Integrated semiconductor optical sensors for chronic, minimally-invasive imaging of brain function.

PubMed

Lee, Thomas T; Levi, Ofer; Cang, Jianhua; Kaneko, Megumi; Stryker, Michael P; Smith, Stephen J; Shenoy, Krishna V; Harris, James S

2006-01-01

Intrinsic optical signal (IOS) imaging is a widely accepted technique for imaging brain activity. We propose an integrated device consisting of interleaved arrays of gallium arsenide (GaAs) based semiconductor light sources and detectors operating at telecommunications wavelengths in the near-infrared. Such a device will allow for long-term, minimally invasive monitoring of neural activity in freely behaving subjects, and will enable the use of structured illumination patterns to improve system performance. In this work we describe the proposed system and show that near-infrared IOS imaging at wavelengths compatible with semiconductor devices can produce physiologically significant images in mice, even through skull.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

PubMed

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-05-02

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors

PubMed Central

Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

2017-01-01

Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components. PMID:28468324

Active pixel image sensor with a winner-take-all mode of operation

NASA Technical Reports Server (NTRS)

Yadid-Pecht, Orly (Inventor); Mead, Carver (Inventor); Fossum, Eric R. (Inventor)

2003-01-01

An integrated CMOS semiconductor imaging device having two modes of operation that can be performed simultaneously to produce an output image and provide information of a brightest or darkest pixel in the image.

Multi-spectral imaging with infrared sensitive organic light emitting diode

PubMed Central

Kim, Do Young; Lai, Tzung-Han; Lee, Jae Woong; Manders, Jesse R.; So, Franky

2014-01-01

Commercially available near-infrared (IR) imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fabrication costs of these image sensors. Furthermore, these typical III-V compound semiconductors are not sensitive to the visible region and thus cannot be used for multi-spectral (visible to near-IR) sensing. Here, a low cost infrared (IR) imaging camera is demonstrated with a commercially available digital single-lens reflex (DSLR) camera and an IR sensitive organic light emitting diode (IR-OLED). With an IR-OLED, IR images at a wavelength of 1.2 µm are directly converted to visible images which are then recorded in a Si-CMOS DSLR camera. This multi-spectral imaging system is capable of capturing images at wavelengths in the near-infrared as well as visible regions. PMID:25091589

Multi-spectral imaging with infrared sensitive organic light emitting diode

NASA Astrophysics Data System (ADS)

Kim, Do Young; Lai, Tzung-Han; Lee, Jae Woong; Manders, Jesse R.; So, Franky

2014-08-01

Commercially available near-infrared (IR) imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits (ROIC) by indium bump bonding which significantly increases the fabrication costs of these image sensors. Furthermore, these typical III-V compound semiconductors are not sensitive to the visible region and thus cannot be used for multi-spectral (visible to near-IR) sensing. Here, a low cost infrared (IR) imaging camera is demonstrated with a commercially available digital single-lens reflex (DSLR) camera and an IR sensitive organic light emitting diode (IR-OLED). With an IR-OLED, IR images at a wavelength of 1.2 µm are directly converted to visible images which are then recorded in a Si-CMOS DSLR camera. This multi-spectral imaging system is capable of capturing images at wavelengths in the near-infrared as well as visible regions.

Image quality evaluation of eight complementary metal-oxide semiconductor intraoral digital X-ray sensors.

PubMed

Teich, Sorin; Al-Rawi, Wisam; Heima, Masahiro; Faddoul, Fady F; Goldzweig, Gil; Gutmacher, Zvi; Aizenbud, Dror

2016-10-01

To evaluate the image quality generated by eight commercially available intraoral sensors. Eighteen clinicians ranked the quality of a bitewing acquired from one subject using eight different intraoral sensors. Analytical methods used to evaluate clinical image quality included the Visual Grading Characteristics method, which helps to quantify subjective opinions to make them suitable for analysis. The Dexis sensor was ranked significantly better than Sirona and Carestream-Kodak sensors; and the image captured using the Carestream-Kodak sensor was ranked significantly worse than those captured using Dexis, Schick and Cyber Medical Imaging sensors. The Image Works sensor image was rated the lowest by all clinicians. Other comparisons resulted in non-significant results. None of the sensors was considered to generate images of significantly better quality than the other sensors tested. Further research should be directed towards determining the clinical significance of the differences in image quality reported in this study. © 2016 FDI World Dental Federation.

Optical and Electric Multifunctional CMOS Image Sensors for On-Chip Biosensing Applications

PubMed Central

Tokuda, Takashi; Noda, Toshihiko; Sasagawa, Kiyotaka; Ohta, Jun

2010-01-01

In this review, the concept, design, performance, and a functional demonstration of multifunctional complementary metal-oxide-semiconductor (CMOS) image sensors dedicated to on-chip biosensing applications are described. We developed a sensor architecture that allows flexible configuration of a sensing pixel array consisting of optical and electric sensing pixels, and designed multifunctional CMOS image sensors that can sense light intensity and electric potential or apply a voltage to an on-chip measurement target. We describe the sensors’ architecture on the basis of the type of electric measurement or imaging functionalities. PMID:28879978

Real time quantitative imaging for semiconductor crystal growth, control and characterization

NASA Technical Reports Server (NTRS)

Wargo, Michael J.

1991-01-01

A quantitative real time image processing system has been developed which can be software-reconfigured for semiconductor processing and characterization tasks. In thermal imager mode, 2D temperature distributions of semiconductor melt surfaces (900-1600 C) can be obtained with temperature and spatial resolutions better than 0.5 C and 0.5 mm, respectively, as demonstrated by analysis of melt surface thermal distributions. Temporal and spatial image processing techniques and multitasking computational capabilities convert such thermal imaging into a multimode sensor for crystal growth control. A second configuration of the image processing engine in conjunction with bright and dark field transmission optics is used to nonintrusively determine the microdistribution of free charge carriers and submicron sized crystalline defects in semiconductors. The IR absorption characteristics of wafers are determined with 10-micron spatial resolution and, after calibration, are converted into charge carrier density.

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

PubMed Central

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su

2014-01-01

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778

Real-time two-dimensional imaging of potassium ion distribution using an ion semiconductor sensor with charged coupled device technology.

PubMed

Hattori, Toshiaki; Masaki, Yoshitomo; Atsumi, Kazuya; Kato, Ryo; Sawada, Kazuaki

2010-01-01

Two-dimensional real-time observation of potassium ion distributions was achieved using an ion imaging device based on charge-coupled device (CCD) and metal-oxide semiconductor technologies, and an ion selective membrane. The CCD potassium ion image sensor was equipped with an array of 32 × 32 pixels (1024 pixels). It could record five frames per second with an area of 4.16 × 4.16 mm(2). Potassium ion images were produced instantly. The leaching of potassium ion from a 3.3 M KCl Ag/AgCl reference electrode was dynamically monitored in aqueous solution. The potassium ion selective membrane on the semiconductor consisted of plasticized poly(vinyl chloride) (PVC) with bis(benzo-15-crown-5). The addition of a polyhedral oligomeric silsesquioxane to the plasticized PVC membrane greatly improved adhesion of the membrane onto Si(3)N(4) of the semiconductor surface, and the potential response was stabilized. The potential response was linear from 10(-2) to 10(-5) M logarithmic concentration of potassium ion. The selectivity coefficients were K(K(+),Li(+))(pot) = 10(-2.85), K(K(+),Na(+))(pot) = 10(-2.30), K(K(+),Rb(+))(pot) =10(-1.16), and K(K(+),Cs(+))(pot) = 10(-2.05).

Real time in vivo imaging and measurement of serine protease activity in the mouse hippocampus using a dedicated complementary metal-oxide semiconductor imaging device.

PubMed

Ng, David C; Tamura, Hideki; Tokuda, Takashi; Yamamoto, Akio; Matsuo, Masamichi; Nunoshita, Masahiro; Ishikawa, Yasuyuki; Shiosaka, Sadao; Ohta, Jun

2006-09-30

The aim of the present study is to demonstrate the application of complementary metal-oxide semiconductor (CMOS) imaging technology for studying the mouse brain. By using a dedicated CMOS image sensor, we have successfully imaged and measured brain serine protease activity in vivo, in real-time, and for an extended period of time. We have developed a biofluorescence imaging device by packaging the CMOS image sensor which enabled on-chip imaging configuration. In this configuration, no optics are required whereby an excitation filter is applied onto the sensor to replace the filter cube block found in conventional fluorescence microscopes. The fully packaged device measures 350 microm thick x 2.7 mm wide, consists of an array of 176 x 144 pixels, and is small enough for measurement inside a single hemisphere of the mouse brain, while still providing sufficient imaging resolution. In the experiment, intraperitoneally injected kainic acid induced upregulation of serine protease activity in the brain. These events were captured in real time by imaging and measuring the fluorescence from a fluorogenic substrate that detected this activity. The entire device, which weighs less than 1% of the body weight of the mouse, holds promise for studying freely moving animals.

Near-infrared fluorescence goggle system with complementary metal–oxide–semiconductor imaging sensor and see-through display

PubMed Central

Liu, Yang; Njuguna, Raphael; Matthews, Thomas; Akers, Walter J.; Sudlow, Gail P.; Mondal, Suman; Tang, Rui

2013-01-01

Abstract. We have developed a near-infrared (NIR) fluorescence goggle system based on the complementary metal–oxide–semiconductor active pixel sensor imaging and see-through display technologies. The fluorescence goggle system is a compact wearable intraoperative fluorescence imaging and display system that can guide surgery in real time. The goggle is capable of detecting fluorescence of indocyanine green solution in the picomolar range. Aided by NIR quantum dots, we successfully used the fluorescence goggle to guide sentinel lymph node mapping in a rat model. We further demonstrated the feasibility of using the fluorescence goggle in guiding surgical resection of breast cancer metastases in the liver in conjunction with NIR fluorescent probes. These results illustrate the diverse potential use of the goggle system in surgical procedures. PMID:23728180

High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

PubMed

Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

2010-12-15

A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging. Copyright © 2010 Elsevier B.V. All rights reserved.

Bioinspired Polarization Imaging Sensors: From Circuits and Optics to Signal Processing Algorithms and Biomedical Applications

PubMed Central

York, Timothy; Powell, Samuel B.; Gao, Shengkui; Kahan, Lindsey; Charanya, Tauseef; Saha, Debajit; Roberts, Nicholas W.; Cronin, Thomas W.; Marshall, Justin; Achilefu, Samuel; Lake, Spencer P.; Raman, Baranidharan; Gruev, Viktor

2015-01-01

In this paper, we present recent work on bioinspired polarization imaging sensors and their applications in biomedicine. In particular, we focus on three different aspects of these sensors. First, we describe the electro–optical challenges in realizing a bioinspired polarization imager, and in particular, we provide a detailed description of a recent low-power complementary metal–oxide–semiconductor (CMOS) polarization imager. Second, we focus on signal processing algorithms tailored for this new class of bioinspired polarization imaging sensors, such as calibration and interpolation. Third, the emergence of these sensors has enabled rapid progress in characterizing polarization signals and environmental parameters in nature, as well as several biomedical areas, such as label-free optical neural recording, dynamic tissue strength analysis, and early diagnosis of flat cancerous lesions in a murine colorectal tumor model. We highlight results obtained from these three areas and discuss future applications for these sensors. PMID:26538682

Imaging detectors and electronics—a view of the future

NASA Astrophysics Data System (ADS)

Spieler, Helmuth

2004-09-01

Imaging sensors and readout electronics have made tremendous strides in the past two decades. The application of modern semiconductor fabrication techniques and the introduction of customized monolithic integrated circuits have made large-scale imaging systems routine in high-energy physics. This technology is now finding its way into other areas, such as space missions, synchrotron light sources, and medical imaging. I review current developments and discuss the promise and limits of new technologies. Several detector systems are described as examples of future trends. The discussion emphasizes semiconductor detector systems, but I also include recent developments for large-scale superconducting detector arrays.

Compressive Sensing Image Sensors-Hardware Implementation

PubMed Central

Dadkhah, Mohammadreza; Deen, M. Jamal; Shirani, Shahram

2013-01-01

The compressive sensing (CS) paradigm uses simultaneous sensing and compression to provide an efficient image acquisition technique. The main advantages of the CS method include high resolution imaging using low resolution sensor arrays and faster image acquisition. Since the imaging philosophy in CS imagers is different from conventional imaging systems, new physical structures have been developed for cameras that use the CS technique. In this paper, a review of different hardware implementations of CS encoding in optical and electrical domains is presented. Considering the recent advances in CMOS (complementary metal–oxide–semiconductor) technologies and the feasibility of performing on-chip signal processing, important practical issues in the implementation of CS in CMOS sensors are emphasized. In addition, the CS coding for video capture is discussed. PMID:23584123

Image sensor pixel with on-chip high extinction ratio polarizer based on 65-nm standard CMOS technology.

PubMed

Sasagawa, Kiyotaka; Shishido, Sanshiro; Ando, Keisuke; Matsuoka, Hitoshi; Noda, Toshihiko; Tokuda, Takashi; Kakiuchi, Kiyomi; Ohta, Jun

2013-05-06

In this study, we demonstrate a polarization sensitive pixel for a complementary metal-oxide-semiconductor (CMOS) image sensor based on 65-nm standard CMOS technology. Using such a deep-submicron CMOS technology, it is possible to design fine metal patterns smaller than the wavelengths of visible light by using a metal wire layer. We designed and fabricated a metal wire grid polarizer on a 20 × 20 μm(2) pixel for image sensor. An extinction ratio of 19.7 dB was observed at a wavelength 750 nm.

Camera-on-a-Chip

NASA Technical Reports Server (NTRS)

1999-01-01

Jet Propulsion Laboratory's research on a second generation, solid-state image sensor technology has resulted in the Complementary Metal- Oxide Semiconductor Active Pixel Sensor (CMOS), establishing an alternative to the Charged Coupled Device (CCD). Photobit Corporation, the leading supplier of CMOS image sensors, has commercialized two products of their own based on this technology: the PB-100 and PB-300. These devices are cameras on a chip, combining all camera functions. CMOS "active-pixel" digital image sensors offer several advantages over CCDs, a technology used in video and still-camera applications for 30 years. The CMOS sensors draw less energy, they use the same manufacturing platform as most microprocessors and memory chips, and they allow on-chip programming of frame size, exposure, and other parameters.

Real-time biochemical sensor based on Raman scattering with CMOS contact imaging.

PubMed

Muyun Cao; Yuhua Li; Yadid-Pecht, Orly

2015-08-01

This work presents a biochemical sensor based on Raman scattering with Complementary metal-oxide-semiconductor (CMOS) contact imaging. This biochemical optical sensor is designed for detecting the concentration of solutions. The system is built with a laser diode, an optical filter, a sample holder and a commercial CMOS sensor. The output of the system is analyzed by an image processing program. The system provides instant measurements with a resolution of 0.2 to 0.4 Mol. This low cost and easy-operated small scale system is useful in chemical, biomedical and environmental labs for quantitative bio-chemical concentration detection with results reported comparable to a highly cost commercial spectrometer.

Hardware-based image processing for high-speed inspection of grains

USDA-ARS?s Scientific Manuscript database

A high-speed, low-cost, image-based sorting device was developed to detect and separate grains with slight color differences and small defects on grains The device directly combines a complementary metal–oxide–semiconductor (CMOS) color image sensor with a field-programmable gate array (FPGA) which...

CMOS Active Pixel Sensors for Low Power, Highly Miniaturized Imaging Systems

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1996-01-01

The complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology has been developed over the past three years by NASA at the Jet Propulsion Laboratory, and has reached a level of performance comparable to CCDs with greatly increased functionality but at a very reduced power level.

CMOS image sensor-based immunodetection by refractive-index change.

PubMed

Devadhasan, Jasmine P; Kim, Sanghyo

2012-01-01

A complementary metal oxide semiconductor (CMOS) image sensor is an intriguing technology for the development of a novel biosensor. Indeed, the CMOS image sensor mechanism concerning the detection of the antigen-antibody (Ag-Ab) interaction at the nanoscale has been ambiguous so far. To understand the mechanism, more extensive research has been necessary to achieve point-of-care diagnostic devices. This research has demonstrated a CMOS image sensor-based analysis of cardiovascular disease markers, such as C-reactive protein (CRP) and troponin I, Ag-Ab interactions on indium nanoparticle (InNP) substrates by simple photon count variation. The developed sensor is feasible to detect proteins even at a fg/mL concentration under ordinary room light. Possible mechanisms, such as dielectric constant and refractive-index changes, have been studied and proposed. A dramatic change in the refractive index after protein adsorption on an InNP substrate was observed to be a predominant factor involved in CMOS image sensor-based immunoassay.

Protection performance evaluation regarding imaging sensors hardened against laser dazzling

NASA Astrophysics Data System (ADS)

Ritt, Gunnar; Koerber, Michael; Forster, Daniel; Eberle, Bernd

2015-05-01

Electro-optical imaging sensors are widely distributed and used for many different purposes, including civil security and military operations. However, laser irradiation can easily disturb their operational capability. Thus, an adequate protection mechanism for electro-optical sensors against dazzling and damaging is highly desirable. Different protection technologies exist now, but none of them satisfies the operational requirements without any constraints. In order to evaluate the performance of various laser protection measures, we present two different approaches based on triangle orientation discrimination on the one hand and structural similarity on the other hand. For both approaches, image analysis algorithms are applied to images taken of a standard test scene with triangular test patterns which is superimposed by dazzling laser light of various irradiance levels. The evaluation methods are applied to three different sensors: a standard complementary metal oxide semiconductor camera, a high dynamic range camera with a nonlinear response curve, and a sensor hardened against laser dazzling.

High-speed sorting of grains by color and surface texture

USDA-ARS?s Scientific Manuscript database

A high-speed, low-cost, image-based sorting device was developed to detect and separate grains with different colors/textures. The device directly combines a complementary metal–oxide–semiconductor (CMOS) color image sensor with a field-programmable gate array (FPGA) that was programmed to execute ...

Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Okamoto, Tamotsu; Nagao, Masayoshi; Akiyoshi, Masafumi; Sato, Nobuhiro; Takagi, Ikuji; Tsuji, Hiroshi; Gotoh, Yasuhito

2016-10-01

A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption. In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.

The Multidimensional Integrated Intelligent Imaging project (MI-3)

NASA Astrophysics Data System (ADS)

Allinson, N.; Anaxagoras, T.; Aveyard, J.; Arvanitis, C.; Bates, R.; Blue, A.; Bohndiek, S.; Cabello, J.; Chen, L.; Chen, S.; Clark, A.; Clayton, C.; Cook, E.; Cossins, A.; Crooks, J.; El-Gomati, M.; Evans, P. M.; Faruqi, W.; French, M.; Gow, J.; Greenshaw, T.; Greig, T.; Guerrini, N.; Harris, E. J.; Henderson, R.; Holland, A.; Jeyasundra, G.; Karadaglic, D.; Konstantinidis, A.; Liang, H. X.; Maini, K. M. S.; McMullen, G.; Olivo, A.; O'Shea, V.; Osmond, J.; Ott, R. J.; Prydderch, M.; Qiang, L.; Riley, G.; Royle, G.; Segneri, G.; Speller, R.; Symonds-Tayler, J. R. N.; Triger, S.; Turchetta, R.; Venanzi, C.; Wells, K.; Zha, X.; Zin, H.

2009-06-01

MI-3 is a consortium of 11 universities and research laboratories whose mission is to develop complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) and to apply these sensors to a range of imaging challenges. A range of sensors has been developed: On-Pixel Intelligent CMOS (OPIC)—designed for in-pixel intelligence; FPN—designed to develop novel techniques for reducing fixed pattern noise; HDR—designed to develop novel techniques for increasing dynamic range; Vanilla/PEAPS—with digital and analogue modes and regions of interest, which has also been back-thinned; Large Area Sensor (LAS)—a novel, stitched LAS; and eLeNA—which develops a range of low noise pixels. Applications being developed include autoradiography, a gamma camera system, radiotherapy verification, tissue diffraction imaging, X-ray phase-contrast imaging, DNA sequencing and electron microscopy.

Integrated infrared and visible image sensors

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

2000-01-01

Semiconductor imaging devices integrating an array of visible detectors and another array of infrared detectors into a single module to simultaneously detect both the visible and infrared radiation of an input image. The visible detectors and the infrared detectors may be formed either on two separate substrates or on the same substrate by interleaving visible and infrared detectors.

CMOS image sensor for detection of interferon gamma protein interaction as a point-of-care approach.

PubMed

Marimuthu, Mohana; Kandasamy, Karthikeyan; Ahn, Chang Geun; Sung, Gun Yong; Kim, Min-Gon; Kim, Sanghyo

2011-09-01

Complementary metal oxide semiconductor (CMOS)-based image sensors have received increased attention owing to the possibility of incorporating them into portable diagnostic devices. The present research examined the efficiency and sensitivity of a CMOS image sensor for the detection of antigen-antibody interactions involving interferon gamma protein without the aid of expensive instruments. The highest detection sensitivity of about 1 fg/ml primary antibody was achieved simply by a transmission mechanism. When photons are prevented from hitting the sensor surface, a reduction in digital output occurs in which the number of photons hitting the sensor surface is approximately proportional to the digital number. Nanoscale variation in substrate thickness after protein binding can be detected with high sensitivity by the CMOS image sensor. Therefore, this technique can be easily applied to smartphones or any clinical diagnostic devices for the detection of several biological entities, with high impact on the development of point-of-care applications.

CMOS image sensors as an efficient platform for glucose monitoring.

PubMed

Devadhasan, Jasmine Pramila; Kim, Sanghyo; Choi, Cheol Soo

2013-10-07

Complementary metal oxide semiconductor (CMOS) image sensors have been used previously in the analysis of biological samples. In the present study, a CMOS image sensor was used to monitor the concentration of oxidized mouse plasma glucose (86-322 mg dL(-1)) based on photon count variation. Measurement of the concentration of oxidized glucose was dependent on changes in color intensity; color intensity increased with increasing glucose concentration. The high color density of glucose highly prevented photons from passing through the polydimethylsiloxane (PDMS) chip, which suggests that the photon count was altered by color intensity. Photons were detected by a photodiode in the CMOS image sensor and converted to digital numbers by an analog to digital converter (ADC). Additionally, UV-spectral analysis and time-dependent photon analysis proved the efficiency of the detection system. This simple, effective, and consistent method for glucose measurement shows that CMOS image sensors are efficient devices for monitoring glucose in point-of-care applications.

High-resolution dynamic pressure sensor array based on piezo-phototronic effect tuned photoluminescence imaging.

PubMed

Peng, Mingzeng; Li, Zhou; Liu, Caihong; Zheng, Qiang; Shi, Xieqing; Song, Ming; Zhang, Yang; Du, Shiyu; Zhai, Junyi; Wang, Zhong Lin

2015-03-24

A high-resolution dynamic tactile/pressure display is indispensable to the comprehensive perception of force/mechanical stimulations such as electronic skin, biomechanical imaging/analysis, or personalized signatures. Here, we present a dynamic pressure sensor array based on pressure/strain tuned photoluminescence imaging without the need for electricity. Each sensor is a nanopillar that consists of InGaN/GaN multiple quantum wells. Its photoluminescence intensity can be modulated dramatically and linearly by small strain (0-0.15%) owing to the piezo-phototronic effect. The sensor array has a high pixel density of 6350 dpi and exceptional small standard deviation of photoluminescence. High-quality tactile/pressure sensing distribution can be real-time recorded by parallel photoluminescence imaging without any cross-talk. The sensor array can be inexpensively fabricated over large areas by semiconductor product lines. The proposed dynamic all-optical pressure imaging with excellent resolution, high sensitivity, good uniformity, and ultrafast response time offers a suitable way for smart sensing, micro/nano-opto-electromechanical systems.

Development of integrated semiconductor optical sensors for functional brain imaging

NASA Astrophysics Data System (ADS)

Lee, Thomas T.

Optical imaging of neural activity is a widely accepted technique for imaging brain function in the field of neuroscience research, and has been used to study the cerebral cortex in vivo for over two decades. Maps of brain activity are obtained by monitoring intensity changes in back-scattered light, called Intrinsic Optical Signals (IOS), that correspond to fluctuations in blood oxygenation and volume associated with neural activity. Current imaging systems typically employ bench-top equipment including lamps and CCD cameras to study animals using visible light. Such systems require the use of anesthetized or immobilized subjects with craniotomies, which imposes limitations on the behavioral range and duration of studies. The ultimate goal of this work is to overcome these limitations by developing a single-chip semiconductor sensor using arrays of sources and detectors operating at near-infrared (NIR) wavelengths. A single-chip implementation, combined with wireless telemetry, will eliminate the need for immobilization or anesthesia of subjects and allow in vivo studies of free behavior. NIR light offers additional advantages because it experiences less absorption in animal tissue than visible light, which allows for imaging through superficial tissues. This, in turn, reduces or eliminates the need for traumatic surgery and enables long-term brain-mapping studies in freely-behaving animals. This dissertation concentrates on key engineering challenges of implementing the sensor. This work shows the feasibility of using a GaAs-based array of vertical-cavity surface emitting lasers (VCSELs) and PIN photodiodes for IOS imaging. I begin with in-vivo studies of IOS imaging through the skull in mice, and use these results along with computer simulations to establish minimum performance requirements for light sources and detectors. I also evaluate the performance of a current commercial VCSEL for IOS imaging, and conclude with a proposed prototype sensor.

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

Toward CMOS image sensor based glucose monitoring.

PubMed

Devadhasan, Jasmine Pramila; Kim, Sanghyo

2012-09-07

Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

Onboard Image Processing System for Hyperspectral Sensor

PubMed Central

Hihara, Hiroki; Moritani, Kotaro; Inoue, Masao; Hoshi, Yoshihiro; Iwasaki, Akira; Takada, Jun; Inada, Hitomi; Suzuki, Makoto; Seki, Taeko; Ichikawa, Satoshi; Tanii, Jun

2015-01-01

Onboard image processing systems for a hyperspectral sensor have been developed in order to maximize image data transmission efficiency for large volume and high speed data downlink capacity. Since more than 100 channels are required for hyperspectral sensors on Earth observation satellites, fast and small-footprint lossless image compression capability is essential for reducing the size and weight of a sensor system. A fast lossless image compression algorithm has been developed, and is implemented in the onboard correction circuitry of sensitivity and linearity of Complementary Metal Oxide Semiconductor (CMOS) sensors in order to maximize the compression ratio. The employed image compression method is based on Fast, Efficient, Lossless Image compression System (FELICS), which is a hierarchical predictive coding method with resolution scaling. To improve FELICS’s performance of image decorrelation and entropy coding, we apply a two-dimensional interpolation prediction and adaptive Golomb-Rice coding. It supports progressive decompression using resolution scaling while still maintaining superior performance measured as speed and complexity. Coding efficiency and compression speed enlarge the effective capacity of signal transmission channels, which lead to reducing onboard hardware by multiplexing sensor signals into a reduced number of compression circuits. The circuitry is embedded into the data formatter of the sensor system without adding size, weight, power consumption, and fabrication cost. PMID:26404281

Decoding mobile-phone image sensor rolling shutter effect for visible light communications

NASA Astrophysics Data System (ADS)

Liu, Yang

2016-01-01

Optical wireless communication (OWC) using visible lights, also known as visible light communication (VLC), has attracted significant attention recently. As the traditional OWC and VLC receivers (Rxs) are based on PIN photo-diode or avalanche photo-diode, deploying the complementary metal-oxide-semiconductor (CMOS) image sensor as the VLC Rx is attractive since nowadays nearly every person has a smart phone with embedded CMOS image sensor. However, deploying the CMOS image sensor as the VLC Rx is challenging. In this work, we propose and demonstrate two simple contrast ratio (CR) enhancement schemes to improve the contrast of the rolling shutter pattern. Then we describe their processing algorithms one by one. The experimental results show that both the proposed CR enhancement schemes can significantly mitigate the high-intensity fluctuations of the rolling shutter pattern and improve the bit-error-rate performance.

Light-Addressable Potentiometric Sensors using ZnO Nanorods as the Sensor Substrate for Bioanalytical Applications.

PubMed

Tu, Ying; Ahmad, Norlaily; Briscoe, Joe; Zhang, De-Wen; Krause, Steffi

2018-06-22

Light-addressable potentiometric sensors (LAPS) are of great interest in bioimaging applications such as the monitoring of concentrations in microfluidic channels or the investigation of metabolic and signaling events in living cells. By measuring the photocurrents at electrolyte-insulator-semiconductor (EIS) and electrolyte-semiconductor structures, LAPS can produce spatiotemporal images of chemical or biological analytes, electrical potentials and impedance. However, its commercial applications are often restricted by their limited AC photocurrents and resolution of LAPS images. Herein, for the first time, the use of 1D semiconducting oxides in the form of ZnO nanorods for LAPS imaging is explored to solve this issue. A significantly increased AC photocurrent with enhanced image resolution has been achieved based on ZnO nanorods, with a photocurrent of 45.7 ± 0.1 nA at a light intensity of 0.05 mW, a lateral resolution as low as 3.0 μm as demonstrated by images of a PMMA dot on ZnO nanorods and a pH sensitivity of 53 mV/pH. The suitability of the device for bioanalysis and bioimaging was demonstrated by monitoring the degradation of a thin poly(ester amide) film with the enzyme α-chymotrypsin using LAPS. This simple and robust route to fabricate LAPS substrates with excellent performance would provide tremendous opportunities for bioimaging.

The Si/CdTe semiconductor camera of the ASTRO-H Hard X-ray Imager (HXI)

NASA Astrophysics Data System (ADS)

Sato, Goro; Hagino, Kouichi; Watanabe, Shin; Genba, Kei; Harayama, Atsushi; Kanematsu, Hironori; Kataoka, Jun; Katsuragawa, Miho; Kawaharada, Madoka; Kobayashi, Shogo; Kokubun, Motohide; Kuroda, Yoshikatsu; Makishima, Kazuo; Masukawa, Kazunori; Mimura, Taketo; Miyake, Katsuma; Murakami, Hiroaki; Nakano, Toshio; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Onishi, Mitsunobu; Saito, Shinya; Sato, Rie; Sato, Tamotsu; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shin`ichiro; Yuasa, Takayuki

2016-09-01

The Hard X-ray Imager (HXI) is one of the instruments onboard the ASTRO-H mission [1-4] to be launched in early 2016. The HXI is the focal plane detector of the hard X-ray reflecting telescope that covers an energy range from 5 to 80 keV. It will execute observations of astronomical objects with a sensitivity for point sources as faint as 1/100,000 of the Crab nebula at > 10 keV. The HXI camera - the imaging part of the HXI - is realized by a hybrid semiconductor detector system that consists of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. Here, we present the final design of the HXI camera and report on the development of the flight model. The camera is composed of four layers of Double-sided Silicon Strip Detectors (DSSDs) and one layer of CdTe Double-sided Strip Detector (CdTe-DSD), each with an imaging area of 32 mm×32 mm. The strip pitch of the Si and CdTe sensors is 250 μm, and the signals from all 1280 strips are processed by 40 Application Specified Integrated Circuits (ASICs) developed for the HXI. The five layers of sensors are vertically stacked with a 4 mm spacing to increase the detection efficiency. The thickness of the sensors is 0.5 mm for the Si, and 0.75 mm for the CdTe. In this configuration, soft X-ray photons will be absorbed in the Si part, while hard X-ray photons will go through the Si part and will be detected in the CdTe part. The design of the sensor trays, peripheral circuits, power connections, and readout schemes are also described. The flight models of the HXI camera have been manufactured, tested and installed in the HXI instrument and then on the satellite.

An airborne multispectral imaging system based on two consumer-grade cameras for agricultural remote sensing

USDA-ARS?s Scientific Manuscript database

This paper describes the design and evaluation of an airborne multispectral imaging system based on two identical consumer-grade cameras for agricultural remote sensing. The cameras are equipped with a full-frame complementary metal oxide semiconductor (CMOS) sensor with 5616 × 3744 pixels. One came...

4K x 2K pixel color video pickup system

NASA Astrophysics Data System (ADS)

Sugawara, Masayuki; Mitani, Kohji; Shimamoto, Hiroshi; Fujita, Yoshihiro; Yuyama, Ichiro; Itakura, Keijirou

1998-12-01

This paper describes the development of an experimental super- high-definition color video camera system. During the past several years there has been much interest in super-high- definition images as the next generation image media. One of the difficulties in implementing a super-high-definition motion imaging system is constructing the image-capturing section (camera). Even the state-of-the-art semiconductor technology can not realize the image sensor which has enough pixels and output data rate for super-high-definition images. The present study is an attempt to fill the gap in this respect. The authors intend to solve the problem by using new imaging method in which four HDTV sensors are attached on a new color separation optics so that their pixel sample pattern forms checkerboard pattern. A series of imaging experiments demonstrate that this technique is an effective approach to capturing super-high-definition moving images in the present situation where no image sensors exist for such images.

High-speed imaging using CMOS image sensor with quasi pixel-wise exposure

NASA Astrophysics Data System (ADS)

Sonoda, T.; Nagahara, H.; Endo, K.; Sugiyama, Y.; Taniguchi, R.

2017-02-01

Several recent studies in compressive video sensing have realized scene capture beyond the fundamental trade-off limit between spatial resolution and temporal resolution using random space-time sampling. However, most of these studies showed results for higher frame rate video that were produced by simulation experiments or using an optically simulated random sampling camera, because there are currently no commercially available image sensors with random exposure or sampling capabilities. We fabricated a prototype complementary metal oxide semiconductor (CMOS) image sensor with quasi pixel-wise exposure timing that can realize nonuniform space-time sampling. The prototype sensor can reset exposures independently by columns and fix these amount of exposure by rows for each 8x8 pixel block. This CMOS sensor is not fully controllable via the pixels, and has line-dependent controls, but it offers flexibility when compared with regular CMOS or charge-coupled device sensors with global or rolling shutters. We propose a method to realize pseudo-random sampling for high-speed video acquisition that uses the flexibility of the CMOS sensor. We reconstruct the high-speed video sequence from the images produced by pseudo-random sampling using an over-complete dictionary.

CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device

NASA Astrophysics Data System (ADS)

Uryu, Yuko; Asano, Tanemasa

2002-04-01

A new photodetector device composed of a lateral junction photodiode and a metal-oxide-semiconductor field-effect-transistor (MOSFET), in which the output of the diode is fed through the body of the MOSFET, has been investigated. It is shown that the silicon-on-insulator (SOI)-MOSFET amplifies the junction photodiode current due to the lateral bipolar action. It is also shown that the presence of the electrically floating gate enhances the current amplification factor of the SOI-MOSFET. The output current of this composite device linearly responds by four orders of illumination intensity. As an application of the composite device, a complementary-metal-oxide-semiconductor (CMOS) line sensor incorporating the composite device is fabricated and its operation is demonstrated. The output signal of the line sensor using the composite device was two times larger than that using the lateral photodiode.

Origin of high photoconductive gain in fully transparent heterojunction nanocrystalline oxide image sensors and interconnects.

PubMed

Jeon, Sanghun; Song, Ihun; Lee, Sungsik; Ryu, Byungki; Ahn, Seung-Eon; Lee, Eunha; Kim, Young; Nathan, Arokia; Robertson, John; Chung, U-In

2014-11-05

A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin-film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible-light wavelengths. The phototransistor is a Hf-In-Zn-O/In-Zn-O heterostructure yielding a high quantum-efficiency in the visible range. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and fabrication of vertically-integrated CMOS image sensors.

PubMed

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

PubMed Central

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

NASA Tech Briefs, April 2004

NASA Technical Reports Server (NTRS)

2004-01-01

Topics covered include: Analysis of SSEM Sensor Data Using BEAM; Hairlike Percutaneous Photochemical Sensors; Video Guidance Sensors Using Remotely Activated Targets; Simulating Remote Sensing Systems; EHW Approach to Temperature Compensation of Electronics; Polymorphic Electronic Circuits; Micro-Tubular Fuel Cells; Whispering-Gallery-Mode Tunable Narrow-Band-Pass Filter; PVM Wrapper; Simulation of Hyperspectral Images; Algorithm for Controlling a Centrifugal Compressor; Hybrid Inflatable Pressure Vessel; Double-Acting, Locking Carabiners; Position Sensor Integral with a Linear Actuator; Improved Electromagnetic Brake; Flow Straightener for a Rotating-Drum Liquid Separator; Sensory-Feedback Exoskeletal Arm Controller; Active Suppression of Instabilities in Engine Combustors; Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs; Chemical Thinning Process for Fabricating UV-Imaging CCDs; Pseudoslit Spectrometer; Waste-Heat-Driven Cooling Using Complex Compound Sorbents; Improved Refractometer for Measuring Temperatures of Drops; Semiconductor Lasers Containing Quantum Wells in Junctions; Phytoplankton-Fluorescence-Lifetime Vertical Profiler; Hexagonal Pixels and Indexing Scheme for Binary Images; Finding Minimum-Power Broadcast Trees for Wireless Networks; and Automation of Design Engineering Processes.

Light-Addressable Potentiometric Sensors for Quantitative Spatial Imaging of Chemical Species.

PubMed

Yoshinobu, Tatsuo; Miyamoto, Ko-Ichiro; Werner, Carl Frederik; Poghossian, Arshak; Wagner, Torsten; Schöning, Michael J

2017-06-12

A light-addressable potentiometric sensor (LAPS) is a semiconductor-based chemical sensor, in which a measurement site on the sensing surface is defined by illumination. This light addressability can be applied to visualize the spatial distribution of pH or the concentration of a specific chemical species, with potential applications in the fields of chemistry, materials science, biology, and medicine. In this review, the features of this chemical imaging sensor technology are compared with those of other technologies. Instrumentation, principles of operation, and various measurement modes of chemical imaging sensor systems are described. The review discusses and summarizes state-of-the-art technologies, especially with regard to the spatial resolution and measurement speed; for example, a high spatial resolution in a submicron range and a readout speed in the range of several tens of thousands of pixels per second have been achieved with the LAPS. The possibility of combining this technology with microfluidic devices and other potential future developments are discussed.

Smart image sensors: an emerging key technology for advanced optical measurement and microsystems

NASA Astrophysics Data System (ADS)

Seitz, Peter

1996-08-01

Optical microsystems typically include photosensitive devices, analog preprocessing circuitry and digital signal processing electronics. The advances in semiconductor technology have made it possible today to integrate all photosensitive and electronical devices on one 'smart image sensor' or photo-ASIC (application-specific integrated circuits containing photosensitive elements). It is even possible to provide each 'smart pixel' with additional photoelectronic functionality, without compromising the fill factor substantially. This technological capability is the basis for advanced cameras and optical microsystems showing novel on-chip functionality: Single-chip cameras with on- chip analog-to-digital converters for less than $10 are advertised; image sensors have been developed including novel functionality such as real-time selectable pixel size and shape, the capability of performing arbitrary convolutions simultaneously with the exposure, as well as variable, programmable offset and sensitivity of the pixels leading to image sensors with a dynamic range exceeding 150 dB. Smart image sensors have been demonstrated offering synchronous detection and demodulation capabilities in each pixel (lock-in CCD), and conventional image sensors are combined with an on-chip digital processor for complete, single-chip image acquisition and processing systems. Technological problems of the monolithic integration of smart image sensors include offset non-uniformities, temperature variations of electronic properties, imperfect matching of circuit parameters, etc. These problems can often be overcome either by designing additional compensation circuitry or by providing digital correction routines. Where necessary for technological or economic reasons, smart image sensors can also be combined with or realized as hybrids, making use of commercially available electronic components. It is concluded that the possibilities offered by custom smart image sensors will influence the design and the performance of future electronic imaging systems in many disciplines, reaching from optical metrology to machine vision on the factory floor and in robotics applications.

Mechanisms of Current Transfer in Electrodeposited Layers of Submicron Semiconductor Particles

NASA Astrophysics Data System (ADS)

Zhukov, N. D.; Mosiyash, D. S.; Sinev, I. V.; Khazanov, A. A.; Smirnov, A. V.; Lapshin, I. V.

2017-12-01

Current-voltage ( I- V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I- V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.

Robust Dehaze Algorithm for Degraded Image of CMOS Image Sensors.

PubMed

Qu, Chen; Bi, Du-Yan; Sui, Ping; Chao, Ai-Nong; Wang, Yun-Fei

2017-09-22

The CMOS (Complementary Metal-Oxide-Semiconductor) is a new type of solid image sensor device widely used in object tracking, object recognition, intelligent navigation fields, and so on. However, images captured by outdoor CMOS sensor devices are usually affected by suspended atmospheric particles (such as haze), causing a reduction in image contrast, color distortion problems, and so on. In view of this, we propose a novel dehazing approach based on a local consistent Markov random field (MRF) framework. The neighboring clique in traditional MRF is extended to the non-neighboring clique, which is defined on local consistent blocks based on two clues, where both the atmospheric light and transmission map satisfy the character of local consistency. In this framework, our model can strengthen the restriction of the whole image while incorporating more sophisticated statistical priors, resulting in more expressive power of modeling, thus, solving inadequate detail recovery effectively and alleviating color distortion. Moreover, the local consistent MRF framework can obtain details while maintaining better results for dehazing, which effectively improves the image quality captured by the CMOS image sensor. Experimental results verified that the method proposed has the combined advantages of detail recovery and color preservation.

CMOS Imaging of Temperature Effects on Pin-Printed Xerogel Sensor Microarrays.

PubMed

Lei Yao; Ka Yi Yung; Chodavarapu, Vamsy P; Bright, Frank V

2011-04-01

In this paper, we study the effect of temperature on the operation and performance of a xerogel-based sensor microarrays coupled to a complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC) that images the photoluminescence response from the sensor microarray. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. A correlated double sampling circuit and pixel address/digital control/signal integration circuit are also implemented on-chip. The CMOS imager data are read out as a serial coded signal. The sensor system uses a light-emitting diode to excite target analyte responsive organometallic luminophores doped within discrete xerogel-based sensor elements. As a proto type, we developed a 3 × 3 (9 elements) array of oxygen (O2) sensors. Each group of three sensor elements in the array (arranged in a column) is designed to provide a different and specific sensitivity to the target gaseous O2 concentration. This property of multiple sensitivities is achieved by using a mix of two O2 sensitive luminophores in each pin-printed xerogel sensor element. The CMOS imager is designed to be low noise and consumes a static power of 320.4 μW and an average dynamic power of 624.6 μW when operating at 100-Hz sampling frequency and 1.8-V dc power supply.

An analog gamma correction scheme for high dynamic range CMOS logarithmic image sensors.

PubMed

Cao, Yuan; Pan, Xiaofang; Zhao, Xiaojin; Wu, Huisi

2014-12-15

In this paper, a novel analog gamma correction scheme with a logarithmic image sensor dedicated to minimize the quantization noise of the high dynamic applications is presented. The proposed implementation exploits a non-linear voltage-controlled-oscillator (VCO) based analog-to-digital converter (ADC) to perform the gamma correction during the analog-to-digital conversion. As a result, the quantization noise does not increase while the same high dynamic range of logarithmic image sensor is preserved. Moreover, by combining the gamma correction with the analog-to-digital conversion, the silicon area and overall power consumption can be greatly reduced. The proposed gamma correction scheme is validated by the reported simulation results and the experimental results measured for our designed test structure, which is fabricated with 0.35 μm standard complementary-metal-oxide-semiconductor (CMOS) process.

An Analog Gamma Correction Scheme for High Dynamic Range CMOS Logarithmic Image Sensors

PubMed Central

Cao, Yuan; Pan, Xiaofang; Zhao, Xiaojin; Wu, Huisi

2014-01-01

In this paper, a novel analog gamma correction scheme with a logarithmic image sensor dedicated to minimize the quantization noise of the high dynamic applications is presented. The proposed implementation exploits a non-linear voltage-controlled-oscillator (VCO) based analog-to-digital converter (ADC) to perform the gamma correction during the analog-to-digital conversion. As a result, the quantization noise does not increase while the same high dynamic range of logarithmic image sensor is preserved. Moreover, by combining the gamma correction with the analog-to-digital conversion, the silicon area and overall power consumption can be greatly reduced. The proposed gamma correction scheme is validated by the reported simulation results and the experimental results measured for our designed test structure, which is fabricated with 0.35 μm standard complementary-metal-oxide-semiconductor (CMOS) process. PMID:25517692

Applications of the Integrated High-Performance CMOS Image Sensor to Range Finders — from Optical Triangulation to the Automotive Field

PubMed Central

Wu, Jih-Huah; Pen, Cheng-Chung; Jiang, Joe-Air

2008-01-01

With their significant features, the applications of complementary metal-oxide semiconductor (CMOS) image sensors covers a very extensive range, from industrial automation to traffic applications such as aiming systems, blind guidance, active/passive range finders, etc. In this paper CMOS image sensor-based active and passive range finders are presented. The measurement scheme of the proposed active/passive range finders is based on a simple triangulation method. The designed range finders chiefly consist of a CMOS image sensor and some light sources such as lasers or LEDs. The implementation cost of our range finders is quite low. Image processing software to adjust the exposure time (ET) of the CMOS image sensor to enhance the performance of triangulation-based range finders was also developed. An extensive series of experiments were conducted to evaluate the performance of the designed range finders. From the experimental results, the distance measurement resolutions achieved by the active range finder and the passive range finder can be better than 0.6% and 0.25% within the measurement ranges of 1 to 8 m and 5 to 45 m, respectively. Feasibility tests on applications of the developed CMOS image sensor-based range finders to the automotive field were also conducted. The experimental results demonstrated that our range finders are well-suited for distance measurements in this field. PMID:27879789

A Real-Time Ultraviolet Radiation Imaging System Using an Organic Photoconductive Image Sensor†

PubMed Central

Okino, Toru; Yamahira, Seiji; Yamada, Shota; Hirose, Yutaka; Odagawa, Akihiro; Kato, Yoshihisa; Tanaka, Tsuyoshi

2018-01-01

We have developed a real time ultraviolet (UV) imaging system that can visualize both invisible UV light and a visible (VIS) background scene in an outdoor environment. As a UV/VIS image sensor, an organic photoconductive film (OPF) imager is employed. The OPF has an intrinsically higher sensitivity in the UV wavelength region than those of conventional consumer Complementary Metal Oxide Semiconductor (CMOS) image sensors (CIS) or Charge Coupled Devices (CCD). As particular examples, imaging of hydrogen flame and of corona discharge is demonstrated. UV images overlapped on background scenes are simply made by on-board background subtraction. The system is capable of imaging weaker UV signals by four orders of magnitude than that of VIS background. It is applicable not only to future hydrogen supply stations but also to other UV/VIS monitor systems requiring UV sensitivity under strong visible radiation environment such as power supply substations. PMID:29361742

Efficient Smart CMOS Camera Based on FPGAs Oriented to Embedded Image Processing

PubMed Central

Bravo, Ignacio; Baliñas, Javier; Gardel, Alfredo; Lázaro, José L.; Espinosa, Felipe; García, Jorge

2011-01-01

This article describes an image processing system based on an intelligent ad-hoc camera, whose two principle elements are a high speed 1.2 megapixel Complementary Metal Oxide Semiconductor (CMOS) sensor and a Field Programmable Gate Array (FPGA). The latter is used to control the various sensor parameter configurations and, where desired, to receive and process the images captured by the CMOS sensor. The flexibility and versatility offered by the new FPGA families makes it possible to incorporate microprocessors into these reconfigurable devices, and these are normally used for highly sequential tasks unsuitable for parallelization in hardware. For the present study, we used a Xilinx XC4VFX12 FPGA, which contains an internal Power PC (PPC) microprocessor. In turn, this contains a standalone system which manages the FPGA image processing hardware and endows the system with multiple software options for processing the images captured by the CMOS sensor. The system also incorporates an Ethernet channel for sending processed and unprocessed images from the FPGA to a remote node. Consequently, it is possible to visualize and configure system operation and captured and/or processed images remotely. PMID:22163739

Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications.

PubMed

Jeon, Sanghun; Park, Sungho; Song, Ihun; Hur, Ji-Hyun; Park, Jaechul; Kim, Hojung; Kim, Sunil; Kim, Sangwook; Yin, Huaxiang; Chung, U-In; Lee, Eunha; Kim, Changjung

2011-01-01

The integration of electronically active oxide components onto silicon circuits represents an innovative approach to improving the functionality of novel devices. Like most semiconductor devices, complementary-metal-oxide-semiconductor image sensors (CISs) have physical limitations when progressively scaled down to extremely small dimensions. In this paper, we propose a novel hybrid CIS architecture that is based on the combination of nanometer-scale amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and a conventional Si photo diode (PD). With this approach, we aim to overcome the loss of quantum efficiency and image quality due to the continuous miniaturization of PDs. Specifically, the a-IGZO TFT with 180 nm gate length is probed to exhibit remarkable performance including low 1/f noise and high output gain, despite fabrication temperatures as low as 200 °C. In particular, excellent device performance is achieved using a double-layer gate dielectric (Al₂O₃/SiO₂) combined with a trapezoidal active region formed by a tailored etching process. A self-aligned top gate structure is adopted to ensure low parasitic capacitance. Lastly, three-dimensional (3D) process simulation tools are employed to optimize the four-pixel CIS structure. The results demonstrate how our stacked hybrid device could be the starting point for new device strategies in image sensor architectures. Furthermore, we expect the proposed approach to be applicable to a wide range of micro- and nanoelectronic devices and systems.

Ultraviolet Imaging with Low Cost Smartphone Sensors: Development and Application of a Raspberry Pi-Based UV Camera.

PubMed

Wilkes, Thomas C; McGonigle, Andrew J S; Pering, Tom D; Taggart, Angus J; White, Benjamin S; Bryant, Robert G; Willmott, Jon R

2016-10-06

Here, we report, for what we believe to be the first time, on the modification of a low cost sensor, designed for the smartphone camera market, to develop an ultraviolet (UV) camera system. This was achieved via adaptation of Raspberry Pi cameras, which are based on back-illuminated complementary metal-oxide semiconductor (CMOS) sensors, and we demonstrated the utility of these devices for applications at wavelengths as low as 310 nm, by remotely sensing power station smokestack emissions in this spectral region. Given the very low cost of these units, ≈ USD 25, they are suitable for widespread proliferation in a variety of UV imaging applications, e.g., in atmospheric science, volcanology, forensics and surface smoothness measurements.

The Dynamic Photometric Stereo Method Using a Multi-Tap CMOS Image Sensor.

PubMed

Yoda, Takuya; Nagahara, Hajime; Taniguchi, Rin-Ichiro; Kagawa, Keiichiro; Yasutomi, Keita; Kawahito, Shoji

2018-03-05

The photometric stereo method enables estimation of surface normals from images that have been captured using different but known lighting directions. The classical photometric stereo method requires at least three images to determine the normals in a given scene. However, this method cannot be applied to dynamic scenes because it is assumed that the scene remains static while the required images are captured. In this work, we present a dynamic photometric stereo method for estimation of the surface normals in a dynamic scene. We use a multi-tap complementary metal-oxide-semiconductor (CMOS) image sensor to capture the input images required for the proposed photometric stereo method. This image sensor can divide the electrons from the photodiode from a single pixel into the different taps of the exposures and can thus capture multiple images under different lighting conditions with almost identical timing. We implemented a camera lighting system and created a software application to enable estimation of the normal map in real time. We also evaluated the accuracy of the estimated surface normals and demonstrated that our proposed method can estimate the surface normals of dynamic scenes.

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Pain, Bedabrata

2005-01-01

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Piezo-Phototronic Matrix via a Nanowire Array.

PubMed

Zhang, Yang; Zhai, Junyi; Wang, Zhong Lin

2017-12-01

Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Contact CMOS imaging of gaseous oxygen sensor array

PubMed Central

Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

2014-01-01

We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

Contact CMOS imaging of gaseous oxygen sensor array.

PubMed

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

Medipix2 based CdTe microprobe for dental imaging

NASA Astrophysics Data System (ADS)

Vykydal, Z.; Fauler, A.; Fiederle, M.; Jakubek, J.; Svestkova, M.; Zwerger, A.

