Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

PubMed Central

Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

2017-01-01

The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width. PMID:28796167

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics.

PubMed

Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

2017-08-10

The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

Ultrafast and Ultrasensitive Gas Sensors Derived from a Large Fermi-Level Shift in the Schottky Junction with Sieve-Layer Modulation.

PubMed

Cheng, Ching-Cheng; Wu, Chia-Lin; Liao, Yu-Ming; Chen, Yang-Fang

2016-07-13

Gas sensors play an important role in numerous fields, covering a wide range of applications, including intelligent systems and detection of harmful and toxic gases. Even though they have attracted much attention, the response time on the order of seconds to minutes is still very slow. To circumvent the existing problems, here, we provide a seminal attempt with the integration of graphene, semiconductor, and an addition sieve layer forming a nanocomposite gas sensor with ultrahigh sensitivity and ultrafast response. The designed sieve layer has a suitable band structure that can serve as a blocking layer to prevent transfer of the charges induced by adsorbed gas molecules into the underlying semiconductor layer. We found that the sensitivity can be reduced to the parts per million level, and the ultrafast response of around 60 ms is unprecedented compared with published graphene-based gas sensors. The achieved high performance can be interpreted well by the large change of the Fermi level of graphene due to its inherent nature of the low density of states and blocking of the sieve layer to prevent charge transfer from graphene to the underlying semiconductor layer. Accordingly, our work is very useful and timely for the development of gas sensors with high performance for practical applications.

TiO2-Based Nanoheterostructures for Promoting Gas Sensitivity Performance: Designs, Developments, and Prospects

PubMed Central

Wang, Yuan; Wu, Tao; Zhou, Yun; Meng, Chuanmin; Zhu, Wenjun; Liu, Lixin

2017-01-01

Gas sensors based on titanium dioxide (TiO2) have attracted much public attention during the past decades due to their excellent potential for applications in environmental pollution remediation, transportation industries, personal safety, biology, and medicine. Numerous efforts have therefore been devoted to improving the sensing performance of TiO2. In those effects, the construct of nanoheterostructures is a promising tactic in gas sensing modification, which shows superior sensing performance to that of the single component-based sensors. In this review, we briefly summarize and highlight the development of TiO2-based heterostructure gas sensing materials with diverse models, including semiconductor/semiconductor nanoheterostructures, noble metal/semiconductor nanoheterostructures, carbon-group-materials/semiconductor nano- heterostructures, and organic/inorganic nanoheterostructures, which have been investigated for effective enhancement of gas sensing properties through the increase of sensitivity, selectivity, and stability, decrease of optimal work temperature and response/recovery time, and minimization of detectable levels. PMID:28846621

Semiconductor Ceramic Mn0.5Fe1.5O3-Fe2O3 from Natural Minerals as Ethanol Gas Sensors

NASA Astrophysics Data System (ADS)

Aliah, H.; Syarif, D. G.; Iman, R. N.; Sawitri, A.; Sanjaya WS, M.; Nurul Subkhi, M.; Pitriana, P.

2018-05-01

In this research, Mn and Fe-based ceramic gas sensing were fabricated and characterized. This research used natural mineral which is widely available in Indonesia and intended to observe the characteristics of Mn and Fe-based semiconducting material. Fabricating process of the thick films started by synthesizing the ceramic powder of Fe(OH)3 and Mn oxide material using the precipitation method. The deposition from precipitation method previously was calcined at a temperature of 800 °C to produce nanoparticle powder. Nanoparticle powder that contains Mn and Fe oxide was mixed with an organic vehicle (OV) to produce a paste. Then, the paste was layered on the alumina substrate by using the screen printing method. XRD method was utilized to characterize the thick film crystal structure that has been produced. XRD spectra showed that the ceramic layer was formed from the solid Mn0.5Fe1.5O3 (bixbyite) and Fe2O3. In addition, the electrical properties (resistance) examination was held in the room that contains air and ethanol to determine the sensor sensitivity of ethanol gas. The sensor resistance decreases as the ethanol gas was added, showing that the sensor was sensitive to ethanol gas and an n-type semiconductor. Gas sensor exhibit sensitive characterization of ethanol gas on the concentration of (100 to 300) ppm at a temperature of (150 to 200) °C. This showed that the Mn0.5Fe1.5O3-Fe2O3 ceramic semiconductor could be utilized as the ethanol gas detector.

Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

PubMed Central

Gu, Haoshuang; Wang, Zhao; Hu, Yongming

2012-01-01

Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

Metal oxide gas sensors on the nanoscale

NASA Astrophysics Data System (ADS)

Plecenik, A.; Haidry, A. A.; Plecenik, T.; Durina, P.; Truchly, M.; Mosko, M.; Grancic, B.; Gregor, M.; Roch, T.; Satrapinskyy, L.; Moskova, A.; Mikula, M.; Kus, P.

2014-06-01

Low cost, low power and highly sensitive gas sensors operating at room temperature are very important devices for controlled hydrogen gas production and storage. One of the disadvantages of chemosensors is their high operating temperature (usually 200 - 400 °C), which excludes such type of sensors from usage in explosive environment. In this report, a new concept of gas chemosensors operating at room temperature based on TiO2 thin films is discussed. Integration of such sensor is fully compatible with sub-100 nm semiconductor technology and could be transferred directly from labor to commercial sphere.

A customized metal oxide semiconductor-based gas sensor array for onion quality evaluation: system development and characterization.

PubMed

Konduru, Tharun; Rains, Glen C; Li, Changying

2015-01-12

A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage.

A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

PubMed Central

Konduru, Tharun; Rains, Glen C.; Li, Changying

2015-01-01

A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

Development of Sic Gas Sensor Systems

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

2002-01-01

Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

Miniaturized Metal (Metal Alloy)/PdO(x)/SiC Hydrogen and Hydrocarbon Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO(x)). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600 C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sided sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

76 FR 68434 - 36(b)(1) Arms Sales Notification

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-04

... Trainers (THT), 50 Field Handling Trainers (FHT), 2 GCU-31A/E Gas Charging Units, 110 Night Sights, 1...), 50 Field Handling Trainers (FHT), 2 GCU-31A/E Gas Charging Units, 110 Night Sights, 1 STINGER Troop... software; optical coatings; ultraviolet sensors; semi-conductor detectors infrared band sensors...

Miniaturized ceramic platform for metal oxide gas sensors array

NASA Astrophysics Data System (ADS)

Samotaev, N. N.

2016-10-01

In work is developing an ultra-fast, low cost and technology flexible process for production array of ceramic MEMS microhotplates for using in semiconductor gas sensors orientated to small series applications, where is sufficient to produce 10-100 samples with a different layout of heaters and membrane per day.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2011-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x ). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Xu, Jennifer C. (Inventor); Hunter, Gary W. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

SiC-Based Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

1997-01-01

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

DFT study of adsorption behavior of NO, CO, NO2, and NH3 molecules on graphene-like BC3: A search for highly sensitive molecular sensor

NASA Astrophysics Data System (ADS)

Mehdi Aghaei, Sadegh; Monshi, M. M.; Torres, I.; Zeidi, S. M. J.; Calizo, I.

2018-01-01

The adsorption behaviors of toxic gas molecules (NO, CO, NO2, and NH3) on the graphene-like boron carbide (BC3) are investigated using first-principle density functional theory. The graphene-like BC3 monolayer is a semiconductor with a band gap of 0.733 eV. It is discovered that all the above gas molecules are chemisorbed on the BC3 sheet while they retain their molecular forms. It is also revealed that the NO2 gas molecule could be dissociated into NO and O species through the adsorption process. The amounts of charge transfer upon adsorption of CO and NH3 gas molecules on the BC3 are found to be small. The band gap changes in BC3 as a result of interactions with CO and NH3 are only 4.63% and 16.7%, indicating that the BC3-based sensor has a low and moderate sensitivity to CO and NH3, respectively. Contrariwise, upon adsorption of NO or NO2 on the BC3, significant charges are transferred from the molecules to the BC3 sheet, causing a semiconductor-metal and semiconductor-p type semiconductor transition. Our study suggests that the BC3-based sensor has a high potential for NO and NO2 detection due to the significant conductance changes, moderate adsorption energy, and short recovery time. More excitingly, the BC3 is a likely catalyst for dissociation of the NO2 gas molecule.

Method and apparatus for real-time measurement of fuel gas compositions and heating values

DOEpatents

Zelepouga, Serguei; Pratapas, John M.; Saveliev, Alexei V.; Jangale, Vilas V.

2016-03-22

An exemplary embodiment can be an apparatus for real-time, in situ measurement of gas compositions and heating values. The apparatus includes a near infrared sensor for measuring concentrations of hydrocarbons and carbon dioxide, a mid infrared sensor for measuring concentrations of carbon monoxide and a semiconductor based sensor for measuring concentrations of hydrogen gas. A data processor having a computer program for reducing the effects of cross-sensitivities of the sensors to components other than target components of the sensors is also included. Also provided are corresponding or associated methods for real-time, in situ determination of a composition and heating value of a fuel gas.

Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

PubMed Central

Elia, Angela; Lugarà, Pietro Mario; Di Franco, Cinzia; Spagnolo, Vincenzo

2009-01-01

The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques. PMID:22303143

Reduced graphene oxide-ZnO composites based gas sensors: A review

NASA Astrophysics Data System (ADS)

Thakare, N. B.; Raghuwanshi, F. C.; Kalyamwar, V. S.; Tamgadge, Y. S.

2018-05-01

The need to monitor and control life threatening gases has led to research and development of a wide variety of sensors using different materials and technologies. Recently rGO (reduced graphene oxide)-MOS (Metal Oxide Semiconductor) architectures have been studied for efficient and cost effective gas sensors that will operate at low temperature. In this review paper, we review latest findings and progress in rGO-ZnO composites as sensors to detect volatile and toxic gases.

A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position

PubMed Central

Manoli, Kyriaki; Dumitru, Liviu Mihai; Mulla, Mohammad Yusuf; Magliulo, Maria; Di Franco, Cinzia; Santacroce, Maria Vittoria; Scamarcio, Gaetano; Torsi, Luisa

2014-01-01

Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made. PMID:25215940

Solid state potentiometric gaseous oxide sensor

NASA Technical Reports Server (NTRS)

Wachsman, Eric D. (Inventor); Azad, Abdul Majeed (Inventor)

2003-01-01

A solid state electrochemical cell (10a) for measuring the concentration of a component of a gas mixture (12) includes first semiconductor electrode (14) and second semiconductor electrode (16) formed from first and second semiconductor materials, respectively. The materials are selected so as to undergo a change in resistivity upon contacting a gas component, such as CO or NO. An electrolyte (18) is provided in contact with the first and second semiconductor electrodes. A reference cell can be included in contact with the electrolyte. Preferably, a voltage response of the first semiconductor electrode is opposite in slope direction to that of the second semiconductor electrode to produce a voltage response equal to the sum of the absolute values of the control system uses measured pollutant concentrations to direct adjustment of engine combustion conditions.

Empowering smartphone users with sensor node for air quality measurement

NASA Astrophysics Data System (ADS)

Oletic, Dinko; Bilas, Vedran

2013-06-01

We present an architecture of a sensor node developed for use with smartphones for participatory sensing of air quality in urban environments. Our solution features inexpensive metal-oxide semiconductor gas sensors (MOX) for measurement of CO, O3, NO2 and VOC, along with sensors for ambient temperature and humidity. We focus on our design of sensor interface consisting of power-regulated heater temperature control, and the design of resistance sensing circuit. Accuracy of the sensor interface is characterized. Power consumption of the sensor node is analysed. Preliminary data obtained from the CO gas sensors in laboratory conditions and during the outdoor field-test is shown.

Laboratory Connections--Gas Monitoring Transducers Part III: Combustible Gas Sensors.

ERIC Educational Resources Information Center

Powers, Michael H.; Dahman, Doug

1989-01-01

Describes an interface that uses semiconductor metal oxides to detect low gas concentrations. Notes the detector has long life, high stability, good reproducibility, low cost, and is able to convert the gas concentration to an electrical signal with a simple circuit. Theory, schematic, and applications are provided. (MVL)

Semiconductor Sensors for Studying the Heterogeneous Destruction of Ozone at Low Concentrations

NASA Astrophysics Data System (ADS)

Obvintseva, L. A.; Sharova, T. B.; Avetisov, A. K.; Sukhareva, I. P.

2018-06-01

Prospects for the use of semiconductor resistive sensors in studies of the heterogeneous destruction of ozone at low concentrations (5-400 μg/m3) were shown. The influence of various factors (sensor temperature, gas flow rate, ozone concentration) on the results of ozone concentration measurements with sensors of various types was studied. Methods for forming a sensitive layer of In2O3(3% Fe2O3) sensors with specified parameters of calibration curves were proposed. The optimum conditions for the operation of sensors in a flow mode were formulated. The results of the study of heterogeneous destruction of ozone on microfiber polymer and natural disperse (sand, coals) materials obtained by the developed method were presented.

Sulfonated poly(ether ether ketone)/polypyrrole core-shell nanofibers: a novel polymeric adsorbent/conducting polymer nanostructures for ultrasensitive gas sensors.

PubMed

Wang, Wei; Li, Zhenyu; Jiang, Tingting; Zhao, Zhiwei; Li, Ye; Wang, Zhaojie; Wang, Ce

2012-11-01

Conducting polymers-based gas sensors have attracted increasing research attention these years. The introduction of inorganic sensitizers (noble metals or inorganic semiconductors) within the conducting polymers-based gas sensors has been regarded as the generally effective route for further enhanced sensors. Here we demonstrate a novel route for highly-efficient conducting polymers-based gas sensors by introduction of polymeric sensitizers (polymeric adsorbent) within the conducting polymeric nanostructures to form one-dimensional polymeric adsorbent/conducting polymer core-shell nanocomposites, via electrospinning and solution-phase polymerization. The adsorption effect of the SPEEK toward NH₃ can facilitate the mass diffusion of NH₃ through the PPy layers, resulting in the enhanced sensing signals. On the basis of the SPEEK/PPy nanofibers, the sensors exhibit large gas responses, even when exposed to very low concentration of NH₃ (20 ppb) at room temperature.

Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, D.; Liu, C. C.; Wu, Q. H.R

1995-01-01

Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.

Multicapillary Gas Chromatography-Temperature Modulated Metal Oxide Semiconductor Sensors Array Detector for Monitoring of Volatile Organic Compounds in Closed Atmosphere Using Gaussian Apodization Factor Analysis.

PubMed

Alinoori, Amir Hossein; Masoum, Saeed

2018-05-22

A unique metal oxide semiconductor sensor (MOS) array detector with eight sensors was designed and fabricated in a PTFE chamber as an interface for coupling with multicapillary gas chromatography. This design consists of eight transfer lines with equal length between the multicapillary columns (MCC) and sensors. The deactivated capillary columns were passed through each transfer line and homemade flow splitter to distribute the same gas flow on each sensor. Using the eight ports flow splitter design helps us to equal the length of carrier gas path and flow for each sensor, minimizing the dead volume of the sensor's chamber and increasing chromatographic resolution. In addition to coupling of MCC to MOS array detector and other considerations in hardware design, modulation of MOS temperature was used to increase sensitivity and selectivity, and data analysis was enhanced with adapted Gaussian apodization factor analysis (GAFA) as a multivariate curve resolution algorithm. Continues air sampling and injecting system (CASI) design provides a fast and easily applied method for continues injection of air sample with no additional sample preparation. The analysis cycle time required for each run is less than 300 s. The high sample load and sharp injection with the fast separation by MCC decrease the peak widths and improve detection limits. This homemade customized instrument is an alternative to other time-consuming and expensive technologies for continuous monitoring of outgassing in air samples.

Accelerating Gas Adsorption on 3D Percolating Carbon Nanotubes.

PubMed

Li, Hui; Wen, Chenyu; Zhang, Youwei; Wu, Dongping; Zhang, Shi-Li; Qiu, Zhi-Jun

2016-02-18

In the field of electronic gas sensing, low-dimensional semiconductors such as single-walled carbon nanotubes (SWCNTs) can offer high detection sensitivity owing to their unprecedentedly large surface-to-volume ratio. The sensitivity and responsivity can further improve by increasing their areal density. Here, an accelerated gas adsorption is demonstrated by exploiting volumetric effects via dispersion of SWCNTs into a percolating three-dimensional (3D) network in a semiconducting polymer. The resultant semiconducting composite film is evaluated as a sensing membrane in field effect transistor (FET) sensors. In order to attain reproducible characteristics of the FET sensors, a pulsed-gate-bias measurement technique is adopted to eliminate current hysteresis and drift of sensing baseline. The rate of gas adsorption follows the Langmuir-type isotherm as a function of gas concentration and scales with film thickness. This rate is up to 5 times higher in the composite than only with an SWCNT network in the transistor channel, which in turn results in a 7-fold shorter time constant of adsorption with the composite. The description of gas adsorption developed in the present work is generic for all semiconductors and the demonstrated composite with 3D percolating SWCNTs dispersed in functional polymer represents a promising new type of material for advanced gas sensors.

Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors

PubMed Central

Feng, Ping; Shao, Feng; Shi, Yi; Wan, Qing

2014-01-01

One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed. PMID:25232915

Optical Fiber Chemical Sensor with Sol-Gel Derived Refractive Material as Transducer for High Temperature Gas Sensing in Clean Coal Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiquan Tao

2006-12-31

The chemistry of sol-gel derived silica and refractive metal oxide has been systematically studied. Sol-gel processes have been developed for preparing porous silica and semiconductor metal oxide materials. Micelle/reversed micelle techniques have been developed for preparing nanometer sized semiconductor metal oxides and noble metal particles. Techniques for doping metal ions, metal oxides and nanosized metal particles into porous sol-gel material have also been developed. Optical properties of sol-gel derived materials in ambient and high temperature gases have been studied by using fiber optic spectroscopic techniques, such as fiber optic ultraviolet/visible absorption spectrometry, fiber optic near infrared absorption spectrometry and fibermore » optic fluorescence spectrometry. Fiber optic spectrometric techniques have been developed for investigating the optical properties of these sol-gel derived materials prepared as porous optical fibers or as coatings on the surface of silica optical fibers. Optical and electron microscopic techniques have been used to observe the microstructure, such as pore size, pore shape, sensing agent distribution, of sol-gel derived material, as well as the size and morphology of nanometer metal particle doped in sol-gel derived porous silica, the nature of coating of sol-gel derived materials on silica optical fiber surface. In addition, the chemical reactions of metal ion, nanostructured semiconductor metal oxides and nanometer sized metal particles with gas components at room temperature and high temperatures have also been investigated with fiber optic spectrometric methods. Three classes of fiber optic sensors have been developed based on the thorough investigation of sol-gel chemistry and sol-gel derived materials. The first group of fiber optic sensors uses porous silica optical fibers doped with metal ions or metal oxide as transducers for sensing trace NH{sub 3} and H{sub 2}S in high temperature gas samples. The second group of fiber optic sensors uses sol-gel derived porous silica materials doped with nanometer particles of noble metals in the form of fiber or coating for sensing trace H{sub 2}, NH{sub 3} and HCl in gas samples at for applications ambient temperature. The third classes of fiber optic sensors use sol-gel derived semiconductor metal oxide coating on the surface of silica optical fiber as transducers for selectively sensing H{sub 2}, CH{sub 4} and CO at high temperature. In addition, optical fiber temperature sensors use the fluorescence signal of rare-earth metal ions doped porous silica optical fiber or the optical absorption signal of thermochromic metal oxide materials coated on the surface of silica optical fibers have also been developed for monitoring gas temperature of corrosive gas. Based on the results obtained from this project, the principle of fiber optic sensor techniques for monitoring matrix gas components as well as trace components of coal gasification derived syngas has been established. Prototype sensors for sensing trace ammonia and hydrogen sulfide in gasification derived syngas have been built up in our laboratory and have been tested using gas samples with matrix gas composition similar to that of gasification derived fuel gas. Test results illustrated the feasibility of these sensors for applications in IGCC processes.« less

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

PubMed Central

Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

2013-01-01

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures. PMID:24113685

Silicon carbide-based hydrogen gas sensors for high-temperature applications.

PubMed

Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel

2013-10-09

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

Computational investigation of single-wall carbon nanotube functionalized with palladium nanoclusters as hydrogen sulfide gas sensor

NASA Astrophysics Data System (ADS)

Bagherzadeh-Nobari, S.; Hosseini-Istadeh, K.; Kalantarinejad, R.; Elahi, S. M.; Shokri, A. A.

2018-03-01

Our aim is to study theoretically, the sensitivity of a hydrogen sulfide gas sensor, with regard to electrical conductance behavior. Our senor consists of a semiconductor single-wall carbon nanotube (SWCNT), functionalized with palladium nanoclusters, sandwiched between two gold electrodes. Initially, we have computed the optimized structure of the sensor, via molecular dynamic simulations. Then by using non-equilibrium Green's function method, combined with density functional theory, the electronic and transport properties of the sensor were calculated, and compared before and after adsorption of H2S gas, at different bias voltages. The highest sensitivity is achieved at 40 mV bias voltage. In this bias voltage, H2S gas adsorption causes a significant decrease of current, because as a result of charge transfer from the CNT and palladium nanoclusters, to H2S gas, majority carriers (electrons) decrease. The results show that CNT decorated with palladium nanoclusters can be a promising candidate in gas-sensorics.

A Real-Time De-Noising Algorithm for E-Noses in a Wireless Sensor Network

PubMed Central

Qu, Jianfeng; Chai, Yi; Yang, Simon X.

2009-01-01

A wireless e-nose network system is developed for the special purpose of monitoring odorant gases and accurately estimating odor strength in and around livestock farms. This system is to simultaneously acquire accurate odor strength values remotely at various locations, where each node is an e-nose that includes four metal-oxide semiconductor (MOS) gas sensors. A modified Kalman filtering technique is proposed for collecting raw data and de-noising based on the output noise characteristics of those gas sensors. The measurement noise variance is obtained in real time by data analysis using the proposed slip windows average method. The optimal system noise variance of the filter is obtained by using the experiments data. The Kalman filter theory on how to acquire MOS gas sensors data is discussed. Simulation results demonstrate that the proposed method can adjust the Kalman filter parameters and significantly reduce the noise from the gas sensors. PMID:22399946

Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview

PubMed Central

Woo, Hyung-Sik; Na, Chan Woong; Lee, Jong-Heun

2016-01-01

Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW) networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular, n-type NWs such as SnO2, ZnO, and In2O3 are widely studied because of their simple synthetic preparation and high gas response. However, due to their usually high responses to C2H5OH and NO2, the selective detection of other harmful and toxic gases using oxide NWs remains a challenging issue. Various strategies—such as doping/loading of noble metals, decorating/doping of catalytic metal oxides, and the formation of core–shell structures—have been explored to enhance gas selectivity and sensitivity, and are discussed herein. Additional methods such as the transformation of n-type into p-type NWs and the formation of catalyst-doped hierarchical structures by branch growth have also proven to be promising for the enhancement of gas selectivity. Accordingly, the physicochemical modification of oxide NWs via various methods provides new strategies to achieve the selective detection of a specific gas, and after further investigations, this approach could pave a new way in the field of NW-based semiconductor-type gas sensors. PMID:27657076

Chemical Gas Sensors for Aeronautic and Space Applications 2

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Chen, Liong-Yu; Neudeck, Phil G.; Knight, Dale; Liu, C. C.; Wu, Q. H.; Zhou, H. J.; Makel, Darby; Liu, M.; Rauch, W. A.

1998-01-01

Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Areas of interest include launch vehicle safety monitoring, emission monitoring, and fire detection. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Sensor development for each application involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this area of sensor development a field of significant interest.

Chemical Gas Sensors for Aeronautics and Space Applications III

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Chen, L. Y.; Liu, C. C.; Wu, Q. H.; Sawayda, M. S.; Jin, Z.; Hammond, J.; Makel, D.; Liu, M.;

Chemical Gas Sensors for Aeronautic and Space Applications 2

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Chen, L. Y.; Neudeck, P. G.; Knight, D.; Liu, C. C.; Wu, Q. H.; Zhou, H. J.; Makel, D.; Liu, M.; Rauch, W. A.

1998-01-01

Aeronautic and Space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Areas of most interest include launch vehicle safety monitoring emission monitoring and fire detection. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensor is based on progress two types of technology: 1) Micro-machining and micro-fabrication technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Sensor development for each application involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this micro-fabricated gas sensor technology make this area of sensor development a field of significant interest.

Highly Sensitive and Selective Hydrogen Gas Sensor Using the Mesoporous SnO₂ Modified Layers.

PubMed

Xue, Niuzi; Zhang, Qinyi; Zhang, Shunping; Zong, Pan; Yang, Feng

2017-10-14

It is important to improve the sensitivities and selectivities of metal oxide semiconductor (MOS) gas sensors when they are used to monitor the state of hydrogen in aerospace industry and electronic field. In this paper, the ordered mesoporous SnO₂ (m-SnO₂) powders were prepared by sol-gel method, and the morphology and structure were characterized by X-ray diffraction analysis (XRD), transmission electron microscope (TEM) and Brunauer-Emmett-Teller (BET). The gas sensors were fabricated using m-SnO₂ as the modified layers on the surface of commercial SnO₂ (c-SnO₂) by screen printing technology, and tested for gas sensing towards ethanol, benzene and hydrogen with operating temperatures ranging from 200 °C to 400 °C. Higher sensitivity was achieved by using the modified m-SnO₂ layers on the c-SnO₂ gas sensor, and it was found that the S(c/m2) sensor exhibited the highest response (Ra/Rg = 22.2) to 1000 ppm hydrogen at 400 °C. In this paper, the mechanism of the sensitivity and selectivity improvement of the gas sensors is also discussed.

Effect of top-down nanomachining on electrical conduction properties of TiO2 nanostructure-based chemical sensors.

PubMed

Francioso, L; De Pascali, C; Capone, S; Siciliano, P

2012-03-09

The present research was motivated by the growing interest of the scientific community towards the understanding of basic gas-surface interaction mechanisms in 1D nanostructured metal oxide semiconductors, whose significantly enhanced chemical detection sensitivity is known. In this work, impedance spectroscopy (IS) was used to evaluate how a top-down patterning of the sensitive layer can modulate the electrical properties of a gas sensor based on a fully integrated nanometric array of TiO(2) polycrystalline strips. The aim of the study was supported by comparative experimental activity carried out on different thin film gas sensors based on identical TiO(2) polycrystalline sensitive thin films. The impedance responses of the investigated devices under dry air (as the reference environment) and ethanol vapors (as the target gas) were fitted by a complex nonlinear least-squares method using LEVM software, in order to find an appropriate equivalent circuit describing the main conduction processes involved in the gas/semiconductor interactions. Two different equivalent circuit models were identified as completely representative of the TiO(2) thin film and the TiO(2) nanostructure-based gas sensors, respectively. All the circuit parameters were quantified and the related standard deviations were evaluated. The simulated results well approximated the experimental data as indicated by the small mean errors of the fits (in the range of 10(-4)) and the small standard deviations of the circuit parameters. In addition to the substrate capacitance, three different contributions to the overall conduction mechanism were identified for both equivalent circuits: bulk conductivity, intergrain contact and semiconductor-electrode contact, electrically represented by an ideal resistor R(g), a parallel R(gb)C(gb) block and a parallel R(c)-CPE(c) combination, respectively. In terms of equivalent circuit modeling, the sensitive layer patterning introduced an additional parameter in parallel connection with the whole circuit block. Such a circuit element (an ideal inductor, L) has an average value of about 125 μH and exhibits no direct dependence on the analyte gas concentration. Its presence could be due to complex mutual inductance effects occurring both between all the adjacent nanostrips (10 µm spaced) and between the nanostrips and the n-type-doped silicon substrate underneath the thermal oxide (wire/plate effect), where a two order of magnitude higher magnetic permeability of silicon can give L values comparable with those estimated by the fitting procedure. Slightly modified experimental models confirmed that the theoretical background, regulating thin film devices based on metal oxide semiconductors, is also valid for nanopatterned devices.

Chemical Gas Sensors for Aeronautic and Space Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Chen, Liang-Yu; Neudeck, Philip G.; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai; Zhou, Huan-Jun

1997-01-01

Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Two areas of particular interest are safety monitoring and emission monitoring. In safety monitoring, detection of low concentrations of hydrogen at potentially low temperatures is important while for emission monitoring the detection of nitrogen oxides, hydrogen, hydrocarbons and oxygen is of interest. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: (1) Micromachining and microfabrication technology to fabricate miniaturized sensors. (2) The development of high temperature semiconductors, especially silicon carbide. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this general area of sensor development a field of significant interest.

First-principles calculations on electronic properties of single-walled carbon nanotubes for H{sub 2}S gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muliyati, Dewi, E-mail: dmuliyati@unj.ac.id; Dept. of Physics, Faculty of Mathematics and Natural Sciences, Universitas Negeri Jakarta; Wella, Sasfan A.

2015-09-30

In this research, we performed first-principles calculations by means of density functional theory (DFT) to investigate the interaction of H{sub 2}S gas on the surface of single-walled carbon nanotubes (SWNTs). In order to understand the effect of chirality to the electronic structure of SWNTs/H{sub 2}S, the pristine SWNTs was varied to become SWNTs (5,0), (6,0), (7,0), (8,0), (9,0), and (10,0). From the calculation we found that after H{sub 2}S adsorbed on surface of SWNTs, the electronic properties of system changes from semiconductor to metal but not vice versa. It was only SWNTs (5,0), (7,0), (8,0), and (10,0) occuring the changingmore » on its electronic properties behavior, others were remain similar with its initial behavior. In the degassing process, metal return to semiconductor behavior, which is an indication that SWNTs is a good gas sensors, responsive and reversible.« less

Highly Sensitive and Selective Hydrogen Gas Sensor Using the Mesoporous SnO2 Modified Layers

PubMed Central

Xue, Niuzi; Zhang, Qinyi; Zhang, Shunping; Zong, Pan; Yang, Feng

2017-01-01

It is important to improve the sensitivities and selectivities of metal oxide semiconductor (MOS) gas sensors when they are used to monitor the state of hydrogen in aerospace industry and electronic field. In this paper, the ordered mesoporous SnO2 (m-SnO2) powders were prepared by sol-gel method, and the morphology and structure were characterized by X-ray diffraction analysis (XRD), transmission electron microscope (TEM) and Brunauer–Emmett–Teller (BET). The gas sensors were fabricated using m-SnO2 as the modified layers on the surface of commercial SnO2 (c-SnO2) by screen printing technology, and tested for gas sensing towards ethanol, benzene and hydrogen with operating temperatures ranging from 200 °C to 400 °C. Higher sensitivity was achieved by using the modified m-SnO2 layers on the c-SnO2 gas sensor, and it was found that the S(c/m2) sensor exhibited the highest response (Ra/Rg = 22.2) to 1000 ppm hydrogen at 400 °C. In this paper, the mechanism of the sensitivity and selectivity improvement of the gas sensors is also discussed. PMID:29036898

MOF-Based Membrane Encapsulated ZnO Nanowires for Enhanced Gas Sensor Selectivity.

PubMed

Drobek, Martin; Kim, Jae-Hun; Bechelany, Mikhael; Vallicari, Cyril; Julbe, Anne; Kim, Sang Sub

2016-04-06

Gas sensors are of a great interest for applications including toxic or explosive gases detection in both in-house and industrial environments, air quality monitoring, medical diagnostics, or control of food/cosmetic properties. In the area of semiconductor metal oxides (SMOs)-based sensors, a lot of effort has been devoted to improve the sensing characteristics. In this work, we report on a general methodology for improving the selectivity of SMOx nanowires sensors, based on the coverage of ZnO nanowires with a thin ZIF-8 molecular sieve membrane. The optimized ZnO@ZIF-8-based nanocomposite sensor shows markedly selective response to H2 in comparison with the pristine ZnO nanowires sensor, while showing the negligible sensing response to C7H8 and C6H6. This original MOF-membrane encapsulation strategy applied to nanowires sensor architecture pave the way for other complex 3D architectures and various types of applications requiring either gas or ion selectivity, such as biosensors, photo(catalysts), and electrodes.

Interaction of hybrid nanowire-nanoparticle structures with carbon monoxide.

PubMed

Dobrokhotov, V V; McIlroy, D N; Norton, M Grant; Abdelrahaman, R; Safir, A; Berven, C A

2009-04-01

A gas-phase sensor based on a GaN nanowire mat decorated with Au nanoparticles was studied both experimentally and theoretically. The sensor is responsive to CO and H(2) and could be used to study the water-gas-shift reaction, which involves combining CO and H(2)O to produce H(2). It was shown that for catalyzing this reaction using support Au nanoparticles, the sequence in which the reactants are exposed to the catalyst surface is critical. To quantitatively evaluate the sensor response to gas exposure a depletion model was developed that considered the Au nanoparticle-semiconductor interface as a nano-Schottky barrier where variation in the depletion region caused changes in the electrical conductivity of the nanowires.

Gas sensing in 2D materials

NASA Astrophysics Data System (ADS)

Yang, Shengxue; Jiang, Chengbao; Wei, Su-huai

2017-06-01

Two-dimensional (2D) layered inorganic nanomaterials have attracted huge attention due to their unique electronic structures, as well as extraordinary physical and chemical properties for use in electronics, optoelectronics, spintronics, catalysts, energy generation and storage, and chemical sensors. Graphene and related layered inorganic analogues have shown great potential for gas-sensing applications because of their large specific surface areas and strong surface activities. This review aims to discuss the latest advancements in the 2D layered inorganic materials for gas sensors. We first elaborate the gas-sensing mechanisms and introduce various types of gas-sensing devices. Then, we describe the basic parameters and influence factors of the gas sensors to further enhance their performance. Moreover, we systematically present the current gas-sensing applications based on graphene, graphene oxide (GO), reduced graphene oxide (rGO), functionalized GO or rGO, transition metal dichalcogenides, layered III-VI semiconductors, layered metal oxides, phosphorene, hexagonal boron nitride, etc. Finally, we conclude the future prospects of these layered inorganic materials in gas-sensing applications.

Carbon Monoxide Monitor for Automobile Passenger Compartment

DOT National Transportation Integrated Search

1991-07-01

This document reports the results of the study conducted by the Carnegie Mellon Research Institute (CMRI) to evaluate its recently developed metal oxide semiconductor (MOS) gas sensor technology for applications in the automobile environment. The spe...

Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil.

PubMed

Knobelspies, Stefan; Bierer, Benedikt; Daus, Alwin; Takabayashi, Alain; Salvatore, Giovanni Antonio; Cantarella, Giuseppe; Ortiz Perez, Alvaro; Wöllenstein, Jürgen; Palzer, Stefan; Tröster, Gerhard

2018-01-26

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO₂ gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits.

Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil

PubMed Central

Bierer, Benedikt; Takabayashi, Alain; Ortiz Perez, Alvaro; Wöllenstein, Jürgen

2018-01-01

We present a gas sensitive thin-film transistor (TFT) based on an amorphous Indium–Gallium–Zinc–Oxide (a-IGZO) semiconductor as the sensing layer, which is fabricated on a free-standing flexible polyimide foil. The photo-induced sensor response to NO2 gas at room temperature and the cross-sensitivity to humidity are investigated. We combine the advantages of a transistor based sensor with flexible electronics technology to demonstrate the first flexible a-IGZO based gas sensitive TFT. Since flexible plastic substrates prohibit the use of high operating temperatures, the charge generation is promoted with the help of UV-light absorption, which ultimately triggers the reversible chemical reaction with the trace gas. Furthermore, the device fabrication process flow can be directly implemented in standard TFT technology, allowing for the parallel integration of the sensor and analog or logical circuits. PMID:29373524

Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments

PubMed Central

Peterson, Philip J. D.; Aujla, Amrita; Brundle, Alex G.; Thompson, Martin R.; Vande Hey, Josh; Leigh, Roland J.

2017-01-01

The potential of inexpensive Metal Oxide Semiconductor (MOS) gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS)) in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μg m−3 and ozone precision of 26.8 μg m−3, for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation) between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment. PMID:28753910

Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments.

PubMed

Peterson, Philip J D; Aujla, Amrita; Grant, Kirsty H; Brundle, Alex G; Thompson, Martin R; Vande Hey, Josh; Leigh, Roland J

2017-07-19

The potential of inexpensive Metal Oxide Semiconductor (MOS) gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS)) in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μ g m - 3 and ozone precision of 26.8 μ g m - 3 , for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation) between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment.

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

NASA Astrophysics Data System (ADS)

Pearton, S. J.; Kang, B. S.; Kim, Suku; Ren, F.; Gila, B. P.; Abernathy, C. R.; Lin, Jenshan; Chu, S. N. G.

2004-07-01

There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to central monitoring locations. We discuss the advances in use of GaN-based solid-state sensors for these applications. AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization-induced two-dimensional electron gas (2DEG). Furthermore, spontaneous and piezoelectric polarization-induced surface and interface charges can be used to develop very sensitive but robust sensors to detect gases, polar liquids and mechanical pressure. AlGaN/GaN HEMT structures have been demonstrated to exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. Pt-gated GaN Schottky diodes and Sc2O3/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H2. Of particular interest is detection of ethylene (C2H4), which has strong double bonds and hence is difficult to dissociate at modest temperatures. Apart from combustion gas sensing, the AlGaN/GaN heterostructure devices can be used as sensitive detectors of pressure changes. In addition, large changes in source-drain current of the AlGaN/GaN HEMT sensors can be detected upon adsorption of biological species on the semiconductor surface. Finally, the nitrides provide an ideal platform for fabrication of surface acoustic wave (SAW) devices. The GaN-based devices thus appear promising for a wide range of chemical, biological, combustion gas, polar liquid, strain and high temperature pressure-sensing applications. In addition, the sensors are compatible with high bit-rate wireless communication systems that facilitate their use in remote arrays.

Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons

PubMed Central

Chang, Ye; Hui, Zhipeng; Wang, Xiayu; Qu, Hemi; Pang, Wei

2018-01-01

In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET) and a film bulk acoustic resonator (FBAR). We investigate their sensing characteristics using polar and nonpolar organic compounds, and demonstrate that polarity has a significant effect on the response of the Si-NR FET sensor, and only a minor effect on the FBAR sensor. In this dual-mode system, qualitative discrimination can be achieved by analyzing polarity with the Si-NR FET and quantitative concentration information can be obtained using a polymer-coated FBAR with a detection limit at the ppm level. The complementary performance of the sensing elements provides higher analytical efficiency. Additionally, a dual mixture of two types of freons (CFC-113 and HCFC-141b) is further analyzed with the dual-mode gas sensor. Owing to the small size and complementary metal-oxide semiconductor (CMOS)-compatibility of the system, the dual-mode gas sensor shows potential as a portable integrated sensing system for the analysis of gas mixtures in the future. PMID:29370109

Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons.

PubMed

Chang, Ye; Hui, Zhipeng; Wang, Xiayu; Qu, Hemi; Pang, Wei; Duan, Xuexin

2018-01-25

In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET) and a film bulk acoustic resonator (FBAR). We investigate their sensing characteristics using polar and nonpolar organic compounds, and demonstrate that polarity has a significant effect on the response of the Si-NR FET sensor, and only a minor effect on the FBAR sensor. In this dual-mode system, qualitative discrimination can be achieved by analyzing polarity with the Si-NR FET and quantitative concentration information can be obtained using a polymer-coated FBAR with a detection limit at the ppm level. The complementary performance of the sensing elements provides higher analytical efficiency. Additionally, a dual mixture of two types of freons (CFC-113 and HCFC-141b) is further analyzed with the dual-mode gas sensor. Owing to the small size and complementary metal-oxide semiconductor (CMOS)-compatibility of the system, the dual-mode gas sensor shows potential as a portable integrated sensing system for the analysis of gas mixtures in the future.

Photoacoustic Spectroscopy with Quantum Cascade Lasers for Trace Gas Detection

PubMed Central

Elia, Angela; Di Franco, Cinzia; Lugarà, Pietro Mario; Scamarcio, Gaetano

2006-01-01

Various applications, such as pollution monitoring, toxic-gas detection, non invasive medical diagnostics and industrial process control, require sensitive and selective detection of gas traces with concentrations in the parts in 109 (ppb) and sub-ppb range. The recent development of quantum-cascade lasers (QCLs) has given a new aspect to infrared laser-based trace gas sensors. In particular, single mode distributed feedback QCLs are attractive spectroscopic sources because of their excellent properties in terms of narrow linewidth, average power and room temperature operation. In combination with these laser sources, photoacoustic spectroscopy offers the advantage of high sensitivity and selectivity, compact sensor platform, fast time-response and user friendly operation. This paper reports recent developments on quantum cascade laser-based photoacoustic spectroscopy for trace gas detection. In particular, different applications of a photoacoustic trace gas sensor employing a longitudinal resonant cell with a detection limit on the order of hundred ppb of ozone and ammonia are discussed. We also report two QC laser-based photoacoustic sensors for the detection of nitric oxide, for environmental pollution monitoring and medical diagnostics, and hexamethyldisilazane, for applications in semiconductor manufacturing process.

NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors

PubMed Central

Akamatsu, Takafumi; Itoh, Toshio; Izu, Noriya; Shin, Woosuck

2013-01-01

Semiconductor-based gas sensors that use n-type WO3 or p-type Co3O4 powder were fabricated and their gas sensing properties toward NO2 or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO3-based sensor increased on exposure to NO2 and NO. On the other hand, the resistance of the Co3O4-based sensor varied depending on the operating temperature and the gas species. The chemical states of the surface of WO3 or those of the Co3O4 powder on exposure to 1 ppm NO2 and NO were investigated by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy. No clear differences between the chemical states of the metal oxide surface exposed to NO2 or NO could be detected from the DRIFT spectra. PMID:24048338

Development of High Temperature Gas Sensor Technology

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Chen, Liang-Yu; Neudeck, Philip G.; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai; Zhou, Huan-Jun

1997-01-01

The measurement of engine emissions is important for their monitoring and control. However, the ability to measure these emissions in-situ is limited. We are developing a family of high temperature gas sensors which are intended to operate in harsh environments such as those in an engine. The development of these sensors is based on progress in two types of technology: (1) The development of SiC-based semiconductor technology; and (2) Improvements in micromachining and microfabrication technology. These technologies are being used to develop point-contact sensors to measure gases which are important in emission control especially hydrogen, hydrocarbons, nitrogen oxides, and oxygen. The purpose of this paper is to discuss the development of this point-contact sensor technology. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. Of particular importance is sensor sensitivity, selectivity, and stability in long-term, high temperature operation. An overview is presented of each sensor type with an evaluation of its stage of development. It is concluded that this technology has significant potential for use in engine applications but further development is necessary.

Electronic properties of NH{sub 4}-adsorbed graphene nanoribbon as a promising candidate for a gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harada, Naoki, E-mail: harada.naoki@jp.fujitsu.com; Sato, Shintaro

2016-05-15

The electronic properties of NH{sub 4}-adsorbed N = 7 armchair graphene nanoribbons (AGNRs) were theoretically investigated using self-consistent atomistic simulations to explore the feasibility of AGNRs as a gas sensing material. Whereas a pristine AGNR has a finite band gap and is an intrinsic semiconductor, an NH{sub 4}-adsorbed AGNR exhibits heavily doped n-type properties similar to a graphene sheet with the molecules adsorbed. The electric characteristics of a back-gated AGNR gas sensor were also simulated and the drain current changed exponentially with increasing number of adsorbed molecules. We may conclude that an AGNR is promising as a highly sensitive gas-sensingmore » material with large outputs.« less

Application of gas sensor arrays in assessment of wastewater purification effects.

PubMed

Guz, Łukasz; Łagód, Grzegorz; Jaromin-Gleń, Katarzyna; Suchorab, Zbigniew; Sobczuk, Henryk; Bieganowski, Andrzej

2014-12-23

A gas sensor array consisting of eight metal oxide semiconductor (MOS) type gas sensors was evaluated for its ability for assessment of the selected wastewater parameters. Municipal wastewater was collected in a wastewater treatment plant (WWTP) in a primary sedimentation tank and was treated in a laboratory-scale sequential batch reactor (SBR). A comparison of the gas sensor array (electronic nose) response to the standard physical-chemical parameters of treated wastewater was performed. To analyze the measurement results, artificial neural networks were used. E-nose-gas sensors array and artificial neural networks proved to be a suitable method for the monitoring of treated wastewater quality. Neural networks used for data validation showed high correlation between the electronic nose readouts and: (I) chemical oxygen demand (COD) (r = 0.988); (II) total suspended solids (TSS) (r = 0.938); (III) turbidity (r = 0.940); (IV) pH (r = 0.554); (V) nitrogen compounds: N-NO3 (r = 0.958), N-NO2 (r = 0.869) and N-NH3 (r = 0.978); (VI) and volatile organic compounds (VOC) (r = 0.987). Good correlation of the abovementioned parameters are observed under stable treatment conditions in a laboratory batch reactor.

Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

NASA Technical Reports Server (NTRS)

Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

2012-01-01

A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun

1994-01-01

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Crystalline mesoporous tungsten oxide nanoplate monoliths synthesized by directed soft template method for highly sensitive NO{sub 2} gas sensor applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoa, Nguyen Duc, E-mail: ndhoa@itims.edu.vn; Duy, Nguyen Van; Hieu, Nguyen Van, E-mail: hieu@itims.edu.vn

2013-02-15

Graphical abstract: Display Omitted Highlights: ► Mesoporous WO{sub 3} nanoplate monoliths were obtained by direct templating synthesis. ► Enable effective accession of the analytic molecules for the sensor applications. ► The WO{sub 3} sensor exhibited a high performance to NO{sub 2} gas at low temperature. -- Abstract: Controllable synthesis of nanostructured metal oxide semiconductors with nanocrystalline size, porous structure, and large specific surface area is one of the key issues for effective gas sensor applications. In this study, crystalline mesoporous tungsten oxide nanoplate-like monoliths with high specific surface areas were obtained through instant direct-templating synthesis for highly sensitive nitrogen dioxidemore » (NO{sub 2}) sensor applications. The copolymer soft template was converted into a solid carbon framework by heat treatment in an inert gas prior to calcinations in air to sustain the mesoporous structure of tungsten oxide. The multidirectional mesoporous structures of tungsten oxide with small crystalline size, large specific surface area, and superior physical characteristics enabled the rapid and effective accession of analytic gas molecules. As a result, the sensor response was enhanced and the response and recovery times were reduced, in which the mesoporous tungsten oxide based gas sensor exhibited a superior response of 21,155% to 5 ppm NO{sub 2}. In addition, the developed sensor exhibited selective detection of low NO{sub 2} concentration in ammonia and ethanol at a low temperature of approximately 150 °C.« less

Characterization and calibration of gas sensor systems at ppb level—a versatile test gas generation system

NASA Astrophysics Data System (ADS)

Leidinger, Martin; Schultealbert, Caroline; Neu, Julian; Schütze, Andreas; Sauerwald, Tilman

2018-01-01

This article presents a test gas generation system designed to generate ppb level gas concentrations from gas cylinders. The focus is on permanent gases and volatile organic compounds (VOCs) for applications like indoor and outdoor air quality monitoring or breath analysis. In the design and the setup of the system, several issues regarding handling of trace gas concentrations have been considered, addressed and tested. This concerns not only the active fluidic components (flow controllers, valves), which have been chosen specifically for the task, but also the design of the fluidic tubing regarding dead volumes and delay times, which have been simulated for the chosen setup. Different tubing materials have been tested for their adsorption/desorption characteristics regarding naphthalene, a highly relevant gas for indoor air quality monitoring, which has generated high gas exchange times in a previous gas mixing system due to long time adsorption/desorption effects. Residual gas contaminations of the system and the selected carrier air supply have been detected and quantified using both an analytical method (GC-MS analysis according to ISO 16000-6) and a metal oxide semiconductor gas sensor, which detected a maximum contamination equivalent to 28 ppb of carbon monoxide. A measurement strategy for suppressing even this contamination has been devised, which allows the system to be used for gas sensor and gas sensor system characterization and calibration in the low ppb concentration range.

Preparation of titanium dioxide films by sol-gel route for gas sensors

NASA Astrophysics Data System (ADS)

Schiopu, Vasilica; Matei, Alina; Cernica, Ileana; Podaru, Cecilia

2009-01-01

Semiconductor oxides such as SnO2, TiO2, WO3, ZnO2 etc. have been shown to be useful as gas sensor materials for monitoring various pollutant gases like H2S, NOx, NH3 etc. In this work, we would like to present the preparation of titanium dioxide films for gas sensor application, via the sol-gel technique. The coating solution was prepared by using titanium isopropoxide precursor, which was hydrolyzed with distilled water under the catalytic effect of different acids (HNO3, HCl or CH3COOH). Titanium dioxide films have been deposited using spin coating method and then synthesized at different temperatures. Fourier transform infrared spectroscopy observation has been used to analyze the sol-gel process. The morphology and the structure of the thin films were analyzed.

Highly Sensitive Bulk Silicon Chemical Sensors with Sub-5 nm Thin Charge Inversion Layers.

PubMed

Fahad, Hossain M; Gupta, Niharika; Han, Rui; Desai, Sujay B; Javey, Ali

2018-03-27

There is an increasing demand for mass-producible, low-power gas sensors in a wide variety of industrial and consumer applications. Here, we report chemical-sensitive field-effect-transistors (CS-FETs) based on bulk silicon wafers, wherein an electrostatically confined sub-5 nm thin charge inversion layer is modulated by chemical exposure to achieve a high-sensitivity gas-sensing platform. Using hydrogen sensing as a "litmus" test, we demonstrate large sensor responses (>1000%) to 0.5% H 2 gas, with fast response (<60 s) and recovery times (<120 s) at room temperature and low power (<50 μW). On the basis of these performance metrics as well as standardized benchmarking, we show that bulk silicon CS-FETs offer similar or better sensing performance compared to emerging nanostructures semiconductors while providing a highly scalable and manufacturable platform.

Meat Quality Assessment by Electronic Nose (Machine Olfaction Technology)

PubMed Central

Ghasemi-Varnamkhasti, Mahdi; Mohtasebi, Seyed Saeid; Siadat, Maryam; Balasubramanian, Sundar

2009-01-01

Over the last twenty years, newly developed chemical sensor systems (so called “electronic noses”) have made odor analyses possible. These systems involve various types of electronic chemical gas sensors with partial specificity, as well as suitable statistical methods enabling the recognition of complex odors. As commercial instruments have become available, a substantial increase in research into the application of electronic noses in the evaluation of volatile compounds in food, cosmetic and other items of everyday life is observed. At present, the commercial gas sensor technologies comprise metal oxide semiconductors, metal oxide semiconductor field effect transistors, organic conducting polymers, and piezoelectric crystal sensors. Further sensors based on fibreoptic, electrochemical and bi-metal principles are still in the developmental stage. Statistical analysis techniques range from simple graphical evaluation to multivariate analysis such as artificial neural network and radial basis function. The introduction of electronic noses into the area of food is envisaged for quality control, process monitoring, freshness evaluation, shelf-life investigation and authenticity assessment. Considerable work has already been carried out on meat, grains, coffee, mushrooms, cheese, sugar, fish, beer and other beverages, as well as on the odor quality evaluation of food packaging material. This paper describes the applications of these systems for meat quality assessment, where fast detection methods are essential for appropriate product management. The results suggest the possibility of using this new technology in meat handling. PMID:22454572

Sulfur mustard gas adsorption on ZnO fullerene-like nanocage: Quantum chemical calculations

NASA Astrophysics Data System (ADS)

Kazemi, Mohammad; Rad, Ali Shokuhi

2017-06-01

In the present study, we used density functional theory calculations (at B3LYP and ωB97XD Levels) to search on the adsorption of Sulfur mustard gas (defined as mustard gas) on the surface of fullerene-like ZnO nanocage as a semiconductor. We found three different configurations of adsorbed gas on the surface of this nanostructure semiconductor. The values of adsorption energy of mustard gas are calculated in the range of -144∼ -200 kJ/mol with enthalpies in the range of -132∼-195 kJ/mol and Gibbs free energies in the range of -88∼-144 kJ/mol (T = 298 K, based on ωB97XD level), which indicate exothermic and spontaneous chemisorption. For all geometries, we calculated geometry parameters by taking into account the charge analysis and frontier molecular orbital study. The result of this study can be a support for next studies to develop new nanomaterials as adsorbent/sensor for mustard gas.

