High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

PubMed Central

Khanal, Sudeep; Gao, Liang; Zhao, Le; Reno, John L.; Kumar, Sushil

2016-01-01

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, terahertz QCLs with bidirectional operation are developed to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al0.10Ga0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimal quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al0.15Ga0.85As material system. Broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. These are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays. PMID:27615416

High-temperature operation of broadband bidirectional terahertz quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khanal, Sudeep; Gao, Liang; Zhao, Le

Terahertz quantum cascade lasers (QCLs) with a broadband gain medium could play an important role for sensing and spectroscopy since then distributed-feedback schemes could be utilized to produce laser arrays on a single semiconductor chip with wide spectral coverage. QCLs can be designed to emit at two different frequencies when biased with opposing electrical polarities. Here, we develop terahertz QCLs with bidirectional operation to achieve broadband lasing from the same semiconductor chip. A three-well design scheme with shallow-well GaAs/Al 0.10Ga 0.90As superlattices is developed to achieve high-temperature operation for bidirectional QCLs. It is shown that shallow-well heterostructures lead to optimalmore » quantum-transport in the superlattice for bidirectional operation compared to the prevalent GaAs/Al 0.15Ga 0.85As material system. Furthermore, broadband lasing in the frequency range of 3.1–3.7 THz is demonstrated for one QCL design, which achieves maximum operating temperatures of 147 K and 128 K respectively in opposing polarities. Dual-color lasing with large frequency separation is demonstrated for a second QCL, that emits at ~3.7 THz and operates up to 121 K in one polarity, and at ~2.7 THz up to 105 K in the opposing polarity. Finally, these are the highest operating temperatures achieved for broadband terahertz QCLs at the respective emission frequencies, and could lead to commercial development of broadband terahertz laser arrays.« less

Phase-locked laser array having a non-uniform spacing between lasing regions

NASA Technical Reports Server (NTRS)

Ackley, Donald E. (Inventor)

1986-01-01

A phase-locked semiconductor array wherein the lasing regions of the array are spaced an effective distance apart such that the modes of oscillation of the different lasing regions are phase-locked to one another. The center-to-center spacing between the lasing regions is non-uniform. This variation in spacing perturbs the preferred 180.degree. phase difference between adjacent lasing regions thereby providing an increased yield of arrays exhibiting a single-lobed, far-field radiation pattern.

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yating; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towardsmore » dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.« less

Phase-locked laser array

NASA Technical Reports Server (NTRS)

Botez, Dan (Inventor)

1987-01-01

A phase-locked laser array comprises a body of semiconductor material having means for defining a plurality of substantially parallel lasing zones which are spaced an effective distance apart so that the modes of the adjacent lasing zones are phase-locked to one another. One of the array electrodes comprises a plurality of electrical contacts to the body between the lasing zones. These contacts provide an enhanced current density profile and thus an increase in the gain in the regions between the lasing zones so that zero degree phase-shift operation between adjacent lasing zones is achievable.

Lasing from lead halide perovskite semiconductor microcavity system.

PubMed

Wang, Jun; Da, Peimei; Zhang, Zhe; Luo, Song; Liao, Liming; Sun, Zeyuan; Shen, Xuechu; Wu, Shiwei; Zheng, Gengfeng; Chen, Zhanghai

2018-06-07

Organic-inorganic halide perovskite semiconductors are ideal gain media for fabricating laser and photonic devices due to high absorption, photoluminescence (PL) efficiency and low nonradiative recombination losses. Herein, organic-inorganic halide perovskite CH3NH3PbI3 is embedded in the Fabry-Perot (FP) microcavity, and a wavelength-tunable excitonic lasing with a threshold of 12.9 μJ cm-2 and the spectral coherence of 0.76 nm are realized. The lasing threshold decreases and the spectral coherence enhances as the temperature decreases; these results are ascribed to the suppression of exciton irradiative recombination caused by thermal fluctuation. Moreover, both lasing and light emission below threshold from the perovskite microcavity (PM) system demonstrate a redshift with the decreasing temperature. These results provide a feasible platform based on the PM system for the study of light-matter interaction for quantum optics and the development of optoelectronic devices such as polariton lasers.

Narrow line width dual wavelength semiconductor optical amplifier based random fiber laser

NASA Astrophysics Data System (ADS)

Shawki, Heba A.; Kotb, Hussein E.; Khalil, Diaa

2018-02-01

A novel narrow line-width Single longitudinal mode (SLM) dual wavelength random fiber laser of 20 nm separation between wavelengths of 1530 and 1550 nm is presented. The laser is based on Rayleigh backscattering in a standard single mode fiber of 2 Km length as distributed mirrors, and a semiconductor optical amplifier (SOA) as the optical amplification medium. Two optical bandpass filters are used for the two wavelengths selectivity, and two Faraday Rotator mirrors are used to stabilize the two lasing wavelengths against fiber random birefringence. The optical signal to noise ratio (OSNR) was measured to be 38 dB. The line-width of the laser was measured to be 13.3 and 14 KHz at 1530 and 1550 nm respectively, at SOA pump current of 370 mA.

Coherent perfect absorption in a homogeneously broadened two-level medium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Longhi, Stefano

2011-05-15

In recent works, it has been shown, rather generally, that the time-reversed process of lasing at threshold realizes a coherent perfect absorber (CPA). In a CPA, a lossy medium in an optical cavity with a specific degree of dissipation, equal in modulus to the gain of the lasing medium, can perfectly absorb coherent optical waves that are the time-reversed counterpart of the lasing field. Here, the time-reversed process of lasing is considered in detail for a homogeneously broadened two-level medium in an optical cavity and the conditions for CPA are derived. It is shown that, owing to the dispersive propertiesmore » of the two-level medium, exact time-reversal symmetry is broken and the frequency of the field at which CPA occurs is generally different than the one of the lasing mode. Moreover, at a large cooperation parameter, the observation of CPA in the presence of bistability requires one to operate in the upper branch of the hysteresis cycle.« less

Enhanced Exciton and Photon Confinement in Ruddlesden-Popper Perovskite Microplatelets for Highly Stable Low-Threshold Polarized Lasing.

PubMed

Li, Mingjie; Wei, Qi; Muduli, Subas Kumar; Yantara, Natalia; Xu, Qiang; Mathews, Nripan; Mhaisalkar, Subodh G; Xing, Guichuan; Sum, Tze Chien

2018-06-01

At the heart of electrically driven semiconductors lasers lies their gain medium that typically comprises epitaxially grown double heterostuctures or multiple quantum wells. The simultaneous spatial confinement of charge carriers and photons afforded by the smaller bandgaps and higher refractive index of the active layers as compared to the cladding layers in these structures is essential for the optical-gain enhancement favorable for device operation. Emulating these inorganic gain media, superb properties of highly stable low-threshold (as low as ≈8 µJ cm -2 ) linearly polarized lasing from solution-processed Ruddlesden-Popper (RP) perovskite microplatelets are realized. Detailed investigations using microarea transient spectroscopies together with finite-difference time-domain simulations validate that the mixed lower-dimensional RP perovskites (functioning as cladding layers) within the microplatelets provide both enhanced exciton and photon confinement for the higher-dimensional RP perovskites (functioning as the active gain media). Furthermore, structure-lasing-threshold relationship (i.e., correlating the content of lower-dimensional RP perovskites in a single microplatelet) vital for design and performance optimization is established. Dual-wavelength lasing from these quasi-2D RP perovskite microplatelets can also be achieved. These unique properties distinguish RP perovskite microplatelets as a new family of self-assembled multilayer planar waveguide gain media favorable for developing efficient lasers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers

NASA Astrophysics Data System (ADS)

Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

2013-05-01

We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser's active region size and structure by using the intentionally introduced disorder is also carefully considered.

Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems

NASA Astrophysics Data System (ADS)

Shchukin, V. A.; Ledentsov, N. N.; Slight, T.; Meredith, W.; Gordeev, N. Y.; Nadtochy, A. M.; Payusov, A. S.; Maximov, M. V.; Blokhin, S. A.; Blokhin, A. A.; Zadiranov, Yu. M.; Maleev, N. A.; Ustinov, V. M.; Choquette, K. D.

2016-03-01

A concept of passive cavity surface-emitting laser is proposed aimed to control the temperature shift of the lasing wavelength. The device contains an all-semiconductor bottom distributed Bragg reflector (DBR), in which the active medium is placed, a dielectric resonant cavity and a dielectric top DBR, wherein at least one of the dielectric materials has a negative temperature coefficient of the refractive index, dn/dT < 0. This is shown to be the case for commonly used dielectric systems SiO2/TiO2 and SiO2/Ta2O5. Two SiO2/TiO2 resonant structures having a cavity either of SiO2 or TiO2 were deposited on a substrate, their optical power reflectance spectra were measured at various temperatures, and refractive index temperature coefficients were extracted, dn/dT = 0.0021 K-1 for SiO2 and dn/dT = -0.0092 K-1 for TiO2. Using such dielectric materials allows designing passive cavity surface-emitting lasers having on purpose either positive, or zero, or negative temperature shift of the lasing wavelength dλ/dT. A design for temperature-insensitive lasing wavelength (dλ/dT = 0) is proposed. Employing devices with temperature-insensitive lasing wavelength in wavelength division multiplexing systems may allow significant reducing of the spectral separation between transmission channels and an increase in number of channels for a defined spectral interval enabling low cost energy efficient uncooled devices.

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

NASA Technical Reports Server (NTRS)

Hu, Qing (Inventor); Williams, Benjamin S. (Inventor)

2007-01-01

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

NASA Technical Reports Server (NTRS)

Williams, Benjamin S. (Inventor); Hu, Qing (Inventor)

2009-01-01

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Lasing properties of polymerized chiral nematic Bragg onion microlasers.

PubMed

Humar, Matjaž; Araoka, Fumito; Takezoe, Hideo; Muševič, Igor

2016-08-22

Dye doped photocurable cholesteric liquid crystal was used to produce solid Bragg onion omnidirectional lasers. The lasers were produced by dispersing and polymerizing chiral nematic LC with parallel surface anchoring of LC molecules at the interface, extracted and transferred into another medium. Lasing characteristics were studied in carrier medium with different refractive index. The lasing in spherical cholesteric liquid crystal was attributed to two mechanisms, photonic bandedge lasing and lasing of whispering-gallery modes. The latter can be suppressed by using a higher index carrier fluid to prevent total internal reflection on the interface of the spheres. Pulse-to-pulse stability and threshold characteristics were also studied and compared to non-polymerized lasers. The polymerization process greatly increases the lasing stability.

Apparatus for millimeter-wave signal generation

DOEpatents

Vawter, G. Allen; Hietala, Vincent M.; Zolper, John C.; Mar, Alan; Hohimer, John P.

1999-01-01

An opto-electronic integrated circuit (OEIC) apparatus is disclosed for generating an electrical signal at a frequency .gtoreq.10 GHz. The apparatus, formed on a single substrate, includes a semiconductor ring laser for generating a continuous train of mode-locked lasing pulses and a high-speed photodetector for detecting the train of lasing pulses and generating the electrical signal therefrom. Embodiments of the invention are disclosed with an active waveguide amplifier coupling the semiconductor ring laser and the high-speed photodetector. The invention has applications for use in OEICs and millimeter-wave monolithic integrated circuits (MMICs).

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

PicoGreen dye as an active medium for plastic lasers

NASA Astrophysics Data System (ADS)

Pradeep, C.; Vallabhan, C. P. G.; Radhakrishnan, P.; Nampoori, V. P. N.

2015-08-01

Deoxyribonucleic acid lipid complex thin films are used as a host material for laser dyes. We tested PicoGreen dye, which is commonly used for the quantification of single and double stranded DNA, for its applicability as lasing medium. PicoGreen dye exhibits enhanced fluorescence on intercalation with DNA. This enormous fluorescence emission is amplified in a planar microcavity to achieve yellow lasing. Here the role of DNA is not only a host medium, but also as a fluorescence dequencher. With the obtained results we have ample reasons to propose PicoGreen dye as a lasing medium, which can lead to the development of DNA based bio-lasers.

Continuous-wave lasing in an organic-inorganic lead halide perovskite semiconductor

NASA Astrophysics Data System (ADS)

Jia, Yufei; Kerner, Ross A.; Grede, Alex J.; Rand, Barry P.; Giebink, Noel C.

2017-12-01

Hybrid organic-inorganic perovskites have emerged as promising gain media for tunable, solution-processed semiconductor lasers. However, continuous-wave operation has not been achieved so far1-3. Here, we demonstrate that optically pumped continuous-wave lasing can be sustained above threshold excitation intensities of 17 kW cm-2 for over an hour in methylammonium lead iodide (MAPbI3) distributed feedback lasers that are maintained below the MAPbI3 tetragonal-to-orthorhombic phase transition temperature of T ≈ 160 K. In contrast with the lasing death phenomenon that occurs for pure tetragonal-phase MAPbI3 at T > 160 K (ref. 4), we find that continuous-wave gain becomes possible at T ≈ 100 K from tetragonal-phase inclusions that are photogenerated by the pump within the normally existing, larger-bandgap orthorhombic host matrix. In this mixed-phase system, the tetragonal inclusions function as carrier recombination sinks that reduce the transparency threshold, in loose analogy to inorganic semiconductor quantum wells, and may serve as a model for engineering improved perovskite gain media.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Deri, Robert J.

1995-01-01

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, S.P.; Patterson, F.G.; Deri, R.J.

1995-07-25

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier. 11 figs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baek, Hyeonjun; Hyun, Jerome K.; Chung, Kunook

Lasing from long semiconductor nanorods is dictated by Fabry-Perot (FP) resonances whereas that from large-diameter microrods is determined by whispering gallery modes (WGMs). Lengths and diameters intermediate between the two systems represent an important size regime for photonics and electronics, but have not been studied in detail. Here, we report on the detection of FP and WGM lasing emissions from a single GaN microrod, and demonstrate the ability to switch between the two lasing mechanisms by translating the excitation beam along the microrod. The competition between FP and WGM-type lasing was studied by finite-difference time-domain simulation and statistical analysis bymore » measuring microrods of various diameters. Finally, control over the relative lasing intensities originating from either FPs or WGMs was demonstrated by tuning the polarization of the emission.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slipchenko, S. O., E-mail: serghpl@mail.ioffe.ru; Podoskin, A. A.; Vinokurov, D. A.

Radiative characteristics of semiconductor stripe-contact lasers operating under quenching conditions of Fabry-Perot-mode lasing are studied. It is found that reversible turning off of Fabry-Perot-mode lasing is caused by switching to closed-mode lasing. Radiative characteristics of the closed mode are controlled by the mode structure with the close-to-zero loss for radiation output, which covers the entire crystal. The main threshold conditions of closed-mode lasing are a decrease in interband absorption in the passive region and an increase in the modal gain of the closed-mode lasing line. It is shown that a decrease in interband absorption in the passive region can bemore » provided by both spontaneous emission from the injection region and lasing-mode photons. An increase in the modal gain of the closed-mode lasing line is provided by shifting the energy minima of the conduction band and maxima of the valence band of the injection region with respect to the energy bands of the passive region.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podoskin, A. A., E-mail: podoskin@mail.ioffe.ru; Shashkin, I. S.; Slipchenko, S. O.

A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power semiconductor lasers is proposed. Based on rate equations, the conditions of lasing switching between Fabry-Perot modes for ground and excited lasing levels and the closed mode are considered in the case of increasing internal optical loss under conditions of high current pump levels. The optical-cell operation conditions in the mode of a high-power laser radiation switch (reversible mode-structure switching) and in the mode of a memory cell with bistable irreversible lasing switching betweenmore » mode structures with various Q-factors are considered.« less

Laser systems configured to output a spectrally-consolidated laser beam and related methods

DOEpatents

Koplow, Jeffrey P [San Ramon, CA

2012-01-10

A laser apparatus includes a plurality of pumps each of which is configured to emit a corresponding pump laser beam having a unique peak wavelength. The laser apparatus includes a spectral beam combiner configured to combine the corresponding pump laser beams into a substantially spatially-coherent pump laser beam having a pump spectrum that includes the unique peak wavelengths, and first and second selectively reflective elements spaced from each other to define a lasing cavity including a lasing medium therein. The lasing medium generates a plurality of gain spectra responsive to absorbing the pump laser beam. Each gain spectrum corresponds to a respective one of the unique peak wavelengths of the substantially spatially-coherent pump laser beam and partially overlaps with all other ones of the gain spectra. The reflective elements are configured to promote emission of a laser beam from the lasing medium with a peak wavelength common to each gain spectrum.

Mie resonances to tailor random lasers

NASA Astrophysics Data System (ADS)

García, P. D.; Ibisate, M.; Sapienza, R.; Wiersma, D. S.; López, C.

2009-07-01

In this paper, we present an optical characterization of photonic glass-based random lasers. We show how the resonant behavior of diffuse light transport through such systems can tailor the lasing emission when a gain medium is added to the glass. A DNA-based organic dye is used as gain medium. The resonances in the transport mean-free path influence the lasing wavelength of the random laser. The laser wavelength is therefore controlled by the sphere diameter. Furthermore, the existence of Mie resonances reduces the necessary pump energy to reach the lasing threshold.

Single Mode ZnO Whispering-Gallery Submicron Cavity and Graphene Improved Lasing Performance.

PubMed

Li, Jitao; Lin, Yi; Lu, Junfeng; Xu, Chunxiang; Wang, Yueyue; Shi, Zengliang; Dai, Jun

2015-07-28

Single-mode ultraviolet (UV) laser of ZnO is still in challenge so far, although it has been paid great attention along the past decades. In this work, single-mode lasing resonance was realized in a submicron-sized ZnO rod based on serially varying the dimension of the whispering-gallery mode (WGM) cavities. The lasing performance, such as the lasing quality factor (Q) and the lasing intensity, was remarkably improved by facilely covering monolayer graphene on the ZnO submicron-rod. The mode structure evolution from multimodes to single-mode was investigated systematically based on the total internal-wall reflection of the ZnO microcavities. Graphene-induced optical field confinement and lasing emission enhancement were revealed, indicating an energy coupling between graphene SP and ZnO exciton emission. This result demonstrated the response of graphene in the UV wavelength region and extended its potential applications besides many previous reports on the multifunctional graphene/semiconductor hybrid materials and devices in advanced electronics and optoelectronics areas.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slipchenko, S. O., E-mail: serghpl@mail.ioffe.ru; Podoskin, A. A.; Pikhtin, N. A.

Threshold conditions for generation of a closed mode in the crystal of the Fabry-Perot semiconductor laser with a quantum-well active region are analyzed. It is found that main parameters affecting the closed mode lasing threshold for the chosen laser heterostructure are as follows: the optical loss in the passive region, the optical confinement factor of the closed mode in the gain region, and material gain detuning. The relations defining the threshold conditions for closed mode lasing in terms of optical and geometrical characteristics of the semiconductor laser are derived. It is shown that the threshold conditions can be satisfied atmore » a lower material gain in comparison with the Fabry-Perot cavity mode due to zero output loss for the closed mode.« less

Diode-pumped laser with improved pumping system

DOEpatents

Chang, Jim J.

2004-03-09

A laser wherein pump radiation from laser diodes is delivered to a pump chamber and into the lasing medium by quasi-three-dimensional compound parabolic concentrator light channels. The light channels have reflective side walls with a curved surface and reflective end walls with a curved surface. A flow tube between the lasing medium and the light channel has a roughened surface.

Solid state laser

NASA Technical Reports Server (NTRS)

Rines, Glen A. (Inventor); Moulton, Peter F. (Inventor); Harrison, James (Inventor)

1993-01-01

A wavelength-tunable, injection-seeded, dispersion-compensated, dispersively-pumped solid state laser includes a lasing medium; a highly reflective mirror; an output coupler; at least one isosceles Brewster prism oriented to the minimum deviation angle between the medium and the mirror for directing light of different wavelengths along different paths; means for varying the angle of the highly reflective mirror relative to the light from at least one Brewster angle for selecting a predetermined laser operating wavelength; a dispersion compensation apparatus associated with the lasing medium; a laser injection seeding port disposed between the dispersion compensation apparatus and one of the mirror and coupler and including a reflective surface at an acute non-Brewster angle to the laser beam for introducing a seed input; a dispersion compensation apparatus associated with the laser medium including opposite chirality optical elements; the lasing medium including a pump surface disposed at an acute angle to the laser beam to define a discrete path for the pumping laser beam separate from the pumped laser beam.

Optically pumped lasing and electroluminescence of formamidinium perovskite semiconductors prepared by the cast-capping method

NASA Astrophysics Data System (ADS)

Sasaki, Fumio; Nguyen, Van-Cao; Yanagi, Hisao

2018-03-01

Optically pumped lasing and electroluminescence (EL) have been observed in solution-processed perovskite semiconducting materials of formamidinium lead bromide, CH(NH2)2PbBr3. Microcavities with flat surfaces and sharp edges have been easily obtained by the simple solution process called the “cast-capping method”. The crystals show clear multimode lasing of Fabry-Pérot cavities. The mode intervals are well explained by the optical constants with large dispersions of the materials. We have also fabricated EL devices and obtained clear EL in a single layer of the materials, but the EL intensity has been quenched rapidly.

Continuous-wave ultraviolet generation at 320 nm by intracavity frequency doubling of red-emitting Praseodymium lasers

NASA Astrophysics Data System (ADS)

Richter, A.; Pavel, N.; Heumann, E.; Huber, G.; Parisi, D.; Toncelli, A.; Tonelli, M.; Diening, A.; Seelert, W.

2006-04-01

We describe a new approach for the generation of coherent ultraviolet radiation. Continuous-wave ultraviolet light at 320 nm has been obtained by intracavity frequency doubling of red-emitting Praseodymium lasers. Lasing at the 640-nm fundamental wavelength in Pr:LiYF4 and Pr:BaY2F8 was realized by employing an optically pumped semiconductor laser at 480 nm as pump source.Using LiB3O5 as nonlinear medium, ~19 mW of ultraviolet radiation with ~9% optical efficiency with respect to absorbed power was reached for both laser crystals; the visible-to-ultraviolet conversion efficiency was 26% and 35% for Pr:LiYF4 and Pr:BaY2F8, respectively.

Electron beam method and apparatus for obtaining uniform discharges in electrically pumped gas lasers

DOEpatents

Fenstermacher, Charles A.; Boyer, Keith

1986-01-01

A method and apparatus for obtaining uniform, high-energy, large-volume electrical discharges in the lasing medium of a gas laser whereby a high-energy electron beam is used as an external ionization source to ionize substantially the entire volume of the lasing medium which is then readily pumped by means of an applied potential less than the breakdown voltage of the medium. The method and apparatus are particularly useful in CO.sub.2 laser systems.

A Photonic Crystal Laser from Solution Based Organo-Lead Iodide Perovskite Thin Films.

PubMed

Chen, Songtao; Roh, Kwangdong; Lee, Joonhee; Chong, Wee Kiang; Lu, Yao; Mathews, Nripan; Sum, Tze Chien; Nurmikko, Arto

2016-04-26

Perovskite semiconductors are actively investigated for high performance solar cells. Their large optical absorption coefficient and facile solution-based, low-temperature synthesis of thin films make perovskites also a candidate for light-emitting devices across the visible and near-infrared. Specific to their potential as optical gain medium for lasers, early work has demonstrated amplified spontaneous emission and lasing at attractively low thresholds of photoexcitation. Here, we take an important step toward practically usable perovskite lasers where a solution-processed thin film is embedded within a two-dimensional photonic crystal resonator. We demonstrate high degree of temporally and spatially coherent lasing whereby well-defined directional emission is achieved near 788 nm wavelength at optical pumping energy density threshold of 68.5 ± 3.0 μJ/cm(2). The measured power conversion efficiency and differential quantum efficiency of the perovskite photonic crystal laser are 13.8 ± 0.8% and 35.8 ± 5.4%, respectively. Importantly, our approach enables scalability of the thin film lasers to a two-dimensional multielement pixelated array of microlasers which we demonstrate as a proof-of-concept for possible projection display applications.

Remembering the laser diode

NASA Astrophysics Data System (ADS)

2012-12-01

Fifty years ago, researchers at a handful of laboratories around the world were reporting lasing from the first semiconductor lasers. Our IT infrastructure today relies on their diligence and success.

Development of Room Temperature Excitonic Lasing From ZnO and MgZnO Thin Film Based Metal-Semiconductor-Metal Devices

NASA Astrophysics Data System (ADS)

Suja, Mohammad Zahir Uddin

Room temperature excitonic lasing is demonstrated and developed by utilizing metal-semiconductor-metal devices based on ZnO and MgZnO materials. At first, Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films and the best conductivity is achieved with a high hole concentration of 1.54x1018 cm-3, a low resistivity of 0.6 O cm and a moderate mobility of 6.65 cm2 V -1 s-1 at room temperature. Metal oxide semiconductor (MOS) capacitor devices have been fabricated on the Cu-doped ZnO films and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as XRD, XPS, Raman and absorption are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. To overcome the stability issue of p-type ZnO film, alternate devices other than p-n junction has been developed. Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing. Our results suggest that plasmon-enhanced ZnO MSM random lasers can become a competitive candidate of efficient ultraviolet light sources. Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this thesis, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29 33 A/cm2 are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.

Mode selection in square resonator microlasers for widely tunable single mode lasing.

PubMed

Tang, Ming-Ying; Sui, Shao-Shuai; Yang, Yue-De; Xiao, Jin-Long; Du, Yun; Huang, Yong-Zhen

2015-10-19

Mode selection in square resonator semiconductor microlasers is demonstrated by adjusting the width of the output waveguide coupled to the midpoint of one side. The simulation and experimental results reveal that widely tunable single mode lasing can be realized in square resonator microlasers. Through adjusting the width of the output waveguide, the mode interval of the high-Q modes can reach four times of the longitudinal mode interval. Therefore, mode hopping can be efficiently avoided and the lasing wavelength can be tuned continuously by tuning the injection current. For a 17.8-μm-side-length square microlaser with a 1.4-μm-width output waveguide, mode-hopping-free single-mode operation is achieved with a continuous tuning range of 9.2 nm. As a result, the control of the lasing mode is realized for the square microlasers.

Diode-Pumped Organo-Lead Halide Perovskite Lasing in a Metal-Clad Distributed Feedback Resonator.

PubMed

Jia, Yufei; Kerner, Ross A; Grede, Alex J; Brigeman, Alyssa N; Rand, Barry P; Giebink, Noel C

2016-07-13

Organic-inorganic lead halide perovskite semiconductors have recently reignited the prospect of a tunable, solution-processed diode laser, which has the potential to impact a wide range of optoelectronic applications. Here, we demonstrate a metal-clad, second-order distributed feedback methylammonium lead iodide perovskite laser that marks a significant step toward this goal. Optically pumping this device with an InGaN diode laser at low temperature, we achieve lasing above a threshold pump intensity of 5 kW/cm(2) for durations up to ∼25 ns at repetition rates exceeding 2 MHz. We show that the lasing duration is not limited by thermal runaway and propose instead that lasing ceases under continuous pumping due to a photoinduced structural change in the perovskite that reduces the gain on a submicrosecond time scale. Our results indicate that the architecture demonstrated here could provide the foundation for electrically pumped lasing with a threshold current density Jth < 5 kA/cm(2) under sub-20 ns pulsed drive.

Surface plasmon polariton laser based on a metallic trench Fabry-Perot resonator

PubMed Central

Zhu, Wenqi; Xu, Ting; Wang, Haozhu; Zhang, Cheng; Deotare, Parag B.; Agrawal, Amit; Lezec, Henri J.

2017-01-01

Recent years have witnessed a growing interest in the development of small-footprint lasers for potential applications in small-volume sensing and on-chip optical communications. Surface plasmons—electromagnetic modes evanescently confined to metal-dielectric interfaces—offer an effective route to achieving lasing at nanometer-scale dimensions when resonantly amplified in contact with a gain medium. We achieve narrow-linewidth visible-frequency lasing at room temperature by leveraging surface plasmons propagating in an open Fabry-Perot cavity formed by a flat metal surface coated with a subwavelength-thick layer of optically pumped gain medium and orthogonally bound by a pair of flat metal sidewalls. We show how the lasing threshold and linewidth can be lowered by incorporating a low-profile tapered grating on the cavity floor to couple the excitation beam into a pump surface plasmon polariton providing a strong modal overlap with the gain medium. Low-perturbation transmission-configuration sampling of the lasing plasmon mode is achieved via an evanescently coupled recessed nanoslit, opening the way to high–figure of merit refractive index sensing of analytes interacting with the open metallic trench. PMID:28989962

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

The excitonic photoluminescence mechanism and lasing action in band-gap-tunable CdS(1-x)Se(x) nanostructures.

PubMed

Dai, Jun; Zhou, Pengxia; Lu, Junfeng; Zheng, Hongge; Guo, Jiyuan; Wang, Fang; Gu, Ning; Xu, Chunxiang

2016-01-14

Bandgap tunable semiconductor materials have wide application in integrated-optoelectronic and communication devices. The CdS1-xSex ternary semiconductor materials covering green-red bands have been reported previously, but their basic band-gap and optical properties crucial to the performance of the CdS1-xSex-based optoelectronic devices have not been deeply understood. In this paper, we theoretically simulated and discussed the feasibility of bandgap-tunable CdS1-xSex nanomaterials for designing wavelength tunable microlasers. Then we fabricated the CdS1-xSex nanobelts with their band gap ranging from 2.4 to 1.74 eV by adjusting the composition ratio x in the vapor-phase-transport growth process. The temperature-dependent photoluminescence and exciton-related optical constants of the CdS1-xSex nanobelts were carefully demonstrated. Finally, the wavelength-tunable Fabry-Perot lasing in CdS1-xSex nanobelts was obtained, and the Fabry-Perot lasing mechanism was numerically simulated by the FDTD method. The systematic results on the mechanism of the tunable band gap, exciton properties and lasing of the CdS1-xSex nanostructure help us deeply understand the intrinsic optical properties of this material, and will build a strong foundation for future application of green-red wavelength-tunable CdS1-xSex microlasers.

Gain Coupling of Class A Semiconductor Lasers (Postprint)

DTIC Science & Technology

2010-09-01

Circuits (Wiley, 1995). 15. SimuLase Version 1.4.0.0 by Nonlinear Control Strategies, Inc. (2009). 16. A. Siegman , Lasers (University Science, 1986). 3062 OPTICS LETTERS / Vol. 35, No. 18 / September 15, 2010 3 ...AFRL-RY-WP-TP-2010-1250 GAIN COUPLING OF CLASS A SEMICONDUCTOR LASERS (POSTPRINT) Chris Hessenius, Mahmoud Fallahi, and Jerome Moloney...June 2010 4. TITLE AND SUBTITLE GAIN COUPLING OF CLASS A SEMICONDUCTOR LASERS (POSTPRINT) 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c

Plasma Heating and Ultrafast Semiconductor Laser Modulation Through a Terahertz Heating Field

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Ning, C. Z.

2000-01-01

Electron-hole plasma heating and ultrafast modulation in a semiconductor laser under a terahertz electrical field are investigated using a set of hydrodynamic equations derived from the semiconductor Bloch equations. The self-consistent treatment of lasing and heating processes leads to the prediction of a strong saturation and degradation of modulation depth even at moderate terahertz field intensity. This saturation places a severe limit to bandwidth achievable with such scheme in ultrafast modulation. Strategies for increasing modulation depth are discussed.

Pump spot size dependent lasing threshold in organic semiconductor DFB lasers fabricated via nanograting transfer.

PubMed

Liu, Xin; Klinkhammer, Sönke; Wang, Ziyao; Wienhold, Tobias; Vannahme, Christoph; Jakobs, Peter-Jürgen; Bacher, Andreas; Muslija, Alban; Mappes, Timo; Lemmer, Uli

2013-11-18

Optically excited organic semiconductor distributed feedback (DFB) lasers enable efficient lasing in the visible spectrum. Here, we report on the rapid and parallel fabrication of DFB lasers via transferring a nanograting structure from a flexible mold onto an unstructured film of the organic gain material. This geometrically well-defined structure allows for a systematic investigation of the laser threshold behavior. The laser thresholds for these devices show a strong dependence on the pump spot diameter. This experimental finding is in good qualitative agreement with calculations based on coupled-wave theory. With further investigations on various DFB laser geometries prepared by different routes and based on different organic gain materials, we found that these findings are quite general. This is important for the comparison of threshold values of various devices characterized under different excitation areas.

Solid-state-based analog of optomechanics

DOE PAGES

Naumann, Nicolas L.; Droenner, Leon; Carmele, Alexander; ...

2016-09-01

In this study, we investigate a semiconductor quantum dot as a microscopic analog of a basic optomechanical setup. We show that optomechanical features can be reproduced by the solid-state platform, arising from parallels of the underlying interaction processes, which in the optomechanical case is the radiation pressure coupling and in the semiconductor case the electron–phonon coupling. We discuss bistabilities, lasing, and phonon damping, and recover the same qualitative behaviors for the semiconductor and the optomechanical cases expected for low driving strengths. However, in contrast to the optomechanical case, distinct signatures of higher order processes arise in the semiconductor model.

Tunable liquid-crystal microshell-laser based on whispering-gallery modes and photonic band-gap mode lasing.

PubMed

Lu, Yuelan; Yang, Yue; Wang, Yan; Wang, Lei; Ma, Ji; Zhang, Lingli; Sun, Weimin; Liu, Yongjun

2018-02-05

The lasing behaviors of dye-doped cholesteric liquid crystal (DDCLC) microshells fabricated with silica-glass-microsphere coated DDCLCs were examined. Lasing characteristics were studied in a carrier medium with different refractive indices. The lasing in spherical cholesteric liquid crystals (CLCs) was attributed to two mechanisms, photonic band-gap (PBG) lasing and whispering-gallery modes (WGMs), which can independently exist by varying the chiral agent concentration and pumping energy. It was also found that DDCLC microshells can function as highly sensitive thermal sensors, with a temperature sensitivity of 0.982 nm °C -1 in PBG modes and 0.156 nm °C -1 in WGMs.

Wavelength tunable single nanowire lasers based on surface plasmon polariton enhanced Burstein-Moss effect.

PubMed

Liu, Xinfeng; Zhang, Qing; Yip, Jing Ngei; Xiong, Qihua; Sum, Tze Chien

2013-01-01

Wavelength tunable semiconductor nanowire (NW) lasers are promising for multifunctional applications ranging from optical communication to spectroscopy analysis. Here, we present a demonstration of utilizing the surface plasmon polariton (SPP) enhanced Burstein-Moss (BM) effect to tune the lasing wavelength of a single semiconductor NW. The photonic lasing mode of the CdS NW (with length ~10 μm and diameter ~220 nm) significantly blue shifts from 504 to 483 nm at room temperature when the NW is in close proximity to the Au film. Systematic steady state power dependent photoluminescence (PL) and time-resolved PL studies validate that the BM effect in the hybrid CdS NW devices is greatly enhanced as a consequence of the strong coupling between the SPP and CdS excitons. With decreasing dielectric layer thickness h from 100 to 5 nm, the enhancement of the BM effect becomes stronger, leading to a larger blue shift of the lasing wavelength. Measurements of enhanced exciton emission intensities and recombination rates in the presence of Au film further support the strong interaction between SPP and excitons, which is consistent with the simulation results.

Theory of lasing action in plasmonic crystals

NASA Astrophysics Data System (ADS)

Cuerda, J.; Rüting, F.; García-Vidal, F. J.; Bravo-Abad, J.

2015-01-01

We theoretically investigate lasing action in plasmonic crystals incorporating optically pumped four-level gain media. By using detailed simulations based on a time-domain generalization of the finite-element method, we show that the excitation of dark plasmonic resonances (via the gain medium) enables accessing the optimal lasing characteristics of the considered class of systems. Moreover, our study reveals that, in general, arrays of nanowires feature lower lasing thresholds and larger slope efficiencies than those corresponding to periodic arrays of subwavelength apertures. These findings are of relevance for further engineering of active devices based on plasmonic crystals.

Spectral characteristics of multimode semiconductor lasers with a high-order surface diffraction grating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zolotarev, V V; Leshko, A Yu; Pikhtin, N A

2014-10-31

We have studied the spectral characteristics of multimode semiconductor lasers with high-order surface diffraction gratings based on asymmetric separate-confinement heterostructures grown by metalorganic vapour phase epitaxy (λ = 1070 nm). Experimental data demonstrate that, in the temperature range ±50 °C, the laser emission spectrum is ∼5 Å in width and contains a fine structure of longitudinal and transverse modes. A high-order (m = 15) surface diffraction grating is shown to ensure a temperature stability of the lasing spectrum dλ/dT = 0.9 Å K{sup -1} in this temperature range. From analysis of the fine structure of the lasing spectrum, we havemore » evaluated the mode spacing and, thus, experimentally determined the effective length of the Bragg diffraction grating, which was ∼400 μm in our samples. (lasers)« less

The analytical approach to the multi-state lasing phenomenon in undoped and p-doped InAs/InGaAs semiconductor quantum dot lasers

NASA Astrophysics Data System (ADS)

Korenev, Vladimir V.; Savelyev, Artem V.; Zhukov, Alexey E.; Omelchenko, Alexander V.; Maximov, Mikhail V.

2014-05-01

We introduce an analytical approach to the multi-state lasing phenomenon in p-doped and undoped InAs/InGaAs quantum dot lasers which were studied both theoretically and experimentally. It is shown that the asymmetry in charge carrier distribution in quantum dots as well as hole-to-electron capture rate ratio jointly determine laser's behavior in such a regime. If the ratio is lower than a certain critical value, the complete quenching of ground-state lasing takes place at sufficiently high injection currents; at higher values of the ratio, our model predicts saturation of the ground-state power. It was experimentally shown that the modulation p-doping of laser's active region results in increase of output power emitted via the ground-state optical transitions of quantum dots and in enhancement of the injection currents range in which multi-state lasing takes place. The maximum temperature at which multi-state lasing exists was increased by about 50°C in the p-doped samples. These effects are qualitatively explained in the terms of the proposed model.

Continuous-wave organic dye lasers and methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shapira, Ofer; Chua, Song-Liang; Zhen, Bo

2014-09-16

An organic dye laser produces a continuous-wave (cw) output without any moving parts (e.g., without using flowing dye streams or spinning discs of solid-state dye media to prevent photobleaching) and with a pump beam that is stationary with respect to the organic dye medium. The laser's resonant cavity, organic dye medium, and pump beam are configured to excite a lasing transition over a time scale longer than the associated decay lifetimes in the organic dye medium without photobleaching the organic dye medium. Because the organic dye medium does not photobleach when operating in this manner, it may be pumped continuouslymore » so as to emit a cw output beam. In some examples, operation in this manner lowers the lasing threshold (e.g., to only a few Watts per square centimeter), thereby facilitating electrical pumping for cw operation.« less

Thermal effects in Cs DPAL and alkali cell window damage

NASA Astrophysics Data System (ADS)

Zhdanov, B. V.; Rotondaro, M. D.; Shaffer, M. K.; Knize, R. J.

2016-10-01

Experiments on power scaling of Diode Pumped Alkali Lasers (DPALs) revealed some limiting parasitic effects such as alkali cell windows and gain medium contamination and damage, output power degradation in time and others causing lasing efficiency decrease or even stop lasing1 . These problems can be connected with thermal effects, ionization, chemical interactions between the gain medium components and alkali cells materials. Study of all these and, possibly, other limiting effects and ways to mitigate them is very important for high power DPAL development. In this talk we present results of our experiments on temperature measurements in the gain medium of operating Cs DPAL at different pump power levels in the range from lasing threshold to the levels causing damage of the alkali cell windows. For precise contactless in situ temperature measurements, we used an interferometric technique, developed in our lab2 . In these experiments we demonstrated that damage of the lasing alkali cell starts in the bulk with thermal breakdown of the hydrocarbon buffer gas. The degradation processes start at definite critical temperatures of the gain medium, different for each mixture of buffer gas. At this critical temperature, the hydrocarbon and the excited alkali metal begin to react producing the characteristic black soot and, possibly, some other chemical compounds, which both harm the laser performance and significantly increase the harmful heat deposition within the laser medium. This soot, being highly absorptive, is catastrophically heated to very high temperatures that visually observed as bulk burning. This process quickly spreads to the cell windows and causes their damage. As a result, the whole cell is also contaminated with products of chemical reactions.

Effects of spatial nonuniformity on laser dynamics.

PubMed

Deych, L I

2005-07-22

Semiclassical equations of lasing dynamics are rederived for a lasing medium in a cavity with a spatially nonuniform dielectric constant. The nonuniformity causes a radiative coupling between modes of the empty cavity, which results in a renormalization of self- and cross-saturation coefficients. Possible manifestations of these effects in random lasers are discussed.

Organic Solid-State Tri-Wavelength Lasing from Holographic Polymer-Dispersed Liquid Crystal and a Distributed Feedback Laser with a Doped Laser Dye and a Semiconducting Polymer Film.

PubMed

Liu, Minghuan; Liu, Yonggang; Peng, Zenghui; Wang, Shaoxin; Wang, Qidong; Mu, Quanquan; Cao, Zhaoliang; Xuan, Li

2017-05-07

Organic solid-state tri-wavelength lasing was demonstrated from dye-doped holographic polymer-dispersed liquid crystal (HPDLC) distributed feedback (DFB) laser with semiconducting polymer poly[-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) and laser dye [4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran] (DCM) by a one-step holography technique, which centered at 605.5 nm, 611.9 nm, and 671.1 nm. The temperature-dependence tuning range for the tri-wavelength dye-doped HPDLC DFB laser was as high as 8 nm. The lasing emission from the 9th order HPDLC DFB laser with MEH-PPV as active medium was also investigated, which showed excellent s-polarization characterization. The diffraction order is 9th and 8th for the dual-wavelength lasing with DCM as the active medium. The results of this work provide a method for constructing the compact and cost-effective all solid-state smart laser systems, which may find application in scientific and applied research where multi-wavelength radiation is required.

LASERS, ACTIVE MEDIA: The aqueous-polyelectrolyte dye solution as an active laser medium

NASA Astrophysics Data System (ADS)

Akimov, A. I.; Saletskii, A. M.

2000-11-01

The spectral, luminescent, and lasing properties of aqueous solutions of a cationic dye rhodamine 6G with additions of anion polyelectrolytes — polyacrylic and polymethacrylic acids — are studied. It is found that the energy and spectral properties of lasing of these solutions depend on the ratio of concentrations of polyelectrolyte and molecules. It is also found that the lasing parameters of aqueous-polyelectrolyte dye solutions can be controlled by changing the structure of the molecular system. The variation in the structure of aqueous-polyelectrolyte dye solutions of rhodamine 6G resulted in an almost five-fold increase in the lasing efficiency compared to that in aqueous dye solutions.

Ultraviolet random lasing action from highly disordered n-AlN/p-GaN heterojunction.

PubMed

Yang, H Y; Yu, S F; Wong, J I; Cen, Z H; Liang, H K; Chen, T P

2011-05-01

Room-temperature random lasing is achieved from an n-AlN/p-GaN heterojunction. The highly disordered n-AlN layer, which was deposited on p-GaN:Mg layer via radio frequency magnetron sputtering, acts as a scattering medium to sustain coherent optical feedback. The p-GaN:Mg layer grown on sapphire provides optical amplification to the scattered light propagating along the heterojunction. Hence, lasing peaks of line width less than 0.4 nm are emerged from the emission spectra at round 370 nm for the heterojunction under forward bias larger than 5.1 V. Lasing characteristics of the heterojunction are in agreement with the behavior of random lasers.

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

NASA Astrophysics Data System (ADS)

Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

2016-10-01

We report close to circularly polarized lasing at ℏ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.

Bibliography of Soviet Laser Developments, Number 66, July-August 1983.

DTIC Science & Technology

1984-09-01

7 5. Glass : Nd............................................8 6. Glass : Er............................................9 7. Glass ...upper lasing level of neodymium in y-La2S 3 semiconductor crystals and _a2S_ 2Ga20 3 glass . KE, no. 8, 1983, 1560-1564. 7. Kaminskiy, A.A., N.R. Agamalyan...injection semiconductor lasers. FTP, no. 7, 1983, 1353-1355. 5. Glass : Nd 44. Gvatua, Sh.Sh., Z.V. Katselashvili, V.N. Polukhin, S.N. Popov, T.V. Prangishvili

Magneto-Transpots in Interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs

DTIC Science & Technology

2011-03-02

Woolard, "Far- infrared and Terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructure," Applied Physics Letter, vol. 98...REPORT FINAL REPORT: Magneto-Transpots in interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs 14. ABSTRACT 16...diodes (RTDs). This DB-BG-RTD device will utilizes two distinct innovations. First, ultra-fast heavy-hole (HH) interband tunneling is leveraged to

Laser interferometric studies of thermal effects of diode-pumped solid state lasing medium

NASA Astrophysics Data System (ADS)

Peng, Xiaoyuan; Asundi, Anand K.; Xu, Lei; Chen, Yihong; Xiong, Zhengjun; Lim, Gnian Cher

2000-04-01

Thermal effects dramatically influence the laser performance of diode-pumped solid state lasers (DPSSL). There are three factors accounting for thermal effects in diode-pumped laser medium: the change of the refractive index due to temperature gradient, the change of the refractive index due to thermal stress, and the change of the physical length due to thermal expansion (end effect), in which the first two effects can be called as thermal parts. A laser interferometer is proposed to measure both the bulk and physical messages of solid-state lasing medium. There are two advantages of the laser interferometry to determine the thermal lensing effect. One is that it allows separating the average thermal lens into thermal parts and end effect. Another is that the laser interferometry provides a non- invasive, full field, high-resolution means of diagnosing such effects by measuring the optical path difference induced by thermal loading in a lasing crystal reliable without disturbing the normal working conditions of the DPSS laser. Relevant measurement results are presented in this paper.

Towards zero-threshold optical gain using charged semiconductor quantum dots

DOE PAGES

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon; ...

2017-10-16

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain thresholdmore » due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.« less

Towards zero-threshold optical gain using charged semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain thresholdmore » due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.« less

Model of an Injection Semiconductor Quantum-Dot Laser

NASA Astrophysics Data System (ADS)

Koryukin, I. V.

2018-05-01

We propose an asymmetric electron-hole model of an injection semiconductor quantum-dot laser, which correctly allows for relaxation at transitions between the electron and hole levels. Steady-state solutions of the proposed model, conditions for the simultaneous operation at transitions between the ground and first excited state levels, and relaxation oscillations in the two-wave lasing regime are studied. It is shown that the model can be simplified when the relaxation between hole levels is much faster than the relaxation between electron levels.

Fusion pumped laser

DOEpatents

Pappas, Daniel S.

1989-01-01

Apparatus is provided for generating energy in the form of laser radiation. A tokamak fusion reactor is provided for generating a long, or continuous, pulse of high-energy neutrons. The tokamak design provides a temperature and a magnetic field which is effective to generate a neutron flux of at least 10.sup.15 neutrons/cm.sup.2.s. A conversion medium receives neutrons from the tokamak and converts the high-energy neutrons to an energy source with an intensity and an energy effective to excite a preselected lasing medium. The energy source typically comprises fission fragments, alpha particles, and radiation from a fission event. A lasing medium is provided which is responsive to the energy source to generate a population inversion which is effective to support laser oscillations for generating output radiation.

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

Design of bent waveguide semiconductor lasers using nonlinear equivalent chirp

NASA Astrophysics Data System (ADS)

Li, Lianyan; Shi, Yuechun; Zhang, Yunshan; Chen, Xiangfei

2018-01-01

Reconstruction equivalent chirp (REC) technique is widely used in the design and fabrication of semiconductor laser arrays and tunable lasers with low cost and high wavelength accuracy. Bent waveguide is a promising method to suppress the zeroth order resonance, which is an intrinsic problem in REC technique. However, it may introduce basic grating chirp and deteriorate the single longitudinal mode (SLM) property of the laser. A nonlinear equivalent chirp pattern is proposed in this paper to compensate the grating chirp and improve the SLM property. It will benefit the realization of low-cost Distributed feedback (DFB) semiconductor laser arrays with accurate lasing wavelength.

Flexible random lasers with tunable lasing emissions.

PubMed

Lee, Ya-Ju; Chou, Chun-Yang; Yang, Zu-Po; Nguyen, Thi Bich Hanh; Yao, Yung-Chi; Yeh, Ting-Wei; Tsai, Meng-Tsan; Kuo, Hao-Chun

2018-04-19

In this study, we experimentally demonstrated a flexible random laser fabricated on a polyethylene terephthalate (PET) substrate with a high degree of tunability in lasing emissions. Random lasing oscillation arises mainly from the resonance coupling between the emitted photons of gain medium (Rhodamine 6G, R6G) and the localized surface plasmon (LSP) of silver nanoprisms (Ag NPRs), which increases the effective cross-section for multiple light scattering, thus stimulating the lasing emissions. More importantly, it was found that the random lasing wavelength is blue-shifted monolithically with the increase in bending strains exerted on the PET substrate, and a maximum shift of ∼15 nm was achieved in the lasing wavelength, when a 50% bending strain was exerted on the PET substrate. Such observation is highly repeatable and reversible, and this validates that we can control the lasing wavelength by simply bending the flexible substrate decorated with the Ag NPRs. The scattering spectrum of the Ag NPRs was obtained using a dark-field microscope to understand the mechanism for the dependence of the wavelength shift on the exerted bending strains. As a result, we believe that the experimental demonstration of tunable lasing emissions based on the revealed structure is expected to open up a new application field of random lasers.

Fusion pumped light source

DOEpatents

Pappas, Daniel S.

1989-01-01

Apparatus is provided for generating energy in the form of light radiation. A fusion reactor is provided for generating a long, or continuous, pulse of high-energy neutrons. The neutron flux is coupled directly with the lasing medium. The lasing medium includes a first component selected from Group O of the periodic table of the elements and having a high inelastic scattering cross section. Gamma radiation from the inelastic scattering reactions interacts with the first component to excite the first component, which decays by photon emission at a first output wavelength. The first output wavelength may be shifted to a second output wavelength using a second liquid component responsive to the first output wavelength. The light outputs may be converted to a coherent laser output by incorporating conventional optics adjacent the laser medium.

Fusion reactor pumped laser

DOEpatents

Jassby, D.L.

1987-09-04

A nuclear pumped laser capable of producing long pulses of very high power laser radiation is provided. A toroidal fusion reactor provides energetic neutrons which are slowed down by a moderator. The moderated neutrons are converted to energetic particles capable of pumping a lasing medium. The lasing medium is housed in an annular cell surrounding the reactor. The cell includes an annular reflecting mirror at the bottom and an annular output window at the top. A neutron reflector is disposed around the cell to reflect escaping neutrons back into the cell. The laser radiation from the annular window is focused onto a beam compactor which generates a single coherent output laser beam. 10 figs.

Fusion reactor pumped laser

DOEpatents

Jassby, Daniel L.

1988-01-01

A nuclear pumped laser capable of producing long pulses of very high power laser radiation is provided. A toroidal fusion reactor provides energetic neutrons which are slowed down by a moderator. The moderated neutrons are converted to energetic particles capable of pumping a lasing medium. The lasing medium is housed in an annular cell surrounding the reactor. The cell includes an annular reflecting mirror at the bottom and an annular output window at the top. A neutron reflector is disposed around the cell to reflect escaping neutrons back into the cell. The laser radiation from the annular window is focused onto a beam compactor which generates a single coherent output laser beam.

Organic Lasers: Recent Developments on Materials, Device Geometries, and Fabrication Techniques.

PubMed

Kuehne, Alexander J C; Gather, Malte C

2016-11-09

Organic dyes have been used as gain medium for lasers since the 1960s, long before the advent of today's organic electronic devices. Organic gain materials are highly attractive for lasing due to their chemical tunability and large stimulated emission cross section. While the traditional dye laser has been largely replaced by solid-state lasers, a number of new and miniaturized organic lasers have emerged that hold great potential for lab-on-chip applications, biointegration, low-cost sensing and related areas, which benefit from the unique properties of organic gain materials. On the fundamental level, these include high exciton binding energy, low refractive index (compared to inorganic semiconductors), and ease of spectral and chemical tuning. On a technological level, mechanical flexibility and compatibility with simple processing techniques such as printing, roll-to-roll, self-assembly, and soft-lithography are most relevant. Here, the authors provide a comprehensive review of the developments in the field over the past decade, discussing recent advances in organic gain materials, which are today often based on solid-state organic semiconductors, as well as optical feedback structures, and device fabrication. Recent efforts toward continuous wave operation and electrical pumping of solid-state organic lasers are reviewed, and new device concepts and emerging applications are summarized.

