Sample records for semiconductor industry implications

  1. Environmental and workplace contamination in the semiconductor industry: implications for future health of the workforce and community.

    PubMed Central

    Edelman, P

    1990-01-01

    The semiconductor industry has been an enormous worldwide growth industry. At the heart of computer and other electronic technological advances, the environment in and around these manufacturing facilities has not been scrutinized to fully detail the health effects to the workers and the community from such exposures. Hazard identification in this industry leads to the conclusion that there are many sources of potential exposure to chemicals including arsenic, solvents, photoactive polymers and other materials. As the size of the semiconductor work force expands, the potential for adverse health effects, ranging from transient irritant symptoms to reproductive effects and cancer, must be determined and control measures instituted. Risk assessments need to be effected for areas where these facilities conduct manufacturing. The predominance of women in the manufacturing areas requires evaluating the exposures to reproductive hazards and outcomes. Arsenic exposures must also be evaluated and minimized, especially for maintenance workers; evaluation for lung and skin cancers is also appropriate. PMID:2401268

  2. Computing technology in the 1980's. [computers

    NASA Technical Reports Server (NTRS)

    Stone, H. S.

    1978-01-01

    Advances in computing technology have been led by consistently improving semiconductor technology. The semiconductor industry has turned out ever faster, smaller, and less expensive devices since transistorized computers were first introduced 20 years ago. For the next decade, there appear to be new advances possible, with the rate of introduction of improved devices at least equal to the historic trends. The implication of these projections is that computers will enter new markets and will truly be pervasive in business, home, and factory as their cost diminishes and their computational power expands to new levels. The computer industry as we know it today will be greatly altered in the next decade, primarily because the raw computer system will give way to computer-based turn-key information and control systems.

  3. Where the chips fall: environmental health in the semiconductor industry.

    PubMed

    Chepesiuk, R

    1999-09-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment.

  4. Where the chips fall: environmental health in the semiconductor industry.

    PubMed Central

    Chepesiuk, R

    1999-01-01

    Three recent lawsuits are focusing public attention on the environmental and occupational health effects of the world's largest and fastest growing manufacturing sector-the $150 billion semiconductor industry. The suits allege that exposure to toxic chemicals in semiconductor manufacturing plants led to adverse health effects such as miscarriage and cancer among workers. To manufacture computer components, the semiconductor industry uses large amounts of hazardous chemicals including hydrochloric acid, toxic metals and gases, and volatile solvents. Little is known about the long-term health consequences of exposure to chemicals by semiconductor workers. According to industry critics, the semiconductor industry also adversely impacts the environment, causing groundwater and air pollution and generating toxic waste as a by-product of the semiconductor manufacturing process. In contrast, the U.S. Bureau of Statistics shows the semiconductor industry as having a worker illness rate of about one-third of the average of all manufacturers, and advocates defend the industry, pointing to recent research collaborations and product replacement as proof that semiconductor manufacturers adequately protect both their employees and the environment. PMID:10464084

  5. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    PubMed

    Bennett, Herbert S

    2007-01-01

    We discuss the ability of the nation's measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry's powerful impact in the world's macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry.

  6. Environmental and health risks of chlorine trifluoride (ClF3), an alternative to potent greenhouse gases in the semiconductor industry.

    PubMed

    Tsai, Wen-Tien

    2011-06-15

    The first accident involving chlorine trifluoride (ClF(3)) in the history of semiconductor fabrication processes occurred on 28 July 2006 at Hsinchu (Taiwan), resulting in a large release of the highly reactive material and causing the chemical burn to several workers. ClF(3) is used primarily as an in situ cleaning gas in the manufacture of semiconductor silicon-wafer devices in replacement of perfluorocompounds (PFCs) because they have the high potential to contribute significantly to the global warming. This article aimed at reviewing ClF(3) in the physicochemical properties, the industrial uses, and the environmental implications on the basis of its toxicity, reactivity, health hazards and exposure limits. The health hazards of probable decomposition/hydrolysis products from ClF(3) were also evaluated based on their basic physicochemical properties and occupational exposure limits. The occupational exposure assessment was further discussed to understand potentially hazardous risks caused by hydrogen fluoride and fluorides from the decomposition/hydrolysis products of ClF(3). Copyright © 2010 Elsevier B.V. All rights reserved.

  7. Productivity improvement through industrial engineering in the semiconductor industry

    NASA Astrophysics Data System (ADS)

    Meyersdorf, Doron

    1996-09-01

    Industrial Engineering is fairly new to the semiconductor industry, though the awareness to its importance has increased in recent years. The US semiconductor industry in particular has come to the realization that in order to remain competitive in the global market it must take the lead not only in product development but also in manufacturing. Industrial engineering techniques offer one ofthe most effective strategies for achieving manufacturing excellence. Industrial engineers play an important role in the success of the manufacturing facility. This paper defines the Industrial engineers role in the IC facility, set the visions of excellence in semiconductor manufacturing and highlights 10 roadblocks on the journey towards manufacturing excellence.

  8. NASA/DOD Aerospace Knowledge Diffusion Research Project. Paper 59: Japanese Technological Innovation. Implications for Large Commercial Aircraft and Knowledge Diffusion

    NASA Technical Reports Server (NTRS)

    Pinelli, Thomas E.; Barclay, Rebecca O.; Kotler, Mindy L.

    1997-01-01

    This paper explores three factors-public policy, the Japanese (national) innovation system, and knowledge-that influence technological innovation in Japan. To establish a context for the paper, we examine Japanese culture and the U.S. and Japanese patent systems in the background section. A brief history of the Japanese aircraft industry as a source of knowledge and technology for other industries is presented. Japanese and U.S. alliances and linkages in three sectors-biotechnology, semiconductors, and large commercial aircraft (LCA)-and the importation, absorption, and diffusion of knowledge and technology are examined next. The paper closes with implications for diffusing knowledge and technology, U.S. public policy, and LCA.

  9. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    PubMed Central

    Bennett, Herbert S.

    2007-01-01

    We discuss the ability of the nation’s measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry’s powerful impact in the world’s macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry. PMID:27110452

  10. Productivity improvement through industrial engineering in the semiconductor industry

    NASA Astrophysics Data System (ADS)

    Meyersdorf, Doron

    1996-09-01

    Industrial engineering is fairly new to the semiconductor industry, though the awareness to its importance has increased in recent years. The U.S. semiconductor industry in particular has come to the realization that in order to remain competitive in the global market it must take the lead not only in product development but also in manufacturing. Industrial engineering techniques offer one of the most effective strategies for achieving manufacturing excellence. Industrial engineers play an important role in the success of the manufacturing facility. This paper defines the industrial engineers role in the IC facility, sets the visions of excellence in semiconductor manufacturing and highlights 10 roadblocks on the journey towards manufacturing excellence.

  11. Educating Tomorrow's Workforce: A Report on the Semiconductor Industry's Commitment to Youth in K-12.

    ERIC Educational Resources Information Center

    Semiconductor Industry Association, San Jose, CA.

    The U.S. semiconductor industry, now the nation's largest manufacturing industry, displays its commitment to training its current workers and educating future workers by supporting educational efforts on the K-12 level. This catalog describes innovative actions by 16 Semiconductor Industry Association companies to improve education at the K-12…

  12. Capital investment in semiconductors: The lifeblood of the US semiconductor industry

    NASA Astrophysics Data System (ADS)

    Finan, William F.

    1990-09-01

    An analysis is given of four proposals designed to improve capital formation for U.S. industry in general, and the semiconductor industry in particular. The National Advisory Committee on Semiconductors recommendations were to make the current research and experimentation (R and E) tax credit more effective, to reduce taxes on capital gains, to increase personal savings incentives, and to improve semiconductor manufacturing equipment depreciation rules. The results of the qualitative analysis of the proposals as well as a description of the methodology employed are given.

  13. Review of the Semiconductor Industry and Technology Roadmap.

    ERIC Educational Resources Information Center

    Kumar, Sameer; Krenner, Nicole

    2002-01-01

    Points out that the semiconductor industry is extremely competitive and requires ongoing technological advances to improve performance while reducing costs to remain competitive and how essential it is to gain an understanding of important facets of the industry. Provides an overview of the initial and current semiconductor technology roadmap that…

  14. Technological and organizational diversity and technical advance in the early history of the American semiconductor industry

    NASA Astrophysics Data System (ADS)

    Cohen, W.; Holbrook, D.; Klepper, S.

    1994-06-01

    This study examines the early years of the semiconductor industry and focuses on the roles played by different size firms in technologically innovative processes. A large and diverse pool of firms participated in the growth of the industry. Three related technological areas were chosen for in-depth analysis: integrated circuits, materials technology, and device packaging. Large business producing vacuum tubes dominated the early production of semiconductor devices. As the market for new devices grew during the 1950's, new firms were founded and existing firms from other industries, e.g. aircraft builders and instrument makers, began to pursue semiconductor electronics. Small firms began to cater to the emerging industry by supplying materials and equipment. These firms contributed to the development of certain aspects of one thousand firms that were playing some part in the semiconductor industry.

  15. Cancer and reproductive risks in the semiconductor industry.

    PubMed

    LaDou, Joseph; Bailar, John C

    2007-01-01

    Although many reproductive toxicants and carcinogens are used in the manufacture of semiconductor chips, and worrisome findings have been reported, no broad epidemiologic study has been conducted to define possible risks in a comprehensive way. With few exceptions, the American semiconductor industry has not supported access for independent studies. Older technologies are exported to newly industrialized countries as newer technologies are installed in Japan, the United States, and Europe. Thus there is particular concern about the many workers, mostly in countries that are still industrializing, who have jobs that use chemicals, technologies, and equipment that are no longer in use in developed countries. Since most countries lack cancer registries and have inadequate reproductive and cancer reporting mechanisms, industry efforts to control exposures to carcinogens are of particular importance. Government agencies, the courts, industry, publishers, and academia, on occasion, collude to ignore or to downplay the importance of occupational diseases. Examples of how this happens in the semiconductor industry are presented.

  16. Health and safety executive inspection of U.K. semiconductor manufacturers.

    PubMed

    Watterson, Andrew; LaDou, Joseph

    2003-01-01

    Europe plays a major role in the international semiconductor industry, but has conducted few studies of the occupational health of its workers. An exception is in the United Kingdom, where, in two small studies, the Health and Safety Executive (HSE) evaluated some health effects of semiconductor work. Neither of these studies, largely restricted to Scotland, produced definitive results, and both were misused by industry to assert that they demonstrated no adverse health effect on workers. The results of the studies prompted semiconductor industry inspections recently completed by the HSE that included chip manufacturers in Scotland and other U.K. areas. The results of these inspections are disappointing.

  17. Physics Careers in the Semiconductor Industry: OK, I'm in, now what?

    NASA Astrophysics Data System (ADS)

    Larson, Larry

    2003-03-01

    The role of the physicist working in the Semiconductor Industry differs significantly from those working in a purely academic setting. This talk will give a perspective on these differences by examining these roles in some detail. The first detail is simply ``Why are you employed by your institution?" Physicists in the Semiconductor industry are, in the most basic sense, employed to develop or sustain processes, equipment or devices in order to produce chips for sale. This very basic point colors the goals, objectives and the reward structure for the industrial physicist. I will use examples of mundane and complex physics applications from development work at SEMATECH to compare the industrial approach to my perception of an academic approach. Another important attribute of the industrial career is the strong influence of timeliness on the usefulness of our results. This leads to an emphasis of the working approach on attacking problems as a team, to the strong availability of resources, but also to the aspect that a project can fall away from the critical path and be cancelled. Some of these effects will be described with examples from the International Technology Roadmap for Semiconductors and also from SEMATECH. All in all, working as a physicist in the semiconductor industry is an exciting and rewarding career. Be aware though, that the industry is dynamic and intensive be ready for a ride!

  18. Health risk in the offspring of female semiconductor workers.

    PubMed

    Lin, Ching-Chun; Wang, Jung-Der; Hsieh, Gong-Yih; Chang, Yu-Yin; Chen, Pau-Chung

    2008-09-01

    There are no published studies focusing on adverse birth outcomes or infant mortality in the semiconductor industry. To investigate whether female workers have higher risks of any adverse birth outcome or death from congenital malformation. A total of 27,610 female workers had been employed in eight semiconductor companies in Taiwan between 1980 and 2000. Using the national birth registry, their live born children were identified, and then any deaths under 5 years of age with or without congenital malformations were identified by linking with the national death registry. Periconceptional exposure was defined as the mother having been employed in the semiconductor industry 3 months before and 3 months after conception of the live born infants. A total of 24,223 live births were included. No significant association between adverse birth outcomes or death with congenital malformation and maternal employment in semiconductor industry was found either in the period of 1980-94 or 1995-2000. There is no convincing evidence that female workers employed during the periconceptional period in the semiconductor industry had higher risks of having adverse birth outcomes or death due to congenital malformations. However, prospective research is warranted to confirm these findings.

  19. Quantifying aluminum and semiconductor industry perfluorocarbon emissions from atmospheric measurements

    NASA Astrophysics Data System (ADS)

    Kim, Jooil; Fraser, Paul J.; Li, Shanlan; Mühle, Jens; Ganesan, Anita L.; Krummel, Paul B.; Steele, L. Paul; Park, Sunyoung; Kim, Seung-Kyu; Park, Mi-Kyung; Arnold, Tim; Harth, Christina M.; Salameh, Peter K.; Prinn, Ronald G.; Weiss, Ray F.; Kim, Kyung-Ryul

    2014-07-01

    The potent anthropogenic perfluorocarbon greenhouse gases tetrafluoromethane (CF4) and hexafluoroethane (C2F6) are emitted to the atmosphere mainly by the aluminum and semiconductor industries. Global emissions of these perfluorocarbons (PFCs) calculated from atmospheric measurements are significantly greater than expected from reported national and industry-based emission inventories. In this study, in situ measurements of the two PFCs in the Advanced Global Atmospheric Gases Experiment network are used to show that their emission ratio varies according to the relative regional presence of these two industries, providing an industry-specific emission "signature" to apportion the observed emissions. Our results suggest that underestimated emissions from the global semiconductor industry during 1990-2010, as well as from China's aluminum industry after 2002, account for the observed differences between emissions based on atmospheric measurements and on inventories. These differences are significant despite the large uncertainties in emissions based on the methodologies used by these industries.

  20. Regulation of occupational health and safety in the semiconductor industry: enforcement problems and solutions.

    PubMed

    Watterson, Andrew

    2006-01-01

    Reports of high incidences of occupational illnesses in the semiconductor industry should have triggered global investigations and rigorous inspection of the industry. Yet semiconductor plants remain essentially unregulated. Health and safety standards are inadequate and enforcement is lax. Roles for stakeholders in laying down good practice, monitoring, and regulating are proposed, and obstacles are described. Effective regulation has advantages for the industry as well as workers. Conditions for best practice include education at all levels, protection and support for labor inspectors, government commitment to enforcing laws, recognition of the right of workers to organize, and recognition of their rights.

  1. A study for safety and health management problem of semiconductor industry in Taiwan.

    PubMed

    Chao, Chin-Jung; Wang, Hui-Ming; Feng, Wen-Yang; Tseng, Feng-Yi

    2008-12-01

    The main purpose of this study is to discuss and explore the safety and health management in semiconductor industry. The researcher practically investigates and interviews the input, process and output of the safety and health management of semiconductor industry by using the questionnaires and the interview method which is developed according to the framework of the OHSAS 18001. The result shows that there are six important factors for the safety and health management in Taiwan semiconductor industry. 1. The company should make employee clearly understand the safety and health laws and standards. 2. The company should make the safety and health management policy known to the public. 3. The company should put emphasis on the pursuance of the safety and health management laws. 4. The company should prevent the accidents. 5. The safety and health message should be communicated sufficiently. 6. The company should consider safety and health norm completely.

  2. Leukemia and non-Hodgkin lymphoma in semiconductor industry workers in Korea.

    PubMed

    Kim, Inah; Kim, Hyun J; Lim, Sin Y; Kongyoo, Jungok

    2012-01-01

    Reports of leukemia and non-Hodgkin lymphoma (NHL), cancers known to have a similar pathophysiology, among workers in the semiconductor industry have generated much public concern in Korea. This paper describes cases reported to the NGO Supporters for the Health and Rights of People in the Semiconductor Industry (SHARPs). We identified demographic characteristics, occupational, and disease history, for 17 leukemia and NHL cases from the Giheung Samsung semiconductor plant, diagnosed from November 2007 to January 2011. Patients were relatively young (mean = 28·5 years, SD = 6·5) at the time of diagnosis and the mean latency period was 104·3 months (SD = 65·8). Majority of the cases were fabrication operators (11 workers among 17) and 12 were hired before 2000. Six cases worked in the etching or diffusion process. The evidence to confirm the causal relationship between exposures in the semiconductor industry and leukemia or NHL remains insufficient and a more formal, independent study of the exposure-disease relationship in this occupation is needed. However, workers should be protected from the potential exposures immediately.

  3. Metrology-based control and profitability in the semiconductor industry

    NASA Astrophysics Data System (ADS)

    Weber, Charles

    2001-06-01

    This paper summarizes three studies of the semiconductor industry conducted at SEMATECH and MIT's Sloan School of Management. In conjunction they lead to the conclusion that rapid problem solving is an essential component of profitability in the semiconductor industry, and that metrology-based control is instrumental to rapid problem solving. The studies also identify the need for defect attribution. Once a source of a defect has been identified, the appropriate resources--human and technological--need to be brought into the physically optimal location for corrective action. The Internet is likely to enable effective defect attribution by inducing collaboration between different companies.

  4. Emission factors of air toxics from semiconductor manufacturing in Korea.

    PubMed

    Eom, Yun-Sung; Hong, Ji-Hyung; Lee, Suk-Jo; Lee, Eun-Jung; Cha, Jun-Seok; Lee, Dae-Gyun; Bang, Sun-Ae

    2006-11-01

    The development of local, accurate emission factors is very important for the estimation of reliable national emissions and air quality management. For that, this study is performed for pollutants released to the atmosphere with source-specific emission tests from the semiconductor manufacturing industry. The semiconductor manufacturing industry is one of the major sources of air toxics or hazardous air pollutants (HAPs); thus, understanding the emission characteristics of the emission source is a very important factor in the development of a control strategy. However, in Korea, there is a general lack of information available on air emissions from the semiconductor industry. The major emission sources of air toxics examined from the semiconductor manufacturing industry were wet chemical stations, coating applications, gaseous operations, photolithography, and miscellaneous devices in the wafer fabrication and semiconductor packaging processes. In this study, analyses of emission characteristics, and the estimations of emission data and factors for air toxics, such as acids, bases, heavy metals, and volatile organic compounds from the semiconductor manufacturing process have been performed. The concentration of hydrogen chloride from the packaging process was the highest among all of the processes. In addition, the emission factor of total volatile organic compounds (TVOCs) for the packaging process was higher than that of the wafer fabrication process. Emission factors estimated in this study were compared with those of Taiwan for evaluation, and they were found to be of similar level in the case of TVOCs and fluorine compounds.

  5. Pioneering University/Industry Venture Explores VLSI Frontiers.

    ERIC Educational Resources Information Center

    Davis, Dwight B.

    1983-01-01

    Discusses industry-sponsored programs in semiconductor research, focusing on Stanford University's Center for Integrated Systems (CIS). CIS, while pursuing research in semiconductor very-large-scale integration, is merging the fields of computer science, information science, and physical science. Issues related to these university/industry…

  6. The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers.

    PubMed

    Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun

    2009-04-01

    This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 microg/L).

  7. The simulation of air recirculation and fire/explosion phenomena within a semiconductor factory.

    PubMed

    I, Yet-Pole; Chiu, Yi-Long; Wu, Shi-Jen

    2009-04-30

    The semiconductor industry is the collection of capital-intensive firms that employ a variety of hazardous chemicals and engage in the design and fabrication of semiconductor devices. Owing to its processing characteristics, the fully confined structure of the fabrication area (fab) and the vertical airflow ventilation design restrict the applications of traditional consequence analysis techniques that are commonly used in other industries. The adverse situation also limits the advancement of a fire/explosion prevention design for the industry. In this research, a realistic model of a semiconductor factory with a fab, sub-fabrication area, supply air plenum, and return air plenum structures was constructed and the computational fluid dynamics algorithm was employed to simulate the possible fire/explosion range and its severity. The semiconductor factory has fan module units with high efficiency particulate air filters that can keep the airflow uniform within the cleanroom. This condition was modeled by 25 fans, three layers of porous ceiling, and one layer of porous floor. The obtained results predicted very well the real airflow pattern in the semiconductor factory. Different released gases, leak locations, and leak rates were applied to investigate their influence on the hazard range and severity. Common mitigation measures such as a water spray system and a pressure relief panel were also provided to study their potential effectiveness to relieve thermal radiation and overpressure hazards within a fab. The semiconductor industry can use this simulation procedure as a reference on how to implement a consequence analysis for a flammable gas release accident within an air recirculation cleanroom.

  8. Technician Training for the Semiconductor Microdevices Industry. Final Report.

    ERIC Educational Resources Information Center

    Center for Occupational Research and Development, Inc., Waco, TX.

    The Center for Occupational Research and Development (CORD) carried out four activities to foster semiconductor manufacturing technician (SMT) training: (1) collaboration with industry experts and educators while developing a curriculum to train SMTs; (2) implementation and testing of the curriculum at a technical college; (3) dissemination of…

  9. 15 CFR 700.15 - Extension of priority ratings.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ...) BUREAU OF INDUSTRY AND SECURITY, DEPARTMENT OF COMMERCE NATIONAL SECURITY INDUSTRIAL BASE REGULATIONS... receipt of a DO-A3 rated order for a navigation system and needs to purchase semiconductors for its manufacture, that person must use a DO-A3 rated order to obtain the needed semiconductors. (b) The priority...

  10. The Structuring of Shared Voluntary Standards in the U.S. Semiconductor Industry: Communicating to Reach Agreement.

    ERIC Educational Resources Information Center

    Browning, Larry D.; Beyer, Janice M.

    1998-01-01

    Contributes to scholarship on organizational communication by tracing how voluntary cooperative standards were developed for the semiconductor industry through reflexive communication processes initiated by the SEMATECH consortium. Analyzes seven pivotal incidents that show how increased communication produced new provinces of meaning, actions,…

  11. The United States digital recording industry

    NASA Technical Reports Server (NTRS)

    Simonds, John L.

    1993-01-01

    The recording industry resembles the semiconductor industry in several aspects. Both are large (greater than $60 Billion/year revenues); both are considered critical technologies supporting national objectives; both are experiencing increased competition from foreign suppliers; they recognize significant opportunities for both technological and market growth in the decade to come; and both realize that a key to this future growth lies in alliances among industry, academia, and government. The semiconductor industry has made significant investments in alliances relating to manufacturing technologies (SEMATECH) and to joint long-term technology research centered in universities (SRC). The federal government has provided funding support of these efforts in recognition of the critical roles semiconductor technologies play in national interests. The recording industry is now also forming critical alliances, but has been slower in starting and in gaining broad recognition by government agencies and legislators that the industry needs federal support. Traditionally, the recording industry has been viewed as mature, stable, and, while critical to national interests, able to chart and fund its own course toward future national needs. That perception is fortunately changing.

  12. Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials.

    PubMed

    Usman, Muhammad; Mendiratta, Shruti; Lu, Kuang-Lieh

    2017-02-01

    Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Exploring synchrotron radiation capabilities: The ALS-Intel CRADA

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gozzo, F.; Cossy-Favre, A; Trippleet, B.

    1997-04-01

    Synchrotron radiation spectroscopy and spectromicroscopy were applied, at the Advanced Light Source, to the analysis of materials and problems of interest to the commercial semiconductor industry. The authors discuss some of the results obtained at the ALS using existing capabilities, in particular the small spot ultra-ESCA instrument on beamline 7.0 and the AMS (Applied Material Science) endstation on beamline 9.3.2. The continuing trend towards smaller feature size and increased performance for semiconductor components has driven the semiconductor industry to invest in the development of sophisticated and complex instrumentation for the characterization of microstructures. Among the crucial milestones established by themore » Semiconductor Industry Association are the needs for high quality, defect free and extremely clean silicon wafers, very thin gate oxides, lithographies near 0.1 micron and advanced material interconnect structures. The requirements of future generations cannot be met with current industrial technologies. The purpose of the ALS-Intel CRADA (Cooperative Research And Development Agreement) is to explore, compare and improve the utility of synchrotron-based techniques for practical analysis of substrates of interest to semiconductor chip manufacturing. The first phase of the CRADA project consisted in exploring existing ALS capabilities and techniques on some problems of interest. Some of the preliminary results obtained on Intel samples are discussed here.« less

  14. Rare resource supply crisis and solution technology for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

    2016-03-01

    There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

  15. Electronics

    DTIC Science & Technology

    2001-01-01

    International Acer Incorporated, Hsin Chu, Taiwan Aerospace Industrial Development Corporation, Taichung, Taiwan American Institute of Taiwan, Taipei, Taiwan...Singapore and Malaysia .5 - 4 - The largest market for semiconductor products is the high technology consumer electronics industry that consumes up...Singapore, and Malaysia . A new semiconductor facility costs around $3 billion to build and takes about two years to become operational

  16. The Semiconductor Industry and Emerging Technologies: A Study Using a Modified Delphi Method

    ERIC Educational Resources Information Center

    Jordan, Edgar A.

    2010-01-01

    The purpose of this qualitative descriptive study was to determine what leaders in the semiconductor industry thought the future of computing would look like and what emerging materials showed the most promise to overcome the current theoretical limit of 10 nanometers for silicon dioxide. The researcher used a modified Delphi technique in two…

  17. Center for Semiconductor Materials and Device Modeling: expanding collaborative research opportunities between government, academia, and industry

    NASA Astrophysics Data System (ADS)

    Perconti, Philip; Bedair, Sarah S.; Bajaj, Jagmohan; Schuster, Jonathan; Reed, Meredith

    2016-09-01

    To increase Soldier readiness and enhance situational understanding in ever-changing and complex environments, there is a need for rapid development and deployment of Army technologies utilizing sensors, photonics, and electronics. Fundamental aspects of these technologies include the research and development of semiconductor materials and devices which are ubiquitous in numerous applications. Since many Army technologies are considered niche, there is a lack of significant industry investment in the fundamental research and understanding of semiconductor technologies relevant to the Army. To address this issue, the US Army Research Laboratory is establishing a Center for Semiconductor Materials and Device Modeling and seeks to leverage expertise and resources across academia, government and industry. Several key research areas—highlighted and addressed in this paper—have been identified by ARL and external partners and will be pursued in a collaborative fashion by this Center. This paper will also address the mechanisms by which the Center is being established and will operate.

  18. Technology Roadmaps for Compound Semiconductors

    PubMed Central

    Bennett, Herbert S.

    2000-01-01

    The roles cited for compound semiconductors in public versions of existing technology roadmaps from the National Electronics Manufacturing Initiative, Inc., Optoelectronics Industry Development Association, Microelectronics Advanced Research Initiative on Optoelectronic Interconnects, and Optoelectronics Industry and Technology Development Association (OITDA) are discussed and compared within the context of trends in the Si CMOS industry. In particular, the extent to which these technology roadmaps treat compound semiconductors at the materials processing and device levels will be presented for specific applications. For example, OITDA’s Optical Communications Technology Roadmap directly connects the information demand of delivering 100 Mbit/s to the home to the requirement of producing 200 GHz heterojunction bipolar transistors with 30 nm bases and InP high electron mobility transistors with 100 nm gates. Some general actions for progress towards the proposed International Technology Roadmap for Compound Semiconductors (ITRCS) and methods for determining the value of an ITRCS will be suggested. But, in the final analysis, the value added by an ITRCS will depend on how industry leaders respond. The technical challenges and economic opportunities of delivering high quality digital video to consumers provide concrete examples of where the above actions and methods could be applied. PMID:27551615

  19. neutron-Induced Failures in semiconductor Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wender, Stephen Arthur

    2017-03-13

    Single Event Effects are a very significant failure mode in modern semiconductor devices that may limit their reliability. Accelerated testing is important for semiconductor industry. Considerable more work is needed in this field to mitigate the problem. Mitigation of this problem will probably come from Physicists and Electrical Engineers working together

  20. 76 FR 14688 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-03-17

    ... Integrated Circuit Semiconductor Chips and Products Containing the Same; Notice of a Commission Determination... certain large scale integrated circuit semiconductor chips and products containing same by reason of... existence of a domestic industry. The Commission's notice of investigation named several respondents...

  1. 77 FR 25747 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Institution of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-01

    ... INTERNATIONAL TRADE COMMISSION [Inv. No. 337-TA-840] Certain Semiconductor Integrated Circuit... States after importation of certain semiconductor integrated circuit devices and products containing same... No. 6,847,904 (``the '904 patent''). The complaint further alleges that an industry in the United...

  2. Sensors for process control Focus Team report

    NASA Astrophysics Data System (ADS)

    At the Semiconductor Technology Workshop, held in November 1992, the Semiconductor Industry Association (SIA) convened 179 semiconductor technology experts to assess the 15-year outlook for the semiconductor manufacturing industry. The output of the Workshop, a document entitled 'Semiconductor Technology: Workshop Working Group Reports,' contained an overall roadmap for the technology characteristics envisioned in integrated circuits (IC's) for the period 1992-2007. In addition, the document contained individual roadmaps for numerous key areas in IC manufacturing, such as film deposition, thermal processing, manufacturing systems, exposure technology, etc. The SIA Report did not contain a separate roadmap for contamination free manufacturing (CFM). A key component of CFM for the next 15 years is the use of sensors for (1) defect reduction, (2) improved product quality, (3) improved yield, (4) improved tool utilization through contamination reduction, and (5) real time process control in semiconductor fabrication. The objective of this Focus Team is to generate a Sensors for Process Control Roadmap. Implicit in this objective is the identification of gaps in current sensor technology so that research and development activity in the sensor industry can be stimulated to develop sensor systems capable of meeting the projected roadmap needs. Sensor performance features of interest include detection limit, specificity, sensitivity, ease of installation and maintenance, range, response time, accuracy, precision, ease and frequency of calibration, degree of automation, and adaptability to in-line process control applications.

  3. 75 FR 76023 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-12-07

    ... Certain Semiconductor Chips and Products Containing Same, DN 2771; the Commission is soliciting comments... semiconductor chips and products containing same The complaint names as respondents Freescale Semiconductor, Inc... Microtech (U.S.A.) Corp. of City of Industry, CA; Biostar Microtech International Corp. of Hsin Tien, Taiwan...

  4. 75 FR 24742 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-05-05

    ... Integrated Circuit Semiconductor Chips and Products Containing Same; Notice of Investigation AGENCY: U.S... of certain large scale integrated circuit semiconductor chips and products containing same by reason... alleges that an industry in the United States exists as required by subsection (a)(2) of section 337. The...

  5. 75 FR 5804 - In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-04

    ... Semiconductor Integrated Circuits and Products Containing Same; Notice of Commission Determination To Review in... importation of certain semiconductor integrated circuits and products containing same by reason of... that there exists a domestic industry with respect to each of the asserted patents. The complaint named...

  6. Cancer mortality among US workers employed in semiconductor wafer fabrication.

    PubMed

    Boice, John D; Marano, Donald E; Munro, Heather M; Chadda, Bandana K; Signorello, Lisa B; Tarone, Robert E; Blot, William J; McLaughlin, Joseph K

    2010-11-01

    To evaluate potential cancer risks in the US semiconductor wafer fabrication industry. A cohort of 100,081 semiconductor workers employed between 1968 and 2002 was studied. Standardized mortality ratios and relative risks (RRs) were estimated. Standardized mortality ratios were similar and significantly low among fabrication and nonfabrication workers for all causes (0.54 and 0.54) and all cancers (0.74 and 0.72). Internal comparisons also showed similar overall cancer risks among fabrication workers (RR = 0.98), including process equipment operators and process equipment service technicians (OP/EST) employed in cleanrooms (RR = 0.97), compared with nonfabrication workers. Nonsignificantly elevated RRs were observed for a few cancer sites among OP/EST workers, but the numbers of deaths were small and there were no trends of increasing risk with duration of employment. Work in the US semiconductor industry, including semiconductor wafer fabrication in cleanrooms, was not associated with increased cancer mortality overall or mortality from any specific form of cancer. However, due to the young average age of this cohort and its associated relatively low numbers of deaths, regular mortality updates of this semiconductor worker cohort are warranted.

  7. European semiconductor industry: Markets, government programs

    NASA Astrophysics Data System (ADS)

    Scharf, A.

    1983-01-01

    The marketing of the semiconductor industry in Europe and especially microelectronics which is situated between the millstones of USA and Japan is discussed. The concerned enterprises and governments appear to lack the motivation for close cooperation using European resources, corresponding to the ideas of the contracts on which the common market is based. It is felt that microelectronics is promoted in individual countries under more national perspectives, and the enterprises are pursuing strictly their own interests in cooperating with predominantly American and Japanese partners. An insight into the European semiconductor scene, its markets, as well as assistance for promotion and establishment available in the individual countries is discussed.

  8. The FinFET Breakthrough and Networks of Innovation in the Semiconductor Industry, 1980-2005: Applying Digital Tools to the History of Technology.

    PubMed

    O'Reagan, Douglas; Fleming, Lee

    2018-01-01

    The "FinFET" design for transistors, developed at the University of California, Berkeley, in the 1990s, represented a major leap forward in the semiconductor industry. Understanding its origins and importance requires deep knowledge of local factors, such as the relationships among the lab's principal investigators, students, staff, and the institution. It also requires understanding this lab within the broader network of relationships that comprise the semiconductor industry-a much more difficult task using traditional historical methods, due to the paucity of sources on industrial research. This article is simultaneously 1) a history of an impactful technology and its social context, 2) an experiment in using data tools and visualizations as a complement to archival and oral history sources, to clarify and explore these "big picture" dimensions, and 3) an introduction to specific data visualization tools that we hope will be useful to historians of technology more generally.

  9. National Manufacturing Strategy: Is a National Manufacturing Strategy Essential to National Security?

    DTIC Science & Technology

    2011-05-01

    cycle found nearly a quarter of all homeowners owning more than their home was worth. 11 Both Paul Volcker and Warren Buffet arrived at similar...November 15, 2010; Warren Buffet , Testimony, Financial Crisis Inquiry Commission, June 2, 2010; “Subprime Mortgage Crisis,” http://en.wikipedia.org...overseas manufacturing. Case Study: Semiconductor Wafer Industry. The history of the semiconductor industry is an instructive account . It begins with

  10. Synthesis of a Nano-Silver Metal Ink for Use in Thick Conductive Film Fabrication Applied on a Semiconductor Package

    PubMed Central

    Yung, Lai Chin; Fei, Cheong Choke; Mandeep, JS; Binti Abdullah, Huda; Wee, Lai Khin

    2014-01-01

    The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail. PMID:24830317

  11. Synthesis of a nano-silver metal ink for use in thick conductive film fabrication applied on a semiconductor package.

    PubMed

    Yung, Lai Chin; Fei, Cheong Choke; Mandeep, Js; Binti Abdullah, Huda; Wee, Lai Khin

    2014-01-01

    The success of printing technology in the electronics industry primarily depends on the availability of metal printing ink. Various types of commercially available metal ink are widely used in different industries such as the solar cell, radio frequency identification (RFID) and light emitting diode (LED) industries, with limited usage in semiconductor packaging. The use of printed ink in semiconductor IC packaging is limited by several factors such as poor electrical performance and mechanical strength. Poor adhesion of the printed metal track to the epoxy molding compound is another critical factor that has caused a decline in interest in the application of printing technology to the semiconductor industry. In this study, two different groups of adhesion promoters, based on metal and polymer groups, were used to promote adhesion between the printed ink and the epoxy molding substrate. The experimental data show that silver ink with a metal oxide adhesion promoter adheres better than silver ink with a polymer adhesion promoter. This result can be explained by the hydroxyl bonding between the metal oxide promoter and the silane grouping agent on the epoxy substrate, which contributes a greater adhesion strength compared to the polymer adhesion promoter. Hypotheses of the physical and chemical functions of both adhesion promoters are described in detail.

  12. 75 FR 8765 - Self-Regulatory Organizations; NASDAQ OMX PHLX, Inc.; Notice of Filing of Proposed Rule Change To...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-25

    ...-growing (yet extremely volatile) semiconductor industry. When investors want information and investment... Number of Components in the PHLX Semiconductor Sector\\SM\\ Known as SOX\\SM\\, on Which Options Are Listed... Commission a proposal to expand the number of components in the PHLX Semiconductor Sector\\SM\\ known as SOX\\SM...

  13. 75 FR 51843 - In the Matter of Certain Large Scale Integrated Circuit Semiconductor Chips and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-23

    ... Integrated Circuit Semiconductor Chips and Products Containing the Same; Notice of Commission Decision Not To... semiconductor chips and products containing same by reason of infringement of certain claims of U.S. Patent Nos. 5,933,364 and 6,834,336. The complaint further alleges the existence of a domestic industry. The...

  14. REDUCTION OF ARSENIC WASTES IN THE SEMICONDUCTOR INDUSTRY

    EPA Science Inventory

    The research described in this report was aimed at initiating and developing processes and process modifications that could be incorporated into semiconductor manufacturing operations to accomplish pollution prevention, especially to accomplish significant reduction in the quanti...

  15. The relationship between spontaneous abortion and female workers in the semiconductor industry.

    PubMed

    Kim, Heechan; Kwon, Ho-Jang; Rhie, Jeongbae; Lim, Sinye; Kang, Yun-Dan; Eom, Sang-Yong; Lim, Hyungryul; Myong, Jun-Pyo; Roh, Sangchul

    2017-01-01

    This study investigated the relationship between job type and the risk for spontaneous abortion to assess the reproductive toxicity of female workers in the semiconductor industry. A questionnaire survey was administered to current female workers of two semiconductor manufacturing plants in Korea. We included female workers who became pregnant at least 6 months after the start of their employment with the company. The pregnancy outcomes of 2,242 female workers who experienced 4,037 pregnancies were investigated. Personnel records were used to assign the subjects to one of three groups: fabrication process workers, packaging process workers, and clerical workers. To adjust for within-person correlations between pregnancies, a generalized estimating equation was used. The logistic regression analysis was limited to the first pregnancy after joining the company to satisfy the assumption of independence among pregnancies. Moreover, we stratified the analysis by time period (pregnancy in the years prior to 2008 vs. after 2009) to reflect differences in occupational exposure based on semiconductor production periods. The risk for spontaneous abortion in female semiconductor workers was not significantly higher for fabrication and packaging process workers than for clerical workers. However, when we stratified by time period, the odds ratio for spontaneous abortion was significantly higher for packaging process workers who became pregnant prior to 2008 when compared with clerical workers (odds ratio: 2.21; 95% confidence interval: 1.01-4.81). When examining the pregnancies of female semiconductor workers that occurred prior to 2008, packaging process workers showed a significantly higher risk for spontaneous abortions than did clerical workers. The two semiconductor production periods in our study (prior to 2008 vs. after 2009) had different automated processes, chemical exposure levels, and working environments. Thus, the conditions prior to 2008 may have increased the risk for spontaneous abortions in packaging process workers in the semiconductor industry.

  16. Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R.; Lutwack, R.; Lorenz, J. H.; Pellin, R.

    1984-01-01

    Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

  17. Adsorption of Heavy Metals in Industrial Wastewater by Magnetic Nano-particles

    NASA Astrophysics Data System (ADS)

    Tu, Y.; You, C.

    2010-12-01

    Industrial wastewater containing heavy metals is of great concern because of their toxic impact to living species and environments. Removal of metal ions from industrial effluent using nano-particles is an area of extensive research. This study collected wastewaters and effluents from 11 industrial companies in tanning, electronic plating, printed circuit board manufacturing, semi-conductor, and metal surface treatment industry and studied in detailed the major and trace element compositions to develop potential fingerprinting technique for pollutant source identification. The results showed that electronic plating and metal surface treatment industry produce high Fe, Mn, Cr, Zn, Ni and Mo wastewater. The tanning industry and the printed circuit board manufacturing industry released wastewater with high Fe and Cr, Cu and Ni, respectively. For semi-conductor industry, significant dissolved In was detected in wastewater. The absorption experiments to remove heavy metals in waters were conducted using Fe3O4 nano-particles. Under optimal conditions, more than 99 % dissolved metals were removed in a few minutes.

  18. Protons, Aerospace, and Electronics: A National Interest

    NASA Technical Reports Server (NTRS)

    Label, Kenneth A.; Turflinger, Thomas L.

    2017-01-01

    The aerospace and semiconductor industries lost 2000 hours annually of research access when IUCF closed. An ad hoc team between the U.S. government and industry was formed to evaluate other facility options. In this presentation, we will discuss: 1) Why aerospace, semiconductor manufacturers, and others are interested in proton facility access, as well as, 2) Some of the basics of a typical test for electronics, and 3) We'll conclude with the brief current status on progress.

  19. Protons, Aerospace, and Electronics: A National Interest

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Turflinger, Thomas L.

    2018-01-01

    The aerospace and semiconductor industries lost approximately 2000 hours annually of research access when IUCF closed. An ad hoc team between the U.S. government and industry was formed to evaluate other facility options. In this presentation, we will discuss: 1) Why aerospace, semiconductor manufacturers, and others are interested in proton facility access, as well as, 2) Some of the basics of a typical tests for electronics, and 3) We'll conclude with the brief current status on progress.

  20. Protons, Aerospace, and Electronics: A National Interest

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Turflinger, Thomas L.

    2018-01-01

    The aerospace and semiconductor industries lost approx. 2000 hours annually of research access when IUCF closed. An ad hoc team between the U.S. government and industry was formed to evaluate other facility options. In this presentation, we will discuss: 1) Why aerospace, semiconductor manufacturers, and others are interested in proton facility access, as well as, 2) Some of the basics of a typical test for electronics, and 3) We"ll conclude with the brief current status on progress.

  1. 77 FR 24178 - Information Systems Technical Advisory Committee; Notice of Partially Closed Meeting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-04-23

    ... and Introductions 2. Working Group Reports 3. Industry Presentation: E-beam Lithography 4. Industry Presentation: ENC Threshold for Satellite Modem 5. Industry Presentation: Semiconductor Manufacturing Equipment... DEPARTMENT OF COMMERCE Bureau of Industry and Security Information Systems Technical Advisory...

  2. Semiconductor chips, genes, and stem cells: new wine for new bottles?

    PubMed

    Rose, Simone A

    2012-01-01

    This Article analogizes early semiconductor technology and its surrounding economics with isolated genes, stem cells, and related bioproducts, and their surrounding economics, to make the case for sui generis (of its own class) intellectual property protection for isolated bioproducts. Just as early semiconductors failed to meet the patent social bargain requiring novelty and non-obviousness in the 1980s, isolated genes and stem cells currently fail to meet the patent bargain requirements of non-obviousness and eligible subject matter that entitle them to traditional intellectual property protection. Like early semiconductor chip designs, nevertheless, the high cost of upstream bioproduct research and development, coupled with the need to sustain continued economic growth of the biotechnology industry, mandates that Congress provide some level of exclusive rights to ensure continued funding for this research. Sui generis intellectual property protection for isolated bioproducts would preserve the incentive to continue innovation in the field. As illustrated by the semiconductor industry, however, such sui generis protection for this technology must include limitations that address the need to provide an appropriate level of public access to facilitate downstream product development and enrich the public domain.

  3. A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

    PubMed

    Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

    2014-12-23

    An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    NASA Technical Reports Server (NTRS)

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  5. The Computer Industry. High Technology Industries: Profiles and Outlooks.

    ERIC Educational Resources Information Center

    International Trade Administration (DOC), Washington, DC.

    A series of meetings was held to assess future problems in United States high technology, particularly in the fields of robotics, computers, semiconductors, and telecommunications. This report, which focuses on the computer industry, includes a profile of this industry and the papers presented by industry speakers during the meetings. The profile…

  6. Product manufacturing, quality, and reliability initiatives to maintain a competitive advantage and meet customer expectations in the semiconductor industry

    NASA Astrophysics Data System (ADS)

    Capps, Gregory

    Semiconductor products are manufactured and consumed across the world. The semiconductor industry is constantly striving to manufacture products with greater performance, improved efficiency, less energy consumption, smaller feature sizes, thinner gate oxides, and faster speeds. Customers have pushed towards zero defects and require a more reliable, higher quality product than ever before. Manufacturers are required to improve yields, reduce operating costs, and increase revenue to maintain a competitive advantage. Opportunities exist for integrated circuit (IC) customers and manufacturers to work together and independently to reduce costs, eliminate waste, reduce defects, reduce warranty returns, and improve quality. This project focuses on electrical over-stress (EOS) and re-test okay (RTOK), two top failure return mechanisms, which both make great defect reduction opportunities in customer-manufacturer relationship. Proactive continuous improvement initiatives and methodologies are addressed with emphasis on product life cycle, manufacturing processes, test, statistical process control (SPC), industry best practices, customer education, and customer-manufacturer interaction.

  7. Distribution of volatile organic compounds over a semiconductor Industrial Park in Taiwan.

    PubMed

    Chiu, Kong-Hwa; Wu, Ben-Zen; Chang, Chih-Chung; Sree, Usha; Lo, Jiunn-Guang

    2005-02-15

    This study examined volatile organic compounds (VOC) concentration in ambient air collected during the years 2000--2003 at several different locations of Hsinchu Science-based Industrial Park (HSIP) in Taiwan. A canister automated GC-MS system analyzed the volatile organics in ambient air grasp samples according to T0-15 method. Oxygenated volatiles were the most abundant VOC detected in HSIP followed by aromatics that are commonly used as solvents in the semiconductor industries. The major components measured in the ambient air are 2-propanol (29-135 ppbv), acetone (12-164 ppbv), benzene (0.7-1.7 ppbv), and toluene (13-20 ppbv). At some of the sampling locations, odorous compounds such as carbon disulfide and dimethyl sulfide levels exceed threshold values. The estimated toluene/benzene ratio is very high at most of the sites. However, the total amount of VOC is reduced over the years from 2000 to 2003 due to strict implementation on use and discharge of solvents in industries. There exists no definite seasonal pattern for sporadic occurrence of high levels of some of the volatile organics. Stagnant weather conditions with low wind speeds aid accumulation of toxic species at ground level. The results entail that hi-tech semiconductor industries are still a potential source for harmful organic substances to surrounding microenvironment.

  8. Spontaneous abortion in the British semiconductor industry: An HSE investigation. Health and Safety Executive.

    PubMed

    Elliott, R C; Jones, J R; McElvenny, D M; Pennington, M J; Northage, C; Clegg, T A; Clarke, S D; Hodgson, J T; Osman, J

    1999-11-01

    The UK Health and Safety Executive (HSE) conducted a study to examine the risk of spontaneous abortion (SAB) in British female semiconductor industry workers, following reports from the USA which suggested an association between risk of SAB and work in fabrication rooms and/or exposure to ethylene glycol ethers. A nested case-control study based on 2,207 women who had worked at eight manufacturing sites during a 5-year retrospective time frame was established; 36 cases were matched with 80 controls. The overall SAB rate in the industry was 10.0%. (65 SABs/651 pregnancies) The crude odds ratio (OR) for fabrication work was 0.65 (95% CI 0.30-1.40). This was essentially unchanged after adjustment for a range of potential confounding factors in the first 3 months of pregnancy and was reduced to 0.58 (95% CI 0.26-1.30) after adjustment for smoking in the previous 12 months. There were no statistically significantly elevated ORs for any work group or any specific chemical or physical exposure in the industry. There is no evidence of an increased risk of SAB in the British semiconductor industry. Am. J. Ind. Med. 36:557-572, 1999. Published 1999 Wiley-Liss, Inc.

  9. General Industrial Electronics. Oklahoma Trade and Industrial Education.

    ERIC Educational Resources Information Center

    Harwick, Jim; Siebert, Leo

    This curriculum guide, part of a series of curriculum guides dealing with industrial electricity and electronics, is designed for use in teaching a course in general industrial electronics. Covered in the first half of the guide are units on the following electronic components: semiconductors, solid-state diodes, bipolar transistors, and special…

  10. Rhenium ion beam for implantation into semiconductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kulevoy, T. V.; Seleznev, D. N.; Alyoshin, M. E.

    2012-02-15

    At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics andmore » nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.« less

  11. A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell.

    PubMed

    Toumazou, Christofer; Thay, Tan Sri Lim Kok; Georgiou, Pantelis

    2014-03-28

    Semiconductor genetics is now disrupting the field of healthcare owing to the rapid parallelization and scaling of DNA sensing using ion-sensitive field-effect transistors (ISFETs) fabricated using commercial complementary metal -oxide semiconductor technology. The enabling concept of DNA reaction monitoring introduced by Toumazou has made this a reality and we are now seeing relentless scaling with Moore's law ultimately achieving the $100 genome. In this paper, we present the next evolution of this technology through the creation of the gene-sensitive integrated cell (GSIC) for label-free real-time analysis based on ISFETs. This device is derived from the traditional metal-oxide semiconductor field-effect transistor (MOSFET) and has electrical performance identical to that of a MOSFET in a standard semiconductor process, yet is capable of incorporating DNA reaction chemistries for applications in single nucleotide polymorphism microarrays and DNA sequencing. Just as application-specific integrated circuits, which are developed in much the same way, have shaped our consumer electronics industry and modern communications and memory technology, so, too, do GSICs based on a single underlying technology principle have the capacity to transform the life science and healthcare industries.

  12. Foundational Forces & Hidden Variables in Technology Commercialization

    NASA Astrophysics Data System (ADS)

    Barnett, Brandon

    2011-03-01

    The science of physics seems vastly different from the process of technology commercialization. Physics strives to understand our world through the experimental deduction of immutable laws and dependent variables and the resulting macro-scale phenomenon. In comparison, the~goal of business is to make a profit by addressing the needs, preferences, and whims of individuals in a market. It may seem that this environment is too dynamic to identify all the hidden variables and deduct the foundational forces that impact a business's ability to commercialize innovative technologies. One example of a business ``force'' is found in the semiconductor industry. In 1965, Intel co-founder Gordon Moore predicted that the number of transistors incorporated in a chip will approximately double every 24 months. Known as Moore's Law, this prediction has become the guiding principle for the semiconductor industry for the last 40 years. Of course, Moore's Law is not really a law of nature; rather it is the result of efforts by Intel and the entire semiconductor industry. A closer examination suggests that there are foundational principles of business that underlie the macro-scale phenomenon of Moore's Law. Principles of profitability, incentive, and strategic alignment have resulted in a coordinated influx of resources that has driven technologies to market, increasing the profitability of the semiconductor industry and optimizing the fitness of its participants. New innovations in technology are subject to these same principles. So, in addition to traditional market forces, these often unrecognized forces and variables create challenges for new technology commercialization. In this talk, I will draw from ethnographic research, complex adaptive theory, and industry data to suggest a framework with which to think about new technology commercialization. Intel's bio-silicon initiative provides a case study.

