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Sample records for semiconductor lasers based

  1. Key techniques for space-based solar pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  2. Demonstration of a home projector based on RGB semiconductor lasers.

    PubMed

    Zhang, Yunfang; Dong, Hui; Wang, Rui; Duan, Jingyuan; Shi, Ancun; Fang, Qing; Liu, Yuliang

    2012-06-01

    In this paper, we demonstrate a high-definition 3-liquid-crystal-on-silicon (3-LCOS) home cinema projection system based on RGB laser source modules. Both red and blue laser modules are composed of an array of laser diodes, and the green laser is based on an optically pumped semiconductor laser. The illumination engine is designed to realize high energy efficiency, uniform illumination, and suppression of speckle noise. The presented laser projection system producing 1362 lm D65 light has a volume of about 450×360×160  mm3.

  3. Demonstration of a home projector based on RGB semiconductor lasers.

    PubMed

    Zhang, Yunfang; Dong, Hui; Wang, Rui; Duan, Jingyuan; Shi, Ancun; Fang, Qing; Liu, Yuliang

    2012-06-01

    In this paper, we demonstrate a high-definition 3-liquid-crystal-on-silicon (3-LCOS) home cinema projection system based on RGB laser source modules. Both red and blue laser modules are composed of an array of laser diodes, and the green laser is based on an optically pumped semiconductor laser. The illumination engine is designed to realize high energy efficiency, uniform illumination, and suppression of speckle noise. The presented laser projection system producing 1362 lm D65 light has a volume of about 450×360×160  mm3. PMID:22695597

  4. Ring resonator based narrow-linewidth semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Ksendzov, Alexander (Inventor)

    2005-01-01

    The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

  5. Optimization algorithm based characterization scheme for tunable semiconductor lasers.

    PubMed

    Chen, Quanan; Liu, Gonghai; Lu, Qiaoyin; Guo, Weihua

    2016-09-01

    In this paper, an optimization algorithm based characterization scheme for tunable semiconductor lasers is proposed and demonstrated. In the process of optimization, the ratio between the power of the desired frequency and the power except of the desired frequency is used as the figure of merit, which approximately represents the side-mode suppression ratio. In practice, we use tunable optical band-pass and band-stop filters to obtain the power of the desired frequency and the power except of the desired frequency separately. With the assistance of optimization algorithms, such as the particle swarm optimization (PSO) algorithm, we can get stable operation conditions for tunable lasers at designated frequencies directly and efficiently. PMID:27607701

  6. Delay-based reservoir computing using semiconductor ring lasers

    NASA Astrophysics Data System (ADS)

    Nguimdo, Romain Modeste; Danckaert, Jan; Verschaffelt, Guy; Van der Sande, Guy

    2014-05-01

    Delay systems subject to delayed optical feedback have recently shown great potential in solving computationally hard tasks. By implementing a neuro-inspired computational scheme relying on the transient response to optical data injection, high processing speeds have been demonstrated. However, reservoir computing systems based on delay dynamics discussed in the literature are designed by coupling many different stand-alone components which lead to bulky, lack of long-term stability, non-monolithic systems. Here we numerically investigate the possibility of implementing reservoir computing schemes based on semiconductor ring lasers as they are scalable and can be easily implemented on chip. We numerically benchmark our system on a chaotic time-series prediction task.

  7. Web-based interactive educational software introducing semiconductor laser dynamics: Sound of Lasers (SOL)

    NASA Astrophysics Data System (ADS)

    Consoli, Antonio; Sanchez, Jorge R.; Horche, Paloma R.; Esquivias, Ignacio

    2014-07-01

    presented. The proposed tool is addressed to the students of optical communication courses, encouraging self consolidation of the subjects learned in lectures. The semiconductor laser model is based on the well known rate equations for the carrier density, photon density and optical phase. The direct modulation of the laser is considered with input parameters which can be selected by the user. Different options for the waveform, amplitude and frequency of the injected current are available, together with the bias point. Simulation results are plotted for carrier density and output power versus time. Instantaneous frequency variations of the laser output are numerically shifted to the audible frequency range and sent to the computer loudspeakers. This results in an intuitive description of the "chirp" phenomenon due to amplitude-phase coupling, typical of directly modulated semiconductor lasers. In this way, the student can actually listen to the time resolved spectral content of the laser output. By changing the laser parameters and/or the modulation parameters, consequent variation of the laser output can be appreciated in intuitive manner. The proposed educational tool has been previously implemented by the same authors with locally executable software. In the present manuscript, we extend our previous work to a web based platform, offering improved distribution and allowing its use to the wide audience of the web.

  8. LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Optical velocimeter based on a semiconductor laser

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya; Dubnishchev, Yu N.; Meledin, V. G.

    1988-03-01

    It is shown that optical velocimeters using diffraction beam splitters are not critically sensitive to the stability of the emission wavelength of a semiconductor laser. A functional scheme of a semiconductor laser source with systems for stabilization of the temperature and pump current is described. The technical characteristics are given of a semiconductor-laser velocimeter for the determination of the velocity and length of rolling stock.

  9. Photoacoustic Techniques for Trace Gas Sensing Based on Semiconductor Laser Sources

    PubMed Central

    Elia, Angela; Lugarà, Pietro Mario; Di Franco, Cinzia; Spagnolo, Vincenzo

    2009-01-01

    The paper provides an overview on the use of photoacoustic sensors based on semiconductor laser sources for the detection of trace gases. We review the results obtained using standard, differential and quartz enhanced photoacoustic techniques. PMID:22303143

  10. Semiconductor defect metrology using laser-based quantitative phase imaging

    NASA Astrophysics Data System (ADS)

    Zhou, Renjie; Edwards, Chris; Popescu, Gabriel; Goddard, Lynford

    2015-03-01

    A highly sensitive laser-based quantitative phase imaging tool, using an epi-illumination diffraction phase microscope, has been developed for silicon wafer defect inspection. The first system used a 532 nm solid-state laser and detected 20 nm by 100 nm by 110 nm defects in a 22 nm node patterned silicon wafer. The second system, using a 405 nm diode laser, is more sensitive and has enabled detection of 15 nm by 90 nm by 35 nm defects in a 9 nm node densely patterned silicon wafer. In addition to imaging, wafer scanning and image-post processing are also crucial for defect detection.

  11. SLM based semiconductor maskwriter

    NASA Astrophysics Data System (ADS)

    Diez, Steffen; Jehle, Achim

    2015-09-01

    The high-end semiconductor mask fabrication is dominated by e-beam technology. But still more than 50% of all semiconductor masks are produced by laser writers. The current laser writers are based on the same technology that was used 25 years ago. They are reliable and fast but not very economical. Heidelberg Instruments has developed a new economical and fast laser writer based on the latest technologies.

  12. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  13. Semiconductor laser diode

    SciTech Connect

    Amann, M.C.

    1982-09-28

    A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip shaped restriction of the current path occurs in the semiconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.

  14. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  15. Semiconductor laser-based ranging instrument for earth gravity measurements

    NASA Technical Reports Server (NTRS)

    Abshire, James B.; Millar, Pamela S.; Sun, Xiaoli

    1995-01-01

    A laser ranging instrument is being developed to measure the spatial variations in the Earth's gravity field. It will range in space to a cube corner on a passive co-orbiting sub-satellite with a velocity accuracy of 20 to 50 microns/sec by using AlGaAs lasers intensity modulated at 2 GHz.

  16. Approximate Analysis of Semiconductor Laser Arrays

    NASA Technical Reports Server (NTRS)

    Marshall, William K.; Katz, Joseph

    1987-01-01

    Simplified equation yields useful information on gains and output patterns. Theoretical method based on approximate waveguide equation enables prediction of lateral modes of gain-guided planar array of parallel semiconductor lasers. Equation for entire array solved directly using piecewise approximation of index of refraction by simple functions without customary approximation based on coupled waveguid modes of individual lasers. Improved results yield better understanding of laser-array modes and help in development of well-behaved high-power semiconductor laser arrays.

  17. Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Kolokolov, K.; Li, J.; Ning, C. Z.; Larrabee, D. C.; Tang, J.; Khodaparast, G.; Kono, J.; Sasa, S.; Inoue, M.; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

  18. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  19. Frequency tunable optoelectronic oscillator based on a directly modulated DFB semiconductor laser under optical injection.

    PubMed

    Wang, Peng; Xiong, Jintian; Zhang, Tingting; Chen, Dalei; Xiang, Peng; Zheng, Jilin; Zhang, Yunshan; Li, Ruoming; Huang, Long; Pu, Tao; Chen, Xiangfei

    2015-08-10

    A frequency tunable optoelectronic oscillator based on a directly modulated distributed-feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. Through optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency can enable the loop oscillation with a RF threshold gain of less than 20 dB. The DFB laser is a commercial semiconductor laser with a package of 10 GHz, and its packaging limitation can be overcome by optical injection. In our scheme, neither a high-speed external modulator nor an electrical bandpass filter is required, making the system simple and low-cost. Microwave signals with a frequency tuning range from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers. The phase noise of the generated 9.75 GHz microwave signal is measured to be -104.8 dBc/Hz @ 10 kHz frequency offset.

  20. Medical applications of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Mancha, Sylvia D.; Keipert, Andreas; Prairie, Michael W.

    1994-06-01

    The High Power Semiconductor Laser Technology (HPSLT) program is currently developing, in-house, a belt pack medical laser. This compact semiconductor laser device provides the field paramedic or physician a unique portable laser capability. The pack consists of a completely self-contained laser system that fits inside a belt pack. Several other medical applications being investigated by the HPSLT program include urological applications, photodynamic therapy, and ophthalmic applications.

  1. High-power semiconductor separate-confinement double heterostructure lasers

    SciTech Connect

    Tarasov, I S

    2010-10-15

    The review is devoted to high-power semiconductor lasers. Historical reference is presented, physical and technological foundations are considered, and the concept of high-power semiconductor lasers is formulated. Fundamental and technological reasons limiting the optical power of a semiconductor laser are determined. The results of investigations of cw and pulsed high-power semiconductor lasers are presented. Main attention is paid to inspection of the results of experimental studies of single high-power semiconductor lasers. The review is mainly based on the data obtained in the laboratory of semiconductor luminescence and injection emitters at the A.F. Ioffe Physicotechnical Institute. (review)

  2. Two approaches for ultrafast random bit generation based on the chaotic dynamics of a semiconductor laser.

    PubMed

    Li, Nianqiang; Kim, Byungchil; Chizhevsky, V N; Locquet, A; Bloch, M; Citrin, D S; Pan, Wei

    2014-03-24

    This paper reports the experimental investigation of two different approaches to random bit generation based on the chaotic dynamics of a semiconductor laser with optical feedback. By computing high-order finite differences of the chaotic laser intensity time series, we obtain time series with symmetric statistical distributions that are more conducive to ultrafast random bit generation. The first approach is guided by information-theoretic considerations and could potentially reach random bit generation rates as high as 160 Gb/s by extracting 4 bits per sample. The second approach is based on pragmatic considerations and could lead to rates of 2.2 Tb/s by extracting 55 bits per sample. The randomness of the bit sequences obtained from the two approaches is tested against three standard randomness tests (ENT, Diehard, and NIST tests), as well as by calculating the statistical bias and the serial correlation coefficients on longer sequences of random bits than those used in the standard tests.

  3. Semiconductor Laser Low Frequency Noise Characterization

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Logan, Ronald T.

    1996-01-01

    This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.

  4. GaN nanostructure-based light emitting diodes and semiconductor lasers.

    PubMed

    Viswanath, Annamraju Kasi

    2014-02-01

    GaN and related materials have received a lot of attention because of their applications in a number of semiconductor devices such as LEDs, laser diodes, field effect transistors, photodetectors etc. An introduction to optical phenomena in semiconductors, light emission in p-n junctions, evolution of LED technology, bandgaps of various semiconductors that are suitable for the development of LEDs are discussed first. The detailed discussion on photoluminescence of GaN nanostructures is made, since this is crucial to develop optical devices. Fabrication technology of many nanostructures of GaN such as nanowires, nanorods, nanodots, nanoparticles, nanofilms and their luminescence properties are given. Then the optical processes including ultrafast phenomena, radiative, non-radiative recombination, quantum efficiency, lifetimes of excitons in InGaN quantum well are described. The LED structures based on InGaN that give various important colors of red, blue, green, and their design considerations to optimize the output were highlighted. The recent efforts in GaN technology are updated. Finally the present challenges and future directions in this field are also pointed out.

  5. Silicon photonics WDM interconnects based on resonant ring modulators and semiconductor mode locked laser

    NASA Astrophysics Data System (ADS)

    Müller, J.; Hauck, J.; Shen, B.; Romero-García, S.; Islamova, E.; Sharif Azadeh, S.; Joshi, S.; Chimot, N.; Moscoso-Mártir, A.; Merget, F.; Lelarge, F.; Witzens, J.

    2015-03-01

    We demonstrate wavelength domain multiplexed (WDM) data transmission with a data rate of 14 Gbps based on optical carrier generation with a single-section semiconductor mode-locked laser (SS-MLL) and modulation with a Silicon Photonics (SiP) resonant ring modulator (RRM). 18 channels are sequentially measured, whereas the best recorded eye diagrams feature signal quality factors (Q-factors) above 7. While optical re-amplification was necessary to maintain the link budgets and therefore system measurements were performed with an erbium doped fiber amplifier (EDFA), preliminary characterization done with a semiconductor optical amplifier (SOA) indicates compatibility with the latter pending the integration of an additional optical filter to select a subset of carriers and prevent SOA saturation. A systematic analysis of the relative intensity noise (RIN) of isolated comb lines and of signal Q-factors indicates that the link is primarily limited by amplified spontaneous emission (ASE) from the EDFA rather than laser RIN. Measured RIN for single comb components is below -120 dBc/Hz in the range from 7 MHz to 4 GHz and drops to the shot noise level at higher frequencies.

  6. Semiconductor optical amplifier-based heterodyning detection for resolving optical terahertz beat-tone signals from passively mode-locked semiconductor lasers

    SciTech Connect

    Latkowski, Sylwester; Maldonado-Basilio, Ramon; Carney, Kevin; Parra-Cetina, Josue; Philippe, Severine; Landais, Pascal

    2010-08-23

    An all-optical heterodyne approach based on a room-temperature controlled semiconductor optical amplifier (SOA) for measuring the frequency and linewidth of the terahertz beat-tone signal from a passively mode-locked laser is proposed. Under the injection of two external cavity lasers, the SOA acts as a local oscillator at their detuning frequency and also as an optical frequency mixer whose inputs are the self-modulated spectrum of the device under test and the two laser beams. Frequency and linewidth of the intermediate frequency signal (and therefore, the beat-tone signal) are resolved by using a photodiode and an electrical spectrum analyzer.

  7. Towards the generation of random bits at terahertz rates based on a chaotic semiconductor laser

    NASA Astrophysics Data System (ADS)

    Kanter, Ido; Aviad, Yaara; Reidler, Igor; Cohen, Elad; Rosenbluh, Michael

    2010-06-01

    Random bit generators (RBGs) are important in many aspects of statistical physics and crucial in Monte-Carlo simulations, stochastic modeling and quantum cryptography. The quality of a RBG is measured by the unpredictability of the bit string it produces and the speed at which the truly random bits can be generated. Deterministic algorithms generate pseudo-random numbers at high data rates as they are only limited by electronic hardware speed, but their unpredictability is limited by the very nature of their deterministic origin. It is widely accepted that the core of any true RBG must be an intrinsically non-deterministic physical process, e.g. measuring thermal noise from a resistor. Owing to low signal levels, such systems are highly susceptible to bias, introduced by amplification, and to small nonrandom external perturbations resulting in a limited generation rate, typically less than 100M bit/s. We present a physical random bit generator, based on a chaotic semiconductor laser, having delayed optical feedback, which operates reliably at rates up to 300Gbit/s. The method uses a high derivative of the digitized chaotic laser intensity and generates the random sequence by retaining a number of the least significant bits of the high derivative value. The method is insensitive to laser operational parameters and eliminates the necessity for all external constraints such as incommensurate sampling rates and laser external cavity round trip time. The randomness of long bit strings is verified by standard statistical tests.

  8. Integrated devices including cleaved semiconductor lasers

    SciTech Connect

    Chen, C.Y.

    1987-11-17

    A process for fabricating a semiconductor device is described comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.

  9. Bidirectional chaos communication between two outer semiconductor lasers coupled mutually with a central semiconductor laser.

    PubMed

    Li, Ping; Wu, Jia-Gui; Wu, Zheng-Mao; Lin, Xiao-Dong; Deng, Dao; Liu, Yu-Ran; Xia, Guang-Qiong

    2011-11-21

    Based on a linear chain composed of a central semiconductor laser and two outer semiconductor lasers, chaos synchronization and bidirectional communication between two outer lasers have been investigated under the case that the central laser and the two outer lasers are coupled mutually, whereas there exists no coupling between the two outer lasers. The simulation results show that high-quality and stable isochronal synchronization between the two outer lasers can be achieved, while the cross-correlation coefficients between the two outer lasers and the central laser are very low under proper operation condition. Based on the high performance chaos synchronization between the two outer lasers, message bidirectional transmissions of bit rates up to 20 Gbit/s can be realized through adopting a novel decoding scheme which is different from that based on chaos pass filtering effect. Furthermore, the security of bidirectional communication is also analyzed.

  10. Synchronized 4 × 12 GHz hybrid harmonically mode-locked semiconductor laser based on AWG.

    PubMed

    Liu, S; Lu, D; Zhang, R; Zhao, L; Wang, W; Broeke, R; Ji, C

    2016-05-01

    We report a monolithically integrated synchronized four wavelength channel mode-locked semiconductor laser chip based on arrayed waveguide grating and fabricated in the InP material system. Device fabrication was completed in a multiproject wafer foundry run on the Joint European Platform for Photonic Integration of Components and Circuits. The integrated photonic chip demonstrated 5th harmonic electrical hybrid mode-locking operation with four 400 GHz spacing wavelength channels and synchronized to a 12.7 GHz RF clock, for nearly transform-limited optical pulse trains from a single output waveguide. A low timing jitter of 0.349 ps, and RF frequency locking range of ~50 MHz were also achieved. PMID:27137587

  11. Synchronized 4 × 12 GHz hybrid harmonically mode-locked semiconductor laser based on AWG.

    PubMed

    Liu, S; Lu, D; Zhang, R; Zhao, L; Wang, W; Broeke, R; Ji, C

    2016-05-01

    We report a monolithically integrated synchronized four wavelength channel mode-locked semiconductor laser chip based on arrayed waveguide grating and fabricated in the InP material system. Device fabrication was completed in a multiproject wafer foundry run on the Joint European Platform for Photonic Integration of Components and Circuits. The integrated photonic chip demonstrated 5th harmonic electrical hybrid mode-locking operation with four 400 GHz spacing wavelength channels and synchronized to a 12.7 GHz RF clock, for nearly transform-limited optical pulse trains from a single output waveguide. A low timing jitter of 0.349 ps, and RF frequency locking range of ~50 MHz were also achieved.

  12. Semiconductor Laser Tracking Frequency Distance Gauge

    NASA Technical Reports Server (NTRS)

    Phillips, James D.; Reasenberg, Robert D.

    2009-01-01

    Advanced astronomical missions with greatly enhanced resolution and physics missions of unprecedented accuracy will require a spaceworthy laser distance gauge of substantially improved performance. The Tracking Frequency Gauge (TFG) uses a single beam, locking a laser to the measurement interferometer. We have demonstrated this technique with pm (10(exp -12) m) performance. We report on the version we are now developing based on space-qualifiable, fiber-coupled distributed-feedback semiconductor lasers.

  13. Speckle noise reduction of a dual-frequency laser Doppler velocimeter based on an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    Cheng, Chih-Hao; Lee, Jia-Wei; Lin, Tze-Wei; Lin, Fan-Yi

    2012-02-01

    We develop and investigate a dual-frequency Laser Doppler Velocimeter (DF-LDV) based on an optically injected semiconductor laser. By operating the laser in a period-one oscillation (P1) state, the laser can emit light with two coherent frequency components separated by about 11.25 GHz. Through optical heterodyning, the velocity of the target can be determined from the Doppler shift of the beat signal of the dual-frequency light. While the DF-LDV has the same advantages of good directionality and high intensity as in the conventional singlefrequency LDV (SF-LDV), having an effective wavelength in the range of microwave in the beat signal greatly reduces the speckle noise caused by the random phase modulation from the rough surface of the moving target. To demonstrate the speckle noise reduction, the Doppler shifted signals from a moving target covered by the plain paper are measured both from the SF-LDV and the DF-LDV. The target is rotated to provide a transverse velocity, where the speckle noise increases as the transverse velocity increases. The bandwidth of the Doppler signal obtained from the SF-LDV is increased from 4.7 kHz to 9.4 kHz as the transverse velocity increases from 0 m/s to 5 m/s. In contrast, the bandwidth obtained from the DF-LDV maintains at 0.09 Hz with or without the rotation limited by the linewidth of the P1 state used. By phase-locking the laser with a RF current modulation, the linewidth of the P1 state can be much reduced to further improve the velocity resolution and extend the detection range.

  14. Guiding effect of quantum wells in semiconductor lasers

    SciTech Connect

    Aleshkin, V Ya; Dikareva, Natalia V; Dubinov, A A; Zvonkov, B N; Karzanova, Maria V; Kudryavtsev, K E; Nekorkin, S M; Yablonskii, A N

    2013-05-31

    The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures). (semiconductor lasers. physics and technology)

  15. Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

    NASA Technical Reports Server (NTRS)

    Liu, Ansheng; Woo, Alex C. (Technical Monitor)

    1999-01-01

    In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum

  16. Semiconductor processing with excimer lasers

    SciTech Connect

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications.

  17. Semiconductor laser self-mixing micro-vibration measuring technology based on Hilbert transform

    NASA Astrophysics Data System (ADS)

    Tao, Yufeng; Wang, Ming; Xia, Wei

    2016-06-01

    A signal-processing synthesizing Wavelet transform and Hilbert transform is employed to measurement of uniform or non-uniform vibrations in self-mixing interferometer on semiconductor laser diode with quantum well. Background noise and fringe inclination are solved by decomposing effect, fringe counting is adopted to automatic determine decomposing level, a couple of exact quadrature signals are produced by Hilbert transform to extract vibration. The tempting potential of real-time measuring micro vibration with high accuracy and wide dynamic response bandwidth using proposed method is proven by both simulation and experiment. Advantages and error sources are presented as well. Main features of proposed semiconductor laser self-mixing interferometer are constant current supply, high resolution, simplest optical path and much higher tolerance to feedback level than existing self-mixing interferometers, which is competitive for non-contact vibration measurement.

  18. Theory, Modeling, and Simulation of Semiconductor Lasers

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng; Saini, Subbash (Technical Monitor)

    1998-01-01

    Semiconductor lasers play very important roles in many areas of information technology. In this talk, I will first give an overview of semiconductor laser theory. This will be followed by a description of different models and their shortcomings in modeling and simulation. Our recent efforts in constructing a fully space and time resolved simulation model will then be described. Simulation results based on our model will be presented. Finally the effort towards a self-consistent and comprehensive simulation capability for the opto-electronics integrated circuits (OEICs) will be briefly reviewed.

  19. Mid-IR semiconductor lasers for chemical sensing

    NASA Technical Reports Server (NTRS)

    Hill, C. J.; Yang, R. Q.

    2003-01-01

    The development of mid-IR semiconductor diode lasers based on type-II interband cascade structures is presented. How these diode lasers can be developed to meet the requirements in chemical sensing applications is discussed.

  20. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  1. High-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a fiber Bragg grating external cavity

    SciTech Connect

    Cornwell, D.M. , Jr.; Thomas, H.J.

    1997-02-01

    We have developed a high-power ({gt}0.9 W cw) diffraction-limited semiconductor laser based on a tapered semiconductor optical amplifier using a fiber Bragg grating in an external cavity configuration. Frequency-selective feedback from the fiber grating is injected into the amplifier via direct butt coupling through a single mode fiber, resulting in a spectrally stable and narrow ({lt}0.3 nm) high-power laser for solid-state laser pumping, laser remote sensing, and optical communications. {copyright} {ital 1997 American Institute of Physics.}

  2. Compact stabilized semiconductor laser for frequency metrology.

    PubMed

    Liang, Wei; Ilchenko, Vladimir S; Eliyahu, Danny; Dale, Elijah; Savchenkov, Anatoliy A; Seidel, David; Matsko, Andrey B; Maleki, Lute

    2015-04-10

    We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high-quality-factor whispering-gallery-mode microresonator. The laser is characterized by residual amplitude modulation below -80  dB and frequency noise better than 300  Hz/Hz(1/2) at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to the Doppler-free saturated absorption resonance of the (87)Rb D1 line is demonstrated and relative frequency stability better than 10(-12) is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for the realization of frequency modulatable lasers at any wavelength.

  3. Atmospheric CO2 remote sensing system based on high brightness semiconductor lasers and single photon counting detection

    NASA Astrophysics Data System (ADS)

    Pérez-Serrano, Antonio; Vilera, Maria Fernanda; Esquivias, Ignacio; Faugeron, Mickael; Krakowski, Michel; van Dijk, Frédéric; Kochem, Gerd; Traub, Martin; Adamiec, Pawel; Barbero, Juan; Ai, Xiao; Rarity, John G.; Quatrevalet, Mathieu; Ehret, Gerhard

    2015-10-01

    We propose an integrated path differential absorption lidar system based on all-semiconductor laser sources and single photon counting detection for column-averaged measurements of atmospheric CO2. The Random Modulated Continuous Wave (RM-CW) approach has been selected as the best suited to semiconductor lasers. In a RM-CW lidar, a pseudo random sequence is sent to the atmosphere and the received signal reflected from the target is correlated with the original sequence in order to retrieve the path length. The transmitter design is based on two monolithic Master Oscillator Power Amplifiers (MOPAs), providing the on-line and off-line wavelengths close to the selected absorption line around 1.57 µm. Each MOPA consists of a frequency stabilized distributed feedback master oscillator, a bent modulator section, and a tapered amplifier. This design allows the emitters to deliver high power and high quality laser beams with good spectral properties. An output power above 400 mW with a SMSR higher than 45 dB and modulation capability have been demonstrated. On the side of the receiver, our theoretical and experimental results indicate that the major noise contribution comes from the ambient light and detector noise. For this reason narrow band optical filters are required in the envisioned space-borne applications. In this contribution, we present the latest progresses regarding the design, modeling and characterization of the transmitter, the receiver, the frequency stabilization unit and the complete system.

  4. EDITORIAL: Semiconductor lasers: the first fifty years Semiconductor lasers: the first fifty years

    NASA Astrophysics Data System (ADS)

    Calvez, S.; Adams, M. J.

    2012-09-01

    Anniversaries call for celebrations. Since it is now fifty years since the first semiconductor lasers were reported, it is highly appropriate to celebrate this anniversary with a Special Issue dedicated to the topic. The semiconductor laser now has a major effect on our daily lives since it has been a key enabler in the development of optical fibre communications (and hence the internet and e-mail), optical storage (CDs, DVDs, etc) and barcode scanners. In the early 1960s it was impossible for most people (with the exception of very few visionaries) to foresee any of these future developments, and the first applications identified were for military purposes (range-finders, target markers, etc). Of course, many of the subsequent laser applications were made possible by developments in semiconductor materials, in the associated growth and fabrication technology, and in the increased understanding of the underlying fundamental physics. These developments continue today, so that the subject of semiconductor lasers, although mature, is in good health and continues to grow. Hence, we can be confident that the pervasive influence of semiconductor lasers will continue to develop as optoelectronics technology makes further advances into other sectors such as healthcare, security and a whole host of applications based on the global imperatives to reduce energy consumption, minimise environmental impact and conserve resources. The papers in this Special Issue are intended to tell some of the story of the last fifty years of laser development as well as to provide evidence of the current state of semiconductor laser research. Hence, there are a number of papers where the early developments are recalled by authors who played prominent parts in the story, followed by a selection of papers from authors who are active in today's exciting research. The twenty-fifth anniversary of the semiconductor laser was celebrated by the publication of a number of papers dealing with the early

  5. Microfabrication techniques for semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Tamanuki, Takemasa; Tadokoro, T.; Morito, Ken; Koyama, Fumio; Iga, Kenichi

    1991-03-01

    Several important techniques for fabricating micro-cavity semiconductor lasers including surface emitting lasers have been developed. Reactive ion beam etch (RIBE) for GaA1As and GaInAsP is employed and its condition for vertical fine etch under low damages and removal of residual damages are made clear. Passivation by sulfur is introduced to the fabrication process. Regrowth techniques for DII structures by LPE and MOCVD has been established. Some device applications are discussed. 1. MICRO-ETCHING PROCESS Micro-cavity lasers including a vertical cavity surface emitting laser1 are attracting the research interest for optical parallel processing and parallel light wave systems. In order to realize micron-order or sub-micron laserdevices the technology of micro-fabrication must be established. In this study the total fabrication technology has been almost completed. First fine and low damage etching condition by ultrahigh vacuum background RIBE using a Cl2 gas has been made clear. We have found an isotropic etching condition for the vertical side wall formation and good mask traceability i. e. the acceleration voltage is 500 V and substrate temperature is 150 C with a 5000A thickness Si02 mask. Residual damages induced on the surface and the side wall are characterized by photo-luminescence and making stripe lasers. Figure 1 is the histogram of the nominal threshold current density for (a) oxide-defined stripe lasers (b) RIBE etched and LPE regrown BH-lasers using an LPE grown DII wafer (LPE/LPE) and (c) RIBE etched

  6. Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin

    2013-03-01

    Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

  7. High-performance optically pumped GaSb-based semiconductor disk lasers for the 2.Xμm wavelength range

    NASA Astrophysics Data System (ADS)

    Rattunde, M.; Schulz, N.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.; Hopkins, J.-M.; Burns, D.

    2008-02-01

    We report on recent advances in the performance of GaSb-based optically pumped semiconductor disk lasers (OPSDLs), emitting in the 2.0 - 2.3 μm wavelength range. Both barrier pumped OPSDL (using 980 nm laser diodes as pump source) and in-well pumped OPSDL (using 1.96 μm pump radiation) have been fabricated and characterized. Using alternative SiC or diamond intracavity heatspreader, multiple-watt CW-output powers have been achieved (e.g. >3W at 2.3 μm and >5W at 2.0 μm), with power efficiencies in the range of 18 % - 25 %. For an optimised resonator setup, the beam profile is close to the diffraction limit with M2 values around 1.2; and even for the highest power levels, M2 is in the range of 2-5.

  8. Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier.

    PubMed

    Chi, Mingjun; Jensen, Ole Bjarlin; Holm, Jesper; Pedersen, Christian; Andersen, Peter Eskil; Erbert, Götz; Sumpf, Bernd; Petersen, Paul Michael

    2005-12-26

    A high-power narrow-linewidth laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The external cavity laser system uses a new tapered amplifier with a super-large optical-cavity (SLOC) design that leads to improved performance of the external cavity diode lasers. The laser system is tunable over a 29 nm range centered at 802 nm. As high as 1.95 W output power is obtained at 803.84 nm, and an output power above 1.5 W is achieved from 793 to 812 nm at operating current of 3.0 A. The emission linewidth is below 0.004 nm and the beam quality factor M2 is below 1.3 over the 29 nm tunable range. As an example of application, the laser system is used as a pump source for the generation of 405 nm blue light by single-pass frequency doubling in a periodically poled KTiOPO4. An output power of 24 mW at 405 nm, corresponding to a conversion efficiency of 0.83%/W is attained. PMID:19503273

  9. Semiconductor disk laser-pumped subpicosecond holmium fibre laser

    SciTech Connect

    Chamorovskiy, A Yu; Marakulin, A V; Leinonen, T; Kurkov, Andrei S; Okhotnikov, Oleg G

    2012-01-31

    The first passively mode-locked holmium fibre laser has been demonstrated, with a semiconductor saturable absorber mirror (SESAM) as a mode locker. Semiconductor disk lasers have been used for the first time to pump holmium fibre lasers. We obtained 830-fs pulses at a repetition rate of 34 MHz with an average output power of 6.6 mW.

  10. SEMICONDUCTOR DEVICES: Analysis of a wavelength selectable cascaded DFB laser based on the transfer matrix method

    NASA Astrophysics Data System (ADS)

    Hongyun, Xie; Liang, Chen; Pei, Shen; Botao, Sun; Renqing, Wang; Ying, Xiao; Yunxia, You; Wanrong, Zhang

    2010-06-01

    A novel cascaded DFB laser, which consists of two serial gratings to provide selectable wavelengths, is presented and analyzed by the transfer matrix method. In this method, efficient facet reflectivity is derived from the transfer matrix built for each serial section and is then used to simulate the performance of the novel cascaded DFB laser through self-consistently solving the gain equation, the coupled wave equation and the current continuity equations. The simulations prove the feasibility of this kind of wavelength selectable laser and a corresponding designed device with two selectable wavelengths of 1.51 μm and 1.53 μm is realized by experiments on InP-based multiple quantum well structure.

  11. Semiconductor Lasers and Their Application in Optical Fiber Communication.

    ERIC Educational Resources Information Center

    Agrawal, Govind P.

    1985-01-01

    Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

  12. Semiconductor laser applications in rheumatology

    NASA Astrophysics Data System (ADS)

    Pascu, Mihail-Lucian; Suteanu, S.

    1996-01-01

    Two types of laser diode (LD) based equipment for rheumatology are introduced. The first is a portable device which contains single LD emitting at 890 nm laser pulses (time full width 100 nsec) of reprate tunable within (0.5 - 1.5) kHz; the laser beam average power is 0.7 mW at 1 kHz reprate. The second is computer controlled, contains one HeNe laser and 5 LD allowing 6 modes of patient irradiation (placebo effect evaluation included). HeNe laser works in cw at 632.8 nm; the LD works each as described for the portable equipment. HeNe and LD beams are superposed so that HeNe laser spot in the irradiation plane has a 60 mm diameter and the LD spots covers a 50 mm diameter disc centered on the HeNe laser spot. Clinical applications using the second type of equipment are reported; 1287 patients were treated between October 1991 and October 1994. Female/male ratio was 4:1 and their age distribution was between 18 and 85 years. The average number of exposures was 10 and the mean exposure time was 7 minutes. Studies were made on the treatment of rheumatoid arthritis, seronegative arthritis, degenerative joint diseases, abarticular rheumatism, osteoporosis pain and pains and edema after fractures.

  13. A hybrid semiconductor-glass waveguide laser

    NASA Astrophysics Data System (ADS)

    Fan, Youwen; Oldenbeuving, Ruud M.; Klein, Edwin J.; Lee, Chris J.; Song, Hong; Khan, Muhammed R. H.; Offerhaus, Herman L.; van der Slot, Peter J. M.; Boller, Klaus-J.

    2014-05-01

    We report on a novel type of laser in which a semiconductor optical amplifier (SOA) receives frequency-selective feedback from a glass-waveguide circuit. The laser we present here is based on InP for operation in the 1.55 μm wavelength range. The Si3N4/SiO2 glass waveguide circuit comprises two sequential high-Q ring resonators. Adiabatic tapering is used for maximizing the feedback. The laser shows single-frequency oscillation with a record-narrow spectral linewidth of 24 kHz at an output power of 5.7 mW. The hybrid laser can be tuned over a broad range of 46.8 nm (1531 nm to 1577.8 nm). Such InP-glass hybrid lasers can be of great interest in dense wavelength division multiplexing (DWDM) and as phase reference in optical beam-forming networks (OBFN). The type of laser demonstrated here is also of general importance because it may be applied over a huge wavelength range including the visible, limited only by the transparency of glass (400 nm to 2.35 μm).

  14. Dissipative Phase Solitons in Semiconductor Lasers.

    PubMed

    Gustave, F; Columbo, L; Tissoni, G; Brambilla, M; Prati, F; Kelleher, B; Tykalewicz, B; Barland, S

    2015-07-24

    We experimentally demonstrate the existence of nondispersive solitary waves associated with a 2π phase rotation in a strongly multimode ring semiconductor laser with coherent forcing. Similarly to Bloch domain walls, such structures host a chiral charge. The numerical simulations based on a set of effective Maxwell-Bloch equations support the experimental evidence that only one sign of chiral charge is stable, which strongly affects the motion of the phase solitons. Furthermore, the reduction of the model to a modified Ginzburg-Landau equation with forcing demonstrates the generality of these phenomena and exposes the impact of the lack of parity symmetry in propagative optical systems. PMID:26252686

  15. High-purity 60GHz band millimeter-wave generation based on optically injected semiconductor laser under subharmonic microwave modulation.

    PubMed

    Fan, Li; Xia, Guangqiong; Chen, Jianjun; Tang, Xi; Liang, Qing; Wu, Zhengmao

    2016-08-01

    Based on an optically injected semiconductor laser (OISL) operating at period-one (P1) nonlinear dynamical state, high-purity millimeter-wave generation at 60 GHz band is experimentally demonstrated via 1/4 and 1/9 subharmonic microwave modulation (the order of subharmonic is with respect to the frequency fc of the acquired 60 GHz band millimeter-wave but not the fundamental frequency f0 of P1 oscillation). Optical injection is firstly used to drive a semiconductor laser into P1 state. For the OISL operates at P1 state with a fundamental frequency f0 = 49.43 GHz, by introducing 1/4 subharmonic modulation with a modulation frequency of fm = 15.32 GHz, a 60 GHz band millimeter-wave with central frequency fc = 61.28 GHz ( = 4fm) is experimentally generated, whose linewidth is below 1.6 kHz and SSB phase noise at offset frequency 10 kHz is about -96 dBc/Hz. For fm is varied between 13.58 GHz and 16.49 GHz, fc can be tuned from 54.32 GHz to 65.96 GHz under matched modulation power Pm. Moreover, for the OISL operates at P1 state with f0 = 45.02 GHz, a higher order subharmonic modulation (1/9) is introduced into the OISL for obtaining high-purity 60 GHz band microwave signal. With (fm, Pm) = (7.23 GHz, 13.00 dBm), a microwave signal at 65.07 GHz ( = 9fm) with a linewidth below 1.6 kHz and a SSB phase noise less than -98 dBc/Hz is experimentally generated. Also, the central frequency fc can be tuned in a certain range through adjusting fm and selecting matched Pm.

  16. High-purity 60GHz band millimeter-wave generation based on optically injected semiconductor laser under subharmonic microwave modulation.

    PubMed

    Fan, Li; Xia, Guangqiong; Chen, Jianjun; Tang, Xi; Liang, Qing; Wu, Zhengmao

    2016-08-01

    Based on an optically injected semiconductor laser (OISL) operating at period-one (P1) nonlinear dynamical state, high-purity millimeter-wave generation at 60 GHz band is experimentally demonstrated via 1/4 and 1/9 subharmonic microwave modulation (the order of subharmonic is with respect to the frequency fc of the acquired 60 GHz band millimeter-wave but not the fundamental frequency f0 of P1 oscillation). Optical injection is firstly used to drive a semiconductor laser into P1 state. For the OISL operates at P1 state with a fundamental frequency f0 = 49.43 GHz, by introducing 1/4 subharmonic modulation with a modulation frequency of fm = 15.32 GHz, a 60 GHz band millimeter-wave with central frequency fc = 61.28 GHz ( = 4fm) is experimentally generated, whose linewidth is below 1.6 kHz and SSB phase noise at offset frequency 10 kHz is about -96 dBc/Hz. For fm is varied between 13.58 GHz and 16.49 GHz, fc can be tuned from 54.32 GHz to 65.96 GHz under matched modulation power Pm. Moreover, for the OISL operates at P1 state with f0 = 45.02 GHz, a higher order subharmonic modulation (1/9) is introduced into the OISL for obtaining high-purity 60 GHz band microwave signal. With (fm, Pm) = (7.23 GHz, 13.00 dBm), a microwave signal at 65.07 GHz ( = 9fm) with a linewidth below 1.6 kHz and a SSB phase noise less than -98 dBc/Hz is experimentally generated. Also, the central frequency fc can be tuned in a certain range through adjusting fm and selecting matched Pm. PMID:27505789

  17. High power semiconductor lasers for deep space communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1981-01-01

    The parameters of semiconductor lasers pertaining to their application as optical emitters are discussed. Several methods to overcome their basic disadvantage, which is the low level of powers they emit, are reviewed. Most of these methods are based on a coherent power combining of several lasers.

  18. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  19. Semiconductor laser with multiple lasing wavelengths

    DOEpatents

    Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

    2003-07-29

    A new class of multi-terminal vertical-cavity semiconductor laser components has been developed. These multi-terminal laser components can be switched, either electrically or optically, between distinct lasing wavelengths, or can be made to lase simultaneously at multiple wavelengths.

  20. Highly coherent modeless broadband semiconductor laser.

    PubMed

    Sellahi, M; Myara, M; Beaudoin, G; Sagnes, I; Garnache, A

    2015-09-15

    We report on the highly coherent modeless broadband continuous wave operation of a semiconductor vertical-external-cavity-surface-emitting laser. The laser design is based on a frequency-shifted-feedback scheme provided by an acousto-optic frequency shifter inserted in a linear or a ring traveling wave cavity. The gain mirror is a GaAs-based multiple quantum well structure providing large gain at 1.07 μm. This laser exhibits a coherent optical spectrum over 1.27 nm (330 GHz) bandwidth, with 70 mW output power and a high beam quality. The light polarization is linear (>30  dB extinction ratio). The laser dynamics exhibits a low intensity noise close to class A regime, with a ∼1.5  MHz cutoff frequency. The frequency noise spectral density shows a first-order low-pass like shape (130 kHz cutoff) leading to a Gaussian shape for homodyne interferometric signals. The measured beat width is ≃54  kHz and the coherence time of ∼19  μs. No nonlinear effects are observed, showing dynamics very close to theory.

  1. Highly coherent modeless broadband semiconductor laser.

    PubMed

    Sellahi, M; Myara, M; Beaudoin, G; Sagnes, I; Garnache, A

    2015-09-15

    We report on the highly coherent modeless broadband continuous wave operation of a semiconductor vertical-external-cavity-surface-emitting laser. The laser design is based on a frequency-shifted-feedback scheme provided by an acousto-optic frequency shifter inserted in a linear or a ring traveling wave cavity. The gain mirror is a GaAs-based multiple quantum well structure providing large gain at 1.07 μm. This laser exhibits a coherent optical spectrum over 1.27 nm (330 GHz) bandwidth, with 70 mW output power and a high beam quality. The light polarization is linear (>30  dB extinction ratio). The laser dynamics exhibits a low intensity noise close to class A regime, with a ∼1.5  MHz cutoff frequency. The frequency noise spectral density shows a first-order low-pass like shape (130 kHz cutoff) leading to a Gaussian shape for homodyne interferometric signals. The measured beat width is ≃54  kHz and the coherence time of ∼19  μs. No nonlinear effects are observed, showing dynamics very close to theory. PMID:26371921

  2. Stripline mount for semiconductor lasers

    SciTech Connect

    Dietrich, N.R.; Holbrook, W.R.; Johnson, A.F. Jr.; Zacharias, A.

    1988-08-02

    An arrangement for coupling a semiconductor optical device to a signal source, is described, the arrangement comprising a stripline transmission path having a predetermined characteristic impedance Z/sub 0/; and resistance means connected in series with the stripline transmission path, chosen to provide impedance matching between the stripline transmission path and an associated semiconductor optical device.

  3. Synchronization of semiconductor laser arrays with 2D Bragg structures

    NASA Astrophysics Data System (ADS)

    Baryshev, V. R.; Ginzburg, N. S.

    2016-08-01

    A model of a planar semiconductor multi-channel laser is developed. In this model two-dimensional (2D) Bragg mirror structures are used for synchronizing radiation of multiple laser channels. Coupling of longitudinal and transverse waves can be mentioned as the distinguishing feature of these structures. Synchronization of 20 laser channels is demonstrated with a semi-classical approach based on Maxwell-Bloch equations.

  4. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    SciTech Connect

    Deri, R J

    2011-01-03

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  5. Closure of incision in cataract surgery in-vivo using a temperature controlled laser soldering system based on a 1.9μm semiconductor laser

    NASA Astrophysics Data System (ADS)

    Gabay, Ilan; Basov, Svetlana; Varssano, David; Barequet, Irina; Rosner, Mordechai; Rattunde, Marcel; Wagner, Joachim; Platkov, Max; Harlev, Mickey; Rossman, Uri; Katzir, Abraham

    2016-03-01

    In phacoemulsification-based cataract surgery, a corneal incision is made and is then closed by hydration of the wound lips, or by suturing. We developed a system for sealing such an incision by soldering with a semiconductor disk laser (λ=1.9μm), under close temperature control. The goal was to obtain stronger and more watertight adhesion. The system was tested on incisions in the corneas of 15 eyes of pigs, in-vivo. Optical Coherent Tomography (OCT) and histopathologic examination showed little thermal damage and good apposition. The measured average burst pressure was 1000+/-30mmHg. In the future, this method wound may replace suturing of corneal wounds, including in traumatic corneal laceration and corneal transplantation.

  6. Injection-locked semiconductor laser-based frequency comb for modulation applications in RF analog photonics.

    PubMed

    Sarailou, Edris; Delfyett, Peter

    2016-07-01

    A linearized intensity modulator for periodic and pulsed light is proposed and demonstrated. The free carrier plasma effect has been used to modulate the refractive index of the phase section of a three-section mode-locked laser. If injection locked, the modulation induces an arcsine phase response on the three-section mode-locked laser. By introducing this mode-locked laser into a Mach-Zehnder interferometer biased at quadrature, one can realize a true linear intensity modulation. This novel laser suppresses any unwanted amplitude modulation and increases the performance of the linearized intensity modulator. Experimental results have provided a record low static Iπ of 0.39 mA and a spur-free dynamic range of 75  dB.Hz2/3. PMID:27367083

  7. Low-threshold nanowire laser based on composition-symmetric semiconductor nanowires.

    PubMed

    Guo, Pengfei; Zhuang, Xiujuan; Xu, Jinyou; Zhang, Qinglin; Hu, Wei; Zhu, Xiaoli; Wang, Xiaoxia; Wan, Qiang; He, Pengbin; Zhou, Hong; Pan, Anlian

    2013-03-13

    Low-threshold nanoscale lasers are attractive for their promising applications in highly integrated photonic devices and systems. Here we report the controllable growth of composition-symmetric CdS(x)Se(1-x) nanowires by using a multistep thermal evaporation route with moving sources. Microstructure analyses reveal the obtained wires are high-quality single crystals with the composition gradually changed from the center toward their both ends. Under laser illumination, these wires exhibit symmetrical color distribution along the length direction, with red at the center and green at the both ends. Optically pumped lasing is realized at room temperature using these composition-symmetric nanowires, with the threshold several times lower than that of composition-homogeneous wires. This new nanowire structure will have potential applications as low-threshold nanoscale lasers in integrated nanophotonics.

  8. Teradiode's high brightness semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Huang, Robin K.; Chann, Bien; Burgess, James; Lochman, Bryan; Zhou, Wang; Cruz, Mike; Cook, Rob; Dugmore, Dan; Shattuck, Jeff; Tayebati, Parviz

    2016-03-01

    TeraDiode is manufacturing multi-kW-class ultra-high brightness fiber-coupled direct diode lasers for industrial applications. A fiber-coupled direct diode laser with a power level of 4,680 W from a 100 μm core diameter, <0.08 numerical aperture (NA) output fiber at a single center wavelength was demonstrated. Our TeraBlade industrial platform achieves world-record brightness levels for direct diode lasers. The fiber-coupled output corresponds to a Beam Parameter Product (BPP) of 3.5 mm-mrad and is the lowest BPP multi-kW-class direct diode laser yet reported. This laser is suitable for industrial materials processing applications, including sheet metal cutting and welding. This 4-kW fiber-coupled direct diode laser has comparable brightness to that of industrial fiber lasers and CO2 lasers, and is over 10x brighter than state-of-the-art direct diode lasers. We have also demonstrated novel high peak power lasers and high brightness Mid-Infrared Lasers.

  9. Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition

    SciTech Connect

    Demidov, E. S. Podol'skii, V. V.; Lesnikov, V. P.; Sapozhnikov, M. V.; Druzhnov, D. M.; Gusev, S. N.; Gribkov, B. A.; Filatov, D. O.; Stepanova, Yu. S.; Levchuk, S. A.

