Use of a reflective semiconductor optical amplifier and dual-ring architecture design to produce a stable multi-wavelength fiber laser

NASA Astrophysics Data System (ADS)

Yeh, Chien-Hung; Chow, Chi-Wai; Lu, Shao-Sheng

2014-05-01

In this work, we propose and demonstrate a multi-wavelength laser source produced by utilizing a C-band reflective semiconductor optical amplifier (RSOA) with a dual-ring fiber cavity. Here, the laser cavity consists of an RSOA, a 1 × 2 optical coupler, a 2 × 2 optical coupler and a polarization controller. As a result, thirteen to eighteen wavelengths around the L band could be generated simultaneously when the bias current of the C-band RSOA was driven at 30-70 mA. In addition, the output stabilities of the power and wavelength are also discussed.

Investigation of 16 × 10 Gbps DWDM System Based on Optimized Semiconductor Optical Amplifier

NASA Astrophysics Data System (ADS)

Rani, Aruna; Dewra, Sanjeev

2017-08-01

This paper investigates the performance of an optical system based on optimized semiconductor optical amplifier (SOA) at 160 Gbps with 0.8 nm channel spacing. Transmission distances up to 280 km at -30 dBm input signal power and up to 247 km at -32 dBm input signal power with acceptable bit error rate (BER) and Q-factor are examined. It is also analyzed that the transmission distance up to 292 km has been covered at -28 dBm input signal power using Dispersion Shifted (DS)-Normal fiber without any power compensation methods.

Enhanced 10 Gb/s operations of directly modulated reflective semiconductor optical amplifiers without electronic equalization.

PubMed

Presi, M; Chiuchiarelli, A; Corsini, R; Choudury, P; Bottoni, F; Giorgi, L; Ciaramella, E

2012-12-10

We report enhanced 10 Gb/s operation of directly modulated bandwidth-limited reflective semiconductor optical amplifiers. By using a single suitable arrayed waveguide grating we achieve simultaneously WDM demultiplexing and optical equalization. Compared to previous approaches, the proposed system results significantly more tolerant to seeding wavelength drifts. This removes the need for wavelength lockers, additional electronic equalization or complex digital signal processing. Uniform C-band operations are obtained experimentally with < 2 dB power penalty within a wavelength drift of 10 GHz (which doubles the ITU-T standard recommendations).

Gain-clamped semiconductor optical amplifiers based on compensating light: Theoretical model and performance analysis

NASA Astrophysics Data System (ADS)

Jia, Xin-Hong; Wu, Zheng-Mao; Xia, Guang-Qiong

2006-12-01

It is well known that the gain-clamped semiconductor optical amplifier (GC-SOA) based on lasing effect is subject to transmission rate restriction because of relaxation oscillation. The GC-SOA based on compensating effect between signal light and amplified spontaneous emission by combined SOA and fiber Bragg grating (FBG) can be used to overcome this problem. In this paper, the theoretical model on GC-SOA based on compensating light has been constructed. The numerical simulations demonstrate that good gain and noise figure characteristics can be realized by selecting reasonably the FBG insertion position, the peak reflectivity of FBG and the biasing current of GC-SOA.

Simulation of all-optical logic NOR gate based on two-photon absorption with semiconductor optical amplifier-assisted Mach-Zehnder interferometer with the effect of amplified spontaneous emission

NASA Astrophysics Data System (ADS)

Kotb, Amer

2015-05-01

The performance of an all-optical NOR gate is numerically simulated and investigated. The NOR Boolean function is realized by using a semiconductor optical amplifier (SOA) incorporated in Mach-Zehnder interferometer (MZI) arms and exploiting the nonlinear effect of two-photon absorption (TPA). If the input pulse intensities is adjusting to be high enough, the TPA-induced phase change can be larger than the regular gain-induced phase change and hence support ultrafast operation in the dual rail switching mode. The numerical study is carried out by taking into account the effect of the amplified spontaneous emission (ASE). The dependence of the output quality factor ( Q-factor) on critical data signals and SOAs parameters is examined and assessed. The obtained results confirm that the NOR gate implemented with the proposed scheme is capable of operating at a data rate of 250 Gb/s with logical correctness and high output Q-factor.

Noise and noise figure of vertical-cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode

NASA Astrophysics Data System (ADS)

Wen, Pengyue; Sanchez, Michael; Gross, Matthias; Esener, Sadik C.

2003-05-01

In this paper, the noise properties of vertical cavity semiconductor optical amplifiers (VCSOAs) operated in reflection mode are studied. Expressions for noise sources contributing to the total noise detected at amplifier output are derived, based on the photon statistics master equations. The noise figure, defined as the degradation of signal-to-noise ratio (SNR), is analyzed using the assumption that spontaneous emission-signal beat noise dominates. The analysis shows that the noise figure of reflection mode VCSOAs has the same values as that in transmission mode as long as amplifier gain is high (G>>1). Furthermore, simulations depict the dependence of noise figure on device parameters and bias conditions, as well as reveal the importance of the low reflectivity front mirror and the high reflectivity rear mirror for low noise operation. In addition, the noise figure analysis results are compared with experimental measurements, in which amplified spontaneous emission (ASE) power is measured by an optical spectrum analyzer and the noise figure is obtained from the ASE power and the amplifier gain. The measured data are in good agreement with the theoretical predictions.

Testing methodologies and systems for semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Wieckowski, Michael

Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable of ascertaining SOA performance based solely on the subthreshold differential resistance signature, and are a first step toward the inevitable integration of self-testing circuits into complex optoelectronic systems.

All-optical clocked flip-flops and random access memory cells using the nonlinear polarization rotation effect of low-polarization-dependent semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Wang, Yongjun; Liu, Xinyu; Tian, Qinghua; Wang, Lina; Xin, Xiangjun

2018-03-01

Basic configurations of various all-optical clocked flip-flops (FFs) and optical random access memory (RAM) based on the nonlinear polarization rotation (NPR) effect of low-polarization-dependent semiconductor optical amplifiers (SOA) are proposed. As the constituent elements, all-optical logic gates and all-optical SR latches are constructed by taking advantage of the SOA's NPR switch. Different all-optical FFs (AOFFs), including SR-, D-, T-, and JK-types as well as an optical RAM cell were obtained by the combination of the proposed all-optical SR latches and logic gates. The effectiveness of the proposed schemes were verified by simulation results and demonstrated by a D-FF and 1-bit RAM cell experimental system. The proposed all-optical clocked FFs and RAM cell are significant to all-optical signal processing.

Figures of merit for microwave photonic phase shifters based on semiconductor optical amplifiers.

PubMed

Sancho, Juan; Lloret, Juan; Gasulla, Ivana; Sales, Salvador; Capmany, José

2012-05-07

We theoretically and experimentally compare the performance of two fully tunable phase shifter structures based on semiconductor optical amplifiers (SOA) by means of several figures of merit common to microwave photonic systems. A single SOA stage followed by a tailored notch filter is compared with a cascaded implementation comprising three SOA-based phase shifter stages. Attention is focused on the assessment of the RF net gain, noise figure and nonlinear distortion. Recommendations on the performance optimization of this sort of approaches are detailed.

All-optical 1st- and 2nd-order differential equation solvers with large tuning ranges using Fabry-Pérot semiconductor optical amplifiers.

PubMed

Chen, Kaisheng; Hou, Jie; Huang, Zhuyang; Cao, Tong; Zhang, Jihua; Yu, Yuan; Zhang, Xinliang

2015-02-09

We experimentally demonstrate an all-optical temporal computation scheme for solving 1st- and 2nd-order linear ordinary differential equations (ODEs) with tunable constant coefficients by using Fabry-Pérot semiconductor optical amplifiers (FP-SOAs). By changing the injection currents of FP-SOAs, the constant coefficients of the differential equations are practically tuned. A quite large constant coefficient tunable range from 0.0026/ps to 0.085/ps is achieved for the 1st-order differential equation. Moreover, the constant coefficient p of the 2nd-order ODE solver can be continuously tuned from 0.0216/ps to 0.158/ps, correspondingly with the constant coefficient q varying from 0.0000494/ps(2) to 0.006205/ps(2). Additionally, a theoretical model that combining the carrier density rate equation of the semiconductor optical amplifier (SOA) with the transfer function of the Fabry-Pérot (FP) cavity is exploited to analyze the solving processes. For both 1st- and 2nd-order solvers, excellent agreements between the numerical simulations and the experimental results are obtained. The FP-SOAs based all-optical differential-equation solvers can be easily integrated with other optical components based on InP/InGaAsP materials, such as laser, modulator, photodetector and waveguide, which can motivate the realization of the complicated optical computing on a single integrated chip.

Assessment of commercial optical amplifiers for potential use in space applications

NASA Astrophysics Data System (ADS)

Barbero, Juan; Sotom, Michel; Benazet, Benoit; Esquivias, Ignacio; López Hernández, Francisco José

2017-11-01

This paper describes the activities and results of an ESA-funded project concerned with the assessment of optical amplifier technologies and products for applications in fiber optic subsystems of future satellite payloads. On-board applications are briefly introduced, together with associated system-level requirements. Optical amplifier technologies, research achievements and products are reviewed. They are compared in terms of current performance, perspectives and suitability for the target space applications. Optical fibre amplifiers, not limited to Erbium-doped amplifiers, Erbium-doped waveguide amplifiers and Semiconductor Optical Amplifiers are covered. The review includes analysis and trade-off of all performance parameters including saturation output power, noise figure, polarisation maintaining capability, wall-plug efficiency, and mass and size. A selection of optical amplifier products for further evaluation and testing is presented. Results of extensive testing covering both functional performance and environmental behaviour (mechanical, thermal vacuum, radiations) aspects are reported. Most of the work has been completed, but an extension has been proposed for checking and comparing the behaviour of doped fibers under gamma radiation.

Applications of Optical Coherent Transient Technology to Pulse Shaping, Spectral Filtering Arbitrary Waveform Generation and RF Beamforming

DTIC Science & Technology

2006-04-14

the EOPM (~1 mW) was amplified by injection locking of a high power diode laser and further amplified to ~300 mW with a semiconductor optical ...The spectra of 8 GHz CW phase modulated signals in cascaded injection locking system from (a) master laser ; (b) the first slave, and (c) the second...cascaded injection locked amplifiers at 793nm, and frequency chirped lasers at 793nm. 15. SUBJECT TERMS Optical Coherent Transients, Spatial

Method of developing all-optical trinary JK, D-type, and T-type flip-flops using semiconductor optical amplifiers.

PubMed

Garai, Sisir Kumar

2012-04-10

To meet the demand of very fast and agile optical networks, the optical processors in a network system should have a very fast execution rate, large information handling, and large information storage capacities. Multivalued logic operations and multistate optical flip-flops are the basic building blocks for such fast running optical computing and data processing systems. In the past two decades, many methods of implementing all-optical flip-flops have been proposed. Most of these suffer from speed limitations because of the low switching response of active devices. The frequency encoding technique has been used because of its many advantages. It can preserve its identity throughout data communication irrespective of loss of light energy due to reflection, refraction, attenuation, etc. The action of polarization-rotation-based very fast switching of semiconductor optical amplifiers increases processing speed. At the same time, tristate optical flip-flops increase information handling capacity.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

22 W coherent GaAlAs amplifier array with 400 emitters

NASA Technical Reports Server (NTRS)

Krebs, D.; Herrick, R.; No, K.; Harting, W.; Struemph, F.

1991-01-01

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

Narrow line width dual wavelength semiconductor optical amplifier based random fiber laser

NASA Astrophysics Data System (ADS)

Shawki, Heba A.; Kotb, Hussein E.; Khalil, Diaa

2018-02-01

A novel narrow line-width Single longitudinal mode (SLM) dual wavelength random fiber laser of 20 nm separation between wavelengths of 1530 and 1550 nm is presented. The laser is based on Rayleigh backscattering in a standard single mode fiber of 2 Km length as distributed mirrors, and a semiconductor optical amplifier (SOA) as the optical amplification medium. Two optical bandpass filters are used for the two wavelengths selectivity, and two Faraday Rotator mirrors are used to stabilize the two lasing wavelengths against fiber random birefringence. The optical signal to noise ratio (OSNR) was measured to be 38 dB. The line-width of the laser was measured to be 13.3 and 14 KHz at 1530 and 1550 nm respectively, at SOA pump current of 370 mA.

Effects of two-photon absorption on all optical logic operation based on quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Dutta, Niloy K.

2018-01-01

We investigate all-optical logic operation in quantum-dot semiconductor optical amplifier (QD-SOA) based Mach-Zehnder interferometer considering the effects of two-photon absorption (TPA). TPA occurs during the propagation of sub-picosecond pulses in QD-SOA, which leads to a change in carrier recovery dynamics in quantum-dots. We utilize a rate equation model to take into account carrier refill through TPA and nonlinear dynamics including carrier heating and spectral hole burning in the QD-SOA. The simulation results show the TPA-induced pumping in the QD-SOA can reduce the pattern effect and increase the output quality of the all-optical logic operation. With TPA, this scheme is suitable for high-speed Boolean logic operation at 320 Gb/s.

Ring-shaped active mode-locked tunable laser using quantum-dot semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Zhang, Mingxiao; Wang, Yongjun; Liu, Xinyu

2018-03-01

In this paper, a lot of simulations has been done for ring-shaped active mode-locked lasers with quantum-dot semiconductor optical amplifier (QD-SOA). Based on the simulation model of QD-SOA, we discussed about the influence towards mode-locked waveform frequency and pulse caused by QD-SOA maximum mode peak gain, active layer loss coefficient, bias current, incident light pulse, fiber nonlinear coefficient. In the meantime, we also take the tunable performance of the laser into consideration. Results showed QD-SOA a better performance than original semiconductor optical amplifier (SOA) in recovery time, line width, and nonlinear coefficients, which makes it possible to output a locked-mode impulse that has a higher impulse power, narrower impulse width as well as the phase is more easily controlled. After a lot of simulations, this laser can realize a 20GHz better locked-mode output pulse after 200 loops, where the power is above 17.5mW, impulse width is less than 2.7ps, moreover, the tunable wavelength range is between 1540nm-1580nm.

Influence of optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-10-01

We numerically investigate the influence of the optical pumping wavelength on the ultrafast gain and phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by solving 1088 coupled rate equations. The temporal variations of the gain and phase recovery response at the ground state (GS) of QDs are calculated at various signal wavelengths when the optical pumping wavelengths at the excited state (ES) of QDs are varied. The phase recovery response is fastest when the wavelength of the signal and pumping beams corresponds to the respective emission wavelength of the GS and the ES in the same size of QDs. The absorption efficiency of the optical pumping beam at the ES is determined by the Lorentzian line shape function of the homogeneous broadening.

Effect of input signal and filter parameters on patterning effect in a semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Hussain, Kamal; Pratap Singh, Satya; Kumar Datta, Prasanta

2013-11-01

A numerical investigation is presented to show the dependence of patterning effect (PE) of an amplified signal in a bulk semiconductor optical amplifier (SOA) and an optical bandpass filter based amplifier on various input signal and filter parameters considering both the cases of including and excluding intraband effects in the SOA model. The simulation shows that the variation of PE with input energy has a characteristic nature which is similar for both the cases. However the variation of PE with pulse width is quite different for the two cases, PE being independent of the pulse width when intraband effects are neglected in the model. We find a simple relationship between the PE and the signal pulse width. Using a simple treatment we study the effect of the amplified spontaneous emission (ASE) on PE and find that the ASE has almost no effect on the PE in the range of energy considered here. The optimum filter parameters are determined to obtain an acceptable extinction ratio greater than 10 dB and a PE less than 1 dB for the amplified signal over a wide range of input signal energy and bit-rate.

Remote-seeded WDM-PON upgrade using linear semiconductor opticalamplifiers

NASA Astrophysics Data System (ADS)

Martínez, J. J.; Merayo, N.; Villafranca, A.; Garcés, I.

2013-05-01

In this work we have assessed the capacity of a linear (gain-clamped) semiconductor optical amplifier to enhance the budget of WDM PON network links for their evolution from FTTC to FTTH access. A wavelength-seeded network architecture has been considered, evaluating the performance improvement obtained by the use of an amplifier for the cases of link reach extension and optical splitting to reach end users. The evaluation measurements have shown that the extra budget is enough to compensate for the losses of a passive splitter up to atleast 1:16 division rate or to highly increment reach of the network.

Recent Results With Coupled Opto-Electronic Oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, L.; Wu, C.; Davis, L.; Forouhar, S.

1998-07-01

We present experimental results of coupled opto-electronic oscillators (COEOs) constructed with a semiconductor optical-amplifier-based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding-pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 ps and RF signals as high in frequency as 18 GHz with a spectral purity comparable to an HP 8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Recent results with the coupled opto-electronic oscillator

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-11-01

We present experimental results of coupled opto-electronic oscillators (COEO) constructed with a semiconductor optical amplifier based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Monolithically integrated quantum dot optical modulator with Semiconductor optical amplifier for short-range optical communications

NASA Astrophysics Data System (ADS)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed. Broadband QD optical gain material was used to achieve Gbps-order high-speed optical data transmission, and an optical gain change as high as approximately 6-7 dB was obtained with a low OGM voltage of 2.0 V. Loss of optical power due to insertion of the device was also effectively compensated for by the SOA section. Furthermore, it was confirmed that the QD-OGM/SOA device helped achieve 6.0-Gbps error-free optical data transmission over a 2.0-km-long photonic crystal fiber. We also successfully demonstrated generation of Gbps-order, high-speed, and error-free optical signals in the >5.5-THz broadband optical frequency bandwidth larger than the C-band. These results suggest that the developed monolithically integrated QD-OGM/SOA device will be an advantageous and compact means of increasing the usable optical frequency channels for short-reach communications.

Integrated all-optical programmable logic array based on semiconductor optical amplifiers.

PubMed

Dong, Wenchan; Huang, Zhuyang; Hou, Jie; Santos, Rui; Zhang, Xinliang

2018-05-01

The all-optical programmable logic array (PLA) is one of the most important optical complex logic devices that can implement combinational logic functions. In this Letter, we propose and experimentally demonstrate an integrated all-optical PLA at the operation speed of 40 Gb/s. The PLA mainly consists of a delay interferometer (DI) and semiconductor optical amplifiers (SOAs) of different lengths. The DI is used to pre-code the input signals and improve the reconfigurability of the scheme. The longer SOAs are nonlinear media for generating canonical logic units (CLUs) using four-wave mixing. The shorter SOAs are used to select the appropriate CLUs by changing the working states; then reconfigurable logic functions can be output directly. The results show that all the CLUs are realized successfully, and the optical signal-to-noise ratios are above 22 dB. The exclusive NOR gate and exclusive OR gate are experimentally demonstrated based on output CLUs.

Phase Recovery Acceleration of Quantum-Dot Semiconductor Optical Amplifiers by Optical Pumping to Quantum-Well Wetting Layer

NASA Astrophysics Data System (ADS)

Kim, Jungho

2013-11-01

We theoretically investigate the phase recovery acceleration of quantum-dot (QD) semiconductor optical amplifiers (SOAs) by means of the optical pump injection to the quantum-well (QW) wetting layer (WL). We compare the ultrafast gain and phase recovery responses of QD SOAs in either the electrical or the optical pumping scheme by numerically solving 1088 coupled rate equations. The ultrafast gain recovery responses on the order of sub-picosecond are nearly the same for the two pumping schemes. The ultrafast phase recovery is not significantly accelerated by increasing the electrical current density, but greatly improved by increasing the optical pumping power to the QW WL. Because the phase recovery time of QD SOAs with the optical pumping scheme can be reduced down to several picoseconds, the complete phase recovery can be achieved when consecutive pulse signals with a repetition rate of 100 GHz is injected.

Optical Computing, 1991, Technical Digest Series, Vol. 6

DTIC Science & Technology

1992-05-22

lasers). Compound semiconductors may satisfy these requirements. For example, optical signal amplification by two-beam coupling and amplified phase... compound semiconductors can provide this type of implementationi. This paper presents results from a detailed investigation on potentials of the...conductivity to achieve high multichannel cell performance. We describe several high performance Gallium Phosphide multichannel Bragg cells which employ these

Modeling of Semiconductor Optical Amplifier Gain Characteristics for Amplification and Switching

NASA Astrophysics Data System (ADS)

Mahad, Farah Diana; Sahmah, Abu; Supa'at, M.; Idrus, Sevia Mahdaliza; Forsyth, David

2011-05-01

The Semiconductor Optical Amplifier (SOA) is presently commonly used as a booster or pre-amplifier in some communication networks. However, SOAs are also a strong candidate for utilization as multi-functional elements in future all-optical switching, regeneration and also wavelength conversion schemes. With this in mind, the purpose of this paper is to simulate the performance of the SOA for improved amplification and switching functions. The SOA is modeled and simulated using OptSim software. In order to verify the simulated results, a MATLAB mathematical model is also used to aid the design of the SOA. Using the model, the gain difference between simulated and mathematical results in the unsaturated region is <1dB. The mathematical analysis is in good agreement with the simulation result, with only a small offset due to inherent software limitations in matching the gain dynamics of the SOA.

Numerical study of wavelength-swept semiconductor ring lasers: the role of refractive-index nonlinearities in semiconductor optical amplifiers and implications for biomedical imaging applications.

PubMed

Bilenca, A; Yun, S H; Tearney, G J; Bouma, B E

2006-03-15

Recent results have demonstrated unprecedented wavelength-tuning speed and repetition rate performance of semiconductor ring lasers incorporating scanning filters. However, several unique operational characteristics of these lasers have not been adequately explained, and the lack of an accurate model has hindered optimization. We numerically investigated the characteristics of these sources, using a semiconductor optical amplifier (SOA) traveling-wave Langevin model, and found good agreement with experimental measurements. In particular, we explored the role of the SOA refractive-index nonlinearities in determining the intracavity frequency-shift-broadening and the emitted power dependence on scan speed and direction. Our model predicts both continuous-wave and pulse operation and shows a universal relationship between the output power of lasers that have different cavity lengths and the filter peak frequency shift per round trip, therefore revealing the advantage of short cavities for high-speed biomedical imaging.

Compensation of power drops in reflective semiconductor optical amplifier-based passive optical network with upstream data rate adjustment

NASA Astrophysics Data System (ADS)

Yeh, Chien-Hung; Chow, Chi-Wai; Chiang, Ming-Feng; Shih, Fu-Yuan; Pan, Ci-Ling

2011-09-01

In a wavelength division multiplexed-passive optical network (WDM-PON), different fiber lengths and optical components would introduce different power budgets to different optical networking units (ONUs). Besides, the power decay of the distributed optical carrier from the optical line terminal owing to aging of the optical transmitter could also reduce the injected power into the ONU. In this work, we propose and demonstrate a carrier distributed WDM-PON using a reflective semiconductor optical amplifier-based ONU that can adjust its upstream data rate to accommodate different injected optical powers. The WDM-PON is evaluated at standard-reach (25 km) and long-reach (100 km). Bit-error rate measurements at different injected optical powers and transmission lengths show that by adjusting the upstream data rate of the system (622 Mb/s, 1.25 and 2.5 Gb/s), error-free (<10-9) operation can still be achieved when the power budget drops.

All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

2006-09-01

By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

10-Gbps optical duobinary signal generated by bandwidth-limited reflective semiconductor optical amplifier in colorless optical network units and compensated by fiber Bragg grating-based equalizer in optical line terminal

NASA Astrophysics Data System (ADS)

Fu, Meixia; Zhang, Min; Wang, Danshi; Cui, Yue; Han, Huanhuan

2016-10-01

We propose a scheme of optical duobinary-modulated upstream transmission system for reflective semiconductor optical amplifier-based colorless optical network units in 10-Gbps wavelength-division multiplexed passive optical network (WDM-PON), where a fiber Bragg grating (FBG) is adopted as an optical equalizer for better performance. The demodulation module is extremely simple, only needing a binary intensity modulation direct detection receiver. A better received sensitivity of -16.98 dBm at bit rate error (BER)=1.0×10-4 can be achieved at 120 km without FBG, and the BER at the sensitivity of -18.49 dBm can be up to 2.1×10-5 at the transmission distance of 160 km with FBG, which demonstrates the feasibility of our proposed scheme. Moreover, it could be a high cost-effectiveness scheme for WDM-PON in the future.

Ultra-wideband microwave photonic filter with a high Q-factor using a semiconductor optical amplifier.

PubMed

Chen, Han

2017-04-01

An ultra-wideband microwave photonic filter (MPF) with a high quality (Q)-factor based on the birefringence effects in a semiconductor optical amplifier (SOA) is presented, and the theoretical fundamentals of the design are explained. The proposed MPF along orthogonal polarization in an active loop operates at up to a Ku-band and provides a tunable free spectral range from 15.44 to 19.44 GHz by controlling the SOA injection current. A prototype of the equivalent second-order infinite impulse response filter with a Q-factor over 6300 and a rejection ration exceeding 41 dB is experimentally demonstrated.

Analytical Characterization on Pulse Propagation in a Semiconductor Optical Amplifier Based on Homotopy Analysis Method

NASA Astrophysics Data System (ADS)

Jia, Xiaofei

2018-06-01

Starting from the basic equations describing the evolution of the carriers and photons inside a semiconductor optical amplifier (SOA), the equation governing pulse propagation in the SOA is derived. By employing homotopy analysis method (HAM), a series solution for the output pulse by the SOA is obtained, which can effectively characterize the temporal features of the nonlinear process during the pulse propagation inside the SOA. Moreover, the analytical solution is compared with numerical simulations with a good agreement. The theoretical results will benefit the future analysis of other problems related to the pulse propagation in the SOA.

Dynamic chirp control of all-optical format-converted pulsed data from a multi-wavelength inverse-optical-comb injected semiconductor optical amplifier.

PubMed

Lin, Gong-Ru; Pan, Ci-Ling; Yu, Kun-Chieh

2007-10-01

By spectrally and temporally reshaping the gain-window of a traveling-wave semiconductor optical amplifier (TWSOA) with a backward injected multi- or single-wavelength inverse-optical-comb, we theoretically and experimentally investigate the dynamic frequency chirp of the all-optical 10GBit/s Return-to-Zero (RZ) data-stream format-converted from the TWSOA under strong cross-gain depletion scheme. The multi-wavelength inverse-optical-comb injection effectively depletes the TWSOA gain spectrally and temporally, remaining a narrow gain-window and a reduced spectral linewidth and provide a converted RZ data with a smaller peak-to-peak frequency chirp of 6.7 GHz. Even at high inverse-optical-comb injection power and highly biased current condition for improving the operational bit-rate, the chirp of the multi-wavelength-injection converted RZ pulse is still 2.1-GHz smaller than that obtained by using single-wavelength injection at a cost of slight pulse-width broadening by 1 ps.

Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Kim, Jungho; Yu, Bong-Ahn

2015-03-01

We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases.

Gain in three-dimensional metamaterials utilizing semiconductor quantum structures

NASA Astrophysics Data System (ADS)

Schwaiger, Stephan; Klingbeil, Matthias; Kerbst, Jochen; Rottler, Andreas; Costa, Ricardo; Koitmäe, Aune; Bröll, Markus; Heyn, Christian; Stark, Yuliya; Heitmann, Detlef; Mendach, Stefan

2011-10-01

We demonstrate gain in a three-dimensional metal/semiconductor metamaterial by the integration of optically active semiconductor quantum structures. The rolling-up of a metallic structure on top of strained semiconductor layers containing a quantum well allows us to achieve a tightly bent superlattice consisting of alternating layers of lossy metallic and amplifying gain material. We show that the transmission through the superlattice can be enhanced by exciting the quantum well optically under both pulsed or continuous wave excitation. This points out that our structures can be used as a starting point for arbitrary three-dimensional metamaterials including gain.

Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication

NASA Astrophysics Data System (ADS)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Matsumoto, Atsushi; Kawanishi, Tetsuya

2016-04-01

A monolithically integrated quantum dot (QD) optical gain modulator (OGM) with a QD semiconductor optical amplifier (SOA) was successfully developed with T-band (1.0 µm waveband) and O-band (1.3 µm waveband) QD optical gain materials for Gbps-order, high-speed optical data generation. The insertion loss due to coupling between the device and the optical fiber was effectively compensated for by the SOA section. It was also confirmed that the monolithic QD-OGM/SOA device enabled >4.8 Gbps optical data generation with a clear eye opening in the T-band. Furthermore, we successfully demonstrated error-free 4.8 Gbps optical data transmissions in each of the six wavelength channels over a 10-km-long photonic crystal fiber using the monolithic QD-OGM/SOA device in multiple O-band wavelength channels, which were generated by the single QD gain chip. These results suggest that the monolithic QD-OGM/SOA device will be advantageous in ultra-broadband optical frequency systems that utilize the T+O-band for short- and medium-range optical communications.

1.2-ps mode-locked semiconductor optical amplifier fiber laser pulses generated by 60-ps backward dark-optical comb injection and soliton compression.

PubMed

Lin, Gong-Ru; Chiu, I-Hsiang; Wu, Ming-Chung

2005-02-07

Optically harmonic mode-locking of a semiconductor optical amplifier fiber laser (SOAFL) induced by backward injecting a dark-optical comb is demonstrated for the first time. The dark-optical comb with 60-ps pulsewidth is generated from a Mach-Zehnder modulator, which is driven by an electrical comb at a DC offset of 0.3Vn. Theoretical simulation indicates that the backward injection of dark-optical comb results in a narrow gain window of 60 ps within one modulating period, providing a cross-gainmodulation induced mode-locking in the SOAFL with a shortest pulsewidth of 15 ps at repetition frequency of 1 GHz. The mode-locked SOAFL pulsewidth can be slightly shortened to 10.8 ps with a 200m-long dispersion compensating fiber. After nonlinearly soliton compression in a 5km-long single mode fiber, the pulsewidth, linewidth and time-bandwidth product become 1.2 ps, 2.06 nm and 0.31, respectively.

Photonic generation of ultra-wideband doublet pulse using a semiconductor-optical-amplifier based polarization-diversified loop.

PubMed

Luo, Bowen; Dong, Jianji; Yu, Yuan; Yang, Ting; Zhang, Xinliang

2012-06-15

We propose and demonstrate a novel scheme of ultra-wideband (UWB) doublet pulse generation using a semiconductor optical amplifier (SOA) based polarization-diversified loop (PDL) without any assistant light. In our scheme, the incoming gaussian pulse is split into two parts by the PDL, and each of them is intensity modulated by the other due to cross-gain modulation (XGM) in the SOA. Then, both parts are recombined with incoherent summation to form a UWB doublet pulse. Bi-polar UWB doublet pulse generation is demonstrated using an inverted gaussian pulse injection. Moreover, pulse amplitude modulation of UWB doublet is also experimentally demonstrated. Our scheme shows some advantages, such as simple implementation without assistant light and single optical carrier operation with good fiber dispersion tolerance.

Numerical investigation of differential phase noise and its power penalty for optical amplification using semiconductor optical amplifiers in DPSK applications

NASA Astrophysics Data System (ADS)

Hong, Wei; Huang, Dexiu; Zhang, Xinliang; Zhu, Guangxi

2007-11-01

A thorough simulation and evaluation of phase noise for optical amplification using semiconductor optical amplifier (SOA) is very important for predicting its performance in differential phase shift keyed (DPSK) applications. In this paper, standard deviation and probability distribution of differential phase noise are obtained from the statistics of simulated differential phase noise. By using a full-wave model of SOA, the noise performance in the entire operation range can be investigated. It is shown that nonlinear phase noise substantially contributes to the total phase noise in case of a noisy signal amplified by a saturated SOA and the nonlinear contribution is larger with shorter SOA carrier lifetime. Power penalty due to differential phase noise is evaluated using a semi-analytical probability density function (PDF) of receiver noise. Obvious increase of power penalty at high signal input powers can be found for low input OSNR, which is due to both the large nonlinear differential phase noise and the dependence of BER vs. receiving power curvature on differential phase noise standard deviation.

Broader, flatter optical spectra of passively mode-locked semiconductor lasers for a wavelength-division multiplexing source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eliyahu, Danny; Yariv, Amnon

1997-05-01

Using the time domain master equation for a complex electric-field pulse envelope, we find analytical results for the optical spectra of passively mode-locked semiconductor lasers. The analysis includes the effect of optical nonlinearity of semiconductor lasers, which is characterized by a slow saturable amplifier and absorber. Group velocity dispersion, bandwidth limiting, and self-phase modulation were considered as well. The FWHM of the spectrum profile was found to have a strong dependence on group velocity dispersion and self-phase modulation. For large absolute values of the chirp parameter, the optical spectra result in equispaced continuous wave frequencies, a large fraction of whichmore » have equal power. {copyright} 1997 Optical Society of America« less

All-optical 4-bit binary to binary coded decimal converter with the help of semiconductor optical amplifier-assisted Sagnac switch

NASA Astrophysics Data System (ADS)

Bhattachryya, Arunava; Kumar Gayen, Dilip; Chattopadhyay, Tanay

2013-04-01

All-optical 4-bit binary to binary coded decimal (BCD) converter has been proposed and described, with the help of semiconductor optical amplifier (SOA)-assisted Sagnac interferometric switches in this manuscript. The paper describes all-optical conversion scheme using a set of all-optical switches. BCD is common in computer systems that display numeric values, especially in those consisting solely of digital logic with no microprocessor. In many personal computers, the basic input/output system (BIOS) keep the date and time in BCD format. The operations of the circuit are studied theoretically and analyzed through numerical simulations. The model accounts for the SOA small signal gain, line-width enhancement factor and carrier lifetime, the switching pulse energy and width, and the Sagnac loop asymmetry. By undertaking a detailed numerical simulation the influence of these key parameters on the metrics that determine the quality of switching is thoroughly investigated.

Using Fabry-Perot laser diode and reflective semiconductor optical amplifier for long reach WDM-PON system

NASA Astrophysics Data System (ADS)

Yeh, C. H.; Chow, C. W.; Wu, Y. F.; Shih, F. Y.; Chi, S.

2011-10-01

In this investigation, we propose and investigate the simple self-injection locked Fabry-Perot laser diodes (FP-LDs) in optical line terminal (OLT); and wavelength-tunable optical network unit (ONU) using reflective optical semiconductor amplifier (RSOA) and FP-LD laser for downstream and upstream traffic in long reach (LR) wavelength division multiplexed-passive optical network (WDM-PON) respectively. The output performance of the proposed two laser sources in terms of power and side-mode suppression ratio (SMSR) has been discussed. Here, for the downstream traffic, the proposed optical transmitter can be directly modulated at 2.5 Gb/s on-off keying (OOK) format with nearly 0.4 dB power penalty at bit error rate (BER) of 10 -9 through 75 km single-mode fiber (SMF) transmission. Moreover, the proposed upstream transmitter can be directly modulated at 1.25 and 2.5 Gb/s with nearly 0.5 and 1.1 dB power penalty, respectively, at the BER of 10 -9.

Compensation of nonlinearity in a fiber-optic transmission system using frequency-degenerate phase conjugation through counter-propagating dual pump FWM in a semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Anchal, Abhishek; K, Pradeep Kumar; O'Duill, Sean; Anandarajah, Prince M.; Landais, Pascal

2018-04-01

We present a scheme of frequency-degenerate mid-span spectral inversion (MSSI) for nonlinearity compensation in fiber-optic transmission systems. The spectral inversion is obtained by using counter-propagating dual pump four-wave mixing in a semiconductor optical amplifier (SOA). Frequency-degeneracy between signal and conjugate is achieved by keeping two pump frequencies symmetrical about the signal frequency. We simulate the performance of MSSI for nonlinearity compensation by scrutinizing the improvement of the Q-factor of a 200 Gbps QPSK signal transmitted over a standard single mode fiber, as a function of launch power for different span lengths and number of spans. We demonstrate a 7.5 dB improvement in the input power dynamic range and an almost 83% increase in the transmission length for optimum MSSI parameters of -2 dBm pump power and 400 mA SOA current.

Demonstration of the feasibility of large-port-count optical switching using a hybrid Mach-Zehnder interferometer-semiconductor optical amplifier switch module in a recirculating loop.

PubMed

Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

2014-09-15

For what we believe is the first time, the feasibility of large-port-count nanosecond-reconfiguration-time optical switches is demonstrated using a hybrid approach, where Mach-Zehnder interferometric (MZI) switches provide low-loss, high-speed routing with short semiconductor optical amplifiers (SOAs) being integrated to enhance extinction. By repeatedly passing signals through a monolithic hybrid dilated 2×2 switch module in a recirculating loop, the potential performance of high-port-count switches using the hybrid approach is demonstrated. Experimentally, a single pass switch penalty of only 0.1 dB is demonstrated for the 2×2 module, while even after seven passes through the switch, equivalent to a 128×128 router, a penalty of only 2.4 dB is recorded at a data rate of 10 Gb/s.

Theoretical investigation of gain-clamped semiconductor optical amplifiers using the amplified spontaneous emission compensating effect

NASA Astrophysics Data System (ADS)

Jia, Xin-Hong

2006-12-01

The theoretical model on gain-clamped semiconductor optical amplifiers (GC-SOAs) based on compensating light has been constructed. Using this model, the effects of insertion position and peak reflectivity of the fiber Bragg grating (FBG) on the gain clamping and noise figure (NF) characteristics of GC-SOA are analyzed. The results show that the effect of the FBG insertion position on gain clamping is slight, but the lower NF can be obtained for input FBG-type GC-SOA; when the FBG peak wavelength is designed to close the signal wavelength, the gain clamping and NF characteristics that can be reached are better. Further study shows that, with the increased peak reflectivity of the FBG, the critical input power is broadened and the gain tends to be varied slowly; the larger bias current is helpful to raise gain and decrease the noise figure but is harmful to a gain flatness characteristic.

Demonstration of an SOA-assisted open metro-access infrastructure for heterogeneous services.

PubMed

Schmuck, H; Bonk, R; Poehlmann, W; Haslach, C; Kuebart, W; Karnick, D; Meyer, J; Fritzsche, D; Weis, E; Becker, J; Freude, W; Pfeiffer, T

2014-01-13

An open converged metro-access network approach allows for sharing optical layer resources like fibers and optical spectrum among different services and operators. We demonstrated experimentally the feasibility of such a concept by the simultaneous operation of multiple services showing different modulation formats and multiplexing techniques. Flexible access nodes are implemented including semiconductor optical amplifiers to create a transparent and reconfigurable optical ring network. The impact of cascaded optical amplifiers on the signal quality is studied along the ring. In addition, the influence of high power rival signals in the same waveband and in the same fiber is analyzed.

Improvements to tapered semiconductor MOPA laser design and testing

NASA Astrophysics Data System (ADS)

Beil, James A.; Shimomoto, Lisa; Swertfeger, Rebecca B.; Misak, Stephen M.; Campbell, Jenna; Thomas, Jeremy; Renner, Daniel; Mashanovitch, Milan; Leisher, Paul O.; Liptak, Richard W.

2018-02-01

This paper expands on previous work in the field of high power tapered semiconductor amplifiers and integrated master oscillator power amplifier (MOPA) devices. The devices are designed for watt-class power output and single-mode operation for free-space optical communication. This paper reports on improvements to the fabrication of these devices resulting in doubled electrical-to-optical efficiency, improved thermal properties, and improved spectral properties. A newly manufactured device yielded a peak power output of 375 mW continuous-wave (CW) at 3000 mA of current to the power amplifier and 300 mA of current to the master oscillator. This device had a peak power conversion efficiency of 11.6% at 15° C, compared to the previous device, which yielded a peak power conversion efficiency of only 5.0% at 15° C. The new device also exhibited excellent thermal and spectral properties, with minimal redshift up to 3 A CW on the power amplifier. The new device shows great improvement upon the excessive self-heating and resultant redshift of the previous device. Such spectral improvements are desirable for free-space optical communications, as variation in wavelength can degrade signal quality depending on the detectors being used and the medium of propagation.

CMOS Optoelectronic Lock-In Amplifier With Integrated Phototransistor Array.

PubMed

An Hu; Chodavarapu, Vamsy P

2010-10-01

We describe the design and development of an optoelectronic lock-in amplifier (LIA) for optical sensing and spectroscopy applications. The prototype amplifier is fabricated using Taiwan Semiconductor Manufacturing Co. complementary metal-oxide semiconductor 0.35-μm technology and uses a phototransistor array (total active area is 400 μm × 640μm) to convert the incident optical signals into electrical currents. The photocurrents are then converted into voltage signals using a transimpedance amplifier for subsequent convenient signal processing by the LIA circuitry. The LIA is optimized to be operational at 20-kHz modulation frequency but is operational in the frequency range from 13 kHz to 25 kHz. The system is tested with a light-emitting diode (LED) as the light source. The noise and signal distortions are suppressed with filters and a phase-locked loop (PLL) implemented in the LIA. The output dc voltage of the LIA is proportional to the incident optical power. The minimum measured dynamic reserve and sensitivity are 1.31 dB and 34 mV/μW, respectively. The output versus input relationship has shown good linearity. The LIA consumes an average power of 12.79 mW with a 3.3-V dc power supply.

Experimental investigation of polarization insensitivity and cascadability with semiconductor optical amplifier-based differential phase-shift keyed wavelength converter

NASA Astrophysics Data System (ADS)

Mao, Yaya; Wu, Chongqing; Liu, Bo; Ullah, Rahat; Tian, Feng

2017-12-01

We experimentally investigate the polarization insensitivity and cascadability of an all-optical wavelength converter for differential phase-shift keyed (DPSK) signals for the first time. The proposed wavelength converter is composed of a one-bit delay interferometer demodulation stage followed by a single semiconductor optical amplifier. The impact of input DPSK signal polarization fluctuation on receiver sensitivity for the converted signal is carried out. It is found that this scheme is almost insensitive to the state of polarization of the input DPSK signal. Furthermore, the cascadability of the converter is demonstrated in a two-path recirculating loop. Error-free transmission is achieved with 20 stage cascaded wavelength conversions over 2800 km, where the power penalty is <3.4 dB at bit error rate of 10-9.

Thermally robust semiconductor optical amplifiers and laser diodes

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Walker, Jeffrey D.; Deri, Robert J.; Petersen, Holly; Goward, William

2002-01-01

A highly heat conductive layer is combined with or placed in the vicinity of the optical waveguide region of active semiconductor components. The thermally conductive layer enhances the conduction of heat away from the active region, which is where the heat is generated in active semiconductor components. This layer is placed so close to the optical region that it must also function as a waveguide and causes the active region to be nearly the same temperature as the ambient or heat sink. However, the semiconductor material itself should be as temperature insensitive as possible and therefore the invention combines a highly thermally conductive dielectric layer with improved semiconductor materials to achieve an overall package that offers improved thermal performance. The highly thermally conductive layer serves two basic functions. First, it provides a lower index material than the semiconductor device so that certain kinds of optical waveguides may be formed, e.g., a ridge waveguide. The second and most important function, as it relates to this invention, is that it provides a significantly higher thermal conductivity than the semiconductor material, which is the principal material in the fabrication of various optoelectronic devices.

Precision Laser Development for Interferometric Space Missions NGO, SGO, and GRACE Follow-On

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2011-01-01

Optical fiber and semiconductor laser technologies have evolved dramatically over the last decade due to the increased demands from optical communications. We are developing a laser (master oscillator) and optical amplifier based on those technologies for interferometric space missions, including the gravitational-wave missions NGO/SGO (formerly LISA) and the climate monitoring mission GRACE Follow-On, by fully utilizing the matured wave-guided optics technologies. In space, where simpler and more reliable system is preferred, the wave-guided components are advantageous over bulk, crystal-based, free-space laser, such as NPRO (Nonplanar Ring Oscillator) and bulk-crystal amplifier.

Large area single-mode parity-time-symmetric laser amplifiers.

PubMed

Miri, Mohammad-Ali; LiKamWa, Patrik; Christodoulides, Demetrios N

2012-03-01

By exploiting recent developments associated with parity-time (PT) symmetry in optics, we here propose a new avenue in realizing single-mode large area laser amplifiers. This can be accomplished by utilizing the abrupt symmetry breaking transition that allows the fundamental mode to experience gain while keeping all the higher order modes neutral. Such PT-symmetric structures can be realized by judiciously coupling two multimode waveguides, one exhibiting gain while the other exhibits an equal amount of loss. Pertinent examples are provided for both semiconductor and fiber laser amplifiers. © 2012 Optical Society of America

Performance analysis of all-optical XOR gate with photonic crystal semiconductor optical amplifier-assisted Mach-Zehnder interferometer at 160 Gb/s

NASA Astrophysics Data System (ADS)

Kotb, Amer; Zoiros, Kyriakos E.

2017-11-01

The photonic crystal (PC) can be used to prohibit, confine, or control the propagation of light in a photonic band-gap. The performance of an ultrafast exclusive disjunction (XOR) gate-implemented with a photonic crystal semiconductor optical amplifier (PC-SOA)-assisted Mach-Zehnder interferometer (MZI) is numerically investigated and analyzed at a data rate of 160 Gb/s. The impact of the data signals and PC-SOA's critical parameters on the output quality factor (Q-factor) is examined and assessed. The simulation results demonstrate that the XOR gate which is based on the proposed scheme is capable of operating at the target data rate with logical correctness and high quality. This is achieved with better performance than when having conventional SOAs in the MZI, which justifies employing PC-SOAs as nonlinear elements.

Investigation of Fiber Optics Based Phased Locked Diode Lasers

NASA Technical Reports Server (NTRS)

Burke, Paul D.; Gregory, Don A.

1997-01-01

Optical power beaming requires a high intensity source and a system to address beam phase and location. A synthetic aperture array of phased locked sources can provide the necessary power levels as well as a means to correct for phase errors. A fiber optic phase modulator with a master oscillator and power amplifier (MOPA) using an injection-locking semiconductor optical amplifier has proven to be effective in correcting phase errors as large as 4pi in an interferometer system. Phase corrections with the piezoelectric fiber stretcher were made from 0 - 10 kHz, with most application oriented corrections requiring only 1 kHz. The amplifier did not lose locked power output while the phase was changed, however its performance was below expectation. Results of this investigation indicate fiber stretchers and amplifiers can be incorporated into a MOPA system to achieve successful earth based power beaming.

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

NASA Technical Reports Server (NTRS)

Goorjian, Peter M.; Agrawal, Govind P.; Kwak, Dochan (Technical Monitor)

1996-01-01

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Demonstration of an all-optical feed-forward delay line buffer using the quadratic Stark effect and two-photon absorption in an SOA.

PubMed

Soto, Horacio; Tong, Miriam A; Domínguez, Juan C; Muraoka, Ramón

2017-09-04

We have inserted into an unbiased semiconductor optical amplifier (SOA) a powerful control beam, with photon energy slightly smaller than that of the band-gap of its active region, for exciting two-photon absorption and the quadratic Stark effect. For the available SOA, we estimated these phenomena generated a nonlinear absorption coefficient β= -865 cm/GW and induced an appreciable birefringence inside the amplifier waveguide, which significantly modified the polarization-state of a probe beam. Based on these effects, we have experimentally demonstrated the operation of an all-optical buffer, using an 80 Gb/s optical pulse comb, as well as an unbiased SOA, which was therefore, devoid of amplified spontaneous emission and pattern effects.

Semiconductor lasers with a continuous tuning range above 100 nm in the nearest IR spectral region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostin, Yu O; Lobintsov, A A; Shramenko, M V

2015-08-31

We have developed two new types of lasers based on quantum-confined semiconductor optical amplifiers with an acousto-optic tunable filter in an external fibre ring cavity. The lasers offer continuous wavelength tuning ranges from 780 to 885 and from 880 to 1010 nm, 20 mW of cw output power, and a tuning rate up to 10{sup 4} nm s{sup -1} at an instantaneous spectral linewidth less than 0.1 nm. (lasers)

Intracavity dispersion effect on timing jitter of ultralow noise mode-locked semiconductor based external-cavity laser.

PubMed

Gee, S; Ozharar, S; Plant, J J; Juodawlkis, P W; Delfyett, P J

2009-02-01

We report the generation of optical pulse trains with 380 as of residual timing jitter (1 Hz-1 MHz) from a mode-locked external-cavity semiconductor laser, through a combination of optimizing the intracavity dispersion and utilizing a high-power, low-noise InGaAsP quantum-well slab-coupled optical waveguide amplifier gain medium. This is, to our knowledge, the lowest residual timing jitter reported to date from an actively mode-locked laser.