  13. SIMULTANEOUS WATER CONSERVATION/RECYCLING/REUSE AND WASTE REDUCTION IN SEMICONDUCTOR MANUFACTURING

    EPA Science Inventory

    The project was devoted to two separate arms of research.  The overall goals of this research was to reduce the water use in the semi-conductor industry through a comprehensive program to reduce water usage in manufacturing processes, to investigate opportunitie...

  14. Integrating Asynchronous Digital Design Into the Computer Engineering Curriculum

    ERIC Educational Resources Information Center

    Smith, S. C.; Al-Assadi, W. K.; Di, J.

    2010-01-01

    As demand increases for circuits with higher performance, higher complexity, and decreased feature size, asynchronous (clockless) paradigms will become more widely used in the semiconductor industry, as evidenced by the International Technology Roadmap for Semiconductors' (ITRS) prediction of a likely shift from synchronous to asynchronous design…

  15. Plasma Properties of an Exploding Semiconductor Igniter

    NASA Astrophysics Data System (ADS)

    McGuirk, J. S.; Thomas, K. A.; Shaffer, E.; Malone, A. L.; Baginski, T.; Baginski, M. E.

    1997-11-01

    Requirements by the automotive industry for low-cost, pyrotechnic igniters for automotive airbags have led to the development of several semiconductor devices. The properties of the plasma produced by the vaporization of an exploding semiconductor are necessary in order to minimize the electrical energy requirements. This work considers two silicon-based semiconductor devices: the semiconductor bridge (SCB) and the semiconductor junction igniter both consisting of etched silicon with vapor deposited aluminum structures. Electrical current passing through the device heats a narrow junction region to the point of vaporization creating an aluminum and silicon low-temperature plasma. This work will investigate the electrical characteristics of both devices and infer the plasma properties. Furthermore optical spectral measurements will be taken of the exploding devices to estimate the temperature and density of the plasma.

  16. 75 FR 62462 - Additions to the List of Validated End-Users in the People's Republic of China: Hynix...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-10-12

    ...In this final rule, the Bureau of Industry and Security amends the Export Administration Regulations (EAR) to add three end-users, Hynix Semiconductor (China) Ltd., Hynix Semiconductor (Wuxi) Ltd. and Lam Research Corporation to the list of validated end-users in the People's Republic of China (PRC). With this rule, exports, reexports and transfers (in-country) of certain items to one facility of Hynix Semiconductor (China) Ltd., one facility of Hynix Semiconductor (Wuxi) Ltd. and nine facilities of Lam Research Corporation in the PRC are now authorized under Authorization Validated End-User (VEU).

  17. Introduction to Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  18. Roadmap evolution: from NTRS to ITRS, from ITRS 2.0 to IRDS

    NASA Astrophysics Data System (ADS)

    Gargini, Paolo A.

    2017-10-01

    The semiconductor industry benefitted from roadmap guidance since the mid-60s. The roadmap anticipated and outlined the main needs of the semiconductor industry for years to come and identified future challenges and possible solutions. Making transistor smaller by means of advanced lithographic technologies enabled both increased integration levels and improved IC performance. The roadmap methodology allowed the removal of multiple "red brick walls". The NTRS and the ITRS constituted primarily a "bottom up" approach as standard microprocessors and memories where introduced at a blistering pace barely allowing time for system houses to integrate them in their products. The 1998 ITRS provided the vision that triggered research, development and manufacturing communities to develop a completely new transistor structure in addition to replacing aluminum interconnects with a more advanced technology. The advent of Foundries and Fabless companies transformed the electronics industry into a "top down" driven industry in the past 15 years. The ITRS adjusted to this new ecosystem and morphed into the International Roadmap for Devices and Systems (IRDS) sponsored by IEEE. The IRDS is addressing the requirements and needs of the renewed electronics industry. Furthermore, by the middle of the next decade the ability to layout integrated circuits in a 2D geometry grid will reach fundamental physical limits and the aggressive conversion to 3D architecture for integrated circuit must be pursued across the board as an avenue to continuously increasing transistor count and improving performance. EUV technology is finally approaching the manufacturing stage but with the advent of 3D monolithically integrated heterogeneous circuits approaching in the not-toodistant future should the semiconductor industry concentrate its resources on the next lithographic technology generation in order to enhance resolution or on providing a smooth transition to the new revolutionary 3D architecture of integrated circuits? It is essential for the whole semiconductor industry to come together and make fundamental choices leading to a cooperative and synchronized allocation of adequate resources to produce viable solutions that once introduced in a timely manner into manufacturing will enable the continuation of the growth of the electronic industry at a pace comparable or exceeding historical trends.

  19. Semiconductor Research Corporation: A Case Study in Cooperative Innovation Partnerships

    ERIC Educational Resources Information Center

    Logar, Nathaniel; Anadon, Laura Diaz; Narayanamurti, Venkatesh

    2014-01-01

    In the study of innovation institutions, it is important to consider how different institutional models can affect a research organization in conducting or funding successful work. As an industry collaborative, Semiconductor Research Corporation (SRC) provides an example of a privately funded institution that leverages the inputs of several member…

  20. 78 FR 28628 - Notice of Determinations Regarding Eligibility To Apply for Worker Adjustment Assistance

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-05-15

    ... identified by name by the International Trade Commission as a member of a domestic industry in an... date 82,509 Hemlock Semiconductor Corporation, Hemlock, MI......... February 27, 2012. Dow Corning Corporation, Adecco, Qualified Staffing, SimplexGrennell LP. 82,509A Hemlock Semiconductor LLC, Dow...

  1. 77 FR 65878 - Application for Final Commitment for a Long-term Loan or Financial Guarantee in Excess of $100...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-10-31

    ... export of semiconductor manufacturing equipment to Germany. Brief non-proprietary description of the anticipated use of the items being exported: Equipment supports the manufacture of logic semiconductors. To... United States industry. Parties: Principal Suppliers: Applied Materials, Inc., KLA-Tencor Corporation...

  2. Implications of Analytical Investigations about the Semiconductor Equations on Device Modeling Programs.

    DTIC Science & Technology

    1983-04-01

    34.. .. . ...- "- -,-. SIGNIFICANCE AND EXPLANATION Many different codes for the simulation of semiconductor devices such as transitors , diodes, thyristors are already circulated...partially take into account the consequences introduced by degenerate semiconductors (e.g. invalidity of Boltzmann’s statistics , bandgap narrowing). These...ft - ni p nep /Ut(2.10) Sni *e p nie 2.11) .7. (2.10) can be physically interpreted as the application of Boltzmann statistics . However (2.10) a.,zo

  3. Developments in optical modeling methods for metrology

    NASA Astrophysics Data System (ADS)

    Davidson, Mark P.

    1999-06-01

    Despite the fact that in recent years the scanning electron microscope has come to dominate the linewidth measurement application for wafer manufacturing, there are still many applications for optical metrology and alignment. These include mask metrology, stepper alignment, and overlay metrology. Most advanced non-optical lithographic technologies are also considering using topics for alignment. In addition, there have been a number of in-situ technologies proposed which use optical measurements to control one aspect or another of the semiconductor process. So optics is definitely not dying out in the semiconductor industry. In this paper a description of recent advances in optical metrology and alignment modeling is presented. The theory of high numerical aperture image simulation for partially coherent illumination is discussed. The implications of telecentric optics on the image simulation is also presented. Reciprocity tests are proposed as an important measure of numerical accuracy. Diffraction efficiencies for chrome gratings on reticles are one good way to test Kirchoff's approximation as compared to rigorous calculations. We find significant differences between the predictions of Kirchoff's approximation and rigorous methods. The methods for simulating brightfield, confocal, and coherence probe microscope imags are outlined, as are methods for describing aberrations such as coma, spherical aberration, and illumination aperture decentering.

  4. Workplace Safety and Health Topics: Industries and Occupations

    MedlinePlus

    ... Workplace Exposure Control Nanotechnology Occupational Health Psychology Office Environment and Worker Safety and Health Outdoor Workers Poultry Industry Workers Productive Aging and Work Safe, Green, and Sustainable Construction Semiconductor Manufacturing Small Business ...

  5. Atmospheric Nitrogen Trifluoride: Optimized emission estimates using 2-D and 3-D Chemical Transport Models from 1973-2008

    NASA Astrophysics Data System (ADS)

    Ivy, D. J.; Rigby, M. L.; Prinn, R. G.; Muhle, J.; Weiss, R. F.

    2009-12-01

    We present optimized annual global emissions from 1973-2008 of nitrogen trifluoride (NF3), a powerful greenhouse gas which is not currently regulated by the Kyoto Protocol. In the past few decades, NF3 production has dramatically increased due to its usage in the semiconductor industry. Emissions were estimated through the 'pulse-method' discrete Kalman filter using both a simple, flexible 2-D 12-box model used in the Advanced Global Atmospheric Gases Experiment (AGAGE) network and the Model for Ozone and Related Tracers (MOZART v4.5), a full 3-D atmospheric chemistry model. No official audited reports of industrial NF3 emissions are available, and with limited information on production, a priori emissions were estimated using both a bottom-up and top-down approach with two different spatial patterns based on semiconductor perfluorocarbon (PFC) emissions from the Emission Database for Global Atmospheric Research (EDGAR v3.2) and Semiconductor Industry Association sales information. Both spatial patterns used in the models gave consistent results, showing the robustness of the estimated global emissions. Differences between estimates using the 2-D and 3-D models can be attributed to transport rates and resolution differences. Additionally, new NF3 industry production and market information is presented. Emission estimates from both the 2-D and 3-D models suggest that either the assumed industry release rate of NF3 or industry production information is still underestimated.

  6. Industry Studies of Wage Inequality. Extra Issue.

    ERIC Educational Resources Information Center

    Industrial and Labor Relations Review, 2001

    2001-01-01

    The seven papers use data from particular industries to examine the nature and causes of recent changes in earnings equality in the United States. They provide perspectives from banking, telecommunications, semiconductors, steel, grocery, truck driving, apparel, and imaging industries on recent debates regarding the influence that technological…

  7. Reporting of occupational injury and illness in the semiconductor manufacturing industry.

    PubMed

    McCurdy, S A; Schenker, M B; Samuels, S J

    1991-01-01

    In the United States, occupational illness and injury cases meeting specific reporting criteria are recorded on company Occupational Safety and Health Administration (OSHA) 200 logs; case description data are submitted to participating state agencies for coding and entry in the national Supplementary Data System (SDS). We evaluated completeness of reporting (the percentage of reportable cases that were recorded in the company OSHA 200 log) in the semiconductor manufacturing industry by reviewing company health clinic records for 1984 of 10 manufacturing sites of member companies of a national semiconductor manufacturing industry trade association. Of 416 randomly selected work-related cases, 101 met OSHA reporting criteria. Reporting completeness was 60 percent and was lowest for occupational illnesses (44 percent). Case-description data from 150 reported cases were submitted twice to state coding personnel to evaluate coding reliability. Reliability was high (kappa 0.82-0.93) for "nature," "affected body part," "source," and "type" variables. Coding for the SDS appears reliable; reporting completeness may be improved by use of a stepwise approach by company personnel responsible for reporting decisions.

  8. Mask strategy at International SEMATECH

    NASA Astrophysics Data System (ADS)

    Kimmel, Kurt R.

    2002-08-01

    International SEMATECH (ISMT) is a consortium consisting of 13 leading semiconductor manufacturers from around the globe. Its objective is to develop the infrastructure necessary for its member companies to realize the International Technology Roadmap for Semiconductors (ITRS) through efficiencies of shared development resources and knowledge. The largest area of effort is lithography, recognized as a crucial enabler for microelectronics technology progress. Within the Lithography Division, most of the efforts center on mask-related issues. The development strategy at International SEMATCH will be presented and the interlock of lithography projects clarified. Because of the limited size of the mask production equipment market, the business case is weak for aggressive investment commensurate with the pace of the International Technology Roadmap for Semiconductors. With masks becoming the overwhelming component of lithography cost, new ways of reducing or eliminating mask costs are being explored. Will mask technology survive without a strong business case? Will the mask industry limit the growth of the semiconductor industry? Are advanced masks worth their escalating cost? An analysis of mask cost from the perspective of mask value imparted to the user is presented with examples and generic formulas for the reader to apply independently. A key part to the success for both International SEMATECH and the industry globally will be partnerships on both the local level between mask-maker and mask-user, and the macro level where global collaborations will be necessary to resolve technology development cost challenges.

  9. 19 CFR 12.39 - Imported articles involving unfair methods of competition or practices.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... economically operated United States industry, or to restrain or monopolize trade and commerce in the United... the authorization or consent of the Government. (e) Importations of semiconductor chip products. (1) In accordance with the Semiconductor Chip Protection Act of 1984 (17 U.S.C. 901 et seq.), if the...

  10. 75 FR 73131 - Innovion Corporation, Gresham, OR; Notice of Negative Determination on Reconsideration

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-11-29

    ... in the semiconductor industry. The initial investigation resulted in a negative determination based... a member of a domestic industry injured under a provision of the Tariff Act of 1930 [Section 222(f...

  11. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors.

    PubMed

    Fluegel, Brian; Mialitsin, Aleksej V; Beaton, Daniel A; Reno, John L; Mascarenhas, Angelo

    2015-05-28

    Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10(-4). Comparing our strain sensitivity and signal strength in Al(x)Ga(1-x)As with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10(3), thus obviating key constraints in semiconductor strain metrology.

  12. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

    PubMed Central

    Fluegel, Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; Reno, John L.; Mascarenhas, Angelo

    2015-01-01

    Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10−4. Comparing our strain sensitivity and signal strength in AlxGa1−xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 103, thus obviating key constraints in semiconductor strain metrology. PMID:26017853

  13. 2012 Mask Industry Survey

    NASA Astrophysics Data System (ADS)

    Malloy, Matt; Litt, Lloyd C.

    2012-11-01

    A survey supported by SEMATECH and administered by David Powell Consulting was sent to semiconductor industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. 2012 marks the 11th consecutive year for the mask industry survey. This year's survey and reporting structure are similar to those of the previous years with minor modifications based on feedback from past years and the need to collect additional data on key topics. Categories include general mask information, mask processing, data and write time, yield and yield loss, delivery times, and maintenance and returns. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the mask industry. Results, initial observations, and key comparisons between the 2011 and 2012 survey responses are shown here, including multiple indications of a shift towards the manufacturing of higher end photomasks.

  14. ``Phantom'' Modes in Ab Initio Tunneling Calculations: Implications for Theoretical Materials Optimization, Tunneling, and Transport

    NASA Astrophysics Data System (ADS)

    Barabash, Sergey V.; Pramanik, Dipankar

    2015-03-01

    Development of low-leakage dielectrics for semiconductor industry, together with many other areas of academic and industrial research, increasingly rely upon ab initio tunneling and transport calculations. Complex band structure (CBS) is a powerful formalism to establish the nature of tunneling modes, providing both a deeper understanding and a guided optimization of materials, with practical applications ranging from screening candidate dielectrics for lowest ``ultimate leakage'' to identifying charge-neutrality levels and Fermi level pinning. We demonstrate that CBS is prone to a particular type of spurious ``phantom'' solution, previously deemed true but irrelevant because of a very fast decay. We demonstrate that (i) in complex materials, phantom modes may exhibit very slow decay (appearing as leading tunneling terms implying qualitative and huge quantitative errors), (ii) the phantom modes are spurious, (iii) unlike the pseudopotential ``ghost'' states, phantoms are an apparently unavoidable artifact of large numerical basis sets, (iv) a presumed increase in computational accuracy increases the number of phantoms, effectively corrupting the CBS results despite the higher accuracy achieved in resolving the true CBS modes and the real band structure, and (v) the phantom modes cannot be easily separated from the true CBS modes. We discuss implications for direct transport calculations. The strategy for dealing with the phantom states is discussed in the context of optimizing high-quality high- κ dielectric materials for decreased tunneling leakage.

  15. Hydrogen fluoride (HF) substance flow analysis for safe and sustainable chemical industry.

    PubMed

    Kim, Junbeum; Hwang, Yongwoo; Yoo, Mijin; Chen, Sha; Lee, Ik-Mo

    2017-11-01

    In this study, the chemical substance flow of hydrogen fluoride (hydrofluoric acid, HF) in domestic chemical industries in 2014 was analyzed in order to provide a basic material and information for the establishment of organized management system to ensure safety during HF applications. A total of 44,751 tons of HF was made by four domestic companies (in 2014); import amount was 95,984 tons in 2014 while 21,579 tons of HF was imported in 2005. The export amount of HF was 2180 tons, of which 2074 ton (China, 1422 tons, U.S. 524 tons, and Malaysia, 128 tons) was exported for the manufacturing of semiconductors. Based on the export and import amounts, it can be inferred that HF was used for manufacturing semiconductors. The industries applications of 161,123 tons of HF were as follows: manufacturing of basic inorganic chemical substance (27,937 tons), manufacturing of other chemical products such as detergents (28,208 tons), manufacturing of flat display (24,896 tons), and manufacturing of glass container package (22,002 tons). In this study, an analysis of the chemical substance flow showed that HF was mainly used in the semiconductor industry as well as glass container manufacturing. Combined with other risk management tools and approaches in the chemical industry, the chemical substance flow analysis (CSFA) can be a useful tool and method for assessment and management. The current CSFA results provide useful information for policy making in the chemical industry and national systems. Graphical abstract Hydrogen fluoride chemical substance flows in 2014 in South Korea.

  16. 78 FR 42777 - Application for Final Commitment for a Long-Term Loan or Financial Guarantee in Excess of $100...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-07-17

    ... the transaction: To support the export of U.S. manufactured semiconductor manufacturing equipment to... supports the manufacture of NAND flash semiconductors. To the extent that Ex-Im Bank is reasonably aware... exportation of goods or provision of services by a United States industry. Parties: Principal Supplier...

  17. Employment Lessons from the Electronics Industry.

    ERIC Educational Resources Information Center

    Alic, John A.; Harris, Martha Caldwell

    1986-01-01

    Semiskilled and "unskilled" workers in semiconductors, computer manufacturing, and consumer electronics industries are more likely than other workers to lose jobs because of technology, imports, and offshore production. However, advances in technology do tend to create jobs for skilled workers. (CT)

  18. Development of biosensors based on the one-dimensional semiconductor nanomaterials.

    PubMed

    Yan, Shancheng; Shi, Yi; Xiao, Zhongdang; Zhou, Minmin; Yan, Wenfu; Shen, Haoliang; Hu, Dong

    2012-09-01

    Biosensors are becoming increasingly important due to their applications in biological and chemical analyses, food safety industry, biomedical diagnostics, clinical detection, and environmental monitoring. Recent years, nanostructured semiconductor materials have been used to fabricate biosensors owing to their biocompatibility, low toxicity, high electron mobility, and easy fabrication. In the present study, we focus on recent various biosensors based on the one-dimensional semiconductor nanomaterials such as electrochemical biosensor, field-effect transistors biosensor, and label-free optical biosensor. In particular, the development of the electrochemical biosensor is discussed detailedly.

  19. Role of measurement in determining science and technology policy

    NASA Astrophysics Data System (ADS)

    Norsworthy, John R.; Jang, Show-Ling

    1992-05-01

    The United States clearly needs an explicit policy toward research and development for high technology products and manufacturing processes. Gomory & Schmitt (1988) and Cohen & Zysman (1988) present qualitative arguments that this is so. Our research into the technology of semiconductors, computers, and telecommunication equipment (Norsworthy and Jang, 1992) provides concrete quantitative evidence as well. The costs of research and development and early manufacturing experience coupled with the nearly costless diffusion of the results of these activities, create special economic circumstances in most high technology industries. These circumstances are more complex than economies of scale, but equally powerful in their implications for market behavior. Like economies of scale, these circumstances will favor those organizations and countries whose competitive strategies acknowledge their existence, and most successfully exploit their effects. They involve aspects not only of scale economies, but of public goods, learning curves, the time value of information, and the after tax cost of capital. In this essay we attempt to describe the phenomena and illustrate them by reference to the semiconductor and related industries. It is generally understood that the benefits of research are difficult to capture by the company or industry that undertakes the research; the more basic the research, the more difficult it will generally be for the sponsoring agency to capture its benefits. Therefore, profit-seeking enterprises under conditions of competition will generally undertake less research than would be optimal from the point of view of society as a whole. A number of studies, confirm this general proposition (Griliches, 1987; Mansfield et al., 1982). Their estimates of the overall rate of return to R&D to the whole society is far above the return to private investment in general. These facts have been recognized in federal government policies that encourage research through the National Science Foundation, the National Institutes of Health, the R&D tax credit, and so forth.

  20. Semiconductor Ion Implanters

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    MacKinnon, Barry A.; Ruffell, John P.

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intelmore » product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.« less

  1. Increased risk of death with congenital anomalies in the offspring of male semiconductor workers.

    PubMed

    Lin, Ching-Chun; Wang, Jung-Der; Hsieh, Gong-Yih; Chang, Yu-Yin; Chen, Pau-Chung

    2008-01-01

    Female workers in the semiconductor industry have higher risks of subfertility and spontaneous abortion, but no studies exploring male-mediated developmental toxicity have been published. This study aimed to investigate whether the offspring of male workers employed in the semiconductor manufacturing industry had an increased risk of death with congenital anomalies. The 6,834 male workers had been employed in the eight semiconductor companies in Taiwan between 1980 and 1994. We identified the live born children with or without congenital anomalies of the workers using the National Birth and Death Registries from the Department of Health, Taiwan. Multiple logistic regression models were used to estimate the odds ratios (OR) of birth outcomes and deaths, controlling for infant sex, maternal age, and paternal education. A total of 5,702 children were born to male workers during the period 1980-1994. There were increased risks of deaths with congenital anomalies (adjusted OR, 3.26; and 95% confidence interval [CI], 1.12-9.44) and heart anomalies (OR, 4.15; 95% CI, 1.08-15.95) in the offspring of male workers who were employed during the two months before conception. We found evidence of a possible link between paternal preconception exposure of semiconductor manufacturing and an increased risk of congenital anomalies, especially of the heart. The possible etiological basis needs to be corroborated in further research.

  2. Business dynamics of lithography at very low k1 factors

    NASA Astrophysics Data System (ADS)

    Harrell, Sam; Preil, Moshe E.

    1999-07-01

    Lithography is the largest capital investment and the largest operating cost component of leading edge semiconductor fabs. In addition, it is the dominant factor in determining the performance of a semiconductor device and is important in determining the yield and thus the economics of a semiconductor circuit. To increase competitiveness and broaden adoption of circuits and the end products in which they are used, there has been and continues to be a dramatic acceleration in the industry roadmap. A critical factor in the acceleration is driving the lithographic images to smaller feature size. There has always been economic tension between the pace of change and the resultant circuit cost. The genius of the semiconductor industry has been in its ability to balance its technology with economic factors and deliver outstanding value to those using the circuits to add value to their end products. The critical question today is whether optical lithography can be successfully and economically extended to maintain and improve the economic benefits of higher complexity circuits. In this paper we will discuss some of these significant tradeoffs required to maintain optically based lithographic progress on the roadmap at acceptable cost.

  3. Department of Defense statement on the X-ray Lithography Program to the Research and Development Subcommittee of the House Armed Services Committee of 100th Congress, second session

    NASA Astrophysics Data System (ADS)

    Maynard, E. D., Jr.

    1988-03-01

    The Department has a broad and necessarily diverse program in semiconductor science and technology. The three principal goals of that effort are: Reduce the gap between commercial integrated circuit usage and its deployment in military systems, assure a healthy on-shore industrial base to support our defense needs, enhance the producibility of specialized military semiconductor products. The major effort to achieve the first of these objectives is the Very High Speed Integrated Circuits (VHSIC) Program which is nearing completion. The Microwave/millimeter wave Monolithic Integrated Circuit (MIMIC) program has just completed a study program to define the product mix needed to meet military system requirements for radar, electronic warfare, smart weapons and telecommunications. We are bringing together the system requirements of all DoD with the device fabrication and product delivery capabilities of industry in an Infrared Focal Plane Array (IRFPA) program. The goal of the Software Initiative is to enhance our warfighting capability through development of efficient software generation technology and products plus the creation of a technology infusion infrastructure to couple the technology and products to system applications. The X-Ray Lithography Program will begin to establish the industrial base which will be required to sustain U.S. leadership in the semiconductor industry for the late 1990s.

  4. Prolonged menstrual cycles in female workers exposed to ethylene glycol ethers in the semiconductor manufacturing industry.

    PubMed

    Hsieh, G-Y; Wang, J-D; Cheng, T-J; Chen, P-C

    2005-08-01

    It has been shown that female workers exposed to ethylene glycol ethers (EGEs) in the semiconductor industry have higher risks of spontaneous abortion, subfertility, and menstrual disturbances, and prolonged waiting time to pregnancy. To examine whether EGEs or other chemicals are associated with long menstrual cycles in female workers in the semiconductor manufacturing industry. Cross-sectional questionnaire survey during the annual health examination at a wafer manufacturing company in Taiwan in 1997. A three tiered exposure-assessment strategy was used to analyse the risk. A short menstrual cycle was defined to be a cycle less than 24 days and a long cycle to be more than 35 days. There were 606 valid questionnaires from 473 workers in fabrication jobs and 133 in non-fabrication areas. Long menstrual cycles were associated with workers in fabrication areas compared to those in non-fabrication areas. Using workers in non-fabrication areas as referents, workers in photolithography and diffusion areas had higher risks for long menstrual cycles. Workers exposed to EGEs and isopropanol, and hydrofluoric acid, isopropanol, and phosphorous compounds also showed increased risks of a long menstrual cycle. Exposure to multiple chemicals, including EGEs in photolithography, might be associated with long menstrual cycles, and may play an important role in a prolonged time to pregnancy in the wafer manufacturing industry; however, the prevalence in the design, possible exposure misclassification, and chance should be considered.

  5. Yield: it's now an entitlement

    NASA Astrophysics Data System (ADS)

    George, Bill

    1994-09-01

    Only a few years ago, the primary method of cost reduction and productivity improvement in the semiconductor industry was increasing manufacturing yields throughout the process. Many of the remarkable reliability improvements realized over the past decade have come about as a result of actions that were originally taken primarily to improve device yields. Obviously, the practice of productivity improvement through yield enhancement is limited to the attainment of 100% yield, at which point some other mechanism must be employed. Traditionally, new products have been introduced to manufacturing at a point of relative immaturity, and semiconductor producers have relied on the traditional `learning curve' method of yield improvement to attain profitable levels of manufacturing yield. Recently, results of a survey of several fabs by a group of University of California at Berkeley researchers in the Competitive Semiconductor Manufacturing Program indicate that most factories learn at about the same rate after startup, in terms of both line yield and defectivity. If this is indeed generally true, then the most competitive factor is the one that starts with the highest yield, and it is difficult to displace a leader once his lead has been established. The two observations made above carry enormous implications for the semiconductor development or manufacturing professional. First, one must achieve very high yields in order to even play the game. Second, the achievement of competitive yields over time in the life of a factory is determined even before the factory is opened, in the planning and development phase. Third, and perhaps most uncomfortable for those of us who have relied on yield improvement as a cost driver, the winners of the nineties will find new levers to drive costs down, having already gotten the benefit of very high yield. This paper looks at the question of how the winners will achieve the critical measures of success, high initial yield and utilization of other cost reduction levers.

  6. General Observation of Photocatalytic Oxygen Reduction to Hydrogen Peroxide by Organic Semiconductor Thin Films and Colloidal Crystals.

    PubMed

    Gryszel, Maciej; Sytnyk, Mykhailo; Jakešová, Marie; Romanazzi, Giuseppe; Gabrielsson, Roger; Heiss, Wolfgang; Głowacki, Eric Daniel

    2018-04-25

    Low-cost semiconductor photocatalysts offer unique possibilities for industrial chemical transformations and energy conversion applications. We report that a range of organic semiconductors are capable of efficient photocatalytic oxygen reduction to H 2 O 2 in aqueous conditions. These semiconductors, in the form of thin films, support a 2-electron/2-proton redox cycle involving photoreduction of dissolved O 2 to H 2 O 2 , with the concurrent photooxidation of organic substrates: formate, oxalate, and phenol. Photochemical oxygen reduction is observed in a pH range from 2 to 12. In cases where valence band energy of the semiconductor is energetically high, autoxidation competes with oxidation of the donors, and thus turnover numbers are low. Materials with deeper valence band energies afford higher stability and also oxidation of H 2 O to O 2 . We found increased H 2 O 2 evolution rate for surfactant-stabilized nanoparticles versus planar thin films. These results evidence that photochemical O 2 reduction may be a widespread feature of organic semiconductors, and open potential avenues for organic semiconductors for catalytic applications.

  7. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

    DOE PAGES

    Fluegel., Brian; Mialitsin, Aleksej V.; Beaton, Daniel A.; ...

    2015-05-28

    In this study, the semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensitive tools to probe the strain in semiconductors. Here, we demonstrate that minute amounts of strain in thin semiconductor epilayers can be measured using electronic Raman scattering. We applied this strain measurement technique to two different semiconductor alloy systems using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10 –4. Comparing our strain sensitivity andmore » signal strength in Al xGa 1–xAs with those obtained using the industry-standard technique of phonon Raman scattering, we found that there was a sensitivity improvement of 200-fold and a signal enhancement of 4 × 10 3, thus obviating key constraints in semiconductor strain metrology.« less

  8. Charge regulation at semiconductor-electrolyte interfaces.

    PubMed

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2015-07-01

    The interface between a semiconductor material and an electrolyte solution has interesting and complex electrostatic properties. Its behavior will depend on the density of mobile charge carriers that are present in both phases as well as on the surface chemistry at the interface through local charge regulation. The latter is driven by chemical equilibria involving the immobile surface groups and the potential determining ions in the electrolyte solution. All these lead to an electrostatic potential distribution that propagate such that the electrolyte and the semiconductor are dependent on each other. Hence, any variation in the charge density in one phase will lead to a response in the other. This has significant implications on the physical properties of single semiconductor-electrolyte interfaces and on the electrostatic interactions between semiconductor particles suspended in electrolyte solutions. The present paper expands on our previous publication (Fleharty et al., 2014) and offers new results on the electrostatics of single semiconductor interfaces as well as on the interaction of charged semiconductor colloids suspended in electrolyte solution. Copyright © 2014 Elsevier Inc. All rights reserved.

  9. IRIS Toxicological Review of Ingested Inorganic Arsenic (2005 ...

    EPA Pesticide Factsheets

    EPA's Office of Research and Development (ORD), Office of Pesticide Programs (OPP), and Office of Water (OW) requested the SAB to provide advice to the Agency on several issues about the mode of carcinogenic action of various arsenic species and the implications of these issues for EPA's assessment of the cancer hazard and risks of organic and inorganic arsenic. The panel will review an OPP Science Issue Paper (with an attachment prepared by ORD) and a revised hazard and dose response assessment/characterization for inclusion in the Integrated Risk Information System (IRIS) prepared by OW. Inorganic arsenic is used for hardening copper and lead alloys. It also is used in glass manufacturing as a decolorizing and refining agent, as a component of electrical devices, in the semiconductor industry, and as a catalyst in the production of ethylene oxide.

  10. JPRS Report (Erratum), Science & Technology, Japan, Selections from MITI White Paper on Industrial Technology Trends and Issues

    DTIC Science & Technology

    1989-08-30

    year period in the following products: Technology Field Product New materials Composite materials Amorphous alloys Macromolecule separation...plastics 8. Composite materials B. Parts 9. Optical fiber 10. Semiconductor lasers 11. CCD 12. Semiconductor memory elements 13. Microcomputers...separation. Composite materials (containing carbon fiber) (1) Aerospace users required strict specifi cations for carbon fiber, resulting in

  11. Jet and flash imprint defectivity: assessment and reduction for semiconductor applications

    NASA Astrophysics Data System (ADS)

    Malloy, Matt; Litt, Lloyd C.; Johnson, Steve; Resnick, Douglas J.; Lovell, David

    2011-04-01

    Defectivity has been historically identified as a leading technical roadblock to the implementation of nanoimprint lithography for semiconductor high volume manufacturing. The lack of confidence in nanoimprint's ability to meet defect requirements originates in part from the industry's past experiences with 1X lithography and the shortage in end-user generated defect data. SEMATECH has therefore initiated a defect assessment aimed at addressing these concerns. The goal is to determine whether nanoimprint, specifically Jet and Flash Imprint Lithography from Molecular Imprints, is capable of meeting semiconductor industry defect requirements. At this time, several cycles of learning have been completed in SEMATECH's defect assessment, with promising results. J-FIL process random defectivity of < 0.1 def/cm2 has been demonstrated using a 120nm half-pitch template, providing proof of concept that a low defect nanoimprint process is possible. Template defectivity has also improved significantly as shown by a pre-production grade template at 80nm pitch. Cycles of learning continue on feature sizes down to 22nm.

  12. The first principle calculation of two-dimensional Dirac materials

    NASA Astrophysics Data System (ADS)

    Lu, Jin

    2017-12-01

    As the size of integrated device becoming increasingly small, from the last century, semiconductor industry is facing the enormous challenge to break the Moore’s law. The development of calculation, communication and automatic control have emergent expectation of new materials at the aspect of semiconductor industrial technology and science. In spite of silicon device, searching the alternative material with outstanding electronic properties has always been a research point. As the discovery of graphene, the research of two-dimensional Dirac material starts to express new vitality. This essay studied the development calculation of 2D material’s mobility and introduce some detailed information of some approximation method of the first principle calculation.

  13. The Study of an Integrated Rating System for Supplier Quality Performance in the Semiconductor Industry

    NASA Astrophysics Data System (ADS)

    Lee, Yu-Cheng; Yen, Tieh-Min; Tsai, Chih-Hung

    This study provides an integrated model of Supplier Quality Performance Assesment (SQPA) activity for the semiconductor industry through introducing the ISO 9001 management framework, Importance-Performance Analysis (IPA) Supplier Quality Performance Assesment and Taguchi`s Signal-to-Noise Ratio (S/N) techniques. This integrated model provides a SQPA methodology to create value for all members under mutual cooperation and trust in the supply chain. This method helps organizations build a complete SQPA framework, linking organizational objectives and SQPA activities to optimize rating techniques to promote supplier quality improvement. The techniques used in SQPA activities are easily understood. A case involving a design house is illustrated to show our model.

  14. Metrology needs for the semiconductor industry over the next decade

    NASA Astrophysics Data System (ADS)

    Melliar-Smith, Mark; Diebold, Alain C.

    1998-11-01

    Metrology will continue to be a key enabler for the development and manufacture of future generations of integrated circuits. During 1997, the Semiconductor Industry Association renewed the National Technology Roadmap for Semiconductors (NTRS) through the 50 nm technology generation and for the first time included a Metrology Roadmap (1). Meeting the needs described in the Metrology Roadmap will be both a technological and financial challenge. In an ideal world, metrology capability would be available at the start of process and tool development, and silicon suppliers would have 450 mm wafer capable metrology tools in time for development of that wafer size. Unfortunately, a majority of the metrology suppliers are small companies that typically can't afford the additional two to three year wait for return on R&D investment. Therefore, the success of the semiconductor industry demands that we expand cooperation between NIST, SEMATECH, the National Labs, SRC, and the entire community. In this paper, we will discuss several critical metrology topics including the role of sensor-based process control, in-line microscopy, focused measurements for transistor and interconnect fabrication, and development needs. Improvements in in-line microscopy must extend existing critical dimension measurements up to 100 nm generations and new methods may be required for sub 100 nm generations. Through development, existing metrology dielectric thickness and dopant dose and junction methods can be extended to 100 nm, but new and possibly in-situ methods are needed beyond 100 nm. Interconnect process control will undergo change before 100 nm due to the introduction of copper metallization, low dielectric constant interlevel dielectrics, and Damascene process flows.

  15. Information Technology and the Third Industrial Revolution.

    ERIC Educational Resources Information Center

    Fitzsimmons, Joe

    1994-01-01

    Discusses the so-called third industrial revolution, or the information revolution. Topics addressed include the progression of the revolution in the U.S. economy, in Europe, and in Third World countries; the empowering technologies, including digital switches, optical fiber, semiconductors, CD-ROM, networks, and combining technologies; and future…

  16. Technical change in US industry: A cross-industry analysis

    NASA Technical Reports Server (NTRS)

    Nelson, R. R. (Editor)

    1981-01-01

    The nature of the public policies which have influenced the pace and pattern of technical progress in a number of American industries is studied with the view of assessing the broad effects of these policies. The industries studied are agriculture, pharmaceuticals, semiconductors, computers, civil aircraft, automobiles and residential construction. The policies considered include research and development funding as well as government procurement, education, information dissemination, patent protection, licensing, regulations, and anti-trust policies.

  17. Methods of Measurement for Semiconductor Materials, Process Control, and Devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1973-01-01

    The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

  18. Microwave Sintering of Ceramic Materials for Industrial Application Final Report CRADA No. TC-1116-95

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Caplan, M.; Tandon, R.; Callis, R.

    The goal of this project was to develop the commercial capability in the US to sinter alumina oxide ceramic parts for the semiconductor manufacturing equipment industry. We planned to use the millimeter microwave (30 GHz) sintering system first developed by IAP in Russia.

  19. Industrial Electronics II for ICT. Student's Manual.

    ERIC Educational Resources Information Center

    Snider, Bob

    This student manual contains the following six units for classroom and laboratory experiences in high school industrial electronics: (1) introduction and review of DC and AC circuits; (2) semiconductors; (3) integrated circuits; (4) digital basics; (5) complex digital circuits; and (6) computer circuits. The units include unit objectives, specific…

  20. Development of Nanomechanical Sensors for Breast Cancer Biomarkers

    DTIC Science & Technology

    2008-06-01

    semiconductor industry in developing large scale integrated circuits at very lost cost can lead to similar breakthroughs in array sensors for biomolecules of...insulated from the serum or buffer. The entire device is mounted onto a semiconductor chip carrier, for easy integration with electronics. Figure 3...Keithley 2400 source meter. The ac modulation and the dc bias are added by a noninverting summing circuit, which is integrated with the preamplifier

  1. Contention Bounds for Combinations of Computation Graphs and Network Topologies

    DTIC Science & Technology

    2014-08-08

    member of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and ASPIRE Lab industrial sponsors and affiliates Intel...Google, Nokia, NVIDIA , Oracle, MathWorks and Samsung. Also funded by U.S. DOE Office of Science, Office of Advanced Scientific Computing Research...DARPA Award Number HR0011-12-2- 0016, the Center for Future Architecture Research, a mem- ber of STARnet, a Semiconductor Research Corporation

  2. Use of reverse osmosis membranes to remove perfluorooctane sulfonate (PFOS) from semiconductor wastewater.

    PubMed

    Tang, Chuyang Y; Fu, Q Shiang; Robertson, A P; Criddle, Craig S; Leckie, James O

    2006-12-01

    Perfluorooctane sulfonate (PFOS) and related substances are persistent, bioaccumulative, and toxic, and thus of substantial environmental concern. PFOS is an essential photolithographic chemical in the semiconductor industry with no substitutes yet identified. The industry seeks effective treatment technologies. The feasibility of using reverse osmosis (RO) membranes for treating semiconductor wastewater containing PFOS has been investigated. Commercial RO membranes were characterized in terms of permeability, salt rejection, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and membrane surface zeta potential (streaming potential measurements). Filtration tests were performed to determine the membrane flux and PFOS rejection. Over a wide range of feed concentrations (0.5 - 1500 ppm), the RO membranes generally rejected 99% or more of the PFOS. Rejection was better for tighter membranes, but was not affected by membrane zeta potential. Flux decreased with increasing PFOS concentration. While the flux reduction was severe for a loose RO membrane probably due to its higher initial flux, very stable flux was maintained for tighter membranes. At a very high feed concentration (about 500 ppm), all the membranes exhibited an identical stable flux. Isopropyl alcohol, present in some semiconductor wastewaters, had a detrimental effect on membrane flux. Where present it needs to be removed from the wastewater prior to using RO membranes.

  3. Time-Resolved Photoluminescence Microscopy for the Analysis of Semiconductor-Based Paint Layers

    PubMed Central

    Mosca, Sara; Gonzalez, Victor; Eveno, Myriam

    2017-01-01

    In conservation, science semiconductors occur as the constituent matter of the so-called semiconductor pigments, produced following the Industrial Revolution and extensively used by modern painters. With recent research highlighting the occurrence of various degradation phenomena in semiconductor paints, it is clear that their detection by conventional optical fluorescence imaging and microscopy is limited by the complexity of historical painting materials. Here, we illustrate and prove the capabilities of time-resolved photoluminescence (TRPL) microscopy, equipped with both spectral and lifetime sensitivity at timescales ranging from nanoseconds to hundreds of microseconds, for the analysis of cross-sections of paint layers made of luminescent semiconductor pigments. The method is sensitive to heterogeneities within micro-samples and provides valuable information for the interpretation of the nature of the emissions in samples. A case study is presented on micro samples from a painting by Henri Matisse and serves to demonstrate how TRPL can be used to identify the semiconductor pigments zinc white and cadmium yellow, and to inform future investigations of the degradation of a cadmium yellow paint. PMID:29160862

  4. Polycrystalline silicon material availability and market pricing outlook for 1980 through 1988

    NASA Technical Reports Server (NTRS)

    Costogue, E. N.; Ferber, R. R.

    1984-01-01

    The results of the second JPL update to an original report to assess the availability and prices of polycrystalline Si for solar cells in the 1983-88 interval are reported. It is noted that the demand for poly-Si for solar cells competes with the demand for the same material for semiconductors, although the solar cell industry can use material rejected from the semiconductor industry. A sufficient supply is projected for the 6 yr period, rising from 3224 metric tons to 10,220 metric tons in 1988, with prices dropping from the 1980 level of $140/kg to $25/kg. The price reduction and improved production are noted to be due in large part to DOE efforts at defining lower-cost production processes.

  5. Measurements of Thermophysical Properties of Molten Silicon and Geranium

    NASA Technical Reports Server (NTRS)

    Rhim, Won-Kyu

    2001-01-01

    The objective of this ground base program is to measure thermophysical properties of molten/ undercooled silicon, germanium, and Si-Ge alloys using a high temperature electrostatic levitator and in clearly assessing the need of the microgravity environment to achieve the objective with higher degrees of accuracy. Silicon and germanium are two of the most important semiconductors for industrial applications: silicon is unsurpassed as a microelectronics material, occupying more than 95% of the electronics market. Si-Ge alloy is attracting keen interest for advanced electronic and optoelectronic applications in view of its variable band gap and lattice parameter depending upon its composition. Accurate thermophysical properties of these materials are very much needed in the semiconductor industry for the growth of large high quality crystals.

  6. Fbis report. Science and technology: Economic review, September 19, 1995

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    NONE

    1995-09-19

    ;Partial Contents: Germany: Braunschweig University Tests Organic Semiconductors; France: Ariane-5 Tests Suspended; First Tests in Euro-Russian RECORD Rocket Engine Program; France: Renault`s Multi-Model Assembly Line Presented; Germany: New High Speed Trains Under Development; France: Matra Test Drone, Missile Systems; France: Experimental Project for Automobile Recycling; Germany: Survey of Flexible Manufacturing Developments; Germany: Heinrich Hertz Institute Produces Polymer-Based Circuit; French Firms Introduce Computerized Control Room for Nuclear Plants; German Machine Tool Industry Calls for Information Technology Projects; Germany: R&D Achievements in Digital HDTV Reported; Hungary: Secondary Telecommunications Networks Described; EU: Mergers in Pharmaceutical Industry Reported; SGS-Thomson Business Performance Analyzed; Germany`s Siemensmore » Invest Heavily in UK Semiconductor Plant.« less

  7. The floating-gate non-volatile semiconductor memory--from invention to the digital age.

    PubMed

    Sze, S M

    2012-10-01

    In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

  8. Occupational health provision and health surveillance in the semiconductor industry.

    PubMed

    Kinoulty, Mary; Williams, Nerys

    2006-03-01

    To identify the nature of occupational health provision in UK semiconductor-manufacturing plants. To identify the level of industry compliance with legal health surveillance requirements. A national inspection programme was carried out by Health & Safety Executive inspectors using a developed protocol. A wide range of occupational health provision was identified from none to use of an accredited specialist. The majority of work was of a reactive nature even where there was specialist occupational health input. Seven companies were identified as not meeting legal compliance and one as having unacceptable compliance for health surveillance. The spectrum of occupational health provision was very wide. Where health surveillance was provided, it was poorly targeted with limited interpretation and feedback to management.

  9. Temperature-dependent mechanical behavior of silicon dioxide, gold and gold-vanadium thin films for VLSI integrated circuits and MicroElectroMechanical systems (MEMs)

    NASA Astrophysics Data System (ADS)

    Lin, Ming-Tzer

    The Semiconductor Industry has grown rapidly in the last twenty years. The national technology roadmap for semiconductors plans for developing the complexity and packing density of semiconductor devices into the next decade, allowing ever smaller and more densely packed structures to be fabricated. Recently, MEMS (Micro-Electro-Mechanical Systems) have become important in modern technology. The goal of MEMs is to integrate many types of miniature devices on a single chip, creating a new micro-world. The oxidation of silicon is one of the most important processes in semiconductor technology. Producing high-quality IC's and MEMS devices requires an understanding of the basic oxidation mechanism. In addition, for the reliability of IC's and MEMS devices, the mechanical properties of the oxide play a critical role. There has been an apparent convergence of opinion on the relevant mechanism leading to the "standard computational model" for stress effects on silicon oxidation. This model has recently become suspect. Most of the reasonably direct experimental data on the flow properties of SiO 2 thin film do not support a stress-dependent viscosity of the sort envisioned by the model. Gold and gold vanadium alloys are used in electrical interconnections and in radio frequency switch contacts for the semiconductor industry, MEMs sensors for the aerospace industry and also in brain probes by the bioelectronics mechanical industry. Despite the strong potential usage of gold and gold vanadium thin films at the small scale, very little is known about their mechanical properties. Our goal was to experimentally investigate stress and its influence on SiO2 thin films and the mechanical properties of gold and gold vanadium thin films at room temperature and at elevated temperature of different vanadium concentration. We found that the application of relatively small amounts of bending to an oxidizing silicon substrate leads to significant decreases in oxide thickness in the ultrathin oxide regime. Both tensile and compressive bending retard oxide growth, although compressive bending results in somewhat thinner oxides than does tensile bending. We also determined the modulus of gold and gold vanadium, and discovered that there is some evidence for a vanadium concentration dependence of the mechanical properties.

  10. Radiation immune RAM semiconductor technology for the 80's. [Random Access Memory

    NASA Technical Reports Server (NTRS)

    Hanna, W. A.; Panagos, P.

    1983-01-01

    This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

  11. Electronics Industry Study Report: Semiconductors and Defense Electronics

    DTIC Science & Technology

    2003-01-01

    Access Memory (DRAM) chips and microprocessors. Samsung , Micron, Hynix, and Infineon control almost three-fourths of the DRAM market,8 while Intel alone...Country 2001 Sales ($B) 2002 Sales ($B) % Change % 2002 Mkt 1 1 Intel U.S. 23.7 24.0 1% 16.9% 2 3 Samsung Semiconductor S. Korea 6.3...located in four major regions: the United States, Europe, Japan, and the Asia-Pacific region (includes South Korea, China, Singapore, Malaysia , Taiwan

  12. Sensors, nano-electronics and photonics for the Army of 2030 and beyond

    NASA Astrophysics Data System (ADS)

    Perconti, Philip; Alberts, W. C. K.; Bajaj, Jagmohan; Schuster, Jonathan; Reed, Meredith

    2016-02-01

    The US Army's future operating concept will rely heavily on sensors, nano-electronics and photonics technologies to rapidly develop situational understanding in challenging and complex environments. Recent technology breakthroughs in integrated 3D multiscale semiconductor modeling (from atoms-to-sensors), combined with ARL's Open Campus business model for collaborative research provide a unique opportunity to accelerate the adoption of new technology for reduced size, weight, power, and cost of Army equipment. This paper presents recent research efforts on multi-scale modeling at the US Army Research Laboratory (ARL) and proposes the establishment of a modeling consortium or center for semiconductor materials modeling. ARL's proposed Center for Semiconductor Materials Modeling brings together government, academia, and industry in a collaborative fashion to continuously push semiconductor research forward for the mutual benefit of all Army partners.

  13. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    NASA Astrophysics Data System (ADS)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  14. Research and Development Strategies in the Semiconductor Industry

    NASA Astrophysics Data System (ADS)

    Bowling, Allen

    2003-03-01

    In the 21st Century semiconductor industry, there is a critical balance between internally funded semiconductor research and development (R) and externally funded R. External R may include jointly-funded research collaborations/partnerships with other device manufacturers, jointly-funded consortia-based R, and individually-funded research programs at universities and other contract research locations. Each of these approaches has merits and each has costs. There is a critical balance between keeping the internal research and development pipeline filled and keeping it from being overspent. To meet both competitive schedule and cost goals, a semiconductor device manufacturer must decide on a model for selection of internal versus external R. Today, one of the most critical decisions is whether or not to do semiconductor research and development on 300 mm silicon wafers. Equipment suppliers are doing first development on 300 mm equipment. So, for the device manufacturer, there is a balance between the cost of doing development on 300 mm wafers and the development time schedule driven by equipment availability. In the face of these cost and schedule elements, device manufacturers are looking to consortia such as SEMATECH, SRC, and SRC MARCO for early development and screening of new materials and device structure approaches. This also causes much more close development collaboration between device manufacturer and equipment supplier. Many device manufacturers are also making use of direct contract research with universities and other contract-research organizations, such as IMEC, LETI, and other government-funded research organizations around the world. To get the most out of these external research interactions, the company must develop a strategy for management and technology integration of external R.

  15. Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

    PubMed

    Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

    2015-09-28

    The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

  16. Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

    NASA Astrophysics Data System (ADS)

    Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

    2015-09-01

    The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

  17. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun

    The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

  18. Accumulation of trace elements used in semiconductor industry in Formosan squirrel, as a bio-indicator of their exposure, living in Taiwan.

    PubMed

    Suzuki, Yoshinari; Watanabe, Izumi; Oshida, Tatsuo; Chen, Yen-Jean; Lin, Liang-Kong; Wang, Yu-Huang; Yang, Kouh-Cheng; Kuno, Katsuji

    2007-07-01

    Concentrations of 17 trace elements were analyzed using inductively coupled plasma-mass spectrometry (ICP-MS) in Formosan squirrels (Callosciurus erythraeus) of Taiwan and Japan to document trace element pollution in Taiwan. High concentrations of elements used to produce semiconductors - Ga, As, Cd, In and Tl - were found in animals captured in Miaoli County, which is the nearest site to Hsinchu City, a chief city of Taiwan's semiconductor industry. Significant correlations between Ga, As, In and Tl were found in the kidney, liver, lung and muscle tissues of Taiwanese squirrels. Hierarchical cluster analysis indicated that Ga, As, In and Tl were of the same clade, indicating that Ga, As, In and Tl were discharged from an identical origin. Molar ratios of Ga/As concentration in lungs of animals captured in Miaoli resembled those of animals after intratracheal administration of particulate gallium arsenide (GaAs). This result might indicate that the higher concentrations of Ga and As in the specimens in Miaoli resulted from atmospheric exposure to GaAs.