2011-12-01

Medical imaging devices and techniques are demanded to provide high resolution and low dose images of samples or patients. Hybrid semiconductor single photon counting devices together with suitable sensor materials and advanced techniques of image reconstruction fulfil these requirements. In particular cases such as the direct observation of dental implants also the size of the imaging device itself plays a critical role. This work presents the comparison of 2D radiographs of tooth provided by a standard commercial dental imaging system (Gendex 765DC X-ray tube with VisualiX scintillation detector) and two Medipix2 USB Lite detectors one equipped with a Si sensor (300 μm thick) and one with a CdTe sensor (1 mm thick). Single photon counting capability of the Medipix2 device allows virtually unlimited dynamic range of the images and thus increases the contrast significantly. The dimensions of the whole USB Lite device are only 15 mm × 60 mm of which 25% consists of the sensitive area. Detector of this compact size can be used directly inside the patients' mouth.

Real-time DNA Amplification and Detection System Based on a CMOS Image Sensor.

PubMed

Wang, Tiantian; Devadhasan, Jasmine Pramila; Lee, Do Young; Kim, Sanghyo

2016-01-01

In the present study, we developed a polypropylene well-integrated complementary metal oxide semiconductor (CMOS) platform to perform the loop mediated isothermal amplification (LAMP) technique for real-time DNA amplification and detection simultaneously. An amplification-coupled detection system directly measures the photon number changes based on the generation of magnesium pyrophosphate and color changes. The photon number decreases during the amplification process. The CMOS image sensor observes the photons and converts into digital units with the aid of an analog-to-digital converter (ADC). In addition, UV-spectral studies, optical color intensity detection, pH analysis, and electrophoresis detection were carried out to prove the efficiency of the CMOS sensor based the LAMP system. Moreover, Clostridium perfringens was utilized as proof-of-concept detection for the new system. We anticipate that this CMOS image sensor-based LAMP method will enable the creation of cost-effective, label-free, optical, real-time and portable molecular diagnostic devices.

Fast regional readout CMOS Image Sensor for dynamic MLC tracking

NASA Astrophysics Data System (ADS)

Zin, H.; Harris, E.; Osmond, J.; Evans, P.

2014-03-01

Advanced radiotherapy techniques such as volumetric modulated arc therapy (VMAT) require verification of the complex beam delivery including tracking of multileaf collimators (MLC) and monitoring the dose rate. This work explores the feasibility of a prototype Complementary metal-oxide semiconductor Image Sensor (CIS) for tracking these complex treatments by utilising fast, region of interest (ROI) read out functionality. An automatic edge tracking algorithm was used to locate the MLC leaves edges moving at various speeds (from a moving triangle field shape) and imaged with various sensor frame rates. The CIS demonstrates successful edge detection of the dynamic MLC motion within accuracy of 1.0 mm. This demonstrates the feasibility of the sensor to verify treatment delivery involving dynamic MLC up to ~400 frames per second (equivalent to the linac pulse rate), which is superior to any current techniques such as using electronic portal imaging devices (EPID). CIS provides the basis to an essential real-time verification tool, useful in accessing accurate delivery of complex high energy radiation to the tumour and ultimately to achieve better cure rates for cancer patients.

The Solid State Image Sensor's Contribution To The Development Of Silicon Technology

NASA Astrophysics Data System (ADS)

Weckler, Gene P.

1985-12-01

Until recently, a solid-state image sensor with full television resolution was a dream. However, the dream of a solid state image sensor has been a driving force in the development of silicon technology for more than twenty-five years. There are probably many in the main stream of semiconductor technology who would argue with this; however, the solid state image sensor was conceived years before the invention of the semi conductor RAM or the microprocessor (i.e., even before the invention of the integrated circuit). No other potential application envisioned at that time required such complexity. How could anyone have ever hoped in 1960 to make a semi conductor chip containing half-a-million picture elements, capable of resolving eight to twelve bits of infornation, and each capable of readout rates in the tens of mega-pixels per second? As early as 1960 arrays of p-n junctions were being investigated as the optical targets in vidicon tubes, replacing the photoconductive targets. It took silicon technology several years to catch up with these dreamers.

Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

NASA Astrophysics Data System (ADS)

Lu, Y.; Tang, H.; Fung, S.; Wang, Q.; Tsai, J. M.; Daneman, M.; Boser, B. E.; Horsley, D. A.

2015-06-01

This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ˜14 kPa with a 28 V input, in reasonable agreement with predication from analytical calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.

Optimization of CMOS image sensor utilizing variable temporal multisampling partial transfer technique to achieve full-frame high dynamic range with superior low light and stop motion capability

NASA Astrophysics Data System (ADS)

Kabir, Salman; Smith, Craig; Armstrong, Frank; Barnard, Gerrit; Schneider, Alex; Guidash, Michael; Vogelsang, Thomas; Endsley, Jay

2018-03-01

Differential binary pixel technology is a threshold-based timing, readout, and image reconstruction method that utilizes the subframe partial charge transfer technique in a standard four-transistor (4T) pixel CMOS image sensor to achieve a high dynamic range video with stop motion. This technology improves low light signal-to-noise ratio (SNR) by up to 21 dB. The method is verified in silicon using a Taiwan Semiconductor Manufacturing Company's 65 nm 1.1 μm pixel technology 1 megapixel test chip array and is compared with a traditional 4 × oversampling technique using full charge transfer to show low light SNR superiority of the presented technology.

Note: A disposable x-ray camera based on mass produced complementary metal-oxide-semiconductor sensors and single-board computers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoidn, Oliver R.; Seidler, Gerald T., E-mail: seidler@uw.edu

We have integrated mass-produced commercial complementary metal-oxide-semiconductor (CMOS) image sensors and off-the-shelf single-board computers into an x-ray camera platform optimized for acquisition of x-ray spectra and radiographs at energies of 2–6 keV. The CMOS sensor and single-board computer are complemented by custom mounting and interface hardware that can be easily acquired from rapid prototyping services. For single-pixel detection events, i.e., events where the deposited energy from one photon is substantially localized in a single pixel, we establish ∼20% quantum efficiency at 2.6 keV with ∼190 eV resolution and a 100 kHz maximum detection rate. The detector platform’s useful intrinsic energymore » resolution, 5-μm pixel size, ease of use, and obvious potential for parallelization make it a promising candidate for many applications at synchrotron facilities, in laser-heating plasma physics studies, and in laboratory-based x-ray spectrometry.« less

Repeat analysis of intraoral digital imaging performed by undergraduate students using a complementary metal oxide semiconductor sensor: An institutional case study.

PubMed

Yusof, Mohd Yusmiaidil Putera Mohd; Rahman, Nur Liyana Abdul; Asri, Amiza Aqiela Ahmad; Othman, Noor Ilyani; Wan Mokhtar, Ilham

2017-12-01

This study was performed to quantify the repeat rate of imaging acquisitions based on different clinical examinations, and to assess the prevalence of error types in intraoral bitewing and periapical imaging using a digital complementary metal-oxide-semiconductor (CMOS) intraoral sensor. A total of 8,030 intraoral images were retrospectively collected from 3 groups of undergraduate clinical dental students. The type of examination, stage of the procedure, and reasons for repetition were analysed and recorded. The repeat rate was calculated as the total number of repeated images divided by the total number of examinations. The weighted Cohen's kappa for inter- and intra-observer agreement was used after calibration and prior to image analysis. The overall repeat rate on intraoral periapical images was 34.4%. A total of 1,978 repeated periapical images were from endodontic assessment, which included working length estimation (WLE), trial gutta-percha (tGP), obturation, and removal of gutta-percha (rGP). In the endodontic imaging, the highest repeat rate was from WLE (51.9%) followed by tGP (48.5%), obturation (42.2%), and rGP (35.6%). In bitewing images, the repeat rate was 15.1% and poor angulation was identified as the most common cause of error. A substantial level of intra- and interobserver agreement was achieved. The repeat rates in this study were relatively high, especially for certain clinical procedures, warranting training in optimization techniques and radiation protection. Repeat analysis should be performed from time to time to enhance quality assurance and hence deliver high-quality health services to patients.

Ultraviolet Imaging with Low Cost Smartphone Sensors: Development and Application of a Raspberry Pi-Based UV Camera

PubMed Central

Wilkes, Thomas C.; McGonigle, Andrew J. S.; Pering, Tom D.; Taggart, Angus J.; White, Benjamin S.; Bryant, Robert G.; Willmott, Jon R.

2016-01-01

Here, we report, for what we believe to be the first time, on the modification of a low cost sensor, designed for the smartphone camera market, to develop an ultraviolet (UV) camera system. This was achieved via adaptation of Raspberry Pi cameras, which are based on back-illuminated complementary metal-oxide semiconductor (CMOS) sensors, and we demonstrated the utility of these devices for applications at wavelengths as low as 310 nm, by remotely sensing power station smokestack emissions in this spectral region. Given the very low cost of these units, ≈ USD 25, they are suitable for widespread proliferation in a variety of UV imaging applications, e.g., in atmospheric science, volcanology, forensics and surface smoothness measurements. PMID:27782054

Uncooled infrared photon detector and multicolor infrared detection using microoptomechanical sensors

DOEpatents

Datskos, Panagiotis G.; Rajic, Solobodan; Datskou, Irene C.

1999-01-01

Systems and methods for infrared detection are described. An optomechanical photon detector includes a semiconductor material and is based on measurement of a photoinduced lattice strain. A multicolor infrared sensor includes a stack of frequency specific optomechanical detectors. The stack can include one, or more, of the optomechanical photon detectors that function based on the measurement of photoinduced lattice strain. The systems and methods provide advantages in that rapid, sensitive multicolor infrared imaging can be performed without the need for a cooling subsystem.

An Ultrasensitive Organic Semiconductor NO2 Sensor Based on Crystalline TIPS-Pentacene Films.

PubMed

Wang, Zi; Huang, Lizhen; Zhu, Xiaofei; Zhou, Xu; Chi, Lifeng

2017-10-01

Organic semiconductor gas sensor is one of the promising candidates of room temperature operated gas sensors with high selectivity. However, for a long time the performance of organic semiconductor sensors, especially for the detection of oxidizing gases, is far behind that of the traditional metal oxide gas sensors. Although intensive attempts have been made to address the problem, the performance and the understanding of the sensing mechanism are still far from sufficient. Herein, an ultrasensitive organic semiconductor NO 2 sensor based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-petacene) is reported. The device achieves a sensitivity over 1000%/ppm and fast response/recovery, together with a low limit of detection (LOD) of 20 ppb, all of which reach the level of metal oxide sensors. After a comprehensive analysis on the morphology and electrical properties of the organic films, it is revealed that the ultrahigh performance is largely related to the film charge transport ability, which was less concerned in the studies previously. And the combination of efficient charge transport and low original charge carrier concentration is demonstrated to be an effective access to obtain high performance organic semiconductor gas sensors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multi-Aperture-Based Probabilistic Noise Reduction of Random Telegraph Signal Noise and Photon Shot Noise in Semi-Photon-Counting Complementary-Metal-Oxide-Semiconductor Image Sensor

PubMed Central

Ishida, Haruki; Kagawa, Keiichiro; Komuro, Takashi; Zhang, Bo; Seo, Min-Woong; Takasawa, Taishi; Yasutomi, Keita; Kawahito, Shoji

2018-01-01

A probabilistic method to remove the random telegraph signal (RTS) noise and to increase the signal level is proposed, and was verified by simulation based on measured real sensor noise. Although semi-photon-counting-level (SPCL) ultra-low noise complementary-metal-oxide-semiconductor (CMOS) image sensors (CISs) with high conversion gain pixels have emerged, they still suffer from huge RTS noise, which is inherent to the CISs. The proposed method utilizes a multi-aperture (MA) camera that is composed of multiple sets of an SPCL CIS and a moderately fast and compact imaging lens to emulate a very fast single lens. Due to the redundancy of the MA camera, the RTS noise is removed by the maximum likelihood estimation where noise characteristics are modeled by the probability density distribution. In the proposed method, the photon shot noise is also relatively reduced because of the averaging effect, where the pixel values of all the multiple apertures are considered. An extremely low-light condition that the maximum number of electrons per aperture was the only 2e− was simulated. PSNRs of a test image for simple averaging, selective averaging (our previous method), and the proposed method were 11.92 dB, 11.61 dB, and 13.14 dB, respectively. The selective averaging, which can remove RTS noise, was worse than the simple averaging because it ignores the pixels with RTS noise and photon shot noise was less improved. The simulation results showed that the proposed method provided the best noise reduction performance. PMID:29587424

Ultrafast Radiation Detection by Modulation of an Optical Probe Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vernon, S P; Lowry, M E

2006-02-22

We describe a new class of radiation sensor that utilizes optical interferometry to measure radiation-induced changes in the optical refractive index of a semiconductor sensor medium. Radiation absorption in the sensor material produces a transient, non-equilibrium, electron-hole pair distribution that locally modifies the complex, optical refractive index of the sensor medium. Changes in the real (imaginary) part of the local refractive index produce a differential phase shift (absorption) of an optical probe used to interrogate the sensor material. In contrast to conventional radiation detectors where signal levels are proportional to the incident energy, signal levels in these optical sensors aremore » proportional to the incident radiation energy flux. This allows for reduction of the sensor form factor with no degradation in detection sensitivity. Furthermore, since the radiation induced, non-equilibrium electron-hole pair distribution is effectively measured ''in place'' there is no requirement to spatially separate and collect the generated charges; consequently, the sensor risetime is of the order of the hot-electron thermalization time {le} 10 fs and the duration of the index perturbation is determined by the carrier recombination time which is of order {approx} 600 fs in, direct-bandgap semiconductors, with a high density of recombination defects; consequently, the optical sensors can be engineered with sub-ps temporal response. A series of detectors were designed, and incorporated into Mach Zehnder and Fabry-Perot interferometer-based detection systems: proof of concept, lower detection sensitivity, Mach-Zehnder detectors were characterized at beamline 6.3 at SSRL; three generations of high sensitivity single element and imaging Fabry-Perot detectors were measured at the LLNL Europa facility. Our results indicate that this technology can be used to provide x-ray detectors and x-ray imaging systems with single x-ray sensitivity and S/N {approx} 30 at x-ray energies {approx} 10 keV.« less

The Dynamic Photometric Stereo Method Using a Multi-Tap CMOS Image Sensor †

PubMed Central

Yoda, Takuya; Nagahara, Hajime; Taniguchi, Rin-ichiro; Kagawa, Keiichiro; Yasutomi, Keita; Kawahito, Shoji

2018-01-01

The photometric stereo method enables estimation of surface normals from images that have been captured using different but known lighting directions. The classical photometric stereo method requires at least three images to determine the normals in a given scene. However, this method cannot be applied to dynamic scenes because it is assumed that the scene remains static while the required images are captured. In this work, we present a dynamic photometric stereo method for estimation of the surface normals in a dynamic scene. We use a multi-tap complementary metal-oxide-semiconductor (CMOS) image sensor to capture the input images required for the proposed photometric stereo method. This image sensor can divide the electrons from the photodiode from a single pixel into the different taps of the exposures and can thus capture multiple images under different lighting conditions with almost identical timing. We implemented a camera lighting system and created a software application to enable estimation of the normal map in real time. We also evaluated the accuracy of the estimated surface normals and demonstrated that our proposed method can estimate the surface normals of dynamic scenes. PMID:29510599

Electro-chemical sensors, sensor arrays and circuits

DOEpatents

Katz, Howard E.; Kong, Hoyoul

2014-07-08

An electro-chemical sensor includes a first electrode, a second electrode spaced apart from the first electrode, and a semiconductor channel in electrical contact with the first and second electrodes. The semiconductor channel includes a trapping material. The trapping material reduces an ability of the semiconductor channel to conduct a current of charge carriers by trapping at least some of the charge carriers to localized regions within the semiconductor channel. The semiconductor channel includes at least a portion configured to be exposed to an analyte to be detected, and the trapping material, when exposed to the analyte, interacts with the analyte so as to at least partially restore the ability of the semiconductor channel to conduct the current of charge carriers.

Narrow-Band Organic Photodiodes for High-Resolution Imaging.

PubMed

Han, Moon Gyu; Park, Kyung-Bae; Bulliard, Xavier; Lee, Gae Hwang; Yun, Sungyoung; Leem, Dong-Seok; Heo, Chul-Joon; Yagi, Tadao; Sakurai, Rie; Ro, Takkyun; Lim, Seon-Jeong; Sul, Sangchul; Na, Kyoungwon; Ahn, Jungchak; Jin, Yong Wan; Lee, Sangyoon

2016-10-05

There are growing opportunities and demands for image sensors that produce higher-resolution images, even in low-light conditions. Increasing the light input areas through 3D architecture within the same pixel size can be an effective solution to address this issue. Organic photodiodes (OPDs) that possess wavelength selectivity can allow for advancements in this regard. Here, we report on novel push-pull D-π-A dyes specially designed for Gaussian-shaped, narrow-band absorption and the high photoelectric conversion. These p-type organic dyes work both as a color filter and as a source of photocurrents with linear and fast light responses, high sensitivity, and excellent stability, when combined with C60 to form bulk heterojunctions (BHJs). The effectiveness of the OPD composed of the active color filter was demonstrated by obtaining a full-color image using a camera that contained an organic/Si hybrid complementary metal-oxide-semiconductor (CMOS) color image sensor.

Sensors for process control Focus Team report

NASA Astrophysics Data System (ADS)

At the Semiconductor Technology Workshop, held in November 1992, the Semiconductor Industry Association (SIA) convened 179 semiconductor technology experts to assess the 15-year outlook for the semiconductor manufacturing industry. The output of the Workshop, a document entitled 'Semiconductor Technology: Workshop Working Group Reports,' contained an overall roadmap for the technology characteristics envisioned in integrated circuits (IC's) for the period 1992-2007. In addition, the document contained individual roadmaps for numerous key areas in IC manufacturing, such as film deposition, thermal processing, manufacturing systems, exposure technology, etc. The SIA Report did not contain a separate roadmap for contamination free manufacturing (CFM). A key component of CFM for the next 15 years is the use of sensors for (1) defect reduction, (2) improved product quality, (3) improved yield, (4) improved tool utilization through contamination reduction, and (5) real time process control in semiconductor fabrication. The objective of this Focus Team is to generate a Sensors for Process Control Roadmap. Implicit in this objective is the identification of gaps in current sensor technology so that research and development activity in the sensor industry can be stimulated to develop sensor systems capable of meeting the projected roadmap needs. Sensor performance features of interest include detection limit, specificity, sensitivity, ease of installation and maintenance, range, response time, accuracy, precision, ease and frequency of calibration, degree of automation, and adaptability to in-line process control applications.

Crosstalk quantification, analysis, and trends in CMOS image sensors.

PubMed

Blockstein, Lior; Yadid-Pecht, Orly

2010-08-20

Pixel crosstalk (CTK) consists of three components, optical CTK (OCTK), electrical CTK (ECTK), and spectral CTK (SCTK). The CTK has been classified into two groups: pixel-architecture dependent and pixel-architecture independent. The pixel-architecture-dependent CTK (PADC) consists of the sum of two CTK components, i.e., the OCTK and the ECTK. This work presents a short summary of a large variety of methods for PADC reduction. Following that, this work suggests a clear quantifiable definition of PADC. Three complementary metal-oxide-semiconductor (CMOS) image sensors based on different technologies were empirically measured, using a unique scanning technology, the S-cube. The PADC is analyzed, and technology trends are shown.

Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

PubMed

Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

2017-12-13

A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ma, Jiaju; Zhang, Yang; Wang, Xiaoxin; Ying, Lei; Masoodian, Saleh; Wang, Zhiyuan; Starkey, Dakota A.; Deng, Wei; Kumar, Rahul; Wu, Yang; Ghetmiri, Seyed Amir; Yu, Zongfu; Yu, Shui-Qing; Salamo, Gregory J.; Fossum, Eric R.; Liu, Jifeng

2017-05-01

This research investigates the fundamental limits and trade-space of quantum semiconductor photodetectors using the Schrödinger equation and the laws of thermodynamics.We envision that, to optimize the metrics of single photon detection, it is critical to maximize the optical absorption in the minimal volume and minimize the carrier transit process simultaneously. Integration of photon management with quantum charge transport/redistribution upon optical excitation can be engineered to maximize the quantum efficiency (QE) and data rate and minimize timing jitter at the same time. Due to the ultra-low capacitance of these quantum devices, even a single photoelectron transfer can induce a notable change in the voltage, enabling non-avalanche single photon detection at room temperature as has been recently demonstrated in Si quanta image sensors (QIS). In this research, uniform III-V quantum dots (QDs) and Si QIS are used as model systems to test the theory experimentally. Based on the fundamental understanding, we also propose proof-of-concept, photon-managed quantum capacitance photodetectors. Built upon the concepts of QIS and single electron transistor (SET), this novel device structure provides a model system to synergistically test the fundamental limits and tradespace predicted by the theory for semiconductor detectors. This project is sponsored under DARPA/ARO's DETECT Program: Fundamental Limits of Quantum Semiconductor Photodetectors.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, James W.

1998-01-01

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1998-06-30

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

Carbon Nanotube based Nanotechnolgy

NASA Astrophysics Data System (ADS)

Meyyappan, M.

2000-10-01

Carbon nanotube(CNT) was discovered in the early 1990s and is an off-spring of C60(the fullerene or buckyball). CNT, depending on chirality and diameter, can be metallic or semiconductor and thus allows formation of metal-semiconductor and semiconductor-semiconductor junctions. CNT exhibits extraordinary electrical and mechanical properties and offers remarkable potential for revolutionary applications in electronics devices, computing and data storage technology, sensors, composites, storage of hydrogen or lithium for battery development, nanoelectromechanical systems(NEMS), and as tip in scanning probe microscopy(SPM) for imaging and nanolithography. Thus the CNT synthesis, characterization and applications touch upon all disciplines of science and engineering. A common growth method now is based on CVD though surface catalysis is key to synthesis, in contrast to many CVD applications common in microelectronics. A plasma based variation is gaining some attention. This talk will provide an overview of CNT properties, growth methods, applications, and research challenges and opportunities ahead.

The Morphologies of the Semiconductor Oxides and Their Gas-Sensing Properties

PubMed Central

Lv, Xin; Li, Shuang; Wang, Qingji

2017-01-01

Semiconductor oxide chemoresistive gas sensors are widely used for detecting deleterious gases due to low cost, simple preparation, rapid response and high sensitivity. The performance of gas sensor is greatly affected by the morphology of the semiconductor oxide. There are many semiconductor oxide morphologies, including zero-dimensional, one-dimensional, two-dimensional and three-dimensional ones. The semiconductor oxides with different morphologies significantly enhance the gas-sensing performance. Among the various morphologies, hollow nanostructures and core-shell nanostructures are always the focus of research in the field of gas sensors due to their distinctive structural characteristics and superior performance. Herein the morphologies of semiconductor oxides and their gas-sensing properties are reviewed. This review also proposes a potential strategy for the enhancement of gas-sensing performance in the future. PMID:29189714

An ultrasensitive method of real time pH monitoring with complementary metal oxide semiconductor image sensor.

PubMed

Devadhasan, Jasmine Pramila; Kim, Sanghyo

2015-02-09

CMOS sensors are becoming a powerful tool in the biological and chemical field. In this work, we introduce a new approach on quantifying various pH solutions with a CMOS image sensor. The CMOS image sensor based pH measurement produces high-accuracy analysis, making it a truly portable and user friendly system. pH indicator blended hydrogel matrix was fabricated as a thin film to the accurate color development. A distinct color change of red, green and blue (RGB) develops in the hydrogel film by applying various pH solutions (pH 1-14). The semi-quantitative pH evolution was acquired by visual read out. Further, CMOS image sensor absorbs the RGB color intensity of the film and hue value converted into digital numbers with the aid of an analog-to-digital converter (ADC) to determine the pH ranges of solutions. Chromaticity diagram and Euclidean distance represent the RGB color space and differentiation of pH ranges, respectively. This technique is applicable to sense the various toxic chemicals and chemical vapors by situ sensing. Ultimately, the entire approach can be integrated into smartphone and operable with the user friendly manner. Copyright © 2014 Elsevier B.V. All rights reserved.

Noise and spectroscopic performance of DEPMOSFET matrix devices for XEUS

NASA Astrophysics Data System (ADS)

Treis, J.; Fischer, P.; Hälker, O.; Herrmann, S.; Kohrs, R.; Krüger, H.; Lechner, P.; Lutz, G.; Peric, I.; Porro, M.; Richter, R. H.; Strüder, L.; Trimpl, M.; Wermes, N.; Wölfel, S.

2005-08-01

DEPMOSFET based Active Pixel Sensor (APS) matrix devices, originally developed to cope with the challenging requirements of the XEUS Wide Field Imager, have proven to be a promising new imager concept for a variety of future X-ray imaging and spectroscopy missions like Simbol-X. The devices combine excellent energy resolution, high speed readout and low power consumption with the attractive feature of random accessibility of pixels. A production of sensor prototypes with 64 x 64 pixels with a size of 75 μm x 75 μm each has recently been finished at the MPI semiconductor laboratory in Munich. The devices are built for row-wise readout and require dedicated control and signal processing electronics of the CAMEX type, which is integrated together with the sensor onto a readout hybrid. A number of hybrids incorporating the most promising sensor design variants has been built, and their performance has been studied in detail. A spectroscopic resolution of 131 eV has been measured, the readout noise is as low as 3.5 e- ENC. Here, the dependence of readout noise and spectroscopic resolution on the device temperature is presented.

Repeat analysis of intraoral digital imaging performed by undergraduate students using a complementary metal oxide semiconductor sensor: An institutional case study

PubMed Central

Rahman, Nur Liyana Abdul; Asri, Amiza Aqiela Ahmad; Othman, Noor Ilyani; Wan Mokhtar, Ilham

2017-01-01

Purpose This study was performed to quantify the repeat rate of imaging acquisitions based on different clinical examinations, and to assess the prevalence of error types in intraoral bitewing and periapical imaging using a digital complementary metal-oxide-semiconductor (CMOS) intraoral sensor. Materials and Methods A total of 8,030 intraoral images were retrospectively collected from 3 groups of undergraduate clinical dental students. The type of examination, stage of the procedure, and reasons for repetition were analysed and recorded. The repeat rate was calculated as the total number of repeated images divided by the total number of examinations. The weighted Cohen's kappa for inter- and intra-observer agreement was used after calibration and prior to image analysis. Results The overall repeat rate on intraoral periapical images was 34.4%. A total of 1,978 repeated periapical images were from endodontic assessment, which included working length estimation (WLE), trial gutta-percha (tGP), obturation, and removal of gutta-percha (rGP). In the endodontic imaging, the highest repeat rate was from WLE (51.9%) followed by tGP (48.5%), obturation (42.2%), and rGP (35.6%). In bitewing images, the repeat rate was 15.1% and poor angulation was identified as the most common cause of error. A substantial level of intra- and interobserver agreement was achieved. Conclusion The repeat rates in this study were relatively high, especially for certain clinical procedures, warranting training in optimization techniques and radiation protection. Repeat analysis should be performed from time to time to enhance quality assurance and hence deliver high-quality health services to patients. PMID:29279822

Ultrasonic fingerprint sensor using a piezoelectric micromachined ultrasonic transducer array integrated with complementary metal oxide semiconductor electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Y.; Fung, S.; Wang, Q.

2015-06-29

This paper presents an ultrasonic fingerprint sensor based on a 24 × 8 array of 22 MHz piezoelectric micromachined ultrasonic transducers (PMUTs) with 100 μm pitch, fully integrated with 180 nm complementary metal oxide semiconductor (CMOS) circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. The array frequency response and vibration mode-shape were characterized using laser Doppler vibrometry and verified via finite element method simulation. The array's acoustic output was measured using a hydrophone to be ∼14 kPa with a 28 V input, in reasonable agreement with predication from analyticalmore » calculation. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20 × 8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D polydimethylsiloxane fingerprint phantom (10 mm × 8 mm) at a 1.2 mm distance from the array.« less

Astronaut Peggy Whitson Installs SUBSA Experiment

NASA Technical Reports Server (NTRS)

2002-01-01

Expedition Five flight engineer Peggy Whitson is shown installing the Solidification Using a Baffle in Sealed Ampoules (SUBSA) experiment in the Microgravity Science Glovebox (MSG) in the Destiny laboratory aboard the International Space Station (ISS). SUBSA examines the solidification of semiconductor crystals from a melted material. Semiconductor crystals are used for many products that touch our everyday lives. They are found in computer chips, integrated circuits, and a multitude of other electronic devices, such as sensors for medical imaging equipment and detectors of nuclear radiation. Materials scientists want to make better semiconductor crystals to be able to further reduce the size of high-tech devices. In the microgravity environment, convection and sedimentation are reduced, so fluids do not remove and deform. Thus, space laboratories provide an ideal environment of studying solidification from the melt. This investigation is expected to determine the mechanism causing fluid motion during production of semiconductors in space. It will provide insight into the role of the melt motion in production of semiconductor crystals, advancing our knowledge of the crystal growth process. This could lead to a reduction of defects in semiconductor crystals produced in space and on Earth.

International Space Station (ISS)

NASA Image and Video Library

2002-07-05

Expedition Five flight engineer Peggy Whitson is shown installing the Solidification Using a Baffle in Sealed Ampoules (SUBSA) experiment in the Microgravity Science Glovebox (MSG) in the Destiny laboratory aboard the International Space Station (ISS). SUBSA examines the solidification of semiconductor crystals from a melted material. Semiconductor crystals are used for many products that touch our everyday lives. They are found in computer chips, integrated circuits, and a multitude of other electronic devices, such as sensors for medical imaging equipment and detectors of nuclear radiation. Materials scientists want to make better semiconductor crystals to be able to further reduce the size of high-tech devices. In the microgravity environment, convection and sedimentation are reduced, so fluids do not remove and deform. Thus, space laboratories provide an ideal environment of studying solidification from the melt. This investigation is expected to determine the mechanism causing fluid motion during production of semiconductors in space. It will provide insight into the role of the melt motion in production of semiconductor crystals, advancing our knowledge of the crystal growth process. This could lead to a reduction of defects in semiconductor crystals produced in space and on Earth.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Streza, M.; Dadarlat, D.; Strzałkowski, K.

An accurate determination of thermophysical properties such as thermal diffusivity, thermal effusivity and thermal conductivity is extremely important for characterization and quality assurance of semiconductors. Thermal diffusivity and effusivity of some binary semiconductors have been investigated. Two experimental techniques were used: a contact technique (PPE calorimetry) and a non contact technique (lock-in thermography). When working with PPE, in the back (BPPE) configuration and in the thermally thick regim of the pyroelectric sensor, we can get the thermal diffusivity of the sample by performing a scanning of the excitation frequency of radiation. Thermal effusivity is obtained in front configuration (sensor directlymore » irradiated and sample in back position) by performing a thickness scan of a coupling fluid. By using the lock-in thermography technique, the thermal diffusivity of the sample is obtained from the phase image. The results obtained by the two techniques are in good agreement. Nevertheless, for the determination of thermal diffusivity, lock-in thermography is preferred.« less

Ageing and proton irradiation damage of a low voltage EMCCD in a CMOS process

NASA Astrophysics Data System (ADS)

Dunford, A.; Stefanov, K.; Holland, A.

2018-02-01

Electron Multiplying Charge Coupled Devices (EMCCDs) have revolutionised low light level imaging, providing highly sensitive detection capabilities. Implementing Electron Multiplication (EM) in Charge Coupled Devices (CCDs) can increase the Signal to Noise Ratio (SNR) and lead to further developments in low light level applications such as improvements in image contrast and single photon imaging. Demand has grown for EMCCD devices with properties traditionally restricted to Complementary Metal-Oxide-Semiconductor (CMOS) image sensors, such as lower power consumption and higher radiation tolerance. However, EMCCDs are known to experience an ageing effect, such that the gain gradually decreases with time. This paper presents results detailing EM ageing in an Electron Multiplying Complementary Metal-Oxide-Semiconductor (EMCMOS) device and its effect on several device characteristics such as Charge Transfer Inefficiency (CTI) and thermal dark signal. When operated at room temperature an average decrease in gain of over 20% after an operational period of 175 hours was detected. With many image sensors deployed in harsh radiation environments, the radiation hardness of the device following proton irradiation was also tested. This paper presents the results of a proton irradiation completed at the Paul Scherrer Institut (PSI) at a 10 MeV equivalent fluence of 4.15× 1010 protons/cm2. The pre-irradiation characterisation, irradiation methodology and post-irradiation results are detailed, demonstrating an increase in dark current and a decrease in its activation energy. Finally, this paper presents a comparison of the damage caused by EM gain ageing and proton irradiation.

Using polynomials to simplify fixed pattern noise and photometric correction of logarithmic CMOS image sensors.

PubMed

Li, Jing; Mahmoodi, Alireza; Joseph, Dileepan

2015-10-16

An important class of complementary metal-oxide-semiconductor (CMOS) image sensors are those where pixel responses are monotonic nonlinear functions of light stimuli. This class includes various logarithmic architectures, which are easily capable of wide dynamic range imaging, at video rates, but which are vulnerable to image quality issues. To minimize fixed pattern noise (FPN) and maximize photometric accuracy, pixel responses must be calibrated and corrected due to mismatch and process variation during fabrication. Unlike literature approaches, which employ circuit-based models of varying complexity, this paper introduces a novel approach based on low-degree polynomials. Although each pixel may have a highly nonlinear response, an approximately-linear FPN calibration is possible by exploiting the monotonic nature of imaging. Moreover, FPN correction requires only arithmetic, and an optimal fixed-point implementation is readily derived, subject to a user-specified number of bits per pixel. Using a monotonic spline, involving cubic polynomials, photometric calibration is also possible without a circuit-based model, and fixed-point photometric correction requires only a look-up table. The approach is experimentally validated with a logarithmic CMOS image sensor and is compared to a leading approach from the literature. The novel approach proves effective and efficient.

Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyu-Tae; Seo, Sungyong; Yong Lee, Jae

We present transmission visible wavelength filters based on strong interference behaviors in an ultrathin semiconductor material between two metal layers. The proposed devices were fabricated on 2 cm × 2 cm glass substrate, and the transmission characteristics show good agreement with the design. Due to a significantly reduced light propagation phase change associated with the ultrathin semiconductor layer and the compensation in phase shift of light reflecting from the metal surface, the filters show an angle insensitive performance up to ±70°, thus, addressing one of the key challenges facing the previously reported photonic and plasmonic color filters. This principle, described in this paper, canmore » have potential for diverse applications ranging from color display devices to the image sensors.« less

An HDR imaging method with DTDI technology for push-broom cameras

NASA Astrophysics Data System (ADS)

Sun, Wu; Han, Chengshan; Xue, Xucheng; Lv, Hengyi; Shi, Junxia; Hu, Changhong; Li, Xiangzhi; Fu, Yao; Jiang, Xiaonan; Huang, Liang; Han, Hongyin

2018-03-01

Conventionally, high dynamic-range (HDR) imaging is based on taking two or more pictures of the same scene with different exposure. However, due to a high-speed relative motion between the camera and the scene, it is hard for this technique to be applied to push-broom remote sensing cameras. For the sake of HDR imaging in push-broom remote sensing applications, the present paper proposes an innovative method which can generate HDR images without redundant image sensors or optical components. Specifically, this paper adopts an area array CMOS (complementary metal oxide semiconductor) with the digital domain time-delay-integration (DTDI) technology for imaging, instead of adopting more than one row of image sensors, thereby taking more than one picture with different exposure. And then a new HDR image by fusing two original images with a simple algorithm can be achieved. By conducting the experiment, the dynamic range (DR) of the image increases by 26.02 dB. The proposed method is proved to be effective and has potential in other imaging applications where there is a relative motion between the cameras and scenes.

Sensor development at the semiconductor laboratory of the Max-Planck-Society

NASA Astrophysics Data System (ADS)

Bähr, A.; Lechner, P.; Ninkovic, J.

2017-12-01

For more than twenty years the semiconductor laboratory of the Max-Planck Society (MPG-HLL) is developing high-performing, specialised, scientific silicon sensors including the integration of amplifying electronics on the sensor chip. This paper summarises the actual status of these devices like pnCCDs and DePFET Active Pixel Sensors and their applications.

Photometric Calibration and Image Stitching for a Large Field of View Multi-Camera System

PubMed Central

Lu, Yu; Wang, Keyi; Fan, Gongshu

2016-01-01

A new compact large field of view (FOV) multi-camera system is introduced. The camera is based on seven tiny complementary metal-oxide-semiconductor sensor modules covering over 160° × 160° FOV. Although image stitching has been studied extensively, sensor and lens differences have not been considered in previous multi-camera devices. In this study, we have calibrated the photometric characteristics of the multi-camera device. Lenses were not mounted on the sensor in the process of radiometric response calibration to eliminate the influence of the focusing effect of uniform light from an integrating sphere. Linearity range of the radiometric response, non-linearity response characteristics, sensitivity, and dark current of the camera response function are presented. The R, G, and B channels have different responses for the same illuminance. Vignetting artifact patterns have been tested. The actual luminance of the object is retrieved by sensor calibration results, and is used to blend images to make panoramas reflect the objective luminance more objectively. This compensates for the limitation of stitching images that are more realistic only through the smoothing method. The dynamic range limitation of can be resolved by using multiple cameras that cover a large field of view instead of a single image sensor with a wide-angle lens. The dynamic range is expanded by 48-fold in this system. We can obtain seven images in one shot with this multi-camera system, at 13 frames per second. PMID:27077857

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

NASA Astrophysics Data System (ADS)

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non-destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including: the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half-maximum (FWHM) across the entire dynamic range, and a noise floor about 20 keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications

PubMed Central

Barber, W. C.; Wessel, J. C.; Nygard, E.; Iwanczyk, J. S.

2014-01-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications. PMID:25937684

Energy dispersive CdTe and CdZnTe detectors for spectral clinical CT and NDT applications.

PubMed

Barber, W C; Wessel, J C; Nygard, E; Iwanczyk, J S

2015-06-01

We are developing room temperature compound semiconductor detectors for applications in energy-resolved high-flux single x-ray photon-counting spectral computed tomography (CT), including functional imaging with nanoparticle contrast agents for medical applications and non destructive testing (NDT) for security applications. Energy-resolved photon-counting can provide reduced patient dose through optimal energy weighting for a particular imaging task in CT, functional contrast enhancement through spectroscopic imaging of metal nanoparticles in CT, and compositional analysis through multiple basis function material decomposition in CT and NDT. These applications produce high input count rates from an x-ray generator delivered to the detector. Therefore, in order to achieve energy-resolved single photon counting in these applications, a high output count rate (OCR) for an energy-dispersive detector must be achieved at the required spatial resolution and across the required dynamic range for the application. The required performance in terms of the OCR, spatial resolution, and dynamic range must be obtained with sufficient field of view (FOV) for the application thus requiring the tiling of pixel arrays and scanning techniques. Room temperature cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) compound semiconductors, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel provided the sensors are designed for rapid signal formation across the x-ray energy ranges of the application at the required energy and spatial resolutions, and at a sufficiently high detective quantum efficiency (DQE). We have developed high-flux energy-resolved photon-counting x-ray imaging array sensors using pixellated CdTe and CdZnTe semiconductors optimized for clinical CT and security NDT. We have also fabricated high-flux ASICs with a two dimensional (2D) array of inputs for readout from the sensors. The sensors are guard ring free and have a 2D array of pixels and can be tiled in 2D while preserving pixel pitch. The 2D ASICs have four energy bins with a linear energy response across sufficient dynamic range for clinical CT and some NDT applications. The ASICs can also be tiled in 2D and are designed to fit within the active area of the sensors. We have measured several important performance parameters including; the output count rate (OCR) in excess of 20 million counts per second per square mm with a minimum loss of counts due to pulse pile-up, an energy resolution of 7 keV full width at half maximum (FWHM) across the entire dynamic range, and a noise floor about 20keV. This is achieved by directly interconnecting the ASIC inputs to the pixels of the CdZnTe sensors incurring very little input capacitance to the ASICs. We present measurements of the performance of the CdTe and CdZnTe sensors including the OCR, FWHM energy resolution, noise floor, as well as the temporal stability and uniformity under the rapidly varying high flux expected in CT and NDT applications.

Batch-processed semiconductor gas sensor array for the selective detection of NOx in automotive exhaust gas

NASA Astrophysics Data System (ADS)

Jang, Hani; Kim, Minki; Kim, Yongjun

2016-12-01

This paper reports on a semiconductor gas sensor array to detect nitrogen oxides (NOx) in automotive exhaust gas. The proposed semiconductor gas sensor array consisted of one common electrode and three individual electrodes to minimize the size of the sensor array, and three sensing layers [TiO2 + SnO2 (15 wt%), SnO2, and Ga2O3] were deposited using screen printing. In addition, sensing materials were sintered under the same conditions in order to take advantage of batch processing. The sensing properties of the proposed sensor array were verified by experimental measurements, and the selectivity improved by using pattern recognition.

Origami silicon optoelectronics for hemispherical electronic eye systems.

PubMed

Zhang, Kan; Jung, Yei Hwan; Mikael, Solomon; Seo, Jung-Hun; Kim, Munho; Mi, Hongyi; Zhou, Han; Xia, Zhenyang; Zhou, Weidong; Gong, Shaoqin; Ma, Zhenqiang

2017-11-24

Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.

IR CMOS: near infrared enhanced digital imaging (Presentation Recording)

NASA Astrophysics Data System (ADS)

Pralle, Martin U.; Carey, James E.; Joy, Thomas; Vineis, Chris J.; Palsule, Chintamani

2015-08-01

SiOnyx has demonstrated imaging at light levels below 1 mLux (moonless starlight) at video frame rates with a 720P CMOS image sensor in a compact, low latency camera. Low light imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancements are achieved by applying Black Silicon, SiOnyx's proprietary ultrafast laser semiconductor processing technology. In the near infrared, silicon's native indirect bandgap results in low absorption coefficients and long absorption lengths. The Black Silicon nanostructured layer fundamentally disrupts this paradigm by enhancing the absorption of light within a thin pixel layer making 5 microns of silicon equivalent to over 300 microns of standard silicon. This results in a demonstrate 10 fold improvements in near infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see spot. Imaging performance metrics will be discussed. Demonstrated performance characteristics: Pixel size : 5.6 and 10 um Array size: 720P/1.3Mpix Frame rate: 60 Hz Read noise: 2 ele/pixel Spectral sensitivity: 400 to 1200 nm (with 10x QE at 1064nm) Daytime imaging: color (Bayer pattern) Nighttime imaging: moonless starlight conditions 1064nm laser imaging: daytime imaging out to 2Km

Megavoltage imaging with a photoconductor based sensor

DOEpatents

Partain, Larry Dean [Los Altos, CA; Zentai, George [Mountain View, CA

2011-02-08

A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.

Semiconductor sensors

NASA Technical Reports Server (NTRS)

Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

1977-01-01

A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

Panoramic thermal imaging: challenges and tradeoffs

NASA Astrophysics Data System (ADS)

Aburmad, Shimon

2014-06-01

Over the past decade, we have witnessed a growing demand for electro-optical systems that can provide continuous 3600 coverage. Applications such as perimeter security, autonomous vehicles, and military warning systems are a few of the most common applications for panoramic imaging. There are several different technological approaches for achieving panoramic imaging. Solutions based on rotating elements do not provide continuous coverage as there is a time lag between updates. Continuous panoramic solutions either use "stitched" images from multiple adjacent sensors, or sophisticated optical designs which warp a panoramic view onto a single sensor. When dealing with panoramic imaging in the visible spectrum, high volume production and advancement of semiconductor technology has enabled the use of CMOS/CCD image sensors with a huge number of pixels, small pixel dimensions, and low cost devices. However, in the infrared spectrum, the growth of detector pixel counts, pixel size reduction, and cost reduction is taking place at a slower rate due to the complexity of the technology and limitations caused by the laws of physics. In this work, we will explore the challenges involved in achieving 3600 panoramic thermal imaging, and will analyze aspects such as spatial resolution, FOV, data complexity, FPA utilization, system complexity, coverage and cost of the different solutions. We will provide illustrations, calculations, and tradeoffs between three solutions evaluated by Opgal: A unique 3600 lens design using an LWIR XGA detector, stitching of three adjacent LWIR sensors equipped with a low distortion 1200 lens, and a fisheye lens with a HFOV of 180º and an XGA sensor.

A wireless narrowband imaging chip for capsule endoscope.

PubMed

Lan-Rong Dung; Yin-Yi Wu

2010-12-01

This paper presents a dual-mode capsule gastrointestinal endoscope device. An endoscope combined with a narrowband image (NBI), has been shown to be a superior diagnostic tool for early stage tissue neoplasms detection. Nevertheless, a wireless capsule endoscope with the narrowband imaging technology has not been presented in the market up to now. The narrowband image acquisition and power dissipation reduction are the main challenges of NBI capsule endoscope. In this paper, we present the first narrowband imaging capsule endoscope that can assist clinical doctors to effectively diagnose early gastrointestinal cancers, profited from our dedicated dual-mode complementary metal-oxide semiconductor (CMOS) sensor. The dedicated dual-mode CMOS sensor can offer white-light and narrowband images. Implementation results show that the proposed 512 × 512 CMOS sensor consumes only 2 mA at a 3-V power supply. The average current of the NBI capsule with an 8-Mb/s RF transmitter is nearly 7 ~ 8 mA that can continuously work for 6 ~ 8 h with two 1.5-V 80-mAh button batteries while the frame rate is 2 fps. Experimental results on backside mucosa of a human tongue and pig's small intestine showed that the wireless NBI capsule endoscope can significantly improve the image quality, compared with a commercial-of-the-shelf capsule endoscope for gastrointestinal tract diagnosis.

Effects of Activation Energy to Transient Response of Semiconductor Gas Sensor

NASA Astrophysics Data System (ADS)

Fujimoto, Akira; Ohtani, Tatsuki

The smell classifiable gas sensor will be desired for many applications such as gas detection alarms, process controls for food production and so on. We have tried to realize the sensor using transient responses of semiconductor gas sensor consisting of tin dioxide and pointed out that the sensor gave us different transient responses for kinds of gas. Results of model calculation showed the activation energy of chemical reaction on the sensor surface strongly depended on the transient response. We tried to estimate the activation energies by molecular orbital calculation with SnO2 Cluster. The results show that there is a liner relationship between the gradient of the transient responses and activation energies for carboxylic and alcoholic gases. Transient response will be predicted from activation energy in the same kind of gas and the smell discrimination by single semiconductor gas sensor will be realized by this relationship.

Micromachined Chip Scale Thermal Sensor for Thermal Imaging.

PubMed

Shekhawat, Gajendra S; Ramachandran, Srinivasan; Jiryaei Sharahi, Hossein; Sarkar, Souravi; Hujsak, Karl; Li, Yuan; Hagglund, Karl; Kim, Seonghwan; Aden, Gary; Chand, Ami; Dravid, Vinayak P

2018-02-27

The lateral resolution of scanning thermal microscopy (SThM) has hitherto never approached that of mainstream atomic force microscopy, mainly due to poor performance of the thermal sensor. Herein, we report a nanomechanical system-based thermal sensor (thermocouple) that enables high lateral resolution that is often required in nanoscale thermal characterization in a wide range of applications. This thermocouple-based probe technology delivers excellent lateral resolution (∼20 nm), extended high-temperature measurements >700 °C without cantilever bending, and thermal sensitivity (∼0.04 °C). The origin of significantly improved figures-of-merit lies in the probe design that consists of a hollow silicon tip integrated with a vertically oriented thermocouple sensor at the apex (low thermal mass) which interacts with the sample through a metallic nanowire (50 nm diameter), thereby achieving high lateral resolution. The efficacy of this approach to SThM is demonstrated by imaging embedded metallic nanostructures in silica core-shell, metal nanostructures coated with polymer films, and metal-polymer interconnect structures. The nanoscale pitch and extremely small thermal mass of the probe promise significant improvements over existing methods and wide range of applications in several fields including semiconductor industry, biomedical imaging, and data storage.

Mechanically induced strong red emission in samarium ions doped piezoelectric semiconductor CaZnOS for dynamic pressure sensing and imaging

NASA Astrophysics Data System (ADS)

Wang, Wei; Peng, Dengfeng; Zhang, Hanlu; Yang, Xiaohong; Pan, Caofeng

2017-07-01

Piezoelectric semiconductor with optical, electrical and mechanical multifunctions has great potential applications in future optoelectronic devices. The rich properties and applications mainly encompass the intrinsic structures and their coupling effects. Here, we report that lanthanide ions doped piezoelectric semiconductor CaZnOS:Sm3+ showing strong red emission induced by dynamic mechanical stress. Under moderate mechanical load, the doped piezoelectric semiconductor exhibits strong visible red emission to the naked eyes even under the day light. A flexible dynamic pressure sensor device is fabricated based on the prepared CaZnOS:Sm3+ powders. The mechanical-induced emission properties of the device are investigated by the optical fiber spectrometer. The linear characteristic emissions are attributed to the 4G5/2→6H5/2 (566 nm), 4G5/2→6H7/2 (580-632 nm), 4G5/2→6H9/2 (653-673 nm) and 4G5/2→6H11/2 (712-735 nm) f-f transitions of Sm3+ ions. The integral emission intensity is proportional to the value of applied pressure. By using the linear relationship between integrated emission intensity and the dynamic pressure, the real-time pressure distribution is visualized and recorded. Our results highlight that the incorporation of lanthanide luminescent ions into piezoelectric semiconductors as smart materials could be applied into the flexible mechanical-optical sensor device without additional auxiliary power, which has great potential for promising applications such as mapping of personalized handwriting, smart display, and human machine interface.

10000 pixels wide CMOS frame imager for earth observation from a HALE UAV

NASA Astrophysics Data System (ADS)

Delauré, B.; Livens, S.; Everaerts, J.; Kleihorst, R.; Schippers, Gert; de Wit, Yannick; Compiet, John; Banachowicz, Bartosz

2009-09-01

MEDUSA is the lightweight high resolution camera, designed to be operated from a solar-powered Unmanned Aerial Vehicle (UAV) flying at stratospheric altitudes. The instrument is a technology demonstrator within the Pegasus program and targets applications such as crisis management and cartography. A special wide swath CMOS imager has been developed by Cypress Semiconductor Cooperation Belgium to meet the specific sensor requirements of MEDUSA. The CMOS sensor has a stitched design comprising a panchromatic and color sensor on the same die. Each sensor consists of 10000*1200 square pixels (5.5μm size, novel 6T architecture) with micro-lenses. The exposure is performed by means of a high efficiency snapshot shutter. The sensor is able to operate at a rate of 30fps in full frame readout. Due to a novel pixel design, the sensor has low dark leakage of the memory elements (PSNL) and low parasitic light sensitivity (PLS). Still it maintains a relative high QE (Quantum efficiency) and a FF (fill factor) of over 65%. It features an MTF (Modulation Transfer Function) higher than 60% at Nyquist frequency in both X and Y directions The measured optical/electrical crosstalk (expressed as MTF) of this 5.5um pixel is state-of-the art. These properties makes it possible to acquire sharp images also in low-light conditions.

Quantum dots in imaging, drug delivery and sensor applications

PubMed Central

Matea, Cristian T; Mocan, Teodora; Tabaran, Flaviu; Pop, Teodora; Mosteanu, Ofelia; Puia, Cosmin; Iancu, Cornel; Mocan, Lucian

2017-01-01

Quantum dots (QDs), also known as nanoscale semiconductor crystals, are nanoparticles with unique optical and electronic properties such as bright and intensive fluorescence. Since most conventional organic label dyes do not offer the near-infrared (>650 nm) emission possibility, QDs, with their tunable optical properties, have gained a lot of interest. They possess characteristics such as good chemical and photo-stability, high quantum yield and size-tunable light emission. Different types of QDs can be excited with the same light wavelength, and their narrow emission bands can be detected simultaneously for multiple assays. There is an increasing interest in the development of nano-theranostics platforms for simultaneous sensing, imaging and therapy. QDs have great potential for such applications, with notable results already published in the fields of sensors, drug delivery and biomedical imaging. This review summarizes the latest developments available in literature regarding the use of QDs for medical applications. PMID:28814860

Quantum dots in imaging, drug delivery and sensor applications.

