Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

NASA Astrophysics Data System (ADS)

Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

2018-02-01

The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

Subpicosecond thin-disk laser oscillator with pulse energies of up to 25.9 microjoules by use of an active multipass geometry.

PubMed

Neuhaus, Joerg; Bauer, Dominik; Zhang, Jing; Killi, Alexander; Kleinbauer, Jochen; Kumkar, Malte; Weiler, Sascha; Guina, Mircea; Sutter, Dirk H; Dekorsy, Thomas

2008-12-08

The pulse shaping dynamics of a diode-pumped laser oscillator with active multipass cell was studied experimentally and numerically. We demonstrate the generation of high energy subpicosecond pulses with a pulse energy of up to 25.9 microJ at a pulse duration of 928 fs directly from a thin-disk laser oscillator. These results are achieved by employing a selfimaging active multipass geometry operated in ambient atmosphere. Stable single pulse operation has been obtained with an average output power in excess of 76 W and at a repetition rate of 2.93 MHz. Self starting passive mode locking was accomplished using a semiconductor saturable absorber mirror. The experimental results are compared with numerical simulations, showing good agreement including the appearance of Kelly sidebands. Furthermore, a modified soliton-area theorem for approximating the pulse duration is presented. (c) 2008 Optical Society of America

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yating; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towardsmore » dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.« less

Low level laser therapy for patients with cervical disk hernia.

PubMed

Takahashi, Hiroshi; Okuni, Ikuko; Ushigome, Nobuyuki; Harada, Takashi; Tsuruoka, Hiroshi; Ohshiro, Toshio; Sekiguchi, Masayuki; Musya, Yoshiro

2012-09-30

In previous studies we have reported the benefits of low level laser therapy (LLLT) for chronic shoulder joint pain, elbow, hand and finger pain, and low back pain. The present study is a report on the effects of LLLT for chronic neck pain. Over a 3 year period, 26 rehabilitation department outpatients with chronic neck pain, diagnosed as being caused by cervical disk hernia, underwent treatment applied to the painful area with a 1000 mW semi-conductor laser device delivering at 830 nm in continuous wave, 20.1 J/cm(2)/point, and three shots were given per session (1 treatment) with twice a week for 4 weeks. 1. A visual analogue scale (VAS) was used to determine the effects of LLLT for chronic pain and after the end of the treatment regimen a significant improvement was observed (p<0.001). 2. After treatment, no significant differences in cervical spine range of motion were observed. 3. Discussions with the patients revealed that in order to receive continued benefits from treatment, it was important for them to be taught how to avoid postures that would cause them neck pain in everyday life. The present study demonstrates that LLLT was an effective form of treatment for neck and back pain caused by cervical disk hernia, reinforced by postural training.

Low Level Laser Therapy for Patients with Cervical Disk Hernia

PubMed Central

Takahashi, Hiroshi; Okuni, Ikuko; Ushigome, Nobuyuki; Harada, Takashi; Tsuruoka, Hiroshi; Ohshiro, Toshio; Sekiguchi, Masayuki; Musya, Yoshiro

2012-01-01

Background and Aims: In previous studies we have reported the benefits of low level laser therapy (LLLT) for chronic shoulder joint pain, elbow, hand and finger pain, and low back pain. The present study is a report on the effects of LLLT for chronic neck pain. Materials and Methods: Over a 3 year period, 26 rehabilitation department outpatients with chronic neck pain, diagnosed as being caused by cervical disk hernia, underwent treatment applied to the painful area with a 1000 mW semi-conductor laser device delivering at 830 nm in continuous wave, 20.1 J/cm2/point, and three shots were given per session (1 treatment) with twice a week for 4 weeks. Results: 1. A visual analogue scale (VAS) was used to determine the effects of LLLT for chronic pain and after the end of the treatment regimen a significant improvement was observed (p<0.001). 2. After treatment, no significant differences in cervical spine range of motion were observed. 3. Discussions with the patients revealed that in order to receive continued benefits from treatment, it was important for them to be taught how to avoid postures that would cause them neck pain in everyday life. Conclusion: The present study demonstrates that LLLT was an effective form of treatment for neck and back pain caused by cervical disk hernia, reinforced by postural training. PMID:24511189

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

NASA Astrophysics Data System (ADS)

Islam, S. M.; Protasenko, Vladimir; Lee, Kevin; Rouvimov, Sergei; Verma, Jai; Xing, Huili Grace; Jena, Debdeep

2017-08-01

Deep ultraviolet (UV) optical emission below 250 nm (˜5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (˜5.7-5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN. The quantum confinement energy in these heterostructures is larger than the bandgaps of traditional semiconductors, made possible by the large band offsets. These molecular beam epitaxy-grown extreme quantum-confinement GaN/AlN heterostructures exhibit an internal quantum efficiency of 40% at wavelengths as short as 219 nm. These observations together with the ability to engineer the interband optical matrix elements to control the direction of photon emission in such binary quantum disk active regions offer unique advantages over alloy AlGaN quantum well counterparts for the realization of deep-UV light-emitting diodes and lasers.

High-power disk lasers: advances and applications

NASA Astrophysics Data System (ADS)

Havrilla, David; Ryba, Tracey; Holzer, Marco

2012-03-01

Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With about 2,000 high power disk lasers installations, and a demand upwards of 1,000 lasers per year, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain recent advances in disk laser technology and process relevant features of the laser, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

Coupling effects in the modal emission of colloidal quantum dot microdisk lasers.

NASA Astrophysics Data System (ADS)

Lafalce, Evan; Zheng, Qingji; Lin, Chunhao; Smith, Marcus; Malak, Sidney; Jung, Jaehan; Yoon, Young; Lin, Zhiqun; Tsukruk, Vladimir; Vardeny, Z. Valy

Solution-processed semiconductors such as colloidal quantum dots (CQD) are particularly suited materials for monolithic fabrication of laser microstructures because of their ease of fabrication and compatibility with conventional lithographic techniques. We use the functionality of core/alloyed-shell CQDs to fabricate microdisk lasers of variable size and study the resulting whispering-gallery mode laser emission. In particular we study the effects of near-field coupling on resonant modes of pairs of these lasers with sub-micrometer spacing. We demonstrate the occurrence of lasing modes that originate from the interaction between two such microdisks by means of varying the spatial distribution and magnitude of the gain and loss in the coupled-pair. The transition from emission of modes localized on a single disk to those of the interacting pair is accompanied by coalescence of eigen-frequencies and pump-induced turn-off of lasing, highlighting the role of parity-time symmetry and exceptional point physics. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

High power disk lasers: advances and applications

NASA Astrophysics Data System (ADS)

Havrilla, David; Holzer, Marco

2011-02-01

Though the genesis of the disk laser concept dates to the early 90's, the disk laser continues to demonstrate the flexibility and the certain future of a breakthrough technology. On-going increases in power per disk, and improvements in beam quality and efficiency continue to validate the genius of the disk laser concept. As of today, the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over monolithic architectures. With well over 1000 high power disk lasers installations, the disk laser has proven to be a robust and reliable industrial tool. With advancements in running cost, investment cost and footprint, manufacturers continue to implement disk laser technology with more vigor than ever. This paper will explain important details of the TruDisk laser series and process relevant features of the system, like pump diode arrangement, resonator design and integrated beam guidance. In addition, advances in applications in the thick sheet area and very cost efficient high productivity applications like remote welding, remote cutting and cutting of thin sheets will be discussed.

Recent development of disk lasers at TRUMPF

NASA Astrophysics Data System (ADS)

Schad, Sven-Silvius; Gottwald, Tina; Kuhn, Vincent; Ackermann, Matthias; Bauer, Dominik; Scharun, Michael; Killi, Alexander

2016-03-01

The disk laser is one of the most important laser concepts for today's industrial laser market. Offering high brilliance at low cost, high optical efficiency and great application flexibility the disk laser paved the way for many industrial laser applications. Over the past years power and brightness increased and the disk laser turned out to be a very versatile laser source, not only for welding but also for cutting. Both, the quality and speed of cutting are superior to CO2-based lasers for a vast majority of metals, and, most important, in a broad thickness range. In addition, due to the insensitivity against back reflections the disk laser is well suited for cutting highly reflective metal such as brass or copper. These advantages facilitate versatile cutting machines and explain the high and growing demand for disk lasers for applications besides welding applications that can be observed today. From a today's perspective the disk principle has not reached any fundamental limits regarding output power per disk or beam quality, and offers numerous advantages over other high power resonator concepts, especially over fiber lasers or direct diode lasers. This paper will give insight in the latest progress in kilowatt class cw disk laser technology at TRUMPF and will discuss recent power scaling results as well.

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

Bibliography of Soviet Laser Developments, No. 18, October - December 1974

DTIC Science & Technology

1975-04-25

IIV Lasers, Laser Theory , Laser Biological Effects, Laser Communications, Laser Computer Technology, Holography, Laser Chemical Effects...spectros.copy of laser materials; ultrashort pulse generation; crystal growing; theoretical aspects of advanced lasers; and general laser theory Laser...Semiconductor: Mixed Junction 5 6. Semiconductor: Heterojunction ^ 7. Semiconductor: Theory 8. Nd:Glass B. Liquid Lasers 1

New generation of compact high power disk lasers

NASA Astrophysics Data System (ADS)

Feuchtenbeiner, Stefanie; Zaske, Sebastian; Schad, Sven-Silvius; Gottwald, Tina; Kuhn, Vincent; Kumkar, Sören; Metzger, Bernd; Killi, Alexander; Haug, Patrick; Speker, Nicolai

2018-02-01

New technological developments in high power disk lasers emitting at 1030 nm are presented. These include the latest generation of TRUMPF's TruDisk product line offering high power disk lasers with up to 6 kW output power and beam qualities of up to 4 mm*mrad. With these compact devices a footprint reduction of 50% compared to the previous model could be achieved while at the same time improving robustness and increasing system efficiency. In the context of Industry 4.0, the new generation of TruDisk lasers features a synchronized data recording of all sensors, offering high-quality data for virtual analyses. The lasers therefore provide optimal hardware requirements for services like Condition Monitoring and Predictive Maintenance. We will also discuss its innovative and space-saving cooling architecture. It allows operation of the laser under very critical ambient conditions. Furthermore, an outlook on extending the new disk laser platform to higher power levels will be given. We will present a disk laser with 8 kW laser power out of a single disk with a beam quality of 5 mm*mrad using a 125 μm fiber, which makes it ideally suited for cutting and welding applications. The flexibility of the disk laser platform also enables the realization of a wide variety of beam guiding setups. As an example a new scheme called BrightLine Weld will be discussed. This technology allows for an almost spatter free laser welding process, even at high feed rates.

Thin disk lasers: history and prospects

NASA Astrophysics Data System (ADS)

Speiser, Jochen

2016-04-01

During the early 1990s, collaboration between the German Aerospace Center and the University of Stuttgart started to work on the Thin Disk concept. The core idea behind the thin disk design is the use of a thin, disk-shaped active medium that is cooled through one of the flat faces of the disk. This ensures a large surface-to-volume ratio and therefore provides very efficient thermal management. Today, the thin disk concept is used in various commercial lasers - ranging from compact, efficient low power systems to multi-kW lasers, including cw lasers and also pulsed (femtosecond to nanosecond) oscillators and amplifiers. The whole development of the Thin Disk laser was and will be accompanied by numerical modeling and optimization of the thermal and thermo-mechanic behavior of the disk and also the heat sink structure, mostly based on finite element models. For further increasing the energy and efficiency of pulsed Thin Disk lasers, the effects of amplified spontaneous emission (ASE) are a core issue. Actual efforts are oriented towards short pulse and ultra-short pulse amplifiers with (multi-)kW average power or Joule-class Thin Disk amplifiers, but also on new designs for cw thin disk MOPA designs.

High average power scaleable thin-disk laser

DOEpatents

Beach, Raymond J.; Honea, Eric C.; Bibeau, Camille; Payne, Stephen A.; Powell, Howard; Krupke, William F.; Sutton, Steven B.

2002-01-01

Using a thin disk laser gain element with an undoped cap layer enables the scaling of lasers to extremely high average output power values. Ordinarily, the power scaling of such thin disk lasers is limited by the deleterious effects of amplified spontaneous emission. By using an undoped cap layer diffusion bonded to the thin disk, the onset of amplified spontaneous emission does not occur as readily as if no cap layer is used, and much larger transverse thin disks can be effectively used as laser gain elements. This invention can be used as a high average power laser for material processing applications as well as for weapon and air defense applications.

Composite polymer: Glass edge cladding for laser disks

DOEpatents

Powell, H.T.; Wolfe, C.A.; Campbell, J.H.; Murray, J.E.; Riley, M.O.; Lyon, R.E.; Jessop, E.S.

1987-11-02

Large neodymium glass laser disks for disk amplifiers such as those used in the Nova laser require an edge cladding which absorbs at 1 micrometer. This cladding prevents edge reflections from causing parasitic oscillations which would otherwise deplete the gain. Nova now utilizes volume-absorbing monolithic-glass claddings which are fused at high temperature to the disks. These perform quite well but are expensive to produce. Absorbing glass strips are adhesively bonded to the edges of polygonal disks using a bonding agent whose index of refraction matches that of both the laser and absorbing glass. Optical finishing occurs after the strips are attached. Laser disks constructed with such claddings have shown identical gain performance to the previous Nova disks and have been tested for hundreds of shots without significant degradation. 18 figs.

Composite polymer-glass edge cladding for laser disks

DOEpatents

Powell, Howard T.; Riley, Michael O.; Wolfe, Charles R.; Lyon, Richard E.; Campbell, John H.; Jessop, Edward S.; Murray, James E.

1989-01-01

Large neodymium glass laser disks for disk amplifiers such as those used in the Nova laser require an edge cladding which absorbs at 1 micrometer. This cladding prevents edge reflections from causing parasitic oscillations which would otherwise deplete the gain. Nova now utilizes volume-absorbing monolithic-glass claddings which are fused at high temperature to the disks. These perform quite well but are expensive to produce. Absorbing glass strips are adhesively bonded to the edges of polygonal disks using a bonding agent whose index of refraction matches that of both the laser and absorbing glass. Optical finishing occurs after the strips are attached. Laser disks constructed with such claddings have shown identical gain performance to the previous Nova disks and have been tested for hundreds of shots without significant degradation.

Method for optical pumping of thin laser media at high average power

DOEpatents

Zapata, Luis E [Livermore, CA; Beach, Raymond J [Livermore, CA; Honea, Eric C [Sunol, CA; Payne, Stephen A [Castro Valley, CA

2004-07-13

A thin, planar laser material is bonded to a light guide of an index-matched material forming a composite disk. Diode array or other pump light is introduced into the composite disk through the edges of the disk. Pump light trapped within the composite disk depletes as it multi-passes the laser medium before reaching an opposing edge of the disk. The resulting compound optical structure efficiently delivers concentrated pump light and to a laser medium of minimum thickness. The external face of the laser medium is used for cooling. A high performance cooler attached to the external face of the laser medium rejects heat. Laser beam extraction is parallel to the heat flux to minimize optical distortions.

Method and system for powering and cooling semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telford, Steven J; Ladran, Anthony S

A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Single steady frequency and narrow-linewidth external-cavity semiconductor laser

NASA Astrophysics Data System (ADS)

Zhao, Weirui; Jiang, Pengfei; Xie, Fuzeng

2003-11-01

A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10-3°C by temperature control system. The experiments have been carried out and the results obtained - the spectral line width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

Self-mode-locked AlGaInP-VECSEL

NASA Astrophysics Data System (ADS)

Bek, R.; Großmann, M.; Kahle, H.; Koch, M.; Rahimi-Iman, A.; Jetter, M.; Michler, P.

2017-10-01

We report the mode-locked operation of an AlGaInP-based semiconductor disk laser without a saturable absorber. The active region containing 20 GaInP quantum wells is used in a linear cavity with a curved outcoupling mirror. The gain chip is optically pumped by a 532 nm laser, and mode-locking is achieved by carefully adjusting the pump spot size. For a pump power of 6.8 W, an average output power of up to 30 mW is reached at a laser wavelength of 666 nm. The pulsed emission is characterized using a fast oscilloscope and a spectrum analyzer, demonstrating stable single-pulse operation at a repetition rate of 3.5 GHz. Intensity autocorrelation measurements reveal a FWHM pulse duration of 22 ps with an additional coherence peak on top, indicating noise-like pulses. The frequency spectrum, as well as the Gaussian beam profile and the measured beam propagation factor below 1.1, shows no influence of higher order transverse modes contributing to the mode-locked operation.

Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Hughes, Steven; Citrin, David

1998-01-01

We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Influence of spontaneous fluctuations on the emission spectrum of an injection semiconductor laser

NASA Astrophysics Data System (ADS)

Gulyaev, Yurii V.; Suris, Robert A.; Tager, A. A.; Élenkrig, B. B.

1988-11-01

A theoretical investigation is made of fluctuation-induced excitation of side longitudinal modes in the emission spectra of semiconductor lasers, including those with an external mirror. It is shown that nonlinear refraction of light in the active region of a semiconductor laser may result in a noise redistribution of the radiation between longitudinal resonator modes and can be responsible for the multimode nature of the average emission spectrum. An analysis is made of the influence of selectivity of an external mirror on the stability of cw operation, minimum line width, and mode composition of the emission spectra of semiconductor lasers. The conditions for maximum narrowing of the emission spectrum of a semiconductor laser with an external selective mirror are identified.

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

DOE PAGES

Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.; ...

2016-01-26

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

Effect of different laser irradiation on the dysentery bacilli

NASA Astrophysics Data System (ADS)

Ou, Lin; Chen, Rong; Chen, Yanjiao; Li, Depin; Wen, Caixia

1998-08-01

The S. flexnesi, which have high drug-resistance especially in Cm, Sm, Tc, SD, were irradiated by Ar+ laser at 488 nm and semiconductor laser at 808 nm. The experiment results have shown that both Ar+ laser and semiconductor laser with power density of 1.7 w/cm2 and irradiation dose of 2000 J/cm2 can conduce to the bacterial lethality and increase the mutation rates of the bacterial drug-sensitivity, and 'Colony Count' method have the superiority over the 'Inhibacteria Ring' method. At the mean time it further indicate that the high power semiconductor laser would play an important role in the sciences of laser biological medicine. But the effect of the near infrared semiconductor laser is far lower than that of Ar+ laser of shorter wavelength at the same irradiation dose. It is clear that the output and irradiation dose of near infrared semiconductor laser shall be increased in order to get the same rates of the bacterial lethality and the drug-sensitivity mutation as Ar+ laser's.

Frequency doubled high-power disk lasers in pulsed and continuous-wave operation

NASA Astrophysics Data System (ADS)

Weiler, Sascha; Hangst, Alexander; Stolzenburg, Christian; Zawischa, Ivo; Sutter, Dirk; Killi, Alexander; Kalfhues, Steffen; Kriegshaeuser, Uwe; Holzer, Marco; Havrilla, David

2012-03-01

The disk laser with multi-kW output power in infrared cw operation is widely used in today's manufacturing, primarily in the automotive industry. The disk technology combines high power (average and/or peak power), excellent beam quality, high efficiency and high reliability with low investment and operating costs. Additionally, the disk laser is ideally suited for frequency conversion due to its polarized output with negligible depolarization losses. Laser light in the green spectral range (~515 nm) can be created with a nonlinear crystal. Pulsed disk lasers with green output of well above 50 W (extracavity doubling) in the ps regime and several hundreds of Watts in the ns regime with intracavity doubling are already commercially available whereas intracavity doubled disk lasers in continuous wave operation with greater than 250 W output are in test phase. In both operating modes (pulsed and cw) the frequency doubled disk laser offers advantages in existing and new applications. Copper welding for example is said to show much higher process reliability with green laser light due to its higher absorption in comparison to the infrared. This improvement has the potential to be very beneficial for the automotive industry's move to electrical vehicles which requires reliable high-volume welding of copper as a major task for electro motors, batteries, etc.

Modeling of a diode-pumped thin-disk cesium vapor laser

NASA Astrophysics Data System (ADS)

An, Guofei; Cai, He; Liu, Xiaoxu; Han, Juhong; Zhang, Wei; Wang, Hongyuan; Wang, You

2018-03-01

A diode pumped alkali laser (DPAL) provides a significant potential for construction of high-powered lasers. Until now, a series of models have been established to analyze the kinetic process and most of them are based on the end-pumped alkali laser system in which the vapor cell are usually cylindrical and cuboid. In this paper, a mathematic model is constructed to investigate the kinetic processes of a diode pumped thin-disk cesium vapor laser, in which the cesium vapor and the buffer gases are beforehand filled in a sealed glass cell with a thin-disk structure. We systemically study the influences of the cell temperature and cell thickness on the output features of a thin-disk DPAL. Further, we study the thin-disk DPAL with the W-shaped resonator and multiple-disk configuration. To the best of our knowledge, there have not been any similar reports so far.

Laser Optical Disk: The Coming Revolution in On-Line Storage.

ERIC Educational Resources Information Center

Fujitani, Larry

1984-01-01

Review of similarities and differences between magnetic-based and optical disk drives includes a discussion of the electronics necessary for their operation; describes benefits, possible applications, and future trends in development of laser-based drives; and lists manufacturers of laser optical disk drives. (MBR)

Time Resolved Near Field Optical Microscopy

NASA Astrophysics Data System (ADS)

Stark, J. B.

1996-03-01

We use broadband pulses to image the carrier dynamics of semiconductor microstructures on a 150 nm spatial scale, with a time resolution of 60 femtoseconds. Etched disks of GaAs/AlGaAs multiple quantum well material, 10 microns in diameter, are excited with a 30 fs pump from a Ti:Sapphire laser, and probed using a near-field optical microscope. The nonlinear transmission of the microdisks is measured using a double-modulation technique, sensitive to transmission changes of 0.0005 within a 150 nm diameter spot on the sample. This spot is scanned to produce an image of the sample. The nonlinear response is produced by the occupation of phase space by the excited distribution. Images of this evolving distribution are collected at time intervals following excitation, measuring the relaxation of carriers at each point in the microdisk. The resulting data can be viewed as a movie of the carrier dynamics of nonequilibrium distributions in excited semiconductor structures. Work done in collaboration with U. Mohideen and R. E. Slusher.

Estimation of Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2012-01-01

We evaluate mechanical thermal noise in semiconductor lasers, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Our simple model determines an underlying fundamental limit for the frequency noise of free-running semiconductor laser, and provides a framework: where the noise may be potentially reduced with improved design.

Cryogenic Yb: YAG Thin-Disk Laser

DTIC Science & Technology

2016-09-09

AFRL-RD-PS- TP-2016-0004 AFRL-RD-PS- TP-2016-0004 CRYOGENIC Yb: YAG THINN-DISK LASER N . Vretenar, et al. 19 August 2011 Technical Paper...Cryogenic Yb: YAG Thin-Disk Laser 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) * N . Vretenar, R. Carson, ***T. Lucas, T. Newell, W.P. Latham...Thin-Disk Laser N . Vretenar,1 T. Carson,2 T. Lucas,3T. Newell,2 W. P. Latham,2 and P. Peterson,3 H. Bostanci,4 J. J. Lindauer4, B. A. Saarloos,4

Researching the 915 nm high-power and high-brightness semiconductor laser single chip coupling module

NASA Astrophysics Data System (ADS)

Wang, Xin; Wang, Cuiluan; Wu, Xia; Zhu, Lingni; Jing, Hongqi; Ma, Xiaoyu; Liu, Suping

2017-02-01

Based on the high-speed development of the fiber laser in recent years, the development of researching 915 nm semiconductor laser as main pumping sources of the fiber laser is at a high speed. Because the beam quality of the laser diode is very poor, the 915 nm laser diode is generally based on optical fiber coupling module to output the laser. Using the beam-shaping and fiber-coupling technology to improve the quality of output beam light, we present a kind of high-power and high-brightness semiconductor laser module, which can output 13.22 W through the optical fiber. Based on 915 nm GaAs semiconductor laser diode which has output power of 13.91 W, we describe a thoroughly detailed procedure for reshaping the beam output from the semiconductor laser diode and coupling the beam into the optical fiber of which the core diameter is 105 μm and the numerical aperture is 0.18. We get 13.22 W from the output fiber of the module at 14.5 A, the coupling efficiency of the whole module is 95.03% and the brightness is 1.5 MW/cm2 -str. The output power of the single chip semiconductor laser module achieves the advanced level in the domestic use.

Bidirectional chaos communication between two outer semiconductor lasers coupled mutually with a central semiconductor laser.

PubMed

Li, Ping; Wu, Jia-Gui; Wu, Zheng-Mao; Lin, Xiao-Dong; Deng, Dao; Liu, Yu-Ran; Xia, Guang-Qiong

2011-11-21

Based on a linear chain composed of a central semiconductor laser and two outer semiconductor lasers, chaos synchronization and bidirectional communication between two outer lasers have been investigated under the case that the central laser and the two outer lasers are coupled mutually, whereas there exists no coupling between the two outer lasers. The simulation results show that high-quality and stable isochronal synchronization between the two outer lasers can be achieved, while the cross-correlation coefficients between the two outer lasers and the central laser are very low under proper operation condition. Based on the high performance chaos synchronization between the two outer lasers, message bidirectional transmissions of bit rates up to 20 Gbit/s can be realized through adopting a novel decoding scheme which is different from that based on chaos pass filtering effect. Furthermore, the security of bidirectional communication is also analyzed. © 2011 Optical Society of America

ZnCdMgSe as a Materials Platform for Advanced Photonic Devices: Broadband Quantum Cascade Detectors and Green Semiconductor Disk Lasers

NASA Astrophysics Data System (ADS)

De Jesus, Joel

The ZnCdMgSe family of II-VI materials has unique and promising characteristics that may be useful in practical applications. For example they can be grown lattice matched to InP substrates with lattice matched bandgaps that span from 2.1 to 3.5 eV, they can be successfully doped n-type, have a large conduction band offset (CBO) with no intervalley scattering present when strained, they have lower average phonon energies, and the InP lattice constant lies in the middle of the ZnSe and CdSe binaries compounds giving room to experiment with tensile and compressive stress. However they have not been studied in detail for use in practical devices. Here we have identified two types of devices that are being currently developed that benefit from the ZnCdMgSe-based material properties. These are the intersubband (ISB) quantum cascade (QC) detectors and optically pumped semiconductor lasers that emit in the visible range. The paucity for semiconductor lasers operating in the green-orange portion of the visible spectrum can be easily overcome with the ZnCdMgSe materials system developed in our research. The non-strain limited, large CBO available allows to expand the operating wavelength of ISB devices providing shorter and longer wavelengths than the currently commercially available devices. This property can also be exploited to develop broadband room temperature operation ISB detectors. The work presented here focused first on using the ZnCdMgSe-based material properties and parameter to understand and predict the interband and intersubband transitions of its heterostructures. We did this by studying an active region of a QC device by contactless electroreflectance, photoluminescence, FTIR transmittance and correlating the measurements to the quantum well structure by transfer matrix modeling. Then we worked on optimizing the ZnCdMgSe material heterostructures quality by studying the effects of growth interruptions on their optical and optoelectronic properties of devices. Growth interruptions improvements were evident both by sharper PL peaks on multilayer structures and by narrow and more efficient electroluminescence emission on intersubband devices. By using these techniques, and using materials lattice matched to InP, we then developed the first II-VI based QC detector with high responsivity for 3.5 and 2.5mum IR wavelengths, explored the combination of several detector cores arrangements to make a broadband IR detectors, and achieved a QC broadband detector operating from 3.3 to 6 mum also with high responsivity and high detectivity. For the visible lasers, we have successfully combined distributed Bragg reflectors (DBRs) and resonant cavity MQW structures into a single device to achieve green semiconductor disk lasers (SDL). We also investigated novel strain engineered multiple quantum wells (MQWs) using CdSe and ZnSe strained layers. This last research provided materials with shorter wavelength activity in the IR, achieving absorption as low as 2.5 mum, and visible red emission lattice matched to InP, providing new building blocks for all of the above mentioned devices. Our results demonstrate the outstanding capabilities of the material system, and provide tools and techniques for further development.

Plasma and Shock Generation by Indirect Laser Pulse Action

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasperczuk, A.; Borodziuk, S.; Pisarczyk, T.

2006-01-15

In the paper the results of our experiment with flyer disks, accelerated to high velocities by the PALS iodine laser and subsequently creating craters when hitting massive targets , are presented. We have carried out experiments with the double targets consisted of a disk placed in front of a massive target part at distances of either 200 or 500 {mu}m. Both elements of the targets were made of Al. The following disk irradiation conditions were used: laser energy of 130 J, laser wavelength of 1.315 {mu}m, pulse duration of 0.4 ns, and laser spot diameter of 250 {mu}m. To measuremore » some plasma parameters and accelerated disk velocity a three frame interferometric system was used. Efficiency of crater creation by a disk impact was determined from the crater parameters, which were obtained by means of a crater replica technique. The experimental results concern two main stages: (a) ablative plasma generation and disk acceleration and (b) disk impact and crater creation. Spatial density distributions at different moments of plasma generation and expansion are shown. Discussion of the experimental results on the basis of a 2-D theoretical model of the laser -- solid target interaction is carried out.« less

Reduction of B-integral accumulation in lasers

DOEpatents

Meyerhofer, David D.; Konoplev, Oleg A.

2000-01-01

A pulsed laser is provided wherein the B-integral accumulated in the laser pulse is reduced using a semiconductor wafer. A laser pulse is generated by a laser pulse source. The laser pulse passes through a semiconductor wafer that has a negative nonlinear index of refraction. Thus, the laser pulse accumulates a negative B-integral. The laser pulse is then fed into a laser amplification medium, which has a positive nonlinear index of refraction. The laser pulse may make a plurality of passes through the laser amplification medium and accumulate a positive B-integral during a positive non-linear phase change. The semiconductor and laser pulse wavelength are chosen such that the negative B-integral accumulated in the semiconductor wafer substantially cancels the positive B-integral accumulated in the laser amplification medium. There may be additional accumulation of positive B-integral if the laser pulse passes through additional optical mediums such as a lens or glass plates. Thus, the effects of self-phase modulation in the laser pulse are substantially reduced.

Key techniques for space-based solar pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Evaluation of thermal effects on the beam quality of disk laser with unstable resonator

NASA Astrophysics Data System (ADS)

Shayganmanesh, Mahdi; Beirami, Reza

2017-01-01

In this paper thermal effects of the disk active medium and associated effects on the beam quality of laser are investigated. Using Collins integral and iterative method, transverse mode of an unstable resonator including a Yb:YAG active medium in disk geometry is calculated. After that the beam quality of the laser is calculated based on the generalized beam characterization method. Thermal lensing of the disk is calculated based on the OPD (Optical Path Difference) concept. Five factors influencing the OPD including temperature gradient, disk thermal expansion, photo-elastic effect, electronic lens and disk deformation are considered in our calculations. The calculations show that the effect of disk deformation factor on the quality of laser beam in the resonator is strong. However the total effect of all the thermal factors on the internal beam quality is fewer. Also it is shown that thermal effects degrade the output power, beam profile and beam quality of the output laser beam severely. As well the magnitude of each of affecting factors is evaluated distinctly.

FIBER OPTICS. ACOUSTOOPTICS: Amplification of semiconductor laser radiation in the wavelength range 1.24-1.3 μm by stimulated Raman scattering in an optical fiber

NASA Astrophysics Data System (ADS)

Belotitskiĭ, V. I.; Kuzin, E. A.; Ovsyannikov, D. V.; Petrov, Mikhail P.

1990-07-01

An investigation was made of the influence of weak semiconductor laser radiation on the spectrum of stimulated Raman scattering in a single-mode optical waveguide pumped by a YAG:Nd3+ laser emitting at 1.06 μm. The scattered radiation power increased by a factor exceeding 10 at the semiconductor laser wavelength. A small-signal dynamic gain reached 47 dB. Simultaneous amplification was observed of several modes of multimode semiconductor laser radiation with an intermode spectral interval of 1.3 nm.

Composite Yb:YAG/SiC-prism thin disk laser.

PubMed

Newburgh, G A; Michael, A; Dubinskii, M

2010-08-02

We report the first demonstration of a Yb:YAG thin disk laser wherein the gain medium is intracavity face-cooled through bonding to an optical quality SiC prism. Due to the particular design of the composite bonded Yb:YAG/SiC-prism gain element, the laser beam impinges on all refractive index interfaces inside the laser cavity at Brewster's angles. The laser beam undergoes total internal reflection (TIR) at the bottom of the Yb(10%):YAG thin disk layer in a V-bounce cavity configuration. Through the use of TIR and Brewster's angles, no optical coatings, either anti-reflective (AR) or highly reflective (HR), are required inside the laser cavity. In this first demonstration, the 936.5-nm diode pumped laser performed with approximately 38% slope efficiency at 12 W of quasi-CW (Q-CW) output power at 1030 nm with a beam quality measured at M(2) = 1.5. This demonstration opens up a viable path toward novel thin disk laser designs with efficient double-sided room-temperature heatsinking via materials with the thermal conductivity of copper on both sides of the disk.

Apparatus For Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers Using Vertical Emission

NASA Technical Reports Server (NTRS)

Cook, Anthony L. (Inventor); Hendricks, Herbert D. (Inventor)

2000-01-01

The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam, provide unobstructed access to laser emission for the formation of the external cavity, and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror or grating.

Method and Apparatus for Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers using Vertical Emission

NASA Technical Reports Server (NTRS)

Cook, Anthony L. (Inventor); Hendricks, Herbert D. (Inventor)

1998-01-01

The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam. provide unobstructed access to laser emission for the formation of the external cavity. and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror of grating.

Semiconductor optoelectronic devices for free-space optical communications

NASA Technical Reports Server (NTRS)

Katz, J.

1983-01-01

The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

Schemes for efficient QW pumping of AlGaInP disk lasers

NASA Astrophysics Data System (ADS)

Brauch, Uwe; Mateo, Cherry May N.; Kahle, Hermann; Bek, Roman; Jetter, Michael; Abdou Ahmed, Marwan; Michler, Peter; Graf, Thomas

2017-02-01

Keys to high-power operation of disk lasers are a thin active layer, a small Stokes shift and an efficient cooling, best realized with a limited number of QWs which are pumped close to the laser wavelength and which are in close contact with one or two diamond heat sinks. To get sufficient pump absorption many passes of the pump radiation are needed. This can be realized either by taking advantage of intrinsic resonances (designed for the pump radiation) or by an external multi-pass optics (known from Yb disk lasers) or a combination of both. The various options will be discussed and some results for AlGaInP disk lasers will be presented.

Tunable Oscillations in Optically Injected Semiconductor Lasers With Reduced Sensitivity to Perturbations - Postprint

DTIC Science & Technology

2014-09-01

Squeezed light from injection- locked quantum well lasers ,” Phys. Rev. Lett., vol. 71, pp. 3951–3954, 1993. [30] A. E. Siegman , Lasers , 1st ed...AFRL-RY-WP-TP-2014-0297 TUNABLE OSCILLATIONS IN OPTICALLY INJECTED SEMICONDUCTOR LASERS WITH REDUCED SENSITIVITY TO PERTURBATIONS -POSTPRINT...OSCILLATIONS IN OPTICALLY INJECTED SEMICONDUCTOR LASERS WITH REDUCED SENSITIVITY TO PERTURBATIONS - POSTPRINT 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER

Influence of temperature on the spectral characteristics of semiconductor lasers in the visible range

NASA Astrophysics Data System (ADS)

Adamov, A. A.; Baranov, M. S.; Khramov, V. N.

2018-04-01

The results of studies on the effect of temperature on the output spectral characteristics of continuous semiconductor lasers of the visible range are presented. The paper presents the results of studying the spectral-optical radiation parameters of semiconductor lasers, their coherence lengths, and the dependence of the position of the spectral peak of the wavelength on temperature. This is necessary for the selection of the most optimal laser in order to use it for medical ophthalmologic diagnosis. The experiment was carried out using semiconductor laser modules based on a laser diode. The spectra were recorded by using a two-channel automated spectral complex based on the MDR-23 monochromator. Spectral dependences on the temperature of semiconductor lasers are obtained, in the range from 300 to 370 K. The possibility of determining the internal damage to the stabilization of laser modules without opening the case is shown, but only with the use of their spectral characteristics. The obtained data allow taking into account temperature characteristics and further optimization of parameters of such lasers when used in medical practice, in particular, in ophthalmologic diagnostics.

Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

NASA Technical Reports Server (NTRS)

Numata, K.; Camp, J.

2011-01-01

So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

Methods for determining optical power, for power-normalizing laser measurements, and for stabilizing power of lasers via compliance voltage sensing

DOEpatents

Taubman, Matthew S; Phillips, Mark C

2015-04-07

A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

Laser radiation at various wavelengths for decompression of intervertebral disk. Experimental observations on human autopsy specimens.

PubMed

Choy, D S; Altman, P A; Case, R B; Trokel, S L

1991-06-01

The interaction of laser radiation with the nucleus pulposus from autopsy specimens of human intervertebral disks was evaluated at different wavelengths (193 nm, 488 nm & 514 nm, 1064 nm, 1318 nm, 2150 nm, 2940 nm, and 10600 nm). A significant correlation of linear least squares fit of the mass ablated as a function of incident energy was found for all lasers used except the Excimer at 193 nm. The 2940-nm Erbium:YAG laser was most efficient in terms of mass of disk ablated per joule in the limited lower range where this wavelength was observed. At higher energy levels, the CO2 laser in the pulsed mode was most efficient. However, the Nd:YAG 1064-nm and 1318-nm lasers are currently best suited for percutaneous laser disk decompression because of the availability of usable waveguides. Carbonization of tissue with the more penetrating Nd:YAG 1064-nm laser increases the efficiency of tissue ablation and makes it comparable to the Nd:YAG 1318-nm laser.

Innovative opto-mechanical design of a laser head for compact thin-disk

NASA Astrophysics Data System (ADS)

Macúchová, Karolina; Smrž, Martin; Řeháková, Martina; Mocek, Tomáš

2016-11-01

We present recent progress in design of innovative versatile laser head for lasers based on thin-disk architecture which are being constructed at the HiLASE centre of the IOP in the Czech Republic. Concept of thin-disk laser technology allows construction of lasers providing excellent beam quality with high average output power and optical efficiency. Our newly designed thin-disk carrier and pump module comes from optical scheme consisting of a parabolic mirror and roof mirrors proposed in 90's. However, mechanical parts and a cooling system were in-house simplified and tailor-made to medium power lasers since no suitable setup was commercially available. Proposed opto-mechanical design is based on stable yet easily adjustable mechanics. The only water nozzle-cooled component is a room-temperature-operated thindisk mounted on a special cooling finger. Cooling of pump optics was replaced by heat conductive transfer from mirrors made of special Al alloy to a massive brass baseplate. Such mirrors are easy to manufacture and very cheap. Presented laser head was manufactured and tested in construction of Er and Yb doped disk lasers. Details of the latest design will be presented.

Lasers, their development, and applications at M.I.T. Lincoln Laboratory

NASA Technical Reports Server (NTRS)

Rediker, R. H.; Melngailis, I.; Mooradian, A.

1984-01-01

A historical account of the work on lasers at MIT Lincoln Laboratory is presented. Highlighted are the efforts that led to the coinvention of the semiconductor laser and the Laboratory's later role in establishing the feasibility of GaInAsP/InP semiconductor lasers for use in fiber telecommunications at 1.3-1.5 micron wavelengths. Descriptions of other important developments include tunable lead-salt semiconductor and solid-state lasers for spectroscopy and LIDAR applications, respectively, as well as ultrastable CO2 lasers for coherent infrared radar.