Erbium-doped zinc-oxide waveguide amplifiers for hybrid photonic integrated circuits

NASA Astrophysics Data System (ADS)

O'Neal, Lawrence; Anthony, Deion; Bonner, Carl; Geddis, Demetris

2016-02-01

CMOS logic circuits have entered the sub-100nm regime, and research is on-going to investigate the quantum effects that are apparent at this dimension. To avoid some of the constraints imposed by fabrication, entropy, energy, and interference considerations for nano-scale devices, many have begun designing hybrid and/or photonic integrated circuits. These circuits consist of transistors, light emitters, photodetectors, and electrical and optical waveguides. As attenuation is a limiting factor in any communications system, it is advantageous to integrate a signal amplifier. There are numerous examples of electrical amplifiers, but in order to take advantage of the benefits provided by optically integrated systems, optical amplifiers are necessary. The erbium doped fiber amplifier is an example of an optical amplifier which is commercially available now, but the distance between the amplifier and the device benefitting from amplification can be decreased and provide greater functionality by providing local, on-chip amplification. Zinc oxide is an attractive material due to its electrical and optical properties. Its wide bandgap (≍3.4 eV) and high refractive index (≍2) make it an excellent choice for integrated optics systems. Moreover, erbium doped zinc oxide (Er:ZnO) is a suitable candidate for optical waveguide amplifiers because of its compatibility with semiconductor processing technology, 1.54 μm luminescence, transparency, low resistivity, and amplification characteristics. This research presents the characterization of radio frequency magnetron sputtered Er:ZnO, the design and fabrication of integrated waveguide amplifiers, and device analysis.

Decreased oscillation threshold of a continuous-wave OPO using a semiconductor gain mirror.

PubMed

Siltanen, Mikael; Leinonen, Tomi; Halonen, Lauri

2011-09-26

We have constructed a singly resonant, continuous-wave optical parametric oscillator, where the signal beam resonates and is amplified by a semiconductor gain mirror. The gain mirror can significantly decrease the oscillation threshold compared to an identical system with conventional mirrors. The largest idler beam tuning range reached by changing the pump laser wavelength alone is from 3.6 to 4.7 µm. The single mode output power is limited but can be continuously scanned for at least 220 GHz by adding optical components in the oscillator cavity for increased stability. © 2011 Optical Society of America

Precision Laser Development for Gravitational Wave Space Mission

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2011-01-01

Optical fiber and semiconductor laser technologies have evolved dramatically over the last decade due to the increased demands from optical communications. We are developing a laser (master oscillator) and optical amplifier based on those technologies for interferometric space missions, such as the gravitational-wave mission LISA, and GRACE follow-on, by fully utilizing the mature wave-guided optics technologies. In space, where a simple and reliable system is preferred, the wave-guided components are advantageous over bulk, crystal-based, free-space laser, such as NPRO (Non-planar Ring Oscillator) and bulk-crystal amplifier, which are widely used for sensitive laser applications on the ground.

A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.

PubMed

Lee, Myung-Jae; Youn, Jin-Sung; Park, Kang-Yeob; Choi, Woo-Young

2014-02-10

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

Optical mixing of microwave signals in a nonlinear semiconductor laser amplifier modulator.

PubMed

Capmany, José; Sales, Salvador; Pastor, Daniel; Ortega, Beatriz

2002-02-11

In this paper we propose and evaluate the optical mixing of RF signals by means of exploiting the nonlinearity of a SLA modulator. The results show the potential for devices with low conversion losses (and even gain) and polarization insensitivity and reduced insertion losses.

Simulation and evaluation of phase noise for optical amplification using semiconductor optical amplifiers in DPSK applications

NASA Astrophysics Data System (ADS)

Hong, Wei; Huang, Dexiu; Zhang, Xinliang; Zhu, Guangxi

2008-01-01

A thorough simulation and evaluation of phase noise for optical amplification using semiconductor optical amplifier (SOA) is very important for predicting its performance in differential phase-shift keyed (DPSK) applications. In this paper, standard deviation and probability distribution of differential phase noise at the SOA output are obtained from the statistics of simulated differential phase noise. By using a full-wave model of SOA, the noise performance in the entire operation range can be investigated. It is shown that nonlinear phase noise substantially contributes to the total phase noise in case of a noisy signal amplified by a saturated SOA and the nonlinear contribution is larger with shorter SOA carrier lifetime. It is also shown that Gaussian distribution can be useful as a good approximation of the total differential phase noise statistics in the whole operation range. Power penalty due to differential phase noise is evaluated using a semi-analytical probability density function (PDF) of receiver noise. Obvious increase of power penalty at high signal input powers can be found for low input OSNR, which is due to both the large nonlinear differential phase noise and the dependence of BER vs. receiving power curvature on differential phase noise standard deviation.

Femtosecond wavelength tunable semiconductor optical amplifier fiber laser mode-locked by backward dark-optical-comb injection at 10 GHz.

PubMed

Lin, Gong-Ru; Chiu, I-Hsiang

2005-10-31

Femtosecond nonlinear pulse compression of a wavelength-tunable, backward dark-optical-comb injection harmonic-mode-locked semiconductor optical amplifier based fiber laser (SOAFL) is demonstrated for the first time. Shortest mode-locked SOAFL pulsewidth of 15 ps at 1 GHz is generated, which can further be compressed to 180 fs after linear chirp compensation, nonlinear soliton compression, and birefringent filtering. A maximum pulsewidth compression ratio for the compressed eighth-order SOAFL soliton of up to 80 is reported. The pedestal-free eighth-order soliton can be obtained by injecting the amplified pulse with peak power of 51 W into a 107.5m-long single-mode fiber (SMF), providing a linewidth and time-bandwidth product of 13.8 nm and 0.31, respectively. The tolerance in SMF length is relatively large (100-300 m) for obtaining <200fs SOAFL pulsewidth at wavelength tuning range of 1530-1560 nm. By extending the repetition frequency of dark-optical-comb up to 10 GHz, the mode-locked SOAFL pulsewidth can be slightly shortened from 5.4 ps to 3.9 ps after dispersion compensating, and further to 560 fs after second-order soliton compression. The lasing linewidth, time-bandwidth product and pulsewidth suppressing ratio of the SOAFL soliton become 4.5 nm, 0.33, and 10, respectively.

Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking

PubMed Central

Wang, Cheng; Schires, Kevin; Osiński, Marek; Poole, Philip J.; Grillot, Frédéric

2016-01-01

In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%. PMID:27302301

III-V Semiconductor Optical Micro-Ring Resonators

NASA Astrophysics Data System (ADS)

Grover, Rohit; Absil, Philippe P.; Ibrahim, Tarek A.; Ho, Ping-Tong

2004-05-01

We describe the theory of optical ring resonators, and our work on GaAs-AlGaAs and GaInAsP-InP optical micro-ring resonators. These devices are promising building blocks for future all-optical signal processing and photonic logic circuits. Their versatility allows the fabrication of ultra-compact multiplexers/demultiplexers, optical channel dropping filters, lasers, amplifiers, and logic gates (to name a few), which will enable large-scale monolithic integration for optics.

Modulation characteristics of a high-power semiconductor Master Oscillator Power Amplifier (MOPA)

NASA Technical Reports Server (NTRS)

Cornwell, Donald Mitchell, Jr.

1992-01-01

A semiconductor master oscillator-power amplifier was demonstrated using an anti-reflection (AR) coated broad area laser as the amplifier. Under CW operation, diffraction-limited single-longitudinal-mode powers up to 340 mW were demonstrated. The characteristics of the far-field pattern were measured and compared to a two-dimensional reflective Fabry-Perot amplifier model of the device. The MOPA configuration was modulated by the master oscillator. Prior to injection into the amplifier, the amplitude and frequency modulation properties of the master oscillator were characterized. The frequency response of the MOPA configuration was characterized for an AM/FM modulated injection beam, and was found to be a function of the frequency detuning between the master oscillator and the resonant amplifier. A shift in the phase was also observed as a function of frequency detuning; this phase shift is attributed to the optical phase shift imparted to a wave reflected from a Fabry-Perot cavity. Square-wave optical pulses were generated at 10 MHz and 250 MHz with diffraction-limited peak powers of 200 mW and 250 mW. The peak power for a given modulation frequency is found to be limited by the injected power and the FM modulation at that frequency. The modulation results make the MOPA attractive for use as a transmitter source in applications such as free-space communications and ranging/altimetry.

High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures.

PubMed

Haggett, Stephanie; Krakowski, Michel; Montrosset, Ivo; Cataluna, Maria Ana

2014-09-22

A high-power tunable external cavity laser configuration with a tapered quantum-dot semiconductor optical amplifier at its core is presented, enabling a record output power for a broadly tunable semiconductor laser source in the 1.2 - 1.3 µm spectral region. Two distinct optical amplifiers are investigated, using either chirped or unchirped quantum-dot structures, and their merits are compared, considering the combination of tunability and high output power generation. At 1230 nm, the chirped quantum-dot laser achieved a maximum power of 0.62 W and demonstrated nearly 100-nm tunability. The unchirped laser enabled a tunability range of 32 nm and at 1254 nm generated a maximum power of 0.97 W, representing a 22-fold increase in output power compared with similar narrow-ridge external-cavity lasers at the same current density.

Time-delayed behaviors of transient four-wave mixing signal intensity in inverted semiconductor with carrier-injection pumping

NASA Astrophysics Data System (ADS)

Hu, Zhenhua; Gao, Shen; Xiang, Bowen

2016-01-01

An analytical expression of transient four-wave mixing (TFWM) in inverted semiconductor with carrier-injection pumping was derived from both the density matrix equation and the complex stochastic stationary statistical method of incoherent light. Numerical analysis showed that the TFWM decayed decay is towards the limit of extreme homogeneous and inhomogeneous broadenings in atoms and the decaying time is inversely proportional to half the power of the net carrier densities for a low carrier-density injection and other high carrier-density injection, while it obeys an usual exponential decay with other decaying time that is inversely proportional to half the power of the net carrier density or it obeys an unusual exponential decay with the decaying time that is inversely proportional to a third power of the net carrier density for a moderate carrier-density injection. The results can be applied to studying ultrafast carrier dephasing in the inverted semiconductors such as semiconductor laser amplifier and semiconductor optical amplifier.

Tunable semiconductor laser at 1025-1095 nm range for OCT applications with an extended imaging depth

NASA Astrophysics Data System (ADS)

Shramenko, Mikhail V.; Chamorovskiy, Alexander; Lyu, Hong-Chou; Lobintsov, Andrei A.; Karnowski, Karol; Yakubovich, Sergei D.; Wojtkowski, Maciej

2015-03-01

Tunable semiconductor laser for 1025-1095 nm spectral range is developed based on the InGaAs semiconductor optical amplifier and a narrow band-pass acousto-optic tunable filter in a fiber ring cavity. Mode-hop-free sweeping with tuning speeds of up to 104 nm/s was demonstrated. Instantaneous linewidth is in the range of 0.06-0.15 nm, side-mode suppression is up to 50 dB and polarization extinction ratio exceeds 18 dB. Optical power in output single mode fiber reaches 20 mW. The laser was used in OCT system for imaging a contact lens immersed in a 0.5% intra-lipid solution. The cross-section image provided the imaging depth of more than 5mm.

Development of optical packet and circuit integrated ring network testbed.

PubMed

Furukawa, Hideaki; Harai, Hiroaki; Miyazawa, Takaya; Shinada, Satoshi; Kawasaki, Wataru; Wada, Naoya

2011-12-12

We developed novel integrated optical packet and circuit switch-node equipment. Compared with our previous equipment, a polarization-independent 4 × 4 semiconductor optical amplifier switch subsystem, gain-controlled optical amplifiers, and one 100 Gbps optical packet transponder and seven 10 Gbps optical path transponders with 10 Gigabit Ethernet (10GbE) client-interfaces were newly installed in the present system. The switch and amplifiers can provide more stable operation without equipment adjustments for the frequent polarization-rotations and dynamic packet-rate changes of optical packets. We constructed an optical packet and circuit integrated ring network testbed consisting of two switch nodes for accelerating network development, and we demonstrated 66 km fiber transmission and switching operation of multiplexed 14-wavelength 10 Gbps optical paths and 100 Gbps optical packets encapsulating 10GbE frames. Error-free (frame error rate < 1×10(-4)) operation was achieved with optical packets of various packet lengths and packet rates, and stable operation of the network testbed was confirmed. In addition, 4K uncompressed video streaming over OPS links was successfully demonstrated. © 2011 Optical Society of America

Broadband photonic single sideband frequency up-converter based on the cross polarization modulation effect in a semiconductor optical amplifier for radio-over-fiber systems.

PubMed

Lee, Seung-Hun; Kim, Hyoung-Jun; Song, Jong-In

2014-01-13

A broadband photonic single sideband (SSB) frequency up-converter based on the cross polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA) is proposed and experimentally demonstrated. An optical radio frequency (RF) signal in the form of an optical single sideband (OSSB) is generated by the photonic SSB frequency up-converter to solve the power fading problem caused by fiber chromatic dispersion. The generated OSSB RF signal has almost identical optical carrier power and optical sideband power. This SSB frequency up-conversion scheme shows an almost flat electrical RF power response as a function of the RF frequency in a range from 31 GHz to 75 GHz after 40 km single mode fiber (SMF) transmission. The photonic SSB frequency up-conversion technique shows negligible phase noise degradation. The phase noise of the up-converted RF signal at 49 GHz for an offset of 10 kHz is -93.17 dBc/Hz. Linearity analysis shows that the photonic SSB frequency up-converter has a spurious free dynamic range (SFDR) value of 79.51 dB · Hz(2/3).

Radio-over-fiber system with octuple frequency optical millimeter-wave signal generation using dual-parallel Mach-Zehnder modulator based on four-wave mixing in semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Zhou, Hui; Zeng, Yuting; Chen, Ming; Shen, Yunlong

2018-03-01

We have proposed a scheme of radio-over-fiber (RoF) system employing a dual-parallel Mach-Zehnder modulator (DP-MZM) based on four-wave mixing (FWM) in a semiconductor optical amplifier (SOA). In this scheme, the pump and the signal are generated by properly adjusting the direct current bias, modulation index of the DP-MZM, and the phase difference between the sub-MZMs. Because of the pump and the signal deriving from the same optical wave, the polarization states of the two lightwaves are copolarized. The single-pump FWM is polarization insensitive. After FWM and optical filtering, the optical millimeter-wave with octuple frequency is generated. About 40-GHz RoF system with a 2.5-Gbit / s signal is implemented by numerical simulation; the result shows that it has a good performance after the signal is transmitted over 40-km single-mode fiber. Then, the effects of the SOA's injection current and the carrier-to-sideband ratio on the system performance are discussed by simulation, and the optimum value for the system is obtained.

Narrow-band double-pass superluminescent diodes emitting at 1060 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lobintsov, A A; Perevozchikov, M V; Shramenko, M V

2009-09-30

Experimental data are presented which show that double-pass superluminescent diodes (SLDs) with fibre Bragg grating (FBG) based spectrally selective external reflectors offer emission linewidths in the range 0.1-1.0 nm, i.e., one to two orders of magnitude narrower in comparison with conventional SLDs and considerably broader in comparison with single-frequency semiconductor lasers. Their optical power at the single-mode fibre output reaches 5.0-8.0 mW, and can be raised to 50 mW using a semiconductor optical amplifier. (lasers)

Supermode-noise-free eighth-order femtosecond soliton from a backward dark-optical-comb-injection mode-locked semiconductor optical amplifier fiber laser.

PubMed

Lin, Gong-Ru; Pan, Ci-Ling; Chiu, I-Hsiang

2006-03-15

A backward dark-optical-comb-injection mode-locked semiconductor optical amplifier fiber laser (SOAFL) with a femtosecond pulse width and an ultrahigh supermode-noise suppressing ratio (SMSR) is primarily demonstrated. The mode-locked SOAFL pulse with a spectral linewidth of 0.45 nm is shortened from 15 to 8.6 ps under chirp compensation in a 420 m long dispersion-compensated fiber, corresponding to a time-bandwidth product of 0.48. The eighth-order soliton is obtained by the nonlinearly soliton's compression of the chirp-compensated SOAFL pulse in a 112 m long single-mode fiber at an input peak power of 51 W, providing the pulse width, the linewidth, and the nearly transform-limited time-bandwidth product are <200 fs, 13.8 nm, and 0.34, respectively. The phase noise and integrated timing jitter at an offset frequency below 1 MHz are -105 dBc/Hz and 0.8 ps, respectively. An ultrahigh pulse-compression ratio of 43 and a SMSR of 87 dB for the eighth-order SOAFL soliton are reported.

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

NASA Astrophysics Data System (ADS)

Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

2015-04-01

We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

40-Gbit/s all-optical circulating shift register with an inverter.

PubMed

Hall, K L; Donnelly, J P; Groves, S H; Fennelly, C I; Bailey, R J; Napoleone, A

1997-10-01

We report what is believed to be the first demonstration of an all-optical circulating shift register using an ultrafast nonlinear interferometer with a polarization-insensitive semiconductor optical amplifier as the nonlinear switching element. The device operates at 40 Gbits/s, to our knowledge the highest speed demonstrated to date. Also, the demonstration proves the cascadability of the ultrafast nonlinear interferometric switch.

Long-reach transmission experiment of a wavelength division multiplexed-passive optical networks transmitter based on reflective semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Jeon, Sie-Wook; Kim, Youngbok; Park, Chang-Soo

2012-01-01

We propose and demonstrate a long-reach wavelength division multiplexed-passive optical networks (WDM-PON) based on reflective semiconductor optical amplifiers (RSOAs) with easy maintenance of the optical source. Unlike previous studies the proposed WDM-PON uses two RSOAs: one for wavelength-selected light generation to provide a constant seed light to the second RSOA, the other for active external modulation. This method is free from intensity-fluctuated power penalties inherent to directly modulated single-RSOA sources, making long-reach transmission possible. Also, the wavelength of the modulated signal can easily be changed for the same RSOA by replacing the external feedback reflector, such as a fiber Bragg grating, or via thermal tuning. The seed light has a high-side-mode suppression ratio (SMSR) of 45 dB, and the bit error rate (BER) curve reveals that the upstream 1.25-Gb/s nonreturn-to-zero (NRZ) signal with a pseudo-random binary sequence (PRBS) of length of 215-1 has power penalties of 0.22 and 0.69 dB at BERs of 10-9 after 55-km and 110-km transmission due to fiber dispersion, respectively.

Optical speedup at transparency of the gain recovery in semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Hessler, T. P.; Dupertuis, M.-A.; Deveaud, B.; Emery, J.-Y.; Dagens, B.

2002-10-01

Experimental demonstration of optical speedup at transparency (OSAT) has been performed on a 1 mm long semiconductor optical amplifiers (SOA). OSAT is a recently proposed scheme that decreases the recovery time of an SOA while maintaining the available gain. It is achieved by externally injecting into the SOA the beam of a separate high power laser at energies around the transparency point. Even though the experimental conditions were not optimal, a beam of 100 mW decreases the recovery time by a third when it is injected in the vicinity of the material transparency point of the device. This acceleration of the device response without detrimental reduction of the gain is found to be effective over a broad wavelength window of about 20 nm around transparency. The injection of the accelerating beam into the gain region is a less efficient solution not only because the gain is then strongly diminished but also because speeding is reduced. This originates from the reduction of the amplified spontaneous emission power in the device, which counterbalances the speeding capabilities of the external laser beam. Another advantage of the OSAT scheme is realized in relatively long SOAs, which suffer from gain overshoot under strong current injection. Simulations show that OSAT decreases the gain overshoot, which should enable us to use OSAT to further speedup the response of long SOAs.

Auto-locking waveguide amplifier system for lidar and magnetometric applications

NASA Astrophysics Data System (ADS)

Pouliot, A.; Beica, H. C.; Carew, A.; Vorozcovs, A.; Carlse, G.; Kumarakrishnan, A.

2018-02-01

We describe a compact waveguide amplifier system that is suitable for optically pumping rubidium magnetometers. The system consists of an auto-locking vacuum-sealed external cavity diode laser, a semiconductor tapered amplifier and a pulsing unit based on an acousto-optic modulator. The diode laser utilises optical feedback from an interference filter to narrow the linewidth of an inexpensive laser diode to 500 kHz. This output is scannable over an 8 GHz range (at 780 nm) and can be locked without human intervention to any spectral marker in an expandable library of reference spectra, using the autolocking controller. The tapered amplifier amplifies the output from 50 mW up to 2 W with negligible distortions in the spectral quality. The system can operate at visible and near infrared wavelengths with MHz repetition rates. We demonstrate optical pumping of rubidium vapour with this system for magnetometric applications. The magnetometer detects the differential absorption of two orthogonally polarized components of a linearly polarized probe laser following optical pumping by a circularly polarized pump laser. The differential absorption signal is studied for a range of pulse lengths, pulse amplitudes and DC magnetic fields. Our results suggest that this laser system is suitable for optically pumping spin-exchange free magnetometers.

Lossless microwave photonic delay line using a ring resonator with an integrated semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Xie, Yiwei; Zhuang, Leimeng; Boller, Klaus-Jochen; Lowery, Arthur James

2017-06-01

Optical delay lines implemented in photonic integrated circuits (PICs) are essential for creating robust and low-cost optical signal processors on miniaturized chips. In particular, tunable delay lines enable a key feature of programmability for the on-chip processing functions. However, the previously investigated tunable delay lines are plagued by a severe drawback of delay-dependent loss due to the propagation loss in the constituent waveguides. In principle, a serial-connected amplifier can be used to compensate such losses or perform additional amplitude manipulation. However, this solution is generally unpractical as it introduces additional burden on chip area and power consumption, particularly for large-scale integrated PICs. Here, we report an integrated tunable delay line that overcomes the delay-dependent loss, and simultaneously allows for independent manipulation of group delay and amplitude responses. It uses a ring resonator with a tunable coupler and a semiconductor optical amplifier in the feedback path. A proof-of-concept device with a free spectral range of 11.5 GHz and a delay bandwidth in the order of 200 MHz is discussed in the context of microwave photonics and is experimentally demonstrated to be able to provide a lossless delay up to 1.1 to a 5 ns Gaussian pulse. The proposed device can be designed for different frequency scales with potential for applications across many other areas such as telecommunications, LIDAR, and spectroscopy, serving as a novel building block for creating chip-scale programmable optical signal processors.

Power enhanced frequency conversion system

NASA Technical Reports Server (NTRS)

Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

2001-01-01

A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.

Optical-spectrum-synthesizer design within an all-optical semiconductor gate to reduce waveform distortion induced by carrier-cooling relaxation at sub-Teraherz frequencies

NASA Astrophysics Data System (ADS)

Ueno, Yoshiyasu; Nakamoto, Ryouichi; Sakaguchi, Jun; Suzuki, Rei

2006-12-01

In frequency ranges above 200-300 GHz, the second slowest relaxation in the optical response (such as carrier-cooling relaxation having a time constant of 1-2 ps) of a semiconductor optical amplifier inside the conventional delayed-interference signal-wavelength converter (DISC) scheme is thought to start the distortion of all-optically gated waveforms. In this work, we design a digital optical-spectrum-synthesizer block that is part of the expanded DISC scheme. Our numerically calculated spectra, waveforms, and eye diagrams with assumed pseudorandom digital data pulses indicate that this synthesizer significantly removes strong distortion from the gated waveforms. A signal-to-noise ratio of 20 dB was obtained from our random-data eye diagram, providing proof of effectiveness in principle.

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering.

PubMed

Wu, Yingchen; Huang, Qiangsheng; Keyvaninia, Shahram; Katumba, Andrew; Zhang, Jing; Xie, Weiqiang; Morthier, Geert; He, Jian-Jun; Roelkens, Gunther

2016-09-05

We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 μm long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.5 Gb/s and 40 Gb/s AOWC for both wavelength up and down conversion.

Fast and slow light property improvement in erbium-doped amplifier

NASA Astrophysics Data System (ADS)

Peng, P. C.; Wu, F. K.; Kao, W. C.; Chen, J.; Lin, C. T.; Chi, S.

2013-01-01

This work experimentally demonstrates improvement of the fast light property in erbium-doped amplifiers at room temperature. The difference between the signal power and the pump power associated with bending loss is used to control the signal power at the different positions of the erbium-doped fiber (EDF) to improve the fast light property. Periodic bending of the EDF increases the time advance of the probe signal by over 288%. Additionally, this concept also could improve the fast light property using coherent population oscillations in semiconductor optical amplifiers.

Fast optical source for quantum key distribution based on semiconductor optical amplifiers.

PubMed

Jofre, M; Gardelein, A; Anzolin, G; Amaya, W; Capmany, J; Ursin, R; Peñate, L; Lopez, D; San Juan, J L; Carrasco, J A; Garcia, F; Torcal-Milla, F J; Sanchez-Brea, L M; Bernabeu, E; Perdigues, J M; Jennewein, T; Torres, J P; Mitchell, M W; Pruneri, V

2011-02-28

A novel integrated optical source capable of emitting faint pulses with different polarization states and with different intensity levels at 100 MHz has been developed. The source relies on a single laser diode followed by four semiconductor optical amplifiers and thin film polarizers, connected through a fiber network. The use of a single laser ensures high level of indistinguishability in time and spectrum of the pulses for the four different polarizations and three different levels of intensity. The applicability of the source is demonstrated in the lab through a free space quantum key distribution experiment which makes use of the decoy state BB84 protocol. We achieved a lower bound secure key rate of the order of 3.64 Mbps and a quantum bit error ratio as low as 1.14×10⁻² while the lower bound secure key rate became 187 bps for an equivalent attenuation of 35 dB. To our knowledge, this is the fastest polarization encoded QKD system which has been reported so far. The performance, reduced size, low power consumption and the fact that the components used can be space qualified make the source particularly suitable for secure satellite communication.

High-gain 1.3  μm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10  Gb/s.

PubMed

Fitsios, D; Giannoulis, G; Korpijärvi, V-M; Viheriälä, J; Laakso, A; Iliadis, N; Dris, S; Spyropoulou, M; Avramopoulos, H; Kanellos, G T; Pleros, N; Guina, M

2015-01-01

We report on the complete experimental evaluation of a GaInNAs/GaAs (dilute nitride) semiconductor optical amplifier that operates at 1.3 μm and exhibits 28 dB gain and a gain recovery time of 100 ps. Successful wavelength conversion operation is demonstrated using pseudorandom bit sequence 2⁷-1 non-return-to-zero bit streams at 5 and 10  Gb/s, yielding error-free performance and showing feasibility for implementation in various signal processing functionalities. The operational credentials of the device are analyzed in various operational regimes, while its nonlinear performance is examined in terms of four-wave mixing. Moreover, characterization results reveal enhanced temperature stability with almost no gain variation around the 1320 nm region for a temperature range from 20°C to 50°C. The operational characteristics of the device, along with the cost and energy benefits of dilute nitride technology, make it very attractive for application in optical access networks and dense photonic integrated circuits.

Semiconductor ring lasers subject to both on-chip filtered optical feedback and external conventional optical feedback

NASA Astrophysics Data System (ADS)

Khoder, Mulham; Van der Sande, Guy; Danckaert, Jan; Verschaffelt, Guy

2016-05-01

It is well known that the performance of semiconductor lasers is very sensitive to external optical feedback. This feedback can lead to changes in lasing characteristics and a variety of dynamical effects including chaos and coherence collapse. One way to avoid this external feedback is by using optical isolation, but these isolators and their packaging will increase the cost of the total system. Semiconductor ring lasers nowadays are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. Recently, some of us proposed to combine semiconductor ring lasers with on chip filtered optical feedback to achieve tunable lasers. The feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifier gates are used to control the feedback strength. In this work, we investigate how such lasers with filtered feedback are influenced by an external conventional optical feedback. The experimental results show intensity fluctuations in the time traces in both the clockwise and counterclockwise directions due to the conventional feedback. We quantify the strength of the conventional feedback induced dynamics be extracting the standard deviation of the intensity fluctuations in the time traces. By using filtered feedback, we can shift the onset of the conventional feedback induced dynamics to larger values of the feedback rate [ Khoder et al, IEEE Photon. Technol. Lett. DOI: 10.1109/LPT.2016.2522184]. The on-chip filtered optical feedback thus makes the semiconductor ring laser less senstive to the effect of (long) conventional optical feedback. We think these conclusions can be extended to other types of lasers.

Optical properties of nanowire metamaterials with gain

NASA Astrophysics Data System (ADS)

Lima, Joaquim; Adam, Jost; Rego, Davi; Esquerre, Vitaly; Bordo, Vladimir

2016-11-01

The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide. The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications.

All-optical computation system for solving differential equations based on optical intensity differentiator.

PubMed

Tan, Sisi; Wu, Zhao; Lei, Lei; Hu, Shoujin; Dong, Jianji; Zhang, Xinliang

2013-03-25

We propose and experimentally demonstrate an all-optical differentiator-based computation system used for solving constant-coefficient first-order linear ordinary differential equations. It consists of an all-optical intensity differentiator and a wavelength converter, both based on a semiconductor optical amplifier (SOA) and an optical filter (OF). The equation is solved for various values of the constant-coefficient and two considered input waveforms, namely, super-Gaussian and Gaussian signals. An excellent agreement between the numerical simulation and the experimental results is obtained.

Efficient semiconductor multicycle terahertz pulse source

NASA Astrophysics Data System (ADS)

Nugraha, P. S.; Krizsán, G.; Polónyi, Gy; Mechler, M. I.; Hebling, J.; Tóth, Gy; Fülöp, J. A.

2018-05-01

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons.

Two-photon fluorescence bioimaging with an all-semiconductor laser picosecond pulse source.

PubMed

Kuramoto, Masaru; Kitajima, Nobuyoshi; Guo, Hengchang; Furushima, Yuji; Ikeda, Masao; Yokoyama, Hiroyuki

2007-09-15

We have demonstrated successful two-photon excitation fluorescence bioimaging using a high-power pulsed all-semiconductor laser. Toward this purpose, we developed a pulsed light source consisting of a mode-locked laser diode and a two-stage diode laser amplifier. This pulsed light source provided optical pulses of 5 ps duration and having a maximum peak power of over 100 W at a wavelength of 800 nm and a repetition frequency of 500 MHz.

Optical arbitrary waveform generation based on multi-wavelength semiconductor fiber ring laser

NASA Astrophysics Data System (ADS)

Li, Peili; Ma, Xiaolu; Shi, Weihua; Xu, Enming

2017-09-01

A new scheme of generating optical arbitrary waveforms based on multi-wavelength semiconductor fiber ring laser (SFRL) is proposed. In this novel scheme, a wide and flat optical frequency comb (OFC) is provided directly by multi-wavelength SFRL, whose central frequency and comb spacing are tunable. OFC generation, de-multiplexing, amplitude and phase modulation, and multiplexing are implementing in an intensity and phase tunable comb filter, as induces the merits of high spectral coherence, satisfactory waveform control and low system loss. By using the mode couple theory and the transfer matrix method, the theoretical model of the scheme is established. The impacts of amplitude control, phase control, number of spectral line, and injection current of semiconductor optical amplifier (SOA) on the waveform similarity are studied using the theoretical model. The results show that, amplitude control and phase control error should be smaller than 1% and 0.64% respectively to achieve high similarity. The similarity of the waveform is improved with the increase of the number of spectral line. When the injection current of SOA is in a certain range, the optical arbitrary waveform reaches a high similarity.

Laser Development for Interferometry in Space

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2012-01-01

We are developing a laser (master oscillator) and optical amplifier for interferometric space missions, including the gravitational-wave missions NGO and OpTIIX experiment on the international space station. Our system is based on optical fiber and semiconductor laser technologies, which have evolved dramatically in the past decade. We will report on the latest status of the development work, including noise measurements and space qualification tests.

Small signal analysis of four-wave mixing in InAs/GaAs quantum-dot semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Ma, Shaozhen; Chen, Zhe; Dutta, Niloy K.

2009-02-01

A model to study four-wave mixing (FWM) wavelength conversion in InAs-GaAs quantum-dot semiconductor optical amplifier is proposed. Rate equations involving two QD states are solved to simulate the carrier density modulation in the system, results show that the existence of QD excited state contributes to the ultra fast recover time for single pulse response by serving as a carrier reservoir for the QD ground state, its speed limitations are also studied. Nondegenerate four-wave mixing process with small intensity modulation probe signal injected is simulated using this model, a set of coupled wave equations describing the evolution of all frequency components in the active region of QD-SOA are derived and solved numerically. Results show that better FWM conversion efficiency can be obtained compared with the regular bulk SOA, and the four-wave mixing bandwidth can exceed 1.5 THz when the detuning between pump and probe lights is 0.5 nm.

Simultaneous multichannel wavelength multicasting and XOR logic gate multicasting for three DPSK signals based on four-wave mixing in quantum-dot semiconductor optical amplifier.

PubMed

Qin, Jun; Lu, Guo-Wei; Sakamoto, Takahide; Akahane, Kouichi; Yamamoto, Naokatsu; Wang, Danshi; Wang, Cheng; Wang, Hongxiang; Zhang, Min; Kawanishi, Tetsuya; Ji, Yuefeng

2014-12-01

In this paper, we experimentally demonstrate simultaneous multichannel wavelength multicasting (MWM) and exclusive-OR logic gate multicasting (XOR-LGM) for three 10Gbps non-return-to-zero differential phase-shift-keying (NRZ-DPSK) signals in quantum-dot semiconductor optical amplifier (QD-SOA) by exploiting the four-wave mixing (FWM) process. No additional pump is needed in the scheme. Through the interaction of the input three 10Gbps DPSK signal lights in QD-SOA, each channel is successfully multicasted to three wavelengths (1-to-3 for each), totally 3-to-9 MWM, and at the same time, three-output XOR-LGM is obtained at three different wavelengths. All the new generated channels are with a power penalty less than 1.2dB at a BER of 10(-9). Degenerate and non-degenerate FWM components are fully used in the experiment for data and logic multicasting.

Long reach DWDM-PON with 12.5 GHz channel spacing based on comb source seeding

NASA Astrophysics Data System (ADS)

Zhou, Zhao; Nie, Hai-tao; Wang, Yao-jun

2016-07-01

A long reach dense wavelength division multiplexing passive optical network (DWDM-PON) with 12.5 GHz channel spacing is proposed and experimentally demonstrated. An optical frequency comb source is used to provide the multiwavelength seeding light, while reflective semiconductor optical amplifiers (RSOAs) are installed in both optical line terminal (OLT) and optical network units (ONUs) as colorless transmitter. The experimental results show that the bidirectional transmission for 1.2 Gbit/s data rate is achieved over 80 km single mode fiber (SMF).

Integrable high order UWB pulse photonic generator based on cross phase modulation in a SOA-MZI.

PubMed

Moreno, Vanessa; Rius, Manuel; Mora, José; Muriel, Miguel A; Capmany, José

2013-09-23

We propose and experimentally demonstrate a potentially integrable optical scheme to generate high order UWB pulses. The technique is based on exploiting the cross phase modulation generated in an InGaAsP Mach-Zehnder interferometer containing integrated semiconductor optical amplifiers, and is also adaptable to different pulse modulation formats through an optical processing unit which allows to control of the amplitude, polarity and time delay of the generated taps.

Ultra-broad band, low power, highly efficient coherent wavelength conversion in quantum dot SOA.

PubMed

Contestabile, G; Yoshida, Y; Maruta, A; Kitayama, K

2012-12-03

We report broadband, all-optical wavelength conversion over 100 nm span, in full S- and C-band, with positive conversion efficiency with low optical input power exploiting dual pump Four-Wave-Mixing in a Quantum Dot Semiconductor Optical Amplifier (QD-SOA). We also demonstrate by Error Vector Magnitude analysis the full transparency of the conversion scheme for coherent modulation formats (QPSK, 8-PSK, 16-QAM, OFDM-16QAM) in the whole C-band.

All-optical negabinary adders using Mach-Zehnder interferometer

NASA Astrophysics Data System (ADS)

Cherri, A. K.

2011-02-01

In contrast to optoelectronics, all-optical adders are proposed where all-optical signals are used to represent the input numbers and the control signals. In addition, the all-optical adders use the negabinary modified signed-digit number representation (an extension of the negabinary number system) to represent the input digits. Further, the ultra-speed of the designed circuits is achieved due to the use of ultra-fast all-optical switching property of the semiconductor optical amplifier and Mach-Zehnder interferometer (SOA-MZI). Furthermore, two-bit per digit binary encoding scheme is employed to represent the trinary values of the negabinary modified signed-digits.

A novel survivable WDM passive optical networks

NASA Astrophysics Data System (ADS)

Cheng, Xiaofei; Fang, Qin; Zhang, Yong; Chen, Bin; Lu, Fucai

2008-11-01

We propose a novel survivable wavelength-division multiplexed-passive optical network (WDM-PON) based on an N × N cyclic array waveguide grating (AWG) and reflective semiconductor optical amplifiers (RSOAs). ONUs are grouped and connected with extra connection fibres (CFs). Protection resources are provided mutually in ONU pairs. The characteristics of the proposed survivable WDM-PON and wavelength routing scheme are analyzed. Experiments of 10- Gb/s downstream and 1.25-Gb/s upstream transmission experiments are demonstrated to verify our proposed scheme.

Proceedings of the Conference on Emerging Technologies in Optical Sciences (ETOS 2004) held at University College Cork, Ireland on July 26-29, 2004

DTIC Science & Technology

2004-07-29

coherent coupling in large element arrays . 16 Characterisation of Picosecond Pulses Propagating through a Semiconductor Optical Amplifier...Effect is used. QSCE is widely used in optical intensity and phase modula- Oiz et • to tors [i]. The speed of reverse-biased devices is po- tentially...such devices generally have poor beam quality . The out-of- phase mode is In fact typically favoured in these devices because of the better

Numerical simulation of passively mode-locked fiber laser based on semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Yang, Jingwen; Jia, Dongfang; Zhang, Zhongyuan; Chen, Jiong; Liu, Tonghui; Wang, Zhaoying; Yang, Tianxin

2013-03-01

Passively mode-locked fiber laser (MLFL) has been widely used in many applications, such as optical communication system, industrial production, information processing, laser weapons and medical equipment. And many efforts have been done for obtaining lasers with small size, simple structure and shorter pulses. In recent years, nonlinear polarization rotation (NPR) in semiconductor optical amplifier (SOA) has been studied and applied as a mode-locking mechanism. This kind of passively MLFL has faster operating speed and makes it easier to realize all-optical integration. In this paper, we had a thorough analysis of NPR effect in SOA. And we explained the principle of mode-locking by SOA and set up a numerical model for this mode-locking process. Besides we conducted a Matlab simulation of the mode-locking mechanism. We also analyzed results under different working conditions and several features of this mode-locking process are presented. Our simulation shows that: Firstly, initial pulse with the peak power exceeding certain threshold may be amplified and compressed, and stable mode-locking may be established. After about 25 round-trips, stable mode-locked pulse can be obtained which has peak power of 850mW and pulse-width of 780fs.Secondly, when the initial pulse-width is greater, narrowing process of pulse is sharper and it needs more round-trips to be stable. Lastly, the bias currents of SOA affect obviously the shape of mode-locked pulse and the mode-locked pulse with high peak power and narrow width can be obtained through adjusting reasonably the bias currents of SOA.

Tunable ring laser with internal injection seeding and an optically-driven photonic crystal reflector.

PubMed

Zheng, Jie; Ge, Chun; Wagner, Clark J; Lu, Meng; Cunningham, Brian T; Hewitt, J Darby; Eden, J Gary

2012-06-18

Continuous tuning over a 1.6 THz region in the near-infrared (842.5-848.6 nm) has been achieved with a hybrid ring/external cavity laser having a single, optically-driven grating reflector and gain provided by an injection-seeded semiconductor amplifier. Driven at 532 nm and incorporating a photonic crystal with an azobenzene overlayer, the reflector has a peak reflectivity of ~80% and tunes at the rate of 0.024 nm per mW of incident green power. In a departure from conventional ring or external cavity lasers, the frequency selectivity for this system is provided by the passband of the tunable photonic crystal reflector and line narrowing in a high gain amplifier. Sub - 0.1 nm linewidths and amplifier extraction efficiencies above 97% are observed with the reflector tuned to 842.5 nm.

Rational harmonic mode-locking pulse quality of the dark-optical-comb injected semiconductor optical amplifier fiber ring laser.

PubMed

Lin, Gong-Ru; Lee, Chao-Kuei; Kang, Jung-Jui

2008-06-09

We study the rational harmonic mode-locking (RHML) order dependent pulse shortening force and dynamic chirp characteristics of a gain-saturated semiconductor optical amplifier fiber laser (SOAFL) under dark-optical-comb injection, and discuss the competition between mode-locking mechanisms in the SOAFL at high-gain and strong optical injection condition at higher RHML orders. The evolutions of spectra, mode-locking and continuous lasing powers by measuring the ratio of DC/pulse amplitude and the pulse shortening force (I(pulse)/P(avg)(2) ) are performed to determine the RHML capability of SOAFL. As the rational harmonic order increases up to 20, the spectral linewidth shrinks from 12 to 3 nm, the ratio of DC/pulse amplitude enlarges from 0.025 to 2.4, and the pulse-shortening force reduces from 0.9 to 0.05. At fundamental and highest RHML condition, we characterize the frequency detuning range to realize the mode-locking quality, and measure the dynamic frequency chirp of the RHML-SOAFL to distinguish the linear and nonlinear chirp after dispersion compensation. With increasing RHML order, the pulsewidth is broadened from 4.2 to 26.4 ps with corresponding chirp reducing from 0.7 to 0.2 GHz and linear/nonlinear chirp ratio changes from 4.3 to 1.3, which interprets the high-order chirp becomes dominates at higher RHML orders.

Cost-effective TCM-based WDM-PON for highly asymmetric traffic conditions.

PubMed

Lee, Danbi; Kwon, Won-Bae; Chae, Chang-Joon; Park, Chang-Soo

2015-11-16

A time compression multiplexing (TCM)-based wavelength division multiplexing passive optical network (WDM-PON) using a reflective semiconductor optical amplifier (RSOA) is proposed, and its feasibility is experimentally demonstrated. In the proposed system, the RSOA pre-amplifies a 10 Gb/s downstream signal and modulates the RSOA output, wavelength-locked to the downstream signal, with a 1.25 Gb/s upstream signal simultaneously. The sensitivity of the downstream signal is improved by about 3 dB through the RSOA. The downstream and upstream signals have power penalties of about 0.1 dB and 1.1 dB, respectively, at bit error rates (BERs) of 10(-9) after 20 km transmission.

Research and Development of Laser Diode Based Instruments for Applications in Space

NASA Technical Reports Server (NTRS)

Krainak, Michael; Abshire, James; Cornwell, Donald; Dragic, Peter; Duerksen, Gary; Switzer, Gregg

1999-01-01

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

Carbon Nanotube-Poly(vinylalcohol) Nanocomposite Film Devices: Applications for Femtosecond Fiber Laser Mode Lockers and Optical Amplifier Noise Suppressors

NASA Astrophysics Data System (ADS)

Sakakibara, Youichi; Rozhin, Aleksey G.; Kataura, Hiromichi; Achiba, Yohji; Tokumoto, Madoka

2005-04-01

We fabricated single-wall carbon nanotube (SWNT)/poly(vinylalcohol) (PVA) nanocomposite freestanding films and examined their application in devices in which the saturable absorption of SWNTs at near-infrared optical telecommunication wavelengths can be utilized. In a passively mode-locked fiber laser, we integrated a 30-μm-thick SWNT/PVA film into a fiber connection adaptor with the film sandwiched by a pair of fiber ferrules. A ring fiber laser with a SWNT/PVA saturable absorber was operated very easily in the mode-locked short-pulse mode with a pulse width of about 500 fs. Reproducible stable device performance was confirmed. In examining noise suppression for optical amplifiers, mixed light of semiconductor amplified spontaneous emission (ASE) source and 370 fs laser pulses was passed through a 100-μm-thick SWNT/PVA film. The transmission loss of the femtosecond pulse light was smaller than that of the ASE light. This proved that the SWNT/PVA film has the ability to suppress ASE noise.

All-optical reservoir computing.

PubMed

Duport, François; Schneider, Bendix; Smerieri, Anteo; Haelterman, Marc; Massar, Serge

2012-09-24

Reservoir Computing is a novel computing paradigm that uses a nonlinear recurrent dynamical system to carry out information processing. Recent electronic and optoelectronic Reservoir Computers based on an architecture with a single nonlinear node and a delay loop have shown performance on standardized tasks comparable to state-of-the-art digital implementations. Here we report an all-optical implementation of a Reservoir Computer, made of off-the-shelf components for optical telecommunications. It uses the saturation of a semiconductor optical amplifier as nonlinearity. The present work shows that, within the Reservoir Computing paradigm, all-optical computing with state-of-the-art performance is possible.

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

NASA Astrophysics Data System (ADS)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Measurement of characteristic parameters of 10 Gb/s bidirectional optical amplifier for XG-PON

NASA Astrophysics Data System (ADS)

Rakkammee, Suchaj; Boriboon, Budsara; Worasucheep, Duang-rudee; Wada, Naoya

2018-03-01

This research experimentally measured the characteristic parameters of 10 Gb/s bidirectional optical amplifier: (1) operating wavelength range, (2) small signal gain, (3) Polarization Dependent Loss (PDL), and (4) power consumption. Bidirectional amplifiers are the key component to extend coverage area as well as increase a number of users in Passive Optical Networks (PON). According to 10-Gigabit-capable PON or XG-PON standard, the downstream and upstream wavelengths are 1577 nm and 1270 nm respectively. Thus, our bidirectional amplifier consists of an Erbium Doped Fiber Amplifier (EDFA) and a Semiconductor Optical Amplifier (SOA) for downstream and upstream wavelength transmissions respectively. The operating wavelengths of EDFA and SOA are measured to be from 1570 nm to 1588 nm and 1263 nm to 1280 nm respectively. To measure gain, the input wavelengths of EDFA and SOA were fixed at 1577 nm and 1271 nm respectively, while their input powers were reduced by a variable optical attenuator. The small signal gain of EDFA is 22.5 dB at 0.15 Ampere pump current, whereas the small signal gain of SOA is 7.06 dB at 0.325 Ampere pump current. To measure PDL, which is a difference in output powers at various State of Polarization (SoP) of input signal, a polarization controller was inserted before amplifier to alter input SoP. The measured PDL of EDFA is insignificant with less than 0.1 dB. In contrast, the measured PDL of SOA is as large as 33 dB, indicating its strong polarization dependence. The total power consumptions were measured to be 1.5675 Watt.

Optical implementation of neural learning algorithms based on cross-gain modulation in a semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Li, Qiang; Wang, Zhi; Le, Yansi; Sun, Chonghui; Song, Xiaojia; Wu, Chongqing

2016-10-01

Neuromorphic engineering has a wide range of applications in the fields of machine learning, pattern recognition, adaptive control, etc. Photonics, characterized by its high speed, wide bandwidth, low power consumption and massive parallelism, is an ideal way to realize ultrafast spiking neural networks (SNNs). Synaptic plasticity is believed to be critical for learning, memory and development in neural circuits. Experimental results have shown that changes of synapse are highly dependent on the relative timing of pre- and postsynaptic spikes. Synaptic plasticity in which presynaptic spikes preceding postsynaptic spikes results in strengthening, while the opposite timing results in weakening is called antisymmetric spike-timing-dependent plasticity (STDP) learning rule. And synaptic plasticity has the opposite effect under the same conditions is called antisymmetric anti-STDP learning rule. We proposed and experimentally demonstrated an optical implementation of neural learning algorithms, which can achieve both of antisymmetric STDP and anti-STDP learning rule, based on the cross-gain modulation (XGM) within a single semiconductor optical amplifier (SOA). The weight and height of the potentitation and depression window can be controlled by adjusting the injection current of the SOA, to mimic the biological antisymmetric STDP and anti-STDP learning rule more realistically. As the injection current increases, the width of depression and potentitation window decreases and height increases, due to the decreasing of recovery time and increasing of gain under a stronger injection current. Based on the demonstrated optical STDP circuit, ultrafast learning in optical SNNs can be realized.

Optoelectronic Devices and Materials

NASA Astrophysics Data System (ADS)

Sweeney, Stephen; Adams, Alfred

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and GaSb and their alloys due to their direct band gap. Understanding the properties of these materials has been of vital importance in the development of optoelectronic devices. Since the first demonstration of a semiconductor laser in the early 1960s, optoelectronic devices have been produced in their millions, pervading our everyday lives in communications, computing, entertainment, lighting and medicine. It is perhaps their use in optical-fibre communications that has had the greatest impact on humankind, enabling high-quality and inexpensive voice and data transmission across the globe. Optical communications spawned a number of developments in optoelectronics, leading to devices such as vertical-cavity surface-emitting lasers, semiconductor optical amplifiers, optical modulators and avalanche photodiodes. In this chapter we discuss the underlying theory of operation of the most important optoelectronic devices. The influence of carrier-photon interactions is discussed in the context of producing efficient emitters and detectors. Finally we discuss how the semiconductor band structure can be manipulated to enhance device properties using quantum confinement and strain effects, and how the addition of dilute amounts of elements such as nitrogen is having a profound effect on the next generation of optoelectronic devices.

