystal growth, detector fabrication, and characterization are reported in this paper.

Photovoltaic radiation detector element

DOEpatents

Agouridis, Dimitrios C.

1983-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

ERIC Educational Resources Information Center

Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

2008-01-01

An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

Structured illumination diffuse optical tomography for noninvasive functional neuroimaging in mice.

PubMed

Reisman, Matthew D; Markow, Zachary E; Bauer, Adam Q; Culver, Joseph P

2017-04-01

Optical intrinsic signal (OIS) imaging has been a powerful tool for capturing functional brain hemodynamics in rodents. Recent wide field-of-view implementations of OIS have provided efficient maps of functional connectivity from spontaneous brain activity in mice. However, OIS requires scalp retraction and is limited to superficial cortical tissues. Diffuse optical tomography (DOT) techniques provide noninvasive imaging, but previous DOT systems for rodent neuroimaging have been limited either by sparse spatial sampling or by slow speed. Here, we develop a DOT system with asymmetric source-detector sampling that combines the high-density spatial sampling (0.4 mm) detection of a scientific complementary metal-oxide-semiconductor camera with the rapid (2 Hz) imaging of a few ([Formula: see text]) structured illumination (SI) patterns. Analysis techniques are developed to take advantage of the system's flexibility and optimize trade-offs among spatial sampling, imaging speed, and signal-to-noise ratio. An effective source-detector separation for the SI patterns was developed and compared with light intensity for a quantitative assessment of data quality. The light fall-off versus effective distance was also used for in situ empirical optimization of our light model. We demonstrated the feasibility of this technique by noninvasively mapping the functional response in the somatosensory cortex of the mouse following electrical stimulation of the forepaw.

Molecular breast imaging using a dedicated high-performance instrument

NASA Astrophysics Data System (ADS)

O'Connor, Michael K.; Wagenaar, Douglas; Hruska, Carrie B.; Phillips, Stephen; Caravaglia, Gina; Rhodes, Deborah

2006-08-01

In women with radiographically dense breasts, the sensitivity of mammography is less than 50%. With the increase in the percent of women with dense breasts, it is important to look at alternative screening techniques for this population. This article reviews the strengths and weaknesses of current imaging techniques and focuses on recent developments in semiconductor-based gamma camera systems that offer significant improvements in image quality over that achievable with single-crystal sodium iodide systems. We have developed a technique known as Molecular Breast Imaging (MBI) using small field of view Cadmium Zinc Telluride (CZT) gamma cameras that permits the breast to be imaged in a similar manner to mammography, using light pain-free compression. Computer simulations and experimental studies have shown that use of low-energy high sensitivity collimation coupled with the excellent energy resolution and intrinsic spatial resolution of CZT detectors provides optimum image quality for the detection of small breast lesions. Preliminary clinical studies with a prototype dual-detector system have demonstrated that Molecular Breast Imaging has a sensitivity of ~90% for the detection of breast tumors less than 10 mm in diameter. By comparison, conventional scintimammography only achieves a sensitivity of 50% in the detection of lesions < 10 mm. Because Molecular Breast Imaging is not affected by breast density, this technique may offer an important adjunct to mammography in the evaluation of women with dense breast parenchyma.

Development and characterization of high-resolution neutron pixel detectors based on Timepix read-out chips

NASA Astrophysics Data System (ADS)

Krejci, F.; Zemlicka, J.; Jakubek, J.; Dudak, J.; Vavrik, D.; Köster, U.; Atkins, D.; Kaestner, A.; Soltes, J.; Viererbl, L.; Vacik, J.; Tomandl, I.

2016-12-01

Using a suitable isotope such as 6Li and 10B semiconductor hybrid pixel detectors can be successfully adapted for position sensitive detection of thermal and cold neutrons via conversion into energetic light ions. The adapted devices then typically provides spatial resolution at the level comparable to the pixel pitch (55 μm) and sensitive area of about few cm2. In this contribution, we describe further progress in neutron imaging performance based on the development of a large-area hybrid pixel detector providing practically continuous neutron sensitive area of 71 × 57 mm2. The measurements characterising the detector performance at the cold neutron imaging instrument ICON at PSI and high-flux imaging beam-line Neutrograph at ILL are presented. At both facilities, high-resolution high-contrast neutron radiography with the newly developed detector has been successfully applied for objects which imaging were previously difficult with hybrid pixel technology (such as various composite materials, objects of cultural heritage etc.). Further, a significant improvement in the spatial resolution of neutron radiography with hybrid semiconductor pixel detector based on the fast read-out Timepix-based detector is presented. The system is equipped with a thin planar 6LiF convertor operated effectively in the event-by-event mode enabling position sensitive detection with spatial resolution better than 10 μm.

Planetary Surface Analysis Using Fast Laser Spectroscopic Techniques: Combined Microscopic Raman, LIBS, and Fluorescence Spectroscopy

NASA Astrophysics Data System (ADS)

Blacksberg, J.; Rossman, G. R.; Maruyama, Y.; Charbon, E.

2011-12-01

In situ exploration of planetary surfaces has to date required multiple techniques that, when used together, yield important information about their formation histories and evolution. We present a time-resolved laser spectroscopic technique that could potentially collect complementary sets of data providing information on mineral structure, composition, and hydration state. Using a picosecond-scale pulsed laser and a fast time-resolved detector we can simultaneously collect spectra from Raman, Laser Induced Breakdown Spectroscopy (LIBS), and fluorescence emissions that are separated in time due to the unique decay times of each process. The use of a laser with high rep rate (40 KHz) and low pulse energy (1 μJ/pulse) allows us to rapidly collect high signal to noise Raman spectra while minimizing sample damage. Increasing the pulse energy by about an order of magnitude creates a microscopic plasma near the surface and enables the collection of LIBS spectra at an unusually high rep rate and low pulse energy. Simultaneously, broader fluorescence peaks can be detected with lifetimes varying from nanosecond to microsecond. We will present Raman, LIBS, and fluorescence spectra obtained on natural mineral samples such as sulfates, clays, pyroxenes and carbonates that are of interest for Mars mineralogy. We demonstrate this technique using a photocathode-based streak camera detector as well as a newly-developed solid state Single Photon Avalanche Diode (SPAD) sensor array based on Complementary Metal-Oxide Semiconductor (CMOS) technology. We will discuss the impact of system design and detector choice on science return of a potential planetary surface mission, with a specific focus on size, weight, power, and complexity. The research described here was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration (NASA).

X-ray fluorescence imaging system for fast mapping of pigment distributions in cultural heritage paintings

NASA Astrophysics Data System (ADS)

Zielińska, A.; Dąbrowski, W.; Fiutowski, T.; Mindur, B.; Wiącek, P.; Wróbel, P.

2013-10-01

Conventional X-ray fluorescence imaging technique uses a focused X-ray beam to scan through the sample and an X-ray detector with high energy resolution but no spatial resolution. The spatial resolution of the image is then determined by the size of the exciting beam, which can be obtained either from a synchrotron source or from an X-ray tube with a micro-capillary lens. Such a technique based on a pixel-by-pixel measurement is very slow and not suitable for imaging large area samples. The goal of this work is to develop a system capable of simultaneous imaging of large area samples by using a wide field uniform excitation X-ray beam and a position sensitive and energy dispersive detector. The development is driven by possible application of such a system to imaging of distributions of hidden pigments containing specific elements in cultural heritage paintings, which is of great interest for the cultural heritage research. The fluorescence radiation from the area of 10 × 10 cm2 is projected through a pinhole camera on the Gas Electron Multiplier detector of the same area. The detector is equipped with two sets of orthogonal readout strips. The strips are read out by the GEMROC Application Specific Integrated Circuits (ASIC)s, which deliver time and amplitude information for each hit. This ASIC architecture combined with a Field Programmable Gate Array (FPGA) based readout system allows us to reconstruct the position and the total energy of each detected photon for high count rates up to 5 × 106 cps. Energy resolution better than 20% FWHM for the 5.9 keV line and spatial resolution of 1 mm FWHM have been achieved for the prototype system. Although the energy resolution of the Gas Electron Multiplier (GEM) detector is, by principle, not competitive with that of specialised high energy resolution semiconductor detectors, it is sufficient for a number of applications. Compared to conventional micro-XRF techniques the developed system allows shortening of the measurement time by 2-3 orders of magnitude.

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

NASA Astrophysics Data System (ADS)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

DOEpatents

Hansen, W.L.; Haller, E.E.

1980-09-19

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Using confidence intervals to evaluate the focus alignment of spectrograph detector arrays.

PubMed

Sawyer, Travis W; Hawkins, Kyle S; Damento, Michael

2017-06-20

High-resolution spectrographs extract detailed spectral information of a sample and are frequently used in astronomy, laser-induced breakdown spectroscopy, and Raman spectroscopy. These instruments employ dispersive elements such as prisms and diffraction gratings to spatially separate different wavelengths of light, which are then detected by a charge-coupled device (CCD) or complementary metal-oxide-semiconductor (CMOS) detector array. Precise alignment along the optical axis (focus position) of the detector array is critical to maximize the instrumental resolution; however, traditional approaches of scanning the detector through focus lack a quantitative measure of precision, limiting the repeatability and relying on one's experience. Here we propose a method to evaluate the focus alignment of spectrograph detector arrays by establishing confidence intervals to measure the alignment precision. We show that propagation of uncertainty can be used to estimate the variance in an alignment, thus providing a quantitative and repeatable means to evaluate the precision and confidence of an alignment. We test the approach by aligning the detector array of a prototype miniature echelle spectrograph. The results indicate that the procedure effectively quantifies alignment precision, enabling one to objectively determine when an alignment has reached an acceptable level. This quantitative approach also provides a foundation for further optimization, including automated alignment. Furthermore, the procedure introduced here can be extended to other alignment techniques that rely on numerically fitting data to a model, providing a general framework for evaluating the precision of alignment methods.

X-ray detectors in medical imaging

NASA Astrophysics Data System (ADS)

Spahn, Martin

2013-12-01

Healthcare systems are subject to continuous adaptation, following trends such as the change of demographic structures, the rise of life-style related and chronic diseases, and the need for efficient and outcome-oriented procedures. This also influences the design of new imaging systems as well as their components. The applications of X-ray imaging in the medical field are manifold and have led to dedicated modalities supporting specific imaging requirements, for example in computed tomography (CT), radiography, angiography, surgery or mammography, delivering projection or volumetric imaging data. Depending on the clinical needs, some X-ray systems enable diagnostic imaging while others support interventional procedures. X-ray detector design requirements for the different medical applications can vary strongly with respect to size and shape, spatial resolution, frame rates and X-ray flux, among others. Today, integrating X-ray detectors are in common use. They are predominantly based on scintillators (e.g. CsI or Gd2O2S) and arrays of photodiodes made from crystalline silicon (Si) or amorphous silicon (a-Si) or they employ semiconductors (e.g. Se) with active a-Si readout matrices. Ongoing and future developments of X-ray detectors will include optimization of current state-of-the-art integrating detectors in terms of performance and cost, will enable the usage of large size CMOS-based detectors, and may facilitate photon counting techniques with the potential to further enhance performance characteristics and foster the prospect of new clinical applications.

Pixel detectors for x-ray imaging spectroscopy in space

NASA Astrophysics Data System (ADS)

Treis, J.; Andritschke, R.; Hartmann, R.; Herrmann, S.; Holl, P.; Lauf, T.; Lechner, P.; Lutz, G.; Meidinger, N.; Porro, M.; Richter, R. H.; Schopper, F.; Soltau, H.; Strüder, L.

2009-03-01

Pixelated semiconductor detectors for X-ray imaging spectroscopy are foreseen as key components of the payload of various future space missions exploring the x-ray sky. Located on the platform of the new Spectrum-Roentgen-Gamma satellite, the eROSITA (extended Roentgen Survey with an Imaging Telescope Array) instrument will perform an imaging all-sky survey up to an X-ray energy of 10 keV with unprecedented spectral and angular resolution. The instrument will consist of seven parallel oriented mirror modules each having its own pnCCD camera in the focus. The satellite born X-ray observatory SIMBOL-X will be the first mission to use formation-flying techniques to implement an X-ray telescope with an unprecedented focal length of around 20 m. The detector instrumentation consists of separate high- and low energy detectors, a monolithic 128 × 128 DEPFET macropixel array and a pixellated CdZTe detector respectively, making energy band between 0.5 to 80 keV accessible. A similar concept is proposed for the next generation X-ray observatory IXO. Finally, the MIXS (Mercury Imaging X-ray Spectrometer) instrument on the European Mercury exploration mission BepiColombo will use DEPFET macropixel arrays together with a small X-ray telescope to perform a spatially resolved planetary XRF analysis of Mercury's crust. Here, the mission concepts and their scientific targets are briefly discussed, and the resulting requirements on the detector devices together with the implementation strategies are shown.

Spatiotemporal Monte Carlo transport methods in x-ray semiconductor detectors: application to pulse-height spectroscopy in a-Se.

PubMed

Fang, Yuan; Badal, Andreu; Allec, Nicholas; Karim, Karim S; Badano, Aldo

2012-01-01

The authors describe a detailed Monte Carlo (MC) method for the coupled transport of ionizing particles and charge carriers in amorphous selenium (a-Se) semiconductor x-ray detectors, and model the effect of statistical variations on the detected signal. A detailed transport code was developed for modeling the signal formation process in semiconductor x-ray detectors. The charge transport routines include three-dimensional spatial and temporal models of electron-hole pair transport taking into account recombination and trapping. Many electron-hole pairs are created simultaneously in bursts from energy deposition events. Carrier transport processes include drift due to external field and Coulombic interactions, and diffusion due to Brownian motion. Pulse-height spectra (PHS) have been simulated with different transport conditions for a range of monoenergetic incident x-ray energies and mammography radiation beam qualities. Two methods for calculating Swank factors from simulated PHS are shown, one using the entire PHS distribution, and the other using the photopeak. The latter ignores contributions from Compton scattering and K-fluorescence. Comparisons differ by approximately 2% between experimental measurements and simulations. The a-Se x-ray detector PHS responses simulated in this work include three-dimensional spatial and temporal transport of electron-hole pairs. These PHS were used to calculate the Swank factor and compare it with experimental measurements. The Swank factor was shown to be a function of x-ray energy and applied electric field. Trapping and recombination models are all shown to affect the Swank factor.

Degradation of electro-optic components aboard LDEF

NASA Technical Reports Server (NTRS)

Blue, M. D.

1993-01-01

Remeasurement of the properties of a set of electro-optic components exposed to the low-earth environment aboard the Long Duration Exposure Facility (LDEF) indicates that most components survived quite well. Typical components showed some effects related to the space environment unless well protected. The effects were often small but significant. Results for semiconductor infrared detectors, lasers, and LED's, as well as filters, mirrors, and black paints are described. Semiconductor detectors and emitters were scarred but reproduced their original characteristics. Spectral characteristics of multi-layer dielectric filters and mirrors were found to be altered and degraded. Increased absorption in black paints indicates an increase in absorption sites, giving rise to enhanced performance as coatings for baffles and sunscreens.

Frequency-dependent photothermal measurement of transverse thermal diffusivity of organic semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brill, J. W.; Shahi, Maryam; Yao, Y.

2015-12-21

We have used a photothermal technique, in which chopped light heats the front surface of a small (∼1 mm{sup 2}) sample and the chopping frequency dependence of thermal radiation from the back surface is measured with a liquid-nitrogen-cooled infrared detector. In our system, the sample is placed directly in front of the detector within its dewar. Because the detector is also sensitive to some of the incident light, which leaks around or through the sample, measurements are made for the detector signal that is in quadrature with the chopped light. Results are presented for layered crystals of semiconducting 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pn)more » and for papers of cellulose nanofibrils coated with semiconducting poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (NFC-PEDOT). For NFC-PEDOT, we have found that the transverse diffusivity, smaller than the in-plane value, varies inversely with thickness, suggesting that texturing of the papers varies with thickness. For TIPS-pn, we have found that the interlayer diffusivity is an order of magnitude larger than the in-plane value, consistent with previous estimates, suggesting that low-frequency optical phonons, presumably associated with librations in the TIPS side groups, carry most of the heat.« less

Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

NASA Astrophysics Data System (ADS)

Margarone, D.; Krása, J.; Giuffrida, L.; Picciotto, A.; Torrisi, L.; Nowak, T.; Musumeci, P.; Velyhan, A.; Prokůpek, J.; Láska, L.; Mocek, T.; Ullschmied, J.; Rus, B.

2011-05-01

Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

Comparison of cosmic rays radiation detectors on-board commercial jet aircraft.

PubMed

Kubančák, Ján; Ambrožová, Iva; Brabcová, Kateřina Pachnerová; Jakůbek, Jan; Kyselová, Dagmar; Ploc, Ondřej; Bemš, Július; Štěpán, Václav; Uchihori, Yukio

2015-06-01

Aircrew members and passengers are exposed to increased rates of cosmic radiation on-board commercial jet aircraft. The annual effective doses of crew members often exceed limits for public, thus it is recommended to monitor them. In general, the doses are estimated via various computer codes and in some countries also verified by measurements. This paper describes a comparison of three cosmic rays detectors, namely of the (a) HAWK Tissue Equivalent Proportional Counter; (b) Liulin semiconductor energy deposit spectrometer and (c) TIMEPIX silicon semiconductor pixel detector, exposed to radiation fields on-board commercial Czech Airlines company jet aircraft. Measurements were performed during passenger flights from Prague to Madrid, Oslo, Tbilisi, Yekaterinburg and Almaty, and back in July and August 2011. For all flights, energy deposit spectra and absorbed doses are presented. Measured absorbed dose and dose equivalent are compared with the EPCARD code calculations. Finally, the advantages and disadvantages of all detectors are discussed. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

SRAM As An Array Of Energetic-Ion Detectors

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.; Lieneweg, Udo; Nixon, Robert H.

1993-01-01

Static random-access memory (SRAM) designed for use as array of energetic-ion detectors. Exploits well-known tendency of incident energetic ions to cause bit flips in cells of electronic memories. Design of ion-detector SRAM involves modifications of standard SRAM design to increase sensitivity to ions. Device fabricated by use of conventional complementary metal oxide/semiconductor (CMOS) processes. Potential uses include gas densimetry, position sensing, and measurement of cosmic-ray spectrum.

Developing Si(Li) nuclear radiation detectors by pulsed electric field treatment

NASA Astrophysics Data System (ADS)

Muminov, R. A.; Radzhapov, S. A.; Saimbetov, A. K.

2009-08-01

Fabrication of Si(Li) nuclear radiation detectors using lithium ion drift under the action of a pulsed electric field is considered. Optimum treatment regime parameters are determined, including the pulse amplitude, duration, and repetition rate. Experimental data are presented, which show that the ion drift in a pulsed electric field decreases the semiconductor bulk compensation time by a factor of two to four and significantly increases the efficiency of detectors.

Charge carrier transport properties in thallium bromide crystalls used as radiation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olschner, F.; Toledo-Quinones, M.; Shah, K.S.

1990-06-01

Thallium bromide (TlBr) is an attractive material for use in radiation detectors because of its wide bandgap (2.68 eV) and very high atomic number. Usefulness as a semiconductor detector material, however, also requires good charge carrier transport properties in order to maximize the magnitude of the signal from the detector. The authors report on measurements of the two most important transport parameters; the mobility {mu} and the mean trapping time {tau} for electrons and holes in TlBr crystals prepared in the laboratory.

A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics

NASA Astrophysics Data System (ADS)

Zhao, Qing-Yuan; McCaughan, Adam N.; Dane, Andrew E.; Berggren, Karl K.; Ortlepp, Thomas

2017-04-01

Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.

Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lao, Y. F.; Perera, A. G. U., E-mail: uperera@gsu.edu; Center for Nano-Optics

2016-03-14

Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemission (IPE) mid-wave infrared (MWIR) photodetectors. The hole transition from the heavy-hole (HH) band to the spin-orbit split-off (SO) band has demonstrated potential applications for 3–5 μm detection without the need of cooling. However, the forbidden SO-HH transition at the Γ point (corresponding to a transition energy Δ{sub 0}, which is the split-off gap between the HH and SO bands) creates a sharp drop around 3.6 μmmore » in the spectral response of p-type GaAs/AlGaAs detectors. Here, we report a study on the optical characteristics of p-type GaAs-based semiconductors, including compressively strained InGaAs and GaAsSb, and a dilute magnetic semiconductor, GaMnAs. A model-independent fitting algorithm was used to derive the dielectric function from experimental reflection and transmission spectra. Results show that distinct absorption dip at Δ{sub 0} is observable in p-type InGaAs and GaAsSb, while GaMnAs displays enhanced absorption without degradation around Δ{sub 0}. This implies the promise of using GaMnAs to develop MWIR IPE detectors. Discussions on the optical characteristics correlating with the valence-band structure and free-hole effects are presented.« less

Lifetime Measurement of HgCdTe Semiconductor Material

DTIC Science & Technology

2012-03-01

long-wavelength (>15 μm) infrared spectral region. HgCdTe is a very effective infrared detector material because of its different properties. The...properties that make HgCdTe an effective infrared detector are its adjustable bandgap of 0.7 to 25 μm, its high absorption coefficient, its moderate... HgCdTe infrared detectors . Retrieved Jul. 17, 2011, from http://www.wat.edu.pl/review/optor/10(3)159.pdf Wagner, R. J. (1999 Apr. 16). In

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andrews, Madison Theresa; Bates, Cameron Russell; Mckigney, Edward Allen

Accurate detector modeling is a requirement to design systems in many non-proliferation scenarios; by determining a Detector’s Response Function (DRF) to incident radiation, it is possible characterize measurements of unknown sources. DRiFT is intended to post-process MCNP® output and create realistic detector spectra. Capabilities currently under development include the simulation of semiconductor, gas, and (as is discussed in this work) scintillator detector physics. Energy spectra and pulse shape discrimination (PSD) trends for incident photon and neutron radiation have been reproduced by DRiFT.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalemci, Emrah

This work summarizes the efforts in Turkey to build a laboratory capable of building and testing high energy astrophysics detectors that work in space. The EC FP6 ASTRONS project contributed strongly to these efforts, and as a result a fully operational laboratory at Sabanci University have been developed. In this laboratory we test and develop Si and CdZnTe based room temperature semiconductor strip detectors and develop detector and electronics system to be used as a payload on potential small Turkish satellites.

Strained-layer epitaxy of germanium-silicon alloys

NASA Astrophysics Data System (ADS)

Bean, J. C.

1985-10-01

Strained-layer epitaxy is presented as a developing technique for combining Si with other materials in order to obtain semiconductors with enhanced electronic properties. The method involves applying layers sufficiently thin so that the atoms deposited match the bonding configurations of the substrate crystal. When deposited on Si, a four-fold bonding pattern is retained, with a lowered interfacial energy and augmented stored strain energy in the epitaxial layer. The main problem which remains is building an epitaxial layer thick enough to yield desired epitaxial properties while avoiding a reversion to an unstrained structure. The application of a Ge layer to Si using MBE is described, along with the formation of heterojunction multi-layer superlattices, which can reduce the dislocation effects in some homojunctions. The technique shows promise for developing materials of use as bipolar transistors, optical detectors and fiber optic transmission devices.

Cross-Talk Limits of Highly Segmented Semiconductor Detectors

NASA Astrophysics Data System (ADS)

Pullia, Alberto; Weisshaar, Dirk; Zocca, Francesca; Bazzacco, Dino

2011-06-01

Cross-talk limits of monolithic highly-segmented semiconductor detectors for high-resolution X-gamma spectrometry are investigated. Cross-talk causes false signal components yielding amplitude losses and fold-dependent shifts of the spectral lines, which partially spoil the spectroscopic performance of the detector. Two complementary electrical models are developed, which describe quantitatively the inter-channel cross-talk of monolithic segmented detectors whose electrodes are read out by charge-sensitive preamplifiers. The first is here designated as Cross-Capacitance (CC) model, the second as Split-Charge (SC) model. The CC model builds around the parasitic capacitances Cij linking the preamplifier outputs and the neighbor channel inputs. The SC model builds around the finite-value of the decoupling capacitance CC used to read out the high-voltage detector electrode. The key parameters of the models are individuated and ideas are shown to minimize their impact. Using a quasi-coaxial germanium segmented detector it is found that the SC cross-talk becomes negligible for decoupling capacitances larger than 1 nF, where instead the CC cross-talk tends to dominate. The residual cross-talk may be reduced by minimization of stray capacitances Cij, through a careful design of the layout of the Printed Circuit Board (PCB) where the input transistors are mounted. Cij can be made as low as 5 fF, but it is shown that even in such case the impact of the CC cross-talk on the detector performance is not negligible. Finally, an algorithm for cross-talk correction is presented and elaborated.

European roadmap on superconductive electronics - status and perspectives

NASA Astrophysics Data System (ADS)

Anders, S.; Blamire, M. G.; Buchholz, F.-Im.; Crété, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.; Siegel, M.; Stolz, R.; Tarte, E.; ter Brake, H. J. M.; Toepfer, H.; Villegier, J.-C.; Zagoskin, A. M.; Zorin, A. B.

2010-12-01

Executive SummaryFor four decades semiconductor electronics has followed Moore’s law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ0. The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit ‘Volt’ is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many other applications SQUIDs are used as sensors for magnetic heart and brain signals in medical applications, as sensor for geological surveying and food-processing and for non-destructive testing. As amplifiers of electrical signals, SQUIDs can nearly reach the theoretical limit given by Quantum Mechanics. A further important field of application is the detection of very weak signals by ‘transition-edge’ bolometers, superconducting nanowire single-photon detectors, and superconductive tunnel junctions. Their application as radiation detectors in a wide frequency range, from microwaves to X-rays is now standard. The very low losses of superconductors have led to commercial microwave filter designs that are now widely used in the USA in base stations for cellular phones and in military communication applications. The number of demonstrated applications is continuously increasing and there is no area in professional electronics, in which superconductive electronics cannot be applied and surpasses the performance of classical devices. Superconductive electronics has to be cooled to very low temperatures. Whereas this was a bottleneck in the past, cooling techniques have made a huge step forward in recent years: very compact systems with high reliability and a wide range of cooling power are available commercially, from microcoolers of match-box size with milli-Watt cooling power to high-reliability coolers of many Watts of cooling power for satellite applications. Superconductive electronics will not replace semiconductor electronics and similar room-temperature techniques in standard applications, but for those applications which require very high speed, low-power consumption, extreme sensitivity or extremely high precision, superconductive electronics is superior to all other available techniques. To strengthen the European competitiveness in superconductor electronics research projects have to be set-up in the following field: Ultra-sensitive sensing and imaging. Quantum measurement instrumentation. Advanced analogue-to-digital converters. Superconductive electronics technology.

Laterally-Biased Quantum IR Detectors

DTIC Science & Technology

2013-10-23

Rocío San-Román, Adrián Hierro , Journal of Crystal Growth 323, (2011), 496-500. [3] Semiconductor Devices: Physics and Technology 2nd Ed., S.M. Sze...6] “Laterally biased double quantum well IR detector fabricated by MBE regrowth”, Álvaro Guzmán, Rocío San-Román, Adrián Hierro , 16th

Modifications developed to improve x-ray detection devices

NASA Technical Reports Server (NTRS)

1994-01-01

Improvements in the development of x-ray detection devices are described. Emphasis is placed on lowering the temperature in order to achieve better x-ray response. A simplified charge integrator schematic is presented along with supporting tables. By using cryogenic operating temperatures, these x-ray detectors may eventually surpass the performance of the best semiconductor detectors.