Widely tunable semiconductor lasers with three interferometric arms.

PubMed

Su, Guan-Lin; Wu, Ming C

2017-09-04

We present a comprehensive study for a new three-branch widely tunable semiconductor laser based on a self-imaging, lossless multi-mode interference (MMI) coupler. We have developed a general theoretical framework that is applicable to all types of interferometric lasers. Our analysis showed that the three-branch laser offers high side-mode suppression ratios (SMSRs) while maintaining a wide tuning range and a low threshold modal gain of the lasing mode. We also present the design rules for tuning over the dense-wavelength division multiplexing grid over the C-band.

Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology.

PubMed

Li, Jingsi; Wang, Huan; Chen, Xiangfei; Yin, Zuowei; Shi, Yuechun; Lu, Yanqing; Dai, Yitang; Zhu, Hongliang

2009-03-30

In this paper we report, to the best of our knowledge, the first experimental realization of distributed feedback (DFB) semiconductor lasers based on reconstruction-equivalent-chirp (REC) technology. Lasers with different lasing wavelengths are achieved simultaneously on one chip, which shows a potential for the REC technology in combination with the photonic integrated circuits (PIC) technology to be a possible method for monolithic integration, in that its fabrication is as powerful as electron beam technology and the cost and time-consuming are almost the same as standard holographic technology.

Colloidal-Quantum-Dot Ring Lasers with Active Color Control.

PubMed

le Feber, Boris; Prins, Ferry; De Leo, Eva; Rabouw, Freddy T; Norris, David J

2018-02-14

To improve the photophysical performance of colloidal quantum dots for laser applications, sophisticated core/shell geometries have been developed. Typically, a wider bandgap semiconductor is added as a shell to enhance the gain from the quantum-dot core. This shell is designed to electronically isolate the core, funnel excitons to it, and reduce nonradiative Auger recombination. However, the shell could also potentially provide a secondary source of gain, leading to further versatility in these materials. Here we develop high-quality quantum-dot ring lasers that not only exhibit lasing from both the core and the shell but also the ability to switch between them. We fabricate ring resonators (with quality factors up to ∼2500) consisting only of CdSe/CdS/ZnS core/shell/shell quantum dots using a simple template-stripping process. We then examine lasing as a function of the optical excitation power and ring radius. In resonators with quality factors >1000, excitons in the CdSe cores lead to red lasing with thresholds at ∼25 μJ/cm 2 . With increasing power, green lasing from the CdS shell emerges (>100 μJ/cm 2 ) and then the red lasing begins to disappear (>250 μJ/cm 2 ). We present a rate-equation model that can explain this color switching as a competition between exciton localization into the core and stimulated emission from excitons in the shell. Moreover, by lowering the quality factor of the cavity we can engineer the device to exhibit only green lasing. The mechanism demonstrated here provides a potential route toward color-switchable quantum-dot lasers.

Cleaved-coupled nanowire lasers

PubMed Central

Gao, Hanwei; Fu, Anthony; Andrews, Sean C.; Yang, Peidong

2013-01-01

The miniaturization of optoelectronic devices is essential for the continued success of photonic technologies. Nanowires have been identified as potential building blocks that mimic conventional photonic components such as interconnects, waveguides, and optical cavities at the nanoscale. Semiconductor nanowires with high optical gain offer promising solutions for lasers with small footprints and low power consumption. Although much effort has been directed toward controlling their size, shape, and composition, most nanowire lasers currently suffer from emitting at multiple frequencies simultaneously, arising from the longitudinal modes native to simple Fabry–Pérot cavities. Cleaved-coupled cavities, two Fabry–Pérot cavities that are axially coupled through an air gap, are a promising architecture to produce single-frequency emission. The miniaturization of this concept, however, imposes a restriction on the dimensions of the intercavity gaps because severe optical losses are incurred when the cross-sectional dimensions of cavities become comparable to the lasing wavelength. Here we theoretically investigate and experimentally demonstrate spectral manipulation of lasing modes by creating cleaved-coupled cavities in gallium nitride (GaN) nanowires. Lasing operation at a single UV wavelength at room temperature was achieved using nanoscale gaps to create the smallest cleaved-coupled cavities to date. Besides the reduced number of lasing modes, the cleaved-coupled nanowires also operate with a lower threshold gain than that of the individual component nanowires. Good agreement was found between the measured lasing spectra and the predicted spectral modes obtained by simulating optical coupling properties. This agreement between theory and experiment presents design principles to rationally control the lasing modes in cleaved-coupled nanowire lasers. PMID:23284173

An integrated parity-time symmetric wavelength-tunable single-mode microring laser

PubMed Central

Liu, Weilin; Li, Ming; Guzzon, Robert S.; Norberg, Erik J.; Parker, John S.; Lu, Mingzhi; Coldren, Larry A.; Yao, Jianping

2017-01-01

Mode control in a laser cavity is critical for a stable single-mode operation of a ring laser. In this study we propose and experimentally demonstrate an electrically pumped parity-time (PT)-symmetric microring laser with precise mode control, to achieve wavelength-tunable single-mode lasing with an improved mode suppression ratio. The proposed PT-symmetric laser is implemented based on a photonic integrated circuit consisting of two mutually coupled active microring resonators. By incorporating multiple semiconductor optical amplifiers in the microring resonators, the PT-symmetry condition can be achieved by a precise manipulation of the interplay between the gain and loss in the two microring resonators, and the incorporation of phase modulators in the microring resonators enables continuous wavelength tuning. Single-mode lasing at 1,554.148 nm with a sidemode suppression ratio exceeding 36 dB is demonstrated and the lasing wavelength is continuously tunable from 1,553.800 to 1,554.020 nm. PMID:28497784

An integrated parity-time symmetric wavelength-tunable single-mode microring laser.

PubMed

Liu, Weilin; Li, Ming; Guzzon, Robert S; Norberg, Erik J; Parker, John S; Lu, Mingzhi; Coldren, Larry A; Yao, Jianping

2017-05-12

Mode control in a laser cavity is critical for a stable single-mode operation of a ring laser. In this study we propose and experimentally demonstrate an electrically pumped parity-time (PT)-symmetric microring laser with precise mode control, to achieve wavelength-tunable single-mode lasing with an improved mode suppression ratio. The proposed PT-symmetric laser is implemented based on a photonic integrated circuit consisting of two mutually coupled active microring resonators. By incorporating multiple semiconductor optical amplifiers in the microring resonators, the PT-symmetry condition can be achieved by a precise manipulation of the interplay between the gain and loss in the two microring resonators, and the incorporation of phase modulators in the microring resonators enables continuous wavelength tuning. Single-mode lasing at 1,554.148 nm with a sidemode suppression ratio exceeding 36 dB is demonstrated and the lasing wavelength is continuously tunable from 1,553.800 to 1,554.020 nm.

Optical spectroscopy of cobalt-doped cadmium telluride

NASA Astrophysics Data System (ADS)

Turner, Eric J.; Evans, Jonathan; Harris, Thomas

2018-02-01

Spectroscopic investigation of Co2+:CdTe was performed to evaluate it's potential as a lasing medium. The sample had a targeted doping concentration of 2% and measurements were performed from 10 - 120K. Cross-sections for Co:CdTe were calculated using Füchtbauer-Ladenburg and reciprocity methods. Calculations suggest the potential for efficient lasing at 3.7μm when pumped by a 3μm laser source on the 4A2 <-> 4T2 transition. The fluorescence lifetime was measured to quantify the temperature dependence of the non-radiative relaxation rate. This work aims to characterize Co:CdTe as a novel gain medium for compact, tunable mid-infrared lasers operating within the atmospheric transmission window.

OPS laser EPI design for different wavelengths

NASA Astrophysics Data System (ADS)

Moloney, J. V.; Hader, J.; Li, H.; Kaneda, Y.; Wang, T. S.; Yarborough, M.; Koch, S. W.; Stolz, W.; Kunert, B.; Bueckers, C.; Chaterjee, S.; Hardesty, G.

2009-02-01

Design of optimized semiconductor optically-pumped semiconductor lasers (OPSLs) depends on many ingredients starting from the quantum wells, barrier and cladding layers all the way through to the resonant-periodic gain (RPG) and high reflectivity Bragg mirror (DBR) making up the OPSL active mirror. Accurate growth of the individual layers making up the RPG region is critical if performance degradation due to cavity misalignment is to be avoided. Optimization of the RPG+DBR structure requires knowledge of the heat generation and heating sinking of the active mirror. Nonlinear Control Strategies SimuLaseTM software, based on rigorous many-body calculations of the semiconductor optical response, allows for quantum well and barrier optimization by correlating low intensity photoluminescence spectra computed for the design, with direct experimentally measured wafer-level edge and surface PL spectra. Consequently, an OPSL device optimization procedure ideally requires a direct iterative interaction between designer and grower. In this article, we discuss the application of the many-body microscopic approach to OPSL devices lasing at 850nm, 1040nm and 2μm. The latter device involves and application of the many-body approach to mid-IR OPSLs based on antimonide materials. Finally we will present results on based on structural modifications of the epitaxial structure and/or novel material combinations that offer the potential to extend OPSL technology to new wavelength ranges.

PT-symmetric laser absorber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Longhi, Stefano

2010-09-15

In a recent work, Y. D. Chong et al. [Phys. Rev. Lett. 105, 053901 (2010)] proposed the idea of a coherent perfect absorber (CPA) as the time-reversed counterpart of a laser, in which a purely incoming radiation pattern is completely absorbed by a lossy medium. The optical medium that realizes CPA is obtained by reversing the gain with absorption, and thus it generally differs from the lasing medium. Here it is shown that a laser with an optical medium that satisfies the parity-time (PT) symmetry condition {epsilon}(-r)={epsilon}*(r) for the dielectric constant behaves simultaneously as a laser oscillator (i.e., it canmore » emit outgoing coherent waves) and as a CPA (i.e., it can fully absorb incoming coherent waves with appropriate amplitudes and phases). Such a device can thus be referred to as a PT-symmetric CPA laser. The general amplification or absorption features of the PT CPA laser below lasing threshold driven by two fields are determined.« less

Integrated semiconductor twin-microdisk laser under mutually optical injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due tomore » strong optical interaction between the two microdisks.« less

Experimental demonstration of a multi-wavelength distributed feedback semiconductor laser array with an equivalent chirped grating profile based on the equivalent chirp technology.

PubMed

Li, Wangzhe; Zhang, Xia; Yao, Jianping

2013-08-26

We report, to the best of our knowledge, the first realization of a multi-wavelength distributed feedback (DFB) semiconductor laser array with an equivalent chirped grating profile based on equivalent chirp technology. All the lasers in the laser array have an identical grating period with an equivalent chirped grating structure, which are realized by nonuniform sampling of the gratings. Different wavelengths are achieved by changing the sampling functions. A multi-wavelength DFB semiconductor laser array is fabricated and the lasing performance is evaluated. The results show that the equivalent chirp technology is an effective solution for monolithic integration of a multi-wavelength laser array with potential for large volume fabrication.

Semiconductor ring lasers coupled by a single waveguide

NASA Astrophysics Data System (ADS)

Coomans, W.; Gelens, L.; Van der Sande, G.; Mezosi, G.; Sorel, M.; Danckaert, J.; Verschaffelt, G.

2012-06-01

We experimentally and theoretically study the characteristics of semiconductor ring lasers bidirectionally coupled by a single bus waveguide. This configuration has, e.g., been suggested for use as an optical memory and as an optical neural network motif. The main results are that the coupling can destabilize the state in which both rings lase in the same direction, and it brings to life a state with equal powers at both outputs. These are both undesirable for optical memory operation. Although the coupling between the rings is bidirectional, the destabilization occurs due to behavior similar to an optically injected laser system.

Wurtzite Spin-Lasers

NASA Astrophysics Data System (ADS)

Xu, Gaofeng; Faria Junior, Paulo E.; Sipahi, Guilherme M.; Zutic, Igor

Lasers in which spin-polarized carriers are injected provide paths to different practical room temperature spintronic devices, not limited to magnetoresistive effects. While theoretical studies of such spin-lasers have focused on zinc-blende semiconductors as their active regions, the first electrically injected carriers at room temperature were recently demonstrated in GaN-based wurtzite semiconductors, recognized also for the key role as highly-efficient light emitting diodes. By focusing on a wurtzite quantum well-based spin-laser, we use accurate electronic structure calculations to develop a microscopic description for its lasing properties. We discuss important differences between wurtzite and zinc-blende spin-lasers.

Graphene surface emitting terahertz laser: Diffusion pumping concept

DOE Office of Scientific and Technical Information (OSTI.GOV)

Davoyan, Arthur R., E-mail: davoyan@seas.upenn.edu; Morozov, Mikhail Yu.; Popov, Vyacheslav V.

2013-12-16

We suggest a concept of a tunable graphene-based terahertz (THz) surface emitting laser with diffusion pumping. We employ significant difference in the electronic energy gap of graphene and a typical wide-gap semiconductor, and demonstrate that carriers generated in the semiconductor can be efficiently captured by graphene resulting in population inversion and corresponding THz lasing from graphene. We develop design principles for such a laser and estimate its performance. We predict up to 50 W/cm{sup 2} terahertz power output for 100 kW/cm{sup 2} pump power at frequency around 10 THz at room temperature.

Transverse mode control in proton-implanted and oxide-confined VCSELs via patterned dielectric anti-phase filters

NASA Astrophysics Data System (ADS)

Kesler, Benjamin; O'Brien, Thomas; Dallesasse, John M.

2017-02-01

A novel method for controlling the transverse lasing modes in both proton implanted and oxide-confined vertical- cavity surface-emitting lasers (VCSELs) with a multi-layer, patterned, dielectric anti-phase (DAP) filter is pre- sented. Using a simple photolithographic liftoff process, dielectric layers are deposited and patterned on individual VCSELs to modify (increase or decrease) the mirror reflectivity across the emission aperture via anti-phase reflections, creating spatially-dependent threshold material gain. The shape of the dielectric pattern can be tailored to overlap with specific transverse VCSEL modes or subsets of transverse modes to either facilitate or inhibit lasing by decreasing or increasing, respectively, the threshold modal gain. A silicon dioxide (SiO2) and titanium dioxide (TiO2) anti-phase filter is used to achieve a single-fundamental-mode, continuous-wave output power greater than 4.0 mW in an oxide-confined VCSEL at a lasing wavelength of 850 nm. A filter consisting of SiO2 and TiO2 is used to facilitate injection-current-insensitive fundamental mode and lower order mode lasing in proton implanted VCSELs at a lasing wavelength of 850 nm. Higher refractive index dielectric materials such as amorphous silicon (a-Si) can be used to increase the effectiveness of the anti-phase filter on proton implanted devices by reducing the threshold modal gain of any spatially overlapping modes. This additive, non-destructive method allows for mode selection at any lasing wavelength and for any VCSEL layer structure without the need for semiconductor etching or epitaxial regrowth. It also offers the capability of designing a filter based upon available optical coating materials.

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yating; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

2016-07-04

Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature T{sub o} of 105 K has been extracted.

Laser utilizing a gaseous lasing medium and method for operating the same

DOEpatents

Zerr, Bruce A.

1986-01-01

The invention relates to an improvement in gas lasers and a method of operating the same. In one aspect, the invention is an improved method for operating a high-power gas laser. The improvement comprises introducing the gas lasing medium tangentially to the laser tube at a pressure establishing a forced vortex in the tube. The vortex defines an axially extending core region characterized by a low pressure and temperature relative to the gas inlet and the exterior of the vortex. An electrical discharge is established in the core region to initiate lasing of the gas. The gas discharge from the tube is passed through a diffuser. As in conventional gas lasers, firing results in a very abrupt increase in gas temperature and in severe disruption of the gas. However, the gas vortex almost immediately restores the gas to its pre-firing condition. That is, almost all of the waste heat is transferred radially to the laser wall, and the original gas-flow pattern is restored. As a result, the power output of the laser is increased significantly, and the laser firing repetition rate is markedly increased.

Laser utilizing a gaseous lasing medium and method for operating the same

DOEpatents

Zerr, B.A.

1983-10-18

The invention relates to an improvement in gas lasers and a method of operating the same. In one aspect, the invention is an improved method for operating a high-power gas laser. The improvement comprises introducing the gas lasing medium tangentially to the laser tube at a pressure establishing a forced vortex in the tube. The vortex defines an axially extending core region characterized by a low pressure and temperature relative to the gas inlet and the exterior of the vortex. An electrical discharge is established in the core region to initiate lasing of the gas. The gas discharge from the tube is passed through a diffuser. As in conventional gas lasers, firing results in a very abrupt increase in gas temperature and in severe disruption of the gas. However, the gas vortex, almost immediately restores the gas to its prefiring condition. That is, almost all of the waste heat is transferred radially to the laser wall, and the original gas-flow pattern is restored. As a result, the power output of the laser is increased significantly, and the laser firing repetition rate is markedly increased.

Metasurface-assisted orbital angular momentum carrying Bessel-Gaussian Laser: proposal and simulation.

PubMed

Zhou, Nan; Wang, Jian

2018-05-23

Bessel-Gaussian beams have distinct properties of suppressed diffraction divergence and self-reconstruction. In this paper, we propose and simulate metasurface-assisted orbital angular momentum (OAM) carrying Bessel-Gaussian laser. The laser can be regarded as a Fabry-Perot cavity formed by one partially transparent output plane mirror and the other metasurface-based reflector mirror. The gain medium of Nd:YVO 4 enables the lasing wavelength at 1064 nm with a 808 nm laser serving as the pump. The sub-wavelength structure of metasurface facilitates flexible spatial light manipulation. The compact metasurface-based reflector provides combined phase functions of an axicon and a spherical mirror. By appropriately selecting the size of output mirror and inserting mode-selection element in the laser cavity, different orders of OAM-carrying Bessel-Gaussian lasing modes are achievable. The lasing Bessel-Gaussian 0 , Bessel-Gaussian 01 + , Bessel-Gaussian 02 + and Bessel-Gaussian 03 + modes have high fidelities of ~0.889, ~0.889, ~0.881 and ~0.879, respectively. The metasurface fabrication tolerance and the dependence of threshold power and output lasing power on the length of gain medium, beam radius of pump and transmittance of output mirror are also discussed. The obtained results show successful implementation of metasurface-assisted OAM-carrying Bessel-Gaussian laser with favorable performance. The metasurface-assisted OAM-carrying Bessel-Gaussian laser may find wide OAM-enabled communication and non-communication applications.

High-power, surface-emitting quantum cascade laser operating in a symmetric grating mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boyle, C.; Sigler, C.; Kirch, J. D.

2016-03-21

Grating-coupled surface-emitting (GCSE) lasers generally operate with a double-lobed far-field beam pattern along the cavity-length direction, which is a result of lasing being favored in the antisymmetric grating mode. We experimentally demonstrate a GCSE quantum-cascade laser design allowing high-power, nearly single-lobed surface emission parallel to the longitudinal cavity. A 2nd-order Au-semiconductor distributed-feedback (DFB)/distributed-Bragg-reflector (DBR) grating is used for feedback and out-coupling. The DFB and DBR grating regions are 2.55 mm- and 1.28 mm-long, respectively, for a total grating length of 5.1 mm. The lasers are designed to operate in a symmetric (longitudinal) grating mode by causing resonant coupling of the guided optical modemore » to the antisymmetric surface-plasmon modes of the 2nd-order metal/semiconductor grating. Then, the antisymmetric modes are strongly absorbed by the metal in the grating, causing the symmetric mode to be favored to lase, which, in turn, produces a single-lobed beam over a range of grating duty-cycle values of 36%–41%. Simulations indicate that the symmetric mode is always favored to lase, independent of the random phase of reflections from the device's cleaved ends. Peak pulsed output powers of ∼0.4 W were measured with nearly single-lobe beam-pattern (in the longitudinal direction), single-spatial-mode operation near 4.75 μm wavelength. Far-field measurements confirm a diffraction-limited beam pattern, in agreement with simulations, for a source-to-detector separation of 2 m.« less

Fusion pumped laser

DOEpatents

Pappas, D.S.

1987-07-31

The apparatus of this invention may comprise a system for generating laser radiation from a high-energy neutron source. The neutron source is a tokamak fusion reactor generating a long pulse of high-energy neutrons and having a temperature and magnetic field effective to generate a neutron flux of at least 10/sup 15/ neutrons/cm/sup 2//center dot/s. Conversion means are provided adjacent the fusion reactor at a location operable for converting the high-energy neutrons to an energy source with an intensity and energy effective to excite a preselected lasing medium. A lasing medium is spaced about and responsive to the energy source to generate a population inversion effective to support laser oscillations for generating output radiation. 2 figs., 2 tabs.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, Jr., Richard P.; Crawford, Mary H.

1996-01-01

A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.

Theory of lasing in a multiple-scattering medium

NASA Astrophysics Data System (ADS)

John, Sajeev; Pang, Gendi

1996-10-01

In several recent experiments, isotropic lasing action was observed in paints that contain rhodamine 640 dye molecules in methanol solution as gain media and titania particles as optical scatterers. These so-called paint-on laser systems are extraordinary because they are highly disordered systems. The microscopic mechanism for laser activity and the coherence properties of light emission in this multiple-light-scattering medium have not yet been elucidated. In this paper we derive the emission intensity properties of a model dye system with excited singlet and triplet electronic energy levels, which is immersed in a multiple-scattering medium with transport mean free path l*. Using physically reasonable estimates for the absorption and emission cross section for the singlet and triplet manifolds, and the singlet-triplet intersystem crossing rate, we solve the nonlinear laser rate equations for the dye molecules. This leads to a diffusion equation for the light intensity in the medium with a nonlinear intensity-dependent gain coefficient. Using this model we are able to account for nearly all of the experimentally observed properties of laser paint reported so far when l*>>λ0, the emission wavelength. This includes the dependence of the peak intensity of amplified emission on the mean free path l*, the dye concentration ρ, and the pump intensity characteristics. Our model recaptures the collapse of the emission linewidth at a specific threshold pump intensity and describes how this threshold intensity varies with l*. In addition, our model predicts a dramatic increase in the peak intensity and a further lowering of the lasing threshold for the strong scattering limit l*-->λ0. This suggests a striking enhancement of the characteristics of laser paint near the photon localization threshold in a disordered medium.

Tunable Infrared Semiconductor Lasers

DTIC Science & Technology

2013-12-20

stripe to different positions of an addressable chirped, location-dependent period grating to select the different lasing wavelengths. Interferometric...grating or vernier effects. Our tuning mechanism is to shift the pump stripe to different positions of an addressable chirped, location-dependent period... stripe is applied and the lateral direction is the perpendicular direction across the pump stripe and parallel to the grating lines.  The chirped

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging

PubMed Central

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A. Douglas; Choma, Michael A.; Cao, Hui

2015-01-01

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications. PMID:25605946

Low spatial coherence electrically pumped semiconductor laser for speckle-free full-field imaging.

PubMed

Redding, Brandon; Cerjan, Alexander; Huang, Xue; Lee, Minjoo Larry; Stone, A Douglas; Choma, Michael A; Cao, Hui

2015-02-03

The spatial coherence of laser sources has limited their application to parallel imaging and projection due to coherent artifacts, such as speckle. In contrast, traditional incoherent light sources, such as thermal sources or light emitting diodes (LEDs), provide relatively low power per independent spatial mode. Here, we present a chip-scale, electrically pumped semiconductor laser based on a novel design, demonstrating high power per mode with much lower spatial coherence than conventional laser sources. The laser resonator was fabricated with a chaotic, D-shaped cavity optimized to achieve highly multimode lasing. Lasing occurs simultaneously and independently in ∼1,000 modes, and hence the total emission exhibits very low spatial coherence. Speckle-free full-field imaging is demonstrated using the chaotic cavity laser as the illumination source. The power per mode of the sample illumination is several orders of magnitude higher than that of a LED or thermal light source. Such a compact, low-cost source, which combines the low spatial coherence of a LED with the high spectral radiance of a laser, could enable a wide range of high-speed, full-field imaging and projection applications.

S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, H; Zulkifli, M Z; Hassan, N A

2013-10-31

We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum withmore » a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)« less

Quantifying stochasticity in the dynamics of delay-coupled semiconductor lasers via forbidden patterns.

PubMed

Tiana-Alsina, Jordi; Buldú, Javier M; Torrent, M C; García-Ojalvo, Jordi

2010-01-28

We quantify the level of stochasticity in the dynamics of two mutually coupled semiconductor lasers. Specifically, we concentrate on a regime in which the lasers synchronize their dynamics with a non-zero lag time, and the leader and laggard roles alternate irregularly between the lasers. We analyse this switching dynamics in terms of the number of forbidden patterns of the alternate time series. The results reveal that the system operates in a stochastic regime, with the level of stochasticity decreasing as the lasers are pumped further away from their lasing threshold. This behaviour is similar to that exhibited by a single semiconductor laser subject to external optical feedback, as its dynamics shifts from the regime of low-frequency fluctuations to coherence collapse. This journal is © 2010 The Royal Society

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: High-frequency impedance and spontaneous carrier lifetime in narrow-stripe semiconductor injection lasers

NASA Astrophysics Data System (ADS)

Hoernlein, W.

1988-11-01

Measurements were made of the complex reflection coefficient of hf (10-400 MHz) signals from semiconductor injection lasers supplied with a direct bias current ranging from several milliamperes up to the threshold value or higher. The hf impedance was calculated. The parameters of the equivalent electrical circuit made it possible to predict the modulation characteristics. The impedance corresponding to currents below the lasing threshold was used to find the differential carrier lifetime from the RC constant of the p-n junction of a laser diode. A description of the apparatus is supplemented by an account of the method used in calculation of the electrical parameters and carrier lifetimes. The first results obtained using this apparatus and method are reported.

Semiconductor laser devices having lateral refractive index tailoring

DOEpatents

Ashby, Carol I. H.; Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1990-01-01

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stettner, T., E-mail: Thomas.Stettner@wsi.tum.de, E-mail: Gregor.Koblmueller@wsi.tum.de, E-mail: Jonathan.Finley@wsi.tum.de; Zimmermann, P.; Loitsch, B.

2016-01-04

We demonstrate the growth and single-mode lasing operation of GaAs-AlGaAs core-multishell nanowires (NW) with radial single and multiple GaAs quantum wells (QWs) as active gain media. When subject to optical pumping lasing emission with distinct s-shaped input-output characteristics, linewidth narrowing and emission energies associated with the confined QWs are observed. Comparing the low temperature performance of QW NW laser structures having 7 coaxial QWs with a nominally identical structure having only a single QW shows that the threshold power density reduces several-fold, down to values as low as ∼2.4 kW/cm{sup 2} for the multiple QW NW laser. This confirms that themore » individual radial QWs are electronically weakly coupled and that epitaxial design can be used to optimize the gain characteristics of the devices. Temperature-dependent investigations show that lasing prevails up to 300 K, opening promising new avenues for efficient III–V semiconductor NW lasers with embedded low-dimensional gain media.« less

On pulse duration of self-terminating lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bokhan, P A

2011-02-28

The problem of the maximum pulse duration {tau}{sub max} of self-terminating lasers is considered. It is shown that the duration depends on the transition probability in the laser channel, on the decay rate of the resonant state in all other channels, and on the excitation rate of the metastable state. As a result, {tau}{sub max} is found to be significantly shorter than previously estimated. The criteria for converting the 'self-terminating' lasing to quasi-cw lasing are determined. It is shown that in the case of nonselective depopulation of the metastable state, for example in capillary lasers or in a fast flowmore » of the active medium gas, it is impossible to obtain continuous lasing. Some concrete examples are considered. It is established that in several studies of barium vapour lasers ({lambda} = 1.5 {mu}m) and nitrogen lasers ({lambda} = 337 nm), collisional lasing is obtained by increasing the relaxation rate of the metastable state in collisions with working particles (barium atoms and nitrogen molecules). (lasers)« less

Broad Wavelength Tunable Robust Lasing from Single-Crystal Nanowires of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, I).

PubMed

Fu, Yongping; Zhu, Haiming; Stoumpos, Constantinos C; Ding, Qi; Wang, Jue; Kanatzidis, Mercouri G; Zhu, Xiaoyang; Jin, Song

2016-08-23

Lead halide perovskite nanowires (NWs) are emerging as a class of inexpensive semiconductors with broad bandgap tunability for optoelectronics, such as tunable NW lasers. Despite exciting progress, the current organic-inorganic hybrid perovskite NW lasers suffer from limited tunable wavelength range and poor material stability. Herein, we report facile solution growth of single-crystal NWs of inorganic perovskite CsPbX3 (X = Br, Cl) and their alloys [CsPb(Br,Cl)3] and a low-temperature vapor-phase halide exchange method to convert CsPbBr3 NWs into perovskite phase CsPb(Br,I)3 alloys and metastable CsPbI3 with well-preserved perovskite crystal lattice and NW morphology. These single crystalline NWs with smooth end facets and subwavelength dimensions are ideal Fabry-Perot cavities for NW lasers. Optically pumped tunable lasing across the entire visible spectrum (420-710 nm) is demonstrated at room temperature from these NWs with low lasing thresholds and high-quality factors. Such highly efficient lasing similar to what can be achieved with organic-inorganic hybrid perovskites indicates that organic cation is not essential for light emission application from these lead halide perovskite materials. Furthermore, the CsPbBr3 NW lasers show stable lasing emission with no measurable degradation after at least 8 h or 7.2 × 10(9) laser shots under continuous illumination, which are substantially more robust than their organic-inorganic counterparts. The Cs-based perovskites offer a stable material platform for tunable NW lasers and other nanoscale optoelectronic devices.

Gain-clamped semiconductor optical amplifiers based on compensating light: Theoretical model and performance analysis

NASA Astrophysics Data System (ADS)

Jia, Xin-Hong; Wu, Zheng-Mao; Xia, Guang-Qiong

2006-12-01

It is well known that the gain-clamped semiconductor optical amplifier (GC-SOA) based on lasing effect is subject to transmission rate restriction because of relaxation oscillation. The GC-SOA based on compensating effect between signal light and amplified spontaneous emission by combined SOA and fiber Bragg grating (FBG) can be used to overcome this problem. In this paper, the theoretical model on GC-SOA based on compensating light has been constructed. The numerical simulations demonstrate that good gain and noise figure characteristics can be realized by selecting reasonably the FBG insertion position, the peak reflectivity of FBG and the biasing current of GC-SOA.

Enhancing absorption in coated semiconductor nanowire/nanorod core-shell arrays using active host matrices

NASA Astrophysics Data System (ADS)

Jule, Leta; Dejene, Francis; Roro, Kittessa

2016-12-01

In the present work, we investigated theoretically and experimentally the interaction of radiation field phenomena interacting with arrays of nanowire/nanorod core-shell embedded in active host matrices. The optical properties of composites are explored including the case when the absorption of propagating wave by dissipative component is completely compensated by amplification in active (lasing) medium. On the basis of more elaborated modeling approach and extended effective medium theory, the effective polarizability and the refractive index of electromagnetic mode dispersion of the core-shell nanowire arrays are derived. ZnS(shell)-coated by sulphidation process on ZnO(shell) nanorod arrays grown on (100) silicon substrate by chemical bath deposition (CBD) has been used for theoretical comparison. Compared with the bare ZnO nanorods, ZnS-coated core/shell nanorods exhibit a strongly reduced ultraviolet (UV) emission and a dramatically enhanced deep level (DL) emission. Obviously, the UV and DL emission peaks are attributed to the emissions of ZnO nanorods within ZnO/ZnS core/shell nanorods. The reduction of UV emission after ZnS coating seems to agree with the charge separation mechanism of type-II band alignment that holes transfer from the core to shell, which would quench the UV emission to a certain extent. Our theoretical calculations and numerical simulation demonstrate that the use of active host (amplifying) medium to compensate absorption at metallic inclusions. Moreover the core-shell nanorod/nanowire arrays create the opportunity for broad band absorption and light harvesting applications.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Ho3+ doped fluoroaluminate glass fibers for 2.9 µm lasing

NASA Astrophysics Data System (ADS)

Jia, S. J.; Jia, Z. X.; Yao, C. F.; Wang, S. B.; Jiang, H. W.; Zhang, L.; Feng, Y.; Qin, G. S.; Ohishi, Y.; Qin, W. P.

2018-01-01

Ho3+ doped fluoroaluminate glass fibers based on chemically durable AlF3-BaF2-YF3-PbF2-MgF2-CaF2 glasses are fabricated by using a rod-in-tube method. By using an 84 cm long Ho3+-doped fluoroaluminate glass fiber as the gain medium and a 1120 nm fiber laser as the pump source, lasing at 2868 nm is obtained, the maximum unsaturated power is about 57 mW for a pump power of 1224 mW, and the corresponding slope efficiency is ~5.1%. The effect of the fiber length on lasing at 2868 nm is also investigated. Our results show that Ho3+-doped fluoroaluminate glass fibers are promising gain media for 2.9 µm laser applications.

Monolithically integrated solid state laser and waveguide using spin-on glass

DOEpatents

Ashby, C.I.H.; Hohimer, J.P.; Neal, D.R.; Vawter, G.A.

1995-10-31

A monolithically integrated photonic circuit is disclosed combining a semiconductor source of excitation light with an optically active waveguide formed on the substrate. The optically active waveguide is preferably formed of a spin-on glass to which are added optically active materials which can enable lasing action, optical amplification, optical loss, or frequency conversion in the waveguide, depending upon the added material. 4 figs.

Violet-to-Blue Gain and Lasing from Colloidal CdS Nanoplatelets: Low-Threshold Stimulated Emission Despite Low Photoluminescence Quantum Yield

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diroll, Benjamin T.; Talapin, Dmitri V.; Schaller, Richard D.

Amplified spontaneous emission (ASE) and lasing from solution-processed materials are demonstrated in the challenging violet-to-blue (430–490 nm) spectral region for colloidal nanoplatelets of CdS and newly synthesized core/shell CdS/ZnS nanoplatelets. Despite modest band-edge photoluminescence quantum yields of 2% or less for single excitons, which we show results from hole trapping, the samples exhibit low ASE thresholds. Furthermore, four-monolayer CdS samples show ASE at shorter wavelengths than any reported film of colloidal quantum-confined material. This work underlines that low quantum yields for single excitons do not necessarily lead to a poor gain medium. The low ASE thresholds originate from negligible dispersionmore » in thickness, large absorption cross sections of 2.8 × 10–14 cm–2, and rather slow (150 to 300 ps) biexciton recombination. We show that under higher-fluence excitation, ASE can kinetically outcompete hole trapping. Using nanoplatelets as the gain medium, lasing is observed in a linear optical cavity. This work confirms the fundamental advantages of colloidal quantum well structures as gain media, even in the absence of high photoluminescence efficiency.« less

High power tube solid-state laser with zigzag propagation of pump and laser beam

NASA Astrophysics Data System (ADS)

Savich, Michael

2015-02-01

A novel resonator and pumping design with zigzag propagation of pumping and laser beams permits to design an improved tube Solid State Laser (SSL), solving the problem of short absorption path to produce a high power laser beam (100 - 1000kW). The novel design provides an amplifier module and laser oscillator. The tube-shaped SSL includes a gain element fiber-optically coupled to a pumping source. The fiber optic coupling facilitates light entry at compound Brewster's angle of incidence into the laser gain element and uses internal reflection to follow a "zigzag" path in a generally spiral direction along the length of the tube. Optics are arranged for zigzag propagation of the laser beam, while the cryogenic cooling system is traditional. The novel method of lasing uses advantages of cylindrical geometry to reach the high volume of gain medium with compactness and structural rigidity, attain high pump density and uniformity, and reach a low threshold without excessive increase of the temperature of the crystal. The design minimizes thermal lensing and stress effects, and provides high gain amplification, high power extraction from lasing medium, high pumping and lasing efficiency and a high beam quality.

Cautionary note concerning the CuSO4 X-ray laser. [alternative to lasing action

NASA Technical Reports Server (NTRS)

Billman, K. W.; Mark, H.

1973-01-01

For the so far unconfirmed lasing action claimed by Kepros et al. (1972) to have been obtained by focusing a 1.06-micron radiation of a q-switched Nd(3+) glass laser to a small cylindrical volume inside a CuSO4-doped gelatin medium supported between two glass plates, an alternate explanation is proposed that does not depend on the assumption of laser action in copper. The proposed explanation shows how collimated X-ray beams might be created under the experimental conditions described by Kepros et al.

Apparatus for improving the working time of the XeBr laser

DOEpatents

Sander, R.K.; Balog, G.; Seegmiller, E.T.

1980-03-04

In XeBr lasers which make use of HBr as the source of bromine, it has been found that the working life of the laser is limited because of dissociation of the HBr in the lasing region to form H/sub 2/ and Br/sub 2/. Accordingly, apparatus is disclosed for substantially improving the working time of the XeBr laser wherein means are provided for recombining H/sub 2/ and Br/sub 2/ into HBr and for continuously circulating the gaseous working medium from the lasing region through the recombination region.

Non-equilibrium Green's function calculation of AlGaAs-well-based and GaSb-based terahertz quantum cascade laser structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yasuda, H., E-mail: yasuda@nict.go.jp; Hosako, I.

2015-03-16

We investigate the performance of terahertz quantum cascade lasers (THz-QCLs) based on Al{sub x}Ga{sub 1−x}As/Al{sub y}Ga{sub 1−y}As and GaSb/AlGaSb material systems to realize higher-temperature operation. Calculations with the non-equilibrium Green's function method reveal that the AlGaAs-well-based THz-QCLs do not show improved performance, mainly because of alloy scattering in the ternary compound semiconductor. The GaSb-based THz-QCLs offer clear advantages over GaAs-based THz-QCLs. Weaker longitudinal optical phonon–electron interaction in GaSb produces higher peaks in the spectral functions of the lasing levels, which enables more electrons to be accumulated in the upper lasing level.

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

PubMed Central

Burgess, Tim; Saxena, Dhruv; Mokkapati, Sudha; Li, Zhe; Hall, Christopher R.; Davis, Jeffrey A.; Wang, Yuda; Smith, Leigh M.; Fu, Lan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati

2016-01-01

Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications. PMID:27311597

Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

PubMed Central

2014-01-01

Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

Control of lasing from a highly photoexcited semiconductor microcavity

NASA Astrophysics Data System (ADS)

Hsu, Feng-Kuo

Technological advances in the fabrication of optical cavities and crystal growth have enabled the studies on macroscopic quantum states and emergent nonequilibrium phenomena of light-matter hybrids in condensed matter. Optical excitations in a semiconductor microcavity can result in a coupled electron-hole-photon (e-h-gamma) system, in which various many-body physics can be studied by varying particle densities and particle-particle interactions. Recently there have been reports of phenomena analogous to Bose-Einstein condensates or superfluids for exciton-polaritons in a microcavity. An exciton-polariton is a quasiparticle resulting from strong coupling between the cavity light field and the exciton (e-h pair) transition, and typically is only stable at a low density ( 10 11 to 1012 cm-2 or less). At a higher density, it has been theoretically predicted that pairing of electrons and holes can result in a BCS-like state at cryogenic temperatures, which can produce cooperative radiation known as superradiance. In this work, we explore cooperative phenomena caused by e-h correlation and many-body effect in a highly photoexcited microcavity at room temperature. High-density e-h plasmas in a photoexcited microcavity are studied under the following conditions: (1) the sample is photoexcited GaAs-based microcavity with large detuning between the band gap Eg of quantum well and cavity resonance to prevent carriers from radiative loss, (2) the density of e-h pairs is high enough to build long-range correlation with the assistance of cavity light field. The Fermi level of electron-hole pairs is about 80 meV above Eg, and (3) the e-h correlation is stabilized through thermal management, which includes modulating the excitation pulse laser temporally and spatially to reduce the heating and carrier diffusion effect. We have observed ultrafast (sub-10 picoseconds) spin-polarized lasing with sizable energy shifts and linewidth broadenings as pump flux is increased. With optically induced confinement, multiple-lasing modes were produced, with sequential lasing time depending on energies. These phenomena are attributed to the spin-dependent stimulated emission from correlated e-h pairs. We further performed a non-degenerate pump-probe spectroscopy to investigate dynamic carrier relaxation. We find transient resonances with significant changes in differential reflectivity that can last more than 1 ns. The resonance exhibits a polarization-dependent splitting in about 1 meV under circularly polarized pumping. All the aforementioned phenomena can be explained by the combination effect of carrier-induced refractive index change and the light-induced e-h correlation. Our research enriches the studies of coupled e-h-gamma systems at room temperature and a high-density regime; however, further experiments and theoretical works are required to claim and clarify the formation of such correlated e-h pairs in a highly photoexcited microcavity. Nonetheless, we have demonstrated that many-body effects can be harnessed to control lasing dynamics and energies in highly photoexcited semiconductor microcavities. We expect an improved understanding of the many-body effect resulted from e-h pairing to help the development of polarization-controlled and wavelength-tunable lasers.

Effect of the pump rate and loss perturbations on the lasing dynamics of a Fabry-Perot laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, N; Ledenev, V I

2010-11-13

Transition from generation of the fundamental mode to generation of the fundamental and first modes is studied numerically under the action of nonstationary asymmetric perturbations of pump rate and loss distributions in the active medium layer. It is shown that emergence of perturbations directly leads to excitation of the first mode with significant amplitude. The regime of two-mode lasing in the presence of perturbations is shown to appear at a pump rate that is smaller than the threshold one for two-mode lasing in the absence of perturbations. It is found that the first-mode amplitude has a maximum at a frequencymore » of intermode beatings of an unfilled Fabry-Perot resonator. It is also determined that emergence of nonstationary asymmetric perturbations leads to an increase in the average intensity of the fundamental mode. Various transition regimes to two-mode lasing are compared in different types and periods of perturbations. The operability of the scheme controlling the mode composition of laser radiation is considered. (lasers)« less

Direct nuclear pumped laser

DOEpatents

Miley, George H.; Wells, William E.; DeYoung, Russell J.

1978-01-01

There is provided a direct nuclear pumped gas laser in which the lasing mechanism is collisional radiated recombination of ions. The gas laser active medium is a mixture of the gases, with one example being neon and nitrogen.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, R.; Pocha, M.D.

1994-08-23

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, Rex; Pocha, Michael D.

1994-01-01

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

Visible-wavelength semiconductor lasers and arrays

DOEpatents

Schneider, R.P. Jr.; Crawford, M.H.

1996-09-17

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

NASA Technical Reports Server (NTRS)

Thaik, Myo; Hommerich, U.; Schwartz, R. N.; Wilson, R. G.; Zavada, J. M.

1998-01-01

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Light amplification by seeded Kerr instability

NASA Astrophysics Data System (ADS)

Vampa, G.; Hammond, T. J.; Nesrallah, M.; Naumov, A. Yu.; Corkum, P. B.; Brabec, T.

2018-02-01

Amplification of femtosecond laser pulses typically requires a lasing medium or a nonlinear crystal. In either case, the chemical properties of the lasing medium or the momentum conservation in the nonlinear crystal constrain the frequency and the bandwidth of the amplified pulses. We demonstrate high gain amplification (greater than 1000) of widely tunable (0.5 to 2.2 micrometers) and short (less than 60 femtosecond) laser pulses, up to intensities of 1 terawatt per square centimeter, by seeding the modulation instability in an Y3Al5O12 crystal pumped by femtosecond near-infrared pulses. Our method avoids constraints related to doping and phase matching and therefore can occur in a wider pool of glasses and crystals even at far-infrared frequencies and for single-cycle pulses. Such amplified pulses are ideal to study strong-field processes in solids and highly excited states in gases.

Cellular dye lasers: lasing thresholds and sensing in a planar resonator

PubMed Central

Humar, Matjaž; Gather, Malte C.; Yun, Seok-Hyun

2015-01-01

Biological cell lasers are promising novel building blocks of future biocompatible optical systems and offer new approaches to cellular sensing and cytometry in a microfluidic setting. Here, we demonstrate a simple method for providing optical gain by using a variety of standard fluorescent dyes. The dye gain medium can be located inside or outside a cell, or in both, which gives flexibility in experimental design and makes the method applicable to all cell types. Due to the higher refractive index of the cytoplasm compared to the surrounding medium, a cell acts as a convex lens in a planar Fabry-Perot cavity. Its effect on the stability of the laser cavity is analyzed and utilized to suppress lasing outside cells. The resonance modes depend on the shape and internal structure of the cell. As proof of concept, we show how the laser output modes are affected by the osmotic pressure. PMID:26480446

Apparatus for improving the working time of the XeBr laser

DOEpatents

Sander, Robert K.; Balog, George; Seegmiller, Emma T.

1982-01-01

In XeBr lasers which make use of HBr as the source of bromine, it has been found that the working life of the laser is limited because of dissociation of the HBr in the lasing region to form H.sub.2 and Br.sub.2. Accordingly, apparatus is disclosed for substantially improving the working time of the XeBr laser wherein means are provided for recombining H.sub.2 and Br.sub.2 into HBr and for continuously circulating the gaseous working medium from the lasing region through the recombination region. BACKGROUND OF THE INVENTION

Fibre laser based on tellurium-doped active fibre

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alyshev, S V; Ryumkin, K E; Shubin, A V

2014-02-28

We have studied the lasing properties of tellurium-doped germanosilicate fibre, identified its gain and excited-state absorption bands, and assessed the effect of cooling to low temperature (77 K) on the bands. The excitation spectrum of the near-IR luminescence in the fibre has been measured. Lasing at 1.55 mm has been demonstrated for the first time in this gain medium at liquidnitrogen temperature and pump wavelengths of 1.064 and 1.085 mm. The measured Raman spectrum of the fibre provides some insight into the structure of the near-IR luminescence centre. (letters)

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

NASA Astrophysics Data System (ADS)

Shi, Bei; Zhu, Si; Li, Qiang; Tang, Chak Wah; Wan, Yating; Hu, Evelyn L.; Lau, Kei May

2017-03-01

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

Generation of stimulated noncoherent radiation in light-scattering media exhibiting chemical reactions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Izmailov, I.A.; Kochelap, V.A.; Mel'nikov, L.Y.

1982-05-01

It is proposed that a feedback resulting from scattering be used to achieve lasing in a disperse reactive medium. The example of a simple two-level system shows that under advanced lasing conditions the quantum efficiency of the radiation emission approaches the quantum efficiency of the excitation of the upper level, and the emission spectrum becomes much narrower. Feasibility of chemical pumping of such a laser is estimated on the basis of calculations of heterophase burning of a drop of a fuel in an oxidizing atmosphere. The growth increment of light is calculated and the threshold conditions for the excitation ofmore » lasing are found. Examples are given to illustrate the feasibility of purely chemical pumping of a laser with a nonresonant feedback. It is shown that dense reactive media can be used in such lasers.« less

Perspectives: Nanofibers and nanowires for disordered photonics

NASA Astrophysics Data System (ADS)

Pisignano, Dario; Persano, Luana; Camposeo, Andrea

2017-03-01

As building blocks of microscopically non-homogeneous materials, semiconductor nanowires and polymer nanofibers are emerging component materials for disordered photonics, with unique properties of light emission and scattering. Effects found in assemblies of nanowires and nanofibers include broadband reflection, significant localization of light, strong and collective multiple scattering, enhanced absorption of incident photons, synergistic effects with plasmonic particles, and random lasing. We highlight recent related discoveries, with a focus on material aspects. The control of spatial correlations in complex assemblies during deposition, the coupling of modes with efficient transmission channels provided by nanofiber waveguides, and the embedment of random architectures into individually coded nanowires will allow the potential of these photonic materials to be fully exploited, unconventional physics to be highlighted, and next-generation optical devices to be achieved. The prospects opened by this technology include enhanced random lasing and mode-locking, multi-directionally guided coupling to sensors and receivers, and low-cost encrypting miniatures for encoders and labels.

Electrically Injected UV-Visible Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, George T.; Li, Changyi; Li, Qiming

2015-09-01

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasersmore » emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.« less

Proton-Controlled Organic Microlaser Switch.

PubMed

Gao, Zhenhua; Zhang, Wei; Yan, Yongli; Yi, Jun; Dong, Haiyun; Wang, Kang; Yao, Jiannian; Zhao, Yong Sheng

2018-05-25

Microscale laser switches have been playing irreplaceable roles in the development of photonic devices with high integration levels. However, it remains a challenge to switch the lasing wavelengths across a wide range due to relatively fixed energy bands in traditional semiconductors. Here, we report a strategy to switch the lasing wavelengths among multiple states based on a proton-controlled intramolecular charge-transfer (ICT) process in organic dye-doped flexible microsphere resonant cavities. The protonic acids can effectively bind onto the ICT molecules, which thus enhance the ICT strength of the dyes and lead to a red-shifted gain behavior. On this basis, the gain region was effectively modulated by using acids with different proton-donating ability, and as a result, laser switching among multiple wavelengths was achieved. The results will provide guidance for the rational design of miniaturized lasers with performances based on the characteristic of organic optoelectronic materials.

Integrated resonant micro-optical gyroscope and method of fabrication

DOEpatents

Vawter, G Allen [Albuquerque, NM; Zubrzycki, Walter J [Sandia Park, NM; Guo, Junpeng [Albuquerque, NM; Sullivan, Charles T [Albuquerque, NM

2006-09-12

An integrated optic gyroscope is disclosed which is based on a photonic integrated circuit (PIC) having a bidirectional laser source, a pair of optical waveguide phase modulators and a pair of waveguide photodetectors. The PIC can be connected to a passive ring resonator formed either as a coil of optical fiber or as a coiled optical waveguide. The lasing output from each end of the bidirectional laser source is phase modulated and directed around the passive ring resonator in two counterpropagating directions, with a portion of the lasing output then being detected to determine a rotation rate for the integrated optical gyroscope. The coiled optical waveguide can be formed on a silicon, glass or quartz substrate with a silicon nitride core and a silica cladding, while the PIC includes a plurality of III V compound semiconductor layers including one or more quantum well layers which are disordered in the phase modulators and to form passive optical waveguides.

On the mechanism of transverse-mode beatings in a Fabry - Perot laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, N; Ledenev, V I

2010-06-23

The mechanism of emergence of fundamental-mode and first-mode beatings in the case of a step-wise increase in the pump rate is studied under the stationary single-mode lasing conditions. Investigation is based on the numerical solution of nonstationary wave equations in a resonator in the quasi-optic approximation and on the equation for a relaxation-type medium as well as on the use of the first two Hermite - Gaussian polynomials {psi}{sub 0,1}(x) to obtain the distribution projections I{sub 0,1}(t), g{sub 0,1}(t) of the radiation intensity and gain, respectively. It is shown that the transverse-mode beatings emerge at early stages of two-mode lasing,more » the appearance of radiation intensity oscillations in the active medium preceding the development of the gain oscillations. The time of the passage of two-mode lasing to the stationary regime is determined. The phase shift {pi}/2 between the oscillations I{sub 1}(t) and g{sub 1}(t) is found for the established beating regime and the modulation depth {Delta}I averaged over the output aperture of the radiation intensity in the established two-mode regime is shown to be proportional to the pump rate excess k over the single-mode lasing threshold. A scheme for controlling the mode composition of laser radiation is proposed, which is based on the rules for determining I{sub 0,1}(t) by the sensor signals. The efficiency of the scheme is studied. The scheme employs two field intensity sensors mounted inside the resonator behind the output aperture. (resonators. modes)« less

Multiwavelength fiber laser

NASA Astrophysics Data System (ADS)

Das, Goutam

This thesis studies experimentally and theoretically a few designs of multiwavelength fiber lasers. Four different configurations are proposed and demonstrated; all of which can operate at room temperatures. An elliptical core erbium-doped fiber is used as the gain medium, which is single mode along the minor axis and multimode along the major axis. The principle of operation is based on the anisotropic gain effect of an elliptical core erbium-doped fiber. Stable multiwavelength operation is achieved at room temperatures. A polarization controller is used to control and select the lasing wavelengths. The stability of the lasing lines, in the presence of anisotropic gain effects, has been examined. The maximum number of stable lasing lines that may be obtained depends on the number of modes supported by the erbium-doped fiber. The effects of the dimensions of the fiber are also studied. A ring resonator is formed using an elliptical core erbium-doped fiber. The basic theoretical expression for the threshold pump power for each lasing line is developed. The theoretical results are in excellent agreement with the values obtained experimentally. The dependence of the separations between the lasing wavelengths on the dimensions of the erbium-doped fiber is examined. A theoretical study of a Sagnac loop interferometer and its applications in a passive ring resonator is reported. A ring resonator is formed by using the Sagnac loop filter in the cavity. The experimental results show that the separations between the lasing wavelengths may be controlled by adjusting the birefringence of the Sagnac loop interferometer. These experimental results agree with the theoretical findings. Similarly, another resonator is formed using a Sagnac loop reflector and a broadband reflector in a Fabry-Perot configuration. An optical switch is made, where two wavelengths may be switched by using a polarization controller in the cavity. To study the stability of the lasing wavelengths, the outputs of the lasers are monitored for a few hours using an optical spectrum analyzer with a resolution bandwidth of 0.06 nm. The experimental results show that intensity fluctuations of the lasing lines of less than 0.2 dB are possible with no changes in wavelength. High concentrations of erbium in the fiber degrade the stability of the lasing wavelengths resulting in greater intensity fluctuations. The lasers may be made to lase in the C band or L band by adjusting the length of the erbium-doped fiber in the cavity.

Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tran, T.-T. D.; Chen, R.; Ng, K. W.

2014-09-15

As-grown InGaAs nanoneedle lasers, synthesized at complementary metal–oxide–semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.

Gold Coating

NASA Technical Reports Server (NTRS)

1997-01-01

Epner Technology Inc. responded to a need from Goddard Space Flight Center for the ultimate in electroplated reflectivity needed for the Mars Global Surveyor Mars Orbiter Laser Altimeter (MOLA). Made of beryllium, the MOLA mirror was coated by Epner Technology Laser Gold process, specially improved for the project. Improved Laser Gold- coated reflectors have found use in an epitaxial reactor built for a large semiconductor manufacturer as well as the waveguide in Braun-Thermoscan tympanic thermometer and lasing cavities in various surgical instruments.

New results for temperature rise in gain medium of operating DPAL causing its degradation

NASA Astrophysics Data System (ADS)

Zhdanov, B. V.; Rotondaro, M. D.; Shaffer, M. K.; Knize, R. J.

2017-10-01

Diode Pumped Alkali Laser (DPAL) is one of the main candidates for development of a high power directed energy system producing laser beam from a single aperture with high spatial quality. Currently, several groups in the US and abroad demonstrated DPAL systems with kW level output power and efficiency higher than 50%. At the same time, the DPAL power scaling experiments revealed some limiting effects, which require detailed study to understand the nature of these effects and ways to mitigate them. Examples of such effects are output power degradation in time, alkali cell windows and gain medium contamination and damage that causes lasing efficiency decrease or even lasing termination. These problems can be connected to thermal effects, ionization, chemical interactions between the gain medium components and alkali cells materials. Study of all these and, possibly, other limiting effects and ways to mitigate them is very important for high power DPAL development. In this paper we present our new results of experiments on measurements of the temperature rise in the gain medium of operating DPAL leading to the output power degradation even before visible damage in the gain cell occurs. This degradation can be both recoverable and non-recoverable, depending on operation conditions and the system design.

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

High-energy side-peak emission of exciton-polariton condensates in high density regime

PubMed Central

Horikiri, Tomoyuki; Yamaguchi, Makoto; Kamide, Kenji; Matsuo, Yasuhiro; Byrnes, Tim; Ishida, Natsuko; Löffler, Andreas; Höfling, Sven; Shikano, Yutaka; Ogawa, Tetsuo; Forchel, Alfred; Yamamoto, Yoshihisa

2016-01-01

In a standard semiconductor laser, electrons and holes recombine via stimulated emission to emit coherent light, in a process that is far from thermal equilibrium. Exciton-polariton condensates–sharing the same basic device structure as a semiconductor laser, consisting of quantum wells coupled to a microcavity–have been investigated primarily at densities far below the Mott density for signatures of Bose-Einstein condensation. At high densities approaching the Mott density, exciton-polariton condensates are generally thought to revert to a standard semiconductor laser, with the loss of strong coupling. Here, we report the observation of a photoluminescence sideband at high densities that cannot be accounted for by conventional semiconductor lasing. This also differs from an upper-polariton peak by the observation of the excitation power dependence in the peak-energy separation. Our interpretation as a persistent coherent electron-hole-photon coupling captures several features of this sideband, although a complete understanding of the experimental data is lacking. A full understanding of the observations should lead to a development in non-equilibrium many-body physics. PMID:27193700

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE PAGES

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit; ...

2017-06-01

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Mode control in photonic crystal surface emitting lasers (PCSELs) through in-plane feedback (Conference Presentation)

NASA Astrophysics Data System (ADS)

Taylor, Richard J. E.; Li, Guangrui; Ivanov, Pavlo; Childs, David T. D.; Stevens, Ben J.; Babazadeh, Nasser; Ignatova, Olesya; Hogg, Richard A.

2017-02-01

All-semiconductor photonic crystal surface-emitting lasers (PCSELs) operating in CW mode at room temperature and coherently coupled arrays of these lasers are reviewed. These PCSELs are grown via MOVPE on GaAs substrates and include QW active elements and GaAs/InGaP photonic crystal (PC) layer situated above this active zone. Atoms of triangular shapes have been shown to increase optical power from the PCSEL but are also shown to result in a competition between lasing modes. Simulation shows that the energy splitting of lasing modes is smaller for triangular atoms, than for circles making high power single-mode devices difficult to achieve. In this work we experimentally investigate the effect of lateral optical feedback introduced by a facet cleave along one or two perpendicular PCSEL edges. This cleavage plane is misaligned to the PC resulting in a periodic variation of facet phase along the side of the device. Results confirm that a single cleave selects the lowest threshold 2D lasing mode, resulting in a 20% reduction in threshold current and favours single-mode emission. The addition of a second cleave at right-angles to the first has no significant effect upon threshold current. The virgin device is shown to have a symmetric far-field (1 degree) whilst a single cleave produces a 1 degree divergence perpendicular to cleave and 5 degree parallel to cleave. The second orthogonal cleave results in the far field becoming symmetric again but with a divergence angle of 1 degree indicating that single-mode lasing is supported over a wider area.

Nanowire–quantum-dot lasers on flexible membranes

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Ota, Yasutomo; Ishida, Satomi; Nishioka, Masao; Iwamoto, Satoshi; Arakawa, Yasuhiko

2018-06-01

We demonstrate lasing in a single nanowire with quantum dots as an active medium embedded on poly(dimethylsiloxane) membranes towards application in nanowire-based flexible nanophotonic devices. Nanowire laser structures with 50 quantum dots are grown on patterned GaAs(111)B substrates and then transferred from the as-grown substrates on poly(dimethylsiloxane) transparent flexible organosilicon membranes, by means of spin-casting and curing processes. We observe lasing oscillation in the transferred single nanowire cavity with quantum dots at 1.425 eV with a threshold pump pulse fluence of ∼876 µJ/cm2, which enables the realization of high-performance multifunctional NW-based flexible photonic devices.

Tunable optofluidic microring laser based on a tapered hollow core microstructured optical fiber.

PubMed

Li, Zhi-Li; Zhou, Wen-Yuan; Luo, Ming-Ming; Liu, Yan-Ge; Tian, Jian-Guo

2015-04-20

A tunable optofluidic microring dye laser within a tapered hollow core microstructured optical fiber was demonstrated. The fiber core was filled with a microfluidic gain medium plug and axially pumped by a nanosecond pulse laser at 532 nm. Strong radial emission and low-threshold lasing (16 nJ/pulse) were achieved. Lasing was achieved around the surface of the microfluidic plug. Laser emission was tuned by changing the liquid surface location along the tapered fiber. The possibility of developing a tunable laser within the tapered simplified hollow core microstructured optical fiber presents opportunities for developing liquid surface position sensors and biomedical analysis.

Monolithically Integrated High-β Nanowire Lasers on Silicon.

PubMed

Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

2016-01-13

Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

Semiconductor diode laser material and devices with emission in visible region of the spectrum

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.

1975-01-01

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Wrinkled 2D Materials: A Versatile Platform for Low-Threshold Stretchable Random Lasers.

PubMed

Hu, Han-Wen; Haider, Golam; Liao, Yu-Ming; Roy, Pradip Kumar; Ravindranath, Rini; Chang, Huan-Tsung; Lu, Cheng-Hsin; Tseng, Chang-Yang; Lin, Tai-Yung; Shih, Wei-Heng; Chen, Yang-Fang

2017-11-01

A stretchable, flexible, and bendable random laser system capable of lasing in a wide range of spectrum will have many potential applications in next- generation technologies, such as visible-spectrum communication, superbright solid-state lighting, biomedical studies, fluorescence, etc. However, producing an appropriate cavity for such a wide spectral range remains a challenge owing to the rigidity of the resonator for the generation of coherent loops. 2D materials with wrinkled structures exhibit superior advantages of high stretchability and a suitable matrix for photon trapping in between the hill and valley geometries compared to their flat counterparts. Here, the intriguing functionalities of wrinkled reduced graphene oxide, single-layer graphene, and few-layer hexagonal boron nitride, respectively, are utilized to design highly stretchable and wearable random laser devices with ultralow threshold. Using methyl-ammonium lead bromide perovskite nanocrystals (PNC) to illustrate the working principle, the lasing threshold is found to be ≈10 µJ cm -2 , about two times less than the lowest value ever reported. In addition to PNC, it is demonstrated that the output lasing wavelength can be tuned using different active materials such as semiconductor quantum dots. Thus, this study is very useful for the future development of high-performance wearable optoelectronic devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of laser diode otolaryngological intracavity procedures and its clinical practice

NASA Astrophysics Data System (ADS)

Wang, Qingguo; Mao, Haitao; Bu, Hongjian; Dong, Xingfa; Li, Jikai; Li, Fangzheng; Zhang, Wenqing

1998-08-01

Because laser is diffusely reflected by the skin as well as scattered and absorbed by the subcutaneous tissue, the lasing intensity which enters into the tissue through the skin is exponentially attenuated with the increase in the depth. Therefore, when the medium-small energy laser is transmitted to the tissue depth through the skin, the lasing intensity is quite finite. However, a lot of diseases occur in the crooked and narrow tube, sinus or deep tissue, for these diseases, it is difficult to get the curative effect by normal laser radiation. As above, we have developed an otolaryngological intracavity therapeutic apparatus of laser diode. Visible GaAlAs laser diode is adopted on this apparatus, its lasing wavelength is 670 nm. The lasing beam is guided into the crooked and narrow tube, sinus or deep tissue, which passes through the optical fiber and the laser pins of different forms and sizes (such as straight, curved and sidelight etc.). Using the fiber-optic connector the laser pins can be changed conveniently. The lasing output power of laser pin can be adjusted from 0 to 20 mW. The lasing intensity may be modulated which changes the rectangular wave form 0 to 1 kHz. Five hundred patients were suffering from 35 kind of otolaryngological diseases were treated in the period of clinical test. The rate of efficiency (cure or improvement) is 89%. Nobody had the side effect or deteriorated. This apparatus has the best curative effect on the inflammation of the mucosa and shallow tissue, such as auris media dropsy, maxillary sinus inflammation, auris external inflammation, chronic laryngitis, otitis media, tinnitus, vertigo, and so on.

Quantum Optoelectronics. Postconference Edition. Organization of the 1993 Photonics Science Topical Meetings Held in Palm Springs, California on March 17 - 19, 1993. Technical Digest Series, Volume 8

DTIC Science & Technology

1993-03-19

Experiments lasing thresholds in sub-half- noises and amplitude squeezing, R. F. Nabiev, E. L. Ginzton micron diameter microcavity VCSELs imply very low...phase noise characteristics of internal and output light of semiconductor laser with dispersive loss element inside the 9:00 am resonator is presented...subsequent emission events, resulting in a remarkable expansion of frequency range for the suppression of photon- number fluctuation noise beyond the inverse

Laser performance of Coumarin 540A dye molecules in polymeric host media with different viscosities: From liquid solution to solid polymer matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Costela, A.; Garcia-Moreno, I.; Barroso, J.

1998-01-01

Photophysical parameters and lasing properties of Coumarin 540A dye molecules are studied in solutions of increasing viscosity, from liquid solutions in 1,4-dioxane to solid solutions in poly(methyl methacrylate). The fluorescence quantum yield and lasing efficiencies decrease as the viscosity of the solution increases, reflecting the strong influence of the rigidity of the medium on the radiative processes. The photodegradation mechanisms acting on the fluorophores are analyzed by following the dependence of laser induced fluorescence and laser output on the number of pump laser pulses. The fluorescence redistribution after pattern photobleaching technique is used, and Fick{close_quote}s second law is applied tomore » study the diffusion of dye molecules in the highly viscous polymer solutions. The diffusion coefficients of the dye molecules as a function of the increased viscosity of the medium are determined. {copyright} {ital 1998 American Institute of Physics.}« less

Passively Q-switched dual-wavelength thulium-doped fiber laser based on a multimode interference filter and a semiconductor saturable absorber

NASA Astrophysics Data System (ADS)

Wang, M.; Huang, Y. J.; Ruan, S. C.

2018-04-01

In this paper, we have demonstrated a theta cavity passively Q-switched dual-wavelength fiber laser based on a multimode interference filter and a semiconductor saturable absorber. Relying on the properties of the fiber theta cavity, the laser can operate unidirectionally without an optical isolator. A semiconductor saturable absorber played the role of passive Q-switch while a section of single-mode-multimode-single-mode fiber structure served as an multimode interference filter and was used for selecting the lasing wavelengths. By suitably manipulating the polarization controller, stable dual-wavelength Q-switched operation was obtained at ~1946.8 nm and ~1983.8 nm with maximum output power and minimum pulse duration of ~47 mW and ~762.5 ns, respectively. The pulse repetition rate can be tuned from ~20.2 kHz to ~79.7 kHz by increasing the pump power from ~2.12 W to ~5.4 W.

A Nanowire-Based Plasmonic Quantum Dot Laser.

PubMed

Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2016-04-13

Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

Solar-pumped electronic-to-vibrational energy transfer lasers

NASA Technical Reports Server (NTRS)

Harries, W. L.; Wilson, J. W.

1981-01-01

The possibility of using solar-pumped lasers as solar energy converters is examined. The absorbing media considered are halogens or halogen compounds, which are dissociated to yield excited atoms, which then hand over energy to a molecular lasing medium. Estimates of the temperature effects for a Br2-CO2-He system with He as the cooling gas are given. High temperatures can cause the lower energy levels of the CO2 laser transition to be filled. The inverted populations are calculated and lasing should be possible. However, the efficiency is less than 0.001. Examination of other halogen-molecular lasant combinations (where the rate coefficients are known) indicate efficiencies in all cases of less than 0.005.

Optical gain in colloidal quantum dots achieved with direct-current electrical pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Jaehoon; Park, Young-Shin; Klimov, Victor Ivanovich

Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge—realization of lasing with electrical injection—remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here in this paper, we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, wemore » apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm -2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm -2 we achieve the population inversion of the band-edge states.« less

Optical gain in colloidal quantum dots achieved with direct-current electrical pumping

NASA Astrophysics Data System (ADS)

Lim, Jaehoon; Park, Young-Shin; Klimov, Victor I.

2018-01-01

Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge--realization of lasing with electrical injection--remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, we apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm-2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm-2 we achieve the population inversion of the band-edge states.

Optimized Spiral Metal-Gallium-Nitride Nanowire Cavity for Ultra-High Circular Dichroism Ultraviolet Lasing at Room Temperature.

PubMed

Liao, Wei-Chun; Liao, Shu-Wei; Chen, Kuo-Ju; Hsiao, Yu-Hao; Chang, Shu-Wei; Kuo, Hao-Chung; Shih, Min-Hsiung

2016-05-25

Circularly polarized laser sources with small footprints and high efficiencies can possess advanced functionalities in optical communication and biophotonic integrated systems. However, the conventional lasers with additional circular-polarization converters are bulky and hardly compatible with nanophotonic circuits, and most active chiral plasmonic nanostructures nowadays exhibit broadband emission and low circular dichroism. In this work, with spirals of gallium nitride (GaN) nanowires (NWRs) covered by a metal layer, we demonstrated an ultrasmall semiconductor laser capable of emitting circularly-polarized photons. The left- and right-hand spiral metal nanowire cavities with varied periods were designed at ultraviolet wavelengths to achieve the high quality factor circular dichroism metastructures. The dissymmetry factors characterizing the degrees of circular polarizations of the left- and right-hand chiral lasers were 1.4 and -1.6 (±2 if perfectly circular polarized), respectively. The results show that the chiral cavities with only 5 spiral periods can achieve lasing signals with the high degrees of circular polarizations.

Optical gain in colloidal quantum dots achieved with direct-current electrical pumping

DOE PAGES

Lim, Jaehoon; Park, Young-Shin; Klimov, Victor Ivanovich

2017-11-20

Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge—realization of lasing with electrical injection—remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here in this paper, we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, wemore » apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm -2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm -2 we achieve the population inversion of the band-edge states.« less

A low-threshold nanolaser based on hybrid plasmonic waveguides at the deep subwavelength scale

NASA Astrophysics Data System (ADS)

Li, Zhi-Quan; Piao, Rui-Qi; Zhao, Jing-Jing; Meng, Xiao-Yun; Tong, Kai

2015-07-01

A novel nanolaser structure based on a hybrid plasmonic waveguide is proposed and investigated. The coupling between the metal nanowire and the high-index semiconductor nanowire with optical gain leads to a strong field enhancement in the air gap region and low propagation loss, which enables the realization of lasing at the deep subwavelength scale. By optimizing the geometric parameters of the structure, a minimal lasing threshold is achieved while maintaining the capacity of ultra-deep subwavelength mode confinement. Compared with the previous coupled nanowire pair based hybrid plasmonic structure, a lower threshold can be obtained with the same geometric parameters. The proposed nanolaser can be integrated into a miniature chip as a nanoscale light source and has the potential to be widely used in optical communication and optical sensing technology. Project supported by the National Natural Science Foundation of China (Grant No. 61172044) and the Natural Science Foundation of Hebei Province, China (Grant No. F2014501150).

Coupling effects in the modal emission of colloidal quantum dot microdisk lasers.

NASA Astrophysics Data System (ADS)

Lafalce, Evan; Zheng, Qingji; Lin, Chunhao; Smith, Marcus; Malak, Sidney; Jung, Jaehan; Yoon, Young; Lin, Zhiqun; Tsukruk, Vladimir; Vardeny, Z. Valy

Solution-processed semiconductors such as colloidal quantum dots (CQD) are particularly suited materials for monolithic fabrication of laser microstructures because of their ease of fabrication and compatibility with conventional lithographic techniques. We use the functionality of core/alloyed-shell CQDs to fabricate microdisk lasers of variable size and study the resulting whispering-gallery mode laser emission. In particular we study the effects of near-field coupling on resonant modes of pairs of these lasers with sub-micrometer spacing. We demonstrate the occurrence of lasing modes that originate from the interaction between two such microdisks by means of varying the spatial distribution and magnitude of the gain and loss in the coupled-pair. The transition from emission of modes localized on a single disk to those of the interacting pair is accompanied by coalescence of eigen-frequencies and pump-induced turn-off of lasing, highlighting the role of parity-time symmetry and exceptional point physics. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

Lasing action from photonic bound states in continuum

NASA Astrophysics Data System (ADS)

Kodigala, Ashok; Lepetit, Thomas; Gu, Qing; Bahari, Babak; Fainman, Yeshaiahu; Kanté, Boubacar

2017-01-01

In 1929, only three years after the advent of quantum mechanics, von Neumann and Wigner showed that Schrödinger’s equation can have bound states above the continuum threshold. These peculiar states, called bound states in the continuum (BICs), manifest themselves as resonances that do not decay. For several decades afterwards the idea lay dormant, regarded primarily as a mathematical curiosity. In 1977, Herrick and Stillinger revived interest in BICs when they suggested that BICs could be observed in semiconductor superlattices. BICs arise naturally from Feshbach’s quantum mechanical theory of resonances, as explained by Friedrich and Wintgen, and are thus more physical than initially realized. Recently, it was realized that BICs are intrinsically a wave phenomenon and are thus not restricted to the realm of quantum mechanics. They have since been shown to occur in many different fields of wave physics including acoustics, microwaves and nanophotonics. However, experimental observations of BICs have been limited to passive systems and the realization of BIC lasers has remained elusive. Here we report, at room temperature, lasing action from an optically pumped BIC cavity. Our results show that the lasing wavelength of the fabricated BIC cavities, each made of an array of cylindrical nanoresonators suspended in air, scales with the radii of the nanoresonators according to the theoretical prediction for the BIC mode. Moreover, lasing action from the designed BIC cavity persists even after scaling down the array to as few as 8-by-8 nanoresonators. BIC lasers open up new avenues in the study of light-matter interaction because they are intrinsically connected to topological charges and represent natural vector beam sources (that is, there are several possible beam shapes), which are highly sought after in the fields of optical trapping, biological sensing and quantum information.

Explosively pumped laser light

DOEpatents

Piltch, Martin S.; Michelotti, Roy A.

1991-01-01

A single shot laser pumped by detonation of an explosive in a shell casing. The shock wave from detonation of the explosive causes a rare gas to luminesce. The high intensity light from the gas enters a lasing medium, which thereafter outputs a pulse of laser light to disable optical sensors and personnel.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akparov, V V; Dmitriev, Valentin G; Duraev, V P

A semiconductor ring laser (SRL) with a radiation wavelength of 1540 nm and a fibre ring cavity is developed and studied in several main lasing regimes. An SRL design based on a semiconductor optical travelling-wave amplifier and a ring cavity, composed of a single-mode polarisation-maintaining fibre, is considered. The SRL is studied in the regime of a rotation speed sensor, in which the frequency shift of counterpropagating waves in the SRL is proportional to its rotation speed. The minimum rotation speed that can be detected using the SRL under consideration depends on the cavity length; in our experiment it turnedmore » to be 1deg s{sup -1}. The changes in the threshold current, emission spectrum, and fundamental radiation wavelength upon closing and opening the SRL ring cavity and with a change in its radius are also investigated. (lasers)« less

Delay feedback induces a spontaneous motion of two-dimensional cavity solitons in driven semiconductor microcavities

NASA Astrophysics Data System (ADS)

Tlidi, M.; Averlant, E.; Vladimirov, A.; Panajotov, K.

2012-09-01

We consider a broad area vertical-cavity surface-emitting laser (VCSEL) operating below the lasing threshold and subject to optical injection and time-delayed feedback. We derive a generalized delayed Swift-Hohenberg equation for the VCSEL system, which is valid close to the nascent optical bistability. We first characterize the stationary-cavity solitons by constructing their snaking bifurcation diagram and by showing clustering behavior within the pinning region of parameters. Then, we show that the delayed feedback induces a spontaneous motion of two-dimensional (2D) cavity solitons in an arbitrary direction in the transverse plane. We characterize moving cavity solitons by estimating their threshold and calculating their velocity. Numerical 2D solutions of the governing semiconductor laser equations are in close agreement with those obtained from the delayed generalized Swift-Hohenberg equation.

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

PubMed Central

2012-01-01

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device. PMID:23009105

The analytical approach to optimization of active region structure of quantum dot laser

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

2014-10-01

Using the analytical approach introduced in our previous papers we analyse the possibilities of optimization of size and structure of active region of semiconductor quantum dot lasers emitting via ground-state optical transitions. It is shown that there are optimal length' dispersion and number of QD layers in laser active region which allow one to obtain lasing spectrum of a given width at minimum injection current. Laser efficiency corresponding to the injection current optimized by the cavity length is practically equal to its maximum value.

Injection current minimization of InAs/InGaAs quantum dot laser by optimization of its active region and reflectivity of laser cavity edges

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Maximov, M. V.

2015-11-01

The ways to optimize key parameters of active region and edge reflectivity of edge- emitting semiconductor quantum dot laser are provided. It is shown that in the case of optimal cavity length and sufficiently large dispersion lasing spectrum of a given width can be obtained at injection current up to an order of magnitude lower in comparison to non-optimized sample. The influence of internal loss and edge reflection is also studied in details.

Quantum many-body correlations in collective phonon-excitations

NASA Astrophysics Data System (ADS)

Droenner, Leon; Kabuss, Julia; Carmele, Alexander

2018-02-01

We present a theoretical study of a many-emitter phonon laser based on optically driven semiconductor quantum dots placed within an acoustic nanocavity. A transformation of the phonon laser Hamiltonian leads to a Tavis-Cummings type interaction with an unexpected additional many-emitter energy shift. This many-emitter interaction with the cavity mode results in a variety of phonon resonances which dependent strongly on the number of participating emitters. These collective resonances show the highest phonon output. Furthermore, we show that the output can be increased even more via lasing at the two phonon resonance.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

1991-01-01

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

Stable L-band multi-wavelength SOA fiber laser based on polarization rotation.

PubMed

Liu, Tonghui; Jia, Dongfang; Yang, Tianxin; Wang, Zhaoying; Liu, Ying

2017-04-01

We propose and experimentally demonstrate a stable multi-wavelength fiber ring laser operating in the L-band with wavelength spacing of 25 GHz. The mechanism is induced by a polarization rotation intensity equalizer consisting of a semiconductor optical amplifier and polarization devices. A Fabry-Perot filter is inserted into the cavity to serve as a multi-wavelength selection device. Stable L-band multi-wavelength lasing with 3 dB uniformity of 21.2 nm, and simultaneous oscillation of 101 lines with wavelength spacing of 25 GHz, is obtained.

Quantum dot SOA/silicon external cavity multi-wavelength laser.

PubMed

Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

2015-02-23

We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

Tunable multiwavelength SOA fiber laser with ultra-narrow wavelength spacing based on nonlinear polarization rotation.

PubMed

Zhang, Zuxing; Wu, Jian; Xu, Kun; Hong, Xiaobin; Lin, Jintong

2009-09-14

A tunable multiwavelength fiber laser with ultra-narrow wavelength spacing and large wavelength number using a semiconductor optical amplifier (SOA) has been demonstrated. Intensity-dependent transmission induced by nonlinear polarization rotation in the SOA accounts for stable multiwavelength operation with wavelength spacing less than the homogenous broadening linewidth of the SOA. Stable multiwavelength lasing with wavelength spacing as small as 0.08 nm and wavelength number up to 126 is achieved at room temperature. Moreover, wavelength tuning of 20.2 nm is implemented via polarization tuning.

NONLINEAR AND FIBER OPTICS: Transient stimulated thermal scattering in a field of quasiplanar counterpropagating pump beams

NASA Astrophysics Data System (ADS)

Arutyunov, Yu A.; Bagan, A. A.; Gerasimov, V. B.; Golyanov, A. V.; Ogluzdin, Valerii E.; Sugrobov, V. A.; Khizhnyak, A. I.

1990-04-01

Theoretical analyses and experimental studies are made of transient stimulated thermal scattering in a thermal nonlinear medium subjected to a field of counterpropagating quasiplane waves. The equations for the counterpropagating four-beam interaction are solved analytically for pairwise counterpropagating scattered waves using the constant pump wave intensity approximation. The conditions for the occurrence of an absolute instability of the scattered waves are determined and the angular dependence of their increment is obtained; these results are in good agreement with experimental data. An investigation is reported of the dynamics of spiky lasing in a laser with resonators coupled by a dynamic hologram in which stimulated thermal scattering is a source of radiation initiating lasing in the system as a whole.

Light scattering and random lasing in aqueous suspensions of hexagonal boron nitride nanoflakes

NASA Astrophysics Data System (ADS)

O'Brien, S. A.; Harvey, A.; Griffin, A.; Donnelly, T.; Mulcahy, D.; Coleman, J. N.; Donegan, J. F.; McCloskey, D.

2017-11-01

Liquid phase exfoliation allows large scale production of 2D materials in solution. The particles are highly anisotropic and strongly scatter light. While spherical particles can be accurately and precisely described by a single parameter—the radius, 2D nanoflakes, however, cannot be so easily described. We investigate light scattering in aqueous solutions of 2D hexagonal boron nitride nanoflakes in the single and multiple scattering regimes. In the single scattering regime, the anisotropic 2D materials show a much stronger depolarization of light when compared to spherical particles of similar size. In the multiple scattering regime, the scattering as a function of optical path for hexagonal boron nitride nanoflakes of a given lateral length was found to be qualitatively equivalent to scattering from spheres with the same diameter. We also report the presence of random lasing in high concentration suspensions of aqueous h-BN mixed with Rhodamine B dye. The h-BN works as a scattering agent and Rhodamine B as a gain medium for the process. We observed random lasing at 587 nm with a threshold energy of 0.8 mJ.

Light scattering and random lasing in aqueous suspensions of hexagonal boron nitride nanoflakes.

PubMed

O'Brien, S A; Harvey, A; Griffin, A; Donnelly, T; Mulcahy, D; Coleman, J N; Donegan, J F; McCloskey, D

2017-11-24

Liquid phase exfoliation allows large scale production of 2D materials in solution. The particles are highly anisotropic and strongly scatter light. While spherical particles can be accurately and precisely described by a single parameter-the radius, 2D nanoflakes, however, cannot be so easily described. We investigate light scattering in aqueous solutions of 2D hexagonal boron nitride nanoflakes in the single and multiple scattering regimes. In the single scattering regime, the anisotropic 2D materials show a much stronger depolarization of light when compared to spherical particles of similar size. In the multiple scattering regime, the scattering as a function of optical path for hexagonal boron nitride nanoflakes of a given lateral length was found to be qualitatively equivalent to scattering from spheres with the same diameter. We also report the presence of random lasing in high concentration suspensions of aqueous h-BN mixed with Rhodamine B dye. The h-BN works as a scattering agent and Rhodamine B as a gain medium for the process. We observed random lasing at 587 nm with a threshold energy of 0.8 mJ.

Photonic Molecule Lasers Revisited

NASA Astrophysics Data System (ADS)

Gagnon, Denis; Dumont, Joey; Déziel, Jean-Luc; Dubé, Louis J.

2014-05-01

Photonic molecules (PMs) formed by coupling two or more optical resonators are ideal candidates for the fabrication of integrated microlasers, photonic molecule lasers. Whereas most calculations on PM lasers have been based on cold-cavity (passive) modes, i.e. quasi-bound states, a recently formulated steady-state ab initio laser theory (SALT) offers the possibility to take into account the spectral properties of the underlying gain transition, its position and linewidth, as well as incorporating an arbitrary pump profile. We will combine two theoretical approaches to characterize the lasing properties of PM lasers: for two-dimensional systems, the generalized Lorenz-Mie theory will obtain the resonant modes of the coupled molecules in an active medium described by SALT. Not only is then the theoretical description more complete, the use of an active medium provides additional parameters to control, engineer and harness the lasing properties of PM lasers for ultra-low threshold and directional single-mode emission. We will extend our recent study and present new results for a number of promising geometries. The authors acknowledge financial support from NSERC (Canada) and the CERC in Photonic Innovations of Y. Messaddeq.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor); Lowenthal, Mark David (Inventor); Shotton, Neil O. (Inventor)

2014-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Blanchard, Richard A. (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor)

2012-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

One-dimensional polaritons with size-tunable and enhanced coupling strengths in semiconductor nanowires.

PubMed

van Vugt, Lambert K; Piccione, Brian; Cho, Chang-Hee; Nukala, Pavan; Agarwal, Ritesh

2011-06-21

Strong coupling of light with excitons in direct bandgap semiconductors leads to the formation of composite photonic-electronic quasi-particles (polaritons), in which energy oscillates coherently between the photonic and excitonic states with the vacuum Rabi frequency. The light-matter coherence is maintained until the oscillator dephases or the photon escapes. Exciton-polariton formation has enabled the observation of Bose-Einstein condensation in the solid-state, low-threshold polariton lasing and is also useful for terahertz and slow-light applications. However, maintaining coherence for higher carrier concentration and temperature applications still requires increased coupling strengths. Here, we report on size-tunable, exceptionally high exciton-polariton coupling strengths characterized by a vacuum Rabi splitting of up to 200 meV as well as a reduction in group velocity, in surface-passivated, self-assembled semiconductor nanowire cavities. These experiments represent systematic investigations on light-matter coupling in one-dimensional optical nanocavities, demonstrating the ability to engineer light-matter coupling strengths at the nanoscale, even in non-quantum-confined systems, to values much higher than in bulk.

One-dimensional polaritons with size-tunable and enhanced coupling strengths in semiconductor nanowires

PubMed Central

van Vugt, Lambert K.; Piccione, Brian; Cho, Chang-Hee; Nukala, Pavan; Agarwal, Ritesh

2011-01-01

Strong coupling of light with excitons in direct bandgap semiconductors leads to the formation of composite photonic-electronic quasi-particles (polaritons), in which energy oscillates coherently between the photonic and excitonic states with the vacuum Rabi frequency. The light-matter coherence is maintained until the oscillator dephases or the photon escapes. Exciton-polariton formation has enabled the observation of Bose-Einstein condensation in the solid-state, low-threshold polariton lasing and is also useful for terahertz and slow-light applications. However, maintaining coherence for higher carrier concentration and temperature applications still requires increased coupling strengths. Here, we report on size-tunable, exceptionally high exciton-polariton coupling strengths characterized by a vacuum Rabi splitting of up to 200 meV as well as a reduction in group velocity, in surface-passivated, self-assembled semiconductor nanowire cavities. These experiments represent systematic investigations on light-matter coupling in one-dimensional optical nanocavities, demonstrating the ability to engineer light-matter coupling strengths at the nanoscale, even in non-quantum-confined systems, to values much higher than in bulk. PMID:21628582

Intensity fluctuations in bimodal micropillar lasers enhanced by quantum-dot gain competition

NASA Astrophysics Data System (ADS)

Leymann, H. A. M.; Hopfmann, C.; Albert, F.; Foerster, A.; Khanbekyan, M.; Schneider, C.; Höfling, S.; Forchel, A.; Kamp, M.; Wiersig, J.; Reitzenstein, S.

2013-05-01

We investigate correlations between orthogonally polarized cavity modes of a bimodal micropillar laser with a single layer of self-assembled quantum dots in the active region. While one emission mode of the microlaser demonstrates a characteristic S-shaped input-output curve, the output intensity of the second mode saturates and even decreases with increasing injection current above threshold. Measuring the photon autocorrelation function g(2)(τ) of the light emission confirms the onset of lasing in the first mode with g(2)(0) approaching unity above threshold. In contrast, strong photon bunching associated with superthermal values of g(2)(0) is detected for the other mode for currents above threshold. This behavior is attributed to gain competition of the two modes induced by the common gain material, which is confirmed by photon cross-correlation measurements revealing a clear anticorrelation between emission events of the two modes. The experimental studies are in qualitative agreement with theoretical studies based on a microscopic semiconductor theory, which we extend to the case of two modes interacting with the common gain medium. Moreover, we treat the problem by a phenomenological birth-death model extended to two interacting modes, which reveals that the photon probability distribution of each mode has a double-peak structure, indicating switching behavior of the modes for pump rates around threshold.

Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Liefeng, E-mail: fengliefeng@tju.edu.cn, E-mail: lihongru@nankai.edu.cn; Yang, Xiufang; Wang, Cunda

2015-04-15

The junction behavior of different narrow band-gap multi-quantum-well (MQW) laser diodes (LDs) confirmed that the jump in the junction voltage in the threshold region is a general characteristic of narrow band-gap LDs. The relative change in the 1310 nm LD is the most obvious. To analyze this sudden voltage change, the threshold region is divided into three stages by I{sub th}{sup l} and I{sub th}{sup u}, as shown in Fig. 2; I{sub th}{sup l} is the conventional threshold, and as long as the current is higher than this threshold, lasing exists and the IdV/dI-I plot drops suddenly; I{sub th}{sup u}more » is the steady lasing point, at which the separation of the quasi-Fermi levels of electron and holes across the active region (V{sub j}) is suddenly pinned. Based on the evolutionary model of dissipative structure theory, the rate equations of the photons in a single-mode LD were deduced in detail at I{sub th}{sup l} and I{sub th}{sup u}. The results proved that the observed behavior of stimulated emission suddenly substituting for spontaneous emission, in a manner similar to biological evolution, must lead to a sudden increase in the injection carriers in the threshold region, which then causes the sudden increase in the junction voltage in this region.« less

Mechanism for pumping lasers with squeezed light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haake, F.; Walls, D.F.; Collett, M.J.

1989-03-15

In this paper we demonstrate how the squeezed-pump-laser model of Marte and Walls (Phys. Rev. A 37, 1235 (1988)) may be realized in practice. We consider a three-level atomic medium interacting with two cavity modes pumped with squeezed light. We show that this pumping mechanism both achieves atomic inversion and squeezes the fluctuations on the lasing transition.

Coaxial short pulsed laser

DOEpatents

Nelson, M.A.; Davies, T.J.

1975-08-01

This invention relates to a laser system of rugged design suitable for use in a field environment. The laser itself is of coaxial design with a solid potting material filling the space between components. A reservoir is employed to provide a gas lasing medium between an electrode pair, each of which is connected to one of the coaxial conductors. (auth)

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

NASA Astrophysics Data System (ADS)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

A semiconductor nanowire Josephson junction microwave laser

NASA Astrophysics Data System (ADS)

Cassidy, Maja; Uilhoorn, Willemijn; Kroll, James; de Jong, Damaz; van Woerkom, David; Nygard, Jesper; Krogstrup, Peter; Kouwenhoven, Leo

We present measurements of microwave lasing from a single Al/InAs/Al nanowire Josephson junction strongly coupled to a high quality factor superconducting cavity. Application of a DC bias voltage to the Josephson junction results in photon emission into the cavity when the bias voltage is equal to a multiple of the cavity frequency. At large voltage biases, the strong non-linearity of the circuit allows for efficient down conversion of high frequency microwave photons down to multiple photons at the fundamental frequency of the cavity. In this regime, the emission linewidth narrows significantly below the bare cavity linewidth to < 10 kHz and real time analysis of the emission statistics shows above threshold lasing with a power conversion efficiency > 50%. The junction-cavity coupling and laser emission can be tuned rapidly via an external gate, making it suitable to be integrated into a scalable qubit architecture as a versatile source of coherent microwave radiation. This work has been supported by the Netherlands Organisation for Scientific Research (NWO/OCW), Foundation for Fundamental Research on Matter (FOM), European Research Council (ERC), and Microsoft Corporation Station Q.

NONLINEAR OPTICAL PHENOMENA Intracavity SRS conversion in diode-pumpedmultifunctional Nd3+:SrMoO4 laser crystal

NASA Astrophysics Data System (ADS)

Basiev, Tasoltan T.; Smetanin, Sergei N.; Fedin, Aleksandr V.; Shurygin, Anton S.

2010-10-01

Lasing of a miniature all-solid-state SRS laser based on a Nd3+:SrMoO4 crystal with a LiF:F2--passive Q-switch is studied. The dependences of the laser and SRS self-conversion parameters on the initial transmission of the passive Q-switch are studied experimentally and theoretically. Simulation of the lasing kinetics has shown the possibility of nonlinear cavity dumping upon highly efficient SRS self-conversion of laser radiation. An increase in the active medium length from 1 to 3mm resulted in an increase in the energy of the output 1.17-μm SRS radiation from 20 μJ to record-high 60 μJ at the absorbed multimode diode pump energy of 3.7 mJ.

Random lasing from Rhodamine 6G doped ethanediol solution based on the cicada wing nanocones

NASA Astrophysics Data System (ADS)

Zhang, Hua; Feng, Guoying; Zhang, Hong; Yang, Chao; Yin, Jiajia; Dai, Shenyu; Zhou, Shouhuan

2016-06-01

Random lasing from Rhdomaine 6G (Rh6G) doped ethanediol solution based on the cicada wing nanostructures as scatterers has been demonstrated. The optical positive feedback of the random laser is provided by these nanocones on the cicada wing, where the scale of the nanocones and the distance between them is about 150 nm and 200 nm, respectively. Al-coated reflector has been introduced to reduce the loss of the pump energy from the bottom, and moreover lower the laser threshold, which is about 126.0 μJ/pulse. Due to the liquid gain medium, the lifetime of this random laser is longer than conventional random lasers. This random laser shows the potential applications in biological random laser and photonic devices.

Organic holographic polymer dispersed liquid crystal distributed feedback laser from different diffraction orders

NASA Astrophysics Data System (ADS)

Liu, Minghuan; Liu, Yonggang; Zhang, Guiyang; Peng, Zenghui; Li, Dayu; Ma, Ji; Xuan, Li

2016-11-01

Holographic polymer dispersed liquid crystal (HPDLC) based distributed feedback (DFB) lasers were prepared with poly (-methoxy-5-(2‧-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) film as the active medium layer. The HPDLC grating film was fabricated via holographic induced photopolymerization. The pure film spectra of MEH-PPV and the amplified spontaneous emission (ASE) spectrum were investigated. The laser device was single-longitudinal mode operation. The tunability of the HPDLC DFB laser was achieved by selecting different grating periods. The lasing performances were also characterized and compared from different diffraction orders. The lasing threshold increased with the diffraction order and the third order laser possessed the largest conversion efficiency in this device. The experimental results were in good agreement with the theoretical calculations.

Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers

NASA Astrophysics Data System (ADS)

Arslan, Seval; Demir, Abdullah; Şahin, Seval; Aydınlı, Atilla

2018-02-01

In semiconductor lasers, quantum well intermixing (QWI) with high selectivity using dielectrics often results in lower quantum efficiency. In this paper, we report on an investigation regarding the effect of thermally induced dielectric stress on the quantum efficiency of quantum well structures in impurity-free vacancy disordering (IFVD) process using photoluminescence and device characterization in conjunction with microscopy. SiO2 and Si x O2/SrF2 (versus SrF2) films were employed for the enhancement and suppression of QWI, respectively. Large intermixing selectivity of 75 nm (125 meV), consistent with the theoretical modeling results, with negligible effect on the suppression region characteristics, was obtained. Si x O2 layer compensates for the large thermal expansion coefficient mismatch of SrF2 with the semiconductor and mitigates the detrimental effects of SrF2 without sacrificing its QWI benefits. The bilayer dielectric approach dramatically improved the dielectric-semiconductor interface quality. Fabricated high power semiconductor lasers demonstrated high quantum efficiency in the lasing region using the bilayer dielectric film during the intermixing process. Our results reveal that stress engineering in IFVD is essential and the thermal stress can be controlled by engineering the dielectric strain opening new perspectives for QWI of photonic devices.

Reduction of B-integral accumulation in lasers

DOEpatents

Meyerhofer, David D.; Konoplev, Oleg A.

2000-01-01

A pulsed laser is provided wherein the B-integral accumulated in the laser pulse is reduced using a semiconductor wafer. A laser pulse is generated by a laser pulse source. The laser pulse passes through a semiconductor wafer that has a negative nonlinear index of refraction. Thus, the laser pulse accumulates a negative B-integral. The laser pulse is then fed into a laser amplification medium, which has a positive nonlinear index of refraction. The laser pulse may make a plurality of passes through the laser amplification medium and accumulate a positive B-integral during a positive non-linear phase change. The semiconductor and laser pulse wavelength are chosen such that the negative B-integral accumulated in the semiconductor wafer substantially cancels the positive B-integral accumulated in the laser amplification medium. There may be additional accumulation of positive B-integral if the laser pulse passes through additional optical mediums such as a lens or glass plates. Thus, the effects of self-phase modulation in the laser pulse are substantially reduced.

Solvent-free fluidic organic dye lasers.

PubMed

Choi, Eun Young; Mager, Loic; Cham, Tran Thi; Dorkenoo, Kokou D; Fort, Alain; Wu, Jeong Weon; Barsella, Alberto; Ribierre, Jean-Charles

2013-05-06

We report on the demonstration of liquid organic dye lasers based on 9-(2-ethylhexyl)carbazole (EHCz), so-called liquid carbazole, doped with green- and red-emitting laser dyes. Both waveguide and Fabry-Perot type microcavity fluidic organic dye lasers were prepared by capillary action under solvent-free conditions. Cascade Förster-type energy transfer processes from liquid carbazole to laser dyes were employed to achieve color-variable amplified spontaneous emission and lasing. Overall, this study provides the first step towards the development of solvent-free fluidic organic semiconducting lasers and demonstrates a new kind of optoelectronic applications for liquid organic semiconductors.

Experimental demonstration of monolithically integrated 16 channel DFB laser array fabricated by nanoimprint lithography with AWG multiplexer and SOA for WDM-PON application

NASA Astrophysics Data System (ADS)

Zhao, Jianyi; Chen, Xin; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen

2015-03-01

A 16-channel monolithically integrated distributed feedback (DFB) laser array with arrayed waveguide gratings (AWGs) multiplexer and semiconductor optical amplifier (SOA) has been fabricated using nanoimprint technology. Selective lasing wavelength with 200 GHz frequency space has been obtained. The typical threshold current is between 20 mA and 30 mA. The output power is higher than 1 mW with 350 mA current in SOA. The side mode suppression ratio (SMSR) of the spectrum is better than 40 dB.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Two-stage liquid phase epitaxy for fabrication of buried InGaAsP/InP heterostructures

NASA Astrophysics Data System (ADS)

Procházková, O.; Novotný, J.; Šrobár, F.

1988-11-01

The technology of growth of buried heterojunction lasers emitting at 1.3 μm and some of their physical properties are described. Mesa stripes 8-μm wide were formed on heteroepitaxial wafers grown by liquid phase epitaxy at 630°C. They were buried by a second process at a lower temperature (590°C). The threshold current was about 100 mA and the temperature sensitivity was characterized by a parameter amounting to about 60 K. Single-mode lasing was observed occasionally.

Integrated injection-locked semiconductor diode laser

DOEpatents

Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

1991-02-19

A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

Semiconductor light sources for near- and mid-infrared spectral ranges

NASA Astrophysics Data System (ADS)

Karachinsky, L. Ya; Babichev, A. V.; Gladyshev, A. G.; Denisov, D. V.; Filimonov, A. V.; Novikov, I. I.; Egorov, A. Yu

2017-11-01

1550 nm band wafer-fused vertical-cavity surface-emitting lasers (VCSELs) and 5-10 μm band multi-stages quantum-cascade lasers (QCL) grown by molecular beam epitaxy (MBE) were fabricated and studied. VCSELs show high output optical power up to 6 mW in single-mode regime (SMSR > 40 dB) and open-eye diagrams at 30 Gbps of standard NRZ at 20°C. QCL heterostructures show high structural quality (fluctuations of composition and thickness < 1%). 20-μm-stripe width QCLs mounted on copper heatsinks show lasing at ∼ 6, 7.5 and 9 μm.

Semiconductor-based optical refrigerator

DOEpatents

Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

2002-01-01

Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

Tunable semiconductor lasers

NASA Technical Reports Server (NTRS)

Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

2006-01-01

Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

Conjugated polymer-titania nanoparticle hybrid films: random lasing action and ultrasensitive detection of explosive vapors.

PubMed

Deng, Changmin; He, Qingguo; He, Chao; Shi, Liqi; Cheng, Jiangong; Lin, Tong

2010-04-08

We have first demonstrated that a random laser action generated by a hybrid film composed of a semiconducting organic polymer (SOP) and TiO(2) nanoparticles can be used to detect 2,4,6-trinitrotoluene (TNT) vapors. The hybrid film was fabricated by spin-casting SOP solution dispersed with nanosized TiO(2) particles on quartz glass. The SOP in the hybrid film functioned as both the gain medium and the sensory transducer. A random lasing action was observed with a certain pump power when the size (diameter of 50 nm) and concentration (8.9 x 10(12)/cm(3)) of TiO(2) nanoparticles were optimized. Measurements of fluorescence quenching behavior of the hybrid film in TNT vapor atmosphere (10 ppb) showed that attenuated lasing in optically pumped hybrid film displayed a sensitivity to vapors of explosives more than 20 times higher than was observed from spontaneous emission. This phenomenon has been explained with the four-level laser model. Since the sensory transducer used in the hybrid polymer/nanoparticles system could be replaced by other functional materials, the concept developed could be extended to more general domains of chemical or environment detection.

Key techniques for space-based solar pumped semiconductor lasers

NASA Astrophysics Data System (ADS)

He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

2014-12-01

In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

Photophysical properties, photodegradation characteristics, and lasing action for coumarin dye C540A in polymeric media

NASA Astrophysics Data System (ADS)

Jones, Guilford, II; Huang, Zhennian; Pacheco, Dennis P., Jr.; Russell, Jeffrey A.

2004-07-01

Tunable solid-state dye lasers operating in the blue-green spectral region are attractive for a variety of applications. An important consideration in assessing the viability of this technology is the service life of the gain medium, which is presently limited by dye photodegradation. In this study, solid polymeric samples consisting of the coumarin dye C540A in modified PMMA were subjected to controlled photodegradation tests. The excitation laser was a flashlamp-pumped dye laser operating at 440 nm with a pulse duration of 1 μs. A complementary set of data was obtained for dye in solution phase for comparison purposes. Photophysical properties of C540A in water solution of polymethacrylic acid (PMAA) have been investigated with a view to assess the suitability of the sequestering polymer (PMAA) as an effective additive to facilitate use of a water medium for highly efficient blue-green dye lasers. Lasing action of C540A in aqueous PMAA has been realized using flashlamp-pumped laser system, yielding excellent laser efficiencies superior to that achieved in ethanolic solutions with the same dye. Laser characterization of dye in media included measurement of laser threshold, slope efficiency, pulse duration and output wavelength.

All optical mode controllable Er-doped random fiber laser with distributed Bragg gratings.

PubMed

Zhang, W L; Ma, R; Tang, C H; Rao, Y J; Zeng, X P; Yang, Z J; Wang, Z N; Gong, Y; Wang, Y S

2015-07-01

An all-optical method to control the lasing modes of Er-doped random fiber lasers (RFLs) is proposed and demonstrated. In the RFL, an Er-doped fiber (EDF) recoded with randomly separated fiber Bragg gratings (FBG) is used as the gain medium and randomly distributed reflectors, as well as the controllable element. By combining random feedback of the FBG array and Fresnel feedback of a cleaved fiber end, multi-mode coherent random lasing is obtained with a threshold of 14 mW and power efficiency of 14.4%. Moreover, a laterally-injected control light is used to induce local gain perturbation, providing additional gain for certain random resonance modes. As a result, active mode selection of the RFL is realized by changing locations of the laser cavity that is exposed to the control light.

A high-power fiber-coupled semiconductor light source with low spatio-temporal coherence

NASA Astrophysics Data System (ADS)

Schittko, Robert; Mazurenko, Anton; Tai, M. Eric; Lukin, Alexander; Rispoli, Matthew; Menke, Tim; Kaufman, Adam M.; Greiner, Markus

2017-04-01

Interference-induced distortions pose a significant challenge to a variety of experimental techniques, ranging from full-field imaging applications in biological research to the creation of optical potentials in quantum gas microscopy. Here, we present a design of a high-power, fiber-coupled semiconductor light source with low spatio-temporal coherence that bears the potential to reduce the impact of such distortions. The device is based on an array of non-lasing semiconductor emitters mounted on a single chip whose optical output is coupled into a multi-mode fiber. By populating a large number of fiber modes, the low spatial coherence of the input light is further reduced due to the differing optical path lengths amongst the modes and the short coherence length of the light. In addition to theoretical calculations showcasing the feasibility of this approach, we present experimental measurements verifying the low degree of spatial coherence achievable with such a source, including a detailed analysis of the speckle contrast at the fiber end. We acknowledge support from the National Science Foundation, the Gordon and Betty Moore Foundation's EPiQS Initiative, an Air Force Office of Scientific Research MURI program and an Army Research Office MURI program.