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

NASA Technical Reports Server (NTRS)

Thaik, Myo; Hommerich, U.; Schwartz, R. N.; Wilson, R. G.; Zavada, J. M.

1998-01-01

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Monolithic master oscillator power amplifier at 1.58 μm for lidar measurements

NASA Astrophysics Data System (ADS)

Faugeron, M.; Krakowski, M.; Robert, Y.; Vinet, E.; Primiani, P.; Le Goëc, J. P.; Parillaud, O.; van Dijk, F.; Vilera, M.; Consoli, A.; Tijero, J. M. G.; Esquivias, I.

2017-11-01

Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 μm, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 μm (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV).

An ultra-wideband tunable multi-wavelength Brillouin fibre laser based on a semiconductor optical amplifier and dispersion compensating fibre in a linear cavity configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zulkifli, M Z; Ahmad, H; Hassan, N A

2011-07-31

A multi-wavelength Brillouin fibre laser (MBFL) with an ultra-wideband tuning range from 1420 nm to 1620 nm is demonstrated. The MBFL uses an ultra-wideband semiconductor optical amplifier (SOA) and a dispersion compensating fibre (DCF) as the linear gain medium and nonlinear gain medium, respectively. The proposed MBFL has a wide tuning range covering the short (S-), conventional (C-) and long (L-) bands with a wavelength spacing of 0.08 nm, making it highly suitable for DWDM system applications. The output power of the observed Brillouin Stokes ranges approximately from -5.94 dBm to -0.41 dBm for the S-band, from -4.34 dBm tomore » 0.02 dBm for the C-band and from -2.19 dBm to 0.39 dBm for the L-band. The spacing between each adjacent wavelengths of all the three bands is about 0.08 nm, which is approximately 10.7 GHz for the frequency domain. (lasers)« less

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

PubMed Central

2012-01-01

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device. PMID:23009105

Ultrahigh-speed clock recovery with optical phase lock loop based on four-wave-mixing in a semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Kim, Dong Hwan; Kim, Sang Hyuck; Jo, Jae Cheol; Choi, Sang Sam

2000-08-01

A new phase lock loop (PLL) is proposed and demonstrated for clock recovery from 40 Gbps time-division-multiplexed (TDM) optical signal using simple optical phase lock loop circuit. The proposed clock recovery scheme improves the jitter effect in PLL circuit from the clock pulse laser of harmonically-mode locked fiber laser. The cross-correlation component between the optical signal and an optical clock pulse train is detected as a four-wave-mixing (FWM) signal generated in SOA. The lock-in frequency range of the clock recovery is found to be within 10 KHz.

All-optical phase discrimination using SOA.

PubMed

Power, Mark J; Webb, Roderick P; Manning, Robert J

2013-11-04

We describe the first experimental demonstration of a novel all-optical phase discrimination technique, which can separate the two orthogonal phase components of a signal onto different frequencies. This method exploits nonlinear mixing in a semiconductor optical amplifier (SOA) to separate a 10.65 Gbaud QPSK signal into two 10.65 Gb/s BPSK signals which are then demodulated using a delay interferometer (DI). Eye diagrams and spectral measurements verify correct operation and a conversion efficiency greater than 9 dB is observed on both output BPSK channels when compared with the input QPSK signal.

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

PubMed Central

2014-01-01

We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. PMID:24417791

Intensity noise properties of a compact laser device based on a miniaturized MOPA system for spectroscopic applications

NASA Astrophysics Data System (ADS)

Baumgärtner, S.; Juhl, S.; Opalevs, D.; Sahm, A.; Hofmann, J.; Leisching, P.; Paschke, K.

2018-02-01

We present a novel compact laser device based on a semiconductor master-oscillator power-amplifier (MOPA) emitting at 772 nm, suitable for quantum optic and spectroscopy. The optical performance of the laser device is characterized. For miniaturized lasers the thermal management is challenging, we therefore perform thermal simulations and measurements. The first demonstrator is emitting more than 3 W optical power with a linewidth below 2lMHz. Using this MOPA design also compact devices for quantum optics (e.g. rubidium atomic clock) and seed lasers for frequency conversion can be realized [1].

Optical analog-to-digital converter

DOEpatents

Vawter, G Allen [Corrales, NM; Raring, James [Goleta, CA; Skogen, Erik J [Albuquerque, NM

2009-07-21

An optical analog-to-digital converter (ADC) is disclosed which converts an input optical analog signal to an output optical digital signal at a sampling rate defined by a sampling optical signal. Each bit of the digital representation is separately determined using an optical waveguide interferometer and an optical thresholding element. The interferometer uses the optical analog signal and the sampling optical signal to generate a sinusoidally-varying output signal using cross-phase-modulation (XPM) or a photocurrent generated from the optical analog signal. The sinusoidally-varying output signal is then digitized by the thresholding element, which includes a saturable absorber or at least one semiconductor optical amplifier, to form the optical digital signal which can be output either in parallel or serially.

Development of a US Gravitational Wave Laser System for LISA

NASA Technical Reports Server (NTRS)

Camp, Jordan B.; Numata, Kenji

2015-01-01

A highly stable and robust laser system is a key component of the space-based LISA mission architecture.In this talk I will describe our plans to demonstrate a TRL 5 LISA laser system at Goddard Space Flight Center by 2016.The laser system includes a low-noise oscillator followed by a power amplifier. The oscillator is a low-mass, compact 10mW External Cavity Laser, consisting of a semiconductor laser coupled to an optical cavity, built by the laser vendorRedfern Integrated Optics. The amplifier is a diode-pumped Yb fiber with 2W output, built at Goddard. I will show noiseand reliability data for the full laser system, and describe our plans to reach TRL 5 by 2016.

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

NASA Technical Reports Server (NTRS)

Hu, Qing (Inventor); Williams, Benjamin S. (Inventor)

2007-01-01

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

NASA Technical Reports Server (NTRS)

Williams, Benjamin S. (Inventor); Hu, Qing (Inventor)

2009-01-01

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

Characterization of wavelength-swept active mode locking fiber laser based on reflective semiconductor optical amplifier

NASA Astrophysics Data System (ADS)

Lee, Hwi Don; Lee, Ju Han; Yung Jeong, Myung; Kim, Chang-Seok

2011-07-01

The static and dynamic characteristics of a wavelength-swept active mode locking (AML) fiber laser are presented in both the time-region and wavelength-region. This paper shows experimentally that the linewidth of a laser spectrum and the bandwidth of the sweeping wavelength are dependent directly on the length and dispersion of the fiber cavity as well as the modulation frequency and sweeping rate under the mode-locking condition. To achieve a narrower linewidth, a longer length and higher dispersion of the fiber cavity as well as a higher order mode locking condition are required simultaneously. For a broader bandwidth, a lower order of the mode locking condition is required using a lower modulation frequency. The dynamic sweeping performance is also analyzed experimentally to determine its applicability to optical coherence tomography imaging. It is shown that the maximum sweeping rate can be improved by the increased free spectral range from the shorter length of the fiber cavity. A reflective semiconductor optical amplifier (RSOA) was used to enhance the modulation and dispersion efficiency. Overall a triangular electrical signal can be used instead of the sinusoidal signal to sweep the lasing wavelength at a high sweeping rate due to the lack of mechanical restrictions in the wavelength sweeping mechanism.

Stable passive optical clock generation in SOA-based fiber lasers.

PubMed

Wang, Jing-Yun; Lin, Kuei-Huei; Chen, Hou-Ren

2015-02-15

Stable optical pulse trains are obtained from 1.3-μm and 1.5-μm semiconductor optical amplifier (SOA)-based fiber lasers using passive optical technology. The waveforms depend on SOA currents, and the repetition rates can be tuned by varying the relative length of sub-cavities. The output pulse trains of these SOA-based fiber lasers are stable against intracavity polarization adjustment and environmental perturbation. The optical clock generation is explained in terms of mode competition, self-synchronization, and SOA saturation. Without resorting to any active modulation circuits or devices, the technology used here is simple and may find various applications in the future.

External amplification of OCT swept-sources for challenging applications: from 10 mW to more than 120 mW

NASA Astrophysics Data System (ADS)

Rivard, Maxime; Villeneuve, Alain; Lamouche, Guy

2017-02-01

For bioimaging applications, commercial swept-sources currently provide enough power (tens of milliwatts) insuring good imaging condition without damaging the tissues. For industrial applications, more power is needed since the amount of light collected can be very low due to challenging measurement conditions or due to poor sample reflectivity. To address this challenge, we explore three different setups to externally amplify the output of a commercial swept-source: a booster semiconductor optical amplifier (BOA), an erbium-doped fiber amplifier (EDFA) and a combination of both. These external amplification setups allow the exploration of emerging OCT applications without the need to develop new hardware.

Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

NASA Astrophysics Data System (ADS)

Gonzalez-Fernandez, A. A.; Liles, Alexandros A.; Persheyev, Saydulla; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of an alternative design of external-cavity hybrid lasers consisting of a III-V Semiconductor Optical Amplifier with fiber reflector and a Photonic Crystal (PhC) based resonant reflector on SOI. The Silicon reflector comprises a polymer (SU8) bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and sidemode suppression ratio of more than 25 dB.

Gain-Controlled Erbium-Doped Fiber Amplifier Using Mode-Selective Photonic Lantern

DTIC Science & Technology

2016-01-01

schematic diagram of the MSPL integrated with the FM-EDFA is shown in Fig. 3. Two laser diodes (LDs) at λp = 976 nm are connected to the MSPL through a...to co-directionally core pump the FM-EDFA. A tunable semiconductor laser (Santec TSL-210) was used to provide the signal. An optical isolator was...placed in the signal path to avoid spurious optical reflections that could destabilize the laser . In a similar configuration, the delivered signal was

Experimental demonstration of tunable multiple optical orthogonal codes sequences-based optical label for optical packets switching

NASA Astrophysics Data System (ADS)

Zhang, Chongfu; Qiu, Kun; Zhou, Heng; Ling, Yun; Wang, Yawei; Xu, Bo

2010-03-01

In this paper, the tunable multiple optical orthogonal codes sequences (MOOCS)-based optical label for optical packet switching (OPS) (MOOCS-OPS) is experimentally demonstrated for the first time. The tunable MOOCS-based optical label is performed by using fiber Bragg grating (FBG)-based optical en/decoders group and optical switches configured by using Field Programmable Gate Array (FPGA), and the optical label is erased by using Semiconductor Optical Amplifier (SOA). Some waveforms of the MOOCS-based optical label, optical packet including the MOOCS-based optical label and the payloads are obtained, the switching control mechanism and the switching matrix are discussed, the bit error rate (BER) performance of this system is also studied. These experimental results show that the tunable MOOCS-OPS scheme is effective.

Self-stabilizing optical clock pulse-train generator using SOA and saturable absorber for asynchronous optical packet processing.

PubMed

Nakahara, Tatsushi; Takahashi, Ryo

2013-05-06

We propose a novel, self-stabilizing optical clock pulse-train generator for processing preamble-free, asynchronous optical packets with variable lengths. The generator is based on an optical loop that includes a semiconductor optical amplifier (SOA) and a high-extinction spin-polarized saturable absorber (SA), with the loop being self-stabilized by balancing out the gain and absorption provided by the SOA and SA, respectively. The optical pulse train is generated by tapping out a small portion of a circulating seed pulse. The convergence of the generated pulse energy is enabled by the loop round-trip gain function that has a negative slope due to gain saturation in the SOA. The amplified spontaneous emission (ASE) of the SOA is effectively suppressed by the SA, and a backward optical pulse launched into the SOA enables overcoming the carrier-recovery speed mismatch between the SOA and SA. Without external control for the loop gain, a stable optical pulse train consisting of more than 50 pulses with low jitter is generated from a single 10-ps seed optical pulse even with a variation of 10 dB in the seed pulse intensity.

Millijoule-level 20 ps Nd:YAG oscillator-amplifier laser system for investigation of stimulated Raman scattering and optical parametric generation

NASA Astrophysics Data System (ADS)

Jelínek, Michal; Kubecek, Vàclav

2012-06-01

We report on quasi-continuously pumped oscillator-amplifier laser system. The laser oscillator was based on highly 2.4 at.% doped crystalline Nd:YAG in a bounce geometry and passively mode locked by a semiconductor saturable absorber mirror. Using the cavity dumping technique, 19 ps pulses with the energy of 20 μJ and Gaussian spatial beam profile were generated directly from the oscillator at the repetition rate up to 50 Hz. For applications requiring more energetic pulses the amplification was studied using either an identical highly doped Nd:YAG module in bounce geometry or flashlamp pumped Nd:YAG laser rod. Using compact all diode pumped oscillator-amplifier system, 130 μJ pulses were generated. The flashlamp pumped amplifier with 100 mm long Nd:YAG enabled to obtain higher energy. In the single pass configuration the pulse was amplified to 4.5 mJ, using the double pass configuration the pulse energy was further increased up to 20 mJ with the duration of 25 ps at 10 Hz. The developed laser system was used for investigation of stimulated Raman scattering in Strontium Barium Niobate and optical parametric generation in CdSiP2.

Towards zero-threshold optical gain using charged semiconductor quantum dots

DOE PAGES

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon; ...

2017-10-16

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain thresholdmore » due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.« less

Towards zero-threshold optical gain using charged semiconductor quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Kaifeng; Park, Young -Shin; Lim, Jaehoon

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain thresholdmore » due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. Furthermore, these measurements indicate the feasibility of ‘zero-threshold’ gain achievable by completely blocking the band-edge state with two electrons.« less

CMOS-compatible InP/InGaAs digital photoreceiver

DOEpatents

Lovejoy, Michael L.; Rose, Benny H.; Craft, David C.; Enquist, Paul M.; Slater, Jr., David B.

1997-01-01

A digital photoreceiver is formed monolithically on an InP semiconductor substrate and comprises a p-i-n photodetector formed from a plurality of InP/InGaAs layers deposited by an epitaxial growth process and an adjacent heterojunction bipolar transistor (HBT) amplifier formed from the same InP/InGaAs layers. The photoreceiver amplifier operates in a large-signal mode to convert a detected photocurrent signal into an amplified output capable of directly driving integrated circuits such as CMOS. In combination with an optical transmitter, the photoreceiver may be used to establish a short-range channel of digital optical communications between integrated circuits with applications to multi-chip modules (MCMs). The photoreceiver may also be used with fiber optic coupling for establishing longer-range digital communications (i.e. optical interconnects) between distributed computers or the like. Arrays of digital photoreceivers may be formed on a common substrate for establishing a plurality of channels of digital optical communication, with each photoreceiver being spaced by less than about 1 mm and consuming less than about 20 mW of power, and preferably less than about 10 mW. Such photoreceiver arrays are useful for transferring huge amounts of digital data between integrated circuits at bit rates of up to about 1000 Mb/s or more.

CMOS-compatible InP/InGaAs digital photoreceiver

DOEpatents

Lovejoy, M.L.; Rose, B.H.; Craft, D.C.; Enquist, P.M.; Slater, D.B. Jr.

1997-11-04

A digital photoreceiver is formed monolithically on an InP semiconductor substrate and comprises a p-i-n photodetector formed from a plurality of InP/InGaAs layers deposited by an epitaxial growth process and an adjacent heterojunction bipolar transistor (HBT) amplifier formed from the same InP/InGaAs layers. The photoreceiver amplifier operates in a large-signal mode to convert a detected photocurrent signal into an amplified output capable of directly driving integrated circuits such as CMOS. In combination with an optical transmitter, the photoreceiver may be used to establish a short-range channel of digital optical communications between integrated circuits with applications to multi-chip modules (MCMs). The photoreceiver may also be used with fiber optic coupling for establishing longer-range digital communications (i.e. optical interconnects) between distributed computers or the like. Arrays of digital photoreceivers may be formed on a common substrate for establishing a plurality of channels of digital optical communication, with each photoreceiver being spaced by less than about 1 mm and consuming less than about 20 mW of power, and preferably less than about 10 mW. Such photoreceiver arrays are useful for transferring huge amounts of digital data between integrated circuits at bit rates of up to about 1,000 Mb/s or more. 4 figs.

Excess spontaneous emission in non-Hermitian optical systems. I. Laser amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siegman, A.E.

1989-02-01

Petermann first predicted in 1979 the existence of an excess-spontaneous-emission factor in gain-guided semiconductor lasers. We show that an excess spontaneous emission of this type, and also a correlation between the spontaneous emission into different cavity modes, will in fact be present in all open-sided laser resonators or optical lens guides. These properties arise from the non-self-adjoint or non-power-orthogonal nature of the optical resonator modes. The spontaneous-emission rate is only slightly enhanced in stable-resonator or index-guided structures, but can become very much larger than normal in gain-guided or geometrically unstable structures. Optical resonators or lens guides that have an excessmore » noise emission necessarily also exhibit an ''excess initial-mode excitation factor'' for externally injected signals. As a result, the excess spontaneous emission can be balanced out and the usual quantum-noise limit recovered in laser amplifiers and in injection-seeded laser oscillators, but not in free-running laser oscillators.« less

Analysis of all-optical temporal integrator employing phased-shifted DFB-SOA.

PubMed

Jia, Xin-Hong; Ji, Xiao-Ling; Xu, Cong; Wang, Zi-Nan; Zhang, Wei-Li

2014-11-17

All-optical temporal integrator using phase-shifted distributed-feedback semiconductor optical amplifier (DFB-SOA) is investigated. The influences of system parameters on its energy transmittance and integration error are explored in detail. The numerical analysis shows that, enhanced energy transmittance and integration time window can be simultaneously achieved by increased injected current in the vicinity of lasing threshold. We find that the range of input pulse-width with lower integration error is highly sensitive to the injected optical power, due to gain saturation and induced detuning deviation mechanism. The initial frequency detuning should also be carefully chosen to suppress the integration deviation with ideal waveform output.

Ultrasensitive biomolecular assays with amplifying nanowire FET biosensors

NASA Astrophysics Data System (ADS)

Chui, Chi On; Shin, Kyeong-Sik; Mao, Yufei

2013-09-01

In this paper, we review our recent development and validation of the ultrasensitive electronic biomolecular assays enabled by our novel amplifying nanowire field-effect transistor (nwFET) biosensors. Our semiconductor nwFET biosensor platform technology performs extreme proximity signal amplification in the electrical domain that requires neither labeling nor enzymes nor optics. We have designed and fabricated the biomolecular assay prototypes and developed the corresponding analytical procedures. We have also confirmed their analytical performance in quantitating key protein biomarker in human serum, demonstrating an ultralow limit of detection and concurrently high output current level for the first time.

All-optical noise reduction of fiber laser via intracavity SOA structure.

PubMed

Ying, Kang; Chen, Dijun; Pan, Zhengqing; Zhang, Xi; Cai, Haiwen; Qu, Ronghui

2016-10-10

We have designed a unique intracavity semiconductor optical amplifier (SOA) structure to suppress the relative intensity noise (RIN) for a fiber DFB laser. By exploiting the gain saturation effect of the SOA, a maximum noise suppression of 30 dB around the relaxation oscillation frequency is achieved, and the whole resonance relaxation oscillation peak completely disappears. Moreover, via a specially designed intracavity SOA structure, the optical intensity inside the SOA will be in a balanced state via the oscillation in the laser cavity, and the frequency noise of the laser will not be degraded with the SOA.

Study on the instantaneous frequency deviation of pulses switched from semiconductor optical amplifier-assisted Sagnac interferometer

NASA Astrophysics Data System (ADS)

Zoiros, Kyriakos E.; Vardakas, John S.; Tsigkas, Marios

2010-07-01

The instantaneous frequency deviation of the pulses switched from a semiconductor optical amplifier (SOA)-assisted Sagnac interferometer is theoretically studied and analyzed. By using explicit expressions for the phase response and its temporal derivative and applying a numerical model, a set of curves is obtained that allows us to investigate and assess the dependence of the function of interest on the critical operational parameters. From their interpretation, the basic design rules that must govern them in order for its profile to acquire a form suitable for practical exploitation are extracted. These suggest that the combination of the energy of the driving control pulses and the small signal gain of the SOA must be such that the latter is biased to operate up to the medium saturation regime. Moreover, the width of these pulses must not exceed 10% of their allocated time slot, while the role of the loop asymmetry and the SOA carrier lifetime is found to be less significant. If these conditions are satisfied, then it is feasible to make out of most of the considered interferometric configuration's phase response variation per time increment while being employed as a switching module.

Erbium/ytterbium co-doped double clad fiber amplifier, its applications and effects in fiber optic communication systems

NASA Astrophysics Data System (ADS)

Dua, Puneit

Increased demand for larger bandwidth and longer inter-amplifiers distances translates to higher power budgets for fiber optic communication systems in order to overcome large splitting losses and achieve acceptable signal-to-noise ratios. Due to their unique design ytterbium sensitized erbium doped, double clad fiber amplifiers; offer significant increase in the output powers that can be obtained. In this thesis we investigate, a one-stage, high power erbium and ytterbium co-doped double clad fiber amplifier (DCFA) with output power of 1.4W, designed and built in our lab. Experimental demonstration and numerical simulation techniques have been used to systematically study the applications of such an amplifier and the effects of incorporating it in various fiber optic communication systems. Amplitude modulated subcarrier multiplexed (AM-SCM) CATV distribution experiment has been performed to verify the feasibility of using this amplifier in an analog/digital communication system. The applications of the amplifier as a Fabry-Perot and ring fiber laser with an all-fiber cavity, a broadband supercontinuum source and for generation of high power, short pulses at 5GHz have been experimentally demonstrated. A variety of observable nonlinear effects occur due to the high intensity of the optical powers confined in micron-sized cores of the fibers, this thesis explores in detail some of these effects caused by using the high power Er/Yb double clad fiber amplifier. A fiber optic based analog/digital CATV system experiences composite second order (CSO) distortion due to the interaction between the gain tilt---the variation of gain with wavelength, of the doped fiber amplifier and the wavelength chirp of the directly modulated semiconductor laser. Gain tilt of the Er/Yb co-doped fiber amplifier has been experimentally measured and its contribution to the CSO of the system calculated. Theoretical analysis of a wavelength division multiplexed system with closely spaced channels has been carried out to show that crosstalk can occur due to the four-wave mixing products generated inside the high power Er/Yb DCFA. A model for parametric amplification due to four-wave mixing has been developed and used to analyze its application for short pulse generation and high speed optical time division multiplexing.

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

NASA Astrophysics Data System (ADS)

Klehr, A.; Wenzel, H.; Fricke, J.; Bugge, F.; Liero, A.; Hoffmann, Th.; Erbert, G.; Tränkle, G.

2015-03-01

Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling. Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses. In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M2lat ~ 1.1 and M2ver ~ 1.2 up to 4 W pulse power.

Remote Optical Control of an Optical Flip-Flop

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maywar, D.N.; Solomon, K.P.; Agrawal, G.P.

2007-11-01

We experimentally demonstrate control of a holding-beam–enabled optical flip-flop by means of optical signals that act in a remote fashion. These optical-control signals vary the holding-beam power by means of cross-gain modulation within a remotely located semiconductor optical amplifier (SOA). The power-modulated holding beam then travels through a resonant-type SOA, where flip-flop action occurs as the holding-beam power falls above and below the switching thresholds of the bistable hysteresis. Control is demonstrated using submilliwatt pulses whose wavelengths are not restricted to the vicinity of the holding beam. Benefits of remote control include the potential for controlling multiple flip-flops with amore » single pair of optical signals and for realizing all-optical control of any holding-beam–enabled flip-flop.« less

Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

PubMed

Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

Mitigation of Rayleigh crosstalk using noise suppression technique in 10-Gb/s REAM-SOA.

PubMed

Jeong, Jong Sool; Kim, Hyun-Soo; Choi, Byung-Seok; Kim, Dong Churl; Kim, Ki-Soo; Park, Mi-Ran; Kwon, O-Kyun

2012-11-19

We demonstrate a mitigation of Rayleigh back-scattering (RBS) impact in 10-Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA). The technique is based on the intensity-noise suppression of the centralized incoherent seed-light, which enables smooth evolution of deployed DWDM applications. We exhibit the power penalty of less than 1 dB at the large RBS crosstalk value of about 8 dB when the optical power of seed-light is lowered about -10 dBm.

Mode locking of a ring cavity semiconductor diode laser

NASA Astrophysics Data System (ADS)

Desbiens, Louis; Yesayan, Ararat; Piche, Michel

2000-12-01

We report new results on the generation and characterization of picosecond pulses from a self-mode-locked semiconductor diode laser. The active medium (InGaAs, 830-870 nm) is a semiconductor optical amplifier whose facets are cut at angle and AR coated. The amplifier is inserted in a three-minor ring cavity. Mode locking is purely passive; it takes place for specific alignment conditions. Trains of counterpropagating pulses are produced, with pulse duration varying from 1 .2 to 2 ps. The spectra of the counterpropagatmg pulses do not fully overlap; their central wavelengths differ by a few nm. The pulse repetition rate has been varied from 0.3 to 3 GHz. The pulses have been compressed to less than 500-fs duration with a grating pair. We discuss some of the potential physical mechanisms that could be involved in the dynamics of the mode-locked regime. Hysteresis in the LI curve has been observed. To characterize the pulses, we introduce the idea of a Pulse Quality Factor, where the pulse duration and spectral width are calculated from the second-order moments of the measured intensity autocorrelation and power spectral density.

10.7 Gb/s uncompensated transmission over a 470 km hybrid fiber link with in-line SOAs using MLSE and duobinary signals.

PubMed

Downie, John D; Hurley, Jason; Mauro, Yihong

2008-09-29

We experimentally demonstrate uncompensated 8-channel wavelength division multiplexing (WDM) and single channel transmission at 10.7 Gb/s over a 470 km hybrid fiber link with in-line semiconductor optical amplifiers (SOAs). Two different forms of the duobinary modulation format are investigated and compared. Maximum Likelihood Sequence Estimation (MLSE) receiver technology is found to significantly mitigate nonlinear effects from the SOAs and to enable the long transmission, especially for optical duobinary signals derived from differential phase shift keying (DPSK) signals directly detected after narrowband optical filter demodulation. The MLSE also helps to compensate for a non-optimal Fabry-Perot optical filter demodulator.

Simulation and analysis of OOK-to-BPSK format conversion based on gain-transparent SOA used as optical phase-modulator.

PubMed

Hong, Wei; Huang, Dexiu; Zhang, Xinliang; Zhu, Guangxi

2007-12-24

All-optical on-off keying (OOK) to binary phase-shift keying (BPSK) modulation format conversion based on gain-transparent semiconductor optical amplifier (GT-SOA) is simulated and analyzed, where GT-SOA is used as an all-optical phase-modulator (PM). Numerical simulation of the phase modulation effect of GT-SOA is performed using a wideband dynamic model of GT-SOA and the quality of the BPSK signal is evaluated using the differential-phase-Q factor. Performance improvement by holding light injection is analyzed and non-return-to-zero (NRZ) and return-to-zero (RZ) modulation formats of the OOK signal are considered.

Instrument for measuring dispersional distortions in optical fibers and cables

NASA Astrophysics Data System (ADS)

Alishev, Y. V.; Maryenko, A. A.; Smirnov, Y. V.; Uryadov, V. N.; Sinkevich, V. I.

1985-03-01

An instrument was developed and built for measuring the dispersional distortions in optical fibers and cables on the basis of pulse widening. The instrument consists of a laser as a light source, a master oscillator, an optical transmitter, an optical shunt with mode mixer, an optical receiver, a fiber length measuring device, a smoothly adjustable delay line, and a stroboscopic oscillograph. The optical transmitter contains a semiconductor laser with GaAs-GaAlAs diheterostructure and modulator with pulse generating avalanche-breakdown transistors. The optical receiver contains a germanium photodiode with internal amplification and photoreceiver amplifier with microwave bipolar germanium transistors. Matching of the instrument to the tested fiber line is done by passing radiation into the latter from an auxiliary small He-Ne laser through a directional coupler.

Methods to speed up the gain recovery of an SOA

NASA Astrophysics Data System (ADS)

Wang, Zhi; Wang, Yongjun; Meng, Qingwen; Zhao, Rui

2008-01-01

The semiconductor optical amplifiers (SOAs) are employed in all optical networking and all optical signal processing due to the excellent nonlinearity and high speed. The gain recovery time is the key parameter to describe the response speed of the SOA. The relationship between the gain dynamics and a few operation parameters is obtained in this article. A few simple formula and some simulations are demonstrated, from which, a few methods to improve the response speed of the SOA can be concluded as following, lengthening the active area, or lessening the cross area, increasing the injection current, increasing the probe power, operating with a CW holding beam.

Suppression of pattern dependence in 10 Gbps upstream transmission of WDM-PON with RSOA-based ONUs

NASA Astrophysics Data System (ADS)

Zhang, Min; Wang, Danshi; Cao, Zhihui; Chen, Xue; Huang, Shanguo

2013-11-01

The finite gain recovery time of the reflective semiconductor optical amplifier (RSOA) causes distortion and pattern dependence at high bit rates in colorless optical network units (ONUs) of WDM passive optical network (WDN-PON). We propose and demonstrate a scheme of upstream transmission of 10 Gbps NRZ signals directly modulated via a RSOA in a 25 km single fiber, where we use a fiber Bragg grating (FBG) as an offset filter to suppress the pattern dependence and improve the RSOA modulation bandwidth. Both experimental and simulation results are provided, which are useful results for designing cost-effective colorless transceivers.

Comparative assessment of erbium fiber ring lasers and reflective SOA linear lasers for fiber Bragg grating dynamic strain sensing.

PubMed

Wei, Heming; Krishnaswamy, Sridhar

2017-05-01

Fiber Bragg grating (FBG) dynamic strain sensors using both an erbium-based fiber ring laser configuration and a reflective semiconductor optical amplifier (RSOA)-based linear laser configuration are investigated theoretically and experimentally. Fiber laser models are first presented to analyze the output characteristics of both fiber laser configurations when the FBG sensor is subjected to dynamic strains at high frequencies. Due to differences in the transition times of erbium and the semiconductor (InP/InGaAsP), erbium-doped fiber amplifier (EDFA)- and RSOA-based fiber lasers exhibit different responses and regimes of stability when the FBG is subjected to dynamic strains. The responses of both systems are experimentally verified using an adaptive photorefractive two-wave mixing (TWM) spectral demodulation technique. The experimental results show that the RSOA-FBG fiber linear cavity laser is stable and can stably respond to dynamic strains at high frequencies. An example application using a multiplexed TWM interferometer to demodulate multiple FBG sensors is also discussed.

Symmetric 40-Gb/s TWDM-PON with 51-dB loss budget by using a single SOA as preamplifier, booster and format converter in ONU.

PubMed

Li, Zhengxuan; Yi, Lilin; Hu, Weisheng

2014-10-06

In this paper, we propose to use a semiconductor optical amplifier (SOA) in the optical network unit (ONU) to improve the loss budget in time and wavelength division multiplexed-passive optical network (TWDM-PON) systems. The SOA boosts the upstream signal to increase the output power of the electro-absorption modulated laser (EML) and simultaneously pre-amplifies the downstream signal for sensitivity improvement. The penalty caused by cross gain modulation (XGM) effect is negligible due to the low extinction ratio (ER) of upstream signal and the large wavelength difference between upstream and downstream links. In order to achieve a higher output power, the SOA is driven into its saturation region, where the self-phase modulation (SPM) effect converts the intensity into phase information and realizes on-off-keying (OOK) to phase-shifted-keying (PSK) format conversion. In this way, the pattern effect is eliminated, which releases the requirement of gain-clamping on SOA. To further improve the loss budget of upstream link, an Erbium doped fiber amplifier (EDFA) is used in the optical line terminal (OLT) to pre-amplify the received signal. For the downstream direction, directly modulated laser (DML) is used as the laser source. Taking advantage of its carrier-less characteristic, directly modulated signal shows high tolerance to fiber nonlinearity, which could support a downstream launch power as high as + 16 dBm per channel. In addition, the signal is pre-amplified by the SOA in ONU before being detected, so the sensitivity limitation for downstream link is also removed. As a result, a truly passive symmetric 40-Gb/s TWDM-PON was demonstrated, achieving a link loss budget of 51 dB.

Design and Performance Investigation for the Optical Combinational Networks at High Data Rate

NASA Astrophysics Data System (ADS)

Tripathi, Devendra Kr.

2017-05-01

This article explores performance study for optical combinational designs based on nonlinear characteristics with semiconductor optical amplifier (SOA). Two configurations for optical half-adder with non-return-to-zero modulation pattern altogether with Mach-Zehnder modulator, interferometer at 50-Gbps data rate have been successfully realized. Accordingly, SUM and CARRY outputs have been concurrently executed and verified for their output waveforms. Numerical simulations for variation of data rate and key design parameters have been effectively executed outcome with optimum performance. Investigations depict overall good performance of the design in terms of the extinction factor. It also inferred that all-optical realization based on SOA is competent scheme, as it circumvents costly optoelectronic translation. This could be well supportive to erect larger complex optical combinational circuits.

A Novel Approach to Realize of All Optical Frequency Encoded Dibit Based XOR and XNOR Logic Gates Using Optical Switches with Simulated Verification

NASA Astrophysics Data System (ADS)

Ghosh, B.; Hazra, S.; Haldar, N.; Roy, D.; Patra, S. N.; Swarnakar, J.; Sarkar, P. P.; Mukhopadhyay, S.

2018-03-01

Since last few decades optics has already proved its strong potentiality for conducting parallel logic, arithmetic and algebraic operations due to its super-fast speed in communication and computation. So many different logical and sequential operations using all optical frequency encoding technique have been proposed by several authors. Here, we have keened out all optical dibit representation technique, which has the advantages of high speed operation as well as reducing the bit error problem. Exploiting this phenomenon, we have proposed all optical frequency encoded dibit based XOR and XNOR logic gates using the optical switches like add/drop multiplexer (ADM) and reflected semiconductor optical amplifier (RSOA). Also the operations of these gates have been verified through proper simulation using MATLAB (R2008a).

Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers.

PubMed

Lysevych, M; Tan, H H; Karouta, F; Fu, L; Jagadish, C

2013-04-08

In this paper we report a method to overcome the limitations of gain-saturation and two-photon absorption faced by developers of high power single mode InP-based lasers and semiconductor optical amplifiers (SOA) including those based on wide-waveguide or slab-coupled optical waveguide laser (SCOWL) technology. The method is based on Y-coupling design of the laser cavity. The reduction in gain-saturation and two-photon absorption in the merged beam laser structures (MBL) are obtained by reducing the intensity of electromagnetic field in the laser cavity. Standard ridge-waveguide lasers and MBLs were fabricated, tested and compared. Despite a slightly higher threshold current, the reduced gain-saturation in MBLs results in higher output power. The MBLs also produced a single spatial mode, as well as a strongly dominating single spectral mode which is the inherent feature of MBL-type cavity.

A Fully Implemented 12 × 12 Data Vortex Optical Packet Switching Interconnection Network

NASA Astrophysics Data System (ADS)

Shacham, Assaf; Small, Benjamin A.; Liboiron-Ladouceur, Odile; Bergman, Keren

2005-10-01

A fully functional optical packet switching (OPS) interconnection network based on the data vortex architecture is presented. The photonic switching fabric uniquely capitalizes on the enormous bandwidth advantage of wavelength division multiplexing (WDM) wavelength parallelism while delivering minimal packet transit latency. Utilizing semiconductor optical amplifier (SOA)-based switching nodes and conventional fiber-optic technology, the 12-port system exhibits a capacity of nearly 1 Tb/s. Optical packets containing an eight-wavelength WDM payload with 10 Gb/s per wavelength are routed successfully to all 12 ports while maintaining a bit error rate (BER) of 10-12 or better. Median port-to-port latencies of 110 ns are achieved with a distributed deflection routing network that resolves packet contention on-the-fly without the use of optical buffers and maintains the entire payload path in the optical domain.

Novel monolithic integration scheme for high-speed electroabsorption modulators and semiconductor optical amplifiers using cascaded structure.

PubMed

Lin, Fang-Zheng; Wu, Tsu-Hsiu; Chiu, Yi-Jen

2009-06-08

A new monolithic integration scheme, namely cascaded-integration (CI), for improving high-speed optical modulation is proposed and demonstrated. High-speed electroabsorption modulators (EAMs) and semiconductor optical amplifiers (SOAs) are taken as the integrated elements of CI. This structure is based on an optical waveguide defined by cascading segmented EAMs with segmented SOAs, while high-impedance transmission lines (HITLs) are used for periodically interconnecting EAMs, forming a distributive optical re-amplification and re-modulation. Therefore, not only the optical modulation can be beneficial from SOA gain, but also high electrical reflection due to EAM low characteristic impedance can be greatly reduced. Two integration schemes, CI and conventional single-section (SS), with same total EAM- and SOA- lengths are fabricated and compared to examine the concept. Same modulation-depth against with EAM bias (up to 5V) as well as SOA injection current (up to 60mA) is found in both structures. In comparison with SS, a < 1dB extra optical-propagation loss in CI is measured due to multi-sections of electrical-isolation regions between EAMs and SOAs, suggesting no significant deterioration in CI on DC optical modulation efficiency. Lower than -12dB of electrical reflection from D.C. to 30GHz is observed in CI, better than -5dB reflection in SS for frequency of above 5GHz. Superior high-speed electrical properties in CI structure can thus lead to higher speed of electrical-to-optical (EO) response, where -3dB bandwidths are >30GHz and 13GHz for CI and SS respectively. Simulation results on electrical and EO response are quite consistent with measurement, confirming that CI can lower the driving power at high-speed regime, while the optical loss is still kept the same level. Taking such distributive advantage (CI) with optical gain, not only higher-speed modulation with high output optical power can be attained, but also the trade-off issue due to impedance mismatch can be released to reduce the driving power of modulator. Such kind of monolithic integration scheme also has potential for the applications of other high-speed optoelectronics devices.

Wideband 360 degrees microwave photonic phase shifter based on slow light in semiconductor optical amplifiers.

PubMed

Xue, Weiqi; Sales, Salvador; Capmany, José; Mørk, Jesper

2010-03-15

In this work we demonstrate for the first time, to the best of our knowledge, a continuously tunable 360 degrees microwave phase shifter spanning a microwave bandwidth of several tens of GHz (up to 40 GHz). The proposed device exploits the phenomenon of coherent population oscillations, enhanced by optical filtering, in combination with a regeneration stage realized by four-wave mixing effects. This combination provides scalability: three hybrid stages are demonstrated but the technology allows an all-integrated device. The microwave operation frequency limitations of the suggested technique, dictated by the underlying physics, are also analyzed.

Bidirectional fiber-wireless and fiber-VLLC transmission system based on an OEO-based BLS and a RSOA.

PubMed

Lu, Hai-Han; Li, Chung-Yi; Lu, Ting-Chien; Wu, Chang-Jen; Chu, Chien-An; Shiva, Ajay; Mochii, Takao

2016-02-01

A bidirectional fiber-wireless and fiber-visible-laser-light-communication (VLLC) transmission system based on an optoelectronic oscillator (OEO)-based broadband light source (BLS) and a reflective semiconductor optical amplifier (RSOA) is proposed and experimentally demonstrated. Through an in-depth observation of such bidirectional fiber-wireless and fiber-VLLC transmission systems, good bit error rate performances are obtained over a 40 km single-mode fiber and a 10 m RF/optical wireless transport. Such a bidirectional fiber-wireless and fiber-VLLC transmission system is an attractive option for providing broadband integrated services.

Cost-effective WDM-PON Delivering Up/Down-stream Data on a Single Wavelength Using Soliton Pulse

NASA Astrophysics Data System (ADS)

Tawade, Laxman

2013-06-01

This paper presents wavelength division multiplexing passive optical network (WDM-PON) system delivering downstream 2.5 Gbit/s data and upstream 1 Gbit/s data on a single wavelength using pulse source is mode locked laser which generating a single pulse of "sech" shape with specified power and width i.e. soliton pulse. The optical source for downstream data and upstream data is sech pulse generator at central office and reflective semiconductor optical amplifier (RSOA) at each optical network unit. We also investigate analysis of backscattered optical signal for upstream data and downstream data simultaneously. Bit error rate, Q-Factor were measured to demonstrate the proposed scheme. In this paper Long reach aspects of an access network is investigated using single channel scenario.

Semiconductor Based Transverse Bragg Resonance (TBR) Optical Amplifiers and Lasers

DTIC Science & Technology

2007-02-14

modes with small modal angles experience zero or very low radiation loss. We call these modes small modal angle (SMA) modes. SMA modes include both...lossless effective index-guided modes and low loss leaky modes. They are almost parallel to the graing and do not radiate significantly. As the modal...angle increases, all the modes experience higher radiation loss. However, around the transverse resonance angle of 13.80, low loss modes exist. These

Multi-level multi-thermal-electron FDTD simulation of plasmonic interaction with semiconducting gain media: applications to plasmonic amplifiers and nano-lasers.

PubMed

Chen, X; Bhola, B; Huang, Y; Ho, S T

2010-08-02

Interactions between a semiconducting gain medium and confined plasmon-polaritons are studied using a multilevel multi-thermal-electron finite-difference time-domain (MLMTE-FDTD) simulator. We investigated the amplification of wave propagating in a plasmonic metal-semiconductor-metal (MSM) waveguide filled with semiconductor gain medium and obtained the conditions required to achieve net optical gain. The MSM gain waveguide is used to form a plasmonic semiconductor nano-ring laser(PSNRL) with an effective mode volume of 0.0071 microm3, which is about an order of magnitude smaller than the smallest demonstrated integrated photonic crystal based laser cavities. The simulation shows a lasing threshold current density of 1kA/cm2 for a 300 nm outer diameter ring cavity with 80 nm-wide ring. This current density can be realistically achieved in typical III-V semiconductor, which shows the experimental feasibility of the proposed PSNRL structure.

Performance of highly connected photonic switching lossless metro-access optical networks

NASA Astrophysics Data System (ADS)

Martins, Indayara Bertoldi; Martins, Yara; Barbosa, Felipe Rudge

2018-03-01

The present work analyzes the performance of photonic switching networks, optical packet switching (OPS) and optical burst switching (OBS), in mesh topology of different sizes and configurations. The "lossless" photonic switching node is based on a semiconductor optical amplifier, demonstrated and validated with experimental results on optical power gain, noise figure, and spectral range. The network performance was evaluated through computer simulations based on parameters such as average number of hops, optical packet loss fraction, and optical transport delay (Am). The combination of these elements leads to a consistent account of performance, in terms of network traffic and packet delivery for OPS and OBS metropolitan networks. Results show that a combination of highly connected mesh topologies having an ingress e-buffer present high efficiency and throughput, with very low packet loss and low latency, ensuring fast data delivery to the final receiver.

Optics with Semiconductors: Ultrafast Physics for Devices

DTIC Science & Technology

1991-03-01

pass through a thinner (ɛÜ0 /im) saturable absorber jet of malachite green placed between the fourth and fifth passes. The saturable absorber reduces...this laser [22]. In the amplifier, the gain/absorber dye pair is SR640/ malachite green, after Knox [8]. SPli Vol 126$ Appttctiom of Ukrtshon Lssf...telescope, followed by a short tele- scope with a saturable absorber at its focus ( malachite green in a ~200 pm jet of ethylene glycol, produced by

Real-time, multiplexed electrochemical DNA detection using an active complementary metal-oxide-semiconductor biosensor array with integrated sensor electronics.

PubMed

Levine, Peter M; Gong, Ping; Levicky, Rastislav; Shepard, Kenneth L

2009-03-15

Optical biosensing based on fluorescence detection has arguably become the standard technique for quantifying extents of hybridization between surface-immobilized probes and fluorophore-labeled analyte targets in DNA microarrays. However, electrochemical detection techniques are emerging which could eliminate the need for physically bulky optical instrumentation, enabling the design of portable devices for point-of-care applications. Unlike fluorescence detection, which can function well using a passive substrate (one without integrated electronics), multiplexed electrochemical detection requires an electronically active substrate to analyze each array site and benefits from the addition of integrated electronic instrumentation to further reduce platform size and eliminate the electromagnetic interference that can result from bringing non-amplified signals off chip. We report on an active electrochemical biosensor array, constructed with a standard complementary metal-oxide-semiconductor (CMOS) technology, to perform quantitative DNA hybridization detection on chip using targets conjugated with ferrocene redox labels. A 4 x 4 array of gold working electrodes and integrated potentiostat electronics, consisting of control amplifiers and current-input analog-to-digital converters, on a custom-designed 5 mm x 3 mm CMOS chip drive redox reactions using cyclic voltammetry, sense DNA binding, and transmit digital data off chip for analysis. We demonstrate multiplexed and specific detection of DNA targets as well as real-time monitoring of hybridization, a task that is difficult, if not impossible, with traditional fluorescence-based microarrays.

Simultaneous wavelength and format conversion in SDN/NFV for flexible optical network based on FWM in SOA

NASA Astrophysics Data System (ADS)

Zhan, Yueying; Wang, Danshi; Zhang, Min

2018-04-01

We propose an all-optical wavelength and format conversion model (CM) for a dynamic data center interconnect node and coherent passive optical network (PON) optical network unit (ONU) in software-defined networking and network function virtualization system based on four-wave mixing in a semiconductor optical amplifier. Five wavelength converted DQPSK signals and two format converted DPSK signals are generated; the performances of the generated signals for two strategies of setting CM in the data center interconnect node and coherent PON ONU, which are over 10 km fiber transmission, have been verified. All of the converted signals are with a power penalty less than 2.2 dB at FEC threshold of 3.8 × 10 - 3, and the optimum bias current of SOA is 300 mA.

Bidirectional and simultaneous FTTX/Ethernet services using RSOA based remodulation and polarization multiplexing technique

NASA Astrophysics Data System (ADS)

Das, Anindya S.; Patra, Ardhendu S.

2015-08-01

A bidirectional and simultaneous transmission of Ethernet, FTTX services through single optical carrier wavelength employing polarization multiplexing technique in the transmitter end and the user end. 10 Gbps and 2.5 Gbps datarates are transmitted over 50 km single mode fiber employing POLMUX technique at OLT and ONU to provide Ethernet and FTTX services concurrently to the user. Reflective semiconductor optical amplifier is used to reuse and remodulate the downlink signal to uplink transmission. The upstream and the downstream transmission performances are observed by the bit error rate values and the eye diagrams obtained by the BER analyzer.

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

NASA Astrophysics Data System (ADS)

Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.

2014-11-01

The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, advancement in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers and optical amplifiers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting and amplifying information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Subsequent achievements for lasers and amplifiers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. We herein reviewed the1 progress of both Qdots and Qdash devices, based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance. In particular, we discussed the progress in lasers, semiconductor optical amplifiers (SOA), mode locked lasers, and superluminescent diodes, which are the building blocks of EPIC and ICT. Alternatively, these optical sources are potential candidates for other multi-disciplinary field applications.

18-THz-wide optical frequency comb emitted from monolithic passively mode-locked semiconductor quantum-well laser

NASA Astrophysics Data System (ADS)

Lo, Mu-Chieh; Guzmán, Robinson; Ali, Muhsin; Santos, Rui; Augustin, Luc; Carpintero, Guillermo

2017-10-01

We report on an optical frequency comb with 14nm (~1.8 THz) spectral bandwidth at -3 dB level that is generated using a passively mode-locked quantum-well (QW) laser in photonic integrated circuits (PICs) fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase modulators followed by an extra-cavity SOA as booster amplifier. A 1.8-THz-wide optical comb spectrum is presented with ultrafast pulse that is 0.35-ps-wide. The radio frequency beat note has a 3-dB linewidth of 450 kHz and 35-dB SNR.

All-optical reservoir computer based on saturation of absorption.

PubMed

Dejonckheere, Antoine; Duport, François; Smerieri, Anteo; Fang, Li; Oudar, Jean-Louis; Haelterman, Marc; Massar, Serge

2014-05-05

Reservoir computing is a new bio-inspired computation paradigm. It exploits a dynamical system driven by a time-dependent input to carry out computation. For efficient information processing, only a few parameters of the reservoir needs to be tuned, which makes it a promising framework for hardware implementation. Recently, electronic, opto-electronic and all-optical experimental reservoir computers were reported. In those implementations, the nonlinear response of the reservoir is provided by active devices such as optoelectronic modulators or optical amplifiers. By contrast, we propose here the first reservoir computer based on a fully passive nonlinearity, namely the saturable absorption of a semiconductor mirror. Our experimental setup constitutes an important step towards the development of ultrafast low-consumption analog computers.

Simple online recognition of optical data strings based on conservative optical logic

NASA Astrophysics Data System (ADS)

Caulfield, H. John; Shamir, Joseph; Zavalin, Andrey I.; Silberman, Enrique; Qian, Lei; Vikram, Chandra S.