PubMed

Matea, Cristian T; Mocan, Teodora; Tabaran, Flaviu; Pop, Teodora; Mosteanu, Ofelia; Puia, Cosmin; Iancu, Cornel; Mocan, Lucian

2017-01-01

Quantum dots (QDs), also known as nanoscale semiconductor crystals, are nanoparticles with unique optical and electronic properties such as bright and intensive fluorescence. Since most conventional organic label dyes do not offer the near-infrared (>650 nm) emission possibility, QDs, with their tunable optical properties, have gained a lot of interest. They possess characteristics such as good chemical and photo-stability, high quantum yield and size-tunable light emission. Different types of QDs can be excited with the same light wavelength, and their narrow emission bands can be detected simultaneously for multiple assays. There is an increasing interest in the development of nano-theranostics platforms for simultaneous sensing, imaging and therapy. QDs have great potential for such applications, with notable results already published in the fields of sensors, drug delivery and biomedical imaging. This review summarizes the latest developments available in literature regarding the use of QDs for medical applications.

Active pixel sensor array with multiresolution readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor); Pain, Bedabrata (Inventor)

1999-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Using Polynomials to Simplify Fixed Pattern Noise and Photometric Correction of Logarithmic CMOS Image Sensors

PubMed Central

Li, Jing; Mahmoodi, Alireza; Joseph, Dileepan

2015-01-01

An important class of complementary metal-oxide-semiconductor (CMOS) image sensors are those where pixel responses are monotonic nonlinear functions of light stimuli. This class includes various logarithmic architectures, which are easily capable of wide dynamic range imaging, at video rates, but which are vulnerable to image quality issues. To minimize fixed pattern noise (FPN) and maximize photometric accuracy, pixel responses must be calibrated and corrected due to mismatch and process variation during fabrication. Unlike literature approaches, which employ circuit-based models of varying complexity, this paper introduces a novel approach based on low-degree polynomials. Although each pixel may have a highly nonlinear response, an approximately-linear FPN calibration is possible by exploiting the monotonic nature of imaging. Moreover, FPN correction requires only arithmetic, and an optimal fixed-point implementation is readily derived, subject to a user-specified number of bits per pixel. Using a monotonic spline, involving cubic polynomials, photometric calibration is also possible without a circuit-based model, and fixed-point photometric correction requires only a look-up table. The approach is experimentally validated with a logarithmic CMOS image sensor and is compared to a leading approach from the literature. The novel approach proves effective and efficient. PMID:26501287

Single-photon imaging in complementary metal oxide semiconductor processes

PubMed Central

Charbon, E.

2014-01-01

This paper describes the basics of single-photon counting in complementary metal oxide semiconductors, through single-photon avalanche diodes (SPADs), and the making of miniaturized pixels with photon-counting capability based on SPADs. Some applications, which may take advantage of SPAD image sensors, are outlined, such as fluorescence-based microscopy, three-dimensional time-of-flight imaging and biomedical imaging, to name just a few. The paper focuses on architectures that are best suited to those applications and the trade-offs they generate. In this context, architectures are described that efficiently collect the output of single pixels when designed in large arrays. Off-chip readout circuit requirements are described for a variety of applications in physics, medicine and the life sciences. Owing to the dynamic nature of SPADs, designs featuring a large number of SPADs require careful analysis of the target application for an optimal use of silicon real estate and of limited readout bandwidth. The paper also describes the main trade-offs involved in architecting such chips and the solutions adopted with focus on scalability and miniaturization. PMID:24567470

Application of polymer-coated metal-insulator-semiconductor sensors for the detection of dissolved hydrogen

NASA Astrophysics Data System (ADS)

Li, Dongmei; Medlin, J. W.; Bastasz, R.

2006-06-01

The detection of dissolved hydrogen in liquids is crucial to many industrial applications, such as fault detection for oil-filled electrical equipment. To enhance the performance of metal-insulator-semiconductor (MIS) sensors for dissolved hydrogen detection, a palladium MIS sensor has been modified by depositing a polyimide (PI) layer above the palladium surface. Response measurements of the PI-coated sensors in mineral oil indicate that hydrogen is sensitively detected, while the effect of interfering gases on sensor response is minimized.

Flexible distributed architecture for semiconductor process control and experimentation

NASA Astrophysics Data System (ADS)

Gower, Aaron E.; Boning, Duane S.; McIlrath, Michael B.

1997-01-01

Semiconductor fabrication requires an increasingly expensive and integrated set of tightly controlled processes, driving the need for a fabrication facility with fully computerized, networked processing equipment. We describe an integrated, open system architecture enabling distributed experimentation and process control for plasma etching. The system was developed at MIT's Microsystems Technology Laboratories and employs in-situ CCD interferometry based analysis in the sensor-feedback control of an Applied Materials Precision 5000 Plasma Etcher (AME5000). Our system supports accelerated, advanced research involving feedback control algorithms, and includes a distributed interface that utilizes the internet to make these fabrication capabilities available to remote users. The system architecture is both distributed and modular: specific implementation of any one task does not restrict the implementation of another. The low level architectural components include a host controller that communicates with the AME5000 equipment via SECS-II, and a host controller for the acquisition and analysis of the CCD sensor images. A cell controller (CC) manages communications between these equipment and sensor controllers. The CC is also responsible for process control decisions; algorithmic controllers may be integrated locally or via remote communications. Finally, a system server images connections from internet/intranet (web) based clients and uses a direct link with the CC to access the system. Each component communicates via a predefined set of TCP/IP socket based messages. This flexible architecture makes integration easier and more robust, and enables separate software components to run on the same or different computers independent of hardware or software platform.

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity

PubMed Central

Zhang, Fan; Niu, Hanben

2016-01-01

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. PMID:27367699

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

PubMed

Zhang, Fan; Niu, Hanben

2016-06-29

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 10⁷ when illuminated by a 405-nm diode laser and 1/1.4 × 10⁴ when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e(-) rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena.

Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor.

PubMed

Griffiths, J A; Chen, D; Turchetta, R; Royle, G J

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 10(3) to 1.6 at a gain of 3.93 × 10(1). The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 10(3), dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

Characterization study of an intensified complementary metal-oxide-semiconductor active pixel sensor

NASA Astrophysics Data System (ADS)

Griffiths, J. A.; Chen, D.; Turchetta, R.; Royle, G. J.

2011-03-01

An intensified CMOS active pixel sensor (APS) has been constructed for operation in low-light-level applications: a high-gain, fast-light decay image intensifier has been coupled via a fiber optic stud to a prototype "VANILLA" APS, developed by the UK based MI3 consortium. The sensor is capable of high frame rates and sparse readout. This paper presents a study of the performance parameters of the intensified VANILLA APS system over a range of image intensifier gain levels when uniformly illuminated with 520 nm green light. Mean-variance analysis shows the APS saturating around 3050 Digital Units (DU), with the maximum variance increasing with increasing image intensifier gain. The system's quantum efficiency varies in an exponential manner from 260 at an intensifier gain of 7.45 × 103 to 1.6 at a gain of 3.93 × 101. The usable dynamic range of the system is 60 dB for intensifier gains below 1.8 × 103, dropping to around 40 dB at high gains. The conclusion is that the system shows suitability for the desired application.

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

2005-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering

PubMed Central

Mars, Kamel; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro

2017-01-01

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system. PMID:29120358

Label-Free Biomedical Imaging Using High-Speed Lock-In Pixel Sensor for Stimulated Raman Scattering.

PubMed

Mars, Kamel; Lioe, De Xing; Kawahito, Shoji; Yasutomi, Keita; Kagawa, Keiichiro; Yamada, Takahiro; Hashimoto, Mamoru

2017-11-09

Raman imaging eliminates the need for staining procedures, providing label-free imaging to study biological samples. Recent developments in stimulated Raman scattering (SRS) have achieved fast acquisition speed and hyperspectral imaging. However, there has been a problem of lack of detectors suitable for MHz modulation rate parallel detection, detecting multiple small SRS signals while eliminating extremely strong offset due to direct laser light. In this paper, we present a complementary metal-oxide semiconductor (CMOS) image sensor using high-speed lock-in pixels for stimulated Raman scattering that is capable of obtaining the difference of Stokes-on and Stokes-off signal at modulation frequency of 20 MHz in the pixel before reading out. The generated small SRS signal is extracted and amplified in a pixel using a high-speed and large area lateral electric field charge modulator (LEFM) employing two-step ion implantation and an in-pixel pair of low-pass filter, a sample and hold circuit and a switched capacitor integrator using a fully differential amplifier. A prototype chip is fabricated using 0.11 μm CMOS image sensor technology process. SRS spectra and images of stearic acid and 3T3-L1 samples are successfully obtained. The outcomes suggest that hyperspectral and multi-focus SRS imaging at video rate is viable after slight modifications to the pixel architecture and the acquisition system.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

1995-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Active pixel sensor with intra-pixel charge transfer

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

2004-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Review of current neutron detection systems for emergency response

DOE PAGES

Mukhopadhyay, Sanjoy; Maurer, Richard; Guss, Paul; ...

2014-09-05

Neutron detectors are utilized in a myriad of applications—from safeguarding special nuclear materials (SNM) to determining lattice spacing in soft materials. The transformational changes taking place in neutron detection and imaging techniques in the last few years are largely being driven by the global shortage of helium-3 ( 3He). This article reviews the status of neutron sensors used specifically for SNM detection in radiological emergency response. These neutron detectors must be highly efficient, be rugged, have fast electronics to measure neutron multiplicity, and be capable of measuring direction of the neutron sources and possibly image them with high spatial resolution.more » Neutron detection is an indirect physical process: neutrons react with nuclei in materials to initiate the release of one or more charged particles that produce electric signals that can be processed by the detection system. Therefore, neutron detection requires conversion materials as active elements of the detection system; these materials may include boron-10 ( 10B), lithium-6 ( 6Li), and gadollinium-157 ( 157Gd), to name a few, but the number of materials available for neutron detection is limited. However, in recent years, pulse-shape-discriminating plastic scintillators, scintillators made of helium-4 ( 4He) under high pressure, pillar and trench semiconductor diodes, and exotic semiconductor neutron detectors made from uranium oxide and other materials have widely expanded the parameter space in neutron detection methodology. In this article we will pay special attention to semiconductor-based neutron sensors. Finally, modern microfabricated nanotubes covered inside with neutron converter materials and with very high aspect ratios for better charge transport will be discussed.« less

Review of current neutron detection systems for emergency response

NASA Astrophysics Data System (ADS)

Mukhopadhyay, Sanjoy; Maurer, Richard; Guss, Paul; Kruschwitz, Craig

2014-09-01

Neutron detectors are used in a myriad of applications—from safeguarding special nuclear materials (SNM) to determining lattice spacing in soft materials. The transformational changes taking place in neutron detection and imaging techniques in the last few years are largely being driven by the global shortage of helium-3 (3He). This article reviews the status of neutron sensors used specifically for SNM detection in radiological emergency response. These neutron detectors must be highly efficient, be rugged, have fast electronics to measure neutron multiplicity, and be capable of measuring direction of the neutron sources and possibly image them with high spatial resolution. Neutron detection is an indirect physical process: neutrons react with nuclei in materials to initiate the release of one or more charged particles that produce electric signals that can be processed by the detection system. Therefore, neutron detection requires conversion materials as active elements of the detection system; these materials may include boron-10 (10B), lithium-6 (6Li), and gadollinium-157 (157Gd), to name a few, but the number of materials available for neutron detection is limited. However, in recent years, pulse-shape-discriminating plastic scintillators, scintillators made of helium-4 (4He) under high pressure, pillar and trench semiconductor diodes, and exotic semiconductor neutron detectors made from uranium oxide and other materials have widely expanded the parameter space in neutron detection methodology. In this article we will pay special attention to semiconductor-based neutron sensors. Modern microfabricated nanotubes covered inside with neutron converter materials and with very high aspect ratios for better charge transport will be discussed.

Luminance compensation for AMOLED displays using integrated MIS sensors

NASA Astrophysics Data System (ADS)

Vygranenko, Yuri; Fernandes, Miguel; Louro, Paula; Vieira, Manuela

2017-05-01

Active-matrix organic light-emitting diodes (AMOLEDs) are ideal for future TV applications due to their ability to faithfully reproduce real images. However, pixel luminance can be affected by instability of driver TFTs and aging effect in OLEDs. This paper reports on a pixel driver utilizing a metal-insulator-semiconductor (MIS) sensor for luminance control of the OLED element. In the proposed pixel architecture for bottom-emission AMOLEDs, the embedded MIS sensor shares the same layer stack with back-channel etched a Si:H TFTs to maintain the fabrication simplicity. The pixel design for a large-area HD display is presented. The external electronics performs image processing to modify incoming video using correction parameters for each pixel in the backplane, and also sensor data processing to update the correction parameters. The luminance adjusting algorithm is based on realistic models for pixel circuit elements to predict the relation between the programming voltage and OLED luminance. SPICE modeling of the sensing part of the backplane is performed to demonstrate its feasibility. Details on the pixel circuit functionality including the sensing and programming operations are also discussed.

Thermal design of the hard x-ray imager and the soft gamma-ray detector onboard ASTRO-H

NASA Astrophysics Data System (ADS)

Noda, Hirofumi; Nakazawa, Kazuhiro; Makishima, Kazuo; Iwata, Naoko; Ogawa, Hiroyuki; Ohta, Masayuki; Sato, Goro; Kawaharada, Madoka; Watanabe, Shin; Kokubun, Motohide; Takahashi, Tadayuki; Ohno, Masanori; Fukazawa, Yasushi; Tajima, Hiroyasu; Uchiyama, Hideki; Ito, Shuji; Fukuzawa, Keita

2014-07-01

The Hard X-ray Imager and the Soft Gamma-ray Detector, onboard the 6th Japanese X-ray satellite ASTRO-H, aim at unprecedentedly-sensitive observations in the 5-80 keV and 40-600 keV bands, respectively. Because their main sensors are composed of a number of semi-conductor devices, which need to be operated in a temperature of -20 to -15°C, heat generated in the sensors must be efficiently transported outwards by thermal conduction. For this purpose, we performed thermal design, with the following three steps. First, we additionally included thermally-conductive parts, copper poles and graphite sheets. Second, constructing a thermal mathematical model of the sensors, we estimated temperature distributions in thermal equilibria. Since the model had rather large uncertainties in contact thermal conductions, an accurate thermal dummy was constructed as our final step. Vacuum measurement with the dummy successfully reduced the conductance uncertainties. With these steps, we confirmed that our thermal design of the main sensors satisfies the temperature requirement.

Highly Sensitive and Very Stretchable Strain Sensor Based on a Rubbery Semiconductor.

PubMed

Kim, Hae-Jin; Thukral, Anish; Yu, Cunjiang

2018-02-07

There is a growing interest in developing stretchable strain sensors to quantify the large mechanical deformation and strain associated with the activities for a wide range of species, such as humans, machines, and robots. Here, we report a novel stretchable strain sensor entirely in a rubber format by using a solution-processed rubbery semiconductor as the sensing material to achieve high sensitivity, large mechanical strain tolerance, and hysteresis-less and highly linear responses. Specifically, the rubbery semiconductor exploits π-π stacked poly(3-hexylthiophene-2,5-diyl) nanofibrils (P3HT-NFs) percolated in silicone elastomer of poly(dimethylsiloxane) to yield semiconducting nanocomposite with a large mechanical stretchability, although P3HT is a well-known nonstretchable semiconductor. The fabricated strain sensors exhibit reliable and reversible sensing capability, high gauge factor (gauge factor = 32), high linearity (R 2 > 0.996), and low hysteresis (degree of hysteresis <12%) responses at the mechanical strain of up to 100%. A strain sensor in this format can be scalably manufactured and implemented as wearable smart gloves. Systematic investigations in the materials design and synthesis, sensor fabrication and characterization, and mechanical analysis reveal the key fundamental and application aspects of the highly sensitive and very stretchable strain sensors entirely from rubbers.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, James W.

1996-01-01

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

A novel CMOS image sensor system for quantitative loop-mediated isothermal amplification assays to detect food-borne pathogens.

PubMed

Wang, Tiantian; Kim, Sanghyo; An, Jeong Ho

2017-02-01

Loop-mediated isothermal amplification (LAMP) is considered as one of the alternatives to the conventional PCR and it is an inexpensive portable diagnostic system with minimal power consumption. The present work describes the application of LAMP in real-time photon detection and quantitative analysis of nucleic acids integrated with a disposable complementary-metal-oxide semiconductor (CMOS) image sensor. This novel system works as an amplification-coupled detection platform, relying on a CMOS image sensor, with the aid of a computerized circuitry controller for the temperature and light sources. The CMOS image sensor captures the light which is passing through the sensor surface and converts into digital units using an analog-to-digital converter (ADC). This new system monitors the real-time photon variation, caused by the color changes during amplification. Escherichia coli O157 was used as a proof-of-concept target for quantitative analysis, and compared with the results for Staphylococcus aureus and Salmonella enterica to confirm the efficiency of the system. The system detected various DNA concentrations of E. coli O157 in a short time (45min), with a detection limit of 10fg/μL. The low-cost, simple, and compact design, with low power consumption, represents a significant advance in the development of a portable, sensitive, user-friendly, real-time, and quantitative analytic tools for point-of-care diagnosis. Copyright © 2016 Elsevier B.V. All rights reserved.

Defense Industrial Base Assessment: U.S. Imaging and Sensors Industry

DTIC Science & Technology

2006-10-01

uncooled devices, but provide much higher resolution. The semiconductor material used in the detector is typically mercury cadmium telluride (HgCdTe...The material principally used in the arrays was mercury cadmium telluride (HgCdTe). Generation 2 detectors significantly improved the signal-to...Silicide (PtSi), Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AlGaAs), Mercury Cadmium Telluride (HgCdTe), Indium Gallium Arsenide (InGaAs

Characterization of a smartphone camera's response to ultraviolet A radiation.

PubMed

Igoe, Damien; Parisi, Alfio; Carter, Brad

2013-01-01

As part of a wider study into the use of smartphones as solar ultraviolet radiation monitors, this article characterizes the ultraviolet A (UVA; 320-400 nm) response of a consumer complementary metal oxide semiconductor (CMOS)-based smartphone image sensor in a controlled laboratory environment. The CMOS image sensor in the camera possesses inherent sensitivity to UVA, and despite the attenuation due to the lens and neutral density and wavelength-specific bandpass filters, the measured relative UVA irradiances relative to the incident irradiances range from 0.0065% at 380 nm to 0.0051% at 340 nm. In addition, the sensor demonstrates a predictable response to low-intensity discrete UVA stimuli that can be modelled using the ratio of recorded digital values to the incident UVA irradiance for a given automatic exposure time, and resulting in measurement errors that are typically less than 5%. Our results support the idea that smartphones can be used for scientific monitoring of UVA radiation. © 2012 Wiley Periodicals, Inc. Photochemistry and Photobiology © 2012 The American Society of Photobiology.

Column-parallel correlated multiple sampling circuits for CMOS image sensors and their noise reduction effects.

PubMed

Suh, Sungho; Itoh, Shinya; Aoyama, Satoshi; Kawahito, Shoji

2010-01-01

For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e(-) for the simple integration CMS and 75 dB and 2.2 e(-) for the folding integration CMS, respectively, are obtained.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1996-08-20

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

Designing a practical system for spectral imaging of skylight.

PubMed

López-Alvarez, Miguel A; Hernández-Andrés, Javier; Romero, Javier; Lee, Raymond L

2005-09-20

In earlier work [J. Opt. Soc. Am. A 21, 13-23 (2004)], we showed that a combination of linear models and optimum Gaussian sensors obtained by an exhaustive search can recover daylight spectra reliably from broadband sensor data. Thus our algorithm and sensors could be used to design an accurate, relatively inexpensive system for spectral imaging of daylight. Here we improve our simulation of the multispectral system by (1) considering the different kinds of noise inherent in electronic devices such as change-coupled devices (CCDs) or complementary metal-oxide semiconductors (CMOS) and (2) extending our research to a different kind of natural illumination, skylight. Because exhaustive searches are expensive computationally, here we switch to a simulated annealing algorithm to define the optimum sensors for recovering skylight spectra. The annealing algorithm requires us to minimize a single cost function, and so we develop one that calculates both the spectral and colorimetric similarity of any pair of skylight spectra. We show that the simulated annealing algorithm yields results similar to the exhaustive search but with much less computational effort. Our technique lets us study the properties of optimum sensors in the presence of noise, one side effect of which is that adding more sensors may not improve the spectral recovery.

Improving the uniformity of luminous system in radial imaging capsule endoscope system

NASA Astrophysics Data System (ADS)

Ou-Yang, Mang; Jeng, Wei-De

2013-02-01

This study concerns the illumination system in a radial imaging capsule endoscope (RICE). Uniformly illuminating the object is difficult because the intensity of the light from the light emitting diodes (LEDs) varies with angular displacement. When light is emitted from the surface of the LED, it first encounters the cone mirror, from which it is reflected, before directly passing through the lenses and complementary metal oxide semiconductor (CMOS) sensor. The light that is strongly reflected from the transparent view window (TVW) propagates again to the cone mirror, to be reflected and to pass through the lenses and CMOS sensor. The above two phenomena cause overblooming on the image plane. Overblooming causes nonuniform illumination on the image plane and consequently reduced image quality. In this work, optical design software was utilized to construct a photometric model for the optimal design of the LED illumination system. Based on the original RICE model, this paper proposes an optimal design to improve the uniformity of the illumination. The illumination uniformity in the RICE is increased from its original value of 0.128 to 0.69, greatly improving light uniformity.

CMOS Cell Sensors for Point-of-Care Diagnostics

PubMed Central

Adiguzel, Yekbun; Kulah, Haluk

2012-01-01

The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies. PMID:23112587

CMOS cell sensors for point-of-care diagnostics.

PubMed

Adiguzel, Yekbun; Kulah, Haluk

2012-01-01

The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies.

Machine Learning Based Single-Frame Super-Resolution Processing for Lensless Blood Cell Counting

PubMed Central

Huang, Xiwei; Jiang, Yu; Liu, Xu; Xu, Hang; Han, Zhi; Rong, Hailong; Yang, Haiping; Yan, Mei; Yu, Hao

2016-01-01

A lensless blood cell counting system integrating microfluidic channel and a complementary metal oxide semiconductor (CMOS) image sensor is a promising technique to miniaturize the conventional optical lens based imaging system for point-of-care testing (POCT). However, such a system has limited resolution, making it imperative to improve resolution from the system-level using super-resolution (SR) processing. Yet, how to improve resolution towards better cell detection and recognition with low cost of processing resources and without degrading system throughput is still a challenge. In this article, two machine learning based single-frame SR processing types are proposed and compared for lensless blood cell counting, namely the Extreme Learning Machine based SR (ELMSR) and Convolutional Neural Network based SR (CNNSR). Moreover, lensless blood cell counting prototypes using commercial CMOS image sensors and custom designed backside-illuminated CMOS image sensors are demonstrated with ELMSR and CNNSR. When one captured low-resolution lensless cell image is input, an improved high-resolution cell image will be output. The experimental results show that the cell resolution is improved by 4×, and CNNSR has 9.5% improvement over the ELMSR on resolution enhancing performance. The cell counting results also match well with a commercial flow cytometer. Such ELMSR and CNNSR therefore have the potential for efficient resolution improvement in lensless blood cell counting systems towards POCT applications. PMID:27827837

Estimation of the limit of detection in semiconductor gas sensors through linearized calibration models.

PubMed

Burgués, Javier; Jiménez-Soto, Juan Manuel; Marco, Santiago

2018-07-12

The limit of detection (LOD) is a key figure of merit in chemical sensing. However, the estimation of this figure of merit is hindered by the non-linear calibration curve characteristic of semiconductor gas sensor technologies such as, metal oxide (MOX), gasFETs or thermoelectric sensors. Additionally, chemical sensors suffer from cross-sensitivities and temporal stability problems. The application of the International Union of Pure and Applied Chemistry (IUPAC) recommendations for univariate LOD estimation in non-linear semiconductor gas sensors is not straightforward due to the strong statistical requirements of the IUPAC methodology (linearity, homoscedasticity, normality). Here, we propose a methodological approach to LOD estimation through linearized calibration models. As an example, the methodology is applied to the detection of low concentrations of carbon monoxide using MOX gas sensors in a scenario where the main source of error is the presence of uncontrolled levels of humidity. Copyright © 2018 Elsevier B.V. All rights reserved.

Sensors, nano-electronics and photonics for the Army of 2030 and beyond

NASA Astrophysics Data System (ADS)

Perconti, Philip; Alberts, W. C. K.; Bajaj, Jagmohan; Schuster, Jonathan; Reed, Meredith

2016-02-01

The US Army's future operating concept will rely heavily on sensors, nano-electronics and photonics technologies to rapidly develop situational understanding in challenging and complex environments. Recent technology breakthroughs in integrated 3D multiscale semiconductor modeling (from atoms-to-sensors), combined with ARL's Open Campus business model for collaborative research provide a unique opportunity to accelerate the adoption of new technology for reduced size, weight, power, and cost of Army equipment. This paper presents recent research efforts on multi-scale modeling at the US Army Research Laboratory (ARL) and proposes the establishment of a modeling consortium or center for semiconductor materials modeling. ARL's proposed Center for Semiconductor Materials Modeling brings together government, academia, and industry in a collaborative fashion to continuously push semiconductor research forward for the mutual benefit of all Army partners.

Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

PubMed Central

Kasap, Safa; Frey, Joel B.; Belev, George; Tousignant, Olivier; Mani, Habib; Greenspan, Jonathan; Laperriere, Luc; Bubon, Oleksandr; Reznik, Alla; DeCrescenzo, Giovanni; Karim, Karim S.; Rowlands, John A.

2011-01-01

In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs). We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se) has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE). Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF) and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the HARP has been recently demonstrated with excellent avalanche gains; the latter is expected to lead to a number of novel imaging device applications that would be quantum noise limited. While passive pixel sensors use one TFT (thin film transistor) as a switch at the pixel, active pixel sensors (APSs) have two or more transistors and provide gain at the pixel level. The advantages of APS based x-ray imagers are also discussed with examples. PMID:22163893

Silicon carbide novel optical sensor for combustion systems and nuclear reactors

NASA Astrophysics Data System (ADS)

Lim, Geunsik; Kar, Aravinda

2014-09-01

Crystalline silicon carbide is a wide bandgap semiconductor material with excellent optical properties, chemical inertness, radiation hardness and high mechanical strength at high temperatures. It is an excellent material platform for sensor applications in harsh environments such as combustion systems and nuclear reactors. A laser doping technique is used to fabricate SiC sensors for different combustion gases such as CO2, CO, NO and NO2. The sensor operates based on the principle of semiconductor optics, producing optical signal in contrast to conventional electrical sensors that produces electrical signal. The sensor response is measured with a low power He-Ne or diode laser.

Real-time object tracking based on scale-invariant features employing bio-inspired hardware.

PubMed

Yasukawa, Shinsuke; Okuno, Hirotsugu; Ishii, Kazuo; Yagi, Tetsuya

2016-09-01

We developed a vision sensor system that performs a scale-invariant feature transform (SIFT) in real time. To apply the SIFT algorithm efficiently, we focus on a two-fold process performed by the visual system: whole-image parallel filtering and frequency-band parallel processing. The vision sensor system comprises an active pixel sensor, a metal-oxide semiconductor (MOS)-based resistive network, a field-programmable gate array (FPGA), and a digital computer. We employed the MOS-based resistive network for instantaneous spatial filtering and a configurable filter size. The FPGA is used to pipeline process the frequency-band signals. The proposed system was evaluated by tracking the feature points detected on an object in a video. Copyright © 2016 Elsevier Ltd. All rights reserved.

Cameras Reveal Elements in the Short Wave Infrared

NASA Technical Reports Server (NTRS)

2010-01-01

Goodrich ISR Systems Inc. (formerly Sensors Unlimited Inc.), based out of Princeton, New Jersey, received Small Business Innovation Research (SBIR) contracts from the Jet Propulsion Laboratory, Marshall Space Flight Center, Kennedy Space Center, Goddard Space Flight Center, Ames Research Center, Stennis Space Center, and Langley Research Center to assist in advancing and refining indium gallium arsenide imaging technology. Used on the Lunar Crater Observation and Sensing Satellite (LCROSS) mission in 2009 for imaging the short wave infrared wavelengths, the technology has dozens of applications in military, security and surveillance, machine vision, medical, spectroscopy, semiconductor inspection, instrumentation, thermography, and telecommunications.

Potentiometric Dye Imaging for Pheochromocytoma and Cortical Neurons with a Novel Measurement System Using an Integrated Complementary Metal-Oxide-Semiconductor Imaging Device

NASA Astrophysics Data System (ADS)

Kobayashi, Takuma; Tagawa, Ayato; Noda, Toshihiko; Sasagawa, Kiyotaka; Tokuda, Takashi; Hatanaka, Yumiko; Tamura, Hideki; Ishikawa, Yasuyuki; Shiosaka, Sadao; Ohta, Jun

2010-11-01

The combination of optical imaging with voltage-sensitive dyes is a powerful tool for studying the spatiotemporal patterns of neural activity and understanding the neural networks of the brain. To visualize the potential status of multiple neurons simultaneously using a compact instrument with high density and a wide range, we present a novel measurement system using an implantable biomedical photonic LSI device with a red absorptive light filter for voltage-sensitive dye imaging (BpLSI-red). The BpLSI-red was developed for sensing fluorescence by the on-chip LSI, which was designed by using complementary metal-oxide-semiconductor (CMOS) technology. A micro-electro-mechanical system (MEMS) microfabrication technique was used to postprocess the CMOS sensor chip; light-emitting diodes (LEDs) were integrated for illumination and to enable long-term cell culture. Using the device, we succeeded in visualizing the membrane potential of 2000-3000 cells and the process of depolarization of pheochromocytoma cells (PC12 cells) and mouse cerebral cortical neurons in a primary culture with cellular resolution. Therefore, our measurement application enables the detection of multiple neural activities simultaneously.

Spatial optical crosstalk in CMOS image sensors integrated with plasmonic color filters.

PubMed

Yu, Yan; Chen, Qin; Wen, Long; Hu, Xin; Zhang, Hui-Fang

2015-08-24

Imaging resolution of complementary metal oxide semiconductor (CMOS) image sensor (CIS) keeps increasing to approximately 7k × 4k. As a result, the pixel size shrinks down to sub-2μm, which greatly increases the spatial optical crosstalk. Recently, plasmonic color filter was proposed as an alternative to conventional colorant pigmented ones. However, there is little work on its size effect and the spatial optical crosstalk in a model of CIS. By numerical simulation, we investigate the size effect of nanocross array plasmonic color filters and analyze the spatial optical crosstalk of each pixel in a Bayer array of a CIS with a pixel size of 1μm. It is found that the small pixel size deteriorates the filtering performance of nanocross color filters and induces substantial spatial color crosstalk. By integrating the plasmonic filters in the low Metal layer in standard CMOS process, the crosstalk reduces significantly, which is compatible to pigmented filters in a state-of-the-art backside illumination CIS.

Chemoresistive gas sensor

DOEpatents

Hirschfeld, T.B.

1985-09-30

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron tunneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

Chemoresistive gas sensor

DOEpatents

Hirschfeld, Tomas B.

1987-01-01

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner.

Chemoresistive gas sensor

DOEpatents

Hirschfeld, T.B.

1987-06-23

A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.

Determination of chlorine concentration using single temperature modulated semiconductor gas sensor

NASA Astrophysics Data System (ADS)

Woźniak, Ł.; Kalinowski, P.; Jasiński, G.; Jasiński, P.

2016-11-01

A periodic temperature modulation using sinusoidal heater voltage was applied to a commercial SnO2 semiconductor gas sensor. Resulting resistance response of the sensor was analyzed using a feature extraction method based on Fast Fourier Transformation (FFT). The amplitudes of the higher harmonics of the FFT from the dynamic nonlinear responses of measured gas were further utilized as an input for Artificial Neuron Network (ANN). Determination of the concentration of chlorine was performed. Moreover, this work evaluates the sensor performance upon sinusoidal temperature modulation.

Introduction to the virtual special issue on super-resolution imaging techniques

NASA Astrophysics Data System (ADS)

Cao, Liangcai; Liu, Zhengjun

2017-12-01

Until quite recently, the resolution of optical imaging instruments, including telescopes, cameras and microscopes, was considered to be limited by the diffraction of light and by image sensors. In the past few years, many exciting super-resolution approaches have emerged that demonstrate intriguing ways to bypass the classical limit in optics and detectors. More and more research groups are engaged in the study of advanced super-resolution schemes, devices, algorithms, systems, and applications [1-6]. Super-resolution techniques involve new methods in science and engineering of optics [7,8], measurements [9,10], chemistry [11,12] and information [13,14]. Promising applications, particularly in biomedical research and semiconductor industry, have been successfully demonstrated.

High frame rate imaging systems developed in Northwest Institute of Nuclear Technology

NASA Astrophysics Data System (ADS)

Li, Binkang; Wang, Kuilu; Guo, Mingan; Ruan, Linbo; Zhang, Haibing; Yang, Shaohua; Feng, Bing; Sun, Fengrong; Chen, Yanli

2007-01-01

This paper presents high frame rate imaging systems developed in Northwest Institute of Nuclear Technology in recent years. Three types of imaging systems are included. The first type of system utilizes EG&G RETICON Photodiode Array (PDA) RA100A as the image sensor, which can work at up to 1000 frame per second (fps). Besides working continuously, the PDA system is also designed to switch to capture flash light event working mode. A specific time sequence is designed to satisfy this request. The camera image data can be transmitted to remote area by coaxial or optic fiber cable and then be stored. The second type of imaging system utilizes PHOTOBIT Complementary Metal Oxygen Semiconductor (CMOS) PB-MV13 as the image sensor, which has a high resolution of 1280 (H) ×1024 (V) pixels per frame. The CMOS system can operate at up to 500fps in full frame and 4000fps partially. The prototype scheme of the system is presented. The third type of imaging systems adopts charge coupled device (CCD) as the imagers. MINTRON MTV-1881EX, DALSA CA-D1 and CA-D6 camera head are used in the systems development. The features comparison of the RA100A, PB-MV13, and CA-D6 based systems are given in the end.

Design and image-quality performance of high resolution CMOS-based X-ray imaging detectors for digital mammography

NASA Astrophysics Data System (ADS)

Cha, B. K.; Kim, J. Y.; Kim, Y. J.; Yun, S.; Cho, G.; Kim, H. K.; Seo, C.-W.; Jeon, S.; Huh, Y.

2012-04-01

In digital X-ray imaging systems, X-ray imaging detectors based on scintillating screens with electronic devices such as charge-coupled devices (CCDs), thin-film transistors (TFT), complementary metal oxide semiconductor (CMOS) flat panel imagers have been introduced for general radiography, dental, mammography and non-destructive testing (NDT) applications. Recently, a large-area CMOS active-pixel sensor (APS) in combination with scintillation films has been widely used in a variety of digital X-ray imaging applications. We employed a scintillator-based CMOS APS image sensor for high-resolution mammography. In this work, both powder-type Gd2O2S:Tb and a columnar structured CsI:Tl scintillation screens with various thicknesses were fabricated and used as materials to convert X-ray into visible light. These scintillating screens were directly coupled to a CMOS flat panel imager with a 25 × 50 mm2 active area and a 48 μm pixel pitch for high spatial resolution acquisition. We used a W/Al mammographic X-ray source with a 30 kVp energy condition. The imaging characterization of the X-ray detector was measured and analyzed in terms of linearity in incident X-ray dose, modulation transfer function (MTF), noise-power spectrum (NPS) and detective quantum efficiency (DQE).

Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

PubMed Central

Fine, George F.; Cavanagh, Leon M.; Afonja, Ayo; Binions, Russell

2010-01-01

Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and quick response times. They have been used extensively to measure and monitor trace amounts of environmentally important gases such as carbon monoxide and nitrogen dioxide. In this review the nature of the gas response and how it is fundamentally linked to surface structure is explored. Synthetic routes to metal oxide semiconductor gas sensors are also discussed and related to their affect on surface structure. An overview of important contributions and recent advances are discussed for the use of metal oxide semiconductor sensors for the detection of a variety of gases—CO, NOx, NH3 and the particularly challenging case of CO2. Finally a description of recent advances in work completed at University College London is presented including the use of selective zeolites layers, new perovskite type materials and an innovative chemical vapour deposition approach to film deposition. PMID:22219672

Advanced Multipurpose Rendezvous Tracking System Study

NASA Technical Reports Server (NTRS)

Laurie, R. J.; Sterzer, F.

1982-01-01

Rendezvous and docking (R&D) sensors needed to support Earth orbital operations of vehicles were investigated to determine the form they should take. An R&D sensor must enable an interceptor vehicle to determine both the relative position and the relative attitude of a target vehicle. Relative position determination is fairly straightforward and places few constraints on the sensor. Relative attitude determination, however, is more difficult. The attitude is calculated based on relative position measurements of several reflectors placed in a known arrangement on the target vehicle. The constraints imposed on the sensor by the attitude determination method are severe. Narrow beamwidth, wide field of view (fov), high range accuracy, and fast random scan capability are all required to determine attitude by this method. A consideration of these constraints as well as others imposed by expected operating conditions and the available technology led to the conclusion that the sensor should be a cw optical radar employing a semiconductor laser transmitter and an image dissector receiver.

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

High-contrast X-ray micro-tomography of low attenuation samples using large area hybrid semiconductor pixel detector array of 10 × 5 Timepix chips

NASA Astrophysics Data System (ADS)

Karch, J.; Krejci, F.; Bartl, B.; Dudak, J.; Kuba, J.; Kvacek, J.; Zemlicka, J.

2016-01-01

State-of-the-art hybrid pixel semiconductor detectors provide excellent imaging properties such as unlimited dynamic range, high spatial resolution, high frame rate and energy sensitivity. Nevertheless, a limitation in the use of these devices for imaging has been the small sensitive area of a few square centimetres. In the field of microtomography we make use of a large area pixel detector assembled from 50 Timepix edgeless chips providing fully sensitive area of 14.3 × 7.15 cm2. We have successfully demonstrated that the enlargement of the sensitive area enables high-quality tomographic measurements of whole objects with high geometrical magnification without any significant degradation in resulting reconstructions related to the chip tilling and edgeless sensor technology properties. The technique of micro-tomography with the newly developed large area detector is applied for samples formed by low attenuation, low contrast materials such a seed from Phacelia tanacetifolia, a charcoalified wood sample and a beeswax seal sample.

High-speed line-scan camera with digital time delay integration

NASA Astrophysics Data System (ADS)

Bodenstorfer, Ernst; Fürtler, Johannes; Brodersen, Jörg; Mayer, Konrad J.; Eckel, Christian; Gravogl, Klaus; Nachtnebel, Herbert

2007-02-01

Dealing with high-speed image acquisition and processing systems, the speed of operation is often limited by the amount of available light, due to short exposure times. Therefore, high-speed applications often use line-scan cameras, based on charge-coupled device (CCD) sensors with time delayed integration (TDI). Synchronous shift and accumulation of photoelectric charges on the CCD chip - according to the objects' movement - result in a longer effective exposure time without introducing additional motion blur. This paper presents a high-speed color line-scan camera based on a commercial complementary metal oxide semiconductor (CMOS) area image sensor with a Bayer filter matrix and a field programmable gate array (FPGA). The camera implements a digital equivalent to the TDI effect exploited with CCD cameras. The proposed design benefits from the high frame rates of CMOS sensors and from the possibility of arbitrarily addressing the rows of the sensor's pixel array. For the digital TDI just a small number of rows are read out from the area sensor which are then shifted and accumulated according to the movement of the inspected objects. This paper gives a detailed description of the digital TDI algorithm implemented on the FPGA. Relevant aspects for the practical application are discussed and key features of the camera are listed.

Silicon Carbide Gas Sensors for Propulsion Emissions and Safety Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Xu, J.; Neudeck, P. G.; Lukco, D.; Trunek, A.; Spry, D.; Lampard, P.; Androjna, D.; Makel, D.; Ward, B.

2007-01-01

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace propulsion applications including emissions monitoring, leak detection, and hydrazine monitoring. These applications often require sensitive gas detection in a range of environments. An effective sensing approach to meet the needs of these applications is a Schottky diode based on a SiC semiconductor. The primary advantage of using SiC as a semiconductor is its inherent stability and capability to operate at a wide range of temperatures. The complete SiC Schottky diode gas sensing structure includes both the SiC semiconductor and gas sensitive thin film metal layers; reliable operation of the SiC-based gas sensing structure requires good control of the interface between these gas sensitive layers and the SiC. This paper reports on the development of SiC gas sensors. The focus is on two efforts to better control the SiC gas sensitive Schottky diode interface. First, the use of palladium oxide (PdOx) as a barrier layer between the metal and SiC is discussed. Second, the use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor element deposition is explored. The use of SiC gas sensors in a multi-parameter detection system is briefly discussed. It is concluded that SiC gas sensors have potential in a range of propulsion system applications, but tailoring of the sensor for each application is necessary.

High-Speed Scanning Interferometer Using CMOS Image Sensor and FPGA Based on Multifrequency Phase-Tracking Detection

NASA Technical Reports Server (NTRS)

Ohara, Tetsuo

2012-01-01

A sub-aperture stitching optical interferometer can provide a cost-effective solution for an in situ metrology tool for large optics; however, the currently available technologies are not suitable for high-speed and real-time continuous scan. NanoWave s SPPE (Scanning Probe Position Encoder) has been proven to exhibit excellent stability and sub-nanometer precision with a large dynamic range. This same technology can transform many optical interferometers into real-time subnanometer precision tools with only minor modification. The proposed field-programmable gate array (FPGA) signal processing concept, coupled with a new-generation, high-speed, mega-pixel CMOS (complementary metal-oxide semiconductor) image sensor, enables high speed (>1 m/s) and real-time continuous surface profiling that is insensitive to variation of pixel sensitivity and/or optical transmission/reflection. This is especially useful for large optics surface profiling.

Cross delay line sensor characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Owens, Israel J; Remelius, Dennis K; Tiee, Joe J

There exists a wealth of information in the scientific literature on the physical properties and device characterization procedures for complementary metal oxide semiconductor (CMOS), charge coupled device (CCD) and avalanche photodiode (APD) format detectors. Numerous papers and books have also treated photocathode operation in the context of photomultiplier tube (PMT) operation for either non imaging applications or limited night vision capability. However, much less information has been reported in the literature about the characterization procedures and properties of photocathode detectors with novel cross delay line (XDL) anode structures. These allow one to detect single photons and create images by recordingmore » space and time coordinate (X, Y & T) information. In this paper, we report on the physical characteristics and performance of a cross delay line anode sensor with an enhanced near infrared wavelength response photocathode and high dynamic range micro channel plate (MCP) gain (> 10{sup 6}) multiplier stage. Measurement procedures and results including the device dark event rate (DER), pulse height distribution, quantum and electronic device efficiency (QE & DQE) and spatial resolution per effective pixel region in a 25 mm sensor array are presented. The overall knowledge and information obtained from XDL sensor characterization allow us to optimize device performance and assess capability. These device performance properties and capabilities make XDL detectors ideal for remote sensing field applications that require single photon detection, imaging, sub nano-second timing response, high spatial resolution (10's of microns) and large effective image format.« less

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

Semiconductor nanomembrane-based sensors for high frequency pressure measurements

NASA Astrophysics Data System (ADS)

Ruan, Hang; Kang, Yuhong; Homer, Michelle; Claus, Richard O.; Mayo, David; Sibold, Ridge; Jones, Tyler; Ng, Wing

2017-04-01

This paper demonstrates improvements on semiconductor nanomembrane based high frequency pressure sensors that utilize silicon on insulator techniques in combination with nanocomposite materials. The low-modulus, conformal nanomembrane sensor skins with integrated interconnect elements and electronic devices could be applied to vehicles or wind tunnel models for full spectrum pressure analysis. Experimental data demonstrates that: 1) silicon nanomembrane may be used as single pressure sensor transducers and elements in sensor arrays, 2) the arrays may be instrumented to map pressure over the surfaces of test articles over a range of Reynolds numbers, temperature and other environmental conditions, 3) in the high frequency range, the sensor is comparable to the commercial high frequency sensor, and 4) in the low frequency range, the sensor is much better than the commercial sensor. This supports the claim that nanomembrane pressure sensors may be used for wide bandwidth flow analysis.

Towards real-time VMAT verification using a prototype, high-speed CMOS active pixel sensor.

PubMed

Zin, Hafiz M; Harris, Emma J; Osmond, John P F; Allinson, Nigel M; Evans, Philip M

2013-05-21

This work investigates the feasibility of using a prototype complementary metal oxide semiconductor active pixel sensor (CMOS APS) for real-time verification of volumetric modulated arc therapy (VMAT) treatment. The prototype CMOS APS used region of interest read out on the chip to allow fast imaging of up to 403.6 frames per second (f/s). The sensor was made larger (5.4 cm × 5.4 cm) using recent advances in photolithographic technique but retains fast imaging speed with the sensor's regional read out. There is a paradigm shift in radiotherapy treatment verification with the advent of advanced treatment techniques such as VMAT. This work has demonstrated that the APS can track multi leaf collimator (MLC) leaves moving at 18 mm s(-1) with an automatic edge tracking algorithm at accuracy better than 1.0 mm even at the fastest imaging speed. Evaluation of the measured fluence distribution for an example VMAT delivery sampled at 50.4 f/s was shown to agree well with the planned fluence distribution, with an average gamma pass rate of 96% at 3%/3 mm. The MLC leaves motion and linac pulse rate variation delivered throughout the VMAT treatment can also be measured. The results demonstrate the potential of CMOS APS technology as a real-time radiotherapy dosimeter for delivery of complex treatments such as VMAT.

Characterisation of a novel reverse-biased PPD CMOS image sensor

NASA Astrophysics Data System (ADS)

Stefanov, K. D.; Clarke, A. S.; Ivory, J.; Holland, A. D.

2017-11-01

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the pixel p-wells, called Deep Depletion Extension (DDE), have been added in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The first prototype has been manufactured on a 18 μm thick, 1000 Ω .cm epitaxial silicon wafers using 180 nm PPD image sensor process at TowerJazz Semiconductor. The chip contains arrays of 10 μm and 5.4 μm pixels, with variations of the shape, size and the depth of the DDE implant. Back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v, and characterised together with the front-side illuminated (FSI) variants. The presented results show that the devices could be reverse-biased without parasitic leakage currents, in good agreement with simulations. The new 10 μm pixels in both BSI and FSI variants exhibit nearly identical photo response to the reference non-modified pixels, as characterised with the photon transfer curve. Different techniques were used to measure the depletion depth in FSI and BSI chips, and the results are consistent with the expected full depletion.

SPIDER: Next Generation Chip Scale Imaging Sensor Update

NASA Astrophysics Data System (ADS)

Duncan, A.; Kendrick, R.; Ogden, C.; Wuchenich, D.; Thurman, S.; Su, T.; Lai, W.; Chun, J.; Li, S.; Liu, G.; Yoo, S. J. B.

2016-09-01

The Lockheed Martin Advanced Technology Center (LM ATC) and the University of California at Davis (UC Davis) are developing an electro-optical (EO) imaging sensor called SPIDER (Segmented Planar Imaging Detector for Electro-optical Reconnaissance) that seeks to provide a 10x to 100x size, weight, and power (SWaP) reduction alternative to the traditional bulky optical telescope and focal-plane detector array. The substantial reductions in SWaP would reduce cost and/or provide higher resolution by enabling a larger-aperture imager in a constrained volume. Our SPIDER imager replaces the traditional optical telescope and digital focal plane detector array with a densely packed interferometer array based on emerging photonic integrated circuit (PIC) technologies that samples the object being imaged in the Fourier domain (i.e., spatial frequency domain), and then reconstructs an image. Our approach replaces the large optics and structures required by a conventional telescope with PICs that are accommodated by standard lithographic fabrication techniques (e.g., complementary metal-oxide-semiconductor (CMOS) fabrication). The standard EO payload integration and test process that involves precision alignment and test of optical components to form a diffraction limited telescope is, therefore, replaced by in-process integration and test as part of the PIC fabrication, which substantially reduces associated schedule and cost. This paper provides an overview of performance data on the second-generation PIC for SPIDER developed under the Defense Advanced Research Projects Agency (DARPA)'s SPIDER Zoom research funding. We also update the design description of the SPIDER Zoom imaging sensor and the second-generation PIC (high- and low resolution versions).

Semiconductor Sensors for Studying the Heterogeneous Destruction of Ozone at Low Concentrations

NASA Astrophysics Data System (ADS)

Obvintseva, L. A.; Sharova, T. B.; Avetisov, A. K.; Sukhareva, I. P.

2018-06-01

Prospects for the use of semiconductor resistive sensors in studies of the heterogeneous destruction of ozone at low concentrations (5-400 μg/m3) were shown. The influence of various factors (sensor temperature, gas flow rate, ozone concentration) on the results of ozone concentration measurements with sensors of various types was studied. Methods for forming a sensitive layer of In2O3(3% Fe2O3) sensors with specified parameters of calibration curves were proposed. The optimum conditions for the operation of sensors in a flow mode were formulated. The results of the study of heterogeneous destruction of ozone on microfiber polymer and natural disperse (sand, coals) materials obtained by the developed method were presented.

Towards a Chemiresistive Sensor-Integrated Electronic Nose: A Review

PubMed Central

Chiu, Shih-Wen; Tang, Kea-Tiong

2013-01-01

Electronic noses have potential applications in daily life, but are restricted by their bulky size and high price. This review focuses on the use of chemiresistive gas sensors, metal-oxide semiconductor gas sensors and conductive polymer gas sensors in an electronic nose for system integration to reduce size and cost. The review covers the system design considerations and the complementary metal-oxide-semiconductor integrated technology for a chemiresistive gas sensor electronic nose, including the integrated sensor array, its readout interface, and pattern recognition hardware. In addition, the state-of-the-art technology integrated in the electronic nose is also presented, such as the sensing front-end chip, electronic nose signal processing chip, and the electronic nose system-on-chip. PMID:24152879

Synchrotron based planar imaging and digital tomosynthesis of breast and biopsy phantoms using a CMOS active pixel sensor.

PubMed

Szafraniec, Magdalena B; Konstantinidis, Anastasios C; Tromba, Giuliana; Dreossi, Diego; Vecchio, Sara; Rigon, Luigi; Sodini, Nicola; Naday, Steve; Gunn, Spencer; McArthur, Alan; Olivo, Alessandro

2015-03-01

The SYRMEP (SYnchrotron Radiation for MEdical Physics) beamline at Elettra is performing the first mammography study on human patients using free-space propagation phase contrast imaging. The stricter spatial resolution requirements of this method currently force the use of conventional films or specialized computed radiography (CR) systems. This also prevents the implementation of three-dimensional (3D) approaches. This paper explores the use of an X-ray detector based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology as a possible alternative, for acquisitions both in planar and tomosynthesis geometry. Results indicate higher quality of the images acquired with the synchrotron set-up in both geometries. This improvement can be partly ascribed to the use of parallel, collimated and monochromatic synchrotron radiation (resulting in scatter rejection, no penumbra-induced blurring and optimized X-ray energy), and partly to phase contrast effects. Even though the pixel size of the used detector is still too large - and thus suboptimal - for free-space propagation phase contrast imaging, a degree of phase-induced edge enhancement can clearly be observed in the images. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Semiconductor sensor for optically measuring polarization rotation of optical wavefronts using rare earth iron garnets

DOEpatents

Duncan, Paul G.

2002-01-01

Described are the design of a rare earth iron garnet sensor element, optical methods of interrogating the sensor element, methods of coupling the optical sensor element to a waveguide, and an optical and electrical processing system for monitoring the polarization rotation of a linearly polarized wavefront undergoing external modulation due to magnetic field or electrical current fluctuation. The sensor element uses the Faraday effect, an intrinsic property of certain rare-earth iron garnet materials, to rotate the polarization state of light in the presence of a magnetic field. The sensor element may be coated with a thin-film mirror to effectively double the optical path length, providing twice the sensitivity for a given field strength or temperature change. A semiconductor sensor system using a rare earth iron garnet sensor element is described.