Modulation Effects in Multi-Section Semiconductor Lasers (Postprint)

DTIC Science & Technology

2013-01-01

resonant modulation of semiconductor lasers beyond relaxation oscillation frequency,” Appl. Phys. Lett., 63, 1459–1461 (1993). [26] J. Helms and K. Petermann ...5, 4–6 (1993). [28] K. Petermann , “External optical feedback phenomena in semiconductor lasers,” IEEE J. Sel. Top. Quantum Elec- tron., 1, 480–489

Gold-reflector-based semiconductor saturable absorber mirror for femtosecond mode-locked Cr4+:YAG lasers

NASA Astrophysics Data System (ADS)

Zhang, Z.; Nakagawa, T.; Torizuka, K.; Sugaya, T.; Kobayashi, K.

We developed a gold reflector based semiconductor saturable absorber mirror that has a sufficiently high reflectivity and a broad bandwidth and has been used to initiate the mode locking in a Cr4+:YAG laser. The laser achieved a similar efficiency to the lasers with Bragg-reflector-based semiconductor saturable absorber mirrors, but delivered a much broader spectrum and a shorter pulse.

The broad applicability of the disk laser principle: from CW to ps

NASA Astrophysics Data System (ADS)

Killi, Alexander; Stolzenburg, Christian; Zawischa, Ivo; Sutter, Dirk; Kleinbauer, Jochen; Schad, Sven; Brockmann, Rüdiger; Weiler, Sascha; Neuhaus, Jörg; Kalfhues, Steffen; Mehner, Eva; Bauer, Dominik; Schlueter, Holger; Schmitz, Christian

2009-02-01

The quasi two-dimensional geometry of the disk laser results in conceptional advantages over other geometries. Fundamentally, the thin disk laser allows true power scaling by increasing the pump spot diameter on the disk while keeping the power density constant. This scaling procedure keeps optical peak intensity, temperature, stress profile, and optical path differences in the disk nearly unchanged. The required pump beam brightness - a main cost driver of DPSSL systems - also remains constant. We present these fundamental concepts and present results in the wide range of multi kW-class CW-sources, high power Q-switched sources and ultrashort pulsed sources.

Semiconductor Laser Low Frequency Noise Characterization

NASA Technical Reports Server (NTRS)

Maleki, Lute; Logan, Ronald T.

1996-01-01

This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

Use of the holmium:YAG laser for percutaneous photothermal ablation of cervical invertebral disks in dogs

NASA Astrophysics Data System (ADS)

Rochat, Mark; Henry, George A.; Campbell, Gregory A.; Stair, Ernest L.; Bartels, Kenneth E.; Dickey, Tom

1999-06-01

Holmium:YAG laser ablation of thoracolumbar disks in dogs has been shown to be an effective alternative to standard surgical fenestration techniques. Our hypothesis was the Holmium:YAG laser could be equally effective and safe when used to ablate cervical intervertebral disks. Six normal chondrodystrophoid breed dogs were used. A sterile, cleaved, 320 micrometers , low-OH quartz optical fiber was inserted into each needle and the laser activated for 40 s at 2 W mean power and a 15 Hz pulse repetition rate for a total of 80 J. Dogs were observed in pain, neurological deficits, or other complications for 24 weeks. At 24 weeks, dogs were euthanatized and cervical disks collected and placed in 10 percent neutral buffered formalin. Disks were decalcified, sectioned at 5 micrometers , and stained with H and E. No problems were encountered during the procedure except occasional difficulties passing the needle by the shoulder to enter the C6-7 disk space. No complications, including neurologic deficits or pain were observe during the 24 weeks. Histologic examination revealed varying degrees of necrosis and defects created in the nucleus pulposus by laser irradiation. In some instances there was evidence of mild adjacent annular and bony thermal injury. On the basis of these result, the Ho:YAG laser appears to be a safe and efficacious method for ablation of canine cervical disks.

Terahertz plasmon-induced transparency based on asymmetric dual-disk resonators coupled to a semiconductor InSb waveguide and its biosensor application

NASA Astrophysics Data System (ADS)

Shahamat, Yadollah; Vahedi, Mohammad

2017-06-01

An ultracompact double eight-shaped plasmonic structure for the realization of plasmon-induced transparency (PIT) in the terahertz (THz) region has been studied. The device consists of a semiconductor-insulator-semiconductor bus waveguide coupled to the dual-disk resonators. Indium antimonide is employed to excite SPP in the THz region. The transmission characteristics of the proposed device are simulated numerically by the finite-difference time-domain method. In addition, a theoretical analysis based on the coupled-mode theory for transmission features is presented and compared with the numerical results. Results are in good agreement. Also, the dependence of PIT frequency characteristics on the radius of the outer disk is discussed in detail. In addition, by removing one of the outer disk resonators, double-PIT peaks can be observed in the transmission spectrum, and the physical mechanism of the appeared peaks is investigated. Finally, an application of the proposed structure for distinguishing different states of DNA molecules is discussed. Results show that the maximum sensitivity with 654 GHz/RIU-1 could be obtained for a single PIT structure. The frequency shifts equal to 37 and 99 GHz could be observed for the denatured and the hybridized DNA states, respectively.

EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

NASA Astrophysics Data System (ADS)

Calvez, S.; Adams, M. J.

2012-09-01

Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early achievements in the June 1987 Special Issue of IEEE Journal of Quantum Electronics. The Millennium Issue of IEEE Journal of Selected Topics in Quantum Electronics presented a further set of articles on historical aspects of the subject as well as a 'snapshot' of current research in June 2000. It is not the intention here to duplicate any of this historical material that is already available, but rather to complement it with personal recollections from researchers who were involved in laser development in the USA, France, Russia and the UK. Hence, in addition to fascinating accounts of the discovery of the theoretical condition for stimulated emission from semiconductors and of the pioneering work at IBM, there are two complementary views of the laser research at the Lebedev Institute, and personal insights into the developments at STL and at Bell Laboratories. These are followed by an account of the scientific and technological connections between the early pioneering breakthroughs and the commercialisation of semiconductor laser products. Turning to the papers from today's researchers, there is coverage of many of the current 'hot' topics including quantum cascade lasers, mid-infrared lasers, high-power lasers, the exciting developments in understanding and exploiting the nonlinear dynamics of lasers, and photonic integrated circuits with extremely high communication data capacity, as well as reports of recent progress on laser materials such as dilute nitrides and bismides, photonic crystals, quantum dots and organic semiconductors. Thanks are due to Jarlath McKenna for sterling support from IOP Publishing and to Peter Blood for instigating this Special Issue and inviting us to serve as Guest Editors.

Semiconductor Laser Multi-Spectral Sensing and Imaging

PubMed Central

Le, Han Q.; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers. PMID:22315555

Semiconductor laser multi-spectral sensing and imaging.

PubMed

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

High-energy ultra-short pulse thin-disk lasers: new developments and applications

NASA Astrophysics Data System (ADS)

Michel, Knut; Klingebiel, Sandro; Schultze, Marcel; Tesseit, Catherine Y.; Bessing, Robert; Häfner, Matthias; Prinz, Stefan; Sutter, Dirk; Metzger, Thomas

2016-03-01

We report on the latest developments at TRUMPF Scientific Lasers in the field of ultra-short pulse lasers with highest output energies and powers. All systems are based on the mature and industrialized thin-disk technology of TRUMPF. Thin Yb:YAG disks provide a reliable and efficient solution for power and energy scaling to Joule- and kW-class picosecond laser systems. Due to its efficient one dimensional heat removal, the thin-disk exhibits low distortions and thermal lensing even when pumped under extremely high pump power densities of 10kW/cm². Currently TRUMPF Scientific Lasers develops regenerative amplifiers with highest average powers, optical parametric amplifiers and synchronization schemes. The first few-ps kHz multi-mJ thin-disk regenerative amplifier based on the TRUMPF thindisk technology was developed at the LMU Munich in 20081. Since the average power and energy have continuously been increased, reaching more than 300W (10kHz repetition rate) and 200mJ (1kHz repetition rate) at pulse durations below 2ps. First experiments have shown that the current thin-disk technology supports ultra-short pulse laser solutions >1kW of average power. Based on few-picosecond thin-disk regenerative amplifiers few-cycle optical parametric chirped pulse amplifiers (OPCPA) can be realized. These systems have proven to be the only method for scaling few-cycle pulses to the multi-mJ energy level. OPA based few-cycle systems will allow for many applications such as attosecond spectroscopy, THz spectroscopy and imaging, laser wake field acceleration, table-top few-fs accelerators and laser-driven coherent X-ray undulator sources. Furthermore, high-energy picosecond sources can directly be used for a variety of applications such as X-ray generation or in atmospheric research.

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.

2018-01-01

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

Ultimate linewidth reduction of a semiconductor laser frequency-stabilized to a Fabry-Pérot interferometer.

PubMed

Bahoura, Messaoud; Clairon, André

2003-11-01

We report a theoretical dynamical analysis on effect of semiconductor laser phase noise on the achievable linewidth when locked to a Fabry-Pérot cavity fringe using a modulation-demodulation frequency stabilization technique such as the commonly used Pound-Drever-Hall frequency locking scheme. We show that, in the optical domain, the modulation-demodulation operation produces, in the presence of semiconductor laser phase noise, two kinds of excess noise, which could be much above the shot noise limit, namely, conversion noise (PM-to-AM) and intermodulation noise. We show that, in typical stabilization conditions, the ultimate semiconductor laser linewidth reduction can be severely limited by the intermodulation excess noise. The modulation-demodulation operation produces the undesirable nonlinear intermodulation effect through which the phase noise spectral components of the semiconductor laser, in the vicinity of even multiples of the modulation frequency, are downconverted into the bandpass of the frequency control loop. This adds a spurious signal, at the modulation frequency, to the error signal and limits the performance of the locked semiconductor laser. This effect, reported initially in the microwave domain using the quasistatic approximation, can be considerably reduced by a convenient choice of the modulation frequency.

Influence of fundamental mode fill factor on disk laser output power and laser beam quality

NASA Astrophysics Data System (ADS)

Cheng, Zhiyong; Yang, Zhuo; Shao, Xichun; Li, Wei; Zhu, Mengzhen

2017-11-01

An three-dimensional numerical model based on finite element method and Fox-Li method with angular spectrum diffraction theoy is developed to calculate the output power and power density distribution of Yb:YAG disk laser. We invest the influence of fundamental mode fill factor(the ratio of fundamental mode size and pump spot size) on the output power and laser beam quality. Due to aspherical aberration and soft aperture effect in laser disk, high beam quality can be achieve with relative lower efficiency. The highest output power of fundamental laser mode is influenced by the fundamental mode fill factor. Besides we find that optimal mode fill factor increase with pump spot size.

Interaction of 1.05 μm and 0.53 μm lasers with gold disks

NASA Astrophysics Data System (ADS)

Shenye, Liu; Yaonan, Ding; Zhijian, Zheng; Daoyuan, Tang

1996-05-01

Gold disks were irradiated with 1.05 μm and 0.53 μm lasers at pulse duration of ˜0.8 ns, intensity ranging from 5×1013 W/cm2 to 4×1015 W/cm2 on the SHEN GUANG I laser facility in China. The experimental results of laser absorption, scattering light, x-ray emission and plasma blow-off are presented in this paper. When the laser irradiated the gold disk obliquely, the angular distribution of scattered lights produced by 0.53 μm lasers disagree with that predicted by the Brillouin scattering theory. The angular distribution is different from that reported previously by the others.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Simple pulsed semiconductor lasers

NASA Astrophysics Data System (ADS)

Hulicius, E.; Abrahám, A.; Sĭmeček, T.

1988-11-01

A brief review is given of the main characteristics of pulsed GaAlAs/GaAs lasers made in Czechoslovakia. A description is given of laser structures with large optical cavities and their electrical, optical, and service life characteristics are reported.

Semiconductor lasers for versatile applications from global communications to on-chip interconnects

NASA Astrophysics Data System (ADS)

Arai, Shigehisa

2015-01-01

Since semiconductor lasers were realized in 1962, various efforts have been made to enrich human life thorough novel equipments and services. Among them optical fiber communications in global communications have brought out marvelous information technology age represented by the internet. In this paper, emerging topics made on GaInAsP/InP based long-wavelength lasers toward ultra-low power consumption semiconductor lasers for optical interconnects in supercomputers as well as in future LSIs are presented.

Gain Coupling of Class A Semiconductor Lasers (Postprint)

DTIC Science & Technology

2010-09-01

Circuits (Wiley, 1995). 15. SimuLase Version 1.4.0.0 by Nonlinear Control Strategies, Inc. (2009). 16. A. Siegman , Lasers (University Science, 1986). 3062 OPTICS LETTERS / Vol. 35, No. 18 / September 15, 2010 3 ...AFRL-RY-WP-TP-2010-1250 GAIN COUPLING OF CLASS A SEMICONDUCTOR LASERS (POSTPRINT) Chris Hessenius, Mahmoud Fallahi, and Jerome Moloney...June 2010 4. TITLE AND SUBTITLE GAIN COUPLING OF CLASS A SEMICONDUCTOR LASERS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c

Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

NASA Astrophysics Data System (ADS)

Marmalyuk, A. A.; Ryaboshtan, Yu L.; Gorlachuk, P. V.; Ladugin, M. A.; Padalitsa, A. A.; Slipchenko, S. O.; Lyutetskiy, A. V.; Veselov, D. A.; Pikhtin, N. A.

2018-03-01

The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

Semiconductor laser using multimode interference principle

NASA Astrophysics Data System (ADS)

Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

2018-01-01

Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

PubMed

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliseev, P G

2012-12-31

A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

External Cavity Coherent Transmitter Modules

DTIC Science & Technology

1990-11-01

Lasers 141 Tunability Aspects of DFB External Cavity Semiconductor Lasers Harish R. D. Sunak & Clark P. Engert Fiber Optical Communications Laboratory...Linewidth Considerations for DFB External Cavity Semiconductor Lasers Harish R. D. Sunak & Clark P. Engert Fiber Optical Communications Laboratory

Use of a novel tunable solid state disk laser as a diagnostic system for laser-induced fluorescence

NASA Astrophysics Data System (ADS)

Paa, Wolfgang; Triebel, Wolfgang

2004-09-01

An all solid state disk laser system-named "Advanced Disk Laser (ADL)" -particularly tailored for laser induced fluorescence (LIF) in combustion processes is presented. The system currently under development comprises an Yb:YAG-seedlaser and a regenerative amplifier. Both are based on the disk laser concept as a new laser architecture. This allows a tunable, compact, efficient diode pumped solid state laser (DPSSL) system with repetition rates in the kHz region. After frequency conversion to the UV-spectral region via third and fourth harmonics generation, this laser-due to its unique properties such as single-frequency operation, wavelength tuneability and excellent beam profile-is well suited for excitation of small molecules such as formaldehyde, OH, NO or O2, which are characteristic for combustion processes. Using the method of planar laser induced fluorescence (PLIF) we observed concentration distributions of formaldehyde in cool and hot flames of a specially designed diethyl-ether burner. The images recorded with 1 kHz repetition rate allow visualizing the distribution of formaldehyde on a 1 ms time scale. This demonstrates for the first time the usability of this novel laser for LIF measurements and is the first step towards integration of the ADL into capsules for drop towers and the international space station.

Thin disk laser with unstable resonator and reduced output coupler

NASA Astrophysics Data System (ADS)

Gavili, Anwar; Shayganmanesh, Mahdi

2018-05-01

In this paper, feasibility of using unstable resonator with reduced output coupling in a thin disk laser is studied theoretically. Unstable resonator is modeled by wave-optics using Collins integral and iterative method. An Yb:YAG crystal with 250 micron thickness is considered as a quasi-three level active medium and modeled by solving rate equations of energy levels populations. The amplification of laser beam in the active medium is calculated based on the Beer-Lambert law and Rigrod method. Using generalized beam parameters method, laser beam parameters like, width, divergence, M2 factor, output power as well as near and far-field beam profiles are calculated for unstable resonator. It is demonstrated that for thin disk laser (with single disk) in spite of the low thickness of the disk which leads to low gain factor, it is possible to use unstable resonator (with reduced output coupling) and achieve good output power with appropriate beam quality. Also, the behavior of output power and beam quality versus equivalent Fresnel number is investigated and optimized value of output coupling for maximum output power is achieved.

Direct solar pumping of semiconductor lasers: A feasibility study

NASA Technical Reports Server (NTRS)

Anderson, Neal G.

1991-01-01

The primary goals of the feasibility study are the following: (1) to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space directly focused sunlight; and (2) to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or battery electrically pumping a current injection laser. With external modulation, such lasers may prove to be efficient sources for intersatellite communications. We proposed to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation for operation at low pump intensities. This report outlines our progress toward these goals. Discussion of several technical details are left to the attached summary abstract.

Structural and optical behavior due to thermal effects in end-pumped Yb:YAG disk lasers.

PubMed

Sazegari, Vahid; Milani, Mohammad Reza Jafari; Jafari, Ahmad Khayat

2010-12-20

We employ a Monte Carlo ray-tracing code along with the ANSYS package to predict the optical and structural behavior in end-pumped CW Yb:YAG disk lasers. The presence of inhomogeneous temperature, stress, and strain distributions is responsible for many deleterious effects for laser action through disk fracture, strain-induced birefringence, and thermal lensing. The thermal lensing, in turn, results in the optical phase distortion in solid-state lasers. Furthermore, the dependence of optical phase distortion on variables such as the heat transfer coefficient, the cooling fluid temperature, and crystal thickness is discussed.

Mode Hopping in Semiconductor Lasers

NASA Astrophysics Data System (ADS)

Heumier, Timothy Alan

Semiconductor lasers have found widespread use in fiberoptic communications, merchandising (bar-code scanners), entertainment (videodisc and compact disc players), and in scientific inquiry (spectroscopy, laser cooling). Some uses require a minimum degree of stability of wavelength which is not met by these lasers: Under some conditions, semiconductor lasers can discontinuously switch wavelengths in a back-and-forth manner. This is called mode hopping. We show that mode hopping is directly correlated to noise in the total intensity, and that this noise is easily detected by a photodiode. We also show that there are combinations of laser case temperature and injection current which lead to mode hopping. Conversely, there are other combinations for which the laser is stable. These results are shown to have implications for controlling mode hopping.

Compact laser amplifier system

DOEpatents

Carr, R.B.

1974-02-26

A compact laser amplifier system is described in which a plurality of face-pumped annular disks, aligned along a common axis, independently radially amplify a stimulating light pulse. Partially reflective or lasing means, coaxially positioned at the center of each annualar disk, radially deflects a stimulating light directed down the common axis uniformly into each disk for amplification, such that the light is amplified by the disks in a parallel manner. Circumferential reflecting means coaxially disposed around each disk directs amplified light emission, either toward a common point or in a common direction. (Official Gazette)

The optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

PubMed

Qiu, Zong-Bo; Zhu, Xin-Jun; Li, Fang-Min; Liu, Xiao; Yue, Ming

2007-07-01

Lasers have been widely used in the field of biology along with the development of laser technology, but the mechanism of the bio-effect of lasers is not explicit. The objective of this paper was to test the optical effect of a laser on protecting wheat from UV-B damage. A patent instrument was employed to emit semiconductor laser (wavelength 650 nm) and incoherent red light, which was transformed from the semiconductor laser. The wavelength, power and lightfleck diameter of the incoherent red light are the same as those of the semiconductor laser. The semiconductor laser (wavelength 650 nm, power density 3.97 mW mm(-2)) and incoherent red light (wavelength 650 nm, power density 3.97 mW mm(-2)) directly irradiated the embryo of wheat seeds for 3 min respectively, and when the seedlings were 12-day-old they were irradiated by UV-B radiation (10.08 kJ m(-2)) for 12 h in the dark. Changes in the concentration of malondialdehyde (MDA), hydrogen peroxide (H(2)O(2)), glutathione (GSH), ascorbate (AsA), carotenoids (CAR), the production rate of superoxide radical (O(2)(-)), the activities of peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) and the growth parameters of seedlings (plant height, leaf area and fresh weight) were measured to test the optical effect of the laser. The results showed that the incoherent red light treatment could not enhance the activities of SOD, POD and CAT and the concentration of AsA and CAR. When the plant cells were irradiated by UV-B, the incoherent red light treatment could not eliminate active oxygen and prevent lipid peroxidation in wheat. The results also clearly demonstrate that the plant DNA was damaged by UV-B radiation and semiconductor laser irradiance had the capability to protect plants from UV-B-induced DNA damage, while the incoherent red light could not. This is the first investigation reporting the optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

Frequency offset locking of AlGaAs semiconductor lasers

NASA Astrophysics Data System (ADS)

Kuboki, Katsuhiko; Ohtsu, Motoichi

1987-04-01

Frequency offset locking is proposed as a technique for tracking and sweeping of a semiconductor laser frequency to improve temporal coherence in semiconductor lasers. Experiments were carried out in which a frequency stabilized laser (of residual frequency fluctuation value of 140 Hz at the integration time between 100 ms and 100 s) was used as a master laser, using a digital phase comparator of a large dynamic range (2 pi x 10 to the 11th rad) in the feedback loop to reduce the phase fluctuations of the beat signal between the master laser and the slave laser. As a result, residual frequency fluctuations of the beat signal were as low as 11 Hz at the integration time of 100 s (i.e., the residual frequency fluctuations of the slave laser were almost equal to those of the master laser).

Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

PubMed

Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

2018-06-01

This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

Single-frequency oscillation of thin-disk lasers due to phase-matched pumping.

PubMed

Vorholt, Christian; Wittrock, Ulrich

2017-09-04

We present a novel pump concept that should lead to single-frequency operation of thin-disk lasers without the need for etalons or other spectral filters. The single-frequency operation is due to matching the standing wave pattern of partially coherent pump light to the standing wave pattern of the laser light inside the disk. The output power and the optical efficiency of our novel pump concept are compared with conventional pumping. The feasibility of our pump concept was shown in previous experiments.

Hybrid organic semiconductor lasers for bio-molecular sensing.

PubMed

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

Design of bent waveguide semiconductor lasers using nonlinear equivalent chirp

NASA Astrophysics Data System (ADS)

Li, Lianyan; Shi, Yuechun; Zhang, Yunshan; Chen, Xiangfei

2018-01-01

Reconstruction equivalent chirp (REC) technique is widely used in the design and fabrication of semiconductor laser arrays and tunable lasers with low cost and high wavelength accuracy. Bent waveguide is a promising method to suppress the zeroth order resonance, which is an intrinsic problem in REC technique. However, it may introduce basic grating chirp and deteriorate the single longitudinal mode (SLM) property of the laser. A nonlinear equivalent chirp pattern is proposed in this paper to compensate the grating chirp and improve the SLM property. It will benefit the realization of low-cost Distributed feedback (DFB) semiconductor laser arrays with accurate lasing wavelength.

Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts

PubMed Central

Choi, Eun-Jeong; Yim, Ju-Young; Koo, Ki-Tae; Seol, Yang-Jo; Lee, Yong-Moo; Ku, Young; Rhyu, In-Chul; Chung, Chong-Pyoung

2010-01-01

Purpose It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm2. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm2 (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm2 energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm2 energy fluency than in the control. Conclusions The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs. PMID:20607054

Thermal management of liquid direct cooled split disk laser

NASA Astrophysics Data System (ADS)

Yang, Huomu; Feng, Guoying; Zhou, Shouhuan

2015-02-01

The thermal effects of a liquid direct cooled split disk laser are modeled and analytically solved. The analytical solutions with the consideration of longitudinal cooling liquid temperature rise have been given to describe the temperature distribution in the split disk and cooling liquid based on the hydrodynamics and heat transfer. The influence of cooling liquid, liquid flowing velocity, thickness of cooling channel and of disk gain medium can also be got from the analytical solutions.

Moderate high power 1 to 20μs and kHz Ho:YAG thin disk laser pulses for laser lithotripsy

NASA Astrophysics Data System (ADS)

Renz, Günther

2015-02-01

An acousto-optically or self-oscillation pulsed thin disk Ho:YAG laser system at 2.1 μm with an average power in the 10 W range will be presented for laser lithotripsy. In the case of cw operation the thin disk Ho:YAG is either pumped with InP diode stacks or with a thulium fiber laser which leads to a laser output power of 20 W at an optical-to-optical efficiency of 30%. For the gain switched mode of operation a modulated Tm-fiber laser is used to produce self-oscillation pulses. A favored pulse lengths for uric acid stone ablation is known to be at a few μs pulse duration which can be delivered by the thin disk laser technology. In the state of the art laser lithotripter, stone material is typically ablated with 250 to 750 μs pulses at 5 to 10 Hz and with pulse energies up to a few Joule. The ablation mechanism is performed in this case by vaporization into stone dust and fragmentation. With the thin disk laser technology, 1 to 20 μs-laser pulses with a repetition rate of a few kHz and with pulse energies in the mJ-range are available. The ablation mechanism is in this case due to a local heating of the stone material with a decomposition of the crystalline structure into calcium carbonate powder which can be handled by the human body. As a joint process to this thermal effect, imploding water vapor bubbles between the fiber end and the stone material produce sporadic shock waves which help clear out the stone dust and biological material.

Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

NASA Astrophysics Data System (ADS)

Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

2016-05-01

It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

Multipass pumped Nd-based thin-disk lasers: continuous-wave laser operation at 1.06 and 0.9 {mu}m with intracavity frequency doubling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavel, Nicolaie; Luenstedt, Kai; Petermann, Klaus

2007-12-01

The laser performances of the 1.06 {mu}m 4F3/2 --> 4I11/2 four-level transition and of the 0.9 {mu}m 4F3/2 --> I9/24 quasi-three-level transition were investigated using multipass pumped Nd-based media in thin-disk geometry. When pumping at 0.81 {mu}m into the 4F5/2 level, continuous-wave laser operation was obtained with powers in excess of 10 W at 1.06 {mu}m, in the multiwatt region at 0.91 {mu}m in Nd:YVO4 and Nd:GdVO4, and at 0.95 {mu}m in Nd:YAG. Intracavity frequency-doubled Nd:YVO4 thin-disk lasers with output powers of 6.4 W at 532 nm and of 1.6 W at 457 nm were realized at this pumping wavelength.more » The pumping at 0.88 {mu}m, which is directed into the 4F3/2 emitting level, was also employed, and Nd:YVO4 and Nd:GdVO4 thin-disk lasers with {approx}9 W output power at 1.06 {mu}m and visible laser radiation at 0.53 {mu}m with output power in excess of 4 W were realized. Frequency-doubled Nd:vanadate thin-disk lasers with deep blue emission at 0.46 {mu}m were obtained under pumping directly into the 4F3/2 emitting level.« less

Laser biostimulation effects on invertebral disks: histological evidence on intra-observer samples. Retrospective double-blind study.

PubMed

Tramontana, Alfonso; Sorge, Roberto; Page, Juan Carlos Miangolarra

2016-12-30

Background and aims: The intervertebral disk degeneration is a pathological process determined by a decrease of mucopolysaccharides in the nucleus pulposus with the consequent dehydration and degeneration of the elastic fibers in the annulus fibrosus of the disk. The laser is a therapeutic tool that has, on the treated tissues, biostimulation effects with an increase of oxidative phosphorylation and production of ATP with an acceleration of the mucopolysaccharides synthesis with a consequent rehydration, biostimulation and production of new elastic fibers. The goal of this project is studying whether the laser stimulation may treat degenerated intervertebral disks. Materials and methods: 60 subjects with the same anthropometric parameters were selected and divided into two randomized groups. 30 subjects underwent laser stimulation, whereas 30 underwent placebo. All 60 subjects underwent a discectomy surgery and the intraoperative findings were examined in a lab, studying the positivity of the PAS reaction and the presence of potential newly formed elastic fibers. Results: It has been shown a higher number of mucopolysaccharides and young newly formed elastic fibers in the group that was treated with laser irradiation with a statistically significant difference, compared to the placebo group (p< 0.0001). Conclusions: Laser biostimulation can be an effective strategy in the therapy of the invertebral disks.

Study on the characteristic and application of DFB semiconductor lasers under optical injection for microwave photonics

NASA Astrophysics Data System (ADS)

Pu, Tao; Wang, Wei wei

2018-01-01

In order to apply optical injection effect in Microwave Photonics system, The red-shift effect of the cavity mode of the DFB semiconductor laser under single-frequency optical injection is studied experimentally, and the red-shift curve of the cavity mode is measured. The wavelength-selective amplification property of the DFB semiconductor laser under multi-frequency optical injection is also investigated, and the gain curves for the injected signals in different injection ratios are measured in the experiment. A novel and simple structure to implement a single-passband MPF with wideband tunability based on the wavelength-selective amplification of a DFB semiconductor laser under optical injection is proposed and experimentally demonstrated. MPFs with center frequency tuned from 13 to 41 GHz are realized in the experiment. A wideband and frequency-tunable optoelectronic oscillator based on a directly modulated distributed feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. By optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency makes the loop oscillate without the necessary of the electrical filter. An experiment is performed; microwave signals with frequency tuned from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers.

The 1.083 micron tunable CW semiconductor laser

NASA Technical Reports Server (NTRS)

Wang, C. S.; Chen, Jan-Shin; Lu, Ken-Gen; Ouyang, Keng

1991-01-01

A tunable CW laser is desired to produce light equivalent to the helium spectral line at 1.08 microns. This laser will serve as an optical pumping source for He-3 and He-4 atoms used in space magnetometers. This light source can be fabricated either as a semiconductor laser diode or a pumped solid state laser. Continuous output power of greater than 10 mW is desired. Semiconductor lasers can be thermally tuned, but must be capable of locking onto the helium resonance lines. Solid state lasers must have efficient pumping sources suitable for space configuration. Additional requirements are as follows: space magnetometer applications will include low mass (less than 0.5 kg), low power consumption (less than 0.75 W), and high stability/reliability for long missions (5-10 years).

Improvement of thermal management in the composite Yb:YAG/YAG thin-disk laser

NASA Astrophysics Data System (ADS)

Kuznetsov, I. I.; Mukhin, I. B.; Palashov, O. V.

2016-04-01

To improve the thermal management in the composite Yb:YAG/YAG thin-disk laser a new design of laser head is developed. Thermal-induced phase distortions, small signal gain and lasing in the upgraded laser head are investigated and compared with previously published results. A substantial decrease of the thermal lens optical power and phase aberrations and increase of the laser slope efficiency are observed. A continuous-wave laser with 440 W average power and 44% slope efficiency is constructed.

Quantum memory node based on a semiconductor double quantum dot in a laser-controlled optical resonator

NASA Astrophysics Data System (ADS)

Tsukanov, A. V.; Kateev, I. Yu

2017-08-01

The concept of a quantum node consisting of a memory qubit and a frequency convertor is proposed and analysed. The memory qubit is presented by a semiconductor four-level double quantum dot (DQD) placed in an optical microresonator (MR). The DQD contains an electron in the quantised part of the conduction band and the MR can be populated by a certain number of photons. The DQD and MR states are controlled be applying the laser and electrostatic fields. The difference between the telecommunication frequency of the photon (transport qubit) supplied to the system through a waveguide and the frequency of the electronic transition in the DQD is compensated for using an auxiliary element, i.e. a frequency convertor based on a single quantum dot (QD). This design allows the electron - photon state of the hybrid system to be controlled by an appropriate variation of the field parameters and the switching between resonance and nonresonance DQD and MR interaction regimes. As an example, a GaAs DQD placed in a microdisk MR is studied. A numerical technique for modelling an optical spectrum of a microdisk MR with an additional layer (AL) deposited on its surface is developed. Using this technique, the effect of the AL on the MR eigenmode properties is investigated and the possibility of tuning its frequency to the QD electronic transition frequency by depositing an AL on the disk surface is demonstrated.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Experimental demonstration of a multi-wavelength distributed feedback semiconductor laser array with an equivalent chirped grating profile based on the equivalent chirp technology.

PubMed

Li, Wangzhe; Zhang, Xia; Yao, Jianping

2013-08-26

We report, to the best of our knowledge, the first realization of a multi-wavelength distributed feedback (DFB) semiconductor laser array with an equivalent chirped grating profile based on equivalent chirp technology. All the lasers in the laser array have an identical grating period with an equivalent chirped grating structure, which are realized by nonuniform sampling of the gratings. Different wavelengths are achieved by changing the sampling functions. A multi-wavelength DFB semiconductor laser array is fabricated and the lasing performance is evaluated. The results show that the equivalent chirp technology is an effective solution for monolithic integration of a multi-wavelength laser array with potential for large volume fabrication.

Measuring the Edge Recombination Velocity of Monolayer Semiconductors.

PubMed

Zhao, Peida; Amani, Matin; Lien, Der-Hsien; Ahn, Geun Ho; Kiriya, Daisuke; Mastandrea, James P; Ager, Joel W; Yablonovitch, Eli; Chrzan, Daryl C; Javey, Ali

2017-09-13

Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing this material for high performance electronic and optoelectronic devices. WS 2 monolayers patterned into disks of varying diameters are used to experimentally explore the influence of edges on the material's optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τ effective , as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on nonradiative carrier recombination. The unpassivated WS 2 monolayer disks yield an ERV ∼ 4 × 10 4 cm/s. This work quantifies the nonradiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization approach that can be used to experimentally explore edge passivation methods for 2D materials.

Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

PubMed Central

Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

2016-01-01

In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

Direct solar pumping of semiconductor lasers: A feasibility study

NASA Technical Reports Server (NTRS)

Anderson, Neal G.

1992-01-01

This report describes results of NASA Grant NAG-1-1148, entitled Direct Solar Pumping of Semiconductor Lasers: A Feasibility Study. The goals of this study were to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space with directly focused sunlight and to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or storage battery electrically pumping a current injection laser. With external modulation, such lasers could perhaps be efficient sources for intersatellite communications. We proposed specifically to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation at low pump intensities. These tasks have been accomplished, as described in this report of our completed project. The report is organized as follows: Some general considerations relevant to the solar-pumped semiconductor laser problem are discussed in Section 2, and the types of structures chosen for specific investigation are described. The details of the laser model we developed for this work are then outlined in Section 3. In Section 4, results of our study are presented, including designs for optimum lattice-matched and strained-layer solar-pumped quantum-well lasers and threshold pumping estimates for these structures. It was hoped at the outset of this work that structures could be identified which could be expected to operate continuously at solar photoexcitation intensities of several thousand suns, and this indeed turned out to be the case as described in this section. Our project is summarized in Section 5, and information on publications resulting from this work is provided in Section 6.

Laser beam modeling in optical storage systems

NASA Technical Reports Server (NTRS)

Treptau, J. P.; Milster, T. D.; Flagello, D. G.

1991-01-01

A computer model has been developed that simulates light propagating through an optical data storage system. A model of a laser beam that originates at a laser diode, propagates through an optical system, interacts with a optical disk, reflects back from the optical disk into the system, and propagates to data and servo detectors is discussed.

TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing

NASA Astrophysics Data System (ADS)

Shan, Fei; Kim, Sung-Jin

2018-02-01

We report on thin-film transistors (TFTs) based on titanium oxide (TiOx) prepared using femtosecond laser pre-annealing for electrical application of n-type channel oxide transparent TFTs. Amorphous TFTs using TiOx semiconductors as an active layer have a low-temperature process and show remarkable electrical performance. And the femtosecond laser pre-annealing process has greater flexibility and development space for semiconductor production activity, with a fast preparation method. TFTs with a TiOx semiconductor pre-annealed via femtosecond laser at 3 W have a pinhole-free and smooth surface without crystal grains.

Theoretical analysis of a method for extracting the phase of a phase-amplitude modulated signal generated by a direct-modulated optical injection-locked semiconductor laser

NASA Astrophysics Data System (ADS)

Lee, Hwan; Cho, Jun-Hyung; Sung, Hyuk-Kee

2017-05-01

The phase modulation (PM) and amplitude modulation (AM) of optical signals can be achieved using a direct-modulated (DM) optical injection-locked (OIL) semiconductor laser. We propose and theoretically analyze a simple method to extract the phase component of a PM signal produced by a DM-OIL semiconductor laser. The pure AM component of the combined PM-AM signal can be isolated by square-law detection in a photodetector and can then be used to compensate for the PM-AM signal based on an optical homodyne method. Using the AM compensation technique, we successfully developed a simple and cost-effective phase extraction method applicable to the PM-AM optical signal of a DM-OIL semiconductor laser.

Tunable semiconductor lasers

NASA Technical Reports Server (NTRS)

Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

2006-01-01

Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

A compact semiconductor digital interferometer and its applications

NASA Astrophysics Data System (ADS)

Britsky, Oleksander I.; Gorbov, Ivan V.; Petrov, Viacheslav V.; Balagura, Iryna V.

2015-05-01

The possibility of using semiconductor laser interferometers to measure displacements at the nanometer scale was demonstrated. The creation principles of miniature digital Michelson interferometers based on semiconductor lasers were proposed. The advanced processing algorithm for the interferometer quadrature signals was designed. It enabled to reduce restrictions on speed of measured movements. A miniature semiconductor digital Michelson interferometer was developed. Designing of the precision temperature stability system for miniature low-cost semiconductor laser with 0.01ºС accuracy enabled to use it for creation of compact interferometer rather than a helium-neon one. Proper firmware and software was designed for the interferometer signals real-time processing and conversion in to respective shifts. In the result the relative displacement between 0-500 mm was measured with a resolution of better than 1 nm. Advantages and disadvantages of practical use of the compact semiconductor digital interferometer in seismometers for the measurement of shifts were shown.

On the possibility of using the dynamic Franz - Keldysh effect to detect the parameters of high-power IR laser radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grigor'ev, A M

2011-05-31

The increase in the absorption of light by a semiconductor (when the light photon energy is somewhat smaller than the semiconductor bandgap or equals it) in the presence of a strong light wave (for which the semiconductor is transparent) has been investigated. The possibility of designing novel light detectors for measuring the energy parameters and spatial and temporal characteristics of high-power IR laser radiation is demonstrated. (measurement of laser radiation parameters)

Semiconductor laser technology for remote sensing experiments

NASA Technical Reports Server (NTRS)

Katz, Joseph

1988-01-01

Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

Quantifying stochasticity in the dynamics of delay-coupled semiconductor lasers via forbidden patterns.

PubMed

Tiana-Alsina, Jordi; Buldú, Javier M; Torrent, M C; García-Ojalvo, Jordi

2010-01-28

We quantify the level of stochasticity in the dynamics of two mutually coupled semiconductor lasers. Specifically, we concentrate on a regime in which the lasers synchronize their dynamics with a non-zero lag time, and the leader and laggard roles alternate irregularly between the lasers. We analyse this switching dynamics in terms of the number of forbidden patterns of the alternate time series. The results reveal that the system operates in a stochastic regime, with the level of stochasticity decreasing as the lasers are pumped further away from their lasing threshold. This behaviour is similar to that exhibited by a single semiconductor laser subject to external optical feedback, as its dynamics shifts from the regime of low-frequency fluctuations to coherence collapse. This journal is © 2010 The Royal Society

Heteroclinic dynamics of coupled semiconductor lasers with optoelectronic feedback.

PubMed

Shahin, S; Vallini, F; Monifi, F; Rabinovich, M; Fainman, Y

2016-11-15

Generalized Lotka-Volterra (GLV) equations are important equations used in various areas of science to describe competitive dynamics among a population of N interacting nodes in a network topology. In this Letter, we introduce a photonic network consisting of three optoelectronically cross-coupled semiconductor lasers to realize a GLV model. In such a network, the interaction of intensity and carrier inversion rates, as well as phases of laser oscillator nodes, result in various dynamics. We study the influence of asymmetric coupling strength and frequency detuning between semiconductor lasers and show that inhibitory asymmetric coupling is required to achieve consecutive amplitude oscillations of the laser nodes. These studies were motivated primarily by the dynamical models used to model brain cognitive activities and their correspondence with dynamics obtained among coupled laser oscillators.