An optically detectable CO2 sensor utilizing polyethylenimine and starch functionalized InGaN/GaN multiple quantum wells

NASA Astrophysics Data System (ADS)

Chen, Y. C.; Shih, H. Y.; Chen, J. Y.; Tan, W. J.; Chen, Y. F.

2013-07-01

An optically detectable gas sensor based on the high surface sensitivity of functionalized polyethylenimine/starch In0.15Ga0.85N/GaN strained semiconductor multiple quantum wells (MQWs) has been developed. Due to the excellent piezoelectricity of the MQWs, the change of surface charges caused by chemical interaction can introduce a strain and induce an internal field. In turn, it tilts the energy levels of the MQWs and modifies the optical properties. Through the measurement of the changes in photoluminescence as well as Raman scattering spectra under different concentrations of carbon dioxide gas, we demonstrate the feasibility and high sensitivity of the sensors derived from our methodology.

Review of Portable and Low-Cost Sensors for the Ambient Air Monitoring of Benzene and Other Volatile Organic Compounds

PubMed Central

Kok, Gertjan; Persijn, Stefan; Sauerwald, Tilman

2017-01-01

This article presents a literature review of sensors for the monitoring of benzene in ambient air and other volatile organic compounds. Combined with information provided by stakeholders, manufacturers and literature, the review considers commercially available sensors, including PID-based sensors, semiconductor (resistive gas sensors) and portable on-line measuring devices as for example sensor arrays. The bibliographic collection includes the following topics: sensor description, field of application at fixed sites, indoor and ambient air monitoring, range of concentration levels and limit of detection in air, model descriptions of the phenomena involved in the sensor detection process, gaseous interference selectivity of sensors in complex VOC matrix, validation data in lab experiments and under field conditions. PMID:28657595

Review of Portable and Low-Cost Sensors for the Ambient Air Monitoring of Benzene and Other Volatile Organic Compounds.

PubMed

Spinelle, Laurent; Gerboles, Michel; Kok, Gertjan; Persijn, Stefan; Sauerwald, Tilman

2017-06-28

This article presents a literature review of sensors for the monitoring of benzene in ambient air and other volatile organic compounds. Combined with information provided by stakeholders, manufacturers and literature, the review considers commercially available sensors, including PID-based sensors, semiconductor (resistive gas sensors) and portable on-line measuring devices as for example sensor arrays. The bibliographic collection includes the following topics: sensor description, field of application at fixed sites, indoor and ambient air monitoring, range of concentration levels and limit of detection in air, model descriptions of the phenomena involved in the sensor detection process, gaseous interference selectivity of sensors in complex VOC matrix, validation data in lab experiments and under field conditions.

Study of non-stoichiometric BaSrTiFeO3 oxide dedicated to semiconductor gas sensors

NASA Astrophysics Data System (ADS)

Fasquelle, D.; Verbrugghe, N.; Deputier, S.

2016-11-01

Developing instrumentation systems compatible with the European RoHS directive (restriction of hazardous substances) to monitor our environment is of great interest for our society. Our research therefore aims at developing innovating integrated systems of detection dedicated to the characterization of various environmental exposures. These systems, which integrate new gas sensors containing lead-free oxides, are dedicated to the detection of flammable and toxic gases. We have firstly chosen to study semiconductor gas sensors implemented with lead-free oxides in view to develop RoHS devices. Therefore thick films deposited by spin-coating and screen-printing have been chosen for their robustness, ease to realize and ease to finally obtain cost-effective sensors. As crystalline defects and ionic vacancies are of great interest for gas detection, we have decided to study a non-stoichiometric composition of the BaSrTiFeO3 sensible oxide. Nonstoichiometric BaSrTiFeO3 lead-free oxide thick films were deposited by screen-printing on polycrystalline AFO3 substrates covered by a layer of Ag-Pd acting as bottom electrode. The physical characterizations have revealed a crystalline structure mainly composed of BaTiO3 pseudo-cubic phase and Ba4Ti12O27 monoclinic phase for the powder, and a porous microstructure for the thick films. When compared to a BSTF thick film with a stoichiometric composition, a notable increase in the BSTF dielectric constant value was observed when taking into account of a similar microstructure and grain size. The loss tangent mean value varies more softly for the non-stoichiometric BaSrTiFeO3 films than for the perovskite BSTF film as tanδ decreases from 0.45 to 0.04 when the frequency increases from 100 Hz to 1 MHz.

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

NASA Astrophysics Data System (ADS)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

Hydrogen gas sensors using a thin Ta2O5 dielectric film

NASA Astrophysics Data System (ADS)

Kim, Seongjeen

2014-12-01

A capacitive-type hydrogen gas sensor with a MIS (metal-insulator-semiconductor) structure was investigated for high-temperature applications. In this work, a tantalum oxide (Ta2O5) layer of tens of nanometers in thickness formed by oxidizing tantalum film in rapid thermal processing (RTP) was exploited with the purpose of sensitivity improvement. Silicon carbide (SiC), which is good even at high temperatures over 500 °C, was used as the substrate. We fabricated sensors composed of Pd/Ta2O5/SiC, and the dependences of the capacitance response properties and the I-V characteristics on the hydrogen concentration were analyzed from the temperature range of room temperature to 500 °C. As a result, our hydrogen sensor showed promising performance with respect to the sensitivity and the adaptability at high temperature.

Low Power Operation of Temperature-Modulated Metal Oxide Semiconductor Gas Sensors.

PubMed

Burgués, Javier; Marco, Santiago

2018-01-25

Mobile applications based on gas sensing present new opportunities for low-cost air quality monitoring, safety, and healthcare. Metal oxide semiconductor (MOX) gas sensors represent the most prominent technology for integration into portable devices, such as smartphones and wearables. Traditionally, MOX sensors have been continuously powered to increase the stability of the sensing layer. However, continuous power is not feasible in many battery-operated applications due to power consumption limitations or the intended intermittent device operation. This work benchmarks two low-power, duty-cycling, and on-demand modes against the continuous power one. The duty-cycling mode periodically turns the sensors on and off and represents a trade-off between power consumption and stability. On-demand operation achieves the lowest power consumption by powering the sensors only while taking a measurement. Twelve thermally modulated SB-500-12 (FIS Inc. Jacksonville, FL, USA) sensors were exposed to low concentrations of carbon monoxide (0-9 ppm) with environmental conditions, such as ambient humidity (15-75% relative humidity) and temperature (21-27 °C), varying within the indicated ranges. Partial Least Squares (PLS) models were built using calibration data, and the prediction error in external validation samples was evaluated during the two weeks following calibration. We found that on-demand operation produced a deformation of the sensor conductance patterns, which led to an increase in the prediction error by almost a factor of 5 as compared to continuous operation (2.2 versus 0.45 ppm). Applying a 10% duty-cycling operation of 10-min periods reduced this prediction error to a factor of 2 (0.9 versus 0.45 ppm). The proposed duty-cycling powering scheme saved up to 90% energy as compared to the continuous operating mode. This low-power mode may be advantageous for applications that do not require continuous and periodic measurements, and which can tolerate slightly higher prediction errors.

Quantitative measuring system for combustible gas with audible tick rate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Batz, J.E.

1979-09-04

Northern Illinois Gas Co.'s new gas-detection instrument is lightweight, portable, easy to use, and in compliance with industry standards as an intrinsically safe device. The instrument uses a semiconductor gas-sensor element energyzed with the regulated voltage source. Placed in the atmosphere to be tested, the detector generates a signal representative of the concentration of natural gas in the air. A meter displays the signal to determine whether the area is hazardous; a variable-repetition-rate blocking oscillator feeding a speaker responds to the signal, generating an audible tick rate useful in locating a leak.

Development of a detection sensor for lethal H2S gas.

PubMed

Park, Young-Ho; Kim, Yong-Jae; Lee, Chang-Seop

2012-07-01

The gas which may be lethal to human body with short-term exposure in common industrial fields or workplaces in LAB may paralyze the olfactory sense and impose severe damages to central nervous system and lung. This study is concerned with the gas sensor which allows individuals to avoid the toxic gas that may be generated in the space with residues of organic wastes under 50 degrees C or above. This study investigates response and selectivity of the sensor to hydrogen sulfide gas with operating temperatures and catalysts. The thick-film semiconductor sensor for hydrogen sulfide gas detection was fabricated WO3/SnO2 prepared by sol-gel and precipitation methods. The nanosized SnO2 powder mixed with the various metal oxides (WO3, TiO2, and ZnO) and doped with transition metals (Au, Ru, Pd Ag and In). Particle sizes, specific surface areas and phases of sensor materials were investigated by SEM, BET and XRD analyses. The metal-WO3/SnO2 thick films were prepared by screen-printing method. The measured response to hydrogen sulfide gas is defined as the ratio (Ra/R,) of the resistance of WO3ISnO2 film in air to the resistance of WO3/SnO2 film in a hydrogen sulfide gas. It was shown that the highest response and selectivity of the sensor for hydrogen sulfide by doping with 1 wt% Ru and 10 wt% WO3 to SnO2 at the optimum operating temperature of 200 degrees C.

Probing the Hydrogen Enhanced Near-Field Emission of ITO without a Vacuum-Gap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poole, Jacob L.; Yu, Yang; Ohodnicki, Paul R.

In-situ monitoring of the multi-component gas streams in high temperature energy conversion devices offer the promises to higher efficiency via improved understanding of the chemical environments during device operation. While conventional resistive based metal oxide semiconductor gas sensors suffer from strong cross-sensitivity, optical sensing approaches offer intrinsic advantages to achieve gas selectivity based on wavelength specific interactions. This manuscript describes a novel method to achieve multicomponent gas sensing during gas exposure of H2, CO2, CH4and CO in humid high temperature environments. A single sensor element comprised of a perovskite La0.3Sr0.7TiO3(LSTO) oxide thin film layer coated on silica optical fiber wasmore » used. The sensing responses consisted of two wavelength-specific near infrared (NIR) mechanisms, namely broadband absorption associated with the metal oxide layer, and wavelength localized thermal emission responses associated with the hydroxyl defects within the silica fiber. Principal component analysis (PCA) was applied to couple the two mechanisms to achieve selective gas identification. Successful discrimination of H2and CO2on a single fiber sensor was achieved, where the results are both stable and reversible. This design demonstrates that by coupling multiple optical mechanisms on a single oxide coated fiber sensor, simple platforms can also achieve multi-component sensing functionality without the added complexity of a sensor array. Thus, it suggests a new approach to construct simple, robust and functional sensor designs capable of gas discrimination and quantification in multi-component gas streams.« less

Handheld chemiresistive gas sensor readout system

NASA Astrophysics Data System (ADS)

Joubert, Trudi-Heleen; du Toit, Jurie; Mkwakikunga, Bonex; Bosscha, Peter

2016-02-01

Low-cost and non-invasive diabetes diagnosis is increasingly important [1], and this paper presents a handheld readout system for chemiresistive gas sensors in a breath acetone diagnostic application. The sensor contains reference and detection devices, used for the detection of gas concentration. Fabrication is by dropcasting a metaloxide nanowire solution onto gold interdigitated electrodes, which had been manufactured on silicon. The resulting layer is a wide bandgap n-type semiconductor material sensitive to acetone, producing a change in resistance between the electrode terminals [2]. Chemiresistive sensors typically require temperatures of 300-500 °C, while variation of sensing temperature is also employed for selective gas detection. The nano-structured functional material requires low temperatures due to large surface area, but heating is still required for acceptable recovery kinetics. Furthermore, UV illumination improves the sensor recovery [3], and is implemented in this system. Sensor resistances range from 100 Ω to 50 MΩ, while the sensor response time require a sampling frequency of 10Hz. Sensor resistance depends on temperature, humidity, and barometric pressure. The GE CC2A23 temperature sensor is used over a range of -10°C to 60°C, the Honeywell HIH5031 humidity sensor operates up to 85% over this temperature range, and the LPS331AP barometric pressure sensor measures up to 1.25 bar. Honeywell AWM43300V air flow sensors monitor the flow rate up to 1000 sccm. An LCD screen displays all the sensor data, as well as real time date and time, while all measurements are also logged in CSV-format. The system operates from a rechargeable battery.

Gas Selectivity Control in Co3O4 Sensor via Concurrent Tuning of Gas Reforming and Gas Filtering using Nanoscale Hetero-Overlayer of Catalytic Oxides.

PubMed

Jeong, Hyun-Mook; Jeong, Seong-Yong; Kim, Jae-Hyeok; Kim, Bo-Young; Kim, Jun-Sik; Abdel-Hady, Faissal; Wazzan, Abdulaziz A; Al-Turaif, Hamad Ali; Jang, Ho Won; Lee, Jong-Heun

2017-11-29

Co 3 O 4 sensors with a nanoscale TiO 2 or SnO 2 catalytic overlayer were prepared by screen-printing of Co 3 O 4 yolk-shell spheres and subsequent e-beam evaporation of TiO 2 and SnO 2 . The Co 3 O 4 sensors with 5 nm thick TiO 2 and SnO 2 overlayers showed high responses (resistance ratios) to 5 ppm xylene (14.5 and 28.8) and toluene (11.7 and 16.2) at 250 °C with negligible responses to interference gases such as ethanol, HCHO, CO, and benzene. In contrast, the pure Co 3 O 4 sensor did not show remarkable selectivity toward any specific gas. The response and selectivity to methylbenzenes and ethanol could be systematically controlled by selecting the catalytic overlayer material, varying the overlayer thickness, and tuning the sensing temperature. The significant enhancement of the selectivity for xylene and toluene was attributed to the reforming of less reactive methylbenzenes into more reactive and smaller species and oxidative filtering of other interference gases, including ubiquitous ethanol. The concurrent control of the gas reforming and oxidative filtering processes using a nanoscale overlayer of catalytic oxides provides a new, general, and powerful tool for designing highly selective and sensitive oxide semiconductor gas sensors.

Two-Dimensional Atomic-Layered Alloy Junctions for High-Performance Wearable Chemical Sensor.

PubMed

Cho, Byungjin; Kim, Ah Ra; Kim, Dong Jae; Chung, Hee-Suk; Choi, Sun Young; Kwon, Jung-Dae; Park, Sang Won; Kim, Yonghun; Lee, Byoung Hun; Lee, Kyu Hwan; Kim, Dong-Ho; Nam, Jaewook; Hahm, Myung Gwan

2016-08-03

We first report that two-dimensional (2D) metal (NbSe2)-semiconductor (WSe2)-based flexible, wearable, and launderable gas sensors can be prepared through simple one-step chemical vapor deposition of prepatterned WO3 and Nb2O5. Compared to a control device with a Au/WSe2 junction, gas-sensing performance of the 2D NbSe2/WSe2 device was significantly enhanced, which might have resulted from the formation of a NbxW1-xSe2 transition alloy junction lowering the Schottky barrier height. This would make it easier to collect charges of channels induced by molecule adsorption, improving gas response characteristics toward chemical species including NO2 and NH3. 2D NbSe2/WSe2 devices on a flexible substrate provide gas-sensing properties with excellent durability under harsh bending. Furthermore, the device stitched on a T-shirt still performed well even after conventional cleaning with a laundry machine, enabling wearable and launderable chemical sensors. These results could pave a road toward futuristic gas-sensing platforms based on only 2D materials.

Ultrasensitive NO2 gas sensors using hybrid heterojunctions of multi-walled carbon nanotubes and on-chip grown SnO2 nanowires

NASA Astrophysics Data System (ADS)

Nguyet, Quan Thi Minh; Van Duy, Nguyen; Manh Hung, Chu; Hoa, Nguyen Duc; Van Hieu, Nguyen

2018-04-01

Hybrid heterojunction devices are designed for ultrahigh response to NO2 toxic gas. The devices were constructed by assembling multi-walled carbon nanotubes (MWCNTs) on a microelectrode chip bridged bare Pt-electrode and a Pt-electrode with pre-grown SnO2 nanowires (NWs). All heterojunction devices were realized using different types of MWCNTs, which exhibit ultrahigh response to sub-ppm NO2 gas at 50 °C operated in the reverse bias mode. The response to 1 ppm NO2 gas reaches 11300, which is about 100 times higher than that of a back-to-back heterojunction device fabricated from SnO2 NWs and MWCNTs. In addition, the present device exhibits an ultralow detection limit of about 0.68 ppt. The modulation of trap-assisted tunneling current under reverse bias is the main gas-sensing mechanism. This principle device presents a concept for developing gas sensors made of a hybrid between semiconductor metal oxide NWs and CNTs.

Gas-Sensing Performance of M-Doped CuO-Based Thin Films Working at Different Temperatures upon Exposure to Propane

PubMed Central

Rydosz, Artur; Szkudlarek, Aleksandra

2015-01-01

Cupric oxide (CuO) thin films are promising materials in gas sensor applications. The CuO-based gas sensors behaved as p-type semiconductors and can be used as part of an e-nose or smart sensor array for breath analysis. The authors present the investigation results on M-doped CuO-based (M = Ag, Au, Cr, Pd, Pt, Sb, Si) sensors working at various temperatures upon exposure to a low concentration of C3H8, which can be found in exhaled human breath, and it can be considered as a one of the biomarkers of several diseases. The films have been deposited in magnetron sputtering technology on low temperature cofired ceramics substrates. The results of the gas sensors’ response are also presented and discussed. The Cr:CuO-based structure, annealed at 400 °C for 4 h in air, showed the highest sensor response, of the order of 2.7 at an operation temperature of 250 °C. The response and recovery time(s) were 10 s and 24 s, respectively. The results show that the addition of M-dopants in the cupric oxide films effectively act as catalysts in propane sensors and improve the gas sensing properties. The films’ phase composition, microstructure and surface topography have been assessed by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) methods. PMID:26287204

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

PubMed Central

Hou, Sihui; Zhuang, Xinming; Yang, Zuchong

2018-01-01

Nitrogen dioxide (NO2) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance. PMID:29596331

Metal nanostructures: from clusters to nanocatalysis and sensors

NASA Astrophysics Data System (ADS)

Smirnov, B. M.

2017-12-01

The properties of metal clusters and nanostructures composed of them are reviewed. Various existing methods for the generation of intense beams of metal clusters and their subsequent conversion into nanostructures are compared. Processes of the flow of a buffer gas with active molecules through a nanostructure are analyzed as a basis of using nanostructures for catalytic applications. The propagation of an electric signal through a nanostructure is studied by analogy with a macroscopic metal. An analysis is given of how a nanostructure changes its resistance as active molecules attach to its surface and are converted into negative ions. These negative ions induce the formation of positively charged vacancies inside the metal conductor and attract the vacancies to together change the resistance of the metal nanostructure. The physical basis is considered for using metal clusters and nanostructures composed of them to create new materials in the form of a porous metal film on the surface of an object. The fundamentals of nanocatalysis are reviewed. Semiconductor conductometric sensors consisting of bound nanoscale grains or fibers acting as a conductor are compared with metal sensors conducting via a percolation cluster, a fractal fiber, or a bunch of interwoven nanofibers formed in superfluid helium. It is shown that sensors on the basis of metal nanostructures are characterized by a higher sensitivity than semiconductor ones, but are not selective. Measurements using metal sensors involve two stages, one of which measures to high precision the attachment rate of active molecules to the sensor conductor, and in the other one the surface of metal nanostructures is cleaned from the attached molecules using a gas discharge plasma (in particular, capillary discharge) with a subsequent chromatography analysis for products of cleaning.

Gateless AlGaN/GaN HEMT response to block co-polymers

NASA Astrophysics Data System (ADS)

Kang, B. S.; Louche, G.; Duran, R. S.; Gnanou, Y.; Pearton, S. J.; Ren, F.

2004-05-01

Gateless AlGaN/GaN high electron mobility transistor (HEMT) structures exhibit large changes in source-drain current upon exposing the gate region to various block co-polymer solutions. The polar nature of some of these polymer chains lead to a change of surface charges in gate region on the HEMT, producing a change in surface potential at the semiconductor/liquid interface. The nitride sensors appear to be promising for a wide range of chemical gas, combustion gas, liquid and strain sensing.

Nanocrystalline mesoporous SMO thin films prepared by sol gel process for MEMS-based hydrogen sensor

NASA Astrophysics Data System (ADS)

Gong, Jianwei; Fei, Weifeng; Seal, Sudipta; Chen, Quanfang

2004-01-01

MEMS based SnO2 gas sensor with sol gel synthesized mesoporous nanocrystalline (<10 nm) semiconductor thin (100~150 nm) film has been recently developed. The SnO2 nano film is fabricated with the combination of polymeric sol gel chemistry with block copolymers used for structure directing agents. The novel hydrogen sensor has a fast response time (1s) and quick recovery time (3s), as well as good sensitivity (about 90%), comparing to other hydrogen sensors developed. The improved capabilities are credited to the large surface to volume ratio of gas sensing thin film with nano sized porous surface topology, which can greatly increase the sensitivity even at relatively low working temperature. The gas sensing film is deposited onto a thin dielectric membrane of low thermal conductivity, which provides good thermal isolation between substrate and the gas-sensitive heated area on the membrane. In this way the power consumption can be kept very low. Since the fabrication process is completely compatible with IC industry, it makes mass production possible and greatly reduces the cost. The working temperature of the new sensor can be reduced as low as 100°C. The low working temperature posse advantages such as lower power consumption, lower thermal induced signal shift as well as safe detection in certain environments where temperature is strictly limited.

A titania nanotube-array room-temperature sensor for selective detection of hydrogen at low concentrations.

PubMed

Varghese, Oomman K; Mor, Gopal K; Grimes, Craig A; Paulose, Maggie; Mukherjee, Niloy

2004-09-01

A tremendous variation in electrical resistance, from the semiconductor to metallic range, has been observed in titania nanotube arrays at room temperature, approximately 25 degrees C, in the presence of < or = 1000 ppm hydrogen gas. The nanotube arrays are fabricated by anodizing titanium foil in an aqueous electrolyte solution containing hydrofluoric acid and acetic acid. Subsequently, the arrays are coated with a 10 nm layer of palladium by evaporation. Electrical contacts are made by sputtering a 2 mm diameter platinum disk atop the Pd-coated nanotube array. These sensors exhibit a resistance variation of the order of 10(4) in the presence of 100 ppm hydrogen at 25 degrees C. The sensors demonstrate complete reversibility, repeatability, high selectivity, negligible drift and wide dynamic range. The nanoscale geometry of the nanotubes, in particular the points of tube-to-tube contact, is believed to be responsible for the outstanding hydrogen gas sensitivities.

Metal Oxide Sensors for Electronic Noses and Their Application to Food Analysis

PubMed Central

Berna, Amalia

2010-01-01

Electronic noses (E-noses) use various types of electronic gas sensors that have partial specificity. This review focuses on commercial and experimental E-noses that use metal oxide semi-conductors. The review covers quality control applications to food and beverages, including determination of freshness and identification of contaminants or adulteration. Applications of E-noses to a wide range of foods and beverages are considered, including: meat, fish, grains, alcoholic drinks, non-alcoholic drinks, fruits, milk and dairy products, olive oils, nuts, fresh vegetables and eggs. PMID:22319332

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2011-01-01

A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.

Facile fabrication of a well-ordered porous Cu-doped SnO2 thin film for H2S sensing.

PubMed

Zhang, Shumin; Zhang, Pingping; Wang, Yun; Ma, Yanyun; Zhong, Jun; Sun, Xuhui

2014-09-10

Well-ordered Cu-doped and undoped SnO2 porous thin films with large specific surface areas have been fabricated on a desired substrate using a self-assembled soft template combined with simple physical cosputtering deposition. The Cu-doped SnO2 porous film gas sensor shows a significant enhancement in its sensing performance, including a high sensitivity, selectivity, and a fast response and recovery time. The sensitivity of the Cu-doped SnO2 porous sensor is 1 order of magnitude higher than that of the undoped SnO2 sensor, with average response and recovery times to 100 ppm of H2S of ∼ 10.1 and ∼ 42.4 s, respectively, at the optimal operating temperature of 180 °C. The well-defined porous sensors fabricated by the method also exhibit high reproducibility because of the accurately controlled fabrication process. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors with easy doping and multilayer porous nanostructure for practical sensing applications.

Gas Sensing Properties of ZnO-SnO2 Nanostructures.

PubMed

Chen, Weigen; Li, Qianzhu; Xu, Lingna; Zeng, Wen

2015-02-01

One-dimensional (1D) semiconductor metal oxide nanostructures have attracted increasing attention in electrochemistry, optics, magnetic, and gas sensing fields for the good properties. N-type low dimensional semiconducting oxides such as SnO2 and ZnO have been known for the detection of inflammable or toxic gases. In this paper, we fabricated the ZnO-SnO2 and SnO2 nanoparticles by hydrothermal synthesis. Microstructure characterization was performed using X-ray diffraction (XRD) and surface morphologies for both the pristine and doped samples were observed using field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). Then we made thin film gas sensor to study the gas sensing properties of ZnO-SnO2 and SnO2 gas sensor to H2 and CO. A systematic comparison study reveals an enhanced gas sensing performance for the sensor made of SnO2 and ZnO toward H2 and CO over that of the commonly applied undecorated SnO2 nanoparticles. The improved gas sensing properties are attributed to the size of grains and pronounced electron transfer between the compound nanostructures and the absorbed oxygen species as well as to the heterojunctions of the ZnO nanoparticles to the SnO2 nanoparticles, which provide additional reaction rooms. The results represent an advance of compound nanostructures in further enhancing the functionality of gas sensors, and this facile method could be applicable to many sensing materials, offering a new avenue and direction to detect gases of interest based on composite tin oxide nanoparticles.

Using the Semiconductors Materials of InSb-ZnTe System in Sensors for Gas Control

NASA Astrophysics Data System (ADS)

Shubenkova, E. G.

2017-04-01

The samples of thin film semiconductor compounds InSb, ZnTe and solid solutions based on them were obtained by vapor deposition of components on a dielectric substrate in a vacuum, followed by annealing and their surface properties in CO, O2 and NH3 gas atmospheres were investigated. Identification of the samples was carried out by X-ray diffraction techniques. In the temperature range 253 ÷ 403 K and a pressure range of 1÷12 Pa the gas adsorption was measured by piezoelectric microbalance technique. In order to establish the basic regularities of processes flowing on samples surface in addition to the electrophisical were used Infrared and Raman spectroscopic measurements. The resulting addiction “surface property - composition” is extreme and have allowed to determine solid solution InSb0,95-ZnTe0,05 as the most sensitive to the presence of ammonia, selective and this sample exhibits a negligible oxidation of surface.

Ultra-sensitive all-fibre photothermal spectroscopy with large dynamic range

PubMed Central

Jin, Wei; Cao, Yingchun; Yang, Fan; Ho, Hoi Lut

2015-01-01

Photothermal interferometry is an ultra-sensitive spectroscopic means for trace chemical detection in gas- and liquid-phase materials. Previous photothermal interferometry systems used free-space optics and have limitations in efficiency of light–matter interaction, size and optical alignment, and integration into photonic circuits. Here we exploit photothermal-induced phase change in a gas-filled hollow-core photonic bandgap fibre, and demonstrate an all-fibre acetylene gas sensor with a noise equivalent concentration of 2 p.p.b. (2.3 × 10−9 cm−1 in absorption coefficient) and an unprecedented dynamic range of nearly six orders of magnitude. The realization of photothermal interferometry with low-cost near infrared semiconductor lasers and fibre-based technology allows a class of optical sensors with compact size, ultra sensitivity and selectivity, applicability to harsh environment, and capability for remote and multiplexed multi-point detection and distributed sensing. PMID:25866015

Multi-functional properties of CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

2012-09-01

In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

A zirconium dioxide ammonia microsensor integrated with a readout circuit manufactured using the 0.18 μm CMOS process.

PubMed

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-03-15

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm.

Fabrication of tri metal oxides gas detector for lung inflammation

NASA Astrophysics Data System (ADS)

Othman, Farhad M.; Abdul-Hamead, Alaa A.; Aljanabi, Zena A.

2018-05-01

This paper describes the use of semiconductor gas sensor for detection of Carbon monoxide levels in exhaled human breath serving as breath marker of lung inflammation. In this research tri metal oxides were fabricated by simple chemical spray pyrolysis technique from mixtures of tow composition (Na2WO4: SnCl2 and Na2WO4, : 3 SnCl2) salts at concentration (0.1M), were fabricated on silicon substrate n-type (100) with thickness was about (625 µm) using water soluble as precursors at a substrate temperature (350 °C ±5), with spray distance (25 cm) and their gas sensing properties toward Carbon monoxide gas at concentration (10) ppm in air were investigated at room temperature, furthermore structural and morphology properties were inspecting. Experimental results show that the WSnO4 and SnO2 thin films were achieved from the used salts with thickness about (0.2 ± 0.05 nm), which make the sensor suitable for the detection of carbon monoxide levels in in exhaled human breath.

Vapor-solid growth of one-dimensional layer-structured gallium sulfide nanostructures.

PubMed

Shen, Guozhen; Chen, Di; Chen, Po-Chiang; Zhou, Chongwu

2009-05-26

Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga(2)O(3) heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.

Motor vehicle fuel analyzer

DOEpatents

Hoffheins, B.S.; Lauf, R.J.

1997-08-05

A gas detecting system is described for classifying the type of liquid fuel in a container or tank. The system includes a plurality of semiconductor gas sensors, each of which differs from the other in its response to various organic vapors. The system includes a means of processing the responses of the plurality of sensors such that the responses to any particular organic substance or mixture is sufficiently distinctive to constitute a recognizable ``signature``. The signature of known substances are collected and divided into two classes based on some other known characteristic of the substances. A pattern recognition system classifies the signature of an unknown substance with reference to the two user-defined classes, thereby classifying the unknown substance with regard to the characteristic of interest, such as its suitability for a particular use. 14 figs.

Motor vehicle fuel analyzer

DOEpatents

Hoffheins, Barbara S.; Lauf, Robert J.

1997-01-01

A gas detecting system for classifying the type of liquid fuel in a container or tank. The system includes a plurality of semiconductor gas sensors, each of which differs from the other in its response to various organic vapors. The system includes a means of processing the responses of the plurality of sensors such that the responses to any particular organic substance or mixture is sufficiently distinctive to constitute a recognizable "signature". The signature of known substances are collected and divided into two classes based on some other known characteristic of the substances. A pattern recognition system classifies the signature of an unknown substance with reference to the two user-defined classes, thereby classifying the unknown substance with regard to the characteristic of interest, such as its suitability for a particular use.

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique.

PubMed

Fong, Chien-Fu; Dai, Ching-Liang; Wu, Chyan-Chyi

2015-10-23

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm.

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique

PubMed Central

Fong, Chien-Fu; Dai, Ching-Liang; Wu, Chyan-Chyi

2015-01-01

A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm. PMID:26512671

A New Strategy for Humidity Independent Oxide Chemiresistors: Dynamic Self-Refreshing of In2 O3 Sensing Surface Assisted by Layer-by-Layer Coated CeO2 Nanoclusters.

PubMed

Yoon, Ji-Wook; Kim, Jun-Sik; Kim, Tae-Hyung; Hong, Young Jun; Kang, Yun Chan; Lee, Jong-Heun

2016-08-01

The humidity dependence of the gas sensing characteristics of metal oxide semiconductors has been one of the greatest obstacles for gas sensor applications during the last five decades because ambient humidity dynamically changes with the environmental conditions. Herein, a new and novel strategy is reported to eliminate the humidity dependence of the gas sensing characteristics of oxide chemiresistors via dynamic self-refreshing of the sensing surface affected by water vapor chemisorption. The sensor resistance and gas response of pure In2 O3 hollow spheres significantly change and deteriorate in humid atmospheres. In contrast, the humidity dependence becomes negligible when an optimal concentration of CeO2 nanoclusters is uniformly loaded onto In2 O3 hollow spheres via layer-by-layer (LBL) assembly. Moreover, In2 O3 sensors LBL-coated with CeO2 nanoclusters show fast response/recovery, low detection limit (500 ppb), and high selectivity to acetone even in highly humid conditions (relative humidity 80%). The mechanism underlying the dynamic refreshing of the In2 O3 sensing surfaces regardless of humidity variation is investigated in relation to the role of CeO2 and the chemical interaction among CeO2 , In2 O3 , and water vapor. This strategy can be widely used to design high performance gas sensors including disease diagnosis via breath analysis and pollutant monitoring. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and characterization of metal oxide semiconductors by a facile co-electroplating-annealing method and formation of ZnO/CuO pn heterojunctions with rectifying behavior

NASA Astrophysics Data System (ADS)

Turkdogan, Sunay; Kilic, Bayram

2018-01-01

We have developed a unique growth method and demonstrated the growth of CuO and ZnO semiconductor materials and the fabrication of their pn heterojunctions in ambient atmosphere. The pn heterojunctions were constructed using inherently p-type CuO and inherently n-type ZnO materials. Both p- and n-type semiconductors and pn heterojunctions were prepared using a simple but versatile growth method that relies on the transformation of electroplated Cu and Zn metals into CuO and ZnO semiconductors, respectively and is capable of a large-scale production desired in most of the applications. The structural, chemical, optical and electrical properties of the materials and junctions were investigated using various characterization methods and the results show that our growth method, materials and devices are quite promising to be utilized for various applications including but not limited to solar cells, gas/humidity sensors and photodetectors.

A Novel Solid State Non-Dispersive Infrared CO2 Gas Sensor Compatible with Wireless and Portable Deployment

PubMed Central

Gibson, Desmond; MacGregor, Calum

2013-01-01

This paper describes development of a novel mid-infrared light emitting diode (LED) and photodiode (PD) light source/detector combination and use within a non-dispersive infrared (NDIR) carbon dioxide gas sensor. The LED/PD based NDIR sensor provides fast stabilisation time (time required to turn on the sensor from cold, warm up, take and report a measurement, and power down again ≈1 second), longevity (>15 years), low power consumption and low cost. Described performance is compatible with “fit and forget” wireless deployed sensors in applications such as indoor air quality monitoring/control & energy conservation in buildings, transport systems, horticultural greenhouses and portable deployment for safety, industrial and medical applications. Fast stabilisation time, low intrinsic power consumption and cycled operation offer typical energy consumption per measurement of mJ's, providing extended operation using battery and/or energy harvesting strategies (measurement interval of ≈ 2 minutes provides >10 years operation from one AA battery). Specific performance data is provided in relation to measurement accuracy and noise, temperature performance, cross sensitivity, measurement range (two pathlength variants are described covering ambient through to 100% gas concentration), comparison with NDIR utilizing thermal source/pyroelectric light source/detector combination and compatibility with energy harvesting. Semiconductor based LED/PD processing together with injection moulded reflective optics and simple assembly provide a route to low cost high volume manufacturing. PMID:23760090

A novel solid state non-dispersive infrared CO2 gas sensor compatible with wireless and portable deployment.

PubMed

Gibson, Desmond; MacGregor, Calum

2013-05-29

This paper describes development of a novel mid-infrared light emitting diode (LED) and photodiode (PD) light source/detector combination and use within a non-dispersive infrared (NDIR) carbon dioxide gas sensor. The LED/PD based NDIR sensor provides fast stabilisation time (time required to turn on the sensor from cold, warm up, take and report a measurement, and power down again ≈1 second), longevity (>15 years), low power consumption and low cost. Described performance is compatible with "fit and forget" wireless deployed sensors in applications such as indoor air quality monitoring/control & energy conservation in buildings, transport systems, horticultural greenhouses and portable deployment for safety, industrial and medical applications. Fast stabilisation time, low intrinsic power consumption and cycled operation offer typical energy consumption per measurement of mJ's, providing extended operation using battery and/or energy harvesting strategies (measurement interval of ≈ 2 minutes provides >10 years operation from one AA battery). Specific performance data is provided in relation to measurement accuracy and noise, temperature performance, cross sensitivity, measurement range (two pathlength variants are described covering ambient through to 100% gas concentration), comparison with NDIR utilizing thermal source/pyroelectric light source/detector combination and compatibility with energy harvesting. Semiconductor based LED/PD processing together with injection moulded reflective optics and simple assembly provide a route to low cost high volume manufacturing.

Hermetic diode laser transmitter module

NASA Astrophysics Data System (ADS)

Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

1999-04-01

In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

Microfabricated Chemical Gas Sensors and Sensor Arrays for Aerospace Applications

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

2005-01-01

Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring, and fire detection. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors; 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity; 3) The development of high temperature semiconductors, especially silicon carbide. This presentation discusses the needs of space applications as well as the point-contact sensor technology and sensor arrays being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, nitrogen oxides (NO,), carbon monoxide, oxygen, and carbon dioxide are being developed as well as arrays for leak, fire, and emissions detection. Demonstrations of the technology will also be discussed. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection

PubMed Central

Maruyama, Satoshi; Hizawa, Takeshi; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-01-01

We developed a Fabry–Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout photocurrent was processed by an integrated source follower circuit. The movable film of the sensor was a 350-nm-thick polychloro-para-xylylene membrane with a diameter of 100 µm and an air gap of 300 nm. The linearity of the integrated source follower circuit was obtained. We demonstrated a gas response using 80-ppm ethanol detected by small membrane deformation of 50 nm, which resulted in an output-voltage change with the proposed high-efficiency transduction. PMID:29304011

Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection.

PubMed

Maruyama, Satoshi; Hizawa, Takeshi; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-01-05

We developed a Fabry-Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout photocurrent was processed by an integrated source follower circuit. The movable film of the sensor was a 350-nm-thick polychloro-para-xylylene membrane with a diameter of 100 µm and an air gap of 300 nm. The linearity of the integrated source follower circuit was obtained. We demonstrated a gas response using 80-ppm ethanol detected by small membrane deformation of 50 nm, which resulted in an output-voltage change with the proposed high-efficiency transduction.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Munish, E-mail: munishsharmahpu@live.com; Jamdagni, Pooja; Ahluwalia, P. K.

We present a first principle study of interaction of toxic gas molecules (NO, NO{sub 2} and SO{sub 2}) with monolayer MoSe{sub 2}. The predicted order of sensitivity of gas molecule is NO{sub 2} > SO{sub 2} > NO. Adsorbed molecules strongly influence the electronic behaviour of monolayer MoSe{sub 2} by inducing impurity levels in the vicinity of Fermi energy. NO and SO{sub 2} is found to induce p-type doping effect while semiconductor to metallic transitions occur on NO{sub 2} adsorption. Our findings may guide the experimentalist for fabricating sensor devices based on MoSe{sub 2} monolayer.

Electro-chemical sensors, sensor arrays and circuits

DOEpatents

Katz, Howard E.; Kong, Hoyoul

2014-07-08

An electro-chemical sensor includes a first electrode, a second electrode spaced apart from the first electrode, and a semiconductor channel in electrical contact with the first and second electrodes. The semiconductor channel includes a trapping material. The trapping material reduces an ability of the semiconductor channel to conduct a current of charge carriers by trapping at least some of the charge carriers to localized regions within the semiconductor channel. The semiconductor channel includes at least a portion configured to be exposed to an analyte to be detected, and the trapping material, when exposed to the analyte, interacts with the analyte so as to at least partially restore the ability of the semiconductor channel to conduct the current of charge carriers.

Co-doped phosphorene: Enhanced sensitivity of CO gas sensing

NASA Astrophysics Data System (ADS)

Lei, S. Y.; Luan, S.; Yu, H.

2018-03-01

First-principle calculation was carried out to systematically investigate carbon monoxide (CO) adsorption on pristine and cobalt (Co)-doped phosphorenes (Co-bP). Whether or not CO is adsorped, pristine phosphorene is a direct-band-gap semiconductor. However, the bandgap of Co-bP experiences direct-to-indirect transition after CO molecule adsorption, which will affect optical absorption considerably, implying that Co doping can enhance the sensitivity of phosphorene as a CO gas sensor. Moreover, Co doping can improve an adsorption energy of CO to 1.31 eV, as compared with pristine phosphorene (0.12 eV), also indicating that Co-bP is energetically favorable for CO gas sensing.

Micro Ethanol Sensors with a Heater Fabricated Using the Commercial 0.18 μm CMOS Process

PubMed Central

Liao, Wei-Zhen; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

The study investigates the fabrication and characterization of an ethanol microsensor equipped with a heater. The ethanol sensor is manufactured using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The sensor consists of a sensitive film, a heater and interdigitated electrodes. The sensitive film is zinc oxide prepared by the sol-gel method, and it is coated on the interdigitated electrodes. The heater is located under the interdigitated electrodes, and it is used to supply a working temperature to the sensitive film. The sensor needs a post-processing step to remove the sacrificial oxide layer, and to coat zinc oxide on the interdigitated electrodes. When the sensitive film senses ethanol gas, the resistance of the sensor generates a change. An inverting amplifier circuit is utilized to convert the resistance variation of the sensor into the output voltage. Experiments show that the sensitivity of the ethanol sensor is 0.35 mV/ppm. PMID:24072022

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique

PubMed Central

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature. PMID:22399944

Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique.

PubMed

Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

2009-01-01

This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature.

Micro ethanol sensors with a heater fabricated using the commercial 0.18 μm CMOS process.

PubMed

Liao, Wei-Zhen; Dai, Ching-Liang; Yang, Ming-Zhi

2013-09-25

The study investigates the fabrication and characterization of an ethanol microsensor equipped with a heater. The ethanol sensor is manufactured using the commercial 0.18 µm complementary metal oxide semiconductor (CMOS) process. The sensor consists of a sensitive film, a heater and interdigitated electrodes. The sensitive film is zinc oxide prepared by the sol-gel method, and it is coated on the interdigitated electrodes. The heater is located under the interdigitated electrodes, and it is used to supply a working temperature to the sensitive film. The sensor needs a post-processing step to remove the sacrificial oxide layer, and to coat zinc oxide on the interdigitated electrodes. When the sensitive film senses ethanol gas, the resistance of the sensor generates a change. An inverting amplifier circuit is utilized to convert the resistance variation of the sensor into the output voltage. Experiments show that the sensitivity of the ethanol sensor is 0.35 mV/ppm.

5A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process

PubMed Central

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-01-01

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm. PMID:23503294

Highly Sensitive Sensors Based on Metal-Oxide Nanocolumns for Fire Detection.

PubMed

Lee, Kwangjae; Shim, Young-Seok; Song, Young Geun; Han, Soo Deok; Lee, Youn-Sung; Kang, Chong-Yun

2017-02-07

A fire detector is the most important component in a fire alarm system. Herein, we present the feasibility of a highly sensitive and rapid response gas sensor based on metal oxides as a high performance fire detector. The glancing angle deposition (GLAD) technique is used to make the highly porous structure such as nanocolumns (NCs) of various metal oxides for enhancing the gas-sensing performance. To measure the fire detection, the interface circuitry for our sensors (NiO, SnO₂, WO₃ and In₂O₃ NCs) is designed. When all the sensors with various metal-oxide NCs are exposed to fire environment, they entirely react with the target gases emitted from Poly(vinyl chlorides) (PVC) decomposed at high temperature. Before the emission of smoke from the PVC (a hot-plate temperature of 200 °C), the resistances of the metal-oxide NCs are abruptly changed and SnO₂ NCs show the highest response of 2.1. However, a commercial smoke detector did not inform any warning. Interestingly, although the NiO NCs are a p -type semiconductor, they show the highest response of 577.1 after the emission of smoke from the PVC (a hot-plate temperature of 350 °C). The response time of SnO₂ NCs is much faster than that of a commercial smoke detector at the hot-plate temperature of 350 °C. In addition, we investigated the selectivity of our sensors by analyzing the responses of all sensors. Our results show the high potential of a gas sensor based on metal-oxide NCs for early fire detection.

Sensors for process control Focus Team report

NASA Astrophysics Data System (ADS)

At the Semiconductor Technology Workshop, held in November 1992, the Semiconductor Industry Association (SIA) convened 179 semiconductor technology experts to assess the 15-year outlook for the semiconductor manufacturing industry. The output of the Workshop, a document entitled 'Semiconductor Technology: Workshop Working Group Reports,' contained an overall roadmap for the technology characteristics envisioned in integrated circuits (IC's) for the period 1992-2007. In addition, the document contained individual roadmaps for numerous key areas in IC manufacturing, such as film deposition, thermal processing, manufacturing systems, exposure technology, etc. The SIA Report did not contain a separate roadmap for contamination free manufacturing (CFM). A key component of CFM for the next 15 years is the use of sensors for (1) defect reduction, (2) improved product quality, (3) improved yield, (4) improved tool utilization through contamination reduction, and (5) real time process control in semiconductor fabrication. The objective of this Focus Team is to generate a Sensors for Process Control Roadmap. Implicit in this objective is the identification of gaps in current sensor technology so that research and development activity in the sensor industry can be stimulated to develop sensor systems capable of meeting the projected roadmap needs. Sensor performance features of interest include detection limit, specificity, sensitivity, ease of installation and maintenance, range, response time, accuracy, precision, ease and frequency of calibration, degree of automation, and adaptability to in-line process control applications.

Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

PubMed

Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

2017-12-13

A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, James W.

1998-01-01

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1998-06-30

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

Understanding the low temperature electrical properties of nanocrystalline tin oxide for gas sensor applications

NASA Astrophysics Data System (ADS)

Drake, Christina Hartsell

Nanocrystalline metal/metal oxide is an important class of transparent and electronic materials due to its potential use in many applications, including gas sensors. At the nanoscale, many of the phenomena observed that give nanocrystalline semiconducting oxide enhanced performance as a gas sensor material over other conventional engineering materials is still poorly understood. This study is aimed at understanding the low temperature electrical and chemical properties of nanocrystalline SnO2 that makes it suitable for room temperature gas detectors. Studies were carried out in order to understand how various synthesis methods affect the surfaces on the nano-oxides, interactions of a target gas (in this study hydrogen) with different surface species, and changes in the electrical properties as a function of dopants and grain size. A correlation between the surface reactions and the electrical response of doped nanocrystalline metal-oxide-semiconductors exposed to a reducing gas is established using Fourier Transform Infrared (FTIR) Spectroscopy attached to a specially built custom designed catalytic cell. First principle calculations of oxygen vacancy concentrations from absorbance spectra are presented. FTIR is used for effectively screening of these nanostructures for gas sensing applications. The effect of processing temperature on the microstructural evolution and on the electronic properties of nanocrystalline trivalent doped-SnO 2 is also presented. This study includes the effect of dopants (In and Ce) on the growth of nano-SnO2, as well as their effects on the electronic properties and gas sensor behavior of the nanomaterial at room temperature. Band bending affects are also investigated for this system and are related to enhanced low temperature gas sensing. The role and importance of oxygen vacancies in the electronic and chemical behavior of surface modified nanocrystalline SnO2 are explored in this study. A generalized explanation for the low temperature gas sensor behavior of nanocrystalline oxide is presented that can be generalized to other nano-oxide systems and be useful in specific engineering of other nanomaterials. Deeper understanding of how nano-oxides react chemically and electronically would be extremely beneficial to issues present in current low cost, low temperature sensor technology. Ability to exactly monitor and then engineer the chemistry of nanostructures in the space charge region as well as the surface is also of great significance. Knowledge of the mechanisms responsible for enhanced sensor response in this material system could viably be applied to other material systems for sensor applications.

Ultrathin Tungsten Oxide Nanowires/Reduced Graphene Oxide Composites for Toluene Sensing

PubMed Central

Hassan, Muhammad; Wang, Zhi-Hua; Huang, Wei-Ran; Li, Min-Qiang; Chen, Jia-Fu

2017-01-01

Graphene-based composites have gained great attention in the field of gas sensor fabrication due to their higher surface area with additional functional groups. Decorating one-dimensional (1D) semiconductor nanomaterials on graphene also show potential benefits in gas sensing applications. Here we demonstrate the one-pot and low cost synthesis of W18O49 NWs/rGO composites with different amount of reduced graphene oxide (rGO) which show excellent gas-sensing properties towards toluene and strong dependence on their chemical composition. As compared to pure W18O49 NWs, an improved gas sensing response (2.8 times higher) was achieved in case of W18O49 NWs composite with 0.5 wt. % rGO. Promisingly, this strategy can be extended to prepare other nanowire based composites with excellent gas-sensing performance. PMID:28961178

Cobalt Oxide Nanosheet and CNT Micro Carbon Monoxide Sensor Integrated with Readout Circuit on Chip

PubMed Central

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively. PMID:22294897

Cobalt oxide nanosheet and CNT micro carbon monoxide sensor integrated with readout circuit on chip.

PubMed

Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

2010-01-01

The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively.

The study of electronic structure and properties of silicene for gas sensor application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wella, Sasfan A.; Syaputra, Marhamni; Wungu, Triati D. K., E-mail: triati@fi.itb.ac.id

2016-03-11

In this study, we investigated the adsorption of gas molecules (H{sub 2}S, CO) on pristine silicene using first principles calculation. The structure, electronic properties, and adsorption energy of H{sub 2}S,CO/silicene are discussed thoroughly. We found that the pristine silicenewith low buckling structure is the most stable as compared with planar and high buckling structures. Silicene was able to detect a gas molecule which can be observed according tothe density of states analysis. Though a gas molecule adsorbed weakly, the electronic properties of the low buckling pristine silicene changed from semi-metal (zero band gap) to semiconductor. The adsorption energy of H{submore » 2}S and CO on silicene is 0.075 eV and 0.06 eV, respectively.« less

Semiconductor@metal-organic framework core-shell heterostructures: a case of ZnO@ZIF-8 nanorods with selective photoelectrochemical response.