Detection systems for mass spectrometry imaging: a perspective on novel developments with a focus on active pixel detectors.

PubMed

Jungmann, Julia H; Heeren, Ron M A

2013-01-15

Instrumental developments for imaging and individual particle detection for biomolecular mass spectrometry (imaging) and fundamental atomic and molecular physics studies are reviewed. Ion-counting detectors, array detection systems and high mass detectors for mass spectrometry (imaging) are treated. State-of-the-art detection systems for multi-dimensional ion, electron and photon detection are highlighted. Their application and performance in three different imaging modes--integrated, selected and spectral image detection--are described. Electro-optical and microchannel-plate-based systems are contrasted. The analytical capabilities of solid-state pixel detectors--both charge coupled device (CCD) and complementary metal oxide semiconductor (CMOS) chips--are introduced. The Medipix/Timepix detector family is described as an example of a CMOS hybrid active pixel sensor. Alternative imaging methods for particle detection and their potential for future applications are investigated. Copyright © 2012 John Wiley & Sons, Ltd.

Semiconductor metal oxide compounds based gas sensors: A literature review

NASA Astrophysics Data System (ADS)

Patil, Sunil Jagannath; Patil, Arun Vithal; Dighavkar, Chandrakant Govindrao; Thakare, Kashinath Shravan; Borase, Ratan Yadav; Nandre, Sachin Jayaram; Deshpande, Nishad Gopal; Ahire, Rajendra Ramdas

2015-03-01

This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (LPG), H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein.

Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

NASA Astrophysics Data System (ADS)

Wang, Ying; Gao, Peng; Sha, Linna; Chi, Qianqian; Yang, Lei; Zhang, Jianjiao; Chen, Yujin; Zhang, Milin

2018-04-01

The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ({{{{O}}}2}- and O - ) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.

Non-flickering 100 m RGB visible light communication transmission based on a CMOS image sensor.

PubMed

Chow, Chi-Wai; Shiu, Ruei-Jie; Liu, Yen-Chun; Liu, Yang; Yeh, Chien-Hung

2018-03-19

We demonstrate a non-flickering 100 m long-distance RGB visible light communication (VLC) transmission based on a complementary-metal-oxide-semiconductor (CMOS) camera. Experimental bit-error rate (BER) measurements under different camera ISO values and different transmission distances are evaluated. Here, we also experimentally reveal that the rolling shutter effect- (RSE) based VLC system cannot work at long distance transmission, and the under-sampled modulation- (USM) based VLC system is a good choice.

Resolution Properties of a Calcium Tungstate (CaWO4) Screen Coupled to a CMOS Imaging Detector

NASA Astrophysics Data System (ADS)

Koukou, Vaia; Martini, Niki; Valais, Ioannis; Bakas, Athanasios; Kalyvas, Nektarios; Lavdas, Eleftherios; Fountos, George; Kandarakis, Ioannis; Michail, Christos

2017-11-01

The aim of the current work was to assess the resolution properties of a calcium tungstate (CaWO4) screen (screen coating thickness: 50.09 mg/cm2, actual thickness: 167.2 μm) coupled to a high resolution complementary metal oxide semiconductor (CMOS) digital imaging sensor. A 2.7x3.6 cm2 CaWO4 sample was extracted from an Agfa Curix universal screen and was coupled directly with the active area of the active pixel sensor (APS) CMOS sensor. Experiments were performed following the new IEC 62220-1-1:2015 International Standard, using an RQA-5 beam quality. Resolution was assessed in terms of the Modulation Transfer Function (MTF), using the slanted-edge method. The CaWO4/CMOS detector configuration was found with linear response, in the exposure range under investigation. The final MTF was obtained through averaging the oversampled edge spread function (ESF), using a custom-made software developed by our team, according to the IEC 62220-1-1:2015. Considering the renewed interest in calcium tungstate for various applications, along with the resolution results of this work, CaWO4 could be also considered for use in X-ray imaging devices such as charged-coupled devices (CCD) and CMOS.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors.

PubMed

Ge, Xiaoliang; Theuwissen, Albert J P

2018-02-27

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models.

Temporal Noise Analysis of Charge-Domain Sampling Readout Circuits for CMOS Image Sensors †

PubMed Central

Theuwissen, Albert J. P.

2018-01-01

This paper presents a temporal noise analysis of charge-domain sampling readout circuits for Complementary Metal-Oxide Semiconductor (CMOS) image sensors. In order to address the trade-off between the low input-referred noise and high dynamic range, a Gm-cell-based pixel together with a charge-domain correlated-double sampling (CDS) technique has been proposed to provide a way to efficiently embed a tunable conversion gain along the read-out path. Such readout topology, however, operates in a non-stationery large-signal behavior, and the statistical properties of its temporal noise are a function of time. Conventional noise analysis methods for CMOS image sensors are based on steady-state signal models, and therefore cannot be readily applied for Gm-cell-based pixels. In this paper, we develop analysis models for both thermal noise and flicker noise in Gm-cell-based pixels by employing the time-domain linear analysis approach and the non-stationary noise analysis theory, which help to quantitatively evaluate the temporal noise characteristic of Gm-cell-based pixels. Both models were numerically computed in MATLAB using design parameters of a prototype chip, and compared with both simulation and experimental results. The good agreement between the theoretical and measurement results verifies the effectiveness of the proposed noise analysis models. PMID:29495496

Hybrid organic semiconductor lasers for bio-molecular sensing.

PubMed

Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

2014-01-01

Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

On-chip copper-dielectric interference filters for manufacturing of ambient light and proximity CMOS sensors.

PubMed

Frey, Laurent; Masarotto, Lilian; D'Aillon, Patrick Gros; Pellé, Catherine; Armand, Marilyn; Marty, Michel; Jamin-Mornet, Clémence; Lhostis, Sandrine; Le Briz, Olivier

2014-07-10

Filter technologies implemented on CMOS image sensors for spectrally selective applications often use a combination of on-chip organic resists and an external substrate with multilayer dielectric coatings. The photopic-like and near-infrared bandpass filtering functions respectively required by ambient light sensing and user proximity detection through time-of-flight can be fully integrated on chip with multilayer metal-dielectric filters. Copper, silicon nitride, and silicon oxide are the materials selected for a technological proof-of-concept on functional wafers, due to their immediate availability in front-end semiconductor fabs. Filter optical designs are optimized with respect to specific performance criteria, and the robustness of the designs regarding process errors are evaluated for industrialization purposes.

Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit.

PubMed

Nakazato, Kazuo

2014-03-28

By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor.

Humidity effect on organic semiconductor NiPc films deposited at different gravity conditions

NASA Astrophysics Data System (ADS)

Fatima, N.; Ahmed, M. M.; Karimov, Kh. S.; Ahmedov, Kh.

2016-08-01

In this study, thin films of Nickel Phthalocyanine (NiPc) were deposited by centrifugation at high gravity (70g), and also at normal gravity (1g) conditions to fabricate humidity sensors. Ceramic alumina sheet, coated with silver electrodes, having interelectrode distance of 0.2l mm were used to assess the electrical properties of the sensors. Room temperature capacitance and impedance variations were measured as a function of relative humidity ranging from 25% ∼⃒ 95% at 1 kHz frequency. It was observed that sensors fabricated at 70g were more sensitive compared to sensors fabricated at 1g. Sensors fabricated at 70g exhibited 1.8 times decrease in their impedance and1.5 times increase in their capacitance at peak ambient humidity. SEM images showed more roughness for the films deposited at 70g compared to films deposited at 1g. It was assumed that surface irregularities might have increased active surface area of 70g sensors hence changed the electrical response. Impedance-humidity and capacitance-humidity relationships were modeled and a good agreement was observed between experimental and modeled data. Experimental data showed that NiPc films could be useful for instrumentation industry to fabricate organic humidity sensors.

A novel dual gating approach using joint inertial sensors: implications for cardiac PET imaging

NASA Astrophysics Data System (ADS)

Jafari Tadi, Mojtaba; Teuho, Jarmo; Lehtonen, Eero; Saraste, Antti; Pänkäälä, Mikko; Koivisto, Tero; Teräs, Mika

2017-10-01

Positron emission tomography (PET) is a non-invasive imaging technique which may be considered as the state of art for the examination of cardiac inflammation due to atherosclerosis. A fundamental limitation of PET is that cardiac and respiratory motions reduce the quality of the achieved images. Current approaches for motion compensation involve gating the PET data based on the timing of quiescent periods of cardiac and respiratory cycles. In this study, we present a novel gating method called microelectromechanical (MEMS) dual gating which relies on joint non-electrical sensors, i.e. tri-axial accelerometer and gyroscope. This approach can be used for optimized selection of quiescent phases of cardiac and respiratory cycles. Cardiomechanical activity according to echocardiography observations was investigated to confirm whether this dual sensor solution can provide accurate trigger timings for cardiac gating. Additionally, longitudinal chest motions originating from breathing were measured by accelerometric- and gyroscopic-derived respiratory (ADR and GDR) tracking. The ADR and GDR signals were evaluated against Varian real-time position management (RPM) signals in terms of amplitude and phase. Accordingly, high linear correlation and agreement were achieved between the reference electrocardiography, RPM, and measured MEMS signals. We also performed a Ge-68 phantom study to evaluate possible metal artifacts caused by the integrated read-out electronics including mechanical sensors and semiconductors. The reconstructed phantom images did not reveal any image artifacts. Thus, it was concluded that MEMS-driven dual gating can be used in PET studies without an effect on the quantitative or visual accuracy of the PET images. Finally, the applicability of MEMS dual gating for cardiac PET imaging was investigated with two atherosclerosis patients. Dual gated PET images were successfully reconstructed using only MEMS signals and both qualitative and quantitative assessments revealed encouraging results that warrant further investigation of this method.

Micro-/nanoscale multi-field coupling in nonlinear photonic devices

NASA Astrophysics Data System (ADS)

Yang, Qing; Wang, Yubo; Tang, Mingwei; Xu, Pengfei; Xu, Yingke; Liu, Xu

2017-08-01

The coupling of mechanics/electronics/photonics may improve the performance of nanophotonic devices not only in the linear region but also in the nonlinear region. This review letter mainly presents the recent advances on multi-field coupling in nonlinear photonic devices. The nonlinear piezoelectric effect and piezo-phototronic effects in quantum wells and fibers show that large second-order nonlinear susceptibilities can be achieved, and second harmonic generation and electro-optic modulation can be enhanced and modulated. Strain engineering can tune the lattice structures and induce second order susceptibilities in central symmetry semiconductors. By combining the absorption-based photoacoustic effect and intensity-dependent photobleaching effect, subdiffraction imaging can be achieved. This review will also discuss possible future applications of these novel effects and the perspective of their research. The review can help us develop a deeper knowledge of the substance of photon-electron-phonon interaction in a micro-/nano- system. Moreover, it can benefit the design of nonlinear optical sensors and imaging devices with a faster response rate, higher efficiency, more sensitivity and higher spatial resolution which could be applied in environmental detection, bio-sensors, medical imaging and so on.

NASA Tech Briefs, July 2007

NASA Technical Reports Server (NTRS)

2007-01-01

Topics covered include: Miniature Intelligent Sensor Module; "Smart" Sensor Module; Portable Apparatus for Electrochemical Sensing of Ethylene; Increasing Linear Dynamic Range of a CMOS Image Sensor; Flight Qualified Micro Sun Sensor; Norbornene-Based Polymer Electrolytes for Lithium Cells; Making Single-Source Precursors of Ternary Semiconductors; Water-Free Proton-Conducting Membranes for Fuel Cells; Mo/Ti Diffusion Bonding for Making Thermoelectric Devices; Photodetectors on Coronagraph Mask for Pointing Control; High-Energy-Density, Low-Temperature Li/CFx Primary Cells; G4-FETs as Universal and Programmable Logic Gates; Fabrication of Buried Nanochannels From Nanowire Patterns; Diamond Smoothing Tools; Infrared Imaging System for Studying Brain Function; Rarefying Spectra of Whispering-Gallery-Mode Resonators; Large-Area Permanent-Magnet ECR Plasma Source; Slot-Antenna/Permanent-Magnet Device for Generating Plasma; Fiber-Optic Strain Gauge With High Resolution And Update Rate; Broadband Achromatic Telecentric Lens; Temperature-Corrected Model of Turbulence in Hot Jet Flows; Enhanced Elliptic Grid Generation; Automated Knowledge Discovery From Simulators; Electro-Optical Modulator Bias Control Using Bipolar Pulses; Generative Representations for Automated Design of Robots; Mars-Approach Navigation Using In Situ Orbiters; Efficient Optimization of Low-Thrust Spacecraft Trajectories; Cylindrical Asymmetrical Capacitors for Use in Outer Space; Protecting Against Faults in JPL Spacecraft; Algorithm Optimally Allocates Actuation of a Spacecraft; and Radar Interferometer for Topographic Mapping of Glaciers and Ice Sheets.

Development of micro-heaters with optimized temperature compensation design for gas sensors.

PubMed

Hwang, Woo-Jin; Shin, Kyu-Sik; Roh, Ji-Hyoung; Lee, Dae-Sung; Choa, Sung-Hoon

2011-01-01

One of the key components of a chemical gas sensor is a MEMS micro-heater. Micro-heaters are used in both semiconductor gas sensors and NDIR gas sensors; however they each require different heat dissipation characteristics. For the semiconductor gas sensors, a uniform temperature is required over a wide area of the heater. On the other hand, for the NDIR gas sensor, the micro-heater needs high levels of infrared radiation in order to increase sensitivity. In this study, a novel design of a poly-Si micro-heater is proposed to improve the uniformity of heat dissipation on the heating plate. Temperature uniformity of the micro-heater is achieved by compensating for the variation in power consumption around the perimeter of the heater. With the power compensated design, the uniform heating area is increased by 2.5 times and the average temperature goes up by 40 °C. Therefore, this power compensated micro-heater design is suitable for a semiconductor gas sensor. Meanwhile, the poly-Si micro-heater without compensation shows a higher level of infrared radiation under equal power consumption conditions. This indicates that the micro-heater without compensation is more suitable for a NDIR gas sensor. Furthermore, the micro-heater shows a short response time of less than 20 ms, indicating a very high efficiency of pulse driving.

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors

PubMed Central

Maier, Konrad; Helwig, Andreas; Müller, Gerhard; Hille, Pascal; Eickhoff, Martin

2015-01-01

In this work the low temperature response of metal oxide semiconductor gas sensors is analyzed. Important characteristics of this low-temperature response are a pronounced selectivity to acid- and base-forming gases and a large disparity of response and recovery time constants which often leads to an integrator-type of gas response. We show that this kind of sensor performance is related to the trend of semiconductor gas sensors to adsorb water vapor in multi-layer form and that this ability is sensitively influenced by the surface morphology. In particular we show that surface roughness in the nanometer range enhances desorption of water from multi-layer adsorbates, enabling them to respond more swiftly to changes in the ambient humidity. Further experiments reveal that reactive gases, such as NO2 and NH3, which are easily absorbed in the water adsorbate layers, are more easily exchanged across the liquid/air interface when the humidity in the ambient air is high. PMID:28793583

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2003-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

2000-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

High-performance camera module for fast quality inspection in industrial printing applications

NASA Astrophysics Data System (ADS)

Fürtler, Johannes; Bodenstorfer, Ernst; Mayer, Konrad J.; Brodersen, Jörg; Heiss, Dorothea; Penz, Harald; Eckel, Christian; Gravogl, Klaus; Nachtnebel, Herbert

2007-02-01

Today, printing products which must meet highest quality standards, e.g., banknotes, stamps, or vouchers, are automatically checked by optical inspection systems. Typically, the examination of fine details of the print or security features demands images taken from various perspectives, with different spectral sensitivity (visible, infrared, ultraviolet), and with high resolution. Consequently, the inspection system is equipped with several cameras and has to cope with an enormous data rate to be processed in real-time. Hence, it is desirable to move image processing tasks into the camera to reduce the amount of data which has to be transferred to the (central) image processing system. The idea is to transfer relevant information only, i.e., features of the image instead of the raw image data from the sensor. These features are then further processed. In this paper a color line-scan camera for line rates up to 100 kHz is presented. The camera is based on a commercial CMOS (complementary metal oxide semiconductor) area image sensor and a field programmable gate array (FPGA). It implements extraction of image features which are well suited to detect print flaws like blotches of ink, color smears, splashes, spots and scratches. The camera design and several image processing methods implemented on the FPGA are described, including flat field correction, compensation of geometric distortions, color transformation, as well as decimation and neighborhood operations.

High-resolution parallel-detection sensor array using piezo-phototronics effect

DOEpatents

Wang, Zhong L.; Pan, Caofeng

2015-07-28

A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Optical and Electronic NOx Sensors for Applications in Mechatronics

PubMed Central

Di Franco, Cinzia; Elia, Angela; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugarà, Pietro Mario; Ieva, Eliana; Cioffi, Nicola; Torsi, Luisa; Bruno, Giovanni; Losurdo, Maria; Garcia, Michael A.; Wolter, Scott D.; Brown, April; Ricco, Mario

2009-01-01

Current production and emerging NOx sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NOx show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NOx in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NOx sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling. PMID:22412315

Development of Nanomechanical Sensors for Breast Cancer Biomarkers

DTIC Science & Technology

2008-06-01

semiconductor industry in developing large scale integrated circuits at very lost cost can lead to similar breakthroughs in array sensors for biomolecules of...insulated from the serum or buffer. The entire device is mounted onto a semiconductor chip carrier, for easy integration with electronics. Figure 3...Keithley 2400 source meter. The ac modulation and the dc bias are added by a noninverting summing circuit, which is integrated with the preamplifier

Miniaturized optical wavelength sensors

NASA Astrophysics Data System (ADS)

Kung, Helen Ling-Ning

Recently semiconductor processing technology has been applied to the miniaturization of optical wavelength sensors. Compact sensors enable new applications such as integrated diode-laser wavelength monitors and frequency lockers, portable chemical and biological detection, and portable and adaptive hyperspectral imaging arrays. Small sensing systems have trade-offs between resolution, operating range, throughput, multiplexing and complexity. We have developed a new wavelength sensing architecture that balances these parameters for applications involving hyperspectral imaging spectrometer arrays. In this thesis we discuss and demonstrate two new wavelength-sensing architectures whose single-pixel designs can easily be extended into spectrometer arrays. The first class of devices is based on sampling a standing wave. These devices are based on measuring the wavelength-dependent period of optical standing waves formed by the interference of forward and reflected waves at a mirror. We fabricated two different devices based on this principle. The first device is a wavelength monitor, which measures the wavelength and power of a monochromatic source. The second device is a spectrometer that can also act as a selective spectral coherence sensor. The spectrometer contains a large displacement piston-motion MEMS mirror and a thin GaAs photodiode flip-chip bonded to a quartz substrate. The performance of this spectrometer is similar to that of a Michelson in resolution, operating range, throughput and multiplexing but with the added advantages of fewer components and one-dimensional architecture. The second class of devices is based on the Talbot self-imaging effect. The Talbot effect occurs when a periodic object is illuminated with a spatially coherent wave. Periodically spaced self-images are formed behind the object. The spacing of the self-images is proportional to wavelength of the incident light. We discuss and demonstrate how this effect can be used for spectroscopy. In the conclusion we compare these two new miniaturized spectrometer architectures to existing miniaturized spectrometers. We believe that the combination of miniaturized wavelength sensors and smart processing should facilitate the development real-time, adaptive and portable sensing systems.

Electronic nose for the identification of pig feeding and ripening time in Iberian hams.

PubMed

Santos, J P; García, M; Aleixandre, M; Horrillo, M C; Gutiérrez, J; Sayago, I; Fernández, M J; Arés, L

2004-03-01

An electronic nose system to control the processing of dry-cured Iberian ham is presented. The sensors involved are tin oxide semiconductors thin films. They were prepared by RF sputtering. Some of the sensors were doped with metal catalysts as Pt and Pd, in order to improve the selectivity of the sensors. The multisensor with 16 semiconductor sensors, gave different responses from two types of dry-cured Iberian hams which differ in the feeding and curing time. The data has been analysed using the PCA (principal component analysis) and backpropagation and probabilistic neural networks. The analysis shows that different types of Iberian ham can be discriminated and identified successfully.

“Playing around” with Field-Effect Sensors on the Basis of EIS Structures, LAPS and ISFETs

PubMed Central

Schöning, Michael J.

2005-01-01

Microfabricated semiconductor devices are becoming increasingly relevant, also for the detection of biological and chemical quantities. Especially, the “marriage” of biomolecules and silicon technology often yields successful new sensor concepts. The fabrication techniques of such silicon-based chemical sensors and biosensors, respectively, will have a distinct impact in different fields of application such as medicine, food technology, environment, chemistry and biotechnology as well as information processing. Moreover, scientists and engineers are interested in the analytical benefits of miniaturised and microfabricated sensor devices. This paper gives a survey on different types of semiconductor-based field-effect structures that have been recently developed in our laboratory.

Radiation imaging with a new scintillator and a CMOS camera

NASA Astrophysics Data System (ADS)

Kurosawa, S.; Shoji, Y.; Pejchal, J.; Yokota, Y.; Yoshikawa, A.

2014-07-01

A new imaging system consisting of a high-sensitivity complementary metal-oxide semiconductor (CMOS) sensor, a microscope and a new scintillator, Ce-doped Gd3(Al,Ga)5O12 (Ce:GAGG) grown by the Czochralski process, has been developed. The noise, the dark current and the sensitivity of the CMOS camera (ORCA-Flash4.0, Hamamatsu) was revised and compared to a conventional CMOS, whose sensitivity is at the same level as that of a charge coupled device (CCD) camera. Without the scintillator, this system had a good position resolution of 2.1 ± 0.4 μm and we succeeded in obtaining the alpha-ray images using 1-mm thick Ce:GAGG crystal. This system can be applied for example to high energy X-ray beam profile monitor, etc.

A research on radiation calibration of high dynamic range based on the dual channel CMOS

NASA Astrophysics Data System (ADS)

Ma, Kai; Shi, Zhan; Pan, Xiaodong; Wang, Yongsheng; Wang, Jianghua

2017-10-01

The dual channel complementary metal-oxide semiconductor (CMOS) can get high dynamic range (HDR) image through extending the gray level of the image by using image fusion with high gain channel image and low gain channel image in a same frame. In the process of image fusion with dual channel, it adopts the coefficients of radiation response of a pixel from dual channel in a same frame, and then calculates the gray level of the pixel in the HDR image. For the coefficients of radiation response play a crucial role in image fusion, it has to find an effective method to acquire these parameters. In this article, it makes a research on radiation calibration of high dynamic range based on the dual channel CMOS, and designs an experiment to calibrate the coefficients of radiation response for the sensor it used. In the end, it applies these response parameters in the dual channel CMOS which calibrates, and verifies the correctness and feasibility of the method mentioned in this paper.

Development of plenoptic infrared camera using low dimensional material based photodetectors

NASA Astrophysics Data System (ADS)

Chen, Liangliang

Infrared (IR) sensor has extended imaging from submicron visible spectrum to tens of microns wavelength, which has been widely used for military and civilian application. The conventional bulk semiconductor materials based IR cameras suffer from low frame rate, low resolution, temperature dependent and highly cost, while the unusual Carbon Nanotube (CNT), low dimensional material based nanotechnology has been made much progress in research and industry. The unique properties of CNT lead to investigate CNT based IR photodetectors and imaging system, resolving the sensitivity, speed and cooling difficulties in state of the art IR imagings. The reliability and stability is critical to the transition from nano science to nano engineering especially for infrared sensing. It is not only for the fundamental understanding of CNT photoresponse induced processes, but also for the development of a novel infrared sensitive material with unique optical and electrical features. In the proposed research, the sandwich-structured sensor was fabricated within two polymer layers. The substrate polyimide provided sensor with isolation to background noise, and top parylene packing blocked humid environmental factors. At the same time, the fabrication process was optimized by real time electrical detection dielectrophoresis and multiple annealing to improve fabrication yield and sensor performance. The nanoscale infrared photodetector was characterized by digital microscopy and precise linear stage in order for fully understanding it. Besides, the low noise, high gain readout system was designed together with CNT photodetector to make the nano sensor IR camera available. To explore more of infrared light, we employ compressive sensing algorithm into light field sampling, 3-D camera and compressive video sensing. The redundant of whole light field, including angular images for light field, binocular images for 3-D camera and temporal information of video streams, are extracted and expressed in compressive approach. The following computational algorithms are applied to reconstruct images beyond 2D static information. The super resolution signal processing was then used to enhance and improve the image spatial resolution. The whole camera system brings a deeply detailed content for infrared spectrum sensing.

Semiconductor sensor embedded microfluidic chip for protein biomarker detection using a bead-based immunoassay combined with deoxyribonucleic acid strand labeling.

PubMed

Lin, Yen-Heng; Peng, Po-Yu

2015-04-15

Two major issues need to be addressed in applying semiconductor biosensors to detecting proteins in immunoassays. First, the length of the antibody on the sensor surface surpasses the Debye lengths (approximately 1 nm, in normal ionic strength solution), preventing certain specifically bound proteins from being tightly attached to the sensor surface. Therefore, these proteins do not contribute to the sensor's surface potential change. Second, these proteins carry a small charge and can be easily affected by the pH of the surrounding solution. This study proposes a magnetic bead-based immunoassay using a secondary antibody to label negatively charged DNA fragments for signal amplification. An externally imposed magnetic force attaches the analyte tightly to the sensor surface, thereby effectively solving the problem of the analyte protein's distance to the sensor surface surpassing the Debye lengths. In addition, a normal ion intensity buffer can be used without dilution for the proposed method. Experiments revealed that the sensitivity can be improved by using a longer DNA fragment for labeling and smaller magnetic beads as solid support for the antibody. By using a 90 base pair DNA label, the signal was 15 times greater than that without labeling. In addition, by using a 120 nm magnetic bead, a minimum detection limit of 12.5 ng mL(-1) apolipoprotein A1 can be measured. Furthermore, this study integrates a semiconductor sensor with a microfluidic chip. With the help of microvalves and micromixers in the chip, the length of the mixing step for each immunoassay has been reduced from 1h to 20 min, and the sample volume has been reduced from 80 μL to 10 μL. In practice, a protein biomarker in a urinary bladder cancer patient's urine was successfully measured using this technique. This study provides a convenient and effective method to measure protein using a semiconductor sensor. Copyright © 2015 Elsevier B.V. All rights reserved.

A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

DTIC Science & Technology

2014-01-01

ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Preliminary performances measured on a CMOS long linear array for space application

NASA Astrophysics Data System (ADS)

Renard, Christophe; Artinian, Armand; Dantes, Didier; Lepage, Gérald; Diels, Wim

2017-11-01

This paper presents the design and the preliminary performances of a CMOS linear array, resulting from collaboration between Alcatel Alenia Space and Cypress Semiconductor BVBA, which takes advantage of emerging potentialities of CMOS technologies. The design of the sensor is presented: it includes 8000 panchromatic pixels with up to 25 rows used in TDI mode, and 4 lines of 2000 pixels for multispectral imaging. Main system requirements and detector tradeoffs are recalled, and the preliminary test results obtained with a first generation prototype are summarized and compared with predicted performances.

Optical and Electronic NO(x) Sensors for Applications in Mechatronics.

PubMed

Di Franco, Cinzia; Elia, Angela; Spagnolo, Vincenzo; Scamarcio, Gaetano; Lugarà, Pietro Mario; Ieva, Eliana; Cioffi, Nicola; Torsi, Luisa; Bruno, Giovanni; Losurdo, Maria; Garcia, Michael A; Wolter, Scott D; Brown, April; Ricco, Mario

2009-01-01

Current production and emerging NO(x) sensors based on optical and nanomaterials technologies are reviewed. In view of their potential applications in mechatronics, we compared the performance of: i) Quantum cascade lasers (QCL) based photoacoustic (PA) systems; ii) gold nanoparticles as catalytically active materials in field-effect transistor (FET) sensors, and iii) functionalized III-V semiconductor based devices. QCL-based PA sensors for NO(x) show a detection limit in the sub part-per-million range and are characterized by high selectivity and compact set-up. Electrochemically synthesized gold-nanoparticle FET sensors are able to monitor NO(x) in a concentration range from 50 to 200 parts per million and are suitable for miniaturization. Porphyrin-functionalized III-V semiconductor materials can be used for the fabrication of a reliable NO(x) sensor platform characterized by high conductivity, corrosion resistance, and strong surface state coupling.

Super-resolution for scanning light stimulation systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bitzer, L. A.; Neumann, K.; Benson, N., E-mail: niels.benson@uni-due.de

Super-resolution (SR) is a technique used in digital image processing to overcome the resolution limitation of imaging systems. In this process, a single high resolution image is reconstructed from multiple low resolution images. SR is commonly used for CCD and CMOS (Complementary Metal-Oxide-Semiconductor) sensor images, as well as for medical applications, e.g., magnetic resonance imaging. Here, we demonstrate that super-resolution can be applied with scanning light stimulation (LS) systems, which are common to obtain space-resolved electro-optical parameters of a sample. For our purposes, the Projection Onto Convex Sets (POCS) was chosen and modified to suit the needs of LS systems.more » To demonstrate the SR adaption, an Optical Beam Induced Current (OBIC) LS system was used. The POCS algorithm was optimized by means of OBIC short circuit current measurements on a multicrystalline solar cell, resulting in a mean square error reduction of up to 61% and improved image quality.« less

Differential multi-MOSFET nuclear radiation sensor

NASA Technical Reports Server (NTRS)

Deoliveira, W. A.

1977-01-01

Circuit allows minimization of thermal-drift errors, low power consumption, operation over wide dynamic range, improved sensitivity and stability with metaloxide-semiconductor field-effect transistor sensors.

Miniaturized Metal (Metal Alloy)/PdO(x)/SiC Hydrogen and Hydrocarbon Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO(x)). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600 C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sided sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics

PubMed Central

Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

2017-01-01

The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width. PMID:28796167

Inhomogeneous Oxygen Vacancy Distribution in Semiconductor Gas Sensors: Formation, Migration and Determination on Gas Sensing Characteristics.

PubMed

Liu, Jianqiao; Gao, Yinglin; Wu, Xu; Jin, Guohua; Zhai, Zhaoxia; Liu, Huan

2017-08-10

The density of oxygen vacancies in semiconductor gas sensors was often assumed to be identical throughout the grain in the numerical discussion of the gas-sensing mechanism of the devices. In contrast, the actual devices had grains with inhomogeneous distribution of oxygen vacancy under non-ideal conditions. This conflict between reality and discussion drove us to study the formation and migration of the oxygen defects in semiconductor grains. A model of the gradient-distributed oxygen vacancy was proposed based on the effects of cooling rate and re-annealing on semiconductive thin films. The model established the diffusion equations of oxygen vacancy according to the defect kinetics of diffusion and exclusion. We described that the steady-state and transient-state oxygen vacancy distributions, which were used to calculate the gas-sensing characteristics of the sensor resistance and response to reducing gases under two different conditions. The gradient-distributed oxygen vacancy model had the applications in simulating the sensor performances, such as the power law, the grain size effect and the effect of depletion layer width.

FRET-Based Nanobiosensors for Imaging Intracellular Ca²⁺ and H⁺ Microdomains.

PubMed

Zamaleeva, Alsu I; Despras, Guillaume; Luccardini, Camilla; Collot, Mayeul; de Waard, Michel; Oheim, Martin; Mallet, Jean-Maurice; Feltz, Anne

2015-09-23

Semiconductor nanocrystals (NCs) or quantum dots (QDs) are luminous point emitters increasingly being used to tag and track biomolecules in biological/biomedical imaging. However, their intracellular use as highlighters of single-molecule localization and nanobiosensors reporting ion microdomains changes has remained a major challenge. Here, we report the design, generation and validation of FRET-based nanobiosensors for detection of intracellular Ca(2+) and H⁺ transients. Our sensors combine a commercially available CANdot(®)565QD as an energy donor with, as an acceptor, our custom-synthesized red-emitting Ca(2+) or H⁺ probes. These 'Rubies' are based on an extended rhodamine as a fluorophore and a phenol or BAPTA (1,2-bis(o-aminophenoxy)ethane-N,N,N',N'-tetra-acetic acid) for H⁺ or Ca(2+) sensing, respectively, and additionally bear a linker arm for conjugation. QDs were stably functionalized using the same SH/maleimide crosslink chemistry for all desired reactants. Mixing ion sensor and cell-penetrating peptides (that facilitate cytoplasmic delivery) at the desired stoichiometric ratio produced controlled multi-conjugated assemblies. Multiple acceptors on the same central donor allow up-concentrating the ion sensor on the QD surface to concentrations higher than those that could be achieved in free solution, increasing FRET efficiency and improving the signal. We validate these nanosensors for the detection of intracellular Ca(2+) and pH transients using live-cell fluorescence imaging.

Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors.

PubMed

Quevedo-Lopez, M A; Wondmagegn, W T; Alshareef, H N; Ramirez-Bon, R; Gnade, B E

2011-06-01

The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, radiation detectors, etc. In this paper, we review the impact of gate dielectrics, contacts and semiconductor materials on thin film transistors for flexible electronics applications. We present our recent results to fully integrate hybrid complementary metal oxide semiconductors comprising inorganic and organic-based materials. In particular, we demonstrate novel gate dielectric stacks and semiconducting materials. The impact of source and drain contacts on device performance is also discussed.

Physical characterization and performance comparison of active- and passive-pixel CMOS detectors for mammography.

PubMed

Elbakri, I A; McIntosh, B J; Rickey, D W

2009-03-21

We investigated the physical characteristics of two complementary metal oxide semiconductor (CMOS) mammography detectors. The detectors featured 14-bit image acquisition, 50 microm detector element (del) size and an active area of 5 cm x 5 cm. One detector was a passive-pixel sensor (PPS) with signal amplification performed by an array of amplifiers connected to dels via data lines. The other detector was an active-pixel sensor (APS) with signal amplification performed at each del. Passive-pixel designs have higher read noise due to data line capacitance, and the APS represents an attempt to improve the noise performance of this technology. We evaluated the detectors' resolution by measuring the modulation transfer function (MTF) using a tilted edge. We measured the noise power spectra (NPS) and detective quantum efficiencies (DQE) using mammographic beam conditions specified by the IEC 62220-1-2 standard. Our measurements showed the APS to have much higher gain, slightly higher MTF, and higher NPS. The MTF of both sensors approached 10% near the Nyquist limit. DQE values near dc frequency were in the range of 55-67%, with the APS sensor DQE lower than the PPS DQE for all frequencies. Our results show that lower read noise specifications in this case do not translate into gains in the imaging performance of the sensor. We postulate that the lower fill factor of the APS is a possible cause for this result.

3-D System-on-System (SoS) Biomedical-Imaging Architecture for Health-Care Applications.

PubMed

Sang-Jin Lee; Kavehei, O; Yoon-Ki Hong; Tae Won Cho; Younggap You; Kyoungrok Cho; Eshraghian, K

2010-12-01

This paper presents the implementation of a 3-D architecture for a biomedical-imaging system based on a multilayered system-on-system structure. The architecture consists of a complementary metal-oxide semiconductor image sensor layer, memory, 3-D discrete wavelet transform (3D-DWT), 3-D Advanced Encryption Standard (3D-AES), and an RF transmitter as an add-on layer. Multilayer silicon (Si) stacking permits fabrication and optimization of individual layers by different processing technology to achieve optimal performance. Utilization of through silicon via scheme can address required low-power operation as well as high-speed performance. Potential benefits of 3-D vertical integration include an improved form factor as well as a reduction in the total wiring length, multifunctionality, power efficiency, and flexible heterogeneous integration. The proposed imaging architecture was simulated by using Cadence Spectre and Synopsys HSPICE while implementation was carried out by Cadence Virtuoso and Mentor Graphic Calibre.

The digital compensation technology system for automotive pressure sensor

NASA Astrophysics Data System (ADS)

Guo, Bin; Li, Quanling; Lu, Yi; Luo, Zai

2011-05-01

Piezoresistive pressure sensor be made of semiconductor silicon based on Piezoresistive phenomenon, has many characteristics. But since the temperature effect of semiconductor, the performance of silicon sensor is also changed by temperature, and the pressure sensor without temperature drift can not be produced at present. This paper briefly describe the principles of sensors, the function of pressure sensor and the various types of compensation method, design the detailed digital compensation program for automotive pressure sensor. Simulation-Digital mixed signal conditioning is used in this dissertation, adopt signal conditioning chip MAX1452. AVR singlechip ATMEGA128 and other apparatus; fulfill the design of digital pressure sensor hardware circuit and singlechip hardware circuit; simultaneously design the singlechip software; Digital pressure sensor hardware circuit is used to implementing the correction and compensation of sensor; singlechip hardware circuit is used to implementing to controll the correction and compensation of pressure sensor; singlechip software is used to implementing to fulfill compensation arithmetic. In the end, it implement to measure the output of sensor, and contrast to the data of non-compensation, the outcome indicates that the compensation precision of compensated sensor output is obviously better than non-compensation sensor, not only improving the compensation precision but also increasing the stabilization of pressure sensor.

Laser-induced damage threshold of camera sensors and micro-optoelectromechanical systems

NASA Astrophysics Data System (ADS)

Schwarz, Bastian; Ritt, Gunnar; Koerber, Michael; Eberle, Bernd

2017-03-01

The continuous development of laser systems toward more compact and efficient devices constitutes an increasing threat to electro-optical imaging sensors, such as complementary metal-oxide-semiconductors (CMOS) and charge-coupled devices. These types of electronic sensors are used in day-to-day life but also in military or civil security applications. In camera systems dedicated to specific tasks, micro-optoelectromechanical systems, such as a digital micromirror device (DMD), are part of the optical setup. In such systems, the DMD can be located at an intermediate focal plane of the optics and it is also susceptible to laser damage. The goal of our work is to enhance the knowledge of damaging effects on such devices exposed to laser light. The experimental setup for the investigation of laser-induced damage is described in detail. As laser sources, both pulsed lasers and continuous-wave (CW)-lasers are used. The laser-induced damage threshold is determined by the single-shot method by increasing the pulse energy from pulse to pulse or in the case of CW-lasers, by increasing the laser power. Furthermore, we investigate the morphology of laser-induced damage patterns and the dependence of the number of destructive device elements on the laser pulse energy or laser power. In addition to the destruction of single pixels, we observe aftereffects, such as persistent dead columns or rows of pixels in the sensor image.

Application of line-scanning microscopy using a linear sensor in semiconductor industry: shape and thickness measurements

NASA Astrophysics Data System (ADS)

Macedo, Milton P.; Correia, C. M. B. A.

2013-04-01

This work aims at showing the applicability of a scanning-stage bench-microscope in bright-field reflection mode for wirebonding inspection of integrated circuits (IC) as well as quality assurance of tracks in printed circuit boards (PCB). The main issues of our laboratorial prototype arise from the use of a linear image sensor taking advantage of its geometry to achieve lower acquisition time in comparison to traditional (pinhole) confocal approach. The use of a slit-detector is normally related to resolution degradation for details parallel to sensor. But an improvement will surely arise using light distribution along line pixels of the sensor which establishes a great advantage in comparison to (pure) slit detectors. The versatility of this bench-microscope affords excellent means to develop and test algorithms. Those to improve lateral resolution isotropy as well as image visualization and 3D mesh reconstruction under different setups namely illumination modes. Based on the results of these tests tests both wide-field illumination and parallel slit illumination and detection configurations were used in these two applications. Results from IC wire-bonding show the ability of the system to extract 3D information. A comparison of auto-focus images and 3D profiles obtained using different 3D reconstruction algorithms as well as a method for the determination of the diameter of the bond wire are presented. Measurements of PCB track width and thickness were performed and the comparison of these results from both longitudinal and transverse tracks stress the limitations of a lower spatial sampling rate induced by the resolution of object stage positioners.

Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction.

PubMed

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-10-21

High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.

Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

PubMed Central

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-01-01

High-response organic field-effect transistor (OFET)-based NO2 sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO2 analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO2. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO2 molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO2 sensors in future electronic nose and environment monitoring. PMID:27775653

Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor

PubMed Central

O’Sullivan, Thomas D.; Heitz, Roxana T.; Parashurama, Natesh; Barkin, David B.; Wooley, Bruce A.; Gambhir, Sanjiv S.; Harris, James S.; Levi, Ofer

2013-01-01

Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm3 and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecular probes in small animals. We integrated a critical enabling component, a complementary metal-oxide semiconductor (CMOS) read-out integrated circuit, which digitized the fluorescence signal to achieve autofluorescence-limited sensitivity. After surgical implantation of the lightweight sensor for two weeks, we obtained continuous and dynamic fluorophore measurements while the subject was un-anesthetized and mobile. The technology demonstrated here represents a critical step in the path toward untethered optical sensing using an integrated optoelectronic implant. PMID:24009996

Context-based automated defect classification system using multiple morphological masks

DOEpatents

Gleason, Shaun S.; Hunt, Martin A.; Sari-Sarraf, Hamed

2002-01-01

Automatic detection of defects during the fabrication of semiconductor wafers is largely automated, but the classification of those defects is still performed manually by technicians. This invention includes novel digital image analysis techniques that generate unique feature vector descriptions of semiconductor defects as well as classifiers that use these descriptions to automatically categorize the defects into one of a set of pre-defined classes. Feature extraction techniques based on multiple-focus images, multiple-defect mask images, and segmented semiconductor wafer images are used to create unique feature-based descriptions of the semiconductor defects. These feature-based defect descriptions are subsequently classified by a defect classifier into categories that depend on defect characteristics and defect contextual information, that is, the semiconductor process layer(s) with which the defect comes in contact. At the heart of the system is a knowledge database that stores and distributes historical semiconductor wafer and defect data to guide the feature extraction and classification processes. In summary, this invention takes as its input a set of images containing semiconductor defect information, and generates as its output a classification for the defect that describes not only the defect itself, but also the location of that defect with respect to the semiconductor process layers.

Diffraction-based optical sensor detection system for capture-restricted environments

NASA Astrophysics Data System (ADS)

Khandekar, Rahul M.; Nikulin, Vladimir V.

2008-04-01

The use of digital cameras and camcorders in prohibited areas presents a growing problem. Piracy in the movie theaters results in huge revenue loss to the motion picture industry every year, but still image and video capture may present even a bigger threat if performed in high-security locations. While several attempts are being made to address this issue, an effective solution is yet to be found. We propose to approach this problem using a very commonly observed optical phenomenon. Cameras and camcorders use CCD and CMOS sensors, which include a number of photosensitive elements/pixels arranged in a certain fashion. Those are photosites in CCD sensors and semiconductor elements in CMOS sensors. They are known to reflect a small fraction of incident light, but could also act as a diffraction grating, resulting in the optical response that could be utilized to identify the presence of such a sensor. A laser-based detection system is proposed that accounts for the elements in the optical train of the camera, as well as the eye-safety of the people who could be exposed to optical beam radiation. This paper presents preliminary experimental data, as well as the proof-of-concept simulation results.

Ultrafast and Ultrasensitive Gas Sensors Derived from a Large Fermi-Level Shift in the Schottky Junction with Sieve-Layer Modulation.

PubMed

Cheng, Ching-Cheng; Wu, Chia-Lin; Liao, Yu-Ming; Chen, Yang-Fang

2016-07-13

Gas sensors play an important role in numerous fields, covering a wide range of applications, including intelligent systems and detection of harmful and toxic gases. Even though they have attracted much attention, the response time on the order of seconds to minutes is still very slow. To circumvent the existing problems, here, we provide a seminal attempt with the integration of graphene, semiconductor, and an addition sieve layer forming a nanocomposite gas sensor with ultrahigh sensitivity and ultrafast response. The designed sieve layer has a suitable band structure that can serve as a blocking layer to prevent transfer of the charges induced by adsorbed gas molecules into the underlying semiconductor layer. We found that the sensitivity can be reduced to the parts per million level, and the ultrafast response of around 60 ms is unprecedented compared with published graphene-based gas sensors. The achieved high performance can be interpreted well by the large change of the Fermi level of graphene due to its inherent nature of the low density of states and blocking of the sieve layer to prevent charge transfer from graphene to the underlying semiconductor layer. Accordingly, our work is very useful and timely for the development of gas sensors with high performance for practical applications.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W. (Inventor); Xu, Jennifer C. (Inventor); Lukco, Dorothy (Inventor)

2011-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x ). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Miniaturized metal (metal alloy)/ PdO.sub.x/SiC hydrogen and hydrocarbon gas sensors

NASA Technical Reports Server (NTRS)

Xu, Jennifer C. (Inventor); Hunter, Gary W. (Inventor); Lukco, Dorothy (Inventor)

2008-01-01

A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdO.sub.x). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600.degree. C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Soft gamma-ray detector for the ASTRO-H Mission

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Blandford, Roger; Enoto, Teruaki; Kataoka, Jun; Kawaharada, Madoka; Kokubun, Motohide; Laurent, Philippe; Lebrun, François; Limousin, Olivier; Madejski, Greg; Makishima, Kazuo; Mizuno, Tsunefumi; Nakamori, Takeshi; Nakazawa, Kazuhiro; Mori, Kunishiro; Odaka, Hirokazu; Ohno, Masanori; Ohta, Masayuki; Sato, Goro; Sato, Rie; Takeda, Shin'ichiro; Takahashi, Hiromitsu; Takahashi, Tadayuki; Tanaka, Takaaki; Tashiro, Makoto; Terada, Yukikatsu; Uchiyama, Hideki; Uchiyama, Yasunobu; Yamada, Shinya; Yatsu, Yoichi; Yonetoku, Daisuke; Yuasa, Takayuki

2012-09-01

ASTRO-H is the next generation JAXA X-ray satellite, intended to carry instruments with broad energy coverage and exquisite energy resolution. The Soft Gamma-ray Detector (SGD) is one of ASTRO-H instruments and will feature wide energy band (60-600 keV) at a background level 10 times better than the current instruments on orbit. The SGD is complimentary to ASTRO-H’s Hard X-ray Imager covering the energy range of 5-80 keV. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield where Compton kinematics is utilized to reject backgrounds. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and CdTe (cadmium telluride) sensors. Good energy resolution is afforded by semiconductor sensors, and it results in good background rejection capability due to better constraints on Compton kinematics. Utilization of Compton kinematics also makes the SGD sensitive to the gamma-ray polarization, opening up a new window to study properties of gamma-ray emission processes. In this paper, we will present the detailed design of the SGD and the results of the final prototype developments and evaluations. Moreover, we will also present expected performance based on the measurements with prototypes.

Effects of increasing number of rings on the ion sensing ability of CdSe quantum dots: a theoretical study

NASA Astrophysics Data System (ADS)

Malik, Pragati; Kakkar, Rita

2018-04-01

A computational study on the structural and electronic properties of a special class of artificial atoms, known as quantum dots, has been carried out. These are semiconductors with unique optical and electronic properties and have been widely used in various applications, such as bio-sensing, bio-imaging, and so on. We have considered quantum dots belonging to II-VI types of semiconductors, due to their wide band gap, possession of large exciton binding energies and unique optical and electronic properties. We have studied their applications as chemical ion sensors by beginning with the study of the ion sensing ability of (CdSe) n ( n = 3, 6, 9 which are in the size range of 0.24, 0.49, 0.74 nm, respectively) quantum dots for cations of the zinc triad, namely Zn2+, Cd2+, Hg2+, and various anions of biological and environmental importance, and studied the effect of increasing number of rings on their ion sensing ability. The various structural, electronic, and optical properties, their interaction energies, and charge transfer on interaction with metal ions and anions have been calculated and reported. Our studies indicate that the CdSe quantum dots can be employed as sensors for both divalent cations and anions, but they can sense cations better than anions.

Polymer waveguide grating sensor integrated with a thin-film photodetector

PubMed Central

Song, Fuchuan; Xiao, Jing; Xie, Antonio Jou; Seo, Sang-Woo

2014-01-01

This paper presents a planar waveguide grating sensor integrated with a photodetector (PD) for on-chip optical sensing systems which are suitable for diagnostics in the field and in-situ measurements. III–V semiconductor-based thin-film PD is integrated with a polymer based waveguide grating device on a silicon platform. The fabricated optical sensor successfully discriminates optical spectral characteristics of the polymer waveguide grating from the on-chip PD. In addition, its potential use as a refractive index sensor is demonstrated. Based on a planar waveguide structure, the demonstrated sensor chip may incorporate multiple grating waveguide sensing regions with their own optical detection PDs. In addition, the demonstrated processing is based on a post-integration process which is compatible with silicon complementary metal-oxide semiconductor (CMOS) electronics. Potentially, this leads a compact, chip-scale optical sensing system which can monitor multiple physical parameters simultaneously without need for external signal processing. PMID:24466407

Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haur Kao, Chyuan; Chun Liu, Che; Ueng, Herng-Yih

2014-05-14

Multianalyte electrolyte–insulator–semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na{sup +}, K{sup +}, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed formore » use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.« less

SOI CMOS Imager with Suppression of Cross-Talk

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Zheng, Xingyu; Cunningham, Thomas J.; Seshadri, Suresh; Sun, Chao

2009-01-01

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure

NASA Astrophysics Data System (ADS)

Lin, Yi-Ting; Huang, Chien-Shiang; Chow, Lee; Lan, Jyun-Ming; Yang, Chia-Ming; Chang, Liann-Be; Lai, Chao-Sung

2013-12-01

An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95 mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.

Process simulation in digital camera system

NASA Astrophysics Data System (ADS)

Toadere, Florin

2012-06-01

The goal of this paper is to simulate the functionality of a digital camera system. The simulations cover the conversion from light to numerical signal and the color processing and rendering. We consider the image acquisition system to be linear shift invariant and axial. The light propagation is orthogonal to the system. We use a spectral image processing algorithm in order to simulate the radiometric properties of a digital camera. In the algorithm we take into consideration the transmittances of the: light source, lenses, filters and the quantum efficiency of a CMOS (complementary metal oxide semiconductor) sensor. The optical part is characterized by a multiple convolution between the different points spread functions of the optical components. We use a Cooke triplet, the aperture, the light fall off and the optical part of the CMOS sensor. The electrical part consists of the: Bayer sampling, interpolation, signal to noise ratio, dynamic range, analog to digital conversion and JPG compression. We reconstruct the noisy blurred image by blending different light exposed images in order to reduce the photon shot noise, also we filter the fixed pattern noise and we sharpen the image. Then we have the color processing blocks: white balancing, color correction, gamma correction, and conversion from XYZ color space to RGB color space. For the reproduction of color we use an OLED (organic light emitting diode) monitor. The analysis can be useful to assist students and engineers in image quality evaluation and imaging system design. Many other configurations of blocks can be used in our analysis.

Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

NASA Astrophysics Data System (ADS)

Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

2018-01-01

Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2011-10-11

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Optical devices featuring textured semiconductor layers

DOEpatents

Moustakas, Theodore D [Dover, MA; Cabalu, Jasper S [Cary, NC

2012-08-07

A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Biomolecule/nanomaterial hybrid systems for nanobiotechnology.

PubMed

Tel-Vered, Ran; Yehezkeli, Omer; Willner, Itamar

2012-01-01

The integration of biomolecules with metallic or semiconductor nanoparticles or carbon nanotubes yields new hybrid nanostructures of unique features that combine the properties of the biomolecules and of the nano-elements. These unique features of the hybrid biomolecule/nanoparticle systems provide the basis for the rapid development of the area of nanobiotechnology. Recent advances in the implementation of hybrid materials consisting of biomolecules and metallic nanoparticles or semiconductor quantum dots will be discussed. The following topics will be exemplified: (i) The electrical wiring of redox enzymes with electrodes by means of metallic nanoparticles or carbon nanotubes, and the application of the modified electrodes as amperometric biosensors or for the construction of biofuel cells. (ii) The biocatalytic growth of metallic nanoparticles as a means to construct optical or electrical sensors. (iii) The functionalization of semiconductor quantum dots with biomolecules and the application of the hybrid nanostructures for developing different optical sensors, including intracellular sensor systems. (iv) The use of biomolecule-metallic nanoparticle nanostructures as templates for growing metallic nanowires, and the construction of fuel-driven nano-transporters.