  19. Roles of chemical metrology in electronics industry and associated environment in Korea: a tutorial.

    PubMed

    Kang, Namgoo; Joong Kim, Kyung; Seog Kim, Jin; Hae Lee, Joung

    2015-03-01

    Chemical metrology is gaining importance in electronics industry that manufactures semiconductors, electronic displays, and microelectronics. Extensive and growing needs from this industry have raised the significance of accurate measurements of the amount of substances and material properties. For the first time, this paper presents information on how chemical metrology is being applied to meet a variety of needs in the aspects of quality control of electronics products and environmental regulations closely associated with electronics industry. For a better understanding of the roles of the chemical metrology within electronics industry, the recent research activities and results in chemical metrology are presented using typical examples in Korea where electronic industry is leading a national economy. Particular attention is paid to the applications of chemical metrology for advancing emerging electronics technology developments. Such examples are a novel technique for the accurate quantification of gas composition at nano-liter levels within a MEMS package, the surface chemical analysis of a semiconductor device. Typical metrological tools are also presented for the development of certified reference materials for fluorinated greenhouse gases and proficiency testing schemes for heavy metals and chlorinated toxic gas in order to cope properly with environmental issues within electronics industry. In addition, a recent technique is presented for the accurate measurement of the destruction and removal efficiency of a typical greenhouse gas scrubber. Copyright © 2014 Elsevier B.V. All rights reserved.

  20. Strategy, Distinctive Competence, and Organizational Performance.

    ERIC Educational Resources Information Center

    Snow, Charles C.; Hrebiniak, Lawrence G.

    1980-01-01

    Focuses on the perceptions of top managers in four industries (plastics, semiconductors, automotives, and air transportation) who examined relationships among strategy, distinctive competence, and organizational performance. (Author/IRT)

  1. Estimates of occupational safety and health impacts resulting from large-scale production of major photovoltaic technologies

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Owens, T.; Ungers, L.; Briggs, T.

    1980-08-01

    The purpose of this study is to estimate both quantitatively and qualitatively, the worker and societal risks attributable to four photovoltaic cell (solar cell) production processes. Quantitative risk values were determined by use of statistics from the California semiconductor industry. The qualitative risk assessment was performed using a variety of both governmental and private sources of data. The occupational health statistics derived from the semiconductor industry were used to predict injury and fatality levels associated with photovoltaic cell manufacturing. The use of these statistics to characterize the two silicon processes described herein is defensible from the standpoint that many ofmore » the same process steps and materials are used in both the semiconductor and photovoltaic industries. These health statistics are less applicable to the gallium arsenide and cadmium sulfide manufacturing processes, primarily because of differences in the materials utilized. Although such differences tend to discourage any absolute comparisons among the four photovoltaic cell production processes, certain relative comparisons are warranted. To facilitate a risk comparison of the four processes, the number and severity of process-related chemical hazards were assessed. This qualitative hazard assessment addresses both the relative toxicity and the exposure potential of substances in the workplace. In addition to the worker-related hazards, estimates of process-related emissions and wastes are also provided.« less

  2. Overview of atomic layer etching in the semiconductor industry

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kanarik, Keren J., E-mail: keren.kanarik@lamresearch.com; Lill, Thorsten; Hudson, Eric A.

    2015-03-15

    Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article providesmore » defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.« less

  3. Combined VIS-IR spectrometer with vertical probe beam

    NASA Astrophysics Data System (ADS)

    Protopopov, V.

    2017-12-01

    A prototype of a combined visible-infrared spectrometer with a vertical probe beam is designed and tested. The combined spectral range is 0.4-20 μ with spatial resolution 1 mm. Basic features include the ability to measure both visibly transparent and opaque substances, as well as buried structures, such as in semiconductor industry; horizontal orientation of a sample, including semiconductor wafers; and reflection mode of operation, delivering twice the sensitivity compared to the transmission mode.

  4. Real-time and online screening method for materials emitting volatile organic compounds

    NASA Astrophysics Data System (ADS)

    Kim, Changhyuk; Sul, Yong Tae; Pui, David Y. H.

    2016-09-01

    In the semiconductor industry, volatile organic compounds (VOCs) in the cleanroom air work as airborne molecular contamination, which reduce the production yield of semiconductor chips by forming nanoparticles and haze on silicon wafers and photomasks under ultraviolet irradiation during photolithography processes. Even though VOCs in outdoor air are removed by gas filters, VOCs can be emitted from many kinds of materials used in cleanrooms, such as organic solvents and construction materials (e.g., adhesives, flame retardants and sealants), threatening the production of semiconductors. Therefore, finding new replacements that emit lower VOCs is now essential in the semiconductor industry. In this study, we developed a real-time and online method to screen materials for developing the replacements by converting VOCs into nanoparticles under soft X-ray irradiation. This screening method was applied to measure VOCs emitted from different kinds of organic solvents and adhesives. Our results showed good repeatability and high sensitivity for VOCs, which come from aromatic compounds, some alcohols and all tested adhesives (Super glue and cleanroom-use adhesives). In addition, the overall trend of measured VOCs from cleanroom-use adhesives was well matched with those measured by a commercial thermal desorption-gas chromatography-mass spectrometry, which is a widely used off-line method for analyzing VOCs. Based on the results, this screening method can help accelerate the developing process for reducing VOCs in cleanrooms.

  5. Industry-Oriented Laboratory Development for Mixed-Signal IC Test Education

    ERIC Educational Resources Information Center

    Hu, J.; Haffner, M.; Yoder, S.; Scott, M.; Reehal, G.; Ismail, M.

    2010-01-01

    The semiconductor industry is lacking qualified integrated circuit (IC) test engineers to serve in the field of mixed-signal electronics. The absence of mixed-signal IC test education at the collegiate level is cited as one of the main sources for this problem. In response to this situation, the Department of Electrical and Computer Engineering at…

  6. Industrial Applications of Low Temperature Plasmas

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bardsley, J N

    2001-03-15

    The use of low temperature plasmas in industry is illustrated by the discussion of four applications, to lighting, displays, semiconductor manufacturing and pollution control. The type of plasma required for each application is described and typical materials are identified. The need to understand radical formation, ionization and metastable excitation within the discharge and the importance of surface reactions are stressed.

  7. 77 FR 1505 - Certain Integrated Circuits, Chipsets, and Products Containing Same Including Televisions; Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-01-10

    ... Freescale Semiconductor, Inc. of Austin, Texas. The complaint alleges violations of section 337 based upon... `455 patent''). The complaint further alleges that an industry in the United States exists as required... televisions that infringe one or more of claims 9 and 10, and whether an industry in the United States exists...

  8. 75 FR 5349 - Investigations Regarding Certifications of Eligibility To Apply for Worker Adjustment Assistance

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-02

    ... Products, LLC (Comp). Walterboro, SC........ 12/16/09 12/09/09 73110 Robin Industries, Inc. Cleveland, OH... Garland Commercial Freeland, PA 12/18/09 12/17/09 Industries, LLC (Comp). 73124 Suite Simplicity, LLC.../09 73126 Frescale Semiconductor, Austin, TX 12/18/09 12/11/09 Inc. (Wkrs). 73127 Freescale...

  9. Computers and Employment.

    ERIC Educational Resources Information Center

    McConnell, Sheila; And Others

    1996-01-01

    Includes "Role of Computers in Reshaping the Work Force" (McConnell); "Semiconductors" (Moris); "Computer Manufacturing" (Warnke); "Commercial Banking Transformed by Computer Technology" (Morisi); "Software, Engineering Industries: Threatened by Technological Change?" (Goodman); "Job Creation…

  10. Optics education for machine operators in the semiconductor industry: moving beyond button pushing

    NASA Astrophysics Data System (ADS)

    Karakekes, Meg; Currier, Deborah

    1995-10-01

    In the competitive semiconductor manufacturing industry, employees who operate equipment are able to make greater contributions if they understand how the equipment works. By understanding the 'why' behind the 'what', the equipment operators can better partner with other technical staff to produce quality integrated circuits efficiently and effectively. This additional knowledge also opens equipment operators to job enrichment and enlargement opportunities. Advanced Micro Devices (AMD) is in the process of upgrading the skills of its equipment operators. This paper is an overview of a pilot program that employs optics education to upgrade stepper operators' skills. The paper starts with stepper tasks that require optics knowledge, examines teaching methods, reports both end-of-course and three months post-training knowledge retention, and summarizes how the training has impacted the production floor.

  11. Electronic Raman Scattering as an Ultra-Sensitive Probe of Strain Effects in Semiconductors

    NASA Astrophysics Data System (ADS)

    Mascarenhas, Angelo; Fluegel, Brian; Beaton, Dan

    Semiconductor strain engineering has become a critical feature of high-performance electronics due to the significant device performance enhancements it enables. These improvements that emerge from strain induced modifications to the electronic band structure necessitate new ultra-sensitive tools for probing strain in semiconductors. Using electronic Raman scattering, we recently showed that it is possible to measure minute amounts of strain in thin semiconductor epilayers. We applied this strain measurement technique to two different semiconductor alloy systems, using coherently strained epitaxial thin films specifically designed to produce lattice-mismatch strains as small as 10-4. Comparing our strain sensitivity and signal strength in AlxGa1-xAs with those obtained using the industry-standard technique of phonon Raman scattering we found a sensitivity improvement of ×200, and a signal enhancement of 4 ×103 thus obviating key constraints in semiconductor strain metrology. The sensitivity of this approach rivals that of contemporary techniques and opens up a new realm for optically probing strain effects on electronic band structure. We acknowledge the financial support of the DOE Office of Science, BES under DE-AC36-80GO28308.

  12. Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

    PubMed

    Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E

    2006-03-15

    Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

  13. Porous Diblock Copolymer Thin Films in High-Performance Semiconductor Microelectronics

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Black, C.T.

    2011-02-01

    The engine fueling more than 40 years of performance improvements in semiconductor integrated circuits (ICs) has been industry's ability to pattern circuit elements at ever-higher resolution and with ever-greater precision. Steady advances in photolithography - the process wherein ultraviolet light chemically changes a photosensitive polymer resist material in order to create a latent image - have resulted in scaling of minimum printed feature sizes from tens of microns during the 1980s to sub-50 nanometer transistor gate lengths in today's state-of-the-art ICs. The history of semiconductor technology scaling as well as future technology requirements is documented in the International Technology Roadmapmore » for Semiconductors (ITRS). The progression of the semiconductor industry to the realm of nanometer-scale sizes has brought enormous challenges to device and circuit fabrication, rendering performance improvements by conventional scaling alone increasingly difficult. Most often this discussion is couched in terms of field effect transistor (FET) feature sizes such as the gate length or gate oxide thickness, however these challenges extend to many other aspects of the IC, including interconnect dimensions and pitch, device packing density, power consumption, and heat dissipation. The ITRS Technology Roadmap forecasts a difficult set of scientific and engineering challenges with no presently-known solutions. The primary focus of this chapter is the research performed at IBM on diblock copolymer films composed of polystyrene (PS) and poly(methyl-methacrylate) (PMMA) (PS-b-PMMA) with total molecular weights M{sub n} in the range of {approx}60K (g/mol) and polydispersities (PD) of {approx}1.1. These materials self assemble to form patterns having feature sizes in the range of 15-20nm. PS-b-PMMA was selected as a self-assembling patterning material due to its compatibility with the semiconductor microelectronics manufacturing infrastructure, as well as the significant body of existing research on understanding its material properties.« less

  14. Environmentally benign semiconductor processing for dielectric etch

    NASA Astrophysics Data System (ADS)

    Liao, Marci Yi-Ting

    Semiconductor processing requires intensive usage of chemicals, electricity, and water. Such intensive resource usage leaves a large impact on the environment. For instance, in Silicon Valley, the semiconductor industry is responsible for 80% of the hazardous waste sites contaminated enough to require government assistance. Research on environmentally benign semiconductor processing is needed to reduce the environmental impact of the semiconductor industry. The focus of this dissertation is on the environmental impact of one aspect of semiconductor processing: patterning of dielectric materials. Plasma etching of silicon dioxide emits perfluorocarbons (PFCs) gases, like C2F6 and CF4, into the atmosphere. These gases are super global warming/greenhouse gases because of their extremely long atmospheric lifetimes and excellent infrared absorption properties. We developed the first inductively coupled plasma (ICP) abatement device for destroying PFCs downstream of a plasma etcher. Destruction efficiencies of 99% and 94% can be obtained for the above mentioned PFCs, by using O 2 as an additive gas. Our results have lead to extensive modeling in academia as well as commercialization of the ICP abatement system. Dielectric patterning of hi-k materials for future device technology brings different environment challenges. The uncertainty of the hi-k material selection and the patterning method need to be addressed. We have evaluated the environmental impact of three different dielectric patterning methods (plasma etch, wet etch and chemical-mechanical polishing), as well as, the transistor device performances associated with the patterning methods. Plasma etching was found to be the most environmentally benign patterning method, which also gives the best device performance. However, the environmental concern for plasma etching is the possibility of cross-contamination from low volatility etch by-products. Therefore, mass transfer in a plasma etcher for a promising hi-k dielectric material, ZrO2, was studied. A novel cross-contamination sampling technique was developed, along with a mass transfer model.

  15. Solar Photovoltaic Array With Mini-Dome Fresnel Lenses

    NASA Technical Reports Server (NTRS)

    Piszczor, Michael F., Jr.; O'Neill, Mark J.

    1994-01-01

    Mini-dome Fresnel lenses concentrate sunlight onto individual photovoltaic cells. Facets of Fresnel lens designed to refract incident light at angle of minimum deviation to minimize reflective losses. Prismatic cover on surface of each cell reduces losses by redirecting incident light away from metal contacts toward bulk of semiconductor, where it is usefully absorbed. Simple design of mini-dome concentrator array easily adaptable to automated manufacturing techniques currently used by semiconductor industry. Attractive option for variety of future space missions.

  16. Application of polymer-coated metal-insulator-semiconductor sensors for the detection of dissolved hydrogen

    NASA Astrophysics Data System (ADS)

    Li, Dongmei; Medlin, J. W.; Bastasz, R.

    2006-06-01

    The detection of dissolved hydrogen in liquids is crucial to many industrial applications, such as fault detection for oil-filled electrical equipment. To enhance the performance of metal-insulator-semiconductor (MIS) sensors for dissolved hydrogen detection, a palladium MIS sensor has been modified by depositing a polyimide (PI) layer above the palladium surface. Response measurements of the PI-coated sensors in mineral oil indicate that hydrogen is sensitively detected, while the effect of interfering gases on sensor response is minimized.

  17. Cases series of malignant lymphohematopoietic disorder in korean semiconductor industry.

    PubMed

    Kim, Eun-A; Lee, Hye-Eun; Ryu, Hyung-Woo; Park, Seung-Hyun; Kang, Seong-Kyu

    2011-06-01

    Seven cases of malignant lymphohematopoietic (LHP) disorder were claimed to have developed from occupational exposure at two plants of a semiconductor company from 2007 to 2010. This study evaluated the possibility of exposure to carcinogenic agents for the cases. Clinical courses were reviewed with assessing possible exposure to carcinogenic agents related to LHP cancers. Chemicals used at six major semiconductor companies in Korea were reviewed. Airborne monitoring for chemicals, including benzene, was conducted and the ionizing radiation dose was measured from 2008 to 2010. The latency of seven cases (five leukemiae, a Non-Hodgkin's lymphoma, and an aplastic anemia) ranged from 16 months to 15 years and 5 months. Most chemical measurements were at levels of less than 10% of the Korean Occupational Exposure Limit value. No carcinogens related to LHP cancers were used or detected. Complete-shielded radiation-generating devices were used, but the ionizing radiation doses were 0.20-0.22 uSv/hr (background level: 0.21 µSv/hr). Airborne benzene was detected at 0.31 ppb when the detection limit was lowered as low as possible. Ethylene oxide and formaldehyde were not found in the cases' processes, while these two were determined to be among the 263 chemicals in the list that was used at the six semiconductor companies at levels lower than 0.1%. Exposures occurring before 2002 could not be assessed because of the lack of information. Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one.

  18. Cases Series of Malignant Lymphohematopoietic Disorder in Korean Semiconductor Industry

    PubMed Central

    Lee, Hye-Eun; Ryu, Hyung-Woo; Park, Seung-Hyun; Kang, Seong-Kyu

    2011-01-01

    Objectives Seven cases of malignant lymphohematopoietic (LHP) disorder were claimed to have developed from occupational exposure at two plants of a semiconductor company from 2007 to 2010. This study evaluated the possibility of exposure to carcinogenic agents for the cases. Methods Clinical courses were reviewed with assessing possible exposure to carcinogenic agents related to LHP cancers. Chemicals used at six major semiconductor companies in Korea were reviewed. Airborne monitoring for chemicals, including benzene, was conducted and the ionizing radiation dose was measured from 2008 to 2010. Results The latency of seven cases (five leukemiae, a Non-Hodgkin's lymphoma, and an aplastic anemia) ranged from 16 months to 15 years and 5 months. Most chemical measurements were at levels of less than 10% of the Korean Occupational Exposure Limit value. No carcinogens related to LHP cancers were used or detected. Complete-shielded radiation-generating devices were used, but the ionizing radiation doses were 0.20-0.22 uSv/hr (background level: 0.21 µSv/hr). Airborne benzene was detected at 0.31 ppb when the detection limit was lowered as low as possible. Ethylene oxide and formaldehyde were not found in the cases' processes, while these two were determined to be among the 263 chemicals in the list that was used at the six semiconductor companies at levels lower than 0.1%. Exposures occurring before 2002 could not be assessed because of the lack of information. Conclusion Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one. PMID:22953195

  19. A Microcomputer-Based Program for Printing Check Plots of Integrated Circuits Specified in Caltech Intermediate Form.

    DTIC Science & Technology

    1984-12-01

    only four transistors[5]. Each year since that time, the semiconductor industry has con- sistently improved the quality of the fabrication tech- niques...rarely took place at universities and was almost exclusively confined to industry . IC design techniques were developed, tested, and taught only in the...community, it is not uncommon for industry to borrow ideas and even particular programs from these university designed tools. The Very Large Scale Integration

  20. Economic impact of large public programs: The NASA experience

    NASA Technical Reports Server (NTRS)

    Ginzburg, E.; Kuhn, J. W.; Schnee, J.; Yavitz, B.

    1976-01-01

    The economic impact of NASA programs on weather forecasting and the computer and semiconductor industries is discussed. Contributions to the advancement of the science of astronomy are also considered.

  1. Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

    PubMed

    Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

    2017-06-01

    The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

    PubMed Central

    Long, Rathnait D.; McIntyre, Paul C.

    2012-01-01

    The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS) devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

  3. Japan Report, Science and Technology.

    DTIC Science & Technology

    1987-02-06

    cyclodextrin, which consists of natural cyclic oligosaccharides . Recently, the author and co-workers have found that methylated CD works as an effective...industry as catalysts for the production of olefin derivatives. This is quite interesting, when we compare it with the shitasu process . Research on...lasers in machin- ing and medicine, particularly in semiconductor processing . According to the Optoelectronic Industry and Technology Development

  4. 75 FR 5149 - Employment and Training Administration Investigations Regarding Certifications of Eligibility To...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-01

    ...). 73109 Dayco Products, LLC (Comp). Walterboro, SC........ 12/16/09 12/09/09 73110 Robin Industries, Inc.../17/09 73123 Garland Commercial Freeland, PA 12/18/09 12/17/09 Industries, LLC (Comp). 73124 Suite..., TX 12/18/09 12/16/09 73126 Freescale Semiconductor, Austin, TX 12/18/09 12/11/09 Inc. (Wkrs). 73127...

  5. 77 FR 35426 - Certain Radio Frequency Integrated Circuits and Devices Containing Same; Institution of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-13

    ... U.S.C. 1337, on behalf of Peregrine Semiconductor Corporation of San Diego, California. Supplements... alleges that an industry in the United States exists as required by subsection (a)(2) of section 337. The...; and claims 1, 3, 5, and 6 of the `499 patent, and whether an industry in the United States exists as...

  6. Advanced process control framework initiative

    NASA Astrophysics Data System (ADS)

    Hill, Tom; Nettles, Steve

    1997-01-01

    The semiconductor industry, one the world's most fiercely competitive industries, is driven by increasingly complex process technologies and global competition to improve cycle time, quality, and process flexibility. Due to the complexity of these problems, current process control techniques are generally nonautomated, time-consuming, reactive, nonadaptive, and focused on individual fabrication tools and processes. As the semiconductor industry moves into higher density processes, radical new approaches are required. To address the need for advanced factory-level process control in this environment, Honeywell, Advanced Micro Devices (AMD), and SEMATECH formed the Advanced Process Control Framework Initiative (APCFI) joint research project. The project defines and demonstrates an Advanced Process Control (APC) approach based on SEMATECH's Computer Integrated Manufacturing (CIM) Framework. Its scope includes the coordination of Manufacturing Execution Systems, process control tools, and wafer fabrication equipment to provide necessary process control capabilities. Moreover, it takes advantage of the CIM Framework to integrate and coordinate applications from other suppliers that provide services necessary for the overall system to function. This presentation discusses the key concept of model-based process control that differentiates the APC Framework. This major improvement over current methods enables new systematic process control by linking the knowledge of key process settings to desired product characteristics that reside in models created with commercial model development tools The unique framework-based approach facilitates integration of commercial tools and reuse of their data by tying them together in an object-based structure. The presentation also explores the perspective of each organization's involvement in the APCFI project. Each has complementary goals and expertise to contribute; Honeywell represents the supplier viewpoint, AMD represents the user with 'real customer requirements', and SEMATECH provides a consensus-building organization that widely disseminates technology to suppliers and users in the semiconductor industry that face similar equipment and factory control systems challenges.

  7. Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

    NASA Astrophysics Data System (ADS)

    Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

    2017-06-01

    The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (<50% spread). The performance of our device demonstrates a feasible path to dramatic improvements in lithographic patterning systems, enabling continued progress in existing industries and opening opportunities in nanomanufacturing.

  8. Mode Hopping in Semiconductor Lasers

    NASA Astrophysics Data System (ADS)

    Heumier, Timothy Alan

    Semiconductor lasers have found widespread use in fiberoptic communications, merchandising (bar-code scanners), entertainment (videodisc and compact disc players), and in scientific inquiry (spectroscopy, laser cooling). Some uses require a minimum degree of stability of wavelength which is not met by these lasers: Under some conditions, semiconductor lasers can discontinuously switch wavelengths in a back-and-forth manner. This is called mode hopping. We show that mode hopping is directly correlated to noise in the total intensity, and that this noise is easily detected by a photodiode. We also show that there are combinations of laser case temperature and injection current which lead to mode hopping. Conversely, there are other combinations for which the laser is stable. These results are shown to have implications for controlling mode hopping.

  9. Determination of a natural valence-band offset - The case of HgTe and CdTe

    NASA Technical Reports Server (NTRS)

    Shih, C. K.; Spicer, W. E.

    1987-01-01

    A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

  10. Recovery of hazardous semiconductor-industry sludge as a useful resource.

    PubMed

    Lee, Tzen-Chin; Liu, Feng-Jiin

    2009-06-15

    Sludge, a solid waste recovered from wastewater of semiconductor-industries composes of agglomerates of nano-particles like SiO(2) and CaF(2). This sludge deflocculates in acidic and alkaline aqueous solutions into nano-particles smaller than 100 nm. Thus, this sludge is potentially hazardous to water resources when improperly dumped. It can cause considerable air-pollution when fed into rotary-kilns as a raw material for cement production. In this study, dried and pulverized sludge was used to replace 5-20 wt.% Portland cement in cement mortar. The compressive strength of the modified mortar was higher than that of plain cement mortar after curing for 3 days and more. In particular, the strength of mortar with 10 wt.% substitution improved by 25-35% after curing for 7-90 days. TCLP studies reveal no detectable release of heavy metals. Preliminary studies showed that nano-particles deflocculated from the sludge, when cured for up to 3 days retain in the modified mortar their nano-size, which become large-sized hydration compounds that contribute to the final mortar strength. Semiconductor sludge can thus be utilized as a useful resource to replace portion of cement in cement mortar, thereby avoiding their potential hazard on the environment.

  11. Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics

    PubMed Central

    Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Yun Jaung, Jae; Kim, Yong-Hoon; Kyu Park, Sung

    2015-01-01

    The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics. PMID:26411932

  12. Plasma Diagnostics: Use and Justification in an Industrial Environment

    NASA Astrophysics Data System (ADS)

    Loewenhardt, Peter

    1998-10-01

    The usefulness and importance of plasma diagnostics have played a major role in the development of plasma processing tools in the semiconductor industry. As can be seen through marketing materials from semiconductor equipment manufacturers, results from plasma diagnostic equipment can be a powerful tool in selling the technological leadership of tool design. Some diagnostics have long been used for simple process control such as optical emission for endpoint determination, but in recent years more sophisticated and involved diagnostic tools have been utilized in chamber and plasma source development and optimization. It is now common to find an assortment of tools at semiconductor equipment companies such as Langmuir probes, mass spectrometers, spatial optical emission probes, impedance, ion energy and ion flux probes. An outline of how the importance of plasma diagnostics has grown at an equipment manufacturer over the last decade will be given, with examples of significant and useful results obtained. Examples will include the development and optimization of an inductive plasma source, trends and hardware effects on ion energy distributions, mass spectrometry influences on process development and investigations of plasma-wall interactions. Plasma diagnostic focus, in-house development and proliferation in an environment where financial justification requirements are both strong and necessary will be discussed.

  13. Scalable sub-micron patterning of organic materials toward high density soft electronics

    DOE PAGES

    Kim, Jaekyun; Kim, Myung -Gil; Kim, Jaehyun; ...

    2015-09-28

    The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. Inmore » this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. As a result, the successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.« less

  14. Efficient p-n junction-based thermoelectric generator that can operate at extreme temperature conditions

    NASA Astrophysics Data System (ADS)

    Chavez, Ruben; Angst, Sebastian; Hall, Joseph; Maculewicz, Franziska; Stoetzel, Julia; Wiggers, Hartmut; Thanh Hung, Le; Van Nong, Ngo; Pryds, Nini; Span, Gerhard; Wolf, Dietrich E.; Schmechel, Roland; Schierning, Gabi

    2018-01-01

    In many industrial processes, a large proportion of energy is lost in the form of heat. Thermoelectric generators can convert this waste heat into electricity by means of the Seebeck effect. However, the use of thermoelectric generators in practical applications on an industrial scale is limited in part because electrical, thermal, and mechanical bonding contacts between the semiconductor materials and the metal electrodes in current designs are not capable of withstanding thermal-mechanical stress and alloying of the metal-semiconductor interface when exposed to the high temperatures occurring in many real-world applications. Here we demonstrate a concept for thermoelectric generators that can address this issue by replacing the metallization and electrode bonding on the hot side of the device by a p-n junction between the two semiconductor materials, making the device robust against temperature induced failure. In our proof-of-principle demonstration, a p-n junction device made from nanocrystalline silicon is at least comparable in its efficiency and power output to conventional devices of the same material and fabrication process, but with the advantage of sustaining high hot side temperatures and oxidative atmosphere.

  15. Career Opportunities for Physicists in the Micro Electronics Industry

    NASA Astrophysics Data System (ADS)

    Bourianoff, George

    1997-10-01

    The US micro electronics industry anticipates growth of 20 to 30 percent per year for the next five years. The need for engineers and scientists poses a critical problem for the industry but conversely presents great opportunities for those in closely related fields such as physics where career opportunities may be more limited. There is no shortage of important and challenging problems on the Semiconductor Institute of America (SIA) roadmap which will require solution in the next 10 years and which require expertise in the physical sciences. However, significant cultural differences exist between the physics community and the engineering oriented semiconductor community which must be understood and addressed in order for a physicist to successfully contribute in this environment. This talk will identify some of those cultural differences and describe some of the critical physics related problems which must be solved. Critical roadblocks include lithographic patterning below 0.18m. and design of Very Large Scale Integrated (VLSI) circuits in the deep submicron regime. The former will require developing radiation sources and optical elements for the EUV or XRAY part of the spectrum. The latter will require incorporating electromagnetic field equations with traditional lumped element circuit design methods. The cultural barriers alluded to earlier involve the manner in which engineering detail is approached. A physicist's basic instinct is to strip off the detail in order to make a problem mathematically tractable. This enables understanding of the underlying physical relationships but does not yield the quantitative detail necessary in semiconductor production.

  16. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    PubMed

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

  17. Toxicity review of ethylene glycol monomethyl ether and its acetate ester.

    PubMed

    Johanson, G

    2000-05-01

    Ethylene glycol monomethyl ether (EGME) and its acetate ester (EGMEA) are highly flammable, colorless, moderately volatile liquids with very good solubility properties. They are used in paints, lacquers, stains, inks and surface coatings, silk-screen printing, photographic and photo lithographic processes, for example, in the semiconductor industry, textile and leather finishing, production of food-contact plastics, and as an antiicing additive in hydraulic fluids and jet fuel. EGME and EGMEA are efficiently absorbed by inhalation as well as via dermal penetration. Dermal absorption may contribute substantially to the total uptake following skin contact with liquids or vapours containing EGME or EGMEA. EGMEA is rapidly converted to EGME in the body and the two substances are equally toxic in animals. Therefore, the two substances should be considered as equally hazardous to man. Effects on peripheral blood, testes, and sperm have been reported at occupational exposure levels ranging between 0.4 and 10 ppm EGME in air, and with additional, possibly substantial, dermal exposure. Severe malformations and disturbed hematopoiesis have been linked with exposure to EGME and EGMEA at unknown, probably high, levels. Embryonic deaths in monkeys and impaired spermatogenesis in rabbits have been reported after daily oral doses of 12 and 25 mg per kg body weight, respectively. In several studies, increased frequency of spontaneous abortions, disturbed menstrual cycle, and subfertility have been demonstrated in women working in the semiconductor industry. The contribution of EGME in relation to other exposure factors in the semiconductor industry is unclear.

  18. The Microcalorimeter for Industrial Applications

    PubMed Central

    Redfern, Del; Nicolosi, Joe; Höhne, Jens; Weiland, Rainer; Simmnacher, Birgit; Hollerich, Christian

    2002-01-01

    To achieve the dramatic increases in x-ray spectral resolution (<20 eV at 1.5k eV) desired by market segments such as the semiconductor industry, NIST developed a transition-edge sensor (TES) microcalorimeter. To bring this exciting, yet demanding, new technology to the industrial users, certain criteria must be addressed. Aspects of resolution, cooling and hold time, count rates as well as vibrations are considered. Data is presented to the present efforts to handle these issues as well as discussing development plans for the future. PMID:27446756

  19. 75 FR 16837 - In the Matter of Certain Integrated Circuits, Chipsets, and Products Containing Same Including...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-02

    .... 1337, on behalf of Freescale Semiconductor, Inc. of Austin, Texas. A letter supplementing the complaint...,715,014; and 7,199,306. The complaint further alleges that an industry in the United States exists as...,715,014; and claims 1, 6, 11, and 13-16 of U.S. Patent No. 7,199,306, and whether an industry in the...

  20. 76 FR 66331 - Investigations Regarding Certifications of Eligibility To Apply for Worker Adjustment Assistance...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-26

    ... Subject Firm (petitioners) Location institution petition 80486 Lattice Semiconductor Bethlehem, PA.../11 80498 InterMetro Industries Fostoria, OH 10/07/11 10/05/11 (Company). 80499 Standard Insurance...

  1. Materials for high-density electronic packaging and interconnection

    NASA Technical Reports Server (NTRS)

    1990-01-01

    Electronic packaging and interconnections are the elements that today limit the ultimate performance of advanced electronic systems. Materials in use today and those becoming available are critically examined to ascertain what actions are needed for U.S. industry to compete favorably in the world market for advanced electronics. Materials and processes are discussed in terms of the final properties achievable and systems design compatibility. Weak points in the domestic industrial capability, including technical, industrial philosophy, and political, are identified. Recommendations are presented for actions that could help U.S. industry regain its former leadership position in advanced semiconductor systems production.

  2. How architecture wins technology wars.

    PubMed

    Morris, C R; Ferguson, C H

    1993-01-01

    Signs of revolutionary transformation in the global computer industry are everywhere. A roll call of the major industry players reads like a waiting list in the emergency room. The usual explanations for the industry's turmoil are at best inadequate. Scale, friendly government policies, manufacturing capabilities, a strong position in desktop markets, excellent software, top design skills--none of these is sufficient, either by itself or in combination, to ensure competitive success in information technology. A new paradigm is required to explain patterns of success and failure. Simply stated, success flows to the company that manages to establish proprietary architectural control over a broad, fast-moving, competitive space. Architectural strategies have become crucial to information technology because of the astonishing rate of improvement in microprocessors and other semiconductor components. Since no single vendor can keep pace with the outpouring of cheap, powerful, mass-produced components, customers insist on stitching together their own local systems solutions. Architectures impose order on the system and make the interconnections possible. The architectural controller is the company that controls the standard by which the entire information package is assembled. Microsoft's Windows is an excellent example of this. Because of the popularity of Windows, companies like Lotus must conform their software to its parameters in order to compete for market share. In the 1990s, proprietary architectural control is not only possible but indispensable to competitive success. What's more, it has broader implications for organizational structure: architectural competition is giving rise to a new form of business organization.

  3. Advanced chip designs and novel cooling techniques for brightness scaling of industrial, high power diode laser bars

    NASA Astrophysics Data System (ADS)

    Heinemann, S.; McDougall, S. D.; Ryu, G.; Zhao, L.; Liu, X.; Holy, C.; Jiang, C.-L.; Modak, P.; Xiong, Y.; Vethake, T.; Strohmaier, S. G.; Schmidt, B.; Zimer, H.

    2018-02-01

    The advance of high power semiconductor diode laser technology is driven by the rapidly growing industrial laser market, with such high power solid state laser systems requiring ever more reliable diode sources with higher brightness and efficiency at lower cost. In this paper we report simulation and experimental data demonstrating most recent progress in high brightness semiconductor laser bars for industrial applications. The advancements are in three principle areas: vertical laser chip epitaxy design, lateral laser chip current injection control, and chip cooling technology. With such improvements, we demonstrate disk laser pump laser bars with output power over 250W with 60% efficiency at the operating current. Ion implantation was investigated for improved current confinement. Initial lifetime tests show excellent reliability. For direct diode applications <1 um smile and >96% polarization are additional requirements. Double sided cooling deploying hard solder and optimized laser design enable single emitter performance also for high fill factor bars and allow further power scaling to more than 350W with 65% peak efficiency with less than 8 degrees slow axis divergence and high polarization.

  4. Performance Management and Optimization of Semiconductor Design Projects

    NASA Astrophysics Data System (ADS)

    Hinrichs, Neele; Olbrich, Markus; Barke, Erich

    2010-06-01

    The semiconductor industry is characterized by fast technological changes and small time-to-market windows. Improving productivity is the key factor to stand up to the competitors and thus successfully persist in the market. In this paper a Performance Management System for analyzing, optimizing and evaluating chip design projects is presented. A task graph representation is used to optimize the design process regarding time, cost and workload of resources. Key Performance Indicators are defined in the main areas cost, profit, resources, process and technical output to appraise the project.

  5. Production of solar chemicals: gaining selectivity with hybrid molecule/semiconductor assemblies.

    PubMed

    Hennessey, Seán; Farràs, Pau

    2018-05-29

    Research on the production of solar fuels and chemicals has rocketed over the past decade, with a wide variety of systems proposed to harvest solar energy and drive chemical reactions. In this Feature Article we have focused on hybrid molecule/semiconductor assemblies in both powder and supported materials, summarising recent systems and highlighting the enormous possibilities offered by such assemblies to carry out highly demanding chemical reactions with industrial impact. Of relevance is the higher selectivity obtained in visible light-driven organic transformations when using molecular catalysts compared to photocatalytic materials.

  6. Coherent diffractive imaging methods for semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Helfenstein, Patrick; Mochi, Iacopo; Rajeev, Rajendran; Fernandez, Sara; Ekinci, Yasin

    2017-12-01

    The paradigm shift of the semiconductor industry moving from deep ultraviolet to extreme ultraviolet lithography (EUVL) brought about new challenges in the fabrication of illumination and projection optics, which constitute one of the core sources of cost of ownership for many of the metrology tools needed in the lithography process. For this reason, lensless imaging techniques based on coherent diffractive imaging started to raise interest in the EUVL community. This paper presents an overview of currently on-going research endeavors that use a number of methods based on lensless imaging with coherent light.

  7. Methods of measurement for semiconductor materials, process control, and devices

    NASA Technical Reports Server (NTRS)

    Bullis, W. M. (Editor)

    1973-01-01

    This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

  8. Plasma Processes for Semiconductor Fabrication

    NASA Astrophysics Data System (ADS)

    Hitchon, W. N. G.

    1999-01-01

    Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

  9. Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

    PubMed Central

    Averyanov, Dmitry V.; Karateeva, Christina G.; Karateev, Igor A.; Tokmachev, Andrey M.; Vasiliev, Alexander L.; Zolotarev, Sergey I.; Likhachev, Igor A.; Storchak, Vyacheslav G.

    2016-01-01

    Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics. PMID:26957146

  10. TiO2-Based Nanoheterostructures for Promoting Gas Sensitivity Performance: Designs, Developments, and Prospects

    PubMed Central

    Wang, Yuan; Wu, Tao; Zhou, Yun; Meng, Chuanmin; Zhu, Wenjun; Liu, Lixin

    2017-01-01

    Gas sensors based on titanium dioxide (TiO2) have attracted much public attention during the past decades due to their excellent potential for applications in environmental pollution remediation, transportation industries, personal safety, biology, and medicine. Numerous efforts have therefore been devoted to improving the sensing performance of TiO2. In those effects, the construct of nanoheterostructures is a promising tactic in gas sensing modification, which shows superior sensing performance to that of the single component-based sensors. In this review, we briefly summarize and highlight the development of TiO2-based heterostructure gas sensing materials with diverse models, including semiconductor/semiconductor nanoheterostructures, noble metal/semiconductor nanoheterostructures, carbon-group-materials/semiconductor nano- heterostructures, and organic/inorganic nanoheterostructures, which have been investigated for effective enhancement of gas sensing properties through the increase of sensitivity, selectivity, and stability, decrease of optimal work temperature and response/recovery time, and minimization of detectable levels. PMID:28846621

  11. Recent advances in electron tomography: TEM and HAADF-STEM tomography for materials science and semiconductor applications.

    PubMed

    Kübel, Christian; Voigt, Andreas; Schoenmakers, Remco; Otten, Max; Su, David; Lee, Tan-Chen; Carlsson, Anna; Bradley, John

    2005-10-01

    Electron tomography is a well-established technique for three-dimensional structure determination of (almost) amorphous specimens in life sciences applications. With the recent advances in nanotechnology and the semiconductor industry, there is also an increasing need for high-resolution three-dimensional (3D) structural information in physical sciences. In this article, we evaluate the capabilities and limitations of transmission electron microscopy (TEM) and high-angle-annular-dark-field scanning transmission electron microscopy (HAADF-STEM) tomography for the 3D structural characterization of partially crystalline to highly crystalline materials. Our analysis of catalysts, a hydrogen storage material, and different semiconductor devices shows that features with a diameter as small as 1-2 nm can be resolved in three dimensions by electron tomography. For partially crystalline materials with small single crystalline domains, bright-field TEM tomography provides reliable 3D structural information. HAADF-STEM tomography is more versatile and can also be used for high-resolution 3D imaging of highly crystalline materials such as semiconductor devices.

  12. A hybrid life cycle inventory of nano-scale semiconductor manufacturing.

    PubMed

    Krishnan, Nikhil; Boyd, Sarah; Somani, Ajay; Raoux, Sebastien; Clark, Daniel; Dornfeld, David

    2008-04-15

    The manufacturing of modern semiconductor devices involves a complex set of nanoscale fabrication processes that are energy and resource intensive, and generate significant waste. It is important to understand and reduce the environmental impacts of semiconductor manufacturing because these devices are ubiquitous components in electronics. Furthermore, the fabrication processes used in the semiconductor industry are finding increasing application in other products, such as microelectromechanical systems (MEMS), flat panel displays, and photovoltaics. In this work we develop a library of typical gate-to-gate materials and energy requirements, as well as emissions associated with a complete set of fabrication process models used in manufacturing a modern microprocessor. In addition, we evaluate upstream energy requirements associated with chemicals and materials using both existing process life cycle assessment (LCA) databases and an economic input-output (EIO) model. The result is a comprehensive data set and methodology that may be used to estimate and improve the environmental performance of a broad range of electronics and other emerging applications that involve nano and micro fabrication.

  13. Charge density dependent mobility of organic hole-transporters and mesoporous TiO₂ determined by transient mobility spectroscopy: implications to dye-sensitized and organic solar cells.

    PubMed

    Leijtens, Tomas; Lim, Jongchul; Teuscher, Joël; Park, Taiho; Snaith, Henry J

    2013-06-18

    Transient mobility spectroscopy (TMS) is presented as a new tool to probe the charge carrier mobility of commonly employed organic and inorganic semiconductors over the relevant range of charge densities. The charge density dependence of the mobility of semiconductors used in hybrid and organic photovoltaics gives new insights into charge transport phenomena in solid state dye sensitized solar cells. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Occupational injury and illness in the semiconductor manufacturing industry.

    PubMed

    McCurdy, S A; Schenker, M B; Lassiter, D V

    1989-01-01

    Two thousand nine hundred and ninety-four reports of OSHA-reportable occupational injury or illness cases in 1984 from member companies of a national trade association of semiconductor manufacturing firms were analyzed. The 37 participating manufacturing facilities represented 16 companies employing over 95,000 persons, or approximately one-third of the U.S. work force for this industry in 1984. The annual incidence rate for all reportable injuries and illnesses was 2.7 per 100 full-time employees (FTE) for men and 3.7 per 100 FTE for women. Strains, sprains, or dislocations were the most frequently reported incidents (N = 956 [31.9%]), followed by cuts, lacerations, punctures, scratches, and abrasions (N = 445 [14.9%]), and chemical burns (N = 401 [13.4%]). Increased work-loss days per case were associated with manufacturing sites that did not have an employee health clinic on the premises, with custodial occupations, and with female gender.

  15. Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

    NASA Astrophysics Data System (ADS)

    Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

    2017-09-01

    The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

  16. Novel nano-semiconductor film layer supported nano-Pd Complex Nanostructured Catalyst Pd/Ⓕ-MeOx/AC for High Efficient Selective Hydrogenation of Phenol to Cyclohexanone.

    PubMed

    Si, Jiaqi; Ouyang, Wenbing; Zhang, Yanji; Xu, Wentao; Zhou, Jicheng

    2017-04-28

    Supported metal as a type of heterogeneous catalysts are the most widely used in industrial processes. High dispersion of the metal particles of supported catalyst is a key factor in determining the performance of such catalysts. Here we report a novel catalyst Pd/Ⓕ-MeO x /AC with complex nanostructured, Pd nanoparticles supported on the platelike nano-semiconductor film/activated carbon, prepared by the photocatalytic reduction method, which exhibited high efficient catalytic performance for selective hydrogenation of phenol to cyclohexanone. Conversion of phenol achieved up to more than 99% with a lower mole ratio (0.5%) of active components Pd and phenol within 2 h at 70 °C. The synergistic effect of metal nanoparticles and nano-semiconductors support layer and the greatly increasing of contact interface of nano-metal-semiconductors may be responsible for the high efficiency. This work provides a clear demonstration that complex nanostructured catalysts with nano-metal and nano-semiconductor film layer supported on high specific surface AC can yield enhanced catalytic activity and can afford promising approach for developing new supported catalyst.

  17. The Internationalization of Industry. Annex B. Offshore Production in the International Semiconductor Industry,

    DTIC Science & Technology

    1981-11-01

    essence of these arrangements is specialization based in international differentials in * 379 the costs of labor services. The availability of low...of electronic equipment vary with the complexity and cost of the equipment, a differentiated market for chips of varying densities, for use in...level of chip density, while more complex products will be most economically produced with higher levels of chip density. Thuse a differentiated

  18. Defense Industrial Base Assessment: U.S. Imaging and Sensors Industry

    DTIC Science & Technology

    2006-10-01

    uncooled devices, but provide much higher resolution. The semiconductor material used in the detector is typically mercury cadmium telluride (HgCdTe...The material principally used in the arrays was mercury cadmium telluride (HgCdTe). Generation 2 detectors significantly improved the signal-to...Silicide (PtSi), Gallium Arsenide (GaAs), Aluminum Gallium Arsenide (AlGaAs), Mercury Cadmium Telluride (HgCdTe), Indium Gallium Arsenide (InGaAs

  19. Engineering English and the High-Tech Industry: A Case Study of an English Needs Analysis of Process Integration Engineers at a Semiconductor Manufacturing Company in Taiwan

    ERIC Educational Resources Information Center

    Spence, Paul; Liu, Gi-Zen

    2013-01-01

    The global high-tech industry is characterized by extreme competitiveness, innovation, and widespread use of English. Consequently, Taiwanese high-tech companies require engineers that are talented in both their engineering and English abilities. In response to the lack of knowledge regarding the English skills needed by engineers in Taiwan's…

  20. Source identification and apportionment of halogenated compounds observed at a remote site in East Asia.

    PubMed

    Li, Shanlan; Kim, Jooil; Park, Sunyoung; Kim, Seung-Kyu; Park, Mi-Kyung; Mühle, Jens; Lee, Gangwoong; Lee, Meehye; Jo, Chun Ok; Kim, Kyung-Ryul

    2014-01-01

    The sources of halogenated compounds in East Asia associated with stratospheric ozone depletion and climate change are relatively poorly understood. High-precision in situ measurements of 18 halogenated compounds and carbonyl sulfide (COS) made at Gosan, Jeju Island, Korea, from November 2007 to December 2011 were analyzed by a positive matrix factorization (PMF). Seven major industrial sources were identified from the enhanced concentrations of halogenated compounds observed at Gosan and corresponding concentration-based source contributions were also suggested: primary aluminum production explaining 37% of total concentration enhancements, solvent usage of which source apportionment is 25%, fugitive emissions from HCFC/HFC production with 11%, refrigerant replacements (9%), semiconductor/electronics industry (9%), foam blowing agents (6%), and fumigation (3%). Statistical trajectory analysis was applied to specify the potential emission regions for seven sources using back trajectories. Primary aluminum production, solvent usage and fugitive emission sources were mainly contributed by China. Semiconductor/electronics sources were dominantly located in Korea. Refrigerant replacement, fumigation and foam blowing agent sources were spread throughout East Asian countries. The specified potential source regions are consistent with country-based consumptions and emission patterns, verifying the PMF analysis results. The industry-based emission sources of halogenated compounds identified in this study help improve our understanding of the East Asian countries' industrial contributions to halogenated compound emissions.

  1. Lithography for enabling advances in integrated circuits and devices.

    PubMed

    Garner, C Michael

    2012-08-28

    Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

  2. The Asian Semiconductor Industry and It’s Potential Impacts to U.S. National Security. Electronics Industry Study

    DTIC Science & Technology

    2007-01-01

    late 1980s, Korean firms began to compete globally on memory chips, with Samsung earning a sales profit in 1987 (Pecht, 1997, p. 10; Mathews, 2000, p...competitive in the 1990s (Lee, 1997, p. 41). Singapore, Malaysia and China have since developed significant chip industries (Beane, 1997, p. 9; Pecht...sales in parentheses): #2 Samsung ($19.7B), #5 Toshiba ($9.8B), #6 TSMC ($9.7B), #7 Hynix ($8.0B) and #8 Renesas ($7.9B) (McGrath, 2007, p. 3

  3. Space Station - The base for tomorrow's electronic industry

    NASA Technical Reports Server (NTRS)

    Naumann, Robert J.

    1985-01-01

    The potential value of space material processing on the Space Station for the electronics industry is examined. The primary advantages of the space environment for producing high-purity semiconductors and electrooptical materials are identified as the virtual absence of gravity (suppressing buoyancy-driven convection in melts and density segregation of alloys) and the availabilty of high vacuum (with high pumping speed and heat rejection). The recent history of material development and processing technology in the electronics industry is reviewed, and the principal features of early space experiments are outlined.

  4. Electron beam irradiation processing for industrial and medical applications

    NASA Astrophysics Data System (ADS)

    Ozer, Zehra Nur

    2017-09-01

    In recent years, electron beam processing has been widely used for medical and industrial applications. Electron beam accelerators are reliable and durable equipments that can produce ionizing radiation when it is needed for a particular commercial use. On the industrial scale, accelerators are used to generate electrons in between 0.1-100 MeV energy range. These accelerators are used mainly in plastics, automotive, wire and electric cables, semiconductors, health care, aerospace and environmental industries, as well as numerous researches. This study presents the current applications of electron beam processing in medicine and industry. Also planned study of a design for such a system in the energy range of 200-300 keV is introduced.

  5. Job Prospects for E/E Engineers.

    ERIC Educational Resources Information Center

    Basta, Nicholas

    1986-01-01

    Reviews job prospects for electrical/electronic E/E engineers, indicating that 1985 was not a banner year due to problems in the semiconductor manufacturing industries and in telecommunications. Also indicates that an upturn is expected for 1986 E/E graduates. (JN)

  6. Nuclear Science Symposium, 23rd, Scintillation and Semiconductor Counter Symposium, 15th, and Nuclear Power Systems Symposium, 8th, New Orleans, La., October 20-22, 1976, Proceedings

    NASA Technical Reports Server (NTRS)

    Wagner, L. J.

    1977-01-01

    The volume includes papers on semiconductor radiation detectors of various types, components of radiation detection and dosimetric systems, digital and microprocessor equipment in nuclear industry and science, and a wide variety of applications of nuclear radiation detectors. Semiconductor detectors of X-rays, gamma radiation, heavy ions, neutrons, and other nuclear particles, plastic scintillator arrays, drift chambers, spark wire chambers, and radiation dosimeter systems are reported on. Digital and analog conversion systems, digital data and control systems, microprocessors, and their uses in scientific research and nuclear power plants are discussed. Large-area imaging and biomedical nucleonic instrumentation, nuclear power plant safeguards, reactor instrumentation, nuclear power plant instrumentation, space instrumentation, and environmental instrumentation are dealt with. Individual items are announced in this issue.

  7. Analytical approaches to optimizing system "Semiconductor converter-electric drive complex"

    NASA Astrophysics Data System (ADS)

    Kormilicin, N. V.; Zhuravlev, A. M.; Khayatov, E. S.

    2018-03-01

    In the electric drives of the machine-building industry, the problem of optimizing the drive in terms of mass-size indicators is acute. The article offers analytical methods that ensure the minimization of the mass of a multiphase semiconductor converter. In multiphase electric drives, the form of the phase current at which the best possible use of the "semiconductor converter-electric drive complex" for active materials is different from the sinusoidal form. It is shown that under certain restrictions on the phase current form, it is possible to obtain an analytical solution. In particular, if one assumes the shape of the phase current to be rectangular, the optimal shape of the control actions will depend on the width of the interpolar gap. In the general case, the proposed algorithm can be used to solve the problem under consideration by numerical methods.