Highly efficient 400  W near-fundamental-mode green thin-disk laser.

PubMed

Piehler, Stefan; Dietrich, Tom; Rumpel, Martin; Graf, Thomas; Ahmed, Marwan Abdou

2016-01-01

We report on the efficient generation of continuous-wave, high-brightness green laser radiation. Green lasers are particularly interesting for reliable and reproducible deep-penetration welding of copper or for pumping Ti:Sa oscillators. By intracavity second-harmonic generation in a thin-disk laser resonator designed for fundamental-mode operation, an output power of up to 403 W is demonstrated at a wavelength of 515 nm with almost diffraction-limited beam quality. The unprecedented optical efficiency of 40.7% of green output power with respect to the pump power of the thin-disk laser is enabled by the intracavity use of a highly efficient grating waveguide mirror, which combines the functions of wavelength stabilization and spectral narrowing, as well as polarization selection in a single element.

Technical advantages of disk laser technology in short and ultrashort pulse processes

NASA Astrophysics Data System (ADS)

Graham, P.; Stollhof, J.; Weiler, S.; Massa, S.; Faisst, B.; Denney, P.; Gounaris, E.

2011-03-01

This paper demonstrates that disk-laser technology introduces advantages that increase efficiency and allows for high productivity in micro-processing in both the nanosecond (ns) and picosecond (ps) regimes. Some technical advantages of disk technology include not requiring good pump beam quality or special wavelengths for pumping of the disk, high optical efficiencies, no thermal lensing effects and a possible scaling of output power without an increase of pump beam quality. With cavity-dumping, the pulse duration of the disk laser can be specified between 30 and hundreds of nanoseconds, but is independent of frequency, thus maintaining process stability. TRUMPF uses this technology in the 750 watts average power laser TruMicro 7050. High intensity, along with fluency, is important for high ablation rates in thinfilm removal. Thus, these ns lasers show high removal rates, above 60 cm2/s, in thin-film solar cell production. In addition, recent results in paint-stripping of aerospace material prove the green credentials and high processing rates inherent with this technology as it can potentially replace toxic chemical processes. The ps disk technology meanwhile is used in, for example, scribing of solar cells, wafer dicing and drilling injector nozzles, as the pulse duration is short enough to minimize heat input in the laser-matter interaction. In the TruMicro Series 5000, the multi-pass regenerative amplifier stage combines high optical-optical efficiencies together with excellent output beam quality for pulse durations of only 6 ps and high pulse energies of up to 0.25 mJ.

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance

DTIC Science & Technology

2017-02-01

MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance (Invited paper) Christine A...epitaxial layers in quantum cascade lasers (QCLs) has a primary impact on QCL operation, and establishing correlations between epitaxial growth and materials...QCLs emitting in this range. Index terms – Quantum cascade lasers, semiconductor growth, semiconductor epitaxial layers, infrared emitters. I

Thermal modeling of head disk interface system in heat assisted magnetic recording

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vemuri, Sesha Hari; Seung Chung, Pil; Jhon, Myung S., E-mail: mj3a@andrew.cmu.edu

2014-05-07

A thorough understanding of the temperature profiles introduced by the heat assisted magnetic recording is required to maintain the hotspot at the desired location on the disk with minimal heat damage to other components. Here, we implement a transient mesoscale modeling methodology termed lattice Boltzmann method (LBM) for phonons (which are primary carriers of energy) in the thermal modeling of the head disk interface (HDI) components, namely, carbon overcoat (COC). The LBM can provide more accurate results compared to conventional Fourier methodology by capturing the nanoscale phenomena due to ballistic heat transfer. We examine the in-plane and out-of-plane heat transfermore » in the COC via analyzing the temperature profiles with a continuously focused and pulsed laser beam on a moving disk. Larger in-plane hotspot widening is observed in continuously focused laser beam compared to a pulsed laser. A pulsed laser surface develops steeper temperature gradients compared to continuous hotspot. Furthermore, out-of-plane heat transfer from the COC to the media is enhanced with a continuous laser beam then a pulsed laser, while the temperature takes around 140 fs to reach the bottom surface of the COC. Our study can lead to a realistic thermal model describing novel HDI material design criteria for the next generation of hard disk drives with ultra high recording densities.« less

Implementing New Methods of Laser Marking of Items in the Nuclear Material Control and Accountability System at SSC RF-IPPE: An Automated Laser Marking System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Regoushevsky, V I; Tambovtsev, S D; Dvukhsherstnov, V G

2009-05-18

For over ten years SSC RF-IPPE, together with the US DOE National Laboratories, has been working on implementing automated control and accountability methods for nuclear materials and other items. Initial efforts to use adhesive bar codes or ones printed (painted) onto metal revealed that these methods were inconvenient and lacked durability under operational conditions. For NM disk applications in critical stands, there is the additional requirement that labels not affect the neutron characteristics of the critical assembly. This is particularly true for the many stainless-steel clad disks containing highly enriched uranium (HEU) and plutonium that are used at SSC RF-IPPEmore » for modeling nuclear power reactors. In search of an alternate method for labeling these disks, we tested several technological options, including laser marking and two-dimensional codes. As a result, the method of laser coloring was chosen in combination with Data Matrix ECC200 symbology. To implement laser marking procedures for the HEU disks and meet all the nuclear material (NM) handling standards and rules, IPPE staff, with U.S. technical and financial support, implemented an automated laser marking system; there are also specially developed procedures for NM movements during laser marking. For the laser marking station, a Zenith 10F system by Telesis Technologies (10 watt Ytterbium Fiber Laser and Merlin software) is used. The presentation includes a flowchart for the automated system and a list of specially developed procedures with comments. Among other things, approaches are discussed for human-factor considerations. To date, markings have been applied to numerous steel-clad HEU disks, and the work continues. In the future this method is expected to be applied to other MC&A items.« less

Diode pumped solid state kilohertz disk laser system for time-resolved combustion diagnostics under microgravity at the drop tower Bremen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wagner, Volker; Paa, Wolfgang; Triebel, Wolfgang

We describe a specially designed diode pumped solid state laser system based on the disk laser architecture for combustion diagnostics under microgravity (μg) conditions at the drop tower in Bremen. The two-stage oscillator-amplifier-system provides an excellent beam profile (TEM{sub 00}) at narrowband operation (Δλ < 1 pm) and is tunable from 1018 nm to 1052 nm. The laser repetition rate of up to 4 kHz at pulse durations of 10 ns enables the tracking of processes on a millisecond time scale. Depending on the specific issue it is possible to convert the output radiation up to the fourth harmonic aroundmore » 257 nm. The very compact laser system is integrated in a slightly modified drop capsule and withstands decelerations of up to 50 g (>11 ms). At first the concept of the two-stage disk laser is briefly explained, followed by a detailed description of the disk laser adaption to the drop tower requirements with special focus on the intended use under μg conditions. In order to demonstrate the capabilities of the capsule laser as a tool for μg combustion diagnostics, we finally present an investigation of the precursor-reactions before the droplet ignition using 2D imaging of the Laser Induced Fluorescence of formaldehyde.« less

High Speed Laser with 100 Ghz Resonance Frequency

DTIC Science & Technology

2014-02-28

applications, such as opto - electronic oscillators . Recently, however, by optimizing the detuning frequency and injection ratio, we have shown enhanced...semiconductor lasers has been limited by relaxation oscillation frequency to < 40 GHz. By using strong optical injection locking, we report resonance...direct modulation bandwidth of semiconductor lasers. In a typical laser, the relaxation oscillation [resonance] frequency is a figure-of-merit that is a

Development of high yielding photonic light delivery system for photodynamic therapy of esophageal carcinomas

NASA Astrophysics Data System (ADS)

Premasiri, Amaranath; Happawana, Gemunu; Rosen, Arye

2007-02-01

Photodynamic therapy (PDT) is an approved treatment modality for Barrett's and invasive esophageal carcinoma. Proper Combination of photosentizing agent, oxygen, and a specific wavelength of light to activate the photosentizing agents is necessary for the cytotoxic destruction of cancerous cells by PDT. As a light source expensive solid-state laser sources currently are being used for the treatment. Inexpensive semiconductor lasers have been suggested for the light delivery system, however packaging of semiconductor lasers for optimal optical power output is challenging. In this paper, we present a multidirectional direct water-cooling of semiconductor lasers that provides a better efficiency than the conventional unidirectional cooling. AlGaAsP lasers were tested under de-ionized (DI) water and it is shown that the optical power output of the lasers under the DI water is much higher than that of the uni-directional cooling of lasers. Also, in this paper we discuss how direct DI water-cooling can optimize power output of semiconductor lasers. Thereafter an optimal design of the semiconductor laser package is shown with the DI water-cooling system. Further, a microwave antenna is designed which is to be imprinted on to a balloon catheter in order to provide local heating of esophagus, leading to an increase in local oxygenation of the tumor to generate an effective level of singlet oxygen for cellular death. Finally the optimal level of light energy that is required to achieve the expected level of singlet oxygen is modeled to design an efficient PDT protocol.

Edge-facet pumped, multi-aperture, thin-disk laser geometry for very high average power output scaling

DOEpatents

Zapata, Luis E.

2004-12-21

The average power output of a laser is scaled, to first order, by increasing the transverse dimension of the gain medium while increasing the thickness of an index matched light guide proportionately. Strategic facets cut at the edges of the laminated gain medium provide a method by which the pump light introduced through edges of the composite structure is trapped and passes through the gain medium repeatedly. Spontaneous emission escapes the laser volume via these facets. A multi-faceted disk geometry with grooves cut into the thickness of the gain medium is optimized to passively reject spontaneous emission generated within the laser material, which would otherwise be trapped and amplified within the high index composite disk. Such geometry allows the useful size of the laser aperture to be increased, enabling the average laser output power to be scaled.

Integrated semiconductor twin-microdisk laser under mutually optical injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due tomore » strong optical interaction between the two microdisks.« less

Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

PubMed

Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

2011-04-25

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE PAGES

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit; ...

2017-06-01

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

PubMed Central

Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

2016-01-01

Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

Light sources based on semiconductor current filaments

DOEpatents

Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

2003-01-01

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A.; Shashkin, I. S.; Bobretsova, Yu. K.

2016-10-15

Pulse-pumped MOVPE-fabricated (metal-organic vapor-phase epitaxy) semiconductor lasers emitting in the spectral ranges 1000–1100 and 1400–1600 nm at temperatures of 110–120 K are studied. It is found that cooling the lasers for both spectral ranges to low temperature results in their light–current curves approaching linearity, and an optical power of, respectively, 110 and 20 W can be attained. The low-temperature effect is reduced for lasers emitting in the spectral range 1400–1600 nm. The processes affecting a rise in the internal optical loss in semiconductor lasers are considered. It is shown that an increase in the carrier concentration in the waveguide ofmore » a laser structure greatly depends on temperature and is determined by the noninstantaneous capture (capture rate) of carriers from the waveguide into the active region. It is demonstrated that, upon lowering the temperature to 115K, the concentration of electrons and holes in the waveguide becomes lower, which leads to a significant decrease in the internal optical loss and to an increase in the output optical power of the semiconductor laser.« less

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

1990-01-01

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

Surface-emitting circular DFB, disk- and ring- Bragg resonator lasers with chirped gratings: a unified theory and comparative study.

PubMed

Sun, Xiankai; Yariv, Amnon

2008-06-09

We have developed a theory that unifies the analysis of the modal properties of surface-emitting chirped circular grating lasers. This theory is based on solving the resonance conditions which involve two types of reflectivities of chirped circular gratings. This approach is shown to be in agreement with previous derivations which use the characteristic equations. Utilizing this unified analysis, we obtain the modal properties of circular DFB, disk-, and ring- Bragg resonator lasers. We also compare the threshold gain, single mode range, quality factor, emission efficiency, and modal area of these types of circular grating lasers. It is demonstrated that, under similar conditions, disk Bragg resonator lasers have the highest quality factor, the highest emission efficiency, and the smallest modal area, indicating their suitability in low-threshold, high-efficiency, ultracompact laser design, while ring Bragg resonator lasers have a large single mode range, high emission efficiency, and large modal area, indicating their suitability for high-efficiency, large-area, high-power applications.

Method for manufacturing electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1988-11-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Electrical contacts for a thin-film semiconductor device

DOEpatents

Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

1989-08-08

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

PubMed

Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E

2006-03-15

Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

REVIEW ARTICLE: Harmonically mode-locked semiconductor-based lasers as high repetition rate ultralow noise pulse train and optical frequency comb sources

NASA Astrophysics Data System (ADS)

Quinlan, F.; Ozharar, S.; Gee, S.; Delfyett, P. J.

2009-10-01

Recent experimental work on semiconductor-based harmonically mode-locked lasers geared toward low noise applications is reviewed. Active, harmonic mode-locking of semiconductor-based lasers has proven to be an excellent way to generate 10 GHz repetition rate pulse trains with pulse-to-pulse timing jitter of only a few femtoseconds without requiring active feedback stabilization. This level of timing jitter is achieved in long fiberized ring cavities and relies upon such factors as low noise rf sources as mode-lockers, high optical power, intracavity dispersion management and intracavity phase modulation. When a high finesse etalon is placed within the optical cavity, semiconductor-based harmonically mode-locked lasers can be used as optical frequency comb sources with 10 GHz mode spacing. When active mode-locking is replaced with regenerative mode-locking, a completely self-contained comb source is created, referenced to the intracavity etalon.

Semiconductor devices incorporating multilayer interference regions

DOEpatents

Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

1987-08-31

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

DOEpatents

Haller, Eugene E.; Brundermann, Erik

2000-01-01

A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

Non-Shilnikov cascades of spikes and hubs in a semiconductor laser with optoelectronic feedback.

PubMed

Freire, Joana G; Gallas, Jason A C

2010-09-01

Incomplete homoclinic scenarios were recently measured in a semiconductor laser with optoelectronic feedback. We show here that such a laser contains cascades of spirals of periodic oscillations and hubs which look identical to the familiar ones observed in complete homoclinic scenarios. This means that hubs are far more general than presumed so far, being not limited by Shilnikov's theorem. Laser hubs open the possibility of measuring complex distributions of non-Shilnikov laser oscillations, and we briefly discuss how to do it.

Calibration-free absolute frequency response measurement of directly modulated lasers based on additional modulation.

PubMed

Zhang, Shangjian; Zou, Xinhai; Wang, Heng; Zhang, Yali; Lu, Rongguo; Liu, Yong

2015-10-15

A calibration-free electrical method is proposed for measuring the absolute frequency response of directly modulated semiconductor lasers based on additional modulation. The method achieves the electrical domain measurement of the modulation index of directly modulated lasers without the need for correcting the responsivity fluctuation in the photodetection. Moreover, it doubles measuring frequency range by setting a specific frequency relationship between the direct and additional modulation. Both the absolute and relative frequency response of semiconductor lasers are experimentally measured from the electrical spectrum of the twice-modulated optical signal, and the measured results are compared to those obtained with conventional methods to check the consistency. The proposed method provides calibration-free and accurate measurement for high-speed semiconductor lasers with high-resolution electrical spectrum analysis.

Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices

DOEpatents

Horn, Kevin M.

2013-07-09

A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

Hybrid semiconductor fiber lasers for telecommunications

NASA Astrophysics Data System (ADS)

Khalili, Alireza

2006-12-01

Highly stable edge emitting semiconductor lasers are of utmost importance in most telecommunications applications where high-speed data transmission sets strict limits on the purity of the laser signal. Unfortunately, most edge emitting semiconductor lasers, unlike gaseous or solid-state laser sources, operate with many closely spaced axial modes, which accounts for the observed instability and large spikes in the output spectrum of such lasers. Consequently, in most telecom applications distributed feedback (DFB) or distributed Bragg reflector (DBR) techniques are used to ensure stability and single-frequency operation, further adding to the cost and complexity of such lasers. Additionally, coupling of the highly elliptical output beam of these lasers to singlemode fibers complicates the packaging procedure and sub-micron alignment of various optical components is often necessary. Utilizing the evanescent coupling between a semiconductor antiresonant reflecting optical waveguide (ARROW) and a side polished fiber, this thesis presents an alternative side-coupled laser module that eliminates the need for the cumbersome multi-component alignment processes of conventional laser packages, and creates an inherent mode selection mechanism that guarantees singlemode radiation into the fiber without any gratings. We have been able to demonstrate the first side-coupled fiber semiconductor laser in this technology, coupling more than 3mW of power at 850nm directly into a 5/125mum singlemode fiber. This mixed-cavity architecture yields a high thermal stability (˜0.06nm/°C), and negligible spectral spikes are observed. Theoretical background and simulation results, as well as several supplementary materials are also presented to further rationalize the experimental data. A side-coupled light-emitter and pre-amplifier are also proposed and discussed. We also study different architectures for attaining higher efficiency, higher output power, and wavelength tunability in such lasers. Finally, we discuss possible venues for integration of these side-coupled devices in a telecommunication system. Approved for publication.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

NASA Astrophysics Data System (ADS)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present new insight into the physics of nonlinear coherent pulse propagation phenomena in active (semiconductor) gain media. Our numerical full time-domain simulations are shown to generally agree well with analytical predictions, while in the case of optical pulses with large pulse areas or few-cycle pulses they reveal the limits of analytic approaches. Finally, it is demonstrated that coherent ultrafast nonlinear propagation effects become less distinctive if we apply a realistic model of the quantum well semiconductor gain material, consider characteristic loss channels and take into account de-phasing processes and homogeneous broadening.

Receiver design, performance analysis, and evaluation for space-borne laser altimeters and space-to-space laser ranging systems

NASA Technical Reports Server (NTRS)

Davidson, Frederic M.; Sun, Xiaoli; Field, Christopher T.

1995-01-01

This Interim report consists of a manuscript, 'Receiver Design for Satellite to Satellite Laser Ranging Instrument,' and copies of two papers we co-authored, 'Demonstration of High Sensitivity Laser Ranging System' and 'Semiconductor Laser-Based Ranging Instrument for Earth Gravity Measurements. ' These two papers were presented at the conference Semiconductor Lasers, Advanced Devices and Applications, August 21 -23, 1995, Keystone Colorado. The manuscript is a draft in the preparation for publication, which summarizes the theory we developed on space-borne laser ranging instrument for gravity measurements.

FIBER AND INTEGRATED OPTICS. OTHER TOPICS IN QUANTUM ELECTRONICS: Laser generation of dislocations and mechanism of anisotropic melting of semiconductor surfaces

NASA Astrophysics Data System (ADS)

Volodin, B. L.; Emel'yanov, Vladimir I.

1990-05-01

An analysis is made of a vacancy-deformation mechanism of generation of dislocations by laser radiation involving condensation of laser-induced vacancies when the vacancy concentration exceeds a certain critical value. The theory can be used to estimate the radius of the resultant dislocation loops and their density. It is used to interpret anisotropic laser melting of semiconductor surfaces.

Power- or frequency-driven hysteresis for continuous-wave optically injected distributed-feedback semiconductor lasers.

PubMed

Blin, Stéphane; Vaudel, Olivier; Besnard, Pascal; Gabet, Renaud

2009-05-25

Bistabilities between a steady (or pulsating, chaotic) and different pulsating regimes are investigated for an optically injected semi-conductor laser. Both numerical and experimental studies are reported for continuous-wave single-mode semiconductor distributed-feedback lasers emitting at 1.55 microm. Hysteresis are driven by either changing the optically injected power or the frequency difference between both lasers. The effect of the injected laser pumping rate is also examined. Systematic mappings of the possible laser outputs (injection locking, bimodal, wave mixing, chaos or relaxation oscillations) are carried out. At small pumping rates (1.2 times threshold), only locking and bimodal regimes are observed. The extent of the bistable area is either 11 dB or 35 GHz, depending on the varying parameters. At high pumping rates (4 times threshold), numerous injection regimes are observed. Injection locking and its bistabilities are also reported for secondary longitudinal modes.

Modes in light wave propagating in semiconductor laser

NASA Technical Reports Server (NTRS)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI) Mass Spectrometric Approaches to Proteome Analysis

PubMed Central

Kailasa, Suresh Kumar; Cheng, Kuang-Hung; Wu, Hui-Fen

2013-01-01

Semiconductor quantum dots (QDs) or nanoparticles (NPs) exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs) in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis. PMID:28788422

Dynamical regimes and intracavity propagation delay in external cavity semiconductor diode lasers

NASA Astrophysics Data System (ADS)

Jayaprasath, E.; Sivaprakasam, S.

2017-11-01

Intracavity propagation delay, a delay introduced by a semiconductor diode laser, is found to significantly influence synchronization of multiple semiconductor diode lasers, operated either in stable or in chaotic regime. Two diode lasers coupled in unidirectional scheme is considered in this numerical study. A diode laser subjected to an optical feedback, also called an external cavity diode laser, acts as the transmitter laser (TL). A solitary diode laser acts as the receiver laser (RL). The optical output of the TL is coupled to the RL and laser operating parameters are optimized to achieve synchronization in their output intensities. The time-of-flight between the TL and RL introduces an intercavity time delay in the dynamics of RL. In addition to this, an intracavity propagation delay arises as the TL's field propagated within the RL. This intracavity propagation delay is evaluated by cross-correlation analysis between the output intensities of the lasers. The intracavity propagation delay is found to increase as the external cavity feedback rate of TL is increased, while an increment in the injection rate between the two lasers resulted in a reduction of intracavity propagation delay.

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

NASA Technical Reports Server (NTRS)

Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

1993-01-01

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

PubMed Central

Elia, Angela; Lugarà, Pietro Mario; Di Franco, Cinzia; Spagnolo, Vincenzo

2009-01-01

The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques. PMID:22303143

Recent Results With Coupled Opto-Electronic Oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, L.; Wu, C.; Davis, L.; Forouhar, S.

1998-07-01

We present experimental results of coupled opto-electronic oscillators (COEOs) constructed with a semiconductor optical-amplifier-based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding-pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 ps and RF signals as high in frequency as 18 GHz with a spectral purity comparable to an HP 8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Recent results with the coupled opto-electronic oscillator

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-11-01

We present experimental results of coupled opto-electronic oscillators (COEO) constructed with a semiconductor optical amplifier based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Ring resonator based narrow-linewidth semiconductor lasers

NASA Technical Reports Server (NTRS)

Ksendzov, Alexander (Inventor)

2005-01-01

The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Computer model for quasioptic waveguide lasers

NASA Astrophysics Data System (ADS)

Wenzel, H.; Wünsche, H. J.

1988-11-01

A description is given of a numerical model of a semiconductor laser with a quasioptic waveguide (index guide). This model can be used on a personal computer. The model can be used to find the radiation field distributions in the vertical and lateral directions, the pump currents at the threshold, and also to solve dynamic rate equations.

Photonic Arbitrary Waveform Generation Technology

DTIC Science & Technology

2006-06-01

locked external- cavity semiconductor diode ring laser “, Optics Letters, Vol. 27, No. 9 , 719-721, (2002). [22] S. Gee, F. Quinlan, S. Ozharar... optical pulses that one is accustomed to. Modelocked semiconductor lasers are used to generate a set of phase locked optical frequencies on a periodic...The corresponding optical spectrum of the laser consists of a comb of periodically spaced, phase - locked

Laser illuminator and optical system for disk patterning

DOEpatents

Hackel, Lloyd A.; Dane, C. Brent; Dixit, Shamasundar N.; Everett, Mathew; Honig, John

2000-01-01

Magnetic recording media are textured over areas designated for contact in order to minimize friction with data transducing heads. In fabricating a hard disk, an aluminum nickel-phosphorous substrate is polished to a specular finish. A mechanical means is then used to roughen an annular area intended to be the head contact band. An optical and mechanical system allows thousands of spots to be generated with each laser pulse, allowing the textured pattern to be rapidly generated with a low repetition rate laser and an uncomplicated mechanical system. The system uses a low power laser, a beam expander, a specially designed phase plate, a prism to deflect the beam, a lens to transmit the diffraction pattern to the far field, a mechanical means to rotate the pattern and a trigger system to fire the laser when sections of the pattern are precisely aligned. The system generates an annular segment of the desired pattern with which the total pattern is generated by rotating the optical system about its optic axis, sensing the rotational position and firing the laser as the annular segment rotates into the next appropriate position. This marking system can be integrated into a disk sputtering system for manufacturing magnetic disks, allowing for a very streamlined manufacturing process.

Efficiency of soft tissue incision with a novel 445-nm semiconductor laser.

PubMed

Braun, Andreas; Kettner, Moritz; Berthold, Michael; Wenzler, Johannes-Simon; Heymann, Paul Günther Baptist; Frankenberger, Roland

2018-01-01

Using a 445-nm semiconductor laser for tissue incision, an effective cut is expected due to the special absorption properties of blue laser light in soft tissues. The aim of the present study was the histological evaluation of tissue samples after incision with a 445-nm diode laser. Forty soft tissue specimens were obtained from pork oral mucosa and mounted on a motorized linear translation stage. The handpiece of a high-frequency surgery device, a 970-nm semiconductor laser, and a 445-nm semiconductor laser were connected to the slide, allowing a constant linear movement (2 mm/s) and the same distance of the working tip to the soft tissue's surface. Four incisions were made each: (I) 970-nm laser with conditioned fiber tip, contact mode at 3-W cw; (II-III): 445-nm laser with non-conditioned fiber tip, contact mode at 2-W cw, and non-contact mode (1 mm) at 2 W; and (IV): high-frequency surgery device with straight working tip, 90° angulation, contact mode at 50 W. Histological analysis was performed after H&E staining of the embedded specimens at 35-fold magnification. The comparison of the incision depths showed a significant difference depending on the laser wavelength and the selected laser parameters. The highest incision depth was achieved with the 445-nm laser contact mode (median depth 0.61 mm, min 0.26, max 1.17, interquartile range 0.58) (p < 0.05) with the lowest amount of soft tissue denaturation (p < 0.05). The lowest incision depth was measured for the high-frequency surgical device (median depth 0.36 mm, min 0.12, max 1.12, interquartile range 0.23) (p < 0.05). Using a 445-nm semiconductor laser, a higher cutting efficiency can be expected when compared with a 970-nm diode laser and high-frequency surgery. Even the 445-nm laser application in non-contact mode shows clinically acceptable incision depths without signs of extensive soft tissue denaturation.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

PubMed

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

PubMed Central

Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

2017-01-01

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

DOEpatents

Hohimer, John P.

1994-01-01

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

DOEpatents

Hohimer, J.P.

1994-06-07

A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure. 6 figs.

Theory of active mode locking of a semiconductor laser in an external cavity

NASA Technical Reports Server (NTRS)

Yeung, J. A.

1981-01-01

An analytical treatment is given for the active mode locking of a semiconductor laser in an external resonator. The width of the mode-locked pulses is obtained as a function of the laser and cavity parameters and the amount of frequency detuning. The effects of self-modulation and saturation are included in the treatment. The pulse output is compared with that obtained by a strong modulation of the laser diode with no external cavity.

Two-photon fluorescence bioimaging with an all-semiconductor laser picosecond pulse source.

PubMed

Kuramoto, Masaru; Kitajima, Nobuyoshi; Guo, Hengchang; Furushima, Yuji; Ikeda, Masao; Yokoyama, Hiroyuki

2007-09-15

We have demonstrated successful two-photon excitation fluorescence bioimaging using a high-power pulsed all-semiconductor laser. Toward this purpose, we developed a pulsed light source consisting of a mode-locked laser diode and a two-stage diode laser amplifier. This pulsed light source provided optical pulses of 5 ps duration and having a maximum peak power of over 100 W at a wavelength of 800 nm and a repetition frequency of 500 MHz.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

Electrically pumped edge-emitting photonic bandgap semiconductor laser

DOEpatents

Lin, Shawn-Yu; Zubrzycki, Walter J.

2004-01-06

A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

Self-injection-locking linewidth narrowing in a semiconductor laser coupled to an external fiber-optic ring resonator

NASA Astrophysics Data System (ADS)

Korobko, Dmitry A.; Zolotovskii, Igor O.; Panajotov, Krassimir; Spirin, Vasily V.; Fotiadi, Andrei A.

2017-12-01

We develop a theoretical framework for modeling of semiconductor laser coupled to an external fiber-optic ring resonator. The developed approach has shown good qualitative agreement between theoretical predictions and experimental results for particular configuration of a self-injection locked DFB laser delivering narrow-band radiation. The model is capable of describing the main features of the experimentally measured laser outputs such as laser line narrowing, spectral shape of generated radiation, mode-hoping instabilities and makes possible exploring the key physical mechanisms responsible for the laser operation stability.

Semiconductor laser-based optoelectronics oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-08-01

We demonstrate the realization of coupled opto-electronic oscillators (COEO) with different semiconductor lasers, including a ring laser, a Fabry-Perot laser, and a colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Thermo-optic locking of a semiconductor laser to a microcavity resonance.

PubMed

McRae, T G; Lee, Kwan H; McGovern, M; Gwyther, D; Bowen, W P

2009-11-23

We experimentally demonstrate thermo-optic locking of a semiconductor laser to an integrated toroidal optical microcavity. The lock is maintained for time periods exceeding twelve hours, without requiring any electronic control systems. Fast control is achieved by optical feedback induced by scattering centers within the microcavity, with thermal locking due to optical heating maintaining constructive interference between the cavity and the laser. Furthermore, the optical feedback acts to narrow the laser linewidth, with ultra high quality microtoroid resonances offering the potential for ultralow linewidth on-chip lasers.

Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

DOEpatents

Beach, Raymond J.; Benett, William J.; Mills, Steven T.

1997-01-01

The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

Optimum design on refrigeration system of high-repetition-frequency laser

NASA Astrophysics Data System (ADS)

Li, Gang; Li, Li; Jin, Yezhou; Sun, Xinhua; Mao, Shaojuan; Wang, Yuanbo

2014-12-01

A refrigeration system with fluid cycle, semiconductor cooler and air cooler is designed to solve the problems of thermal lensing effect and unstable output of high-repetition-frequency solid-state lasers. Utilizing a circulating water pump, water recycling system carries the water into laser cavity to absorb the heat then get to water cooling head. The water cooling head compacts cold spot of semiconductor cooling chips, so the heat is carried to hot spot which contacts the radiating fins, then is expelled through cooling fan. Finally, the cooled water return to tank. The above processes circulate to achieve the purposes of highly effective refrigeration in miniative solid-state lasers.The refrigeration and temperature control components are designed strictly to ensure refrigeration effect and practicability. we also set up a experiment to test the performances of this refrigeration system, the results show that the relationship between water temperature and cooling power of semiconductor cooling chip is linear at 20°C-30°C (operating temperature range of Nd:YAG), the higher of the water temperature, the higher of cooling power. According to the results, cooling power of single semiconductor cooling chip is above 60W, and the total cooling power of three semiconductor cooling chips achieves 200W that will satisfy the refrigeration require of the miniative solid-state lasers.The performance parameters of laser pulse are also tested, include pulse waveform, spectrogram and laser spot. All of that indicate that this refrigeration system can ensure the output of high-repetition-frequency pulse whit high power and stability.

Tailoring the negative-refractive-index metamaterials composed of semiconductor-metal-semiconductor gold ring/disk cavity heptamers to support strong Fano resonances in the visible spectrum.

PubMed

Ahmadivand, Arash; Pala, Nezih

2015-02-01

In this study, we investigated numerically the plasmon response of a planar negative-index metamaterial composed of symmetric molecular orientations of Au ring/disk nanocavities in a heptamer cluster. Using the plasmon hybridization theory and considering the optical response of an individual nanocluster, we determined the accurate geometrical sizes for a ring/disk nanocavity heptamer. It is shown that the proposed well-organized nanocluster can be tailored to support strong and sharp Fano resonances in the visible spectrum. Surrounding and filling the heptamer clusters by various metasurfaces with different chemical characteristics, and illuminating the structure with an incident light source, we proved that this configuration reflects low losses and isotropic features, including a pronounced Fano dip in the visible spectrum. Technically, employing numerical methods and tuning the geometrical sizes of the structure, we tuned and induced the Fano dip in the visible range, while the dark and bright plasmon resonance extremes are blueshifted to shorter wavelengths dramatically. Considering the calculated transmission window, we quantified the effective refractive index for the structure, while the substance of the substrate material was varied. Using Si, GaP, and InP semiconductors as substrate materials, we calculated and compared the corresponding figure of merit (FOM) for different regimes. The highest possible FOM was obtained for the GaP-Au-GaP negative-refractive-index metamaterial composed of ring/disk nanocavity heptamers as 62.4 at λ∼690  nm (arounnd the position of the Fano dip). Despite the outstanding symmetric nature of the suggested heptamer array, we provided sharp Fano dips by the appropriate tuning of the geometrical and chemical parameters. This study yields a method to employ ring/disk nanocavity heptamers as a negative-refractive-index metamaterial in designing highly accurate localization of surface plasmon resonance sensing devices and biochemical sensors.

Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

PubMed Central

2013-01-01

In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms’ redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones. PMID:23735193

Planning for optical disk technology with digital cartography.

USGS Publications Warehouse

Light, D.L.

1986-01-01

A major shortfall that still exists in digital systems is the need for very large mass storage capacity. The decade of the 1980s has introduced laser optical disk storage technology, which may be the breakthrough needed for mass storage. This paper addresses system concepts for digital cartography during the transition period. Emphasis will be placed on determining USGS mass storage requirements and introducing laser optical disk technology for handling storage problems for digital data in this decade.-from Author

Semiconductor Reference Oscillator Development for Coherent Detection Optical Remote Sensing Applications

NASA Technical Reports Server (NTRS)

Tratt, David M.; Mansour, Kamjou; Menzies, Robert T.; Qiu, Yueming; Forouhar, Siamak; Maker, Paul D.; Muller, Richard E.

2001-01-01

The NASA Earth Science Enterprise Advanced Technology Initiatives Program is supporting a program for the development of semiconductor laser reference oscillators for application to coherent optical remote sensing from Earth orbit. Local oscillators provide the frequency reference required for active spaceborne optical remote sensing concepts that involve heterodyne (coherent) detection. Two recent examples of such schemes are Doppler wind lidar and tropospheric carbon dioxide measurement by laser absorption spectrometry, both of which are being proposed at a wavelength of 2.05 microns. Frequency-agile local oscillator technology is important to such applications because of the need to compensate for large platform-induced Doppler components that would otherwise interfere with data interpretation. Development of frequency-agile local oscillator approaches has heretofore utilized the same laser material as the transmitter laser (Tm,Ho:YLF in the case of the 2.05-micron wavelength mentioned above). However, a semiconductor laser-based frequency-agile local oscillator offers considerable scope for reduced mechanical complexity and improved frequency agility over equivalent crystal laser devices, while their potentially faster tuning capability suggest the potential for greater scanning versatility. The program we report on here is specifically tasked with the development of prototype novel architecture semiconductor lasers with the power, tunability, and spectral characteristics required for coherent Doppler lidar. The baseline approach for this work is the distributed feedback (DFB) laser, in which gratings are etched into the semiconductor waveguide structures along the entire length of the laser cavity. However, typical DFB lasers at the wavelength of interest have linewidths that exhibit unacceptable growth when driven at the high currents and powers that are required for the Doppler lidar application. Suppression of this behavior by means of corrugation pitch-modulation (using a detuned central section to prevent intensity peaking in the center of the cavity) is currently under investigation to achieve the required performance goals.

Metal-optic and Plasmonic Semiconductor-based Nanolasers

DTIC Science & Technology

2012-05-07

provides a means to integrate laser sources for silicon photonics technology. Using wafer bonding techniques, the metal- clad nanocavity can be integrated...SUPPLEMENTARY NOTES 14. ABSTRACT Over the past few decades, semiconductor lasers have relentlessly followed the path towards miniaturization...Smaller lasers are more energy e cient, are cheaper to make, and open up new applications in sensing and displays, among many other things. Yet, up until

Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D A; Pikhtin, N A; Lyutetskiy, A V

2015-07-31

We report an experimental study of power characteristics of semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide as functions of cavity length, stripe contact width and mirror reflectivities. It is shown that at high current pump levels, the variation of the cavity parameters of a semiconductor laser (width, length and mirror reflectivities) influences the light – current (L – I) characteristic saturation and maximum optical power by affecting such laser characteristics, as the current density and the optical output loss. A model is elaborated and an optical power of semiconductor lasers is calculated by taking intomore » account the dependence of the internal optical loss on pump current density and concentration distribution of charge carriers and photons along the cavity axis of the cavity. It is found that only introduction of the dependence of the internal optical loss on pump current density to the calculation model provides a good agreement between experimental and calculated L – I characteristics for all scenarios of variations in the laser cavity parameters. (lasers)« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V

Synthesis of semiconductor nanomaterials by low-cost, solution-based methods is shown to lead to new classes of thin film light emitting materials. These materials have been integrated to demonstrative compact laser device testbeds to illustrate their potential for coherent emitters across the visible spectrum to disrupt established photonics technologies, particularly semiconductor lasers?

Toward continuous-wave operation of organic semiconductor lasers

PubMed Central

Sandanayaka, Atula S. D.; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-01-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi–continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture. PMID:28508042

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Toward continuous-wave operation of organic semiconductor lasers.

PubMed

Sandanayaka, Atula S D; Matsushima, Toshinori; Bencheikh, Fatima; Yoshida, Kou; Inoue, Munetomo; Fujihara, Takashi; Goushi, Kenichi; Ribierre, Jean-Charles; Adachi, Chihaya

2017-04-01

The demonstration of continuous-wave lasing from organic semiconductor films is highly desirable for practical applications in the areas of spectroscopy, data communication, and sensing, but it still remains a challenging objective. We report low-threshold surface-emitting organic distributed feedback lasers operating in the quasi-continuous-wave regime at 80 MHz as well as under long-pulse photoexcitation of 30 ms. This outstanding performance was achieved using an organic semiconductor thin film with high optical gain, high photoluminescence quantum yield, and no triplet absorption losses at the lasing wavelength combined with a mixed-order distributed feedback grating to achieve a low lasing threshold. A simple encapsulation technique greatly reduced the laser-induced thermal degradation and suppressed the ablation of the gain medium otherwise taking place under intense continuous-wave photoexcitation. Overall, this study provides evidence that the development of a continuous-wave organic semiconductor laser technology is possible via the engineering of the gain medium and the device architecture.

Observation of Eye Pattern on Super-Resolution Near-Field Structure Disk with Write-Strategy Technique

NASA Astrophysics Data System (ADS)

Fuji, Hiroshi; Kikukawa, Takashi; Tominaga, Junji

2004-07-01

Pit-edge recording at a density of 150 nm pits and spaces is carried out on a super-resolution near-field structure (super-RENS) disk with a platinum oxide layer. Pits are recorded and read using a 635-nm-wavelength laser and an objective lens with a 0.6 numerical aperture. We arrange laser pulses to correctly record the pits on the disk by a write-strategy technique. The laser-pulse figure includes a unit time of 0.25 T and intensities of Pw1, Pw2 and Pw3. After recording pits of various lengths, the observation of an eye pattern is achieved despite a pit smaller than the resolution limit. Furthermore, the eye pattern maintains its shape even though other pits fill the adjacent tracks at a track density of 600 nm. The disk can be used as a pit-edge recording system through a write-strategy technique.