TH-CD-201-02: A Monte Carlo Investigation of a Novel Detector Arrangement for the Energy Spectrum Measurement of a 6MV Linear Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taneja, S; Bartol, L; Culberson, W

2016-06-15

Purpose: Direct measurement of the energy spectrum of a 6MV linear accelerator has not been successful due to the high fluence rate, high energy nature of these photon beams. Previous work used a Compton Scattering (CS) spectrometry setup with a shielded spectrometer for spectrum measurements. Despite substantial lead shielding, excessive pulse pile-up was seen. MCNP6 transport code was used to investigate the feasibility and effectiveness of performing measurements using a novel detector setup. Methods: Simulations were performed with a shielded high-purity germanium (HPGe) semiconductor detector placed in the accelerator vault’s maze, with a 2 cm diameter collimator through a 92more » cm thick concrete wall. The detector was positioned 660 cm from a scattering rod (placed at isocenter) at an angle of 45° relative to the central axis. This setup was compared with the shielded detector positioned in the room, 200 cm from the scattering rod at the same CS angle. Simulations were used to determine fluence contributions from three sources: (1) CS photons traveling through the collimator aperture, the intended signal, (2) CS scatter photons penetrating the detector shield, and (3) room-scattered photons penetrating the detector shield. Variance reduction techniques including weight windows, DXTRAN spheres, forced collisions, and energy cutoffs were used. Results: Simulations showed that the number of pulses per starting particle from an F8 detector tally for the intended signal decreased by a factor of 10{sup 2} when moving the detector out of the vault. This reduction in signal was amplified for the unwanted scatter signal which decreased by up to a factor of 10{sup 9}. Conclusion: This work used MCNP6 to show that using a vault wall to shield unwanted scatter and increasing isocenter-to-detector distance reduces unwanted fluence to the detector. This study aimed to provide motivation for future experimental work using the proposed setup.« less

Calibratable solid-state pressure switch

NASA Technical Reports Server (NTRS)

1969-01-01

Pressure switch, incorporating a semiconductor light-detector coupled to an electrically controlled actuating unit, provides accurate and reliable switching over a broad range of pressures and environments.

Progress towards a semiconductor Compton camera for prompt gamma imaging during proton beam therapy for range and dose verification

NASA Astrophysics Data System (ADS)

Gutierrez, A.; Baker, C.; Boston, H.; Chung, S.; Judson, D. S.; Kacperek, A.; Le Crom, B.; Moss, R.; Royle, G.; Speller, R.; Boston, A. J.

2018-01-01

The main objective of this work is to test a new semiconductor Compton camera for prompt gamma imaging. Our device is composed of three active layers: a Si(Li) detector as a scatterer and two high purity Germanium detectors as absorbers of high-energy gamma rays. We performed Monte Carlo simulations using the Geant4 toolkit to characterise the expected gamma field during proton beam therapy and have made experimental measurements of the gamma spectrum with a 60 MeV passive scattering beam irradiating a phantom. In this proceeding, we describe the status of the Compton camera and present the first preliminary measurements with radioactive sources and their corresponding reconstructed images.

Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

DOE PAGES

Johns, Paul M.; Baciak, James E.; Nino, Juan C.

2016-09-02

In some of the more attractive semiconducting compounds for ambient temperature radiation detector applications are impacted by low charge collection efficiency due to the presence of point and volumetric defects. This has been particularly true in the case of BiI 3, which features very attractive properties (density, atomic number, band gap, etc.) to serve as a gamma ray detector, but has yet to demonstrate its full potential. Here, we show that by applying growth techniques tailored to reduce defects, the spectral performance of this promising semiconductor can be realized. Gamma ray spectra from >100 keV source emissions are now obtainedmore » from high quality Sb:BiI 3 bulk crystals with limited concentrations of defects (point and extended). The spectra acquired in these high quality crystals feature photopeaks with resolution of 2.2% at 662 keV. Infrared microscopy is used to compare the local microstructure between radiation sensitive and non-responsive crystals. Our work demonstrates that BiI 3 can be prepared in melt-grown detector-grade samples with superior quality and can acquire the spectra from a variety of gamma ray sources.« less

Analysis of trace impurities in neon by a customized gas chromatography.

PubMed

Yin, Min Kyo; Lim, Jeong Sik; Moon, Dong Min; Lee, Gae Ho; Lee, Jeongsoon

2016-09-09

Excimer lasers, widely used in the semiconductor industry, are crucial for analyzing the purity of premix laser gases for the purpose of controlling stable laser output power. In this study, we designed a system for analyzing impurities in pure neon (Ne) base gas by customized GC. Impurities in pure neon (H2 and He), which cannot be analyzed at the sub-μmol/mol level using commercial GC detectors, were analyzed by a customized pulsed-discharge Ne ionization detector (PDNeD) and a pressurized injection thermal conductivity detector using Ne as the carrier gas (Pres. Inj. Ne-TCD). From the results, trace species in Ne were identified with the following detection limits: H2, 0.378μmol/mol; O2, 0.119μmol/mol; CH4, 0.880μmol/mol; CO, 0.263μmol/mol; CO2, 0.162μmol/mol (PDNeD); and He, 0.190μmol/mol (Pres. Inj. Ne-TCD). This PDNeD and pressurized injection Ne-TCD technique thus developed permit the quantification of trace impurities present in high-purity Ne. Copyright © 2016. Published by Elsevier B.V.

6.2-GHz modulated terahertz light detection using fast terahertz quantum well photodetectors.

PubMed

Li, Hua; Wan, Wen-Jian; Tan, Zhi-Yong; Fu, Zhang-Long; Wang, Hai-Xia; Zhou, Tao; Li, Zi-Ping; Wang, Chang; Guo, Xu-Guang; Cao, Jun-Cheng

2017-06-14

The fast detection of terahertz radiation is of great importance for various applications such as fast imaging, high speed communications, and spectroscopy. Most commercial products capable of sensitively responding the terahertz radiation are thermal detectors, i.e., pyroelectric sensors and bolometers. This class of terahertz detectors is normally characterized by low modulation frequency (dozens or hundreds of Hz). Here we demonstrate the first fast semiconductor-based terahertz quantum well photodetectors by carefully designing the device structure and microwave transmission line for high frequency signal extraction. Modulation response bandwidth of gigahertz level is obtained. As an example, the 6.2-GHz modulated terahertz light emitted from a Fabry-Pérot terahertz quantum cascade laser is successfully detected using the fast terahertz quantum well photodetector. In addition to the fast terahertz detection, the technique presented in this work can also be used for optically characterizing the frequency stability of terahertz quantum cascade lasers, heterodyne detections and photomixing applications.

Development of neutron/gamma generators and a polymer semiconductor detector for homeland security applications

NASA Astrophysics Data System (ADS)

King, Michael Joseph

Instrumentation development is essential to the advancement and success of homeland security systems. Active interrogation techniques that scan luggage and cargo containers for shielded special nuclear materials or explosives hold great potential in halting further terrorist attacks. The development of more economical, compact and efficient source and radiation detection devices will facilitate scanning of all containers and luggage while maintaining high-throughput and low-false alarms Innovative ion sources were developed for two novel, specialized neutron generating devices and initial generator tests were performed. In addition, a low-energy acceleration gamma generator was developed and its performance characterized. Finally, an organic semiconductor was investigated for direct fast neutron detection. A main part of the thesis work was the development of ion sources, crucial components of the neutron/gamma generator development. The use of an externally-driven radio-frequency antenna allows the ion source to generate high beam currents with high, mono-atomic species fractions while maintaining low operating pressures, advantageous parameters for neutron generators. A dual "S" shaped induction antenna was developed to satisfy the high current and large extraction area requirements of the high-intensity neutron generator. The dual antenna arrangement generated a suitable current density of 28 mA/cm2 at practical RF power levels. The stringent requirements of the Pulsed Fast Neutron Transmission Spectroscopy neutron generator necessitated the development of a specialized ten window ion source of toroidal shape with a narrow neutron production target at its center. An innovative ten antenna arrangement with parallel capacitors was developed for driving the multi-antenna arrangement and uniform coupling of RF power to all ten antennas was achieved. To address the desire for low-impact, low-radiation dose active interrogation systems, research was performed on mono-energetic gamma generators that operate at low-acceleration energies and leverage neutron generator technologies. The dissertation focused on the experimental characterization of the generator performance and involved MCNPX simulations to evaluate and analyze the experimental results. The emission of the 11.7 MeV gamma-rays was observed to be slightly anisotropic and the gamma yield was measured to be 2.0*105 gamma/s-mA. The lanthanum hexaboride target suffered beam damage from a high power density beam; however, this may be overcome by sweeping the beam across a larger target area. The efficient detection of fast neutrons is vital to active interrogation techniques for the detection of both SNM and explosives. Novel organic semiconductors are air-stable, low-cost materials that demonstrate direct electronic particle detection. As part of the development of a pi-conjugated organic polymer for fast neutron detection, charge generation and collection properties were investigated. By devising a dual, thin-film detector test arrangement, charge collection was measured for high energy protons traversing the dual detector arrangement that allowed the creation of variable track lengths by tilting the detector. The results demonstrated that an increase in track length resulted in a decreased signal collection. This can be understood by assuming charge carrier transport along the track instead of along the field lines, which was made possible by the filling of traps. However, this charge collection mechanism may be insufficient to generate a useful signal. This dissertation has explored the viability of a new generation of radiation sources and detectors, where the newly developed ion source technologies and prototype generators will further enhance the capabilities of existing threat detection systems and promote the development of cutting-edge detection technologies.

Deep-UV Emitters and Detectors Based on Lattice-Matched Cubic Oxide Semiconductors (4.2 Optoelectronics)

DTIC Science & Technology

2015-05-14

calculated   by   dividing   photo-­‐‑ generated  current  by  the  optical  power  spectrum  of  the   lamp .    A   UV ...the optimized parameters for growth. Efforts led to significant increases in solar?blind detector responsivity (up to 0.1 A/W) with sub-­ nanoamp...Aug-2014 Approved for Public Release; Distribution Unlimited Final Report: Deep- UV Emitters and Detectors Based on Lattice- Matched Cubic Oxide

Quantitative secondary electron detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Jyoti; Joy, David C.; Nayak, Subuhadarshi

Quantitative Secondary Electron Detection (QSED) using the array of solid state devices (SSD) based electron-counters enable critical dimension metrology measurements in materials such as semiconductors, nanomaterials, and biological samples (FIG. 3). Methods and devices effect a quantitative detection of secondary electrons with the array of solid state detectors comprising a number of solid state detectors. An array senses the number of secondary electrons with a plurality of solid state detectors, counting the number of secondary electrons with a time to digital converter circuit in counter mode.

Demonstration of Lasercom and Spatial Tracking with a Silicon Geiger-Mode APD Array

DTIC Science & Technology

2016-02-26

standardized pixel mask as described in the previous paragraph disabling 167 of the 1024 detectors in the array , this gives an absolute maximum rate...number of elements in an array based detector .5 In this paper, we present the results of photon-counting communication tests based on an arrayed ...semiconductor photon-counting detector .6 The array also has the ability to sense the spatial distribution of the received light giving it the potential to act

INAS hole-immobilized doping superlattice long-wave-infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1992-01-01

An approach to long-wave-infrared (LWIR) technology is discussed. The approach is based on molecular beam epitaxy (MBE) growth of hole immobilized doping superlattices in narrow band gap 3-5 semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures suitable for focal plane arrays. An LWIR detector that has high detectivity performance to wavelengths of about 16 microns at operating temperatures of 65K, where long-duration space refrigeration is plausible, is presented.

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

NASA Technical Reports Server (NTRS)

Jones, B.

1985-01-01

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

A Systematic Study of the Optical and Electrical Properties of Ge1-ySny and Ge1-x-ySixSny Semiconductor Alloys

DTIC Science & Technology

2014-03-27

efficient light sources and detectors continues to be the most significant fundamental challenge. Although there are several promising candidates, there has...not yet been a clear winner. A major challenge in the development of light sources and detectors comes from the fact that both silicon (Si) and...laser diodes), photo- detectors , and electro-optical modulators as well as biological and chemical sensors. Despite the substantial recent progress in

Semiconductor neutron detector

DOEpatents

Ianakiev, Kiril D [Los Alamos, NM; Littlewood, Peter B [Cambridge, GB; Blagoev, Krastan B [Arlington, VA; Swinhoe, Martyn T [Los Alamos, NM; Smith, James L [Los Alamos, NM; Sullivan, Clair J [Los Alamos, NM; Alexandrov, Boian S [Los Alamos, NM; Lashley, Jason Charles [Santa Fe, NM

2011-03-08

A neutron detector has a compound of lithium in a single crystal form as a neutron sensor element. The lithium compound, containing improved charge transport properties, is either lithium niobate or lithium tantalate. The sensor element is in direct contact with a monitor that detects an electric current. A signal proportional to the electric current is produced and is calibrated to indicate the neutrons sensed. The neutron detector is particularly useful for detecting neutrons in a radiation environment. Such radiation environment may, e.g. include gamma radiation and noise.

GaSe and GaTe anisotropic layered semiconductors for radiation detectors

NASA Astrophysics Data System (ADS)

Mandal, Krishna C.; Choi, Michael; Kang, Sung Hoon; Rauh, R. David; Wei, Jiuan; Zhang, Hui; Zheng, Lili; Cui, Y.; Groza, M.; Burger, A.

2007-09-01

High quality detector grade GaSe and GaTe single crystals have been grown by a modified vertical Bridgman technique using high purity Ga (7N) and in-house zone refined (ZR) precursor materials (Se and Te). A state-of-the-art computer model, MASTRAPP, is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown crystals. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The crystals harvested from ingots of 8-10 cm length and 2.5 cm diameter, have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, low temperature photoluminescence (PL), atomic force microscopy (AFM), and optical absorption/transmission measurements. Single element devices up to 1 cm2 in area have been fabricated from the crystals and tested as radiation detectors by measuring current-voltage (I-V) characteristics and pulse height spectra using 241Am source. The crystals have shown high promise as nuclear detectors with their high dark resistivity (>=10 9 Ω .cm), good charge transport properties (μτ e ~ 1.4x10 -5 cm2/V and μτ h ~ 1.5x10 -5 cm2/V), and relatively good energy resolution (~4% energy resolution at 60 keV). Details of numerical modeling and simulation, detector fabrication, and testing using a 241Am energy source (60 keV) is presented in this paper.

Selective photon counter for digital x-ray mammography tomosynthesis

NASA Astrophysics Data System (ADS)

Goldan, Amir H.; Karim, Karim S.; Rowlands, J. A.

2006-03-01

Photon counting is an emerging detection technique that is promising for mammography tomosynthesis imagers. In photon counting systems, the value of each image pixel is equal to the number of photons that interact with the detector. In this research, we introduce the design and implementation of a low noise, novel selective photon counting pixel for digital mammography tomosynthesis in crystalline silicon CMOS (complementary metal oxide semiconductor) 0.18 micron technology. The design comprises of a low noise charge amplifier (CA), two low offset voltage comparators, a decision-making unit (DMU), a mode selector, and a pseudo-random counter. Theoretical calculations and simulation results of linearity, gain, and noise of the photon counting pixel are presented.

III-V semiconductor nanoresonators-a new strategy for passive, active, and nonlinear all-dielectric metamaterials

DOE PAGES

Liu, Sheng; Keeler, Gordon A.; Reno, John L.; ...

2016-06-10

We demonstrate 2D and multilayer dielectric metamaterials made from III–V semiconductors using a monolithic fabrication process. The resulting structures could be used to recompress chirped femtosecond optical pulses and in a variety of other optical applications requiring low loss. Moreover, these III–V all-dielectric metamaterials could enable novel active applications such as efficient nonlinear frequency converters, light emitters, detectors, and modulators.

Radiation detection system

DOEpatents

Whited, R.C.

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI/sub 2/, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

International Conference on Infrared and Millimeter Waves, 16th, Ecole Polytechnique Federale de Lausanne, Switzerland, Aug. 26-30, 1991, Conference Digest

NASA Astrophysics Data System (ADS)

Siegrist, M. R.; Tran, T. M.; Tran, M. Q.

1991-10-01

Consideration is given to millimeter waves (MMW), submillimeter waves, materials properties, and gyrotrons/FEL. Particular attention is given to MMW sources, detectors and mixers; MMW systems, devices and antennas; guided propagation; high Tc superconductors; semiconductors; MMW astronomy and atmospheric physics; lasers, submillimeter devices, and plasma diagnostics; and submillimeter detectors.

Research on radiation detectors, boiling transients, and organic lubricants

NASA Technical Reports Server (NTRS)

1974-01-01

The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.

Vacuum-Ultraviolet Photovoltaic Detector.

PubMed

Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng

2018-01-23

Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

Ultrafast transient grating radiation to optical image converter

DOEpatents

Stewart, Richard E; Vernon, Stephen P; Steel, Paul T; Lowry, Mark E

2014-11-04

A high sensitivity transient grating ultrafast radiation to optical image converter is based on a fixed transmission grating adjacent to a semiconductor substrate. X-rays or optical radiation passing through the fixed transmission grating is thereby modulated and produces a small periodic variation of refractive index or transient grating in the semiconductor through carrier induced refractive index shifts. An optical or infrared probe beam tuned just below the semiconductor band gap is reflected off a high reflectivity mirror on the semiconductor so that it double passes therethrough and interacts with the radiation induced phase grating therein. A small portion of the optical beam is diffracted out of the probe beam by the radiation induced transient grating to become the converted signal that is imaged onto a detector.

Sub-micro-liter Electrochemical Single-Nucleotide-Polymorphism Detector for Lab-on-a-Chip System

NASA Astrophysics Data System (ADS)

Tanaka, Hiroyuki; Fiorini, Paolo; Peeters, Sara; Majeed, Bivragh; Sterken, Tom; de Beeck, Maaike Op; Hayashi, Miho; Yaku, Hidenobu; Yamashita, Ichiro

2012-04-01

A sub-micro-liter single-nucleotide-polymorphism (SNP) detector for lab-on-a-chip applications is developed. This detector enables a fast, sensitive, and selective SNP detection directly from human blood. The detector is fabricated on a Si substrate by a standard complementary metal oxide semiconductor/micro electro mechanical systems (CMOS/MEMS) process and Polydimethylsiloxane (PDMS) molding. Stable and reproducible measurements are obtained by implementing an on-chip Ag/AgCl electrode and encapsulating the detector. The detector senses the presence of SNPs by measuring the concentration of pyrophosphoric acid generated during selective DNA amplification. A 0.5-µL-volume detector enabled the successful performance of the typing of a SNP within the ABO gene using human blood. The measured sensitivity is 566 pA/µM.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samedov, V. V., E-mail: v-samedov@yandex.ru

Fluctuations of charge induced by charge carriers on the detector electrodes make a significant contribution to the energy resolution of ionization detectors, namely, semiconductor detectors and gas and liquid ionization chambers. These fluctuations are determined by the capture of charge carriers, as they drift in the bulk of the detector under the action of an electric field, by traps. In this study, we give a correct mathematical description of charge induction on electrodes of an ionization detector for an arbitrary electric field distribution in the detector with consideration of charge carrier capture by traps. The characteristic function obtained in thismore » study yields the general expression for the distribution function of the charge induced on the detector electrodes. The formulas obtained in this study are useful for analysis of the influence of charge carrier transport on energy resolution of ionization detectors.« less

Collisional, radiative and total electron interaction in compound semiconductor detectors and solid state nuclear track detectors: effective atomic number and electron density.

PubMed

Kurudirek, Murat; Kurudirek, Sinem V

2015-05-01

Effective atomic numbers, Zeff and electron densities, Ne are widely used for characterization of interaction processes in radiation related studies. A variety of detectors are employed to detect different types of radiations i.e. photons and charged particles. In the present work, some compound semiconductor detectors (CSCD) and solid state nuclear track detectors (SSNTD) were investigated with respect to the partial as well as total electron interactions. Zeff and Ne of the given detectors were calculated for collisional, radiative and total electron interactions in the kinetic energy region 10keV-1GeV. Maximum values of Zeff and Ne were observed at higher kinetic energies of electrons. Significant variations in Zeff and Ne up to ≈20-25% were noticed for the detectors, GaN, ZnO, Amber and CR-39 for total electron interaction. Moreover, the obtained Zeff and Ne for electrons were compared to those obtained for photons in the entire energy region. Significant variations in Zeff were also noted not only for photons (up to ≈40% for GaN) but also between photons and electrons (up to ≈60% for CR-39) especially at lower energies. Except for the lower energies, Zeff and Ne keep more or less constant values for the given materials. The energy regions where Zeff and Ne keep constant clearly show the availability of using these parameters for characterization of the materials with respect to the radiation interaction processes. Copyright © 2015 Elsevier Ltd. All rights reserved.

Dependence of energy resolution of a plane-parallel HPGe detector on bias voltage upon registration of low-energy X-rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samedov, V. V., E-mail: v-samedov@yandex.ru

2016-12-15

In this study, we theoretically analyze the processes in a plane-parallel high-purity germanium (HPGe) detector. The generating function of factorial moments describing the process of registration of low-energy X-rays by the HPGe detector with consideration of capture of charge carriers by traps is obtained. It is demonstrated that the coefficients of expansion of the average signal amplitude and variance in power series over the quantity inversely proportional to the bias voltage of the detector allow one to determine the Fano factor, the product of the charge carrier lifetime and mobility, and other characteristics of the semiconductor material of the detector.

Evaluation of clinical use of OneDose™ metal oxide semiconductor field-effect transistor detectors compared to thermoluminescent dosimeters to measure skin dose for adult patients with acute lymphoblastic leukemia

PubMed Central

Al-Mohammed, Huda Ibrahim

2011-01-01

Background: Total body irradiation is a protocol used to treat acute lymphoblastic leukemia in patients prior to their bone marrow transplant. It involves the treatment of the whole body using a large radiation field with extended source-skin distance. Therefore, it is important to measure and monitor the skin dose during the treatment. Thermoluminescent dosimeters (TLDs) and the OneDose™ metal oxide semiconductor field effect transistor (MOSFET) detectors are used during treatment delivery to measure the radiation dose and compare it with the target prescribed dose. Aims: The primary goal of this study was to measure the variation of skin dose using OneDose MOSFET detectors and TLD detectors, and compare the results with the target prescribed dose. The secondary aim was to evaluate the simplicity of use and determine if one system was superior to the other in clinical use. Material and Methods: The measurements involved twelve adult patients diagnosed with acute lymphoblastic leukemia. TLD and OneDose MOSFET dosimetry were performed at ten different anatomical sites of each patient. Results: The results showed that there was a variation between skin dose measured with OneDose MOSFET detectors and TLD in all patients. However, the variation was not significant. Furthermore, the results showed for every anatomical site there was no significant different between the prescribed dose and the dose measured by either TLD or OneDose MOSFET detectors. Conclusion: There were no significant differences between the OneDose MOSFET and TLDs in comparison to the target prescribed dose. However, OneDose MOSFET detectors give a direct read-out immediately after the treatment, and their simplicity of use to compare with TLD detectors may make them preferred for clinical use. PMID:22171243

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

NASA Astrophysics Data System (ADS)

Khorsandi, Behrooz

There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

The Si/CdTe semiconductor camera of the ASTRO-H Hard X-ray Imager (HXI)

NASA Astrophysics Data System (ADS)

Sato, Goro; Hagino, Kouichi; Watanabe, Shin; Genba, Kei; Harayama, Atsushi; Kanematsu, Hironori; Kataoka, Jun; Katsuragawa, Miho; Kawaharada, Madoka; Kobayashi, Shogo; Kokubun, Motohide; Kuroda, Yoshikatsu; Makishima, Kazuo; Masukawa, Kazunori; Mimura, Taketo; Miyake, Katsuma; Murakami, Hiroaki; Nakano, Toshio; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Onishi, Mitsunobu; Saito, Shinya; Sato, Rie; Sato, Tamotsu; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shin`ichiro; Yuasa, Takayuki

2016-09-01

The Hard X-ray Imager (HXI) is one of the instruments onboard the ASTRO-H mission [1-4] to be launched in early 2016. The HXI is the focal plane detector of the hard X-ray reflecting telescope that covers an energy range from 5 to 80 keV. It will execute observations of astronomical objects with a sensitivity for point sources as faint as 1/100,000 of the Crab nebula at > 10 keV. The HXI camera - the imaging part of the HXI - is realized by a hybrid semiconductor detector system that consists of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. Here, we present the final design of the HXI camera and report on the development of the flight model. The camera is composed of four layers of Double-sided Silicon Strip Detectors (DSSDs) and one layer of CdTe Double-sided Strip Detector (CdTe-DSD), each with an imaging area of 32 mm×32 mm. The strip pitch of the Si and CdTe sensors is 250 μm, and the signals from all 1280 strips are processed by 40 Application Specified Integrated Circuits (ASICs) developed for the HXI. The five layers of sensors are vertically stacked with a 4 mm spacing to increase the detection efficiency. The thickness of the sensors is 0.5 mm for the Si, and 0.75 mm for the CdTe. In this configuration, soft X-ray photons will be absorbed in the Si part, while hard X-ray photons will go through the Si part and will be detected in the CdTe part. The design of the sensor trays, peripheral circuits, power connections, and readout schemes are also described. The flight models of the HXI camera have been manufactured, tested and installed in the HXI instrument and then on the satellite.

Pulse shaping system research of CdZnTe radiation detector for high energy x-ray diagnostic

NASA Astrophysics Data System (ADS)

Li, Miao; Zhao, Mingkun; Ding, Keyu; Zhou, Shousen; Zhou, Benjie

2018-02-01

As one of the typical wide band-gap semiconductor materials, the CdZnTe material has high detection efficiency and excellent energy resolution for the hard X-ray and the Gamma ray. The generated signal of the CdZnTe detector needs to be transformed to the pseudo-Gaussian pulse with a small impulse-width to remove noise and improve the energy resolution by the following nuclear spectrometry data acquisition system. In this paper, the multi-stage pseudo-Gaussian shaping-filter has been investigated based on the nuclear electronic principle. The optimized circuit parameters were also obtained based on the analysis of the characteristics of the pseudo-Gaussian shaping-filter in our following simulations. Based on the simulation results, the falling-time of the output pulse was decreased and faster response time can be obtained with decreasing shaping-time τs-k. And the undershoot was also removed when the ratio of input resistors was set to 1 to 2.5. Moreover, a two stage sallen-key Gaussian shaping-filter was designed and fabricated by using a low-noise voltage feedback operation amplifier LMH6628. A detection experiment platform had been built by using the precise pulse generator CAKE831 as the imitated radiation pulse which was equivalent signal of the semiconductor CdZnTe detector. Experiment results show that the output pulse of the two stage pseudo-Gaussian shaping filter has minimum 200ns pulse width (FWHM), and the output pulse of each stage was well consistent with the simulation results. Based on the performance in our experiment, this multi-stage pseudo-Gaussian shaping-filter can reduce the event-lost caused by pile-up in the CdZnTe semiconductor detector and improve the energy resolution effectively.

High-Performance Thermoelectric Semiconductors

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre; Caillat, Thierry; Borshchevsky, Alexander

1994-01-01

Figures of merit almost double current state-of-art thermoelectric materials. IrSb3 is semiconductor found to exhibit exceptional thermoelectric properties. CoSb3 and RhSb3 have same skutterudite crystallographic structure as IrSb3, and exhibit exceptional transport properties expected to contribute to high thermoelectric performance. These three compounds form solid solutions. Combination of properties offers potential for development of new high-performance thermoelectric materials for more efficient thermoelectric power generators, coolers, and detectors.

One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

PubMed Central

2009-01-01

The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities. PMID:20596452

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rau, E. I.; Orlikovskiy, N. A.; Ivanova, E. S.