Förster Resonance Energy Transfer between Quantum Dot Donors and Quantum Dot Acceptors

PubMed Central

Chou, Kenny F.; Dennis, Allison M.

2015-01-01

Förster (or fluorescence) resonance energy transfer amongst semiconductor quantum dots (QDs) is reviewed, with particular interest in biosensing applications. The unique optical properties of QDs provide certain advantages and also specific challenges with regards to sensor design, compared to other FRET systems. The brightness and photostability of QDs make them attractive for highly sensitive sensing and long-term, repetitive imaging applications, respectively, but the overlapping donor and acceptor excitation signals that arise when QDs serve as both the donor and acceptor lead to high background signals from direct excitation of the acceptor. The fundamentals of FRET within a nominally homogeneous QD population as well as energy transfer between two distinct colors of QDs are discussed. Examples of successful sensors are highlighted, as is cascading FRET, which can be used for solar harvesting. PMID:26057041

IR in Norway

NASA Astrophysics Data System (ADS)

Haakenaasen, Randi; Lovold, Stian

2003-01-01

Infrared technology in Norway started at the Norwegian Defense Research Establishment (FFI) in the 1960s, and has since then spread to universities, other research institutes and industry. FFI has a large, integrated IR activity that includes research and development in IR detectors, optics design, optical coatings, advanced dewar design, modelling/simulation of IR scenes, and image analysis. Part of the integrated activity is a laboratory for more basic research in materials science and semiconductor physics, in which thin films of CdHgTe are grown by molecular beam epitaxy and processed into IR detectors by various techniques. FFI also has a lot of experience in research and development of tunable infrared lasers for various applications. Norwegian industrial activities include production of infrared homing anti-ship missiles, laser rangefinders, various infrared gas sensors, hyperspectral cameras, and fiberoptic sensor systems for structural health monitoring and offshore oil well diagnostics.

Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

PubMed Central

Elia, Angela; Lugarà, Pietro Mario; Di Franco, Cinzia; Spagnolo, Vincenzo

2009-01-01

The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques. PMID:22303143

DynAMITe: a prototype large area CMOS APS for breast cancer diagnosis using x-ray diffraction measurements

NASA Astrophysics Data System (ADS)

Konstantinidis, A.; Anaxagoras, T.; Esposito, M.; Allinson, N.; Speller, R.

2012-03-01

X-ray diffraction studies are used to identify specific materials. Several laboratory-based x-ray diffraction studies were made for breast cancer diagnosis. Ideally a large area, low noise, linear and wide dynamic range digital x-ray detector is required to perform x-ray diffraction measurements. Recently, digital detectors based on Complementary Metal-Oxide- Semiconductor (CMOS) Active Pixel Sensor (APS) technology have been used in x-ray diffraction studies. Two APS detectors, namely Vanilla and Large Area Sensor (LAS), were developed by the Multidimensional Integrated Intelligent Imaging (MI-3) consortium to cover a range of scientific applications including x-ray diffraction. The MI-3 Plus consortium developed a novel large area APS, named as Dynamically Adjustable Medical Imaging Technology (DynAMITe), to combine the key characteristics of Vanilla and LAS with a number of extra features. The active area (12.8 × 13.1 cm2) of DynaMITe offers the ability of angle dispersive x-ray diffraction (ADXRD). The current study demonstrates the feasibility of using DynaMITe for breast cancer diagnosis by identifying six breast-equivalent plastics. Further work will be done to optimize the system in order to perform ADXRD for identification of suspicious areas of breast tissue following a conventional mammogram taken with the same sensor.

High speed CMOS acquisition system based on FPGA embedded image processing for electro-optical measurements

NASA Astrophysics Data System (ADS)

Rosu-Hamzescu, Mihnea; Polonschii, Cristina; Oprea, Sergiu; Popescu, Dragos; David, Sorin; Bratu, Dumitru; Gheorghiu, Eugen

2018-06-01

Electro-optical measurements, i.e., optical waveguides and plasmonic based electrochemical impedance spectroscopy (P-EIS), are based on the sensitive dependence of refractive index of electro-optical sensors on surface charge density, modulated by an AC electrical field applied to the sensor surface. Recently, P-EIS has emerged as a new analytical tool that can resolve local impedance with high, optical spatial resolution, without using microelectrodes. This study describes a high speed image acquisition and processing system for electro-optical measurements, based on a high speed complementary metal-oxide semiconductor (CMOS) sensor and a field-programmable gate array (FPGA) board. The FPGA is used to configure CMOS parameters, as well as to receive and locally process the acquired images by performing Fourier analysis for each pixel, deriving the real and imaginary parts of the Fourier coefficients for the AC field frequencies. An AC field generator, for single or multi-sine signals, is synchronized with the high speed acquisition system for phase measurements. The system was successfully used for real-time angle-resolved electro-plasmonic measurements from 30 Hz up to 10 kHz, providing results consistent to ones obtained by a conventional electrical impedance approach. The system was able to detect amplitude variations with a relative variation of ±1%, even for rather low sampling rates per period (i.e., 8 samples per period). The PC (personal computer) acquisition and control software allows synchronized acquisition for multiple FPGA boards, making it also suitable for simultaneous angle-resolved P-EIS imaging.

Intra-cavity upconversion to 631 nm of images illuminated by an eye-safe ASE source at 1550 nm.

PubMed

Torregrosa, A J; Maestre, H; Capmany, J

2015-11-15

We report an image wavelength upconversion system. The system mixes an incoming image at around 1550 nm (eye-safe region) illuminated by an amplified spontaneous emission (ASE) fiber source with a Gaussian beam at 1064 nm generated in a continuous-wave diode-pumped Nd(3+):GdVO(4) laser. Mixing takes place in a periodically poled lithium niobate (PPLN) crystal placed intra-cavity. The upconverted image obtained by sum-frequency mixing falls around the 631 nm red spectral region, well within the spectral response of standard silicon focal plane array bi-dimensional sensors, commonly used in charge-coupled device (CCD) or complementary metal-oxide-semiconductor (CMOS) video cameras, and of most image intensifiers. The use of ASE illumination benefits from a noticeable increase in the field of view (FOV) that can be upconverted with regard to using coherent laser illumination. The upconverted power allows us to capture real-time video in a standard nonintensified CCD camera.

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun

1994-01-01

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Smart point-of-care systems for molecular diagnostics based on nanotechnology: whole blood glucose analysis

NASA Astrophysics Data System (ADS)

Devadhasan, Jasmine P.; Kim, Sanghyo

2015-07-01

Complementary metal oxide semiconductor (CMOS) image sensors are received great attention for their high efficiency in biological applications. The present work describes a CMOS image sensor-based whole blood glucose monitoring system through a point-of-care (POC) approach. A simple poly-ethylene terephthalate (PET) film chip was developed to carry out the enzyme kinetic reaction at various concentrations of blood glucose. In this technique, assay reagent was adsorbed onto amine functionalized silica (AFSiO2) nanoparticles in order to achieve glucose oxidation on the PET film chip. The AFSiO2 nanoparticles can immobilize the assay reagent with an electrostatic attraction and eased to develop the opaque platform which was technically suitable chip to analyze by the camera module. The oxidized glucose then produces a green color according to the glucose concentration and is analyzed by the camera module as a photon detection technique. The photon number decreases with increasing glucose concentration. The simple sensing approach, utilizing enzyme immobilized AFSiO2 nanoparticle chip and assay detection method was developed for quantitative glucose measurement.

A Parkinson's disease measurement system using laser lines and a CMOS image sensor.

PubMed

Chang, Rong-Seng; Chiu, Jen-Hwey; Chen, Fang-Pey; Chen, Jyh-Cheng; Yang, Jen-Lin

2011-01-01

This paper presents a non-invasive, non-contact system for the measurement of the arterial dorsum manus vibration waveforms of Parkinson disease patients. The laser line method is applied to detect the dorsum manus vibration in rest and postural situations. The proposed measurement system mainly consists of a laser diode and a low cost complementary metal-oxide semiconductor (CMOS) image sensor. Laser line and centroid methods are combined with the Fast Fourier Transform (FFT) in this study. The shape and frequency and relative frequency of the dorsum manus vibration waveforms can be detected rapidly using our Parkinson's disease measurement system. A laser line near the wrist joint is used as the testing line. The experimental results show an obvious increase in the amplitude and frequency of dorsum manus variation in the measured region in patients suffering from Parkinson's disease, indicating the obvious effects of the disease. Both in postural and rest state measurements, as the patient disease age increases the vibration frequency increases. The measurement system is well suited for evaluating and pre-diagnosing early stage Parkinson's disease.

Direct protein detection with a nano-interdigitated array gate MOSFET.

PubMed

Tang, Xiaohui; Jonas, Alain M; Nysten, Bernard; Demoustier-Champagne, Sophie; Blondeau, Franoise; Prévot, Pierre-Paul; Pampin, Rémi; Godfroid, Edmond; Iñiguez, Benjamin; Colinge, Jean-Pierre; Raskin, Jean-Pierre; Flandre, Denis; Bayot, Vincent

2009-08-15

A new protein sensor is demonstrated by replacing the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a nano-interdigitated array (nIDA). The sensor is able to detect the binding reaction of a typical antibody Ixodes ricinus immunosuppressor (anti-Iris) protein at a concentration lower than 1 ng/ml. The sensor exhibits a high selectivity and reproducible specific detection. We provide a simple model that describes the behavior of the sensor and explains the origin of its high sensitivity. The simulated and experimental results indicate that the drain current of nIDA-gate MOSFET sensor is significantly increased with the successive binding of the thiol layer, Iris and anti-Iris protein layers. It is found that the sensor detection limit can be improved by well optimizing the geometrical parameters of nIDA-gate MOSFET. This nanobiosensor, with real-time and label-free capabilities, can easily be used for the detection of other proteins, DNA, virus and cancer markers. Moreover, an on-chip associated electronics nearby the sensor can be integrated since its fabrication is compatible with complementary metal oxide semiconductor (CMOS) technology.

High-Performance Flexible Force and Temperature Sensing Array with a Robust Structure

NASA Astrophysics Data System (ADS)

Kim, Min-Seok; Song, Han-Wook; Park, Yon-Kyu

We have developed a flexible tactile sensor array capable of sensing physical quantities, e.g. force and temperature with high-performances and high spatial resolution. The fabricated tactile sensor consists of 8 × 8 force measuring array with 1 mm spacing and a thin metal (copper) temperature sensor. The flexible force sensing array consists of sub-millimetre-size bar-shaped semi-conductor strain gage array attached to a thin and flexible printed circuit board covered by stretchable elastomeric material on both sides. This design incorporates benefits of both materials; the semi-conductor's high performance and the polymer's mechanical flexibility and robustness, while overcoming their drawbacks of those two materials. Special fabrication processes, so called “dry-transfer technique” have been used to fabricate the tactile sensor along with standard micro-fabrication processes.

Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

PubMed Central

Gu, Haoshuang; Wang, Zhao; Hu, Yongming

2012-01-01

Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

PubMed Central

Irokawa, Yoshihiro

2011-01-01

In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

NASA Tech Briefs, October 2006

NASA Technical Reports Server (NTRS)

2006-01-01

Topics covered include: Protein Sensors Based on Optical Ring Resonators; Phase Sensor for Aligning a Segmented Telescope Mirror; Control Software for Advanced Video Guidance Sensor; Generating Control Commands From Gestures Sensed by EMG; Multiple-Flat-Panel System Displays Multidimensional Data; 3D X-Ray Luggage-Screening System; Probe Station and Near-Field Scanner for Testing Antennas; Photodetector Arrays for Multicolor Visible/Infrared Imaging; Semiconductor Bolometers Give Background-Limited Performance; Multichannel X-Band Dielectric-Resonator Oscillator; Automatic Alignment of Displacement-Measuring Interferometer; Earth Observing System Data Gateway; Power User Interface; Mercury Shopping Cart Interface; Cassini Archive Tracking System; Architecture Adaptive Computing Environment; Computing Fault Displacements from Surface Deformations; Oxygen-Permeable, Hydrophobic Membranes of Silanized alpha-Al2O3; SiC Composite Turbine Vanes; Retaining Device for the Interior Structure of a Spacecraft Payload; Tool for Torquing Circular Electrical-Connector Collars; System for Continuous Deaeration of Hydraulic Oil; Solar-Powered Cooler and Heater for an Automobile Interior; Improved Oxygen-Beam Texturing of Glucose-Monitoring Optics; Tool for Two Types of Friction Stir Welding; Stationary Apparatus Would Apply Forces of Walking to Feet; Instrument Would Detect and Collect Biological Aerosols; Boundary Condition for Modeling Semiconductor Nanostructures; Miniature Distillation Column for Producing LOX From Air; Even Illumination from Fiber-Optic-Coupled Laser Diodes; Optically Driven Deformable Mirrors; Algorithm for Automated Detection of Edges of Clouds; Exploiting Quantum Resonance to Solve Combinatorial Problems; Hybrid Terrain Database; On Release of Microbe-Laden Particles from Mars Landers; A Concept for Run-Time Support of the Chapel Language; Thermoelectric Inhomogeneities in (Ag(sub 1-y)SbTe2)(sub x)(PbTe)(sub 1-x); and Spacecraft Escape Capsule.

Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

NASA Astrophysics Data System (ADS)

Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R. H.; Plaisier, J. R.; Antonelli, M.

2017-03-01

In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

TiO2-Based Nanoheterostructures for Promoting Gas Sensitivity Performance: Designs, Developments, and Prospects

PubMed Central

Wang, Yuan; Wu, Tao; Zhou, Yun; Meng, Chuanmin; Zhu, Wenjun; Liu, Lixin

2017-01-01

Gas sensors based on titanium dioxide (TiO2) have attracted much public attention during the past decades due to their excellent potential for applications in environmental pollution remediation, transportation industries, personal safety, biology, and medicine. Numerous efforts have therefore been devoted to improving the sensing performance of TiO2. In those effects, the construct of nanoheterostructures is a promising tactic in gas sensing modification, which shows superior sensing performance to that of the single component-based sensors. In this review, we briefly summarize and highlight the development of TiO2-based heterostructure gas sensing materials with diverse models, including semiconductor/semiconductor nanoheterostructures, noble metal/semiconductor nanoheterostructures, carbon-group-materials/semiconductor nano- heterostructures, and organic/inorganic nanoheterostructures, which have been investigated for effective enhancement of gas sensing properties through the increase of sensitivity, selectivity, and stability, decrease of optimal work temperature and response/recovery time, and minimization of detectable levels. PMID:28846621

Miniaturized photoacoustic spectrometer

DOEpatents

Okandan, Murat; Robinson, Alex; Nielson, Gregory N.; Resnick, Paul J.

2016-08-09

A low-power miniaturized photoacoustic sensor uses an optical microphone made by semiconductor fabrication techniques, and optionally allows for all-optical communication to and from the sensor. This allows integration of the photoacoustic sensor into systems with special requirements, such as those that would be reactive in an electrical discharge condition. The photoacoustic sensor can also be operated in various other modes with wide application flexibility.

Thermal Flow Sensors for Harsh Environments.

PubMed

Balakrishnan, Vivekananthan; Phan, Hoang-Phuong; Dinh, Toan; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-09-08

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving parts and higher sensitivity. In recent years, various thermal flow sensors have been developed to operate at temperatures above 500 °C. Microelectronic technologies such as silicon-on-insulator (SOI), and complementary metal-oxide semiconductor (CMOS) have been used to make thermal flow sensors. Thermal sensors with various heating and sensing materials such as metals, semiconductors, polymers and ceramics can be selected according to the targeted working temperature. The performance of these thermal flow sensors is evaluated based on parameters such as thermal response time, flow sensitivity. The data from thermal flow sensors reviewed in this paper indicate that the sensing principle is suitable for the operation under harsh environments. Finally, the paper discusses the packaging of the sensor, which is the most important aspect of any high-temperature sensing application. Other than the conventional wire-bonding, various novel packaging techniques have been developed for high-temperature application.

Eddy current sensor concepts for the Bridgman growth of semiconductors

NASA Astrophysics Data System (ADS)

Dharmasena, Kumar P.; Wadley, Haydn N. G.

1997-03-01

Electromagnetic finite element methods have been used to identify eddy current sensor designs for monitoring CdTe vertical Bridgman crystal growth. A model system consisting of pairs of silicon cylinders with electrical conductivities similar to those of solid and liquid CdTe has been used to evaluate the multifrequency response of several sensors designed for locating and characterizing the curvature of liquid-solid interfaces during vertical Bridgman growth. At intermediate frequencies (100-800 kHz), the sensor's imaginary impedance monotonically increases as interfacial curvature changes from concave to convex or the interface location moves upwards through the sensor. The experimental data are in excellent agreement with theoretical predictions. At higher test frequencies (˜ 5 MHz), the test circuit's parasitics contribute to the sensor's response. Even so, the predicted trends with interface location/curvature were found to be still preserved, and the experiments confirm that the sensor's high frequency response depends more on interface location and has only a small sensitivity to curvature. Multifrequency data obtained from these types of sensors have the potential to separately discriminate the location and the shape of liquid-solid interfaces during the vertical Bridgman growth of CdTe and other semiconductor materials of higher electrical conductivity.

Thermal Flow Sensors for Harsh Environments

PubMed Central

Dinh, Toan; Dao, Dzung Viet

2017-01-01

Flow sensing in hostile environments is of increasing interest for applications in the automotive, aerospace, and chemical and resource industries. There are thermal and non-thermal approaches for high-temperature flow measurement. Compared to their non-thermal counterparts, thermal flow sensors have recently attracted a great deal of interest due to the ease of fabrication, lack of moving parts and higher sensitivity. In recent years, various thermal flow sensors have been developed to operate at temperatures above 500 °C. Microelectronic technologies such as silicon-on-insulator (SOI), and complementary metal-oxide semiconductor (CMOS) have been used to make thermal flow sensors. Thermal sensors with various heating and sensing materials such as metals, semiconductors, polymers and ceramics can be selected according to the targeted working temperature. The performance of these thermal flow sensors is evaluated based on parameters such as thermal response time, flow sensitivity. The data from thermal flow sensors reviewed in this paper indicate that the sensing principle is suitable for the operation under harsh environments. Finally, the paper discusses the packaging of the sensor, which is the most important aspect of any high-temperature sensing application. Other than the conventional wire-bonding, various novel packaging techniques have been developed for high-temperature application. PMID:28885595

Semiconductor acceleration sensor

NASA Astrophysics Data System (ADS)

Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

1996-09-01

This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

Laser-induced damage threshold of camera sensors and micro-opto-electro-mechanical systems

NASA Astrophysics Data System (ADS)

Schwarz, Bastian; Ritt, Gunnar; Körber, Michael; Eberle, Bernd

2016-10-01

The continuous development of laser systems towards more compact and efficient devices constitutes an increasing threat to electro-optical imaging sensors such as complementary metal-oxide-semiconductors (CMOS) and charge-coupled devices (CCD). These types of electronic sensors are used in day-to-day life but also in military or civil security applications. In camera systems dedicated to specific tasks, also micro-opto-electro-mechanical systems (MOEMS) like a digital micromirror device (DMD) are part of the optical setup. In such systems, the DMD can be located at an intermediate focal plane of the optics and it is also susceptible to laser damage. The goal of our work is to enhance the knowledge of damaging effects on such devices exposed to laser light. The experimental setup for the investigation of laser-induced damage is described in detail. As laser sources both pulsed lasers and continuous-wave (CW) lasers are used. The laser-induced damage threshold (LIDT) is determined by the single-shot method by increasing the pulse energy from pulse to pulse or in the case of CW-lasers, by increasing the laser power. Furthermore, we investigate the morphology of laser-induced damage patterns and the dependence of the number of destructed device elements on the laser pulse energy or laser power. In addition to the destruction of single pixels, we observe aftereffects like persisting dead columns or rows of pixels in the sensor image.

Semiconductor Laser Multi-Spectral Sensing and Imaging

PubMed Central

Le, Han Q.; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers. PMID:22315555

Semiconductor laser multi-spectral sensing and imaging.

PubMed

Le, Han Q; Wang, Yang

2010-01-01

Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers.

Printed photodetectors

NASA Astrophysics Data System (ADS)

Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario

2015-10-01

Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems.

Passive absolute age and temperature history sensor

DOEpatents

Robinson, Alex; Vianco, Paul T.

2015-11-10

A passive sensor for historic age and temperature sensing, including a first member formed of a first material, the first material being either a metal or a semiconductor material and a second member formed of a second material, the second material being either a metal or a semiconductor material. A surface of the second member is in contact with a surface of the first member such that, over time, the second material of the second member diffuses into the first material of the first member. The rate of diffusion for the second material to diffuse into the first material depends on a temperature of the passive sensor. One of the electrical conductance, the electrical capacitance, the electrical inductance, the optical transmission, the optical reflectance, or the crystalline structure of the passive sensor depends on the amount of the second material that has diffused into the first member.

Increasing cell-device adherence using cultured insect cells for receptor-based biosensors

NASA Astrophysics Data System (ADS)

Terutsuki, Daigo; Mitsuno, Hidefumi; Sakurai, Takeshi; Okamoto, Yuki; Tixier-Mita, Agnès; Toshiyoshi, Hiroshi; Mita, Yoshio; Kanzaki, Ryohei

2018-03-01

Field-effect transistor (FET)-based biosensors have a wide range of applications, and a bio-FET odorant sensor, based on insect (Sf21) cells expressing insect odorant receptors (ORs) with sensitivity and selectivity, has emerged. To fully realize the practical application of bio-FET odorant sensors, knowledge of the cell-device interface for efficient signal transfer, and a reliable and low-cost measurement system using the commercial complementary metal-oxide semiconductor (CMOS) foundry process, will be indispensable. However, the interfaces between Sf21 cells and sensor devices are largely unknown, and electrode materials used in the commercial CMOS foundry process are generally limited to aluminium, which is reportedly toxic to cells. In this study, we investigated Sf21 cell-device interfaces by developing cross-sectional specimens. Calcium imaging of Sf21 cells expressing insect ORs was used to verify the functions of Sf21 cells as odorant sensor elements on the electrode materials. We found that the cell-device interface was approximately 10 nm wide on average, suggesting that the adhesion mechanism of Sf21 cells may differ from that of other cells. These results will help to construct accurate signal detection from expressed insect ORs using FETs.

Increasing cell–device adherence using cultured insect cells for receptor-based biosensors

PubMed Central

Mitsuno, Hidefumi; Sakurai, Takeshi; Okamoto, Yuki; Tixier-Mita, Agnès; Toshiyoshi, Hiroshi; Mita, Yoshio; Kanzaki, Ryohei

2018-01-01

Field-effect transistor (FET)-based biosensors have a wide range of applications, and a bio-FET odorant sensor, based on insect (Sf21) cells expressing insect odorant receptors (ORs) with sensitivity and selectivity, has emerged. To fully realize the practical application of bio-FET odorant sensors, knowledge of the cell–device interface for efficient signal transfer, and a reliable and low-cost measurement system using the commercial complementary metal-oxide semiconductor (CMOS) foundry process, will be indispensable. However, the interfaces between Sf21 cells and sensor devices are largely unknown, and electrode materials used in the commercial CMOS foundry process are generally limited to aluminium, which is reportedly toxic to cells. In this study, we investigated Sf21 cell–device interfaces by developing cross-sectional specimens. Calcium imaging of Sf21 cells expressing insect ORs was used to verify the functions of Sf21 cells as odorant sensor elements on the electrode materials. We found that the cell–device interface was approximately 10 nm wide on average, suggesting that the adhesion mechanism of Sf21 cells may differ from that of other cells. These results will help to construct accurate signal detection from expressed insect ORs using FETs. PMID:29657822

Novel approach to improve the attitude update rate of a star tracker.

PubMed

Zhang, Shuo; Xing, Fei; Sun, Ting; You, Zheng; Wei, Minsong

2018-03-05

The star tracker is widely used in attitude control systems of spacecraft for attitude measurement. The attitude update rate of a star tracker is important to guarantee the attitude control performance. In this paper, we propose a novel approach to improve the attitude update rate of a star tracker. The electronic Rolling Shutter (RS) imaging mode of the complementary metal-oxide semiconductor (CMOS) image sensor in the star tracker is applied to acquire star images in which the star spots are exposed with row-to-row time offsets, thereby reflecting the rotation of star tracker at different times. The attitude estimation method with a single star spot is developed to realize the multiple attitude updates by a star image, so as to reach a high update rate. The simulation and experiment are performed to verify the proposed approaches. The test results demonstrate that the proposed approach is effective and the attitude update rate of a star tracker is increased significantly.

3D-printed eagle eye: Compound microlens system for foveated imaging

PubMed Central

Thiele, Simon; Arzenbacher, Kathrin; Gissibl, Timo; Giessen, Harald; Herkommer, Alois M.

2017-01-01

We present a highly miniaturized camera, mimicking the natural vision of predators, by 3D-printing different multilens objectives directly onto a complementary metal-oxide semiconductor (CMOS) image sensor. Our system combines four printed doublet lenses with different focal lengths (equivalent to f = 31 to 123 mm for a 35-mm film) in a 2 × 2 arrangement to achieve a full field of view of 70° with an increasing angular resolution of up to 2 cycles/deg field of view in the center of the image. The footprint of the optics on the chip is below 300 μm × 300 μm, whereas their height is <200 μm. Because the four lenses are printed in one single step without the necessity for any further assembling or alignment, this approach allows for fast design iterations and can lead to a plethora of different miniaturized multiaperture imaging systems with applications in fields such as endoscopy, optical metrology, optical sensing, surveillance drones, or security. PMID:28246646

Strategies for Improving the Performance of Sensors Based on Organic Field-Effect Transistors.

PubMed

Wu, Xiaohan; Mao, Shun; Chen, Junhong; Huang, Jia

2018-04-01

Organic semiconductors (OSCs) have been extensively studied as sensing channel materials in field-effect transistors due to their unique charge transport properties. Stimulation caused by its environmental conditions can readily change the charge-carrier density and mobility of OSCs. Organic field-effect transistors (OFETs) can act as both signal transducers and signal amplifiers, which greatly simplifies the device structure. Over the past decades, various sensors based on OFETs have been developed, including physical sensors, chemical sensors, biosensors, and integrated sensor arrays with advanced functionalities. However, the performance of OFET-based sensors still needs to be improved to meet the requirements from various practical applications, such as high sensitivity, high selectivity, and rapid response speed. Tailoring molecular structures and micro/nanofilm structures of OSCs is a vital strategy for achieving better sensing performance. Modification of the dielectric layer and the semiconductor/dielectric interface is another approach for improving the sensor performance. Moreover, advanced sensory functionalities have been achieved by developing integrated device arrays. Here, a brief review of strategies used for improving the performance of OFET sensors is presented, which is expected to inspire and provide guidance for the design of future OFET sensors for various specific and practical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Benchtop and Animal Validation of a Projective Imaging System for Potential Use in Intraoperative Surgical Guidance

PubMed Central

Gan, Qi; Wang, Dong; Ye, Jian; Zhang, Zeshu; Wang, Xinrui; Hu, Chuanzhen; Shao, Pengfei; Xu, Ronald X.

2016-01-01

We propose a projective navigation system for fluorescence imaging and image display in a natural mode of visual perception. The system consists of an excitation light source, a monochromatic charge coupled device (CCD) camera, a host computer, a projector, a proximity sensor and a Complementary metal–oxide–semiconductor (CMOS) camera. With perspective transformation and calibration, our surgical navigation system is able to achieve an overall imaging speed higher than 60 frames per second, with a latency of 330 ms, a spatial sensitivity better than 0.5 mm in both vertical and horizontal directions, and a projection bias less than 1 mm. The technical feasibility of image-guided surgery is demonstrated in both agar-agar gel phantoms and an ex vivo chicken breast model embedding Indocyanine Green (ICG). The biological utility of the system is demonstrated in vivo in a classic model of ICG hepatic metabolism. Our benchtop, ex vivo and in vivo experiments demonstrate the clinical potential for intraoperative delineation of disease margin and image-guided resection surgery. PMID:27391764

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas

PubMed Central

Kuo, Chin-Guo; Chen, Jung-Hsuan; Chao, Yi-Chieh; Chen, Po-Lin

2017-01-01

In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 1019 cm−3 and 24.7 cm2∙V−1∙s−1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm. PMID:29295573

Fabrication of a P3HT-ZnO Nanowires Gas Sensor Detecting Ammonia Gas.

PubMed

Kuo, Chin-Guo; Chen, Jung-Hsuan; Chao, Yi-Chieh; Chen, Po-Lin

2017-12-25

In this study, an organic-inorganic semiconductor gas sensor was fabricated to detect ammonia gas. An inorganic semiconductor was a zinc oxide (ZnO) nanowire array produced by atomic layer deposition (ALD) while an organic material was a p-type semiconductor, poly(3-hexylthiophene) (P3HT). P3HT was suitable for the gas sensing application due to its high hole mobility, good stability, and good electrical conductivity. In this work, P3HT was coated on the zinc oxide nanowires by the spin coating to form an organic-inorganic heterogeneous interface of the gas sensor for detecting ammonia gas. The thicknesses of the P3HT were around 462 nm, 397 nm, and 277 nm when the speeds of the spin coating were 4000 rpm, 5000 rpm, and 6000 rpm, respectively. The electrical properties and sensing characteristics of the gas sensing device at room temperature were evaluated by Hall effect measurement and the sensitivity of detecting ammonia gas. The results of Hall effect measurement for the P3HT-ZnO nanowires semiconductor with 462 nm P3HT film showed that the carrier concentration and the mobility were 2.7 × 10 19 cm -3 and 24.7 cm²∙V -1 ∙s -1 respectively. The gas sensing device prepared by the P3HT-ZnO nanowires semiconductor had better sensitivity than the device composed of the ZnO film and P3HT film. Additionally, this gas sensing device could reach a maximum sensitivity around 11.58 per ppm.

Carbon monoxide sensor and method of use thereof

DOEpatents

McDaniel; Anthony H. , Medlin; J. Will , Bastasz; Robert J.

2007-09-04

Carbon monoxide sensors suitable for use in hydrogen feed streams and methods of use thereof are disclosed. The sensors are palladium metal/insulator/semiconductor (Pd-MIS) sensors which may possess a gate metal layer having uniform, Type 1, or non-uniform, Type 2, film morphology. Type 1 sensors display an increased sensor response in the presence of carbon monoxide while Type 2 sensors display a decreased response to carbon monoxide. The methods and sensors disclosed herein are particularly suitable for use in proton exchange membrane fuel cells (PEMFCs).

CMOS compatible IR sensors by cytochrome c protein

NASA Astrophysics Data System (ADS)

Liao, Chien-Jen; Su, Guo-Dung

2013-09-01

In recent years, due to the progression of the semiconductor industrial, the uncooled Infrared sensor - microbolometer has opened the opportunity for achieving low cost infrared imaging systems for both military and commercial applications. Therefore, various fabrication processes and different materials based microbolometer have been developed sequentially. The cytochrome c (protein) thin film has be reported high temperature coefficient of resistance (TCR), which is related to the performance of microbolometer directly. Hence the superior TCR value will increase the performance of microbolometer. In this paper, we introduced a novel fabrication process using aluminum which is compatible with the Taiwan Semiconductor Manufacture Company (TSMC) D35 2P4M process as the main structure material, which benefits the device to integrate with readout integrated circuit (ROIC).The aluminum split structure is suspended by sacrificial layer utilizing the standard photolithography technology and chemical etching. The height and thickness of the structure are already considered. Besides, cytochrome c solutions were ink-jetted onto the aluminum structure by using the inkjet printer, applying precise control of the Infrared absorbing layer. In measurement, incident Infrared radiation can be detected and later the heat can be transmitted to adjacent pads to readout the signal. This approach applies an inexpensive and simple fabrication process and makes the device suitable for integration. In addition, the performance can be further improved with low noise readout circuits.

Cameras for digital microscopy.

PubMed

Spring, Kenneth R

2013-01-01

This chapter reviews the fundamental characteristics of charge-coupled devices (CCDs) and related detectors, outlines the relevant parameters for their use in microscopy, and considers promising recent developments in the technology of detectors. Electronic imaging with a CCD involves three stages--interaction of a photon with the photosensitive surface, storage of the liberated charge, and readout or measurement of the stored charge. The most demanding applications in fluorescence microscopy may require as much as four orders of greater magnitude sensitivity. The image in the present-day light microscope is usually acquired with a CCD camera. The CCD is composed of a large matrix of photosensitive elements (often referred to as "pixels" shorthand for picture elements, which simultaneously capture an image over the entire detector surface. The light-intensity information for each pixel is stored as electronic charge and is converted to an analog voltage by a readout amplifier. This analog voltage is subsequently converted to a numerical value by a digitizer situated on the CCD chip, or very close to it. Several (three to six) amplifiers are required for each pixel, and to date, uniform images with a homogeneous background have been a problem because of the inherent difficulties of balancing the gain in all of the amplifiers. Complementary metal oxide semiconductor sensors also exhibit relatively high noise associated with the requisite high-speed switching. Both of these deficiencies are being addressed, and sensor performance is nearing that required for scientific imaging. Copyright © 1998 Elsevier Inc. All rights reserved.

Macroporous Semiconductors

PubMed Central

Föll, Helmut; Leisner, Malte; Cojocaru, Ala; Carstensen, Jürgen

2010-01-01

Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

Monolayer borophene electrode for effective elimination of both the Schottky barrier and strong electric field effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. Z., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn; Xiong, S. J.; Wu, X. L., E-mail: lzliu@nju.edu.cn, E-mail: hkxlwu@nju.edu.cn

2016-08-08

The formation of Schottky barriers between 2D semiconductors and traditional metallic electrodes has greatly limited the application of 2D semiconductors in nanoelectronic and optoelectronic devices. In this study, metallic borophene was used as a substitute for the traditional noble metal electrode to contact with the 2D semiconductor. Theoretical calculations demonstrated that no Schottky barrier exists in the borophene/2D semiconductor heterostructure. The contact remains ohmic even with a strong electric field applied. This finding provides a way to construct 2D electronic devices and sensors with greatly enhanced performance.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

PubMed

Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

2017-03-07

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm -1 ) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis

NASA Astrophysics Data System (ADS)

Zhao, C.; Vassiljev, N.; Konstantinidis, A. C.; Speller, R. D.; Kanicki, J.

2017-03-01

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm-1) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on CMOS APS image sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zujun, E-mail: wangzujun@nint.ac.cn; Chen, Wei; Sheng, Jiangkun

The combined reactor neutron beam and {sup 60}Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented. The samples are manufactured in the standard 0.35-μm CMOS technology. Two samples were first exposed to {sup 60}Co γ-rays up to the total ionizing dose (TID) level of 200 krad(Si) at the dose rates of 50.0 and 0.2 rad(Si)/s, and then exposed to neutron fluence up to 1 × 10{sup 11} n/cm{sup 2} (1-MeV equivalent neutron fluence). One sample was first exposed to neutron fluence up to 1 × 10{supmore » 11} n/cm{sup 2} (1-MeV equivalent neutron fluence), and then exposed to {sup 60}Co γ-rays up to the TID level of 200 krad(Si) at the dose rate of 0.2 rad(Si)/s. The mean dark signal (K{sub D}), the dark signal non-uniformity (DSNU), and the noise (V{sub N}) versus the total dose and neutron fluence has been investigated. The degradation mechanisms of CMOS APS image sensors have been analyzed, especially for the interaction induced by neutron displacement damage and TID damage.« less

Zinc Alloys for the Fabrication of Semiconductor Devices

NASA Technical Reports Server (NTRS)

Ryu, Yungryel; Lee, Tae S.

2009-01-01

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and visible transmitters and detectors, high-frequency radar, biomedical imaging, chemical compound identification, molecular identification and structure, gas sensors, imaging systems, and for the fundamental studies of atoms, molecules, gases, vapors, and solids.

Wireless Multiplexed Surface Acoustic Wave Sensors Project

NASA Technical Reports Server (NTRS)

Youngquist, Robert C.

2014-01-01

Wireless Surface Acoustic Wave (SAW) Sensor is a new technology for obtaining multiple, real-time measurements under extreme environmental conditions. This project plans to develop a wireless multiplexed sensor system that uses SAW sensors, with no batteries or semiconductors, that are passive and rugged, can operate down to cryogenic temperatures and up to hundreds of degrees C, and can be used to sense a wide variety of parameters over reasonable distances (meters).

Semiconductor crystal high resolution imager

NASA Technical Reports Server (NTRS)

Matteson, James (Inventor); Levin, Craig S. (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Solid state potentiometric gaseous oxide sensor

NASA Technical Reports Server (NTRS)

Wachsman, Eric D. (Inventor); Azad, Abdul Majeed (Inventor)

2003-01-01

A solid state electrochemical cell (10a) for measuring the concentration of a component of a gas mixture (12) includes first semiconductor electrode (14) and second semiconductor electrode (16) formed from first and second semiconductor materials, respectively. The materials are selected so as to undergo a change in resistivity upon contacting a gas component, such as CO or NO. An electrolyte (18) is provided in contact with the first and second semiconductor electrodes. A reference cell can be included in contact with the electrolyte. Preferably, a voltage response of the first semiconductor electrode is opposite in slope direction to that of the second semiconductor electrode to produce a voltage response equal to the sum of the absolute values of the control system uses measured pollutant concentrations to direct adjustment of engine combustion conditions.

Flexible MEMS: A novel technology to fabricate flexible sensors and electronics

NASA Astrophysics Data System (ADS)

Tu, Hongen

This dissertation presents the design and fabrication techniques used to fabricate flexible MEMS (Micro Electro Mechanical Systems) devices. MEMS devices and CMOS(Complementary Metal-Oxide-Semiconductor) circuits are traditionally fabricated on rigid substrates with inorganic semiconductor materials such as Silicon. However, it is highly desirable that functional elements like sensors, actuators or micro fluidic components to be fabricated on flexible substrates for a wide variety of applications. Due to the fact that flexible substrate is temperature sensitive, typically only low temperature materials, such as polymers, metals, and organic semiconductor materials, can be directly fabricated on flexible substrates. A novel technology based on XeF2(xenon difluoride) isotropic silicon etching and parylene conformal coating, which is able to monolithically incorporate high temperature materials and fluidic channels, was developed at Wayne State University. The technology was first implemented in the development of out-of-plane parylene microneedle arrays that can be individually addressed by integrated flexible micro-channels. These devices enable the delivery of chemicals with controlled temporal and spatial patterns and allow us to study neurotransmitter-based retinal prosthesis. The technology was further explored by adopting the conventional SOI-CMOS processes. High performance and high density CMOS circuits can be first fabricated on SOI wafers, and then be integrated into flexible substrates. Flexible p-channel MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors) were successfully integrated and tested. Integration of pressure sensors and flow sensors based on single crystal silicon has also been demonstrated. A novel smart yarn technology that enables the invisible integration of sensors and electronics into fabrics has been developed. The most significant advantage of this technology is its post-MEMS and post-CMOS compatibility. Various high-performance MEMS devices and electronics can be integrated into flexible substrates. The potential of our technology is enormous. Many wearable and implantable devices can be developed based on this technology.

Conception and realization of a semiconductor based 240 GHz full 3D MIMO imaging system

NASA Astrophysics Data System (ADS)

Weisenstein, Christian; Kahl, Matthias; Friederich, Fabian; Haring Bolívar, Peter

2017-02-01

Multiple-input multiple-output (MIMO) imaging systems in the terahertz frequency range have a high potential in the field of non-destructive testing (NDT). With such systems it is possible to detect defects in composite materials, for example cracks or delaminations in fiber composites. To investigate mass-produced products it is necessary to study the objects in close to real-time on a conveyor without affecting the production cycle time. In this work we present the conception and realization of a 3D MIMO imaging system for in-line investigation of composite materials and structures. To achieve a lateral resolution of 1 mm, in order to detect such small defects in composite materials with a moderate number of elements, precise sensor design is crucial. In our approach we use the effective aperture concept. The designed sparse array consists of 32 transmitters and 30 receivers based on planar semiconductor components. High range resolution is achieved by an operating frequency between 220 GHz and 260 GHz in a stepped frequency continuous wave (SFCW) setup. A matched filter approach is used to simulate the reconstructed 3D image through the array. This allows the evaluation of the designed array geometry in regard of resolution and side lobe level. In contrast to earlier demonstrations, in which synthetic reconstruction is only performed in a 2D plane, an optics-free full 3D recon- struction has been implemented in our concept. Based on this simulation we designed an array geometry that enables to resolve objects with a resolution smaller than 1mm and moderate side lobe level.

Real-time Imaging Orientation Determination System to Verify Imaging Polarization Navigation Algorithm

PubMed Central

Lu, Hao; Zhao, Kaichun; Wang, Xiaochu; You, Zheng; Huang, Kaoli

2016-01-01

Bio-inspired imaging polarization navigation which can provide navigation information and is capable of sensing polarization information has advantages of high-precision and anti-interference over polarization navigation sensors that use photodiodes. Although all types of imaging polarimeters exist, they may not qualify for the research on the imaging polarization navigation algorithm. To verify the algorithm, a real-time imaging orientation determination system was designed and implemented. Essential calibration procedures for the type of system that contained camera parameter calibration and the inconsistency of complementary metal oxide semiconductor calibration were discussed, designed, and implemented. Calibration results were used to undistort and rectify the multi-camera system. An orientation determination experiment was conducted. The results indicated that the system could acquire and compute the polarized skylight images throughout the calibrations and resolve orientation by the algorithm to verify in real-time. An orientation determination algorithm based on image processing was tested on the system. The performance and properties of the algorithm were evaluated. The rate of the algorithm was over 1 Hz, the error was over 0.313°, and the population standard deviation was 0.148° without any data filter. PMID:26805851

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1994-01-01

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

An integrated semiconductor device enabling non-optical genome sequencing.

PubMed

Rothberg, Jonathan M; Hinz, Wolfgang; Rearick, Todd M; Schultz, Jonathan; Mileski, William; Davey, Mel; Leamon, John H; Johnson, Kim; Milgrew, Mark J; Edwards, Matthew; Hoon, Jeremy; Simons, Jan F; Marran, David; Myers, Jason W; Davidson, John F; Branting, Annika; Nobile, John R; Puc, Bernard P; Light, David; Clark, Travis A; Huber, Martin; Branciforte, Jeffrey T; Stoner, Isaac B; Cawley, Simon E; Lyons, Michael; Fu, Yutao; Homer, Nils; Sedova, Marina; Miao, Xin; Reed, Brian; Sabina, Jeffrey; Feierstein, Erika; Schorn, Michelle; Alanjary, Mohammad; Dimalanta, Eileen; Dressman, Devin; Kasinskas, Rachel; Sokolsky, Tanya; Fidanza, Jacqueline A; Namsaraev, Eugeni; McKernan, Kevin J; Williams, Alan; Roth, G Thomas; Bustillo, James

2011-07-20

The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. We show the performance of the system by sequencing three bacterial genomes, its robustness and scalability by producing ion chips with up to 10 times as many sensors and sequencing a human genome.

Light-controlled biphasic current stimulator IC using CMOS image sensors for high-resolution retinal prosthesis and in vitro experimental results with rd1 mouse.

PubMed

Oh, Sungjin; Ahn, Jae-Hyun; Lee, Sangmin; Ko, Hyoungho; Seo, Jong Mo; Goo, Yong-Sook; Cho, Dong-il Dan

2015-01-01

Retinal prosthetic devices stimulate retinal nerve cells with electrical signals proportional to the incident light intensities. For a high-resolution retinal prosthesis, it is necessary to reduce the size of the stimulator pixels as much as possible, because the retinal nerve cells are concentrated in a small area of approximately 5 mm × 5 mm. In this paper, a miniaturized biphasic current stimulator integrated circuit is developed for subretinal stimulation and tested in vitro. The stimulator pixel is miniaturized by using a complementary metal-oxide-semiconductor (CMOS) image sensor composed of three transistors. Compared to a pixel that uses a four-transistor CMOS image sensor, this new design reduces the pixel size by 8.3%. The pixel size is further reduced by simplifying the stimulation-current generating circuit, which provides a 43.9% size reduction when compared to the design reported to be the most advanced version to date for subretinal stimulation. The proposed design is fabricated using a 0.35 μm bipolar-CMOS-DMOS process. Each pixel is designed to fit in a 50 μ m × 55 μm area, which theoretically allows implementing more than 5000 pixels in the 5 mm × 5 mm area. Experimental results show that a biphasic current in the range of 0 to 300 μA at 12 V can be generated as a function of incident light intensities. Results from in vitro experiments with rd1 mice indicate that the proposed method can be effectively used for retinal prosthesis with a high resolution.

Direct conversion semiconductor detectors in positron emission tomography

NASA Astrophysics Data System (ADS)

Cates, Joshua W.; Gu, Yi; Levin, Craig S.

2015-05-01

Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, D.; Liu, C. C.; Wu, Q. H.R

1995-01-01

Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Physicochemical and Electrophysical Properties of Metal/Semiconductor Containing Nanostructured Composites

NASA Astrophysics Data System (ADS)

Gerasimov, G. N.; Gromov, V. F.; Trakhtenberg, L. I.

2018-06-01

The properties of nanostructured composites based on metal oxides and metal-polymer materials are analyzed, along with ways of preparing them. The effect the interaction between metal and semiconductor nanoparticles has on the conductivity, photoconductivity, catalytic activity, and magnetic, dielectric, and sensor properties of nanocomposites is discussed. It is shown that as a result of this interaction, a material can acquire properties that do not exist in systems of isolated particles. The transfer of electrons between metal particles of different sizes in polymeric matrices leads to specific dielectric losses, and to an increase in the rate and a change in the direction of chemical reactions catalyzed by these particles. The interaction between metal-oxide semiconductor particles results in the electronic and chemical sensitization of sensor effects in nanostructured composite materials. Studies on creating molecular machines (Brownian motors), devices for magnetic recording of information, and high-temperature superconductors based on nanostructured systems are reviewed.

Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

PubMed Central

Boukhayma, Assim; Peizerat, Arnaud; Enz, Christian

2016-01-01

This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level optimizations, device choices and circuit techniques at the pixel and column level of the readout chain are derived and discussed. The noise reduction techniques that can be implemented at the column and pixel level are verified by transient noise simulations, measurement and results from recently-published low noise CIS. We show how recently-reported process refinement, leading to the reduction of the sense node capacitance, can be combined with an optimal in-pixel source follower design to reach a sub-0.3erms- read noise at room temperature. This paper also discusses the impact of technology scaling on the CIS read noise. It shows how designers can take advantage of scaling and how the Metal-Oxide-Semiconductor (MOS) transistor gate leakage tunneling current appears as a challenging limitation. For this purpose, both simulation results of the gate leakage current and 1/f noise data reported from different foundries and technology nodes are used.

Humidity and illumination organic semiconductor copper phthalocyanine sensor for environmental monitoring.

PubMed

Karimov, K S; Qazi, I; Khan, T A; Draper, P H; Khalid, F A; Mahroof-Tahir, M

2008-06-01

In this investigation properties of organic semiconductor copper phthalocyanine (CuPc) capacitive humidity and illumination sensors were studied. Organic thin film was deposited by vacuum evaporation on a glass substrate with silver surface-type electrodes to form the Ag/CuPc/Ag sensor. The capacitance of the samples was evaluated at room temperature in the relative humidity range of 35-92%. It was observed that capacitance of the Ag/CuPc/Ag sensor increases with increase in humidity. The ratio of the relative capacitance to relative humidity was about 200. It is assumed that in general the capacitive response of the sensor is associated with polarization due to absorption of water molecules and transfer of charges (electrons and holes). It was observed that under filament lamp illumination of up to 1,000 lx the capacitance of the Ag/CuPc/Ag photo capacitive detectors increased continuously by 20% as compared to dark condition. It is assumed that photo capacitive response of the sensor is associated with polarization due to transfer of photo-generated electrons and holes. An equivalent circuit of the Ag/CuPc/Ag capacitive humidity and illumination sensor was developed. Humidity and illumination dependent capacitance properties of this sensor make it attractive for use in humidity and illumination multi-meters. The sensor may be used in instruments for environmental monitoring of humidity and illumination.

Transparent, flexible, and stretchable WS2 based humidity sensors for electronic skin.

PubMed

Guo, Huayang; Lan, Changyong; Zhou, Zhifei; Sun, Peihua; Wei, Dapeng; Li, Chun

2017-05-18

Skin-mountable chemical sensors using flexible chemically sensitive nanomaterials are of great interest for electronic skin (e-skin) application. To build these sensors, the emerging atomically thin two-dimensional (2D) layered semiconductors could be a good material candidate. Herein, we show that a large-area WS 2 film synthesized by sulfurization of a tungsten film exhibits high humidity sensing performance both in natural flat and high mechanical flexible states (bending curvature down to 5 mm). The conductivity of as-synthesized WS 2 increases sensitively over a wide relative humidity range (up to 90%) with fast response and recovery times in a few seconds. By using graphene as electrodes and thin polydimethylsiloxane (PDMS) as substrate, a transparent, flexible, and stretchable humidity sensor was fabricated. This senor can be well laminated onto skin and shows stable water moisture sensing behaviors in the undeformed relaxed state as well as under compressive and tensile loadings. Furthermore, its high sensing performance enables real-time monitoring of human breath, indicating a potential mask-free breath monitoring for healthcare application. We believe that such a skin-activity compatible WS 2 humidity sensor may shed light on developing low power consumption wearable chemical sensors based on 2D semiconductors.

Two-Axis Direct Fluid Shear Stress Sensor for Aerodynamic Applications

NASA Technical Reports Server (NTRS)

Bajikar, Sateesh S.; Scott, Michael A.; Adcock, Edward E.

2011-01-01

This miniature or micro-sized semiconductor sensor design provides direct, nonintrusive measurement of skin friction or wall shear stress in fluid flow situations in a two-axis configuration. The sensor is fabricated by microelectromechanical system (MEMS) technology, enabling small size and multiple, low-cost reproductions. The sensors may be fabricated by bonding a sensing element wafer to a fluid-coupling element wafer. Using this layered machine structure provides a truly three-dimensional device.

Interface and gate bias dependence responses of sensing organic thin-film transistors.

PubMed

Tanese, Maria Cristina; Fine, Daniel; Dodabalapur, Ananth; Torsi, Luisa

2005-11-15

The effects of the exposure of organic thin-film transistors, comprising different organic semiconductors and gate dielectrics, to 1-pentanol are investigated. The transistor sensors exhibited an increase or a decrease of the transient source-drain current in the presence of the analyte, most likely as a result of a trapping or of a doping process of the organic active layer. The occurrence of these two effects, that can also coexist, depend on the gate-dielectric/organic semiconductor interface and on the applied gate field. Evidence of a systematic and sizable response enhancement for an OTFT sensor operated in the enhanced mode is also presented.

A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position

PubMed Central

Manoli, Kyriaki; Dumitru, Liviu Mihai; Mulla, Mohammad Yusuf; Magliulo, Maria; Di Franco, Cinzia; Santacroce, Maria Vittoria; Scamarcio, Gaetano; Torsi, Luisa

2014-01-01

Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made. PMID:25215940

Novel method of optical image registration in wide wavelength range using matrix of piezoelectric crystals

NASA Astrophysics Data System (ADS)

Pigarev, Aleksey V.; Bazarov, Timur O.; Fedorov, Vladimir V.; Ryabushkin, Oleg A.