Plasmonic colour generation

NASA Astrophysics Data System (ADS)

Kristensen, Anders; Yang, Joel K. W.; Bozhevolnyi, Sergey I.; Link, Stephan; Nordlander, Peter; Halas, Naomi J.; Mortensen, N. Asger

2017-01-01

Plasmonic colours are structural colours that emerge from resonant interactions between light and metallic nanostructures. The engineering of plasmonic colours is a promising, rapidly emerging research field that could have a large technological impact. We highlight basic properties of plasmonic colours and recent nanofabrication developments, comparing technology-performance indicators for traditional and nanophotonic colour technologies. The structures of interest include diffraction gratings, nanoaperture arrays, thin films, and multilayers and structures that support Mie resonances and whispering-gallery modes. We discuss plasmonic colour nanotechnology based on localized surface plasmon resonances, such as gap plasmons and hybridized disk-hole plasmons, which allow for colour printing with sub-diffraction resolution. We also address a range of fabrication approaches that enable large-area printing and nanoscale lithography compatible with complementary metal-oxide semiconductor technologies, including nanoimprint lithography and self-assembly. Finally, we review recent developments in dynamically reconfigurable plasmonic colours and in the laser-induced post-processing of plasmonic colour surfaces.

Accuracy of Petermann's K-factor in the theory of semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

El Mashade, M.B.; Arnaud, J.

1986-04-01

Petermann has proposed that the classical formula for the linewidth of a laser be multiplied by a factor K >> 1 in the case of gain-guided semiconductor lasers. The concept of power in the mode used by that author, however, is not well defined in a waveguide with gain, and his theory is therefore opened to question. The analysis given here avoids this difficulty and nevertheless agrees with Petermann's result. This is because spatial mode filtering is strong in oscillating lasers.

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Stable CW Single Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by tWo methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback'. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1998-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings (FBG) has been achieved by two methods: (1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element; (2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

PubMed

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Real Time Imaging Analysis Using a Terahertz Quantum Cascade Laser and a Microbolometer Focal Plane Array

DTIC Science & Technology

2008-12-01

evident from Figure 7 that, if the applied bias is not correct, it is very likely that electrons will not tunnel into their intended energy state...the theoretical laser contrasts sharply to that of semiconductor lasers. Semiconductor lasers rely on electron hole recombination or interband ...the active layer of a forward- biased pn junction [26]. In contrast to this, the QCL is a unipolar device that uses a quantum well (QW) structure

Experimental study on rat NK cell activity improvement by laser acupoint irradiation

NASA Astrophysics Data System (ADS)

Yang, Dongxiao; Chen, Xiufeng; Ruan, Buqing; Yang, Feng

1998-08-01

To study the improvement of the natural killer (NK) cell activity by semiconductor laser acupoint irradiation, rats were used in this experiment and were injected immunosuppressant in their abdomen. The immunoassay was made after the surface irradiation and inner irradiation at Baihui point by semiconductor laser. The NK cell activity is an important index of immunologic function. The results showed that the NK cell activity after laser acupoint irradiation was enhanced. This enhancement is relatively important in the clinical therapy of tumor.

Digital optical signal processing with polarization-bistable semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jai-Ming Liu,; Ying-Chin Chen,

1985-04-01

The operations of a complete set of optical AND, NAND, OR, and NOR gates and clocked optical S-R, D, J-K, and T flip-flops are demonstrated, based on direct polarization switching and polarization bistability, which we have recently observed in InGaAsP/InP semiconductor lasers. By operating the laser in the direct-polarizationswitchable mode, the output of the laser can be directly switched between the TM00 and TE00 modes with high extinction ratios by changing the injection-current level, and optical logic gates are constructed with two optoelectronic switches or photodetectors. In the polarization-bistable mode, the laser exhibits controllable hysteresis loops in the polarization-resolved powermore » versus current characteristics. When the laser is biased in the middle of the hysteresis loop, the light output can be switched between the two polarization states by injection of short electrical or optical pulses, and clocked optical flip-flops are constructed with a few optoelectronic switches and/or photodetectors. The 1 and 0 states of these devices are defined through polarization changes of the laser and direct complement functions are obtainable from the TE and TM output signals from the same laser. Switching of the polarization-bistable lasers with fast-rising current pulses has an instrument-limited mode-switching time on the order of 1 ns. With fast optoelectronic switches and/or fast photodetectors, the overall switching speed of the logic gates and flip-flops is limited by the polarizationbistable laser to <1 ns. We have demonstrated the operations of these devices using optical signals generated by semiconductor lasers. The proposed schemes of our devices are compatible with monolithic integration based on current fabrication technology and are applicable to other types of bistable semiconductor lasers.« less

Quantum weak turbulence with applications to semiconductor lasers

NASA Astrophysics Data System (ADS)

Lvov, Yuri Victorovich

Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two particle interaction potential equivalent to the static screening approximation. The resulting asymytotic closure and quantum kinetic Boltzmann equation are derived in a self consistent manner without resorting to a priori statistical hypotheses or cumulant discard assumptions. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy across momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We explore these solutions by using differential approximation to collision integral. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers. We show that semiconductor laser output efficiency can be improved by exciting these finite flux solutions. Numerical simulations of the semiconductor Maxwell Bloch equations support the claim.

Solid state laser disk amplifer architecture: the normal-incidence stack

DOEpatents

Dane, C. Brent; Albrecht, Georg F.; Rotter, Mark D.

2005-01-25

Normal incidence stack architecture coupled with the development of diode array pumping enables the power/energy per disk to be increased, a reduction in beam distortions by orders of magnitude, a beam propagation no longer restricted to only one direction of polarization, and the laser becomes so much more amendable to robust packaging.

Spontaneous emission in semiconductor laser amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arnaud, J.; Coste, F.; Fesqueet, J.

1985-06-01

In a mode matched configuration, spontaneous emission in semiconductor laser amplifiers is enhanced by a factor which is larger than unity but which is significantly smaller than the K-factor calculated by Petermann. Using thin-slab model, we find that in typical situations, the factor is about K/2.

Laser optical disk position encoder with active heads

NASA Technical Reports Server (NTRS)

Osborne, Eric P.

1991-01-01

An angular position encoder that minimizes the effects of eccentricity and other misalignments between the disk and the read stations by employing heads with beam steering optics that actively track the disk in directions along the disk radius and normal to its surface is discussed. The device adapts features prevalent in optical disk technology to the application of angular position sensing.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: High-frequency impedance and spontaneous carrier lifetime in narrow-stripe semiconductor injection lasers

NASA Astrophysics Data System (ADS)

Hoernlein, W.

1988-11-01

Measurements were made of the complex reflection coefficient of hf (10-400 MHz) signals from semiconductor injection lasers supplied with a direct bias current ranging from several milliamperes up to the threshold value or higher. The hf impedance was calculated. The parameters of the equivalent electrical circuit made it possible to predict the modulation characteristics. The impedance corresponding to currents below the lasing threshold was used to find the differential carrier lifetime from the RC constant of the p-n junction of a laser diode. A description of the apparatus is supplemented by an account of the method used in calculation of the electrical parameters and carrier lifetimes. The first results obtained using this apparatus and method are reported.

Beam collimation and focusing and error analysis of LD and fiber coupling system based on ZEMAX

NASA Astrophysics Data System (ADS)

Qiao, Lvlin; Zhou, Dejian; Xiao, Lei

2017-10-01

Laser diodde has many advantages, such as high efficiency, small volume, low cost and easy integration, so it is widely used. Because of its poor beam quality, the application of semiconductor laser has also been seriously hampered. In view of the poor beam quality, the ZEMAX optical design software is used to simulate the far field characteristics of the semiconductor laser beam, and the coupling module of the semiconductor laser and the optical fiber is designed and optimized. And the beam is coupled into the fiber core diameter d=200µm, the numerical aperture NA=0.22 optical fiber, the output power can reach 95%. Finally, the influence of the three docking errors on the coupling efficiency during the installation process is analyzed.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Dynamics of a multimode semiconductor laser with optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koryukin, I. V.

A new model of a multi-longitudinal-mode semiconductor laser with weak optical feedback is proposed. This model generalizes the well-known Tang-Statz-deMars equations, which are derived from the first principles and adequately describe solid-state lasers to a semiconductor active medium. Steady states of the model and the spectrum of relaxation oscillations are found, and the laser dynamics in the chaotic regime of low-frequency fluctuations of intensity is investigated. It is established that the dynamic properties of the proposed model depend mainly on the carrier diffusion, which controls mode-mode coupling in the active medium via spread of gratings of spatial inversion. The resultsmore » obtained are compared with the predictions of previous semiphenomenological models and the scope of applicability of these models is determined.« less

Semiconductor cylinder fiber laser

NASA Astrophysics Data System (ADS)

Sandupatla, Abhinay; Flattery, James; Kornreich, Philipp

2015-12-01

We fabricated a fiber laser that uses a thin semiconductor layer surrounding the glass core as the gain medium. This is a completely new type of laser. The In2Te3 semiconductor layer is about 15-nm thick. The fiber laser has a core diameter of 14.2 μm, an outside diameter of 126 μm, and it is 25-mm long. The laser mirrors consist of a thick vacuum-deposited aluminum layer at one end and a thin semitransparent aluminum layer deposited at the other end of the fiber. The laser is pumped from the side with either light from a halogen tungsten incandescent lamp or a blue light emitting diode flash light. Both the In2Te3 gain medium and the aluminum mirrors have a wide bandwidth. Therefore, the output spectrum consists of a pedestal from a wavelength of about 454 to 623 nm with several peaks. There is a main peak at 545 nm. The main peak has an amplitude of 16.5 dB above the noise level of -73 dB.

Fabrication of metal/semiconductor nanocomposites by selective laser nano-welding.

PubMed

Yu, Huiwu; Li, Xiangyou; Hao, Zhongqi; Xiong, Wei; Guo, Lianbo; Lu, Yongfeng; Yi, Rongxing; Li, Jiaming; Yang, Xinyan; Zeng, Xiaoyan

2017-06-01

A green and simple method to prepare metal/semiconductor nanocomposites by selective laser nano-welding metal and semiconductor nanoparticles was presented, in which the sizes, phases, and morphologies of the components can be maintained. Many types of nanocomposites (such as Ag/TiO 2 , Ag/SnO 2 , Ag/ZnO 2 , Pt/TiO 2 , Pt/SnO 2 , and Pt/ZnO) can be prepared by this method and their corresponding performances were enhanced.

Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

PubMed Central

2011-01-01

On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

Ultralow-jitter and -amplitude-noise semiconductor-based actively mode-locked laser.

PubMed

Quinlan, Franklyn; Gee, Sangyoun; Ozharar, Sarper; Delfyett, Peter J

2006-10-01

We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and a 0.0365% amplitude fluctuation (1 Hz to 100 MHz) of the optical pulse train. The keys to obtaining this result were the laser's high optical power and the low phase noise of the rf source used to mode lock the laser. The low phase noise of the rf source not only improves the absolute and relative timing jitter of the laser, but also prevents coupling of the rf source phase noise to the pulse amplitude fluctuations by the mode-locked laser.

Design of ultrahigh brightness solar-pumped disk laser.

PubMed

Liang, Dawei; Almeida, Joana

2012-09-10

To significantly improve the solar-pumped laser beam brightness, a multi-Fresnel lens scheme is proposed for side-pumping either a single-crystal Nd:YAG or a core-doped ceramic Sm(3+) Nd:YAG disk. Optimum laser system parameters are found through ZEMAX and LASCAD numerical analysis. An ultrahigh laser beam figure of merit B of 53 W is numerically calculated, corresponding to a significant enhancement of more than 180 times over the previous record. 17.7 W/m(2) collection efficiency is also numerically attained. The strong thermal effects that have hampered present-day rod-type solar-pumped lasers can also be largely alleviated.

New Methods of Sample Preparation for Atom Probe Specimens

NASA Technical Reports Server (NTRS)

Kuhlman, Kimberly, R.; Kowalczyk, Robert S.; Ward, Jennifer R.; Wishard, James L.; Martens, Richard L.; Kelly, Thomas F.

2003-01-01

Magnetite is a common conductive mineral found on Earth and Mars. Disk-shaped precipitates approximately 40 nm in diameter have been shown to have manganese and aluminum concentrations. Atom-probe field-ion microscopy (APFIM) is the only technique that can potentially quantify the composition of these precipitates. APFIM will be used to characterize geological and planetary materials, analyze samples of interest for geomicrobiology; and, for the metrology of nanoscale instrumentation. Prior to APFIM sample preparation was conducted by electropolishing, the method of sharp shards (MSS), or Bosch process (deep reactive ion etching) with focused ion beam (FIB) milling as a final step. However, new methods are required for difficult samples. Many materials are not easily fabricated using electropolishing, MSS, or the Bosch process, FIB milling is slow and expensive, and wet chemistry and the reactive ion etching are typically limited to Si and other semiconductors. APFIM sample preparation using the dicing saw is commonly used to section semiconductor wafers into individual devices following manufacture. The dicing saw is a time-effective method for preparing high aspect ratio posts of poorly conducting materials. Femtosecond laser micromachining is also suitable for preparation of posts. FIB time required is reduced by about a factor of 10 and multi-tip specimens can easily be fabricated using the dicing saw.

Wurtzite Spin-Lasers

NASA Astrophysics Data System (ADS)

Xu, Gaofeng; Faria Junior, Paulo E.; Sipahi, Guilherme M.; Zutic, Igor

Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. While theoretical studies of such spin-lasers have focused on zinc-blende semiconductors as their active regions, the first electrically injected carriers at room temperature were recently demonstrated in GaN-based wurtzite semiconductors, recognized also for the key role as highly-efficient light emitting diodes. By focusing on a wurtzite quantum well-based spin-laser, we use accurate electronic structure calculations to develop a microscopic description for its lasing properties. We discuss important differences between wurtzite and zinc-blende spin-lasers.

Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

DOEpatents

Beach, R.J.; Benett, W.J.; Mills, S.T.

1997-04-01

The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

Optical Disks.

ERIC Educational Resources Information Center

Gale, John C.; And Others

1985-01-01

This four-article section focuses on information storage capacity of the optical disk covering the information workstation (uses microcomputer, optical disk, compact disc to provide reference information, information content, work product support); use of laser videodisc technology for dissemination of agricultural information; encoding databases…

High temperature heat source generation with quasi-continuous wave semiconductor lasers at power levels of 6 W for medical use.

PubMed

Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Ito, Shinobu; Kanazawa, Hideko; Yamaguchi, Shigeru

2014-01-01

We investigate a technology to create a high temperature heat source on the tip surface of the glass fiber proposed for medical surgery applications. Using 4 to 6 W power level semiconductor lasers at a wavelength of 980 nm, a laser coupled fiber tip was preprocessed to contain a certain amount of titanium oxide powder with a depth of 100 μm from the tip surface so that the irradiated low laser energy could be perfectly absorbed to be transferred to thermal energy. Thus, the laser treatment can be performed without suffering from any optical characteristic of the material. A semiconductor laser was operated quasi-continuous wave mode pulse time duration of 180 ms and >95% of the laser energy was converted to thermal energy in the fiber tip. Based on two-color thermometry, by using a gated optical multichannel analyzer with a 0.25 m spectrometer in visible wavelength region, the temperature of the fiber tip was analyzed. The temperature of the heat source was measured to be in excess 3100 K.

Nonlinear THz Plamonic Disk Resonators

NASA Astrophysics Data System (ADS)

Seren, Huseyin; Zhang, Jingdi; Keiser, George; Maddox, Scott; Fan, Kebin; Cao, Lingyue; Bank, Seth; Zhang, Xin; Averitt, Richard

2013-03-01

Particle surface plasmons (PPSs) at visible wavelengths continue to be actively investigated with the goal of nanoscale control of light. In contrast, terahertz (THz) surface plasmon experiments are at a nascent stage of investigation. Doped semiconductors with proper carrier density and mobility support THz PSPs. One approach is to utilize thick doped films etched into subwavelength disks. Given the ease of tuning the semiconductor carrier density, THz PSPs are tunable and exhibit interesting nonlinear THz plasmonic effects. We created THz PSP structures using MBE grown 2um thick InAs films with a doping concentration of 1e17cm-3 on 500um thick semi-insulating GaAs substrate. We patterned 40um diameter disks with a 60um period by reactive ion etching. Our THz time-domain measurements reveal a resonance at 1.1THz which agrees well with simulation results using a Drude model. A nonlinear response occurs at high THz electric field strengths (>50kV/cm). In particular, we observed a redshift and quenching of the resonance due to impact ionization which resulted in changes in the carrier density and effective mass due to inter-valley scattering.

Lubricant depletion under various laser heating conditions in Heat Assisted Magnetic Recording (HAMR)

NASA Astrophysics Data System (ADS)

Xiong, Shaomin; Wu, Haoyu; Bogy, David

2014-09-01

Heat assisted magnetic recording (HAMR) is expected to increase the storage areal density to more than 1 Tb/in2 in hard disk drives (HDDs). In this technology, a laser is used to heat the magnetic media to the Curie point (~400-600 °C) during the writing process. The lubricant on the top of a magnetic disk could evaporate and be depleted under the laser heating. The change of the lubricant can lead to instability of the flying slider and failure of the head-disk interface (HDI). In this study, a HAMR test stage is developed to study the lubricant thermal behavior. Various heating conditions are controlled for the study of the lubricant thermal depletion. The effects of laser heating repetitions and power levels on the lubricant depletion are investigated experimentally. The lubricant reflow behavior is discussed as well.

Plasma Heating and Ultrafast Semiconductor Laser Modulation Through a Terahertz Heating Field

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Ning, C. Z.

2000-01-01

Electron-hole plasma heating and ultrafast modulation in a semiconductor laser under a terahertz electrical field are investigated using a set of hydrodynamic equations derived from the semiconductor Bloch equations. The self-consistent treatment of lasing and heating processes leads to the prediction of a strong saturation and degradation of modulation depth even at moderate terahertz field intensity. This saturation places a severe limit to bandwidth achievable with such scheme in ultrafast modulation. Strategies for increasing modulation depth are discussed.

IV INTERNATIONAL CONFERENCE ON ATOM AND MOLECULAR PULSED LASERS (AMPL'99): Efficient long-pulse XeCl laser with a prepulse formed by an inductive energy storage device

NASA Astrophysics Data System (ADS)

Baksht, E. Kh; Panchenko, Aleksei N.; Tarasenko, Viktor F.

2000-06-01

An efficient electric-discharge XeCl laser is developed, which is pumped by a self-sustained discharge with a prepulse formed by a generator with an inductive energy storage device and a semiconductor current interrupter on a basis of semiconductor opening switch (SOS) diodes. An output energy up to 800 mJ, a pulse length up to 450 ns, and a total laser efficiency of 2.2% were attained by using spark UV preionisation.

Saturable nonlinear dielectric waveguide with applications to broad-area semiconductor lasers.

PubMed

Mehuys, D; Mittelstein, M; Salzman, J; Yariv, A

1987-11-01

Self-focusing in a passive dielectric waveguide with a saturable nonlinearity is studied. The eigensolutions constitute a good approximation to the lateral modes of broad-area semiconductor lasers under low-duty-cycle pulsed conditions. The laser modes are predicted to consist of adjacent filaments coupled in phase, leading to a single-lobed far field, and to be stable with increased current injection above saturation intensity. The ultimate filament spacing is inversely proportional to the threshold gain, and thus wider filaments are expected in low-threshold broad-area lasers.

Widely tunable semiconductor lasers with three interferometric arms.

PubMed

Su, Guan-Lin; Wu, Ming C

2017-09-04

We present a comprehensive study for a new three-branch widely tunable semiconductor laser based on a self-imaging, lossless multi-mode interference (MMI) coupler. We have developed a general theoretical framework that is applicable to all types of interferometric lasers. Our analysis showed that the three-branch laser offers high side-mode suppression ratios (SMSRs) while maintaining a wide tuning range and a low threshold modal gain of the lasing mode. We also present the design rules for tuning over the dense-wavelength division multiplexing grid over the C-band.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.

PubMed

Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin

2015-11-03

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

PubMed Central

Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

2015-01-01

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

Semiconductor lasers vs LEDs in diagnostic and therapeutic medicine

NASA Astrophysics Data System (ADS)

Gryko, Lukasz; Zajac, Andrzej; Szymanska, Justyna; Blaszczak, Urszula; Palkowska, Anna; Kulesza, Ewa

2016-12-01

Semiconductor emitters are used in many areas of medicine, allowing for new methods of diagnosis, treatment and effective prevention of many diseases. The article presents selected areas of application of semiconductor sources in UVVIS- NIR range, where in recent years competition in semiconductor lasers and LEDs applications has been observed. Examples of applications of analyzed sources are indicated for LLLT, PDT and optical diagnostics using the procedure of color contrast. Selected results of LLLT research of the authors are presented that were obtained by means of the developed optoelectronic system for objectified irradiation and studies on the impact of low-energy laser and LED on lines of endothelial cells of umbilical vein. Usefulness of the spectrally tunable LED lighting system for diagnostic purposes is also demonstrated, also as an illuminator for surface applications - in procedure of variable color contrast of the illuminated object.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Kevin L.

The purpose of this LDRD project was to demonstrate high spatial and temporal resolution x-ray imaging using optical detectors, and in particular the VISAR and OHRV diagnostics on the OMEGA laser. The x-ray source being imaged was a backlighter capsule being imploded by 39 beams of the OMEGA laser. In particular this approach utilized a semiconductor with the side facing the backlighter capsule coated with a thin aluminum layer to allow x rays to pass through the metal layer and then get absorbed in the semiconductor. The other side of the semiconductor was AR coated to allow the VISAR ormore » OHRV probe beam to sample the phase change of the semiconductor as the x rays were absorbed in the semiconductor. This technique is capable of acquiring sub-picosecond 2-D or 1-D x-ray images, detector spatial resolution of better than 10 um and the ability to operate in a high neutron flux environment expected on ignition shots with burning plasmas. In addition to demonstrating this technique on the OMEGA laser, several designs were made to improve the phase sensitivity, temporal resolution and number of frames over the existing diagnostics currently implemented on the OMEGA laser. These designs included both 2-d imaging diagnostics as well as improved 1-D imaging diagnostics which were streaked in time.« less

Bibliography of Soviet Laser Developments, Number 40, March - April 1979.

DTIC Science & Technology

1979-11-27

6. Semiconductor: Heterojunction 7. Semiconductor: Theory ......................... 3 8. Glass : Nd ..................................... 4...9. Glass : Miscellaneous...........................4 B. Liquid Lasers 1. Organic Dyes a. Rhodamine .................................. 5 b...1979, 603-604. 8. Glass : Nd 22. Gvatua, Sh.Sh., E.V. Katselashvili, V.A. Khanevichev, D.K. Khotelashvili, and V.S. Chagulov (39). Substructure of high

An optical disk archive for a data base management system

NASA Technical Reports Server (NTRS)

Thomas, Douglas T.

1985-01-01

An overview is given of a data base management system that can catalog and archive data at rates up to 50M bits/sec. Emphasis is on the laser disk system that is used for the archive. All key components in the system (3 Vax 11/780s, a SEL 32/2750, a high speed communication interface, and the optical disk) are interfaced to a 100M bits/sec 16-port fiber optic bus to achieve the high data rates. The basic data unit is an autonomous data packet. Each packet contains a primary and secondary header and can be up to a million bits in length. The data packets are recorded on the optical disk at the same time the packet headers are being used by the relational data base management software ORACLE to create a directory independent of the packet recording process. The user then interfaces to the VAX that contains the directory for a quick-look scan or retrieval of the packet(s). The total system functions are distributed between the VAX and the SEL. The optical disk unit records the data with an argon laser at 100M bits/sec from its buffer, which is interfaced to the fiber optic bus. The same laser is used in the read cycle by reducing the laser power. Additional information is given in the form of outlines, charts, and diagrams.

Rare resource supply crisis and solution technology for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

2016-03-01

There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

Laser warning receiver to identify the wavelength and angle of arrival of incident laser light

DOEpatents

Sinclair; Michael B.; Sweatt, William C.

2010-03-23

A laser warning receiver is disclosed which has up to hundreds of individual optical channels each optically oriented to receive laser light from a different angle of arrival. Each optical channel has an optical wedge to define the angle of arrival, and a lens to focus the laser light onto a multi-wavelength photodetector for that channel. Each multi-wavelength photodetector has a number of semiconductor layers which are located in a multi-dielectric stack that concentrates the laser light into one of the semiconductor layers according to wavelength. An electrical signal from the multi-wavelength photodetector can be processed to determine both the angle of arrival and the wavelength of the laser light.

Inspection of imprint lithography patterns for semiconductor and patterned media

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

Semiconductor laser irradiation improves root canal sealing during routine root canal therapy

PubMed Central

Hu, Xingxue; Wang, Dashan; Cui, Ting; Yao, Ruyong

2017-01-01

Objective To evaluate the effect of semiconductor laser irradiation on root canal sealing after routine root canal therapy (RCT). Methods Sixty freshly extracted single-rooted human teeth were randomly divided into six groups (n = 10). The anatomic crowns were sectioned at the cementoenamel junction and the remaining roots were prepared endodontically with conventional RCT methods. Groups A and B were irradiated with semiconductor laser at 1W for 20 seconds; Groups C and D were ultrasonically rinsed for 60 seconds as positive control groups; Groups E and F without treatment of root canal prior to RCT as negative control groups. Root canal sealing of Groups A, C and E were evaluated by measurements of apical microleakage. The teeth from Groups B, D and F were sectioned, and the micro-structures were examined with scanning electron microscopy (SEM). One way ANOVA and LSD-t test were used for statistical analysis (α = .05). Results The apical sealing of both the laser irradiated group and the ultrasonic irrigated group were significantly different from the control group (p<0.5). There was no significant difference between the laser irradiated group and the ultrasonic irrigated group (p>0.5). SEM observation showed that most of the dentinal tubules in the laser irradiation group melted, narrowed or closed, while most of the dentinal tubules in the ultrasonic irrigation group were filled with tooth paste. Conclusion The application of semiconductor laser prior to root canal obturation increases the apical sealing of the roots treated. PMID:28957407

Dispersion of TE modes in slab waveguides with reference to double heterostructure semiconductor lasers

NASA Astrophysics Data System (ADS)

Buus, J.

1980-06-01

The group index for TE modes in an asymmetrical slab waveguide is investigated, and a simple analytical expression is derived. It is shown that the product of the phase and group indices is related to the power fraction in each of the three layers of the waveguide. The results are of interest in the analysis of double heterostructure semiconductor lasers. Theoretical and experimental results for lasers emitting at 1.55 microns are compared.

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

NASA Astrophysics Data System (ADS)

Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

2017-02-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers.

PubMed

Chen, Shaoqiang; Diao, Shengxi; Li, Pengtao; Nakamura, Takahiro; Yoshita, Masahiro; Weng, Guoen; Hu, Xiaobo; Shi, Yanling; Liu, Yiqing; Akiyama, Hidefumi

2017-07-31

High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8-1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.

Delay induced high order locking effects in semiconductor lasers

NASA Astrophysics Data System (ADS)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Delay induced high order locking effects in semiconductor lasers.

PubMed

Kelleher, B; Wishon, M J; Locquet, A; Goulding, D; Tykalewicz, B; Huyet, G; Viktorov, E A

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types--a quantum dot based device and a quantum well based device-are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Reliability of Semiconductor Laser Packaging in Space Applications

NASA Technical Reports Server (NTRS)

Gontijo, Ivair; Qiu, Yueming; Shapiro, Andrew A.

2008-01-01

A typical set up used to perform lifetime tests of packaged, fiber pigtailed semiconductor lasers is described, as well as tests performed on a set of four pump lasers. It was found that two lasers failed after 3200, and 6100 hours under device specified bias conditions at elevated temperatures. Failure analysis of the lasers indicates imperfections and carbon contamination of the laser metallization, possibly from improperly cleaned photo resist. SEM imaging of the front facet of one of the lasers, although of poor quality due to the optical fiber charging effects, shows evidence of catastrophic damage at the facet. More stringent manufacturing controls with 100% visual inspection of laser chips are needed to prevent imperfect lasers from proceeding to packaging and ending up in space applications, where failure can result in the loss of a space flight mission.

Review on the dynamics of semiconductor nanowire lasers

NASA Astrophysics Data System (ADS)

Röder, Robert; Ronning, Carsten

2018-03-01

Semiconductor optoelectronic devices have contributed tremendously to the technological progress in the past 50-60 years. Today, they also play a key role in nanophotonics stimulated by the inherent limitations of electronic integrated circuits and the growing demand for faster communications on chip. In particular, the field of ‘nanowire photonics’ has emerged including the search for coherent light sources with a nano-scaled footprint. The past decade has been dedicated to find suitable semiconductor nanowire (NW) materials for such nanolasers. Nowadays, such NW lasers consistently work at room temperature covering a huge spectral range from the ultraviolet down to the mid-infrared depending on the band gap of the NW material. Furthermore, first approaches towards the modification and optimization of such NW laser devices have been demonstrated. The underlying dynamics of the electronic and photonic NW systems have also been studied very recently, as they need to be understood in order to push the technological relevance of nano-scaled coherent light sources. Therefore, this review will first present novel measurement approaches in order to study the ultrafast temporal and optical mode dynamics of individual NW laser devices. Furthermore, these fundamental new insights are reviewed and deeply discussed towards the efficient control and adjustment of the dynamics in semiconductor NW lasers.

Selected Conference Proceedings from the 1985 Videodisc, Optical Disk, and CD-ROM Conference and Exposition (Philadelphia, PA, December 10-12, 1985).

ERIC Educational Resources Information Center

Cerva, John R.; And Others

1986-01-01

Eight papers cover: optical storage technology; cross-cultural videodisc design; optical disk technology use at the Library of Congress Research Service and National Library of Medicine; Internal Revenue Service image storage and retrieval system; solving business problems with CD-ROM; a laser disk operating system; and an optical disk for…

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Quantum weak turbulence with applications to semiconductor lasers

NASA Astrophysics Data System (ADS)

Lvov, Y. V.; Binder, R.; Newell, A. C.

1998-10-01

Based on a model Hamiltonian appropriate for the description of fermionic systems such as semiconductor lasers, we describe a natural asymptotic closure of the BBGKY hierarchy in complete analogy with that derived for classical weak turbulence. The main features of the interaction Hamiltonian are the inclusion of full Fermi statistics containing Pauli blocking and a simple, phenomenological, uniformly weak two-particle interaction potential equivalent to the static screening approximation. We find a new class of solutions to the quantum kinetic equation which are analogous to the Kolmogorov spectra of hydrodynamics and classical weak turbulence. They involve finite fluxes of particles and energy in momentum space and are particularly relevant for describing the behavior of systems containing sources and sinks. We make a prima facie case that these finite flux solutions can be important in the context of semiconductor lasers and show how they might be used to enhance laser performance.

Near-field phase-change recording using a GaN laser diode

NASA Astrophysics Data System (ADS)

Kishima, Koichiro; Ichimura, Isao; Yamamoto, Kenji; Osato, Kiyoshi; Kuroda, Yuji; Iida, Atsushi; Saito, Kimihiro

2000-09-01

We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens, and optimized a phase-change disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Strong light illumination on gain-switched semiconductor lasers helps the eavesdropper in practical quantum key distribution systems

NASA Astrophysics Data System (ADS)

Fei, Yang-yang; Meng, Xiang-dong; Gao, Ming; Yang, Yi; Wang, Hong; Ma, Zhi

2018-07-01

The temperature of the semiconductor diode increases under strong light illumination whether thermoelectric cooler is installed or not, which changes the output wavelength of the laser (Lee et al., 2017). However, other characteristics also vary as temperature increases. These variations may help the eavesdropper in practical quantum key distribution systems. We study the effects of temperature increase on gain-switched semiconductor lasers by simulating temperature dependent rate equations. The results show that temperature increase may cause large intensity fluctuation, decrease the output intensity and lead the signal state and decoy state distinguishable. We also propose a modified photon number splitting attack by exploiting the effects of temperature increase. Countermeasures are also proposed.

Broader, flatter optical spectra of passively mode-locked semiconductor lasers for a wavelength-division multiplexing source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliyahu, Danny; Yariv, Amnon

1997-05-01

Using the time domain master equation for a complex electric-field pulse envelope, we find analytical results for the optical spectra of passively mode-locked semiconductor lasers. The analysis includes the effect of optical nonlinearity of semiconductor lasers, which is characterized by a slow saturable amplifier and absorber. Group velocity dispersion, bandwidth limiting, and self-phase modulation were considered as well. The FWHM of the spectrum profile was found to have a strong dependence on group velocity dispersion and self-phase modulation. For large absolute values of the chirp parameter, the optical spectra result in equispaced continuous wave frequencies, a large fraction of whichmore » have equal power. {copyright} 1997 Optical Society of America« less

Semiconductor Microcavity Flow Spectroscopy of Intracellular Protein in Human Cells

NASA Astrophysics Data System (ADS)

Gourley, Paul; Cox, Jim; Hendricks, Judy; McDonald, Anthony; Copeland, Guild; Sasaki, Darryl; Skirboll, Steve; Curry, Mark

2001-03-01

The speed of light through a biofluid or biological cell is inversely related to the biomolecular concentration of proteins and other complex molecules that modify the refractive index at wavelengths accessible to semiconductor lasers. By placing a fluid or cell into a semiconductor microcavity laser, these decreases in light speed can be sensitively recorded in picoseconds as frequency red-shifts in the laser output spectrum. This biocavity laser equipped with microfluidics for transporting cells at high speed through the laser microcavity has shown potential for rapid analysis of biomolecular mass of normal and malignant human cells in their physiologic condition without time-consuming fixing, staining, or tagging. We have used biocavity laser spectroscopy to measure the optical properties of solutions of standard biomolecules (sugars, proteins, DNA, and ions) and human cells. The technique determines the frequency shift, relative to that of water, of spontaneous or stimulated emission from cavity filled with a biomolecular solution. The shift was also measured in human glioblastoma cells that had been sorted by conventional fluorescence-activated cell sorting according to protein content. The results show a direct correlation between protein measured by fluorescence and the frequency shift observed in the microcavity laser.

Quantum cascade lasers (QCL) for active hyperspectral imaging

NASA Astrophysics Data System (ADS)

Yang, Quankui; Fuchs, Frank; Wagner, Joachim

2014-04-01

There is an increasing demand for wavelength agile laser sources covering the mid-infrared (MIR, 3.5-12 µm) wavelength range, among others in active imaging. The MIR range comprises a particularly interesting part of the electromagnetic spectrum for active hyperspectral imaging applications, due to the fact that the characteristic `fingerprint' absorption spectra of many chemical compounds lie in that range. Conventional semiconductor diode laser technology runs out of steam at such long wavelengths. For many applications, MIR coherent light sources based on solid state lasers in combination with optical parametric oscillators are too complex and thus bulky and expensive. In contrast, quantum cascade lasers (QCLs) constitute a class of very compact and robust semiconductor-based lasers, which are able to cover the mentioned wavelength range using the same semiconductor material system. In this tutorial, a brief review will be given on the state-of-the-art of QCL technology. Special emphasis will be addressed on QCL variants with well-defined spectral properties and spectral tunability. As an example for the use of wavelength agile QCL for active hyperspectral imaging, stand-off detection of explosives based on imaging backscattering laser spectroscopy will be discussed.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric [Concord, MA; Shen, Mengyan [Arlington, MA

2008-10-28

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric; Shen, Mengyan

2015-09-15

The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric , Shen; Mengyan, [Belmont, MA

2011-02-08

The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Copper vapour laser with an efficient semiconductor pump generator having comparable pump pulse and output pulse durations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yurkin, A A

2016-03-31

We report the results of experimental studies of a copper vapour laser with a semiconductor pump generator capable of forming virtually optimal pump pulses with a current rise steepness of about 40 A ns{sup -1} in a KULON LT-1.5CU active element. To maintain the operating temperature of the active element's channel, an additional heating pulsed oscillator is used. High efficiency of the pump generator is demonstrated. (lasers)

Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zakharyash, Valerii F; Kashirsky, Aleksandr V; Klementyev, Vasilii M

2005-09-30

Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width ({approx}3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is {approx}3.7 THz. (control of laser radiation parameters)

Intracavity dispersion effect on timing jitter of ultralow noise mode-locked semiconductor based external-cavity laser.

PubMed

Gee, S; Ozharar, S; Plant, J J; Juodawlkis, P W; Delfyett, P J

2009-02-01

We report the generation of optical pulse trains with 380 as of residual timing jitter (1 Hz-1 MHz) from a mode-locked external-cavity semiconductor laser, through a combination of optimizing the intracavity dispersion and utilizing a high-power, low-noise InGaAsP quantum-well slab-coupled optical waveguide amplifier gain medium. This is, to our knowledge, the lowest residual timing jitter reported to date from an actively mode-locked laser.

The intravascular low level laser irradiation (ILLLI) in treatment of psoriasis clinically

NASA Astrophysics Data System (ADS)

Zhu, Jing; Nie, Fan; Shi, Hong-Min

2005-07-01

Objective: The title is research curative effect of intravascular low level laser irradiation (ILLLI) in treatment of psoriasis. Method: 478 patients with psoriasis from five groups to observe their efficacy. Group1 were treated by He-Ne laser combined with drug. Group 2 were treated by semi-conductor laser combined with drug. Group 3 were treated only by He-He laser. Group 4 were treated by semi-conductor laser. Group 5 were treated only by drug. The Ridit statistical analysis was applied to all of these data. The treatment of intravascular low level laser irradiation is as follow: laser power:4-5mw, 1 hour per day and 10 days as a period combined with vit C 2.0 g iv and inhalation of O2. Results: The clinical results: the near efficient rate was 100%, in group1-4, if combined with drugs it would be better. Ridit statistical analysis showed no significant difference between group1-4, p>0.05. The efficient rate 72.97% in group5.There were showed very significant difference with group1-4, p<0.01. 2.There were no significant differences between He-Ne laser (632.8nm) and semiconductor laser(650nm); 3.The efficacy of ILLLI in psoriasis was positive correlation to the ILLLI times. Conclusions: It can improve curative effect of intravascular low levellaser irradiation (ILLLI) in treatment of psoriasis.

Laser damage mechanisms in conductive widegap semiconductor films

DOE PAGES

Yoo, Jae-Hyuck; Menor, Marlon G.; Adams, John J.; ...

2016-07-25

Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN,more » carbon complexes were proposed as potential damage precursors or markers.« less

Application of laser spot cutting on spring contact probe for semiconductor package inspection

NASA Astrophysics Data System (ADS)

Lee, Dongkyoung; Cho, Jungdon; Kim, Chan Ho; Lee, Seung Hwan

2017-12-01

A packaged semiconductor has to be electrically tested to make sure they are free of any manufacturing defects. The test interface, typically employed between a Printed Circuit Board and the semiconductor devices, consists of densely populated Spring Contact Probe (SCP). A standard SCP typically consists of a plunger, a barrel, and an internal spring. Among these components, plungers are manufactured by a stamping process. After stamping, plunger connecting arms need to be cut into pieces. Currently, mechanical cutting has been used. However, it may damage to the body of plungers due to the mechanical force engaged at the cutting point. Therefore, laser spot cutting is considered to solve this problem. The plunger arm is in the shape of a rectangular beam, 50 μm (H) × 90 μm (W). The plunger material used for this research is gold coated beryllium copper. Laser parameters, such as power and elapsed time, have been selected to study laser spot cutting. Laser material interaction characteristics such as a crater size, material removal zone, ablation depth, ablation threshold, and full penetration are observed. Furthermore, a carefully chosen laser parameter (Etotal = 1000mJ) to test feasibility of laser spot cutting are applied. The result show that laser spot cutting can be applied to cut SCP.