Gain-assisted broadband ring cavity enhanced spectroscopy

NASA Astrophysics Data System (ADS)

Selim, Mahmoud A.; Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

2017-02-01

Incoherent broadband cavity enhanced spectroscopy can significantly increase the effective path length of light-matter interaction to detect weak absorption lines over broad spectral range, for instance to detect gases in confined environments. Broadband cavity enhancement can be based on the decay time or the intensity drop technique. Decay time measurement is based on using tunable laser source that is expensive and suffers from long scan time. Intensity dependent measurement is usually reported based on broadband source using Fabry-Perot cavity, enabling short measurement time but suffers from the alignment tolerance of the cavity and the cavity insertion loss. In this work we overcome these challenges by using an alignment-free ring cavity made of an optical fiber loop and a directional coupler, while having a gain medium pumped below the lasing threshold to improve the finesse and reduce the insertion loss. Acetylene (C2H2) gas absorption is measured around 1535 nm wavelength using a semiconductor optical amplifier (SOA) gain medium. The system is analyzed for different ring resonator forward coupling coefficient and loses, including the 3-cm long gas cell insertion loss and fiber connector losses used in the experimental verification. The experimental results are obtained for a coupler ratio of 90/10 and a fiber length of 4 m. The broadband source is the amplified spontaneous emission of another SOA and the output is measured using a 70pm-resolution optical spectrum analyzer. The absorption depth and the effective interaction length are improved about an order of magnitude compared to the direct absorption of the gas cell. The presented technique provides an engineering method to improve the finesse and, consequently the effective length, while relaxing the technological constraints on the high reflectivity mirrors and free-space cavity alignment.

Red, green, and blue lasing enabled by single-exciton gain in colloidal quantum dot films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V.; Dang, Cuong

The methods and materials described herein contemplate the use films of colloidal quantum dots as a gain medium in a vertical-cavity surface-emitting laser. The present disclosure demonstrates a laser with single-exciton gain in the red, green, and blue wavelengths. Leveraging this nanocomposite gain, the results realize a significant step toward full-color single-material lasers.

Analysis of all-optical temporal integrator employing phased-shifted DFB-SOA.

PubMed

Jia, Xin-Hong; Ji, Xiao-Ling; Xu, Cong; Wang, Zi-Nan; Zhang, Wei-Li

2014-11-17

All-optical temporal integrator using phase-shifted distributed-feedback semiconductor optical amplifier (DFB-SOA) is investigated. The influences of system parameters on its energy transmittance and integration error are explored in detail. The numerical analysis shows that, enhanced energy transmittance and integration time window can be simultaneously achieved by increased injected current in the vicinity of lasing threshold. We find that the range of input pulse-width with lower integration error is highly sensitive to the injected optical power, due to gain saturation and induced detuning deviation mechanism. The initial frequency detuning should also be carefully chosen to suppress the integration deviation with ideal waveform output.

Wurtzite spin lasers

NASA Astrophysics Data System (ADS)

Faria Junior, Paulo E.; Xu, Gaofeng; Chen, Yang-Fang; Sipahi, Guilherme M.; Žutić, Igor

2017-03-01

Semiconductor lasers are strongly altered by adding spin-polarized carriers. Such spin lasers could overcome many limitations of their conventional (spin-unpolarized) counterparts. While the vast majority of experiments in spin lasers employed zinc-blende semiconductors, the room-temperature electrical manipulation was first demonstrated in wurtzite GaN-based lasers. However, the underlying theoretical description of wurtzite spin lasers is still missing. To address this situation, focusing on (In,Ga)N-based wurtzite quantum wells, we develop a theoretical framework in which the calculated microscopic spin-dependent gain is combined with a simple rate equation model. A small spin-orbit coupling in these wurtzites supports simultaneous spin polarizations of electrons and holes, providing unexplored opportunities to control spin lasers. For example, the gain asymmetry, as one of the key figures of merit related to spin amplification, can change the sign by simply increasing the carrier density. The lasing threshold reduction has a nonmonotonic dependence on electron-spin polarization, even for a nonvanishing hole spin polarization.

Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces

DOE PAGES

Vabishchevich, Polina P.; Liu, Sheng; Sinclair, Michael B.; ...

2018-01-27

All-dielectric metasurfaces, two-dimensional arrays of subwavelength low loss dielectric inclusions, can be used not only to control the amplitude and phase of optical beams, but also to generate new wavelengths through enhanced nonlinear optical processes that are free from some of the constraints dictated by the use of bulk materials. Recently, high quality factor (Q) resonances in these metasurfaces have been revealed and utilized for applications such as sensing and lasing. The origin of these resonances stems from the interference of two nanoresonator modes with vastly different Q. Here we show that nonlinear optical processes can be further enhanced bymore » utilizing these high-Q resonances in broken symmetry all-dielectric metasurfaces. As a result, we study second harmonic generation from broken symmetry metasurfaces made from III–V semiconductors and observe nontrivial spectral shaping of second-harmonic and multifold efficiency enhancement induced by high field localization and enhancement inside the nanoresonators.« less

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications

NASA Technical Reports Server (NTRS)

Connolly, J. C.; Carlin, D. B.; Ettenberg, M.

1989-01-01

A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed. The emission wavelength was optimized at 860 to 880 nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the performance of the laser are discussed. Reliability assessment at high output levels is included. Performance results on a new type of channeled substrate planar diode laser incorporating current blocking layers, grown by metalorganic chemical vapor deposition, to more effectively focus the operational current to the lasing region was demonstrated. The optoelectronic behavior and fabrication procedures for this new diode laser are discussed. The highlights include single spatial mode devices with up to 160 mW output at 8600 A, and quantum efficiencies of 70 percent (1 W/amp) with demonstrated operating lifetimes of 10,000 h at 50 mW.

Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

NASA Astrophysics Data System (ADS)

Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

2016-05-01

It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

Self-assembled dye-doped polymer microspheres as whispering gallery mode lasers

NASA Astrophysics Data System (ADS)

Chen, Xiaogang; Sun, Hongyi; Yang, Hongqin; Wu, Xiang; Xie, Shusen

2016-10-01

Microlasers based on high-Q whispering-gallery-mode (WGM) resonances are promising low-threshold laser sources for bio-sensing and imaging applications. In this talk, we demonstrate a cost effective approach to obtain size-controllable polymer microspheres, which can be served as good WGM microcavities. By injecting SU-8 solution into low-refractiveindex UV polymer, self-assembled spherical droplet with smooth surface can be created inside the elastic medium and then solidified by UV exposure. The size of the microspheres can be tuned from several to hundreds of microns. WGM Lasing has been achieved by optically pumping the dye-doped microspheres with ns lasers. Experimental results show that the microsphere lasers have high quality factors and low lasing thresholds. The self-assembled dye-doped polymer microspheres would provide an excellent platform for the micro-laser sources in on-chip biosensing and imaging systems.

Laser device and method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myers, J. D.

1985-06-25

A simplified, relatively inexpensive laser device, wherein the laser elements are fixed in a body exoskeleton of electrical insulating material having a low coefficient of thermal expansion. The preferred embodiment includes a shotgun type laser filter having parallel bores which receive the laser flashlamp and laser rod in fixed relation in a body chamber. The reflector surrounds the laser filter and retains the filter within the body chamber. In the preferred method of this invention, several controlled lasing pulses are generated with each illumination pulse of the flashlamp, substantially increasing the efficiency of the laser device. The number of pulsesmore » is generally controlled by increasing the voltage to the flashlamp. The rapid multiple lasing pulses generate an elongated plasma in a fluid medium, such as the vitreous fluid body of an eye which makes the laser device extemely efficient for treating glaucoma and other medical treatments.« less

Lasing in a nematic liquid crystal cell with an interdigitated electrode system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shtykov, N M; Palto, S P; Umanskii, B A

2015-04-30

Waveguide lasing in a layer of a dye-doped nematic liquid crystal has been observed. The liquid-crystal layer was sandwiched between a quartz substrate and a glass cover plate on whose surface was deposited an interdigitated electrode system. This system had a period of 3.75 μm and played a dual role, namely, it created a spatial periodicity of the waveguide medium refractive index (thus creating distributed feedback) and served as a diffraction grating coupling out a part of waveguide radiation into the glass cover plate. The distributed feedback ensured lasing in the 18th diffraction order for the TE modes and inmore » the 19th order for the TM modes of the waveguide. The generated radiation was observed at the exit from the glass plate end face at the angles to the waveguide plane of 33.1 ± 1.5° for TM modes and 21.8 ± 1.8° for TE modes. The intensity and position of the TE emission line showed no regular dependence on the voltage on the electrodes. In the case of TM radiation, an increase in the voltage led to a short-wavelength shift of the laser line and to a decrease in its intensity. (lasers)« less

High power gas laser amplifier

DOEpatents

Leland, Wallace T.; Stratton, Thomas F.

1981-01-01

A high power output CO.sub.2 gas laser amplifier having a number of sections, each comprising a plurality of annular pumping chambers spaced around the circumference of a vacuum chamber containing a cold cathode, gridded electron gun. The electron beam from the electron gun ionizes the gas lasing medium in the sections. An input laser beam is split into a plurality of annular beams, each passing through the sections comprising one pumping chamber.

How to Drive CARS in Reverse

DTIC Science & Technology

2013-11-07

pulse . This pulse is then used to drive a coherent anti-Stokes Raman scattering scheme, resulting in a strong chemically specific signal propagating...generation of a backward propagating stimulated Raman pulse . This pulse is then used to drive a coherent anti-Stokes Raman scattering scheme, resulting in a...proposed to re- motely generate a spatially coherent backward propagating pulse . The first uses the impurities in air as a lasing medium [2]. Two photon

Dual Q-switched laser outputs from a single lasing medium using an intracavity MEMS micromirror array.

PubMed

Bauer, Ralf; Lubeigt, Walter; Uttamchandani, Deepak

2012-09-01

An intracavity array of individually controlled microelectromechanical system scanning micromirrors was used to actively Q-switch a single side-pumped Nd:YAG gain medium. Two equal power independent laser outputs were simultaneously obtained by separate actuation of two adjacent micromirrors with a combined average output power of 125 mW. Pulse durations of 28 ns FWHM at 8.7 kHz repetition frequency and 34 ns FWHM at 7.9 kHz repetition frequency were observed for the two output beams with beam quality factors M2 of 1.2 and 1.1 and peak powers of 253 W and 232 W, respectively.

Transition of lasing modes in polymeric opal photonic crystal resonating cavity.

PubMed

Shi, Lan-Ting; Zheng, Mei-Ling; Jin, Feng; Dong, Xian-Zi; Chen, Wei-Qiang; Zhao, Zhen-Sheng; Duan, Xuan-Ming

2016-06-10

We demonstrate the transition of lasing modes in the resonating cavity constructed by polystyrene opal photonic crystals and 7 wt. % tert-butyl Rhodamine B doped polymer film. Both single mode and multiple mode lasing emission are observed from the resonating cavity. The lasing threshold is determined to be 0.81  μJ/pulse for single mode lasing emission and 2.25  μJ/pulse for multiple mode lasing emission. The single mode lasing emission is attributed to photonic lasing resulting from the photonic bandgap effect of the opal photonic crystals, while the multiple mode lasing emission is assigned to random lasing due to the defects in the photonic crystals. The result would benefit the development of low threshold polymeric solid state photonic crystal lasers.

Peculiarities of spike multimode generation of a superradiant distributed feedback laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kocharovskaya, E R; Ginzburg, N S; Sergeev, A S

2011-08-31

Using one-dimensional semiclassical Maxwell - Bloch equations with account for the coherent polarisation dynamics, we have studied spike generation regimes of a superradiant distributed feedback laser in the case of inhomogeneous broadening of the spectral line of an active medium. By analysing the dynamic spectra of inversion of the active medium and laser radiation, we have revealed the relationship of individual spikes of radiation and their modulation with specific parts in the spectral line of the active medium and mode beatings. It has been shown that the broadening and shift of the lasing spectrum with respect to the initial electromagneticmore » Bragg-cavity modes is accompanied by a strong spectral gradient of inversion that is typical of the superradiant regimes. (control of radiation parameters)« less

Detection of gain enhancement in laser-induced fluorescence of rhodamine B lasing dye by silicon dioxide nanostructures-coated cavity

NASA Astrophysics Data System (ADS)

Al-Tameemi, Mohammed N. A.

2018-03-01

In this work, nanostructured silicon dioxide films are deposited by closed-field unbalanced direct-current (DC) reactive magnetron sputtering technique on two sides of quartz cells containing rhodamine B dye dissolved in ethanol with 10‒5 M concentration as a random gain medium. The preparation conditions are optimized to prepare highly pure SiO2 nanostructures with a minimum particle size of about 20 nm. The effect of SiO2 films as external cavity for the random gain medium is determined by the laser-induced fluorescence of this medium, and an increase of about 200% in intensity is observed after the deposition of nanostructured SiO2 thin films on two sides of the dye cell.

High-resolution parallel-detection sensor array using piezo-phototronics effect

DOEpatents

Wang, Zhong L.; Pan, Caofeng

2015-07-28

A pressure sensor element includes a substrate, a first type of semiconductor material layer and an array of elongated light-emitting piezoelectric nanostructures extending upwardly from the first type of semiconductor material layer. A p-n junction is formed between each nanostructure and the first type semiconductor layer. An insulative resilient medium layer is infused around each of the elongated light-emitting piezoelectric nanostructures. A transparent planar electrode, disposed on the resilient medium layer, is electrically coupled to the top of each nanostructure. A voltage source is coupled to the first type of semiconductor material layer and the transparent planar electrode and applies a biasing voltage across each of the nanostructures. Each nanostructure emits light in an intensity that is proportional to an amount of compressive strain applied thereto.

Development of optically pumped DBR-free semiconductor disk lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Yang, Zhou; Albrecht, Alexander R.; Cederberg, Jeffrey G.; Sheik-Bahae, Mansoor

2017-03-01

Semiconductor disk lasers (SDLs) are attractive for applications requiring good beam quality, wavelength versatility, and high output powers. Typical SDLs utilize the active mirror geometry, where a semiconductor DBR is integrated with the active region by growth or post-growth bonding. This imposes restrictions for the SDL design, like material system choice, thermal management, and effective gain bandwidth. In DBR-free geometry, these restrictions can be alleviated. An integrated gain model predicts DBR-free geometry with twice the gain bandwidth of typical SDLs, which has been experimentally verified with active regions near 1 μm and 1.15 μm. The lift-off and bonding technique enables the integration of semiconductor active regions with arbitrary high quality substrates, allowing novel monolithic geometries. Bonding an active region onto a straight side of a commercial fused silica right angle prism, and attaching a high reflectivity mirror onto the hypotenuse side, with quasi CW pumping at 780 nm, lasing operation was achieved at 1037 nm with 0.2 mW average power at 1.6 mW average pump power. Laser dynamics show that thermal lens generation in the active region bottlenecks the laser efficiency. Investigations on total internal reflection based monolithic ring cavities are ongoing. These geometries would allow the intracavity integration of 2D materials or other passive absorbers, which could be relevant for stable mode locking. Unlike typical monolithic microchip SDLs, with the evanescent wave coupling technique, these monolithic geometries allow variable coupling efficiency.

Modern Inertial and Satellite Navigation Systems

DTIC Science & Technology

1994-05-02

rotor spins, the harder it is to disturb it. This technique is called spin stabilization and it is commonly used for communication satellites. Moder... using a generalization of the complex number called the quaternion . Modem Inertial and Satellite Navigation Systems page 32. 4.2 Exdrson in Pincile...length by an integer. Positive feedback arises from the use of a lasing medium, a gas, liquid, crystal ions, or any of a number of other possibilities

Fiber distributed feedback laser

NASA Technical Reports Server (NTRS)

Elachi, C.; Evans, G. A.; Yeh, C. (Inventor)

1976-01-01

Utilizing round optical fibers as communication channels in optical communication networks presents the problem of obtaining a high efficiency coupling between the optical fiber and the laser. A laser is made an integral part of the optical fiber channel by either diffusing active material into the optical fiber or surrounding the optical fiber with the active material. Oscillation within the active medium to produce lasing action is established by grating the optical fiber so that distributed feedback occurs.

Investigation of Singly Ionized Iodine Spectroscopy in Support of Electrostatic Propulsion Diagnostics Development

DTIC Science & Technology

2012-07-02

from complex user interactions due to the use of liquid lasing medium with finite lifetime. Solid state lasers such as titanium sapphire (Ti:Sapphire...transitions for laser -induced fluorescence of an accelerated atomic iodine singly charged ion (I+). While the second spectrum of iodine has been analyzed...diagnostics tools, such as laser -induced fluorescence (LIF), to examine the plasma acceleration within an electro-static plasma propulsion thruster. While

Multipulsed dynamic moire interferometer

DOEpatents

Deason, Vance A.

1991-01-01

An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

Multiple acousto-optic q-switch

DOEpatents

Deason, Vance A.

1993-01-01

An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

Multiple acousto-optic q-switch

DOEpatents

Deason, Vance A.

1993-12-07

An improved dynamic moire interferometer comprised of a lasing medium providing a plurality of beams of coherent light, a multiple q-switch producing multiple trains of 100,000 or more pulses per second, a combining means collimating multiple trains of pulses into substantially a single train and directing beams to specimen gratings affixed to a test material, and a controller, triggering and sequencing the emission of the pulses with the occurrence and recording of a dynamic loading event.

Radiation Effects on an Active Ytterbium doped Fiber Laser

DTIC Science & Technology

laser. While the gain medium of the laser was irradiated , the power was measured in-situ and the spectrum was recorded intermittently. The results...with a lower initial power. Power recovery experiments were conducted post- irradiation with the fiber laser off and actively lasing. Passively, the...total power recovery of 12.6 and 4.4 for YDF1 and YDF2 respectively. The active recovery rate declined as the number of days following irradiation

Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si

NASA Astrophysics Data System (ADS)

Palit, Sabarni; Kirch, Jeremy; Mawst, Luke; Kuech, Thomas; Jokerst, Nan Marie

2010-02-01

We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ~997 nm and a threshold current density of 250 A/cm2.

Segmented lasing tube for high temperature laser assembly

DOEpatents

Sawicki, Richard H.; Alger, Terry W.; Finucane, Raymond G.; Hall, Jerome P.

1996-01-01

A high temperature laser assembly capable of withstanding operating temperatures in excess of 1500.degree. C. is described comprising a segmented cylindrical ceramic lasing tube having a plurality of cylindrical ceramic lasing tube segments of the same inner and outer diameters non-rigidly joined together in axial alignment; insulation of uniform thickness surround the walls of the ceramic lasing tube; a ceramic casing, preferably of quartz, surrounding the insulation; and a fluid cooled metal jacket surrounds the ceramic casing. In a preferred embodiment, the inner surface of each of the ceramic lasing tube segments are provided with a pair of oppositely spaced grooves in the wall thereof parallel to the center axis of the segmented cylindrical ceramic lasing tube, and both of the grooves and the center axis of the segmented cylindrical ceramic lasing tube lie in a common plane, with the grooves in each ceramic lasing tube segment in circumferential alignment with the grooves in the adjoining ceramic lasing tube segments; and one or more ceramic plates, all lying in a common plane to one another and with the central axis of the segmented ceramic lasing tube, are received in the grooves to provide additional wall area in the segmented ceramic lasing tube for collision and return to ground state of metastable metal atoms within the segmented ceramic lasing tube.

Tight-Binding Description of Impurity States in Semiconductors

ERIC Educational Resources Information Center

Dominguez-Adame, F.

2012-01-01

Introductory textbooks in solid state physics usually present the hydrogenic impurity model to calculate the energy of carriers bound to donors or acceptors in semiconductors. This model treats the pure semiconductor as a homogeneous medium and the impurity is represented as a fixed point charge. This approach is only valid for shallow impurities…

Crossover from polariton lasing to exciton lasing in a strongly coupled ZnO microcavity.

PubMed

Lai, Ying-Yu; Chou, Yu-Hsun; Lan, Yu-Pin; Lu, Tien-Chang; Wang, Shing-Chung; Yamamoto, Yoshihisa

2016-02-03

Unlike conventional photon lasing, in which the threshold is limited by the population inversion of the electron-hole plasma, the exciton lasing generated by exciton-exciton scattering and the polariton lasing generated by dynamical condensates have received considerable attention in recent years because of the sub-Mott density and low-threshold operation. This paper presents a novel approach to generate both exciton and polariton lasing in a strongly coupled microcavity (MC) and determine the critical driving requirements for simultaneously triggering these two lasing operation in temperature <140 K and large negative polariton-exciton offset (<-133 meV) conditions. In addition, the corresponding lasing behaviors, such as threshold energy, linewidth, phase diagram, and angular dispersion are verified. The results afford a basis from which to understand the complicated lasing mechanisms in strongly coupled MCs and verify a new method with which to trigger dual laser emission based on exciton and polariton.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lv, Zun-Ren; Ji, Hai-Ming, E-mail: jhm@semi.ac.cn; Luo, Shuai

Large signal modulation characteristics of the simultaneous ground-state (GS) and excited-state (ES) lasing quantum dot lasers are theoretically investigated. Relaxation oscillations of ‘0 → 1’ and ‘1 → 0’ in the GS lasing region (Region I), the transition region from GS lasing to two-state lasing (Region II) and the two-state lasing region (Region III) are compared and analyzed. It is found that the overshooting power and settling time in both Regions I and III decrease as the bias current increases. However, there exist abnormal behaviors of the overshooting power and settling time in Region II owing to the occurrence ofmore » ES lasing, which lead to fuzzy eye diagrams of the GS and ES lasing. Moreover, the ES lasing in Region III possesses much better eye diagrams because of its shorter settling time and smaller overshooting power over the GS lasing in Region I.« less

Semiclassical analysis of spectral singularities and their applications in optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mostafazadeh, Ali

2011-08-15

Motivated by possible applications of spectral singularities in optics, we develop a semiclassical method of computing spectral singularities. We use this method to examine the spectral singularities of a planar slab gain medium whose gain coefficient varies due to the exponential decay of the intensity of the pumping beam inside the medium. For both singly and doublypumped samples, we obtain universal upper bounds on the decay constant beyond which no lasing occurs. Furthermore, we show that the dependence of the wavelength of the spectral singularities on the value of the decay constant is extremely mild. This is an indication ofmore » the stability of optical spectral singularities.« less

Absolute instability of polaron mode in semiconductor magnetoplasma

NASA Astrophysics Data System (ADS)

Paliwal, Ayushi; Dubey, Swati; Ghosh, S.

2018-01-01

Using coupled mode theory under hydrodynamic regime, a compact dispersion relation is derived for polaron mode in semiconductor magnetoplasma. The propagation and amplification characteristics of the wave are explored in detail. The analysis deals with the behaviour of anomalous threshold and amplification derived from dispersion relation, as function of external parameters like doping concentration and applied magnetic field. The results of this investigation are hoped to be useful in understanding electron-longitudinal optical phonon interplay in polar n-type semiconductor plasmas under the influence of coupled collective cyclotron excitations. The best results in terms of smaller threshold and higher gain of polaron mode could be achieved by choosing moderate doping concentration in the medium at higher magnetic field. For numerical appreciation of the results, relevant data of III-V n-GaAs compound semiconductor at 77 K is used. Present study provides a qualitative picture of polaron mode in magnetized n-type polar semiconductor medium duly shined by a CO2 laser.

Random lasing action in a polydimethylsiloxane wrinkle induced disordered structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Zhenhua; Wu, Leilei; Zhu, Shu

This paper presents a chip-scale random lasing action utilizing polydimethylsiloxane (PDMS) wrinkles with random periods as disordered medium. Nanoscale wrinkles with long range disorder structures are formed on the oxidized surface of a PDMS slab and confirmed by atomic force microscopy. Light multiply scattered at each PDMS wrinkle-dye interfaces is optically amplified in the presence of pump gain. The shift of laser emission wavelength when pumping at different regions indicates the randomness of the winkle period. In addition, a relatively low threshold of about 27 μJ/mm{sup 2} is realized, which is comparable with traditional optofluidic dye laser. This is due tomore » the unique sinusoidal Bragg-grating-like random structure. Contrast to conventional microfluidic dye laser that inevitably requires the accurate design and implementation of microcavity to provide optical feedback, the convenience in both fabrication and operation makes PDMS wrinkle based random laser a promising underlying element in lab-on-a-chip systems and integrated microfluidic networks.« less

Two-dimensional photonic crystal bandedge laser with hybrid perovskite thin film for optical gain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cha, Hyungrae; Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826; Bae, Seunghwan

2016-05-02

We report optically pumped room temperature single mode laser that contains a thin film of hybrid perovskite, an emerging photonic material, as gain medium. Two-dimensional square lattice photonic crystal (PhC) backbone structure enables single mode laser operation via a photonic bandedge mode, while a thin film of methyl-ammonium lead iodide (CH{sub 3}NH{sub 3}PbI{sub 3}) spin-coated atop provides optical gain for lasing. Two kinds of bandedge modes, Γ and M, are employed, and both devices laser in single mode at similar laser thresholds of ∼200 μJ/cm{sup 2} in pulse energy density. Polarization dependence measurements reveal a clear difference between the two kindsmore » of bandedge lasers: isotropic for the Γ-point laser and highly anisotropic for the M-point laser. These observations are consistent with expected modal properties, confirming that the lasing actions indeed originate from the corresponding PhC bandedge modes.« less

Stimulated emission within the exciplex band by plasmonic-nanostructured polymeric heterojunctions

NASA Astrophysics Data System (ADS)

Zhang, Xinping; Li, Hongwei; Wang, Yimeng; Liu, Feifei

2015-03-01

Organic heterojunctions have been extensively employed in the design of light-emitting diodes, photovoltaic devices, and thin-film field-effect transistors, which can be achieved by constructing a bilayer or a multi-layered thin-film deposition, or by blending two or more organic semiconductors with different charge-transport performances. Charge transfer excited states or exciplex may form on the heterointerfaces. Efficient light-emitting diodes have been demonstrated using exciplex emission. However, lasing or stimulated emission processes have not been observed with exciplex formation at organic heterojunctions. In this work, we demonstrate strong coherent interaction between photons and exciplex formation in the blends of poly-9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-l,4-phenylenediamine (PFB) and poly-9,9'-dioctylfluorene-co-benzothiadiazole (F8BT), leading to transient stimulated exciplex emission. The responsible mechanisms involve plasmonic local-field enhancement and plasmonic feedback in a three-dimensional gold-nanoparticle matrix.Organic heterojunctions have been extensively employed in the design of light-emitting diodes, photovoltaic devices, and thin-film field-effect transistors, which can be achieved by constructing a bilayer or a multi-layered thin-film deposition, or by blending two or more organic semiconductors with different charge-transport performances. Charge transfer excited states or exciplex may form on the heterointerfaces. Efficient light-emitting diodes have been demonstrated using exciplex emission. However, lasing or stimulated emission processes have not been observed with exciplex formation at organic heterojunctions. In this work, we demonstrate strong coherent interaction between photons and exciplex formation in the blends of poly-9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-l,4-phenylenediamine (PFB) and poly-9,9'-dioctylfluorene-co-benzothiadiazole (F8BT), leading to transient stimulated exciplex emission. The responsible mechanisms involve plasmonic local-field enhancement and plasmonic feedback in a three-dimensional gold-nanoparticle matrix. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00140d

Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications

NASA Astrophysics Data System (ADS)

Al-Kabi, Sattar H. Sweilim

Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 mum were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid-infrared laser sources for integrated photonics.

The 2-6 semiconductor superlattices

NASA Astrophysics Data System (ADS)

Gunshor, R. L.; Otsuka, N.

1992-12-01

The first operational semiconductor diode lasers were demonstrated in the summer of 1991 independently by two U.S. groups, one at 3M and the other a team effort shared by Purdue and Brown Universities. As a result of the close collaboration between MBE and TEM groups within the grant, the structures for lasing and LED (as well as display device) operation were realized with the lowest defect concentrations ever reported for 2-6 structures grown on GaAs by MBE. The reduction of the dislocation levels resulted from an iterative process where the growth could be modified in response to the TEM analysis. The AFOSR funded interface studies have led to our appreciation of the electrical and microstructural considerations obtaining at 2-6/3-5 heterovalent interfaces. As a result the Purdue/Brown group has had equal success in making laser diodes with substrates of both doping types. The Purdue/Brown collaboration has obtained CW operations at 77 K as well as pulsed operation at room temperature using a Zn(S,Se)-based device configuration emitting in the blue (490 nm at room temperature).

Comparison on electrically pumped random laser actions of hydrothermal and sputtered ZnO films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Canxing; Jiang, Haotian; Li, Yunpeng

2013-10-07

Random lasing (RL) in polycrystalline ZnO films is an intriguing research subject. Here, we have comparatively investigated electrically pumped RL behaviors of two metal-insulator-semiconductor structured devices using the hydrothermal and sputtered ZnO films as the semiconductor components, i.e., the light-emitting layers, respectively. It is demonstrated that the device using the hydrothermal ZnO film exhibits smaller threshold current and larger output optical power of the electrically pumped RL. The morphological characterization shows that the hydrothermal ZnO film is somewhat porous and is much rougher than the sputtered one, suggesting that in the former stronger multiple light scattering can occur. Moreover, themore » photoluminescence characterization indicates that there are fewer defects in the hydrothermal ZnO film than in the sputtered one, which means that the photons can pick up larger optical gain through stimulated emission in the hydrothermal ZnO film. Therefore, it is believed that the stronger multiple light scattering and larger optical gain contribute to the improved performance of the electrically pumped RL from the device using the hydrothermal ZnO film.« less

Theory and Simulation of Self- and Mutual-Diffusion of Carrier Density and Temperature in Semiconductor Lasers

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Cheung, Samson H.; Ning, C. Z.

2001-01-01

Carrier diffusion and thermal conduction play a fundamental role in the operation of high-power, broad-area semiconductor lasers. Restricted geometry, high pumping level and dynamic instability lead to inhomogeneous spatial distribution of plasma density, temperature, as well as light field, due to strong light-matter interaction. Thus, modeling and simulation of such optoelectronic devices rely on detailed descriptions of carrier dynamics and energy transport in the system. A self-consistent description of lasing and heating in large-aperture, inhomogeneous edge- or surface-emitting lasers (VCSELs) require coupled diffusion equations for carrier density and temperature. In this paper, we derive such equations from the Boltzmann transport equation for the carrier distributions. The derived self- and mutual-diffusion coefficients are in general nonlinear functions of carrier density and temperature including many-body interactions. We study the effects of many-body interactions on these coefficients, as well as the nonlinearity of these coefficients for large-area VCSELs. The effects of mutual diffusions on carrier and temperature distributions in gain-guided VCSELs will be also presented.

Thermocouple for heating and cooling of memory metal actuators

NASA Technical Reports Server (NTRS)

Wood, Charles (Inventor)

1988-01-01

A semiconductor thermocouple unit is provided for heating and cooling memory metal actuators. The semiconductor thermocouple unit is mounted adjacent to a memory metal actuator and has a heat sink attached to it. A flexible thermally conductive element extends between the semiconductor thermocouple and the actuator and serves as a heat transfer medium during heating and cooling operations.

Thermally stable surface-emitting tilted wave laser

NASA Astrophysics Data System (ADS)

Shchukin, V. A.; Ledentsov, N. N.; Kalosha, V. P.; Ledentsov, N.; Agustin, M.; Kropp, J. R.; Maximov, M. V.; Zubov, F. I.; Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu; Kulagina, M. M.; Zhukov, A. E.

2018-02-01

Novel lasing modes in a vertical-cavity surface-emitting laser (VCSEL)-type structure based on an antiwaveguding cavity are studied. Such a VCSEL cavity has an effective refractive index in the cavity region lower than the average index of the distributed Bragg reflectors (DBRs). Such device in a stripe geometry does not support in-plane waveguiding mode, and all modes with a high Q-factor are exclusively VCSEL-like modes with similar near field profile in the vertical direction. A GaAlAs-based VCSEL structure studied contains a resonant cavity with multiple GaInAs quantum wells as an active region. The VCSEL structure is processed as an edge-emitting laser with cleaved facets and top contact representing a non-alloyed metal grid. Rectangular-shaped 400x400 µm pieces are cleaved with perpendicular facets. The contact grid region has a total width of 70 μm. 7 μm-wide metal stripes serve as non-alloyed metal contact and form periodic rectangular openings having a size of 10x40 μm. Surface emission through the windows on top of the chip is measured at temperatures from 90 to 380 K. Three different types of modes are observed. The longest wavelength mode (mode A) is a VCSEL-like mode at 854 nm emitting normal to the surface with a full width at half maximum (FWHM) of the far field 10°. Accordingly the lasing wavelength demonstrates a thermal shift of the wavelength of 0.06 nm/K. Mode B is at shorter wavelengths of 840 nm at room temperature, emitting light at two symmetric lobes at tilt angles 40° with respect to the normal to the surface in the directions parallel to the stripe. The emission wavelength of this mode shifts at a rate 0.22 nm/K according to the GaAs bandgap shift. The angle of mode B with respect to the normal reduces as the wavelength approaches the vertical cavity etalon wavelength and this mode finally merges with the VCSEL mode. Mode B hops between different lateral modes of the VCSEL forming a dense spectrum due to significant longitudinal cavity length, and the thermal shift of its wavelength is governed by the shift of the gain spectrum. The most interesting observation is Mode C, which shifts at a rate 0.06 nm/K and has a spectral width of 1 nm. Mode C matches the wavelength of the critical angle for total internal reflection for light impinging from semiconductor chip on semiconductor/air interface and propagates essentially as an in-plane mode. According to modeling data we conclude that the lasing mode represents a coupled state between the TM-polarized surface-trapped optical mode and the VCSEL cavity mode. The resulting mode has an extended near field zone and low propagation losses. The intensity of the mode drastically enhances once is appears at resonance with Mode B. A clear threshold is revealed in the L-I curves of all modes and there is a strong competition of the lasing mechanisms once the gain maximum is scanned over the related wavelength range by temperature change.

New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

NASA Astrophysics Data System (ADS)

Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

2002-05-01

The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

Crossover from polariton lasing to exciton lasing in a strongly coupled ZnO microcavity

PubMed Central

Lai, Ying-Yu; Chou, Yu-Hsun; Lan, Yu-Pin; Lu, Tien-Chang; Wang, Shing-Chung; Yamamoto, Yoshihisa

2016-01-01

Unlike conventional photon lasing, in which the threshold is limited by the population inversion of the electron-hole plasma, the exciton lasing generated by exciton-exciton scattering and the polariton lasing generated by dynamical condensates have received considerable attention in recent years because of the sub-Mott density and low-threshold operation. This paper presents a novel approach to generate both exciton and polariton lasing in a strongly coupled microcavity (MC) and determine the critical driving requirements for simultaneously triggering these two lasing operation in temperature <140 K and large negative polariton-exciton offset (<−133 meV) conditions. In addition, the corresponding lasing behaviors, such as threshold energy, linewidth, phase diagram, and angular dispersion are verified. The results afford a basis from which to understand the complicated lasing mechanisms in strongly coupled MCs and verify a new method with which to trigger dual laser emission based on exciton and polariton. PMID:26838665

Rotational nonequilibrium mechanisms in pulsed H/sub 2/+F/sub 2/ chain reaction lasers. 2: Effect of VR energy exchange

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kerber, R.L.; Brown, R.C.; Emery, K.A.

1980-01-15

The occurrence of pure rotational-to-rotational lasing from high J levels suggests that present rotational nonequilibrium mechanisms are inadequate to explain all lasing behavior of the HF laser. A possible mechanism for explaining this behavior is vibrational-to-rotational energy transfer. The usual assumption that vibrational relaxation occurs with rotational levels at equilibrium at the translational temperature is replaced with a near resonant multiquanta VR process that results in the formation of highly excited rotational states. Computer simulations incorporating VR relaxation predicted significant occurrence of rotational lasing. A simpler model that produced rotational nonequilibrium from pumping and P-branch lasing did not exhibit rotationalmore » lasing. Rotational lasing did not decrease energy available to P-branch lasing and produced effects resembling an increase in rotational relaxation rates. Rotational lasing is very sensitive to kinetics for both VR energy exchange and rotational relaxation.« less

DPAL: Historical Perspective And Summary Of Achievements

DTIC Science & Technology

2013-08-20

of a gas gain medium. The thermal effects existing, for example, in solid state lasers cause aberrations and thermal lensing that degrade the beam...and 500 torr of ethane buffer gas had windows AR coated on both sides (external and internal) and was kept at 98°C. The pump and lasing beams were...back mirror. A 2 cm long cell with antireflection coated windows was filled with metallic cesium and 500 Torr ethane and placed in a heated oven with a

Class-A dual-frequency VECSEL at telecom wavelength.

PubMed

De, Syamsundar; Baili, Ghaya; Alouini, Mehdi; Harmand, Jean-Christophe; Bouchoule, Sophie; Bretenaker, Fabien

2014-10-01

We report class-A dual-frequency oscillation at 1.55 μm in a vertical external cavity surface emitting laser with more than 100 mW optical power. The two orthogonal linear polarizations of different frequencies oscillate simultaneously as their nonlinear coupling is reduced below unity by spatially separating them inside the active medium. The spectral behavior of the radio frequency beatnote obtained by optically mixing two polarizations and the phase noise of the beatnote have been explored for different coupling strengths between the lasing modes.

Single transverse mode protein laser

NASA Astrophysics Data System (ADS)

Dogru, Itir Bakis; Min, Kyungtaek; Umar, Muhammad; Bahmani Jalali, Houman; Begar, Efe; Conkar, Deniz; Firat Karalar, Elif Nur; Kim, Sunghwan; Nizamoglu, Sedat

2017-12-01

Here, we report a single transverse mode distributed feedback (DFB) protein laser. The gain medium that is composed of enhanced green fluorescent protein in a silk fibroin matrix yields a waveguiding gain layer on a DFB resonator. The thin TiO2 layer on the quartz grating improves optical feedback due to the increased effective refractive index. The protein laser shows a single transverse mode lasing at the wavelength of 520 nm with the threshold level of 92.1 μJ/ mm2.

Polarization methods for diode laser excitation of solid state lasers

DOEpatents

Holtom, Gary R.

2008-11-25

A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. A Yb-doped gain medium can be used that absorbs light having a first polarization and emits light having a second polarization. Using such pumping with laser cavity dispersion control, pulse durations of less than 100 fs can be achieved.

Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, X., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.

2015-02-16

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injectedmore » photons.« less

Organic Microcrystal Vibronic Lasers with Full-Spectrum Tunable Output beyond the Franck-Condon Principle.

PubMed

Dong, Haiyun; Zhang, Chunhuan; Liu, Yuan; Yan, Yongli; Hu, Fengqin; Zhao, Yong Sheng

2018-03-12

The very broad emission bands of organic semiconductor materials are, in theory, suitable for achieving versatile solid-state lasers; however, most of organic materials only lase at short wavelength corresponding to the 0-1 transition governed by the Franck-Condon (FC) principle. A strategy is developed to overcome the limit of FC principle for tailoring the output of microlasers over a wide range based on the controlled vibronic emission of organic materials at microcrystal state. For the first time, the output wavelength of organic lasers is tailored across all vibronic (0-1, 0-2, 0-3, and even 0-4) bands spanning the entire emission spectrum. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Terahertz plasmonic laser radiating in an ultra-narrow beam

DOE PAGES

Wu, Chongzhao; Khanal, Sudeep; Reno, John L.; ...

2016-07-07

Plasmonic lasers (spasers) generate coherent surface plasmon polaritons (SPPs) and could be realized at subwavelength dimensions in metallic cavities for applications in nanoscale optics. Plasmonic cavities are also utilized for terahertz quantum-cascade lasers (QCLs), which are the brightest available solid-state sources of terahertz radiation. A long standing challenge for spasers that are utilized as nanoscale sources of radiation, is their poor coupling to the far-field radiation. Unlike conventional lasers that could produce directional beams, spasers have highly divergent radiation patterns due to their subwavelength apertures. Here, we theoretically and experimentally demonstrate a new technique for implementing distributed feedback (DFB) thatmore » is distinct from any other previously utilized DFB schemes for semiconductor lasers. The so-termed antenna-feedback scheme leads to single-mode operation in plasmonic lasers, couples the resonant SPP mode to a highly directional far-field radiation pattern, and integrates hybrid SPPs in surrounding medium into the operation of the DFB lasers. Experimentally, the antenna-feedback method, which does not require the phase matching to a well-defined effective index, is implemented for terahertz QCLs, and single-mode terahertz QCLs with a beam divergence as small as 4°×4° are demonstrated, which is the narrowest beam reported for any terahertz QCL to date. Moreover, in contrast to a negligible radiative field in conventional photonic band-edge lasers, in which the periodicity follows the integer multiple of half-wavelengths inside the active medium, antenna-feedback breaks this integer limit for the first time and enhances the radiative field of the lasing mode. Terahertz lasers with narrow-beam emission will find applications for integrated as well as standoff terahertz spectroscopy and sensing. Furthermore, the antenna-feedback scheme is generally applicable to any plasmonic laser with a Fabry–Perot cavity irrespective of its operating wavelength and could bring plasmonic lasers closer to practical applications.« less

Laser rods with undoped, flanged end-caps for end-pumped laser applications

DOEpatents

Meissner, Helmuth E.; Beach, Raymond J.; Bibeau, Camille; Sutton, Steven B.; Mitchell, Scott; Bass, Isaac; Honea, Eric

1999-01-01

A method and apparatus for achieving improved performance in a solid state laser is provided. A flanged, at least partially undoped end-cap is attached to at least one end of a laserable medium. Preferably flanged, undoped end-caps are attached to both ends of the laserable medium. Due to the low scatter requirements for the interface between the end-caps and the laser rod, a non-adhesive method of bonding is utilized such as optical contacting combined with a subsequent heat treatment of the optically contacted composite. The non-bonded end surfaces of the flanged end-caps are coated with laser cavity coatings appropriate for the lasing wavelength of the laser rod. A cooling jacket, sealably coupled to the flanged end-caps, surrounds the entire length of the laserable medium. Radiation from a pump source is focussed by a lens duct and passed through at least one flanged end-cap into the laser rod.

Method and apparatus for producing laser radiation following two-photon excitation of a gaseous medium

DOEpatents

Bischel, William K. [Menlo Park, CA; Jacobs, Ralph R. [Livermore, CA; Prosnitz, Donald [Hamden, CT; Rhodes, Charles K. [Palo Alto, CA; Kelly, Patrick J. [Fort Lewis, WA

1979-02-20

Method and apparatus for producing laser radiation by two-photon optical pumping of an atomic or molecular gaseous medium and subsequent lasing action. A population inversion is created as a result of two-photon absorption of the gaseous species. Stark tuning is utilized, if necessary, in order to tune the two-photon transition into exact resonance. In particular, gaseous ammonia (NH.sub.3) or methyl fluoride (CH.sub.3 F) is optically pumped by a pair of CO.sub.2 lasers to create a population inversion resulting from simultaneous two-photon excitation of a high-lying vibrational state, and laser radiation is produced by stimulated emission of coherent radiation from the inverted level.

Method and apparatus for producing laser radiation following two-photon excitation of a gaseous medium

DOEpatents

Bischel, W.K.; Jacobs, R.R.; Prosnitz, D.P.; Rhodes, C.K.; Kelly, P.J.

1979-02-20

Method and apparatus are disclosed for producing laser radiation by two-photon optical pumping of an atomic or molecular gaseous medium and subsequent lasing action. A population inversion is created as a result of two-photon absorption of the gaseous species. Stark tuning is utilized, if necessary, in order to tune the two-photon transition into exact resonance. In particular, gaseous ammonia (NH[sub 3]) or methyl fluoride (CH[sub 3]F) is optically pumped by a pair of CO[sub 2] lasers to create a population inversion resulting from simultaneous two-photon excitation of a high-lying vibrational state, and laser radiation is produced by stimulated emission of coherent radiation from the inverted level. 3 figs.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

NASA Astrophysics Data System (ADS)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present new insight into the physics of nonlinear coherent pulse propagation phenomena in active (semiconductor) gain media. Our numerical full time-domain simulations are shown to generally agree well with analytical predictions, while in the case of optical pulses with large pulse areas or few-cycle pulses they reveal the limits of analytic approaches. Finally, it is demonstrated that coherent ultrafast nonlinear propagation effects become less distinctive if we apply a realistic model of the quantum well semiconductor gain material, consider characteristic loss channels and take into account de-phasing processes and homogeneous broadening.

III-Nitride Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wright, Jeremy Benjamin

2014-07-01

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices.more » Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that emit vertically. By tuning the geometrical properties of the individual lasers across the array, each individual nanowire laser produced a di erent emission wavelength yielding a near continuum of laser wavelengths. I successfully fabricated an array of emitters spanning a bandwidth of 60 nm on a single chip. This was achieved in the blue-violet using III-nitride photonic crystal nanowire lasers.« less

Emission from quantum-dot high-β microcavities: transition from spontaneous emission to lasing and the effects of superradiant emitter coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kreinberg, Sören; Chow, Weng W.; Wolters, Janik

Measured and calculated results are presented for the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime. The structures are based on high-finesse GaAs/AlAs micropillar cavities, each with an active medium consisting of a layer of InGaAs quantum dots (QDs) and the distinguishing feature of having a substantial fraction of spontaneous emission channeled into one cavity mode (high β-factor). This paper demonstrates that the usual criterion for lasing with a conventional (low β-factor) cavity, that is, a sharp non-linearity in the input–output curve accompanied by noticeable linewidth narrowing, has to be reinforced by themore » equal-time second-order photon autocorrelation function to confirm lasing. The article also shows that the equal-time second-order photon autocorrelation function is useful for recognizing superradiance, a manifestation of the correlations possible in high-β microcavities operating with QDs. In terms of consolidating the collected data and identifying the physics underlying laser action, both theory and experiment suggest a sole dependence on intracavity photon number. Evidence for this assertion comes from all our measured and calculated data on emission coherence and fluctuation, for devices ranging from light-emitting diodes (LEDs) and cavity-enhanced LEDs to lasers, lying on the same two curves: one for linewidth narrowing versus intracavity photon number and the other for g( 2)(0) versus intracavity photon number.« less

Emission from quantum-dot high-β microcavities: transition from spontaneous emission to lasing and the effects of superradiant emitter coupling

DOE PAGES

Kreinberg, Sören; Chow, Weng W.; Wolters, Janik; ...

2017-02-28

Measured and calculated results are presented for the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime. The structures are based on high-finesse GaAs/AlAs micropillar cavities, each with an active medium consisting of a layer of InGaAs quantum dots (QDs) and the distinguishing feature of having a substantial fraction of spontaneous emission channeled into one cavity mode (high β-factor). This paper demonstrates that the usual criterion for lasing with a conventional (low β-factor) cavity, that is, a sharp non-linearity in the input–output curve accompanied by noticeable linewidth narrowing, has to be reinforced by themore » equal-time second-order photon autocorrelation function to confirm lasing. The article also shows that the equal-time second-order photon autocorrelation function is useful for recognizing superradiance, a manifestation of the correlations possible in high-β microcavities operating with QDs. In terms of consolidating the collected data and identifying the physics underlying laser action, both theory and experiment suggest a sole dependence on intracavity photon number. Evidence for this assertion comes from all our measured and calculated data on emission coherence and fluctuation, for devices ranging from light-emitting diodes (LEDs) and cavity-enhanced LEDs to lasers, lying on the same two curves: one for linewidth narrowing versus intracavity photon number and the other for g( 2)(0) versus intracavity photon number.« less

Laser-scanned fluorescence of nonlased/normal, lased/normal, nonlased/carious, and lased/carious enamel

NASA Astrophysics Data System (ADS)

Zakariasen, Kenneth L.; Barron, Joseph R.; Paton, Barry E.

1992-06-01

Research has shown that low levels of CO2 laser irradiation raise enamel resistance to sub-surface demineralization. Additionally, laser scanned fluorescence analysis of enamel, as well a laser and white light reflection studies, have potential for both clinical diagnosis and comparative research investigations of the caries process. This study was designed to compare laser fluorescence and laser/white light reflection of (1) non-lased/normal with lased/normal enamel and (2) non-lased/normal with non-lased/carious and lased/carious enamel. Specimens were buccal surfaces of extracted third molars, coated with acid resistant varnish except for either two or three 2.25 mm2 windows (two window specimens: non-lased/normal, lased/normal--three window specimens: non-lased/normal, non-lased carious, lased/carious). Teeth exhibiting carious windows were immersed in a demineralizing solution for twelve days. Non-carious windows were covered with wax during immersion. Following immersion, the wax was removed, and fluorescence and laser/white light reflection analyses were performed on all windows utilizing a custom scanning laser fluorescence spectrometer which focuses light from a 25 mWatt He-Cd laser at 442 nm through an objective lens onto a cross-section >= 3 (mu) in diameter. For laser/white light reflection analyses, reflected light intensities were measured. A HeNe laser was used for laser light reflection studies. Following analyses, the teeth are sectioned bucco-lingually into 80 micrometers sections, examined under polarized light microscopy, and the lesions photographed. This permits comparison between fluorescence/reflected light values and the visualized decalcification areas for each section, and thus comparisons between various enamel treatments and normal enamel. The enamel specimens are currently being analyzed.

Surface breakdown igniter for mercury arc devices

DOEpatents

Bayless, John R.

1977-01-01

Surface breakdown igniter comprises a semiconductor of medium resistivity which has the arc device cathode as one electrode and has an igniter anode electrode so that when voltage is applied between the electrodes a spark is generated when electrical breakdown occurs over the surface of the semiconductor. The geometry of the igniter anode and cathode electrodes causes the igniter discharge to be forced away from the semiconductor surface.

Phase mismatched optical parametric generation in semiconductor magnetoplasma

NASA Astrophysics Data System (ADS)

Dubey, Swati; Ghosh, S.; Jain, Kamal

2017-05-01

Optical parametric generation involves the interaction of pump, signal, and idler waves satisfying law of conservation of energy. Phase mismatch parameter plays important role for the spatial distribution of the field along the medium. In this paper instead of exactly matching wave vector, a small mismatch is admitted with a degree of phase velocity mismatch between these waves. Hence the medium must possess certain finite coherence length. This wave mixing process is well explained by coupled mode theory and one dimensional hydrodynamic model. Based on this scheme, expressions for threshold pump field and transmitted intensity have been derived. It is observed that the threshold pump intensity and transmitted intensity can be manipulated by varying doping concentration and magnetic field under phase mismatched condition. A compound semiconductor crystal of n-InSb is assumed to be shined at 77 K by a 10.6μm CO2 laser with photon energy well below band gap energy of the crystal, so that only free charge carrier influence the optical properties of the medium for the I.R. parametric generation in a semiconductor plasma medium. Favorable parameters were explored to incite the said process keeping in mind the cost effectiveness and conversion efficiency of the process.

Standoff Detection of Trace Molecules by Remote High Gain Backward Lasing in Air

DTIC Science & Technology

2016-09-17

vapor it is essential. Backward lasing from two simultaneously pumped, closely separated regions in the air provides a method for the reduction of pulse... inversion in an atomic species, leading to “cavityless” lasing. Lasing occurs from the population inversion that is created in the focal volume of...provide a reference that is capable of removing these pulse-to- pulse variations, a second, simultaneous backward lasing beam is generated using the same

Theory and modelling of light-matter interactions in photonic crystal cavity systems coupled to quantum dot ensembles

NASA Astrophysics Data System (ADS)

Cartar, William K.

Photonic crystal microcavity quantum dot lasers show promise as high quality-factor, low threshold lasers, that can be integrated on-chip, with tunable room temperature opera- tions. However, such semiconductor microcavity lasers are notoriously difficult to model in a self-consistent way and are primarily modelled by simplified rate equation approxima- tions, typically fit to experimental data, which limits investigations of their optimization and fundamental light-matter interaction processes. Moreover, simple cavity mode optical theory and rate equations have recently been shown to fail in explaining lasing threshold trends in triangular lattice photonic crystal cavities as a function of cavity size, and the potential impact of fabrication disorder is not well understood. In this thesis, we develop a simple but powerful numerical scheme for modelling the quantum dot active layer used for lasing in these photonic crystal cavity structures, as an ensemble of randomly posi- tioned artificial two-level atoms. Each two-level atom is defined by optical Bloch equations solved by a quantum master equation that includes phenomenological pure dephasing and an incoherent pump rate that effectively models a multi-level gain system. Light-matter in- teractions of both passive and lasing structures are analyzed using simulation defined tools and post-simulation Green function techniques. We implement an active layer ensemble of up to 24,000 statistically unique quantum dots in photonic crystal cavity simulations, using a self-consistent finite-difference time-domain method. This method has the distinct advantage of capturing effects such as dipole-dipole coupling and radiative decay, without the need for any phenomenological terms, since the time-domain solution self-consistently captures these effects. Our analysis demonstrates a powerful ability to connect with recent experimental trends, while remaining completely general in its set-up; for example, we do not invoke common approximations such as the rotating-wave or slowly-varying envelope approximations, and solve dynamics with zero a priori knowledge.