    2008-01-15

    Properties of thin (30-100 nm) layers of diluted magnetic semiconductors based on diamond-like compounds III-V (InSb and GaSb) and elemental semiconductors Ge and Si doped with 3d impurities of manganese and iron up to 15% were measured and discussed. The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates. The ferromagnetism of layers with the Curie temperature up to 500 K appeared in observations of the ferromagnetic resonance, anomalous Hall effect, and magneto-optic Kerr effect. The carrier mobility of diluted magnetic semiconductors is a hundred times larger than that of the previously known highest temperature magnetic semiconductors, i.e., copper and chromium chalcogenides. The difference between changes in the magnetization with temperature in diluted semiconductors based on III-V, Ge, and Si was discussed. A complex structure of the ferromagnetic resonance spectrum in Si:Mn/GaAs was observed. The results of magnetic-force microscopy showed a weak correlation between the surface relief and magnetic inhomogeneity, which suggests that the ferromagnetism is caused by the 3d-impurity solid solution, rather than ferromagnetic phase inclusions.

  10. Narrow-band, tunable, semiconductor-laser-based source for deep-UV absorption spectroscopy.

    PubMed

    Kliner, D A; Koplow, J P; Goldberg, L

    1997-09-15

    Tunable, narrow-bandwidth (<200-MHz), ~215-nm radiation was produced by frequency quadrupling the ~860-nm output of a high-power, pulsed GaAlAs tapered amplifier seeded by an external-cavity diode laser. Pulsing the amplifier increased the 860 nm?215 nm conversion efficiency by 2 orders of magnitude with respect to cw operation. Detection of nitric oxide and sulfur dioxide by high-resolution absorption spectroscopy was demonstrated. PMID:18188256

  11. Laser-based irradiation apparatus and method to measure the functional dose-rate response of semiconductor devices

    DOEpatents

    Horn, Kevin M.

    2008-05-20

    A broad-beam laser irradiation apparatus can measure the parametric or functional response of a semiconductor device to exposure to dose-rate equivalent infrared laser light. Comparisons of dose-rate response from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems can determine if aging has affected the device's overall functionality. The dependence of these changes on equivalent dose-rate pulse intensity and/or duration can be measured with the apparatus. The synchronized introduction of external electrical transients into the device under test can be used to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure while exposing the device to dose-rate equivalent infrared laser light.

  12. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  13. Method and system for powering and cooling semiconductor lasers

    SciTech Connect

    Telford, Steven J; Ladran, Anthony S

    2014-02-25

    A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

  14. Ultralow noise miniature external cavity semiconductor laser

    PubMed Central

    Liang, W.; Ilchenko, V. S.; Eliyahu, D.; Savchenkov, A. A.; Matsko, A. B.; Seidel, D.; Maleki, L.

    2015-01-01

    Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth. PMID:26104321

  15. Ultralow noise miniature external cavity semiconductor laser

    NASA Astrophysics Data System (ADS)

    Liang, W.; Ilchenko, V. S.; Eliyahu, D.; Savchenkov, A. A.; Matsko, A. B.; Seidel, D.; Maleki, L.

    2015-06-01

    Advanced applications in optical metrology demand improved lasers with high spectral purity, in form factors that are small and insensitive to environmental perturbations. While laboratory-scale lasers with extraordinarily high stability and low noise have been reported, all-integrated chip-scale devices with sub-100 Hz linewidth have not been previously demonstrated. Lasers integrated with optical microresonators as external cavities have the potential for substantial reduction of noise. However, stability and spectral purity improvements of these lasers have only been validated with rack-mounted support equipment, assembled with fibre lasers to marginally improve their noise performance. In this work we report on a realization of a heterogeneously integrated, chip-scale semiconductor laser featuring 30-Hz integral linewidth as well as sub-Hz instantaneous linewidth.

  16. Recent advances in optically pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chilla, Juan; Shu, Qi-Ze; Zhou, Hailong; Weiss, Eli; Reed, Murray; Spinelli, Luis

    2007-02-01

    Optically pumped semiconductor lasers offer significant advantages with respect to all traditional diode-pumped solid state lasers (including fiber lasers) in regards to wavelength flexibility, broad pump tolerance, efficient spectral and spatial brightness conversion and high power scaling. In this talk we will describe our recent progress in the lab and applying this technology to commercial systems. Results include diversified wavelengths from 460 to 570nm, power scaling to >60W of CW 532nm, and the launch of a low cost 5W CW visible source for forensic applications.

  17. Alexandrite laser pumped by semiconductor lasers

    SciTech Connect

    Scheps, R.; Gately, B.M.; Myers, J.F. ); Krasinski, J.S. ); Heller, D.F. )

    1990-06-04

    We report the first operation of a direct diode-pumped tunable chromium-doped solid-state laser. A small alexandrite (Cr:BeAl{sub 2}O{sub 4}) crystal was longitudinally pumped by two visible laser diodes. The threshold pump power was 12 mW using the {ital R}{sub 1} line at 680.4 nm for the pump transition, and the slope efficiency was 25%. The measured laser output bandwidth was 2.1 nm.

  18. Integrated semiconductor twin-microdisk laser under mutually optical injection

    SciTech Connect

    Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng; Yang, Yue-De; Xiao, Jin-Long; Huang, Yong-Zhen

    2015-05-11

    We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due to strong optical interaction between the two microdisks.

  19. High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier.

    PubMed

    Ferrari, G; Mewes, M O; Schreck, F; Salomon, C

    1999-02-01

    The output of two grating-stabilized external-cavity diode lasers was injected into a semiconductor tapered amplif ier in a master oscillator-power amplif ier (MOPA) configuration. At a wavelength of 671 nm this configuration produced 210 mW of power in a diffraction-limited mode with two frequency components of narrow linewidth. The frequency difference delta was varied from 20 MHz to 12 GHz, while the power ratio of the two components was freely adjustable. For delta < 2 GHz additional frequency sidebands appear in the output of the MOPA. This configuration is a f lexible and simple high-power cw laser source for light with multiple narrow-linewidth frequency components. PMID:18071437

  20. Visible-wavelength semiconductor lasers and arrays

    DOEpatents

    Schneider, Jr., Richard P.; Crawford, Mary H.

    1996-01-01

    A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

  1. SEMICONDUCTOR DEVICES: Frequency and wavelength tunable optical microwave source based on a distributed Bragg reflector self-pulsation laser

    NASA Astrophysics Data System (ADS)

    Yang, Liu; Yu, Sun; Duanhua, Kong; Baojun, Wang; Jing, Bian; Xin, An; Lingjuan, Zhao; Wei, Wang

    2010-06-01

    A frequency and wavelength tunable self-pulsation laser based on DBR laser devices is reported for the first time. This laser generates continuous tunable optical microwave in the range of 1.87-21.81 GHz with 3-dB linewidth about 10 MHz by tuning the injection currents on the front and back gain sections, and exhibits wavelength tuning range from 1536.28 to 1538.73 nm by tuning the injection currents on the grating section.

  2. Optical injection in semiconductor ring lasers

    SciTech Connect

    Coomans, W.; Beri, S.; Sande, G. Van der; Gelens, L.; Danckaert, J.

    2010-03-15

    We theoretically investigate optical injection in semiconductor ring lasers and disclose several dynamical regimes. Through numerical simulations and bifurcation continuation, two separate parameter regions in which two different injection-locked solutions coexist are revealed, in addition to a region in which a frequency-locked limit cycle coexists with an injection-locked solution. Finally, an antiphase chaotic regime without the involvement of any carrier dynamics is revealed. Parallels are drawn with the onset of chaos in the periodically forced Duffing oscillator.

  3. Resonant activation in bistable semiconductor lasers

    SciTech Connect

    Lepri, Stefano; Giacomelli, Giovanni

    2007-08-15

    We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of two-mode semiconductor lasers. We present a series of simulations of a rate-equation model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions apply to both edge-emitting and vertical cavity lasers, thus opening the way to several experimental tests in such optical systems.

  4. Optical communication with semiconductor laser diode

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, X.

    1989-01-01

    This interim report describes the progress in the construction of a 220 Mbps Q=4 PPM optical communication system that uses a semiconductor laser as the optical transmitter and an avalanche photodiode (APD) as the photodetector. The transmitter electronics have been completed and contain both GaAs and ECL III IC's. The circuit was able to operate at a source binary data rate from 75 Mbps to 290 Mbps with pulse rise and fall times of 400 ps. The pulse shapes of the laser diode and the response from the APD/preamplifier module were also measured.

  5. Squeezing in an injection-locked semiconductor laser

    NASA Astrophysics Data System (ADS)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

    1993-09-01

    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  6. Use of a semiconductor diode laser in laser prostatectomy

    NASA Astrophysics Data System (ADS)

    Sakr, Ghazi; Watson, Graham M.; Lawrence, William

    1996-05-01

    The gold standard surgical treatment of benign prostatic hyperplasia (BPH) is transurethral resection of the prostate (TURP). Over the past few years, TURP has been challenged by laser prostatectomy, a technique that offered many advantages including minimal bleeding, short hospital stay, no fluid absorption, rapid learning curve and better change to preserve antegrade ejaculation. Laser prostatectomy can be done by vaporizing or coagulating prostatic tissue and more recently by using a combination of both: The hybrid technique Nd:YAG lasers have been used, (coupled with contact tips or with side firing or even bare fibers) to either coagulate or vaporize prostatic tissue. Recently semiconductor diode lasers have become available and offer certain advantages. They are compact portable units with no need for water cooling, yet they have sufficient power for tissue vaporization. Diomed (Cambridge, U.K.), produces a 60 W gallium aluminum arsenide semiconductor diode laser emitting at 810 nm. We report the first clinical experience using a semiconductor diode laser for prostates using a combination of contact tip and sidefiring.

  7. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    DOEpatents

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  8. Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

    SciTech Connect

    Podoskin, A. A. Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A.; Tarasov, I. S.

    2015-08-15

    A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching between mode structures with various Q-factors are considered.

  9. Approaches toward a blue semiconductor laser

    NASA Technical Reports Server (NTRS)

    Ladany, I.

    1989-01-01

    Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.

  10. Pseudorelativistic laser-semiconductor quantum plasma interactions.

    PubMed

    Wang, Yunliang; Eliasson, Bengt

    2016-04-01

    A model is presented for the nonlinear interaction between a large-amplitude laser and semiconductor plasma in the semirelativistic quantum regime. The collective behavior of the electrons in the conduction band of a narrow-gap semiconductor is modeled by a Klein-Gordon equation, which is nonlinearly coupled with the electromagnetic (EM) wave through the Maxwell equations. The parametric instabilities involving the stimulated Raman scattering and modulational instabilities are analyzed theoretically and the resulting dispersion relation relation is solved numerically to assess the quantum effects on the instability. The study of the quasi-steady-state solution of the system and direct numerical simulations demonstrate the possibility of the formation of localized EM solitary structures trapped in electrons density holes. PMID:27176416

  11. Pseudorelativistic laser-semiconductor quantum plasma interactions

    NASA Astrophysics Data System (ADS)

    Wang, Yunliang; Eliasson, Bengt

    2016-04-01

    A model is presented for the nonlinear interaction between a large-amplitude laser and semiconductor plasma in the semirelativistic quantum regime. The collective behavior of the electrons in the conduction band of a narrow-gap semiconductor is modeled by a Klein-Gordon equation, which is nonlinearly coupled with the electromagnetic (EM) wave through the Maxwell equations. The parametric instabilities involving the stimulated Raman scattering and modulational instabilities are analyzed theoretically and the resulting dispersion relation relation is solved numerically to assess the quantum effects on the instability. The study of the quasi-steady-state solution of the system and direct numerical simulations demonstrate the possibility of the formation of localized EM solitary structures trapped in electrons density holes.

  12. Self-collimated unstable resonator semiconductor laser

    NASA Technical Reports Server (NTRS)

    Lang, Robert J. (Inventor)

    1993-01-01

    Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror M sub 1 and a small convex mirror M sub 2 on opposite surfaces of a semiconductor body of a material having an effective index of refraction denoted by n, where the respective mirror radii R sub 1, R sub 2 and beam radii r sub 1, r sub 2 are chosen to satisfy a condition (R sub 2)/(1 + r sub 1) = (n - 1)/n, with a value of geometric magnification 1 less than or equal to M less than or equal to (n + 1)/(n - 1) where r sub 1 and r sub 2 are the radii of counterpropagating beams at respective mirrors of radii R sub 1 and R sub 2.

  13. Self-collimated unstable resonator semiconductor laser

    NASA Astrophysics Data System (ADS)

    Lang, Robert J.

    1991-08-01

    Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror (M sub 1) and a small convex mirror (M sub 2) on opposite surfaces of a semiconductor body of a material having an effective index of refraction denoted by n, where the respective mirror radii (R sub 1, R sub 2) and beam radii (r sub 1, r sub 2) are chosen to satisfy a condition (R sub 2)/(1+r sub 1) = (n-1)/n, with a value of geometric magnification 1 less than or equal to M less than or equal to (n+1)/(n-1) where r (sub 1) and r (sub 2) are the radii of counterpropagating beams at respective mirrors of radii R (sub 1) and R (sub 2).

  14. Semiconductor Lasers Containing Quantum Wells in Junctions

    NASA Technical Reports Server (NTRS)

    Yang, Rui Q.; Qiu, Yueming

    2004-01-01

    In a recent improvement upon In(x)Ga(1-x)As/InP semiconductor lasers of the bipolar cascade type, quantum wells are added to Esaki tunnel junctions, which are standard parts of such lasers. The energy depths and the geometric locations and thicknesses of the wells are tailored to exploit quantum tunneling such that, as described below, electrical resistances of junctions and concentrations of dopants can be reduced while laser performances can be improved. In(x)Ga(1-x)As/InP bipolar cascade lasers have been investigated as sources of near-infrared radiation (specifically, at wavelengths of about 980 and 1,550 nm) for photonic communication systems. The Esaki tunnel junctions in these lasers have been used to connect adjacent cascade stages and to enable transport of charge carriers between them. Typically, large concentrations of both n (electron-donor) and p (electron-acceptor) dopants have been necessary to impart low electrical resistances to Esaki tunnel junctions. Unfortunately, high doping contributes free-carrier absorption, thereby contributing to optical loss and thereby, further, degrading laser performance. In accordance with the present innovation, quantum wells are incorporated into the Esaki tunnel junctions so that the effective heights of barriers to quantum tunneling are reduced (see figure).

  15. Visible-wavelength semiconductor lasers and arrays

    DOEpatents

    Schneider, R.P. Jr.; Crawford, M.H.

    1996-09-17

    The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

  16. A novel tunable semiconductor laser based on a sampled grating reflector and an interleaved sampled grating reflector

    NASA Astrophysics Data System (ADS)

    Wang, Hao; Zhao, Jialin; Yu, Yonglin

    2011-12-01

    A widely tunable distributed Bragg reflector (DBR) laser with gratings of simpler structure compare to other types of widely tunable (around 100 nm) lasers is proposed for achieving wide wavelength tuning range (> 100 nm), which consists a front reflector based on a normal sampled grating (SG) with a small duty ratio (the ratio of the grating pitch length to the sampling period), and a rear reflector based on a properly designed interleaved sampled grating (ISG). The interleaved sampled grating (ISG) has an advantage over other complex structures, it is easy for fabrication and reflection spectrum of the grating is stable while tuning. Simulation results demonstrated that characteristics of the reflection spectrums of the both reflectors is good for wide wavelength tuning, and the wavelength tuning range of a DBR laser based on this design can be over 100nm.

  17. Optically pumped DBR-free semiconductor disk lasers.

    PubMed

    Yang, Zhou; Albrecht, Alexander R; Cederberg, Jeffrey G; Sheik-Bahae, Mansoor

    2015-12-28

    We report high power distributed Bragg reflector (DBR)-free semiconductor disk lasers. With active regions lifted off and bonded to various transparent heatspreaders, the high thermal impedance and narrow bandwidth of DBRs are mitigated. For a strained InGaAs multi-quantum-well sample bonded to a single-crystalline chemical-vapor deposited diamond, a maximum CW output power of 2.5 W and a record 78 nm tuning range centered at λ≈1160 nm was achieved. Laser operation using a total internal reflection geometry is also demonstrated. Furthermore, analysis for power scaling, based on thermal management, is presented. PMID:26831984

  18. Self-mode-locking semiconductor disk laser.

    PubMed

    Gaafar, Mahmoud; Richter, Philipp; Keskin, Hakan; Möller, Christoph; Wichmann, Matthias; Stolz, Wolfgang; Rahimi-Iman, Arash; Koch, Martin

    2014-11-17

    The development of mode-locked semiconductor disk lasers received striking attention in the last 14 years and there is still a vast potential of such pulsed lasers to be explored and exploited. While for more than one decade pulsed operation was strongly linked to the employment of a saturable absorber, self-mode-locking emerged recently as an effective and novel technique in this field - giving prospect to a reduced complexity and improved cost-efficiency of such lasers. In this work, we highlight recent achievements regarding self-mode-locked semiconductor devices. It is worth to note, that although nonlinear effects in the active medium are expected to give rise to self-mode-locking, this has to be investigated with care in future experiments. However, there is a controversy whether results presented with respect to self-mode-locking truly show mode-locking. Such concerns are addressed in this work and we provide a clear evidence of mode-locking in a saturable-absorber-free device. By using a BBO crystal outside the cavity, green light originating from second-harmonic generation using the out-coupled laser beam is demonstrated. In addition, long-time-span pulse trains as well as radiofrequency-spectra measurements are presented for our sub-ps pulses at 500 MHz repetition rate which indicate the stable pulse operation of our device. Furthermore, a long-time-span autocorrelation trace is introduced which clearly shows absence of a pedestal or double pulses. Eventually, a beam-profile measurement reveals the excellent beam quality of our device with an M-square factor of less than 1.1 for both axes, showing that self-mode-locking can be achieved for the fundamental transverse mode.

  19. Fabrication and Characterization of Edge-Emitting Semiconductor Lasers

    NASA Astrophysics Data System (ADS)

    Song, Junyeob

    The semiconductor laser was invented in 1962, and has recently become ubiquitous in modern life. This thesis focuses on the development of a semiconductor laser fabricating process which utilizes semiconductor manufacturing technology in a cleanroom environment including photolithography, etching, deposition, and bonding processes. A photomask for patterning is designed, recipes of photolithography process and etching process are developed with experiments. This work gives how to develop the process of fabrication and determine the parameters for each processes. A series of semiconductor laser devices are then fabricated using the developed process and characterization is performed to assess device performance with industrial standard methods. A fabricated device has 18W power and 11% conversion efficiency.

  20. Phase noise reduction in semiconductor lasers by optical negative feedback

    NASA Astrophysics Data System (ADS)

    Yasaka, Hiroshi; Aoyama, Konosuke; Yokota, Nobuhide

    2016-04-01

    Phase noise of a single mode semiconductor laser is reduced drastically by introducing a newly proposed optical negative feedback scheme. Proof-of-concept experiment confirms that the spectral linewidth of a semiconductor laser can be reduced to 1/1,000 successfully by applying the scheme.

  1. Ferromagnet/semiconductor based spintronic devices

    NASA Astrophysics Data System (ADS)

    Saha, Dipankar

    Spintronics is an emerging field which is great interest for its potential to provide high-speed and low-power novel devices and eventually replace and/or complement conventional silicon-based metal-oxide-semiconductor (MOS) devices. Spin-based optoelectronic devices provide improved laser performance and polarized light sources for secure communication. Spintronics has therefore received a lot of interest with the potential for conventional and novel applications. Spintronics has been investigated both in all-metal and semiconductor based platforms. Spin-based ferromagnet/semiconductor heterojunction devices are particularly attractive compared to all-metal spintronic devices due to the versatility and the long electron spin coherence time in semiconductors. Here we have investigated semiconductor based spintronic devices for logic, memory and communication applications. We have demonstrated electrical injection and detection of spin in a MnAs/GaAs lateral spin valve. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K have been measured in these devices. Spin polarization in semiconductors is usually very small and difficult to detect. We have therefore theoretically designed and experimentally demonstrated a spin-current amplifier to alleviate this problem. A spin polarization of 100% has been measured at 150 K in these devices. We have emphasized the importance of finite sizes of ferromagnetic contact pads in terms of two-dimensional spin-diffusion in lateral spintronic devices, which enhances spin-polarization. We have discovered a new phenomenon observing electrically driven spin-dynamics of paramagnetic impurities. We have demonstrated a spin-capacitor using this novel phenomenon. In this study we have also demonstrated a spin-polarized quantum dot spin-laser which is a fundamental spin-based optoelectronic device. An output circular polarization of 8% and threshold current reduction of 14% have been measured at 200 K. We have also demonstrated

  2. Two-mode dynamics in different semiconductor laser structures

    NASA Astrophysics Data System (ADS)

    Scirè, Alessandro; Sorel, Marc; Colet, Pere; Tessone, Claudio Juan; Mirasso, Claudio R.; San Miguel, Maxi

    2006-04-01

    We review three two-mode models for different semiconductor laser structures: Vertical-Cavity Surface-Emitting Lasers (VCSELs), Twin-Stripe Semiconductor-Lasers (TSSL), and Semiconductor Ring Lasers (SRL). The VCSELs model and TSSL model display rich dynamic behavior when a saturable absorber is embedded in the cavity. VCSELs with saturable absorber showed polarization chaos, which found applications in encoded communications; TSSLs with saturable absorber show coherent locked states as well as chaotic behavior; and SRLs show a complex two-mode dynamics giving rise to bidirectional operation, alternate oscillations and spontaneous symmetry breaking toward quasi-unidirectional bistable solutions, with potential applications to all-optical switching.

  3. Multi-spectral imaging with mid-infrared semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Wang, Yi; Wang, Yang; Le, Han Q.

    2006-01-01

    Multi-spectral laser imaging can be a useful technology for target discrimination, classification, and identification based on object spectral signatures. The mid-IR region (~3-14 μm) is particularly rich of molecular spectroscopic fingerprints, but the technology has been under utilized. Compact, potentially inexpensive semiconductor lasers may allow more cost-effective applications. This paper describes a development of semiconductor-laser-based multi-spectral imaging for both near-IR and mid-IR, and demonstrates the potential of this technology. The near-IR study employed 7 wavelengths from 0.635-1.55 μm, and used for system engineering evaluation as well as for studying the fundamental aspects of multi-spectral laser imaging. These include issues of wavelength-dependence scattering as a function of incident and receiving angle and the polarization effects. Stokes vector imaging and degree-of-linear-polarization were shown to reveal significant information to characterize the targets. The mid-IR study employed 4 wavelengths from 3.3-9.6 μm, and was applied to diverse targets that consist of natural and man-made materials and household objects. It was shown capable to resolve and distinguish small spectral differences among various targets, thanks to the laser radiometric and spectral accuracy. Colorless objects in the visible were shown with "colorful" signatures in the mid-IR. An essential feature of the study is an advanced system architecture that employs wavelength-division-multiplexed laser beams for high spectral fidelity and resolution. In addition, unlike conventional one-transmitter and one receiver design, the system is based on a scalable CDMA network concept with multiple transmitters and receivers to allow efficient information acquisition. The results suggest that multi-spectral laser imaging in general can be a unique and powerful technology for wide ranging applications.

  4. Aqueous Based Semiconductor Nanocrystals.

    PubMed

    Jing, Lihong; Kershaw, Stephen V; Li, Yilin; Huang, Xiaodan; Li, Yingying; Rogach, Andrey L; Gao, Mingyuan

    2016-09-28

    This review summarizes traditional and recent nonconventional, bioinspired, methods for the aqueous synthesis of colloidal semiconductor quantum dots (QDs). The basic chemistry concepts are critically emphasized at the very beginning as these are strongly correlated with the selection of ligands and the optimal formation of aqueous QDs and their more sophisticated structures. The synergies of biomimetic and biosynthetic methods that can combine biospecific reactivity with the robust and strong optical responses of QDs have also resulted in new approaches to the synthesis of the nanoparticles themselves. A related new avenue is the recent extension of QD synthesis to form nanoparticles endowed with chiral optical properties. The optical characteristics of QD materials and their advanced forms such as core/shell heterostructures, alloys, and doped QDs are discussed: from the design considerations of optical band gap tuning, the control and reduction of the impact of surface traps, the consideration of charge carrier processes that affect emission and energy and charge transfer, to the impact and influence of lattice strain. We also describe the considerable progress in some selected QD applications such as in bioimaging and theranostics. The review concludes with future strategies and identification of key challenges that still need to be resolved in reaching very attractive, scalable, yet versatile aqueous syntheses that may widen the scope of commercial applications for semiconductor nanocrystals. PMID:27586892

  5. Semiconductor single crystal external ring resonator cavity laser and gyroscope

    SciTech Connect

    Spitzer, M.P.

    1993-08-31

    A ring laser is described comprising: a semiconductor single crystal external ring resonator cavity having a plurality of reflecting surfaces defined by the planes of the crystal and establishing a closed optical path; and a discrete laser medium disposed in said semiconductor single crystal external ring resonator cavity for generating coherent light in said cavity, wherein said resonator cavity is decoupled from the laser medium.

  6. Evaluation and testing of semiconductor laser reliability in optic system

    NASA Astrophysics Data System (ADS)

    Tang, Wenyan; Fan, Xianguang; Sun, Heyi

    2007-01-01

    In order to improve the performance of an optic system, a new evaluation and testing methodology for the light source which uses semiconductor laser is presented. A new system, combining high accuracy source and measure capabilities for pulsed testing, is developed to achieve the aim of automatic measurement of Light-Current-Power (LIV) for semiconductor laser. The test can provide customer with L-I, V-I curves and other correlative parameters, such as the threshold current and slope efficiency, and so on. Meanwhile, the change of environment temperature versus lasing wavelength under pulse injection is discussed, and the relationship between the lasing wavelength and the width and cycle of injection pulse is obtained. The temperature character of packaged laser unit is measured conveniently. Making use of the above examined curves and parameters, the reliability of semiconductor laser and quality of device can be compared directly and evaluated accurately. The technique is successfully applied for the evaluation of semiconductor laser reliability.

  7. Optical velocimeters for moving surfaces using gas and semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Belousov, P. Ya.; Dubnistshev, Yu. N.; Meledin, V. G.

    1990-10-01

    A differential arrangement using a laser for the measurement of the velocity of moving surfaces is discussed. Configurations of optical velocimeters with diffraction beam-splitters are shown not to be critical on the wavelength stability of a semiconductor laser. Laser meters measuring the velocity and length of rolled stock have been built on the basis of the devices considered.

  8. Monolayer semiconductor nanocavity lasers with ultralow thresholds

    NASA Astrophysics Data System (ADS)

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

    2015-04-01

    Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

  9. Monolayer semiconductor nanocavity lasers with ultralow thresholds.

    PubMed

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

    2015-04-01

    Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies. PMID:25778703

  10. Coherent Semiconductor Laser Systems For Optical Intersatellite Links

    NASA Astrophysics Data System (ADS)

    Somerset, R. J.; Fletcher, G. D.

    1990-04-01

    Semiconductor laser based optical intersatellite links are attractive for use in both DRS type applications, and as links in the existing satellite-based telecommunications networks (for example between EUTELSAT SMS and INTELSAT IBS business services satellites). Initial ISL experiments will demonstrate direct detection systems using intensity modulation. Coherent systems offer significant improvements over these: the use of frequency shift keying modulation and heterodyne receivers provide significantly improved system sensitivities, which will allow practical systems with reliable laser sources (50 mW CW), and small optical telescopes (20 cm diameter). The SILEX ADD-ON CHANNEL is intended to demonstrate the potential of such systems within the framework of the ESA SILEX program.

  11. Monolayer semiconductor nanocavity lasers with ultralow thresholds

    DOE PAGES

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; et al

    2015-03-16

    Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots7, extreme difficulty in current injection8, and lackmore » of compatibility with electronic circuits7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.« less

  12. Monolayer semiconductor nanocavity lasers with ultralow thresholds

    SciTech Connect

    Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.; Feng, Liefeng; Yan, Jiaqiang; Mandrus, David G.; Hatami, Fariba; Yao, Wang; Vučković, Jelena; Majumdar, Arka; Xu, Xiaodong

    2015-03-16

    Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter1–5, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC)6–8. However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots7, extreme difficulty in current injection8, and lack of compatibility with electronic circuits7,8. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers7. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

  13. Use of a semiconductor-diode laser in urology

    NASA Astrophysics Data System (ADS)

    Watson, Graham M.

    1994-05-01

    The gallium arsenide semiconductor laser can emit in the near infrared where the depth of penetration into tissue is great although scattering is less than with the Nd:YAG laser. The laser is highly compact. It runs off a normal electrical outlet with no cooling requirement. It is therefore quiet and convenient. The laser has been assessed in a wide variety of applications in our urological department.

  14. Hybrid organic semiconductor lasers for bio-molecular sensing.

    PubMed

    Haughey, Anne-Marie; Foucher, Caroline; Guilhabert, Benoit; Kanibolotsky, Alexander L; Skabara, Peter J; Burley, Glenn; Dawson, Martin D; Laurand, Nicolas

    2014-01-01

    Bio-functionalised luminescent organic semiconductors are attractive for biophotonics because they can act as efficient laser materials while simultaneously interacting with molecules. In this paper, we present and discuss a laser biosensor platform that utilises a gain layer made of such an organic semiconductor material. The simple structure of the sensor and its operation principle are described. Nanolayer detection is shown experimentally and analysed theoretically in order to assess the potential and the limits of the biosensor. The advantage conferred by the organic semiconductor is explained, and comparisons to laser sensors using alternative dye-doped materials are made. Specific biomolecular sensing is demonstrated, and routes to functionalisation with nucleic acid probes, and future developments opened up by this achievement, are highlighted. Finally, attractive formats for sensing applications are mentioned, as well as colloidal quantum dots, which in the future could be used in conjunction with organic semiconductors.

  15. High-power semiconductor laser array packaged on microchannel cooler using gold-tin soldering technology

    NASA Astrophysics Data System (ADS)

    Wang, Jingwei; Kang, Lijun; Zhang, Pu; Nie, Zhiqiang; Li, Xiaoning; Xiong, Lingling; Liu, Xingsheng

    2012-03-01

    High power semiconductor laser arrays have found increased applications in many fields. In this work, a hard soldering microchannel cooler (HSMCC) technology was developed for packaging high power diode laser array. Numerical simulations of the thermal behavior characteristics of hard solder and indium solder MCC-packaged diode lasers were conducted and analyzed. Based on the simulated results, a series of high power HSMCC packaged diode laser arrays were fabricated and characterized. The test and statistical results indicated that under the same output power the HSMCC packaged laser bar has lower smile and high reliability in comparison with the conventional copper MCC packaged laser bar using indium soldering technology.

  16. Laser Marking Of Passive Components, Hybrids And Semiconductors

    NASA Astrophysics Data System (ADS)

    Higgins, J. F.

    1986-07-01

    Pulsed CO2 TEA lasers are widely used in the electronics and semiconductor industries to mark passive components, hybrids and semiconductors. In addition to marking simple product identifying codes, an increasing requirement is to have the laser system mark variable information, derived from test results, on these products. This has required the development of laser beam delivery systems of increasing sophistication, capable of marking both alphanumerics and machine readable bar-codes, that are interfaced to test and process control equipment to permit high-speed, variable information coding.

  17. Broadly tunable DBR-free semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Hackett, Shawn; Sheik-Bahae, Mansoor

    2016-03-01

    We report a DBR-free semiconductor disk lasers centered at 1160 nm with a tuning range of 78 nm, and ongoing effort on our DBR-free SDL centered at 1040 nm. Compared with conventional semiconductor disk lasers, DBR-free SDLs have a broader effective gain bandwidth. In CW operation, 2.5 W output power at 1160 nm and 6 W at 1055 nm were collected from the two lasers without thermal-rollover. Intracavity loss mitigation, currently underway, should improve power scaling and efficiency in these systems.

  18. FM characteristics and compact modules for coherent semiconductor lasers coupled to an external cavity

    SciTech Connect

    Shin, C.H.; Teshima, M.; Ohtsu, M. ); Imai, T.; Yoshida, J.; Nishide, K. )

    1990-03-01

    FM responses of a semiconductor laser optically coupled off-axis to a confocal Fabry--Perot cavity were measured. It is reported that this cavity acted as a frequency discriminator and as a phase comparator for slow and fast frequency fluctuations, respectively. The crossover between them was determined by a half linewidth of the cavity. Based on these investigations, we made two kinds of coherent semiconductor laser modules. External FP cavities were made by using an optical fiber and a hemispherical micro-lens, respectively. Linewidths of these lasers were less than 25 kHz.

  19. Semiconductor Laser Multi-Spectral Sensing and Imaging

    PubMed Central

    Le, Han Q.; Wang, Yang

    2010-01-01

    Multi-spectral laser imaging is a technique that can offer a combination of the laser capability of accurate spectral sensing with the desirable features of passive multispectral imaging. The technique can be used for detection, discrimination, and identification of objects by their spectral signature. This article describes and reviews the development and evaluation of semiconductor multi-spectral laser imaging systems. Although the method is certainly not specific to any laser technology, the use of semiconductor lasers is significant with respect to practicality and affordability. More relevantly, semiconductor lasers have their own characteristics; they offer excellent wavelength diversity but usually with modest power. Thus, system design and engineering issues are analyzed for approaches and trade-offs that can make the best use of semiconductor laser capabilities in multispectral imaging. A few systems were developed and the technique was tested and evaluated on a variety of natural and man-made objects. It was shown capable of high spectral resolution imaging which, unlike non-imaging point sensing, allows detecting and discriminating objects of interest even without a priori spectroscopic knowledge of the targets. Examples include material and chemical discrimination. It was also shown capable of dealing with the complexity of interpreting diffuse scattered spectral images and produced results that could otherwise be ambiguous with conventional imaging. Examples with glucose and spectral imaging of drug pills were discussed. Lastly, the technique was shown with conventional laser spectroscopy such as wavelength modulation spectroscopy to image a gas (CO). These results suggest the versatility and power of multi-spectral laser imaging, which can be practical with the use of semiconductor lasers. PMID:22315555

  20. The 1.083 micron tunable CW semiconductor laser

    NASA Technical Reports Server (NTRS)

    Wang, C. S.; Chen, Jan-Shin; Lu, Ken-Gen; Ouyang, Keng

    1991-01-01

    A tunable CW laser is desired to produce light equivalent to the helium spectral line at 1.08 microns. This laser will serve as an optical pumping source for He-3 and He-4 atoms used in space magnetometers. This light source can be fabricated either as a semiconductor laser diode or a pumped solid state laser. Continuous output power of greater than 10 mW is desired. Semiconductor lasers can be thermally tuned, but must be capable of locking onto the helium resonance lines. Solid state lasers must have efficient pumping sources suitable for space configuration. Additional requirements are as follows: space magnetometer applications will include low mass (less than 0.5 kg), low power consumption (less than 0.75 W), and high stability/reliability for long missions (5-10 years).

  1. Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices

    DOEpatents

    Horn, Kevin M.

    2006-03-28

    A scanned, pulsed, focused laser irradiation apparatus can measure and image the photocurrent collection resulting from a dose-rate equivalent exposure to infrared laser light across an entire silicon die. Comparisons of dose-rate response images or time-delay images from before, during, and after accelerated aging of a device, or from periodic sampling of devices from fielded operational systems allows precise identification of those specific age-affected circuit structures within a device that merit further quantitative analysis with targeted materials or electrical testing techniques. Another embodiment of the invention comprises a broad-beam, dose rate-equivalent exposure apparatus. The broad-beam laser irradiation apparatus can determine if aging has affected the device's overall functionality. This embodiment can be combined with the synchronized introduction of external electrical transients into a device under test to simulate the electrical effects of the surrounding circuitry's response to a radiation exposure.

  2. Frequency modulation noise and linewidth reduction in a semiconductor laser by means of negative frequency feedback technique

    SciTech Connect

    Saito, S.; Nilsson, O.; Yamamoto, Y.

    1985-01-01

    Electrical negative frequency feedback control has been shown to reduce frequency modulation (FM) noise linewidth in semiconductor lasers. The method is based on the direct frequency modulation capability of a semiconductor laser. An error signal is extracted through optical heterodyne frequency discrimination detection using a stable master laser. FM noise is reduced by more than 20 dB and linewidth is reduced by one order of magnitude.

  3. Wavelength-Tunable Rectangular Pulses Generated from All-Fiber Mode-Locked Laser Based on Semiconductor Saturable Absorber Mirror

    NASA Astrophysics Data System (ADS)

    Wang, Zhao-Kum; Zou, Feng; Wang, Zi-Wei; Du, Song-Tao; Zhou, Jun

    2016-09-01

    Not Available Supported by the National High-Technology Research and Development Program of China under Grant No 2014AA041901, the NSAF Foundation of National Natural Science Foundation of China under Grant No U1330134, the Opening Project of Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques under Grant No 2012ADL02, and the National Natural Science Foundation of China under Grant No 61308024.

  4. Efficiency of continuous-wave solar pumped semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Johnson, Stanley; Küppers, Franko; Pau, Stanley

    2013-04-01

    We report the results of an efficient solar pumped semiconductor laser system that uses high efficiency multi-junction photovoltaic cells and laser diodes in order to achieve the sunlight to laser light conversion efficiency of over 10% without any active cooling and concentration optics. Semiconductor lasers with wavelength from 445 nm to 1550 nm are powered directly by an array of photovoltaic (PV) cells under one sun illumination (100 mW/cm2). The maximum energy efficiency reaches 10.34% at 976 nm with an output power of 4.31 W. This system is inherently more efficient than direct solar pumped lasers that have been studied in the past and could play a key role in future renewable energy production and power beaming applications.

  5. Reliability of Semiconductor Laser Packaging in Space Applications

    NASA Technical Reports Server (NTRS)

    Gontijo, Ivair; Qiu, Yueming; Shapiro, Andrew A.

    2008-01-01

    A typical set up used to perform lifetime tests of packaged, fiber pigtailed semiconductor lasers is described, as well as tests performed on a set of four pump lasers. It was found that two lasers failed after 3200, and 6100 hours under device specified bias conditions at elevated temperatures. Failure analysis of the lasers indicates imperfections and carbon contamination of the laser metallization, possibly from improperly cleaned photo resist. SEM imaging of the front facet of one of the lasers, although of poor quality due to the optical fiber charging effects, shows evidence of catastrophic damage at the facet. More stringent manufacturing controls with 100% visual inspection of laser chips are needed to prevent imperfect lasers from proceeding to packaging and ending up in space applications, where failure can result in the loss of a space flight mission.

  6. Laser interferometric method for determining the carrier diffusion length in semiconductors

    SciTech Connect

    Manukhov, V. V.; Fedortsov, A. B.; Ivanov, A. S.

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  7. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1991-01-01

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

  8. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

    1991-02-19

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

  9. 80 nm tunable DBR-free semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Yang, Z.; Albrecht, A. R.; Cederberg, J. G.; Sheik-Bahae, M.

    2016-07-01

    We report a widely tunable optically pumped distributed Bragg reflector (DBR)-free semiconductor disk laser with 6 W continuous wave output power near 1055 nm when using a 2% output coupler. Using only high reflecting mirrors, the lasing wavelength is centered at 1034 nm and can be tuned up to a record 80 nm by using a birefringent filter. We attribute such wide tunability to the unique broad effective gain bandwidth of DBR-free semiconductor disk lasers achieved by eliminating the active mirror geometry.

  10. Deep-red semiconductor monolithic mode-locked lasers

    NASA Astrophysics Data System (ADS)

    Kong, L.; Wang, H. L.; Bajek, D.; White, S. E.; Forrest, A. F.; Wang, X. L.; Cui, B. F.; Pan, J. Q.; Ding, Y.; Cataluna, M. A.

    2014-12-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications.

  11. Deep-red semiconductor monolithic mode-locked lasers

    SciTech Connect

    Kong, L.; Bajek, D.; White, S. E.; Forrest, A. F.; Cataluna, M. A.; Wang, H. L.; Pan, J. Q.; Wang, X. L.; Cui, B. F.; Ding, Y.

    2014-12-01

    A deep-red semiconductor monolithic mode-locked laser is demonstrated. Multi-section laser diodes based on an AlGaAs multi-quantum-well structure were passively mode-locked, enabling the generation of picosecond optical pulses at 752 nm, at pulse repetition rates of 19.37 GHz. An investigation of the dependence of the pulse duration as a function of reverse bias revealed a predominantly exponential decay trend of the pulse duration, varying from 10.5 ps down to 3.5 ps, which can be associated with the concomitant reduction of absorption recovery time with increasing applied field. A 30-MHz-tunability of the pulse repetition rate with bias conditions is also reported. The demonstration of such a compact, efficient and versatile ultrafast laser in this spectral region paves the way for its deployment in a wide range of applications such as biomedical microscopy, pulsed terahertz generation as well as microwave and millimeter-wave generation, with further impact on sensing, imaging and optical communications.

  12. Microscopic spectral imaging using mid-infrared semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Guo, Bujin-.; Wang, Yi; Peng, Chuan; Luo, Guipeng; Le, Han Q.

    2003-07-01

    Infrared micro-spectroscopy is a useful tool for basic research and biomedical applications. Conventional microspectroscopic imaging apparatuses use thermal sources for sample illumination, which have low brightness, low optical spectral intensity, and high noise. This work evaluates the system engineering advantages of using mid-infrared semiconductor lasers that offer orders-of magnitude higher brightness, spectral intensity, and lower noise. A laser-based microscopic spectral imaging system with focal plane array detectors demonstrated a high signal-to-noise ratio (>20 dB) at video frame rate for a large illuminated area. Microscopic spectral imaging with fixed-wavelength and tunable lasers of 4.6, 6, and 9.3-μm wavelength was applied to a number of representative samples that consist of biological tissues (plant and animal) and solid material (a stack of laminated polymers). Transmission spectral images with ~30-dB dynamic range were obtained with clear evidence of spectral features for different samples. The potential of more advanced systems with a wide coverage of spectral bands is discussed.

  13. Transient mode competition in directly modulated DFB semiconductor laser

    NASA Astrophysics Data System (ADS)

    Xiao, RuLei; Shi, YueChun; Zheng, JiLin; Zhang, YunShan; Zheng, JunShou; Chen, XiangFei

    2015-12-01

    A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift (EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between -1st order (main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent π phase shift (π-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the -1st order wavelength is around the gain peak, while the stable single longitudinal mode (SLM) operation of the -1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation (32 dB extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation.

  14. Nonlinear fibre-optic devices pumped by semiconductor disk lasers

    SciTech Connect

    Chamorovskiy, A Yu; Okhotnikov, Oleg G

    2012-11-30

    Semiconductor disk lasers offer a unique combination of characteristics that are particularly attractive for pumping Raman lasers and amplifiers. The advantages of disk lasers include a low relative noise intensity (-150 dB Hz{sup -1}), scalable (on the order of several watts) output power, and nearly diffraction-limited beam quality resulting in a high ({approx}70 % - 90 %) coupling efficiency into a single-mode fibre. Using this technology, low-noise fibre Raman amplifiers operating at 1.3 {mu}m in co-propagation configuration are developed. A hybrid Raman-bismuth doped fibre amplifier is proposed to further increase the pump conversion efficiency. The possibility of fabricating mode-locked picosecond fibre lasers operating under both normal and anomalous dispersion is shown experimentally. We demonstrate the operation of 1.38-{mu}m and 1.6-{mu}m passively mode-locked Raman fibre lasers pumped by 1.29-{mu}m and 1.48-{mu}m semiconductor disk lasers and producing 1.97- and 2.7-ps pulses, respectively. Using a picosecond semiconductor disk laser amplified with an ytterbium-erbium fibre amplifier, the supercontinuum generation spanning from 1.35 {mu}m to 2 {mu}m is achieved with an average power of 3.5 W. (invited paper)

  15. New achievements in ultralow-threshold semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chen, T. R.; Zhao, Bin; Eng, L. E.; Zhuang, Y. H.; Yariv, Amnon

    1993-05-01

    Various semiconductor laser material system and device structures which have led to the ultralow threshold current (lasers and 0.35 mA (pulsed 0.25 mA) for high reflectivity coated lasers are realized. These low threshold lasers also display excellent dynamic behavior, a direct current modulation bandwidth of 4.6 GHz at a bias current of only 1 mA above threshold has been demonstrated.

  16. Polarimetric optical fiber sensor using a frequency stabilized semiconductor laser

    SciTech Connect

    Tsuchida, H.; Mitsuhashi, Y.; Ishihara, S. )

    1989-05-01

    The authors discuss the performance of a polarimetric optical fiber sensor for remote temperature measurement improved by the use of a frequency stabilized semiconductor laser. The temperature change is measured from the phase delay between two orthogonally polarized modes in a polarization maintaining fiber. The sensor output signal is demodulated utilizing direct modulation of the laser frequency. The center frequency of the modulated laser is locked to a Fabry-Perot interferometer by controlling the injection current. The minimum detectable temperature change is evaluated experimentally to be less than 0.005{sup 0}C, which is seven times smaller than that obtained with the freerunning laser.

  17. Photoelectrolysis of water at high current density - Use of laser light excitation of semiconductor-based photoelectrochemical cells

    NASA Technical Reports Server (NTRS)

    Wrighton, M. S.; Bocarsley, A. B.; Bolts, J. M.

    1978-01-01

    In the present paper, some results are given for UV laser light irradiation of the photoanode (SnO2, SrTiO3, or TiO2) in a cell for the light-driven electrolysis of H2O, at radiation intensities of up to 380 W/sq cm. The properties of the anode material are found to be independent of light intensity. Conversion of UV light to stored chemical energy in the form of 2H2/O2 from H2O was driven at a rate of up to 30 W/sq cm. High O2 evolution rates at the irradiated anodes without changes in the current-voltage curves are attributed to the excess oxidizing power associated with photogenerated holes. A test for this sort of hypothesis for H2 evolution at p-type materials is proposed.

  18. High power, high beam quality laser source with narrow, stable spectra based on truncated-tapered semiconductor amplifier

    NASA Astrophysics Data System (ADS)

    Wang, X.; Erbert, G.; Wenzel, H.; Crump, P.; Eppich, B.; Knigge, S.; Ressel, P.; Ginolas, A.; Maaßdorf, A.; Tränkle, G.

    2013-02-01

    High power diode lasers are increasingly important in many industrial applications. However, an ongoing challenge is to simultaneously obtain high output power, diffraction-limited beam quality and narrow spectral width. One approach to fulfill these requirements is to use a "master oscillator - power amplifier (MOPA)" system. We present recent data on MOPAs using PA designs that have low confinement factor (1%), leading to low modal gain, and low optical loss (<0.5cm-1). Quantum barriers with low refractive index are used to reduce the optical waveguiding due to the active region, which should decrease susceptibility to filament formation. A truncated tapered lateral design was used. Conventional tapered designs have a ridge waveguide (RW) at the entrance of the devices with etched cavity- spoiling grooves at the transition to the tapered gain region. Our amplifier used a truncated tapered design with no RW entrance section. We show that for this approach cavity-spoiling grooves are not necessary, and achieve improved performance when they are omitted, which we attribute to the filament insensitivity of our structure. High beam quality was achieved from a 970nm amplifier with M2 (1/e2) = 1.9, with efficiency of <48% in QCW condition, and <17W diffraction-limited beam maintained in the central lobe. The impact of the in-plane geometrical design was assessed and we show that large surface area is advantageous for device performance. The spectral properties of the amplifier replicated that of the DBRtapered laser, which is used as the master oscillator, with a spectral width of <30pm (FWHM). Design options for further increases in power are presented.

  19. Design and optimization of a widely tunable semiconductor laser for blood oxygenation and blood flow measurements

    NASA Astrophysics Data System (ADS)

    Feng, Yafei; Deng, Haoyu; Song, Guangyi; He, Jian-Jun

    2014-11-01

    A method for measuring blood oxygenation and blood flow rate using a single widely tunable semiconductor laser is proposed and investigated. It is shown that a 700-nm-band tunable laser gives the highest sensitivity for blood oxygen measurement. The corresponding tunable laser is designed using the V-coupled cavity structure. The wavelength tuning range can reach 8 nm, which is sufficient for the blood oxygenation measurement in the 700-nm-band by using the Beer- Lambert law. In contrast to conventional blood oxygenation measurement method based on two LEDs, the laser can be used at the same time to measure the blood flow rate based on the Doppler principle.