The effect of ILLLI on peripheral blood SOD, MDA in psoriasis treatment

NASA Astrophysics Data System (ADS)

Zhu, Jing; Nie, Fan

2005-07-01

Objective: To research the effect of Intravascular low level laser irradiation (ILLLI) on the SOD,MDA in the treatment of psoriasis. Method :47 patients suffering from psoriasis from five groups were treated by Intravascular low level laser irradiation (power:4-5mw,1h per day, period of treatment: 10 days) .We checked the change of SOD,MDA peripheral blood in 10 normal people between pre and post treatment. Group A were treated by He-Ne laser combined with drug, group B were treated by semi-conductor laser combined with drug, group C were treated only by He-Ne laser, group D were treated only by semiconductor laser, group E were treated only by drug . Results: The levels of SOD in red cell of psoriatic patients from five groups after treatment were significantly lower than that of controlled group. The levels of SOD of them were significantly increased and nearly closed to that of controlled group; the levels of MDA in red cell of psoriatic patients from five groups after treatment were significantly higher than that of controlled group; the levels of MDA of them are decreased ,however, they were still not recovered to normal levels. Conclusions: ILLLI, both He-Ne laser and semiconductor laser, can activate SOD in psoriasis patients and enhance their ability of anti-oxidation.

Group III-arsenide-nitride long wavelength laser diodes

NASA Astrophysics Data System (ADS)

Coldren, Christopher W.

Semiconductor laser diodes transmitting data over silica optical fiber form the backbone of modern day communications systems, enabling terabit per second data transmission over hundreds to thousands of kilometers of distance. The wavelength of emission of the transmission semiconductor laser diode is a critical parameter that determines the performance of the communications system. In high performance fiber optic communications systems, lasers emitting at 1300nm and 1550nm are used because of the low loss and distortion properties of the fiber in these spectral windows. The available lasers today that operate in these fiber optic transmission windows suffer from high cost and poor performance under the typical environmental conditions and require costly and unreliable cooling systems. This dissertation presents work that demonstrates that it is possible to make lasers devices with 1300nm laser emission that are compatible with low cost and operation under extreme operating conditions. The key enabling technology developed is a novel semiconductor material based structure. A group III-Arsenide-Nitride quantum well structure was developed that can be grown expitaxially on GaAs substrates. The properties of this group III-Arsenide-Nitride structure allowed high performance edge emitting and vertical cavity surface emitting lasers to be fabricated which exhibited low threshold currents and low sensitivity to operating temperature.

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

NASA Astrophysics Data System (ADS)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

Optical double-locked semiconductor lasers

NASA Astrophysics Data System (ADS)

AlMulla, Mohammad

2018-06-01

Self-sustained period-one (P1) nonlinear dynamics of a semiconductor laser are investigated when both optical injection and modulation are applied for stable microwave frequency generation. Locking the P1 oscillation through modulation on the bias current, injection strength, or detuning frequency stabilizes the P1 oscillation. Through the phase noise variance, the different modulation types are compared. It is demonstrated that locking the P1 oscillation through optical modulation on the output of the master laser outperforms bias-current modulation of the slave laser. Master laser modulation shows wider P1-oscillation locking range and lower phase noise variance. The locking characteristics of the P1 oscillation also depend on the operating conditions of the optical injection system

Critical side channel effects in random bit generation with multiple semiconductor lasers in a polarization-based quantum key distribution system.

PubMed

Ko, Heasin; Choi, Byung-Seok; Choe, Joong-Seon; Kim, Kap-Joong; Kim, Jong-Hoi; Youn, Chun Ju

2017-08-21

Most polarization-based BB84 quantum key distribution (QKD) systems utilize multiple lasers to generate one of four polarization quantum states randomly. However, random bit generation with multiple lasers can potentially open critical side channels that significantly endangers the security of QKD systems. In this paper, we show unnoticed side channels of temporal disparity and intensity fluctuation, which possibly exist in the operation of multiple semiconductor laser diodes. Experimental results show that the side channels can enormously degrade security performance of QKD systems. An important system issue for the improvement of quantum bit error rate (QBER) related with laser driving condition is further addressed with experimental results.

An in vitro evaluation of the responses of human osteoblast-like SaOs-2 cells on SLA titanium surfaces irradiated by different powers of CO2 lasers.

PubMed

Ayubianmarkazi, Nader; Karimi, Mohammadreza; Koohkan, Shima; Sanasa, Armand; Foroutan, Tahereh

2015-11-01

Bacterial biofilms have been identified as the primary etiological factor for the development and progression of peri-implantitis. Lasers have been shown to remove bacterial plaque from titanium surfaces effectively and can restore its biocompatibility without damaging these surfaces. Therefore, the aim of this study was to evaluate the responses (i.e., the cell viability and morphology) of human osteoblast-like SaOs-2 cells to sandblasted, large grit, and acid-etched (SLA) titanium surfaces irradiated by CO2 lasers at two different power outputs. A total of 24 SLA disks were randomly radiated by CO2 lasers at either 6 W (group 1, 12 disks) or 8 W (group 2, 12 disks). Non-irradiated disks were used as a control group (four disks). The cell viability rates of the SaOs-2 cells in the control and study groups (6 and 8 W) were 0.33 ± 0.00, 0.24 ± 0.11, and 0.2372 ± 0.09, respectively (P < 0.6). Cells with cytoplasmic extensions and spreading morphology were most prominent in the control group (141.00 ± 29.00), while in the study groups (6 and 8 W), the number of cells with such morphology was 60.40 ± 26.00 and 35.20 ± 5.40, respectively (P < 0.005). Within the limits of this study, it may be concluded that the use of CO2 lasers with the aforementioned setting parameters could not be recommended for decontamination of SLA titanium surfaces.

Kilowatt-level direct-'refractive index matching liquid'-cooled Nd:YLF thin disk laser resonator.

PubMed

Ye, Zhibin; Liu, Chong; Tu, Bo; Wang, Ke; Gao, Qingsong; Tang, Chun; Cai, Zhen

2016-01-25

A direct-liquid-cooled Nd:YLF thin disk laser resonator is presented, which features the use of refractive index matching liquid (RIML) as coolant. Highly uniform pump intensity distribution with rectangular shape is realized by using metallic planar waveguides. Much attention has been paid on the design of the gain module, including how to achieve excellent cooling ability with multi-channel coolers and how to choose the doping levels of the crystals for realizing well-distributed pump absorption. The flow velocity of the coolant is found to be a key parameter for laser performance and optimized to keep it in laminar flow status for dissipating unwanted heat load. A single channel device is used to measure the convective heat transfer coefficient (CHTC) at different flow velocities. Accordingly, the thermal stress in the disk is analyzed numerically and the maximum permissible thermal load is estimated. Experimentally, with ten pieces of a-cut Nd:YLF thin disks of different doping levels, a linear polarized laser with an average output power of 1120 W is achieved at the pump power of 5202 W, corresponding to an optical-optical efficiency of 21.5%, and a slope efficiency of 30.8%. Furthermore, the wavefront aberration of the gain module is measured to be quite weak, with a peak to valley (PV) value of 4.0 μm when it is pumped at 5202 W, which enables the feasibility of its application in an unstable resonator. To the best of our knowledge, this is the first demonstration of kilowatt-level direct-'refractive index matching liquid'-cooled Nd:YLF thin disk laser resonator.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

NASA Technical Reports Server (NTRS)

Agrawal, Govind P.; Goorjian, Peter M.

1998-01-01

The main objective of the Joint-Research Interchange NCC2-5149 was to develop computer codes for accurate simulation of femtosecond pulse propagation in semiconductor lasers and semiconductor amplifiers [I]. The code should take into account all relevant processes such as the interband and intraband carrier relaxation mechanisms and the many-body effects arising from the Coulomb interaction among charge carriers [2]. This objective was fully accomplished. We made use of a previously developed algorithm developed at NASA Ames [3]-[5]. The new algorithm was tested on several problems of practical importance. One such problem was related to the amplification of femtosecond optical pulses in semiconductors. These results were presented in several international conferences over a period of three years. With the help of a postdoctoral fellow, we also investigated the origin of instabilities that can lead to the formation of femtosecond pulses in different kinds of lasers. We analyzed the occurrence of absolute instabilities in lasers that contain a dispersive host material with third-order nonlinearities. Starting from the Maxwell-Bloch equations, we derived general multimode equations to distinguish between convective and absolute instabilities. We find that both self-phase modulation and intensity-dependent absorption can dramatically affect the absolute stability of such lasers. In particular, the self-pulsing threshold (the so-called second laser threshold) can occur at few times the first laser threshold even in good-cavity lasers for which no self-pulsing occurs in the absence of intensity-dependent absorption. These results were presented in an international conference and published in the form of two papers.

Elucidation of Metallic Plume and Spatter Characteristics Based on SVM During High-Power Disk Laser Welding

NASA Astrophysics Data System (ADS)

Gao, Xiangdong; Liu, Guiqian

2015-01-01

During deep penetration laser welding, there exist plume (weak plasma) and spatters, which are the results of weld material ejection due to strong laser heating. The characteristics of plume and spatters are related to welding stability and quality. Characteristics of metallic plume and spatters were investigated during high-power disk laser bead-on-plate welding of Type 304 austenitic stainless steel plates at a continuous wave laser power of 10 kW. An ultraviolet and visible sensitive high-speed camera was used to capture the metallic plume and spatter images. Plume area, laser beam path through the plume, swing angle, distance between laser beam focus and plume image centroid, abscissa of plume centroid and spatter numbers are defined as eigenvalues, and the weld bead width was used as a characteristic parameter that reflected welding stability. Welding status was distinguished by SVM (support vector machine) after data normalization and characteristic analysis. Also, PCA (principal components analysis) feature extraction was used to reduce the dimensions of feature space, and PSO (particle swarm optimization) was used to optimize the parameters of SVM. Finally a classification model based on SVM was established to estimate the weld bead width and welding stability. Experimental results show that the established algorithm based on SVM could effectively distinguish the variation of weld bead width, thus providing an experimental example of monitoring high-power disk laser welding quality.

Single-mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

NASA Astrophysics Data System (ADS)

Griffel, Giora; Chen, Howard Z.; Grave, Ilan; Yariv, Amnon

1991-04-01

The operation of a novel multisection structure comprised of laterally coupled gain-guided semiconductor lasers is demonstrated. It is shown that tunable single longitudinal mode operation can be achieved with a high degree of frequency selectivity. The device has a tuning range of 14.5 nm, the widest observed to date in a monolithic device.

Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

NASA Technical Reports Server (NTRS)

Suematsu, Y.; Iga, K.

1980-01-01

Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Refractive indices of superlattices made of III-V semiconductor compounds and their solid solutions and semiconductor waveguide laser structures

NASA Astrophysics Data System (ADS)

Unger, K.

1988-11-01

An analysis is made of the theoretical problems encountered in precision calculations of refractive indices of semiconductor materials arising in connection with the use of superlattices as active layers in double-heterostructure lasers and in connection with the use of the impurity-induced disordering effect, i.e., the ability to transform selectively a superlattice into a corresponding solid solution. This can be done by diffusion or ion implantation. A review is given of calculations of refractive indices based on the knowledge of the energy band structure and the role of disorder is considered particularly. An anomaly observed in the (InAl)As system is considered. It is shown that the local field effects and exciton transitions are important. A reasonable approach is clearly a direct calculation of the difference between the refractive indices of superlattices based on compounds and of those based on their solid solutions.

Optical Properties of A GaInNAs Multi-Quantum Well Semiconductor

NASA Astrophysics Data System (ADS)

Hughes, Timothy S.; Ren, Shang-Fen; Jiang, De-Sheng; Xiaogan, Liang

2002-03-01

Optoelectronic devices used today depend on lasers that have wavelengths in the optical fiber transmission window of 1.3 to 1.55 micrometers. When using GaAs substrate semiconductor lasers, we typically see this range of light emission. Quaternary materials, such as GaInNAs grown on this substrate, not only allow us to control the output wavelength, but it also allows us to manipulate the lattice constant. Further research has potential to produce low-costing highly efficient Vertical Cavity Surface Emitting Lasers (VCSEL). Using a Fourier-Transform Spectrometer, a method of using a Michelson Interferometer to measure the interference between two coherent beams, we measured and analyzed the photoluminescence spectra of a GaInNAs multi-quantum well semiconductor, grown using the Molecular Beam Epitaxy (MBE) growth technique. The experiments of this research were carried out in an undergraduate international research experience at the Chinese Semiconductor Institute supported by the Division of International Programs of NSF.

Multi-level multi-thermal-electron FDTD simulation of plasmonic interaction with semiconducting gain media: applications to plasmonic amplifiers and nano-lasers.

PubMed

Chen, X; Bhola, B; Huang, Y; Ho, S T

2010-08-02

Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.

Coupled-resonator vertical-cavity lasers with two active gain regions

DOEpatents

Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

2003-05-20

A new class of coupled-resonator vertical-cavity semiconductor lasers has been developed. These lasers have multiple resonant cavities containing regions of active laser media, resulting in a multi-terminal laser component with a wide range of novel properties.

Tunable semiconductor laser at 1025-1095 nm range for OCT applications with an extended imaging depth

NASA Astrophysics Data System (ADS)

Shramenko, Mikhail V.; Chamorovskiy, Alexander; Lyu, Hong-Chou; Lobintsov, Andrei A.; Karnowski, Karol; Yakubovich, Sergei D.; Wojtkowski, Maciej

2015-03-01

Tunable semiconductor laser for 1025-1095 nm spectral range is developed based on the InGaAs semiconductor optical amplifier and a narrow band-pass acousto-optic tunable filter in a fiber ring cavity. Mode-hop-free sweeping with tuning speeds of up to 104 nm/s was demonstrated. Instantaneous linewidth is in the range of 0.06-0.15 nm, side-mode suppression is up to 50 dB and polarization extinction ratio exceeds 18 dB. Optical power in output single mode fiber reaches 20 mW. The laser was used in OCT system for imaging a contact lens immersed in a 0.5% intra-lipid solution. The cross-section image provided the imaging depth of more than 5mm.

Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

PubMed

Hagmann, Mark J; Yarotski, Dmitry A; Mousa, Marwan S

2017-04-01

Quasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

PLANNING FOR OPTICAL DISK TECHNOLOGY WITH DIGITAL CARTOGRAPHY.

USGS Publications Warehouse

Light, Donald L.

1984-01-01

Progress in the computer field continues to suggest that the transition from traditional analog mapping systems to digital systems has become a practical possibility. A major shortfall that still exists in digital systems is the need for very large mass storage capacity. The decade of the 1980's has introduced laser optical disk storage technology, which may be the breakthrough needed for mass storage. This paper addresses system concepts for digital cartography during the transition period. Emphasis is placed on determining U. S. Geological Survey mass storage requirements and introducing laser optical disk technology for handling storage problems for digital data in this decade.

Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

PubMed

Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

2013-04-08

In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

Commercial mode-locked vertical external cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

2018-02-01

This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

Stimulated Brillouin scattering of laser radiation in a compensated magnetoactive semiconductor

NASA Astrophysics Data System (ADS)

Ferdous, T.; Salahuddin, M.; Amin, M. R.; Salimullah, M.

1995-09-01

In the present paper we have studied the stimulated Brillouin scattering of laser radiation in a compensated magnetoactive semiconductor. The nonlinearity in the low-frequency ion-acoustic wave arises through the ponderomotive force on both electrons and holes. The high-frequency nonlinearity arises through the nonlinear current density. For typical plasma parameters in compensated Ge, ɛL=16, T0=77 K, n00=1017 cm-3, Bs=60 kG, θ=30°, laser power density corresponding to a CO2 laser ~=0.1 MW cm-2, the growth rate of the low-frequency ion-acoustic wave turns out to be ~=107 rad sec-1.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the semiconductor device group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. These efforts, in addition to yielding diodes with ns switching speeds, led to the development in early 1962 of diodes which emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

Research at Lincoln Laboratory leading up to the development of the injection laser in 1962

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rediker, R.H.

1987-06-01

In 1958 the Semiconductor Device Group at Lincoln Laboratory began to concentrate its efforts on exploiting GaAs. these efforts, in addition to yielding diodes which ns switching speeds, led to the development in early 1962 of diodes that emitted near-bandgap radiation with very high efficiency, and to the development in October 1962 of the diode laser. The theory of the semiconductor laser developed at Lincoln Laboratory in the mid-to-late 1950's provided the foundation necessary for the design of the diode laser structure after the highly efficient production of near-bandgap radiation was demonstrated.

All-semiconductor high-speed akinetic swept-source for OCT

NASA Astrophysics Data System (ADS)

Minneman, Michael P.; Ensher, Jason; Crawford, Michael; Derickson, Dennis

2011-12-01

A novel swept-wavelength laser for optical coherence tomography (OCT) using a monolithic semiconductor device with no moving parts is presented. The laser is a Vernier-Tuned Distributed Bragg Reflector (VT-DBR) structure exhibiting a single longitudinal mode. All-electronic wavelength tuning is achieved at a 200 kHz sweep repetition rate, 20 mW output power, over 100 nm sweep width and coherence length longer than 40 mm. OCT point-spread functions with 45- 55 dB dynamic range are demonstrated; lasers at 1550 nm, and now 1310 nm, have been developed. Because the laser's long-term tuning stability allows for electronic sample trigger generation at equal k-space intervals (electronic k-clock), the laser does not need an external optical k-clock for measurement interferometer sampling. The non-resonant, allelectronic tuning allows for continuously adjustable sweep repetition rates from mHz to 100s of kHz. Repetition rate duty cycles are continuously adjustable from single-trigger sweeps to over 99% duty cycle. The source includes a monolithically integrated power leveling feature allowing flat or Gaussian power vs. wavelength profiles. Laser fabrication is based on reliable semiconductor wafer-scale processes, leading to low and rapidly decreasing cost of manufacture.

Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

DOEpatents

Mazur, Eric; Shen, Mengyan

2013-12-03

The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

Head flying characteristics in heat assisted magnetic recording considering various nanoscale heat transfer models

NASA Astrophysics Data System (ADS)

Hu, Yueqiang; Wu, Haoyu; Meng, Yonggang; Wang, Yu; Bogy, David

2018-01-01

The thermal issues in heat-assisted magnetic recording (HAMR) technology have drawn much attention in the recent literature. In this paper, the head flying characteristics and thermal performance of a HAMR system during the touch-down process considering different nanoscale heat transfer models across the head-disk interface are numerically studied. An optical-thermal-mechanical coupled model is first described. The coupling efficiency of the near field transducer is found to be dependent on the head disk clearance. The shortcomings of a constant disk-temperature model are investigated, which reveals the importance of considering the disk temperature as a variable. A study of the head flying on the disk is carried out using an air conduction model and additional near-field heat transfer models. It is shown that when the head disk interface is filled with a solid material caused by the laser-induced accumulation, the heat transfer coefficient can become unexpectedly large and the head's temperature can rise beyond desirable levels. Finally, the additional head protrusion due to the laser heating is investigated.

Communication scheme using a hyperchaotic semiconductor laser model: Chaos shift key revisited

NASA Astrophysics Data System (ADS)

Fataf, N. A. A.; Palit, Sanjay Kumar; Mukherjee, Sayan; Said, M. R. M.; Son, Doan Hoai; Banerjee, Santo

2017-11-01

Based on the Maxwell-Bloch equations, we considered a five-dimensional ODE system, describing the dynamics of a semiconductor laser. The system has rich dynamics with multi-periodic, chaotic and hyperchaotic states. In this analysis, we have investigated the hyperchaotic nature of the aforesaid model and proposed a communication scheme, the generalized form of chaos shift keys, where the coupled systems do not need to be in the synchronized state. The results are implemented with the hyperchaotic laser model followed by a comprehensive security analysis.

Width-tunable pulse laser via optical injection induced gain modulation of semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Pan, Honggang; Zhang, Ailing; Tong, Zhengrong; Zhang, Yue; Song, Hongyun; Yao, Yuan

2018-03-01

A width-tunable pulse laser via an optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated. When the pump current of the SOA is 330 mA or 400 mA and a continuous wave is injected into the laser cavity with different powers, bright or dark pulses with different pulse widths and frequency repetition rates are obtained. The bright and dark pulses are formed by the effect of gain dispersion and cross-gain modulation of the SOA.

Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology.

PubMed

Li, Jingsi; Wang, Huan; Chen, Xiangfei; Yin, Zuowei; Shi, Yuechun; Lu, Yanqing; Dai, Yitang; Zhu, Hongliang

2009-03-30

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology.

Excitability in semiconductor microring lasers: Experimental and theoretical pulse characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gelens, L.; Coomans, W.; Van der Sande, G.

2010-12-15

We characterize the operation of semiconductor microring lasers in an excitable regime. Our experiments reveal a statistical distribution of the characteristics of noise-triggered optical pulses that is not observed in other excitable systems. In particular, an inverse correlation exists between the pulse amplitude and duration. Numerical simulations and an interpretation in an asymptotic phase space confirm and explain these experimentally observed pulse characteristics.

HiLASE: development of fully diode pumped disk lasers with high average power

NASA Astrophysics Data System (ADS)

Divoky, M.; Smrz, M.; Chyla, M.; Sikocinski, P.; Severova, P.; Novák, O.; Huynh, J.; Nagisetty, S. S.; Miura, T.; Liberatore, C.; Pilař, J.; Slezak, O.; Sawicka, M.; Jambunathan, V.; Gemini, L.; Vanda, J.; Svabek, R.; Endo, A.; Lucianetti, A.; Rostohar, D.; Mason, P. D.; Phillips, P. J.; Ertel, K.; Banerjee, S.; Hernandez-Gomez, C.; Collier, J. L.; Mocek, T.

2015-02-01

An overview of Czech national R&D project HiLASE (High average power pulsed LASEr) is presented. The HiLASE project aims at development of pulsed DPSSL for hi-tech industrial applications. HiLASE will be a user oriented facility with several laser systems with output parameters ranging from a few picosecond pulses with energy of 5 mJ to 0.5 J and repetition rate of 1-100 kHz (based on thin disk technology) to systems with 100 J output energy in nanosecond pulses with repetition rate of 10 Hz (based on multi-slab technology).

Properties of a vector soliton laser passively mode-locked by a fiber-based semiconductor saturable absorber operating in transmission

NASA Astrophysics Data System (ADS)

Ouyang, Chunmei; Wang, Honghai; Shum, Ping; Fu, Songnian; Wong, Jia Haur; Wu, Kan; Lim, Desmond Rodney Chin Siong; Wong, Vincent Kwok Huei; Lee, Kenneth Eng Kian

2011-01-01

We experimentally demonstrate a passively mode-locked fiber laser employing a fiber-based semiconductor saturable absorber (SSA) operating in transmission. Polarization rotation locked vector solitons are observed in the laser. Due to the intrinsic dynamic feature of the laser, period-doubling of these vector solitons has also been observed. Furthermore, extra spectral sidebands are formed on the optical spectrum, caused by the energy exchange between the two orthogonal polarization components of the vector solitons. By careful reduction of the pump power together with fine adjustment to the cavity birefringence, period-one state can further be obtained. Additionally, the phase noise properties of the vector soliton fiber laser have also been characterized experimentally and analytically.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andrew James

2016-05-03

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Method and system for homogenizing diode laser pump arrays

DOEpatents

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

[Dynamic Wavelength Characteristics of Semiconductor Laser in Electric Current Tuning Process].

PubMed

Liu, Jing-wang; Li, Zhong-yang; Zhang, Wei-zhong; Wang, Qing-chuan; An, Ying; Li, Yong-hui

2015-11-01

In order to measure the dynamic wavelength of semiconductor lasers under current tuning, an improved method of fi- ber delay self-heterodyne interferometer was proposed. The measurement principle, as well the beat frequency and dynamic wavelength of recursive relations are theoretically analyzed. The application of the experimental system measured the dynamic wavelength characteristics of distributed feedback semiconductor laser and the static wavelength characteristics measurement by the spectrometer. The comparison between the two values indicates that both dynamic and static wavelength characteristic with the current tuning are the similar non-linear curve. In 20-100 mA current tuning range, the difference of them is less than 0.002 nm. At the same time, according to the absorption lines of CO2 gas, and HITRAN spectrum library, we can identify the dynamic wavelength of the laser. Comparing it with dynamic wavelength calculated by the beat signal, the difference is only 0.001 nm, which verifies the reliability of the experimental system to measure the dynamic wavelength.

External control of semiconductor nanostructure lasers

NASA Astrophysics Data System (ADS)

Naderi, Nader A.

2011-12-01

Novel semiconductor nanostructure laser diodes such as quantum-dot and quantum-dash are key optoelectronic candidates for many applications such as data transmitters in ultra fast optical communications. This is mainly due to their unique carrier dynamics compared to conventional quantum-well lasers that enables their potential for high differential gain and modified linewidth enhancement factor. However, there are known intrinsic limitations associated with semiconductor laser dynamics that can hinder the performance including the mode stability, spectral linewidth, and direct modulation capabilities. One possible method to overcome these limitations is through the use of external control techniques. The electrical and/or optical external perturbations can be implemented to improve the parameters associated with the intrinsic laser's dynamics, such as threshold gain, damping rate, spectral linewidth, and mode selectivity. In this dissertation, studies on the impact of external control techniques through optical injection-locking, optical feedback and asymmetric current bias control on the overall performance of the nanostructure lasers were conducted in order to understand the associated intrinsic device limitations and to develop strategies for controlling the underlying dynamics to improve laser performance. In turn, the findings of this work can act as a guideline for making high performance nanostructure lasers for future ultra fast data transmitters in long-haul optical communication systems, and some can provide an insight into making a compact and low-cost terahertz optical source for future implementation in monolithic millimeter-wave integrated circuits.

Cell Attachment Following Instrumentation with Titanium and Plastic Instruments, Diode Laser, and Titanium Brush on Titanium, Titanium-Zirconium, and Zirconia Surfaces.

PubMed

Lang, Melissa S; Cerutis, D Roselyn; Miyamoto, Takanari; Nunn, Martha E

2016-01-01

The aim of this study was to evaluate the surface characteristics and gingival fibroblast adhesion of disks composed of implant and abutment materials following brief and repeated instrumentation with instruments commonly used in procedures for implant maintenance, stage-two implant surgery, and periimplantitis treatment. One hundred twenty disks (40 titanium, 40 titaniumzirconium, 40 zirconia) were grouped into treatment categories of instrumentation by plastic curette, titanium curette, diode microlaser, rotary titanium brush, and no treatment. Twenty strokes were applied to half of the disks in the plastic and titanium curette treatment categories, while half of the disks received 100 strokes each to simulate implant maintenance occurring on a repetitive basis. Following analysis of the disks by optical laser profilometry, disks were cultured with human gingival fibroblasts. Cell counts were conducted from scanning electron microscopy (SEM) images. Differences in surface roughness across all instruments tested for zirconia disks were negligible, while both titanium disks and titaniumzirconium disks showed large differences in surface roughness across the spectrum of instruments tested. The rotary titanium brush and the titanium curette yielded the greatest overall mean surface roughness, while the plastic curette yielded the lowest mean surface roughness. The greatest mean cell counts for each disk type were as follows: titanium disks with plastic curettes, titanium-zirconium disks with titanium curettes, and zirconia disks with the diode microlaser. Repeated instrumentation did not result in cumulative changes in surface roughness of implant materials made of titanium, titanium-zirconium, or zirconia. Instrumentation with plastic implant curettes on titanium and zirconia surfaces appeared to be more favorable than titanium implant curettes in terms of gingival fibroblast attachment on these surfaces.

Interband optical pulse injection locking of quantum dot mode-locked semiconductor laser.

PubMed

Kim, Jimyung; Delfyett, Peter J

2008-07-21

We experimentally demonstrate optical clock recovery from quantum dot mode-locked semiconductor lasers by interband optical pulse injection locking. The passively mode-locked slave laser oscillating on the ground state or the first excited state transition is locked through the injection of optical pulses generated via the opposite transition bands, i.e. the first excited state or the ground state transition from the hybridly mode-locked master laser, respectively. When an optical pulse train generated via the first excited state from the master laser is injected to the slave laser oscillating via ground state, the slave laser shows an asymmetric locking bandwidth around the nominal repetition rate of the slave laser. In the reverse injection case of, i.e. the ground state (master laser) to the first excited state (slave laser), the slave laser does not lock even though both lasers oscillate at the same cavity frequency. In this case, the slave laser only locks to higher injection rates as compared to its own nominal repetition rate, and also shows a large locking bandwidth of 6.7 MHz.

Nanocrystal structures

DOEpatents

Eisler, Hans J [Stoneham, MA; Sundar, Vikram C [Stoneham, MA; Walsh, Michael E [Everett, MA; Klimov, Victor I [Los Alamos, NM; Bawendi, Moungi G [Cambridge, MA; Smith, Henry I [Sudbury, MA

2008-12-30

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Nanocrystal structures

DOEpatents

Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

2006-12-19

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Superfocusing of mutimode semiconductor lasers and light-emitting diodes

NASA Astrophysics Data System (ADS)

Sokolovskii, G. S.; Dudelev, V. V.; Losev, S. N.; Deryagin, A. G.; Kuchinskii, V. I.; Sibbett, W.; Rafailov, E. U.

2012-05-01

The problem of focusing multimode radiation of high-power semiconductor lasers and light-emitting diodes (LEDs) has been studied. In these sources, low spatial quality of the output beam determines theoretical limit of the focal spot size (one to two orders of magnitude exceeding the diffraction limit), thus restricting the possibility of increasing power density and creating optical field gradients that are necessary in many practical applications. In order to overcome this limitation, we have developed a method of superfocusing of multimode radiation with the aid of interference. It is shown that, using this method, the focal spot size of high-power semiconductor lasers and LEDs can be reduced to a level unachievable by means of traditional focusing. An approach to exceed the theoretical limit of power density for focusing of radiation with high propagation parameter M 2 is proposed.

Semiconductor laser self-mixing micro-vibration measuring technology based on Hilbert transform

NASA Astrophysics Data System (ADS)

Tao, Yufeng; Wang, Ming; Xia, Wei

2016-06-01

A signal-processing synthesizing Wavelet transform and Hilbert transform is employed to measurement of uniform or non-uniform vibrations in self-mixing interferometer on semiconductor laser diode with quantum well. Background noise and fringe inclination are solved by decomposing effect, fringe counting is adopted to automatic determine decomposing level, a couple of exact quadrature signals are produced by Hilbert transform to extract vibration. The tempting potential of real-time measuring micro vibration with high accuracy and wide dynamic response bandwidth using proposed method is proven by both simulation and experiment. Advantages and error sources are presented as well. Main features of proposed semiconductor laser self-mixing interferometer are constant current supply, high resolution, simplest optical path and much higher tolerance to feedback level than existing self-mixing interferometers, which is competitive for non-contact vibration measurement.

Method for mounting laser fusion targets for irradiation

DOEpatents

Fries, R. Jay; Farnum, Eugene H.; McCall, Gene H.

1977-07-26

Methods for preparing laser fusion targets of the ball-and-disk type are disclosed. Such targets are suitable for irradiation with one or two laser beams to produce the requisite uniform compression of the fuel material.

Attacking the information access problem with expert systems

NASA Technical Reports Server (NTRS)

Ragusa, James M.; Orwig, Gary W.

1991-01-01

The results of applications research directed at finding an improved method of storing and accessing information are presented. Twelve microcomputer-based expert systems shells and five laser-optical formats have been studied, and the general and specific methods of interfacing these technologies are being tested in prototype systems. Shell features and interfacing capabilities are discussed, and results from the study of five laser-optical formats are recounted including the video laser, compact, and WORM disks, and laser cards and film. Interfacing, including laser disk device driver interfacing, is discussed and it is pointed out that in order to control the laser device from within the expert systems application, the expert systems shell must be able to access the device driver software. Potential integrated applications are investigated and an initial list is provided including consumer services, travel, law enforcement, human resources, marketing, and education and training.

High temperature heat source generation with a very low power level quasi-cw(continuous wave) semiconductor laser for medical use

NASA Astrophysics Data System (ADS)

Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Fujioka, Tomoo; Yamaguchi, Shigeru

2013-03-01

In most of medical and dental laser treatments, high power pulsed laser have been used as desirable light sources employing with an optical fiber delivery system. The treatment process involves high temperature thermal effect associated with direct laser absorption of the materials such as hard and soft tissues, tooth, bones and so on. Such treatments sometimes face technical difficulties suffering from their optical absorption properties. We investigate a new technology to create high temperature heat source on the tip surface of the glass fiber proposed for the medical surgery applications. Using a low power level (4 6W) semiconductor laser at a wavelength of 980nm, a laser coupled fiber tip was pre-processed to contain certain amount of TiO2 powder with a depth of 400μm from the tip surface so that the irradiated low laser energy could be perfectly absorbed to be transferred to thermal energy. Thus the laser treatment can be performed without suffering from any optical characteristic of the material. Semiconductor laser was operated quasi-CW mode pulse time duration of 180ms and more than 95% of the laser energy was converted to thermal energy in the fiber tip. by Based on twocolor thermometry by using a gated optical multichannel analyzer with 0.25m spectrometer in visible wavelength region, the temperature of the fiber tip was analyzed. The temperature of the heat source was measured to be approximately 3000K. Demonstration of laser processing employing this system was successfully carried out drilling through holes in ceramic materials simulating bone surgery.

Light intensity-voltage correlations and leakage-current excess noise in a single-mode semiconductor laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurin, I.; Bramati, A.; Giacobino, E.

2005-09-15

Semiconductor lasers are particularly well suited for the implementation of pump-noise suppression, yielding a reduction of the intensity noise in the laser. In this simple picture, the maximal amount of squeezing is equal to the quantum efficiency. However, experimental results on intensity noise reduction by pump-noise suppression are usually above this limit. This discrepancy suggests that additional noise sources must be involved. Here we successful y interpret the full noise behavior of a single-mode laser diode far above threshold by considering two excess noise sources: the leakage current fluctuations across the laser and the Petermann excess noise. We have estimatedmore » the contribution of each noise source using the results of the correlations between the laser output intensity noise and the voltage fluctuations across the laser diode (light-voltage correlations) and obtained good agreement between our theory and experimental results.« less

Diode Lasers and Practical Trace Analysis.

ERIC Educational Resources Information Center

Imasaka, Totaro; Nobuhiko, Ishibashi

1990-01-01

Applications of lasers to molecular absorption spectrometry, molecular fluorescence spectrometry, visible semiconductor fluorometry, atomic absorption spectrometry, and atomic fluorescence spectrometry are discussed. Details of the use of the frequency-doubled diode laser are provided. (CW)

Effects of High Power Lasers, Number 7, November 1975 - Jun 1976

DTIC Science & Technology

1976-09-28

June 1976. Articles are grouped by laser interaction with metals, dielectrics, semiconductors, miscellaneous targets, and laser-plasma interaction. A first- author index and an index of source abbreviations are appended.

Apertureless scanning microscope probe as a detector of semiconductor laser emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dunaevskiy, Mikhail, E-mail: Mike.Dunaeffsky@mail.ioffe.ru; National Research University of Information Technologies, Mechanics and Optics; Dontsov, Anton

2015-04-27

An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the lightmore » absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.« less

High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures.

PubMed

Haggett, Stephanie; Krakowski, Michel; Montrosset, Ivo; Cataluna, Maria Ana

2014-09-22

A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.

Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

PubMed

Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

2013-11-18

Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

Frequency control using a complex effective reflectivity in laterally coupled semiconductor laser arrays.

PubMed

Griffel, G; Marshall, W K; Gravé, I; Yariv, A; Nabiev, R

1991-08-01

Frequency selectivity of a novel type of multielement, multisection laterally coupled semiconductor laser array is studied using the round-trip method. It is found that such a structure should lead to a strong frequency selectivity owing to a periodic dependency of the threshold gain on the frequency. A gain-guided two-coupledcavity device was fabricated. The experimental results show excellent agreement with the theoretical prediction.

Spiking Excitable Semiconductor Laser as Optical Neurons: Dynamics, Clustering and Global Emerging Behaviors

DTIC Science & Technology

2014-06-28

constructed from inexpensive semiconductor lasers could lead to the development of novel neuro-inspired optical computing devices (threshold detectors ...optical computing devices (threshold detectors , logic gates, signal recognition, etc.). Other topics of research included the analysis of extreme events in...Extreme events is nowadays a highly active field of research. Rogue waves, earthquakes of high magnitude and financial crises are all rare and

Waveguide embedded plasmon laser with multiplexing and electrical modulation

DOEpatents

Ma, Ren-min; Zhang, Xiang

2017-08-29

This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.

kW picosecond thin-disk regenerative amplifier

NASA Astrophysics Data System (ADS)

Michel, Knut; Wandt, Christoph; Klingebiel, Sandro; Schultze, Marcel; Prinz, Stephan; Teisset, Catherine Y.; Stark, Sebastian; Grebing, Christian; Bessing, Robert; Herzig, Tobias; Häfner, Matthias; Budnicki, Aleksander; Sutter, Dirk; Metzger, Thomas

2018-02-01

TRUMPF Scientific Lasers provides ultrafast laser sources for the scientific community with high pulse energies and high average power. All systems are based on the industrialized TRUMPF thin-disk technology. Regenerative amplifiers systems with multi-millijoule pulses, kilohertz repetition rates and picosecond pulse durations are available. Record values of 220mJ at 1kHz could be demonstrated originally developed for pumping optical parametric amplifiers. The ultimate goal is to combine high energies, <100mJ per pulse, with average powers of several hundred watts to a kilowatt. Based on a regenerative amplifier containing two Ytterbium doped thin-disks operated at ambient temperature pulses with picosecond duration and more than 100mJ could be generated at a repetition rate of 10kHz reaching 1kW of average output power. This system is designed to operate at different repetition rates from 100kHz down to 5kHz so that even higher pulse energies can be reached. This type of ultrafast sources uncover new application fields in science. Laser based lightning rods, X-ray lasers and Compton backscatter sources are among them.

Monolithic dual-mode distributed feedback semiconductor laser for tunable continuous-wave terahertz generation.

PubMed

Kim, Namje; Shin, Jaeheon; Sim, Eundeok; Lee, Chul Wook; Yee, Dae-Su; Jeon, Min Yong; Jang, Yudong; Park, Kyung Hyun

2009-08-03

We report on a monolithic dual-mode semiconductor laser operating in the 1550-nm range as a compact optical beat source for tunable continuous-wave (CW) terahertz (THz) generation. It consists of two distributed feedback (DFB) laser sections and one phase section between them. Each wavelength of the two modes can be independently tuned by adjusting currents in micro-heaters which are fabricated on the top of the each DFB section. The continuous tuning of the CW THz emission from Fe(+)-implanted InGaAs photomixers is successfully demonstrated using our dual-mode laser as the excitation source. The CW THz frequency is continuously tuned from 0.17 to 0.49 THz.

Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum

NASA Astrophysics Data System (ADS)

Wu, Linzhang; Tian, Wei; Gao, Feng

2004-09-01

This paper presents a self-consistent method to directly determine the effective refractive-index spectrum of a semiconductor quantum-well (QW) laser diode from the measured modal gain spectrum for a given current. The dispersion spectra of the optical waveguide confinement factor and the strongly carrier-density-dependent refractive index of the QW active layer of the test laser are also accurately obtained. The experimental result from a single QW GaInP/AlGaInP laser diode, which has 6 nm thick compressively strained Ga0.4InP active layer sandwiched by two 80 nm thick Al0.33GaInP, is presented.