2018-02-01

Most modern systems of the optical image registration are based on the matrices of photosensitive semiconductor heterostructures. However, measurement of radiation intensities up to several MW/cm2 -level using such detectors is a great challenge because semiconductor elements have low optical damage threshold. Reflecting or absorbing filters that can be used for attenuation of radiation intensity, as a rule, distort beam profile. Furthermore, semiconductor based devices have relatively narrow measurement wavelength bandwidth. We introduce a novel matrix method of optical image registration. This approach doesn't require any attenuation when measuring high radiation intensities. A sensitive element is the matrix made of thin transparent piezoelectric crystals that absorb just a small part of incident optical power. Each crystal element has its own set of intrinsic (acoustic) vibration modes. These modes can be exited due to the inverse piezoelectric effect when the external electric field is applied to the crystal sample providing that the field frequency corresponds to one of the vibration mode frequencies. Such piezoelectric resonances (PR) can be observed by measuring the radiofrequency response spectrum of the crystal placed between the capacitor plates. PR frequencies strongly depend on the crystal temperature. Temperature calibration of PR frequencies is conducted in the uniform heating conditions. In the case a crystal matrix is exposed to the laser radiation the incident power can be obtained separately for each crystal element by measuring its PR frequency kinetics providing that the optical absorption coefficient is known. The operating wavelength range of such sensor is restricted by the transmission bandwidth of the applied crystals. A plane matrix constituting of LiNbO3 crystals was assembled in order to demonstrate the possibility of application of the proposed approach. The crystal elements were placed between two electrodes forming a capacitor which was interconnected to the lock-in detection system. The radiofrequency response to the applied voltage from the generator was measured simultaneously for all elements.

Microsensors based on GaN semiconductors covalently functionalized with luminescent Ru(II) complexes.

PubMed

López-Gejo, Juan; Arranz, Antonio; Navarro, Alvaro; Palacio, Carlos; Muñoz, Elías; Orellana, Guillermo

2010-02-17

Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as a key step in the development of innovative sensing devices in which the indicator support (semiconductor) plays the role of both support and excitation source. Luminescence emission decays and time-resolved emission spectra confirm the presence of the dye on the semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O(2) sensitivity of the new device is comparable to those of other ruthenium-based sensor systems. This achievement paves the way to a new generation of integrable ultracompact microsensors that combine semiconductor emitter-probe assemblies.

Imaging the motion of electrons in 2D semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Dani, Keshav

Technological progress since the late 20th century has centered on semiconductor devices, such as transistors, diodes, and solar cells. At the heart of these devices, is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. In this talk, we combine femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy to image the motion of photoexcited electrons from high-energy to low-energy states in a 2D InSe/GaAs heterostructure exhibiting a type-II band alignment. At the instant of photoexcitation, energy-resolved photoelectron images reveal a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observe the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we make a movie lasting a few tens of picoseconds of the electron transfer process in the photoexcited type-II heterostructure - a fundamental phenomenon in semiconductor devices like solar cells. Quantitative analysis and theoretical modeling of spatial variations in the video provide insight into future solar cells, electron dynamics in 2D materials, and other semiconductor devices.

Imaging the motion of electrons across semiconductor heterojunctions.

PubMed

Man, Michael K L; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E Laine; Krishna, M Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M; Dani, Keshav M

2017-01-01

Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure-a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

Imaging the motion of electrons across semiconductor heterojunctions

NASA Astrophysics Data System (ADS)

Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

2017-01-01

Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

Manipulating semiconductor colloidal stability through doping.

PubMed

Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

2014-10-10

The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

A survey and analysis of experimental hydrogen sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.

1992-01-01

In order to ascertain the applicability of hydrogen sensors to aerospace applications, a survey was conducted of promising experimental point-contact hydrogen sensors and their operation was analyzed. The techniques discussed are metal-oxide-semiconductor or MOS based sensors, catalytic resistor sensors, acoustic wave detectors, and pyroelectric detectors. All of these sensors depend on the interaction of hydrogen with Pd or a Pd-alloy. It is concluded that no single technique will meet the needs of aerospace applications but a combination of approaches is necessary. The most promising combination is an MOS based sensor with a catalytic resistor.

Semiconductor Ceramic Mn0.5Fe1.5O3-Fe2O3 from Natural Minerals as Ethanol Gas Sensors

NASA Astrophysics Data System (ADS)

Aliah, H.; Syarif, D. G.; Iman, R. N.; Sawitri, A.; Sanjaya WS, M.; Nurul Subkhi, M.; Pitriana, P.

2018-05-01

In this research, Mn and Fe-based ceramic gas sensing were fabricated and characterized. This research used natural mineral which is widely available in Indonesia and intended to observe the characteristics of Mn and Fe-based semiconducting material. Fabricating process of the thick films started by synthesizing the ceramic powder of Fe(OH)3 and Mn oxide material using the precipitation method. The deposition from precipitation method previously was calcined at a temperature of 800 °C to produce nanoparticle powder. Nanoparticle powder that contains Mn and Fe oxide was mixed with an organic vehicle (OV) to produce a paste. Then, the paste was layered on the alumina substrate by using the screen printing method. XRD method was utilized to characterize the thick film crystal structure that has been produced. XRD spectra showed that the ceramic layer was formed from the solid Mn0.5Fe1.5O3 (bixbyite) and Fe2O3. In addition, the electrical properties (resistance) examination was held in the room that contains air and ethanol to determine the sensor sensitivity of ethanol gas. The sensor resistance decreases as the ethanol gas was added, showing that the sensor was sensitive to ethanol gas and an n-type semiconductor. Gas sensor exhibit sensitive characterization of ethanol gas on the concentration of (100 to 300) ppm at a temperature of (150 to 200) °C. This showed that the Mn0.5Fe1.5O3-Fe2O3 ceramic semiconductor could be utilized as the ethanol gas detector.

Per-Pixel Coded Exposure for High-Speed and High-Resolution Imaging Using a Digital Micromirror Device Camera

PubMed Central

Feng, Wei; Zhang, Fumin; Qu, Xinghua; Zheng, Shiwei

2016-01-01

High-speed photography is an important tool for studying rapid physical phenomena. However, low-frame-rate CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) camera cannot effectively capture the rapid phenomena with high-speed and high-resolution. In this paper, we incorporate the hardware restrictions of existing image sensors, design the sampling functions, and implement a hardware prototype with a digital micromirror device (DMD) camera in which spatial and temporal information can be flexibly modulated. Combined with the optical model of DMD camera, we theoretically analyze the per-pixel coded exposure and propose a three-element median quicksort method to increase the temporal resolution of the imaging system. Theoretically, this approach can rapidly increase the temporal resolution several, or even hundreds, of times without increasing bandwidth requirements of the camera. We demonstrate the effectiveness of our method via extensive examples and achieve 100 fps (frames per second) gain in temporal resolution by using a 25 fps camera. PMID:26959023

Per-Pixel Coded Exposure for High-Speed and High-Resolution Imaging Using a Digital Micromirror Device Camera.

PubMed

Feng, Wei; Zhang, Fumin; Qu, Xinghua; Zheng, Shiwei

2016-03-04

High-speed photography is an important tool for studying rapid physical phenomena. However, low-frame-rate CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) camera cannot effectively capture the rapid phenomena with high-speed and high-resolution. In this paper, we incorporate the hardware restrictions of existing image sensors, design the sampling functions, and implement a hardware prototype with a digital micromirror device (DMD) camera in which spatial and temporal information can be flexibly modulated. Combined with the optical model of DMD camera, we theoretically analyze the per-pixel coded exposure and propose a three-element median quicksort method to increase the temporal resolution of the imaging system. Theoretically, this approach can rapidly increase the temporal resolution several, or even hundreds, of times without increasing bandwidth requirements of the camera. We demonstrate the effectiveness of our method via extensive examples and achieve 100 fps (frames per second) gain in temporal resolution by using a 25 fps camera.

Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments

PubMed Central

Peterson, Philip J. D.; Aujla, Amrita; Brundle, Alex G.; Thompson, Martin R.; Vande Hey, Josh; Leigh, Roland J.

2017-01-01

The potential of inexpensive Metal Oxide Semiconductor (MOS) gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS)) in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μg m−3 and ozone precision of 26.8 μg m−3, for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation) between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment. PMID:28753910

Practical Use of Metal Oxide Semiconductor Gas Sensors for Measuring Nitrogen Dioxide and Ozone in Urban Environments.

PubMed

Peterson, Philip J D; Aujla, Amrita; Grant, Kirsty H; Brundle, Alex G; Thompson, Martin R; Vande Hey, Josh; Leigh, Roland J

2017-07-19

The potential of inexpensive Metal Oxide Semiconductor (MOS) gas sensors to be used for urban air quality monitoring has been the topic of increasing interest in the last decade. This paper discusses some of the lessons of three years of experience working with such sensors on a novel instrument platform (Small Open General purpose Sensor (SOGS)) in the measurement of atmospheric nitrogen dioxide and ozone concentrations. Analytic methods for increasing long-term accuracy of measurements are discussed, which permit nitrogen dioxide measurements with 95% confidence intervals of 20.0 μ g m - 3 and ozone precision of 26.8 μ g m - 3 , for measurements over a period one month away from calibration, averaged over 18 months of such calibrations. Beyond four months from calibration, sensor drift becomes significant, and accuracy is significantly reduced. Successful calibration schemes are discussed with the use of controlled artificial atmospheres complementing deployment on a reference weather station exposed to the elements. Manufacturing variation in the attributes of individual sensors are examined, an experiment possible due to the instrument being equipped with pairs of sensors of the same kind. Good repeatability (better than 0.7 correlation) between individual sensor elements is shown. The results from sensors that used fans to push air past an internal sensor element are compared with mounting the sensors on the outside of the enclosure, the latter design increasing effective integration time to more than a day. Finally, possible paths forward are suggested for improving the reliability of this promising sensor technology for measuring pollution in an urban environment.

Simulated Performances of a Very High Energy Tomograph for Non-Destructive Characterization of large objects

NASA Astrophysics Data System (ADS)

Kistler, Marc; Estre, Nicolas; Merle, Elsa

2018-01-01

As part of its R&D activities on high-energy X-ray imaging for non-destructive characterization, the Nuclear Measurement Laboratory has started an upgrade of its imaging system currently implemented at the CEA-Cadarache center. The goals are to achieve a sub-millimeter spatial resolution and the ability to perform tomographies on very large objects (more than 100-cm standard concrete or 40-cm steel). This paper presentsresults on the detection part of the imaging system. The upgrade of the detection part needs a thorough study of the performance of two detectors: a series of CdTe semiconductor sensors and two arrays of segmented CdWO4 scintillators with different pixel sizes. This study consists in a Quantum Accounting Diagram (QAD) analysis coupled with Monte-Carlo simulations. The scintillator arrays are able to detect millimeter details through 140 cm of concrete, but are limited to 120 cm for smaller ones. CdTe sensors have lower but more stable performance, with a 0.5 mm resolution for 90 cm of concrete. The choice of the detector then depends on the preferred characteristic: the spatial resolution or the use on large volumes. The combination of the features of the source and the studies on the detectors gives the expected performance of the whole equipment, in terms of signal-over-noise ratio (SNR), spatial resolution and acquisition time.

Empowering smartphone users with sensor node for air quality measurement

NASA Astrophysics Data System (ADS)

Oletic, Dinko; Bilas, Vedran

2013-06-01

We present an architecture of a sensor node developed for use with smartphones for participatory sensing of air quality in urban environments. Our solution features inexpensive metal-oxide semiconductor gas sensors (MOX) for measurement of CO, O3, NO2 and VOC, along with sensors for ambient temperature and humidity. We focus on our design of sensor interface consisting of power-regulated heater temperature control, and the design of resistance sensing circuit. Accuracy of the sensor interface is characterized. Power consumption of the sensor node is analysed. Preliminary data obtained from the CO gas sensors in laboratory conditions and during the outdoor field-test is shown.

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

NASA Astrophysics Data System (ADS)

Watanabe, Shin; Tajima, Hiroyasu; Fukazawa, Yasushi; Ichinohe, Yuto; Takeda, Shin`ichiro; Enoto, Teruaki; Fukuyama, Taro; Furui, Shunya; Genba, Kei; Hagino, Kouichi; Harayama, Atsushi; Kuroda, Yoshikatsu; Matsuura, Daisuke; Nakamura, Ryo; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Ohta, Masayuki; Onishi, Mitsunobu; Saito, Shinya; Sato, Goro; Sato, Tamotsu; Takahashi, Tadayuki; Tanaka, Takaaki; Togo, Atsushi; Tomizuka, Shinji

2014-11-01

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60-600 keV) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CdTe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm×12 cm×12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CdTe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASICs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASICs, and the obtained energy resolutions with the prototype Si and CdTe pixel sensors are 1.0-2.0 keV (FWHM) at 60 keV and 1.6-2.5 keV (FWHM) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keV (FWHM) at 356 keV and 10.5 keV (FWHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%). Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype.

Research and Development Annual Report, 1992

NASA Technical Reports Server (NTRS)

1993-01-01

Issued as a companion to Johnson Space Center's Research and Technology Annual Report, which reports JSC accomplishments under NASA Research and Technology Operating Plan (RTOP) funding, this report describes 42 additional JSC projects that are funded through sources other than the RTOP. Emerging technologies in four major disciplines are summarized: space systems technology, medical and life sciences, mission operations, and computer systems. Although these projects focus on support of human spacecraft design, development, and safety, most have wide civil and commercial applications in areas such as advanced materials, superconductors, advanced semiconductors, digital imaging, high density data storage, high performance computers, optoelectronics, artificial intelligence, robotics and automation, sensors, biotechnology, medical devices and diagnosis, and human factors engineering.

Fabrication and characterization of spiral interdigitated electrodes based biosensor for salivary glucose detection

NASA Astrophysics Data System (ADS)

Adelyn, P. Y. P.; Hashim, U.; Arshad, M. K. Md; Voon, C. H.; Liu, Wei-Wen; Kahar, S. M.; Huda, A. R. N.; Lee, H. Cheun

2017-03-01

This work introduces the non-invasive glucose monitoring technique by using the Complementary Metal Oxide Semiconductor (CMOS) technologically fabricated spiral Interdigitated Electrodes (IDE) based biosensor. Scanning Electron Microscopy (SEM) image explores the morphology of spiral IDE while Energy Dispersive X-Ray (EDX) determines the elements induced in spiral IDE. Oral saliva of two patients are collected and tested on the spiral IDE sensor with electrical characterization as glucose detection results. However, both patients exhibit their glucose level characteristics inconsistently. Therefore, this work could be extended and enhanced by adding Glutaraldehyde in between 3-Aminoproply)triethoxysilane (APTES) modified and glucose oxidase (GOD) enzyme immobilized layer with FTIR validation for bonding attachment.

The JSC Research and Development Annual Report 1993

NASA Technical Reports Server (NTRS)

1994-01-01

Issued as a companion to Johnson Space Center's Research and Technology Annual Report, which reports JSC accomplishments under NASA Research and Technology Operating Plan (RTOP) funding, this report describes 47 additional projects that are funded through sources other than the RTOP. Emerging technologies in four major disciplines are summarized: space systems technology, medical and life sciences, mission operations, and computer systems. Although these projects focus on support of human spacecraft design, development, and safety, most have wide civil and commercial applications in areas such as advanced materials, superconductors, advanced semiconductors, digital imaging, high density data storage, high performance computers, optoelectronics, artificial intelligence, robotics and automation, sensors, biotechnology, medical devices and diagnosis, and human factors engineering.

Spatially resolved, diffuse reflectance imaging for subsurface pattern visualization toward development of a lensless imaging platform: phantom experiments

NASA Astrophysics Data System (ADS)

Schelkanova, Irina; Pandya, Aditya; Saiko, Guennadi; Nacy, Lidia; Babar, Hannan; Shah, Duoaud; Lilge, Lothar; Douplik, Alexandre

2016-01-01

A portable, spatially resolved, diffuse reflectance lensless imaging technique based on the charge-coupled device or complementary metal-oxide semiconductor sensor directly coupled to the fiber optic bundle is proposed for visualization of subsurface structures such as superficial microvasculature in the epithelium. We discuss an experimental method for emulating a lensless imaging setup via raster scanning a single fiber-optic cable over a microfluidic phantom containing periodic hemoglobin absorption contrast. To evaluate the ability of the technique to recover information about the subsurface linear structures, scattering layers formed of the Sylgard® 184 Silicone Elastomer and titanium dioxide were placed atop the microfluidic phantom. Thickness of the layers ranged from 0.2 to 0.7 mm, and the values of the reduced scattering coefficient (μs‧) were between 0.85 and 4.25 mm-1. The results demonstrate that fiber-optic, lensless platform can be used for two-dimensional imaging of absorbing inclusions in diffuse reflectance mode. In these experiments, it was shown that diffuse reflectance imaging can provide sufficient spatial sampling of the phantom for differentiation of 30 μm structural features of the embedded absorbing pattern inside the scattering media.

Gap-mode enhancement on MoS2 probed by functionalized tip-enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Alajlan, Abdulrahman M.; Voronine, Dmitri V.; Sinyukov, Alexander M.; Zhang, Zhenrong; Sokolov, Alexei V.; Scully, Marlan O.

2016-09-01

Surface enhancement of molecular spectroscopic signals has been widely used for sensing and nanoscale imaging. Because of the weak electromagnetic enhancement of Raman signals on semiconductors, it is motivating but challenging to study the electromagnetic effect separately from the chemical effects. We report tip-enhanced Raman scattering measurements on Au and bulk MoS2 substrates using a metallic tip functionalized with copper phthalocyanine molecules and demonstrate similar gap-mode enhancement on both substrates. We compare the experimental results with theoretical calculations to confirm the gap-mode enhancement on MoS2 using a well-established electrostatic model. The functionalized tip approach allows for suppressing the background and is ideal for separating electromagnetic and chemical enhancement mechanisms on various substrates. Our results may find a wide range of applications in MoS2-based devices, sensors, and metal-free nanoscale bio-imaging.

Miniaturized integration of a fluorescence microscope

PubMed Central

Ghosh, Kunal K.; Burns, Laurie D.; Cocker, Eric D.; Nimmerjahn, Axel; Ziv, Yaniv; Gamal, Abbas El; Schnitzer, Mark J.

2013-01-01

The light microscope is traditionally an instrument of substantial size and expense. Its miniaturized integration would enable many new applications based on mass-producible, tiny microscopes. Key prospective usages include brain imaging in behaving animals towards relating cellular dynamics to animal behavior. Here we introduce a miniature (1.9 g) integrated fluorescence microscope made from mass-producible parts, including semiconductor light source and sensor. This device enables high-speed cellular-level imaging across ∼0.5 mm2 areas in active mice. This capability allowed concurrent tracking of Ca2+ spiking in >200 Purkinje neurons across nine cerebellar microzones. During mouse locomotion, individual microzones exhibited large-scale, synchronized Ca2+ spiking. This is a mesoscopic neural dynamic missed by prior techniques for studying the brain at other length scales. Overall, the integrated microscope is a potentially transformative technology that permits distribution to many animals and enables diverse usages, such as portable diagnostics or microscope arrays for large-scale screens. PMID:21909102

Miniaturized integration of a fluorescence microscope.

PubMed

Ghosh, Kunal K; Burns, Laurie D; Cocker, Eric D; Nimmerjahn, Axel; Ziv, Yaniv; Gamal, Abbas El; Schnitzer, Mark J

2011-09-11

The light microscope is traditionally an instrument of substantial size and expense. Its miniaturized integration would enable many new applications based on mass-producible, tiny microscopes. Key prospective usages include brain imaging in behaving animals for relating cellular dynamics to animal behavior. Here we introduce a miniature (1.9 g) integrated fluorescence microscope made from mass-producible parts, including a semiconductor light source and sensor. This device enables high-speed cellular imaging across ∼0.5 mm2 areas in active mice. This capability allowed concurrent tracking of Ca2+ spiking in >200 Purkinje neurons across nine cerebellar microzones. During mouse locomotion, individual microzones exhibited large-scale, synchronized Ca2+ spiking. This is a mesoscopic neural dynamic missed by prior techniques for studying the brain at other length scales. Overall, the integrated microscope is a potentially transformative technology that permits distribution to many animals and enables diverse usages, such as portable diagnostics or microscope arrays for large-scale screens.

A superconducting focal plane array for ultraviolet, optical, and near-infrared astrophysics.

PubMed

Mazin, Benjamin A; Bumble, Bruce; Meeker, Seth R; O'Brien, Kieran; McHugh, Sean; Langman, Eric

2012-01-16

Microwave Kinetic Inductance Detectors, or MKIDs, have proven to be a powerful cryogenic detector technology due to their sensitivity and the ease with which they can be multiplexed into large arrays. A MKID is an energy sensor based on a photon-variable superconducting inductance in a lithographed microresonator, and is capable of functioning as a photon detector across the electromagnetic spectrum as well as a particle detector. Here we describe the first successful effort to create a photon-counting, energy-resolving ultraviolet, optical, and near infrared MKID focal plane array. These new Optical Lumped Element (OLE) MKID arrays have significant advantages over semiconductor detectors like charge coupled devices (CCDs). They can count individual photons with essentially no false counts and determine the energy and arrival time of every photon with good quantum efficiency. Their physical pixel size and maximum count rate is well matched with large telescopes. These capabilities enable powerful new astrophysical instruments usable from the ground and space. MKIDs could eventually supplant semiconductor detectors for most astronomical instrumentation, and will be useful for other disciplines such as quantum optics and biological imaging.

76 FR 68434 - 36(b)(1) Arms Sales Notification

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-04

... Trainers (THT), 50 Field Handling Trainers (FHT), 2 GCU-31A/E Gas Charging Units, 110 Night Sights, 1...), 50 Field Handling Trainers (FHT), 2 GCU-31A/E Gas Charging Units, 110 Night Sights, 1 STINGER Troop... software; optical coatings; ultraviolet sensors; semi-conductor detectors infrared band sensors...

Characterizing Semiconductor Alloys for Infrared Sensors

NASA Technical Reports Server (NTRS)

Lehoczky, B. S. L.; Szofran, F. R.; Martin, B. G.

1986-01-01

Report presents results of continuing program aimed at characterizing mercury/cadmium/tellurium alloys and eventually developing improved methods of preparing alloys for use as infrared sensors. Work covered by report includes series of differential thermal analysis (DTA) measurements of alloy compositions with x varied from 9 to 1 in 0.1 increments.

Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D. (Inventor); Bandara, Sumith V. (Inventor); Liu, John K. (Inventor)

2006-01-01

Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.

Miniaturized ceramic platform for metal oxide gas sensors array

NASA Astrophysics Data System (ADS)

Samotaev, N. N.

2016-10-01

In work is developing an ultra-fast, low cost and technology flexible process for production array of ceramic MEMS microhotplates for using in semiconductor gas sensors orientated to small series applications, where is sufficient to produce 10-100 samples with a different layout of heaters and membrane per day.

CMOS Image Sensor with a Built-in Lane Detector.

PubMed

Hsiao, Pei-Yung; Cheng, Hsien-Chein; Huang, Shih-Shinh; Fu, Li-Chen

2009-01-01

This work develops a new current-mode mixed signal Complementary Metal-Oxide-Semiconductor (CMOS) imager, which can capture images and simultaneously produce vehicle lane maps. The adopted lane detection algorithm, which was modified to be compatible with hardware requirements, can achieve a high recognition rate of up to approximately 96% under various weather conditions. Instead of a Personal Computer (PC) based system or embedded platform system equipped with expensive high performance chip of Reduced Instruction Set Computer (RISC) or Digital Signal Processor (DSP), the proposed imager, without extra Analog to Digital Converter (ADC) circuits to transform signals, is a compact, lower cost key-component chip. It is also an innovative component device that can be integrated into intelligent automotive lane departure systems. The chip size is 2,191.4 × 2,389.8 μm, and the package uses 40 pin Dual-In-Package (DIP). The pixel cell size is 18.45 × 21.8 μm and the core size of photodiode is 12.45 × 9.6 μm; the resulting fill factor is 29.7%.

Fiber-optic temperature sensor using a spectrum-modulating semiconductor etalon

NASA Technical Reports Server (NTRS)

Beheim, Glenn; Anthan, Donald J.; Beheim, Glenn; Anthan, Donald J.

1987-01-01

Described is a fiber-optic temperature sensor that uses a spectrum modulating SiC etalon. The spectral output of this type of sensor may be analyzed to obtain a temperature measurement which is largely independent of the transmission properties of the sensor's fiber-optic link. A highly precise laboratory spectrometer is described in detail, and this instrument is used to study the properties of this type of sensor. Also described are a number of different spectrum analyzers that are more suitable for use in a practical thermometer.

Piezotronic Effect: An Emerging Mechanism for Sensing Applications

PubMed Central

Jenkins, Kory; Nguyen, Vu; Zhu, Ren; Yang, Rusen

2015-01-01

Strain-induced polarization charges in a piezoelectric semiconductor effectively modulate the band structure near the interface and charge carrier transport. Fundamental investigation of the piezotronic effect has attracted broad interest, and various sensing applications have been demonstrated. This brief review discusses the fundamentals of the piezotronic effect, followed by a review highlighting important applications for strain sensors, pressure sensors, chemical sensors, photodetectors, humidity sensors and temperature sensors. Finally, the review offers some perspectives and outlook for this new field of multi-functional sensing enabled by the piezotronic effect. PMID:26378536

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2007-01-01

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Ultrafast transient grating radiation to optical image converter

DOEpatents

Stewart, Richard E; Vernon, Stephen P; Steel, Paul T; Lowry, Mark E

2014-11-04

A high sensitivity transient grating ultrafast radiation to optical image converter is based on a fixed transmission grating adjacent to a semiconductor substrate. X-rays or optical radiation passing through the fixed transmission grating is thereby modulated and produces a small periodic variation of refractive index or transient grating in the semiconductor through carrier induced refractive index shifts. An optical or infrared probe beam tuned just below the semiconductor band gap is reflected off a high reflectivity mirror on the semiconductor so that it double passes therethrough and interacts with the radiation induced phase grating therein. A small portion of the optical beam is diffracted out of the probe beam by the radiation induced transient grating to become the converted signal that is imaged onto a detector.

Reduced graphene oxide-ZnO composites based gas sensors: A review

NASA Astrophysics Data System (ADS)

Thakare, N. B.; Raghuwanshi, F. C.; Kalyamwar, V. S.; Tamgadge, Y. S.

2018-05-01

The need to monitor and control life threatening gases has led to research and development of a wide variety of sensors using different materials and technologies. Recently rGO (reduced graphene oxide)-MOS (Metal Oxide Semiconductor) architectures have been studied for efficient and cost effective gas sensors that will operate at low temperature. In this review paper, we review latest findings and progress in rGO-ZnO composites as sensors to detect volatile and toxic gases.

Spinoff 2010

NASA Technical Reports Server (NTRS)

2010-01-01

Topics covered include: Burnishing Techniques Strengthen Hip Implants; Signal Processing Methods Monitor Cranial Pressure; Ultraviolet-Blocking Lenses Protect, Enhance Vision; Hyperspectral Systems Increase Imaging Capabilities; Programs Model the Future of Air Traffic Management; Tail Rotor Airfoils Stabilize Helicopters, Reduce Noise; Personal Aircraft Point to the Future of Transportation; Ducted Fan Designs Lead to Potential New Vehicles; Winglets Save Billions of Dollars in Fuel Costs; Sensor Systems Collect Critical Aerodynamics Data; Coatings Extend Life of Engines and Infrastructure; Radiometers Optimize Local Weather Prediction; Energy-Efficient Systems Eliminate Icing Danger for UAVs; Rocket-Powered Parachutes Rescue Entire Planes; Technologies Advance UAVs for Science, Military; Inflatable Antennas Support Emergency Communication; Smart Sensors Assess Structural Health; Hand-Held Devices Detect Explosives and Chemical Agents; Terahertz Tools Advance Imaging for Security, Industry; LED Systems Target Plant Growth; Aerogels Insulate Against Extreme Temperatures; Image Sensors Enhance Camera Technologies; Lightweight Material Patches Allow for Quick Repairs; Nanomaterials Transform Hairstyling Tools; Do-It-Yourself Additives Recharge Auto Air Conditioning; Systems Analyze Water Quality in Real Time; Compact Radiometers Expand Climate Knowledge; Energy Servers Deliver Clean, Affordable Power; Solutions Remediate Contaminated Groundwater; Bacteria Provide Cleanup of Oil Spills, Wastewater; Reflective Coatings Protect People and Animals; Innovative Techniques Simplify Vibration Analysis; Modeling Tools Predict Flow in Fluid Dynamics; Verification Tools Secure Online Shopping, Banking; Toolsets Maintain Health of Complex Systems; Framework Resources Multiply Computing Power; Tools Automate Spacecraft Testing, Operation; GPS Software Packages Deliver Positioning Solutions; Solid-State Recorders Enhance Scientific Data Collection; Computer Models Simulate Fine Particle Dispersion; Composite Sandwich Technologies Lighten Components; Cameras Reveal Elements in the Short Wave Infrared; Deformable Mirrors Correct Optical Distortions; Stitching Techniques Advance Optics Manufacturing; Compact, Robust Chips Integrate Optical Functions; Fuel Cell Stations Automate Processes, Catalyst Testing; Onboard Systems Record Unique Videos of Space Missions; Space Research Results Purify Semiconductor Materials; and Toolkits Control Motion of Complex Robotics.

Microfabricated Chemical Sensors for Safety and Emission Control Applications

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Chen, L.-Y.; Knight, D.; Liu, C. C.; Wu, Q. H.

1998-01-01

Chemical sensor technology is being developed for leak detection, emission monitoring, and fire safety applications. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication (MicroElectroMechanical Systems (MEMS)-based) technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Using these technologies, sensors to measure hydrogen, hydrocarbons, nitrogen oxides, carbon monoxide, oxygen, and carbon dioxide are being developed. A description is given of each sensor type and its present stage of development. It is concluded that microfabricated sensor technology has significant potential for use in a range of aerospace applications.

Strategies for interfacing inorganic nanocrystals with biological systems based on polymer-coating.

PubMed

Palui, Goutam; Aldeek, Fadi; Wang, Wentao; Mattoussi, Hedi

2015-01-07

Interfacing inorganic nanoparticles and biological systems with the aim of developing novel imaging and sensing platforms has generated great interest and much activity. However, the effectiveness of this approach hinges on the ability of the surface ligands to promote water-dispersion of the nanoparticles with long term colloidal stability in buffer media. These surface ligands protect the nanostructures from the harsh biological environment, while allowing coupling to target molecules, which can be biological in nature (e.g., proteins and peptides) or exhibit specific photo-physical characteristics (e.g., a dye or a redox-active molecule). Amphiphilic block polymers have provided researchers with versatile molecular platforms with tunable size, composition and chemical properties. Hence, several groups have developed a wide range of polymers as ligands or micelle capsules to promote the transfer of a variety of inorganic nanomaterials to buffer media (including magnetic nanoparticles and semiconductor nanocrystals) and render them biocompatible. In this review, we first summarize the established synthetic routes to grow high quality nanocrystals of semiconductors, metals and metal oxides. We then provide a critical evaluation of the recent developments in the design, optimization and use of various amphiphilic copolymers to surface functionalize the above nanocrystals, along with the strategies used to conjugate them to target biomolecules. We finally conclude by providing a summary of the most promising applications of these polymer-coated inorganic platforms in sensor design, and imaging of cells and tissues.

Chip-scale sensor system integration for portable health monitoring.

PubMed

Jokerst, Nan M; Brooke, Martin A; Cho, Sang-Yeon; Shang, Allan B

2007-12-01

The revolution in integrated circuits over the past 50 yr has produced inexpensive computing and communications systems that are powerful and portable. The technologies for these integrated chip-scale sensing systems, which will be miniature, lightweight, and portable, are emerging with the integration of sensors with electronics, optical systems, micromachines, microfluidics, and the integration of chemical and biological materials (soft/wet material integration with traditional dry/hard semiconductor materials). Hence, we stand at a threshold for health monitoring technology that promises to provide wearable biochemical sensing systems that are comfortable, inauspicious, wireless, and battery-operated, yet that continuously monitor health status, and can transmit compressed data signals at regular intervals, or alarm conditions immediately. In this paper, we explore recent results in chip-scale sensor integration technology for health monitoring. The development of inexpensive chip-scale biochemical optical sensors, such as microresonators, that are customizable for high sensitivity coupled with rapid prototyping will be discussed. Ground-breaking work in the integration of chip-scale optical systems to support these optical sensors will be highlighted, and the development of inexpensive Si complementary metal-oxide semiconductor circuitry (which makes up the vast majority of computational systems today) for signal processing and wireless communication with local receivers that lie directly on the chip-scale sensor head itself will be examined.

Development of phonon-mediated transition-edge-sensor x-ray detectors for use in astronomy

NASA Astrophysics Data System (ADS)

Leman, Steven W.

Low temperature detectors have grown in popularity over the years for a variety of reasons. Reduced thermal noise and the associated reduction in statistical fluctuations improve signal to noise. Novel material properties at low temperature such as superconductivity can be exploited. And let us not forget easier access to cryogenic techniques, for example industry made and sold refrigerators eliminating the need for graduate students to make their own. In this thesis I discuss development of a novel phonon-mediated distributed transition-edge-sensor x-ray detector which would be useful for astrophysical studies such as magnetic recombination in the solar corona, the warm-hot intergalactic medium and surveys of clusters and groups of galaxies. The detector uses a large semiconductor absorber and Transition-Edge-Sensors (TESs) to readout the absorbed energy. Calorimetry is performed on individual photons and a partitioning of the energy between various TESs allows for position determination. Hence time varying astronomical sources can be spectroscopically studied and imaged. I will conclude with a discussion of the detector's performance and propose a next generation detector which could make significant improvements on the design discussed in this thesis.

Real-time look-up table-based color correction for still image stabilization of digital cameras without using frame memory

NASA Astrophysics Data System (ADS)

Luo, Lin-Bo; An, Sang-Woo; Wang, Chang-Shuai; Li, Ying-Chun; Chong, Jong-Wha

2012-09-01

Digital cameras usually decrease exposure time to capture motion-blur-free images. However, this operation will generate an under-exposed image with a low-budget complementary metal-oxide semiconductor image sensor (CIS). Conventional color correction algorithms can efficiently correct under-exposed images; however, they are generally not performed in real time and need at least one frame memory if they are implemented by hardware. The authors propose a real-time look-up table-based color correction method that corrects under-exposed images with hardware without using frame memory. The method utilizes histogram matching of two preview images, which are exposed for a long and short time, respectively, to construct an improved look-up table (ILUT) and then corrects the captured under-exposed image in real time. Because the ILUT is calculated in real time before processing the captured image, this method does not require frame memory to buffer image data, and therefore can greatly save the cost of CIS. This method not only supports single image capture, but also bracketing to capture three images at a time. The proposed method was implemented by hardware description language and verified by a field-programmable gate array with a 5 M CIS. Simulations show that the system can perform in real time with a low cost and can correct the color of under-exposed images well.

DFT study of adsorption behavior of NO, CO, NO2, and NH3 molecules on graphene-like BC3: A search for highly sensitive molecular sensor

NASA Astrophysics Data System (ADS)

Mehdi Aghaei, Sadegh; Monshi, M. M.; Torres, I.; Zeidi, S. M. J.; Calizo, I.

2018-01-01

The adsorption behaviors of toxic gas molecules (NO, CO, NO2, and NH3) on the graphene-like boron carbide (BC3) are investigated using first-principle density functional theory. The graphene-like BC3 monolayer is a semiconductor with a band gap of 0.733 eV. It is discovered that all the above gas molecules are chemisorbed on the BC3 sheet while they retain their molecular forms. It is also revealed that the NO2 gas molecule could be dissociated into NO and O species through the adsorption process. The amounts of charge transfer upon adsorption of CO and NH3 gas molecules on the BC3 are found to be small. The band gap changes in BC3 as a result of interactions with CO and NH3 are only 4.63% and 16.7%, indicating that the BC3-based sensor has a low and moderate sensitivity to CO and NH3, respectively. Contrariwise, upon adsorption of NO or NO2 on the BC3, significant charges are transferred from the molecules to the BC3 sheet, causing a semiconductor-metal and semiconductor-p type semiconductor transition. Our study suggests that the BC3-based sensor has a high potential for NO and NO2 detection due to the significant conductance changes, moderate adsorption energy, and short recovery time. More excitingly, the BC3 is a likely catalyst for dissociation of the NO2 gas molecule.

Label-free detection of biomolecules with Ta2O5-based field effect devices

NASA Astrophysics Data System (ADS)

Branquinho, Rita Maria Mourao Salazar

Field-effect-based devices (FEDs) are becoming a basic structural element in a new generation of micro biosensors. Their numerous advantages such as small size, labelfree response and versatility, together with the possibility of on-chip integration of biosensor arrays with a future prospect of low-cost mass production, make their development highly desirable. The present thesis focuses on the study and optimization of tantalum pentoxide (Ta2O5) deposited by rf magnetron sputtering at room temperature, and their application as sensitive layer in biosensors based on field effect devices (BioFEDs). As such, the influence of several deposition parameters and post-processing annealing temperature and surface plasma treatment on the film¡¦s properties was investigated. Electrolyte-insulator-semiconductor (EIS) field-effect-based sensors comprising the optimized Ta2O5 sensitive layer were applied to the development of BioFEDs. Enzyme functionalized sensors (EnFEDs) were produced for penicillin detection. These sensors were also applied to the label free detection of DNA and the monitoring of its amplification via polymerase chain reaction (PCR), real time PCR (RT-PCR) and loop mediated isothermal amplification (LAMP). Ion sensitive field effect transistors (ISFETs) based on semiconductor oxides comprising the optimized Ta2O5 sensitive layer were also fabricated. EIS sensors comprising Ta2O5 films produced with optimized conditions demonstrated near Nernstian pH sensitivity, 58+/-0.3 mV/pH. These sensors were successfully applied to the label-free detection of penicillin and DNA. Penicillinase functionalized sensors showed a 29+/-7 mV/mM sensitivity towards penicillin detection up to 4 mM penicillin concentration. DNA detection was achieved with 30 mV/mugM sensitivity and DNA amplification monitoring with these sensors showed comparable results to those obtained with standard fluorescence based methods. Semiconductor oxides-based ISFETs with Ta2O5 sensitive layer were also produced. Finally, the high quality and sensitivity demonstrated by Ta2O5 thin films produced at low temperature by rf magnetron sputtering allows for their application as sensitive layer in field effect sensors.

An Acoustic Charge Transport Imager for High Definition Television

NASA Technical Reports Server (NTRS)

Hunt, William D.; Brennan, Kevin; May, Gary; Glenn, William E.; Richardson, Mike; Solomon, Richard

1999-01-01

This project, over its term, included funding to a variety of companies and organizations. In addition to Georgia Tech these included Florida Atlantic University with Dr. William E. Glenn as the P.I., Kodak with Mr. Mike Richardson as the P.I. and M.I.T./Polaroid with Dr. Richard Solomon as the P.I. The focus of the work conducted by these organizations was the development of camera hardware for High Definition Television (HDTV). The focus of the research at Georgia Tech was the development of new semiconductor technology to achieve a next generation solid state imager chip that would operate at a high frame rate (I 70 frames per second), operate at low light levels (via the use of avalanche photodiodes as the detector element) and contain 2 million pixels. The actual cost required to create this new semiconductor technology was probably at least 5 or 6 times the investment made under this program and hence we fell short of achieving this rather grand goal. We did, however, produce a number of spin-off technologies as a result of our efforts. These include, among others, improved avalanche photodiode structures, significant advancement of the state of understanding of ZnO/GaAs structures and significant contributions to the analysis of general GaAs semiconductor devices and the design of Surface Acoustic Wave resonator filters for wireless communication. More of these will be described in the report. The work conducted at the partner sites resulted in the development of 4 prototype HDTV cameras. The HDTV camera developed by Kodak uses the Kodak KAI-2091M high- definition monochrome image sensor. This progressively-scanned charge-coupled device (CCD) can operate at video frame rates and has 9 gm square pixels. The photosensitive area has a 16:9 aspect ratio and is consistent with the "Common Image Format" (CIF). It features an active image area of 1928 horizontal by 1084 vertical pixels and has a 55% fill factor. The camera is designed to operate in continuous mode with an output data rate of 5MHz, which gives a maximum frame rate of 4 frames per second. The MIT/Polaroid group developed two cameras under this program. The cameras have effectively four times the current video spatial resolution and at 60 frames per second are double the normal video frame rate.

MIS-based sensors with hydrogen selectivity

DOEpatents

Li,; Dongmei, [Boulder, CO; Medlin, J William [Boulder, CO; McDaniel, Anthony H [Livermore, CA; Bastasz, Robert J [Livermore, CA

2008-03-11

The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.

JPL CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasherininov, P. G., E-mail: peter.kasherininov@mail.ioffe.ru; Tomasov, A. A.; Beregulin, E. V.

2011-01-15

Available published data on the properties of optical recording media based on semiconductor structures are reviewed. The principles of operation, structure, parameters, and the range of application for optical recording media based on MIS structures formed of photorefractive crystals with a thick layer of insulator and MIS structures with a liquid crystal as the insulator (the MIS LC modulators), as well as the effect of optical bistability in semiconductor structures (semiconductor MIS structures with nanodimensionally thin insulator (TI) layer, M(TI)S nanostructures). Special attention is paid to recording media based on the M(TI)S nanostructures promising for fast processing of highly informativemore » images and to fabrication of optoelectronic correlators of images for noncoherent light.« less

Cadmium Telluride Semiconductor Detector for Improved Spatial and Energy Resolution Radioisotopic Imaging

PubMed Central

Abbaspour, Samira; Mahmoudian, Babak; Islamian, Jalil Pirayesh

2017-01-01

The detector in single-photon emission computed tomography has played a key role in the quality of the images. Over the past few decades, developments in semiconductor detector technology provided an appropriate substitution for scintillation detectors in terms of high sensitivity, better energy resolution, and also high spatial resolution. One of the considered detectors is cadmium telluride (CdTe). The purpose of this paper is to review the CdTe semiconductor detector used in preclinical studies, small organ and small animal imaging, also research in nuclear medicine and other medical imaging modalities by a complete inspect on the material characteristics, irradiation principles, applications, and epitaxial growth method. PMID:28553175

A customized metal oxide semiconductor-based gas sensor array for onion quality evaluation: system development and characterization.

PubMed

Konduru, Tharun; Rains, Glen C; Li, Changying

2015-01-12

A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage.

A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

PubMed Central

Konduru, Tharun; Rains, Glen C.; Li, Changying

2015-01-01

A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS) sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone), acetonitrile (nitrile), ethyl acetate (ester), and ethanol (alcohol). The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm) of methlypropyl sulfide and two concentrations (145 and 1452 ppm) of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage. PMID:25587975

A Control System and Streaming DAQ Platform with Image-Based Trigger for X-ray Imaging

NASA Astrophysics Data System (ADS)

Stevanovic, Uros; Caselle, Michele; Cecilia, Angelica; Chilingaryan, Suren; Farago, Tomas; Gasilov, Sergey; Herth, Armin; Kopmann, Andreas; Vogelgesang, Matthias; Balzer, Matthias; Baumbach, Tilo; Weber, Marc

2015-06-01

High-speed X-ray imaging applications play a crucial role for non-destructive investigations of the dynamics in material science and biology. On-line data analysis is necessary for quality assurance and data-driven feedback, leading to a more efficient use of a beam time and increased data quality. In this article we present a smart camera platform with embedded Field Programmable Gate Array (FPGA) processing that is able to stream and process data continuously in real-time. The setup consists of a Complementary Metal-Oxide-Semiconductor (CMOS) sensor, an FPGA readout card, and a readout computer. It is seamlessly integrated in a new custom experiment control system called Concert that provides a more efficient way of operating a beamline by integrating device control, experiment process control, and data analysis. The potential of the embedded processing is demonstrated by implementing an image-based trigger. It records the temporal evolution of physical events with increased speed while maintaining the full field of view. The complete data acquisition system, with Concert and the smart camera platform was successfully integrated and used for fast X-ray imaging experiments at KIT's synchrotron radiation facility ANKA.

Portable lensless wide-field microscopy imaging platform based on digital inline holography and multi-frame pixel super-resolution

PubMed Central

Sobieranski, Antonio C; Inci, Fatih; Tekin, H Cumhur; Yuksekkaya, Mehmet; Comunello, Eros; Cobra, Daniel; von Wangenheim, Aldo; Demirci, Utkan

2017-01-01

In this paper, an irregular displacement-based lensless wide-field microscopy imaging platform is presented by combining digital in-line holography and computational pixel super-resolution using multi-frame processing. The samples are illuminated by a nearly coherent illumination system, where the hologram shadows are projected into a complementary metal-oxide semiconductor-based imaging sensor. To increase the resolution, a multi-frame pixel resolution approach is employed to produce a single holographic image from multiple frame observations of the scene, with small planar displacements. Displacements are resolved by a hybrid approach: (i) alignment of the LR images by a fast feature-based registration method, and (ii) fine adjustment of the sub-pixel information using a continuous optimization approach designed to find the global optimum solution. Numerical method for phase-retrieval is applied to decode the signal and reconstruct the morphological details of the analyzed sample. The presented approach was evaluated with various biological samples including sperm and platelets, whose dimensions are in the order of a few microns. The obtained results demonstrate a spatial resolution of 1.55 µm on a field-of-view of ≈30 mm2. PMID:29657866

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Kevin L.

The purpose of this LDRD project was to demonstrate high spatial and temporal resolution x-ray imaging using optical detectors, and in particular the VISAR and OHRV diagnostics on the OMEGA laser. The x-ray source being imaged was a backlighter capsule being imploded by 39 beams of the OMEGA laser. In particular this approach utilized a semiconductor with the side facing the backlighter capsule coated with a thin aluminum layer to allow x rays to pass through the metal layer and then get absorbed in the semiconductor. The other side of the semiconductor was AR coated to allow the VISAR ormore » OHRV probe beam to sample the phase change of the semiconductor as the x rays were absorbed in the semiconductor. This technique is capable of acquiring sub-picosecond 2-D or 1-D x-ray images, detector spatial resolution of better than 10 um and the ability to operate in a high neutron flux environment expected on ignition shots with burning plasmas. In addition to demonstrating this technique on the OMEGA laser, several designs were made to improve the phase sensitivity, temporal resolution and number of frames over the existing diagnostics currently implemented on the OMEGA laser. These designs included both 2-d imaging diagnostics as well as improved 1-D imaging diagnostics which were streaked in time.« less

A Novel Defect Inspection Method for Semiconductor Wafer Based on Magneto-Optic Imaging

NASA Astrophysics Data System (ADS)

Pan, Z.; Chen, L.; Li, W.; Zhang, G.; Wu, P.

2013-03-01

The defects of semiconductor wafer may be generated from the manufacturing processes. A novel defect inspection method of semiconductor wafer is presented in this paper. The method is based on magneto-optic imaging, which involves inducing eddy current into the wafer under test, and detecting the magnetic flux associated with eddy current distribution in the wafer by exploiting the Faraday rotation effect. The magneto-optic image being generated may contain some noises that degrade the overall image quality, therefore, in this paper, in order to remove the unwanted noise present in the magneto-optic image, the image enhancement approach using multi-scale wavelet is presented, and the image segmentation approach based on the integration of watershed algorithm and clustering strategy is given. The experimental results show that many types of defects in wafer such as hole and scratch etc. can be detected by the method proposed in this paper.

Review of Portable and Low-Cost Sensors for the Ambient Air Monitoring of Benzene and Other Volatile Organic Compounds

PubMed Central

Kok, Gertjan; Persijn, Stefan; Sauerwald, Tilman

2017-01-01

This article presents a literature review of sensors for the monitoring of benzene in ambient air and other volatile organic compounds. Combined with information provided by stakeholders, manufacturers and literature, the review considers commercially available sensors, including PID-based sensors, semiconductor (resistive gas sensors) and portable on-line measuring devices as for example sensor arrays. The bibliographic collection includes the following topics: sensor description, field of application at fixed sites, indoor and ambient air monitoring, range of concentration levels and limit of detection in air, model descriptions of the phenomena involved in the sensor detection process, gaseous interference selectivity of sensors in complex VOC matrix, validation data in lab experiments and under field conditions. PMID:28657595

Review of Portable and Low-Cost Sensors for the Ambient Air Monitoring of Benzene and Other Volatile Organic Compounds.

PubMed

Spinelle, Laurent; Gerboles, Michel; Kok, Gertjan; Persijn, Stefan; Sauerwald, Tilman

2017-06-28

This article presents a literature review of sensors for the monitoring of benzene in ambient air and other volatile organic compounds. Combined with information provided by stakeholders, manufacturers and literature, the review considers commercially available sensors, including PID-based sensors, semiconductor (resistive gas sensors) and portable on-line measuring devices as for example sensor arrays. The bibliographic collection includes the following topics: sensor description, field of application at fixed sites, indoor and ambient air monitoring, range of concentration levels and limit of detection in air, model descriptions of the phenomena involved in the sensor detection process, gaseous interference selectivity of sensors in complex VOC matrix, validation data in lab experiments and under field conditions.

Digital Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors.

PubMed

Tremblay, Noah J; Jung, Byung Jun; Breysse, Patrick; Katz, Howard E

2011-11-22

Chemiresistors and sensitive OFETs have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Here we report higher order logic circuits utilizing OFETs sensitive to amine vapors. The circuits depend on the synergistic responses of paired p- and n-channel organic semiconductors, including an unprecedented analyte-induced current increase by the n-channel semiconductor. This represents the first step towards 'intelligent sensors' that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Piezoelectric micromachined ultrasonic transducers for fingerprint sensing

NASA Astrophysics Data System (ADS)

Lu, Yipeng

Fingerprint identification is the most prevalent biometric technology due to its uniqueness, universality and convenience. Over the past two decades, a variety of physical mechanisms have been exploited to capture an electronic image of a human fingerprint. Among these, capacitive fingerprint sensors are the ones most widely used in consumer electronics because they are fabricated using conventional complementary metal oxide semiconductor (CMOS) integrated circuit technology. However, capacitive fingerprint sensors are extremely sensitive to finger contamination and moisture. This thesis will introduce an ultrasonic fingerprint sensor using a PMUT array, which offers a potential solution to this problem. In addition, it has the potential to increase security, as it allows images to be collected at various depths beneath the epidermis, providing images of the sub-surface dermis layer and blood vessels. Firstly, PMUT sensitivity is maximized by optimizing the layer stack and electrode design, and the coupling coefficient is doubled via series transduction. Moreover, a broadband PMUT with 97% fractional bandwidth is achieved by utilizing a thinner structure excited at two adjacent mechanical vibration modes with overlapping bandwidth. In addition, we proposed waveguide PMUTs, which function to direct acoustic waves, confine acoustic energy, and provide mechanical protection for the PMUT array. Furthermore, PMUT arrays were fabricated with different processes to form the membrane, including front-side etching with a patterned sacrificial layer, front-side etching with additional anchor, cavity SOI wafers and eutectic bonding. Additionally, eutectic bonding allows the PMUT to be integrated with CMOS circuits. PMUTs were characterized in the mechanical, electrical and acoustic domains. Using transmit beamforming, a narrow acoustic beam was achieved, and high-resolution (sub-100 microm) and short-range (~1 mm) pulse-echo ultrasonic imaging was demonstrated using a steel phantom. Finally, a novel ultrasonic fingerprint sensor was demonstrated using a 24x8 array of 22 MHz PMUTs with 100 microm pitch, fully integrated with 180 nm CMOS circuitry through eutectic wafer bonding. Each PMUT is directly bonded to a dedicated CMOS receive amplifier, minimizing electrical parasitics and eliminating the need for through-silicon vias. Pulse-echo imaging of a 1D steel grating is demonstrated using electronic scanning of a 20x8 sub-array, resulting in 300 mV maximum received amplitude and 5:1 contrast ratio. Because the small size of this array limits the maximum image size, mechanical scanning was used to image a 2D PDMS fingerprint phantom (10 mm by 8 mm) at a 1.2 mm distance from the array.

Metal oxide gas sensors on the nanoscale

NASA Astrophysics Data System (ADS)

Plecenik, A.; Haidry, A. A.; Plecenik, T.; Durina, P.; Truchly, M.; Mosko, M.; Grancic, B.; Gregor, M.; Roch, T.; Satrapinskyy, L.; Moskova, A.; Mikula, M.; Kus, P.

2014-06-01

Low cost, low power and highly sensitive gas sensors operating at room temperature are very important devices for controlled hydrogen gas production and storage. One of the disadvantages of chemosensors is their high operating temperature (usually 200 - 400 °C), which excludes such type of sensors from usage in explosive environment. In this report, a new concept of gas chemosensors operating at room temperature based on TiO2 thin films is discussed. Integration of such sensor is fully compatible with sub-100 nm semiconductor technology and could be transferred directly from labor to commercial sphere.