PubMed

Zhan, Wen-wen; Kuang, Qin; Zhou, Jian-zhang; Kong, Xiang-jian; Xie, Zhao-xiong; Zheng, Lan-sun

2013-02-06

Metal-organic frameworks (MOFs) and related material classes are attracting considerable attention for their applications in gas storage/separation as well as catalysis. In contrast, research concerning potential uses in electronic devices (such as sensors) is in its infancy, which might be due to a great challenge in the fabrication of MOFs and semiconductor composites with well-designed structures. In this paper, we proposed a simple self-template strategy to fabricate metal oxide semiconductor@MOF core-shell heterostructures, and successfully obtained freestanding ZnO@ZIF-8 nanorods as well as vertically standing arrays (including nanorod arrays and nanotube arrays). In this synthetic process, ZnO nanorods not only act as the template but also provide Zn(2+) ions for the formation of ZIF-8. In addition, we have demonstrated that solvent composition and reaction temperature are two crucial factors for successfully fabricating well-defined ZnO@ZIF-8 heterostructures. As we expect, the as-prepared ZnO@ZIF-8 nanorod arrays display distinct photoelectrochemical response to hole scavengers with different molecule sizes (e.g., H(2)O(2) and ascorbic acid) owing to the limitation of the aperture of the ZIF-8 shell. Excitingly, such ZnO@ZIF-8 nanorod arrays were successfully applied to the detection of H(2)O(2) in the presence of serous buffer solution. Therefore, it is reasonable to believe that the semiconductor@MOFs heterostructure potentially has promising applications in many electronic devices including sensors.

A Survey on Gas Sensing Technology

PubMed Central

Liu, Xiao; Cheng, Sitian; Liu, Hong; Hu, Sha; Zhang, Daqiang; Ning, Huansheng

2012-01-01

Sensing technology has been widely investigated and utilized for gas detection. Due to the different applicability and inherent limitations of different gas sensing technologies, researchers have been working on different scenarios with enhanced gas sensor calibration. This paper reviews the descriptions, evaluation, comparison and recent developments in existing gas sensing technologies. A classification of sensing technologies is given, based on the variation of electrical and other properties. Detailed introduction to sensing methods based on electrical variation is discussed through further classification according to sensing materials, including metal oxide semiconductors, polymers, carbon nanotubes, and moisture absorbing materials. Methods based on other kinds of variations such as optical, calorimetric, acoustic and gas-chromatographic, are presented in a general way. Several suggestions related to future development are also discussed. Furthermore, this paper focuses on sensitivity and selectivity for performance indicators to compare different sensing technologies, analyzes the factors that influence these two indicators, and lists several corresponding improved approaches. PMID:23012563

A fiber optic sensor with a metal organic framework as a sensing material for trace levels of water in industrial gases.

PubMed

Ohira, Shin-Ichi; Miki, Yusuke; Matsuzaki, Toru; Nakamura, Nao; Sato, Yu-ki; Hirose, Yasuo; Toda, Kei

2015-07-30

Industrial gases such as nitrogen, oxygen, argon, and helium are easily contaminated with water during production, transfer and use, because there is a high volume fraction of water in the atmosphere (approximately 1.2% estimated with the average annual atmospheric temperature and relative humidity). Even trace water (<1 parts per million by volume (ppmv) of H2O, dew point < -76 °C) in the industrial gases can cause quality problems in the process such as production of semiconductors. Therefore, it is important to monitor and to control trace water levels in industrial gases at each supplying step, and especially during their use. In the present study, a fiber optic gas sensor was investigated for monitoring trace water levels in industrial gases. The sensor consists of a film containing a metal organic framework (MOF). MOFs are made of metals coordinated to organic ligands, and have mesoscale pores that adsorb gas molecules. When the MOF, copper benzene-1,3,5-tricarboxylate (Cu-BTC), was used as a sensing material, we investigated the color of Cu-BTC with water adsorption changed both in depth and tone. Cu-BTC crystals appeared deep blue in dry gases, and then changed to light blue in wet gases. An optical gas sensor with the Cu-BTC film was developed using a light emitting diode as the light source and a photodiode as the light intensity detector. The sensor showed a reversible response to trace water, did not require heating to remove the adsorbed water molecules. The sample gas flow rate did not affect the sensitivity. The obtained limit of detection was 40 parts per billion by volume (ppbv). The response time for sample gas containing 2.5 ppmvH2O was 23 s. The standard deviation obtained for daily analysis of 1.0 ppmvH2O standard gas over 20 days was 9%. Furthermore, the type of industrial gas did not affect the sensitivity. These properties mean the sensor will be applicable to trace water detection in various industrial gases. Copyright © 2015 Elsevier B.V. All rights reserved.

A Hazardous Gas Detection System for Aerospace and Commercial Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Chen, L. - Y.; Makel, D. B.; Liu, C. C.; Wu, Q. H.; Knight, D.

1998-01-01

The detection of explosive conditions in aerospace propulsion applications is important for safety and economic reasons. Microfabricated hydrogen, oxygen, and hydrocarbon sensors as well as the accompanying hardware and software are being developed for a range of aerospace safety applications. The development of these sensors is being done using MEMS (Micro ElectroMechanical Systems) based technology and SiC-based semiconductor technology. The hardware and software allows control and interrogation of each sensor head and reduces accompanying cabling through multiplexing. These systems are being applied on the X-33 and on an upcoming STS-95 Shuttle mission. A number of commercial applications are also being pursued. It is concluded that this MEMS-based technology has significant potential to reduce costs and increase safety in a variety of aerospace applications.

A Hazardous Gas Detection System for Aerospace and Commercial Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Chen, L.-Y.; Makel, D. B.; Liu, C. C.; Wu, Q. H.; Knight, D.

1998-01-01

The detection of explosive conditions in aerospace propulsion applications is important for safety and economic reasons. Microfabricated hydrogen, oxygen, and hydrocarbon sensors as well as the accompanying hardware and software are being, developed for a range of aerospace safety applications. The development of these sensors is being done using MEMS (Micro ElectroMechanical Systems) based technology and SiC-based semiconductor technology. The hardware and software allows control and interrocation of each sensor head and reduces accompanying cabling through multiplexing. These systems are being, applied on the X-33 and on an upcoming STS-95 Shuttle mission. A number of commercial applications are also being pursued. It is concluded that this MEMS-based technology has significant potential to reduce costs and increase safety in a variety of aerospace applications.

Sensor development at the semiconductor laboratory of the Max-Planck-Society

NASA Astrophysics Data System (ADS)

Bähr, A.; Lechner, P.; Ninkovic, J.

2017-12-01

For more than twenty years the semiconductor laboratory of the Max-Planck Society (MPG-HLL) is developing high-performing, specialised, scientific silicon sensors including the integration of amplifying electronics on the sensor chip. This paper summarises the actual status of these devices like pnCCDs and DePFET Active Pixel Sensors and their applications.

Gas-Sensing Devices Based on Zn-Doped NiO Two-Dimensional Grainy Films with Fast Response and Recovery for Ammonia Molecule Detection

NASA Astrophysics Data System (ADS)

Wang, Jian; Wei, Xiaowei; Wangyang, Peihua

2015-12-01

Zn-doped NiO two-dimensional grainy films on glass substrates are shown to be an ammonia-sensing material with excellent comprehensive performance, which could real-time detect and monitor ammonia (NH3) in the surrounding environment. The morphology and structure analysis indicated that the as-fabricated semiconductor films were composed of particles with diameters ranging from 80 to 160 nm, and each particle was composed of small crystalline grain with a narrow size about 20 nm, which was the face-centered cubic single crystal structure. X-ray diffraction peaks shifted toward lower angle, and the size of the lattice increased compared with undoped NiO, which demonstrated that zinc ions have been successfully doped into the NiO host structure. Simultaneously, we systematically investigated the gas-sensing properties of the Zn-doped NiO sensors for NH3 detection at room temperature. The sensor based on doped NiO sensing films gave four to nine times faster response and four to six times faster recovery speeds than those of sensor with undoped NiO films, which is important for the NiO sensor practical applications. Moreover, we found that the doped NiO sensors owned outstanding selectivity toward ammonia.

Crystalline Microporous Organosilicates with Reversed Functionalities of Organic and Inorganic Components for Room-Temperature Gas Sensing.

PubMed

Fabbri, Barbara; Bonoldi, Lucia; Guidi, Vincenzo; Cruciani, Giuseppe; Casotti, Davide; Malagù, Cesare; Bellussi, Giuseppe; Millini, Roberto; Montanari, Luciano; Carati, Angela; Rizzo, Caterina; Montanari, Erica; Zanardi, Stefano

2017-07-26

A deepened investigation on an innovative organic-inorganic hybrid material, referred to as ECS-14 (where ECS = Eni carbon silicates), revealed the possibility to use them as gas sensors. Indeed, among ECS phases, the crystalline state and the hexagonal microplateletlike morphology characteristic of ECS-14 seemed favorable properties to obtain continuous and uniform films. ECS-14 phase was used as functional material in screen-printable compositions and was thus deposited by drop coating for morphological, structural, thermal, and electrical characterizations. Possible operation at room temperature was investigated as technological progress, offering intrinsic safety in sensors working in harsh or industrial environments and avoiding high power consumption of most common sensors based on metal oxide semiconductors. Electrical characterization of the sensors based on ECS-14 versus concentrations of gaseous analytes gave significant results at room temperature in the presence of humidity, thereby demonstrating fundamental properties for a good quality sensor (speed, reversibility, and selectivity) that make them competitive with respect to systems currently in use. Remarkably, we observed functionality reversal of the organic and inorganic components; that is, in contrast to other hybrids, for ECS-14 the functional site has been ascribed to the inorganic phase while the organic component provided structural stability to the material. The sensing mechanism for humidity was also investigated.

Ethanol Microsensors with a Readout Circuit Manufactured Using the CMOS-MEMS Technique

PubMed Central

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-01

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro-mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm. PMID:25594598

Ethanol microsensors with a readout circuit manufactured using the CMOS-MEMS technique.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang

2015-01-14

The design and fabrication of an ethanol microsensor integrated with a readout circuit on-a-chip using the complementary metal oxide semiconductor (CMOS)-microelectro -mechanical system (MEMS) technique are investigated. The ethanol sensor is made up of a heater, a sensitive film and interdigitated electrodes. The sensitive film is tin dioxide that is prepared by the sol-gel method. The heater is located under the interdigitated electrodes, and the sensitive film is coated on the interdigitated electrodes. The sensitive film needs a working temperature of 220 °C. The heater is employed to provide the working temperature of sensitive film. The sensor generates a change in capacitance when the sensitive film senses ethanol gas. A readout circuit is used to convert the capacitance variation of the sensor into the output frequency. Experiments show that the sensitivity of the ethanol sensor is 0.9 MHz/ppm.

Investigation of the properties of Sb doping on tin oxide SNO2 materials for technological applications

NASA Astrophysics Data System (ADS)

Hachoun, Z.; Ouerdane, A.; Bouslama, M.; Ghaffour, M.; Abdellaoui, A.; Caudano, Y.; benamara, A. Ali

2016-04-01

The conductivities of the oxide SnO2 is dependent on the nature of the surrounding gas. This property stems from the adsorption or desorption on the surface of oxide grains. These phenomena are usually accompanied by electronic transfer between the adsorbed molecule and the semiconductor material, changing its conductivity. Tin oxidation and Sb doping were realized without and with heating process. The XPS technique and the TEM microscopy showed the synthesized nanocrystals. Simulated Monte Carlo program Casino is used for a scanning its profile. The surface characteristics are highlighted in the aim to be used as spatial gas sensors.

Planar SiC MEMS flame ionization sensor for in-engine monitoring

NASA Astrophysics Data System (ADS)

Rolfe, D. A.; Wodin-Schwartz, S.; Alonso, R.; Pisano, A. P.

2013-12-01

A novel planar silicon carbide (SiC) MEMS flame ionization sensor was developed, fabricated and tested to measure the presence of a flame from the surface of an engine or other cooled surface while withstanding the high temperature and soot of a combustion environment. Silicon carbide, a ceramic semiconductor, was chosen as the sensor material because it has low surface energy and excellent mechanical and electrical properties at high temperatures. The sensor measures the conductivity of scattered charge carriers in the flame's quenching layer. This allows for flame detection, even when the sensor is situated several millimetres from the flame region. The sensor has been shown to detect the ionization of premixed methane and butane flames in a wide temperature range starting from room temperature. The sensors can measure both the flame chemi-ionization and the deposition of water vapour on the sensor surface. The width and speed of a premixed methane laminar flame front were measured with a series of two sensors fabricated on a single die. This research points to the feasibility of using either single sensors or arrays in internal combustion engine cylinders to optimize engine performance, or for using sensors to monitor flame stability in gas turbine applications.

Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Xu, Jennifer C.; Lukco, Dorothy

2006-01-01

Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures ranging from 450 to 600 C for more than 750 hours. The sensors were found to be stable after a break-in time of nearly 200 hours. The sensors exhibited high sensitivity: sensor currents changed by factors ranging from 300 to 800 when the gas was changed from pure N2 to 0.5 percent H2 in N2.

Self-assembled SnO2 micro- and nanosphere-based gas sensor thick films from an alkoxide-derived high purity aqueous colloid precursor

NASA Astrophysics Data System (ADS)

Kelp, G.; Tätte, T.; Pikker, S.; Mändar, H.; Rozhin, A. G.; Rauwel, P.; Vanetsev, A. S.; Gerst, A.; Merisalu, M.; Mäeorg, U.; Natali, M.; Persson, I.; Kessler, V. G.

2016-03-01

Tin oxide is considered to be one of the most promising semiconductor oxide materials for use as a gas sensor. However, a simple route for the controllable build-up of nanostructured, sufficiently pure and hierarchical SnO2 structures for gas sensor applications is still a challenge. In the current work, an aqueous SnO2 nanoparticulate precursor sol, which is free of organic contaminants and sorbed ions and is fully stable over time, was prepared in a highly reproducible manner from an alkoxide Sn(OR)4 just by mixing it with a large excess of pure neutral water. The precursor is formed as a separate liquid phase. The structure and purity of the precursor is revealed using XRD, SAXS, EXAFS, HRTEM imaging, FTIR, and XRF analysis. An unconventional approach for the estimation of the particle size based on the quantification of the Sn-Sn contacts in the structure was developed using EXAFS spectroscopy and verified using HRTEM. To construct sensors with a hierarchical 3D structure, we employed an unusual emulsification technique not involving any additives or surfactants, using simply the extraction of the liquid phase, water, with the help of dry butanol under ambient conditions. The originally generated crystalline but yet highly reactive nanoparticles form relatively uniform spheres through self-assembly and solidify instantly. The spheres floating in butanol were left to deposit on the surface of quartz plates bearing sputtered gold electrodes, producing ready-for-use gas sensors in the form of ca. 50 μm thick sphere-based-films. The films were dried for 24 h and calcined at 300 °C in air before use. The gas sensitivity of the structures was tested in the temperature range of 150-400 °C. The materials showed a very quickly emerging and reversible (20-30 times) increase in electrical conductivity as a response to exposure to air containing 100 ppm of H2 or CO and short (10 s) recovery times when the gas flow was stopped.Tin oxide is considered to be one of the most promising semiconductor oxide materials for use as a gas sensor. However, a simple route for the controllable build-up of nanostructured, sufficiently pure and hierarchical SnO2 structures for gas sensor applications is still a challenge. In the current work, an aqueous SnO2 nanoparticulate precursor sol, which is free of organic contaminants and sorbed ions and is fully stable over time, was prepared in a highly reproducible manner from an alkoxide Sn(OR)4 just by mixing it with a large excess of pure neutral water. The precursor is formed as a separate liquid phase. The structure and purity of the precursor is revealed using XRD, SAXS, EXAFS, HRTEM imaging, FTIR, and XRF analysis. An unconventional approach for the estimation of the particle size based on the quantification of the Sn-Sn contacts in the structure was developed using EXAFS spectroscopy and verified using HRTEM. To construct sensors with a hierarchical 3D structure, we employed an unusual emulsification technique not involving any additives or surfactants, using simply the extraction of the liquid phase, water, with the help of dry butanol under ambient conditions. The originally generated crystalline but yet highly reactive nanoparticles form relatively uniform spheres through self-assembly and solidify instantly. The spheres floating in butanol were left to deposit on the surface of quartz plates bearing sputtered gold electrodes, producing ready-for-use gas sensors in the form of ca. 50 μm thick sphere-based-films. The films were dried for 24 h and calcined at 300 °C in air before use. The gas sensitivity of the structures was tested in the temperature range of 150-400 °C. The materials showed a very quickly emerging and reversible (20-30 times) increase in electrical conductivity as a response to exposure to air containing 100 ppm of H2 or CO and short (10 s) recovery times when the gas flow was stopped. Electronic supplementary information (ESI) available: IR spectrum of additives found in the residual butanol layer formed during precursor preparation. See DOI: 10.1039/c5nr07942j

Test Methodologies for Hydrogen Sensor Performance Assessment: Chamber vs. Flow Through Test Apparatus: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buttner, William J; Hartmann, Kevin S; Schmidt, Kara

Certification of hydrogen sensors to standards often prescribes using large-volume test chambers [1, 2]. However, feedback from stakeholders such as sensor manufacturers and end-users indicate that chamber test methods are often viewed as too slow and expensive for routine assessment. Flow through test methods potentially are an efficient, cost-effective alternative for sensor performance assessment. A large number of sensors can be simultaneously tested, in series or in parallel, with an appropriate flow through test fixture. The recent development of sensors with response times of less than 1s mandates improvements in equipment and methodology to properly capture the performance of thismore » new generation of fast sensors; flow methods are a viable approach for accurate response and recovery time determinations, but there are potential drawbacks. According to ISO 26142 [1], flow through test methods may not properly simulate ambient applications. In chamber test methods, gas transport to the sensor can be dominated by diffusion which is viewed by some users as mimicking deployment in rooms and other confined spaces. Alternatively, in flow through methods, forced flow transports the gas to the sensing element. The advective flow dynamics may induce changes in the sensor behaviour relative to the quasi-quiescent condition that may prevail in chamber test methods. One goal of the current activity in the JRC and NREL sensor laboratories [3, 4] is to develop a validated flow through apparatus and methods for hydrogen sensor performance testing. In addition to minimizing the impact on sensor behaviour induced by differences in flow dynamics, challenges associated with flow through methods include the ability to control environmental parameters (humidity, pressure and temperature) during the test and changes in the test gas composition induced by chemical reactions with upstream sensors. Guidelines on flow through test apparatus design and protocols for the evaluation of hydrogen sensor performance are being developed. Various commercial sensor platforms (e.g., thermal conductivity, catalytic and metal semiconductor) were used to demonstrate the advantages and issues with the flow through methodology.« less

Superior Self-Powered Room-Temperature Chemical Sensing with Light-Activated Inorganic Halides Perovskites.

PubMed

Chen, Hongjun; Zhang, Meng; Bo, Renheng; Barugkin, Chog; Zheng, Jianghui; Ma, Qingshan; Huang, Shujuan; Ho-Baillie, Anita W Y; Catchpole, Kylie R; Tricoli, Antonio

2018-02-01

Hybrid halide perovskite is one of the promising light absorber and is intensively investigated for many optoelectronic applications. Here, the first prototype of a self-powered inorganic halides perovskite for chemical gas sensing at room temperature under visible-light irradiation is presented. These devices consist of porous network of CsPbBr 3 (CPB) and can generate an open-circuit voltage of 0.87 V under visible-light irradiation, which can be used to detect various concentrations of O 2 and parts per million concentrations of medically relevant volatile organic compounds such as acetone and ethanol with very quick response and recovery time. It is observed that O 2 gas can passivate the surface trap sites in CPB and the ambipolar charge transport in the perovskite layer results in a distinct sensing mechanism compared with established semiconductors with symmetric electrical response to both oxidizing and reducing gases. The platform of CPB-based gas sensor provides new insights for the emerging area of wearable sensors for personalized and preventive medicine. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Miniature Trace Gas Detector Based on Microfabricated Optical Resonators

NASA Technical Reports Server (NTRS)

Aveline, David C.; Yu, Nan; Thompson, Robert J.; Strekalov, Dmitry V.

2013-01-01

While a variety of techniques exist to monitor trace gases, methods relying on absorption of laser light are the most commonly used in terrestrial applications. Cavity-enhanced absorption techniques typically use high-reflectivity mirrors to form a resonant cavity, inside of which a sample gas can be analyzed. The effective absorption length is augmented by the cavity's high quality factor, or Q, because the light reflects many times between the mirrors. The sensitivity of such mirror-based sensors scales with size, generally making them somewhat bulky in volume. Also, specialized coatings for the high-reflectivity mirrors have limited bandwidth (typically just a few nanometers), and the delicate mirror surfaces can easily be degraded by dust or chemical films. As a highly sensitive and compact alternative, JPL is developing a novel trace gas sensor based on a monolithic optical resonator structure that has been modified such that a gas sample can be directly injected into the cavity. This device concept combines ultra-high Q optical whispering gallery mode resonators (WGMR) with microfabrication technology used in the semiconductor industry. For direct access to the optical mode inside a resonator, material can be precisely milled from its perimeter, creating an open gap within the WGMR. Within this open notch, the full optical mode of the resonator can be accessed. While this modification may limit the obtainable Q, calculations show that the reduction is not significant enough to outweigh its utility for trace gas detection. The notch can be milled from the high- Q crystalline WGMR with a focused ion beam (FIB) instrument with resolution much finer than an optical wavelength, thereby minimizing scattering losses and preserving the optical quality. Initial experimental demonstrations have shown that these opened cavities still support high-Q whispering gallery modes. This technology could provide ultrasensitive detection of a variety of molecular species in an extremely compact and robust package. With this type of modified WGMR, one can inject a gas sample into the open gap, allowing highly sensitive trace molecule detection within a roughly 1-cm volume. Other critical components of the instrument, such as the detector and a semiconductor laser, could be directly packaged with the resonator so as to not significantly increase the size of the device. Besides its low mass, volume, and power consumption, the monolithic design makes these resonators intrinsically robust devices, capable of handling significant temperature excursions, without moving parts to wear out or delicate coatings that can be easily damaged. A sensor could integrate with microfluidics technology for a chip-scale device. It could be mounted to the end of a deployable arm, or inserted into a borehole. Also, a network of individual sensors could be dispersed to monitor conditions over a wide region

A study of transition from n- to p-type based on hexagonal WO3 nanorods sensor

NASA Astrophysics Data System (ADS)

Wu, Ya-Qiao; Hu, Ming; Wei, Xiao-Ying

2014-04-01

Hexagonal WO3 nanorods are fabricated by a facile hydrothermal process at 180 °C using sodium tungstate and sodium chloride as starting materials. The morphology, structure, and composition of the prepared nanorods are studied by scanning electron microscopy, X-ray diffraction spectroscopy, and energy dispersive spectroscopy. It is found that the agglomeration of the nanorods is strongly dependent on the PH value of the reaction solution. Uniform and isolated WO3 nanorods with diameters ranging from 100 nm-150 nm and lengths up to several micrometers are obtained at PH = 2.5 and the nanorods are identified as being hexagonal in phase structure. The sensing characteristics of the WO3 nanorod sensor are obtained by measuring the dynamic response to NO2 with concentrations in the range 0.5 ppm-5 ppm and at working temperatures in the range 25 °C-250 °C. The obtained WO3 nanorods sensors are found to exhibit opposite sensing behaviors, depending on the working temperature. When being exposed to oxidizing NO2 gas, the WO3 nanorod sensor behaves as an n-type semiconductor as expected when the working temperature is higher than 50 °C, whereas, it behaves as a p-type semiconductor below 50 °C. The origin of the n- to p-type transition is correlated with the formation of an inversion layer at the surface of the WO3 nanorod at room temperature. This finding is useful for making new room temperature NO2 sensors based on hexagonal WO3 nanorods.

Application of polymer-coated metal-insulator-semiconductor sensors for the detection of dissolved hydrogen

NASA Astrophysics Data System (ADS)

Li, Dongmei; Medlin, J. W.; Bastasz, R.

2006-06-01

The detection of dissolved hydrogen in liquids is crucial to many industrial applications, such as fault detection for oil-filled electrical equipment. To enhance the performance of metal-insulator-semiconductor (MIS) sensors for dissolved hydrogen detection, a palladium MIS sensor has been modified by depositing a polyimide (PI) layer above the palladium surface. Response measurements of the PI-coated sensors in mineral oil indicate that hydrogen is sensitively detected, while the effect of interfering gases on sensor response is minimized.

CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

BN-C Hybrid Nanoribbons as Gas Sensors

NASA Astrophysics Data System (ADS)

Darvishi Gilan, Mahdi; Chegel, Raad

2018-02-01

The effects of carbon monoxide (CO) and ammonia (NH3) molecules adsorption on the various composites of boron nitride and graphene BN-C hybrid nanoribbons are investigated using the non-equilibrium Green's function (NEGF) technique based on density functional theory (DFT). The effects of adsorption with possible random configurations on the average of the density of states (DOS), transmission coefficient, and the current-voltage ( I- V) characteristics are calculated. The results indicate that, by embedding armchair graphene nanoribbon (AGNR) with boron nitride nanoribbon (BNNR), the various electronic properties can be observed after gas molecule adsorption. The electronic structure and gap of hybrids system is modified due to gas adsorption, and the systems act like the n-type semiconductor by NH3 molecule adsorption. The hybrid structures due to their tunable band gap are better candidates for gas detecting compared to the pristine BNNRs and AGNRs.

Effect of Embedded Pd Microstructures on the Flat-Band-Voltage Operation of Room Temperature ZnO-Based Liquid Petroleum Gas Sensors

PubMed Central

Ali, Ghusoon M.; Thompson, Cody V.; Jasim, Ali K.; Abdulbaqi, Isam M.; Moore, James C.

2013-01-01

Three methods were used to fabricate ZnO-based room temperature liquid petroleum gas (LPG) sensors having interdigitated metal-semiconductor-metal (MSM) structures. Specifically, devices with Pd Schottky contacts were fabricated with: (1) un-doped ZnO active layers; (2) Pd-doped ZnO active layers; and (3) un-doped ZnO layers on top of Pd microstructure arrays. All ZnO films were grown on p-type Si(111) substrates by the sol-gel method. For devices incorporating a microstructure array, Pd islands were first grown on the substrate by thermal evaporation using a 100 μm mesh shadow mask. We have estimated the sensitivity of the sensors for applied voltage from –5 to 5 V in air ambient, as well as with exposure to LPG in concentrations from 500 to 3,500 ppm at room temperature (300 K). The current-voltage characteristics were studied and parameters such as leakage current, barrier height, reach-through voltage, and flat-band voltage were extracted. We include contributions due to the barrier height dependence on the electric field and tunneling through the barrier for the studied MSM devices. The Pd-enhanced devices demonstrated a maximum gas response at flat-band voltages. The study also revealed that active layers consisting of Pd microstructure embedded ZnO films resulted in devices exhibiting greater gas-response as compared to those using Pd-doped ZnO thin films or un-doped active layers.

Quality Evaluation of Agricultural Distillates Using an Electronic Nose

PubMed Central

Dymerski, Tomasz; Gębicki, Jacek; Wardencki, Waldemar; Namieśnik, Jacek

2013-01-01

The paper presents the application of an electronic nose instrument to fast evaluation of agricultural distillates differing in quality. The investigations were carried out using a prototype of electronic nose equipped with a set of six semiconductor sensors by FIGARO Co., an electronic circuit converting signal into digital form and a set of thermostats able to provide gradient temperature characteristics to a gas mixture. A volatile fraction of the agricultural distillate samples differing in quality was obtained by barbotage. Interpretation of the results involved three data analysis techniques: principal component analysis, single-linkage cluster analysis and cluster analysis with spheres method. The investigations prove the usefulness of the presented technique in the quality control of agricultural distillates. Optimum measurements conditions were also defined, including volumetric flow rate of carrier gas (15 L/h), thermostat temperature during the barbotage process (15 °C) and time of sensor signal acquisition from the onset of the barbotage process (60 s). PMID:24287525

Ultrahigh-sensitive sensing platform based on p-type dumbbell-like Co3O4 network

NASA Astrophysics Data System (ADS)

Zhou, Tingting; Zhang, Tong; Zhang, Rui; Lou, Zheng; Deng, Jianan; Wang, Lili

2017-12-01

Development of high performance room temperature sensors remains a grand challenge for high demand of practical application. Metal oxide semiconductors (MOSs) have many advantages over others due to their easy functionalization, high surface area, and low cost. However, they typically need a high work temperature during sensing process. Here, p-type sensing layer is reported, consisting of pore-rich dumbbell-like Co3O4 particles (DP-Co3O4) with intrinsic high catalytic activity. The gas sensor (GS) based DP-Co3O4 catalyst exhibits ultrahigh NH3 sensing activity along with excellent stability over other structure based NH3 GSs in room temperature work environment. In addition, the unique structure of DP-Co3O4 with pore-rich and high catalytic activity endows fast gas diffusion rate and high sensitivity at room temperature. Taken together, the findings in this work highlight the merit of integrating highly active materials in p-type materials, offering a framework to develop high-sensitivity room temperature sensing platforms.

Early detection of fungal contamination on green coffee by a MOX sensors based Electronic Nose

NASA Astrophysics Data System (ADS)

Sberveglieri, V.; Concina, I.; Falasconi, M.; Gobbi, E.; Pulvirenti, A.; Fava, P.

2011-09-01

Fungal growth can occur on green coffee beans along all the distribution chain, eventually bringing on health hazards to consumers, because of the production of toxic metabolites (mycotoxins) [1]. Besides, the sensorial contamination due to volatiles by-products of fungal metabolism could cause defects on coffee also after roasting. Therefore, it is necessary to devise strategies to detect and quantify fungal infection and toxin production at early stages of the food chain. One of the most promising techniques is the analysis of volatile compounds in the headspace gas surrounding the samples. The aim of this work was to verify the ability of the Electronic Nose (EN EOS835) to early detect the microbial contamination of Arabica green coffee. This EN is equipped with Metal Oxide Semiconductor sensor array. Gas chromatography coupled to mass spectrometry (GC-MS) analysis of the static headspace of non-contaminated Arabica green coffee samples was carried out to confirm the EN ability to provide satisfactory indications about the presence of contamination.

Mid-IR absorption sensing of heavy water using a silicon-on-sapphire waveguide.

PubMed

Singh, Neetesh; Casas-Bedoya, Alvaro; Hudson, Darren D; Read, Andrew; Mägi, Eric; Eggleton, Benjamin J

2016-12-15

We demonstrate a compact silicon-on-sapphire (SOS) strip waveguide sensor for mid-IR absorption spectroscopy. This device can be used for gas and liquid sensing, especially to detect chemically similar molecules and precisely characterize extremely absorptive liquids that are difficult to detect by conventional infrared transmission techniques. We reliably measure concentrations up to 0.25% of heavy water (D₂O) in a D₂O-H₂O mixture at its maximum absorption band at around 4 μm. This complementary metal-oxide-semiconductor (CMOS) compatible SOS D₂O sensor is promising for applications such as measuring body fat content or detection of coolant leakage in nuclear reactors.

Nanoscale PdO Catalyst Functionalized Co3O4 Hollow Nanocages Using MOF Templates for Selective Detection of Acetone Molecules in Exhaled Breath.

PubMed

Koo, Won-Tae; Yu, Sunmoon; Choi, Seon-Jin; Jang, Ji-Soo; Cheong, Jun Young; Kim, Il-Doo

2017-03-08

The increase of surface area and the functionalization of catalyst are crucial to development of high-performance semiconductor metal oxide (SMO) based chemiresistive gas sensors. Herein, nanoscale catalyst loaded Co 3 O 4 hollow nanocages (HNCs) by using metal-organic framework (MOF) templates have been developed as a new sensing platform. Nanoscale Pd nanoparticles (NPs) were easily loaded on the cavity of Co based zeolite imidazole framework (ZIF-67). The porous structure of ZIF-67 can restrict the size of Pd NPs (2-3 nm) and separate Pd NPs from each other. Subsequently, the calcination of Pd loaded ZIF-67 produced the catalytic PdO NPs functionalized Co 3 O 4 HNCs (PdO-Co 3 O 4 HNCs). The ultrasmall PdO NPs (3-4 nm) are well-distributed in the wall of Co 3 O 4 HNCs, the unique structure of which can provide high surface area and high catalytic activity. As a result, the PdO-Co 3 O 4 HNCs exhibited improved acetone sensing response (R gas /R air = 2.51-5 ppm) compared to PdO-Co 3 O 4 powders (R gas /R air = 1.98), Co 3 O 4 HNCs (R gas /R air = 1.96), and Co 3 O 4 powders (R gas /R air = 1.45). In addition, the PdO-Co 3 O 4 HNCs showed high acetone selectivity against other interfering gases. Moreover, the sensor array clearly distinguished simulated exhaled breath of diabetics from healthy people's breath. These results confirmed the novel synthesis of MOF templated nanoscale catalyst loaded SMO HNCs for high performance gas sensors.

Highly Sensitive and Very Stretchable Strain Sensor Based on a Rubbery Semiconductor.

PubMed

Kim, Hae-Jin; Thukral, Anish; Yu, Cunjiang

2018-02-07

There is a growing interest in developing stretchable strain sensors to quantify the large mechanical deformation and strain associated with the activities for a wide range of species, such as humans, machines, and robots. Here, we report a novel stretchable strain sensor entirely in a rubber format by using a solution-processed rubbery semiconductor as the sensing material to achieve high sensitivity, large mechanical strain tolerance, and hysteresis-less and highly linear responses. Specifically, the rubbery semiconductor exploits π-π stacked poly(3-hexylthiophene-2,5-diyl) nanofibrils (P3HT-NFs) percolated in silicone elastomer of poly(dimethylsiloxane) to yield semiconducting nanocomposite with a large mechanical stretchability, although P3HT is a well-known nonstretchable semiconductor. The fabricated strain sensors exhibit reliable and reversible sensing capability, high gauge factor (gauge factor = 32), high linearity (R 2 > 0.996), and low hysteresis (degree of hysteresis <12%) responses at the mechanical strain of up to 100%. A strain sensor in this format can be scalably manufactured and implemented as wearable smart gloves. Systematic investigations in the materials design and synthesis, sensor fabrication and characterization, and mechanical analysis reveal the key fundamental and application aspects of the highly sensitive and very stretchable strain sensors entirely from rubbers.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, James W.

1996-01-01

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

Development and Application of Microfabricated Chemical Gas Sensors For Aerospace Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Fralick, G.; Thomas, V.; Liu, C. C.; Wu, Q. H.; Sawayda, M. S.; Jin, A.; Hammond, J.; Makel, D.;

Charge-flow structures as polymeric early-warning fire alarm devices. M.S. Thesis; [metal oxide semiconductors

NASA Technical Reports Server (NTRS)

Sechen, C. M.; Senturia, S. D.

1977-01-01

The charge-flow transistor (CFT) and its applications for fire detection and gas sensing were investigated. The utility of various thin film polymers as possible sensing materials was determined. One polymer, PAPA, showed promise as a relative humidity sensor; two others, PFI and PSB, were found to be particularly suitable for fire detection. The behavior of the charge-flow capacitor, which is basically a parallel-plate capacitor with a polymer-filled gap in the metallic tip electrode, was successfully modeled as an RC transmission line. Prototype charge-flow transistors were fabricated and tested. The effective threshold voltage of this metal oxide semiconductor was found to be dependent on whether surface or bulk conduction in the thin film was dominant. Fire tests with a PFI-coated CFT indicate good sensitivity to smouldering fires.

ZnO-carbon nanofibers for stable, high response, and selective H2S sensors.

PubMed

Zhang, Jitao; Zhu, Zijian; Chen, Changmiao; Chen, Zhi; Cai, Mengqiu; Qu, Baihua; Wang, Taihong; Zhang, Ming

2018-07-06

Hydrogen sulfide (H 2 S), as a typical atmospheric pollutant, is neurotoxic and flammable even at a very low concentration. In this study, we design stable H 2 S sensors based on ZnO-carbon nanofibers. Nanofibers with 30.34 wt% carbon are prepared by a facial electrospinning route followed by an annealing treatment. The resulting H 2 S sensors show excellent selectivity and response compared to the pure ZnO nanofiber H 2 S sensors, particularly the response in the range of 102-50 ppm of H 2 S. Besides, they exhibited a nearly constant response of approximately 40-20 ppm of H 2 S over 60 days. The superior performance of these H 2 S sensors can be attributed to the protection of carbon, which ensures the high stability of ZnO, and oxygen vacancies that improve the response and selectivity of H 2 S. The good performance of ZnO-carbon H 2 S sensors suggests that composites with oxygen vacancies prepared by a facial electrospinning route may provide a new research strategy in the field of gas sensors, photocatalysts, and semiconductor devices.

Development of Microfabricated Chemical Gas Sensors and Sensor Arrays for Aerospace Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Fralick, G.; Thomas, V.; Liu, C. C.; Wu, W. H.; Ward, B.; Makel, D.

2002-01-01

Aerospace applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. In particular, factors such as minimal sensor size, weight, and power consumption are particularly important. Development areas which have potential aerospace applications include launch vehicle leak detection, engine health monitoring, fire detection, and environmental monitoring. Sensor development for these applications is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors. 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity. 3) The development of high temperature semiconductors, especially silicon carbide. However, due to issues of selectivity and cross-sensitivity, individual sensors are limited in the amount of information that they can provide in environments that contain multiple chemical species. Thus, sensor arrays are being developed to address detection needs in such multi-species environments. This paper discusses the needs of space applications as well as the point-contact sensor technology and sensor arrays being developed to address these needs. Sensors to measure hydrogen, hydrocarbons, hydrazine, nitrogen oxides (NO,), carbon monoxide, oxygen, and carbon dioxide are being developed as well as arrays for leak, fire, and emissions detection. Demonstrations of the technology will also be discussed. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1996-08-20

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

ZnO Thin Film Electronics for More than Displays

NASA Astrophysics Data System (ADS)

Ramirez, Jose Israel

Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow discharging time constants. Finally, to circumvent fabrication challenges on predetermined complex shapes, like curved mirror optics, a technique to transfer electronics from a rigid substrate to a flexible substrate is used. This technique allows various thin films, regardless of their deposition temperature, to be transferred to flexible substrates. Finally, ultra-low power operation of ZnO TFT gas sensors was demonstrated. The ZnO ozone sensors were optimized to operate with excellent electrical stability in ambient conditions, without using elevated temperatures, while still providing good gas sensitivity. This was achieved by using a post-deposition anneal and by partially passivating the contact regions while leaving the semiconductor sensing area open to the ambient. A novel technique to reset the gas sensor using periodic pulsing of a UV light over the sensor results in less than 25 milliseconds recovery time. A pathway to achieve gas selectivity by using organic thin-film layers as filters deposited over the gas sensors tis demonstrated. The ZnO ozone sensor TFTs and the UV light operate at room temperature with an average power below 1 muW.

Sensors, nano-electronics and photonics for the Army of 2030 and beyond

NASA Astrophysics Data System (ADS)

Perconti, Philip; Alberts, W. C. K.; Bajaj, Jagmohan; Schuster, Jonathan; Reed, Meredith

2016-02-01

The US Army's future operating concept will rely heavily on sensors, nano-electronics and photonics technologies to rapidly develop situational understanding in challenging and complex environments. Recent technology breakthroughs in integrated 3D multiscale semiconductor modeling (from atoms-to-sensors), combined with ARL's Open Campus business model for collaborative research provide a unique opportunity to accelerate the adoption of new technology for reduced size, weight, power, and cost of Army equipment. This paper presents recent research efforts on multi-scale modeling at the US Army Research Laboratory (ARL) and proposes the establishment of a modeling consortium or center for semiconductor materials modeling. ARL's proposed Center for Semiconductor Materials Modeling brings together government, academia, and industry in a collaborative fashion to continuously push semiconductor research forward for the mutual benefit of all Army partners.

Silicon carbide novel optical sensor for combustion systems and nuclear reactors

NASA Astrophysics Data System (ADS)

Lim, Geunsik; Kar, Aravinda

2014-09-01

Crystalline silicon carbide is a wide bandgap semiconductor material with excellent optical properties, chemical inertness, radiation hardness and high mechanical strength at high temperatures. It is an excellent material platform for sensor applications in harsh environments such as combustion systems and nuclear reactors. A laser doping technique is used to fabricate SiC sensors for different combustion gases such as CO2, CO, NO and NO2. The sensor operates based on the principle of semiconductor optics, producing optical signal in contrast to conventional electrical sensors that produces electrical signal. The sensor response is measured with a low power He-Ne or diode laser.

Study of functional properties of gas-sensitive cobalt-containing polyacrylonitrile films

NASA Astrophysics Data System (ADS)

Semenistaya, T. V.; Voronova, A. A.

2017-11-01

The design of the sensor materials with challenging gas-sensitivity can be solved by materials selection and their compatibility with the manufacturing technologies that allows to operate the process of formation of nanocomposite structure and to receive the required material. The polyacrylonitrile (PAN) as the conducting polymer with a highly π-conjugated polymeric chain due to flexibility for tailoring the structure of the final products by the pyrolysis method under the influence of incoherent IR-radiation is chosen. The aim of the work was to study the peculiarities of formation procedure of cobalt-containing PAN films. The gas-sensing Co-containing PAN films have been fabricated. The different temperature and time have been used to form the films. Depending on intensity and exposure time of IR-radiation the thermostructured PAN films with resistance values of · 108 Ω to 1010 Ω have been fabricated. It is shown that the heat-treated PAN is the p-type semiconductor. Irrespective of the level of the modifying additive in film-forming solution and the time-temperature modes little change of film resistance has been found. It has been found that the Co-containing PAN films are gas-sensing films and have high selectivity to Cl2 and NO2. A stationary state gas distribution method was used for testing gas-sensing properties. Obtained the Co-containing PAN films are perspective for low-temperature applications as Cl2 and NO2 sensors.

DNA decorated carbon nanotube sensors on CMOS circuitry for environmental monitoring

NASA Astrophysics Data System (ADS)

Liu, Yu; Chen, Chia-Ling; Agarwal, V.; Li, Xinghui; Sonkusale, S.; Dokmeci, Mehmet R.; Wang, Ming L.

2010-04-01

Single-walled carbon nanotubes (SWNTs) with their large surface area, high aspect ratio are one of the novel materials which have numerous attractive features amenable for high sensitivity sensors. Several nanotube based sensors including, gas, chemical and biosensors have been demonstrated. Moreover, most of these sensors require off chip components to detect the variations in the signals making them complicated and hard to commercialize. Here we present a novel complementary metal oxide semiconductor (CMOS) integrated carbon nanotube sensors for portable high sensitivity chemical sensing applications. Multiple zincation steps have been developed to ascertain proper electrical connectivity between the carbon nanotubes and the foundry made CMOS circuitry. The SWNTs have been integrated onto (CMOS) circuitry as the feedback resistor of a Miller compensated operational amplifier utilizing low temperature Dielectrophoretic (DEP) assembly process which has been tailored to be compatible with the post-CMOS integration at the die level. Building nanotube sensors directly on commercial CMOS circuitry allows single chip solutions eliminating the need for long parasitic lines and numerous wire bonds. The carbon nanotube sensors realized on CMOS circuitry show strong response to various vapors including Dimethyl methylphosphonate and Dinitrotoluene. The remarkable set of attributes of the SWNTs realized on CMOS electronic chips provides an attractive platform for high sensitivity portable nanotube based bio and chemical sensors.

Apparatus and method for detecting electromagnetic radiation using electron photoemission in a micromechanical sensor

DOEpatents

Datskos, Panagiotis G.; Rajic, Slobodan; Datskou, Irene C.; Egert, Charles M.

2002-01-01

A micromechanical sensor and method for detecting electromagnetic radiation involve producing photoelectrons from a metal surface in contact with a semiconductor. The photoelectrons are extracted into the semiconductor, which causes photo-induced bending. The resulting bending is measured, and a signal corresponding to the measured bending is generated and processed. A plurality of individual micromechanical sensors can be arranged in a two-dimensional matrix for imaging applications.

Semiconductor gas sensor based on tin oxide nanorods prepared by plasma-enhanced chemical vapor deposition with postplasma treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang Hui; Tan, O.K.; Lee, Y.C.

2005-10-17

SnO{sub 2} thin films were deposited by radio-frequency inductively coupled plasma-enhanced chemical vapor deposition. Postplasma treatments were used to modify the microstructure of the as-deposited SnO{sub 2} thin films. Uniform nanorods with dimension of null-set 7x100 nm were observed in the plasma-treated films. After plasma treatments, the optimal operating temperature of the plasma-treated SnO{sub 2} thin films decreased by 80 deg. C, while the gas sensitivity increased eightfold. The enhanced gas sensing properties of the plasma-treated SnO{sub 2} thin film were believed to result from the large surface-to-volume ratio of the nanorods' tiny grain size in the scale comparable tomore » the space-charge length and its unique microstructure of SnO{sub 2} nanorods rooted in SnO{sub 2} thin films.« less

Morphology and Gas-Sensing Properties of Tin Oxide Foams with Dual Pore Structure

NASA Astrophysics Data System (ADS)

Nam, Kyungju; Kim, Hyeong-Gwan; Choi, Hyelim; Park, Hyeji; Kang, Jin Soo; Sung, Yung-Eun; Lee, Hee Chul; Choe, Heeman

2017-06-01

Tin oxide is a commonly used gas-sensing material, which can be applied as an n- or p-type gas sensor. To improve the gas-sensing performance of tin oxide, we successfully synthesized tin oxide foam via an ice-templating or freeze-casting method. The tin oxide foam samples showed different morphological features depending on the major processing parameters, which include sintering temperature, sintering time, and the amount of added powder. Based on scanning electron microscopy images, we could identify dual pore structure of tin oxide foam containing `wall' pores ranging from 5.3 μm to 10.7 μm, as well as smaller secondary pores (a few micrometers in size) on the wall surfaces. Gas-sensing performance tests for the synthesized tin oxide foams reveal a sensitivity of 13.1, a response time of 192 s, and a recovery time of 160 s at an ethanol gas concentration of 60 ppm at 300°C. This is a remarkable result given that it showed p-type semiconductor behavior and was used without the addition of any catalyst.

Hierarchical structures of carbon nanotubes and arrays of chromium-capped silicon nanopillars: formation and electrical properties.

PubMed

Koch, Stefan; Joshi, Ravi K; Noyong, Michael; Timper, Jan; Schneider, Jörg J; Simon, Ulrich

2012-09-10

The formation of stochastically oriented carbon-nanotube networks on top of an array of free-standing chromium-capped silicon nanopillars is reported. The combination of nanosphere lithography and chemical vapor deposition enables the construction of nanostructures that exhibit a hierarchical sequence of structural sizes. Metallic chromium serves as an etching mask for Si-pillar formation and as a nucleation site for the formation of carbon nanotubes through the chemical vapor deposition of ethene, ethanol, and methane, respectively, thereby bridging individual pillars from top to top. Iron and cobalt were applied onto the chromium caps as catalysts for CNT growth and the influence of different carbon sources and different gas-flow rates were investigated. The carbon nanotubes were structurally characterized and their DC electrical properties were studied by in situ local- and ex situ macroscopic measurements, both of which reveal their semiconductor properties. This process demonstrates how carbon nanotubes can be integrated into Si-based semiconductors and, thus, this process may be used to form high-surface-area sensors or new porous catalyst supports with enhanced gas-permeation properties. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A novel polyimide based micro heater with high temperature uniformity

DOE PAGES

Yu, Shifeng; Wang, Shuyu; Lu, Ming; ...

2017-02-06

MEMS based micro heaters are a key component in micro bio-calorimetry, nondispersive infrared gas sensors, semiconductor gas sensors and microfluidic actuators. A micro heater with a uniform temperature distribution in the heating area and short response time is desirable in ultrasensitive temperature-dependent measurements. In this study, we propose a novel micro heater design to reach a uniform temperature in a large heating area by optimizing the heating power density distribution in the heating area. A polyimide membrane is utilized as the substrate to reduce the thermal mass and heat loss which allows for fast thermal response as well as amore » simplified fabrication process. A gold and titanium heating element is fabricated on the flexible polyimide substrate using the standard MEMS technique. The temperature distribution in the heating area for a certain power input is measured by an IR camera, and is consistent with FEA simulation results. Finally, this design can achieve fast response and uniform temperature distribution, which is quite suitable for the programmable heating such as impulse and step driving.« less

A novel polyimide based micro heater with high temperature uniformity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Shifeng; Wang, Shuyu; Lu, Ming

MEMS based micro heaters are a key component in micro bio-calorimetry, nondispersive infrared gas sensors, semiconductor gas sensors and microfluidic actuators. A micro heater with a uniform temperature distribution in the heating area and short response time is desirable in ultrasensitive temperature-dependent measurements. In this study, we propose a novel micro heater design to reach a uniform temperature in a large heating area by optimizing the heating power density distribution in the heating area. A polyimide membrane is utilized as the substrate to reduce the thermal mass and heat loss which allows for fast thermal response as well as amore » simplified fabrication process. A gold and titanium heating element is fabricated on the flexible polyimide substrate using the standard MEMS technique. The temperature distribution in the heating area for a certain power input is measured by an IR camera, and is consistent with FEA simulation results. Finally, this design can achieve fast response and uniform temperature distribution, which is quite suitable for the programmable heating such as impulse and step driving.« less

Classification of buildings mold threat using electronic nose

NASA Astrophysics Data System (ADS)

Łagód, Grzegorz; Suchorab, Zbigniew; Guz, Łukasz; Sobczuk, Henryk

2017-07-01

Mold is considered to be one of the most important features of Sick Building Syndrome and is an important problem in current building industry. In many cases it is caused by the rising moisture of building envelopes surface and exaggerated humidity of indoor air. Concerning historical buildings it is mostly caused by outdated raising techniques among that is absence of horizontal isolation against moisture and hygroscopic materials applied for construction. Recent buildings also suffer problem of mold risk which is caused in many cases by hermetization leading to improper performance of gravitational ventilation systems that make suitable conditions for mold development. Basing on our research there is proposed a method of buildings mold threat classification using electronic nose, based on a gas sensors array which consists of MOS sensors (metal oxide semiconductor). Used device is frequently applied for air quality assessment in environmental engineering branches. Presented results show the interpretation of e-nose readouts of indoor air sampled in rooms threatened with mold development in comparison with clean reference rooms and synthetic air. Obtained multivariate data were processed, visualized and classified using a PCA (Principal Component Analysis) and ANN (Artificial Neural Network) methods. Described investigation confirmed that electronic nose - gas sensors array supported with data processing enables to classify air samples taken from different rooms affected with mold.

TiO2 Nanorods Decorated with Pd Nanoparticles for Enhanced Liquefied Petroleum Gas Sensing Performance.

PubMed

Dhawale, Dattatray S; Gujar, Tanaji P; Lokhande, Chandrakant D

2017-08-15

Development of highly sensitive and selective semiconductor-based metal oxide sensor devices to detect toxic, explosive, flammable, and pollutant gases is still a challenging research topic. In the present work, we systematically enhanced the liquefied petroleum gas (LPG) sensing performance of chemical bath deposited TiO 2 nanorods by decorating Pd nanoparticle catalyst. Surface morphology with elemental mapping, crystal structure, composition and oxidation states, and surface area measurements of pristine TiO 2 and Pd:TiO 2 nanorods was examined by high resolution transmission electron microscopy with energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and nitrogen adsorption-desorption characterization techniques. LPG sensing performance of pristine TiO 2 and Pd:TiO 2 nanorods was investigated in different LPG concentration and operating temperature ranges. The LPG response of 21% for pristine TiO 2 nanorods is enhanced to 49% after Pd catalyst decoration with reasonably fast response and recovery times. Further, the sensor exhibited long-term stability, which could be due to the strong metal support (Pd:TiO 2 ) interaction and catalytic properties offered by the Pd nanoparticle catalyst. The work described herein demonstrates a general and scalable approach that provides a promising route for rational design of variety of sensor devices for LPG detection.