High-energy side-peak emission of exciton-polariton condensates in high density regime

PubMed Central

Horikiri, Tomoyuki; Yamaguchi, Makoto; Kamide, Kenji; Matsuo, Yasuhiro; Byrnes, Tim; Ishida, Natsuko; Löffler, Andreas; Höfling, Sven; Shikano, Yutaka; Ogawa, Tetsuo; Forchel, Alfred; Yamamoto, Yoshihisa

2016-01-01

In a standard semiconductor laser, electrons and holes recombine via stimulated emission to emit coherent light, in a process that is far from thermal equilibrium. Exciton-polariton condensates–sharing the same basic device structure as a semiconductor laser, consisting of quantum wells coupled to a microcavity–have been investigated primarily at densities far below the Mott density for signatures of Bose-Einstein condensation. At high densities approaching the Mott density, exciton-polariton condensates are generally thought to revert to a standard semiconductor laser, with the loss of strong coupling. Here, we report the observation of a photoluminescence sideband at high densities that cannot be accounted for by conventional semiconductor lasing. This also differs from an upper-polariton peak by the observation of the excitation power dependence in the peak-energy separation. Our interpretation as a persistent coherent electron-hole-photon coupling captures several features of this sideband, although a complete understanding of the experimental data is lacking. A full understanding of the observations should lead to a development in non-equilibrium many-body physics. PMID:27193700

Deposition of dopant impurities and pulsed energy drive-in

DOEpatents

Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

2008-01-01

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Deposition of dopant impurities and pulsed energy drive-in

DOEpatents

Wickboldt, Paul; Carey, Paul G.; Smith, Patrick M.; Ellingboe, Albert R.

1999-01-01

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.

Deposition of dopant impurities and pulsed energy drive-in

DOEpatents

Wickboldt, P.; Carey, P.G.; Smith, P.M.; Ellingboe, A.R.

1999-06-29

A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique is disclosed. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques. 2 figs.

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

NASA Technical Reports Server (NTRS)

Tombrello, Thomas A. (Inventor); Qiu, Yuanxun (Inventor); Mendenhall, Marcus H. (Inventor)

1985-01-01

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

A Differential Polarized Light Interferometric System For Measuring Flatness Of Magnetic Disks

NASA Astrophysics Data System (ADS)

Jia, Wang; Da-Cheng, Li; Ye, Chen; Ling, Du; Mang, Cao

1987-01-01

A kind of differential polarizdd laser interferometric system for non-contact and dynamic measurement of the flatness characteristic of magnetic disks without the effect of the axial vibration is described in this papper.

Semiconductor ring lasers coupled by a single waveguide

NASA Astrophysics Data System (ADS)

Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

2012-06-01

We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

Extension of frequencies from maser to laser

PubMed Central

Nishizawa, Jun-ichi

2009-01-01

The present review describes the author’s involvement and contributions to the development of the semiconductor laser and terahertz oscillators at his laboratory during the period between 1957 and now. The author cites records to show that the idea of a semiconductor laser was documented as a Japanese patent in April 1957 prior to those of G. Gould in 1957 and C.H. Townes in 1958. Terahertz oscillators of high Q values with the use of GaP were developed and applied to areas like investigations of molecular dynamics, cancer diagnosis, etc., thus extending the frontiers of science. PMID:20009378

Time- and frequency-resolved measurements of frequency modulation and switching of a tunable semiconductor laser

NASA Astrophysics Data System (ADS)

Kuznetsov, M.; Stone, J.; Stulz, L. W.

1991-11-01

We report measurements of intensity as a function of both time and frequency for frequency modulation and switching of a tunable semiconductor laser. Because of the uncertainty principle limitations, the measured time-frequency signal can have a complex structure and does not show the simple-minded picture of a laser spectrum whose center frequency varies in time. The observations are explained by a theory of the time-dependent spectral measurements, well known in the field of speech analysis. We discuss implications for channel switching speed and channel interference in switched, frequency-multiplexed optical networks.

Demonstration of ultra-wideband (UWB) over fiber based on optical pulse-injected semiconductor laser.

PubMed

Juan, Yu-Shan; Lin, Fan-Yi

2010-04-26

We experimentally demonstrated the ultra-wideband (UWB) signal generation utilizing nonlinear dynamics of an optical pulse-injected semiconductor laser. The UWB signals generated are fully in compliant with the FCC mask for indoor radiation, while a large fractional bandwidth of 93% is achieved. To show the feasibility of UWB-over-fiber, transmission over a 2 km single-mode fiber and a wireless channel utilizing a pair of broadband antennas are examined. Moreover, proof of concept experiment on data encoding and decoding with 250 Mb/s in the optical pulse-injected laser is successfully demonstrated.

Graphene surface emitting terahertz laser: Diffusion pumping concept

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davoyan, Arthur R., E-mail: davoyan@seas.upenn.edu; Morozov, Mikhail Yu.; Popov, Vyacheslav V.

2013-12-16

We suggest a concept of a tunable graphene-based terahertz (THz) surface emitting laser with diffusion pumping. We employ significant difference in the electronic energy gap of graphene and a typical wide-gap semiconductor, and demonstrate that carriers generated in the semiconductor can be efficiently captured by graphene resulting in population inversion and corresponding THz lasing from graphene. We develop design principles for such a laser and estimate its performance. We predict up to 50 W/cm{sup 2} terahertz power output for 100 kW/cm{sup 2} pump power at frequency around 10 THz at room temperature.

Head-disk Interface Study for Heat Assisted Magnetic Recording (HAMR) and Plasmonic Nanolithography for Patterned Media

NASA Astrophysics Data System (ADS)

Xiong, Shaomin

The magnetic storage areal density keeps increasing every year, and magnetic recording-based hard disk drives provide a very cheap and effective solution to the ever increasing demand for data storage. Heat assisted magnetic recording (HAMR) and bit patterned media have been proposed to increase the magnetic storage density beyond 1 Tb/in2. In HAMR systems, high magnetic anisotropy materials are recommended to break the superparamagnetic limit for further scaling down the size of magnetic bits. However, the current magnetic transducers are not able to generate strong enough field to switch the magnetic orientations of the high magnetic anisotropy material so the data writing is not able to be achieved. So thermal heating has to be applied to reduce the coercivity for the magnetic writing. To provide the heating, a laser is focused using a near field transducer (NFT) to locally heat a ~(25 nm)2 spot on the magnetic disk to the Curie temperature, which is ~ 400 C-600°C, to assist in the data writing process. But this high temperature working condition is a great challenge for the traditional head-disk interface (HDI). The disk lubricant can be depleted by evaporation or decomposition. The protective carbon overcoat can be graphitized or oxidized. The surface quality, such as its roughness, can be changed as well. The NFT structure is also vulnerable to degradation under the large number of thermal load cycles. The changes of the HDI under the thermal conditions could significantly reduce the robustness and reliability of the HAMR products. In bit patterned media systems, instead of using the continuous magnetic granular material, physically isolated magnetic islands are used to store data. The size of the magnetic islands should be about or less than 25 nm in order to achieve the storage areal density beyond 1 Tb/in2. However, the manufacture of the patterned media disks is a great challenge for the current optical lithography technology. Alternative lithography solutions, such as nanoimprint, plasmonic nanolithography, could be potential candidates for the fabrication of patterned disks. This dissertation focuses mainly on: (1) an experimental study of the HDI under HAMR conditions (2) exploration of a plasmonic nanolithography technology. In this work, an experimental HAMR testbed (named "Cal stage") is developed to study different aspects of HAMR systems, including the tribological head-disk interface and heat transfer in the head-disk gap. A temperature calibration method based on magnetization decay is proposed to obtain the relationship between the laser power input and temperature increase on the disk. Furthermore, lubricant depletion tests under various laser heating conditions are performed. The effects of laser heating repetitions, laser power and disk speeds on lubricant depletion are discussed. Lubricant depletion under the optical focused laser beam heating and the NFT heating are compared, revealing that thermal gradient plays an important role for lubricant depletion. Lubricant reflow behavior under various conditions is also studied, and a power law dependency of lubricant depletion on laser heating repetitions is obtained from the experimental results. A conductive-AFM system is developed to measure the electrical properties of thin carbon films. The conductivity or resistivity is a good parameter for characterizing the sp2/sp3 components of the carbon films. Different heating modes are applied to study the degradation of the carbon films, including temperature-controlled electric heater heating, focused laser beam heating and NFT heating. It is revealed that the temperature and heating duration significantly affect the degradation of the carbon films. Surface reflectivity and roughness are changed under certain heating conditions. The failure of the NFT structure during slider flying is investigated using our in-house fabricated sliders. In order to extend the lifetime of the NFT, a two-stage heating scheme is proposed and a numerical simulation has verified the feasibility of this new scheme. The heat dissipated around the NFT structure causes a thermal protrusion. There is a chance for contact to occur between the protrusion and disk which can result in a failure of the NFT. A design method to combine both TFC protrusion and laser induced NFT protrusion is proposed to reduce the fly-height modulation and chance of head-disk contact. Finally, an integrated plasmonic nanolithography machine is introduced to fabricate the master template for patterned disks. The plasmonic nanolithography machine uses a flying slider with a plasmonic lens to expose the thermal resist on a spinning wafer. The system design, optimization and integration have been performed over the past few years. Several sub-systems of the plasmonic nanolithography machine, such as the radial and circumferential direction position control, high speed pattern generation, are presented in this work. The lithography results are shown as well.

Tailored surface-enhanced Raman nanopillar arrays fabricated by laser-assisted replication for biomolecular detection using organic semiconductor lasers.

PubMed

Liu, Xin; Lebedkin, Sergei; Besser, Heino; Pfleging, Wilhelm; Prinz, Stephan; Wissmann, Markus; Schwab, Patrick M; Nazarenko, Irina; Guttmann, Markus; Kappes, Manfred M; Lemmer, Uli

2015-01-27

Organic semiconductor distributed feedback (DFB) lasers are of interest as external or chip-integrated excitation sources in the visible spectral range for miniaturized Raman-on-chip biomolecular detection systems. However, the inherently limited excitation power of such lasers as well as oftentimes low analyte concentrations requires efficient Raman detection schemes. We present an approach using surface-enhanced Raman scattering (SERS) substrates, which has the potential to significantly improve the sensitivity of on-chip Raman detection systems. Instead of lithographically fabricated Au/Ag-coated periodic nanostructures on Si/SiO2 wafers, which can provide large SERS enhancements but are expensive and time-consuming to fabricate, we use low-cost and large-area SERS substrates made via laser-assisted nanoreplication. These substrates comprise gold-coated cyclic olefin copolymer (COC) nanopillar arrays, which show an estimated SERS enhancement factor of up to ∼ 10(7). The effect of the nanopillar diameter (60-260 nm) and interpillar spacing (10-190 nm) on the local electromagnetic field enhancement is studied by finite-difference-time-domain (FDTD) modeling. The favorable SERS detection capability of this setup is verified by using rhodamine 6G and adenosine as analytes and an organic semiconductor DFB laser with an emission wavelength of 631.4 nm as the external fiber-coupled excitation source.

Progress In Optical Memory Technology

NASA Astrophysics Data System (ADS)

Tsunoda, Yoshito

1987-01-01

More than 20 years have passed since the concept of optical memory was first proposed in 1966. Since then considerable progress has been made in this area together with the creation of completely new markets of optical memory in consumer and computer application areas. The first generation of optical memory was mainly developed with holographic recording technology in late 1960s and early 1970s. Considerable number of developments have been done in both analog and digital memory applications. Unfortunately, these technologies did not meet a chance to be a commercial product. The second generation of optical memory started at the beginning of 1970s with bit by bit recording technology. Read-only type optical memories such as video disks and compact audio disks have extensively investigated. Since laser diodes were first applied to optical video disk read out in 1976, there have been extensive developments of laser diode pick-ups for optical disk memory systems. The third generation of optical memory started in 1978 with bit by bit read/write technology using laser diodes. Developments of recording materials including both write-once and erasable have been actively pursued at several research institutes. These technologies are mainly focused on the optical memory systems for computer application. Such practical applications of optical memory technology has resulted in the creation of such new products as compact audio disks and computer file memories.

Strong optical field ionisation of solids

NASA Astrophysics Data System (ADS)

McDonald, C. R.; Ben Taher, A.; Brabec, T.

2017-11-01

Population transfer from the valence to conduction band in the presence of an intense laser field is explored theoretically in semiconductors and dielectrics. Experiments performed on dielectrics exposed to an intense laser field have divulged a population dynamics between valence and conduction band that differs from that observed in semiconductors. Our paper explores two aspects of ionisation in solids. (i) Contemporary ionisation theories do not take account of the coupling between the valence and conduction bands resulting in the absence the dynamic Stark shift. Our single-particle analysis identifies the absence of the dynamic Stark shift as a possible cause for the contrasting ionisation behaviours observed in dielectric and semiconductor materials. The dynamic Stark shift results in an increased bandgap as the laser intensity is increased. This suppresses ionisation to an extent where the main population dynamics results from virtual oscillations in the conduction band population. The dynamic Stark shift mainly affects larger bandgap materials which can be exposed to decidedly higher laser intensities. (ii) In the presence of laser dressed virtual population of the conduction band, elastic collisions potentially transmute virtual into real population resulting in ionisation. This process is explored in the context of the relaxation time approximation.

Design and Performance of a Miniature Lidar Wind Profiler (MLWP)

NASA Technical Reports Server (NTRS)

Cornwell, Donald M., Jr.; Miodek, Mariusz J.

1998-01-01

The directional velocity of the wind is one of the most critical components for understanding meteorological and other dynamic atmospheric processes. Altitude-resolved wind velocity measurements, also known as wind profiles or soundings, are especially necessary for providing data for meteorological forecasting and overall global circulation models (GCM's). Wind profiler data are also critical in identifying possible dangerous weather conditions for aviation. Furthermore, a system has yet to be developed for wind profiling from the surface of Mars which could also meet the stringent requirements on size, weight, and power of such a mission. Obviously, a novel wind profiling approach based on small and efficient technology is required to meet these needs. A lidar system based on small and highly efficient semiconductor lasers is now feasible due to recent developments in the laser and detector technologies. The recent development of high detection efficiency (50%), silicon-based photon-counting detectors when combined with high laser pulse repetition rates and long receiver integration times has allowed these transmitter energies to be reduced to the order of microjoules per pulse. Aerosol lidar systems using this technique have been demonstrated for both Q-switched, diode-pumped solid-state laser transmitters (lambda = 523 nm) and semiconductor diode lasers (lambda = 830 nm); however, a wind profiling lidar based on this technique has yet to be developed. We will present an investigation of a semiconductor-laser-based lidar system which uses the "edge-filter" direct detection technique to infer Doppler frequency shifts of signals backscattered from aerosols in the planetary boundary layer (PBL). Our investigation will incorporate a novel semiconductor laser design which mitigates the deleterious effects of frequency chirp in pulsed diode lasers, a problem which has limited their use in such systems in the past. Our miniature lidar could be used on a future Mars lander and perhaps find its own niche in terrestrial applications due to its potential low cost an small size.

Self-injection locked blue laser

NASA Astrophysics Data System (ADS)

Donvalkar, Prathamesh S.; Savchenkov, Anatoliy; Matsko, Andrey

2018-04-01

We demonstrate a 446.5 nm GaN semiconductor laser with sub-MHz linewidth. The linewidth reduction is achieved by locking the laser to a magnesium fluoride whispering gallery mode resonator characterized with 109 quality factor. Self-injection locking ensures single longitudinal mode operation of the laser.

Comparative assessment of erbium fiber ring lasers and reflective SOA linear lasers for fiber Bragg grating dynamic strain sensing.

PubMed

Wei, Heming; Krishnaswamy, Sridhar

2017-05-01

Fiber Bragg grating (FBG) dynamic strain sensors using both an erbium-based fiber ring laser configuration and a reflective semiconductor optical amplifier (RSOA)-based linear laser configuration are investigated theoretically and experimentally. Fiber laser models are first presented to analyze the output characteristics of both fiber laser configurations when the FBG sensor is subjected to dynamic strains at high frequencies. Due to differences in the transition times of erbium and the semiconductor (InP/InGaAsP), erbium-doped fiber amplifier (EDFA)- and RSOA-based fiber lasers exhibit different responses and regimes of stability when the FBG is subjected to dynamic strains. The responses of both systems are experimentally verified using an adaptive photorefractive two-wave mixing (TWM) spectral demodulation technique. The experimental results show that the RSOA-FBG fiber linear cavity laser is stable and can stably respond to dynamic strains at high frequencies. An example application using a multiplexed TWM interferometer to demodulate multiple FBG sensors is also discussed.

Simultaneous trilateral communication based on three mutually coupled chaotic semiconductor lasers with optical feedback.

PubMed

Li, Qiliang; Lu, Shanshan; Bao, Qi; Chen, Dewang; Hu, Miao; Zeng, Ran; Yang, Guowei; Li, Shuqin

2018-01-10

In this paper, we propose a chaos-based scheme allowing for trilateral communication among three mutually coupled chaotic semiconductor lasers. The coupling through a partially transparent optical mirror between two lasers induces the chaotic dynamics. We numerically solve the delay rate equations of three lasers and demonstrate that the dynamics is completely synchronous. Herein, each laser is not only a transmitter but a receiver; three different messages are encoded by simultaneously modulating bias current of the three lasers. By monitoring the synchronization error between transmitter and receiver, and comparing the error with the message of the local laser, we can decipher the message of the sender. The investigation indicates that these messages introduced on the two ends of each link among three lasers can be simultaneously transmitted and restored, so the system can realize simultaneous trilateral communication. In this scheme, an eavesdropper can monitor the synchronization error, but one has no way to obtain the bits that are being sent, so the trilateral communication is secure.

Applications of Optical Coherent Transient Technology to Pulse Shaping, Spectral Filtering, Arbitrary Waveform Generation and RF Beamforming

DTIC Science & Technology

2006-04-15

was amplified by injection locking of a high power diode laser and further amplified to -300 mW with a semiconductor optical amplifier. This light...amplifiers at 793nm, cascaded injection locked amplifiers at 793nm, and frequency chirped lasers at 793nm. 15. SUBJECT TERMS Optical Coherent Transients...injection- locking for broadband optical signal amplification ................. 34 2.10. Tapered semiconductor optical amplifier

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

High Power Mid Wave Infrared Semiconductor Lasers

DTIC Science & Technology

2006-06-15

resonance and the gain spectrum. The devices were grown using solid source molecular beam epitaxy (MBE) in a V80 reactor. Two side polished, undoped...verify the inherent low activation energy. N-type and P-type AISb, and various compositions of InxAl 1xSb, were grown by solid-source molecular beam ...level monitoring. Advances in epitaxial growth of semiconductor materials have allowed the development of Arsenic- free optically-pumped MWIR lasers on

Characterization of a High-SpeedHigh-Power Semiconductor Master-Oscillator Power-Amplifier (MOPA) Laser as a Free-Space Transmitter

NASA Astrophysics Data System (ADS)

Wright, M. W.

2000-04-01

Semiconductor lasers offer promise as high-speed transmitters for free-space optical communication systems. This article examines the performance of a semiconductor laser system in a master-oscillator power-amplifier (MOPA) geometry developed through a Small Business Innovation Research (SBIR) contract with SDL, Inc. The compact thermo-electric cooler (TEC) packaged device is capable of 1-W output optical power at greater than 2-Gb/s data rates and a wavelength of 960 nm. In particular, we have investigated the effects of amplified spontaneous emission on the modulation extinction ratio and bit-error rate (BER) performance. BERs of up to 10^(-9) were possible at 1.4 Gb/s; however, the modulation extinction ratio was limited to 6 dB. Other key parameters for a free-space optical transmitter, such as the electrical-optical efficiency (24 percent) and beam quality, also were measured.

Wide tuning range wavelength-swept laser with a single SOA at 1020 nm for ultrahigh resolution Fourier-domain optical coherence tomography.

PubMed

Lee, Sang-Won; Song, Hyun-Woo; Jung, Moon-Youn; Kim, Seung-Hwan

2011-10-24

In this study, we demonstrated a wide tuning range wavelength-swept laser with a single semiconductor optical amplifier (SOA) at 1020 nm for ultrahigh resolution, Fourier-domain optical coherence tomography (UHR, FD-OCT). The wavelength-swept laser was constructed with an external line-cavity based on a Littman configuration. An optical wavelength selection filter consisted of a grating, a telescope, and a polygon scanner. Before constructing the optical wavelength selection filter, we observed that the optical power, the spectrum bandwidth, and the center wavelength of the SOA were affected by the temperature of the thermoelectric (TE) cooler in the SOA mount as well as the applied current. Therefore, to obtain a wide wavelength tuning range, we adjusted the temperature of the TE cooler in the SOA mount. When the temperature in the TE cooler was 9 °C, our swept source had a tuning range of 142 nm and a full-width at half-maximum (FWHM) of 121.5 nm at 18 kHz. The measured instantaneous spectral bandwidth (δλ) is 0.085 nm, which was measured by an optical spectrum analyzer with a resolution bandwidth of 0.06 nm. This value corresponds to an imaging depth of 3.1 mm in air. Additionally, the averaged optical power of our swept source was 8.2 mW. In UHR, FD/SS-OCT using our swept laser, the measured axial resolution was 4.0 μm in air corresponding to 2.9 μm in tissue (n = 1.35). The sensitivity was measured to be 93.1 dB at a depth of 100 μm. Finally, we obtained retinal images (macular and optic disk) and a corneal image. © 2011 Optical Society of America

A spatially resolved retarding field energy analyzer design suitable for uniformity analysis across the surface of a semiconductor wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, S., E-mail: shailesh.sharma6@mail.dcu.ie; National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9; Gahan, D., E-mail: david.gahan@impedans.com

2014-04-15

A novel retarding field energy analyzer design capable of measuring the spatial uniformity of the ion energy and ion flux across the surface of a semiconductor wafer is presented. The design consists of 13 individual, compact-sized, analyzers, all of which are multiplexed and controlled by a single acquisition unit. The analyzers were tested to have less than 2% variability from unit to unit due to tight manufacturing tolerances. The main sensor assembly consists of a 300 mm disk to mimic a semiconductor wafer and the plasma sampling orifices of each sensor are flush with disk surface. This device is placedmore » directly on top of the rf biased electrode, at the wafer location, in an industrial capacitively coupled plasma reactor without the need for any modification to the electrode structure. The ion energy distribution, average ion energy, and average ion flux were measured at the 13 locations over the surface of the powered electrode to determine the degree of spatial nonuniformity. The ion energy and ion flux are shown to vary by approximately 20% and 5%, respectively, across the surface of the electrode for the range of conditions investigated in this study.« less

Coherence switching of a vertical-cavity semiconductor-laser for multimode biomedical imaging (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cao, Hui; Knitter, Sebastian; Liu, Changgeng; Redding, Brandon; Khokha, Mustafa Kezar; Choma, Michael Andrew

2017-02-01

Speckle formation is a limiting factor when using coherent sources for imaging and sensing, but can provide useful information about the motion of an object. Illumination sources with tunable spatial coherence are therefore desirable as they can offer both speckled and speckle-free images. Efficient methods of coherence switching have been achieved with a solid-state degenerate laser, and here we demonstrate a semiconductor-based degenerate laser system that can be switched between a large number of mutually incoherent spatial modes and few-mode operation. Our system is designed around a semiconductor gain element, and overcomes barriers presented by previous low spatial coherence lasers. The gain medium is an electrically-pumped vertical external cavity surface emitting laser (VECSEL) with a large active area. The use of a degenerate external cavity enables either distributing the laser emission over a large ( 1000) number of mutually incoherent spatial modes or concentrating emission to few modes by using a pinhole in the Fourier plane of the self-imaging cavity. To demonstrate the unique potential of spatial coherence switching for multimodal biomedical imaging, we use both low and high spatial coherence light generated by our VECSEL-based degenerate laser for imaging embryo heart function in Xenopus, an important animal model of heart disease. The low-coherence illumination is used for high-speed (100 frames per second) speckle-free imaging of dynamic heart structure, while the high-coherence emission is used for laser speckle contrast imaging of the blood flow.

Static and Dynamic Effects of Lateral Carrier Diffusion in Semiconductor Lasers

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

2002-01-01

Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. It is well known that the value of diffusion coefficients affects the threshold pumping current of a semiconductor laser. At the same time, the strength of carrier diffusion process is expected to affect the modulation bandwidth of an AC-modulated laser. It is important not only to investigate the combined DC and AC effects due to carrier diffusion, but also to separate the AC effects from that of the combined effects in order to provide design insights for high speed modulation. In this presentation, we apply a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations. The model allows microscopic calculation of the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature. We first studied combined AC and DC effects of lateral carrier diffusion by studying the bandwidth dependence on diffusion coefficient at a given DC current under small signal modulation. The results show an increase of modulation bandwidth with decrease in the diffusion coefficient. We simultaneously studied the effects of nonlinearity in the diffusion coefficient. To clearly identify how much of the bandwidth increase is a result of decrease in the threshold pumping current for smaller diffusion coefficient, thus an effective increase of DC pumping, we study the bandwidth dependence on diffusion coefficient at a given relative pumping. A detailed comparison of the two cases will be presented.

Concept of the solar-pumped laser-photovoltaics combined system and its application to laser beam power feeding to electric vehicles

NASA Astrophysics Data System (ADS)

Motohiro, Tomoyoshi; Takeda, Yasuhiko; Ito, Hiroshi; Hasegawa, Kazuo; Ikesue, Akio; Ichikawa, Tadashi; Higuchi, Kazuo; Ichiki, Akihisa; Mizuno, Shintaro; Ito, Tadashi; Yamada, Noboru; Nath Luitel, Hom; Kajino, Tsutomu; Terazawa, Hidetaka; Takimoto, Satoshi; Watanabe, Kemmei

2017-08-01

We have developed a compact solar-pumped laser (µSPL) employing an off-axis parabolic mirror with an aperture of 76.2 mm diameter and an yttrium aluminum garnet (YAG) ceramic rod of φ1 mm × 10 mm doped with 1% Nd and 0.1% Cr as a laser medium. The laser oscillation wavelength of 1.06 µm, just below the optical absorption edge of Si cells, is suitable for photoelectric conversion with minimal thermal loss. The concept of laser beam power feeding to an electric vehicle equipped with a photovoltaic panel on the roof was proposed by Ueda in 2010, in which the electricity generated by solar panels over the road is utilized to drive a semiconductor laser located on each traffic signal along the road. By substituting this solar-electricity-driven semiconductor laser with a solar-pumped laser, the energy loss of over 50% in converting the solar electricity to a laser beam can be eliminated. The overall feasibility of this system in an urban area such as Tokyo was investigated.

Characterization of lap joints laser beam welding of thin AA 2024 sheets with Yb:YAG disk-laser

NASA Astrophysics Data System (ADS)

Caiazzo, Fabrizia; Alfieri, Vittorio; Cardaropoli, Francesco; Sergi, Vincenzo

2012-06-01

Lap joints obtained by overlapping two plates are widely diffused in aerospace industry. Nevertheless, because of natural aging, adhesively bonded and riveted aircraft lap joints may be affected by cracks from rivets, voids or corrosion. Friction stir welding has been proposed as a valid alternative, although large heat affected zones are produced both in the top and the bottom plate due to the pin diameter. Interest has therefore been shown in studying laser lap welding as the laser beam has been proved to be competitive since it allows to concentrate the thermal input and increases productivity and quality. Some challenges arise as a consequence of aluminum low absorptance and high thermal conductivity; furthermore, issues are due to metallurgical challenges such as both micro and macro porosity formation and softening in the fused zone. Welding of AA 2024 thin sheets in a lap joint configuration is discussed in this paper: tests are carried out using a recently developed Trumpf TruDisk 2002 Yb:YAG disk-laser with high beam quality which allows to produce beads with low plates distortion and better penetration. The influence of the processing parameters is discussed considering the fused zone extent and the bead shape. The porosity content as well as the morphological features of the beads have been examined.

Effect of blade-surface-roughness on the pumping performance of a turbomolecular pump

NASA Astrophysics Data System (ADS)

Sawada, T.; Yabuki, M.; Sugiyama, W.; Watanabe, M.

2005-11-01

Turbomolecular pumps (TMPs) are widely used in the semiconductor and other thin film industries. Some semiconductor processes form corrosive gases such as HCl or HF as byproducts. The elements of a TMP are sometimes coated with ceramic (SiO2) film for the purpose of preventing corrosion of the TMP. The blades coated with SiO2 have relatively rough surfaces. The effect of the surface roughness of the blades on the pumping performance has been studied experimentally and theoretically. Experimental results for TMPs with two rotor disks and one stator disk show that the TMP coated with SiO2 film gives about 11% to 13% higher maximum-compression ratio than the noncoated TMP when the blade speed ratio is 0.47. The theory based on the conic peak/dimple-surface-roughness model that has been proposed by the authors explains the change in the compression ratio with the surface roughness shown in the experiment.

Influence of Molecular Shape on the Thermal Stability and Molecular Orientation of Vapor-Deposited Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walters, Diane M; Antony, Lucas; de Pablo, Juan

High thermal stability and anisotropic molecular orientation enhance the performance of vapor-deposited organic semiconductors, but controlling these properties is a challenge in amorphous materials. To understand the influence of molecular shape on these properties, vapor-deposited glasses of three disk-shaped molecules were prepared. For all three systems, enhanced thermal stability is observed for glasses prepared over a wide range of substrate temperatures and anisotropic molecular orientation is observed at lower substrate temperatures. For two of the disk-shaped molecules, atomistic simulations of thin films were also performed and anisotropic molecular orientation was observed at the equilibrium liquid surface. We find that themore » structure and thermal stability of these vapor-deposited glasses results from high surface mobility and partial equilibration toward the structure of the equilibrium liquid surface during the deposition process. For the three molecules studied, molecular shape is a dominant factor in determining the anisotropy of vapor-deposited glasses.« less

Lasers '92; Proceedings of the International Conference on Lasers and Applications, 15th, Houston, TX, Dec. 7-10, 1992

NASA Technical Reports Server (NTRS)

Wang, Charles P. (Editor)

1993-01-01

Papers from the conference are presented, and the topics covered include the following: x-ray lasers, excimer lasers, chemical lasers, high power lasers, blue-green lasers, dye lasers, solid state lasers, semiconductor lasers, gas and discharge lasers, carbon dioxide lasers, ultrafast phenomena, nonlinear optics, quantum optics, dynamic gratings and wave mixing, laser radar, lasers in medicine, optical filters and laser communication, optical techniques and instruments, laser material interaction, and industrial and manufacturing applications.

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level

NASA Astrophysics Data System (ADS)

Garnache, Arnaud; Myara, Mikhaël.; Laurain, A.; Bouchier, Aude; Perez, J. P.; Signoret, P.; Sagnes, I.; Romanini, D.

2017-11-01

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

Analysis of the effects of periodic forcing in the spike rate and spike correlation's in semiconductor lasers with optical feedback

NASA Astrophysics Data System (ADS)

Quintero-Quiroz, C.; Sorrentino, Taciano; Torrent, M. C.; Masoller, Cristina

2016-04-01

We study the dynamics of semiconductor lasers with optical feedback and direct current modulation, operating in the regime of low frequency fluctuations (LFFs). In the LFF regime the laser intensity displays abrupt spikes: the intensity drops to zero and then gradually recovers. We focus on the inter-spike-intervals (ISIs) and use a method of symbolic time-series analysis, which is based on computing the probabilities of symbolic patterns. We show that the variation of the probabilities of the symbols with the modulation frequency and with the intrinsic spike rate of the laser allows to identify different regimes of noisy locking. Simulations of the Lang-Kobayashi model are in good qualitative agreement with experimental observations.

Effects of laser acupoint irradiation on blood glucose and glycosylated hemoglobin in type 2 diabetes mellitus

NASA Astrophysics Data System (ADS)

Hui-Hui, Liu; Guo-Xin, Xiong; Li-Ping, Zhang

2016-06-01

To investigate the effects of semiconductor laser acupoint irradiation on blood glucose, glycosylated hemoglobin and physical fitness in type 2 diabetes mellitus, 44 cases of type 2 diabetic patients were randomly divided into a control group and a treatment group. All patients in both groups were given a drug treatment. The Hegu, Quchi and Zusanli acupoints of patients in the treatment group were then irradiated daily for 15 d with a 10 MW semiconductor laser. Before and after treatment, patients in both groups underwent a variety of tests and measurements: a two-hour postprandial blood glucose test; a glycosylated hemoglobin test and body mass index (BMI), waist-to-hip ratio (WHR) and body fat percentage (BFP) measurements. The data detected after treatment greatly decreased in the treatment group and was significantly different from that in the control group. It is shown that the acupoint irradiation with a semiconductor laser can improve two-hour postprandial blood glucose, glycosylated hemoglobin and some physical fitness measurements in type 2 diabetes mellitus patients.

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Vapor phase growth technique of III-V compounds utilizing a preheating step

NASA Technical Reports Server (NTRS)

Olsen, Gregory Hammond (Inventor); Zamerowski, Thomas Joseph (Inventor); Buiocchi, Charles Joseph (Inventor)

1978-01-01

In the vapor phase epitaxy fabrication of semiconductor devices and in particular semiconductor lasers, the deposition body on which a particular layer of the laser is to be grown is preheated to a temperature about 40.degree. to 60.degree. C. lower than the temperature at which deposition occurs. It has been discovered that by preheating at this lower temperature there is reduced thermal decomposition at the deposition surface, especially for semiconductor materials such as indium gallium phosphide and gallium arsenide phosphide. A reduction in thermal decomposition reduces imperfections in the deposition body in the vicinity of the deposition surface, thereby providing a device with higher efficiency and longer lifetime.

Low threshold diode-pumped picosecond mode-locked Nd:YAG laser with a semiconductor saturable absorber mirror

NASA Astrophysics Data System (ADS)

Eshghi, M. J.; Majdabadi, A.; Koohian, A.

2017-01-01

In this paper, a low threshold diode pumped passively mode-locked Nd:YAG laser has been demonstrated by using a semiconductor saturable absorber mirror. The threshold power for continuous-wave mode-locking is relatively low, about 3.2 W. The resonator stability across the pump power has been analytically examined. Moreover, the mode overlap between the pump beam and the laser fundamental mode has been simulated by MATLAB software. Adopting Z-shaped resonator configuration and suitable design of the resonator’s arm lengths, has enabled the author to prepare mode-locking conditions, and obtain 40 ps pulses with 112 MHz pulse repetition rate. The laser output was stable without any Q switched instability. To the best of our knowledge, this is the lowest threshold for CW mode-locking operation of a Nd:YAG laser.

Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)

2002-01-01

The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

Optical Digital Disk Storage: An Application for News Libraries.

ERIC Educational Resources Information Center

Crowley, Mary Jo

1988-01-01

Describes the technology, equipment, and procedures necessary for converting a historical newspaper clipping collection to optical disk storage. Alternative storage systems--microforms, laser scanners, optical storage--are also retrieved, and the advantages and disadvantages of optical storage are considered. (MES)

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Semiconductor-laser Fourier processors of electric signals

NASA Astrophysics Data System (ADS)

Blok, A. S.; Bukhenskii, A. F.; Krupitskii, É. I.; Morozov, S. V.; Pelevin, V. Yu; Sergeenko, T. N.; Yakovlev, V. I.

1995-10-01

An investigation is reported of acousto-optical and fibre-optic Fourier processors of electric signals, based on semiconductor lasers. A description is given of practical acousto-optical processors with an analysis band 120 MHz wide, a resolution of 200 kHz, and 7 cm × 8 cm × 18 cm dimensions. Fibre-optic Fourier processors are considered: they represent a new class of devices which are promising for the processing of gigahertz signals.

Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator

DTIC Science & Technology

2008-03-01

then used to fit theoretical models describing radiative and non-radiative relaxation processes. 3.2 Experimental Setup This thesis uses a mode...Russian Efforts. Master’s thesis, Naval Postgraduate School, 2005. 5. Chirsto, Farid C. “Thermochemistry and Kinetics Models for MagnesiumTe- flon/Viton...Coherent Mira Model 900-F Laser. 7. Cooley, William T. Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material

Bibliography of Soviet Laser Developments, Number 66, July-August 1983.

DTIC Science & Technology

1984-09-01

7 5. Glass : Nd............................................8 6. Glass : Er............................................9 7. Glass ...upper lasing level of neodymium in y-La2S 3 semiconductor crystals and _a2S_ 2Ga20 3 glass . KE, no. 8, 1983, 1560-1564. 7. Kaminskiy, A.A., N.R. Agamalyan...injection semiconductor lasers. FTP, no. 7, 1983, 1353-1355. 5. Glass : Nd 44. Gvatua, Sh.Sh., Z.V. Katselashvili, V.N. Polukhin, S.N. Popov, T.V. Prangishvili

Laser-processing of VO2 thin films synthesized by polymer-assisted-deposition

NASA Astrophysics Data System (ADS)

Breckenfeld, Eric; Kim, Heungsoo; Gorzkowski, Edward P.; Sutto, Thomas E.; Piqué, Alberto

2017-03-01

We investigate a novel route for synthesis and laser-sintering of VO2 thin films via solution-based polymer-assisted-deposition (PAD). By replacing the traditional solvent for PAD (water) with propylene glycol, we are able to control the viscosity and improve the environmental stability of the precursor. The solution stability and ability to control the viscosity makes for an ideal solution to pattern simple or complex shapes via direct-write methods. We demonstrate the potential of our precursor for printing applications by combining PAD with laser induced forward transfer (LIFT). We also demonstrate large-area film synthesis on 4 in. diameter glass wafers. By varying the annealing temperature, we identify the optimal synthesis conditions, obtaining optical transmittance changes of 60% at a 2500 nm wavelength and a two-order-of-magnitude semiconductor-to-metal transition. We go on to demonstrate two routes for improved semiconductor-to-metal characteristics. The first method uses a multi-coating process to produce denser films with large particles. The second method uses a pulsed-UV-laser sintering step in films annealed at low temperatures (<450° C) to promote particle growth and improve the semiconductor-to-metal transition. By comparing the hysteresis width and semiconductor-to-metal transition magnitude in these samples, we demonstrate that both methods yield high quality VO2 with a three-order-of-magnitude transition.

Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors.

PubMed

Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A

2015-02-01

Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation. Copyright © 2014 Elsevier B.V. All rights reserved.

Laser Vacuum Furnace for Zone Refining

NASA Technical Reports Server (NTRS)

Griner, D. B.; Zurburg, F. W.; Penn, W. M.

1986-01-01

Laser beam scanned to produce moving melt zone. Experimental laser vacuum furnace scans crystalline wafer with high-power CO2-laser beam to generate precise melt zone with precise control of temperature gradients around zone. Intended for zone refining of silicon or other semiconductors in low gravity, apparatus used in normal gravity.

Wurtzite spin lasers

NASA Astrophysics Data System (ADS)

Faria Junior, Paulo E.; Xu, Gaofeng; Chen, Yang-Fang; Sipahi, Guilherme M.; Žutić, Igor

2017-03-01

Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin lasers could overcome many limitations of their conventional (spin-unpolarized) counterparts. While the vast majority of experiments in spin lasers employed zinc-blende semiconductors, the room-temperature electrical manipulation was first demonstrated in wurtzite GaN-based lasers. However, the underlying theoretical description of wurtzite spin lasers is still missing. To address this situation, focusing on (In,Ga)N-based wurtzite quantum wells, we develop a theoretical framework in which the calculated microscopic spin-dependent gain is combined with a simple rate equation model. A small spin-orbit coupling in these wurtzites supports simultaneous spin polarizations of electrons and holes, providing unexplored opportunities to control spin lasers. For example, the gain asymmetry, as one of the key figures of merit related to spin amplification, can change the sign by simply increasing the carrier density. The lasing threshold reduction has a nonmonotonic dependence on electron-spin polarization, even for a nonvanishing hole spin polarization.

Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers.