  20. All semiconductor laser Doppler anemometer at 1.55 microm.

    PubMed

    Hansen, René Skov; Pedersen, Christian

    2008-10-27

    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300 meters distance range. Especially, we will demonstrate that both the output power as well as the demanding coherence properties required from the laser source can be accomplished by an all semiconductor laser. Preliminary tests at a distance of 40 meters indicate a typical signal to noise ratio of 9 dB. This result is obtained at a clear day with an up-date rate of 12 Hz.

  1. All semiconductor laser Doppler anemometer at 1.55 microm.

    PubMed

    Hansen, René Skov; Pedersen, Christian

    2008-10-27

    We report to our best knowledge the first all semiconductor Laser Doppler Anemometer (LIDAR) for wind speed determination. We will present the design and first experimental results on a focusing coherent cw laser Doppler anemometer for measuring atmospheric wind velocities in the 10 meters to 300 meters distance range. Especially, we will demonstrate that both the output power as well as the demanding coherence properties required from the laser source can be accomplished by an all semiconductor laser. Preliminary tests at a distance of 40 meters indicate a typical signal to noise ratio of 9 dB. This result is obtained at a clear day with an up-date rate of 12 Hz. PMID:18958105

  2. Direct solar pumping of semiconductor lasers: A feasibility study

    NASA Technical Reports Server (NTRS)

    Anderson, Neal G.

    1991-01-01

    The primary goals of the feasibility study are the following: (1) to provide a preliminary assessment of the feasibility of pumping semiconductor lasers in space directly focused sunlight; and (2) to identify semiconductor laser structures expected to operate at the lowest possible focusing intensities. It should be emphasized that the structures under consideration would provide direct optical-to-optical conversion of sunlight into laser light in a single crystal, in contrast to a configuration consisting of a solar cell or battery electrically pumping a current injection laser. With external modulation, such lasers may prove to be efficient sources for intersatellite communications. We proposed to develop a theoretical model of semiconductor quantum-well lasers photopumped by a broadband source, test it against existing experimental data where possible, and apply it to estimating solar pumping requirements and identifying optimum structures for operation for operation at low pump intensities. This report outlines our progress toward these goals. Discussion of several technical details are left to the attached summary abstract.

  3. Visible light surface emitting semiconductor laser

    DOEpatents

    Olbright, Gregory R.; Jewell, Jack L.

    1993-01-01

    A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

  4. Dynamics of a semiconductor laser with frequency shifted feedback

    NASA Astrophysics Data System (ADS)

    Noblet, Yoann; Toomey, Joshua P.; Kane, Deborah M.

    2014-03-01

    Dynamics of the output of a semiconductor laser with frequency-shifted optical feedback system is systematically analyzed. Results from experimental studies using an 830 nm, QW, Fabry-Perot cavity, semiconductor laser are reported. The dynamics are mapped as a function of the level of frequency shifted feedback (FSF) and the injection current. The frequency shift of the optical feedback is the fundamental or a sub-harmonic of the external cavity frequency in the experiments. Multi-GHz-bandwidth real time data collection and analysis is used to investigate the temporal and spectral behaviour of the output power of the nonlinear system. The results are contrasted with those from conventional semiconductor laser with optical feedback systems. Three fundamentally different regimes of operation are identified for the FSF system corresponding to low, medium and high levels of FSF. The low and medium level FSF regimes are consistent with those found in the semiconductor with conventional optical feedback system. It is only when high levels of FSF are used that the output gives a noisy, near periodic output which is similar to the pulsed comb of mode output observed in analogous FSF laser systems using solid state gain media when the FSF is resonant.

  5. Dispersion-managed semiconductor mode-locked ring laser.

    PubMed

    Resan, Bojan; Archundia, Luis; Delfyett, Peter J; Alphonse, Gerard

    2003-08-01

    A novel breathing-mode external sigma-ring-cavity semiconductor mode-locked laser is developed. Intracavity pulse compression and stretching produce linearly chirped pulses with an asymmetric exponential temporal profile. External dispersion compensation reduces the pulse duration to 274 fs (within 10% of the bandwidth limit).

  6. Optical-fiber-coupled optical bistable semiconductor lasers

    SciTech Connect

    Zhing Lichen; Tang Yunxin; Qin Ying; Guo Yili

    1986-12-01

    A compact, low input power optical bistable device, consisting of a photodetector, an optical fiber directional coupler, and a semiconductor laser diode, was presented. The principle is described graphically to explain the observed effects such as hysteresis, differential operational gain and memory functions.

  7. Frequency chirping in semiconductor-optical fiber ring laser

    SciTech Connect

    Zhang, Jiangping; Ye, Peida )

    1990-01-01

    In this letter, a complete small-signal analysis for frequency chirping in the semiconductor-optical fiber ring laser is presented. It shows that chirp-to-power ratio (CPR) strongly depends on the junction phase shift, the optical coupling, and the phase detuning between two cavities, especially if the modulation frequency is below the gigahertz range. 7 refs.

  8. Four-wavemixing in traveling-wave semiconductor laser amplifiers

    SciTech Connect

    Favre, F.; LeGuen, D. )

    1990-05-01

    The authors report nondegenerate four-wave mixing (NDFWM) in simultaneous amplifications of copropagating and counterpropagatind waves with a frequency spacing of a few GHz by a 1.5 {mu}m nonresonant near traveling-wave semiconductor laser amplifier. Time-reversal properties of four-wave mixing are demonstrated.

  9. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  10. Substrate-emitting semiconductor laser with a trapezoidal active region

    SciTech Connect

    Dikareva, N V; Nekorkin, S M; Karzanova, M V; Zvonkov, B N; Aleshkin, V Ya; Dubinov, A A; Afonenko, A A

    2014-04-28

    Semiconductor lasers with a narrow (∼2°) directional pattern in the planes both parallel and perpendicular to the p–n junction are fabricated. To achieve a low radiation divergence in the p–n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p–n junction was ensured by the use of a leaky mode, through which more than 90% of laser power was coupled out. (lasers)

  11. Use of a semiconductor diode laser in urology

    NASA Astrophysics Data System (ADS)

    Watson, Graham M.; Anson, K.

    1993-05-01

    The gallium arsenide semiconductor laser at 805 nm has been used with a variety of delivery fibers to produce actions varying from incision to interstitial coagulation. Clinical experience at this early stage suggests that the laser can be used to cut skin and connective tissue efficiently in air. It may prove at least as effective as the neodymium YAG laser for interstitial coagulation of tumors or prostate. Further efforts are required to promote its action cutting underwater and as a coagulator both in air and water.

  12. Semiconductor laser devices having lateral refractive index tailoring

    DOEpatents

    Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1990-01-01

    A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

  13. Transverse switching due to Hopf bifurcation in semiconductor lasers

    SciTech Connect

    Shore, K.A.; Rozzi, T.E.

    1984-03-01

    A new method for investigating the spatial and temporal stability of semiconductor lasers is presented, which represents the first application of Hopf bifurcation theory to semiconductor lasers. Unlike the classical Hurwitz approach, whose applicability is restricted to a small number of piecewise homogeneous regions at most, details of the spatial distributions of carrier and photon densities can now be included with modest additional computational effort. The actual stability analysis involves solving no more than a 5 X 5 real eigenvalue problem once the steady-state distributions are known. This feature is particularly important where spatial variations play a fundamental role. Numerical results are presented to illustrate the application of the algorithm to oscillations and to nonlinear light-current characteristics in standard stripe-geometry lasers. The further application of the technique to the analysis of optical bistability and high-speed optical switching is discussed.

  14. Power conversion efficiency of semiconductor injection lasers and laser arrays in CW operation

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1985-01-01

    The problem of optimizing power conversion efficiency of semiconductor lasers and laser arrays and minimizing efficiency degradation due to temperature effects is treated. A method for calculating this efficiency is described and some calculated results are presented and discussed. Under some conditions, a small increase in the thermal resistance of the device can result in a large reduction of its efficiency. Temperature effects are important in high-power semiconductor laser, and in particular in laser arrays, where low thermal resistance heat sinking may be crucial to the device operation.

  15. Confocal unstable-resonator semiconductor laser

    NASA Technical Reports Server (NTRS)

    Salzman, J.; Lang, R.; Yariv, A.; Larson, A.

    1986-01-01

    GaAs/GaAlAs heterostructure lasers with a monolithic confocal unstable resonator were demonstrated. The curved mirrors satisfying the confocal condition were fabricated by etching. Close to threshold, the lasers operate in a single lateral mode with a nearly collimated output beam. A single-lobe far-field intensity distribution as narrow as 1.9-deg full width at half maximum was measured.

  16. A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

    SciTech Connect

    Nia, Iman Hassani; Mohseni, Hooman

    2014-07-28

    Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

  17. Laser damage mechanisms in conductive widegap semiconductor films.

    PubMed

    Yoo, Jae-Hyuck; Menor, Marlon G; Adams, John J; Raman, Rajesh N; Lee, Jonathan R I; Olson, Tammy Y; Shen, Nan; Suh, Joonki; Demos, Stavros G; Bude, Jeff; Elhadj, Selim

    2016-08-01

    Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers. PMID:27505731

  18. Synchronous characterization of semiconductor microcavity laser beam

    SciTech Connect

    Wang, T. Lippi, G. L.

    2015-06-15

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam’s tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  19. Synchronous characterization of semiconductor microcavity laser beam.

    PubMed

    Wang, T; Lippi, G L

    2015-06-01

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures.

  20. Synchronous characterization of semiconductor microcavity laser beam.

    PubMed

    Wang, T; Lippi, G L

    2015-06-01

    We report on a high-resolution double-channel imaging method used to synchronously map the intensity- and optical-frequency-distribution of a laser beam in the plane orthogonal to the propagation direction. The synchronous measurement allows us to show that the laser frequency is an inhomogeneous distribution below threshold, but that it becomes homogeneous across the fundamental Gaussian mode above threshold. The beam's tails deviations from the Gaussian shape, however, are accompanied by sizeable fluctuations in the laser wavelength, possibly deriving from manufacturing details and from the influence of spontaneous emission in the very low intensity wings. In addition to the synchronous spatial characterization, a temporal analysis at any given point in the beam cross section is carried out. Using this method, the beam homogeneity and spatial shape, energy density, energy center, and the defects-related spectrum can also be extracted from these high-resolution pictures. PMID:26133832

  1. N.G. Basov and early works on semiconductor lasers at P.N. Lebedev Physics Institute

    SciTech Connect

    Eliseev, P G

    2012-12-31

    A survey is presented of works on creation and investigation of semiconductor lasers during 1957 - 1977 at the P.N. Lebedev Physics Institute. Many of these works were initiated by N.G. Basov, starting from pre-laser time, when N.G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability. (special issue devoted to the 90th anniversary of n.g. basov)

  2. Wavelength-resonant surface-emitting semiconductor laser

    DOEpatents

    Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

    1989-01-01

    A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

  3. Colorless WDM-PON based on a Fabry-Pérot laser diode and reflective semiconductor optical amplifiers for simultaneous transmission of bidirectional gigabit baseband signals and broadcasting signal.

    PubMed

    Pham, Thang Tien; Kim, Hyun-Seung; Won, Yong-Yuk; Han, Sang-Kook

    2009-09-14

    A novel WDM-PON system delivering bidirectional baseband data and broadcasting data is proposed and demonstrated. A subcarrier multiplexing signal is broadcasted to all users by modulating a broadband optical source based on a Fabry-Pérot laser diode. Reflective semiconductor optical amplifiers are used as colorless modulators for the baseband data at both optical line terminal and remote optical network units. Transmission performance including bit error rate of bidirectional gigabit data and error vector magnitude of broadcasting data of many optical channels is investigated. Additionally, the data rate for the broadcasting signal was improved by using an external modulator.

  4. Laser recrystallization of compound semiconductor films. Final report

    SciTech Connect

    Chu, T.L.; Chu, S.C.; Jiang, C.L.; Lin, S.C.; Stokes, E.D.; Yu, J.M.

    1985-01-01

    Considerable efforts have recently been directed to the research and development of thin polycrystallins film photovoltaic devices from direct gap semiconductors with the objective of producing low cost photovoltaic systems. The conversion efficiencies of thin film devices, in most cases, are considerably lower than those of corresponding single crystalline devices due to the grain boundary effects. Extensive investigations thus far have not developed effective techniques to eliminate the grain boundary effects. The objective of this program is to determine the feasibility of using laser recrystallization for the passivation and reduction of grain boundaries in thin semiconductor films. The recrystallization of thin films of cadmium telluride, gallium arsenide, indium phosphide, and zinc phosphide using a pulsed (5 kHz) Nd:YAG laser has been investigated by scanning a laser beam over the specimen surface with successive overlapping scan lines. At a fixed scan rate, the optimum energy density for the recrystallization of the compound semiconductor films was determined. Electron microprobe analysis and electrical characteristics of Schottky barriers indicated the decomposition of these films during recrystallization. The relative extent of decomposition is related to the dissociation pressure of the semiconductor at its melting point. For example, the dissociation pressure of gallium arsenide is considerably lower than that of indium phosphide. The chemical and structural damages in recrystallized gallium arsenide films can be removed by annealing in an arsine atmosphere while those in recrystallized indium phosphide films cannot. Although the recrystallized films are not directly useful for device purposes, homoepitaxial films of compound semiconductors, such as cadium telluride, deposited on recrystallized films have produced photovoltaic devices with improved characteristics.

  5. High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

    PubMed

    Rudin, B; Wittwer, V J; Maas, D J H C; Hoffmann, M; Sieber, O D; Barbarin, Y; Golling, M; Südmeyer, T; Keller, U

    2010-12-20

    High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser. PMID:21197032

  6. Multiwavelength quantum-dot semiconductor fiber ring laser

    NASA Astrophysics Data System (ADS)

    Lu, Z. G.; Liu, J. R.; Zhang, X. P.; Raymond, S.; Poole, P. J.; Barrios, P. J.; Poitras, D.; Haffouz, S.; Wasilewski, Z.; Pakulski, G.

    2008-11-01

    We have demonstrated a novel approach to achieve a stable multi-wavelength laser system (MWLS) which is making use of a quantum dot semiconductor optical amplifier (QD SOA) as a highly birefringence material and an optical polarizer at the same time. Both the channel frequency spacing and the central lasing wavelength of the QD MWLS can be accurately set by using the desired-designed QD SOA with the certain operation conditions and by setting the polarization controller properly. The detailed working principles and the experimental results have been reported in this paper. The proposed QD MWLS technology can be used for characterizing the intrinsic properties of the QD semiconductor waveguide materials that could also be used for spectral narrowing of a laser system. We have experimentally confirmed that the QD SOA is highly inhomogeneous gain material as compared with QW SOA.

  7. [A clinical observation of pericoronitis treatment with pulse semiconductor laser].

    PubMed

    Lu, Shan; Fang, Yuan

    2004-08-01

    In order to valuate the effect of pericoronitis treated with pulse semiconductor laser. As a treatment group, 24 ones drawn ramdomly from 48 cases of pericoronitis were given periodontal radiation, point-radiation therapy and pharmacotherapy as well. While another 24 cases as a contrast group were given pharmacotherapy only. On the 3rd day and the 5th day the degree of pain and restriction of mouth opening of the two groups were graded, contrasted and processed by Ridit statistics. Result, The therapy group gained more notable effect in pain-relieving and mouth-opening-improving than the contrast group. Because of no damage, handy and can be done easily, be definite in curative effect, Pulse semiconductor laser treatment pericoronitis deserves popularizing.

  8. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  9. Femtosecond laser color marking of metal and semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Ionin, Andrey A.; Kudryashov, Sergey I.; Makarov, Sergey V.; Seleznev, Leonid V.; Sinitsyn, Dmitry V.; Golosov, Evgeniy V.; Golosova, Ol'ga A.; Kolobov, Yuriy R.; Ligachev, Alexander E.

    2012-05-01

    Color marking of rough or smooth metal (Al, Cu, Ti) and semiconductor (Si) surfaces was realized via femtosecond laser fabrication of periodic surface nanorelief, representing one-dimensional diffraction gratings. Bright colors of the surface nanorelief, especially for longer electromagnetic wavelengths, were provided during marking through pre-determined variation of the laser incidence angle and the resulting change of the diffraction grating period. This coloration technique was demonstrated for the case of silicon and various metals to mark surfaces in any individual color with a controllable brightness level and almost without their accompanying chemical surface modification.

  10. High density semiconductor nanodots by direct laser fabrication

    NASA Astrophysics Data System (ADS)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

  11. Grating-tuned semiconductor MOPA lasers for precision spectroscopy

    SciTech Connect

    Marquardt, J.H.; Cruz, F.C.; Stephens, M.; Oates, C.W.; Hollberg, L.W.; Bergquist, J.C.; Welch, D.F.; Mehuys, D.; Sanders, S.

    1996-12-31

    A standard grating-tuned extended-cavity diode laser is used for injection seeding of a tapered semiconductor laser/amplifier. With sufficient injection power the output of the amplifier takes on the spectral characteristics of the master laser. The authors have constructed master-oscillator power-amplifier (MOPA) systems that operate near 657 nm, 675 nm, 795 nm, and 850 nm. Although the characteristics vary from system to system, the authors have demonstrated output powers of greater than 700 mW in a single spatial mode, linewidths less than 1 kHz, coarse tuning greater than 20 nm, and continuous single-frequency scanning greater than 150 GHz. The authors discuss the spectroscopic applications of these high power, highly coherent, tunable diode lasers as applied to Ca, Hg{sup +}, I{sub 2}, and two-photon transitions in Cs.

  12. Influence of external optical feedback on the alpha factor of semiconductor lasers.

    PubMed

    Yu, Yanguang; Xi, Jiangtao

    2013-06-01

    This Letter presents the results revealing the influence of external optical feedback (EOF) on the alpha factor, or the linewidth enhancement factor, of semiconductor lasers operating on single mode. First, a method is proposed for the measurement of the alpha over a wide range of optical feedback level, which provides an effective way for investigating the dependence of the alpha on laser operating conditions. Second, experimental investigation based on the proposed method is performed on a GaAlAs laser diode with a multiquantum well structure. It is discovered that the alpha value remains approximately constant with increasing injection current, but has a strong dependence on EOF.

  13. Tunable semiconductor laser with an acousto-optic filter in an external fibre cavity

    SciTech Connect

    Andreeva, E V; Mamedov, D S; Ruenkov, A A; Shramenko, M V; Magdich, L N; Yakubovich, S D

    2006-04-30

    A tunable semiconductor laser with a laser amplifier based on a double-pass superluminescent diode as an active element and an acousto-optic filter in an external fibre cavity as a selective element is investigated. A continuous spectral tuning is achieved in a band of width 60 nm centered at a wavelength of 845 nm and the 'instant' linewidth below 0.05 nm is obtained. The sweep frequency within the tuning range achieves 200 Hz. The cw power at the output of a single-mode fibre was automatically maintained constant at the level up to 1.5 mW. (lasers and amplifiers)

  14. rf-microwave switches based on reversible semiconductor-metal transition of VO2 thin films synthesized by pulsed-laser deposition

    NASA Astrophysics Data System (ADS)

    Dumas-Bouchiat, F.; Champeaux, C.; Catherinot, A.; Crunteanu, A.; Blondy, P.

    2007-11-01

    Microwave switching devices based on the semiconductor-metal transition of VO2 thin films were developped on two types of substrates (C-plane sapphire and SiO2/Si), and in both shunt and series configurations. Under thermal activation, the switches achieved up to 30-40dB average isolation of the radio-frequency (rf) signal on 500MHz -35GHz frequency band with weak insertion losses. These VO2-based switches can be electrically activated with commutation times less than 100ns, which make them promising candidates for realizing efficient and simple rf switches.

  15. Ultrashort pulse laser slicing of semiconductor crystal

    NASA Astrophysics Data System (ADS)

    Kim, Eunho; Shimotsuma, Yasuhiko; Sakakura, Masaaki; Miura, Kiyotaka

    2016-07-01

    Meanwhile, by the convention wire-saw technique, it is difficult to slice off a thin wafer from bulk SiC crystal without the reserving space for cutting. In this study, we have achieved exfoliation of 4H-SiC single crystal by femtosecond laser induced slicing method. By using this, the exfoliated surface with the root-mean-square roughness of 3 μm and the cutting-loss thickness smaller than 30 μm was successfully demonstrated. We have also observed the nanostructure on the exfoliated surface in SiC crystal.

  16. Estimation of Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

    NASA Technical Reports Server (NTRS)

    Numata, Kenji; Camp, Jordan

    2012-01-01

    We evaluate mechanical thermal noise in semiconductor lasers, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Our simple model determines an underlying fundamental limit for the frequency noise of free-running semiconductor laser, and provides a framework: where the noise may be potentially reduced with improved design.

  17. External-cavity semiconductor laser with focusing grating mirror

    SciTech Connect

    Asakura, H.; Hori, Y.; Sogawa, F.; Kato, M.; Serizawa, H. )

    1990-10-01

    An external-cavity semiconductor laser with a focusing grating mirror (FGM), which enables a single-mode oscillation at a specified wavelength, is proposed. The optical properties of the FGM, which is a computer-generated holographic grating with chirp and bend structure, are numerically analyzed. The FGM is found to serve the functions of an optical feedback grating mirror, a focusing lens, and a narrow bandwidth wavelength filter, and its applicability towards a lensless external-cavity laser is clarified. An optimally-designed FGM for realizing laser oscillation at a specific wavelength of 1.30 {mu}m is fabricated by using a computer-controlled electron-beam writing system. The fabricated FGM with grating area of 1 {times} 1 mm{sup 2} is combined as an external feedback mirror with an InGaAsP-InP semiconductor laser of 1.3 {mu}m wavelength range, and the lasing characteristics are experimentally measured. Stable and single-mode oscillations with spectral line width less than 10 MHz, side-mode suppression ratio of 30 dB, and without low- and high-frequency intensity noise have been successfully realized at nearly the specifically designed wavelength.

  18. The influence of gain nonlinearities on distortion in semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Lysak, Vladimir V.; Schatz, Richard; Shulika, Aleksey V.; Sukhoivanov, Igor A.; Kjebon, O.

    2004-09-01

    The semiconductor laser is commonly used as a light source in fiber-optical telecommunication systems. In order to send as much information as possible in a short time, it is important that the laser has a large modulation bandwidth, i.e., the turn-on and turn-off time should be as short as possible. In analogue fiber optic systems for transmission of radio or television signals, it is also important that the light from the laser increases linearly with driving current even at high modulation frequencies. Otherwise, the transmitted signal will become distorted. The modulation bandwidth and the modulation distortion are dependent both on the laser structure and the gain characteristics of the active material. One of the most useful approaches for the time-domain description of the response of optoelectronic devices is the so-called "rate equation model," which has been widely used to describe laser performance. Commonly, laser models with simple gain expressions are used for simulation of laser dynamics. In these models the small-signal dynamic parameters like the differential gain and gain saturation parameter are extracted from modulation response measurements. However, we show that in order to correctly calculate distortion, an accurate model of the dependence of gain on carrier density, n, and photon density, s, is needed. Commonly used gain models, fitted to give exactly the same modulation response can give significantly different distortion behavior.

  19. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1987-01-01

    A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

  20. Optical communication with semiconductor laser diodes

    NASA Technical Reports Server (NTRS)

    Davidson, F.

    1988-01-01

    Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

  1. Nonlinear semiconductor lasers and amplifiers for all-optical information processing.

    PubMed

    Adams, M J; Hurtado, A; Labukhin, D; Henning, I D

    2010-09-01

    The nonlinear properties of semiconductor lasers and laser amplifiers when subject to optical injection are reviewed and new results are presented for multisection lasers, vertical cavity semiconductor optical amplifiers, and surface-emitting lasers. The main underlying material parameters are outlined and the key design approaches are discussed for both edge-emitting and vertical cavity devices. An overview of theoretical modeling approaches is discussed and a summary of key experimental results is presented. The practical use of optically injected edge-emitting and vertical cavity semiconductor lasers and laser amplifiers is illustrated with examples of applications including, among others, optical logic and chaotic communication.

  2. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    NASA Astrophysics Data System (ADS)

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-07-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems.

  3. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation

    PubMed Central

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  4. Hybrid integration of III-V semiconductor lasers on silicon waveguides using optofluidic microbubble manipulation.

    PubMed

    Jung, Youngho; Shim, Jaeho; Kwon, Kyungmook; You, Jong-Bum; Choi, Kyunghan; Yu, Kyoungsik

    2016-01-01

    Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor block trapped on the microbubble surface can be precisely assembled on a desired position using photothermocapillary convective flows induced by focused laser beam illumination. Strong light absorption within the micro-scale compound semiconductor object allows real-time and on-demand microbubble generation. After the assembly process, we verify that electromagnetic radiation from the optically-pumped InGaAsP microdisk laser can be efficiently coupled to the single-mode silicon waveguide through vertical evanescent coupling. Our simple and accurate microbubble-based manipulation technique may provide a new pathway for realizing high precision fluidic assembly schemes for heterogeneously integrated photonic/electronic platforms as well as microelectromechanical systems. PMID:27431769

  5. Epitaxial Electronic Oxides on Semiconductors Using Pulsed-Laser Deposition

    SciTech Connect

    Norton, D.P.; Budai, J.D.; Chisholm, M.F.

    1999-12-01

    We describe the growth and properties of epitaxial (OO1) CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method. Hydrogen gas is introduced during film growth to eliminate the presence of the GeOs from the semiconductor surface during the initial nucleation of the metal oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria. the metal oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. Preliminary structural and electrical properties are reported.

  6. Spectral filtering effects in synchronized semiconductor laser networks

    NASA Astrophysics Data System (ADS)

    Argyris, Apostolos; Bourmpos, Michail; Syvridis, Dimitris

    2016-03-01

    Bidirectional coupling of semiconductor lasers (SLs) through optical injection is a well established method to generate chaotic signals which, through their dynamics, may give rise to several applications from sensing to monitoring and from communication to security. Recent works have shown the capability of joint behavior or complete synchrony of mutually coupled networks of SLs. In these works, the coupling architecture, the operational conditions and the properties of the active elements determine the types of dynamics of the emitted optical signals, through which the network can potentially be synchronized. In this experimental work, a network of mutually coupled semiconductor lasers has been synchronized through chaotic optical signals that spectrally extend over 10GHz. The synchronization among the lasers that participate in the coupled network is affected, besides the structural and operational conditions, by the signals' bandwidth that circulates optically. Here we show that the synchronization performance of the detected signals when monitoring the network nodes through optoelectronic conversion is in direct dependence on the signal bandwidth. Smaller signal bandwidth at the GHz range may result in synchronization with cross-correlation values over 0.97 in most of the SL nodes, rejecting higher frequencies that are not optimally synchronized. Another source of improving the synchronization of the network that has been recorded in this experimental setup is by harnessing the de-synchronization events that are almost always apparent, especially when emitted signals include power dropouts.

  7. High-speed modelocked semiconductor lasers and applications in coherent photonic systems

    NASA Astrophysics Data System (ADS)

    Lee, Wangkuen

    1.55-mum high-speed modelocked semiconductor lasers are theoretically and experimentally studied for various coherent photonic system applications. The modelocked semiconductor lasers (MSLs) are designed with high-speed (>5 GHz) external cavity configurations utilizing monolithic two-section curved semiconductor optical amplifiers. By exploiting the saturable absorber section of the monolithic device, passive or hybrid mode-locking techniques are used to generate short optical pulses with broadband optical frequency combs. Laser frequency stability is improved by applying the Pound-Drever-Hall (PDH) frequency stabilization technique to the MSLs. The improved laser performance after the frequency stabilization (a frequency drifting of less than 350 MHz), is extensively studied with respect to the laser linewidth (˜ 3 MHz), the relative intensity noise (RIN) (< -150 dB/Hz), as well as the modal RIN (˜ 3 dB reduction). MSL to MSL, and tunable laser to MSL synchronization is demonstrated by using a dual-mode injection technique and a modulation sideband injection technique, respectively. Dynamic locking behavior and locking bandwidth are experimentally and theoretically studied. Stable laser synchronization between two MSLs is demonstrated with an injection seed power on the order of a few microwatt. Several coherent heterodyne detections based on the synchronized MSL systems are demonstrated for applications in microwave photonic links and ultra-dense wavelength division multiplexing (UD-WDM) system. In addition, efficient coherent homodyne balanced receivers based on synchronized MSLs are developed and demonstrated for a spectrally phase-encoded optical CDMA (SPE-OCDMA) system.

  8. Fast photonic information processing using semiconductor lasers with delayed optical feedback: role of phase dynamics.

    PubMed

    Nguimdo, Romain Modeste; Verschaffelt, Guy; Danckaert, Jan; Van der Sande, Guy

    2014-04-01

    Semiconductor lasers subject to delayed optical feedback have recently shown great potential in solving computationally hard tasks. By optically implementing a neuro-inspired computational scheme, called reservoir computing, based on the transient response to optical data injection, high processing speeds have been demonstrated. While previous efforts have focused on signal bandwidths limited by the semiconductor laser's relaxation oscillation frequency, we demonstrate numerically that the much faster phase response makes significantly higher processing speeds attainable. Moreover, this also leads to shorter external cavity lengths facilitating future on-chip implementations. We numerically benchmark our system on a chaotic time-series prediction task considering two different feedback configurations. The results show that a prediction error below 4% can be obtained when the data is processed at 0.25 GSamples/s. In addition, our insight into the phase dynamics of optical injection in a semiconductor laser also provides a clear understanding of the system performance at different pump current levels, even below solitary laser threshold. Considering spontaneous emission noise and noise in the readout layer, we obtain good prediction performance at fast processing speeds for realistic values of the noise strength.

  9. Asymmetric laser sideband generation with a tapered semiconductor amplifier

    NASA Astrophysics Data System (ADS)

    Yanakas, Michael; Lim, Michael

    2013-03-01

    We have constructed a free-space, frequency-shifted feedback amplifier using a tapered semiconductor gain element. The general layout of the system is similar to that described in Littler, et al., Opt. Comm. 88, 523 (1992). Traveling-wave feedback is demonstrated with the m = - 1 order of several different acousto-optic modulators driven at variable frequency. Asymmetric sideband production is observed in the rf spectrum of a fast photodiode and in the transmission of a scanning Fabry-Perot interferometer. The number of asymmetric modes is controlled with the AOM rf drive power and the seed laser optical power. Supported by NSF PHY-0613659

  10. An electrically injected rolled-up semiconductor tube laser

    SciTech Connect

    Dastjerdi, M. H. T.; Djavid, M.; Mi, Z.

    2015-01-12

    We have demonstrated electrically injected rolled-up semiconductor tube lasers, which are formed when a coherently strained InGaAs/InGaAsP quantum well heterostructure is selectively released from the underlying InP substrate. The device exhibits strong coherent emission in the wavelength range of ∼1.5 μm. A lasing threshold of ∼1.05 mA is measured for a rolled-up tube with a diameter of ∼5 μm and wall thickness of ∼140 nm at 80 K. The Purcell factor is estimated to be ∼4.3.

  11. Gain saturation in semiconductor lasers - Theory and experiment

    NASA Technical Reports Server (NTRS)

    Kasemset, D.; Fonstad, C. G., Jr.

    1982-01-01

    The semiconductor stimulated gain saturation model of Zee has been extended using reasonable approximations to obtain an analytical solution for the gain saturation process in PbSnTe and to determine the limit to single mode power directly from the gain expression, the intraband relaxation time, and device and material parameters. The theoretical results are compared with experimental observations for single transverse mode cavity narrow stripe buried heterostructure PbSnTe lasers. Those results are interpreted in terms of an intraband relaxation time on the order of 2 x 10 to the -12th s in the temperature range 20-80 K.

  12. Slow axis collimation lens with variable curvature radius for semiconductor laser bars

    NASA Astrophysics Data System (ADS)

    Xiong, Ling-Ling; Cai, Lei; Zheng, Yan-Fang; Liu, Hui; Zhang, Pu; Nie, Zhi-Qiang; Liu, Xing-Sheng

    2016-03-01

    Based on Snell's law and the constant phase in the front of optical field, a design method of the slow axis collimation lens with variable curvature radius is proposed for semiconductor laser bars. Variable radius of the collimator is designed by the transmission angle, and it is demonstrated that the collimator has good beam collimation ability by material with low refractive index. Resorting to the design thought of finite element method, the surface of the collimator has been divided, and it is feasible to be fabricated. This method is applied as an example in collimation of a 976 nm semiconductor laser bar. 6 mrad divergence angle of collimated beam at slow axis is realized by the designed collimation lens with refraction index of 1.51.

  13. Linearly chirped microwave waveform generation with large time-bandwidth product by optically injected semiconductor laser.

    PubMed

    Zhou, Pei; Zhang, Fangzheng; Guo, Qingshui; Pan, Shilong

    2016-08-01

    A scheme for photonic generation of linearly chirped microwave waveforms (LCMWs) with a large time-bandwidth product (TBWP) is proposed and demonstrated based on an optically injected semiconductor laser. In the proposed system, the optically injected semiconductor laser is operated in period-one (P1) oscillation state. After optical-to-electrical conversion, a microwave signal can be generated with its frequency determined by the injection strength. By properly controlling the injection strength, an LCMW with a large TBWP can be generated. The proposed system has a simple and compact structure. Besides, the center frequency, bandwidth, as well as the temporal duration of the generated LCMWs can be easily adjusted. An experiment is carried out. LCMWs with TBWPs as large as 1.2x105 (bandwidth 12 GHz; temporal duration 10 μs) are successfully generated. The flexibility for tuning the center frequency, bandwidth and temporal duration is also demonstrated. PMID:27505809

  14. Imaging of free carriers in semiconductors via optical feedback in terahertz quantum cascade lasers

    SciTech Connect

    Mezzapesa, F. P. Brambilla, M.; Dabbicco, M.; Scamarcio, G.; Columbo, L. L.; Vitiello, M. S.

    2014-01-27

    To monitor the density of photo-generated charge carriers on a semiconductor surface, we demonstrate a detectorless imaging system based on the analysis of the optical feedback in terahertz quantum cascade lasers. Photo-excited free electron carriers are created in high resistivity n-type silicon wafers via low power (≅40 mW/cm{sup 2}) continuous wave pump laser in the near infrared spectral range. A spatial light modulator allows to directly reconfigure and control the photo-patterned intensity and the associated free-carrier density distribution. The experimental results are in good agreement with the numerical simulations.

  15. High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.

    PubMed

    Härkönen, Antti; Rautiainen, Jussi; Guina, Mircea; Konttinen, Janne; Tuomisto, Pietari; Orsila, Lasse; Pessa, Markus; Okhotnikov, Oleg G

    2007-03-19

    We report on an optically-pumped intracavity frequency doubled GaInNAs/GaAs -based semiconductor disk laser emitting around 615 nm. The laser operates at fundamental wavelength of 1230 nm and incorporates a BBO crystal for light conversion to the red wavelength. Maximum output power of 172 mW at 615 nm was achieved from a single output. Combined power from two outputs was 320 mW. The wavelength of visible emission could be tuned by 4.5 nm using a thin glass etalon inside the cavity.

  16. Modeling and Simulation of Semiconductor Quantum Well Structures and Lasers

    NASA Technical Reports Server (NTRS)

    Ning, Cun-Zheng; Saini, Subbash (Technical Monitor)

    1998-01-01

    In this talk I will cover two aspects of modeling and simulation efforts at NASA Ames Research Center. In the quantum well structure simulation, we typically start from the quantum mechanical calculation of the quantum well structures for the confined/and unconfined eigen states and functions. A bandstructure calculation of the k*p type is then performed for the confined valence states. This information is then used to computer the optical gain and refractive index of the quantum well structures by solving the linearized multiband semiconductor Bloch equations with the many-body interactions included. In our laser simulation, we typically solve the envelope equations for the laser field in space-time domain, coupled with a reduced set of material equations using the microscopic calculation of the first step. Finally I will show some examples of both aspects of simulation and modeling.

  17. Experimental examinations of semiconductor laser amplifiers for optical communication technology

    NASA Astrophysics Data System (ADS)

    Ludwig, Reinhold

    1993-01-01

    Properties of SLA (Semiconductor Laser Amplifier), which are particularly interesting for application to linear repeaters in coherent multichannel systems, are studied and design rules for future optimized amplifier structure are deduced. Laser diode antireflection was examined and reflection factor was measured. Low signal properties were discussed considering injection current, wavelengths, temperature and polarization. The coupling between amplifiers and glass fibers was examined. The utilization of cascade amplifiers as linear repeaters in multichannel heterodyne systems and television distribution systems was investigatied. The following results are obtained: measurement and calculation of the paradiaphony between two signals radiated in a SLA; multichannel data transfer through a SLA; polarization independent amplification with SLA configurations; measurement of the frequency dependence of four wave mixing sidelines in a SLA; measurement of the system degradation through echoes in a bidirectional SLA chain; data transmission with frequency conversion and calculation of multichannel transmission systems with cascade SLA, taking into account saturation, signal to noise ratio, bandwidth reduction and echo.

  18. IV-VI semiconductor lasers for gas phase biomarker detection

    NASA Astrophysics Data System (ADS)

    McCann, Patrick; Namjou, Khosrow; Roller, Chad; McMillen, Gina; Kamat, Pratyuma

    2007-09-01

    A promising absorption spectroscopy application for mid-IR lasers is exhaled breath analysis where sensitive, selective, and speedy measurement of small gas phase biomarker molecules can be used to diagnose disease and monitor therapies. Many molecules such as nitric oxide, ethane, formaldehyde, acetaldehyde, acetone, carbonyl sulfide, and carbon disulfide have been connected to diseases or conditions such as asthma, oxidative stress, breast cancer, lung cancer, diabetes, organ transplant rejection, and schizophrenia. Measuring these and other, yet to be discovered, biomarker molecules in exhaled breath with mid-IR lasers offers great potential for improving health care since such tests are non-invasive, real-time, and do not require expensive consumables or chemical reagents. Motivated by these potential benefits, mid-IR laser spectrometers equipped with presently available cryogenically-cooled IV-VI lasers mounted in compact Stirling coolers have been developed for clinical research applications. This paper will begin with a description of the development of mid-IR laser instruments and their use in the largest known exhaled breath clinical study ever performed. It will then shift to a description of recent work on the development of new IV-VI semiconductor quantum well materials and laser fabrication methods that offer the promise of low power consumption (i.e. efficient) continuous wave emission at room temperature. Taken together, the demonstration of compelling clinical applications with large market opportunities and the clear identification of a viable pathway to develop low cost mid-IR laser instrumentation can create a renewed focus for future research and development efforts within the mid-IR materials and devices area.

  19. Optical Biosensors Based on Semiconductor Nanostructures

    PubMed Central

    Martín-Palma, Raúl J.; Manso, Miguel; Torres-Costa, Vicente

    2009-01-01

    The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented. PMID:22346691

  20. From Dye Laser Factory to Portable Semiconductor Laser: Four Generations of Sodium Guide Star Lasers for Adaptive Optics in Astronomy and Space Situational Awareness

    NASA Astrophysics Data System (ADS)

    d'Orgeville, C.; Fetzer, G.

    This presentation recalls the history of sodium guide star laser systems used in astronomy and space situational awareness adaptive optics, analysing the impact that sodium laser technology evolution has had on routine telescope operations. While it would not be practical to describe every single sodium guide star laser system developed to date, it is possible to characterize their evolution in broad technology terms. The first generation of sodium lasers used dye laser technology to create the first sodium laser guide stars in Hawaii, California, and Spain in the late 1980's and 1990's. These experimental systems were turned into the first laser guide star facilities to equip medium-to-large diameter adaptive optics telescopes, opening a new era of LGS AO-enabled diffraction-limited imaging from the ground. Although they produced exciting scientific results, these laser guide star facilities were large, power-hungry and messy. In the USA, a second-generation of sodium lasers was developed in the 2000's that used cleaner, yet still large and complex, solid-state laser technology. These are the systems in routine operation at the 8-10m class astronomical telescopes and 4m-class satellite imaging facilities today. Meanwhile in Europe, a third generation of sodium lasers was being developed using inherently compact and efficient fiber laser technology, and resulting in the only commercially available sodium guide star laser system to date. Fiber-based sodium lasers will be deployed at two astronomical telescopes and at least one space debris tracking station this year. Although highly promising, these systems remain significantly expensive and they have yet to demonstrate high performance in the field. We are proposing to develop a fourth generation of sodium lasers: based on semiconductor technology, these lasers could provide the final solution to the problem of sodium laser guide star adaptive optics for all astronomy and space situational awareness applications.

  1. Photoconductive semiconductor switches: Laser Q-switch trigger and switch-trigger laser integration

    SciTech Connect

    Loubriel, G.M.; Mar, A.; Hamil, R.A.; Zutavern, F.J.; Helgeson, W.D.

    1997-12-01

    This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in January of 1997 and concluded in September of 1997. The over-arching goal of this LDRD is to study whether laser diode triggered photoconductive semiconductor switches (PCSS) can be used to activate electro-optic devices such as Q-switches and Pockels cells and to study possible laser diode/switch integration. The PCSS switches we used were high gain GaAs switches because they can be triggered with small amounts of laser light. The specific goals of the LDRD were to demonstrate: (1) that small laser diode arrays that are potential candidates for laser-switch integration will indeed trigger the PCSS switch, and (2) that high gain GaAs switches can be used to trigger optical Q-switches in lasers such as the lasers to be used in the X-1 Advanced Radiation Source and the laser used for direct optical initiation (DOI) of explosives. The technology developed with this LDRD is now the prime candidate for triggering the Q switch in the multiple lasers in the laser trigger system of the X-1 Advanced Radiation Source and may be utilized in other accelerators. As part of the LDRD we developed a commercial supplier. To study laser/switch integration we tested triggering the high gain GaAs switches with: edge emitting laser diodes, vertical cavity surface emitting lasers (VCSELs), and transverse junction stripe (TJS) lasers. The first two types of lasers (edge emitting and VCSELs) did activate the PCSS but are harder to integrate with the PCSS for a compact package. The US lasers, while easier to integrate with the switch, did not trigger the PCSS at the US laser power levels we used. The PCSS was used to activate the Q-switch of the compact laser to be used in the X-1 Advanced Radiation Source.

  2. Period-control and chaos-anti-control of a semiconductor laser using the twisted fiber

    NASA Astrophysics Data System (ADS)

    Yan, Sen-Lin

    2016-09-01

    A novel semiconductor laser system is presented based on a twisted fiber. To study the period-control and chaos-anti-control of the laser system, we design a type of optic path as a control setup using the combination of the twisted fiber and the polarization controller while we present a physical dynamics model of the delayed dual-feedback laser containing the twisted fiber effect. We give an analysis of the effect of the twisted fiber on the laser. We use the effects of the delayed phase and the rotation angle of the twisted fiber and the characteristics of the system to achieve control of the laser. The laser is deduced to a stable state, a double-periodic state, a period-6 state, a period-8 state, a period-9 state, a multi-period state, beat phenomenon, and so on. The periodic laser can be anti-controlled to chaos. Some chaos-anti-control area is found. The laser system is very useful for the study of chaos-control of the laser setup and the applications of some physics effects.

  3. Nano-cones Formed on a Surface of Semiconductors by Laser Radiation: Technology, Model and Properties

    NASA Astrophysics Data System (ADS)

    Medvid', A.; Onufrijevs, P.

    2011-12-01

    The new laser method for nanostructures formation on a surface of semiconductors Si, Ge, GaAs and SiGe, CdZnTe solid solutions is proposed. For the first time was shown the possibility of graded band gap structure formation in elementary semiconductors. Thermogradient effect has a main role in initial stage of nano-cones and graded band gap structure formation by laser radiation in semiconductors.

  4. Significant intensity noise suppression of single-frequency fiber laser via cascading semiconductor optical amplifier

    NASA Astrophysics Data System (ADS)

    Feng, Zhouming; Li, Can; Xu, Shanhui; Huang, Xiang; Yang, Changsheng; Zhou, Kaijun; Gan, Jiulin; Deng, Huaqiu; Yang, Zhongmin

    2015-09-01

    Significant suppression of the intensity noise of single-frequency fiber laser is demonstrated with a cascading semiconductor optical amplifier (SOA). Based on the nonlinear amplification dynamics of the SOA, intensity noise reduction would take place in every transmission of the laser signal. By cascading two SOAs, a maximum noise suppression of 30 dB at around the resonant relaxation oscillation (RRO) frequency as well as a suppression bandwidth of up to 50 MHz is realized. Moreover, the RRO peak is restricted to a significant narrow frequency band, outside of which the laser noise approaches the noise floor of the measurement. The remarkable amplified spontaneous emission (ASE) introduced by the SOA is entirely filtered out with a fiber Bragg grating (FBG). Furthermore, no noticeable degradation of laser frequency noise has been observed.

  5. Determination of nanovibration amplitudes using frequency-modulated semiconductor laser autodyne

    SciTech Connect

    Usanov, D A; Skripal, A V; Astakhov, E I

    2014-02-28

    The method for measuring nanovibration amplitudes using the autodyne signal of a semiconductor laser at several laser radiation wavelengths is described. The theoretical description of the frequency-modulated autodyne signal under harmonic vibrations of the reflector is presented and the relations for its spectral components are derived using the expansions into the Fourier and Bessel series. The results of numerical modelling based on the proposed method for measuring the reflector nanovibration amplitudes are presented that make use of the low-frequency spectrum of the autodyne signal from the frequency-modulated laser autodyne and the solution of the appropriate inverse problem. The experimental setup is described; the results of the measurements are presented for the nanovibration amplitudes and the autodyne signal spectra under the reflector nanovibrations. (laser applications and other topics in quantum electronics)

  6. Antiphase dynamics in multimode semiconductor lasers with optical feedback

    SciTech Connect

    Masoller, C.; Torre, M. S.; Mandel, Paul

    2005-01-01

    We study the dynamics of multimode semiconductor lasers with optical feedback. Our model takes into account explicitly spatial effects, which are included by considering spatial profiles for N longitudinal modes coupled to the space-dependent gain. We also consider the effect of carrier diffusion. We find that in the weak feedback regime the longitudinal modes display antiphase oscillations that lead to a nearly constant output intensity. This result is largely independent of the value of the diffusion coefficient. For larger feedback we observe in-phase fast oscillations at a frequency close to the relaxation oscillation frequency of the solitary laser. In these two regimes, the total output of the laser has the properties of a single-mode laser for nondispersive applications. We assess the validity of an existing approximation scheme that has dealt with spatial inhomogeneities by expanding the carrier density into a truncated hierarchy of moments. We demonstrate that this approximation is very good when the underlying carrier diffusion is fast, thus leading to a weakly developed carrier grating.

  7. Numerical simulation of a novel all-optical flip-flop based on a chirped nonlinear distributed feedback semiconductor laser structure using GPGPU computing

    NASA Astrophysics Data System (ADS)

    Zoweil, H.

    2015-05-01

    A novel all-optical flip-flop based on a chirped nonlinear distributed feedback laser structure is proposed. The flip-flop does not require a holding beam. The optical gain is provided by a current injection into an active layer. The nonlinear wave-guiding layer consists of a chirped phase shifted grating accompanied with a negative nonlinear refractive index coefficient that increases in magnitude along the wave-guide. In the 'OFF' state, the chirped grating does not provide the required optical feedback to start lasing. An optical pulse switches the device 'ON' by reducing the chirp due to the negative nonlinear refractive index coefficient. The reduced chirp grating provides enough feedback to sustain a laser mode. The device is switched 'OFF' by cross gain modulation. GPGPU computing allows for long simulation time of multiple SET-RESET operations. The 'ON/OFF' transitions delays are in nanoseconds time scale.

  8. Effective observation of treatment of chronic pharyngitis with semiconductor laser irradiation at acupuncture points

    NASA Astrophysics Data System (ADS)

    Li, Suxian; Wang, Xiaoyan; Wang, Yanrong

    1993-03-01

    The treatment of this disease with laser such as He-Ne laser, Nd:YAG laser, and CO2 laser, etc., has been applied in our country, but application of the semiconductor laser therapy has received few reports. It has many advantages, such as ting volume, steady function, simple operation (the patient can operate it by himself), no side effects, remarkable results, and it is very convenient. So the semiconductor laser can be used to treat the chronic pharyngitis with irradiation on acupunctural points. One-hundred-twenty chronic pharyngitis patients were divided into 2 groups, a laser group and a medicine group, 60 cases for each. The effective rate is 91.6% and 66.6%, respectively. Obviously the treatment of chronic pharyngitis with semiconductor laser is valuable for widespread use. The principle of the laser therapy is discussed in the last part of this paper.