2006-06-01

Optical packet switching relies on the ability of a system to recognize header information on an optical signal. Unless the headers are very short with large Hamming distances, optical correlation fails and optical logic becomes attractive because it can handle long headers with Hamming distances as low as 1. Unfortunately, the only optical logic gates fast enough to keep up with current communication speeds involve semiconductor optical amplifiers and do not lend themselves to the incorporation of large numbers of elements for header recognition and would consume a lot of power as well. The ideal system would operate at any bandwidth with no power consumption. We describe how to design and build such a system by using passive optical logic. This too leads to practical problems that we discuss. We show theoretically various ways to use optical interferometric logic for reliable recognition of long data streams such as headers in optical communication. In addition, we demonstrate one particularly simple experimental approach using interferometric coinc gates.

SiPM electro-optical detection system noise suppression method

NASA Astrophysics Data System (ADS)

Bi, Xiangli; Yang, Suhui; Hu, Tao; Song, Yiheng

2014-11-01

In this paper, the single photon detection principle of Silicon Photomultipliers (SiPM) device is introduced. The main noise factors that infect the sensitivity of the electro-optical detection system are analyzed, including background light noise, detector dark noise, preamplifier noise and signal light noise etc. The Optical, electrical and thermodynamic methods are used to suppress the SiPM electro-optical detection system noise, which improved the response sensitivity of the detector. Using SiPM optoelectronic detector with a even high sensitivity, together with small field large aperture optical system, high cutoff narrow bandwidth filters, low-noise operational amplifier circuit, the modular design of functional circuit, semiconductor refrigeration technology, greatly improved the sensitivity of optical detection system, reduced system noise and achieved long-range detection of weak laser radiation signal. Theoretical analysis and experimental results show that the proposed methods are reasonable and efficient.

Broadly tunable thin-film intereference coatings: active thin films for telecom applications

NASA Astrophysics Data System (ADS)

Domash, Lawrence H.; Ma, Eugene Y.; Lourie, Mark T.; Sharfin, Wayne F.; Wagner, Matthias

2003-06-01

Thin film interference coatings (TFIC) are the most widely used optical technology for telecom filtering, but until recently no tunable versions have been known except for mechanically rotated filters. We describe a new approach to broadly tunable TFIC components based on the thermo-optic properties of semiconductor thin films with large thermo-optic coefficients 3.6X10[-4]/K. The technology is based on amorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition (PECVD), a process adapted for telecom applications from its origins in the flat-panel display and solar cell industries. Unlike MEMS devices, tunable TFIC can be designed as sophisticated multi-cavity, multi-layer optical designs. Applications include flat-top passband filters for add-drop multiplexing, tunable dispersion compensators, tunable gain equalizers and variable optical attenuators. Extremely compact tunable devices may be integrated into modules such as optical channel monitors, tunable lasers, gain-equalized amplifiers, and tunable detectors.

A long-reach WDM passive optical network enabling broadcasting service with centralized light source

NASA Astrophysics Data System (ADS)

Liu, D.; Tang, M.; Fu, S.; Liu, D.; Shum, P.

2012-02-01

We propose a long-reach wavelength-division-multiplexed (WDM) passive optical network (PON) to provide conventional point-to-point (P2P) data and downstream broadcasting service simultaneously by superimposing, for each WDM channel, the differential-phase-shift-keying (DPSK) broadcasting signal with the subcarrier multiplexing (SCM) modulated downstream P2P signal, at the optical line terminal (OLT). In the optical network units (ONUs), by re-modulating part of the downstream signal with a reflective semiconductor optical amplifier (RSOA), we realize color-less ONUs for upstream data transmission. The proposed scheme is numerically verified with a 5 Gb/s downstream P2P signal and broadcasting services, as well as 2.5 Gb/s upstream data through a 60 km bidirectional fiber link. In particular, the influence of the downstream lightwave's optical carrier-subcarrier ratio (OCSR) on the system performance is also investigated.

Spontaneous emission in semiconductor laser amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arnaud, J.; Coste, F.; Fesqueet, J.

1985-06-01

In a mode matched configuration, spontaneous emission in semiconductor laser amplifiers is enhanced by a factor which is larger than unity but which is significantly smaller than the K-factor calculated by Petermann. Using thin-slab model, we find that in typical situations, the factor is about K/2.

Broadband tunable integrated CMOS pulser with 80-ps minimum pulse width for gain-switched semiconductor lasers.

PubMed

Chen, Shaoqiang; Diao, Shengxi; Li, Pengtao; Nakamura, Takahiro; Yoshita, Masahiro; Weng, Guoen; Hu, Xiaobo; Shi, Yanling; Liu, Yiqing; Akiyama, Hidefumi

2017-07-31

High power pulsed lasers with tunable pulse widths are highly favored in many applications. When combined with power amplification, gain-switched semiconductor lasers driven by broadband tunable electric pulsers can meet such requirements. For this reason, we designed and produced a low-cost integrated CMOS pulse generator with a minimum pulse width of 80 ps and a wide tuning range of up to 270 ns using a 40-nm microelectronic process technique. We used this pulser to drive a 1.3-µm semiconductor laser diode directly, and thereafter investigated the gain-switching properties of the laser system. The optical pulses consist of a spike followed by a steady state region. Tuning the width of the electrical pulse down to approximately 1.5 ns produces optical pulses consisting only of the spike, which has a minimum pulse-width of 100 ps. Moreover, the duration of the steady state can be tuned continuously by tuning the electrical pulse width, with a peak power of approximately 5 mW. The output voltage of the electric pulser has a tuning range of 0.8-1.5 V that can be used to directly drive semiconductor laser diodes with wavelengths in the near-infrared spectrum, which are suitable for power amplification with rare-earth doped fiber amplifiers.

Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kita, Tomohiro, E-mail: tkita@ecei.tohoku.ac.jp; Tang, Rui; Yamada, Hirohito

2015-03-16

We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range.

Silica-Based Optical Time-Shift Network.

DTIC Science & Technology

1996-03-01

consisted of semiconductor lasers and detectors, RF transfer -switches, low noise RF amplifiers (LNA), and T2L circuitries installed to enable switching...F/O TRANSFER BOX (1) RADIATING ELEMENTS 1:8 POWER DIVIDER (24 CARDS) 1.4 POWER DIVIDER (24) Tr/R MODULE (24) F/O DELAY WITH 2 TRANSFER SWITCHES AND 1...of the mode can travel is the velocity of light (= c/ni) in the outer clad, the part of it that lies beyond a critical radius Rc would not be able to

Assembling Ordered Nanorod Superstructures and Their Application as Microcavity Lasers

NASA Astrophysics Data System (ADS)

Liu, Pai; Singh, Shalini; Guo, Yina; Wang, Jian-Jun; Xu, Hongxing; Silien, Christophe; Liu, Ning; Ryan, Kevin M.

2017-03-01

Herein we report the formation of multi-layered arrays of vertically aligned and close packed semiconductor nanorods in perfect registry at a substrate using electric field assisted assembly. The collective properties of these CdSexS1-x nanorod emitters are harnessed by demonstrating a relatively low amplified spontaneous emission (ASE) threshold and a high net optical gain at medium pump intensity. The importance of order in the system is highlighted where a lower ASE threshold is observed compared to disordered samples.

CMOS direct time interval measurement of long-lived luminescence lifetimes.

PubMed

Yao, Lei; Yung, Ka Yi; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-01-01

We describe a Complementary Metal-Oxide Semiconductor (CMOS) Direct Time Interval Measurement (DTIM) Integrated Circuit (IC) to detect the decay (fall) time of the luminescence emission when analyte-sensitive luminophores are excited with an optical pulse. The CMOS DTIM IC includes 14 × 14 phototransistor array, transimpedance amplifier, regulated gain amplifier, fall time detector, and time-to-digital convertor. We examined the DTIM system to measure the emission lifetime of oxygen-sensitive luminophores tris(4,7-diphenyl-1, 10-phenanthroline) ruthenium(II) ([Ru(dpp)(3)](2+)) encapsulated in sol-gel derived xerogel thin-films. The DTIM system fabricated using TSMC 0.35 μm process functions to detect lifetimes from 4 μs to 14.4 μs but can be tuned to detect longer lifetimes. The system provides 8-bit digital output proportional to lifetimes and consumes 4.5 mW of power with 3.3 V DC supply. The CMOS system provides a useful platform for the development of reliable, robust, and miniaturized optical chemical sensors.

Continuous adaptive beam pointing and tracking for laser power transmission.

PubMed

Schäfer, Christian A

2010-06-21

The adaptive beam pointing concept has been revisited for the purpose of controlled transmission of laser energy from an optical transmitter to a target. After illumination, a bidirectional link is established by a retro-reflector on the target and an amplifier-phase conjugate mirror (A-PCM) on the transmitter. By setting the retro-reflector's aperture smaller than the diffraction limited spot size but big enough to provide sufficient amount of optical feedback, a stable link can be maintained and light that hits the retro-reflector's surrounded area can simultaneously be reconverted into usable electric energy. The phase conjugate feedback ensures that amplifier's distortions are compensated and the target tracked accurately.After deriving basic arithmetic expressions for the proposed system, a section is devoted for the motivation of free-space laser power transmission which is supposed to find varied applicability in space. As an example, power transmission from a satellite to the earth is described where recently proposed solar power generating structures on high-altitudes receive the power above the clouds to provide constant energy supply.In the experimental part, an A-PCM setup with reflectivity of about R(A-PCM) = 100 was realized using a semiconductor optical amplifier and a photorefractive self-pumped PCM. Simulation results show that a reflectivity of R(A-PCM)>1000 could be obtained by improving the self-pumped PCM's efficiency. That would lead to a transmission efficiency of eta>90%.

High-Speed Interrogation for Large-Scale Fiber Bragg Grating Sensing

PubMed Central

Hu, Chenyuan; Bai, Wei

2018-01-01

A high-speed interrogation scheme for large-scale fiber Bragg grating (FBG) sensing arrays is presented. This technique employs parallel computing and pipeline control to modulate incident light and demodulate the reflected sensing signal. One Electro-optic modulator (EOM) and one semiconductor optical amplifier (SOA) were used to generate a phase delay to filter reflected spectrum form multiple candidate FBGs with the same optical path difference (OPD). Experimental results showed that the fastest interrogation delay time for the proposed method was only about 27.2 us for a single FBG interrogation, and the system scanning period was only limited by the optical transmission delay in the sensing fiber owing to the multiple simultaneous central wavelength calculations. Furthermore, the proposed FPGA-based technique had a verified FBG wavelength demodulation stability of ±1 pm without average processing. PMID:29495263

High-Speed Interrogation for Large-Scale Fiber Bragg Grating Sensing.

PubMed

Hu, Chenyuan; Bai, Wei

2018-02-24

A high-speed interrogation scheme for large-scale fiber Bragg grating (FBG) sensing arrays is presented. This technique employs parallel computing and pipeline control to modulate incident light and demodulate the reflected sensing signal. One Electro-optic modulator (EOM) and one semiconductor optical amplifier (SOA) were used to generate a phase delay to filter reflected spectrum form multiple candidate FBGs with the same optical path difference (OPD). Experimental results showed that the fastest interrogation delay time for the proposed method was only about 27.2 us for a single FBG interrogation, and the system scanning period was only limited by the optical transmission delay in the sensing fiber owing to the multiple simultaneous central wavelength calculations. Furthermore, the proposed FPGA-based technique had a verified FBG wavelength demodulation stability of ±1 pm without average processing.

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

NASA Technical Reports Server (NTRS)

Nahra, J. J.; Bhasin, K. B.; Toncich, S. S.; Subramanyam, G.; Kapoor, V. J.

1992-01-01

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Improving upstream transmission performance using a receiver with decision threshold level adjustment in a loopback WDM-PON

NASA Astrophysics Data System (ADS)

Cho, Seung-Hyun; Lee, Sang-Soo; Shin, Dong-Wook

2010-06-01

We have experimentally demonstrated that the use of an optical receiver with decision threshold level adjustment (DTLA) improved the performance of an upstream transmission in reflective semiconductor optical amplifier (RSOA)-based loopback wavelength division multiplexing-passive optical network (WDM-PON). Even though the extinction ratio (ER) of the downstream signal was as much as 9 dB and the injection power into the RSOA at the optical network unit was about -24 dBm, we successfully obtained error-free transmission results for the upstream signal through careful control of the decision threshold value in the optical receiver located at optical line terminal (OLT). Using an optical receiver with DTLA for upstream signal detection overcame significant obstacles related to the injection power into the RSOA and the ER of the downstream signal, which were previously considered limitations of the wavelength remodulation scheme. This technique is expected to provide flexibility for the optical link design in the practical deployment of a WDM-PON.

High voltage electrical amplifier having a short rise time

DOEpatents

Christie, David J.; Dallum, Gregory E.

1991-01-01

A circuit, comprising an amplifier and a transformer is disclosed that produces a high power pulse having a fast response time, and that responds to a digital control signal applied through a digital-to-analog converter. The present invention is suitable for driving a component such as an electro-optic modulator with a voltage in the kilovolt range. The circuit is stable at high frequencies and during pulse transients, and its impedance matching circuit matches the load impedance with the output impedance. The preferred embodiment comprises an input stage compatible with high-speed semiconductor components for amplifying the voltage of the input control signal, a buffer for isolating the input stage from the output stage; and a plurality of current amplifiers connected to the buffer. Each current amplifier is connected to a field effect transistor (FET), which switches a high voltage power supply to a transformer which then provides an output terminal for driving a load. The transformer comprises a plurality of transmission lines connected to the FETs and the load. The transformer changes the impedance and voltage of the output. The preferred embodiment also comprises a low voltage power supply for biasing the FETs at or near an operational voltage.

Continuous-wave, single-frequency 229  nm laser source for laser cooling of cadmium atoms.

PubMed

Kaneda, Yushi; Yarborough, J M; Merzlyak, Yevgeny; Yamaguchi, Atsushi; Hayashida, Keitaro; Ohmae, Noriaki; Katori, Hidetoshi

2016-02-15

Continuous-wave output at 229 nm for the application of laser cooling of Cd atoms was generated by the fourth harmonic using two successive second-harmonic generation stages. Employing a single-frequency optically pumped semiconductor laser as a fundamental source, 0.56 W of output at 229 nm was observed with a 10-mm long, Brewster-cut BBO crystal in an external cavity with 1.62 W of 458 nm input. Conversion efficiency from 458 nm to 229 nm was more than 34%. By applying a tapered amplifier (TA) as a fundamental source, we demonstrated magneto-optical trapping of all stable Cd isotopes including isotopes Cd111 and Cd113, which are applicable to optical lattice clocks.

Micro ring cavity resonator incorporating total internal reflection mirrors

NASA Astrophysics Data System (ADS)

Kim, Doo Gun; Choi, Woon Kyung; Choi, Young Wan; Yi, Jong Chang; Chung, Youngchul; Dagli, Nadir

2007-02-01

We investigate the properties of a multimode-interference (MMI) coupled micro ring cavity resonator with total-internal-reflection (TIR) mirrors and a semiconductor optical amplifier (SOA). The TIR mirrors were fabricated by the self-aligned process with a loss of 0.7 dB per mirror. The length and width of an MMI are 142 μm and 10 μm, respectively. The resulting free spectral range (FSR) of the resonator was approximately 1.698 nm near 1571 nm and the extinction ratio was about 17 dB. These devices might be useful as optical switching and add-drop filters in a photonic integrated circuit or as small and fast resonator devices.

Ring-resonator-integrated tunable external cavity laser employing EAM and SOA.

PubMed

Yoon, Ki-Hong; Kwon, O-Kyun; Kim, Ki Soo; Choi, Byung-Seok; Oh, Su Hwan; Kim, Hyun Su; Sim, Jae-Sik; Kim, Chul Soo

2011-12-05

We propose and demonstrate a tunable external cavity laser (ECL) composed of a polymer Bragg reflector (PBR) and integrated gain chip with gain, a ring resonator, an electro-absorption modulator (EAM), and a semiconductor optical amplifier (SOA). The cavity of the laser is composed of the PBR, gain, and ring resonator. The ring resonator reflects the predetermined wavelengths into the gain region and transmits the output signal into integrated devices such as the EAM and SOA. The output wavelength of the tunable laser is discretely tuned in steps of about 0.8 nm through the thermal-optic effect of the PBR and predetermined mode spacing of the ring resonator.

Wired/wireless access integrated RoF-PON with scalable generation of multi-frequency MMWs enabled by polarization multiplexed FWM in SOA.

PubMed

Xiang, Yu; Chen, Chen; Zhang, Chongfu; Qiu, Kun

2013-01-14

In this paper, we propose and demonstrate a novel integrated radio-over-fiber passive optical network (RoF-PON) system for both wired and wireless access. By utilizing the polarization multiplexed four-wave mixing (FWM) effect in a semiconductor optical amplifier (SOA), scalable generation of multi-frequency millimeter-waves (MMWs) can be provided so as to assist the configuration of multi-frequency wireless access for the wire/wireless access integrated ROF-PON system. In order to obtain a better performance, the polarization multiplexed FWM effect is investigated in detail. Simulation results successfully verify the feasibility of our proposed scheme.

Impact of fiber ring laser configuration on detection capabilities in FBG based sensor systems

NASA Astrophysics Data System (ADS)

Osuch, Tomasz; Kossek, Tomasz; Markowski, Konrad

2014-11-01

In this paper fiber ring lasers (FRL) as interrogation units for distributed fiber Bragg grating (FBG) based sensor networks are studied. In particular, two configurations of the fiber laser with erbium-doped fiber amplifier (EDFA) and semiconductor optical amplifier (SOA) as gain medium were analyzed. In the case of EDFA-based fiber interrogation systems, CW as well as active-mode locking operation were taken into account. The influence of spectral overlapping of FBGs spectra on detection capabilities of examined FRLs are presented. Experimental results show that the SOA-based fiber laser interrogation unit can operate as a multi-parametric sensing system. In turn, using an actively mode-locked fiber ring laser with an EDFA, an electronically switchable FBG based sensing system can be realized.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Study on the capability of four-level partial response equalization in RSOA-based WDM-PON

NASA Astrophysics Data System (ADS)

Guo, Qi; Tran, An Vu

2010-12-01

The expected development of advanced video services with HDTV quality demands the delivery of more than Gb/s link to end users across the last mile connection. Future access networks are also required to have long reach for reduction in the number of central offices (CO). Fueled by those requirements, we propose a novel equalization scheme that increases the capacity and reach of the wavelength division multiplexing passive optical network (WDM-PON) based on a low bandwidth reflective semiconductor optical amplifier (RSOA). We investigate the characteristics of 10 Gb/s upstream transmission in WDM-PON using RSOA with only 1.2 GHz electrical bandwidth and various lengths of fiber. It is proven that the proposed four-level partial response equalizer (PRE) is capable of mitigating the impact of ISI in the received signals from optical network units (ONU) located 0 km to 75 km away from the optical line terminal (OLT).

A MHz speed wavelength sweeping for ultra-high speed FBG interrogation

NASA Astrophysics Data System (ADS)

Kim, Gyeong Hun; Lee, Hwi Don; Eom, Tae Joong; Jeong, Myung Yung; Kim, Chang-Seok

2015-09-01

We demonstrated a MHz speed wavelength-swept fiber laser based on the active mode locking (AML) technique and applied to interrogation system of an array of fiber Bragg grating (FBG) sensors. MHz speed wavelength sweeping of wavelength-swept fiber laser can be obtained by programmable frequency modulation of the semiconductor optical amplifier (SOA) without any wavelength tunable filter. Both static and dynamic strain measurement of FBG sensors were successfully characterized with high linearity of an R-square value of 0.9999 at sweeping speed of 50 kHz.

Stable L-band multi-wavelength SOA fiber laser based on polarization rotation.

PubMed

Liu, Tonghui; Jia, Dongfang; Yang, Tianxin; Wang, Zhaoying; Liu, Ying

2017-04-01

We propose and experimentally demonstrate a stable multi-wavelength fiber ring laser operating in the L-band with wavelength spacing of 25 GHz. The mechanism is induced by a polarization rotation intensity equalizer consisting of a semiconductor optical amplifier and polarization devices. A Fabry-Perot filter is inserted into the cavity to serve as a multi-wavelength selection device. Stable L-band multi-wavelength lasing with 3 dB uniformity of 21.2 nm, and simultaneous oscillation of 101 lines with wavelength spacing of 25 GHz, is obtained.

Quantum dot SOA/silicon external cavity multi-wavelength laser.

PubMed

Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

2015-02-23

We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

Tunable multiwavelength SOA fiber laser with ultra-narrow wavelength spacing based on nonlinear polarization rotation.

PubMed

Zhang, Zuxing; Wu, Jian; Xu, Kun; Hong, Xiaobin; Lin, Jintong

2009-09-14

A tunable multiwavelength fiber laser with ultra-narrow wavelength spacing and large wavelength number using a semiconductor optical amplifier (SOA) has been demonstrated. Intensity-dependent transmission induced by nonlinear polarization rotation in the SOA accounts for stable multiwavelength operation with wavelength spacing less than the homogenous broadening linewidth of the SOA. Stable multiwavelength lasing with wavelength spacing as small as 0.08 nm and wavelength number up to 126 is achieved at room temperature. Moreover, wavelength tuning of 20.2 nm is implemented via polarization tuning.

Design of hybrid laser structures with QD-RSOA and silicon photonic mirrors

NASA Astrophysics Data System (ADS)

Gioannini, Mariangela; Benedetti, Alessio; Bardella, Paolo; Bovington, Jock; Traverso, Matt; Siriani, Dominic; Gothoskar, Prakash

2018-02-01

We compare the design of three different single mode laser structures consisting in a Reflective Semiconductor Optical Amplifier coupled to a silicon photonic external cavity mirror. The three designs differ for the mirror structure and are compared in terms of SOA power consumption and side mode suppression ratio (SMSR). Assuming then a Quantum Dot active material, we simulate the best laser design using a numerical model that includes the peculiar physical characteristics of the QD gain medium. The simulated QD laser CW characteristics are shown and discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akparov, V V; Dmitriev, Valentin G; Duraev, V P

A semiconductor ring laser (SRL) with a radiation wavelength of 1540 nm and a fibre ring cavity is developed and studied in several main lasing regimes. An SRL design based on a semiconductor optical travelling-wave amplifier and a ring cavity, composed of a single-mode polarisation-maintaining fibre, is considered. The SRL is studied in the regime of a rotation speed sensor, in which the frequency shift of counterpropagating waves in the SRL is proportional to its rotation speed. The minimum rotation speed that can be detected using the SRL under consideration depends on the cavity length; in our experiment it turnedmore » to be 1deg s{sup -1}. The changes in the threshold current, emission spectrum, and fundamental radiation wavelength upon closing and opening the SRL ring cavity and with a change in its radius are also investigated. (lasers)« less

Swept source optical coherence tomography using an all-fiber 1300-nm ring laser source.

PubMed

Choma, Michael A; Hsu, Kevin; Izatt, Joseph A

2005-01-01

The increased sensitivity of spectral domain optical coherence tomography (OCT) has driven the development of a new generation of technologies in OCT, including rapidly tunable, broad bandwidth swept laser sources and spectral domain OCT interferometer topologies. In this work, the operation of a turnkey 1300-nm swept laser source is demonstrated. This source has a fiber ring cavity with a semiconductor optical amplifier gain medium. Intracavity mode selection is achieved with an in-fiber tunable fiber Fabry-Perot filter. A novel optoelectronic technique that allows for even sampling of the swept source OCT signal in k space also is described. A differential swept source OCT system is presented, and images of in vivo human cornea and skin are presented. Lastly, the effects of analog-to-digital converter aliasing on image quality in swept source OCT are discussed.

Optoelectronics components and technology for optical networking in China: recent progress and future trends

NASA Astrophysics Data System (ADS)

Jiang, Shan; Liu, Shuihua

2004-04-01

Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.

Effect of parameters in moving average method for event detection enhancement using phase sensitive OTDR

NASA Astrophysics Data System (ADS)

Kwon, Yong-Seok; Naeem, Khurram; Jeon, Min Yong; Kwon, Il-bum

2017-04-01

We analyze the relations of parameters in moving average method to enhance the event detectability of phase sensitive optical time domain reflectometer (OTDR). If the external events have unique frequency of vibration, then the control parameters of moving average method should be optimized in order to detect these events efficiently. A phase sensitive OTDR was implemented by a pulsed light source, which is composed of a laser diode, a semiconductor optical amplifier, an erbium-doped fiber amplifier, a fiber Bragg grating filter, and a light receiving part, which has a photo-detector and high speed data acquisition system. The moving average method is operated with the control parameters: total number of raw traces, M, number of averaged traces, N, and step size of moving, n. The raw traces are obtained by the phase sensitive OTDR with sound signals generated by a speaker. Using these trace data, the relation of the control parameters is analyzed. In the result, if the event signal has one frequency, then the optimal values of N, n are existed to detect the event efficiently.

Design and performance of 10-Gb/s L-band REAM-SOA for OLT Transmitter in next generation access networks.

PubMed

Lee, Dong-Hun; Jeong, Jong Sool; Kim, Ki-Soo; Kim, Hyun-Soo; Kim, Dong Churl; Park, Mi-Ran; Han, Yong-Tak; Kwon, Oh Kee; Kwon, O-Kyun

2015-02-09

We present a 10-Gb/s L-band reflective electro-absorption modulator integrated with a semiconductor optical amplifier (REAM-SOA) having improved transmission performance at very low input power of seed light. To decrease the input power of seed light, the absorption characteristics of the REAM are adjusted to reduce the amplified spontaneous emission light returned into the SOA, suppressing the gain saturation effect of the SOA. At a considerably low input power of -16 dBm, the REAM-SOA exhibits a low transmission penalty of about 1.2 dB after 50-km SMF transmission. Over a wide input power range from -16 dBm to 5 dBm, a penalty of less than 1.6 dB is achieved at 50-km transmission.

High-bandwidth generation of duobinary and alternate-mark-inversion modulation formats using SOA-based signal processing.

PubMed

Dailey, James M; Power, Mark J; Webb, Roderick P; Manning, Robert J

2011-12-19

We report on the novel all-optical generation of duobinary (DB) and alternate-mark-inversion (AMI) modulation formats at 42.6 Gb/s from an input on-off keyed signal. The modulation converter consists of two semiconductor optical amplifier (SOA)-based Mach-Zehnder interferometer gates. A detailed SOA model numerically confirms the operational principles and experimental data shows successful AMI and DB conversion at 42.6 Gb/s. We also predict that the operational bandwidth can be extended beyond 40 Gb/s by utilizing a new pattern-effect suppression scheme, and demonstrate dramatic reductions in patterning up to 160 Gb/s. We show an increasing trade-off between pattern-effect reduction and mean output power with increasing bitrate.

Optical orientation in ferromagnet/semiconductor hybrids

NASA Astrophysics Data System (ADS)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Integrated-circuit balanced parametric amplifier

NASA Technical Reports Server (NTRS)

Dickens, L. E.

1975-01-01

Amplifier, fabricated on single dielectric substrate, has pair of Schottky barrier varactor diodes mounted on single semiconductor chip. Circuit includes microstrip transmission line and slot line section to conduct signals. Main features of amplifier are reduced noise output and low production cost.

Extended Characterization of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

2013-01-01

Collected data for both common-source and common-gate amplifiers is presented in this paper. Characterizations of the two amplifier circuits using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed with wider input frequency ranges and varying device sizes compared to earlier characterizations. The effects of the ferroelectric layer's capacitance and variation load, quiescent point, or input signal on each circuit are discussed. Comparisons between the MFSFET and MOSFET circuit operation and performance are discussed at length as well as applications and advantages for the MFSFETs.

Superconducting active impedance converter

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Martens, Jon S.

1993-01-01

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductor allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology.

Radar signal transmission and switching over optical networks

NASA Astrophysics Data System (ADS)

Esmail, Maged A.; Ragheb, Amr; Seleem, Hussein; Fathallah, Habib; Alshebeili, Saleh

2018-03-01

In this paper, we experimentally demonstrate a radar signal distribution over optical networks. The use of fiber enables us to distribute radar signals to distant sites with a low power loss. Moreover, fiber networks can reduce the radar system cost, by sharing precise and expensive radar signal generation and processing equipment. In order to overcome the bandwidth challenges in electrical switches, a semiconductor optical amplifier (SOA) is used as an all-optical device for wavelength conversion to the desired port (or channel) of a wavelength division multiplexing (WDM) network. Moreover, the effect of chromatic dispersion in double sideband (DSB) signals is combated by generating optical single sideband (OSSB) signals. The optimal values of the SOA device parameters required to generate an OSSB with a high sideband suppression ratio (SSR) are determined. We considered various parameters such as injection current, pump power, and probe power. In addition, the effect of signal wavelength conversion and transmission over fiber are studied in terms of signal dynamic range.

Suppression of Rayleigh backscattering noise using cascaded-SOA and microwave photonic filter for 10 Gb/s loop-back WDM-PON.

PubMed

Feng, Hanlin; Ge, Jia; Xiao, Shilin; Fok, Mable P

2014-05-19

In this paper, we present a novel Rayleigh backscattering (RB) noise mitigation scheme based on central carrier suppression for 10 Gb/s loop-back wavelength division multiplexing passive optical network (WDM-PON). Microwave modulated multi-subcarrier optical signal is used as downstream seeding light, while cascaded semiconductor optical amplifier (SOA) are used in the optical network unit (ONU) for suppressing the central carrier of the multi-subcarrier upstream signal. With central carrier suppression, interference generated by carrier RB noise at low frequency region is eliminated successfully. Transmission performance over 45 km single mode fiber (SMF) is studied experimentally, and the optical-signal-to-Rayleigh-noise-ratio (OSRNR) can be reduced to 15 dB with central carrier suppression ratio (CCSR) of 21 dB. Receiver sensitivity is further improved by 6 dB with the use of microwave photonic filter (MPF) for suppressing residual upstream microwave signal and residual carrier RB at high frequency region.

Asymmetric photon transport in organic semiconductor nanowires through electrically controlled exciton diffusion

PubMed Central

Cui, Qiu Hong; Peng, Qian; Luo, Yi; Jiang, Yuqian; Yan, Yongli; Wei, Cong; Shuai, Zhigang; Sun, Cheng; Yao, Jiannian; Zhao, Yong Sheng

2018-01-01

The ability to steer the flow of light toward desired propagation directions is critically important for the realization of key functionalities in optical communication and information processing. Although various schemes have been proposed for this purpose, the lack of capability to incorporate an external electric field to effectively tune the light propagation has severely limited the on-chip integration of photonics and electronics. Because of the noninteractive nature of photons, it is only possible to electrically control the flow of light by modifying the refractive index of materials through the electro-optic effect. However, the weak optical effects need to be strongly amplified for practical applications in high-density photonic integrations. We show a new strategy that takes advantage of the strong exciton-photon coupling in active waveguides to effectively manipulate photon transport by controlling the interaction between excitons and the external electric field. Single-crystal organic semiconductor nanowires were used to generate highly stable Frenkel exciton polaritons with strong binding and diffusion abilities. By making use of directional exciton diffusion in an external electric field, we have realized an electrically driven asymmetric photon transport and thus directional light propagation in a single nanowire. With this new concept, we constructed a dual-output single wire–based device to build an electrically controlled single-pole double-throw optical switch with fast temporal response and high switching frequency. Our findings may lead to the innovation of concepts and device architectures for optical information processing. PMID:29556529

Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Islamova, Elmira; Merget, Florian; Witzens, Jeremy

2017-09-20

Based on the single channel characterization of a Silicon Photonics (SiP) transceiver with Semiconductor Optical Amplifier (SOA) and semiconductor Mode-Locked Laser (MLL), we evaluate the optical power budget of a corresponding Wavelength Division Multiplexed (WDM) link in which penalties associated to multi-channel operation and the management of polarization diversity are introduced. In particular, channel cross-talk as well as Cross Gain Modulation (XGM) and Four Wave Mixing (FWM) inside the SOA are taken into account. Based on these link budget models, the technology is expected to support up to 12 multiplexed channels without channel pre-emphasis or equalization. Forward Error Correction (FEC) does not appear to be required at 14 Gbps if the SOA is maintained at 25 °C and MLL-to-SiP as well as SiP-to-SOA interface losses can be maintained below 3 dB. In semi-cooled operation with an SOA temperature below 55 °C, multi-channel operation is expected to be compatible with standard 802.3bj Reed-Solomon FEC at 14 Gbps provided interface losses are maintained below 4.5 dB. With these interface losses and some improvements to the Transmitter (Tx) and Receiver (Rx) electronics, 25 Gbps multi-channel operation is expected to be compatible with 7% overhead hard decision FEC.

Comparison of distributed Bragg reflector ridge waveguide diode lasers and monolithic master oscillator power amplifiers

NASA Astrophysics Data System (ADS)

Werner, Nils; Wegemund, Jan; Gerke, Sebastian; Feise, David; Bugge, Frank; Paschke, Katrin; Tränkle, Günther

2018-02-01

Diode lasers with ridge waveguide structures and wavelength stabilization by a distributed Bragg-reflector (DBR) are key components for many different applications. These lasers provide diffraction limited laser emission in a single spectral mode, while an arbitrary emission wavelength can be chosen as long as the semiconductor allows for amplification. Furthermore, the DBR grating can be fabricated during the lateral structuring of the device which makes them well suited for mass production. A variety of different concepts can be used for the actual realization of the laser. While standard DBR ridge waveguide lasers (DBR-RWL) with a DBR as reflection grating provide up to 1W optical output power, the DBR can be also used as transmission grating for improved efficiency. Furthermore, more complex structures like monolithic master oscillator power amplifiers (MOPA), which show less spectral mode hops than DBR-RWLs, have been fabricated. The wide range of possible applications have different requirements on the emission characteristic of the used lasers. While the lasers can fulfill the requirements on the emission spectrum and the optical output power, the effects due to optical feedback from optical elements of the setup may limit their practical use in the respective application. Thus, it is of high importance to analyze the emission behavior of the different laser designs at various operation conditions with and without optical feedback. Here, the detailed investigation of the emission characteristics of lasers at an exemplary emission wavelength of 1120 nm is be presented.

Design of frequency-encoded data-based optical master-slave-JK flip-flop using polarization switch

NASA Astrophysics Data System (ADS)

Mandal, Sumana; Mandal, Dhoumendra; Mandal, Mrinal Kanti; Garai, Sisir Kumar

2017-06-01

An optical data processing and communication system provides enormous potential bandwidth and a very high processing speed, and it can fulfill the demands of the present generation. For an optical computing system, several data processing units that work in the optical domain are essential. Memory elements are undoubtedly essential to storing any information. Optical flip-flops can store one bit of optical information. From these flip-flop registers, counters can be developed. Here, the authors proposed an optical master-slave (MS)-JK flip-flop with the help of two-input and three-input optical NAND gates. Optical NAND gates have been developed using semiconductor optical amplifiers (SOAs). The nonlinear polarization switching property of an SOA has been exploited here, and it acts as a polarization switch in the proposed scheme. A frequency encoding technique is adopted for representing data. A specific frequency of an optical signal represents a binary data bit. This technique of data representation is helpful because frequency is the fundamental property of a signal, and it remains unaltered during reflection, refraction, absorption, etc. throughout the data propagation. The simulated results enhance the admissibility of the scheme.

Radiation detection system using semiconductor detector with differential carrier trapping and mobility

DOEpatents

Whited, Richard C.

1981-01-01

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

Applications of ultrashort laser pulses in science and technology; Proceedings of the Meeting, The Hague, Netherlands, Mar. 12, 13, 1990

NASA Technical Reports Server (NTRS)

Antonetti, Andre (Editor)

1990-01-01

Topics discussed are on the generation of high-intensity femtosecond lasers, the high-repetition and infrared femtosecond pulses, and physics of semiconductors and applications. Papers are presented on the femtosecond pulse generation at 193 nm; the generation of intense subpicosecond and femtosecond pulses; intense tunable subpicosecond and femtosecond pulses in the visible and infrared, generated by optical parametric oscillators; a high-efficiency high-energy optical amplifier for femtosecond pulses; and the generation of solitons, periodic pulsing, and nonlinearities in GaAs. Other papers are on ultrafast relaxation dynamics of photoexcited carriers in GaAs, high-order optical nonlinear susceptibilities of transparent glasses, subnanosecond risetime high-power pulse generation using photoconductive bulk GaAs devices, femtosecond studies of plasma formation in crystalline and amorphous silicon, and subpicosecond dynamics of hot carrier relaxation in InP and GaAs.

A WDM-PON with DPSK modulated downstream and OOK modulated upstream signals based on symmetric 10 Gbit/s wavelength reused bidirectional reflective SOA

NASA Astrophysics Data System (ADS)

El-Nahal, Fady I.

2017-01-01

We investigate a wavelength-division-multiplexing passive optical network (WDM-PON) with centralized lightwave and direct detection. The system is demonstrated for symmetric 10 Gbit/s differential phase-shift keying (DPSK) downstream signals and on-off keying (OOK) upstream signals, respectively. A wavelength reused scheme is employed to carry the upstream data by using a reflective semiconductor optical amplifier (RSOA) as an intensity modulator at the optical network unit (ONU). The constant-intensity property of the DPSK modulation format can keep high extinction ratio ( ER) of downstream signal and reduce the crosstalk to the upstream signal. The bit error rate ( BER) performance of our scheme shows that the proposed 10 Gbit/s symmetric WDM-PON can achieve error free transmission over 25-km-long fiber transmission with low power penalty.

Single SOA based simultaneous amplitude regeneration for WDM-PDM RZ-PSK signals.

PubMed

Wu, Wenhan; Yu, Yu; Zou, Bingrong; Yang, Weili; Zhang, Xinliang

2013-03-25

We propose and demonstrate all-optical amplitude regeneration for the wavelength division multiplexing and polarization division multiplexing (WDM-PDM) return-to-zero phase shift keying (RZ-PSK) signals using a single semiconductor optical amplifier (SOA) and subsequent filtering. The regeneration is based on the cross phase modulation (XPM) effect in the saturated SOA and the subsequent narrow filtering. The spectrum of the distorted signal can be broadened due to the phase modulation induced by the synchronous optical clock signal. A narrow band pass filter is utilized to extract part of the broadened spectrum and remove the amplitude noise, while preserving the phase information. The working principle for multi-channel and polarization orthogonality preserving is analyzed. 4-channel dual polarization signals can be simultaneously amplitude regenerated without introducing wavelength and polarization demultiplexing. An average power penalty improvement of 1.75dB can be achieved for the WDM-PDM signals.

Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Komolibus, Katarzyna; Tyndall National Institute, University College Cork, Cork T12 R5CP; Piwonski, Tomasz, E-mail: tomasz.piwonski@tyndall.ie

The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the “dynamical” linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the α-factor due to increased differential gain.

Experimental demonstration of monolithically integrated 16 channel DFB laser array fabricated by nanoimprint lithography with AWG multiplexer and SOA for WDM-PON application

NASA Astrophysics Data System (ADS)

Zhao, Jianyi; Chen, Xin; Zhou, Ning; Huang, Xiaodong; Cao, Mingde; Wang, Lei; Liu, Wen

2015-03-01

A 16-channel monolithically integrated distributed feedback (DFB) laser array with arrayed waveguide gratings (AWGs) multiplexer and semiconductor optical amplifier (SOA) has been fabricated using nanoimprint technology. Selective lasing wavelength with 200 GHz frequency space has been obtained. The typical threshold current is between 20 mA and 30 mA. The output power is higher than 1 mW with 350 mA current in SOA. The side mode suppression ratio (SMSR) of the spectrum is better than 40 dB.

Photonic generation of ultra-wideband signals by direct current modulation on SOA section of an SOA-integrated SGDBR laser.

PubMed

Lv, Hui; Yu, Yonglin; Shu, Tan; Huang, Dexiu; Jiang, Shan; Barry, Liam P

2010-03-29

Photonic ultra-wideband (UWB) pulses are generated by direct current modulation of a semiconductor optical amplifier (SOA) section of an SOA-integrated sampled grating distributed Bragg reflector (SGDBR) laser. Modulation responses of the SOA section of the laser are first simulated with a microwave equivalent circuit model. Simulated results show a resonance behavior indicating the possibility to generate UWB signals with complex shapes in the time domain. The UWB pulse generation is then experimentally demonstrated for different selected wavelength channels with an SOA-integrated SGDBR laser.

Superconducting active impedance converter

DOEpatents

Ginley, D.S.; Hietala, V.M.; Martens, J.S.

1993-11-16

A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductors allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology. 12 figures.

Hybrid chirped pulse amplification system

DOEpatents

Barty, Christopher P.; Jovanovic, Igor

2005-03-29

A hybrid chirped pulse amplification system wherein a short-pulse oscillator generates an oscillator pulse. The oscillator pulse is stretched to produce a stretched oscillator seed pulse. A pump laser generates a pump laser pulse. The stretched oscillator seed pulse and the pump laser pulse are directed into an optical parametric amplifier producing an optical parametric amplifier output amplified signal pulse and an optical parametric amplifier output unconverted pump pulse. The optical parametric amplifier output amplified signal pulse and the optical parametric amplifier output laser pulse are directed into a laser amplifier producing a laser amplifier output pulse. The laser amplifier output pulse is compressed to produce a recompressed hybrid chirped pulse amplification pulse.

Characterization of a FBG sensor interrogation system based on a mode-locked laser scheme.

PubMed

Madrigal, Javier; Fraile-Peláez, Francisco Javier; Zheng, Di; Barrera, David; Sales, Salvador

2017-10-02

This paper is focused on the characterization of a fiber Bragg grating (FBG) sensor interrogation system based on a fiber ring laser with a semiconductor optical amplifier as the gain medium, and an in-loop electro-optical modulator. This system operates as a switchable active (pulsed) mode-locked laser. The operation principle of the system is explained theoretically and validated experimentally. The ability of the system to interrogate an array of different FBGs in wavelength and spatial domain is demonstrated. Simultaneously, the influence of several important parameters on the performance of the interrogation technique has been investigated. Specifically, the effects of the bandwidth and the reflectivity of the FBGs, the SOA gain, and the depth of the intensity modulation have been addressed.

Full colorless transmission of millimeter-wave band gigabit data over WDM-PON using sideband routing

NASA Astrophysics Data System (ADS)

Won, Yong-Yuk; Kim, Hyun-Seung; Son, Yong-Hwan; Han, Sang-Kook

2011-12-01

A new wavelength division multiplexed-radio over fiber (WDM-RoF) access network scheme supporting the simultaneous transmission of a 1.25-Gb/s wired data as well as a 1.25-Gb/s wireless data is proposed in this paper. An optical carrier suppression effect and sideband routing using the multiplexing of arrayed waveguide grating (AWG) with 50-GHz channel spacing are utilized to generate a millimeter wave band carrier. These techniques make the proposed architecture transmit both a wired data and a wireless one at the same time. A reflective semiconductor optical amplifier (RSOA) is employed at both central office and base station so that this architecture is operated colorlessly. Error free transmissions (BER of 10-9) of both downlink and uplink are achieved simultaneously.

WGM-Based Photonic Local Oscillators and Modulators

NASA Technical Reports Server (NTRS)

Matsko, Andrey; Maleki, Lute; Iltchenko, Vladimir; Savchenkov, Anatoliy

2007-01-01

Photonic local oscillators and modulators that include whispering-gallery mode (WGM) optical resonators have been proposed as power-efficient devices for generating and detecting radiation at frequencies of the order of a terahertz. These devices are intended especially to satisfy anticipated needs for receivers capable of detecting lowpower, narrow-band terahertz signals to be used for sensing substances of interest in scientific and military applications. At present, available terahertz-signal detectors are power-inefficient and do not afford the spectral and amplitude resolution needed for detecting such signals. The proposed devices would not be designed according to the conventional approach of direct detection of terahertz radiation. Instead, terahertz radiation would first be up-converted into the optical domain, wherein signals could be processed efficiently by photonic means and detected by optical photodetectors, which are more efficient than are photodetectors used in conventional direct detection of terahertz radiation. The photonic devices used to effect the up-conversion would include a tunable optical local oscillator and a novel electro-optical modulator. A local oscillator according to the proposal would be a WGM-based modelocked laser operating at a desired pulserepetition rate of the order of a terahertz. The oscillator would include a terahertz optical filter based on a WGM microresonator, a fiber-optic delay line, an optical amplifier (which could be either a semiconductor optical amplifier or an erbium-doped optical fiberamplifier), and a WGM Ka-band modulator. The terahertz repetition rate would be obtained through harmonic mode locking: for example, by modulating the light at a frequency of 33 GHz and locking each 33d optical mode, one would create a 1.089-THz pulse train. The high resonance quality factors (Q values) of WGM optical resonators should make it possible to decrease signal-generation threshold power levels significantly below those of other optical-signal-generation devices.

Quantum state reconstruction and photon number statistics for low dimensional semiconductor opto-electronic devices

NASA Astrophysics Data System (ADS)

Böhm, Fabian; Grosse, Nicolai B.; Kolarczik, Mirco; Herzog, Bastian; Achtstein, Alexander; Owschimikow, Nina; Woggon, Ulrike

2017-09-01

Quantum state tomography and the reconstruction of the photon number distribution are techniques to extract the properties of a light field from measurements of its mean and fluctuations. These techniques are particularly useful when dealing with macroscopic or mesoscopic systems, where a description limited to the second order autocorrelation soon becomes inadequate. In particular, the emission of nonclassical light is expected from mesoscopic quantum dot systems strongly coupled to a cavity or in systems with large optical nonlinearities. We analyze the emission of a quantum dot-semiconductor optical amplifier system by quantifying the modifications of a femtosecond laser pulse propagating through the device. Using a balanced detection scheme in a self-heterodyning setup, we achieve precise measurements of the quadrature components and their fluctuations at the quantum noise limit1. We resolve the photon number distribution and the thermal-to-coherent evolution in the photon statistics of the emission. The interferometric detection achieves a high sensitivity in the few photon limit. From our data, we can also reconstruct the second order autocorrelation function with higher precision and time resolution compared with classical Hanbury Brown-Twiss experiments.

A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. II. Spatio-temporal dynamics

NASA Astrophysics Data System (ADS)

Böhringer, Klaus; Hess, Ortwin

The spatio-temporal dynamics of novel semiconductor lasers is discussed on the basis of a space- and momentum-dependent full time-domain approach. To this means the space-, time-, and momentum-dependent Full-Time Domain Maxwell Semiconductor Bloch equations, derived and discussed in our preceding paper I [K. Böhringer, O. Hess, A full time-domain approach to spatio-temporal dynamics of semiconductor lasers. I. Theoretical formulation], are solved by direct numerical integration. Focussing on the device physics of novel semiconductor lasers that profit, in particular, from recent advances in nanoscience and nanotechnology, we discuss the examples of photonic band edge surface emitting lasers (PBE-SEL) and semiconductor disc lasers (SDLs). It is demonstrated that photonic crystal effects can be obtained for finite crystal structures, and leading to a significant improvement in laser performance such as reduced lasing thresholds. In SDLs, a modern device concept designed to increase the power output of surface-emitters in combination with near-diffraction-limited beam quality, we explore the complex interplay between the intracavity optical fields and the quantum well gain material in SDL structures. Our simulations reveal the dynamical balance between carrier generation due to pumping into high energy states, momentum relaxation of carriers, and stimulated recombination from states near the band edge. Our full time-domain approach is shown to also be an excellent framework for the modelling of the interaction of high-intensity femtosecond and picosecond pulses with semiconductor nanostructures. It is demonstrated that group velocity dispersion, dynamical gain saturation and fast self-phase modulation (SPM) are the main causes for the induced changes and asymmetries in the amplified pulse shape and spectrum of an ultrashort high-intensity pulse. We attest that the time constants of the intraband scattering processes are critical to gain recovery. Moreover, we present new insight into the physics of nonlinear coherent pulse propagation phenomena in active (semiconductor) gain media. Our numerical full time-domain simulations are shown to generally agree well with analytical predictions, while in the case of optical pulses with large pulse areas or few-cycle pulses they reveal the limits of analytic approaches. Finally, it is demonstrated that coherent ultrafast nonlinear propagation effects become less distinctive if we apply a realistic model of the quantum well semiconductor gain material, consider characteristic loss channels and take into account de-phasing processes and homogeneous broadening.

Polarographic carbon dioxide transducer amplifier

NASA Technical Reports Server (NTRS)

Stillman, G.

1971-01-01

Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability. Thermistor in feedback loop provides temperature compensation for large drifts in the sensor.

Gated frequency-resolved optical imaging with an optical parametric amplifier

DOEpatents

Cameron, S.M.; Bliss, D.E.; Kimmel, M.W.; Neal, D.R.