PubMed

Eigenwillig, Christoph M; Wieser, Wolfgang; Todor, Sebastian; Biedermann, Benjamin R; Klein, Thomas; Jirauschek, Christian; Huber, Robert

2013-01-01

Ultrafast lasers have a crucial function in many fields of science; however, up to now, high-energy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of ~60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

Picosecond pulses from wavelength-swept continuous-wave Fourier domain mode-locked lasers

NASA Astrophysics Data System (ADS)

Eigenwillig, Christoph M.; Wieser, Wolfgang; Todor, Sebastian; Biedermann, Benjamin R.; Klein, Thomas; Jirauschek, Christian; Huber, Robert

2013-05-01

Ultrafast lasers have a crucial function in many fields of science; however, up to now, high-energy pulses directly from compact, efficient and low-power semiconductor lasers are not available. Therefore, we introduce a new approach based on temporal compression of the continuous-wave, wavelength-swept output of Fourier domain mode-locked lasers, where a narrowband optical filter is tuned synchronously to the round-trip time of light in a kilometre-long laser cavity. So far, these rapidly swept lasers enabled orders-of-magnitude speed increase in optical coherence tomography. Here we report on the generation of ~60-70 ps pulses at 390 kHz repetition rate. As energy is stored optically in the long-fibre delay line and not as population inversion in the laser-gain medium, high-energy pulses can now be generated directly from a low-power, compact semiconductor-based oscillator. Our theory predicts subpicosecond pulses with this new technique in the future.

Ultrashort, high power, and ultralow noise mode-locked optical pulse generation using quantum-dot semiconductor lasers

NASA Astrophysics Data System (ADS)

Choi, Myoung-Taek

This dissertation explores various aspects and potential of optical pulse generation based on active, passive, and hybrid mode-locked quantum dot semiconductor lasers with target applications such as optical interconnect and high speed signal processing. Design guidelines are developed for the single mode operation with suppressed reflection from waveguide discontinuities. The device fabrication procedure is explained, followed by characteristics of FP laser, SOA, and monolithic two-section devices. Short pulse generation from an external cavity mode-locked QD two-section diode laser is studied. High quality, sub-picosecond (960 fs), high peak power (1.2 W) pulse trains are obtained. The sign and magnitude of pulse chirp were measured for the first time. The role of the self-phase modulation and the linewidth enhancement factor in QD mode-locked lasers is addressed. The noise performance of two-section mode-locked lasers and a SOA-based ring laser was investigated. Significant reduction of the timing jitter under hybrid mode-locked operation was achieved owing to more than one order of magnitude reduction of the linewidth in QD gain media. Ultralow phase noise performance (integrated timing jitter of a few fs at a 10 GHz repetition rate) was demonstrated from an actively mode-locked unidirectional ring laser. These results show that quantum dot mode-locked lasers are strong competitors to conventional semiconductor lasers in noise performance. Finally we demonstrated an opto-electronic oscillator (OEO) and coupled opto-electronic oscillators (COEO) which have the potential for both high purity microwave and low noise optical pulse generation. The phase noise of the COEO is measured by the photonic delay line frequency discriminator method. Based on this study we discuss the prospects of the COEO as a low noise optical pulse source.

Methods to increase efficiency of laser therapy of oncologic diseases: methods, equipment, experiment

NASA Astrophysics Data System (ADS)

Mikov, A. A.; Svirin, V. N.

2008-04-01

The rapid development of quantum electronics and the advent of various types of lasers favored the formation of an independent line in medicine, namely, laser medicine In recent years devices based on semiconductor lasers have been introduced into medicine at a most rapid pace At present day this is connected with , that the essential improvement energy and spectral features has occurred in development semiconductor laser. The power of serial discrete near-IR semiconductor lasers has reached a level of 5 W and more, the spectral range has extended to 1.7...1.8 μm. Laser-optical information technologies and devices develop since the 70- years at the end of 20 century and are broadly used for treatment of oncologic diseases. Although such methods as photodynamic therapy (PDT), laser-induce thermotherapy (LITT), fluorescent diagnostics and spectrophotometry already more than 30 years are used for treatment and diagnostics of oncologic diseases, nevertheless, they are enough new methods and, as a rule, are used in large scientific centers and medical institutions. This is bound, first of all, with lack of information on modern method of cancer treatment, the absence of widely available laser procedures and corresponding devices in the polyclinics and even in district hospitals, as well as insufficient understanding of application areas, where laser methods has an advantage by comparison, for instance, with beam or chemotherapy. Presented in the article are new developed methods and results of designing equipment and software for their realization aimed at increase in efficiency of treatment of oncologic diseases as well as several clinical materials of the use of industrial models of the developed devices at medical institutions.

ARTICLES: Nonlinear interaction of infrared waves on a VO2 surface at a semiconductor-metal phase transition

NASA Astrophysics Data System (ADS)

Berger, N. K.; Zhukov, E. A.; Novokhatskiĭ, V. V.

1984-04-01

The use of a semiconductor-metal phase transition for wavefront reversal of laser radiation was proposed. An investigation was made of nonlinear reflection of CO2 laser radiation at a phase transition in VO2. A three-wave interaction on a VO2 surface was achieved using low-power cw and pulsed CO2 lasers. In the first case, the intensity reflection coefficient was 0.5% for a reference wave intensity of 0.9 W/cm2 and in the second case, it was 42% for a threshold reference wave energy density of 0.6-0.8 mJ/cm2.

Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

NASA Astrophysics Data System (ADS)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-05-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

White random lasing in mixture of ZnSe, CdS and CdSSe micropowders

NASA Astrophysics Data System (ADS)

Alyamani, A. Y.; Leanenia, M. S.; Alanazi, L. M.; Aljohani, M. M.; Aljariwi, A. A.; Rzheutski, M. V.; Lutsenko, E. V.; Yablonskii, G. P.

2016-03-01

Room temperature random lasing with white light emission in a mixture of AIIBVI semiconductor powders was achieved for the first time. The scattering gain media was formed by the mixture of closely packed active micron sized crystallites of ZnSe, CdS, CdSSe semiconductors. The micropowders were produced by grinding bulk crystals of each compound. Optical excitation was performed by 10-nanosecond pulses of tuned Ti:Al2O3-laser at 390 nm. The lasing in the mixture of semiconductor powders was achieved simultaneously at four wavelengths in blue, green, yellow and red spectral regions after exceeding the threshold excitation power density. A drastic integral intensity increase, spectrum narrowing and appearance of mode structure accompanied the laser action. ZnSe crystallites produce the laser light at about 460 nm while CdS particles - at about 520 nm. Two types of CdSSe semiconductor micropowders with different sulfur content lase at 580 nm and 660 nm. The threshold excitation power densities for all laser lines in the emission spectrum are approximately the same of about 0.9 MW/cm2. The sum of the emission spectrum of the mixture of the micropowders forms white light with high brightness. Lasing is due to an appearance of random feedback for amplified radiation in the active medium of closely packed light scattering crystallites. The presented results may find their applications for visualization systems, lighting technology, data transmission, medicine as biosensors and in identification systems. The key feature of random lasers is low cost of its production and possibility to be deposited on any type of surface.

Remembering the laser diode

NASA Astrophysics Data System (ADS)

2012-12-01

Fifty years ago, researchers at a handful of laboratories around the world were reporting lasing from the first semiconductor lasers. Our IT infrastructure today relies on their diligence and success.

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

NASA Astrophysics Data System (ADS)

Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

2018-06-01

Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

DIFFRACTION SYNCHRONIZATION OF LASERS,

DTIC Science & Technology

semiconductor lasers while suppressing parasitic generation in the plane of the mirror. The diffraction coupling coefficient of open resonators is calculated, and the stability conditions of the synchronized system is determined.

Effects of low intensity laser acupoint irradiation on inhibiting islet beta-cell apoptosis in rats with type 2 diabetes

NASA Astrophysics Data System (ADS)

Xiong, Guoxin; Xiong, Leilei; Li, Xinzhong

2016-09-01

To investigate the effects of low intensity semiconductor laser acupoint irradiation on inhibiting islet beta-cell apoptosis in rats with type 2 diabetes, a method using a high-fat diet and low-dose intraperitoneal injections of streptozotocin established a type 2 diabetes mellitus rat model. Model rats were randomly divided into a laser acupoint irradiation group, rosiglitazone control group, and placebo group; each group had 10 rats. In addition, 10 normal male rats were selected for the normal control group. The Housanli, Neiting and Yishu acupoints of the rats in the laser acupoint irradiation group were irradiated with a 10 mW semiconductor laser; each point was irradiated for 15 min, once every 2 d over 28 d, for a total of 14 episodes of irradiation. The rosiglitazone group rats were given rosiglitazone (0.2 mg kg-1) intragastrically; the placebo group rats were given 0.9% brine (0.2 mg kg-1) intragastrically, once daily, for four consecutive weeks. The change of fasting blood glucose was determined before and after each treatment. The islet beta-cell apoptosis was determined. The islet beta-cell apoptosis rates of the laser acupoint irradiation group and the rosiglitazone group were significantly lower than the rate of the placebo group. Even though the rate was lower in the laser acupoint irradiation group than in the rosiglitazone group, there was no significant difference between them. It is shown that acupoint irradiation with a semiconductor laser can effectively inhibit islet beta-cell apoptosis in rats with type 2 diabetes.

Efficient dynamic coherence transfer relying on offset locking using optical phase-locked loop

NASA Astrophysics Data System (ADS)

Xie, Weilin; Dong, Yi; Bretenaker, Fabien; Shi, Hongxiao; Zhou, Qian; Xia, Zongyang; Qin, Jie; Zhang, Lin; Lin, Xi; Hu, Weisheng

2018-01-01

We design and experimentally demonstrate a highly efficient coherence transfer based on composite optical phaselocked loop comprising multiple feedback servo loops. The heterodyne offset-locking is achieved by conducting an acousto-optic frequency shifter in combination with the current tuning and the temperature controlling of the semiconductor laser. The adaptation of the composite optical phase-locked loop enables the tight coherence transfer from a frequency comb to a semiconductor laser in a fully dynamic manner.

Bidirectional private key exchange using delay-coupled semiconductor lasers.

PubMed

Porte, Xavier; Soriano, Miguel C; Brunner, Daniel; Fischer, Ingo

2016-06-15

We experimentally demonstrate a key exchange cryptosystem based on the phenomenon of identical chaos synchronization. In our protocol, the private key is symmetrically generated by the two communicating partners. It is built up from the synchronized bits occurring between two current-modulated bidirectionally coupled semiconductor lasers with additional self-feedback. We analyze the security of the exchanged key and discuss the amplification of its privacy. We demonstrate private key generation rates up to 11  Mbit/s over a public channel.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Method for calculation of electrical and optical properties of laser active media

NASA Astrophysics Data System (ADS)

Aleksandrov, D. G.; Filipov, F. I.

1988-11-01

A method is proposed for calculation of the electron band structure of multicomponent semiconductor solid solutions. Use is made of virtual atomic orbitals formed from real orbitals. The method represents essentially an approximation of a multicomponent solid solution by a binary one. The matrix elements of the Hamiltonian are obtained in the methods of linear combinations of atomic and bound orbitals. Some approximations used in these methods are described.

Optic probe for semiconductor characterization

DOEpatents

Sopori, Bhushan L [Denver, CO; Hambarian, Artak [Yerevan, AM

2008-09-02

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

Teach students Semiconductor Lasers according to their natural ability

NASA Astrophysics Data System (ADS)

Liu, Ken; Guo, Chu Cai; Zhang, Jian Fa

2017-08-01

Physics explain the world in strict rules. And with these rules, modern machines and electronic devices with exact operation manner have been developed. However, human beings exceed these machines with self-awareness. To treat these self-awareness students as machines to learn strict rules, or to teach these students according to their aptitude? We choose the latter, because the first kind of teaching would let students lose their individual thoughts and natural ability. In this paper we describe the individualized teaching of "semiconductor lasers".

Model of an Injection Semiconductor Quantum-Dot Laser

NASA Astrophysics Data System (ADS)

Koryukin, I. V.

2018-05-01

We propose an asymmetric electron-hole model of an injection semiconductor quantum-dot laser, which correctly allows for relaxation at transitions between the electron and hole levels. Steady-state solutions of the proposed model, conditions for the simultaneous operation at transitions between the ground and first excited state levels, and relaxation oscillations in the two-wave lasing regime are studied. It is shown that the model can be simplified when the relaxation between hole levels is much faster than the relaxation between electron levels.

Frequency-noise cancellation in semiconductor lasers by nonlinear heterodyne detection.

PubMed

Bondurant, R S; Welford, D; Alexander, S B; Chan, V W

1986-12-01

The bit-error-rate (BER) performance of conventional noncoherent, heterodyne frequency-shift-keyed (FSK) optical communications systems can be surpassed by the use of a differential FSK modulation format and nonlinear postdetection processing at the receiver. A BER floor exists for conventional frequency-shift keying because of the frequency noise of the transmitter and local oscillator. The use of differential frequency-shift keying with nonlinear postdetection processing suppresses this BER floor for the semiconductor laser system considered here.

III-V/II-VI Hybrid Quantum Well Mid-Infrared Lasers

DTIC Science & Technology

2005-01-25

semiconductor lasers are of great importance for many applications such as laser diode spectroscopy , pollution monitoring, low-loss optical communication...great importance for many applications such as laser diode spectroscopy, pollutant monitoring, low-losses longwavelength optical communication...InAsSb/CdMgSe laser structure 1.2. Characterization of the laser structures and interface quality (STM, EPFM etc) 1.3. Study of spontaneous and

Ultra-fast movies of thin-film laser ablation

NASA Astrophysics Data System (ADS)

Domke, Matthias; Rapp, Stephan; Schmidt, Michael; Huber, Heinz P.

2012-11-01

Ultra-short-pulse laser irradiation of thin molybdenum films from the glass substrate side initiates an intact Mo disk lift off free from thermal effects. For the investigation of the underlying physical effects, ultra-fast pump-probe microscopy is used to produce stop-motion movies of the single-pulse ablation process, initiated by a 660-fs laser pulse. The ultra-fast dynamics in the femtosecond and picosecond ranges are captured by stroboscopic illumination of the sample with an optically delayed probe pulse of 510-fs duration. The nanosecond and microsecond delay ranges of the probe pulse are covered by an electronically triggered 600-ps laser. Thus, the setup enables an observation of general laser ablation processes from the femtosecond delay range up to the final state. A comparison of time- and space-resolved observations of film and glass substrate side irradiation of a 470-nm molybdenum layer reveals the driving mechanisms of the Mo disk lift off initiated by glass-side irradiation. Observations suggest that a phase explosion generates a liquid-gas mixture in the molybdenum/glass interface about 10 ps after the impact of the pump laser pulse. Then, a shock wave and gas expansion cause the molybdenum layer to bulge, while the enclosed liquid-gas mixture cools and condenses at delay times in the 100-ps range. The bulging continues for approximately 20 ns, when an intact Mo disk shears and lifts off at a velocity of above 70 m/s. As a result, the remaining hole is free from thermal effects.

Narrow line width dual wavelength semiconductor optical amplifier based random fiber laser

NASA Astrophysics Data System (ADS)

Shawki, Heba A.; Kotb, Hussein E.; Khalil, Diaa

2018-02-01

A novel narrow line-width Single longitudinal mode (SLM) dual wavelength random fiber laser of 20 nm separation between wavelengths of 1530 and 1550 nm is presented. The laser is based on Rayleigh backscattering in a standard single mode fiber of 2 Km length as distributed mirrors, and a semiconductor optical amplifier (SOA) as the optical amplification medium. Two optical bandpass filters are used for the two wavelengths selectivity, and two Faraday Rotator mirrors are used to stabilize the two lasing wavelengths against fiber random birefringence. The optical signal to noise ratio (OSNR) was measured to be 38 dB. The line-width of the laser was measured to be 13.3 and 14 KHz at 1530 and 1550 nm respectively, at SOA pump current of 370 mA.

Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

DOEpatents

Horn, Kevin M [Albuquerque, NM

2008-05-20

A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

78 FR 51737 - Notice of Issuance of Final Determination Concerning Certain Hard Disk Drives and Self-Encrypting...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-21

... the HDA incorporate semiconductor, magnetic, mechanical, and manufacturing process design into an..., mechanical surface design and manufacturing process design. It takes approximately [xxx] hours to design... brand names ``Barracuda'' and ``Desktop''. HDDs are designed in the United States and assembled either...

Ultrafast disk technology enables next generation micromachining laser sources

NASA Astrophysics Data System (ADS)

Heckl, Oliver H.; Weiler, Sascha; Luzius, Severin; Zawischa, Ivo; Sutter, Dirk

2013-02-01

Ultrashort pulsed lasers based on thin disk technology have entered the 100 W regime and deliver several tens of MW peak power without chirped pulse amplification. Highest uptime and insensitivity to back reflections make them ideal tools for efficient and cost effective industrial micromachining. Frequency converted versions allow the processing of a large variety of materials. On one hand, thin disk oscillators deliver more than 30 MW peak power directly out of the resonator in laboratory setups. These peak power levels are made possible by recent progress in the scaling of the pulse energy in excess of 40 μJ. At the corresponding high peak intensity, thin disk technology profits from the limited amount of material and hence the manageable nonlinearity within the resonator. Using new broadband host materials like for example the sesquioxides will eventually reduce the pulse duration during high power operation and further increase the peak power. On the other hand industry grade amplifier systems deliver even higher peak power levels. At closed-loop controlled 100W, the TruMicro Series 5000 currently offers the highest average ultrafast power in an industry proven product, and enables efficient micromachining of almost any material, in particular of glasses, ceramics or sapphire. Conventional laser cutting of these materials often requires UV laser sources with pulse durations of several nanoseconds and an average power in the 10 W range. Material processing based on high peak power laser sources makes use of multi-photon absorption processes. This highly nonlinear absorption enables micromachining driven by the fundamental (1030 nm) or frequency doubled (515 nm) wavelength of Yb:YAG. Operation in the IR or green spectral range reduces the complexity and running costs of industrial systems initially based on UV light sources. Where UV wavelength is required, the TruMicro 5360 with a specified UV crystal life-time of more than 10 thousand hours of continues operation at 15W is an excellent choice. Currently this is the world's most powerful industrial sub-10 ps UV laser.

Stress Measurement by Geometrical Optics

NASA Technical Reports Server (NTRS)

Robinson, R. S.; Rossnagel, S. M.

1986-01-01

Fast, simple technique measures stresses in thin films. Sample disk bowed by stress into approximately spherical shape. Reflected image of disk magnified by amount related to curvature and, therefore, stress. Method requires sample substrate, such as cheap microscope cover slide, two mirrors, laser light beam, and screen.

Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Giriraj, E-mail: grsharma@gmail.com; Dad, R. C.; Ghosh, S.

2015-07-31

A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantlymore » raised and the threshold pump field for the onset of SBS process is lowered.« less

Cascade laser applications: trends and challenges

NASA Astrophysics Data System (ADS)

d'Humières, B.; Margoto, Éric; Fazilleau, Yves

2016-03-01

When analyses need rapid measurements, cost effective monitoring and miniaturization, tunable semiconductor lasers can be very good sources. Indeed, applications like on-field environmental gas analysis or in-line industrial process control are becoming available thanks to the advantage of tunable semiconductor lasers. Advances in cascade lasers (CL) are revolutionizing Mid-IR spectroscopy with two alternatives: interband cascade lasers (ICL) in the 3-6μm spectrum and quantum cascade lasers (QCL), with more power from 3 to 300μm. The market is getting mature with strong players for driving applications like industry, environment, life science or transports. CL are not the only Mid-IR laser source. In fact, a strong competition is now taking place with other technologies like: OPO, VCSEL, Solid State lasers, Gas, SC Infrared or fiber lasers. In other words, CL have to conquer a share of the Mid-IR application market. Our study is a market analysis of CL technologies and their applications. It shows that improvements of components performance, along with the progress of infrared laser spectroscopy will drive the CL market growth. We compare CL technologies with other Mid-IR sources and estimate their share in each application market.

PHOTONICS AND NANOTECHNOLOGY Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation

NASA Astrophysics Data System (ADS)

Bulgakov, A. V.; Evtushenko, A. B.; Shukhov, Yu G.; Ozerov, I.; Marin, W.

2010-12-01

Formation of small clusters during pulsed ablation of two binary semiconductors, zinc oxide and indium phosphide, in vacuum by UV, visible, and IR laser radiation is comparatively studied. The irradiation conditions favourable for generation of neutral and charged ZnnOm and InnPm clusters of different stoichiometry in the ablation products are found. The size and composition of the clusters, their expansion dynamics and reactivity are analysed by time-of-flight mass spectrometry. A particular attention is paid to the mechanisms of ZnO and InP ablation as a function of laser fluence, with the use of different ablation models. It is established that ZnO evapourates congruently in a wide range of irradiation conditions, while InP ablation leads to enrichment of the target surface with indium. It is shown that this radically different character of semiconductor ablation determines the composition of the nanostructures formed: zinc oxide clusters are mainly stoichiometric, whereas InnPm particles are significantly enriched with indium.

Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

NASA Astrophysics Data System (ADS)

Wang, M.; Huang, Y. J.; Ruan, S. C.

2018-04-01

In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

Applications of ions produced by low intensity repetitive laser pulses for implantation into semiconductor materials

NASA Astrophysics Data System (ADS)

Wołowski, J.; Badziak, J.; Czarnecka, A.; Parys, P.; Pisarek, M.; Rosinski, M.; Turan, R.; Yerci, S.

This work reports experiment concerning specific applications of implantation of laser-produced ions for production of semiconductor nanocrystals. The investigation was carried out in the IPPLM within the EC STREP `SEMINANO' project. A repetitive pulse laser system of parameters: energy up to 0.8 J in a 3.5 ns-pulse, wavelength of 1.06 μ m, repetition rate of up to 10 Hz, has been employed in these investigations. The characterisation of laser-produced ions was performed with the use of `time-of-flight' ion diagnostics simultaneously with other diagnostic methods in dependence on laser pulse parameters, illumination geometry and target material. The properties of laser-implanted and modified SiO2 layers on sample surface were characterised with the use of different methods (XPS + ASD, Raman spectroscopy, PL spectroscopy) at the Middle East Technological University in Ankara and at the Warsaw University of Technology. The production of the Ge nanocrystallites has been demonstrated for annealed samples prepared in different experimental conditions.

Monolithic integration of microfluidic channels and semiconductor lasers.

PubMed

Cran-McGreehin, Simon J; Dholakia, Kishan; Krauss, Thomas F

2006-08-21

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Monolithic integration of microfluidic channels and semiconductor lasers

NASA Astrophysics Data System (ADS)

Cran-McGreehin, Simon J.; Dholakia, Kishan; Krauss, Thomas F.

2006-08-01

We present a fabrication method for the monolithic integration of microfluidic channels into semiconductor laser material. Lasers are designed to couple directly into the microfluidic channel, allowing submerged particles pass through the output beams of the lasers. The interaction between particles in the channel and the lasers, operated in either forward or reverse bias, allows for particle detection, and the optical forces can be used to trap and move particles. Both interrogation and manipulation are made more amenable for lab-on-a-chip applications through monolithic integration. The devices are very small, they require no external optical components, have perfect intrinsic alignment, and can be created with virtually any planar configuration of lasers in order to perform a variety of tasks. Their operation requires no optical expertise and only low electrical power, thus making them suitable for computer interfacing and automation. Insulating the pn junctions from the fluid is the key challenge, which is overcome by using photo-definable SU8-2000 polymer.

Rapid disinfection of E-Coliform contaminated water using WO3 semiconductor catalyst by laser-induced photo-catalytic process.

PubMed

Gondal, Mohammed A; Khalil, Amjad

2008-04-01

Laser-induced photo-catalysis process using WO(3) semiconductor catalyst was applied for the study of disinfection effectiveness of E-coliform-contaminated water. For this purpose, wastewater polluted with E-coliform bacteria was exposed to 355 nm UV radiations generated by third harmonic of Nd: YAG laser in special glass cell with and without WO(3) catalyst. E-Coliform quantification was performed by direct plating method to obtain the efficiency of each disinfection treatment. The dependence of disinfection process on laser irradiation energy, amount of catalyst and duration of laser irradiation was also investigated. The disinfection with WO(3) was quite efficient inactivating E-coliforms. For inactivation of E-coliforms, less than 8 minutes' laser irradiation was required, so that, the treated water complies with the microbial standards for drinking water. This study opens the possibility of application of this simple method in rural areas of developing countries using solar radiation.

High Current, Multi-Filament Photoconductive Semiconductor Switching

DTIC Science & Technology

2011-06-01

linear PCSS triggered with a 100 fs laser pulse . Figure 1. A generic photoconductive semiconductor switch rapidly discharges a charged capacitor...switching is the most critical challenge remaining for photoconductive semiconductor switch (PCSS) applications in Pulsed Power. Many authors have...isolation and control, pulsed or DC charging, and long device lifetime, provided the current per filament is limited to 20-30A for short pulse (10

Passive Q-switching of ˜2.7 µm Er:Lu2O3 ceramic laser with a semiconductor saturable absorber mirror

NASA Astrophysics Data System (ADS)

Ren, Xiaojing; Shen, Deyuan; Zhang, Jian; Tang, Dingyuan

2018-02-01

We demonstrate the passively Q-switched operation of an Er:Lu2O3 ceramic laser at ˜2.7 µm for the first time, to the best of our knowledge. By using a semiconductor saturable absorber mirror (SESAM), stable pulse trains with a repetition rate of 20-33.3 kHz are produced in a compacted v-shaped resonator. The pulse duration (FWHM), pulse energy, and peak power are 660 ns, 1.8 µJ, and ˜2.73 W, respectively, at 33.3 kHz repetition rate. Prospects for further improvements in terms of laser performances are discussed.

Material For Self-Q-Switching Mirrors For Solid State Laser (MSMSSL)

NASA Astrophysics Data System (ADS)

Wolf, L.; Walocha, J.; Drobnik, A.

1983-09-01

Vanadium dioxide (V02) film exhibits semiconductor-to-metal transition at temperature, Tt near 340 K. The transition is accompanied by changes in optical transmission and relection. In this paper the reflected light spectra were experimentally determined at the two temperatures below and above Tt (300 and 360 K) using film thickness as the parameter. Then we calculated the ratio, Kλ , of reflection coefficient, Rm, in metallic phase to reflection coefficient, Rsc, in semiconductor phase. The film for which the maximum Kλ was observed at λ =1.06μm applied as a mirror in Nd:glass laser. The laser generated giant pulse with duration time at about 50 ns.

Ultrafast gating of a mid-infrared laser pulse by a sub-pC relativistic electron beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cesar, D. B.; Musumeci, P.; Alesini, D.

In this paper we discuss a relative time-of-arrival measurement scheme between an electron beam and a mid-infrared laser pulse based on the electron-beam controlled transmission in semiconductor materials. This technique can be used as a time-stamping diagnostic in ultrafast electron diffraction or microscopy. In particular, our characterization of Germanium demonstrates that sub-ps time-of-arrival sensitivity could be achieved in a single shot and with very low charge beams (<1 pC). Detailed measurements as a function of the beam charge and the laser wavelength offer insights on the free carrier dynamics in the semiconductor upon excitation by the electron beam.

EDITORIAL: A tribute to Zhores Ivanovitch Alferov, a pioneer who changed our way of daily life A tribute to Zhores Ivanovitch Alferov, a pioneer who changed our way of daily life

NASA Astrophysics Data System (ADS)

Bimberg, Dieter

2011-01-01

Can you think of living without the World Wide Web, e-mail, DVDs, CD-ROMs, the bar code scanner, mobile phones or high-efficiency solar cells? I cannot. These systems are part of the backbone of our modern civilization. And they have something in common: they are all devices based on the double heterostructure. Zhores Alferov (and independently Herbert Krömer) proposed its concept and its usefulness for semiconductor lasers in 1962, two years after the first demonstration of the first (solid-state) laser. InP-based double heterostructure lasers are today, and have been for more than 20 years, the enabling light sources for optical fiber communication, sending their photonic bits around the globe at enormous and ever-increasing rates. In 2009, 61% of the 500+ billion world market for laser systems was based on semiconductor lasers. Obviously a straightforward success story? Not really at the beginning, rather the kind of survival story of somebody who was producing an enormous number of ideas and trying to make them reality; his production of ideas has not yet stopped after 60 years of professional life. Let's have a look back at how it started. Zhores Alferov was born 80 years ago on 15 March 1930 in Vitebsk in eastern Byelorussia, an area where 47 years before him the famous painter Marc Chagall had been born. His parents believed in socialism and named him after the French socialist Jean Jaurès, the author of J'accuse. The war came when he was an adolescent and his admired older and only brother was killed in 1944 at the battle of Stalingrad. Despite the turmoil of war and post-war times he finished school successfully on time, was admitted to the V I Uljanov Electrotechnical Institute in Leningrad, studied physics and graduated there in 1952. In 1953 he started work at the Physico-Technical Institute in Leningrad, founded by Abraham Ioffe, the first PhD student of Conrad Rèntgen in Munich. Ioffe had initiated systematic studies of semiconductors at this institute in the thirties, leading to many important discoveries such as the metal-semiconductor contact, work that Ioffe did together with Frenkel. Seven years later, in 1960, another completely different direction of research created excitement and interest across the world, including for Zhores Alferov. The first demonstration of laser action in ruby by Theodore Maiman, verifying Einstein's prediction of stimulated emission (1917), was followed within 18 months by the demonstration of gas lasers and semiconductor diode lasers based on GaAs homojunctions. Solid-state and gas lasers from the very beginning operated at room temperature (RT), but semiconductor lasers did not. They operated only at the temperature of liquid He, at 4 K. Gas and solid-state lasers very quickly found a wide range of applications. Not so semiconductor lasers, being judged at that time to be useless. The whole world however, recognized at once how important it would be to have RT semiconductor lasers. Teams at Bell Labs, IBM, RCA etc. entered the race, but failed for a long time. The problem—as we now know—was the p-n homojunction. In a forward-biased homojunction the charge carriers are widely spread in space at room temperature with low peak carrier density. In addition, there are enormous losses of the light emitted in the junction. At that time a new subject appeared in the life of Zhores Alferov: the heterojunctions. Heterojunctions had already appeared on the horizon in the early days of electronics, starting in 1951 with theoretical proposals for improved transistors by Shockley, Krömer and others. Single heterostructures were tried for laser action and the temperature limit was pushed up to 77 K, an enormous progression compared with 4 K, but still completely academic. In 1963, Zhores Alferov and Rudi Kazarinov in a patent application, and Herbert Krömer in a publication, proposed independently of each other to confine carriers in a double heterostructure, leading to an increase of carrier density by several orders of magnitude in the confinement layer. Alferov and Kazarinov called it the superinjection effect. But there was no practical realization. The advantages of such a structure, as pointed out a little later by Zhores Alferov in 1966, would be efficient injection and localization of charge carriers in a material having a narrower energy gap surrounded by wide-gap material, and additionally, guidance of the emitted light by index of refraction steps at the heterojunction. The proposal was a theoretical one and the first attempts at experimental realization went in an unsuccessful direction, as may happen to any of us: the combination of indirect semiconductors with direct ones to form a heterostructure. Alferov and Kazarinov's patent was then considered by some in the community as paperwork. Then suddenly, material science and device physics merged. Zhores Alferov became aware that other researchers at Ioffe had successfully grown the ternary compound AlGaAs, lattice-matched to GaAs, but with a larger band gap. He had the instinct to realize how important that progress was. Ideally perfect AlGaAs/GaAs/AlGaAs double heterostructures were grown on his initiative by liquid-phase epitaxy, lasers were processed and were observed to operate suddenly at RT. In 1968, results on the first double heterostructure laser operating at RT were submitted to Soviet Physics-Semiconductors. That was the breakthrough which ignited an explosion of work on many different applications of semiconductor lasers, which diffused, year by year, more and more into our daily life. Often, we do not realize that the same strategic principle exists, here the double heterostructure, which makes many completely different devices and systems work. Already in 1967, Zhores Alferov had started to discuss the first applications of such structures for electronic devices. A hetero-bipolar transistor was realized in 1973, nowadays a high-power and frequency-enabling device, e.g. for satellite telephones, in some ways continuing his work for the candidate degree when he had developed power rectifiers based on Ge and Si. Then, in 1970, he presented the first solar cells with efficiency >30% based on heterojunctions. Soon the Soviet Space Administration became aware of these results, and in 1986 the Soviet space station MIR was partially powered by solar cells developed by Alferov and Andre'ev. Finally in 1992, a joint research program between the author of this Editorial and Zhores Alferov, being both guest scientists at the same time at the University of California, on semiconductor quantum dots for the active zone of (nowadays many different) optoelectronic devices was proposed and inaugurated. Quantum dot lasers today have the lowest threshold current density of any semiconductor lasers. They are far superior to quantum wells as amplifiers, and their nonlinear optical applications such as cross-gain modulation in local area networks, present the basis for novel types of solar cells, nanoflash memories, single q-bit emitters for quantum cryptography etc. The story of inventing a concept and inventing applications seems to repeat in some way. This Semiconductor Science and Technology special edition presents contributions from about 100 researchers around the globe, who use in their work concepts invented by Zhores Alferov during his long active scientific life spanning six decades. They would like to pay a tribute to him and honour him on the occasion of his 80th birthday. This very personal way of saying thank you thus adds to the many prizes he has received during the past 40 years, starting with the Ballantine Gold Medal of the Franklin Institute, via the Nobel Prize for Physics 2000 to many honorary doctorates from institutes around the world.

Laser ablation mechanism of transparent layers on semiconductors with ultrashort laser pulses

NASA Astrophysics Data System (ADS)

Rublack, Tino; Hartnauer, Stefan; Mergner, Michael; Muchow, Markus; Seifert, Gerhard

2011-12-01

Transparent dielectric layers on semiconductors are used as anti-reflection coatings both for photovoltaic applications and for mid-infrared optical elements. We have shown recently that selective ablation of such layers is possible using ultrashort laser pulses at wavelengths being absorbed by the semiconductor. To get a deeper understanding of the ablation mechanism, we have done ablation experiments for different transparent materials, in particular SiO2 and SixNy on silicon, using a broad range of wavelengths ranging from UV to IR, and pulse durations between 50 and 2000 fs. The characterization of the ablated regions was done by light microscopy and atomic force microscopy (AFM). Utilizing laser wavelengths above the silicon band gap, selective ablation of the dielectric layer without noticeable damage of the opened silicon surface is possible. In contrast, ultrashort pulses (1-2 ps) at mid-infrared wavelengths already cause damage in the silicon at lower intensities than in the dielectric layer, even when a vibrational resonance (e.g. at λ = 9.26 μm for SiO2) is addressed. The physical processes behind this, on the first glance counterintuitive, observation will be discussed.

Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakry, A.; Abdulrhmann, S.; Ahmed, M., E-mail: mostafa.farghal@mu.edu.eg

2016-06-15

We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding themore » second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.« less

Modeling of Optoelectronic Devices

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Woo, Alex C. (Technical Monitor)

2000-01-01

Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

Design and Characterization of Thin Stainless Steel Burst Disks for Increasing Two-Stage Light Gas Launcher Efficiency

NASA Technical Reports Server (NTRS)

Tylka, Jonathan M.; Johnson, Kenneth L.; Henderson, Donald; Rodriguez, Karen

2012-01-01

Laser etched 300 series Stainless Steel Burst Disks (SSBD) ranging between 0.178 mm (0.007-in.) and 0.508mm (0.020-in.) thick were designed for use in a 17-caliber two-stage light gas launcher. First, a disk manufacturing method was selected using a combination of wire electrical discharge machining (EDM) to form the blank disks and laser etching to define the pedaling fracture pattern. Second, a replaceable insert was designed to go between the SSDB and the barrel. This insert reduced the stress concentration between the SSBD and the barrel, providing a place for the petals of the SSDB to open, and protecting the rifling on the inside of the barrel. Thereafter, a design of experiments was implemented to test and characterize the burst characteristics of SSBDs. Extensive hydrostatic burst testing of the SSBDs was performed to complete the design of experiments study with one-hundred and seven burst tests. The experiment simultaneously tested the effects of the following: two SSBD material states (full hard, annealed); five SSBD thicknesses 0.178, 0.254, 0.305, 0.381 mm (0.007, 0.010, 0.012, 0.015, 0.020-in.); two grain directions relative); number of times the laser etch pattern was repeated (varies between 5-200 times); two heat sink configurations (with and without heat sink); and, two barrel configurations (with and without insert). These tests resulted in the quantification of the relationship between SSBD thickness, laser etch parameters, and desired burst pressure. Of the factors investigated only thickness and number of laser etches were needed to develop a mathematical relationship predicting hydrostatic burst pressure of disks using the same barrel configuration. The fracture surfaces of two representative SSBD bursts were then investigated with a scanning electron microscope, one burst hydrostatically in a fixture and another dynamically in the launcher. The fracture analysis verified that both burst conditions resulted in a ductile overload failure indicated by transgranular microvoid coalescence, non-fragmenting rupture and mixed tensile and shear failure modes, regardless of the material states tested. More testing is underway to determine the relationship between SSBD burst pressure and projectile velocity.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Surface effects in laser diodes

NASA Astrophysics Data System (ADS)

Beister, G.; Maege, J.; Richter, G.

1988-11-01

Changes in the current-voltage characteristics below the threshold current were observed in gain-guided stripe laser diodes after preliminary lasing. This effect was not fully understood. Similar changes in the laser characteristics appeared as a result of etching in a gaseous medium. The observed changes were attributed tentatively to surface currents.

Semiconductor Laser Joint Study Program with Rome Laboratory

DTIC Science & Technology

1994-09-01

VCSELs 3.3 Laser Wafer Growth by Molecular Beam Epitaxy 8 The VCSEL structures were grown by molecular beam ...cavity surface emittimg lasers ( VCSEL ), Optical 40 interconnects, Moelcular beam epitaxy It CECOOE 17. SECURfTY CLASWICATION SECURFlY CLASSIFICATION 1 Q...7 3.3 Laser Wafer Growth by Molecular Beam Epitax. ............ 8 3.4 VCSEL Fabrication Process ................................................

Sub-kHz Linewidth GaSb Semiconductor Diode Lasers Operating Near 2 Micrometers

NASA Technical Reports Server (NTRS)

Bagheri, Mahmood; Briggs, Ryan M.; Frez, Clifford; Ksendzov, Alexander; Forouhar, Siamak

2012-01-01

We report on the phase noise properties of DFB lasers operating near 2.0 microns. Measured noise spectra indicate intrinsic laser linewidths below 1 kHz. An effective linewidth of less than 200 kHz for 5 ms measurement times is estimated.

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Integrated Broadband Quantum Cascade Laser

NASA Technical Reports Server (NTRS)

Mansour, Kamjou (Inventor); Soibel, Alexander (Inventor)

2016-01-01

A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

Quantum cascade lasers grown on silicon.

PubMed

Nguyen-Van, Hoang; Baranov, Alexei N; Loghmari, Zeineb; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournet, Julie; Narcy, Gregoire; Boissier, Guilhem; Patriarche, Gilles; Bahriz, Michael; Tournié, Eric; Teissier, Roland

2018-05-08

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Far field and wavefront characterization of a high-power semiconductor laser for free space optical communications

NASA Technical Reports Server (NTRS)

Cornwell, Donald M., Jr.; Saif, Babak N.

1991-01-01

The spatial pointing angle and far field beamwidth of a high-power semiconductor laser are characterized as a function of CW power and also as a function of temperature. The time-averaged spatial pointing angle and spatial lobe width were measured under intensity-modulated conditions. The measured pointing deviations are determined to be well within the pointing requirements of the NASA Laser Communications Transceiver (LCT) program. A computer-controlled Mach-Zehnder phase-shifter interferometer is used to characterize the wavefront quality of the laser. The rms phase error over the entire pupil was measured as a function of CW output power. Time-averaged measurements of the wavefront quality are also made under intensity-modulated conditions. The measured rms phase errors are determined to be well within the wavefront quality requirements of the LCT program.