Advanced Photonic Sensors Enabled by Semiconductor Bonding

DTIC Science & Technology

2010-05-31

a dry scroll backing pump to maintain the high differential pressure between the UV gun and the sample/analysis chamber. We also replaced the...semiconductor materials in an ultra-high vacuum (UHV) environment where the properties of the interface can be controlled with atomic-level precision. Such...year research program, we designed and constructed a unique system capable of fusion bonding two wafers in an ultra-high vacuum environment. This system

Quantum Dots Based Rad-Hard Computing and Sensors

NASA Technical Reports Server (NTRS)

Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.

2001-01-01

Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.

Proton Nonionizing Energy Loss (NIEL) for Device Applications

NASA Technical Reports Server (NTRS)

Jun, Insoo; Xapsos, Michael A.; Messenger, Scott R.; Burke, Edward A.; Walters, Robert J.; Summers, Geoff; Jordan, Thomas

2003-01-01

Nonionizing energy loss (NIEL) is a quantity that describes the rate of energy loss due to atomic displacements as a particle traverses a material. The product of the NIEL and the particle fluence (time integrated flux) gives the displacement damage energy deposition per unit mass of material. NIEL plays the same role to the displacement damage energy deposition as the stopping power to the total ionizing dose (TID). The concept of NIEL has been very useful for correlating particle induced displacement damage effects in semiconductor and optical devices. Many studies have successfully demonstrated that the degradation of semiconductor devices or optical sensors in a radiation field can be linearly correlated to the displacement damage energy, and subsequently to the NIEL deposited in the semiconductor devices or optical sensors. In addition, the NIEL concept was also useful in the study of both Si and GaAs solar cells and of high temperature superconductors, and at predicting the survivability of detectors used at the LHC at CERN. On the other hand, there are some instances where discrepancies are observed in the application of NIEL, most notably in GaAs semiconductor devices. However, NIEL is still a valuable tool, and can be used to scale damages produced by different particles and in different environments, even though this is not understood at the microscopic level.

Nanosized TiO[subscript 2] for Photocatalytic Water Splitting Studied by Oxygen Sensor and Data Logger

ERIC Educational Resources Information Center

Zhang, Ruinan; Liu, Song; Yuan, Hongyan; Xiao, Dan; Choi, Martin M. F.

2012-01-01

Photocatalytic water splitting by semiconductor photocatalysts has attracted considerable attention in the past few decades. In this experiment, nanosized titanium dioxide (nano-TiO[subscript 2]) particles are used to photocatalytically split water, which is then monitored by an oxygen sensor. Sacrificial reagents such as organics (EDTA) and metal…

Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

PubMed

Jang, Jun Tae; Park, Jozeph; Ahn, Byung Du; Kim, Dong Myong; Choi, Sung-Jin; Kim, Hyun-Suk; Kim, Dae Hwan

2015-07-22

Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.

Evaluation of humidity sensing properties of TMBHPET thin film embedded with spinel cobalt ferrite nanoparticles

NASA Astrophysics Data System (ADS)

Zafar, Qayyum; Azmer, Mohamad Izzat; Al-Sehemi, Abdullah G.; Al-Assiri, Mohammad S.; Kalam, Abul; Sulaiman, Khaulah

2016-07-01

In this study, we report the enhanced sensing parameters of previously reported TMBHPET-based humidity sensor. Significant improved sensing performance has been demonstrated by coupling of TMBHPET moisture sensing thin film with cobalt ferrite nanoparticles (synthesized by eco-benign ultrasonic method). The mean size of CoFe2O4 nanoparticles has been estimated to be 6.5 nm. It is assumed that the thin film of organic-ceramic hybrid matrix (TMBHPET:CoFe2O4) is a potential candidate for humidity sensing utility by virtue of its high specific surface area and porous surface morphology (as evident from TEM, FESEM, and AFM images). The hybrid suspension has been drop-cast onto the glass substrate with preliminary deposited coplanar aluminum electrodes separated by 40 µm distance. The influence of humidity on the capacitance of the hybrid humidity sensor (Al/TMBHPET:CoFe2O4/Al) has been investigated at three different frequencies of the AC applied voltage ( V rms 1 V): 100 Hz, 1 kHz, and 10 kHz. It has been observed that at 100 Hz, under a humidity of 99 % RH, the capacitance of the sensor increased by 2.61 times, with respect to 30 % RH condition. The proposed sensor exhibits significantly improved sensitivity 560 fF/ % RH at 100 Hz, which is nearly 7.5 times as high as that of pristine TMBHPET-based humidity sensor. Further, the capacitive sensor exhibits improved dynamic range (30-99 % RH), small hysteresis ( 2.3 %), and relatively quicker response and recovery times ( 12 s, 14 s, respectively). It is assumed that the humidity response of the sensor is associated with the diffusion kinetics of water vapors and doping of the semiconductor nanocomposite by water molecules.

Gating capacitive field-effect sensors by the charge of nanoparticle/molecule hybrids.

PubMed

Poghossian, Arshak; Bäcker, Matthias; Mayer, Dirk; Schöning, Michael J

2015-01-21

The semiconductor field-effect platform is a powerful tool for chemical and biological sensing with direct electrical readout. In this work, the field-effect capacitive electrolyte-insulator-semiconductor (EIS) structure - the simplest field-effect (bio-)chemical sensor - modified with citrate-capped gold nanoparticles (AuNPs) has been applied for a label-free electrostatic detection of charged molecules by their intrinsic molecular charge. The EIS sensor detects the charge changes in AuNP/molecule inorganic/organic hybrids induced by the molecular adsorption or binding events. The feasibility of the proposed detection scheme has been exemplarily demonstrated by realizing capacitive EIS sensors consisting of an Al-p-Si-SiO2-silane-AuNP structure for the label-free detection of positively charged cytochrome c and poly-d-lysine molecules as well as for monitoring the layer-by-layer formation of polyelectrolyte multilayers of poly(allylamine hydrochloride)/poly(sodium 4-styrene sulfonate), representing typical model examples of detecting small proteins and macromolecules and the consecutive adsorption of positively/negatively charged polyelectrolytes, respectively. For comparison, EIS sensors without AuNPs have been investigated, too. The adsorption of molecules on the surface of AuNPs has been verified via the X-ray photoelectron spectroscopy method. In addition, a theoretical model of the functioning of the capacitive field-effect EIS sensor functionalized with AuNP/charged-molecule hybrids has been discussed.

Multicapillary Gas Chromatography-Temperature Modulated Metal Oxide Semiconductor Sensors Array Detector for Monitoring of Volatile Organic Compounds in Closed Atmosphere Using Gaussian Apodization Factor Analysis.

PubMed

Alinoori, Amir Hossein; Masoum, Saeed

2018-05-22

A unique metal oxide semiconductor sensor (MOS) array detector with eight sensors was designed and fabricated in a PTFE chamber as an interface for coupling with multicapillary gas chromatography. This design consists of eight transfer lines with equal length between the multicapillary columns (MCC) and sensors. The deactivated capillary columns were passed through each transfer line and homemade flow splitter to distribute the same gas flow on each sensor. Using the eight ports flow splitter design helps us to equal the length of carrier gas path and flow for each sensor, minimizing the dead volume of the sensor's chamber and increasing chromatographic resolution. In addition to coupling of MCC to MOS array detector and other considerations in hardware design, modulation of MOS temperature was used to increase sensitivity and selectivity, and data analysis was enhanced with adapted Gaussian apodization factor analysis (GAFA) as a multivariate curve resolution algorithm. Continues air sampling and injecting system (CASI) design provides a fast and easily applied method for continues injection of air sample with no additional sample preparation. The analysis cycle time required for each run is less than 300 s. The high sample load and sharp injection with the fast separation by MCC decrease the peak widths and improve detection limits. This homemade customized instrument is an alternative to other time-consuming and expensive technologies for continuous monitoring of outgassing in air samples.

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

PubMed Central

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-01-01

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively. PMID:27792131

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose.

PubMed

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-10-25

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal-oxide-semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm². The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

Fabrication of Smart Chemical Sensors Based on Transition-Doped-Semiconductor Nanostructure Materials with µ-Chips

PubMed Central

Rahman, Mohammed M.; Khan, Sher Bahadar; Asiri, Abdullah M.

2014-01-01

Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm2) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r2 = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm−2mM−1 and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I–V sensors on μ-chips. PMID:24454785

Fabrication of smart chemical sensors based on transition-doped-semiconductor nanostructure materials with µ-chips.

PubMed

Rahman, Mohammed M; Khan, Sher Bahadar; Asiri, Abdullah M

2014-01-01

Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm(2)) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r(2) = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm(-2)mM(-1) and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I-V sensors on μ-chips.

Novel Dry-Type Glucose Sensor Based on a Metal-Oxide-Semiconductor Capacitor Structure with Horseradish Peroxidase + Glucose Oxidase Catalyzing Layer

NASA Astrophysics Data System (ADS)

Lin, Jing-Jenn; Wu, You-Lin; Hsu, Po-Yen

2007-10-01

In this paper, we present a novel dry-type glucose sensor based on a metal-oxide-semiconductor capacitor (MOSC) structure using SiO2 as a gate dielectric in conjunction with a horseradish peroxidase (HRP) + glucose oxidase (GOD) catalyzing layer. The tested glucose solution was dropped directly onto the window opened on the SiO2 layer, with a coating of HRP + GOD catalyzing layer on top of the gate dielectric. From the capacitance-voltage (C-V) characteristics of the sensor, we found that the glucose solution can induce an inversion layer on the silicon surface causing a gate leakage current flowing along the SiO2 surface. The gate current changes Δ I before and after the drop of glucose solution exhibits a near-linear relationship with increasing glucose concentration. The Δ I sensitivity is about 1.76 nA cm-2 M-1, and the current is quite stable 20 min after the drop of the glucose solution is tested.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

PubMed

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Comparative assessment of erbium fiber ring lasers and reflective SOA linear lasers for fiber Bragg grating dynamic strain sensing.

PubMed

Wei, Heming; Krishnaswamy, Sridhar

2017-05-01

Fiber Bragg grating (FBG) dynamic strain sensors using both an erbium-based fiber ring laser configuration and a reflective semiconductor optical amplifier (RSOA)-based linear laser configuration are investigated theoretically and experimentally. Fiber laser models are first presented to analyze the output characteristics of both fiber laser configurations when the FBG sensor is subjected to dynamic strains at high frequencies. Due to differences in the transition times of erbium and the semiconductor (InP/InGaAsP), erbium-doped fiber amplifier (EDFA)- and RSOA-based fiber lasers exhibit different responses and regimes of stability when the FBG is subjected to dynamic strains. The responses of both systems are experimentally verified using an adaptive photorefractive two-wave mixing (TWM) spectral demodulation technique. The experimental results show that the RSOA-FBG fiber linear cavity laser is stable and can stably respond to dynamic strains at high frequencies. An example application using a multiplexed TWM interferometer to demodulate multiple FBG sensors is also discussed.

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

PubMed Central

Chen, Min-Cheng; Chen, Hao-Yu; Lin, Chia-Yi; Chien, Chao-Hsin; Hsieh, Tsung-Fan; Horng, Jim-Tong; Qiu, Jian-Tai; Huang, Chien-Chao; Ho, Chia-Hua; Yang, Fu-Liang

2012-01-01

This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording. PMID:22666012

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

PubMed Central

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-01-01

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

Chemical Gas Sensors for Aeronautic and Space Applications 2

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Chen, Liong-Yu; Neudeck, Phil G.; Knight, Dale; Liu, C. C.; Wu, Q. H.; Zhou, H. J.; Makel, Darby; Liu, M.; Rauch, W. A.

1998-01-01

Aeronautic and space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Areas of interest include launch vehicle safety monitoring, emission monitoring, and fire detection. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensors is based on progress in two types of technology: 1) Micromachining and microfabrication technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Sensor development for each application involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this microfabricated gas sensor technology make this area of sensor development a field of significant interest.

Chemical Gas Sensors for Aeronautics and Space Applications III

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Chen, L. Y.; Liu, C. C.; Wu, Q. H.; Sawayda, M. S.; Jin, Z.; Hammond, J.; Makel, D.; Liu, M.;

Chemical Gas Sensors for Aeronautic and Space Applications 2

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Chen, L. Y.; Neudeck, P. G.; Knight, D.; Liu, C. C.; Wu, Q. H.; Zhou, H. J.; Makel, D.; Liu, M.; Rauch, W. A.

1998-01-01

Aeronautic and Space applications require the development of chemical sensors with capabilities beyond those of commercially available sensors. Areas of most interest include launch vehicle safety monitoring emission monitoring and fire detection. This paper discusses the needs of aeronautic and space applications and the point-contact sensor technology being developed to address these needs. The development of these sensor is based on progress two types of technology: 1) Micro-machining and micro-fabrication technology to fabricate miniaturized sensors. 2) The development of high temperature semiconductors, especially silicon carbide. Sensor development for each application involves its own challenges in the fields of materials science and fabrication technology. The number of dual-use commercial applications of this micro-fabricated gas sensor technology make this area of sensor development a field of significant interest.

Homogeneity study of a GaAs:Cr pixelated sensor by means of X-rays

NASA Astrophysics Data System (ADS)

Billoud, T.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospisil, S.; Roux, J. S.

2018-04-01

Direct conversion semiconductor detectors have become an indispensable tool in radiation detection by now. In order to obtain a high detection efficiency, especially when detecting X or γ rays, high-Z semiconductor sensors are necessary. Like other compound semiconductors GaAs, compensated by chromium (GaAs:Cr), suffers from a number of defects that affect the charge collection efficiency and homogeneity of the material. A precise knowledge of this problem is important to predict the performance of such detectors and eventually correct their response in specific applications. In this study we analyse the homogeneity and mobility-lifetime products (μe τe) of a 500 μ m thick GaAs:Cr pixelated sensor connected to a Timepix chip. The detector is irradiated by 23 keV X-rays, each pixel recording the number of photon interactions and the charge they induce on its electrode. The μe τe products are extracted on a per-pixel basis, using the Hecht equation corrected for the small pixel effect. The detector shows a good time stability in the experimental conditions. Significant inhomogeneities are observed in photon counting and charge collection efficiencies. An average μe τe of 1.0 ṡ 10‑4 cm2V‑1 is found, and compared with values obtained by other methods for the same material. Solutions to improve the response are discussed.

A Review on Surface Stress-Based Miniaturized Piezoresistive SU-8 Polymeric Cantilever Sensors

NASA Astrophysics Data System (ADS)

Mathew, Ribu; Ravi Sankar, A.

2018-06-01

In the last decade, microelectromechanical systems (MEMS) SU-8 polymeric cantilevers with piezoresistive readout combined with the advances in molecular recognition techniques have found versatile applications, especially in the field of chemical and biological sensing. Compared to conventional solid-state semiconductor-based piezoresistive cantilever sensors, SU-8 polymeric cantilevers have advantages in terms of better sensitivity along with reduced material and fabrication cost. In recent times, numerous researchers have investigated their potential as a sensing platform due to high performance-to-cost ratio of SU-8 polymer-based cantilever sensors. In this article, we critically review the design, fabrication, and performance aspects of surface stress-based piezoresistive SU-8 polymeric cantilever sensors. The evolution of surface stress-based piezoresistive cantilever sensors from solid-state semiconductor materials to polymers, especially SU-8 polymer, is discussed in detail. Theoretical principles of surface stress generation and their application in cantilever sensing technology are also devised. Variants of SU-8 polymeric cantilevers with different composition of materials in cantilever stacks are explained. Furthermore, the interdependence of the material selection, geometrical design parameters, and fabrication process of piezoresistive SU-8 polymeric cantilever sensors and their cumulative impact on the sensor response are also explained in detail. In addition to the design-, fabrication-, and performance-related factors, this article also describes various challenges in engineering SU-8 polymeric cantilevers as a universal sensing platform such as temperature and moisture vulnerability. This review article would serve as a guideline for researchers to understand specifics and functionality of surface stress-based piezoresistive SU-8 cantilever sensors.[Figure not available: see fulltext.

Tunable semiconductor laser at 1025-1095 nm range for OCT applications with an extended imaging depth

NASA Astrophysics Data System (ADS)

Shramenko, Mikhail V.; Chamorovskiy, Alexander; Lyu, Hong-Chou; Lobintsov, Andrei A.; Karnowski, Karol; Yakubovich, Sergei D.; Wojtkowski, Maciej

2015-03-01

Tunable semiconductor laser for 1025-1095 nm spectral range is developed based on the InGaAs semiconductor optical amplifier and a narrow band-pass acousto-optic tunable filter in a fiber ring cavity. Mode-hop-free sweeping with tuning speeds of up to 104 nm/s was demonstrated. Instantaneous linewidth is in the range of 0.06-0.15 nm, side-mode suppression is up to 50 dB and polarization extinction ratio exceeds 18 dB. Optical power in output single mode fiber reaches 20 mW. The laser was used in OCT system for imaging a contact lens immersed in a 0.5% intra-lipid solution. The cross-section image provided the imaging depth of more than 5mm.

A novel optical detector concept for dedicated and multi-modality in vivo small animal imaging

NASA Astrophysics Data System (ADS)

Peter, Jörg; Schulz, Ralf B.; Unholtz, Daniel; Semmler, Wolfhard

2007-07-01

An optical detector suitable for inclusion in tomographic arrangements for non-contact in vivo bioluminescence and fluorescence imaging applications is proposed. It consists of a microlens array (MLA) intended for field-of-view definition, a large-field complementary metal-oxide-semiconductor (CMOS) chip for light detection, a septum mask for cross-talk suppression, and an exchangeable filter to block excitation light. Prototype detector units with sensitive areas of 2.5 cm x 5 cm each were assembled. The CMOS sensor constitutes a 512 x 1024 photodiode matrix at 48 μm pixel pitch. Refractive MLAs with plano-convex lenses of 480 μm in diameter and pitch were selected resulting in a 55 x 105 lens matrix. The CMOS sensor is aligned on the focal plane of the MLA at 2.15mm distance. To separate individual microlens images an opaque multi-bore septum mask of 2.1mm in thickness and bore diameters of 400 μm at 480 μm pitch, aligned with the lens pattern, is placed between MLA and CMOS. Intrinsic spatial detector resolution and sensitivity was evaluated experimentally as a function of detector-object distance. Due to its small overall dimensions such detectors can be favorably packed for tomographic imaging (optical diffusion tomography, ODT) yielding complete 2 π field-of-view coverage. We also present a design study of a device intended to simultaneously image positron labeled substrates (positron emission tomography, PET) and optical molecular probes in small animals such as mice and rats. It consists of a cylindrical allocation of optical detector units which form an inner detector ring while PET detector blocks are mounted in radial extension, those gaining complementary information in a single, intrinsically coregistered experimental data acquisition study. Finally, in a second design study we propose a method for integrated optical and magnetic resonance imaging (MRI) which yields in vivo functional/molecular information that is intrinsically registered with the anatomy of the image object.

Feasibility of employing a smartphone as the payload in a photogrammetric UAV system

NASA Astrophysics Data System (ADS)

Kim, Jinsoo; Lee, Seongkyu; Ahn, Hoyong; Seo, Dongju; Park, Soyoung; Choi, Chuluong

2013-05-01

Smartphones can be operated in a 3G network environment at any time or location, and they also cost less than existing photogrammetric UAV systems, providing high-resolution images and 3D location and attitude data from a variety of built-in sensors. This study aims to assess the feasibility of using a smartphone as the payload for a photogrammetric UAV system. To carry out the assessment, a smartphone-based photogrammetric UAV system was developed and utilized to obtain image, location, and attitude data under both static and dynamic conditions. The accuracy of the location and attitude data obtained and sent by this system was then evaluated. The smartphone images were converted into ortho-images via image triangulation, which was carried out both with and without consideration of the interior orientation (IO) parameters determined by camera calibration. In the static experiment, when the IO parameters were taken into account, the triangulation results were less than 1.28 pixels (RMSE) for all smartphone types, an improvement of at least 47% compared with the case when IO parameters were not taken into account. In the dynamic experiment, on the other hand, the accuracy of smartphone image triangulation was not significantly improved by considering IO parameters. This was because the electronic rolling shutter within the complementary metal-oxide semiconductor (CMOS) sensor built into the smartphone and the actuator for the voice coil motor (VCM)-type auto-focusing affected by the vibration and the speed of the UAV, which is likely to have a negative effect on image-based digital elevation model (DEM) generation. However, considering that these results were obtained using a single smartphone, this suggests that a smartphone is not only feasible as the payload for a photogrammetric UAV system but it may also play a useful role when installed in existing UAV systems.

Optical sensor array platform based on polymer electronic devices

NASA Astrophysics Data System (ADS)

Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

2007-10-01

Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

NASA Tech Briefs, September 2000. Volume 24, No. 9

NASA Technical Reports Server (NTRS)

2000-01-01

Topics include: Sensors; Test and Measurement; Electronic Components and Circuits; Electronic Systems; Physical Sciences; Materials; Computer Programs; Mechanics; Machinery/Automation; Bio-Medical; semiconductors/ICs; Books and Reports.

Ultrahigh refractive index chalcogenide based copolymers for infrared optics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Anderson, Laura E.; Namnabat, Soha; Char, Kookheon; Glass, Richard; Norwood, Robert A.; Pyun, Jeffrey

2016-09-01

Current trends in technology development demand increased miniaturization and higher level integration of electronic and photonic components. Such needs arise in emerging imaging systems, optoelectronic devices, optical interconnects and photonic integrated circuits. Compact, integrated photonics requires high refractive index materials, which primarily comprise crystalline and amorphous semiconductors, as well as chalcogenide glasses, which can possess refractive indices higher than 4 and good infrared transparency. There is currently no high refractive index (n 2 or above) that has the low cost production and ease of processing available in optical polymers. Such polymers would potentially cover applications that are not convenient or possible with crystalline and vitreous semiconductors. Examples of such applications include micro lens arrays for image sensors, optical adhesives for bonding and antireflection coatings, and high contrast optical waveguides. While much of the focus has been in the telecommunications transparency regions, significant new opportunities exist for a polymer which is capable of transmitting efficiently in the MWIR region. While there are polymers that have been synthesized with refractive indices as high as 1.75, these polymers are generally conjugated and incorporate heteroatoms such as sulfur or metals, and generally have complex and expensive syntheses. Here we report on new chalcogenide based copolymers with very high refractive index (n 2) that also have good optical transmission properties in the near-, short- and mid-wave infrared up to 5µm. These polymers are rich in sulfur, have low hydrogen content and were made using inverse vulcanization.

Preface of 16th International conference on Defects, Recognition, Imaging and Physics in Semiconductors

NASA Astrophysics Data System (ADS)

Yang, Deren; Xu, Ke

2016-11-01

The 16th International conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XVI) was held at the Worldhotel Grand Dushulake in Suzhou, China from 6th to 10th September 2015, around the 30th anniversary of the first DRIP conference. It was hosted by the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences. On this occasion, about one hundred participants from nineteen countries attended the event. And a wide range of subjects were addressed during the conference: physics of point and extended defects in semiconductors: origin, electrical, optical and magnetic properties of defects; diagnostics techniques of crystal growth and processing of semiconductor materials (in-situ and process control); device imaging and mapping to evaluate performance and reliability; defect analysis in degraded optoelectronic and electronic devices; imaging techniques and instruments (proximity probe, x-ray, electron beam, non-contact electrical, optical and thermal imaging techniques, etc.); new frontiers of atomic-scale-defect assessment (STM, AFM, SNOM, ballistic electron energy microscopy, TEM, etc.); new approaches for multi-physic-parameter characterization with Nano-scale space resolution. Within these subjects, there were 58 talks, of which 18 invited, and 50 posters.

Microfabricated electrochemical sensors for combustion applications

NASA Astrophysics Data System (ADS)

Vulcano Rossi, Vitor A.; Mullen, Max R.; Karker, Nicholas A.; Zhao, Zhouying; Kowarz, Marek W.; Dutta, Prabir K.; Carpenter, Michael A.

2015-05-01

A new design for the miniaturization of an existing oxygen sensor is proposed based on the application of silicon microfabrication technologies to a cm sized O2 sensor demonstrated by Argonne National Laboratory and The Ohio State University which seals a metal/metal oxide within the structure to provide an integrated oxygen reference. The structural and processing changes suggested will result in a novel MEMS-based device meeting the semiconductor industry standards for cost efficiency and mass production. The MEMS design requires thin film depositions to create a YSZ membrane, palladium oxide reference and platinum electrodes. Pt electrodes are studied under operational conditions ensuring film conductivity over prolonged usage. SEM imaging confirms void formation after extended tests, consistent with the literature. Furthermore, hydrophilic bonding of pairs of silicon die samples containing the YSZ membrane and palladium oxide is discussed in order to create hermetic sealed cavities for oxygen reference. The introduction of tensile Si3N4 films to the backside of the silicon die generates bowing of the chips, compromising bond quality. This effect is controlled through the application of pressure during the initial bonding stages. In addition, KOH etching of the bonded die samples is discussed, and a YSZ membrane that survives the etching step is characterized by Raman spectroscopy.

Lensless imaging for wide field of view

NASA Astrophysics Data System (ADS)

Nagahara, Hajime; Yagi, Yasushi

2015-02-01

It is desirable to engineer a small camera with a wide field of view (FOV) because of current developments in the field of wearable cameras and computing products, such as action cameras and Google Glass. However, typical approaches for achieving wide FOV, such as attaching a fisheye lens and convex mirrors, require a trade-off between optics size and the FOV. We propose camera optics that achieve a wide FOV, and are at the same time small and lightweight. The proposed optics are a completely lensless and catoptric design. They contain four mirrors, two for wide viewing, and two for focusing the image on the camera sensor. The proposed optics are simple and can be simply miniaturized, since we use only mirrors for the proposed optics and the optics are not susceptible to chromatic aberration. We have implemented the prototype optics of our lensless concept. We have attached the optics to commercial charge-coupled device/complementary metal oxide semiconductor cameras and conducted experiments to evaluate the feasibility of our proposed optics.

Development and applications of 3-dimensional integration nanotechnologies.

PubMed

Kim, Areum; Choi, Eunmi; Son, Hyungbin; Pyo, Sung Gyu

2014-02-01

Unlike conventional two-dimensional (2D) planar structures, signal or power is supplied through through-silicon via (TSV) in three-dimensional (3D) integration technology to replace wires for binding the chip/wafer. TSVs have becomes an essential technology, as they satisfy Moore's law. This 3D integration technology enables system and sensor functions at a nanoscale via the implementation of a highly integrated nano-semiconductor as well as the fabrication of a single chip with multiple functions. Thus, this technology is considered to be a new area of development for the systemization of the nano-bio area. In this review paper, the basic technology required for such 3D integration is described and methods to measure the bonding strength in order to measure the void occurring during bonding are introduced. Currently, CMOS image sensors and memory chips associated with nanotechnology are being realized on the basis of 3D integration technology. In this paper, we intend to describe the applications of high-performance nano-biosensor technology currently under development and the direction of development of a high performance lab-on-a-chip (LOC).

Cellular nonlinear networks for strike-point localization at JET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arena, P.; Fortuna, L.; Bruno, M.

2005-11-15

At JET, the potential of fast image processing for real-time purposes is thoroughly investigated. Particular attention is devoted to smart sensors based on system on chip technology. The data of the infrared cameras were processed with a chip implementing a cellular nonlinear network (CNN) structure so as to support and complement the magnetic diagnostics in the real-time localization of the strike-point position in the divertor. The circuit consists of two layers of complementary metal-oxide semiconductor components, the first being the sensor and the second implementing the actual CNN. This innovative hardware has made it possible to determine the position ofmore » the maximum thermal load with a time resolution of the order of 30 ms. Good congruency has been found with the measurement from the thermocouples in the divertor, proving the potential of the infrared data in locating the region of the maximum thermal load. The results are also confirmed by JET magnetic codes, both those used for the equilibrium reconstructions and those devoted to the identification of the plasma boundary.« less

Synthesis and Characterization of Titanium Dioxide Thin Film for Sensor Applications

NASA Astrophysics Data System (ADS)

Latha, H. K. E.; Lalithamba, H. S.

2018-03-01

Titanium oxide (TiO2) nanoparticles (metal oxide semiconductor) are successfully synthesized using hydrothermal method for sensor application. Titanium dioxide and Sodium hydroxide are used as precursors. These reactants are mixed and calcinated at 400 °C to produce TiO2 nanoparticles. The crystalline structure, morphology of synthesized TiO2 nanoparticles are studied using x-ray diffraction (XRD), Fourier Transform Infrared (FTIR) analysis and scanning electron microscopy (SEM). XRD results revealed that the prepared TiO2 sample is highly crystalline, having Anatase crystal structure. FT-IR spectra peak at 475 cm‑1 indicated characteristic absorption bands of TiO2 nanoparticles. The XRD and FTIR result confirmed the formation of high purity of TiO2 nanoparticles. The SEM image shows that TiO2 nanoparticles prepared in this study are spherical in shape. Synthesized TiO2 nanoparticles are deposited on glass substrate at room temperature using E beam evaporation method to determine gauge factor and found to be 4.7. The deposited TiO2 thin films offer tremendous potential in the applications of electronic and magneto–electric devices.

Recent Vertical External Cavity Surface Emitting Lasers (VECSELs) Developments for Sensor Applications (POSTPRINT)

DTIC Science & Technology

2013-02-01

edge-emitting strained InxGa1−xSb/AlyGa1−ySb quantum well struc- tures using solid-source molecular beam epitaxy (MBE) with varying barrier heights...intersubband quantum wells. The most common high-power edge-emitting semiconductor lasers suffter from poor beam quality, due primarily to the linewidth...reduces the power scalability of semiconductor lasers. In vertical cavity surface emitting lasers ( VCSELs ), light propagates parallel to the growth

Direct imaging detectors for electron microscopy

NASA Astrophysics Data System (ADS)

Faruqi, A. R.; McMullan, G.

2018-01-01

Electronic detectors used for imaging in electron microscopy are reviewed in this paper. Much of the detector technology is based on the developments in microelectronics, which have allowed the design of direct detectors with fine pixels, fast readout and which are sufficiently radiation hard for practical use. Detectors included in this review are hybrid pixel detectors, monolithic active pixel sensors based on CMOS technology and pnCCDs, which share one important feature: they are all direct imaging detectors, relying on directly converting energy in a semiconductor. Traditional methods of recording images in the electron microscope such as film and CCDs, are mentioned briefly along with a more detailed description of direct electronic detectors. Many applications benefit from the use of direct electron detectors and a few examples are mentioned in the text. In recent years one of the most dramatic advances in structural biology has been in the deployment of the new backthinned CMOS direct detectors to attain near-atomic resolution molecular structures with electron cryo-microscopy (cryo-EM). The development of direct detectors, along with a number of other parallel advances, has seen a very significant amount of new information being recorded in the images, which was not previously possible-and this forms the main emphasis of the review.

The hard x-ray imager onboard IXO

NASA Astrophysics Data System (ADS)

Nakazawa, Kazuhiro; Takahashi, Tadayuki; Limousin, Olivier; Kokubun, Motohide; Watanabe, Shin; Laurent, Philippe; Arnaud, Monique; Tajima, Hiroyasu

2010-07-01

The Hard X-ray Imager (HXI) is one of the instruments onboard International X-ray Observatory (IXO), to be launched into orbit in 2020s. It covers the energy band of 10-40 keV, providing imaging-spectroscopy with a field of view of 8 x 8 arcmin2. The HXI is attached beneath the Wide Field Imager (WFI) covering 0.1-15 keV. Combined with the super-mirror coating on the mirror assembly, this configuration provides observation of X-ray source in wide energy band (0.1-40.0 keV) simultaneously, which is especially important for varying sources. The HXI sensor part consists of the semiconductor imaging spectrometer, using Si in the medium energy detector and CdTe in the high energy detector as its material, and an active shield covering its back to reduce background in orbit. The HXI technology is based on those of the Japanese-lead new generation X-ray observatory ASTRO-H, and partly from those developed for Simbol-X. Therefore, the technological development is in good progress. In the IXO mission, HXI will provide a major assets to identify the nature of the object by penetrating into thick absorbing materials and determined the inherent spectral shape in the energy band well above the structure around Fe-K lines and edges.

Semiconductor quantum dots as Förster resonance energy transfer donors for intracellularly-based biosensors

NASA Astrophysics Data System (ADS)

Field, Lauren D.; Walper, Scott A.; Susumu, Kimihiro; Oh, Eunkeu; Medintz, Igor L.; Delehanty, James B.

2017-02-01

Förster resonance energy transfer (FRET)-based assemblies currently comprise a significant portion of intracellularly based sensors. Although extremely useful, the fluorescent protein pairs typically utilized in such sensors are still plagued by many photophysical issues including significant direct acceptor excitation, small changes in FRET efficiency, and limited photostability. Luminescent semiconductor nanocrystals or quantum dots (QDs) are characterized by many unique optical properties including size-tunable photoluminescence, broad excitation profiles coupled to narrow emission profiles, and resistance to photobleaching, which can cumulatively overcome many of the issues associated with use of fluorescent protein FRET donors. Utilizing QDs for intracellular FRET-based sensing still requires significant development in many areas including materials optimization, bioconjugation, cellular delivery and assay design and implementation. We are currently developing several QD-based FRET sensors for various intracellular applications. These include sensors targeting intracellular proteolytic activity along with those based on theranostic nanodevices for monitoring drug release. The protease sensor is based on a unique design where an intracellularly expressed fluorescent acceptor protein substrate assembles onto a QD donor following microinjection, forming an active complex that can be monitored in live cells over time. In the theranostic configuration, the QD is conjugated to a carrier protein-drug analogue complex to visualize real-time intracellular release of the drug from its carrier in response to an external stimulus. The focus of this talk will be on the design, properties, photophysical characterization and cellular application of these sensor constructs.

All-optical liquid crystal spatial light modulators

NASA Astrophysics Data System (ADS)

Tabiryan, Nelson; Grozhik, Vladimir; Khoo, Iam Choon; Nersisyan, Sarik R.; Serak, Svetlana

2003-12-01

Nonlinear optical processes in liquid crystals (LC) can be used for construction of all-optical spatial light modulators (SLM) where the photosensitivity and phase modulating functions are integrated into a single layer of an LC-material. Such spatial light integrated modulators (SLIMs) cost only a fraction of the conventional LC-SLM and can be used with high power laser radiation due to high transparency of LC materials and absence of light absorbing electrodes on the substrates of the LC-cell constituting the SLIM. Recent development of LC materials the photosensitivity of which is comparable to that of semiconductors has led to using SLIM in schemes of optical anti-jamming, sensor protection, and image processing. All-optical processes add remarkable versatility to the operation of SLIM harnessing the wealth inherent to light-matter interaction phenomena.

Germanium Requirements for National Defense,

DTIC Science & Technology

1991-07-01

work in this area involves development of hard exterior coating materials that will protect Ge windows but not adversely affect their optical...advanced electronic materials, is used in semiconductor devices, fiber optic systems, and infrared sensors for ships, aircraft, missiles, tanks and anti -tank...infrared sensors for ships, aircraft, missiles, tanks and anti -tank units. Because of its importance in these applications, germanium was added to the

Method and apparatus for real-time measurement of fuel gas compositions and heating values

DOEpatents

Zelepouga, Serguei; Pratapas, John M.; Saveliev, Alexei V.; Jangale, Vilas V.

2016-03-22

An exemplary embodiment can be an apparatus for real-time, in situ measurement of gas compositions and heating values. The apparatus includes a near infrared sensor for measuring concentrations of hydrocarbons and carbon dioxide, a mid infrared sensor for measuring concentrations of carbon monoxide and a semiconductor based sensor for measuring concentrations of hydrogen gas. A data processor having a computer program for reducing the effects of cross-sensitivities of the sensors to components other than target components of the sensors is also included. Also provided are corresponding or associated methods for real-time, in situ determination of a composition and heating value of a fuel gas.

Meat Quality Assessment by Electronic Nose (Machine Olfaction Technology)

PubMed Central

Ghasemi-Varnamkhasti, Mahdi; Mohtasebi, Seyed Saeid; Siadat, Maryam; Balasubramanian, Sundar

2009-01-01

Over the last twenty years, newly developed chemical sensor systems (so called “electronic noses”) have made odor analyses possible. These systems involve various types of electronic chemical gas sensors with partial specificity, as well as suitable statistical methods enabling the recognition of complex odors. As commercial instruments have become available, a substantial increase in research into the application of electronic noses in the evaluation of volatile compounds in food, cosmetic and other items of everyday life is observed. At present, the commercial gas sensor technologies comprise metal oxide semiconductors, metal oxide semiconductor field effect transistors, organic conducting polymers, and piezoelectric crystal sensors. Further sensors based on fibreoptic, electrochemical and bi-metal principles are still in the developmental stage. Statistical analysis techniques range from simple graphical evaluation to multivariate analysis such as artificial neural network and radial basis function. The introduction of electronic noses into the area of food is envisaged for quality control, process monitoring, freshness evaluation, shelf-life investigation and authenticity assessment. Considerable work has already been carried out on meat, grains, coffee, mushrooms, cheese, sugar, fish, beer and other beverages, as well as on the odor quality evaluation of food packaging material. This paper describes the applications of these systems for meat quality assessment, where fast detection methods are essential for appropriate product management. The results suggest the possibility of using this new technology in meat handling. PMID:22454572

Methods for determining optical power, for power-normalizing laser measurements, and for stabilizing power of lasers via compliance voltage sensing

DOEpatents

Taubman, Matthew S; Phillips, Mark C

2015-04-07

A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

Polarographic carbon dioxide transducer amplifier

NASA Technical Reports Server (NTRS)

Stillman, G.

1971-01-01

Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability. Thermistor in feedback loop provides temperature compensation for large drifts in the sensor.

Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors

NASA Astrophysics Data System (ADS)

Augel, L.; Fischer, I. A.; Dunbar, L. A.; Bechler, S.; Berrier, A.; Etezadi, D.; Hornung, F.; Kostecki, K.; Ozdemir, C. I.; Soler, M.; Altug, H.; Schulze, J.

2016-03-01

Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible to Si-based complementary metal oxide semiconductor (CMOS) technology that can be combined with integrated circuitry for continuous monitoring of biosamples and fast sensor data processing. Such an integrated biosensor could be realized by structuring a nanohole array in the contact metal layer of a photodetector. We used Fouriertransform infrared spectroscopy to investigate nanohole arrays in a 100 nm Al film deposited on top of a vertical Si-Ge photodiode structure grown by molecular beam epitaxy (MBE). We find that the presence of a protein bilayer, constitute of protein AG and Immunoglobulin G (IgG), leads to a wavelength-dependent absorptance enhancement of ~ 8 %.

Silicon carbide, an emerging high temperature semiconductor

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.; Powell, J. Anthony

1991-01-01

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Ratiometric, filter-free optical sensor based on a complementary metal oxide semiconductor buried double junction photodiode.

PubMed

Yung, Ka Yi; Zhan, Zhiyong; Titus, Albert H; Baker, Gary A; Bright, Frank V

2015-07-16

We report a complementary metal oxide semiconductor integrated circuit (CMOS IC) with a buried double junction (BDJ) photodiode that (i) provides a real-time output signal that is related to the intensity ratio at two emission wavelengths and (ii) simultaneously eliminates the need for an optical filter to block Rayleigh scatter. We demonstrate the BDJ platform performance for gaseous NH3 and aqueous pH detection. We also compare the BDJ performance to parallel results obtained by using a slew scanned fluorimeter (SSF). The BDJ results are functionally equivalent to the SSF results without the need for any wavelength filtering or monochromators and the BDJ platform is not prone to errors associated with source intensity fluctuations or sensor signal drift. Copyright © 2015 Elsevier B.V. All rights reserved.

Mass sensing AlN sensors for waste water monitoring

NASA Astrophysics Data System (ADS)

Porrazzo, R.; Potter, G.; Lydecker, L.; Foraida, Z.; Gattu, S.; Tokranova, N.; Castracane, J.

2014-08-01

Monitoring the presence of nanomaterials in waste water from semiconductor facilities is a critical task for public health organizations. Advanced semiconductor technology allows the fabrication of sensitive piezoelectric-based mass sensors with a detection limit of less than 1.35 ng/cm2 of nanomaterials such as nanoparticles of alumina, amorphous silica, ceria, etc. The interactions between acoustic waves generated by the piezoelectric sensor and nanomaterial mass attached to its surface define the sensing response as a shift in the resonant frequency. In this article the development and characterization of a prototype AlN film bulk acoustic resonator (FBAR) are presented. DC reactive magnetron sputtering was used to create tilted c-axis oriented AlN films to generate shear waves which don't propagate in liquids thus minimizing the acoustic losses. The high acoustic velocity of AlN over quartz allows an increase in resonance frequency in comparison with a quartz crystal microbalance (QCM) and results in a higher frequency shift per mass change, and thus greater sensitivity. The membrane and electrodes were fabricated using state of the art semiconductor technology. The device surface functionalization was performed to demonstrate selectivity towards a specific nanomaterial. As a result, the devices were covered with a "docking" layer that allows the nanomaterials to be selectively attached to the surface. This was achieved using covalent modification of the surface, specifically targeting ZnO nanoparticles. Our functionalization approach was tested using two different types of nanoparticles, and binding specificity was confirmed with various analytical techniques.

Microradiography with Semiconductor Pixel Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jakubek, Jan; Cejnarova, Andrea; Dammer, Jiri

High resolution radiography (with X-rays, neutrons, heavy charged particles, ...) often exploited also in tomographic mode to provide 3D images stands as a powerful imaging technique for instant and nondestructive visualization of fine internal structure of objects. Novel types of semiconductor single particle counting pixel detectors offer many advantages for radiation imaging: high detection efficiency, energy discrimination or direct energy measurement, noiseless digital integration (counting), high frame rate and virtually unlimited dynamic range. This article shows the application and potential of pixel detectors (such as Medipix2 or TimePix) in different fields of radiation imaging.

Coherent diffractive imaging methods for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

2017-12-01

The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

Segmented AC-coupled readout from continuous collection electrodes in semiconductor sensors

DOEpatents

Sadrozinski, Hartmut F. W.; Seiden, Abraham; Cartiglia, Nicolo

2017-04-04

Position sensitive radiation detection is provided using a continuous electrode in a semiconductor radiation detector, as opposed to the conventional use of a segmented electrode. Time constants relating to AC coupling between the continuous electrode and segmented contacts to the electrode are selected to provide position resolution from the resulting configurations. The resulting detectors advantageously have a more uniform electric field than conventional detectors having segmented electrodes, and are expected to have much lower cost of production and of integration with readout electronics.

THz semiconductor-based front-end receiver technology for space applications

NASA Technical Reports Server (NTRS)

Mehdi, Imran; Siegel, Peter

2004-01-01

Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

Process Dependence of H Passivation and Doping in H-implanted ZnO

DTIC Science & Technology

2013-01-04

Columbus, OH 43210, USA 2 Semiconductor Research Center, Wright State University, Dayton, OH 45432, USA 3 Sensors Directorate, Air Force Research...electrical properties. (Some figures may appear in colour only in the online journal) 1. Introduction The wide band gap semiconductor ZnO (Eg ≈ 3.4 eV) is a...theoretical studies predicted that H is likely to passivate zinc vacancy (VZn) and substitutional lithium on zinc site (LiZn) defects by forming neutral XZn–H

Development of Sic Gas Sensor Systems

NASA Technical Reports Server (NTRS)

Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

2002-01-01

Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

TH-A-17A-01: Innovation in PET Instrumentation and Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Casey, M; Miyaoka, R; Shao, Y

Innovation in PET instrumentation has led to the new millennium revolutionary imaging applications for diagnosis, therapeutic guidance, and development of new molecular imaging probes, etc. However, after several decades innovations, will the advances of PET technology and applications continue with the same trend and pace? What will be the next big thing beyond the PET/CT, PET/MRI, and Time-of-flight PET? How will the PET instrumentation and imaging performance be further improved by novel detector research and advanced imaging system development? Or will the development of new algorithms and methodologies extend the limit of current instrumentation and leapfrog the imaging quality andmore » quantification for practical applications? The objective of this session is to present an overview of current status and advances in the PET instrumentation and applications with speakers from leading academic institutes and a major medical imaging company. Presenting with both academic research projects and commercial technology developments, this session will provide a glimpse of some latest advances and challenges in the field, such as using semiconductor photon-sensor based PET detectors to improve performance and enable new applications, as well as the technology trend that may lead to the next breakthrough in PET imaging for clinical and preclinical applications. Both imaging and image-guided therapy subjects will be discussed. Learning Objectives: Describe the latest innovations in PET instrumentation and applications Understand the driven force behind the PET instrumentation innovation and development Learn the trend of PET technology development for applications.« less

Multi-immunosensors based on electrolite-insulator-semiconductor structures for determination of some herbicides

NASA Astrophysics Data System (ADS)

Starodub, Nickolaj F.; Starodub, Valentyna M.; Krivenchuk, Vladimir E.; Shapovalenko, Valentyna F.

2002-02-01

New type of the multi-immune sensor was elaborated. It is based on electrolyte-insulator-semiconductors structures and intended for determination of such herbicides as simazine, atrazine and 2,4-D. The specific antibodies were immobilized on nitrocellulose disks, which were placed in measuring cells. The analysis was fulfilled by sequential saturation of antibodies, left unbound after their exposure to native herbicide in investigated sample, with labelled herbicide. If horse radish peroxidase (HRP) was used as label the sensitivity of this multi-immune sensor was about 5 and 1.25 (mu) g/L for simazine and 2,4-D, respectively. At the changing of HRP by (beta) -glucose oxidase the sensitivity of analysis of these herbicides increased approximately in 5 times. The linear plots of the registered concentrations were in the range of 1,0-150,0 and 0,25-150,0 ng/mL for simazine and 2,4-D respectively. It was recommended to use the developed immune sensor for wide screening of herbicides in environment. The ways for increasing of its sensitivity were proposed.

Development of nanosensors in nuclear technology

NASA Astrophysics Data System (ADS)

Hassan, Thamir A. A.

2017-01-01

Selectivity, sensitivity, and stability (three S parameters) are developed as a new range of sensor this provided instruments for harsh, radioactive waste polluted environment monitoring. Isotope effect is very effective for nuclear radiation sensors preparation.in this presentation are reviewed of the development of Nanosensors in nuclear technology, such as high temperature boron and its compounds with suitable physical and chemical features as sensitive element for temperature and nuclear sensor, Boron isotopes based semiconductor nanosensors and studies of the mechanism of the removal uranium from radioactive wastewater with graphene oxide (GO).

Reflection technique for thermal mapping of semiconductors

DOEpatents

Walter, Martin J.

1989-06-20

Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

Early Stages of Interface Formation at Compound Semiconductor Surfaces Studied by Scanning Tunneling Microscopy

DTIC Science & Technology

1991-10-01

classical image potential in an ideal creasing gap separation, that is specific to the form of the metal- insulator -semiconductor (MIS) junction...with which one can precisely adjust s, and hence continuously vary the vacvuum barrier, is a potentially valuable tool for investigating this effect- By... insulator -semiconductor (MIS) junction similar to that shown in Fig. I diverge at the semiconductor-vacuum and vacuum-metal interfaces [7,81. These

Activity Monitors Help Users Get Optimum Sun Exposure

NASA Technical Reports Server (NTRS)

2015-01-01

Goddard scientist Shahid Aslam was investigating alternative methods for measuring extreme ultraviolet radiation on the Solar Dynamics Observatory when he hit upon semiconductors that measured wavelengths pertinent to human health. As a result, he and a partner established College Park, Maryland-based Sensor Sensor LLC and developed UVA+B SunFriend, a wrist monitor that lets people know when they've received their optimal amounts of sunlight for the day.

Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

PubMed

Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

2015-04-08

Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

High Temperature Electronics for Intelligent Harsh Environment Sensors

NASA Technical Reports Server (NTRS)

Evans, Laura J.

2008-01-01

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Carbon Monoxide Monitor for Automobile Passenger Compartment

DOT National Transportation Integrated Search

1991-07-01

This document reports the results of the study conducted by the Carnegie Mellon Research Institute (CMRI) to evaluate its recently developed metal oxide semiconductor (MOS) gas sensor technology for applications in the automobile environment. The spe...

Fabrication and performance of pressure-sensing device consisting of electret film and organic semiconductor

NASA Astrophysics Data System (ADS)

Kodzasa, Takehito; Nobeshima, Daiki; Kuribara, Kazunori; Uemura, Sei; Yoshida, Manabu

2017-04-01

We propose a new concept of a pressure-sensitive device that consists of an organic electret film and an organic semiconductor. This device exhibits high sensitivity and selectivity against various types of pressure. The sensing mechanism of this device originates from a modulation of the electric conductivity of the organic semiconductor film induced by the interaction between the semiconductor film and the charged electret film placed face to face. It is expected that a complicated sensor array will be fabricated by using a roll-to-roll manufacturing system, because this device can be prepared by an all-printing and simple lamination process without high-level positional adjustment for printing processes. This also shows that this device with a simple structure is suitable for application to a highly flexible device array sheet for an Internet of Things (IoT) or wearable sensing system.

GMAG Dissertation Award: Tunnel spin injectors for semiconductor spintronics

NASA Astrophysics Data System (ADS)

Jiang, Xin

2004-03-01

Spin-based electronics aims to develop novel sensor, memory and logic devices by manipulating the spin states of carriers in semiconducting materials. This talk will focus on electrical spin injection into semiconductors, which is a prerequisite for spintronics and, in particular, on tunnel based spin injectors that are potentially operable above room temperature. The magneto-transport properties of two families of tunnel spin injectors will be discussed. The spin polarization of the electron current within the semiconductor is detected by measuring the circular polarization of the electroluminescence (EL) from a quantum well light emitting diode structure. The temperature and bias dependence of the EL polarization provides insight into the mechanism of spin relaxation within the semiconductor heterostructure. Collaborators: Roger Wang^1,2, Sebastiaan van Dijken^1,*, Robert Shelby^1, Roger Macfarlane^1, Seth Bank^2, Glenn Solomon^2, James Harris^2, and Stuart S. P. Parkin^1 * Currently at Trinity College, Dublin, Ireland

Deep-Sea Video Cameras Without Pressure Housings

NASA Technical Reports Server (NTRS)

Cunningham, Thomas

2004-01-01

Underwater video cameras of a proposed type (and, optionally, their light sources) would not be housed in pressure vessels. Conventional underwater cameras and their light sources are housed in pods that keep the contents dry and maintain interior pressures of about 1 atmosphere (.0.1 MPa). Pods strong enough to withstand the pressures at great ocean depths are bulky, heavy, and expensive. Elimination of the pods would make it possible to build camera/light-source units that would be significantly smaller, lighter, and less expensive. The depth ratings of the proposed camera/light source units would be essentially unlimited because the strengths of their housings would no longer be an issue. A camera according to the proposal would contain an active-pixel image sensor and readout circuits, all in the form of a single silicon-based complementary metal oxide/semiconductor (CMOS) integrated- circuit chip. As long as none of the circuitry and none of the electrical leads were exposed to seawater, which is electrically conductive, silicon integrated- circuit chips could withstand the hydrostatic pressure of even the deepest ocean. The pressure would change the semiconductor band gap by only a slight amount . not enough to degrade imaging performance significantly. Electrical contact with seawater would be prevented by potting the integrated-circuit chip in a transparent plastic case. The electrical leads for supplying power to the chip and extracting the video signal would also be potted, though not necessarily in the same transparent plastic. The hydrostatic pressure would tend to compress the plastic case and the chip equally on all sides; there would be no need for great strength because there would be no need to hold back high pressure on one side against low pressure on the other side. A light source suitable for use with the camera could consist of light-emitting diodes (LEDs). Like integrated- circuit chips, LEDs can withstand very large hydrostatic pressures. If power-supply regulators or filter capacitors were needed, these could be attached in chip form directly onto the back of, and potted with, the imager chip. Because CMOS imagers dissipate little power, the potting would not result in overheating. To minimize the cost of the camera, a fixed lens could be fabricated as part of the plastic case. For improved optical performance at greater cost, an adjustable glass achromatic lens would be mounted in a reservoir that would be filled with transparent oil and subject to the full hydrostatic pressure, and the reservoir would be mounted on the case to position the lens in front of the image sensor. The lens would by adjusted for focus by use of a motor inside the reservoir (oil-filled motors already exist).