A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1-50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

NASA Astrophysics Data System (ADS)

Obraztsova, O.; Ottaviani, L.; Klix, A.; Döring, T.; Palais, O.; Lyoussi, A.

2018-01-01

Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm·K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm·K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond detectors irradiated with 14 MeV neutrons at room temperature.

Theoretical consideration of the energy resolution in planar HPGe detectors for low energy X-rays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samedov, Victor V.

In this work, theoretical consideration of the processes in planar High Purity Ge (HPGe) detectors for low energy X-rays using the random stochastic processes formalism was carried out. Using the random stochastic processes formalism, the generating function of the processes of X-rays registration in a planar HPGe detector was derived. The power serial expansions of the detector amplitude and the variance in terms of the inverse bias voltage were derived. The coefficients of these expansions allow determining the Fano factor, electron mobility lifetime product, nonuniformity of the trap density, and other characteristics of the semiconductor material. (authors)

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

NASA Astrophysics Data System (ADS)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

Analysis of painted arts by energy sensitive radiographic techniques with the Pixel Detector Timepix

NASA Astrophysics Data System (ADS)

Zemlicka, J.; Jakubek, J.; Kroupa, M.; Hradil, D.; Hradilova, J.; Mislerova, H.

2011-01-01

Non-invasive techniques utilizing X-ray radiation offer a significant advantage in scientific investigations of painted arts and other cultural artefacts such as painted artworks or statues. In addition, there is also great demand for a mobile analytical and real-time imaging device given the fact that many fine arts cannot be transported. The highly sensitive hybrid semiconductor pixel detector, Timepix, is capable of detecting and resolving subtle and low-contrast differences in the inner composition of a wide variety of objects. Moreover, it is able to map the surface distribution of the contained elements. Several transmission and emission techniques are presented which have been proposed and tested for the analysis of painted artworks. This study focuses on the novel techniques of X-ray transmission radiography (conventional and energy sensitive) and X-ray induced fluorescence imaging (XRF) which can be realised at the table-top scale with the state-of-the-art pixel detector Timepix. Transmission radiography analyses the changes in the X-ray beam intensity caused by specific attenuation of different components in the sample. The conventional approach uses all energies from the source spectrum for the creation of the image while the energy sensitive alternative creates images in given energy intervals which enable identification and separation of materials. The XRF setup is based on the detection of characteristic radiation induced by X-ray photons through a pinhole geometry collimator. The XRF method is extremely sensitive to the material composition but it creates only surface maps of the elemental distribution. For the purpose of the analysis several sets of painted layers have been prepared in a restoration laboratory. The composition of these layers corresponds to those of real historical paintings from the 19th century. An overview of the current status of our methods will be given with respect to the instrumentation and the application in the field of cultural heritage.

Read-noise characterization of focal plane array detectors via mean-variance analysis.

PubMed

Sperline, R P; Knight, A K; Gresham, C A; Koppenaal, D W; Hieftje, G M; Denton, M B

2005-11-01

Mean-variance analysis is described as a method for characterization of the read-noise and gain of focal plane array (FPA) detectors, including charge-coupled devices (CCDs), charge-injection devices (CIDs), and complementary metal-oxide-semiconductor (CMOS) multiplexers (infrared arrays). Practical FPA detector characterization is outlined. The nondestructive readout capability available in some CIDs and FPA devices is discussed as a means for signal-to-noise ratio improvement. Derivations of the equations are fully presented to unify understanding of this method by the spectroscopic community.

Hot Electron Emission in Semiconductors.

DTIC Science & Technology

1988-03-25

applied electric field and calculated for each detector according to U = fIRMA I(, (1)U R(w)A(w)IBB(wTe) "dw I0 BB e where R() = R0 r(w) and A(w) = A a...the spectrum of the stimulated emis- magnetic field tunable GaAs detector was used for the de - ,’i. sion from p-Ge by means of an extremely narrowband...crossed electric and magnetic fields is studied by means of a tunable narrow- band GaAs- detector . A multimode spectrum is observed from polished high

Design of fire detection equipment based on ultraviolet detection technology

NASA Astrophysics Data System (ADS)

Liu, Zhenji; Liu, Jin; Chu, Sheng; Ping, Chao; Yuan, Xiaobing

2015-03-01

Utilized the feature of wide bandgap semiconductor of MgZnO, researched and developed a kind of Mid-Ultraviolet-Band(MUV) ultraviolet detector which has passed the simulation experiment in the sun circumstance. Based on the ultraviolet detector, it gives out a design scheme of gun-shot detection device, which is composed of twelve ultraviolet detectors, signal amplifier, processor, annunciator , azimuth indicator and the bracket. Through Analysing the feature of solar blind, ultraviolet responsivity, fire feature of gunshots and detection distance, the feasibility of this design scheme is proved.

Mid-infrared two photon absorption sensitivity of commercial detectors

NASA Astrophysics Data System (ADS)

Boiko, D. L.; Antonov, A. V.; Kuritsyn, D. I.; Yablonskiy, A. N.; Sergeev, S. M.; Orlova, E. E.; Vaks, V. V.

2017-10-01

We report on broad-band two-photon absorption (TPA) in several commercially available MIR inter-band bulk semiconductor photodetectors with the spectral cutoff in the range of 4.5-6 μm. The highest TPA responsivity of 2 × 10-5 A.mm2/W2 is measured for a nitrogen-cooled InSb photovoltaic detector. Its performance as a two-photon detector is validated by measuring the second-order interferometric autocorrelation function of a multimode quantum cascade laser emitting at the wavelength of 8 μm.

Mid-Infrared Tunable Resonant Cavity Enhanced Detectors

PubMed Central

Quack, Niels; Blunier, Stefan; Dual, Jurg; Felder, Ferdinand; Arnold, Martin; Zogg, Hans

2008-01-01

Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED) principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the cavity length thus shifting the resonances where the detector is sensitive. Using electrostatically actuated MEMS micromirrors, a very compact tunable detector system has been fabricated. Mirror movements of more than 3 μm at 30V are obtained. With these mirrors, detectors with a wavelength tuning range of about 0.7 μm have been realized. Single detectors can be used in mid-infrared micro spectrometers, while a detector arrangement in an array makes it possible to realize Adaptive Focal Plane Arrays (AFPA). PMID:27873824

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1973-01-01

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Concept Doped-Silicon Thermopile Detectors for Future Planetary Thermal Imaging Instruments

NASA Astrophysics Data System (ADS)

Lakew, Brook; Barrentine, Emily M.; Aslam, Shahid; Brown, Ari D.

2016-10-01

Presently, uncooled thermopiles are the detectors of choice for thermal mapping in the 4.6-100 μm spectral range. Although cooled detectors like Ge or Si thermistor bolometers, and MgB2 or YBCO superconducting bolometers, have much higher sensitivity, the required active or passive cooling mechanisms add prohibitive cost and mass for long duration missions. Other uncooled detectors, likepyroelectrics, require a motor mechanism to chop against a known reference temperature, which adds unnecessary mission risk. Uncooled vanadium oxide or amorphous Si microbolometer arrays with integrated CMOS readout circuits, not only have lower sensitivity, but also have not been proven to be radiation hard >100 krad (Si) total ionizing dose, and barring additional materials and readout development, their performance has reached a plateau.Uncooled and radiation hard thermopiles with D* ~1x109 cm√Hz/W and time constant τ ~100 ms have been integrated into thermal imaging instruments on several past missions and have extensive flight heritage (Mariner, Voyager, Cassini, LRO, MRO). Thermopile arrays are also on the MERTIS instrument payload on-board the soon to be launched BepiColombo Mission.To date, thermopiles used for spaceflight instrumentation have consisted of either hand assembled "one-off" single thermopile pixels or COTS thermopile pixel arrays both using Bi-Sb or Bi-Te thermoelectric materials. For future high performance imagers, thermal detector arrays with higher D*, lower τ, and high efficiency delineated absorbers are desirable. Existing COTS and other flight thermopile designs require highly specialized and nonstandard processing techniques to fabricate both the Bi-Sb or Bi-Te thermocouples and the gold or silver black absorbers, which put limitations on further development.Our detector arrays will have a D* ≥ 3x109 cm√Hz/W and a thermal time constant ≤ 30 ms at 170 K. They will be produced using proven, standard semiconductor and MEMS fabrication techniques, which will enable the future integration of other ancillary structures like high efficiency broadband absorbers, which will result in D* ≥ 5x109 cm√Hz/W.

DQE simulation of a-Se x-ray detectors using ARTEMIS

NASA Astrophysics Data System (ADS)

Fang, Yuan; Badano, Aldo

2016-03-01

Detective Quantum Efficiency (DQE) is one of the most important image quality metrics for evaluating the spatial resolution performance of flat-panel x-ray detectors. In this work, we simulate the DQE of amorphous selenium (a-Se) xray detectors with a detailed Monte Carlo transport code (ARTEMIS) for modeling semiconductor-based direct x-ray detectors. The transport of electron-hole pairs is achieved with a spatiotemporal model that accounts for recombination and trapping of carriers and Coulombic effects of space charge and external applied electric field. A range of x-ray energies has been simulated from 10 to 100 keV. The DQE results can be used to study the spatial resolution characteristics of detectors at different energies.

Single photon detection with self-quenching multiplication

NASA Technical Reports Server (NTRS)

Zheng, Xinyu (Inventor); Cunningham, Thomas J. (Inventor); Pain, Bedabrata (Inventor)

2011-01-01

A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.

Novel Chalcogenide Materials for x ray and Gamma ray Detection

DTIC Science & Technology

2016-05-01

REPORT OF PROJECT: Novel chalcogenide materials for x - ray and - ray detection HDTRA1-09-1-0044 Mercouri Kanatzidis , PI Northwestern University...investigated semiconductor for hard radiation detection. The μτ products for electrons however are lower than those of CZT, the leading material for X - ray ...Formation of native defects in the gamma- ray detector material, Cs2Hg6S7 Semiconductor devices detecting hard radiation such as x - rays and

Wide Bandgap Semiconductor Detector Optimization for Flash X-Ray Measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roecker, Caleb Daniel; Schirato, Richard C.

2017-11-17

Charge trapping, resulting in a decreased and spatially dependent electric field, has long been a concern for wide bandgap semiconductor detectors. While significant work has been performed to characterize this degradation at varying temperatures and radiation environments, this work concentrates upon examining the event-to-event response in a flash X-ray environment. The following work investigates if charge trapping is a problem for CZT detectors, with particular emphasis on flash X-ray radiation fields at cold temperatures. Results are compared to a non-flash radiation field, using an Am-241 alpha source and similar temperature transitions. Our ability to determine if a response change occurredmore » was hampered by the repeatability of our flash X-ray systems; a small response change was observed with the Am-241 source. Due to contrast of these results, we are in the process of revisiting the Am-241 measurements in the presence of a high radiation environment. If the response change is more pronounced in the high radiation environment, a similar test will be performed in the flash X-ray environment.« less

Use of GaN as a Scintillating Ionizing Radiation Detector

NASA Astrophysics Data System (ADS)

Wensman, Johnathan; Guardala, Noel; Mathur, Veerendra; Alasagas, Leslie; Vanhoy, Jeffrey; Statham, John; Marron, Daniel; Millett, Marshall; Marsh, Jarrod; Currie, John; Price, Jack

2017-09-01

Gallium nitride (GaN) is a III/V direct bandgap semiconductor which has been used in light emitting diodes (LEDs) since the 1990s. Currently, due to a potential for increased efficiency, GaN is being investigated as a replacement for silicon in power electronics finding potential uses ranging from data centers to electric vehicles. In addition to LEDs and power electronics though, doped GaN can be used as a gamma insensitive fast neutron detector due to the direct band-gap, light propagation properties, and response to ionizing radiations. Investigation of GaN as a semiconductor scintillator for use in a radiation detection system involves mapping the response function of the detector crystal over a range of photon and neutron energies, and measurements of light generation in the GaN crystal due to proton, alpha, and nitrogen projectiles. In this presentation we discuss the measurements made to date, and plausible interpretations of the response functions. This work funded in part by the Naval Surface Warfare Center, Carderock Division In-house Laboratory Independent Research program.

Fast front-end electronics for semiconductor tracking detectors: Trends and perspectives

NASA Astrophysics Data System (ADS)

Rivetti, Angelo

2014-11-01

In the past few years, extensive research efforts pursued by both the industry and the academia have lead to major improvements in the performance of Analog to Digital Converters (ADCs) and Time to Digital Converters (TDCs). ADCs achieving 8-10 bit resolution, 50-100 MHz conversion frequency and less than 1 mW power consumption are the today's standard, while TDCs have reached sub-picosecond time resolution. These results have been made possible by architectural upgrades combined with the use of ultra deep submicron CMOS technologies with minimum feature size of 130 nm or smaller. Front-end ASICs in which a prompt digitization is followed by signal conditioning in the digital domain can now be envisaged also within the tight power budget typically available in high density tracking systems. Furthermore, tracking detectors embedding high resolution timing capabilities are gaining interest. In the paper, ADC's and TDC's developments which are of particular relevance for the design front-end electronics for semiconductor trackers are discussed along with the benefits and challenges of exploiting such high performance building blocks in implementing the next generation of ASICs for high granularity particle detectors.

Semiconductor apparatus utilizing gradient freeze and liquid-solid techniques

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Caillat, Thierry F. (Inventor); Borshchevsky, Alexander (Inventor)

1998-01-01

Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.). Optimizing the transport properties of semiconductor materials prepared from elemental mixtures Co, Rh, Ir and Sb resulted in a substantial increase in the thermoelectric figure of merit (ZT) at temperatures as high as 400.degree. C. for thermoelectric elements fabricated from such semiconductor materials.

75 FR 44015 - Certain Semiconductor Products Made by Advanced Lithography Techniques and Products Containing...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-07-27

... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-729] Certain Semiconductor Products Made by... the sale within the United States after importation of certain semiconductor products made by advanced lithography techniques and products containing same by reason of infringement of certain claims of U.S. Patent...

Lithium and boron based semiconductors for thermal neutron counting

NASA Astrophysics Data System (ADS)

Kargar, Alireza; Tower, Joshua; Hong, Huicong; Cirignano, Leonard; Higgins, William; Shah, Kanai

2011-09-01

Thermal neutron detectors in planar configuration were fabricated from LiInSe2 and B2Se3 crystals grown at RMD Inc. All fabricated semiconductor devices were characterized for the current-voltage (I-V) characteristic and neutron counting measurement. Pulse height spectra were collected from 241AmBe (neutron source on all samples), as well as 137Cs and 60Co gamma ray sources. In this study, the resistivity of all crystals is reported and the collected pulse height spectra are presented for fabricated devices. Note that, the 241AmBe neutron source was custom designed with polyethylene around the source as the neutron moderator, mainly to thermalize the fast neutrons before reaching the detectors. Both LiInSe2 and B2Se3 devices showed response to thermal neutrons of the 241AmBe source.

Charge Collection Efficiency in a segmented semiconductor detector interstrip region

NASA Astrophysics Data System (ADS)

Alarcon-Diez, V.; Vickridge, I.; Jakšić, M.; Grilj, V.; Schmidt, B.; Lange, H.

2017-09-01

Charged particle semiconductor detectors have been used in Ion Beam Analysis (IBA) for over four decades without great changes in either design or fabrication. However one area where improvement is desirable would be to increase the detector solid angle so as to improve spectrum statistics for a given incident beam fluence. This would allow the use of very low fluences opening the way, for example, to increase the time resolution in real-time RBS or for analysis of materials that are highly sensitive to beam damage. In order to achieve this goal without incurring the costs of degraded resolution due to kinematic broadening or large detector capacitance, a single-chip segmented detector (SEGDET) was designed and built within the SPIRIT EU infrastructure project. In this work we present the Charge Collection Efficiency (CCE) in the vicinity between two adjacent segments focusing on the interstrip zone. Microbeam Ion Beam Induced Charge (IBIC) measurements with different ion masses and energies were used to perform X-Y mapping of (CCE), as a function of detector operating conditions (bias voltage changes, detector housing possibilities and guard ring configuration). We show the (CCE) in the edge region of the active area and have also mapped the charge from the interstrip region, shared between adjacent segments. The results indicate that the electrical extent of the interstrip region is very close to the physical extent of the interstrip and guard ring structure with interstrip impacts contributing very little to the complete spectrum. The interstrip contributions to the spectra that do occur, can be substantially reduced by an offline anti-coincidence criterion applied to list mode data, which should also be easy to implement directly in the data acquisition software.

Multispectral Superconducting Quantum Detectors

DTIC Science & Technology

1995-08-01

Noise 30 2.2.6.3 YBCO QSKIP Noise Equivalent Power 31 2.2.7 Competing LWIR Semiconductor Based Quantum Detectors 33 2.2.8 Conclusions on Operation...spectrum. Of particular interest are photodetectors operating in the midwave 3-5um (MWIR) and longwave 8-12um ( LWIR ) infrared spectra. Interest in...body photon radiation in the MWIR and LWIR spectral bands. With a significant black body photon radiation, passive night imaging and target

Neutron Spectroscopy Using LiF Thin-Film Detectors

DTIC Science & Technology

2013-03-01

Michael A. Ford, BS Second Lieutenant, USAF Approved: LTC Stephen R. McHale (Chairman) Date John W. McClory, PhD (Member) Date Justin A. Clinton, PhD...Member) Date AFIT-ENP-13-M-10 Abstract A stacked array of segmented micro-structured semiconductor neutron detectors (MSNDs) has been fabricated to...conveniently available from radioisotopes , reactions involving incident protons, deuterons, and so on must rely on artificially accelerated particles [12

Defense Industrial Base Assessment: U.S. Imaging and Sensors Industry

DTIC Science & Technology

2006-10-01

uncooled devices, but provide much higher resolution. The semiconductor material used in the detector is typically mercury cadmium telluride (HgCdTe...The material principally used in the arrays was mercury cadmium telluride (HgCdTe). Generation 2 detectors significantly improved the signal-to...Silicide (PtSi), Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AlGaAs), Mercury Cadmium Telluride (HgCdTe), Indium Gallium Arsenide (InGaAs

MOSFET Electric-Charge Sensor

NASA Technical Reports Server (NTRS)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Neutral beam dose and sputtering characteristics in an ion implantation system

NASA Technical Reports Server (NTRS)

Roberts, A. S., Jr.; Ash, R. L.; Berger, M. H.

1973-01-01

A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Radioactivities of Long Duration Exposure Facility (LDEF) materials: Baggage and bonanzas

NASA Technical Reports Server (NTRS)

Smith, Alan R.; Hurley, Donna L.

1992-01-01

Radioactivities in materials onboard the returned Long Duration Exposure Facility (LDEF) satellite were studied by a variety of techniques. Among the most powerful is low-background Ge-semiconductor detector gamma-ray spectrometry, illustrated here by results obtained at the Lawrence Berkeley Laboratory's (LBL) Low Background Facilities. The observed radioactivities are of two origins: those radionuclides produced by nuclear reactions with the radiation field in orbit, and radionuclides present initially as 'contaminants' in materials used for construction of the spacecraft and experimental assemblies. In the first category are experiment-related monitor foils and tomato seeds, and such spacecraft materials as aluminum, stainless steel, and titanium. In the second category are aluminum, beryllium, titanium, vanadium, and some special glasses.

The ATLAS SemiConductor Tracker operation and performance

NASA Astrophysics Data System (ADS)

Pater, J. R.

2012-04-01

The ATLAS SemiConductor Tracker (SCT) is a key precision tracking detector in the ATLAS experiment at CERN's Large Hadron Collider. The SCT is composed of 4088 planar p-in-n silicon micro-strip detectors. The signals from the strips are processed in the front-end ABCD3TA ASICs, which operate in binary readout mode; data are transferred to the off-detector readout electronics via optical fibres. The SCT was completed in 2007. An extensive commissioning phase followed, during which calibration data were collected and analysed to determine the noise performance of the system, and further performance parameters of the detector were determined using cosmic ray data, both with and without magnetic field. After the commissioning phase, the SCT was ready for the first LHC proton-proton collisions in December 2009. From the beginning of data taking, the completed SCT has been in very good shape with more than 99% of its 6.3 million strips operational; the detector is well timed-in and the operational channels are 99.9% efficient in data acquisition. The noise occupancy and hit efficiency are better than the design specifications. The detector geometry is monitored continuously with a laser-based alignment system and is stable to the few-micron level; the alignment accuracy as determined by tracks is near specification and improving as statistics increase. The sensor behaviour in the 2T solenoidal magnetic field has been studied by measuring the Lorentz angle. Radiation damage in the silicon is monitored by periodic measurements of the leakage current; these measurements are in reasonable agreement with predictions.

High-response hybrid quantum dots- 2D conductor phototransistors: recent progress and perspectives

NASA Astrophysics Data System (ADS)

Sablon, Kimberly A.; Sergeev, Andrei; Najmaei, Sina; Dubey, Madan

2017-03-01

Having been inspired by the tremendous progress in material nanoscience and device nanoengineering, hybrid phototransistors combine solution processed colloidal semiconductor quantum dots (QDs) with graphene or two-dimensional (2D) semiconductor materials. Novel detectors demonstrate ultrahigh photoconductive gain, high and selective photoresponse, low noise, and very high responsivity in visible- and near-infrared ranges. The outstanding performance of phototransistors is primarily due to the strong, selective, and size tunable absorption of QDs and fast charge transfer in 2D high mobility conductors. However, the relatively small mobility of QD nanomaterials was a technological barrier, which limited the operating rate of devices. Very recent innovations in detector design and significant progress in QD ligand engineering provide effective tools for further qualitative improvements. This article reviews the recent progress in material science, nanophysics, and device engineering related to hybrid phototransistors. Detectors based on various QD nanomaterials and several 2D conductors are compared, and advantages and disadvantages of various nanomaterials for applications in hybrid phototransistors are identified. We also benchmark the experimental characteristics with model results that establish interrelations and tradeoffs between detector characteristics, such as responsivity, dark and noise currents, the photocarrier lifetime, response, and noise bandwidths. We have shown that the most recent phototransistors demonstrate performance limited by the fundamental generation recombination noise in high gain devices. Interrelation between the dynamic range of the detector and the detector sensitivity is discussed. The review is concluded with a brief discussion of the remaining challenges and possible significant improvements in the performance of hybrid phototransistors.

Detection system for high-resolution gamma radiation spectroscopy with neutron time-of-flight filtering

DOEpatents

Dioszegi, Istvan; Salwen, Cynthia; Vanier, Peter

2014-12-30

A .gamma.-radiation detection system that includes at least one semiconductor detector such as HPGe-Detector, a position-sensitive .alpha.-Detector, a TOF Controller, and a Digitizer/Integrator. The Digitizer/Integrator starts to process the energy signals of a .gamma.-radiation sent from the HPGe-Detector instantly when the HPGe-Detector detects the .gamma.-radiation. Subsequently, it is determined whether a coincidence exists between the .alpha.-particles and .gamma.-radiation signal, based on a determination of the time-of-flight of neutrons obtained from the .alpha.-Detector and the HPGe-Detector. If it is determined that the time-of-flight falls within a predetermined coincidence window, the Digitizer/Integrator is allowed to continue and complete the energy signal processing. If, however, there is no coincidence, the Digitizer/Integrator is instructed to be clear and reset its operation instantly.

Pillar-structured neutron detector based multiplicity system

DOE PAGES

Murphy, John W.; Shao, Qinghui; Voss, Lars F.; ...

2017-10-04

This work demonstrates the potential of silicon pillars filled with boron-10 as a sensor technology for a compact and portable neutron multiplicity system. Solid-state, semiconductor based neutron detectors may enable completely new detector form factors, offer an alternate approach to helium-3 based systems, and reduce detector weight and volume requirements. Thirty-two pillar-structured neutron detectors were assembled into a system with an active area of over 20 cm 2 and were used in this work to demonstrate the feasibility of this sensor technology as a potential replacement for helium-3 based gas detectors. Multiplicity measurements were successfully carried out using a californium-252more » neutron source, in which the source mass, system efficiency, and die-away time were determined. As a result, this demonstration shows that these solid-state detectors could allow for a more compact and portable system that could be used for special nuclear material identification in the field.« less

Pillar-structured neutron detector based multiplicity system

NASA Astrophysics Data System (ADS)

Murphy, John W.; Shao, Qinghui; Voss, Lars F.; Kerr, Phil L.; Fabris, Lorenzo; Conway, Adam M.; Nikolic, Rebecca J.

2018-01-01

This work demonstrates the potential of silicon pillars filled with boron-10 as a sensor technology for a compact and portable neutron multiplicity system. Solid-state, semiconductor based neutron detectors may enable completely new detector form factors, offer an alternate approach to helium-3 based systems, and reduce detector weight and volume requirements. Thirty-two pillar-structured neutron detectors were assembled into a system with an active area of over 20 cm2 and were used in this work to demonstrate the feasibility of this sensor technology as a potential replacement for helium-3 based gas detectors. Multiplicity measurements were successfully carried out using a californium-252 neutron source, in which the source mass, system efficiency, and die-away time were determined. This demonstration shows that these solid-state detectors could allow for a more compact and portable system that could be used for special nuclear material identification in the field.

Vertex detectors: The state of the art and future prospects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damerell, C.J.S.

1997-01-01

We review the current status of vertex detectors (tracking microscopes for the recognition of charm and bottom particle decays). The reasons why silicon has become the dominant detector medium are explained. Energy loss mechanisms are reviewed, as well as the physics and technology of semiconductor devices, emphasizing the areas of most relevance for detectors. The main design options (microstrips and pixel devices, both CCD`s and APS`s) are discussed, as well as the issue of radiation damage, which probably implies the need to change to detector media beyond silicon for some vertexing applications. Finally, the evolution of key performance parameters overmore » the past 15 years is reviewed, and an attempt is made to extrapolate to the likely performance of detectors working at the energy frontier ten years from now.« less

A new imaging method for understanding chemical dynamics: efficient slice imaging using an in-vacuum pixel detector.

PubMed

Jungmann, J H; Gijsbertsen, A; Visser, J; Visschers, J; Heeren, R M A; Vrakking, M J J

2010-10-01

The implementation of the Timepix complementary metal oxide semiconductor pixel detector in velocity map slice imaging is presented. This new detector approach eliminates the need for gating the imaging detector. In time-of-flight mode, the detector returns the impact position and the time-of-flight of charged particles with 12.5 ns resolution and a dynamic range of about 100 μs. The implementation of the Timepix detector in combination with a microchannel plate additionally allows for high spatial resolution information via center-of-mass centroiding. Here, the detector was applied to study the photodissociation of NO(2) at 452 nm. The energy resolution observed in the experiment was ΔE/E=0.05 and is limited by the experimental setup rather than by the detector assembly. All together, this new compact detector assembly is well-suited for slice imaging and is a promising tool for imaging studies in atomic and molecular physics research.

Counted Sb donors in Si quantum dots

NASA Astrophysics Data System (ADS)

Singh, Meenakshi; Pacheco, Jose; Bielejec, Edward; Perry, Daniel; Ten Eyck, Gregory; Bishop, Nathaniel; Wendt, Joel; Luhman, Dwight; Carroll, Malcolm; Lilly, Michael

2015-03-01

Deterministic control over the location and number of donors is critical for donor spin qubits in semiconductor based quantum computing. We have developed techniques using a focused ion beam and a diode detector integrated next to a silicon MOS single electron transistor to gain such control. With the diode detector operating in linear mode, the numbers of ions implanted have been counted and single ion implants have been detected. Poisson statistics in the number of ions implanted have been observed. Transport measurements performed on samples with counted number of implants have been performed and regular coulomb blockade and charge offsets observed. The capacitances to various gates are found to be in agreement with QCAD simulations for an electrostatically defined dot. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV opto-electronics

NASA Astrophysics Data System (ADS)

Jaiswal, Piyush; Ul Muazzam, Usman; Pratiyush, Anamika Singh; Mohan, Nagaboopathy; Raghavan, Srinivasan; Muralidharan, R.; Shivashankar, S. A.; Nath, Digbijoy N.