Frequency response control of semiconductor laser by using hybrid modulation scheme.

PubMed

Mieda, Shigeru; Yokota, Nobuhide; Isshiki, Ryuto; Kobayashi, Wataru; Yasaka, Hiroshi

2016-10-31

A hybrid modulation scheme that simultaneously applies the direct current modulation and intra-cavity loss modulation to a semiconductor laser is proposed. Both numerical calculations using rate equations and experiments using a fabricated laser show that the hybrid modulation scheme can control the frequency response of the laser by changing a modulation ratio and time delay between the two modulations. The modulation ratio and time delay provide the degree of signal mixing of the two modulations and an optimum condition is found when a non-flat frequency response for the intra-cavity loss modulation is compensated by that for the direct current modulation. We experimentally confirm a 8.64-dB improvement of the modulation sensitivity at 20 GHz compared with the pure direct current modulation with a 0.7-dB relaxation oscillation peak.

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers.

PubMed

Jana, Dipankar; Porwal, S; Sharma, T K; Kumar, Shailendra; Oak, S M

2014-04-01

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

Radially polarized, half-cycle, attosecond pulses from laser wakefields through coherent synchrotronlike radiation.

PubMed

Li, F Y; Sheng, Z M; Chen, M; Yu, L L; Meyer-ter-Vehn, J; Mori, W B; Zhang, J

2014-10-01

Attosecond bursts of coherent synchrotronlike radiation are found when driving ultrathin relativistic electron disks in a quasi-one-dimensional regime of wakefield acceleration, in which the laser waist is larger than the wake wavelength. The disks of overcritical density shrink radially due to focusing wakefields, thus providing the transverse currents for the emission of an intense, radially polarized, half-cycle pulse of about 100 attoseconds in duration. The electromagnetic pulse first focuses to a peak intensity (7×10(20)W/cm(2)) 10 times larger than the driving pulse and then emerges as a conical beam. Basic dynamics of the radiative process are derived analytically and in agreement with particle-in-cell simulations. By making use of gas targets instead of solids to form the ultrathin disks, this method allows for high repetition rates required for applications.

Two semiconductor ring lasers coupled by a single-waveguide for optical memory operation

NASA Astrophysics Data System (ADS)

Van der Sande, Guy; Coomans, Werner; Gelens, Lendert

2014-05-01

Semiconductor ring lasers are semiconductor lasers where the laser cavity consists of a ring-shaped waveguide. SRLs are highly integrable and scalable, making them ideal candidates for key components in photonic integrated circuits. SRLs can generate light in two counterpropagating directions between which bistability has been demonstrated. Hence, information can be coded into the emission direction. This bistable operation allows SRLs to be used in systems for all-optical switching and as all-optical memories. For the demonstration of fast optical flip-flop operation, Hill et al. [Nature 432, 206 (2004)] fabricated two SRLs coupled by a single waveguide, rather than a solitary SRL. Nevertheless, the literature shows that a single SRL can also function perfectly as an all-optical memory. In our recent paper [W. Coomans et al., Phys. Rev. A 88, 033813, (2013)], we have raised the question whether coupling two SRLs to realize a single optical memory has any advantage over using a solitary SRL, taking into account the obvious disadvantage of a doubled footprint and power consumption. To provide the answer, we have presented in that paper a numerical study of the dynamical behavior of semiconductor ring lasers coupled by a single bus waveguide, both when weakly coupled and when strongly coupled. We have provided a detailed analysis of the multistable landscape in the coupled system, analyzed the stability of all solutions and related the internal dynamics in the individual lasers to the field effectively measured at the output of the waveguide. We have shown which coupling phases generally promote instabilities and therefore need to be avoided in the design. Regarding all-optical memory operation, we have demonstrated that there is no real advantage for bistable memory operation compared to using a solitary SRL. An increased power suppression ratio has been found to be mainly due to the destructive interference of the SRL fields at the low power port. Also, multistability between several modal configurations has been shown to remain unavoidable.

Effect of CO2 and Nd:YAG Lasers on Shear Bond Strength of Resin Cement to Zirconia Ceramic.

PubMed

Kasraei, Shahin; Rezaei-Soufi, Loghman; Yarmohamadi, Ebrahim; Shabani, Amanj

2015-09-01

Because of poor bond between resin cement and zirconia ceramics, laser surface treatments have been suggested to improve adhesion. The present study evaluated the effect of CO2 and Nd:YAG lasers on the shear bond strength (SBS) of resin cement to zirconia ceramic. Ninety zirconia disks (6×2 mm) were randomly divided into six groups of 15. In the control group, no surface treatment was used. In the test groups, laser surface treatment was accomplished using CO2 and Nd:YAG lasers, respectively (groups two and three). Composite resin disks (3×2 mm) were fabricated and cemented to zirconia disks with self-etch resin cement and stored in distilled water for 24 hours. In the test groups four-six, the samples were prepared as in groups one-three and then thermocycled and stored in distilled water for six months. The SBS tests were performed (strain rate of 0.5 mm/min). The fracture modes were observed via stereomicroscopy. Data were analyzed with one and two-way ANOVA, independent t and Tukey's tests. The SBS values of Nd:YAG group (18.95±3.46MPa) was significantly higher than that of the CO2 group (14.00±1.96MPa), but lower than that of controls (23.35±3.12MPa). After thermocycling and six months of water storage, the SBS of the untreated group (1.80±1.23 MPa) was significantly lower than that of the laser groups. In groups stored for 24 hours, 60% of the failures were adhesive; however, after thermocycling and six months of water storage, 100% of failures were adhesive. Bonding durability of resin cement to zirconia improved with CO2 and Nd:YAG laser surface treatment of zirconia ceramic.

Narrow-band double-pass superluminescent diodes emitting at 1060 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lobintsov, A A; Perevozchikov, M V; Shramenko, M V

2009-09-30

Experimental data are presented which show that double-pass superluminescent diodes (SLDs) with fibre Bragg grating (FBG) based spectrally selective external reflectors offer emission linewidths in the range 0.1-1.0 nm, i.e., one to two orders of magnitude narrower in comparison with conventional SLDs and considerably broader in comparison with single-frequency semiconductor lasers. Their optical power at the single-mode fibre output reaches 5.0-8.0 mW, and can be raised to 50 mW using a semiconductor optical amplifier. (lasers)

Semiconductor laser having a non-absorbing passive region with beam guiding

NASA Technical Reports Server (NTRS)

Botez, Dan (Inventor)

1986-01-01

A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

Apparatus for millimeter-wave signal generation

DOEpatents

Vawter, G. Allen; Hietala, Vincent M.; Zolper, John C.; Mar, Alan; Hohimer, John P.

1999-01-01

An opto-electronic integrated circuit (OEIC) apparatus is disclosed for generating an electrical signal at a frequency .gtoreq.10 GHz. The apparatus, formed on a single substrate, includes a semiconductor ring laser for generating a continuous train of mode-locked lasing pulses and a high-speed photodetector for detecting the train of lasing pulses and generating the electrical signal therefrom. Embodiments of the invention are disclosed with an active waveguide amplifier coupling the semiconductor ring laser and the high-speed photodetector. The invention has applications for use in OEICs and millimeter-wave monolithic integrated circuits (MMICs).

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Bibliography of Soviet Laser Developments, Number 50, November-December 1980.

DTIC Science & Technology

1981-11-30

ADA B 37 DEFENSE INTELLIGENCE AGENCY WASHINGTON Dc OIRECTORAT-ETC F/6 201", BIBLIOGRAPHY OF SOVIET LASER DEVELOPMENTS, NOVEMBER-DECEMBER I 9-ETCIU...Semiconductor: Simple Junction a. GaAs.............................................3 b . CUS..............................................3 5...Glass: Nd...........................................6 B . Liquid Lasers 1. Organic Dyes a. Rhodamine........................................6 b

Electric field-induced coherent control in GaAs: polarization dependence and electrical measurement [Invited].

PubMed

Wahlstrand, J K; Zhang, H; Choi, S B; Sipe, J E; Cundiff, S T

2011-11-07

A static electric field enables coherent control of the photoexcited carrier density in a semiconductor through the interference of one- and two-photon absorption. An experiment using optical detection is described. The polarization dependence of the signal is consistent with a calculation using a 14-band k · p model for GaAs. We also describe an electrical measurement. A strong enhancement of the phase-dependent photocurrent through a metal-semiconductor-metal structure is observed when a bias of a few volts is applied. The dependence of the signal on bias and laser spot position is studied. The field-induced enhancement of the signal could increase the sensitivity of semiconductor-based carrier-envelope phase detectors, useful in stabilizing mode-locked lasers for use in frequency combs.

The Basis for Photocatalytic Writing

ERIC Educational Resources Information Center

Ibanez, Jorge G.; Tausch, Michael W.; Bohrmann-Linde, Claudia; Fernandez-Gallardo, Isabel; Robles-Leyzaola, Ainoha; Krees, Simone; Meuter, Nico; Tennior, Mathias

2011-01-01

We present a demonstration involving the oxidative photobleaching of a raspberry juice dye under visible laser light irradiation using the semiconductor titanium dioxide. A plausible interpretation of the phenomenon is discussed that aids in the understanding of semiconductor energetics and the nature of light. (Contains 2 figures.)

Dependence of laser radiation intensity on the elastic deformation of a revolving optical disk with a reflective coating

NASA Astrophysics Data System (ADS)

Gladyshev, V. O.; Portnov, D. I.

2016-12-01

The physical mechanism of alteration of intensity of linearly polarized monochromatic electromagnetic radiation with λ = 630 nm in a revolving dielectric disk with a mirror coating is examined. The effect is induced by elastic deformation due to the revolution and by thermoelastic deformation of the optically transparent disk. These deformations result in birefringence, the polarization plane rotation, and a 30-40% change in the intensity of reflected radiation.

Imaging of the optic disk in caring for patients with glaucoma: ophthalmoscopy and photography remain the gold standard.

PubMed

Spaeth, George L; Reddy, Swathi C

2014-01-01

Optic disk imaging is integral to the diagnosis and treatment of patients with glaucoma. We discuss the various forms of imaging the optic nerve, including ophthalmoscopy, photography, and newer imaging modalities, including optical coherence tomography (OCT), confocal scanning laser ophthalmoscopy (HRT), and scanning laser polarimetry (GDx), specifically highlighting their benefits and disadvantages. We argue that ophthalmoscopy and photography remain the gold standard of imaging due to portability, ease of interpretation, and the presence of a large database of images for comparison. Copyright © 2014 Elsevier Inc. All rights reserved.

Apparatus and Method for Packaging and Integrating Microphotonic Devices

NASA Technical Reports Server (NTRS)

Nguyen, Hung (Inventor)

2008-01-01

An apparatus is disclosed that includes a carrier structure and an optical coupling arrangement. The carrier structure is made of a silicon material and allows for the packaging and integrating of microphotonic devices onto a single chip. The optical coupling mechanism enables laser light to be coupled into and out of a microphotonic resonant disk integrated on the carrier. The carrier provides first, second and third cavities that are dimensioned so as to accommodate the insertion and snug fitting of the microphotonic resonant disk and first and second prisms that are implemented by the optical coupling arrangement to accommodate the laser coupling.

Growth and Performance of GaInP/A1GaInP Visible Light Emitting Laser-Diodes,

DTIC Science & Technology

SEMICONDUCTOR LASERS, *EPITAXIAL GROWTH, ALLOYS, LAYERS, LOW PRESSURE, PRESSURE, QUALITY, ROOM TEMPERATURE, SUBSTRATES, GALLIUM PHOSPHIDES, INDIUM PHOSPHIDES, THERMAL PROPERTIES, ENERGY GAPS, ENERGY BANDS, VAPOR PHASES.

[The new-generation universal laser apparatus Optodan for the laser physio-, magneto- and reflexotherapy of stomatological diseases].

PubMed

Prokhonchukov, A A; Zhizhina, N A; Vasil'ev, K V; Metel'nikov, M A

2000-01-01

Presents the design of a new-generation semiconductor laser with automated regulation (wavelength 0.85-0.95 micron, power up to 4 W, and frequency 0.1-3 kHz) and potentialities of its use for laser physio-, magneto-, and reflex therapy of dental and general somatic diseases in accordance with authors patented methods.

Improving the Fabrication of Semiconductor Bragg Lasers

NASA Astrophysics Data System (ADS)

Chen, Eric Ping Chun

Fabrication process developments for Bragg reflection lasers have been optimized in this thesis using resources available to the group. New e-beam lithography and oxide etch recipes have been developed to minimize sidewall roughness and residues. E-beam evaporated metal contacts for semiconductor diode laser utilizing oblique angle deposition have also been developed in-house for the first time. Furthermore, improvement in micro-loading effect of DFB laser etching has been demonstrated where the ratio of tapered portion of the sidewall to total etch depth is reduced by half, from 33% to 15%. Electrical, optical and thermal performance of the fabricated lasers are characterized. Comparing the results to previous generation lasers, average dynamic resistance is decreased drastically from 14 Ohms to 7 Ohms and threshold current density also reduced from 1705A/cm2 to 1383A/ cm2. Improvement in laser performance is result of reduced loss from optimized fabrication processes. BRL bow-tie tapered lasers is then fabricated for the first time and output power of 18mW at 200mA input is measured. Benefiting from the increased effective area and better carrier utilization, reduction in threshold current density from 1383A/cm 2 to 712A/cm2 is observed.

Laser Card For Compact Optical Data Storage Systems

NASA Astrophysics Data System (ADS)

Drexler, Jerome

1982-05-01

The principal thrust of the optical data storage industry to date has been the 10 billion bit optical disc system. Mass memory has been the primary objective. Another objective that is beginning to demand recognition is compact memory of 1 million to 40 million bits--on a wallet-size, laser recordable card. Drexler Technology has addressed this opportunity and has succeeded in demonstrating laser writing and readback using a 16 mm by 85 mm recording stripe mounted on a card. The write/read apparatus was developed by SRI International. With this unit, 5 micron holes have been recorded using a 10 milliwatt, 830 nanometer semiconductor-diode laser. Data is entered on an Apple II keyboard using the ASCII code. The recorded reflective surface is scanned with the same laser at lower power to generate a reflected bit stream which is converted into alphanumerics and which appear on the monitor. We are pleased to report that the combination of the DREXONTM laser recordable card ("Laser Card"), the semiconductor-diode laser, arrays of large recorded holes, and human interactive data rates are all mutually compatible and point the way forward to economically feasible, compact, data-storage systems.

E-beam-pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

Rice, Robert R.; Shanley, James F.; Ruggieri, Neil F.

1995-04-01

The collapse of the Soviet Union opened many areas of laser technology to the West. E-beam- pumped semiconductor lasers (EBSL) were pursued for 25 years in several Soviet Institutes. Thin single crystal screens of II-VI alloys (ZnxCd1-xSe, CdSxSe1-x) were incorporated in laser CRTs to produce scanned visible laser beams at average powers greater than 10 W. Resolutions of 2500 lines were demonstrated. MDA-W is conducting a program for ARPA/ESTO to assess EBSL technology for high brightness, high resolution RGB laser projection application. Transfer of II-VI crystal growth and screen processing technology is underway, and initial results will be reported. Various techniques (cathodoluminescence, one- and two-photon laser pumping, etc.) have been used to assess material quality and screen processing damage. High voltage (75 kV) video electronics were procured in the U.S. to operate test EBSL tubes. Laser performance was documented as a function of screen temperature, beam voltage and current. The beam divergence, spectrum, efficiency and other characteristics of the laser output are being measured. An evaluation of the effect of laser operating conditions upon the degradation rate is being carried out by a design-of-experiments method. An initial assessment of the projected image quality will be performed.

Novel engineered compound semiconductor heterostructures for advanced electronics applications

NASA Astrophysics Data System (ADS)

Stillman, Gregory E.; Holonyak, Nick, Jr.; Coleman, James J.

1992-06-01

To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas: (1) carbon doping of AlGaAs/GaAs and InP/InGaAs materials for reliable high frequency heterojunction bipolar transistors; (2) impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers; and (3) non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.

Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

NASA Astrophysics Data System (ADS)

Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

2013-05-01

We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.

Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers

NASA Astrophysics Data System (ADS)

Li, Guang-Hui; Wang, An-Bang; Feng, Ye; Wang, Yang

2010-07-01

This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slipchenko, S. O., E-mail: serghpl@mail.ioffe.ru; Podoskin, A. A.; Pikhtin, N. A.

Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied atmore » a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.« less

New semiconductor laser technology for gas sensing applications in the 1650nm range

NASA Astrophysics Data System (ADS)

Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris

2017-08-01

Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

Blue-green upconversion laser

DOEpatents

Nguyen, D.C.; Faulkner, G.E.

1990-08-14

A blue-green laser (450--550 nm) uses a host crystal doped with Tm[sup 3+]. The Tm[sup 3+] is excited through upconversion by a red pumping laser and an IR pumping laser to a state which transitions to a relatively lower energy level through emissions in the blue-green band, e.g., 450.20 nm at 75 K. The exciting laser may be tunable dye lasers or may be solid-state semiconductor laser, e.g., GaAlAs and InGaAlP. 3 figs.

Blue-green upconversion laser

DOEpatents

Nguyen, Dinh C.; Faulkner, George E.

1990-01-01

A blue-green laser (450-550 nm) uses a host crystal doped with Tm.sup.3+. The Tm.sup.+ is excited through upconversion by a red pumping laser and an IR pumping laser to a state which transitions to a relatively lower energy level through emissions in the blue-green band, e.g., 450.20 nm at 75 K. The exciting laser may be tunable dye lasers or may be solid-state semiconductor laser, e.g., GaAlAs and InGaAlP.

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

NASA Technical Reports Server (NTRS)

Yu, A. W.; Krainak, M. A.; Unger, G. L.

1993-01-01

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

Large size crystalline vs. co-sintered ceramic Yb(3+):YAG disk performance in diode pumped amplifiers.

PubMed

Albach, Daniel; Chanteloup, Jean-Christophe

2015-01-12

A comprehensive experimental benchmarking of Yb(3+):YAG crystalline and co-sintered ceramic disks of similar thickness and doping level is presented in the context of high average power laser amplifier operation. Comparison is performed considering gain, depolarization and wave front deformation quantitative measurements and analysis.

High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

NASA Astrophysics Data System (ADS)

Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

2018-01-01

The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

1989-01-01

A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

NASA Astrophysics Data System (ADS)

Li, Jianfeng; Luo, Hongyu; He, Yulian; Liu, Yong; Luo, Binbin; Sun, Zhongyuan; Zhang, Lin; Turitsyn, Sergei K.

2014-05-01

A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μJ with a pulse width of 1.68 μs and signal to noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μm. To the best of our knowledge, this is the first 3 μm region SESAM based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers.

Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

NASA Astrophysics Data System (ADS)

Li, J. F.; Luo, H. Y.; He, Y. L.; Liu, Y.; Zhang, L.; Zhou, K. M.; Rozhin, A. G.; Turistyn, S. K.

2014-06-01

A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 µJ with a pulse width of 1.68 µs and signal-to-noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 µm. To the best of our knowledge, this is the first 3 µm region SESAM-based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers.

Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

NASA Technical Reports Server (NTRS)

Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor); Wysocki, Gerard (Inventor)

2010-01-01

A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

Bibliography of Soviet Laser Developments Number 57, January-February 1982.

DTIC Science & Technology

1983-03-02

1 3. Crystal: Miscellaneous ............. 2 4. Semiconductor a. InP..............................................3 b . Pbl...Nd...........................................6 6. Glass: Miscellaneous................................7 B . Liquid Lasers I. Organic Dyes a. Rhodamine...8 b . Miscellaneous Dyes...............................8 2. Incrganic Liquids

Solid-state semiconductor optical cryocooler based on CdS nanobelts.

PubMed

Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

2014-08-13

We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zolotarev, V V; Leshko, A Yu; Pikhtin, N A

2014-10-31

We have studied the spectral characteristics of multimode semiconductor lasers with high-order surface diffraction gratings based on asymmetric separate-confinement heterostructures grown by metalorganic vapour phase epitaxy (λ = 1070 nm). Experimental data demonstrate that, in the temperature range ±50 °C, the laser emission spectrum is ∼5 Å in width and contains a fine structure of longitudinal and transverse modes. A high-order (m = 15) surface diffraction grating is shown to ensure a temperature stability of the lasing spectrum dλ/dT = 0.9 Å K{sup -1} in this temperature range. From analysis of the fine structure of the lasing spectrum, we havemore » evaluated the mode spacing and, thus, experimentally determined the effective length of the Bragg diffraction grating, which was ∼400 μm in our samples. (lasers)« less

Approaches toward a blue semiconductor laser

NASA Technical Reports Server (NTRS)

Ladany, I.

1989-01-01

Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.

Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

PubMed Central

Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

2016-01-01

A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

Compact, High Power, Multi-Spectral Mid-Infrared Semiconductor Laser Package

NASA Astrophysics Data System (ADS)

Guo, Bujin; Hwang, Wen-Yen; Lin, Chich-Hsiang

2001-10-01

Through a vertically integrated effort involving atomic level material engineering, advanced device processing development, state-of-the-art optomechanical packaging, and thermal management, Applied Optoelectronics, Inc. (AOI), University of Houston (U H), and Physical Science, Inc. (PSI) have made progress in both Sb-based type-II semiconductor material and in P-based type-I laser device development. We have achieved record performance on inP based quantum cascade continuous wave (CW) laser (with more than 5 mW CW power at 210 K). Grating-coupled external-cavity quantum cascade lasers were studied for temperatures from 20 to 230 K. A tuning range of 88 nm has been obtained at 80 K. The technology can be made commercially available and represents a significant milestone with regard to the Dual Use Science and Technology (DUST) intention of fostering dual use commercial technology for defense need. AOI is the first commercial company to ship products of this licensed technology.

Atmospheric propagation of high power laser radiation at different weather conditions

NASA Astrophysics Data System (ADS)

Pargmann, Carsten; Hall, Thomas; Duschek, Frank; Handke, Jürgen

2016-05-01

Applications based on the propagation of high power laser radiation through the atmosphere are limited in range and effect, due to weather dependent beam wandering, beam deterioration, and scattering processes. Security and defense related application examples are countermeasures against hostile projectiles and the powering of satellites and aircrafts. For an examination of the correlations between weather condition and laser beam characteristics DLR operates at Lampoldshausen a 130 m long free transmission laser test range. Sensors around this test range continuously monitor turbulence strength, visibility, precipitation, temperature, and wind speed. High power laser radiation is obtained by a TruDisk 6001 disk laser (Trumpf company) yielding a maximum output power of 6 kW at a wavelength of 1030 nm. The laser beam is expanded to 180 mm and focused along the beam path. Power and intensity distribution are measured before and after propagation, providing information about the atmospheric transmission and alterations of diameter and position of the laser beam. Backscattered laser light is acquired by a photo receiver. As a result, measurements performed at different weather conditions show a couple of correlations to the characteristics of the laser beam. The experimental results are compared to a numerical analysis. The calculations are based on the Maxwell wave equation in Fresnel approximation. The turbulence is considered by the introduction of phase screens and the "von Karman" spectrum.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Thermal Management Investigations in Ceramic Thin Disk Lasers

DTIC Science & Technology

2011-01-14

techniques. 10-14mm diameter 0.2mm thick disks are mounted on silicon carbide ( SiC ), sapphire, and diamond submounts. From a larger platform, more than 6kW...along with various cooling techniques. 10-14mm diameter O.2mm thick disks are mounted on silicon carbide ( SiC ), sapphire, and diamond submounts. From a...assemblies are either attached to heat sinks or directly to the Cu W cooling mount, see Fig. I (c) & (d). The heat sinks tested are SiC , sapphire, and

Single-element optical injection locking of diode-laser arrays

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1988-01-01

By optically injecting a single end-element of a semiconductor laser array, both the spatial and spectral emission characteristics of the entire laser array is controlled. With the output of the array locked, the far-field emission angle of the array is continuously scanned over several degrees by varying the injection frequency.

Semiconductor laser-based ranging instrument for earth gravity measurements

NASA Technical Reports Server (NTRS)

Abshire, James B.; Millar, Pamela S.; Sun, Xiaoli

1995-01-01

A laser ranging instrument is being developed to measure the spatial variations in the Earth's gravity field. It will range in space to a cube corner on a passive co-orbiting sub-satellite with a velocity accuracy of 20 to 50 microns/sec by using AlGaAs lasers intensity modulated at 2 GHz.

Bibliography of Soviet Laser Developments, Number 51, January-February 1981.

DTIC Science & Technology

1982-03-05

which appear in this issue are listed in this issue’s Author Affiliations List. Ac ces on For VTIC T! B F -Ur_ it’s SOVIET LASER BIBLIOGRAPHY, JANUARY...Earth Activated a. Nd . ............................................. b . Er3 . . .. .. . .. . .. .. . .. . .. .. .. . .. . .. .. . .. . .. .. .. . . . 3...7. Semiconductor: Theory...............................7 8. Glass: Nd............................................7 B . Liquid Lasers 1

Probabilistic Methods for Image Generation and Encoding.

DTIC Science & Technology

1993-10-15

video and graphics lab at Georgia Tech, linking together Silicon Graphics workstations, a laser video recorder, a Betacam video recorder, scanner...computer laboratory at Georgia Tech, based on two Silicon Graphics Personal Iris workstations, a SONY laser video recorder, a SONY Betacam SP video...laser disk in component RGB form, with variable speed playback. From the laser recorder the images can be dubbed to the Betacam or the VHS recorder in

Nonequilibrium Green's functions theory for the alpha factor of quantum cascade lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Pereira, Mauro F.; Winge, David O.; Wacker, Andreas; Jumpertz, Louise; Michel, Florian; Pawlus, Robert; Elsaesser, Wolfgang E.; Schires, Kevin; Carras, Mathieu; Grillot, Frédéric

2016-10-01

The linewidth of a conventional laser is due to fluctuations in the laser field due to spontaneous emission and described by the Schalow-Townes formula. In addition to that, in a semiconductor laser there is a contribution arising from fluctuations in the refractive index induced by carrier density fluctuations. The later are quantitatively described by the linewidth enhancement or alpha factor [C. H. Henry, IEEE J. Quantum Electron. 18 (2), 259 (1982), W. W. Chow, S. W. Koch and M. Sargent III, Semiconductor-Laser Physics, Springer-Verlag (1994), M.F. Pereira Jr et al, J. Opt. Soc. Am. B10, 765 (1993). In this paper we investigate the alpha factor of quantum cascade lasers under actual operating conditions using the Nonequilibrium Greens Functions approach [A. Wacker et a, IEEE Journal of Sel. Top. in Quantum Electron.,19 1200611, (2013), T. Schmielau and M.F. Pereira, Appl. Phys. Lett. 95 231111, (2009)]. The simulations are compared with recent results obtained with different optical feedback techniques [L. Jumpertz et al, AIP ADVANCES 6, 015212 (2016)].

Heterogeneous catalysis with lasers

NASA Astrophysics Data System (ADS)

George, T. F.

1986-06-01

Theoretical techniques have been developed to describe a variety of laser-induced molecular rate processes occurring at solid surfaces which are involved in heterogeneous catalysis. Such processes include adsorption, migration, chemical reactions and desorption. The role of surface phonons in laser-selective processes and laser heating has been analyzed. The importance of electronic degrees of freedom has been considered for semiconductor and metal substrates, with special emphasis on the laser excitation of surface states. Surface-modified photochemistry has also been investigated, where the effect of a metal surface on the resonance fluorescence spectrum of a laser-driven atom/molecule has been assessed by means of surface-dressed optical Bloch equations. It is seen that the spectrum can be significantly different from the gas-phase case. Two related gas-surface collision processes have also been studied. First, the feasibility of the formation of the electron-hole pairs in a semiconductor by vibrationally excited molecules has been explored. Second, charge transfer in ion-surface collisions has been examined for both one-electron and two-electron transfer processes. Work has been initiated on microstructures and rough structures, including clusters and surface gratings.

Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

NASA Astrophysics Data System (ADS)

Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

2011-09-01

To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

High throughput web inspection system using time-stretch real-time imaging

NASA Astrophysics Data System (ADS)

Kim, Chanju

Photonic time-stretch is a novel technology that enables capturing of fast, rare and non-repetitive events. Therefore, it operates in real-time with ability to record over long period of time while having fine temporal resolution. The powerful property of photonic time-stretch has already been employed in various fields of application such as analog-to-digital conversion, spectroscopy, laser scanner and microscopy. Further expanding the scope, we fully exploit the time-stretch technology to demonstrate a high throughput web inspection system. Web inspection, namely surface inspection is a nondestructive evaluation method which is crucial for semiconductor wafer and thin film production. We successfully report a dark-field web inspection system with line scan speed of 90.9 MHz which is up to 1000 times faster than conventional inspection instruments. The manufacturing of high quality semiconductor wafer and thin film may directly benefit from this technology as it can easily locate defects with area of less than 10 microm x 10 microm where it allows maximum web flow speed of 1.8 km/s. The thesis provides an overview of our web inspection technique, followed by description of the photonic time-stretch technique which is the keystone in our system. A detailed explanation of each component is covered to provide quantitative understanding of the system. Finally, imaging results from a hard-disk sample and flexible films are presented along with performance analysis of the system. This project was the first application of time-stretch to industrial inspection, and was conducted under financial support and with close involvement by Hitachi, Ltd.

Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

PubMed

Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

2011-06-10

An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

High Temperature Superconductor/Semiconductor Hybrid Microwave Devices and Circuits

NASA Technical Reports Server (NTRS)

Romanofsky, Robert R.; Miranda, Felix A.

1999-01-01

Contents include following: film deposition technique; laser ablation; magnetron sputtering; sequential evaporation; microwave substrates; film characterization at microwave frequencies; complex conductivity; magnetic penetration depth; surface impedance; planar single-mode filters; small antennas; antenna arrays phase noise; tunable oscillations; hybrid superconductor/semiconductor receiver front ends; and noise modeling.

WDM Nanoscale Laser Diodes for Si Photonic Interconnects

DTIC Science & Technology

2016-07-25

mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Line width of a single longitudinal mode emitted by an AlGaAs heterojunction laser

NASA Astrophysics Data System (ADS)

Bogatov, Alexandr P.; Eliseev, P. G.; Luk'yanov, S. A.; Pak, G. T.; Petrakova, T. V.

1988-11-01

A nonmonotonic dependence of the emission line width on the power was observed for a single longitudinal mode of an AlGaAs heterojunction laser. This behavior could be due to the dependence of the waveguide coefficient of the amplitude-phase coupling on the nature of operation of the laser.

Self-sustained flow oscillations and heat transfer in radial flow through co-rotating parallel disks

NASA Astrophysics Data System (ADS)

Mochizuki, S.; Inoue, T.

1990-03-01

An experimental study was conducted to determine the fluid flow and heat transfer characteristics in a passage formed by two parallel rotating disks. The local heat transfer coefficients along the disk radius were measured in detail and the flow patterns between the two rotating disks were visualized by using paraffin mist and a laser-light sheet. It was disclosed that: (1) the self-sustained laminar flow separation which is characteristic of the stationary disks still exists even when the disks are set in motion, giving significant influence to the heat transfer; (2) for small source flow Reynolds number, Re, and large rotational Reynolds number, Re(omega), rotating stall dominates the heat transfer; and (3) heat transfer for steady laminar flow occurs only when Re is less than 1200 and Re(omega) is less than 20.

Self-mixing laser diode included in scanning microwave microscope to the control of probe nanodisplacement

NASA Astrophysics Data System (ADS)

Usanov, D. A.; Skripal, A. V.; Astakhov, E. I.; Dobdin, S. Y.

2018-04-01

The possibilities of self-mixing interferometry for measuring nanodisplacement of a probe included in a near-field scanning microwave microscope have been considered. The features of the formation of a laser interference signal at current modulation of the wavelength of laser radiation have been investigated. Experimental responses of a semiconductor laser system included in scanning microwave microscope to control nanodisplacement of the probe have been demonstrated.To register the nanodisplacement of the probe, it is proposed to use the method of determining the stationary phase of a laser interference signal by low-frequency spectrum of a semiconductor laser. The change of the amplitudes of the spectral components in the spectrum of the interference signal due to creation of the standing wave in the external resonator of the laser self-mixing system has been shown. The form of the interference signal at current modulation of the radiation wavelength was experimentally obtained when the probe moves with a step of 80 nm. The results of measuring nanodisplacements of an electromagnetic translator STANDA 8MVT40-13 have been demonstrated. Deviation of the nanodisplacement of the proposed method does not exceed 15%.

Semiconductor Lasers Containing Quantum Wells in Junctions

NASA Technical Reports Server (NTRS)

Yang, Rui Q.; Qiu, Yueming

2004-01-01

In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

PubMed Central

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A. Douglas; Choma, Michael A.; Cao, Hui

2015-01-01

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

Development of lead salt semiconductor lasers for the 9-17 micron spectral region

NASA Technical Reports Server (NTRS)

Linden, K. J.; Butler, J. F.; Nill, K. W.; Reeder, R. E.

1981-01-01

Improved diode lasers of Pb sub 1-x Sn sub x Se operating in the 9-17 micrometers spectral region were developed. The performance characteristics of the best lasers exceeded the contract goals of 500 microW/mode at T 30K in the 9-12 micrometers region and 200 microW/mode at T 18K in the 16-17 micrometers region. Increased reliability and device yields resulted from processing improvements which evolved from a series of diagnostic studies. By means of Auger electron spectroscopy, laser shelf storage degradation was shown to be characterized by the presence of In metal on the semiconductor crystal surfaces. Studies of various metal barrier layers between the crystals and the In metal led to the development of an improved metallurgical contacting technology which has resulted in devices with performance stability values exceeding the contract goal of a one year shelf life. Lasers cycled over 500 times between 300K and 77K were also shown to be stable. Studies on improved methods of fabricating striped geometry lasers indicated that good spectral mode characteristics resulted from lasers which stripe widths of 12 and 25 micrometers.

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging.

PubMed

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A Douglas; Choma, Michael A; Cao, Hui

2015-02-03

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.

Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity.

PubMed

Choi, Daeyoung; Wishon, Michael J; Chang, C Y; Citrin, D S; Locquet, A

2018-01-01

We observe experimentally two regimes of intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity as the feedback level is increased. The first regime encountered corresponds to multistate intermittency involving two or three states composed of several combinations of periodic, quasiperiodic, and subharmonic dynamics. The second regime is observed for larger feedback levels and involves intermittency between period-doubled and chaotic regimes. This latter type of intermittency displays statistical properties similar to those of on-off intermittency.

Crisis route to chaos in semiconductor lasers subjected to external optical feedback

NASA Astrophysics Data System (ADS)

Wishon, Michael J.; Locquet, Alexandre; Chang, C. Y.; Choi, D.; Citrin, D. S.

2018-03-01

Semiconductor lasers subjected to optical feedback have been intensively used as archetypical testbeds for high-speed (sub-ns) and high-dimensional nonlinear dynamics. By simultaneously extracting all the dynamical variables, we demonstrate that for larger current, the commonly named "quasiperiodic" route is in fact based on mixed external-cavity solutions that lock the oscillation frequency of the intensity, voltage, and separation in optical frequency through a mechanism involving successive rejections along the unstable manifold of an antimode. We show that chaos emerges from a crisis resulting from the inability to maintain locking as the unstable manifold becomes inaccessible.

Actively mode-locked erbium fiber ring laser using a Fabry-Perot semiconductor modulator as mode locker and tunable filter

NASA Astrophysics Data System (ADS)

Li, Shenping; Chan, K. T.

1999-05-01

A wavelength-tunable actively mode-locked erbium fiber ring laser was demonstrated using a Fabry-Perot semiconductor modulator. The modulator played the simultaneous roles of an intensity mode locker and a tunable optical filter. Stable single- or dual-wavelength nearly transform-limited picosecond pulses at gigabit repetition rates were generated. Continuous wavelength tuning was achieved by simply controlling the temperature of the modulator. Pulse train with a repetition rate up to 19.93 GHz (eight times the driving frequency) was obtained by using rational harmonic mode-locking technique.

A New Method of Obtaining an n- p-Structure on the Basis of the Defective Semiconductor AgIn5S8

NASA Astrophysics Data System (ADS)

Guseinov, A. G.; Salmanov, V. M.; Mamedov, R. M.; Dzhabrailova, R.; Magomedov, A. Z.

2018-02-01

The type of electrical conductivity of A 1 B 3 5 C 6 8 semiconductor compounds with defective crystalline structure is modified by the influence of powerful laser radiation. It is shown that at certain power and wavelength of laser radiation acting on the single-crystal п-AgIn5S8, an area with the p-type of conductivity is formed in the irradiated region of the crystal. Current-voltage characteristics of homo-junctions created on the basis of n-AgIn5S8 are recorded.

Optical microwave interactions in semiconductor devices

NASA Astrophysics Data System (ADS)

Figueroa, L.; Slayman, C. W.; Yen, H. W.

1980-11-01

The results of an extensive characterization of high speed analog modulation of (GaAl)As injection lasers, high speed optical detectors, and mode locking of (GaAl)As injection lasers are presented. Commercial injection lasers were successfully modulated up to 5 GHz. The 5 GHz value represents a practical upper limit to the modulation bandwith of existing commercial lasers. The laser equivalent circuit was characterized and the parasitics were found to play a significant role in the high speed modulation of the injection laser.

Energy conversion and momentum coupling of the sub-kJ laser ablation of aluminum in air atmosphere

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mori, Koichi; Maruyama, Ryo; Shimamura, Kohei

2015-08-21

Energy conversion and momentum coupling using nano-second 1-μm-wavelength pulse laser irradiation on an aluminum target were measured in air and nitrogen gas atmospheres over a wide range of laser pulse energies from sub-J to sub-kJ. From the expansion rate of the shock wave, the blast-wave energy conversion efficiency, η{sub bw}, was deduced as 0.59 ± 0.02 in the air atmosphere at an ambient pressure from 30 to 101 kPa for a constant laser fluence at 115 J/cm{sup 2}. Moreover, the momentum coupling of a circular disk target was formulated uniquely as a function of the dimensionless shock-wave radius and the ratio of the lasermore » spot radius to the disk radius, while η{sub bw} could be approximated as constant for the laser fluence from 4.7 to 4.1 kJ/cm{sup 2}, and the ambient pressure from 0.1 to 101 kPa.« less

A Semiconductor Microlaser for Intracavity Flow Cytometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akhil, O.; Copeland, G.C.; Dunne, J.L.

1999-01-20

Semiconductor microlasers are attractive components for micro-analysis systems because of their ability to emit coherent intense light from a small aperture. By using a surface-emitting semiconductor geometry, we were able to incorporate fluid flow inside a laser microcavity for the first time. This confers significant advantages for high throughput screening of cells, particulates and fluid analytes in a sensitive microdevice. In this paper we discuss the intracavity microfluidics and present preliminary results with flowing blood and brain cells.

Diffraction properties of opaque disks outside and inside a laser cavity

NASA Astrophysics Data System (ADS)

de Saint Denis, Renaud; Passilly, Nicolas; Fromager, Michael; Cagniot, Emmanuel; Ait-Ameur, Kamel

2008-02-01

Diffraction of symmetrical Laguerre-Gauss TEMp0 beams incident on an opaque disk known as a stop is considered. The near- and far-field patterns are studied. Thanks to zero-field occluding, conversion from TEM10 beam to dark hollow beam can be achieved with better efficiency than from a TEM00 beam. It is shown that the fundamental mode of a laser cavity including a diaphragm and a stop can be TEM00- or TEM10-like in shape depending on their size. This result is interpreted from the new divergence hierarchy, which characterises the diffracted TEMp0 beams emerging from the stop.