Semiconductor nanomembrane-based sensors for high frequency pressure measurements

NASA Astrophysics Data System (ADS)

Ruan, Hang; Kang, Yuhong; Homer, Michelle; Claus, Richard O.; Mayo, David; Sibold, Ridge; Jones, Tyler; Ng, Wing

2017-04-01

This paper demonstrates improvements on semiconductor nanomembrane based high frequency pressure sensors that utilize silicon on insulator techniques in combination with nanocomposite materials. The low-modulus, conformal nanomembrane sensor skins with integrated interconnect elements and electronic devices could be applied to vehicles or wind tunnel models for full spectrum pressure analysis. Experimental data demonstrates that: 1) silicon nanomembrane may be used as single pressure sensor transducers and elements in sensor arrays, 2) the arrays may be instrumented to map pressure over the surfaces of test articles over a range of Reynolds numbers, temperature and other environmental conditions, 3) in the high frequency range, the sensor is comparable to the commercial high frequency sensor, and 4) in the low frequency range, the sensor is much better than the commercial sensor. This supports the claim that nanomembrane pressure sensors may be used for wide bandwidth flow analysis.

Rare resource supply crisis and solution technology for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

2016-03-01

There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

Deposition method for producing silicon carbide high-temperature semiconductors

DOEpatents

Hsu, George C.; Rohatgi, Naresh K.

1987-01-01

An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

Airborne and spaceborne lasers for terrestrial geophysical sensing; Proceedings of the Meeting, Los Angeles, CA, Jan. 14, 15, 1988

NASA Technical Reports Server (NTRS)

Allario, Frank (Editor)

1988-01-01

The present conference on airborne and spaceborne remote sensing laser applications discusses topics in atmospheric and geophysical sciences-related sensors, lidar and DIAL component and subsystem technologies, and coherent laser experiments and semiconductor laser technologies. Attention is given to airborne lidar measurement of aerosols, a ground-based injection-locked pulsed TEA laser for wind measurements, chemical/biological agent standoff detection methods, lidars for wind shear erosion, laser tuning to selected gas absorption lines in the atmosphere, the NASA lidar-in-space technology experiment, and the Laser Atmospheric Wind Sounder.

Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

DOEpatents

Duncan, Paul G.

2002-01-01

Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

IR in Norway

NASA Astrophysics Data System (ADS)

Haakenaasen, Randi; Lovold, Stian

2003-01-01

Infrared technology in Norway started at the Norwegian Defense Research Establishment (FFI) in the 1960s, and has since then spread to universities, other research institutes and industry. FFI has a large, integrated IR activity that includes research and development in IR detectors, optics design, optical coatings, advanced dewar design, modelling/simulation of IR scenes, and image analysis. Part of the integrated activity is a laboratory for more basic research in materials science and semiconductor physics, in which thin films of CdHgTe are grown by molecular beam epitaxy and processed into IR detectors by various techniques. FFI also has a lot of experience in research and development of tunable infrared lasers for various applications. Norwegian industrial activities include production of infrared homing anti-ship missiles, laser rangefinders, various infrared gas sensors, hyperspectral cameras, and fiberoptic sensor systems for structural health monitoring and offshore oil well diagnostics.

Image sensor with motion artifact supression and anti-blooming

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Wrigley, Chris (Inventor); Yang, Guang (Inventor); Yadid-Pecht, Orly (Inventor)

2006-01-01

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

Electron gas grid semiconductor radiation detectors

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

Design of WO3-SnO2 core-shell nanofibers and their enhanced gas sensing performance based on different work function

NASA Astrophysics Data System (ADS)

Li, Feng; Gao, Xing; Wang, Rui; Zhang, Tong

2018-06-01

In this work, core-shell WO3-SnO2 (CS-WS) nanofibers (NFs) have been successfully synthesized via a coaxial electrospinning approach. The structure and morphology characteristics of the resultant products were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectra (XPS). To investigate the sensing mechanism of the CS-WS NFs, sensors based on SnO2 NFs, WO3 NFs, and SnO2-WO3 composite NFs were fabricated respectively, and their gas sensing properties were investigated by using CO, ethanol, toluene, acetone, and ammonia as the test gas. The results indicated that the CS-WS NFs exhibited a good response to ethanol (5.09 at 10 ppm) and short response/recovery time (18.5 s and 282 s) compared with the other test gases. The enhanced ethanol sensing properties of CS-WS NFs compared with those of SnO2 NFs were closely associated with the CS structure and its derivative effect due to the different work function of SnO2 and WO3. The approach proposed in this study may contribute to the realization of more sensitive metal oxide semiconductor (MOS) core-shell heterostructure sensors.

Towards point of care testing for C. difficile infection by volatile profiling, using the combination of a short multi-capillary gas chromatography column with metal oxide sensor detection

NASA Astrophysics Data System (ADS)

McGuire, N. D.; Ewen, R. J.; de Lacy Costello, B.; Garner, C. E.; Probert, C. S. J.; Vaughan, K.; Ratcliffe, N. M.

2014-06-01

Rapid volatile profiling of stool sample headspace was achieved using a combination of short multi-capillary chromatography column (SMCC), highly sensitive heated metal oxide semiconductor sensor and artificial neural network software. For direct analysis of biological samples this prototype offers alternatives to conventional gas chromatography (GC) detectors and electronic nose technology. The performance was compared to an identical instrument incorporating a long single capillary column (LSCC). The ability of the prototypes to separate complex mixtures was assessed using gas standards and homogenized in house ‘standard’ stool samples, with both capable of detecting more than 24 peaks per sample. The elution time was considerably faster with the SMCC resulting in a run time of 10 min compared to 30 min for the LSCC. The diagnostic potential of the prototypes was assessed using 50 C. difficile positive and 50 negative samples. The prototypes demonstrated similar capability of discriminating between positive and negative samples with sensitivity and specificity of 85% and 80% respectively. C. difficile is an important cause of hospital acquired diarrhoea, with significant morbidity and mortality around the world. A device capable of rapidly diagnosing the disease at the point of care would reduce cases, deaths and financial burden.

Investigation of VOCs associated with different characteristics of breast cancer cells

PubMed Central

Lavra, Luca; Catini, Alexandro; Ulivieri, Alessandra; Capuano, Rosamaria; Baghernajad Salehi, Leila; Sciacchitano, Salvatore; Bartolazzi, Armando; Nardis, Sara; Paolesse, Roberto; Martinelli, Eugenio; Di Natale, Corrado

2015-01-01

The efficacy of breath volatile organic compounds (VOCs) analysis for the screening of patients bearing breast cancer lesions has been demonstrated by using gas chromatography and artificial olfactory systems. On the other hand, in-vitro studies suggest that VOCs detection could also give important indications regarding molecular and tumorigenic characteristics of tumor cells. Aim of this study was to analyze VOCs in the headspace of breast cancer cell lines in order to ascertain the potentiality of VOCs signatures in giving information about these cells and set-up a new sensor system able to detect breast tumor-associated VOCs. We identified by Gas Chromatography-Mass Spectrometry analysis a VOCs signature that discriminates breast cancer cells for: i) transformed condition; ii) cell doubling time (CDT); iii) Estrogen and Progesterone Receptors (ER, PgR) expression, and HER2 overexpression. Moreover, the signals obtained from a temperature modulated metal oxide semiconductor gas sensor can be classified in order to recognize VOCs signatures associated with breast cancer cells, CDT and ER expression. Our results demonstrate that VOCs analysis could give clinically relevant information about proliferative and molecular features of breast cancer cells and pose the basis for the optimization of a low-cost diagnostic device to be used for tumors characterization. PMID:26304457

An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors.

PubMed

Liu, Jiangwei; Koide, Yasuo

2018-06-04

Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high- k oxides on hydrogenated-diamond (H-diamond) for metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High- k oxide insulators are deposited using atomic layer deposition (ALD) and sputtering deposition (SD) techniques. Electrical properties of the H-diamond MOS capacitors with high- k oxides of ALD-Al₂O₃, ALD-HfO₂, ALD-HfO₂/ALD-Al₂O₃ multilayer, SD-HfO₂/ALD-HfO₂ bilayer, SD-TiO₂/ALD-Al₂O₃ bilayer, and ALD-TiO₂/ALD-Al₂O₃ bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al₂O₃/H-diamond and SD-HfO₂/ALD-HfO₂/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO₂/ALD-Al₂O₃ bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p -type channel characteristics for the ALD-Al₂O₃/H-diamond, SD-HfO₂/ALD-HfO₂/H-diamond, and ALD-TiO₂/ALD-Al₂O₃/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high- k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.

Hybrid organic semiconductor lasers for bio-molecular sensing.

PubMed

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

Method for depositing high-quality microcrystalline semiconductor materials

DOEpatents

Guha, Subhendu [Bloomfield Hills, MI; Yang, Chi C [Troy, MI; Yan, Baojie [Rochester Hills, MI

2011-03-08

A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.

Vacancy-like defects in nanocrystalline SnO2: influence of the annealing treatment under different atmospheres

NASA Astrophysics Data System (ADS)

Macchi, C.; Ponce, M. A.; Desimone, P. M.; Aldao, C. M.; Somoza, A.

2018-03-01

The study of electronic and chemical properties of semiconductor oxides is motivated by their several applications. In particular, tin oxide is widely used as a solid state gas sensor material. In this regard, the defect structure has been proposed to be crucial in determining the resulting film conductivity and then its sensitivity. Here, the characteristics of vacancy-like defects in nanocrystalline commercial high-purity tin oxide powders and the influence of the annealing treatment under different atmospheres are presented. Specifically, SnO2 nanopowders were annealed at 330 °C under three different types of atmospheres: inert (vacuum), oxidative (oxygen) and reductive (hydrogen). The obtained experimental results are discussed in terms of the vacancy-like defects detected, shedding light to the basic conduction mechanisms, which are responsible for gas detection.

Harsh-Environment Solid-State Gamma Detector for Down-hole Gas and Oil Exploration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peter Sandvik; Stanislav Soloviev; Emad Andarawis

2007-08-10

The goal of this program was to develop a revolutionary solid-state gamma-ray detector suitable for use in down-hole gas and oil exploration. This advanced detector would employ wide-bandgap semiconductor technology to extend the gamma sensor's temperature capability up to 200 C as well as extended reliability, which significantly exceeds current designs based on photomultiplier tubes. In Phase II, project tasks were focused on optimization of the final APD design, growing and characterizing the full scintillator crystals of the selected composition, arranging the APD device packaging, developing the needed optical coupling between scintillator and APD, and characterizing the combined elements asmore » a full detector system preparing for commercialization. What follows is a summary report from the second 18-month phase of this program.« less

Optimization of Perovskite Gas Sensor Performance: Characterization, Measurement and Experimental Design.

PubMed

Bertocci, Francesco; Fort, Ada; Vignoli, Valerio; Mugnaini, Marco; Berni, Rossella

2017-06-10

Eight different types of nanostructured perovskites based on YCoO 3 with different chemical compositions are prepared as gas sensor materials, and they are studied with two target gases NO 2 and CO. Moreover, a statistical approach is adopted to optimize their performance. The innovative contribution is carried out through a split-plot design planning and modeling, also involving random effects, for studying Metal Oxide Semiconductors (MOX) sensors in a robust design context. The statistical results prove the validity of the proposed approach; in fact, for each material type, the variation of the electrical resistance achieves a satisfactory optimized value conditional to the working temperature and by controlling for the gas concentration variability. Just to mention some results, the sensing material YCo 0 . 9 Pd 0 . 1 O 3 (Mt1) achieved excellent solutions during the optimization procedure. In particular, Mt1 resulted in being useful and feasible for the detection of both gases, with optimal response equal to +10.23% and working temperature at 312 ∘ C for CO (284 ppm, from design) and response equal to -14.17% at 185 ∘ C for NO 2 (16 ppm, from design). Analogously, for NO 2 (16 ppm, from design), the material type YCo 0 . 9 O 2 . 85 + 1 % Pd (Mt8) allows for optimizing the response value at - 15 . 39 % with a working temperature at 181 . 0 ∘ C, whereas for YCo 0 . 95 Pd 0 . 05 O 3 (Mt3), the best response value is achieved at - 15 . 40 % with the temperature equal to 204 ∘ C.

Optimization of Perovskite Gas Sensor Performance: Characterization, Measurement and Experimental Design

PubMed Central

Bertocci, Francesco; Fort, Ada; Vignoli, Valerio; Mugnaini, Marco; Berni, Rossella

2017-01-01

Eight different types of nanostructured perovskites based on YCoO3 with different chemical compositions are prepared as gas sensor materials, and they are studied with two target gases NO2 and CO. Moreover, a statistical approach is adopted to optimize their performance. The innovative contribution is carried out through a split-plot design planning and modeling, also involving random effects, for studying Metal Oxide Semiconductors (MOX) sensors in a robust design context. The statistical results prove the validity of the proposed approach; in fact, for each material type, the variation of the electrical resistance achieves a satisfactory optimized value conditional to the working temperature and by controlling for the gas concentration variability. Just to mention some results, the sensing material YCo0.9Pd0.1O3 (Mt1) achieved excellent solutions during the optimization procedure. In particular, Mt1 resulted in being useful and feasible for the detection of both gases, with optimal response equal to +10.23% and working temperature at 312∘C for CO (284 ppm, from design) and response equal to −14.17% at 185∘C for NO2 (16 ppm, from design). Analogously, for NO2 (16 ppm, from design), the material type YCo0.9O2.85+1%Pd (Mt8) allows for optimizing the response value at −15.39% with a working temperature at 181.0∘C, whereas for YCo0.95Pd0.05O3 (Mt3), the best response value is achieved at −15.40% with the temperature equal to 204∘C. PMID:28604587

A microfluidic device for open loop stripping of volatile organic compounds.

PubMed

Cvetković, Benjamin Z; Dittrich, Petra S

2013-03-01

The detection of volatile organic compounds is of great importance for assessing the quality of water. In this contribution, we describe a miniaturized stripping device that allows fast online detection of organic solvents in water. The core component is a glass microfluidic chip that facilitates the creation of an annular-flowing stream of water and nitrogen gas. Volatile compounds are transferred efficiently from the water into the gas phase along the microfluidic pathway at room temperature within less than 5 s. Before exiting the microchip, the liquid phase is separated from the enriched gas phase by incorporating side capillaries through which the hydrophilic water phase is withdrawn. The gas phase is conveniently collected at the outlet reservoir by tubing. Finally, a semiconductor gas sensor analyzes the concentration of (volatile) organic compounds in the nitrogen gas. The operation and use of the stripping device is demonstrated for the organic solvents THF, 1-propanol, toluene, ethylbenzene, benzaldehyde, and methanol. The mobile, inexpensive, and continuously operating system with liquid flow rates in the low range of microliters per minute can be connected to other detectors or implemented in chemical production line for process control.

High-resolution parallel-detection sensor array using piezo-phototronics effect

DOEpatents

Wang, Zhong L.; Pan, Caofeng

2015-07-28

A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Pillar-structured neutron detector based multiplicity system

DOE PAGES

Murphy, John W.; Shao, Qinghui; Voss, Lars F.; ...

2017-10-04

This work demonstrates the potential of silicon pillars filled with boron-10 as a sensor technology for a compact and portable neutron multiplicity system. Solid-state, semiconductor based neutron detectors may enable completely new detector form factors, offer an alternate approach to helium-3 based systems, and reduce detector weight and volume requirements. Thirty-two pillar-structured neutron detectors were assembled into a system with an active area of over 20 cm 2 and were used in this work to demonstrate the feasibility of this sensor technology as a potential replacement for helium-3 based gas detectors. Multiplicity measurements were successfully carried out using a californium-252more » neutron source, in which the source mass, system efficiency, and die-away time were determined. As a result, this demonstration shows that these solid-state detectors could allow for a more compact and portable system that could be used for special nuclear material identification in the field.« less

Pillar-structured neutron detector based multiplicity system

NASA Astrophysics Data System (ADS)

Murphy, John W.; Shao, Qinghui; Voss, Lars F.; Kerr, Phil L.; Fabris, Lorenzo; Conway, Adam M.; Nikolic, Rebecca J.

2018-01-01

This work demonstrates the potential of silicon pillars filled with boron-10 as a sensor technology for a compact and portable neutron multiplicity system. Solid-state, semiconductor based neutron detectors may enable completely new detector form factors, offer an alternate approach to helium-3 based systems, and reduce detector weight and volume requirements. Thirty-two pillar-structured neutron detectors were assembled into a system with an active area of over 20 cm2 and were used in this work to demonstrate the feasibility of this sensor technology as a potential replacement for helium-3 based gas detectors. Multiplicity measurements were successfully carried out using a californium-252 neutron source, in which the source mass, system efficiency, and die-away time were determined. This demonstration shows that these solid-state detectors could allow for a more compact and portable system that could be used for special nuclear material identification in the field.

Optical and Electronic NOx Sensors for Applications in Mechatronics

PubMed Central

Di Franco, Cinzia; Elia, Angela; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugarà, Pietro Mario; Ieva, Eliana; Cioffi, Nicola; Torsi, Luisa; Bruno, Giovanni; Losurdo, Maria; Garcia, Michael A.; Wolter, Scott D.; Brown, April; Ricco, Mario

2009-01-01

Current production and emerging NOx sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NOx show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NOx in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NOx sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling. PMID:22412315

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

NASA Astrophysics Data System (ADS)

Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R. H.; Plaisier, J. R.; Antonelli, M.

2017-03-01

In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

Development of Nanomechanical Sensors for Breast Cancer Biomarkers

DTIC Science & Technology

2008-06-01

semiconductor industry in developing large scale integrated circuits at very lost cost can lead to similar breakthroughs in array sensors for biomolecules of...insulated from the serum or buffer. The entire device is mounted onto a semiconductor chip carrier, for easy integration with electronics. Figure 3...Keithley 2400 source meter. The ac modulation and the dc bias are added by a noninverting summing circuit, which is integrated with the preamplifier

Electronic nose for the identification of pig feeding and ripening time in Iberian hams.

PubMed

Santos, J P; García, M; Aleixandre, M; Horrillo, M C; Gutiérrez, J; Sayago, I; Fernández, M J; Arés, L

2004-03-01

An electronic nose system to control the processing of dry-cured Iberian ham is presented. The sensors involved are tin oxide semiconductors thin films. They were prepared by RF sputtering. Some of the sensors were doped with metal catalysts as Pt and Pd, in order to improve the selectivity of the sensors. The multisensor with 16 semiconductor sensors, gave different responses from two types of dry-cured Iberian hams which differ in the feeding and curing time. The data has been analysed using the PCA (principal component analysis) and backpropagation and probabilistic neural networks. The analysis shows that different types of Iberian ham can be discriminated and identified successfully.

“Playing around” with Field-Effect Sensors on the Basis of EIS Structures, LAPS and ISFETs

PubMed Central

Schöning, Michael J.

2005-01-01

Microfabricated semiconductor devices are becoming increasingly relevant, also for the detection of biological and chemical quantities. Especially, the “marriage” of biomolecules and silicon technology often yields successful new sensor concepts. The fabrication techniques of such silicon-based chemical sensors and biosensors, respectively, will have a distinct impact in different fields of application such as medicine, food technology, environment, chemistry and biotechnology as well as information processing. Moreover, scientists and engineers are interested in the analytical benefits of miniaturised and microfabricated sensor devices. This paper gives a survey on different types of semiconductor-based field-effect structures that have been recently developed in our laboratory.

Direct analysis of ultra-trace semiconductor gas by inductively coupled plasma mass spectrometry coupled with gas to particle conversion-gas exchange technique.

PubMed

Ohata, Masaki; Sakurai, Hiromu; Nishiguchi, Kohei; Utani, Keisuke; Günther, Detlef

2015-09-03

An inductively coupled plasma mass spectrometry (ICPMS) coupled with gas to particle conversion-gas exchange technique was applied to the direct analysis of ultra-trace semiconductor gas in ambient air. The ultra-trace semiconductor gases such as arsine (AsH3) and phosphine (PH3) were converted to particles by reaction with ozone (O3) and ammonia (NH3) gases within a gas to particle conversion device (GPD). The converted particles were directly introduced and measured by ICPMS through a gas exchange device (GED), which could penetrate the particles as well as exchange to Ar from either non-reacted gases such as an air or remaining gases of O3 and NH3. The particle size distribution of converted particles was measured by scanning mobility particle sizer (SMPS) and the results supported the elucidation of particle agglomeration between the particle converted from semiconductor gas and the particle of ammonium nitrate (NH4NO3) which was produced as major particle in GPD. Stable time-resolved signals from AsH3 and PH3 in air were obtained by GPD-GED-ICPMS with continuous gas introduction; however, the slightly larger fluctuation, which could be due to the ionization fluctuation of particles in ICP, was observed compared to that of metal carbonyl gas in Ar introduced directly into ICPMS. The linear regression lines were obtained and the limits of detection (LODs) of 1.5 pL L(-1) and 2.4 nL L(-1) for AsH3 and PH3, respectively, were estimated. Since these LODs revealed sufficiently lower values than the measurement concentrations required from semiconductor industry such as 0.5 nL L(-1) and 30 nL L(-1) for AsH3 and PH3, respectively, the GPD-GED-ICPMS could be useful for direct and high sensitive analysis of ultra-trace semiconductor gas in air. Copyright © 2015 Elsevier B.V. All rights reserved.

Promotion of acceptor formation in SnO2 nanowires by e-beam bombardment and impacts to sensor application

PubMed Central

Sub Kim, Sang; Gil Na, Han; Woo Kim, Hyoun; Kulish, Vadym; Wu, Ping

2015-01-01

We have realized a p-type-like conduction in initially n-type SnO2 nanowires grown using a vapor-liquid-solid method. The transition was achieved by irradiating n-type SnO2 nanowires with a high-energy electron beam, without intentional chemical doping. The nanowires were irradiated at doses of 50 and 150 kGy, and were then used to fabricate NO2 gas sensors, which exhibited n-type and p-type conductivities, respectively. The tuneability of the conduction behavior is assumed to be governed by the formation of tin vacancies (under high-energy electron beam irradiation), because it is the only possible acceptor, excluding all possible defects via density functional theory (DFT) calculations. The effect of external electric fields on the defect stability was studied using DFT calculations. The measured NO2 sensing dynamics, including response and recovery times, were well represented by the electron-hole compensation mechanism from standard electron-hole gas equilibrium statistics. This study elucidates the charge-transport characteristics of bipolar semiconductors that underlie surface chemical reactions. The principles derived will guide the development of future SnO2-based electronic and electrochemical devices. PMID:26030815

Organic-on-silicon complementary metal-oxide-semiconductor colour image sensors.

PubMed

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-12

Complementary metal-oxide-semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor.

Organic-on-silicon complementary metal–oxide–semiconductor colour image sensors

PubMed Central

Lim, Seon-Jeong; Leem, Dong-Seok; Park, Kyung-Bae; Kim, Kyu-Sik; Sul, Sangchul; Na, Kyoungwon; Lee, Gae Hwang; Heo, Chul-Joon; Lee, Kwang-Hee; Bulliard, Xavier; Satoh, Ryu-Ichi; Yagi, Tadao; Ro, Takkyun; Im, Dongmo; Jung, Jungkyu; Lee, Myungwon; Lee, Tae-Yon; Han, Moon Gyu; Jin, Yong Wan; Lee, Sangyoon

2015-01-01

Complementary metal–oxide–semiconductor (CMOS) colour image sensors are representative examples of light-detection devices. To achieve extremely high resolutions, the pixel sizes of the CMOS image sensors must be reduced to less than a micron, which in turn significantly limits the number of photons that can be captured by each pixel using silicon (Si)-based technology (i.e., this reduction in pixel size results in a loss of sensitivity). Here, we demonstrate a novel and efficient method of increasing the sensitivity and resolution of the CMOS image sensors by superposing an organic photodiode (OPD) onto a CMOS circuit with Si photodiodes, which consequently doubles the light-input surface area of each pixel. To realise this concept, we developed organic semiconductor materials with absorption properties selective to green light and successfully fabricated highly efficient green-light-sensitive OPDs without colour filters. We found that such a top light-receiving OPD, which is selective to specific green wavelengths, demonstrates great potential when combined with a newly designed Si-based CMOS circuit containing only blue and red colour filters. To demonstrate the effectiveness of this state-of-the-art hybrid colour image sensor, we acquired a real full-colour image using a camera that contained the organic-on-Si hybrid CMOS colour image sensor. PMID:25578322

Evaluation of Food Freshness and Locality by Odor Sensor

NASA Astrophysics Data System (ADS)

Koike, Takayuki; Shimada, Koji; Kamimura, Hironobu; Kaneki, Noriaki

The aim of this study was to investigate whether food freshness and locality can be classified using a food evaluation system consisting four SnO2-semiconductor gas sensors and a solid phase column, into which collecting aroma materials. The temperature of sensors was periodically changed to be in unsteady state and thus, the sensor information was increased. The parameters (in quefrency band) were extracted from sensor information using cepstrum analysis that enable to separate superimposed information on sinusoidal wave. The quefrency was used as parameters for principal component and discriminant analyses (PCA and DCA) to detect food freshness and food localities. We used three kinds of strawberries, people can perceive its odors, passed from one to three days after harvest, and kelps and Ceylon tea, people are hardly to perceive its odor, corrected from five areas as sample. Then, the deterioration of strawberries and localities of kelps and Ceylon teas were visually evaluated using the numerical analyses. While the deteriorations were classified using PCA or DCA, the localities were classified only by DCA. The findings indicate that, although odorant intensity influenced the method detecting food quality, the quefrency obtained from odorant information using cepstrum analysis were available to detect the difference in the freshness and the localities of foods.

Semiconductor sensor embedded microfluidic chip for protein biomarker detection using a bead-based immunoassay combined with deoxyribonucleic acid strand labeling.

PubMed

Lin, Yen-Heng; Peng, Po-Yu

2015-04-15

Two major issues need to be addressed in applying semiconductor biosensors to detecting proteins in immunoassays. First, the length of the antibody on the sensor surface surpasses the Debye lengths (approximately 1 nm, in normal ionic strength solution), preventing certain specifically bound proteins from being tightly attached to the sensor surface. Therefore, these proteins do not contribute to the sensor's surface potential change. Second, these proteins carry a small charge and can be easily affected by the pH of the surrounding solution. This study proposes a magnetic bead-based immunoassay using a secondary antibody to label negatively charged DNA fragments for signal amplification. An externally imposed magnetic force attaches the analyte tightly to the sensor surface, thereby effectively solving the problem of the analyte protein's distance to the sensor surface surpassing the Debye lengths. In addition, a normal ion intensity buffer can be used without dilution for the proposed method. Experiments revealed that the sensitivity can be improved by using a longer DNA fragment for labeling and smaller magnetic beads as solid support for the antibody. By using a 90 base pair DNA label, the signal was 15 times greater than that without labeling. In addition, by using a 120 nm magnetic bead, a minimum detection limit of 12.5 ng mL(-1) apolipoprotein A1 can be measured. Furthermore, this study integrates a semiconductor sensor with a microfluidic chip. With the help of microvalves and micromixers in the chip, the length of the mixing step for each immunoassay has been reduced from 1h to 20 min, and the sample volume has been reduced from 80 μL to 10 μL. In practice, a protein biomarker in a urinary bladder cancer patient's urine was successfully measured using this technique. This study provides a convenient and effective method to measure protein using a semiconductor sensor. Copyright © 2015 Elsevier B.V. All rights reserved.

A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

DTIC Science & Technology

2014-01-01

ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Toward hydrogen detection at room temperature with printed ZnO nanoceramics films activated with halogen lighting

NASA Astrophysics Data System (ADS)

Nguyen, Van Son; Jubera, Véronique; Garcia, Alain; Debéda, Hélène

2015-12-01

Though semiconducting properties of ZnO have been extensively investigated under hazardous gases, research is still necessary for low-cost sensors working at room temperature. Study of printed ZnO nanopowders-based sensors has been undertaken for hydrogen detection. A ZnO paste made with commercial nanopowders is deposited onto interdigitated Pt electrodes and sintered at 400 °C. The ZnO layer structure and morphology are first examined by XRD, SEM, AFM and emission/excitation spectra prior to the study of the effect of UV-light on the electrical conduction of the semiconductor oxide. The response to hydrogen exposure is subsequently examined, showing that low UV-light provided by halogen lighting enhances the gas response and allows detection at room temperature with gas responses similar to those obtained in dark conditions at 150 °C. A gas response of 44% (relative change in current) under 300 ppm is obtained at room temperature. Moreover, it is demonstrated that very low UV-light power (15 μW/mm2) provided by the halogen lamp is sufficient to give sensitivities as high as those for much higher powers obtained with a UV LED (7.7 mW/mm2). These results are comparable to those obtained by others for 1D or 2D ZnO nanostructures working at room temperature or at temperatures up to 250 °C.

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

NASA Astrophysics Data System (ADS)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.

Active pixel sensors with substantially planarized color filtering elements

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor)

1999-01-01

A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

Optical and Electronic NO(x) Sensors for Applications in Mechatronics.

PubMed

Di Franco, Cinzia; Elia, Angela; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugarà, Pietro Mario; Ieva, Eliana; Cioffi, Nicola; Torsi, Luisa; Bruno, Giovanni; Losurdo, Maria; Garcia, Michael A; Wolter, Scott D; Brown, April; Ricco, Mario

2009-01-01

Current production and emerging NO(x) sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NO(x) show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NO(x) in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NO(x) sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling.

Differential multi-MOSFET nuclear radiation sensor

NASA Technical Reports Server (NTRS)

Deoliveira, W. A.

1977-01-01

Circuit allows minimization of thermal-drift errors, low power consumption, operation over wide dynamic range, improved sensitivity and stability with metaloxide-semiconductor field-effect transistor sensors.

Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

PubMed

Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

2011-06-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

The digital compensation technology system for automotive pressure sensor

NASA Astrophysics Data System (ADS)

Guo, Bin; Li, Quanling; Lu, Yi; Luo, Zai

2011-05-01

Piezoresistive pressure sensor be made of semiconductor silicon based on Piezoresistive phenomenon, has many characteristics. But since the temperature effect of semiconductor, the performance of silicon sensor is also changed by temperature, and the pressure sensor without temperature drift can not be produced at present. This paper briefly describe the principles of sensors, the function of pressure sensor and the various types of compensation method, design the detailed digital compensation program for automotive pressure sensor. Simulation-Digital mixed signal conditioning is used in this dissertation, adopt signal conditioning chip MAX1452. AVR singlechip ATMEGA128 and other apparatus; fulfill the design of digital pressure sensor hardware circuit and singlechip hardware circuit; simultaneously design the singlechip software; Digital pressure sensor hardware circuit is used to implementing the correction and compensation of sensor; singlechip hardware circuit is used to implementing to controll the correction and compensation of pressure sensor; singlechip software is used to implementing to fulfill compensation arithmetic. In the end, it implement to measure the output of sensor, and contrast to the data of non-compensation, the outcome indicates that the compensation precision of compensated sensor output is obviously better than non-compensation sensor, not only improving the compensation precision but also increasing the stabilization of pressure sensor.

Contact CMOS imaging of gaseous oxygen sensor array

PubMed Central

Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

2014-01-01

We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

Contact CMOS imaging of gaseous oxygen sensor array.

PubMed

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

Characterization and Modeling of Electrical Response of Electrode Catalyzed Reactions in AIGaN/GaN-Based Gas Sensors

NASA Astrophysics Data System (ADS)

Melby, Jacob H.

AlGaN/GaN high electron mobility transistors (HEMT) and AlGaN/GaN diodes have promise for use as hydrogen and hydrocarbon sensors for a variety of industrial, military, and commercial applications. These semiconductor-based sensors have a number of advantages over other sensor technologies, such as the ability to operate at high temperatures, in corrosive environments, or under ionizing radiation. The high sensitivity of these devices to hydrogen-containing gases is associated with polarization differences within the AlGaN/GaN heterostructure that give rise to the formation of a two-dimensional electron gas (2DEG); exposure of the device to hydrogen changes the density of the 2DEG, which can be detected in a HEMT or diode structure. Although sensitivity to a range of gases has been reported, the factors that influence the behavior of the sensors are not well studied. The overarching goals of the research that follows were to determine how gas exposure conditions affect sensor behavior, to characterize and model the relationship between the electrical response of the sensors and the external gaseous environment, and to investigate the effects of using different metal catalysts on sensor behavior. The heterostructures used in this work were grown via metalorganic vapor phase epitaxy (MOVPE). Schottky diode and transistor devices employing platinum-group (Pd, Pt, Rh, Ir, Ru, and Os) catalysts were fabricated to allow electrical sensitivity in the presence of hydrogen and hydrogen containing gases. The generation of atomic hydrogen on the catalyst surface results in the rapid formation of hydrogen dipoles at the metal-semiconductor interface, which produces a measurable electronic response. The electrical response of Pt-gated HEMT-based sensors were measured in a flowing gaseous stream consisting of hydrogen in a pure nitrogen diluent at ambient and elevated temperatures. The transistors exhibited excellent transfer characteristics for temperatures ranging from 25°C to 125°C. The absolute current change was measured as a function of hydrogen concentration and compared with simulated curves based on the Langmuir isotherm and four other modified isotherms at a sensor temperature of 125°C. The sensor response was found to monotonically increase for a wide range of hydrogen concentrations (500 ppb to 5 vol%). It was found that the Langmuir isotherm, which treats all hydrogen binding sites as equivalent, was inadequate to describe the sensor response. A simple two-state model involving two distinct hydrogen binding states that have previously been observed in surface studies was found to adequately describe the response of these sensors from 500 ppb to 5 vol% hydrogen in nitrogen. Other modified Langmuir models were also analyzed and compared with the two-state model. While the models based on modified isotherms all yielded good fits to the data, the simpler two-state model (based upon a weakly bound and strongly bound hydrogen atom) and the Sips model (with distribution of states skewed towards higher binding energies) more closely match results from surface studies of dissociative desorption of hydrogen on Pt. Either of these models should therefore serve as a reasonable foundation for understanding and modeling the response of AlGaN/GaN-based hydrogen sensors with Pt catalysts. The electrical response of a Pt-gated HEMT-based sensor was also measured in a flowing gaseous stream consisting of hydrogen in air at elevated temperatures. The sensor response was found to monotonically increase for a narrow range of hydrogen pressures (1000 ppm to 4 vol%). Oxygen is found to decrease sensor response magnitude and increase the sensor response time. A modified Langmuir isotherm was found to adequately describe the influence of oxygen on a Pt-gated HEMT-based sensor under a narrow range of conditions. Additional sensor measurements were conducted on AlGaN/GaN diode sensors employing a variety of platinum-group catalysts. The influence of oxygen on the sensor response was found to be highly dependent upon the chemistry of hydrogen-oxygen interaction on the catalyst interface. A sensor diode array was fabricated using a ternary Pdx CuyAu1-x-y composition spread alloy catalyst and tested in a flowing gaseous stream consisting of pure hydrogen in nitrogen at room temperature. The resulting diode sensitivity was mapped as a function of composition and revealed intriguing hot spots of hydrogen sensitivity. Numerous technological challenges prevented further exploration of the ternary alloy spread; however, the preliminary results of this structure suggest that a reduction in hydrogen binding energy on the surface can result in a substantial increase in hydrogen dipoles at the metal semiconductor interface. Sensitivity to methane and ethylene was demonstrated using AlGaN/GaN-based sensors. Detection of methane and ethylene require elevated temperatures to break the C-H bond and produce atomic hydrogen. The sensor response is significantly more complicated than hydrogen and not always well-behaved with respect to temperature and time. XPS measurements conducted at CMU indicate a buildup of carbon on the platinum surface upon hydrocarbon exposure, trending toward a saturated carbon content. Lastly, operation of a diode sensor was examined in-situ under high hydrostatic pressure (2000psi) in both pure water and helium. Numerous stability issues were addressed in the course of these experiments. The steady-state influence of hydrostatic pressures on the diode sensor was found to be negligible in the absence of hydrogen. Hydrogen sensitivity was demonstrated in pure water with a hydrogen overpressure for devices employing an epoxy membrane. The same diode device failed to detect a large methane overpressure in water at room temperature and water at 80°C.

A Self-Sustained Wireless Multi-Sensor Platform Integrated with Printable Organic Sensors for Indoor Environmental Monitoring

PubMed Central

Wu, Chun-Chang; Chuang, Wen-Yu; Wu, Ching-Da; Su, Yu-Cheng; Huang, Yung-Yang; Huang, Yang-Jing; Peng, Sheng-Yu; Yu, Shih-An; Lin, Chih-Ting; Lu, Shey-Shi

2017-01-01

A self-sustained multi-sensor platform for indoor environmental monitoring is proposed in this paper. To reduce the cost and power consumption of the sensing platform, in the developed platform, organic materials of PEDOT:PSS and PEDOT:PSS/EB-PANI are used as the sensing films for humidity and CO2 detection, respectively. Different from traditional gas sensors, these organic sensing films can operate at room temperature without heating processes or infrared transceivers so that the power consumption of the developed humidity and the CO2 sensors can be as low as 10 μW and 5 μW, respectively. To cooperate with these low-power sensors, a Complementary Metal-Oxide-Semiconductor (CMOS) system-on-chip (SoC) is designed to amplify and to read out multiple sensor signals with low power consumption. The developed SoC includes an analog-front-end interface circuit (AFE), an analog-to-digital convertor (ADC), a digital controller and a power management unit (PMU). Scheduled by the digital controller, the sensing circuits are power gated with a small duty-cycle to reduce the average power consumption to 3.2 μW. The designed PMU converts the power scavenged from a dye sensitized solar cell (DSSC) module into required supply voltages for SoC circuits operation under typical indoor illuminance conditions. To our knowledge, this is the first multiple environmental parameters (Temperature/CO2/Humidity) sensing platform that demonstrates a true self-powering functionality for long-term operations. PMID:28353680

A Self-Sustained Wireless Multi-Sensor Platform Integrated with Printable Organic Sensors for Indoor Environmental Monitoring.

PubMed

Wu, Chun-Chang; Chuang, Wen-Yu; Wu, Ching-Da; Su, Yu-Cheng; Huang, Yung-Yang; Huang, Yang-Jing; Peng, Sheng-Yu; Yu, Shih-An; Lin, Chih-Ting; Lu, Shey-Shi

2017-03-29

A self-sustained multi-sensor platform for indoor environmental monitoring is proposed in this paper. To reduce the cost and power consumption of the sensing platform, in the developed platform, organic materials of PEDOT:PSS and PEDOT:PSS/EB-PANI are used as the sensing films for humidity and CO₂ detection, respectively. Different from traditional gas sensors, these organic sensing films can operate at room temperature without heating processes or infrared transceivers so that the power consumption of the developed humidity and the CO₂ sensors can be as low as 10 μW and 5 μW, respectively. To cooperate with these low-power sensors, a Complementary Metal-Oxide-Semiconductor (CMOS) system-on-chip (SoC) is designed to amplify and to read out multiple sensor signals with low power consumption. The developed SoC includes an analog-front-end interface circuit (AFE), an analog-to-digital convertor (ADC), a digital controller and a power management unit (PMU). Scheduled by the digital controller, the sensing circuits are power gated with a small duty-cycle to reduce the average power consumption to 3.2 μW. The designed PMU converts the power scavenged from a dye sensitized solar cell (DSSC) module into required supply voltages for SoC circuits operation under typical indoor illuminance conditions. To our knowledge, this is the first multiple environmental parameters (Temperature/CO₂/Humidity) sensing platform that demonstrates a true self-powering functionality for long-term operations.

VOCs monitoring system simulation and design

NASA Astrophysics Data System (ADS)

Caldararu, Florin; Vasile, Alexandru; Vatra, Cosmin

2010-11-01

The designed and simulated system will be used in the tanning industry, for Volatile Organic Compound (VOC) measurements. In this industry, about 90% of the solvent contained in the emulsions evaporates during its application, giving rise to VOC, which are at the same time hazardous atmospheric pollutants and one of the sources of ground level photochemical ozone formation. It results that a monitoring system is necessary in a leather finishing process, in order to detect hazardous VOC concentration and conducting process in order of VOC concentration diminishing. The paper presents the design of a VOC monitoring system, which includes sensors for VOCs and temperature, the conditioning circuitry for these sensors, the suction system of the gas in the hood, the data acquisition and the computing system and graphic interface. The used sensor in the detection system is a semiconductor sensor, produced by Figaro Engineering Inc., characterized by a short response time, high sensitivity at almost all VOC substances. The design of the conditioning circuitry and data acquisition is done in order to compensate the sensor response variation with temperature and to maintain the low response time of the sensor. The temperature compensation is obtained by using a thermistor circuitry, and the compensation is done within the software design. A Mitsubishi PLC is used to receive the output signals of the circuits including the sensor and of the thermistor, respectively. The acquisition and computing system is done using Mitsubishi ALPHA 2 controller and a graphical terminal, GOT 1000.

Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction.

PubMed

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-10-21

High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.

Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

PubMed Central

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-01-01

High-response organic field-effect transistor (OFET)-based NO2 sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO2 analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO2. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO2 molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO2 sensors in future electronic nose and environment monitoring. PMID:27775653

Arrays of Nano Tunnel Junctions as Infrared Image Sensors

NASA Technical Reports Server (NTRS)

Son, Kyung-Ah; Moon, Jeong S.; Prokopuk, Nicholas

2006-01-01

Infrared image sensors based on high density rectangular planar arrays of nano tunnel junctions have been proposed. These sensors would differ fundamentally from prior infrared sensors based, variously, on bolometry or conventional semiconductor photodetection. Infrared image sensors based on conventional semiconductor photodetection must typically be cooled to cryogenic temperatures to reduce noise to acceptably low levels. Some bolometer-type infrared sensors can be operated at room temperature, but they exhibit low detectivities and long response times, which limit their utility. The proposed infrared image sensors could be operated at room temperature without incurring excessive noise, and would exhibit high detectivities and short response times. Other advantages would include low power demand, high resolution, and tailorability of spectral response. Neither bolometers nor conventional semiconductor photodetectors, the basic detector units as proposed would partly resemble rectennas. Nanometer-scale tunnel junctions would be created by crossing of nanowires with quantum-mechanical-barrier layers in the form of thin layers of electrically insulating material between them (see figure). A microscopic dipole antenna sized and shaped to respond maximally in the infrared wavelength range that one seeks to detect would be formed integrally with the nanowires at each junction. An incident signal in that wavelength range would become coupled into the antenna and, through the antenna, to the junction. At the junction, the flow of electrons between the crossing wires would be dominated by quantum-mechanical tunneling rather than thermionic emission. Relative to thermionic emission, quantum mechanical tunneling is a fast process.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Polymer waveguide grating sensor integrated with a thin-film photodetector

PubMed Central

Song, Fuchuan; Xiao, Jing; Xie, Antonio Jou; Seo, Sang-Woo

2014-01-01

This paper presents a planar waveguide grating sensor integrated with a photodetector (PD) for on-chip optical sensing systems which are suitable for diagnostics in the field and in-situ measurements. III–V semiconductor-based thin-film PD is integrated with a polymer based waveguide grating device on a silicon platform. The fabricated optical sensor successfully discriminates optical spectral characteristics of the polymer waveguide grating from the on-chip PD. In addition, its potential use as a refractive index sensor is demonstrated. Based on a planar waveguide structure, the demonstrated sensor chip may incorporate multiple grating waveguide sensing regions with their own optical detection PDs. In addition, the demonstrated processing is based on a post-integration process which is compatible with silicon complementary metal-oxide semiconductor (CMOS) electronics. Potentially, this leads a compact, chip-scale optical sensing system which can monitor multiple physical parameters simultaneously without need for external signal processing. PMID:24466407

Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haur Kao, Chyuan; Chun Liu, Che; Ueng, Herng-Yih

2014-05-14

Multianalyte electrolyte–insulator–semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na{sup +}, K{sup +}, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed formore » use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.« less

Synthesis, Structural and Morphological Property of BaSnO3 Nanopowder Prepared by Solid State Ceramic Method

NASA Astrophysics Data System (ADS)

John, Jibi; Mahadevan Pillai, V. P.; Thomas, Anitta Rose; Philip, Reji; Joseph, Jaison; Muthunatesan, S.; Ragavendran, V.; Prabhu, Radhakrishna

2017-05-01

BaSnO3 is a cubic perovskite-type oxide that behaves as an n-type semiconductor with a wide band gap of 3.4 eV and remains stable at temperatures up to 1000°C. It has wide applications such as thermally stable capacitors, humidity sensors, gas sensors, etc. Barium stannate has also been used in optical applications, in capacitors and ceramic boundary layers, and as a promising material to produce gas phase sensors for the detection of carbon monoxide and carbon dioxide. BaSnO3 powder was prepared by solid state ceramic method. X-ray diffraction pattern of the prepared sample presents all the characteristic peaks of cubic phase of BaSnO3 (JCPDScard no: 15 -0780). The lattice constant for the compound was calculated and found to be 4.101A0 which is in agreement with the reported value (4.112A0). The average size of the crystallites estimated by Debye Scherrer’s formula was found to be 49 nm shows the nanostructured nature. The Raman bands observed ~ 139, 833 and 1122 cm-1 can be assigned on the basis of the fundamental vibrations of SnO6 octahedron which has Oh symmetry, in the distorted perovskite structure. The SEM image shows a porous surface morphology with grains of cuboidal structure with well-defined grain boundaries. UV-Visible spectra shows BaSnO3powder exhibit high reflectance in the 400-700 nm range.

Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure

NASA Astrophysics Data System (ADS)

Lin, Yi-Ting; Huang, Chien-Shiang; Chow, Lee; Lan, Jyun-Ming; Yang, Chia-Ming; Chang, Liann-Be; Lai, Chao-Sung

2013-12-01

An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95 mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2011-10-11

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2012-08-07

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Biomolecule/nanomaterial hybrid systems for nanobiotechnology.

PubMed

Tel-Vered, Ran; Yehezkeli, Omer; Willner, Itamar

2012-01-01

The integration of biomolecules with metallic or semiconductor nanoparticles or carbon nanotubes yields new hybrid nanostructures of unique features that combine the properties of the biomolecules and of the nano-elements. These unique features of the hybrid biomolecule/nanoparticle systems provide the basis for the rapid development of the area of nanobiotechnology. Recent advances in the implementation of hybrid materials consisting of biomolecules and metallic nanoparticles or semiconductor quantum dots will be discussed. The following topics will be exemplified: (i) The electrical wiring of redox enzymes with electrodes by means of metallic nanoparticles or carbon nanotubes, and the application of the modified electrodes as amperometric biosensors or for the construction of biofuel cells. (ii) The biocatalytic growth of metallic nanoparticles as a means to construct optical or electrical sensors. (iii) The functionalization of semiconductor quantum dots with biomolecules and the application of the hybrid nanostructures for developing different optical sensors, including intracellular sensor systems. (iv) The use of biomolecule-metallic nanoparticle nanostructures as templates for growing metallic nanowires, and the construction of fuel-driven nano-transporters.

Highly Sensitive and Selective Ethanol Sensor Fabricated with In-Doped 3DOM ZnO.

PubMed

Wang, Zhihua; Tian, Ziwei; Han, Dongmei; Gu, Fubo

2016-03-02

ZnO is an important n-type semiconductor sensing material. Currently, much attention has been attracted to finding an effective method to prepare ZnO nanomaterials with high sensing sensitivity and excellent selectivity. A three-dimensionally ordered macroporous (3DOM) ZnO nanostructure with a large surface area is beneficial to gas and electron transfer, which can enhance the gas sensitivity of ZnO. Indium (In) doping is an effective way to improve the sensing properties of ZnO. In this paper, In-doped 3DOM ZnO with enhanced sensitivity and selectivity has been synthesized by using a colloidal crystal templating method. The 3DOM ZnO with 5 at. % of In-doping exhibits the highest sensitivity (∼88) to 100 ppm ethanol at 250 °C, which is approximately 3 times higher than that of pure 3DOM ZnO. The huge improvement to the sensitivity to ethanol was attributed to the increase in the surface area and the electron carrier concentration. The doping by In introduces more electrons into the matrix, which is helpful for increasing the amount of adsorbed oxygen, leading to high sensitivity. The In-doped 3DOM ZnO is a promising material for a new type of ethanol sensor.

Towards point of care testing for C. difficile infection by volatile profiling, using the combination of a short multi-capillary gas chromatography column with metal oxide sensor detection

PubMed Central

McGuire, N D; Ewen, R J; de Lacy Costello, B; Garner, C E; Probert, C S J; Vaughan, K.; Ratcliffe, N M

2016-01-01

Rapid volatile profiling of stool sample headspace was achieved using a combination of short multi-capillary chromatography column (SMCC), highly sensitive heated metal oxide semiconductor (MOS) sensor and artificial neural network (ANN) software. For direct analysis of biological samples this prototype offers alternatives to conventional GC detectors and electronic nose technology. The performance was compared to an identical instrument incorporating a long single capillary column (LSCC). The ability of the prototypes to separate complex mixtures was assessed using gas standards and homogenised in house ‘standard’ stool samples, with both capable of detecting more than 24 peaks per sample. The elution time was considerably faster with the SMCC resulting in a run time of 10 minutes compared to 30 minutes for the LSCC. The diagnostic potential of the prototypes was assessed using 50 C. difficile positive and 50 negative samples. The prototypes demonstrated similar capability of discriminating between positive and negative samples with sensitivity and specificity of 85% and 80% respectively. C. difficile is an important cause of hospital acquired diarrhoea, with significant morbidity and mortality around the world. A device capable of rapidly diagnosing the disease at the point of care would reduce cases, deaths and financial burden. PMID:27212803

Combustion synthesis of LaFeO{sub 3} sensing nanomaterial

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaza, F., E-mail: fabio.zaza@enea.it; Serra, E.; Pallozzi, V.

2015-06-23

Since industrial revolution, human activities drive towards unsustainable global economy due to the overexploitation of natural resources and the unacceptable emissions of pollution and greenhouse gases. In order to address that issue, engineering research has been focusing on gas sensors development for monitoring gas emissions and controlling the combustion process sustainability. Semiconductors metal oxides sensors are attractive technology because they require simple design and fabrication, involving high accessibility, small size and low cost. Perovskite oxides are the most promising sensing materials because sensitivity, selectivity, stability and speed-response can be modulated and optimized by changing the chemical composition. One of themore » most convenient synthesis process of perovskite is the citrate-nitrate auto-combustion method, in which nitrate is the oxidizing agent and citrate is the fuel and the chelating argent in the same time. Since the sensibility of perovskite oxides depends on the defective crystallographic structure and the nanomorphology, the experimental was designed in order to study the dependence of powder properties on the synthesis conditions, such as the solution acidity and the relative amount of metals, nitrates and citric acid. Crystalline structure was studied in depth for defining the effects of synthesis conditions on size, morphology and crystallographic structure of nanopowders of LaFeO{sub 3}.« less

Combustion synthesis of LaFeO3 sensing nanomaterial

NASA Astrophysics Data System (ADS)

Zaza, F.; Pallozzi, V.; Serra, E.; Pasquali, M.