1999-08-10

A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media. 13 figs.

Gated frequency-resolved optical imaging with an optical parametric amplifier

DOEpatents

Cameron, Stewart M.; Bliss, David E.; Kimmel, Mark W.; Neal, Daniel R.

1999-01-01

A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media.

Problems of the design of low-noise input devices. [parametric amplifiers

NASA Technical Reports Server (NTRS)

Manokhin, V. M.; Nemlikher, Y. A.; Strukov, I. A.; Sharfov, Y. A.

1974-01-01

An analysis is given of the requirements placed on the elements of parametric centimeter waveband amplifiers for achievement of minimal noise temperatures. A low-noise semiconductor parametric amplifier using germanium parametric diodes for a receiver operating in the 4 GHz band was developed and tested confirming the possibility of satisfying all requirements.

Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

NASA Astrophysics Data System (ADS)

Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

2004-03-01

The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

1.25-3.125 Gb/s per user PON with RSOA as phase modulator for statistical wavelength ONU

NASA Astrophysics Data System (ADS)

Chu, Guang Yong; Polo, Victor; Lerín, Adolfo; Tabares, Jeison; Cano, Iván N.; Prat, Josep

2015-12-01

We report a new scheme to support, cost efficiently, ultra-dense wavelength division multiplexing (UDWDM) for optical access networks. As validating experiment, we apply phase modulation of a reflective semiconductor optical amplifier (RSOA) at the ONU with a single DFB, and simplified coherent receiver at OLT for upstream. We extend the limited 3-dB modulation bandwidth of available uncooled To-can packaged RSOA (~400 MHz) and operate it at 3.125 Gb/s with the optimal performance for phase modulation using small and large signal measurement characteristics. The optimal condition is selected at input power of 0 dBm, with 70 mA bias condition. The sensitivities at 3.125 Gb/s (at BER=10-3) for heterodyne and intradyne detection reach -34.3 dBm and -38.8 dBm, respectively.

Generation of a CW local oscillator signal using a stabilized injection locked semiconductor laser

NASA Astrophysics Data System (ADS)

Pezeshki, Jonah Massih

In high speed-communications, it is desirable to be able to detect small signals while maintaining a low bit-error rate. Conventional receivers for high-speed fiber optic networks are Amplified Direct Detectors (ADDs) that use erbium-doped fiber amplifiers (EDFAs) before the detector to achieve a suitable sensitivity. In principle, a better method for obtaining the maximum possible signal to noise ratio is through the use of homodyne detection. The major difficulty in implementing a homodyne detection system is the generation of a suitable local oscillator signal. This local oscillator signal must be at the same frequency as the received data signal, as well as be phase coherent with it. To accomplish this, a variety of synchronization techniques have been explored, including Optical Phase-Lock Loops (OPLL), Optical Injection Locking (OIL) with both Fabry-Perot and DFB lasers, and an Optical Injection Phase-Lock Loop (OIPLL). For this project I have implemented a method for regenerating a local oscillator from a portion of the received optical signal. This regenerated local oscillator is at the same frequency, and is phase coherent with, the received optical signal. In addition, we show that the injection locking process can be electronically stabilized by using the modulation transfer ratio of the slave laser as a monitor, given either a DFB or Fabry-Perot slave laser. We show that this stabilization technique maintains injection lock (given a locking range of ˜1GHz) for laser drift much greater than what is expected in a typical transmission system. In addition, we explore the quality of the output of the slave laser, and analyze its suitability as a local oscillator signal for a homodyne receiver.

Hybrid semiconductor fiber lasers for telecommunications

NASA Astrophysics Data System (ADS)

Khalili, Alireza

2006-12-01

Highly stable edge emitting semiconductor lasers are of utmost importance in most telecommunications applications where high-speed data transmission sets strict limits on the purity of the laser signal. Unfortunately, most edge emitting semiconductor lasers, unlike gaseous or solid-state laser sources, operate with many closely spaced axial modes, which accounts for the observed instability and large spikes in the output spectrum of such lasers. Consequently, in most telecom applications distributed feedback (DFB) or distributed Bragg reflector (DBR) techniques are used to ensure stability and single-frequency operation, further adding to the cost and complexity of such lasers. Additionally, coupling of the highly elliptical output beam of these lasers to singlemode fibers complicates the packaging procedure and sub-micron alignment of various optical components is often necessary. Utilizing the evanescent coupling between a semiconductor antiresonant reflecting optical waveguide (ARROW) and a side polished fiber, this thesis presents an alternative side-coupled laser module that eliminates the need for the cumbersome multi-component alignment processes of conventional laser packages, and creates an inherent mode selection mechanism that guarantees singlemode radiation into the fiber without any gratings. We have been able to demonstrate the first side-coupled fiber semiconductor laser in this technology, coupling more than 3mW of power at 850nm directly into a 5/125mum singlemode fiber. This mixed-cavity architecture yields a high thermal stability (˜0.06nm/°C), and negligible spectral spikes are observed. Theoretical background and simulation results, as well as several supplementary materials are also presented to further rationalize the experimental data. A side-coupled light-emitter and pre-amplifier are also proposed and discussed. We also study different architectures for attaining higher efficiency, higher output power, and wavelength tunability in such lasers. Finally, we discuss possible venues for integration of these side-coupled devices in a telecommunication system. Approved for publication.

System and method for linearly amplifying optical analog signals by backward Raman scattering

DOEpatents

Lin, Cheng-Heui

1988-01-01

A system for linearly amplifying an optical analog signal by backward stimulated Raman scattering comprises a laser source for generating a pump pulse; and an optic fiber having two opposed apertures, a first aperture for receiving the pump pulse and a second aperture for receiving the optical analog signal, wherein the optical analog signal is linearly amplified to an amplified optical analog signal.

System and method for linearly amplifying optical analog signals by backward Raman scattering

DOEpatents

Lin, Cheng-Heui

1988-07-05

A system for linearly amplifying an optical analog signal by backward stimulated Raman scattering comprises a laser source for generating a pump pulse; and an optic fiber having two opposed apertures, a first aperture for receiving the pump pulse and a second aperture for receiving the optical analog signal, wherein the optical analog signal is linearly amplified to an amplified optical analog signal.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

NASA Astrophysics Data System (ADS)

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-09-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

Next-generation bidirectional Triple-play services using RSOA based WDM Radio on Free-Space Optics PON

NASA Astrophysics Data System (ADS)

Mandal, Gour Chandra; Mukherjee, Rahul; Das, Binoy; Patra, Ardhendu Sekhar

2018-03-01

An innovative low cost reflective semiconductor amplifier (RSOA) based bidirectional Triple-play services (TPS) using wavelength division multiplexed radio on free-space-optics passive optical network (WDM-RoFSO-PON) is proposed and experimentally demonstrated to transmit data, voice and video services simultaneously. In this paper, the TPS (10 Gb/s data/voice and 1.49 Gb/s HDTV signal) are successfully transmitted over a 500 m free-space link in downstream and RSOA is utilized at the receiving site to broadcast 1.25 Gb/s data/voice signal over same free-space link in upstream by reusing the carrier, that makes the system cost-effective. High receiver sensitivity and signal-to-noise ratio (SNR), low bit-error-rate (BER) and low error vector magnitude (EVM), and excellent eye-diagrams in our proposed network build the system more reliable and stable with acceptable performance. Therefore, proposed WDM-RoFSO-PON could be the viable solution for future ubiquitous multiservice wireless network in the scenario of TPS.

Single-mode SOA-based 1kHz-linewidth dual-wavelength random fiber laser.

PubMed

Xu, Yanping; Zhang, Liang; Chen, Liang; Bao, Xiaoyi

2017-07-10

Narrow-linewidth multi-wavelength fiber lasers are of significant interests for fiber-optic sensors, spectroscopy, optical communications, and microwave generation. A novel narrow-linewidth dual-wavelength random fiber laser with single-mode operation, based on the semiconductor optical amplifier (SOA) gain, is achieved in this work for the first time, to the best of our knowledge. A simplified theoretical model is established to characterize such kind of random fiber laser. The inhomogeneous gain in SOA mitigates the mode competition significantly and alleviates the laser instability, which are frequently encountered in multi-wavelength fiber lasers with Erbium-doped fiber gain. The enhanced random distributed feedback from a 5km non-uniform fiber provides coherent feedback, acting as mode selection element to ensure single-mode operation with narrow linewidth of ~1kHz. The laser noises are also comprehensively investigated and studied, showing the improvements of the proposed random fiber laser with suppressed intensity and frequency noises.

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

NASA Astrophysics Data System (ADS)

Zhang, Z. Y.; Oehler, A. E. H.; Resan, B.; Kurmulis, S.; Zhou, K. J.; Wang, Q.; Mangold, M.; Süedmeyer, T.; Keller, U.; Weingarten, K. J.; Hogg, R. A.

2012-06-01

High pulse repetition rate (>=10 GHz) diode-pumped solid-state lasers, modelocked using semiconductor saturable absorber mirrors (SESAMs) are emerging as an enabling technology for high data rate coherent communication systems owing to their low noise and pulse-to-pulse optical phase-coherence. Quantum dot (QD) based SESAMs offer potential advantages to such laser systems in terms of reduced saturation fluence, broader bandwidth, and wavelength flexibility. Here, we describe the development of an epitaxial process for the realization of high optical quality 1.55 µm In(Ga)As QDs on GaAs substrates, their incorporation into a SESAM, and the realization of the first 10 GHz repetition rate QD-SESAM modelocked laser at 1.55 µm, exhibiting ~2 ps pulse width from an Er-doped glass oscillator (ERGO). With a high areal dot density and strong light emission, this QD structure is a very promising candidate for many other applications, such as laser diodes, optical amplifiers, non-linear and photonic crystal based devices.

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

PubMed Central

Ko, Wai Son; Bhattacharya, Indrasen; Tran, Thai-Truong D.; Ng, Kar Wei; Adair Gerke, Stephen; Chang-Hasnain, Connie

2016-01-01

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage. PMID:27659796

Phase-locking and coherent power combining of broadband linearly chirped optical waves.

PubMed

Satyan, Naresh; Vasilyev, Arseny; Rakuljic, George; White, Jeffrey O; Yariv, Amnon

2012-11-05

We propose, analyze and demonstrate the optoelectronic phase-locking of optical waves whose frequencies are chirped continuously and rapidly with time. The optical waves are derived from a common optoelectronic swept-frequency laser based on a semiconductor laser in a negative feedback loop, with a precisely linear frequency chirp of 400 GHz in 2 ms. In contrast to monochromatic waves, a differential delay between two linearly chirped optical waves results in a mutual frequency difference, and an acoustooptic frequency shifter is therefore used to phase-lock the two waves. We demonstrate and characterize homodyne and heterodyne optical phase-locked loops with rapidly chirped waves, and show the ability to precisely control the phase of the chirped optical waveform using a digital electronic oscillator. A loop bandwidth of ~ 60 kHz, and a residual phase error variance of < 0.01 rad(2) between the chirped waves is obtained. Further, we demonstrate the simultaneous phase-locking of two optical paths to a common master waveform, and the ability to electronically control the resultant two-element optical phased array. The results of this work enable coherent power combining of high-power fiber amplifiers-where a rapidly chirping seed laser reduces stimulated Brillouin scattering-and electronic beam steering of chirped optical waves.

Theory of Magnetic Bipolar Transistors

NASA Astrophysics Data System (ADS)

Zutic, Igor; Fabian, Jaroslav; Das Sarma, S.

2003-03-01

We introduce the concept of a magnetic bipolar transistor (MBT) (J. Fabian, I. Zutic, S. Das Sarma, cond-mat/0211639.), which can be realized using already available materials. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induced by external means (electrically or optically). The theory of ideal MBTs is developed and discussed in the forward active regime where the transistors can amplify signals. It is shown that source spin can be injected from the emitter to the collector. It is predicted that electrical current gain (amplification) can be controlled effectively by magnetic field and source spin. If a base is a ferromagnetic semiconductor we suggest several methods for using spin-polarized bipolar transport (I. Zutic, J. Fabian, S. Das Sarma, Phys. Rev. Lett. f 88, 066603 (2002); J. Fabian, I. Zutic, S. Das Sarma, Phys. Rev. B f 66, 165301 (2002).) to manipulate semiconductor ferromagnetism.

Performance Enhancement of Multichannel Gigabit Rate Bidirectional WDM-PON Using RSOA and Optimized Modulation Format

NASA Astrophysics Data System (ADS)

Parkash, Sooraj; Sharma, Anurag; Singh, Harsukhpreet

2016-09-01

This paper successfully demonstrates bidirectional wavelength division multiplexing passive optical network (WDM-PON) system for 32 channels, 0.8 nm (100 GHz) channels spacing with 3.5 GHz filter bandwidth. The system delivers 160 GB/s data rate and 80 GB/s data rate in downstream and upstream, respectively. The optical source for downstream data and upstream data is mode-locked laser at central office and reflective semiconductor optical amplifier (RSOA) at optical network unit. The maximum reach of designed system is 50 km without using any dispersion compensation scheme. This paper comprises comparison of series of modulation format in downstream and upstream such as SOLITON, NRZ, RZ, MANCHESTER, CSRZ and CRZ-DPSK and optimization of the performance of designed system. It has been observed that CRZ-DPSK/NRZ gives best performance in downstream and upstream transmission for designed system. The simulation work report of minimum BER is e-13 for CRZ-DPSK in downstream and e-16 for NRZ in upstream transmission in case of 32-channel bidirectional WDM-PON.

All-optical UWB generation and modulation using SOA-XPM effect and DWDM-based multi-channel frequency discrimination.

PubMed

Wang, Fei; Dong, Jianji; Xu, Enming; Zhang, Xinliang

2010-11-22

An all-optical UWB pulses generation and modulation scheme using cross phase modulation (XPM) effect of semiconductor optical amplifier (SOA) and DWDM-based multi-channel frequency discrimination is proposed and demonstrated, which has potential application in multiuser UWB-Over-Fiber communication systems. When a Gaussian pulse light and a wavelength-tunable CW probe light are together injected into the SOA, the probe light out from the SOA will have a temporal chirp due to SOA-XPM effect. When the chirped probe light is tuned to the slopes of single DWDM channel transmittance curve, the optical phase modulation to intensity modulation conversion is achieved at DWDM that serves as a multi-channel frequency discriminator, the inverted polarity Gaussian monocycle and doublet pulse is detected by a photodetector, respectively. If the probe lights are simultaneously aimed to different slopes of several DWDM channels, multi-channel or binary-phase-coded UWB signal generation can be acquired. Using proposed scheme, pulse amplitude modulation (PAM), pulse polarity modulation (PPM) and pulse shape modulation (PSM) to UWB pulses also can be conveniently realized.

Coherent Control of Scattering Processes in Semiconductors

NASA Astrophysics Data System (ADS)

Wehner, M. U.

1998-03-01

On a timescale which compares to the duration of single scattering events, the relaxation of optical excitations in semiconductors has to be described by the quantum kinetic theory. Instead of simple scattering rates this theory delivers a non-Markovian dephasing. Related memory effects have so far been observed for the case of electron-LO-phonon scattering in four-wave-mixing experiments on GaAs at T = 77 K using 15 fs pulses (L. Bányai, D.B. Tran Thoai, E. Reitsamer, H. Haug, D. Steinbach, M.U. Wehner, T. Marschner, M. Wegener and W. Stolz, Phys. Rev. Lett. 75), 2188 (1995). It is crucial for the quantum kinetic time regime that scattering processes must not be considered as completed and irreversibel. The reversibility of the scattering shortly after optical excitation is demonstrated in four-wave-mixing experiments using coherent control. By adjusting the relative phase of two phase-locked pulses, the non-Markovian phonon oscillations observed in Ref.1 can be either suppressed or amplified (M. U. Wehner, M. H. Ulm, D. S. Chemla and M. Wegener, Phys. Rev. Lett. submitted). The behavior of the coherently controlled scattering amplitude is discussed using a simple model Hamiltonian, which describes the variation of the phonon oscillations in amplitude and phase very well.

High average power scaling of optical parametric amplification through cascaded difference-frequency generators

DOEpatents

Jovanovic, Igor; Comaskey, Brian J.

2004-09-14

A first pump pulse and a signal pulse are injected into a first optical parametric amplifier. This produces a first amplified signal pulse. At least one additional pump pulse and the first amplified signal pulse are injected into at least one additional optical parametric amplifier producing an increased power coherent optical pulse.

Improving the power efficiency of SOA-based UWB over fiber systems via pulse shape randomization

NASA Astrophysics Data System (ADS)

Taki, H.; Azou, S.; Hamie, A.; Al Housseini, A.; Alaeddine, A.; Sharaiha, A.

2016-09-01

A simple pulse shape randomization scheme is considered in this paper for improving the performance of ultra wide band (UWB) communication systems using On Off Keying (OOK) or pulse position modulation (PPM) formats. The advantage of the proposed scheme, which can be either employed for impulse radio (IR) or for carrier-based systems, is first theoretically studied based on closed-form derivations of power spectral densities. Then, we investigate an application to an IR-UWB over optical fiber system, by utilizing the 4th and 5th orders of Gaussian derivatives. Our approach proves to be effective for 1 Gbps-PPM and 2 Gbps-OOK transmissions, with an advantage in terms of power efficiency for short distances. We also examine the performance for a system employing an in-line Semiconductor Optical Amplifier (SOA) with the view to achieve a reach extension, while limiting the cost and system complexity.

Multistage WDM access architecture employing cascaded AWGs

NASA Astrophysics Data System (ADS)

El-Nahal, F. I.; Mears, R. J.

2009-03-01

Here we propose passive/active arrayed waveguide gratings (AWGs) with enhanced performance for system applications mainly in novel access architectures employing cascaded AWG technology. Two technologies were considered to achieve space wavelength switching in these networks. Firstly, a passive AWG with semiconductor optical amplifiers array, and secondly, an active AWG. Active AWG is an AWG with an array of phase modulators on its arrayed-waveguides section, where a programmable linear phase-profile or a phase hologram is applied across the arrayed-waveguide section. This results in a wavelength shift at the output section of the AWG. These architectures can address up to 6912 customers employing only 24 wavelengths, coarsely separated by 1.6 nm. Simulation results obtained here demonstrate that cascaded AWGs access architectures have a great potential in future local area networks. Furthermore, they indicate for the first time that active AWGs architectures are more efficient in routing signals to the destination optical network units than passive AWG architectures.

Multifunctional switching unit for add/drop, wavelength conversion, format conversion, and WDM multicast based on bidirectional LCoS and SOA-loop architecture.

PubMed

Wang, Danshi; Zhang, Min; Qin, Jun; Lu, Guo-Wei; Wang, Hongxiang; Huang, Shanguo

2014-09-08

We propose a multifunctional optical switching unit based on the bidirectional liquid crystal on silicon (LCoS) and semiconductor optical amplifier (SOA) architecture. Add/drop, wavelength conversion, format conversion, and WDM multicast are experimentally demonstrated. Due to the bidirectional characteristic, the LCoS device cannot only multiplex the input signals, but also de-multiplex the converted signals. Dual-channel wavelength conversion and format conversion from 2 × 25Gbps differential quadrature phase-shift-keying (DQPSK) to 2 × 12.5Gbps differential phase-shift-keying (DPSK) based on four-wave mixing (FWM) in SOA is obtained with only one pump. One-to-six WDM multicast of 25Gbps DQPSK signals with two pumps is also achieved. All of the multicast channels are with a power penalty less than 1.1 dB at FEC threshold of 3.8 × 10⁻³.

Monolithic MZI-SOA hybrid switch for low-power and low-penalty operation.

PubMed

Cheng, Q; Wonfor, A; Wei, J L; Penty, R V; White, I H

2014-03-15

We report the first experimental demonstration of a monolithically integrated hybrid dilated 2×2 modular optical switch using Mach-Zehnder modulators as low-loss 1×2 switching elements and short semiconductor optical amplifiers to provide additional extinction and gain. An excellent 40 dB cross-talk/extinction ratio is recorded with data-modulated signal-to-noise ratios of up to 44 dB in a 0.1 nm bandwidth. A switching time of 3 ns is demonstrated. Bit error rate studies show extremely low subsystem penalties of less than 0.1 dB, and studies indicate that, by using this hybrid switch building block, an 8×8 port switch could be achieved with 14 dB input power dynamic range for subsystem penalties of less than 0.5 dB.

Vernier effect-based multiplication of the Sagnac beating frequency in ring laser gyroscope sensors

NASA Astrophysics Data System (ADS)

Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

2018-02-01

A multiplication method of the Sagnac effect scale factor in ring laser gyroscopes is presented based on the Vernier effect of a dual-coupler passive ring resonator coupled to the active ring. The multiplication occurs when the two rings have comparable lengths or integer multiples and their scale factors have opposite signs. In this case, and when the rings have similar areas, the scale factor is multiplied by ratio of their length to their length difference. The scale factor of the presented configuration is derived analytically and the lock-in effect is analyzed. The principle is demonstrated using optical fiber rings and semiconductor optical amplifier as gain medium. A scale factor multiplication by about 175 is experimentally measured, demonstrating larger than two orders of magnitude enhancement in the Sagnac effect scale factor for the first time in literature, up to the authors' knowledge.

Scanning Tunneling Optical Resonance Microscopy

NASA Technical Reports Server (NTRS)

Bailey, Sheila; Wilt, Dave; Raffaelle, Ryne; Gennett, Tom; Tin, Padetha; Lau, Janice; Castro, Stephanie; Jenkins, Philip; Scheiman, Dave

2003-01-01

Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically < 10 Hz) that the feedback circuit could respond, then the voltage applied to the piezoelectric tip-height actuator could be measured by use of a lock-in amplifier locked to the modulation (chopping) signal. However, at a high modulation frequency (typically in the kilohertz range or higher), the feedback circuit would be unable to respond. In this case, the photoenhanced portion of the tunneling current could be measured directly. For this purpose, the tunneling current would be passed through a precise resistor and the voltage drop would be measured by use of the lock-in amplifier.

Power semiconductor device with negative thermal feedback

NASA Technical Reports Server (NTRS)

Borky, J. M.; Thornton, R. D.

1970-01-01

Composite power semiconductor avoids second breakdown and provides stable operation. It consists of an array of parallel-connected integrated circuits fabricated in a single chip. The output power device and associated low-level amplifier are closely coupled thermally, so that they have a predetermined temperature relationship.

PCF based high power narrow line width pulsed fiber laser

NASA Astrophysics Data System (ADS)

Chen, H.; Yan, P.; Xiao, Q.; Wang, Y.; Gong, M.

2012-09-01

Based on semiconductor diode seeded multi-stage cascaded fiber amplifiers, we have obtained 88-W average power of a 1063-nm laser with high repetition rate of up to 1.5 MHz and a constant 2-ns pulse duration. No stimulated Brillouin scattering pulse or optical damage occurred although the maximum pulse peak power has exceeded 112 kW. The output laser exhibits excellent beam quality (M2x = 1.24 and M2y = 1.18), associated with a spectral line width as narrow as 0.065 nm (FWHM). Additionally, we demonstrate high polarization extinction ratio of 18.4 dB and good pulse stabilities superior to 1.6 % (RMS).

Basic Electronics II.

ERIC Educational Resources Information Center

Willison, Neal A.; Shelton, James K.

Designed for use in basic electronics programs, this curriculum guide is comprised of 15 units of instruction. Unit titles are Review of the Nature of Matter and the P-N Junction, Rectifiers, Filters, Special Semiconductor Diodes, Bipolar-Junction Diodes, Bipolar Transistor Circuits, Transistor Amplifiers, Operational Amplifiers, Logic Devices,…

Laser dynamics: The system dynamics and network theory of optoelectronic integrated circuit design

NASA Astrophysics Data System (ADS)

Tarng, Tom Shinming-T. K.

Laser dynamics is the system dynamics, communication and network theory for the design of opto-electronic integrated circuit (OEIC). Combining the optical network theory and optical communication theory, the system analysis and design for the OEIC fundamental building blocks is considered. These building blocks include the direct current modulation, inject light modulation, wideband filter, super-gain optical amplifier, E/O and O/O optical bistability and current-controlled optical oscillator. Based on the rate equations, the phase diagram and phase portrait analysis is applied to the theoretical studies and numerical simulation. The OEIC system design methodologies are developed for the OEIC design. Stimulating-field-dependent rate equations are used to model the line-width narrowing/broadening mechanism for the CW mode and frequency chirp of semiconductor lasers. The momentary spectra are carrier-density-dependent. Furthermore, the phase portrait analysis and the nonlinear refractive index is used to simulate the single mode frequency chirp. The average spectra of chaos, period doubling, period pulsing, multi-loops and analog modulation are generated and analyzed. The bifurcation-chirp design chart with modulation depth and modulation frequency as parameters is provided for design purpose.

Intermodulation and harmonic distortion in slow light Microwave Photonic phase shifters based on Coherent Population Oscillations in SOAs.

PubMed

Gasulla, Ivana; Sancho, Juan; Capmany, José; Lloret, Juan; Sales, Salvador

2010-12-06

We theoretically and experimentally evaluate the propagation, generation and amplification of signal, harmonic and intermodulation distortion terms inside a Semiconductor Optical Amplifier (SOA) under Coherent Population Oscillation (CPO) regime. For that purpose, we present a general optical field model, valid for any arbitrarily-spaced radiofrequency tones, which is necessary to correctly describe the operation of CPO based slow light Microwave Photonic phase shifters which comprise an electrooptic modulator and a SOA followed by an optical filter and supplements another recently published for true time delay operation based on the propagation of optical intensities. The phase shifter performance has been evaluated in terms of the nonlinear distortion up to 3rd order, for a modulating signal constituted of two tones, in function of the electrooptic modulator input RF power and the SOA input optical power, obtaining a very good agreement between theoretical and experimental results. A complete theoretical spectral analysis is also presented which shows that under small signal operation conditions, the 3rd order intermodulation products at 2Ω1 + Ω2 and 2Ω2 + Ω1 experience a power dip/phase transition characteristic of the fundamental tones phase shifting operation.

1047 nm laser diode master oscillator Nd:YLF power amplifier laser system

NASA Technical Reports Server (NTRS)

Yu, A. W.; Krainak, M. A.; Unger, G. L.

1993-01-01

A master oscillator power amplifier (MOPA) laser transmitter system at 1047 nm wavelength using a semiconductor laser diode and a diode pumped solid state (Nd:YLF) laser (DPSSL) amplifier is described. A small signal gain of 23 dB, a near diffraction limited beam, 1 Gbit/s modulation rates and greater than 0.6 W average power are achieved. This MOPA laser has the advantage of amplifying the modulation signal from the laser diode master oscillator (MO) with no signal degradation.

Selenium semiconductor core optical fibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, G. W.; Qian, Q., E-mail: qianqi@scut.edu.cn; Peng, K. L.

2015-02-15

Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Suchmore » crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.« less

Background-free balanced optical cross correlator

DOEpatents

Nejadmalayeri, Amir Hossein; Kaertner, Franz X

2014-12-23

A balanced optical cross correlator includes an optical waveguide, a first photodiode including a first n-type semiconductor and a first p-type semiconductor positioned about the optical waveguide on a first side of the optical waveguide's point of symmetry, and a second photodiode including a second n-type semiconductor and a second p-type semiconductor positioned about the optical waveguide on a second side of the optical waveguide's point of symmetry. A balanced receiver including first and second inputs is configured to produce an output current or voltage that reflects a difference in currents or voltages, originating from the first and the second photodiodes of the balanced cross correlator and fed to the first input and to the second input of the balanced receiver.

Bismuth-doped optical fibres: A new breakthrough in near-IR lasing media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dianov, Evgenii M

Recent results demonstrate that bismuth-doped optical fibres have considerable potential as near-IR active lasing media. This paper examines bismuth-doped fibres intended for the fabrication of fibre lasers and optical amplifiers and reviews recent results on the luminescence properties of various types of bismuth-doped fibres and the performance of bismuth-doped fibre lasers and optical amplifiers for the spectral range 1150 - 1550 nm. Problems are discussed that have yet to be solved in order to improve the efficiency of the bismuth lasers and optical amplifiers. (optical fibres, lasers and amplifiers. properties and applications)

Wavelength reused bidirectional transmission of adaptively modulated optical OFDM signals in WDM-PONs incorporating SOA and RSOA intensity modulators.

PubMed

Wei, J L; Hugues-Salas, E; Giddings, R P; Jin, X Q; Zheng, X; Mansoor, S; Tang, J M

2010-05-10

Detailed numerical investigations are undertaken of wavelength reused bidirectional transmission of adaptively modulated optical OFDM (AMOOFDM) signals over a single SMF in a colorless WDM-PON incorporating a semiconductor optical amplifier (SOA) intensity modulator and a reflective SOA (RSOA) intensity modulator in the optical line termination and optical network unit, respectively. A comprehensive theoretical model describing the performance of such network scenarios is, for the first time, developed, taking into account dynamic optical characteristics of SOA and RSOA intensity modulators as well as the effects of Rayleigh backscattering (RB) and residual downstream signal-induced crosstalk. The developed model is rigorously verified experimentally in RSOA-based real-time end-to-end OOFDM systems at 7.5 Gb/s. It is shown that the RB noise and crosstalk effects are dominant factors limiting the maximum achievable downstream and upstream transmission performance. Under optimum SOA and RSOA operating conditions as well as practical downstream and upstream optical launch powers, 10 Gb/s downstream and 6 Gb/s upstream over 40 km SMF transmissions of conventional double sideband AMOOFDM signals are feasible without utilizing in-line optical amplification and chromatic dispersion compensation. In particular, the aforementioned transmission performance can be improved to 23 Gb/s downstream and 8 Gb/s upstream over 40 km SMFs when single sideband subcarrier modulation is adopted in the downstream systems. (c) 2010 Optical Society of America.

Method and system for compact, multi-pass pulsed laser amplifier

DOEpatents

Erlandson, Alvin Charles

2014-11-25

A laser amplifier includes an input aperture operable to receive laser radiation having a first polarization, an output aperture coupled to the input aperture by an optical path, and a polarizer disposed along an optical path. A transmission axis of the polarizer is aligned with the first polarization. The laser amplifier also includes n optical switch disposed along the optical path. The optical switch is operable to pass the laser radiation when operated in a first state and to reflect the laser radiation when operated in a second state. The laser amplifier further includes an optical gain element disposed along the optical path and a polarization rotation device disposed along the optical path.

Mathematical Models of the Common-Source and Common-Gate Amplifiers using a Metal-Ferroelectric-Semiconductor Field effect Transistor

NASA Technical Reports Server (NTRS)

Hunt, Mitchell; Sayyah, Rana; Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

2013-01-01

Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric- semiconductor field effect transistors (MOSFETs) are developed in this paper. The models are compared against data collected with MOSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth as well as differences and advantages as compared to the performance of each circuit using a MOSFET.

Adaptive upstream rate adjustment by RSOA-ONU depending on different injection power of seeding light in standard-reach and long-reach PON systems

NASA Astrophysics Data System (ADS)

Yeh, C. H.; Chow, C. W.; Shih, F. Y.; Pan, C. L.

2012-08-01

The wavelength division multiplexing-time division multiplexing (WDM-TDM) passive optical network (PON) using reflective semiconductor optical amplifier (RSOA)-based colorless optical networking units (ONUs) is considered as a promising candidate for the realization of fiber-to-the-home (FTTH). And this architecture is actively considered by Industrial Technology Research Institute (ITRI) for the realization of FTTH in Taiwan. However, different fiber distances and optical components would introduce different power budgets to different ONUs in the PON. Besides, due to the aging of optical transmitter (Tx), the power decay of the distributed optical carrier from the central office (CO) could also reduce the injection power into each ONU. The situation will be more severe in the long-reach (LR) PON, which is considered as an option for the future access. In this work, we investigate a WDM-TDM PON using RSOA-based ONU for upstream data rate adjustment depending on different continuous wave (CW) injection powers. Both standard-reach (25 km) and LR (100 km) transmissions are evaluated. Moreover, a detail analysis of the upstream signal bit-error rate (BER) performances at different injection powers, upstream data rates, PON split-ratios under stand-reach and long-reach is presented.

Method and system for compact efficient laser architecture

DOEpatents

Bayramian, Andrew James; Erlandson, Alvin Charles; Manes, Kenneth Rene; Spaeth, Mary Louis; Caird, John Allyn; Deri, Robert J.

2015-09-15

A laser amplifier module having an enclosure includes an input window, a mirror optically coupled to the input window and disposed in a first plane, and a first amplifier head disposed along an optical amplification path adjacent a first end of the enclosure. The laser amplifier module also includes a second amplifier head disposed along the optical amplification path adjacent a second end of the enclosure and a cavity mirror disposed along the optical amplification path.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, Sol P.; Patterson, Frank G.; Deri, Robert J.

1995-01-01

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier.

Cross-talk free, low-noise optical amplifier

DOEpatents

Dijaili, S.P.; Patterson, F.G.; Deri, R.J.

1995-07-25

A low-noise optical amplifier solves crosstalk problems in optical amplifiers by using an optical cavity oriented off-axis (e.g. perpendicular) to the direction of a signal amplified by the gain medium of the optical amplifier. Several devices are used to suppress parasitic lasing of these types of structures. The parasitic lasing causes the gain of these structures to be practically unusable. The lasing cavity is operated above threshold and the gain of the laser is clamped to overcome the losses of the cavity. Any increase in pumping causes the lasing power to increase. The clamping action of the gain greatly reduces crosstalk due to gain saturation for the amplified signal beam. It also reduces other nonlinearities associated with the gain medium such as four-wave mixing induced crosstalk. This clamping action can occur for a bandwidth defined by the speed of the laser cavity. The lasing field also reduces the response time of the gain medium. By having the lasing field off-axis, no special coatings are needed. Other advantages are that the lasing field is easily separated from the amplified signal and the carrier grating fluctuations induced by four-wave mixing are decreased. Two related methods reduce the amplified spontaneous emission power without sacrificing the gain of the optical amplifier. 11 figs.

Tapered rib fiber coupler for semiconductor optical devices

DOEpatents

Vawter, Gregory A.; Smith, Robert Edward

2001-01-01

A monolithic tapered rib waveguide for transformation of the spot size of light between a semiconductor optical device and an optical fiber or from the fiber into the optical device. The tapered rib waveguide is integrated into the guiding rib atop a cutoff mesa type semiconductor device such as an expanded mode optical modulator or and expanded mode laser. The tapered rib acts to force the guided light down into the mesa structure of the semiconductor optical device instead of being bound to the interface between the bottom of the guiding rib and the top of the cutoff mesa. The single mode light leaving or entering the output face of the mesa structure then can couple to the optical fiber at coupling losses of 1.0 dB or less.

Some characteristic features of the construction of the amplifying channel for working with semiconductor detectors in the charged particle energy spectrometer. [noise minimization at preamplifier input

NASA Technical Reports Server (NTRS)

Kuzyuta, E. I.

1974-01-01

A transistorized spectrometric amplifier with a shaper is reported that selects the shape of the frequency characteristic of the amplifying channel for which the primary frequency spectrum of the signal will pass, but where the noise spectrum is limited to the maximum. A procedure is presented for selecting the shaping circuits and their inclusion principles.

Room-temperature electron spin amplifier based on Ga(In)NAs alloys.

PubMed

Puttisong, Yuttapoom; Buyanova, Irina A; Ptak, Aaron J; Tu, Charles W; Geelhaar, Lutz; Riechert, Henning; Chen, Weimin M

2013-02-06

The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy.

PubMed

Zhang, Chao; Jeon, Hoyeon; Oh, Myungchul; Lee, Minjun; Kim, Sungmin; Yi, Sunwouk; Lee, Hanho; Zoh, Inhae; Yoo, Yongchan; Kuk, Young

2017-06-01

A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ∼7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).

Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy

NASA Astrophysics Data System (ADS)

Zhang, Chao; Jeon, Hoyeon; Oh, Myungchul; Lee, Minjun; Kim, Sungmin; Yi, Sunwouk; Lee, Hanho; Zoh, Inhae; Yoo, Yongchan; Kuk, Young

2017-06-01

A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ˜7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).

Inter-BSs virtual private network for privacy and security enhanced 60 GHz radio-over-fiber system

NASA Astrophysics Data System (ADS)

Zhang, Chongfu; Chen, Chen; Zhang, Wei; Jin, Wei; Qiu, Kun; Li, Changchun; Jiang, Ning

2013-06-01

A novel inter-basestations (inter-BSs) based virtual private network (VPN) for the privacy and security enhanced 60 GHz radio-over-fiber (RoF) system using optical code-division multiplexing (OCDM) is proposed and demonstrated experimentally. By establishing inter-BSs VPN overlaying the network structure of a 60 GHz RoF system, the express and private paths for the communication of end-users under different BSs can be offered. In order to effectively establish the inter-BSs VPN, the OCDM encoding/decoding technology is employed in the RoF system. In each BS, a 58 GHz millimeter-wave (MMW) is used as the inter-BSs VPN channel, while a 60 GHz MMW is used as the common central station (CS)-BSs communication channel. The optical carriers used for the downlink, uplink and VPN link transmissions are all simultaneously generated in a lightwave-centralized CS, by utilizing four-wave mixing (FWM) effect in a semiconductor optical amplifier (SOA). The obtained results properly verify the feasibility of our proposed configuration of the inter-BSs VPN in the 60 GHz RoF system.

High-speed tunable microwave photonic notch filter based on phase modulator incorporated Lyot filter.

PubMed

Ge, Jia; Feng, Hanlin; Scott, Guy; Fok, Mable P

2015-01-01

A high-speed tunable microwave photonic notch filter with ultrahigh rejection ratio is presented, which is achieved by semiconductor optical amplifier (SOA)-based single-sideband modulation and optical spectral filtering with a phase modulator-incorporated Lyot (PM-Lyot) filter. By varying the birefringence of the phase modulator through electro-optic effect, electrically tuning of the microwave photonic notch filter is experimentally achieved at tens of gigahertz speed. The use of SOA-polarizer based single-sideband modulation scheme provides good sideband suppression over a wide frequency range, resulting in an ultrahigh rejection ratio of the microwave photonic notch filter. Stable filter spectrum with bandstop rejection ratio over 60 dB is observed over a frequency tuning range from 1.8 to 10 GHz. Compare with standard interferometric notch filter, narrower bandwidth and sharper notch profile are achieved with the unique PM-Lyot filter, resulting in better filter selectivity. Moreover, bandwidth tuning is also achieved through polarization adjustment inside the PM-Lyot filter, that the 10-dB filter bandwidth is tuned from 0.81 to 1.85 GHz.

Enhanced 40 and 80 Gb/s wavelength conversion using a rectangular shaped optical filter for both red and blue spectral slicing.

PubMed

Raz, O; Herrera, J; Dorren, H J S

2009-02-02

By using a tunable filter with tunability of both bandwidth and wavelength and a very sharp filter roll-off, considerable improvement of all optical Wavelength Conversion, based on Cross Gain and Phase Modulation effects in a Semiconductor Optical Amplifier and spectral slicing, is shown. At 40 Gb/s slicing of blue spectral components is shown to result in a small penalty of 0.7 dB, with a minimal eye broadening, and at 80 Gb/s the low demonstrated 0.5 dB penalty is a dramatic improvement over previously reported wavelength converters using the same principal. Additionally, we give for the first time quantitative results for the case of red spectral slicing at 40 Gb/s which we found to have only 0.5 dB penalty and a narrower time response, as anticipated by previously published theoretical papers. Numerical simulations for the dependence of the eye opening on the filter characteristics highlight the importance of the combination of a sharp filter roll-off and a broad passband.

Tutorial: Integrated-photonic switching structures

NASA Astrophysics Data System (ADS)

Soref, Richard

2018-02-01

Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de; Arsenijević, D.; Huang, H.

2015-11-09

This work reports on non-degenerate four-wave mixing under dual-mode injection in metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry-Perot laser operating at 1550 nm. High values of normalized conversion efficiency of −18.6 dB, optical signal-to-noise ratio of 37 dB, and third order optical susceptibility normalized to material gain χ{sup (3)}/g{sub 0} of ∼4 × 10{sup −19} m{sup 3}/V{sup 3} are measured for 1490 μm long quantum-dash lasers. These values are similar to those obtained with distributed-feedback lasers and semiconductor optical amplifiers, which are much more complicated to fabricate. On the other hand, due to the faster gain saturation and enhanced modulation of carriermore » populations, quantum-dot lasers demonstrate 12 dB lower conversion efficiency and 4 times lower χ{sup (3)}/g{sub 0} compared to quantum dash lasers.« less

All-optical single-sideband frequency upconversion utilizing the XPM effect in an SOA-MZI.

PubMed

Kim, Doo-Ho; Lee, Joo-Young; Choi, Hyung-June; Song, Jong-In

2016-09-05

An all-optical single sideband (OSSB) frequency upconverter based on the cross-phase modulation (XPM) effect is proposed and experimentally demonstrated to overcome the power fading problem caused by the chromatic dispersion of fiber in radio-over-fiber systems. The OSSB frequency upconverter consists of an arrayed waveguide grating (AWG) and a semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI) and does not require an extra delay line used for phase noise compensation. The generated OSSB radio frequency (RF) signal transmitted over single-mode fibers up to 20 km shows a flat electrical RF power response as a function of the fiber length. The upconverted electrical RF signal at 48 GHz shows negligible degradation of the phase noise even without an extra delay line. The measured phase noise of the upconverted RF signal (48 GHz) is -74.72 dBc/Hz at an offset frequency of 10 kHz. The spurious free dynamic range (SFDR) measured by a two-tone test to estimate the linearity of the OSSB frequency upconverter is 72.5 dB·Hz^2/3.

Optical Amplifier for Space Applications

NASA Technical Reports Server (NTRS)

Fork, Richard L.; Cole, Spencer T.; Gamble, Lisa J.; Diffey, William M.; Keys, Andrew S.

1999-01-01

We describe an optical amplifier designed to amplify a spatially sampled component of an optical wavefront to kilowatt average power. The goal is means for implementing a strategy of spatially segmenting a large aperture wavefront, amplifying the individual segments, maintaining the phase coherence of the segments by active means, and imaging the resultant amplified coherent field. Applications of interest are the transmission of space solar power over multi-megameter distances, as to distant spacecraft, or to remote sites with no preexisting power grid.

Laser pattern generator challenges in airborne molecular contamination protection

NASA Astrophysics Data System (ADS)

Ekberg, Mats; Skotte, Per-Uno; Utterback, Tomas; Paul, Swaraj; Kishkovich, Oleg P.; Hudzik, James S.

2003-08-01

The introduction of photomask laser pattern generators presents new challenges to system designers and manufacturers. One of the laser pattern generator's environmental operating challenges is Airborne Molecular Contamination (AMC), which affects both chemically amplified resists (CAResist) and laser optics. Similar challenges in CAResist protection have already been addressed in semiconductor wafer lithography with reasonable solutions and experience gained by all those involved. However, photomask and photomask equipment manufacturers have not previously had a comparable experience, and some photomask AMC issues differ from those seen in semiconductor wafer lithography. Culminating years of AMC experience, the authors discuss specific requirements of Photomask AMC. Air sampling and material of construction analysis were performed to understand these particular AMC challenges and used to develop an appropriate filtration specification for different classes of contaminates. The authors portray the importance of cooperation between tool designers and AMC experts early in the design stage to assure goal attainment to maximize both process stability and machine productivity in advanced mask making. In conclusion, the authors provide valuable recommendations to both laser tool users and other equipment manufacturers.

An integrated general purpose SiPM based optical module with a high dynamic range

NASA Astrophysics Data System (ADS)

Bretz, T.; Engel, R.; Hebbeker, T.; Kemp, J.; Middendorf, L.; Peters, C.; Schumacher, J.; Šmída, R.; Veberič, D.

2018-06-01

Silicon photomultipliers (SiPMs) are semiconductor-based light-sensors offering a high gain, a mechanically and optically robust design and high photon detection efficiency. Due to these characteristics, they started to replace conventional photomultiplier tubes in many applications in recent years. This paper presents an optical module based on SiPMs designed for the application in scintillators as well as lab measurements. The module hosts the SiPM bias voltage supply and three pre-amplifiers with different gain levels to exploit the full dynamic range of the SiPMs. Two SiPMs, read-out in parallel, are equipped with light guides to increase the sensitive area. The light guides are optimized for the read-out of wavelength shifting fibers as used in many plastic scintillator detectors. The optical and electrical performance of the module is characterized in detail in laboratory measurements. Prototypes have been installed and tested in a modified version of the Scintillator Surface Detector developed for AugerPrime, the upgrade of the Pierre Auger Observatory. The SiPM module is operated in the Argentinian Pampas and first data proves its usability in such harsh environments.

The transmission of symmetric 40 Gb/s TWDM-based NG-PON2 utilizing delay interferometer (DI) for RSOA bandwidth enhancement

NASA Astrophysics Data System (ADS)

Bindhaiq, Salem; Zulkifli, Nadiatulhuda; Supa'at, AbuSahmah M.

2016-07-01

Time and wavelength-division multiplexed passive optical network (TWDM-PON) has been finally selected as the pragmatic solution for the next-generation passive optical network stage 2 (NG-PON2). In this paper, we propose a symmetric 40 Gb/s TWDM-PON system with low cost reflective semiconductor optical amplifier (RSOA) for both downstream and upstream directions. A single bi-pass delay interferometer (DI), deployed in the optical line terminal (OLT), is used to enhance the poor performance of the RSOA with respect to the low bandwidth induced by laser chirp. With the help of the 40 GHz free spectrum range (FSR) DI, we show a successful transmission of the proposed work through simulation study where an aggregate capacity of 40 Gb/s is transported over 40 km transmission distance with 32 splits. The TWDM-PON system at BER of 10-6 has shown a minimum receiver sensitivity of -22.78 dBm and -22.71 dBm for both downstream and upstream, respectively with maximum power penalty of 2 dB for downstream channel and 2.39 dB for upstream channel.

New technique for simulation of optical fiber amplifiers control schemes in dynamic WDM systems

NASA Astrophysics Data System (ADS)

Freitas, Marcio; Klein, Jackson; Givigi, Sidney, Jr.; Calmon, Luiz C.

2005-04-01

One topic that has attracted attention is related to the behavior of the optical amplifiers under dynamic conditions, specifically because amplifiers working in a saturated condition produce power transients in all-optical reconfigurable WDM networks, e.g. adding/dropping channels. The goal of this work is to introduce the multiwavelength time-driven simulations technique, capable of simulation and analysis of transient effects in all-optical WDM networks with optical amplifiers, and allow the use of control schemes to avoid or minimize the impacts of transient effects in the system performance.

Investigation of Surface Breakdown on Semiconductor Devices Using Optical Probing Techniques.

DTIC Science & Technology

1990-01-01

18] L. Bovino , T. Burke, R. Youmans, M. Weiner, and J. Car, r, "Recent Advances in Optically C’ntrolled Bulk Semiconductor Switches," Digest of...Comp. Simul. 5 (3), 175 (1988). [321 M. Weiner, L. Bovino , R. Youmans, and T. Burke, "Modeling of the Optically Conrolled Semiconductor Switch," J

Design of high-capacity fiber-optic transport systems

NASA Astrophysics Data System (ADS)

Liao, Zhi Ming

2001-08-01

We study the design of fiber-optic transport systems and the behavior of fiber amplifiers/lasers with the aim of achieving higher capacities with larger amplifier spacing. Solitons are natural candidates for transmitting short pulses for high-capacity fiber-optic networks because of its innate ability to use two of fiber's main defects, fiber dispersion and fiber nonlinearity to balance each other. In order for solitons to retain its dynamic nature, amplifiers must be placed periodically to restore powers to compensate for fiber loss. Variational analysis is used to study the long-term stability of a periodical- amplifier system. A new regime of operation is identified which allows the use of a much longer amplifier spacing. If optical fibers are the blood vessels of an optical communication system, then the optical amplifier based on erbium-doped fiber is the heart. Optical communication systems can avoid the use of costly electrical regenerators to maintain system performance by being able to optically amplify the weakened signals. The length of amplifier spacing is largely determined by the gain excursion experienced by the solitons. We propose, model, and demonstrate a distributed erbium-doped fiber amplifier which can drastically reduce the amount of gain excursion experienced by the solitons, therefore allowing a much longer amplifier spacing and superior stability. Dispersion management techniques have become extremely valuable tools in the design of fiber-optic communication systems. We have studied in depth the advantage of different arnplification schemes (lumped and distributed) for various dispersion compensation techniques. We measure the system performance through the Q factor to evaluate the added advantage of effective noise figure and smaller gain excursion. An erbium-doped fiber laser has been constructed and characterized in an effort to develop a test bed to study transmission systems. The presence of mode-partition noise in an erbium-doped fiber laser was experimentally demonstrated. A numerical model has been developed using the Langevin rate equations and its predictions are in qualitative agreement with experimental data.