2018-01-01

We report on the deposition of Ga2O3 on III-nitride epi-layers using the microwave irradiation technique. We also report on the demonstration of a Ga2O3 device: a visible-blind, deep-UV detector, with a GaN-based heterostructure as the substrate. The film deposited in the solution medium, at <200 °C, using a metalorganic precursor, was nanocrystalline. XRD confirms that the as-deposited film, when annealed at high temperature, turns to polycrystalline β-Ga2O3. SEM shows the as-deposited film to be uniform, with a surface roughness of 4-5 nm, as revealed by AFM. Interdigitated metal-semiconductor-metal devices with Ni/Au contact exhibited a peak spectral response at 230 nm and a good visible rejection ratio. This demonstration of a deep-UV detector on the β-Ga2O3/III-nitride stack is expected to open up possibilities of functional and physical integration of β-Ga2O3 and GaN material families towards enabling next-generation high-performance devices by exciting band and heterostructure engineering.

Crystal growth, fabrication and evaluation of cadmium manganese telluride gamma ray detectors

NASA Astrophysics Data System (ADS)

Burger, Arnold; Chattopadhyay, Kaushik; Chen, Henry; Olivier Ndap, Jean; Ma, Xiaoyan; Trivedi, Sudhir; Kutcher, Susan W.; Chen, Rujin; Rosemeier, Robert D.

1999-03-01

Cadmium manganese telluride (Cd 1- xMn xTe) is a diluted magnetic semiconductor material which forms the basis for many important devices such as IR detectors, solar cells, magnetic field sensors, optical isolators, and visible and near IR lasers. High resistivity (>10 10 Ω cm) and high μ τ (>10 -6 cm 2/V) material, which are the two prerequisites in the fabrication of radiation detectors, has recently been demonstrated at Brimrose Corp. This paper presents the crystal growth of intentionally vanadium doped crystals, the surface preparation and contacting procedure, as well as the best detector performance obtained so far. Dark current characteristics, and low temperature photoluminescence results are also presented and discussed.

Apparatus and method for measuring the thickness of a semiconductor wafer

DOEpatents

Ciszek, Theodoer F.

1995-01-01

Apparatus for measuring thicknesses of semiconductor wafers, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light.

Biotechnology Opens New Routes to High-Performance Materials for Improved Photovoltaics, Batteries, Uncooled IR Detectors, Ferroelectrics and Optical Applications

DTIC Science & Technology

2006-11-01

for High Power-Density, Safe Batteries and Solar Energy applications Cloning reveals: Protein template is an enzyme catalyst: γ- Ga2O3 Enzyme that...catalyzes & templates synthesis of silica at low temperature also makes semiconductors from molecular precursors: TiO2 , Ga2O3 , ZnO...CoO, RuOx (311) γ- Ga2O3 Low-temperature catalysis & templating of semiconductor synthesis The catalyst IS the template! Catalytic & Structure

Methods for determining optical power, for power-normalizing laser measurements, and for stabilizing power of lasers via compliance voltage sensing

DOEpatents

Taubman, Matthew S; Phillips, Mark C

2015-04-07

A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

PubMed

Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

2011-06-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

Study of Light Neutron-Rich Nuclei Using a Multilayer Semiconductor Setup

NASA Astrophysics Data System (ADS)

Gurov, Yu. B.; Lapushkin, S. V.; Sandukovsky, V. G.; Chernyshev, B. A.

2017-12-01

The characteristics of two modifications of the semiconductor (s.c.d.) setup consisting of telescopes on the basis of silicon detectors are presented. These settings allow performing a precision measurement of energy in a large dynamic range (from a few to hundreds of MeV) and particle identification in a wide range of masses. The issues of measurement of the characteristics of s.c.d. telescopes and their impact on the quality of the obtained experimental data are considered. Considerable attention is paid to the use of created semiconductor devices for the search for and spectroscopy of light exotic nuclei on the accelerators of PNPI (Gatchina) and LANL (Los Alamos).

Astronaut Peggy Whitson Installs SUBSA Experiment

NASA Technical Reports Server (NTRS)

2002-01-01

Expedition Five flight engineer Peggy Whitson is shown installing the Solidification Using a Baffle in Sealed Ampoules (SUBSA) experiment in the Microgravity Science Glovebox (MSG) in the Destiny laboratory aboard the International Space Station (ISS). SUBSA examines the solidification of semiconductor crystals from a melted material. Semiconductor crystals are used for many products that touch our everyday lives. They are found in computer chips, integrated circuits, and a multitude of other electronic devices, such as sensors for medical imaging equipment and detectors of nuclear radiation. Materials scientists want to make better semiconductor crystals to be able to further reduce the size of high-tech devices. In the microgravity environment, convection and sedimentation are reduced, so fluids do not remove and deform. Thus, space laboratories provide an ideal environment of studying solidification from the melt. This investigation is expected to determine the mechanism causing fluid motion during production of semiconductors in space. It will provide insight into the role of the melt motion in production of semiconductor crystals, advancing our knowledge of the crystal growth process. This could lead to a reduction of defects in semiconductor crystals produced in space and on Earth.

International Space Station (ISS)

NASA Image and Video Library

2002-07-05

Expedition Five flight engineer Peggy Whitson is shown installing the Solidification Using a Baffle in Sealed Ampoules (SUBSA) experiment in the Microgravity Science Glovebox (MSG) in the Destiny laboratory aboard the International Space Station (ISS). SUBSA examines the solidification of semiconductor crystals from a melted material. Semiconductor crystals are used for many products that touch our everyday lives. They are found in computer chips, integrated circuits, and a multitude of other electronic devices, such as sensors for medical imaging equipment and detectors of nuclear radiation. Materials scientists want to make better semiconductor crystals to be able to further reduce the size of high-tech devices. In the microgravity environment, convection and sedimentation are reduced, so fluids do not remove and deform. Thus, space laboratories provide an ideal environment of studying solidification from the melt. This investigation is expected to determine the mechanism causing fluid motion during production of semiconductors in space. It will provide insight into the role of the melt motion in production of semiconductor crystals, advancing our knowledge of the crystal growth process. This could lead to a reduction of defects in semiconductor crystals produced in space and on Earth.

Photoconductive detector of circularly polarized radiation based on a MIS structure with a CoPt layer

NASA Astrophysics Data System (ADS)

Kudrin, A. V.; Dorokhin, M. V.; Zdoroveishchev, A. V.; Demina, P. B.; Vikhrova, O. V.; Kalent'eva, I. L.; Ved', M. V.

2017-11-01

A photoconductive detector of circularly polarized radiation based on the metal-insulator-semiconductor structure of CoPt/(Al2O3/SiO2/Al2O3)/InGaAs/GaAs is created. The efficiency of detection of circularly polarized radiation is 0.75% at room temperature. The operation of the detector is based on the manifestation of the effect of magnetic circular dichroism in the CoPt layer, that is, the dependence of the CoPt transmission coefficient on the sign of the circular polarization of light and magnetization.

Materials processing threshold report. 1: Semiconductor crystals for infrared detectors

NASA Technical Reports Server (NTRS)

Sager, E. V.; Thompson, T. R.; Nagler, R. G.

1980-01-01

An extensive search was performed of the open literature pertaining to infrared detectors to determine what constitutes a good detector and in what way performance is limited by specific material properties. Interviews were conducted with a number of experts in the field to assess their perceptions of the state of the art and of the utility of zero-gravity processing. Based on this information base and on a review of NASA programs in crystal growth and infrared sensors, NASA program goals were reassessed and suggestions are presented as to possible joint and divergent efforts between NASA and DOD.

Velocity map imaging using an in-vacuum pixel detector.

PubMed

Gademann, Georg; Huismans, Ymkje; Gijsbertsen, Arjan; Jungmann, Julia; Visschers, Jan; Vrakking, Marc J J

2009-10-01

The use of a new type in-vacuum pixel detector in velocity map imaging (VMI) is introduced. The Medipix2 and Timepix semiconductor pixel detectors (256 x 256 square pixels, 55 x 55 microm2) are well suited for charged particle detection. They offer high resolution, low noise, and high quantum efficiency. The Medipix2 chip allows double energy discrimination by offering a low and a high energy threshold. The Timepix detector allows to record the incidence time of a particle with a temporal resolution of 10 ns and a dynamic range of 160 micros. Results of the first time application of the Medipix2 detector to VMI are presented, investigating the quantum efficiency as well as the possibility to operate at increased background pressure in the vacuum chamber.

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

NASA Technical Reports Server (NTRS)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

Improved insulator layer for MIS devices

NASA Technical Reports Server (NTRS)

Miller, W. E.

1980-01-01

Insulating layer of supersonic conductor such as LaF sub 3 has been shown able to impart improved electrical properties to photoconductive detectors and promises to improve other metal/insulator/semiconductor (MIS) devices, e.g., MOSFET and integrated circuits.

Improved scintillation detector performance via a method of enhanced layered coatings

DOE PAGES

Wakeford, Daniel Tyler; Tornga, Shawn Robert; Adams, Jillian Cathleen; ...

2016-11-16

Increasing demand for better detection performance with a simultaneous reduction in size, weight and power consumption has motivated the use of compact semiconductors as photo-converters for many gamma-ray and neutron scintillators. The spectral response of devices such as silicon avalanche photodiodes (APDs) is poorly matched to many common high-performance scintillators. We have developed a generalized analytical method that utilizes an optical reference database to match scintillator luminescence to the excitation spectrum of high quantum efficiency semiconductor detectors. This is accomplished by the fabrication and application of a series of high quantum yield, short fluorescence lifetime, wavelengthshifting coatings. Furthermore, we showmore » here a 22% increase in photoelectron collection and a 10% improvement in energy resolution when applying a layered coating to an APD-coupled, cerium-doped, yttrium oxyorthosilicate (YSO:Ce) scintillator. Wavelength-shifted radioluminescence emission and rise time analysis are also discussed.« less

Some results on radiation belt electrons from observations of satellite-borne semiconductor electron detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng Doug-yuan; Wu Ji-ping

1987-04-01

This paper presents some results from observations of a Chinese satellite-borne semiconductor electron detector. Data analysis yields typical values of electron fluxes in the central region of the inner radiation belt. The omnidirectional fluxes of electrons having energies greater than 0.5 MeV and 1.0 MeV are 1.9 x 10/sup 8/ and 6.7 x 10/sup 7/ elec./s-cm/sup 2/, respectively. The electron-flux profile on a typical orbit as a function of time is also given. In addition, the omnidirectional fluxes at the synchronous altitude for the two electron-energy levels mentioned are 2.43 x 10/sup 6/ and 4.25 x 10/sup 5/ elec./s-cm/sup 2/.more » The diurnal variations of electrons in the outer radiation belt observed at the synchronous altitude are also given. The results agree with those observed abroad.« less

Picosecond UV single photon detectors with lateral drift field: Concept and technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakimov, M.; Oktyabrsky, S.; Murat, P.

2015-09-01

Group III–V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III–V processing technologies, such as interface and surface passivation, large area deep submicron lithography with high-aspect ratio etching primarily driven by the metal-oxide-semiconductor field-effect transistor development can also be used for other applications. In this paper we will focus on photodetectors with the drift field parallel to the surface. We compare the proposed concept to the state-of-the-art Si-based technology and discuss requirements which need to be satisfied for such detectors to be used in a single photon counting modemore » in blue and ultraviolet spectral region with about 10 ps photon timing resolution essential for numerous applications ranging from high-energy physics to medical imaging.« less

[Radioactive cesium analysis in radiation-tainted beef by gamma-ray spectrometry with germanium semiconductor detector].

PubMed

Minatani, Tomiaki; Nagai, Hiroyuki; Nakamura, Masashi; Otsuka, Kimihito; Sakai, Yoshimichi

2012-01-01

The detection limit and precision of radioactive cesium measurement in beef by gamma-ray spectrometry with a germanium semiconductor detector were evaluated. Measurement for 2,000 seconds using a U-8 container (100 mL) provided a detection limit of radioactive cesium (the sum of 134Cs and 137Cs) of around 20 Bq/kg. The 99% confidence interval of the measurement of provisional maximum residue limit level (491 Bq/kg) samples ranged from 447 to 535 Bq/kg. Beef is heterogeneous, containing muscle and complex fat layers. Depending on the sampled parts, the measurement value is variable. It was found that radioactive cesium content of the muscle layer was clearly different from that of fat, and slight differences were observed among parts of the sample (SD=16.9 Bq/kg), even though the same region (neck block) of beef sample was analyzed.

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

Development of a stable and sensitive semiconductor detector by using a mixture of lead(II) iodide and lead monoxide for NDT radiation dose detection

NASA Astrophysics Data System (ADS)

Heo, Y. J.; Kim, K. T.; Han, M. J.; Moon, C. W.; Kim, J. E.; Park, J. K.; Park, S. K.

2018-03-01

Recently, high-energy radiation has been widely used in various industrial fields, including the medical industry, and increasing research efforts have been devoted to the development of radiation detectors to be used with high-energy radiation. In particular, nondestructive industrial applications use high-energy radiation for ships and multilayered objects for accurate inspection. Therefore, it is crucial to verify the accuracy of radiation dose measurements and evaluate the precision and reproducibility of the radiation output dose. Representative detectors currently used for detecting the dose in high-energy regions include Si diodes, diamond diodes, and ionization chambers. However, the process of preparing these detectors is complex in addition to the processes of conducting dosimetric measurements, analysis, and evaluation. Furthermore, the minimum size that can be prepared for a detector is limited. In the present study, the disadvantages of original detectors are compensated by the development of a detector made of a mixture of polycrystalline PbI2 and PbO powder, which are both excellent semiconducting materials suitable for detecting high-energy gamma rays and X-rays. The proposed detector shows characteristics of excellent reproducibility and stable signal detection in response to the changes in energy, and was analyzed for its applicability. Moreover, the detector was prepared through a simple process of particle-in-binder to gain control over the thickness and meet the specific value designated by the user. A mixture mass ratio with the highest reproducibility was determined through reproducibility testing with respect to changes in the photon energy. The proposed detector was evaluated for its detection response characteristics with respect to high-energy photon beam, in terms of dose-rate dependence, sensitivity, and linearity evaluation. In the reproducibility assessment, the detector made with 15 wt% PbO powder showed the best characteristics of 0.59% and 0.25% at 6 and 15 MV, respectively. Based on its selection in the reproducibility assessment, the 15 wt% PbO detector showed no dependence on the dose-rate changes, with R-SD < 1%. Finally, a coefficient of determination of 1 in the linearity assessment demonstrated very good linearity with regards to changes in dose. These results demonstrate the applicability and usefulness of the proposed detector made from a mixture of PbI2 and PbO semiconductors.

Hot-Electron Gallium Nitride Two Dimensional Electron Gas Nano-bolometers For Advanced THz Spectroscopy

NASA Astrophysics Data System (ADS)

Ramaswamy, Rahul

Two-dimensional electron gas (2DEG) in semiconductor heterostructures was identified as a promising medium for hot-electron bolometers (HEB) in the early 90s. Up until now all research based on 2DEG HEBs is done using high mobility AlGaAs/GaAs heterostructures. These systems have demonstrated very good performance, but only in the sub terahertz (THz) range. However, above ˜0.5 THz the performance of AlGaAs/GaAs detectors drastically deteriorates. It is currently understood, that detectors fabricated from standard AlGaAs/GaAs heterostructures do not allow for reasonable coupling to THz radiation while maintaining high conversion efficiency. In this work we have developed 2DEG HEBs based on disordered Gallium Nitride (GaN) semiconductor, that operate at frequencies beyond 1THz at room temperature. We observe strong free carrier absorption at THz frequencies in our disordered 2DEG film due to Drude absorption. We show the design and fabrication procedures of novel micro-bolometers having ultra-low heat capacities. In this work the mechanism of 2DEG response to THz radiation is clearly identified as bolometric effect through our direct detection measurements. With optimal doping and detector geometry, impedances of 10--100 O have been achieved, which allow integration of these devices with standard THz antennas. We also demonstrate performance of the antennas used in this work in effectively coupling THz radiation to the micro-bolometers through polarization dependence and far field measurements. Finally heterodyne mixing due to hot electrons in the 2DEG micro-bolometer has been performed at sub terahertz frequencies and a mixing bandwidth greater than 3GHz has been achieved. This indicates that the characteristic cooling time in our detectors is fast, less than 50ps. Due to the ultra-low heat capacity; these detectors can be used in a heterodyne system with a quantum cascade laser (QCL) as a local oscillator (LO) which typically provides output powers in the micro watt range. Our studies suggest that such room temperature detectors from GaN semiconductor, with reasonable bandwidth, low LO power requirements and high sensitivity have numerous applications, ranging from precise identification of complex molecules, environmental monitoring of critical substances, remote detection of various pollutants in the atmosphere, and noninvasive medical imaging as well as a variety of applications for defense and homeland security.

Simulation and experimental measurement of radon activity using a multichannel silicon-based radiation detector.

PubMed

Ozdemir, F B; Selcuk, A B; Ozkorucuklu, S; Alpat, A B; Ozdemir, T; Ӧzek, N

2018-05-01

In this study, high-precision radiation detector (HIPRAD), a new-generation semiconductor microstrip detector, was used for detecting radon (Rn-222) activity. The aim of this study was to detect radon (Rn-222) activity experimentally by measuring the energy of particles in this detector. Count-ADC channel, eta-charge, and dose-response values were experimentally obtained using HIPRAD. The radon simulation in the radiation detector was theoretically performed using the Geant4 software package. The obtained radioactive decay, energy generation, energy values, and efficiency values of the simulation were plotted using the root program. The new-generation radiation detector proved to have 95% reliability according to the obtained dose-response graphs. The experimental and simulation results were found to be compatible with each other and with the radon decays and literature studies. Copyright © 2018 Elsevier Ltd. All rights reserved.

Contact-lens type of micromachined hydrogenated amorphous Si fluorescence detector coupled with microfluidic electrophoresis devices

NASA Astrophysics Data System (ADS)

Kamei, Toshihiro; Wada, Takehito

2006-09-01

A 5.8-μm-thick SiO2/Ta2O5 multilayer optical interference filter was monolithically integrated and micromachined on a hydrogenated amorphous Si (a-Si :H) pin photodiode to form a fluorescence detector. A microfluidic electrophoresis device was mounted on a detection platform comprising a fluorescence-collecting half-ball lens and the micromachined fluorescence detector. The central aperture of the fluorescence detector allows semiconductor laser light to pass up through the detector and to irradiate an electrophoretic separation channel. The limit of detection is as low as 7nM of the fluorescein solution, and high-speed DNA fragment sizing can be achieved with high separation efficiency. The micromachined a-Si :H fluorescence detector exhibits high sensitivity for practical fluorescent labeling dyes as well as integration flexibility on various substances, making it ideal for application to portable microfluidic bioanalysis devices.

The research of adaptive-exposure on spot-detecting camera in ATP system

NASA Astrophysics Data System (ADS)

Qian, Feng; Jia, Jian-jun; Zhang, Liang; Wang, Jian-Yu

2013-08-01

High precision acquisition, tracking, pointing (ATP) system is one of the key techniques of laser communication. The spot-detecting camera is used to detect the direction of beacon in laser communication link, so that it can get the position information of communication terminal for ATP system. The positioning accuracy of camera decides the capability of laser communication system directly. So the spot-detecting camera in satellite-to-earth laser communication ATP systems needs high precision on target detection. The positioning accuracy of cameras should be better than +/-1μ rad . The spot-detecting cameras usually adopt centroid algorithm to get the position information of light spot on detectors. When the intensity of beacon is moderate, calculation results of centroid algorithm will be precise. But the intensity of beacon changes greatly during communication for distance, atmospheric scintillation, weather etc. The output signal of detector will be insufficient when the camera underexposes to beacon because of low light intensity. On the other hand, the output signal of detector will be saturated when the camera overexposes to beacon because of high light intensity. The calculation accuracy of centroid algorithm becomes worse if the spot-detecting camera underexposes or overexposes, and then the positioning accuracy of camera will be reduced obviously. In order to improve the accuracy, space-based cameras should regulate exposure time in real time according to light intensity. The algorithm of adaptive-exposure technique for spot-detecting camera based on metal-oxide-semiconductor (CMOS) detector is analyzed. According to analytic results, a CMOS camera in space-based laser communication system is described, which utilizes the algorithm of adaptive-exposure to adapting exposure time. Test results from imaging experiment system formed verify the design. Experimental results prove that this design can restrain the reduction of positioning accuracy for the change of light intensity. So the camera can keep stable and high positioning accuracy during communication.

Thermal Diffusivity for III-VI Semiconductor Melts at Different Temperatures

NASA Technical Reports Server (NTRS)

Ban, H.; Li, C.; Lin, B.; Emoto, K.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

2004-01-01

The change of the thermal properties of semiconductor melts reflects the structural changes inside the melts, and a fundamental understanding of this structural transformation is essential for high quality semiconductor crystal growth process. This paper focused on the technical development and the measurement of thermal properties of III-VI semiconductor melts at high temperatures. Our previous work has improved the laser flash method for the specialized quartz sample cell. In this paper, we reported the results of our recent progress in further improvements of the measurement system by minimizing the free convection of the melt, adding a front IR detector, and placing the sample cell in a vacuum environment. The results for tellurium and selenium based compounds, some of which have never been reported in the literature, were obtained at different temperatures as a function of time. The data were compared with other measured thermophysical properties to shed light on the structural transformations of the melt.

Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates

NASA Astrophysics Data System (ADS)

Jacobs, R. N.; Jaime Vasquez, M.; Lennon, C. M.; Nozaki, C.; Almeida, L. A.; Pellegrino, J.; Arias, J.; Taylor, C.; Wissman, B.

2015-09-01

Infrared focal plane arrays (IRFPA) based on HgCdTe semiconductor alloys have been shown to be ideal for tactical and strategic applications. High density (>1 M pixel), high operability HgCdTe detectors on large area, low-cost composite substrates, such as CdTe-buffered Si or GaAs, are envisioned for next-generation IRFPAs. Thermal expansion mismatch is among various material parameters that govern the structural properties of the final detector layer. It has previously been shown that thermal expansion mismatch plays the dominant role in the residual stress characteristics of these heteroepitaxial structures (Jacobs et al. in J Electron Mater 37:1480, 2008). The wafer curvature (bowing) resulting from residual stress, is a likely source of problems that may occur during subsequent processing. This includes cracking of the film and substrate during post-growth annealing processes or even certain characterization techniques. In this work, we examine dynamic curvature and stress during molecular beam epitaxy (MBE), of CdTe on Si and GaAs substrates. The effect of temperature changes on wafer curvature throughout the growth sequence is documented using a multi-beam optical sensor developed by K-Space Associates. This monitoring technique makes possible the study of growth sequences which employ annealing schemes and/or interlayers to influence the final residual stress state of the heteroepitaxial structures.

Optical properties of materials at low temperature and their application to optical detection

NASA Technical Reports Server (NTRS)

Hartwig, W. H.; Tarchi, A. A.

1972-01-01

A lumped model to represent the photodielectric effect is developed. An analog simulation for a sample in a microwave cavity with a static magnetic field is developed. A system to measure continuously the PDE is analyzed. A performance factor to compared PD detectors versus ac photoconductors is computed. The operating conditions are defined for the appropriate noise conditions. The detectivity of the detector is found to be limited by the semiconductor sample noise.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, G. R.; Gordon, N. T.; Hall, D. J.; Ashby, M. K.; Little, J. C.; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, M. T.; Ashley, T.

2004-01-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas sensing; radiation shielding for, and non-uniformity correction of, high sensitivity staring infrared detectors; and dynamic infrared scene projection. Similarly, infrared (IR) detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We present results on negative luminescence in the mid- and long-IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1 cm×1 cm. We also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high-performance imaging is anticipated from systems which require no mechanical cooling.

Infrared negative luminescent devices and higher operating temperature detectors

NASA Astrophysics Data System (ADS)

Nash, Geoff R.; Gordon, Neil T.; Hall, David J.; Little, J. Chris; Masterton, G.; Hails, J. E.; Giess, J.; Haworth, L.; Emeny, Martin T.; Ashley, Tim

2004-02-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source" of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very higher performance imaging is anticipated from systems which require no mechanical cooling.

Infrared Negative Luminescent Devices and Higher Operating Temperature Detectors

NASA Astrophysics Data System (ADS)

Ashley, Tim

2003-03-01

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a source' of IR radiation for gas sensing; radiation shielding for and non-uniformity correction of high sensitivity starring infrared detectors; and dynamic infrared scene projection. Similarly, IR detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We will present results on negative luminescence in the mid and long IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1cm x 1cm. We will also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high performance imaging is anticipated from systems which require no mechanical cooling.

Development of integrated semiconductor optical sensors for functional brain imaging

NASA Astrophysics Data System (ADS)

Lee, Thomas T.

Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

NASA Technical Reports Server (NTRS)

Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

1998-01-01

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

3D analysis of semiconductor devices: A combination of 3D imaging and 3D elemental analysis

NASA Astrophysics Data System (ADS)

Fu, Bianzhu; Gribelyuk, Michael A.

2018-04-01

3D analysis of semiconductor devices using a combination of scanning transmission electron microscopy (STEM) Z-contrast tomography and energy dispersive spectroscopy (EDS) elemental tomography is presented. 3D STEM Z-contrast tomography is useful in revealing the depth information of the sample. However, it suffers from contrast problems between materials with similar atomic numbers. Examples of EDS elemental tomography are presented using an automated EDS tomography system with batch data processing, which greatly reduces the data collection and processing time. 3D EDS elemental tomography reveals more in-depth information about the defect origin in semiconductor failure analysis. The influence of detector shadowing and X-rays absorption on the EDS tomography's result is also discussed.

Intermediate type excitons in Schottky barriers of A3B6 layer semiconductors and UV photodetectors

NASA Astrophysics Data System (ADS)

Alekperov, O. Z.; Guseinov, N. M.; Nadjafov, A. I.

2006-09-01

Photoelectric and photovoltaic spectra of Schottky barrier (SB) structures of InSe, GaSe and GaS layered semiconductors (LS) are investigated at quantum energies from the band edge excitons of corresponding materials up to 6.5eV. Spectral dependences of photoconductivity (PC) of photo resistors and barrier structures are strongly different at the quantum energies corresponding to the intermediate type excitons (ITE) observed in these semiconductors. It was suggested that high UV photoconductivity of A3B6 LS is due to existence of high mobility light carriers in the depth of the band structure. It is shown that SB of semitransparent Au-InSe is high sensitive photo detector in UV region of spectra.

Radioactivities of Long Duration Exposure Facility (LDEF) materials: Baggage and bonanzas

NASA Technical Reports Server (NTRS)

Smith, Alan R.; Hurley, Donna L.

1991-01-01

Radioactivities in materials onboard the returned Long Duration Exposure Facility (LDEF) satellite were studied by a variety of techniques. Among the most powerful is low background Ge semiconductor detector gamma ray spectrometry. The observed radioactivities are of two origins: those radionuclides produced by nuclear reactions with the radiation field in orbit and radionuclides present initially as contaminants in materials used for construction of the spacecraft and experimental assemblies. In the first category are experiment related monitor foils and tomato seeds, and such spacecraft materials as Al, stainless steel, and Ti. In the second category are Al, Be, Ti, Va, and some special glasses. Consider that measured peak-area count rates from both categories range from a high value of about 1 count per minute down to less than 0.001 count per minute. Successful measurement of count rates toward the low end of this range can be achieved only through low background techniques, such as used to obtain the results presented here.