2015-06-01

Since industrial revolution, human activities drive towards unsustainable global economy due to the overexploitation of natural resources and the unacceptable emissions of pollution and greenhouse gases. In order to address that issue, engineering research has been focusing on gas sensors development for monitoring gas emissions and controlling the combustion process sustainability. Semiconductors metal oxides sensors are attractive technology because they require simple design and fabrication, involving high accessibility, small size and low cost. Perovskite oxides are the most promising sensing materials because sensitivity, selectivity, stability and speed-response can be modulated and optimized by changing the chemical composition. One of the most convenient synthesis process of perovskite is the citrate-nitrate auto-combustion method, in which nitrate is the oxidizing agent and citrate is the fuel and the chelating argent in the same time. Since the sensibility of perovskite oxides depends on the defective crystallographic structure and the nanomorphology, the experimental was designed in order to study the dependence of powder properties on the synthesis conditions, such as the solution acidity and the relative amount of metals, nitrates and citric acid. Crystalline structure was studied in depth for defining the effects of synthesis conditions on size, morphology and crystallographic structure of nanopowders of LaFeO3.

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Mechanochemical synthesis and physico-chemical investigations of new materials for gas sensors

NASA Astrophysics Data System (ADS)

Shubenkova, E. G.

2018-01-01

Solid solutions of the InSb-ZnTe semiconductor system containing up to 20 mol.% of ZnTe were synthesized for the first time. The role of mechanochemical treatment in the process of obtaining solid solutions of this system is shown. Solid solutions in the InSb-ZnTe system have been identified by Raman spectroscopy, and the optical properties of its components have been studied. On the basis of an analysis of the anti-stokes spectral radiation distribution the solid solutions formation was identified both on the dependence of the spectral distribution maximum’s shift on the composition of the InSb1-x-ZnTex system, and by estimating the radiation intensity of the initial binary semiconductors at frequencies corresponding to the LO- and TO- vibrations of the binary compounds crystal lattice. The values of the band gap for InSb, (InSb)0.95(ZnTe)0.05 and (InSb)0.9(ZnTe)0.1 were calculated, their values were 0.22 eV, 0.30 eV and 0.38 eV, respectively.

A prototype portable breath acetone analyzer for monitoring fat loss.

PubMed

Toyooka, Tsuguyoshi; Hiyama, Satoshi; Yamada, Yuki

2013-09-01

Acetone contained in our exhaled breath is a metabolic product of the breakdown of body fat and is expected to be a good indicator of fat-burning. Typically, gas chromatography or mass spectrometry are used to measure low-concentration compounds in breath but such large instruments are not suitable for daily use by diet-conscious people. Here, we prototype a portable breath acetone analyzer that has two types of semiconductor-based gas sensors with different sensitivity characteristics, enabling the acetone concentration to be calculated while taking into account the presence of ethanol, hydrogen, and humidity. To investigate the accuracy of our prototype and its application in diet support, experiments were conducted on healthy adult volunteers. Breath acetone concentrations obtained from our prototype and from gas chromatography showed a strong correlation throughout the experiments. Moreover, body fat in subjects with a controlled caloric intake and taking exercise decreased significantly, whereas breath acetone concentrations in those subjects increased significantly. These results prove that our prototype is practical and useful for self-monitoring of fat-burning at home or outside. Our prototype will help to prevent and alleviate obesity and diabetes.

Self-Formed Channel Devices Based on Vertically Grown 2D Materials with Large-Surface-Area and Their Potential for Chemical Sensor Applications.

PubMed

Kim, Chaeeun; Park, Jun-Cheol; Choi, Sun Young; Kim, Yonghun; Seo, Seung-Young; Park, Tae-Eon; Kwon, Se-Hun; Cho, Byungjin; Ahn, Ji-Hoon

2018-04-01

2D layered materials with sensitive surfaces are promising materials for use in chemical sensing devices, owing to their extremely large surface-to-volume ratios. However, most chemical sensors based on 2D materials are used in the form of laterally defined active channels, in which the active area is limited to the actual device dimensions. Therefore, a novel approach for fabricating self-formed active-channel devices is proposed based on 2D semiconductor materials with very large surface areas, and their potential gas sensing ability is examined. First, the vertical growth phenomenon of SnS 2 nanocrystals is investigated with large surface area via metal-assisted growth using prepatterned metal electrodes, and then self-formed active-channel devices are suggested without additional pattering through the selective synthesis of SnS 2 nanosheets on prepatterned metal electrodes. The self-formed active-channel device exhibits extremely high response values (>2000% at 10 ppm) for NO 2 along with excellent NO 2 selectivity. Moreover, the NO 2 gas response of the gas sensing device with vertically self-formed SnS 2 nanosheets is more than two orders of magnitude higher than that of a similar exfoliated SnS 2 -based device. These results indicate that the facile device fabrication method would be applicable to various systems in which surface area plays an important role. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Direct protein detection with a nano-interdigitated array gate MOSFET.

PubMed

Tang, Xiaohui; Jonas, Alain M; Nysten, Bernard; Demoustier-Champagne, Sophie; Blondeau, Franoise; Prévot, Pierre-Paul; Pampin, Rémi; Godfroid, Edmond; Iñiguez, Benjamin; Colinge, Jean-Pierre; Raskin, Jean-Pierre; Flandre, Denis; Bayot, Vincent

2009-08-15

A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology.

High-Performance Flexible Force and Temperature Sensing Array with a Robust Structure

NASA Astrophysics Data System (ADS)

Kim, Min-Seok; Song, Han-Wook; Park, Yon-Kyu

We have developed a flexible tactile sensor array capable of sensing physical quantities, e.g. force and temperature with high-performances and high spatial resolution. The fabricated tactile sensor consists of 8 × 8 force measuring array with 1 mm spacing and a thin metal (copper) temperature sensor. The flexible force sensing array consists of sub-millimetre-size bar-shaped semi-conductor strain gage array attached to a thin and flexible printed circuit board covered by stretchable elastomeric material on both sides. This design incorporates benefits of both materials; the semi-conductor's high performance and the polymer's mechanical flexibility and robustness, while overcoming their drawbacks of those two materials. Special fabrication processes, so called “dry-transfer technique” have been used to fabricate the tactile sensor along with standard micro-fabrication processes.

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

PubMed Central

Irokawa, Yoshihiro

2011-01-01

In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

NASA Astrophysics Data System (ADS)

Laminack, William; Gole, James

2015-12-01

A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte-interface, and analyte-analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

Chip-scale fluorescence microscope based on a silo-filter complementary metal-oxide semiconductor image sensor.

PubMed

Ah Lee, Seung; Ou, Xiaoze; Lee, J Eugene; Yang, Changhuei

2013-06-01

We demonstrate a silo-filter (SF) complementary metal-oxide semiconductor (CMOS) image sensor for a chip-scale fluorescence microscope. The extruded pixel design with metal walls between neighboring pixels guides fluorescence emission through the thick absorptive filter to the photodiode of a pixel. Our prototype device achieves 13 μm resolution over a wide field of view (4.8 mm × 4.4 mm). We demonstrate bright-field and fluorescence longitudinal imaging of living cells in a compact, low-cost configuration.

High speed CMOS imager with motion artifact supression and anti-blooming

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Wrigley, Chris (Inventor); Yang, Guang (Inventor); Yadid-Pecht, Orly (Inventor)

2001-01-01

An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.

Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.

PubMed

Mun, Seohyun; Park, Yoonkyung; Lee, Yong-Eun Koo; Sung, Myung Mo

2017-11-28

A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.

Miniaturized photoacoustic spectrometer

DOEpatents

Okandan, Murat; Robinson, Alex; Nielson, Gregory N.; Resnick, Paul J.

2016-08-09

A low-power miniaturized photoacoustic sensor uses an optical microphone made by semiconductor fabrication techniques, and optionally allows for all-optical communication to and from the sensor. This allows integration of the photoacoustic sensor into systems with special requirements, such as those that would be reactive in an electrical discharge condition. The photoacoustic sensor can also be operated in various other modes with wide application flexibility.

Thermal Flow Sensors for Harsh Environments.

PubMed

Balakrishnan, Vivekananthan; Phan, Hoang-Phuong; Dinh, Toan; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-09-08

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving parts and higher sensitivity. In recent years, various thermal flow sensors have been developed to operate at temperatures above 500 °C. Microelectronic technologies such as silicon-on-insulator (SOI), and complementary metal-oxide semiconductor (CMOS) have been used to make thermal flow sensors. Thermal sensors with various heating and sensing materials such as metals, semiconductors, polymers and ceramics can be selected according to the targeted working temperature. The performance of these thermal flow sensors is evaluated based on parameters such as thermal response time, flow sensitivity. The data from thermal flow sensors reviewed in this paper indicate that the sensing principle is suitable for the operation under harsh environments. Finally, the paper discusses the packaging of the sensor, which is the most important aspect of any high-temperature sensing application. Other than the conventional wire-bonding, various novel packaging techniques have been developed for high-temperature application.

Eddy current sensor concepts for the Bridgman growth of semiconductors

NASA Astrophysics Data System (ADS)

Dharmasena, Kumar P.; Wadley, Haydn N. G.

1997-03-01

Electromagnetic finite element methods have been used to identify eddy current sensor designs for monitoring CdTe vertical Bridgman crystal growth. A model system consisting of pairs of silicon cylinders with electrical conductivities similar to those of solid and liquid CdTe has been used to evaluate the multifrequency response of several sensors designed for locating and characterizing the curvature of liquid-solid interfaces during vertical Bridgman growth. At intermediate frequencies (100-800 kHz), the sensor's imaginary impedance monotonically increases as interfacial curvature changes from concave to convex or the interface location moves upwards through the sensor. The experimental data are in excellent agreement with theoretical predictions. At higher test frequencies (˜ 5 MHz), the test circuit's parasitics contribute to the sensor's response. Even so, the predicted trends with interface location/curvature were found to be still preserved, and the experiments confirm that the sensor's high frequency response depends more on interface location and has only a small sensitivity to curvature. Multifrequency data obtained from these types of sensors have the potential to separately discriminate the location and the shape of liquid-solid interfaces during the vertical Bridgman growth of CdTe and other semiconductor materials of higher electrical conductivity.

Thermal Flow Sensors for Harsh Environments

PubMed Central

Dinh, Toan; Dao, Dzung Viet

2017-01-01

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving parts and higher sensitivity. In recent years, various thermal flow sensors have been developed to operate at temperatures above 500 °C. Microelectronic technologies such as silicon-on-insulator (SOI), and complementary metal-oxide semiconductor (CMOS) have been used to make thermal flow sensors. Thermal sensors with various heating and sensing materials such as metals, semiconductors, polymers and ceramics can be selected according to the targeted working temperature. The performance of these thermal flow sensors is evaluated based on parameters such as thermal response time, flow sensitivity. The data from thermal flow sensors reviewed in this paper indicate that the sensing principle is suitable for the operation under harsh environments. Finally, the paper discusses the packaging of the sensor, which is the most important aspect of any high-temperature sensing application. Other than the conventional wire-bonding, various novel packaging techniques have been developed for high-temperature application. PMID:28885595

Semiconductor acceleration sensor

NASA Astrophysics Data System (ADS)

Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

1996-09-01

This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

Sub-Nanoliter Spectroscopic Gas Sensor

PubMed Central

Alfeeli, Bassam; Pickrell, Gary; Wang, Anbo

2006-01-01

In this work, a new type of optical fiber based chemical sensor, the sub-nanoliter sample cell (SNSC) based gas sensor, is described and compared to existing sensors designs in the literature. This novel SNSC gas sensor is shown to have the capability of gas detection with a cell volume in the sub-nanoliter range. Experimental results for various configurations of the sensor design are presented which demonstrate the capabilities of the miniature gas sensor.

Development of the MOOSY4 eNose IoT for Sulphur-Based VOC Water Pollution Detection

PubMed Central

Climent, Enric; Pelegri-Sebastia, Jose; Sogorb, Tomas; Talens, J. B.; Chilo, Jose

2017-01-01

In this paper, we describe a new low-cost and portable electronic nose instrument, the Multisensory Odor Olfactory System MOOSY4. This prototype is based on only four metal oxide semiconductor (MOS) gas sensors suitable for IoT technology. The system architecture consists of four stages: data acquisition, data storage, data processing, and user interfacing. The designed eNose was tested with experiment for detection of volatile components in water pollution, as a dimethyl disulphide or dimethyl diselenide or sulphur. Therefore, the results provide evidence that odor information can be recognized with around 86% efficiency, detecting smells unwanted in the water and improving the quality control in bottled water factories. PMID:28825645

Passive absolute age and temperature history sensor

DOEpatents

Robinson, Alex; Vianco, Paul T.

2015-11-10

A passive sensor for historic age and temperature sensing, including a first member formed of a first material, the first material being either a metal or a semiconductor material and a second member formed of a second material, the second material being either a metal or a semiconductor material. A surface of the second member is in contact with a surface of the first member such that, over time, the second material of the second member diffuses into the first material of the first member. The rate of diffusion for the second material to diffuse into the first material depends on a temperature of the passive sensor. One of the electrical conductance, the electrical capacitance, the electrical inductance, the optical transmission, the optical reflectance, or the crystalline structure of the passive sensor depends on the amount of the second material that has diffused into the first member.

Ultra-sensitive Trace-Water Optical Sensor with In situ- synthesized Metal-Organic Framework in Glass Paper.

PubMed

Ohira, Shin-Ichi; Nakamura, Nao; Endo, Masaaki; Miki, Yusuke; Hirose, Yasuo; Toda, Kei

2018-01-01

Monitoring of trace water in industrial gases is strongly recommended because contaminants cause serious problems during use, especially in the semiconductor industry. An ultra-sensitive trace-water sensor was developed with an in situ-synthesized metal-organic framework as the sensing material. The sample gas is passed through the sensing membrane and efficiently and rapidly collected by the sensing material in the newly designed gas collection/detection cell. The sensing membrane, glass paper impregnated with copper 1,3,5-benzenetricarboxylate (Cu-BTC), is also newly developed. The amount and density of the sensing material in the sensing membrane must be well balanced to achieve rapid and sensitive responses. In the present study, Cu-BTC was synthesized in situ in glass paper. The developed system gave high sensing performances with a limit of detection (signal/noise ratio = 3) of 9 parts per billion by volume (ppbv) H 2 O and a 90% response time of 86 s for 200 ppbv H 2 O. The reproducibility of the responses within and between lots had relative standard deviations for 500 ppbv H 2 O of 0.8% (n = 10) and 1.5% (n = 3), respectively. The long-term (2 weeks) stability was 7.3% for 400 ppbv H 2 O and one-year continuous monitoring test showed the sensitivity change of <∼3% before and after the study. Furthermore, the system response was in good agreement with the response achieved in cavity ring-down spectroscopy. These performances are sufficient for monitoring trace water in industrial gases. The integrated system with light and gas transparent structure for gas collection/absorbance detection can also be used for other target gases, using specific metal-organic frameworks.

New experience in atmospheric monitoring in Moscow city on the base of WSN technology

NASA Astrophysics Data System (ADS)

Asavin, Alex; Litvinov, Artur; Baskakov, Sergey; Chesalova, Elena

2016-04-01

The aim of this report is to present the gas emission of H2 in the general composition of atmospheric pollution of Moscow city. We start the project at the beginning of 2015 year in two Moscow academicals organization -Vernadsky Institute of Geochemistry and Analytical Chemistry and Moscow Geological State Museum. One place is in the center of Moscow, near the Kremlin and other one is in the most clear zone of Moscow - Moscow State University place, Vorobyevy Mountains (high point of Moscow). We plan to compare these regions by the concentration of H2 and other gases (CH4, SO2) for green gas pollution. Application network of monitoring is composed of gas sensors (H2, CH4), complex autonomous equipment for measurement temperature, pressure, humidity and network of telecommunications (used ZigBee protocol). Our project offer the technical solutions for monitoring network on the base of WSN (wireless sensor network) technology and the high-sensitive sensors of hydrogen and methane, software and electronic equipment with a transmitter network. This work is the first project in Russia. Gas sensors for monitoring system were developed on the base of MIS-structures (metal-insulator-semiconductor). MIS-sensors are suitable for measuring the concentrations of the following gases: hydrogen, hydrogen sulphide, nitrogen dioxide, ethylmercaptan, chlorine and ammonia. The basis of the sensor is MIS - structure Pd-Ta2O5-SiO2-Si,), which capacitance changes when reaction with gases occurs. The sensor fabrication technology is based on the microelectronics device fabrication technologies and the thin film laser deposition technique. Sensor can be used for measuring the concentration of any gas among noted before, in ambient temperature range -30..+40°C and RH 30-90% (30°C).Three gas sensors with analog interface were made for our experimental monitoring system. Original calibration was made using calibration by special standard mixture of H2 and atmosphere. There are 10-15 points on the each calibration graphics with different H2 concentration in standard gas mixtures. The graphics represent the power functions. The accuracy of the approximating functions is 3-18 %. At low concentrations (H2 <3 ppm) - error is rather high (about 20%).So we think that 2 ppm is the low limit of measurement. The essential factor is a temperature drift. We estimate this drift as 20mV per 1 degree and make corrections, because measurements were made in wide temperature range (+29 - -20 C). To take this factor we added our network by meteorological sensors. Each sensor network node has a radio transceiver with an internal antenna or connection to an external antenna, a microcontroller, an electronic circuit for interfacing with the sensors and an energy source, usually a battery or an embedded form of energy harvesting. All nodes are equal and serve as routers, so there is no need to plan nodes placement in advance Mesh Network protocol. Every node maintains a local routing table with information about one or several neighbors. The signal transmission between nodes and router used radio channel 2.6 GHz. Communication between router and IT server used two methods: cable RS486 and GPRS modem. GPRS connection is unstable and influence on operating stability. There are some problems in using of directional antenna because of the high level of city's radio noises and radio interferences. Nevertheless, a number of experiments with use of different technical solutions allowed us to perform continuous monitoring during 2 months. As a result about 3 million data records were obtained during experimental works. This information provided an opportunity to develop the structure of database management systems to store data and the technology of online data collection from remote sensors. Using the abilities of program software a periodical (12h) automatic export/import was realized. Access to file on remote computers is opened using FTP protocol. Database forms derived tables for each sensors. We use triggers to modify data, for example, to modify signal from gas sensors to gas concentration, in depend of unique sensor name. Additional table gives geographical coordinates of each node. We use GIS project for visualization and data analysis. Experiences revealed the inverse relationship between H2 concentration and temperature and pressure. Also we revealed periodicity of gas concentration with different harmonics. We could not find in literatures the similar works of H2 monitoring in cites. Exclusion is the work of (Necki et al., 2014) to organize continue monitoring in Krakow and it neighborhood. Authors also note periodicity in gas concentration affected by the seasons (increase in wintertime), day time (auto traffic). The received data we consider as first experiments in organization of long time monitoring of cites atmosphere, using new technologies (WSN). This results we consider to be the first methodological experiments in the field of monitoring the atmosphere of the city by WSN technic. It is planned to update the correctness of the analysis based on a comparison with other gas analysis methods. Acknowledgements This study was supported by the program 44 presidium RAS "Search basic research for the development of the Russian Arctic" Reference Necki, Jaroslaw M.; Chmura, Lukasz; Bielewski, Jaroslaw; et al. Variability of Molecular Hydrogen in the Urban Atmosphere Based on Continuous Measurements in Krakow //Polish Journal of Environmental Studies 2014, V.23, Iss. 2, P. 427-434.

Producing CCD imaging sensor with flashed backside metal film

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor)

1988-01-01

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

CCD imaging sensor with flashed backside metal film

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor)

1991-01-01

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Nanoparticle-based gas sensors and methods of using the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mickelson, William; Zettl, Alex

Gas sensors are provided. The gas sensors include a gas sensing element having metal oxide nanoparticles and a thin-film heating element. Systems that include the gas sensors, as well as methods of using the gas sensors, are also provided. Embodiments of the present disclosure find use in a variety of different applications, including detecting whether an analyte is present in a gaseous sample.

Strategies for Improving the Performance of Sensors Based on Organic Field-Effect Transistors.

PubMed

Wu, Xiaohan; Mao, Shun; Chen, Junhong; Huang, Jia

2018-04-01

Organic semiconductors (OSCs) have been extensively studied as sensing channel materials in field-effect transistors due to their unique charge transport properties. Stimulation caused by its environmental conditions can readily change the charge-carrier density and mobility of OSCs. Organic field-effect transistors (OFETs) can act as both signal transducers and signal amplifiers, which greatly simplifies the device structure. Over the past decades, various sensors based on OFETs have been developed, including physical sensors, chemical sensors, biosensors, and integrated sensor arrays with advanced functionalities. However, the performance of OFET-based sensors still needs to be improved to meet the requirements from various practical applications, such as high sensitivity, high selectivity, and rapid response speed. Tailoring molecular structures and micro/nanofilm structures of OSCs is a vital strategy for achieving better sensing performance. Modification of the dielectric layer and the semiconductor/dielectric interface is another approach for improving the sensor performance. Moreover, advanced sensory functionalities have been achieved by developing integrated device arrays. Here, a brief review of strategies used for improving the performance of OFET sensors is presented, which is expected to inspire and provide guidance for the design of future OFET sensors for various specific and practical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon monoxide sensor and method of use thereof

DOEpatents

McDaniel; Anthony H. , Medlin; J. Will , Bastasz; Robert J.

2007-09-04

Carbon monoxide sensors suitable for use in hydrogen feed streams and methods of use thereof are disclosed. The sensors are palladium metal/insulator/semiconductor (Pd-MIS) sensors which may possess a gate metal layer having uniform, Type 1, or non-uniform, Type 2, film morphology. Type 1 sensors display an increased sensor response in the presence of carbon monoxide while Type 2 sensors display a decreased response to carbon monoxide. The methods and sensors disclosed herein are particularly suitable for use in proton exchange membrane fuel cells (PEMFCs).

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

NASA Technical Reports Server (NTRS)

Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

1994-01-01

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Ultra-Low-Power MEMS Selective Gas Sensors

NASA Technical Reports Server (NTRS)

Stetter, Joseph

2012-01-01

This innovation is a system for gas sensing that includes an ultra-low-power MEMS (microelectromechanical system) gas sensor, combined with unique electronic circuitry and a proprietary algorithm for operating the sensor. The electronics were created from scratch, and represent a novel design capable of low-power operation of the proprietary MEMS gas sensor platform. The algorithm is used to identify a specific target gas in a gas mixture, making the sensor selective to that target gas.

Modular Analytical Multicomponent Analysis in Gas Sensor Aarrays

PubMed Central

Chaiyboun, Ali; Traute, Rüdiger; Kiesewetter, Olaf; Ahlers, Simon; Müller, Gerhard; Doll, Theodor

2006-01-01

A multi-sensor system is a chemical sensor system which quantitatively and qualitatively records gases with a combination of cross-sensitive gas sensor arrays and pattern recognition software. This paper addresses the issue of data analysis for identification of gases in a gas sensor array. We introduce a software tool for gas sensor array configuration and simulation. It concerns thereby about a modular software package for the acquisition of data of different sensors. A signal evaluation algorithm referred to as matrix method was used specifically for the software tool. This matrix method computes the gas concentrations from the signals of a sensor array. The software tool was used for the simulation of an array of five sensors to determine gas concentration of CH4, NH3, H2, CO and C2H5OH. The results of the present simulated sensor array indicate that the software tool is capable of the following: (a) identify a gas independently of its concentration; (b) estimate the concentration of the gas, even if the system was not previously exposed to this concentration; (c) tell when a gas concentration exceeds a certain value. A gas sensor data base was build for the configuration of the software. With the data base one can create, generate and manage scenarios and source files for the simulation. With the gas sensor data base and the simulation software an on-line Web-based version was developed, with which the user can configure and simulate sensor arrays on-line.

Gas sensor protection device and method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyd, David; Magera, Craig

A gas sensor includes a sensor housing and a sensing element located within the sensor housing. The sensing element has a distal end and defines an axis. The gas sensor also includes a sensor protection device coupled to the sensor housing and at least partially surrounding the distal end of the sensing element. The sensor protection device includes a first member coupled to the housing, the first member having a generally rectangular cross-sectional shape in a plane perpendicular to the axis. The first member includes a gas inlet and a gas outlet. The sensor protection device also includes a secondmore » member coupled to the housing.« less

Macroporous Semiconductors

PubMed Central

Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen

2010-01-01

Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn; Xiong, S. J.; Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn

2016-08-08

The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.

Wireless Multiplexed Surface Acoustic Wave Sensors Project

NASA Technical Reports Server (NTRS)

Youngquist, Robert C.

2014-01-01

Wireless Surface Acoustic Wave (SAW) Sensor is a new technology for obtaining multiple, real-time measurements under extreme environmental conditions. This project plans to develop a wireless multiplexed sensor system that uses SAW sensors, with no batteries or semiconductors, that are passive and rugged, can operate down to cryogenic temperatures and up to hundreds of degrees C, and can be used to sense a wide variety of parameters over reasonable distances (meters).

Construction of 1D SnO2-coated ZnO nanowire heterojunction for their improved n-butylamine sensing performances

NASA Astrophysics Data System (ADS)

Wang, Liwei; Li, Jintao; Wang, Yinghui; Yu, Kefu; Tang, Xingying; Zhang, Yuanyuan; Wang, Shaopeng; Wei, Chaoshuai

2016-10-01

One-dimensional (1D) SnO2-coated ZnO nanowire (SnO2/ZnO NW) N-N heterojunctions were successfully constructed by an effective solvothermal treatment followed with calcination at 400 °C. The obtained samples were characterized by means of XRD, SEM, TEM, Scanning TEM coupled with EDS and XPS analysis, which confirmed that the outer layers of N-type SnO2 nanoparticles (avg. 4 nm) were uniformly distributed onto our pre-synthesized n-type ZnO nanowire supports (diameter 80~100 nm, length 12~16 μm). Comparisons of the gas sensing performances among pure SnO2, pure ZnO NW and the as-fabricated SnO2/ZnO NW heterojunctions revealed that after modification, SnO2/ZnO NW based sensor exhibited remarkably improved response, fast response and recovery speeds, good selectivity and excellent reproducibility to n-butylamine gas, indicating it can be used as promising candidates for high-performance organic amine sensors. The enhanced gas-sensing behavior should be attributed to the unique 1D wire-like morphology of ZnO support, the small size effect of SnO2 nanoparticles, and the semiconductor depletion layer model induced by the strong interfacial interaction between SnO2 and ZnO of the heterojunctions. The as-prepared SnO2/ZnO NW heterojunctions may also supply other novel applications in the fields like photocatalysis, lithium-ion batteries, waste water purification, and so on.

Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

NASA Astrophysics Data System (ADS)

Tu, Hongen

This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high-performance MEMS devices and electronics can be integrated into flexible substrates. The potential of our technology is enormous. Many wearable and implantable devices can be developed based on this technology.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1994-01-01

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

An integrated semiconductor device enabling non-optical genome sequencing.

PubMed

Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

2011-07-20

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

Dielectric response of a nondegenerate electron gas in semiconductor nanocrystallites

NASA Astrophysics Data System (ADS)

van Faassen, E.

1998-12-01

We investigate the low-frequency dielectric response of a dilute electron gas in a small spherical semiconductor particle. The flow of the electrons is described by hydrodynamic equations which incorporate the electrostatic interactions between the electrons in a self-consistent fashion. In the low-frequency regime, the dielectric loss is small and proportional to the frequency, despite substantial field penetration into the semiconductor. The loss remains small even for high doping levels due to effective cancellation between field-induced drift and diffusion. The model is used to estimate the complex dielectric constant of a system of weakly conducting nanosized semiconductor particles. The most prominent manifestation of spatial dispersion is that photoinduced changes in the real and imaginary parts of the dielectric constant are positive and of comparable magnitude.

Conductive polymer nanowire gas sensor fabricated by nanoscale soft lithography

NASA Astrophysics Data System (ADS)

Tang, Ning; Jiang, Yang; Qu, Hemi; Duan, Xuexin

2017-12-01

Resistive devices composed of one-dimensional nanostructures are promising candidates for the next generation of gas sensors. However, the large-scale fabrication of nanowires is still challenging, which restricts the commercialization of such devices. Here, we report a highly efficient and facile approach to fabricating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) nanowire chemiresistive gas sensors by nanoscale soft lithography. Well-defined sub-100 nm nanowires are fabricated on silicon substrate, which facilitates device integration. The nanowire chemiresistive gas sensor is demonstrated for NH3 and NO2 detection at room temperature and shows a limit of detection at ppb level, which is compatible with nanoscale PEDOT:PSS gas sensors fabricated with the conventional lithography technique. In comparison with PEDOT:PSS thin-film gas sensors, the nanowire gas sensor exhibits higher sensitivity and a much faster response to gas molecules.

Conductive polymer nanowire gas sensor fabricated by nanoscale soft lithography.

PubMed

Tang, Ning; Jiang, Yang; Qu, Hemi; Duan, Xuexin

2017-12-01

Resistive devices composed of one-dimensional nanostructures are promising candidates for the next generation of gas sensors. However, the large-scale fabrication of nanowires is still challenging, which restricts the commercialization of such devices. Here, we report a highly efficient and facile approach to fabricating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) nanowire chemiresistive gas sensors by nanoscale soft lithography. Well-defined sub-100 nm nanowires are fabricated on silicon substrate, which facilitates device integration. The nanowire chemiresistive gas sensor is demonstrated for NH 3 and NO 2 detection at room temperature and shows a limit of detection at ppb level, which is compatible with nanoscale PEDOT:PSS gas sensors fabricated with the conventional lithography technique. In comparison with PEDOT:PSS thin-film gas sensors, the nanowire gas sensor exhibits higher sensitivity and a much faster response to gas molecules.

Fiber optic gas sensor

NASA Technical Reports Server (NTRS)

Chen, Peng (Inventor); Buric, Michael P. (Inventor); Swinehart, Philip R. (Inventor); Maklad, Mokhtar S. (Inventor)

2010-01-01

A gas sensor includes an in-fiber resonant wavelength device provided in a fiber core at a first location. The fiber propagates a sensing light and a power light. A layer of a material is attached to the fiber at the first location. The material is able to absorb the gas at a temperature dependent gas absorption rate. The power light is used to heat the material and increases the gas absorption rate, thereby increasing sensor performance, especially at low temperatures. Further, a method is described of flash heating the gas sensor to absorb more of the gas, allowing the sensor to cool, thereby locking in the gas content of the sensor material, and taking the difference between the starting and ending resonant wavelengths as an indication of the concentration of the gas in the ambient atmosphere.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Physicochemical and Electrophysical Properties of Metal/Semiconductor Containing Nanostructured Composites

NASA Astrophysics Data System (ADS)

Gerasimov, G. N.; Gromov, V. F.; Trakhtenberg, L. I.

2018-06-01

The properties of nanostructured composites based on metal oxides and metal-polymer materials are analyzed, along with ways of preparing them. The effect the interaction between metal and semiconductor nanoparticles has on the conductivity, photoconductivity, catalytic activity, and magnetic, dielectric, and sensor properties of nanocomposites is discussed. It is shown that as a result of this interaction, a material can acquire properties that do not exist in systems of isolated particles. The transfer of electrons between metal particles of different sizes in polymeric matrices leads to specific dielectric losses, and to an increase in the rate and a change in the direction of chemical reactions catalyzed by these particles. The interaction between metal-oxide semiconductor particles results in the electronic and chemical sensitization of sensor effects in nanostructured composite materials. Studies on creating molecular machines (Brownian motors), devices for magnetic recording of information, and high-temperature superconductors based on nanostructured systems are reviewed.

Graphene nano-devices and nano-composites for structural, thermal and sensing applications

NASA Astrophysics Data System (ADS)

Yavari, Fazel

In this dissertation we have developed graphene-based nano-devices for applications in integrated circuits and gas sensors; as well as graphene-based nano-composites for applications in structures and thermal management. First, we have studied the bandgap of graphene for semiconductor applications. Graphene as a zero-bandgap material cannot be used in the semiconductor industry unless an effective method is developed to open the bandgap in this material. We have demonstrated that a bandgap of 0.206 eV can be opened in graphene by adsorption of water vapor molecules on its surface. Water molecules break the molecular symmetries of graphene resulting in a significant bandgap opening. We also illustrate that the lack of bandgap in graphene can be used to our advantage by making sensors that are able to detect low concentrations of gas molecules mixed in air. We have shown that 1-2 layers of graphene synthesized by chemical vapor deposition enables detection of trace amounts of NO 2 and NH3 in air at room temperature and atmospheric pressure. The gas species are detected by monitoring changes in electrical resistance of the graphene film due to gas adsorption. The sensor response time is inversely proportional to the gas concentration. Heating the film expels chemisorbed molecules from the graphene surface enabling reversible operation. The detection limits of ~100 parts-per-billion (ppb) for NO2 and ~500 ppb for NH3 obtained using this device are markedly superior to commercially available NO2 and NH3 detectors. This sensor is fabricated using individual graphene sheets that are exquisitely sensitive to the chemical environment. However, the fabrication and operation of devices that use individual nanostructures for sensing is complex, expensive and suffers from poor reliability due to contamination and large variability from sample-to-sample. To overcome these problems we have developed a gas sensor based on a porous 3D network of graphene sheets called graphene foam that is macroscopic and easy to mass produce. The walls of the foam are comprised of a few layers of graphene sheets resulting in high sensitivity. We demonstrate parts-per-million (ppm) level detection of NH3 and NO2 in air at room-temperature using this sensor. Further, the foam is a mechanically robust and flexible macro-scale network that is easy to contact (without lithography) and can rival the durability and affordability of traditional sensors. Moreover, Joule-heating expels chemisorbed molecules from the foam’s surface leading to fully-reversible and low-power operation. In the second part of this dissertation the focus is on graphene platelets and their incorporation into polymer matrices to improve their mechanical and thermal properties. We demonstrate the synthesis and fatigue characterization of fiberglass/epoxy composites with various weight fractions of graphene platelets infiltrated into the epoxy resin as well as directly spray-coated on to the glass micro-fibers. Remarkably, only ~0.2wt.% of graphene additives enhances the fatigue life of the composite in the flexural bending mode by up to 1200-fold. By contrast, under uniaxial tensile fatigue conditions, the graphene fillers resulted in ~3 to 5-fold increase in fatigue life. In-situ ultrasound analysis of the nanocomposite during the cyclic fatigue test suggests that the graphene network toughens the fiberglass/epoxy-matrix interface and prevents the delamination/buckling of the glass micro-fibers under compressive stress. Such fatigue-resistant hierarchical materials show potential to improve the safety, reliability, and cost-effectiveness of fiber-reinforced composites that are increasingly the material of choice in the aerospace, automotive, marine, sports, bio-medical and wind energy industries. We also investigated the effect of graphene platelets on thermal properties of Graphene/1-Octadecanol composite as a nano-structured phase change material (PCM) for energy storage applications. The liquid-solid phase change enthalpy, crystallization, and thermal conductivity of this composite were studied as a function of graphene content. The thermal conductivity (κ) of the nanocomposite increased by nearly 2.5-fold (~140% increase) upon ~4wt. % graphene addition while the drop in the heat of fusion (i.e. storage capacity) was only ~15.4%. The enhancement in thermal properties of 1-Octadecanol obtained with the addition of graphene is markedly superior to the effect of other nanofillers such as silver nanowires and carbon nanotubes reported previously in the literature. Boosting the thermal conductivity of organic PCMs without incurring a significant loss in the heat of fusion is one of the key issues in enabling their practical application as latent heat storage/release units for thermal management and thermal protection.

One-pot electrospinning and gas-sensing properties of LaMnO3 perovskite/SnO2 heterojunction nanofibers

NASA Astrophysics Data System (ADS)

Chen, Dongdong; Yi, Jianxin

2018-03-01

Using nanostructured composite materials is an effective way to obtain high-performance gas sensors. This work used p-type LaMnO3 perovskite-structured semiconductor as a novel promoter for SnO2 nanofibers and studied the gas-sensing characteristics. Nanofibers of 0-2.5-mol% LaMnO3/SnO2 were synthesized via one-pot electrospinning. Compared with pristine SnO2, LaMnO3/SnO2 composite nanofibers exhibited smaller particle size (10-30 nm) and higher BET surface area. XPS revealed that oxygen surface absorption decreased with increasing LaMnO3 content. 0.3-mol% LaMnO3/SnO2 exhibited significantly enhanced ethanol sensitivity relative to pristine SnO2. A response of 20 was obtained at the optimum temperature of 260 °C for 100-ppm ethanol. Higher LaMnO3 loading led to decrease of the ethanol response. The impact of LaMnO3 loading on the sensing behavior of SnO2 nanofibers was discussed in terms of p-n heterojunction formation and changes in the microstructure and catalytic properties.

Gas sensor with attenuated drift characteristic

DOEpatents

Chen, Ing-Shin [Danbury, CT; Chen, Philip S. H. [Bethel, CT; Neuner, Jeffrey W [Bethel, CT; Welch, James [Fairfield, CT; Hendrix, Bryan [Danbury, CT; Dimeo, Jr., Frank [Danbury, CT

2008-05-13

A sensor with an attenuated drift characteristic, including a layer structure in which a sensing layer has a layer of diffusional barrier material on at least one of its faces. The sensor may for example be constituted as a hydrogen gas sensor including a palladium/yttrium layer structure formed on a micro-hotplate base, with a chromium barrier layer between the yttrium layer and the micro-hotplate, and with a tantalum barrier layer between the yttrium layer and an overlying palladium protective layer. The gas sensor is useful for detection of a target gas in environments susceptible to generation or incursion of such gas, and achieves substantial (e.g., >90%) reduction of signal drift from the gas sensor in extended operation, relative to a corresponding gas sensor lacking the diffusional barrier structure of the invention

Emission of blue light from hydrogenated amorphous silicon carbide

NASA Astrophysics Data System (ADS)

Nevin, W. A.; Yamagishi, H.; Yamaguchi, M.; Tawada, Y.

1994-04-01

THE development of new electroluminescent materials is of current technological interest for use in flat-screen full-colour displays1. For such applications, amorphous inorganic semiconductors appear particularly promising, in view of the ease with which uniform films with good mechanical and electronic properties can be deposited over large areas2. Luminescence has been reported1 in the red-green part of the spectrum from amorphous silicon carbide prepared from gas-phase mixtures of silane and a carbon-containing species (usually methane or ethylene). But it is not possible to achieve blue luminescence by this approach. Here we show that the use of an aromatic species-xylene-as the source of carbon during deposition results in a form of amorphous silicon carbide that exhibits strong blue luminescence. The underlying structure of this material seems to be an unusual combination of an inorganic silicon carbide lattice with a substantial 'organic' π-conjugated carbon system, the latter dominating the emission properties. Moreover, the material can be readily doped with an electron acceptor in a manner similar to organic semiconductors3, and might therefore find applications as a conductivity- or colour-based chemical sensor.

Ultratrace Measurement of Acetone from Skin Using Zeolite: Toward Development of a Wearable Monitor of Fat Metabolism.

PubMed

Yamada, Yuki; Hiyama, Satoshi; Toyooka, Tsuguyoshi; Takeuchi, Shoji; Itabashi, Keiji; Okubo, Tatsuya; Tabata, Hitoshi

2015-08-04

Analysis of gases emitted from human skin and contained in human breath has received increasing attention in recent years for noninvasive clinical diagnoses and health checkups. Acetone emitted from human skin (skin acetone) should be a good indicator of fat metabolism, which is associated with diet and exercise. However, skin acetone is an analytically challenging target because it is emitted in very low concentrations. In the present study, zeolite was investigated for concentrating skin acetone for subsequent semiconductor-based analysis. The adsorption and desorption characteristics of five zeolites with different structures and those hydrophobicities were compared. A hydrophobic zeolite with relatively large pores (approximately 1.6 times larger than the acetone molecule diameter) was the best concentrator of skin acetone among the zeolites tested. The concentrator developed using zeolite was applied in a semiconductor-based gas sensor in a simulated mobile environment where the closed space was frequently collapsed to reflect the twisting and elastic movement of skin that would be encountered in a wearable device. These results could be used to develop a wearable analyzer for skin acetone, which would be a powerful tool for preventing and alleviating lifestyle-related diseases.

Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

PubMed Central

2011-01-01

Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored by SEM. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs and ohmic contacts on blank surfaces. Forward and reverse current-voltage characteristics of the diodes showed high rectification ratio and high Schottky barrier heights, giving evidence of very small Fermi level pinning. A large increase of current was observed after exposing diodes to flow of gas blend hydrogen in nitrogen. Current change ratio about 700,000 with 0.1% hydrogen blend was achieved, which is more than two orders-of-magnitude improvement over the best result reported previously. Hydrogen detection limit of the diodes was estimated at 1 ppm H2/N2. The diodes, besides this extremely high sensitivity, have been temporally stable and of inexpensive production. Relatively more expensive GaN diodes have potential for functionality at high temperatures. PMID:21831273

Humidity and illumination organic semiconductor copper phthalocyanine sensor for environmental monitoring.

PubMed

Karimov, K S; Qazi, I; Khan, T A; Draper, P H; Khalid, F A; Mahroof-Tahir, M

2008-06-01

In this investigation properties of organic semiconductor copper phthalocyanine (CuPc) capacitive humidity and illumination sensors were studied. Organic thin film was deposited by vacuum evaporation on a glass substrate with silver surface-type electrodes to form the Ag/CuPc/Ag sensor. The capacitance of the samples was evaluated at room temperature in the relative humidity range of 35-92%. It was observed that capacitance of the Ag/CuPc/Ag sensor increases with increase in humidity. The ratio of the relative capacitance to relative humidity was about 200. It is assumed that in general the capacitive response of the sensor is associated with polarization due to absorption of water molecules and transfer of charges (electrons and holes). It was observed that under filament lamp illumination of up to 1,000 lx the capacitance of the Ag/CuPc/Ag photo capacitive detectors increased continuously by 20% as compared to dark condition. It is assumed that photo capacitive response of the sensor is associated with polarization due to transfer of photo-generated electrons and holes. An equivalent circuit of the Ag/CuPc/Ag capacitive humidity and illumination sensor was developed. Humidity and illumination dependent capacitance properties of this sensor make it attractive for use in humidity and illumination multi-meters. The sensor may be used in instruments for environmental monitoring of humidity and illumination.

Transparent, flexible, and stretchable WS2 based humidity sensors for electronic skin.

PubMed

Guo, Huayang; Lan, Changyong; Zhou, Zhifei; Sun, Peihua; Wei, Dapeng; Li, Chun

2017-05-18

Skin-mountable chemical sensors using flexible chemically sensitive nanomaterials are of great interest for electronic skin (e-skin) application. To build these sensors, the emerging atomically thin two-dimensional (2D) layered semiconductors could be a good material candidate. Herein, we show that a large-area WS 2 film synthesized by sulfurization of a tungsten film exhibits high humidity sensing performance both in natural flat and high mechanical flexible states (bending curvature down to 5 mm). The conductivity of as-synthesized WS 2 increases sensitively over a wide relative humidity range (up to 90%) with fast response and recovery times in a few seconds. By using graphene as electrodes and thin polydimethylsiloxane (PDMS) as substrate, a transparent, flexible, and stretchable humidity sensor was fabricated. This senor can be well laminated onto skin and shows stable water moisture sensing behaviors in the undeformed relaxed state as well as under compressive and tensile loadings. Furthermore, its high sensing performance enables real-time monitoring of human breath, indicating a potential mask-free breath monitoring for healthcare application. We believe that such a skin-activity compatible WS 2 humidity sensor may shed light on developing low power consumption wearable chemical sensors based on 2D semiconductors.

Two-Axis Direct Fluid Shear Stress Sensor for Aerodynamic Applications

NASA Technical Reports Server (NTRS)

Bajikar, Sateesh S.; Scott, Michael A.; Adcock, Edward E.

2011-01-01

This miniature or micro-sized semiconductor sensor design provides direct, nonintrusive measurement of skin friction or wall shear stress in fluid flow situations in a two-axis configuration. The sensor is fabricated by microelectromechanical system (MEMS) technology, enabling small size and multiple, low-cost reproductions. The sensors may be fabricated by bonding a sensing element wafer to a fluid-coupling element wafer. Using this layered machine structure provides a truly three-dimensional device.

Interface and gate bias dependence responses of sensing organic thin-film transistors.

PubMed

Tanese, Maria Cristina; Fine, Daniel; Dodabalapur, Ananth; Torsi, Luisa

2005-11-15

The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.

Broadband image sensor array based on graphene-CMOS integration

NASA Astrophysics Data System (ADS)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device

NASA Astrophysics Data System (ADS)

Uryu, Yuko; Asano, Tanemasa

2002-04-01

A new photodetector device composed of a lateral junction photodiode and a metal-oxide-semiconductor field-effect-transistor (MOSFET), in which the output of the diode is fed through the body of the MOSFET, has been investigated. It is shown that the silicon-on-insulator (SOI)-MOSFET amplifies the junction photodiode current due to the lateral bipolar action. It is also shown that the presence of the electrically floating gate enhances the current amplification factor of the SOI-MOSFET. The output current of this composite device linearly responds by four orders of illumination intensity. As an application of the composite device, a complementary-metal-oxide-semiconductor (CMOS) line sensor incorporating the composite device is fabricated and its operation is demonstrated. The output signal of the line sensor using the composite device was two times larger than that using the lateral photodiode.

Methods and apparatuses for detection of radiation with semiconductor image sensors

DOEpatents

Cogliati, Joshua Joseph

2018-04-10

A semiconductor image sensor is repeatedly exposed to high-energy photons while a visible light obstructer is in place to block visible light from impinging on the sensor to generate a set of images from the exposures. A composite image is generated from the set of images with common noise substantially removed so the composite image includes image information corresponding to radiated pixels that absorbed at least some energy from the high-energy photons. The composite image is processed to determine a set of bright points in the composite image, each bright point being above a first threshold. The set of bright points is processed to identify lines with two or more bright points that include pixels therebetween that are above a second threshold and identify a presence of the high-energy particles responsive to a number of lines.

CCD imaging sensors

NASA Technical Reports Server (NTRS)

Janesick, James R. (Inventor); Elliott, Stythe T. (Inventor)

1989-01-01

A method for promoting quantum efficiency (QE) of a CCD imaging sensor for UV, far UV and low energy x-ray wavelengths by overthinning the back side beyond the interface between the substrate and the photosensitive semiconductor material, and flooding the back side with UV prior to using the sensor for imaging. This UV flooding promotes an accumulation layer of positive states in the oxide film over the thinned sensor to greatly increase QE for either frontside or backside illumination. A permanent or semipermanent image (analog information) may be stored in a frontside SiO.sub.2 layer over the photosensitive semiconductor material using implanted ions for a permanent storage and intense photon radiation for a semipermanent storage. To read out this stored information, the gate potential of the CCD is biased more negative than that used for normal imaging, and excess charge current thus produced through the oxide is integrated in the pixel wells for subsequent readout by charge transfer from well to well in the usual manner.

Self-Activated Transparent All-Graphene Gas Sensor with Endurance to Humidity and Mechanical Bending.

PubMed

Kim, Yeon Hoo; Kim, Sang Jin; Kim, Yong-Jin; Shim, Yeong-Seok; Kim, Soo Young; Hong, Byung Hee; Jang, Ho Won

2015-10-27

Graphene is considered as one of leading candidates for gas sensor applications in the Internet of Things owing to its unique properties such as high sensitivity to gas adsorption, transparency, and flexibility. We present self-activated operation of all graphene gas sensors with high transparency and flexibility. The all-graphene gas sensors which consist of graphene for both sensor electrodes and active sensing area exhibit highly sensitive, selective, and reversible responses to NO2 without external heating. The sensors show reliable operation under high humidity conditions and bending strain. In addition to these remarkable device performances, the significantly facile fabrication process enlarges the potential of the all-graphene gas sensors for use in the Internet of Things and wearable electronics.

Microsensors based on GaN semiconductors covalently functionalized with luminescent Ru(II) complexes.

PubMed

López-Gejo, Juan; Arranz, Antonio; Navarro, Alvaro; Palacio, Carlos; Muñoz, Elías; Orellana, Guillermo

2010-02-17

Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as a key step in the development of innovative sensing devices in which the indicator support (semiconductor) plays the role of both support and excitation source. Luminescence emission decays and time-resolved emission spectra confirm the presence of the dye on the semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O(2) sensitivity of the new device is comparable to those of other ruthenium-based sensor systems. This achievement paves the way to a new generation of integrable ultracompact microsensors that combine semiconductor emitter-probe assemblies.

A new portable sulfide monitor with a zinc-oxide semiconductor sensor for daily use and field study.

PubMed

Tanda, Naoko; Washio, Jumpei; Ikawa, Kyoko; Suzuki, Kengo; Koseki, Takeyoshi; Iwakura, Masaki

2007-07-01

For measuring oral malodor in daily clinical practice and in field study, we developed and evaluated a highly sensitive portable monitor system. We examined sensitivity and specificity of the sensor for volatile sulfur compounds (VSC) and obstructive gases, such as ethanol, acetone, and acetaldehyde. Each mouth air provided by 46 people was measured by this monitor, gas chromatography (GC), and olfactory panel and compared with each other. Based on the result, we used the monitor for mass health examination of a rural town with standardized measuring. The sensor detected hydrogen sulfide, methyl mercaptan, and dimethyl sulfide with 10-1000 times higher sensitivity than the other gases. The monitor's specificity was significantly improved by a VSC-selective filter. There were significant correlations between VSC concentration by the sulfide monitor and by GC, and by organoleptic score. Thirty-six percent of 969 examinees had oral malodor in a rural town. Seventy-eight percent of 969 examinees were motivated to take care of their oral condition by oral malodor measuring with the monitor. The portable sulfide monitor was useful to promote oral health care not only in clinics, but also in field study. The simple and quick operation system and the standardized measuring make it one of parameters of oral condition.

Manipulating semiconductor colloidal stability through doping.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

A survey and analysis of experimental hydrogen sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

1992-01-01

In order to ascertain the applicability of hydrogen sensors to aerospace applications, a survey was conducted of promising experimental point-contact hydrogen sensors and their operation was analyzed. The techniques discussed are metal-oxide-semiconductor or MOS based sensors, catalytic resistor sensors, acoustic wave detectors, and pyroelectric detectors. All of these sensors depend on the interaction of hydrogen with Pd or a Pd-alloy. It is concluded that no single technique will meet the needs of aerospace applications but a combination of approaches is necessary. The most promising combination is an MOS based sensor with a catalytic resistor.

Indoor air quality inspection and analysis system based on gas sensor array

NASA Astrophysics Data System (ADS)

Gao, Xiang; Wang, Mingjiang; Fan, Binwen

2017-08-01

A detection and analysis system capable of measuring the concentration of four major gases in indoor air is designed. It uses four gas sensors constitute a gas sensor array, to achieve four indoor gas concentration detection, while the detection of data for further processing to reduce the cross-sensitivity between the gas sensor to improve the accuracy of detection.