  9. Optically induced transport through semiconductor-based molecular electronics

    SciTech Connect

    Li, Guangqi; Seideman, Tamar; Fainberg, Boris D.

    2015-04-21

    A tight binding model is used to investigate photoinduced tunneling current through a molecular bridge coupled to two semiconductor electrodes. A quantum master equation is developed within a non-Markovian theory based on second-order perturbation theory with respect to the molecule-semiconductor electrode coupling. The spectral functions are generated using a one dimensional alternating bond model, and the coupling between the molecule and the electrodes is expressed through a corresponding correlation function. Since the molecular bridge orbitals are inside the bandgap between the conduction and valence bands, charge carrier tunneling is inhibited in the dark. Subject to the dipole interaction with the laser field, virtual molecular states are generated via the absorption and emission of photons, and new tunneling channels open. Interesting phenomena arising from memory are noted. Such a phenomenon could serve as a switch.

  10. High-impedance suppression of pump fluctuation and amplitude squeezing in semiconductor lasers

    SciTech Connect

    Yamamoto, Y.; Machida, S.

    1987-06-15

    The pump amplitude fluctuation of a current-driven semiconductor laser can be suppressed to below the ordinary shot-noise level by ''high-impedance suppression.'' As a result of this pump-fluctuation suppression, the output of a current-driven semiconductor laser exhibits amplitude squeezing in the frequency region below the cavity bandwidth. The noise equivalent circuits and the quantum-mechanical Langevin equations are derived and discussed for clarifying the difference between an ordinary laser oscillator with shot-noise-limited pump fluctuation and a constant-current-driven semiconductor laser.

  11. Dynamics and Synchronization of Semiconductor Lasers for Chaotic Optical Communications

    NASA Astrophysics Data System (ADS)

    Liu, Jia-Ming; Chen, How-Foo; Tang, Shuo

    The objective of this chapter is to provide a complete picture of the nonlinear dynamics and chaos synchronization of single-mode semiconductor lasers for chaotic optical communications. Basic concepts and theoretical framework are reviewed. Experimental results are presented to demonstrate the fundamental concepts. Numerical computations are employed for mapping the dynamical states and for illustrating certain detailed characteristics of the chaotic states. Three different semiconductor laser systems, namely, the optical injection system, the optical feedback system, and the optoelectronic feedback system, that are of most interest for high-bit-rate chaotic optical communications are considered. The optical injection system is a nonautonomous system that follows a period-doubling route to chaos. The optical feedback system is a phase-sensitive delayed-feedback autonomous system for which all three known routes, namely, period-doubling, quasiperiodicity, and intermittency, to chaos can be found. The optical feedback system is a phase-insensitive delayed-feedback autonomous system that follows a quasiperiodicity route to chaotic pulsing. Identical synchronization in unidirectionally coupled configurations is the focus of discussions for chaotic communications. For optical injection and optical feedback systems, the frequency, phase, and amplitude of the optical fields of both transmitter and receiver lasers are all locked in synchronism when complete synchronization is accomplished. For the optoelectronic feedback system, chaos synchronization involves neither the locking of the optical frequency nor the synchronization of the optical phase. For both optical feedback and optoelectronic feedback systems, where the transmitter is configured with a delayed feedback loop, anticipated and retarded synchronization can be observed as the difference between the feedback delay time and the propagation time from the transmitter laser to the receiver laser is varied. For a

  12. Advanced excimer laser technologies enable green semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  13. Cluster Generation Under Pulsed Laser Ablation Of Compound Semiconductors

    SciTech Connect

    Bulgakov, Alexander V.; Evtushenko, Anton B.; Shukhov, Yuri G.; Ozerov, Igor; Marine, Wladimir

    2010-10-08

    A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR- and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn{sub n}O{sub m} and In{sub n}P{sub m} particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In{sub 4}P being a magic cluster. Analysis of the plume composition upon laser exposure has revealed congruent vaporization of ZnO and a disproportionate loss of phosphorus by the irradiated InP surface. Plume expansion conditions under ZnO ablation are shown to be favorable for stoichiometric cluster formation. A delayed vaporization of phosphorus under InP ablation has been observed that results in generation of off-stoichiometric clusters.

  14. Semiconductor laser asymmetry cutting glass with laser induced thermal-crack propagation

    NASA Astrophysics Data System (ADS)

    Zhao, Chunyang; Zhang, Hongzhi; Wang, Yang

    2014-12-01

    Laser induced thermal-crack propagation (LITP) makes the material to produce an uneven temperature field, maximum temperature can't soften or melt the material, induces the thermal stress, then the crack separates along the cutting path. One of the problems in laser asymmetry cutting glass with LITP is the cutting deviation along scanning trajectory. This study lays great emphasis on considering the dynamic extension of crack to explain the reason of the cutting deviation in laser asymmetry cutting glass, includes asymmetric linear cutting and a quarter of a circular curve cutting. This paper indicates the experiments of semiconductor laser asymmetry cutting glass with LITP. Optical microscope photographs of the glass sheet are obtained to examine the cutting deviation. The extended finite element method (XFEM) is used to simulate the dynamic propagation of crack; the crack path does not have to be specified a priori. The cutting deviation mechanism and the crack propagation process are studied by the stress fields using finite element software ABAQUS. This work provides a theoretical basis to investigate the cutting deviation in laser asymmetry cutting glass. In semiconductor laser asymmetry cutting glass, the tensile stress is the basis of crack propagation, then the compressive stress not only makes the crack to extend stably, but also controls the direction of crack propagation.

  15. Photoconductive Semiconductor Switch Technology for Short Pulse Electromagnetics and Lasers

    SciTech Connect

    Denison, Gary J.; Helgeson, Wesley D.; Hjalmarson, Harold P.; Loubriel, Guillermo M.; Mar, Alan; O'Malley, Martin W.; Zutavern, Fred J.

    1999-08-05

    High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electromagnetic pulses foc (1) compact, repetitive accelerators, (2) ultra-wide band impulse sources, (3) precision gas switch triggers, (4) optically-activated firesets, and (5) high power optical pulse generation and control. High power, sub-nanosecond optical pulses are used for active optical sensors such as compact optical radars and range-gated hallistic imaging systems. Following a brief introduction to high gain PCSS and its general applications, this paper will focus on PCSS for optical pulse generation and control. PCSS technology can be employed in three distinct approaches to optical pulse generation and control: (1) short pulse carrier injection to induce gain-switching in semiconductor lasers, (2) electro-optical Q-switching, and (3) optically activated Q-switching. The most significant PCSS issues for these applications are switch rise time, jitter, and longevity. This paper will describe both the requirements of these applications and the most recent results from PCSS technology. Experiments to understand and expand the limitations of high gain PCSS will also be described.

  16. Pulsed laser deposition of organic semiconductor rubrene thin films

    NASA Astrophysics Data System (ADS)

    Grochowska, K.; Majumdar, S.; Laukkanen, P.; Majumdar, H. S.; Sawczak, M.; Śliwiński, G.

    2015-01-01

    Pulsed Laser Deposition (PLD) technique is applied to produce organic semiconductor (OS) rubrene thin film for spintronics applications. The use of organic material for spintronics is motivated by the advantages such as long spin diffusion length due to low spin-orbit and hyperfine coupling1,2, chemical tuning of electronic functionality, easy structural modifications, ability of self-assembly and mechanical flexibility3 etc. However, a major drawback of OS is its low mobility compared to inorganic semiconductors. The PLD growth of rubrene aims on fabricating OS films under more controlled environment to achieve higher crystalline order to improve its mobility and spin coherence length. Among organic materials, rubrene reveals the highest hole mobility - up to 40 cm2/(V•s) and can be exploited in organic light-emitting diodes (OLEDs) or field-effect transistors (OFETs) 4. In this work the rubrene thin films are produced from hardened pellets in vacuum using Nd:YAG pulsed laser operated at 1064 nm, 2 Hz and energy fluence around 0.2 J/cm2. For the reference rubrene samples on SiO2 glass the AFM data reveal continuous 5-7 nm thick films. The amorphous structures are confirmed by XRD measurements and also Raman spectra which show signatures of both tetracene and phenyl bands and a broadband at 1373 cm-1. The obtained results indicate that continuous, defect-free rubrene films can be prepared by means of PLD for investigation of the spin polarization properties of organic-inorganic hybrids. Further studies are on the way to improve crystalline qualities of the rubrene films for less grain boundary related defects and improved mobility and spin diffusion length.

  17. Optimizing electrically pumped vertical extended cavity surface emitting semiconductor lasers (E-VECSELs)

    NASA Astrophysics Data System (ADS)

    McInerney, John G.; Mooradian, Aram

    2011-03-01

    The future evolution of photonics, for a wide spectrum of applications ranging from established optical telecommunications to emerging opportunities such as biotechnology, reprographics and projection displays, will depend on availability of compact, rugged, efficient and inexpensive lasers which deliver high power, good beam quality, excellent wavelength stability, low noise and long lifetime in the near infrared and visible regions. This combination is not readily available from either of the traditional classes of semiconductor laser, edge-emitters and vertical cavity surface emitters (VCSELs). Here we describe a novel class of laser based on geometry similar to VCSELs but controlled by an extended coupled cavity. These devices are scalable to high powers while maintaining fundamental spatial mode performance, a feature that is essential to efficient coupling into a single mode optical fibre or waveguide, or long range propagation in free space. They are also ideally suited to mode locking, gain-switching and intracavity frequency conversion, among other applications.

  18. Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

    SciTech Connect

    Zolotarev, V V; Leshko, A Yu; Pikhtin, N A; Lyutetskiy, A V; Slipchenko, S O; Bakhvalov, K V; Lubyanskiy, Ya V; Rastegaeva, M G; Tarasov, I S

    2014-10-31

    We have studied the spectral characteristics of multimode semiconductor lasers with high-order surface diffraction gratings based on asymmetric separate-confinement heterostructures grown by metalorganic vapour phase epitaxy (λ = 1070 nm). Experimental data demonstrate that, in the temperature range ±50 °C, the laser emission spectrum is ∼5 Å in width and contains a fine structure of longitudinal and transverse modes. A high-order (m = 15) surface diffraction grating is shown to ensure a temperature stability of the lasing spectrum dλ/dT = 0.9 Å K{sup -1} in this temperature range. From analysis of the fine structure of the lasing spectrum, we have evaluated the mode spacing and, thus, experimentally determined the effective length of the Bragg diffraction grating, which was ∼400 μm in our samples. (lasers)

  19. Fundamental Limit of 1/f Frequency Noise in Semiconductor Lasers Due to Mechanical Thermal Noise

    NASA Technical Reports Server (NTRS)

    Numata, K.; Camp, J.

    2011-01-01

    So-called 1/f noise has power spectral density inversely proportional to frequency, and is observed in many physical processes. Single longitudinal-mode semiconductor lasers, used in variety of interferometric sensing applications, as well as coherent communications, exhibit 1/f frequency noise at low frequency (typically below 100kHz). Here we evaluate mechanical thermal noise due to mechanical dissipation in semiconductor laser components and give a plausible explanation for the widely-observed 1/f frequency noise, applying a methodology developed for fixed-spacer cavities for laser frequency stabilization. Semiconductor-laser's short cavity, small beam radius, and lossy components are expected to emphasize thermal-noise-limited frequency noise. Our simple model largely explains the different 1/f noise levels observed in various semiconductor lasers, and provides a framework where the noise may be reduced with proper design.

  20. Improved low-power semiconductor diode lasers for photodynamic therapy in veterinary medicine

    NASA Astrophysics Data System (ADS)

    Lee, Susanne M.; Mueller, Eduard K.; Van de Workeen, Brian C.; Mueller, Otward M.

    2001-05-01

    Cryogenically cooling semiconductor diode lasers provides higher power output, longer device lifetime, and greater monochromaticity. While these effects are well known, such improvements have not been quantified, and thus cryogenically operated semiconductor lasers have not been utilized in photodynamic therapy (PDT). We report quantification of these results from laser power meter and photospectrometer data. The emission wavelengths of these low power multiple quantum well semiconductor lasers were found to decrease and become more monochromatic with decreasing temperature. Significant power output improvements also were obtained at cryogenic temperatures. In addition, the threshold current, i.e. the current at which lasing begins, decreased with decreasing temperature. This lower threshold current combined with the increased power output produced dramatically higher device efficiencies. It is proposed that cryogenic operation of semiconductor diode lasers will reduce the number of devices needed to produce the requisite output for many veterinary and medical applications, permitting significant cost reductions.

  1. Tunable narrow linewidth AlGaInP semiconductor disk laser for Sr atom cooling applications.

    PubMed

    Pabœuf, David; Hastie, Jennifer E

    2016-07-01

    We report a frequency-stabilized semiconductor disk laser based on AlGaInP and operating at 689 nm, a wavelength of interest for atomic clocks based on strontium atoms. With a gain structure designed for emission at around 690 nm, more than 100 mW of output power are generated in single-frequency operation. We show that the source can be tuned over 8 nm with pm precision. By servo-locking the frequency to the side of fringe of a reference cavity, we demonstrate rms frequency noise of 5.2 kHz. PMID:27409180

  2. Tunable narrow linewidth AlGaInP semiconductor disk laser for Sr atom cooling applications.

    PubMed

    Pabœuf, David; Hastie, Jennifer E

    2016-07-01

    We report a frequency-stabilized semiconductor disk laser based on AlGaInP and operating at 689 nm, a wavelength of interest for atomic clocks based on strontium atoms. With a gain structure designed for emission at around 690 nm, more than 100 mW of output power are generated in single-frequency operation. We show that the source can be tuned over 8 nm with pm precision. By servo-locking the frequency to the side of fringe of a reference cavity, we demonstrate rms frequency noise of 5.2 kHz.

  3. Apparatus For Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers Using Vertical Emission

    NASA Technical Reports Server (NTRS)

    Cook, Anthony L. (Inventor); Hendricks, Herbert D. (Inventor)

    2000-01-01

    The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam, provide unobstructed access to laser emission for the formation of the external cavity, and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror or grating.

  4. Semiconductor-doped glass saturable absorbers for near-infrared solid-state lasers

    NASA Astrophysics Data System (ADS)

    Malyarevich, A. M.; Yumashev, K. V.; Lipovskii, A. A.

    2008-04-01

    A survey of results on use of semiconductor-doped glass saturable absorbers for near-infrared passively mode-locked and Q-switched solid-state lasers is presented. Nanosized semiconductor particles (quantum dots) belong to quantum confined systems where motion of an electron and a hole is defined by the finite size of the nanoparticle. Dependence of the excitonic transition energy on the QDs size provides the possibility to tune the absorption of the glasses embedded with such particles to wavelength of specific light source. IV-VI semiconductor QDs (PbS, PbSe) are of interest for IR application due to their narrow band gap and large exciton Bohr radii. These allow for exciton absorption band at the wavelength through 1-3μm. Nonlinear optical properties of PbS, PbSe, and CuxSe nanoparticles embedded in glass matrices necessary for saturable absorber applications are analyzed. It is shown that these materials can be efficiently used for passive mode locking and Q switching of solid-state lasers based on Nd3+, Yb3+, Cr4+, Tm3+, and Ho3+ ions emitting through 1-2.1μm spectral range.

  5. Portable semiconductor laser system to stop internal bleeding

    NASA Astrophysics Data System (ADS)

    Rediker, Robert H.; Durville, Frederic M.; Cho, George; Boll, James H.

    1995-03-01

    One significant cause of death during a sever trauma (gun wound or stab wound) is internal bleeding. A semiconductor diode laser system has been used in in vitro studies of cauterizing veins and arteries to stop bleeding. The conditions of laparoscopic surgery, including bleeding conditions (blood flow and pressure), are simulated. Results have been obtained both with and without using a hemostat (e.g., forceps) to temporarily stop the bleeding prior to the cautery. With the hemostat and a fiber-coupled 810-nm laser, blood vessels of up to 5 mm diameter were cauterized with an 8 W output from the fiber. Great cautions must be used in extrapolating from these in vitro results, since the exact conditions of bleeding in a living being are impossible to exactly reproduce in a laboratory in-vitro experiment. In a living being, when blood flow stops the cessation of nourishment to the vessels results in irreversible physiological changes. Also, the blood itself is different from blood in a living being because an anti-clotting agent (heparin) was added in order to inhibit the blood's natural tendency to coagulate.

  6. Binding Energies of Hydrogen-Like Impurities in a Semiconductor in Intense Terahertz Laser Fields

    NASA Astrophysics Data System (ADS)

    Nie, J. L.; Xu, W.; Lin, L. B.

    We present a detailed theoretical study of the influence of linearly polarized intense terahertz (THz) laser radiation on energy states of hydrogen-like impurities in semiconductors. The dependence of the binding energy for ground (1s) and first excited (2s) states, E1s and E2s, on the intensity and the frequency of the THz radiation has been examined for a GaAs-based system. It is found that E1s, E2s and E2s-E1s decrease with increasing radiation intensity or with decreasing radiation frequency, which implies that an intense THz field can enhance ionization of dopants in semiconductors. Our analytical and numerical results show that one of the most important results obtained by A. L. A. Fonseca et al. [Phys. Stat. Sol. (b) 186, K57 (1994)] is incorrect.

  7. Compact ultrafast semiconductor disk laser for nonlinear imaging in living organisms

    NASA Astrophysics Data System (ADS)

    Aviles-Espinosa, Rodrigo; Filippidis, G.; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo

    2011-03-01

    Ultrashort pulsed laser systems (such as Ti:sapphire) have been used in nonlinear microscopy during the last years. However, its implementation is not straight forward as they are maintenance-intensive, bulky and expensive. These limitations have prevented their wide-spread use for nonlinear imaging, especially in "real-life" biomedical applications. In this work we present the suitability of a compact ultrafast semiconductor disk laser source, with a footprint of 140x240x70 mm, to be used for nonlinear microscopy. The modelocking mechanism of the laser is based on a quantumdot semiconductor saturable absorber mirror (SESAM). The laser delivers an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. Its center wavelength is 965 nm which is ideally suited for two-photon excitation of the widely used Green Fluorescent Protein (GFP) marker as it virtually matches its twophoton action cross section. We reveal that it is possible to obtain two photon excited fluorescence images of GFP labeled neurons and secondharmonic generation images of pharynx and body wall muscles in living C. elegans nematodes. Our results demonstrate that this compact laser is well suited for long-term time-lapse imaging of living samples as very low powers provide a bright signal. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its wide-spread adoption in "real-life" applications.

  8. Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

    PubMed

    Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

    2013-04-01

    In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

  9. Toward High Performance Integrated Semiconductor Micro and Nano Lasers Enabled by Transparent Conducting Materials: from Thick Structure to Thin Film

    NASA Astrophysics Data System (ADS)

    Ou, Fang

    Integrated semiconductor lasers working at the wavelength around 1.3 microm and 1.55 microm are of great interest for the research of photonic integrated circuit (PIC) since they are the crucial components for optical communications and many other applications. To satisfy the requirement of the next generation optical communication and computing systems, integrated semiconductor lasers are expected to have high device performance like very low lasing threshold, high output powers, high speed and possibility of being integrated with electronics. This dissertation focuses on the design and realization of InP based high performance electrically pumped integrated semiconductor lasers. In the dissertation, we first design the tall structure based electrically pumped integrated micro-lasers. Those lasers are capable of giving >10 mW output power with a moderate low threshold current density (0.5--5 kA/cm 2). Besides, a new enhanced radiation loss based coupler design is demonstrated to realize single directional output for curvilinear cavities. Second, the thin film structure based integrated semiconductor laser designs are proposed. Both structures use the side conduction geometry to enable the electrical injection into the thin film laser cavity. The performance enhancement of the thin film structure based lasers is analyzed compared to the tall structure. Third, we investigate the TCO materials. CdO deposited by PLD and In 2O3 deposited by IAD are studied from aspects of their physical, optical and electrical properties. Those materials can give a wide range of tunability in their conductivity (1--5000 S/cm) and optical transparency (loss 200--5000 cm-1), which is of great interest in realizing novel nanophotonic devices. In addition, the electrical contact properties of those materials to InP are also studied. Experiment result shows that both CdO and In2O3 can achieve good ohmic contact to n-InP with contact resistance as low as 10-6O·cm 2. At last, we investigate

  10. Highly efficient neodymium:yttrium aluminum garnet laser end pumped by a semiconductor laser array

    NASA Technical Reports Server (NTRS)

    Sipes, D. L.

    1985-01-01

    In recent experiments, 80-mW CW power in a single mode has been achieved from a neodymium:yttrium aluminum garnet (Nd:YAG) laser with only 1 W of electrical power input to a single semiconductor laser array pump. This corresponds to an overall efficiency of 8 percent, the highest reported CW efficiency for a Nd:YAG laser. A tightly focused semiconductor laser end pump configuration is used to achieve high pumping intensities (on the order of 1 kW/sq cm), which in turn causes the photon to photon conversion efficiency to approach the quantum efficiency (76 percent for Nd:YAG at 1.06 microns pumped at 0.810 micron). This is achieved despite the dual-lobed nature of the pump. Through the use of simple beam-combining schemes (e.g., polarization coupling and multireflection point pumping), output powers over 1 W and overall electrical to optical efficiencies as high as 10 percent are expected.

  11. Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

    PubMed Central

    Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A. Douglas; Choma, Michael A.; Cao, Hui

    2015-01-01

    The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

  12. Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging.

    PubMed

    Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A Douglas; Choma, Michael A; Cao, Hui

    2015-02-01

    The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

  13. High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband.

    PubMed

    Sirbu, Alexei; Rantamäki, Antti; Saarinen, Esa J; Iakovlev, Vladimir; Mereuta, Alexandru; Lyytikäinen, Jari; Caliman, Andrei; Volet, Nicolas; Okhotnikov, Oleg G; Kapon, Eli

    2014-12-01

    We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of gain mirror structure, maximum output power values reach 7.1 W with intracavity diamond gain mirrors and 5.6 W with flip-chip gain mirrors, using a pump spot diameter of 300 µm, exhibiting a beam quality factor M(2)< 1.25 in the full operation range. These results confirm previously published theoretical modeling of these types of SDLs. PMID:25606874

  14. Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration

    NASA Astrophysics Data System (ADS)

    Khurgin, Jacob B.

    2014-06-01

    Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work, we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and CdS and compare them with GaAs. The results indicate that while strong electron-phonon coupling in both GaN and CdS definitely improves the prospects of laser cooling, large phonon energy in GaN may be a limitation, which makes CdS a better prospect for laser cooling.

  15. Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration

    SciTech Connect

    Khurgin, Jacob B.

    2014-06-02

    Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work, we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and CdS and compare them with GaAs. The results indicate that while strong electron-phonon coupling in both GaN and CdS definitely improves the prospects of laser cooling, large phonon energy in GaN may be a limitation, which makes CdS a better prospect for laser cooling.

  16. Millimeter-wave signal generation using an integrated mode-locked semiconductor laser and photodiode

    SciTech Connect

    Vawter, G.A.; Mar, A.; Hietala, V.; Zolper, J.

    1997-02-01

    A compact optoelectronic integrated circuit for generation of mm-wave frequencies is demonstrated. A monolithically integrated semiconductor ring laser, optical amplifier and waveguide photodiode are used to generate electrical signals up to 85.2 GHz.

  17. Frequency-stabilized limit-cycle dynamics of an optically injected semiconductor laser

    NASA Astrophysics Data System (ADS)

    AlMulla, Mohammad; Liu, Jia-Ming

    2014-07-01

    Limit-cycle dynamics are self-sustained oscillations that arise in man-made nonlinear systems and in nature. In an optically injected semiconductor laser, limit-cycle oscillations can reach a frequency ten times the relaxation resonance frequency of the solitary semiconductor laser. To stabilize such oscillations, complicated circuitry is often used. Here, we demonstrate limit-cycle oscillations of inherently stable frequencies. By properly choosing the operating conditions, three distinct types of stable-frequency oscillation points are defined.

  18. Tm,Ho:YLF laser end-pumped by a semiconductor diode laser array

    NASA Technical Reports Server (NTRS)

    Hemmati, Hamid (Inventor)

    1990-01-01

    An Ho:YLF crystal including Tm as sensitizers for the activator Ho, is optically pumped with a semiconductor diode laser array to generate 2.1 micron radiation with a pump power to output power of efficiency as high as 68 percent. The prior-art dual sensitizer system of Er and Tm requires cooling, such as by LN2, but by using Tm alone and decreasing the concentrations of Tm and Ho, and decreasing the length of the laser rod to about 1 cm, it has been demonstrated that laser operation can be obtained from a temperature of 77 K with an efficiency as high as 68 percent up to ambient room temperature with an efficiency at that temperature as high as 9 percent.

  19. Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution.

    PubMed

    Henn, T; Kiessling, T; Ossau, W; Molenkamp, L W; Biermann, K; Santos, P V

    2013-12-01

    We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast "white light" supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

  20. Ultrafast supercontinuum fiber-laser based pump-probe scanning magneto-optical Kerr effect microscope for the investigation of electron spin dynamics in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution

    SciTech Connect

    Henn, T.; Kiessling, T. Ossau, W.; Molenkamp, L. W.; Biermann, K.; Santos, P. V.

    2013-12-15

    We describe a two-color pump-probe scanning magneto-optical Kerr effect microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast “white light” supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.

  1. Irradiation effect of polarization direction and intensity of semiconductor laser on injured peripheral nerve

    NASA Astrophysics Data System (ADS)

    Guo-Xin, Xiong; Lei-lei, Xiong

    2016-08-01

    To investigate the irradiation effect of polarization direction and the intensity of a semiconductor laser on the injured peripheral nerve in rabbits, the model of the injured common peroneal nerve was established, the L5,6 spinal segments of the rabbits were irradiated, a uniform rotating polarizer was placed at the laser output which made the polarization direction and intensity of the output laser change according to the 80 Hz cosine law. The experimental results show that irradiating the spinal segment of injured nerves in rabbits with this changeable semiconductor laser can significantly promote the regeneration of injured peripheral nerves and the function recovery.

  2. Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors

    SciTech Connect

    Heinrich, Martin; Kluska, Sven; Hameiri, Ziv; Hoex, Bram; Aberle, Armin G.

    2013-12-23

    We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes.

  3. What narrow-linewidth semiconductor lasers can do for defense and security?

    NASA Astrophysics Data System (ADS)

    Morin, M.; Ayotte, S.; Latrasse, C.; Aubé, M.; Poulin, M.; Painchaud, Y.; Gagnon, N.; Lafrance, G.

    2010-04-01

    Sensing systems for defense and security operate in evermore demanding environments, increasingly leaving the comfort zone of fiber laser technology. Efficient and rugged laser sources are required that maintain a high level performance under large temperature excursions and sizable vibrations. This paper first presents a sample of defense and security sensing applications requiring laser sources with a narrow emission spectrum. Laser specifications of interest for defense and security sensing applications are reviewed. The effect of the laser frequency noise in interferometric sensing systems is discussed and techniques implemented to reduce phase noise while maintaining the relative intensity noise performance of these sources are reviewed. Developments towards the size reduction of acoustically isolated narrow-linewidth semiconductor lasers are presented. The performance of a narrow-linewidth semiconductor laser subjected to vibrations is characterized. Simulation results of interferometric sensing systems are also presented, taking into account both the intensity and phase noise of the laser.

  4. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  5. Semiconductor laser precision gain switching experiment for Gbaud ternary optical signaling

    SciTech Connect

    O'Dowd, R.F.; Byrne, D.M.

    1989-06-01

    An experiment was carried out to gain switch a 1.3 /mu/m semiconductor laser at gigabit/second rates and with sufficient electrical drive precision to validate a previous theoretical study. The method takes advantage of the relaxation oscillation phenomenon to produce shortened, single, optical pulses by careful control of the electrical bias, drive excursion, and pulse duration. It was demonstrated that two-level and three-level (i.e., ternary) optical data stream generation could be reliably achieved with only two electrical drive levels. The latter was performed by control of the drive pulse duration and is the first demonstration of a three-level PCM system based on two-level gain switching. Furthermore, the pulse shortening which results recommends this technique for optical TDM of multiple laser transmitters. This combination of formats may ultimately allow the 100 Gbit/s target to be achieved.

  6. Techniques for increasing output power from mode-locked semiconductor lasers

    SciTech Connect

    Mar, A.; Vawter, G.A.

    1996-02-01

    Mode-locked semiconductor lasers have drawn considerable attention as compact, reliable, and relatively inexpensive sources of short optical pulses. Advances in the design of such lasers have resulted in vast improvements in pulsewidth and noise performance, at a very wide range of repetition rates. An attractive application for these lasers would be to serve as alternatives for large benchtop laser systems such as dye lasers and solid-state lasers. However, mode-locked semiconductor lasers have not yet approached the performance of such systems in terms of output power. Different techniques for overcoming the problem of low output power from mode-locked semiconductor lasers will be discussed. Flared and arrayed lasers have been used successfully to increase the pulse saturation energy limit by increasing the gain cross section. Further improvements have been achieved by use of the MOPA configuration, which utilizes a flared semiconductor amplifier s amplify pulses to energies of 120 pJ and peak powers of nearly 30W.

  7. Dichotomy of the exciton wave function in semiconductors under intense laser fields

    SciTech Connect

    Lima, F. M. S.; Nunes, O. A. C.; Amato, M. A.; Fonseca, A. L. A.; Silva, E. F. Jr. da

    2008-06-01

    We study the behavior of excitons in a semiconductor irradiated by a monochromatic, linearly polarized, intense laser field. By taking the finiteness of the hole effective mass into account and including the radiation field in a semiclassical manner, we solved the two-body quantum problem in the framework of a nonperturbative theory based upon the Kramers-Henneberger translation transformation for the Schroedinger equation. In the Kramers frame, the rapidly oscillating potential is expanded in a Fourier-Floquet series and, for laser frequencies high enough, only the zeroth-order term survives, the so-called 'laser-dressed' potential. By applying the Ehlotzky's approximation, this potential simplifies to a two-center potential that resembles that for the electronic motion in the H{sub 2}{sup +} molecule ion. The binding energy for an exciton in bulk GaAs under a nonresonant laser field is then computed by following a variational scheme we recently adapted from the linear combination of atomic orbitals-molecular orbitals method for the H{sub 2}{sup +} system. Similarly to the binding energy in H{sub 2}{sup +} in the separated-atoms limit, we found that, instead of vanishing, the exciton binding energy tends to a quarter of the excitonic Rydberg energy with the increase of the laser intensity. We also trace a correlation between this residual binding and the dichotomy of the excitonic wave function in the large dressing parameter limit, which indicates the possibility of excitons becoming stable against ionization.

  8. COMPONENTS OF LASER SYSTEMS AND STABILITY PROBLEMS: Influence of interference coatings on the optical strength of semiconductor laser mirrors

    NASA Astrophysics Data System (ADS)

    Stolyarov, S. N.

    1988-08-01

    Accurate analytic expressions are given and proven for the coefficients of reflection from a coating consisting of an arbitrary number of quarter-wave layers. These are used to show that the amplitude of the field at a "cleaved" mirror in a semiconductor laser decreases appreciably if the refractive indices of the neighboring layers in the interference coating differ substantially. The influence of these coatings on the output power of the laser radiation is studied. An analysis is made of the longitudinal field distribution inside a semiconductor laser and it is established that the true field at the mirrors differs appreciably from the averaged one.

  9. Anticipation in the synchronization of chaotic semiconductor lasers with optical feedback.

    PubMed

    Masoller, C

    2001-03-26

    The synchronization of chaotic semiconductor lasers with optical feedback is studied numerically in a one-way coupling configuration, in which a small amount of the intensity of one laser (master laser) is injected coherently into the other (slave laser). A regime of anticipated synchronization is found, in which the intensity of the slave laser is synchronized to the future chaotic intensity of the master laser. Anticipation is robust to small noise and parameter mismatches, but in this case the synchronization is not complete. It is also shown that anticipated synchronization occurs in coupled time-delay systems, when the coupling has a delay that is less than the delay of the systems.

  10. Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field

    SciTech Connect

    Nunes, O.A.C.

    1985-09-15

    The influence of a strong laser field on the optical absorption edge of a direct-gap magnetic semiconductor is considered. It is shown that as the strong laser intensity increases the absorption coefficient is modified so as to give rise to an absorption tail below the free-field forbidden gap. An application is made for the case of the EuO.

  11. 2-µm Tm:Lu₂O₃ ceramic disk laser intracavity-pumped by a semiconductor disk laser.

    PubMed

    Saarinen, Esa J; Vasileva, Elena; Antipov, Oleg; Penttinen, Jussi-Pekka; Tavast, Miki; Leinonen, Tomi; Okhotnikov, Oleg G

    2013-10-01

    A proof-of-principle study of a 1.97-µm Tm:Lu2O3 ceramic disk laser, intracavity pumped by a 1.2-µm semiconductor disk laser, is presented. The demonstrated concept allows for improved pump absorption and takes advantage of the broad wavelength coverage provided by semiconductor disk laser technology. For thin disk lasers the small thickness of the gain element typically leads to inefficient pump light absorption. This problem is usually solved by using a complex multi-pass pump arrangement. In this study we address this challenge with a new laser concept of an intracavity pumped ceramic thin disk laser. The output power at 1.97 µm was limited to 250 mW due to heat spreader-less mounting scheme of the ceramic gain disk.

  12. Narrow linewidth single-mode semiconductor laser development for coherent detection lidar

    NASA Technical Reports Server (NTRS)

    Mansour, Kamjou; Ksendzov, Alexander; Menzies, Robert T.; Maker, Paul D.; Muller, Richard E.; Manfra, M. J.; Turner, George W.

    2003-01-01

    High power, tunable, single mode, narrow linewidth semiconductor lasers in the 2.05-(micro)m wavelength region are needed to develop semiconductor laser reference oscillators for optical remote sensing from Earth orbit. 2.05-I1/4m narrow linewidth monolithic distributed feedback (DFB) and distributed Bragg reflector (DBR) with the external grating ridge waveguide lasers fabricated from epitaxially grown InGaAs/InGaAsP/InP and in InGaAsSb/AlGaAsSb/GaSb heterostructures are reported.

  13. Oscillations and multistability in two semiconductor ring lasers coupled by a single waveguide

    NASA Astrophysics Data System (ADS)

    Coomans, W.; Van der Sande, G.; Gelens, L.

    2013-09-01

    We theoretically study the dynamical behavior of semiconductor ring lasers coupled by a single bus waveguide, both when weakly coupled and when strongly coupled. We provide a detailed analysis of the multistable landscape in the coupled system, analyze the stability of all solutions, and relate the internal dynamics in the individual lasers to the field effectively measured at the output of the waveguide. We show that coupling phases close to π/2 generally promote instabilities. Finally, our analysis enables us to discuss the advantages and disadvantages for optical memory operation of coupled semiconductor ring lasers versus solitary ones.

  14. Fast random bit generation with bandwidth-enhanced chaos in semiconductor lasers.

    PubMed

    Hirano, Kunihito; Yamazaki, Taiki; Morikatsu, Shinichiro; Okumura, Haruka; Aida, Hiroki; Uchida, Atsushi; Yoshimori, Shigeru; Yoshimura, Kazuyuki; Harayama, Takahisa; Davis, Peter

    2010-03-15

    We experimentally demonstrate random bit generation using multi-bit samples of bandwidth-enhanced chaos in semiconductor lasers. Chaotic fluctuation of laser output is generated in a semiconductor laser with optical feedback and the chaotic output is injected into a second semiconductor laser to obtain a chaotic intensity signal with bandwidth enhanced up to 16 GHz. The chaotic signal is converted to an 8-bit digital signal by sampling with a digital oscilloscope at 12.5 Giga samples per second (GS/s). Random bits are generated by bitwise exclusive-OR operation on corresponding bits in samples of the chaotic signal and its time-delayed signal. Statistical tests verify the randomness of bit sequences obtained using 1 to 6 bits per sample, corresponding to fast random bit generation rates from 12.5 to 75 Gigabit per second (Gb/s) ( = 6 bit x 12.5 GS/s).

  15. Modeling of relative intensity noise and terminal electrical noise of semiconductor lasers using artificial neural network

    NASA Astrophysics Data System (ADS)

    Rezaei, A.; Noori, L.

    2016-06-01

    In this paper, artificial neural network (ANN) is used to predict the source laser's relative intensity noise (RIN) and the terminal electrical noise (TEN) of semiconductor lasers. For this purpose, the multi-layer perceptron (MLP) neural network trained with the back propagation algorithm is used. To develop this model, the normalized bias current and frequency are selected as the input parameters and the RIN and TEN of semiconductor lasers are selected as the output parameters. The obtained results show that the proposed ANN model is in a good agreement with the numerical method, and a small error between the predicted values and the numerical solution is obtained. Therefore, the proposed ANN model is a useful, reliable, fast and cheap tool to predict the RIN and TEN of semiconductor lasers.

  16. A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Microscopic Approach

    NASA Technical Reports Server (NTRS)

    Li, Jianzhong; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

    2001-01-01

    Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field.

  17. Spatial and temporal instabilities in multistripe semiconductor lasers

    SciTech Connect

    Rozzi, T.E.; Shore, K.A.

    1985-01-01

    We review techniques for the analysis of spatial and temporal instabilities in laser devices. The spatial problem and the temporal problem are first considered in isolation. We then proceed to study their interaction, which requires the development of a novel approach based on the Hopf bifurcation theory. This analysis highlights a number of controllable instabilities effects that can be exploited in optical switching and logic applications.

  18. A study on the optical parts for a semiconductor laser module

    NASA Astrophysics Data System (ADS)

    Oh, Jun-Girl; Lee, Dong-Kil; Kim, Yang-Gyu; Lee, Kwang-Hoon; Park, Young-Sik; Jang, Kwang-Ho; Kang, Seung-Goo

    2014-11-01

    A semiconductor laser module consists of a LD (laser diode) chip that generates a laser beam, two cylindrical lenses to collimate the laser beam, a high-reflection mirror to produce a large output by collecting the laser beam, a collimator lens to guide the laser beam to an optical fiber and a protection filter to block reflected laser light that might damage the LD chip. The cylindrical lenses used in a semiconductor laser module are defined as FACs (fast axis collimators) and SACs (slow axis collimators) and are attached to the system module to control the shape of the laser beam. The FAC lens and the SAC lens are made of a glass material to protect the lenses from thermal deformation. In addition, they have aspheric shapes to improve optical performances. This paper presents a mold core grinding process for an asymmetrical aspheric lens and a GMP (glass molding press), what can be used to make aspheric cylindrical lenses for use as FACs or SACs, and a protection filter made by using IAD (ion-beam-assisted deposition). Finally, we developed the aspheric cylindrical lenses and the protection filter for a 10-W semiconductor laser module.

  19. Integrated wavelength stabilization of broad area semiconductor lasers using a dual grating reflector

    NASA Astrophysics Data System (ADS)

    O'Daniel, Jason Kirk

    A new fully integrated wavelength stabilization scheme based on grating-coupled surface-emitting lasers is explored. This wavelength stabilization scheme relies on two gratings. The first grating is fabricated on the p-side of the semiconductor laser in close proximity to the laser waveguide such that it couples light out of the guided mode of the waveguide into a propagating mode in the substrate; this grating is known as the grating coupler. The second grating is fabricated on the n-side of the substrate such that for the stabilization wavelength, this second grating operates in the Littrow condition and is known as the feedback grating. Furthermore with the proper design of the two gratings, the feedback grating will operate under total internal reflection conditions allowing a near unity retro-reflection of the light of the stabilization wavelength. The grating coupler and feedback grating together comprise a dual grating reflector (DGR). The DGR wavelength stabilization scheme is investigated both theoretically by means of numerical modeling and experimentally by integration of a DGR as a wavelength selective reflector into a single quantum well semiconductor laser with a gain peak centered at 975nm. Numerical modeling predicts a peak reflection of approximately 70% including losses and a spectral width of 0.3nm. The integration of a DGR into a semiconductor laser proved both the efficacy of the scheme and also allowed us to experimentally determine the effective reflectivity to be on the order of 62%; the spectral width of light output from these devices is typically on the order of 0.2nm. Furthermore, these devices had light-current characteristic slopes greater than 0.84W/A operating under continuous wave conditions. The DGR was then modified to provide a reflection with two spectral peaks. A semiconductor device incorporating this dual wavelength DGR was fabricated and tested. These devices showed a peak optical power of in excess of 5.5W and a light

  20. Semiconductor-Nanowire-Based Superconducting Qubit.

    PubMed

    Larsen, T W; Petersson, K D; Kuemmeth, F; Jespersen, T S; Krogstrup, P; Nygård, J; Marcus, C M

    2015-09-18

    We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (~0.8 μs) and dephasing times (~1 μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information. PMID:26431009

  1. Semiconductor-Nanowire-Based Superconducting Qubit

    NASA Astrophysics Data System (ADS)

    Larsen, T. W.; Petersson, K. D.; Kuemmeth, F.; Jespersen, T. S.; Krogstrup, P.; Nygârd, J.; Marcus, C. M.

    2015-09-01

    We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (˜0.8 μ s ) and dephasing times (˜1 μ s ), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

  2. Monte Carlo markovian modeling of modal competition in dual-wavelength semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Chusseau, Laurent; Philippe, Fabrice; Jean-Marie, Alain

    2014-03-01

    Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot (QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy in the course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsic laser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristics are varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time in QD, transfer of excitation between QD via the wetting layer. . . As a major result, a possible steady-sate dualmode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave or terahertz-beating source whereas it does not occur for QW lasers.

  3. Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

    SciTech Connect

    Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.; Garcia-Ojalvo, J.

    2010-07-15

    Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensity dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.

  4. Purity of the single frequency mode of a hybrid semiconductor-fiber laser.

    PubMed

    Wahbeh, Mamoun; Kashyap, Raman

    2015-06-15

    The penalty of extending the cavity length of a laser diode when seeking a linewidth reduction is normally revealed by poor side mode suppression, which prevents the laser from operating purely in a single mode of the external cavity. A hybrid laser, based on a C-band semiconductor optical amplifier combined with a long erbium doped fiber external cavity, is carefully engineered to operate with high spectral purity and outstanding stability. For the first time, a side-mode suppression ratio of ≥42 dB, measured at a resolution of 1.16 pm (149 MHz) at all intra-cavity powers above the lasing threshold, is reported. The output power at the peak lasing wavelength is 13.3 dBm. Also, the ability to lock such a hybrid laser to a particular external-cavity mode is realized for the first time. Excluding the effect of mechanical and thermal drifts on the cavity length, the long-term frequency stability is demonstrated to be within ± 11 Hz while the long-term linewidth is 2.26 kHz, measured using the self-beating technique under free running conditions. PMID:26193582

  5. Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures

    SciTech Connect

    Slipchenko, S. O. Podoskin, A. A.; Pikhtin, N. A.; Stankevich, A. L.; Rudova, N. A.; Leshko, A. Y.; Tarasov, I. S.

    2011-05-15

    Spontaneous emission, optical loss, and gain spectra of a laser heterostructure with a quantum-well InGaAs active region have been studied at various optical and electrical pumping levels. It is shown that carrier accumulation in the active region under open-circuit conditions for the photocurrent leads to disappearance of the long-wavelength edge peak in the absorption spectrum. It is found that flowing photocurrent precludes accumulation of photogenerated carriers, with the result that the absorption spectrum retains its shape, irrespective of the optical pumping level. It is shown that many-particle effects of carrier interaction lead to a temperature-unrelated narrowing of the band gap in the InGaAs quantum-well active region by up to 30 meV and to tailing of the long-wavelength edge of the gain spectrum. As a result, a spectral range can be found for mesa-stripe laser diodes in which the gain in the region under the stripe contact is positive and the loss in passive regions is close to zero.

  6. Gain saturation effects in supermodes of phase-locked semiconductor laser arrays

    NASA Technical Reports Server (NTRS)

    Katz, J.; Marshall, W. K.

    1985-01-01

    A basic modal analysis that includes gain saturation effects in phase-locked semiconductor laser arrays is presented. For a particular supermode operation, different lasers in the array emit different amounts of light, and hence their (waveguide) propagation constants are modified differently. Solving the lasers' rate equations self-consistently with the coupled-mode wave equations seems to provide an answer that is in much better agreement with experimental results than the result using only the coupled-mode analysis.

  7. Semiconductor laser with a birefringent external cavity for information systems with wavelength division multiplexing

    SciTech Connect

    Paranin, V D; Matyunin, S A; Tukmakov, K N

    2013-10-31

    The spectrum of a semiconductor laser with a birefringent external Gires – Tournois cavity is studied. The generation of two main laser modes corresponding to the ordinary and extraordinary wave resonances is found. It is shown that the radiation spectrum is controlled with a high energy efficiency without losses for spectral filtration. The possibility of using two-mode lasing in optical communication systems with wavelength division multiplexing is shown. (control of laser radiation parameters)

  8. Selective mode coupling in microring resonators for single mode semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Arbabi, Amir

    Single mode semiconductor laser diodes have many applications in optical communications, metrology and sensing. Edge-emitting single mode lasers commonly use distributed feedback structures, or narrowband reflectors such as distributed Bragg reflectors (DBRs) and sampled grating distributed Bragg reflectors (SGDBRs). Compact, narrowband reflectors with high reflectivities are of interest to replace the commonly used DBRs and SGDBRs. This thesis presents our work on the simulation, design, fabrication, and characterization of devices operating based on the coupling of degenerate modes of a microring resonator, and investigation of the possibility of using them for improving the performance of laser diodes. In particular, we demonstrate a new type of compact, narrowband, on-chip reflector realized by selectively coupling degenerate modes of a microring resonator. For the simulation and design of reflective microring resonators, a fast and accurate analysis method is required. Conventional numerical methods for solving Maxwell's equations such as the finite difference time domain and the finite element method (FEM) provide accurate results but are computationally intense and are not suitable for the design of large 3D structures. We formulated a set of coupled mode equations that, combined with 2D FEM simulations, can provide a fast and accurate tool for the modeling and design of reflective microrings. We developed fabrication processing recipes and fabricated passive reflective microrings on silicon substrates with a silicon nitride core and silicon dioxide cladding. Narrowband single wavelength reflectors were realized which are 70 times smaller than a conventional DBR with the same bandwidth. Compared to the conventional DBR, they have faster roll-off, and no side modes. The smaller footprint saves real estate, reduces tuning power and makes these devices attractive as in-line mirrors for low threshold narrow linewidth laser diodes. Self-heating caused by material

  9. Compact, High Power, Multi-Spectral Mid-Infrared Semiconductor Laser Package

    NASA Astrophysics Data System (ADS)

    Guo, Bujin; Hwang, Wen-Yen; Lin, Chich-Hsiang

    2001-10-01

    Through a vertically integrated effort involving atomic level material engineering, advanced device processing development, state-of-the-art optomechanical packaging, and thermal management, Applied Optoelectronics, Inc. (AOI), University of Houston (U H), and Physical Science, Inc. (PSI) have made progress in both Sb-based type-II semiconductor material and in P-based type-I laser device development. We have achieved record performance on inP based quantum cascade continuous wave (CW) laser (with more than 5 mW CW power at 210 K). Grating-coupled external-cavity quantum cascade lasers were studied for temperatures from 20 to 230 K. A tuning range of 88 nm has been obtained at 80 K. The technology can be made commercially available and represents a significant milestone with regard to the Dual Use Science and Technology (DUST) intention of fostering dual use commercial technology for defense need. AOI is the first commercial company to ship products of this licensed technology.

  10. Generation of terahertz radiation by a surface ballistic photocurrent in semiconductors under subpicosecond laser excitation

    SciTech Connect

    Ziaziulia, P. A.; Malevich, V. L.; Manak, I. S.; Krotkus, A.

    2012-02-15

    An analytical model describing the onset of a surface ballistic photocurrent in cubic semiconductors under femtosecond laser excitation is proposed. It is shown that the contribution of the photocurrent component parallel to the surface to the generation of terahertz pulses may be comparable to the contribution of the perpendicular component. Consideration of the cubic symmetry of a semiconductor leads to the azimuthal anisotropy of terahertz generation.

  11. Plasma Heating and Ultrafast Semiconductor Laser Modulation Through a Terahertz Heating Field

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Ning, C. Z.

    2000-01-01

    Electron-hole plasma heating and ultrafast modulation in a semiconductor laser under a terahertz electrical field are investigated using a set of hydrodynamic equations derived from the semiconductor Bloch equations. The self-consistent treatment of lasing and heating processes leads to the prediction of a strong saturation and degradation of modulation depth even at moderate terahertz field intensity. This saturation places a severe limit to bandwidth achievable with such scheme in ultrafast modulation. Strategies for increasing modulation depth are discussed.