  8. Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

    PubMed

    Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

    2015-07-08

    Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

  9. Process Control in Production-Worthy Plasma Doping Technology

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Winder, Edmund J.; Fang Ziwei; Arevalo, Edwin

    2006-11-13

    As the semiconductor industry continues to scale devices of smaller dimensions and improved performance, many ion implantation processes require lower energy and higher doses. Achieving these high doses (in some cases {approx}1x1016 ions/cm2) at low energies (<3 keV) while maintaining throughput is increasingly challenging for traditional beamline implant tools because of space-charge effects that limit achievable beam density at low energies. Plasma doping is recognized as a technology which can overcome this problem. In this paper, we highlight the technology available to achieve process control for all implant parameters associated with modem semiconductor manufacturing.

  10. 78 FR 55759 - Investigations Regarding Eligibility To Apply for Worker Adjustment Assistance

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-09-11

    ... Pico Rivera, CA.... 08/21/13 08/20/13 (Company). 83012 Bush Industries, Inc. Jamestown, NY...... 08/21........... 08/22/13 08/21/13 (Workers). 83016 Fairchild Semiconductor West Jordan, UT.... 08/22/13 08/15/13...

  11. Korean Affairs Report.

    DTIC Science & Technology

    1985-05-29

    been caught by the fascist jackals ’ atrocious tentacle are not safe. In particular» it is common practice in South Korea that those who live justly are...a golden market with an extraordinary growth rate. The bold development of our country’s semiconductor industry is predicated on the realization...million sets during the coming 12 months. According to industry sources on the 27th, the world VTR market is a golden market, with yearly sales of

  12. Voluntary GHG reduction of industrial sectors in Taiwan.

    PubMed

    Chen, Liang-Tung; Hu, Allen H

    2012-08-01

    The present paper describes the voluntary greenhouse gas (GHG) reduction agreements of six different industrial sectors in Taiwan, as well as the fluorinated gases (F-gas) reduction agreement of the semiconductor and Liquid Crystal Display (LCD) industries. The operating mechanisms, GHG reduction methods, capital investment, and investment effectiveness are also discussed. A total of 182 plants participated in the voluntary energy saving and GHG reduction in six industrial sectors (iron and steel, petrochemical, cement, paper, synthetic fiber, and textile printing and dyeing), with 5.35 Mt reduction from 2004 to 2008, or 33% higher than the target goal (4.02 Mt). The reduction accounts for 1.6% annual emission or 7.8% during the 5-yr span. The petrochemical industry accounts for 49% of the reduction, followed by the cement sector (21%) and the iron and steel industry (13%). The total investment amounted to approximately USD 716 million, in which, the majority of the investment went to the modification of the manufacturing process (89%). The benefit was valued at around USD 472 million with an average payback period of 1.5 yr. Moreover, related energy saving was achieved through different approaches, e.g., via electricity (iron and steel), steam and oil consumption (petrochemical) and coal usage (cement). The cost for unit CO(2) reduction varies per industry, with the steel and iron industrial sector having the highest cost (USD 346 t(-1) CO(2)) compared with the average cost of the six industrial sectors (USD 134 t(-1) CO(2)). For the semiconductor and Thin-Film Transistor LCD industries, F-gas emissions were reduced from approximately 4.1 to about 1.7 Mt CO(2)-eq, and from 2.2 to about 1.1 Mt CO(2)-eq, respectively. Incentive mechanisms for participation in GHG reduction are also further discussed. Copyright © 2012 Elsevier Ltd. All rights reserved.

  13. Quantitative Exposure Assessment of Various Chemical Substances in a Wafer Fabrication Industry Facility

    PubMed Central

    Jang, Jae-Kil; Shin, Jung-Ah

    2011-01-01

    Objectives This study was designed to evaluate exposure levels of various chemicals used in wafer fabrication product lines in the semiconductor industry where work-related leukemia has occurred. Methods The research focused on 9 representative wafer fabrication bays among a total of 25 bays in a semiconductor product line. We monitored the chemical substances categorized as human carcinogens with respect to leukemia as well as harmful chemicals used in the bays and substances with hematologic and reproductive toxicities to evaluate the overall health effect for semiconductor industry workers. With respect to monitoring, active and passive sampling techniques were introduced. Eight-hour long-term and 15-minute short-term sampling was conducted for the area as well as on personal samples. Results The results of the measurements for each substance showed that benzene, toluene, xylene, n-butyl acetate, 2-methoxyethanol, 2-heptanone, ethylene glycol, sulfuric acid, and phosphoric acid were non-detectable (ND) in all samples. Arsine was either "ND" or it existed only in trace form in the bay air. The maximum exposure concentration of fluorides was approximately 0.17% of the Korea occupational exposure limits, with hydrofluoric acid at about 0.2%, hydrochloric acid 0.06%, nitric acid 0.05%, isopropyl alcohol 0.4%, and phosphine at about 2%. The maximum exposure concentration of propylene glycol monomethyl ether acetate (PGMEA) was 0.0870 ppm, representing only 0.1% or less than the American Industrial Hygiene Association recommended standard (100 ppm). Conclusion Benzene, a known human carcinogen for leukemia, and arsine, a hematologic toxin, were not detected in wafer fabrication sites in this study. Among reproductive toxic substances, n-butyl acetate was not detected, but fluorides and PGMEA existed in small amounts in the air. This investigation was focused on the air-borne chemical concentrations only in regular working conditions. Unconditional exposures during spills and/or maintenance tasks and by-product chemicals were not included. Supplementary studies might be required. PMID:22953186

  14. Time- and frequency-resolved measurements of frequency modulation and switching of a tunable semiconductor laser

    NASA Astrophysics Data System (ADS)

    Kuznetsov, M.; Stone, J.; Stulz, L. W.

    1991-11-01

    We report measurements of intensity as a function of both time and frequency for frequency modulation and switching of a tunable semiconductor laser. Because of the uncertainty principle limitations, the measured time-frequency signal can have a complex structure and does not show the simple-minded picture of a laser spectrum whose center frequency varies in time. The observations are explained by a theory of the time-dependent spectral measurements, well known in the field of speech analysis. We discuss implications for channel switching speed and channel interference in switched, frequency-multiplexed optical networks.

  15. Development and In Vitro Toxicity Evaluation of Alternative Sustainable Nanomaterials

    EPA Science Inventory

    Novel nanomaterial types are rapidly being developed for the value they may add to consumer products without sufficient evaluation of implications for human health, toxicity, environmental impact and long-term sustainability. Nanomaterials made of metals, semiconductors and vario...

  16. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner on Icelandic National Day In connection with the conference, a summer school for 40 research students was organized by the Nordic LENS network. The summer school took place in Reykjavik on 11-14 June. For more information on the school please visit the website. The next Nordic Semiconductor meeting, NSM 2011, is scheduled to take place in Aarhus, Denmark, 19-22 June 2011. A full participant list is available in the PDF of this article.

  17. Metal Oxide Semi-Conductor Gas Sensors in Environmental Monitoring

    PubMed Central

    Fine, George F.; Cavanagh, Leon M.; Afonja, Ayo; Binions, Russell

    2010-01-01

    Metal oxide semiconductor gas sensors are utilised in a variety of different roles and industries. They are relatively inexpensive compared to other sensing technologies, robust, lightweight, long lasting and benefit from high material sensitivity and quick response times. They have been used extensively to measure and monitor trace amounts of environmentally important gases such as carbon monoxide and nitrogen dioxide. In this review the nature of the gas response and how it is fundamentally linked to surface structure is explored. Synthetic routes to metal oxide semiconductor gas sensors are also discussed and related to their affect on surface structure. An overview of important contributions and recent advances are discussed for the use of metal oxide semiconductor sensors for the detection of a variety of gases—CO, NOx, NH3 and the particularly challenging case of CO2. Finally a description of recent advances in work completed at University College London is presented including the use of selective zeolites layers, new perovskite type materials and an innovative chemical vapour deposition approach to film deposition. PMID:22219672

  18. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

    PubMed Central

    Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

    2013-01-01

    Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739

  19. Measurement of toxic volatile organic compounds in indoor air of semiconductor foundries using multisorbent adsorption/thermal desorption coupled with gas chromatography-mass spectrometry.

    PubMed

    Wu, Chien-Hou; Lin, Ming-Nan; Feng, Chien-Tai; Yang, Kuang-Ling; Lo, Yu-Shiu; Lo, Jiunn-Guang

    2003-05-09

    A method for the qualitative and quantitative analysis of volatile organic compounds (VOCs) in the air of class-100 clean rooms at semiconductor fabrication facilities was developed. Air samples from two semiconductor factories were collected each hour on multisorbent tubes (including Carbopack B, Carbopack C, and Carbosieve SIII) with a 24-h automatic active sampling system and analyzed using adsorption/thermal desorption coupled with gas chromatography-mass spectrometry. Experimental parameters, including thermal desorption temperature, desorption time, and cryofocusing temperature, were optimized. The average recoveries and the method detection limits for the target compounds were in the range 94-101% and 0.31-0.89 ppb, respectively, under the conditions of a 1 L sampling volume and 80% relative humidity. VOCs such as acetone, isopropyl alcohol, 2-heptanone, and toluene, which are commonly used in the semiconductor and electronics industries, were detected and accurately quantified with the established method. Temporal variations of the analyte concentrations observed were attributed to the improper use of organic solvents during operation.

  20. Dynamism in a Semiconductor Industrial Machine Allocation Problem using a Hybrid of the Bio-inspired and Musical-Harmony Approach

    NASA Astrophysics Data System (ADS)

    Kalsom Yusof, Umi; Nor Akmal Khalid, Mohd

    2015-05-01

    Semiconductor industries need to constantly adjust to the rapid pace of change in the market. Most manufactured products usually have a very short life cycle. These scenarios imply the need to improve the efficiency of capacity planning, an important aspect of the machine allocation plan known for its complexity. Various studies have been performed to balance productivity and flexibility in the flexible manufacturing system (FMS). Many approaches have been developed by the researchers to determine the suitable balance between exploration (global improvement) and exploitation (local improvement). However, not much work has been focused on the domain of machine allocation problem that considers the effects of machine breakdowns. This paper develops a model to minimize the effect of machine breakdowns, thus increasing the productivity. The objectives are to minimize system unbalance and makespan as well as increase throughput while satisfying the technological constraints such as machine time availability. To examine the effectiveness of the proposed model, results for throughput, system unbalance and makespan on real industrial datasets were performed with applications of intelligence techniques, that is, a hybrid of genetic algorithm and harmony search. The result aims to obtain a feasible solution to the domain problem.

  1. Maintaining Moore's law: enabling cost-friendly dimensional scaling

    NASA Astrophysics Data System (ADS)

    Mallik, Arindam; Ryckaert, Julien; Mercha, Abdelkarim; Verkest, Diederik; Ronse, Kurt; Thean, Aaron

    2015-03-01

    Moore's Law (Moore's Observation) has been driving the progress in semiconductor technology for the past 50 years. The semiconductor industry is at a juncture where significant increase in manufacturing cost is foreseen to sustain the past trend of dimensional scaling. At N10 and N7 technology nodes, the industry is struggling to find a cost-friendly solution. At a device level, technologists have come up with novel devices (finFET, Gate-All-Around), material innovations (SiGe, Ge) to boost performance and reduce power consumption. On the other hand, from the patterning side, the relative slow ramp-up of alternative lithography technologies like EUVL and DSA pushes the industry to adopt a severely multi-patterning-based solution. Both of these technological transformations have a big impact on die yield and eventually die cost. This paper is aimed to analyze the impact on manufacturing cost to keep the Moore's law alive. We have proposed and analyzed various patterning schemes that can enable cost-friendly scaling. We evaluated the impact of EUVL introduction on tackling the high cost of manufacturing. The primary objective of this paper is to maintain Moore's scaling from a patterning perspective and analyzing EUV lithography introduction at a die level.

  2. The Preemptive Stocker Dispatching Rule of Automatic Material Handling System in 300 mm Semiconductor Manufacturing Factories

    NASA Astrophysics Data System (ADS)

    Wang, C. N.; Lin, H. S.; Hsu, H. P.; Wang, Yen-Hui; Chang, Y. P.

    2016-04-01

    The integrated circuit (IC) manufacturing industry is one of the biggest output industries in this century. The 300mm wafer fabs is the major fab size of this industry. The automatic material handling system (AMHS) has become one of the most concerned issues among semiconductor manufacturers. The major lot delivery of 300mm fabs is used overhead hoist transport (OHT). The traffic jams are happened frequently due to the wide variety of products and big amount of OHTs moving in the fabs. The purpose of this study is to enhance the delivery performance of automatic material handling and reduce the delay and waiting time of product transportation for both hot lots and normal lots. Therefore, this study proposes an effective OHT dispatching rule: preemptive stocker dispatching (PSD). Simulation experiments are conducted and one of the best differentiated preemptive rule, differentiated preemptive dispatching (DPD), is used for comparison. Compared with DPD, The results indicated that PSD rule can reduce average variable delivery time of normal lots by 13.15%, decreasing average variable delivery time of hot lots by 17.67%. Thus, the PSD rule can effectively reduce the delivery time and enhance productivity in 300 mm wafer fabs.

  3. Photo-induced transformation process at gold clusters-semiconductor interface: Implications for the complexity of gold clusters-based photocatalysis

    PubMed Central

    Liu, Siqi; Xu, Yi-Jun

    2016-01-01

    The recent thrust in utilizing atomically precise organic ligands protected gold clusters (Au clusters) as photosensitizer coupled with semiconductors for nano-catalysts has led to the claims of improved efficiency in photocatalysis. Nonetheless, the influence of photo-stability of organic ligands protected-Au clusters at the Au/semiconductor interface on the photocatalytic properties remains rather elusive. Taking Au clusters–TiO2 composites as a prototype, we for the first time demonstrate the photo-induced transformation of small molecular-like Au clusters to larger metallic Au nanoparticles under different illumination conditions, which leads to the diverse photocatalytic reaction mechanism. This transformation process undergoes a diffusion/aggregation mechanism accompanied with the onslaught of Au clusters by active oxygen species and holes resulting from photo-excited TiO2 and Au clusters. However, such Au clusters aggregation can be efficiently inhibited by tuning reaction conditions. This work would trigger rational structural design and fine condition control of organic ligands protected-metal clusters-semiconductor composites for diverse photocatalytic applications with long-term photo-stability. PMID:26947754

  4. Photo-induced transformation process at gold clusters-semiconductor interface: Implications for the complexity of gold clusters-based photocatalysis

    NASA Astrophysics Data System (ADS)

    Liu, Siqi; Xu, Yi-Jun

    2016-03-01

    The recent thrust in utilizing atomically precise organic ligands protected gold clusters (Au clusters) as photosensitizer coupled with semiconductors for nano-catalysts has led to the claims of improved efficiency in photocatalysis. Nonetheless, the influence of photo-stability of organic ligands protected-Au clusters at the Au/semiconductor interface on the photocatalytic properties remains rather elusive. Taking Au clusters-TiO2 composites as a prototype, we for the first time demonstrate the photo-induced transformation of small molecular-like Au clusters to larger metallic Au nanoparticles under different illumination conditions, which leads to the diverse photocatalytic reaction mechanism. This transformation process undergoes a diffusion/aggregation mechanism accompanied with the onslaught of Au clusters by active oxygen species and holes resulting from photo-excited TiO2 and Au clusters. However, such Au clusters aggregation can be efficiently inhibited by tuning reaction conditions. This work would trigger rational structural design and fine condition control of organic ligands protected-metal clusters-semiconductor composites for diverse photocatalytic applications with long-term photo-stability.

  5. Analysis of the Finite Precision s-Step Biconjugate Gradient Method

    DTIC Science & Technology

    2014-03-13

    Center for Future Architecture Research, a member of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, and ASPIRE Lab...industrial sponsors and affiliates Intel, Google, Nokia, NVIDIA , Oracle, and Samsung. Any opinions, findings, conclusions, or recommendations in this

  6. IRIS Toxicological Review of Thallium and Compounds (External Review Draft)

    EPA Science Inventory

    Thallium compounds are used in the semiconductor industry, the manufacture of optic lenses and low-melting glass, low-temperature thermometers, alloys, electronic devices, mercury lamps, fireworks, and imitation germs, and clinically as an imaging agent in the diagnosis of certai...

  7. Analyzing Resources of United States Marine Corps for Humanitarian Operations

    DTIC Science & Technology

    2014-08-26

    years in the petrochemical, semiconductor, paper and pulp products, and steel industries, focusing on enabling corporate strategy by using the supply... Disease monitoring in remote areas Accurate information from host nation Clear procedures from DOS Clear areas of responsibility Collaboration

  8. 76 FR 66331 - Investigations Regarding Certifications of Eligibility To Apply for Worker Adjustment Assistance...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-10-26

    ... Semiconductor (Company). Phoenix, AZ 10/14/11 10/06/11 80510 Suntron Corporation Sugar Land, TX........ 10/14/11...- Shreveport, LA........ 10/14/11 10/13/11 Stop). 80515 AI Android Industries Shreveport, LA........ 10/14/11...

  9. SRC: A Model of Industry-University Cooperation.

    ERIC Educational Resources Information Center

    Cavin, Ralph K., III; Phillips, D. Howard

    1988-01-01

    Describes the Semiconductor Research Corporation (SRC), a non-profit research cooperative designed to conduct research in the field of integrated circuits, principally in U.S. universities, with membership restricted to U.S.-owned companies. Analyzes SRC's impact on the U.S. educational system. (TW)

  10. The uses of Man-Made diamond in wafering applications

    NASA Technical Reports Server (NTRS)

    Fallon, D. B.

    1982-01-01

    The continuing, rapid growth of the semiconductor industry requires the involvement of several specialized industries in the development of special products geared toward the unique requirements of this new industry. A specialized manufactured diamond to meet various material removal needs was discussed. The area of silicon wafer slicing has presented yet anothr challenge and it is met most effectively. The history, operation, and performance of Man-Made diamond and particularly as applied to silicon wafer slicing is discussed. Product development is underway to come up with a diamond specifically for sawing silicon wafers on an electroplated blade.

  11. 7/5nm logic manufacturing capabilities and requirements of metrology

    NASA Astrophysics Data System (ADS)

    Bunday, Benjamin; Bello, A. F.; Solecky, Eric; Vaid, Alok

    2018-03-01

    This paper will provide an update to previous works [2][4][9] to our view of the future for in-line high volume manufacturing (HVM) metrology for the semiconductor industry, concentrating on logic technology for foundries. First, we will review of the needs of patterned defect, critical dimensional (CD/3D), overlay and films metrology, and present the extensive list of applications for which metrology solutions are needed. We will then update the industry's progress towards addressing gating technical limits of the most important of these metrology solutions, highlighting key metrology technology gaps requiring industry attention and investment.

  12. A Computational Chemistry Database for Semiconductor Processing

    NASA Technical Reports Server (NTRS)

    Jaffe, R.; Meyyappan, M.; Arnold, J. O. (Technical Monitor)

    1998-01-01

    The concept of 'virtual reactor' or 'virtual prototyping' has received much attention recently in the semiconductor industry. Commercial codes to simulate thermal CVD and plasma processes have become available to aid in equipment and process design efforts, The virtual prototyping effort would go nowhere if codes do not come with a reliable database of chemical and physical properties of gases involved in semiconductor processing. Commercial code vendors have no capabilities to generate such a database, rather leave the task to the user of finding whatever is needed. While individual investigations of interesting chemical systems continue at Universities, there has not been any large scale effort to create a database. In this presentation, we outline our efforts in this area. Our effort focuses on the following five areas: 1. Thermal CVD reaction mechanism and rate constants. 2. Thermochemical properties. 3. Transport properties.4. Electron-molecule collision cross sections. and 5. Gas-surface interactions.

  13. Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

    NASA Astrophysics Data System (ADS)

    John, J.; Prajapati, V.; Vermang, B.; Lorenz, A.; Allebe, C.; Rothschild, A.; Tous, L.; Uruena, A.; Baert, K.; Poortmans, J.

    2012-08-01

    Bulk crystalline Silicon solar cells are covering more than 85% of the world's roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF) technology has been developed in the 90's and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating), junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell). While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si) in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

  14. Ergonomic risk factors of work processes in the semiconductor industry in Peninsular Malaysia.

    PubMed

    Chee, Heng-Leng; Rampal, Krishna Gopal; Chandrasakaran, Abherhame

    2004-07-01

    A cross-sectional survey of semiconductor factories was conducted to identify the ergonomic risk factors in the work processes, the prevalence of body pain among workers, and the relationship between body pain and work processes. A total of 906 women semiconductor workers took part in the study. In wafer preparation and polishing, a combination of lifting weights and prolonged standing might have led to high pain prevalences in the low back (35.0% wafer preparation, 41.7% wafer polishing) and lower limbs (90.0% wafer preparation, 66.7% wafer polishing). Semiconductor front of line workers, who mostly walked around to operate machines in clean rooms, had the lowest prevalences of body pain. Semiconductor assembly middle of line workers, especially the molding workers, who did frequent lifting, had high pain prevalences in the neck/shoulders (54.8%) and upper back (43.5 %). In the semiconductor assembly end of line work section, chip inspection workers who were exposed to prolonged sitting without back support had high prevalences of neck/shoulder (62.2%) and upper back pain (50.0%), while chip testing workers who had to climb steps to load units had a high prevalence of lower limb pain (68.0%). Workers in the assembly of electronic components, carrying out repetitive tasks with hands and fingers, and standing in awkward postures had high pain prevalences in the neck/shoulders (61.5%), arms (38.5%), and hands/wrists (30.8%).

  15. Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor Melts

    NASA Technical Reports Server (NTRS)

    Li, C.; Ban, H.; Lin, B.; Scripa, R. N.; Su, C.-H.; Lehoczky, S. L.

    2004-01-01

    The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.

  16. Titanium-dioxide nanotube p-n homojunction diode

    NASA Astrophysics Data System (ADS)

    Alivov, Yahya; Ding, Yuchen; Singh, Vivek; Nagpal, Prashant

    2014-12-01

    Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO2) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO2 nanotubes p-n homojunction. This TiO2:N/TiO2:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of -5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.

  17. Functional carbon nitride materials — design strategies for electrochemical devices

    NASA Astrophysics Data System (ADS)

    Kessler, Fabian K.; Zheng, Yun; Schwarz, Dana; Merschjann, Christoph; Schnick, Wolfgang; Wang, Xinchen; Bojdys, Michael J.

    2017-06-01

    In the past decade, research in the field of artificial photosynthesis has shifted from simple, inorganic semiconductors to more abundant, polymeric materials. For example, polymeric carbon nitrides have emerged as promising materials for metal-free semiconductors and metal-free photocatalysts. Polymeric carbon nitride (melon) and related carbon nitride materials are desirable alternatives to industrially used catalysts because they are easily synthesized from abundant and inexpensive starting materials. Furthermore, these materials are chemically benign because they do not contain heavy metal ions, thereby facilitating handling and disposal. In this Review, we discuss the building blocks of carbon nitride materials and examine how strategies in synthesis, templating and post-processing translate from the molecular level to macroscopic properties, such as optical and electronic bandgap. Applications of carbon nitride materials in bulk heterojunctions, laser-patterned memory devices and energy storage devices indicate that photocatalytic overall water splitting on an industrial scale may be realized in the near future and reveal a new avenue of 'post-silicon electronics'.

  18. Emerging technologies for high performance infrared detectors

    NASA Astrophysics Data System (ADS)

    Tan, Chee Leong; Mohseni, Hooman

    2018-01-01

    Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

  19. Polycrystalline silicon availability for photovoltaic and semiconductor industries

    NASA Technical Reports Server (NTRS)

    Ferber, R. R.; Costogue, E. N.; Pellin, R.

    1982-01-01

    Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

  20. An ergonomics study of a semiconductors factory in an IDC for improvement in occupational health and safety.

    PubMed

    Bin, Wong Saw; Richardson, Stanley; Yeow, Paul H P

    2010-01-01

    The study aimed to conduct an ergonomic intervention on a conventional line (CL) in a semiconductor factory in Malaysia, an industrially developing country (IDC), to improve workers' occupational health and safety (OHS). Low-cost and simple (LCS) ergonomics methods were used (suitable for IDCs), e.g., subjective assessment, direct observation, use of archival data and assessment of noise. It was found that workers were facing noise irritation, neck and back pains and headache in the various processes in the CL. LCS ergonomic interventions to rectify the problems included installing noise insulating covers, providing earplugs, installing elevated platforms, slanting visual display terminals and installing extra exhaust fans. The interventions cost less than 3 000 USD but they significantly improved workers' OHS, which directly correlated with an improvement in working conditions and job satisfaction. The findings are useful in solving OHS problems in electronics industries in IDCs as they share similar manufacturing processes, problems and limitations.

  1. Does your SEM really tell the truth?--How would you know? Part 1.

    PubMed

    Postek, Michael T; Vladár, András E

    2013-01-01

    The scanning electron microscope (SEM) has gone through a tremendous evolution to become a critical tool for many and diverse scientific and industrial applications. The high resolution of the SEM is especially suited for both qualitative and quantitative applications especially for nanotechnology and nanomanufacturing. Quantitatively, measurement, or metrology is one of the main uses. It is likely that one of the first questions asked before even the first scanning electron micrograph was ever recorded was: "… how big is that?" The quality of that answer has improved a great deal over the past few years especially since today these instruments are being used as a primary measurement tool on semiconductor processing lines to monitor the manufacturing processes. The well-articulated needs of semiconductor production prompted a rapid evolution of the instrument and its capabilities. Over the past 20 years or so, instrument manufacturers, through substantial semiconductor industry investment of research and development (R&D) money, have vastly improved the performance of these instruments. All users have benefited from this investment, especially where quantitative measurements with an SEM are concerned. But, how good are these data? This article discusses some of the most important aspects and larger issues associated with imaging and measurements with the SEM that every user should know, and understand before any critical quantitative work is attempted. © Wiley Periodicals, Inc.

  2. Identifying airborne metal particles sources near an optoelectronic and semiconductor industrial park

    NASA Astrophysics Data System (ADS)

    Chen, Ho-Wen; Chen, Wei-Yea; Chang, Cheng-Nan; Chuang, Yen-Hsun; Lin, Yu-Hao

    2016-06-01

    The recently developed Central Taiwan Science Park (CTSP) in central Taiwan is home to an optoelectronic and semiconductor industrial cluster. Therefore, exploring the elemental compositions and size distributions of airborne particles emitted from the CTSP would help to prevent pollution. This study analyzed size-fractionated metal-rich particle samples collected in upwind and downwind areas of CTSP during Jan. and Oct. 2013 by using micro-orifice uniform deposited impactor (MOUDI). Correlation analysis, hierarchical cluster analysis and particle mass-size distribution analysis are performed to identify the source of metal-rich particle near the CTSP. Analyses of elemental compositions and particle size distributions emitted from the CTSP revealed that the CTSP emits some metals (V, As, In Ga, Cd and Cu) in the ultrafine particles (< 1 μm). The statistical analysis combines with the particle mass-size distribution analysis could provide useful source identification information. In airborne particles with the size of 0.32 μm, Ga could be a useful pollution index for optoelectronic and semiconductor emission in the CTSP. Meanwhile, the ratios of As/Ga concentration at the particle size of 0.32 μm demonstrates that humans near the CTSP would be potentially exposed to GaAs ultrafine particles. That is, metals such as Ga and As and other metals that are not regulated in Taiwan are potentially harmful to human health.

  3. Magnesium Oxide (MgO) pH-sensitive Sensing Membrane in Electrolyte-Insulator-Semiconductor Structures with CF4 Plasma Treatment.

    PubMed

    Kao, Chyuan-Haur; Chang, Chia Lung; Su, Wei Ming; Chen, Yu Tzu; Lu, Chien Cheng; Lee, Yu Shan; Hong, Chen Hao; Lin, Chan-Yu; Chen, Hsiang

    2017-08-03

    Magnesium oxide (MgO) sensing membranes in pH-sensitive electrolyte-insulator-semiconductor structures were fabricated on silicon substrate. To optimize the sensing capability of the membrane, CF 4 plasma was incorporated to improve the material quality of MgO films. Multiple material analyses including FESEM, XRD, AFM, and SIMS indicate that plasma treatment might enhance the crystallization and increase the grain size. Therefore, the sensing behaviors in terms of sensitivity, linearity, hysteresis effects, and drift rates might be improved. MgO-based EIS membranes with CF 4 plasma treatment show promise for future industrial biosensing applications.

  4. A superhard sp3 microporous carbon with direct bandgap

    NASA Astrophysics Data System (ADS)

    Pan, Yilong; Xie, Chenlong; Xiong, Mei; Ma, Mengdong; Liu, Lingyu; Li, Zihe; Zhang, Shuangshuang; Gao, Guoying; Zhao, Zhisheng; Tian, Yongjun; Xu, Bo; He, Julong

    2017-12-01

    Carbon allotropes with distinct sp, sp2, and sp3 hybridization possess various different properties. Here, a novel all-sp3 hybridized tetragonal carbon, namely the P carbon, was predicted by the evolutionary particle swarm structural search. It demonstrated a low density among all-sp3 carbons, due to the corresponding distinctive microporous structure. P carbon is thermodynamically stable than the known C60 and could be formed through the single-walled carbon nanotubes (SWCNTs) compression. P carbon is a direct bandgap semiconductor displaying a strong and superhard nature. The unique combination of electrical and mechanical properties constitutes P carbon a potential superhard material for semiconductor industrial fields.

  5. Emissions of Tetrafluoromethane (CF4) and Hexafluoroethane (C2F6) from East Asian Aluminum and Semiconductor Industries

    NASA Astrophysics Data System (ADS)

    Kim, J.; Li, S.; Muhle, J.; Fang, X.; Manning, A. J.; Arnold, T.; Park, S.; Park, M.; Saito, T.; Yokouchi, Y.; Stohl, A.; Weiss, R. F.; Kim, K.

    2013-12-01

    Tetrafluoromethane (CF4) and Hexafluoroethane (C2F6) are among the most potent greenhouse gases (GHGs), with atmospheric lifetimes of 50,000 and 10,000 years and 100-year Global Warming Potentials of 7,490 and 12,200, respectively. The Chinese aluminum smelting (AL) industry, accounting for 39% of the global aluminum production in 2010, has become a significant emitter of these compounds to the atmosphere, . The AL industry has estimated its Chinese emissions averaged over 2008-2010 at 1.4 Gg/yr of CF4 and 0.06 Gg/yr of C2F6. In this study we combine East Asian measurements of C2F6 at Gosan (Jeju Island, Korea), Hateruma, and Ochi-Ishi (Japan) and of CF4 at Gosan, using inversion techniques and two Lagrangian particle dispersion models (FLEXPART and NAME), to estimate the emissions of these two compounds from China and East Asia. Our results yield total emissions from China for the 2008-2010 period of approximately 4 × 0.5 Gg/yr for CF4 and 0.8 × 0.1 Gg/yr for C2F6. These results may be reconciled if emissions of these compounds from China's semiconductor (SC) industry are larger than currently estimated. However, evidence presented in the analysis of the inversion results and in the C2F6/CF4 emission ratios observed for China suggest that China's AL industry emissions are likely to be the dominant source of the discrepancy between reported emissions and those inferred from atmospheric measurements. As the AL and SC industries evolve toward new manufacturing technologies that reduce GHG emissions, continued and improved atmospheric measurements and modeling in this region will be useful in assessing the effectiveness of these changes.

  6. Electronic Properties of III-V Semiconductor Interfaces.

    DTIC Science & Technology

    1980-11-30

    ONG . REPORT NUMBER S.B CONTRACT 0R GRANT NUMSERa) S. PERFORMING ORGANIZATION NAMIE AND ADDRESS 10. PROGRAM EL.EMIENT. PROJECT. TASK AREA G WORK UNIT...Fred Nedoluha, Dave Collins, Larry Mainers, Derek Lile, and Carl Zeisse. And several of the samples studied were supplied by industrial colleagues

  7. High Definition Television: A New Challenge for Telecommunication Policy.

    ERIC Educational Resources Information Center

    Hongcharu, Boonchai

    The telecommunications industry has now entered the most critical period of evolution in television technology since the introduction of color television. The transition to high definition television (HDTV), with related technologies such as semiconductors and computers, would mean a multi-billion dollar business for the telecommunications…

  8. 15 CFR Supplement No. 3 to Part 752 - Instructions on Completing Form BIS-752 “Statement by Consignee In Support of Special...

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... OF INDUSTRY AND SECURITY, DEPARTMENT OF COMMERCE EXPORT ADMINISTRATION REGULATIONS SPECIAL... results in a change of identity of the U.S.-item (e.g., U.S.-origin semiconductor devices are included in...

  9. International comparison CCQM-K113—noble gas mixture

    NASA Astrophysics Data System (ADS)

    Lim, Jeong Sik; Lee, Jinbok; Moon, Dongmin; Tshilongo, James; Qiao, Han; Shuguo, Hu; Tiqiang, Zhang; Kelley, Michael E.; Rhoderick, George C.; Konopelko, L. A.; Kolobova, A. V.; Vasserman, I. I.; Zavyalov, S. V.; Gromova, E. V.; Efremova, O. V.

    2017-01-01

    Noble gases are one of the key elements used in the various processes of the bulbs industry, automotive industry, space industry, lasers industry, display industry as well as the semiconductor industry. Considering continuous growth, the provision of a reliable standard is required for those industries to improve their productivity. In this report, a result of the key comparison, CCQM-K113: noble gas mixture, is presented. Nominal amount-of-substance fractions of argon, neon, krypton, and xenon in helium are 20, 10, 2, and 1 cmol/mol, respectively. Main text To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the CCQM, according to the provisions of the CIPM Mutual Recognition Arrangement (CIPM MRA).

  10. On-product overlay enhancement using advanced litho-cluster control based on integrated metrology, ultra-small DBO targets and novel corrections

    NASA Astrophysics Data System (ADS)

    Bhattacharyya, Kaustuve; Ke, Chih-Ming; Huang, Guo-Tsai; Chen, Kai-Hsiung; Smilde, Henk-Jan H.; Fuchs, Andreas; Jak, Martin; van Schijndel, Mark; Bozkurt, Murat; van der Schaar, Maurits; Meyer, Steffen; Un, Miranda; Morgan, Stephen; Wu, Jon; Tsai, Vincent; Liang, Frida; den Boef, Arie; ten Berge, Peter; Kubis, Michael; Wang, Cathy; Fouquet, Christophe; Terng, L. G.; Hwang, David; Cheng, Kevin; Gau, TS; Ku, Y. C.

    2013-04-01

    Aggressive on-product overlay requirements in advanced nodes are setting a superior challenge for the semiconductor industry. This forces the industry to look beyond the traditional way-of-working and invest in several new technologies. Integrated metrology2, in-chip overlay control, advanced sampling and process correction-mechanism (using the highest order of correction possible with scanner interface today), are a few of such technologies considered in this publication.

  11. Tool Efficiency Analysis model research in SEMI industry

    NASA Astrophysics Data System (ADS)

    Lei, Ma; Nana, Zhang; Zhongqiu, Zhang

    2018-06-01

    One of the key goals in SEMI industry is to improve equipment through put and ensure equipment production efficiency maximization. This paper is based on SEMI standards in semiconductor equipment control, defines the transaction rules between different tool states, and presents a TEA system model which is to analysis tool performance automatically based on finite state machine. The system was applied to fab tools and verified its effectiveness successfully, and obtained the parameter values used to measure the equipment performance, also including the advices of improvement.

  12. Low-Cost and Large-Area Electronics, Roll-to-Roll Processing and Beyond

    NASA Astrophysics Data System (ADS)

    Wiesenhütter, Katarzyna; Skorupa, Wolfgang

    In the following chapter, the authors conduct a literature survey of current advances in state-of-the-art low-cost, flexible electronics. A new emerging trend in the design of modern semiconductor devices dedicated to scaling-up, rather than reducing, their dimensions is presented. To realize volume manufacturing, alternative semiconductor materials with superior performance, fabricated by innovative processing methods, are essential. This review provides readers with a general overview of the material and technology evolution in the area of macroelectronics. Herein, the term macroelectronics (MEs) refers to electronic systems that can cover a large area of flexible media. In stark contrast to well-established micro- and nano-scale semiconductor devices, where property improvement is associated with downscaling the dimensions of the functional elements, in macroelectronic systems their overall size defines the ultimate performance (Sun and Rogers in Adv. Mater. 19:1897-1916, 2007). The major challenges of large-scale production are discussed. Particular attention has been focused on describing advanced, short-term heat treatment approaches, which offer a range of advantages compared to conventional annealing methods. There is no doubt that large-area, flexible electronic systems constitute an important research topic for the semiconductor industry. The ability to fabricate highly efficient macroelectronics by inexpensive processes will have a significant impact on a range of diverse technology sectors. A new era "towards semiconductor volume manufacturing…" has begun.

  13. High-Temperature Electronics: A Role for Wide Bandgap Semiconductors?

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Okojie, Robert S.; Chen, Liang-Yu

    2002-01-01

    It is increasingly recognized that semiconductor based electronics that can function at ambient temperatures higher than 150 C without external cooling could greatly benefit a variety of important applications, especially-in the automotive, aerospace, and energy production industries. The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300 C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog very large scale integrated circuits in this temperature range. However, practical operation of silicon power devices at ambient temperatures above 200 C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once the technology for realizing these devices become sufficiently developed that they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

  14. Patterning roadmap: 2017 prospects

    NASA Astrophysics Data System (ADS)

    Neisser, Mark

    2017-06-01

    Road mapping of semiconductor chips has been underway for over 20 years, first with the International Technology Roadmap for Semiconductors (ITRS) roadmap and now with the International Roadmap for Devices and Systems (IRDS) roadmap. The original roadmap was mostly driven bottom up and was developed to ensure that the large numbers of semiconductor producers and suppliers had good information to base their research and development on. The current roadmap is generated more top-down, where the customers of semiconductor chips anticipate what will be needed in the future and the roadmap projects what will be needed to fulfill that demand. The More Moore section of the roadmap projects that advanced logic will drive higher-resolution patterning, rather than memory chips. Potential solutions for patterning future logic nodes can be derived as extensions of `next-generation' patterning technologies currently under development. Advanced patterning has made great progress, and two `next-generation' patterning technologies, EUV and nanoimprint lithography, have potential to be in production as early as 2018. The potential adoption of two different next-generation patterning technologies suggests that patterning technology is becoming more specialized. This is good for the industry in that it lowers overall costs, but may lead to slower progress in extending any one patterning technology in the future.

  15. Emission characteristics of volatile organic compounds from semiconductor manufacturing.

    PubMed

    Chein, HungMin; Chen, Tzu Ming

    2003-08-01

    A huge amount of volatile organic compounds (VOCs) is produced and emitted with waste gases from semiconductor manufacturing processes, such as cleaning, etching, and developing. VOC emissions from semiconductor factories located at Science-Based Industrial Park, Hsin-chu, Taiwan, were measured and characterized in this study. A total of nine typical semiconductor fabricators (fabs) were monitored over a 12-month period (October 2000-September 2001). A flame ionization analyzer was employed to measure the VOC emission rate continuously in a real-time fashion. The amount of chemical use was adopted from the data that were reported to the Environmental Protection Bureau in Hsin-chu County as per the regulation of the Taiwan Environmental Protection Administration. The VOC emission factor, defined as the emission rate (kg/month) divided by the amount of chemical use (L/month), was determined to be 0.038 +/- 0.016 kg/L. A linear regression equation is proposed to fit the data with the correlation coefficient (R2)=0.863. The emission profiles of VOCs, which were drawn using the gas chromatograph/mass spectrometer analysis method, show that isopropyl alcohol is the dominant compound in most of the fabs.

  16. Progress in ion torrent semiconductor chip based sequencing.

    PubMed

    Merriman, Barry; Rothberg, Jonathan M

    2012-12-01

    In order for next-generation sequencing to become widely used as a diagnostic in the healthcare industry, sequencing instrumentation will need to be mass produced with a high degree of quality and economy. One way to achieve this is to recast DNA sequencing in a format that fully leverages the manufacturing base created for computer chips, complementary metal-oxide semiconductor chip fabrication, which is the current pinnacle of large scale, high quality, low-cost manufacturing of high technology. To achieve this, ideally the entire sensory apparatus of the sequencer would be embodied in a standard semiconductor chip, manufactured in the same fab facilities used for logic and memory chips. Recently, such a sequencing chip, and the associated sequencing platform, has been developed and commercialized by Ion Torrent, a division of Life Technologies, Inc. Here we provide an overview of this semiconductor chip based sequencing technology, and summarize the progress made since its commercial introduction. We described in detail the progress in chip scaling, sequencing throughput, read length, and accuracy. We also summarize the enhancements in the associated platform, including sample preparation, data processing, and engagement of the broader development community through open source and crowdsourcing initiatives. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Past and Present of the Chinese and Korean Trainees and Survival of a Small Manufacturing Industry

    NASA Astrophysics Data System (ADS)

    Nishihata, Mikio

    In 1973, the author established the Nippon Bell Parts Co., Ltd. in Funabashi-city under his estimation of the advances in communication, information, semiconductor and automotive industries, then he has focused on R&D and developed the manufacturing of precise parts. During the past 30 years, he has himself experienced the importance of the mutual exchange between Japan and China and Korea, for keeping the human capability as well as for the management and the technical development to avoid a bankruptcy. The author is intentionally acting for the education of craftsmen in small and medium-sized manufacturing industries.

  18. 75 FR 20003 - Notice Pursuant to the National Cooperative Research and Production Act of 1993-Wireless...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-16

    ... circumstances. Specifically, Freescale Semiconductor, Inc., Austin, TX; and Cooper Industries, Houston, TX have... DEPARTMENT OF JUSTICE Antitrust Division Notice Pursuant to the National Cooperative Research and... 12, 2010, pursuant to Section 6(a) of the National Cooperative Research and Production Act of 1993...

  19. Speeding Products to Market: Waiting Time to First Product Introduction in New Firms.

    ERIC Educational Resources Information Center

    Schoonhoven, Claudia Bird; And Others

    1990-01-01

    Using event-history analysis techniques, a longitudinal study of the semiconductor industry found that substantial technological innovation lengthens development times and reduces the speed with which first products reach the marketplace. Organizations that undertook lower levels of technological innovation had relatively lower monthly…

  20. Optimizing Resources of United States Navy for Humanitarian Operations

    DTIC Science & Technology

    2014-08-26

    advised U.S. and European firms for several years in the petrochemical, semiconductor, paper and pulp products, and steel industries, focusing on enabling...roads are not traversable and bridges have collapsed. There is no potable water available. There is the fear of outbreak of diseases like cholera and

  1. The Development and Institutionalization of Subunit Power in Organizations.

    ERIC Educational Resources Information Center

    Boeker, Warren

    1989-01-01

    Examines the effects of founding events on the evolution of subunit importance in the semiconductor industry from 1958 to 1985. Distributions of power and subunit importance represent not only influences of current conditions, but also vestiges of earlier events, including the institution's founding. Includes 55 references. (MLH)

  2. Architectural Innovation: The Reconfiguration of Existing Product Technologies and the Failure of Established Firms.

    ERIC Educational Resources Information Center

    Henderson, Rebecca M.; Clark, Kim B.

    1990-01-01

    Using an empirical study of the semiconductor photolithographic alignment equipment industry, this paper shows that architectural innovations destroy the usefulness of established firms' architectural knowledge. Because this knowledge is embedded in the firms' structure and information-processing procedures, the destruction is hard to detect.…

  3. Workplace Skills in Practice. Case Studies of Technical Work.

    ERIC Educational Resources Information Center

    Stasz, Cathleen; And Others

    A study was conducted to explore skills and work-related dispositions in technical work. It used a sociocultural approach to examine skills in seven target jobs in worksites representing diverse industries--health care, traffic management, transportation, and semiconductor manufacturing. It explored employers' strategies for obtaining the skills…

  4. 77 FR 32010 - Applications (Classification, Advisory, and License) and Documentation

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-05-31

    ... DEPARTMENT OF COMMERCE Bureau of Industry and Security 15 CFR Part 748 Applications (Classification, Advisory, and License) and Documentation CFR Correction 0 In Title 15 of the Code of Federal... fourth column of the table, the two entries for ``National Semiconductor Hong Kong Limited'' are removed...

  5. POLLUTION PREVENTION IN THE SEMICONDUCTOR INDUSTRY THROUGH RECOVERY AND RECYCLING OF GALLIUM AND ARSENIC FROM GAAS POLISHING WASTES

    EPA Science Inventory

    A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

  6. Tse computers. [ultrahigh speed optical processing for two dimensional binary image

    NASA Technical Reports Server (NTRS)

    Schaefer, D. H.; Strong, J. P., III

    1977-01-01

    An ultra-high-speed computer that utilizes binary images as its basic computational entity is being developed. The basic logic components perform thousands of operations simultaneously. Technologies of the fiber optics, display, thin film, and semiconductor industries are being utilized in the building of the hardware.

  7. Advanced Electronics Technologies: Challenges for Radiation Effects Testing, Modeling, and Mitigation

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Cohn, Lewis M.

    2005-01-01

    Emerging Electronics Technologies include: 1) Changes in the commercial semiconductor world; 2) Radiation Effects Sources (A sample test constraint); and 3) Challenges to Radiation Testing and Modeling: a) IC Attributes-Radiation Effects Implication b) Fault Isolation c) Scaled Geometry d) Speed e) Modeling Shortfall f) Knowledge Status

  8. The need for LWR metrology standardization: the imec roughness protocol

    NASA Astrophysics Data System (ADS)

    Lorusso, Gian Francesco; Sutani, Takumichi; Rutigliani, Vito; van Roey, Frieda; Moussa, Alain; Charley, Anne-Laure; Mack, Chris; Naulleau, Patrick; Constantoudis, Vassilios; Ikota, Masami; Ishimoto, Toru; Koshihara, Shunsuke

    2018-03-01

    As semiconductor technology keeps moving forward, undeterred by the many challenges ahead, one specific deliverable is capturing the attention of many experts in the field: Line Width Roughness (LWR) specifications are expected to be less than 2nm in the near term, and to drop below 1nm in just a few years. This is a daunting challenge and engineers throughout the industry are trying to meet these targets using every means at their disposal. However, although current efforts are surely admirable, we believe they are not enough. The fact is that a specification has a meaning only if there is an agreed methodology to verify if the criterion is met or not. Such a standardization is critical in any field of science and technology and the question that we need to ask ourselves today is whether we have a standardized LWR metrology or not. In other words, if a single reference sample were provided, would everyone measuring it get reasonably comparable results? We came to realize that this is not the case and that the observed spread in the results throughout the industry is quite large. In our opinion, this makes the comparison of LWR data among institutions, or to a specification, very difficult. In this paper, we report the spread of measured LWR data across the semiconductor industry. We investigate the impact of image acquisition, measurement algorithm, and frequency analysis parameters on LWR metrology. We review critically some of the International Technology Roadmap for Semiconductors (ITRS) metrology guidelines (such as measurement box length larger than 2μm and the need to correct for SEM noise). We compare the SEM roughness results to AFM measurements. Finally, we propose a standardized LWR measurement protocol - the imec Roughness Protocol (iRP) - intended to ensure that every time LWR measurements are compared (from various sources or to specifications), the comparison is sensible and sound. We deeply believe that the industry is at a point where it is imperative to guarantee that when talking about a critical parameter such like LWR, everyone speaks the same language, which is not currently the case.

  9. Dye-Sensitized Approaches to Photovoltaics

    NASA Astrophysics Data System (ADS)

    Grätzel, Michael

    2008-03-01

    Sensitization of wide band-gap semiconductors to photons of energy less than the band-gap is a key step in two technically important processes - panchromatic photography and photoelectrochemical solar cells. In both cases the photosensitive species is not the semiconductor - silver halide or metal oxide - but rather an electrochemically active dye. The gap between the highest occupied molecular level (HOMO) and the lowest unoccupied molecular level (LUMO) is less than the band-gap of the semiconductor with which it is associated. It can therefore absorb light of a wavelength longer than that to which the semiconductor itself is sensitive. The electrochemical process is initiated when the dye molecule relaxes from its photoexcited level by electron injection into the semiconductor, which therefore acts as a photoanode. If the dye is in contact with a redox electrolyte, the negative charge represented by the lost electron can be recovered from the reduced state of the redox system, which in return is regenerated by charge transfer from a cathode. An external load completes the electrical circuit. The system therefore represents a conversion of the energy of absorbed photons into an electrical current by a regenerative device in every functional respect analogous to a solid-state photovoltaic cell. As in any engineering system, choice of materials, their optimization and their synergy are essential to efficient operation. While a semiconductor-electrolyte contact is analogous to a Schottky contact, in that a barrier is established between two materials of different conduction mechanism, with the possibility of optical absorption, charge carrier pair generation and separation, it should be remembered that the photogenerated valence band hole in the semiconductor represents a powerful oxidizing agent. Given that the band-gap is related to the strength and therefore the stability of chemical bonding within the semiconductor, for narrow-gap materials the most likely reaction of such a hole is the photocorrosion of the semiconductor itself. However, only relatively narrow band-gap materials have an effective optical absorption through the visible spectrum, towards and into the infra-red. Materials with an optimal band-gap match to the solar spectrum, of the order of 1.5eV, are therefore electrochemically unstable. A stable photoelectrochemical cell, without some process of optical sensitization, and necessarily using a wide-gap semiconductor is sensitive only to the ultra-violet limit of the visible spectrum. Over recent years a suitable combination of semiconductor and sensitizer has been identified and optimized, so that now a solar spectrum conversion efficiency of over 11% has been verified in a sensitized photoelectrochemical device. One key to such an efficient system is the suppression of recombination losses. When the excited dye relaxes by electron loss, the separated charge carriers find themselves on opposite sides of a phase barrier -- the electron within the solid-state semiconductor, the positive charge externally, in association with the dye molecule. There is no valence---band involvement in the process, so the system represents a majority-carrier device, avoiding one of the major loss mechanisms in conventional photovoltaics. In consequence also a highly-disordered, even porous, semiconductor structure is acceptable, enabling surface adsorption of a sufficient concentration of the dye to permit total optical absorption of incident light of photon energy greater than the HOMO-LUMO gap of the dye molecule. The accepted wide-band semiconductor for photoelectrochemical applications is titanium dioxide in the anatase crystal structure. The size of the nanocrystals making up the semiconductor photoanode can be determined by hydrothermal processing of a precursor sol, and the film can be deposited on a transparent conducting oxide (TCO) substrate by any convenient thin-film process such as screen printing or tape casting. The preferred dye system is inspired by the natural processes involving chlorophyll, the coloring material in plants on which all earthly life depends. Chlorophyll is an organometallic dye, with a metal ion, Mg, within a porphyrin cage of nitrogen atoms. The synthetic chemist of course can select any convenient metal within the periodic table, and experience shows that ruthenium has the optimal properties expected. A ruthenium-pyridyl complex provides the chromophore of the dye, with the HOMO-LUMO gap, and thence the absorption spectrum bring modified by substitution with thiocyanide groups. Chemisorptive attachment of the dye to the metal oxide surface is obtained by carboxyl groups attached to the pyridyl components. The energetics of the dye is such that the LUMO level is just above the conduction band edge of the semiconductor, enabling relaxation by electron injection as required. A satisfactory electroactive dye structure, with good attachment properties and a wide optical absorption spectrum is therefore a sophisticated molecular engineering product. The electrolyte is also an optimized electrochemical system. The basic redox behavior is provided by the iodine/iodide system, with the advantage that the ions, both oxidized and reduced are relatively small, and therefore mobile in the supporting electrolyte. Energy losses due to slow diffusion are minimized. Early experiments used aqueous electrolytes, though with limited cell lifetime due to hydrolysis of the chemisorptive dye---semiconductor bond. A wide range of organic systems were therefore investigated, with the present favored formulation being based on imidazole salts. These have the additional advantage of low vapor pressure, very necessary as the photoactive sites under mid---day sun illumination may reach 80 C or higher. Low losses at the cathode counterelectrode are also a requirement for cell efficiency. The cathode is not necessarily transparent, and prototype cells on thin metal foils have been produced. However a TCO on glass or polymer counterelectrode is widely used. In either case suitable electrocatalytic behavior is required and frequently a nanodispersed Pt precipitated from haxachloride solution is employed. It is by now evident that the achievement of an industrially-competitive sensitized photoelectrochemical solar cell is the result of the optimization of several components, associated obviously with their effective synergy. Each change of a single component has repercussions on the choice and performance of others. However as already mentioned an efficiency of over 11% has now been certified, and a stability of over 14,000 hours under accelerated testing with continuous simulated AM1.5 illumination was recently reported. In consequence there is increasing confidence on the part of industry. Several licensees of EPFL patents on dye---sensitized photovoltaic systems are now preparing for large-scale production. G24 Innovations PLC in Wales is commissioning a manufacturing plant, and Dyesol PLC in Australia is making available the required materials on an industrial scale. In conclusion, then, it can be stated that the DSC system is much more than a fascinating scientific artifact illustrating charge-transfer mechanisms at electrochemical interfaces; an efficiency and reliability with industrial credibility have been demonstrated and verified, and a significant role in competition with other photosystems can be foreseen.