In situ measurement of gas composition changes in radio frequency plasmas using a quartz sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Atsushi; Nonaka, Hidehiko

2009-09-15

A simple method using a quartz sensor (Q-sensor) was developed to observe gas composition changes in radio frequency (rf) plasmas. The output depends on the gases' absolute pressure, molecular weight, and viscosity. The pressure-normalized quartz sensor output depends only on the molecular weight and viscosity of the gas. Consequently, gas composition changes can be detected in the plasmas if a sensor can be used in the plasmas. Influences imparted by the plasmas on the sensor, such as those by reactive particles (e.g., radicals and ions), excited species, electrons, temperature, and electric potentials during measurements were investigated to test the applicabilitymore » of this quartz sensor measurement to plasma. The Q-sensor measurement results for rf plasmas with argon, hydrogen, and their mixtures are reproducible, demonstrating that the Q-sensor measurement is applicable for plasmas. In this work, pressure- and temperature-normalized Q-sensor output (NQO) were used to obtain the gas composition information of plasma. Temperature-normalization of the Q-sensor output enabled quartz sensor measurements near plasma electrodes, where the quartz sensor temperature increases. The changes in NQO agreed with results obtained by gas analysis using a quadrupole mass spectrometer. Results confirmed that the change in NQO is mainly attributable to changes in the densities and kinds of gas molecules in the plasma gas phase, not by other extrinsic influences of plasma. For argon, hydrogen, and argon-hydrogen plasmas, these changes correspond to reduction in nitrogen, production of carbon monoxide, and dissociation of hydrogen molecules, respectively. These changes in NQO qualitatively and somewhat quantitatively agreed with results obtained using gas analysis, indicting that the measurement has a potential application to obtain the gas composition in plasmas without disturbing industrial plasma processes.« less

Enhanced spectroscopic gas sensors using in-situ grown carbon nanotubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Luca, A.; Cole, M. T.; Milne, W. I.

2015-05-11

In this letter, we present a fully complementary-metal-oxide-semiconductor (CMOS) compatible microelectromechanical system thermopile infrared (IR) detector employing vertically aligned multi-walled carbon nanotubes (CNT) as an advanced nano-engineered radiation absorbing material. The detector was fabricated using a commercial silicon-on-insulator (SOI) process with tungsten metallization, comprising a silicon thermopile and a tungsten resistive micro-heater, both embedded within a dielectric membrane formed by a deep-reactive ion etch following CMOS processing. In-situ CNT growth on the device was achieved by direct thermal chemical vapour deposition using the integrated micro-heater as a micro-reactor. The growth of the CNT absorption layer was verified through scanning electronmore » microscopy, transmission electron microscopy, and Raman spectroscopy. The functional effects of the nanostructured ad-layer were assessed by comparing CNT-coated thermopiles to uncoated thermopiles. Fourier transform IR spectroscopy showed that the radiation absorbing properties of the CNT adlayer significantly enhanced the absorptivity, compared with the uncoated thermopile, across the IR spectrum (3 μm–15.5 μm). This led to a four-fold amplification of the detected infrared signal (4.26 μm) in a CO{sub 2} non-dispersive-IR gas sensor system. The presence of the CNT layer was shown not to degrade the robustness of the uncoated devices, whilst the 50% modulation depth of the detector was only marginally reduced by 1.5 Hz. Moreover, we find that the 50% normalized absorption angular profile is subsequently more collimated by 8°. Our results demonstrate the viability of a CNT-based SOI CMOS IR sensor for low cost air quality monitoring.« less

21 CFR 870.4410 - Cardiopulmonary bypass in-line blood gas sensor.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Cardiopulmonary bypass in-line blood gas sensor... Cardiopulmonary bypass in-line blood gas sensor. (a) Identification. A cardiopulmonary bypass in-line blood gas sensor is a transducer that measures the level of gases in the blood. (b) Classification. Class II...

21 CFR 870.4410 - Cardiopulmonary bypass in-line blood gas sensor.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Cardiopulmonary bypass in-line blood gas sensor... Cardiopulmonary bypass in-line blood gas sensor. (a) Identification. A cardiopulmonary bypass in-line blood gas sensor is a transducer that measures the level of gases in the blood. (b) Classification. Class II...

21 CFR 870.4410 - Cardiopulmonary bypass in-line blood gas sensor.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Cardiopulmonary bypass in-line blood gas sensor... Cardiopulmonary bypass in-line blood gas sensor. (a) Identification. A cardiopulmonary bypass in-line blood gas sensor is a transducer that measures the level of gases in the blood. (b) Classification. Class II...

21 CFR 870.4410 - Cardiopulmonary bypass in-line blood gas sensor.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Cardiopulmonary bypass in-line blood gas sensor... Cardiopulmonary bypass in-line blood gas sensor. (a) Identification. A cardiopulmonary bypass in-line blood gas sensor is a transducer that measures the level of gases in the blood. (b) Classification. Class II...

21 CFR 870.4410 - Cardiopulmonary bypass in-line blood gas sensor.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Cardiopulmonary bypass in-line blood gas sensor... Cardiopulmonary bypass in-line blood gas sensor. (a) Identification. A cardiopulmonary bypass in-line blood gas sensor is a transducer that measures the level of gases in the blood. (b) Classification. Class II...

Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

PubMed

Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

2016-08-10

We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics.

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin`ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Atsushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

2014-11-01

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60-600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm×12 cm×12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0-2.0 keV (FWHM) at 60 keV and 1.6-2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.

Using Bayesian Inference Framework towards Identifying Gas Species and Concentration from High Temperature Resistive Sensor Array Data

DOE PAGES

Liu, Yixin; Zhou, Kai; Lei, Yu

2015-01-01

High temperature gas sensors have been highly demanded for combustion process optimization and toxic emissions control, which usually suffer from poor selectivity. In order to solve this selectivity issue and identify unknown reducing gas species (CO, CH 4 , and CH 8 ) and concentrations, a high temperature resistive sensor array data set was built in this study based on 5 reported sensors. As each sensor showed specific responses towards different types of reducing gas with certain concentrations, based on which calibration curves were fitted, providing benchmark sensor array response database, then Bayesian inference framework was utilized to process themore » sensor array data and build a sample selection program to simultaneously identify gas species and concentration, by formulating proper likelihood between input measured sensor array response pattern of an unknown gas and each sampled sensor array response pattern in benchmark database. This algorithm shows good robustness which can accurately identify gas species and predict gas concentration with a small error of less than 10% based on limited amount of experiment data. These features indicate that Bayesian probabilistic approach is a simple and efficient way to process sensor array data, which can significantly reduce the required computational overhead and training data.« less

Electrothermal energy conversion using electron gas volumetric change inside semiconductors

NASA Astrophysics Data System (ADS)

Yazawa, K.; Shakouri, A.

2016-07-01

We propose and analyze an electrothermal energy converter using volumetric changes in non-equilibrium electron gas inside semiconductors. The geometric concentration of electron gas under an electric field increases the effective pressure of the electrons, and then a barrier filters out cold electrons, acting like a valve. Nano- and micro-scale features enable hot electrons to arrive at the contact in a short enough time to avoid thermalization with the lattice. Key length and time scales, preliminary device geometry, and anticipated efficiency are estimated for electronic analogs of Otto and Brayton power generators and Joule-Thomson micro refrigerators on a chip. The power generators convert the energy of incident photons from the heat source to electrical current, and the refrigerator can reduce the temperature of electrons in a semiconductor device. The analytic calculations show that a large energy conversion efficiency or coefficient of performance may be possible.

Electrothermal energy conversion using electron gas volumetric change inside semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yazawa, K.; Shakouri, A.

2016-07-25

We propose and analyze an electrothermal energy converter using volumetric changes in non-equilibrium electron gas inside semiconductors. The geometric concentration of electron gas under an electric field increases the effective pressure of the electrons, and then a barrier filters out cold electrons, acting like a valve. Nano- and micro-scale features enable hot electrons to arrive at the contact in a short enough time to avoid thermalization with the lattice. Key length and time scales, preliminary device geometry, and anticipated efficiency are estimated for electronic analogs of Otto and Brayton power generators and Joule-Thomson micro refrigerators on a chip. The powermore » generators convert the energy of incident photons from the heat source to electrical current, and the refrigerator can reduce the temperature of electrons in a semiconductor device. The analytic calculations show that a large energy conversion efficiency or coefficient of performance may be possible.« less

Method of plasma etching Ga-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2012-12-25

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Differentiation of cumin seeds using a metal-oxide based gas sensor array in tandem with chemometric tools.

PubMed

Ghasemi-Varnamkhasti, Mahdi; Amiri, Zahra Safari; Tohidi, Mojtaba; Dowlati, Majid; Mohtasebi, Seyed Saeid; Silva, Adenilton C; Fernandes, David D S; Araujo, Mário C U

2018-01-01

Cumin is a plant of the Apiaceae family (umbelliferae) which has been used since ancient times as a medicinal plant and as a spice. The difference in the percentage of aromatic compounds in cumin obtained from different locations has led to differentiation of some species of cumin from other species. The quality and price of cumin vary according to the specie and may be an incentive for the adulteration of high value samples with low quality cultivars. An electronic nose simulates the human olfactory sense by using an array of sensors to distinguish complex smells. This makes it an alternative for the identification and classification of cumin species. The data, however, may have a complex structure, difficult to interpret. Given this, chemometric tools can be used to manipulate data with two-dimensional structure (sensor responses in time) obtained by using electronic nose sensors. In this study, an electronic nose based on eight metal oxide semiconductor sensors (MOS) and 2D-LDA (two-dimensional linear discriminant analysis), U-PLS-DA (Partial least square discriminant analysis applied to the unfolded data) and PARAFAC-LDA (Parallel factor analysis with linear discriminant analysis) algorithms were used in order to identify and classify different varieties of both cultivated and wild black caraway and cumin. The proposed methodology presented a correct classification rate of 87.1% for PARAFAC-LDA and 100% for 2D-LDA and U-PLS-DA, indicating a promising strategy for the classification different varieties of cumin, caraway and other seeds. Copyright © 2017 Elsevier B.V. All rights reserved.

CMOS Active Pixel Sensors for Low Power, Highly Miniaturized Imaging Systems

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1996-01-01

The complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology has been developed over the past three years by NASA at the Jet Propulsion Laboratory, and has reached a level of performance comparable to CCDs with greatly increased functionality but at a very reduced power level.

Characterizing Semiconductor Alloys for Infrared Sensors

NASA Technical Reports Server (NTRS)

Lehoczky, B. S. L.; Szofran, F. R.; Martin, B. G.

1986-01-01

Report presents results of continuing program aimed at characterizing mercury/cadmium/tellurium alloys and eventually developing improved methods of preparing alloys for use as infrared sensors. Work covered by report includes series of differential thermal analysis (DTA) measurements of alloy compositions with x varied from 9 to 1 in 0.1 increments.

Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D. (Inventor); Bandara, Sumith V. (Inventor); Liu, John K. (Inventor)

2006-01-01

Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.

Fiber-optic temperature sensor using a spectrum-modulating semiconductor etalon

NASA Technical Reports Server (NTRS)

Beheim, Glenn; Anthan, Donald J.; Beheim, Glenn; Anthan, Donald J.

1987-01-01

Described is a fiber-optic temperature sensor that uses a spectrum modulating SiC etalon. The spectral output of this type of sensor may be analyzed to obtain a temperature measurement which is largely independent of the transmission properties of the sensor's fiber-optic link. A highly precise laboratory spectrometer is described in detail, and this instrument is used to study the properties of this type of sensor. Also described are a number of different spectrum analyzers that are more suitable for use in a practical thermometer.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications.

PubMed

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-12-29

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors' architecture on the basis of the type of electric measurement or imaging functionalities.

Piezotronic Effect: An Emerging Mechanism for Sensing Applications

PubMed Central

Jenkins, Kory; Nguyen, Vu; Zhu, Ren; Yang, Rusen

2015-01-01

Strain-induced polarization charges in a piezoelectric semiconductor effectively modulate the band structure near the interface and charge carrier transport. Fundamental investigation of the piezotronic effect has attracted broad interest, and various sensing applications have been demonstrated. This brief review discusses the fundamentals of the piezotronic effect, followed by a review highlighting important applications for strain sensors, pressure sensors, chemical sensors, photodetectors, humidity sensors and temperature sensors. Finally, the review offers some perspectives and outlook for this new field of multi-functional sensing enabled by the piezotronic effect. PMID:26378536

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2007-01-01

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

A Gas Chromatographic System for the Detection of Ethylene Gas Using Ambient Air as a Carrier Gas.

PubMed

Zaidi, Nayyer Abbas; Tahir, Muhammad Waseem; Vellekoop, Michael J; Lang, Walter

2017-10-07

Ethylene gas is a naturally occurring gas that has an influence on the shelf life of fruit during their transportation in cargo ships. An unintentional exposure of ethylene gas during transportation results in a loss of fruit. A gas chromatographic system is presented here for the detection of ethylene gas. The gas chromatographic system was assembled using a preconcentrator, a printed 3D printed gas chromatographic column, a humidity sensor, solenoid valves, and an electrochemical ethylene gas sensor. Ambient air was used as a carrier gas in the gas chromatographic system. The flow rate was fixed to 10 sccm. It was generated through a mini-pump connected in series with a mass flow controller. The metal oxide gas sensor is discussed with its limitation in ambient air. The results show the chromatogram obtained from metal oxide gas sensor has low stability, drifts, and has uncertain peaks, while the chromatogram from the electrochemical sensor is stable and precise. Furthermore, ethylene gas measurements at higher ppb concentration and at lower ppb concentration were demonstrated with the electrochemical ethylene gas sensor. The system separates ethylene gas and humidity. The chromatograms obtained from the system are stable, and the results are 1.2% repeatable in five similar measurements. The statistical calculation of the gas chromatographic system shows that a concentration of 2.3 ppb of ethylene gas can be detected through this system.

Test Structures for Rapid Prototyping of Gas and Pressure Sensors

NASA Technical Reports Server (NTRS)

Buehler, M.; Cheng, L. J.; Martin, D.

1996-01-01

A multi-project ceramic substrate was used in developing a gas sensor and pressure sensor. The ceramic substrate cantained 36 chips with six variants including sensors, process control monitors, and an interconnect ship. Tha gas sensor is being developed as an air quality monitor and the pressure gauge as a barometer.

Continued Development of Compact Multi-Gas Monitor for Life Support Systems Control in Space

NASA Technical Reports Server (NTRS)

Delgado-Alonso, Jesus; Phillips, Straun; Berry, David; DiCarmine, Paul; Chullen, Cinda; Quinn, Gregory

2016-01-01

Miniature optical gas sensors based on luminescent materials have shown great potential as alternatives to NIR-based gas sensor systems for the Portable Life Support System (PLSS). The unique capability of luminescent sensors for carbon dioxide and oxygen monitoring under wet conditions has been reported, as has the fast recovery of humidity sensors after long periods of being wet. Lower volume and power requirements are also potential advantages over both traditional and advanced non-dispersive infrared (NDIR) gas sensors, which have so far shown longer life than luminescent sensors. In this paper we present the most recent results in the development and analytical validation of a compact multi-gas sensor unit based on luminescent sensors for the PLSS. Results of extensive testing are presented, including studies conducted in Intelligent Optical Systems laboratories, a United Technologies Corporation Aerospace Systems (UTC) laboratory, and a Johnson Space Center laboratory. The potential of this sensor technology for gas monitoring in PLSSs and other life support systems, and the advantages and limitations found through detailed sensor validation are discussed.

Method and system for gas flow mitigation of molecular contamination of optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delgado, Gildardo; Johnson, Terry; Arienti, Marco

A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and amore » purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.« less

Flexible Transparent Electronic Gas Sensors.

PubMed

Wang, Ting; Guo, Yunlong; Wan, Pengbo; Zhang, Han; Chen, Xiaodong; Sun, Xiaoming

2016-07-01

Flexible and transparent electronic gas sensors capable of real-time, sensitive, and selective analysis at room-temperature, have gained immense popularity in recent years for their potential to be integrated into various smart wearable electronics and display devices. Here, recent advances in flexible transparent sensors constructed from semiconducting oxides, carbon materials, conducting polymers, and their nanocomposites are presented. The sensing material selection, sensor device construction, and sensing mechanism of flexible transparent sensors are discussed in detail. The critical challenges and future development associated with flexible and transparent electronic gas sensors are presented. Smart wearable gas sensors are believed to have great potential in environmental monitoring and noninvasive health monitoring based on disease biomarkers in exhaled gas. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gas Sensors Based on Semiconducting Metal Oxide One-Dimensional Nanostructures

PubMed Central

Huang, Jin; Wan, Qing

2009-01-01

This article provides a comprehensive review of recent (2008 and 2009) progress in gas sensors based on semiconducting metal oxide one-dimensional (1D) nanostructures. During last few years, gas sensors based on semiconducting oxide 1D nanostructures have been widely investigated. Additionally, modified or doped oxide nanowires/nanobelts have also been synthesized and used for gas sensor applications. Moreover, novel device structures such as electronic noses and low power consumption self-heated gas sensors have been invented and their gas sensing performance has also been evaluated. Finally, we also point out some challenges for future investigation and practical application. PMID:22303154

Ultra-low power operation of self-heated, suspended carbon nanotube gas sensors

NASA Astrophysics Data System (ADS)

Chikkadi, Kiran; Muoth, Matthias; Maiwald, Verena; Roman, Cosmin; Hierold, Christofer

2013-11-01

We present a suspended carbon nanotube gas sensor that senses NO2 at ambient temperature and recovers from gas exposure at an extremely low power of 2.9 μW by exploiting the self-heating effect for accelerated gas desorption. The recovery time of 10 min is two orders of magnitude faster than non-heated recovery at ambient temperature. This overcomes an important bottleneck for the practical application of carbon nanotube gas sensors. Furthermore, the method is easy to implement in sensor systems and requires no additional components, paving the way for ultra-low power, compact, and highly sensitive gas sensors.

Efficient demodulation scheme for rolling-shutter-patterning of CMOS image sensor based visible light communications.

PubMed

Chen, Chia-Wei; Chow, Chi-Wai; Liu, Yang; Yeh, Chien-Hung

2017-10-02

Recently even the low-end mobile-phones are equipped with a high-resolution complementary-metal-oxide-semiconductor (CMOS) image sensor. This motivates using a CMOS image sensor for visible light communication (VLC). Here we propose and demonstrate an efficient demodulation scheme to synchronize and demodulate the rolling shutter pattern in image sensor based VLC. The implementation algorithm is discussed. The bit-error-rate (BER) performance and processing latency are evaluated and compared with other thresholding schemes.

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

PubMed Central

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su

2014-01-01

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778

Microfabricated Chemical Sensors for Safety and Emission Control Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Chen, L.-Y.; Knight, D.; Liu, C. C.; Wu, Q. H.

1998-01-01

Chemical sensor technology is being developed for leak detection, emission monitoring, and fire safety applications. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication (MicroElectroMechanical Systems (MEMS)-based) technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Using these technologies, sensors to measure hydrogen, hydrocarbons, nitrogen oxides, carbon monoxide, oxygen, and carbon dioxide are being developed. A description is given of each sensor type and its present stage of development. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Oxygen sensor for monitoring gas mixtures containing hydrocarbons

DOEpatents

Ruka, Roswell J.; Basel, Richard A.

1996-01-01

A gas sensor measures O.sub.2 content of a reformable monitored gas containing hydrocarbons H.sub.2 O and/or CO.sub.2, preferably in association with an electrochemical power generation system. The gas sensor has a housing communicating with the monitored gas environment and carries the monitored gas through an integral catalytic hydrocarbon reforming chamber containing a reforming catalyst, and over a solid electrolyte electrochemical cell used for sensing purposes. The electrochemical cell includes a solid electrolyte between a sensor electrode that is exposed to the monitored gas, and a reference electrode that is isolated in the housing from the monitored gas and is exposed to a reference gas environment. A heating element is also provided in heat transfer communication with the gas sensor. A circuit that can include controls operable to adjust operations via valves or the like is connected between the sensor electrode and the reference electrode to process the electrical signal developed by the electrochemical cell. The electrical signal varies as a measure of the equilibrium oxygen partial pressure of the monitored gas. Signal noise is effectively reduced by maintaining a constant temperature in the area of the electrochemical cell and providing a monitored gas at chemical equilibria when contacting the electrochemical cell. The output gas from the electrochemical cell of the sensor is fed back into the conduits of the power generating system.

Oxygen sensor for monitoring gas mixtures containing hydrocarbons

DOEpatents

Ruka, R.J.; Basel, R.A.

1996-03-12

A gas sensor measures O{sub 2} content of a reformable monitored gas containing hydrocarbons, H{sub 2}O and/or CO{sub 2}, preferably in association with an electrochemical power generation system. The gas sensor has a housing communicating with the monitored gas environment and carries the monitored gas through an integral catalytic hydrocarbon reforming chamber containing a reforming catalyst, and over a solid electrolyte electrochemical cell used for sensing purposes. The electrochemical cell includes a solid electrolyte between a sensor electrode that is exposed to the monitored gas, and a reference electrode that is isolated in the housing from the monitored gas and is exposed to a reference gas environment. A heating element is also provided in heat transfer communication with the gas sensor. A circuit that can include controls operable to adjust operations via valves or the like is connected between the sensor electrode and the reference electrode to process the electrical signal developed by the electrochemical cell. The electrical signal varies as a measure of the equilibrium oxygen partial pressure of the monitored gas. Signal noise is effectively reduced by maintaining a constant temperature in the area of the electrochemical cell and providing a monitored gas at chemical equilibria when contacting the electrochemical cell. The output gas from the electrochemical cell of the sensor is fed back into the conduits of the power generating system. 4 figs.

Chip-scale sensor system integration for portable health monitoring.

PubMed

Jokerst, Nan M; Brooke, Martin A; Cho, Sang-Yeon; Shang, Allan B

2007-12-01

The revolution in integrated circuits over the past 50 yr has produced inexpensive computing and communications systems that are powerful and portable. The technologies for these integrated chip-scale sensing systems, which will be miniature, lightweight, and portable, are emerging with the integration of sensors with electronics, optical systems, micromachines, microfluidics, and the integration of chemical and biological materials (soft/wet material integration with traditional dry/hard semiconductor materials). Hence, we stand at a threshold for health monitoring technology that promises to provide wearable biochemical sensing systems that are comfortable, inauspicious, wireless, and battery-operated, yet that continuously monitor health status, and can transmit compressed data signals at regular intervals, or alarm conditions immediately. In this paper, we explore recent results in chip-scale sensor integration technology for health monitoring. The development of inexpensive chip-scale biochemical optical sensors, such as microresonators, that are customizable for high sensitivity coupled with rapid prototyping will be discussed. Ground-breaking work in the integration of chip-scale optical systems to support these optical sensors will be highlighted, and the development of inexpensive Si complementary metal-oxide semiconductor circuitry (which makes up the vast majority of computational systems today) for signal processing and wireless communication with local receivers that lie directly on the chip-scale sensor head itself will be examined.

Sol-Gel Thin Films for Plasmonic Gas Sensors

PubMed Central

Della Gaspera, Enrico; Martucci, Alessandro

2015-01-01

Plasmonic gas sensors are optical sensors that use localized surface plasmons or extended surface plasmons as transducing platform. Surface plasmons are very sensitive to dielectric variations of the environment or to electron exchange, and these effects have been exploited for the realization of sensitive gas sensors. In this paper, we review our research work of the last few years on the synthesis and the gas sensing properties of sol-gel based nanomaterials for plasmonic sensors. PMID:26184216

Self-Test Procedures for Gas Sensors Embedded in Microreactor Systems

PubMed Central

Helwig, Andreas; Hackner, Angelika; Zappa, Dario; Sberveglieri, Giorgio

2018-01-01

Metal oxide (MOX) gas sensors sensitively respond to a wide variety of combustible, explosive and poisonous gases. However, due to the lack of a built-in self-test capability, MOX gas sensors have not yet been able to penetrate safety-critical applications. In the present work we report on gas sensing experiments performed on MOX gas sensors embedded in ceramic micro-reaction chambers. With the help of an external micro-pump, such systems can be operated in a periodic manner alternating between flow and no-flow conditions, thus allowing repetitive measurements of the sensor resistances under clean air, R0, and under gas exposure, Rgas, to be obtained, even under field conditions. With these pairs of resistance values, eventual drifts in the sensor baseline resistance can be detected and drift-corrected values of the relative resistance response Resp=(R0−Rgas)/R0 can be determined. Residual poisoning-induced changes in the relative resistance response can be detected by reference to humidity measurements taken with room-temperature-operated capacitive humidity sensors which are insensitive to the poisoning processes operative on heated MOX gas sensors. PMID:29401673

Miniaturized Planar Room Temperature Ionic Liquid Electrochemical Gas Sensor for Rapid Multiple Gas Pollutants Monitoring.

PubMed

Wan, Hao; Yin, Heyu; Lin, Lu; Zeng, Xiangqun; Mason, Andrew J

2018-02-01

The growing impact of airborne pollutants and explosive gases on human health and occupational safety has escalated the demand of sensors to monitor hazardous gases. This paper presents a new miniaturized planar electrochemical gas sensor for rapid measurement of multiple gaseous hazards. The gas sensor features a porous polytetrafluoroethylene substrate that enables fast gas diffusion and room temperature ionic liquid as the electrolyte. Metal sputtering was utilized for platinum electrodes fabrication to enhance adhesion between the electrodes and the substrate. Together with carefully selected electrochemical methods, the miniaturized gas sensor is capable of measuring multiple gases including oxygen, methane, ozone and sulfur dioxide that are important to human health and safety. Compared to its manually-assembled Clark-cell predecessor, this sensor provides better sensitivity, linearity and repeatability, as validated for oxygen monitoring. With solid performance, fast response and miniaturized size, this sensor is promising for deployment in wearable devices for real-time point-of-exposure gas pollutant monitoring.

Acetone Sensing Properties of a Gas Sensor Composed of Carbon Nanotubes Doped With Iron Oxide Nanopowder

PubMed Central

Tan, Qiulin; Fang, Jiahua; Liu, Wenyi; Xiong, Jijun; Zhang, Wendong

2015-01-01

Iron oxide (Fe2O3) nanopowder was prepared by a precipitation method and then mixed with different proportions of carbon nanotubes. The composite materials were characterized by X-ray powder diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. A fabricated heater-type gas sensor was compared with a pure Fe2O3 gas sensor under the influence of acetone. The effects of the amount of doping, the sintering temperature, and the operating temperature on the response of the sensor and the response recovery time were analyzed. Experiments show that doping of carbon nanotubes with iron oxide effectively improves the response of the resulting gas sensors to acetone gas. It also reduces the operating temperature and shortens the response recovery time of the sensor. The response of the sensor in an acetone gas concentration of 80 ppm was enhanced, with good repeatability. PMID:26569253

Acetone Sensing Properties of a Gas Sensor Composed of Carbon Nanotubes Doped With Iron Oxide Nanopowder.

PubMed

Tan, Qiulin; Fang, Jiahua; Liu, Wenyi; Xiong, Jijun; Zhang, Wendong

2015-11-11

Iron oxide (Fe₂O₃) nanopowder was prepared by a precipitation method and then mixed with different proportions of carbon nanotubes. The composite materials were characterized by X-ray powder diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. A fabricated heater-type gas sensor was compared with a pure Fe₂O₃ gas sensor under the influence of acetone. The effects of the amount of doping, the sintering temperature, and the operating temperature on the response of the sensor and the response recovery time were analyzed. Experiments show that doping of carbon nanotubes with iron oxide effectively improves the response of the resulting gas sensors to acetone gas. It also reduces the operating temperature and shortens the response recovery time of the sensor. The response of the sensor in an acetone gas concentration of 80 ppm was enhanced, with good repeatability.

Room temperature CO and H2 sensing with carbon nanoparticles.

PubMed

Kim, Daegyu; Pikhitsa, Peter V; Yang, Hongjoo; Choi, Mansoo

2011-12-02

We report on a shell-shaped carbon nanoparticle (SCNP)-based gas sensor that reversibly detects reducing gas molecules such as CO and H(2) at room temperature both in air and inert atmosphere. Crystalline SCNPs were synthesized by laser-assisted reactions in pure acetylene gas flow, chemically treated to obtain well-dispersed SCNPs and then patterned on a substrate by the ion-induced focusing method. Our chemically functionalized SCNP-based gas sensor works for low concentrations of CO and H(2) at room temperature even without Pd or Pt catalysts commonly used for splitting H(2) molecules into reactive H atoms, while metal oxide gas sensors and bare carbon-nanotube-based gas sensors for sensing CO and H(2) molecules can operate only at elevated temperatures. A pristine SCNP-based gas sensor was also examined to prove the role of functional groups formed on the surface of functionalized SCNPs. A pristine SCNP gas sensor showed no response to reducing gases at room temperature but a significant response at elevated temperature, indicating a different sensing mechanism from a chemically functionalized SCNP sensor.

The Effect of Zeolite Composition and Grain Size on Gas Sensing Properties of SnO₂/Zeolite Sensor.

PubMed

Sun, Yanhui; Wang, Jing; Li, Xiaogan; Du, Haiying; Huang, Qingpan; Wang, Xiaofeng

2018-01-29

In order to improve the sensing properties of tin dioxide gas sensor, four kinds of different SiO₂/Al₂O₃ ratio, different particle size of MFI type zeolites (ZSM-5) were coated on the SnO₂ to prepared zeolite modified gas sensors, and the gas sensing properties were tested. The measurement results showed that the response values of ZSM-5 zeolite (SiO₂/Al₂O₃ = 70, grain size 300 nm) coated SnO₂ gas sensors to formaldehyde vapor were increased, and the response to acetone decreased compared with that of SnO₂ gas sensor, indicating an improved selectivity property. The other three ZSM-5 zeolites with SiO₂/Al₂O₃ 70, 150 and 470, respectively, and grain sizes all around 1 μm coated SnO₂ sensors did not show much difference with SnO₂ sensor for the response properties to both formaldehyde and acetone. The sensing mechanism of ZSM-5 modified sensors was briefly analyzed.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

Label-free detection of biomolecules with Ta2O5-based field effect devices

NASA Astrophysics Data System (ADS)

Branquinho, Rita Maria Mourao Salazar

Field-effect-based devices (FEDs) are becoming a basic structural element in a new generation of micro biosensors. Their numerous advantages such as small size, labelfree response and versatility, together with the possibility of on-chip integration of biosensor arrays with a future prospect of low-cost mass production, make their development highly desirable. The present thesis focuses on the study and optimization of tantalum pentoxide (Ta2O5) deposited by rf magnetron sputtering at room temperature, and their application as sensitive layer in biosensors based on field effect devices (BioFEDs). As such, the influence of several deposition parameters and post-processing annealing temperature and surface plasma treatment on the film¡¦s properties was investigated. Electrolyte-insulator-semiconductor (EIS) field-effect-based sensors comprising the optimized Ta2O5 sensitive layer were applied to the development of BioFEDs. Enzyme functionalized sensors (EnFEDs) were produced for penicillin detection. These sensors were also applied to the label free detection of DNA and the monitoring of its amplification via polymerase chain reaction (PCR), real time PCR (RT-PCR) and loop mediated isothermal amplification (LAMP). Ion sensitive field effect transistors (ISFETs) based on semiconductor oxides comprising the optimized Ta2O5 sensitive layer were also fabricated. EIS sensors comprising Ta2O5 films produced with optimized conditions demonstrated near Nernstian pH sensitivity, 58+/-0.3 mV/pH. These sensors were successfully applied to the label-free detection of penicillin and DNA. Penicillinase functionalized sensors showed a 29+/-7 mV/mM sensitivity towards penicillin detection up to 4 mM penicillin concentration. DNA detection was achieved with 30 mV/mugM sensitivity and DNA amplification monitoring with these sensors showed comparable results to those obtained with standard fluorescence based methods. Semiconductor oxides-based ISFETs with Ta2O5 sensitive layer were also produced. Finally, the high quality and sensitivity demonstrated by Ta2O5 thin films produced at low temperature by rf magnetron sputtering allows for their application as sensitive layer in field effect sensors.

Continued Development of Compact Multi-gas Monitor for Life Support Systems Control in Space

NASA Technical Reports Server (NTRS)

Delgado-Alonso, Jesús; Phillips, Straun; Chullen, Cinda; Quinn, Gregory

2016-01-01

Miniature optic gas sensors (MOGS) based on luminescent materials have shown great potential as alternatives to Near-Infrared-based gas sensor systems for the advanced space suit portable life support system (PLSS). The unique capability of MOGS for carbon dioxide and oxygen monitoring under wet conditions has been reported, as has the fast recovery of MOGS humidity sensors after long periods of being wet. Lower volume and power requirements are also potential advantages of MOGS over both traditional and advanced Non-Dispersive Infrared (NDIR) gas sensors, which have shown so far longer life than luminescent sensors. This paper presents the most recent results in the development and analytical validation of a compact multi-gas sensor unit based on luminescent sensors for the PLSS. Results of extensive testing are presented, including studies conducted at Intelligent Optical Systems laboratories, a United Technology Corporation Aerospace Systems (UTAS) laboratory, and a Johnson Space Center laboratory. The potential of this sensor technology for gas monitoring in PLSSs and other life support systems and the advantages and limitations found through detailed sensor validation are discussed.

Continued Development of Compact Multi-Gas Monitor for Life Support Systems Control in Space

NASA Technical Reports Server (NTRS)

Delgado, Jesus; Phillips, Straun; Chullen, Cinda

2015-01-01

Miniature optic gas sensors (MOGS) based on luminescent materials have shown great potential as alternatives to NIR-based gas sensor systems for the Portable Life Support System (PLSS). The unique capability of MOGS for carbon dioxide and oxygen monitoring under wet conditions has been reported, as has the fast recovery of MOGS humidity sensors after long periods of being wet. Lower volume and power requirements are also potential advantages of MOGS over both traditional and advanced Non-Dispersive Infrared (NDIR) gas sensors, which have shown so far longer life than luminescent sensors. In this paper we present the most recent results in the development and analytical validation of a compact multi-gas sensor unit based on luminescent sensors for the PLSS. Results of extensive testing are presented, including studies conducted at Intelligent Optical Systems laboratories, a United Technology Corporation Aerospace Systems (UTAS) laboratory, and a Johnson Space Center laboratory. The potential of this sensor technology for gas monitoring in PLSSs and other life support systems and the advantages and limitations found through detailed sensor validation are discussed.

Membrane-Based Characterization of a Gas Component — A Transient Sensor Theory

PubMed Central

Lazik, Detlef

2014-01-01

Based on a multi-gas solution-diffusion problem for a dense symmetrical membrane this paper presents a transient theory of a planar, membrane-based sensor cell for measuring gas from both initial conditions: dynamic and thermodynamic equilibrium. Using this theory, the ranges for which previously developed, simpler approaches are valid will be discussed; these approaches are of vital interest for membrane-based gas sensor applications. Finally, a new theoretical approach is introduced to identify varying gas components by arranging sensor cell pairs resulting in a concentration independent gas-specific critical time. Literature data for the N2, O2, Ar, CH4, CO2, H2 and C4H10 diffusion coefficients and solubilities for a polydimethylsiloxane membrane were used to simulate gas specific sensor responses. The results demonstrate the influence of (i) the operational mode; (ii) sensor geometry and (iii) gas matrices (air, Ar) on that critical time. Based on the developed theory the case-specific suitable membrane materials can be determined and both operation and design options for these sensors can be optimized for individual applications. The results of mixing experiments for different gases (O2, CO2) in a gas matrix of air confirmed the theoretical predictions. PMID:24608004

Sensing mechanism of SnO2/ZnO nanofibers for CH3OH sensors: heterojunction effects

NASA Astrophysics Data System (ADS)

Tang, Wei

2017-11-01

SnO2/ZnO composite nanofibers were synthesized by a simple electrospinning method. The prepared SnO2/ZnO gas sensors exhibited good linear and high response to methanol. The enhanced sensing behavior of SnO2/ZnO might be associated with the homotypic heterojunction effects formed in n-SnO2/n-ZnO nanograins boundaries. In addition, the possible sensing mechanisms of methanol on SnO2/ZnO surface were investigated by density functional theory in order to make the methanol adsorption and desorption process clear. Zn doped SnO2 model was adopted to approximate the SnO2/ZnO structure because of the calculation power limitations. Calculation results showed that when exposed to methanol, the methanol would react with bridge oxygen O2c , planar O3c and pre adsorbed oxygen vacancy on the lattice surface. The -CH3 and -OH of methanol molecule would both lose one H atom. The lost H atoms bonded with oxygen at the adsorption sites. The final products were HCHO and H2O. Electrons were transferred from methanol to the lattice surface to reduce the resistance of semiconductor gas sensitive materials, which is in agreement with the experimental phenomena. More adsorption models of other interfering gases, such as ethanol, formaldehyde and acetone will be built and calculated to explain the selectivity issue from the perspective of adsorption energy, transferred charge and density of states in the future work.

Design of flexible PANI-coated CuO-TiO2-SiO2 heterostructure nanofibers with high ammonia sensing response values

NASA Astrophysics Data System (ADS)

Pang, Zengyuan; Nie, Qingxin; Lv, Pengfei; Yu, Jian; Huang, Fenglin; Wei, Qufu

2017-06-01

We report a room-temperature ammonia sensor with extra high response values and ideal flexibility, including polyaniline (PANI)-coated titanium dioxide-silicon dioxide (TiO2-SiO2) or copper oxide-titanium dioxide-silicon dioxide (CuO-TiO2-SiO2) composite nanofibers. Such flexible inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers were prepared by electrospinning, followed by calcination. Then, in situ polymerization of aniline monomers was carried out with inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers as templates. Gas sensing tests at room temperature indicated that the obtained CuO-TiO2-SiO2/PANI composite nanofibers had much higher response values to ammonia gas (ca. 45.67-100 ppm) than most of those reported before as well as the prepared TiO2-SiO2/PANI composite nanofibers here. These excellent sensing properties may be due to the P-N, P-P heterojunctions and a structure similar to field-effect transistors formed on the interfaces between PANI, TiO2, and CuO, which is p-type, n-type, and p-type semiconductor, respectively. In addition, the prepared free-standing CuO-TiO2-SiO2/PANI composite nanofiber membrane was easy to handle and possessed ideal flexibility, which is promising for potential applications in wearable sensors in the future.

Design of flexible PANI-coated CuO-TiO2-SiO2 heterostructure nanofibers with high ammonia sensing response values.

PubMed

Pang, Zengyuan; Nie, Qingxin; Lv, Pengfei; Yu, Jian; Huang, Fenglin; Wei, Qufu

2017-06-02

We report a room-temperature ammonia sensor with extra high response values and ideal flexibility, including polyaniline (PANI)-coated titanium dioxide-silicon dioxide (TiO 2 -SiO 2 ) or copper oxide-titanium dioxide-silicon dioxide (CuO-TiO 2 -SiO 2 ) composite nanofibers. Such flexible inorganic TiO 2 -SiO 2 and CuO-TiO 2 -SiO 2 composite nanofibers were prepared by electrospinning, followed by calcination. Then, in situ polymerization of aniline monomers was carried out with inorganic TiO 2 -SiO 2 and CuO-TiO 2 -SiO 2 composite nanofibers as templates. Gas sensing tests at room temperature indicated that the obtained CuO-TiO 2 -SiO 2 /PANI composite nanofibers had much higher response values to ammonia gas (ca. 45.67-100 ppm) than most of those reported before as well as the prepared TiO 2 -SiO 2 /PANI composite nanofibers here. These excellent sensing properties may be due to the P-N, P-P heterojunctions and a structure similar to field-effect transistors formed on the interfaces between PANI, TiO 2 , and CuO, which is p-type, n-type, and p-type semiconductor, respectively. In addition, the prepared free-standing CuO-TiO 2 -SiO 2 /PANI composite nanofiber membrane was easy to handle and possessed ideal flexibility, which is promising for potential applications in wearable sensors in the future.

A Gas Chromatographic System for the Detection of Ethylene Gas Using Ambient Air as a Carrier Gas

PubMed Central

Zaidi, Nayyer Abbas; Tahir, Muhammad Waseem; Vellekoop, Michael J.; Lang, Walter

2017-01-01

Ethylene gas is a naturally occurring gas that has an influence on the shelf life of fruit during their transportation in cargo ships. An unintentional exposure of ethylene gas during transportation results in a loss of fruit. A gas chromatographic system is presented here for the detection of ethylene gas. The gas chromatographic system was assembled using a preconcentrator, a printed 3D printed gas chromatographic column, a humidity sensor, solenoid valves, and an electrochemical ethylene gas sensor. Ambient air was used as a carrier gas in the gas chromatographic system. The flow rate was fixed to 10 sccm. It was generated through a mini-pump connected in series with a mass flow controller. The metal oxide gas sensor is discussed with its limitation in ambient air. The results show the chromatogram obtained from metal oxide gas sensor has low stability, drifts, and has uncertain peaks, while the chromatogram from the electrochemical sensor is stable and precise. Furthermore, ethylene gas measurements at higher ppb concentration and at lower ppb concentration were demonstrated with the electrochemical ethylene gas sensor. The system separates ethylene gas and humidity. The chromatograms obtained from the system are stable, and the results are 1.2% repeatable in five similar measurements. The statistical calculation of the gas chromatographic system shows that a concentration of 2.3 ppb of ethylene gas can be detected through this system. PMID:28991173

On the dependence of structural and ammonia gas sensing properties of ZnO thin films on Mg doping

NASA Astrophysics Data System (ADS)

Goudarzi, Saeideh; Khojier, Kaykhosrow

2018-01-01

Ammonia is one of the most hazardous substances and it is extremely toxic if inhaled above the moderate level. Therefore, the detection of the ammonia at low concentration levels and at room temperature is one of the most challenging tasks. Among different methods to this goal, metal oxide semiconductors (MOSs) based vapor or gas sensors are mostly preferred because of their fast and high response, and cost effectiveness. This research reports the effect of Mg doping on structural and ammonia gas sensing properties of zinc oxide thin films. The spray pyrolysis technique was employed to deposit undoped and Mg-doped ZnO thin films on glass substrates. Doping concentration was varied from 0.003 to 0.009 M in steps of 0.002 M. The crystalline structure of the samples was confirmed by X-ray diffraction (XRD) analysis while a field emission scanning electron microscope (FESEM) was used to study the surface physical morphology of the samples. The sensitivity of the samples was investigated to ammonia gas with different concentrations in the range of 10 to 100 ppm at room temperature. The results reveal that the best sensitivity is attributed to the sample doped with 0.005 M Mg while an increase in Mg concentration results in a reduction in the sensitivity of the samples.

MIS-based sensors with hydrogen selectivity

DOEpatents

Li,; Dongmei, [Boulder, CO; Medlin, J William [Boulder, CO; McDaniel, Anthony H [Livermore, CA; Bastasz, Robert J [Livermore, CA

2008-03-11

The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.

JPL CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

PubMed

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-05-02

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors

PubMed Central

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-01-01

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components. PMID:28468324

Molecular hydrogen consumption in the human body during the inhalation of hydrogen gas.

PubMed

Shimouchi, Akito; Nose, Kazutoshi; Mizukami, Tomoe; Che, Dock-Chil; Shirai, Mikiyasu

2013-01-01

Inhaling or ingesting hydrogen (H2) gas improves oxidative stress-induced damage in animal models and humans. We previously reported that H2 was consumed throughout the human body after the ingestion of H2-rich water and that the H2 consumption rate ([Formula: see text]) was 1.0 μmol/min/m(2) body surface area. To confirm this result, we evaluated [Formula: see text]during the inhalation of low levels of H2 gas. After measuring the baseline levels of exhaled H2 during room air breathing via a one-way valve and a mouthpiece, the subject breathed low levels (160 ppm) of H2 gas mixed with purified artificial air. The H2 levels of their inspired and expired breath were measured by gas chromatography using a semiconductor sensor. [Formula: see text] was calculated using a ventilation equation derived from the inspired and expired concentrations of O2/CO2/H2, and the expired minute ventilation volume, which was measured with a respiromonitor. As a result, [Formula: see text] was found to be approximately 0.7 μmol/min/m(2)BSA, which was compatible with the findings we obtained using H2-rich water. [Formula: see text] varied markedly when pretreatment fasting to reduce colonic fermentation was not employed, i.e., when the subject's baseline breath hydrogen level was 10 ppm or greater. Our H2 inhalation method might be useful for the noninvasive monitoring of hydroxyl radical production in the human body.

A low-temperature ZnO nanowire ethanol gas sensor prepared on plastic substrate

NASA Astrophysics Data System (ADS)

Lin, Chih-Hung; Chang, Shoou-Jinn; Hsueh, Ting-Jen

2016-09-01

In this work, a low-temperature ZnO nanowire ethanol gas sensor was prepared on plastic substrate. The operating temperature of the ZnO nanowire ethanol gas sensor was reduced to room temperature using ultraviolet illumination. The experimental results indicate a favorable sensor response at low temperature, with the best response at 60 °C. The results also reveal that the ZnO nanowire ethanol gas sensor can be easily integrated into portable products, whose waste heat can improve sensor response and achieve energy savings, while energy consumption can be further reduced by solar irradiation.

MEASUREMENT AND ANALYSIS OF ADSISTOR AND FIGARO GAS SENSORS USED FOR UNDERGROUND STORAGE TANK LEAK DETECTION

EPA Science Inventory

Two different sensor technologies and their properties were analyzed. he nalysis simulated a leak which occurs from an underground storage tank. igaro gas sensors and the Adsistor gas sensor were tested in simulated underground storage tank nvironments using the Carnegie Mellon R...

The Design of The Monitoring Tools Of Clean Air Condition And Dangerous Gas CO, CO2 CH4 In Chemical Laboratory By Using Fuzzy Logic Based On Microcontroller

NASA Astrophysics Data System (ADS)

Widodo, Slamet; Miftakul, Amin M.; Sutrisman, Adi

2018-02-01

There are many phenomena that human are exposed to toxins from certain types such as of CO2, CO2 and CH4 gases. The device used to detect large amounts of CO, CO2, and CH4 gas in air in enclosed spaces using MQ 135 gas sensors of different types based on the three sensitivity of the Gas. The results of testing the use of sensors MQ 135 on the gas content of CO, CO2 and CH4 received by the sensor is still in the form of ppm based on the maximum ppm detection range of each sensor. Active sensor detects CO 120 ppm gas, CO2 1600 ppm and CH4 1ppm "standby 1" air condition with intermediate rotary fan. Active sensor detects CO 30 ppm gas, CO2 490 ppm and CH4 7 ppm "Standby 2" with low rotating fan output. Fuzzy rulebase logic for motor speed when gas detection sensor CO, CO2, and CH4 output controls the motion speed of the fan blower. Active sensors detect CO 15 ppm, CO2 320 ppm and CH4 45 ppm "Danger" air condition with high fan spin fan. At the gas level of CO 15 ppm, CO2 390 ppm and CH4 3 ppm detect "normal" AC sensor with fan output stop spinning.

Nanoscale Metal Oxide Semiconductors for Gas Sensing

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Evans, Laura; Xu, Jennifer C.; VanderWal, Randy L.; Berger, Gordon M.; Kulis, Michael J.

2011-01-01

A report describes the fabrication and testing of nanoscale metal oxide semiconductors (MOSs) for gas and chemical sensing. This document examines the relationship between processing approaches and resulting sensor behavior. This is a core question related to a range of applications of nanotechnology and a number of different synthesis methods are discussed: thermal evaporation- condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed, providing a processing overview to developers of nanotechnology- based systems. The results of a significant amount of testing and comparison are also described. A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. The TECsynthesized single-crystal nanowires offer uniform crystal surfaces, resistance to sintering, and their synthesis may be done apart from the substrate. The TECproduced nanowire response is very low, even at the operating temperature of 200 C. In contrast, the electrospun polycrystalline nanofiber response is high, suggesting that junction potentials are superior to a continuous surface depletion layer as a transduction mechanism for chemisorption. Using a catalyst deposited upon the surface in the form of nanoparticles yields dramatic gains in sensitivity for both nanostructured, one-dimensional forms. For the nanowire materials, the response magnitude and response rate uniformly increase with increasing operating temperature. Such changes are interpreted in terms of accelerated surface diffusional processes, yielding greater access to chemisorbed oxygen species and faster dissociative chemisorption, respectively. Regardless of operating temperature, sensitivity of the nanofibers is a factor of 10 to 100 greater than that of nanowires with the same catalyst for the same test condition. In summary, nanostructure appears critical to governing the reactivity, as measured by electrical resistance of these SnO2 nanomaterials towards reducing gases. With regard to the sensitivity of the different nascent nanostructures, the electrospun nanofibers appear preferable

Digital Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors.

PubMed

Tremblay, Noah J; Jung, Byung Jun; Breysse, Patrick; Katz, Howard E

2011-11-22

Chemiresistors and sensitive OFETs have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Here we report higher order logic circuits utilizing OFETs sensitive to amine vapors. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including an unprecedented analyte-induced current increase by the n-channel semiconductor. This represents the first step towards 'intelligent sensors' that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

Extraction and evaluation of gas-flow-dependent features from dynamic measurements of gas sensors array

NASA Astrophysics Data System (ADS)

Kalinowski, Paweł; Woźniak, Łukasz; Jasiński, Grzegorz; Jasiński, Piotr

2016-11-01

Gas analyzers based on gas sensors are the devices which enable recognition of various kinds of volatile compounds. They have continuously been developed and investigated for over three decades, however there are still limitations which slow down the implementation of those devices in many applications. For example, the main drawbacks are the lack of selectivity, sensitivity and long term stability of those devices caused by the drift of utilized sensors. This implies the necessity of investigations not only in the field of development of gas sensors construction, but also the development of measurement procedures or methods of analysis of sensor responses which compensate the limitations of sensors devices. One of the fields of investigations covers the dynamic measurements of sensors or sensor-arrays response with the utilization of flow modulation techniques. Different gas delivery patterns enable the possibility of extraction of unique features which improves the stability and selectivity of gas detecting systems. In this article three utilized flow modulation techniques are presented, together with the proposition of the evaluation method of their usefulness and robustness in environmental pollutants detecting systems. The results of dynamic measurements of an commercially available TGS sensor array in the presence of nitrogen dioxide and ammonia are shown.

Self-Test Procedures for Gas Sensors Embedded in Microreactor Systems.

PubMed

Helwig, Andreas; Hackner, Angelika; Müller, Gerhard; Zappa, Dario; Sberveglieri, Giorgio

2018-02-03

Metal oxide (MOX) gas sensors sensitively respond to a wide variety of combustible, explosive and poisonous gases. However, due to the lack of a built-in self-test capability, MOX gas sensors have not yet been able to penetrate safety-critical applications. In the present work we report on gas sensing experiments performed on MOX gas sensors embedded in ceramic micro-reaction chambers. With the help of an external micro-pump, such systems can be operated in a periodic manner alternating between flow and no-flow conditions, thus allowing repetitive measurements of the sensor resistances under clean air, R 0 , and under gas exposure, R g a s , to be obtained, even under field conditions. With these pairs of resistance values, eventual drifts in the sensor baseline resistance can be detected and drift-corrected values of the relative resistance response R e s p = ( R 0 - R g a s ) / R 0 can be determined. Residual poisoning-induced changes in the relative resistance response can be detected by reference to humidity measurements taken with room-temperature-operated capacitive humidity sensors which are insensitive to the poisoning processes operative on heated MOX gas sensors.