S – C – L triple wavelength superluminescent source based on an ultra-wideband SOA and FBGs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, H; Zulkifli, M Z; Hassan, N A

2013-10-31

We propose and demonstrate a wide-band semiconductor optical amplifier (SOA) based triple-wavelength superluminescent source with the output in the S-, C- and L-band regions. The proposed systems uses an ultra-wideband SOA with an amplification range from 1440 to 1620 nm as the linear gain medium. Three fibre Bragg gratings (FBGs) with centre wavelengths of 1500, 1540 and 1580 nm are used to generate the lasing wavelengths in the S-, Cand L-bands respectively, while a variable optical attenuator is used to finely balance the optical powers of the lasing wavelengths. The ultra-wideband SOA generates an amplified spontaneous emission (ASE) spectrum withmore » a peak power of -33 dBm at the highest SOA drive current, and also demonstrates a down-shift in the centre wavelength of the generated spectrum due to the spatial distribution of the carrier densities. The S-band wavelength is the dominant wavelength at high drive currents, with an output power of -6 dBm as compared to the C- and L-bands, which only have powers of -11 and -10 dBm, respectively. All wavelengths have a high average signal-to-noise ratio more than 60 dB at the highest drive current of 390 mA, and the system also shows a high degree of stability, with power fluctuations of less than 3 dB within 70 min. The proposed system can find many applications where a wide-band and stable laser source is crucial, such as in communications and sensing. (control of laser radiation parameters)« less

Introduction to Semiconductor Devices

NASA Astrophysics Data System (ADS)

Brennan, Kevin F.

2005-03-01

This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

Gain statistics of a fiber optical parametric amplifier with a temporally incoherent pump.

PubMed

Xu, Y Q; Murdoch, S G

2010-03-15

We present an investigation of the statistics of the gain fluctuations of a fiber optical parametric amplifier pumped with a temporally incoherent pump. We derive a simple expression for the probability distribution of the gain of the amplified optical signal. The gain statistics are shown to be a strong function of the signal detuning and allow the possibility of generating optical gain distributions with controllable long-tails. Very good agreement is found between this theory and the experimentally measured gain distributions of an incoherently pumped amplifier.

Light Optics for Optical Stochastic Cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andorf, Matthew; Lebedev, Valeri; Piot, Philippe

2016-06-01

In Optical Stochastic Cooling (OSC) radiation generated by a particle in a "pickup" undulator is amplified and transported to a downstream "kicker" undulator where it interacts with the same particle which radiated it. Fermilab plans to carry out both passive (no optical amplifier) and active (optical amplifier) tests of OSC at the Integrable Optics Test Accelerator (IOTA) currently in construction*. The performace of the optical system is analyzed with simulations in Synchrotron Radiation Workshop (SRW) accounting for the specific temporal and spectral properties of undulator radiation and being augmented to include dispersion of lens material.

Sensor development at the semiconductor laboratory of the Max-Planck-Society

NASA Astrophysics Data System (ADS)

Bähr, A.; Lechner, P.; Ninkovic, J.

2017-12-01

For more than twenty years the semiconductor laboratory of the Max-Planck Society (MPG-HLL) is developing high-performing, specialised, scientific silicon sensors including the integration of amplifying electronics on the sensor chip. This paper summarises the actual status of these devices like pnCCDs and DePFET Active Pixel Sensors and their applications.

Fabrication of optically reflecting ohmic contacts for semiconductor devices

DOEpatents

Sopori, Bhushan L.

1995-01-01

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

Ultrafast transient grating radiation to optical image converter

DOEpatents

Stewart, Richard E; Vernon, Stephen P; Steel, Paul T; Lowry, Mark E

2014-11-04

A high sensitivity transient grating ultrafast radiation to optical image converter is based on a fixed transmission grating adjacent to a semiconductor substrate. X-rays or optical radiation passing through the fixed transmission grating is thereby modulated and produces a small periodic variation of refractive index or transient grating in the semiconductor through carrier induced refractive index shifts. An optical or infrared probe beam tuned just below the semiconductor band gap is reflected off a high reflectivity mirror on the semiconductor so that it double passes therethrough and interacts with the radiation induced phase grating therein. A small portion of the optical beam is diffracted out of the probe beam by the radiation induced transient grating to become the converted signal that is imaged onto a detector.

Wavelength-division multiplexed optical integrated circuit with vertical diffraction grating

NASA Technical Reports Server (NTRS)

Lang, Robert J. (Inventor); Forouhar, Siamak (Inventor)

1994-01-01

A semiconductor optical integrated circuit for wave division multiplexing has a semiconductor waveguide layer, a succession of diffraction grating points in the waveguide layer along a predetermined diffraction grating contour, a semiconductor diode array in the waveguide layer having plural optical ports facing the succession of diffraction grating points along a first direction, respective semiconductor diodes in the array corresponding to respective ones of a predetermined succession of wavelengths, an optical fiber having one end thereof terminated at the waveguide layer, the one end of the optical fiber facing the succession of diffraction grating points along a second direction, wherein the diffraction grating points are spatially distributed along the predetermined contour in such a manner that the succession of diffraction grating points diffracts light of respective ones of the succession of wavelengths between the one end of the optical fiber and corresponding ones of the optical ports.

Electroabsorption-modulated widely tunable DBR laser transmitter for WDM-PONs.

PubMed

Han, Liangshun; Liang, Song; Wang, Huitao; Qiao, Lijun; Xu, Junjie; Zhao, Lingjuan; Zhu, Hongliang; Wang, Baojun; Wang, Wei

2014-12-01

We present an InP based distributed Bragg reflector (DBR) laser transmitter which has a wide wavelength tuning range and a high chip output power for wavelength division multiplexing passive optical network (WDM-PON) applications. By butt-jointing InGaAsP with 1.45 µm emission wavelength as the material of the grating section, the laser wavelength can be tuned for over 13 nm by the DBR current. Accompanied by varying the chip temperature, the tuning range can be further enlarged to 16 nm. With the help of the integrated semiconductor optical amplifier (SOA), the largest chip output power is over 30 mW. The electroabsorption modulator (EAM) is integrated into the device by the selective-area growth (SAG) technique. The 3 dB small signal modulation bandwidth of the EAM is over 13 GHz. The device has both a simple tuning scheme and a simple fabrication procedure, making it suitable for low cost massive production which is desirable for WDM-PON uses.

Switchable dual-wavelength SOA-based fiber laser with continuous tunability over the C-band at room-temperature.

PubMed

Ummy, M A; Madamopoulos, N; Razani, M; Hossain, A; Dorsinville, R

2012-10-08

We propose and demonstrate a simple compact, inexpensive, SOA-based, dual-wavelength tunable fiber laser, that can potentially be used for photoconductive mixing and generation of waves in the microwave and THz regions. A C-band semiconductor optical amplifier (SOA) is placed inside a linear cavity with two Sagnac loop mirrors at its either ends, which act as both reflectors and output ports. The selectivity of dual wavelengths and the tunability of the wavelength difference (Δλ) between them is accomplished by placing a narrow bandwidth (e.g., 0.3 nm) tunable thin film-based filter and a fiber Bragg grating (with bandwidth 0.28 nm) inside the loop mirror that operates as the output port. A total output power of + 6.9 dBm for the two wavelengths is measured and the potential for higher output powers is discussed. Optical power and wavelength stability are measured at 0.33 dB and 0.014 nm, respectively.

Packaging-induced failure of semiconductor lasers and optical telecommunications components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharps, J.A.

1996-12-31

Telecommunications equipment for field deployment generally have specified lifetimes of > 100,000 hr. To achieve this high reliability, it is common practice to package sensitive components in hermetic, inert gas environments. The intent is to protect components from particulate and organic contamination, oxidation, and moisture. However, for high power density 980 nm diode lasers used in optical amplifiers, the authors found that hermetic, inert gas packaging induced a failure mode not observed in similar, unpackaged lasers. They refer to this failure mode as packaging-induced failure, or PIF. PIF is caused by nanomole amounts of organic contamination which interact with highmore » intensity 980 nm light to form solid deposits over the emitting regions of the lasers. These deposits absorb 980 nm light, causing heating of the laser, narrowing of the band gap, and eventual thermal runaway. The authors have found PIF is averted by packaging with free O{sub 2} and/or a getter material that sequesters organics.« less

Improving performance of channel equalization in RSOA-based WDM-PON by QR decomposition.

PubMed

Li, Xiang; Zhong, Wen-De; Alphones, Arokiaswami; Yu, Changyuan; Xu, Zhaowen

2015-10-19

In reflective semiconductor optical amplifier (RSOA)-based wavelength division multiplexed passive optical network (WDM-PON), the bit rate is limited by low modulation bandwidth of RSOAs. To overcome the limitation, we apply QR decomposition in channel equalizer (QR-CE) to achieve successive interference cancellation (SIC) for discrete Fourier transform spreading orthogonal frequency division multiplexing (DFT-S OFDM) signal. Using an RSOA with a 3-dB modulation bandwidth of only ~800 MHz, we experimentally demonstrate a 15.5-Gb/s over 20-km SSMF DFT-S OFDM transmission with QR-CE. The experimental results show that DFTS-OFDM with QR-CE attains much better BER performance than DFTS-OFDM and OFDM with conventional channel equalizers. The impacts of several parameters on QR-CE are investigated. It is found that 2 sub-bands in one OFDM symbol and 1 pilot in each sub-band are sufficient to achieve optimal performance and maintain the high spectral efficiency.

Application of Transistors in Textiles: Monitoring Water Transportation Behaviour in Fibrous Assemblies

NASA Astrophysics Data System (ADS)

Chatterjee, Arobindo; Singh, Pratibha; Ghosh, Subrata

2017-06-01

Simple semiconductor device has been used for amplifying the analog signals, obtained with the change in electrical resistance in fibrous assembly and converting these amplified copies of signals to digital signals. This paper deals with the application of transistors as amplifier, as well as switch. Different circuit configurations using transistors have been tried for sensing and reciprocating the real time data on suitable display device. It is found that transistors configured as common-emitter amplifiers can precisely sense the liquid at the surface of fibrous assembly at different levels with respect to time.

Semiconductor Optical Nonlinearities in the IR

DTIC Science & Technology

2007-09-01

study of the nonlinear properties of semiconductors in the infrared spectral region to develop a fundamental understanding of their optical... infrared countermeasures. 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF 18. NUMBER 19a. NAME OF RESPONSIBLE PERSON a. REPORT b...absorption [I] B. S. Wherrett, "Scaling rules for multiphoton interband absorption in semiconductors", Journal of Optical Society ofAmerica B, 1, 67 (1984) [2

Electrospun amplified fiber optics.

PubMed

Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

2015-03-11

All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, R.; Pocha, M.D.

1994-08-23

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. 10 figs.

Semiconductor switch geometry with electric field shaping

DOEpatents

Booth, Rex; Pocha, Michael D.

1994-01-01

An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium.

Coherent white light amplification

DOEpatents

Jovanovic, Igor; Barty, Christopher P.

2004-05-25

A system for coherent simultaneous amplification of a broad spectral range of light that includes an optical parametric amplifier and a source of a seed pulse is described. A first angular dispersive element is operatively connected to the source of a seed pulse. A first imaging telescope is operatively connected to the first angular dispersive element and operatively connected to the optical parametric amplifier. A source of a pump pulse is operatively connected to the optical parametric amplifier. A second imaging telescope is operatively connected to the optical parametric amplifier and a second angular dispersive element is operatively connected to the second imaging telescope.

Theoretical analysis of a method for extracting the phase of a phase-amplitude modulated signal generated by a direct-modulated optical injection-locked semiconductor laser

NASA Astrophysics Data System (ADS)

Lee, Hwan; Cho, Jun-Hyung; Sung, Hyuk-Kee

2017-05-01

The phase modulation (PM) and amplitude modulation (AM) of optical signals can be achieved using a direct-modulated (DM) optical injection-locked (OIL) semiconductor laser. We propose and theoretically analyze a simple method to extract the phase component of a PM signal produced by a DM-OIL semiconductor laser. The pure AM component of the combined PM-AM signal can be isolated by square-law detection in a photodetector and can then be used to compensate for the PM-AM signal based on an optical homodyne method. Using the AM compensation technique, we successfully developed a simple and cost-effective phase extraction method applicable to the PM-AM optical signal of a DM-OIL semiconductor laser.

Fabrication of optically reflecting ohmic contacts for semiconductor devices

DOEpatents

Sopori, B.L.

1995-07-04

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

NASA Astrophysics Data System (ADS)

Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

2017-02-01

Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

NASA Technical Reports Server (NTRS)

Agrawal, Govind P.; Goorjian, Peter M.

1998-01-01

The main objective of the Joint-Research Interchange NCC2-5149 was to develop computer codes for accurate simulation of femtosecond pulse propagation in semiconductor lasers and semiconductor amplifiers [I]. The code should take into account all relevant processes such as the interband and intraband carrier relaxation mechanisms and the many-body effects arising from the Coulomb interaction among charge carriers [2]. This objective was fully accomplished. We made use of a previously developed algorithm developed at NASA Ames [3]-[5]. The new algorithm was tested on several problems of practical importance. One such problem was related to the amplification of femtosecond optical pulses in semiconductors. These results were presented in several international conferences over a period of three years. With the help of a postdoctoral fellow, we also investigated the origin of instabilities that can lead to the formation of femtosecond pulses in different kinds of lasers. We analyzed the occurrence of absolute instabilities in lasers that contain a dispersive host material with third-order nonlinearities. Starting from the Maxwell-Bloch equations, we derived general multimode equations to distinguish between convective and absolute instabilities. We find that both self-phase modulation and intensity-dependent absorption can dramatically affect the absolute stability of such lasers. In particular, the self-pulsing threshold (the so-called second laser threshold) can occur at few times the first laser threshold even in good-cavity lasers for which no self-pulsing occurs in the absence of intensity-dependent absorption. These results were presented in an international conference and published in the form of two papers.

White random lasing in mixture of ZnSe, CdS and CdSSe micropowders

NASA Astrophysics Data System (ADS)

Alyamani, A. Y.; Leanenia, M. S.; Alanazi, L. M.; Aljohani, M. M.; Aljariwi, A. A.; Rzheutski, M. V.; Lutsenko, E. V.; Yablonskii, G. P.

2016-03-01

Room temperature random lasing with white light emission in a mixture of AIIBVI semiconductor powders was achieved for the first time. The scattering gain media was formed by the mixture of closely packed active micron sized crystallites of ZnSe, CdS, CdSSe semiconductors. The micropowders were produced by grinding bulk crystals of each compound. Optical excitation was performed by 10-nanosecond pulses of tuned Ti:Al2O3-laser at 390 nm. The lasing in the mixture of semiconductor powders was achieved simultaneously at four wavelengths in blue, green, yellow and red spectral regions after exceeding the threshold excitation power density. A drastic integral intensity increase, spectrum narrowing and appearance of mode structure accompanied the laser action. ZnSe crystallites produce the laser light at about 460 nm while CdS particles - at about 520 nm. Two types of CdSSe semiconductor micropowders with different sulfur content lase at 580 nm and 660 nm. The threshold excitation power densities for all laser lines in the emission spectrum are approximately the same of about 0.9 MW/cm2. The sum of the emission spectrum of the mixture of the micropowders forms white light with high brightness. Lasing is due to an appearance of random feedback for amplified radiation in the active medium of closely packed light scattering crystallites. The presented results may find their applications for visualization systems, lighting technology, data transmission, medicine as biosensors and in identification systems. The key feature of random lasers is low cost of its production and possibility to be deposited on any type of surface.

Future directions in 980-nm pump lasers: submarine deployment to low-cost watt-class terrestrial pumps

NASA Astrophysics Data System (ADS)

Gulgazov, Vadim N.; Jackson, Gordon S.; Lascola, Kevin M.; Major, Jo S.; Parke, Ross; Richard, Tim; Rossin, Victor V.; Zhang, Kai

1999-09-01

The demands of global bandwidth and distribution are rising rapidly as Internet usage grows. This fundamentally means that more photons are flowing within optical cables. While transmitting sources launches some optical power, the majority of the optical power that is present within modern telecommunication systems originates from optical amplifiers. In addition, modern optical amplifiers offer flat optical gain over broad wavelength bands, thus making possible dense wavelength de-multiplexing (DWDM) systems. Optical amplifier performance, and by extension the performance of the laser pumps that drive them, is central to the future growth of both optical transmission and distribution systems. Erbium-doped amplifiers currently dominate optical amplifier usage. These amplifiers absorb pump light at 980 nm and/or 1480 nm, and achieve gain at wavelengths around 1550 nm. 980 nm pumps achieve better noise figures and are therefore used for the amplification of small signals. Due to the quantum defect, 1480 nm lasers deliver more signal photon per incident photon. In addition, 1480 nm lasers are less expensive than 980 nm lasers. Thus, 1480 nm pump lasers are used for amplification in situations where noise is not critical. The combination of these traits leads to the situation where many amplifiers contain 980 nm lasers to pump the input section of the Er- doped fiber with 1480 nm lasers being used to pump the latter section of Er fiber. This can be thought of as using 980 nm lasers to power an optical pre-amplifier with the power amplification function being pump with 1480 nm radiation. This paper will focus on 980 nm pump lasers and the impact that advances in 980 nm pump technology will have on optical amplification systems. Currently, 980 nm technology is rapidly advancing in two areas, power and reliability. Improving reliability is becoming increasingly important as amplifiers move towards employing more pump lasers and using these pump lasers without redundancy. Since the failure rate allowable for an amplifier is not a function of the number of pumps employed in the amplifier, the allowable failure rate of an individual pump laser is decreasing for next-generation amplifiers. This will lead to specifications for terrestrial pumps well below 1000 FIT, and may lead to the case where high power amplifiers need laser pump reliability to approach 100 FIT. In addition, 980 nm laser diodes are now being deployed in submarine systems where failure rates lower than 100 FIT are commonly specified. It is obvious that both terrestrial and submarine markets are pushing allowable failure rates for pumps for optical amplifiers to continually decrease. A second push for improvement is in the output power of 980 nm pump modules. There exist a number of motivations for increasing the output power of pump lasers. First, each additional channel in a DWDM system requires additional power. To first order, a doubling in channel count implies a doubling in pump power. Second, larger amplifiers require multiple pumps. Higher output power from pump modules allows for fewer pumps, less complicated control systems and smaller size amplifiers. The discussion of this paper will focus on how current development progress of 980 nm laser diodes addresses these issues: better reliability and higher output powers.

Performance improvement of eight-state continuous-variable quantum key distribution with an optical amplifier

NASA Astrophysics Data System (ADS)

Guo, Ying; Li, Renjie; Liao, Qin; Zhou, Jian; Huang, Duan

2018-02-01

Discrete modulation is proven to be beneficial to improving the performance of continuous-variable quantum key distribution (CVQKD) in long-distance transmission. In this paper, we suggest a construct to improve the maximal generated secret key rate of discretely modulated eight-state CVQKD using an optical amplifier (OA) with a slight cost of transmission distance. In the proposed scheme, an optical amplifier is exploited to compensate imperfection of Bob's apparatus, so that the generated secret key rate of eight-state protocol is enhanced. Specifically, we investigate two types of optical amplifiers, phase-insensitive amplifier (PIA) and phase-sensitive amplifier (PSA), and thereby obtain approximately equivalent improved performance for eight-state CVQKD system when applying these two different amplifiers. Numeric simulation shows that the proposed scheme can well improve the generated secret key rate of eight-state CVQKD in both asymptotic limit and finite-size regime. We also show that the proposed scheme can achieve the relatively high-rate transmission at long-distance communication system.

Angle amplifier based on multiplexed volume holographic gratings

NASA Astrophysics Data System (ADS)

Cao, Liangcai; Zhao, Yifei; He, Qingsheng; Jin, Guofan

2008-03-01

Angle amplifier of laser beam scanner is a widely used device in optical systems. Volume holographic optical elements can be applied in the angle amplifier. Compared with the traditional angle amplifier, it has the advantages of high angle resolution, high diffraction efficiency, small size, and high angle magnification and flexible design. Bragg anglewavelength- compensating recording method is introduced. Because of the Bragg compensatory relation between angle and wavelength, this device could be recorded at another wavelength. The design of the angle amplifier recording at the wavelength of 514.2nm for the working wavelength of 632.8nm is described. An optical setup for recording the angle amplifier device is designed and discussed. Experimental results in the photorefractive crystal Fe:LiNbO 3 demonstrate the feasibility of the angle amplifier scheme.

Optical cavity furnace for semiconductor wafer processing

DOEpatents

Sopori, Bhushan L.

2014-08-05

An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

Improvement of highly sensitive lidar with a thumb-sized sensor-head built using an optical fiber preamplifier

NASA Astrophysics Data System (ADS)

Inoue, Daisuke; Ichikawa, Tadashi; Matsubara, Hiroyuki; Mao, Xueon; Maeda, Mitsutoshi; Nagashima, Chie; Kagami, Manabu

2012-06-01

We have developed a LIDAR system with a sensor head which, although it includes a scanning mechanism, is less than 20 cc in size. The system is not only small, but is also highly sensitive. Our LIDAR system is based on time-of-flight measurements, and incorporates an optical fiber. The main feature of our system is the utilization of optical amplifiers for both the transmitter and the receiver, and the optical amplifiers enable us to exceed the detection limit set by thermal noise. In conventional LIDAR systems the detection limit is determined by the thermal noise, because the avalanche photo-diodes (APD) and trans-impedance amplifiers (TIA) that they use detect the received signals directly. In the case of our LIDAR system, the received signal is amplified by an optical fiber amplifier before reaching the photo diode and the TIA. Therefore, our LIDAR system boosts the signal level before the weak incoming signal is depleted by thermal noise. There are conditions under which the noise figure for the combination of an optical fiber amplifier and a photo diode is superior to the noise figure for an avalanche photo diode. We optimized the gains of the optical fiber amplifier and the TIA in our LIDAR system such that it would be capable of detecting a single photon. As a result, the detection limit of our system is determined by shot noise. We have previously demonstrated optical pre-amplified LIDAR with a perfect co-axial optical system[1]. For this we used a variable optical attenuator to remove internal reflection from the transmission and receiving lenses. However, the optical attenuator had an insertion loss of 6dB which reduced the sensitivity of the LIDAR. We re-designed the optical system such that it was semi-co-axial and removed the variable optical attenuator. As a result, we succeeded in scanning up to a range of 80 m. This small and highly sensitive measurement technology shows great potential for use in LIDAR.

Demonstration of flexible and reconfigurable WDM multicast scheme supporting downstream emergency multicast communication for WDM optical access network

NASA Astrophysics Data System (ADS)

Li, Ze; Zhang, Min; Wang, Danshi; Cui, Yue

2017-09-01

We propose a flexible and reconfigurable wavelength-division multiplexing (WDM) multicast scheme supporting downstream emergency multicast communication for WDM optical access network (WDM-OAN) via a multicast module (MM) based on four-wave mixing (FWM) in a semiconductor optical amplifier. It serves as an emergency measure to dispose of the burst, large bandwidth, and real-time multicast service with fast service provisioning and high resource efficiency. It also plays the role of physical backup in cases of big data migration or network disaster caused by invalid lasers or modulator failures. It provides convenient and reliable multicast service and emergency protection for WDM-OAN without modifying WDM-OAN structure. The strategies of an MM setting at the optical line terminal and remote node are discussed to apply this scheme to passive optical networks and active optical networks, respectively. Utilizing the proposed scheme, we demonstrate a proof-of-concept experiment in which one-to-six/eight 10-Gbps nonreturn-to-zero-differential phase-shift keying WDM multicasts in both strategies are successfully transmitted over single-mode fiber of 20.2 km. One-to-many reconfigurable WDM multicasts dealing with higher data rate and other modulation formats of multicast service are possible through the proposed scheme. It can be applied to different WDM access technologies, e.g., time-wavelength-division multiplexing-OAN and coherent WDM-OAN, and upgraded smoothly.

Optical processing for semiconductor device fabrication

NASA Technical Reports Server (NTRS)

Sopori, Bhushan L.

1994-01-01

A new technique for semiconductor device processing is described that uses optical energy to produce local heating/melting in the vicinity of a preselected interface of the device. This process, called optical processing, invokes assistance of photons to enhance interface reactions such as diffusion and melting, as compared to the use of thermal heating alone. Optical processing is performed in a 'cold wall' furnace, and requires considerably lower energies than furnace or rapid thermal annealing. This technique can produce some device structures with unique properties that cannot be produced by conventional thermal processing. Some applications of optical processing involving semiconductor-metal interfaces are described.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, James W.

1996-01-01

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit.

Radiation detection system

DOEpatents

Whited, R.C.

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI/sub 2/, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

Directional amplifier in an optomechanical system with optical gain

NASA Astrophysics Data System (ADS)

Jiang, Cheng; Song, L. N.; Li, Yong

2018-05-01

Directional amplifiers are crucial nonreciprocal devices in both classical and quantum information processing. Here we propose a scheme for realizing a directional amplifier between optical and microwave fields based on an optomechanical system with optical gain, where an active optical cavity and two passive microwave cavities are coupled to a common mechanical resonator via radiation pressure. The two passive cavities are coupled via hopping interaction to facilitate the directional amplification between the active and passive cavities. We obtain the condition of achieving optical directional amplification and find that the direction of amplification can be controlled by the phase differences between the effective optomechanical couplings. The effects of the gain rate of the active cavity and the effective coupling strengths on the maximum gain of the amplifier are discussed. We show that the noise added to this amplifier can be greatly suppressed in the large cooperativity limit.

A LATTICE THEORY OF THE ELECTRO-OPTIC EFFECTS IN SEMICONDUCTORS.

DTIC Science & Technology

A unified lattice theory of the electro - optic effect in semiconductor crystals, which encompasses the piezo-electric and elasto-optic effects, is...presented. Expressions are derived for the constant stress and constant strain electro - optic coefficients and the results are specialized to crystals of the zincblende structure. (Author)

Distributed gain in plasmonic reflectors and its use for terahertz generation.

PubMed

Sydoruk, O; Syms, R R A; Solymar, L

2012-08-27

Semiconductor plasmons have potential for terahertz generation. Because practical device formats may be quasi-optical, we studied theoretically distributed plasmonic reflectors that comprise multiple interfaces between cascaded two-dimensional electron channels. Employing a mode-matching technique, we show that transmission through and reflection from a single interface depend on the magnitude and direction of a dc current flowing in the channels. As a result, plasmons can be amplified at an interface, and the cumulative effect of multiple interfaces increases the total gain, leading to plasmonic reflection coefficients exceeding unity. Reversing the current direction in a distributed reflector, however, has the opposite effect of plasmonic deamplification. Consequently, we propose structurally asymmetric resonators comprising two different distributed reflectors and predict that they are capable of terahertz oscillations at low threshold currents.

Monolithically integrated bacteriorhodopsin-GaAs/GaAlAs phototransceiver.

PubMed

Shin, Jonghyun; Bhattacharya, Pallab; Xu, Jian; Váró, György

2004-10-01

A monolithically integrated bacteriorhodopsin-semiconductor phototransceiver is demonstrated for the first time to the authors' knowledge. In this novel biophotonic optical interconnect, the input photoexcitation is detected by bacteriorhodopsin (bR) that has been selectively deposited onto the gate of a GaAs-based field-effect transistor. The photovoltage developed across the bR is converted by the transistor into an amplified photocurrent, which drives an integrated light-emitting diode with a Ga0.37Al0.63As active region. Advantage is taken of the high-input impedance of the field-effect transistor, which matches the high internal resistance of bR. The input and output wavelengths are 594 and 655 nm, respectively. The transient response of the optoelectronic circuit to modulated input light has also been studied.

Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

NASA Astrophysics Data System (ADS)

Opalevs, D.; Scholz, M.; Stuhler, J.; Gilfert, C.; Liu, L. J.; Wang, X. Y.; Vetter, A.; Kirner, R.; Scharf, T.; Noell, W.; Rockstuhl, C.; Li, R. K.; Chen, C. T.; Voelkel, R.; Leisching, P.

2018-02-01

We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

Bio-isolated dc operational amplifier. [for bioelectric measurements

NASA Technical Reports Server (NTRS)

Lee, R. D. (Inventor)

1974-01-01

A bio-isolated dc operational amplifier is described for use in making bioelectrical measurements of a patient while providing isolation of the patient from electrical shocks. The circuit contains a first operational amplifier coupled to the patient with its output coupled in a forward loop through a first optic coupler to a second operational amplifier. The output of the second operational amplifier is coupled to suitable monitoring circuitry via a feedback circuit including a second optic coupler to the input of the first operational amplifier.

FIBER OPTICS. ACOUSTOOPTICS: Amplification of semiconductor laser radiation in the wavelength range 1.24-1.3 μm by stimulated Raman scattering in an optical fiber

NASA Astrophysics Data System (ADS)

Belotitskiĭ, V. I.; Kuzin, E. A.; Ovsyannikov, D. V.; Petrov, Mikhail P.

1990-07-01

An investigation was made of the influence of weak semiconductor laser radiation on the spectrum of stimulated Raman scattering in a single-mode optical waveguide pumped by a YAG:Nd3+ laser emitting at 1.06 μm. The scattered radiation power increased by a factor exceeding 10 at the semiconductor laser wavelength. A small-signal dynamic gain reached 47 dB. Simultaneous amplification was observed of several modes of multimode semiconductor laser radiation with an intermode spectral interval of 1.3 nm.

Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

PubMed Central

2014-01-01

Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

Compound semiconductor optical waveguide switch

DOEpatents

Spahn, Olga B.; Sullivan, Charles T.; Garcia, Ernest J.

2003-06-10

An optical waveguide switch is disclosed which is formed from III-V compound semiconductors and which has a moveable optical waveguide with a cantilevered portion that can be bent laterally by an integral electrostatic actuator to route an optical signal (i.e. light) between the moveable optical waveguide and one of a plurality of fixed optical waveguides. A plurality of optical waveguide switches can be formed on a common substrate and interconnected to form an optical switching network.

Conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation using optically injected semiconductor lasers.

PubMed

Hung, Yu-Han; Tseng, Chin-Hao; Hwang, Sheng-Kwang

2018-06-01

This Letter investigates an optically injected semiconductor laser for conversion from non-orthogonally to orthogonally polarized optical single-sideband modulation. The underlying mechanism relies solely on nonlinear laser characteristics and, thus, only a typical semiconductor laser is required as the key conversion unit. This conversion can be achieved for a broadly tunable frequency range up to at least 65 GHz. After conversion, the microwave phase quality, including linewidth and phase noise, is mostly preserved, and simultaneous microwave amplification up to 23 dB is feasible.

Thermodynamic output of single-atom quantum optical amplifiers and their phase-space fingerprint

NASA Astrophysics Data System (ADS)

Perl, Y.; Band, Y. B.; Boukobza, E.

2017-05-01

We analyze a resonant single-atom two-photon quantum optical amplifier both dynamically and thermodynamically. A detailed thermodynamic analysis shows that the nonlinear amplifier is thermodynamically equivalent to the linear amplifier. However, by calculating the Wigner quasiprobability distribution for various initial field states, we show that unique quantum features in optical phase space, absent in the linear amplifier, are retained for extended times, despite the fact that dissipation tends to wash out dynamical features observed at early evolution times. These features are related to the discrete nature of the two-photon matter-field interaction and fingerprint the initial field state at thermodynamic times.

Fiber Based Optical Amplifier for High Energy Laser Pulses Final Report CRADA No. TC02100.0

DOE Office of Scientific and Technical Information (OSTI.GOV)

Messerly, M.; Cunningham, P.

This was a collaborative effort between Lawrence Livermore National Security, LLC (formerly The Regents of the University of California)/Lawrence Livermore National Laboratory (LLNL), and The Boeing Company to develop an optical fiber-based laser amplifier capable of producing and sustaining very high-energy, nanosecond-scale optical pulses. The overall technical objective of this CRADA was to research, design, and develop an optical fiber-based amplifier that would meet specific metrics.

Tunable Oscillations in Optically Injected Semiconductor Lasers With Reduced Sensitivity to Perturbations - Postprint

DTIC Science & Technology

2014-09-01

Squeezed light from injection- locked quantum well lasers ,” Phys. Rev. Lett., vol. 71, pp. 3951–3954, 1993. [30] A. E. Siegman , Lasers , 1st ed...AFRL-RY-WP-TP-2014-0297 TUNABLE OSCILLATIONS IN OPTICALLY INJECTED SEMICONDUCTOR LASERS WITH REDUCED SENSITIVITY TO PERTURBATIONS -POSTPRINT...OSCILLATIONS IN OPTICALLY INJECTED SEMICONDUCTOR LASERS WITH REDUCED SENSITIVITY TO PERTURBATIONS - POSTPRINT 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1996-08-20

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually or by utilizing an optical fiber and an electrical sensing circuit. 7 figs.

Highly sensitive lidar with a thumb-sized sensor-head built using an optical fiber preamplifier

NASA Astrophysics Data System (ADS)

Inoue, Daisuke; Ichikawa, Tadashi; Matsubara, Hiroyuki; Mao, Xueon; Maeda, Mitsutoshi; Nagashima, Chie; Kagami, Manabu

2011-06-01

We developed a LIDAR system with a sensor head as small as 22 cc, in spite of the inclusion of a scanning mechanism. This LIDAR system not only has a small body, but is also highly sensitive. Our LIDAR system is based on time-of-flight measurements, and it incorporates an optical fiber. The main feature of our system is the utilization of optical amplifiers for both the transmitter and the receiver, and the optical amplifiers enabled us to exceed the detection limit of thermal noise. In conventional LIDAR systems the detection limit is determined by thermal noise, because the avalanche photo-diodes (APD) and trans-impedance amplifiers (TIA) that they use detect the received signals directly. In the case of our LIDAR system, received signal is amplified by an optical fiber amplifier in front of the photo diode and the TIA. Therefore, our LIDAR system can boost the signal level before the weak incoming signal is depleted by thermal noise. There are conditions under which the noise figure for the combination of an optical fiber amplifier and a photo diode is superior to the noise figure for an avalanche photo diode. We optimized the gain of the optical fiber amplifier and TIA in our LIDAR system such that it is capable of detecting a single photon. As a result, the detection limit of our LIDAR system is determined by shot noise. This small and highly sensitive measurement technology shows great potential for use in LIDAR with an optical preamplifier.

Two and Three Beam Pumped Optical Parametric Amplifier of Chirped Pulses

NASA Astrophysics Data System (ADS)

Ališauskas, S.; Butkus, R.; Pyragaitė, V.; Smilgevičius, V.; Stabinis, A.; Piskarskas, A.

2010-04-01

We present two and three beam pumped optical parametric amplifier of broadband chirped pulses. The seed pulses from Ti:sapphire oscillator were stretched and amplified in a non-collinear geometry pumping with up to three beams derived from independent laser amplifiers. The signal with ˜90 nm bandwidth was amplified up to 0.72 mJ. The conversion efficiency dependence on intersection angles of pump beams is also revealed.

Optically pre-amplified lidar-radar

NASA Astrophysics Data System (ADS)

Morvan, Loic; Dolfi, Daniel; Huignard, Jean-Pierre

2001-09-01

We present the concept of an optically pre-amplified intensity modulated lidar, where the modulation frequency is in the microwave domain (1-10 GHz). Such a system permits to combine directivity of laser beams with mature radar processing. As an intensity modulated or dual-frequency laser beam is directed on a target, the backscattered intensity is collected by an optical system, pass through an optical preamplifier, and is detected on a high speed photodiode in a direct detection scheme. A radar type processing permits then to extract range, speed and identification information. The association of spatially multimode amplifier and direct detection allows low sensitivity to atmospheric turbulence and large field of view. We demonstrated theoretically that optical pre-amplification can greatly enhance sensitivity, even in spatially multimode amplifiers, such as free-space amplifier or multimode doped fiber. Computed range estimates based on this concept are presented. Laboratory demonstrations using 1 to 3 GHz modulated laser sources and >20 dB gain in multimode amplifiers are detailed. Preliminary experimental results on range and speed measurements and possible use for large amplitude vibrometry will be presented.

Deeply etched MMI-based components on 4 μm thick SOI for SOA-based optical RAM cell circuits

NASA Astrophysics Data System (ADS)

Cherchi, Matteo; Ylinen, Sami; Harjanne, Mikko; Kapulainen, Markku; Aalto, Timo; Kanellos, George T.; Fitsios, Dimitrios; Pleros, Nikos

2013-02-01

We present novel deeply etched functional components, fabricated by multi-step patterning in the frame of our 4 μm thick Silicon on Insulator (SOI) platform based on singlemode rib-waveguides and on the previously developed rib-tostrip converter. These novel components include Multi-Mode Interference (MMI) splitters with any desired splitting ratio, wavelength sensitive 50/50 splitters with pre-filtering capability, multi-stage Mach-Zehnder Interferometer (MZI) filters for suppression of Amplified Spontaneous Emission (ASE), and MMI resonator filters. These novel building blocks enable functionalities otherwise not achievable on our SOI platform, and make it possible to integrate optical RAM cell layouts, by resorting to our technology for hybrid integration of Semiconductor Optical Amplifiers (SOAs). Typical SOA-based RAM cell layouts require generic splitting ratios, which are not readily achievable by a single MMI splitter. We present here a novel solution to this problem, which is very compact and versatile and suits perfectly our technology. Another useful functional element when using SOAs is the pass-band filter to suppress ASE. We pursued two complimentary approaches: a suitable interleaved cascaded MZI filter, based on a novel suitably designed MMI coupler with pre-filtering capabilities, and a completely novel MMI resonator concept, to achieve larger free spectral ranges and narrower pass-band response. Simulation and design principles are presented and compared to preliminary experimental functional results, together with scaling rules and predictions of achievable RAM cell densities. When combined with our newly developed ultra-small light-turning concept, these new components are expected to pave the way for high integration density of RAM cells.

Gain-assisted broadband ring cavity enhanced spectroscopy

NASA Astrophysics Data System (ADS)

Selim, Mahmoud A.; Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

2017-02-01

Incoherent broadband cavity enhanced spectroscopy can significantly increase the effective path length of light-matter interaction to detect weak absorption lines over broad spectral range, for instance to detect gases in confined environments. Broadband cavity enhancement can be based on the decay time or the intensity drop technique. Decay time measurement is based on using tunable laser source that is expensive and suffers from long scan time. Intensity dependent measurement is usually reported based on broadband source using Fabry-Perot cavity, enabling short measurement time but suffers from the alignment tolerance of the cavity and the cavity insertion loss. In this work we overcome these challenges by using an alignment-free ring cavity made of an optical fiber loop and a directional coupler, while having a gain medium pumped below the lasing threshold to improve the finesse and reduce the insertion loss. Acetylene (C2H2) gas absorption is measured around 1535 nm wavelength using a semiconductor optical amplifier (SOA) gain medium. The system is analyzed for different ring resonator forward coupling coefficient and loses, including the 3-cm long gas cell insertion loss and fiber connector losses used in the experimental verification. The experimental results are obtained for a coupler ratio of 90/10 and a fiber length of 4 m. The broadband source is the amplified spontaneous emission of another SOA and the output is measured using a 70pm-resolution optical spectrum analyzer. The absorption depth and the effective interaction length are improved about an order of magnitude compared to the direct absorption of the gas cell. The presented technique provides an engineering method to improve the finesse and, consequently the effective length, while relaxing the technological constraints on the high reflectivity mirrors and free-space cavity alignment.

Injection-seeded optical parametric oscillator and system

DOEpatents

Lucht, Robert P.; Kulatilaka, Waruna D.; Anderson, Thomas N.; Bougher, Thomas L.

2007-10-09

Optical parametric oscillators (OPO) and systems are provided. The OPO has a non-linear optical material located between two optical elements where the product of the reflection coefficients of the optical elements are higher at the output wavelength than at either the pump or idler wavelength. The OPO output may be amplified using an additional optical parametric amplifier (OPA) stage.

Optical source and apparatus for remote sensing

NASA Technical Reports Server (NTRS)

Coyle, Donald Barry (Inventor)

2011-01-01

An optical amplifier is configured to amplify an injected seed optical pulse. The optical amplifier may include two or more gain sections coupled to form a continuous solid waveguide along a primary optical path. Each gain section may include: (i) an optical isolator forming an input to that gain section; (ii) a doped optical fiber having a first end coupled to the optical isolator and having a second end; (iii) a plurality of pump laser diodes; (iv) a controller providing drive signals to each of the plurality, the controller being configured to provide at least pulsed drive signals; and (v) an optical coupler having a first input port coupled to the second end, and a second input port coupled to the plurality and an output port.

Fully integrated multi-optoelectronic synthesizer for THz pumping source in wireless communications with rich backup redundancy and wide tuning range.

PubMed

Xu, Junjie; Hou, Lianping; Deng, Qiufang; Han, Liangshun; Liang, Song; Marsh, John H; Zhu, Hongliang

2016-07-06

We report a monolithic photonic integrated circuit (PIC) for THz communication applications. The PIC generates up to 4 optical frequency lines which can be mixed in a separate device to generate THz radiation, and each of the optical lines can be modulated individually to encode data. Physically, the PIC comprises an array of wavelength tunable distributed feedback lasers each with its own electro-absorption modulator. The lasers are designed with a long cavity to operate with a narrow linewidth, typically <4 MHz. The light from the lasers is coupled via an multimode interference (MMI) coupler into a semiconductor optical amplifier (SOA). By appropriate selection and biasing of pairs of lasers, the optical beat signal can be tuned continuously over the range from 0.254 THz to 2.723 THz. The EAM of each channel enables signal leveling balanced between the lasers and realizing data encoding, currently at data rates up to 6.5 Gb/s. The PIC is fabricated using regrowth-free techniques, making it economic for volume applications, such for use in data centers. The PIC also has a degree of redundancy, making it suitable for applications, such as inter-satellite communications, where high reliability is mandatory.

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

PubMed

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

Nonlinear pulse propagation in InAs/InP quantum dot optical amplifiers: Rabi oscillations in the presence of nonresonant nonlinearities

NASA Astrophysics Data System (ADS)

Karni, O.; Mishra, A. K.; Eisenstein, G.; Reithmaier, J. P.

2015-03-01

We study the interplay between coherent light-matter interactions and nonresonant pulse propagation effects when ultrashort pulses propagate in room-temperature quantum dot (QD) semiconductor optical amplifiers (SOAs). The signatures observed on a pulse envelope after propagating in a transparent SOA, when coherent Rabi oscillations are absent, highlight the contribution of two-photon absorption (TPA), and its accompanying Kerr-like effect, as well as of linear dispersion, to the modification of the pulse complex electric field profile. These effects are incorporated into our previously developed finite-difference time-domain comprehensive model that describes the interaction between the pulses and the QD SOA. The present generalized model is used to investigate the combined effect of coherent and nonresonant phenomena in the gain and absorption regimes of the QD SOA. It confirms that in the QD SOA we examined, linear dispersion in the presence of the Kerr-like effect causes pulse compression, which counteracts the pulse peak suppression due to TPA, and also modifies the patterns which the coherent Rabi oscillations imprint on the pulse envelope under both gain and absorption conditions. The inclusion of these effects leads to a better fit with experiments and to a better understanding of the interplay among the various mechanisms so as to be able to better analyze more complex future experiments of coherent light-matter interaction induced by short pulses propagating along an SOA.

All-semiconductor metamaterial-based optical circuit board at the microscale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Min, Li; Huang, Lirong, E-mail: lrhuang@hust.edu.cn

2015-07-07

The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arrangingmore » anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.« less

3D hybrid integrated lasers for silicon photonics

NASA Astrophysics Data System (ADS)

Song, B.; Pinna, S.; Liu, Y.; Megalini, L.; Klamkin, J.

2018-02-01

A novel 3D hybrid integration platform combines group III-V materials and silicon photonics to yield high-performance lasers is presented. This platform is based on flip-chip bonding and vertical optical coupling integration. In this work, indium phosphide (InP) devices with monolithic vertical total internal reflection turning mirrors were bonded to active silicon photonic circuits containing vertical grating couplers. Greater than 2 mW of optical power was coupled into a silicon waveguide from an InP laser. The InP devices can also be bonded directly to the silicon substrate, providing an efficient path for heat dissipation owing to the higher thermal conductance of silicon compared to InP. Lasers realized with this technique demonstrated a thermal impedance as low as 6.2°C/W, allowing for high efficiency and operation at high temperature. InP reflective semiconductor optical amplifiers were also integrated with 3D hybrid integration to form integrated external cavity lasers. These lasers demonstrated a wavelength tuning range of 30 nm, relative intensity noise lower than -135 dB/Hz and laser linewidth of 1.5 MHz. This platform is promising for integration of InP lasers and photonic integrated circuits on silicon photonics.

A Photonic Crystal Laser from Solution Based Organo-Lead Iodide Perovskite Thin Films.

PubMed

Chen, Songtao; Roh, Kwangdong; Lee, Joonhee; Chong, Wee Kiang; Lu, Yao; Mathews, Nripan; Sum, Tze Chien; Nurmikko, Arto

2016-04-26

Perovskite semiconductors are actively investigated for high performance solar cells. Their large optical absorption coefficient and facile solution-based, low-temperature synthesis of thin films make perovskites also a candidate for light-emitting devices across the visible and near-infrared. Specific to their potential as optical gain medium for lasers, early work has demonstrated amplified spontaneous emission and lasing at attractively low thresholds of photoexcitation. Here, we take an important step toward practically usable perovskite lasers where a solution-processed thin film is embedded within a two-dimensional photonic crystal resonator. We demonstrate high degree of temporally and spatially coherent lasing whereby well-defined directional emission is achieved near 788 nm wavelength at optical pumping energy density threshold of 68.5 ± 3.0 μJ/cm(2). The measured power conversion efficiency and differential quantum efficiency of the perovskite photonic crystal laser are 13.8 ± 0.8% and 35.8 ± 5.4%, respectively. Importantly, our approach enables scalability of the thin film lasers to a two-dimensional multielement pixelated array of microlasers which we demonstrate as a proof-of-concept for possible projection display applications.

Novel Applications of High Speed Optical-Injection Locked Lasers

DTIC Science & Technology

2010-07-31

transimpedance amplifiers (TIAs) and optical hybrids. We have also demonstrated digital communications on a 60 GHz optical subcarrier using directly modulated...of the devices. Also included on the mask are both single ended as well as differential transimpedance amplifiers (TIAs). These circuits have a... transimpedance amplifiers with the photo-transistors as the input stage. Simulations predict a transimpedance bandwidth of 120 GHz for the single

Designing new classes of high-power, high-brightness VECSELs

NASA Astrophysics Data System (ADS)

Moloney, J. V.; Zakharian, A. R.; Hader, J.; Koch, Stephan W.

2005-10-01

Optically-pumped vertical external cavity semiconductor lasers offer the exciting possibility of designing kW-class solid state lasers that provide significant advantages over their doped YAG, thin-disk YAG and fiber counterparts. The basic VECSEL/OPSL (optically-pumped semiconductor laser) structure consists of a very thin (approximately 6 micron thick) active mirror consisting of a DBR high-reflectivity stack followed by a multiple quantum well resonant periodic (RPG) structure. An external mirror (reflectivity typically between 94%-98%) provides conventional optical feedback to the active semiconductor mirror chip. The "cold" cavity needs to be designed to take into account the semiconductor sub-cavity resonance shift with temperature and, importantly, the more rapid shift of the semiconductor material gain peak with temperature. Thermal management proves critical in optimizing the device for serious power scaling. We will describe a closed-loop procedure that begins with a design of the semiconductor active epi structure. This feeds into the sub-cavity optimization, optical and thermal transport within the active structure and thermal transport though the various heat sinking elements. Novel schemes for power scaling beyond current record performances will be discussed.

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

PubMed Central

Alismail, Ayman; Wang, Haochuan; Brons, Jonathan; Fattahi, Hanieh

2017-01-01

This is a report on a 100 W, 20 mJ, 1 ps Yb:YAG thin-disk regenerative amplifier. A homemade Yb:YAG thin-disk, Kerr-lens mode-locked oscillator with turn-key performance and microjoule-level pulse energy is used to seed the regenerative chirped-pulse amplifier. The amplifier is placed in airtight housing. It operates at room temperature and exhibits stable operation at a 5 kHz repetition rate, with a pulse-to-pulse stability less than 1%. By employing a 1.5 mm-thick beta barium borate crystal, the frequency of the laser output is doubled to 515 nm, with an average power of 70 W, which corresponds to an optical-to-optical efficiency of 70%. This superior performance makes the system an attractive pump source for optical parametric chirped-pulse amplifiers in the near-infrared and mid-infrared spectral range. Combining the turn-key performance and the superior stability of the regenerative amplifier, the system facilitates the generation of a broadband, CEP-stable seed. Providing the seed and pump of the optical parametric chirped-pulse amplification (OPCPA) from one laser source eliminates the demand of active temporal synchronization between these pulses. This work presents a detailed guide to set up and operate a Yb:YAG thin-disk regenerative amplifier, based on chirped-pulse amplification (CPA), as a pump source for an optical parametric chirped-pulse amplifier. PMID:28745636

Characterization of transimpedance amplifier as optical to electrical converter on designing optical instrumentation

NASA Astrophysics Data System (ADS)

Hanto, D.; Ula, R. K.