  10. Fundamentals handbook of electrical and computer engineering. Volume 1 Circuits fields and electronics

    NASA Astrophysics Data System (ADS)

    Chang, S. S. L.

    State of the art technology in circuits, fields, and electronics is discussed. The principles and applications of these technologies to industry, digital processing, microwave semiconductors, and computer-aided design are explained. Important concepts and methodologies in mathematics and physics are reviewed, and basic engineering sciences and associated design methods are dealt with, including: circuit theory and the design of magnetic circuits and active filter synthesis; digital signal processing, including FIR and IIR digital filter design; transmission lines, electromagnetic wave propagation and surface acoustic wave devices. Also considered are: electronics technologies, including power electronics, microwave semiconductors, GaAs devices, and magnetic bubble memories; digital circuits and logic design.

  11. Active pixel sensor with intra-pixel charge transfer

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

    1995-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

  12. Active pixel sensor with intra-pixel charge transfer

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

    2003-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

  13. Active pixel sensor with intra-pixel charge transfer

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

    2004-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

  14. Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie

    2015-01-01

    The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.

  15. The prevalence of musculoskeletal problems and risk factors among women assembly workers in the semiconductor industry.

    PubMed

    Chandrasakaran, A; Chee, H L; Rampal, K G; Tan, G L

    2003-12-01

    A cross-sectional study to determine work-related musculoskeletal problems and ergonomic risk factors was conducted among 529 women semiconductor workers. Overall, 83.4% had musculoskeletal symptoms in the last one year. Pain in the back (57.8%), lower leg (48.4%) and shoulder (44.8%) were the three most common musculoskeletal problems. Significant associations were found between prolonged standing and upper and lower leg pain, between prolonged sitting and neck and shoulder pain and between prolonged bending and shoulder arm, back and upper leg pain. The study therefore showed a clear association between work-related musculoskeletal pain and prolonged hours spent in particular postures and movements.

  16. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

    PubMed

    Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

    2015-08-12

    Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

  17. The health impacts of semiconductor production: an epidemiologic review

    PubMed Central

    Kim, Myoung-Hee; Kim, Hyunjoo; Paek, Domyung

    2014-01-01

    Background: Despite concerns over the harmful health effects of semiconductor production, epidemiological studies have shown mixed results. Objectives: We aim to critically appraise epidemiologic studies to date, and to suggest future research and actions to protect workers in semiconductor industry. Methods: Epidemiologic studies were identified through electronic database searches, review of reference lists of relevant published works, and expert consultations, and were narratively reviewed. Results: Most evidence suggests reproductive risks from fabrication jobs, including spontaneous abortion (SAB), congenital malformation, and reduced fertility. Although chemicals have been suspected as causal agents, knowledge of the likely contribution(s) from specific exposures is still limited. Evidence of cancer risk seems to be equivocal. However, the available studies had serious limitations including healthy worker effects (HWEs), information bias, and insufficient power, all of which are associated with underestimation. Nevertheless, excess risks for non-Hodgkin's lymphoma (NHL), leukemia, brain tumor, and breast cancer were observed. Conclusions: Monitoring and innovative research based on international collaboration with a focus on sentinel events are required. PMID:24999845

  18. Rapid reagent-less on-line H2O2 quantification in alkaline semiconductor etching solution, Part 2: Nephelometry application.

    PubMed

    Zlatev, Roumen; Stoytcheva, Margarita; Valdez, Benjamin

    2018-03-01

    A simple and rapid reagent less nephelometric method for on-line H 2 O 2 quantification in semiconductors etching solutions was developed, optimized, characterized and validated. The intensity of the light scattered by the oxygen gas suspension resulted from H 2 O 2 catalytic decomposition by immobilized MnO 2 was registered as analytical response. The influences of the light wave length, the agitation rate, the temperature and the catalyst surface area on the response amplitude were studied and optimization was done. The achieved linear concentration range from 10 to 150mmolL -1 at 0.9835 calibration curve correlation coefficient, precision from 3.65% to 0.95% and response time from 35 to 20s respectively, at sensitivity of 8.01µAmmol -1 L and LOD of 2.9mmolL -1 completely satisfy the semiconductor industry requirements. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. The health impacts of semiconductor production: an epidemiologic review.

    PubMed

    Kim, Myoung-Hee; Kim, Hyunjoo; Paek, Domyung

    2014-01-01

    Despite concerns over the harmful health effects of semiconductor production, epidemiological studies have shown mixed results. We aim to critically appraise epidemiologic studies to date, and to suggest future research and actions to protect workers in semiconductor industry. Epidemiologic studies were identified through electronic database searches, review of reference lists of relevant published works, and expert consultations, and were narratively reviewed. Most evidence suggests reproductive risks from fabrication jobs, including spontaneous abortion (SAB), congenital malformation, and reduced fertility. Although chemicals have been suspected as causal agents, knowledge of the likely contribution(s) from specific exposures is still limited. Evidence of cancer risk seems to be equivocal. However, the available studies had serious limitations including healthy worker effects (HWEs), information bias, and insufficient power, all of which are associated with underestimation. Nevertheless, excess risks for non-Hodgkin's lymphoma (NHL), leukemia, brain tumor, and breast cancer were observed. Monitoring and innovative research based on international collaboration with a focus on sentinel events are required.

  20. QM/QM approach to model energy disorder in amorphous organic semiconductors.

    PubMed

    Friederich, Pascal; Meded, Velimir; Symalla, Franz; Elstner, Marcus; Wenzel, Wolfgang

    2015-02-10

    It is an outstanding challenge to model the electronic properties of organic amorphous materials utilized in organic electronics. Computation of the charge carrier mobility is a challenging problem as it requires integration of morphological and electronic degrees of freedom in a coherent methodology and depends strongly on the distribution of polaron energies in the system. Here we represent a QM/QM model to compute the polaron energies combining density functional methods for molecules in the vicinity of the polaron with computationally efficient density functional based tight binding methods in the rest of the environment. For seven widely used amorphous organic semiconductor materials, we show that the calculations are accelerated up to 1 order of magnitude without any loss in accuracy. Considering that the quantum chemical step is the efficiency bottleneck of a workflow to model the carrier mobility, these results are an important step toward accurate and efficient disordered organic semiconductors simulations, a prerequisite for accelerated materials screening and consequent component optimization in the organic electronics industry.

  1. Strain effects on the work function of an organic semiconductor

    PubMed Central

    Wu, Yanfei; Chew, Annabel R.; Rojas, Geoffrey A.; Sini, Gjergji; Haugstad, Greg; Belianinov, Alex; Kalinin, Sergei V.; Li, Hong; Risko, Chad; Brédas, Jean-Luc; Salleo, Alberto; Frisbie, C. Daniel

    2016-01-01

    Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ∼0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials. PMID:26831362

  2. Strain effects on the work function of an organic semiconductor

    NASA Astrophysics Data System (ADS)

    Wu, Yanfei; Chew, Annabel R.; Rojas, Geoffrey A.; Sini, Gjergji; Haugstad, Greg; Belianinov, Alex; Kalinin, Sergei V.; Li, Hong; Risko, Chad; Brédas, Jean-Luc; Salleo, Alberto; Frisbie, C. Daniel

    2016-02-01

    Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ~0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.

  3. Strain effects on the work function of an organic semiconductor.

    PubMed

    Wu, Yanfei; Chew, Annabel R; Rojas, Geoffrey A; Sini, Gjergji; Haugstad, Greg; Belianinov, Alex; Kalinin, Sergei V; Li, Hong; Risko, Chad; Brédas, Jean-Luc; Salleo, Alberto; Frisbie, C Daniel

    2016-02-01

    Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively with density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ∼0.05% tensile strain along the rubrene π-stacking direction. The results provide the first concrete link between mechanical strain and WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder in soft organic electronic materials.

  4. Oxygen-deficient photostable Cu2O for enhanced visible light photocatalytic activity.

    PubMed

    Singh, Mandeep; Jampaiah, Deshetti; Kandjani, Ahmad E; Sabri, Ylias M; Della Gaspera, Enrico; Reineck, Philipp; Judd, Martyna; Langley, Julien; Cox, Nicholas; van Embden, Joel; Mayes, Edwin L H; Gibson, Brant C; Bhargava, Suresh K; Ramanathan, Rajesh; Bansal, Vipul

    2018-03-29

    Oxygen vacancies in inorganic semiconductors play an important role in reducing electron-hole recombination, which may have important implications in photocatalysis. Cuprous oxide (Cu2O), a visible light active p-type semiconductor, is a promising photocatalyst. However, the synthesis of photostable Cu2O enriched with oxygen defects remains a challenge. We report a simple method for the gram-scale synthesis of highly photostable Cu2O nanoparticles by the hydrolysis of a Cu(i)-triethylamine [Cu(i)-TEA] complex at low temperature. The oxygen vacancies in these Cu2O nanoparticles led to a significant increase in the lifetimes of photogenerated charge carriers upon excitation with visible light. This, in combination with a suitable energy band structure, allowed Cu2O nanoparticles to exhibit outstanding photoactivity in visible light through the generation of electron-mediated hydroxyl (OH˙) radicals. This study highlights the significance of oxygen defects in enhancing the photocatalytic performance of promising semiconductor photocatalysts.

  5. Strain effects on the work function of an organic semiconductor

    DOE PAGES

    Wu, Yanfei; Chew, Annabel R.; Rojas, Geoffrey A.; ...

    2016-02-01

    Establishing fundamental relationships between strain and work function (WF) in organic semiconductors is important not only for understanding the electrical properties of organic thin films, which are subject to both intrinsic and extrinsic strains, but also for developing flexible electronic devices. Here we investigate tensile and compressive strain effects on the WF of rubrene single crystals. Mechanical strain induced by thermal expansion mismatch between the substrate and rubrene is quantified by X-ray diffraction. The corresponding WF change is measured by scanning Kelvin probe microscopy. The WF of rubrene increases (decreases) significantly with in-plane tensile (compressive) strain, which agrees qualitatively withmore » density functional theory calculations. An elastic-to-plastic transition, characterized by a steep rise of the WF, occurs at ~0.05% tensile strain along the rubrene -stacking direction. The results provide the first concrete link between mechanical strain and the WF of an organic semiconductor and have important implications for understanding the connection between structural and electronic disorder (charge traps) in soft organic electronic materials.« less

  6. Narrow-linewidth tunable laser working at 633 nm suitable for industrial interferometry

    NASA Astrophysics Data System (ADS)

    Minh, Tuan Pham; Hucl, Václav; Čížek, Martin; Mikel, Břetislav; Hrabina, Jan; Řeřucha, Šimon; Číp, Ondřej; Lazar, Josef

    2015-05-01

    Semiconductor lasers found a foothold in many fields of human activities, mainly thanks to its small size, low cost and high energy efficiency. Recent methods for accurate distance measurement in industrial practice use principles of laser interferometry, which are based on lasers operating in the visible spectrum. When the laser beam is visible the alignment of the industrial interferometer makes the measuring process easier. Traditional lasers for these purposes for many decades - HeNe gas laser - have superb coherence properties but small tunable range. On the other hand laser diodes are very useful lasers but only if the active layer of the semiconductor equips with a passive selective element that will increase the quality of their own resonator and also prevents the structure of its higher longitudinal modes. The main aim of the work is a design of the laser source based on a new commercial available laser diode with Distributed Bragg Reflector structure, butterfly package and fibre coupled output. The ultra-low noise injection current source, stable temperature controller and supply electronic equipment were developed with us and experimentally tested with this laser for the best performances required of the industrial interferometry field. The work also performs a setup for frequency noise properties investigation with an unbalanced fibre based Mach-Zehnder interferometer and 10 m long fibre spool inserted in the reference arm. The work presents the way to developing the narrow-linewidth operation the DBR laser with the wide tunable range up to more than 1 nm of the operation wavelength at the same time. Both capabilities predetermine this complex setup for the industrial interferometry application as they are the long distance surveying or absolute scale interferometry.

  7. A Solder Based Self Assembly Project in an Introductory IC Fabrication Course

    ERIC Educational Resources Information Center

    Rao, Madhav; Lusth, John C.; Burkett, Susan L.

    2015-01-01

    Integrated circuit (IC) fabrication principles is an elective course in a senior undergraduate and early graduate student's curriculum. Over the years, the semiconductor industry relies heavily on students with developed expertise in the area of fabrication techniques, learned in an IC fabrication theory and laboratory course. The theory course…

  8. Functional organic materials for electronics industries

    NASA Technical Reports Server (NTRS)

    Shibayama, K.; Ono, H.

    1982-01-01

    Topics closely related with organic, high molecular weight material synthesis are discussed. These are related to applications such as display, recording, sensors, semiconductors, and I.C. correlation. New materials are also discussed. General principles of individual application are not included. Materials discussed include color, electrochromic, thermal recording, organic photoconductors for electrophotography, and photochromic materials.

  9. Random-modulation differential absorption lidar based on semiconductor lasers and single photon counting for atmospheric CO2 sensing

    NASA Astrophysics Data System (ADS)

    Quatrevalet, M.; Ai, X.; Pérez-Serrano, A.; Adamiec, P.; Barbero, J.; Fix, A.; Rarity, J. G.; Ehret, G.; Esquivias, I.

    2017-09-01

    Carbon dioxide (CO2) is the major anthropogenic greenhouse gas contributing to global warming and climate change. Its concentration has recently reached the 400-ppm mark, representing a more than 40 % increase with respect to its level prior to the industrial revolution.

  10. Lower Merrimack Valley Workplace Education Project. Final Report.

    ERIC Educational Resources Information Center

    Norris, Cynthia Zylkuski; Breen, Patricia K.

    A description is provided of the Lower Merrimack Valley Workplace Education Project (WEP), an educational project that offers English-as-a-Second-Language (ESL) and job-specific education classes to hourly employees in the Semiconductor Division of Alpha Industries. The challenge of the project was to create a WEP that could accommodate the…

  11. Atmospheric perfluorocarbons.

    PubMed

    Aslam, M; Khalil, K; Rasmussen, Reinhold A; Culbertson, John A; Prins, John M; Grimsrud, Eric P; Shearer, Martha J

    2003-10-01

    Collectively, man-made emissions of a few greenhouse gases may cause about the same amount of global warming as increasing carbon dioxide. Among the most potent of these non-CO2 greenhouse gases are the perfluorocarbons that have extraordinarily long atmospheric lifetimes of 10,000 to more than 50,000 yr. We report atmospheric concentrations over two decades, between 1978 and 1997, of the three most abundant perfluorocarbons--CF4, C2F6, and C3F8--and delineate the sources that account for the present abundances and trends. We show that C2F6 and C3F8 are present at only 2.9 and 0.2 pptv, respectively. CF4 is the most abundant perfluorocarbon at 74 pptv (in 1997) of which about 40 pptv are from natural emissions, 33 pptv from aluminum manufacturing, and 1 pptv from the semiconductor industry. The increasing trend of CF4 has slowed in recent years due to the major reductions in the emission rate per ton of aluminum produced. The effect of the falling emission factor is partially offset by increased production and increasing use by the semiconductor industry.

  12. Au-decorated sodium titanate nanotubes as high-performance selective photocatalysts for pollutant degradation

    NASA Astrophysics Data System (ADS)

    El Rouby, Waleed M. A.; Comesaña-Hermo, Miguel; Testa-Anta, Martín; Carbó-Argibay, Enrique; Salgueiriño, Verónica; Pérez-Lorenzo, Moisés; Correa-Duarte, Miguel A.

    2017-04-01

    The bioaccumulation of polycyclic aromatic compounds originating from textile processing industries is nowadays a major environmental problem worldwide. In order to tackle this situation, several inorganic semiconductors have been tested as photocatalysts for the degradation of these harmful pollutants in the search of sustainable and cost-effective solutions. Nevertheless, these semiconductor materials often involve important limitations, such as poor efficiency and selectivity, which, in the end, substantially restrict their implementation at the industrial scale. As an alternative, we herein report the fabrication and application of Au-decorated titanate nanotubes (TNTs) as high-performance architectures for the selective degradation of organic contaminants. This synthetic strategy is intended to establish a synergetic integration of the physicochemical and photocatalytic features of these hybrid nanostructures, by combining the remarkable adsorption capabilities of TNTs with the enhanced light-harvesting efficiency provided by the incorporation of a noble metal component. The obtained results evidence the great potential that rationally designed plasmonic composites may have for the development of selective environmental remediation technologies and in particular on the current challenges faced by the wastewater treatment sector.

  13. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Reents, W.D. Jr.

    Particles present in the environment have significant affects in many areas from personal health due to atmospheric particles to various industrial processes that can be ruined due to particulate contamination such as semiconductor device manufacture and manufacture of sterile health products. The ability to detect deleterious contamination requires appropriate instrumentation to detect these particles. To prevent such contamination, the particle source must be identified by determining the composition of the offending particles. In a controlled environment, particle contamination often occurs in transients. In order to identify unknown particles, a technique must obtain compositional and size information regardless of particle identity,more » and perform this analysis in real-time so as to separate {open_quotes}background{close_quotes} particles from those produced in the transient event. Since processes are sensitive to certain particle size regimes and possibly, compositions, the instrumentation must be designed with these needs in mind. The authors have developed an instrument, the Ultra-Sensitive Particle Analysis System (USPAS) for situations where ultrafine particles, down to 0.002 micron, are of concern, such as the semiconductor manufacturing industry and the ambient environment.« less

  14. Throwing computing into reverse

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Frank, Michael P.

    For more than 50 years, computers have made steady and dramatic improvements, all thanks to Moore’s Law—the exponential increase over time in the number of transistors that can be fabricated on an integrated circuit of a given size. Moore’s Law owed its success to the fact that as transistors were made smaller, they became simultaneously cheaper, faster, and more energy efficient. The payoff from this win-win-win scenario enabled reinvestment in semiconductor fabrication technology that could make even smaller, more densely-packed transistors. And so this virtuous cycle continued, decade after decade. Now though, experts in industry, academia, and government laboratories anticipatemore » that semiconductor miniaturization won’t continue much longer—maybe 10 years or so, at best. Making transistors smaller no longer yields the improvements it used to. The physical characteristics of small transistors forced clock speeds to cease getting faster more than a decade ago, which drove the industry to start building chips with multiple cores. But even multi-core architectures must contend with increasing amounts of “dark silicon,” areas of the chip that must be powered off to avoid overheating.« less

  15. Hexamethyldisilazane Removal with Mesoporous Materials Prepared from Calcium Fluoride Sludge.

    PubMed

    Kao, Ching-Yang; Lin, Min-Fa; Nguyen, Nhat-Thien; Tsai, Hsiao-Hsin; Chang, Luh-Maan; Chen, Po-Han; Chang, Chang-Tang

    2018-05-01

    A large amount of calcium fluoride sludge is generated by the semiconductor industry every year. It also requires a high amount of fuel consumption using rotor concentrators and thermal oxidizers to treat VOCs. The mesoporous adsorbent prepared by calcium fluoride sludge was used for VOCs treatment. The semiconductor industry employs HMDS to promote the adhesion of photo-resistant material to oxide(s) due to the formation of silicon dioxide, which blocks porous adsorbents. The adsorption of HMDS (Hexamethyldisiloxane) was tested with mesoporous silica materials synthesized from calcium fluoride (CF-MCM). The resulting samples were characterized by XRD, XRF, FTIR, N2-adsorption-desorption techniques. The prepared samples possessed high specific surface area, large pore volume and large pore diameter. The crystal patterns of CF-MCM were similar with Mobil composite matter (MCM-41) from TEM image. The adsorption capacity of HMDS with CF-MCM was 40 and 80 mg g-1, respectively, under 100 and 500 ppm HMDS. The effects of operation parameters, such as contact time and mixture concentration, on the performance of CF-MCM were also discussed in this study.

  16. The ATHENA optics development

    NASA Astrophysics Data System (ADS)

    Bavdaz, Marcos; Wille, Eric; Shortt, Brian; Fransen, Sebastiaan; Collon, Maximilien; Barriere, Nicolas; Yanson, Alexei; Vacanti, Giuseppe; Haneveld, Jeroen; van Baren, Coen; Zuknik, Karl-Heinz; Christensen, Finn; Della Monica Ferreira, Desiree; Krumrey, Michael; Burwitz, Vadim; Pareschi, Giovanni; Spiga, Daniele; Valsecchi, Giuseppe; Vernani, Dervis

    2016-07-01

    ATHENA (Advanced Telescope for High ENergy Astrophysics) is being studied by the European Space Agency (ESA) as the second large science mission, with a launch slot in 2028. System studies and technology preparation activities are on-going. The optics of the telescope is based on the modular Silicon Pore Optics (SPO), a novel X-ray optics technology significantly benefiting from spin-in from the semiconductor industry. Several technology development activities are being implemented by ESA in collaboration with European industry and institutions. The related programmatic background, technology development approach and the associated implementation planning are presented.

  17. Applying Physics: Opportunities in Semiconductor Technology Companies

    NASA Astrophysics Data System (ADS)

    Redinbo, Greg

    2011-03-01

    While many physicists practice in university settings, physics skills can also be applied outside the traditional academic track. ~Identifying these opportunities requires a clear understanding of how your physics training can be used in an industrial setting, understanding what challenges technology companies face, and identifying how your problem solving skills can be broadly applied in technology companies. ~In this talk I will highlight the common features of such companies, discuss what specific skills are useful for an industrial physicist, and explain roles (possibly unfamiliar) that may be available to you.

  18. Panel Speaker 3

    NASA Astrophysics Data System (ADS)

    Doering, Robert

    2014-03-01

    Profitable products are frequently enabled by innovations that prevent early commoditization. At its best, industrial physics research provides the key differentiators for such products. To fulfill this goal, it's necessary to establish effective working relationships between R&D staff with both physics and engineering backgrounds. In the semiconductor industry, the ``middle ground'' is often materials science, electromagnetics, or a wide range of phenomena useful for creating sensors. In this brief presentation, we will mention a few examples of such collaborative development at Texas Instruments, including MEMS devices, ferroelectric memory, and silicon-IC-based radar.

  19. Semiconductor solar cells: Recent progress in terrestrial applications

    NASA Astrophysics Data System (ADS)

    Avrutin, V.; Izyumskaya, N.; Morkoç, H.

    2011-04-01

    In the last decade, the photovoltaic industry grew at a rate exceeding 30% per year. Currently, solar-cell modules based on single-crystal and large-grain polycrystalline silicon wafers comprise more than 80% of the market. Bulk Si photovoltaics, which benefit from the highly advanced growth and fabrication processes developed for microelectronics industry, is a mature technology. The light-to-electric power conversion efficiency of the best modules offered on the market is over 20%. While there is still room for improvement, the device performance is approaching the thermodynamic limit of ˜28% for single-junction Si solar cells. The major challenge that the bulk Si solar cells face is, however, the cost reduction. The potential for price reduction of electrical power generated by wafer-based Si modules is limited by the cost of bulk Si wafers, making the electrical power cost substantially higher than that generated by combustion of fossil fuels. One major strategy to bring down the cost of electricity generated by photovoltaic modules is thin-film solar cells, whose production does not require expensive semiconductor substrates and very high temperatures and thus allows decreasing the cost per unit area while retaining a reasonable efficiency. Thin-film solar cells based on amorphous, microcrystalline, and polycrystalline Si as well as cadmium telluride and copper indium diselenide compound semiconductors have already proved their commercial viability and their market share is increasing rapidly. Another avenue to reduce the cost of photovoltaic electricity is to increase the cell efficiency beyond the Shockley-Queisser limit. A variety of concepts proposed along this avenue forms the basis of the so-called third generation photovoltaics technologies. Among these approaches, high-efficiency multi-junction solar cells based on III-V compound semiconductors, which initially found uses in space applications, are now being developed for terrestrial applications. In this article, we discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells.

  20. Cancer Mortality and Incidence in Korean Semiconductor Workers

    PubMed Central

    Lee, Hye-Eun; Park, Jungsun; Kang, Seong-Kyu

    2011-01-01

    Objectives The purpose of this study was to evaluate cancer risks in the Korean semiconductor industry. Methods A retrospective cohort study was performed in eight semiconductor factories between 1998 and 2008. The number of subjects was 113,443 for mortality and 108,443 for incidence. Standardized mortality ratios (SMR) and standardized incidence ratios (SIR) were calculated. Results The SMR of leukemia was 0.39 (95% Confidence Interval 0.08-1.14) in males (2 cases) and 1.37 (0.55-2.81) in females (7 cases). The SMR of non-Hodgkin's lymphoma (NHL) was 1.33 (0.43-3.09, 5 cases) in males and 2.5 (0.68-6.40, 4 cases) in females. The SIR of leukemia was 0.69 (0.30-1.37, 8 cases) in males and 1.28 (0.61-2.36, 10 cases) in females. The SIR of NHL in females was 2.31 (1.23-3.95, 13 cases) and that of thyroid cancer in males was 2.11 (1.49-2.89, 38 cases). The excess incidence of NHL was significant in female assembly operators [SIR=3.15 (1.02-7.36, 5 cases)], but not significant in fabrication workers. The SIR of NHL in the group working for 1-5 years was higher than the SIR of NHL for those working for more than five years. The excess incidence of male thyroid cancer was observed in both office and manufacturing workers. Conclusion There was no significant increase of leukemia in the Korean semiconductor industry. However, the incidence of NHL in females and thyroid cancer in males were significantly increased even though there was no definite association between work and those diseases in subgroup analysis according to work duration. This result should be interpreted cautiously, because the majority of the cohort was young and the number of cases was small. PMID:22953196

  1. Cancer mortality and incidence in korean semiconductor workers.

    PubMed

    Lee, Hye-Eun; Kim, Eun-A; Park, Jungsun; Kang, Seong-Kyu

    2011-06-01

    The purpose of this study was to evaluate cancer risks in the Korean semiconductor industry. A retrospective cohort study was performed in eight semiconductor factories between 1998 and 2008. The number of subjects was 113,443 for mortality and 108,443 for incidence. Standardized mortality ratios (SMR) and standardized incidence ratios (SIR) were calculated. The SMR of leukemia was 0.39 (95% Confidence Interval 0.08-1.14) in males (2 cases) and 1.37 (0.55-2.81) in females (7 cases). The SMR of non-Hodgkin's lymphoma (NHL) was 1.33 (0.43-3.09, 5 cases) in males and 2.5 (0.68-6.40, 4 cases) in females. The SIR of leukemia was 0.69 (0.30-1.37, 8 cases) in males and 1.28 (0.61-2.36, 10 cases) in females. The SIR of NHL in females was 2.31 (1.23-3.95, 13 cases) and that of thyroid cancer in males was 2.11 (1.49-2.89, 38 cases). The excess incidence of NHL was significant in female assembly operators [SIR=3.15 (1.02-7.36, 5 cases)], but not significant in fabrication workers. The SIR of NHL in the group working for 1-5 years was higher than the SIR of NHL for those working for more than five years. The excess incidence of male thyroid cancer was observed in both office and manufacturing workers. There was no significant increase of leukemia in the Korean semiconductor industry. However, the incidence of NHL in females and thyroid cancer in males were significantly increased even though there was no definite association between work and those diseases in subgroup analysis according to work duration. This result should be interpreted cautiously, because the majority of the cohort was young and the number of cases was small.

  2. Impact of Scaled Technology on Radiation Testing and Hardening

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Cohn, Lewis M.

    2005-01-01

    This presentation gives a brief overview of some of the radiation challenges facing emerging scaled digital technologies with implications on using consumer grade electronics and next generation hardening schemes. Commercial semiconductor manufacturers are recognizing some of these issues as issues for terrestrial performance. Looking at means of dealing with soft errors. The thinned oxide has indicated improved TID tolerance of commercial products hardened by "serendipity" which does not guarantee hardness or say if the trend will continue. This presentation also focuses one reliability implications of thinned oxides.

  3. Insulated InP (100) semiconductor by nano nucleus generation in pure water

    NASA Astrophysics Data System (ADS)

    Ghorab, Farzaneh; Es'haghi, Zarrin

    2018-01-01

    Preparation of specified designs on optoelectronic devices such as Light-Emitting Diodes (LEDs) and Laser Diodes (LDs) by using insulated thin films is very important. InP as one of those semiconductors which is used as optoelectronic devices, have two different kinds of charge carriers as n-InP and p-InP in the microelectronic industry. The surface preparation of this kind of semiconductor can be accomplished with individually chemical, mechanical, chemo - mechanical and electrochemical methods. But electrochemical method can be suitably replaced instead of the other methods, like CMP (Chemical Mechanical Polishing), because of the simplicity. In this way, electrochemically formation of insulated thin films by nano nucleus generation on semiconductor (using constant current density of 0.07 mA /cm2) studied in this research. Insulated nano nucleus generation and their growth up to thin film formation on semiconductor single crystal (100), n-InP, inpure water (0.08 µs/cm,25°c) characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), Four-point probe and Styloprofilometer techniques. The SEM images show active and passive regions on the n-InP surface and not uniform area on p-InP surface by passing through the passive condition. So the passive regions were nonuniform, and only the active regions were uniform and clean. The various semiconducting behavior in electrochemical condition, studied and compared with structural specification of InP type group (III-V).

  4. MEDEA+ project 2T302 MUSCLE: masks through user's supply chain: leadership by excellence

    NASA Astrophysics Data System (ADS)

    Torsy, Andreas

    2008-04-01

    The rapid evolution of our information society depends on the continuous developments and innovations of semiconductor products. The cost per chip functionality keeps reducing by a factor of 2 every 18 month. However, this performance and success of the semiconductor industry critically depends on the quality of the lithographic photomasks. The need for the high quality of photomask drives lithography costs sensitively, which is a key factor in the manufacture of microelectronics devices. Therefore, the aim is to reduce production costs while overcoming challenges in terms of feature sizes, complexity and cycle times. Consequently, lithography processes must provide highest possible quality at reasonable prices. This way, the leadership in the lithographic area can be maintained and European chipmakers can stay competitive with manufacturers in the Far East and the USA. Under the umbrella of MEDEA+, a project called MUSCLE (<< Masks through User's Supply Chain: Leadership by Excellence >>) has been started among leading semiconductor companies in Europe: ALTIS Semiconductor (Project Leader), ALCATEL Vacuum, ATMEL, CEA/LETI, Entegris, NXP Semiconductors, TOPPAN Photomasks, AMTC, Carl ZEISS SMS, DMS, Infineon Technologies, VISTEC Semiconductor, NIKON Precision, SCHOTT Lithotec, ASML, PHOTRONICS, IMEC, DCE, DNP Photomask, STMicroelectronics, XYALIS and iCADA. MUSCLE focuses particularly on mask data flow, photomask carrier, photomask defect characterization and photomask data handling. In this paper, we will discuss potential solutions like standardization and automation of the photomask data flow based on SEMI P10, the performance and the impact of the supply chain parameter within the photomask process, the standardization of photomask defect characterization and a discussion of the impact of new Reticle Enhancement Technologies (RET) such as mask process correction and finally a generic model to describe the photomasks key performance indicators for prototype photomasks.

  5. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Swain, Basudev, E-mail: Swain@iae.re.kr; Mishra, Chinmayee; Lee, Chan Gi

    2015-07-15

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leachmore » residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.« less

  6. Bright triplet excitons in caesium lead halide perovskites

    NASA Astrophysics Data System (ADS)

    Becker, Michael A.; Vaxenburg, Roman; Nedelcu, Georgian; Sercel, Peter C.; Shabaev, Andrew; Mehl, Michael J.; Michopoulos, John G.; Lambrakos, Samuel G.; Bernstein, Noam; Lyons, John L.; Stöferle, Thilo; Mahrt, Rainer F.; Kovalenko, Maksym V.; Norris, David J.; Rainò, Gabriele; Efros, Alexander L.

    2018-01-01

    Nanostructured semiconductors emit light from electronic states known as excitons. For organic materials, Hund’s rules state that the lowest-energy exciton is a poorly emitting triplet state. For inorganic semiconductors, similar rules predict an analogue of this triplet state known as the ‘dark exciton’. Because dark excitons release photons slowly, hindering emission from inorganic nanostructures, materials that disobey these rules have been sought. However, despite considerable experimental and theoretical efforts, no inorganic semiconductors have been identified in which the lowest exciton is bright. Here we show that the lowest exciton in caesium lead halide perovskites (CsPbX3, with X = Cl, Br or I) involves a highly emissive triplet state. We first use an effective-mass model and group theory to demonstrate the possibility of such a state existing, which can occur when the strong spin-orbit coupling in the conduction band of a perovskite is combined with the Rashba effect. We then apply our model to CsPbX3 nanocrystals, and measure size- and composition-dependent fluorescence at the single-nanocrystal level. The bright triplet character of the lowest exciton explains the anomalous photon-emission rates of these materials, which emit about 20 and 1,000 times faster than any other semiconductor nanocrystal at room and cryogenic temperatures, respectively. The existence of this bright triplet exciton is further confirmed by analysis of the fine structure in low-temperature fluorescence spectra. For semiconductor nanocrystals, which are already used in lighting, lasers and displays, these excitons could lead to materials with brighter emission. More generally, our results provide criteria for identifying other semiconductors that exhibit bright excitons, with potential implications for optoelectronic devices.

  7. Natural gas in the energy industry of the 21st century

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cuttica, J.

    1995-12-31

    This paper provides a gas industry perspective on the impacts of restructuring the natural gas and electric industries. The four main implications discussed are: (1) market trends, (2) strategic positioning, (3) significant market implications, and (4) issues for the future. Market trends discussed include transitioning rate of return to market competition and regulatory impacts. Significant market implications for gas-fired generation identified include limited new generation investment, extension of existing plants, and an opportunity for distributed power generation. 12 tabs.

  8. Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Simon, F.-G., E-mail: franz-georg.simon@bam.de; Holm, O.; Berger, W.

    2013-04-15

    Highlights: ► The semiconductor layer on thin-film photovoltaic modules can be removed from the glass-plate by vacuum blast cleaning. ► The separation of blasting agent and semiconductor can be performed using flotation with a valuable yield of 55%. ► PV modules are a promising source for the recovery of tellurium in the future. - Abstract: Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stockmore » and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources.« less

  9. Effect of occupational safety measures on micronucleus frequency in semiconductor workers.

    PubMed

    Winker, Robert; Roos, Gerhard; Pilger, Alexander; Rüdiger, Hugo W

    2008-02-01

    To examine whether semiconductor workers exposed to complex mixtures of chemical waste show an increase in genotoxic effects, and, if so, whether occupational safety measures protect these workers. To assess chemical exposure in the workplace, air monitoring of boron trifluoride and boron trichloride was performed and urinary concentrations of fluoride were measured. The cytokinesis-block micronucleus test on isolated lymphocytes was used for the detection of genotoxic effects. Two series of monitoring have been performed in order to assess the effect of implemented protection measures. We found a significantly higher mean frequency of micronuclei in exposed workers than in controls, whereas air monitoring and measurement of urinary fluoride failed to detect chemical exposure of these workers. Twelve years after implementation of protective measures, the mean level of micronuclei in exposed individuals was found to be as low as those from controls. These findings indicate that exposed workers in the semiconductor industry may have an increased risk of genotoxic effects from complex mixtures of chemical waste products. The decline of the mean level of micronuclei in exposed workers down to the base level of controls after implementation of protective measures points to the significance of adequate safety standards to protect against chromosomal damage in semiconductor personnel.

  10. Recent development of radiation measurement instrument for industrial and medical applications

    NASA Astrophysics Data System (ADS)

    Baba, Sueki; Ohmori, Koichi; Mito, Yoshio; Tanoue, Toshiya; Yano, Shigeki; Tokumori, Kenji; Toyofuku, Fukai; Kanda, Shigenobu

    2001-02-01

    Recently, computer imaging technology has developed very high-quality image and fast processing time. X-rays have been used for many purposes such as medical diagnosis and analyzing the structure of industrial materials. However, as X-rays are hazardous to the human body, it is desirable to reduce its exposed dose to a minimum. For this purpose, it is necessary to use a semiconductor radiation detector with a high efficiency for X-rays. We have developed photon-counting CdTe array detector system for medical and industrial use. The bone densitometer for Dual Energy X-ray Absorptometry (DEXA) has been developed to make diagnosis of osteoporosis, and it is developed to analyze a material element for industrial use. Recently, we have developed a monochromatic X-ray CT using a 256 ch CdTe array detector. We found that the array detector systems are very useful for medical and industrial applications.

  11. The National Si-Soft Project

    NASA Astrophysics Data System (ADS)

    Chang, Chun-Yen; Trappey, Charles V.

    2003-06-01

    Taiwan's electronics industry emerged in the 1960s with the creation of a small but well planned integrated circuit (IC) packaging industry. This industry investment led to bolder investments in research, laboratories, and the island's first semiconductor foundries in the 1980s. Following the success of the emerging IC manufacturers and design houses, hundreds of service firms and related industries (software, legal services, substrate, chemical, and test firms among others) opened for business and completed Taiwan's IC manufacturing supply chain. The challenge for Taiwan's electronics industry is to take the lead in the design, manufacture, and marketing of name brand electronic products. This paper introduces the Si-Soft (silicon software) Project, a national initiative that builds on Taiwan's achievements in manufacturing (referred to as Si-Hard or silicon hardware) to launch a new wave of companies. These firms will contribute to the core underlying technology (intellectual property) used in the creation of electronic products.

  12. Integrated Imaging and Vision Techniques for Industrial Inspection: A Special Issue on Machine Vision and Applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Zheng; Ukida, H.; Ramuhalli, Pradeep

    2010-06-05

    Imaging- and vision-based techniques play an important role in industrial inspection. The sophistication of the techniques assures high- quality performance of the manufacturing process through precise positioning, online monitoring, and real-time classification. Advanced systems incorporating multiple imaging and/or vision modalities provide robust solutions to complex situations and problems in industrial applications. A diverse range of industries, including aerospace, automotive, electronics, pharmaceutical, biomedical, semiconductor, and food/beverage, etc., have benefited from recent advances in multi-modal imaging, data fusion, and computer vision technologies. Many of the open problems in this context are in the general area of image analysis methodologies (preferably in anmore » automated fashion). This editorial article introduces a special issue of this journal highlighting recent advances and demonstrating the successful applications of integrated imaging and vision technologies in industrial inspection.« less

  13. Space industrialization. Volume 3: World and domestic implications

    NASA Technical Reports Server (NTRS)

    1978-01-01

    The status of worldwide space industralization activities is assessed as well as the benefits to be anticipated from enhanced activities. Methods for stimulating space industralization growth are discussed with emphasis on foreign and international activities, national and world impact assessments, industry/government interfaces, legal implications, institutional implications, economics and capitalization, and implementation issues and recommendations.

  14. Advanced excimer laser technologies enable green semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  15. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    NASA Astrophysics Data System (ADS)

    Hussain, Muhammad M.; Rojas, Jhonathan P.; Torres Sevilla, Galo A.

    2013-05-01

    Today's information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor - heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon - industry's darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%).

  16. Economics of polysilicon processes

    NASA Technical Reports Server (NTRS)

    Yaws, C. L.; Li, K. Y.; Chou, S. M.

    1986-01-01

    Techniques are being developed to provide lower cost polysilicon material for solar cells. Existing technology which normally provides semiconductor industry polysilicon material is undergoing changes and also being used to provide polysilicon material for solar cells. Economics of new and existing technologies are presented for producing polysilicon. The economics are primarily based on the preliminary process design of a plant producing 1,000 metric tons/year of silicon. The polysilicon processes include: Siemen's process (hydrogen reduction of trichlorosilane); Union Carbide process (silane decomposition); and Hemlock Semiconductor process (hydrogen reduction of dichlorosilane). The economics include cost estimates of capital investment and product cost to produce polysilicon via the technology. Sensitivity analysis results are also presented to disclose the effect of major paramentes such as utilities, labor, raw materials and capital investment.

  17. Moore's law, lithography, and how optics drive the semiconductor industry

    NASA Astrophysics Data System (ADS)

    Hutcheson, G. Dan

    2018-03-01

    When the subject of Moore's Law arises, the important role that lithography plays and how advances in optics have made it all possible is seldom brought up in the world outside of lithography itself. When lithography is mentioned up in the value chain, it's often a critique of how advances are coming too slow and getting far too expensive. Yet advances in lithography are at the core of how Moore's Law is viable. This presentation lays out how technology and the economics of optics in manufacturing interleave to drive the immense value that semiconductors have brought to the world by making it smarter. Continuing these advances will be critical as electronics make the move from smart to cognitive.

  18. Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Mendis, Sunetra (Inventor); Kemeny, Sabrina E. (Inventor)

    2006-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

  19. It's Time to Redefine Moore's Law Again

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    DeBenedictis, Erik P.

    The familiar story of Moore's law is actually inaccurate. Here, this article corrects the story, leading to different projections for the future. Moore's law is a fluid idea whose definition changes over time. It thus doesn't have the ability to "end," as is popularly reported, but merely takes different forms as the semiconductor and computer industries evolve.

  20. Mineral resource of the month: germanium

    USGS Publications Warehouse

    Jorgenson, John D.

    2003-01-01

    Germanium is a hard, brittle semimetal that first came into use over a half-century ago as a semiconductor material in radar units and in the first transistor ever made. Most germanium is recovered as a byproduct of zinc smelting, but it has also been recovered at some copper smelters and from the fly ash of coal-burning industrial power plants.

  1. It's Time to Redefine Moore's Law Again

    DOE PAGES

    DeBenedictis, Erik P.

    2017-02-06

    The familiar story of Moore's law is actually inaccurate. Here, this article corrects the story, leading to different projections for the future. Moore's law is a fluid idea whose definition changes over time. It thus doesn't have the ability to "end," as is popularly reported, but merely takes different forms as the semiconductor and computer industries evolve.

  2. Spectroscopic characterization of III-V semiconductor nanomaterials

    NASA Astrophysics Data System (ADS)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored through a novel spectroscopic technique first formulated for the rather different purpose of dispersion engineering for slow-light schemes. The frequency-resolved technique combined with the unusual (110) quantum wells in a furthermore atypical waveguide experimental geometry has revealed fascinating behavior of electron spin splitting which points to the possibility of optically orienting electron spins with linearly polarized light---an experimental result supporting a theoretical description of the phenomenon itself only a few years old. Lastly, to explore a space of further-restricted dimensionality, the final chapters describe InP semiconductor nanowires with dimensions small enough to be considered truly one-dimensional. Like the bulk GaAs of the first few chapters, the InP nanowires here crystallize in a wurtzite structure. In the InP nanowire case, though, the experimental techniques explored for characterization are temperature-dependent time-integrated photoluminescence at the single-wire level (including samples with InAsP insertions) and time-resolved photoluminescence at the ensemble level. The carrier dynamics revealed through these time-resolved studies are the first of their kind for wurtzite InP nanowires. The chapters are thus ordered as a progression from three (bulk), to two (quantum well), to one (nanowire), to zero dimensions (axially-structured nanowire), with the uniting theme the emphasis on connecting the semiconductor nanomaterials' crystallinity to its exhibited properties by relevant experimental spectroscopic techniques, whether these are standard methods or effectively invented for the case at hand.

  3. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

    PubMed

    Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

    2007-05-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

  4. Implicit versus explicit momentum relaxation time solution for semiconductor nanowires

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Marin, E. G., E-mail: egmarin@ugr.es; Ruiz, F. G., E-mail: franruiz@ugr.es; Godoy, A., E-mail: agodoy@ugr.es

    2015-07-14

    We discuss the necessity of the exact implicit Momentum Relaxation Time (MRT) solution of the Boltzmann transport equation in order to achieve reliable carrier mobility results in semiconductor nanowires. Firstly, the implicit solution for a 1D electron gas with a isotropic bandstructure is presented resulting in the formulation of a simple matrix system. Using this solution as a reference, the explicit approach is demonstrated to be inaccurate for the calculation of inelastic anisotropic mechanisms such as polar optical phonons, characteristic of III-V materials. Its validity for elastic and isotropic mechanisms is also evaluated. Finally, the implications of the MRT explicitmore » approach inaccuracies on the total mobility of Si and III-V NWs are studied.« less

  5. Recent progress in tungsten oxides based memristors and their neuromorphological applications

    NASA Astrophysics Data System (ADS)

    Qu, Bo; Younis, Adnan; Chu, Dewei

    2016-09-01

    The advance in conventional silicon based semiconductor industry is now becoming indeterminacy as it still along the road of Moore's Law and concomitant problems associated with it are the emergence of a number of practical issues such as short channel effect. In terms of memory applications, it is generally believed that transistors based memory devices will approach to their scaling limits up to 2018. Therefore, one of the most prominent challenges today in semiconductor industry is the need of a new memory technology which is able to combine the best characterises of current devices. The resistive switching memories which are regarded as "memristors" thus gain great attentions thanks to their specific nonlinear electrical properties. More importantly, their behaviour resembles with the transmission characteristic of synapse in biology. Therefore, the research of synapses biomimetic devices based on memristor will certainly bring a great research prospect in studying synapse emulation as well as building artificial neural networks. Tungsten oxides (WO x ) exhibits many essential characteristics as a great candidate for memristive devices including: accredited endurance (over 105 cycles), stoichiometric flexibility, complimentary metal-oxide-semiconductor (CMOS) process compatibility and configurable properties including non-volatile rectification, memorization and learning functions. Herein, recent progress on Tungsten oxide based materials and its associating memory devices had been reviewed. The possible implementation of this material as a bio-inspired artificial synapse is also highlighted. The penultimate section summaries the current research progress for tungsten oxide based biological synapses and end up with several proposals that have been suggested for possible future developments.

  6. Investigation of Transmission Resonances with Specific Properties in Rectangular Semiconductor Quantum Wells

    ERIC Educational Resources Information Center

    Niketic, Nemanja; Milanovic, Vitomir; Radovanovic, Jelena

    2012-01-01

    In this paper we provide a detailed analysis of the energy position and type of transmission maxima in rectangular quantum wells (QWs), taking into consideration the difference of electron effective masses in the barrier and well layers. Particular attention is given to transmission maxima that are less than unity and the implications of effective…

  7. The Implications of Industrial Management for the Administration of Industrial Education Programs

    ERIC Educational Resources Information Center

    White, Michael R.

    1978-01-01

    The paper discusses the functions and principles of industrial management, compares educational and industrial organization, and notes industrial management techniques applicable to industrial education administration. (MF)

  8. WAMA: a method of optimizing reticle/die placement to increase litho cell productivity

    NASA Astrophysics Data System (ADS)

    Dor, Amos; Schwarz, Yoram

    2005-05-01

    This paper focuses on reticle/field placement methodology issues, the disadvantages of typical methods used in the industry, and the innovative way that the WAMA software solution achieves optimized placement. Typical wafer placement methodologies used in the semiconductor industry considers a very limited number of parameters, like placing the maximum amount of die on the wafer circle and manually modifying die placement to minimize edge yield degradation. This paper describes how WAMA software takes into account process characteristics, manufacturing constraints and business objectives to optimize placement for maximum stepper productivity and maximum good die (yield) on the wafer.

  9. Micropyrolyzer for chemical analysis of liquid and solid samples

    DOEpatents

    Mowry, Curtis D.; Morgan, Catherine H.; Manginell, Ronald P.; Frye-Mason, Gregory C.

    2006-07-18

    A micropyrolyzer has applications to pyrolysis, heated chemistry, and thermal desorption from liquid or solid samples. The micropyrolyzer can be fabricated from semiconductor materials and metals using standard integrated circuit technologies. The micropyrolyzer enables very small volume samples of less than 3 microliters and high sample heating rates of greater than 20.degree. C. per millisecond. A portable analyzer for the field analysis of liquid and solid samples can be realized when the micropyrolyzer is combined with a chemical preconcentrator, chemical separator, and chemical detector. Such a portable analyzer can be used in a variety of government and industrial applications, such as non-proliferation monitoring, chemical and biological warfare detection, industrial process control, water and air quality monitoring, and industrial hygiene.