Image Sensors Enhance Camera Technologies

NASA Technical Reports Server (NTRS)

2010-01-01

In the 1990s, a Jet Propulsion Laboratory team led by Eric Fossum researched ways of improving complementary metal-oxide semiconductor (CMOS) image sensors in order to miniaturize cameras on spacecraft while maintaining scientific image quality. Fossum s team founded a company to commercialize the resulting CMOS active pixel sensor. Now called the Aptina Imaging Corporation, based in San Jose, California, the company has shipped over 1 billion sensors for use in applications such as digital cameras, camera phones, Web cameras, and automotive cameras. Today, one of every three cell phone cameras on the planet feature Aptina s sensor technology.

Soft X-ray-assisted detection method for airborne molecular contaminations (AMCs)

NASA Astrophysics Data System (ADS)

Kim, Changhyuk; Zuo, Zhili; Finger, Hartmut; Haep, Stefan; Asbach, Christof; Fissan, Heinz; Pui, David Y. H.

2015-03-01

Airborne molecular contaminations (AMCs) represent a wide range of gaseous contaminants in cleanrooms. Due to the unintentional nanoparticle or haze formation as well as doping caused by AMCs, improved monitoring and controlling methods for AMCs are urgent in the semiconductor industry. However, measuring ultra-low concentrations of AMCs in cleanrooms is difficult, especially, behind a gas filter. In this study, a novel detection method for AMCs, which is on-line, economical, and applicable for diverse AMCs, was developed by employing gas-to-particle conversion with soft X-ray, and then measuring the generated nanoparticles. Feasibility study of this method was conducted through the evaluations of granular-activated carbons (GACs), which are widely used AMC filter media. Sulfur dioxide (SO2) was used as an AMC for the feasibility study. Using this method, the ultra-low concentrations of SO2 behind GACs were determined in terms of concentrations of generated sulfuric acid (H2SO4) nanoparticles. By calculating SO2 concentrations from the nanoparticle concentrations using empirical correlation equations between them, remarkable sensitivity of this method to SO2 was shown, down to parts-per-trillions, which are too low to detect using commercial gas sensors. Also, the calculated SO2 concentrations showed good agreement with those measured simultaneously by a commercial SO2 monitor at parts-per-billions.

Qualification of a Multi-Channel Infrared Laser Absorption Spectrometer for Monitoring CO, HCl, HCN, HF, and CO2 Aboard Manned Spacecraft

NASA Technical Reports Server (NTRS)

Briggs, Ryan M.; Frez, Clifford; Forouhar, Siamak; May, Randy D.; Meyer, Marit E.; Kulis, Michael J.; Berger, Gordon M.

2015-01-01

Monitoring of specific combustion products can provide early-warning detection of accidental fires aboard manned spacecraft and also identify the source and severity of combustion events. Furthermore, quantitative in situ measurements are important for gauging levels of exposure to hazardous gases, particularly on long-duration missions where analysis of returned samples becomes impractical. Absorption spectroscopy using tunable laser sources in the 2 to 5 micrometer wavelength range enables accurate, unambiguous detection of CO, HCl, HCN, HF, and CO2, which are produced in varying amounts through the heating of electrical components and packaging materials commonly used aboard spacecraft. Here, we report on calibration and testing of a five-channel laser absorption spectrometer designed to accurately monitor ambient gas-phase concentrations of these five compounds, with low-level detection limits based on the Spacecraft Maximum Allowable Concentrations. The instrument employs a two-pass absorption cell with a total optical pathlength of 50 cm and a dedicated infrared semiconductor laser source for each target gas. We present results from testing the five-channel sensor in the presence of trace concentrations of the target compounds that were introduced using both gas sources and oxidative pyrolysis (non-flaming combustion) of solid material mixtures.

Enhancement of NH3 gas sensitivity at room temperature by carbon nanotube-based sensor coated with Co nanoparticles.

PubMed

Nguyen, Lich Quang; Phan, Pho Quoc; Duong, Huyen Ngoc; Nguyen, Chien Duc; Nguyen, Lam Huu

2013-01-30

Multi-walled carbon nanotube (MWCNT) film has been fabricated onto Pt-patterned alumina substrates using the chemical vapor deposition method for NH(3) gas sensing applications. The MWCNT-based sensor is sensitive to NH(3) gas at room temperature. Nanoclusters of Co catalysts have been sputtered on the surface of the MWCNT film to enhance gas sensitivity with respect to unfunctionalized CNT films. The gas sensitivity of Co-functionalized MWCNT-based gas sensors is thus significantly improved. The sensor exhibits good repeatability and high selectivity towards NH(3), compared with alcohol and LPG.

Investigating gas sensing mechanism of graphene oxide (GO) thin films through cross-selectivity to various gases

NASA Astrophysics Data System (ADS)

Kumar, Shani; Dhingra, Vishal; Garg, Amit; Chowdhuri, Arijit

2016-05-01

Worldwide researchers are actively engaged in utilizing Graphene and its related materials in gas sensing applications. A high surface-to-volume ratio that offers scope of optimization leading to enhanced sensing performance besides lower sensor operating temperatures are some advantages that graphene based sensors possess over conventional semiconducting metal oxide (SMO) sensors. Conventional SMO based gas sensors are known to suffer from problems of cross-selectivity where selectivity is understood to be a gas sensor's ability to preferentially detect one particular gas without responding to or experiencing interference from other gases present in the ambient. In the current study gas sensing mechanism of Graphene oxide (GO) thin films is investigated by repeatedly exposing the sensing configuration to various gases and its cross-selectivity response to the same is examined. In the investigation typical gas sensing response characteristics of the sensor configuration are studied in both oxidizing as well as reducing environments. The gas sensing data is acquired by means of Keithley 6487 picoammeter which is interfaced with a customized Gas Sensing Test Rig (GSTR) that provides a controlled ambient to the sensors for measurement of reproducible characteristics. GSTR further provided the option of varying the operating temperature and gas concentration for the different sensor configurations under study. XRD studies indicate formation of GO with typical crystallite size of 4.2 nm. UV-Vis investigations reveal a typical band-gap of 4.42 (eV) which is in conformity with those reported in the available literature.1,2

Novel Gas Sensor Based on ZnO Nanorod Circular Arrays for C2H5OH Gas Detection.

PubMed

Jianjiao, Zhang; Hongyan, Yue; Erjun, Guo; Shaolin, Zhang; Liping, Wang; Chunyu, Zhang; Xin, Gao; Jing, Chang; Hong, Zhang

2015-03-01

Novel side-heating gas sensor based on ZnO nanorod circular arrays was firstly fabricated by hydrothermal treatment assisted with a kind of simple dip-coating technique. The structure and morphologies of ZnO nanorods were characterized by X-ray diffraction (XRD), Scanning Electron Microscope (SEM), respectively. XRD result indicates that the obtained ZnO nanorods have good crystalline with the hexagonal wurtzite structure. SEM result indicates that ZnO nanorod arrays are vertically growth on the surface of ceramic tube of side-heating sensor with controlled diameter and length, narrow size distribution and high orientation. The gas sensing properties of ZnO nanorod circular arrays are also evaluated. Comparative to the sensor based on scattered ZnO nanorods responding to 25 ppm H2, CO, C6H5CH3 and C2H5OH gas, respectively, the sensing values of high orientation gas sensor are generally increased by 5%. This novel sensor has good application promising for the fabrication of cost effective and high performance gas sensors.

Nonlinear Optical Interactions in Semiconductors.

DTIC Science & Technology

1985-12-10

Physique du Solide et Energie Solaire We had on-going interaction with Dr. Christian Verie on the growth of high quality narrow-gap semiconductor crystals...The band gap energy of the semiconductor decreases with increasing temperature. Consequently, the absorption of light in the energy region of the...gas and, more importantly, will modulate the electron energy at the difference frequency, wI - 02" Under ordinary circumstances such an energy (or

Effect of Electrode Configuration on Nitric Oxide Gas Sensor Behavior.

PubMed

Cui, Ling; Murray, Erica P

2015-09-23

The influence of electrode configuration on the impedancemetric response of nitric oxide (NO) gas sensors was investigated for solid electrochemical cells [Au/yttria-stabilized zirconia (YSZ)/Au)]. Fabrication of the sensors was carried out at 1050 °C in order to establish a porous YSZ electrolyte that enabled gas diffusion. Two electrode configurations were studied where Au wire electrodes were either embedded within or wrapped around the YSZ electrolyte. The electrical response of the sensors was collected via impedance spectroscopy under various operating conditions where gas concentrations ranged from 0 to 100 ppm NO and 1%-18% O₂ at temperatures varying from 600 to 700 °C. Gas diffusion appeared to be a rate-limiting mechanism in sensors where the electrode configuration resulted in longer diffusion pathways. The temperature dependence of the NO sensors studied was independent of the electrode configuration. Analysis of the impedance data, along with equivalent circuit modeling indicated the electrode configuration of the sensor effected gas and ionic transport pathways, capacitance behavior, and NO sensitivity.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

TREFEX: Trend Estimation and Change Detection in the Response of MOX Gas Sensors

PubMed Central

Pashami, Sepideh; Lilienthal, Achim J.; Schaffernicht, Erik; Trincavelli, Marco

2013-01-01

Many applications of metal oxide gas sensors can benefit from reliable algorithms to detect significant changes in the sensor response. Significant changes indicate a change in the emission modality of a distant gas source and occur due to a sudden change of concentration or exposure to a different compound. As a consequence of turbulent gas transport and the relatively slow response and recovery times of metal oxide sensors, their response in open sampling configuration exhibits strong fluctuations that interfere with the changes of interest. In this paper we introduce TREFEX, a novel change point detection algorithm, especially designed for metal oxide gas sensors in an open sampling system. TREFEX models the response of MOX sensors as a piecewise exponential signal and considers the junctions between consecutive exponentials as change points. We formulate non-linear trend filtering and change point detection as a parameter-free convex optimization problem for single sensors and sensor arrays. We evaluate the performance of the TREFEX algorithm experimentally for different metal oxide sensors and several gas emission profiles. A comparison with the previously proposed GLR method shows a clearly superior performance of the TREFEX algorithm both in detection performance and in estimating the change time. PMID:23736853

UV-Assisted Alcohol Sensors using Gallium Nitride Nanowires Functionalized with Zinc Oxide and Tin Dioxide Nanoparticles

NASA Astrophysics Data System (ADS)

Bajpai, Ritu

The motivation behind this work has been to address two of the most challenging issues posed to semiconductor gas sensors--- tuning the device selectivity and sensitivity to a wide variety of gases. In a chemiresistor type nanowire sensor, the sensitivity and selectivity depend on the interaction of different chemical analytes with the nanowire surface. Constrained by the surface properties of the nanowire material, most nanowire sensors can detect only specific type of analytes. In order to make a nano-sensor array for a wide range of analytes, there is a need to tune the device sensitivity and selectivity towards different chemicals. Employing the inherent advantages of nanostructure based sensing such as large surface area, miniature size, low power consumption, and nmol/mol (ppb) sensitivity, an attempt has been made to propose a device with tunable selectivity and sensitivity. The idea proposed in this work is to functionalize GaN nanowires which have relatively inactive surface properties (i.e., with no chemiresistive sensitivity to different classes of organic vapors), with analyte dependent active metal oxides. The selectivity of the sensor devices is controlled independent of the surface properties of the nanowire itself. It is the surface properties of the functionalizing metal oxides which determine the selectivity of these sensors. Further facilitated by the proposed fabrication technique, these sensors can be easily tuned to detect different gases. The prototype developed in this work is that of a UV assisted alcohol sensor using GaN nanowires functionalized with ZnO and SnO2 nanoparticles. As opposed to the widely demonstrated metal oxide based sensors assisted by elevated temperature, the operation of photoconductive semiconductor sensor devices such as those fabricated in this work, can also be assisted by UV illumination at room temperature. Temperature assisted sensing requires an integrated on-chip heater, which could impose constraints on the device fabrication process conditions. Additionally, light assisted sensing can be employed to tailor device response towards an analyte as demonstrated in this work. Therefore, there are two control knobs available for these sensor devices which are independent of the nanowire surface properties: i) sensor selectivity, regulated by the nanoparticle material selection ii) percentage response, tuned by the intensity of the incident light. Due to the small magnitude of device operating current and sensor activation at low illumination intensity (375 nW/cm2 at 365 nm wavelength has been used in this work), these sensors have low power consumption which makes them suitable for portable battery assisted operation. A fabrication recipe for freely suspended two-terminal nanowire devices has been developed. The deposition of nanoparticles was performed using the sputter deposition technique. A change in device current was observed when the device was exposed to alcohol vapors (methanol, ethanol, propanol, and butanol) at room temperature under 215 nm--400 nm UV illumination at 365 nm wavelength. The sensor reproducibly responded to a wide range of alcohol vapor concentrations, from 5000 mumol/mol (ppm) down to 200 nmol/mol (ppb) in air. Notably, the devices show low sensitivity to acetone and hexane, which allows them to selectively detect the alcohol vapors mixed with these two common volatile organic compounds (VOCs). The sensor response was not observed without UV excitation. To make a simplified quantitative and qualitative study of the sensitivity variation with variation of light intensity, the behavior of ZnO nanowire sensor devices was investigated in addition to the hybrid metal-oxide nanoparticle/GaN nanowire devices. With an increase in the light intensity, a corresponding increase in the device sensitivity was observed. In addition to the proposed sensor fabrication technique being a highly suitable candidate for making nano-sensor arrays for detection of a wide range of gases, the alcohol sensors fabricated in this work have many practical applications such as monitoring air quality, and testing the blood alcohol content (BAC) for impaired drivers.

A Rapid Process for Fabricating Gas Sensors

PubMed Central

Hsiao, Chun-Ching; Luo, Li-Siang

2014-01-01

Zinc oxide (ZnO) is a low-toxicity and environmentally-friendly material applied on devices, sensors or actuators for “green” usage. A porous ZnO film deposited by a rapid process of aerosol deposition (AD) was employed as the gas-sensitive material in a CO gas sensor to reduce both manufacturing cost and time, and to further extend the AD application for a large-scale production. The relative resistance change (ΔR/R) of the ZnO gas sensor was used for gas measurement. The fabricated ZnO gas sensors were measured with operating temperatures ranging from 110 °C to 180 °C, and CO concentrations ranging from 100 ppm to 1000 ppm. The sensitivity and the response time presented good performance at increasing operating temperatures and CO concentrations. AD was successfully for applied for making ZnO gas sensors with great potential for achieving high deposition rates at low deposition temperatures, large-scale production and low cost. PMID:25010696

High-Speed Binary-Output Image Sensor

NASA Technical Reports Server (NTRS)

Fossum, Eric; Panicacci, Roger A.; Kemeny, Sabrina E.; Jones, Peter D.

1996-01-01

Photodetector outputs digitized by circuitry on same integrated-circuit chip. Developmental special-purpose binary-output image sensor designed to capture up to 1,000 images per second, with resolution greater than 10 to the 6th power pixels per image. Lower-resolution but higher-frame-rate prototype of sensor contains 128 x 128 array of photodiodes on complementary metal oxide/semiconductor (CMOS) integrated-circuit chip. In application for which it is being developed, sensor used to examine helicopter oil to determine whether amount of metal and sand in oil sufficient to warrant replacement.

Advanced Photonic Sensors Enabled by Semiconductor Bonding

DTIC Science & Technology

2010-05-31

a dry scroll backing pump to maintain the high differential pressure between the UV gun and the sample/analysis chamber. We also replaced the...semiconductor materials in an ultra-high vacuum (UHV) environment where the properties of the interface can be controlled with atomic-level precision. Such...year research program, we designed and constructed a unique system capable of fusion bonding two wafers in an ultra-high vacuum environment. This system

Quantum Dots Based Rad-Hard Computing and Sensors

NASA Technical Reports Server (NTRS)

Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.

2001-01-01

Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.

Real-time two-dimensional imaging of potassium ion distribution using an ion semiconductor sensor with charged coupled device technology.

PubMed

Hattori, Toshiaki; Masaki, Yoshitomo; Atsumi, Kazuya; Kato, Ryo; Sawada, Kazuaki

2010-01-01

Two-dimensional real-time observation of potassium ion distributions was achieved using an ion imaging device based on charge-coupled device (CCD) and metal-oxide semiconductor technologies, and an ion selective membrane. The CCD potassium ion image sensor was equipped with an array of 32 × 32 pixels (1024 pixels). It could record five frames per second with an area of 4.16 × 4.16 mm(2). Potassium ion images were produced instantly. The leaching of potassium ion from a 3.3 M KCl Ag/AgCl reference electrode was dynamically monitored in aqueous solution. The potassium ion selective membrane on the semiconductor consisted of plasticized poly(vinyl chloride) (PVC) with bis(benzo-15-crown-5). The addition of a polyhedral oligomeric silsesquioxane to the plasticized PVC membrane greatly improved adhesion of the membrane onto Si(3)N(4) of the semiconductor surface, and the potential response was stabilized. The potential response was linear from 10(-2) to 10(-5) M logarithmic concentration of potassium ion. The selectivity coefficients were K(K(+),Li(+))(pot) = 10(-2.85), K(K(+),Na(+))(pot) = 10(-2.30), K(K(+),Rb(+))(pot) =10(-1.16), and K(K(+),Cs(+))(pot) = 10(-2.05).

Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ma, Jiaju; Zhang, Yang; Wang, Xiaoxin; Ying, Lei; Masoodian, Saleh; Wang, Zhiyuan; Starkey, Dakota A.; Deng, Wei; Kumar, Rahul; Wu, Yang; Ghetmiri, Seyed Amir; Yu, Zongfu; Yu, Shui-Qing; Salamo, Gregory J.; Fossum, Eric R.; Liu, Jifeng

2017-05-01

This research investigates the fundamental limits and trade-space of quantum semiconductor photodetectors using the Schrödinger equation and the laws of thermodynamics.We envision that, to optimize the metrics of single photon detection, it is critical to maximize the optical absorption in the minimal volume and minimize the carrier transit process simultaneously. Integration of photon management with quantum charge transport/redistribution upon optical excitation can be engineered to maximize the quantum efficiency (QE) and data rate and minimize timing jitter at the same time. Due to the ultra-low capacitance of these quantum devices, even a single photoelectron transfer can induce a notable change in the voltage, enabling non-avalanche single photon detection at room temperature as has been recently demonstrated in Si quanta image sensors (QIS). In this research, uniform III-V quantum dots (QDs) and Si QIS are used as model systems to test the theory experimentally. Based on the fundamental understanding, we also propose proof-of-concept, photon-managed quantum capacitance photodetectors. Built upon the concepts of QIS and single electron transistor (SET), this novel device structure provides a model system to synergistically test the fundamental limits and tradespace predicted by the theory for semiconductor detectors. This project is sponsored under DARPA/ARO's DETECT Program: Fundamental Limits of Quantum Semiconductor Photodetectors.

Proton Nonionizing Energy Loss (NIEL) for Device Applications

NASA Technical Reports Server (NTRS)

Jun, Insoo; Xapsos, Michael A.; Messenger, Scott R.; Burke, Edward A.; Walters, Robert J.; Summers, Geoff; Jordan, Thomas

2003-01-01

Nonionizing energy loss (NIEL) is a quantity that describes the rate of energy loss due to atomic displacements as a particle traverses a material. The product of the NIEL and the particle fluence (time integrated flux) gives the displacement damage energy deposition per unit mass of material. NIEL plays the same role to the displacement damage energy deposition as the stopping power to the total ionizing dose (TID). The concept of NIEL has been very useful for correlating particle induced displacement damage effects in semiconductor and optical devices. Many studies have successfully demonstrated that the degradation of semiconductor devices or optical sensors in a radiation field can be linearly correlated to the displacement damage energy, and subsequently to the NIEL deposited in the semiconductor devices or optical sensors. In addition, the NIEL concept was also useful in the study of both Si and GaAs solar cells and of high temperature superconductors, and at predicting the survivability of detectors used at the LHC at CERN. On the other hand, there are some instances where discrepancies are observed in the application of NIEL, most notably in GaAs semiconductor devices. However, NIEL is still a valuable tool, and can be used to scale damages produced by different particles and in different environments, even though this is not understood at the microscopic level.

Gas Sensors Based on Conducting Polymers

PubMed Central

Bai, Hua; Shi, Gaoquan

2007-01-01

The gas sensors fabricated by using conducting polymers such as polyaniline (PAni), polypyrrole (PPy) and poly (3,4-ethylenedioxythiophene) (PEDOT) as the active layers have been reviewed. This review discusses the sensing mechanism and configurations of the sensors. The factors that affect the performances of the gas sensors are also addressed. The disadvantages of the sensors and a brief prospect in this research field are discussed at the end of the review.

Rapid determination of pyridine derivatives by dispersive liquid-liquid microextraction coupled with gas chromatography/gas sensor based on nanostructured conducting polypyrrole.

PubMed

Pirsa, Sajad; Alizadeh, Naader

2011-12-15

Polypyrrole (PPy) gas sensor has been prepared by polymerization of pyrrole on surfaces of commercial polymer fibers in the presence of an oxidizing agent. The sensing behavior of PPy gas sensor was investigated in the presence of pyridine derivatives. The resistive responses of the PPy gas sensor to pyridine derivatives were in the order of quinoline>pyridine>4-methyl pyridine and 2-methyl pyridine. The PPy gas sensor was used as gas chromatography (GC) detector and exhibited linear responses to pyridine derivatives in the ranges 40-4,000 ng. Dispersive liquid-liquid microextraction (DLLME) combined with GC/PPy gas sensor has been developed for simultaneous determination of pyridine derivatives and quinoline. The purposed method was used for determination of pyridine derivatives from cigarette smoke. The GC runs were completed in 4 min. The reproducibility of this method is suitable and good standard deviations were obtained. RSD value is less than 10% for all analytes. Copyright © 2011 Elsevier B.V. All rights reserved.

Nanosized TiO[subscript 2] for Photocatalytic Water Splitting Studied by Oxygen Sensor and Data Logger

ERIC Educational Resources Information Center

Zhang, Ruinan; Liu, Song; Yuan, Hongyan; Xiao, Dan; Choi, Martin M. F.

2012-01-01

Photocatalytic water splitting by semiconductor photocatalysts has attracted considerable attention in the past few decades. In this experiment, nanosized titanium dioxide (nano-TiO[subscript 2]) particles are used to photocatalytically split water, which is then monitored by an oxygen sensor. Sacrificial reagents such as organics (EDTA) and metal…

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

In situ combustion measurements of H2O and temperature near 2.5 µm using tunable diode laser absorption

NASA Astrophysics Data System (ADS)

Farooq, Aamir; Jeffries, Jay B.; Hanson, Ronald K.

2008-07-01

In situ combustion measurements of water vapor concentration and gas temperature were carried out with a new tunable diode laser sensor near 2.5 µm. Recent availability of room-temperature semiconductor diode lasers operating at longer wavelengths provides access to fundamental vibrational bands (ν1 and ν3) of H2O. These bands have stronger absorption line strength compared to the overtone (2ν1, 2ν3) and combination (ν1 + ν3) vibrational bands in the near-infrared region probed previously with telecommunication diode lasers. The absorption transitions of H2O vapor in the 2.5-3.0 µm region are systematically analyzed via spectral simulation, and optimal spectral line pairs are selected for combustion measurements in the temperature range of 1000-2500 K. Fundamental spectroscopic parameters (line strength, line position and line-broadening coefficients) of the selected transitions are determined via laboratory measurements in a heated cell. Absorption measurements of H2O concentration and temperature are then made in a laboratory flat-flame burner to illustrate the potential of this sensor for sensitive and accurate measurements in combustion gases with short optical path lengths.

Piezo-Phototronic Matrix via a Nanowire Array.

PubMed

Zhang, Yang; Zhai, Junyi; Wang, Zhong Lin

2017-12-01

Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A novel ethanol gas sensor-ZnS/ cyclohexylamine hybrid nanowires.

PubMed

Xu, Lin; Song, Hongwei; Zhang, Tong; Fan, Huitao; Fan, Libo; Wang, Yu; Dong, Biao; Bai, Xue

2011-03-01

We fabricated a novel ethanol gas sensor based on organic-inorganic ZnS/cyclohexylamine (CHA) nanowires via a solvothermal route. The sensor exhibited significantly better performance with response time of approximately 0.6 s and recovery time of approximately 10 s even under a low ethanol concentration and the high surface area, small nanofiber diameter, and hybrid nature made the ZnS/CHA nanowire gas sensor have high sensitivity to ethanol gas at a lower operating current of 160 mA. Moreover, the gas sensing mechanism was proposed on the basis of the two simultaneous steps to explain the adsorbing process due to the hybrid nature. This work indicates that the ZnS/CHA hybrid can be a novel candidate for the ethanol gas sensor with high performance.

Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

PubMed

Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan

2015-07-22

Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.

Gating capacitive field-effect sensors by the charge of nanoparticle/molecule hybrids.

PubMed

Poghossian, Arshak; Bäcker, Matthias; Mayer, Dirk; Schöning, Michael J

2015-01-21

The semiconductor field-effect platform is a powerful tool for chemical and biological sensing with direct electrical readout. In this work, the field-effect capacitive electrolyte-insulator-semiconductor (EIS) structure - the simplest field-effect (bio-)chemical sensor - modified with citrate-capped gold nanoparticles (AuNPs) has been applied for a label-free electrostatic detection of charged molecules by their intrinsic molecular charge. The EIS sensor detects the charge changes in AuNP/molecule inorganic/organic hybrids induced by the molecular adsorption or binding events. The feasibility of the proposed detection scheme has been exemplarily demonstrated by realizing capacitive EIS sensors consisting of an Al-p-Si-SiO2-silane-AuNP structure for the label-free detection of positively charged cytochrome c and poly-d-lysine molecules as well as for monitoring the layer-by-layer formation of polyelectrolyte multilayers of poly(allylamine hydrochloride)/poly(sodium 4-styrene sulfonate), representing typical model examples of detecting small proteins and macromolecules and the consecutive adsorption of positively/negatively charged polyelectrolytes, respectively. For comparison, EIS sensors without AuNPs have been investigated, too. The adsorption of molecules on the surface of AuNPs has been verified via the X-ray photoelectron spectroscopy method. In addition, a theoretical model of the functioning of the capacitive field-effect EIS sensor functionalized with AuNP/charged-molecule hybrids has been discussed.

A Passive Radio-Frequency Identification (RFID) Gas Sensor With Self-Correction Against Fluctuations of Ambient Temperature

PubMed Central

Potyrailo, Radislav A.; Surman, Cheryl

2013-01-01

Uncontrolled fluctuations of ambient temperature in the field typically greatly reduce accuracy of gas sensors. In this study, we developed an approach for the self-correction against fluctuations of ambient temperature of individual gas and vapor sensors. The main innovation of our work is in the temperature correction which is accomplished without the need for a separate uncoated reference sensor or a separate temperature sensor. Our sensors are resonant inductor-capacitor-resistor (LCR) transducers coated with sensing materials and operated as multivariable passive (battery-free) radio-frequency identification (RFID) sensors. Using our developed approach, we performed quantitation of an exemplary vapor over the temperature range from 25 to 40 °C. This technical solution will be attractive in numerous applications where temperature stabilization of a gas sensor or addition of auxiliary temperature or uncoated reference sensors is prohibitive. PMID:23956496

Enhancement of NH3 Gas Sensitivity at Room Temperature by Carbon Nanotube-Based Sensor Coated with Co Nanoparticles

PubMed Central

Nguyen, Lich Quang; Phan, Pho Quoc; Duong, Huyen Ngoc; Nguyen, Chien Duc; Nguyen, Lam Huu

2013-01-01

Multi-walled carbon nanotube (MWCNT) film has been fabricated onto Pt-patterned alumina substrates using the chemical vapor deposition method for NH3 gas sensing applications. The MWCNT-based sensor is sensitive to NH3 gas at room temperature. Nanoclusters of Co catalysts have been sputtered on the surface of the MWCNT film to enhance gas sensitivity with respect to unfunctionalized CNT films. The gas sensitivity of Co-functionalized MWCNT-based gas sensors is thus significantly improved. The sensor exhibits good repeatability and high selectivity towards NH3, compared with alcohol and LPG. PMID:23364198

Fully Stretchable and Humidity-Resistant Quantum Dot Gas Sensors.

PubMed

Song, Zhilong; Huang, Zhao; Liu, Jingyao; Hu, Zhixiang; Zhang, Jianbing; Zhang, Guangzu; Yi, Fei; Jiang, Shenglin; Lian, Jiabiao; Yan, Jia; Zang, Jianfeng; Liu, Huan

2018-05-25

Stretchable gas sensors that accommodate the shape and motion characteristics of human body are indispensable to a wearable or attachable smart sensing system. However, these gas sensors usually have poor response and recovery kinetics when operated at room temperature, and especially suffer from humidity interference and mechanical robustness issues. Here, we demonstrate the first fully stretchable gas sensors which are operated at room temperature with enhanced stability against humidity. We created a crumpled quantum dot (QD) sensing layer on elastomeric substrate with flexible graphene as electrodes. Through the control over the prestrain of the flexible substrate, we achieved a 5.8 times improvement in NO 2 response at room temperature with desirable stretchability even under 1000 stretch/relax cycles mechanism deformation. The uniformly wavy structural configuration of the crumpled QD gas-sensing layer enabled an improvement in the antihumidity interference. The sensor response shows a minor vibration of 15.9% at room temperature from relative humidity of 0 to 86.7% compared to that of the flat-film sensors with vibration of 84.2%. The successful assembly of QD solids into a crumpled gas-sensing layer enabled a body-attachable, mechanically robust, and humidity-resistant gas sensor, opening up a new pathway to room-temperature operable gas sensors which may be implemented in future smart sensing systems such as stretchable electronic nose and multipurpose electronic skin.

A flexible, transparent and high-performance gas sensor based on layer-materials for wearable technology

NASA Astrophysics Data System (ADS)

Zheng, Zhaoqiang; Yao, Jiandong; Wang, Bing; Yang, Guowei

2017-10-01

Gas sensors play a vital role among a wide range of practical applications. Recently, propelled by the development of layered materials, gas sensors have gained much progress. However, the high operation temperature has restricted their further application. Herein, via a facile pulsed laser deposition (PLD) method, we demonstrate a flexible, transparent and high-performance gas sensor made of highly-crystalline indium selenide (In2Se3) film. Under UV-vis-NIR light or even solar energy activation, the constructed gas sensors exhibit superior properties for detecting acetylene (C2H2) gas at room temperature. We attribute these properties to the photo-induced charger transfer mechanism upon C2H2 molecule adsorption. Moreover, no apparent degradation in the device properties is observed even after 100 bending cycles. In addition, we can also fabricate this device on rigid substrates, which is also capable to detect gas molecules at room temperature. These results unambiguously distinguish In2Se3 as a new candidate for future application in monitoring C2H2 gas at room temperature and open up new opportunities for developing next generation full-spectrum activated gas sensors.

A flexible, transparent and high-performance gas sensor based on layer-materials for wearable technology.

PubMed

Zheng, Zhaoqiang; Yao, Jiandong; Wang, Bing; Yang, Guowei

2017-10-13

Gas sensors play a vital role among a wide range of practical applications. Recently, propelled by the development of layered materials, gas sensors have gained much progress. However, the high operation temperature has restricted their further application. Herein, via a facile pulsed laser deposition (PLD) method, we demonstrate a flexible, transparent and high-performance gas sensor made of highly-crystalline indium selenide (In 2 Se 3 ) film. Under UV-vis-NIR light or even solar energy activation, the constructed gas sensors exhibit superior properties for detecting acetylene (C 2 H 2 ) gas at room temperature. We attribute these properties to the photo-induced charger transfer mechanism upon C 2 H 2 molecule adsorption. Moreover, no apparent degradation in the device properties is observed even after 100 bending cycles. In addition, we can also fabricate this device on rigid substrates, which is also capable to detect gas molecules at room temperature. These results unambiguously distinguish In 2 Se 3 as a new candidate for future application in monitoring C 2 H 2 gas at room temperature and open up new opportunities for developing next generation full-spectrum activated gas sensors.

New Gas Polarographic Hydrogen Sensor

NASA Technical Reports Server (NTRS)

Dominguez, Jesus A.; Barile, Ron

2004-01-01

Polarography is the measurement of the current that flows in solution as a function of an applied voltage. The actual form of the observed polarographic current depends upon the manner in which the voltage is applied and on the characteristics of the working electrode. The new gas polarographic H2 sensor shows a current level increment with concentration of the gaseous H2 similar to those relating to metal ions in liquid electrolytes in well-known polarography. This phenomenon is caused by the fact that the diffusion of the gaseous H2 through a gas diffusion hole built in the sensor is a rate-determining step in the gaseous-hydrogen sensing mechanism. The diffusion hole artificially limits the diffusion of the gaseous H2 toward the electrode located at the sensor cavity. This gas polarographic H2 sensor. is actually an electrochemical-pumping cell since the gaseous H2 is in fact pumped via the electrochemical driving force generated between the electrodes. Gaseous H2 enters the diffusion hole and reaches the first electrode (anode) located in the sensor cavity to be transformed into an H+ ions or protons; H+ ions pass through the electrolyte and reach the second electrode (cathode) to be reformed to gaseous H2. Gas polarographic 02 sensors are commercially available; a gas polarographic 02 sensor was used to prove the feasibility of building a new gas polarographic H2 sensor.

Solid State Gas Sensor Research in Germany – a Status Report

PubMed Central

Moos, Ralf; Sahner, Kathy; Fleischer, Maximilian; Guth, Ulrich; Barsan, Nicolae; Weimar, Udo

2009-01-01

This status report overviews activities of the German gas sensor research community. It highlights recent progress in the field of potentiometric, amperometric, conductometric, impedimetric, and field effect-based gas sensors. It is shown that besides step-by-step improvements of conventional principles, e.g. by the application of novel materials, novel principles turned out to enable new markets. In the field of mixed potential gas sensors, novel materials allow for selective detection of combustion exhaust components. The same goal can be reached by using zeolites for impedimetric gas sensors. Operando spectroscopy is a powerful tool to learn about the mechanisms in n-type and in p-type conductometric sensors and to design knowledge-based improved sensor devices. Novel deposition methods are applied to gain direct access to the material morphology as well as to obtain dense thick metal oxide films without high temperature steps. Since conductometric and impedimetric sensors have the disadvantage that a current has to pass the gas sensitive film, film morphology, electrode materials, and geometrical issues affect the sensor signal. Therefore, one tries to measure directly the Fermi level position either by measuring the gas-dependent Seebeck coefficient at high temperatures or at room temperature by applying a modified miniaturized Kelvin probe method, where surface adsorption-based work function changes drive the drain-source current of a field effect transistor. PMID:22408529

Theoretical study of the structural and electronic properties of novel stanene-based buckled nanotubes and their adsorption behaviors

NASA Astrophysics Data System (ADS)

Abbasi, Amirali; Sardroodi, Jaber Jahanbin; Ebrahimzadeh, Alireza Rastkar; Yaghoobi, Mina

2018-03-01

Density functional theory calculations were performed to investigate the geometrical, electronic and adsorption properties of stanene based nanotubes in order to fully exploit the gas sensing capability of these nanotubes. The strain energy, structural parameters and electronic properties of stanene-based nanotubes with armchair and zigzag chirality with various diameters were examined in detail. The results show that, these nanotubes have a buckled structure, in which the tin atoms were arranged in chair-like honeycomb configuration. Calculated strain energy for considered nanotubes are relatively small compared to some other nanotubes pointed to flexibility of stanene mono layer. It was found that the strain energies for (4, 0), (5, 0) and (6, 0) nanotubes have negative values, indicating their stability with respect to stanene nanosheet. The band structure calculations reveal that the armchair nanotubes are semiconductors with two maximums with nearly same energies in valence band. However, the zigzag ones show both conductor and semiconductor behaviors by direct band gap in ᴦ point. Also the spatial distribution of molecular orbitals in valence band maximums and conduction band minimums were presented and discussed. Moreover, the adsorption behaviors of (6, 6) and (8, 8) nanotubes as chemical O3 detection device were investigated in detail. We found that O3 molecule dissociates into O2 over the considered nanotubes, being an effective strategy to help in the reduction of the concentration of these harmful pollutants in the environment. The results also suggest that O3 dissociation over the (6, 6) nanotube is more favorable in energy than that on the (8, 8) nanotube. The results present a great potential of stanene based nanotube for application as a highly sensitive ozone gas sensor.

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

PubMed Central

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-01-01

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively. PMID:27792131

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose.

PubMed

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-10-25

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal-oxide-semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm². The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

Fabrication of Smart Chemical Sensors Based on Transition-Doped-Semiconductor Nanostructure Materials with µ-Chips

PubMed Central

Rahman, Mohammed M.; Khan, Sher Bahadar; Asiri, Abdullah M.

2014-01-01

Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm2) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r2 = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm−2mM−1 and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I–V sensors on μ-chips. PMID:24454785

Fabrication of smart chemical sensors based on transition-doped-semiconductor nanostructure materials with µ-chips.

PubMed

Rahman, Mohammed M; Khan, Sher Bahadar; Asiri, Abdullah M

2014-01-01

Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm(2)) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r(2) = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm(-2)mM(-1) and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I-V sensors on μ-chips.

Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

NASA Astrophysics Data System (ADS)

Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

2007-10-01

In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

PubMed

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Comparative assessment of erbium fiber ring lasers and reflective SOA linear lasers for fiber Bragg grating dynamic strain sensing.

PubMed

Wei, Heming; Krishnaswamy, Sridhar

2017-05-01

Fiber Bragg grating (FBG) dynamic strain sensors using both an erbium-based fiber ring laser configuration and a reflective semiconductor optical amplifier (RSOA)-based linear laser configuration are investigated theoretically and experimentally. Fiber laser models are first presented to analyze the output characteristics of both fiber laser configurations when the FBG sensor is subjected to dynamic strains at high frequencies. Due to differences in the transition times of erbium and the semiconductor (InP/InGaAsP), erbium-doped fiber amplifier (EDFA)- and RSOA-based fiber lasers exhibit different responses and regimes of stability when the FBG is subjected to dynamic strains. The responses of both systems are experimentally verified using an adaptive photorefractive two-wave mixing (TWM) spectral demodulation technique. The experimental results show that the RSOA-FBG fiber linear cavity laser is stable and can stably respond to dynamic strains at high frequencies. An example application using a multiplexed TWM interferometer to demodulate multiple FBG sensors is also discussed.

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

PubMed Central

Chen, Min-Cheng; Chen, Hao-Yu; Lin, Chia-Yi; Chien, Chao-Hsin; Hsieh, Tsung-Fan; Horng, Jim-Tong; Qiu, Jian-Tai; Huang, Chien-Chao; Ho, Chia-Hua; Yang, Fu-Liang

2012-01-01

This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording. PMID:22666012

Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoidn, Oliver R.; Seidler, Gerald T., E-mail: seidler@uw.edu

We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energymore » resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.« less

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

PubMed Central

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-01-01

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

Zinc Alloys for the Fabrication of Semiconductor Devices

NASA Technical Reports Server (NTRS)

Ryu, Yungryel; Lee, Tae S.

2009-01-01

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and visible transmitters and detectors, high-frequency radar, biomedical imaging, chemical compound identification, molecular identification and structure, gas sensors, imaging systems, and for the fundamental studies of atoms, molecules, gases, vapors, and solids.

Hydrogen gas sensing feature of polyaniline/titania (rutile) nanocomposite at environmental conditions

NASA Astrophysics Data System (ADS)

Milani Moghaddam, Hossain; Nasirian, Shahruz

2014-10-01

The resistance-based sensors of polyaniline/titania (rutile) nanocomposite (TPNC) were prepared by spin coating technique onto an epoxy glass substrate with Cu-interdigited electrodes to study their hydrogen (H2) gas sensing features. Our findings are that the change of the surface morphology, porosity and wt% of titania in TPNCs have a significant effect on H2 gas sensing of sensors. All of the sensors had a reproducibility response toward 0.8 vol% H2 gas at room temperature, air pressure and 50% relative humidity. A sensor with 40 wt% of titania nanoparticles had better response/recovery time and the response than other sensors. Moreover, H2 gas sensing mechanism of TPNC sensors based contact areas and the correlation of energy levels between PANI chains and the titania grains were studied.

Ce doped NiO nanoparticles as selective NO2 gas sensor

NASA Astrophysics Data System (ADS)

Gawali, Swati R.; Patil, Vithoba L.; Deonikar, Virendrakumar G.; Patil, Santosh S.; Patil, Deepak R.; Patil, Pramod S.; Pant, Jayashree

2018-03-01

Metal oxide gas sensors are promising portable gas detection devices because of their advantages such as low cost, easy production and compact size. The performance of such sensors is strongly dependent on material properties such as morphology, structure and doping. In the present study, we report the effect of cerium (Ce) doping on nickel oxide (NiO) nano-structured thin film sensors towards various gases. Bare NiO and Ce doped NiO nanoparticles (Ce:NiO) were synthesized by sol-gel method. To understand the effect of Ce doping in nickel oxide, various molar percentages of Ce with respect to nickel were incorporated. The structure, phase, morphology and band-gap energy of as-synthesized nanoparticles were studied by XRD, SEM, EDAX and UV-vis spectroscopy. Thin film gas sensors of all the samples were prepared and subjected to various gases such as LPG, NH3, CH3COCH3 and NO2. A systematic and comparative study reveals an enhanced gas sensing performance of Ce:NiO sensors towards NO2 gas. The maximum sensitivity for NO2 gas is around 0.719% per ppm at moderate operating temperature of 150 °C for 0.5% Ce:NiO thin film gas sensor. The enhanced gas sensing performance for Ce:NiO is attributed to the distortion of crystal lattice caused by doping of Ce into NiO.

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

NASA Astrophysics Data System (ADS)

Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

2018-04-01

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or γ rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (μe τe) of a 500 μ m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The μe τe products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average μe τe of 1.0 ṡ 10‑4 cm2V‑1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

A Review on Surface Stress-Based Miniaturized Piezoresistive SU-8 Polymeric Cantilever Sensors

NASA Astrophysics Data System (ADS)

Mathew, Ribu; Ravi Sankar, A.

2018-06-01

In the last decade, microelectromechanical systems (MEMS) SU-8 polymeric cantilevers with piezoresistive readout combined with the advances in molecular recognition techniques have found versatile applications, especially in the field of chemical and biological sensing. Compared to conventional solid-state semiconductor-based piezoresistive cantilever sensors, SU-8 polymeric cantilevers have advantages in terms of better sensitivity along with reduced material and fabrication cost. In recent times, numerous researchers have investigated their potential as a sensing platform due to high performance-to-cost ratio of SU-8 polymer-based cantilever sensors. In this article, we critically review the design, fabrication, and performance aspects of surface stress-based piezoresistive SU-8 polymeric cantilever sensors. The evolution of surface stress-based piezoresistive cantilever sensors from solid-state semiconductor materials to polymers, especially SU-8 polymer, is discussed in detail. Theoretical principles of surface stress generation and their application in cantilever sensing technology are also devised. Variants of SU-8 polymeric cantilevers with different composition of materials in cantilever stacks are explained. Furthermore, the interdependence of the material selection, geometrical design parameters, and fabrication process of piezoresistive SU-8 polymeric cantilever sensors and their cumulative impact on the sensor response are also explained in detail. In addition to the design-, fabrication-, and performance-related factors, this article also describes various challenges in engineering SU-8 polymeric cantilevers as a universal sensing platform such as temperature and moisture vulnerability. This review article would serve as a guideline for researchers to understand specifics and functionality of surface stress-based piezoresistive SU-8 cantilever sensors.[Figure not available: see fulltext.

40 CFR 86.094-25 - Maintenance.

Code of Federal Regulations, 2010 CFR

2010-07-01

... sensors (including oxygen sensor if installed) and actuators. (D) Exhaust gas recirculation system..., and for 1985 and Later Model Year New Gasoline Fueled, Natural Gas-Fueled, Liquefied Petroleum Gas... trucks and heavy-duty engines, the adjustment, cleaning, repair, or replacement of the oxygen sensor...

40 CFR 86.094-25 - Maintenance.

Code of Federal Regulations, 2011 CFR

2011-07-01

... sensors (including oxygen sensor if installed) and actuators. (D) Exhaust gas recirculation system..., and for 1985 and Later Model Year New Gasoline Fueled, Natural Gas-Fueled, Liquefied Petroleum Gas... trucks and heavy-duty engines, the adjustment, cleaning, repair, or replacement of the oxygen sensor...

A highly selective and self-powered gas sensor via organic surface functionalization of p-Si/n-ZnO diodes.

PubMed

Hoffmann, Martin W G; Mayrhofer, Leonhard; Casals, Olga; Caccamo, Lorenzo; Hernandez-Ramirez, Francisco; Lilienkamp, Gerhard; Daum, Winfried; Moseler, Michael; Waag, Andreas; Shen, Hao; Prades, J Daniel

2014-12-17

Selectivity and low power consumption are major challenges in the development of sophisticated gas sensor devices. A sensor system is presented that unifies selective sensor-gas interactions and energy-harvesting properties, using defined organic-inorganic hybrid materials. Simulations of chemical-binding interactions and the consequent electronic surface modulation give more insight into the complex sensing mechanism of selective gas detection. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metal Oxide Gas Sensors: Sensitivity and Influencing Factors

PubMed Central

Wang, Chengxiang; Yin, Longwei; Zhang, Luyuan; Xiang, Dong; Gao, Rui

2010-01-01

Conductometric semiconducting metal oxide gas sensors have been widely used and investigated in the detection of gases. Investigations have indicated that the gas sensing process is strongly related to surface reactions, so one of the important parameters of gas sensors, the sensitivity of the metal oxide based materials, will change with the factors influencing the surface reactions, such as chemical components, surface-modification and microstructures of sensing layers, temperature and humidity. In this brief review, attention will be focused on changes of sensitivity of conductometric semiconducting metal oxide gas sensors due to the five factors mentioned above. PMID:22294916

Application of Notched Long-Period Fiber Grating Based Sensor for CO2 Gas Sensing

NASA Astrophysics Data System (ADS)

Wu, Chao-Wei; Chiang, Chia-Chin

2016-01-01

An inductively coupled plasma etching process to fabricate notched long-period fiber gratings for CO2 gas sensing is proposed in this article. In the gas sensing test, the 15% mixed CO2 gas was used for characterization of CO2 adsorption by the amine-modified nanoporous silica foams of the notched long-period fiber grating sensor. The results shows the spectra were changed with the CO2 gas flow within 13 min. During the absorption process, the transmission of the resonant dip was decreased by 2.884 dB. Therefore, the proposed notched long-period fiber grating gas sensor shows good performance and is suitable as a gas sensor for monitoring the CO2 adsorption process.

Systems and methods for detecting a flame in a fuel nozzle of a gas turbine

DOEpatents

Kraemer, Gilbert Otto; Storey, James Michael; Lipinski, John; Mestroni, Julio Enrique; Williamson, David Lee; Marshall, Jason Randolph; Krull, Anthony

2013-05-07

A system may detect a flame about a fuel nozzle of a gas turbine. The gas turbine may have a compressor and a combustor. The system may include a first pressure sensor, a second pressure sensor, and a transducer. The first pressure sensor may detect a first pressure upstream of the fuel nozzle. The second pressure sensor may detect a second pressure downstream of the fuel nozzle. The transducer may be operable to detect a pressure difference between the first pressure sensor and the second pressure sensor.

Integrated luminescent chemical microsensors based on GaN LEDs for security applications using smartphones

NASA Astrophysics Data System (ADS)

Orellana, Guillermo; Muñoz, Elias; Gil-Herrera, Luz K.; Muñoz, Pablo; Lopez-Gejo, Juan; Palacio, Carlos

2012-09-01

Development of PCB-integrateable microsensors for monitoring chemical species is a goal in areas such as lab-on-a-chip analytical devices, diagnostics medicine and electronics for hand-held instruments where the device size is a major issue. Cellular phones have pervaded the world inhabitants and their usefulness has dramatically increased with the introduction of smartphones due to a combination of amazing processing power in a confined space, geolocalization and manifold telecommunication features. Therefore, a number of physical and chemical sensors that add value to the terminal for health monitoring, personal safety (at home, at work) and, eventually, national security have started to be developed, capitalizing also on the huge number of circulating cell phones. The chemical sensor-enabled "super" smartphone provides a unique (bio)sensing platform for monitoring airborne or waterborne hazardous chemicals or microorganisms for both single user and crowdsourcing security applications. Some of the latest ones are illustrated by a few examples. Moreover, we have recently achieved for the first time (covalent) functionalization of p- and n-GaN semiconductor surfaces with tuneable luminescent indicator dyes of the Ru-polypyridyl family, as a key step in the development of innovative microsensors for smartphone applications. Chemical "sensoring" of GaN-based blue LED chips with those indicators has also been achieved by plasma treatment of their surface, and the micrometer-sized devices have been tested to monitor O2 in the gas phase to show their full functionality. Novel strategies to enhance the sensor sensitivity such as changing the length and nature of the siloxane buffer layer are discussed in this paper.

One-Dimensional Oxide Nanostructures as Gas-Sensing Materials: Review and Issues

PubMed Central

Choi, Kyoung Jin; Jang, Ho Won

2010-01-01

In this article, we review gas sensor application of one-dimensional (1D) metal-oxide nanostructures with major emphases on the types of device structure and issues for realizing practical sensors. One of the most important steps in fabricating 1D-nanostructure devices is manipulation and making electrical contacts of the nanostructures. Gas sensors based on individual 1D nanostructure, which were usually fabricated using electron-beam lithography, have been a platform technology for fundamental research. Recently, gas sensors with practical applicability were proposed, which were fabricated with an array of 1D nanostructures using scalable micro-fabrication tools. In the second part of the paper, some critical issues are pointed out including long-term stability, gas selectivity, and room-temperature operation of 1D-nanostructure-based metal-oxide gas sensors. PMID:22319343

Synthesis and Characterization of CuO Nanodisks for High-Sensitive and Selective Ethanol Gas Sensor Applications.

PubMed

Umar, Ahmad; Lee, Jong-Heun; Kumar, Rajesh; Al-Dossary, O

2017-02-01

Herein, the fabrication and characterization of highly sensitive and selective ethanol gas sensor based on CuO nanodisks is reported. The CuO nanodisks were synthesized by facile hydrothermal process and detailed characterization revealed the well-crystallinity, high-purity and high density growth of the prepared material. To fabricate the ethanol gas sensor, the prepared nanodisks were coated on alumina substrate. The fabricated sensor exhibited high-sensitivity and the recorded gas response (resistance-ratio), response time (τ res) and recovery time (τ recov) were 6.2, 119 and 35 s, respectively for 100 ppm of C₂H₅OH at 300 °C. Further, the fabricated sensor shows high selectivity towards ethanol gas compared to H₂ and CO gases.