  12. Measurement of the emission linewidth of a single-frequency semiconductor laser with a ring fibre interferometer

    SciTech Connect

    Trikshev, A I; Kurkov, Andrei S; Tsvetkov, V B; Pyrkov, Yu N; Paramonov, V N

    2011-07-31

    A simple scanning interferometer is implemented for measuring the emission linewidth of single-frequency semiconductor lasers. The free dispersion region of the interferometer is 28 MHz, the spectral resolution being 470 kHz. (laser spectroscopy)

  13. Measuring the feedback parameter of a semiconductor laser with external optical feedback.

    PubMed

    Yu, Yanguang; Xi, Jiangtao; Chicharo, Joe F

    2011-05-01

    Feedback parameter (the C factor) is an important parameter for a semiconductor laser operating in the regime of external optical feedback. Self-mixing interferometry (SMI) has been proposed for the measurement of the parameter, based on the time-domain analysis of the output power waveforms (called SMI signals) in presence of feedback. However, the existing approaches only work for a limited range of C, below about 3.5. This paper presents a new method to measure C based on analysis of the phase signal of SMI signals in the frequency domain. The proposed method covers a large range of C values, up to about 10. Simulations and experimental results are presented for verification of the proposed method.

  14. Line laser lock-in thermography for instantaneous imaging of cracks in semiconductor chips

    NASA Astrophysics Data System (ADS)

    An, Yun-Kyu; Yang, Jinyeol; Hwang, Soonkyu; Sohn, Hoon

    2015-10-01

    This study proposes a new line laser lock-in thermography (LLT) technique for instantaneous inspection of surface cracks in semiconductor chips. First, a new line LLT system is developed by integrating a line scanning laser source, a high-speed infrared (IR) camera with a close-up lens, and a control computer. The proposed line LLT system scans a line laser beam onto a target semiconductor chip surface and measures the corresponding thermal wave propagation using an IR camera. A novel baseline-free crack visualization algorithm is then proposed so that heat blocking phenomena caused by crack formation can be automatically visualized and diagnosed without relying on the baseline data obtained from the pristine condition of a target semiconductor chip. The proposed inspection technique offers the following advantages over the existing semiconductor chip inspection techniques: (1) inspection is performed in a noncontact, nondestructive and nonintrusive manner; (2) the crack diagnosis can be accomplished using only current-state thermal images and thus past thermal images are unnecessary; and (3) crack detectability is significantly enhanced by achieving high spatial resolution for thermal images and removing undesired noise components from the measured thermal images. Validation tests are performed on two different types of semiconductor die chips with real micro-cracks produced during actual fabrication processes. The experiments demonstrate that the proposed line LLT technique can successfully visualize and detect semiconductor chip cracks with width of 28-54 μm.

  15. Thermally robust semiconductor optical amplifiers and laser diodes

    DOEpatents

    Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

    2002-01-01

    A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

  16. Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

    DOEpatents

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  17. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  18. SEMICONDUCTOR DEVICES Thermal analysis of the cavity facet for an 808 nm semiconductor laser by using near-field scanning optical microscopy

    NASA Astrophysics Data System (ADS)

    Lan, Rao; Guofeng, Song; Lianghui, Chen

    2010-10-01

    In order to analyze the thermal characteristics of the cavity facet of a semiconductor laser, a home-built near-field scanning optical microscopy (NSOM) is employed to probe the topography of the facet. By comparing the topographic images of two samples under different DC current injections, we can find that the thermal characteristic is related to its lifetime. We show that it is possible to predict the lifetime of the semiconductor laser diode with non-destructive tests.

  19. Tunable semiconductor laser at 1025-1095 nm range for OCT applications with an extended imaging depth

    NASA Astrophysics Data System (ADS)

    Shramenko, Mikhail V.; Chamorovskiy, Alexander; Lyu, Hong-Chou; Lobintsov, Andrei A.; Karnowski, Karol; Yakubovich, Sergei D.; Wojtkowski, Maciej

    2015-03-01

    Tunable semiconductor laser for 1025-1095 nm spectral range is developed based on the InGaAs semiconductor optical amplifier and a narrow band-pass acousto-optic tunable filter in a fiber ring cavity. Mode-hop-free sweeping with tuning speeds of up to 104 nm/s was demonstrated. Instantaneous linewidth is in the range of 0.06-0.15 nm, side-mode suppression is up to 50 dB and polarization extinction ratio exceeds 18 dB. Optical power in output single mode fiber reaches 20 mW. The laser was used in OCT system for imaging a contact lens immersed in a 0.5% intra-lipid solution. The cross-section image provided the imaging depth of more than 5mm.

  20. Observation of reflection feedback induced the formation of bright-dark pulse pairs in an optically pumped semiconductor laser.

    PubMed

    Tsou, C H; Liang, H C; Huang, K F; Chen, Y F

    2016-06-13

    It is experimentally demonstrated that the tiny reflection feedback can lead the optically pumped semiconductor laser (OPSL) to be operated in a self-mod-locked state with a pulse train of bright-dark pulse pairs. A theoretical model based on the multiple reflections in a phase-locked multi-longitudinal-mode laser is developed to confirm the formation of bright-dark pulse pairs. The present finding can offer an important insight into the temporal dynamics in mode-locked OPSLs. PMID:27410319

  1. Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers

    NASA Technical Reports Server (NTRS)

    Li, J.; Ning, Cun-Zheng; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum

  2. Noise spectra of a semiconductor ring laser in the bidirectional regime

    SciTech Connect

    Perez-Serrano, Antonio; Zambrini, Roberta; Scire, Alessandro; Colet, Pere

    2009-10-15

    We analytically investigate the influence of complex backscattering coefficients and pump current on the noise spectra of a two-mode model for semiconductor ring laser in the Langevin formulation. The system features in the bidirectional regime are naturally described in terms of the two mode-intensity sum (I spectrum) and difference (D spectrum). The I spectrum reflects the energy exchange between the total field and the medium and behaves similarly to the relative intensity noise for single-mode semiconductor lasers. The D spectrum represents the energy exchange between the two counterpropagating modes and is shaped by the noisy precursor of a Hopf bifurcation induced by the complex backscattering.

  3. Conductors, semiconductors, and insulators irradiated with short-wavelength free-electron laser

    NASA Astrophysics Data System (ADS)

    Krzywinski, J.; Sobierajski, R.; Jurek, M.; Nietubyc, R.; Pelka, J. B.; Juha, L.; Bittner, M.; Létal, V.; Vorlíček, V.; Andrejczuk, A.; Feldhaus, J.; Keitel, B.; Saldin, E. L.; Schneidmiller, E. A.; Treusch, R.; Yurkov, M. V.

    2007-02-01

    The results of a study of irreversible changes induced at surfaces of metals, semiconductors, and insulators by extreme ultraviolet (λ<100nm) ultrashort pulses provided by TESLA Test Facility Free-Electron Laser, Phase 1 (TTF1 FEL) are reported and discussed. The laser was tuned at 86, 89, and 98nm during the experiments reported here. Energy spectra of ions ejected from the irradiated surfaces are also reported. Special attention is paid to the difference in the ablation behavior of (semi)conductors and insulators that we have observed. The difference is dramatic, while the absorption coefficients are similar for all materials at the TTF1 FEL wavelength.

  4. Final report on LDRD project: Semiconductor surface-emitting microcavity laser spectroscopy for analysis of biological cells and microstructures

    SciTech Connect

    Gourley, P.L.; McDonald, A.E.; Gourley, M.F.; Bellum, J.

    1997-08-01

    This article discusses a new intracavity laser technique that uses living or fixed cells as an integral part of the laser. The cells are placed on a GaAs based semiconductor wafer comprising one half of a vertical cavity surface-emitting laser. After placement, the cells are covered with a dielectric mirror to close the laser cavity. When photo-pumped with an external laser, this hybrid laser emits coherent light images and spectra that depend sensitively on the cell size, shape, and dielectric properties. The light spectra can be used to identify different cell types and distinguish normal and abnormal cells. The laser can be used to study single cells in real time as a cell-biology lab-on-a-chip, or to study large populations of cells by scanning the pump laser at high speed. The laser is well-suited to be integrated with other micro-optical or micro-fluidic components to lead to micro-optical-mechanical systems for analysis of fluids, particulates, and biological cells.

  5. Dynamic behaviors of semiconductor lasers under strong sinusoidal current modulation; Modeling and experiments at 1. 3. mu. m

    SciTech Connect

    Hemery, E. ); Chusseau, L.; Lourtioz, J.M. )

    1990-04-01

    A theoretical and experimental study of the dynamic behaviors of semiconductor lasers under strong sinusoidal modulation is presented. The theoretical analysis is based on rate-equations including gain-compression effects. General criteria are established to predict the existence of irregular behaviors. Experiments are performed on a single-mode buried-heterostructure InGaAsP laser at 1.3 {mu}m. An original method is proposed to evaluate the parameters entering the rate equations. Fully optical measurements are used. The nonlinear gain coefficient and the electrical response of the packaged laser are simultaneously determined from small-signal characteristics. Time-domain measurements show the three behaviors achieved with the studied laser, i.e., simple periodic, periodic with multiple spikes, and period doubling.

  6. Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

    1993-01-01

    We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

  7. Thermal Property Measurement of Semiconductor Melt using Modified Laser Flash Method

    NASA Technical Reports Server (NTRS)

    Lin, Bochuan; Zhu, Shen; Ban, Heng; Li, Chao; Scripa, Rosalla N.; Su, Ching-Hua; Lehoczky, Sandor L.

    2003-01-01

    This study further developed standard laser flash method to measure multiple thermal properties of semiconductor melts. The modified method can determine thermal diffusivity, thermal conductivity, and specific heat capacity of the melt simultaneously. The transient heat transfer process in the melt and its quartz container was numerically studied in detail. A fitting procedure based on numerical simulation results and the least root-mean-square error fitting to the experimental data was used to extract the values of specific heat capacity, thermal conductivity and thermal diffusivity. This modified method is a step forward from the standard laser flash method, which is usually used to measure thermal diffusivity of solids. The result for tellurium (Te) at 873 K: specific heat capacity 300.2 Joules per kilogram K, thermal conductivity 3.50 Watts per meter K, thermal diffusivity 2.04 x 10(exp -6) square meters per second, are within the range reported in literature. The uncertainty analysis showed the quantitative effect of sample geometry, transient temperature measured, and the energy of the laser pulse.

  8. Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

    NASA Astrophysics Data System (ADS)

    McInerney, John G.

    2016-03-01

    Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

  9. Laser-Excited Electronic and Thermal Elastic Vibrations in a Semiconductor Rectangular Plate

    NASA Astrophysics Data System (ADS)

    Todorović, D. M.; Cretin, B.; Vairac, P.; Song, Y. Q.; Rabasović, M. D.; Markushev, D. D.

    2013-09-01

    Photoacoustic and photothermal effects can be important as driven mechanisms for micro-(opto)-electro-mechanical structures (MOEMS). A new approach for a producing a compact, lightweight, highly sensitive detector is provided by MOEMS technology, which is based on the elastic bending of microstructure generated by absorption of modulated optical power. The electronic and thermal elastic vibrations (the electronic deformation and thermoelastic mechanisms of elastic wave generation) in a semiconductor rectangular simply supported plate (3D geometry), photogenerated by a focused and intensity-modulated laser beam, were studied. The theoretical model for the elastic displacements space and frequency distribution by using the Green function method was given. The amplitude of the elastic bending in the rectangular plate was calculated and analyzed, including the thermalization and surface and volume recombination heat sources. The theoretical results were compared with the experimental data. These investigations are important for many practical experimental situations (atomic force microscopy, thermal microscopy, thermoelastic microscopy, etc.) and sensors and actuators.

  10. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, Raymond J.; Benett, William J.; Mills, Steven T.

    1997-01-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a "rack and stack" configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber.

  11. Fiber optic coupling of a microlens conditioned, stacked semiconductor laser diode array

    DOEpatents

    Beach, R.J.; Benett, W.J.; Mills, S.T.

    1997-04-01

    The output radiation from the two-dimensional aperture of a semiconductor laser diode array is efficiently coupled into an optical fiber. The two-dimensional aperture is formed by stacking individual laser diode bars on top of another in a ``rack and stack`` configuration. Coupling into the fiber is then accomplished using individual microlenses to condition the output radiation of the laser diode bars. A lens that matches the divergence properties and wavefront characteristics of the laser light to the fiber optic is used to focus this conditioned radiation into the fiber. 3 figs.

  12. Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching

    DOEpatents

    Hohimer, John P.

    1994-01-01

    A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

  13. Experimental study and chemical application of GaAs semiconductor laser treating trigeminal neuralgia

    NASA Astrophysics Data System (ADS)

    Qiu, Ke-Qum; Cao, Shu-Chen; Wang, Hu-Zhong; Wang, Ke-Ning; Xiao, Ton-Ha; Shen, Ke-Wei

    1993-03-01

    GaAs semiconductor laser was used to treat trigeminal neuralgia with an effective rate of 91.1%, and no side effects were found in 67 cases. Changes in and the recovery of the trigeminal nerve cell were studied with light and electromicroscope. Discussed in this article are the time length and quantity of laser treatment with low power. Experimental study and clinical application of the GaAs semiconductor laser have been carried out in our department since 1987. One-hundred-fifteen patients with various diseases in the maxillofacial region (including 67 cases of trigeminal neuralgia) have been treated with satisfactory effects and without any side-effects. The wavelength of the laser is 904 mu, the largest pulse length is 200 mu, and the average power is 2000 HZ.

  14. Analysis of thermal conditions of high-power semiconductor lasers and their arrays

    SciTech Connect

    Mikaelyan, G T

    2006-03-31

    The results of thermophysical investigations of semiconductor lasers are reported, which underlie the formulation of the optimal requirements on the materials, design parameters, and technological assembling conditions for high-power semiconductor lasers and their one- and two-dimensional arrays with the goal of most efficient heat removal. The methods are outlined for calculating the residual post-assembling mechanical stress and determining the assemblage conditions under which the attendant stress is insignificant and its effect on the laser quality is minimal. Also the methods are given for calculating the thermal resistance for different heat sinks, including heat sinks with forced cooling, and of determining the design requirements on the heat sink arising from specific service conditions. (lasers)

  15. Enhancement of the phase-modulation range by using cascaded injection-locked semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Lee, Hwan; Cho, Jun-Hyung; Sung, Hyuk-Kee

    2016-03-01

    The phase modulation of an injection-locked semiconductor laser can be controlled by tuning the injection-locking parameters. However, the phase-modulation range is limited to 180°, which significantly hinders its widespread application. In this study, we investigated the phase-modulation characteristics of a single stage of an injection-locked laser configuration by considering a slave laser's bias control as a tuning parameter. Herein, we propose cascaded injection-locked laser configurations to enhance the phase-modulation range and theoretically demonstrate that the achievable phase-modulation range can be increased. The output of the slave laser is used as the input of the next slave laser to produce an accumulated phase modulation. The results show that a phase modulation of 360° can be achieved using the cascaded configurations; moreover, the number of cascaded configurations required to achieve this range is determined for specific laser parameters.

  16. Electrically pumped semiconductor laser with monolithic control of circular polarization

    PubMed Central

    Rauter, Patrick; Lin, Jiao; Genevet, Patrice; Khanna, Suraj P.; Lachab, Mohammad; Giles Davies, A.; Linfield, Edmund H.; Capasso, Federico

    2014-01-01

    We demonstrate surface emission of terahertz (THz) frequency radiation from a monolithic quantum cascade laser with built-in control over the degree of circular polarization by “fishbone” gratings composed of orthogonally oriented aperture antennas. Different grating concepts for circularly polarized emission are introduced along with the presentation of simulations and experimental results. Fifth-order gratings achieve a degree of circular polarization of up to 86% within a 12°-wide core region of their emission lobes in the far field. For devices based on an alternative transverse grating design, degrees of circular polarization as high as 98% are demonstrated for selected far-field regions of the outcoupled THz radiation and within a collection half-angle of about 6°. Potential and limitations of integrated antenna gratings for polarization-controlled emission are discussed. PMID:25512515

  17. Electrically pumped semiconductor laser with monolithic control of circular polarization.

    PubMed

    Rauter, Patrick; Lin, Jiao; Genevet, Patrice; Khanna, Suraj P; Lachab, Mohammad; Giles Davies, A; Linfield, Edmund H; Capasso, Federico

    2014-12-30

    We demonstrate surface emission of terahertz (THz) frequency radiation from a monolithic quantum cascade laser with built-in control over the degree of circular polarization by "fishbone" gratings composed of orthogonally oriented aperture antennas. Different grating concepts for circularly polarized emission are introduced along with the presentation of simulations and experimental results. Fifth-order gratings achieve a degree of circular polarization of up to 86% within a 12°-wide core region of their emission lobes in the far field. For devices based on an alternative transverse grating design, degrees of circular polarization as high as 98% are demonstrated for selected far-field regions of the outcoupled THz radiation and within a collection half-angle of about 6°. Potential and limitations of integrated antenna gratings for polarization-controlled emission are discussed. PMID:25512515

  18. Optically pumped semiconductor quantum dot disk laser operating at 1180 nm.

    PubMed

    Rautiainen, Jussi; Krestnikov, Igor; Butkus, Mantas; Rafailov, Edik U; Okhotnikov, Oleg G

    2010-03-01

    We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski-Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic GaAs/AlAs distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output (M(2)<1.2) with circular beam shape operating at 1180 nm in a disk laser geometry.

  19. Advances in optically pumped semiconductor lasers for blue emission under frequency doubling

    NASA Astrophysics Data System (ADS)

    Bai, Yanbo; Wisdom, Jeffrey; Charles, John; Hyland, Patrick; Scholz, Christian; Xu, Zuntu; Lin, Yong; Weiss, Eli; Chilla, Juan; Lepert, Arnaud

    2016-03-01

    Optically pumped semiconductor lasers (OPSL) offer the advantage of excellent beam quality, wavelength agility, and high power scaling capability. In this talk we will present our recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for lightshow applications. Fundamental challenges and mitigations are revealed through electrical, optical, thermal, and mechanical modeling. Results also include beam quality enhancement in addressing the competition from diode lasers.

  20. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

    PubMed Central

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

    2015-01-01

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films. PMID:26527570

  1. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating.

    PubMed

    Rickey, Kelly M; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S Venkataprasad; Wu, Yue; Cheng, Gary J; Ruan, Xiulin

    2015-01-01

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~10(5) Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

  2. Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

    NASA Astrophysics Data System (ADS)

    Rickey, Kelly M.; Nian, Qiong; Zhang, Genqiang; Chen, Liangliang; Suslov, Sergey; Bhat, S. Venkataprasad; Wu, Yue; Cheng, Gary J.; Ruan, Xiulin

    2015-11-01

    We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.

  3. Intra-cavity frequency-doubled mode-locked semiconductor disk laser at 325 nm.

    PubMed

    Bek, Roman; Baumgärtner, Stefan; Sauter, Fabian; Kahle, Hermann; Schwarzbäck, Thomas; Jetter, Michael; Michler, Peter

    2015-07-27

    We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm.

  4. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

    PubMed Central

    Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

    2016-01-01

    In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

  5. Critical slowing down and critical exponents in LD/PIN optically-bistable semiconductor lasers

    SciTech Connect

    Zhong Lichen; Guo Yili

    1988-04-01

    Critical slowing down for LD/PIN bistable optical semiconductor lasers and the critical exponents ..gamma.. for this system have been experimentally investigated. The experimental value ..gamma..approx.0.53 is basically in agreement with the theoretically predicted value of 0.5.

  6. Determining the cardiovascular pulse waveform using a semiconductor laser autodyne signal

    NASA Astrophysics Data System (ADS)

    Usanov, D. A.; Skripal', A. V.; Kashchavtsev, E. O.

    2013-03-01

    It is shown that a semiconductor laser autodyne signal can be used to reconstruct the pulse waveform in the human radial artery. The pulse waveforms determined using the proposed autodyne system are compared to those obtained by an oscillographic technique using a pneumatic sensor at various pressures in the arm cuff.

  7. Life prediction of 808nm high power semiconductor laser by accelerated life test of constant current stress

    NASA Astrophysics Data System (ADS)

    Yao, Nan; Li, Wei; Zhao, Yihao; Zhong, Li; Liu, Suping; Ma, Xiaoyu

    2015-10-01

    High power semiconductor laser is widely used because of its high transformation efficiency, good working stability, compact volume and simple driving requirements. Laser's lifetime is very long, but tests at high levels of stress can speed up the failure process and shorten the times to failure significantly. So accelerated life test is used here for forecasting the lifetime of 808nm CW GaAs/AlGaAs high power semiconductor laser that has an output power of 1W under 1.04A. Accelerated life test of constant current stress based on the Inverse Power Law Relationship was designed. Tests were conducted under 1.3A, 1.6A and 1.9A at room temperature. It is the first time that this method is used in the domestic research of laser's lifetime prediction. Applying Weibull Distribution to describe the lifetime distribution and analyzing the data of times to failure, characteristics lifetime's functional relationship model with current is achieved. Then the characteristics lifetime under normal current is extrapolated, which is 9473h. Besides, to confirm the validity of the functional relationship model, we conduct an additional accelerated life test under 1.75A. Based on this experimental data we calculated the characteristics lifetime corresponding to 1.75A that is 171h, while the extrapolated characteristics lifetime from the former functional relationship model is 162h. The two results shows 5% deviation that is very low and acceptable, which indicates that the test design is reasonable and authentic.

  8. Laser furnace and method for zone refining of semiconductor wafers

    NASA Technical Reports Server (NTRS)

    Griner, Donald B. (Inventor); zur Burg, Frederick W. (Inventor); Penn, Wayne M. (Inventor)

    1988-01-01

    A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

  9. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

    PubMed Central

    Irokawa, Yoshihiro

    2011-01-01

    In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

  10. Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces.

    PubMed

    Irokawa, Yoshihiro

    2011-01-01

    In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V) characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

  11. Linearization of the frequency sweep of a frequency-modulated continuous-wave semiconductor laser radar and the resulting ranging performance.

    PubMed

    Karlsson, C J; Olsson, F A

    1999-05-20

    The performance of a frequency-modulated continuous-wave (FMCW) semiconductor laser radar has been examined. Frequency modulation (linear chirp) has been studied experimentally in detail. To create a linear frequency sweep, we modified the modulating function according to the measured frequency response of the laser, using an arbitrary function generator. The measurements indicate the possibility of achieving a spectral width of the signal peak that is transform limited rather than limited by the frequency modulation response of the laser, which permits the use of a narrow detection bandwidth. The narrow width results in a relatively high signal-to-noise ratio for low output power and thus also in relatively long-range and high-range accuracy. We have performed measurements of a diffuse target to determine the performance of a test laser radar system. The maximum range, range accuracy, and speed accuracy for a semiconductor laser with an output power of 10 mW and a linewidth of 400 kHz are presented. The influence of the laser's output power and coherence length on the performance of a semiconductor-laser-based FMCW laser radar is discussed. PMID:18319935

  12. Field performance of an all-semiconductor laser coherent Doppler lidar.

    PubMed

    Rodrigo, Peter John; Pedersen, Christian

    2012-06-15

    We implement and test what, to our knowledge, is the first deployable coherent Doppler lidar (CDL) system based on a compact, inexpensive all-semiconductor laser (SL). To demonstrate the field performance of our SL-CDL remote sensor, we compare a 36 h time series of averaged radial wind speeds measured by our instrument at an 80 m distance to those simultaneously obtained from an industry-standard sonic anemometer (SA). An excellent degree of correlation (R2=0.994 and slope=0.996) is achieved from a linear regression analysis of the CDL versus SA wind speed data. The lidar system is capable of providing high data availability, ranging from 85% to 100% even under varying outdoor (temperature and humidity) conditions during the test period. We also show the use of our SL-CDL for monitoring the dependence of aerosol backscatter on relative humidity. This work points to the feasibility of a more general class of low-cost, portable remote sensors based on all-SL emitters for applications that require demanding laser stability and coherence. PMID:22739880

  13. Rapid composition analysis of compound semiconductor thin film solar cell by laser induced breakdown spectroscopy

    NASA Astrophysics Data System (ADS)

    Lee, S. H.; Kim, C. K.; In, J. H.; Jeong, S. H.

    2014-03-01

    The characteristics of laser-induced breakdown spectroscopy (LIBS) such as short measurement time and no sample preparation provide clear advantages over other analytical techniques for rapid elemental analysis at manufacturing sites where the composition of products need to be determined in real-time for process monitoring or quality control. Thin film solar cells based on CuIn1-xGaxSe2 (CIGS), polycrystalline compound semiconductor material, have unique advantages of high efficiency (>20%), long-term stability, and low manufacturing cost over other types of solar cell. The electrical and optical properties of the thin CIGS films are closely related to the concentration ratios among its major constituent elements Cu, In, Ga and Se such as Ga/(Ga + In) and Cu/(Ga + In), and thus an accurate measurement of the composition of CIGS thin films has been an issue among CIGS solar cell researchers, requiring a fast and reliable technique for composition analysis. This paper presents the results of nanosecond (ns) and femtosecond (fs) laser based LIBS analysis of thin CIGS films. The critical issues for LIBS analysis of CIGS thin films such are discussed in comparison with ns- and fs-LIBS measurement results. The calibration of LIBS signal intensity ratios with respect to reference concentration data is carried out and the results of optimal line selection for LIBS analysis, depth profiling capability, and reproducibility are discussed.

  14. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

    SciTech Connect

    Petrunov, A. N.; Podoskin, A. A.; Shashkin, I. S.; Slipchenko, S. O.; Pikhtin, N. A. Nalet, T. A.; Fetisova, N. V.; Vavilova, L. S.; Lyutetskiy, A. V.; Alekseev, P. A.; Titkov, A. N.; Tarasov, I. S.

    2010-06-15

    Asymmetric heterostructures with an ultrathick waveguide based on an AlGaAs/GaAs alloy system that allow lasing at a wavelength of 905 nm have been developed and fabricated by hydride metalorganic vapor-phase epitaxy. The internal optical loss and internal quantum efficiency of semiconductor lasers based on such structures were 0.7 cm{sup -1} and 97%, respectively. It is shown that the highest output optical power of laser diodes with antireflecting (SiO{sub 2}) and reflecting (Si/SiO{sub 2}) coatings deposited on untreated Fabry-Perot cavity facets obtained by cleaving in an oxygen atmosphere reached 67 W in the pulsed mode and is limited by mirror damage. Treatment of Fabry-Perot cavity facets by etching in argon plasma and the formation of coatings with passivating and oxygen-blocking GaN and Si{sub 3}N{sub 4} layers allowed an increase in the maximum output optical power to 120 W. Mirror damage was not observed at the attained output optical power.

  15. Multiwavelength diode-laser absorption spectroscopy using external intensity modulation by semiconductor optical amplifiers.

    PubMed

    Karagiannopoulos, Solon; Cheadle, Edward; Wright, Paul; Tsekenis, Stylianos; McCann, Hugh

    2012-12-01

    A novel opto-electronic scheme for line-of-sight Near-IR gas absorption measurement based on direct absorption spectroscopy (DAS) is reported. A diode-laser-based, multiwavelength system is designed for future application in nonintrusive, high temporal resolution tomographic imaging of H2O in internal combustion engines. DAS is implemented with semiconductor optical amplifiers (SOAs) to enable wavelength multiplexing and to induce external intensity modulation for phase-sensitive detection. Two overtone water transitions in the Near-IR have been selected for ratiometric temperature compensation to enable concentration measurements, and an additional wavelength is used to account for nonabsorbing attenuation. A wavelength scanning approach was used to evaluate the new modulation technique, and showed excellent absorption line recovery. Fixed-wavelength, time-division-multiplexing operation with SOAs has also been demonstrated. To the best of our knowledge this is the first time SOAs have been used for modulation and switching in a spectroscopic application. With appropriate diode laser selection this scheme can be also used for other chemical species absorption measurements. PMID:23207374

  16. Multiwavelength diode-laser absorption spectroscopy using external intensity modulation by semiconductor optical amplifiers.

    PubMed

    Karagiannopoulos, Solon; Cheadle, Edward; Wright, Paul; Tsekenis, Stylianos; McCann, Hugh

    2012-12-01

    A novel opto-electronic scheme for line-of-sight Near-IR gas absorption measurement based on direct absorption spectroscopy (DAS) is reported. A diode-laser-based, multiwavelength system is designed for future application in nonintrusive, high temporal resolution tomographic imaging of H2O in internal combustion engines. DAS is implemented with semiconductor optical amplifiers (SOAs) to enable wavelength multiplexing and to induce external intensity modulation for phase-sensitive detection. Two overtone water transitions in the Near-IR have been selected for ratiometric temperature compensation to enable concentration measurements, and an additional wavelength is used to account for nonabsorbing attenuation. A wavelength scanning approach was used to evaluate the new modulation technique, and showed excellent absorption line recovery. Fixed-wavelength, time-division-multiplexing operation with SOAs has also been demonstrated. To the best of our knowledge this is the first time SOAs have been used for modulation and switching in a spectroscopic application. With appropriate diode laser selection this scheme can be also used for other chemical species absorption measurements.

  17. Quantifying complexity of the chaotic regime of a semiconductor laser subject to feedback via information theory measures

    NASA Astrophysics Data System (ADS)

    Soriano, Miguel C.; Zunino, Luciano; Rosso, Osvaldo A.; Mirasso, Claudio R.

    2010-04-01

    The time evolution of the output of a semiconductor laser subject to optical feedback can exhibit high-dimensional chaotic fluctuations. In this contribution, our aim is to quantify the complexity of the chaotic time-trace generated by a semiconductor laser subject to delayed optical feedback. To that end, we discuss the properties of two recently introduced complexity measures based on information theory, namely the permutation entropy (PE) and the statistical complexity measure (SCM). The PE and SCM are defined as a functional of a symbolic probability distribution, evaluated using the Bandt-Pompe recipe to assign a probability distribution function to the time series generated by the chaotic system. In order to evaluate the performance of these novel complexity quantifiers, we compare them to a more standard chaos quantifier, namely the Kolmogorov-Sinai entropy. Here, we present numerical results showing that the statistical complexity and the permutation entropy, evaluated at the different time-scales involved in the chaotic regime of the laser subject to optical feedback, give valuable information about the complexity of the laser dynamics.

  18. Experimental study on apoptosis induced by semiconductor laser to hair removal and armpit odor treatment

    NASA Astrophysics Data System (ADS)

    Shi, Hongmin; Yan, Min; Zhang, Meijue

    2005-07-01

    Objective: To observe and explore the effects and mechanism of apoptosis on canine induced by Laser. Try to find a new approach to treat of armpit odor with no traumatism. Method: We used different power of semiconductor Laser to irradiate the black hair canine to observe and evaluate the tissue effects with electroscope, flow cytometry and Tunel technique at different period of time after irradiation. Result: The apoptosis has been observed within the hair follicle cells and apocrine gland cells after irradiation. After repeat irradiation in low power level, more apoptosis has been observed. Conclusion: Apoptosis exists in hair follicle cells and apocrine gland cells after Laser irradiation.

  19. Consistency Properties of a Chaotic Semiconductor Laser Driven by Optical Feedback

    NASA Astrophysics Data System (ADS)

    Oliver, Neus; Jüngling, Thomas; Fischer, Ingo

    2015-03-01

    We experimentally study consistency properties of a semiconductor laser in response to a coherent optical drive originating from delayed feedback. The laser is connected to a short and a long optical fiber loop, switched such that only one is providing input to the laser at a time. This way, repeating the exact same optical drive twice, we find consistent or inconsistent responses depending on the pump parameter and we relate the kind of response to strong and weak chaos. Moreover, we are able to experimentally determine the sub-Lyapunov exponent, underlying the consistency properties.

  20. Simulation of fiber communication systems with semiconductor microcavity lasers as light transmitters

    NASA Astrophysics Data System (ADS)

    Zhao, Hongdong; Shen, Guangdi; Zhang, Cunshan; Lin, ShiMing; Cao, Jie; Wang, Shou-Wu

    1996-09-01

    We have simulated fiber communication systems with the semiconductor micro-cavity lasers as light transmitters using rate equations. When the spontaneous emission factor of micro-cavity equals 0.1 and the lasers are modulated by 10 Gbit/s numerical codes, we have obtained both the received eye diagram after they transmit 60 kilometers and the relations of the unit area of the eye diagram with the transmission distance. It will provide theoretical value for the application of the micro-cavity lasers in optical communication.

  1. Analytical stability boundaries of an injected two-polarization semiconductor laser.

    PubMed

    Friart, Gaetan; Gavrielides, Athanasios; Erneux, Thomas

    2015-04-01

    The classical problem of a semiconductor laser subject to polarized injection is revisited. From the laser rate equations for the transverse electric (TE) and transverse magnetic (TM) modes, we first determine the steady states. We then investigate their linear stability properties and derive analytical expressions for the steady, saddle-node, and Hopf bifurcation points. We highlight conditions for bistability between pure- and mixed-mode steady states for the laser subject to either TE or TM injection. To our knowledge, the first case has not been documented yet. An important parameter is the ratio of the polarization gain coefficients and we explore its effect on the stability and bifurcation diagrams. PMID:25974573

  2. Comparison of the coherence properties of superradiance and laser emission in semiconductor structures

    SciTech Connect

    Vasil'ev, Petr P; Penty, R V; White, I H

    2012-12-31

    The coherence properties of a transient electron - hole state developing during superradiance emission in semiconductor laser structures have been studied experimentally using a Michelson interferometer and Young's classic double-slit configuration. The results demonstrate that, in the lasers studied, the first-order correlation function, which quantifies spatial coherence, approaches unity for superradiant emission and is 0.2 - 0.5 for laser emission. The supercoherence is due to long-range ordering upon the superradiant phase transition. (special issue devoted to the 90th anniversary of n.g. basov)

  3. Preliminary study on weight reduction of obesity Patients with semiconductor laser acupuncture

    NASA Astrophysics Data System (ADS)

    Cao, Chun; Wang, Jannan; Liao, Jianghong; Zhang, Jinghe; Qiao, Yongfan; Liu, Jindong; Liu, Jun-Qi; Lu, Zhenwu

    1998-08-01

    To study the effects of the laser on simple obesity (SO), 40 cases of SO patients, which was treated with Semiconductor Laser Acupuncture (SLA), were observed. The treatment Results: the obvious effect were 19 cases (47.5%), the effect 19(47.5%) and no effect 2(5%), so the total effect reached to 95% (P less than 0.01). No any side affection has been observed, and it is suggested that the Laser beam on acupoint can regulate the function of endocrine why the obesity happens.

  4. Simulation of spectral stabilization of high-power broad-area edge emitting semiconductor lasers.

    PubMed

    Holly, Carlo; Hengesbach, Stefan; Traub, Martin; Hoffmann, Dieter

    2013-07-01

    The simulation of spectral stabilization of broad-area edge-emitting semiconductor diode lasers is presented in this paper. In the reported model light-, temperature- and charge carrier-distributions are solved iteratively in frequency domain for transverse slices along the semiconductor heterostructure using wide-angle finite-difference beam propagation. Depending on the operating current the laser characteristics are evaluated numerically, including near- and far-field patterns of the astigmatic laser beam, optical output power and the emission spectra, with central wavelength and spectral width. The focus of the model lies on the prediction of influences on the spectrum and power characteristics by frequency selective feedback from external optical resonators. Results for the free running and the spectrally stabilized diode are presented.

  5. Pulsed-Laser Deposition of Electronic Oxides: Superconductor and Semiconductor Applications

    SciTech Connect

    Norton, D.P.; Park, C.; Lee, Y.E.; Budai, J.D.; Chisholm, M.F.; Verebelyi, D.T.; Christen, D.K.; Kroeger, D.M.

    2000-01-24

    Over the past decade, pulsed-laser deposition (PLD) has proven to be one of the most versatile and effective methods for obtaining high-quality electronic oxide thin-film materials. Much of this success can be attributed to its initial use in depositing high temperature superconducting materials. However, pulsed-laser deposition is now a leading research tool in the development of various electronic oxide thin-film technologies, In this paper, recent progress in the deposition of oxide materials on dissimilar materials for both superconductor and semiconductor applications is discussed. Recent developments in the synthesis of superconducting wires via epitaxial growth of superconducting oxides on biaxially textured metal tapes is described. In addition, efforts to integrate high-k dielectric oxides on semiconductor surfaces using pulsed-laser deposition are highlighted.

  6. Laser writing of semiconductor nanoparticles and quantum dots

    SciTech Connect

    Bertino, M.F.; Gadipalli, R.R.; Story, J.G.; Williams, C.G.; Zhang, G.; Sotiriou-Leventis, C.; Tokuhiro, A.T.; Guha, S.; Leventis, N.

    2004-12-13

    Silica aerogels were patterned with CdS using a photolithographic technique based on local heating with infrared (IR) light. The solvent of silica hydrogels was exchanged with an aqueous solution of the precursors CdNO{sub 3} and NH{sub 4}OH, all precooled to a temperature of 5 deg. C. Half of the bathing solution was then replaced by a thiourea solution. After thiourea diffused into the hydrogels, the samples were exposed to a focused IR beam from a continuous wave, Nd-YAG laser. The precursors reacted in the spots heated by the IR beam to form CdS nanoparticles. We lithographed features with a diameter of about 40 {mu}m, which extended inside the monoliths for up to 4 mm. Samples were characterized with transmission electron microscopy and optical absorption, photoluminescence, and Raman spectroscopies. Spots illuminated by the IR beam were made up by CdS nanoparticles dispersed in a silica matrix. The CdS nanoparticles had a diameter in the 4-6 nm range in samples exposed for 4 min to the IR beam, and of up to 100 nm in samples exposed for 10 min.

  7. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    PubMed Central

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  8. Watt-level passively Q-switched heavily Er(3+)-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror.

    PubMed

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-01-01

    A diode-cladding pumped mid-infrared passively Q-switched Er(3+)-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail. PMID:27225029

  9. Watt-level passively Q-switched heavily Er3+-doped ZBLAN fiber laser with a semiconductor saturable absorber mirror

    NASA Astrophysics Data System (ADS)

    Shen, Yanlong; Wang, Yishan; Luan, Kunpeng; Huang, Ke; Tao, Mengmeng; Chen, Hongwei; Yi, Aiping; Feng, Guobin; Si, Jinhai

    2016-05-01

    A diode-cladding pumped mid-infrared passively Q-switched Er3+-doped ZBLAN fiber laser with an average output power of watt-level based on a semiconductor saturable absorber mirror (SESAM) is demonstrated. Stable pulse train was produced at a slope efficiency of 17.8% with respect to launched pump power. The maximum average power of 1.01 W at a repetition rate of 146.3 kHz was achieved with a corresponding pulse energy of 6.9 μJ, from which the maximum peak power was calculated to be 21.9 W. To the best of our knowledge, the average power and the peak power are the highest in 3 μm region passively Q-switched fiber lasers. The influence of gain fiber length on the operation regime of the fiber laser has been investigated in detail.

  10. Analysis of the effects of periodic forcing in the spike rate and spike correlation's in semiconductor lasers with optical feedback

    NASA Astrophysics Data System (ADS)

    Quintero-Quiroz, C.; Sorrentino, Taciano; Torrent, M. C.; Masoller, Cristina

    2016-04-01

    We study the dynamics of semiconductor lasers with optical feedback and direct current modulation, operating in the regime of low frequency fluctuations (LFFs). In the LFF regime the laser intensity displays abrupt spikes: the intensity drops to zero and then gradually recovers. We focus on the inter-spike-intervals (ISIs) and use a method of symbolic time-series analysis, which is based on computing the probabilities of symbolic patterns. We show that the variation of the probabilities of the symbols with the modulation frequency and with the intrinsic spike rate of the laser allows to identify different regimes of noisy locking. Simulations of the Lang-Kobayashi model are in good qualitative agreement with experimental observations.

  11. A semiconductor injection-switched high-pressure sub-10-picosecond carbon dioxide laser amplifier

    NASA Astrophysics Data System (ADS)

    Hughes, Michael Kon Yew

    A multiatmospheric-pressure-broadened CO2 laser amplifier was constructed to amplify sub-10-picosecond pulses generated with semiconductor switching. High-intensity, mid-infrared, amplified pulses have many applications: especially in fields such as non-linear optics, laser-plasma interaction, and laser particle acceleration. The injected pulses are produced by exciting GaAs (or an engineered, fast-recombination time semiconductor) with an ultrafast visible laser pulse to induce transient free carriers with sufficient density to reflect a co-incident hybrid-CO2 laser pulse. The short pulse is injected directly into the regenerative amplifier cavity from an intra-cavity semiconductor switch. The CO2-gas-mix amplifier is operated at 1.24 MPa which is sufficient to collisionally broaden the individual rotational spectral lines so that they merge to produce a gain spectrum wide enough to support pulses less than 10 ps long. After sufficient amplification, the pulse is switched out with another semiconductor switch pumped with a synchronized visible-laser pulse. This system is demonstrated and analysed spectrally and temporally. The pulse-train spectral analysis is done for a GaAs-GaAs double-switch arrangement using a standard spectrometer and two HgCdTe detectors; one of which is used for a reference signal. An infrared autocorrelator was designed and constructed to temporally analyse the pulse trains emerging from the amplifier. Interpretation of the results was aided by the development of a computer model for short-pulse amplification which incorporated saturation effects, rotational- and vibrational-mode energy redistribution between pulse round trips, and the gain enhancement due to one sequence band. The results show that a sub-10-picosecond pulse is injected into the cavity and that it is amplified with some trailing pulses at 18 ps intervals generated by coherent effects. The energy level reached, estimated through modelling, was >100 mJ/cm2.

  12. Method and Apparatus for Linewidth Reduction in Distributed Feedback or Distributed Bragg Reflector Semiconductor Lasers using Vertical Emission

    NASA Technical Reports Server (NTRS)

    Cook, Anthony L. (Inventor); Hendricks, Herbert D. (Inventor)

    1998-01-01

    The linewidth of a distributed feedback semiconductor laser or a distributed Bragg reflector laser having one or more second order gratings is reduced by using an external cavity to couple the vertical emission back into the laser. This method and device prevent disturbance of the main laser beam. provide unobstructed access to laser emission for the formation of the external cavity. and do not require a very narrow heat sink. Any distributed Bragg reflector semiconductor laser or distributed feedback semiconductor laser that can produce a vertical emission through the epitaxial material and through a window in the top metallization can be used. The external cavity can be formed with an optical fiber or with a lens and a mirror of grating.

  13. Static and Dynamic Effects of Lateral Carrier Diffusion in Semiconductor Lasers

    NASA Technical Reports Server (NTRS)

    Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. It is well known that the value of diffusion coefficients affects the threshold pumping current of a semiconductor laser. At the same time, the strength of carrier diffusion process is expected to affect the modulation bandwidth of an AC-modulated laser. It is important not only to investigate the combined DC and AC effects due to carrier diffusion, but also to separate the AC effects from that of the combined effects in order to provide design insights for high speed modulation. In this presentation, we apply a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations. The model allows microscopic calculation of the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature. We first studied combined AC and DC effects of lateral carrier diffusion by studying the bandwidth dependence on diffusion coefficient at a given DC current under small signal modulation. The results show an increase of modulation bandwidth with decrease in the diffusion coefficient. We simultaneously studied the effects of nonlinearity in the diffusion coefficient. To clearly identify how much of the bandwidth increase is a result of decrease in the threshold pumping current for smaller diffusion coefficient, thus an effective increase of DC pumping, we study the bandwidth dependence on diffusion coefficient at a given relative pumping. A detailed comparison of the two cases will be presented.

  14. Impact of Laser Radiation on Microhardness of a Semiconductor

    SciTech Connect

    Medvid', A.; Onufrijevs, P.; Chiradze, G.; Muktupavela, F.

    2011-12-23

    It was found that strongly absorbed Nd:YAG laser radiation leads to a non-monotonous dependence of microhardness of p- and n-type Si crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of microhardness at higher laser intensity is explained by formation of mechanically compressed layer at the irradiated surface due to concentration of the interstitial atoms of Si at the surface in temperature gradient field. The decrease of the microhardness is explained by formation of nano-cones as a result of plastic deformation of the mechanically stressed layer. The additional maximum at lower laser intensity for p-Si crystal is explained by p-n type inversion of Si conductivity.

  15. Investigation of the light field of a semiconductor diode laser.

    PubMed

    Ankudinov, A V; Yanul, M L; Slipchenko, S O; Shelaev, A V; Dorozhkin, P S; Podoskin, A A; Tarasov, I S

    2014-10-20

    Scanning near-field optical microscopy was applied to study, with sub-wavelength spatial resolution, the near- and the far-field distributions of propagating modes from a high-power laser diode. Simple modeling was also performed and compared with experimental results. The simulated distributions were consistent with the experiment and permitted clarification of the configuration of the transverse modes of the laser. PMID:25401675

  16. Incoherent GaAlAs/GaAs semiconductor laser arrays

    NASA Technical Reports Server (NTRS)

    Hwang, C. J.; Chen, J. S.; Fu, R. J.; Wu, D. H.; Wang, C. S.

    1988-01-01

    The fabrication of an incoherent laser array is reported. The main features of the arrays are low threshold index-guided laser elements, single-lobe far-field pattern, low astigmatism, low current operation, dense packing, and total electrical and optical isolation. With further development, this device should have applications in multihead optical-disk reading and writing, multifiber optical communications, and line-of-sight communications.

  17. Influence of carrier nonuniformity on the phase relationship between frequency and intensity modulation in semiconductor lasers

    SciTech Connect

    Doyle, O.; Gallion, P.B.; Debarge, G.

    1988-03-01

    The chirp to modulated power ratio is an important characteristic of semiconductor laser dynamics and is closely related to the linewidth enhancement factor ..cap alpha... The authors measured the modulus and phase of the CPR for a 1.5 ..mu..m buried heterostructure laser and a 0.85 ..mu..m channeled-substrate planar (CSP) laser. The results for the phase are inconsistent with previously published expressions including spontaneous emission and spectral hole burning. In particular the CSP laser exhibits an abrupt phase shift in the CPR. They present an explanation of this behavior in terms of the influence of a nonuniform carrier density on the phase-amplitude coupling, as expressed by an integral expression for the mode parameter ..cap alpha... Using a simple model for lateral behavior which analytically incorporates diffusion and a nonuniform material ..cap alpha.. parameter, they obtained qualitative agreement with the CSP data. Thus the authors demonstrate the importance of the lateral laser structure on the phase-amplitude coupling in index-guided semiconductor lasers, and the usefulness of CPR phase measurements for laser characterization.

  18. Microscopic analysis of non-equilibrium dynamics in the semiconductor-laser gain medium

    SciTech Connect

    Hader, J.; Moloney, J. V.; Koch, S. W.

    2014-04-14

    Fully microscopic many-body calculations are used to analyze the carrier dynamics in situations where a strong sub-picosecond pulse interacts with an inverted semiconductor quantum well. Electron-electron and electron-phonon scatterings are calculated on a second Born-Markov level. Intra-subband scatterings on a scale of tens of femtoseconds are shown to quickly re-fill the kinetic holes created in the carrier distributions during the pulse amplification. Even for sub-100 fs pulses, this significantly influences the pulse amplification as well as its spectral dependence. Interband scatterings on a few picosecond timescale limit the possibly achievable repetition rate in pulsed semiconductor lasers.

  19. All quantum dot mode-locked semiconductor disk laser emitting at 655 nm

    SciTech Connect

    Bek, R. Kersteen, G.; Kahle, H.; Schwarzbäck, T.; Jetter, M.; Michler, P.

    2014-08-25

    We present a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM) with emission in the red spectral range. Both the gain and the absorber structure are fabricated by metal-organic vapor-phase epitaxy in an anti-resonant design using quantum dots as active material. A v-shaped cavity is used to tightly focus onto the SESAM, producing pulses with a duration of about 1 ps at a repetition rate of 852 MHz.