Observation of random lasing in gold-silica nanoshell/water solution

NASA Astrophysics Data System (ADS)

Kang, Jin U.

2006-11-01

The author reports experimental observation of resonant surface plasmon enhanced random lasing in gold-silica nanoshells in de-ionized water. The gold-silica nanoshell/water solution with concentration of 8×109particles/ml was pumped above the surface plasmon resonance frequency using 514nm argon-krypton laser. When pumping power was above the lasing threshold, sharp random lasing peaks occurred near and below the plasmon peak from 720to860nm with a lasing linewidth less than 1nm.

Lasing in strongly scattering dielectric microstructures

NASA Astrophysics Data System (ADS)

Florescu, Lucia

In the first part of this thesis, a detailed analysis of lasing in random multiple-light-scattering media with gain is presented. Random laser emission is analyzed using a time-dependent diffusion model for light propagating in the medium containing active atoms. We demonstrate the effects of scatterers to narrow the emission spectral linewidth and to shorten the emitted pulse duration at a specific threshold pump intensity. This threshold pump intensity decreases with scatterer density and excitation spot diameter, in excellent agreement with experimental results. The coherence properties of the random laser are studied using a generalized master equation. The random laser medium is treated as a collection of low quality-factor cavities, coupled by random photon diffusion. Laser-like coherence, on average, is demonstrated above a specific pumping threshold. We demonstrate that with stronger scattering, the pumping threshold for the transition from chaotic to isotropic coherent light emission decreases and enhanced optical coherence for the emitted light is achieved above threshold. The second part of this thesis presents a study of lasing in photonic crystals (PCs). The emission from an incoherently pumped atomic system in interaction with the electro-magnetic reservoir of a PC is analyzed using a set of generalized semiclassical Maxwell-Bloch equations. We demonstrate that the photonic band edge facilitates the enhancement of stimulated emission and the reduction of internal losses, leading to an important lowering of the laser threshold. In addition, an increase of the laser output at a photonic band edge is demonstrated. We next develop a detailed quantum theory of a coherently pumped two-level atom in a photonic band gap material, coupled to both a multi-mode wave-guide channel and a high-quality micro-cavity embedded within the PC. The cavity field characteristics are highly distinct from that of a corresponding high-Q cavity in ordinary vacuum. We demonstrate enhanced, inversionless, and nearly coherent light generation when the photon density of states (DOS) jump between the Mollow spectral components of atomic resonance fluorescence is large. In the case of a vanishing photon DOS on the lower Mollow sideband and no dipolar dephasing, the emitted photon statistics is Poissonian and the cavity field exhibits quadrature coherence.

Dynamics of a multimode semiconductor laser with optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koryukin, I. V.

A new model of a multi-longitudinal-mode semiconductor laser with weak optical feedback is proposed. This model generalizes the well-known Tang-Statz-deMars equations, which are derived from the first principles and adequately describe solid-state lasers to a semiconductor active medium. Steady states of the model and the spectrum of relaxation oscillations are found, and the laser dynamics in the chaotic regime of low-frequency fluctuations of intensity is investigated. It is established that the dynamic properties of the proposed model depend mainly on the carrier diffusion, which controls mode-mode coupling in the active medium via spread of gratings of spatial inversion. The resultsmore » obtained are compared with the predictions of previous semiphenomenological models and the scope of applicability of these models is determined.« less

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Brebrick, Robert F.; Burger, Arnold; Dudley, Michael; Matyi, Richard J.; Ramachandran, Narayanan; Sha, Yi-Gao; Volz, Martin; Shih, Hung-Dah

2000-01-01

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

Multi-wavelength laser emission in dye-doped photonic liquid crystals.

PubMed

Wang, Chun-Ta; Lin, Tsung-Hsien

2008-10-27

Multi-wavelength lasing in a dye-doped cholesteric liquid crystal (CLC) cell is demonstrated. By adding oversaturated chiral dopant, the multi-photonic band CLC structure can be obtained with non-uniform chiral solubility. Under appropriate excitation, multi-wavelength lasing can be achieved with a multi-photonic band edge CLC structure. The number of lasing wavelengths can be controlled under various temperature processes. Nine wavelength CLC lasings were observed simultaneously. The wavelength range covers around 600-675nm. Furthermore, reversible tuning of multi-wavelength lasing was achieved by controlling CLC device temperature.

Freedom from band-gap slavery: from diode lasers to quantum cascade lasers

NASA Astrophysics Data System (ADS)

Capasso, Federico

2010-02-01

Semiconductor heterostructure lasers, for which Alferov and Kromer received part of the Nobel Prize in Physics in 2000, are the workhorse of technologies such as optical communications, optical recording, supermarket scanners, laser printers and fax machines. They exhibit high performance in the visible and near infrared and rely for their operation on electrons and holes emitting photons across the semiconductor bandgap. This mechanism turns into a curse at longer wavelengths (mid-infrared) because as the bandgap, shrinks laser operation becomes much more sensitive to temperature, material defects and processing. Quantum Cascade Laser (QCL), invented in 1994, rely on a radically different process for light emission. QCLs are unipolar devices in which electrons undergo transitions between quantum well energy levels and are recycled through many stages emitting a cascade of photons. Thus by suitable tailoring of the layers' thickness, using the same heterostructure material, they can lase across the molecular fingerprint region from 3 to 25 microns and beyond into the far-infrared and submillimiter wave spectrum. High power cw room temperature QCLs and QCLs with large continuous single mode tuning range have found many applications (infrared countermeasures, spectroscopy, trace gas analysis and atmospheric chemistry) and are commercially available. )

Two-dimensional CdS nanosheet-based TFT and LED nanodevices.

PubMed

Ye, Yu; Yu, Bin; Gao, Zhiwei; Meng, Hu; Zhang, Hui; Dai, Lun; Qin, Guogang

2012-05-17

Semiconductor nanosheets have several unique applications in electronic and optoelectronic nanodevices. We have successfully synthesized single-crystalline n-type CdS nanosheets via a chemical vapor deposition (CVD) method in a Cd-enriched ambient. The as-synthesized nanosheets are typically 40-100 nm thick, 10-300 µm wide, and up to several millimeters long. Using the nanosheets, we fabricated for the first time (to our knowledge), nano thin-film transistors (nano-TFTs) based on individual CdS nanosheets. A typical unit of such nanosheet TFTs has a high on-off ratio (∼1.7 ×10(9)) and peak transconductance (∼14.1µS), which to our knowledge are the best values reported so far for semiconductor nano-TFTs. In addition, we fabricated n-CdS nanosheet/p(+)-Si heterojunction light emitting diodes (LEDs) with a top electrode structure. This structure, where the n-type electrode is directly above the junction, has the advantage of a large active region and injection current favorable for high-efficiency electroluminescence (EL) and lasing. Room-temperature spectra of the LEDs consist of only an intense CdS band-edge emission peak (∼507.7 nm) with a full width at half-maximum of about 14 nm.

Perovskite photonic sources

NASA Astrophysics Data System (ADS)

Sutherland, Brandon R.; Sargent, Edward H.

2016-05-01

The field of solution-processed semiconductors has made great strides; however, it has yet to enable electrically driven lasers. To achieve this goal, improved materials are required that combine efficient (>50% quantum yield) radiative recombination under high injection, large and balanced charge-carrier mobilities in excess of 10 cm2 V-1 s-1, free-carrier densities greater than 1017 cm-3 and gain coefficients exceeding 104 cm-1. Solid-state perovskites are -- in addition to galvanizing the field of solar electricity -- showing great promise in photonic sources, and may be the answer to realizing solution-cast laser diodes. Here, we discuss the properties of perovskites that benefit light emission, review recent progress in perovskite electroluminescent diodes and optically pumped lasers, and examine the remaining challenges in achieving continuous-wave and electrically driven lasing.

Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cilibrizzi, Pasquale; Askitopoulos, Alexis, E-mail: Alexis.Askitopoulos@soton.ac.uk; Silva, Matteo

2014-11-10

The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates,more » providing a platform for on chip quantum simulations.« less

Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires

NASA Astrophysics Data System (ADS)

Kaveh Baghbadorani, Masoud

In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs nanowire (NW) surfaces were investigated. Optical characterizations were carried out as a function of the semiconductor NW material, design, NW size and the type and thickness of the organic material and metal used. Hybrid organic and plasmonic semiconductor nanowire heterostructures were fabricated using organic molecular beam deposition technique. I investigated the photon emission of excitons in 150 nm diameter polytype wurtzite/zincblende InP NWs and the influence of a few ten nanometer thick organic and metal films on the emission using intensity- and temperature-dependent time-integrated and time resolved (TR) photoluminescence (PL). The plasmonic NWs were coated with an Aluminum quinoline (Alq3) interlayer and magnesium-silver (Mg0.9:Ag0.1) top layer. In addition, the nonlinear optical technique of heterodyne four-wave mixing was used (in collaboration with Prof. Wolfgang Langbein, University of Cardiff) to study incoherent and coherent carrier relaxation processes on bare nanowires on a 100 femtosecond time-scale. Alq3 covered NWs reveal a stronger emission and a longer decay time of exciton transitions indicating surface state passivation at the Alq3/NW interface. Alq3/Mg:Ag NWs reveal a strong quenching of the exciton emission which is predominantly attributed to Forster energy-transfer from excitons to plasmon oscillations in the metal cluster film. Changing the Mg:Ag to gold and the organic Alq3 spacer layer to PTCDA leads to a similar behavior, but the PL quenching is strongly increased. The observed behavior is attributed to a more continuous gold deposition leading to an increased Forster energy transfer and to a metal induced band-bending. I also investigated ensembles of bare and gold/Alq3 coated GaAs-AlGaAs-GaAs core shell NWs of 130 nm diameter. Plasmonic NWs with Au coating reveal a significant reduction of the PL intensity compared with the uncoated NWs. Organic-plasmonic NWs with an additional Alq3 interlayer show a noticeably stronger PL intensity which increases with rising Alq3 spacer thickness. Metal induced band bending is mainly attributed to be responsible for the PL quenching. TR PL measurements support our interpretation by showing an increase in the exciton decay times as we increase the spacer thickness. Au coated NWs also reveal a strong polarization dependent absorption which is mainly due to the significant dielectric mismatch between the nanowires and the adjacent vacuum environment. Finally, the amplified spontaneous emission (ASE) and possible plasmonic NW lasing from hybrid plasmonic core-shell GaAs NW heterostructures was investigated. The plasmonic heterostructures are composed of either bare NWs on an Au coated glass substrate or Au coated NWs on a bare glass substrate. Intensity-dependent PL on plasmonic NW samples reveals a super linear increase of the PL intensities which is attributed to an ASE at a threshold energy fluence of 1 GW/cm 2. Measurements above the threshold power reveal few weakly resolved broad bands around the maximum emission of the PL band which suggest plasmonic film induced lasing. This interpretation is supported by the fact that lasing from such 100 nm narrow uncoated GaAs NWs is not possible.

Mechanochemical activation and gallium and indiaarsenides surface catalycity

NASA Astrophysics Data System (ADS)

Kirovskaya, I. A.; Mironova, E. V.; Umansky, I. V.; Brueva, O. Yu; Murashova, A. O.; Yureva, A. V.

2018-01-01

The present work has been carried out in terms of determining the possibilities for a clearer identification of the active sites nature, intermediate surface compounds nature, functional groups during adsorption and catalysis, activation of the diamond-like semiconductors surface (in particular, the AIIIBV type) based on mechanochemical studies of the “reaction medium (H2O, iso-C3H7OH) - dispersible semiconductor (GaAs, InAs)” systems. As a result, according to the read kinetic curves of dispersion in water, both acidification and alkalinization of the medium have been established and explained; increased activity of the newly formed surface has been noted; intermediate surface compounds, functional groups appearing on the real surface and under H2O adsorption conditions, adsorption and catalytic decomposition of iso-C3H7OH have been found (with explanation of the origin). The unconcealed role of coordinatively unsaturated atoms as active sites of these processes has been shown; the relative catalytic activity of the semiconductors studied has been evaluated. Practical recommendations on the preferred use of gallium arsenide in semiconductor gas analysis and semiconductor catalysis have been given in literature searches, great care should be taken in constructing both.

Modeling techniques for quantum cascade lasers

NASA Astrophysics Data System (ADS)

Jirauschek, Christian; Kubis, Tillmann

2014-03-01

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation of quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.

Modeling techniques for quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jirauschek, Christian; Kubis, Tillmann

2014-03-15

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation ofmore » quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.« less

Diode-pumped high power 2.7 μm Er:Y2O3 ceramic laser at room temperature

NASA Astrophysics Data System (ADS)

Wang, Li; Huang, Haitao; Shen, Deyuan; Zhang, Jian; Chen, Hao; Tang, Dingyuan

2017-09-01

Investigation of room temperature laser performance of the polycrystalline Er:Y2O3 ceramic at 2.7 μm with respect to dopant concentrations was conducted. With 7 at.% Er3+ concentration Er:Y2O3 ceramic as laser gain medium, over 2.05 W of CW output power at 2.7 μm was generated with a slope efficiency of 11.1% with respect to the absorbed LD pump power. The prospects for improvement in lasing efficiency and output power are considered.

Ultra-broad range organic solid-state laser from a dye-doped holographic grating quasi-waveguide configuration

NASA Astrophysics Data System (ADS)

Liu, Minghuan; Liu, Yonggang; Peng, Zenghui; Mu, Quanquan; Cao, Zhaoliang; Lu, Xinghai; Ma, Ji; Xuan, Li

2017-08-01

This paper reports the ultra-broad 149.1 nm lasing emission from 573.2 to 722.3 nm using a simple [4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran] (DCM)-doped holographic polymer-dispersed liquid crystal (HPDLC) grating quasi-waveguide configuration by varying the grating period. The lasing emission beams show s-polarization property. The quasi-waveguide structure, which contained the cover glass, the DCM-doped HPDLC grating, the semiconducting polymer film poly[-methoxy-5-(2‧-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV), and the substrate were confirmed to decrease lasing threshold and broaden lasing wavelength. The operational lifetime of the device is 240 000 pulses, which corresponds to an overall laser duration of more than 6 h at a repetition rate of 10 Hz. In addition, the dual-wavelength lasing range from the 8th and 9th order is over 40 nm. The electrical tunability of the dual-wavelength lasing emission is over 1 nm. The experimental results facilitated the decreased lasing threshold and broadened lasing wavelength range of organic solid-state lasers.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

PubMed

Wen, Boyu; Xu, Chao; Wang, Siyi; Wang, Kaixi; Tam, Man Chun; Wasilewski, Zbig; Ban, Dayan

2018-04-02

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al 0.17 Ga 0.83 As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm 2 at 50K) of GaAs/Al x Ga 1-x As material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.

Tunable random lasing behavior in plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Yadav, Ashish; Zhong, Liubiao; Sun, Jun; Jiang, Lin; Cheng, Gary J.; Chi, Lifeng

2017-01-01

Random lasing is desired in plasmonics nanostructures through surface plasmon amplification. In this study, tunable random lasing behavior was observed in dye molecules attached with Au nanorods (NRs), Au nanoparticles (NPs) and Au@Ag nanorods (NRs) respectively. Our experimental investigations showed that all nanostructures i.e., Au@AgNRs, AuNRs & AuNPs have intensive tunable spectral effects. The random lasing has been observed at excitation wavelength 532 nm and varying pump powers. The best random lasing properties were noticed in Au@AgNRs structure, which exhibits broad absorption spectrum, sufficiently overlapping with that of dye Rhodamine B (RhB). Au@AgNRs significantly enhance the tunable spectral behavior through localized electromagnetic field and scattering. The random lasing in Au@AgNRs provides an efficient coherent feedback for random lasers.

Lasing in chiral photonic liquid crystals and associated frequency tuning.

PubMed

Fuh, Andy; Lin, Tsung-Hsien; Liu, J-H; Wu, F-C

2004-05-03

This letter addresses a dye-doped planar cholesteric cell as a one-dimensional photonic crystal, which can be lased at the band edges of the photonic band gap. The effect of the composition of the material and the thickness of a cholesteric cell (CLC) on the lasing action, and the photo-control of the lasing frequency, are experimentally investigated. Adding a tunable chiral monomer (TCM) allows the CLC's reflection band to be tuned by varying the intensity and/or exposure time of the UV curing light, enabling the lasing frequency of the CLC sample to be tuned.

LASE measurements of water vapor, aerosol, and cloud distribution in hurricane environments and their role in hurricane development

NASA Technical Reports Server (NTRS)

Mahoney, M. J.; Ismail, S.; Browell, E. V.; Ferrare, R. A.; Kooi, S. A.; Brasseur, L.; Notari, A.; Petway, L.; Brackett, V.; Clayton, M.;

Gas laser with dual plasma mixing

DOEpatents

Pinnaduwage, L.A.

1999-04-06

A gas laser includes an enclosure forming a first chamber, a second chamber and a lasing chamber which communicates through a first opening to the first chamber and through a second opening to the second chamber. The lasing chamber has a pair of reflectors defining a Fabry-Perot cavity. Separate inlets enable different gases to be introduced into the first and second chambers. A first cathode within the first chamber is provided to produce positive ions which travel into the lasing chamber and a second cathode of a pin-hollow type within the second chamber is provided to produce negative ions which travel into the lasing chamber. A third inlet introduces a molecular gas into the lasing chamber, where the molecular gas becomes excited by the positive and negative ions and emits light which lases in the Fabry-Perot cavity. 2 figs.

Gas laser with dual plasma mixing

DOEpatents

Pinnaduwage, Lal A.

1999-01-01

A gas laser includes an enclosure forming a first chamber, a second chamber and a lasing chamber which communicates through a first opening to the first chamber and through a second opening to the second chamber. The lasing chamber has a pair of reflectors defining a Fabry-Perot cavity. Separate inlets enable different gases to be introduced into the first and second chambers. A first cathode within the first chamber is provided to produce positive ions which travel into the lasing chamber and a second cathode of a pin-hollow type within the second chamber is provided to produce negative ions which travel into the lasing chamber. A third inlet introduces a molecular gas into the lasing chamber, where the molecular gas becomes excited by the positive and negative ions and emits light which lases in the Fabry-Perot cavity.

Laser rods with undoped, flanged end-caps for end-pumped laser applications

DOEpatents

Meissner, H.E.; Beach, R.J.; Bibeau, C.; Sutton, S.B.; Mitchell, S.; Bass, I.; Honea, E.

1999-08-10

A method and apparatus for achieving improved performance in a solid state laser is provided. A flanged, at least partially undoped end-cap is attached to at least one end of a laserable medium. Preferably flanged, undoped end-caps are attached to both ends of the laserable medium. Due to the low scatter requirements for the interface between the end-caps and the laser rod, a non-adhesive method of bonding is utilized such as optical contacting combined with a subsequent heat treatment of the optically contacted composite. The non-bonded end surfaces of the flanged end-caps are coated with laser cavity coatings appropriate for the lasing wavelength of the laser rod. A cooling jacket, sealably coupled to the flanged end-caps, surrounds the entire length of the laserable medium. Radiation from a pump source is focused by a lens duct and passed through at least one flanged end-cap into the laser rod. 14 figs.

Optimizing the 391-nm lasing intensity from ionized nitrogen molecules in 800-nm femtosecond laser fields

NASA Astrophysics Data System (ADS)

Zhong, Xunqi; Miao, Zhiming; Zhang, Linlin; Jiang, Hongbing; Liu, Yunquan; Gong, Qihuang; Wu, Chengyin

2018-03-01

We investigate the 391-nm lasing dynamics from ionized nitrogen molecules in 800-nm femtosecond laser fields. By comparing the radiation intensity, spectrum shape, and temporal profile of the 391-nm lasing at various experimental conditions, we conclude that the lasing dynamics contains not only the generation and the decay of ionized nitrogen molecules, but also the seed-built coherence among emitters as well as the propagation effect in the plasma filamentation. These results provide reliable guidance for optimizing the 391-nm lasing from ionized nitrogen molecules in 800-nm femtosecond laser fields, which have potential applications for remote sensing in the atmosphere.

Cascaded Brillouin lasing in monolithic barium fluoride whispering gallery mode resonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Guoping, E-mail: guoping.lin@femto-st.fr; Diallo, Souleymane; Saleh, Khaldoun

2014-12-08

We report the observation of stimulated Brillouin scattering and lasing at 1550 nm in barium fluoride (BaF{sub 2}) crystal. Brillouin lasing was achieved with ultra-high quality (Q) factor monolithic whispering gallery mode mm-size disk resonators. Overmoded resonators were specifically used to provide cavity resonances for both the pump and all Brillouin Stokes waves. Single and multiple Brillouin Stokes radiations with frequency shift ranging from 8.2 GHz up to 49 GHz have been generated through cascaded Brillouin lasing. BaF{sub 2} resonator-based Brillouin lasing can find potential applications for high-coherence lasers and microwave photonics.

Hybrid Multilayered Plasmonic Nanostars for Coherent Random Lasing.

PubMed

Munkhbat, Battulga; Ziegler, Johannes; Pöhl, Hannes; Wörister, Christian; Sivun, Dmitry; Scharber, Markus C; Klar, Thomas A; Hrelescu, Calin

2016-10-20

Here, we report that hybrid multilayered plasmonic nanostars can be universally used as feedback agents for coherent random lasing in polar or nonpolar solutions containing gain material. We show that silver-enhancement of gold nanostars reduces the pumping threshold for coherent random lasing substantially for both a typical dye (R6G) and a typical fluorescent polymer (MEH-PPV). Further, we reveal that the lasing intensity and pumping threshold of random lasers based on silver-enhanced gold nanostars are not influenced by the silica coating, in contrast to gold nanostar-based random lasers, where silica-coated gold nanostars support only amplified spontaneous emission but no coherent random lasing.

Development of the Lidar Atmospheric Sensing Experiment (LASE): An Advanced Airborne DIAL Instrument

NASA Technical Reports Server (NTRS)

Moore, Alvah S., Jr.; Brown, Kevin E.; Hall, William M.; Barnes, James C.; Edwards, William C.; Petway, Larry B.; Little, Alan D.; Luck, William S., Jr.; Jones, Irby W.; Antill, Charles W., Jr.

1997-01-01

The Lidar Atmospheric Sensing Experiment (LASE) Instrument is the first fully-engineered, autonomous Differential Absorption Lidar (DIAL) System for the measurement of water vapor in the troposphere (aerosol and cloud measurements are included). LASE uses a double-pulsed Ti:Sapphire laser for the transmitter with a 30 ns pulse length and 150 mJ/pulse. The laser beam is "seeded" to operate on a selected water vapor absorption line in the 815-nm region using a laser diode and an onboard absorption reference cell. A 40 cm diameter telescope collects the backscattered signals and directs them onto two detectors. LASE collects DIAL data at 5 Hz while onboard a NASA/Ames ER-2 aircraft flying at altitudes from 16-21 km. LASE was designed to operate autonomously within the environment and physical constraints of the ER-2 aircraft and to make water vapor profile measurements across the troposphere to better than 10% accuracy. LASE has flown 19 times during the development of the instrument and the validation of the science data. This paper describes the design, operation, and reliability of the LASE Instrument.

Characterization of Upper Troposphere Water Vapor Measurements during AFWEX using LASE

NASA Technical Reports Server (NTRS)

Ferrare, R. A.; Browell, E. V.; Ismail, S.; Kooi, S.; Brasseur, L. H.; Brackett, V. G.; Clayton, M.; Barrick, J.; Linne, H.; Lammert, A.

2002-01-01

Water vapor profiles from NASA's Lidar Atmospheric Sensing Experiment (LASE) system acquired during the ARM/FIRE Water Vapor Experiment (AFWEX) are used to characterize upper troposphere water vapor (UTWV) measured by ground-based Raman lidars, radiosondes, and in situ aircraft sensors. Initial comparisons showed the average Vaisala radiosonde measurements to be 5-15% drier than the average LASE, Raman lidar, and DC-8 in situ diode laser hygrometer measurements. We show that corrections to the Raman lidar and Vaisala measurements significantly reduce these differences. Precipitable water vapor (PWV) derived from the LASE water vapor profiles agrees within 3% on average with PWV derived from the ARM ground-based microwave radiometer (MWR). The agreement among the LASE, Raman lidar, and MWR measurements demonstrates how the LASE measurements can be used to characterize both profile and column water vapor measurements and that ARM Raman lidar, when calibrated using the MWR PWV, can provide accurate UTWV measurements.

Room temperature high circular dichroism ultraviolet lasing from planar spiral metal-GaN nanowire cavity (Conference Presentation)

NASA Astrophysics Data System (ADS)

Shih, Min-Hsiung

2016-09-01

Circularly polarized light and chiroptical effect have received considerable attention in advanced photonic and electronic technologies including optical spintronics, quantum-based optical information processing and communication, and high-efficiency liquid crystal display backlights. Moreover, the development of circularly polarized photon sources has played a major role in circular dichroism (CD) spectroscopy, which is important for analyses of optically active molecules, chiral synthesis in biology and chemistry, and ultrafast magnetization control. However, the conventional collocation of light-emitting devices and additional circular-polarization converters that produce circularly polarized beams makes the setup bulky and hardly compatible with nanophotonic devices in ultrasmall scales. In fact, the direct generation of circularly polarized photons may simplify the system integration, compact the setup, lower the cost of external components, and perhaps enhance the power efficiency. In this work, with the spiral-type metal-gallium nitride (GaN) nanowire cavity, we demonstrated an ultrasmall semiconductor laser capable of emitting circularly-polarized photons. The left- and right-hand spiral metal nanowire cavities with varied periods were designed at ultraviolet wavelengths to achieve the high quality factor circular dichroism metastructures. The dissymmetry factors characterizing the degrees of circular polarizations of the left- and right-hand chiral lasers were 1.4 and -1.6 (2 if perfectly circular polarized), respectively. The results show that the chiral cavities with only 5 spiral periods can achieve lasing signals with decently high degrees of circular polarizations.

PREFACE: Proceedings of the First Workshop of the EU RT Network `Photon-Mediated Phenomena in Semiconductor Nanostructures' (Gregynog, Wales, UK, 28--31 March 2003)

NASA Astrophysics Data System (ADS)

Ivanov, Alexei L.

2004-09-01

The EU Research Training Network `Photon-Mediated Phenomena in Semiconductor Nanostructures' (HPRN-CT-2002-00298) comprises seven teams from across Europe: Cambridge, Cardiff, Dortmund, Heraklion, Grenoble, Lund and Paderborn (for details see the Network website http://www.astro.cardiff.ac.uk/research/PMPnetwork/index.html). The first workshop of the Network was held at Gregynog Hall, a conference centre in the beautiful countryside of mid-Wales. There were 44 participants who attended the meeting (7 from France, 2 from Japan, 3 from Germany, 1 from Greece, 2 from Russia, 3 from Sweden, 23 from UK and 3 from USA). Of these, 57% were students and young postdoctoral research associates. The talks presented at the meeting were mainly devoted to linear and nonlinear optics of semiconductor nanostructures. Thus the review and research papers included in this special issue of Journal of Physics: Condensed Matter deal with the exciton-mediated optical phenomena in semiconductor quantum wires, quantum wells, planar and spherical microcavities and self-assembled quantum dots. The specific topics covered by the proceedings are exciton-mediated optics, including lasing, of semiconductor quantum wires Bose-Einstein condensation of excitons and microcavity polaritons diffusion, thermalization and photoluminescence of free carriers and excitons in GaAs coupled quantum wells polaritons in semiconductor microcavities exciton-mediated optics of semiconductor photonic dots optical nonlinearities of biexciton waves optics of self-assembled quantum dots photosensitive metal oxides films On the first day of the workshop, a special session on presentation skills, lead by Mike Edmunds, was organized for the young researchers. The meeting concluded with a round-table discussion at which key questions on research, organization and management of the Network were identified and discussed. The second workshop of the Network, organized and chaired by George Kiriakidis, took place at Hersonissos (Crete, Greece) in October 2003. The forthcoming third workshop, organized by Detlef Schikora and Ulrike Woggon, will be held in Paderborn (conference part) and Dortmund (training part) from 4 October 4 through 7 October 2004 (for details visit the Network website). Finally, I would like to thank my colleagues, Celestino Creatore, Nikolay Nikolaev, Lois Smallwood and Andrew Smith, for their help with preparation of the Proceedings.

Characteristics of unstable resonators in flashlamp-pumped organic-compound lasers

NASA Astrophysics Data System (ADS)

Alekseyev, V. A.; Trinchuk, B. F.; Shulenin, A. V.

1985-01-01

A symmetrical confocal resonator formed by two blind convex mirrors was investigated. The space energy characteristics of radiation from a laser with an unstable resonator were investigated as a function of the specific pumping energy per cubic centimeter of active medium and the magnification of the resonator. Oscillograms of laser pulses were recorded in different cross sections of the laser beam, as were the lasing field patterns at various distances from the exit mirror of the resonator. The maximum spectral wavelengths of flat and unstable resonators were tabulated. It was found that the proper choice of parameters of an unstable resonator reduces laser beam divergence significantly and provides greater axial brightness of radiation than that provided by a flat resonator, even with a highly nonhomogeneous active medium, making it possible to extend the capabilities of flashlamp pumped organic compound lasers.

Bleaching and enamel surface interactions resulting from the use of highly-concentrated bleaching gels.

PubMed

Grazioli, Guillermo; Valente, Lisia Lorea; Isolan, Cristina Pereira; Pinheiro, Helena Alves; Duarte, Camila Gonçalves; Münchow, Eliseu Aldrighi

2018-03-01

Tooth bleaching is considered a non-invasive treatment, although the use of highly-concentrated products may provoke increased surface roughness and enamel demineralization, as well as postoperative sensitivity. Thus, the aim of this study was to investigate whether hydrogen peroxide (H 2 O 2 ) concentration would affect tooth bleaching effectiveness and the enamel surface properties. Enamel/dentin bovine specimens (6 × 4 mm) were immersed in coffee solution for 7 days and evaluated with a spectrophotometer (Easyshade; baseline), using the CIEL * a * b * color parameters. Hardness was measured using a hardness tester. The specimens were randomly assigned into four groups: one negative control, in which the specimens were not bleached, but they were irradiated with a laser-light source (Whitening Lase II, DMC Equipments); and three groups using distinct H 2 O 2 concentration, namely LP15% (15% Lase Peroxide Lite), LP25% (25% Lase Peroxide Sensy), and LP35% (35% Lase Peroxide Sensy), all products from DMC. The bleached specimens were also irradiated with the laser-light source. After bleaching, all specimens were evaluated using scanning electron microscopy (SEM). pH kinetics and rate was monitored during bleaching. The data were analyzed using ANOVA and Tukey's test (p < 0.05). All bleaching gels produced similar color change (p > 0.05). Concerning hardness, only the LP25% and LP35% significantly reduced hardness after bleaching; also, there was a progressive tendency for a greater percentage reduction in hardness with increased H 2 O 2 concentration of the gel (R 2  = 0.9973, p < 0.001). SEM showed that LP25% and LP35% produced an etching pattern on enamel with prism rods exposure. In conclusion, H 2 O 2 concentration above the 15% level does not increase bleaching effectiveness, and may increase the possibility for alteration of enamel hardness, surface morphology, and acidity of the medium. When using H 2 O 2 -based bleaching agents, dental practitioners should choose for less concentrated gels, e.g., around the 15% level. Copyright © 2017 Elsevier Ltd. All rights reserved.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Degradation phenomena in laser diodes

NASA Astrophysics Data System (ADS)

Beister, G.; Krispin, P.; Maege, J.; Richter, G.; Weber, H.; Rechenberg, I.

1988-11-01

Accelerated tests on GaAlAs/GaAs double heterostructure laser diodes showed, in agreement with earlier results on light-emitting diodes, that ageing appeared in three distinct forms: initial and slow degradation stages, both obeying a logarithmic time dependence, and a superimposed "gradation" (enhancement of the output power). Measurements made by the method of deep level transient spectroscopy during the accelerated tests on these lasers, operated as light-emitting diodes, revealed the appearance right from the beginning of B levels attributed to the antisite GaAs defects. The B levels appeared again in diodes tested in the lasing mode. In the case of a group of 21 laser diodes the mean time-to-failure was 9000 h at 70°C for 5 mW (in accordance with the Weibull statistics of degradation rates).

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator.

PubMed

Kim, Hyunseok; Lee, Wook-Jae; Farrell, Alan C; Balgarkashi, Akshay; Huffaker, Diana L

2017-09-13

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers

NASA Astrophysics Data System (ADS)

Maximov, M. V.; Shernyakov, Yu M.; Zubov, F. I.; Zhukov, A. E.; Gordeev, N. Yu; Korenev, V. V.; Savelyev, A. V.; Livshits, D. A.

2013-10-01

Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths and temperatures. Modulation doping of the active region strongly enhances the threshold current of two-state lasing, preserves ground-state lasing up to higher temperatures and increases ground-state output power. The impact of modulation doping is especially strong in short cavities.

Continuous two-wave lasing in microchip Nd : YAG lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ievlev, Ivan V; Koryukin, Igor' V; Lebedeva, Yu S

2011-08-31

Simultaneous two-wave lasing was obtained in microchip end-pumped Nd:YAG lasers at the wavelengths of 1061.5 and 1064.17 nm at room temperature. Laser wave intensities were studied as functions of crystal temperature and pump power. The ranges of parameters were determined in which the two-wave lasing occurs and the reasons for such lasing were established. A model is suggested, which adequately describes the experimental results obtained. (control of radiation parameters)

Excitonic lasing in solution-processed subwavelength nanosphere assemblies

DOE PAGES

Appavoo, Kannatassen; Liu, Xiaoze; Menon, Vinod; ...

2016-02-03

Lasing in solution-processed nanomaterials has gained significant interest because of the potential for low-cost integrated photonic devices. Still, a key challenge is to utilize a comprehensive knowledge of the system’s spectral and temporal dynamics to design low-threshold lasing devices. Here, we demonstrate intrinsic lasing (without external cavity) at low-threshold in an ultrathin film of coupled, highly crystalline nanospheres with overall thickness on the order of ~λ/4. The cavity-free geometry consists of ~35 nm zinc oxide nanospheres that collectively localize the in-plane emissive light fields while minimizing scattering losses, resulting in excitonic lasing with fluence thresholds at least an order ofmore » magnitude lower than previous UV-blue random and quantum-dot lasers (<75 μJ/cm 2). Fluence-dependent effects, as quantified by subpicosecond transient spectroscopy, highlight the role of phonon-mediated processes in excitonic lasing. Subpicosecond evolution of distinct lasing modes, together with three-dimensional electromagnetic simulations, indicate a random lasing process, which is in violation of the commonly cited criteria of strong scattering from individual nanostructures and an optically thick sample. Subsequently, an electron–hole plasma mechanism is observed with increased fluence. Furthermore, these results suggest that coupled nanostructures with high crystallinity, fabricated by low-cost solution-processing methods, can function as viable building blocks for high-performance optoelectronics devices.« less

Direct conversion semiconductor detectors in positron emission tomography

NASA Astrophysics Data System (ADS)

Cates, Joshua W.; Gu, Yi; Levin, Craig S.

2015-05-01

Semiconductor detectors are playing an increasing role in ongoing research to improve image resolution, contrast, and quantitative accuracy in preclinical applications of positron emission tomography (PET). These detectors serve as a medium for direct detection of annihilation photons. Early clinical translation of this technology has shown improvements in image quality and tumor delineation for head and neck cancers, relative to conventional scintillator-based systems. After a brief outline of the basics of PET imaging and the physical detection mechanisms for semiconductor detectors, an overview of ongoing detector development work is presented. The capabilities of semiconductor-based PET systems and the current state of these devices are discussed.

Weak lasing in one-dimensional polariton superlattices.

PubMed

Zhang, Long; Xie, Wei; Wang, Jian; Poddubny, Alexander; Lu, Jian; Wang, Yinglei; Gu, Jie; Liu, Wenhui; Xu, Dan; Shen, Xuechu; Rubo, Yuri G; Altshuler, Boris L; Kavokin, Alexey V; Chen, Zhanghai

2015-03-31

Bosons with finite lifetime exhibit condensation and lasing when their influx exceeds the lasing threshold determined by the dissipative losses. In general, different one-particle states decay differently, and the bosons are usually assumed to condense in the state with the longest lifetime. Interaction between the bosons partially neglected by such an assumption can smear the lasing threshold into a threshold domain--a stable lasing many-body state exists within certain intervals of the bosonic influxes. This recently described weak lasing regime is formed by the spontaneously symmetry breaking and phase-locking self-organization of bosonic modes, which results in an essentially many-body state with a stable balance between gains and losses. Here we report, to our knowledge, the first observation of the weak lasing phase in a one-dimensional condensate of exciton-polaritons subject to a periodic potential. Real and reciprocal space photoluminescence images demonstrate that the spatial period of the condensate is twice as large as the period of the underlying periodic potential. These experiments are realized at room temperature in a ZnO microwire deposited on a silicon grating. The period doubling takes place at a critical pumping power, whereas at a lower power polariton emission images have the same periodicity as the grating.

Explosive laser

DOEpatents

Robinson, C.P.; Jensen, R.J.; Davis, W.C.; Sullivan, J.A.

1975-09-01

This patent relates to a laser system wherein reaction products from the detonation of a condensed explosive expand to form a gaseous medium with low translational temperature but high vibration population. Thermal pumping of the upper laser level and de-excitation of the lower laser level occur during the expansion, resulting in a population inversion. The expansion may be free or through a nozzle as in a gas-dynamic configuration. In one preferred embodiment, the explosive is such that its reaction products are CO$sub 2$ and other species that are beneficial or at least benign to CO$sub 2$ lasing. (auth)

Lasing of a Solid-State Active Element Based on Anodized Aluminum Oxide Film Doped with Rhodamine 6G

NASA Astrophysics Data System (ADS)

Shelkovnikov, V. V.; Lyubas, G. A.; Korotaev, S. V.; Kopylova, T. N.; Tel'minov, E. N.; Gadirov, R. M.; Nikonova, E. N.; Nikonov, S. Yu.; Solodova, T. A.; Novikov, V. A.

2017-04-01

Spectral-luminescent and lasing characteristics of rhodamine 6G in porous aluminum oxide films anodized under various conditions are investigated. Lasing is obtained without external resonator in the longitudinal scheme under excitation by the second harmonic of Nd3+:YAG-laser radiation. The threshold pump power densities are in the range 3.5-15 MW/cm2 depending on the anodizing conditions. Wherein, the lasing line narrows down from 12 to 5 nm.

Random lasing in dye-doped polymer dispersed liquid crystal film

NASA Astrophysics Data System (ADS)

Wu, Rina; Shi, Rui-xin; Wu, Xiaojiao; Wu, Jie; Dai, Qin

2016-09-01

A dye-doped polymer-dispersed liquid crystal film was designed and fabricated, and random lasing action was studied. A mixture of laser dye, nematic liquid crystal, chiral dopant, and PVA was used to prepare the dye-doped polymer-dispersed liquid crystal film by means of microcapsules. Scanning electron microscopy analysis showed that most liquid crystal droplets in the polymer matrix ranged from 30 μm to 40 μm, the size of the liquid crystal droplets was small. Under frequency doubled 532 nm Nd:YAG laser-pumped optical excitation, a plurality of discrete and sharp random laser radiation peaks could be measured in the range of 575-590 nm. The line-width of the lasing peak was 0.2 nm and the threshold of the random lasing was 9 mJ. Under heating, the emission peaks of random lasing disappeared. By detecting the emission light spot energy distribution, the mechanism of radiation was found to be random lasing. The random lasing radiation mechanism was then analyzed and discussed. Experimental results indicated that the size of the liquid crystal droplets is the decisive factor that influences the lasing mechanism. The surface anchor role can be ignored when the size of the liquid crystal droplets in the polymer matrix is small, which is beneficial to form multiple scattering. The transmission path of photons is similar to that in a ring cavity, providing feedback to obtain random lasing output. Project supported by the National Natural Science Foundation of China (Grant No. 61378042), the Colleges and Universities in Liaoning Province Outstanding Young Scholars Growth Plans, China (Grant No. LJQ2015093), and Shenyang Ligong University Laser and Optical Information of Liaoning Province Key Laboratory Open Funds, China.

Single-shot stand-off chemical identification of powders using random Raman lasing

PubMed Central

Hokr, Brett H.; Bixler, Joel N.; Noojin, Gary D.; Thomas, Robert J.; Rockwell, Benjamin A.; Yakovlev, Vladislav V.; Scully, Marlan O.

2014-01-01

The task of identifying explosives, hazardous chemicals, and biological materials from a safe distance is the subject we consider. Much of the prior work on stand-off spectroscopy using light has been devoted to generating a backward-propagating beam of light that can be used drive further spectroscopic processes. The discovery of random lasing and, more recently, random Raman lasing provide a mechanism for remotely generating copious amounts of chemically specific Raman scattered light. The bright nature of random Raman lasing renders directionality unnecessary, allowing for the detection and identification of chemicals from large distances in real time. In this article, the single-shot remote identification of chemicals at kilometer-scale distances is experimentally demonstrated using random Raman lasing. PMID:25114231

Photoinduced charge carriers' accumulation and its impact on random lasing in Nd3+ doped (Pb,La)(Zr,Ti)O3 ceramics

NASA Astrophysics Data System (ADS)

Xu, Caixia; Zhang, Jingwen; Xu, Long; Ma, Xinyan; Zhao, Hua

2017-06-01

To pinpoint the driving forces behind the random lasing in Nd3+ doped lanthanum lead zirconate titanate (Nd:PLZT) ceramic plates, a combinatorial cavity with two gain media (Nd:YVO4 and Nd:PLZT) was used to study the switching feature between conventional lasing and random lasing oscillations. The complex laser output dynamics observed hinted that the photo-induced charge accumulation on the plate surface and the grain boundaries of Nd:PLZT is responsible for the lasing action switching, which was confirmed by a series of experiments, including strong electro-induced scattering, remarkable photoinduced currents, and light transmission reduction, along with measured single-pass-gain over the theoretical limit. It was found that the charge accumulation results in optical energy storage and nonuniform refractive index and hence strong scattering, which give rise to the random walks and weak localization of photons and long lasting lasing action and mode switching.

Lasing in a three-dimensional photonic crystal of the liquid crystal blue phase II.

PubMed

Cao, Wenyi; Muñoz, Antonio; Palffy-Muhoray, Peter; Taheri, Bahman

2002-10-01

Photonic-bandgap materials, with periodicity in one, two or three dimensions, offer control of spontaneous emission and photon localization. Low-threshold lasing has been demonstrated in two-dimensional photonic-bandgap materials, both with distributed feedback and defect modes. Liquid crystals with chiral constituents exhibit mesophases with modulated ground states. Helical cholesterics are one-dimensional, whereas blue phases are three-dimensional self-assembled photonic-bandgap structures. Although mirrorless lasing was predicted and observed in one-dimensional helical cholesteric materials and chiral ferroelectric smectic materials, it is of great interest to probe light confinement in three dimensions. Here, we report the first observations of lasing in three-dimensional photonic crystals, in the cholesteric blue phase II. Our results show that distributed feedback is realized in three dimensions, resulting in almost diffraction-limited lasing with significantly lower thresholds than in one dimension. In addition to mirrorless lasing, these self-assembled soft photonic-bandgap materials may also be useful for waveguiding, switching and sensing applications.

Characterization of upper troposphere water vapor measurements during AFWEX using LASE.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferrare, R. A.; Browell, E. V.; Ismail, I.

2002-07-15

Water vapor profiles from NASA's Lidar Atmospheric Sensing Experiment (LASE) system acquired during the ARM/FIRE Water Vapor Experiment (AFWEX) are used to characterize upper troposphere (UT) water vapor measured by ground-based Raman lidars, radiosondes, and in situ aircraft sensors. Initial comparisons showed the average Vaisala radiosonde measurements to be 5-15% drier than the average LASE, Raman lidar, and DC-8 in situ diode laser hygrometer measurements. They show that corrections to the Raman lidar and Vaisala measurements significantly reduce these differences. Precipitable water vapor (PWV) derived from the LASE water vapor profiles agrees within 3% on average with PWV derived frommore » the ARM ground-based microwave radiometer (MWR). The agreement among the LASE, Raman lidar, and MWR measurements demonstrates how the LASE measurements can be used to characterize both profile and column water vapor measurements and that ARM Raman lidar, when calibrated using the MWR PWV, can provide accurate UT water vapor measurements.« less

Renormalization of optical transition strengths in semiconductor nanoparticles due to band mixing

DOE PAGES

Velizhanin, Kirill A.

2016-05-25

We report that unique optical properties of semiconductor nanoparticles (SN) make them very promising in the multitude of applications including lasing, light emission and photovoltaics. In many of these applications it is imperative to understand the physics of interaction of electrons in a SN with external electromagnetic fields on the quantitative level. In particular, the strength of electron–photon coupling determines such important SN parameters as the radiative lifetime and absorption cross section. This strength is often assumed to be fully encoded by the so called Kane momentum matrix element. This parameter, however, pertains to a bulk semiconductor material and, asmore » such, is not sensitive to the quantum confinement effects in SNs. In this work we demonstrate that the quantum confinement, via the so called band mixing, can result in a significant suppression of the strength of electron interaction with electromagnetic field. Within the envelope function formalism we show how this suppression can be described by introducing an effective energy-dependent Kane momentum. Then, the effect of band mixing on the efficiencies of various photoinduced processes can be fully captured by the conventional formulae (e.g., spontaneous emission rate), once the conventional Kane momentum is substituted with the renormalized energy-dependent Kane momentum introduced in here. Lastly, as an example, we evaluate the energy-dependent Kane momentum for spherical PbSe and PbS SNs (i.e., quantum dots) and show that neglecting band mixing in these systems can result in the overestimation of absorption cross sections and emission rates by a factor of ~2.« less

Characterization of wavelength-swept active mode locking fiber laser based on reflective semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Lee, Hwi Don; Lee, Ju Han; Yung Jeong, Myung; Kim, Chang-Seok

2011-07-01

The static and dynamic characteristics of a wavelength-swept active mode locking (AML) fiber laser are presented in both the time-region and wavelength-region. This paper shows experimentally that the linewidth of a laser spectrum and the bandwidth of the sweeping wavelength are dependent directly on the length and dispersion of the fiber cavity as well as the modulation frequency and sweeping rate under the mode-locking condition. To achieve a narrower linewidth, a longer length and higher dispersion of the fiber cavity as well as a higher order mode locking condition are required simultaneously. For a broader bandwidth, a lower order of the mode locking condition is required using a lower modulation frequency. The dynamic sweeping performance is also analyzed experimentally to determine its applicability to optical coherence tomography imaging. It is shown that the maximum sweeping rate can be improved by the increased free spectral range from the shorter length of the fiber cavity. A reflective semiconductor optical amplifier (RSOA) was used to enhance the modulation and dispersion efficiency. Overall a triangular electrical signal can be used instead of the sinusoidal signal to sweep the lasing wavelength at a high sweeping rate due to the lack of mechanical restrictions in the wavelength sweeping mechanism.

Laser power transmission

NASA Technical Reports Server (NTRS)

Conway, Edmund J.

1992-01-01

An overview of previous studies related to laser power transmission is presented. Particular attention is given to the use of solar pumped lasers for space power applications. Three general laser mechanisms are addressed: photodissociation lasing driven by sunlight, photoexcitation lasing driven directly by sunlight, and photoexcitation lasing driven by thermal radiation.

NONLINEAR OPTICAL PHENOMENA: Self-reflection effect in semiconductors in a two-pulse regime

NASA Astrophysics Data System (ADS)

Khadzhi, P. I.; Nad'kin, L. Yu

2004-12-01

Peculiarities of reflection at the end face of a semi-infinite semiconductor in a two-pulse regime are studied. The reflection functions behave in a complex and ambiguous manner governed by the amplitudes of the fields of incident pulses. The possibility of a complete bleaching of the medium for the field in the M-band is predicted.

Weak lasing in one-dimensional polariton superlattices

PubMed Central

Zhang, Long; Xie, Wei; Wang, Jian; Poddubny, Alexander; Lu, Jian; Wang, Yinglei; Gu, Jie; Liu, Wenhui; Xu, Dan; Shen, Xuechu; Rubo, Yuri G.; Altshuler, Boris L.; Kavokin, Alexey V.; Chen, Zhanghai

2015-01-01

Bosons with finite lifetime exhibit condensation and lasing when their influx exceeds the lasing threshold determined by the dissipative losses. In general, different one-particle states decay differently, and the bosons are usually assumed to condense in the state with the longest lifetime. Interaction between the bosons partially neglected by such an assumption can smear the lasing threshold into a threshold domain—a stable lasing many-body state exists within certain intervals of the bosonic influxes. This recently described weak lasing regime is formed by the spontaneously symmetry breaking and phase-locking self-organization of bosonic modes, which results in an essentially many-body state with a stable balance between gains and losses. Here we report, to our knowledge, the first observation of the weak lasing phase in a one-dimensional condensate of exciton–polaritons subject to a periodic potential. Real and reciprocal space photoluminescence images demonstrate that the spatial period of the condensate is twice as large as the period of the underlying periodic potential. These experiments are realized at room temperature in a ZnO microwire deposited on a silicon grating. The period doubling takes place at a critical pumping power, whereas at a lower power polariton emission images have the same periodicity as the grating. PMID:25787253

Cavity magnomechanics

PubMed Central

Zhang, Xufeng; Zou, Chang-Ling; Jiang, Liang; Tang, Hong X.

2016-01-01

A dielectric body couples with electromagnetic fields through radiation pressure and electrostrictive forces, which mediate phonon-photon coupling in cavity optomechanics. In a magnetic medium, according to the Korteweg-Helmholtz formula, which describes the electromagnetic force density acting on a medium, magneostrictive forces should arise and lead to phonon-magnon interaction. We report such a coupled phonon-magnon system based on ferrimagnetic spheres, which we term as cavity magnomechanics, by analogy to cavity optomechanics. Coherent phonon-magnon interactions, including electromagnetically induced transparency and absorption, are demonstrated. Because of the strong hybridization of magnon and microwave photon modes and their high tunability, our platform exhibits new features including parametric amplification of magnons and phonons, triple-resonant photon-magnon-phonon coupling, and phonon lasing. Our work demonstrates the fundamental principle of cavity magnomechanics and its application as a new information transduction platform based on coherent coupling between photons, phonons, and magnons. PMID:27034983

Mode-medium instability and its correction with a Gaussian-reflectivity mirror

NASA Technical Reports Server (NTRS)

Webster, K. L.; Sung, C. C.

1992-01-01

A high-power CO2 laser beam is known to deteriorate after a few microseconds due to a mode-medium instability (MMI) which results from an intensity-dependent heating rate related to the vibrational-to-translational decay of the upper and lower CO2 lasing levels. An iterative numerical technique is developed to model the time evolution of the beam as it is affected by the MMI. The technique is used to study the MMI in an unstable CO2 resonator with a hard-edge output mirror for different parameters like the Fresnel number and the gas density. The results show that the mode of the hard edge unstable resonator deteriorates because of the diffraction ripples in the mode. A Gaussian-reflectivity mirror was used to correct the MMI. This mirror produces a smoother intensity profile which significantly reduces the effects of the MMI. Quantitative results on peak density variation and beam quality are presented.

Mode-medium instability and its correction with a Gaussian reflectivity mirror

NASA Technical Reports Server (NTRS)

Webster, K. L.; Sung, C. C.

1990-01-01

A high power CO2 laser beam is known to deteriorate after a few microseconds due to a mode-medium instability (MMI) which results from an intensity dependent heating rate related to the vibrational-to-translational decay of the upper and lower CO2 lasing levels. An iterative numerical technique is developed to model the time evolution of the beam as it is affected by the MMI. The technique is used to study the MMI in an unstable CO2 resonator with a hard-edge output mirror for different parameters like the Fresnel number and the gas density. The results show that the mode of the hard edge unstable resonator deteriorates because of the diffraction ripples in the mode. A Gaussian-reflectivity mirror was used to correct the MMI. This mirror produces a smoother intensity profile which significantly reduces the effects of the MMI. Quantitative results on peak density variation and beam quality are presented.