  10. Nanopatterning of Group V Elements for Tailoring the Electronic Properties of Semiconductors by Monolayer Doping.

    PubMed

    Thissen, Peter; Cho, Kyeongjae; Longo, Roberto C

    2017-01-18

    Control of the electronic properties of semiconductors is primarily achieved through doping. While scaling down the device dimensions to the molecular regime presents an increasing number of difficulties, doping control at the nanoscale is still regarded as one of the major challenges of the electronic industry. Within this context, new techniques such as monolayer doping (MLD) represent a substantial improvement toward surface doping with atomic and specific doping dose control at the nanoscale. Our previous work has explained in detail the atomistic mechanism behind MLD by means of density-functional theory calculations (Chem. Mater. 2016, 28, 1975). Here, we address the key questions that will ultimately allow one to optimize the scalability of the MLD process. First, we show that dopant coverage control cannot be achieved by simultaneous reaction of several group V elements, but stepwise reactions make it possible. Second, using ab initio molecular dynamics, we investigate the thermal decomposition of the molecular precursors, together with the stability of the corresponding binary and ternary dopant oxides, prior to the dopant diffusion into the semiconductor surface. Finally, the effect of the coverage and type of dopant on the electronic properties of the semiconductor is also analyzed. Furthermore, the atomistic characterization of the MLD process raises unexpected questions regarding possible crystal damage effects by dopant exchange with the semiconductor ions or the final distribution of the doping impurities within the crystal structure. By combining all our results, optimization recipes to create ultrashallow doped junctions at the nanoscale are finally proposed.

  11. A study of the talent training project management for semiconductor industry in Taiwan: the application of a hybrid data envelopment analysis approach.

    PubMed

    Kao, Ling-Jing; Chiu, Shu-Yu; Ko, Hsien-Tang

    2014-01-01

    The purpose of this study is to evaluate the training institution performance and to improve the management of the Manpower Training Project (MTP) administered by the Semiconductor Institute in Taiwan. Much literature assesses the efficiency of an internal training program initiated by a firm, but only little literature studies the efficiency of an external training program led by government. In the study, a hybrid solution of ICA-DEA and ICA-MPI is developed for measuring the efficiency and the productivity growth of each training institution over the period. The technical efficiency change, the technological change, pure technical efficiency change, scale efficiency change, and the total factor productivity change were evaluated according to five inputs and two outputs. According to the results of the study, the training institutions can be classified by their efficiency successfully and the guidelines for the optimal level of input resources can be obtained for each inefficient training institution. The Semiconductor Institute in Taiwan can allocate budget more appropriately and establish withdrawal mechanisms for inefficient training institutions.

  12. Small molecule organic semiconductors on the move: promises for future solar energy technology.

    PubMed

    Mishra, Amaresh; Bäuerle, Peter

    2012-02-27

    This article is written from an organic chemist's point of view and provides an up-to-date review about organic solar cells based on small molecules or oligomers as absorbers and in detail deals with devices that incorporate planar-heterojunctions (PHJ) and bulk heterojunctions (BHJ) between a donor (p-type semiconductor) and an acceptor (n-type semiconductor) material. The article pays particular attention to the design and development of molecular materials and their performance in corresponding devices. In recent years, a substantial amount of both, academic and industrial research, has been directed towards organic solar cells, in an effort to develop new materials and to improve their tunability, processability, power conversion efficiency, and stability. On the eve of commercialization of organic solar cells, this review provides an overview over efficiencies attained with small molecules/oligomers in OSCs and reflects materials and device concepts developed over the last decade. Approaches to enhancing the efficiency of organic solar cells are analyzed. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. A Study of the Talent Training Project Management for Semiconductor Industry in Taiwan: The Application of a Hybrid Data Envelopment Analysis Approach

    PubMed Central

    Kao, Ling-Jing; Chiu, Shu-Yu; Ko, Hsien-Tang

    2014-01-01

    The purpose of this study is to evaluate the training institution performance and to improve the management of the Manpower Training Project (MTP) administered by the Semiconductor Institute in Taiwan. Much literature assesses the efficiency of an internal training program initiated by a firm, but only little literature studies the efficiency of an external training program led by government. In the study, a hybrid solution of ICA-DEA and ICA-MPI is developed for measuring the efficiency and the productivity growth of each training institution over the period. The technical efficiency change, the technological change, pure technical efficiency change, scale efficiency change, and the total factor productivity change were evaluated according to five inputs and two outputs. According to the results of the study, the training institutions can be classified by their efficiency successfully and the guidelines for the optimal level of input resources can be obtained for each inefficient training institution. The Semiconductor Institute in Taiwan can allocate budget more appropriately and establish withdrawal mechanisms for inefficient training institutions. PMID:24977192

  14. Supplier Relationship Management: Models, Considerations and Implications for DOD

    DTIC Science & Technology

    2003-01-01

    AY 2002-2003 SUPPLIER RELATIONSHIP MANAGEMENT : MODELS, CONSIDERATIONS AND IMPLICATIONS FOR DOD STRATEGIC SUPPLY INDUSTRY STUDY COURSE COLONEL TOM...REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Supplier Relationship Management : Models, Considerations and Implications for DOD...nature of the market or industry drive differences in supplier relationships ? This paper begins by defining supplier relationship management (SRM) and why

  15. H2 evolution at Si-based metal-insulator-semiconductor photoelectrodes enhanced by inversion channel charge collection and H spillover.

    PubMed

    Esposito, Daniel V; Levin, Igor; Moffat, Thomas P; Talin, A Alec

    2013-06-01

    Photoelectrochemical (PEC) water splitting represents a promising route for renewable production of hydrogen, but trade-offs between photoelectrode stability and efficiency have greatly limited the performance of PEC devices. In this work, we employ a metal-insulator-semiconductor (MIS) photoelectrode architecture that allows for stable and efficient water splitting using narrow bandgap semiconductors. Substantial improvement in the performance of Si-based MIS photocathodes is demonstrated through a combination of a high-quality thermal SiO2 layer and the use of bilayer metal catalysts. Scanning probe techniques were used to simultaneously map the photovoltaic and catalytic properties of the MIS surface and reveal the spillover-assisted evolution of hydrogen off the SiO2 surface and lateral photovoltage driven minority carrier transport over distances that can exceed 2 cm. The latter finding is explained by the photo- and electrolyte-induced formation of an inversion channel immediately beneath the SiO2/Si interface. These findings have important implications for further development of MIS photoelectrodes and offer the possibility of highly efficient PEC water splitting.

  16. Tunneling conductance in semiconductor-superconductor hybrid structures

    NASA Astrophysics Data System (ADS)

    Stenger, John; Stanescu, Tudor D.

    2017-12-01

    We study the differential conductance for charge tunneling into a semiconductor wire-superconductor hybrid structure, which is actively investigated as a possible scheme for realizing topological superconductivity and Majorana zero modes. The calculations are done based on a tight-binding model of the heterostructure using both a Blonder-Tinkham-Klapwijk approach and a Keldysh nonequilibrium Green's function method. The dependence of various tunneling conductance features on the coupling strength between the semiconductor and the superconductor, the tunnel barrier height, and temperature is systematically investigated. We find that treating the parent superconductor as an active component of the system, rather than a passive source of Cooper pairs, has qualitative consequences regarding the low-energy behavior of the differential conductance. In particular, the presence of subgap states in the parent superconductor, due to disorder and finite magnetic fields, leads to characteristic particle-hole asymmetric features and to the breakdown of the quantization of the zero-bias peak associated with the presence of Majorana zero modes localized at the ends of the wire. The implications of these findings for the effort toward the realization of Majorana bound states with true non-Abelian properties are discussed.

  17. 2001 Industry Studies: Electronics

    DTIC Science & Technology

    2001-01-01

    Center, Dallas, TX Northrop Grumman Corp, Electronic Sensors & Systems, Baltimore, MD International Acer Incorporated, Hsin Chu, Taiwan Aerospace...manufacturing. Many of the large-scale fabrication foundries are offshore in such countries as Taiwan, Singapore and Malaysia .5 - 5 - The largest market for...done in the US. However, more of the actual mass manufacturing of the chips are done in Taiwan, Singapore, and Malaysia . A new semiconductor facility

  18. High density circuit technology, part 4

    NASA Technical Reports Server (NTRS)

    Wade, T. E.

    1982-01-01

    An accurate study and evaluation of dielectric thin films is conducted in order to find the material or combination of materials which would optimize NASA'S double layer metal process. Emphasis is placed on polyimide dielectrics because of their reported outstanding dielectric characteristics (including electrical, chemical, thermal, and mechanical) and ease of processing, as well as their rapid acceptance by the semiconductor industry.

  19. America COMPETES Act: Programs, Funding, and Selected Issues

    DTIC Science & Technology

    2008-10-17

    semiconductor industry, was created.7 Additional congressional actions also focused on increasing corporate spending on research and development in...Federal Policy, and Legislative Action , by Jeffrey J. Kuenzi. 44 Bureau of Economic Analysis/National Science Foundation, “2007 Research and Development...government consider a civilian technology corporation or a civilian technology agency, in limited areas, including energy research .80 A similar action

  20. SEMATECH, A Case Study: Analysis of a Government-Industry Partnership

    DTIC Science & Technology

    1993-09-23

    profit potential in the private market. Often, public sector technologies do not. Commercial technologies must be technically and economically...and Private Spending .................. 80 ix I. INTRODUCTION AND BACKGROUND Critics proclaim the Semiconductor Manufacturing Technology Initiative...in the R&D market and in the product market." (Katz and Ordover, 1990, p. 150) Technological spillovers result primarily from private R&D investment

  1. Consequent use of IT tools as a driver for cost reduction and quality improvements

    NASA Astrophysics Data System (ADS)

    Hein, Stefan; Rapp, Roberto; Feustel, Andreas

    2013-10-01

    The semiconductor industry drives a lot of efforts in the field of cost reductions and quality improvements. The consequent use of IT tools is one possibility to support these goals. With the extensions of its 150mm Fab to 200mm Robert Bosch increased the systematic use of data analysis and Advanced Process Control (APC).

  2. Failure Mode/Mechanism Distributions

    DTIC Science & Technology

    1991-09-01

    circuits , hybrids, discrete semiconductors, microwave devices, optoelectronics and nonelectronic parts employed in military, space, industrial and...FMEA may be performed as a hardware analysis, a functional analysis, or a combination analysis and is ideally initiated at the part, circuit or...by a single replaceable module , a separate FMEA could be performed on the internal functions of the module , viewing the module as a system. The level

  3. Planning & Priority Setting for Basic Research

    DTIC Science & Technology

    2010-05-05

    Integrated into numerous commercial codes in aerospace, automotive , semiconductor, and chemical industries Fast Multipole Methods (ONR 31) Applications... Use knowledge (even failures) to reduce risk in acquisition Provide the basis for future Navy and arine Corps syste s Ensure research...relevancy to Naval S&T strategy Transition pro ising Basic Research to applications Use kno ledge (even failures) to reduce risk in acquisition Maintain

  4. Electronics Industry

    DTIC Science & Technology

    2007-01-01

    countries in developing market nations in Asia (such as Korea, Taiwan, Singapore, Malaysia , China and Vietnam). The competition for the knowledge, economic...Intel, Infineon Technologies, STMicroelectronics, Samsung Electronics, Texas Instruments, AMD Spansion, Philips Semiconductor, Freescale... Samsung ($19.7B), #5 Toshiba ($9.8B), #6 TSMC ($9.7B), #7 Hynix ($8.0B) and #8 Renesas ($7.9B) (McGrath, 2007, p. 3). Samsung , headquartered in

  5. Organic Semiconductors based on Dyes and Color Pigments.

    PubMed

    Gsänger, Marcel; Bialas, David; Huang, Lizhen; Stolte, Matthias; Würthner, Frank

    2016-05-01

    Organic dyes and pigments constitute a large class of industrial products. The utilization of these compounds in the field of organic electronics is reviewed with particular emphasis on organic field-effect transistors. It is shown that for most major classes of industrial dyes and pigments, i.e., phthalocyanines, perylene and naphthalene diimides, diketopyrrolopyrroles, indigos and isoindigos, squaraines, and merocyanines, charge-carrier mobilities exceeding 1 cm(2) V(-1) s(-1) have been achieved. The most widely investigated molecules due to their n-channel operation are perylene and naphthalene diimides, for which even values close to 10 cm(2) V(-1) s(-1) have been demonstrated. The fact that all of these π-conjugated colorants contain polar substituents leading to strongly quadrupolar or even dipolar molecules suggests that indeed a much larger structural space shows promise for the design of organic semiconductor molecules than was considered in this field traditionally. In particular, because many of these dye and pigment chromophores demonstrate excellent thermal and (photo-)chemical stability in their original applications in dyeing and printing, and are accessible by straightforward synthetic protocols, they bear a particularly high potential for commercial applications in the area of organic electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Cascade laser applications: trends and challenges

    NASA Astrophysics Data System (ADS)

    d'Humières, B.; Margoto, Éric; Fazilleau, Yves

    2016-03-01

    When analyses need rapid measurements, cost effective monitoring and miniaturization, tunable semiconductor lasers can be very good sources. Indeed, applications like on-field environmental gas analysis or in-line industrial process control are becoming available thanks to the advantage of tunable semiconductor lasers. Advances in cascade lasers (CL) are revolutionizing Mid-IR spectroscopy with two alternatives: interband cascade lasers (ICL) in the 3-6μm spectrum and quantum cascade lasers (QCL), with more power from 3 to 300μm. The market is getting mature with strong players for driving applications like industry, environment, life science or transports. CL are not the only Mid-IR laser source. In fact, a strong competition is now taking place with other technologies like: OPO, VCSEL, Solid State lasers, Gas, SC Infrared or fiber lasers. In other words, CL have to conquer a share of the Mid-IR application market. Our study is a market analysis of CL technologies and their applications. It shows that improvements of components performance, along with the progress of infrared laser spectroscopy will drive the CL market growth. We compare CL technologies with other Mid-IR sources and estimate their share in each application market.

  7. Review of mixer design for low voltage - low power applications

    NASA Astrophysics Data System (ADS)

    Nurulain, D.; Musa, F. A. S.; Isa, M. Mohamad; Ahmad, N.; Kasjoo, S. R.

    2017-09-01

    A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS.

  8. Reliability of copper wire bonds on a novel over-pad metallization

    NASA Astrophysics Data System (ADS)

    Kawashiro, Fumiyoshi; Itoh, Satoshi; Maeda, Takehiko; Hirose, Tetsuya; Yajima, Akira; Etoh, Takaki; Nishikawa, Hiroshi

    2015-05-01

    Wire bonding technology is used in most semiconductor products. Recently, high gold prices have forced semiconductor manufacturers to replace Au wires with Cu wires. Because Cu wire bonds are vulnerable to high temperature and humidity, they remain unpopular in automotive and industrial applications with narrow-bond-pad pitches and small deformed ball diameters. To avoid forming the corrosive Cu-rich intermetallic compound Cu9Al4, the use of a Ni/Pd(/Au) over-pad metallization (OPM) structure produced by electroless plating on the Al metallization has been proposed. However, certain technical issues must be overcome, such as variations in the purity and thickness of the plating. To tackle these issues, a novel OPM structure produced by physical vapor deposition is proposed and evaluated in this study.

  9. Editorial Conference Comments by the General Chair

    NASA Astrophysics Data System (ADS)

    Reed, Robert A.

    2017-01-01

    The 53rd IEEE Nuclear and Space Radiation Effects Conference (NSREC) was held July 11-15, 2016, at the Oregon Convention Center in Portland; the conference hotel was the Portland Doubletree. The NSREC is recognized as one of the premier international conferences on radiation effects in electronic materials, devices, and systems. The 2016 conference continued this tradition with a strong technical program, a one-day tutorial short course, radiation effects data workshop, industrial exhibit, and meetings for the IEEE Women in Engineering and Young Professionals organizations. The conference was sponsored by the Radiation Effects Committee of the IEEE Nuclear and Plasma Sciences Society (NPSS), and supported by Atmel, BAE Systems, Boeing, Cobham Semiconductor Solutions, Freebird Semiconductor, Honeywell, International Rectifier, Intersil Corporation, Jet Propulsion Laboratory, Northrop Grumman, Southwest Research Institute, and VPT Rad.

  10. Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors

    NASA Astrophysics Data System (ADS)

    Hu, Gangyi; Wijesinghe, Udumbara; Naquin, Clint; Maggio, Ken; Edwards, H. L.; Lee, Mark

    2017-10-01

    Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.

  11. Patterning and templating for nanoelectronics.

    PubMed

    Galatsis, Kosmas; Wang, Kang L; Ozkan, Mihri; Ozkan, Cengiz S; Huang, Yu; Chang, Jane P; Monbouquette, Harold G; Chen, Yong; Nealey, Paul; Botros, Youssry

    2010-02-09

    The semiconductor industry will soon be launching 32 nm complementary metal oxide semiconductor (CMOS) technology node using 193 nm lithography patterning technology to fabricate microprocessors with more than 2 billion transistors. To ensure the survival of Moore's law, alternative patterning techniques that offer advantages beyond conventional top-down patterning are aggressively being explored. It is evident that most alternative patterning techniques may not offer compelling advantages to succeed conventional top-down lithography for silicon integrated circuits, but alternative approaches may well indeed offer functional advantages in realising next-generation information processing nanoarchitectures such as those based on cellular, bioinsipired, magnetic dot logic, and crossbar schemes. This paper highlights and evaluates some patterning methods from the Center on Functional Engineered Nano Architectonics in Los Angeles and discusses key benchmarking criteria with respect to CMOS scaling.

  12. Clothing Preferences of Older Women: Implications for Gerontology and the American Clothing Industry.

    ERIC Educational Resources Information Center

    Spruiell, Phyllis R.; Jernigan, Marian

    1982-01-01

    Investigated the clothing preferences and problems of older women, using personal interviews. Presents results of preferred styles in detail. Discusses implications of the research for gerontologists in higher education and for the American clothing industry. (RC)

  13. Plasmonic engineering of spontaneous emission from silicon nanocrystals.

    PubMed

    Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

    2013-01-01

    Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells.

  14. Metasurface Mirrors for External Control of Mie Resonances.

    PubMed

    van de Groep, Jorik; Brongersma, Mark L

    2018-06-13

    The ability to control and structurally tune the optical resonances of semiconductor nanostructures has far-reaching implications for a wide range of optical applications, including photodetectors, (bio)sensors, and photovoltaics. Such control is commonly obtained by tailoring the nanostructure's geometry, material, or dielectric environment. Here, we combine insights from the field of coherent optics and metasurface mirrors to effectively turn Mie resonances on and off with high spatial control and in a polarization-dependent fashion. We illustrate this in an integrated device by manipulating the photocurrent spectra of a single-nanowire photodetector placed on a metasurface mirror. This approach can be generalized to control spectral, angle-dependent, absorption, and scattering properties of semiconductor nanostructures with an engineered metasurface and without a need to alter their geometric or materials properties.

  15. Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method

    NASA Astrophysics Data System (ADS)

    Chidambaram, Thenappan

    III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

  16. Report on the fifth workshop on synchrotron x ray lithography

    NASA Astrophysics Data System (ADS)

    Williams, G. P.; Godel, J. B.; Brown, G. S.; Liebmann, W.

    Semiconductors comprise a greater part of the United States economy than the aircraft, steel, and automobile industries combined. In future the semiconductor manufacturing industry will be forced to switch away from present optical manufacturing methods in the early to mid 1990s. X ray lithography has emerged as the leading contender for continuing production below the 0.4 micron level. Brookhaven National Laboratory began a series of workshops on x ray lithography in 1986 to examine key issues and in particular to enable United States industry to take advantage of the technical base established in this field. Since accelerators provide the brightest sources for x ray lithography, most of the research and development to date has taken place at large accelerator-based research centers such as Brookhaven, the University of Wisconsin, and Stanford. The goals of this Fifth Brookhaven Workshop were to review progress and goals since the last workshop and to establish a blueprint for the future. The meeting focused on the exposure tool, that is, a term defined as the source plus beamline and stepper. In order to assess the appropriateness of schedules for the development of this tool, other aspects of the required technology such as masks, resists and inspection and repair were also reviewed. To accomplish this, two working groups were set up, one to review the overall aspects of x ray lithography and set a time frame, the other to focus on sources.

  17. Nanotechnology and in Situ Remediation: A Review of the Benefits and Potential Risks

    PubMed Central

    Karn, Barbara; Kuiken, Todd; Otto, Martha

    2009-01-01

    Objective Although industrial sectors involving semiconductors; memory and storage technologies; display, optical, and photonic technologies; energy; biotechnology; and health care produce the most products that contain nanomaterials, nanotechnology is also used as an environmental technology to protect the environment through pollution prevention, treatment, and cleanup. In this review, we focus on environmental cleanup and provide a background and overview of current practice; research findings; societal issues; potential environment, health, and safety implications; and future directions for nanoremediation. We do not present an exhaustive review of chemistry/engineering methods of the technology but rather an introduction and summary of the applications of nanotechnology in remediation. We also discuss nanoscale zerovalent iron in detail. Data sources We searched the Web of Science for research studies and accessed recent publicly available reports from the U.S. Environmental Protection Agency and other agencies and organizations that addressed the applications and implications associated with nanoremediation techniques. We also conducted personal interviews with practitioners about specific site remediations. Data synthesis We aggregated information from 45 sites, a representative portion of the total projects under way, to show nanomaterials used, types of pollutants addressed, and organizations responsible for each site. Conclusions Nanoremediation has the potential not only to reduce the overall costs of cleaning up large-scale contaminated sites but also to reduce cleanup time, eliminate the need for treatment and disposal of contaminated soil, and reduce some contaminant concentrations to near zero—all in situ. Proper evaluation of nanoremediation, particularly full-scale ecosystem-wide studies, needs to be conducted to prevent any potential adverse environmental impacts. PMID:20049198

  18. Light-matter Interactions in Semiconductors and Metals: From Nitride Optoelectronics to Quantum Plasmonics

    NASA Astrophysics Data System (ADS)

    Narang, Prineha

    This thesis puts forth a theory-directed approach coupled with spectroscopy aimed at the discovery and understanding of light-matter interactions in semiconductors and metals. The first part of the thesis presents the discovery and development of Zn-IV nitride materials. The commercial prominence in the optoelectronics industry of tunable semiconductor alloy materials based on nitride semiconductor devices, specifically InGaN, motivates the search for earth-abundant alternatives for use in efficient, high-quality optoelectronic devices. II-IV-N2 compounds, which are closely related to the wurtzite-structured III-N semiconductors, have similar electronic and optical properties to InGaN namely direct band gaps, high quantum efficiencies and large optical absorption coefficients. The choice of different group II and group IV elements provides chemical diversity that can be exploited to tune the structural and electronic properties through the series of alloys. The first theoretical and experimental investigation of the ZnSnxGe1--xN2 series as a replacement for III-nitrides is discussed here. The second half of the thesis shows ab-initio calculations for surface plasmons and plasmonic hot carrier dynamics. Surface plasmons, electromagnetic modes confined to the surface of a conductor-dielectric interface, have sparked renewed interest because of their quantum nature and their broad range of applications. The decay of surface plasmons is usually a detriment in the field of plasmonics, but the possibility to capture the energy normally lost to heat would open new opportunities in photon sensors, energy conversion devices and switching. A theoretical understanding of plasmon-driven hot carrier generation and relaxation dynamics in the ultrafast regime is presented here. Additionally calculations for plasmon-mediated upconversion as well as an energy-dependent transport model for these non-equilibrium carriers are shown. Finally, this thesis gives an outlook on the potential of non-equilibrium phenomena in metals and semiconductors for future light-based technologies.

  19. Injection molding of high precision optics for LED applications made of liquid silicone rubber

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hopmann, Christian; Röbig, Malte

    Light Emitting Diodes (LED) conquer the growing global market of lighting technologies. Due to their advantages, they are increasingly used in consumer products, in lighting applications in the home and in the mobility sector as well as in industrial applications. Particularly, with regard to the increasing use of high-power LED (HP-LED) the materials in the surrounding area of the light emitting semiconductor chip are of utmost importance. While the materials behind the semiconductor chip are optimized for maximum heat dissipation, the materials currently used for the encapsulation of the semiconductor chip (primary optics) and the secondary optics encounter their limitsmore » due to the high temperatures. In addition certain amounts of blue UV radiation degrade the currently used materials such as epoxy resins or polyurethanes for primary optics. In the context of an ongoing joint research project with various partners from the industry, an innovative manufacturing method for high precision optics for LED applications made of liquid silicone rubber (LSR) is analyzed at the Institut of Plastics Processing (IKV), Aachen. The aim of this project is to utilize the material-specific advantages of high transparent LSR, especially the excellent high temperature resistance and the great freedom in design. Therefore, a high integrated injection molding process is developed. For the production of combined LED primary and secondary optics a LED board is placed in an injection mold and overmolded with LSR. Due to the integrated process and the reduction of subcomponents like the secondary optics the economics of the production process can be improved significantly. Furthermore combined LED optics offer an improved effectiveness, because there are no losses of the light power at the transition of the primary and secondary optics.« less

  20. George E. Pake Prize: A Few Challenges in the Evolution of Semiconductor Device/Manufacturing Technology

    NASA Astrophysics Data System (ADS)

    Doering, Robert

    In the early 1980s, the semiconductor industry faced the related challenges of ``scaling through the one-micron barrier'' and converting single-level-metal NMOS integrated circuits to multi-level-metal CMOS. Multiple advances in lithography technology and device materials/process integration led the way toward the deep-sub-micron transistors and interconnects that characterize today's electronic chips. In the 1990s, CMOS scaling advanced at an accelerated pace enabled by rapid advances in many aspects of optical lithography. However, the industry also needed to continue the progress in manufacturing on ever-larger silicon wafers to maintain economy-of-scale trends. Simultaneously, the increasing complexity and absolute-precision requirements of manufacturing compounded the necessity for new processes, tools, and control methodologies. This talk presents a personal perspective on some of the approaches that addressed the aforementioned challenges. In particular, early work on integrating silicides, lightly-doped-drain FETs, shallow recessed isolation, and double-level metal will be discussed. In addition, some pioneering efforts in deep-UV lithography and single-wafer processing will be covered. The latter will be mainly based on results from the MMST Program - a 100 M +, 5-year R&D effort, funded by DARPA, the U.S. Air Force, and Texas Instruments, that developed a wide range of new technologies for advanced semiconductor manufacturing. The major highlight of the program was the demonstration of sub-3-day cycle time for manufacturing 350-nm CMOS integrated circuits in 1993. This was principally enabled by the development of: (1) 100% single-wafer processing, including rapid-thermal processing (RTP), and (2) computer-integrated-manufacturing (CIM), including real-time, in-situ process control.

  1. Review on analog/radio frequency performance of advanced silicon MOSFETs

    NASA Astrophysics Data System (ADS)

    Passi, Vikram; Raskin, Jean-Pierre

    2017-12-01

    Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor (MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This downscaling, which has proved beneficial to digital circuits, is primarily the result of the need for improved circuit performance and cost reduction and has resulted in tremendous reduction of the carrier transit time across the channel, thereby resulting in very high cut-off frequencies. It is only in recent decades that complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) has been considered as the radio frequency (RF) technology of choice. In this review, the status of the digital, analog and RF figures of merit (FoM) of silicon-based FETs is presented. State-of-the-art devices with very good performance showing low values of drain-induced barrier lowering, sub-threshold swing, high values of gate transconductance, Early voltage, cut-off frequencies, and low minimum noise figure, and good low-frequency noise characteristic values are reported. The dependence of these FoM on the device gate length is also shown, helping the readers to understand the trends and challenges faced by shorter CMOS nodes. Device performance boosters including silicon-on-insulator substrates, multiple-gate architectures, strain engineering, ultra-thin body and buried-oxide and also III-V and 2D materials are discussed, highlighting the transistor characteristics that are influenced by these boosters. A brief comparison of the two main contenders in continuing Moore’s law, ultra-thin body buried-oxide and fin field-effect transistors are also presented. The authors would like to mention that despite extensive research carried out in the semiconductor industry, silicon-based MOSFET will continue to be the driving force in the foreseeable future.

  2. Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

    NASA Astrophysics Data System (ADS)

    Opalevs, D.; Scholz, M.; Stuhler, J.; Gilfert, C.; Liu, L. J.; Wang, X. Y.; Vetter, A.; Kirner, R.; Scharf, T.; Noell, W.; Rockstuhl, C.; Li, R. K.; Chen, C. T.; Voelkel, R.; Leisching, P.

    2018-02-01

    We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

  3. A Theoretical Search for Supervelocity Semiconductors

    DTIC Science & Technology

    1992-10-01

    interfaces, doping control and compositional uniformity with atomic level dimensions. The development of ALE may very well prove to be the ultimate growth...pseudomorphic or strained-layer devices. These structures permit extended compositional ranges and, thus, have a number of potential advantages such as...in silicon devices For the past fifteen years, the silicon MOSFET industry has been dealing increasingly with prob- lems related to hot electron

  4. Fourth International Congress on Industrial and Applied Mathematics. Book of Abstracts

    DTIC Science & Technology

    1999-01-01

    Dipartimento di Matematica , Universita’ di Pavia, Italy) Logarithmic Sobolev inequalities for kinetic semiconductor equations In this paper we analyze the...terms of Whitney forms. FERNANDES, Paolo (Istituto per la Matematica Applicata del Consiglio Nazionale delle Ricerche, Italy) Dealing with realistic... Matematica dell Universita di Pavia, Italy. PERUGIA, Ilaria (Diaprtimento di Matematica , Universita’ di Pavia - Italy) An adaptive field-based method

  5. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentration, temperature, ion energy distribution, and electron number density. A wide variety of diagnostic techniques are under development through this consortium grant to measure these parameters. including molecular beam mass spectrometry (MBMS). Fourier transform infrared (FTIR) spectroscopy, broadband ultraviolet (UV) absorption spectroscopy, a compensated Langmuir probe. Additional diagnostics. Such as microwave interferometry and microwave absorption for measurements of plasma density and radical concentrations are also planned.

  6. Mask Industry Assessment: 2011

    NASA Astrophysics Data System (ADS)

    Chan, Y. David

    2011-11-01

    A survey supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the tenth in the current series of annual reports. With ongoing industry support, the report has been used as one of the baselines to gain perspective on the technical and business status of the mask and microelectronics industries. It continues to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was essentially the same as the 2005 through 2010 surveys. Questions are grouped into following categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

  7. Mask industry assessment: 2008

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2008-10-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists, merchant mask suppliers, and industry equipment makers. This year's assessment is the seventh in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2007 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry.

  8. Mask Industry Assessment: 2010

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Chan, David Y.

    2010-09-01

    A survey created supported by SEMATECH and administered by David Powell Consulting was sent to microelectronics industry leaders to gather information about the mask industry as an objective assessment of its overall condition. The survey was designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the ninth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. It will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey was basically the same as the 2005 through 2009 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that result in a detailed profile of both the business and technical status of the critical mask industry. This profile combined with the responses to past surveys represents a comprehensive view of changes in the industry.

  9. A Survey of Terrestrial Approaches to the Challenge of Lunar Dust Containment

    NASA Technical Reports Server (NTRS)

    Aguilera, Tatiana; Perry, Jay L.

    2009-01-01

    Numerous technical challenges exist to successfully extend lunar surface exploration beyond the tantalizing first steps of Apollo. Among these is the challenge of lunar dust intrusion into the cabin environment. Addressing this challenge includes the design of barriers to intrusion as well as techniques for removing the dust from the cabin atmosphere. Opportunities exist for adapting approaches employed in dusty industrial operations and pristine manufacturing environments to cabin environmental quality maintenance applications. A survey of process technologies employed by the semiconductor, pharmaceutical, food processing, and mining industries offers insight into basic approaches that may be suitable for adaptation to lunar surface exploration applications.

  10. SOI technology for power management in automotive and industrial applications

    NASA Astrophysics Data System (ADS)

    Stork, Johannes M. C.; Hosey, George P.

    2017-02-01

    Semiconductor on Insulator (SOI) technology offers an assortment of opportunities for chip manufacturers in the Power Management market. Recent advances in the automotive and industrial markets, along with emerging features, the increasing use of sensors, and the ever-expanding "Internet of Things" (IoT) are providing for continued growth in these markets while also driving more complex solutions. The potential benefits of SOI include the ability to place both high-voltage and low-voltage devices on a single chip, saving space and cost, simplifying designs and models, and improving performance, thereby cutting development costs and improving time to market. SOI also offers novel new approaches to long-standing technologies.

  11. Big Data Analytics in Chemical Engineering.

    PubMed

    Chiang, Leo; Lu, Bo; Castillo, Ivan

    2017-06-07

    Big data analytics is the journey to turn data into insights for more informed business and operational decisions. As the chemical engineering community is collecting more data (volume) from different sources (variety), this journey becomes more challenging in terms of using the right data and the right tools (analytics) to make the right decisions in real time (velocity). This article highlights recent big data advancements in five industries, including chemicals, energy, semiconductors, pharmaceuticals, and food, and then discusses technical, platform, and culture challenges. To reach the next milestone in multiplying successes to the enterprise level, government, academia, and industry need to collaboratively focus on workforce development and innovation.

  12. Design and exploration of semiconductors from first principles: A review of recent advances

    NASA Astrophysics Data System (ADS)

    Oba, Fumiyasu; Kumagai, Yu

    2018-06-01

    Recent first-principles approaches to semiconductors are reviewed, with an emphasis on theoretical insight into emerging materials and in silico exploration of as-yet-unreported materials. As relevant theory and methodologies have developed, along with computer performance, it is now feasible to predict a variety of material properties ab initio at the practical level of accuracy required for detailed understanding and elaborate design of semiconductors; these material properties include (i) fundamental bulk properties such as band gaps, effective masses, dielectric constants, and optical absorption coefficients; (ii) the properties of point defects, including native defects, residual impurities, and dopants, such as donor, acceptor, and deep-trap levels, and formation energies, which determine the carrier type and density; and (iii) absolute and relative band positions, including ionization potentials and electron affinities at semiconductor surfaces, band offsets at heterointerfaces between dissimilar semiconductors, and Schottky barrier heights at metal–semiconductor interfaces, which are often discussed systematically using band alignment or lineup diagrams. These predictions from first principles have made it possible to elucidate the characteristics of semiconductors used in industry, including group III–V compounds such as GaN, GaP, and GaAs and their alloys with related Al and In compounds; amorphous oxides, represented by In–Ga–Zn–O transparent conductive oxides (TCOs), represented by In2O3, SnO2, and ZnO; and photovoltaic absorber and buffer layer materials such as CdTe and CdS among group II–VI compounds and chalcopyrite CuInSe2, CuGaSe2, and CuIn1‑ x Ga x Se2 (CIGS) alloys, in addition to the prototypical elemental semiconductors Si and Ge. Semiconductors attracting renewed or emerging interest have also been investigated, for instance, divalent tin compounds, including SnO and SnS; wurtzite-derived ternary compounds such as ZnSnN2 and CuGaO2; perovskite oxides such as SrTiO3 and BaSnO3; and organic–inorganic hybrid perovskites, represented by CH3NH3PbI3. Moreover, the deployment of first-principles calculations allows us to predict the crystal structure, stability, and properties of as-yet-unreported materials. Promising materials have been explored via high-throughput screening within either publicly available computational databases or unexplored composition and structure space. Reported examples include the identification of nitride semiconductors, TCOs, solar cell photoabsorber materials, and photocatalysts, some of which have been experimentally verified. Machine learning in combination with first-principles calculations has emerged recently as a technique to accelerate and enhance in silico screening. A blend of computation and experimentation with data science toward the development of materials is often referred to as materials informatics and is currently attracting growing interest.

  13. Silicon material technology status. [assessment for electronic and photovoltaic applications

    NASA Technical Reports Server (NTRS)

    Lutwack, R.

    1983-01-01

    Silicon has been the basic element for the electronic and photovoltaic industries. The use of silicon as the primary element for terrestrial photovoltaic solar arrays is projected to continue. The reasons for this projection are related to the maturity of silicon technology, the ready availability of extremely pure silicon, the performance of silicon solar cells, and the considerable present investment in technology and manufacturing facilities. The technologies for producing semiconductor grade silicon and, to a lesser extent, refined metallurgical grade silicon are considered. It is pointed out that nearly all of the semiconductor grade silicon is produced by processes based on the Siemens deposition reactor, a technology developed 26 years ago. The state-of-the-art for producing silicon by this process is discussed. It is expected that efforts to reduce polysilicon process costs will continue.

  14. Dual-comb spectroscopy of water vapor with a free-running semiconductor disk laser.

    PubMed

    Link, S M; Maas, D J H C; Waldburger, D; Keller, U

    2017-06-16

    Dual-comb spectroscopy offers the potential for high accuracy combined with fast data acquisition. Applications are often limited, however, by the complexity of optical comb systems. Here we present dual-comb spectroscopy of water vapor using a substantially simplified single-laser system. Very good spectroscopy measurements with fast sampling rates are achieved with a free-running dual-comb mode-locked semiconductor disk laser. The absolute stability of the optical comb modes is characterized both for free-running operation and with simple microwave stabilization. This approach drastically reduces the complexity for dual-comb spectroscopy. Band-gap engineering to tune the center wavelength from the ultraviolet to the mid-infrared could optimize frequency combs for specific gas targets, further enabling dual-comb spectroscopy for a wider range of industrial applications. Copyright © 2017, American Association for the Advancement of Science.

  15. Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

    2003-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

  16. Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

    NASA Technical Reports Server (NTRS)

    Fossum, Eric R. (Inventor); Mendis, Sunetra K. (Inventor); Pain, Bedabrata (Inventor); Nixon, Robert H. (Inventor); Zhou, Zhimin (Inventor)

    2000-01-01

    An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

  17. Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in Mn3Mn1-x Pd x N thin films

    NASA Astrophysics Data System (ADS)

    Xu, T.; Ji, G. P.; Cao, Z. X.; Ji, A. L.

    2018-02-01

    Thin films of antiperovskite Mn3Mn1-x Pd x N with x up to 0.36 were grown by reactive magnetron co-sputtering method. All the deposits exhibit a [1 0 0] preferential orientation, with the lattice constant slightly enlarged in samples with ever more Pd atoms partially substituting the MnI atoms in Mn3MnN matrix. The replacement of MnI atoms in antiperovskite structure by Pd atoms, besides reducing the saturation magnetization, also invokes a metal-semiconductor transition which occurs remarkably at a comparable resistivity level. Moreover, a positive magnetoresistance was observed in samples of a high Pd content. These tunable electrical and magnetic properties of ternary antiperovskite compounds might promise some ingenious applications in electronic industry.

  18. Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures

    NASA Astrophysics Data System (ADS)

    Crook, Adam M.; Nair, Hari P.; Bank, Seth R.

    2011-03-01

    We report on the integration of semimetallic ErAs nanoparticles with high optical quality GaAs-based semiconductors, grown by molecular beam epitaxy. Secondary ion mass spectrometry and photoluminescence measurements provide evidence of surface segregation and incorporation of erbium into layers grown with the erbium cell hot, despite the closed erbium source shutter. We establish the existence of a critical areal density of the surface erbium layer, below which the formation of ErAs precipitates is suppressed. Based upon these findings, we demonstrate a method for overgrowing ErAs nanoparticles with III-V layers of high optical quality, using subsurface ErAs nanoparticles as a sink to deplete the surface erbium concentration. This approach provides a path toward realizing optical devices based on plasmonic effects in an epitaxially-compatible semimetal/semiconductor system.

  19. Influence of non steady gravity on natural convection during micro-gravity solidification of semiconductors. I - Time scale analysis. II - Implications for crystal growth experiments

    NASA Technical Reports Server (NTRS)

    Griffin, P. R.; Motakef, S.

    1989-01-01

    Consideration is given to the influence of temporal variations in the magnitude of gravity on natural convection during unidirectional solidification of semiconductors. It is shown that the response time to step changes in g at low Rayleigh numbers is controlled by the momentum diffusive time scale. At higher Rayleigh numbers, the response time to increases in g is reduced because of inertial effects. The degree of perturbation of flow fields by transients in the gravitational acceleration on the Space Shuttle and the Space Station is determined. The analysis is used to derive the requirements for crystal growth experiments conducted on low duration low-g vehicles. Also, the effectiveness of sounding rockets and KC-135 aircraft for microgravity experiments is examined.

  20. Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Abernathy, C.R.; Hobson, W.S.; Hong, J.

    1998-11-04

    Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunctionmore » bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.« less

  1. Multinary I-III-VI2 and I2-II-IV-VI4 Semiconductor Nanostructures for Photocatalytic Applications.

    PubMed

    Regulacio, Michelle D; Han, Ming-Yong

    2016-03-15

    Semiconductor nanostructures that can effectively serve as light-responsive photocatalysts have been of considerable interest over the past decade. This is because their use in light-induced photocatalysis can potentially address some of the most serious environmental and energy-related concerns facing the world today. One important application is photocatalytic hydrogen production from water under solar radiation. It is regarded as a clean and sustainable approach to hydrogen fuel generation because it makes use of renewable resources (i.e., sunlight and water), does not involve fossil fuel consumption, and does not result in environmental pollution or greenhouse gas emission. Another notable application is the photocatalytic degradation of nonbiodegradable dyes, which offers an effective way of ridding industrial wastewater of toxic organic pollutants prior to its release into the environment. Metal oxide semiconductors (e.g., TiO2) are the most widely studied class of semiconductor photocatalysts. Their nanostructured forms have been reported to efficiently generate hydrogen from water and effectively degrade organic dyes under ultraviolet-light irradiation. However, the wide band gap characteristic of most metal oxides precludes absorption of light in the visible region, which makes up a considerable portion of the solar radiation spectrum. Meanwhile, nanostructures of cadmium chalcogenide semiconductors (e.g., CdS), with their relatively narrow band gap that can be easily adjusted through size control and alloying, have displayed immense potential as visible-light-responsive photocatalysts, but the intrinsic toxicity of cadmium poses potential risks to human health and the environment. In developing new nanostructured semiconductors for light-driven photocatalysis, it is important to choose a semiconducting material that has a high absorption coefficient over a wide spectral range and is safe for use in real-world settings. Among the most promising candidates are the multinary chalcogenide semiconductors (MCSs), which include the ternary I-III-VI2 semiconductors (e.g., AgGaS2, CuInS2, and CuInSe2) and the quaternary I2-II-IV-VI4 semiconductors (e.g., Cu2ZnGeS4, Cu2ZnSnS4, and Ag2ZnSnS4). These inorganic compounds consist of environmentally benign elemental components, exhibit excellent light-harvesting properties, and possess band gap energies that are well-suited for solar photon absorption. Moreover, the band structures of these materials can be conveniently modified through alloying to boost their ability to harvest visible photons. In this Account, we provide a summary of recent research on the use of ternary I-III-VI2 and quaternary I2-II-IV-VI4 semiconductor nanostructures for light-induced photocatalytic applications, with focus on hydrogen production and organic dye degradation. We include a review of the solution-based methods that have been employed to prepare multinary chalcogenide semiconductor nanostructures of varying compositions, sizes, shapes, and crystal structures, which are factors that are known to have significant influence on the photocatalytic activity of semiconductor photocatalysts. The enhancement of photocatalytic performance through creation of hybrid nanoscale architectures is also presented. Lastly, views on the current challenges and future directions are discussed in the concluding section.

  2. Commentary: Forces That Drive the Vape Shop Industry and Implications for the Health Professions.

    PubMed

    Sussman, Steve; Baezconde-Garbanati, Lourdes; Garcia, Robert; Barker, Dianne C; Samet, Jonathan M; Leventhal, Adam; Unger, Jennifer B

    2016-09-01

    At least three factors may be driving the evolution of the vape shop industry, a rapidly growing market sector that specializes in the sales of electronic cigarettes: (1) the tobacco industry, (2) the public health sector and its diverse stakeholders, and (3) consumer demand. These influences and the responses of the vape shop sector have resulted in a rapidly changing landscape. This commentary briefly discusses these three factors and the implications for the health professions, as they address the vape shop industry and its consequences for public health. © The Author(s) 2015.

  3. Commentary: Forces That Drive the Vape Shop Industry and Implications for the Health Professions

    PubMed Central

    Sussman, Steve; Baezconde-Garbanati, Lourdes; Garcia, Robert; Barker, Dianne C.; Samet, Jonathan M.; Leventhal, Adam; Unger, Jennifer B.

    2016-01-01

    At least three factors may be driving the evolution of the vape shop industry, a rapidly growing market sector that specializes in the sales of electronic cigarettes: (1) the tobacco industry, (2) the public health sector and its diverse stakeholders, and (3) consumer demand. These influences and the responses of the vape shop sector have resulted in a rapidly changing landscape. This commentary briefly discusses these three factors and the implications for the health professions, as they address the vape shop industry and its consequences for public health. PMID:25967071

  4. Mask industry assessment trend analysis: 2010

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2010-05-01

    Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the eighth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Its results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2009. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

  5. Direct etch method for microfludic channel and nanoheight post-fabrication by picoliter droplets

    NASA Astrophysics Data System (ADS)

    Demirci, Utkan; Toner, Mehmet

    2006-01-01

    Photolithography is an expensive and significant step in microfabrication. Approaches that could change lithography would create an impact on semiconductor industry and microelectromechanical systems technologies. We demonstrate a direct etching method by ejecting etchant droplets at desired locations by using microdroplet ejector arrays. This method could be used for easy fabrication of poly(dimethylsiloxane) microfluidic channels and nanometer height postlike structures in microfluidic channels.

  6. Synthesis of Polyimides Produced from Novel High Temperature Polyhedral Oligomeric Silsesquioxane Dianilines

    DTIC Science & Technology

    2009-03-26

    spacecraft materials including solar arrays, thermal insulation blankets , and space inflatable structures, and in components in modern aircraft. PIs are...well known for their thermal stability but are prone to long-term oxidative degadation and are notorious for having hygrothermal issues, especially...applications such as circuit-printing 61ms and semiconductor coatings in the micmle~tronics industry1, spacecraft materials2 including solar arrays, thennal

  7. Macromolecular Crystal Quality

    NASA Technical Reports Server (NTRS)

    Snell, Edward H.; Borgstahl, Gloria E. O.; Bellamy, Henry D.; Curreri, Peter A. (Technical Monitor)

    2001-01-01

    There are many ways of judging a good crystal. Which we use depends on the qualities we seek. For gemstones size, clarity and impurity levels (color) are paramount. For the semiconductor industry purity is probably the most important quality. For the structural crystallographer the primary desideratum is the somewhat more subtle concept of internal order. In this chapter we discuss the effect of internal order (or the lack of it) on the crystal's diffraction properties.

  8. Hypersonic Composites Resist Extreme Heat and Stress

    NASA Technical Reports Server (NTRS)

    2007-01-01

    Through research contracts with NASA, Materials and Electrochemical Research Corporation (MER), of Tucson, Arizona, contributed a number of technologies to record-breaking hypersonic flights. Through this research, MER developed a coating that successfully passed testing to simulate Mach 10 conditions, as well as provide several additional carbon-carbon (C-C) composite components for the flights. MER created all of the leading edges for the X-43A test vehicles at Dryden-considered the most critical parts of this experimental craft. In addition to being very heat resistant, the coating had to be very lightweight and thin, as the aircraft was designed to very precise specifications and could not afford to have a bulky coating. MER patented its carbon-carbon (C-C) composite process and then formed a spinoff company, Frontier Materials Corporation (FMC), also based in Tucson. FMC is using the patent in conjunction with low-cost PAN (polyacrylonitrile)-based fibers to introduce these materials to the commercial markets. The C-C composites are very lightweight and exceptionally strong and stiff, even at very high temperatures. The composites have been used in industrial heating applications, the automotive and aerospace industries, as well as in glass manufacturing and on semiconductors. Applications also include transfer components for glass manufacturing and structural members for carrier support in semiconductor processing.

  9. Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries

    PubMed Central

    Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

    2016-01-01

    Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments. PMID:27681994

  10. Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries.

    PubMed

    Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

    2016-09-29

    Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments.

  11. Accumulation of heavy metals and trace elements in fluvial sediments received effluents from traditional and semiconductor industries

    NASA Astrophysics Data System (ADS)

    Hsu, Liang-Ching; Huang, Ching-Yi; Chuang, Yen-Hsun; Chen, Ho-Wen; Chan, Ya-Ting; Teah, Heng Yi; Chen, Tsan-Yao; Chang, Chiung-Fen; Liu, Yu-Ting; Tzou, Yu-Min

    2016-09-01

    Metal accumulation in sediments threatens adjacent ecosystems due to the potential of metal mobilization and the subsequent uptake into food webs. Here, contents of heavy metals (Cd, Cr, Cu, Ni, Pb, and Zn) and trace elements (Ga, In, Mo, and Se) were determined for river waters and bed sediments that received sewage discharged from traditional and semiconductor industries. We used principal component analysis (PCA) to determine the metal distribution in relation to environmental factors such as pH, EC, and organic matter (OM) contents in the river basin. While water PCA categorized discharged metals into three groups that implied potential origins of contamination, sediment PCA only indicated a correlation between metal accumulation and OM contents. Such discrepancy in metal distribution between river water and bed sediment highlighted the significance of physical-chemical properties of sediment, especially OM, in metal retention. Moreover, we used Se XANES as an example to test the species transformation during metal transportation from effluent outlets to bed sediments and found a portion of Se inventory shifted from less soluble elemental Se to the high soluble and toxic selenite and selenate. The consideration of environmental factors is required to develop pollution managements and assess environmental risks for bed sediments.

  12. A Summary of Lightpipe Radiation Thermometry Research at NIST

    PubMed Central

    Tsai, Benjamin K.

    2006-01-01

    During the last 10 years, research in light-pipe radiation thermometry has significantly reduced the uncertainties for temperature measurements in semiconductor processing. The National Institute of Standards and Technology (NIST) has improved the calibration of lightpipe radiation thermometers (LPRTs), the characterization procedures for LPRTs, the in situ calibration of LPRTs using thin-film thermocouple (TFTC) test wafers, and the application of model-based corrections to improve LPRT spectral radiance temperatures. Collaboration with industry on implementing techniques and ideas established at NIST has led to improvements in temperature measurements in semiconductor processing. LPRTs have been successfully calibrated at NIST for rapid thermal processing (RTP) applications using a sodium heat-pipe blackbody between 700 °C and 900 °C with an uncertainty of about 0.3 °C (k = 1) traceable to the International Temperature Scale of 1990. Employing appropriate effective emissivity models, LPRTs have been used to determine the wafer temperature in the NIST RTP Test Bed with an uncertainty of 3.5 °C. Using a TFTC wafer for calibration, the LPRT can measure the wafer temperature in the NIST RTP Test Bed with an uncertainty of 2.3 °C. Collaborations with industry in characterizing and calibrating LPRTs will be summarized, and future directions for LPRT research will be discussed. PMID:27274914

  13. A Summary of Lightpipe Radiation Thermometry Research at NIST.

    PubMed

    Tsai, Benjamin K

    2006-01-01

    During the last 10 years, research in light-pipe radiation thermometry has significantly reduced the uncertainties for temperature measurements in semiconductor processing. The National Institute of Standards and Technology (NIST) has improved the calibration of lightpipe radiation thermometers (LPRTs), the characterization procedures for LPRTs, the in situ calibration of LPRTs using thin-film thermocouple (TFTC) test wafers, and the application of model-based corrections to improve LPRT spectral radiance temperatures. Collaboration with industry on implementing techniques and ideas established at NIST has led to improvements in temperature measurements in semiconductor processing. LPRTs have been successfully calibrated at NIST for rapid thermal processing (RTP) applications using a sodium heat-pipe blackbody between 700 °C and 900 °C with an uncertainty of about 0.3 °C (k = 1) traceable to the International Temperature Scale of 1990. Employing appropriate effective emissivity models, LPRTs have been used to determine the wafer temperature in the NIST RTP Test Bed with an uncertainty of 3.5 °C. Using a TFTC wafer for calibration, the LPRT can measure the wafer temperature in the NIST RTP Test Bed with an uncertainty of 2.3 °C. Collaborations with industry in characterizing and calibrating LPRTs will be summarized, and future directions for LPRT research will be discussed.