2017-05-01

Optical to electrical converter is the main components for designing of the optical instrumentations. In addition, this component is also used as signal conditioning. This component usually consists of a photo detector and amplifier. In this paper, characteristics of commercial amplifiers from Thorlabs PDA50B-EC has been observed. The experiment was conducted by diode laser with power of -5 dBm and wavelength 1310 nm; the optical attenuator to vary optical power from 0 to 60 dB, optical to electrical converter from Thorlabs Amplifier PDA50B-EC; multimode optical fiber to guide the laser; and digital voltmeter to measure the output of converter. The results of the characterization indicate that each channel amplification has a non-linear correlation between optical and electrical parameter; optical conversion measurement range of 20-23 dB to full scale; and different measurement coverage area. If this converter will be used as a part component of optical instrumentation so it should be adjusted suitably with the optical power source. Then, because of the correlation equation is not linear so calculation to determine the interpretation also should be considered in addition to the transfer function of the optical sensor.

Study on the characteristic and application of DFB semiconductor lasers under optical injection for microwave photonics

NASA Astrophysics Data System (ADS)

Pu, Tao; Wang, Wei wei

2018-01-01

In order to apply optical injection effect in Microwave Photonics system, The red-shift effect of the cavity mode of the DFB semiconductor laser under single-frequency optical injection is studied experimentally, and the red-shift curve of the cavity mode is measured. The wavelength-selective amplification property of the DFB semiconductor laser under multi-frequency optical injection is also investigated, and the gain curves for the injected signals in different injection ratios are measured in the experiment. A novel and simple structure to implement a single-passband MPF with wideband tunability based on the wavelength-selective amplification of a DFB semiconductor laser under optical injection is proposed and experimentally demonstrated. MPFs with center frequency tuned from 13 to 41 GHz are realized in the experiment. A wideband and frequency-tunable optoelectronic oscillator based on a directly modulated distributed feedback (DFB) semiconductor laser under optical injection is proposed and experimentally demonstrated. By optical injection, the relaxation oscillation frequency of the DFB laser is enhanced and its high modulation efficiency makes the loop oscillate without the necessary of the electrical filter. An experiment is performed; microwave signals with frequency tuned from 5.98 to 15.22 GHz are generated by adjusting the injection ratio and frequency detuning between the master and slave lasers.

SQUID amplifiers for axion search experiments

NASA Astrophysics Data System (ADS)

Matlashov, Andrei; Schmelz, Matthias; Zakosarenko, Vyacheslav; Stolz, Ronny; Semertzidis, Yannis K.

2018-04-01

In the experiments for dark-matter QCD-axion searches, very weak microwave signals from a low-temperature High-Q resonant cavity should be detected using the highest sensitivity. The best commercial low-noise cryogenic semiconductor amplifiers based on high electron mobility transistors have a lowest noise temperature above 1.0 K, even if they are cooled well below 1 K. Superconducting quantum interference devices can work as microwave amplifiers with temperature noise close to the standard quantum limit. Previous SQUID-based RF amplifiers designed for axion search experiments have a microstrip resonant input coil and are thus called micro-strip SQUID amplifiers or MSAs. Due to the resonant input coupling they usually have narrow bandwidth. In this paper we report on a SQUID-based wideband microwave amplifier fabricated using sub-micron size Josephson junctions with very low capacitance. A single amplifier can be used in a frequency range of approximately 1-5 GHz.

Quantum amplification and quantum optical tapping with squeezed states and correlated quantum states

NASA Technical Reports Server (NTRS)

Ou, Z. Y.; Pereira, S. F.; Kimble, H. J.

1994-01-01

Quantum fluctuations in a nondegenerate optical parametric amplifier (NOPA) are investigated experimentally with a squeezed state coupled into the internal idler mode of the NOPA. Reductions of the inherent quantum noise of the amplifier are observed with a minimum noise level 0.7 dB below the usual noise level of the amplifier with its idler mode in a vacuum state. With two correlated quantum fields as the amplifier's inputs and proper adjustment of the gain of the amplifier, it is shown that the amplifier's intrinsic quantum noise can be completely suppressed so that noise-free amplification is achieved. It is also shown that the NOPA, when coupled to either a squeezed state or a nonclassically correlated state, can realize quantum tapping of optical information.

High sensitivity cascaded preamplifier with an optical bridge structure in Brillouin distributed fiber sensing system

NASA Astrophysics Data System (ADS)

Bi, Weihong; Lin, Hang; Fu, Xinghu; Fu, Guangwei

2013-12-01

Fiber amplifiers such as Erbium-doped fiber amplifier (EDFA) played a key role in developing long-haul transmission system and have been an important element for enabling the development of optical communication system. EDFA amplifies the optical signal directly, without the optical-electric-optical switch and has the advantages such as high gain, broad band, low noise figure. It is widely used in repeaterless submarine system, smart grid and community antenna television system. This article describe the application of optical-fiber amplifiers in distributed optical fiber sensing system, focusing on erbium-doped fiber preamplifiers in modern transmission optical systems. To enhance the measurement range of a spontaneous Brillouin intensity based distributed fiber optical sensor and improve the receiver sensitivity, a two cascaded EDFAs C-band preamplifier with an optical bridge structure is proposed in this paper. The first cascaded EDFA is consisted of a length of 4.3m erbium-doped fiber and pumped in a forward pump light using a laser operating at 975nm. The second one made by using a length of 16m erbium-doped fiber is pumped in a forward pump light which is the remnant pump light of the first cascaded EDFA. At the preamplifier output, DWDM, centered at the signal wavelength, is used to suppress unwanted amplified spontaneous emission. The experimental results show that the two cascade preamplifier with a bridge structure can be used to amplify for input Brillouin backscattering light greater than about -43dBm. The optical gain is characterized and more than 26dB is obtained at 1549.50nm with 300mW pump power.

Fast optical detecting media based on semiconductor nanostructures for recording images obtained using charges of free photocarriers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasherininov, P. G., E-mail: peter.kasherininov@mail.ioffe.ru; Tomasov, A. A.; Beregulin, E. V.

2011-01-15

Available published data on the properties of optical recording media based on semiconductor structures are reviewed. The principles of operation, structure, parameters, and the range of application for optical recording media based on MIS structures formed of photorefractive crystals with a thick layer of insulator and MIS structures with a liquid crystal as the insulator (the MIS LC modulators), as well as the effect of optical bistability in semiconductor structures (semiconductor MIS structures with nanodimensionally thin insulator (TI) layer, M(TI)S nanostructures). Special attention is paid to recording media based on the M(TI)S nanostructures promising for fast processing of highly informativemore » images and to fabrication of optoelectronic correlators of images for noncoherent light.« less

Synthesis and Characterization of Electroresponsive Materials with Applications In: Part I. Second Harmonic Generation. Part II. Organic-Lanthanide Ion Complexes for Electroluminescence and Optical Amplifiers.

NASA Astrophysics Data System (ADS)

Claude, Charles

1995-01-01

Materials for optical waveguides were developed from two different approaches, inorganic-organic composites and soft gel polymers. Inorganic-organic composites were developed from alkoxysilane and organically modified silanes based on nonlinear optical chromophores. Organically modified silanes based on N-((3^' -trialkoxysilyl)propyl)-4-nitroaniline were synthesized and sol-gelled with trimethoxysilane. After a densification process at 190^circC with a corona discharge, the second harmonic of the film was measured with a Nd:YAG laser with a fundamental wavelength of 1064nm, d_{33} = 13pm/V. The decay of the second harmonic was expressed by a stretched bi-exponential equation. The decay time (tau _2) was equal to 3374 hours, and was comparable to nonlinear optical systems based on epoxy/Disperse Orange 1. The processing temperature of the organically modified silane was limited to 200^circC due to the decomposition of the organic chromophore. Soft gel polymers were synthesized and characterized for the development of optical waveguides with dc-electrical field assisted phase-matching. Polymers based on 4-nitroaniline terminated poly(ethylene oxide-co-propylene oxide) were shown to exhibit second harmonic generation that were optically phase-matched in an electrical field. The optical signals were stable and reproducible. Siloxane polymers modified with 1-mercapto-4-nitrobenzene and 1-mercapto-4-methylsulfonylstilbene nonlinear optical chromophores were synthesized. The physical and the linear and nonlinear optical properties of the polymers were characterized. Waveguides were developed from the polymers which were optically phase -matched and had an efficiency of 8.1%. The siloxane polymers exhibited optical phase-matching in an applied electrical field and can be used with a semiconductor laser. Organic lanthanide ion complexes for electroluminescence and optical amplifiers were synthesized and characterized. The complexes were characterized for their thermal and oxidative stability and for their optical properties. Organic-europium ion complexes based on derivatives of 2-benzoyl benzoate are stable to a temperature 70^circ C higher than the europium beta -diketonate complexes. The optical and fluorescence properties of the organic-europium ion complexes were characterized. The methoxy and the t-butyl derivatives of the europium 2-benzoylbenzoate complexes exhibited fluorescence quantum efficiencies that were comparable to europium tris(thenoyl trifluoroacetonate) in methylene chloride but the extinction coefficient was two-thirds of the europium thenoyltrifluoroacetonate complexes. The last complex characterized was the europium bis(diphenylphosphino)imine complex. The complex exhibited thermal stability to 550 ^circC under nitrogen.

Triple-mode single-transistor graphene amplifier and its applications.

PubMed

Yang, Xuebei; Liu, Guanxiong; Balandin, Alexander A; Mohanram, Kartik

2010-10-26

We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.

Long axial imaging range using conventional swept source lasers in optical coherence tomography via re-circulation loops

NASA Astrophysics Data System (ADS)

Bradu, Adrian; Jackson, David A.; Podoleanu, Adrian

2018-03-01

Typically, swept source optical coherence tomography (SS-OCT) imaging instruments are capable of a longer axial range than their camera based (CB) counterpart. However, there are still various applications that would take advantage for an extended axial range. In this paper, we propose an interferometer configuration that can be used to extend the axial range of the OCT instruments equipped with conventional swept-source lasers up to a few cm. In this configuration, the two arms of the interferometer are equipped with adjustable optical path length rings. The use of semiconductor optical amplifiers in the two rings allows for compensating optical losses hence, multiple paths depth reflectivity profiles (Ascans) can be combined axially. In this way, extremely long overall axial ranges are possible. The use of the recirculation loops produces an effect equivalent to that of extending the coherence length of the swept source laser. Using this approach, the achievable axial imaging range in SS-OCT can reach values well beyond the limit imposed by the coherence length of the laser, to exceed in principle many centimeters. In the present work, we demonstrate axial ranges exceeding 4 cm using a commercial swept source laser and reaching 6 cm using an "in-house" swept source laser. When used in a conventional set-up alone, both these lasers can provide less than a few mm axial range.

Nonlinear optical transmittance of semiconductors in the presence of high-intensity radiation fields

NASA Astrophysics Data System (ADS)

Dong, H. M.; Han, F. W.; Duan, Y. F.; Huang, F.; Liu, J. L.

2018-04-01

We developed a systematic theoretical study of nonlinear optical properties of semiconductors. The eight-band kṡp model and the energy-balance equation are employed to calculate the transmission and optical absorption coefficients in the presence of both the linear one-photon absorption and the nonlinear two-photon absorption (TPA) processes. A substantial reduction of the optical transmittance far below the band-gap can be observed under relatively high-intensity radiation fields due to the nonlinear TPA. The TPA-induced optical transmittance decreases with increasing intensity of the radiation fields. Our theoretical results are in line with those observed experimentally. The theoretical approach can be applied to understand the nonlinear optical properties of semiconductors under high-field conditions.

Integrated semiconductor twin-microdisk laser under mutually optical injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zou, Ling-Xiu; Liu, Bo-Wen; Lv, Xiao-Meng

2015-05-11

We experimentally study the characteristics of an integrated semiconductor twin-microdisk laser under mutually optical injection through a connected optical waveguide. Based on the lasing spectra, four-wave mixing, injection locking, and period-two oscillation states are observed due to the mutually optical injection by adjusting the injected currents applied to the two microdisks. The enhanced 3 dB bandwidth is realized for the microdisk laser at the injection locking state, and photonic microwave is obtained from the electrode of the microdisk laser under the period-two oscillation state. The plentifully dynamical states similar as semiconductor lasers subject to external optical injection are realized due tomore » strong optical interaction between the two microdisks.« less

Optical bistability and optical response of an infrared quantum dot hybridized to VO2 nanoparticle

NASA Astrophysics Data System (ADS)

Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

2017-08-01

In this work, we theoretically investigate optical bistability and optical response of a hybrid system consisting of semiconductor quantum dot (SQD) coupled with a vanadium dioxide nanoparticle (VO2NP) in the infrared (IR) regime. The VO2 material exists in semiconductor and metallic phases below and above the critical temperature, respectively where the particle optical properties dramatically change during this phase transition. In our calculations a filling fraction factor controls the VO2NP phase transition when the hybrid system interacts with a laser field. We demonstrate that the switch-up threshold for optical bistability is strongly controlled by filling fraction without changing the structure of the hybrid system. Also, it is shown that, the threshold of optical bistability increases when the VO2NP phases changes from semiconductor to metallic phase. The presented results have the potential to be applied in designing optical switching and optical storage.

Semiconductor-based optical refrigerator

DOEpatents

Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

2002-01-01

Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

Highly sensitive LIDAR with a thumb-sized sensor-head built using an optical fiber preamplifier (3)

NASA Astrophysics Data System (ADS)

Inoue, Daisuke; Ichikawa, Tadashi; Matsubara, Hiroyuki; Kagami, Manabu

2013-05-01

We have developed a LIDAR system with a sensor head which, although it includes a scanning mechanism, is less than 20 cc in size. The system is not only small, but is also highly sensitive. Our LIDAR system is based on time-of-flight measurements, and incorporates an optical fiber. The main feature of our system is the utilization of optical amplifiers for both the transmitter and the receiver, and the optical amplifiers enable us to exceed the detection limit set by thermal noise. In conventional LIDAR systems the detection limit is determined by the thermal noise, because the avalanche photo-diodes (APD) and trans-impedance amplifiers (TIA) that they use detect the received signals directly. In the case of our LIDAR system, the received signal is amplified by an optical fiber amplifier before reaching the photo diode and the TIA. Therefore, our LIDAR system boosts the signal level before the weak incoming signal is depleted by thermal noise. There are conditions under which the noise figure for the combination of an optical fiber amplifier and a photo diode is superior to the noise figure for an avalanche photo diode. We optimized the gains of the optical fiber amplifier and the TIA in our LIDAR system such that it would be capable of detecting a single photon. As a result, the detection limit of our system is determined by shot noise. We have previously demonstrated scanning up to a range of 80 m with this LIDAR system with a 2 mm diameter of receiving lens. We improved the optical amplifier and the peak output power of LIDAR was over 10KW. We redesigned the sensor-head and improved coupling efficiency. As a result, we succeeded in scanning over a range of 100 m. This small and highly sensitive measurement technology shows great potential for use in LIDAR.

Improved Performance Analysis of Free Space Optics Communication Link under Rain Conditions using EDFA Pre-amplifier

NASA Astrophysics Data System (ADS)

Singh, Mehtab

2018-04-01

Free Space Optics (FSO) also known as Optical Wireless Communication (OWC) is a communication technology in which free space/air is used as the propagation medium and optical signals are used as the information carriers. One of the most crucial factors which degrade the performance of FSO link is the signal attenuation due to different atmospheric weather conditions such as haze, rain, storm, and fog. In this paper, an improved performance analysis of a 2.5 Gbps FSO link under rain conditions has been reported using Erbium-Doped Fiber Amplifier (EDFA) as a pre-amplifier. The results show that the maximum link distance for an FSO link under rain weather conditions with acceptable performance levels (Q ˜6 and BER ≤ 10-9 in the absence of EDFA pre-amplifier is 1,250 m which increases to 1,675 m with the use of EDFA pre-amplifier.

Diode amplifier of modulated optical beam power

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'yachkov, N V; Bogatov, A P; Gushchik, T I

2014-11-30

Analytical relations are obtained between characteristics of modulated light at the output and input of an optical diode power amplifier operating in the highly saturated gain regime. It is shown that a diode amplifier may act as an amplitude-to-phase modulation converter with a rather large bandwidth (∼10 GHz). The low sensitivity of the output power of the amplifier to the input beam power and its high energy efficiency allow it to be used as a building block of a high-power multielement laser system with coherent summation of a large number of optical beams. (lasers)

Dispersion management for a sub-10-fs, 10 TW optical parametric chirped-pulse amplifier.

PubMed

Tavella, Franz; Nomura, Yutaka; Veisz, Laszlo; Pervak, Vladimir; Marcinkevicius, Andrius; Krausz, Ferenc

2007-08-01

We report the amplification of three-cycle, 8.5 fs optical pulses in a near-infrared noncollinear optical parametric chirped-pulse amplifier (OPCPA) up to energies of 80 mJ. Improved dispersion management in the amplifier by means of a combination of reflection grisms and a chirped-mirror stretcher allowed us to recompress the amplified pulses to within 6% of their Fourier limit. The novel ultrabroad, ultraprecise dispersion control technology presented in this work opens the way to scaling multiterawatt technology to even shorter pulses by optimizing the OPCPA bandwidth.

Optical amplifiers for coherent lidar

NASA Technical Reports Server (NTRS)

Fork, Richard

1996-01-01

We examine application of optical amplification to coherent lidar for the case of a weak return signal (a number of quanta of the return optical field close to unity). We consider the option that has been explored to date, namely, incorporation of an optical amplifier operated in a linear manner located after reception of the signal and immediately prior to heterodyning and photodetection. We also consider alternative strategies where the coherent interaction, the nonlinear processes, and the amplification are not necessarily constrained to occur in the manner investigated to date. We include the complications that occur because of mechanisms that occur at the level of a few, or one, quantum excitation. Two factors combine in the work to date that limit the value of the approach. These are: (1) the weak signal tends to require operation of the amplifier in the linear regime where the important advantages of nonlinear optical processing are not accessed, (2) the linear optical amplifier has a -3dB noise figure (SN(out)/SN(in)) that necessarily degrades the signal. Some improvement is gained because the gain provided by the optical amplifier can be used to overcome losses in the heterodyned process and photodetection. The result, however, is that introduction of an optical amplifier in a well optimized coherent lidar system results in, at best, a modest improvement in signal to noise. Some improvement may also be realized on incorporating more optical components in a coherent lidar system for purely practical reasons. For example, more compact, lighter weight, components, more robust alignment, or more rapid processing may be gained. We further find that there remain a number of potentially valuable, but unexplored options offered both by the rapidly expanding base of optical technology and the recent investigation of novel nonlinear coherent interference phenomena occurring at the single quantum excitation level. Key findings are: (1) insertion of linear optical amplifiers in well optimized conventional lidar systems offers modest improvements, at best, (2) the practical advantages of optical amplifiers, especially fiber amplifiers, such as ease of alignment, compactness, efficiency, lightweight, etc., warrant further investigation for coherent lidar, (3) the possibility of more fully optical lidar systems should be explored, (4) advantages gained by use of coherent interference of optical fields at the level of one, or a few, signal quanta should be explored, (5) amplification without inversion, population trapping, and use of electromagnetic induced transparency warrant investigation in connection with coherent lidar, (6) these new findings are probably more applicable to earth related NASA work, although applications to deep space should not be excluded, and (7) our own work in the Ultrafast Laboratory at UAH along some of the above lines of investigation, may be useful.

Linearly polarized fiber amplifier

DOEpatents

Kliner, Dahv A.; Koplow, Jeffery P.

2004-11-30

Optically pumped rare-earth-doped polarizing fibers exhibit significantly higher gain for one linear polarization state than for the orthogonal state. Such a fiber can be used to construct a single-polarization fiber laser, amplifier, or amplified-spontaneous-emission (ASE) source without the need for additional optical components to obtain stable, linearly polarized operation.

co2amp: A software program for modeling the dynamics of ultrashort pulses in optical systems with CO 2 amplifiers

DOE PAGES

Polyanskiy, Mikhail N.

2015-01-01

We describe a computer code for simulating the amplification of ultrashort mid-infrared laser pulses in CO 2 amplifiers and their propagation through arbitrary optical systems. This code is based on a comprehensive model that includes an accurate consideration of the CO 2 active medium and a physical optics propagation algorithm, and takes into account the interaction of the laser pulse with the material of the optical elements. Finally, the application of the code for optimizing an isotopic regenerative amplifier is described.

338-GHz Semiconductor Amplifier Module

NASA Technical Reports Server (NTRS)

Samoska, Lorene A.; Gaier, Todd C.; Soria, Mary M.; Fung, King Man; Rasisic, Vesna; Deal, William; Leong, Kevin; Mei, Xiao Bing; Yoshida, Wayne; Liu, Po-Hsin;

Amplification and generation of surface plasmon polaritons in a semiconductor film - dielectric structure

NASA Astrophysics Data System (ADS)

Abramov, A. S.; Zolotovskii, I. O.; Moiseev, S. G.; Sementsov, D. I.

2018-01-01

The peculiarities of propagation and amplification of surface waves of plasmon polariton type in a planar semiconductor film - dielectric structure are considered for the THz frequency region, with allowance for dissipation in a semiconductor. Two spectral regions are found, where the group velocity of surface plasmon polaritons is negative. It is shown that in these regions the structure can be considered as an amplifying waveguide with distributed feedback and a high gain with respect to the reflected and transmitted signals. The possibility of generation of electromagnetic radiation in such structures is established.

Resistor-less charge sensitive amplifier for semiconductor detectors

NASA Astrophysics Data System (ADS)

Pelczar, K.; Panas, K.; Zuzel, G.

2016-11-01

A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low-pass filter. Both the analog-with a standard spectroscopy amplifier and a multi-channel analyzer-and the digital-by applying a Flash Analog to Digital Converter-signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered 60Co 1332.5 keV gamma line.

Photonic Arbitrary Waveform Generation Technology

DTIC Science & Technology

2006-06-01

locked external- cavity semiconductor diode ring laser “, Optics Letters, Vol. 27, No. 9 , 719-721, (2002). [22] S. Gee, F. Quinlan, S. Ozharar... optical pulses that one is accustomed to. Modelocked semiconductor lasers are used to generate a set of phase locked optical frequencies on a periodic...The corresponding optical spectrum of the laser consists of a comb of periodically spaced, phase - locked

Semiconductor devices for optical communications in 1 micron band of wavelength. [gallium indium arsenide phosphide lasers and diodes

NASA Technical Reports Server (NTRS)

Suematsu, Y.; Iga, K.

1980-01-01

Crystal growth and the characteristics of semiconductor lasers and diodes for the long wavelength band used in optical communications are examined. It is concluded that to utilize the advantages of this band, it is necessary to have a large scale multiple wavelength communication, along with optical cumulative circuits and optical exchangers.

Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

NASA Astrophysics Data System (ADS)

Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

2018-02-01

We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Editor)

1992-01-01

The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.

Semiconductor Lasers and Their Application in Optical Fiber Communication.

ERIC Educational Resources Information Center

Agrawal, Govind P.

1985-01-01

Working principles and operating characteristics of the extremely compact and highly efficient semiconductor lasers are explained. Topics include: the p-n junction; Fabry-Perot cavity; heterostructure semiconductor lasers; materials; emission characteristics; and single-frequency semiconductor lasers. Applications for semiconductor lasers include…

Photonic Switching Devices Using Light Bullets

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

1999-01-01

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

Doping of wide-bandgap titanium-dioxide nanotubes: optical, electronic and magnetic properties

NASA Astrophysics Data System (ADS)

Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Cerkovnik, Logan Jerome; Nagpal, Prashant

2014-08-01

Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications.Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO2) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magnetic dopants were incorporated into the hollow nanotubes, and from detailed studies it is shown that the doping level can be easily tuned from low to heavily-doped semiconductors. Using desired dopants - electronic (p- or n-doped), optical (ultraviolet bandgap to infrared absorption in co-doped nanotubes), and magnetic (from paramagnetic to ferromagnetic) properties can be tailored, and these technologically important nanotubes can be useful for a variety of applications in photovoltaics, display technologies, photocatalysis, and spintronic applications. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr02417f

Optical XOR gate

DOEpatents

Vawter, G. Allen

2013-11-12

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Optical NOR gate

DOEpatents

Skogen, Erik J [Albuquerque, NM; Tauke-Pedretti, Anna [Albuquerque, NM

2011-09-06

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Compact sub-nanosecond pulse seed source with diode laser driven by a high-speed circuit

NASA Astrophysics Data System (ADS)

Wang, Xiaoqian; Wang, Bo; Wang, Junhua; Cheng, Wenyong

2018-06-01

A compact sub-nanosecond pulse seed source with 1550 nm diode laser (DL) was obtained by employing a high-speed circuit. The circuit mainly consisted of a short pulse generator and a short pulse driver. The short pulse generator, making up of a complex programmable logic device (CPLD), a level translator, two programmable delay chips and an AND gate chip, output a triggering signal to control metal-oxide-semiconductor field-effect transistor (MOSFET) switch of the short pulse driver. The MOSFET switch with fast rising time and falling time both shorter than 1 ns drove the DL to emit short optical pulses. Performances of the pulse seed source were tested. The results showed that continuously adjustable repetition frequency ranging from 500 kHz to 100 MHz and pulse duration in the range of 538 ps to 10 ns were obtained, respectively. 537 μW output was obtained at the highest repetition frequency of 100 MHz with the shortest pulse duration of 538 ps. These seed pulses were injected into an fiber amplifier, and no optical pulse distortions were found.

A novel semiconductor-based, fully incoherent amplified spontaneous emission light source for ghost imaging

PubMed Central

Hartmann, Sébastien; Elsäßer, Wolfgang

2017-01-01

Initially, ghost imaging (GI) was demonstrated with entangled light from parametric down conversion. Later, classical light sources were introduced with the development of thermal light GI concepts. State-of-the-art classical GI light sources rely either on complex combinations of coherent light with spatially randomizing optical elements or on incoherent lamps with monochromating optics, however suffering strong losses of efficiency and directionality. Here, a broad-area superluminescent diode is proposed as a new light source for classical ghost imaging. The coherence behavior of this spectrally broadband emitting opto-electronic light source is investigated in detail. An interferometric two-photon detection technique is exploited in order to resolve the ultra-short correlation timescales. We thereby quantify the coherence time, the photon statistics as well as the number of spatial modes unveiling a complete incoherent light behavior. With a one-dimensional proof-of-principle GI experiment, we introduce these compact emitters to the field which could be beneficial for high-speed GI systems as well as for long range GI sensing in future applications. PMID:28150737

Multiple excitation regenerative amplifier inertial confinement system

DOEpatents

George, V.E.; Haas, R.A.; Krupke, W.F.; Schlitt, L.G.

1980-05-27

The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation. 11 figs.

Multiple excitation regenerative amplifier inertial confinement system

DOEpatents

George, Victor E. [Livermore, CA; Haas, Roger A. [Pleasanton, CA; Krupke, William F. [Pleasanton, CA; Schlitt, Leland G. [Livermore, CA

1980-05-27

The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation.

Refinement of Er3+-doped hole-assisted optical fiber amplifier.

PubMed

D'Orazio, A; De Sario, M; Mescia, L; Petruzzelli, V; Prudenzano, F

2005-12-12

This paper deals with design and refinement criteria of erbium doped hole-assisted optical fiber amplifiers for applications in the third band of fiber optical communication. The amplifier performance is simulated via a model which takes into account the ion population rate equations and the optical power propagation. The electromagnetic field profile of the propagating modes is carried out by a finite element method solver. The effects of the number of cladding air holes on the amplifier performance are investigated. To this aim, four different erbium doped hole-assisted lightguide fiber amplifiers having a different number of cladding air holes are designed and compared. The simulated optimal gain, optimal length, and optimal noise fig. are discussed. The numerical results highlight that, by increasing the number of air holes, the gain can be improved, thus obtaining a shorter amplifier length. For the erbium concentration NEr=1.8x1024 ions/m3, the optimal gain G(Lopt) increases up to ~2dB by increasing the number of the air holes from M=4 to M=10.

Ultrahigh-speed phaselocked-loop type clock recovery circuit using a travelling-wave laser diode amplifier as a 50 GHz phase detector

NASA Astrophysics Data System (ADS)

Kawanishi, S.; Takara, H.; Saruwatari, M.; Kitoh, T.

1993-09-01

Successful operation of a phase-locked loop is demonstrated using a traveling-wave laser-diode amplifier as a 50 GHz phase detector. Optical gain modulation in the laser diode amplifier and an all-optical clock multiplication technique using a silica-based guided-wave optical circuit are used to achieve the extremely high-speed operation. Also discussed is the possibility of more than 100 GHz operation.

Picosecond laser with 11 W output power at 1342 nm based on composite multiple doping level Nd:YVO4 crystal

NASA Astrophysics Data System (ADS)

Rodin, Aleksej M.; Grishin, Mikhail; Michailovas, Andrejus

2016-01-01

We report results of design and optimization of high average output power picosecond and nanosecond laser operating at 1342 nm wavelength. Developed for selective micromachining, this DPSS laser is comprised of master oscillator, regenerative amplifier and output pulse control module. Passively mode-locked by means of semiconductor saturable absorber mirror and pumped with 808 nm wavelength Nd:YVO4 master oscillator emits 12.5 ps pulses at repetition rate of 55 MHz with average output power of ∼100 mW. The four-pass confocal delay line forms a longest part of the oscillator cavity in order to suppress thermo-mechanical misalignment. Picked from the train seed pulses were injected to the cavity of regenerative amplifier based on composite Nd:YVO4 crystal with diffusion-bonded segments of multiple Nd doping concentration end-pumped at 880 nm wavelength. Laser produces pulses of ∼13 ps duration at 300 kHz repetition rate with average output power of 11 W and nearly diffraction limited beam quality of M2∼1.03. Attained high peak power ∼2.8 MW facilitates conversion to the 2nd, 3rd and 6th harmonics at 671 nm, 447 nm and 224 nm wavelengths with 80%, 50% and 15% efficiency respectively. Without seeding the regenerative amplifier transforms to electro-optically cavity-dumped Q-switched laser providing 10 ns output pulses at high repetition rates with beam propagation factor of M2∼1.06.

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

Measurement of the photon statistics and the noise figure of a fiber-optic parametric amplifier.

PubMed

Voss, Paul L; Tang, Renyong; Kumar, Prem

2003-04-01

We report measurement of the noise statistics of spontaneous parametric fluorescence in a fiber parametric amplifier with single-mode, single-photon resolution. We employ optical homodyne tomography for this purpose, which also provides a self-calibrating measurement of the noise figure of the amplifier. The measured photon statistics agree with quantum-mechanical predictions, and the amplifier's noise figure is found to be almost quantum limited.

A 94GHz Temperature Compensated Low Noise Amplifier in 45nm Silicon-on-Insulator Complementary Metal-Oxide Semiconductor (SOI CMOS)

DTIC Science & Technology

2014-01-01

ring oscillator based temperature sensor will be designed to compensate for gain variations over temperature. For comparison to a competing solution...Simulated (Green) Capacitance of the GSG Pads ........................ 9 Figure 6: Die Picture and Schematic of the L-2L Coplanar Waveguides...complementary metal-oxide-semiconductor (CMOS) technology. A ring oscillator based temperature sensor was designed to compensate for gain variations

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1994-01-01

Optical thermometry is a growing technological field which exploits the ability of certain materials to change their optical properties with temperature. A subclass of such materials are those which change their color as a reversible and reproducible function of temperature. These materials are thermochromic. This invention is a composition to measure temperature utilizing thermochromic semiconductors.

Nd:YLF laser for airborne/spaceborne laser ranging

NASA Technical Reports Server (NTRS)

Dallas, Joseph L.; Selker, Mark D.

1993-01-01

In order to meet the need for light weight, long lifetime, efficient, short pulse lasers, a diode-pumped, Nd:YLF oscillator and regenerative amplifier is being developed. The anticipated output is 20 mJ per 10 picosecond pulse, running at a repetition rate of 40 Hz. The fundamental wavelength is at 1047 nm. The oscillator is pumped by a single laser diode bar and mode locked using an electro-optic, intra-cavity phase modulator. The output from the oscillator is injected as a seed into the regenerative amplifier. The regenerative amplifier laser crystal is optically pumped by two 60W quasi-cw laser diode bars. Each diode is collimated using a custom designed micro-lens bar. The injected 10 ps pulse from the oscillator is kept circulating within the regenerative amplifier until this nanojoule level seed pulse is amplified to 2-3 millijoules. At this point the pulse is ejected and sent on to a more standard single pass amplifier where the energy is boosted to 20 mJ. The footprint of the entire laser (oscillator-regenerative amplifier-amplifier) will fit on a 3 by 4 ft. optical pallet.

Assessing the performance of the Tran-Blaha modified Becke-Johnson exchange potential for optical constants of semiconductors in the ultraviolet-visible light region

NASA Astrophysics Data System (ADS)

Nakano, Kousuke; Sakai, Tomohiro

2018-01-01

We report on the performance of density functional theory (DFT) with the Tran-Blaha modified Becke-Johnson exchange potential and the random phase approximation dielectric function for optical constants of semiconductors in the ultraviolet-visible (UV-Vis) light region. We calculate optical bandgaps Eg, refractive indices n, and extinction coefficients k of 70 semiconductors listed in the Handbook of Optical Constants of Solids [(Academic Press, 1985), Vol. 1; (Academic Press, 1991), Vol. 2; and (Academic Press, 1998), Vol. 3] and compare the results with experimental values. The results show that the calculated bandgaps and optical constants agree well with the experimental values to within 0.440 eV for Eg, 0.246-0.299 for n, and 0.207-0.598 for k in root mean squared error (RMSE). The small values of the RMSEs indicate that the optical constants of semiconductors in the UV-Vis region can be quantitatively predicted even by a low-cost DFT calculation of this type.

High power diode laser Master Oscillator-Power Amplifier (MOPA)

NASA Technical Reports Server (NTRS)

Andrews, John R.; Mouroulis, P.; Wicks, G.

1994-01-01

High power multiple quantum well AlGaAs diode laser master oscillator - power amplifier (MOPA) systems were examined both experimentally and theoretically. For two pass operation, it was found that powers in excess of 0.3 W per 100 micrometers of facet length were achievable while maintaining diffraction-limited beam quality. Internal electrical-to-optical conversion efficiencies as high as 25 percent were observed at an internal amplifier gain of 9 dB. Theoretical modeling of multiple quantum well amplifiers was done using appropriate rate equations and a heuristic model of the carrier density dependent gain. The model gave a qualitative agreement with the experimental results. In addition, the model allowed exploration of a wider design space for the amplifiers. The model predicted that internal electrical-to-optical conversion efficiencies in excess of 50 percent should be achievable with careful system design. The model predicted that no global optimum design exists, but gain, efficiency, and optical confinement (coupling efficiency) can be mutually adjusted to meet a specific system requirement. A three quantum well, low optical confinement amplifier was fabricated using molecular beam epitaxial growth. Coherent beam combining of two high power amplifiers injected from a common master oscillator was also examined. Coherent beam combining with an efficiency of 93 percent resulted in a single beam having diffraction-limited characteristics. This beam combining efficiency is a world record result for such a system. Interferometric observations of the output of the amplifier indicated that spatial mode matching was a significant factor in the less than perfect beam combining. Finally, the system issues of arrays of amplifiers in a coherent beam combining system were investigated. Based upon experimentally observed parameters coherent beam combining could result in a megawatt-scale coherent beam with a 10 percent electrical-to-optical conversion efficiency.

Semiconductor Nanomaterials-Based Fluorescence Spectroscopic and Matrix-Assisted Laser Desorption/Ionization (MALDI) Mass Spectrometric Approaches to Proteome Analysis

PubMed Central

Kailasa, Suresh Kumar; Cheng, Kuang-Hung; Wu, Hui-Fen

2013-01-01

Semiconductor quantum dots (QDs) or nanoparticles (NPs) exhibit very unusual physico-chemcial and optical properties. This review article introduces the applications of semiconductor nanomaterials (NMs) in fluorescence spectroscopy and matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) for biomolecule analysis. Due to their unique physico-chemical and optical properties, semiconductors NMs have created many new platforms for investigating biomolecular structures and information in modern biology. These semiconductor NMs served as effective fluorescent probes for sensing proteins and cells and acted as affinity or concentrating probes for enriching peptides, proteins and bacteria proteins prior to MALDI-MS analysis. PMID:28788422

III-V semiconductor resonators: A new strategy for broadband light perfect absorbers

NASA Astrophysics Data System (ADS)

Liu, Xiaoshan; Chen, Jian; Liu, Jiasong; Huang, Zhenping; Yu, Meidong; Pan, Pingping; Liu, Zhengqi

2017-11-01

Broadband light perfect absorbers (BPAs) are desirable for applications in numerous optoelectronics devices. In this work, a semiconductor-based broadband light perfect absorber (S-BPA) has been numerically demonstrated by utilizing plasmonlike resonances of high-index semiconductor resonators. A maximal absorption of 99.7% is observed in the near-infrared region. By taking the absorption above 80% into account, the spectral bandwidth reaches 340 nm. The absorption properties mainly originate from the optical cavity modes induced by the cylinder resonators and ultrathin semiconductor film. These optical properties and simple structural features can maintain the absorber platform with wide applications in semiconductor optoelectronics.

External Cavity Coherent Transmitter Modules

DTIC Science & Technology

1990-11-01

Lasers 141 Tunability Aspects of DFB External Cavity Semiconductor Lasers Harish R. D. Sunak & Clark P. Engert Fiber Optical Communications Laboratory...Linewidth Considerations for DFB External Cavity Semiconductor Lasers Harish R. D. Sunak & Clark P. Engert Fiber Optical Communications Laboratory

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

NASA Technical Reports Server (NTRS)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat D.

2008-01-01

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

An oscilloscope spot intensifier, to improve photographic recordings of action potentials.

PubMed

Evans, M H

1985-06-01

A circuit diagram is shown for a semiconductor device to intensify the brightness of an oscilloscope during the rapidly rising and falling phases of signals such as action potentials. Brightening pulses proportional in amplitude to the rate of change in the Y-axis are available for connection to an oscilloscope with an external intensity ('Z') modulation input. The circuit requires one transistor, one dual operational amplifier and two single fast operational amplifiers.

Microwave Semiconductor Equipment Produced in Poland,

DTIC Science & Technology

1984-01-20

was started on varactors for parametric amplifiers, which took place in the Institute for Basic Problems of Technology of the PAN [1. The research unit...technology of varactors intended for parametric amplifiers and harmonic generators. As a result of this a series of types of germanium, silicon and gallium...arsenide varactors were produced [2-141. These varactors were used for example in Avia A and Avia B radar. The working out of the production of

REVIEW ARTICLE: Harmonically mode-locked semiconductor-based lasers as high repetition rate ultralow noise pulse train and optical frequency comb sources

NASA Astrophysics Data System (ADS)

Quinlan, F.; Ozharar, S.; Gee, S.; Delfyett, P. J.

2009-10-01

Recent experimental work on semiconductor-based harmonically mode-locked lasers geared toward low noise applications is reviewed. Active, harmonic mode-locking of semiconductor-based lasers has proven to be an excellent way to generate 10 GHz repetition rate pulse trains with pulse-to-pulse timing jitter of only a few femtoseconds without requiring active feedback stabilization. This level of timing jitter is achieved in long fiberized ring cavities and relies upon such factors as low noise rf sources as mode-lockers, high optical power, intracavity dispersion management and intracavity phase modulation. When a high finesse etalon is placed within the optical cavity, semiconductor-based harmonically mode-locked lasers can be used as optical frequency comb sources with 10 GHz mode spacing. When active mode-locking is replaced with regenerative mode-locking, a completely self-contained comb source is created, referenced to the intracavity etalon.

Demonstration of the spin solar cell and spin photodiode effect

PubMed Central

Endres, B.; Ciorga, M.; Schmid, M.; Utz, M.; Bougeard, D.; Weiss, D.; Bayreuther, G.; Back, C.H.

2013-01-01

Spin injection and extraction are at the core of semiconductor spintronics. Electrical injection is one method of choice for the creation of a sizeable spin polarization in a semiconductor, requiring especially tailored tunnel or Schottky barriers. Alternatively, optical orientation can be used to generate spins in semiconductors with significant spin-orbit interaction, if optical selection rules are obeyed, typically by using circularly polarized light at a well-defined wavelength. Here we introduce a novel concept for spin injection/extraction that combines the principle of a solar cell with the creation of spin accumulation. We demonstrate that efficient optical spin injection can be achieved with unpolarized light by illuminating a p-n junction where the p-type region consists of a ferromagnet. The discovered mechanism opens the window for the optical generation of a sizeable spin accumulation also in semiconductors without direct band gap such as Si or Ge. PMID:23820766

Absorption properties of metal-semiconductor hybrid nanoparticles.

PubMed

Shaviv, Ehud; Schubert, Olaf; Alves-Santos, Marcelo; Goldoni, Guido; Di Felice, Rosa; Vallée, Fabrice; Del Fatti, Natalia; Banin, Uri; Sönnichsen, Carsten

2011-06-28

The optical response of hybrid metal-semiconductor nanoparticles exhibits different behaviors due to the proximity between the disparate materials. For some hybrid systems, such as CdS-Au matchstick-shaped hybrids, the particles essentially retain the optical properties of their original components, with minor changes. Other systems, such as CdSe-Au dumbbell-shaped nanoparticles, exhibit significant change in the optical properties due to strong coupling between the two materials. Here, we study the absorption of these hybrids by comparing experimental results with simulations using the discrete dipole approximation method (DDA) employing dielectric functions of the bare components as inputs. For CdS-Au nanoparticles, the DDA simulation provides insights on the gold tip shape and its interface with the semiconductor, information that is difficult to acquire by experimental means alone. Furthermore, the qualitative agreement between DDA simulations and experimental data for CdS-Au implies that most effects influencing the absorption of this hybrid system are well described by local dielectric functions obtained separately for bare gold and CdS nanoparticles. For dumbbell shaped CdSe-Au, we find a shortcoming of the electrodynamic model, as it does not predict the "washing out" of the optical features of the semiconductor and the metal observed experimentally. The difference between experiment and theory is ascribed to strong interaction of the metal and semiconductor excitations, which spectrally overlap in the CdSe case. The present study exemplifies the employment of theoretical approaches used to describe the optical properties of semiconductors and metal nanoparticles, to achieve better understanding of the behavior of metal-semiconductor hybrid nanoparticles.

Wide tuning range wavelength-swept laser with a single SOA at 1020 nm for ultrahigh resolution Fourier-domain optical coherence tomography.

PubMed

Lee, Sang-Won; Song, Hyun-Woo; Jung, Moon-Youn; Kim, Seung-Hwan

2011-10-24

In this study, we demonstrated a wide tuning range wavelength-swept laser with a single semiconductor optical amplifier (SOA) at 1020 nm for ultrahigh resolution, Fourier-domain optical coherence tomography (UHR, FD-OCT). The wavelength-swept laser was constructed with an external line-cavity based on a Littman configuration. An optical wavelength selection filter consisted of a grating, a telescope, and a polygon scanner. Before constructing the optical wavelength selection filter, we observed that the optical power, the spectrum bandwidth, and the center wavelength of the SOA were affected by the temperature of the thermoelectric (TE) cooler in the SOA mount as well as the applied current. Therefore, to obtain a wide wavelength tuning range, we adjusted the temperature of the TE cooler in the SOA mount. When the temperature in the TE cooler was 9 °C, our swept source had a tuning range of 142 nm and a full-width at half-maximum (FWHM) of 121.5 nm at 18 kHz. The measured instantaneous spectral bandwidth (δλ) is 0.085 nm, which was measured by an optical spectrum analyzer with a resolution bandwidth of 0.06 nm. This value corresponds to an imaging depth of 3.1 mm in air. Additionally, the averaged optical power of our swept source was 8.2 mW. In UHR, FD/SS-OCT using our swept laser, the measured axial resolution was 4.0 μm in air corresponding to 2.9 μm in tissue (n = 1.35). The sensitivity was measured to be 93.1 dB at a depth of 100 μm. Finally, we obtained retinal images (macular and optic disk) and a corneal image. © 2011 Optical Society of America

Towards a THz backward wave amplifier in European OPTHER project

NASA Astrophysics Data System (ADS)

Dispenza, M.; Brunetti, F.; Cojocaru, C.-S.; de Rossi, A.; Di Carlo, A.; Dolfi, D.; Durand, A.; Fiorello, A. M.; Gohier, A.; Guiset, P.; Kotiranta, M.; Krozer, V.; Legagneux, P.; Marchesin, R.; Megtert, S.; Bouamrane, F.; Mineo, M.; Paoloni, C.; Pham, K.; Schnell, J. P.; Secchi, A.; Tamburri, E.; Terranova, M. L.; Ulisse, G.; Zhurbenko, V.

2010-10-01

Within the EC funded international project OPTHER (OPtically Driven TeraHertz AmplifiERs) a considerable technological effort is being undertaken, in terms of technological development, THz device design and integration. The ultimate goal is to develop a miniaturised THz amplifier based on vacuum-tube principles The main target specifications of the OPTHER amplifier are the following: - Operating frequency: in the band 0.3 to 2 THz - Output power: > 10 mW ( 10 dBm ) - Gain: 10 to 20 dB. The project is in the middle of its duration. Design and simulations have shown that these targets can be met with a proper device configuration and careful optimization of the different parts of the amplifier. Two parallel schemes will be employed for amplifier realisation: THz Drive Signal Amplifier and Optically Modulated Beam THz Amplifier.

Semiconductor optoelectronic devices for free-space optical communications

NASA Technical Reports Server (NTRS)

Katz, J.

1983-01-01

The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

Real-time monitoring and fault locating using amplified spontaneous emission noise reflection for tree-structured Ethernet passive optical networks

NASA Astrophysics Data System (ADS)

Naim, Nani Fadzlina; Ab-Rahman, Mohammad Syuhaimi; Kamaruddin, Nur Hasiba; Bakar, Ahmad Ashrif A.

2013-09-01

Nowadays, optical networks are becoming dense while detecting faulty branches in the tree-structured networks has become problematic. Conventional methods are inconvenient as they require an engineer to visit the failure site to check the optical fiber using an optical time-domain reflectometer. An innovative monitoring technique for tree-structured network topology in Ethernet passive optical networks (EPONs) by using the erbium-doped fiber amplifier to amplify the traffic signal is demonstrated, and in the meantime, a residual amplified spontaneous emission spectrum is used as the input signal to monitor the optical cable from the central office. Fiber Bragg gratings with distinct center wavelengths are employed to reflect the monitoring signals. Faulty branches of the tree-structured EPONs can be identified using a simple and low-cost receiver. We will show that this technique is capable of providing monitoring range up to 32 optical network units using a power meter with a sensitivity of -65 dBm while maintaining the bit error rate of 10-13.

151-km single-end phase-sensitive optical time-domain reflectometer assisted by optical repeater

NASA Astrophysics Data System (ADS)

Song, Muping; Zhu, Weiji; Xia, Qiaolan; Yin, Cong; Lu, Yan; Wu, Ying; Zhuang, Shouwang

2018-02-01

A phase-sensitive optical time-domain reflectometry (ϕOTDR) system that can detect intrusion over 150 km is presented. The ϕOTDR system uses nonbalanced optical repeaters to extend the sensing distance. The repeater consists of two erbium-doped optical fiber amplifiers (EDFAs) and one Raman amplifier (RA). One EDFA power amplifier amplifies the forward-transmitting pulse, and one EDFA preamplifier is used for the backscattering signal, respectively. The RA helps keeping the power along the fiber stable. The optical repeater is installed at the connection of two adjacent fibers to compensate the power decline due to fiber loss. It is easy to install the repeater midway among the fiber links in the system for longer-distance sensing since there is no need of modifying the original sensing system. The theoretical analysis of the repeater is given to describe its effect on the distributed sensing. In experiments, several ϕOTDR traces show a good agreement with theoretical results. Using the optical repeater, 35-Hz vibration at 151 km is successfully measured with signal-to-noise ratio of 8 dB without extra signal processing.

SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Semiconductor-laser Fourier processors of electric signals

NASA Astrophysics Data System (ADS)

Blok, A. S.; Bukhenskii, A. F.; Krupitskii, É. I.; Morozov, S. V.; Pelevin, V. Yu; Sergeenko, T. N.; Yakovlev, V. I.

1995-10-01

An investigation is reported of acousto-optical and fibre-optic Fourier processors of electric signals, based on semiconductor lasers. A description is given of practical acousto-optical processors with an analysis band 120 MHz wide, a resolution of 200 kHz, and 7 cm × 8 cm × 18 cm dimensions. Fibre-optic Fourier processors are considered: they represent a new class of devices which are promising for the processing of gigahertz signals.

Integrated InAs/InP quantum-dot coherence comb lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lu, Zhenguo; Liu, Jiaren; Poole, Philip J.; Song, Chun-Ying; Webber, John; Mao, Linda; Chang, Shoude; Ding, Heping; Barrios, Pedro J.; Poitras, Daniel; Janz, Siegfried

2017-02-01

Current communication networks needs to keep up with the exponential growth of today's internet traffic, and telecommunications industry is looking for radically new integrated photonics components for new generation optical networks. We at National Research Council (NRC) Canada have successfully developed nanostructure InAs/InP quantum dot (QD) coherence comb lasers (CCLs) around 1.55 μm. Unlike uniform semiconductor layers in most telecommunication lasers, in these QD CCLs light is emitted and amplified by millions of semiconductor QDs less than 60 nm in diameter. Each QD acts like an isolated light source acting independently of its neighbours, and each QD emits light at its own unique wavelength. The end result is a QD CCL is more stable and has ultra-low timing jitter. But most importantly, a single QD CCL can simultaneously produce 50 or more separate laser beams at distinct wavelengths over the telecommunications C-band. Utilizing those unique properties we have put considerable effort well to design, grow and fabricate InAs/InP QD gain materials. After our integrated packaging and using electrical feedback-loop control systems, we have successfully demonstrated ultra-low intensity and phase noise, frequency-stabilized integrated QD CCLs with the repetition rates from 10 GHz to 100 GHz and the total output power up to 60 mW at room temperature. We have investigated their relative intensity noises, phase noises, RF beating signals and other performance of both filtered individual channel and the whole CCLs. Those highly phase-coherence comb lasers are the promising candidates for flexible bandwidth terabit coherent optical networks and signal processing applications.

Towards a Narrowband Photonic Sigma-Delta Digital Antenna

DTIC Science & Technology

2012-02-01

High Speed Photodiode/ Amplifier 26 G no amplifier 50 k transimpedance amplifier N/A 12 ps rise time 50 Ω output impedance HP 8447A Amplifier ......Response for the optical amplifier as a function of input drive current

New nonlinear optical effect: self-reflection phenomenon due to exciton-biexciton-light interaction in semiconductors

NASA Astrophysics Data System (ADS)

Khadzhi, P. I.; Lyakhomskaya, K. D.; Nadkin, L. Y.; Markov, D. A.

2002-05-01

The characteristic peculiarities of the self-reflection of a strong electromagnetic wave in a system of coherent excitons and biexcitons due to the exciton-photon interaction and optical exciton-biexciton conversion in semiconductors were investigated as one of the manifestations of nonlinear optical Stark-effect. It was found that a monotonously decreasing standing wave with an exponential decreasing spatial tail is formed in the semiconductor. Under the action of the field of a strong pulse, an optically homogeneous medium is converted, into the medium with distributed feedback. The appearance of the spatially separated narrow pears of the reflective index, extinction and reflection coefficients is predicted.

Optical filter finesses enhancement based on nested coupled cavities and active medium

NASA Astrophysics Data System (ADS)

Adib, George A.; Sabry, Yasser M.; Khalil, Diaa

2016-04-01

Optical filters with relatively large FSR and narrow linewidth are simultaneously needed for different applications. The ratio between the FSR and the 3-dB linewidth is given by finesse of the filter, which is solely determined by the different energy loss mechanisms limited by the technology advancement. In this work, we present a novel coupled-cavity configuration embedding an optical filter and a gain medium; allowing an overall finesse enhancement and simultaneous FSR and 3-dB linewidth engineering beyond the technological limits of the filter fabrication method. The configuration consists of two resonators. An active ring resonator comprises an optical gain medium and a passive resonator. In one configuration, the optical filter is the passive resonator itself. In a second configuration, the passive resonator is another ring resonator that embeds the optical filter. The presented configurations using a semiconductor optical amplifier are applied one time to a mechanically Fabry-Perot filter in the first presented configuration; and a second time to a fiber ring filter in the second presented configuration. The mechanical filter has an original 3-dB linewidth of 1nm and an FSR that is larger than 100nm while the enhanced linewidth is about 0.3nm. The fiber ring filter length is 4 m and directional coupler ratios of 90/10corresponding to a 3-dBlinewidth of about 4MHz and an FSR of 47 MHz. The enhanced 3- dBlinewidth of the overall filter configuration is 200kHz, demonstrating finesse enhancement up to20 times the original finesse of the filter.

Optically controlled switch-mode current-source amplifiers for on-coil implementation in high field parallel transmission

PubMed Central

Gudino, Natalia; Duan, Qi; de Zwart, Jacco A; Murphy-Boesch, Joe; Dodd, Stephen J; Merkle, Hellmut; van Gelderen, Peter; Duyn, Jeff H

2015-01-01

Purpose We tested the feasibility of implementing parallel transmission (pTX) for high field MRI using a radiofrequency (RF) amplifier design to be located on or in the immediate vicinity of a RF transmit coil. Method We designed a current-source switch-mode amplifier based on miniaturized, non-magnetic electronics. Optical RF carrier and envelope signals to control the amplifier were derived, through a custom-built interface, from the RF source accessible in the scanner control. Amplifier performance was tested by benchtop measurements as well as with imaging at 7 T (300 MHz) and 11.7 T (500 MHz). The ability to perform pTX was evaluated by measuring inter-channel coupling and phase adjustment in a 2-channel setup. Results The amplifier delivered in excess of 44 W RF power and caused minimal interference with MRI. The interface derived accurate optical control signals with carrier frequencies ranging from 64 to 750 MHz. Decoupling better than 14 dB was obtained between 2 coil loops separated by only 1 cm. Application to MRI was demonstrated by acquiring artifact-free images at 7 T and 11.7 T. Conclusion An optically controlled miniaturized RF amplifier for on-coil implementation at high field is demonstrated that should facilitate implementation of high-density pTX arrays. PMID:26256671

Electronic structure and optical properties of Si, Ge and diamond in the lonsdaleite phase.

PubMed

De, Amrit; Pryor, Craig E

2014-01-29

Crystalline semiconductors may exist in different polytypic phases with significantly different electronic and optical properties. In this paper, we calculate the electronic structure and optical properties of diamond, Si and Ge in the lonsdaleite (hexagonal diamond) phase using a transferable model empirical pseudopotential method with spin–orbit interactions. We calculate their band structures and extract various relevant parameters. Differences between the cubic and hexagonal phases are highlighted by comparing their densities of states. While diamond and Si remain indirect gap semiconductors in the lonsdaleite phase, Ge transforms into a direct gap semiconductor with a much smaller bandgap. We also calculate complex dielectric functions for different optical polarizations and find strong optical anisotropy. We further provide expansion parameters for the dielectric functions in terms of Lorentz oscillators.

Optical temperature indicator using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1995-01-01

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Optical temperature indicator using thermochromic semiconductors

DOEpatents

Kronberg, James W.

1996-01-01

A reversible optical temperature indicator utilizes thermochromic semiconductors which vary in color in response to various temperature levels. The thermochromic material is enclosed in an enamel which provides protection and prevents breakdown at higher temperatures. Cadmium sulfide is the preferred semiconductor material. The indicator may be utilized as a sign or in a striped arrangement to clearly provide a warning to a user. The various color responses provide multiple levels of alarm.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, James W.

1998-01-01

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card.

Optical temperature sensor using thermochromic semiconductors

DOEpatents

Kronberg, J.W.

1998-06-30

An optical temperature measuring device utilizes thermochromic semiconductors which vary in color in response to changes in temperature. The thermochromic material is sealed in a glass matrix which allows the temperature sensor to detect high temperatures without breakdown. Cuprous oxide and cadmium sulfide are among the semiconductor materials which provide the best results. The changes in color may be detected visually using a sensor chip and an accompanying color card. 8 figs.

Nonlinear Optical Interactions in Semiconductors

DTIC Science & Technology

1984-10-01

TACAN Aerospace Corporation. 6 V. Coupling A. C.N.R.S., Physique du Solide et Energie Solaire We have an on-going interaction with Dr. Christian...optical fiber to the semiconductor sample and back to the analyzing electronics. The band-gap energy of the semiconductor decreases with increasing...temperature. Consequently, the absorption of light in the energy region of the band-gap changes with temperature. From the measured light absorption, the

Covert laser remote sensing and vibrometry

NASA Technical Reports Server (NTRS)

Maleki, Lutfollah (Inventor); Yu, Nan (Inventor); Matsko, Andrey B. (Inventor); Savchenkov, Anatoliy (Inventor)

2012-01-01

Designs of single-beam laser vibrometry systems and methods. For example, a method for detecting vibrations of a target based on optical sensing is provided to include operating a laser to produce a laser probe beam at a laser frequency and modulated at a modulation frequency onto a target; collecting light at or near the laser to collect light from the target while the target is being illuminated by the laser probe beam through an optical receiver aperture; using a narrow-band optical filter centered at the laser frequency to filter light collected from the optical receiver aperture to transmit light at the laser frequency while blocking light at other frequencies; using an optical detector to convert filtered light from the narrow-band optical filter to produce a receiver electrical signal; using a lock-in amplifier to detect and amplify the receiver electrical signal at the modulation frequency while rejecting signal components at other frequencies to produce an amplified receiver electrical signal; processing the amplified receiver electrical signal to extract information on vibrations of the target carried by reflected laser probe beam in the collected light; and controlling optical power of the laser probe beam at the target to follow optical power of background illumination at the target.

Power scaling of supercontinuum seeded megahertz-repetition rate optical parametric chirped pulse amplifiers.

PubMed

Riedel, R; Stephanides, A; Prandolini, M J; Gronloh, B; Jungbluth, B; Mans, T; Tavella, F

2014-03-15

Optical parametric chirped-pulse amplifiers with high average power are possible with novel high-power Yb:YAG amplifiers with kW-level output powers. We demonstrate a compact wavelength-tunable sub-30-fs amplifier with 11.4 W average power with 20.7% pump-to-signal conversion efficiency. For parametric amplification, a beta-barium borate crystal is pumped by a 140 W, 1 ps Yb:YAG InnoSlab amplifier at 3.25 MHz repetition rate. The broadband seed is generated via supercontinuum generation in a YAG crystal.

Chinese-English Automation and Computer Technology Dictionary. Volume I.

DTIC Science & Technology

1979-12-01

erjiguan dian- I-i ,f. transistored bridge 22 qiao bandaoti fangdaqi ’p ) semiconductor amplifier 23 bandaoti jiguangqi ’- ., semiconductor laser 24...semidefinite operator 21 banduchu maichong ’t: v half-read pulse 22 banduishu biaodu t L, N hIs semilogarithmic scale 23 banfanshu seminorm (math.) 24...semilinear 16 banxie maichong ’k half-write pulse ; 17 write half- pulse banxieru maichong ’p , half-write pulse 18 banxu kongjJan ’V ;’ J partially ordered

Optical signal-to-noise ratio measurement by optical homodyne tomography.

PubMed

Martelli, P; Pietralunga, S M; Ranzani, L; Siano, R; Martinelli, M

2006-02-01

An all-fiber optical homodyne tomography setup is introduced that measures the optical signal-to-noise ratio through reconstruction of the photon statistics. The scheme described has been conceived for applications to optical communications. In particular, the signal-to-noise ratio has been evaluated at lambda= 1.55 microm as a function of the received power. From the experimental data, in the case of optically amplified signals, the amplifier noise figure can be estimated.

Organo-erbium systems for optical amplification at telecommunications wavelengths.

PubMed

Ye, H Q; Li, Z; Peng, Y; Wang, C C; Li, T Y; Zheng, Y X; Sapelkin, A; Adamopoulos, G; Hernández, I; Wyatt, P B; Gillin, W P

2014-04-01

Modern telecommunications rely on the transmission and manipulation of optical signals. Optical amplification plays a vital part in this technology, as all components in a real telecommunications system produce some loss. The two main issues with present amplifiers, which rely on erbium ions in a glass matrix, are the difficulty in integration onto a single substrate and the need of high pump power densities to produce gain. Here we show a potential organic optical amplifier material that demonstrates population inversion when pumped from above using low-power visible light. This system is integrated into an organic light-emitting diode demonstrating that electrical pumping can be achieved. This opens the possibility of direct electrically driven optical amplifiers and optical circuits. Our results provide an alternative approach to producing low-cost integrated optics that is compatible with existing silicon photonics and a different route to an effective integrated optics technology.

Efficient, diode-laser-pumped, diode-laser-seeded, high-peak-power Nd:YLF regenerative amplifier.

PubMed

Selker, M D; Afzal, R S; Dallas, J L; Yu, A W

1994-04-15

Optical amplification of 11 orders of magnitude in a microlens-collimated, diode-laser-pumped regenerative amplifier has been demonstrated. The amplifier was seeded with 20-ps pulses from an FM mode-locked oscillator and with 0.9-ns pulses from a modulated diode laser. Seed pulses from both sources were amplified to energies exceeding 2.5 mJ. With the thermoelectric coolers and the Pockels cell electronics neglected, the diode-seeded system exhibited an electrical-to-optical efficiency of 2.2%.

Efficient two-stage dual-beam noncollinear optical parametric amplifier

NASA Astrophysics Data System (ADS)

Cheng, Yu-Hsiang; Gao, Frank Y.; Poulin, Peter R.; Nelson, Keith A.

2018-06-01

We have constructed a noncollinear optical parametric amplifier with two signal beams amplified in the same nonlinear crystal. This dual-beam design is more energy-efficient than operating two amplifiers in parallel. The cross-talk between two beams has been characterized and discussed. We have also added a second amplification stage to enhance the output of one of the arms, which is then frequency-doubled for ultraviolet generation. This single device provides two tunable sources for ultrafast spectroscopy in the ultraviolet and visible region.

Emergence of transverse spin in optical modes of semiconductor nanowires

DOE PAGES

Alizadeh, M. H.; Reinhard, Bjorn M.

2016-04-11

The transverse spin angular momentum of light has recently received tremendous attention as it adds a new degree of freedom for controlling light-matter interactions. In this work we demonstrate the generation of transverse spin angular momentum by the weakly-guided mode of semiconductor nanowires. The evanescent field of these modes in combination with the transversality condition rigorously accounts for the occurrence of transverse spin angular momentum. Furthermore, the intriguing and nontrivial spin properties of optical modes in semiconductor nanowires are of high interest for a broad range of new applications including chiral optical trapping, quantum information processing, and nanophotonic circuitry.

Fiber optic signal amplifier using thermoelectric power generation

DOEpatents

Hart, M.M.

1993-01-01

A remote fiber optic signal amplifier for use as a repeater/amplifier, such as in transoceanic communication, powered by a Pu{sub 238} or Sr{sub 90} thermoelectric generator. The amplifier comprises a unit with connections on the receiving and sending sides of the communications system, and an erbium-doped fiber amplifier connecting each sending fiber to each receiving fiber. The thermoelectric generator, preferably a Pu{sub 238} or Sr{sub 90} thermoelectric generator delivers power to the amplifiers through a regulator. The heat exchange surfaces of the thermoelectric generator are made of material resistant to corrosion and biological growth and are directly exposed to the outside, such as the ocean water in transoceanic communications.

Fiber optic signal amplifier using thermoelectric power generation

DOEpatents

Hart, M.M.

1995-04-18

A remote fiber optic signal amplifier for use as a repeater/amplifier, such as in transoceanic communications, powered by a Pu{sub 238} or Sr{sub 90} thermoelectric generator. The amplifier comprises a unit with connections on the receiving and sending sides of the communications system, and an erbium-doped fiber amplifier connecting each sending fiber to each receiving fiber. The thermoelectric generator, preferably a Pu{sub 238} or Sr{sub 90} thermoelectric generator delivers power to the amplifiers through a regulator. The heat exchange surfaces of the thermoelectric generator are made of materials resistant to corrosion and biological growth and are directly exposed to the outside, such as the ocean water in transoceanic communications. 2 figs.

Fiber optic signal amplifier using thermoelectric power generation

DOEpatents

Hart, Mark M.

1995-01-01

A remote fiber optic signal amplifier for use as a repeater/amplifier, such as in transoceanic communications, powered by a Pu.sub.238 or Sr.sub.90 thermoelectric generator. The amplifier comprises a unit with connections on the receiving and sending sides of the communications system, and an erbium-doped fiber amplifier connecting each sending fiber to each receiving fiber. The thermoelectric generator, preferably a Pu.sub.238 or Sr.sub.90 thermoelectric generator delivers power to the amplifiers through a regulator. The heat exchange surfaces of the thermoelectric generator are made of materials resistant to corrosion and biological growth and are directly exposed to the outside, such as the ocean water in transoceanic communications.

Thermo-optic locking of a semiconductor laser to a microcavity resonance.

PubMed

McRae, T G; Lee, Kwan H; McGovern, M; Gwyther, D; Bowen, W P

2009-11-23

We experimentally demonstrate thermo-optic locking of a semiconductor laser to an integrated toroidal optical microcavity. The lock is maintained for time periods exceeding twelve hours, without requiring any electronic control systems. Fast control is achieved by optical feedback induced by scattering centers within the microcavity, with thermal locking due to optical heating maintaining constructive interference between the cavity and the laser. Furthermore, the optical feedback acts to narrow the laser linewidth, with ultra high quality microtoroid resonances offering the potential for ultralow linewidth on-chip lasers.

Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier.

PubMed

Klehr, A; Wenzel, H; Fricke, J; Bugge, F; Erbert, G

2014-10-06

We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction limited optical pulses in the nanoseconds range as required by many applications. The MOPA consists of a distributed Bragg reflector (DBR) laser as master oscillator driven by a constant current and a ridge waveguide power amplifier (PA) which can be driven by a constant current (DC) or by rectangular current pulses with a width of 5 ns at a repetition frequency of 200 kHz. Under pulsed operation the amplifier acts as an optical gate, converting the CW input beam emitted by the DBR laser into a train of short amplified optical pulses. With this experimental MOPA arrangement no relaxation oscillations occur. A continuous wave power of 1 W under DC injection and a pulse power of 4 W under pulsed operation are reached. For both operational modes the optical spectrum of the emission of the amplifier exhibits a peak at a constant wavelength of 973.5 nm with a spectral width < 10 pm.

A 23-dB bismuth-doped optical fiber amplifier for a 1700-nm band

PubMed Central

Firstov, Sergei V.; Alyshev, Sergey V.; Riumkin, Konstantin E.; Khopin, Vladimir F.; Guryanov, Alexey N.; Melkumov, Mikhail A.; Dianov, Evgeny M.

2016-01-01

It is now almost twenty-five years since the first Erbium-Doped Fiber Amplifier (EDFA) was demonstrated. Currently, the EDFA is one of the most important elements widely used in different kinds of fiber-optic communication systems. However, driven by a constantly increasing demand, the network traffic, growing exponentially over decades, will lead to the overload of these systems (“capacity crunch”) because the operation of the EDFA is limited to a spectral region of 1530–1610 nm. It will require a search for new technologies and, in this respect, the development of optical amplifiers for new spectral regions can be a promising approach. Most of fiber-optic amplifiers are created using rare-earth-doped materials. As a result, wide bands in shorter (1150–1530 nm) and longer wavelength (1600–1750 nm) regions with respect to the gain band of Er-doped fibers are still uncovered. Here we report on the development of a novel fiber amplifier operating in a spectral region of 1640–1770 nm pumped by commercially available laser diodes at 1550 nm. This amplifier was realized using bismuth-doped high-germania silicate fibers fabricated by MCVD technique. PMID:27357592

Reflective SOA-based fiber Bragg grating ultrasonic sensing system with two wave mixing interferometric demodulation

NASA Astrophysics Data System (ADS)

Wei, Heming; Krishnaswamy, Sridhar

2017-04-01

Damages such as cracking or impact loading in civil, aerospace, and mechanical structures generate transient ultrasonic waves, which can be used to reveal the structural health condition. Hence, it is necessary to find a practical tool based on ultrasonic detection for structural health monitoring. In this work, we describe an intelligent fiber-optic ultrasonic sensing system, which is designed based on a fiber Bragg grating (FBG) and a reflective semiconductor optical amplifier (RSOA) used as an adaptive source, and demodulated by an adaptive photorefractive two wave mixing (TWM) technique without any active compensation of quasi-static strains and temperature. As the wavelength of the FBG shifts due to the excited ultrasonic waves, the wavelength of the optical output from the fiber cavity laser shifts accordingly. With regard to the shift of the FBG reflective spectrum, the adaptivity of the RSOA-based laser is analyzed theoretically and verified by the TWM demodulator. Additionally, due to the response time of the photorefractive crystal, the TWM demodulator is insensitive to low frequency-FBG spectral shift. The results demonstrate that this proposed FBG ultrasonic sensing system has high sensitivity and can respond the ultrasonic waves into the megahertz frequency range, which shows a potential for acoustic emission detection in practical applications.

Enhanced noise tolerance for 10 Gb/s Bi-directional cross-wavelength reuse colorless WDM-PON by using spectrally shaped OFDM signals

NASA Astrophysics Data System (ADS)

Choudhury, Pallab K.

2018-05-01

Spectrally shaped orthogonal frequency division multiplexing (OFDM) signal for symmetric 10 Gb/s cross-wavelength reuse reflective semiconductor optical amplifier (RSOA) based colorless wavelength division multiplexed passive optical network (WDM-PON) is proposed and further analyzed to support broadband services of next generation high speed optical access networks. The generated OFDM signal has subcarriers in separate frequency ranges for downstream and upstream, such that the re-modulation noise can be effectively minimized in upstream data receiver. Moreover, the cross wavelength reuse approach improves the tolerance against Rayleigh backscattering noise due to the propagation of different wavelengths in the same feeder fiber. The proposed WDM-PON is successfully demonstrated for 25 km fiber with 16-QAM (quadrature amplitude modulation) OFDM signal having bandwidth of 2.5 GHz for 10 Gb/s operation and subcarrier frequencies in 3-5.5 GHz and DC-2.5 GHz for downstream (DS) and upstream (US) transmission respectively. The result shows that the proposed scheme maintains a good bit error rate (BER) performance below the forward error correction (FEC) limit of 3.8 × 10-3 at acceptable receiver sensitivity and provides a high resilience against re-modulation and Rayleigh backscattering noises as well as chromatic dispersion.

Multi-Watt femtosecond optical parametric master oscillator power amplifier at 43 MHz.

PubMed

Mörz, Florian; Steinle, Tobias; Steinmann, Andy; Giessen, Harald

2015-09-07

We present a high repetition rate mid-infrared optical parametric master oscillator power amplifier (MOPA) scheme, which is tunable from 1370 to 4120nm. Up to 4.3W average output power are generated at 1370nm, corresponding to a photon conversion efficiency of 78%. Bandwidths of 6 to 12nm with pulse durations between 250 and 400fs have been measured. Strong conversion saturation over the whole signal range is observed, resulting in excellent power stability. The system consists of a fiber-feedback optical parametric oscillator that seeds an optical parametric power amplifier. Both systems are pumped by the same Yb:KGW femtosecond oscillator.

Charge pump-based MOSFET-only 1.5-bit pipelined ADC stage in digital CMOS technology

NASA Astrophysics Data System (ADS)

Singh, Anil; Agarwal, Alpana

2016-10-01

A simple low-power and low-area metal-oxide-semiconductor field-effect transistor-only fully differential 1.5-bit pipelined analog-to-digital converter stage is proposed and designed in Taiwan Semiconductor Manufacturing Company 0.18 μm-technology using BSIM3v3 parameters with supply voltage of 1.8 V in inexpensive digital complementary metal-oxide semiconductor (CMOS) technology. It is based on charge pump technique to achieve the desired voltage gain of 2, independent of capacitor mismatch and avoiding the need of power hungry operational amplifier-based architecture to reduce the power, Si area and cost. Various capacitances are implemented by metal-oxide semiconductor capacitors, offering compatibility with cheaper digital CMOS process in order to reduce the much required manufacturing cost.

Single flux quantum voltage amplifiers

NASA Astrophysics Data System (ADS)

Golomidov, Vladimir; Kaplunenko, Vsevolod; Khabipov, Marat; Koshelets, Valery; Kaplunenko, Olga

The novel elements of the Rapid Single Flux Quantum (RSFQ) logic family — a Quasi Digital Voltage Parallel and Series Amplifiers (QDVA) have been computer simulated, designed and experimentally investigated. The Parallel QDVA consists of six stages and provides multiplication of the input voltage with factor five. The output resistance of the QDVA is five times larger than the input so this amplifier seems to be a good matching stage between RSFQL and usual semiconductor electronics. The series QDVA provides a gain factor four and involves two doublers connected by transmission line. The proposed parallel QDVA can be integrated on the same chip with a SQUID sensor.

Laser Cooling of 2-6 Semiconductors

DTIC Science & Technology

2016-08-12

practical optical refrigeration . The challenge is the stoichiometric defect in bulk crystal which introduces mid-gap states that manifest as broad-band...cooling in semiconductor has stimulated strong interest in further scaling up towards practical optical refrigeration . The challenge is the...energy. The upconversion process is facilitated by the annihilation of phonons and leads to cooling of the matter. The concept of optical refrigeration

Development of an Airborne Micropulse Water Vapor DIAL

NASA Astrophysics Data System (ADS)

Nehrir, A. R.; Ismail, S.

2012-12-01

Water vapor plays a key role in many atmospheric processes affecting both weather and climate. Airborne measurements of tropospheric water vapor profiles have been a longstanding observational need to not only the active remote sensing community but also to the meteorological, weather forecasting, and climate/radiation science communities. Microscale measurements of tropospheric water vapor are important for enhancing near term meteorological forecasting capabilities while mesoscale and synopticscale measurements can lead to an enhanced understanding of the complex coupled feedback mechanisms between water vapor, temperature, aerosols, and clouds. To realize tropospheric measurements of water vapor profiles over the microscale-synopticscale areas of meteorological interest, a compact and cost effective airborne micropulse differential absorption lidar (DIAL) is being investigated using newly emerging semiconductor based laser technology. Ground based micropulse DIAL (MPD) measurements of tropospheric water vapor and aerosol profiles up to 6 km and 15 km, respectively, have been previously demonstrated using an all semiconductor based laser transmitter. The DIAL transmitter utilizes a master oscillator power amplifier (MOPA) configuration where two semiconductor seed lasers are used to seed a single pass traveling wave tapered semiconductor optical amplifier (TSOA), producing up to 7μJ pulse energies over a 1 μs pulse duration at a 10 kHz pulse repetition frequency (PRF). Intercomparisons between the ground based instrument measurements and radiosonde profiles demonstrating the MPD performance under varying atmospheric conditions will be presented. Work is currently ongoing to expand upon the ground based MPD concept and to develop a compact and cost effective system capable of deployment on a mid-low altitude aircraft such as the NASA Langley B200 King Air. Initial lab experiments show that a two-three fold increase in the laser energy compared to the ground based instrument is achievable via overdriven current pulses to the TSOA gain medium while maintaining a 1μs and 10 kHz pulse width and PRF, respectively. The increase in the laser transmitter pulse energy will allow for nighttime and daytime water vapor profile retrievals from an airborne platform operating at an 8 km altitude with 2-5 minute integration periods. Results from a numerical model demonstrating the performance of an airborne DIAL system with the mentioned transmitter enhancements will be presented and compared against the existing ground based instrument performance. Furthermore, results from laboratory experiments demonstrating the laser transmitter performance including maximum extractable energy, energy stability, and spectral purity will also be presented.

Single layer of MX3(M = Ti, Zr; X = S, Se, Te): a new platform for nano-electronics and optics

NASA Astrophysics Data System (ADS)

Jin, Yingdi; Li, Xingxing; Yang, Jinlong

A serial of two dimensional titanium and zirconium trichalcogenides nanosheets MX3 (M=Ti, Zr; X=S, Se, Te) are investigated based on first-principles calculations. The evaluated low cleavage energy indicates that stable two dimensional monolayers can be exfoliated from their bulk crystals in experiment. Electronic studies reveal very rich electronic properties in these monolayers, including metallic TiTe3 and ZrTe3, direct band gap semiconductor TiS3 and indirect band gap semiconductors TiSe3, ZrS3 and ZrSe3. The band gaps of all the semiconductors are between 0.57~1.90 eV, which implies their potential applications in nano-electronics. And the calculated effective masses demonstrate highly anisotropic conduction properties for all the semiconductors. Optically, TiS3 and TiSe3 monolayers exhibit good light absorption in the visible and near-infrared region respectively, indicating their potential applications in optical devices. In particular, the highly anisotropic optical absorption of TiS3 monolayer suggests it could be used in designing nano optical waveguide polarizers.

MOSFET's for Cryogenic Amplifiers

NASA Technical Reports Server (NTRS)

Dehaye, R.; Ventrice, C. A.

1987-01-01

Study seeks ways to build transistors that function effectively at liquid-helium temperatures. Report discusses physics of metaloxide/semiconductor field-effect transistors (MOSFET's) and performances of these devices at cryogenic temperatures. MOSFET's useful in highly sensitive cryogenic preamplifiers for infrared astronomy.

Evolution of the Novalux extended cavity surface-emitting semiconductor laser (NECSEL)

NASA Astrophysics Data System (ADS)

McInerney, John G.

2016-03-01

Novalux Inc was an enterprise founded by Aram Mooradian in 1998 to commercialise a novel electrically pumped vertical extended cavity semiconductor laser platform, initially aiming to produce pump lasers for optical fiber telecommunication networks. Following successful major investment in 2000, the company developed a range of single- and multi-mode 980 nm pump lasers emitting from 100-500 mW with excellent beam quality and efficiency. This rapid development required solution of several significant problems in chip and external cavity design, substrate and DBR mirror optimization, thermal engineering and mode selection. Output coupling to single mode fiber was exceptional. Following the collapse of the long haul telecom market in late 2001, a major reorientation of effort was undertaken, initially to develop compact 60-100 mW hybrid monolithically integrated pumplets for metro/local amplified networks, then to frequency-doubled blue light emitters for biotech, reprographics and general scientific applications. During 2001-3 I worked at Novalux on a career break from University College Cork, first as R&D Director managing a small group tasked with producing new capabilities and product options based on the NECSEL platform, including high power, pulsed and frequency doubled versions, then in 2002 as Director of New Product Realization managing the full engineering team, leading the transition to frequency doubled products.

The heterogeneous integration of single-walled carbon nanotubes onto complementary metal oxide semiconductor circuitry for sensing applications.

PubMed

Chen, Chia-Ling; Agarwal, Vinay; Sonkusale, Sameer; Dokmeci, Mehmet R

2009-06-03

A simple methodology for integrating single-walled carbon nanotubes (SWNTs) onto complementary metal oxide semiconductor (CMOS) circuitry is presented. The SWNTs were incorporated onto the CMOS chip as the feedback resistor of a two-stage Miller compensated operational amplifier utilizing dielectrophoretic assembly. The measured electrical properties from the integrated SWNTs yield ohmic behavior with a two-terminal resistance of approximately 37.5 kOmega and the measured small signal ac gain (-2) from the inverting amplifier confirmed successful integration of carbon nanotubes onto the CMOS circuitry. Furthermore, the temperature response of the SWNTs integrated onto CMOS circuitry has been measured and had a thermal coefficient of resistance (TCR) of -0.4% degrees C(-1). This methodology, demonstrated for the integration of SWNTs onto CMOS technology, is versatile, high yield and paves the way for the realization of novel miniature carbon-nanotube-based sensor systems.

Noise and linearity optimization methods for a 1.9GHz low noise amplifier.

PubMed

Guo, Wei; Huang, Da-Quan

2003-01-01

Noise and linearity performances are critical characteristics for radio frequency integrated circuits (RFICs), especially for low noise amplifiers (LNAs). In this paper, a detailed analysis of noise and linearity for the cascode architecture, a widely used circuit structure in LNA designs, is presented. The noise and the linearity improvement techniques for cascode structures are also developed and have been proven by computer simulating experiments. Theoretical analysis and simulation results showed that, for cascode structure LNAs, the first metallic oxide semiconductor field effect transistor (MOSFET) dominates the noise performance of the LNA, while the second MOSFET contributes more to the linearity. A conclusion is thus obtained that the first and second MOSFET of the LNA can be designed to optimize the noise performance and the linearity performance separately, without trade-offs. The 1.9GHz Complementary Metal-Oxide-Semiconductor (CMOS) LNA simulation results are also given as an application of the developed theory.

Circular electrode geometry metal-semiconductor-metal photodetectors

NASA Technical Reports Server (NTRS)

Mcaddo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

1994-01-01

The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

Nonlinear Phase Distortion in a Ti:Sapphire Optical Amplifier for Optical Stochastic Cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andorf, Matthew; Lebedev, Valeri; Piot, Philippe

2016-06-01

Optical Stochastic Cooling (OSC) has been considered for future high-luminosity colliders as it offers much faster cooling time in comparison to the micro-wave stochastic cooling. The OSC technique relies on collecting and amplifying a broadband optical signal from a pickup undulator and feeding the amplified signal back to the beam. It creates a corrective kick in a kicker undulator. Owing to its superb gain qualities and broadband amplification features, Titanium:Sapphire medium has been considered as a gain medium for the optical amplifier (OA) needed in the OSC*. A limiting factor for any OA used in OSC is the possibility ofmore » nonlinear phase distortions. In this paper we experimentally measure phase distortions by inserting a single-pass OA into one leg of a Mach-Zehnder interferometer. The measurement results are used to estimate the reduction of the corrective kick a particle would receive due to these phase distortions in the kicker undulator.« less

Temporal-contrast measurements of a white-light-seeded noncollinear optical parametric amplifier

DOE PAGES

Bromage, J.; Dorrer, C.; Zuegel, J. D.

2015-09-01

Ultra-intense optical parametric chirped-pulse systems require front ends with broad bandwidth and high temporal contrast. Temporal cross-correlation measurements of a white-light–seeded noncollinear optical parametric amplifier (NOPA) show that its prepulse contrast exceeds the 120 dB dynamic range of the broadband NOPA-based cross-correlator.

Quantum dash based single section mode locked lasers for photonic integrated circuits.

PubMed

Joshi, Siddharth; Calò, Cosimo; Chimot, Nicolas; Radziunas, Mindaugas; Arkhipov, Rostislav; Barbet, Sophie; Accard, Alain; Ramdane, Abderrahim; Lelarge, Francois

2014-05-05

We present the first demonstration of an InAs/InP Quantum Dash based single-section frequency comb generator designed for use in photonic integrated circuits (PICs). The laser cavity is closed using a specifically designed Bragg reflector without compromising the mode-locking performance of the self pulsating laser. This enables the integration of single-section mode-locked laser in photonic integrated circuits as on-chip frequency comb generators. We also investigate the relations between cavity modes in such a device and demonstrate how the dispersion of the complex mode frequencies induced by the Bragg grating implies a violation of the equi-distance between the adjacent mode frequencies and, therefore, forbids the locking of the modes in a classical Bragg Device. Finally we integrate such a Bragg Mirror based laser with Semiconductor Optical Amplifier (SOA) to demonstrate the monolithic integration of QDash based low phase noise sources in PICs.

Bandwidth efficient bidirectional 5 Gb/s overlapped-SCM WDM PON with electronic equalization and forward-error correction.

PubMed

Buset, Jonathan M; El-Sahn, Ziad A; Plant, David V

2012-06-18

We demonstrate an improved overlapped-subcarrier multiplexed (O-SCM) WDM PON architecture transmitting over a single feeder using cost sensitive intensity modulation/direct detection transceivers, data re-modulation and simple electronics. Incorporating electronic equalization and Reed-Solomon forward-error correction codes helps to overcome the bandwidth limitation of a remotely seeded reflective semiconductor optical amplifier (RSOA)-based ONU transmitter. The O-SCM architecture yields greater spectral efficiency and higher bit rates than many other SCM techniques while maintaining resilience to upstream impairments. We demonstrate full-duplex 5 Gb/s transmission over 20 km and analyze BER performance as a function of transmitted and received power. The architecture provides flexibility to network operators by relaxing common design constraints and enabling full-duplex operation at BER ∼ 10(-10) over a wide range of OLT launch powers from 3.5 to 8 dBm.

Excitons in atomically thin 2D semiconductors and their applications

NASA Astrophysics Data System (ADS)

Xiao, Jun; Zhao, Mervin; Wang, Yuan; Zhang, Xiang

2017-06-01

The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. In this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical means is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.

Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takano, H.; Hosogi, K.; Kato, T.

1995-05-01

A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier withmore » an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs.« less

An automatic step adjustment method for average power analysis technique used in fiber amplifiers

NASA Astrophysics Data System (ADS)

Liu, Xue-Ming

2006-04-01

An automatic step adjustment (ASA) method for average power analysis (APA) technique used in fiber amplifiers is proposed in this paper for the first time. In comparison with the traditional APA technique, the proposed method has suggested two unique merits such as a higher order accuracy and an ASA mechanism, so that it can significantly shorten the computing time and improve the solution accuracy. A test example demonstrates that, by comparing to the APA technique, the proposed method increases the computing speed by more than a hundredfold under the same errors. By computing the model equations of erbium-doped fiber amplifiers, the numerical results show that our method can improve the solution accuracy by over two orders of magnitude at the same amplifying section number. The proposed method has the capacity to rapidly and effectively compute the model equations of fiber Raman amplifiers and semiconductor lasers.

Development of a Single-Pass Amplifier for an Optical Stochastic Cooling Proof-of-Principle Experiment at Fermilab's IOTA Facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andorf, M. B.; Lebedev, V. A.; Piot, P.

2015-06-01

Optical stochastic cooling (OSC) is a method of beam cooling which is expected to provide cooling rates orders of magnitude larger than ordinary stochastic cooling. Light from an undulator (the pickup) is amplified and fed back onto the particle beam via another undulator (the kicker). Fermilab is currently exploring a possible proof-of-principle experiment of the OSC at the integrable-optics test accelerator (IOTA) ring. To implement effective OSC a good correction of phase distortions in the entire band of the optical amplifier is required. In this contribution we present progress in experimental characterization of phase distortions associated to a Titanium Sapphiremore » crystal laser-gain medium (a possible candidate gain medium for the OSC experiment to be performed at IOTA). We also discuss a possible option for a mid-IR amplifier« less

THz semiconductor-based front-end receiver technology for space applications

NASA Technical Reports Server (NTRS)

Mehdi, Imran; Siegel, Peter

2004-01-01

Advances in the design and fabrication of very low capacitance planar Schottky diodes and millimeter-wave power amplifiers, more accurate device and circuit models for commercial 3-D electromagnetic simulators, and the availability of both MEMS and high precision metal machining, have enabled RF engineers to extend traditional waveguide-based sensor and source technologies well into the TI-Iz frequency regime. This short paper will highlight recent progress in realizing THz space-qualified receiver front-ends based on room temperature semiconductor devices.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Simple pulsed semiconductor lasers

NASA Astrophysics Data System (ADS)

Hulicius, E.; Abrahám, A.; Sĭmeček, T.

1988-11-01

A brief review is given of the main characteristics of pulsed GaAlAs/GaAs lasers made in Czechoslovakia. A description is given of laser structures with large optical cavities and their electrical, optical, and service life characteristics are reported.

Optical Design of Plant Canopy Measurement System and Fabrication of Two-Dimensional High-Speed Metal-Semiconductor-Metal Photodetector Arrays

NASA Technical Reports Server (NTRS)

Sarto, Anthony; VanZeghbroeck, Bart; Vanderbilt, Vern C.

1996-01-01

Electrical and optical designs for the prototype plant canopy architecture measurement system, including specified component and parts lists, are presented. Six single Metal-Semiconductor-Metal (MSM) detectors are mounted in high-speed packages.

Effects of entanglement in an ideal optical amplifier

NASA Astrophysics Data System (ADS)

Franson, J. D.; Brewster, R. A.

2018-04-01

In an ideal linear amplifier, the output signal is linearly related to the input signal with an additive noise that is independent of the input. The decoherence of a quantum-mechanical state as a result of optical amplification is usually assumed to be due to the addition of quantum noise. Here we show that entanglement between the input signal and the amplifying medium can produce an exponentially-large amount of decoherence in an ideal optical amplifier even when the gain is arbitrarily close to unity and the added noise is negligible. These effects occur for macroscopic superposition states, where even a small amount of gain can leave a significant amount of which-path information in the environment. Our results show that the usual input/output relation of a linear amplifier does not provide a complete description of the output state when post-selection is used.

A High-Linearity Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems

NASA Astrophysics Data System (ADS)

Yoshida, Takeshi; Sueishi, Katsuya; Iwata, Atsushi; Matsushita, Kojiro; Hirata, Masayuki; Suzuki, Takafumi

2011-04-01

This paper describes a low-noise amplifier with multiple adjustable parameters for neural recording applications. An adjustable pseudo-resistor implemented by cascade metal-oxide-silicon field-effect transistors (MOSFETs) is proposed to achieve low-signal distortion and wide variable bandwidth range. The amplifier has been implemented in 0.18 µm standard complementary metal-oxide-semiconductor (CMOS) process and occupies 0.09 mm2 on chip. The amplifier achieved a selectable voltage gain of 28 and 40 dB, variable bandwidth from 0.04 to 2.6 Hz, total harmonic distortion (THD) of 0.2% with 200 mV output swing, input referred noise of 2.5 µVrms over 0.1-100 Hz and 18.7 µW power consumption at a supply voltage of 1.8 V.

Integrated optical isolators using magnetic surface plasmon (Presentation Recording)

NASA Astrophysics Data System (ADS)

Shimizu, Hiromasa; Kaihara, Terunori; Umetsu, Saori; Hosoda, Masashi

2015-09-01

Optical isolators are one of the essential components to protect semiconductor laser diodes (LDs) from backward reflected light in integrated optics. In order to realize optical isolators, nonreciprocal propagation of light is necessary, which can be realized by magnetic materials. Semiconductor optical isolators have been strongly desired on Si and III/V waveguides. We have developed semiconductor optical isolators based on nonreciprocal loss owing to transverse magneto-optic Kerr effect, where the ferromagnetic metals are deposited on semiconductor optical waveguides1). Use of surface plasmon polariton at the interface of ferromagnetic metal and insulator leads to stronger optical confinement and magneto-optic effect. It is possible to modulate the optical confinement by changing the magnetic field direction, thus optical isolator operation is proposed2, 3). We have investigated surface plasmons at the interfaces between ferrimagnetic garnet/gold film, and applications to waveguide optical isolators. We assumed waveguides composed of Au/Si(38.63nm)/Ce:YIG(1700nm)/Si(220nm)/Si , and calculated the coupling lengths between Au/Si(38.63nm)/Ce:YIG plasmonic waveguide and Ce:YIG/Si(220nm)/Si waveguide for transversely magnetized Ce:YIG with forward and backward directions. The coupling length was calculated to 232.1um for backward propagating light. On the other hand, the coupling was not complete, and the length was calculated to 175.5um. The optical isolation by using the nonreciprocal coupling and propagation loss was calculated to be 43.7dB when the length of plasmonic waveguide is 700um. 1) H. Shimizu et al., J. Lightwave Technol. 24, 38 (2006). 2) V. Zayets et al., Materials, 5, 857-871 (2012). 3) J. Montoya, et al, J. Appl. Phys. 106, 023108, (2009).

Liquid crystal cells with built-in CdSe nanotubes for chromogenic smart emission devices.

PubMed

Lin, Tsung Ju; Chen, Chin-Chang; Cheng, Soofin; Chen, Yang Fang

2008-01-21

A simple and general approach for controlling optical anisotropy of nanostructured semiconductors is reported. Our design involves the fabrication of liquid crystal devices with built-in semiconductor nanotubes. Quite interestingly, it is found that semiconductor nanotubes can be well aligned along the orientation of liquid crystals molecules automatically, resulting in a very large emission anisotropy with the degree of polarization up to 72%. This intriguing result manifests a way to obtain well aligned semiconductor nanotubes and the emission anisotropy can be easily manipulated by an external bias. The ability to well control the emission anisotropy should open up new opportunities for nanostructured semiconductors, including optical filters, polarized light emitting diodes, flat panel displays, and many other chromogenic smart devices.

Electromagnetic Launch Optical Telemetry Feasibility Study

DTIC Science & Technology

2007-10-01

responsivity R(λ) of the ThorLab PDA55-switchable gain, amplified silicon detectors...and collected by a telescope, which amplified both the narrow-band optical signal and the broadband optical noise of the muzzle flash generated by the...used, unfiltered. These detectors have a 3.6 mm × 3.6 mm active area, a 10-MHz bandwidth, a 15-V/mA transimpedance gain, and an optical responsivity of

Investigation of semiconductor clad optical waveguides

NASA Technical Reports Server (NTRS)

Batchman, T. E.; Carson, R. F.

1985-01-01

A variety of techniques have been proposed for fabricating integrated optical devices using semiconductors, lithium niobate, and glasses as waveguides and substrates. The use of glass waveguides and their interaction with thin semiconductor cladding layers was studied. Though the interactions of these multilayer waveguide structures have been analyzed here using glass, they may be applicable to other types of materials as well. The primary reason for using glass is that it provides a simple, inexpensive way to construct waveguides and devices.

NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

NASA Astrophysics Data System (ADS)

Khadzhi, P. I.; Lyakhomskaya, K. D.

1999-10-01

The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

NASA Technical Reports Server (NTRS)

Chen, C.-C.

1989-01-01

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

Distributed feedback acoustic surface wave oscillator

NASA Technical Reports Server (NTRS)

Elachi, C. (Inventor)

1977-01-01

An acoustic surface wave oscillator is constructed from a semiconductor piezoelectric acoustic surface wave amplifier by providing appropriate perturbations at the piezoelectric boundary. The perturbations cause Bragg order reflections that maintain acoustic wave oscillation under certain conditions of gain and feedback.

Efficient dynamic coherence transfer relying on offset locking using optical phase-locked loop

NASA Astrophysics Data System (ADS)

Xie, Weilin; Dong, Yi; Bretenaker, Fabien; Shi, Hongxiao; Zhou, Qian; Xia, Zongyang; Qin, Jie; Zhang, Lin; Lin, Xi; Hu, Weisheng

2018-01-01

We design and experimentally demonstrate a highly efficient coherence transfer based on composite optical phaselocked loop comprising multiple feedback servo loops. The heterodyne offset-locking is achieved by conducting an acousto-optic frequency shifter in combination with the current tuning and the temperature controlling of the semiconductor laser. The adaptation of the composite optical phase-locked loop enables the tight coherence transfer from a frequency comb to a semiconductor laser in a fully dynamic manner.

Optic probe for semiconductor characterization

DOEpatents

Sopori, Bhushan L [Denver, CO; Hambarian, Artak [Yerevan, AM

2008-09-02

Described herein is an optical probe (120) for use in characterizing surface defects in wafers, such as semiconductor wafers. The optical probe (120) detects laser light reflected from the surface (124) of the wafer (106) within various ranges of angles. Characteristics of defects in the surface (124) of the wafer (106) are determined based on the amount of reflected laser light detected in each of the ranges of angles. Additionally, a wafer characterization system (100) is described that includes the described optical probe (120).

Laser spark distribution and ignition system

DOEpatents

Woodruff, Steven [Morgantown, WV; McIntyre, Dustin L [Morgantown, WV

2008-09-02

A laser spark distribution and ignition system that reduces the high power optical requirements for use in a laser ignition and distribution system allowing for the use of optical fibers for delivering the low peak energy pumping pulses to a laser amplifier or laser oscillator. An optical distributor distributes and delivers optical pumping energy from an optical pumping source to multiple combustion chambers incorporating laser oscillators or laser amplifiers for inducing a laser spark within a combustion chamber. The optical distributor preferably includes a single rotating mirror or lens which deflects the optical pumping energy from the axis of rotation and into a plurality of distinct optical fibers each connected to a respective laser media or amplifier coupled to an associated combustion chamber. The laser spark generators preferably produce a high peak power laser spark, from a single low power pulse. The laser spark distribution and ignition system has application in natural gas fueled reciprocating engines, turbine combustors, explosives and laser induced breakdown spectroscopy diagnostic sensors.

Excitons in atomically thin 2D semiconductors and their applications

DOE PAGES

Xiao, Jun; Zhao, Mervin; Wang, Yuan; ...

2017-01-01

The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS 2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. Here in this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical meansmore » is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.« less