Design and Implementation of a New Real-Time Frequency Sensor Used as Hardware Countermeasure

PubMed Central

Jiménez-Naharro, Raúl; Gómez-Galán, Juan Antonio; Sánchez-Raya, Manuel; Gómez-Bravo, Fernando; Pedro-Carrasco, Manuel

2013-01-01

A new digital countermeasure against attacks related to the clock frequency is –presented. This countermeasure, known as frequency sensor, consists of a local oscillator, a transition detector, a measurement element and an output block. The countermeasure has been designed using a full-custom technique implemented in an Application-Specific Integrated Circuit (ASIC), and the implementation has been verified and characterized with an integrated design using a 0.35 μm standard Complementary Metal Oxide Semiconductor (CMOS) technology (Very Large Scale Implementation—VLSI implementation). The proposed solution is configurable in resolution time and allowed range of period, achieving a minimum resolution time of only 1.91 ns and an initialization time of 5.84 ns. The proposed VLSI implementation shows better results than other solutions, such as digital ones based on semi-custom techniques and analog ones based on band pass filters, all design parameters considered. Finally, a counter has been used to verify the good performance of the countermeasure in avoiding the success of an attack. PMID:24008285

Radioactivities of Long Duration Exposure Facility (LDEF) materials: Baggage and bonanzas

NASA Astrophysics Data System (ADS)

Smith, Alan R.; Hurley, Donna L.

1991-06-01

Radioactivities in materials onboard the returned Long Duration Exposure Facility (LDEF) satellite were studied by a variety of techniques. Among the most powerful is low background Ge semiconductor detector gamma ray spectrometry. The observed radioactivities are of two origins: those radionuclides produced by nuclear reactions with the radiation field in orbit and radionuclides present initially as contaminants in materials used for construction of the spacecraft and experimental assemblies. In the first category are experiment related monitor foils and tomato seeds, and such spacecraft materials as Al, stainless steel, and Ti. In the second category are Al, Be, Ti, Va, and some special glasses. Consider that measured peak-area count rates from both categories range from a high value of about 1 count per minute down to less than 0.001 count per minute. Successful measurement of count rates toward the low end of this range can be achieved only through low background techniques, such as used to obtain the results presented here.

Velocity map imaging using an in-vacuum pixel detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gademann, Georg; Huismans, Ymkje; Gijsbertsen, Arjan

The use of a new type in-vacuum pixel detector in velocity map imaging (VMI) is introduced. The Medipix2 and Timepix semiconductor pixel detectors (256x256 square pixels, 55x55 {mu}m{sup 2}) are well suited for charged particle detection. They offer high resolution, low noise, and high quantum efficiency. The Medipix2 chip allows double energy discrimination by offering a low and a high energy threshold. The Timepix detector allows to record the incidence time of a particle with a temporal resolution of 10 ns and a dynamic range of 160 {mu}s. Results of the first time application of the Medipix2 detector to VMImore » are presented, investigating the quantum efficiency as well as the possibility to operate at increased background pressure in the vacuum chamber.« less

Semiconductor photoelectrochemistry

NASA Technical Reports Server (NTRS)

Buoncristiani, A. M.; Byvik, C. E.

1983-01-01

Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

Resonant metamaterial detectors based on THz quantum-cascade structures

PubMed Central

Benz, A.; Krall, M.; Schwarz, S.; Dietze, D.; Detz, H.; Andrews, A. M.; Schrenk, W.; Strasser, G.; Unterrainer, K.

2014-01-01

We present the design, fabrication and characterisation of an intersubband detector employing a resonant metamaterial coupling structure. The semiconductor heterostructure relies on a conventional THz quantum-cascade laser design and is operated at zero bias for the detector operation. The same active region can be used to generate or detect light depending on the bias conditions and the vertical confinement. The metamaterial is processed directly into the top metal contact and is used to couple normal incidence radiation resonantly to the intersubband transitions. The device is capable of detecting light below and above the reststrahlenband of gallium-arsenide corresponding to the mid-infrared and THz spectral region. PMID:24608677

Tunable quantum well infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A novel infrared detector (20, 20', 20), is provided, which is characterized by photon-assisted resonant tunneling between adjacent quantum wells (22a, 22b) separated by barrier layers (28) in an intrinsic semiconductor layer (24) formed on an n.sup.+ substrate (26), wherein the resonance is electrically tunable over a wide band of wavelengths in the near to long infrared region. An n.sup.+ contacting layer (34) is formed over the intrinsic layer and the substrate is n.sup.+ doped to provide contact to the quantum wells. The detector permits fabrication of arrays (30) (one-dimensional and two-dimensional) for use in imaging and spectroscopy applications.

Apparatus and method for measuring the thickness of a semiconductor wafer

DOEpatents

Ciszek, T.F.

1995-03-07

Apparatus for measuring thicknesses of semiconductor wafers is discussed, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light. 4 figs.

New methods of subcooled water recognition in dew point hygrometers

NASA Astrophysics Data System (ADS)

Weremczuk, Jerzy; Jachowicz, Ryszard

2001-08-01

Two new methods of sub-cooled water recognition in dew point hygrometers are presented in this paper. The first one- impedance method use a new semiconductor mirror in which the dew point detector, the thermometer and the heaters were integrated all together. The second one an optical method based on a multi-section optical detector is discussed in the report. Experimental results of both methods are shown. New types of dew pont hydrometers of ability to recognized sub-cooled water were proposed.

Fast, Low-Power, Hysteretic Level-Detector Circuit

NASA Technical Reports Server (NTRS)

Arditti, Mordechai

1993-01-01

Circuit for detection of preset levels of voltage or current intended to replace standard fast voltage comparator. Hysteretic analog/digital level detector operates at unusually low power with little sacrifice of speed. Comprises low-power analog circuit and complementary metal oxide/semiconductor (CMOS) digital circuit connected in overall closed feedback loop to decrease rise and fall times, provide hysteresis, and trip-level control. Contains multiple subloops combining linear and digital feedback. Levels of sensed signals and hysteresis level easily adjusted by selection of components to suit specific application.

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

NASA Technical Reports Server (NTRS)

Danchenko, V.

1974-01-01

Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

Entrance and exit dose measurements with semiconductors and thermoluminescent dosemeters: a comparison of methods and in vivo results.

PubMed

Loncol, T; Greffe, J L; Vynckier, S; Scalliet, P

1996-11-01

In order to compare diodes and TLD for in vivo dosimetry, systematic measurements of entrance and exit doses were performed with semiconductor detectors and thermoluminescent dosemeters for brain and head and neck patients treated isocentrically with external photon beam therapy. Scanditronix EDP-20 diodes and 7LiF thermoluminescent chips, irradiated in a 8 MV linac, were studied with similar build-up cap geometries and materials in order to assure an equivalent electronic equilibrium. Identical calibration methodology was applied to both detectors for the dose determination in clinical conditions. For the entrance dose evaluation over 249 field measurements, the ratio of the measured dose to the expected dose, calculated from tabulated tissue maximum ratios, was equal to 1.010 +/- 0.028 (1 s.d.) from diodes and 1.013 +/- 0.041 from thermoluminescent crystals. For the exit dose measurements, these ratios were equal to 0.998 +/- 0.049 and 1.016 +/- 0.070 for diodes and TLDs, respectively, after application of a simple inhomogeneity correction to the calculation of the expected exit dose. Thermoluminescence and semiconductors led to identical results for entrance and exit dose evaluation but TLDs were characterised by a lower reproducibility inherent to the TL process itself and to the acquisition and annihilation procedures.

75 FR 81643 - In the Matter of Certain Semiconductor Products Made by Advanced Lithography Techniques and...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-12-28

... Semiconductor Products Made by Advanced Lithography Techniques and Products Containing Same; Notice of... Mexico) (``STC''), alleging a violation of section 337 in the importation, sale for [[Page 81644

Soft liquid phase adsorption for fabrication of organic semiconductor films on wettability patterned surfaces.

PubMed

Watanabe, Satoshi; Akiyoshi, Yuri; Matsumoto, Mutsuyoshi

2014-01-01

We report a soft liquid-phase adsorption (SLPA) technique for the fabrication of organic semiconductor films on wettability-patterned substrates using toluene/water emulsions. Wettability-patterned substrates were obtained by the UV-ozone treatment of self-assembled monolayers of silane coupling agents on glass plates using a metal mask. Organic semiconductor polymer films were formed selectively on the hydrophobic part of the wettability-patterned substrates. The thickness of the films fabricated by the SLPA technique is significantly larger than that of the films fabricated by dip-coating and spin-coating techniques. The film thickness can be controlled by adjusting the volume ratio of toluene to water, immersion angle, immersion temperature, and immersion time. The SLPA technique allows for the direct production of organic semiconductor films on wettability-patterned substrates with minimized material consumption and reduced number of fabrication steps.

Method of physical vapor deposition of metal oxides on semiconductors

DOEpatents

Norton, David P.

2001-01-01

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Highly Sensitive Sensors Based on Metal-Oxide Nanocolumns for Fire Detection.

PubMed

Lee, Kwangjae; Shim, Young-Seok; Song, Young Geun; Han, Soo Deok; Lee, Youn-Sung; Kang, Chong-Yun

2017-02-07

A fire detector is the most important component in a fire alarm system. Herein, we present the feasibility of a highly sensitive and rapid response gas sensor based on metal oxides as a high performance fire detector. The glancing angle deposition (GLAD) technique is used to make the highly porous structure such as nanocolumns (NCs) of various metal oxides for enhancing the gas-sensing performance. To measure the fire detection, the interface circuitry for our sensors (NiO, SnO₂, WO₃ and In₂O₃ NCs) is designed. When all the sensors with various metal-oxide NCs are exposed to fire environment, they entirely react with the target gases emitted from Poly(vinyl chlorides) (PVC) decomposed at high temperature. Before the emission of smoke from the PVC (a hot-plate temperature of 200 °C), the resistances of the metal-oxide NCs are abruptly changed and SnO₂ NCs show the highest response of 2.1. However, a commercial smoke detector did not inform any warning. Interestingly, although the NiO NCs are a p -type semiconductor, they show the highest response of 577.1 after the emission of smoke from the PVC (a hot-plate temperature of 350 °C). The response time of SnO₂ NCs is much faster than that of a commercial smoke detector at the hot-plate temperature of 350 °C. In addition, we investigated the selectivity of our sensors by analyzing the responses of all sensors. Our results show the high potential of a gas sensor based on metal-oxide NCs for early fire detection.

Chemical Analysis of Outgassing Contaminants on Spacecraft Surfaces

NASA Technical Reports Server (NTRS)

Mcnutt, R. C.

1976-01-01

Samples of S-13 paint on aluminum, reflection grating anomalies as affected by dielectric coatings, and rocket effluents were analyzed along with Skylab window scrapings and a gas activated semiconductor. Development of an HCl detector is also discussed. Results are briefly summarized.

Feasibility of a semiconductor dosimeter to monitor skin dose in interventional radiology.

PubMed

Meyer, P; Regal, R; Jung, M; Siffert, P; Mertz, L; Constantinesco, A

2001-10-01

The design and preliminary test results of a semiconductor silicon dosimeter are presented in this article. Use of this dosimeter is foreseen for real-time skin dose control in interventional radiology. The strong energy dependence of this kind of radiation detector is well overcome by filtering the silicon diode. Here, the optimal filter features have been calculated by numerical Monte Carlo simulations. A prototype has been built and tested in a radiological facility. The first experimental results show a good match between the filtered semiconductor diode response and an ionization chamber response, within 2% fluctuation in a 2.2 to 4.1 mm Al half-value layer (HVL) energy range. Moreover, the semiconductor sensor response is linear from 0.02 Gy/min to at least 6.5 Gy/min, covering the whole dose rate range found in interventional radiology. The results show that a semiconductor dosimeter could be used to monitor skin dose during the majority of procedures using x-rays below 150 keV. The use of this device may assist in avoiding radiation-induced skin injuries and lower radiation levels during interventional procedures.

Advanced testing of the DEPFET minimatrix particle detector

NASA Astrophysics Data System (ADS)

Andricek, L.; Kodyš, P.; Koffmane, C.; Ninkovic, J.; Oswald, C.; Richter, R.; Ritter, A.; Rummel, S.; Scheirich, J.; Wassatsch, A.

2012-01-01

The DEPFET (DEPleted Field Effect Transistor) is an active pixel particle detector with a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) integrated in each pixel, providing first amplification stage of readout electronics. Excellent signal over noise performance is gained this way. The DEPFET sensor will be used as a vertex detector in the Belle II experiment at SuperKEKB, electron-positron collider in Japan. The vertex detector will be composed of two layers of pixel detectors (DEPFET) and four layers of strip detectors. The DEPFET sensor requires switching and current readout circuits for its operation. These circuits have been designed as ASICs (Application Specific Integrated Circuits) in several different versions, but they provide insufficient flexibility for precise detector testing. Therefore, a test system with a flexible control cycle range and minimal noise has been designed for testing and characterizing of small detector prototypes (Minimatrices). Sensors with different design layouts and thicknesses are produced in order to evaluate and select the one with the best performance for the Belle II application. Description of the test system as well as measurement results are presented.

Static sublimation purification process and characterization of LiZnAs semiconductor material

NASA Astrophysics Data System (ADS)

Montag, Benjamin W.; Reichenberger, Michael A.; Edwards, Nathaniel S.; Ugorowski, Philip B.; Sunder, Madhana; Weeks, Joseph; McGregor, Douglas S.

2016-03-01

Refinement of the class AIBIICV materials continue as a candidate for solid-state neutron detectors. Such a device would have greater efficiency, in a compact form, than present day gas-filled 3He and 10BF3 detectors. The 6Li(n,t)4He reaction yields a total Q value of 4.78 MeV, larger than 10B, and easily identified above background radiations. Hence, devices composed of either natural Li (nominally 7.5% 6Li) or enriched 6Li (usually 95% 6Li) may provide a semiconductor material for compact high efficiency neutron detectors. A sub-branch of the III-V semiconductors, the filled tetrahedral compounds, AIBIICV, known as Nowotny-Juza compounds, are known for their desirable cubic crystal structure. Starting material was synthesized by equimolar portions of Li, Zn, and As sealed under vacuum (10-6 Torr) in quartz ampoules with a boron nitride lining, and reacted in a compounding furnace [1]. The synthesized material showed signs of high impurity levels from material and electrical property characterization. In the present work, a static vacuum sublimation of synthesized LiZnAs loaded in a quartz vessel was performed to help purify the synthesized material. The chemical composition of the sublimed material and remains material was confirmed by Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES). Lithium was not detected in the sublimed material, however, near stoichiometric amounts of each constituent element were found in the remains material for LiZnAs. X-ray diffraction phase identification scans of the remains material and sublimed material were compared, and further indicated the impurity materials were removed from the synthesized materials. The remaining powder post the sublimation process showed characteristics of a higher purity ternary compound.

SiC As An Energetic Particle Detector

NASA Technical Reports Server (NTRS)

Yan, F.; Hicks, J.; Shappirio, Mark D.; Brown, S.; Smith, C.; Xin, X.; Zhao, J. H.

2005-01-01

Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SIC) since its band gap is larger than that of pure silicon, reducing its dark current and making SIC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower.

Giant spin-torque diode sensitivity in the absence of bias magnetic field.

PubMed

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A; Krivorotov, Ilya N; Ocker, Berthold; Langer, Juergen; Wang, Kang L; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-04-07

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Giant spin-torque diode sensitivity in the absence of bias magnetic field

PubMed Central

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A.; Krivorotov, Ilya N.; Ocker, Berthold; Langer, Juergen; Wang, Kang L.; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-01-01

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors. PMID:27052973

Detection systems for mass spectrometry imaging: a perspective on novel developments with a focus on active pixel detectors.

PubMed

Jungmann, Julia H; Heeren, Ron M A

2013-01-15

Instrumental developments for imaging and individual particle detection for biomolecular mass spectrometry (imaging) and fundamental atomic and molecular physics studies are reviewed. Ion-counting detectors, array detection systems and high mass detectors for mass spectrometry (imaging) are treated. State-of-the-art detection systems for multi-dimensional ion, electron and photon detection are highlighted. Their application and performance in three different imaging modes--integrated, selected and spectral image detection--are described. Electro-optical and microchannel-plate-based systems are contrasted. The analytical capabilities of solid-state pixel detectors--both charge coupled device (CCD) and complementary metal oxide semiconductor (CMOS) chips--are introduced. The Medipix/Timepix detector family is described as an example of a CMOS hybrid active pixel sensor. Alternative imaging methods for particle detection and their potential for future applications are investigated. Copyright © 2012 John Wiley & Sons, Ltd.

Detection of secondary and backscattered electrons for 3D imaging with multi-detector method in VP/ESEM.

PubMed

Slówko, Witold; Wiatrowski, Artur; Krysztof, Michał

2018-01-01

The paper considers some major problems of adapting the multi-detector method for three-dimensional (3D) imaging of wet bio-medical samples in Variable Pressure/Environmental Scanning Electron Microscope (VP/ESEM). The described method pertains to "single-view techniques", which to create the 3D surface model utilise a sequence of 2D SEM images captured from a single view point (along the electron beam axis) but illuminated from four directions. The basis of the method and requirements resulting from them are given for the detector systems of secondary (SE) and backscattered electrons (BSE), as well as designs of the systems which could work in variable conditions. The problems of SE detection with application of the Pressure Limiting Aperture (PLA) as the signal collector are discussed with respect to secondary electron backscattering by a gaseous environment. However, the authors' attention is turned mainly to the directional BSE detection, realized in two ways. The high take off angle BSE were captured through PLA with use of the quadruple semiconductor detector placed inside the intermediate chamber, while BSE starting at lower angles were detected by the four-folded ionization device working in the sample chamber environment. The latter relied on a conversion of highly energetic BSE into low energetic SE generated on walls and a gaseous environment of the deep discharge gap oriented along the BSE velocity direction. The converted BSE signal was amplified in an ionising avalanche developed in the electric field arranged transversally to the gap. The detector system operation is illustrated with numerous computer simulations and examples of experiments and 3D images. The latter were conducted in a JSM 840 microscope with its combined detector-vacuum equipment which could extend capabilities of this high vacuum instrument toward elevated pressures (over 1kPa) and environmental conditions. Copyright © 2017 Elsevier Ltd. All rights reserved.

Electric field-induced coherent control in GaAs: polarization dependence and electrical measurement [Invited].

PubMed

Wahlstrand, J K; Zhang, H; Choi, S B; Sipe, J E; Cundiff, S T

2011-11-07

A static electric field enables coherent control of the photoexcited carrier density in a semiconductor through the interference of one- and two-photon absorption. An experiment using optical detection is described. The polarization dependence of the signal is consistent with a calculation using a 14-band k · p model for GaAs. We also describe an electrical measurement. A strong enhancement of the phase-dependent photocurrent through a metal-semiconductor-metal structure is observed when a bias of a few volts is applied. The dependence of the signal on bias and laser spot position is studied. The field-induced enhancement of the signal could increase the sensitivity of semiconductor-based carrier-envelope phase detectors, useful in stabilizing mode-locked lasers for use in frequency combs.

Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy

NASA Astrophysics Data System (ADS)

Tuomisto, Filip

Positron annihilation spectroscopy is an experimental technique that allows the selective detection of vacancy defects in semiconductors, providing a means to both identify and quantify them. This chapter gives an introduction to the principles of the positron annihilation techniques and then discusses the physics of some interesting observations on vacancy defects related to growth and doping of semiconductors. Illustrative examples are selected from studies performed in silicon, III-nitrides, and ZnO.

Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

PubMed Central

Elia, Angela; Lugarà, Pietro Mario; Di Franco, Cinzia; Spagnolo, Vincenzo

2009-01-01

The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques. PMID:22303143

Strain detection in crystalline heterostructures using bidimensional blocking patterns of channelled particles

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; David-Bosne, E.; Wahl, U.; Miranda, P.; da Silva, M. R.; Correia, J. G.; Lorenz, K.

2018-03-01

Strain is a critical parameter affecting the growth and the performance of many semiconductor systems but, at the same time, the accurate determination of strain profiles in heterostructures can be challenging, especially at the nanoscale. Ion channelling/blocking is a powerful technique for the detection of the strain state of thin films, normally carried out through angular scans with conventional particle detectors. Here we report the novel application of position sensitive detectors for the evaluation of the strain in a series of AlInN/GaN heterostructures with different compositions and thicknesses. The tetragonal strain is varied from compressive to tensile and analysed through bidimensional blocking patterns. The results demonstrate that strain can be correctly quantified when compared to Monte Carlo channelling simulations, which are essential because of the presence of ion steering effects at the interface between the layer and the substrate. Despite this physical limitation caused by ion steering, our results show that full bidimensional patterns can be applied to detect fingerprints and enhance the accuracy for most critical cases, in which the angular shift associated to the lattice distortion is below the critical angle for channelling.

Solution-Grown Rubrene Crystals as Radiation Detecting Devices

DOE PAGES

Carman, Leslie; Martinez, H. Paul; Voss, Lars; ...

2017-01-11

There has been increased interest in organic semiconductors over the last decade because of their unique properties. Of these, 5, 6, 11, 12-tetraphenylnaphthacene (rubrene) has generated the most interest because of its high charge carrier mobility. In this paper, large single crystals with a volume of ~1 cm 3 were grown from solution by a temperature reduction technique. The faceted crystals had flat surfaces and cm-scale, visually defect-free areas suitable for physical characterization. X-ray diffraction analysis indicates that solvent does not incorporate into the crystals and photoluminescence spectra are consistent with pristine, high-crystallinity rubrene. Furthermore, the response curve to pulsedmore » optical illumination indicates that the solution grown crystals are of similar quality to those grown by physical vapor transport, albeit larger. The good quality of these crystals in combination with the improvement of electrical contacts by application of conductive polymer on the graphite electrodes have led to the clear observation of alpha particles with these rubrene detectors. Finally, preliminary results with a 252Cf source generate a small signal with the rubrene detector and may demonstrate that rubrene can also be used for detecting high-energy neutrons.« less

Single-photon semiconductor photodiodes for distributed optical fiber sensors: state of the art and perspectives

NASA Astrophysics Data System (ADS)

Ripamonti, Giancarlo; Lacaita, Andrea L.

1993-03-01

The extreme sensitivity and time resolution of Geiger-mode avalanche photodiodes (GM- APDs) have already been exploited for optical time domain reflectometry (OTDR). Better than 1 cm spatial resolution in Rayleigh scattering detection was demonstrated. Distributed and quasi-distributed optical fiber sensors can take advantage of the capabilities of GM-APDs. Extensive studies have recently disclosed the main characteristics and limitations of silicon devices, both commercially available and developmental. In this paper we report an analysis of the performance of these detectors. The main characteristics of GM-APDs of interest for distributed optical fiber sensors are briefly reviewed. Command electronics (active quenching) is then introduced. The detector timing performance sets the maximum spatial resolution in experiments employing OTDR techniques. We highlight that the achievable time resolution depends on the physics of the avalanche spreading over the device area. On the basis of these results, trade-off between the important parameters (quantum efficiency, time resolution, background noise, and afterpulsing effects) is considered. Finally, we show first results on Germanium devices, capable of single photon sensitivity at 1.3 and 1.5 micrometers with sub- nanosecond time resolution.

High-sensitivity brain SPECT system using cadmium telluride (CdTe) semiconductor detector and 4-pixel matched collimator.

PubMed

Suzuki, Atsuro; Takeuchi, Wataru; Ishitsu, Takafumi; Tsuchiya, Katsutoshi; Morimoto, Yuichi; Ueno, Yuichiro; Kobashi, Keiji; Kubo, Naoki; Shiga, Tohru; Tamaki, Nagara

2013-11-07

For high-sensitivity brain imaging, we have developed a two-head single-photon emission computed tomography (SPECT) system using a CdTe semiconductor detector and 4-pixel matched collimator (4-PMC). The term, '4-PMC' indicates that the collimator hole size is matched to a 2 × 2 array of detector pixels. By contrast, a 1-pixel matched collimator (1-PMC) is defined as a collimator whose hole size is matched to one detector pixel. The performance of the higher-sensitivity 4-PMC was experimentally compared with that of the 1-PMC. The sensitivities of the 1-PMC and 4-PMC were 70 cps/MBq/head and 220 cps/MBq/head, respectively. The SPECT system using the 4-PMC provides superior image resolution in cold and hot rods phantom with the same activity and scan time to that of the 1-PMC. In addition, with half the usual scan time the 4-PMC provides comparable image quality to that of the 1-PMC. Furthermore, (99m)Tc-ECD brain perfusion images of healthy volunteers obtained using the 4-PMC demonstrated acceptable image quality for clinical diagnosis. In conclusion, our CdTe SPECT system equipped with the higher-sensitivity 4-PMC can provide better spatial resolution than the 1-PMC either in half the imaging time with the same administered activity, or alternatively, in the same imaging time with half the activity.

Perforated semiconductor neutron detectors for battery operated portable modules

NASA Astrophysics Data System (ADS)

McGregor, Douglas S.; Bellinger, Steven L.; Bruno, David; McNeil, Walter J.; Patterson, Eric; Shultis, J. Kenneth; Solomon, C. J.; Unruh, Troy

2007-09-01

Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The fundamental device configuration is a pin diode detector fabricated from high-purity float zone refined Si wafers. Perforations are etched into the diode surface with inductively-coupled plasma (ICP) reactive ion etching (RIE) and backfilled with 6LiF neutron reactive material. The perforation shapes and depths can be optimized to yield a flat response to neutrons over a wide variation of angles. The prototype devices delivered over 3.8% thermal neutron detection efficiency while operating on only 15 volts. The highest efficiency devices thus far have delivered over 12% thermal neutron detection efficiency. The miniature devices are 5.6 mm in diameter and require minimal power to operate, ranging from 3.3 volts to 15 volts, depending upon the amplifying electronics. The battery operated devices have been incorporated into compact modules with a digital readout. Further, the new modules have incorporated wireless readout technology and can be monitored remotely. The neutron detection modules can be used for neutron dosimetry and neutron monitoring. When coupled with high-density polyethylene, the detectors can be used to measure fission neutrons from spontaneous fission sources. Monto Carlo analysis indicates that the devices can be used in cargo containers as a passive search tool for spontaneous fission sources, such as 240Pu. Measurements with a 252Cf source are being conducted for verification.

Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

NASA Astrophysics Data System (ADS)

Zhang, Liping; Jaroniec, Mietek

2018-02-01

Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

Alpha particle backscattering measurements used for chemical analysis of surfaces

NASA Technical Reports Server (NTRS)

Patterson, J. H.

1967-01-01

Alpha particle backscattering performs a chemical analysis of surfaces. The apparatus uses a curium source and a semiconductor detector to determine the energy spectrum of the particles. This in turn determines the chemical composition of the surface after calibration to known samples.

Optical-microwave interactions in semiconductor devices

NASA Astrophysics Data System (ADS)

Figueroa, L.; Slayman, C. W.; Yen, H. W.

1981-03-01

The results of an extensive characterization of microwave-optical devices is presented. The study has concentrated in the optical injection locking of IMPATT oscillators, high-speed analog modulation of (GaAl)As injection laser, mode-locking of (GaAl)As injection laser, and high-speed optical detectors.