Integrated polarization-dependent sensor for autonomous navigation

NASA Astrophysics Data System (ADS)

Liu, Ze; Zhang, Ran; Wang, Zhiwen; Guan, Le; Li, Bin; Chu, Jinkui

2015-01-01

Based on the navigation strategy of insects utilizing the polarized skylight, an integrated polarization-dependent sensor for autonomous navigation is presented. The navigation sensor has the features of compact structure, high precision, strong robustness, and a simple manufacture technique. The sensor is composed by integrating a complementary-metal-oxide-semiconductor sensor with a multiorientation nanowire grid polarizer. By nanoimprint lithography, the multiorientation nanowire polarizer is fabricated in one step and the alignment error is eliminated. The statistical theory is added to the interval-division algorithm to calculate the polarization angle of the incident light. The laboratory and outdoor tests for the navigation sensor are implemented and the errors of the measured angle are ±0.02 deg and ±1.3 deg, respectively. The results show that the proposed sensor has potential for application in autonomous navigation.

Intelligent Network-Centric Sensors Development Program

DTIC Science & Technology

2012-07-31

Image sensor Configuration: ; Cone 360 degree LWIR PFx Sensor: •■. Image sensor . Configuration: Image MWIR Configuration; Cone 360 degree... LWIR PFx Sensor: Video Configuration: Cone 360 degree SW1R, 2. Reasoning Process to Match Sensor Systems to Algorithms The ontological...effects of coherent imaging because of aberrations. Another reason is the specular nature of active imaging. Both contribute to the nonuniformity

Sol-gel zinc oxide humidity sensors integrated with a ring oscillator circuit on-a-chip.

PubMed

Yang, Ming-Zhi; Dai, Ching-Liang; Wu, Chyan-Chyi

2014-10-28

The study develops an integrated humidity microsensor fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated humidity sensor consists of a humidity sensor and a ring oscillator circuit on-a-chip. The humidity sensor is composed of a sensitive film and branch interdigitated electrodes. The sensitive film is zinc oxide prepared by sol-gel method. After completion of the CMOS process, the sensor requires a post-process to remove the sacrificial oxide layer and to coat the zinc oxide film on the interdigitated electrodes. The capacitance of the sensor changes when the sensitive film adsorbs water vapor. The circuit is used to convert the capacitance of the humidity sensor into the oscillation frequency output. Experimental results show that the output frequency of the sensor changes from 84.3 to 73.4 MHz at 30 °C as the humidity increases 40 to 90%RH.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

NASA Technical Reports Server (NTRS)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Nanophotonic Image Sensors

PubMed Central

Hu, Xin; Wen, Long; Yu, Yan; Cumming, David R. S.

2016-01-01

The increasing miniaturization and resolution of image sensors bring challenges to conventional optical elements such as spectral filters and polarizers, the properties of which are determined mainly by the materials used, including dye polymers. Recent developments in spectral filtering and optical manipulating techniques based on nanophotonics have opened up the possibility of an alternative method to control light spectrally and spatially. By integrating these technologies into image sensors, it will become possible to achieve high compactness, improved process compatibility, robust stability and tunable functionality. In this Review, recent representative achievements on nanophotonic image sensors are presented and analyzed including image sensors with nanophotonic color filters and polarizers, metamaterial‐based THz image sensors, filter‐free nanowire image sensors and nanostructured‐based multispectral image sensors. This novel combination of cutting edge photonics research and well‐developed commercial products may not only lead to an important application of nanophotonics but also offer great potential for next generation image sensors beyond Moore's Law expectations. PMID:27239941

High Temperature, Wireless Seismometer Sensor for Venus

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Scardelletti, Maximilian C.; Taylor, Brandt; Beard, Steve; Meredith, Roger D.; Beheim, Glenn M.; Hunter Gary W.; Kiefer, Walter S.

2012-01-01

Space agency mission plans state the need to measure the seismic activity on Venus. Because of the high temperature on Venus (462? C average surface temperature) and the difficulty in placing and wiring multiple sensors using robots, a high temperature, wireless sensor using a wide bandgap semiconductor is an attractive option. This paper presents the description and proof of concept measurements of a high temperature, wireless seismometer sensor for Venus. A variation in inductance of a coil caused by the movement of an aluminum probe held in the coil and attached to a balanced leaf-spring seismometer causes a variation of 700 Hz in the transmitted signal from the oscillator/sensor system at 426? C. This result indicates that the concept may be used on Venus.

An Integrated-Circuit Temperature Sensor for Calorimetry and Differential Temperature Measurement

NASA Astrophysics Data System (ADS)

Muyskens, Mark

1997-07-01

Our application of an integrated-circuit (IC) temperature sensor which is easy-to-use, inexpensive, rugged, easily computer-interfacable and has good precision is described. The design, based on the National Semiconductor LM35 IC chip, avoids some of the difficulties associated with conventional sensors (thermocouples, thermistors, and platinum resistance thermometers) and a previously described IC sensor. The sensor can be used with a variety of data-acquisition systems. Applications range from general chemistry to physical chemistry, particularly where computer interfaced, digital temperature measurement is desired. Included is a detailed description of our current design with suggestions for improvement and a performance evaluation of the precision in differential measurement and the time constant for responding to temperature change.

Predictive simulations and optimization of nanowire field-effect PSA sensors including screening

NASA Astrophysics Data System (ADS)

Baumgartner, Stefan; Heitzinger, Clemens; Vacic, Aleksandar; Reed, Mark A.

2013-06-01

We apply our self-consistent PDE model for the electrical response of field-effect sensors to the 3D simulation of nanowire PSA (prostate-specific antigen) sensors. The charge concentration in the biofunctionalized boundary layer at the semiconductor-electrolyte interface is calculated using the propka algorithm, and the screening of the biomolecules by the free ions in the liquid is modeled by a sensitivity factor. This comprehensive approach yields excellent agreement with experimental current-voltage characteristics without any fitting parameters. Having verified the numerical model in this manner, we study the sensitivity of nanowire PSA sensors by changing device parameters, making it possible to optimize the devices and revealing the attributes of the optimal field-effect sensor.

Semiconductor@metal-organic framework core-shell heterostructures: a case of ZnO@ZIF-8 nanorods with selective photoelectrochemical response.

PubMed

Zhan, Wen-wen; Kuang, Qin; Zhou, Jian-zhang; Kong, Xiang-jian; Xie, Zhao-xiong; Zheng, Lan-sun

2013-02-06

Metal-organic frameworks (MOFs) and related material classes are attracting considerable attention for their applications in gas storage/separation as well as catalysis. In contrast, research concerning potential uses in electronic devices (such as sensors) is in its infancy, which might be due to a great challenge in the fabrication of MOFs and semiconductor composites with well-designed structures. In this paper, we proposed a simple self-template strategy to fabricate metal oxide semiconductor@MOF core-shell heterostructures, and successfully obtained freestanding ZnO@ZIF-8 nanorods as well as vertically standing arrays (including nanorod arrays and nanotube arrays). In this synthetic process, ZnO nanorods not only act as the template but also provide Zn(2+) ions for the formation of ZIF-8. In addition, we have demonstrated that solvent composition and reaction temperature are two crucial factors for successfully fabricating well-defined ZnO@ZIF-8 heterostructures. As we expect, the as-prepared ZnO@ZIF-8 nanorod arrays display distinct photoelectrochemical response to hole scavengers with different molecule sizes (e.g., H(2)O(2) and ascorbic acid) owing to the limitation of the aperture of the ZIF-8 shell. Excitingly, such ZnO@ZIF-8 nanorod arrays were successfully applied to the detection of H(2)O(2) in the presence of serous buffer solution. Therefore, it is reasonable to believe that the semiconductor@MOFs heterostructure potentially has promising applications in many electronic devices including sensors.

Solid-state image sensor with focal-plane digital photon-counting pixel array

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

1995-01-01

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Demonstration of in-vivo Multi-Probe Tracker Based on a Si/CdTe Semiconductor Compton Camera

NASA Astrophysics Data System (ADS)

Takeda, Shin'ichiro; Odaka, Hirokazu; Ishikawa, Shin-nosuke; Watanabe, Shin; Aono, Hiroyuki; Takahashi, Tadayuki; Kanayama, Yousuke; Hiromura, Makoto; Enomoto, Shuichi

2012-02-01

By using a prototype Compton camera consisting of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors, originally developed for the ASTRO-H satellite mission, an experiment involving imaging multiple radiopharmaceuticals injected into a living mouse was conducted to study its feasibility for medical imaging. The accumulation of both iodinated (131I) methylnorcholestenol and 85Sr into the mouse's organs was simultaneously imaged by the prototype. This result implies that the Compton camera is expected to become a multi-probe tracker available in nuclear medicine and small animal imaging.

Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

NASA Astrophysics Data System (ADS)

Cha, B. K.; kim, J. Y.; Kim, T. J.; Sim, C.; Cho, G.; Lee, D. H.; Seo, C.-W.; Jeon, S.; Huh, Y.

2011-01-01

In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd2O2S:Tb and 6LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd2O2S:Tb and 6LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm2 active area and 48μm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x106n/cm2/s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.

Testbed Experiment for SPIDER: A Photonic Integrated Circuit-based Interferometric imaging system

NASA Astrophysics Data System (ADS)

Badham, K.; Duncan, A.; Kendrick, R. L.; Wuchenich, D.; Ogden, C.; Chriqui, G.; Thurman, S. T.; Su, T.; Lai, W.; Chun, J.; Li, S.; Liu, G.; Yoo, S. J. B.

The Lockheed Martin Advanced Technology Center (LM ATC) and the University of California at Davis (UC Davis) are developing an electro-optical (EO) imaging sensor called SPIDER (Segmented Planar Imaging Detector for Electro-optical Reconnaissance) that seeks to provide a 10x to 100x size, weight, and power (SWaP) reduction alternative to the traditional bulky optical telescope and focal-plane detector array. The substantial reductions in SWaP would reduce cost and/or provide higher resolution by enabling a larger-aperture imager in a constrained volume. Our SPIDER imager replaces the traditional optical telescope and digital focal plane detector array with a densely packed interferometer array based on emerging photonic integrated circuit (PIC) technologies that samples the object being imaged in the Fourier domain (i.e., spatial frequency domain), and then reconstructs an image. Our approach replaces the large optics and structures required by a conventional telescope with PICs that are accommodated by standard lithographic fabrication techniques (e.g., complementary metal-oxide-semiconductor (CMOS) fabrication). The standard EO payload integration and test process that involves precision alignment and test of optical components to form a diffraction limited telescope is, therefore, replaced by in-process integration and test as part of the PIC fabrication, which substantially reduces associated schedule and cost. In this paper we describe the photonic integrated circuit design and the testbed used to create the first images of extended scenes. We summarize the image reconstruction steps and present the final images. We also describe our next generation PIC design for a larger (16x area, 4x field of view) image.

Scanning electron microscope observation of dislocations in semiconductor and metal materials.

PubMed

Kuwano, Noriyuki; Itakura, Masaru; Nagatomo, Yoshiyuki; Tachibana, Shigeaki

2010-08-01

Scanning electron microscope (SEM) image contrasts have been investigated for dislocations in semiconductor and metal materials. It is revealed that single dislocations can be observed in a high contrast in SEM images formed by backscattered electrons (BSE) under the condition of a normal configuration of SEM. The BSE images of dislocations were compared with those of the transmission electron microscope and scanning transmission electron microscope (STEM) and the dependence of BSE image contrast on the tilting of specimen was examined to discuss the origin of image contrast. From the experimental results, it is concluded that the BSE images of single dislocations are attributed to the diffraction effect and related with high-angle dark-field images of STEM.

Irradiation properties of T0 chopper components

NASA Astrophysics Data System (ADS)

Itoh, Shinichi; Ueno, Kenji; Ohkubo, Ryuji; Sagehashi, Hidenori; Funahashi, Yoshisato; Yokoo, Tetsuya

2011-10-01

We investigated the irradiation properties of the components of a T0 chopper. The organic materials in the rotor bearing grease, the magnetic fluids in seals, and the rubber in the timing belt, as well as the semiconductor materials in the rotation sensor and motor encoder, were all irradiated with high-energy γ-rays up to 100 kGy. No significant damage that shortens the lifetime of a T0 chopper was observed for the mechanical components. However, the semiconductor components were damaged by the irradiation. For the rotation sensor system detecting the rotor phase, the signal from a marker on the rotor shaft was transmitted outside the shielding by an optical fiber with radiation-proofing and the electrical circuits were removed from the beamline shielding. The lifetime of the motor encoder possibly meets the requirement for the maintenance period of the T0 chopper.

Testing FLUKA on neutron activation of Si and Ge at nuclear research reactor using gamma spectroscopy

NASA Astrophysics Data System (ADS)

Bazo, J.; Rojas, J. M.; Best, S.; Bruna, R.; Endress, E.; Mendoza, P.; Poma, V.; Gago, A. M.

2018-03-01

Samples of two characteristic semiconductor sensor materials, silicon and germanium, have been irradiated with neutrons produced at the RP-10 Nuclear Research Reactor at 4.5 MW. Their radionuclides photon spectra have been measured with high resolution gamma spectroscopy, quantifying four radioisotopes (28Al, 29Al for Si and 75Ge and 77Ge for Ge). We have compared the radionuclides production and their emission spectrum data with Monte Carlo simulation results from FLUKA. Thus we have tested FLUKA's low energy neutron library (ENDF/B-VIIR) and decay photon scoring with respect to the activation of these semiconductors. We conclude that FLUKA is capable of predicting relative photon peak amplitudes, with gamma intensities greater than 1%, of produced radionuclides with an average uncertainty of 13%. This work allows us to estimate the corresponding systematic error on neutron activation simulation studies of these sensor materials.

Solid state lasers for use in non-contact temperature measurements

NASA Technical Reports Server (NTRS)

Buoncristiani, A. M.

1989-01-01

The last decade has seen a series of dramatic developments in solid state laser technology. Prominent among these has been the emergence of high power semiconductor laser diode arrays and a deepening understanding of the dynamics of solid state lasers. Taken in tandem these two developments enable the design of laser diode pumped solid state lasers. Pumping solid state lasers with semiconductor diodes relieves the need for cumbersome and inefficient flashlamps and results in an efficient and stable laser with the compactness and reliability. It provides a laser source that can be reliably used in space. These new coherent sources are incorporated into the non-contact measurement of temperature. The primary focus is the development and characterization of new optical materials for use in active remote sensors of the atmosphere. In the course of this effort several new materials and new concepts were studied which can be used for other sensor applications. The general approach to the problem of new non-contact temperature measurements has had two components. The first component centers on passive sensors using optical fibers; an optical fiber temperature sensor for the drop tube was designed and tested at the Marshall Space Flight Center. Work on this problem has given insight into the use of optical fibers, especially new IR fibers, in thermal metrology. The second component of the effort is to utilize the experience gained in the study of passive sensors to examine new active sensor concepts. By active sensor are defined as a sensing device or mechanism which is interrogated in some way be radiation, usually from a laser. The status of solid state lasers as sources for active non-contact temperature sensors are summarized. Some specific electro-optic techniques are described which are applicable to the sensor problems at hand. Work on some of these ideas is in progress while other concepts are still being worked out.

Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

NASA Technical Reports Server (NTRS)

Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

2012-01-01

A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

Charge transfer excitons and image potential states on organic semiconductor surfaces

NASA Astrophysics Data System (ADS)

Yang, Qingxin; Muntwiler, Matthias; Zhu, X.-Y.

2009-09-01

We report two types of excited electronic states on organic semiconductor surfaces: image potential states (IPS) and charge transfer excitons (CTE). In the former, an excited electron is localized in the surface-normal direction by the image potential and delocalized in the surface plane. In the latter, the electron is localized in all directions by both the image potential and the Coulomb potential from a photogenerated hole on an organic molecule. We use crystalline pentacene and tetracene surfaces as model systems, and time- and angle-resolved two-photon photoemission spectroscopy to probe the energetics and dynamics of both the IPS and the CTE states. On either pentacene or tetracene surfaces, we observe delocalized image bands and a series of CT excitons with binding energies <0.5eV below the image-band minimum. The binding energies of these CT excitons agree well with solutions to the atomic-H-like Schrödinger equation based on the image potential and the electron-hole Coulomb potential. We hypothesize that the formation of CT excitons should be general to the surfaces of organic semiconductors where the relatively narrow valance-band width facilitates the localization of the hole and the low dielectric constant ensures strong electron-hole attraction.

Optical Fiber Chemical Sensor with Sol-Gel Derived Refractive Material as Transducer for High Temperature Gas Sensing in Clean Coal Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiquan Tao

2006-12-31

The chemistry of sol-gel derived silica and refractive metal oxide has been systematically studied. Sol-gel processes have been developed for preparing porous silica and semiconductor metal oxide materials. Micelle/reversed micelle techniques have been developed for preparing nanometer sized semiconductor metal oxides and noble metal particles. Techniques for doping metal ions, metal oxides and nanosized metal particles into porous sol-gel material have also been developed. Optical properties of sol-gel derived materials in ambient and high temperature gases have been studied by using fiber optic spectroscopic techniques, such as fiber optic ultraviolet/visible absorption spectrometry, fiber optic near infrared absorption spectrometry and fibermore » optic fluorescence spectrometry. Fiber optic spectrometric techniques have been developed for investigating the optical properties of these sol-gel derived materials prepared as porous optical fibers or as coatings on the surface of silica optical fibers. Optical and electron microscopic techniques have been used to observe the microstructure, such as pore size, pore shape, sensing agent distribution, of sol-gel derived material, as well as the size and morphology of nanometer metal particle doped in sol-gel derived porous silica, the nature of coating of sol-gel derived materials on silica optical fiber surface. In addition, the chemical reactions of metal ion, nanostructured semiconductor metal oxides and nanometer sized metal particles with gas components at room temperature and high temperatures have also been investigated with fiber optic spectrometric methods. Three classes of fiber optic sensors have been developed based on the thorough investigation of sol-gel chemistry and sol-gel derived materials. The first group of fiber optic sensors uses porous silica optical fibers doped with metal ions or metal oxide as transducers for sensing trace NH{sub 3} and H{sub 2}S in high temperature gas samples. The second group of fiber optic sensors uses sol-gel derived porous silica materials doped with nanometer particles of noble metals in the form of fiber or coating for sensing trace H{sub 2}, NH{sub 3} and HCl in gas samples at for applications ambient temperature. The third classes of fiber optic sensors use sol-gel derived semiconductor metal oxide coating on the surface of silica optical fiber as transducers for selectively sensing H{sub 2}, CH{sub 4} and CO at high temperature. In addition, optical fiber temperature sensors use the fluorescence signal of rare-earth metal ions doped porous silica optical fiber or the optical absorption signal of thermochromic metal oxide materials coated on the surface of silica optical fibers have also been developed for monitoring gas temperature of corrosive gas. Based on the results obtained from this project, the principle of fiber optic sensor techniques for monitoring matrix gas components as well as trace components of coal gasification derived syngas has been established. Prototype sensors for sensing trace ammonia and hydrogen sulfide in gasification derived syngas have been built up in our laboratory and have been tested using gas samples with matrix gas composition similar to that of gasification derived fuel gas. Test results illustrated the feasibility of these sensors for applications in IGCC processes.« less

AuNPs Hybrid Black ZnO Nanorods Made by a Sol-Gel Method for Highly Sensitive Humidity Sensing

PubMed Central

Zhang, Min; Lin, Cunchong; Zhang, Jun

2018-01-01

A highly sensitive self-powered humidity sensor has been realized from AuNPs hybrid black zinc oxide (ZnO) nanorods prepared through a sol-gel method. XRD pattern reveals that both ZnO and ZnO/AuNPs exhibit a wurtzite structure. ZnO/AuNPs nanorods grow in a vertical alignment, which possesses high uniformity and forms dense arrays with a smaller diameter than that of ZnO nanoparticles. All ZnO/AuNPs and pure black ZnO show lower band gap energy than the typically reported 3.34 eV of pure ZnO. Furthermore, the band gap of ZnO/AuNPs nanocomposites is effectively influenced by the amount of AuNPs. The humidity sensing tests clearly prove that all the ZnO/AuNPs humidity sensors exhibit much higher response than that of ZnO sensors, and the sensitivity of such ZnO/AuNPs nanorods (6 mL AuNPs) display a change three orders higher than that of pure ZnO with relative humidity (RH) ranging from 11% to 95% at room temperature. The response and recovery time of the ZnO/AuNPs are 5.6 s and 32.4 s, respectively. This study of the construction of semiconductor/noble metal sensors provides a rational way to control the morphology of semiconductor nanomaterials and to design a humidity sensor with high performance. PMID:29342860

AuNPs Hybrid Black ZnO Nanorods Made by a Sol-Gel Method for Highly Sensitive Humidity Sensing.

PubMed

Zhang, Hongyan; Zhang, Min; Lin, Cunchong; Zhang, Jun

2018-01-13

A highly sensitive self-powered humidity sensor has been realized from AuNPs hybrid black zinc oxide (ZnO) nanorods prepared through a sol-gel method. XRD pattern reveals that both ZnO and ZnO/AuNPs exhibit a wurtzite structure. ZnO/AuNPs nanorods grow in a vertical alignment, which possesses high uniformity and forms dense arrays with a smaller diameter than that of ZnO nanoparticles. All ZnO/AuNPs and pure black ZnO show lower band gap energy than the typically reported 3.34 eV of pure ZnO. Furthermore, the band gap of ZnO/AuNPs nanocomposites is effectively influenced by the amount of AuNPs. The humidity sensing tests clearly prove that all the ZnO/AuNPs humidity sensors exhibit much higher response than that of ZnO sensors, and the sensitivity of such ZnO/AuNPs nanorods (6 mL AuNPs) display a change three orders higher than that of pure ZnO with relative humidity (RH) ranging from 11% to 95% at room temperature. The response and recovery time of the ZnO/AuNPs are 5.6 s and 32.4 s, respectively. This study of the construction of semiconductor/noble metal sensors provides a rational way to control the morphology of semiconductor nanomaterials and to design a humidity sensor with high performance.

Taking Advantage of Selective Change Driven Processing for 3D Scanning

PubMed Central

Vegara, Francisco; Zuccarello, Pedro; Boluda, Jose A.; Pardo, Fernando

2013-01-01

This article deals with the application of the principles of SCD (Selective Change Driven) vision to 3D laser scanning. Two experimental sets have been implemented: one with a classical CMOS (Complementary Metal-Oxide Semiconductor) sensor, and the other one with a recently developed CMOS SCD sensor for comparative purposes, both using the technique known as Active Triangulation. An SCD sensor only delivers the pixels that have changed most, ordered by the magnitude of their change since their last readout. The 3D scanning method is based on the systematic search through the entire image to detect pixels that exceed a certain threshold, showing the SCD approach to be ideal for this application. Several experiments for both capturing strategies have been performed to try to find the limitations in high speed acquisition/processing. The classical approach is limited by the sequential array acquisition, as predicted by the Nyquist–Shannon sampling theorem, and this has been experimentally demonstrated in the case of a rotating helix. These limitations are overcome by the SCD 3D scanning prototype achieving a significantly higher performance. The aim of this article is to compare both capturing strategies in terms of performance in the time and frequency domains, so they share all the static characteristics including resolution, 3D scanning method, etc., thus yielding the same 3D reconstruction in static scenes. PMID:24084110

Penicillin biosensor based on a capacitive field-effect structure functionalized with a dendrimer/carbon nanotube multilayer.

PubMed

Siqueira, José R; Abouzar, Maryam H; Poghossian, Arshak; Zucolotto, Valtencir; Oliveira, Osvaldo N; Schöning, Michael J

2009-10-15

Silicon-based sensors incorporating biomolecules are advantageous for processing and possible biological recognition in a small, reliable and rugged manufactured device. In this study, we report on the functionalization of field-effect (bio-)chemical sensors with layer-by-layer (LbL) films containing single-walled carbon nanotubes (SWNTs) and polyamidoamine (PAMAM) dendrimers. A capacitive electrolyte-insulator-semiconductor (EIS) structure modified with carbon nanotubes (EIS-NT) was built, which could be used as a penicillin biosensor. From atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) images, the LbL films were shown to be highly porous due to interpenetration of SWNTs into the dendrimer layers. Capacitance-voltage (C/V) measurements pointed to a high pH sensitivity of ca. 55 mV/pH for the EIS-NT structures. The biosensing ability towards penicillin of an EIS-NT-penicillinase biosensor was also observed as the flat-band voltage shifted to lower potentials at different penicillin concentrations. A dynamic response of penicillin concentrations, ranging from 5.0 microM to 25 mM, was evaluated for an EIS-NT with the penicillinase enzyme immobilized onto the surfaces, via constant-capacitance (ConCap) measurements, achieving a sensitivity of ca. 116 mV/decade. The presence of the nanostructured PAMAM/SWNT LbL film led to sensors with higher sensitivity and better performance.

Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor

NASA Astrophysics Data System (ADS)

Parashurama, Natesh; O'Sullivan, Thomas D.; De La Zerda, Adam; El Kalassi, Pascale; Cho, Seongjae; Liu, Hongguang; Teed, Robert; Levy, Hart; Rosenberg, Jarrett; Cheng, Zhen; Levi, Ofer; Harris, James S.; Gambhir, Sanjiv S.

2012-11-01

Molecular optical imaging is a widespread technique for interrogating molecular events in living subjects. However, current approaches preclude long-term, continuous measurements in awake, mobile subjects, a strategy crucial in several medical conditions. Consequently, we designed a novel, lightweight miniature biosensor for in vivo continuous optical sensing. The biosensor contains an enclosed vertical-cavity surface-emitting semiconductor laser and an adjacent pair of near-infrared optically filtered detectors. We employed two sensors (dual sensing) to simultaneously interrogate normal and diseased tumor sites. Having established the sensors are precise with phantom and in vivo studies, we performed dual, continuous sensing in tumor (human glioblastoma cells) bearing mice using the targeted molecular probe cRGD-Cy5.5, which targets αVβ3 cell surface integrins in both tumor neovasculature and tumor. The sensors capture the dynamic time-activity curve of the targeted molecular probe. The average tumor to background ratio after signal calibration for cRGD-Cy5.5 injection is approximately 2.43±0.95 at 1 h and 3.64±1.38 at 2 h (N=5 mice), consistent with data obtained with a cooled charge coupled device camera. We conclude that our novel, portable, precise biosensor can be used to evaluate both kinetics and steady state levels of molecular probes in various disease applications.

Measurements of Effective Schottky Barrier in Inverse Extraordinary Optoconductance Structures

NASA Astrophysics Data System (ADS)

Tran, L. C.; Werner, F. M.; Solin, S. A.; Gilbertson, Adam; Cohen, L. F.

2013-03-01

Individually addressable optical sensors with dimensions as low as 250nm, fabricated from metal semiconductor hybrid structures (MSH) of AuTi-GaAs Schottky interfaces, display a transition from resistance decreasing with intensity in micron-scale sensors (Extraordinary Optoconductance, EOC) to resistance increasing with intensity in nano-scale sensors (Inverse Extraordinary Optoconductance I-EOC). I-EOC is attributed to a ballistic to diffusive crossover with the introduction of photo-induced carriers and gives rise to resistance changes of up to 9462% in 250nm devices. We characterize the photo-dependence of the effective Schottky barrier in EOC/I-EOC structures by the open circuit voltage and reverse bias resistance. Under illumination by a 5 mW, 632.8 nm HeNe laser, the barrier is negligible and the Ti-GaAs interface becomes Ohmic. Comparing the behavior of two devices, one with leads exposed, another with leads covered by an opaque epoxy, the variation in Voc with the position of the laser can be attributed to a photovoltaic effect of the lead metal and bulk GaAs. The resistance is unaffected by the photovoltaic offset of the leads, as indicated by the radial symmetry of 2-D resistance maps obtained by rastering a laser across EOC/IEOC devices. SAS has a financial interest in PixelEXX, a start-up company whose mission is to market imaging arrays.

Liquid crystal devices based on photoalignment and photopatterning materials

NASA Astrophysics Data System (ADS)

Chigrinov, Vladimir

2014-02-01

Liquid crystal (LC) display and photonics devices based on photo-alignment and photo-patterning LC cells are developed. A fast switchable grating based on ferroelectric liquid crystals and orthogonal planar alignment by means of photo alignments. Both 1D and 2D gratings have been constructed. The proposed diffracting element provides fast response time of around 20 μs, contrast of 7000:1 and high diffraction efficiency, at the electric field of 6V/μm. A switchable LC Fresnel zone lens was also developed with the efficiency of ~42% that can be further improved, and the switching time for the 3 μm thick cell is ~6.7 ms which is relatively fast in comparison of existing devices. Thus, because of the photoalignment technology the fabrication of Fresnel lens became considerably simpler than others. A thin high spatial resolution, photo-patterned micropolarizer array for complementary metal-oxide-semiconductor (CMOS) image sensors was implemented for the complete optical visualization of so called "invisible" objects, which are completely transparent (reflective) and colorless. Four Stokes parameters, which fully characterized the reflected light beam can be simultaneously detected using the array of photo-patterned polarizers on CMOS sensor plate. The cheap, high resolution photo-patterned LC matrix sensor was developed to be able successfully compete with the expensive and low reliable wire grid polarizer patterned arrays currently used for the purpose.

Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor

PubMed Central

Parashurama, Natesh; O’Sullivan, Thomas D.; De La Zerda, Adam; El Kalassi, Pascale; Cho, Seongjae; Liu, Hongguang; Teed, Robert; Levy, Hart; Rosenberg, Jarrett; Cheng, Zhen; Levi, Ofer; Harris, James S.

2012-01-01

Abstract. Molecular optical imaging is a widespread technique for interrogating molecular events in living subjects. However, current approaches preclude long-term, continuous measurements in awake, mobile subjects, a strategy crucial in several medical conditions. Consequently, we designed a novel, lightweight miniature biosensor for in vivo continuous optical sensing. The biosensor contains an enclosed vertical-cavity surface-emitting semiconductor laser and an adjacent pair of near-infrared optically filtered detectors. We employed two sensors (dual sensing) to simultaneously interrogate normal and diseased tumor sites. Having established the sensors are precise with phantom and in vivo studies, we performed dual, continuous sensing in tumor (human glioblastoma cells) bearing mice using the targeted molecular probe cRGD-Cy5.5, which targets αVβ3 cell surface integrins in both tumor neovasculature and tumor. The sensors capture the dynamic time-activity curve of the targeted molecular probe. The average tumor to background ratio after signal calibration for cRGD-Cy5.5 injection is approximately 2.43±0.95 at 1 h and 3.64±1.38 at 2 h (N=5 mice), consistent with data obtained with a cooled charge coupled device camera. We conclude that our novel, portable, precise biosensor can be used to evaluate both kinetics and steady state levels of molecular probes in various disease applications. PMID:23123976

Real-Time QoS Routing Protocols in Wireless Multimedia Sensor Networks: Study and Analysis.

PubMed

Alanazi, Adwan; Elleithy, Khaled

2015-09-02

Many routing protocols have been proposed for wireless sensor networks. These routing protocols are almost always based on energy efficiency. However, recent advances in complementary metal-oxide semiconductor (CMOS) cameras and small microphones have led to the development of Wireless Multimedia Sensor Networks (WMSN) as a class of wireless sensor networks which pose additional challenges. The transmission of imaging and video data needs routing protocols with both energy efficiency and Quality of Service (QoS) characteristics in order to guarantee the efficient use of the sensor nodes and effective access to the collected data. Also, with integration of real time applications in Wireless Senor Networks (WSNs), the use of QoS routing protocols is not only becoming a significant topic, but is also gaining the attention of researchers. In designing an efficient QoS routing protocol, the reliability and guarantee of end-to-end delay are critical events while conserving energy. Thus, considerable research has been focused on designing energy efficient and robust QoS routing protocols. In this paper, we present a state of the art research work based on real-time QoS routing protocols for WMSNs that have already been proposed. This paper categorizes the real-time QoS routing protocols into probabilistic and deterministic protocols. In addition, both categories are classified into soft and hard real time protocols by highlighting the QoS issues including the limitations and features of each protocol. Furthermore, we have compared the performance of mobility-aware query based real-time QoS routing protocols from each category using Network Simulator-2 (NS2). This paper also focuses on the design challenges and future research directions as well as highlights the characteristics of each QoS routing protocol.

Real-Time QoS Routing Protocols in Wireless Multimedia Sensor Networks: Study and Analysis

PubMed Central

Alanazi, Adwan; Elleithy, Khaled

2015-01-01

Many routing protocols have been proposed for wireless sensor networks. These routing protocols are almost always based on energy efficiency. However, recent advances in complementary metal-oxide semiconductor (CMOS) cameras and small microphones have led to the development of Wireless Multimedia Sensor Networks (WMSN) as a class of wireless sensor networks which pose additional challenges. The transmission of imaging and video data needs routing protocols with both energy efficiency and Quality of Service (QoS) characteristics in order to guarantee the efficient use of the sensor nodes and effective access to the collected data. Also, with integration of real time applications in Wireless Senor Networks (WSNs), the use of QoS routing protocols is not only becoming a significant topic, but is also gaining the attention of researchers. In designing an efficient QoS routing protocol, the reliability and guarantee of end-to-end delay are critical events while conserving energy. Thus, considerable research has been focused on designing energy efficient and robust QoS routing protocols. In this paper, we present a state of the art research work based on real-time QoS routing protocols for WMSNs that have already been proposed. This paper categorizes the real-time QoS routing protocols into probabilistic and deterministic protocols. In addition, both categories are classified into soft and hard real time protocols by highlighting the QoS issues including the limitations and features of each protocol. Furthermore, we have compared the performance of mobility-aware query based real-time QoS routing protocols from each category using Network Simulator-2 (NS2). This paper also focuses on the design challenges and future research directions as well as highlights the characteristics of each QoS routing protocol. PMID:26364639

A graphene-based Fabry-Pérot spectrometer in mid-infrared region

PubMed Central

Wang, Xiaosai; Chen, Chen; Pan, Liang; Wang, Jicheng

2016-01-01

Mid-infrared spectroscopy is of great importance in many areas and its integration with thin-film technology can economically enrich the functionalities of many existing devices. In this paper we propose a graphene-based ultra-compact spectrometer (several micrometers in size) that is compatible with complementary metal-oxide-semiconductor (CMOS) processing. The proposed structure uses a monolayer graphene as a mid-infrared surface waveguide, whose optical response is spatially modulated using electric fields to form a Fabry-Pérot cavity. By varying the voltage acting on the cavity, we can control the transmitted wavelength of the spectrometer at room temperature. This design has potential applications in the graphene-silicon-based optoelectronic devices as it offers new possibilities for developing new ultra-compact spectrometers and low-cost hyperspectral imaging sensors in mid-infrared region. PMID:27573080

Nanophotonic Image Sensors.

PubMed

Chen, Qin; Hu, Xin; Wen, Long; Yu, Yan; Cumming, David R S

2016-09-01

The increasing miniaturization and resolution of image sensors bring challenges to conventional optical elements such as spectral filters and polarizers, the properties of which are determined mainly by the materials used, including dye polymers. Recent developments in spectral filtering and optical manipulating techniques based on nanophotonics have opened up the possibility of an alternative method to control light spectrally and spatially. By integrating these technologies into image sensors, it will become possible to achieve high compactness, improved process compatibility, robust stability and tunable functionality. In this Review, recent representative achievements on nanophotonic image sensors are presented and analyzed including image sensors with nanophotonic color filters and polarizers, metamaterial-based THz image sensors, filter-free nanowire image sensors and nanostructured-based multispectral image sensors. This novel combination of cutting edge photonics research and well-developed commercial products may not only lead to an important application of nanophotonics but also offer great potential for next generation image sensors beyond Moore's Law expectations. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

European roadmap on superconductive electronics - status and perspectives

NASA Astrophysics Data System (ADS)

Anders, S.; Blamire, M. G.; Buchholz, F.-Im.; Crété, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.; Siegel, M.; Stolz, R.; Tarte, E.; ter Brake, H. J. M.; Toepfer, H.; Villegier, J.-C.; Zagoskin, A. M.; Zorin, A. B.

2010-12-01

Executive SummaryFor four decades semiconductor electronics has followed Moore’s law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ0. The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit ‘Volt’ is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many other applications SQUIDs are used as sensors for magnetic heart and brain signals in medical applications, as sensor for geological surveying and food-processing and for non-destructive testing. As amplifiers of electrical signals, SQUIDs can nearly reach the theoretical limit given by Quantum Mechanics. A further important field of application is the detection of very weak signals by ‘transition-edge’ bolometers, superconducting nanowire single-photon detectors, and superconductive tunnel junctions. Their application as radiation detectors in a wide frequency range, from microwaves to X-rays is now standard. The very low losses of superconductors have led to commercial microwave filter designs that are now widely used in the USA in base stations for cellular phones and in military communication applications. The number of demonstrated applications is continuously increasing and there is no area in professional electronics, in which superconductive electronics cannot be applied and surpasses the performance of classical devices. Superconductive electronics has to be cooled to very low temperatures. Whereas this was a bottleneck in the past, cooling techniques have made a huge step forward in recent years: very compact systems with high reliability and a wide range of cooling power are available commercially, from microcoolers of match-box size with milli-Watt cooling power to high-reliability coolers of many Watts of cooling power for satellite applications. Superconductive electronics will not replace semiconductor electronics and similar room-temperature techniques in standard applications, but for those applications which require very high speed, low-power consumption, extreme sensitivity or extremely high precision, superconductive electronics is superior to all other available techniques. To strengthen the European competitiveness in superconductor electronics research projects have to be set-up in the following field: Ultra-sensitive sensing and imaging. Quantum measurement instrumentation. Advanced analogue-to-digital converters. Superconductive electronics technology.

Ultrafast all-optical imaging technique using low-temperature grown GaAs/AlxGa1 - xAs multiple-quantum-well semiconductor

NASA Astrophysics Data System (ADS)

Gao, Guilong; Tian, Jinshou; Wang, Tao; He, Kai; Zhang, Chunmin; Zhang, Jun; Chen, Shaorong; Jia, Hui; Yuan, Fenfang; Liang, Lingliang; Yan, Xin; Li, Shaohui; Wang, Chao; Yin, Fei

2017-11-01

We report and experimentally demonstrate an ultrafast all-optical imaging technique capable of single-shot ultrafast recording with a picosecond-scale temporal resolution and a micron-order two-dimensional spatial resolution. A GaAs/AlxGa1 - xAs multiple-quantum-well (MQW) semiconductor with a picosecond response time, grown using molecular beam epitaxy (MBE) at a low temperature (LT), is used for the first time in ultrafast imaging technology. The semiconductor transforms the signal beam information to the probe beam, the birefringent delay crystal time-serializes the input probe beam, and the beam displacer maps different polarization probe beams onto different detector locations, resulting in two frames with an approximately 9 ps temporal separation and approximately 25 lp/mm spatial resolution in the visible range.

Feasibility of a semiconductor dosimeter to monitor skin dose in interventional radiology.

PubMed

Meyer, P; Regal, R; Jung, M; Siffert, P; Mertz, L; Constantinesco, A

2001-10-01

The design and preliminary test results of a semiconductor silicon dosimeter are presented in this article. Use of this dosimeter is foreseen for real-time skin dose control in interventional radiology. The strong energy dependence of this kind of radiation detector is well overcome by filtering the silicon diode. Here, the optimal filter features have been calculated by numerical Monte Carlo simulations. A prototype has been built and tested in a radiological facility. The first experimental results show a good match between the filtered semiconductor diode response and an ionization chamber response, within 2% fluctuation in a 2.2 to 4.1 mm Al half-value layer (HVL) energy range. Moreover, the semiconductor sensor response is linear from 0.02 Gy/min to at least 6.5 Gy/min, covering the whole dose rate range found in interventional radiology. The results show that a semiconductor dosimeter could be used to monitor skin dose during the majority of procedures using x-rays below 150 keV. The use of this device may assist in avoiding radiation-induced skin injuries and lower radiation levels during interventional procedures.

SiC-Based Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

1997-01-01

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Piezoresistive silicon pressure sensors in cryogenic environment

NASA Technical Reports Server (NTRS)

Kahng, Seun K.; Chapman, John J.

1989-01-01

This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

PubMed Central

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0–300 kPa. PMID:22303167

A zirconium dioxide ammonia microsensor integrated with a readout circuit manufactured using the 0.18 μm CMOS process.

PubMed

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi

2013-03-15

The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm.

Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip.

PubMed

Dai, Ching-Liang; Lu, Po-Wei; Chang, Chienliu; Liu, Cheng-Yang

2009-01-01

The study investigates a capacitive micro pressure sensor integrated with a ring oscillator circuit on a chip. The integrated capacitive pressure sensor is fabricated using the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The ring oscillator is employed to convert the capacitance of the pressure sensor into the frequency output. The pressure sensor consists of 16 sensing cells in parallel. Each sensing cell contains a top electrode and a lower electrode, and the top electrode is a sandwich membrane. The pressure sensor needs a post-CMOS process to release the membranes after completion of the CMOS process. The post-process uses etchants to etch the sacrificial layers, and to release the membranes. The advantages of the post-process include easy execution and low cost. Experimental results reveal that the pressure sensor has a high sensitivity of 7 Hz/Pa in the pressure range of 0-300 kPa.

Electron transporting water-gated thin film transistors

NASA Astrophysics Data System (ADS)

Al Naim, Abdullah; Grell, Martin

2012-10-01

We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs.

Piezoresistive effect in metal-semiconductor-metal structures on p-type GaN

NASA Astrophysics Data System (ADS)

Gaska, R.; Shur, M. S.; Bykhovski, A. D.; Yang, J. W.; Khan, M. A.; Kaminski, V. V.; Soloviov, S. M.

2000-06-01

We report on a strong piezoresistive effect in metal-semiconductor-metal structures fabricated on p-type GaN. The maximum measured gauge factor was 260, which is nearly two times larger than for piezoresistive silicon transducers. We attribute this large sensitivity to applied strain to the combination of two mechanisms: (i) a high piezoresistance of bulk p-GaN and (ii) a strong piezoresistive effect in a Schottky contact on p-GaN. The obtained results demonstrate that GaN-based structures can be suitable for stress/pressure sensor applications.

Semiconductor Cubing

NASA Technical Reports Server (NTRS)

1996-01-01

Through Goddard Space Flight Center and Jet Propulsion Laboratory Small Business Innovation Research contracts, Irvine Sensors developed a three-dimensional memory system for a spaceborne data recorder and other applications for NASA. From these contracts, the company created the Memory Short Stack product, a patented technology for stacking integrated circuits that offers higher processing speeds and levels of integration, and lower power requirements. The product is a three-dimensional semiconductor package in which dozens of integrated circuits are stacked upon each other to form a cube. The technology is being used in various computer and telecommunications applications.

Digital dental radiology in Belgium: a nationwide survey.

PubMed

Snel, Robin; Van De Maele, Ellen; Politis, Constantinus; Jacobs, Reinhilde

2018-06-27

The aim of this study is to analyse the use of digital dental radiology in Belgium, by focussing on the use of extraoral and intraoral radiographic techniques, digitalisation and image communication. A nationwide survey has been performed amongst Belgian general dentists and dental specialists. Questionnaires were distributed digitally via mailings lists and manually on multiple refresher courses and congresses throughout the country. The overall response rate was 30%. Overall, 94% of the respondents had access to an intraoral radiographic unit, 76% had access to a panoramic unit, 21% has an attached cephalometric arm. One in five Belgian dentists also seem to have direct access to a cone beam CT. 90% of all intraoral radiography unit worked with digital detectors, while this was 91% for panoramic units (with or without cephalometrics). In 70% of the cases, general dental practitioners with a digital intraoral unit used a storage phosphor plate while in 30% of the cases they used sensor technology (charge-coupled device or complementary metal-oxide-semiconductor). The most common method for professional image transfer appeared to be email. Finally, 16% of all respondents used a calibrated monitor for image analysis. The survey indicates that 90% of the respondents, Belgian dentists, make use of digital image techniques. For sharing images, general dental practitioners mainly use methods such as printout and e-mail. The usage of calibrated monitors, however, is not well established yet.

3D-profile measurement of advanced semiconductor features by using FIB as reference metrology

NASA Astrophysics Data System (ADS)

Takamasu, Kiyoshi; Iwaki, Yuuki; Takahashi, Satoru; Kawada, Hiroki; Ikota, Masami

2017-03-01

A novel method of sub-nanometer uncertainty for the 3D-profile measurement and LWR (Line Width Roughness) measurement by using FIB (Focused Ion Beam) processing, and TEM (Transmission Electron Microscope) and CD-SEM (Critical Dimension Scanning Electron Microscope) images measurement is proposed to standardize 3D-profile measurement through reference metrology. In this article, we apply the methodology to line profile measurements and roughness measurement of advanced FinFET (Fin-shaped Field-Effect Transistor) features. The FinFET features are horizontally sliced as a thin specimen by FIB micro sampling system. Horizontally images of the specimens are obtained then by a planar TEM. LWR is calculated from the edges positions on TEM images. Moreover, we already have demonstrated the novel on-wafer 3D-profile metrology as "FIB-to-CDSEM method" with FIB slope cut and CD-SEM measuring. Using the method, a few micrometers wide on a wafer is coated and cut by 45-degree slope using FIB tool. Then, the wafer is transferred to CD-SEM to measure the cross section image by top down CD-SEM measurement. We applied FIB-to-CDSEM method to a CMOS image sensor feature. The 45-degree slope cut surface is observed using AFM. The surface profile of slope cut surface and line profiles are analyzed for improving the accuracy of FIB-to-CDSEM method.

Vital sign monitoring for elderly at home: development of a compound sensor for pulse rate and motion.

PubMed

Sum, K W; Zheng, Y P; Mak, A F T

2005-01-01

This paper describes the development of a miniaturized wearable vital sign monitor which is aimed for use by elderly at home. The development of a compound sensor for pulse rate, motion, and skin temperature is reported. A pair of infrared sensor working in reflection mode was used to detect the pulse rate from various sites over the body including the wrist and finger. Meanwhile, a motion sensor was used to detect the motion of the body. In addition, the temperature on the skin surface was sensed by a semiconductor temperature sensor. A prototype has been built into a box with a dimension of 2 x 2.5 x 4 cm3. The device includes the sensors, microprocessor, circuits, battery, and a wireless transceiver for communicating data with a data terminal.

Photoacoustic imaging with planoconcave optical microresonator sensors: feasibility studies based on phantom imaging

NASA Astrophysics Data System (ADS)

Guggenheim, James A.; Zhang, Edward Z.; Beard, Paul C.

2017-03-01

The planar Fabry-Pérot (FP) sensor provides high quality photoacoustic (PA) images but beam walk-off limits sensitivity and thus penetration depth to ≍1 cm. Planoconcave microresonator sensors eliminate beam walk-off enabling sensitivity to be increased by an order-of-magnitude whilst retaining the highly favourable frequency response and directional characteristics of the FP sensor. The first tomographic PA images obtained in a tissue-realistic phantom using the new sensors are described. These show that the microresonator sensors provide near identical image quality as the planar FP sensor but with significantly greater penetration depth (e.g. 2-3cm) due to their higher sensitivity. This offers the prospect of whole body small animal imaging and clinical imaging to depths previously unattainable using the FP planar sensor.

Study of a new design of p-N semiconductor detector array for nuclear medicine imaging by monte carlo simulation codes.

PubMed

Hajizadeh-Safar, M; Ghorbani, M; Khoshkharam, S; Ashrafi, Z

2014-07-01

Gamma camera is an important apparatus in nuclear medicine imaging. Its detection part is consists of a scintillation detector with a heavy collimator. Substitution of semiconductor detectors instead of scintillator in these cameras has been effectively studied. In this study, it is aimed to introduce a new design of P-N semiconductor detector array for nuclear medicine imaging. A P-N semiconductor detector composed of N-SnO2 :F, and P-NiO:Li, has been introduced through simulating with MCNPX monte carlo codes. Its sensitivity with different factors such as thickness, dimension, and direction of emission photons were investigated. It is then used to configure a new design of an array in one-dimension and study its spatial resolution for nuclear medicine imaging. One-dimension array with 39 detectors was simulated to measure a predefined linear distribution of Tc(99_m) activity and its spatial resolution. The activity distribution was calculated from detector responses through mathematical linear optimization using LINPROG code on MATLAB software. Three different configurations of one-dimension detector array, horizontal, vertical one sided, and vertical double-sided were simulated. In all of these configurations, the energy windows of the photopeak were ± 1%. The results show that the detector response increases with an increase of dimension and thickness of the detector with the highest sensitivity for emission photons 15-30° above the surface. Horizontal configuration array of detectors is not suitable for imaging of line activity sources. The measured activity distribution with vertical configuration array, double-side detectors, has no similarity with emission sources and hence is not suitable for imaging purposes. Measured activity distribution using vertical configuration array, single side detectors has a good similarity with sources. Therefore, it could be introduced as a suitable configuration for nuclear medicine imaging. It has been shown that using semiconductor P-N detectors such as P-NiO:Li, N-SnO2 :F for gamma detection could be possibly applicable for design of a one dimension array configuration with suitable spatial resolution of 2.7 mm for nuclear medicine imaging.

The High Definition Earth Viewing (HDEV) Payload

NASA Technical Reports Server (NTRS)

Muri, Paul; Runco, Susan; Fontanot, Carlos; Getteau, Chris

2017-01-01

The High Definition Earth Viewing (HDEV) payload enables long-term experimentation of four, commercial-of-the-shelf (COTS) high definition video, cameras mounted on the exterior of the International Space Station. The payload enables testing of cameras in the space environment. The HDEV cameras transmit imagery continuously to an encoder that then sends the video signal via Ethernet through the space station for downlink. The encoder, cameras, and other electronics are enclosed in a box pressurized to approximately one atmosphere, containing dry nitrogen, to provide a level of protection to the electronics from the space environment. The encoded video format supports streaming live video of Earth for viewing online. Camera sensor types include charge-coupled device and complementary metal-oxide semiconductor. Received imagery data is analyzed on the ground to evaluate camera sensor performance. Since payload deployment, minimal degradation to imagery quality has been observed. The HDEV payload continues to operate by live streaming and analyzing imagery. Results from the experiment reduce risk in the selection of cameras that could be considered for future use on the International Space Station and other spacecraft. This paper discusses the payload development, end-to- end architecture, experiment operation, resulting image analysis, and future work.

Modelling and testing the x-ray performance of CCD and CMOS APS detectors using numerical finite element simulations

NASA Astrophysics Data System (ADS)

Weatherill, Daniel P.; Stefanov, Konstantin D.; Greig, Thomas A.; Holland, Andrew D.

2014-07-01

Pixellated monolithic silicon detectors operated in a photon-counting regime are useful in spectroscopic imaging applications. Since a high energy incident photon may produce many excess free carriers upon absorption, both energy and spatial information can be recovered by resolving each interaction event. The performance of these devices in terms of both the energy and spatial resolution is in large part determined by the amount of diffusion which occurs during the collection of the charge cloud by the pixels. Past efforts to predict the X-ray performance of imaging sensors have used either analytical solutions to the diffusion equation or simplified monte carlo electron transport models. These methods are computationally attractive and highly useful but may be complemented using more physically detailed models based on TCAD simulations of the devices. Here we present initial results from a model which employs a full transient numerical solution of the classical semiconductor equations to model charge collection in device pixels under stimulation from initially Gaussian photogenerated charge clouds, using commercial TCAD software. Realistic device geometries and doping are included. By mapping the pixel response to different initial interaction positions and charge cloud sizes, the charge splitting behaviour of the model sensor under various illuminations and operating conditions is investigated. Experimental validation of the model is presented from an e2v CCD30-11 device under varying substrate bias, illuminated using an Fe-55 source.