Information storage medium and method of recording and retrieving information thereon

DOEpatents

Marchant, D. D.; Begej, Stefan

1986-01-01

Information storage medium comprising a semiconductor doped with first and second impurities or dopants. Preferably, one of the impurities is introduced by ion implantation. Conductive electrodes are photolithographically formed on the surface of the medium. Information is recorded on the medium by selectively applying a focused laser beam to discrete regions of the medium surface so as to anneal discrete regions of the medium containing lattice defects introduced by the ion-implanted impurity. Information is retrieved from the storage medium by applying a focused laser beam to annealed and non-annealed regions so as to produce a photovoltaic signal at each region.

Semiconductor cylinder fiber laser

NASA Astrophysics Data System (ADS)

Sandupatla, Abhinay; Flattery, James; Kornreich, Philipp

2015-12-01

We fabricated a fiber laser that uses a thin semiconductor layer surrounding the glass core as the gain medium. This is a completely new type of laser. The In2Te3 semiconductor layer is about 15-nm thick. The fiber laser has a core diameter of 14.2 μm, an outside diameter of 126 μm, and it is 25-mm long. The laser mirrors consist of a thick vacuum-deposited aluminum layer at one end and a thin semitransparent aluminum layer deposited at the other end of the fiber. The laser is pumped from the side with either light from a halogen tungsten incandescent lamp or a blue light emitting diode flash light. Both the In2Te3 gain medium and the aluminum mirrors have a wide bandwidth. Therefore, the output spectrum consists of a pedestal from a wavelength of about 454 to 623 nm with several peaks. There is a main peak at 545 nm. The main peak has an amplitude of 16.5 dB above the noise level of -73 dB.

Simultaneous multi-state stimulated emission in quantum dot lasers: experiment and analytical approach

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.; Shernyakov, Yu. M.

2012-06-01

The theoretical investigation of the double-state lasing phenomena in InAs/InGaAs quantum dot lasers has been carried out. The new mechanism of the ground-state lasing quenching, which takes place in quantum dot (QD) laser operating in double-state lasing regime at high pump level, was proposed. The difference between electron and hole capture rates causes the depletion of the hole levels and consequently leads to the decrease of an output lasing power via QD ground state with the growth of injection. Moreover, it was shown that the hole-to-electron capture rates ratio strongly affects both the light-current curve and the key laser parameters. The model of the simultaneous lasing through the ground and excited QD states was developed which allows to describe the observed quenching quantitatively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, J.; Hao, H.; Li, J. Y.

We report a systematic experimental study of a storage ring two-color free-electron laser (FEL) operating simultaneously in the infrared (IR) and ultraviolet (UV) wavelength regions. The two-color FEL lasing has been realized using a pair of dual-band high-reflectivity FEL mirrors with two different undulator configurations. We have demonstrated independent wavelength tuning in a wide range for each lasing color, as well as harmonically locked wavelength tuning when the UV lasing occurs at the second harmonic of the IR lasing. Precise power control of two-color lasing with good power stability has also been achieved. In addition, the impact of the degradationmore » of FEL mirrors on the two-color FEL operation is reported. Moreover, we have investigated the temporal structures of the two-color FEL beams, showing simultaneous two-color micropulses with their intensity modulations displayed as FEL macropulses.« less

Asymmetric lasing at spectral singularities

NASA Astrophysics Data System (ADS)

Jin, L.

2018-03-01

Scattering coefficients can diverge at spectral singularities. In such situation, the stationary solution becomes a laser solution with outgoing waves only. We explore a parity-time (PT )-symmetric non-Hermitian two-arm Aharonov-Bohm interferometer consisting of three coupled resonators enclosing synthetic magnetic flux. The synthetic magnetic flux does not break the PT symmetry, which protects the symmetric transmission. The features and conditions of symmetric, asymmetric, and unidirectional lasing at spectral singularities are discussed. We elucidate that lasing affected by the interference is asymmetric; asymmetric lasing is induced by the interplay between the synthetic magnetic flux and the system's non-Hermiticity. The product of the left and right transmissions is equal to that of the reflections. Our findings reveal that the synthetic magnetic flux affects light propagation, and the results can be applied in the design of lasing devices.

Stimulated emission within the exciplex band by plasmonic-nanostructured polymeric heterojunctions.

PubMed

Zhang, Xinping; Li, Hongwei; Wang, Yimeng; Liu, Feifei

2015-03-19

Organic heterojunctions have been extensively employed in the design of light-emitting diodes, photovoltaic devices, and thin-film field-effect transistors, which can be achieved by constructing a bilayer or a multi-layered thin-film deposition, or by blending two or more organic semiconductors with different charge-transport performances. Charge transfer excited states or exciplex may form on the heterointerfaces. Efficient light-emitting diodes have been demonstrated using exciplex emission. However, lasing or stimulated emission processes have not been observed with exciplex formation at organic heterojunctions. In this work, we demonstrate strong coherent interaction between photons and exciplex formation in the blends of poly-9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-l,4-phenylenediamine (PFB) and poly-9,9'-dioctylfluorene-co-benzothiadiazole (F8BT), leading to transient stimulated exciplex emission. The responsible mechanisms involve plasmonic local-field enhancement and plasmonic feedback in a three-dimensional gold-nanoparticle matrix.

An exciton-polariton laser based on biologically produced fluorescent protein

PubMed Central

Dietrich, Christof P.; Steude, Anja; Tropf, Laura; Schubert, Marcel; Kronenberg, Nils M.; Ostermann, Kai; Höfling, Sven; Gather, Malte C.

2016-01-01

Under adequate conditions, cavity polaritons form a macroscopic coherent quantum state, known as polariton condensate. Compared to Wannier-Mott excitons in inorganic semiconductors, the localized Frenkel excitons in organic emitter materials show weaker interaction with each other but stronger coupling to light, which recently enabled the first realization of a polariton condensate at room temperature. However, this required ultrafast optical pumping, which limits the applications of organic polariton condensates. We demonstrate room temperature polariton condensates of cavity polaritons in simple laminated microcavities filled with biologically produced enhanced green fluorescent protein (eGFP). The unique molecular structure of eGFP prevents exciton annihilation even at high excitation densities, thus facilitating polariton condensation under conventional nanosecond pumping. Condensation is clearly evidenced by a distinct threshold, an interaction-induced blueshift of the condensate, long-range coherence, and the presence of a second threshold at higher excitation density that is associated with the onset of photon lasing. PMID:27551686

Classifying the Basic Parameters of Ultraviolet Copper Bromide Laser

NASA Astrophysics Data System (ADS)

Gocheva-Ilieva, S. G.; Iliev, I. P.; Temelkov, K. A.; Vuchkov, N. K.; Sabotinov, N. V.

2009-10-01

The performance of deep ultraviolet copper bromide lasers is of great importance because of their applications in medicine, microbiology, high-precision processing of new materials, high-resolution laser lithography in microelectronics, high-density optical recording of information, laser-induced fluorescence in plasma and wide-gap semiconductors and more. In this paper we present a statistical study on the classification of 12 basic lasing parameters, by using different agglomerative methods of cluster analysis. The results are based on a big amount of experimental data for UV Cu+ Ne-CuBr laser with wavelengths 248.6 nm, 252.9 nm, 260.0 nm and 270.3 nm, obtained in Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences. The relevant influence of parameters on laser generation is also evaluated. The results are applicable in computer modeling and planning the experiments and further laser development with improved output characteristics.

Luminescent and lasing characteristics of heavily doped Yb{sup 3+}:KY(WO{sub 4}){sub 2} crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kisel', V E; Troshin, A E; Shcherbitskii, V G

The luminescence decay times are measured taking into account reabsorption for KY(WO{sub 4}){sub 2}:Yb(KYW:Yb) crystals with atomic concentrations of active ions from 0.2% to 30%. The radiative lifetime of Yb{sup 3+} ions was measured to be 233 {mu}s. The cw output power of 1.46 and 1.62 W was achieved with the slope efficiency 52% and 47% for Yb:KYW lasers with the atomic concentration of Yb{sup 3+} ions equal to 10% and 30%, respectively. Using a semiconductor mirror with a saturable absorber (SESAM) in the passive mode-locking regime, pulses of duration 194 and 180 fs were obtained at wavelengths of 1042more » and 1039 nm for crystals with Yb{sup 3+} concentrations equal to 10% and 30%, respectively, the average output power being 0.63 and 0.75 W. (lasers and amplifiers)« less

Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon.

PubMed

Schuster, Fabian; Kapraun, Jonas; Malheiros-Silveira, Gilliard N; Deshpande, Saniya; Chang-Hasnain, Connie J

2017-04-12

In this Letter, we report the site-controlled growth of InP nanolasers on a silicon substrate with patterned SiO 2 nanomasks by low-temperature metal-organic chemical vapor deposition, compatible with silicon complementary metal-oxide-semiconductor (CMOS) post-processing. A two-step growth procedure is presented to achieve smooth wurtzite faceting of vertical nanopillars. By incorporating InGaAs multiquantum wells, the nanopillar emission can be tuned over a wide spectral range. Enhanced quality factors of the intrinsic InP nanopillar cavities promote lasing at 0.87 and 1.21 μm, located within two important optical telecommunication bands. This is the first demonstration of a site-controlled III-V nanolaser monolithically integrated on silicon with a silicon-transparent emission wavelength, paving the way for energy-efficient on-chip optical links at typical telecommunication wavelengths.

Lasing of surface-polished polycrystalline Ho: YAG (yttrium aluminum garnet) fiber.

PubMed

Kim, Hyunjun; Hay, Randall S; McDaniel, Sean A; Cook, Gary; Usechak, Nicholas G; Urbas, Augustine M; Shugart, Kathleen N; Lee, HeeDong; Kadhim, Ali H; Brown, Dean P; Griffin, Benjamin; Fair, Geoff E; Corns, Randall G; Potticary, Santeri A; Hopkins, Frank K; Averett, Kent L; Zelmon, David E; Parthasarathy, Triplicane A; Keller, Kristin A

2017-03-20

A polycrystalline 1.5% Ho: YAG fiber with a diameter of 31 µm was prepared. Surface roughness from grain boundary grooving was reduced by polishing, which decreased the fiber scattering coefficient from 76 m^-1 to 35 m^-1. Lasing tests were done on this fiber with a SF57 Schott glass cladding. Lasing was confirmed by spectrum narrowing with threshold pump power lower than 500 mW and a slope efficiency of 7%. To our knowledge, this is the first lasing demonstration from a small diameter polycrystalline ceramic fiber.

HiLASE: development of fully diode pumped disk lasers with high average power

NASA Astrophysics Data System (ADS)

Divoky, M.; Smrz, M.; Chyla, M.; Sikocinski, P.; Severova, P.; Novák, O.; Huynh, J.; Nagisetty, S. S.; Miura, T.; Liberatore, C.; Pilař, J.; Slezak, O.; Sawicka, M.; Jambunathan, V.; Gemini, L.; Vanda, J.; Svabek, R.; Endo, A.; Lucianetti, A.; Rostohar, D.; Mason, P. D.; Phillips, P. J.; Ertel, K.; Banerjee, S.; Hernandez-Gomez, C.; Collier, J. L.; Mocek, T.

2015-02-01

An overview of Czech national R&D project HiLASE (High average power pulsed LASEr) is presented. The HiLASE project aims at development of pulsed DPSSL for hi-tech industrial applications. HiLASE will be a user oriented facility with several laser systems with output parameters ranging from a few picosecond pulses with energy of 5 mJ to 0.5 J and repetition rate of 1-100 kHz (based on thin disk technology) to systems with 100 J output energy in nanosecond pulses with repetition rate of 10 Hz (based on multi-slab technology).

Microring embedded hollow polymer fiber laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Linslal, C. L., E-mail: linslal@gmail.com; Sebastian, S.; Mathew, S.

2015-03-30

Strongly modulated laser emission has been observed from rhodamine B doped microring resonator embedded in a hollow polymer optical fiber by transverse optical pumping. The microring resonator is fabricated on the inner wall of a hollow polymer fiber. Highly sharp lasing lines, strong mode selection, and a collimated laser beam are observed from the fiber. Nearly single mode lasing with a side mode suppression ratio of up to 11.8 dB is obtained from the strongly modulated lasing spectrum. The microring embedded hollow polymer fiber laser has shown efficient lasing characteristics even at a propagation length of 1.5 m.

New features of recording equipment based on photothermoplastic medium for earth observation from space

NASA Astrophysics Data System (ADS)

Rotaru, V. K.

2017-11-01

Photothermoplastic medium (PTPM) is a non-silver two-layer, semiconductor-thermoplastic, structure for optical data recording, which is radiative resistant. It allows to record photographic, holographic and other kinds of optical data without any wet chemical development that giving the maximal economic effect for Space and airborn usage.

Electrically assisted bandedge mode selection of photonic crystal lasing in chiral nematic liquid crystals

NASA Astrophysics Data System (ADS)

Wang, Chun-Ta; Chen, Chun-Wei; Yang, Tzu-Hsuan; Nys, Inge; Li, Cheng-Chang; Lin, Tsung-Hsien; Neyts, Kristiaan; Beeckman, Jeroen

2018-01-01

Selection of the bandedge lasing mode of a photonic crystal laser has been realized in a fluorescent dye doped chiral nematic liquid crystal by exerting electrical control over the mode competition. The bandedge lasing can be reversibly switched from the short-wavelength edge mode to the long-wavelength edge mode by applying a voltage of only 20 V, without tuning the bandgap. The underlying mechanism is the field-induced change in the order parameter of the fluorescent dye in the liquid crystal. The orientation of the transition dipole moment determines the polarization state of the dye emission, thereby promoting lasing in the bandedge mode that favors the emission polarization. Moreover, the dynamic mode-selection capability is retained upon polymer-stabilizing the chiral nematic liquid crystal laser. In the polymer-stabilized system, greatly improved stability and lasing performance are observed.

Storage ring two-color free-electron laser

DOE PAGES

Yan, J.; Hao, H.; Li, J. Y.; ...

2016-07-05

We report a systematic experimental study of a storage ring two-color free-electron laser (FEL) operating simultaneously in the infrared (IR) and ultraviolet (UV) wavelength regions. The two-color FEL lasing has been realized using a pair of dual-band high-reflectivity FEL mirrors with two different undulator configurations. We have demonstrated independent wavelength tuning in a wide range for each lasing color, as well as harmonically locked wavelength tuning when the UV lasing occurs at the second harmonic of the IR lasing. Precise power control of two-color lasing with good power stability has also been achieved. In addition, the impact of the degradationmore » of FEL mirrors on the two-color FEL operation is reported. Moreover, we have investigated the temporal structures of the two-color FEL beams, showing simultaneous two-color micropulses with their intensity modulations displayed as FEL macropulses.« less

1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report a room temperature optically pumped Quantum Dot-based Spin-Vertical-External-Cavity Surface-Emitting laser (QD Spin-VECSEL) operating at the telecom wavelength of 1.3 μm. The active medium was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Circularly polarized lasing in the QD-VECSEL under Continuous-Wave optical pumping has been realized with a threshold pump power of 11 mW. We further demonstrate at room temperature control of the QD-VECSEL output polarization ellipticity via the pump polarization.

Iron bromide vapor laser

NASA Astrophysics Data System (ADS)

Sukhanov, V. B.; Shiyanov, D. V.; Trigub, M. V.; Dimaki, V. A.; Evtushenko, G. S.

2016-03-01

We have studied the characteristics of a pulsed gas-discharge laser on iron bromide vapor generating radiation with a wavelength of 452.9 nm at a pulse repetition frequency (PRF) of 5-30 kHz. The maximum output power amounted to 10 mW at a PRF within 5-15 kHz for a voltage of 20-25 kV applied to electrodes of the discharge tube. Addition of HBr to the medium produced leveling of the radial profile of emission. Initial weak lasing at a wavelength of 868.9 nm was observed for the first time, which ceased with buildup of the main 452.9-nm line.

Paintable band-edge liquid crystal lasers.

PubMed

Gardiner, Damian J; Morris, Stephen M; Hands, Philip J W; Mowatt, Carrie; Rutledge, Rupert; Wilkinson, Timothy D; Coles, Harry J

2011-01-31

In this paper we demonstrate photonic band-edge laser emission from emulsion-based polymer dispersed liquid crystals. The lasing medium consists of dye-doped chiral nematic droplets dispersed within a polymer matrix that spontaneously align as the film dries. Such lasers can be easily formed on single substrates with no alignment layers. The system combines the self-organizing periodic structure of chiral nematic liquid crystals with the simplicity of the emulsion procedure so as to produce a material that retains the emission characteristics of band-edge lasers yet can be readily coated. Sequential and stacked layers demonstrate the possibility of achieving simultaneous multi-wavelength laser output from glass, metallic, and flexible substrates.

The laser-diode-excited 5 d-4 f luminescence of Ce3+ and Pr3+ ions embedded into a BaR2F8 matrix

NASA Astrophysics Data System (ADS)

Pushkar', A. A.; Uvarova, T. V.; Kozlova, N. S.; Kuznetsov, S. Yu.; Uvarova, A. G.

2013-06-01

We show the possibility of obtaining UV luminescence from 5 d-4 f transitions of rare-earth ions in the BaY2F8: (Yb3+, Pr3+, Ce3+) crystal under upconversion excitation by standard laser diodes with lasing wavelengths of 960, 808, and 840 nm. Various upconversion mechanisms of pumping for populating the higher-lying energy levels of the active ions, as well as methods of adaptation of the active medium BaY2F8: (Yb3+, Pr3+, Ce3+) to these mechanisms, are considered.

Parametric interactions in presence of different size colloids in semiconductor quantum plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vanshpal, R., E-mail: ravivanshpal@gmail.com; Sharma, Uttam; Dubey, Swati

2015-07-31

Present work is an attempt to investigate the effect of different size colloids on parametric interaction in semiconductor quantum plasma. Inclusion of quantum effect is being done in this analysis through quantum correction term in classical hydrodynamic model of homogeneous semiconductor plasma. The effect is associated with purely quantum origin using quantum Bohm potential and quantum statistics. Colloidal size and quantum correction term modify the parametric dispersion characteristics of ion implanted semiconductor plasma medium. It is found that quantum effect on colloids is inversely proportional to their size. Moreover critical size of implanted colloids for the effective quantum correction ismore » determined which is found to be equal to the lattice spacing of the crystal.« less

The influence of carrier dynamics on double-state lasing in quantum dot lasers at variable temperature

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

2014-12-01

It is shown in analytical form that the carrier capture from the matrix as well as carrier dynamics in quantum dots plays an important role in double-state lasing phenomenon. In particular, the de-synchronization of hole and electron captures allows one to describe recently observed quenching of ground-state lasing, which takes place in quantum dot lasers operating in double-state lasing regime at high injection. From the other side, the detailed analysis of charge carrier dynamics in the single quantum dot enables one to describe the observed light-current characteristics and key temperature dependences.

Analytical approach to the multi-state lasing phenomenon in quantum dot lasers

NASA Astrophysics Data System (ADS)

Korenev, V. V.; Savelyev, A. V.; Zhukov, A. E.; Omelchenko, A. V.; Maximov, M. V.

2013-03-01

We introduce an analytical approach to describe the multi-state lasing phenomenon in quantum dot lasers. We show that the key parameter is the hole-to-electron capture rate ratio. If it is lower than a certain critical value, the complete quenching of ground-state lasing takes place at high injection levels. At higher values of the ratio, the model predicts saturation of the ground-state power. This explains the diversity of experimental results and their contradiction to the conventional rate equation model. Recently found enhancement of ground-state lasing in p-doped samples and temperature dependence of the ground-state power are also discussed.

Multi-state lasing in self-assembled ring-shaped green fluorescent protein microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dietrich, Christof P., E-mail: cpd3@st-andrews.ac.uk; Höfling, Sven; Gather, Malte C., E-mail: mcg6@st-andrews.ac.uk

2014-12-08

We demonstrate highly efficient lasing from multiple photonic states in microcavities filled with self-assembled rings of recombinant enhanced green fluorescent protein (eGFP) in its solid state form. The lasing regime is achieved at very low excitation energies of 13 nJ and occurs from cavity modes dispersed in both energy and momentum. We attribute the momentum distribution to very efficient scattering of incident light at the surface of the eGFP rings. The distribution of lasing states in energy is induced by the large spectral width of the gain spectrum of recombinant eGFP (FWHM ≅ 25 nm)

Lasing by driven atoms-cavity system in collective strong coupling regime.

PubMed

Sawant, Rahul; Rangwala, S A

2017-09-12

The interaction of laser cooled atoms with resonant light is determined by the natural linewidth of the excited state. An optical cavity is another optically resonant system where the loss from the cavity determines the resonant optical response of the system. The near resonant combination of an optical Fabry-Pérot cavity with laser cooled and trapped atoms couples two distinct optical resonators via light and has great potential for precision measurements and the creation of versatile quantum optics systems. Here we show how driven magneto-optically trapped atoms in collective strong coupling regime with the cavity leads to lasing at a frequency red detuned from the atomic transition. Lasing is demonstrated experimentally by the observation of a lasing threshold accompanied by polarization and spatial mode purity, and line-narrowing in the outcoupled light. Spontaneous emission into the cavity mode by the driven atoms stimulates lasing action, which is capable of operating as a continuous wave laser in steady state, without a seed laser. The system is modeled theoretically, and qualitative agreement with experimentally observed lasing is seen. Our result opens up a range of new measurement possibilities with this system.

Symmetry, stability, and computation of degenerate lasing modes

NASA Astrophysics Data System (ADS)

Liu, David; Zhen, Bo; Ge, Li; Hernandez, Felipe; Pick, Adi; Burkhardt, Stephan; Liertzer, Matthias; Rotter, Stefan; Johnson, Steven G.

2017-02-01

We present a general method to obtain the stable lasing solutions for the steady-state ab initio lasing theory (SALT) for the case of a degenerate symmetric laser in two dimensions (2D). We find that under most regimes (with one pathological exception), the stable solutions are clockwise and counterclockwise circulating modes, generalizing previously known results of ring lasers to all 2D rotational symmetry groups. Our method uses a combination of semianalytical solutions close to lasing threshold and numerical solvers to track the lasing modes far above threshold. Near threshold, we find closed-form expressions for both circulating modes and other types of lasing solutions as well as for their linearized Maxwell-Bloch eigenvalues, providing a simple way to determine their stability without having to do a full nonlinear numerical calculation. Above threshold, we show that a key feature of the circulating mode is its "chiral" intensity pattern, which arises from spontaneous symmetry breaking of mirror symmetry, and whose symmetry group requires that the degeneracy persists even when nonlinear effects become important. Finally, we introduce a numerical technique to solve the degenerate SALT equations far above threshold even when spatial discretization artificially breaks the degeneracy.

Harmonic lasing in x-ray free electron lasers

NASA Astrophysics Data System (ADS)

Schneidmiller, E. A.; Yurkov, M. V.

2012-08-01

Harmonic lasing in a free electron laser with a planar undulator (under the condition that the fundamental frequency is suppressed) might be a cheap and efficient way of extension of wavelength ranges of existing and planned x-ray free electron laser (FEL) facilities. Contrary to nonlinear harmonic generation, harmonic lasing can provide much more intense, stable, and narrow-band FEL beam which is easier to handle due to the suppressed fundamental frequency. In this paper we perform a parametrization of the solution of the eigenvalue equation for lasing at odd harmonics, and present an explicit expression for FEL gain length, taking into account all essential effects. We propose and discuss methods for suppression of the fundamental harmonic. We also suggest a combined use of harmonic lasing and lasing at the retuned fundamental wavelength in order to reduce bandwidth and to increase brilliance of x-ray beam at saturation. Considering 3rd harmonic lasing as a practical example, we come to the conclusion that it is much more robust than usually thought, and can be widely used in the existing or planned x-ray FEL (XFEL) facilities. In particular, Linac Coherent Light Source (LCLS) after a minor modification can lase to saturation at the 3rd harmonic up to the photon energy of 25-30 keV providing multigigawatt power level and narrow bandwidth. As for the European XFEL, harmonic lasing would allow one to extend operating range (ultimately up to 100 keV), to reduce FEL bandwidth and to increase brilliance, to enable two-color operation for pump-probe experiments, and to provide more flexible operation at different electron energies. Similar improvements can be realized in other x-ray FEL facilities with gap-tunable undulators like FLASH II, SACLA, LCLS II, etc. Harmonic lasing can be an attractive option for compact x-ray FELs (driven by electron beams with a relatively low energy), allowing the use of the standard undulator technology instead of small-gap in-vacuum devices. Finally, in this paper we discover that in a part of the parameter space, corresponding to the operating range of soft x-ray beam lines of x-ray FEL facilities (like SASE3 beam line of the European XFEL), harmonics can grow faster than the fundamental wavelength. This feature can be used in some experiments, but might also be an unwanted phenomenon, and we discuss possible measures to diminish it.

Characterization of Upper-Troposphere Water Vapor Measurements during AFWEX Using LASE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferrare, Richard; Browell, E. V.; Ismail, S.

Water vapor profiles from NASA's Lidar Atmospheric Sensing Experiment (LASE) system acquired during the ARM/FIRE Water Vapor Experiment (AFWEX) are used to characterize upper troposphere water vapor (UTWV) measured by ground-based Raman lidars, radiosondes, and in situ aircraft sensors over the Department of Energy Atmospheric Radiation Measurement (ARM) Southern Great Plains (SGP) site in northern Oklahoma. LASE was deployed from the NASA DC-8 aircraft and measured water vapor over the ARM SGP Central Facility (CF) site during seven flights between November 27 and December 10, 2000. Initially, the DOE ARM SGP Cloud and Radiation Testbed (CART) Raman lidar (CARL) UTWVmore » profiles were about 5-7% wetter than LASE in the upper troposphere, and the Vaisala RS80-H radiosonde profiles were about 10% drier than LASE between 8-12 km. Scaling the Vaisala water vapor profiles to match the precipitable water vapor (PWV) measured by the ARM SGP microwave radiometer (MWR) did not change these results significantly. By accounting for an overlap correction of the CARL water vapor profiles and by employing schemes designed to correct the Vaisala RS80-H calibration method and account for the time response of the Vaisala RS80H water vapor sensor, the average differences between the CARL and Vaisala radiosonde upper troposphere water vapor profiles are reduced to about 5%, which is within the ARM goal of mean differences of less than 10%. The LASE and DC-8 in situ Diode Laser Hygrometer (DLH) UTWV measurements generally agreed to within about 3 to 4%. The DC-8 in situ frost point cryogenic hygrometer and Snow White chilled mirror measurements were drier than the LASE, Raman lidars, and corrected Vaisala RS80H measurements by about 10-25% and 10-15%, respectively. Sippican (formerly VIZ manufacturing) carbon hygristor radiosondes exhibited large variabilities and poor agreement with the other measurements. PWV derived from the LASE profiles agreed to within about 3% on average with PWV derived from the ARM SGP microwave radiometer. The agreement between the LASE and MWR PWV and the LASE and CARL UTWV measurements supports the hypotheses that MWR measurements of the 22 GHz water vapor line can accurately constrain the total water vapor amount and that the CART Raman lidar, when calibrated using the MWR PWV, can provide an accurate, stable reference for characterizing upper troposphere water vapor.« less

Narrowband random lasing in a Bismuth-doped active fiber

PubMed Central

Lobach, Ivan A.; Kablukov, Sergey I.; Skvortsov, Mikhail I.; Podivilov, Evgeniy V.; Melkumov, Mikhail A.; Babin, Sergey A.; Dianov, Evgeny M.

2016-01-01

Random fiber lasers operating via the Rayleigh scattering (RS) feedback attract now a great deal of attention as they generate a high-quality unidirectional laser beam with the efficiency and performance comparable and even exceeding those of fiber lasers with conventional cavities. Similar to other random lasers, both amplification and random scattering are distributed here along the laser medium being usually represented by a kilometers-long passive fiber with Raman gain. However, it is hardly possible to utilize normal gain in conventional active fibers as they are usually short and RS is negligible. Here we report on the first demonstration of the RS-based random lasing in an active fiber. This became possible due to the implementation of a new Bi-doped fiber with an increased amplification length and RS coefficient. The realized Bi-fiber random laser generates in a specific spectral region (1.42 μm) exhibiting unique features, in particular, a much narrower linewidth than that in conventional cavity of the same length, in agreement with the developed theory. Lasers of this type have a great potential for applications as Bi-doped fibers with different host compositions enable laser operation in an extremely broad range of wavelengths, 1.15–1.78 μm. PMID:27435232

On the lasing-like transmission via radiation-mode-enabled TE resonant optical tunneling in asymmetric, passive, layered media with metal.

PubMed

Chang, Yin-Jung

2014-11-17

Transverse-electric (TE) resonant optical tunneling through an asymmetric, single-barrier potential system consisting of all passive materials in two-dimensional (2-D) glass/silver/TiO₂/air configuration is quantified at a silver thickness of 35 nm. Resonant tunneling occurs when the incident condition corresponds to the excitation of a radiation mode. Lasing-like transmission occurring at resonance is carefully qualified in terms of power conservation, resonance condition, and identification of the gain medium equivalent. In particular, effective gain (geff) and threshold gain (gth) coefficients, both of which are strong functions of the forward reflection coefficient at the silver-TiO₂ interface, are analytically obtained and the angular span over which geff > gth is further verified rigorously electromagnetically. The results show that the present configuration may be treated as a cascade of the gain equivalent (i.e. the silver film) and the TiO₂resonator that is of Fabry-Perot type, giving rise to negative gth when resonant tunneling occurs. The transmittance spectrum exhibiting a gain-curve-like envelope is shown to be a direct consequence of the competition of the resonator loss at the silver-TiO₂interface and the forward tunneling probability through the silver barrier, all controlled by the effective silver barrier thickness.

LASE measurements of water vapor and aerosol profiles during the Plains Elevated Convection at Night (PECAN) field experiment

NASA Astrophysics Data System (ADS)

Nehrir, A. R.; Ferrare, R. A.; Kooi, S. A.; Butler, C. F.; Notari, A.; Hair, J. W.; Collins, J. E., Jr.; Ismail, S.

2015-12-01

The Lidar Atmospheric Sensing Experiment (LASE) system was deployed on the NASA DC-8 aircraft during the Plains Elevated Convection At Night (PECAN) field experiment, which was conducted during June-July 2015 over the central and southern plains. LASE is an active remote sensor that employs the differential absorption lidar (DIAL) technique to measure range resolved profiles of water vapor and aerosols above and below the aircraft. The DC-8 conducted nine local science flights from June 30- July 14 where LASE sampled water vapor and aerosol fields in support of the PECAN primary science objectives relating to better understanding nocturnal Mesoscale Convective Systems (MCSs), Convective Initiation (CI), the Low Level Jet (LLJ), bores, and to compare different airborne and ground based measurements. LASE observed large spatial and temporal variability in water vapor and aerosol distributions in advance of nocturnal MCSs, across bores resulting from MCS outflow boundaries, and across the LLJ associated with the development of MCSs and CI. An overview of the LASE data collected during the PECAN field experiment will be presented where emphasis will be placed on variability of water vapor profiles in the vicinity of severe storms and intense convection in the central and southern plains. Preliminary comparisons show good agreement between coincident LASE and radiosonde water vapor profiles. In addition, an advanced water vapor DIAL system being developed at NASA Langley will be discussed.

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

DOEpatents

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji Won; Rondinone, Adam J.; Love, Lonnie J.; Duty, Chad Edward; Madden, Andrew Stephen; Li, Yiliang; Ivanov, Ilia N.; Rawn, Claudia Jeanette

2014-06-24

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

On the Formation Mechanism of Interference Rings in the Ablation Area on the Condensed Medium Surface under Irradiation with Femtosecond Laser Pulses

NASA Astrophysics Data System (ADS)

Bykovskii, N. E.; Senatskii, Yu. V.

2018-02-01

The dynamics of Newton interference rings appearing in the ablation area on the surface of various condensed media under irradiation with femtosecond laser pulses is analyzed (according to published data on fs ablation). The data on the refractive index evolution in the expanding material cloud from the metal, semiconductor, and dielectric surface, obtained by interference pattern processing. The mechanism of the concentration of the energy absorbed by a medium from the laser beam in the thin layer under the irradiated sample surface is considered. The appearance of the inner layer with increased energy release explains why the ablation process from the metal, semiconductor, and dielectric surface, despite the differences in their compositions and radiation absorption mechanisms, occurs similarly, i.e., with the formation of a thin shell at the outer ablation cloud boundary, which consists of a condensed medium reflecting radiation and, together with the target surface, forms a structure necessary for interference formation.

Temperature and current coefficients of lasing wavelength in tunable diode laser spectroscopy.

PubMed

Fukuda, M; Mishima, T; Nakayama, N; Masuda, T

2010-08-01

The factors determining temperature and current coefficients of lasing wavelength are investigated and discussed under monitoring CO(2)-gas absorption spectra. The diffusion rate of Joule heating at the active layer to the surrounding region is observed by monitoring the change in the junction voltage, which is a function of temperature and the wavelength (frequency) deviation under sinusoidal current modulation. Based on the experimental results, the time interval of monitoring the wavelength after changing the ambient temperature or injected current (scanning rate) has to be constant at least to eliminate the monitoring error induced by the deviation of lasing wavelength, though the temperature and current coefficients of lasing wavelength differ with the rate.

Rational harmonic mode-locking pulse quality of the dark-optical-comb injected semiconductor optical amplifier fiber ring laser.

PubMed

Lin, Gong-Ru; Lee, Chao-Kuei; Kang, Jung-Jui

2008-06-09

We study the rational harmonic mode-locking (RHML) order dependent pulse shortening force and dynamic chirp characteristics of a gain-saturated semiconductor optical amplifier fiber laser (SOAFL) under dark-optical-comb injection, and discuss the competition between mode-locking mechanisms in the SOAFL at high-gain and strong optical injection condition at higher RHML orders. The evolutions of spectra, mode-locking and continuous lasing powers by measuring the ratio of DC/pulse amplitude and the pulse shortening force (I(pulse)/P(avg)(2) ) are performed to determine the RHML capability of SOAFL. As the rational harmonic order increases up to 20, the spectral linewidth shrinks from 12 to 3 nm, the ratio of DC/pulse amplitude enlarges from 0.025 to 2.4, and the pulse-shortening force reduces from 0.9 to 0.05. At fundamental and highest RHML condition, we characterize the frequency detuning range to realize the mode-locking quality, and measure the dynamic frequency chirp of the RHML-SOAFL to distinguish the linear and nonlinear chirp after dispersion compensation. With increasing RHML order, the pulsewidth is broadened from 4.2 to 26.4 ps with corresponding chirp reducing from 0.7 to 0.2 GHz and linear/nonlinear chirp ratio changes from 4.3 to 1.3, which interprets the high-order chirp becomes dominates at higher RHML orders.

Femtosecond wavelength tunable semiconductor optical amplifier fiber laser mode-locked by backward dark-optical-comb injection at 10 GHz.

PubMed

Lin, Gong-Ru; Chiu, I-Hsiang

2005-10-31

Femtosecond nonlinear pulse compression of a wavelength-tunable, backward dark-optical-comb injection harmonic-mode-locked semiconductor optical amplifier based fiber laser (SOAFL) is demonstrated for the first time. Shortest mode-locked SOAFL pulsewidth of 15 ps at 1 GHz is generated, which can further be compressed to 180 fs after linear chirp compensation, nonlinear soliton compression, and birefringent filtering. A maximum pulsewidth compression ratio for the compressed eighth-order SOAFL soliton of up to 80 is reported. The pedestal-free eighth-order soliton can be obtained by injecting the amplified pulse with peak power of 51 W into a 107.5m-long single-mode fiber (SMF), providing a linewidth and time-bandwidth product of 13.8 nm and 0.31, respectively. The tolerance in SMF length is relatively large (100-300 m) for obtaining <200fs SOAFL pulsewidth at wavelength tuning range of 1530-1560 nm. By extending the repetition frequency of dark-optical-comb up to 10 GHz, the mode-locked SOAFL pulsewidth can be slightly shortened from 5.4 ps to 3.9 ps after dispersion compensating, and further to 560 fs after second-order soliton compression. The lasing linewidth, time-bandwidth product and pulsewidth suppressing ratio of the SOAFL soliton become 4.5 nm, 0.33, and 10, respectively.

Statistical parity-time-symmetric lasing in an optical fibre network.

PubMed

Jahromi, Ali K; Hassan, Absar U; Christodoulides, Demetrios N; Abouraddy, Ayman F

2017-11-07

Parity-time (PT)-symmetry in optics is a condition whereby the real and imaginary parts of the refractive index across a photonic structure are deliberately balanced. This balance can lead to interesting optical phenomena, such as unidirectional invisibility, loss-induced lasing, single-mode lasing from multimode resonators, and non-reciprocal effects in conjunction with nonlinearities. Because PT-symmetry has been thought of as fragile, experimental realisations to date have been usually restricted to on-chip micro-devices. Here, we demonstrate that certain features of PT-symmetry are sufficiently robust to survive the statistical fluctuations associated with a macroscopic optical cavity. We examine the lasing dynamics in optical fibre-based coupled cavities more than a kilometre in length with balanced gain and loss. Although fluctuations can detune the cavity by more than the free spectral range, the behaviour of the lasing threshold and the laser power is that expected from a PT-stable system. Furthermore, we observe a statistical symmetry breaking upon varying the cavity loss.

Effects of XeCl excimer lasers and fluoride application on artificial caries-like lesions

NASA Astrophysics Data System (ADS)

Wilder-Smith, Petra B. B.; Phan, T.; Liaw, Lih-Huei L.; Berns, Michael W.

1994-09-01

In this study the affects of a pulsed excimer laser emitting at 308 nm (XeCl) on enamel susceptibility to artificial caries-like lesions were investigated. Additional effects of fluoride (F) application were also studied and SEC examinations performed. Sixty-four extracted human molar teeth were coated with acid resistant varnish leaving four windows, then sectioned, leaving one window on each tooth quarter. The windows were treated in one of the following ways: untreated (control), or lased, or exposed to 4 min. APF (1.23% F) before lasing, or exposed to 4 min. APF (1.23% F) after lasing. After lasing, microhardness profiles were obtained and SEM was performed. Caries resistance was generally increased at moderate fluences. F application combined with lasing enhanced caries resistance at some parameters. SEM showed effects ranging from minimal to localized effects to extended glazing. Pulsed excimer laser irradiation, especially combined with topical F application can inhibit development of artificial caries-like lesions.

Lasing in optimized two-dimensional iron-nail-shaped rod photonic crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Soon-Yong; Moon, Seul-Ki; Yang, Jin-Kyu, E-mail: jinkyuyang@kongju.ac.kr

2016-03-15

We demonstrated lasing at the Γ-point band-edge (BE) modes in optimized two-dimensional iron-nail-shaped rod photonic crystals by optical pulse pumping at room temperature. As the radius of the rod increased quadratically toward the edge of the pattern, the quality factor of the Γ-point BE mode increased up to three times, and the modal volume decreased to 56% compared with the values of the original Γ-point BE mode because of the reduction of the optical loss in the horizontal direction. Single-mode lasing from an optimized iron-nail-shaped rod array with an InGaAsP multiple quantum well embedded in the nail heads was observedmore » at a low threshold pump power of 160 μW. Real-image-based numerical simulations showed that the lasing actions originated from the optimized Γ-point BE mode and agreed well with the measurement results, including the lasing polarization, wavelength, and near-field image.« less

Proposal for ultrasmall deep ultraviolet diamond Raman nanolaser

NASA Astrophysics Data System (ADS)

Kim, Kwang-Hyon; Choe, Song-Hyok

2016-10-01

We propose diamond nanoparticle Raman laser operating in the spectral range of deep ultraviolet. High Raman gain and low cavity loss of diamond nanoparticles enable low-threshold Raman lasing. Based on the coupled-mode theory, we numerically study its lasing dynamics. For the diamond nanoparticle with a radius of about 130 nm, the lasing threshold energy is below 10 pJ for a pump spot size of 1 μm.

Degenerate band edge laser

NASA Astrophysics Data System (ADS)

Veysi, Mehdi; Othman, Mohamed A. K.; Figotin, Alexander; Capolino, Filippo

2018-05-01

We propose a class of lasers based on a fourth-order exceptional point of degeneracy (EPD) referred to as the degenerate band edge (DBE). EPDs have been found in parity-time-symmetric photonic structures that require loss and/or gain; here we show that the DBE is a different kind of EPD since it occurs in periodic structures that are lossless and gainless. Because of this property, a small level of gain is sufficient to induce single-frequency lasing based on a synchronous operation of four degenerate Floquet-Bloch eigenwaves. This lasing scheme constitutes a light-matter interaction mechanism that leads also to a unique scaling law of the laser threshold with the inverse of the fifth power of the laser-cavity length. The DBE laser has the lowest lasing threshold in comparison to a regular band edge laser and to a conventional laser in cavities with the same loaded quality (Q ) factor and length. In particular, even without mirror reflectors the DBE laser exhibits a lasing threshold which is an order of magnitude lower than that of a uniform cavity laser of the same length and with very high mirror reflectivity. Importantly, this novel DBE lasing regime enforces mode selectivity and coherent single-frequency operation even for pumping rates well beyond the lasing threshold, in contrast to the multifrequency nature of conventional uniform cavity lasers.

Multiplexed lasing in tissues

NASA Astrophysics Data System (ADS)

Chen, Yu-Cheng; Chen, Qiushu; Fan, Xudong

2017-02-01

Biolasers are an emerging technology for next generation biochemical detection and clinical applications. Progress has recently been made to achieve lasing from biomolecules and single living cells. Tissues, which consist of cells embedded in extracellular matrix, mimic more closely the actual complex biological environment in a living body and therefore are of more practical significance. Here, we developed a highly versatile tissue laser platform, in which tissues stained with fluorophores are sandwiched in a high-Q Fabry-Pérot microcavity. Distinct lasing emissions from muscle and adipose tissues stained respectively with fluorescein isothiocyanate (FITC) and boron-dipyrromethene (BODIPY), and hybrid muscle/adipose tissue with dual-staining were achieved with a threshold of only 10 μJ/mm2. Additionally, we investigated how tissue structure/geometry, tissue thickness, and staining dye concentration affect the tissue laser. It is further found that, despite large fluorescence spectral overlap between FITC and BODIPY in tissues, their lasing emissions could be clearly distinguished and controlled due to their narrow lasing bands and different lasing thresholds, thus enabling highly multiplexed detection. Our tissue laser platform can be broadly applicable to various types of tissues/diseases. It provides a new tool for a wide range of biological and biomedical applications, such as diagnostics/screening of tissues and identification/monitoring of biological transformations in tissue engineering.

Very Low Threshold ASE and Lasing Using Auger-Suppressed Nanocrystal Quantum Dots

NASA Astrophysics Data System (ADS)

Park, Young-Shin; Bae, Wan Ki; Fidler, Andrew; Baker, Tomas; Lim, Jaehoon; Pietryga, Jeffrey; Klimov, Victor

2015-03-01

We report amplified spontaneous emission (ASE) and lasing with very low thresholds obtained using thin films made of engineered thick-shell CdSe/CdS QDs that have a CdSeS alloyed layer between the CdSe core and the CdS shell. These ``alloyed'' QDs exhibit considerable reduction of Auger decay rates, which results in high biexciton emission quantum yields (QBX of ~ 12%) and extended biexciton lifetimes (τBX of ~ 4ns). By using a fs laser (400 nm at 1 kHz repetition rate) as a pump source, we measured the threshold intensity of biexciton ASE as low as 5 μJ/cm2, which is about 5 times lower than the lowest ASE thresholds reported for thick-shell QDs without interfacial alloying. Interestingly, we also observed biexciton random lasing from the same QD film. Lasing spectrum comprises several sharp peaks (linewidth ~0.2 nm), and the heights and the spectral positions of these peaks show strong dependence on the exact position of the excitation spot on the QD film. Our study suggests that further suppression of nonradiative Auger decay rates via even finer grading of the core/shell interface could lead to a further reduction in the lasing threshold and potentially realization of lasing under continuous-wave excitation.

NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

NASA Astrophysics Data System (ADS)

Khadzhi, P. I.; Lyakhomskaya, K. D.

1999-10-01

The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

LASE validation experiment: preliminary processing of relative humidity from LASE derived water vapor in the middle to upper troposphere

NASA Technical Reports Server (NTRS)

Brackett, Vincent G.; Ismail, Syed; Browell, Edward V.; Kooi, Susan A.; Clayton, Marian B.; Ferrare, Richard A.; Minnis, Patrick; Getzewich, Brian J.; Staszel, Jennifer

1998-01-01

Lidar Atmospheric Sensing Experiment (LASE) is the first fully engineered, autonomous airborne DIAL (Differentials Absorption Lidar) system to measure water vapor, aerosols, and clouds throughout the troposphere. This system uses a double-pulsed Ti:sapphire laser, which is pumped by a frequency-doubled flashlamp-pumped Nd: YAG laser, to transmit light in the 815 mn absorption band of water vapor. LASE operates by locking to a strong water vapor line and electronically tuning to any spectral position on the absorption line to choose the suitable absorption cross-section for optimum measurements over a range of concentrations in the atmosphere. During the LASE Validation Experiment, which was conducted over Wallops Island during September, 1995, LASE operated on either the strong water line for measurements in middle to upper troposphere, or on the weak water line for measurements made in the middle to lower troposphere including the boundary layer. Comparisons with water vapor measurements made by airborne dew point and frost point hygrometers, NASA/GSFC (Goddard Space Flight Center) Raman Lidar, and radiosondes showed the LASE water vapor mixing ratio measurements to have an accuracy of better than 6% or 0.01 g/kg, whichever is larger, throughout the troposphere. In addition to measuring water vapor mixing ratio profiles, LASE simultaneously measures aerosol backscattering profiles at the off-line wavelength near 815 nm from which atmospheric scattering ratio (ASR) profiles are calculated. ASR is defined as the ratio of total (aerosol + molecular) atmospheric scattering to molecular scattering. Assuming a region with very low aerosol loading can be identified, such as that typically found just below the tropopause, then the ASR can be determined. The ASR profiles are calculated by normalizing the scattering in the region containing enhanced aerosols to the expected scattering by the "clean" atmosphere at that altitude. Images of the total ASR clearly depict cloud regions, including multiple cloud layers, thin upper level cirrus, etc., throughout the troposphere. New data products that are being derived from the LASE aerosol and water measurements include: 1) aerosol extinction coefficient, 2) aerosol optical thickness, 3) precipitable water vapor, and 4) relative humidity (RH). These products can be compared with airborne in-situ, and ground and satellite remote sensing measurements,. This paper presents a preliminary examination of RH profiles in the middle to upper troposphere that are generated from LASE measured water vapor mixing ratio profiles coupled with rawinsonde profiles of temperature and pressure.

Shear bond strength of resin composite bonded with two adhesives: Influence of Er: YAG laser irradiation distance

PubMed Central

Shirani, Farzaneh; Birang, Reza; Malekipour, Mohammad Reza; Hourmehr, Zahra; Kazemi, Shantia

2014-01-01

Background: Dental surfaces prepared with different Er:YAG laser distance may have different characteristics compared with those prepared with conventional instruments. The aim of this study was to investigate the effect of Er:YAG laser irradiation distance from enamel and dentin surfaces on the shear bond strength of composite with self-etch and etch and rinse bonding systems compared with conventional preparation method. Materials and Methods: Two hundred caries-free human third molars were randomly divided into twenty groups (n = 10). Ten groups were designated for enamel surface (E1-E10) and ten for dentin surface (D1-D10). Er: YAG laser (2940 nm) was used on the E1-E8 (240 mJ, 25 Hz) and D1-D8 (140 mJ, 30 Hz) groups at four different distances of 0.5 (standard), 2, 4 and 11 mm. Control groups (E9, E10, D9 and D10) were ground with medium grit diamond bur. The enamel and dentin specimens were divided into two subgroups that were bonded with either Single Bond or Clearfil SE Bond. Resin composite (Z100) was dispensed on prepared dentin and enamel. The shear bond strengths were tested using a universal testing machine. Data were analyzed by SPSS12 statistical software using three way analysis of variance, Tukey and independent t-test. P < 0.05 was considered as significant. Results: There was a significant difference between enamel and dentin substrates (P < 0.001) and between lased and un-lased groups; the un-lased group had significantly higher bond strength (P < 0.001). Shear bond strength increased significantly with an increase in the laser irradiation distance (P < 0.05) on enamel surfaces (in both bonding agent subgroups) and on dentin surfaces (in the Single Bond subgroup). Conclusion: Laser irradiation decreases shear bond strength. Irradiation distance affects shear bond strength and increasing the distance would decrease the negative effects of laser irradiation. PMID:25540665

Enhanced linearly polarized lasing emission from nanoimprinted surface-emitting distributed feedback laser based on polymeric liquid crystals

NASA Astrophysics Data System (ADS)

Jeong, Soon Moon; Ha, Na Young; Chee, Mu Guen; Araoka, Fumito; Ishikawa, Ken; Takezoe, Hideo; Nishimura, Suzushi; Suzaki, Goro

2008-12-01

The authors have demonstrated the enhancement of linearly polarized lasing emission intensity using a structure made by a simple fabrication process. The enhanced lasing is achieved using a nanoimprinted distributed feedback structure together with spin-coated polymeric liquid crystals. The backward linearly TE-polarized lasing emission is transformed to left-handed circularly polarized light (L-CPL) by employing a dye-doped polymeric nematic liquid crystal (PNLC) film as a (-1/4)λ[=(3/4)λ] plate. The L-CPL is effectively reflected by a L-polymeric cholesteric liquid crystal film as a reflector and transformed back to TE-polarized light by the PNLC film; as a result one-directional emission intensity is enhanced.

Ultralow-threshold Raman lasing with CaF2 resonators.

PubMed

Grudinin, Ivan S; Maleki, Lute

2007-01-15

We demonstrate efficient Raman lasing with CaF2 whispering-gallery-mode resonators. Continuous-wave emission threshold is shown to be possible below 1 microW with a 5mm cavity, which is to our knowledge orders of magnitude lower than in any other Raman source. Low-threshold lasing is made possible by the ultrahigh optical quality factor of the cavity, of the order of Q=5x10(10). Stokes components of up to the fifth order were observed at a pump power of 160 microW, and up to the eighth order at 1 mW. A lasing threshold of 15 microW was also observed in a 100 microm CaF2 microcavity. Potential applications are discussed.

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Subwavelength micropillar array terahertz lasers.

PubMed

Krall, Michael; Brandstetter, Martin; Deutsch, Christoph; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried; Unterrainer, Karl

2014-01-13

We report on micropillar-based terahertz lasers with active pillars that are much smaller than the emission wavelength. These micropillar array lasers correspond to scaled-down band-edge photonic crystal lasers forming an active photonic metamaterial. In contrast to photonic crystal lasers which use significantly larger pillar structures, lasing emission is not observed close to high-symmetry points in the photonic band diagram, but in the effective medium regime. We measure stimulated emission at 4 THz for micropillar array lasers with pillar diameters of 5 µm. Our results not only demonstrate the integration of active subwavelength optics in a terahertz laser, but are also an important step towards the realization of nanowire-based terahertz lasers.

High Average Power Laser Gain Medium With Low Optical Distortion Using A Transverse Flowing Liquid Host

DOEpatents

Comaskey, Brian J.; Ault, Earl R.; Kuklo, Thomas C.

2005-07-05

A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.

The evolution of lasers in urology

PubMed Central

Zarrabi, Amir; Gross, Andreas J.

2011-01-01

The world’s first laser was developed by Theodore Maiman in 1960. Over the course of the past five decades, this technology has evolved into a highly specialized entity, also finding a niche market in the field of urology. Lasers obtained from various lasing mediums producing amplified light of different wavelengths have been tested for urological applications. Today, these lasers are most commonly used in the surgical management of benign prostatic hyperplasia and as intracorporeal lithotripters. Other uses include ablation of various urologic tumors and incising strictures of the upper- and lower urinary tract. A continuous process of evolution of this technology is taking place, resulting in surgical lasers becoming ever safer, more effective, and more affordable. PMID:21869908

Mode-locked solid state lasers using diode laser excitation

DOEpatents

Holtom, Gary R [Boston, MA

2012-03-06

A mode-locked laser employs a coupled-polarization scheme for efficient longitudinal pumping by reshaped laser diode bars. One or more dielectric polarizers are configured to reflect a pumping wavelength having a first polarization and to reflect a lasing wavelength having a second polarization. An asymmetric cavity provides relatively large beam spot sizes in gain medium to permit efficient coupling to a volume pumped by a laser diode bar. The cavity can include a collimation region with a controlled beam spot size for insertion of a saturable absorber and dispersion components. Beam spot size is selected to provide stable mode locking based on Kerr lensing. Pulse durations of less than 100 fs can be achieved in Yb:KGW.