Compact endocavity diagnostic probes for nuclear radiation detection

DOEpatents

Cui, Yonggang; James, Ralph; Bolotnikov, Aleksey

2014-08-26

This invention relates to the field of radiation imaging. In particular, the invention relates to an apparatus and a method for imaging tissue or an inanimate object using a novel probe that has an integrated solid-state semiconductor detector and complete readout electronics circuitry.

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors.

PubMed

Fluegel, Brian; Mialitsin, Aleksej V; Beaton, Daniel A; Reno, John L; Mascarenhas, Angelo

2015-05-28

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10(-4). Comparing our strain sensitivity and signal strength in Al(x)Ga(1-x)As with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10(3), thus obviating key constraints in semiconductor strain metrology.

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

PubMed Central

Fluegel, Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; Reno, John L.; Mascarenhas, Angelo

2015-01-01

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10−4. Comparing our strain sensitivity and signal strength in AlxGa1−xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 103, thus obviating key constraints in semiconductor strain metrology. PMID:26017853

Room temperature X- and gamma-ray detectors using thallium bromide crystals

NASA Astrophysics Data System (ADS)

Hitomi, K.; Muroi, O.; Shoji, T.; Suehiro, T.; Hiratate, Y.

1999-10-01

Thallium bromide (TlBr) is a compound semiconductor with wide band gap (2.68eV) and high X- and γ-ray stopping power. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using purified material. Two types of room temperature X- and γ-ray detectors were fabricated from the TlBr crystals: TlBr detectors with high detection efficiency for positron annihilation γ-ray (511keV) detection and TlBr detectors with high-energy resolution for low-energy X-ray detection. The detector of the former type demonstrated energy resolution of 56keV FWHM (11%) for 511keV γ-rays. Energy resolution of 1.81keV FWHM for 5.9keV was obtained from the detector of the latter type. In order to analyze noise characteristics of the detector-preamplifier assembly, the equivalent noise charge (ENC) was measured as a function of the amplifier shaping time for the high-resolution detector. This analysis shows that parallel white noise and /1/f noise were dominant noise sources in the detector system. Current-voltage characteristics of the TlBr detector with a small Peltier cooler were also measured. Significant reduction of the detector leakage current was observed for the cooled detectors.

Semiconductor detector with smoothly tunable effective thickness for the study of ionization loss by moderately relativistic electrons

NASA Astrophysics Data System (ADS)

Shchagin, A. V.; Shul'ga, N. F.; Trofymenko, S. V.; Nazhmudinov, R. M.; Kubankin, A. S.

2016-11-01

The possibility of measurement of electrons ionization loss in Si layer of smoothly tunable thickness is shown in the proof-of-principle experiment. The Si surface-barrier detector with the depleted layer thickness controlled by the value of high voltage power supply has been used. Ionization loss spectra for electrons emitted by radioactive source 207Bi are presented and discussed. Experimental results for the most probable ionization loss in the Landau spectral peak are compared with theoretical calculations. The possibility of research of evolution of electromagnetic field of ultra-relativistic particles traversing media interface with the use of detectors with smoothly tunable thickness is proposed.

Measurement of the mass attenuation coefficient from 81 keV to 1333 keV for elemental materials Al, Cu and Pb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gjorgieva, Slavica, E-mail: slavicagjorgieva89@gmail.com; Institute of Physics, Faculty of Natural Sciences and Mathematics, Ss Cyril and Methodius University, POB 162, 1000 Skopje; Barandovski, Lambe, E-mail: lambe@pmf.ukim.mk

The mass attenuation coefficients (μ/ρ) for 3 high purity elemental materials Al, Cu and Pb were measured in the γ-ray energy range from 81 keV up to 1333 keV using {sup 22}Na, {sup 60}Co {sup 133}Ba and {sup 133}Cs as sources of gamma radiation. Well shielded detector (NaI (Tl) semiconductor detector) was used to measure the intensity of the transmitted beam. The measurements were made under condition of good geometry, assuring that any photon absorbed or deflected appreciably does not reach the detector. The measured values are compared with the theoretical ones obtained by Seltzer (1993).

Electro-optic Lightning Detector

NASA Technical Reports Server (NTRS)

Koshak, William J.; Solakiewicz, Richard J.

1996-01-01

The design, alignment, calibration, and field deployment of a solid-state lightning detector is described. The primary sensing component of the detector is a potassium dihydrogen phosphate (KDP) electro-optic crystal that is attached in series to a flat plate aluminum antenna; the antenna is exposed to the ambient thundercloud electric field. A semiconductor laser diode (lambda = 685 nm), polarizing optics, and the crystal are arranged in a Pockels cell configuration. Lightning-caused electric field changes are related to small changes in the transmission of laser light through the optical cell. Several hundred lightning electric field change excursions were recorded during five thunderstorms that occurred in the summer of 1998 at the NASA Marshall Space Flight Center (MSFC) in northern Alabama.

Electro-Optic Lightning Detector

NASA Technical Reports Server (NTRS)

Koshak, Willliam; Solakiewicz, Richard

1998-01-01

The design, alignment, calibration, and field deployment of a solid-state lightning detector is described. The primary sensing component of the detector is a potassium dihydrogen phosphate (KDP) electro-optic crystal that is attached in series to a flat plate aluminum antenna; the antenna is exposed to the ambient thundercloud electric field. A semiconductor laser diode (lambda = 685 nm), polarizing optics, and the crystal are arranged in a Pockels cell configuration. Lightning-caused electric field changes are then related to small changes in the transmission of laser light through the optical cell. Several hundred lightning electric field change excursions were recorded during 4 thunderstorms that occurred in the summer of 1998 at the NASA Marshall Space Flight Center (MSFC) in Northern Alabama.

Electro-Optic Lighting Detector

NASA Technical Reports Server (NTRS)

Koshak, William J.; Solakiewicz, Richard J.

1999-01-01

The design, alignment, calibration, and field deployment of a solid-state lightning detector is described. The primary sensing component of the detector is a potassium dihydrogen phosphate electro-optic crystal that is attached in series to a flat-plate aluminum antenna; the antenna is exposed to the ambient thundercloud electric field. A semiconductor laser diode (lambda = 685 nm), polarizing optics, and the crystal are arranged in a Pockels cell configuration. Lightning-caused electric field changes are related to small changes in the transmission of laser light through the optical cell. Several hundred lightning electric field change excursions were recorded during five thunderstorms that occurred in the summer of 1998 at the NASA Marshall Space Flight Center in northern Alabama.

First Dark Matter Constraints from SuperCDMS Single-Charge Sensitive Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agnese, R.; et al.

We present the first limits on inelastic electron-scattering dark matter and dark photon absorption using a prototype SuperCDMS detector having a charge resolution of 0.1 electron-hole pairs (CDMS HVeV, a 0.93 gram CDMS HV device). These electron-recoil limits significantly improve experimental constraints on dark matter particles with masses as low as 1 MeV/more » $$\\mathrm{c^2}$$. We demonstrate a sensitivity to dark photons competitive with other leading approaches but using substantially less exposure (0.49 gram days). These results demonstrate the scientific potential of phonon-mediated semiconductor detectors that are sensitive to single electronic excitations.« less

Efficiency of depleted UO2 based semiconductor neutron detectors in direct and indirect configuration—A GEANT4 simulation study

NASA Astrophysics Data System (ADS)

Parida, M. K.; Prabakar, K.; Sundari, S. T.

2018-03-01

In the present work, Monte Carlo simulations using GEANT4 are carried out to estimate the efficiency of semiconductor neutron detectors with depleted UO2 (DUO2) as converter material, in both planar (direct and indirect) and 3D geometry (cylindrical perforation and trenches structure) configurations. The simulations were conducted for neutrons of variable energy viz., thermal (25 meV) and fast (1 to 10 MeV) that were incident on varying thicknesses (0.25 μm to 1000 μm), diameters (1 μm to 9 μm) and widths (1 μm to 9 μm) along with depths (50 μm to 275 μm) of DUO2 for planar, cylindrical perforated and trench structures, respectively. In the case of direct planar detectors, efficiency was found to increase with the thickness of DUO2 and the rate at which efficiency increased was found to follow the macroscopic fission cross section at the corresponding neutron energy. In the case of indirect planar detector, efficiency was lower as compared to direct configuration and was found to saturate beyond a thickness of ~3 μm. This saturation is explained on the basis of mean free path of neutrons in the DUO2 material. For the 3D perforated silicon detectors of cylindrical (trench) geometry, backfilled with DUO2, the efficiency for detection of thermal neutrons ~25 meV and fast neutrons ~ typical energy of 10 MeV was found to be ~0.0159% (~0.0177%) and ~0.0088% (0.0098%), respectively. These efficiency values were two (one) order values higher than planar indirect detector for thermal (fast) neutrons. Histogram plots were also obtained from the GEANT4 simulations to monitor the energy distribution of fission products in planar (direct and indirect) and 3D geometry (cylindrical and trench) configurations. These plots revealed that, for all the detector configurations, the energy deposited by the fission products are higher as compared to the typical gamma ray background. Thus, for detectors with DUO2 as converter material, higher values of low level discriminator (LLD) can be set, so as to achieve good background discrimination.

Space processing of crystalline materials: A study of known methods of electrical characterization of semiconductors: Bibliography

NASA Technical Reports Server (NTRS)

Castle, J. G.

1976-01-01

A selective bibliography is given on electrical characterization techniques for semiconductors. Emphasis is placed on noncontacting techniques for the standard electrical parameters for monitoring crystal growth in space, preferably in real time with high resolution.

Monte Carlo simulation of non-invasive glucose measurement based on FMCW LIDAR

NASA Astrophysics Data System (ADS)

Xiong, Bing; Wei, Wenxiong; Liu, Nan; He, Jian-Jun

2010-11-01

Continuous non-invasive glucose monitoring is a powerful tool for the treatment and management of diabetes. A glucose measurement method, with the potential advantage of miniaturizability with no moving parts, based on the frequency modulated continuous wave (FMCW) LIDAR technology is proposed and investigated. The system mainly consists of an integrated near-infrared tunable semiconductor laser and a detector, using heterodyne technology to convert the signal from time-domain to frequency-domain. To investigate the feasibility of the method, Monte Carlo simulations have been performed on tissue phantoms with optical parameters similar to those of human interstitial fluid. The simulation showed that the sensitivity of the FMCW LIDAR system to glucose concentration can reach 0.2mM. Our analysis suggests that the FMCW LIDAR technique has good potential for noninvasive blood glucose monitoring.

Soft gamma-ray detector for the ASTRO-H Mission

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Blandford, Roger; Enoto, Teruaki; Kataoka, Jun; Kawaharada, Madoka; Kokubun, Motohide; Laurent, Philippe; Lebrun, François; Limousin, Olivier; Madejski, Greg; Makishima, Kazuo; Mizuno, Tsunefumi; Nakamori, Takeshi; Nakazawa, Kazuhiro; Mori, Kunishiro; Odaka, Hirokazu; Ohno, Masanori; Ohta, Masayuki; Sato, Goro; Sato, Rie; Takeda, Shin'ichiro; Takahashi, Hiromitsu; Takahashi, Tadayuki; Tanaka, Takaaki; Tashiro, Makoto; Terada, Yukikatsu; Uchiyama, Hideki; Uchiyama, Yasunobu; Yamada, Shinya; Yatsu, Yoichi; Yonetoku, Daisuke; Yuasa, Takayuki

2012-09-01

ASTRO-H is the next generation JAXA X-ray satellite, intended to carry instruments with broad energy coverage and exquisite energy resolution. The Soft Gamma-ray Detector (SGD) is one of ASTRO-H instruments and will feature wide energy band (60-600 keV) at a background level 10 times better than the current instruments on orbit. The SGD is complimentary to ASTRO-H’s Hard X-ray Imager covering the energy range of 5-80 keV. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield where Compton kinematics is utilized to reject backgrounds. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and CdTe (cadmium telluride) sensors. Good energy resolution is afforded by semiconductor sensors, and it results in good background rejection capability due to better constraints on Compton kinematics. Utilization of Compton kinematics also makes the SGD sensitive to the gamma-ray polarization, opening up a new window to study properties of gamma-ray emission processes. In this paper, we will present the detailed design of the SGD and the results of the final prototype developments and evaluations. Moreover, we will also present expected performance based on the measurements with prototypes.

A Distance Detector with a Strip Magnetic MOSFET and Readout Circuit.

PubMed

Sung, Guo-Ming; Lin, Wen-Sheng; Wang, Hsing-Kuang

2017-01-10

This paper presents a distance detector composed of two separated metal-oxide semiconductor field-effect transistors (MOSFETs), a differential polysilicon cross-shaped Hall plate (CSHP), and a readout circuit. The distance detector was fabricated using 0.18 μm 1P6M Complementary Metal-Oxide Semiconductor (CMOS) technology to sense the magnetic induction perpendicular to the chip surface. The differential polysilicon CSHP enabled the magnetic device to not only increase the magnetosensitivity but also eliminate the offset voltage generated because of device mismatch and Lorentz force. Two MOSFETs generated two drain currents with a quadratic function of the differential Hall voltages at CSHP. A readout circuit-composed of a current-to-voltage converter, a low-pass filter, and a difference amplifier-was designed to amplify the current difference between two drains of MOSFETs. Measurements revealed that the electrostatic discharge (ESD) could be eliminated from the distance sensor by grounding it to earth; however, the sensor could be desensitized by ESD in the absence of grounding. The magnetic influence can be ignored if the magnetic body (human) stays far from the magnetic sensor, and the measuring system is grounded to earth by using the ESD wrist strap (Strap E-GND). Both 'no grounding' and 'grounding to power supply' conditions were unsuitable for measuring the induced Hall voltage.

Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Sha, Yi-Gao

1995-01-01

The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.

Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors

NASA Astrophysics Data System (ADS)

Mascarenhas, Angelo; Fluegel, Brian; Beaton, Dan

Semiconductor strain engineering has become a critical feature of high-performance electronics due to the significant device performance enhancements it enables. These improvements that emerge from strain induced modifications to the electronic band structure necessitate new ultra-sensitive tools for probing strain in semiconductors. Using electronic Raman scattering, we recently showed that it is possible to measure minute amounts of strain in thin semiconductor epilayers. We applied this strain measurement technique to two different semiconductor alloy systems, using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10-4. Comparing our strain sensitivity and signal strength in AlxGa1-xAs with those obtained using the industry-standard technique of phonon Raman scattering we found a sensitivity improvement of ×200, and a signal enhancement of 4 ×103 thus obviating key constraints in semiconductor strain metrology. The sensitivity of this approach rivals that of contemporary techniques and opens up a new realm for optically probing strain effects on electronic band structure. We acknowledge the financial support of the DOE Office of Science, BES under DE-AC36-80GO28308.

Demonstration of in-vivo Multi-Probe Tracker Based on a Si/CdTe Semiconductor Compton Camera

NASA Astrophysics Data System (ADS)

Takeda, Shin'ichiro; Odaka, Hirokazu; Ishikawa, Shin-nosuke; Watanabe, Shin; Aono, Hiroyuki; Takahashi, Tadayuki; Kanayama, Yousuke; Hiromura, Makoto; Enomoto, Shuichi

2012-02-01

By using a prototype Compton camera consisting of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors, originally developed for the ASTRO-H satellite mission, an experiment involving imaging multiple radiopharmaceuticals injected into a living mouse was conducted to study its feasibility for medical imaging. The accumulation of both iodinated (131I) methylnorcholestenol and 85Sr into the mouse's organs was simultaneously imaged by the prototype. This result implies that the Compton camera is expected to become a multi-probe tracker available in nuclear medicine and small animal imaging.

Superconducting active impedance converter

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Martens, Jon S.

1993-01-01

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductor allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology.

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

PubMed

Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2016-01-01

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.

Light-Emitting GaAs Nanowires on a Flexible Substrate.

PubMed

Valente, João; Godde, Tillmann; Zhang, Yunyan; Mowbray, David J; Liu, Huiyun

2018-06-18

Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core-shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices.

Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

PubMed Central

Al-Ta’ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2016-01-01

Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

Direct imaging detectors for electron microscopy

NASA Astrophysics Data System (ADS)

Faruqi, A. R.; McMullan, G.

2018-01-01

Electronic detectors used for imaging in electron microscopy are reviewed in this paper. Much of the detector technology is based on the developments in microelectronics, which have allowed the design of direct detectors with fine pixels, fast readout and which are sufficiently radiation hard for practical use. Detectors included in this review are hybrid pixel detectors, monolithic active pixel sensors based on CMOS technology and pnCCDs, which share one important feature: they are all direct imaging detectors, relying on directly converting energy in a semiconductor. Traditional methods of recording images in the electron microscope such as film and CCDs, are mentioned briefly along with a more detailed description of direct electronic detectors. Many applications benefit from the use of direct electron detectors and a few examples are mentioned in the text. In recent years one of the most dramatic advances in structural biology has been in the deployment of the new backthinned CMOS direct detectors to attain near-atomic resolution molecular structures with electron cryo-microscopy (cryo-EM). The development of direct detectors, along with a number of other parallel advances, has seen a very significant amount of new information being recorded in the images, which was not previously possible-and this forms the main emphasis of the review.

Quantification of the Conditioning Phase in Cooled Pixelated TlBr Detectors

NASA Astrophysics Data System (ADS)

Koehler, Will; He, Zhong; O'Neal, Sean; Yang, Hao; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2015-08-01

Thallium-bromide (TlBr) is currently under investigation as an alternative room-temperature semiconductor gamma-ray spectrometer due to its favorable material properties (large bandgap, high atomic numbers, and high density). Previous work has shown that 5 mm thick pixelated TlBr detectors can achieve sub-1% FWHM energy resolution at 662 keV for single-pixel events. These results are limited to - 20° C operation where detector performance is stable. During the first one to five days of applied bias at - 20° C, many TlBr detectors undergo a conditioning phase, where the energy resolution improves and the depth-dependent electron drift velocity stabilizes. In this work, the spectroscopic performance, drift velocity, and freed electron concentrations of multiple 5 mm thick pixelated TlBr detectors are monitored throughout the conditioning phase. Additionally, conditioning is performed twice on the same detector at different times to show that improvement mechanisms relax when the detector is stored without bias. We conclude that the improved spectroscopy results from internal electric field stabilization and uniformity caused by fewer trapped electrons.

Sounding-rocket experiment to study the diffuse soft X-ray background using a Si(Li) detector

NASA Technical Reports Server (NTRS)

Delvaille, J. P.

1981-01-01

Soft X-ray background in the energy range 0.4 to 10 keV was studied. A payload was developed which uses a wide angle, windowless, cooled, Si(Li) semiconductor detector system. With a resolution of less than 150 eV between 0.3 and 2.0 keV, the system is sensitive to an emission equivalent width of about 10 eV. Carbon and oxygen line emission were detected from the vicinity of the North Galactic Pole and the North Polar Spur.

Semiconductor radiation detector with internal gain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

K-band single-chip electron spin resonance detector.

PubMed

Anders, Jens; Angerhofer, Alexander; Boero, Giovanni

2012-04-01

We report on the design, fabrication, and characterization of an integrated detector for electron spin resonance spectroscopy operating at 27 GHz. The microsystem, consisting of an LC-oscillator and a frequency division module, is integrated onto a single silicon chip using a conventional complementary metal-oxide-semiconductor technology. The achieved room temperature spin sensitivity is about 10(8)spins/G Hz(1/2), with a sensitive volume of about (100 μm)(3). Operation at 77K is also demonstrated. Copyright © 2012 Elsevier Inc. All rights reserved.

Towards a microchannel-based X-ray detector with two-dimensional spatial and time resolution and high dynamic range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adams, Bernhard W.; Mane, Anil U.; Elam, Jeffrey W.

X-ray detectors that combine two-dimensional spatial resolution with a high time resolution are needed in numerous applications of synchrotron radiation. Most detectors with this combination of capabilities are based on semiconductor technology and are therefore limited in size. Furthermore, the time resolution is often realised through rapid time-gating of the acquisition, followed by a slower readout. Here, a detector technology is realised based on relatively inexpensive microchannel plates that uses GHz waveform sampling for a millimeter-scale spatial resolution and better than 100 ps time resolution. The technology is capable of continuous streaming of time- and location-tagged events at rates greatermore » than 10 7events per cm 2. Time-gating can be used for improved dynamic range.« less

Characteristic of an Organic Photodetector Fabricated With P3HT:ICBA Blending Materials for Indirect X-Ray Detection

NASA Astrophysics Data System (ADS)

Seon, Hyeji; Kim, Beomsu; Kang, Jungwon

2017-07-01

In this study, an organic conjugated polymer-based photodetector was investigated as a candidate for the indirecttype radiation detector. In order to improve the photon to charge conversion efficiency, we selected the fullerene derivative indeneC60-bisadduct (ICBA) as an n-type semiconductor. The optimal process condition was investigated while varying the P3HT:ICBA blending ratio and spin-rate. The detector at the condition of P3HT:ICBA = 3:2 blending ratio and 900 rpm spin-rate showed the highest sensitivity of 1.35 mC/Gy · cm2 and the highest PCE of 2.93%. Compared to the common P3HT:PCBM detector, the best P3HT:ICBA detector showed 27.36% enhancement of sensitivity and 27.68% enhancement of the PCE.

Harsh-Environment Solid-State Gamma Detector for Down-hole Gas and Oil Exploration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peter Sandvik; Stanislav Soloviev; Emad Andarawis

2007-08-10

The goal of this program was to develop a revolutionary solid-state gamma-ray detector suitable for use in down-hole gas and oil exploration. This advanced detector would employ wide-bandgap semiconductor technology to extend the gamma sensor's temperature capability up to 200 C as well as extended reliability, which significantly exceeds current designs based on photomultiplier tubes. In Phase II, project tasks were focused on optimization of the final APD design, growing and characterizing the full scintillator crystals of the selected composition, arranging the APD device packaging, developing the needed optical coupling between scintillator and APD, and characterizing the combined elements asmore » a full detector system preparing for commercialization. What follows is a summary report from the second 18-month phase of this program.« less

The COBRA demonstrator at the LNGS underground laboratory

NASA Astrophysics Data System (ADS)

Ebert, J.; Fritts, M.; Gehre, D.; Gößling, C.; Göpfert, T.; Hagner, C.; Heidrich, N.; Klingenberg, R.; Köttig, T.; Kröninger, K.; Michel, T.; Neddermann, T.; Nitsch, C.; Oldorf, C.; Quante, T.; Rajek, S.; Rebber, H.; Reinecke, O.; Rohatsch, K.; Schulz, O.; Sörensen, A.; Stekl, I.; Tebrügge, J.; Temminghoff, R.; Theinert, R.; Timm, J.; Wester, T.; Wonsak, B.; Zatschler, S.; Zuber, K.

2016-01-01

The COBRA demonstrator, a prototype for a large-scale experiment searching for neutrinoless double beta-decay, was built at the underground laboratory Laboratori Nazionali del Gran Sasso (LNGS) in Italy. It consists of an array of 64 monolithic, calorimetric CdZnTe semiconductor detectors with a coplanar-grid design and a total mass of 380 g. It is used to investigate the experimental challenges faced when operating CdZnTe detectors in low-background mode, to identify potential background sources and to show the long-term stability of the detectors. The first data-taking period started in 2011 with a subset of the detectors, while the demonstrator was completed in November 2013. To date, more than 250 kg d of data have been collected. This paper describes the technical details of the experimental setup and the hardware components.

Effect of an external magnetic field on the mass attenuation coefficients of p-Si and n-Si

NASA Astrophysics Data System (ADS)

Yılmaz, D.; Önder, P.

2018-05-01

In this study, the mass attenuation coefficients of p-Si and n-Si semiconductor samples have been determined in an external magnetic field. The semiconductor samples were located to the external magnetic field of intensities 0.2 T, 0.4 T, 0.6 T and 0.8 T. The samples were bombarded by 59.5 keV, 80.1 keV, 121.8 keV and 244.7 keV gamma-rays emitted from Am241, Ba133 and Eu152 radioactive sources. The transmitted photons were detected by a CdTe detector. It was observed that the mass attenuation coefficients of p-Si and n-Si semiconductor samples decrease with increasing gamma-ray energy. Also, the mass attenuation coefficients of the samples increase with applying magnetic field intensity.

Context-based automated defect classification system using multiple morphological masks

DOEpatents

Gleason, Shaun S.; Hunt, Martin A.; Sari-Sarraf, Hamed

2002-01-01

Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

Laboratory Connections--Gas Monitoring Transducers Part III: Combustible Gas Sensors.

ERIC Educational Resources Information Center

Powers, Michael H.; Dahman, Doug

1989-01-01

Describes an interface that uses semiconductor metal oxides to detect low gas concentrations. Notes the detector has long life, high stability, good reproducibility, low cost, and is able to convert the gas concentration to an electrical signal with a simple circuit. Theory, schematic, and applications are provided. (MVL)

76 FR 68434 - 36(b)(1) Arms Sales Notification

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-04

... Trainers (THT), 50 Field Handling Trainers (FHT), 2 GCU-31A/E Gas Charging Units, 110 Night Sights, 1...), 50 Field Handling Trainers (FHT), 2 GCU-31A/E Gas Charging Units, 110 Night Sights, 1 STINGER Troop... software; optical coatings; ultraviolet sensors; semi-conductor detectors infrared band sensors...

FAST NEUTRON SPECTROMETER USING SPACED SEMICONDUCTORS FOR MEASURING TOTAL ENERGY OF NEUTRONS CAPTURED

DOEpatents

Love, T.A.; Murray, R.B.

1964-04-14

A fast neutron spectrometer was designed, which utilizes a pair of opposed detectors having a layer of /sup 6/LiF between to produce alpha and T pair for each neutron captured to provide signals, which, when combined, constitute a measure of neutron energy. (AEC)

Dewetting During the Crystal Growth of (Cd,Zn)Te:In Under Microgravity

NASA Astrophysics Data System (ADS)

Sylla, Lamine; Fauler, Alex; Fiederle, Michael; Duffar, Thierry; Dieguez, Ernesto; Zanotti, Lucio; Zappettini, Andrea; Roosen, GÉrald

2009-08-01

The phenomenon of ldquodewettingrdquo associated with the Vertical Bridgman (VB) crystal growth technique leads to the growth of a crystal without contact with the crucible. One dramatic consequence of this modified VB process is the reduction of structural defects within the crystal. It has been observed in several microgravity experiments for different semiconductor crystals. This work is concentrated on the growth of high resistivity (Cd,Zn)Te:In (CZT) crystals by achieving the phenomenon of dewetting under microgravity condition and its application in the processing of CZT detectors. Two Cd0.9Zn0.1Te:In crystals were grown in space on the Russian FOTON satellite in the POLIZON-M facility in September 2007 (mission M3). At the end of the preliminary melting phase of one crystal, a Rotating Magnetic Field (RMF) was applied in order to reduce the typical tellurium clusters within the melt before the pulling. The other crystal was superheated with 20 K above the melting point before the pulling. A third reference crystal has been grown on the ground in similar thermal conditions. Profiles measurements of the space grown crystals surface gave the evidence of a successful dewetting during the crystal growth. Characterization methods such as IR microscopy and CoReMa have been performed on the three crystals. CZT detectors have been processed from the grown part of the different crystals. The influence of the dewetting on the material quality and the detector properties completes the study.

Numerical simulation of the modulation transfer function (MTF) in infrared focal plane arrays: simulation methodology and MTF optimization

NASA Astrophysics Data System (ADS)

Schuster, J.