Electrochemical sensors applied to pollution monitoring: Measurement error and gas ratio bias - A volcano plume case study

NASA Astrophysics Data System (ADS)

Roberts, T. J.; Saffell, J. R.; Oppenheimer, C.; Lurton, T.

2014-06-01

There is an increasing scientific interest in the use of miniature electrochemical sensors to detect and quantify atmospheric trace gases. This has led to the development of ‘Multi-Gas' systems applied to measurements of both volcanic gas emissions, and urban air pollution. However, such measurements are subject to uncertainties introduced by sensor response time, a critical issue that has received limited attention to date. Here, a detailed analysis of output from an electrochemical SO2 sensor and two H2S sensors (contrasting in their time responses and cross-sensitivities) demonstrates how instrument errors arise under the conditions of rapidly fluctuating (by dilution) gas abundances, leading to scatter and importantly bias in the reported gas ratios. In a case study at Miyakejima volcano (Japan), electrochemical sensors were deployed at both the crater-rim and downwind locations, thereby exposed to rapidly fluctuating and smoothly varying plume gas concentrations, respectively. Discrepancies in the H2S/SO2 gas mixing ratios derived from these measurements are attributed to the sensors' differing time responses to SO2 and H2S under fluctuating plume conditions, with errors magnified by the need to correct for SO2 interference in the H2S readings. Development of a sensor response model that reproduces sensor t90 behaviour (the time required to reach 90% of the final signal following a step change in gas abundance) during calibration enabled this measurement error to be simulated numerically. The sensor response times were characterised as SO2 sensor (t90 ~ 13 s), H2S sensor without interference (t90 ~ 11 s), and H2S sensor with interference (t90 ~ 20 s to H2S and ~ 32 s to SO2). We show that a method involving data integration between periods of episodic plume exposure identifiable in the sensor output yields a less biased H2S/SO2 ratio estimate than that derived from standard analysis approaches. For the Miyakejima crater-rim dataset this method yields highly correlated H2S and SO2 abundances (R2 > 0.99) and the improved crater-rim data analysis combined with downwind measurements yields H2S/SO2 = 0.11 ± 0.01. Our analysis has significant implications for the reliance that can be placed on ‘Multi-Gas'-derived gas ratios, whether for volcanological or other purposes, in the absence of consideration of the complexities of sensor response times.

Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

PubMed

Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

2006-01-01

Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

Volcanic Plume Measurements with UAV (Invited)

NASA Astrophysics Data System (ADS)

Shinohara, H.; Kaneko, T.; Ohminato, T.

2013-12-01

Volatiles in magmas are the driving force of volcanic eruptions and quantification of volcanic gas flux and composition is important for the volcano monitoring. Recently we developed a portable gas sensor system (Multi-GAS) to quantify the volcanic gas composition by measuring volcanic plumes and obtained volcanic gas compositions of actively degassing volcanoes. As the Multi-GAS measures variation of volcanic gas component concentrations in the pumped air (volcanic plume), we need to bring the apparatus into the volcanic plume. Commonly the observer brings the apparatus to the summit crater by himself but such measurements are not possible under conditions of high risk of volcanic eruption or difficulty to approach the summit due to topography etc. In order to overcome these difficulties, volcanic plume measurements were performed by using manned and unmanned aerial vehicles. The volcanic plume measurements by manned aerial vehicles, however, are also not possible under high risk of eruption. The strict regulation against the modification of the aircraft, such as installing sampling pipes, also causes difficulty due to the high cost. Application of the UAVs for the volcanic plume measurements has a big advantage to avoid these problems. The Multi-GAS consists of IR-CO2 and H2O gas analyzer, SO2-H2O chemical sensors and H2 semiconductor sensor and the total weight ranges 3-6 kg including batteries. The necessary conditions of the UAV for the volcanic plumes measurements with the Multi-GAS are the payloads larger than 3 kg, maximum altitude larger than the plume height and installation of the sampling pipe without contamination of the exhaust gases, as the exhaust gases contain high concentrations of H2, SO2 and CO2. Up to now, three different types of UAVs were applied for the measurements; Kite-plane (Sky Remote) at Miyakejima operated by JMA, Unmanned airplane (Air Photo Service) at Shinomoedake, Kirishima volcano, and Unmanned helicopter (Yamaha) at Sakurajima volcano operated by ERI, Tokyo University. In all cases, we could estimated volcanic gas compositions, such as CO2/SO2 ratios, but also found out that it is necessary to improve the techniques to avoid the contamination of the exhaust gases and to approach more concentrated part of the plume. It was also revealed that the aerial measurements have an advantage of the stable background. The error of the volcanic gas composition estimates are largely due to the large fluctuation of the atmospheric H2O and CO2 concentrations near the ground. The stable atmospheric background obtained by the UAV measurements enables accurate estimate of the volcanic gas compositions. One of the most successful measurements was that on May 18, 2011 at Shinomoedake, Kirishima volcano during repeating Vulcanian eruption stage. The major component composition was obtained as H2O=97, CO2=1.5, SO2=0.2, H2S=0.24, H2=0.006 mol%; the high CO2 contents suggests relatively deep source of the magma degassing and the apparent equilibrium temperature obtained as 400°C indicates that the gas was cooled during ascent to the surface. The volcanic plume measurement with UAV will become an important tool for the volcano monitoring that provides important information to understand eruption processes.

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

NASA Astrophysics Data System (ADS)

Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

2013-04-01

A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

Fabrication and characterization of SnO2/ZnO gas sensors for detecting toluene gas.

PubMed

Min, Byung-Sam; Park, Young-Ho; Lee, Chang-Seop

2014-11-01

This study investigates the use of SnO2, ZnO, Ag, Au, Cu, In, Pd, Ru and carbon black to improve the sensitivity of a gas sensor for detecting toluene gas. Metal-SnO2/ZnO thick films were screen-printed onto Al2O3 substrates with platinum electrodes. The physico-chemical properties of the sensor materials were characterized using SEM/EDS, XRD, and BET analyses. Measuring the electrical resistance of each sensor as a function of the gas concentration determined the sensing characteristics. The sensors were tested using toluene, benzene, xylene, ethanol, methanol, ammonia and trimethylamine vapors with concentrations of 1-2000 ppm. The gas sensing properties of metal-SnO2/ZnO thick films depended on the content and variety of metals and the content of carbon black. The optimum condition of sensor material for toluene gas detection is operation temperature 300 degrees C and when metal catalyst Cu and carbon black were added. The best sensitivity and selectivity for toluene gas at 300 degrees C resulted from doping with 5 wt.% carbon black, 1 wt.% Cu and 20 wt.% ZnO to SnO2.

Optical sensor array platform based on polymer electronic devices

NASA Astrophysics Data System (ADS)

Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

2007-10-01

Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

High resolution gas volume change sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dirckx, Joris J. J.; Aernouts, Jef E. F.; Aerts, Johan R. M.

2007-05-15

Changes of gas quantity in a system can be measured either by measuring pressure changes or by measuring volume changes. As sensitive pressure sensors are readily available, pressure change is the commonly used technique. In many physiologic systems, however, buildup of pressure influences the gas exchange mechanisms, thus changing the gas quantity change rate. If one wants to study the gas flow in or out of a biological gas pocket, measurements need to be done at constant pressure. In this article we present a highly sensitive sensor for quantitative measurements of gas volume change at constant pressure. The sensor ismore » based on optical detection of the movement of a droplet of fluid enclosed in a capillary. The device is easy to use and delivers gas volume data at a rate of more than 15 measurements/s and a resolution better than 0.06 {mu}l. At the onset of a gas quantity change the sensor shows a small pressure artifact of less than 15 Pa, and at constant change rates the pressure artifact is smaller than 10 Pa or 0.01% of ambient pressure.« less

NASA Tech Briefs, September 2000. Volume 24, No. 9

NASA Technical Reports Server (NTRS)

2000-01-01

Topics include: Sensors; Test and Measurement; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Bio-Medical; semiconductors/ICs; Books and Reports.

Near-infrared fluorescence goggle system with complementary metal–oxide–semiconductor imaging sensor and see-through display

PubMed Central

Liu, Yang; Njuguna, Raphael; Matthews, Thomas; Akers, Walter J.; Sudlow, Gail P.; Mondal, Suman; Tang, Rui

2013-01-01

Abstract. We have developed a near-infrared (NIR) fluorescence goggle system based on the complementary metal–oxide–semiconductor active pixel sensor imaging and see-through display technologies. The fluorescence goggle system is a compact wearable intraoperative fluorescence imaging and display system that can guide surgery in real time. The goggle is capable of detecting fluorescence of indocyanine green solution in the picomolar range. Aided by NIR quantum dots, we successfully used the fluorescence goggle to guide sentinel lymph node mapping in a rat model. We further demonstrated the feasibility of using the fluorescence goggle in guiding surgical resection of breast cancer metastases in the liver in conjunction with NIR fluorescent probes. These results illustrate the diverse potential use of the goggle system in surgical procedures. PMID:23728180

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.

PubMed

Wan, Zhong; Kazakov, Aleksandr; Manfra, Michael J; Pfeiffer, Loren N; West, Ken W; Rokhinson, Leonid P

2015-06-11

Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.

Methods for improved growth of group III nitride semiconductor compounds

DOEpatents

Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

2015-03-17

Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

A Little Sensor That Packs a Wallop

NASA Technical Reports Server (NTRS)

2000-01-01

A gas sensor originally built for NASA to measure the composition of the atmosphere of Earth and Mars has been commercialized by SpectraSensors. The commercial tunable diode laser (TDL) gas sensor can be used for oil and gas pipeline monitoring, aircraft safety, environmental monitoring and medicine. The TDL technology is good at detecting low levels of gases from parts-per-million to parts-per-billion.

Facial development of high performance room temperature NO2 gas sensors based on ZnO nanowalls decorated rGO nanosheets

NASA Astrophysics Data System (ADS)

Liu, Zongyuan; Yu, Lingmin; Guo, Fen; Liu, Sheng; Qi, Lijun; Shan, Minyu; Fan, Xinhui

2017-11-01

A highly sensitive NO2 gas sensor based on ZnO nanowalls decorated rGO nanosheets was fabricated using a thermal reduction and soft solution process. The highly developed interconnected microporous networks of ZnO nanowalls were anchored homogeneously on the surface of reduced graphene oxide (rGO). Sensors fabricated with heterojunction structures achieved a higher response (S = 9.61) and shorter response-recovery (25 s, 15 s) behavior at room temperature to 50 ppm level NO2 effectively in contrast to those sensors based on net ZnO nanowalls or rGO layers. The stability and selectivity of ZnO/rGO heterojunction were carried out. Meanwhile, the effects of humidity on ZnO/rGO heterojunction gas sensor were investigated. The more preferable sensing performance of ZnO/rGO heterojunction to NO2 was discussed. It can be surmised that this NO2 gas sensor has potential for use as a portable room temperature gas sensor.

A semiconductor bridge ignited hot gas piston ejector

NASA Technical Reports Server (NTRS)

Grubelich, M. C.; Bickes, Robert W., Jr.

1993-01-01

The topics are presented in viewgraph form and include the following: semiconductor bridge technology (SCB); SCB philosophy; technology transfer; simplified sketch of SCB; SCB processing; SCB design; SCB test assembly; 5 mJ SCB burst based on a polaroid photograph; micro-convective heat transfer hypothesis; SCB fire set; comparison of SCB and hot-wire actuators; satellite firing sets; logic fire set; SCB smart component; SCB smart firing set; semiconductor design considerations; and the adjustable actuator system.

Multiparametric methane sensor for environmental monitoring

NASA Astrophysics Data System (ADS)

Borecki, M.; Duk, M.; Kociubiński, A.; Korwin-Pawlowski, M. L.

2016-12-01

Today, methane sensors find applications mostly in safety alarm installations, gas parameters detection and air pollution classification. Such sensors and sensors elements exists for industry and home use. Under development area of methane sensors application is dedicated to ground gases monitoring. Proper monitoring of soil gases requires reliable and maintenance-free semi-constant and longtime examination at relatively low cost of equipment. The sensors for soil monitoring have to work on soil probe. Therefore, sensor is exposed to environment conditions, as a wide range of temperatures and a full scale of humidity changes, as well as rain, snow and wind, that are not specified for classical methane sensors. Development of such sensor is presented in this paper. The presented sensor construction consists of five commercial non dispersive infra-red (NDIR) methane sensing units, a set of temperature and humidity sensing units, a gas chamber equipped with a micro-fan, automated gas valves and also a microcontroller that controls the measuring procedure. The electronics part of sensor was installed into customized 3D printed housing equipped with self-developed gas valves. The main development of proposed sensor is on the side of experimental evaluation of construction reliability and results of data processing included safety procedures and function for hardware error correction. Redundant methane sensor units are used providing measurement error correction as well as improved measurement accuracy. The humidity and temperature sensors are used for internal compensation of methane measurements as well as for cutting-off the sensor from the environment when the conditions exceed allowable parameters. Results obtained during environment sensing prove that the gas concentration readings are not sensitive to gas chamber vertical or horizontal position. It is important as vertical sensor installation on soil probe is simpler that horizontal one. Data acquired during six month of environment monitoring prove that error correction of methane sensing units was essential for maintenance free sensor operation, despite used safety procedures.

Gold-carbon composite thin films for electrochemical gas sensor prepared by reactive plasma sputtering

NASA Astrophysics Data System (ADS)

Okamoto, A.; Suzuki, Y.; Yoshitake, M.; Ogawa, S.; Nakano, N.

1997-01-01

We have investigated the properties of gold-carbon composite thin films prepared by a plasma sputtering deposition using argon and methane mixture gas. These composite films have an uneven surface in submicron scale or consist of nano-scale particles of gold polycrystalline. Such morphological properties can be controlled by the sputtering voltage and the partial pressure of methane gas. The working electrode of electrochemical gas sensor has needed a stable gas sensitivity and a good gas selectivity. Our composite film is one of the excellent candidates for a thin film working electrode of electrochemical gas sensor. It is described that the output current of sensor is related to the preparation conditions of the thin films and increase linearly as the concentration of PH 3 gas ranging from 0.1 to 1.0 ppm is increasing.

30 CFR 7.103 - Safety system control test.

Code of Federal Regulations, 2011 CFR

2011-07-01

... the temperature sensor in the exhaust gas stream which will automatically activate the safety shutdown... control that might interfere with the evaluation of the operation of the exhaust gas temperature sensor... allowable low water level. Run the engine until the exhaust gas temperature sensor activates the safety...

30 CFR 7.103 - Safety system control test.

Code of Federal Regulations, 2010 CFR

2010-07-01

... the temperature sensor in the exhaust gas stream which will automatically activate the safety shutdown... control that might interfere with the evaluation of the operation of the exhaust gas temperature sensor... allowable low water level. Run the engine until the exhaust gas temperature sensor activates the safety...

Rapid Measurement of Room Temperature Ionic Liquid Electrochemical Gas Sensor using Transient Double Potential Amperometry

PubMed Central

Wan, Hao; Yin, Heyu; Mason, Andrew J.

2016-01-01

Intense study on gas sensors has been conducted to implement fast gas sensing with high sensitivity, reliability and long lifetime. This paper presents a rapid amperometric method for gas sensing based on a room temperature ionic liquid electrochemical gas sensor. To implement a miniaturized sensor with a fast response time, a three electrode system with gold interdigitated electrodes was fabricated by photolithography on a porous polytetrafluoroethylene substrate that greatly enhances gas diffusion. Furthermore, based on the reversible reaction of oxygen, a new transient double potential amperometry (DPA) was explored for electrochemical analysis to decrease the measurement time and reverse reaction by-products that could cause current drift. Parameters in transient DPA including oxidation potential, oxidation period, reduction period and sample point were investigated to study their influence on the performance of the sensor. Oxygen measurement could be accomplished in 4 s, and the sensor presented a sensitivity of 0.2863 μA/[%O2] and a linearity of 0.9943 when tested in air samples with different oxygen concentrations. Repeatability and long-term stability were also investigated, and the sensor was shown to exhibit good reliability. In comparison to conventional constant potential amperometry, transient DPA was shown to reduce relative standard deviation by 63.2%. With transient DPA, the sensitivity, linearity, repeatability, measurement time and current drift characteristics demonstrated by the presented gas sensor are promising for acute exposure applications. PMID:28603384

Rapid Measurement of Room Temperature Ionic Liquid Electrochemical Gas Sensor using Transient Double Potential Amperometry.

PubMed

Wan, Hao; Yin, Heyu; Mason, Andrew J

2017-04-01

Intense study on gas sensors has been conducted to implement fast gas sensing with high sensitivity, reliability and long lifetime. This paper presents a rapid amperometric method for gas sensing based on a room temperature ionic liquid electrochemical gas sensor. To implement a miniaturized sensor with a fast response time, a three electrode system with gold interdigitated electrodes was fabricated by photolithography on a porous polytetrafluoroethylene substrate that greatly enhances gas diffusion. Furthermore, based on the reversible reaction of oxygen, a new transient double potential amperometry (DPA) was explored for electrochemical analysis to decrease the measurement time and reverse reaction by-products that could cause current drift. Parameters in transient DPA including oxidation potential, oxidation period, reduction period and sample point were investigated to study their influence on the performance of the sensor. Oxygen measurement could be accomplished in 4 s, and the sensor presented a sensitivity of 0.2863 μA/[%O 2 ] and a linearity of 0.9943 when tested in air samples with different oxygen concentrations. Repeatability and long-term stability were also investigated, and the sensor was shown to exhibit good reliability. In comparison to conventional constant potential amperometry, transient DPA was shown to reduce relative standard deviation by 63.2%. With transient DPA, the sensitivity, linearity, repeatability, measurement time and current drift characteristics demonstrated by the presented gas sensor are promising for acute exposure applications.

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications.

PubMed

Ayari, Taha; Bishop, Chris; Jordan, Matthew B; Sundaram, Suresh; Li, Xin; Alam, Saiful; ElGmili, Youssef; Patriarche, Gilles; Voss, Paul L; Salvestrini, Jean Paul; Ougazzaden, Abdallah

2017-11-09

The transfer of GaN based gas sensors to foreign substrates provides a pathway to enhance sensor performance, lower the cost and extend the applications to wearable, mobile or disposable systems. The main keys to unlocking this pathway is to grow and fabricate the sensors on large h-BN surface and to transfer them to the flexible substrate without any degradation of the performances. In this work, we develop a new generation of AlGaN/GaN gas sensors with boosted performances on a low cost flexible substrate. We fabricate 2-inch wafer scale AlGaN/GaN gas sensors on sacrificial two-dimensional (2D) nano-layered h-BN without any delamination or cracks and subsequently transfer sensors to an acrylic surface on metallic foil. This technique results in a modification of relevant device properties, leading to a doubling of the sensitivity to NO 2 gas and a response time that is more than 6 times faster than before transfer. This new approach for GaN-based sensor design opens new avenues for sensor improvement via transfer to more suitable substrates, and is promising for next-generation wearable and portable opto-electronic devices.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications

PubMed Central

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-01-01

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors’ architecture on the basis of the type of electric measurement or imaging functionalities. PMID:28879978

Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

NASA Astrophysics Data System (ADS)

Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

2017-10-01

Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ˜50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor.

PubMed

Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

2017-10-27

Few-layer MoS 2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS 2 /Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS 2 /SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS 2 -based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ∼50% RH), with good repeatability and selectivity of the MoS 2 /SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS 2 /SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

Absolute and relative emissions analysis in practical combustion systems—effect of water vapor condensation

NASA Astrophysics Data System (ADS)

Richter, J. P.; Mollendorf, J. C.; DesJardin, P. E.

2016-11-01

Accurate knowledge of the absolute combustion gas composition is necessary in the automotive, aircraft, processing, heating and air conditioning industries where emissions reduction is a major concern. Those industries use a variety of sensor technologies. Many of these sensors are used to analyze the gas by pumping a sample through a system of tubes to reach a remote sensor location. An inherent characteristic with this type of sampling strategy is that the mixture state changes as the sample is drawn towards the sensor. Specifically, temperature and humidity changes can be significant, resulting in a very different gas mixture at the sensor interface compared with the in situ location (water vapor dilution effect). Consequently, the gas concentrations obtained from remotely sampled gas analyzers can be significantly different than in situ values. In this study, inherent errors associated with sampled combustion gas concentration measurements are explored, and a correction methodology is presented to determine the absolute gas composition from remotely measured gas species concentrations. For in situ (wet) measurements a heated zirconium dioxide (ZrO2) oxygen sensor (Bosch LSU 4.9) is used to measure the absolute oxygen concentration. This is used to correct the remotely sampled (dry) measurements taken with an electrochemical sensor within the remote analyzer (Testo 330-2LL). In this study, such a correction is experimentally validated for a specified concentration of carbon monoxide (5020 ppmv).

Mechanically induced strong red emission in samarium ions doped piezoelectric semiconductor CaZnOS for dynamic pressure sensing and imaging

NASA Astrophysics Data System (ADS)

Wang, Wei; Peng, Dengfeng; Zhang, Hanlu; Yang, Xiaohong; Pan, Caofeng

2017-07-01

Piezoelectric semiconductor with optical, electrical and mechanical multifunctions has great potential applications in future optoelectronic devices. The rich properties and applications mainly encompass the intrinsic structures and their coupling effects. Here, we report that lanthanide ions doped piezoelectric semiconductor CaZnOS:Sm3+ showing strong red emission induced by dynamic mechanical stress. Under moderate mechanical load, the doped piezoelectric semiconductor exhibits strong visible red emission to the naked eyes even under the day light. A flexible dynamic pressure sensor device is fabricated based on the prepared CaZnOS:Sm3+ powders. The mechanical-induced emission properties of the device are investigated by the optical fiber spectrometer. The linear characteristic emissions are attributed to the 4G5/2→6H5/2 (566 nm), 4G5/2→6H7/2 (580-632 nm), 4G5/2→6H9/2 (653-673 nm) and 4G5/2→6H11/2 (712-735 nm) f-f transitions of Sm3+ ions. The integral emission intensity is proportional to the value of applied pressure. By using the linear relationship between integrated emission intensity and the dynamic pressure, the real-time pressure distribution is visualized and recorded. Our results highlight that the incorporation of lanthanide luminescent ions into piezoelectric semiconductors as smart materials could be applied into the flexible mechanical-optical sensor device without additional auxiliary power, which has great potential for promising applications such as mapping of personalized handwriting, smart display, and human machine interface.

A physicochemical mechanism of chemical gas sensors using an AC analysis.

PubMed

Moon, Jaehyun; Park, Jin-Ah; Lee, Su-Jae; Lee, Jeong-Ik; Zyung, Taehyong; Shin, Eui-Chol; Lee, Jong-Sook

2013-06-21

Electrical modeling of the chemical gas sensors was successfully applied to TiO2 nanofiber gas sensors by developing an equivalent circuit model where the junction capacitance as well as the resistance can be separated from the comparable stray capacitance. The Schottky junction impedance exhibited a characteristic skewed arc described by a Cole-Davidson function, and the variation of the fit and derived parameters with temperature, bias, and NO2 gas concentration indicated definitely a physicochemical sensing mechanism based on the Pt|TiO2 Schottky junctions against the conventional supposition of the enhanced sensitivity in nanostructured gas sensors with high grain boundary/surface area. Analysis on a model Pt|TiO2|Pt structure also confirmed the characteristic impedance response of TiO2 nanofiber sensors.

30 CFR 7.97 - Application requirements.

Code of Federal Regulations, 2011 CFR

2011-07-01

... internal parts, exhaust inlet and outlet, sensors, and the exhaust gas path through the exhaust conditioner... temperature sensor setting and exhaust gas temperature sensor setting used to meet the performance... sensors, flame arresters, exhaust conditioner, emergency intake air shutoff device, automatic fuel shutoff...

30 CFR 7.97 - Application requirements.

Code of Federal Regulations, 2010 CFR

2010-07-01

... internal parts, exhaust inlet and outlet, sensors, and the exhaust gas path through the exhaust conditioner... temperature sensor setting and exhaust gas temperature sensor setting used to meet the performance... sensors, flame arresters, exhaust conditioner, emergency intake air shutoff device, automatic fuel shutoff...

High density ozone monitoring using gas sensitive semi-conductor sensors in the Lower Fraser Valley, British Columbia.

PubMed

Bart, Mark; Williams, David E; Ainslie, Bruce; McKendry, Ian; Salmond, Jennifer; Grange, Stuart K; Alavi-Shoshtari, Maryam; Steyn, Douw; Henshaw, Geoff S

2014-04-01

A cost-efficient technology for accurate surface ozone monitoring using gas-sensitive semiconducting oxide (GSS) technology, solar power, and automated cell-phone communications was deployed and validated in a 50 sensor test-bed in the Lower Fraser Valley of British Columbia, over 3 months from May-September 2012. Before field deployment, the entire set of instruments was colocated with reference instruments for at least 48 h, comparing hourly averaged data. The standard error of estimate over a typical range 0-50 ppb for the set was 3 ± 2 ppb. Long-term accuracy was assessed over several months by colocation of a subset of ten instruments each at a different reference site. The differences (GSS-reference) of hourly average ozone concentration were normally distributed with mean -1 ppb and standard deviation 6 ppb (6000 measurement pairs). Instrument failures in the field were detected using network correlations and consistency checks on the raw sensor resistance data. Comparisons with modeled spatial O3 fields demonstrate the enhanced monitoring capability of a network that was a hybrid of low-cost and reference instruments, in which GSS sensors are used both to increase station density within a network as well as to extend monitoring into remote areas. This ambitious deployment exposed a number of challenges and lessons, including the logistical effort required to deploy and maintain sites over a summer period, and deficiencies in cell phone communications and battery life. Instrument failures at remote sites suggested that redundancy should be built into the network (especially at critical sites) as well as the possible addition of a "sleep-mode" for GSS monitors. At the network design phase, a more objective approach to optimize interstation distances, and the "information" content of the network is recommended. This study has demonstrated the utility and affordability of the GSS technology for a variety of applications, and the effectiveness of this technology as a means substantially and economically to extend the coverage of an air quality monitoring network. Low-cost, neighborhood-scale networks that produce reliable data can be envisaged.

System and method for detecting gas

DOEpatents

Chow, Oscar Ken; Moulthrop, Lawrence Clinton; Dreier, Ken Wayne; Miller, Jacob Andrew

2010-03-16

A system to detect a presence of a specific gas in a mixture of gaseous byproducts comprising moisture vapor is disclosed. The system includes an electrochemical cell, a transport to deliver the mixture of gaseous byproducts from the electrochemical cell, a gas sensor in fluid communication with the transport, the sensor responsive to a presence of the specific gas to generate a signal corresponding to a concentration of the specific gas, and a membrane to prevent transmission of liquid moisture, the membrane disposed between the transport and the gas sensor.

Inhibition of tafel kinetics for electrolytic hydrogen evolution on isolated micron scale electrocatalysts on semiconductor interfaces

DOE PAGES

Coridan, Robert H.; Schichtl, Zebulon G.; Sun, Tao; ...

2016-08-30

Semiconductor-liquid junctions are ubiquitous in photoelectrochemical approaches for solar-to-fuels energy conversion. Electrocatalysts are added to the interface to improve catalytic efficiency, but they can also impair the photovoltage-generating energetics of the electrode without appropriate microscopic organization of catalytically active area on the surface. This balance is more complicated when gas products are evolved, like hydrogen on water splitting electrodes. Discrete catalysts can be blocked by the gas liquid-solid boundary of a bubble stuck to the surface. Here, we study the kinetics of hydrogen evolution on semiconductor electrodes fabricated with an isolated, micronscale platinum electrocatalyst pad. Movies of in operando bubblemore » evolution were recorded with synchrotron-based high-speed x-ray phase-contrast imaging in a compatible electrochemical cell. The self-limited growth of a bubble residing on the isolated electrocatalyst was measured by tracking the evolution of the gas-liquid boundary through the sequence of images in the movie. As a result, the effect of pad size on the catalytic currents and the issues with reactant transport can be inferred from these dynamics.« less

Inhibition of tafel kinetics for electrolytic hydrogen evolution on isolated micron scale electrocatalysts on semiconductor interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coridan, Robert H.; Schichtl, Zebulon G.; Sun, Tao

Semiconductor-liquid junctions are ubiquitous in photoelectrochemical approaches for solar-to-fuels energy conversion. Electrocatalysts are added to the interface to improve catalytic efficiency, but they can also impair the photovoltage-generating energetics of the electrode without appropriate microscopic organization of catalytically active area on the surface. This balance is more complicated when gas products are evolved, like hydrogen on water splitting electrodes. Discrete catalysts can be blocked by the gas liquid-solid boundary of a bubble stuck to the surface. Here, we study the kinetics of hydrogen evolution on semiconductor electrodes fabricated with an isolated, micronscale platinum electrocatalyst pad. Movies of in operando bubblemore » evolution were recorded with synchrotron-based high-speed x-ray phase-contrast imaging in a compatible electrochemical cell. The self-limited growth of a bubble residing on the isolated electrocatalyst was measured by tracking the evolution of the gas-liquid boundary through the sequence of images in the movie. As a result, the effect of pad size on the catalytic currents and the issues with reactant transport can be inferred from these dynamics.« less

Volatile organic compounds discrimination based on dual mode detection

NASA Astrophysics Data System (ADS)

Yu, Yuanyuan; Wu, Enxiu; Chen, Yan; Feng, Zhihong; Zheng, Shijun; Zhang, Hao; Pang, Wei; Liu, Jing; Zhang, Daihua

2018-06-01

We report on a volatile organic compound (VOC) sensor that can provide concentration-independent signals toward target gases. The device is based on a dual-mode detection mechanism that can simultaneously record the mechanical (resonant frequency, f r) and electrical (current, I) responses of the same gas adsorption event. The two independent signals form a unique I–f r trace for each target VOC as the concentration varies. The mechanical response (frequency shift, Δf r) resulting from mass load on the device is directly related to the amount of surface adsorptions, while the electrical response (current variation, ΔI) is associated with charge transfer across the sensing interface and changes in carrier mobility. The two responses resulting from independent physical processes reflect intrinsic physical properties of each target gas. The ΔI–Δf r trace combined with the concentration dependent frequency (or current) signals can therefore be used to achieve target both recognition and quantification. The dual-mode device is designed and fabricated using standard complementary metal oxide semiconductor (CMOS) compatible processes. It exhibits consistent and stable performance in our tests with six different VOCs including ethanol, methanol, acetone, formaldehyde, benzene and hexane.

In2O3 nanowire based field effect transistor for biological sensors.

NASA Astrophysics Data System (ADS)

Zeng, Zhongming; Wang, Kai; Zhou, Weilie

2008-03-01

Semiconductor nanowires (NWs) are attracting considerable attention due to their nanoscale dimensions and enormous surface-to-volume ratios. Many applications have been demonstrated in toxic gas, protein, small molecule and viruses sensing because of their superior sensing performances. Indium oxide (In2O3) NWs have been successfully applied for toxic gas and small organic molecule sensing. In our experiment, In2O3 NWs based field effect transistors (FET) are fabricated for virus (Ricin) detections. Single-crystalline In2O3 NWs with diameters around 100 nm were synthesized by the thermal evaporation. The nanodevice based on In2O3 NWs bridges the source/drain electrodes with a channel length of ˜5 μm. Basic transport properties of devices were measured before biological detection. The I-V curves with the gate voltage Vg=0 shows good ohmic contact and the resistance is about 10 Mφ. The back-gate effect on the conductivity showed that In2O3 NW is working as n-type channel with obvious back-gate effect, which is much stronger than the reported results. The nanodevices used as virus detection will be also discussed.

Volatile organic compounds discrimination based on dual mode detection.

PubMed

Yu, Yuanyuan; Wu, Enxiu; Chen, Yan; Feng, Zhihong; Zheng, Shijun; Zhang, Hao; Pang, Wei; Liu, Jing; Zhang, Daihua

2018-06-15

We report on a volatile organic compound (VOC) sensor that can provide concentration-independent signals toward target gases. The device is based on a dual-mode detection mechanism that can simultaneously record the mechanical (resonant frequency, f r ) and electrical (current, I) responses of the same gas adsorption event. The two independent signals form a unique I-f r trace for each target VOC as the concentration varies. The mechanical response (frequency shift, Δf r ) resulting from mass load on the device is directly related to the amount of surface adsorptions, while the electrical response (current variation, ΔI) is associated with charge transfer across the sensing interface and changes in carrier mobility. The two responses resulting from independent physical processes reflect intrinsic physical properties of each target gas. The ΔI-Δf r trace combined with the concentration dependent frequency (or current) signals can therefore be used to achieve target both recognition and quantification. The dual-mode device is designed and fabricated using standard complementary metal oxide semiconductor (CMOS) compatible processes. It exhibits consistent and stable performance in our tests with six different VOCs including ethanol, methanol, acetone, formaldehyde, benzene and hexane.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Enhancement of methane gas sensing characteristics of graphene oxide sensor by heat treatment and laser irradiation.

PubMed

Assar, Mohammadreza; Karimzadeh, Rouhollah

2016-12-01

The present study uses a rapid, easy and practical method for cost-effective fabrication of a methane gas sensor. The sensor was made by drop-casting a graphene oxide suspension onto an interdigital circuit surface. The electrical conductivity and gas-sensing characteristics of the sensor were determined and then heat treatment and in situ laser irradiation were applied to improve the device conductivity and gas sensitivity. Real-time monitoring of the evolution of the device current as a function of heat treatment time revealed significant changes in the conductance of the graphene oxide sensor. The use of low power laser irradiation enhanced both the electrical conductivity and sensing response of the graphene oxide sensor. Copyright © 2016 Elsevier Inc. All rights reserved.

Gas sensors based on carbon nanoflake/tin oxide composites for ammonia detection.

PubMed

Lee, Soo-Keun; Chang, Daeic; Kim, Sang Wook

2014-03-15

Carbon nanoflake (CNFL) was obtained from graphite pencil by using the electrochemical method and the CNFL/SnO2 composite material assessed its potential as an ammonia gas sensor. A thin film resistive gas sensor using the composite material was manufactured by the drop casting method, and the sensor was evaluated to test in various ammonia concentrations and operating temperatures. Physical and chemical characteristics of the composite material were assessed using SEM, TEM, SAED, EDS and Raman spectroscopy. The composite material having 10% of SnO2 showed 3 times higher sensor response and better repeatability than the gas sensor using pristine SnO2 nano-particle at the optimal temperature of 350°C. Copyright © 2013 Elsevier B.V. All rights reserved.

Improvement of gas-adsorption performances of Ag-functionalized monolayer MoS2 surfaces: A first-principles study

NASA Astrophysics Data System (ADS)

Song, Jian; Lou, Huan

2018-05-01

Investigations of the adsorptions of representative gases (NO2, NH3, H2S, SO2, CO, and HCHO) on different Ag-functionalized monolayer MoS2 surfaces were performed by first principles methods. The adsorption configurations, adsorption energies, electronic structure properties, and charge transfer were calculated, and the results show that the adsorption activities to gases of monolayer MoS2 are dramatically enhanced by the Ag-modification. The Ag-modified perfect MoS2 (Ag-P) and MoS2 with S-vacancy (Ag-Vs) substrates exhibit a more superior adsorption activity to NO2 than other gases, which is consistent with the experimental reports. The charge transfer processes of different molecules adsorbed on different surfaces exhibit various characteristics, with potential benefits to gas selectivity. For instance, the NO2 and SO2 obtain more electrons from both Ag-P and Ag-Vs substrates but the NH3 and H2S donate more electrons to materials than others. In addition, the CO and HCHO possess totally opposite charge transfer directs on both substrates, respectively. The BS and PDOS calculations show that semiconductor types of gas/Ag-MoS2 systems are more determined by the metal-functionalization of material, and the directs and numbers of charge transfer process between gases and adsorbents can cause the increase or decline of material resistance theoretically, which is helpful to gas detection and distinction. The further analysis indicates suitable co-operation between the gain-lost electron ability of gas and metallicity of featuring metal might adjust the resistivity of complex and contribute to new thought for metal-functionalization. Our works provide new valuable ideas and theoretical foundation for the potential improvement of MoS2-based gas sensor performances, such as sensitivity and selectivity.

Semiconductor quantum dots as Förster resonance energy transfer donors for intracellularly-based biosensors

NASA Astrophysics Data System (ADS)

Field, Lauren D.; Walper, Scott A.; Susumu, Kimihiro; Oh, Eunkeu; Medintz, Igor L.; Delehanty, James B.

2017-02-01

Förster resonance energy transfer (FRET)-based assemblies currently comprise a significant portion of intracellularly based sensors. Although extremely useful, the fluorescent protein pairs typically utilized in such sensors are still plagued by many photophysical issues including significant direct acceptor excitation, small changes in FRET efficiency, and limited photostability. Luminescent semiconductor nanocrystals or quantum dots (QDs) are characterized by many unique optical properties including size-tunable photoluminescence, broad excitation profiles coupled to narrow emission profiles, and resistance to photobleaching, which can cumulatively overcome many of the issues associated with use of fluorescent protein FRET donors. Utilizing QDs for intracellular FRET-based sensing still requires significant development in many areas including materials optimization, bioconjugation, cellular delivery and assay design and implementation. We are currently developing several QD-based FRET sensors for various intracellular applications. These include sensors targeting intracellular proteolytic activity along with those based on theranostic nanodevices for monitoring drug release. The protease sensor is based on a unique design where an intracellularly expressed fluorescent acceptor protein substrate assembles onto a QD donor following microinjection, forming an active complex that can be monitored in live cells over time. In the theranostic configuration, the QD is conjugated to a carrier protein-drug analogue complex to visualize real-time intracellular release of the drug from its carrier in response to an external stimulus. The focus of this talk will be on the design, properties, photophysical characterization and cellular application of these sensor constructs.

The perspective of the permanent monitoring with an FBG sensor network in oil and gas production in China

NASA Astrophysics Data System (ADS)

Zhang, Yuanzhong; Xiao, Lizhi; Fu, Jianwei; Chen, Haifeng; Zhao, Xiaoliang

2005-12-01

Most of the onshore oilfields in China are in the middle and late development stages, and great deals of residual oil are waiting for exploitation. Downhole permanent sensor monitoring technology is an effective means to enhance oil and gas recovery. The concept of the downhole permanent sensor network is introduced, and the research status was reviewed. The measurement principle, application and some issues of the Distribute Temperature System (DTS) and Fiber Bragg Grating (FBG) sensor are discussed. Some potential applications of permanent monitoring with FBG sensors in oil and gas production, including enhancing oil and gas recovery and realtime monitoring of casing damaging were reviewed.

Room Temperature ppb Level Chlorine Gas Sensor Based on Copper (II) 1, 4, 8, 11, 15, 18, 22, 25-octabutoxy-29 H, 31 H-phthalocyanine Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bedi, R. K.; Saini, Rajan; Mahajan, Aman

2010-12-01

Spin coating technique has been used to fabricate room temperature chlorine gas sensor based on copper (II) 1, 4, 8, 11, 15, 18, 22, 25-octabutoxy-29 H, 31 H-phthalocyanine (CuPc(OBu){sub 8}) films. Gas sensor shows a response of 185% to few parts per billion level of Cl{sub 2} gas with response time of 9.5 minutes at room temperature. The interactions between sensor and analytes followed first order kinetics with rate constant 0.01{<=}k{<=}0.02. The chemiresistive sensor showed very good stability at room temperature over a long period of time.

Nanostructured ZnO films for potential use in LPG gas sensors

NASA Astrophysics Data System (ADS)

Latyshev, V. M.; Berestok, T. O.; Opanasyuk, A. S.; Kornyushchenko, A. S.; Perekrestov, V. I.

2017-05-01

The aim of the work was to obtain ZnO nanostructures with heightened surface area and to study relationship between formation method and gas sensor properties towards propane-butane mixture (LPG). In order to synthesize ZnO nanostructures chemical and physical formation methods have been utilized. The first one was chemical bath deposition technology and the second one magnetron sputtering of Zn followed by oxidation. Optimal method and technological parameters corresponding to formation of material with the highest sensor response have been determined experimentally. Dynamical gas sensor response at different temperature values and dependencies of the sensor sensitivity on the temperature at different LPG concentrations in air have been investigated. It has been found, that sensor response depends on the sample morphology and has the highest value for the structure consisting of thin nanowires. The factors that lead to the decrease in the gas sensor operating temperature have been determined.

Astronaut Peggy Whitson Installs SUBSA Experiment

NASA Technical Reports Server (NTRS)

2002-01-01

Expedition Five flight engineer Peggy Whitson is shown installing the Solidification Using a Baffle in Sealed Ampoules (SUBSA) experiment in the Microgravity Science Glovebox (MSG) in the Destiny laboratory aboard the International Space Station (ISS). SUBSA examines the solidification of semiconductor crystals from a melted material. Semiconductor crystals are used for many products that touch our everyday lives. They are found in computer chips, integrated circuits, and a multitude of other electronic devices, such as sensors for medical imaging equipment and detectors of nuclear radiation. Materials scientists want to make better semiconductor crystals to be able to further reduce the size of high-tech devices. In the microgravity environment, convection and sedimentation are reduced, so fluids do not remove and deform. Thus, space laboratories provide an ideal environment of studying solidification from the melt. This investigation is expected to determine the mechanism causing fluid motion during production of semiconductors in space. It will provide insight into the role of the melt motion in production of semiconductor crystals, advancing our knowledge of the crystal growth process. This could lead to a reduction of defects in semiconductor crystals produced in space and on Earth.

International Space Station (ISS)

NASA Image and Video Library

2002-07-05

Expedition Five flight engineer Peggy Whitson is shown installing the Solidification Using a Baffle in Sealed Ampoules (SUBSA) experiment in the Microgravity Science Glovebox (MSG) in the Destiny laboratory aboard the International Space Station (ISS). SUBSA examines the solidification of semiconductor crystals from a melted material. Semiconductor crystals are used for many products that touch our everyday lives. They are found in computer chips, integrated circuits, and a multitude of other electronic devices, such as sensors for medical imaging equipment and detectors of nuclear radiation. Materials scientists want to make better semiconductor crystals to be able to further reduce the size of high-tech devices. In the microgravity environment, convection and sedimentation are reduced, so fluids do not remove and deform. Thus, space laboratories provide an ideal environment of studying solidification from the melt. This investigation is expected to determine the mechanism causing fluid motion during production of semiconductors in space. It will provide insight into the role of the melt motion in production of semiconductor crystals, advancing our knowledge of the crystal growth process. This could lead to a reduction of defects in semiconductor crystals produced in space and on Earth.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

PubMed

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Measurement of toxic volatile organic compounds in indoor air of semiconductor foundries using multisorbent adsorption/thermal desorption coupled with gas chromatography-mass spectrometry.

PubMed

Wu, Chien-Hou; Lin, Ming-Nan; Feng, Chien-Tai; Yang, Kuang-Ling; Lo, Yu-Shiu; Lo, Jiunn-Guang

2003-05-09

A method for the qualitative and quantitative analysis of volatile organic compounds (VOCs) in the air of class-100 clean rooms at semiconductor fabrication facilities was developed. Air samples from two semiconductor factories were collected each hour on multisorbent tubes (including Carbopack B, Carbopack C, and Carbosieve SIII) with a 24-h automatic active sampling system and analyzed using adsorption/thermal desorption coupled with gas chromatography-mass spectrometry. Experimental parameters, including thermal desorption temperature, desorption time, and cryofocusing temperature, were optimized. The average recoveries and the method detection limits for the target compounds were in the range 94-101% and 0.31-0.89 ppb, respectively, under the conditions of a 1 L sampling volume and 80% relative humidity. VOCs such as acetone, isopropyl alcohol, 2-heptanone, and toluene, which are commonly used in the semiconductor and electronics industries, were detected and accurately quantified with the established method. Temporal variations of the analyte concentrations observed were attributed to the improper use of organic solvents during operation.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

PubMed Central

Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

2017-01-01

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

Germanium Requirements for National Defense,

DTIC Science & Technology

1991-07-01

work in this area involves development of hard exterior coating materials that will protect Ge windows but not adversely affect their optical...advanced electronic materials, is used in semiconductor devices, fiber optic systems, and infrared sensors for ships, aircraft, missiles, tanks and anti -tank...infrared sensors for ships, aircraft, missiles, tanks and anti -tank units. Because of its importance in these applications, germanium was added to the

Fault Diagnosis for Micro-Gas Turbine Engine Sensors via Wavelet Entropy

PubMed Central

Yu, Bing; Liu, Dongdong; Zhang, Tianhong

2011-01-01

Sensor fault diagnosis is necessary to ensure the normal operation of a gas turbine system. However, the existing methods require too many resources and this need can’t be satisfied in some occasions. Since the sensor readings are directly affected by sensor state, sensor fault diagnosis can be performed by extracting features of the measured signals. This paper proposes a novel fault diagnosis method for sensors based on wavelet entropy. Based on the wavelet theory, wavelet decomposition is utilized to decompose the signal in different scales. Then the instantaneous wavelet energy entropy (IWEE) and instantaneous wavelet singular entropy (IWSE) are defined based on the previous wavelet entropy theory. Subsequently, a fault diagnosis method for gas turbine sensors is proposed based on the results of a numerically simulated example. Then, experiments on this method are carried out on a real micro gas turbine engine. In the experiment, four types of faults with different magnitudes are presented. The experimental results show that the proposed method for sensor fault diagnosis is efficient. PMID:22163734

Fault diagnosis for micro-gas turbine engine sensors via wavelet entropy.

PubMed

Yu, Bing; Liu, Dongdong; Zhang, Tianhong

2011-01-01

Sensor fault diagnosis is necessary to ensure the normal operation of a gas turbine system. However, the existing methods require too many resources and this need can't be satisfied in some occasions. Since the sensor readings are directly affected by sensor state, sensor fault diagnosis can be performed by extracting features of the measured signals. This paper proposes a novel fault diagnosis method for sensors based on wavelet entropy. Based on the wavelet theory, wavelet decomposition is utilized to decompose the signal in different scales. Then the instantaneous wavelet energy entropy (IWEE) and instantaneous wavelet singular entropy (IWSE) are defined based on the previous wavelet entropy theory. Subsequently, a fault diagnosis method for gas turbine sensors is proposed based on the results of a numerically simulated example. Then, experiments on this method are carried out on a real micro gas turbine engine. In the experiment, four types of faults with different magnitudes are presented. The experimental results show that the proposed method for sensor fault diagnosis is efficient.

Biomaterial based sulphur di oxide gas sensor

NASA Astrophysics Data System (ADS)

Ghosh, P. K.; Sarkar, A.

2013-06-01

Biomaterials are getting importance in the present research field of sensors. In this present paper performance of biomaterial based gas sensor made of gum Arabica and garlic extract had been studied. Extract of garlic clove with multiple medicinal and chemical utility can be proved to be useful in sensing Sulphur di Oxide gas. On exposure to Sulphur di Oxide gas the material under observation suffers some temporary structural change, which can be observed in form of amplified potentiometric change through simple electronic circuitry. Exploiting this very property a potentiometric gas sensor of faster response and recovery time can be designed. In this work sensing property of the said material has been studied through DC conductance, FTIR spectrum etc.

Highly Efficient Gas Sensor Using a Hollow SnO2 Microfiber for Triethylamine Detection.

PubMed

Zou, Yihui; Chen, Shuai; Sun, Jin; Liu, Jingquan; Che, Yanke; Liu, Xianghong; Zhang, Jun; Yang, Dongjiang

2017-07-28

Triethylamine (TEA) gas sensors having excellent response and selectivity are in great demand to monitor the real environment. In this work, we have successfully prepared a hollow SnO 2 microfiber by a unique sustainable biomass conversion strategy and shown that the microfiber can be used in a high-performance gas sensor. The sensor based on the hollow SnO 2 microfiber shows a quick response/recovery toward triethylamine. The response of the hollow SnO 2 microfiber is up to 49.5 when the concentration of TEA gas is 100 ppm. The limit of detection is as low as 2 ppm. Furthermore, the sensor has a relatively low optimal operation temperature of 270 °C, which is lower than those of many other reported sensors. The excellent sensing properties are largely attributed to the high sensitivity provided by SnO 2 and the good permeability and conductivity of the one-dimensional hollow structure. Thus, the hollow SnO 2 microfiber using sustainable biomass as a template is a significant strategy for a unique TEA gas sensor.

Enhanced surface modification engineering (H, F, Cl, Br, and NO{sub 2}) of CdS nanowires with and without surface dangling bonds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Yijie; Xing, Huaizhong, E-mail: xinghz@dhu.edu.cn; Lu, Aijiang

2015-08-07

Semiconductor nanowires (NWs) can be applied in gas sensing and cell detection, but the sensing mechanism is not clearly understood. In this study, surface modification effect on the electronic properties of CdS NWs for different diameters with several species (H, F, Cl, Br, and NO{sub 2}) is investigated by first principles calculations. The surface dangling bonds and halogen elements are chosen to represent the environment of the surface. Halogen passivation drastically changes the band gaps due to the strong electronegativity and the energy level of halogen atoms. Density of states analysis indicates that valence band maximum (VBM) of halogen-passivated NWsmore » is formed by the p states of halogen atoms, while VBM of H-passivated NWs is originated from Cd 4d and S 3p orbitals. To illustrate that surface modification can be applied in gas sensing, NO{sub 2}-absorbed NWs with different coverage are calculated. Low coverage of NO{sub 2} introduces a deep p-type dopant-like level, while high coverage introduces a shallow n-type dopant-like level into the band structure. The transformation is due to that at low coverage the adsorption is chemical while at high coverage is physical. These findings might promote the understanding of surface modification effect and the sensing mechanism of NWs as gas sensors.« less

Developments toward a Low-Cost Approach for Long-Term, Unattended Vapor Intrusion Monitoring

PubMed Central

Tolley, William K.

2014-01-01

There are over 450,000 sites contaminated by chemicals in the US. This large number of contaminated sites and the speed of subsurface migration of chemicals pose considerable risk to nearby residences and commercial buildings. The high costs for monitoring around these site stem from the labor involved in placing and replacing the passive sorbent vapor samplers and the resultant laboratory analysis. This monitoring produces sparse data sets that do not track temporal changes well. To substantially reduce costs and better track exposures, less costly, unattended systems for monitoring soil gases and vapor intrusion into homes and businesses are desirable to aid in the remediation of contaminated sites. This paper describes progress toward the development of an inexpensive system specifically for monitoring vapor intrusion; the system can operate repeatedly without user intervention with low detection limits (1 × 10−9, or 1 part-per-billion). Targeted analytes include chlorinated hydrocarbons (dichloroethylene, trichloroethane, trichloroethylene, and perchloroethylene) and benzene. The system consists of a trap-and-purge preconcentrator for vapor collection in conjunction with a compact gas chromatography instrument to separate individual compounds. Chemical detection is accomplished with an array of chemicapacitors and a metal-oxide semiconductor combustibles sensor. Both the preconcentrator and the chromatography column are resistively heated. All components are compatible with ambient air, which serves as the carrier gas for the gas chromatography and detectors. PMID:24903107

Methods for determining optical power, for power-normalizing laser measurements, and for stabilizing power of lasers via compliance voltage sensing

DOEpatents

Taubman, Matthew S; Phillips, Mark C

2015-04-07

A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.