  14. Compact microwave ion source for industrial applications.

    PubMed

    Cho, Yong-Sub; Kim, Dae-Il; Kim, Han-Sung; Seol, Kyung-Tae; Kwon, Hyeok-Jung; Hong, In-Seok

    2012-02-01

    A 2.45 GHz microwave ion source for ion implanters has many good properties for industrial application, such as easy maintenance and long lifetime, and it should be compact for budget and space. But, it has a dc current supply for the solenoid and a rf generator for plasma generation. Usually, they are located on high voltage platform because they are electrically connected with beam extraction power supply. Using permanent magnet solenoid and multi-layer dc break, high voltage deck and high voltage isolation transformer can be eliminated, and the dose rate on targets can be controlled by pulse duty control with semiconductor high voltage switch. Because the beam optics does not change, beam transfer components, such as focusing elements and beam shutter, can be eliminated. It has shown the good performances in budget and space for industrial applications of ion beams.

  15. Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Naquin, Clint; Lee, Mark; Edwards, Hal

    2014-11-24

    Introducing explicit quantum transport into Si transistors in a manner amenable to industrial fabrication has proven challenging. Hybrid field-effect/bipolar Si transistors fabricated on an industrial 45 nm process line are shown to demonstrate explicit quantum transport signatures. These transistors incorporate a lateral ion implantation-defined quantum well (QW) whose potential depth is controlled by a gate voltage (V{sub G}). Quantum transport in the form of negative differential transconductance (NDTC) is observed to temperatures >200 K. The NDTC is tied to a non-monotonic dependence of bipolar current gain on V{sub G} that reduces drain-source current through the QW. These devices establish the feasibility ofmore » exploiting quantum transport to transform the performance horizons of Si devices fabricated in an industrially scalable manner.« less

  16. Fast mask writers: technology options and considerations

    NASA Astrophysics Data System (ADS)

    Litt, Lloyd C.; Groves, Timothy; Hughes, Greg

    2011-04-01

    The semiconductor industry is under constant pressure to reduce production costs even as the complexity of technology increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which have added to the complexity of making masks because of the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low-k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that funding on the order of 50M to 90M for non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development poses a high risk for an individual supplier. The structure of the mask fabrication marketplace separates the mask writer equipment customer (the mask supplier) from the final customer (wafer manufacturer) that will be most effected by the increase in mask cost that will result if a high speed mask writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed.

  17. Application of CdZnTe Gamma-Ray Detector for Imaging Corrosion under Insulation

    NASA Astrophysics Data System (ADS)

    Abdullah, J.; Yahya, R.

    2007-05-01

    Corrosion under insulation (CUI) on the external wall of steel pipes is a common problem in many types of industrial plants. This is mainly due to the presence of moisture or water in the insulation materials. This type of corrosion can cause failures in areas that are not normally of a primary concern to an inspection program. The failures are often the result of localised corrosion and not general wasting over a large area. These failures can tee catastrophic in nature or at least have an adverse economic effect in terms of downtime and repairs. There are a number of techniques used today for CUI investigations. The main ones are profile radiography, pulse eddy current, ultrasonic spot readings and insulation removal. A new system now available is portable Pipe-CUI-Profiler. The nucleonic system is based on dual-beam gamma-ray absorption technique using Cadmium Zinc Telluride (CdZnTe) semiconductor detectors. The Pipe-CUI-Profiler is designed to inspect pipes of internal diameter 50, 65, 80, 90, 100, 125 and 150 mm. Pipeline of these sizes with aluminium or thin steel sheathing, containing fibreglass or calcium silicate insulation to thickness of 25, 40 and 50 mm can be inspected. The system has proven to be a safe, fast and effective method of inspecting pipe in industrial plant operations. This paper describes the application of gamma-ray techniques and CdZnTe semiconductor detectors in the development of Pipe-CUI-Profiler for non-destructive imaging of corrosion under insulation of steel pipes. Some results of actual pipe testing in large-scale industrial plant will be presented.

  18. Addressing Cross-Cultural Teamwork Barriers: Implications for Industry Practice and Higher Education Curricula

    ERIC Educational Resources Information Center

    Levitt, Steven R.

    2016-01-01

    This study explores cultural factors affecting international team dynamics and the implications for industry practice and higher education. Despite decades of studying and experience with cultural diversity, international work groups continue to be challenged by ethnocentrism and prejudices. Central to the context is that cultural differences in…

  19. Determining ultra-low moisture permeation measurement for sealants on OLED encapsulation

    NASA Astrophysics Data System (ADS)

    Choi, Byung Il; Woo, Sang Bong; Kim, Jong Chul; Kim, Seung Hun; Seo, Sang Joon

    2012-12-01

    As the next-generation flexible display elements are very vulnerable to moisture, securing proper encapsulation is a decisive factor in enabling a long working life. Therefore, together with the recent development of plastic barrier films with very low permeabilities, interest in the permeabilities of sealants used for perimetric sealing has been increasing. In this study, equipment with a resolution of approximately ˜10-7 g·day-1 to measure moisture permeability in perimetric sealing was established, and the permeabilities of different sealants were measured. This equipment could have applications not only in the display industry but also in other sectors requiring encapsulation technology, such as the semiconductor and solar cell industries.

  20. Virtual Metrology applied in Run-to-Run Control for a Chemical Mechanical Planarization process

    NASA Astrophysics Data System (ADS)

    Jebri, M. A.; El Adel, E. M.; Graton, G.; Ouladsine, M.; Pinaton, J.

    2017-01-01

    This paper deals with missing data in semiconductor manufacturing derived from a measurement sampling strategies. The idea is to construct a virtual metrology module to estimate non measured variables using a new modified Just-In-Time Learning approach (JITL). The aim of this paper is to integrate estimated data into product control loop. In collaboration with our industrial partner STMicroelectronics Rousset, the accuracy of the proposed method is illustrated by using industrial data-sets derived from Chemical Mechanical Planarization (CMP) process that enables us to compare results obtained with the classical and the modified version of JITL approach. Then, the contribution of the estimated data is shown in product quality improvement.

  1. Methodology for an occupational risk assessment: an evaluation of four processes for the fabrication of photovoltaic cells.

    PubMed

    Ungers, L J; Moskowitz, P D; Owens, T W; Harmon, A D; Briggs, T M

    1982-02-01

    Determining occupational health and safety risks posed by emerging technologies is difficult because of limited statistics. Nevertheless, estimates of such risks must be constructed to permit comparison of various technologies to identify the most attractive processes. One way to estimate risks is to use statistics on related industries. Based on process labor requirements and associated occupational health data, risks to workers and to society posed by an emerging technology can be calculated. Using data from the California semiconductor industry, this study applies a five-step occupational risk assessment procedure to four processes for the fabrication of photovoltaic cells. The validity of the occupational risk assessment method is discussed.

  2. Mask automation: need a revolution in mask makers and equipment industry

    NASA Astrophysics Data System (ADS)

    Moon, Seong-yong; Yu, Sang-yong; Noh, Young-hwa; Son, Ki-jung; Lee, Hyun-Joo; Cho, Han-Ku

    2013-09-01

    As improving device integration for the next generation, high performance and cost down are also required accordingly in semiconductor business. Recently, significant efforts have been given on putting EUV technology into fabrication in order to improve device integration. At the same time, 450mm wafer manufacturing environment has been considered seriously in many ways in order to boost up the productivity. Accordingly, 9-inch mask has been discussed in mask fabrication business recently to support 450mm wafer manufacturing environment successfully. Although introducing 9-inch mask can be crucial for mask industry, multi-beam technology is also expected as another influential turning point to overcome currently the most critical issue in mask industry, electron beam writing time. No matter whether 9-inch mask or multi-beam technology will be employed or not, mask quality and productivity will be the key factors to survive from the device competition. In this paper, the level of facility automation in mask industry is diagnosed and analyzed and the automation guideline is suggested for the next generation.

  3. Crystal Growth Technology

    NASA Astrophysics Data System (ADS)

    Scheel, Hans J.; Fukuda, Tsuguo

    2004-06-01

    This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics:

      General aspects of crystal growth technology Silicon Compound semiconductors Oxides and halides Crystal machining Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.

    • Digital terrain modeling and industrial surface metrology: Converging realms

      USGS Publications Warehouse

      Pike, R.J.

      2001-01-01

      Digital terrain modeling has a micro-and nanoscale counterpart in surface metrology, the numerical characterization of industrial surfaces. Instrumentation in semiconductor manufacturing and other high-technology fields can now contour surface irregularities down to the atomic scale. Surface metrology has been revolutionized by its ability to manipulate square-grid height matrices that are analogous to the digital elevation models (DEMs) used in physical geography. Because the shaping of industrial surfaces is a spatial process, the same concepts of analytical cartography that represent ground-surface form in geography evolved independently in metrology: The surface topography of manufactured components, exemplified here by automobile-engine cylinders, is routinely modeled by variogram analysis, relief shading, and most other techniques of parameterization and visualization familiar to geography. This article introduces industrial surface-metrology, examines the field in the context of terrain modeling and geomorphology and notes their similarities and differences, and raises theoretical issues to be addressed in progressing toward a unified practice of surface morphometry.

    • Teradiode's high brightness semiconductor lasers

      NASA Astrophysics Data System (ADS)

      Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

      2016-03-01

      TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, <0.08 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. Our TeraBlade industrial platform achieves world-record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

    • Mask industry assessment: 2009

      NASA Astrophysics Data System (ADS)

      Hughes, Greg; Yun, Henry

      2009-10-01

      Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH and administered by David Powell Consulting to gather information about the mask industry as an objective assessment of its overall condition. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the eighth in the current series of annual reports. With ongoing industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments pertaining to critical path issues. This year's survey is basically the same as the 2005 through 2008 surveys. Questions are grouped into categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that create a detailed profile of both the business and technical status of the critical mask industry. This in combination with the past surveys represents a comprehensive view of changes in the industry.

    • Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures

      DOE Office of Scientific and Technical Information (OSTI.GOV)

      Haur Kao, Chyuan; Chun Liu, Che; Ueng, Herng-Yih

      2014-05-14

      Multianalyte electrolyte–insulator–semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na{sup +}, K{sup +}, urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 °C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed formore » use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications.« less

    • Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches.

      PubMed

      Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li

      2014-09-01

      A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ~40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

    • Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

      NASA Astrophysics Data System (ADS)

      Su, Ming; Chen, Chingchi; Rajan, Siddharth

      2013-07-01

      GaN, a wide bandgap semiconductor successfully implemented in optical and high-speed electronic devices, has gained momentum in recent years for power electronics applications. Along with rapid progress in material and device processing technologies, high-voltage transistors over 600 V have been reported by a number of teams worldwide. These advances make GaN highly attractive for the growing market of electrified vehicles, which currently employ bipolar silicon devices in the 600-1200 V class for the traction inverter. However, to capture this billion-dollar power market, GaN has to compete with existing IGBT products and deliver higher performance at comparable or lower cost. This paper reviews key achievements made by the GaN semiconductor industry, requirements of the automotive electric drive system and remaining challenges for GaN power devices to fit in the inverter application of hybrid vehicles.

    • DOE Office of Scientific and Technical Information (OSTI.GOV)

      Chang, Choong Koo; Park, Hyo Jeong; Kim, In Chool

      Reserve margins of Korea Electric Power Corporation (KEPCO) was 12% in 1993, however it was reduced to less than 3% in the summer of 1994 due to increase of electric power consumption caused by life style change based on economic growth. Therefore stable supply of electric power to industrial plant was threatened during last summer`s peak. The process of semiconductor manufacturing is very precious and full processing time reaches several months. Furthermore interruption of power supply to the process causes abortion of every product in the process. Therefore, power failure of less than one (1) second, may result in enormousmore » loss of capital. In order to protect disaster caused by power shortage during summer peaks. Samsung Electronics Co., Ltd (SEC) planned to construct LNG combined cycle power plant for the Klheung semiconductor plant which is the world`s leading maker of dynamic random access memory (DRAM) chips.« less

    • Scalable maskless patterning of nanostructures using high-speed scanning probe arrays

      NASA Astrophysics Data System (ADS)

      Chen, Chen; Akella, Meghana; Du, Zhidong; Pan, Liang

      2017-08-01

      Nanoscale patterning is the key process to manufacture important products such as semiconductor microprocessors and data storage devices. Many studies have shown that it has the potential to revolutionize the functions of a broad range of products for a wide variety of applications in energy, healthcare, civil, defense and security. However, tools for mass production of these devices usually cost tens of million dollars each and are only affordable to the established semiconductor industry. A new method, nominally known as "pattern-on-the- y", that involves scanning an array of optical or electrical probes at high speed to form nanostructures and offers a new low-cost approach for nanoscale additive patterning. In this paper, we report some progress on using this method to pattern self-assembled monolayers (SAMs) on silicon substrate. We also functionalize the substrate with gold nanoparticle based on the SAM to show the feasibility of preparing amphiphilic and multi-functional surfaces.

    • Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

      NASA Technical Reports Server (NTRS)

      Fossum, Eric R. (Inventor); Nakamura, Junichi (Inventor); Kemeny, Sabrina E. (Inventor)

      2005-01-01

      An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

    • Research and Design on a Product Data Definition System of Semiconductor Packaging Industry

      NASA Astrophysics Data System (ADS)

      Shi, Jinfei; Ma, Qingyao; Zhou, Yifan; Chen, Ruwen

      2017-12-01

      This paper develops a product data definition (PDD) system for a semiconductor packaging and testing company with independent intellectual property rights. The new PDD system can solve the problems such as, the effective control of production plans, the timely feedback of production processes, and the efficient schedule of resources. Firstly, this paper introduces the general requirements of the PDD system and depicts the operation flow and the data flow of the PDD system. Secondly, the overall design scheme of the PDD system is put forward. After that, the physical data model is developed using the Power Designer15.0 tool, and the database system is built. Finally, the function realization and running effects of the PDD system are analysed. The successful operation of the PDD system can realize the information flow among various production departments of the enterprise to meet the standard of the enterprise manufacturing integration and improve the efficiency of production management.

    • Ultracoherent operation of spin qubits with superexchange coupling

      NASA Astrophysics Data System (ADS)

      Rančić, Marko J.; Burkard, Guido

      2017-11-01

      With the use of nuclear-spin-free materials such as silicon and germanium, spin-based quantum bits (qubits) have evolved to become among the most coherent systems for quantum information processing. The new frontier for spin qubits has therefore shifted to the ubiquitous charge noise and spin-orbit interaction, which are limiting the coherence times and gate fidelities of solid-state qubits. In this paper we investigate superexchange, as a means of indirect exchange interaction between two single electron spin qubits, each embedded in a single semiconductor quantum dot (QD), mediated by an intermediate, empty QD. Our results suggest the existence of "supersweet spots", in which the qubit operations implemented by superexchange interaction are simultaneously first-order-insensitive to charge noise and to errors due to spin-orbit interaction. The proposed spin-qubit architecture is scalable and within the manufacturing capabilities of semiconductor industry.

    • Opportunity for academic research in a low-gravity environment - Crystal growth

      NASA Technical Reports Server (NTRS)

      Matthiesen, D. H.; Wargo, M. J.; Witt, A. F.

      1986-01-01

      The history of basic and applied research on crystal growth (CG), especially of semiconductor materials, is reviewed, stressing the dominance (at least in the U.S.) of industrial R&D projects over academic programs and the need for more extensive fundamental investigations. The NASA microgravity research program and the recommendations of the University Space Research Association are examined as they affect the availability of space facilities for academic CG research. Also included is a report on ground experiments on the effectiveness of magnetic fields in controlling vertical Bridgman CG and melt stability, using the apparatus employed in the Apollo-Soyuz experiments (Witt et al., 1978); the results are presented in graphs and briefly characterized. The role of NASA's microgravity CG program in stimulating academic work on CG, the importance of convection effects, CG work on materials other than semiconductors, and NSF support of CG research are discussed in a comment by R. F. Sekerka.

    • Surface and Interface Engineering of Organometallic and Two Dimensional Semiconductor

      NASA Astrophysics Data System (ADS)

      Park, Jun Hong

      For over half a century, inorganic Si and III-V materials have led the modern semiconductor industry, expanding to logic transistor and optoelectronic applications. However, these inorganic materials have faced two different fundamental limitations, flexibility for wearable applications and scaling limitation as logic transistors. As a result, the organic and two dimensional have been studied intentionally for various fields. In the present dissertation, three different studies will be presented with followed order; (1) the chemical response of organic semiconductor in NO2 exposure. (2) The surface and stability of WSe2 in ambient air. (3) Deposition of dielectric on two dimensional materials using organometallic seeding layer. The organic molecules rely on the van der Waals interaction during growth of thin films, contrast to covalent bond inorganic semiconductors. Therefore, the morphology and electronic property at surface of organic semiconductor in micro scale is more sensitive to change in gaseous conditions. In addition, metal phthalocyanine, which is one of organic semiconductor materials, change their electronic property as reaction with gaseous analytes, suggesting as potential chemical sensing platforms. In the present part, the growth behavior of metal phthalocyanine and surface response to gaseous condition will be elucidated using scanning tunneling microscopy (STM). In second part, the surface of layered transition metal dichalcogenides and their chemical response to exposure ambient air will be investigated, using STM. Layered transition metal dichalcogenides (TMDs) have attracted widespread attention in the scientific community for electronic device applications because improved electrostatic gate control and suppression of short channel leakage resulted from their atomic thin body. To fabricate the transistor based on TMDs, TMDs should be exposed to ambient conditions, while the effect of air exposure has not been understood fully. In this part, the effect of ambient air on TMDs will be investigated and partial oxidation of TMDs. In the last part, uniform deposition of dielectric layers on 2D materials will be presented, employing organic seedling layer. Although 2D materials have been expected as next generation semiconductor platform, direct deposition of dielectric is still challenging and induces leakage current commonly, because inertness of their surface resulted from absent of dangling bond. Here, metal phthalocyanine monolayer (ML) is employed as seedling layers and the growth of atomic layer deposition (ALD) dielectric is investigated in each step using STM.

    • Consumer driven healthcare: strategic, operational, and information technology implications for today's healthcare CIO.

      PubMed

      Singh, Simmi P; Hummel, John; Walton, Gregory S

      2005-01-01

      This article explores the phenomenon of consumerism in healthcare from an evolutionary perspective and with a view to understanding its implications on the future of our industry. Drawing from the perspectives of leading industry thought leaders and CIOs, it explores the strategic drivers moving our industry toward consumerism and the operational and information technology implications of that trend. By blending real-life examples with potential scenarios, the article is designed to provoke thinking regarding the challenges and opportunities presented by consumerism, thereby informing strategic planning efforts. By doing so, the authors seek to initiate a dialog with readers on this emerging topic while sharing their insights and perspectives with those entrusted with developing consumer-driven healthcare strategies and action plans.

    • Flow of natural versus economic capital in industrial supply networks and its implications to sustainability.

      PubMed

      Ukidwe, Nandan U; Bakshi, Bhavik R

      2005-12-15

      Appreciating the reliance of industrial networks on natural capital is a necessary step toward their sustainable design and operation. However, most contemporary accounting techniques, including engineering economics, life cycle assessment, and full cost accounting, fail in this regard, as they take natural capital for granted and concentrate mainly on the economic aspects and emissions. The recently developed "thermodynamic input-output analysis" (TIOA) includes the contribution of ecological goods, ecosystem services, human resources, and impact of emissions in an economic input-output model. This paper uses TIOA to determine the throughputs of natural and economic capitals along industrial supply networks. The ratios of natural to economic capitals of economic sectors reveals a hierarchical organization of the U.S. economy wherein basic infrastructure industries are at the bottom and specialized value-added industries constitute the top. These results provide novel insight into the reliance of specific industrial sectors and supply chains on natural capital and the corresponding economic throughput. Such insight is useful for understanding the implications of corporate restructuring on industrial sustainability metrics and of outsourcing of business activities on outsourcer, outsourcee, and global sustainability. These implications are discussed from the standpoints of weak and strong sustainability paradigms. The calculated ratios can also be used for hybrid thermodynamic life cycle assessment.

    • Energy transfer dynamics from individual semiconductor nanoantennae to dye molecules with implication to light-harvesting nanosystems

      NASA Astrophysics Data System (ADS)

      Shan, Guangcun; Hu, Mingjun; Yan, Ze; Li, Xin; Huang, Wei

      2018-03-01

      Semiconductor nanocrystals can be used as nanoscale optical antennae to photoexcite individual dye molecules in an ensemble via energy transfer mechanism. The theoretical framework developed by Förster and others describes how electronic excitation migrates in the photosynthetic apparatus of plants, algae, and bacteria from light absorbing pigments to reaction centers where light energy is utilized for the eventual conversion into chemical energy. Herein we investigate the effect of the average donor-acceptor spacing on the time-resolved fluorescence intensity and dynamics of single donor-acceptor pairs with the dye acceptor concentration decreasing by using quantum Monte-Carlo simulation of FRET dynamics. Our results validated that the spatial disorder controlling the microscopic energy transfer rates accounts for the scatter in donor fluorescence lifetimes and intensities, which provides a new design guideline for artificial light-harvesting nanosystems.

    • Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

      PubMed

      Fabiano, Simone; Crispin, Xavier; Berggren, Magnus

      2014-01-08

      The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer and vice versa. This is because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semiconductor interfaces. This combination of materials allows for introducing hysteresis effects in the capacitance of an electric double layer capacitor. The latter is advantageously used to control the charge accumulation in the semiconductor channel of an organic field-effect transistor. The resulting memory transistors can be written at a gate voltage of around 7 V and read out at a drain voltage as low as 50 mV. The technological implication of this large difference between write and read-out voltages lies in the non-destructive reading of this ferroelectric memory.

  1. Spatial Distortion of Vibration Modes via Magnetic Correlation of Impurities

    NASA Astrophysics Data System (ADS)

    Krasniqi, F. S.; Zhong, Y.; Epp, S. W.; Foucar, L.; Trigo, M.; Chen, J.; Reis, D. A.; Wang, H. L.; Zhao, J. H.; Lemke, H. T.; Zhu, D.; Chollet, M.; Fritz, D. M.; Hartmann, R.; Englert, L.; Strüder, L.; Schlichting, I.; Ullrich, J.

    2018-03-01

    Long wavelength vibrational modes in the ferromagnetic semiconductor Ga0.91 Mn0.09 As are investigated using time resolved x-ray diffraction. At room temperature, we measure oscillations in the x-ray diffraction intensity corresponding to coherent vibrational modes with well-defined wavelengths. When the correlation of magnetic impurities sets in, we observe the transition of the lattice into a disordered state that does not support coherent modes at large wavelengths. Our measurements point toward a magnetically induced broadening of long wavelength vibrational modes in momentum space and their quasilocalization in the real space. More specifically, long wavelength vibrational modes cannot be assigned to a single wavelength but rather should be represented as a superposition of plane waves with different wavelengths. Our findings have strong implications for the phonon-related processes, especially carrier-phonon and phonon-phonon scattering, which govern the electrical conductivity and thermal management of semiconductor-based devices.

  2. Heterointegration of Dissimilar Materials

    DTIC Science & Technology

    2015-07-28

    computing capabilities. This has been possible due to the aggressive scaling undertaken by the Si industry for complementary metal oxide semiconductor...current due to quantum mechanical tunneling. After years of research and development, Hf- based gate dielectric with metal gates is now being used in CMOS...the oxide in this study was 1ML or ~3.9 Å/ min. The native SiO2 was removed using a low temperature process involving the deposition of Sr metal

  3. Perspectives on integrated modeling of transport processes in semiconductor crystal growth

    NASA Technical Reports Server (NTRS)

    Brown, Robert A.

    1992-01-01

    The wide range of length and time scales involved in industrial scale solidification processes is demonstrated here by considering the Czochralski process for the growth of large diameter silicon crystals that become the substrate material for modern microelectronic devices. The scales range in time from microseconds to thousands of seconds and in space from microns to meters. The physics and chemistry needed to model processes on these different length scales are reviewed.

  4. FY 2016 Research Highlights

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    This fact sheet summarizes the research highlights for the Clean Energy Manufacturing Analysis Center (CEMAC) for Fiscal Year 2106. Topics covered include additive manufacturing for the wind industry, biomass-based chemicals substitutions, carbon fiber manufacturing facility siting, geothermal power plant turbines, hydrogen refueling stations, hydropower turbines, LEDs and lighting, light-duty automotive lithium-ion cells, magnetocaloric refrigeration, silicon carbide power electronics for variable frequency motor drives, solar photovoltaics, and wide bandgap semiconductor opportunities in power electronics.

  5. Government-Imposed Barriers to the Use of Commercial Integrated Circuits in Military Systems.

    DTIC Science & Technology

    1996-02-01

    Advanced Planning Briefing for Industry (undated). The FY94/FY95 research agenda of the Microprocessor Technology Utiliza- tion Program includes... planning and re- sults. As a model of how a private institute might operate, we suggest (without implying partiality) the Semiconductor Research...or incorporate lessons learned). Those IC suppliers passing the audit are listed on the QML. Products from QML-listed suppliers can be used with

  6. Bridging the Hardware-Software Gap: A Proof Carrying Approach for Computer Systems Trust Evaluation (5.3.5)

    DTIC Science & Technology

    2017-08-22

    has significantly lowered the design cost and shortened the time-to- market (TTM) of Integrated Circuits (ICs) in the electronic industry. Over the...semiconductor companies have focused on high-profit phases such as design, marketing , and sales and have outsourced chip manufacturing, wafer fabrication...supply chain has significantly lowered the design cost and shortened the time- to- market (TTM) of integrated circuits (ICs) in the electronic

  7. The RISC-V Instruction Set Manual Volume 2: Privileged Architecture Version 1.7

    DTIC Science & Technology

    2015-05-09

    DIG07-10227). Additional support came from Par Lab affiliates Nokia, NVIDIA , Oracle, and Samsung. • Project Isis: DoE Award DE-SC0003624. • ASPIRE...STARnet center funded by the Semiconductor Research Corporation . Additional sup- port from ASPIRE industrial sponsor, Intel, and ASPIRE affiliates...Google, Huawei, Nokia, NVIDIA , Oracle, and Samsung. The content of this paper does not necessarily reflect the position or the policy of the US

  8. Prompt Charge Collection in Gallium Arsenide Diodes Struck by Energetic Heavy Ions.

    DTIC Science & Technology

    1986-09-01

    Continue on reverse if necessaty and identify by block number) Charge collection was measured as a function of reversebias voltage on GaAs Schottkyarrier...research described above was all directed at SEU in silicon, the semiconductor material from which state-of-the- art electronic switching de- vices are...of the industry dedicated to satellite electronics. There, data processing re- quirements have traditionally pushed the state of the art , both in

  9. EDITORIAL: The 24th Nordic Semiconductor Meeting The 24th Nordic Semiconductor Meeting

    NASA Astrophysics Data System (ADS)

    Páll Gunnlaugsson, Haraldur; Nylandsted Larsen, Arne; Uhrenfeldt, Christian

    2012-03-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a Topical Issue of Physica Scripta. All of the papers in this Topical Issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This 24th meeting of the Nordic Semiconductor community, NSM 2011, was held at Fuglsøcentret, close to Aarhus, Denmark, 19-22 June 2011. Support was provided by the Carlsberg Foundation, Danfysik and the semiconductor group at Aarhus University. Over 30 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The aim of the meeting was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. The 25th Nordic Semiconductor Meeting will be organized in June 2013 in Finland, chaired by Dr Filip Tuomisto, Aalto University. A Nordic Summer School on Semiconductor Science will be organized in connection with the conference (just before), chaired by Dr Jonatan Slotte, Aalto University. Information on these events can be found at physics.aalto.fi/nsm2013. List of participants Søren Vejling AndersenAalborg University, Aalborg, Denmark Pia BomholtAarhus University, Aarhus, Denmark Hafliði P GíslasonUniversity of Iceland, Reykjavik, Iceland Haraldur Páll GunnlaugssonAarhus University, Aarhus, Denmark John HansenAarhus University, Aarhus, Denmark Britta JohansenAarhus University, Aarhus, Denmark Volodymyr KhranovskyyLinköping University, Linköping, Sweden Arne Nylandsted LarsenAarhus University, Denmark Helge MalmbekkUniversity of Oslo, Oslo, Norway Erik Stensrud MarsteinInstitute for Energy Technology, Kjeller, Norway Antonio MartiUniversidad Politécnica de Madrid, Madrid, Spain Torben MølholtUniversity of Iceland, Reykjavik, Iceland Sveinn ÓlafssonUniversity of Iceland, Reykjavik, Iceland Thomas PedersenTechnical University of Denmark, Kgs. Lyngby, Denmark Thomas Garm PedersenAalborg University, Aalborg, Denmark Dirch Hjorth PetersenTechnical University of Denmark, Kgs. Lyngby, Denmark Vincent QuemenerUniversity of Oslo, Oslo, Norway Henry RadamsonKTH Royal Institute of Technology, Kista, Sweden Bahman RaeissiUniversity of Oslo, Oslo, Norway Jonatan SlotteAalto University, Aalto, Finland Xin SongUniversity of Oslo, Oslo, Norway Einar Örn SveinbjörnssonUniversity of Iceland, Reykjavik, Iceland Mikael SyväjärviLinköping University, Linköping, Sweden Chi Kwong TangUniversity of Oslo, Oslo, Norway Erik V ThomsenTechnical University of Denmark, Kgs. Lyngby, Denmark Christian UhrenfeldtAarhus University, Aarhus, Denmark Hans Ulrik UlriksenAalborg University, Aalborg, Denmark Muhammad UsmanKTH Royal Institute of Technology, Kista, Sweden Lasse VinesUniversity of Oslo, Oslo, Norway Ulrich WahlUnidade de Física e Aceleradores, Sacavém, Portugal Helge WemanNTNU, Trondheim, Norway Gerd WeyerAarhus University, Denmark

  10. Direct analysis of ultra-trace semiconductor gas by inductively coupled plasma mass spectrometry coupled with gas to particle conversion-gas exchange technique.

    PubMed

    Ohata, Masaki; Sakurai, Hiromu; Nishiguchi, Kohei; Utani, Keisuke; Günther, Detlef

    2015-09-03

    An inductively coupled plasma mass spectrometry (ICPMS) coupled with gas to particle conversion-gas exchange technique was applied to the direct analysis of ultra-trace semiconductor gas in ambient air. The ultra-trace semiconductor gases such as arsine (AsH3) and phosphine (PH3) were converted to particles by reaction with ozone (O3) and ammonia (NH3) gases within a gas to particle conversion device (GPD). The converted particles were directly introduced and measured by ICPMS through a gas exchange device (GED), which could penetrate the particles as well as exchange to Ar from either non-reacted gases such as an air or remaining gases of O3 and NH3. The particle size distribution of converted particles was measured by scanning mobility particle sizer (SMPS) and the results supported the elucidation of particle agglomeration between the particle converted from semiconductor gas and the particle of ammonium nitrate (NH4NO3) which was produced as major particle in GPD. Stable time-resolved signals from AsH3 and PH3 in air were obtained by GPD-GED-ICPMS with continuous gas introduction; however, the slightly larger fluctuation, which could be due to the ionization fluctuation of particles in ICP, was observed compared to that of metal carbonyl gas in Ar introduced directly into ICPMS. The linear regression lines were obtained and the limits of detection (LODs) of 1.5 pL L(-1) and 2.4 nL L(-1) for AsH3 and PH3, respectively, were estimated. Since these LODs revealed sufficiently lower values than the measurement concentrations required from semiconductor industry such as 0.5 nL L(-1) and 30 nL L(-1) for AsH3 and PH3, respectively, the GPD-GED-ICPMS could be useful for direct and high sensitive analysis of ultra-trace semiconductor gas in air. Copyright © 2015 Elsevier B.V. All rights reserved.

  11. Oxide semiconductor thin-film transistors: a review of recent advances.

    PubMed

    Fortunato, E; Barquinha, P; Martins, R

    2012-06-12

    Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. The 2002 to 2010 mask survey trend analysis

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Chan, David

    2011-03-01

    Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply as top critical issues. A survey was designed with input from semiconductor company mask technologists and merchant mask suppliers and support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's assessment was the ninth in the current series of annual reports. Its data were presented in detail at BACUS, and the detailed trend analysis is presented at EMLC. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. Results will be used to guide future investments in critical path issues. This year's survey is basically the same as the 2005 through 2010 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category are multiple questions that ultimately create a detailed profile of both the business and technical status of the critical mask industry.

  13. The international electronics industry.

    PubMed

    LaDou, J; Rohm, T

    1998-01-01

    High-technology microelectronics has a major presence in countries such as China, India, Indonesia, and Malaysia, now the third-largest manufacturer of semiconductor chips. The migration of European, Japanese, and American companies accommodates regional markets. Low wage rates and limited enforcement of environmental regulations in developing countries also serve as incentives for the dramatic global migration of this industry. The manufacture of microelectonics products is accompanied by a high incidence of occupational illnesses, which may reflect the widespread use of toxic materials. Metals, photoactive chemicals, solvents, acids, and toxic gases are used in a wide variety of combinations and workplace settings. The industry also presents problems of radiation exposure and various occupational stressors, including some unresolved ergonomic issues. The fast-paced changes of the technology underlying this industry, as well as the stringent security precautions, have added to the difficulty of instituting proper health and safety measures. Epidemiologic studies reveal an alarming increase in spontaneous abortions among cleanroom manufacturing workers; no definitive study has yet identified its cause. Other health issues, including occupational cancer, are yet to be studied. The microelectronics industry is a good example of an industry that is exported to many areas of the world before health and safety problems are properly addressed and resolved.

  14. Magnetic Field Applications in Semiconductor Crystal Growth and Metallurgy

    NASA Technical Reports Server (NTRS)

    Mazuruk, Konstantin; Ramachandran, Narayanan; Grugel, Richard; Curreri, Peter A. (Technical Monitor)

    2002-01-01

    The Traveling Magnetic Field (TMF) technique, recently proposed to control meridional flow in electrically conducting melts, is reviewed. In particular, the natural convection damping capability of this technique has been numerically demonstrated with the implication of significantly improving crystal quality. Advantages of the traveling magnetic field, in comparison to the more mature rotating magnetic field method, are discussed. Finally, results of experiments with mixing metallic alloys in long ampoules using TMF is presented

  15. Multiple beam mask writers: an industry solution to the write time crisis

    NASA Astrophysics Data System (ADS)

    Litt, Lloyd C.

    2010-09-01

    The semiconductor industry is under constant pressure to reduce production costs even as technology complexity increases. Lithography represents the most expensive process due to its high capital equipment costs and the implementation of low-k1 lithographic processes, which has added to the complexity of making masks through the greater use of optical proximity correction, pixelated masks, and double or triple patterning. Each of these mask technologies allows the production of semiconductors at future nodes while extending the utility of current immersion tools. Low k1 patterning complexity combined with increased data due to smaller feature sizes is driving extremely long mask write times. While a majority of the industry is willing to accept mask write times of up to 24 hours, evidence suggests that the write times for many masks at the 22 nm node and beyond will be significantly longer. It has been estimated that $50M+ in non-recurring engineering (NRE) costs will be required to develop a multiple beam mask writer system, yet the business case to recover this kind of investment is not strong. Moreover, funding such a development is a high risk for an individual supplier. The problem is compounded by a disconnect between the tool customer (the mask supplier) and the final mask customer that will bear the increased costs if a high speed writer is not available. Since no individual company will likely risk entering this market, some type of industry-wide funding model will be needed. Because SEMATECH's member companies strongly support a multiple beam technology for mask writers to reduce the write time and cost of 193 nm and EUV masks, SEMATECH plans to pursue an advanced mask writer program in 2011 and 2012. In 2010, efforts will focus on identifying a funding model to address the investment to develop such a technology.

  16. Polycrystalline silicon material availability and market pricing outlook study for 1980 to 88: January 1983 update

    NASA Technical Reports Server (NTRS)

    Costogue, E.; Pellin, R.

    1983-01-01

    Photovoltaic solar cell arrays which convert solar energy into electrical energy can become a cost effective, alternative energy source provided that an adequate supply of low priced materials and automated fabrication techniques are available. Presently, silicon is the most promising cell material for achieving the near term cost goals of the Photovoltaics Program. Electronic grade silicon is produced primarily for the semiconductor industry with the photovoltaic industry using, in most cases, the production rejects of slightly lower grade material. Therefore, the future availability of adequate supplies of low cost silicon is one of the major concerns of the Photovoltaic Program. The supply outlook for silicon with emphasis on pricing is updated and is based primarily on an industry survey conducted by a JPL consultant. This survey included interviews with polycrystalline silicon manufacturers, a large cross section of silicon users and silicon solar cell manufacturers.

  17. Thermodynamic determination of the metal/semiconductor separation of carbon nanotubes using hydrogels.

    PubMed

    Hirano, Atsushi; Tanaka, Takeshi; Kataura, Hiromichi

    2012-11-27

    The metal/semiconductor separation of single-wall carbon nanotubes (SWCNTs) using hydrogels, such as agarose gel and Sephacryl, together with sodium dodecyl sulfate is one of the most successful techniques necessary for industrial applications. Despite recent improvements in the technique, little is known about the separation mechanism. Here, we show that SWCNTs are reversibly adsorbed onto hydrogels in the presence of sodium dodecyl sulfate. The results enabled us to examine the thermodynamics of the adsorption reaction and thereby elucidate the separation mechanism. The adsorbability of SWCNTs onto the hydrogels was described by the standard Gibbs free energy for the adsorption, as well as the area of the hydrogels allowing the adsorption. We demonstrated, for the first time, that the free energy of adsorption for semiconducting SWCNTs was 0-12 kJ/mol lower than that for metallic SWCNTs in the temperature range of 290-320 K (e.g., ca. -4 kJ/mol for the agarose gel and ca. -9 kJ/mol for Sephacryl at 300 K), which permits metal/semiconductor separation. Importantly, the difference in the free energy was attributed to the difference in the enthalpy of adsorption: the enthalpy of adsorption of metallic SWCNTs was ca. 70 kJ/mol higher than that of semiconducting SWCNTs. Thus, the enthalpy of adsorption was found to be an important parameter in the metal/semiconductor separation of SWCNTs using hydrogels. In addition, the thermodynamic parameters depended on the hydrogel type and the surfactant concentration, which is most likely why under certain conditions hydrogels and surfactants produce different separations, e.g., chirality-selective or diameter-selective separation.

  18. Elemental and compound semiconductor surface chemistry: Intelligent interfacial design facilitated through novel functionalization and deposition strategies

    NASA Astrophysics Data System (ADS)

    Porter, Lon Alan, Jr.

    The fundamental understanding of silicon surface chemistry is an essential tool for silicon's continued dominance of the semiconductor industry in the years to come. By tapping into the vast library of organic functionalities, the synthesis of organic monolayers may be utilized to prepare interfaces, tailored to a myriad of applications ranging from silicon VLSI device optimization and MEMS to physiological implants and chemical sensors. Efforts in our lab to form stable organic monolayers on porous silicon through direct silicon-carbon linkages have resulted in several efficient functionalization methods. In the first chapter of this thesis a comprehensive review of these methods, and many others is presented. The following chapter and the appendix serve to demonstrate both potential applications and studies aimed at developing a fundamental understanding of the chemistry behind the organic functionalization of silicon surfaces. The remainder of this thesis attempts to demonstrate new methods of metal deposition onto both elemental and compound semiconductor surfaces. Currently, there is considerable interest in producing patterned metallic structures with reduced dimensions for use in technologies such as ULSI device fabrication, MEMS, and arrayed nanosensors, without sacrificing throughput or cost effectiveness. Research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. Continuous metallic films form spontaneously under ambient conditions, in the absence of a fluoride source or an externally applied current. In order to apply this metallization method toward the development of useful technologies, patterning utilizing photolithography, microcontact printing, and scanning probe nanolithography has been demonstrated.

  19. Development and Characterization of Novel Garnet and Gold Thin Films for Photonic and Plasmonic Applications

    NASA Astrophysics Data System (ADS)

    Dulal, Prabesh

    The massive amount of data that we produce and share today is the result of advancements made in the semiconductor and magnetic recording industries. As the number of transistors per unit area in integrated circuits continues to rise, power dissipation is reaching alarming levels. Photonics, which essentially is a marriage of semiconductor with laser technology has shown great promise in tackling the issue of power dissipation. The first part of this work focuses on optical isolators, which are essential to halt back-reflections that interfere with the laser source of the photonic systems. Novel terbium iron garnet thin-film optical isolators have been developed on semiconductor platforms and their magneto-optical properties are explored. Modesolver and finite-difference simulations are done to assess their device-feasibility and efficiency. Subsequently, a new photonic device has been developed using current semiconductor microelectronic fabrication techniques. Advancement in magnetic recording is equally vital to keep up with the demand for more data at faster speeds as the current perpendicular recording technique is fast-approaching its areal density limitations. Heat assisted magnetic recording (HAMR) is the next step in the evolution of hard drives. HAMR involves heating of magnetic media using plasmonic near field transducers (NFTs), which must be able to withstand elevated temperatures for extended times. The second part of this work presents a statistical crystallographic study of thermally induced deformation of Au NFTs. Subsequently, the most thermally stable crystallographic orientation for Au NFT has been determined that could lead to significant improvements in HAMR drive reliability.

  20. Threats to the Sustainability of the Outsourced Call Center Industry in the Philippines: Implications for Language Policy

    ERIC Educational Resources Information Center

    Friginal, Eric

    2009-01-01

    This study overviews current threats to the sustainability of the outsourced call center industry in the Philippines and discusses implications for macro and micro language policies given the use of English in this cross-cultural interactional context. This study also summarizes the present state of outsourced call centers in the Philippines, and…

  1. Work Force Adjustments in Private Industry. Their Implications for Manpower Policy. Manpower Automation Research Monograph No. 7.

    ERIC Educational Resources Information Center

    Manpower Administration (DOL), Washington, DC.

    The first part of this monograph represents the proceedings of a 1-day conference of manpower analysts on the processes by which private industry meets changing manpower requirements and the implications of these work force adjustments for manpower policy. The second part consists of the report on which the conference discussion was based. The…

  2. Award Restructuring and the Implications for TAFE with Reference to the Restructuring Being Undertaken within the Textiles and Metals Industry.

    ERIC Educational Resources Information Center

    Chataway, Graham

    A study investigated the human and physical resources implications of award restructuring in the textiles and metals industries for the Technical and Further Education (TAFE) system in Australia. (Award restructuring is based on union/employer cooperation in a process of negotiation and compromise between employers committed to increased…

  3. Current Status Of Ergonomic Standards

    NASA Astrophysics Data System (ADS)

    Lynch, Gene

    1984-05-01

    The last five years have seen the development and adoption of new kinds of standards for the display industry. This standardization activity deals with the complex human computer interface. Here the concerns involve health, safety, productivity, and operator well-being. The standards attempt to specify the "proper" use of visual display units. There is a wide range of implications for the display industry - as manufacturers of displays, as employers, and as users of visual display units. In this paper we examine the development of these standards, their impact on the display industry and implications for the future.

  4. Required reading

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    NONE

    1994-06-15

    This article describes competition in the electric utility industry. A brief history of deregulation in other industries is given, and some recommendations are made for transition to competition in electric power. Implications for financial impacts on the industry are presented.

  5. Deep UV LEDs

    NASA Astrophysics Data System (ADS)

    Han, Jung; Amano, Hiroshi; Schowalter, Leo

    2014-06-01

    Deep ultraviolet (DUV) photons interact strongly with a broad range of chemical and biological molecules; compact DUV light sources could enable a wide range of applications in chemi/bio-sensing, sterilization, agriculture, and industrial curing. The much shorter wavelength also results in useful characteristics related to optical diffraction (for lithography) and scattering (non-line-of-sight communication). The family of III-N (AlGaInN) compound semiconductors offers a tunable energy gap from infrared to DUV. While InGaN-based blue light emitters have been the primary focus for the obvious application of solid state lighting, there is a growing interest in the development of efficient UV and DUV light-emitting devices. In the past few years we have witnessed an increasing investment from both government and industry sectors to further the state of DUV light-emitting devices. The contributions in Semiconductor Science and Technology 's special issue on DUV devices provide an up-to-date snapshot covering many relevant topics in this field. Given the expected importance of bulk AlN substrate in DUV technology, we are pleased to include a review article by Hartmann et al on the growth of AlN bulk crystal by physical vapour transport. The issue of polarization field within the deep ultraviolet LEDs is examined in the article by Braut et al. Several commercial companies provide useful updates in their development of DUV emitters, including Nichia (Fujioka et al ), Nitride Semiconductors (Muramoto et al ) and Sensor Electronic Technology (Shatalov et al ). We believe these articles will provide an excellent overview of the state of technology. The growth of AlGaN heterostructures by molecular beam epitaxy, in contrast to the common organo-metallic vapour phase epitaxy, is discussed by Ivanov et al. Since hexagonal boron nitride (BN) has received much attention as both a UV and a two-dimensional electronic material, we believe it serves readers well to include the article by Jiang et al on using BN for UV devices; potentially as a p-type wide band gap semiconductor contact. Finally, an in-depth discussion of one DUV application in defense, the non-line-of-sight (NLOS) communication, is given by Drost and Sadler. Overall, we believe that this special issue of Semiconductor Science and Technology provides a useful overview of the state-of-art in the field on DUV materials and devices. In view of the rapidly growing interest in this field, the demonstrated enhanced device performance, and the wide range of applications, this special issue can be considered a very timely contribution. Finally, we would like to thank the IOP editorial staff, in particular Alice Malhador, for their support and also like to thank all contributors for their efforts to make this special issue possible.

  6. A study of dynamic SIMS analysis of low-k dielectric materials

    NASA Astrophysics Data System (ADS)

    Mowat, Ian A.; Lin, Xue-Feng; Fister, Thomas; Kendall, Marius; Chao, Gordon; Yang, Ming Hong

    2006-07-01

    Dynamic SIMS is an established tool for the characterization of dielectric layers in semiconductors, both for contaminant levels and for composition. As the silicon-based semiconductor industry moves towards the use of copper rather than aluminum, there is also a need to use lower k-dielectric materials to reduce RC delays and to reduce cross-talk between closely spaced metal lines. New dielectric materials pose serious challenges for implementation into semiconductor processes and also for the analytical scientist doing measurements on them. The move from inorganic materials such as SiO 2 to organic or carbon-rich low-k materials is a large change for the SIMS analyst. Low-k dielectric films from different sources can be very different materials with different analytical issues. A SIMS challenge for these materials is dealing with their insulating nature and their also fragility, particularly for porous films. These materials can be extremely sensitive to electron beam damage during charge neutralization, leading to difficulties in determining depth scales and introducing unknown errors to secondary ion counts and their subsequent conversion to concentrations. This paper presents details regarding an investigation of the effects of electron beam exposure on a low-k material. These effects and their potential impact on SIMS data will be investigated using FT-IR, TOF-SIMS, AFM and stylus profilometry.

  7. Photocatalytic Hybrid Semiconductor-Metal Nanoparticles; from Synergistic Properties to Emerging Applications.

    PubMed

    Waiskopf, Nir; Ben-Shahar, Yuval; Banin, Uri

    2018-04-14

    Hybrid semiconductor-metal nanoparticles (HNPs) manifest unique combined and often synergetic properties stemming from the materials combination. These structures exhibit spatial charge separation across the semiconductor-metal junction upon light absorption, enabling their use as photocatalysts. So far, the main impetus of photocatalysis research in HNPs addresses their functionality in solar fuel generation. Recently, it was discovered that HNPs are functional in efficient photocatalytic generation of reactive oxygen species (ROS). This has opened the path for their implementation in diverse biomedical and industrial applications where high spatially temporally resolved ROS formation is essential. Here, the latest studies on the synergistic characteristics of HNPs are summarized, including their optical, electrical, and chemical properties and their photocatalytic function in the field of solar fuel generation is briefly discussed. Recent studies are then focused concerning photocatalytic ROS formation with HNPs under aerobic conditions. The emergent applications of this capacity are then highlighted, including light-induced modulation of enzymatic activity, photodynamic therapy, antifouling, wound healing, and as novel photoinitiators for 3D-printing. The superb photophysical and photocatalytic properties of HNPs offer already clear advantages for their utility in scenarios requiring on-demand light-induced radical formation and the full potential of HNPs in this context is yet to be revealed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Intrinsic spin and momentum relaxation in organic single-crystalline semiconductors probed by ESR and Hall measurements

    NASA Astrophysics Data System (ADS)

    Tsurumi, Junto; Häusermann, Roger; Watanabe, Shun; Mitsui, Chikahiko; Okamoto, Toshihiro; Matsui, Hiroyuki; Takeya, Jun

    Spin and charge momentum relaxation mechanism has been argued among organic semiconductors with various methods, devices, and materials. However, little is known in organic single-crystalline semiconductors because it has been hard to obtain an ideal organic crystal with an excellent crystallinity and controllability required for accurate measurements. By using more than 1-inch sized single crystals which are fabricated via contentious edge-casting method developed by our group, we have successfully demonstrated a simultaneous determination of spin and momentum relaxation time for gate-induced charges of 3,11-didecyldinaphtho[2,3- d:2',3'- d']benzo[1,2- b:4,5- b']dithiophene, by combining electron spin resonance (ESR) and Hall effect measurements. The obtained temperature dependences of spin and momentum relaxation times are in good agreement in terms of power law with a factor of approximately -2. It is concluded that Elliott-Yafet spin relaxation mechanism can be dominant at room temperature regime (200 - 300 K). Probing characteristic time scales such as spin-lattice, spin-spin, and momentum relaxation times, demonstrated in the present work, would be a powerful tool to elucidate fundamental spin and charge transport mechanisms. We acknowledge the New Energy and Industrial Technology Developing Organization (NEDO) for financial support.

  9. Optical and spectroscopic studies on tannery wastes as a possible source of organic semiconductors

    NASA Astrophysics Data System (ADS)

    Nashy, El-Shahat H. A.; Al-Ashkar, Emad; Abdel Moez, A.

    2012-02-01

    Tanning industry produces a large quantity of solid wastes which contain hide proteins in the form of protein shavings containing chromium salts. The chromium wastes are the main concern from an environmental stand point of view, because chrome wastes posses a significant disposal problem. The present work is devoted to investigate the possibility of utilizing these wastes as a source of organic semi-conductors as an alternative method instead of the conventional ones. The chemical characterization of these wastes was determined. In addition, the Horizontal Attenuated Total Reflection (HATR) FT-IR spectroscopic analysis and optical parameters were also carried out for chromated samples. The study showed that the chromated samples had suitable absorbance and transmittance in the wavelength range (500-850 nm). Presence of chromium salt in the collagen samples increases the absorbance which improves the optical properties of the studied samples and leads to decrease the optical energy gap. The obtained optical energy gap gives an impression that the environmentally hazardous chrome shavings wastes can be utilized as a possible source of natural organic semiconductors with direct and indirect energy gap. This work opens the door to use some hazardous wastes in the manufacture of electronic devices such as IR-detectors, solar cells and also as solar cell windows.