2018-02-01

Military requirements demand both single and dual-color infrared (IR) imaging systems with both high resolution and sharp contrast. To quantify the performance of these imaging systems, a key measure of performance, the modulation transfer function (MTF), describes how well an optical system reproduces an objects contrast in the image plane at different spatial frequencies. At the center of an IR imaging system is the focal plane array (FPA). IR FPAs are hybrid structures consisting of a semiconductor detector pixel array, typically fabricated from HgCdTe, InGaAs or III-V superlattice materials, hybridized with heat/pressure to a silicon read-out integrated circuit (ROIC) with indium bumps on each pixel providing the mechanical and electrical connection. Due to the growing sophistication of the pixel arrays in these FPAs, sophisticated modeling techniques are required to predict, understand, and benchmark the pixel array MTF that contributes to the total imaging system MTF. To model the pixel array MTF, computationally exhaustive 2D and 3D numerical simulation approaches are required to correctly account for complex architectures and effects such as lateral diffusion from the pixel corners. It is paramount to accurately model the lateral di_usion (pixel crosstalk) as it can become the dominant mechanism limiting the detector MTF if not properly mitigated. Once the detector MTF has been simulated, it is directly decomposed into its constituent contributions to reveal exactly what is limiting the total detector MTF, providing a path for optimization. An overview of the MTF will be given and the simulation approach will be discussed in detail, along with how different simulation parameters effect the MTF calculation. Finally, MTF optimization strategies (crosstalk mitigation) will be discussed.

Design and development of SiGe based near-infrared photodetectors

NASA Astrophysics Data System (ADS)

Zeller, John W.; Puri, Yash R.; Sood, Ashok K.; McMahon, Shane; Efsthadiatis, Harry; Haldar, Pradeep; Dhar, Nibir K.

2014-10-01

Near-infrared (NIR) sensors operating at room temperatures are critical for a variety of commercial and military applications including detecting mortar fire and muzzle flashes. SiGe technology offers a low-cost alternative to conventional IR sensor technologies such as InGaAs, InSb, and HgCdTe for developing NIR micro-sensors that will not require any cooling and can operate with high bandwidths and comparatively low dark currents. Since Ge has a larger thermal expansion coefficient than Si, tensile strain may be incorporated into detector devices during the growth process, enabling an extended operating wavelength range above 1600 nm. SiGe based pin photodetectors have advantages of high stability, low noise, and high responsivity compared to metal-semiconductor-metal (MSM) devices. We have developed a process flow and are fabricating SiGe detector devices on 12" (300 mm) silicon wafers in order to take advantage of high throughput, large-area leading-edge silicon based CMOS technology that provides small feature sizes with associated device cost/density scaling advantages. The fabrication of the detector devices is facilitated by a two-step growth process incorporating initial low temperature growth of Ge/SiGe to form a thin strain-relaxed layer, followed by high temperature growth to deposit a thicker absorbing film, and subsequent high temperature anneal. This growth process is designed to effectively reduce dark current and enhance detector performance by reducing the number of defects and threading dislocations which form recombination centers during the growth process. Various characterization techniques have been employed to determine the properties of the epitaxially deposited Ge/SiGe layers, and the corresponding results are discussed.

A novel pixellated solid-state photon detector for enhancing the Everhart-Thornley detector.

PubMed

Chuah, Joon Huang; Holburn, David

2013-06-01

This article presents a pixellated solid-state photon detector designed specifically to improve certain aspects of the existing Everhart-Thornley detector. The photon detector was constructed and fabricated in an Austriamicrosystems 0.35 µm complementary metal-oxide-semiconductor process technology. This integrated circuit consists of an array of high-responsivity photodiodes coupled to corresponding low-noise transimpedance amplifiers, a selector-combiner circuit and a variable-gain postamplifier. Simulated and experimental results show that the photon detector can achieve a maximum transimpedance gain of 170 dBΩ and minimum bandwidth of 3.6 MHz. It is able to detect signals with optical power as low as 10 nW and produces a minimum signal-to-noise ratio (SNR) of 24 dB regardless of gain configuration. The detector has been proven to be able to effectively select and combine signals from different pixels. The key advantages of this detector are smaller dimensions, higher cost effectiveness, lower voltage and power requirements and better integration. The photon detector supports pixel-selection configurability which may improve overall SNR and also potentially generate images for different analyses. This work has contributed to the future research of system-level integration of a pixellated solid-state detector for secondary electron detection in the scanning electron microscope. Copyright © 2013 Wiley Periodicals, Inc.

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier.

PubMed

Yang, Jong-Ryul; Han, Seong-Tae; Baek, Donghyun

2017-09-09

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m² input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB.

Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier

PubMed Central

Han, Seong-Tae; Baek, Donghyun

2017-01-01

We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves the voltage responsivity and effective signal-to-noise ratio (SNR) using the subthreshold preamplifier, which is located between the differential detector device and main amplifier. The overall noise of the detector for the THz imaging system is reduced by the preamplifier because it diminishes the noise contribution of the main amplifier. The subthreshold preamplifier is self-biased by the output DC voltage of the detector core and has a dummy structure that cancels the DC offsets generated by the preamplifier itself. The 200 GHz detector fabricated using 0.25 μm CMOS technology includes a low drop-out regulator, current reference blocks, and an integrated antenna. A voltage responsivity of 2020 kV/W and noise equivalent power of 76 pW/√Hz are achieved using the detector at a gate bias of 0.5 V, respectively. The effective SNR at a 103 Hz chopping frequency is 70.9 dB with a 0.7 W/m2 input signal power density. The dynamic range of the raster-scanned THz image is 44.59 dB. PMID:28891927

Semiconductor structure and recess formation etch technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Bin; Sun, Min; Palacios, Tomas Apostol

2017-02-14

A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching processmore » stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.« less

Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

DOE PAGES

Fluegel., Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; ...

2015-05-28

In this study, the semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10 –4. Comparing our strain sensitivity andmore » signal strength in Al xGa 1–xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10 3, thus obviating key constraints in semiconductor strain metrology.« less

Electrical Characterization of Semiconductor Materials and Devices

NASA Astrophysics Data System (ADS)

Deen, M.; Pascal, Fabien

Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, digital cameras and electronic entertainment systems, to electronic instrumentation for medical diagnositics and environmental monitoring. Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials - semiconductors, conductors and dielectrics - which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input-output isolation, surface potential control and reliable operation. However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current-voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

NASA Astrophysics Data System (ADS)

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including: the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half-maximum (FWHM) across the entire dynamic range, and a noise floor about 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

PubMed Central

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2014-01-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications. PMID:25937684

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications.

PubMed

Barber, W C; Wessel, J C; Nygard, E; Iwanczyk, J S

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Technique of investigations of thermomagnetic Nernst-Ettingshausen and Maggi-Righi-Leduc effects in micro-samples at ultrahigh pressure

NASA Astrophysics Data System (ADS)

Ovsyannikov, Sergey; Shchennikov, Vladimir

2004-03-01

In the present work the novel technique of investigation of thermomagnetic effects (longitudinal and transverse Nernst-Ettingshausen effects, Maggi-Righi-Leduc effects) on semiconductor micro-samples at high pressure up to 30 GPa has been developed. The technique has been applied for characterisation of semiconductor micro-samples and minerals of VI, IV-VI, and II-VI Groups. Advantages of thermomagnetic effects over the traditional galvanomagnetic ones have been demonstrated. It has been shown that technique of thermomagnetic measurements at high pressure is a powerful tool in studying of parameters of electron structure of semiconductors and being the perspective one for any technological applications. The work was supported by the Russian Foundation for Basic Research, Gr. No. 01-02-17203.

ZnO nanofiber (NFs) growth from ZnO nanowires (NWs) by controlling growth temperature on flexible Teflon substrate by CBD technique for UV photodetector

NASA Astrophysics Data System (ADS)

Farhat, O. F.; Halim, M. M.; Ahmed, Naser M.; Qaeed, M. A.

2016-12-01

In this study, ZnO nanofibers (ZnO NFs) were successfully grown for the first time on Teflon substrates using CBD technique. The well-aligned ZnO nanorods (ZnO NRs) were transformed to ZnO nanofibers (NFs) by varying growth temperature and growth time. The high intensity and distinct growth orientation of peaks observed in the XRD spectra of the NFs indicate high crystal quality. The field emission scanning electron microscopy (FESEM) revealed high density of small diameter sized and long ZnO nanofibers (NFs) that are distributed in random directions. Raman analyses revealed a high E2 (high) peak at 436 nm, which indicates the wurtzite structure of ZnO. A flexible ZnO nanofiber (NFs)-based metal-semiconductor-metal UV detector was fabricated and analyzed for photo response and sensitivity under low power illumination (375 nm, 1.5 mW/cm2). The results showed a sensitivity of 4045% which can be considered a relatively high response and baseline recovery for UV detection.

Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

NASA Astrophysics Data System (ADS)

Marrs, Michael

A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.

Delay-Line Three-Dimensional Position Sensitive Radiation Detection

NASA Astrophysics Data System (ADS)

Jeong, Manhee

High-resistivity silicon(Si) in large volumes and with good charge carrier transport properties has been produced and achieved success as a radiation detector material over the past few years due to its relatively low cost as well as the availability of well-established processing technologies. One application of that technology is in the fabrication of various position-sensing topologies from which the incident radiation's direction can be determined. We have succeeded in developing the modeling tools for investigating different position-sensing schemes and used those tools to examine both amplitude-based and time-based methods, an assessment that indicates that fine position-sensing can be achieved with simpler readout designs than are conventionally deployed. This realization can make ubiquitous and inexpensive deployment of special nuclear materials (SNM) detecting technology becomes more feasible because if one can deploy position-sensitive semiconductor detectors with only one or two contacts per side. For this purpose, we have described the delay-line radiation detector and its optimized fabrication. The semiconductor physics were simulated, the results from which guided the fabrication of the guard ring structure and the detector electrode, both of which included metal-field-plates. The measured improvement in the leakage current was confirmed with the fabricated devices, and the structures successfully suppressed soft-breakdown. We also demonstrated that fabricating an asymmetric strip-line structure successfully minimizing the pulse shaping and increases the distance through which one can propagate the information of the deposited charge distribution. With fabricated delay-line detectors we can acquire alpha spectra (Am-241) and gamma spectra (Ba-133, Co-57 and Cd-109). The delay-line detectors can therefore be used to extract the charge information from both ion and gamma-ray interactions. Furthermore, standard charge-sensitive circuits yield high SNR pulses. The detectors and existing electronics can therefore be used to yield imaging instruments for neutron and gamma-rays, in the case of silicon. For CZT, we would prefer to utilize current sensing to be able to clearly isolate the effects of the various charge-transport non-idealities, the full realization of which awaits the fabrication of the custom-designed TIA chip.

In-vivo x-ray micro-imaging and micro-CT with the Medipix2 semiconductor detector at UniAndes

NASA Astrophysics Data System (ADS)

Caicedo, I.; Avila, C.; Gomez, B.; Bula, C.; Roa, C.; Sanabria, J.

2012-02-01

This poster contains the procedure to obtain micro-CTs and to image moving samples using the Medipix2 detector, with its corresponding results. The high granularity of the detector makes it suitable for micro-CT. We used commercial software (Octopus) to do the 3D reconstruction of the samples in the first place, and we worked on modifying free reconstruction software afterwards. Medipix has a very fast response ( ~ hundreds of nanoseconds) and high sensibility. These features allow obtaining nearly in-vivo high resolution (55m * 55m) images. We used an exposure time of 0.1 s for each frame, and the resulting images were animated. The High Energy Physics Group at UniAndes is a member of the Medipix3 collaboration. Its research activities are focused on developing set-ups for biomedical applications and particle tracking using the Medipix2 and Timepix detectors, and assessing the feasibility of the Medipix3 detector for future applications.

Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sizov, F.; Zabudsky, V.; Petryakov, V.

2015-02-23

In this paper, issues associated with the development of infrared (IR) and terahertz (THz) radiation detectors based on HgCdTe are discussed. Two-color un-cooled and cooled to 78 K narrow-gap mercury-cadmium-telluride semiconductor thin layers with antennas were considered both as sub-THz (sub-THz) direct detection bolometers and 3–10 μm IR photoconductors. The noise equivalent power (NEP) for one of the detectors studied at ν ≈ 140 GHz reaches NEP{sub 300 K} ≈ 4.5 × 10{sup −10} W/Hz{sup 1/2} and NEP{sub 78 K} ≈ 5 × 10{sup −9} W/Hz{sup 1/2}. The same detector used as an IR photoconductor showed the responsivity at temperatures T = 78 K and 300 K with signal-to-noisemore » ratio S/N ≈ 750 and 50, respectively, under illumination by using IR monochromator and globar as a thermal source.« less

Superconducting active impedance converter

DOEpatents

Ginley, D.S.; Hietala, V.M.; Martens, J.S.

1993-11-16

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductors allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology. 12 figures.

Recent development of radiation measurement instrument for industrial and medical applications

NASA Astrophysics Data System (ADS)

Baba, Sueki; Ohmori, Koichi; Mito, Yoshio; Tanoue, Toshiya; Yano, Shigeki; Tokumori, Kenji; Toyofuku, Fukai; Kanda, Shigenobu

2001-02-01

Recently, computer imaging technology has developed very high-quality image and fast processing time. X-rays have been used for many purposes such as medical diagnosis and analyzing the structure of industrial materials. However, as X-rays are hazardous to the human body, it is desirable to reduce its exposed dose to a minimum. For this purpose, it is necessary to use a semiconductor radiation detector with a high efficiency for X-rays. We have developed photon-counting CdTe array detector system for medical and industrial use. The bone densitometer for Dual Energy X-ray Absorptometry (DEXA) has been developed to make diagnosis of osteoporosis, and it is developed to analyze a material element for industrial use. Recently, we have developed a monochromatic X-ray CT using a 256 ch CdTe array detector. We found that the array detector systems are very useful for medical and industrial applications.

Identification of dopant-induced point defects and their effect on the performance of CZT detectors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Gul, Rubi; Bolotnikov, Aleksey E.; Camarda, Giuseppe S.; Cui, Yonggang; Didic, Václav; Egarievwe, Stephen U.; Hossain, Anwar; Roy, Utpal N.; Yang, Ge; James, Ralph B.

2016-09-01

In our prior research we investigated room-temperature radiation detectors (CZT, CMT, CdMgTe, CTS, among other compound semiconductors) for point defects related to different dopants and impurities. In this talk we will report on our most recent research on newly grown CZT crystals doped with In, In+Al, In+Ni, and In+Sn. The main focus will be on the study of dopant-induced point defects using deep-level current transient spectroscopy (i-DLTS). In addition the performance, ? product, gamma-ray spectral response and internal electric field of the detectors were measured and correlated with the dopant-induced point defects and their concentrations. Characterization of the detectors was carried out using i-DLTS for the point defects, Pockels effect for the internal electric-field distribution, and γ-ray spectroscopy for the spectral properties.

Quantum interference in heterogeneous superconducting-photonic circuits on a silicon chip.

PubMed

Schuck, C; Guo, X; Fan, L; Ma, X; Poot, M; Tang, H X

2016-01-21

Quantum information processing holds great promise for communicating and computing data efficiently. However, scaling current photonic implementation approaches to larger system size remains an outstanding challenge for realizing disruptive quantum technology. Two main ingredients of quantum information processors are quantum interference and single-photon detectors. Here we develop a hybrid superconducting-photonic circuit system to show how these elements can be combined in a scalable fashion on a silicon chip. We demonstrate the suitability of this approach for integrated quantum optics by interfering and detecting photon pairs directly on the chip with waveguide-coupled single-photon detectors. Using a directional coupler implemented with silicon nitride nanophotonic waveguides, we observe 97% interference visibility when measuring photon statistics with two monolithically integrated superconducting single-photon detectors. The photonic circuit and detector fabrication processes are compatible with standard semiconductor thin-film technology, making it possible to implement more complex and larger scale quantum photonic circuits on silicon chips.

Upconversion single-microbelt photodetector via two-photon absorption simultaneous

NASA Astrophysics Data System (ADS)

Lou, Guanlin; Wu, Yanyan; Zhu, Hai; Li, Jinyu; Chen, Anqi; Chen, Zhiyang; Liang, Yunfeng; Ren, Yuhao; Gui, Xuchun; Zhong, Dingyong; Qiu, Zhiren; Tang, Zikang; Su, Shi C.

2018-05-01

Single microbelt (MB) photodetectors with metal–semiconductor-metal structure have been demonstrated and characterized comprehensively. For single-photon absorption, the maximum responsivity of ZnO-MB photodetector can reach as high as 1.4  ×  105 A W‑1 at 20 V bias. The results about photoresponse of MB-detector reveals that two relaxation mechanisms contribute to the carrier decay time. Moreover, the two-photon absorption upconversion photoresponsivity in the single-MB detector has also been realized, which is the first report about the two-photon absorption detector to the best of our knowledge. The excellent two-photon absorption photoresponsivity characteristic of the MB device can be available not only for detector but also for solar cell and biomedical imaging. The above results present a significant step towards future fabrication of single micro/nano-structure based multiphoton excitation optoelectronic devices.

An experiment to study the nuclear component of primary cosmic rays

NASA Technical Reports Server (NTRS)

Paul, J. M.; Verma, S. D.

1971-01-01

An apparatus has been designed and is being fabricated to study the charge composition, fluxes, and energy spectra of light nuclei in the energy region from 1 GeV to 100 GeV. The apparatus essentially consists of an array of a large number of particle detectors operated in coincidence and serving as a charged particle telescope. A mosaic silicon semiconductor detector, a plastic scintillation counter and a lucite Cerenkov detector are used to measure the charges of the incident nuclei. Two one-inch thick CsI detectors are used to study low energy particles. An ionization spectrometer is utilized to measure primary energies in the 1 to 100 GeV energy interval. A gas Cerenkov counter is being designed to distinguish between electrons and protons. It is planned to calibrate the apparatus at an accelerator using particles of known energy.

CMOS array design automation techniques. [metal oxide semiconductors

NASA Technical Reports Server (NTRS)

Ramondetta, P.; Feller, A.; Noto, R.; Lombardi, T.

1975-01-01

A low cost, quick turnaround technique for generating custom metal oxide semiconductor arrays using the standard cell approach was developed, implemented, tested and validated. Basic cell design topology and guidelines are defined based on an extensive analysis that includes circuit, layout, process, array topology and required performance considerations particularly high circuit speed.

Development of TlBr detectors for PET imaging.

PubMed

Ariño-Estrada, Gerard; Du, Junwei; Kim, Hadong; Cirignano, Leonard J; Shah, Kanai S; Cherry, Simon R; Mitchell, Gregory S

2018-05-04

Thallium bromide (TlBr) is a promising semiconductor detector material for positron emission tomography (PET) because it can offer very good energy resolution and 3-D segmentation capabilities, and it also provides detection efficiency surpassing that of commonly used scintillators. Energy, timing, and spatial resolution were measured for thin (<1 mm) TlBr detectors. The energy and timing resolution were measured simultaneously for the same planar 0.87 mm-thick TlBr device. An energy resolution of (6.41.3)% at 511 keV was achieved at -400 V bias voltage and at room temperature. A timing resolution of (27.84.1) ns FWHM was achieved for the same operating conditions when appropriate energy gating was applied. The intrinsic spatial resolution was measured to be 0.9 mm FWHM for a TlBr detector with metallic strip contacts of 0.5 mm pitch. As material properties improve, higher bias voltage should improve timing performance. A stack of thin detectors with finely segmented readout can create a modular detector with excellent energy and spatial resolution for PET applications. . © 2018 Institute of Physics and Engineering in Medicine.

SPECT detectors: the Anger Camera and beyond

PubMed Central

Peterson, Todd E.; Furenlid, Lars R.

2011-01-01

The development of radiation detectors capable of delivering spatial information about gamma-ray interactions was one of the key enabling technologies for nuclear medicine imaging and, eventually, single-photon emission computed tomography (SPECT). The continuous NaI(Tl) scintillator crystal coupled to an array of photomultiplier tubes, almost universally referred to as the Anger Camera after its inventor, has long been the dominant SPECT detector system. Nevertheless, many alternative materials and configurations have been investigated over the years. Technological advances as well as the emerging importance of specialized applications, such as cardiac and preclinical imaging, have spurred innovation such that alternatives to the Anger Camera are now part of commercial imaging systems. Increased computing power has made it practical to apply advanced signal processing and estimation schemes to make better use of the information contained in the detector signals. In this review we discuss the key performance properties of SPECT detectors and survey developments in both scintillator and semiconductor detectors and their readouts with an eye toward some of the practical issues at least in part responsible for the continuing prevalence of the Anger Camera in the clinic. PMID:21828904

Planetary Surface Exploration Using Time-Resolved Laser Spectroscopy on Rovers and Landers

NASA Astrophysics Data System (ADS)

Blacksberg, Jordana; Alerstam, Erik; Maruyama, Yuki; Charbon, Edoardo; Rossman, George

2013-04-01

Planetary surface exploration using laser spectroscopy has become increasingly relevant as these techniques become a reality on Mars surface missions. The ChemCam instrument onboard the Curiosity rover is currently using laser induced breakdown spectroscopy (LIBS) on a mast-mounted platform to measure elemental composition of target rocks. The RLS Raman Spectrometer is included on the payload for the ExoMars mission to be launched in 2018 and will identify minerals and organics on the Martian surface. We present a next-generation instrument that builds on these widely used techniques to provide a means for performing both Raman spectroscopy and LIBS in conjunction with microscopic imaging. Microscopic Raman spectroscopy with a laser spot size smaller than the grains of interest can provide surface mapping of mineralogy while preserving morphology. A very small laser spot size (~ 1 µm) is often necessary to identify minor phases that are often of greater interest than the matrix phases. In addition to the difficulties that can be posed by fine-grained material, fluorescence interference from the very same material is often problematic. This is particularly true for many of the minerals of interest that form in environments of aqueous alteration and can be highly fluorescent. We use time-resolved laser spectroscopy to eliminate fluorescence interference that can often make it difficult or impossible to obtain Raman spectra. As an added benefit, we have found that with small changes in operating parameters we can include microscopic LIBS using the same hardware. This new technique relies on sub-ns, high rep-rate lasers with relatively low pulse energy and compact solid state detectors with sub-ns time resolution. The detector technology that makes this instrument possible is a newly developed Single-Photon Avalanche Diode (SPAD) sensor array based on Complementary Metal-Oxide Semiconductor (CMOS) technology. The use of this solid state time-resolved detector offers a significant reduction in size, weight, power, and overall complexity - making time resolved detection feasible for planetary applications. We will discuss significant advances leading to the feasibility of a compact time-resolved spectrometer. We will present results on planetary analog minerals to demonstrate the instrument performance including fluorescence rejection and combined Raman-LIBS capability.

HgCdTe liquid phase epitaxy - An overview

NASA Astrophysics Data System (ADS)

Castro, C. A.; Korenstein, R.

1982-08-01

Techniques and results of using liquid phase epitaxy (LPE) to form crystalline thin HgCdTe films for industrial-scale applications in IR detectors and focal plane arrays are discussed. Varying the mole fraction of CdTe in HgCdTe is noted to permit control of the bandwidth. LPE-grown films are noted to have a low carrier concentration, on the order of 4 x 10 to the 14th to 5 x 10 to the 15th/cu cm, a good surface morphology and be amenable to production scale-up. Details of the isothermal, equilibrium cooling, and supersaturation cooling LPE growth modes are reviewed, noting the necessity of developing a reliable method for determining the liquidus temperature for all modes to maintain uniformity of film growth from batch to batch. Mechanical steps can be either dipping the substrate into the melt or the slider boat approach, which is used in the production of compound semiconductors.

High speed photography, videography, and photonics III; Proceedings of the Meeting, San Diego, CA, August 22, 23, 1985

NASA Technical Reports Server (NTRS)

Ponseggi, B. G. (Editor); Johnson, H. C. (Editor)

1985-01-01

Papers are presented on the picosecond electronic framing camera, photogrammetric techniques using high-speed cineradiography, picosecond semiconductor lasers for characterizing high-speed image shutters, the measurement of dynamic strain by high-speed moire photography, the fast framing camera with independent frame adjustments, design considerations for a data recording system, and nanosecond optical shutters. Consideration is given to boundary-layer transition detectors, holographic imaging, laser holographic interferometry in wind tunnels, heterodyne holographic interferometry, a multispectral video imaging and analysis system, a gated intensified camera, a charge-injection-device profile camera, a gated silicon-intensified-target streak tube and nanosecond-gated photoemissive shutter tubes. Topics discussed include high time-space resolved photography of lasers, time-resolved X-ray spectrographic instrumentation for laser studies, a time-resolving X-ray spectrometer, a femtosecond streak camera, streak tubes and cameras, and a short pulse X-ray diagnostic development facility.

Planar-integrated single-crystalline perovskite photodetectors

PubMed Central

Saidaminov, Makhsud I.; Adinolfi, Valerio; Comin, Riccardo; Abdelhady, Ahmed L.; Peng, Wei; Dursun, Ibrahim; Yuan, Mingjian; Hoogland, Sjoerd; Sargent, Edward H.; Bakr, Osman M.

2015-01-01

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors. PMID:26548941

Implementation of in vivo Dosimetry with Isorad{sup TM} Semiconductor Diodes in Radiotherapy Treatments of the Pelvis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodriguez, Miguel L.; Abrego, Eladio; Pineda, Amalia

2008-04-01

This report describes the results obtained with the Isorad{sup TM} (Red) semiconductor detectors for implementing an in vivo dosimetry program in patients subject to radiotherapy treatment of the pelvis. Four n-type semiconductor diodes were studied to characterize them for the application. The diode calibration consisted of establishing reading-to-dose conversion factors in reference conditions and a set of correction factors accounting for deviations of the diode response in comparison to that of an ion chamber. Treatments of the pelvis were performed by using an isocentric 'box' technique employing a beam of 18 MV with the shape of the fields defined bymore » a multileaf collimator. The method of Rizzotti-Leunen was used to assess the dose at the isocenter based on measurements of the in vivo dose at the entrance and at the exit of each radiation field. The in vivo dose was evaluated for a population of 80 patients. The diodes exhibit good characteristics for their use in in vivo dosimetry; however, the high attenuation of the beam ({approx}12% at 5.0-cm depth) produced, and some important correction factors, must be taken into account. The correction factors determined, including the source-to-surface factor, were within a range of {+-}4%. The frequency histograms of the relative difference between the expected and measured doses at the entrance, the exit, and the isocenter, have mean values and standard deviations of -0.09% (2.18%), 0.77% (2.73%), and -0.11% (1.76%), respectively. The method implemented has proven to be very useful in the assessment of the in vivo dose in this kind of treatment.« less

Tomographic Small-Animal Imaging Using a High-Resolution Semiconductor Camera

PubMed Central

Kastis, GA; Wu, MC; Balzer, SJ; Wilson, DW; Furenlid, LR; Stevenson, G; Barber, HB; Barrett, HH; Woolfenden, JM; Kelly, P; Appleby, M

2015-01-01

We have developed a high-resolution, compact semiconductor camera for nuclear medicine applications. The modular unit has been used to obtain tomographic images of phantoms and mice. The system consists of a 64 x 64 CdZnTe detector array and a parallel-hole tungsten collimator mounted inside a 17 cm x 5.3 cm x 3.7 cm tungsten-aluminum housing. The detector is a 2.5 cm x 2.5 cm x 0.15 cm slab of CdZnTe connected to a 64 x 64 multiplexer readout via indium-bump bonding. The collimator is 7 mm thick, with a 0.38 mm pitch that matches the detector pixel pitch. We obtained a series of projections by rotating the object in front of the camera. The axis of rotation was vertical and about 1.5 cm away from the collimator face. Mouse holders were made out of acrylic plastic tubing to facilitate rotation and the administration of gas anesthetic. Acquisition times were varied from 60 sec to 90 sec per image for a total of 60 projections at an equal spacing of 6 degrees between projections. We present tomographic images of a line phantom and mouse bone scan and assess the properties of the system. The reconstructed images demonstrate spatial resolution on the order of 1–2 mm. PMID:26568676

Monte Carlo simulation of semiconductor detector response to (222)Rn and (220)Rn environments.