  20. Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers

    SciTech Connect

    Donskoi, E N; Zalyalov, A N; Petrushin, O N; Savel'ev, Yu A; Tarasov, M D; Shigaev, Yu S; Zhdanova, E V; Zverev, M M; Peregudov, D V; Ivanov, S V; Sedova, I V; Sorokin, S V

    2008-12-31

    The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy. (active media)

  1. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

    SciTech Connect

    Mazur, Eric; Shen, Mengyan

    2013-12-03

    The present invention generally provides a semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  2. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

    DOEpatents

    Mazur, Eric; Shen, Mengyan

    2008-10-28

    The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  3. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

    DOEpatents

    Mazur, Eric; Shen, Mengyan

    2015-09-15

    The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  4. Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate

    DOEpatents

    Mazur, Eric , Shen; Mengyan

    2011-02-08

    The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.

  5. A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm

    NASA Astrophysics Data System (ADS)

    Saarinen, Esa J.; Lyytikäinen, Jari; Ranta, Sanna; Rantamäki, Antti; Saarela, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Okhotnikov, Oleg G.

    2016-03-01

    We report on a semiconductor disk laser emitting 1.5 W of output power at the wavelength of 745 nm via intracavity frequency doubling. The high power level and the < 40 nm tuning range make the laser a promising tool for medical treatments that rely on photosensitizing agents and biomarkers in the transmission window of tissue between 700 and 800 nm. The InP-based gain structure of the laser was wafer-fused with a GaAs-based bottom mirror and thermally managed with an intracavity diamond heat spreader. The structure was pumped with commercial low-cost 980 nm laser diode modules. Laser emission at 1490 nm was frequency-doubled with a bismuth borate crystal that was cut for type I critical phase matching. At the maximum output power, we achieved an optical-to-optical efficiency of 8.3% with beam quality parameter M2 below 1.5. The laser wavelength could be tuned with an intracavity birefringent plate from 720 to 764 nm.

  6. Doped semiconductor nanocrystal based fluorescent cellular imaging probes

    NASA Astrophysics Data System (ADS)

    Maity, Amit Ranjan; Palmal, Sharbari; Basiruddin, Sk; Karan, Niladri Sekhar; Sarkar, Suresh; Pradhan, Narayan; Jana, Nikhil R.

    2013-05-01

    Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity.Doped semiconductor nanocrystals such as Mn doped ZnS, Mn doped ZnSe and Cu doped InZnS, are considered as new classes of fluorescent biological probes with low toxicity. Although the synthesis in high quality of such nanomaterials is now well established, transforming them into functional fluorescent probes remains a challenge. Here we report a fluorescent cellular imaging probe made of high quality doped semiconductor nanocrystals. We have identified two different coating approaches suitable for transforming the as synthesized hydrophobic doped semiconductor nanocrystals into water-soluble functional nanoparticles. Following these approaches we have synthesized TAT-peptide- and folate-functionalized nanoparticles of 10-80 nm hydrodynamic diameter and used them as a fluorescent cell label. The results shows that doped semiconductor nanocrystals can be an attractive alternative for conventional cadmium based quantum dots with low toxicity. Electronic supplementary information available: Characterization details of coating and

  7. Semiconductor ring lasers with delayed optical feedback: low-frequency fluctuations

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Mashal, Lilia; Nguimdo, Romain Modeste; Cornelles-Soriano, Miguel C.; Danckaert, Jan; Verschaffelt, Guy

    2014-05-01

    Semiconductor lasers subject to external feedback are known to exhibit a wide variety of dynamical regimes desired for some applications such as chaos cryptography, random bit generation, and reservoir computing. Low-frequency fluctuations is one of the most frequently encountered regimes. It is characterized by a fast drop in laser intensity followed by a gradual recovery. The duration of this recovery process is irregular and of the order of hundred nanoseconds. The average time between dropouts is much larger than the laser system characteristic time-scales. Semiconductor ring lasers are currently the focus of a rapidly thriving research activity due to their unique feature of directional bistability. They can be employed in systems for all-optical switching, gating, wavelength-conversion functions, and all-optical memories. Semiconductor ring lasers do not require cleaved facets or gratings for optical feedback and are thus particularly suited for monolithic integration. We experimentally and numerically address the issue of low-frequency fluctuations considering a semiconductor ring laser in a feedback configuration where only one directional mode is re-injected into the same directional mode, a so-called single self-feedback. We have observed that the system is very sensitive to the feedback strength and the injection current. In particular, the power dropouts are more regular when the pump current is increased and become less frequent when the feedback strength is increased. In addition, we find two different recovery processes after the power dropouts of the low-frequency fluctuations. The recovery can either occur via pulses or in a stepwise manner. Since low-frequency fluctuations are not specific to semiconductor ring lasers, we expect these recovery processes to appear also in VCSELs and edge-emitting lasers under similar feedback conditions. The numerical simulations also capture these different behaviors, where the representation in the phase space of

  8. Photocurrents in semiconductors and semiconductor quantum wells analyzed by k.p-based Bloch equations

    NASA Astrophysics Data System (ADS)

    Podzimski, Reinold; Duc, Huynh Thanh; Priyadarshi, Shekhar; Schmidt, Christian; Bieler, Mark; Meier, Torsten

    2016-03-01

    Using a microscopic theory that combines k.p band structure calculations with multisubband semiconductor Bloch equations we are capable of computing coherent optically-induced rectification, injection, and shift currents in semiconductors and semiconductor nanostructures. A 14-band k.p theory has been employed to obtain electron states in non-centrosymmetric semiconductor systems. Numerical solutions of the multisubband Bloch equations provide a detailed and transparent description of the dynamics of the material excitations in terms of interband and intersubband polarizations/coherences and occupations. Our approach allows us to calculate and analyze photocurrents in the time and the frequency domains for bulk as well as quantum well and quantum wire systems with various growth directions. As examples, we present theoretical results on the rectification and shift currents in bulk GaAs and GaAs-based quantum wells. Moreover, we compare our results with experiments on shift currents. In the experiments the terahertz radiation emitted from the transient currents is detected via electro-optic sampling. This comparison is important from two perspectives. First, it helps to validate the theoretical model. Second, it allows us to investigate the microscopic origins of interesting features observed in the experiments.

  9. Apertureless scanning microscope probe as a detector of semiconductor laser emission

    SciTech Connect

    Dunaevskiy, Mikhail; Dontsov, Anton; Monakhov, Andrei; Alekseev, Prokhor; Titkov, Alexander; Baranov, Alexei; Girard, Paul; Arinero, Richard; Teissier, Roland

    2015-04-27

    An operating semiconductor laser has been studied using a scanning probe microscope. A shift of the resonance frequency of probe that is due to its heating by laser radiation has been analyzed. The observed shift is proportional to the absorbed radiation and can be used to measure the laser near field or its output power. A periodical dependence of the measured signal has been observed as a function of distance between the probe and the surface of the laser due to the interference of the outgoing and cantilever-reflected waves. Due to the multiple reflections resulting in the interference, the light absorption by the probe cantilever is greatly enhanced compared with a single pass case. Interaction of infrared emission of a diode laser with different probes has been studied.

  10. Interaction of phase and amplitude shaping in an external cavity semiconductor laser

    NASA Astrophysics Data System (ADS)

    Pilny, Rouven H.; Döpke, Benjamin; Balzer, Jan C.; Brenner, Carsten; Klehr, Andreas; Erbert, Götz; Tränkle, Günther; Hofmann, Martin R.

    2016-03-01

    Ultrashort pulse generation with semiconductor lasers poses a promising alternative to currently available femtosecond laser sources like solid state and fiber lasers. Semiconductor devices can be produced inexpensively, are energy efficient and their wavelength can be designed by band gap engineering. Furthermore they feature a tunable repetition rate. Yet pulse duration and peak power of those devices limit their potential for applications so far. However, recent research demonstrated a reduction of the pulse width from 534 fs (full width half maximum) to 216 fs by shaping the spectrally resolved spectral phase and amplitude inside the cavity. The utilized system consisted of a mode-locked edge emitting semiconductor laser diode, a spatial light modulator inside the external cavity to carry out the pulse shaping and an evolutionary algorithm to optimize the phase and amplitude. Here we present the results of separate phase and amplitude shaping as well as their interaction if optimized together at the same time. Furthermore we demonstrate the flexibility of the phase and amplitude shaping with respect to each other. Thus we expect of our system to enable adaptation to a resonator external dispersion.

  11. Dispersion-induced dynamics of coupled modes in a semiconductor laser with saturable absorption

    NASA Astrophysics Data System (ADS)

    O'Callaghan, Finbarr; Osborne, Simon; O'Brien, Stephen

    2014-03-01

    We present an experimental and theoretical study of modal nonlinear dynamics in a specially designed dual-mode semiconductor Fabry-Pérot laser with a saturable absorber. At zero bias applied to the absorber section, we have found that with increasing device current, single-mode self-pulsations evolve into a complex dynamical state where the total intensity experiences regular bursts of pulsations on a constant background. Spectrally resolved measurements reveal that in this state the individual modes of the device can follow highly symmetric but oppositely directed spiraling orbits. Using a generalization of the rate equation description of a semiconductor laser with saturable absorption to the multimode case, we show that these orbits appear as a consequence of the interplay between the material dispersion in the gain and absorber sections of the laser. Our results provide insights into the factors that determine the stability of multimode states in these systems, and they can inform the development of semiconductor mode-locked lasers with tailored spectra.

  12. Solid-state semiconductor optical cryocooler based on CdS nanobelts.

    PubMed

    Li, Dehui; Zhang, Jun; Wang, Xinjiang; Huang, Baoling; Xiong, Qihua

    2014-08-13

    We demonstrate the laser cooling of silicon-on-insulator (SOI) substrate using CdS nanobelts. The local temperature change of the SOI substrate exactly beneath the CdS nanobelts is deduced from the ratio of the Stokes and anti-Stokes Raman intensities from the Si layer on the top of the SOI substrate. We have achieved a 30 and 20 K net cooling starting from 290 K under a 3.8 mW 514 nm and a 4.4 mW 532 nm pumping, respectively. In contrast, a laser heating effect has been observed pumped by 502 and 488 nm lasers. Theoretical analysis based on the general static heat conduction module in the Ansys program package is conducted, which agrees well with the experimental results. Our investigations demonstrate the laser cooling capability of an external thermal load, suggesting the applications of II-VI semiconductors in all-solid-state optical cryocoolers.

  13. Dynamics of carrier recombination in a semiconductor laser structure

    SciTech Connect

    Dzhioev, R. I. Kavokin, K. V.; Kusrayev, Yu. G.; Poletaev, N. K.

    2015-11-15

    Carrier-recombination dynamics is studied by the method of optical orientation at room temperature in the active layer of a laser diode structure. The dependence of the degree of electron-spin orientation on the excitation density is attributed to saturation of the nonradiative-recombination channel. The time of electron capture at recombination centers is determined to be τ{sub e} = 5 × 10{sup –9} s. The temperature of nonequilibrium electrons heated by a He–Ne laser is estimated.

  14. Direct laser fabrication of nanowires on semiconductor surfaces

    NASA Astrophysics Data System (ADS)

    Haghizadeh, Anahita; Yang, Haeyeon

    2016-03-01

    Periodic nanowires are observed from (001) orientation of Si and GaAs when the surfaces are irradiated interferentially by high power laser pulses. These nanowires are self-assembled and can be strain-free while their period is consistent with interference period. The nanowire morphologies are studied by atomic force microscopy. The observed period between nanowires depends on the wavelengths used and interference angle. The nanowire width increases with laser intensity. The narrowest nanowires observed have the width smaller than 20 nm, which is more than 10 times smaller than the interference period.

  15. Terahertz spectroscopy and laser induced infrared emission spectroscopy of nitromethane and optical properties of laser-induced carriers on semiconductor surfaces probed by a 10.6 micron wavelength carbon dioxide laser

    NASA Astrophysics Data System (ADS)

    Toyoda, Yoshimasa

    This work consists of two parts, (1) Terahertz (THz) spectroscopy and laser-induced infrared emission spectroscopy of nitromethane and (2) optical properties of laser-induced carriers on semiconductor surfaces probed by a 10.6 mum wavelength CO2 laser. In the spectroscopic study of nitromethane, previously unreported low resolution rotational-torsional spectra in the THz frequency were obtained by a Bruker IFS 66 v/S Fourier transform spectrometer. The acquired spectra were then compared with a calculation based on a rotational-torsional Hamiltonian which includes centrifugal distortions and rotational-torsional coupling terms. Even though the constants used in the calculation were a result of fitting the microwave spectrum, a discrepancy was observed between the calculated and the experimentally obtained spectrum. In addition, gaseous nitromethane was irradiated with a c.w. CO 2 laser (˜20 W cm-2 intensity, 10.6 mum wavelength) and the laser-induced steady state emission spectrum was analyzed with the IFS 66 v/S spectrometer. The laser-induced emission spectrum showed the characteristics consistent with the laser-heated thermal emission. The decay constant of the emission followed by a 100 ms CO2 laser pulse was measured with a pyroelectric detector and determined to be 0.3 s. In part II, several polycrystalline semiconductors [silicon (Si), germanium (Ge), gallium arsenide (GaAs), and cadmium telluride (CdTe)] were irradiated with a 150 Ps Nd:YAG laser (532/1064 nm wavelength) and induced changes in the optical properties were monitored by measuring the time-resolved reflectance and transmittance of a low power CO2 laser incident on the samples at the Brewster angle. The experimental results showed a sub-nanosecond increase in the reflectance and a longer increase in the absorption as a result of electron-hole pairs (i.e. carriers) generated by absorption of the incident Nd:YAG laser pulses.

  16. Ag-based semiconductor photocatalysts in environmental purification

    NASA Astrophysics Data System (ADS)

    Li, Jiade; Fang, Wen; Yu, Changlin; Zhou, Wanqin; zhu, Lihua; Xie, Yu

    2015-12-01

    Over the past decades, with the fast development of global industrial development, various organic pollutants discharged in water have become a major source of environmental pollution in waste fields. Photocatalysis, as green and environmentally friendly technology, has attracted much attention in pollutants degradation due to its efficient degradation rate. However, the practical application of traditional semiconductor photocatalysts, e.g. TiO2, ZnO, is limited by their weak visible light adsorption due to their wide band gaps. Nowadays, the study in photocatalysts focuses on new and narrow band gap semiconductors. Among them, Ag-based semiconductors as promising visible light-driven photocatalysts have aroused much interesting due to their strong visible light responsibility. Most of Ag-based semiconductors could exhibit high initial photocatalytic activity. But they easy suffer from poor stability because of photochemical corrosion. Design heterojunction, increasing specific surface area, enriching pore structure, regulating morphology, controlling crystal facets, and producing plasmonic effects were considered as the effective strategies to improve the photocatalytic performance of Ag-based photocatalyts. Moreover, combining the superior properties of carbon materials (e.g. carbon quantum dots, carbon nano-tube, carbon nanofibers, graphene) with Ag-based semiconductor could produce high efficient composite photocatalyts.

  17. Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

    NASA Astrophysics Data System (ADS)

    Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

    2015-04-01

    We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

  18. Portable semiconductor disk laser for in vivo tissue monitoring: a platform for the development of clinical applications

    NASA Astrophysics Data System (ADS)

    Aviles-Espinosa, Rodrigo; Filippidis, George; Hamilton, Craig; Malcolm, Graeme; Weingarten, Kurt J.; Südmeyer, Thomas; Barbarin, Yohan; Keller, Ursula; Artigas, David; Loza-Alvarez, Pablo

    2011-07-01

    Long term in vivo observations at large penetration depths and minimum sample disturbance are some of the key factors that have enabled the study of different cellular and tissue mechanisms. The continuous optimization of these aspects is the main driving force for the development of advanced microscopy techniques such as those based on nonlinear effects. Its wide implementation for general biomedical applications is however, limited as the currently used nonlinear microscopes are based on bulky, maintenance-intensive and expensive excitation sources such as Ti:sapphire ultrafast lasers. We present the suitability of a portable (140x240x70 mm) ultrafast semiconductor disk laser (SDL) source, to be used in nonlinear microscopy. The SDL is modelocked by a quantum-dot semiconductor saturable absorber mirror (SESAM). This enables the source to deliver an average output power of 287 mW with 1.5 ps pulses at 500 MHz, corresponding to a peak power of 0.4 kW. The laser center wavelength (965 nm) virtually matches the two-photon absorption cross-section of the widely used Green Fluorescent Protein (GFP). This property greatly relaxes the required peak powers, thus maximizing sample viability. This is demonstrated by presenting two-photon excited fluorescence images of GFP labeled neurons and second-harmonic generation images of pharyngeal muscles in living C. elegans nematodes. Our results also demonstrate that this compact laser is well suited for efficiently exciting different biological dyes. Importantly this non expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices, facilitating its widespread adoption in biomedical applications.

  19. Pulsed laser ablation growth and doping of epitaxial compound semiconductor films

    SciTech Connect

    Lowndes, D.H.; Rouleau, C.M.; Geohegan, D.B.; Budai, J.D.; Poker, D.B.; Puretzky, A.A.; Strauss, M.A.; Pedraza, A.J.; Park, J.W.

    1995-12-01

    Pulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma ``plume.`` However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam assisted surface and/or gas-phase reactions. In this paper the authors describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II-VI, I-III-VI, and column-III nitride materials grown recently in this and other laboratories.

  20. Effect of master oscillator stability over pulse repetition frequency on hybrid semiconductor mode-locked laser

    NASA Astrophysics Data System (ADS)

    Castro Alves, D.; Abreu, Manuel; Cabral, Alexandre; Rebordão, J. M.

    2015-04-01

    Semiconductor mode-locked lasers are a very attractive laser pulse source for high accuracy length metrology. However, for some applications, this kind of device does not have the required frequency stability. Operating the laser in hybrid mode will increase the laser pulse repetition frequency (PRF) stability. In this study it is showed that the laser PRF is not only locked to the master oscillator but also maintains the same level of stability of the master oscillator. The device used in this work is a 10 mm long mode-locked asymmetrical cladding single section InAs/InP quantum dash diode laser emitting at 1580 nm with a pulse repetition frequency of ≈4.37 GHz. The laser nominal stability in passive mode (no external oscillator) shows direct dependence with the gain current and the stability range goes from 10-4 to 10-7. Several oscillators with different stabilities were used for the hybrid-mode operation (with external oscillator) and the resulting mode-locked laser stability compared. For low cost oscillators with low stability, the laser PRF stability achieves a value of 10-7 and for higher stable oscillation source (such as oven controlled quartz oscillators (OXCO)) the stability can reach values up to 10-12 (τ =1 s).

  1. Coherent continuous-wave dual-frequency high-Q external-cavity semiconductor laser for GHz-THz applications.

    PubMed

    Paquet, Romain; Blin, Stéphane; Myara, Mikhaël; Gratiet, Luc Le; Sellahi, Mohamed; Chomet, Baptiste; Beaudoin, Grégoire; Sagnes, Isabelle; Garnache, Arnaud

    2016-08-15

    We report a continuous-wave highly-coherent and tunable dual-frequency laser emitting at two frequencies separated by 30 GHz to 3 THz, based on compact III-V diode-pumped quantum-well surface-emitting semiconductor laser technology. The concept is based on the stable simultaneous operation of two Laguerre-Gauss transverse modes in a single-axis short cavity, using an integrated sub-wavelength-thick metallic mask. Simultaneous operation is demonstrated theoretically and experimentally by recording intensity noises and beat frequency, and time-resolved optical spectra. We demonstrated a >80  mW output power, diffraction-limited beam, narrow linewidth of <300  kHz, linear polarization state (>45  dB), and low intensity noise class-A dynamics of <0.3% rms, thus opening the path to a compact low-cost coherent GHz to THz source development. PMID:27519080

  2. Ten years optically pumped semiconductor lasers: review, state-of-the-art, and future developments

    NASA Astrophysics Data System (ADS)

    Kannengiesser, Christian; Ostroumov, Vasiliy; Pfeufer, Volker; Seelert, Wolf; Simon, Christoph; von Elm, Rüdiger; Zuck, Andreas

    2010-02-01

    Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and reliability opened this pioneering technology access to a wide range of applications such as flow cytometry, confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts, forensic, metrology. This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers. It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be discussed. A survey of key applications will be given.

  3. Novel cavities and functionality in high-power highbrightness semiconductor vertical external cavity surface emitting lasers

    NASA Astrophysics Data System (ADS)

    Hessenius, Chris

    Ever since the first laser demonstration in 1960, applications for laser systems have increased to include diverse fields such as: national defense, biology and medicine, entertainment, imaging, and communications. In order to serve the growing demand, a wide range of laser types including solid-state, semiconductor, gas, and dye lasers have been developed. For most applications it is critical to have lasers with both high optical power and excellent beam quality. This has traditionally been difficult to simultaneously achieve in semiconductor lasers. In the mid 1990's, the advent of an optically pumped semiconductor vertical-external-cavity surface-emitting laser (VECSEL) led to the demonstration of high (multi-watt) output power with near diffraction limited (TEM00) beam quality. Since that time VECSELs covering large wavelength regions have been developed. It is the objective of this dissertation to investigate and explore novel cavity designs which can lead to increased functionality in high power, high brightness VECSELs. Optically pumped VECSELs have previously demonstrated their potential for high power, high brightness operation. In addition, the "open" cavity design of this type of laser makes intracavity nonlinear frequency conversion, linewidth narrowing, and spectral tuning very efficient. By altering the external cavity design it is possible to add additional functionality to this already flexible design. In this dissertation, the history, theory, design, and fabrication are first presented as VECSEL performance relies heavily on the design and fabrication of the chip. Basic cavities such as the linear cavity and v-shaped cavity will be discussed, including the role they play in wavelength tuning, transverse mode profile, and mode stability. The development of a VECSEL for use as a sodium guide star laser is presented including the theory and simulation of intracavity frequency generation in a modified v-cavity. The results show agreement with theory

  4. Frequency stabilization of a semiconductor laser using an external phase modulator.

    PubMed

    Tsuchida, H; Iwasaki, T

    1992-01-01

    A Ti:LiNbO(3) waveguide phase modulator is used as an external frequency stabilizer to reduce the linewidth of an AlGaAs semiconductor laser. A ring interferometer is used as a frequency discriminator, and a wideband servo controller (dc to 30 MHz) is constructed in which feed-forward control of the external phase modulator is combined with feedback control of the injection current. A linewidth of 45 kHz is obtained. PMID:19784226

  5. Average power constraints in AlGaAs semiconductor lasers under pulse-position-modulation conditions

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1986-01-01

    In some optical communications systems there are advantages to using low duty-cycle pulsed modulation formats such as pulse-position-modulation. However, because of intrinsic limitations of AlGaAs semiconductor lasers, the average power that they can deliver in a pulsed mode of operation is lower than in a CW mode. The magnitude of this problem and its implications are analyzed in this letter, and one possible solution is mentioned.

  6. Long-term stabilization of single longitudinal mode in external cavity semiconductor lasers

    SciTech Connect

    Zhang Hanyi; Zhou Jianying; Wu Yuanxing; Li Jian; Pang Zhengwu; Zhou Bingkun

    1988-05-01

    Long-term frequency stabilization of a single longitudinal mode (SLM) external cavity semiconductor laser has been demonstrated by using multisegment composite-cavity configuration and automatic frequency control loop with feedback to control the external cavity length. The time period of mode-hopping free SLM operation has been observed to be more than 24 hours with a frequency shift of about 28 MHz and a linewidth of less than 200 kHz.

  7. Semiconductor-based DNA sequencing of histone modification states.

    PubMed

    Cheng, Christine S; Rai, Kunal; Garber, Manuel; Hollinger, Andrew; Robbins, Dana; Anderson, Scott; Macbeth, Alyssa; Tzou, Austin; Carneiro, Mauricio O; Raychowdhury, Raktima; Russ, Carsten; Hacohen, Nir; Gershenwald, Jeffrey E; Lennon, Niall; Nusbaum, Chad; Chin, Lynda; Regev, Aviv; Amit, Ido

    2013-01-01

    The recent development of a semiconductor-based, non-optical DNA sequencing technology promises scalable, low-cost and rapid sequence data production. The technology has previously been applied mainly to genomic sequencing and targeted re-sequencing. Here we demonstrate the utility of Ion Torrent semiconductor-based sequencing for sensitive, efficient and rapid chromatin immunoprecipitation followed by sequencing (ChIP-seq) through the application of sample preparation methods that are optimized for ChIP-seq on the Ion Torrent platform. We leverage this method for epigenetic profiling of tumour tissues. PMID:24157732

  8. Semiconductor-based DNA sequencing of histone modification states

    PubMed Central

    Cheng, Christine S.; Rai, Kunal; Garber, Manuel; Hollinger, Andrew; Robbins, Dana; Anderson, Scott; Macbeth, Alyssa; Tzou, Austin; Carneiro, Mauricio O.; Raychowdhury, Raktima; Russ, Carsten; Hacohen, Nir; Gershenwald, Jeffrey E.; Lennon, Niall; Nusbaum, Chad; Chin, Lynda; Regev, Aviv; Amit, Ido

    2013-01-01

    The recent development of a semiconductor-based, non-optical DNA sequencing technology promises scalable, low-cost and rapid sequence data production. The technology has previously been applied mainly to genomic sequencing and targeted re-sequencing. Here we demonstrate the utility of Ion Torrent semiconductor-based sequencing for sensitive, efficient and rapid chromatin immunoprecipitation followed by sequencing (ChIP-seq) through the application of sample preparation methods that are optimized for ChIP-seq on the Ion Torrent platform. We leverage this method for epigenetic profiling of tumour tissues. PMID:24157732

  9. High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser.

    PubMed

    Kisel, V E; Rudenkov, A S; Pavlyuk, A A; Kovalyov, A A; Preobrazhenskii, V V; Putyato, M A; Rubtsova, N N; Semyagin, B R; Kuleshov, N V

    2015-06-15

    A high-power, diode-pumped, semiconductor saturable absorber mode-locked Yb(5%):KGW bulk laser was demonstrated with high optical-to-optical efficiency. Average output power as high as 8.8 W with optical-to-optical efficiency of 37.5% was obtained for Nm-polarized laser output with 162 fs pulse duration and 142 nJ pulse energy at a pulse repetition frequency of 62 MHz. For Np polarization, 143 fs pulses with pulse energy of 139 nJ and average output power of up to 8.6 W with optical-to-optical efficiency of 31% were generated. PMID:26076242

  10. Mode-expanded semiconductor laser with tapered-rib adiabatic-following fiber coupler

    SciTech Connect

    Vawter, G.A.; Smith, R.E.; Hou, H.; Wendt, J.R.

    1996-12-01

    Expanded-mode semiconductor lasers are of great interest due to the benefits of reduced far-field divergence and improved coupling efficiency to optical fiber. The authors present a new diode laser using a Tapered-Rib Adiabatic-Following Fiber Coupler (TRAFFiC) to achieve 2D mode expansion without epitaxial regrowth or sharply-defined tips on tapered waveguides. The expanded mode size would allow 0.25 to 1 dB coupling loss to standard telecommunications fiber making smaller-core specialty fibers unnecessary, increasing misalignment tolerance, and eliminating the need for coupling optics.

  11. Ultrafast spectroscopic measurement of the optical and electronic properties of narrow-band-gap semiconductor laser materials

    NASA Astrophysics Data System (ADS)

    Anson, Scott Allen

    1999-12-01

    Semiconductor lasers operating in the mid-infrared region of the spectrum (2-5 μm) are of interest for a variety of potential applications and therefore are currently the focus of intense research and development. One of the main impediments to the development of these lasers is a non-radiative loss process know as Auger recombination. It is this loss mechanism that leads to the relatively low temperature operation of these lasers. In addition to Auger recombination, there is an interest in suppressing laser which can lead to the degradation and catastrophic failure of devices at high output powers. The tendency for filament formation is suppressed in materials with small linewidth enhancement factors. To improve the performance of these semiconductor lasers, band structure engineering techniques have been employed to the design of narrow band-gap III-V semiconductor active regions based on GaInSb/InAs superlattices. These superlattice structures are designed to have favorable material properties that allow for the suppression of Auger recombination and a reduction of the linewidth enhancement factor. In addition to Auger recombination and the linewidth enhancement factor, a number of other optical and electronic properties in these superlattice structures are also of interest, including the differential gain, differential index, Shockley-Read-Hall recombination, and in-plane carrier diffusion. In this dissertation measurements of the optical and electronic properties in these structures conducted using two ultrafast spectroscopic techniques, time-resolved differential transmission and photogenerated transient grating is discussed. These ultrafast spectroscopic measurements are performed using 140 fs pump pulses from a mode-locked Ti:sapphire laser operating at 840 nm and 170 fs probe pulses from a synchronously-pumped optical parametric oscillator which is tunable between 2.65 to 4.4 μm. The measurements show that these superlattices have favorable material

  12. Near infrared laser stimulation of human neural stem cells into neurons on graphene nanomesh semiconductors.

    PubMed

    Akhavan, Omid; Ghaderi, Elham; Shirazian, Soheil A

    2015-02-01

    Reduced graphene oxide nanomeshes (rGONMs), as p-type semiconductors with band-gap energy of ∼ 1 eV, were developed and applied in near infrared (NIR) laser stimulation of human neural stem cells (hNSCs) into neurons. The biocompatibility of the rGONMs in growth of hNSCs was found similar to that of the graphene oxide (GO) sheets. Proliferation of the hNSCs on the GONMs was assigned to the excess oxygen functional groups formed on edge defects of the GONMs, resulting in superhydrophilicity of the surface. Under NIR laser stimulation, the graphene layers (especially the rGONMs) exhibited significant cell differentiations, including more elongations of the cells and higher differentiation of neurons than glia. The higher hNSC differentiation on the rGONM than the reduced GO (rGO) was assigned to the stimulation effects of the low-energy photoexcited electrons injected from the rGONM semiconductors into the cells, while the high-energy photoelectrons of the rGO (as a zero band-gap semiconductor) could suppress the cell proliferation and/or even cause cell damages. Using conventional heating of the culture media up to ∼ 43 °C (the temperature typically reached under the laser irradiation), no significant differentiation was observed in dark. This further confirmed the role of photoelectrons in the hNSC differentiation.

  13. Gigahertz dual-comb modelocked diode-pumped semiconductor and solid-state lasers

    NASA Astrophysics Data System (ADS)

    Link, S. M.; Mangold, M.; Golling, M.; Klenner, A.; Keller, U.

    2016-03-01

    We present a simple approach to generate simultaneously two gigahertz mode-locked pulse trains from a single gain element. A bi-refringent crystal in the laser cavity splits the one cavity beam into two cross-polarized and spatially separated beams. This polarization-duplexing is successfully demonstrated for both a semiconductor disk laser (i.e. MIXSEL) and a diode-pumped solid-state Nd:YAG laser. The beat between the two beams results in a microwave frequency comb, which represents a direct link between the terahertz optical frequencies and the electronically accessible microwave regime. This dual-output technique enables compact and cost-efficient dual-comb lasers for spectroscopy applications.

  14. Long wavelength semiconductor lasers development for infrared heterodyne applications

    NASA Technical Reports Server (NTRS)

    Feit, Zeev; Kostyk, Douglas

    1989-01-01

    PbSnTe single crystals were grown in a new 3 zone furnace. Molecular beam epitaxy (MBE) growth parameters have been established, including beam flux vs. temperature, and growth rates and dopant vs. PbTe flux ratios for the various effusion sources involved. Lattice matching studies were conducted and doping studies were completed. Broad area Pb(1-x)Sn(x)Te double heterostructure lasers were fabricated with active layer compositions up to x equals 0.04 at percent Sn in the active layers. Electrical and optical test data are presented.

  15. Subpicometer Length Measurement Using Semiconductor Laser Tracking Frequency Gauge

    NASA Technical Reports Server (NTRS)

    Thapa, Rajesh; Phillips, James D.; Rocco, Emanuele; Reasenburg, Robert D.

    2011-01-01

    We have demonstrated heretofore unattained distance precision of 0:14pm (2pm) incremental and 14nm (2.9 micrometers) absolute in a resonant (nonresonant) interferometer at an averaging time of 1 s, using inexpensive telecommunications diode lasers. We have controlled the main source of error, that due to spurious reflection and the resulting amplitude modulation. In the resonant interferometer, absolute distance precision is well under lambda/6. Therefore, after an interruption, an absolute distance measurement can be used to return to the same interferometer order.

  16. Electrical and optical study of semiconductor laser diodes and materials

    NASA Technical Reports Server (NTRS)

    Albin, Sacharia

    1987-01-01

    The characterization of a 2-D diode laser array from McDonald Douglas has been completed. The array consisted of 8 linear arrays of approximately 11 mm x 0.18 mm. Each array has between 7 and 8 diodes per mm. The threshold current is approximately 15 amps. The power output vs drive current (above threshold) of the array was measured. A peak power of 50 W was obtained at a drive current of 26 amps. Its far field pattern has a double lobe.

  17. Tailored surface-enhanced Raman nanopillar arrays fabricated by laser-assisted replication for biomolecular detection using organic semiconductor lasers.

    PubMed

    Liu, Xin; Lebedkin, Sergei; Besser, Heino; Pfleging, Wilhelm; Prinz, Stephan; Wissmann, Markus; Schwab, Patrick M; Nazarenko, Irina; Guttmann, Markus; Kappes, Manfred M; Lemmer, Uli

    2015-01-27

    Organic semiconductor distributed feedback (DFB) lasers are of interest as external or chip-integrated excitation sources in the visible spectral range for miniaturized Raman-on-chip biomolecular detection systems. However, the inherently limited excitation power of such lasers as well as oftentimes low analyte concentrations requires efficient Raman detection schemes. We present an approach using surface-enhanced Raman scattering (SERS) substrates, which has the potential to significantly improve the sensitivity of on-chip Raman detection systems. Instead of lithographically fabricated Au/Ag-coated periodic nanostructures on Si/SiO2 wafers, which can provide large SERS enhancements but are expensive and time-consuming to fabricate, we use low-cost and large-area SERS substrates made via laser-assisted nanoreplication. These substrates comprise gold-coated cyclic olefin copolymer (COC) nanopillar arrays, which show an estimated SERS enhancement factor of up to ∼ 10(7). The effect of the nanopillar diameter (60-260 nm) and interpillar spacing (10-190 nm) on the local electromagnetic field enhancement is studied by finite-difference-time-domain (FDTD) modeling. The favorable SERS detection capability of this setup is verified by using rhodamine 6G and adenosine as analytes and an organic semiconductor DFB laser with an emission wavelength of 631.4 nm as the external fiber-coupled excitation source.

  18. Modeling pulsed-laser melting of embedded semiconductor nanoparticles

    SciTech Connect

    Sawyer, C.A.; Guzman, J.; Boswell-Koller, C.N.; Sherburne, M.P.; Mastandrea, J.P.; Bustillo, K.C.; Ager III, J.W.; Haller, E.E.; Chrzan, D.C.

    2011-05-18

    Pulsed-laser melting (PLM) is commonly used to achieve a fast quench rate in both thin films and nanoparticles. A model for the size evolution during PLM of nanoparticles confined in a transparent matrix, such as those created by ion-beam synthesis, is presented. A self-consistent mean-field rate equations approach that has been used successfully to model ion beam synthesis of germanium nanoparticles in silica is extended to include the PLM process. The PLM model includes classical optical absorption, multiscale heat transport by both analytical and finite difference methods, and melting kinetics for confined nanoparticles. The treatment of nucleation and coarsening behavior developed for the ion beam synthesis model is modified to allow for a non-uniform temperature gradient and for interacting liquid and solid particles with different properties. The model allows prediction of the particle size distribution after PLM under various laser fluences, starting from any particle size distribution including as-implanted or annealed simulated samples. A route for narrowing the size distribution of embedded nanoparticles is suggested, with simulated distribution widths as low as 15% of the average size.

  19. Modeling pulsed-laser melting of embedded semiconductor nanoparticles

    NASA Astrophysics Data System (ADS)

    Sawyer, C. A.; Guzman, J.; Boswell-Koller, C. N.; Sherburne, M. P.; Mastandrea, J. P.; Bustillo, K. C.; Ager, J. W.; Haller, E. E.; Chrzan, D. C.

    2011-11-01

    Pulsed-laser melting (PLM) is commonly used to achieve a fast quench rate in both thin films and nanoparticles. A model for the size evolution during PLM of nanoparticles confined in a transparent matrix, such as those created by ion-beam synthesis, is presented. A self-consistent mean-field rate equations approach that has been used successfully to model ion beam synthesis of germanium nanoparticles in silica is extended to include the PLM process. The PLM model includes classical optical absorption, multiscale heat transport by both analytical and finite difference methods, and melting kinetics for confined nanoparticles. The treatment of nucleation and coarsening behavior developed for the ion beam synthesis model is modified to allow for a nonuniform temperature gradient and for interacting liquid and solid particles with different properties. The model allows prediction of the particle size distribution after PLM under various laser fluences, starting from any particle size distribution including as-implanted or annealed simulated samples. A route for narrowing the size distribution of embedded nanoparticles is suggested, with simulated distribution widths as low as 15% of the average size.

  20. Anisotropy-based crystalline oxide-on-semiconductor material

    DOEpatents

    McKee, Rodney Allen; Walker, Frederick Joseph

    2000-01-01

    A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

  1. Two semiconductor ring lasers coupled by a single-waveguide for optical memory operation

    NASA Astrophysics Data System (ADS)

    Van der Sande, Guy; Coomans, Werner; Gelens, Lendert

    2014-05-01

    Semiconductor ring lasers are semiconductor lasers where the laser cavity consists of a ring-shaped waveguide. SRLs are highly integrable and scalable, making them ideal candidates for key components in photonic integrated circuits. SRLs can generate light in two counterpropagating directions between which bistability has been demonstrated. Hence, information can be coded into the emission direction. This bistable operation allows SRLs to be used in systems for all-optical switching and as all-optical memories. For the demonstration of fast optical flip-flop operation, Hill et al. [Nature 432, 206 (2004)] fabricated two SRLs coupled by a single waveguide, rather than a solitary SRL. Nevertheless, the literature shows that a single SRL can also function perfectly as an all-optical memory. In our recent paper [W. Coomans et al., Phys. Rev. A 88, 033813, (2013)], we have raised the question whether coupling two SRLs to realize a single optical memory has any advantage over using a solitary SRL, taking into account the obvious disadvantage of a doubled footprint and power consumption. To provide the answer, we have presented in that paper a numerical study of the dynamical behavior of semiconductor ring lasers coupled by a single bus waveguide, both when weakly coupled and when strongly coupled. We have provided a detailed analysis of the multistable landscape in the coupled system, analyzed the stability of all solutions and related the internal dynamics in the individual lasers to the field effectively measured at the output of the waveguide. We have shown which coupling phases generally promote instabilities and therefore need to be avoided in the design. Regarding all-optical memory operation, we have demonstrated that there is no real advantage for bistable memory operation compared to using a solitary SRL. An increased power suppression ratio has been found to be mainly due to the destructive interference of the SRL fields at the low power port. Also

  2. 95 GHz millimeter wave signal generation using an arrayed waveguide grating dual wavelength semiconductor laser.

    PubMed

    Carpintero, Guillermo; Rouvalis, Efthymios; Ławniczuk, Katarzyna; Fice, Martyn; Renaud, Cyril C; Leijtens, Xaveer J M; Bente, Erwin A J M; Chitoui, Mourad; Van Dijk, Frederic; Seeds, Alwyn J

    2012-09-01

    We report the generation of a 95 GHz carrier frequency by optical heterodyning of two wavelengths from adjacent channels from an arrayed waveguide grating-based multiwavelength laser. The extended cavity structure of the device provides low phase noise and narrow optical linewidth, further enhanced by the intracavity filter effect of the arrayed waveguide grating. We demonstrate that the generated RF beat note, at 95 GHz, has a -3  dB linewidth of 250 kHz. To the best of our knowledge, this is the narrowest RF linewidth generated from a free-running dual-wavelength semiconductor laser. The device is realized as a photonic integrated circuit using active-passive integration technology, and fabricated on a multiproject wafer run, constituting a novel approach for a compact, low-cost dual-wavelength heterodyne source.

  3. Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz.

    PubMed

    Spiessberger, Stefan; Schiemangk, Max; Sahm, Alexander; Wicht, Andreas; Wenzel, Hans; Peters, Achim; Erbert, Götz; Tränkle, Günther

    2011-04-11

    We demonstrate a compact, narrow-linewidth, high-power, micro-integrated semiconductor-based master oscillator power amplifier laser module which is implemented on a footprint of 50 x 10 mm(2). A micro-isolator between the oscillator and the amplifier suppresses optical feedback. The oscillator is a distributed Bragg reflector laser optimized for narrow-linewidth operation and the amplifier consists of a ridge waveguide entry and a tapered amplifier section. The module features stable single-mode operation with a FWHM linewidth of only 100 kHz and an intrinsic linewidth as small as 3.6 kHz for an output power beyond 1 W. PMID:21503020

  4. Dynamics of a passively mode-locked semiconductor laser subject to dual-cavity optical feedback

    NASA Astrophysics Data System (ADS)

    Jaurigue, Lina; Nikiforov, Oleg; Schöll, Eckehard; Breuer, Stefan; Lüdge, Kathy

    2016-02-01

    We study the influence of dual-cavity optical feedback on the emission dynamics and timing stability of a passively mode-locked semiconductor laser using a delay differential equation model and verify the timing stability results by an initial experiment. By bifurcation analysis in dependence of the feedback delay times and feedback strength bistability, quasiperiodic and chaotic dynamics, as well as fundamental mode-locking are investigated, yielding a comprehensive overview on the nonlinear emission dynamics arising due to dual-cavity optical feedback. Optimum self-locking ranges for improving the timing stability by dual-cavity optical feedback are identified. A timing jitter reduction and an increase of the repetition rate tuning range of up to a factor of three, compared with single-cavity feedback, are predicted for the parameter ranges investigated. Improved timing stability on short and long timescales is predicted for dual-cavity feedback through the suppression of noise-induced fluctuations. Based on the numerical predictions, experimentally, a maximum timing jitter reduction up to a factor of 180 is found, accompanied by a side-band reduction by a factor of 58 dB, when both feedback cavities are resonant.

  5. Multiphysics modeling of non-linear laser-matter interactions for optically active semiconductors

    NASA Astrophysics Data System (ADS)

    Kraczek, Brent; Kanp, Jaroslaw

    Development of photonic devices for sensors and communications devices has been significantly enhanced by computational modeling. We present a new computational method for modelling laser propagation in optically-active semiconductors within the paraxial wave approximation (PWA). Light propagation is modeled using the Streamline-upwind/Petrov-Galerkin finite element method (FEM). Material response enters through the non-linear polarization, which serves as the right-hand side of the FEM calculation. Maxwell's equations for classical light propagation within the PWA can be written solely in terms of the electric field, producing a wave equation that is a form of the advection-diffusion-reaction equations (ADREs). This allows adaptation of the computational machinery developed for solving ADREs in fluid dynamics to light-propagation modeling. The non-linear polarization is incorporated using a flexible framework to enable the use of multiple methods for carrier-carrier interactions (e.g. relaxation-time-based or Monte Carlo) to enter through the non-linear polarization, as appropriate to the material type. We demonstrate using a simple carrier-carrier model approximating the response of GaN. Supported by ARL Materials Enterprise.

  6. Comparison of light emitting diodes and semiconductor laser inducing photodynamic therapy of cancer cells in vitro

    NASA Astrophysics Data System (ADS)

    Macecek, Jaroslav; Kolarova, Hana; Bajgar, Robert; Strnad, Miroslav

    2007-03-01

    The goal of anticancer therapy is achievement of balance between destruction of tumour cells and tissues and conservation of physiological functions of noncancer cells. Photodynamic therapy (PDT) is one of novel alternative treatment modality of malignant neoplasms. This method is based on cytotoxic action of excited sensitizers in the oxygen-rich environment. Sensitizers bound to cells and are excited by light source identical to absorption maximum of sensitizer. Photodynamic reactions lead to production of reactive oxygen species (ROS), which cause necrosis or apoptosis of cancer cells. The objective of our work was to analyse of phototoxicity in the sense of DNA damage in cancer cells after PDT by single cell gell electrophoresis (SCGE, comet assay) using ZnTPPS4 (zinc(II)-5,10,15,20-tetrakis(4-sulphonatophenyl) porphyrine and disulfonated chloraluminium phthalocyanine ClAlPcS II as sensitizers. Violet light emitting diodes (LEDs; 1.5 mJ.cm -2.s -1; 418 nm) and semiconductor laser (50mW; 675 nm) were used as sources of radiation. Level of DNA fragmentation was detected after application of different light doses.

  7. Dilute ferromagnetic semiconductors prepared by the combination of ion implantation with pulse laser melting

    NASA Astrophysics Data System (ADS)

    Zhou, Shengqiang

    2015-07-01

    Combining semiconducting and ferromagnetic properties, dilute ferromagnetic semiconductors (DFS) have been under intensive investigation for more than two decades. Mn doped III-V compound semiconductors have been regarded as the prototype of DFS from both experimental and theoretic investigations. The magnetic properties of III-V:Mn can be controlled by manipulating free carriers via electrical gating, as for controlling the electrical properties in conventional semiconductors. However, the preparation of DFS presents a big challenge due to the low solubility of Mn in semiconductors. Ion implantation followed by pulsed laser melting (II-PLM) provides an alternative to the widely used low-temperature molecular beam epitaxy (LT-MBE) approach. Both ion implantation and pulsed-laser melting occur far enough from thermodynamic equilibrium conditions. Ion implantation introduces enough dopants and the subsequent laser pulse deposit energy in the near-surface region to drive a rapid liquid-phase epitaxial growth. Here, we review the experimental study on preparation of III-V:Mn using II-PLM. We start with a brief description about the development of DFS and the physics behind II-PLM. Then we show that ferromagnetic GaMnAs and InMnAs films can be prepared by II-PLM and they show the same characteristics of LT-MBE grown samples. Going beyond LT-MBE, II-PLM is successful to bring two new members, GaMnP and InMnP, into the family of III-V:Mn DFS. Both GaMnP and InMnP films show the signature of DFS and an insulating behavior. At the end, we summarize the work done for Ge:Mn and Si:Mn using II-PLM and present suggestions for future investigations. The remarkable advantage of II-PLM approach is its versatility. In general, II-PLM can be utilized to prepare supersaturated alloys with mismatched components.

  8. Electron microscopy of life-tested semiconductor laser diodes

    PubMed

    Vanzi; Bonfiglio; Magistrali; Salmini

    2000-06-01

    Electron Microscopy on life-tested 980 nm SL SQW InGaAs/AlGaAs laser diodes is able to find and analyze lattice defects responsible for the detected failures. Anyway, the origin and evolution of those defects remains questionable. Only the comparative analysis of life-test measurements, EBIC-FIB/TEM images, and charge-transport physics is able to point out a coherent framework for complete decoding of the failure kinetics. Minority-carrier diffusion and their enhanced recombination at defective lattice points are indicated, as the energy supply required for defect reaction and growth. The rules of charge diffusion drive both the reaction model, the interpretation of EBIC images and the expected electrical and optical effects. Strain release at the ultimate propagation of defects into the strained InGaAs quantum layer is then easily related to the final state of the failed devices.

  9. Experimental mapping of nonlinear dynamics in synchronized coupled semiconductor laser networks

    NASA Astrophysics Data System (ADS)

    Argyris, Apostolos; Bourmpos, Michail; Syvridis, Dimitris

    2015-05-01

    The potential of conventional semiconductor lasers to generate complex and chaotic dynamics at a bandwidth that extends up to tens of GHz turns them into useful components in applications oriented to sensing and security. Specifically, latest theoretical and experimental works have demonstrated the capability of mutually coupled semiconductor lasers to exhibit a joint behaviour under various conditions. In an uncoupled network consisting of N similar SLs - representing autonomous nodes in the network - each node emits an optical signal of various dynamics depending on its biasing conditions and internal properties. These nodes remain unsynchronized unless appropriate coupling and biasing conditions apply. A synchronized behaviour can be in principle observed in sub-groups of lasers or in the overall laser network. In the present work, experimental topologies that employ eight SLs, under diverse biasing and coupling conditions, are built and investigated. The deployed systems incorporate off-the-shelf fiber-optic communications components operating at the 1550nm spectral window. The role of emission wavelength detuning of each participating node in the network - at GHz level - is evaluated.