  10. Comprehensive review on the development of high mobility in oxide thin film transistors

    NASA Astrophysics Data System (ADS)

    Choi, Jun Young; Lee, Sang Yeol

    2017-11-01

    Oxide materials are one of the most advanced key technology in the thin film transistors (TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) have leading technique for flat panel display (FPD), active matrix organic light emitting display (AMOLED) and active matrix liquid crystal display (AMLCD) due to their excellent electrical characteristics, such as field effect mobility ( μ FE ), subthreshold swing (S.S) and threshold voltage ( V th ). Covalent semiconductor like amorphous silicon (a-Si) is attributed to the anti-bonding and bonding states of Si hybridized orbitals. However, AOSs have not grain boundary and excellent performances originated from the unique characteristics of AOS which is the direct orbital overlap between s orbitals of neighboring metal cations. High mobility oxide TFTs have gained attractive attention during the last few years and today in display industries. It is progressively developed to increase the mobility either by exploring various oxide semiconductors or by adopting new TFT structures. Mobility of oxide thin film transistor has been rapidly increased from single digit to higher than 100 cm2/V·s in a decade. In this review, we discuss on the comprehensive review on the mobility of oxide TFTs in a decade and propose bandgap engineering and novel structure to enhance the electrical characteristics of oxide TFTs.

  11. A spatially resolved retarding field energy analyzer design suitable for uniformity analysis across the surface of a semiconductor wafer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sharma, S., E-mail: shailesh.sharma6@mail.dcu.ie; National Centre for Plasma Science and Technology, Dublin City University, Glasnevin, Dublin 9; Gahan, D., E-mail: david.gahan@impedans.com

    2014-04-15

    A novel retarding field energy analyzer design capable of measuring the spatial uniformity of the ion energy and ion flux across the surface of a semiconductor wafer is presented. The design consists of 13 individual, compact-sized, analyzers, all of which are multiplexed and controlled by a single acquisition unit. The analyzers were tested to have less than 2% variability from unit to unit due to tight manufacturing tolerances. The main sensor assembly consists of a 300 mm disk to mimic a semiconductor wafer and the plasma sampling orifices of each sensor are flush with disk surface. This device is placedmore » directly on top of the rf biased electrode, at the wafer location, in an industrial capacitively coupled plasma reactor without the need for any modification to the electrode structure. The ion energy distribution, average ion energy, and average ion flux were measured at the 13 locations over the surface of the powered electrode to determine the degree of spatial nonuniformity. The ion energy and ion flux are shown to vary by approximately 20% and 5%, respectively, across the surface of the electrode for the range of conditions investigated in this study.« less

  12. Whole air canister sampling coupled with preconcentration GC/MS analysis of part-per-trillion levels of trimethylsilanol in semiconductor cleanroom air.

    PubMed

    Herrington, Jason S

    2013-08-20

    The costly damage airborne trimethylsilanol (TMS) exacts on optics in the semiconductor industry has resulted in the demand for accurate and reliable methods for measuring TMS at trace levels (i.e., parts per trillion, volume per volume of air [ppt(v)] [~ng/m(3)]). In this study I developed a whole air canister-based approach for field sampling trimethylsilanol in air, as well as a preconcentration gas chromatography/mass spectrometry laboratory method for analysis. The results demonstrate clean canister blanks (0.06 ppt(v) [0.24 ng/m(3)], which is below the detection limit), excellent linearity (a calibration relative response factor relative standard deviation [RSD] of 9.8%) over a wide dynamic mass range (1-100 ppt(v)), recovery/accuracy of 93%, a low selected ion monitoring method detection limit of 0.12 ppt(v) (0.48 ng/m(3)), replicate precision of 6.8% RSD, and stability (84% recovery) out to four days of storage at room temperature. Samples collected at two silicon wafer fabrication facilities ranged from 10.0 to 9120 ppt(v) TMS and appear to be associated with the use of hexamethyldisilazane priming agent. This method will enable semiconductor cleanroom managers to monitor and control for trace levels of trimethylsilanol.

  13. UV/ozone assisted local graphene (p)/ZnO(n) heterojunctions as a nanodiode rectifier

    NASA Astrophysics Data System (ADS)

    Sahatiya, Parikshit; Badhulika, Sushmee

    2016-07-01

    Here we report the fabrication of a novel graphene/ZnO nanodiode by UV/ozone assisted oxidation of graphene and demonstrate its application as a half-wave rectifier to generate DC voltage. The method involves the use of electrospinning for one-step in situ synthesis and alignment of single Gr/ZnO nanocomposite across metal electrodes. On subsequent UV illumination, graphene oxidizes, which induces p type doping and ZnO being an n type semiconductor, thus resulting in the formation of a nanodiode. The as-fabricated device shows strong non-linear current-voltage characteristic similar to that of conventional semiconductor p-n junction diodes. Excellent rectifying behavior with a rectification ratio of ~103 was observed and the nanodiodes were found to exhibit long-term repeatability in their performance. Ideality factor and barrier height, as calculated by the thermionic emission model, were found to be 1.6 and 0.504 eV respectively. Due to the fact that diodes are the basic building blocks in the electronics and semiconductor industry, the successful fabrication of these nanodiodes based on UV assisted p type doping of graphene indicates that this approach can be used for developing highly scalable and efficient components for nanoelectronics, such as rectifiers and logic gates that find applications in numerous fields.

  14. Body of Knowledge (BOK) for Copper Wire Bonds

    NASA Technical Reports Server (NTRS)

    Rutkowski, E.; Sampson, M. J.

    2015-01-01

    Copper wire bonds have replaced gold wire bonds in the majority of commercial semiconductor devices for the latest technology nodes. Although economics has been the driving mechanism to lower semiconductor packaging costs for a savings of about 20% by replacing gold wire bonds with copper, copper also has materials property advantages over gold. When compared to gold, copper has approximately: 25% lower electrical resistivity, 30% higher thermal conductivity, 75% higher tensile strength and 45% higher modulus of elasticity. Copper wire bonds on aluminum bond pads are also more mechanically robust over time and elevated temperature due to the slower intermetallic formation rate - approximately 1/100th that of the gold to aluminum intermetallic formation rate. However, there are significant tradeoffs with copper wire bonding - copper has twice the hardness of gold which results in a narrower bonding manufacturing process window and requires that the semiconductor companies design more mechanically rigid bonding pads to prevent cratering to both the bond pad and underlying chip structure. Furthermore, copper is significantly more prone to corrosion issues. The semiconductor packaging industry has responded to this corrosion concern by creating a palladium coated copper bonding wire, which is more corrosion resistant than pure copper bonding wire. Also, the selection of the device molding compound is critical because use of environmentally friendly green compounds can result in internal CTE (Coefficient of Thermal Expansion) mismatches with the copper wire bonds that can eventually lead to device failures during thermal cycling. Despite the difficult problems associated with the changeover to copper bonding wire, there are billions of copper wire bonded devices delivered annually to customers. It is noteworthy that Texas Instruments announced in October of 2014 that they are shipping microcircuits containing copper wire bonds for safety critical automotive applications. An evaluation of copper wire bond technology for applicability to spaceflight hardware may be warranted along with concurrently compiling a comprehensive understanding of the failure mechanisms involved with copper wire bonded semiconductor devices.

  15. Materials Science and Device Physics of 2-Dimensional Semiconductors

    NASA Astrophysics Data System (ADS)

    Fang, Hui

    Materials and device innovations are the keys to future technology revolution. For MOSFET scaling in particular, semiconductors with ultra-thin thickness on insulator platform is currently of great interest, due to the potential of integrating excellent channel materials with the industrially mature Si processing. Meanwhile, ultra-thin thickness also induces strong quantum confinement which in turn affect most of the material properties of these 2-dimensional (2-D) semiconductors, providing unprecedented opportunities for emerging technologies. In this thesis, multiple novel 2-D material systems are explored. Chapter one introduces the present challenges faced by MOSFET scaling. Chapter two covers the integration of ultrathin III V membranes with Si. Free standing ultrathin III-V is studied to enable high performance III-V on Si MOSFETs with strain engineering and alloying. Chapter three studies the light absorption in 2-D membranes. Experimental results and theoretical analysis reveal that light absorption in the 2-D quantum membranes is quantized into a fundamental physical constant, where we call it the quantum unit of light absorption, irrelevant of most of the material dependent parameters. Chapter four starts to focus on another 2-D system, atomic thin layered chalcogenides. Single and few layered chalcogenides are first explored as channel materials, with focuses in engineering the contacts for high performance MOSFETs. Contact treatment by molecular doping methods reveals that many layered chalcogenides other than MoS2 exhibit good transport properties at single layer limit. Finally, Chapter five investigated 2-D van der Waals heterostructures built from different single layer chalcogenides. The investigation in a WSe2/MoS2 hetero-bilayer shows a large Stokes like shift between photoluminescence peak and lowest absorption peak, as well as strong photoluminescence intensity, consistent with spatially indirect transition in a type II band alignment in this van der Waals heterostructure. This result enables new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers and highlights the ability to build van der Waals semiconductor heterostructure lasers/LEDs.

  16. Mask industry assessment trend analysis

    NASA Astrophysics Data System (ADS)

    Hughes, Greg; Yun, Henry

    2009-01-01

    Microelectronics industry leaders routinely name the cost and cycle time of mask technology and mask supply as top critical issues. A survey was created with support from SEMATECH to gather information about the mask industry as an objective assessment of its overall condition. This year's survey data were presented in detail at BACUS and the detailed trend analysis presented at EMLC. The survey is designed with the input of semiconductor company mask technologists and merchant mask suppliers. This year's assessment is the seventh in the current series of annual reports. With continued industry support, the report can be used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. The report will continue to serve as a valuable reference to identify the strengths and opportunities of the mask industry. The results will be used to guide future investments on critical path issues. This year's survey is basically the same as the surveys in 2005 through 2007. Questions are grouped into seven categories: General Business Profile Information, Data Processing, Yields and Yield Loss, Mechanisms, Delivery Times, Returns, and Services. (Examples are given below). Within each category is a multitude of questions that creates a detailed profile of both the business and technical status of the critical mask industry.

  17. Mask industry assessment trend analysis: 2012

    NASA Astrophysics Data System (ADS)

    Chan, Y. David

    2012-02-01

    Microelectronics industry leaders consistently cite the cost and cycle time of mask technology and mask supply among the top critical issues for lithography. A survey was designed by SEMATECH with input from semiconductor company mask technologists and merchant mask suppliers to objectively assess the overall conditions of the mask industry. With the continued support of the industry, this year's assessment was the tenth in the current series of annual reports. This year's survey is basically the same as the 2005 through 2011 surveys. Questions are grouped into six categories: General Business Profile Information, Data Processing, Yields and Yield Loss Mechanisms, Delivery Times, Returns, and Services. Within each category is a multitude of questions that ultimately produce a detailed profile of both the business and technical status of the critical mask industry. We received data from 11 companies this year, which was a record high since the beginning of the series. The responding companies represented more than 96% of the volume shipped and about 90% of the 2011 revenue for the photomask industry. These survey reports are often used as a baseline to gain perspective on the technical and business status of the mask and microelectronics industries. They will continue to serve as a valuable reference to identify strengths and opportunities. Results can also be used to guide future investments in critical path issues.

  18. Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu

    Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method andmore » the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.« less

  19. Ultrafast direct electron transfer at organic semiconductor and metal interfaces.

    PubMed

    Xiang, Bo; Li, Yingmin; Pham, C Huy; Paesani, Francesco; Xiong, Wei

    2017-11-01

    The ability to control direct electron transfer can facilitate the development of new molecular electronics, light-harvesting materials, and photocatalysis. However, control of direct electron transfer has been rarely reported, and the molecular conformation-electron dynamics relationships remain unclear. We describe direct electron transfer at buried interfaces between an organic polymer semiconductor film and a gold substrate by observing the first dynamical electric field-induced vibrational sum frequency generation (VSFG). In transient electric field-induced VSFG measurements on this system, we observe dynamical responses (<150 fs) that depend on photon energy and polarization, demonstrating that electrons are directly transferred from the Fermi level of gold to the lowest unoccupied molecular orbital of organic semiconductor. Transient spectra further reveal that, although the interfaces are prepared without deliberate alignment control, a subensemble of surface molecules can adopt conformations for direct electron transfer. Density functional theory calculations support the experimental results and ascribe the observed electron transfer to a flat-lying polymer configuration in which electronic orbitals are found to be delocalized across the interface. The present observation of direct electron transfer at complex interfaces and the insights gained into the relationship between molecular conformations and electron dynamics will have implications for implementing novel direct electron transfer in energy materials.

  20. Integration of a nonmetallic electrostatic precipitator and a wet scrubber for improved removal of particles and corrosive gas cleaning in semiconductor manufacturing industries.

    PubMed

    Kim, Hak-Joon; Han, Bangwoo; Kim, Yong-Jin; Yoa, Seok-Jun; Oda, Tetsuji

    2012-08-01

    To remove particles in corrosive gases generated by semiconductor industries, we have developed a novel non-metallic, two-stage electrostatic precipitator (ESP). Carbon brush electrodes and grounded carbon fiber-reinforced polymer (CFRP) form the ionization stage, and polyvinyl chloride collection plates are used in the collection stage of the ESP The collection performance of the ESP downstream of a wet scrubber was evaluated with KC1, silica, and mist particles (0.01-10 pm), changing design and operation parameters such as the ESP length, voltage, and flow rate. A long-term and regeneration performance (12-hr) test was conducted at the maximum operation conditions of the scrubber and ESP and the performance was then demonstrated for 1 month with exhaust gases from wet scrubbers at the rooftop of a semiconductor manufacturing plant in Korea. The results showed that the electrical and collection performance of the ESP (16 channels, 400x400 mm2) was maintained with different grounded plate materials (stainless steel and CFRP) and different lengths of the ionization stage. The collection efficiency of the ESP at high air velocity was enhanced with increases in applied voltages and collection plate lengths. The ESP (16 channels with 100 mm length, 400x400 mm2x540 mm with a 10-mm gap) removed more than 90% of silica and mistparticles with 10 and 12 kV applied to the ESPat the air velocity of 2 m/s and liquid-to-gas ratio of 3.6 L/m3. Decreased performance after 13 hours ofcontinuous operation was recovered to the initial performance level by 5 min of water washing. Moreover during the 1-month operation at the demonstration site, the ESP showed average collection efficiencies of 97% based on particle number and 92% based on total particle mass, which were achieved with a much smaller specific corona power of 0.28 W/m3/hr compared with conventional ESPs.

  1. Microelectromechanical System (MEMS) Device Being Developed for Active Cooling and Temperature Control

    NASA Technical Reports Server (NTRS)

    Beach, Duane E.

    2003-01-01

    High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) using a Stirling thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface is being developed at the NASA Glenn Research Center to meet this need. The device can be used strictly in the cooling mode or can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly employ techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces, limited failure modes, and minimal induced vibration. The MEMS cooler has potential applications across a broad range of industries such as the biomedical, computer, automotive, and aerospace industries. The basic capabilities it provides can be categorized into four key areas: 1) Extended environmental temperature range in harsh environments; 2) Lower operating temperatures for electronics and other components; 3) Precision spatial and temporal thermal control for temperature-sensitive devices; and 4) The enabling of microsystem devices that require active cooling and/or temperature control. The rapidly expanding capabilities of semiconductor processing in general, and microsystems packaging in particular, present a new opportunity to extend Stirling-cycle cooling to the MEMS domain. The comparatively high capacity and efficiency possible with a MEMS Stirling cooler provides a level of active cooling that is impossible at the microscale with current state-of-the-art techniques. The MEMS cooler technology builds on decades of research at Glenn on Stirling-cycle machines, and capitalizes on Glenn s emerging microsystems capabilities.

  2. Nanocrystalline semiconductor doped rare earth oxide for the photocatalytic degradation studies on Acid Blue 113: A di-azo compound under UV slurry photoreactor.

    PubMed

    Suganya Josephine, G A; Mary Nisha, U; Meenakshi, G; Sivasamy, A

    2015-11-01

    Preventive measures for the control of environmental pollution and its remediation has received much interest in recent years due to the world-wide increase in the contamination of water bodies. Contributions of these harmful effluents are caused by the leather processing, pharmaceutical, cosmetic, textile, agricultural and other chemical industries. Nowadays, advanced oxidation processes considered to be better option for the complete destruction of organic contaminants in water and wastewater. Acid Blue 113 is a most widely used di-azo compound in leather, textile, dying and food industry as a color rending compound. In the present study, we have reported the photo catalytic degradation of Acid Blue 113 using a nanocrystalline semiconductor doped rare earth oxide as a photo catalyst under UV light irradiation. The photocatalyst was prepared by a simple precipitation technique and were characterized by XRD, FT-IR, UV-DRS and FE-SEM analysis. The experimental results proved that the prepared photo catalyst was nanocrystalline and highly active in the UV region. The UV-DRS results showed the band gap energy was 3.15eV for the prepared photo catalyst. The photodegradation efficiency was analyzed by various experimental parameters such as pH, catalyst dosage, variation of substrate concentration and effect of electrolyte addition. The photo degradation process followed a pseudo first order kinetics and was continuously monitored by UV-visible spectrophotometer. The experimental results proved the efficacy of the nanocrystalline zinc oxide doped dysprosium oxide which are highly active under UV light irradiations. It is also suggested that the prepared material would find wider applications in environmental remediation technologies to remove the carcinogenic and toxic moieties present in the industrial effluents. Copyright © 2015 Elsevier Inc. All rights reserved.

  3. Toxic gases used in the microelectronics industry.

    PubMed

    Wald, P H; Becker, C E

    1986-01-01

    Toxic gases are among the most dangerous materials used in manufacturing semiconductors and related devices. The storage, handling, and disposal of these gases pose a major hazard to workers and to communities located near high-technology companies. It must be anticipated that accidents, acts of terrorism, and natural calamities will result in exposure. Flammability, corrosiveness, and concentration must be considered, as well as the immediate danger to life and known human health effects of the gases used.

  4. Controlling Gas-Flow Mass Ratios

    NASA Technical Reports Server (NTRS)

    Morris, Brian G.

    1990-01-01

    Proposed system automatically controls proportions of gases flowing in supply lines. Conceived for control of oxidizer-to-fuel ratio in new gaseous-propellant rocket engines. Gas-flow control system measures temperatures and pressures at various points. From data, calculates control voltages for electronic pressure regulators for oxygen and hydrogen. System includes commercially available components. Applicable to control of mass ratios in such gaseous industrial processes as chemical-vapor depostion of semiconductor materials and in automotive engines operating on compressed natural gas.

  5. East Europe Report, Economic and Industrial Affairs, No. 2435

    DTIC Science & Technology

    1983-08-12

    was as shown in Table 4. Age Structure of Energy Boilers in 1978, in Percent Table 4 Category under 20 yrs. .20- 40 yrs. 40 or more Total 79.3...converted energy into electricity. In this group, over 50 percent of the boilers have been operated for 20 years or more, and 24.3 percent for more than 40 ...Lodz 38. Bydgoszcz Refrigeration Equipment Factory in Bydgoszcz 39. Scientific-Production Center for Semiconductors (all production units) 40

  6. Advanced Microelectronics Technologies for Future Small Satellite Systems

    NASA Technical Reports Server (NTRS)

    Alkalai, Leon

    1999-01-01

    Future small satellite systems for both Earth observation as well as deep-space exploration are greatly enabled by the technological advances in deep sub-micron microelectronics technologies. Whereas these technological advances are being fueled by the commercial (non-space) industries, more recently there has been an exciting new synergism evolving between the two otherwise disjointed markets. In other words, both the commercial and space industries are enabled by advances in low-power, highly integrated, miniaturized (low-volume), lightweight, and reliable real-time embedded systems. Recent announcements by commercial semiconductor manufacturers to introduce Silicon On Insulator (SOI) technology into their commercial product lines is driven by the need for high-performance low-power integrated devices. Moreover, SOI has been the technology of choice for many space semiconductor manufacturers where radiation requirements are critical. This technology has inherent radiation latch-up immunity built into the process, which makes it very attractive to space applications. In this paper, we describe the advanced microelectronics and avionics technologies under development by NASA's Deep Space Systems Technology Program (also known as X2000). These technologies are of significant benefit to both the commercial satellite as well as the deep-space and Earth orbiting science missions. Such a synergistic technology roadmap may truly enable quick turn-around, low-cost, and highly capable small satellite systems for both Earth observation as well as deep-space missions.

  7. Laser line scan underwater imaging by complementary metal-oxide-semiconductor camera

    NASA Astrophysics Data System (ADS)

    He, Zhiyi; Luo, Meixing; Song, Xiyu; Wang, Dundong; He, Ning

    2017-12-01

    This work employs the complementary metal-oxide-semiconductor (CMOS) camera to acquire images in a scanning manner for laser line scan (LLS) underwater imaging to alleviate backscatter impact of seawater. Two operating features of the CMOS camera, namely the region of interest (ROI) and rolling shutter, can be utilized to perform image scan without the difficulty of translating the receiver above the target as the traditional LLS imaging systems have. By the dynamically reconfigurable ROI of an industrial CMOS camera, we evenly divided the image into five subareas along the pixel rows and then scanned them by changing the ROI region automatically under the synchronous illumination by the fun beams of the lasers. Another scanning method was explored by the rolling shutter operation of the CMOS camera. The fun beam lasers were turned on/off to illuminate the narrow zones on the target in a good correspondence to the exposure lines during the rolling procedure of the camera's electronic shutter. The frame synchronization between the image scan and the laser beam sweep may be achieved by either the strobe lighting output pulse or the external triggering pulse of the industrial camera. Comparison between the scanning and nonscanning images shows that contrast of the underwater image can be improved by our LLS imaging techniques, with higher stability and feasibility than the mechanically controlled scanning method.

  8. Industrial X-Ray Imaging

    NASA Technical Reports Server (NTRS)

    1997-01-01

    In 1990, Lewis Research Center jointly sponsored a conference with the U.S. Air Force Wright Laboratory focused on high speed imaging. This conference, and early funding by Lewis Research Center, helped to spur work by Silicon Mountain Design, Inc. to break the performance barriers of imaging speed, resolution, and sensitivity through innovative technology. Later, under a Small Business Innovation Research contract with the Jet Propulsion Laboratory, the company designed a real-time image enhancing camera that yields superb, high quality images in 1/30th of a second while limiting distortion. The result is a rapidly available, enhanced image showing significantly greater detail compared to image processing executed on digital computers. Current applications include radiographic and pathology-based medicine, industrial imaging, x-ray inspection devices, and automated semiconductor inspection equipment.

  9. The ATHENA telescope and optics status

    NASA Astrophysics Data System (ADS)

    Bavdaz, Marcos; Wille, Eric; Ayre, Mark; Ferreira, Ivo; Shortt, Brian; Fransen, Sebastiaan; Collon, Maximilien; Vacanti, Giuseppe; Barriere, Nicolas; Landgraf, Boris; Haneveld, Jeroen; van Baren, Coen; Zuknik, Karl-Heintz; Della Monica Ferreira, Desiree; Massahi, Sonny; Christensen, Finn; Krumrey, Michael; Burwitz, Vadim; Pareschi, Giovanni; Spiga, Daniele; Valsecchi, Giuseppe; Vernani, Dervis; Oliver, Paul; Seidel, André

    2017-08-01

    The work on the definition and technological preparation of the ATHENA (Advanced Telescope for High ENergy Astrophysics) mission continues to progress. In parallel to the study of the accommodation of the telescope, many aspects of the X-ray optics are being evolved further. The optics technology chosen for ATHENA is the Silicon Pore Optics (SPO), which hinges on technology spin-in from the semiconductor industry, and uses a modular approach to produce large effective area lightweight telescope optics with a good angular resolution. Both system studies and the technology developments are guided by ESA and implemented in industry, with participation of institutional partners. In this paper an overview of the current status of the telescope optics accommodation and technology development activities is provided.

  10. Architectures for Improved Organic Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

  11. Semiconductor Nonlinear Dynamics Study by Broadband Terahertz Spectroscopy

    NASA Astrophysics Data System (ADS)

    Ho, I.-Chen

    Semiconductor nonlinearity in the terahertz (THz) frequency range has been attracting considerable attention due to the recent development of high-power semiconductor-based nanodevices. However, the underlying physics concerning carrier dynamics in the presence of high-field THz transients is still obscure. This thesis introduces an ultrafast, time-resolved THz pump/THz probe approach to the study of semiconductor properties in the nonlinear regime. The carrier dynamics regarding two mechanisms, intervalley scattering and impact ionization, is observed for doped InAs on a sub-picosecond time scale. In addition, polaron modulation driven by intense THz pulses is experimentally and theoretically investigated. The observed polaron dynamics verifies the interaction between energetic electrons and a phonon field. In contrast to previous work which reports optical phonon responses, acoustic phonon modulations are addressed in this study. A further understanding of the intense field interacting with solid materials will accelerate the development of semiconductor devices. This thesis starts with the design and performance of a table-top THz spectrometer which has the advantages of ultra-broad bandwidth (one order higher bandwidth compared to a conventional ZnTe sensor) and high electric field strength (>100 kV/cm). Unlike the conventional THz time-domain spectroscopy, the spectrometer integrates a novel THz air-biased-coherent-detection (THz-ABCD) technique and utilizes selected gases as THz emitters and sensors. In comparison with commonly used electro-optic (EO) crystals or photoconductive (PC) dipole antennas, the gases have the benefits of no phonon absorption as existing in EO crystals and no carrier life time limitation as observed in PC dipole antennas. The newly development THz-ABCD spectrometer with a strong THz field strength capability provides a platform for various research topics especially on the nonlinear carrier dynamics of semiconductors. Two mechanisms, electron intervalley scattering and impact ionization of InAs crystals, are observed under the excitation of intense THz field on a sub-picosecond time scale. These two competing mechanisms are demonstrated by changing the impurity doping type of the semiconductors and varying the strength of the THz field. Another investigation of nonlinear carrier dynamics is the observation of coherent polaron oscillation in n-doped semiconductors excited by intense THz pulses. Through modulations of surface reflection with a THz pump/THz probe technique, this work experimentally verifies the interaction between energetic electrons and a phonon field, which has been theoretically predicted by previous publications, and shows that this interaction applies for the acoustic phonon modes. Usually, two transverse acoustic (2TA) phonon responses are inactive in infrared measurement, while they are detectable in second-order Raman spectroscopy. The study of polaron dynamics, with nonlinear THz spectroscopy (in the far-infrared range), provides a unique method to diagnose the overtones of 2TA phonon responses of semiconductors, and therefore incorporates the abilities of both infrared and Raman spectroscopy. This work presents a new milestone in wave-matter interaction and seeks to benefit the industrial applications in high power, small scale devices.

  12. Skills Planning for Industry Growth: A Case Study of the Katherine Arts Industry. Occasional Paper

    ERIC Educational Resources Information Center

    Curry, Catherine

    2009-01-01

    The findings of a cultural industries skills audit undertaken in 2008 in Katherine, Northern Territory, are explored. The case study focusses in particular on the practical challenges and implications of auditing skills in a diverse industry sector and considers the usefulness of such an audit in preparing an industry for predicted change. This…

  13. The Changing Nature and Definitions of Industrial Design and Implications for Prospective Undergraduate Students

    ERIC Educational Resources Information Center

    Goatman, Mike; Moody, Louise

    2014-01-01

    There are currently a wide range of Higher Education Industrial Design courses available in the UK. In the present era, a wider breadth of narrative has developed within the subject, and as a result the content of industrial design educational offerings varies considerably. The paper assesses the industry view of Industrial Design as a discipline…

  14. Livestock welfare product claims: the emerging social context.

    PubMed

    Thompson, P; Harris, C; Holt, D; Pajor, E A

    2007-09-01

    An increasing number of product claims about food animal welfare or well-being have appeared in the global food industry and global market in recent years. These claims have significant consequences for producers, processors, transporters, retailers, consumers, and the animals themselves. Furthermore, recent restructuring of the global food industry has altered the power relationships of various actors. Regulation of the industry is moving toward greater private control, and the power of retailers has dramatically increased. The changing structure of the industry carries implications both in terms of how standards are created and in terms of the types of standards themselves. The purpose of this article is to provide a greater understanding of how these product claims are made, their implications, and the challenges they present.

  15. The Implications of the National Minimum Wage for Training Practices and Skill Utilisation in the United Kingdom Hospitality Industry

    ERIC Educational Resources Information Center

    Norris, Gill; Williams, Steve; Adam-Smith, Derek

    2003-01-01

    Two key issues thrown up by the 1999 introduction of the National Minimum Wage (NMW) in the United Kingdom are its likely impact on employers' training practices in low paying sectors of the economy and the implications for skills. Based on a study of the hospitality industry, this article assesses the limited significance of the differential,…

  16. In situ control of industrial processes using laser light scattering and optical rotation

    NASA Astrophysics Data System (ADS)

    Mendoza Sanchez, Patricia Judith; López Echevarria, Daniel; Huerta Ruelas, Jorge Adalberto

    2006-02-01

    We present results of optical measurements in products or processes usually found in industrial processes, which can be used to control them. Laser light scattering was employed during semiconductor epitaxial growth by molecular beam epitaxy. With this technique, it was possible to determine growth rate, roughness and critical temperatures related to substrate degradation. With the same scattering technique, oil degradation as function of temperature was monitored for different automotive lubricants. Clear differences can be studied between monograde and multigrade oils. Optical rotation measurements as function of temperature were performed in apple juice in a pasteurization process like. Average variations related to optical rotation dependence of sugars were measured and monitored during heating and cooling process, finding a reversible behavior. As opposite behavior, sugar-protein solution was measured in a similar heating and cooling process. Final result showed a non-reversible behavior related to protein denaturation. Potential applications are discussed for metal-mechanic, electronic, food, and pharmaceutical industry. Future improvements in optical systems to make them more portable and easily implemented under typical industry conditions are mentioned.

  17. Paul W. Kruse (1927-2012), In Memoriam

    NASA Astrophysics Data System (ADS)

    Reine, Marion B.; Norton, Paul R.; Stelzer, Ernie L.

    2013-06-01

    During his distinguished 37-year career as a research physicist at the Honeywell Research Center in Minneapolis, Minnesota, Dr. Paul W. Kruse (1927-2012) played leadership roles in two disruptive infrared detector technologies, the narrow-gap semiconductor alloy HgCdTe and the silicon CMOS-based microbolometer array, both of which revolutionized the worldwide infrared detector industry. He served on numerous government advisory boards and panels, including the Army Scientific Advisory Panel and the Army Science Board, for which he received the Outstanding Civilian Service Medal. After retiring for Honeywell in 1993, he remained active in the infrared detector field in several roles: as a successful small-business entrepreneur, as an author of two books, and as a SPIE lecturer. His books, papers and lectures have educated new generations of workers in the infrared detector industry. His career, a model for industrial research physicists, has had major and permanent impacts on the worldwide infrared detector industry. This paper is a summary of the career of Paul W. Kruse, as well as a tribute to that career and its lasting legacy.

  18. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Costogue, E.; Ferber, R.; Hasbach, W.

    Photovoltaic solar cell arrays converting solar energy into electrical energy can become a cost-effective, alternative energy source provided that an adequate supply of low-priced solar cell materials and automated fabrication techniques are available. Presently, the photovoltaic industry is dependent upon polycrystalline silicon which is produced primarily for the discrete semiconductor device industry. This dependency is expected to continue until DOE-sponsored new technology developments mature. Recent industry forecasts have predicted a limited supply of polycrystalline silicon material and a shortage could occur in the early 80's. The Jet Propulsion Laboratory's Technology Development and Application Lead Center formed an ad hoc committeemore » at JPL, SERI and consultant personnel to conduct interviews with key polycrystalline manufacturers and a large cross-section of single crystal ingot growers and wafer manufacturers. Industry consensus and conclusions reached from the analysis of the data obtained by the committee are reported. The highlight of the study is that there is a high probability of polycrystalline silicon shortage by the end of CY 1982 and a strong seller's market after CY 1981 which will foster price competition for available silicon.« less

  19. Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry.

    PubMed

    Choi, Kwang-Min; Kim, Jin-Ho; Park, Ju-Hyun; Kim, Kwan-Sick; Bae, Gwi-Nam

    2015-01-01

    This study aims to elucidate the exposure properties of nanoparticles (NPs; <100 nm in diameter) in semiconductor manufacturing processes. The measurements of airborne NPs were mainly performed around process equipment during fabrication processes and during maintenance. The number concentrations of NPs were measured using a water-based condensation particle counter having a size range of 10-3,000 nm. The chemical composition, size, and shape of NPs were determined by scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy. The resulting concentrations of NPs ranged from 0.00-11.47 particles/cm(3). The concentration of NPs measured during maintenance showed a tendency to increase, albeit incrementally, compared to that measured during normal conditions (under typical process conditions without maintenance). However, the increment was small. When comparing the mean number concentration and standard deviation (n ± σ) of NPs, the chemical mechanical polishing (CMP) process was the highest (3.45 ± 3.65 particles/cm(3)), and the dry etch (ETCH) process was the lowest (0.11 ± 0.22 particles/cm(3)). The major NPs observed were silica (SiO2) and titania (TiO2) particles, which were mainly spherical agglomerates ranging in size from 25-280 nm. Sampling of semiconductor processes in CMP, chemical vapor deposition, and ETCH reveled NPs were <100 nm in those areas. On the other hand, particle size exceeded 100 nm in diffusion, metallization, ion implantation, and wet cleaning/etching process. The results show that the SiO2 and TiO2 are the major NPs present in semiconductor cleanroom environments.

  20. Decreased white blood cell counts in semiconductor manufacturing workers in Taiwan

    PubMed Central

    Luo, J; Hsieh, L; Chang, M; Hsu, K

    2002-01-01

    Objectives: To assess the systematic health effects on the liver, kidney, and haematological function tests of workers in semiconductors in Taiwan. Methods: 926 workers of a semiconductor plant in Taiwan in July 1995 were investigated. Complete blood tests including liver, kidney, and haematological functions were available from 227 workers. Results: There was a significantly lower mean (SD) white blood cell (WBC) count in male workers of photolithography (5870 (1190)/mm3, p=0.003) and implantation (6190 (1150)/mm3, p=0.018) than that of male control workers (7350 (1660)/mm3). There was a significantly higher prevalence of leukopenia in male photolithography workers (6 of 20; 30%) than in male control workers (1 of 18; 5.6%), the crude odds ratio (OR) was 7.3 (95% confidence interval (95% CI) 1 to 55.6), and the multivariate adjusted OR was 8.1 (95% CI 0.83 to 78.3). The tests for serum glutamic oxaloacetic transaminase (SGOT), serum glutamic pyruvic transaminase (SGPT), γ glutamyl transferase (RGT), and creatinine were not significant among male workers. Female workers in photolithography had abnormal SGPT and RGT of borderline significance, the multivariate adjusted ORs were 9.6 (95% CI 0.86 to 107) and 6.35 (95% CI 0.53 to 75.8), respectively. Conclusions: This study suggests that leukopenia is a potential health effect in male fabrication workers of the semiconductor industry. The tasks of the process, maintenance, and equipment engineers which consisted mostly of men put them at risk for intermittent short term peak exposure to glycol ethers, ionising radiation, arsenic, or other toxins. The findings of this medical surveillance are significant; however, a further investigation of the aetiological factors and the subsequent health effects is necessary. PMID:11836468

  1. Lasers '92; Proceedings of the International Conference on Lasers and Applications, 15th, Houston, TX, Dec. 7-10, 1992

    NASA Technical Reports Server (NTRS)

    Wang, Charles P. (Editor)

    1993-01-01

    Papers from the conference are presented, and the topics covered include the following: x-ray lasers, excimer lasers, chemical lasers, high power lasers, blue-green lasers, dye lasers, solid state lasers, semiconductor lasers, gas and discharge lasers, carbon dioxide lasers, ultrafast phenomena, nonlinear optics, quantum optics, dynamic gratings and wave mixing, laser radar, lasers in medicine, optical filters and laser communication, optical techniques and instruments, laser material interaction, and industrial and manufacturing applications.

  2. Semiconductor nanocrystal quantum dot synthesis approaches towards large-scale industrial production for energy applications

    DOE PAGES

    Hu, Michael Z.; Zhu, Ting

    2015-12-04

    This study reviews the experimental synthesis and engineering developments that focused on various green approaches and large-scale process production routes for quantum dots. Fundamental process engineering principles were illustrated. In relation to the small-scale hot injection method, our discussions focus on the non-injection route that could be scaled up with engineering stir-tank reactors. In addition, applications that demand to utilize quantum dots as "commodity" chemicals are discussed, including solar cells and solid-state lightings.

  3. Greenhouse Gas Plantwide Applicability Limitations for the Semiconductor Industry

    EPA Pesticide Factsheets

    This document may be of assistance in applying the New Source Review (NSR) air permitting regulations including the Prevention of Significant Deterioration (PSD) requirements. This document is part of the NSR Policy and Guidance Database. Some documents in the database are a scanned or retyped version of a paper photocopy of the original. Although we have taken considerable effort to quality assure the documents, some may contain typographical errors. Contact the office that issued the document if you need a copy of the original.

  4. Strategies for Closing the ITRS Funding Gap

    DTIC Science & Technology

    2008-08-01

    The semiconductor industry needs to find creative ways to close the $1.1 – 1.5B research gap , first noted in 2003, between the funding being...2008 2. REPORT TYPE 3. DATES COVERED 00-00-2008 to 00-00-2008 4. TITLE AND SUBTITLE Strategies for Closing the ITRS Funding Gap 5a. CONTRACT...Rev. 8-98) Prescribed by ANSI Std Z39-18 STRATEGIES FOR CLOSING THE ITRS FUNDING GAP # Yaw S. Obeng, Stephen Knight, and Joaquin V. Martinez de

  5. A quick method for AlCu interconnect electromigration performance predicting and monitoring

    NASA Astrophysics Data System (ADS)

    Zhang, Wenjie; Yi, Leeward; Tao, Kai; Ma, Yue; Chang, Pingyi; Mao, Duli; Wu, Jin; Zou, S. C.

    2006-05-01

    The film properties and microstructures of (bottom)Si/SiO2/Ti(top) and (bottom)Si/SiO2/Ti/TiN/AlCu(top) stacks deposited by different processes were characterized. The resistivities of thin Ti films and the reflectivities of AlCu alloy films were found to correlate with the microstructure as well as the mean time to failure (MTTF) in the electromigration (EM) test. A quick-turn monitor for AlCu interconnect reliability in the semiconductor manufacturing industry was established.

  6. Technological Change and Employment: Some Results from BLS Research.

    ERIC Educational Resources Information Center

    Mark, Jerome A.

    1987-01-01

    Data from Bureau of Labor Statistics research projects indicate that the pace of technological advancement varies significantly from industry to industry and few employees have been laid off as a result of these changes. Implications for industry concern productivity and retraining. (CH)

  7. Alliance Building in the Information and Online Database Industry.

    ERIC Educational Resources Information Center

    Alexander, Johanna Olson

    2001-01-01

    Presents an analysis of information industry alliance formation using environmental scanning methods. Highlights include why libraries and academic institutions should be interested; a literature review; historical context; industry and market structures; commercial and academic models; trends; and implications for information providers,…

  8. Modular magazine for suitable handling of microparts in industry

    NASA Astrophysics Data System (ADS)

    Grimme, Ralf; Schmutz, Wolfgang; Schlenker, Dirk; Schuenemann, Matthias; Stock, Achim; Schaefer, Wolfgang

    1998-01-01

    Microassembly and microadjustment techniques are key technologies in the industrial production of hybrid microelectromechanical systems. One focal point in current microproduction research and engineering is the design and development of high-precision microassembly and microadjustment equipment capable of operating within the framework of flexible automated industrial production. As well as these developments, suitable microassembly tools for industrial use also need to be equipped with interfaces for the supply and delivery of microcomponents. The microassembly process necessitates the supply of microparts in a geometrically defined manner. In order to reduce processing steps and production costs, there is a demand for magazines capable of providing free accessibility to the fixed microcomponents. Commonly used at present are feeding techniques, which originate from the field of semiconductor production. However none of these techniques fully meets the requirements of industrial microassembly technology. A novel modular magazine set, developed and tested in a joint project, is presented here. The magazines are able to hold microcomponents during cleaning, inspection and assembly without nay additional handling steps. The modularity of their design allows for maximum technical flexibility. The modular magazine fits into currently practiced SEMI standards. The design and concept of the magazine enables industrial manufacturers to promote a cost-efficient and flexible precision assembly of microelectromechanical systems.

  9. Diode and method of making the same

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert

    2018-03-13

    A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

  10. Relation between sick leave and selected exposure variables among women semiconductor workers in Malaysia

    PubMed Central

    Chee, H; Rampal, K

    2003-01-01

    Aims: To determine the relation between sick leave and selected exposure variables among women semiconductor workers. Methods: This was a cross sectional survey of production workers from 18 semiconductor factories. Those selected had to be women, direct production operators up to the level of line leader, and Malaysian citizens. Sick leave and exposure to physical and chemical hazards were determined by self reporting. Three sick leave variables were used; number of sick leave days taken in the past year was the variable of interest in logistic regression models where the effects of age, marital status, work task, work schedule, work section, and duration of work in factory and work section were also explored. Results: Marital status was strongly linked to the taking of sick leave. Age, work schedule, and duration of work in the factory were significant confounders only in certain cases. After adjusting for these confounders, chemical and physical exposures, with the exception of poor ventilation and smelling chemicals, showed no significant relation to the taking of sick leave within the past year. Work section was a good predictor for taking sick leave, as wafer polishing workers faced higher odds of taking sick leave for each of the three cut off points of seven days, three days, and not at all, while parts assembly workers also faced significantly higher odds of taking sick leave. Conclusion: In Malaysia, the wafer fabrication factories only carry out a limited portion of the work processes, in particular, wafer polishing and the processes immediately prior to and following it. This study, in showing higher illness rates for workers in wafer polishing compared to semiconductor assembly, has implications for the governmental policy of encouraging the setting up of wafer fabrication plants with the full range of work processes. PMID:12660374

  11. Printed photodetectors

    NASA Astrophysics Data System (ADS)

    Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario

    2015-10-01

    Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems.

  12. High-Frequency Switching Transients and Power Loss Estimation in Electric Drive Systems that Utilize Wide-Bandgap Semiconductors

    NASA Astrophysics Data System (ADS)

    Fulani, Olatunji T.

    Development of electric drive systems for transportation and industrial applications is rapidly seeing the use of wide-bandgap (WBG) based power semiconductor devices. These devices, such as SiC MOSFETs, enable high switching frequencies and are becoming the preferred choice in inverters because of their lower switching losses and higher allowable operating temperatures. Due to the much shorter turn-on and turn-off times and correspondingly larger output voltage edge rates, traditional models and methods previously used to estimate inverter and motor power losses, based upon a triangular power loss waveform, are no longer justifiable from a physical perspective. In this thesis, more appropriate models and a power loss calculation approach are described with the goal of more accurately estimating the power losses in WBG-based electric drive systems. Sine-triangle modulation with third harmonic injection is used to control the switching of the inverter. The motor and inverter models are implemented using Simulink and computer studies are shown illustrating the application of the new approach.

  13. Study of sulfur bonding on gallium arsenide (100) surfaces using supercritical fluid extraction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cabauy, P.; Darici, Y.; Furton, K.G.

    1995-12-01

    In the last decades Gallium Arsenide (GaAs) has been considered the semiconductor that will replace silicon because of its direct band gap and high electron mobility. Problems with GaAs Fermi level pinning has halted its widespread use in the electronics industry. The formation of oxides on GaAs results in a high density of surface states that effectively pin the surface Fermi level at the midgap. Studies on sulfur passivation have eliminated oxidation and virtually unpinned the Fermi level on the GaAs surface. This has given rise to interest in sulfur-GaAs bonds. In this presentation, we will discuss the types ofmore » sulfur bonds extracted from a sulfur passivated GaAs (100) using Supercritical Fluid (CO2) Extraction (SFE). SFE can be a valuable tool in the study of chemical speciations on semiconductor surfaces. The variables evaluated to effectively study the sulfur species from the GaAs surface include passivation techniques, supercritical fluid temperatures, densities, and extraction times.« less

  14. Effect of blade-surface-roughness on the pumping performance of a turbomolecular pump

    NASA Astrophysics Data System (ADS)

    Sawada, T.; Yabuki, M.; Sugiyama, W.; Watanabe, M.

    2005-11-01

    Turbomolecular pumps (TMPs) are widely used in the semiconductor and other thin film industries. Some semiconductor processes form corrosive gases such as HCl or HF as byproducts. The elements of a TMP are sometimes coated with ceramic (SiO2) film for the purpose of preventing corrosion of the TMP. The blades coated with SiO2 have relatively rough surfaces. The effect of the surface roughness of the blades on the pumping performance has been studied experimentally and theoretically. Experimental results for TMPs with two rotor disks and one stator disk show that the TMP coated with SiO2 film gives about 11% to 13% higher maximum-compression ratio than the noncoated TMP when the blade speed ratio is 0.47. The theory based on the conic peak/dimple-surface-roughness model that has been proposed by the authors explains the change in the compression ratio with the surface roughness shown in the experiment.

  15. Semiconductor-based Multilayer Selective Solar Absorber for Unconcentrated Solar Thermal Energy Conversion

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Thomas, Nathan H.; Chen, Zhen; Fan, Shanhui

    Solar thermal energy conversion has attracted substantial renewed interest due to its applications in industrial heating, air conditioning, and electricity generation. Achieving stagnation temperatures exceeding 200 °C, pertinent to these technologies, with unconcentrated sunlight requires spectrally selective absorbers with exceptionally low emissivity in the thermal wavelength range and high visible absorptivity for the solar spectrum. In this Communication, we then report a semiconductor-based multilayer selective absorber that exploits the sharp drop in optical absorption at the bandgap energy to achieve a measured absorptance of 76% at solar wavelengths and a low emittance of approximately 5% at thermal wavelengths. In fieldmore » tests, we obtain a peak temperature of 225 °C, comparable to that achieved with state-of-the-art selective surfaces. Furthemore, with straightforward optimization to improve solar absorption, our work shows the potential for unconcentrated solar thermal systems to reach stagnation temperatures exceeding 300 °C, thereby eliminating the need for solar concentrators for mid-temperature solar applications such as supplying process heat« less

  16. Infrared spectroscopic near-field mapping of single nanotransistors.

    PubMed

    Huber, A J; Wittborn, J; Hillenbrand, R

    2010-06-11

    We demonstrate the application of scattering-type scanning near-field optical microscopy (s-SNOM) for infrared (IR) spectroscopic material recognition in state-of-the-art semiconductor devices. In particular, we employ s-SNOM for imaging of industrial CMOS transistors with a resolution better than 20 nm, which allows for the first time IR spectroscopic recognition of amorphous SiO(2) and Si(3)N(4) components in a single transistor device. The experimentally recorded near-field spectral signature of amorphous SiO(2) shows excellent agreement with model calculations based on literature dielectric values, verifying that the characteristic near-field contrasts of SiO(2) stem from a phonon-polariton resonant near-field interaction between the probing tip and the SiO(2) nanostructures. Local material recognition by s-SNOM in combination with its capabilities of contact-free and non-invasive conductivity- and strain-mapping makes IR near-field microscopy a versatile metrology technique for nanoscale material characterization and semiconductor device analysis with application potential in research and development, failure analysis and reverse engineering.

  17. Towards zero-power ICT.

    PubMed

    Gammaitoni, Luca; Chiuchiú, D; Madami, M; Carlotti, G

    2015-06-05

    Is it possible to operate a computing device with zero energy expenditure? This question, once considered just an academic dilemma, has recently become strategic for the future of information and communication technology. In fact, in the last forty years the semiconductor industry has been driven by its ability to scale down the size of the complementary metal-oxide semiconductor-field-effect transistor, the building block of present computing devices, and to increase computing capability density up to a point where the power dissipated in heat during computation has become a serious limitation. To overcome such a limitation, since 2004 the Nanoelectronics Research Initiative has launched a grand challenge to address the fundamental limits of the physics of switches. In Europe, the European Commission has recently funded a set of projects with the aim of minimizing the energy consumption of computing. In this article we briefly review state-of-the-art zero-power computing, with special attention paid to the aspects of energy dissipation at the micro- and nanoscales.

  18. Resource recovery from urban stock, the example of cadmium and tellurium from thin film module recycling.

    PubMed

    Simon, F-G; Holm, O; Berger, W

    2013-04-01

    Raw material supply is essential for all industrial activities. The use of secondary raw material gains more importance since ore grade in primary production is decreasing. Meanwhile urban stock contains considerable amounts of various elements. Photovoltaic (PV) generating systems are part of the urban stock and recycling technologies for PV thin film modules with CdTe as semiconductor are needed because cadmium could cause hazardous environmental impact and tellurium is a scarce element where future supply might be constrained. The paper describes a sequence of mechanical processing techniques for end-of-life PV thin film modules consisting of sandblasting and flotation. Separation of the semiconductor material from the glass surface was possible, however, enrichment and yield of valuables in the flotation step were non-satisfying. Nevertheless, recovery of valuable metals from urban stock is a viable method for the extension of the availability of limited natural resources. Copyright © 2013 Elsevier Ltd. All rights reserved.

  19. Power SEMICONDUCTORS—STATE of Art and Future Trends

    NASA Astrophysics Data System (ADS)

    Benda, Vitezslav

    2011-06-01

    The importance of effective energy conversion control, including power generation from renewable and environmentally clean energy sources, increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications, both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance.

  20. Maxwell+TDDFT multiscale method for light propagation in thin-film semiconductor

    NASA Astrophysics Data System (ADS)

    Uemoto, Mitsuharu; Yabana, Kazuhiro

    First-principles time-dependent density functional theory (TDDFT) has been a powerful tool to describe light-matter interactions and widely used to describe electronic excitations and linear and nonlinear optical properties of molecules and solids. We have been developing a novel multiscale modeling to describe a propagation of light pulse in a macroscopic medium combining TDDFT and Maxwell equations. In the method, the finite-difference time-domain (FDTD)-like electromagnetism (EM) calculation is carried out in a macroscopic grid. At each grid point, the time-dependent Kohn-Sham equation is solved in real time. In the presentation, we show applications of this method to the 1D/2D propagations of femtosecond laser pulses through a thin-film semiconductor. This work was supported in part by MEXT as a social and scientific priority issue (Creation of new functional devices and high-performance materials to support next-generation industries; CDMSI) to be tackled by using post-K computer.

Some links on this page may take you to non-federal websites. Their policies may differ from this site.
Top