PubMed

Irlinger, J; Trinkl, S; Wielunksi, M; Tschiersch, J; Rühm, W

2016-07-01

A new electronic radon/thoron monitor employing semiconductor detectors based on a passive diffusion chamber design has been recently developed at the Helmholtz Zentrum München (HMGU). This device allows for acquisition of alpha particle energy spectra, in order to distinguish alpha particles originating from radon and radon progeny decays, as well as those originating from thoron and its progeny decays. A Monte-Carlo application is described which uses the Geant4 toolkit to simulate these alpha particle spectra. Reasonable agreement between measured and simulated spectra were obtained for both (220)Rn and (222)Rn, in the energy range between 1 and 10 MeV. Measured calibration factors could be reproduced by the simulation, given the uncertainties involved in the measurement and simulation. The simulated alpha particle spectra can now be used to interpret spectra measured in mixed radon/thoron atmospheres. The results agreed well with measurements performed in both radon and thoron gas environments. It is concluded that the developed simulation allows for an accurate prediction of calibration factors and alpha particle energy spectra. Copyright © 2016 Elsevier Ltd. All rights reserved.

Nanoscale observation of organic thin film by atomic force microscopy

NASA Astrophysics Data System (ADS)

Mochizuki, Shota; Uruma, Takeshi; Satoh, Nobuo; Saravanan, Shanmugam; Soga, Tetsuo

2017-08-01

Organic photovoltaics (OPVs) fabricated using organic semiconductors and hybrid solar cells (HSCs) based on organic semiconductors/quantum dots (QDs) have been attracting significant attention owing to their potential use in low-cost solar energy-harvesting applications and flexible, light-weight, colorful, large-area devices. In this study, we observed and evaluated the surface of a photoelectric conversion layer (active layer) of the OPVs and HSCs based on phenyl-C61-butyric acid methyl ester (PCBM), poly(3-hexylthiophene) (P3HT), and zinc oxide (ZnO) nanoparticles. The experiment was performed using atomic force microscopy (AFM) combined with a frequency modulation detector (FM detector) and a contact potential difference (CPD) detection circuit. We experimentally confirmed the changes in film thickness and surface potential, as affected by the ZnO nanoparticle concentration. From the experimental results, we confirmed that ZnO nanoparticles possibly affect the structures of PCBM and P3HT. Also, we prepared an energy band diagram on the basis of the observation results, and analyzed the energy distribution inside the active layer.

Low leakage current Ni/CdZnTe/In diodes for X/ γ-ray detectors

NASA Astrophysics Data System (ADS)

Sklyarchuk, V. M.; Gnatyuk, V. A.; Pecharapa, W.

2018-01-01

The electrical characteristics of the Ni/Cd1-xZnxTe/In structures with a metal-semiconductor rectifying contact are investigated. The diodes, fabricated on the base of In-doped n-type Cd1-xZnxTe (CZT) crystals with resistivity of ∼1010 Ω ṡ cm, have low leakage current and can be used as X/ γ-ray detectors. The rectifying contact was obtained by vacuum deposition of Ni on the semiconductor surface pretreated with argon plasma. The high barrier rectifying contact allowed us to increase applied reverse bias voltage up to 2500 V at the CZT crystal thickness of 1 mm. Dark (leakage) currents of the diodes with the rectifying contact area of 4 mm2 did not exceed 3-5 nA at bias voltage of 2000 V and room temperature. The charge transport mechanisms in the Ni/CZT/In structures have been interpreted as generation-recombination in the space charge region within the range of reverse bias of 5-100 V and as currents limited by space charge at both forward and reverse bias at V >100 V.

The FOXSI sounding rocket: Latest analysis and results

NASA Astrophysics Data System (ADS)

Buitrago-Casas, Juan Camilo; Glesener, Lindsay; Christe, Steven; Krucker, Sam; Ishikawa, Shin-Nosuke; Takahashi, Tadayuki; Ramsey, Brian; Han, Raymond

2016-05-01

Hard X-ray (HXR) observations are a linchpin for studying particle acceleration and hot thermal plasma emission in the solar corona. Current and past indirectly imaging instruments lack the sensitivity and dynamic range needed to observe faint HXR signatures, especially in the presences of brighter sources. These limitations are overcome by using HXR direct focusing optics coupled with semiconductor detectors. The Focusing Optics X-ray Solar Imager (FOXSI) sounding rocket experiment is a state of the art solar telescope that develops and applies these capabilities.The FOXSI sounding rocket has successfully flown twice, observing active regions, microflares, and areas of the quiet-Sun. Thanks to its far superior imaging dynamic range, FOXSI performs cleaner hard X-ray imaging spectroscopy than previous instruments that use indirect imaging methods like RHESSI.We present a description of the FOXSI rocket payload, paying attention to the optics and semiconductor detectors calibrations, as well as the upgrades made for the second flight. We also introduce some of the latest FOXSI data analysis, including imaging spectroscopy of microflares and active regions observed during the two flights, and the differential emission measure distribution of the nonflaring corona.

Interview with Paul W. Kruse on the Early History of HgCdTe, Conducted on October 22, 1980

NASA Astrophysics Data System (ADS)

Reine, Marion B.

2015-09-01

This paper presents an interview with Dr Paul W. Kruse (1927-2012) on the early history of the semiconductor alloy mercury cadmium telluride (HgCdTe or Hg1- x Cd x Te) at the Honeywell Corporate Research Center near Minneapolis, Minnesota. Conducted on October 22, 1980, the interview covers two main areas. One area is the story of how the HgCdTe research effort came about at the Honeywell Research Center in the early 1960s, what technical choices were made and when, and what technical challenges were overcome and how. The other area is the organization, culture, environment and personnel at the Honeywell Research Center that made the early HgCdTe research programs so successful. HgCdTe has emerged as the highest-performance, most widely applicable infrared detector material. HgCdTe continues to satisfy a broad variety of advanced military and space applications. It is illustrative to look back on the early history of this remarkable semiconductor alloy to help to understand why its technological development as an infrared detector has been so successful.

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

PubMed Central

Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

2013-01-01

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739

The millimeter wave super-Schottky diode detector

NASA Technical Reports Server (NTRS)

Silver, A. H.; Pedersen, R. J.; Mccoll, M.; Dickman, R. L.; Wilson, W. J.

1981-01-01

The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.

Concept of a charged fusion product diagnostic for NSTX.

PubMed

Boeglin, W U; Valenzuela Perez, R; Darrow, D S

2010-10-01

The concept of a new diagnostic for NSTX to determine the time dependent charged fusion product emission profile using an array of semiconductor detectors is presented. The expected time resolution of 1-2 ms should make it possible to study the effect of magnetohydrodynamics and other plasma activities (toroidal Alfvén eigenmodes (TAE), neoclassical tearing modes (NTM), edge localized modes (ELM), etc.) on the radial transport of neutral beam ions. First simulation results of deuterium-deuterium (DD) fusion proton yields for different detector arrangements and methods for inverting the simulated data to obtain the emission profile are discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minami, R., E-mail: minami@prc.tsukuba.ac.jp; Imai, T.; Kariya, T.

Temporally and spatially resolved soft x-ray and end-loss-electron analyses of the electron cyclotron heated plasmas are carried out by using a semiconductor detector array and an electrostatic energy analyzer in the GAMMA 10 tandem mirror. The flux and the energy spectrum of the end loss electrons are measured by a multi-grid energy analyzer. Recently, the electron cyclotron heating power modulation experiments have been started in order to generate and control the high heat flux and to make the edge localized mode-like intermittent heat load pattern for the divertor simulation studies by the use of these detectors for electron properties.

Photon detector system

DOEpatents

Ekstrom, Philip A.

1981-01-01

A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

NASA Astrophysics Data System (ADS)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

The stability of TlBr detectors at low temperature

NASA Astrophysics Data System (ADS)

Dönmez, Burçin; He, Zhong; Kim, Hadong; Cirignano, Leonard J.; Shah, Kanai S.

2010-11-01

Thallium bromide (TlBr) is a promising semiconductor detector material due to its high atomic number (Tl: 81, Br: 35), high density (7.56 g/cm 3) and wide band gap (2.68 eV). Current TlBr detectors suffer from polarization, which causes performance degradation over time when high voltage is applied. A 4.6-mm thick TlBr detector with pixellated anodes made by Radiation Monitoring Devices Inc. was used in the experiments. The detector has a planar cathode and nine anode pixels surrounded by a guard ring. The pixel pitch is 1.0-mm. Digital pulse waveforms of preamplifier outputs were recorded using a multi-channel GaGe PCI digitizer board for pulse shaping. Several experiments were carried out at -20 °C while the detector was under bias for over a month. No polarization effect was observed and the detector's spectroscopic performance improved over time. Energy resolution of 1.5% FWHM at 662 keV has been measured without depth correction at -2000 V cathode bias. Average electron mobility-lifetime of (5.7±0.8) ×10 -3 cm 2/V has been measured from four anode pixels.

A Cryogenic Detector Characterization Facility in the Shallow Underground Laboratory at the Technical University of Munich

NASA Astrophysics Data System (ADS)

Langenkämper, A.; Defay, X.; Ferreiro Iachellini, N.; Kinast, A.; Lanfranchi, J.-C.; Lindner, E.; Mancuso, M.; Mondragón, E.; Münster, A.; Ortmann, T.; Potzel, W.; Schönert, S.; Strauss, R.; Ulrich, A.; Wawoczny, S.; Willers, M.

2018-04-01

The Physics Department of the Technical University of Munich operates a shallow underground detector laboratory in Garching, Germany. It provides ˜ 160 {m^2} of laboratory space which is shielded from cosmic radiation by ˜ 6 m of gravel and soil, corresponding to a shielding of ˜ 15 {m.w.e.} . The laboratory also houses a cleanroom equipped with work- and wetbenches, a chemical fumehood as well as a spin-coater and a mask-aligner for photolithographic processing of semiconductor detectors. Furthermore, the shallow underground laboratory runs two high-purity germanium detector screening stations, a liquid argon cryostat and a ^3 He-^4 He dilution refrigerator with a base temperature of ≤ 12-14 mK . The infrastructure provided by the shallow laboratory is particularly relevant for the characterization of CaWO_4 target crystals for the CRESST-III experiment, detector fabrication and assembly for rare event searches. Future applications of the laboratory include detector development in the framework of coherent neutrino nucleus scattering experiments (ν -cleus) and studying its potential as a site to search for MeV-scale dark matter with gram-scale cryogenic detectors.

Semiconductor Laser Multi-Spectral Sensing and Imaging

PubMed Central

Le, Han Q.; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers. PMID:22315555

Semiconductor laser multi-spectral sensing and imaging.

PubMed

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire

NASA Astrophysics Data System (ADS)

Wang, Xingfu; Zhang, Yong; Chen, Xinman; He, Miao; Liu, Chao; Yin, Yian; Zou, Xianshao; Li, Shuti

2014-09-01

Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage.Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage. Electronic supplementary information (ESI) available: Details of the EDS and SAED data, supplementary results of the UV detector, and the discussion of the transport properties of the MSM Schottky contact devices. See DOI: 10.1039/c4nr03581j

A low-power CMOS trans-impedance amplifier for FM/cw ladar imaging system

NASA Astrophysics Data System (ADS)

Hu, Kai; Zhao, Yi-qiang; Sheng, Yun; Zhao, Hong-liang; Yu, Hai-xia

2013-09-01

A scannerless ladar imaging system based on a unique frequency modulation/continuous wave (FM/cw) technique is able to entirely capture the target environment, using a focal plane array to construct a 3D picture of the target. This paper presents a low power trans-impedance amplifier (TIA) designed and implemented by 0.18 μm CMOS technology, which is used in the FM/cw imaging ladar with a 64×64 metal-semiconductor-metal(MSM) self-mixing detector array. The input stage of the operational amplifier (op amp) in TIA is realized with folded cascade structure to achieve large open loop gain and low offset. The simulation and test results of TIA with MSM detectors indicate that the single-end trans-impedance gain is beyond 100 kΩ, and the -3 dB bandwidth of Op Amp is beyond 60 MHz. The input common mode voltage ranges from 0.2 V to 1.5 V, and the power dissipation is reduced to 1.8 mW with a supply voltage of 3.3 V. The performance test results show that the TIA is a candidate for preamplifier of the read-out integrated circuit (ROIC) in the FM/cw scannerless ladar imaging system.

Neutron flux measurements using scintillator-photodiode-preamplifier system and new types of scintillators

NASA Astrophysics Data System (ADS)

Ryzhikov, Vladimir D.; Burachas, S. F.; Volkov, V. G.; Danshin, Evgeniy A.; Lisetskaya, Elena K.; Piven, L. A.; Svishch, Vladimir M.; Chernikov, Vyacheslav V.; Filimonov, A. E.

1997-02-01

After the Chernobyl catastrophe among the problems of current concern a question arose of detection of 'hot' particles formed from plutonium alloys with carbon, nitrogen, silicon, etc. For this purpose, the instruments are needed, which would be able to detect not only alpha- particles and low energy gamma-radiation, but also neutrons and high energy gamma-quanta from ((alpha) , n(gamma) ) - reactions. At present for each kind of radiation detectors of different types are used. A general drawback of all these instruments is their narrow dynamic range of dose rates and energies, and especially impossibility to registrate n-flux in condition large background activity gamma-rays nuclei, which makes each of them applicable only under certain specific conditions. For detection of 'hot' particles, oxide and semiconductor scintillators were used, which contained elements with large capture cross section for thermal neutrons. In this paper we try to determine possibilities and limitations of solid-state neutron detectors based on CdS(Te), ZnSe(Te), CdWO4 (CWO), Gd2SiO5 (GSO) scintillators developed and produced by the Science and Technology Center for Radiation Instruments of the Institute for Single Crystals. The instruments developed by Center are based preferable on a very promising system 'scintillator- photodiode-preamplifier' matched with modern computer data processing techniques.

Experimental characterization of HOTNES: A new thermal neutron facility with large homogeneity area

NASA Astrophysics Data System (ADS)

Bedogni, R.; Sperduti, A.; Pietropaolo, A.; Pillon, M.; Pola, A.; Gómez-Ros, J. M.

2017-01-01

A new thermal neutron irradiation facility, called HOTNES (HOmogeneous Thermal NEutron Source), was established in the framework of a collaboration between INFN-LNF and ENEA-Frascati. HOTNES is a polyethylene assembly, with about 70 cmx70 cm square section and 100 cm height, including a large, cylindrical cavity with diameter 30 cm and height 70 cm. The facility is supplied by a 241Am-B source located at the bottom of this cavity. The facility was designed in such a way that the iso-thermal-fluence surfaces, characterizing the irradiation volume, coincide with planes parallel to the cavity bottom. The thermal fluence rate across a given isofluence plane is as uniform as 1% on a disk with 30 cm diameter. Thermal fluence rate values from about 700 cm-2 s-1 to 1000 cm-2 s-1 can be achieved. The facility design, previously optimized by Monte Carlo simulation, was experimentally verified. The following techniques were used: gold activation foils to assess the thermal fluence rate, semiconductor-based active detector for mapping the irradiation volume, and Bonner Sphere Spectrometer to determine the complete neutron spectrum. HOTNES is expected to be attractive for the scientific community involved in neutron metrology, neutron dosimetry and neutron detector testing.

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin`ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Atsushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

2014-11-01

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60-600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm×12 cm×12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0-2.0 keV (FWHM) at 60 keV and 1.6-2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

DOEpatents

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

Reflection technique for thermal mapping of semiconductors

DOEpatents

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Noncontact, Electrode-free Capacitance/Voltage Measurement Based on General Theory of Metal-Oxide-Semiconductor (MOS) Structure

NASA Astrophysics Data System (ADS)

Sakai, Takamasa; Kohno, Motohiro; Hirae, Sadao; Nakatani, Ikuyoshi; Kusuda, Tatsufumi

1993-09-01

In this paper, we discussed a novel approach to semiconductor surface inspection, which is analysis using the C--V curve measured in a noncontact method by the metal-air-semiconductor (MAIS) technique. A new gap sensing method using the so-called Goos-Haenchen effect was developed to achieve the noncontact C--V measurement. The MAIS technique exhibited comparable sensitivity and repeatability to those of conventional C--V measurement, and hence, good reproducibility and resolution for quantifying the electrically active impurity on the order of 1× 109/cm2, which is better than most spectrometric techniques, such as secondary ion mass spectroscopy (SIMS), electron spectroscopy for chemical analysis (ESCA) and Auger electron spectrocopy (AES) which are time-consuming and destructive. This measurement without preparation of any electrical contact metal electrode suggested, for the first time, the possibility of measuring an intrinsic characteristic of the semiconductor surface, using the examples of a concrete examination.

The MSFC complementary metal oxide semiconductor (including multilevel interconnect metallization) process handbook

NASA Technical Reports Server (NTRS)

Bouldin, D. L.; Eastes, R. W.; Feltner, W. R.; Hollis, B. R.; Routh, D. E.

1979-01-01

The fabrication techniques for creation of complementary metal oxide semiconductor integrated circuits at George C. Marshall Space Flight Center are described. Examples of C-MOS integrated circuits manufactured at MSFC are presented with functional descriptions of each. Typical electrical characteristics of both p-channel metal oxide semiconductor and n-channel metal oxide semiconductor discrete devices under given conditions are provided. Procedures design, mask making, packaging, and testing are included.

Front End Spectroscopy ASIC for Germanium Detectors

NASA Astrophysics Data System (ADS)

Wulf, Eric

Large-area, tracking, semiconductor detectors with excellent spatial and spectral resolution enable exciting new access to soft (0.2-5 MeV) gamma-ray astrophysics. The improvements from semiconductor tracking detectors come with the burden of high density of strips and/or pixels that require high-density, low-power, spectroscopy quality readout electronics. CMOS ASIC technologies are a natural fit to this requirement and have led to high-quality readout systems for all current semiconducting tracking detectors except for germanium detectors. The Compton Spectrometer and Imager (COSI), formerly NCT, at University of California Berkeley and the Gamma-Ray Imager/Polarimeter for Solar flares (GRIPS) at Goddard Space Flight Center utilize germanium cross-strip detectors and are on the forefront of NASA's Compton telescope research with funded missions of long duration balloon flights. The development of a readout ASIC for germanium detectors would allow COSI to replace their discrete electronics readout and would enable the proposed Gamma-Ray Explorer (GRX) mission utilizing germanium strip-detectors. We propose a 3-year program to develop and test a germanium readout ASIC to TRL 5 and to integrate the ASIC readout onto a COSI detector allowing a TRL 6 demonstration for the following COSI balloon flight. Our group at NRL led a program, sponsored by another government agency, to produce and integrate a cross-strip silicon detector ASIC, designed and fabricated by Dr. De Geronimo at Brookhaven National Laboratory. The ASIC was designed to handle the large (>30 pF) capacitance of three 10 cm^2 detectors daisy-chained together. The front-end preamplifier, selectable inverter, shaping times, and gains make this ASIC compatible with a germanium cross-strip detector as well. We therefore have the opportunity and expertise to leverage the previous investment in the silicon ASIC for a new mission. A germanium strip detector ASIC will also require precise timing of the signals at the anode and cathode of the device to allow the depth of the interaction within the crystal to be determined. Dr. De Geronimo has developed similar timing circuits for CZT detector ASICs. Furthermore, the timing circuitry of the ASIC is at the very end of the analog section, simplifying and mitigating risks in the redesign. In the first year, we propose to tweak the gain settings and to add timing to the silicon ASIC to match the requirements of a germanium detector. The design specifications of the ASIC will include advice from our collaborators Dr. Boggs from COSI and Dr. Shih from GRIPS. By using a master ASIC designer to integrate his proven front-end and back-end with only minor modifications, we are maximizing the probability of success. NRL has a commercial cross-strip germanium detector with 30 pF of capacitance per strip, including the flex circuit from the detector to the outside of the cryostat. The COSI and GRIPS detectors have a similar capacitance per strip on the outside of their mechanically cooled cryostat. The second year of the program will be devoted to testing the newly fabricated germanium cross-strip ASIC with the NRL germanium detector. At the end of the second year, NASA will have a TRL 5 ASIC for germanium detectors, allowing future missions, including COSI, GRX, and GRIPS, to operate within their thermal and electrical envelopes. At the end of the third year, a detector on COSI will be instrumented with the new ASIC allowing for a TRL 6 demonstration during the following COSI balloon flight.

Zinc Alloys for the Fabrication of Semiconductor Devices

NASA Technical Reports Server (NTRS)

Ryu, Yungryel; Lee, Tae S.

2009-01-01

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and visible transmitters and detectors, high-frequency radar, biomedical imaging, chemical compound identification, molecular identification and structure, gas sensors, imaging systems, and for the fundamental studies of atoms, molecules, gases, vapors, and solids.

Detectors

DOEpatents

Orr, Christopher Henry; Luff, Craig Janson; Dockray, Thomas; Macarthur, Duncan Whittemore; Bounds, John Alan; Allander, Krag

2002-01-01

The apparatus and method provide techniques through which both alpha and beta emission determinations can be made simultaneously using a simple detector structure. The technique uses a beta detector covered in an electrically conducting material, the electrically conducting material discharging ions generated by alpha emissions, and as a consequence providing a measure of those alpha emissions. The technique also offers improved mountings for alpha detectors and other forms of detectors against vibration and the consequential effects vibration has on measurement accuracy.

Time-resolved singlet-oxygen luminescence detection with an efficient and practical semiconductor single-photon detector

PubMed Central

Boso, Gianluca; Ke, Damei; Korzh, Boris; Bouilloux, Jordan; Lange, Norbert; Zbinden, Hugo

2015-01-01

In clinical applications, such as PhotoDynamic Therapy, direct singlet-oxygen detection through its luminescence in the near-infrared range (1270 nm) has been a challenging task due to its low emission probability and the lack of suitable single-photon detectors. Here, we propose a practical setup based on a negative-feedback avalanche diode detector that is a viable alternative to the current state-of-the art for different clinical scenarios, especially where geometric collection efficiency is limited (e.g. fiber-based systems, confocal microscopy, scanning systems etc.). The proposed setup is characterized with Rose Bengal as a standard photosensitizer and it is used to measure the singlet-oxygen quantum yield of a new set of photosensitizers for site-selective photodynamic therapy. PMID:26819830

Canister cryogenic system for cooling germanium semiconductor detectors in borehole and marine probes

USGS Publications Warehouse

Boynton, G.R.

1975-01-01

High resolution intrinsic and lithium-drifted germanium gamma-ray detectors operate at about 77-90 K. A cryostat for borehole and marine applications has been designed that makes use of prefrozen propane canisters. Uses of such canisters simplifies cryostat construction, and the rapid exchange of canisters greatly reduces the time required to restore the detector to full holding-time capability and enhances the safety of a field operation where high-intensity 252Cf or other isotopic sources are used. A holding time of 6 h at 86 K was achieved in the laboratory in a simulated borehole probe in which a canister 3.7 cm diameter by 57 cm long was used. Longer holding times can be achieved by larger volume canisters in marine probes. ?? 1975.

Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

NASA Astrophysics Data System (ADS)

Maslyanchuk, Olena L.; Solovan, Mykhailo M.; Maistruk, Eduard V.; Brus, Viktor V.; Maryanchuk, Pavlo D.; Gnatyuk, Volodymyr A.; Aoki, Toru

2018-01-01

The present paper analyzes the charge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.

Pixel detectors for use in retina neurophysiology studies

NASA Astrophysics Data System (ADS)

Cunningham, W.; Mathieson, K.; Horn, M.; Melone, J.; McEwan, F. A.; Blue, A.; O'Shea, V.; Smith, K. M.; Litke, A.; Chichilnisky, E. J.; Rahman, M.

2003-08-01

One area of major inter-disciplinary co-operation is between the particle physics and bio-medical communities. The type of large detector arrays and fast electronics developed in laboratories like CERN are becoming used for a wide range of medical and biological experiments. In the present work fabrication technology developed for producing semiconductor radiation detectors has been applied to produce arrays which have been used in neuro-physiological experiments on retinal tissue. We have exploited UVIII, a low molecular weight resist, that has permitted large area electron beam lithography. This allows the resolution to go below that of conventional photolithography and hence the production of densely packed ˜500 electrode arrays with feature sizes down to below 2 μm. The neural signals from significant areas of the retina may thus be captured.

A Practical Guide to Experimental Geometrical Optics

NASA Astrophysics Data System (ADS)

Garbovskiy, Yuriy A.; Glushchenko, Anatoliy V.

2017-12-01

Preface; 1. Markets of optical materials, components, accessories, light sources and detectors; 2. Introduction to optical experiments: light producing, light managing, light detection and measuring; 3. Light detectors based on semiconductors: photoresistors, photodiodes in a photo-galvanic regime. Principles of operation and measurements; 4. Linear light detectors based on photodiodes; 5. Basic laws of geometrical optics: experimental verification; 6. Converging and diverging thin lenses; 7. Thick lenses; 8. Lens systems; 9. Simple optical instruments I: the eye and the magnifier, eyepieces and telescopes; 10. Simple optical instruments II: light illuminators and microscope; 11. Spherical mirrors; 12. Introduction to optical aberrations; 13. Elements of optical radiometry; 14. Cylindrical lenses and vials; 15. Methods of geometrical optics to measure refractive index; 16. Dispersion of light and prism spectroscope; 17. Elements of computer aided optical design; Index.

Optimization of niobium tunnel junctions as X-ray detectors

NASA Technical Reports Server (NTRS)

Saulnier, Gregory G.; Zacher, Robert A.; Van Vechten, Deborah; Boyer, Craig; Lovellette, Michael N.; Fritz, Gilbert G.; Soulen, Robert J.; Kang, Joonhee; Blamire, Mark; Kirk, Eugenie C. G.

1992-01-01

We report on our ongoing work using Nb/Al/AlO(x)/Nb junctions for the detection of X-rays. Detectors based on superconducting tunneling junctions offer the prospect of resolution over an order of magnitude higher than is obtainable with the current generation of semiconductor-based detectors. Results of measurements taken at 1.85 K (a temperature achievable with current space flight technology) include the current-voltage (I-V) curve, subgap current vs temperature, the dependence of the superconducting current on the applied magnetic field (Fraunhofer pattern), X-ray pulses, and the spectra from a 6 keV X-ray source which gave an intrinsic device resolution of approximately 700 eV. The collection of more than 10 exp 5 electrons per 6 keV photon is established.

Improved performance characteristics of a high temperature superconductor bolometer using photo-thermoelectrical feedback

NASA Astrophysics Data System (ADS)

Kaila, M. M.; Russell, G. J.

2000-12-01

We have designed a liquid nitrogen cooled detector where a thermoelectric feedback is combined with electrothermal feedback to produce an improvement of three orders of magnitude in the response time of the detector. We have achieved this by considering a parallel resistance combination of thermoelectric and High Temperature Superconductor (HTSC) material legs of an approximate geometry 1mm /spl times/ 2 mm /spl times/ 1micron operated at 80K. One end of this thermocouple acts as the sensitive area where the radiation is absorbed. The other end remains unexposed and stays basically at substrate temperature. It is found that micron thick films in our bolometer produce characteristics very close to those found for nanometer thick films required in semiconductor detectors and Low Temperature Superconductor (LTSC) bolometers.