  10. Multi-wavelength mid-infrared micro-spectral imaging using semiconductor lasers.

    PubMed

    Guo, B; Wang, Y; Peng, C; Luo, G P; Le, H Q

    2003-07-01

    Infrared (IR, 3-12-microm) microscopic spectral imaging is an important analytical technique. Many current instruments employ thermal IR light sources, which suffer the problem of low brightness and high noise. This paper evaluates the system engineering merit in using semiconductor lasers, which offer orders-of-magnitude-higher power, brightness, and lower noise. A microscopic spectral imaging system using semiconductor lasers (quantum cascade) as illuminators, and focal plane array detectors demonstrated a high signal-to-noise ratio (> 20 dB) at video frame rate for a large illuminated area. The comparative advantages of laser vs. thermal light source are analyzed and demonstrated. Microscopic spectral imaging with fixed-wavelength and tunable lasers of 4.6-, 5.1-, 6-, and 9.3-microm wavelength was applied to a number of representative samples that consist of biological tissues (plant and animal), solid material (a stack of laminated polymers), and liquid chemical (benzene). Transmission spectral images with approximately 30-dB dynamic range were obtained with clear evidence of spectral features for different samples. The potential of more advanced systems with a wide coverage of spectral bands is discussed.

  11. Effects of modulation in the complex dynamics of a semiconductor laser with feedback

    NASA Astrophysics Data System (ADS)

    Aragoneses, Andrés.; Sorrentino, Taciano; Quintero, Carlos A.; Perrone, Sandro; Torrent, M. C.; Masoller, Cristina

    2016-04-01

    Semiconductor lasers under external perturbations can manifest a broad variety of complex dynamics in their output power, from periodicity to high dimensional chaos. One of their characteristic behaviors, when submitted to optical feedback, is their excitability. These optical excitable devices, that mimic neuronal behavior, can serve as building-blocks for novel, brain-inspired information processing systems. Neuronal systems represent and process the information of a weak external input through correlated electrical spikes. Semiconductor lasers with low to moderate optical feedback, i.e. in the low frequency fluctuations (LFF) regime, display optical spikes with intrinsic temporal correlations, similar to those of biological neurons. Here we study the laser optical spiking dynamics under the influence of direct pump current modulation, focusing on the influence of the modulation frequency and amplitude. We characterize time correlations in the sequence of optical spikes by using symbolic ordinal analysis. This powerful tool allows detecting symbolic patterns in the laser output, and to quantify the effect of the frequency and amplitude of the modulation on the patterns probabilities. The experimental results are in good qualitative agreement with simulations of the Lang and Kobayashi model.

  12. Effects of modulation in the complex dynamics of a semiconductor laser with feedback

    NASA Astrophysics Data System (ADS)

    Aragoneses, Andrés.; Sorrentino, Taciano; Quintero, Carlos A.; Perrone, Sandro; Torrent, M. C.; Masoller, Cristina

    2016-04-01

    Semiconductor lasers under external perturbations can manifest a broad variety of complex dynamics in their output power, from periodicity to high dimensional chaos. One of their characteristic behaviors, when submitted to optical feedback, is their excitability. These optical excitable devices, that mimic neuronal behavior, can serve as building-blocks for novel, brain-inspired information processing systems. Neuronal systems represent and process the information of a weak external input through correlated electrical spikes. Semiconductor lasers with low to moderate optical feedback, i.e. in the low frequency fluctuations (LFF) regime, display optical spikes with intrinsic temporal correlations, similar to those of biological neurons. Here we study the laser optical spiking dynamics under the influence of direct pump current modulation, focusing on the influence of the modulation frequency and amplitude. We characterize time correlations in the sequence of optical spikes by using symbolic ordinal analysis. This powerful tool allows detecting symbolic patterns in the laser output, and to quantify the effect of the frequency and amplitude of the modulation on the patterns probabilities. The experimental results are in good qualitative agreement with simulations of the Lang and Kobayashi model.

  13. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    SciTech Connect

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL`s). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL`s which are appropriate for material processing applications, low and intermediate average power DPSSL`s are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications.

  14. Relaxation dynamics of femtosecond-laser-induced temperature modulation on the surfaces of metals and semiconductors

    NASA Astrophysics Data System (ADS)

    Levy, Yoann; Derrien, Thibault J.-Y.; Bulgakova, Nadezhda M.; Gurevich, Evgeny L.; Mocek, Tomáš

    2016-06-01

    Formation of laser-induced periodic surface structures (LIPSS) is a complicated phenomenon which involves periodic spatial modulation of laser energy absorption on the irradiated surface, transient changes in optical response, surface layer melting and/or ablation. The listed processes strongly depend on laser fluence and pulse duration as well as on material properties. This paper is aimed at studying the spatiotemporal evolution of a periodic modulation of the deposited laser energy, once formed upon irradiation of metal (Ti) and semiconductor (Si) surfaces. Assuming that the incoming laser pulse interferes with a surface electromagnetic wave, the resulting sinusoidal modulation of the absorbed laser energy is introduced into a two-dimensional two-temperature model developed for titanium and silicon. Simulations reveal that the lattice temperature modulation on the surfaces of both materials following from the modulated absorption remains significant for longer than 50 ps after the laser pulse. In the cases considered here, the partially molten phase exists 10 ps in Ti and more than 50 ps in Si, suggesting that molten matter can be subjected to temperature-driven relocation toward LIPSS formation, due to the modulated temperature profile on the material surfaces. Molten phase at nanometric distances (nano-melting) is also revealed.

  15. Laser drilling of via micro-holes in single-crystal semiconductor substrates using a 1070nm fibre laser with millisecond pulse widths

    NASA Astrophysics Data System (ADS)

    Maclean, Jessica O.; Hodson, Jonathan R.; Voisey, K. T.

    2015-07-01

    Micro-machining of semiconductors is relevant to fabrication challenges within the semiconductor industry. For via holes for solar cells, laser drilling potentially avoids deep plasma etching which requires sophisticated equipment and corrosive, high purity gases. Other applications include backside loading of cold atoms into atom chips and ion traps for quantum physics research, for which holes through the semiconductor substrate are needed. Laser drilling, exploiting the melt ejection material removal mechanism, is used industrially for drilling hard to machine materials such as superalloys. Lasers of the kind used in this work typically form holes with diameters of 100's of microns and depths of a few millimetres in metals. Laser drilling of semiconductors typically uses short pulses of UV or long wavelength IR to achieve holes as small as 50 microns. A combination of material processes occurs including laser absorption, heating, melting, vaporization with vapour and dust particle ejection and resolidification. An investigation using materials with different fundamental material parameters allows the suitability of any given laser for the processing of semiconductors to be determined. We report results on the characterization of via holes drilled using a 2000 W maximum power 1070 nm fibre laser with 1-20 ms pulses using single crystal silicon, gallium arsenide and sapphire. Holes were characterised in cross-section and plan view. Significantly, relatively long pulses were effective even for wide bandgap substrates which are nominally transparent at 1070 nm. Examination of drilled samples revealed holes had been successfully generated in all materials via melt ejection.

  16. Laser qualification for the Semiconductor Laser Intersatellite Link Experiment (SILEX) program

    NASA Astrophysics Data System (ADS)

    Craig, Richard R.; Li, Benjamin; Chan, Benny

    1994-08-01

    The SDL-5400 series commercial AlGaAs laser diode was characterized and screened for potential use as communication laser in the SILEX program. The lasers were initially tested through environmental extremes and for vacuum reliability to obtain preliminary indications that the laser was suitable to the requirement. Potential flight lasers were then built and screened for use. Endurance testing of samples from the potential flight lot has been completed.

  17. Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications

    PubMed Central

    Bilenca, A.; Yun, S. H.; Tearney, G. J.; Bouma, B. E.

    2009-01-01

    Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift–broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging. PMID:16544615

  18. Hopf bifurcation to square-wave switching in mutually coupled semiconductor lasers.

    PubMed

    Sciamanna, M; Virte, M; Masoller, C; Gavrielides, A

    2012-07-01

    Using advanced continuation techniques for dynamical systems, we elucidate the bifurcations leading to asymptotically stable square-wave pulsing and polarization mode switching in semiconductor lasers with mutual time-delayed and polarization rotating coupling. We find that the increase of coupling strength leads to a cascade of Hopf bifurcations on a mixed-mode steady state up to a transcritical bifurcation on a so-called pure-mode steady state where both lasers emit with the injected polarization state. From these successive Hopf bifurcations emerge time-periodic solutions that have a period close to the laser relaxation oscillation for weak coupling but a period close to twice the time delay for large coupling strength. The wave form of the time-periodic solutions also evolves from harmonic pulsing up to square-wave pulsing as has been observed recently in experiments.

  19. Harmonic modulation of radiation of an external-feedback semiconductor laser

    SciTech Connect

    Sukharev, Aleksandr G; Napartovich, A P

    2007-02-28

    The appearance of the harmonic modulation regime at the Hopf bifurcation point is described analytically for a delayed-feedback semiconductor laser. The second-order delay differential equation with complex coefficients is derived. The frequency of oscillations appearing at the Hopf bifurcation point is determined by the solution of two relatively simple transcendental equations, from which the bifurcation point itself is found. These equations contain dependences on all the control parameters of the problem. The exact upper and lower limits of the oscillation frequency are found. A comparison with numerical results shows that the modulation frequency is preserved almost constant in a broad range of feedback phases. A procedure is proposed for determining the parameters of the laser providing the presence of bifurcations with a passage to oscillations with the specified frequency. The results obtained in the paper are of interest for WDM communication systems. (control of laser radiation parameters)

  20. High-order diffraction gratings for high-power semiconductor lasers

    SciTech Connect

    Vasil'eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; Leshko, A. Yu.; Petrunov, A. N.; Pikhtin, N. A.; Rastegaeva, M. G.; Sokolova, Z. N. Shashkin, I. S.; Tarasov, I. S.

    2012-02-15

    A deep diffraction grating with a large period ({approx}2 {mu}m) within one of the cladding layers is proposed for the implementation of selective feedback in a semiconductor laser. Frequency dependences of reflectance in the 12th diffraction order for rectangular, triangular, and trapezoidal diffraction gratings are calculated. It is shown that the maximum reflectance of the waveguide mode is attained using a rectangular or trapezoidal grating {approx}2 {mu}m deep in the laser structure. Deep trapezoidal diffraction gratings with large periods are fabricated in the Al{sub 0.3}Ga{sub 0.7}As cladding layer of a GaAs/AlGaAs laser structure using photolithography and reactive ion etching.

  1. High-stability optical components for semiconductor laser intersatellite link experiment (SILEX) project

    NASA Astrophysics Data System (ADS)

    Lepretre, Francois

    1994-09-01

    Within the framework of a MATRA MARCONI SPACE FRANC contract for the European Space Agency, MATRA DEFENSE - DOD/UAO have developed, produced and tested 9 laser diode collimators, 52 optical components (anamorphoser, mirrors, dichroic splitters, redundancy module) and 9 interferential filters. All these space equipments must be integrated into the optical head of the SILEX (Semi-conductor Laser Intersatellite Link Experiment) bench. The SILEX experiment consists in transferring data from a low altitude satellite (SPOT 4) to a satellite in geostationary orbit (ARTEMIS) via beam generated by a laser diode (60 mW Cw). Very low emitted flux and long distance between the two satellites gives rise to the following technical difficulties: high angular (1 (mu) rad) and transverse stability requirements, requirement for high transmission and high rejection narrow band filters, in order to differentiate the transmit and receive channels, necessity of a very good optical wavefront, wavelength range 815-825 nm, 843-853 nm.

  2. Bragg fibre grating semiconductor lasers with the narrow emission spectrum in the 1530 - 1560-nm region

    SciTech Connect

    Duraev, V P; Nedelin, E T; Nedobyvailo, T P; Sumarokov, M A; Klimov, K I

    2001-06-30

    The design of a cw single-frequency semiconductor laser with a Bragg fibre grating in a composite resonator emitting at a wavelength of 1553.6 nm and intended for fibre-optic communication systems with wavelength-division multiplexing is descried and its main parameters are presented. It is shown that the suppression of longitudinal eigenmodes of the laser diode caused by the antireflection coating deposited on the internal face of the crystal leads to lasing on a single longitudinal mode of the composite resonator. The lasing line half-width is no more than 0.1 nm and the lasing wavelength, which corresponds to the Bragg wavelength of a fibre grating, remains stable in the dynamic mode. (lasers, active media)

  3. Use of a laser for the spectral analysis of semiconductor materials

    NASA Technical Reports Server (NTRS)

    Karyakin, A. V.; Akhmanova, M. V.; Kaygorodov, V. A.

    1978-01-01

    Conventional applications of lasers for emission spectroscopy involving direct recording of light pulses of an evaporated substance emitted from the sample under the action of the laser light (direct method) were examined. Use of the laser light for conversion of the substance to a vapor and feeding the vapors into the conventional source of emission such as arc, sparks, etc. (the so called 2 stage excitation) were studied for use in the spectral analysis, of semiconductors. The direct method has a high reproducibility (5-7%); the 2 stage excitation method, characterized by the same intensity as obtained with the conventional constant, current arc, has better reproducibility than the direct method (15-20%). Both methods can be used for the analysis of samples without prior preparation. Advantages of these methods are the elimination of impurities picked up during trituration of the samples into powders and shortening of the analytical procedures.

  4. Numerical analysis of frequency chirp in strongly injection-locked semiconductor ring lasers

    NASA Astrophysics Data System (ADS)

    Chu, Fei-Hung; Smolyakov, Gennady A.; Osinski, Marek

    2014-03-01

    Frequency chirp simulations based on rate equation analysis are performed for strongly injection-locked ring lasers for applications in optical communication and rf photonics. Different scenarios are explored and compared, including weak injection of a single ring laser, strong injection of a single ring laser, and strong injection of cascaded ring lasers. Together with previously published results, these simulations confirm that the novel whistle-geometry ring laser scheme can provide, especially when modulation signal is applied to both ring lasers in the cascaded arrangement, a greatly improved performance in terms of modulation response and frequency chirp, and more flexibility in the design of ultrahigh speed transmitters.

  5. {100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  6. Stimulated Brillouin scattering of laser in semiconductor plasma embedded with nano-sized grains

    SciTech Connect

    Sharma, Giriraj; Dad, R. C.; Ghosh, S.

    2015-07-31

    A high power laser propagating through semiconductor plasma undergoes Stimulated Brillouin scattering (SBS) from the electrostrictively generated acoustic perturbations. We have considered that nano-sized grains (NSGs) ions are embedded in semiconductor plasma by means of ion implantation. The NSGs are bombarded by the surrounding plasma particles and collect electrons. By considering a negative charge on the NSGs, we present an analytically study on the effects of NSGs on threshold field for the onset of SBS and Brillouin gain of generated Brillouin scattered mode. It is found that as the charge on the NSGs builds up, the Brillouin gain is significantly raised and the threshold pump field for the onset of SBS process is lowered.

  7. Cu2O-based solar cells using oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-01-01

    We describe significant improvements of the photovoltaic properties that were achieved in Al-doped ZnO (AZO)/n-type oxide semiconductor/p-type Cu2O heterojunction solar cells fabricated using p-type Cu2O sheets prepared by thermally oxidizing Cu sheets. The multicomponent oxide thin film used as the n-type semiconductor layer was prepared with various chemical compositions on non-intentionally heated Cu2O sheets under various deposition conditions using a pulsed laser deposition method. In Cu2O-based heterojunction solar cells fabricated using various ternary compounds as the n-type oxide thin-film layer, the best photovoltaic performance was obtained with an n-ZnGa2O4 thin-film layer. In most of the Cu2O-based heterojunction solar cells using multicomponent oxides composed of combinations of various binary compounds, the obtained photovoltaic properties changed gradually as the chemical composition was varied. However, with the ZnO-MgO and Ga2O3-Al2O3 systems, higher conversion efficiencies (η) as well as a high open circuit voltage (Voc) were obtained by using a relatively small amount of MgO or Al2O3, e.g., (ZnO)0.91-(MgO)0.09 and (Ga2O3)0.975-(Al2O3)0.025, respectively. When Cu2O-based heterojunction solar cells were fabricated using Al2O3-Ga2O3-MgO-ZnO (AGMZO) multicomponent oxide thin films deposited with metal atomic ratios of 10, 60, 10 and 20 at.% for the Al, Ga, Mg and Zn, respectively, a high Voc of 0.98 V and an η of 4.82% were obtained. In addition, an enhanced η and an improved fill factor could be achieved in AZO/n-type multicomponent oxide/p-type Cu2O heterojunction solar cells fabricated using Na-doped Cu2O (Cu2O:Na) sheets that featured a resistivity controlled by optimizing the post-annealing temperature and duration. Consequently, an η of 6.25% and a Voc of 0.84 V were obtained in a MgF2/AZO/n-(Ga2O3-Al2O3)/p-Cu2O:Na heterojunction solar cell fabricated using a Cu2O:Na sheet with a resistivity of approximately 10 Ω·cm and a (Ga0.975Al0

  8. Development of lead salt semiconductor lasers for the 9-17 micron spectral region

    NASA Technical Reports Server (NTRS)

    Linden, K. J.; Butler, J. F.; Nill, K. W.; Reeder, R. E.

    1981-01-01

    Improved diode lasers of Pb sub 1-x Sn sub x Se operating in the 9-17 micrometers spectral region were developed. The performance characteristics of the best lasers exceeded the contract goals of 500 microW/mode at T 30K in the 9-12 micrometers region and 200 microW/mode at T 18K in the 16-17 micrometers region. Increased reliability and device yields resulted from processing improvements which evolved from a series of diagnostic studies. By means of Auger electron spectroscopy, laser shelf storage degradation was shown to be characterized by the presence of In metal on the semiconductor crystal surfaces. Studies of various metal barrier layers between the crystals and the In metal led to the development of an improved metallurgical contacting technology which has resulted in devices with performance stability values exceeding the contract goal of a one year shelf life. Lasers cycled over 500 times between 300K and 77K were also shown to be stable. Studies on improved methods of fabricating striped geometry lasers indicated that good spectral mode characteristics resulted from lasers which stripe widths of 12 and 25 micrometers.

  9. Ultrafast-laser-induced surface texturing and crystallization of semiconductors for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Nayak, Barada K.

    This dissertation discusses the development of a novel laser texturing method that enables fabrication of unique nano/micro surface structures in different material systems and their applications. The primary application described in this work is on the development of improved photovoltaic cells. The interaction of ultrafast lasers in the presence of different reactive and inert gases leads towards formation of nearly regular arrays of conical microstructures (and in some cases nanospikes atop microstructures). These textured surfaces trap the incident light very efficiently in a very broad spectrum (almost 100% over the entire solar spectrum and around 95% in the infrared spectral range of 2.5-25 mum for silicon) and the material looks pitch dark to bare eye. We thoroughly investigated the role of different gases and laser parameters on the formation of these structures and their applications. Laser texturing and crystallization can be achieved as a one step process for amorphous thin film silicon for photovoltaic application. We have also demonstrated the unique capability of low cost semiconductor laser for crystallizing thick silicon films for photovoltaic applications. Laser texturing and crystallization technique has been applied to fabricate efficient thin film solar cells. Encouraging results for cells fabricated in bulk textured silicon has also been observed. Additionally, we have demonstrated three unique applications of this texturing technology: (a) producing superhydrophobic surfaces in titanium and stainless steel; (b) fabrication of arrays of micro/nano holes in silicon; (c) growth and proliferation of stem cells in textured titanium surfaces.

  10. Wavelength-tunable actively mode-locked erbium-doped fiber ring laser using a distributed feedback semiconductor laser as mode locker and tunable filter

    NASA Astrophysics Data System (ADS)

    Li, Shenping; Chan, K. T.

    1999-07-01

    A wavelength-tunable actively mode-locked erbium fiber ring laser was demonstrated using a distributed feedback semiconductor laser as an intensity mode locker and a tunable optical filter. Very stable optical pulse trains at gigabit repetition rates were generated using harmonica mode locking. The supermode noise was suppressed to 60 dB below the signal level and the root-mean-square timing jitter (0.45 kHz-1 MHz) was found to be about 1% of the pulse duration. A continuous wavelength tuning range of 1.8 nm was achieved by changing the semiconductor laser temperature from 11.4 to 30 °C.

  11. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response. PMID:27295453

  12. Uniform Doping in Quantum-Dots-Based Dilute Magnetic Semiconductor.

    PubMed

    Saha, Avijit; Shetty, Amitha; Pavan, A R; Chattopadhyay, Soma; Shibata, Tomohiro; Viswanatha, Ranjani

    2016-07-01

    Effective manipulation of magnetic spin within a semiconductor leading to a search for ferromagnets with semiconducting properties has evolved into an important field of dilute magnetic semiconductors (DMS). Although a lot of research is focused on understanding the still controversial origin of magnetism, efforts are also underway to develop new materials with higher magnetic temperatures for spintronics applications. However, so far, efforts toward quantum-dots(QDs)-based DMS materials are plagued with problems of phase separation, leading to nonuniform distribution of dopant ions. In this work, we have developed a strategy to synthesize highly crystalline, single-domain DMS system starting from a small magnetic core and allowing it to diffuse uniformly inside a thick CdS semiconductor matrix and achieve DMS QDs. X-ray absorption fine structure (XAFS) spectroscopy and energy-dispersive X-ray spectroscopy-scanning transmission electron microscopy (STEM-EDX) indicates the homogeneous distribution of magnetic impurities inside the semiconductor QDs leading to superior magnetic property. Further, the versatility of this technique was demonstrated by obtaining ultra large particles (∼60 nm) with uniform doping concentration as well as demonstrating the high quality magnetic response.

  13. Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

    NASA Astrophysics Data System (ADS)

    Li, Jianfeng; Luo, Hongyu; He, Yulian; Liu, Yong; Luo, Binbin; Sun, Zhongyuan; Zhang, Lin; Turitsyn, Sergei K.

    2014-05-01

    A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 μJ with a pulse width of 1.68 μs and signal to noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 μm. To the best of our knowledge, this is the first 3 μm region SESAM based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers.

  14. Semiconductor saturable absorber mirror passively Q-switched 2.97 μm fluoride fiber laser

    NASA Astrophysics Data System (ADS)

    Li, J. F.; Luo, H. Y.; He, Y. L.; Liu, Y.; Zhang, L.; Zhou, K. M.; Rozhin, A. G.; Turistyn, S. K.

    2014-06-01

    A diode-cladding-pumped mid-infrared passively Q-switched Ho3+-doped fluoride fiber laser using a reverse designed broad band semiconductor saturable mirror (SESAM) was demonstrated. Nonlinear reflectivity of the SESAM was measured using an in-house Yb3+-doped mode-locked fiber laser at 1062 nm. Stable pulse train was produced at a slope efficient of 12.1% with respect to the launched pump power. Maximum pulse energy of 6.65 µJ with a pulse width of 1.68 µs and signal-to-noise ratio (SNR) of ~50 dB was achieved at a repetition rate of 47.6 kHz and center wavelength of 2.971 µm. To the best of our knowledge, this is the first 3 µm region SESAM-based Q-switched fiber laser with the highest average power and pulse energy, as well as the longest wavelength from mid-infrared passively Q-switched fluoride fiber lasers.

  15. Theoretical modeling of the dynamics of a semiconductor laser subject to double-reflector optical feedback

    NASA Astrophysics Data System (ADS)

    Bakry, A.; Abdulrhmann, S.; Ahmed, M.

    2016-06-01

    We theoretically model the dynamics of semiconductor lasers subject to the double-reflector feedback. The proposed model is a new modification of the time-delay rate equations of semiconductor lasers under the optical feedback to account for this type of the double-reflector feedback. We examine the influence of adding the second reflector to dynamical states induced by the single-reflector feedback: periodic oscillations, period doubling, and chaos. Regimes of both short and long external cavities are considered. The present analyses are done using the bifurcation diagram, temporal trajectory, phase portrait, and fast Fourier transform of the laser intensity. We show that adding the second reflector attracts the periodic and perioddoubling oscillations, and chaos induced by the first reflector to a route-to-continuous-wave operation. During this operation, the periodic-oscillation frequency increases with strengthening the optical feedback. We show that the chaos induced by the double-reflector feedback is more irregular than that induced by the single-reflector feedback. The power spectrum of this chaos state does not reflect information on the geometry of the optical system, which then has potential for use in chaotic (secure) optical data encryption.

  16. Radio-over-fiber DSB-to-SSB conversion using semiconductor lasers at stable locking dynamics.

    PubMed

    Hsieh, Kun-Lin; Hung, Yu-Han; Hwang, Sheng-Kwang; Lin, Chien-Chung

    2016-05-01

    In radio-over-fiber systems, optical single-sideband (SSB) modulation signals are preferred to optical double-sideband (DSB) modulation signals for fiber distribution in order to mitigate the microwave power fading effect. However, typically adopted modulation schemes generate DSB signals, making DSB-to-SSB conversion necessary before or after fiber distribution. This study investigates a semiconductor laser at stable locking dynamics for such conversion. The conversion relies solely on the nonlinear dynamical interaction between an input DSB signal and the laser. Only a typical semiconductor laser is therefore required as the key conversion unit, and no pump or probe signal is necessary. The conversion can be achieved for a broad tunable range of microwave frequency up to at least 60 GHz. In addition, the conversion can be carried out even when the microwave frequency, the power of the input DSB signal, or the frequency of the input DSB signal fluctuates over a wide range, leading to high adaptability and stability of the conversion system. After conversion, while the microwave phase quality, such as linewidth and phase noise, is mainly preserved, a bit-error ratio down to 10-9 is achieved for a data rate up to at least 8 Gb/s with a detection sensitivity improvement of more than 1.5 dB. PMID:27137598

  17. Radio-over-fiber DSB-to-SSB conversion using semiconductor lasers at stable locking dynamics.

    PubMed

    Hsieh, Kun-Lin; Hung, Yu-Han; Hwang, Sheng-Kwang; Lin, Chien-Chung

    2016-05-01

    In radio-over-fiber systems, optical single-sideband (SSB) modulation signals are preferred to optical double-sideband (DSB) modulation signals for fiber distribution in order to mitigate the microwave power fading effect. However, typically adopted modulation schemes generate DSB signals, making DSB-to-SSB conversion necessary before or after fiber distribution. This study investigates a semiconductor laser at stable locking dynamics for such conversion. The conversion relies solely on the nonlinear dynamical interaction between an input DSB signal and the laser. Only a typical semiconductor laser is therefore required as the key conversion unit, and no pump or probe signal is necessary. The conversion can be achieved for a broad tunable range of microwave frequency up to at least 60 GHz. In addition, the conversion can be carried out even when the microwave frequency, the power of the input DSB signal, or the frequency of the input DSB signal fluctuates over a wide range, leading to high adaptability and stability of the conversion system. After conversion, while the microwave phase quality, such as linewidth and phase noise, is mainly preserved, a bit-error ratio down to 10-9 is achieved for a data rate up to at least 8 Gb/s with a detection sensitivity improvement of more than 1.5 dB.

  18. Method of plasma etching Ga-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  19. Ultrafast laser trimming for reduced device leakage in high performance OTFT semiconductors for flexible displays

    NASA Astrophysics Data System (ADS)

    Karnakis, Dimitris; Cooke, Michael D.; Chan, Y. F.; Ogier, Simon D.

    2013-03-01

    Organic semiconductors (OSC) are solution processable synthetic materials with high carrier mobility that promise to revolutionise flexible electronics manufacturing due to their low cost, lightweight and high volume low temperature printing in reel-to-reel (R2R) [1] for applications such as flexible display backplanes (Fig.1), RFID tags, and logic/memory devices. Despite several recent technological advances, organic thin film transistor (OTFT) printing is still not production-ready due to limitations mainly with printing resolution on dimensionally unstable substrates and device leakage that reduces dramatically electrical performance. OTFTs have the source-drain in ohmic contact with the OSC material to lower contact resistance. If they are unpatterned, a leakage pathway from source to drain develops which results in non-optimum on/off currents and not controllable device uniformity (Fig.2). DPSS lasers offer several key advantages for OTFT patterning including maskless, non-contact, dry patterning, scalable large area operation with precision registration, well-suited to R2R manufacturing at overall μm size resolutions. But the thermal management of laser processing is very important as the devices are very sensitive to heat and thermomechanical damage [2]. This paper discusses 343nm picosecond laser ablation trimming of 50nm thick PTAA, TIPS pentacene and other semiconductor compounds on thin 50nm thick metal gold electrodes in a top gate configuration. It is shown that with careful optimisation, a suitable process window exists resulting in clean laser structuring without damage to the underlying layers while also containing laser debris. Several order of magnitude improvements were recorded in on/off currents up to 106 with OSC mobilities of 1 cm2/Vsec, albeit at slightly higher than optimum threshold voltages which support demanding flexible display backplane applications.

  20. Analytical predictions of the temperature profile within semiconductor nanostructures for solid-state laser refrigeration

    NASA Astrophysics Data System (ADS)

    Smith, Bennett E.; Zhou, Xuezhe; Davis, E. James; Pauzauskie, Peter J.

    2016-03-01

    The laser refrigeration of solid-state materials with nanoscale dimensions has been demonstrated for both semi- conducting (cadmium sulfide, CdS) and insulating dielectrics (Yb:YLiF4, YLF) in recent years. During laser refrigeration it is possible to observe morphology dependent resonances (MDRs), analogous to what is well- known in classical (Mie) light scattering theory, when the characteristic dimensions of the nanostructure are comparable to the wavelength of light used to initiate the laser cooling process. Mie resonances can create substantial increases for internal optical fields within a given nanostructure with the potential to enhance the absorption efficiency at the beginning of the cooling cycle. Recent breakthroughs in the laser refrigeration of semiconductor nanostructures have relied on materials that exhibit rectangular symmetry (nanoribbons). Here, we will present recent analytical, closed-form solutions to the energy partial differential equation that can be used to calculate the internal spatial temperature profile with a given semiconductor nanoribbon during irradiation by a continuous-wave laser. First, the energy equation is made dimensionless through the substitution of variables before being solved using the classical separation-of-variables approach. In particular, calculations will be presented for chalcogenide (CdS) nanoribbons using a pump wavelength of 1064 nm. For nanostructures with lower symmetry (such as YLF truncated tetragonal bipyramids) it is also possible to observe MDRs through numerical simulations using either the discrete dipole approximation or finite-difference time-domain simulations, and the resulting temperature profile can be calculated using the finite element method. Theoretical predictions are presented using parameters that will allow comparison with experimental data in the near future.

  1. Experiment on synchronization of semiconductor lasers by common injection of constant-amplitude random-phase light.

    PubMed

    Aida, Hiroki; Arahata, Masaya; Okumura, Haruka; Koizumi, Hayato; Uchida, Atsushi; Yoshimura, Kazuyuki; Muramatsu, Jun; Davis, Peter

    2012-05-21

    We experimentally and numerically observe the synchronization between two semiconductor lasers induced by common optical injection with constant-amplitude and random-phase modulation in configurations with and without optical feedback. Large cross correlation (~0.9) between the intensity oscillations of the two response lasers can be achieved although the correlation between the drive laser and either one of the two response lasers is very small (~0.2). High quality synchronization is achieved in the presence of optical feedback in response lasers with matched feedback phase offset. We investigate the dependence of synchronization on parameter values over wide parameter ranges.

  2. Mode-locked red-emitting semiconductor disk laser with sub-250 fs pulses

    SciTech Connect

    Bek, R. Kahle, H.; Schwarzbäck, T.; Jetter, M.; Michler, P.

    2013-12-09

    We report on passive mode locking of a semiconductor disk laser emitting pulses shorter than 250 fs at 664 nm with a repetition frequency of 836 MHz. A fast saturable absorber mirror fabricated by metal-organic vapor-phase epitaxy in a near-resonant design was used to enable the mode locking operation. It includes two GaInP quantum wells located close to the surface and an additional fused silica coating. The emission spectrum shows the superposition of a soliton-like part and a smaller “continuum” part.

  3. Semiconductor laser having a non-absorbing passive region with beam guiding

    NASA Technical Reports Server (NTRS)

    Botez, Dan (Inventor)

    1986-01-01

    A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.

  4. Odd-number theorem: optical feedback control at a subcritical Hopf bifurcation in a semiconductor laser.

    PubMed

    Schikora, S; Wünsche, H-J; Henneberger, F

    2011-02-01

    A subcritical Hopf bifurcation is prepared in a multisection semiconductor laser. In the free-running state, hysteresis is absent due to noise-induced escape processes. The missing branches are recovered by stabilizing them against noise through application of phase-sensitive noninvasive delayed optical feedback control. The same type of control is successfully used to stabilize the unstable pulsations born in the Hopf bifurcation. This experimental finding represents an optical counterexample to the so-called odd-number limitation of delayed feedback control. However, as a leftover of the limitation, the domains of control are extremely small.

  5. Limits imposed by nonlinear coupling on rotation sensitivity of a semiconductor ring laser gyroscope.

    PubMed

    Khandelwal, Arpit; Syed, Azeemuddin; Nayak, Jagannath

    2016-07-01

    The sensitivity of a monolithically integrated semiconductor ring laser gyro is severely limited by the high value of the lock-in threshold. In this work, we calculate the lock-in threshold using perturbation theory and coupled mode theory analysis. It is shown that gyro sensitivity is limited to an input rotation rate of 108  deg / h due to nonlinear coupling between the countertraveling modes. This coupling arises due to the backreflection of modes from moving index gratings, induced by rotation. Lock-in threshold is directly proportional to the strength of nonlinear coupling and spatial overlap of the modes' energy densities with periodic index perturbations.

  6. Theory of optical multistability and chaos in a resonant-type semiconductor laser amplifier

    SciTech Connect

    Otsuka, K.; Iwamura, H.

    1983-11-01

    Multistable light amplifications and self-pulsations in a resonant-type semiconductor laser diode (LD) amplifier are predicted. A basic idea is derived from the active layer refractive index dependence on carrier density. An LD amplifier is shown to act as a high-Q nonlinear Fabry-Perot interferometer with true optical gain and nonlinear refraction. Periodic and chaotic self-pulsations are shown to occur in the regime where the delay time of the feedback is smaller than the carrier lifetime.

  7. Semiconductor-nanocrystals-based white light-emitting diodes.

    PubMed

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z

    2010-08-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white light-emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  8. Semiconductor Nanocrystals-Based White Light Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Hu, Michael Z.; Duty, Chad E

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid state lighting, such as white light emitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement could cut the ever-increasing energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, we highlight the recent progress in semiconductor nanocrystals-based WLEDs, compare different approaches for generating white light, and discuss the benefits and challenges of the solid state lighting technology.

  9. Semiconductor-Nanocrystals-Based White Light-Emitting Diodes

    SciTech Connect

    Dai, Quanqin; Duty, Chad E; Hu, Michael Z.

    2010-01-01

    In response to the demands for energy and the concerns of global warming and climate change, energy efficient and environmentally friendly solid-state lighting, such as white lightemitting diodes (WLEDs), is considered to be the most promising and suitable light source. Because of their small size, high efficiency, and long lifetime, WLEDs based on colloidal semiconductor nanocrystals (or quantum dots) are emerging as a completely new technology platform for the development of flat-panel displays and solid-state lighting, exhibiting the potential to replace the conventionally used incandescent and fluorescent lamps. This replacement can cut the ever-increasing level of energy consumption, solve the problem of rapidly depleting fossil fuel reserves, and improve the quality of the global environment. In this review, the recent progress in semiconductor-nanocrystals-based WLEDs is highlighted, the different approaches for generating white light are compared, and the benefits and challenges of the solid-state lighting technology are discussed.

  10. Method of plasma etching GA-based compound semiconductors

    DOEpatents

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  11. Semiconductor wire array structures, and solar cells and photodetectors based on such structures

    SciTech Connect

    Kelzenberg, Michael D.; Atwater, Harry A.; Briggs, Ryan M.; Boettcher, Shannon W.; Lewis, Nathan S.; Petykiewicz, Jan A.

    2014-08-19

    A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

  12. High temperature heat source generation with quasi-continuous wave semiconductor lasers at power levels of 6 W for medical use.

    PubMed

    Fujimoto, Takahiro; Imai, Yusuke; Tei, Kazuyoku; Ito, Shinobu; Kanazawa, Hideko; Yamaguchi, Shigeru

    2014-01-01

    We investigate a technology to create a high temperature heat source on the tip surface of the glass fiber proposed for medical surgery applications. Using 4 to 6 W power level semiconductor lasers at a wavelength of 980 nm, a laser coupled fiber tip was preprocessed to contain a certain amount of titanium oxide powder with a depth of 100 μm from the tip surface so that the irradiated low laser energy could be perfectly absorbed to be transferred to thermal energy. Thus, the laser treatment can be performed without suffering from any optical characteristic of the material. A semiconductor laser was operated quasi-continuous wave mode pulse time duration of 180 ms and >95% of the laser energy was converted to thermal energy in the fiber tip. Based on two-color thermometry, by using a gated optical multichannel analyzer with a 0.25 m spectrometer in visible wavelength region, the temperature of the fiber tip was analyzed. The temperature of the heat source was measured to be in excess 3100 K.

  13. Narrow linewidth broadband tunable semiconductor laser at 840 nm with dual acousto-optic tunable configuration for OCT applications

    NASA Astrophysics Data System (ADS)

    Chamorovskiy, Alexander; Shramenko, Mikhail V.; Lobintsov, Andrei A.; Yakubovich, Sergei D.

    2016-03-01

    We demonstrate a tunable narrow linewidth semiconductor laser for the 840 nm spectral range. The laser has a linear cavity comprised of polarization maintaining (PM) fiber. A broadband semiconductor optical amplifier (SOA) in in-line fiber-coupled configuration acts as a gain element. It is based on InGaAs quantum-well (QW) active layer. SOA allows for tuning bandwidth exceeding 25 nm around 840 nm. Small-signal fiber-to-fiber gain of SOA is around 30 dB. A pair of acousto-optic tunable filters (AOTF) with a quasi-collinear interaction of optical and acoustic waves are utilized as spectrally selective elements. AOTF technology benefits in continuous tuning, broadband operation, excellent reproducibility and stability of the signal, as well as a high accuracy of wavelength selectivity due to the absence of mechanically moving components. A single AOTF configuration has typical linewidth in 0.05-0.15 nm range due to a frequency shift obtained during each roundtrip. A sequential AOTF arrangement enables instantaneous linewidth generation of <0.01 nm by compensating for this shift. Linewidth as narrow as 0.0036 nm is observed at 846 nm wavelength using a scanning Fabry-Perot interferometer with 50 MHz spectral resolution. Output power is in the range of 1 mW. While the majority of commercial tunable sources operate in 1060-1550 nm spectral ranges, the 840 nm spectral range is beneficial for optical coherence tomography (OCT). The developed narrow linewidth laser can be relevant for OCT with extended imaging depth, as well as spectroscopy, non-destructive testing and other applications.

  14. Efficient holmium:yttrium lithium fluoride laser longitudinally pumped by a semiconductor laser array

    NASA Technical Reports Server (NTRS)

    Hemmati, H.

    1987-01-01

    Optical pumping of a holmium:yttrium lithium floride (Ho:YLF) crystal with a 790-nm continuous-wave diode-laser array has generated 56 mW of 2.1-micron laser radiation with an optical-to-optical conversion slope efficiency of 33 percent while the crystal temperature is held at 77 K. The lasing threshold occurs at 7 mW of input power, and laser operation continues up to a crystal temperature of 124 K.

  15. Experimental demonstration of a low-cost tunable semiconductor DFB laser for access networks

    NASA Astrophysics Data System (ADS)

    Li, Lianyan; Tang, Song; Huang, Long; Zhang, Tingting; Li, Simin; Shi, Yuechun; Chen, Xiangfei

    2014-09-01

    A low-cost tunable semiconductor distributed feedback (DFB) laser design in access networks is proposed and experimentally demonstrated. It covers 9 nm continuous tuning range by changing the temperature. The side mode suppression ratios are above 42 dB over the tuning range. The current and temperature coefficients of wavelength tuning are 0.0124 nm mA-1 and 0.0875 nm °C, respectively. The results indicate that the reconstruction-equivalent-chirp (REC) technique is promising to fabricate low-cost tunable DFB lasers meeting the requirement of wavelength-division-multiplexing passive optical networks (WDM-PONs). It should be also noted that the tuning range can be easily extended by using more sections.

  16. Modeling of Millimeter-Wave Modulation Characteristics of Semiconductor Lasers under Strong Optical Feedback

    PubMed Central

    Bakry, Ahmed

    2014-01-01

    This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated. PMID:25383381

  17. Supercontinuum growth in a highly nonlinear fiber with a low-coherence semiconductor laser diode

    NASA Astrophysics Data System (ADS)

    Abeeluck, A. K.; Headley, C.

    2004-11-01

    A low-coherence, amplified, cw semiconductor laser diode is used as a pump to demonstrate supercontinuum (SC) generation in a highly nonlinear, dispersion-shifted fiber (HNLF). At a launch power of 1.6W into the anomalous-dispersion regime of 5km of HNLF, a SC extending from 1230nm to greater than 1770nm is achieved. The SC grows through the seeding effect of modulation instability that also converts the cw beam into short pulses so that subsequent spectral broadening becomes similar to pumping with pulsed laser sources. The experimental data show the manifestation of soliton self-frequency shift associated with a Stokes band as the launch power is increased. Amplification of the continuum noise with respect to the cw pump is also reported.

  18. Compact, temperature-stable multi-gigahertz passively modelocked semiconductor disk laser

    NASA Astrophysics Data System (ADS)

    Song, Yan-Rong; Guoyu, He-Yang; Zhang, Peng; Tian, Jin-Rong

    2015-08-01

    We present a compact passively mode-locked semiconductor disk laser at 1045 nm. The gain chip without any post processing consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region. 3-GHz repetition rate, 4.9-ps pulse duration, and 30-mW average output power are obtained with 1.4 W of 808-nm incident pump power. The temperature stability of the laser is demonstrated to have an ideal shift rate of 0.035 nm/K of the lasing wavelength. Project supported by the National Natural Science Foundation of China (Grant No. 61177047) and the Key Project of the National Natural Science Foundation of China (Grant No. 61235010).

  19. Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

    NASA Astrophysics Data System (ADS)

    Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

    2016-05-01

    It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

  20. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode.

    PubMed

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus; Shen, Yuxin; Vanderheiden, Sylvia; Valouch, Sebastian; Vannahme, Christoph; Bräse, Stefan; Mappes, Timo; Lemmer, Uli

    2012-03-12

    The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solutions on cm-scale surface gratings of different periods. We report optically pumped continuously tunable laser emission of 13 nm in the blue, 16 nm in the green and 19 nm in the red spectral region on a single chip respectively. Tuning behavior can be described with the Bragg-equation and the measured thickness profile. The laser threshold is low enough that inexpensive laser diodes can be used as pump sources.

  1. Physical layer one-time-pad data encryption through synchronized semiconductor laser networks

    NASA Astrophysics Data System (ADS)

    Argyris, Apostolos; Pikasis, Evangelos; Syvridis, Dimitris

    2016-02-01

    Semiconductor lasers (SL) have been proven to be a key device in the generation of ultrafast true random bit streams. Their potential to emit chaotic signals under conditions with desirable statistics, establish them as a low cost solution to cover various needs, from large volume key generation to real-time encrypted communications. Usually, only undemanding post-processing is needed to convert the acquired analog timeseries to digital sequences that pass all established tests of randomness. A novel architecture that can generate and exploit these true random sequences is through a fiber network in which the nodes are semiconductor lasers that are coupled and synchronized to central hub laser. In this work we show experimentally that laser nodes in such a star network topology can synchronize with each other through complex broadband signals that are the seed to true random bit sequences (TRBS) generated at several Gb/s. The potential for each node to access real-time generated and synchronized with the rest of the nodes random bit streams, through the fiber optic network, allows to implement an one-time-pad encryption protocol that mixes the synchronized true random bit sequence with real data at Gb/s rates. Forward-error correction methods are used to reduce the errors in the TRBS and the final error rate at the data decoding level. An appropriate selection in the sampling methodology and properties, as well as in the physical properties of the chaotic seed signal through which network locks in synchronization, allows an error free performance.

  2. Improving the chaos bandwidth of a semiconductor laser with phase-conjugate feedback

    NASA Astrophysics Data System (ADS)

    Mercier, Émeric; Wolfersberger, Delphine; Sciamanna, Marc

    2016-04-01

    Common applications using optical chaos in a semiconductor laser include, among others, random number generation and chaos-encrypted communications. They rely on chaos of high dimension with a large bandwidth and a high entropy growth rate to achieve good results. Optical chaos from a semiconductor laser with conventional optical feedback (COF) is typically used as the primary source of chaos. Additional enhancing techniques are used to enlarge the chaos bandwidth. In this contribution, we show experimentally how using phase-conjugate feedback (PCF) can naturally produce a chaos of higher bandwidth than COF. PCF is an alternative to COF which consists of feeding the conjugate of the optical output back into the laser cavity, with a time-delay. Thanks to an oscilloscope with a fast sampling rate, and a large bandwidth, we were able to measure and observe the time-resolved frequency dynamics with a good precision. In the regime of low-frequency fluctuations (LFF), where dropouts of optical power occur randomly, we were able to compare the difference in dynamics before and after a dropout, for PCF and COF. In the range of attainable reflectivities, we measured a bandwidth increase of up to 27 % with PCF when compared to COF. Interestingly, we found that high-frequency dynamics are enabled before dropouts in PCF, where it was theoretically shown that the system jumps between destabilized self-pulsing states at harmonics of the external-cavity frequency, the so-called external-cavity modes (ECMs). This observation tends to confirm that ECMs in PCF are indeed fundamentally different than ECMs in COF, where they are simple steady-states. Finally, we believe that the enhancing techniques used with COF could also be used with PCF to obtain even wider chaotic bandwidths. These results could lead to studies about the dimension and the entropy growth rate of chaos from a laser diode with PCF.

  3. Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation

    SciTech Connect

    Bulgakov, A V; Evtushenko, A B; Shukhov, Yu G; Ozerov, I; Marin, W

    2010-12-29

    Formation of small clusters during pulsed ablation of two binary semiconductors, zinc oxide and indium phosphide, in vacuum by UV, visible, and IR laser radiation is comparatively studied. The irradiation conditions favourable for generation of neutral and charged Zn{sub n}O{sub m} and In{sub n}P{sub m} clusters of different stoichiometry in the ablation products are found. The size and composition of the clusters, their expansion dynamics and reactivity are analysed by time-of-flight mass spectrometry. A particular attention is paid to the mechanisms of ZnO and InP ablation as a function of laser fluence, with the use of different ablation models. It is established that ZnO evapourates congruently in a wide range of irradiation conditions, while InP ablation leads to enrichment of the target surface with indium. It is shown that this radically different character of semiconductor ablation determines the composition of the nanostructures formed: zinc oxide clusters are mainly stoichiometric, whereas In{sub n}P{sub m} particles are significantly enriched with indium. (photonics and nanotechnology)

  4. Influence of kinetic hole filling on the stability of mode-locked semiconductor disk lasers

    NASA Astrophysics Data System (ADS)

    Moloney, Jerome V.; Kilen, Isak; Hader, Jorg; Koch, Stephan W.

    2016-03-01

    Microscopic many-body theory is employed to analyze the mode-locking dynamics of a vertical external-cavity surface-emitting laser with a saturable absorber mirror. The quantum-wells are treated microscopically through the semiconductor Bloch equations and the light field using Maxwell's equations. Higher order correlation effects such as polarization dephasing and carrier relaxation at the second Born level are included and also approximated using effective rates fitted to second-Born-Markov evaluations. The theory is evaluated numerically for vertical external cavity surface emitting lasers with resonant periodic gain media. For given gain, the influence of the loss conditions on the very-short pulse generation in the range above 100 fs is analyzed. Optimized operational parameters are identified. Additionally, the fully microscopic theory at the second Born level is used to carrier out a pump-probe study of the carrier recovery in individual critical components of the VECSEL cavity such as the VECSEL chip itself and semiconductor or graphene saturable absorber mirrors.