Mather-type dense plasma focus as a new optical pump for short-wavelength high-power lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fanning, J.J.; Kim, K.

For the first time, a Mather-type dense plasma focus (MDPF) is successfully operated as an optical pump for lasers. Rhodamine-6G dye is optically pumped using the MDPF fluorescence, producing a laser pulse 1 ..mu..s in duration and more than 50 kW in output power. No optimization is attempted either of the laser cavity or of the lasing medium concentration and volume. A brief description of the experimental setup is presented, along with a summary and discussion of the results. The advantages of the present optical pump source and, in particular, their implications for the pumping of short-wavelength lasers are discussed.

Optically pumped isotopic ammonia laser system

DOEpatents

Buchwald, Melvin I.; Jones, Claude R.; Nelson, Leonard Y.

1982-01-01

An optically pumped isotopic ammonia laser system which is capable of producing a plurality of frequencies in the middle infrared spectral region. Two optical pumping mechanisms are disclosed, i.e., pumping on R(J) and lasing on P(J) in response to enhancement of rotational cascade lasing including stimulated Raman effects, and, pumping on R(J) and lasing on P(J+2). The disclosed apparatus for optical pumping include a hole coupled cavity and a grating coupled cavity.

Numerical simulation of hydrogen fluorine overtone chemical lasers

NASA Astrophysics Data System (ADS)

Chen, Jinbao; Jiang, Zhongfu; Hua, Weihong; Liu, Zejin; Shu, Baihong

1998-08-01

A two-dimensional program was applied to simulate the chemical dynamic process, gas dynamic process and lasing process of a combustion-driven CW HF overtone chemical lasers. Some important parameters in the cavity were obtained. The calculated results included HF molecule concentration on each vibration energy level while lasing, averaged pressure and temperature, zero power gain coefficient of each spectral line, laser spectrum, the averaged laser intensity, output power, chemical efficiency and the length of lasing zone.

Laser beam distribution system for the HiLASE Center

NASA Astrophysics Data System (ADS)

Macúchová, Karolina; Heřmánek, Jan; Kaufman, Jan; Muresan, Mihai-George; Růžička, Jan; Řeháková, Martina; Divoký, Martin; Švandrlík, Luděk.; Mocek, Tomáś

2017-12-01

We report recent progress in design and testing of a distribution system for high-power laser beam delivery developed within the HiLASE project of the IOP in the Czech Republic. Laser beam distribution system is a technical system allowing safe and precise distribution of different laser beams from laboratories to several experimental stations. The unique nature of HiLASE lasers requires new approach, which makes design of the distribution system a state-of-the-art challenge.

Gallium nitride nanotube lasers

DOE PAGES

Li, Changyi; Liu, Sheng; Hurtado, Antonio; ...

2015-01-01

Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

Innovative FEL schemes using variable-gap undulators

NASA Astrophysics Data System (ADS)

Schneidmiller, E. A.; Yurkov, M. V.

2017-06-01

We discuss theoretical background and experimental verification of advanced schemes for X-ray FELs using variable gap undulators (harmonic lasing self-seeded FEL, reverse taper etc.) Harmonic lasing in XFELs is an opportunity to extend operating range of existing and planned X-ray FEL user facilities. Contrary to nonlinear harmonic generation, harmonic lasing can provide much more intense, stable, and narrow-band FEL beam which is easier to handle due to the suppressed fundamental. Another interesting application of harmonic lasing is Harmonic Lasing Self-Seeded (HLSS) FEL that allows to improve longitudinal coherence and spectral power of a SASE FEL. Recently this concept was successfully tested at the soft X-ray FEL user facility FLASH in the wavelength range between 4.5 nm and 15 nm. That was also the first experimental demonstration of harmonic lasing in a high-gain FEL and at a short wavelength (before it worked only in infrared FEL oscillators). Another innovative scheme that was tested at FLASH2 is the reverse tapering that can be used to produce circularly polarized radiation from a dedicated afterburner with strongly suppressed linearly polarized radiation from the main undulator. This scheme can also be used for an efficient background-free production of harmonics in an afterburner. Experiments on the frequency doubling that allowed to reach the shortest wavelength at FLASH as well as on post-saturation tapering to produce a record intencity in XUV regime are also discussed.

Improving the efficiency of x-ray lasers

NASA Astrophysics Data System (ADS)

Tallents, Gregory J.; Zeitoun, Philippe; Behjat, A.; Demir, A.; Holden, M.; Krishnan, J.; Lewis, Ciaran L. S.; MacPhee, Andrew G.; Warwick, P. J.; Nantel, Marc; Jamelot, Gerard; Rus, Bedrich; Jaegle, Pierre; Klisnick, Annie; Goedtkindt, P.; Carillon, Antoine; Fill, Ernst E.; Li, Yuelin; Pretzler, Georg; Schloegl, Dieter; Steingruber, Juergen; Neely, David; Norreys, Peter A.; Key, Michael H.; Zhang, Jie; Pert, Geoffrey J.; Healy, S. B.; Plowes, J. A.

1995-09-01

Current successful approaches for achieving soft x-ray lasing typically require pumping laser pulses of duration approximately ns and energy approximately kJ (collisionally pumped schemes) or approximately ps pulses and powers of approximately several TW (recombination-pumped schemes). For applications, it is important to improve the efficiency of soft x-ray lasers and so reduce the required power of pumping lasers. The effect of pre- pulse on neon-like collisionally pumped lasers has been investigated using the LULI laser (Ecole Polytechnique, France). A small pre-pulse level approximately 10-3 of the main pulse energy was found to increase the J equals 0 minus 1 neon-like zinc laser output at 21 nm by an order-of-magnitude with a comparable increase in efficiency. A double pumping laser pulse on neon-like yttrium lasing output at 15 nm obtained with the VULCAN laser (Rutherford Appleton Laboratory, England) was also found to increase the x-ray lasing efficiency. With adiabatically cooled recombination lasing, it is shown that approximately 2 ps pulses are optimum for achieving the desired ionization balance for lasing output. The possibility of achieving recombination lasing at short wavelengths on lithium-like ions with longer pulse lasers has been investigated using the ASTERIX laser (Max-Planck Quantenoptik, Germany). These results are presented and interpreted to provide possible directions for improving the efficiency of x-ray lasers.

Miscellaneous Lasing Actions in Organo-Lead Halide Perovskite Films.

PubMed

Duan, Zonghui; Wang, Shuai; Yi, Ningbo; Gu, Zhiyuan; Gao, Yisheng; Song, Qinghai; Xiao, Shumin

2017-06-21

Lasing actions in organo-lead halide perovskite films have been heavily studied in the past few years. However, due to the disordered nature of synthesized perovskite films, the lasing actions are usually understood as random lasers that are formed by multiple scattering. Herein, we demonstrate the miscellaneous lasing actions in organo-lead halide perovskite films. In addition to the random lasers, we show that a single or a few perovskite microparticles can generate laser emissions with their internal resonances instead of multiple scattering among them. We experimentally observed and numerically confirmed whispering gallery (WG)-like microlasers in polygon shaped and other deformed microparticles. Meanwhile, owing to the nature of total internal reflection and the novel shape of the nanoparticle, the size of the perovskite WG laser can be significantly decreased to a few hundred nanometers. Thus, wavelength-scale lead halide perovskite lasers were realized for the first time. All of these laser behaviors are complementary to typical random lasers in perovskite film and will help the understanding of lasing actions in complex lead halide perovskite systems.

Ultrafast Pulse Generation in an Organic Nanoparticle-Array Laser.

PubMed

Daskalakis, Konstantinos S; Väkeväinen, Aaro I; Martikainen, Jani-Petri; Hakala, Tommi K; Törmä, Päivi

2018-04-11

Nanoscale coherent light sources offer potentially ultrafast modulation speeds, which could be utilized for novel sensors and optical switches. Plasmonic periodic structures combined with organic gain materials have emerged as promising candidates for such nanolasers. Their plasmonic component provides high intensity and ultrafast nanoscale-confined electric fields, while organic gain materials offer fabrication flexibility and a low acquisition cost. Despite reports on lasing in plasmonic arrays, lasing dynamics in these structures have not been experimentally studied yet. Here we demonstrate, for the first time, an organic dye nanoparticle-array laser with more than a 100 GHz modulation bandwidth. We show that the lasing modulation speed can be tuned by the array parameters. Accelerated dynamics is observed for plasmonic lasing modes at the blue side of the dye emission.

Fiber-Type Random Laser Based on a Cylindrical Waveguide with a Disordered Cladding Layer.

PubMed

Zhang, Wei Li; Zheng, Meng Ya; Ma, Rui; Gong, Chao Yang; Yang, Zhao Ji; Peng, Gang Ding; Rao, Yun Jiang

2016-05-25

This letter reports a fiber-type random laser (RL) which is made from a capillary coated with a disordered layer at its internal surface and filled with a gain (laser dye) solution in the core region. This fiber-type optical structure, with the disordered layer providing randomly scattered light into the gain region and the cylindrical waveguide providing confinement of light, assists the formation of random lasing modes and enables a flexible and efficient way of making random lasers. We found that the RL is sensitive to laser dye concentration in the core region and there exists a fine exponential relationship between the lasing intensity and particle concentration in the gain solution. The proposed structure could be a fine platform of realizing random lasing and random lasing based sensing.

Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phelps, Tommy J.; Lauf, Robert J.; Moon, Ji-Won

The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes duringmore » consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.« less

Internal optical bistability of quasi-two-dimensional semiconductor nanoheterostructures

NASA Astrophysics Data System (ADS)

Derevyanchuk, Oleksandr V.; Kramar, Natalia K.; Kramar, Valeriy M.

2018-01-01

We represent the results of numerical computations of the frequency and temperature domains of possible realization of internal optical bistability in flat quasi-two-dimensional semiconductor nanoheterostructures with a single quantum well (i.e., nanofilms). Particular computations have been made for a nanofilm of layered semiconductor PbI2 embedded in dielectric medium, i.e. ethylene-methacrylic acid (E-MAA) copolymer. It is shown that an increase in the nanofilm's thickness leads to a long-wave shift of the frequency range of the manifestation the phenomenon of bistability, to increase the size of the hysteresis loop, as well as to the expansion of the temperature interval at which the realization of this phenomenon is possible.

A DPL model of photo-thermal interaction in an infinite semiconductor material containing a spherical hole

NASA Astrophysics Data System (ADS)

Hobiny, Aatef D.; Abbas, Ibrahim A.

2018-01-01

The dual phase lag (DPL) heat transfer model is applied to study the photo-thermal interaction in an infinite semiconductor medium containing a spherical hole. The inner surface of the cavity was traction free and loaded thermally by pulse heat flux. By using the eigenvalue approach methodology and Laplace's transform, the physical variable solutions are obtained analytically. The numerical computations for the silicon-like semiconductor material are obtained. The comparison among the theories, i.e., dual phase lag (DPL), Lord and Shulman's (LS) and the classically coupled thermoelastic (CT) theory is presented graphically. The results further show that the analytical scheme can overcome mathematical problems by analyzing these problems.

Modified transverse phonon-helicon interaction in colloids laden semiconductor plasmas due to Bohm potential and Fermi degenerate pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Aartee, E-mail: aartee.sharma08@gmail.com; Yadav, N.; Ghosh, S.

2015-07-31

A detailed study of the quantum modification of acousto-helicon wave spectra due to Bohm potential and Fermi degenerate pressure in colloids laden semiconductor plasma has been presented. We have used quantum hydrodynamic model of plasmas to arrive at most general dispersion relation in presence of magnetic field. This dispersion relation has been analyzed in three different velocity regimes and the expressions for gain constants have been obtained. From the present study it has been concluded that the quantum effect and the magnetic field significantly modify the wave characteristics particularly in high doping regime in semiconductor plasma medium in presence ofmore » colloids in it.« less

Method and apparatus for tuning high power lasers

DOEpatents

Hutchinson, Donald P.; Vandersluis, Kenneth L.

1977-04-19

This invention relates to high power gas lasers that are adapted to be tuned to a desired lasing wavelength through the use of a gas cell to lower the gain at a natural lasing wavelength and "seeding" the laser with a beam from a low power laser which is lasing at the desired wavelength. This tuning is accomplished with no loss of power and produces a pulse with an altered pulse shape. It is potentially applicable to all gas lasers.

Measuring Two Key Parameters of H3 Color Centers in Diamond

NASA Technical Reports Server (NTRS)

Roberts, W. Thomas

2005-01-01

A method of measuring two key parameters of H3 color centers in diamond has been created as part of a continuing effort to develop tunable, continuous-wave, visible lasers that would utilize diamond as the lasing medium. (An H3 color center in a diamond crystal lattice comprises two nitrogen atoms substituted for two carbon atoms bonded to a third carbon atom. H3 color centers can be induced artificially; they also occur naturally. If present in sufficient density, they impart a yellow hue.) The method may also be applicable to the corresponding parameters of other candidate lasing media. One of the parameters is the number density of color centers, which is needed for designing an efficient laser. The other parameter is an optical-absorption cross section, which, as explained below, is needed for determining the number density. The present method represents an improvement over prior methods in which optical-absorption measurements have been used to determine absorption cross sections or number densities. Heretofore, in order to determine a number density from such measurements, it has been necessary to know the applicable absorption cross section; alternatively, to determine the absorption cross section from such measurements, it has been necessary to know the number density. If, as in this case, both the number density and the absorption cross section are initially unknown, then it is impossible to determine either parameter in the absence of additional information.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

PubMed

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stationary Shock Waves with Oscillating Front in Dislocation Systems of Semiconductors

NASA Astrophysics Data System (ADS)

Gestrin, S. G.; Shchukina, E. V.

2018-05-01

The paper presents a study of weakly nonlinear wave processes in the cylindrical region of a hole gas surrounding a negatively charged dislocation in an n-type semiconductor crystal. It is shown that shock waves propagating along the dislocation are the solutions of the Korteweg-de Vries-Burgers equation when the dispersion and dissipation of medium are taken into account. Estimates are obtained for the basic physical parameters characterizing the shock wave and the region inside the Reed cylinder.

Intracavity dispersion effect on timing jitter of ultralow noise mode-locked semiconductor based external-cavity laser.

PubMed

Gee, S; Ozharar, S; Plant, J J; Juodawlkis, P W; Delfyett, P J

2009-02-01

We report the generation of optical pulse trains with 380 as of residual timing jitter (1 Hz-1 MHz) from a mode-locked external-cavity semiconductor laser, through a combination of optimizing the intracavity dispersion and utilizing a high-power, low-noise InGaAsP quantum-well slab-coupled optical waveguide amplifier gain medium. This is, to our knowledge, the lowest residual timing jitter reported to date from an actively mode-locked laser.

Optical phase conjugation: principles, techniques, and applications

NASA Astrophysics Data System (ADS)

He, Guang S.

2002-05-01

Over the last three decades, optical phase conjugation (OPC) has been one of the major research subjects in the field of nonlinear optics and quantum electronics. OPC defines usually a special relationship between two coherent optical beams propagating in opposite directions with reversed wave front and identical transverse amplitude distributions. The unique feature of a pair of phase-conjugate beams is that the aberration influence imposed on the forward beam passed through an inhomogeneous or disturbing medium can be automatically removed for the backward beam passed through the same disturbing medium. To date there have been three major technical approaches that can efficiently produce the backward phase-conjugate beam. The first approach is based on the degenerate (or partially degenerate) four-wave mixing processes, the second is based on various backward simulated (Brillouin, Raman, Rayleigh-wing or Kerr) scattering processes, and the third is based on one-photon or multi-photon pumped backward stimulated emission (lasing) processes. Among these three different approaches, there is a common physical mechanism that plays the same essential role in generating a backward phase-conjugate beam, which is the formation of the induced holographic grating and the subsequent wave-front restoration via a backward reading beam. In most experimental studies, certain types of resonance enhancements of induced refractive-index changes are desirable for obtaining higher grating-refraction efficiency. The momentum of OPC studies has recently become even stronger because there are more prospective potentials and achievements for applications. OPC-associated techniques can be successfully utilized in many different application areas: such as high-brightness laser oscillator/amplifier systems, cavity-less lasing devices, laser target-aiming systems, aberration correction for coherent-light transmission and reflection through disturbing media, long distance optical fiber communications with ultra-high bit-rate, optical phase locking and coupling systems, and novel optical data storage and processing systems.

1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miah, M. J., E-mail: jarez.miah@tu-berlin.de; Posilovic, K.; Kalosha, V. P.

2014-10-13

High-brightness edge-emitting semiconductor lasers having a vertically extended waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) lasers with 9 μm stripe width and 2.64 mm cavity length yield highest to date single transverse mode output power for RW lasers in the 1060 nm range. The lasers provide 1.9 W single transverse mode optical power under continuous-wave (cw) operation with narrow beam divergences of 9° in lateral and 14° (full width at half maximum) in vertical direction. The beam quality factor M{sup 2} is less than 1.9 up to 1.9 W optical power. A maximum brightness of 72 MWcm{sup −2}sr{supmore » −1} is obtained. 100 μm wide and 3 mm long unpassivated broad area lasers provide more than 9 W optical power in cw operation.« less

Multistabilities and symmetry-broken one-color and two-color states in closely coupled single-mode lasers.

PubMed

Clerkin, Eoin; O'Brien, Stephen; Amann, Andreas

2014-03-01

We theoretically investigate the dynamics of two mutually coupled, identical single-mode semi-conductor lasers. For small separation and large coupling between the lasers, symmetry-broken one-color states are shown to be stable. In this case the light outputs of the lasers have significantly different intensities while at the same time the lasers are locked to a single common frequency. For intermediate coupling we observe stable symmetry-broken two-color states, where both lasers lase simultaneously at two optical frequencies which are separated by up to 150 GHz. Using a five-dimensional model, we identify the bifurcation structure which is responsible for the appearance of symmetric and symmetry-broken one-color and two-color states. Several of these states give rise to multistabilities and therefore allow for the design of all-optical memory elements on the basis of two coupled single-mode lasers. The switching performance of selected designs of optical memory elements is studied numerically.

Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

DOE PAGES

Liu, Sheng; Li, Changyi; Figiel, Jeffrey J.; ...

2015-04-27

In this paper, we report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ~7 GPa. The GaN NW lasers, with heights of 4–5 μm and diameters ~140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ~40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values,more » revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. Finally, this approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.« less

Design strategy for terahertz quantum dot cascade lasers.

PubMed

Burnett, Benjamin A; Williams, Benjamin S

2016-10-31

The development of quantum dot cascade lasers has been proposed as a path to obtain terahertz semiconductor lasers that operate at room temperature. The expected benefit is due to the suppression of nonradiative electron-phonon scattering and reduced dephasing that accompanies discretization of the electronic energy spectrum. We present numerical modeling which predicts that simple scaling of conventional quantum well based designs to the quantum dot regime will likely fail due to electrical instability associated with high-field domain formation. A design strategy adapted for terahertz quantum dot cascade lasers is presented which avoids these problems. Counterintuitively, this involves the resonant depopulation of the laser's upper state with the LO-phonon energy. The strategy is tested theoretically using a density matrix model of transport and gain, which predicts sufficient gain for lasing at stable operating points. Finally, the effect of quantum dot size inhomogeneity on the optical lineshape is explored, suggesting that the design concept is robust to a moderate amount of statistical variation.

Multistabilities and symmetry-broken one-color and two-color states in closely coupled single-mode lasers

NASA Astrophysics Data System (ADS)

Clerkin, Eoin; O'Brien, Stephen; Amann, Andreas

2014-03-01

We theoretically investigate the dynamics of two mutually coupled, identical single-mode semi-conductor lasers. For small separation and large coupling between the lasers, symmetry-broken one-color states are shown to be stable. In this case the light outputs of the lasers have significantly different intensities while at the same time the lasers are locked to a single common frequency. For intermediate coupling we observe stable symmetry-broken two-color states, where both lasers lase simultaneously at two optical frequencies which are separated by up to 150 GHz. Using a five-dimensional model, we identify the bifurcation structure which is responsible for the appearance of symmetric and symmetry-broken one-color and two-color states. Several of these states give rise to multistabilities and therefore allow for the design of all-optical memory elements on the basis of two coupled single-mode lasers. The switching performance of selected designs of optical memory elements is studied numerically.

Magnetic-Field-Assisted Terahertz Quantum Cascade Laser Operating up to 225 K

NASA Technical Reports Server (NTRS)

Wade, A.; Fedorov, G.; Smirnov, D.; Kumar, S.; Williams, B. S.; Hu, Q.; Reno, J. L.

2008-01-01

Advances in semiconductor bandgap engineering have resulted in the recent development of the terahertz quantum cascade laser1. These compact optoelectronic devices now operate in the frequency range 1.2-5 THz, although cryogenic cooling is still required2.3. Further progress towards the realization of devices operating at higher temperatures and emitting at longer wavelengths (sub-terahertz quantum cascade lasers) is difficult because it requires maintaining a population inversion between closely spaced electronic sub-bands (1 THz approx. equals 4 meV). Here, we demonstrate a magnetic-field-assisted quantum cascade laser based on the resonant-phonon design. By applying appropriate electrical bias and strong magnetic fields above 16 T, it is possible to achieve laser emission from a single device over a wide range of frequencies (0.68-3.33 THz). Owing to the suppression of inter-landau-level non-radiative scattering, the device shows magnetic field assisted laser action at 1 THz at temperatures up to 215 K, and 3 THz lasing up to 225 K.

Transient Melting and Recrystallization of Semiconductor Nanocrystals Under Multiple Electron–Hole Pair Excitation

DOE PAGES

Kirschner, Matthew S.; Hannah, Daniel C.; Diroll, Benjamin T.; ...

2017-07-28

Ultrafast optical pump, X-ray diffraction probe experiments were performed on CdSe nanocrystal (NC) colloidal dispersions as functions of particle size, polytype, and pump fluence. Bragg peak shifts relate heating and peak amplitude reduction confers lattice disordering. For smaller NCs, melting initiates upon absorption of as few as ~15 electron-hole pair excitations per NC on average (0.89 excitations/nm 3 for a 1.5-nm radius) with roughly the same excitation density inducing melting for all examined NCs. Diffraction intensity recovery kinetics, attributable to recrystallization, occur over hundreds of picoseconds with slower recoveries for larger particles. Zincblende and wurtzite NCs revert to initial structuresmore » following intense photoexcitation suggesting melting occurs primarily at the surface, as supported by simulations. Electronic structure calculations relate significant band gap narrowing with decreased crystallinity. Here, these findings reflect the need to consider the physical stability of nanomaterials and related electronic impacts in high intensity excitation applications such as lasing and solid-state lighting.« less

Transient Melting and Recrystallization of Semiconductor Nanocrystals Under Multiple Electron–Hole Pair Excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirschner, Matthew S.; Hannah, Daniel C.; Diroll, Benjamin T.

Ultrafast optical pump, X-ray diffraction probe experiments were performed on CdSe nanocrystal (NC) colloidal dispersions as functions of particle size, polytype, and pump fluence. Bragg peak shifts relate heating and peak amplitude reduction confers lattice disordering. For smaller NCs, melting initiates upon absorption of as few as ~15 electron-hole pair excitations per NC on average (0.89 excitations/nm 3 for a 1.5-nm radius) with roughly the same excitation density inducing melting for all examined NCs. Diffraction intensity recovery kinetics, attributable to recrystallization, occur over hundreds of picoseconds with slower recoveries for larger particles. Zincblende and wurtzite NCs revert to initial structuresmore » following intense photoexcitation suggesting melting occurs primarily at the surface, as supported by simulations. Electronic structure calculations relate significant band gap narrowing with decreased crystallinity. Here, these findings reflect the need to consider the physical stability of nanomaterials and related electronic impacts in high intensity excitation applications such as lasing and solid-state lighting.« less

Directed emission of CdSe nanoplatelets originating from strongly anisotropic 2D electronic structure

NASA Astrophysics Data System (ADS)

Scott, Riccardo; Heckmann, Jan; Prudnikau, Anatol V.; Antanovich, Artsiom; Mikhailov, Aleksandr; Owschimikow, Nina; Artemyev, Mikhail; Climente, Juan I.; Woggon, Ulrike; Grosse, Nicolai B.; Achtstein, Alexander W.

2017-12-01

Intrinsically directional light emitters are potentially important for applications in photonics including lasing and energy-efficient display technology. Here, we propose a new route to overcome intrinsic efficiency limitations in light-emitting devices by studying a CdSe nanoplatelets monolayer that exhibits strongly anisotropic, directed photoluminescence. Analysis of the two-dimensional k-space distribution reveals the underlying internal transition dipole distribution. The observed directed emission is related to the anisotropy of the electronic Bloch states governing the exciton transition dipole moment and forming a bright plane. The strongly directed emission perpendicular to the platelet is further enhanced by the optical local density of states and local fields. In contrast to the emission directionality, the off-resonant absorption into the energetically higher 2D-continuum of states is isotropic. These contrasting optical properties make the oriented CdSe nanoplatelets, or superstructures of parallel-oriented platelets, an interesting and potentially useful class of semiconductor-based emitters.

Transient Melting and Recrystallization of Semiconductor Nanocrystals Under Multiple Electron-Hole Pair Excitation.

PubMed

Kirschner, Matthew S; Hannah, Daniel C; Diroll, Benjamin T; Zhang, Xiaoyi; Wagner, Michael J; Hayes, Dugan; Chang, Angela Y; Rowland, Clare E; Lethiec, Clotilde M; Schatz, George C; Chen, Lin X; Schaller, Richard D

2017-09-13

Ultrafast optical pump, X-ray diffraction probe experiments were performed on CdSe nanocrystal (NC) colloidal dispersions as functions of particle size, polytype, and pump fluence. Bragg peak shifts related to heating and peak amplitude reduction associated with lattice disordering are observed. For smaller NCs, melting initiates upon absorption of as few as ∼15 electron-hole pair excitations per NC on average (0.89 excitations/nm 3 for a 1.5 nm radius) with roughly the same excitation density inducing melting for all examined NCs. Diffraction intensity recovery kinetics, attributable to recrystallization, occur over hundreds of picoseconds with slower recoveries for larger particles. Zincblende and wurtzite NCs revert to initial structures following intense photoexcitation suggesting melting occurs primarily at the surface, as supported by simulations. Electronic structure calculations relate significant band gap narrowing with decreased crystallinity. These findings reflect the need to consider the physical stability of nanomaterials and related electronic impacts in high intensity excitation applications such as lasing and solid-state lighting.

Handheld dual thermal neutron detector and gamma-ray spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stowe, Ashley C.; Burger, Arnold; Bhattacharya, Pijush

2017-05-02

A combined thermal neutron detector and gamma-ray spectrometer system, including: a first detection medium including a lithium chalcopyrite crystal operable for detecting neutrons; a gamma ray shielding material disposed adjacent to the first detection medium; a second detection medium including one of a doped metal halide, an elpasolite, and a high Z semiconductor scintillator crystal operable for detecting gamma rays; a neutron shielding material disposed adjacent to the second detection medium; and a photodetector coupled to the second detection medium also operable for detecting the gamma rays; wherein the first detection medium and the second detection medium do not overlapmore » in an orthogonal plane to a radiation flux. Optionally, the first detection medium includes a .sup.6LiInSe.sub.2 crystal. Optionally, the second detection medium includes a SrI.sub.2(Eu) scintillation crystal.« less

Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaptan, Y., E-mail: yuecel.kaptan@physik.tu-berlin.de; Herzog, B.; Schöps, O.

2014-11-10

The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find that a depopulation of the quantum dot ground state is followed by a drop in excited state lasing intensity. The magnitude of the drop is strongly dependent on the wavelength of the depletion pulse and the applied injection current. Numerical simulations based on laser rate equations reproduce the experimental results and explain the wavelength dependence by the different dynamics in lasing and non-lasing sub-ensembles within the inhomogeneously broadened quantum dots. At high injection levels, the observedmore » response even upon perturbation of the lasing sub-ensemble is small and followed by a fast recovery, thus supporting the capacity of fast modulation in dual-state devices.« less

Phase-locked bifrequency Raman lasing in a double-Λ system

NASA Astrophysics Data System (ADS)

Alaeian, Hadiseh; Shahriar, M. S.

2018-05-01

We show that it is possible to realize simultaneous Raman lasing at two different frequencies using a double-Λ system pumped by a bifrequency field. The bifrequency Raman lasers are phase-locked to one another and the beat-frequency matches the energy difference between the two metastable ground states. Akin to a conventional Raman laser, the bifrequency Raman lasers are expected to be subluminal. As such, these are expected to be highly stable against perturbations in cavity length and have quantum noise limited linewidths that are far below that of a conventional laser. Because of these properties, the bifrequency Raman lasers may find important applications in precision metrology, including atomic interferometry and magnetometry. The phase-locked Raman laser pair also represent a manifestation of lasing without inversion, albeit in a configuration that produces a pair of nondegenerate lasers simultaneously. This feature may enable lasing without inversion in frequency regimes not accessible using previous techniques of lasing without inversion. To elucidate the behavior of this laser pair, we develop an analytical model that describes the stimulated Raman interaction in a double-Λ system using an effective two-level transition. The approximation is valid as long as the excited states adiabatically follow the ground states, as verified by numerical simulations. The effective model is used to identify the optimal operating conditions for the bifrequency Raman lasing process. This model may also prove useful in other potential applications of the double-Λ system, including generation of squeezed light and spatial solitons.

Versatile tissue lasers based on high-Q Fabry-Pérot microcavities.

PubMed

Chen, Yu-Cheng; Chen, Qiushu; Zhang, Tingting; Wang, Wenjie; Fan, Xudong

2017-01-31

Biolasers are an emerging technology for next generation biochemical detection and clinical applications. Progress has recently been made to achieve lasing from biomolecules and single living cells. Tissues, which consist of cells embedded in an extracellular matrix, mimic more closely the actual complex biological environment in a living body and therefore are of more practical significance. Here, we developed a highly versatile tissue laser platform, in which tissues stained with fluorophores are sandwiched in a high-Q Fabry-Pérot microcavity. Distinct lasing emissions from muscle and adipose tissues stained respectively with fluorescein isothiocyanate (FITC) and boron-dipyrromethene (BODIPY), and hybrid muscle/adipose tissue with dual staining were achieved with a threshold of only ∼10 μJ mm -2 . Additionally, we investigated how the tissue structure/geometry, tissue thickness, and staining dye concentration affect the tissue laser. Lasing emission from FITC conjugates (FITC-phalloidin) that specifically target F-actin in muscle tissues was also realized. It is further found that, despite the large fluorescence spectral overlap between FITC and BODIPY in tissues, their lasing emissions could be clearly distinguished and controlled due to their narrow lasing bands and different lasing thresholds, thus enabling highly multiplexed detection. Our tissue laser platform can be broadly applicable to various types of tissues/diseases. It provides a new tool for a wide range of biological and biomedical applications, such as diagnostics/screening of tissues and identification/monitoring of biological transformations in tissue engineering.

Table-top two-color soft X-ray laser by means of Ni-like plasmas

NASA Astrophysics Data System (ADS)

Masoudnia, Leili; Ruiz-Lopez, Mabel; Bleiner, Davide

2016-04-01

Laser-produced Ni-like plasmas are known as active media for extreme ultraviolet lasing, with the flexibility to two-color lasing. Two-color laser generation is very complex at accelerator facilities. In this work, plasma lasing at the 3d94d1(J = 0) → 3d94p1(J = 1) (collisional-pumping process) and the 3d94f1(J = 1) → 3d94d1(J = 1) (photo-pumping process) transitions is studied experimentally and computationally. Several key characteristics of collisional- and photo-pumping laser, such as divergence, pointing stability, and intensity have been investigated. The measurements showed different pulse characteristics for the two lasing processes affected by plasma inhomogeneity in temperature and density. Analytical expressions of these characteristics for both collisional- and photo-pumping are derived. It is found that the plasma that maximizes the photo-pumping lasing is 20% hotter and 70% denser than the plasma that optimizes the collisional-pumping lasing. The gain of collisional pumping is ≈4 times higher than the gain for the photo-pumping. The gain lifetime is a factor of ≈5.2 larger for the monopole-pumping. Similarly, the gain thickness is a factor of ≈1.8 larger. It is also found that the gain build-up time for collisional- and photo-pumping is 0.7 ps and 0.9 ps, respectively, whereas the build-up length-scale is 11.5 μm and 6.3 μm, respectively.

Switching of Photonic Crystal Lasers by Graphene.

PubMed

Hwang, Min-Soo; Kim, Ha-Reem; Kim, Kyoung-Ho; Jeong, Kwang-Yong; Park, Jin-Sung; Choi, Jae-Hyuck; Kang, Ju-Hyung; Lee, Jung Min; Park, Won Il; Song, Jung-Hwan; Seo, Min-Kyo; Park, Hong-Gyu

2017-03-08

Unique features of graphene have motivated the development of graphene-integrated photonic devices. In particular, the electrical tunability of graphene loss enables high-speed modulation of light and tuning of cavity resonances in graphene-integrated waveguides and cavities. However, efficient control of light emission such as lasing, using graphene, remains a challenge. In this work, we demonstrate on/off switching of single- and double-cavity photonic crystal lasers by electrical gating of a monolayer graphene sheet on top of photonic crystal cavities. The optical loss of graphene was controlled by varying the gate voltage V g , with the ion gel atop the graphene sheet. First, the fundamental properties of graphene were investigated through the transmittance measurement and numerical simulations. Next, optically pumped lasing was demonstrated for a graphene-integrated single photonic crystal cavity at V g below -0.6 V, exhibiting a low lasing threshold of ∼480 μW, whereas lasing was not observed at V g above -0.6 V owing to the intrinsic optical loss of graphene. Changing quality factor of the graphene-integrated photonic crystal cavity enables or disables the lasing operation. Moreover, in the double-cavity photonic crystal lasers with graphene, switching of individual cavities with separate graphene sheets was achieved, and these two lasing actions were controlled independently despite the close distance of ∼2.2 μm between adjacent cavities. We believe that our simple and practical approach for switching in graphene-integrated active photonic devices will pave the way toward designing high-contrast and ultracompact photonic integrated circuits.

JPRS Report, Science & Technology, China.

DTIC Science & Technology

1992-08-20

nature of the nuclear medium. QCD [quantum chromodynamic] lattice gauge calculations have predicted the existence of a new phase of the nuclear medium...and A106 octahedra; the atoms Nb and Al are located at the vacants of the octahedra, but a fraction of Al in the lattice is replaced by Nb atoms, and...superlattice and quantum-well lattice dynamics and electron structure, transport processes in superlattice low-dimensionality systems, semiconductor

Controlling the gain contribution of background emitters in few-quantum-dot microlasers

NASA Astrophysics Data System (ADS)

Gericke, F.; Segnon, M.; von Helversen, M.; Hopfmann, C.; Heindel, T.; Schneider, C.; Höfling, S.; Kamp, M.; Musiał, A.; Porte, X.; Gies, C.; Reitzenstein, S.

2018-02-01

We provide experimental and theoretical insight into single-emitter lasing effects in a quantum dot (QD)-microlaser under controlled variation of background gain provided by off-resonant discrete gain centers. For that purpose, we apply an advanced two-color excitation concept where the background gain contribution of off-resonant QDs can be continuously tuned by precisely balancing the relative excitation power of two lasers emitting at different wavelengths. In this way, by selectively exciting a single resonant QD and off-resonant QDs, we identify distinct single-QD signatures in the lasing characteristics and distinguish between gain contributions of a single resonant emitter and a countable number of off-resonant background emitters to the optical output of the microlaser. Our work addresses the important question whether single-QD lasing is feasible in experimentally accessible systems and shows that, for the investigated microlaser, the single-QD gain needs to be supported by the background gain contribution of off-resonant QDs to reach the transition to lasing. Interestingly, while a single QD cannot drive the investigated micropillar into lasing, its relative contribution to the emission can be as high as 70% and it dominates the statistics of emitted photons in the intermediate excitation regime below threshold.

Investigation of Material Gain of In0.90Ga0.10As0.59P0.41/InP Lasing Nano-Heregostructure

NASA Astrophysics Data System (ADS)

Yadav, Rashmi; Lal, Pyare; Rahman, F.; Dalela, S.; Alvi, P. A.

2014-02-01

In this paper, we have proposed a step separate confinement heterostructure (SCH) based lasing nano-heterostructure In0.90Ga0.10As0.59P0.41/InP consisting of single quantum well (SQW) and investigated material gain theoretically within TE and TM polarization modes. In addition, the quasi Fermi levels in the conduction and valence bands along with other lasing characteristics like anti-guiding factor, refractive index change with carrier density and differential gain have also been investigated and reported. Moreover, the behavior of quasi Fermi levels in respective bands has also been correlated with the material gain. Strain dependent study on material gain and refractive index change has also been reported. Interestingly, strain has been reported to play a very important role in shifting the lasing wavelength of TE mode to TM mode. The results investigated in the work suggest that the proposed unstrained nano-heterostructure is very suitable as a source for optical fiber based communication systems due to its lasing wavelengths achieved at 1.35 μm within TM mode, while 1.40 μm within TE mode.

Lasing in robust cesium lead halide perovskite nanowires

PubMed Central

Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; Wong, Andrew B.; Dou, Letian; Ma, Jie; Wang, Lin-Wang; Leone, Stephen R.; Yang, Peidong

2016-01-01

The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic–inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored and handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry–Pérot lasing occurs in CsPbBr3 nanowires with an onset of 5 μJ cm−2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 109 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication. PMID:26862172

Random lasing actions in self-assembled perovskite nanoparticles

NASA Astrophysics Data System (ADS)

Liu, Shuai; Sun, Wenzhao; Li, Jiankai; Gu, Zhiyuan; Wang, Kaiyang; Xiao, Shumin; Song, Qinghai

2016-05-01

Solution-based perovskite nanoparticles have been intensively studied in the past few years due to their applications in both photovoltaic and optoelectronic devices. Here, based on the common ground between solution-based perovskite and random lasers, we have studied the mirrorless lasing actions in self-assembled perovskite nanoparticles. After synthesis from a solution, discrete lasing peaks have been observed from optically pumped perovskites without any well-defined cavity boundaries. We have demonstrated that the origin of the random lasing emissions is the scattering between the nanostructures in the perovskite microplates. The obtained quality (Q) factors and thresholds of random lasers are around 500 and 60 μJ/cm2, respectively. Both values are comparable to the conventional perovskite microdisk lasers with polygon-shaped cavity boundaries. From the corresponding studies on laser spectra and fluorescence microscope images, the lasing actions are considered random lasers that are generated by strong multiple scattering in random gain media. In additional to conventional single-photon excitation, due to the strong nonlinear effects of perovskites, two-photon pumped random lasers have also been demonstrated for the first time. We believe this research will find its potential applications in low-cost coherent light sources and biomedical detection.

Composition-Graded Cesium Lead Halide Perovskite Nanowires with Tunable Dual-Color Lasing Performance.

PubMed

Huang, Ling; Gao, Qinggang; Sun, Ling-Dong; Dong, Hao; Shi, Shuo; Cai, Tong; Liao, Qing; Yan, Chun-Hua

2018-05-21

Cesium lead halide (CsPbX 3 ) perovskite has emerged as a promising low-threshold multicolor laser material; however, realizing wavelength-tunable lasing output from a single CsPbX 3 nanostructure is still constrained by integrating different composition. Here, the direct synthesis of composition-graded CsPbBr x I 3- x nanowires (NWs) is reported through vapor-phase epitaxial growth on mica. The graded composition along the NW, with an increased Br/I from the center to the ends, comes from desynchronized deposition of cesium lead halides and temperature-controlled anion-exchange reaction. The graded composition results in varied bandgaps along the NW, which induce a blueshifted emission from the center to the ends. As an efficient gain media, the nanowire exerts position-dependent lasing performance, with a different color at the ends and center respectively above the threshold. Meanwhile, dual-color lasing with a wavelength separation of 35 nm is activated simultaneously at a site with an intermediate composition. This position-dependent dual-color lasing from a single nanowire makes these metal halide perovskites promising for applications in nanoscale optical devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantifying the statistical complexity of low-frequency fluctuations in semiconductor lasers with optical feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiana-Alsina, J.; Torrent, M. C.; Masoller, C.

Low-frequency fluctuations (LFFs) represent a dynamical instability that occurs in semiconductor lasers when they are operated near the lasing threshold and subject to moderate optical feedback. LFFs consist of sudden power dropouts followed by gradual, stepwise recoveries. We analyze experimental time series of intensity dropouts and quantify the complexity of the underlying dynamics employing two tools from information theory, namely, Shannon's entropy and the Martin, Plastino, and Rosso statistical complexity measure. These measures are computed using a method based on ordinal patterns, by which the relative length and ordering of consecutive interdropout intervals (i.e., the time intervals between consecutive intensitymore » dropouts) are analyzed, disregarding the precise timing of the dropouts and the absolute durations of the interdropout intervals. We show that this methodology is suitable for quantifying subtle characteristics of the LFFs, and in particular the transition to fully developed chaos that takes place when the laser's pump current is increased. Our method shows that the statistical complexity of the laser does not increase continuously with the pump current, but levels off before reaching the coherence collapse regime. This behavior coincides with that of the first- and second-order correlations of the interdropout intervals, suggesting that these correlations, and not the chaotic behavior, are what determine the level of complexity of the laser's dynamics. These results hold for two different dynamical regimes, namely, sustained LFFs and coexistence between LFFs and steady-state emission.« less

XeCl Avalanche discharge laser employing Ar as a diluent

DOEpatents

Sze, Robert C.

1981-01-01

A XeCl avalanche discharge exciplex laser which uses a gaseous lasing starting mixture of: (0.2%-0.4% chlorine donor/2.5%-10% Xe/97.3%-89.6% Ar). The chlorine donor normally comprises HCl but can also comprise CCl.sub.4 BCl.sub.3. Use of Ar as a diluent gas reduces operating pressures over other rare gas halide lasers to near atmospheric pressure, increases output lasing power of the XeCl avalanche discharge laser by 30% to exceed KrF avalanche discharge lasing outputs, and is less expensive to operate.

Multiwavelength ultralow-threshold lasing in quantum dot photonic crystal microcavities.

PubMed

Chakravarty, S; Bhattacharya, P; Chakrabarti, S; Mi, Z

2007-05-15

We demonstrate multiwavelength lasing of resonant modes in linear (L3) microcavities in a triangular-lattice 2D photonic crystal (PC) slab. The broad spontaneous emission spectrum from coupled quantum dots, modified by the PC microcavity, is studied as a function of the intensity of incident optical excitation. We observe lasing with an ultralow-threshold power of approximately 600 nW and an output efficiency of approximately 3% at threshold. Two other resonant modes exhibit weaker turnon characteristics and thresholds of approximately 2.5 and 200 microW, respectively.

Biomaterials in light amplification

NASA Astrophysics Data System (ADS)

Mysliwiec, Jaroslaw; Cyprych, Konrad; Sznitko, Lech; Miniewicz, Andrzej

2017-03-01

Biologically produced or inspired materials can serve as optical gain media, i.e. they can exhibit the phenomenon of light amplification. Some of these materials, under suitable dye-doping and optical pumping conditions, show lasing phenomena. The emerging branch of research focused on obtaining lasing action in highly disordered and highly light scattering materials, i.e. research on random lasing, is perfectly suited for biological materials. The use of biomaterials in light amplification has been extensively reported in the literature. In this review we attempt to report on progress in the development of biologically derived systems able to show the phenomena of light amplification and random lasing together with the contribution of our group to this field. The rich world of biopolymers modified with molecular aggregates and nanocrystals, and self-organized at the nanoscale, offers a multitude of possibilities for tailoring luminescent and light scattering properties that are not easily replicated in conventional organic or inorganic materials. Of particular importance and interest are light amplification and lasing, or random lasing studies in biological cells and tissues. In this review we will describe nucleic acids and their complexes employed as gain media due to their favorable optical properties and ease of manipulation. We will report on research conducted on various biomaterials showing structural analogy to nucleic acids such as fluorescent proteins, gelatins in which the first distributed feedback laser was realized, and also amyloids or silks, which, due to their dye-doped fiber-like structure, allow for light amplification. Other materials that were investigated in that respect include polysaccharides, like starch exhibiting favorable photostability in comparison to other biomaterials, and chitosan, which forms photonic crystals or cellulose. Light amplification and random lasing was not only observed in processed biomaterials but also in living cells and tissues or separated phase systems like phosphatydylcholine liposomes. All of the above-mentioned light amplification possibilities of biomaterials also have potential for several interesting applications in biology, medicine, sensing and imaging, which will be described and discussed in this review.

The use of laser in hysteroscopic surgery.

PubMed

Nappi, Luigi; Sorrentino, Felice; Angioni, Stefano; Pontis, Alessandro; Greco, Pantaleo

2016-12-01

The term laser, an acronym for light amplification by stimulated emission of radiation, covers a wide range of devices. Lasers are commonly described by the emitted wavelength that covers the entire light spectrum from infrared to ultraviolet and the active lasing medium. Currently, over forty different types of lasers have found application in medicine. Moreover, advances made by gynecologists in the field of operative hysteroscopy have developed a very great interest in the use of surgical lasers. Technical improvements in hysteroscopes and lasers have led several gynecologists to evaluate their use in the surgical treatment of intrauterine pathologies. This narrative review concerns the most common used lasers in hysteroscopic surgery with particular attention to the latest promising results of the laser technology.

Low-concentrated solar-pumped laser via transverse excitation fiber-laser geometry.

PubMed

Masuda, Taizo; Iyoda, Mitsuhiro; Yasumatsu, Yuta; Endo, Masamori

2017-09-01

We demonstrate an extremely low-concentrated solar-pumped laser (SPL) using a fiber laser with transverse excitation geometry. A low concentration factor is highly desired in SPLs to eliminate the need for precise solar tracking and to considerably increase the practical applications of SPL technology. In this Letter, we have exploited the intrinsic low-loss property of silica fibers to compensate for the extremely low gain coefficient of the weakly pumped active medium. A 40 m long Nd 3+ -doped fiber coil is packed in a ring-shaped chamber filled with a sensitizer solution. We demonstrated a lasing threshold that is 15 times the concentration of natural sunlight and two orders of magnitude smaller than those of conventional SPLs.

Compact Mach-Zehnder interferometer based on photonic crystal fiber and its application in switchable multi-wavelength fiber laser

NASA Astrophysics Data System (ADS)

Chen, Weiguo; Lou, Shuqin; Wang, Liwen; Li, Honglei; Guo, Tieying; Jian, Shuisheng

2009-08-01

The compact Mach-Zehnder interferometer is proposed by splicing a section of photonic crystal fiber (PCF) and two pieces of single mode fiber (SMF) with the air-holes of PCF intentionally collapsed in the vicinity of the splices. The depedence of the fringe spacing on the length of PCF is investigated. Based on the Mach-Zehnder interferometer as wavelength-selective filter, a switchable dual-wavelength fiber ring laser is demonstrated with a homemade erbiumdoped fiber amplifier (EDFA) as the gain medium at room temperature. By adjusting the states of the polarization controller (PC) appropriately, the laser can be switched among the stable single-and dual -wavelength lasing operations by exploiting polarization hole burning (PHB) effect.

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Influence of noise and spread of resonance frequencies on phase locking of optically coupled lasers

NASA Astrophysics Data System (ADS)

Bel'dyugin, Igor'M.; Zolotarev, M. V.; Shinkareva, I. V.

1991-12-01

A statistical analysis was made of the simultaneous influence of an external noise and of the spread of resonance frequencies on the phase locking of optically coupled lasers under conditions of long-range and short-range interaction in terms of the theory of critical phenomena. Studies were made of the behavior of an order parameter (the total amplitude of the fields of an array of lasers), and of the stability and correlation relationships between lasers for cophasal and antiphase lasing regimes. It was found that the locking band of the lasers could be increased substantially by detuning the phase-locking frequency from the center of the active medium profile.

Metallic nanoshells with semiconductor cores: optical characteristics modified by core medium properties.

PubMed

Bardhan, Rizia; Grady, Nathaniel K; Ali, Tamer; Halas, Naomi J

2010-10-26

It is well-known that the geometry of a nanoshell controls the resonance frequencies of its plasmon modes; however, the properties of the core material also strongly influence its optical properties. Here we report the synthesis of Au nanoshells with semiconductor cores of cuprous oxide and examine their optical characteristics. This material system allows us to systematically examine the role of core material on nanoshell optical properties, comparing Cu(2)O core nanoshells (ε(c) ∼ 7) to lower core dielectric constant SiO(2) core nanoshells (ε(c) = 2) and higher dielectric constant mixed valency iron oxide nanoshells (ε(c) = 12). Increasing the core dielectric constant increases nanoparticle absorption efficiency, reduces plasmon line width, and modifies plasmon energies. Modifying the core medium provides an additional means of tailoring both the near- and far-field optical properties in this unique nanoparticle system.

Phase locking of a semiconductor double-quantum-dot single-atom maser

NASA Astrophysics Data System (ADS)

Liu, Y.-Y.; Hartke, T. R.; Stehlik, J.; Petta, J. R.

2017-11-01

We experimentally study the phase stabilization of a semiconductor double-quantum-dot (DQD) single-atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise L =-99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is ≈8 kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime.

Realizing high-quality ultralarge momentum states and ultrafast topological transitions using semiconductor hyperbolic metamaterials

DOE PAGES

Campione, Salvatore; Liu, Sheng; Luk, Ting S.; ...

2015-08-05

We employ both the effective medium approximation (EMA) and Bloch theory to compare the dispersion properties of semiconductor hyperbolic metamaterials (SHMs) at mid-infrared frequencies and metallic hyperbolic metamaterials (MHMs) at visible frequencies. This analysis reveals the conditions under which the EMA can be safely applied for both MHMs and SHMs. We find that the combination of precise nanoscale layering and the longer infrared operating wavelengths puts the SHMs well within the effective medium limit and, in contrast to MHMs, allows for the attainment of very high photon momentum states. Additionally, SHMs allow for new phenomena such as ultrafast creation ofmore » the hyperbolic manifold through optical pumping. Furthermore, we examine the possibility of achieving ultrafast topological transitions through optical pumping which can photo-dope appropriately designed quantum wells on the femtosecond time scale.« less

Evaluation of sub-surface penetration and bonding durability of self-etching primer systems to Er:YAG laser treated cervical dentin.

PubMed

He, Zhengdi; Chen, Lingling; Shimada, Yasushi; Tagami, Junji; Ruan, Shuangchen

2017-03-31

This study aimed to investigate self-etching bonding systems penetrating in sub-surface dentin layer after Er:YAG laser irradiation and micro-shear bonding durability over a period of 1 year. Dentin slices obtained from extracted human third molars were prepared. Two self-etching adhesive systems were evaluated: Clearfil SE Bond and Clearfil Tri-S Bond. Specimens were tested for micro-shear bond strength with one of the following treatments: Er:YAG laser irradiation and 600-grit silicon paper polishing at 24 h, 7 days, 6 months and 1 year. The adhesive interfaces between bonding agents and lased cervical dentin were studied. No hybrid layer could be observed for lased dentin. The slim resin tags could be seen penetrating through the lased subsurface layer. Bond strength to lased dentin after 6 months and 1 year were significantly decreased (p<0.05).

Amplified emission and lasing in a plasmonic nanolaser with many three-level molecules

NASA Astrophysics Data System (ADS)

Zhang, Yuan; Mølmer, Klaus

2018-01-01

Steady-state plasmonic lasing is studied theoretically for a system consisting of many dye molecules arranged regularly around a gold nanosphere. A three-level model with realistic molecular dissipation is employed to analyze the performance as a function of the pump field amplitude and number of molecules. Few molecules and moderate pumping produce a single narrow emission peak because the excited molecules transfer energy to a single dipole plasmon mode by amplified spontaneous emission. Under strong pumping, the single peak splits into broader and weaker emission peaks because two molecular excited levels interfere with each other through coherent coupling with the pump field and with the dipole plasmon field. A large number of molecules gives rise to a Poisson-like distribution of plasmon number states with a large mean number characteristic of lasing action. These characteristics of lasing, however, deteriorate under strong pumping because of the molecular interference effect.