  5. Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

    NASA Technical Reports Server (NTRS)

    Davidson, Frederic; Sun, Xiaoli

    1989-01-01

    Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

  6. Threshold characteristics of semiconductor lasers under conditions of violation of electroneutrality in quantum wells

    SciTech Connect

    Sokolova, Z N; Tarasov, I S; Asryan, L V

    2013-05-31

    The threshold characteristics of semiconductor lasers are studied theoretically when the electroneutrality in quantum wells is violated. It is shown that even with the infinitely large threshold concentration of the charge carriers of one sign in the wells, the minimum threshold concentration of the carriers of the opposite sign is nonzero. It is found that in InGaAs/GaAs/AlGaAs heterostructures emitting near the wavelength 1.044 {mu}m, in a wide range of values of the electron concentration in the wells the threshold concentrations of free electrons and holes in the waveguide region are small, the contribution of the recombination current in the waveguide region to the total threshold current is negligible and in the case of a single quantum well, the threshold current density is virtually constant, i.e., the violation of electroneutrality in the InGaAs/GaAs/AlGaAs structures with a single quantum well has almost no effect on the threshold current. In the structures with two or three wells the violation of electroneutrality manifests itself much stronger and can lead to either a decrease or an increase in the threshold current. (semiconductor lasers. physics and technology)

  7. Nanoscale Photoconductivity Imaging of Thin-film Semiconductors by Laser-assisted Microwave Impedance Microscopy

    NASA Astrophysics Data System (ADS)

    Chu, Zhaodong; Wu, Di; Ren, Yuan; Yang, Seungcheol; Sun, Liuyang; Li, Xiaoqin; Lai, Keji

    The photo-response of semiconductors is usually studied by detecting the photocurrent across source-drain electrodes under light illumination. By integrating the microwave impedance microscopy (MIM) technique with focused-laser stimulation, we are able to perform the real-space photoconductivity mapping of photo-sensitive materials without the need of patterning contact electrodes. Here, we report the MIM results of various thin-film materials, such as In2Se3 nano-sheets and transition metal dichalcogenides (TMD) flakes, illuminated by laser beams of different wavelengths in the ambient condition. With no or below-gap illumination, the samples were highly resistive, as indicated by the low MIM signals. The MIM contrast emerges under above-gap light and increases as increasing laser intensity, which clearly demonstrates the local imaging of photoconductivity rather than the transport photocurrent. Interestingly, clear domain structures with mesoscopic length scales were seen in the data due to the coexistence of multiple phases in In2Se3. The unique combination of MIM and laser stimulation thus provides a new direction to explore the microscopic origin of various light-driven phenomena in complex systems. We gratefully acknowledge financial support from NSF.

  8. Efficient power extraction in surface-emitting semiconductor lasers using graded photonic heterostructures.

    PubMed

    Xu, Gangyi; Colombelli, Raffaele; Khanna, Suraj P; Belarouci, Ali; Letartre, Xavier; Li, Lianhe; Linfield, Edmund H; Davies, A Giles; Beere, Harvey E; Ritchie, David A

    2012-01-01

    Symmetric and antisymmetric band-edge modes exist in distributed feedback surface-emitting semiconductor lasers, with the dominant difference being the radiation loss. Devices generally operate on the low-loss antisymmetric modes, although the power extraction efficiency is low. Here we develop graded photonic heterostructures, which localize the symmetric mode in the device centre and confine the antisymmetric modes close to the laser facet. This modal spatial separation is combined with absorbing boundaries to increase the antisymmetric mode loss, and force device operation on the symmetric mode, with elevated radiation efficiency. Application of this concept to terahertz quantum cascade lasers leads to record-high peak-power surface emission (>100 mW) and differential efficiencies (230 mW A(-1)), together with low-divergence, single-lobed emission patterns, and is also applicable to continuous-wave operation. Such flexible tuning of the radiation loss using graded photonic heterostructures, with only a minimal influence on threshold current, is highly desirable for optimizing second-order distributed feedback lasers. PMID:22805559

  9. Pattern recognition of electronic bit-sequences using a semiconductor mode-locked laser and spatial light modulators

    NASA Astrophysics Data System (ADS)

    Bhooplapur, Sharad; Akbulut, Mehmetkan; Quinlan, Franklyn; Delfyett, Peter J.

    2010-04-01

    A novel scheme for recognition of electronic bit-sequences is demonstrated. Two electronic bit-sequences that are to be compared are each mapped to a unique code from a set of Walsh-Hadamard codes. The codes are then encoded in parallel on the spectral phase of the frequency comb lines from a frequency-stabilized mode-locked semiconductor laser. Phase encoding is achieved by using two independent spatial light modulators based on liquid crystal arrays. Encoded pulses are compared using interferometric pulse detection and differential balanced photodetection. Orthogonal codes eight bits long are compared, and matched codes are successfully distinguished from mismatched codes with very low error rates, of around 10-18. This technique has potential for high-speed, high accuracy recognition of bit-sequences, with applications in keyword searches and internet protocol packet routing.

  10. Longitudinal Mode Control, Wavelength Tuning and High-Speed Modulation in Semiconductor Integrated ETALON Interference Lasers

    NASA Astrophysics Data System (ADS)

    Antreasyan, Arsam

    In this dissertation a new GaAs-GaAlAs double -heterostructure, interferometric semiconductor laser, the Integrated Etalon Interference (IEI) laser, is presented. This laser consists of one curved waveguide joined at both ends to two straight waveguides. The interference is caused by the internal reflection and lateral mode conversion at the junction discontinuity between the straight and curved segments. Strong lateral index confinement is provided by the fabrication of a buried heterostructure type laser cavity involving a two-step liquid phase epitaxial growth procedure. The laser is operable for several purposes. Under uniform pumping very stable single longitudinal mode operation has been obtained with a wavelength locking range up to 23(DEGREES)C within which the wavelength changes at a rate of 0.5-0.6 angstrom/(DEGREES)C. Under separate pumping discrete wavelength tuning up to 90 angstroms and continuous wavelength tuning up to 4 angstroms has been achieved making the laser very attractive for applications in state of the art optical communication systems. Furthermore, under separate pumping a wavelength locking range up to 17(DEGREES)C has been obtained. In addition, high-speed direct injection current modulation experiments reveal a fast response capability of the IEI laser in the gigahertz range. Under small-signal modulation 3dB bandwidth of 1.8 GHz at I/I(,th) = 1.115 has been measured. Also the laser has maintained single longitudinal mode operation up to an optical modulation depth of 45% under 1.5 GHz modulation. An intermodal coupling analysis has been carried out which involves the expansion of the unknown field at the junction discontinuity both in terms of the eigenmodes of the straight and curved waveguide. By satisfying the continuity conditions for the lateral field components of the magnetic and electric fields an integral equation is obtained which is solved subsequently by the method of moments. The results of this analysis are utilized to

  11. Quantum cascade semiconductor infrared and far-infrared lasers: from trace gas sensing to non-linear optics.

    PubMed

    Duxbury, Geoffrey; Langford, Nigel; McCulloch, Michael T; Wright, Stephen

    2005-11-01

    The Quantum cascade (QC) laser is an entirely new type of semiconductor device in which the laser wavelength depends on the band-gap engineering. It can be made to operate over a much larger range than lead salt lasers, covering significant parts of both the infrared and submillimetre regions, and with higher output power. In this tutorial review we survey some of the applications of these new lasers, which range from trace gas detection for atmospheric or medical purposes to sub-Doppler and time dependent non-linear spectroscopy.

  12. Corrugation-pitch-modulated DFB semiconductor lasers realized by common holographic exposure

    NASA Astrophysics Data System (ADS)

    Li, Simin; Li, Lianyan; Shi, Yuechun; Cao, Baoli; Guo, Renjia; Zheng, Junshou; Chen, Xiangfei

    2014-07-01

    Experimental results of corrugation-pitch-modulated (CPM) DFB lasers with distributed phase shift (DPS) based on reconstruction-equivalent-chirp (REC) technique are demonstrated. The DPS can flatten the light intensity distribution along the laser cavity and reduce the spatial hole burning (SHB). The lasers have good single longitudinal mode (SLM) property even under high injection current. Thanks to the sampling technique, the grating can be easily fabricated by holographic exposure and conventional lithograph.

  13. Rate equation analysis of dynamic response in strongly injection-locked cascaded semiconductor microring lasers

    NASA Astrophysics Data System (ADS)

    Smolyakov, Gennady A.; Fichou, Yann; Osinski, Marek

    2012-02-01

    A novel cascaded optical injection-locking scheme for modulation bandwidth enhancement and tailoring is proposed, involving a distributed-Bragg-reflector master laser monolithically integrated with two cascaded strongly injectionlocked whistle-geometry unidirectional microring lasers. Improved high-speed performance of the proposed cascaded injection-locking scheme is confirmed in numerical modeling by comparing it with the scheme based on a single strongly injection-locked whistle-geometry unidirectional microring laser.

  14. Low-temperature laser-induced selective area growth of compound semiconductor

    NASA Astrophysics Data System (ADS)

    Uppili, Sudarsan

    Laser induced epitaxial growth of gallium phosphide was investigated as a low temperature, spatially selective process using both pyrolytic and photolytic reaction. A focussed beam from an argon ion laser operating at 514.5 nm was used to direct-write epitaxial microstructures of homoepitaxial GaP using a pyrolytic process. The precursors were trimethyl gallium (TMG) and tertiary butylphosphine (TBP). Dependence of the epitaxial growth on several deposition parameters was examined. An ArF excimer laser was also used to achieve homoepitaxy and heteroepitaxy of gallium phosphide on gallium arsenide at 500 C using TMG and TBP as the precusor gases. Dependence of homoepitaxial growth of GaP on several parameters is examined. The crystalline properties of the film were determined using transmission electron microscopy (TEM). Electrical properties of p-n diodes fabricated via Zn doping were also examined. Defect structures in excimer laser-assisted epitaxial GaP on (100) GaP and (100) GaAs were examined using TEM. Periodic structures were obtained using nominally unpolarized excimer laser radiation, during heteroepitaxial growth of GaP on GaAs. Both crystalline properties and chemical composition of these structures were examined. Microanalysis showed modulation in composition in the ripple structure resulting from the thermal variation caused by the optical interference during growth. Electrical conductivity measurements of GaP during pulsed lasers irradiation indicated that in the absence of gases, there was appreciable heating of the semiconductor. However, a very small quantity of hydrogen or helium cooled the substrate appreciably. This suggested that the average temperature rise of the substrate was not an important factor in the temperature calculations used in the present investigation.

  15. Pulsed Laser System to Simulate Effects of Cosmic Rays in Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Aveline, David C.; Adell, Philippe C.; Allen, Gregory R.; Guertin, Steven M.; McClure, Steven S.

    2011-01-01

    Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all

  16. Peak equalization of rational-harmonic-mode-locking fiberized semiconductor laser pulse via optical injection induced gain modulation.

    PubMed

    Kang, Jung-Jui; Lin, Yu-Chan; Lee, Chao-Kuei; Lin, Gong-Ru

    2009-01-19

    Optical injection induced gain modulation of a semiconductor optical amplifier (SOA) is demonstrated to equalize the peak intensity of pulses generating from the rational-harmonic-mode-locking (RHML) SOA based fiberized semiconductor laser. This is achieved by adjusting the temporal shape of the injected optical signal generated from a Mach-Zehnder intensity modulator, in which the DC biased level exceeding Vpi and the electrical pulse amplitude of 1.5Vpi are concurrently employed. Numerical simulation on the injected optical signal profile and the SOA gain during the inverse-optical-pulse injection induced gain modulation process are also demonstrated. After a peculiar inverse-optical-pulse injection, each pulse in the 5th-order RHML pulse-train experiences different gain from temporally varied SOA gain profile, leading the pulse peak to equalize one another with a minimum standard deviation of 2.5% on the peak intensity variation. The optimized 5th-order RHML pulse exhibits a signal-to-noise suppression ratio of 20 dB and a reduced variation on temporal spacing from 11 to 4 ps. The clock amplitude jitter is compress from 35.3% to 7.3%, which is less than the limitation up to 10% for 5th order RHML generation.

  17. Method to determine the position-dependant metal correction factor for dose-rate equivalent laser testing of semiconductor devices

    DOEpatents

    Horn, Kevin M.

    2013-07-09

    A method reconstructs the charge collection from regions beneath opaque metallization of a semiconductor device, as determined from focused laser charge collection response images, and thereby derives a dose-rate dependent correction factor for subsequent broad-area, dose-rate equivalent, laser measurements. The position- and dose-rate dependencies of the charge-collection magnitude of the device are determined empirically and can be combined with a digital reconstruction methodology to derive an accurate metal-correction factor that permits subsequent absolute dose-rate response measurements to be derived from laser measurements alone. Broad-area laser dose-rate testing can thereby be used to accurately determine the peak transient current, dose-rate response of semiconductor devices to penetrating electron, gamma- and x-ray irradiation.

  18. Ultrafast Pulsed-Laser Applications for Semiconductor Thin Film Deposition and Graphite Photoexfoliation

    NASA Astrophysics Data System (ADS)

    Oraiqat, Ibrahim Malek

    This thesis focuses on the application of ultrafast lasers in nanomaterial synthesis. Two techniques are investigated: Ultrafast Pulsed Laser Deposition (UFPLD) of semiconductor nanoparticle thin films and ultrafast laser scanning for the photoexfoliation of graphite to synthesize graphene. The importance of the work is its demonstration that the process of making nanoparticles with ultrafast lasers is extremely versatile and can be applied to practically any material and substrate. Moreover, the process is scalable to large areas: by scanning the laser with appropriate optics it is possible to coat square meters of materials (e.g., battery electrodes) quickly and inexpensively with nanoparticles. With UFPLD we have shown there is a nanoparticle size dependence on the laser fluence and the optical emission spectrum of the plume can be used to determine a fluence that favors smaller nanoparticles, in the range of 10-20 nm diameter and 3-5 nm in height. We have also demonstrated there are two structural types of particles: amorphous and crystalline, as verified with XRD and Raman spectroscopy. When deposited as a coating, the nanoparticles can behave as a quasi-continuous thin film with very promising carrier mobilities, 5-52 cm2/Vs, substantially higher than for other spray-coated thin film technologies and orders of magnitude larger than those of colloidal quantum dot (QD) films. Scanning an ultrafast laser over the surface of graphite was shown to produce both filamentary structures and sheets which are semi-transparent to the secondary-electron beam in SEM. These sheets resemble layers of graphene produced by exfoliation. An ultrafast laser "printing" configuration was also identified by coating a thin, transparent substrate with graphite particles and irradiating the back of the film for a forward transfer of material onto a receiving substrate. A promising application of laser-irradiated graphene coatings was investigated, namely to improve the charge

  19. Rate-equation analysis for the frequency-chirp-to-modulated-power ratio of a semiconductor-diode laser

    SciTech Connect

    Welford, D.R.

    1985-11-01

    An expression for the frequency chirp to modulated power ratio (CPR) is derived from a rate-equation analysis of the small-signal, injection-current modulation in a semiconductor diode laser. The model includes the effect of lateral carrier diffusion across the active region of the laser diode. The modulation-frequency dependence of the CPR is flat from dc to a few hundred megahertz, beyond which it is proportional to the modulation frequency.

  20. A rate equation analysis for the frequency chirp to modulated power ratio of a semiconductor diode laser

    SciTech Connect

    Welford, D.

    1985-11-01

    An expression for the frequency chirp to modulated power ratio (CPR) is derived from a rate equation analysis of the small-signal, injection current modulation in a semiconductor diode laser. The model includes the effect of lateral carrier diffusion across the active region of the laser diode. The modulation frequency dependence of the CPR is flat from dc to a few hundred megahertz, beyond which it is proportional to the modulation frequency.

  1. Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

    NASA Astrophysics Data System (ADS)

    Yang, Shuyu; Zhang, Yi; Li, Qi; Zhu, Xiaoliang; Bergman, Keren; Magill, Peter; Baehr-Jones, Thomas; Hochberg, Michael

    2015-02-01

    We report a hybrid integrated external cavity laser by butt coupling a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip. The device lasers at 1302 nm in the O-band, a wavelength regime critical to data communication systems. We measured 18 mW on-chip output power and over 50-dB side-mode suppression ratio. We also demonstrated open eye diagrams at 10 and 40 Gb/s.

  2. Drastic emission-spectra changes in a semiconductor laser owing to optical feedback from an optical connector

    SciTech Connect

    Matsuura, M.; Tanifuji, T.; Yamamoto, Y.

    1986-07-01

    The time-averaged longitudinal-mode power of a semiconductor laser coupled to fiber changes drastically when an external force is applied to a multimode fiber terminated with an optical connector. No emission-spectra changes have been observed in the case of a single-mode fiber. This phenomenon is considered to be induced by the wavelength-dependent change of the reflected field speckle intensity coupled into the laser-active region.

  3. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons.

    PubMed

    Medvid, Artur; Onufrijevs, Pavels; Mychko, Alexander

    2011-01-01

    On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

  4. All optical millimeter-wave electrical signal generation using an integrated mode-locked semiconductor ring laser and photodiode

    SciTech Connect

    Vawter, G.A.; Mar, A.; Hietala, V.; Zolper, J.; Hohimer, J.

    1997-12-01

    The first monolithic photonic integrated circuit for all-optical generation of millimeter (mm)-wave electrical signals is reported. The design integrates a mode-locked semiconductor ring diode laser, an optical amplifier, and a high-speed photodetector into a single optical integrated circuit. Signal generation is demonstrated at frequencies of 30, 60, and 90 GHz.

  5. Rate equation analysis of high-speed photon-lifetime-modulated strongly injection-locked semiconductor ring lasers

    NASA Astrophysics Data System (ADS)

    Kalagara, Hemashilpa; Smolyakov, Gennady A.; Osiński, Marek

    2013-02-01

    A novel method for modulation bandwidth enhancement is presented, involving strongly injection-locked whistle-geometry semiconductor ring laser modulated through photon lifetime. Advantages of photon-lifetime modulation over conventional injection-current modulation are confirmed through numerical modeling.

  6. Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

    NASA Technical Reports Server (NTRS)

    Suematsu, Y.; Iga, K.

    1980-01-01

    Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

  7. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing

    SciTech Connect

    Gu Quan; Hayes-Gill, Barrie R.; Morgan, Stephen P

    2008-04-20

    A 4x4 pixel array with analog on-chip processing has been fabricated within a 0.35 {mu}m complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate {omega}{sup 0.5} filter at the pixel level, this has been approximated using the ''roll off'' of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging.

  8. Modulation performance of semiconductor laser coupled with an ultra-short external cavity

    NASA Astrophysics Data System (ADS)

    Ahmed, Moustafa; Bakry, Ahmed

    2016-02-01

    We present modeling on the evaluation of the modulation performance of semiconductor laser coupled with an ultra-short external cavity in terms of the intensity modulation (IM) response, relative intensity noise (RIN), carrier to noise ratio (CNR), and frequency chirp. The modulation is characterized along the period-doubling (PD) route to chaos induced by optical feedback (OFB). We focus on the possibility of increasing the modulation bandwidth by improving the carrier-photon resonance (CPR) frequency or inducing resonant modulation due to photon-photon resonance (PPR). We show that along the route to chaos, OFB could increase the CPR frequency and improve the 3 dB-modulation bandwidth from 19 GHz to 28 GHz. When strong OFB keeps the continuous wave (CW) operation or induces periodic oscillation (PO), PPR becomes significant and reveals resonance modulation over mm-frequency passband exceeding 50 GHz. Both CNR and frequency chirp are also enhanced around the CPR and PPR frequencies. The highest CNR peak is obtained when modulating the CW or PO laser, whereas the maximum peak of chirp corresponds to non-modulated chaotic laser.

  9. Chemical reactions at metallic and metal/semiconductor interfaces stimulated by pulsed laser annealing

    NASA Astrophysics Data System (ADS)

    Petit, E. J.; Caudano, R.

    1992-01-01

    Multilayer Al/Sb thin films have been evaporated on GaSb single crystals in ultra-high vacuum and pulsed-laser irradiated in-situ above the energy density threshold for surface melting. Superficial and interfacial chemical reactions have been characterized in-situ by Auger electron spectroscopy; and later, by X-ray photoelectron spectroscopy profiling, Rutherford backscattering spectrometry and scanning electron microscopy. The chemical reaction between the Al and Sb films is considered as a model reaction for laser-assisted synthesis of high-purity intermetallic compounds. The observation of a strong interfacial reaction between the melted film and the substrate is also a subject of great concern for optical data recording and laser alloying of ohmic contacts on semiconductors. We show that a suitable choice of the substrate and adding a low surface tension element into the metallic film can improve its stability during melting, and prevent inhomogeneous reaction and formation of holes, cracks and particles. Finally, other solutions are suggested to improve the control of these reactions.

  10. Laser Doppler blood flow complementary metal oxide semiconductor imaging sensor with analog on-chip processing.

    PubMed

    Gu, Quan; Hayes-Gill, Barrie R; Morgan, Stephen P

    2008-04-20

    A 4 x 4 pixel array with analog on-chip processing has been fabricated within a 0.35 mum complementary metal oxide semiconductor process as a prototype sensor for laser Doppler blood flow imaging. At each pixel the bandpass and frequency weighted filters necessary for processing laser Doppler blood flow signals have been designed and fabricated. Because of the space constraints of implementing an accurate omega(0.5) filter at the pixel level, this has been approximated using the "roll off" of a high-pass filter with a cutoff frequency set at 10 kHz. The sensor has been characterized using a modulated laser source. Fixed pattern noise is present that is demonstrated to be repeatable across the array and can be calibrated. Preliminary blood flow results on a finger before and after occlusion demonstrate that the sensor array provides the potential for a system that can be scaled to a larger number of pixels for blood flow imaging.

  11. Numerical simulation of nonlinear mode interactions in ridge-waveguide semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Kalagara, Hemashilpa; Eliseev, Petr G.; Osinski, Marek

    2012-02-01

    Nonlinear perturbation of effective group index is calculated numerically in semiconductor ridge waveguide laser structures under an influence of a strong driving wave (mode). Model of nonlinear interaction of waves is used to obtain conditions for appearance of anomalous dispersion of modal index and also for inversion of the group index of guided waves (modes of the ridge-waveguide laser structures). Ranges around critically anomalous dispersion (CAD) points, where the effective group index passes zero value, are calculated numerically. CAD points form closed loops in graphs of detuning vs. driving wave intensity. These loops define ranges where superluminal propagation, as well as slowed reflection of probe wave can be obtained. Numerical simulations are performed for an InGaAs/AlGaAs/GaAs double quantum well (DQW) laser structure and also for a GaAs/AlGaAs separate confinement heterostructure. The threshold intensities for the appearance of CAD points, as well as the influence of relaxation rate and optical confinement on the appearance of superluminal regime are compared for the DQW and SCH structures.

  12. Random bit generation at tunable rates using a chaotic semiconductor laser under distributed feedback.

    PubMed

    Li, Xiao-Zhou; Li, Song-Sui; Zhuang, Jun-Ping; Chan, Sze-Chun

    2015-09-01

    A semiconductor laser with distributed feedback from a fiber Bragg grating (FBG) is investigated for random bit generation (RBG). The feedback perturbs the laser to emit chaotically with the intensity being sampled periodically. The samples are then converted into random bits by a simple postprocessing of self-differencing and selecting bits. Unlike a conventional mirror that provides localized feedback, the FBG provides distributed feedback which effectively suppresses the information of the round-trip feedback delay time. Randomness is ensured even when the sampling period is commensurate with the feedback delay between the laser and the grating. Consequently, in RBG, the FBG feedback enables continuous tuning of the output bit rate, reduces the minimum sampling period, and increases the number of bits selected per sample. RBG is experimentally investigated at a sampling period continuously tunable from over 16 ns down to 50 ps, while the feedback delay is fixed at 7.7 ns. By selecting 5 least-significant bits per sample, output bit rates from 0.3 to 100 Gbps are achieved with randomness examined by the National Institute of Standards and Technology test suite.

  13. Quantitative photoacoustic blood oxygenation measurement of whole porcine blood samples using a multi-wavelength semiconductor laser system

    NASA Astrophysics Data System (ADS)

    Friedrich, Claus-Stefan; Mienkina, Martin P.; Brenner, Carsten; Gerhardt, Nils C.; Jörger, Manfred; Strauß, Andreas; Beckmann, Martin F.; Schmitz, Georg; Hofmann, Martin R.

    2011-07-01

    We present a photoacoustic measurement system based on semiconductor lasers for blood oxygenation measurements. It permits to use four different optical wavelengths (650nm, 808nm, 850nm, 905nm) to generate photoacoustic signals. As the optical extinction coefficient of oxygenated hemoglobin and deoxygenated hemoglobin is different at specific wavelengths, a blood oxygenation measurement by a multi-wavelength photoacoustic laser system is feasible. Especially at 650nm, the clear difference between the extinction coefficients of the two hemoglobin derivates permits to determine the blood oxygenation in combination with other near infrared wavelengths. A linear model based on tabulated values of extinction coefficients for fully oxygenated and fully deoxygenated hemoglobin is presented. We used heparin stabilized whole porcine blood samples to model the optical behavior of human blood, as the optical absorption behavior of porcine hemoglobin does not differ significantly from human hemoglobin. To determine the real oxygen saturation values of the blood samples, we measured the partial oxygen pressure with an IRMA Trupoint Blood Analysis System. The oxygen saturation values were calculated from a dissociation curve for porcine blood. The results of the photoacoustic measurement are in qualitatively good agreement with the predicted linear model. Further, we analyze the abilities and the limitations of quantitative oxygenation measurements.

  14. Limits imposed by nonlinear coupling on rotation sensitivity of a semiconductor ring laser gyroscope.

    PubMed

    Khandelwal, Arpit; Syed, Azeemuddin; Nayak, Jagannath

    2016-07-01

    The sensitivity of a monolithically integrated semiconductor ring laser gyro is severely limited by the high value of the lock-in threshold. In this work, we calculate the lock-in threshold using perturbation theory and coupled mode theory analysis. It is shown that gyro sensitivity is limited to an input rotation rate of 108  deg / h due to nonlinear coupling between the countertraveling modes. This coupling arises due to the backreflection of modes from moving index gratings, induced by rotation. Lock-in threshold is directly proportional to the strength of nonlinear coupling and spatial overlap of the modes' energy densities with periodic index perturbations. PMID:27409208

  15. Synchronization of two GaAs photoconductive semiconductor switches triggered by two laser diodes.

    PubMed

    Xu, Ming; Bian, Kangkang; Ma, Cheng; Jia, Hangjuan; An, Xin; Shi, Wei

    2016-09-15

    In this Letter, we show the synchronization of two 2-mm-gap gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS), which are in parallel and triggered by two laser diodes (LDs) independently. The comparison of the synchronization is measured by varying the bias electric field and optical excitation energy, respectively. An optimum synchronization is achieved as low as 200.5 ps, while the GaAs PCSS are biased at 1.2 kV with optical excitation energy of 1.91 μJ. The simulations demonstrate the relationship between the synchronization, the carriers average drift velocity, and the number of carriers undergoing intervalley scattering. PMID:27628404

  16. Ultrasensitive detection of cell lysing in an microfabricated semiconductor laser cavity

    SciTech Connect

    Gourley, P.L.; French, T.; McDonald, A.E.; Shields, E.A.; Gourley, M.F.

    1998-01-01

    In this paper the authors report investigations of semiconductor laser microcavities for use in detecting changes of human blood cells during lysing. By studying the spectra before and during mixing of blood fluids with de-ionized water, they are able to quantify the cell shape and concentration of hemoglobin in real time during the dynamical process of lysing. The authors find that the spectra can detect subtle changes that are orders of magnitude smaller than can be observed by standard optical microscopy. Such sensitivity in observing cell structural changes has implications for measuring cell fragility, monitoring apoptotic events in real time, development of photosensitizers for photodynamic therapy, and in-vitro cell micromanipulation techniques.

  17. Synchronization of two GaAs photoconductive semiconductor switches triggered by two laser diodes.

    PubMed

    Xu, Ming; Bian, Kangkang; Ma, Cheng; Jia, Hangjuan; An, Xin; Shi, Wei

    2016-09-15

    In this Letter, we show the synchronization of two 2-mm-gap gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS), which are in parallel and triggered by two laser diodes (LDs) independently. The comparison of the synchronization is measured by varying the bias electric field and optical excitation energy, respectively. An optimum synchronization is achieved as low as 200.5 ps, while the GaAs PCSS are biased at 1.2 kV with optical excitation energy of 1.91 μJ. The simulations demonstrate the relationship between the synchronization, the carriers average drift velocity, and the number of carriers undergoing intervalley scattering.

  18. Noise power spectral density of a fibre scattered-light interferometer with a semiconductor laser source

    SciTech Connect

    Alekseev, A E; Potapov, V T

    2013-10-31

    Spectral characteristics of the noise intensity fluctuations at the output of a scattered-light interferometer, caused by phase fluctuations of semiconductor laser radiation are considered. This kind of noise is one of the main factors limiting sensitivity of interferometric sensors. For the first time, to our knowledge, the expression is obtained for the average noise power spectral density at the interferometer output versus the degree of a light source coherence and length of the scattering segment. Also, the approximate expressions are considered which determine the power spectral density in the low-frequency range (up to 200 kHz) and in the limiting case of extended scattering segments. The expression obtained for the noise power spectral density agrees with experimental normalised power spectra with a high accuracy. (interferometry of radiation)

  19. Experimental investigation of anti-colliding pulse mode-locked semiconductor lasers.

    PubMed

    Zhuang, Jun-Ping; Pusino, Vincenzo; Ding, Ying; Chan, Sze-Chun; Sorel, Marc

    2015-02-15

    We experimentally demonstrate anti-colliding pulse mode-locking (ACPML) in an integrated semiconductor laser. The device geometry consists of a gain section and a saturable absorber (SA) section located immediately next to one of the cavity facets. After depositing a low-reflection coating on the SA facet and a high-reflection coating on the gain section facet, the threshold is unchanged, while the modulation of the SA is increased. The data presented here confirm that the ACPML configuration improves the peak output power of the pulses, reduces the amplitude fluctuation and timing jitter, and expands the biasing parameter range over which the stable mode-locking operation occurs. PMID:25680164

  20. Semiconductor product analysis challenges based on the 1999 ITRS

    SciTech Connect

    JOSEPH,THOMAS W.; ANDERSON,RICHARD E.; GILFEATHER,GLEN; LECLAIRE,CAROLE; YIM,DANIEL

    2000-05-30

    One of the most significant challenges for technology characterization and future analysis is to keep instrumentation and techniques in step with the development of technology itself. Not only are dimensions shrinking and new materials being employed, but the rate of change is increasing. According to the 1999 International Technology Roadmap for Semiconductors (ITRS) the number and difficulty of the technical challenges continue to increase as technology moves forward. It could be argued that technology cannot be developed without appropriate analytical technique, nevertheless while much effort is being directed at materials and processes, only a small proportion is being directed at analysis. Whereas previous versions of the Semiconductor Industry Association roadmap contained a small number of implicit references to characterization and analysis, the 1999 ITRS contains many explicit references. It is clear that characterization is now woven through the roadmap, and technology developers in all areas appreciate the fact that new instrumentation and techniques will be required to sustain the rate of development the semiconductor industry has seen in recent years. Late in 1999, a subcommittee of the Sematech Product Analysis Forum reviewed the ITRS and identified a top-ten list of challenges which the failure analysis community will face as present technologies are extended and future technologies are developed. This paper discusses the PAF top-ten list of challenges, which is based primarily on the Difficult Challenges tables from each ITRS working group. Eight of the top-ten are challenges of significant technical magnitude, only two could be considered non-technical in nature. Most of these challenges cut across several working group areas and could be considered common threads in the roadmap, ranging from fault simulation and modeling to imaging small features, from electrical defect isolation to reprocessing.

  1. Continuously tunable Yb:KYW femtosecond oscillator based on a tunable highly dispersive semiconductor mirror.

    PubMed

    Wnuk, P; Wasylczyk, P; Zinkiewicz, Ł; Dems, M; Hejduk, K; Regiński, K; Wójcik-Jedlińska, A; Jasik, A

    2014-07-28

    The optimized nonuniform growth process was used to achieve spatially dependent reflectivity and dispersions characteristics in a highly dispersive semiconductor mirror. The mirror, together with a semiconductor saturable absorber mirror (SESAM), was used to demonstrate a tunable femtosecond Yb:KYW oscillator. In the passive modelocking regime the laser could be continuously tuned over 3.5 nm spectral band around 1032 nm with high resolution, maintaining the average output power above 140 mW. PMID:25089448

  2. Utilizing the transparency of semiconductors via "backside" machining with a nanosecond 2 μm Tm:fiber laser

    NASA Astrophysics Data System (ADS)

    Gehlich, Nils; Bonhoff, Tobias; Sisken, Laura; Ramme, Mark; Gaida, Christian; Gebhardt, Martin; Mingareev, Ilya; Shah, Lawrence; Richardson, Martin C.

    2014-03-01

    Semiconductors such as Si and GaAs are transparent to infrared laser radiation with wavelengths >1.2 μm. Focusing laser light at the back surface of a semiconductor wafer enables a novel processing regime that utilizes this transparency. However, in previous experiments with ultrashort laser pulses we have found that nonlinear absorption makes it impossible to achieve sufficient optical intensity to induce material modification far below the front surface. Using a recently developed Tm:fiber laser system producing pulses as short as 7 ns with peak powers exceeding 100 kW, we have demonstrated it is possible to ablate the "backside" surface of 500-600 μm thick Si and GaAs wafers. We studied laser-induced morphology changes at front and back surfaces of wafers and obtained modification thresholds for multipulse irradiation and surface processing in trenches. A significantly higher back surface modification threshold in Si compared to front surface is possibly attributed to nonlinear absorption and light propagation effects. This unique processing regime has the potential to enable novel applications such as semiconductor welding for microelectronics, photovoltaic, and consumer electronics.

  3. Calibration-free absolute frequency response measurement of directly modulated lasers based on additional modulation.

    PubMed

    Zhang, Shangjian; Zou, Xinhai; Wang, Heng; Zhang, Yali; Lu, Rongguo; Liu, Yong

    2015-10-15

    A calibration-free electrical method is proposed for measuring the absolute frequency response of directly modulated semiconductor lasers based on additional modulation. The method achieves the electrical domain measurement of the modulation index of directly modulated lasers without the need for correcting the responsivity fluctuation in the photodetection. Moreover, it doubles measuring frequency range by setting a specific frequency relationship between the direct and additional modulation. Both the absolute and relative frequency response of semiconductor lasers are experimentally measured from the electrical spectrum of the twice-modulated optical signal, and the measured results are compared to those obtained with conventional methods to check the consistency. The proposed method provides calibration-free and accurate measurement for high-speed semiconductor lasers with high-resolution electrical spectrum analysis.

  4. Gain compression effect on the modulation dynamics of an optically injection-locked semiconductor laser using gain lever

    NASA Astrophysics Data System (ADS)

    Sarraute, J.-M.; Schires, K.; LaRochelle, S.; Grillot, F.

    2016-03-01

    The modulation response of an optically-injected gain lever semiconductor laser is studied and calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultra large bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. The impact of the gain compression on the modulation dynamic is discussed for the first time. This work is of prime importance for the development of directly-modulated broadband optical sources for high-speed operation at 40 Gbps and beyond.

  5. Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch.

    PubMed

    Shi, Wei; Gui, Huaimeng; Zhang, Lin; Ma, Cheng; Li, Mengxia; Xu, Ming; Wang, Luyi

    2013-07-01

    The effects of trigger laser pulse width on the jitter time of a GaAs photoconductive semiconductor switch (PCSS) is investigated in the experiment. The laser is split into two optical beams by a cross grating to excite two 3 mm gap GaAs PCSSs in parallel at the same time. This work reveals that the jitter time of the GaAs PCSS is reduced as the trigger laser pulse width decreases. Our results overcome a significant obstacle that hinders the testing and theory of GaAs PCSSs in high-time-precision synchronous control.

  6. Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser

    SciTech Connect

    Slipchenko, S. O. Podoskin, A. A.; Pikhtin, N. A.; Sokolova, Z. N.; Leshko, A. Y.; Tarasov, I. S.

    2011-05-15

    Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied at a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.

  7. Ultrahigh supermode noise suppressing ratio of a semiconductor optical amplifier filtered harmonically mode-locked Erbium-doped fiber laser.

    PubMed

    Lin, Gong-Ru; Wu, Ming-Chung; Chang, Yung-Cheng; Pan, Ci-Ling

    2005-09-01

    The supermode noise suppressing ratio (SMSR) and the phase noise of a harmonically mode-locked Erbium-doped fiber laser (HML-EDFL) with an intra-cavity semiconductor optical amplifier (SOA) and an optical band-pass filter (OBPF) are improved and compared with a state-of-the-art Fabry-Perot laser diode (FPLD) injection-mode-locked EDFL. By driving the intra-cavity SOA based high-pass filter at unitary gain condition, the SMSR of the HML-EDFL is enhanced to 82 dB at the cost of degrading phase noise, increasing jitter, and broadened pulse width. The adding of OBPF further improves the SMSR, pulse width, phase noise, and jitter of the SOA-filtered HML-EDFL to 90 dB, 42 ps, -112 dBc/Hz, and 0.7 ps, respectively. The ultrahigh SMSR of the SOA-filtered HML-EDFL can compete with that of the FPLD injection-mode-locked EDFL without sacrificing its pulse width and jitter performances. PMID:19498744

  8. The 1.1 micrometer and visible emission semiconductor diode lasers. [(AlGa)As lasers

    NASA Technical Reports Server (NTRS)

    Ladany, I.; Nuese, C. J.; Kressel, H.

    1978-01-01

    In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

  9. InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.

    PubMed

    Schlosser, Peter J; Hastie, Jennifer E; Calvez, Stephane; Krysa, Andrey B; Dawson, Martin D

    2009-11-23

    Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532 nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52 mW at 739 nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively. PMID:19997421

  10. [Laser-based radiometric calibration].

    PubMed

    Li, Zhi-gang; Zheng, Yu-quan

    2014-12-01

    Increasingly higher demands are put forward to spectral radiometric calibration accuracy and the development of new tunable laser based spectral radiometric calibration technology is promoted, along with the development of studies of terrestrial remote sensing, aeronautical and astronautical remote sensing, plasma physics, quantitative spectroscopy, etc. Internationally a number of national metrology scientific research institutes have built tunable laser based spectral radiometric calibration facilities in succession, which are traceable to cryogenic radiometers and have low uncertainties for spectral responsivity calibration and characterization of detectors and remote sensing instruments in the UK, the USA, Germany, etc. Among them, the facility for spectral irradiance and radiance responsivity calibrations using uniform sources (SIRCCUS) at the National Institute of Standards and Technology (NIST) in the USA and the Tunable Lasers in Photometry (TULIP) facility at the Physikalisch-Technische Bundesanstalt (PTB) in Germany have more representatives. Compared with lamp-monochromator systems, laser based spectral radiometric calibrations have many advantages, such as narrow spectral bandwidth, high wavelength accuracy, low calibration uncertainty and so on for radiometric calibration applications. In this paper, the development of laser-based spectral radiometric calibration and structures and performances of laser-based radiometric calibration facilities represented by the National Physical Laboratory (NPL) in the UK, NIST and PTB are presented, technical advantages of laser-based spectral radiometric calibration are analyzed, and applications of this technology are further discussed. Laser-based spectral radiometric calibration facilities can be widely used in important system-level radiometric calibration measurements with high accuracy, including radiance temperature, radiance and irradiance calibrations for space remote sensing instruments, and promote the

  11. [Laser-based radiometric calibration].

    PubMed

    Li, Zhi-gang; Zheng, Yu-quan

    2014-12-01

    Increasingly higher demands are put forward to spectral radiometric calibration accuracy and the development of new tunable laser based spectral radiometric calibration technology is promoted, along with the development of studies of terrestrial remote sensing, aeronautical and astronautical remote sensing, plasma physics, quantitative spectroscopy, etc. Internationally a number of national metrology scientific research institutes have built tunable laser based spectral radiometric calibration facilities in succession, which are traceable to cryogenic radiometers and have low uncertainties for spectral responsivity calibration and characterization of detectors and remote sensing instruments in the UK, the USA, Germany, etc. Among them, the facility for spectral irradiance and radiance responsivity calibrations using uniform sources (SIRCCUS) at the National Institute of Standards and Technology (NIST) in the USA and the Tunable Lasers in Photometry (TULIP) facility at the Physikalisch-Technische Bundesanstalt (PTB) in Germany have more representatives. Compared with lamp-monochromator systems, laser based spectral radiometric calibrations have many advantages, such as narrow spectral bandwidth, high wavelength accuracy, low calibration uncertainty and so on for radiometric calibration applications. In this paper, the development of laser-based spectral radiometric calibration and structures and performances of laser-based radiometric calibration facilities represented by the National Physical Laboratory (NPL) in the UK, NIST and PTB are presented, technical advantages of laser-based spectral radiometric calibration are analyzed, and applications of this technology are further discussed. Laser-based spectral radiometric calibration facilities can be widely used in important system-level radiometric calibration measurements with high accuracy, including radiance temperature, radiance and irradiance calibrations for space remote sensing instruments, and promote the

  12. Heavy-Tailed Fluctuations in the Spiking Output Intensity of Semiconductor Lasers with Optical Feedback

    PubMed Central

    2016-01-01

    Although heavy-tailed fluctuations are ubiquitous in complex systems, a good understanding of the mechanisms that generate them is still lacking. Optical complex systems are ideal candidates for investigating heavy-tailed fluctuations, as they allow recording large datasets under controllable experimental conditions. A dynamical regime that has attracted a lot of attention over the years is the so-called low-frequency fluctuations (LFFs) of semiconductor lasers with optical feedback. In this regime, the laser output intensity is characterized by abrupt and apparently random dropouts. The statistical analysis of the inter-dropout-intervals (IDIs) has provided many useful insights into the underlying dynamics. However, the presence of large temporal fluctuations in the IDI sequence has not yet been investigated. Here, by applying fluctuation analysis we show that the experimental distribution of IDI fluctuations is heavy-tailed, and specifically, is well-modeled by a non-Gaussian stable distribution. We find a good qualitative agreement with simulations of the Lang-Kobayashi model. Moreover, we uncover a transition from a less-heavy-tailed state at low pump current to a more-heavy-tailed state at higher pump current. Our results indicate that fluctuation analysis can be a useful tool for investigating the output signals of complex optical systems; it can be used for detecting underlying regime shifts, for model validation and parameter estimation. PMID:26901346

  13. Nonlinear dynamics in semiconductor ring lasers with negative optoelectronic and incoherent optical feedback

    NASA Astrophysics Data System (ADS)

    Kingni, S. T.; Van der Sande, G.; Ermakov, Ilya V.; Danckaert, J.

    2014-05-01

    In this work, we study theoretically the dynamical behavior of two semiconductor ring lasers (SRLs). One is subject to negative optoelectronic feedback and the other laser is subject to incoherent optical feedback. Relying on asymptotic methods, we are able to reduce the original set of five equations used to describe the dynamical behavior of SRLs with negative optoelectronic feedback (SRL-NOEF) or incoherent optical feedback (SRL-IOF) to two equations and one map with time delay valid on time-scales longer than the relaxation oscillations (ROs). The equations of the reduced models turn out to be the same for both systems. As we vary the feedback strength, the devices under consideration in this work display both continuous wave operation and a period-doubling route to chaos. The two counter-propagating intensities of both systems exhibit in-phase chaotic behavior for small delay times comparable to the period of relaxation oscillations. For delay times significantly longer than the period of ROs, the two counter-propagating modes show in anti-phase chaotic oscillations. Moreover, for long delay times, we find that the counter-propagating intensities of both systems depict the same dynamical behaviors when their feedback strengths are increased.

  14. Detection of a 2.8 THz quantum cascade laser with a semiconductor nanowire field-effect transistor coupled to a bow-tie antenna

    SciTech Connect

    Ravaro, M. Locatelli, M.; Consolino, L.; Bartalini, S.; De Natale, P.; Viti, L.; Ercolani, D.; Sorba, L.; Vitiello, M. S.

    2014-02-24

    The use of a high-electron mobility semiconductor nanowire as transistor channel has recently allowed the extension of the spectral coverage of THz field-effect transistor detectors up to 1.5 THz. In this report, we demonstrate efficient operation of a field-effect transistor detector based on a semiconductor nanowire at a much higher frequency, 2.8 THz, with a responsivity ≈5 V/W in a bandwidth ≈100 kHz, thus proving the full potential of such approach for the detection of THz quantum cascade lasers. Finally, such a THz sensing system is exploited to perform raster scan transmission imaging, with high spatial resolution, signal-to-noise ratio, and acquisition rate.

  15. Low SWaP Semiconductor Laser Transmitter Modules For ASCENDS Mission Applications

    NASA Technical Reports Server (NTRS)

    Prasad, Narasimha S.; Rosiewicz, Alex; Coleman, Steven M.

    2012-01-01

    The National Research Council's (NRC) Decadal Survey (DS) of Earth Science and Applications from Space has identified the Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) as an important atmospheric science mission. NASA Langley Research Center, working with its partners, is developing fiber laser architecture based intensity modulated CW laser absorption spectrometer for measuring XCO2 in the 1571 nm spectral band. In support of this measurement, remote sensing of O2 in the 1260 nm spectral band for surface pressure measurements is also being developed. In this paper, we will present recent progress made in the development of advanced transmitter modules for CO2 and O2 sensing. Advanced DFB seed laser modules incorporating low-noise variable laser bias current supply and low-noise variable temperature control circuit have been developed. The 1571 nm modules operate at >80 mW and could be tuned continuously over the wavelength range of 1569-1574nm at a rate of 2 pm/mV. Fine tuning was demonstrated by adjusting the laser drive at a rate of 0.7 pm/mV. Heterodyne linewidth measurements have been performed showing linewidth 200 kHz and frequency jitter 75 MHz. In the case of 1260 nm DFB laser modules, we have shown continuous tuning over a range of 1261.4 - 1262.6 nm by changing chip operating temperature and 1261.0 - 1262.0 nm by changing the laser diode drive level. In addition, we have created a new laser package configuration which has been shown to improve the TEC coefficient of performance by a factor of 5 and improved the overall efficiency of the laser module by a factor of 2.

  16. Semiconductor metal oxide compounds based gas sensors: A literature review

    NASA Astrophysics Data System (ADS)

    Patil, Sunil Jagannath; Patil, Arun Vithal; Dighavkar, Chandrakant Govindrao; Thakare, Kashinath Shravan; Borase, Ratan Yadav; Nandre, Sachin Jayaram; Deshpande, Nishad Gopal; Ahire, Rajendra Ramdas

    2015-03-01

    This paper gives a statistical view about important contributions and advances on semiconductor metal oxide (SMO) compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas (LPG), H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein.

  17. Supramolecular Luminescence from Oligofluorenol-Based Supramolecular Polymer Semiconductors

    PubMed Central

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-01-01

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics. PMID:24232455

  18. Hydrogen Gas Sensors Based on Semiconductor Oxide Nanostructures

    PubMed Central

    Gu, Haoshuang; Wang, Zhao; Hu, Yongming

    2012-01-01

    Recently, the hydrogen gas sensing properties of semiconductor oxide (SMO) nanostructures have been widely investigated. In this article, we provide a comprehensive review of the research progress in the last five years concerning hydrogen gas sensors based on SMO thin film and one-dimensional (1D) nanostructures. The hydrogen sensing mechanism of SMO nanostructures and some critical issues are discussed. Doping, noble metal-decoration, heterojunctions and size reduction have been investigated and proved to be effective methods for improving the sensing performance of SMO thin films and 1D nanostructures. The effect on the hydrogen response of SMO thin films and 1D nanostructures of grain boundary and crystal orientation, as well as the sensor architecture, including electrode size and nanojunctions have also been studied. Finally, we also discuss some challenges for the future applications of SMO nanostructured hydrogen sensors. PMID:22778599

  19. Supramolecular luminescence from oligofluorenol-based supramolecular polymer semiconductors.

    PubMed

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-11-13

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics.

  20. [Study on packaging-induced stress in 4 mm cavity length high-power single emitter semiconductor laser].

    PubMed

    Zhang, Yong; Yang, Rui-xia; An, Zhen-feng; Xu, Hui-wu

    2014-06-01

    To reduce packaging-induced stress of long cavity length high-power single emitter semiconductor laser, the relationship between the stress and the wavelength shift was deduced on the basis of the theory that the stress can change the band gap. A method was developed for quantitatively calculating the stress by measuring the emission spectrum of the laser under pulse conditions. The results show that the soldering quality is a critical factor affecting thermal stress. The difference in stress can exceed 300 MPa due to the difference in soldering quality. By optimizing the reflowing soldering curve of the laser, the stress of the laser drops from 129.7 to 53.4 MPa. This method can also effectively solve the problem that the stress varies with storage time. This work demonstrates that the measurement and analysis of the emission spectrum of the laser can provide a useful method to study packaging stress of the high-power single emitter semiconductor laser. It is also an available means to evaluate and analyze soldering quality. PMID:25358141