LASE Observations of Interactions Between African Easterly Waves and the Saharan Air Layer

NASA Technical Reports Server (NTRS)

Ismail, Syed; Ferrare, Richard; Browell, Edward; Kooi, Susan; Biswas, Mrinal; Krishnamurti, T. N.; Notari, Anthony; Heymsfield, Andrew; Butler, Carolyn; Burton, Sharon;

The effects of cooling systems on CO2-lased human enamel.

PubMed

Lian, H J; Lan, W H; Lin, C P

1996-12-01

The thermal effects on dentin during CO2 laser irradiation on human enamel were investigated. To simulate the clinical practice, two cooling methods (air and water spray) were applied immediately after laser exposure, whereas one group without cooling was served as control. Three hundred and sixty uniform tooth blocks were obtained from freshly extracted human third molars. Temperature change measurements were made via electrical thermocouple implanted within the tooth block 2 mm away from the enamel surface. Experimental treatments consisted of lasing without cooling, lasing with 0.5-ml/sec water cooling, and lasing with 15-psi air cooling. Our results indicated that (1) both air- and water-cooling groups could reduce temperature elevation significantly; (2) the larger power energy resulted in the higher temperature elevation. In conclusion, for CO2 laser irradiation on human enamel both water- and air-cooling methods may be effective on prevention of thermal damage of pulp.

A cascaded silicon Raman laser

NASA Astrophysics Data System (ADS)

Rong, Haisheng; Xu, Shengbo; Cohen, Oded; Raday, Omri; Lee, Mindy; Sih, Vanessa; Paniccia, Mario

2008-03-01

One of the major advantages of Raman lasers is their ability to generate coherent light in wavelength regions that are not easily accessible with other conventional types of lasers. Recently, efficient Raman lasing in silicon in the near-infrared region has been demonstrated, showing great potential for realizing low-cost, compact, room-temperature lasers in the mid-infrared region. Such lasers are highly desirable for many applications, ranging from trace-gas sensing, environmental monitoring and biomedical analysis, to industrial process control, and free-space communications. Here we report the first experimental demonstration of cascaded Raman lasing in silicon, opening the path to extending the lasing wavelength from the near- to mid-infrared region. Using a 1,550-nm pump source, we achieve stable, continuous-wave, second-order cascaded lasing at 1,848 nm with an output power exceeding 5 mW. The laser operates in single mode, and the laser linewidth is measured to be <2.5 MHz.

Photophysical and lasing properties of new analogs of the boron-dipyrromethene laser dye pyrromethene 567 incorporated into or covalently bounded to solid matrices of poly(methyl methacrylate).

PubMed

López Arbeloa, F; Bañuelos Prieto, J; López Arbeloa, I; Costela, A; García-Moreno, I; Gómez, C; Amat-Guerri, F; Liras, M; Sastre, R

2003-07-01

The photophysical, lasing and thermostability properties of newly synthesized analogs of the commercial dye pyrromethene 567 (PM567) have been measured in polymeric matrices of poly(methyl methacrylate) both when used as a dopant and when covalently bounded to the polymeric chain. These analogs have an acetoxy or a polymerizable methacryloyloxy group at the end of a polymethylene chain at Position 8 of the PM567 chromophore core. Clear correlations between photophysical and lasing characteristics are observed. Linking chain lengths with three or more methylene units give the highest fluorescence quantum yields (as high as 0.89) and lasing efficiencies (as high as 41%). The covalent linkage of the chromophore to the polymeric chain via the methacryloyloxy group improves the photostability of the PM567 chromophore.

Analysis of lasers as a solution to efficiency droop in solid-state lighting

DOE PAGES

Chow, Weng W.; Crawford, Mary H.

2015-10-06

This letter analyzes the proposal to mitigate the efficiency droop in solid-state light emitters by replacing InGaN light-emitting diodes (LEDs) with lasers. The argument in favor of this approach is that carrier-population clamping after the onset of lasing limits carrier loss to that at threshold, while stimulated emission continues to grow with injection current. A fully quantized (carriers and light) theory that is applicable to LEDs and lasers (above and below threshold) is used to obtain a quantitative evaluation. The results confirm the potential advantage of higher laser output power and efficiency above lasing threshold, while also indicating disadvantages includingmore » low efficiency prior to lasing onset, sensitivity of lasing threshold to temperature, and the effects of catastrophic laser failure. As a result, a solution to some of these concerns is suggested that takes advantage of recent developments in nanolasers.« less

Thermally and optically tunable lasing properties from dye-doped holographic polymer dispersed liquid crystal in capillaries

NASA Astrophysics Data System (ADS)

Chen, Maozhou; Dai, Haitao; Wang, Dongshuo; Yang, Yue; Luo, Dan; Zhang, Xiaodong; Liu, Changlong

2018-03-01

In this paper, we investigated tunable lasing properties from the dye-doped holographic polymer dispersed liquid crystal (HPDLC) gratings in capillaries with thermal and optical manners. The thermally tunable range of the lasing from the dye-doped HPDLC reached 8.60 nm with the temperature ranging from 23 °C to 50 °C. The optically tunable laser emission was achieved by doping azo-dye in HPDLC. The transition of azo-dye from trans- to cis-state could induce the reorientation of LC molecules after UV light irradiation, which resulted in the variation of refractive index contrast of LC-rich/polymer-rich layer in HPDLC. Experimentally, the emission wavelength of lasing showed a blueshift (about 2 nm) coupled with decreasing output intensities. The tunable laser based on HPDLC may enable more applications in laser displays, optical communication, biosensors, etc.

Electron transporting water-gated thin film transistors

NASA Astrophysics Data System (ADS)

Al Naim, Abdullah; Grell, Martin

2012-10-01

We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs.

Positron beam studies of solids and surfaces: A summary

NASA Astrophysics Data System (ADS)

Coleman, P. G.

2006-02-01

A personal overview is given of the advances in positron beam studies of solids and surfaces presented at the 10th International Workshop on Positron Beams, held in Doha, Qatar, in March 2005. Solids studied include semiconductors, metals, alloys and insulators, as well as biophysical systems. Surface studies focussed on positron annihilation-induced Auger electron spectroscopy (PAES), but interesting applications of positron-surface interactions in fields as diverse as semiconductor technology and studies of the interstellar medium serve to illustrate once again the breadth of scientific endeavour covered by slow positron beam investigations.

Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

NASA Astrophysics Data System (ADS)

Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

2012-09-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously considered inaccessible.

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

NASA Technical Reports Server (NTRS)

Liu, Ansheng; Ning, Cun-Zheng

1999-01-01

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Properties of excited states in organic light emitting diodes and lasers

NASA Astrophysics Data System (ADS)

Giebink, Noel C.

The field of organic semiconductors has grown rapidly over the past decade with the development of light emitting diodes, solar cells, and lasers that promise a new generation of low-cost, flexible optoelectronic devices. In each case, the behavior of molecular excited states, or excitons, is of fundamental importance. The present study explores the nature and interactions of such excited states in the attempt to develop an electrically pumped organic semiconductor laser, and to improve the performance and operational stability of organic light emitting diodes. We begin by investigating intrinsic loss processes in optically pumped organic semiconductor lasers and demonstrate that exciton annihilation implies a fundamental limit that will prevent lasing by electrical injection in currently known materials. Searching for an alternative approach to reach threshold leads us to study metastable geminate charge pairs, where we find that optically generated excitons can be accumulated over time in an external electric field via these intermediate states. Upon field turn-off, the excitons are immediately restored, leading to a sudden burst of excitation density over 30 times higher than that generated by the pump alone. Unfortunately, we identify limitations that have thus far prevented reaching laser threshold with this technique. In a parallel push toward high power density, we investigate the origins of quantum efficiency roll-off in organic light emitting diodes (OLEDs) and find that it is dominated by loss of charge balance in the majority of fluorescent and phosphorescent devices. The second major theme of this work involves understanding the intrinsic modes of OLED operational degradation. Based on extensive modeling and supported directly by experimental evidence, we identify exciton-charge carrier annihilation reactions as a principle degradation pathway. Exploiting the diffusion of triplet excitons, we show that fluorescence and phosphorescence can be combined to increase the operational lifetime of white OLEDs and still retain the potential for unity internal quantum efficiency.

Solar pumped laser

NASA Technical Reports Server (NTRS)

Lee, J. H.; Hohl, F.; Weaver, W. R. (Inventor)

1984-01-01

A solar pumped laser is described in which the lasant is a gas that will photodissociate and lase when subjected to sunrays. Sunrays are collected and directed onto the gas lasant to cause it to lase. Applications to laser propulsion and laser power transmission are discussed.

Templated Sphere Phase Liquid Crystals for Tunable Random Lasing

PubMed Central

Chen, Ziping; Hu, Dechun; Chen, Xingwu; Zeng, Deren; Lee, Yungjui; Chen, Xiaoxian; Lu, Jiangang

2017-01-01

A sphere phase liquid crystal (SPLC) composed of three-dimensional twist structures with disclinations among them exists between isotropic phase and blue phase in a very narrow temperature range, about several degrees centigrade. A low concentration polymer template is applied to improve the thermal stability of SPLCs and broadens the temperature range to more than 448 K. By template processing, a wavelength tunable random lasing is demonstrated with dye doped SPLC. With different polymer concentrations, the reconstructed SPLC random lasing may achieve more than 40 nm wavelength continuous shifting by electric field modulation. PMID:29140283

Rainbow glare by retinal imaging

NASA Astrophysics Data System (ADS)

Sun, Han-Ying; Chiang, Yao-Ting; Yeh, Shang-Min; Huang, Shuan-Yu; Horng, Chi-Ting; Wang, Hsiang-Chen

2016-07-01

This study aims to determine whether IntraLase surgery can cause rainbow glare. Monte-Carlo ray tracing method is used to study visual conditions of an ordered microstructure array on the cornea. A corneal flap in the simulated eye model can generate numerous microbubbles caused by IntraLase surgery. Moreover, this study evaluates the visual performance under different conditions such as the size and interval of the microbubble structure on the cornea with vary incident angles and diameters of light. The results of this study can help elucidate the real cause of rainbow glare as a side effect of IntraLase.

Interference stabilization of atoms in a strong laser field for obtaining inversion and lasing in the visible and VUV frequency ranges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogatskaya, A. V., E-mail: annabogatskaya@gmail.com; Volkova, E. A.; Popov, A. M.

2016-09-15

The interference stabilization of Rydberg atoms in strong laser fields is proposed for producing a plasma channel with the inverse population. Inversion between a group of Rydberg levels and low-lying excited levels and the ground state permits amplification and lasing in the IR, visible, and VUV frequency ranges. The lasing and light amplification processes in the plasma channel are analyzed using rate equations and the efficiency of this method is compared with that in the usual method for high harmonic generation during rescattering of electrons by a parent ion.

Frequency combs with weakly lasing exciton-polariton condensates.

PubMed

Rayanov, K; Altshuler, B L; Rubo, Y G; Flach, S

2015-05-15

We predict the spontaneous modulated emission from a pair of exciton-polariton condensates due to coherent (Josephson) and dissipative coupling. We show that strong polariton-polariton interaction generates complex dynamics in the weak-lasing domain way beyond Hopf bifurcations. As a result, the exciton-polariton condensates exhibit self-induced oscillations and emit an equidistant frequency comb light spectrum. A plethora of possible emission spectra with asymmetric peak distributions appears due to spontaneously broken time-reversal symmetry. The lasing dynamics is affected by the shot noise arising from the influx of polaritons. That results in a complex inhomogeneous line broadening.

Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Babichev, A. V.; Karachinsky, L. Ya.

2015-11-15

The lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping are demonstrated. The quantum-cascade laser heterostructure is grown by molecular-beam epitaxy technique. Despite the relatively short laser cavity length and high level of external loss the laser shows the lasing in the temperature range of 80–220 K. The threshold current density below 4 kA/cm{sup 2} at 220 K with the characteristic temperature T{sub 0} = 123 K was demonstrated.

XeCl avalanche discharge laser employing Ar as a diluent

DOEpatents

Sze, R.C.

1979-10-10

A XeCl avalanche discharge exciplex laser which uses a gaseous lasing starting mixture of: 0.2 to 0.4% chlorine donor/2.5% to 10% Xe/97.3% to 89.6% Ar) is provided. The chlorine donor normally comprises HCl but can also comprise CCl/sub 4/ BCl/sub 3/. Use of Ar as a diluent gas reduces operating pressures over other rare gas halide lasers to near atmospheric pressure, increases output lasing power of the XeCl avalanche discharge laser by 30% to exceed KrF avalanche discharge lasing outputs, and is less expensive to operate.

Room-Temperature Low-Threshold Lasing from Monolithically Integrated Nanostructured Porous Silicon Hybrid Microcavities.

PubMed

Robbiano, Valentina; Paternò, Giuseppe M; La Mattina, Antonino A; Motti, Silvia G; Lanzani, Guglielmo; Scotognella, Francesco; Barillaro, Giuseppe

2018-05-22

Silicon photonics would strongly benefit from monolithically integrated low-threshold silicon-based laser operating at room temperature, representing today the main challenge toward low-cost and power-efficient electronic-photonic integrated circuits. Here we demonstrate low-threshold lasing from fully transparent nanostructured porous silicon (PSi) monolithic microcavities (MCs) infiltrated with a polyfluorene derivative, namely, poly(9,9-di- n-octylfluorenyl-2,7-diyl) (PFO). The PFO-infiltrated PSiMCs support single-mode blue lasing at the resonance wavelength of 466 nm, with a line width of ∼1.3 nm and lasing threshold of 5 nJ (15 μJ/cm 2 ), a value that is at the state of the art of PFO lasers. Furthermore, time-resolved photoluminescence shows a significant shortening (∼57%) of PFO emission lifetime in the PSiMCs, with respect to nonresonant PSi reference structures, confirming a dramatic variation of the radiative decay rate due to a Purcell effect. Our results, given also that blue lasing is a worst case for silicon photonics, are highly appealing for the development of low-cost, low-threshold silicon-based lasers with wavelengths tunable from visible to the near-infrared region by simple infiltration of suitable emitting polymers in monolithically integrated nanostructured PSiMCs.

CW 3μm lasing via two-photon pumping in cesium vapor with a 1W source

NASA Astrophysics Data System (ADS)

Haluska, Nathan D.; Rice, Christopher A.; Perram, Glen P.

2018-02-01

We report the first CW lasing from two-photon pumping via a virtual state. Pulsed and the CW lasing of the 3096 nm 72 P1/2 to 72 S1/2 line are observed from degenerate two-photon pumping of the cesium 72 S1/2 to 62 D3/2 transition. High intensity pulses excite over 17 lasing wavelengths. Under lower intensity CW excitation, 3 μm lasing is still observed with efficiencies of 0.7%. CW experiments utilized a Cs heat pipe at 150 °C to 270 °C, and a highly-focused, single pass, Ti-Sapphire pump with no aid of a cavity. Unlike normal DPALS, this architecture does not require buffer gas, and heat is released optically so a flowing system is not required. Both suggest a very simple device with excellent beam quality is possible. This proof of concept can be greatly enhanced with more optimal conditions such as non-degenerate pumping to further increase the two-photon pump cross section and the addition of a cavity to improve mode volume overlap. These improvements may lead to an increase in efficiencies to a theoretical maximum of 14%. Results suggest two-photon pumping with diodes is feasible.

Evaluation of primary tooth enamel surface morphology and microhardness after Nd:YAG laser irradiation and APF gel treatment--an in vitro study.

PubMed

Banda, Naveen Reddy; Vanaja Reddy, G; Shashikiran, N D

2011-01-01

Laser irradiation and fluoride has been used as a preventive tool to combat dental caries in permanent teeth, but little has been done for primary teeth which are more prone to caries. The purpose of this study was to evaluate microhardness alterations in the primary tooth enamel after Nd-YAG laser irradiation alone and combined with topical fluoride treatment either before or after Nd-YAG laser irradiation. Ten primary molars were sectioned and assigned randomly to: control group, Nd-YAG laser irradiation, Nd-YAG lasing before APF and APF followed by Nd-YAG lasing. The groups were evaluated for microhardness. Surface morphological changes were observed using SEM. Statistical comparisons were performed. The control group's SEM showed a relatively smooth enamel surface and lasing group had fine cracks and porosities. In the lasing + fluoride group a homogenous confluent surface was seen. In the fluoride + lasing group an irregular contour with marked crack propagation was noted. There was a significant increase in the microhardness of the treatment groups. Nd-YAG laser irradiation and combined APF treatment of the primary tooth enamel gave morphologically hardened enamel surface which can be a protective barrier against a cariogenic attack.

Inhibiting glutamine uptake represents an attractive new strategy for treating acute myeloid leukemia

PubMed Central

Willems, Lise; Jacque, Nathalie; Jacquel, Arnaud; Neveux, Nathalie; Trovati Maciel, Thiago; Lambert, Mireille; Schmitt, Alain; Poulain, Laury; Green, Alexa S.; Uzunov, Madalina; Kosmider, Olivier; Radford-Weiss, Isabelle; Moura, Ivan Cruz; Auberger, Patrick; Ifrah, Norbert; Bardet, Valérie; Chapuis, Nicolas; Lacombe, Catherine; Mayeux, Patrick; Tamburini, Jérôme

2013-01-01

Cancer cells require nutrients and energy to adapt to increased biosynthetic activity, and protein synthesis inhibition downstream of mammalian target of rapamycin complex 1 (mTORC1) has shown promise as a possible therapy for acute myeloid leukemia (AML). Glutamine contributes to leucine import into cells, which controls the amino acid/Rag/mTORC1 signaling pathway. We show in our current study that glutamine removal inhibits mTORC1 and induces apoptosis in AML cells. The knockdown of the SLC1A5 high-affinity transporter for glutamine induces apoptosis and inhibits tumor formation in a mouse AML xenotransplantation model. l-asparaginase (l-ase) is an anticancer agent also harboring glutaminase activity. We show that l-ases from both Escherichia coli and Erwinia chrysanthemi profoundly inhibit mTORC1 and protein synthesis and that this inhibition correlates with their glutaminase activity levels and produces a strong apoptotic response in primary AML cells. We further show that l-ases upregulate glutamine synthase (GS) expression in leukemic cells and that a GS knockdown enhances l-ase–induced apoptosis in some AML cells. Finally, we observe a strong autophagic process upon l-ase treatment. These results suggest that l-ase anticancer activity and glutamine uptake inhibition are promising new therapeutic strategies for AML. PMID:24014241

Lasing in robust cesium lead halide perovskite nanowires

DOE PAGES

Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; ...

2016-02-09

The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic-inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored andmore » handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry-Pérot lasing occurs in CsPbBr 3 nanowires with an onset of 5 μJ cm -2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 10 9 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication.« less

Polarization characteristics of Whispering-Gallery-Mode fiber lasers based on evanescent-wave-coupled gain.

PubMed

Zhang, Yuan-Xian; Pu, Xiao-Yun; Feng, Li; Han, De-Yu; Ren, Yi-Tao

2013-05-20

The polarization characteristics of Whispering-Gallery-Mode (WGM) fiber lasers based on evanescent-wave-coupled gain are investigated. For the laser gain is excited by side-pumping scheme, it is found that the polarization property of lasing emission is simply dependent on the polarized states of the pump beams. The polarization property of lasing emission depends on the propagating situation of the pump beams in an optical fiber if the laser gain is excited by evanescent-wave pumping scheme, that is, if the pump beams within the fiber are meridional beams, the lasing emission is a transverse electric (TE) wave that forms a special radial polarization emission. However, if the pump beams within the fiber are skew beams, both transverse magnetic (TM) and TE waves exist simultaneously in lasing emission that forms a special axially and radially mixed polarization emission. Pumped by skew beams, the wave-number differences between TE and TM waves are also investigated quantitatively, the results demonstrate that the wave-number difference decreases with the increase of the fiber diameter and the refractive index (RI) of the cladding solution. The observed polarization characteristics have been well explained based on lasing radiation mechanism of WGM fiber laser of gain coupled by evanescent wave.

Pulse propagation and optically controllable switch in coupled semiconductor-double-quantum-dot nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamedi, H. R., E-mail: hamid.r.hamedi@gmail.com, E-mail: hamid.hamedi@tfai.vu.lt

The problem of pulse propagation is theoretically investigated through a coupled semiconductor-double-quantum-dot (SDQD) nanostructure. Solving the coupled Maxwell–Bloch equations for the SDQD and field simultaneously, the dynamic control of pulse propagation through the medium is numerically explored. It is found that when all the control fields are in exact resonance with their corresponding transitions, a weak Gaussian-shaped probe pulse is transmitted through the medium nearly without any significant absorption and losses so that it can preserve its shape for quite a long propagation distance. In contrast, when one of the control fields is not in resonance with its corresponding transition,more » the probe pulse will be absorbed by the QD medium after a short distance. Then we consider the probe pulses with higher intensities. It is realized that an intense probe pulse experiences remarkable absorption and broadening during propagation. Finally, we demonstrate that this SDQD system can be employed as an optically controllable switch for the wave propagation to transit from an absorbing phase to a perfect transparency for the probe field. The required time for such switch is also estimated through realistic values.« less

Electrodynamic properties of a hypercrystal with ferrite and semiconductor layers in an external magnetic field

NASA Astrophysics Data System (ADS)

Fedorin, Illia V.

2018-01-01

Electrodynamic properties of a photonic hypercrystal formed by periodically alternating two types of anisotropic metamaterials are studied. The first metamaterial consists of ferrite and dielectric layers, while the second metamaterial consists of semiconductor and dielectric layers. The system is assumed to be placed in an external magnetic field, which applied parallel to the boundaries of the layers. An effective medium theory which is suitable for calculation of properties of long-wavelength electromagnetic modes is applied in order to derive averaged expressions for effective constitutive parameters. It has been shown that providing a conscious choice of the constitutive parameters and material fractions of magnetic, semiconductor, and dielectric layers, the system under study shows hypercrystal properties for both TE and TM waves in the different frequency ranges.

Preventing Raman Lasing in High-Q WGM Resonators

NASA Technical Reports Server (NTRS)

Savchenkov, Anatoliy; Matsko, Andrey; Strekalov, Dmitry; Maleki, Lute

2007-01-01

A generic design has been conceived to suppress the Raman effect in whispering- gallery-mode (WGM) optical resonators that have high values of the resonance quality factor (Q). Although it is possible to exploit the Raman effect (even striving to maximize the Raman gain to obtain Raman lasing), the present innovation is intended to satisfy a need that arises in applications in which the Raman effect inhibits the realization of the full potential of WGM resonators as frequency-selection components. Heretofore, in such applications, it has been necessary to operate high-Q WGM resonators at unattractively low power levels to prevent Raman lasing. (The Raman-lasing thresholds of WGM optical resonators are very low and are approximately proportional to Q(sup -2)). Heretofore, two ways of preventing Raman lasting at high power levels have been known, but both entail significant disadvantages: A resonator can be designed so that the optical field is spread over a relatively large mode volume to bring the power density below the threshold. For any given combination of Q and power level, there is certain mode volume wherein Raman lasing does not start. Unfortunately, a resonator that has a large mode volume also has a high spectral density, which is undesirable in a typical photonic application. A resonator can be cooled to the temperature of liquid helium, where the Raman spectrum is narrower and, therefore, the Raman gain is lower. However, liquid-helium cooling is inconvenient. The present design overcomes these disadvantages, making it possible to operate a low-spectral-density (even a single-mode) WGM resonator at a relatively high power level at room temperature, without risk of Raman lasing.

Effect of antibiotic, Lacto-lase and probiotic addition in chicken feed on protein and fat content of chicken meat

NASA Astrophysics Data System (ADS)

Azhar, Noor Amiza; Abdullah, Aminah

2015-09-01

This research was conducted to investigate the effect of chicken feed additives (antibiotic, Lacto-lase® and probiotic) on protein and fat content of chicken meat. Chicken fed with control diet (corn-soy based diet) served as a control. The treated diets were added with zinc bacitracin (antibiotic), different amount of Lacto-lase® (a mixture of probiotic and enzyme) and probiotic. Chicken were slaughtered at the age of 43-48 days. Each chicken was divided into thigh, breast, drumstick, drumette and wing. Protein content in chicken meat was determined by using macro-Kjeldahl method meanwhile Soxhlet method was used to analyse fat content. The result of the study showed that the protein content of chicken breast was significantly higher (p≤0.05) while thigh had the lowest protein content (p≤0.05). Antibiotic fed chicken was found to have the highest protein content among the treated chickens but there was no significant different with 2g/kg Lacto-lase® fed chicken (p>0.05). All thighs were significantly higher (p≤0.05) in fat content except for drumette of control chicken while breast contained the lowest fat content compared to other chicken parts studied. The control chicken meat contained significantly higher (p≤0.05) amount of fat compared to the other treated chickens. Chicken fed with 2g/kg Lacto-lase® had the lowest (p≤0.05) fat content. The result of this study indicated that the addition of Lacto-lase® as a replacement of antibiotic in chicken feed will not affect the content of protein and fat of chicken meat.

Table-top two-color soft X-ray laser by means of Ni-like plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masoudnia, Leili; Ruiz-Lopez, Mabel; Bleiner, Davide, E-mail: davide.bleiner@empa.ch

2016-04-15

Laser-produced Ni-like plasmas are known as active media for extreme ultraviolet lasing, with the flexibility to two-color lasing. Two-color laser generation is very complex at accelerator facilities. In this work, plasma lasing at the 3d{sup 9}4d{sup 1}(J = 0) → 3d{sup 9}4p{sup 1}(J = 1) (collisional-pumping process) and the 3d{sup 9}4f{sup 1}(J = 1) → 3d{sup 9}4d{sup 1}(J = 1) (photo-pumping process) transitions is studied experimentally and computationally. Several key characteristics of collisional- and photo-pumping laser, such as divergence, pointing stability, and intensity have been investigated. The measurements showed different pulse characteristics for the two lasing processes affected by plasma inhomogeneity in temperature and density. Analytical expressions of these characteristicsmore » for both collisional- and photo-pumping are derived. It is found that the plasma that maximizes the photo-pumping lasing is 20% hotter and 70% denser than the plasma that optimizes the collisional-pumping lasing. The gain of collisional pumping is ≈4 times higher than the gain for the photo-pumping. The gain lifetime is a factor of ≈5.2 larger for the monopole-pumping. Similarly, the gain thickness is a factor of ≈1.8 larger. It is also found that the gain build-up time for collisional- and photo-pumping is 0.7 ps and 0.9 ps, respectively, whereas the build-up length-scale is 11.5 μm and 6.3 μm, respectively.« less

Effectiveness of silica-lasing method on the bond strength of composite resin repair to Ni-Cr alloy.

PubMed

Madani, Azam S; Astaneh, Pedram Ansari; Nakhaei, Mohammadreza; Bagheri, Hossein G; Moosavi, Horieh; Alavi, Samin; Najjaran, Niloufar Tayarani

2015-04-01

The aim of this study was to evaluate the effectiveness of silica-lasing method for improving the composite resin repair of metal ceramic restorations. Sixty Ni-Cr cylindrical specimens were fabricated. The bonding surface of all specimens was airborne-particle abraded using 50 μm aluminum oxide particles. Specimens were divided into six groups that received the following surface treatments: group 1-airborne-particle abrasion alone (AA); group 2-Nd:YAG laser irradiation (LA); group 3-silica coating (Si-CO); group 4-silica-lasing (metal surface was coated with slurry of opaque porcelain and irradiated by Nd:YAG laser) (Si-LA); group 5-silica-lasing plus etching with HF acid (Si-LA-HF); group 6-CoJet sand lased (CJ-LA). Composite resin was applied on metal surfaces. Specimens were thermocycled and tested in shear mode in a universal testing machine. The shear bond strength values were analyzed using ANOVA and Tukey's tests (α = 0.05). The mode of failure was determined, and two specimens in each group were examined by scanning electron microscopy and wavelength dispersive X-ray spectroscopy. Si-CO showed significantly higher shear bond strength in comparison to other groups (p < 0.001). The shear bond strength values of the LA group were significantly higher than those of the AA group (p < 0.05). No significant difference was found among lased groups (LA, Si-LA, Si-LA-HF, CJ-LA; p > 0.05). The failure mode was 100% adhesive for AA, Si-LA, Si-LA-HF, and CJ-LA. LA and Si-CO groups showed 37.5% and 87.5% cohesive failure, respectively. Silica coating of Ni-Cr alloy resulted in higher shear bond strength than those of other surface treatments. © 2014 by the American College of Prosthodontists.

Ho3+-doped AlF3-TeO2-based glass fibers for 2.1 µm laser applications

NASA Astrophysics Data System (ADS)

Wang, S. B.; Jia, Z. X.; Yao, C. F.; Ohishi, Y.; Qin, G. S.; Qin, W. P.

2017-05-01

Ho3+-doped AlF3-TeO2-based glass fibers based on AlF3-BaF2-CaF2-YF3-SrF2-MgF2-TeO2 glasses are fabricated by using a rod-in-tube method. The glass rod including a core and a thick cladding layer is prepared by using a suction method, where the thick cladding layer is used to protect the core from the effect of surface crystallization during the fiber drawing. By inserting the glass rod into a glass tube, the glass fibers with relatively low loss (~2.3 dB m-1 @ 1560 nm) are prepared. By using a 38 cm long Ho3+-doped AlF3-TeO2-based glass fiber as the gain medium and a 1965 nm fiber laser as the pump source, 2065 nm lasing is obtained for a threshold pump power of ~220 mW. With further increasing the pump power to ~325 mW, the unsaturated output power of the 2065 nm laser is about 82 mW and the corresponding slope efficiency is up to 68.8%. The effects of the gain fiber length on the lasing threshold, the slope efficiency, and the operating wavelength are also investigated. Our experimental results show that Ho3+-doped AlF3-TeO2-based glass fibers are promising gain media for 2.1 µm laser applications.

Ambipolar light-emitting organic single-crystal transistors with a grating resonator

PubMed Central

Maruyama, Kenichi; Sawabe, Kosuke; Sakanoue, Tomo; Li, Jinpeng; Takahashi, Wataru; Hotta, Shu; Iwasa, Yoshihiro; Takenobu, Taishi

2015-01-01

Electrically driven organic lasers are among the best lasing devices due to their rich variety of emission colors as well as other advantages, including printability, flexibility, and stretchability. However, electrically driven lasing in organic materials has not yet been demonstrated because of serious luminescent efficiency roll-off under high current density. Recently, we found that the organic ambipolar single-crystal transistor is an excellent candidate for lasing devices because it exhibits less efficient roll-off, high current density, and high luminescent efficiency. Although a single-mode resonator combined with light-emitting transistors (LETs) is necessary for electrically driven lasing devices, the fragility of organic crystals has strictly limited the fabrication of resonators, and LETs with optical cavities have never been fabricated until now. To achieve this goal, we improved the soft ultraviolet-nanoimprint lithography method and demonstrated electroluminescence from a single-crystal LET with a grating resonator, which is a crucial milestone for future organic lasers. PMID:25959455

Controllable lasing performance in solution-processed organic-inorganic hybrid perovskites.

PubMed

Kao, Tsung Sheng; Chou, Yu-Hsun; Hong, Kuo-Bin; Huang, Jiong-Fu; Chou, Chun-Hsien; Kuo, Hao-Chung; Chen, Fang-Chung; Lu, Tien-Chang

2016-11-03

Solution-processed organic-inorganic perovskites are fascinating due to their remarkable photo-conversion efficiency and great potential in the cost-effective, versatile and large-scale manufacturing of optoelectronic devices. In this paper, we demonstrate that the perovskite nanocrystal sizes can be simply controlled by manipulating the precursor solution concentrations in a two-step sequential deposition process, thus achieving the feasible tunability of excitonic properties and lasing performance in hybrid metal-halide perovskites. The lasing threshold is at around 230 μJ cm -2 in this solution-processed organic-inorganic lead-halide material, which is comparable to the colloidal quantum dot lasers. The efficient stimulated emission originates from the multiple random scattering provided by the micro-meter scale rugged morphology and polycrystalline grain boundaries. Thus the excitonic properties in perovskites exhibit high correlation with the formed morphology of the perovskite nanocrystals. Compared to the conventional lasers normally serving as a coherent light source, the perovskite random lasers are promising in making low-cost thin-film lasing devices for flexible and speckle-free imaging applications.

Profiling of Atmospheric Water Vapor with MIR and LASE

NASA Technical Reports Server (NTRS)

Wang, J. R.; Racette, P.; Triesly, M. E.; Browell, E. V.; Ismail, S.; Chang, L. A.; Hildebrand, Peter H. (Technical Monitor)

2001-01-01

This paper presents the first and the only simultaneous measurements of water vapor by MIR (Millimeter-wave Imaging Radiometer) and LASE (Lidar Atmospheric Sounding Experiment) on board the same ER-2 aircraft. Water vapor is one of the most important constituents in the Earth's atmosphere, as its spatial and temporal variations affect a wide spectrum of meteorological phenomena ranging from the formation of clouds to the development of severe storms. Its concentration, as measured in terms of relative humidity, determines the extinction coefficient of atmospheric aerosol particles and therefore visibility. These considerations point to the need for effective and frequent measurements of the atmospheric water vapor. The MIR and LASE instruments provide measurements of water vapor profiles with two markedly different techniques. LASE can give water vapor profiles with excellent vertical resolution under clear condition, while MIR can retrieve water vapor profiles with a crude vertical resolution even under a moderate cloud cover. Additionally, millimeter-wave measurements are relatively simple and provide better spatial coverage.

Simplified Modeling of Steady-State and Transient Brillouin Gain in Magnetoactive Non-Centrosymmetric Semiconductors

NASA Astrophysics Data System (ADS)

Singh, M.; Aghamkar, P.; Sen, P. K.

With the aid of a hydrodynamic model of semiconductor-plasmas, a detailed analytical investigation is made to study both the steady-state and the transient Brillouin gain in magnetized non-centrosymmetric III-V semiconductors arising from the nonlinear interaction of an intense pump beam with the internally-generated acoustic wave, due to piezoelectric and electrostrictive properties of the crystal. Using the fact that the origin of coherent Brillouin scattering (CBS) lies in the third-order (Brillouin) susceptibility of the medium, we obtained an expression of the gain coefficient of backward Stokes mode in steady-state and transient regimes and studied the dependence of piezoelectricity, magnetic field and pump pulse duration on its growth rate. The threshold-pump intensity and optimum pulse duration for the onset of transient CBS are estimated. The piezoelectricity and externally-applied magnetic field substantially enhances the transient CBS gain coefficient in III-V semiconductors which can be of great use in the compression of scattered pulses.

Mirrorless lasing from light emitters in percolating clusters

NASA Astrophysics Data System (ADS)

Burlak, Gennadiy; Rubo, Y. G.

2015-07-01

We describe the lasing effect in the three-dimensional percolation system, where the percolating cluster is filled by active media composed by light emitters excited noncoherently. We show that, due to the presence of a topologically nontrivial photonic structure, the stimulated emission is modified with respect to both conventional and random lasers. The time dynamics and spectra of the lasing output are studied numerically with finite-difference time-domain approach. The Fermat principle and Monte Carlo approach are applied to characterize the optimal optical path and interconnection between the radiating emitters. The spatial structure of the laser mode is found by a long-time FDTD simulation.

Bibliography of Soviet Laser Developments, Number 62, November-December 1982.

DTIC Science & Technology

1983-10-30

A V ill UBOV V S 26 VODOVATOV I A 76 TITOV YE A 34,96 USOVA N A 1 VOZOT B 16 TRAL’ V A 113 USTINOY N D 12,59 VOLCHENOK V 1 17 TODUA...of single pulse lasing. ZhPS, v . 37, no. 5, 1982, 741-748. 3. Zaskal’ko, O.P., and l.G. Rudoy (1). Giant pulse lasing without a resonator. ZhETF P, v ...2534. b. Er 3+ 8. Kaminskiy, A.A. (13).- Staged lasing from Er3 ions in YAlO 3crytal a4 4 1 IV 4 4a 3/2--:--3/2 ’~ A +111/2-1-

Electro-pumped whispering gallery mode ZnO microlaser array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, G. Y.; State Key Laboratory of Bioelectronics, School of Electronic Science and Engineering, Southeast University, Nanjing 210096; Li, J. T.

2015-01-12

By employing vapor-phase transport method, ZnO microrods are fabricated and directly assembled on p-GaN substrate to form a heterostructural microlaser array, which avoids of the relatively complicated etching process comparing previous work. Under applied forward bias, whispering gallery mode ZnO ultraviolet lasing is obtained from the as-fabricated heterostructural microlaser array. The device's electroluminescence originates from three distinct electron-hole recombination processes in the heterojunction interface, and whispering gallery mode ultraviolet lasing is obtained when the applied voltage is beyond the lasing threshold. This work may present a significant step towards future fabrication of a facile technique for micro/nanolasers.

Study of nonlinear liquid effects into ytterbium-doped fiber laser for multi-wavelength generation

NASA Astrophysics Data System (ADS)

Lozano-Hernandez, T.; Jauregui-Vazquez, D.; Estudillo-Ayala, J.; Herrera-Piad, L. A.; Rojas-Laguna, R.; Hernandez-Garcia, J. M.; Sierra-Hernandez, J. M.

2018-02-01

We present an experimental study of liquid refractive index effects into Ytterbium ring fiber laser cavity configuration. The laser is operated using a bi-tapered optical fiber immersed in water-alcohol concentrations. When the tapered fiber is dipped into a distilled water, a single lasing line with a peak power centered at 1025 nm is achieved. Afterward, by changing the polarization state into the cavity the lasing line can be switched. Moreover, by modifying the refractive index liquid surrounding media the lasing lines can be controlled and special liquid provide nonlinear response. The laser offers compactness, low effective cost and good stability.

Enhanced sensitivity of a passive optical cavity by an intracavity dispersive medium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, David D.; Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899; Myneni, Krishna

2009-07-15

The pushing of the modes of a Fabry-Perot cavity by an intracavity rubidium cell is measured. The scale factor of the modes is increased by the anomalous dispersion and is inversely proportional to the sum of the effective group index and an additional cavity delay factor that arises from the variation of the Rb absorption over a free spectral range. This additional positive feedback further increases the effect of the anomalous dispersion and goes to zero at the lasing threshold. The mode width does not grow as fast as the scale factor as the intracavity absorption is increased resulting inmore » enhanced measurement sensitivities. For absorptions larger than the scale factor pole, the atom-cavity response is multivalued and mode splitting occurs.« less

Switchable multiwavelength erbium-doped photonic crystal fiber ring laser based on a length of polarization-maintaining photonic crystal fiber

NASA Astrophysics Data System (ADS)

Cheng, Jianqun; Ruan, Shuangchen

2011-11-01

A switchable multi-wavelength Erbium-doped photonic crystal fiber (ED-PCF) ring laser based on a length of polarization-maintaining photonic crystal fiber(PM-PCF) is presented and demonstrated experimentally. A segment of ED-PCF is used as linear gain medium in the resonant cavity. Due to the polarization hole burning (PHB) caused by the PM-PCF and a polarization controller (PC), the laser can operate in stable dual- or triple- wavelength modes at room temperature. The optical signal-to-noise ratio (OSNR) of the laser without any wavelength-selective components is greater than 30 dB. The amplitude variations of lasing peaks in ten minutes are less than 0.26dB for two different operating modes.

Switchable multiwavelength erbium-doped photonic crystal fiber ring laser based on a length of polarization-maintaining photonic crystal fiber

NASA Astrophysics Data System (ADS)

Cheng, Jianqun; Ruan, Shuangchen

2012-03-01

A switchable multi-wavelength Erbium-doped photonic crystal fiber (ED-PCF) ring laser based on a length of polarization-maintaining photonic crystal fiber(PM-PCF) is presented and demonstrated experimentally. A segment of ED-PCF is used as linear gain medium in the resonant cavity. Due to the polarization hole burning (PHB) caused by the PM-PCF and a polarization controller (PC), the laser can operate in stable dual- or triple- wavelength modes at room temperature. The optical signal-to-noise ratio (OSNR) of the laser without any wavelength-selective components is greater than 30 dB. The amplitude variations of lasing peaks in ten minutes are less than 0.26dB for two different operating modes.

212-Angstrom neonlike zinc laser of LULI

NASA Astrophysics Data System (ADS)

Jamelot, Gerard; Jaegle, Pierre; Rus, Bedrich; Carillon, Antoine; Klisnick, Annie; Nantel, Marc; Sebban, Stephane; Albert, F.; Zeitoun, Philippe; Plankl, E.; Sirgand, A.; Lewis, Ciaran L. S.; MacPhee, Andrew G.; Tallents, Gregory J.; Krishnan, J.; Holden, M.

1995-09-01

The main feature of x-ray laser research at LULI is the development of a saturated laser at 212 angstrom with a relatively small pump laser of 0.4 kJ in 600 ps. The laser works with the 3p- 3s J equals O yields 1 transition of neon-like zinc, by using the double-pass of amplified radiation in the active medium. Plasma parameters (temperature, density, homogeneity), and x-ray laser emission properties (intensity, pointing angle, divergence, and coherence) have been studied. Lasing action needs the main laser pulse to be preceded by a ten-prepulse train (contrast ratio less than 103) due to the remnant oscillator. The effect of a single prepulse was investigated as a function of contrast ratio and delay between the prepulse and the main pulse.

A space-based combined thermophotovoltaic electric generator and gas laser solar energy conversion system

NASA Technical Reports Server (NTRS)

Yesil, Oktay

1989-01-01

This paper describes a spaceborne energy conversion system consisting of a thermophotovoltaic electric generator and a gas laser. As a power source for the converson, the system utilizes an intermediate blackbody cavity heated to a temperature of 2000-2400 K by concentrated solar radiation. A double-layer solar cell of GaAs and Si forms a cylindrical surface concentric to this blackbody cavity, receiving the blackbody radiation and converting it into electricity with cell conversion efficiency of 50 percent or more. If the blackbody cavity encloses a laser medium, the blackbody radiation can also be used to simultaneously pump a lasing gas. The feasibility of blackbody optical pumping at 4.3 microns in a CO2-He gas mixture was experimentally demonstrated.

Optofluidic lasers with a single molecular layer of gain

PubMed Central

Chen, Qiushu; Ritt, Michael; Sivaramakrishnan, Sivaraj; Sun, Yuze; Fan, Xudong

2014-01-01

We achieve optofluidic lasers with a single molecular layer of gain, in which green fluorescent protein, dye-labeled bovine serum albumin, and dye-labeled DNA are respectively used as the gain medium and attached to the surface of a ring resonator via surface immobilization biochemical methods. It is estimated that the surface density of the gain molecules is on the order of 1012/cm2, sufficient for lasing under pulsed optical excitation. It is further shown that the optofluidic laser can be tuned by energy transfer mechanisms through biomolecular interactions. This work not only opens a door to novel photonic devices that can be controlled at the level of a single molecular layer, but also provides a promising sensing platform to analyze biochemical processes at the solid-liquid interface. PMID:25312306

A possible upgrade of FLASH for harmonic lasing down to 1.3 nm

NASA Astrophysics Data System (ADS)

Schneidmiller, E. A.; Yurkov, M. V.

2013-07-01

We propose the 3rd harmonic lasing in a new FLASH undulator as a way to produce intense, narrow-band, and stable SASE radiation down to 1.3 nm with the present accelerator energy of 1.25 GeV. To provide optimal conditions for harmonic lasing, we suggest to suppress the fundamental with the help of a special set of phase shifters. We rely on the standard technology of gap-tunable planar hybrid undulators, and choose the period of 2.3 cm and the minimum gap of 0.9 cm; total length of the undulator system is 34.5 m. With the help of numerical simulations we demonstrate that the 3rd harmonic lasing at 1.3 nm provides peak power at a gigawatt level and the narrow intrinsic bandwidth, 0.1% (FWHM). Pulse duration can be controlled in the range of a few tens of femtoseconds, and the peak brilliance reaches the value of 1031 photons/(s mrad2 mm2 0.1% BW). With the given undulator design, a standard option of lasing at the fundamental wavelength to saturation is possible through the entire water window and at longer wavelengths. In this paper we briefly consider additional options such as polarization control, bandwidth reduction, self-seeding, X-ray pulse compression, and two-color operation. We also discuss possible technical issues and backup solutions.

Temperature changes across porcelain during multiple exposure CO2 lasing

NASA Astrophysics Data System (ADS)

Barron, Joseph R.; Zakariasen, Kenneth L.; Peacocke, Larry

1990-06-01

Research indicates that laser energy may provide a useful method for glazing and fusing porcelain for intraoral prosthetic purposes. However, it is not known whether such lasing will result in the production of heat levels that may be damaging to adjacent vital tissues such as the dental pulp and periodontal tissues. This research is designed to measure the magnitude of temperature rise across porcelain observed during multiple exposure C02 lasing. Fifteen porcelain examples of 1000 jim (5), 1500 pm (5) and 2000 tm (5) x each received five C02 laser exposures on the same exposure site at 1.0 sec. intervals at 8.0 watts (0.2 sec. per exposure with a 1 mm focal spot). A YSI 144201 thermilinear precision thermistor was placed on the porcelain surface opposite each laser exposure site. Temperature rise above ambient was recorded by an HP3421A data acquisition unit and HP9816 technical microcomputer. Recording continued for sufficient time to allow temperatures to return to ambient. The mean temperature elevations ranged from a low of 2.97 0C (2000 pm) to a high of 7.77 °C (1000 μm). ANOVA and Duncan's Multiple Range Test indicated significant differences in temperature rise by porcelain thickness. It would appear from the results of this research that temperature elevations adjacent to lased porcelain may be sufficiently controllable that safe intraoral porcelain lasing will be possible.

Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

DOEpatents

LeToquin, Ronan P; Tong, Tao; Glass, Robert C

2014-12-30

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

Spectroscopic Chemical Analysis Methods and Apparatus

NASA Technical Reports Server (NTRS)

Hug, William F.; Reid, Ray D.

2012-01-01

This invention relates to non-contact spectroscopic methods and apparatus for performing chemical analysis and the ideal wavelengths and sources needed for this analysis. It employs deep ultraviolet (200- to 300-nm spectral range) electron-beam-pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor lightemitting devices, and hollow cathode metal ion lasers. Three achieved goals for this innovation are to reduce the size (under 20 L), reduce the weight [under 100 lb (.45 kg)], and reduce the power consumption (under 100 W). This method can be used in microscope or macroscope to provide measurement of Raman and/or native fluorescence emission spectra either by point-by-point measurement, or by global imaging of emissions within specific ultraviolet spectral bands. In other embodiments, the method can be used in analytical instruments such as capillary electrophoresis, capillary electro-chromatography, high-performance liquid chromatography, flow cytometry, and related instruments for detection and identification of unknown analytes using a combination of native fluorescence and/or Raman spectroscopic methods. This design provides an electron-beampumped semiconductor radiation-producing method, or source, that can emit at a wavelength (or wavelengths) below 300 nm, e.g. in the deep ultraviolet between about 200 and 300 nm, and more preferably less than 260 nm. In some variations, the method is to produce incoherent radiation, while in other implementations it produces laser radiation. In some variations, this object is achieved by using an AlGaN emission medium, while in other implementations a diamond emission medium may be used. This instrument irradiates a sample with deep UV radiation, and then uses an improved filter for separating wavelengths to be detected. This provides a multi-stage analysis of the sample. To avoid the difficulties related to producing deep UV semiconductor sources, a pumping approach has been developed that uses ballistic electron beam injection directly into the active region of a wide bandgap semiconductor material.

1.3-microm optically-pumped semiconductor disk laser by wafer fusion.

PubMed

Lyytikäinen, Jari; Rautiainen, Jussi; Toikkanen, Lauri; Sirbu, Alexei; Mereuta, Alexandru; Caliman, Andrei; Kapon, Eli; Okhotnikov, Oleg G

2009-05-25

We report a wafer-fused high power optically-pumped semiconductor disk laser operating at 1.3 microm. An InP-based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector, resulting in an integrated monolithic gain mirror. Over 2.7 W of output power, obtained at temperature of 15 degrees C, represents the best achievement reported to date for this type of lasers. The results reveal an essential advantage of the wafer fusing technique over both monolithically grown AlGaInAs/GaInAsP- and GaInNAs-based structures.

Two-dimensional imaging of sprays with fluorescence, lasing, and stimulated Raman scattering.

PubMed

Serpengüzel, A; Swindal, J C; Chang, R K; Acker, W P

1992-06-20

Two-dimensional fluorescence, lasing, and stimulated Raman scattering images of a hollow-cone nozzle spray are observed. The various constituents of the spray, such as vapor, liquid ligaments, small droplets, and large droplets, are distinguished by selectively imaging different colors associated with the inelastic light-scattering processes.

Vertically Emitting Indium Phosphide Nanowire Lasers.

PubMed

Xu, Wei-Zong; Ren, Fang-Fang; Jevtics, Dimitars; Hurtado, Antonio; Li, Li; Gao, Qian; Ye, Jiandong; Wang, Fan; Guilhabert, Benoit; Fu, Lan; Lu, Hai; Zhang, Rong; Tan, Hark Hoe; Dawson, Martin D; Jagadish, Chennupati

2018-06-13

Semiconductor nanowire (NW) lasers have attracted considerable research effort given their excellent promise for nanoscale photonic sources. However, NW lasers currently exhibit poor directionality and high threshold gain, issues critically limiting their prospects for on-chip light sources with extremely reduced footprint and efficient power consumption. Here, we propose a new design and experimentally demonstrate a vertically emitting indium phosphide (InP) NW laser structure showing high emission directionality and reduced energy requirements for operation. The structure of the laser combines an InP NW integrated in a cat's eye (CE) antenna. Thanks to the antenna guidance with broken asymmetry, strong focusing ability, and high Q-factor, the designed InP CE-NW lasers exhibit a higher degree of polarization, narrower emission angle, enhanced internal quantum efficiency, and reduced lasing threshold. Hence, this NW laser-antenna system provides a very promising approach toward the achievement of high-performance nanoscale lasers, with excellent prospects for use as highly localized light sources in present and future integrated nanophotonics systems for applications in advanced sensing, high-resolution imaging, and quantum communications.

Excitation mechanisms of Er optical centers in GaN epilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

George, D. K.; Hawkins, M. D.; McLaren, M.

2015-10-26

We report direct evidence of two mechanisms responsible for the excitation of optically active Er{sup 3+} ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, lead to narrow emission lines from isolated and the defect-related Er optical centers. However, these centers have different photoluminescence spectra, local defect environments, decay dynamics, and excitation cross sections. The photoluminescence at 1.54 μm from the isolated Er optical center which can be excited by either mechanism has the same decay dynamics, but possesses a much highermore » excitation cross-section under band-to-band excitation. In contrast, the photoluminescence at 1.54 μm from the defect-related Er optical center can only be observed through band-to-band excitation but has the largest excitation cross-section. These results explain the difficulty in achieving gain in Er doped GaN and indicate approaches for realization of optical amplification, and possibly lasing, at room temperature.« less

Mid-infrared passively switched pulsed dual wavelength Ho3+-doped fluoride fiber laser at 3 μm and 2 μm

PubMed Central

Li, Jianfeng; Luo, Hongyu; Wang, Lele; Liu, Yong; Yan, Zhijun; Zhou, Kaiming; Zhang, Lin; Turistsyn, Sergei K.

2015-01-01

Cascade transitions of rare earth ions involved in infrared host fiber provide the potential to generate dual or multiple wavelength lasing at mid-infrared region. In addition, the fast development of saturable absorber (SA) towards the long wavelengths motivates the realization of passively switched mid-infrared pulsed lasers. In this work, by combing the above two techniques, a new phenomenon of passively Q-switched ~3 μm and gain-switched ~2 μm pulses in a shared cavity was demonstrated with a Ho3+-doped fluoride fiber and a specifically designed semiconductor saturable absorber (SESAM) as the SA. The repetition rate of ~2 μm pulses can be tuned between half and same as that of ~3 μm pulses by changing the pump power. The proposed method here will add new capabilities and more flexibility for generating mid-infrared multiple wavelength pulses simultaneously that has important potential applications for laser surgery, material processing, laser radar, and free-space communications, and other areas. PMID:26041105